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Method of forming integrated stacked capacitors with rounded corners
Method of forming integrated stacked capacitors with rounded corners
Patent Drawings:
(5 images)
Fazan, et al.
Date Issued:
November 16, 1999
November 19, 1997
Fazan; Pierre C.
(Boise, ID)
Figura; Thomas A.
(Boise, ID)
Schuegraf; Klaus F.
(Boise, ID)
Micron Technology, Inc.
(Boise, ID)
Primary Examiner:
Bowers; Charles
Assistant Examiner:
Sulsky; Martin
Attorney Or Agent:
Knobbe, Martens, Olson & Bear LLP
U.S. Class:
Field Of Search:
International Class:
U.S Patent Documents:
Foreign Patent Documents:
Other References:
Watanabe, et al., "Advanced Technique for Fabricating Hemispherical Grained (HSG) Silicon Storage Electrodes," p. 295, IEEE Transactions onElectron Devices, vol. 42, No. 2, Feb. 1995..
Watanabe, et al., "Hemispherical Grained Si Formation Si Formation on in situ Phosphorus Doped Amorphous-Si Electrode for 256Mb DRAM's Capacitor," p. 1247, IEEE Transactions on Electron Devices, vol. 42, No. 7, Jul. 1995..
Disclosed is an improved stacked capacitor with rounded corners for increasing capacitor breakdown voltage, and a method of constructing the same. The preferred method comprises rounding corners of a container-shaped bottom electrode. In particular, sharp corners of a pre-fabricated conductive silicon container are exposed to an ammonium hydroxide/peroxide mixture. The slow etching effect of the clean rounds angled surfaces thereby minimizing the high field effects usually associated with corners and other angled surfaces. Reducing such field effects by reducing or eliminating sharp corners helps prevent breakdown of the capacitor structure dielectric. When the conductive container includes a rough layer, such as hemispherical grained silicon, the invention provides the additional advantage of separating individual hemispherical grains, thus allowing later deposition of a uniformly thick dielectric layer.
We claim:
1. A process for fabricating a bottom electrode with rounded corners for an integrated memory cell capacitor, the process comprising the steps of:
forming a bottom electrode structure within an integrated circuit, the bottom electrode comprising sharp electrode corners; and
rounding the sharp electrode corners by exposing the sharp electrode corners to an isotropic etchant comprising a mixture of ammonium hydroxide and hydrogen peroxide.
2. The process of claim 1, wherein the isotropic etchant comprises a ratio of ammonium hydroxide to peroxide to water in the range of about 10:1:1 to about 1:1:1.
3. The process of claim 1, wherein the electrode corners are exposed to the etchant for between about 5 minutes and 30 minutes.
4. The process of claim 3, wherein the electrode corners are exposed to the etchant for between about 10 minutes and 20 minutes.
5. The process of claim 1, wherein forming the bottom electrode comprises forming hemispherical grained silicon prior to rounding the sharp electrode corners.
6. A process for fabricating an integrated container capacitor characterized by a high breakdown voltage, the process comprising the steps of:
forming a via in a structural layer overlying a semiconductor substrate;
forming a rough conductive silicon layer within the via and over the structural layer, the silicon layer forming electrical contact with the substrate;
at least substantially filling the silicon-lined via with a photoresist filler;
performing a chemical mechanical planarization to remove silicon overlying the structural layer and leave an isolated conductive container having sharp corners;
removing the photoresist filler and the structural layer;
exposing said conductive container to an ammonium hydroxide/peroxide mixture after removing the photoresist filler and the structural layer;
forming a dielectric layer of substantially uniform thickness over and directly contacting the conductive container; and
forming a conductive layer over and directly contacting the dielectric layer.
7. A process for fabricating a bottom electrode plate for a capacitor, said process comprising the steps of:
forming said bottom electrode plate;
forming a layer of hemispherical grained (HSG) silicon on a surface of said bottom electrode plate;
isolating said bottom electrode plate from other bottom electrode plates after forming said layer of HSG silicon; and
rounding corners of said bottom electrode plate with an ammonium hydroxide/peroxide mixture.
8. A process for fabricating a bottom electrode with rounded corners for an integrated memory cell capacitor, the process comprising:
forming a bottom electrode structure within an integrated circuit, the bottom electrode comprising sharp corners; and
rounding the sharp corners by exposing the sharp electrode corners to an isotropic etchant,
wherein forming the bottom electrode comprises forming hemispherical grained silicon before rounding the sharp corners.
9. The process as recited in claim 8, wherein the isotropic etchant further separates silicon grains of the hemispherical grained silicon from one another.
10. A process for fabricating a bottom electrode with rounded corners for an integrated memory cell capacitor, the process comprising the steps of:
forming a plurality of bottom electrode structures within an integrated circuit;
isolating the bottom electrode structures from one another by chemical mechanical planarization, the planarization forming sharp corners on the bottom electrode structures; and
rounding the sharp corners by exposing the sharp corners to a mixture of ammonium hydroxide and hydrogen peroxide.
11. The process of claim 10, wherein the bottom electrode comprises hemispherical grained silicon.
The present invention relates to integrated stacked capacitors and more particularly to container capacitor bottom electrodes for use in dynamic random access memories (DRAMs).
Recent advances in the miniaturization of integrated circuits have led to smaller chip areas available for devices. High density dynamic random access memory chips (DRAMs), for example, leave little room for the storage node of a memory cell. Yet, the storage node (capacitor) must be able to store a certain minimum charge, determined by design and operational parameters, to ensure reliable operation of the memory cell.
Operational problems arise when the DRAM capacitor capacitances fall below certain minimum thresholds. Firstly, the alpha-particle component of normal background radiation will generate hole-electron pairs in the silicon substrate plate of acell capacitor. This phenomena will cause the charge within the affected cell capacitor to rapidly dissipate, resulting in a "soft" error. Secondly, as cell capacitance is decreased, the cell refresh time must generally be shortened, thus requiringmore frequent interruptions for refresh overhead. Thus it is important for a DRAM designer to increase, or at least maintain, cell capacitance as cell size shrinks, without resorting to processes that reduce product yield or that markedly increase thenumber of masking and deposition steps in the production process.
Traditionally, capacitors integrated into memory cells have been patterned after the parallel plate capacitor. A dielectric material is deposited between the deposition of two conductive layers, which form the capacitor plates or electrodes. Several techniques have recently been developed to increase the total charge capacity of the cell capacitor without significantly affecting the chip area occupied by the cell. These include the use of new materials characterized by high dielectricconstants, which permits much smaller interelectrode spacing.
Other techniques concentrate on increasing the effective surface area of the electrodes by creating folding structures such as trench or stacked capacitors. Such structures better utilize the available chip area by creating three dimensionalshapes to which the conductive plates and interlayer dielectric conform. For example, U.S. Pat. No. 5,162,248 and U.S. Pat. No. 5,340,765, issued Aug. 23, 1994 to Dennison et al., both assigned to the assignee present invention, disclose relatedprocesses for forming capacitor structures resembling a cylindrical container. A polycrystalline silicon (polysilicon) container is first formed, both the inside and outside surfaces of which are available for use as the bottom electrode. More complexstructures, such as the container-within-container structure disclosed in U.S. Pat. No. 5,340,763, issued Aug. 23, 1994 to Dennison, may further increase electrode surface area and allow the extension of conventional fabrication materials to futuregeneration memory devices. The capacitor dielectric and top electrode may then be successively deposited.
The effective surface area of the plates may be even further increased by roughening the surface of the polysilicon layer. For example, rough layers may be formed by preferentially etching at grain boundaries of deposited polysilicon. Alternatively, hemispherical grained (HSG) silicon may be formed by gas phase nucleation or surface seeding. Among other processes, surface seeding may be accomplished by annealing a layer of amorphous silicon at a critical temperature and pressure,inducing surface migration of silicon atoms. Relatively large, hemispherical grains form by this redistribution, and the resultant HSG silicon layer provides a much larger electrode surface area than planar polysilicon.
Despite the greater electrode surface area provided by folding structures and roughened electrode surfaces, and partially because of these techniques, there remain limitations on capacitance of memory cells. The limited space over the accessdevices of dense circuits confines three dimensional folding stacked capacitors to a small volume. The capacitor dielectric must therefore be extremely thin to leave room for the top electrode. Furthermore, HSG silicon may grow upwards of 600 .ANG.,occupying a great deal of the cell volume and further limiting the thickness of the capacitor dielectric. While dielectric thickness should be minimized in order to maximize capacitance, too thin a capacitor dielectric risks leakage current across thecapacitor electrodes. Leakage current may result from pinholes in the dielectric and quantum tunneling effects, both of which phenomena are more likely to occur with thinner dielectrics. Thin capacitor dielectric layers are thus characterized by a lowbreakdown voltage, limiting the charge which may be stored on the bottom electrode before breakdown leakage occurs.
In addition, grains of HSG silicon may be so close together that dielectric bridging occurs between grains, creating thicker dielectric between grains than over grain surfaces. If the dielectric is deposited to the minimal thickness between HSGsilicon grains, the dielectric over the grains will be too thin and lead to breakdown. Alternatively, when the dielectric is deposited to the minimal thickness over HSG silicon grains, the dielectric between the grains is too thick, leading to reducedcapacitance.
The problems with thin dielectrics are exacerbated at corners of the cell electrodes. Standard manufacturing techniques, including planarization steps in the creation of stacked capacitors, result in a stacked capacitor structure with sharplyangled edges. Higher charge densities naturally accumulate around angled corners, creating high electric field, or "edge effects." These high field effects further lower the breakdown voltage of the relatively thin dielectric layer, consequentlyreducing capacitance of the memory cell.
A need therefore exists for increasing the capacitance and reliability of an integrated memory cell capacitor. Preferably, such a capacitor and the process for its fabrication should be compatible with current integrated circuit fabricationtechniques and structures in order to minimize the costs of implementation.
The invention is directed to minimizing angled surfaces in stacked capacitors and related structures, thereby increasing the breakdown voltage of the capacitor. Accordingly, a method is disclosed for fabricating a bottom electrode with roundedcorners for an integrated memory cell capacitor. The method comprises formation of a bottom electrode structure for an integrated circuit, such that sharp bottom electrode corners result. A rounding step thereafter accomplishes the objectives of thepresent invention.
