4
/s48 /s52/s48 /s56/s48
/s52
/s53
/s45/s49/s48/s48/s48 /s48 /s49/s48/s48/s48
/s45/s52
/s45/s50
/s48
/s50
/s52
/s72
/s69
/s32/s40/s79/s101/s41
/s32/s65/s112/s112/s108/s105/s101/s100/s32/s102/s105/s101/s108/s100/s32/s40/s79/s101/s41
/s77/s111/s109/s101/s110/s116/s32/s40/s49/s48
/s45/s53
/s32/s101/s109/s117/s41
/s48 /s50/s48 /s52/s48
/s48
/s49/s48/s48
/s50/s48/s48
/s51/s48/s48
/s32
/s32
/s100/s32/s40/s110/s109/s41
/s72/s32/s61/s32/s48/s46/s53/s32/s107/s79/s101
/s72/s32/s61/s32/s48
/s32
/s32
/s84/s32/s40/s75/s41
/s32
FIG. 1. (color) Main ﬁgure: Major (red/black) and minor
(green) hysteresis loops along the [110] axis at 5 K, for a
Fe (2 nm)/(Ga,Mn)As (20 nm) ﬁlm, and the hysteresis loop
for a control (Ga,Mn)As (20 nm) ﬁlm along the same axis
(blue). Left inset: Magnetization versus temperature for the
Fe/(Ga,Mn)As ﬁlm at remanence (black) and under a 500 Oe
applied ﬁeld (red). Right inset: Exchange bias ﬁeld versus
thicknessd of the (Ga,Mn)As ﬁlm (points) and ﬁt showing
1/d dependence (dashed line).
M. Sawicki, M. Polini, J. Sinova, A. H. MacDonald, R. P.
Campion, L. X. Zhao, N. R. S. Farley, T. K. Johal, G. van
der Laan, C. T. Foxon, and B. L. Gallagher, Phys. Rev. B
73, 165205 (2006).
16 K. W. Edmonds, A. A. Freeman, N. R. S. Farley, K. Y.
Wang, R. P. Campion, B. L. Gallagher, C. T. Foxon, G.
van der Laan, and E. Arenholz, J. Appl. Phys.102, 023902
(2007).