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|Número de publicación
|Tipo de publicación
|Número de solicitud
|Fecha de publicación
|25 Dic 2003
|Fecha de presentación
|4 Mar 2003
|Fecha de prioridad
|5 Mar 2002
|También publicado como
|Número de publicación
|Ivo Raaijmakers, Pekka Soininen, Jan Maes
|Cesionario original
|Ivo Raaijmakers, Soininen Pekka J., Maes Jan Willem
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|BiBTeX, EndNote, RefMan
|Citas de patentes (5), Citada por (39), Clasificaciones (14), Eventos legales (3)
|Enlaces externos: USPTO, Cesión de USPTO, Espacenet
[0001] The present application claims the priority benefit under 35 U.S.C. §119(e) to U.S. provisional application No. 60/362,249, filed Mar. 5, 2002.
[0002] The present invention relates generally to the manufacturing of integrated circuits, and more particularly to the preparation of high-k dielectric layers in integrated circuits.
[0003] Process control is very important in the fabrication of ultra-large scale integrated circuits. Through a series of deposition, doping, photolithography and etch steps, the starting substrate and subsequent layers are converted into integrated circuits, with a single substrate producing from tens to thousands or even millions of integrated devices, depending on the size of the wafer and the complexity of the circuits.
[0004] One area in which process control is particularly critical is the fabrication of transistor gate dielectrics. In the pursuit of ever faster and more efficient circuits, semiconductor designs are continually scaled down with each product generation. Transistor switching time plays a large role in the pursuit of faster circuit operation. Switching time, in turn, can be reduced by reducing the channel length of the transistors. In order to realize maximum improvements in transistor performance, vertical dimensions should be scaled along with horizontal dimensions. Accordingly, effective gate dielectric thickness, junction depth, etc. will all decrease with future generation integrated circuits.
[0005] High quality, thin dielectric layers are also desirable for memory cell capacitors. Integrated capacitors in memory arrays must exhibit a certain minimum capacitance for proper data storage and retrieval. As the chip area or "footprint" available per memory cell shrinks with each progressive generation of integrated circuits, the required capacitance per unit of footprint has increased. Many complex folding structures have been proposed for increasing capacitance through increased capacitor electrode surface area for a given cell footprint. Often, these structures require extremely complex fabrication steps, increasing the cost of processing significantly. Accordingly, other efforts to increase capacitance for a given memory cell space have focused on the capacitor dielectric, since reducing the thickness of the dielectric also increases overall capacitance.
[0006] Conventional thin dielectrics are formed of high quality silicon dioxide, also referred to herein as "silicon oxide." Ultra-thin silicon oxide layers (e.g., less than 5 nm), however, have been found to exhibit high defect densities, including pinholes, charge trapping states and, in transistor applications, susceptibility to hot carrier injection effects. Such high defect densities lead to leakage currents through the dielectric and rapid device breakdown unacceptable for circuit designs with less than 0.25 μm gate spacing, i.e., sub-quarter-micron technology. Moreover, even if the integrity of the silicon oxide is perfectly maintained, quantum-mechanical effects set fundamental limits on the scaling of silicon oxide. At high fields, direct tunneling dominates over Fowler-Nordheim tunneling and largely determines silicon oxide scaling limits. For example, in transistor gate dielectrics, these scaling limits have been estimated at about 2 nm for logic circuits, and about 3 nm for more leakage-sensitive memory arrays in dynamic random access memory (DRAM) circuits. See, e.g., Hu et al., "Thin Gate Oxides Promise High Reliability," SEMICONDUCTOR INTERNATIONAL (July 1998), pp. 215-222.
[0007] Theoretically, incorporating materials of higher dielectric constant into the dielectric opens the door to further device scaling. Higher dielectric constants (k) allow materials currently under investigation to exhibit the same capacitance as a thinner silicon dioxide layer, such that a lower equivalent oxide thickness (EOT) can be achieved without tunnel-limited behavior.
