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Dear readers — thank you. It's been a joy to hear all your comments on our fair trade giveaway, and hear about your support for fair trade.
And just as much fun to hear your sweet comments on our cookbook. It was truly heartwarming to read through the comments over at Pinch of Yum, where Lindsay is giving away 3 of the cookbooks! Make sure to check out her Green Mango Cafe Cookbook Giveaway. (And, Lindsay was kind enough to contribute a few photos and recipe testing to the cookbook — just days before she left for the Phillipines, where she is currently teaching in an orphanage! Amazing? Yes.)
All that to say, we feel extraordinarily blessed to have readers like you — no joke. We wish we could talk to each one of you in person — thank you for reading, and ask you about what kind of recipes and posts you enjoy. But for now, we'll just have to keep guessing :) And since we love healthy desserts, we're hoping you enjoy them as well!
We based this recipe on this rhubarb crumble recipe that we loved eating this spring. We substituted apples for rhubarb and strawberries, but kept the fresh ginger, which adds a delicious twist. The recipe has no refined sugar – just honey, our favorite natural sweetener. And, it's pretty easy to put together!
As the weather starts to become cooler (at least in our part of the world!), we're loving this as a comforting dessert.
- 4 apples (around 4½ cups)
- 1 tablespoon fresh ginger (minced)
- ½ teaspoon cinnamon
- ½ tablespoon balsamic vinegar
- ⅓ cup honey
- ¾ cup oats
- ¼ cup slivered almonds
- ⅓ cup whole wheat flour
- ⅛ teaspoon kosher salt
- ¼ cup honey
- 2 tablespoons butter, melted or very soft
- 4 half-pint canning jars
- Preheat oven to 375°F.
- Peel, core, and slice 4 apples into small pieces. Peel the ginger and mince or grate 1 tablespoon. In a large saute pan, mix together the apples, ginger, ½ teaspoon cinnamon and a pinch of kosher salt. Stir in ½ tablespoon balsamic vinegar and ⅓ cup honey. Saute until softened, about 15 minutes.
- Meanwhile, in a medium bowl, combine ¾ cup oats, ¼ cup slivered almonds, ⅓ cup whole wheat flour, ⅛ teaspoon kosher salt, ¼ cup honey, and 2 tablespoons softened butter.
- Divide the fruit mixture into 4 half-pint canning jars or ramekins. Spread the crumble over each jar, pressing down on the crumbs to ensure that none are above the mouth of the jar.
- Place the jars on a baking sheet and bake 15 minutes until top is brown. Cool for 10 minutes and enjoy.
Also note that any small dish or ramekin works for baking instead of using canning jars.


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Keep in touch with UGASports.com
TALLAHASSEE, Fla. - Fourth-ranked Florida State used a four-run seventh to break a 4-4 tie and went on to defeat Georgia 10-4 in front of 6,568 fans at Dick Howser Stadium Saturday.
"We were in good shape at 4-4 heading to the seventh, and then we shot ourselves in the foot those last two innings," said Georgia coach Scott Stricklin. "We're not throwing the ball in the strike zone and we need to challenge their hitters. It was a great crowd today and a good game until the seventh but we played nearly a four-hour game and that's not fun to watch."
Georgia (1-5) grabbed a 1-0 lead in the first. Freshman centerfielder Stephen Wrenn led off with an infield single and with one out scored on a double by junior left fielder Hunter Cole. Georgia had a chance for more but left two runners in scoring position as junior left-hander Brandon Leibrandt escaped further trouble. In his first start of the season last Saturday, Leibrandt tossed six scoreless frames and allowed just four hits. The Bulldogs managed three hits in the first frame as Cole extended his hitting streak to six games and Wrenn at four games.
FSU (6-0) tied the game in the bottom of the second as Jose Brizuela had a leadoff single, stole second and scored on a two-out double by Ben DeLuzio off sophomore Sean McLaughlin. The Bulldogs responded by reclaiming the lead courtesy of Cole who belted a two-run home run in the third to make it 3-1. Junior Nelson Ward was on after drawing a one-out walk. FSU answered with a two-run home run by DJ Stewart with one out in the third to tie the game at 3-all.
Junior left-hander Jarrett Brown delivered clutch relief when FSU threatened in the fifth. After the first two Seminoles reached, Georgia went to the bullpen. Brown retired the 3-4-5 hitters in the FSU lineup to keep it a tie game.
In the top of the fifth, FSU went to its bullpen as left-hander Bryant Holtmann came on in relief of Leibrandt. Georgia got a pair of one-out singles from Conor Welton and Brandon Stephens to put runners at the corners for sophomore second baseman Cody McCance. He worked the count full and then came through with an RBI-single to put Georgia back in front 4-3. It was McCance's first career hit as a Bulldog. FSU would employ three pitchers in the inning and keep it a one-run contest as the Bulldogs left the bases loaded. FSU tied the game in the sixth on an RBI-single by Danny De La Calle. With two on and two out, Georgia looked to Jared Cheek, and he struck out Justin Gonzalez.
However in the seventh, Stewart smacked a leadoff double off Cheek, took third on a sacrifice bunt and scored on a groundout by John Nogowski to give FSU a 5-4 lead. The Seminoles would send nine to the plate and add three more runs in the inning to build an 8-4 advantage.
Gage Smith (1-0) picked up the win in relief with 1.1 scoreless innings while Cheek fell to 0-2, allowing four runs on one hit with three walks and three wild pitches in an inning. The game lasted three hours and 50 minutes.
The series concludes Sunday with first pitch slated for 1:03 p.m.

subset: commoncrawl


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VATICAN CITY -- Pope Francis named eight cardinals from around the globe Saturday to advise him on running the Catholic Church and reforming the Vatican bureaucracy, marking his first month as pope with a major initiative to reflect the universal nature of the church in key governing decisions.
The advisory panel includes only one current Vatican official. The rest are cardinals from North, Central and South America, Africa, Asia, Europe and Australia. Many have been outspoken in calling for a shake-up of the Vatican bureaucracy, which was last reformed 25 years ago, while others have tried to clean up the church from sexually abusive priests.
In the run-up to the conclave that elected Francis the first Latin American pope one month ago, many cardinals demanded the Vatican be more responsive to their needs on the ground and said the Holy See bureaucracy itself must be overhauled. Including representatives from each continent in a permanent advisory panel to the pope would seem to go a long way toward answering those calls.
In its announcement Saturday, the Vatican said Pope Francis got the idea to form the advisory body from the pre-conclave meetings where such complaints were aired. "He has formed a group of cardinals to advise him in the governing of the universal church and to study a revision of the apostolic constitution Pastor Bonus on the Roman Curia," the statement said.
Pope John Paul II issued Pastor Bonus in 1988, and it functions effectively as the blueprint for the administration of the Holy See, known as the Roman Curia, and the Vatican City State. The document metes out the work and jurisdictions of the congregations, pontifical councils and other offices that make up the governance of the Catholic Church.
Pastor Bonus itself was a revision of the 1967 document that marked the last major reform of the Vatican bureaucracy, undertaken by Pope Paul VI.
A reform of the Vatican bureaucracy has been demanded for years, given that both John Paul II and Benedict XVI essentially neglected in-house administration of the Holy See in favor of other priorities. But the calls for change grew deafening last year after the leaks of papal documents exposed petty turf battles within the Vatican bureaucracy, allegations of corruption in the running of the Vatican city state, and even a purported plot by senior Vatican officials to out a prominent Catholic as gay.
Pope Francis' advisory group will meet in its inaugural session Oct. 1-3, though Pope Francis is already in contact with the group's members, the Vatican said. No other dates were announced.
The Vatican spokesman, the Rev. Federico Lombardi, stressed that the cardinals are a consultative body, not a decision-making one, and that they won't take the place of the Vatican bureaucracy. His comments appeared aimed at reassuring Vatican bureaucrats that they weren't being sidelined by a counterweight advisory body that better reflects the geographic distribution of today's church.
The church is growing and counts most of the world's Catholics in the southern hemisphere, while it's shrinking in Europe. Yet the Vatican and the 200-strong College of Cardinals, traditionally the pope's primary advisers, remain heavily European.
The members of the panel include Italian Cardinal Giuseppe Bertello, president of the Vatican city state administration -- a key position that oversees, among other things, the Vatican's profit-making museums.
The non-Vatican officials include Cardinals Francisco Javier Errazuriz Ossa, the retired archbishop of Santiago, Chile; Oswald Gracias, archbishop of Mumbai, India; Reinhard Marx, archbishop of Munich and Freising, Germany; Laurent Monsengwo Pasinya, archbishop of Kinshasa, Congo; Sean Patrick O'Malley, the archbishop of Boston; George Pell, archbishop of Sydney, Australia; and Oscar Andrés Rodríguez Maradiaga, archbishop of Tegucigalpa, Honduras, who will serve as coordinator.


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Updates Provider hack
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Junior Member
Posts: 5
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Device: Kindle 3G + Wifi (US)
3.1 Screen Saver Hack Not Working for me
Hello Friends,
I am new to the forum and have joined because I am a little perplexed at this late (or early) hour. I followed these very simple instructions to the T and yet my screen savers are still not showing face.
I have also attached an image of what my kindle 3G + Wifi (US) file structure looks like after the jailbreak and screensaver hack install of version "update_jailbreak_0.7.N_k3g_install.bin" and "update_jailbreak_0.7.N_k3g_install.bin" Each little grey arrow on the left that is pointing down is an open folder (many of which are empty). I have 11 JPEG's in my screensaver folder but chose not to open it due to lack of space for the screen shot attached.
Prior to following the directions on the link above, I did not have any jailbreak or hack on the Kindle, just some .epub coverted to .mobi books
I appreciate any feedback and help I can get as I would absolutely love to see some fun pictures on the screen. PS - I am using a MAC (OS X 10.6.7)
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PlayStation 4 will retail for $399 this holiday season and will fully support the used game market as it currently exists. Plus, PS4's 'slanted' design looks pretty cool! Check it out right here.