In accordance with a preferred embodiment, the bottom electrode comprises a conductive container having sharp corners. For example, the sharp corners may result from a planarization step, comprising either chemical mechanical planarization (CMP)or dry etch. The disclosed container comprises silicon so that the rounding step of the preferred embodiments comprises exposing the sharp corners to an isotropic silicon etch. Specifically, an Ammonium hydroxide (NH.sub.4 OH) and Peroxide (H.sub.2O.sub.2) Mixture (APM) is used to round the corners of the preferred silicon container. Although the entire container may be exposed to the APM, corners (such as those at the lip of a container bottom electrode) have more surface area per unit volumeexposed to APM then planar areas. Thus, the APM exposure results in a rounding of those corners.
Additionally, the disclosed process may be implemented in conjunction with a hemispherical grained (HSG) silicon layer which forms part of the bottom electrode. If formed over or within the bottom electrode prior to the rounding step, individualgrains of the HSG silicon will be slightly separated, allowing later deposition of a uniformly thick capacitor dielectric. Capacitance of the memory cell is thereby increased relative to unetched HSG silicon on a bottom electrode.
FIG. 1 is a cross-sectional view of a partially fabricated integrated circuit memory cell. The cell is shown after formation of a conductive layer over a structural layer and into a via within the structural layer, in accordance with preferredembodiments of the present invention.
FIG. 2 illustrates the memory cell of FIG. 1, following a planarization step which defines a capacitor container.
FIG. 3 is a cross-sectional view of the memory cell of FIG. 2, after removal of the structural layer.
FIGS. 4A and 5A are schematic representations of the capacitor container before and after a rounding step, in accordance with a first preferred embodiment of the present invention, wherein the container has been previously planarized by chemicalmechanical planarization.
FIGS. 4B and 5B are schematic representations of the capacitor container before and after a rounding step, in accordance with a second preferred embodiment of the present invention, wherein the container has been previously planarized by a dryetch process.
FIG. 6 is a cross sectional view of the memory cell following formation of the capacitor dielectric and top electrode layers.
The present invention is directed to increasing capacitance and improving memory cell reliability by rounding the sharp edges at the corners of an integrated capacitor electrode. The process steps described below serve as an example as well as apreferred method of implementing the present invention. Although described in the context of a polysilicon bottom electrode for a container capacitor, the skilled artisan may find application for the present invention for other capacitor configurationsand materials. The invention has particular utility for fabrication processes in which capacitor electrodes are formed with sharp corners, such as by planarization steps.
FIG. 1 illustrates a partially fabricated memory cell within an integrated circuit, representing a starting point for the preferred embodiments of the present invention. A conductive plug 10 between neighboring word lines 12, forms electricalcontact with an active area 14 of a semiconductor substrate 16, such as a silicon wafer. A planarized insulating layer 18, preferably oxide, overlies the word lines 12 and plug 10. A thin etch stop film 20, preferably silicon nitride, is formedsuperjacent the insulating layer 18, and a structural layer 22 overlies the etch stop 20 in turn.
A contact via 24 is then formed within the structural layer 22, thereby exposing the conductive plug 10. Preferably, the via 24 is etched anisotropically through a mask, resulting in a cylindrical via 24 with vertical sidewalls, in accordancewith conventional integrated circuit via formation. (FIG. 1 is a schematic cross-section which does not show the back wall of the via 24. In reality, the container resembles a three-dimensional cylinder.) Preferably, the via 24 has a diameter betweenabout 0.2 micron and 1 micron, more preferably between about 0.3 micron and 0.5 micron, and most preferably about 0.45 micron.
An electrode material 26 is thereafter deposited into the via 24 and over the structural layer 22, forming the structural basis for the capacitor bottom electrode to be further defined in process steps discussed below. The electrode material 26may comprise any of a number of conductive materials, including but not limited to silicon, refractory metal suicides and metals. The preferred embodiments, however, incorporate conductively doped polycrystalline silicon (polysilicon, or simply poly)for the electrode material 26, having an overall thickness between about 100 .ANG. and 1,000 .ANG., more preferably between about 200 .ANG. and 800 .ANG., and most preferably about 600 .ANG.. Fabrication to this point is conventional and may bereplaced by other methods of forming container capacitors. Similar methods, for example, have been described in U.S. Pat. No. 5,340,765, issued to Dennison et al. and assigned to the assignee of the present invention, the disclosure of which is herebyincorporated by reference.
The electrode material 26 of the preferred embodiments also includes a rough conductive layer 28, in the form of hemispherical grained (HSG) silicon. As discussed in the "Background" section above, the HSG silicon 28 serves to increase thesurface area of the bottom electrode to which the capacitor dielectric and top electrode conform. However, it should be understood that many advantages of the present invention do not depend upon the presence of the HSG silicon 28, and alternativeembodiments of the present invention may include bottom electrodes having planar surfaces. On the other hand, the invention has particular utility in the context of HSG silicon-lined capacitor containers, and other embodiments may be conceived ofwherein a rough conductive layer is formed over both the inside and outside surfaces of the bottom electrode.
For the preferred embodiment, the HSG silicon 28 is formed following deposition of the polysilicon layer. Many different processes of roughening or texturizing conductive layers are known in the art. For example, U.S. Pat. No. 5,102,832,issued to Tuttle, U.S. Pat. No. 5,112,773, issued to Tuttle, U.S. Pat. No. 5,320,880, issued to Sandhu et al., U.S. Pat. No. 5,202,278, issued to Mathews et al., all disclose various techniques for forming rough silicon. U.S. Pat. No. 5,182,232,issued to Chhabra et al. discloses a method of texturizing metal silicide. Any of the processes disclosed in the above references may be incorporated into the present invention. Most preferably, however, a layer of amorphous silicon is subjected to avacuum anneal, causing a redistribution of silicon atoms. U.S. Pat. No. 5,407,534, issued to Thakur and assigned to the assignee of the present invention, discloses such a texturizing vacuum anneal. The disclosure of this patent is herebyincorporated by reference.
A layer of amorphous silicon is deposited over the polysilicon to a preferred thickness between about 100 .ANG. and 500 .ANG., most preferably about 300 .ANG.. The structure is preferably conductively doped and then heated to a temperature inthe range of between 450.degree. C. and 650.degree. C., more preferably between about 560.degree. C. and 620.degree. C., most preferably around 600.degree. C., while the chamber pressure is maintained between about 1.times.10.sup.-10 Torr and1.times.10.sup.-3 Torr. An inert gas (e.g., argon), is bled into the anneal chamber. The surface migration of the silicon atoms to the nucleation sites results in the formation of a rough or texturized, granular surface having a much greater surfacearea for charge storage. The resulting electrode material 26, including HSG silicon 28, forms the bottom or storage electrode of a memory cell capacitor.
FIG. 2 illustrates the structure of FIG. 1 after a planarizing step defines a conductive container 30 formed of the conductive electrode material 26 (including the HSG silicon 28). The container will serve as the capacitor bottom electrode forthe memory cell. Preferably, a photoresist filler 31 first fills the via 24, protecting the container 30 from harmful etchants. A planarizing step then removes at least horizontal portions of the electrode material 26 which overlie the structural layer22 (see FIG. 1). Upper portions of the structural layer 22 may also be removed, depending upon the planarization process chosen. As a result of the planarization, a container upper surface or rim 32 is exposed, extending around the circumference of thethree-dimensional container 30. At relatively sharp edges or corners 35, the rim 32 meets with an outside container surface 40 and an inside container surface 42 (comprising HSG silicon for the preferred embodiment). As shall be described below inconnection with FIGS. 4A to 5B, different planarization processes may result in different corner configurations.
In accordance with the first preferred embodiment of the present invention, the planarization comprises a chemical mechanical planarization (CMP) or polishing step. Prior to the CMP step, the conductively lined via 24 (FIG. 1) should be filledto overflowing with a photoresist filler 31. The resist 31 protects the container inner surface 42, while the structural layer 22 protects the outside surface 40. The preferred CMP step comprises a polishing step in the presence of a silica-richslurry. A schematic representation of the rim 32a produced by CMP is illustrated in FIG. 4A.
In accordance with a second preferred embodiment of the present invention, the planarization comprises a dry etch process. The resist filler 31 first fills the conductively lined via 24 (FIG. 1). The resist is then partially recessed within thevia 24, preferably below the horizontal portions of the conductive electrode material 26 (FIG. 1). This step preferably comprises a timed selective resist strip, such as a pirhana bath. Thereafter, exposed horizontal portions of the electrode material26 are anisotropically etched in a reactive ion etch (RIE) chamber. Most preferably, where the electrode material 26 comprises polysilicon, the dry etch planarization comprises SF.sub.6 or NF.sub.3 or HBr. This dry etch should be performed until thestructural layer 22 is exposed and cleaned of the overlying polysilicon. A schematic representation of the rim 32b produced by dry etch planarization is illustrated in FIG. 4B.
FIG. 3 illustrates the memory cell of FIG. 2 after the structural layer 22 and resist filler 31 have been removed. The filler 31 may be removed by a standard resist strip and the exposed structural layer 22 is preferably selectively etched,following the planarization. For example, where the structural layer 22 comprises oxide, it may be removed by a selective wet oxide etch. The etch stop film 20 provides a definite stopping target for the etch. It will be understood, though, that etchstop film 20 is not essential, as time-controlled etch techniques may sufficiently remove the structural layer 22 while maintaining the electrical isolation of the underlying insulating layer 18. For example, a diluted HF solution (between 10:1 and100:1 H.sub.2 O:HF) may etch the BPSG at a controllable rate to the appropriate level, and buffering agents such as NH.sub.4 F may stabilize the reactions to maintain a constant etch rate.
The preferred container structure 30 is cylindrical in shape, with a preferred diameter of about 0.5 micron (5,000 .ANG.). The container walls, comprised of the electrode material 26 (which includes the HSG silicon 28), are approximately 600.ANG. in thickness. The small dimensions of the container 30, especially of the interior volume, limit the thickness of the capacitor dielectric and top electrode layers which are to be deposited within the container 30. As discussed in the"Background" section above, the limited thickness of the dielectric, combined with electric field edge effects at the container corners 35, ordinarily lead to low breakdown threshold and risk of leakage current at the corners 35. The rounding step ofthe present invention alleviates this problem by smoothing the sharp corners 35.