[0008] Silicon nitride has been investigated for its higher k value and diffusion barrier properties. However, silicon nitride has been found to exhibit a higher density of defects, such as interface trapping states, as compared to oxides. One solution to the individual shortcomings of oxides and nitrides is to produce a hybrid layer. Incorporating nitrogen into silicon oxide, to form silicon oxynitride, provides improved gate dielectrics. See, e.g., Leonarduzzi & Kwong, "improving Performance with Oxynitride Gate Dielectrics," SEMICONDUCTOR INTERNATIONAL (July 1998), pp. 225-230. Similarly, forming silicon nitride over thin silicon oxide layers, has been found to reduce defect densities while considerably lowering overall gate dielectric equivalent oxide thickness. See, e.g., Kim et al., "Ultra Thin (<3 nm) High Quality Nitride/Oxide Stack Gate Dielectrics Fabricated by In-Situ Rapid Thermal Processing," IEDM 97 (1997), pp. 463-466. The benefits of gate dielectrics made from silicon nitride are limited, however, because of the marginal increase in dielectric constant afforded by silicon nitride, particularly when used in conjunction with silicon oxide.
[0009] Accordingly, other efforts to increase capacitance have focused on materials with significantly higher dielectric constants (high-k materials). Certain metal oxides, such as barium strontium titanate (BST), strontium bismuth tantalate (SBT), hafnium oxide (HfO2), zirconium oxide (ZrO2) tantalum oxide (Ta2O5), etc., exhibit high relative permittivity (dielectric constant or k values) and are thus promising for fabricating gate dielectrics with increased capacitances. Several factors have limited the integration of such materials into current process flows, including the relative instability of high-k materials, a tendency to exhibit high defect densities, leakage currents, and the difficulty of avoiding oxidation of surrounding materials during high-k dielectric deposition and annealing.
[0010] To avoid problems with oxidation of surrounding materials, known techniques have focused on extremely complex integration techniques, the use of noble, non-oxidizing, or conductive oxide materials for electrodes and diffusion barriers in the process sequence. For example, such techniques are disclosed in U.S. Pat. No. 5,392,189; No. 5,619,393; No. 5,633,781; and No. 6,265,740 B1. Amorphous dielectric materials can decrease the leakage current, but the effective thickness of the insulating layer increases due to lower dielectric constants amorphous materials. Other references disclose the use of amorphous materials between grains of higher dielectric constant crystals. See, e.g., U.S. Pat. No. 4,464,701; No. 6,014,610; and No. 5,617,290. Relatively complex process flows, however, are required to achieve such structures, and the overall dielectric constant of multiple-layer dielectric structures dilutes the effect of the high-k materials.
[0011] A need exists, therefore, for more effective methods of forming high quality dielectric layers.
[0012] In accordance with one aspect of the invention, a process is provided for forming a thin dielectric film in an integrated circuit. The process includes forming a discontinuous layer of high dielectric constant material directly over a conductor. The discontinuous layer is formed with gaps. The conductor and discontinuous layer are then annealed in the presence of a reactive source chemical, thereby preferentially converting portions of the conductor exposed in the gaps to a second insulating material.
[0013] In accordance with another aspect of the invention, a method is provided for forming a high-k dielectric thin film over a conductor in an integrated circuit. The method includes depositing a high-k dielectric film directly over a conductive structure, the high-k dielectric film having a bulk dielectric constant k and a thickness of no more than about 1.5×(k/4) nm. The high-k dielectric film is annealed in a reactive atmosphere to form a layer of second dielectric material below the high-k dielectric film. The layer of second dielectric material has a nonuniform thickness.
[0014] In accordance with another aspect of the invention, an ultrathin, continuous and uniform dielectric is formed to a thickness of less than about 2 nm. A discontinuous layer of high-k dielectric material is formed on top of the continuous dielectric. The overall dielectric structure has a reduced areal average of the leakage current. In a preferred embodiment, the underlying dielectric is silicon oxide of less than about 0.5 nm thickness.