Sony's E3 2013 Press Conference livestream kicks off at 5:30 PM Pacific Time. Watch right here and comment along with us!
Check out a trio of 'Diablo 3' PS3 trailers, along with new screenshots of the game and its interface. Currently announced for PS3 and PS4, 'Diablo 3' may yet appear on other consoles.
Wii U is starving for games, and third-parties aren't helping. 'Saints Row 4' and 'Dead Island: Riptide' are skipping the console, and 'Battlefield 4' might do the same.
February was another bad month at retail for Nintendo's Wii U. Microsoft's Xbox 360, on the other hand, enjoyed its 26th straight month as the best selling console in North America.
Nintendo is being asked to pay $30.2 million dollars in damages after a federal jury in New York concluded that 3DS's glasses-free 3D display infringes on a patent held by Tomita Technologies.
Mojang is launching a subscription-based service for PC & mobile 'Minecraft' players, dubbed 'Minecraft Realms.' Plus, the 'Xbox 360 Edition' scores a new Skin Pack and a retail release!
According to Wedbush Securities analyst Michael Pachter, 'If Nintendo's business is trying to make a profit,' then 'of course they should exit the hardware business.'
Read our review of Gioteck's FR-1 Freedom Racing Wheel for PlayStation 3 to find out if this compact, motion-controlled wheel delivers an immersive racing experience.
Wii U's sales have declined precipitously since the beginning of 2013, and Ubisoft thinks it might be time for a price cut. Instead, Nintendo is focused on exploiting the GamePad's NFC features.
Read our 'Metal Gear Rising: Revengeance' review to find out if the disparate sensibilities of Platinum Games and Kojima Productions deliver an action game worthy of the 'Metal Gear' pedigree.
Michel Ancel, creator of Rayman and Creative Director on 'Rayman Legends,' has shown solidarity with fans protesting Ubisoft's seven month delay of the former Wii U exclusive.
Ubisoft's decision to delay the Wii U version of 'Rayman Legends' has enraged fans and, apparently, one of the game's own developers. As a result, a new demo is on the way.
Today in next-gen news: PS4's release window and launch price, Xbox 720's voice recognition features, Ubisoft's praise for the upcoming systems, and GameStop's warning about consoles that don't play used games.
Rockstar claims that 'conspiracy theories' about the 'Grand Theft Auto 5' delay are 'nonsense,' including rumors that the game is bound for next-gen platforms.
Despite the fact that Nintendo's Wii U has been available for months, EA CEO John Riccitiello believes that the next console generation 'is yet to come.'
Sony has released an enigmatic trailer, dubbed 'See the Future,' that indicates something big is happening on February 20th. Is the PlayStation 4 about to be revealed?


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retro fitting CFL/LED bulbs as modeling bulbs
For years (and years) I have used studio strobes that use a tungsten/halogen bulbs in various forms. Recently I have moved from the traditional optical viewfinder in my Nikon DSLR to an OMD EM-1 with an EVF. Now if I set up my WB for Flash or a measured spec from the flash, while composing the shots I am seeing the images as very orange as one would expect from viewing tungsten light with the WB set to Flash. I didn't think this would be a big deal but it is becoming distracting. I know when I actually view the photos the balance will be correct and i suppose I could shoot in RAW (which I always do in the studio anyway) and just adjust my WB in post, but I'm not a fan of that either.
Basically I want my cake and to eat it too.
Since my lights use a standard household light bulb socket I am looking into using a daylight balanced CFL or LED bulb as a modeling bulb. My issue is that the bulb screws in directly in the middle of the flash tube so space is at a premium there and thus most CFL bulbs with their fat bases (containing the ballast) will be a no-go. I have found a 100 watt CREE daylight dimmable LED bulb at Home depot that may do the trick and I'm going to pick one up today to test fit. They are $20.00 but in a studio flash they will probably outlast the flash tubes :).
I would even be happy if I could find a standard incandescent bulb that had a daylight color temp but the only ones I know of that truly are daylight balanced (and the right size) are BBA quartz bulbs. I don't want to use them in my lights as they are 250 watt and they get very very hot. My lights don't have fans so I don't feel these would be a good option. I have tried out reveal bulbs just to see if they are noticeably closer to daylight but no go. They show very orange still.
Has anyone else tried to do this type of retro fit? I'm interested in what you have found that has (or hasn't worked).
Brandon Jackson
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Patent application title: Method of Integrating Epitaxial Film onto Assembly Substrate
Eric Ting-Shan Pan (Fremont, CA, US)
Eric Ting-Shan Pan (Fremont, CA, US)
IPC8 Class: AH01L21208FI
USPC Class:
Class name: Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) on insulating substrate or layer utilizing epitaxial lateral overgrowth
Publication date: 2010-04-29
Patent application number: 20100105194
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Patent application title: Method of Integrating Epitaxial Film onto Assembly Substrate
Eric Ting-Shan Pan
Law Office of J. Nicholas Gross, Prof. Corp.
Origin: BERKELEY, CA US
IPC8 Class: AH01L21208FI
USPC Class:
Patent application number: 20100105194
A method of growing an epitaxial film and transferring it to an assembly
substrate is disclosed. The film growth and transfer are made using an
epitaxy lateral overgrowth technique. The formed epitaxial film on an
assembly substrate can be further processed to form devices such as solar
cell, light emitting diode, and other devices and assembled into higher
integration of desired applications.
1. A method of forming an epitaxial thin film layer comprising the
steps:providing an assembly substrate comprised substantially of
non-semiconductor material including a plurality of openings;providing a
crystalline substrate having a surface region exposed within said
plurality of openings;introducing a liquid phase epitaxial (LPE) material
into said plurality of openings;controlling a temperature of said LPE
material so as to grow the thin film layer within said assembly substrate
on said surface region of said crystalline substrate.
2. The method of claim 1, wherein said thin film epitaxial layer can be grown laterally across a top surface of said assembly substrate.
3. The method of claim 1, further including a step: processing said assembly substrate and thin film epitaxial layer as an integrated epitaxial packaged structure within a semiconductor processing apparatus to form active devices on said assembly substrate and/or said thin film epitaxial layer.
4. The method of claim 1 wherein said thin film epitaxial layer includes a graded composition throughout a thickness direction of said assembly substrate.
5. The method of claim 1 wherein said liquid phase epitaxial material is adapted with thermal characteristics matching said assembly substrate.
6. The method of claim 1 wherein said crystalline substrate is detachable from said assembly substrate.
7. The method of claim 6, wherein said crystalline substrate is detached by a shearing action.
8. The method of claim 6, wherein said crystalline substrate is detached by a chemical etchant.
9. The method of claim 1 further including a step: forming one or more second separate thin film epitaxial layers on said thin film epitaxial layer.
10. The method of claim 1 further including a step: forming one or more second separate assembly substrates on said thin film epitaxial layer.
11. The method of claim 10 wherein said one or more second separate thin film epitaxial layers and said thin film epitaxial layer include different dopant species.
12. The method of claim 1 wherein said thin film epitaxial layer has a multidimensional structure including lines and via interconnects.
13. The method of claim 1, wherein said thin film epitaxial layer forms part of a p-n junction.
14. The method of claim 1, wherein said thin film epitaxial layer forms part of an integrated circuit device.
15. The method of claim 1 further including a step of forming a sacrificial layer attached between a bottom surface of said assembly substrate and said surface of said crystalline substrate.
16. The method of claim 1 further including a step of forming a spacer situated adjacent said assembly substrate and above said crystalline substrate.
17. The method of claim 1 further including a step: controlling heating and cooling of said liquid phase material.
18. The method of claim 6 wherein said crystalline substrate can be re-used after said epitaxial layer is separated for growing a second epitaxial layer.
19. The method of claim 1 further including a step: controlling a side profile of said openings to be vertical, step recessed or sloped to any desired angle.
20. A method of forming an epitaxial thin film comprising:providing an assembly substrate including a plurality of openings and defining a first pattern for an epitaxial layer;directing a liquid phase epitaxial material into said plurality of openings;maintaining a crystalline seed substrate in fixed contact with said assembly substrate for at least a first duration in which said liquid phase material is introduced into said plurality of openings;arranging said assembly substrate and said seed substrate such that epitaxial layer growth is initiated at a surface region of said seed substrate situated at a bottom of said plurality of openings and can be controlled until said epitaxial layer is formed within said first pattern.
21. A method of transferring an epitaxial thin film comprising:providing a first frame portion with a body adapted to hold an assembly substrate;wherein said assembly substrate includes a plurality of openings adapted to retain an epitaxial layer, and said plurality of openings extend from a top surface of said assembly substrate to a bottom surface thereof;providing a second base portion adapted to hold a seed substrate in fixed contact with said assembly substrate;wherein said seed substrate can be used for growing said epitaxial layer within said assembly substrate from a liquid phase epitaxial material, and such that said epitaxial layer contacts said seed substrate within said plurality of openings;controllably separating said first frame portion and said second base portion so as to cause a separation of said epitaxial layer from said seed substrate;wherein said epitaxial layer can be transferred as a distinct layer from said seed substrate.
22. A method of forming an epitaxial thin film comprising:melting a liquid phase epitaxial material within a pocket;directing said liquid phase epitaxial material onto an assembly substrate using a manifold;retaining said assembly substrate with a first frame portion;wherein said assembly substrate includes a plurality of openings;retaining a seed substrate adjacent to said assembly substrate such that said liquid phase material is introduced into a template within said assembly substrate and contacts a surface of said seed substrate through said plurality of openings;controlling melting and cooling of said liquid phase epitaxial material within said assembly substrate so as to form an epitaxial layer;controlling a temperature of said LPE while or before moving said first frame portion and/or said second base portion so as to separate said epitaxial layer from said seed substrate;wherein said epitaxial layer can be transferred as a distinct layer from said seed substrate.
