hotoluminescence intensity map of a 3 × 3 cm2 solar cell without (left) or with (right) GO:Nafion film. Image: Hebei University, Advanced Materials Interfaces, Creative Commons License CC BY 4.0
A Chinese-German research group developed the cell with an ink of graphene oxide (GO) mixed with Nafion that can be spin-coated on an n-type silicon wafer to form a high-quality passivating contact scheme. The GO:Nafion layer simultaneously creates a p–n junction with silicon and passivates the surface defects at the GO:silicon interface.
From pv magazine
An international research group has unveiled a heterojunction solar cell based on graphene-oxide (GO) and silicon with a large area of 5.5 cm2.
GO is a compound of carbon, oxygen and hydrogen that is obtained by treating graphite with oxidizers and acids. It consists of a single-layer sheet of graphite oxide that is commonly used to produce graphene-family nanomaterials for various applications, including electronics, optics, chemistry and energy storage.
The scientists developed an ink of GO mixed with Nafion that can be spin-coated on an n-type silicon wafer to form a high-quality passivating contact scheme. “Low interface recombination is provided by the Nafion and carrier selection by the GO,” they explained, noting that the passivation scheme also includes an electron-selective passivation contact comprising n-doped hydrogenated amorphous silicon with an indium tin oxide (ITO) overlayer aimed at improving light trapping and reducing surface recombination.
“Graphene was also shear force mixed in Nafion at a concentration of 8 mg mL–1,” they further explained. “Either of these inks were then spin-coated onto the back of the Si wafer, a thin film of Ag was evaporated on top of this and finally an electrical Ag paste was applied for encapsulation and to block the ingress of small quantities of water. Atomic force microscopy (AFM) revealed that the GO:Nafion layers completely covered the Si surface and a root mean roughness of 89 nm was recorded.”
According to the researchers, the GO:Nafion layer simultaneously creates a p–n junction with silicon and passivates the surface defects at the GO:Si interface. The graphene-silicon solar cell is reportedly able to achieve a power conversion efficiency of 18.8%. “Pseudo J–V curve shows a pseudo fill factor of 80.6% without the serious resistance effect, and potentially predicts that an efficiency of 21.59% could be achieved with further optimization.”
They presented the solar cell in the paper “High-Efficiency Graphene-Oxide/Silicon Solar Cells with an Organic-Passivated Interface,” published in Advanced Materials Interfaces. The research team comprises academics from the Karlsruhe Institute of Technology (KIT) in Germany, the Hebei University in China, and Chinese module manufacturer Yingli Green Energy Holding Co., Ltd. “The scalable fabrication and good wettability of the GO:Nafion ink provides a favorable direction toward development of carbon-based PV in the future,” they concluded.
Author: EMILIANO BELLINI
Hotoluminescence intensity map ya 3 × 3 cm2 solar cell bila (kushoto) au na (kulia) GO:Nafion filamu. "Kampuni ya ""Crypto-Crypto"" ya China na Ujerumani, ambayo ni kampuni ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia ya teknolojia." GO: Nafion safu wakati huo huo inajenga p<unk>n junction na silicon na passivates kasoro uso katika GO: silicon interface. Kwa mfano, katika utafiti wa hivi karibuni, kikundi cha watafiti wa kimataifa kimetengeneza seli ya jua ya heterogluent, ambayo inategemea graphene oxide (GO) na silicon, na ina eneo kubwa la 5.5 cm2. Gesi ya carbon, oksijeni na hidrojeni hutengenezwa kwa kuchanganya graphite na oxidizers. Ni mchanganyiko wa tabaka moja ya graphite oxide ambayo hutumiwa kwa kawaida kutengeneza nanomaterials za familia ya graphene kwa matumizi mbalimbali, ikiwa ni pamoja na umeme, optics, kemia na kuhifadhi nishati. Kwa mfano, kuna mbinu ya kuchanganya na nafon, ambayo inaweza kuunganishwa na wafer ya silicon ya aina ya n, na kuunda mfumo wa mawasiliano ya hali ya juu. "Uunganisho wa kiunganishi cha chini hutolewa na Nafion na uteuzi wa mtoaji na GO, ""walieleza, wakibainisha kwamba mpango wa passivation pia unajumuisha mawasiliano ya passivation ya elektroniki inayojumuisha silicon ya amorphous ya hydrogenated n-doped na tabaka la juu la indium tin oxide (ITO) linalolenga kuboresha kutekwa kwa mwanga na kupunguza muunganiko wa uso." "Graphene pia ilikuwa nguvu ya shear iliyochanganywa katika Nafion kwa mkusanyiko wa 8 mg mL ""1," walielezea zaidi. Kisha, rangi hizo mbili zilipigwa kwenye sehemu ya nyuma ya kifuniko cha Si, filamu nyembamba ya Ag ilichemshwa juu ya hii na hatimaye mchanganyiko wa umeme wa Ag ulitumika kwa ajili ya kufunika na kuzuia kuingia kwa kiasi kidogo cha maji. Kwa mfano, katika uchunguzi wa AFM, nyuzi za GON-Nafion zilifunika uso wa silicon na kugundua ukali wa msingi wa 89 nm, na nyuzi za GON-Nafion ziliunda muunganisho wa p-n na silicon na kuondoa kasoro za uso kwenye kiunganishi cha GON-Nafion. Kwa mfano, kwa mfano, graphene-silicon solar cell inaweza kuwa na ufanisi wa kubadilisha nguvu ya 18.8%. Pseudo-JV curve inaonyesha pseudo-kujaza sababu ya 80.6% bila athari kubwa ya upinzani, na uwezekano wa kutabiri kwamba ufanisi wa 21.59% inaweza kupatikana na optimization zaidi. "Timu ya utafiti inajumuisha wasomi kutoka Taasisi ya Teknolojia ya Karlsruhe (KIT) nchini Ujerumani, Chuo Kikuu cha Hebei nchini China, na mtengenezaji wa moduli ya Kichina Yingli Green Energy Holding Co., Ltd. ""Utaratibu wa kutengeneza na kuweza kunyunyizia vizuri wa wino wa GO: NaFion hutoa mwelekeo mzuri kuelekea maendeleo ya PV ya kaboni katika siku zijazo.""" Mwandishi: Emiliano Bellini