[0015] In accordance with another aspect of the invention, a method of forming an integrated circuit includes providing a conductive surface and forming a discontinuous, high dielectric constant layer on the conductive surface. Potential current leakage paths in physical gaps of the discontinuous, high dielectric constant layer are blocked with a second insulating material.
[0016] In accordance with another aspect of the invention, an integrated circuit is provided. The circuit includes a conductive structure with a discontinuous high-k dielectric layer directly overlying the conductive structure. The high-k dielectric layer includes a plurality of crystalline grains and a plurality of gaps among the grains.
[0017] These and further aspects of the invention will be readily apparent to the skilled artisan from the following description and the attached drawings, wherein:
[0018]FIG. 1 is a flowchart generally illustrating a process in accordance with the preferred embodiments.
[0019]FIGS. 2A and 2B are schematic sectional views of a metal oxide over a semiconductor substrate, constructed in accordance with a preferred embodiment of the invention.
[0020]FIGS. 3A and 3B are schematic sectional views of the structure of FIGS. 2A and 2B after an annealing step in accordance with a preferred embodiment.
[0021]FIGS. 4A and 4B are schematic sectional views of the structure of FIGS. 2A and 2B after depositing a second dielectric layer over the metal oxide, in accordance with another embodiment.
[0022]FIGS. 5A and 5B are schematic sectional views of a discontinuous metal oxide over a semiconductor substrate, in accordance with another embodiment.
[0023]FIG. 6 illustrates experimental results of subjecting a dielectric stack of 4 nm Al2O3 over 0.5 nm silicon oxide to annealing, showing equivalent oxide thickness versus anneal temperature after annealing under various conditions.
[0024]FIG. 7 illustrates experimental results of subjecting a dielectric stack of 4 nm HfO2 over 0.5 nm silicon oxide to annealing, showing equivalent oxide thickness versus anneal temperature after annealing under various conditions.
[0025]FIG. 8 is a capacitance-voltage curve showing electrical behavior (and consequently calculated equivalent oxide thickness) after annealing a dielectric stack of 4 nm HfO2 over 0.5 nm silicon oxide with two different concentrations of O2.
[0026]FIG. 9 is a capacitance-voltage curve showing electrical behavior (and consequently calculated equivalent oxide thickness) after annealing a dielectric stack of 4 nm HfO2 over 0.5 nm silicon oxide in NH3 at two different temperatures.
[0027] While illustrated in the context of forming a dielectric material over a silicon conductive structure, the skilled artisan will readily appreciate the application of the principles and advantages disclosed herein to deposition over other conductors that are subject to oxidation. For example, and without limitation, the dielectric layer formation processes and structures disclosed herein are applicable to deposition over tantalum, tungsten, titanium, aluminum, etc. The conductor preferably oxidizes to form an amorphous dielectric. The skilled artisan will readily appreciate that the processes and structures disclosed herein are applicable to various contexts in which high dielectric constant materials are useful, including transistor gate stacks as well as memory cell capacitors for random access memory arrays.
[0028] As is known in the art, high dielectric constant materials (high-k materials) are typically annealed at high temperatures to crystallize the materials and to increase their dielectric constants. Typically, the anneal is conducted in a highly oxidizing environment to avoid reduction of oxygen content from the high-k layer. The highly oxidizing environment and high temperatures typically employed in such oxidation anneal steps tend to cause a high degree of oxygen diffusion through the layer. Conventional processes for integrating high-k materials, therefore, tend to focus on choices of surrounding materials and process sequences that avoid oxidation of underlying materials during the anneal.
[0029] While the higher dielectric constants of crystalline materials are advantageous, the formation of grain boundaries in the dielectric may increase the leakage current during device operation since charge carriers tend to migrate through the dielectric along grain-boundary surfaces when a voltage is applied over the dielectric. Using amorphous materials instead of crystalline can reduce leakage currents, but at the cost of a lower dielectric constant.