23. A method of forming an epitaxial semiconductor structure comprising the steps:providing a solid substrate comprised substantially of non-semiconductor material including a plurality of openings forming a template for one or more epitaxial layers;forming a first thin film epitaxial layer situated within said plurality of openings and defining a multidimensional structure integrated within said solid substrate;forming a first semiconductor layer situated on said solid substrate and/or said first thin film epitaxial layer and defining one or more active devices;forming a second thin film epitaxial layer situated on and defining a p-n junction with said first thin film epitaxial layer.
24. A method of forming an epitaxial based integrated circuit comprising:forming a thin film epitaxial layer situated within a non-semiconductor template substrate having a top surface and bottom surface;forming one or more semiconductor layers situated on said top surface and/or said bottom surface of said thin film epitaxial layer and defining one or more active devices.
[0001]The present application claims the benefit under 35 U.S.C. 119(e) of the priority date of Provisional Application Ser. No. 61/109,147 filed Oct. 28, 2008 which is hereby incorporated by reference. The application also claims priority to and is a continuation-in-part of Ser. Nos. 12/417,931; 12/417,982; 12/418,020 and 12/418,223 also incorporated by reference. Finally the application is related to the following applications, all of which are filed on this same date and incorporated by reference herein:
[0002]Epitaxy-Level Packaging (ELP) System; Ser. No. ______(attorney docket number 2009-5)
[0003]Apparatus for Making Epitaxial Film Ser. No. ______(attorney docket number 2009-7)
[0004]The present invention relates to epitaxial layer growth and transfer using liquid phase epitaxy and particularly to such systems/methods that provide one or more epitaxial layers that are stackable and connectable for integration in monolithic devices, chip scale packaging, and multi-component modules.
[0005]An epitaxial layer is the engine of compound semiconductor device where its composition, dopant concentration, homostructure or heterostructure, and thickness determine a device's electrical, thermal, mechanical, and/or optical characteristics. Because of special material properties, compound semiconductors are critical to the success of many technologies that have demonstrated widespread applications in defense, space, and commercial sectors. These applications and devices include but not limited to optoelectronics such as lasers, sensors, optical data storage, fiber optics, light emitting diodes (LED), and photovoltaics (PV), radio frequency (RF) and wireless systems, and microwave, millimeter-wave, radar, and satellite communication systems.
[0006]The prior art layer transfer methods separate grown epitaxy layer(s) or finished device structure from a parent wafer substrate to a daughter substrate. The prior art process typically is practiced as follows: [0007]1) Deposit a backside contact and back surface reflector atop an inverted tandem structure which is grown on an etch stop layer over a first substrate. Mount the inverted tandem structure upside down on a second substrate. Remove the etch stop layer and thus the first substrate. Complete frontside processing of the tandem structure on the second substrate. [0008]2) Deposit some layers on the first substrate, and other layers on the second substrate. Polish and bond the two-layered substrates by annealing. Detach the second substrate by a hydrogen implantation, leaving the desired layer combination on the first substrate. [0009]3) Prepare a surface layer (surface conditioning) on a silicon substrate. Grow device layer on the surface treated layer. Attach a carrier to the device layer. Remove the surface layer and the silicon substrate. [0010]4) Build a semiconductor device layer on a first substrate. Provide a set of first functional elements to connect in the semiconductor device layer. Attach a carrier substrate on top of the first functional elements. Remove the first substrate to expose the bottom side of the semiconductor device layer producing a first intermediate structure. Build a set of second functional elements on a foundation substrate to produce a second intermediate structure. Bond the first and the second intermediate structures to form a third intermediate structure. Remove the carrier substrate. Provide input output means on the exposed surface of the first functional elements to form the integrated device structure. [0011]5) The epitaxial lift-off process allows the separation of a thin layer of compound semiconductor material from the substrate by strain-accelerated selective etching of an intermediate or sacrificial layer. Other means of removing the sacrificial layer in ELO include laser-assisted lift-off, ion bombardment. [0012]6) Fabricate device on etch stop layer (epitaxial surface) grown on a substrate. Mesa etch to etch stop layer and pattern separate devices. Remove substrate using selective wet etching. Bond the device onto a host substrate using a transfer diaphragm. [0013]7) Wax the top of the device. Lift-off in selective chemical etch of a sacrificial layer and removes the substrate. Attach the lift-off device to a glass substrate. Remove wax in chemical. [0014]8) Implant the device template substrate. Activate and clean the surface of the device template substrate and the handle substrate. Initiate the bond at room temperature. Apply uniform pressure and heat to the stacked wafers to strengthen the bond and initiate exfoliation.
[0015]These are just typical steps of course and are simplified here for instructive purposes. Some background references for this technology are identified below: [0016]T. Kochiyaa, et al., "Anisotropy of lateral growth rate in liquid phase epitaxy of InP and its association with kink-step structures on the surface," Applied Surface Science, 237, no. 1-4 (15 Oct. 2004): 235-241. [0017]A. E. Nikolaev, et al., "SiC liquid-phase epitaxy on patterned substrates," Journal of Crystal Growth, 166, no. 1-4 (1 Sep. 1996): 607-611. [0018]S. Sakai et al., "Selective Lateral Growth Mechanism of GaAs by Liquid-Phase Electroepitaxy," Japanese Journal of Applied Physics, 33 (1994): 23-27. [0019]K-W. Chung et al., "Lateral growth of GaAs over W by selective liquid phase epitaxy," Applied Physics Letters, 52 (1988): 1716. [0020]D. Dobosz et al., "Epitaxial lateral overgrowth of semiconductor structures by liquid phase epitaxy" International Journal of Materials and Product Technology, 22, no. 1/2/3 (2005): 50-63. [0021]Z. R. Zytkiewicz et al., "Recent progress in lateral overgrowth of semiconductor structures from the liquid phase," Crystal Research and Technology, 40, no. 4-5, (2005): 321-328. [0022]D. Dobosz et al., "Liquid phase growth and characterization of laterally overgrown GaSb epitaxial layers," Thin Solid Films, 412, (2002): 64. [0023]Y. C. Liua et al., "Computational analysis of lateral overgrowth of GaAs by liquid-phase epitaxy," Journal of Crystal Growth, 275, (2005): 953-957. [0024]Z. R. Zytkiewicz, "Epitaxial Lateral Overgrowth of GaAs: Principle and Growth Mechanism," Crystal Research and Technology, 34, 5-6, (1999): 573-582. [0025]M. Wanlass et al., "Monolithic, Ultra-Thin GaInP/GaAs/GaInAsTandem Solar Cells," NREL/PR-520-39852, Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) held May 7-12, 2006 in Waikoloa, Hi. [0026]M. S. Goorsky et al., "Engineered Layer Transfer Substrates for Heterogeneous Integration of III-V Compound Semiconductors," 2008 The International Conference on Compound Semiconductor Manufacturing Technology. [0027]R. Brendel, "Crystalline thin-film silicon solar cells from layer-transfer processes: a review," Proc. 10th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Aug. 13-16, 2000, Copper Mountain, USA. [0028]M. M. A. J. Voncken et al., "Etching AlAs with HF for Epitaxial Lift-Off Applications," Journal of the Electrochemical Society, 151, no 5 (2004): G347-G352. [0029]G. Roelkens et al., "Heterogeneous integration of III-V material and Silicon: fabrication and devices," Proceedings Symposium IEEE/LEOS Benelux Chapter, (2004): 83-86. [0030]N. M. Jokerst et al., "The Heterogeneous Integration of Optical Interconnections Into Integrated Microsystems," IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9, no. 2, MARCH/APRIL 2003. [0031]X. Y. Lee et al., "Thin Film GaAs Solar Cells on Glass Substrates by Epitaxial Liftoff," National renewable energy laboratory and sandia national laboratories photovoltaics program review meeting. AIP Conference Proceedings, 394, (1997): 719-727. [0032]M. J. Archer et al., "Materials Processes for Ultrahigh Efficiency Lattice Mismatched Multijunction Solar Cells," SPIE Optics+Photonics (2007): 6649-14. [0033]P. Muller et al., "Surface melting of nanoscopic epitaxial films," Surface Science, 529, no. 1-2, (2003): 59-94. [0034]J. J. Daniele, "Peltier-induced LPE and composition stabilization of GaAlAs," Applied Physics Letters, 27, no. 7, (1975): 373. [0035]J. J. Daniele et al., "Electroepitaxial (peltier-induced) liquid phase epitaxy, compositional stabilization and x-ray analysis of thick (120 μm) In1-xGaxP EPILAYERS ON (100) GaAs," Journal of Electronic Materials, 12, no. 6 (1983): 1015-1031. [0036]U.S. Pat. No. 4,464,211 Logan et al. [0037]U.S. Pat. No. 4,470,368 Reynolds, Jr. et al. [0038]U.S. Pat. No. 4,768,463 Yoshida et al. [0039]U.S. Pat. No. 4,186,045 Gatos et al. [0040]U.S. Pat. No. 5,391,236 Dmitri et al.
[0041]All of the above are incorporated by reference herein.
[0042]A number of fundamental barriers persist to mass production and commercialization of compound semiconductor devices namely: 1) material cost, 2) substrate size, and 3) component/sub-system integration. Despite the fact that the manufacturing cost of compound semiconductors has come down over time, it still remains much higher than silicon. Among the cost drivers, the cost of the crystalline substrate and epitaxial layer typically accounts for more than half of the finished wafer cost. Depending on the type of materials, crystal or substrate sizes also vary widely which raise challenges in tooling for wafer processing to make discrete devices or integrated circuits.
[0043]The other barrier is a lack of a technology platform (fabrication and integration platforms either monolithic or modular) versatile enough to intermix and integrate devices made from different materials for higher performance and/or functionality. Examples of needs for such an integration platform come from photonic integrated circuits in fiber optics, full spectrum utilization multijunction cells in photovoltaics, and transceiver in communication and radar systems.
[0044]Although epitaxy growth technologies have advanced with sophistications in equipment, epitaxy structure, and materials over the past decades, the manufacturing process of monolithically layering over crystalline substrate, wafer processing for device or integrated circuit (IC) formation, device/IC packaging, and board/module assembly has remained essentially the same.