FIGS. 4A and 4B are enlarged, schematic representations of the container 30 of the first and second embodiments, respectively, shown in isolation. For an understanding of the general applicability of the present invention, the HSG silicon 28 ofthe preferred embodiments is left out of these schematic representations. It will be understood, however, that the HSG silicon 28 represents only a microstructure over the container surfaces. The rounding step of the present invention operates on themacrostructure of the container 30, namely the sharp corners 35 at the joint of rim 32 and container surfaces 40 and 42, regardless of the presence or absence of any microstructure. For convenience in discussion of the rounding step in FIGS. 4A-5B,corresponding portions of the structure will be referred to by a common reference numeral, followed by an "a" or a "b" for the first and second embodiments, respectively.
FIG. 4A illustrates the container 30a of the first preferred embodiment, wherein the planarization step comprises a CMP process. As illustrated, the rim 32a is relatively planar, resulting in corners 35a of approximately 90.degree. (that is,the rim 32a is oriented at approximately 90.degree. to container sidewalls 40a and 42a). Although the stored charge may be evenly distributed over surface areas of the container sidewalls 40a and 42a and rim 32a during circuit operation when the DRAMmemory cell is in an "on" state, the spatial charge concentration (charge per unit volume) is greater at the corners 35a. This increased charge density leads to the field edge effects and lower breakdown voltage mentioned above.
Referring now to FIG. 5A, a modified container 50a is shown following a rounding step, in accordance with the present invention. The resultant container lip 52a takes on a rounded appearance, characterized by a center peak and bevelled edges54a. Charge stored at the surfaces of the container 50a, which acts as the capacitor bottom electrode during operation, results in much lower spatial charge densities around the bevelled corners 54a than at unrounded corners 35a (FIG. 4A). While thesidewall surfaces 40a and 42a (FIG. 4A) are also slightly etched, the relative positions of the modified exterior surface 60a and interior surface 62a are not significantly different, such that thickness of the container sidewalls remains relativelyconstant (e.g., only 10-20 .ANG. of 600 .ANG. removed). On the other hand, where one or both of the surfaces have been previously roughened (such as the HSG silicon 28 of the preferred embodiment, depicted in FIG. 1) the roughened surfaces will bemodified as described more fully below.
Similarly, FIG. 4B illustrates the container 30b of the second preferred embodiment, wherein the planarization step comprises a dry etch, as described above. As illustrated, the rim 32b has the shape of a concave trough around the top of thecontainer, resulting in extremely sharp corners 35b of less than 90.degree.0 (that is, the rim surface 32b is less than 90.degree. to container sidewalls 40b and 42b). During circuit operation, spatial charge densities at these acute corners 35b wouldbe even higher than at the 90.degree. corners 33a produced by CMP (see FIG. 4A). For the preferred dimensions and processes, each prong or corner 35b extends approximately 100 .ANG. to 200 .ANG. above the trough of the rim 32b and a base width(measured arbitrarily close to the trough) of about 20 .ANG. to 50 .ANG..
Referring now to FIG. 5B, a modified container 50b is shown following the rounding step, in accordance with the present invention. The resultant container lip 52b has dulled corners 54b, and at least a shallower center trough. Thus, as with thefirst embodiment, the rounding step of the present invention reduces the concentration of electrode surface area per unit volume in the vicinity of bottom electrode corners, thus reducing edge effects in operation. It will be understood that an extendedrounding step may further round the corners 54b until the structure resembles FIG. 5A. Such continued etching, however, may be achieved at the risk of damaging the container's structural integrity.
Although FIGS. 4A-5B show the use of an APM etch to round the corners 35 of a container 30 planarized by either a dry etch or by chemical mechanical planarization, it will be understood that the present invention may be implemented to roundcorners of bottom electrode configurations other than the container 30 of the present invention. Rounding the corners of a semiconductor structure helps to avoid the charge build-up and high field effects associated with angled edges.
The rounding step of the present invention is now described in detail. Henceforth, portions of the container 30 will be referred to by a common reference numeral, since the rounding step has similar effects on corresponding portions of bothpreferred embodiments described above. Preferably, the rounding step comprises an isotropic etch of the bottom electrode after problematic corners 35 have been exposed. For the preferred embodiments, this occurs after the structural layer 22 has beenremoved. Thus, the lip 32, inner sidewalls 42 and outer sidewalls 40, are all exposed to the isotropic etch. Exposure to the etchant results in a rounding of the corners 35. As can be seen in FIGS. 4A or 4B, each corner 35 of the container 30 hassignificantly more area per unit volume exposed to the etch than the flat surfaces 40 and 42 of the container 30. Thus the increased exposure to etchant at the corners results in slightly more electrode material being etched at the corners 35, therebyrounding the edges 35 created by planarization.
The container 30 of the preferred embodiments comprises doped polysilicon. Accordingly, the preferred rounding step comprises exposing the container 30 to an etchant which controllably erodes silicon. The particular etchant used comprises anAmmonium hydroxide (NH.sub.4 OH) and Peroxide (H.sub.2 O.sub.2) Mixture (hereinafter referred to as an "APM"), diluted in water. The ratio of NH.sub.4 OH to H.sub.2 O.sub.2 to H.sub.2 O is preferably within the range of 10:1:1 to 0.5:1:1, morepreferably 7:1:1 to 1:1:1, and most preferably about 5:1:1. Assuming that the most preferred concentration of APM is used, the silicon should be exposed to the APM etchant for a predetermined time period ranging from a few minutes to around an hour. Preferably, exposure to the APM is between about 5 minutes and 30 minutes, more preferably between about 10 minutes and 20 minutes, and most preferably about 15 minutes. Exposing the silicon for the preferred time duration using the preferred APM ratiowill result in the etching away of approximately 10 to 20 .ANG. of silicon.
The invention has been reduced to practice using the preferred parameters set forth above. It has been found that utilizing the APM clean to round container edges results in an increased breakdown voltage for the completed capacitor. Inparticular, capacitor breakdown voltage was increased by at least 0.2 volts when the bottom electrode was fabricated as described above, as compared to bottom electrode fabrication without the rounding step.
For the preferred embodiments, wherein the capacitor bottom electrode includes HSG silicon, the rounding step of the present invention may also increase overall capacitance. The preferred APM etch, used to round the container corners 35, alsoetches the silicon of the container exterior surface 40 and interior surface 42 (see FIG. 3). The interior surface 42 is defined by the HSG silicon layer 28 (see FIG. 1). The APM etch will evenly etch all exposed surfaces, reducing the size of eachhemispherical grain slightly, and thus increasing the separation between grains of the modified interior surface 62. It will be understood that, for embodiments where the exterior surface 40 is also roughened, a similar effect would be produced in themodified exterior surface 60.
As disclosed in the co-pending U.S. Patent Application of Figura, entitled "A Method for Increasing Capacitance of an HSG Rugged Capacitor Using A Post Deposition Wet Etch," Ser. No. 08/209,661, filed Mar. 11, 1994, and in the relatedco-pending U.S. Patent Application of Figura, entitled "A Method For Increasing Capacitance of an HSG Rugged Capacitor Using A Phosphine Rich Oxidation and Subsequent Wet Etch", Ser. No. 08/209,659, filed Mar. 11, 1994, increasing separation of HSGsilicon grains reduces dielectric bridging between grains. Both of these pending applications are assigned to the assignee of the present invention, and are hereby incorporated by reference. A more uniformly thick dielectric layer may thus be depositedover the bottom electrode. This, in turn, results in an increased overall capacitance by allowing deposition of the minimal dielectric thickness adequate to avoid most pinhole and tunneling leakage problems.
The present invention increases capacitor breakdown voltage regardless of whether the container 30 which is exposed to the etchant includes a roughened conductive layer. However, the preferred APM etch entails additional benefits where thebottom electrode includes roughened surfaces, such as the HSG layer 28 on the interior of preferred container 30.
Referring now to FIG. 6, a memory cell capacitor 80 is shown, wherein the modified container 50 comprises the bottom electrode. A thin capacitor cell dielectric 85 is deposited over the modified container 50. The preferred dielectric 85comprises an oxide-nitride complex (ON), though any suitable dielectric material may be used. Note that, as described, the thin dielectric 85 lies conformally superjacent the rough interior surface 62 as modified by the preferred APM etch. Preferably,the dielectric 85 is deposited to a thickness of between about 30 .ANG. and 150 .ANG., most preferably about 70 .ANG.. Such a uniformly thick dielectric layer 85 will demonstrate greater reliability than prior art dielectric layers of comparablethickness over unetched HSG silicon. A top or reference electrode layer 87, preferably comprising doped polysilicon, is thereafter deposited over the cell dielectric 85. From this point, the wafer may be completed using conventional fabrication processsteps.
The invention and its advantages will be understood from the foregoing description and it will be apparent that various changes may be made in the form, construction and arrangements of the parts of the invention without departing from the spiritand scope thereof or sacrificing its material advantages. The arrangements described are merely by way of example. We do not wish to be restricted to the specific forms shown or uses mentioned except as defined in the following claims.
* * * * *
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Secondary contributor: special rules: person works for someone in the UK: before 6 April 2014
Paragraph 9 of Schedule 3 Regulation 5 to the Social Security (Categorisation of Earners) 1978
Where there is a foreign contractual employer who does not meet the conditions as to residence or presence, the legislation treats as the secondary contributor, the person in the UK that the employee works for. This legislation is sometimes referred to as the 'host regulations' because the 'host employer' in the United Kingdom (UK) is treated as the secondary contributor.
The key conditions are
- in pursuance of that employment the personal service of the person employed is made available to a host employer;
- the personal service is made available for the purposes of the business of that host employer.
These conditions are satisfied where the person is employed under a contract of service, under which, the person is obliged to provide a personal service, and then in a broad sense, the person carries out their work for someone in the UK other than their contractual employer.
These regulations do not apply to certain 'host employers' of mariners, see NIM29030.
For the position on or after 6 April 2014, see NIM33730.

