text: /**
    MEMORY Generated Driver File
  
    @Company
      Microchip Technology Inc.
  
    @File Name
      memory.c
  
    @Summary
      This is the generated driver implementation file for the MEMORY driver using PIC10 / PIC12 / PIC16 / PIC18 MCUs
  
    @Description
      This source file provides implementations of driver APIs for MEMORY.
      Generation Information :
          Product Revision  :  PIC10 / PIC12 / PIC16 / PIC18 MCUs - 1.81.3
          Device            :  PIC16F1829
          Driver Version    :  2.01
      The generated drivers are tested against the following:
          Compiler          :  XC8 2.20 and above
          MPLAB             :  MPLAB X 5.40
  */
  
  /*
      (c) 2018 Microchip Technology Inc. and its subsidiaries. 
      
      Subject to your compliance with these terms, you may use Microchip software and any 
      derivatives exclusively with Microchip products. It is your responsibility to comply with third party 
      license terms applicable to your use of third party software (including open source software) that 
      may accompany Microchip software.
      
      THIS SOFTWARE IS SUPPLIED BY MICROCHIP "AS IS". NO WARRANTIES, WHETHER 
      EXPRESS, IMPLIED OR STATUTORY, APPLY TO THIS SOFTWARE, INCLUDING ANY 
      IMPLIED WARRANTIES OF NON-INFRINGEMENT, MERCHANTABILITY, AND FITNESS 
      FOR A PARTICULAR PURPOSE.
      
      IN NO EVENT WILL MICROCHIP BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, 
      INCIDENTAL OR CONSEQUENTIAL LOSS, DAMAGE, COST OR EXPENSE OF ANY KIND 
      WHATSOEVER RELATED TO THE SOFTWARE, HOWEVER CAUSED, EVEN IF MICROCHIP 
      HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO 
      THE FULLEST EXTENT ALLOWED BY LAW, MICROCHIP'S TOTAL LIABILITY ON ALL 
      CLAIMS IN ANY WAY RELATED TO THIS SOFTWARE WILL NOT EXCEED THE AMOUNT 
      OF FEES, IF ANY, THAT YOU HAVE PAID DIRECTLY TO MICROCHIP FOR THIS 
      SOFTWARE.
  */
  
  /**
    Section: Included Files
  */
  
  #include <xc.h>
  #include "memory.h"
  
  /**
    Section: Flash Module APIs
  */
  
  uint16_t FLASH_ReadWord(uint16_t flashAddr)
  {
      uint8_t GIEBitValue = INTCONbits.GIE;   // Save interrupt enable
  	
      INTCONbits.GIE = 0;     // Disable interrupts
      EEADRL = (flashAddr & 0x00FF);
      EEADRH = ((flashAddr & 0xFF00) >> 8);
  
      EECON1bits.CFGS = 0;    // Deselect Configuration space
      EECON1bits.EEPGD = 1;   // Select Program Memory
      EECON1bits.RD = 1;      // Initiate Read
      NOP();
      NOP();
      INTCONbits.GIE = GIEBitValue;   // Restore interrupt enable
  
      return ((uint16_t)((EEDATH << 8) | EEDATL));
  }
  
  void FLASH_WriteWord(uint16_t flashAddr, uint16_t *ramBuf, uint16_t word)
  {
      uint16_t blockStartAddr = (uint16_t)(flashAddr & ((END_FLASH-1) ^ (ERASE_FLASH_BLOCKSIZE-1)));
      uint8_t offset = (uint8_t)(flashAddr & (ERASE_FLASH_BLOCKSIZE-1));
      uint8_t i;
  
      // Entire row will be erased, read and save the existing data
      for (i=0; i<ERASE_FLASH_BLOCKSIZE; i++)
      {
          ramBuf[i] = FLASH_ReadWord((blockStartAddr+i));
      }
  
      // Write at offset
      ramBuf[offset] = word;
  
      // Writes ramBuf to current block
      FLASH_WriteBlock(blockStartAddr, ramBuf);
  }
  
  int8_t FLASH_WriteBlock(uint16_t writeAddr, uint16_t *flashWordArray)
  {
      uint16_t    blockStartAddr  = (uint16_t )(writeAddr & ((END_FLASH-1) ^ (ERASE_FLASH_BLOCKSIZE-1)));
      uint8_t     GIEBitValue = INTCONbits.GIE;   // Save interrupt enable
      uint8_t     i,j,numberOfWriteBlocks=0,dataCounter=0;
  
      numberOfWriteBlocks = (ERASE_FLASH_BLOCKSIZE/WRITE_FLASH_BLOCKSIZE);
  