[0045]Accordingly there is clearly a long-felt need for epitaxial systems and processes which are capable of addressing these deficiencies in the prior art.
[0046]An object of the present invention, therefore, is to overcome the aforementioned limitations of the prior art.
[0047]One aspect of the present invention concerns an assembly substrate that can be used to form a desired structure for an epitaxial layer;
[0048]Another aspect of the invention concerns an epitaxial structure that includes an assembly substrate and an integrated epitaxial thin film layer;
[0049]A further aspect of the invention concerns epitaxial layers and structures that can be freely separated from associated seed substrates, allowing for re-use of such substrates and ease of later processing for additional active devices;
[0050]Still another aspect concerns methods of making the aforementioned layers, structures, as well as electrically active regions (P-N junctions) and devices incorporating the same;
[0051]Another aspect concerns an apparatus that can be used to manufacture the above referenced epitaxial films, structures, etc.
[0052]It will be understood from the Detailed Description that the inventions can be implemented in a multitude of different embodiments. Furthermore, it will be readily appreciated by skilled artisans that such different embodiments will likely include only one or more of the aforementioned objects of the present inventions described herein. In particular, the present disclosure forms the basis of several distinct applications covering multiple separate inventions. Thus, the absence of one or more of such characteristics in any particular embodiment should not be construed as limiting the scope of the present inventions.
[0053]While described in the context of an epitaxial film for integrated circuit applications, it will be apparent to those skilled in the art that the present teachings could be used in any number of other systems in which it is desirable to improve an epitaxial packaging process.
[0054]FIG. 1 is a simplified diagram view of a preferred crystalline substrate, an assembly substrate, and a sacrificial layer or metamorphic buffer layer grown on a crystalline substrate as building blocks for layer growth and transfer in accordance with the teachings of the present invention;
[0055]FIG. 2 is a top view diagram of a preferred assembly substrate made in accordance with the teachings of the present invention;
[0056]FIG. 3 is an illustration of a preferred method of growing and transferring an epitaxy layer from a crystalline substrate to an assembly substrate by liquid phase epitaxy;
[0057]FIG. 4 is an illustrative diagram of various preferred forms of epitaxy layer at the completion of layer transfer;
[0058]FIG. 5 is a simplified diagram of the preferred growth of epitaxy layer by LPE.
[0059]FIG. 6 is an illustrative diagram of the preferred separation of the grown epitaxy layer on an assembly substrate from the crystalline substrate;
[0060]FIG. 7 is an illustrative diagram of various preferred device structures resulting from layer transfer and subsequent processing;
[0061]FIG. 8 is a simplified diagram of a preferred assembly substrate for layer growth and transfer of heterojunction, multijunction, or diode structure;
[0062]FIG. 9 is an illustrative diagram of two structures described in FIG. 1 and FIG. 8 that are brought into physical contact;
[0063]FIG. 10 is an illustrative diagram of the preferred growth of epitaxy layer on the combined structure in FIG. 9;
[0064]FIG. 11 is an illustrative diagram of the preferred preparatory steps before the separation of the sacrificial layer or buffer layer from the crystalline substrate or removal of the sacrificial layer;
[0065]FIG. 12 is a simplified diagram of the preferred epitaxy layer on the assembly substrate after the separation from the crystalline substrate;
[0066]FIG. 13 is a simplified diagram of the preferred formed device;
[0067]FIG. 14 is a top view diagram of FIG. 13.
[0068]The present invention addresses the aforementioned prior art barriers through a preferred simultaneous growth and transfer method of epitaxial structures from a semiconductor substrate to an assembly substrate. The method lowers the material cost by replacing a conventional semiconductor substrate with a lower-cost assembly substrate and further using a low-cost liquid phase epitaxy (LPE) manufacturing process.
[0069]Using the preferred method, the assembly substrate standardizes substrate size for further processing regardless of the original material sizes. The epitaxial layer transferred directly unto an assembly substrate provides a unit building block for higher level of device and subsystem integration. Unlike prior art layer transfer techniques, the present invention can preferably transfer an epitaxy layer during layer growth, which provides a number of benefits including low cost, high yield, high material quality, and wide applications.
[0070]LPE is a well-known method of growing a material epitaxially on a single-crystalline substrate of a specific crystalline orientation, lattice constant, and defect density. Typically this techniques uses a solution of the material to make contact to and grow a thin layer (10 nm to 100 um) over a substrate surface. The thin layer grows and replicates the crystalline structure of the substrate as in seeded crystal growth. The growth process preferably begins with a melt of the material solution (or growth solution) in an appropriate solvent at supersaturation that is maintained at an elevated temperature and a controlled gas pressure. When the melt is brought into contact with the substrate, materials at the contact interface are in thermodynamic equilibrium at a constant temperature. At a lower but a constant temperature, the material from the melt precipitates and grows epitaxially on the substrate of the same material (homojunction) until a layer of the desired thickness has been grown and the substrate is removed from the melt.
[0071]Both growth rate and material composition of the epitaxial layer can be controlled by temperature uniformity, responsive temperature profile, and gas pressure. In many applications, an impurity element (dopant) can be added to a crystal lattice in low concentrations in order to alter the optical/electrical/physical/chemical properties of the crystal material. Therefore, a dopant can be added into the melt and the doped layer can be grown on an undoped substrate. To grow a heterojunction, a multijunction, or a diode structure, it may be necessary to grow a sacrificial layer, a transition layer, or a metamorphic buffer layer of graded compositions and lattice constant on the crystalline substrate. The sacrificial layer or a transition layer may be removed from the crystalline substrate during or after the subsequent growth of epitaxy layer unto an assembly substrate.
[0072]An epitaxial lateral overgrowth (ELO) technique uses LPE for preventing defect propagation in forming multiple epitaxial layers (active layers) in microelectronic and optoelectronic devices. ELO is a process for growing an epitaxial layer on partially masked crystalline substrates. Typically, a buffer layer is grown first on the crystalline substrate. Then the crystalline substrate is covered by a thin film patterned with openings or windows by conventional photolithography. Finally, the epitaxial layer is grown inside the openings on the crystalline substrate. The epitaxial layer initially nucleates on the surface of the crystalline substrate and grows vertically from the crystalline substrate inside the masked openings. Once the layer growth reached the top of the mask film, lateral growth begins along the masked film surface.
[0073]Depending on the orientation of masked openings relative to the substrate crystal orientation, the ELO technique can provide a faster rate of growth for an epitaxial layer in the lateral direction over narrow openings in a mask layer (such as silicon oxide or metal nitride) deposited atop a substrate than the growth of epitaxial layer in the narrow openings in the vertical direction normal to the substrate surface. The result is typically a single epitaxial layer over the mask layer that is coalesced of lateral grown parts of the layers (wings) from adjacent openings.
[0074]Prior studies have shown that these ELO layers exhibit much lower dislocation density than that in standard planar epitaxial layers grown on the crystalline substrate. For example, on (100) GaAs substrates the line seeds aligned at 15°, 30°, 60°, or 75° off from the <011> direction show a large value of lateral to normal growth rate ratio. Other process parameters that may affect lateral growth of different materials include the growth temperature dependence of the normal growth rate and the lateral growth rate in different crystallographic direction, electric field through the growing layer, the amount of dopant introduced to the melt, the solubility of the dopant in the liquid solution, the spacing between windows, and physical properties of the growth solution such as viscosity as a function of temperature, fluid pressure, density, solute diffusion coefficient, etc.
[0075]Preferred embodiments of the present invention offer a transformational epitaxy-level packaging (ELP) technique that advances beyond chip-scale packaging (CSP) (where the resulting package is about the same size as the die), wafer-level packaging (WLP) (where the package of integrated circuit is at wafer level), and traditional package and assembly where the package of individual device is after wafer dicing. The preferred ELP of the present invention leverages the ELO process using LPE and provides a streamlined technique that can achieve high yield for epitaxial layer growth and layer transfer from a crystalline parent substrate directly unto an assembly daughter substrate.
[0076]The preferred embodiments of the invention can enable transformational material manufacturing and package integration for compound semiconductors with clear advantages in providing low cost, high yield, high quality materials, and wide applications over conventional methods. First, the preferred method can remove the traditional crystalline substrate of compound semiconductors to thus eliminate the cost of crystalline substrate in device. Furthermore, in most applications the crystalline substrate can be re-used.
[0077]In addition, preferred embodiments of the invention also save package and assembly costs at least in areas associated with wafer mount, wafer thinning, wafer dicing, and die attach. Second, preferred embodiments of the layer transfer process can be made high yield by liquid-solid phase separation or localized etch in smaller areas that minimizes or eliminates defect-prone separation between two sheets of solids. Lastly, the ELP growth of the preferred embodiment produces high quality films of near-perfect material quality that is suitable for wide device applications.
[0078]Differing from the prior-art layer transfer processes--which generally fabricate the sacrificial or separation layer and an inverted device structure on the first substrate, bond to the second substrate, and remove the sacrificial or separation layer--preferred embodiments of the present invention provide a direct growth and attachment of an epitaxy layer to the second substrate (assembly substrate). Preferred embodiments of the present invention also do not need to resort to fabrication of an inverted device structure in subsequent processing.
[0079]The preferred embodiments of the present invention streamline package and assembly steps by eliminating at least wafer mount, wafer thinning, wafer dicing, and die attach. These preferred embodiments provide a wafer level platform where islands of different epitaxy materials can intermix on the same planar substrate. The preferred layer transfer method of the present invention is easily integrable in liquid phase epitaxy equipment for high-throughput and high-yield production.
[0080]Three main components are used in preferred embodiments of the present invention. First, a preferred multi-compartment boat apparatus is used for crystalline substrate, assembly substrate, manifold's aperture, and source melt. Second, an assembly board is preferably made of materials that can withstand the thermal requirement of epitaxy growth and is suitable for end applications with patterned openings, slids, or windows and other interconnects or components for epitaxy lateral overgrowth and subsequent layer transfer. Third, a preferred layer transfer mechanism is used to separate a crystalline substrate and the assembly substrate during or after layer growth, and utilizes both multi-zone temperature control from melt to crystalline substrate and mechanical actions.