subset: commoncrawl


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Students in my Grade 5 and 6 Social Studies classes have been inquiring into Canada's evolution as a multicultural nation, while further developing a greater appreciation for diversity in Canada and around the world.
To achieve this outcome, we have been answering some pretty big questions including:
- What motivates newcomers to move to Canada?
- How do Canadians and the Canadian government respond to international crises and/or internal pressures? How is that reflected in our past and present actions and policies?
- What is the current and historical Canadian response/treatment of immigrants and refugees?
- How do our immigration policies compare to those of other nations around the world?
- How has our daily life been impacted by our diversity, including the contributions of individuals who have immigrated to Canada? Copyright Yvonne Denomy, SPS
Copyright Yvonne Denomy, SPS
Parents/visitors, if you choose to leave a comment on this blog, I invite you to further our learning by reflecting on any or all of the following questions:
How have our projects enabled you (as an individual, parent or family unit) to better understand how you have benefited from Canada's diversity?
What are some common themes or character traits among those who make positive contributions to Canadian life?
How did the use of this technology (Voki) help us achieve our outcomes and share our learning?
I hope you enjoy this example and viewing more of our products at the website below:
- Grade 5/6 (O'Leary) *Please note that although all student research was conducted in the French language, the students were given the choice to present their Voki in English or French (knowing our audience is mostly English speaking).
- Grade 5/6 (Miss G)


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In the wake of President Bush's second veto of federal funding for embryonic stem cell research, Jewish groups are struggling for a new strategy to advance the issue.
"We have to regroup and rethink the strategy; we've done everything we can do," said June Walker, the president of Hadassah, which led lobbying for the funding. "I don t know where we go from here."
Enough Republicans support federal funding that Congress passed a stem-cell bill last year, when the GOP was in the majority, prompting Bush to issue his first veto in six years as president. And, after Democrats seized control of Congress last year, House Speaker Nancy Pelosi (D-Calif.) made passage of the stem-cell bill a signature issue for her party. The result: Last week, the U.S. House of Representatives passed a bill to fund stem-cell research by a comfortable 247-176 margin — but still short of the two-thirds majority needed to override a presidential veto.
"Once again, the Congress has sent me legislation that would compel American taxpayers, for the first time in our history, to support the deliberate destruction of human embryos," Bush said on June 16, upon vetoing the stem-cell bill. "I will not allow our nation to cross this moral line."
Christian conservatives back Bush in his decision, but polls show majorities of Americans back embryonic stem cell research in battling degenerative diseases. The bill would have used embryonic stem cells that were in any case headed for discard piles.
Once again, the president has ignored the will of the American people, of leading medical researchers, and of a bipartisan majority of the Congress," Pelosi said in a statement after the veto. "His cruel veto says 'no' to the hopes of million of families across America."
Several Jewish groups across the religious and political spectrum criticized Bush's veto, including Hadassah, the National Council of Jewish Women, the Orthodox Union and the Reform movement's! Religio us Action Center.
At the same time, Hadassah, the Reform movement and the OU all offered some praise for the president's decision to order the National Institutes of Health to report within 90 days on the potential of stem cells derived from skin cells and amniotic fluid, among other sources. The National Council of Jewish Women dismissed Bush's action as a "fig leaf."
Although she praised Bush's interest in alternative research approaches, Hadassah's Walker also noted that research into the possible uses of embryonic stem cells is much more advanced and promising. Without federal funding, she said, the expensive lab equipment remains largely unavailable to American researchers, precipitating a brain drain in the field.
"The cost of basic research is a very, very expensive proposition," Walker said. "The only pockets deep enough to make it happen is the federal government. Many of the young researchers are leaving the country for Canada, South Korea and Singapore."
Walker said one strategy now would be to encourage states to follow California's lead and launch state-funded stem cell research. That could create a groundswell, she suggested, in time for the next Congress — when Bush will be out of office and no longer be able to block the funding with a veto.
"As individual states begin to develop stem cell industries, more will get onto the bandwagon," she said.
The Archive of the Jewish Telegraphic Agency includes articles published from 1923 to 2008. Archive stories reflect the journalistic standards and practices of the time they were published.


text: I am the current, happy owner of an Aluminum Powerbook G4. She is a beautiful 15" running at 1.25 Ghz, one stick of RAM at 512 MB, 80 GB hard drive, Superdrive, Bluetooth, AP Extreme, et al. It truly is a great computer. But the sad thing is that it has left my desk here at school a grand total of 6 times, three of which was bringing it home for extended stays. I feel like I am not doing justice to it and its capabilities. Now, I present the question at hand. Do I sell my powerbook, and take the cash and put it towards a G5, or do I keep the 'book? Both will inevitably sit on my desk for LONG periods of time. I don't do heavy applications often, but I have them and I tend to run them simultaneously when they are up. But I am looking to have a computer that I can keep for the long haul. I am just afraid that the G4 will not be able to keep up for 3+ years, while I can upgrade the G5 with cheap upgrades and the next-gen G5 processors will be able to handle the coming software. If anyone would care to help me out as I struggle with this, please let me know. I am welcome to either impartial or biased advice. Just hit me with it. And if anyone wants to make me a deal, I can be convinced... By the way, this is my first post EVER. I have been watching Macrumors for a year before I bought this powerbook one year ago, and it has been my homepage ever since. And I just now joined.... MiLife


text:
'Big things happen when you do small things right'
Frequent Air Travellers would confirm the veracity of this statement and how precise it seems especially on a foreign trip. Preparation is the key, while embarking on an overseas vacation. Carry money wisely and that too as a mix of cash, credit cards and travellers cheques. There's nothing more frustrating than being stranded in a foreign country with all your money gone. Keep a scanned copy of your vital travel documents like passport, visa, driving license, return ticket and store them online in a password protected folder. Even if your luggage gets misplaced and your vital documents get lost you can always retrieve them to avoid any problems at immigration counters.
Don't fail to carry copies of your identity
documents and details of your insurance policies. Carry a SIM card with a
global roaming facility activated before hand. Often travellers get stranded as
soon as they come out of the airport only to find that their phone is not
working in the destination country. Memorize the toll free phone number of your
debit card /ATM card issuer so that you can file a complaint imm
Avoid travelling to high-risk countries that are ridden by strife and violence. Obtain exhaustive and up to date information about the destination you intend to travel to. If there are reports of protest, labour unrest, and civil disturbance: STAY AWAY; you never know when these things turn violent and ugly. Have a first-aid kit handy with all necessary supplies like antiseptic ointments, germicidals, band aids, antihistamines, analgesics and anti-diarrheal medication. In the event of a sudden injury or assault go to the nearest clinic to get immediate first aid. You always have the option to shift to a hospital patronized by your insurer, once your condition gets stable.
Having phone numbers of emergency services like ambulance, police is indispensable. In case you are the victim of a crime like theft, pick-pocketing, chain snatching report it immediately to the police. The police report would be mandatory if you desire to claim reimbursement from your insurer. If the prospect of going to a police station seems intimidating, try and contact your embassy or consulate and ask them for assistance. They will not only help you in registering a police complaint but will also notify your family about the mishap.
If you have managed to procure cheap flights to your destination then taking care of the above pointers would ensure a safe, secure and comfortable journey.


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Emmy season is upon us, which means that TV Academy members are getting "For Your Consideration" mail. The mail consists of DVDs that networks send to those voting so that they can decide which shows should win (this sounds like an awesome job, how do I join the TV Academy??)
Today, Netflix sent its original content for Emmy consideration. While that may not sound too exciting, they did it in a brilliant way.
In an awesome marketing move, Netflix had Tituss Burgess, star of Unbreakable Kimmy Schmidt, open the For Your Consideration mail.
In the package is more than just DVDs. There's paraphernalia from each of the shows up for Emmy consideration - an orange jumpsuit for OITNB, a horse head for the animated comedy BoJack Horseman and of course some Pinot Noir for Kimmy Schmidt.
Anyone missing Titus Andromedon after the end of Kimmy Schmidt season one will love this video. He's dramatic, ridiculous and even sings a little bit.
As if we didn't love Netflix's original content enough already.
If I were part of the TV Academy (which I should be), this would definitely persuade me to vote for Netflix content.