[0030] In accordance with the preferred embodiments, the advantages of crystalline high-k materials are balanced with the advantages of amorphous materials with lower dielectric constants, but with decreased leakage currents. The electrical conductivity through grain boundaries is advantageously reduced by forming insulating areas on an underlying conductor (e.g., silicon) that is located beneath the high-k thin film. Exposed portions of the conductor under the grain boundaries are preferably oxidized or nitridized in the presence of an oxygen-containing or nitrogen-containing source at elevated temperatures. Thus, oxidation or nitridation of the underlying conductor preferentially occurs between grains of the high-k material. The interface between high-k material grains and the underlying conductor, particularly silicon, is not as greatly affected by the oxidation process, which is carefully selected to avoid excessive oxidation beneath the grain boundaries. Overall, the dielectric constant of the high-k film remains relatively high, while leakage current through the dielectric is reduced by "plugging" the leakage paths between the grains.
[0031] The high-k dielectric material can be formed by any suitable process including physical vapor deposition (PVD), chemical vapor deposition (CVD), or atomic layer deposition (ALD). The high-k dielectric material is initially an ultrathin layer. The relative thickness of a high-k layer, insofar as its effect on device performance, depends upon the relative permittivity or dielectric constant (k) of the material, such that the thickness can be defined in terms of k. Preferably, the high-k dielectric has a thickness (in nm) less than about 2×(k/4) in thickness, more preferably less than about 1.5×(k/4), and most preferably between about 0.2×(k/4) and about 1.0×(k/4) in thickness. For example, because ZrO2 has a k value of about 20, ZrO2 layers in accordance with certain embodiments are most preferably between about 1 nm and about 5 nm thick. More generally, the absolute thickness of the high-k film is preferably less than 100 Å (10 nm), more preferably, less than about 50 Å.
[0032] In the preferred range of thicknesses, the dielectric layer will tend to have gaps between grains of the high dielectric material. Such gaps may result during thin film deposition, due to islanding effects, or can also form after deposition during a high temperature treatment or annealing. Such treatments can improve the crystallinity of the film, but can also cause shrinkage or otherwise cause separation of grains. Accordingly, in accordance with certain aspects of the invention, the high-k material is initially a discontinuous film.
[0033] Preferably, the high-k material is deposited by atomic layer deposition (ALD), which advantageously enables formation of extremely thin layers in the preferred thickness ranges with excellent conformality. ALD involves alternating surface reactions of vapor phase reactants or precursors. Deposition temperatures are preferably maintained within a window above the condensation temperatures of the vapor phase reactants but below the temperature at which thermal decomposition of the reactants will occur. Accordingly, a first vapor phase reactant pulse chemically adsorbs upon the substrate, followed by removal of excess first reactant, such as by evacuation and/or purging. The first reactant self-limitingly forms no more than about one monolayer on the substrate. Preferably, the reactant precursor includes ligands that remain on the adsorbed monolayer, preventing further reaction. The first reactant thus saturates available surface sites. After removal of excess first reactant, a second vapor phase reactant is brought into contact with and reacts with the adsorbed species of the first reactant. For example, the second reactant may strip ligands from the adsorbed species of the first reactant, or may replace them in a ligand-exchange reaction. After a saturative pulse, excess second reactant and any by-product is removed from the chamber, such as by evacuation and/or purging. This cycle of first reactant pulse, removal, second reactant pulse, removal can be repeated as many times as desired, depending upon the desired thickness of the ALD deposited layer. Each cycle can also include one or more additional reactant pulse(s) and corresponding removal steps, depending upon the complexity of the material being deposited.
[0034] General principles of ALD and its manner of operation are described more thoroughly in T. Suntola, Handbook of Crystal Growth III, Thin Films and Epitaxy, "Part B: Growth Mechanisms and Dynamics, Ch. 14, Atomic Layer Epitaxy," pp. 601-663, Elsevier Science B.V. (1994), the disclosure of which is expressly incorporated herein by reference.