[0081]FIG. 1 shows some of the basic building blocks used in an epitaxy layer growth and transfer process. An upper graph (A) depicts a crystalline substrate 110 of any conventional semiconductor crystalline wafer. A surface 115 of a crystalline substrate provides a two-dimensional nucleation site for an epitaxy layer to replicate the lattice structure of the substrate for homojunction type growth. The crystalline substrate 110 in some cases may not be a whole crystalline substrate but rather multiple and localized nucleation sites on one substrate that match the openings of a patterned assembly substrate.
[0082]Middle graph (B) depicts a crystalline substrate with a sacrificial layer or a metamorphic buffer layer 120 grown atop it. The growth method for layer 120 can be of any conventional epitaxial growth method, such as MOCVD, LPE, VPE, MBE, MOVPE, etc.
[0083]A sacrificial layer 120 is preferably of different material composition from but lattice-matched to crystalline substrate 110. A metamorphic buffer layer 120 includes graded compositions and a lattice constant to the crystalline substrate. A sacrificial or a buffer layer 120 is preferably used for growing heterojunction, multijunction, or diode structures.
[0084]Sacrificial layer 120 may be removed in post-epitaxy growth to separate an assembly substrate from the crystalline substrate in case of transfer of an epitaxy layer having a large surface to volume ratio. Bottom graph (C) shows an assembly substrate 130 with patterned holes, slits, or windows 140 that are open through the thickness of the assembly substrate 130. A side profile of the holes, slits, or windows can be vertical or step recessed or sloped to any desired angle.
[0085]FIG. 2 is a top view diagrammatic of the assembly substrate 210 illustrating different patterns, shapes, spacings, and sizes for openings such as slits or windows 220 and holes or wells 230 for the initial epitaxial growth in direction vertical to the crystalline substrate surface and later epitaxial lateral overgrowth. The assembly substrate 210 is preferably made of a solid, rigid material and can be thought of as a template or stencil for a desired epitaxial layer geometry, structure and arrangement for an integrated circuit. The openings in the assembly substrate define a multidimensional pattern to be imparted to a thin film epitaxial layer. Accordingly the substrate is adapted to receive a liquid phase epitaxial material and has thermal characteristics sufficient to support growth of epitaxial material within the openings without causing damage to the substrate that would prevent it from being used in subsequent conventional semiconductor processing steps for making active devices.
[0086]This substrate 210 is thus preferably a single or multi-layered ceramic substrate that is thermally matched to the thin single-crystal epitaxial layer to be transferred onto or any substrate materials that has lower cost than the crystalline substrate and properties that fits specific product and application requirements. Accordingly other choices for materials for substrate 210 will be apparent to those skilled in the art from the present teachings. A significant advantage of growing epitaxy layers on assembly boards of the present invention is that the latter then can serve just like a conventional wafer for later processing steps. It can be subjected to wafer processing for device/IC formation. It can save significant operational steps and costs in wafer mount, wafer thinning, wafer dicing, and die attach.
[0087]FIGS. 3A-3B illustrate a novel method of growing and transferring an epitaxial layer from a crystalline substrate with or without a sacrificial layer or a buffer layer to an assembly substrate by liquid phase epitaxy (LPE). This mechanism generally employs a procedure by which an epitaxial apparatus 300 forms an epitaxial layer within an assembly substrate on top of a crystalline substrate, which is then heated sufficiently so that it can be "swiped" or mechanically sheared off the surface of the substrate.
[0088]In FIG. 3A a crystalline substrate 310 is preferably placed in a holder of apparatus 300, which preferably includes a platform (not shown) and a recessed base of a boat 320, which is preferably made of graphite or similar material. Graphite is a preferred material for material availability in high purity form, being easily machined, and being not wet by metals. An assembly substrate 330 is preferably enclosed by a barrel or frames 370 preferably comprised of graphite or similar material and placed atop crystalline substrate 310. It will be understood that other well-known mechanisms can be employed by apparatus 300 to secure the assembly substrate/template and effectuate the goals of the invention.
[0089]The LPE melt in a single or multiple melt pockets 350 preferably sits stationary and the resulting melt is directed unto the assembly substrate 330 preferably through aperture's 360 in a manifold 365 (preferably comprised of graphite or similar material) and then ultimately unto the surface of the crystalline substrate 310 through openings 340 in the assembly substrate. The form of LPE melt 350 can take any number of forms commonly known in the art.
[0090]The manifold 365 may have one or more additional apertures 360 (not shown) and other conventional control mechanisms for controlling the overall rate and amount of melt dispensed. For example the manifold may be movable within apparatus 300 to dispense the melt across the surface of the assembly substrate. The melt dispensation is selective of melt pockets, time controlled, volume controlled, temperature controlled, location specific through the arrangement of manifold, and either stationary or motion controlled, for example, sliding, rotational, in a scanning motion, or any other moving mechanisms. The manifold apertures thus define an aperture plate used by apparatus 300 to selectively control an area used for localizing the dispensing of the melt as well.
[0091]Other approaches are possible as well. For example the topology of the mechanism could be inverted so that the assembly substrate is flipped with the melt bath introduced into the bottom of the on the bottom of the boat 320. In some applications it may be possible to introduce the melt directly onto the crystalline substrate first, with the assembly substrate then physically pressed/superimposed on top of such melt so as to displace and force the bulk of the melt into openings 340 where it can begin to crystallize. Residual material on the bottom of the substrate could be removed by any number of conventional mechanisms without disturbing the resulting template in assembly substrate 330. The geometry/spatial relationship between the manifold 365 and assembly substrate 330 can be configured as well to optimize the distribution of the melt from chamber 350 to the desired openings 340. Accordingly other orientations are possible, and all that is required is that there be some reliable mechanism for introducing the melt in a manner that allows controlled growth at a substrate interface at the bottom of openings 340.
[0092]The zones where the crystalline substrate, the assembly substrate, and the melt situate are situated are each preferably temperature controlled. Initially, as seen FIG. 3A all three zones are preferably of the same temperature T1 at or slightly above the bulk melting temperature of the melt. Control of the temperatures in these areas to control the melt properties within apparatus 300 can be achieved by any number of well-known techniques. For example the entire assembly 300 may be maintained in a temperature controlled chamber of a furnace, a reactor, and/or conventional heat conduction and/or convection mechanisms may be employed to provide localized heat energy to these zones.
[0093]In FIG. 3B, an epitaxial layer 375 is formed when substrates 310 and 330 and the localized melt 380 are slowly cooled to an end temperature T2 corresponding to a super-cooling point for the particular melt. At this temperature segregation of solute from the melt results on the substrate, that is, the epitaxy layer 375 begins to grow. The entire layer is then solidified over some predetermined time in a direction extending from the bottom of openings 340 to a surface of the assembly substrate 330. The time and temperatures required will be a function of the thickness of the epitaxial layer, the compositions of the substrates, etc., and can be determined experimentally using routine skill. In any event, the end result of this process is a completed epitaxial layer formed within the substrate/template 330 having a desired geometry, structure, material and doping composition suitable for use in any conventional integrated circuit requiring such layers.
[0094]Apparatus 300 is further adapted so that preferably either or both the barrel or frame 365 or the crystalline substrate holder 320 or both can be physically moved with respect with one another. This allows for a swiping or shearing action that can be used to detach the completed epitaxial layer 375 from the underlying substrate 310 and allow it be integrated as part of an additional semiconductor circuit.
[0095]Thus, as seen in FIG. 3C, during or after the epitaxial layer growth, the crystalline substrate holder 320 temperature is preferably raised to a surface pre-melting temperature T3 just below a re-melting temperature of the bulk of epitaxial layer, which event causes epitaxial layer 375 to begin to pre-melt by lattice heating at the epitaxial layer-to-crystalline substrate interface, and in particular in the bottom of openings 340. It will be understood of course that other mechanisms for bringing about this pre-melt temperature can be employed, including by adding one or more heating elements embedded inside or as part of the crystalline substrate holder and even the assembly substrate barrel or frames, a heat lamp inside or under the crystalline substrate holder, or a RF induction heated system applied to the crystalline substrate holder. Alternatively, a meshed heating element made of resistance wires, a thin heating plate, a sheet of carbon nanotube, or a thin film of positive thermal coefficient ceramic placed on top of the crystalline substrate with openings for epitaxial growth unto the assembly substrate. Other examples will be apparent to those skilled in the art.
[0096]At the same time (or after some predetermined time based on measuring the pre-melt temperature, or some other time factor) apparatus 300 employs a mechanical action to move barrel 370 and crystalline substrate holder 320 from each other to separate the epitaxial layer from the surface of crystalline substrate. Mechanical actions may be swiping, sliding, rotation, spinning, pulling, tearing, vibration, stepping, breaking, cutting, or any combination (simultaneous or sequential) thereof. While a mechanical action serves to slide or shear the epitaxial layer 375 from the crystalline substrate 310, it will be apparent to those skilled in the art that other mechanisms may be used to separate the two materials. For example in many instances the surface area of the epitaxial layer is relatively small compared to the overall surface area so the amount of physical adhesion is relatively small. In such event it may not be necessary to employ any physical force to shear the interface, and, instead, it may be possible simply to gradually lift the assembly substrate 330 in a timed/controlled fashion (again using a mechanical arm/fingers not shown) to achieve the same result in a lift-off fashion.
[0097]At the completion of layer separation and transfer as illustrated in FIG. 3C, the temperatures of both the barrel and crystalline substrate holder are preferably lowered in apparatus 300 eventually to approximately an ambient or room temperature T4. More precise growth control may be accomplished in some instances within apparatus 300 by micro-heating and cooling elements in combination with or without a conventional Peltier-induced LPE in which an electric current (generated by electric field or induced by magnetic filed) is passed through the substrate-melt interface and heats and cools it by a well-known Peltier effect. The growth takes place at a constant temperature and growth rate is proportional to an applied current and/or applied field. Again other techniques can be employed with the present invention.