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Be familiar with training which enhances your stress coping skills. So that you can choose according to your specific needs.
1. Psycho educational programme
Objectives – to know more about stress
To learn more about what is stress, source, sign and symptoms of stress, impact of stress on health, performance and well-being.
Training involves usually lecture, may include psychometric measures and relaxation.
2. Stress inoculation training (SIT)
Objectives – build resilience and tolerance
SIT focuses multiple coping responses to resolve current problems as well as to 'inoculate' the person or group against future stress. Since maladaptive coping is often related to lack of preparation and surprise. SIT exposes individuals to milder stressors as a way to enhance their ability to cope with more severe life situations.
Training involves theoretical explanation, active (variety of) skill acquisition, application in real life and follow-up.
3. Cognitive behavioural training (CBT)
Objectives – minimize faulty, distorted thinking, attitude and behaviour
There is a reciprocal relationship between thinking (cognition), feeling (affective) and action (behaviour). CBT emphasizes the importance of changing our thinking, feeling and behaviour as a way to reducing symptoms and improving functioning and our well being.
Training involves identifying and modifying biased or distorted thought process, attitude and behaviour by using self- monitoring and cognitive restructuring etc.
4. Mindfulness training
Objectives – experience new relationship with mind-body instead of same old pattern
To teach people how to manage every day stress by observes the moment by moment sensation, cognition and emotions without judging whether they are bad or good. The core principle is non-judging, patience, trust, non-striving beginners mind, acceptance and letting go.
Training involves mindful breathing, body scan, mindful walking, mindful meditation and mindfulness of everyday activities.
5. Behavioural rehearsal
Objectives – teach specific skills
Specific procedure that aims at replaces deficient or inadequate responses by efficient and effective behavioural patterns.
Training involves modeling, role-playing, etc.
6. Anger management
Objectives – reduce impulsive unwanted anger
Aims at minimize anger frequency, intensity, duration and moderate anger expressions. Training involves understand and modifying cognition (thinking), arousal (feelings), behaviour (its outcome).
Objectives – reduces discomfort and improve performance
To minimize anxiety, unwanted physiological arousal which result of faulty perception or learning.
Training involves relaxation, guided imagery, home work assignment and real life practice.
8. Communication skills training
Objectives – improving relationship and reduce conflict
To reduce inappropriate communication, conflict and maximize effective interpersonal communication, relationships.
Training focuses listening skill, assertiveness, and empathy skill etc.
9. Relaxation training
Objectives – minimize physical, physiological impact of stress
To reduce physiological manifestation of stress by teaching the person to become aware of muscle tension and to release that tension.
Progressive muscle relaxation- for example involves tensing and releasing various muscle groups until a deep relaxation state can be accomplished.
There are number of relaxation techniques such as autogenic, stretching, biofeedback, guided imagery, and meditation etc.
10. Modifying life-style
Objectives – mind – body and work life balance
Modification is necessary, if our present life style is not balanced and stressful. For example some of the followings are essential for everyone but many of us don't do it at all.
Eat balanced diet regularly
Allot time for exercise and relaxation
Manage your goal, time effectively
Delegate duties
Spend time with your family, friends often
Give time, space for yourself alone every day
Two or more of the above stress coping skill training combination will be effective. Identify your source and specific needs then select your programme accordingly.


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Tooling around the internet this evening I stumbled upon a rather wonderful stop-motion video over on YouTube, entitled Game Over. It was created by PES, who is actually Adam Pespane, and he uses all manner of various food products and other items from the home to recreate some moments from the classic 80's arcade games.
There is a wonderful interview with PES over on the The Animation Show site. So when you have a moment, make sure to hop over there and check it out!
Now I'm also including something that PES didn't have a hand in, at least that I am aware of, but it is just as awesome. Enjoy this Tron Evolution trailer and tell me if you didn't get chills at the end of it…especially when you realize who is narrating.
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from California is barely old enough to vote. She seems to
have one thing on her mind SEX!
She loves to taunt and and tease with her soft and shapely
you can see in these exclusive snaps from Dirty
Aly's site, she has a perfect body. She loves to show off
her perfectly shaped breasts with perky
Aly is a leggy blonde and has a fetish for getting off.
She loves to rub her mound and arch her back until she reaches
a total wet climax! Watch her dip
wet receiving hole!


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My impression in Pattaya
My husband like a bit of adventure. We decided to go to Thailand during the Christmas holidays and were glad we did.
We flew out of Heathrow with Emirates and flew economy class. However, economy was like flying 1st class! We got real wet warm flannels upon take off, generous and comfortable seats, as well as personal tv screens. It was a long journey, but flying with Emirates made it a comfortable as it could possibly be.
Airport- Arrivals:
Going through immigration was a long slow process. They are not rushed. So, you must just be patient.
Taxi to Pataya:
We had a taxi booked to go to our hotel. It was there waiting for us. It was airconditioned and got us as quickly as it could to our hotel. A 2 hour trip from Bangkok to Pattaya costs between ?10-20. Not a bad deal at all!
We stayed at the Cholchan Pattaya Resort. It is a beautiful hotel with lovely grounds, pool and very generous rooms. Our room was HUGE and all for a very reasonable rate. We seldom ate in the hotel, preferring to dine at small resturants around the resort and in the center of Pattaya. We found the food EXCELLENT! Just remember, if you think the food may not be to your standards, don't eat it. We enjoyed the local food. However, there is more Western food around. Cost- Prices start at about ?20 a night!!
We took a few trips. One was a wonderful trip along the Chao Phraya River on the Mekhala. Day 1 : Bangkok - Ayuthaya - Mekhala (Lunch, Dinner)
Depart from your hotel around 8 a.m. and travel by minibus to Ayuthaya. Upon arrival, visit the archeological site of the once glorious capital destroyed by the Burmese. Lunch at a local restaurant and then travel to Bang-Pa-In by long-tail boat to explore the Summer Palace. After this visit, your guide will drop you off to board the Mekhala. Cruise down the Chao Phraya River to Wat Kai Tia for a candlelit dinner. Overnight on board in your air-conditioned cabin.
Day 2 : Mekhala - Bangkok (Breakfast)
After a delicious breakfast on board, cruise down the river to Bangkok, passing spectacular views of the Grand Palace and the Temple of Dawn. Arrive late morning in Bangkok.
It was an overnight trip that is NOT to be missed!
Cost- Approxiamately ?75 each
We also went to the Sriracha Tiger Zoo which is an interesting experience seeing tigers and pigs raised together. Just 30 minutes' drive from Pattaya, this grand tiger zoo, located on an over-100-acre piece of land, boasts not only over 200 Bengal tigers, 100,000 crocodiles, and various kinds of animals in the natural atmosphere, but it also offers you many amusing activities and amazing shows. We had a personal tour guide on this and he was very accomodating. Cost- Approxiametly ?10
Then we went to the Nong Nooch Tropical Gardens. It is about 15 kilometers from South Pattaya. The entire area of some 500 acres is beautifully landscaped, with orchid nursery and other botanical gardens We really enjoyed this as there were various shows in traditional Thai boxing and Thai Dancing. The elephants were wonderful. We spent ages watching a baby elephant "peel" bannanas! Cost- Approx. ?7.50
Pattaya itself is a combination of Thai and Western influences. We enjoyed walking along the walk on the edge of the gulf and just relaxing. During the day, you can shop at a wide variety of outdoor markets and in door shops. The prices are great! Some places are:
- Baby So Soft Puppet Dolls, High Quality & Hand Crafted Original Dolls
- Buck-A-Gram American Indian Style Jewelry Great Prices
- Good Luck Shop in Windy Plaza on Beach Rd Gifts & Souveniers
I*ndian Shop Hand Made Leather & Gifts on 2nd Rd
- Luukmai Gallery on Walking Street Wood Carvings & Souveniers
- NL Gallery, South Pattaya Rd Art & Paintings
- Pattaya Shoes Dept Store & Manufacturer 2 locations
- Siam Art Shop on Beach Road (Link) Art & Paintings
- Sutin Fine Art, Windy Plaza Beach Rd Art & Paintings
- Tom's Gems & Jewelry Walking Street
Suggestion- Back very little with the intention of buying a lot. You WILL need the space or you can just buy a nice small suitcase for ?3 and fill it there!
At night you have a wide variety of pub style establishments to Girly Bars to Lady Boy Bars. Take your pick! Walking street has the majority and there is always a friendly smile to entice you in!
Food is cheap! You can get a complete English Breakfast fry up for ?1 and a lovely Thai maincourse for ?1.60!
One night there were 7 of use. We went to a local and stayed for 7 hours! We had drinks all night and nibbles off and on the entire night. At the end, our bill came to ?30!!! We definately gave a big tip!
Bangkok is another thing all together. It is a busy city with a lot of activity. We enjoyed people watching and shopping! However, that would be another review.
We would reccommend the things we did. However, you must be one that is able to realise this is a bit of an adventure holiday and treated it as such.
[ Edit: sorry, no promos in the forum please. ]


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|An example of homemade charm. Don't get attached! Being ripped out as we speak!
My watershed moment came when I started buying handmade things from etsy (when I had money. Violins) and realised they were just better. I don't mean this in an anti-consumerist, dignity-of-craft kind of way, I mean it just in really shallow terms. If I bought handmade I got miles better quality, unusual, effective things that I loved and enjoyed using, and which made the things I bought on the high street seem, well, a bit crap. And when you have had good quality things, you start to think, why should I pay what is after all only a bit less for a High Street something which has been produced in really questionable conditions and which I don't like as much? Aren't I worth more than that? So then I started making my own things because I was interested to see what it was realistically possible to integrate the making of into your life, and I discovered that actually some things (like soap) that I assumed before could only be made through a vast scary industrial process were actually really simple to produce at home and knocked anything L'Oreal could make into a cocked hat.
So now I have read books and poked my nose into things, and I can do the politics of why small production and handmade is good, and why big businesses don't always act ethically and what should be done, and that kind of thing, but really, I just still come back to my first impression. I've always found handmade things to be just better, in a cheerful, life-enriching way, and that is why I make my own or buy handmade when I can. Otherwise, frankly, I wouldn't be as motivated. I mean, obviously there'd still be the same arguments for, say, why Tesco shouldn't be allowed to expand unchecked, if they still had all the same crappy business practices but they produced food that was like the nectar of the Gods: but for me the most effective argument is, if I make a scone myself it will be light, fresh, delicious and satisfying, whereas if I buy one from Tesco it will not. It will be a strange simulacrum that will leave me unsatisfied and will probably make me keep eating because I'm not full from a satisfying meal. And why should I have a nasty scone rather than a nice one? Don't I merit a nice scone? (Is that the worst anti-Tesco rallying cry ever? Let's never put it on a tshirt).
In fact, if I was cynical, I would say that this is how consumerism works, we're sold things that are never quite right and because they are so unsatisfying we keep on buying more until we run out of money or end up on Hoarders. But obviously, as you know, I do not have a cynical bone in my body, so I just cook and knit and make cosmetics, whether it is unpowerful or unfeminist or not, and I enjoy all my stuff more than if I were buying it. In fact that's the final irony in a way: all of us breaking our necks and ruining the planet to get Money to buy Stuff and then it's just a mass-produced simulacrum of a satisfying thing and we could just have made it ourselves and it would have been better and more fun.
What do you think? Is handmade better or is this a slippery slope which will end in me making my own knickers and boasting about it? (I do actually make my own knickers. And they're very comfy! OK, things are worse than I ever suspected).