[0035] Even with the excellent conformality afforded by ALD, a high-k material can still form in a discontinuous fashion. Such discontinuity may be due to post-deposition shrinkage during a crystallization step. Moreover, because of the thinness of the preferred high-k layers, even ALD will not afford perfect coverage with each cycle. This phenomenon arises from the inherent steric interactions between molecules adhering to the substrate in each pulse. For example, large organic ligands can physically prevent occupation of every available site during each pulse. Accordingly, rather than a full monolayer per cycle, two, three, five or even more cycles may be required, on average, to complete a full monolayer. This steric hindrance effect can also contribute to discontinuities in the thickness of the deposited layer in certain preferred embodiments.
[0036] The high-k dielectric materials employed in the preferred embodiments preferably comprise a metal oxide including at least one element from groups IIA, IIIB, and IVB of the periodic table. The high-k dielectric layer can be a multilayered metal oxide, solid metal oxide solution, ternary compound, doped metal oxide, etc. Preferably, the metal oxide does not react with the underlying conductor, which comprises silicon in the exemplary embodiments described below.
[0037] Oxides of group IIA include well-known high-k oxides such as barium strontium titanate (BST), strontium titanate (ST), strontium bismuth tantalate (SBT), lead strontium titanate (PST), etc.
[0038] Oxides of group IVB suitable for use as a high-k material in accordance with the preferred embodiments include zirconium oxide (ZrO2) and hafnium oxide (HfO2).
[0039] Group IIIB elements are also known as rare earth elements. Within this group, rare earth oxides are preferably selected from a group of oxides for which the (III) oxidation state is the single most stable, namely scandium oxide (Sc2O3), yttrium oxide (Y2O3), lanthanum oxide (La2O3), gadolinium oxide (Gd2O3), holmium oxide (Ho2O3), erbium oxide (Er2O3), and lutetium oxide (Lu2O3). Oxides of the rare earth elements Ce, Pr, and Tb have two oxidative states (III and IV). Among oxides of these elements, the higher oxidation state (IV) oxides CeO2, PrO2 and TbO2 are preferably not employed in contact with silicon. Oxides of metals from this group in the lower oxidation state (III), namely Ce2O3, Pr2O3 and Tb2O3, can be employed in direct contact with silicon in certain preferred embodiments. Oxides of the rare earth elements Nd, Sm, Eu, Dy, Tm, and Yb are not preferred their binary oxides are more stable in the (II) oxidation state than the (III) oxidation state. Oxides of the higher oxidation state (III) of these elements has the form X2O3, while oxides of the lower oxidation state (II) has the form XO, where X represents a rare earth element.
[0040] Referring now to FIG. 1, a general process sequence in accordance with the preferred embodiments is shown. Initially, a conductor is provided 100. The conductor can comprise any suitable material that is subject to oxidation. For example, the conductor can comprise tantalum, tungsten, aluminum, titanium, etc.
[0041] Preferably, the conductor comprises a conductively doped silicon. More preferably, the silicon comprises a single crystal structure, such as an epitaxial silicon layer or the top surface of a monolithic silicon wafer. In a preferred embodiment, the structure to be formed is a transistor gate stack. In another preferred embodiment, the silicon conductor is the bottom electrode for a memory cell capacitor. Advantageously, because the preferred embodiments enable forming high-k materials over silicon surfaces, the electrode can assume any configuration known in the art for maximizing the surface area of the capacitor bottom electrode, including hemispherical grained silicon (HSG-Si). Forming high-k materials in contact with silicon substrates has been avoided in the past because of the high risk of oxidizing the silicon substrate using conventional high-k dielectric formation processes.
[0042] Next, the surface of the conductor is preferably cleaned 110 of any native oxides, if necessary. Such cleaning may be conducted, for example, for silicon conductors by an ex situ cleaning involving a standard clean 1 (SC1)/HF wet etch bath. Alternatively, an integrated HF and acetic acid vapor cleaning can be conducted in a neighboring module within a cluster tool, reducing transport time and opportunities for recontamination or oxidation. In a preferred embodiment, the cleaning oxide left by the SC1 step is not removed, but is instead used as an initial, protective oxide layer to be removed inside the reaction chamber. Preferably, the cleaning oxide is removed in a hydrogen bake step within the same reaction chamber in which deposition of the high-k dielectric is to be performed. As is known in the art, the hydrogen bake step involves elevated temperatures in the presence of a reducing agent (typically hydrogen) to sublimate native oxide or an intentional protective oxide. Small amounts of HCl vapor can be added to the hydrogen bake step for cleaning metal contaminants and the like. In another embodiment, plasma products can assist or conduct in situ cleaning, such as by substituting H radicals from a remote microwave generator for hydrogen gas.