[0098]FIG. 4 shows various forms of epitaxial layers after completion of epitaxial layer growth and subsequent layer transfer from crystalline substrate 410 to an assembly substrate 430. FIG. 4A describes a discrete epitaxial layer in the openings of the assembly substrate, corresponding epitaxial lines of a desired width and configuration. FIG. 4B describes islands of a desired width and length forming an epitaxial layer on the assembly substrate. FIG. 4c describes a continuous epitaxial layer or film on the assembly substrate, again having a desired thickness.
[0099]FIG. 5 illustrates a growth of an epitaxial layer 575 by LPE in circumstances where there is an initial vertical growth 512 from a crystalline substrate 510 through the openings of an assembly substrate 530 and subsequent lateral overgrowth of islands 525 on the surface of the assembly substrate. These islands may continue to grow laterally and coalesce to form a single film 575, which may serve as the base for additional epitaxial layers to grow on top thereof in subsequent processing operations. It will be apparent from these illustrations that the thickness, size, geometry and orientation of the epitaxial structures (including islands, through-holes and lines) can be controlled and configured in any manner of desired topology based on the characteristics of the assembly substrate.
[0100]In other embodiments it may be desirable and/or feasible to control compositional variations within the epitaxial layer, such as by adding doping and/or structural gradients. To do this the melt composition could be varied by time so that at a first time a particular melt composition/doping is added, while at a subsequent time a different melt mix (with different composition/doping) is added. Again the process can be automated to create graded epitaxial layers of any desired chemical, physical and electrical properties as needed for any particular application. In other instances the assembly substrate could be used to assist in tailoring the epitaxial film characteristics, including by physical configurations and other variations for altering the film growth and/or composition.
[0101]FIG. 6 illustrates generally the separation of a grown epitaxial layer 675 on an assembly substrate 630 from a crystalline substrate 610. As noted earlier the separation may take place during epitaxial layer growth or after epitaxial layer growth by a combination of temperature and mechanical means as described in FIGS. 3A-3C.
[0102]FIGS. 7A-7D illustrate how the invention's techniques can be used to manufacture more complex epitaxial structures. These device structures include epitaxial layers 775 with additional processing steps and patterned layers 720. As is apparent from FIG. 7, the number of additional epitaxy layers, epitaxy islands or continuous epitaxy layers, post-epitaxy processing steps, device structures, device layout, dimensions, and patterns can be varied as desired for different products and applications. In particular the invention can be used for making devices which include:
(A) single junction(B) double junction or multi-junction (monolithic)(C) double junction or multi-junction (hybrid)(D) single junction, double junction or multi-junction within openings
[0103]In FIG. 7A a single junction or homojunction device can be formed with one continuous layer on the assembly substrate 730. An active region (e.g. p-n junction) 715 may be formed after the epitaxial layer completes an initial lateral overgrowth forming a continuous layer. Thereafter a p-n junction 715 may be grown using conventional processing techniques. In general the completed epitaxy-on-assembly substrate is advantageous because it can be used for post-epitaxy processing like any wafer fabrication for device and/or integrated circuit formation. The size and thickness of the assembly substrate can also be made to match that of any semiconductor wafer that fit into the wafer fabrication and handling.
[0104]In FIG. 7B a second continuous epitaxy layer 776 is manufactured on the surface of an underlying first epitaxial layer 775. Thus an epitaxial layer can be grown on an assembly substrate (instead of the crystalline substrate). In this manner the assembly substrate 730 can now serve as the base for double or multi-junction active layer formation monolithically through another LPE or even by any conventional epitaxy growth means.
[0105]FIG. 7C provides an alternate method to form double junction or multi-junction layers that is not purely monolithic but instead part of a hybrid package or a modular integration that may consist of stacking of multiple device assembly layers intermixed with multiple epitaxy layers and/or different localized pockets of epitaxy materials and devices of different functionalities. As seen therein, a first assembly substrate 730 containing a first epitaxial layer 775 is formed, followed by a second assembly substrate 730' containing a second epitaxial layer 776'. Again the composition and properties of the layers can be tailored as needed for any function.
[0106]FIG. 7D describes yet another scheme of forming single junction, double junction or multi-junction within the openings of an assembly substrate 730 such that discrete devices (shown as stacked layers of active devices 715 and epitaxial layers 775, 776) can be formed, assembled, and separated by cutting directly the assembly substrate in the area noted with a hash marks 780.
[0107]FIG. 8 is a simplified diagram of another embodiment of an assembly substrate 830, including other preferred novel features such as a mesh (and/or a patterned plate as shown in FIG. 2) 805, a patterned adhesion layer 825, cavities 835, and a plate 838 to cover cavities, prior to making contact to a crystalline substrate 810 with a sacrificial layer 820. Except where noted like reference numerals are intended to correspond with similarly referenced components identified above in prior figures. Thus the assembly substrate 830 can be of a one or multi-layered ceramic substrate that is thermally matched to the thin single-crystal epitaxial layer to be transferred onto or any substrate materials that has lower cost than the crystalline substrate and properties that fits specific product and application requirements.
[0108]The adhesion layer 825 can be of a metallic film, an organic film, or an adhesive tape. The adhesion layer may be necessary for cases when the epitaxy layer surface-to-volume ratio is large, the thickness of assembly substrate is much thicker that the epitaxy layer, or the epitaxy layer is grown and attached directly to the backside, the surface that contacts the epitaxy layer first during growth, of the assembly substrate.
[0109]The assembly substrate 830 can have patterned openings 870 and other devices or components previously formed. Epitaxial layer transfer may be accomplished through thermal and/or mechanical means as described in FIG. 3. The embodiment of FIGS. 8-13 uses an etchant to help detach the epitaxial layer, rather than primarily heat/mechanical means. In this instance of using an etch to accomplish layer transfer, cavities 835 are used for guiding etchant to remove sacrificial layer after epitaxial growth and the plate 838 is used to cover cavities 835 during epitaxial growth. Therefore the purpose of plate 838 is to prevent the introduction of material in these cavities during this deposition operation. Instead, as seen in FIG. 8, openings 870 are areas where epitaxial growth takes place. The patterned plate 805 may have special optical, electrical, mechanical and/or other properties that suit the device applications. For example, the plate may be of glass, acrylic, other transparent, beam collection, or beam steering media for the solar cell application.
[0110]FIG. 9 shows additional novel feature of a preferred spacer 901 when the epitaxy layer is to be grown and attached directly to the backside of a device, the surface that contacts the epitaxy layer first during growth, The contact on either side can be patterned, interlocked, or formed with a spacer 901 to open up the space for subsequent epitaxial film growth and required thickness. The spacer 901 may be deposited directly on the sacrificial layer or the crystalline substrate such as a patterned silicon nitride thin film or other materials of thin layer. The spacer may also be a patterned sheet or plate that makes physical contact to the surface of sacrificial layer or the crystalline substrate. The use of different types of spacers therefore can be used to configure/alter an epitaxial layer geometry and arrangement on an underlying substrate.
[0111]FIG. 10 is an illustrative diagram showing the preferred growth of epitaxial film 1075 on the crystalline substrate 1010 or on a sacrificial layer or buffer layer 1020 through the patterned openings of the assembly substrate. The crystalline substrate 1010 and the assembly substrate 1030 can be positioned in particular orientations to best fit the epitaxial growth apparatus and growth conditions. As with FIG. 8 a plate 1038 covers cavities 1035. Epitaxial lateral overgrowth (ELO) can be implemented by applying a heating element or mask placed on top of crystalline substrate 1010. Otherwise, ELO usually does not apply to growth directly on the crystalline substrate because the growth occurs in the vertical direction perpendicular to the surface of the crystalline substrate.
[0112]FIG. 11 is an illustrative diagram showing the later removal of plate 1138 covering cavities 1135 and spacer 1101. Sacrificial layer or buffer layer 1120 can be removed by a combined thermal and mechanical means as described previously in FIG. 3 or by other physical, chemical, ionic bombardment, thermal, mechanical, electromechanical, optical means, or a combination thereof. In a preferred approach using a chemical process, a selective etchant can be applied onto the sacrificial layer 1120 through the cavities 1135 and/or an edge portion 1150. The details of the etch chemistry recipe can be determined using routine skill based on the composition of an underlying substrate, sacrificial layer 1120, epitaxial film 1175, etc.
[0113]FIG. 12 is a simplified diagram of the completed epitaxial film 1275 as it may be employed on the backside of an assembly substrate as part of an electrically active region to be used with integrated circuits. The assembly can be further processed with additional epitaxy layers, processing steps, and patterned layers 1212 that may include metallization, thin film etching, film deposition, and/or encapsulation to form desired devices such as solar cell, light emitting diode, and other integrated circuits for a desired applications.
[0114]FIG. 13 is a simplified diagram of a completed device 1300 that is separated by means of saw, scribe and break, or chemical etch. The separated discrete device 1300 on assembly substrate 1330 can be further processed and/or assembled with final dimensions with additional components 1312. The assembled package can be further incorporated into a module or higher integration as desired.
[0115]FIG. 14 is a diagram of a top view of FIG. 13 illustrating some key constituents such as patterned assembly substrate 1430, components 1412 on assembly substrate 1430, epitaxial film 1475, and patterned layers or devices 1432 on the epitaxial film 1475.
[0116]Other examples will be apparent to those skilled in the art and it is expected that the particular components and configuration will vary substantially from application to application depending on performance requirements, cost constraints, etc. Moreover while certain current conventional examples of such components have been described, it will be understood that the present invention can be used with other variants, advances, etc. of such components which are not yet well known and/or undiscovered. For illustrative purposes the present diagrams and discussion is simplified and skilled artisans will appreciate that other components could be employed in deployed application.
[0117]Note that the size, shape and configuration of the components is merely illustrative, and no assumptions or limitations should be drawn from these specific depictions. Accordingly the present disclosure will be understood by skilled artisans to describe and enable a number of such variants as well.