      // Flash write must start at the beginning of a row
      if( writeAddr != blockStartAddr )
      {
          return -1;
      }
  
      INTCONbits.GIE = 0;     // Disable interrupts
  
      // Block erase sequence
      FLASH_EraseBlock(writeAddr);
  
      for(j=0; j<numberOfWriteBlocks; j++)
      {
  		// Block write sequence
  		EECON1bits.EEPGD = 1;   // Select Program Memory
  		EECON1bits.CFGS = 0;    // Deselect Configuration space
  		EECON1bits.WREN = 1;    // Enable writes
  		EECON1bits.LWLO = 1;    // Only load write latches
  		
  		for (i=0; i<WRITE_FLASH_BLOCKSIZE; i++)
  		{
  			// Load lower 8 bits of write address
  			EEADRL = (writeAddr & 0xFF);
  			// Load upper 6 bits of write address
  			EEADRH = ((writeAddr & 0xFF00) >> 8);
  		
  			// Load data in current address
  			EEDATL = flashWordArray[dataCounter];
  			EEDATH = ((flashWordArray[dataCounter] & 0xFF00) >> 8);
  			dataCounter++;
  		
  			if(i == (WRITE_FLASH_BLOCKSIZE-1))
  			{
  				// Start Flash program memory write
  				EECON1bits.LWLO = 0;
  			}
  		
  			EECON2 = 0x55;
  			EECON2 = 0xAA;
  			EECON1bits.WR = 1;
  			NOP();
  			NOP();
  		
  			writeAddr++;
  		}
  	}
  
      EECON1bits.WREN = 0; // Disable writes
      INTCONbits.GIE = GIEBitValue;   // Restore interrupt enable
  
      return 0;
  }
  
  void FLASH_EraseBlock(uint16_t startAddr)
  {
      uint8_t GIEBitValue = INTCONbits.GIE;   // Save interrupt enable
  
      INTCONbits.GIE = 0;     // Disable interrupts
      // Load lower 8 bits of erase address boundary
      EEADRL = (startAddr & 0xFF);
      // Load upper 6 bits of erase address boundary
      EEADRH = ((startAddr & 0xFF00) >> 8);
  
      // Block erase sequence
      EECON1bits.CFGS = 0;    // Deselect Configuration space
      EECON1bits.EEPGD = 1;   // Select Program Memory
      EECON1bits.FREE = 1;    // Specify an erase operation
      EECON1bits.WREN = 1;    // Allows erase cycles
  
      // Start of required sequence to initiate erase
      EECON2 = 0x55;
      EECON2 = 0xAA;
      EECON1bits.WR = 1;      // Set WR bit to begin erase
      NOP();
      NOP();
  
      EECON1bits.WREN = 0;       // Disable writes
      INTCONbits.GIE = GIEBitValue;   // Restore interrupt enable
  }
  
  /**
    Section: Data EEPROM Module APIs
  */
  
  void DATAEE_WriteByte(uint8_t bAdd, uint8_t bData)
  {
      uint8_t GIEBitValue = 0;
  
      EEADRL = (uint8_t)(bAdd & 0x0ff);    // Data Memory Address to write
      EEDATL = bData;             // Data Memory Value to write
      EECON1bits.EEPGD = 0;   // Point to DATA memory
      EECON1bits.CFGS = 0;        // Deselect Configuration space
      EECON1bits.WREN = 1;        // Enable writes
  
      GIEBitValue = INTCONbits.GIE;
      INTCONbits.GIE = 0;     // Disable INTs
      EECON2 = 0x55;
      EECON2 = 0xAA;
      EECON1bits.WR = 1;      // Set WR bit to begin write
      // Wait for write to complete
      while (EECON1bits.WR)
      {
      }
  
      EECON1bits.WREN = 0;    // Disable writes
      INTCONbits.GIE = GIEBitValue;
  }
  
  uint8_t DATAEE_ReadByte(uint8_t bAdd)
  {
      EEADRL = (uint8_t)(bAdd & 0x0ff);    // Data Memory Address to read
      EECON1bits.CFGS = 0;    // Deselect Configuration space
      EECON1bits.EEPGD = 0;   // Point to DATA memory
      EECON1bits.RD = 1;      // EE Read
      NOP();  // NOPs may be required for latency at high frequencies
      NOP();
  
      return (EEDATL);
  }
  /**
   End of File
  */