[0043] Either after ex situ cleaning or prior to in situ cleaning, the workpiece bearing the conductor is loaded into a process chamber for high-k dielectric material deposition 120. As noted above, any suitable process may be used to deposit the high-k material. Preferably, the deposition is by atomic layer deposition (ALD), more preferably, for a sufficient number of cycles to deposit a layer with the preferred thicknesses described hereinabove. The preferred thin layers of high-k material are typically deposited as discontinuous layers on the conductor. In the event that a continuous layer is formed, a non-uniform thickness can result in the preferential conversion of the underlying conductor under the thinnest portions of the high-k dielectric during the subsequent process, described in detail below.
[0044] After deposition 120, the high-k layer can optionally be subjected to an independent anneal step to help crystallize the high-k layer. Such independent crystallization, if conducted, may cause gap formation even if the high-k dielectric was deposited as a continuous layer. Preferably, however, this independent crystallization step is omitted in favor of crystallization during the subsequent process, described below.
[0045] Following deposition 120, the layer is subjected to a "light" oxidation or nitridation 130 to convert the portions of the conductor exposed by the gaps in the discontinuous high-k layer to a filler dielectric. As used herein, the term "oxidation" may refer to reactions that form oxide, or reactions that form oxide or nitride. The particular meaning in each case may be ascertained by context. Conditions are carefully selected to ensure oxide or nitride formation on the conductor through the gaps in the high-k material, without excessive oxidation under the high-k material grains. Advantageously, the filler dielectric formed on the conductor surface plugs leakage paths along the gaps and will also tend to expand into the gaps in the high-k dielectric themselves. Preferably, for dielectrics on silicon, temperatures during the oxidation are maintained between about 300° C. and about 900° C. for between about 1 second and about 3600 seconds, depending upon the oxygen source employed, which can be selected from the compounds described below. An exemplary oxidant is dry and dilute O2, for which more preferred temperatures for a light oxidation are between about 650° C. and about 850° C., preferably for between about 60 seconds and about 600 seconds. In the case of dry O2, the O2 partial pressure is preferably less than about 10−2 Torr
[0046] It will be understood that for dielectrics on metal electrodes the preferred temperatures may be lower than those described above for dielectrics on silicon. For example, for a TiN/Ta2O5/TiN capacitor, the oxidation can be performed at less than about 600° C. and even at temperatures as low as about 450° C. Under plasma conditions, or when remotely generated radicals are provided to the chamber during the light oxidation step, the temperatures may even be in the range of from about 200° C. to about 300° C.
[0047]FIGS. 2 and 3 illustrate a preferred embodiment in which a high-k material is formed over a silicon conductor 10. As noted, the conductor can comprise other materials in other embodiments. Silicon, however, has particular advantages as a channel material for a MOSFET, and as a high surface-area electrode for a memory cell capacitor.
[0048] In FIG. 2A, a high-k metal oxide film 12 has been formed over the conductor 10. As illustrated in FIG. 2B, the high-k film 12 is a discontinuous film comprising a plurality of crystal grains 14 having gaps 16 therebetween. As noted above, the gaps 16 may have formed during the thin film deposition, due to an islanding effect, or after deposition during a high temperature treatment, which is often conducted to improve the crystallinity of the film and increase the dielectric constant.