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Patent applications by Eric Ting-Shan Pan, Fremont, CA US
Patent applications in class Utilizing epitaxial lateral overgrowth
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text:
GAINESVILLE - A South Carolina man has been sentenced to 14 years in federal prison after he was caught in a sex sting operation in Barrow County a year ago.
David Alan Wolf of Rock Hill, SC, was arrested in August 2012 on charges of enticing a minor to engage in sexual activity after he communicated on the internet with a person he believed to be a woman with an 8-year-old daughter. The woman turned out to be an undercover investigator and the child was fictitious.
"Thankfully, there was no eight-year-old, and law enforcement arrested him. Sexual predators have no place in our community and we will see to it that they are caught, prosecuted and punished," said United States Attorney Sally Quillian Yates in a press statement.
According to court testimony, the 63-year-old Wolf communicated for two weeks with the undercover agent, describing in detail his sexual fantasies and the sex acts he would perform on the child. On August 28, 2012, Wolf traveled from South Carolina to Barrow County, thinking he would meet the child. He was arrested by Barrow County authorities that same day.
U.S. District Judge William C. O'Kelley handed down the 14-year sentence in his Gainesville courtroom Tuesday. In addition, O'Kelley ordered Wolf to spend the remainder of his life after prison on supervised release. Wolf also must pay a $5,000 fine, and Wolf will be required to register as a sex offender when he is released from prison.


text:
Unicorn Shakeology
I think we have all seen the hype about the new Starbucks Unicorn Frapp and I am not going to lie. I fell victim and just had to try it. Ok, so a co-worker got one and I tasted it, I knew I couldn't commit myself to a full one, I'm at least a little bit realistic. Now I will say it was pretty, but definitely not all it lived up too. And trust me. I love unicorns.
But let's be honest, we all don't need that sugar bomb. Being pretty can only take you so far in life. (I'm looking at you Jessica Simpson)
So what if I told you, you can make a beautiful unicorn drink that is also good for you?
Pretty excited huh?
Because honestly, I think we all love unicorns and glitter.
Shakeology is already the unicorn of health shakes aiding in weight loss, boosting energy, curbing junk food cravings, improving digestion, reducing inflammation, and much much more so it's only fitting that we have a UNICORN Shakeology Recipe right?!
I thought so, so here it is loves.
Unicorn Shakeology
1 scoop vanilla Shakeology – divided into thirds
1/3 cup blackberries
1/3 cup pineapple (can also added a couple of pieces of mango)
1/3 cup strawberries
12oz coconut or almond milk – divided into thirds
Blend 1/3 scoop of Shakeology + fruit + milk + ice (to desired consistency) in blender.
Then pour each in your glass creating the layer effect and if you REALLY want, top with whipped cream and sprinkles to make it look pretty! ✨
So there you have it, a HEALTHY, GUILT FREE, and beautiful unicorn shake.
Need Shakeology? Order it HERE!


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Color Research Cake Box DVD+R 50-Pack and Color Research Movie/Music 48 Disc Carrying Case BundleItem#: C18-42003 CASE | Model#: C18-42026 Bundle
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Color Research Cake Box DVD+R 50-Pack Bundle Product Details
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The Programs are offered in:
- Executive MBA
- Post Graduate Diploma in financial Management (PGDFM)
- Post Graduate Diploma in Operations Management (PGDOM)
- Post Graduate Diploma in Marketing Management (PGDMM)
- Post Graduate Diploma in Human Resource Management (PGDHRM)
For Executive MBA:
Candidates should have a bachelor's degree in any discipline from a recognized University and must have a work experience of 3 years.
For PGDM:
Candidates should have a bachelor's degree in any discipline from a recognized University.
Selection Procedure:
Candidates will be selected based on short listed as per SIU and SIBM, Bangalore and personal Interview.
How to apply:
- The Application forms can be downloaded from the official website of Symbiosis Institute of Business Management.
- The Filled application form along with demand draft of Rs 1500/- in favor of "The Director SIBM Bangalore", payable ta Bangalore.
Important Dates:
Last date for the submission of application form is June 02, 2012.
Group Discussion & Interview will be held on June 16 & 17, 2012.
Contact Details:
Symbiosis Institute of Business Management,
#95/1, 95/2, Electronic City Phase I,
Hosur Road, Bangalore – 560100.
Tel,: 080 – 67139542.


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New patients should arrive at least 15 minutes before their scheduled appointments to complete all paperwork and bring their insurance cards, a government-issued photo ID, and lists of their medicines and prior operations. Co-pays and any outstanding balances are due at the time of each visit. Generally, operations or procedures will not take place during the first visit.


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Will the paint fit?Never ask that question again with the Freak. Instead, ask which insert you should use. Paint varies. So Smart Parts made a system that adapted to the paintball, not the other way around.
What size do you need?
Freak inserts are subjected to the same rigorous honing and hardcoat anodizing as all Smart Parts barrels. They are held to strict tolerances to make sure your .679 is just that, not smaller or larger.
Freak Insert .682 - only.
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Voter turnout Sunday set a new postwar low for Lower House elections, the government said Monday.
Turnout sank to 59.32 percent for single-seat constituencies and 59.31 percent for the proportional representation segment, according to the Internal Affairs and Communications Ministry. Both figures represent a drop of 9.96 points from the previous election in 2009.
The previous record low for a House of Representatives election was set in 1996, when turnout fell to 59.65 percent for single seats and 59.62 percent in proportional representation, forcing Socialist Prime Minister Tomiichi Murayama to be replaced by the Liberal Democratic Party's Ryutaro Hashimoto.
The number of early voters came to 12,039,570, down 13.91 percent from 2009, the ministry said.
The most notable surges in voting saw turnout reach the upper 60 percent range. This occurred in 2005, when postal privatization was the main issue, and in 2009, when the Democratic Party of Japan ousted the LDP, ending over half a century of nearly unbroken rule.


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'Batman v. Superman': Jesse Eisenberg on Lex Luthor's Jewish qualities
A self-described "inconsistent Jew," the actor dishes on how he became a bad guy in the widely anticipated film.
A self-described "inconsistent Jew," the actor dishes on how he became a bad guy in the widely anticipated film.
Actor Michael Zegen may be best known for playing Jewish gangster Bugsy Siegel on "Boardwalk Empire." Now, he's taking on a more physical challenge in a revival of Arthur Miller's "A View from the Bridge" on Broadway. More ▸
The late writer David Foster Wallace was not Jewish – but the first actor to portray him onscreen is. More ▸
Today in juicy Jewish casting news, Jason Segel and Jesse Eisenberg have been attached to "The End of the Tour," a film about David Foster Wallace, The Wrap reports. The twist here is that Segel, star of such heavy fare as "The Muppets," "How I Met Your Mother," and "Forgetting Sarah Marshall," will portray "Infinite… More ▸
Lately the "Now You See Me" actor has received lots of flak–from straight up "Jesse Eisenberg made female reporter cry" type headlines to more creative entries, such as Gawker's "Dick or Not a Dick: Jesse Eisenberg." What's the deal? We decided to put our analyst hats on and take a deeper look into this (admittedly… More ▸
It's been a rough summer for NBC, mostly since the most common word following the peacock network letters was the word "fail" — because of its highly criticized Olympics coverage. But the icing on the failcake may have happened Sunday morning, when NBC cameras focused on one of the spectators and announcer Bob Fitzgerald declared, "I know… More ▸
Actor Jesse Eisenberg has written a play that revolves around the Holocaust. More ▸
Two of Hollywood's biggest nebbishes take the screen this summer when Woody Allen and Jesse Eisenberg team up for Woody Allen's latest movie, "To Rome With Love." If you've missed Allen's neurotic humor and perfect comedic timing, worry no more: This film features not only Allen himself (his first appearance in a movie since 2006)… More ▸
Each week, 6 Degrees No Bacon, the Jewish celebrity blog, brings you the Weekly Sizzle, the six most interesting Jewish celebrity stories featuring commentary from our devoted correspondents. This week's stories: 1. Beastie Boys inducted into Rock n' Roll Hall of Fame 2. Claire Danes calls Tel Aviv 'most intense party town' 3. Jesse Eisenberg says Judaism made him… More ▸
Not trying to take all the credit for Hollywood or anything, but Judaism basically breeds good actors. Jesse Eisenberg's words, not mine. In an essay in Black Book magazine, Eisenberg extolls the positive impact that a loud, Jewish background had on his acting chops: "In my family, every conversation was a debate complete with philosophical… More ▸
OpinionWe have seen the future, and it looks Orthodox
AnalysisWhy Trump's UN speech thrilled Netanyahu — for the moment, anyway


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Except for July, August, and December, we meet on the third Sunday of each month from 12:00 p.m. to 4pm at ConneXion in Jack London Plaza at 520 3rd Street (View map). Our location is a 13-minute walk from City Center BART, and there is free street parking on the street plus we are very near the garage by the movie theater. The entrance on Fourth street is ADA accessible.
Our meetings always include a speaker program featuring writers, editors, teachers, publishers, and agents to speak about writing and publishing. We also highlight a club member each month… this could be YOU!
These meetings are open to the public, and offer all writers the socializing, book sales, and writer support groups that we need to succeed—plus refreshments! There is a $10 charge for non-members, and it's only $5 for members.
The December meeting is our holiday luncheon at a venue to be announced and typically on the first Saturday. Check the calendar for details later in the year.
Please view our calendar page for information on meetings and events.
Meeting Volunteers!
Please contact a board member about volunteering at a meeting.


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Attorney Leonard Weinglass speaks in Detroit. Five men whose convictions have been overturned by a federal court remain imprisoned, internationally renowned human rights lawyer Leonard Weinglass told a public forum this weekend in Detroit.
The conditions of the arrest and imprisonment of the five men were so egregious, says the UN Working Group on Arbitrary Arrest and Detention that they "violate international norms of lawful detention." This isn't a case of injustice to be found in dictator-run Pakistan, authoritarian Burma, or religious fundamentalist dominated Sudan. It is right here in the US.