text:
Adult acute care medicine, cardiology, clinical education
I believe in civil, open, safe, and respectful learning environments where all persons feel safe and valued. I also believe in being a facilitator in the self-directed learning journey and engaging in constructive feedback.
Penconek, T.K. (2015). Perspectives on bullying: A qualitative study into academic incivility among nursing students. Alberta RN, 71(1), 28-29.
Penconek, T.K. (2015, November). Poetic Analysis of Perceptions of Newly Graduated Nurses regarding their Experiences of Academic Incivility between and among Nursing Students in Undergraduate Nursing Education. Poster session at the Sigma Theta Tau International Honor Society of Nursing 43rd Biennial Convention, Las Vegas, U.S.A.
Penconek, T.K. (2015, September). Civility in Nursing Education: Background and Clinical Exercises. Presented at the BN 2nd Annual Clinical Instructor Workshop, Athabasca University, Edmonton.
Penconek, T.K. (2015, June). Civility in Nursing Education. Presented at BNPC, Athabasca University, Edmonton.
Penconek, T.K. (2014, January). Silent No More: Incivility in Nursing Education. Poster session presented at the 4th Annual Every Nurse Symposium, MacEwan University, Edmonton.
Penconek, T.K. (2013, August). Academic Incivility. Presented at the BScN Faculty Workshop, MacEwan University, Edmonton.
Updated December 18 2015 by Student & Academic Services
AU, CANADA'S OPEN UNIVERSITY, is an internationally recognized leader in online and distance learning.


text: You can play Port Car Parking free online car games at fogames. It has tags: Driving,3d,Car,Parking,Upgrade,Webgl. It has 971 total plays and has been rated 78.3% (2 like and 1 dislike), find the fun and happy day. If you want to play more car games, we find some of the game: Supercar Parking 2, SUV Parking 3D, Skill 3D Parking: Mall Madness and Parking Trainee. To play other games, go to the driving games page, the 3d games page, or just check out the new games or best games page.


text: I'm embarassed by how much I enjoyed this movie. The Rock does pretty good, considering he doesn't have to do much other than hit people. Stifler is... well, stifler. He's not as annoying as he was in American Wedding, though. And Christopher Walken is officially the weirdest actor out there, his completely insane inflections made the movie for me, I smiled every time he was on the screen. Very entertaining, throughout, though. It is unique to see an action hero who makes it a point not to use guns, though the climax kind of ruins that. By the end, I was so wrapped up in the movie, I forgave a very outlandish act on The Rock's part (the guy destroys a building by DIVING THROUGH THE SOLID BRICK PILLARS and collapsing them). Great, mindless fun.


text:
Interested in what is going down this week in New York at the United Nations General Assembly? Not too worry, we have put together a small guide on what will be going down and how you can participate virtually.
The world is listening as the 70th Session of the UN General Assembly convenes this September in New York. Help spread the word by using these hashtags:
#UNGA, #GlobalGoals and #Action2015
DPI's Social Media Team will be covering a wide range of events and conferences throughout the month. To find out more follow us on:
Twitter: https://twitter.com/un
Instagram: http://instagram.com/unitednations
• Facebook: https://www.facebook.com/unitednations
• Snapchat: united-nations
Arabic, Chinese, French, Spanish, Russian + more here: http://www.un.org/social/
Ways to Get Involved on Social Media
• Feature the series of social media content and products, developed by the United Nations Department of Public Information and partners to engage the public.
• To make it easier to follow all activities, use #UNGA hashtag when posting on your various platforms. For the Sustainable Development Summit, use #GlobalGoals and #Action2015. Uses of these hashtags will be highlighted on UN accounts.
• Encourage your followers and fans to get involved and support the Sustainable Development Goals. Ideas for taking action are at: http://j.mp/takeSDGsaction2015
• Follow the UN for updates. A list of the UN's social media platforms can be found at: www.un.org/social
• Share the products and messages with staff maintaining your mission or government social media accounts, your networks and partners to help amplify reach. •
Encourage your national influencers to get involved by posting content and materials on their accounts.
Digital products in the six official languages and suggested social media messages are available at: http://j.mp/ungasocial and http://j.mp/summitsocial
Questions, comments and content submissions: email@example.com.
(Source: United Nations Social Media Team)


text:
Flames' Matthew Tkachuk suspended two games for illegal hit
- Author: Julie Sanders Mar 21, 2017,
Mar 21, 2017, 6:16
Defenseman Dougie Hamilton (46 points) recorded a goal and four assists in his last four games while Gaudreau, Backlund and Sean Monahan (46 points) combined for only a goal and assist in the last three contests.
The Flames moved into third in the Pacific Division past the Edmonton Oilers, who will host Los Angeles on Monday.
The Kings got goals from Dustin Brown and Nic Dowd.
"It's just that every game I've played against him basically, me and him get after it a little bit", Doughty said via LA Kings Insider. "Those quick strikes hurt us".
The incident occurred late in first period of Calgary's 5-2 victory over the Kings on Sunday. "You're not in a normal routine of eating and drinking and getting all the nutrients you usually get in, but I wanted to get back in there", Elliott, who is 14-1-1 with a 1.87 goals-against average and.936 save percentage in his past 16 starts, told reporters.
Tkachuk was behind the Kings' net Sunday night when the puck rimmed around the boards toward him. With time to perform any number of evasive or defensive manoeuvres, Tkachuk instead takes his bottom hand off of his stick and throws an elbow into Doughty in a way that can not be considered inadvertent, reflexive or defensive.
In 68 games, Tkachuk has 13 goals and 46 points, tied for fifth among National Hockey League rookies. Ferland's absence made room for Curtis Lazar to make his debut for the Flames.
The Kings couldn't get much going after that as the Flames tightened up defensively to record their second straight win and 12th in their past 13 games.
Tkachuk will miss the Flames' upcoming games Tuesday at the Washington Capitals and Thursday at the Nashville Predators.


text:
Bobsled is a joint venture between T-Mobile and software company Virox. It's a VoIP and messaging platform built on top of Facebook as a backbone. It was released last spring at a press event in New York City and has made an appearance at every T-Mobile party since then.
Bobsled has announced the availability of an Android app that gives you the same features as you can get on Android powered smartphones, including VoIP calling. Once you sign up for a Bobsled account you can make actual calls to people, leave voice mails, instant messages and text messages. Essentially bringing almost full phone capabilities to a Honeycomb (or ICS) tablet.
More after the break
In order to use Bobsled on your tablet you need a connection to the internet, wifi or 3g/4g will work fine. Of course the other big thing you'll need is a microphone and a speaker. There are some tablets that don't have microphones.
Provided you have all those things ready to go on your Android tablet, just download Bobsled from the Google Play store and you should be in business, making calls, text messages and voicemails right from your tablet.
Also, even though Bobsled is a joint venture between T-Mobile and Virox it doesn't require T-Mobile service.
source: Phandroid


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We're very excited about the new fruition snack bars which are just now starting to hit stores. Perhaps you've been lucky enough to try one. Peach is my favorite in case you were wondering.
If you've not had a chance to even see what fruition looks like here is a copy of an ad that is running in the current issue of delicious living magazine, a healthy living and natural food magazine that's worth picking up if you've not seen it.
The copy says it all about fruition that it's "a blend of the highest quality organic ingredients including whole grain oats, pure fruit chunks, chia seeds and cashews, fruition is simply real."
Sometimes it's just nice to toot your own horn when you show up in print, be it an ad or editorial.
(check out the back to nature crackers – I love their stuff too)


text: Neighborhood Legal Services (NLS) in Buffalo, New York, has moved from performing client intake once or twice a week using handwritten intake sheets to performing intake daily using computer technology. In doing so, NLS increased its case openings from 4,800 per year to almost 9,000 last year. This column describes the old intake system, details the problems with it, and explains how many of those problems were resolved with the design of a new intake system.Download this article


