Research continues in the field of perovskite technology, particularly in tandem applications. While the efficiency achieved in the latest published work in the field has only achieved 13.8% efficiency, MIT-Stanford researchers say that the voltage of 1.65 V was at the top of the range the team had set as a target.
Key to the achievement, report the solar researchers, is the effective tunnel junction achieved in the perovskite-cSi cell. The team used degenerately doped p-type and n-type silicon for the tunnel junction. A titanium-dioxide layer is also used to allow electrons to pass from the perovskite and into the tunnel junction layer before then transferring to the c-Si.
The MIT-Stanford team also used a series connection, helping to achieve the 1.65 V result.
The results were published in the Applied Physics Letters journal.
Jonathan P. Mailoa, a graduate student in MIT's Photovoltaic Research Laboratory was a co-author on the paper and he acknowledges that efficiency gains will have to be made for perovskite technology to reach its potential. One way to do this is by increasing the quality of c-Si cell.
"Parasitic optical losses in other layers of the multi-junction solar cell devices and predicting their efficiency potentials through simulation will determine whether or not this approach is truly cost effective," Mailoa told Phys.org. The researchers are continuing to work on a solution for an interlayer between PV layers.
"Fortunately, the physical concepts already exist for other types of multi-junction solar cells, so we simply need to find the best interlayer material combination for the perovskite-silicon pair," Mailoa said.
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Utafiti unaendelea katika uwanja wa teknolojia ya perovskite, hasa katika maombi ya tandem. Ufanisi uliopatikana katika kazi ya hivi karibuni iliyochapishwa katika uwanja huo umefikia ufanisi wa 13.8%, watafiti wa MIT-Stanford wanasema kwamba voltage ya 1.65V ilikuwa juu ya safu ambayo timu ilikuwa imeweka kama lengo. Kifungu cha mafanikio hayo, watafiti wa jua wanaripoti, ni muunganiko mzuri wa handaki uliopatikana katika chembe ya perovskite-cSi. Timu hiyo ilitumia silicon ya aina ya p na ya aina ya n iliyopunguzwa kwa njia ya kuunganisha handaki. Titanium-dioksidi safu pia hutumiwa kuruhusu elektroni kupita kutoka perovskite na katika safu ya makutano ya handaki kabla ya kisha kuhamisha kwa c-Si. Timu ya MIT-Stanford pia ilitumia uhusiano wa mfululizo, kusaidia kufikia matokeo ya 1.65 V. Matokeo hayo yalichapishwa katika jarida la Applied Physics Letters. Jonathan P. Mailoa, mwanafunzi wa kuhitimu katika Maabara ya Utafiti wa Photovoltaic ya MIT, alikuwa mwandishi mwenza wa karatasi hiyo na anakubali kwamba faida za ufanisi zitapaswa kufanywa kwa teknolojia ya perovskite kufikia uwezo wake. Njia moja ya kufanya hivyo ni kwa kuongeza ubora wa seli ya c-Si. "Uharibifu wa macho katika tabaka nyingine za vifaa vya seli za jua na kutabiri uwezo wao wa ufanisi kupitia simulation itaamua kama mbinu hii ni kweli gharama nafuu au la, ""Mailoa aliambia Phys.org." Watafiti wanaendelea kufanya kazi juu ya suluhisho kwa ajili ya interlayer kati ya tabaka PV. "Kwa bahati nzuri, dhana za fizikia tayari zipo kwa aina nyingine za seli za jua za multi-junction, kwa hivyo tunahitaji tu kupata mchanganyiko bora wa nyenzo za interlayer kwa jozi ya perovskite-silicon, ""Mailoa alisema." Yaliyomo ni kulindwa na haki za uchapaji na haiwezi kutumika tena. Ikiwa unataka kushirikiana nasi na ungependa kutumia tena baadhi ya maudhui yetu, tafadhali wasiliana: firstname.lastname@example.org.