Weinglass spoke at a forum organized by the Michigan Campaign to Free the Cuban Five. The host committee included Bishop Thomas Gumbleton, Father John Nowlan, Reverend Ed Rowe, Judge Claudia Morcom, former Detroit City Council President Maryann Mahaffey, Detroit City Council member JoAnn Watson, and many local labor and community leaders and activists.
The men, convicted on charges of conspiracy to commit espionage, are five Cuban men sent to Miami to infiltrate and report to the Cuban government on the activities of terrorist groups based in Miami who have openly planned attacks on the tourism industry in Cuba, according to Weinglass who represents one of the men.
The men were tried in a Miami court under conditions later found by a three-judge panel on the federal 11th Circuit Court of Appeals to be a "perfect storm of prejudice" that prevented their receiving a fair trial. Last August, the three judges released a 93-page decision overturning the convictions of the men and agreeing with defense arguments that the men did not receive a fair trial.
Jurors who convicted the men openly admitted their anti-Cuban hostility that prejudiced their views about the men. Several had strong ties to the federal government and its agencies. "It was an impossible situation," Weinglass said.
Weinglass represents Antonio Guerrero who was convicted on conspiracy charges. Weinglass pointed out that none of the men have been convicted for stealing US government, military, or industrial secrets. In fact, by its own admission, the government's case against Guerrero, Gerardo Hernández, Ramón Labañino, Fernando González and René González, was based only on convincing a biased jury that the men intended at some point in time to spy on the US. With the help of a prejudicial instruction by the judge, the jury easily convicted the men.
According to Weinglass, the judge's instructions were so favorable to the prosecution that the even the government lawyers handling the case fought them. Weinglass said that the prosecutor's believed the instructions might be grounds for overturning the convictions in the future, so they appealed to a higher court to prevent the judge from giving the instructions. That higher court, the 11th Circuit Court, refused to intervene.
So what is the nature of the "crime" committed by these five men?
The background of the case begins in the early 1990s after the collapse of the Soviet Union, which, because Cuba relied on aid from the USSR, nearly caused the collapse of that island country's economy. Combined by with a tightened economic blockade imposed by the first Bush administration with the view of bringing down Cuba's government, the economic picture was bleak.
To reverse the trend, Cuba developed a tourism industry. Forging deals with European construction companies to build five-star hotels near Cuba's spectacular beaches, the Cuban government actions soon revived the ailing economy. Jobs and income quickly boosted prospects.
Needless to say, the new developments angered and frustrated the Cuban exile community based in Miami, which has sought to overthrow the Cuban government since 1959. Since that time, this wealthy community, which controlled Cuba's banking industry under the former brutal dictator Juan Batista and stole $450 million when it left the country, used it privilege in Miami to dominate that city's political machine and local media.
Only under a threat of violence can anyone publicly use their right of free speech to support Cuba in Miami. Pro-Cuban organizations are harassed and outlawed. Organizations, individuals, and even non-political businesses or entities that might wish to present Cuba in any positive light are threatened or shut down.
Former members of the Batista regime and his family have strong ties to the Bush family and to the Jeb Bush administration in Tallahassee. By all accounts the wealthy exile community has disproportionate political influence in US politics through its power in Florida. Disputed election results in Florida in 2000 were deeply tied to the exile community's influence in Tallahassee and in Washington.
Organizations with ominous sounding names like Brothers to the Rescue and Commandos F4 based in Miami and funded by groups like the Cuban American National Foundation and individuals with financial ties to the US-funded Nicaraguan rebel group known as the Contras decided to step up their attacks on Cuba.
On television stations and other media based in Miami, these groups publicly announced their intention to target Cuba's tourism industry with terrorist attacks. Bombs were found on flights to Cuba and in facilities associated with Cuban tourism. A bomb exploded in a Cuban hotel, killing one Italian tourist. One group organized illegal overflights into Cuban airspace to harass the Cuban government and threaten the tourist industry.
Numerous Cuban government protests to the US government about these illegal activities fell on deaf ears. Cuban protests to the UN Security Council, on which the US government holds veto power, went unheard.
In a final effort to enlist US law enforcement agency aid in stopping these activities, which are prohibited by international and US law, the Cuban government compiled a mountain of evidence on these attacks and information about the Miami-based groups that had conducted them and presented it to the FBI in a special meeting with US officials in Havana.
Films of training exercises made by the organizations themselves and obtained by the Cuban government were copied and turned over to the FBI. Weinglass, who has also viewed the films, noted that they "were very reminiscent of the films made of the camps in Afghanistan where Al Qaeda was purported to have trained."
Instead of enforcing US law and stopping the activities of these organizations, the FBI sat on its hands.
In a desperate situation, Weinglass said, "Cuba had no alternative but to take steps to defend itself." In 1998 the five men were sent to Miami. Without weapons of any kind, the five men volunteered to infiltrate the organizations that openly carried out terrorist attacks on Cuba. At great risk to their own lives and freedom, they succeeded.
In an ironic twist, the FBI soon learned that Cuba had inside knowledge about planned terrorist activities. Using the reports and evidence compiled and given to them by the Cuban government, the FBI tracked down the five men, obtained secret warrants from a FISA court, and secretly broke into and searched their homes. Downloading reports and information from their computers, the FBI learned that the five men had been successful in their efforts.
Soon after, the five men were arrested and indicted. Seven months after the initial indictment, one of the men, Gerardo Hernandez was also indicted on charges of conspiracy to commit murder.
According to Weinglass, the new charges stemmed from the fact that Hernandez had reported on illegal overflights of Cuba out of Miami, two of which were shot down by the Cuban airforce. Weinglass points out that these charges, too, are incredible due to the fact that the Federal Aviation Administration had reported specific information to the Cuban government about the illegal flights that were shot down
Cuba has described the shootdowns as part of its legal obligation to protect its airspace, an act that every country has the right to under international law. US prosecutors have admitted that they know Hernandez was not involved in the specific instances of shooting down the flights, but that his "crime" is one of having conspired to be involved at some future time.
Despite having these convictions overturned, the five men remain in federal prisons. After the three-judge panel documented massive prejudice that prevented the five men from receiving a fair trial, the US prosecutors, under orders from Attorney General Alberto Gonzales, appealed the decision. The five men continue to wait for justice and to be returned to their families in Cuba.
Weinglass concluded, "It is a remarkable case in what it reveals about justice in the US and between the US and Cuba."
The forum at which Weinglass spoke came on the heels of the passage of a Detroit City Council resolution that calls for freedom for the five men, an end to the US economic blockade of Cuba, and the restoration of the right to travel to and trade with Cuba. The resolution also called for the extradition of Posada Carriles, a Cuban exile who is known by federal authorities to have planned and carried out the 1976 bombing of a Cuban airliner that killed 76 people. Carriles is currently in US protective custody and has strong connections to the Bush family.
Find out more about this case at: www.freethefive.org
–Joel Wendland is managing editor of Political Affairs and can be reached at email@example.com.


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i have REALLY big eyes, they balj out of my socket, can i have fat injected in my upper cheeks so that that whole area is flat and if there is any bump just under the eye it should very be minimal $only show when i smile. thankyou
Will Fat Injected Under Eyes Help with Bulging Appearance?
Doctor Answers 4
Bulging eye
As many of my collegues have commented, this may be due to high thyorid hormone levels. You need to have this checked out. There are two options. The first one involves removing fat from and around your eye globe.This is fat inside your socket where your globe is resting. The other would be judicious use of fat to smoothen the transition from lower lid to cheek area.
Fat grafting to the Cheek below the Eyes
I agree with both my colleagues. The reason for bulging eyes may be anatomical (smaller than normal eye socket) or medical. Processes such as hyperthyroidism (or taking too much thyroid hormone) can be associated with increase of the size of the eyeball muscles resulting in it being pushed forward. This condition may be fixable by controlling the thyroid hormone levels.
The Tear Trough / Nasojugal line / lower lid-cheek junction can be augmented with Restylane or fat. The good thing about fat is that it is permanent. One of the bad things about fat is that it is permanent. If you do not like the result - you are still stuck with it. For this reason it may be better to see how you may like the look by using Restylane first in this location. If you like it, great. Once the Restylane goes away 8-12 months you can have your fat grafting. If you do not like the look, the Restylane can either be dissolved by the doctor or you can wait for it to wear off.
Try a filler to tear trough and lower eyelid bulge prior to undergoing fat injection
It is possible that fat may soften the appearance of the lower eyelid bulges by providing a gentle transition to the cheek fat making them seem flush with the cheeks rather than a discreet bulge. Prior to injectiing fat, I would suggest a hyaluronic filler to determine if you like the result of this intervention. If you do, then fat may be a long term option and if you don't it will dissipate with few if any side effects.
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Bulging eyes
AFter you have a general check up to make sure your thyroid levels are ok, you can see a plastic or oculoplastic surgeon to discuss the best treatment. You have a good thought, and some filler judiciously can blunt the angle a little between the cheek and lower eyelid, but if you make it smooth, you would look unnaturally full in that area.
These answers are for educational purposes and should not be relied upon as a substitute for medical advice you may receive from your physician. If you have a medical emergency, please call 911. These answers do not constitute or initiate a patient/doctor relationship.


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RECIPES: Recipe Details
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Great Lakes Burger
Burgers! The Great American get together staple. With all the hype for eating healthier, the Great Lakes Burger combines the traditional taste of burger with the health benefits of fish. The Great Lakes Burger is sure to become a family tradition.
1 lbs. ground chuck
1 lbs. canned salmon (home made is best)
1 cup italian bread crumbs
2 eggs
*1/4 cup sweet onions (optional)
lemon juice from one lemon
Mix together ground chuck, canned salmon, bread crumbs, eggs, and onions. Pat out into hamburger paties. Grill hamburgers until desired doneness. Brush top of burgers with lemon juice and again when burgers are flipped over.
Yum! Yum! Serveon whole wheat buns with mayonaise, leaf lettuce, and fresh home grown tomatoes.