text:
Domestic Referral Agencies register independent domestic workers that offer household referral services to clients. The domestic workers receive client job offers on the days, times and locations of their choice. Anita's Housekeeping Referral Agency is not the employer of domestic workers they refer to clients.
Clients have access to a wide range of household services at affordable rates with scheduling flexibility. They will get experienced and screened domestic workers. Anita's also follows up with clients to assure they were satisfied with the referral.
Yes! This is a truly thoughtful, yet practical gift for family, friends and work associates. Stop shopping and call our office today to order an Anita's gift certificate!
This is determined by the size and condition of your home, as well as what house cleaning you would like done.
There is no cookie-cutter list of what will be done on your dime – you choose the cleaning priorities. Because client needs vary, you can provide the domestic worker with a "Cleaning Priority List". This is an excellent way to communicate your particular needs. If you have regular service you could make copies of your list and leave a note of changes as they arise.
It is helpful for you to meet the domestic worker, especially on their first visit. This gives you an opportunity to go over any questions they may have regarding your Cleaning Priority List and introduce them to any pets. Of course, any unfriendly pets should be kept outside or in an area the domestic won't be cleaning.
If you are unable to meet the domestic worker,many different arrangements can be made. Some suggestions could include using a lock box, leaving the key with a neighbor or possibly hiding the key on the premises. If you have an alarm system, either disengage it for that day or explain the system use to the domestic worker.
If you like the domestic worker and decide to set up regular service, this can be arranged based on the domestic workers availability. If your scheduled domestic worker can't make it, for whatever reason, we will attempt to reschedule for a different day or arrange for a substitute domestic worker. If your regular domestic worker is no longer available, we will provide a new referral so you receive continuous service.
Yes! Even though most clients schedule service on a regular basis, we also provide service on request as needed.
Payment is due and payable at the time the service is provided. Cash, check, debit or credit cards are accepted. Please make checks payable to Anita's Housekeeping Agency. Call our office prior to the service if paying by debit or credit card. We accept Visa, MasterCard, American Express or Discover.
Tips are always appreciated, but not required, you decide! Many clients tip the domestic worker directly, anywhere from 10 to 20%.
If you need to reschedule or cancel your service, please notify our office two-business days prior to your date of service. There is a $30.00 fee for cancellation of service without two-business days notice.
If you are not happy, for whatever reason, please contact us right away so the domestic worker can promptly address the issue. We can also refer a different domestic that better fits your needs. Our mission is to always have happy repeat clients.
The domestic worker accepts sole responsible for property damages or lost house keys, which occur as a result of their actions.
For your peace of mind and protection, we complete both a background screening and reference checks on all domestic workers before referrals are made; additionally, we keep diligent records to establish an accurate referral history. In the rare event that you think something is missing, you may decide to file a police report. Anita's will cooperate fully in any investigation. While many companies advertise that their cleaners are bonded, most clients are unaware that theft bonding only pays upon conviction.
All domestics workers registered with Anita's Housekeeping sign a Referral Contract Agreement, which prohibits them from working directly for any client obtained through Anita's Housekeeping and for a nine-month period following termination of their association with Anita's. Please don't solicit them or encourage them to solicit you, as we will legally enforce this contract. If you are interested in permanent placement of a domestic worker, please call our office to discuss arrangements. Thank you for your cooperation.
Do you have a question that wasn't answered on our FAQ page? Feel free to call us at (619) 220-6855 or fill out the form below!


text:
Since most cities offer some type of employer-sponsored health plan—including a health plan, dental plan, medical reimbursement plan under the city's cafeteria plan, etc.—your city will likely have to comply with some of HIPAA's privacy and security standards.
Before your city can determine if it is subject to the HIPAA privacy and security requirements, an assessment of each of the city's benefit plans must be conducted. It is important for each of your city's health plans to be reviewed independently—one plan could be subject to the full HIPAA requirements while another may have only minimal requirements to meet.
To help determine your city's status as a covered entity, the League has created a HIPAA Assessment Tool. The HIPAA Assessment Tool includes the following components:


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Emerging Designer: Christian V Siriano
11/23/2008 11:11:00 PM Posted by Christina
The AMAs were a bore, but the some of the fashion choices were anything but.
The spotlight designer of the night was upcoming designer, Christian Siriano.
At only 22 years old, he is already known as the Marc Jacobs of his generation. A Maryland native, he has been a passionate designer since he was 13.
Siriano's dream of being a designer came true when he became the youngest winner of Project Runway, in the 4th season.
Since then he has launched a Fall 2008 line and most recently, a Spring '09 line. From feathers, to ruffles and layers in basic colors like black, white and gray, the Christian Siriano label is quickly and effectively evolving.
Known for his quirky style and bubbly personality, Christian Siriano certainly is making his mark in the fashion world.
He has personally designed for celebs like Victoria Beckham, Heidi Klum, Becki Newton of Ugly Betty, Estelle, and most recently the Pussycat Dolls. Although I am not a fan of the group, Siriano did a fab job designing their outfits for the awards show.
Here are a few designs from Christian Siriano's spring '09 collection.
Can we say fabulous?!


text:
CVGS Goes to Richmond
On Monday, February 9, 2015, five CVGS students went with Dr. Smith to Richmond to meet with area legislators. The delegation included three seniors, Dan Brown, Ravdeep Mathone, and Haley Roeser, and two juniors, Whitley Drinkard and Sam LeFew. The students first met with House delegates Kathy Byron, Ben Cline, and Scott Garrett, and then observed the House proceedings from the Gallery and were introduced to the House by Delegate Garrett. The students were then able to meet with Senator Steve Newman and Senator Tom Garrett's legislative aide, Mr. Kevin Reynolds. The students shared their perspectives on the value of the opportunities provided at CVGS, state funding for K-12 education, future changes to the Academic Year Governor's Schools funding formula, and a couple of bills which were at that point still in committee. Their busy morning was followed by lunch and a tour of the Capitol, and a few photos from the day can be found on our CVGS FaceBook page. These five students did an outstanding job representing the Central Virginia Governor's School, their home high schools, and K-12 education in Commonwealth in general. A short video of their introduction to the House can be found here http://www.youtube.com/watch?v=LU2rpdIkoEA&authuser=0


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ATI Radeon HD 5770 Reference Fan:
ATI Radeon HD 5770 Idle Test:
At a complete idle with no other programs running the Radeon HD 5770 had an idle temperature of 35C. As you can see from the screen shot above, the idle state of the Radeon
HD 5770 drops the GPU frequency down to just 157 MHz and the memory
down to 300 MHz to help conserve power and lower temperatures just like the other Radeon HD 5700 and 5800 series cards.
ATI Radeon HD 5770 Load Temperature:
The ATI Radeon HD 5770 maxed out at 75C, but fluctuated
between 74C-745C once it leveled out. The fan on the ATI Radeon HD 5850
video card was left on auto during temperature testing. Once the card leveled off we turn off GPU rendering and took notice how look it took to recover. The cards cooling solution quickly reduced the temperature once the GPU load ended and had the card back to 63C fairly quickly and leveled off there. The card never fully recovered, which is interesting to say the least. Maybe some of the rumors about the hot air getting trapped in the plastic shroud due to the small exhaust vent have merit.
Just for fun let's take a look at NVIDIA's video card thermal performance for this price range. To see how AMD stacks up to NVIDIA.
BFG Tech GeForce GTS 250 OC Fan:
BFG Tech GeForce GTS 250 OC Load Temperature:
The BFG Tech GeForce GTS 250 OC topped out at 77C and recovered very quickly almost back to the starting point. When it comes to temperatures the AMD Radeon HD 5700 series tops out at 75C, which is very good. The direct competition to the cards also tops out around this temperature though, so when it comes to temperatures you can flip a coin.
The highlight of temperature testing was clearly the custom cooler being used on the Sapphire Radeon HD 5750 graphics card as it never broke 70C!
Comments are closed.


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My LomoStory: Sasha5 16 Share Tweet
My LomoStory began with a pamphlet. I had innocently chanced upon this brochure, displaying Diana in all her plastic glory. Needless to say, I was infatuated. Initially, it was merely physical. I wanted Diana for her body!
I went home and like a world-class stalker, I feasted upon page after page of Diana photos and Diana forums. I was caught head over heels. I needed a Diana and I needed one now.
When my mother finally eventually gifted my Diana to me, I flipped. Here I was, holding the camera which I had been obsessed with for months. I was afraid but at the same time I knew I could do no wrong. When I held her in my hands, I could feel the pulsing power radiate from beneath her plastic exterior. Inside, Diana was golden.
With every roll of film, my love for Diana grew deeper. I fell in love with her and how she never pretended to be anything more than what she was. How forgiving she was, how she could make even the most ruined photos look fantastic. I loved her carefree personality, how she felt that even the simplest things deserved to be captured on film. Diana helped me become better and Diana made me want to become better. And I supposed, in all honesty, that is what love is—when you want to be better for someone other than yourself.
I must admit, I was not 100% faithful to Diana. All relationships have their ups and downs. At one point in time, I returned Diana back to her rarely-filled perch upon my bookshelf. For the next year, she did not take photos like she was born to do, but gather dust and stare longingly at everything around her that could be captured forever if I just had the decency to click her shutter.
It was not her, it was me. I can't say I had moved on, because I hadn't. I just wasted time doing nothing, while Diana wasted time not being mine.
I don't know what drove me to pick her up one year later. Maybe I missed her company, maybe she missed mine. My Diana was ready for her comeback!
But the first roll was less than spectacular and that made me miserable. Had Diana lost her faith in me? That was when I realized that Diana was more than a camera. She was a camera that could easily capture your personality as well. When we first met, I was fresh, new, excited, amazed, proud. So her pictures showed likewise!
When I shot my first roll after our reunion, I was blur, confused, unfocused and dull. And that's why the pictures turned out the way they did.
Slowly, it got better. I learnt that you must never second-guess yourself. If you feel like snapping, do it without hesitation. If you don't, don't worry about it. It worked the other way around too. Sometimes, if I didn't know how to feel, I shot a picture to give myself some clues!
We were old friends, Diana and I. Joined at the hip and inseparable once again. It wasn't that she was not enough, but eventually I started to crave the company of other Lomography cameras.
It took time, it took determination, but over time, I managed to expand our Lomography family. Diana got a makeover with an Instant Back, and we welcomed the Oktomat, the La Sardina and finally, the Lubitel.
It has not been easy managing the needs of so many different cameras. We have had our quarrels and differences, but we have pretty much remained a tight-knit unit. They are my best friends.
My story is no more amazing then the next guy's. For every unique, remarkable and extraordinary camera, there is a equally amazing story on how we met our Lomography soulmates!
The Diana F+ is a new twist on the '60s classic cult camera. Famous for its dreamy and soft-focused images, the Diana F+ is now packed with extra features such as panorama and pinhole capabilities. Available in our Online Shop.
written by awfullysasha on 2012-01-02 #lifestyle #singapore #sasha #lomostory #lomography #diana #diana-f #analogue-lifestyle #awfullysasha


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By Russell Maddicks
Venezuelan ska veterans Desorden Publico are marking 25 years in the music business with their long-awaited new album called Los Contrarios.
The new CD sees the Caracas-based nutty boys return with the kind of irreverent black humour, social comment, and high energy that made them so popular in the late 1980s, when they were inspired by British ska bands like The Specials, Madness and The Selector.
Melding ska, salsa and cumbia rhythms into joyous dance numbers, Desorden Publico have long mastered the art of getting huge stadium crowds across the world to stand up and skank, earning them the title the Latin Kings of Ska.
The new album promises more of the same with tracks like "Musica de Fiesta" throwing Balkan gypsy stomping into the ska mix, and "Llora por un Dolar" providing a lilting reggae beat to accompany a sarcastic sing-a-long vocal.
There are two covers on the album, a version of Venezuelan folk singer Ali Primera's "Dispersos" and "City of the Dead" by punk legends The Clash, another key influence on Desorden's sound and attitude.
Listen out for a very special guest appearance by Ruben Albarran from the Mexican rock band Cafe Tacuba on the track "El Poder Emborracha".
"Cristo Navaja", the first single from the album will be formally launched on 8 June in the Venezuela-Colombia border city of San Cristobal de Tachira, where the video for the cumbia-ska track was shot.
To see a video of Desorden Publico performing "Monkey Ska" on a double decker bus in London click here.
To see a video of Desorden Publico rehearsing new tracks with BBC presenter Jonathan Dimbleby click here.
To see a video of Desorden Publico rehearsing tracks from the new CD click here.


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You'll flip over this quick, easy, and delicious Broccoli and Cheddar Four-Cheese Pizza recipe! Use your favorite crust recipe or grab some fluffy naan flatbread for the speediest of shortcuts.
Since writing last month's pizza post I've had pizza on the brain which, as you know, directly translates into pizza in the face. It's just how I operate.
Now, for someone who eats pizza as often as I do, you'd think I'd have a go-to 'za and stick to it. Nope. Niet. Not a chance. Can't do it. I have to make a different one every single time, even if it's just a tweak or two, it absolutely cannot be the same pizza I shoved in my mouth the week prior.
Crap did I really just write 'za in a blog post? First calci-yum and now THIS? I've got to stop hanging around my husband; he's hijacking my vocabulary.
Oh hi recipe post! Food blog! Back on track, you!
:: pin it for later ::
You guys have got to start laying down the law when it comes to my behavior. Otherwise the tangents will never stop and we'll be talking about puppy dogs and jorts before you know it. Oh gosh tell me I'm not the only one now picturing a puppy in jorts! The cuteness! I'm hopeless.
Long story short, my peeps at Cabot sent me a recipe booklet with all sorts of cheesy goodness and their Hot Broccoli Cheddar Dip inspired me to leap into the kitchen. I had naan. I had cheese. Now I have pizza! You can have pizza too! The end.
This whole ordeal would have been much more quick and to the point if I hadn't had that second cup of coffee. You should see me after a third! Woof!
Broccoli and Cheddar Four-Cheese Pizza for Two
Broccoli and Cheddar Four-Cheese Pizza
You'll flip over this quick, easy, and delicious Broccoli and Cheddar Four-Cheese Pizza recipe! Use your favorite crust recipe or grab some fluffy naan flatbread for the speediest of shortcuts.
- 2 fluffy naan flatbreads
- 2 TBSP melted butter or olive oil
- 2 cloves garlic, minced
- 1/4 tsp dried parsley
- 1/4 tsp dried basil
- 2 cups chopped broccoli florets
- 1.5 cups grated cheddar, Gouda, and Parmesan cheese (1+1/2 cups cheese total)
- 2-3 TBSP crumbled feta cheese
- get cooking!
- Set your oven or toaster oven around 350F. Melt butter with fresh minced garlic, parsley and basil and spread onto the naan. Bake for around 8-10 minutes straight on the rack until lightly golden with a fluffy center.
- Chop the florets from the raw broccoli until it looks more like confetti and less like baby trees. I suppose you should also pretend that's technical cooking terminology. Either blanch or steam the florets until bright green and tender. As a shortcut, I filled a bowl with the florets, poured boiling water from my Keurig over the broccoli and then waited a few minutes before draining with a mesh strainer. You haven't really lived until you've cooked broccoli with a coffee pot.
- After draining the water from the florets, return to the bowl and add cheddar, Gouda and Parmesan cheeses. Spread on the garlicky baked naan and top with crumbled feta. Return to oven and bake for 15-20 minutes until crispy and melty perfection is reached. Slice and serve!
I think I just fell even more hopelessly in love with broccoli.
Try this Broccoli and Cheddar Four-Cheese Pizza Flatbread today!


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TAMPA — The local chapter of the NAACP is stepping in where others have failed to save the historic Jackson House.
Carolyn Collins, president of the Hillsborough County branch of the NAACP, told Tampa City Council members Thursday that her group will lead an effort to secure and restore the 113-year-old rooming house, which is in danger of collapsing. Other groups and individuals have championed the Jackson House in the past, but an organized plan and funding to save the structure have failed to materialize.
"We want to do it for the history of Tampa and to make sure we maintain not only the history of the city, but the African- American community," Collins said after the meeting.
She said the project would cost between $2 million and $3 million, but did not elaborate on a source for the money.
The group will announce details of its plan to save the Jackson House in coming days, Collins said.
The executive board was set to take a final vote to approve it Thursday night, she said, and a community meeting will be held next week.
"We're going to do this one right," she said.
The Jackson House, at 851 E. Zack St., is a legacy of Central Tampa's once-thriving black business and entertainment district. The frame house once hosted the likes of Ella Fitzgerald, the Rev. Martin Luther King Jr., James Brown and Cab Calloway.
But the old building has deteriorated in recent years. City code officials deemed it a "safety hazard," saying it could collapse at any time.
A crumbling chimney was removed last summer, and the property remains roped off from the public.
In October, Hillsborough County Tax Collector Doug Bel�den, who attempted to form a coalition of civic activists to preserve the Jackson House last year, called the undertaking "too cost-prohibitive."
The city council had requested an update on the status of the house at Thursday's meeting.
City Attorney Julia Mandell told council members that city staffers are speaking with property owner Willie Robinson Jr. and his lawyer about what the next steps will be concerning the Jackson House.
The priority now is to stabilize the house, ahead of bringing it into code compliance and meeting historical preservation guidelines, Mandell said. The Jackson House is not scheduled for demolition, which would be a last resort.
"But there are concerns," Mandell said. "The structure is not stable."
Twitter: @LizBehrmanTBO


text: Jason Joyner is a member of Boy Scout Troop 122 from Osceola. He was one of about 35 from his group who had a busy weekend recently with duties at the Osceola Bluegrass Festival, in addition to another service project and a fundraiser. Jason is an eighth-grader at Grissom Middle School.


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The Tale Of a Wonderfully Curious Romance
Once upon a time
is the way most tales begin
but this one is a little different.
In a pink palace, nestled away on McKenzie Avenue,
lived a young princess some called Little Joan.
Unlike most princesses, this sovereign girl
Unlike most princesses, this sovereign girl
dressed in leather and defiantly changed
her lovely locks from honeyed gold to Jett black.
her lovely locks from honeyed gold to Jett black.
She realized early that she would rather rock out than frolic
in a field, as most princesses tend to do. She built a music chamber
in her dungeon, where, instead of picking petals, she picked
a guitar. She tutored herself in the arts of Townshend
and Honeymann Scott until she found her own groove.
She never allowed herself to be wooed by the pursuits of gallant
princes but instead invited a dandy one to the ball.
There, they exposed their true selves despite
the traditional corsage and boutonniere
they pinned to one another's bodies.
Over the years, this maid grew into a maiden.
Her virgin skin gave way to a magnificent tapestry
that included dancing skeletons and Sir Ozzy With Rhodes.
Her golden locks returned but the cut was rumpled
and too un-princess-like for some with traditional taste.
A series of doomed loves and failed musical troupes
only seemed to strengthen this maiden's resolve
for finding her own unconventional fairy tale ending.
A few provinces away, in a different garden in this same state,
lived a daintier princess. Unlike the rocker one,
this noble maid followed a more time-honored path.
She harvested great joy tending to her gardens
giggling and frolicking among her flowers.
She held an affinity for horses, as many maids do, and fell
into popularity among the youth of her kingdom.
She cheered on the masters at the royal games
and acquiesced to the courtships of noblemen
with a titter and coy flutter of her fan.
She adopted the classical veil of princess by tossing
a bouquet into a hopeful crowd of maids and by dutifully
ruling over a nobleman's castle. But this contentment was short lived,
for she found herself trapped in a tower
built of tradition and Tupperware.
She found this storybook life was one unworthy
of her pursuit and escaped this stifling stockade. She, too,
embarked on a pilgrimage for finding her own unconventional fairy tale ending.
One princess preferred the grating of rock-n-roll
while the other preferred the twang of country,
so it may come as a surprise to learn that it was music
that bound these two together.
One maiden's resting quarters renovated into a music
chamber for the other. And one maiden's horse power
gave way to the power of another's horse.
In time, their love-at-first-sight renewed into a love
usually only reserved for the conclusion of fables.
The daintier and rocker princesses found in one another
the happy ending that they were searching for.
On one picturesque day, these two princesses stood before
their court and expressed to one another a devotion
built on truth. Those present were enchanted forever by what
they witnessed that day and by the knowledge that
sometimes it's not always a prince that rides in to save the damsel.
And that sometimes it's not always a horse drawn carriage,
but rather a horse powered hog, that carries them into
happily ever after.
written for the union of Carolyn and Beth, October 16, 2011
copyright Robert Paul Langdon, 2011.
This an other poems are available in print and digital in "The Candied Road Ahead: Poems and Stories." Available by clicking here.