[0049]FIGS. 3A and 3B illustrate the structure illustrated in FIGS. 2A and 2B after an exemplary oxygen anneal step. During the anneal, oxygen preferentially diffuses through the gaps 16 illustrated in FIG. 3B and oxidizes the underlying silicon surface of the illustrated conductor 10. Silicon oxide (SiO2) filler 18 thus preferentially forms underneath and expands into the gaps 16. The silicon oxide 18 effectively reduces the leakage currents along the grain boundaries. The surface area covered by these filler spots 18 is preferably less than about 20% of the total conductor surface area, more preferably less than about 5%, and most preferably less than about 1%. It will be understood that these percentages represent the surface area occupied by the preferentially formed filler spots 18. While absence of the grown filler dielectric 18 underneath grains is preferred, in some embodiments an identifiably thinner dielectric will form under the grains 14. In such embodiments, the percentage of surface covered by the thicker filler spots 18 will still preferably fall within the preferred ranges set forth above. Accordingly, whether discontinuously (as preferred) or continuously formed, these filler spots 18 have a small effect on the overall dielectric constant of the dielectric layer 12.
[0050] Thus, the overall dielectric structure illustrated in FIGS. 2A and 3B comprises a discontinuous high-k dielectric layer 12 in registration with a discontinuous, underlying, and partially overlapping silicon oxide layer formed by a plurality of filler spots 18. Preferably, the filler spots 18 comprise an amorphous dielectric. The dielectric spots 18 have a lower dielectric constant than the grains 14 of the high-k layer 12, but account for only a small amount of the material, and so, do not significantly reduce the dielectric constant of the overall dielectric structure. However, the overlap of these filler spots 18 with the gaps 16 in the high-k layer 12 blocks leakage paths through the high-k dielectric layer 12.
[0051] Note that, while the filler 18 is illustrated as discontinuously formed only underneath the gaps 16, it will be understood that a small amount of oxidation at the interface between high-k grains 14 and the conductor 10 can also occur under some conditions. However, such oxidation is small in the preferred embodiments, compared to oxidation through the gaps 16. Accordingly, any oxidation underneath the grains 14 preferably averages at most about 30% of the thickness of the oxidation in the filler spots 18 underneath the gaps 16. More preferably, oxidation under the grains 14 averages less than 10% of the thickness of the oxidation under the gaps 16.
[0052] In the exemplary embodiment, wherein silicon dioxide is formed underneath the gaps and within the gaps between the high-k material grains, further reactions can also occur between the resultant silicon dioxide and the high-k material. Such further reactions will produce metal silicates, which have a higher dielectric constant than silicon dioxide and can similarly reduce the leakage current flowing along the grain boundaries.
[0053] Alternatively or additionally, a discontinuous high-k layer, as illustrated in FIGS. 2A and 2B, can be formed, followed by deposition of a filler dielectric film, preferably amorphous, thereover. Referring to FIGS. 4A and 4B, a deposited silicon oxide film 22 can fill gaps 16 between grains 14 of the discontinuous high-k material 12. Such a composite film would have silicon oxide 22 blocking current leakage paths through the gaps 16 between grains 14 and, unlike the embodiment illustrated in FIGS. 3A and 3B, also includes silicon oxide 22 overlying the grains 14 of the high-k material. Deposition by ALD of silicon oxide or another amorphous dielectric can even deposit material into the very small gaps 16 between grains 14 sufficient to block potential current leakage paths.
[0054] Another embodiment of the invention is illustrated in FIGS. 5A and 5B. In contrast to the embodiments described above, this embodiment comprises first forming a continuous, low-k dielectric layer 24 over the conductor 10. Layer 24 is also referred to herein as an interfacial dielectric layer. A discontinuous layer of a high-k material 12 is deposited over the oxide interlayer 24. For example, a silicon oxide layer can be formed over a silicon substrate prior to depositing the high-k material. The continuous layer is ultrathin, preferably, less than about 2 nm thick, more preferably, less than about 1 nm thick, and most preferably, no more than about 0.5 nm thick. In a preferred embodiment, the interfacial dielectric layer 24 is a 0.5 nm silicon oxide layer formed over a silicon wafer by rapid thermal oxidation (RTO). The silicon oxide layer can be formed by O2 thermal oxidation, but is more preferably formed by NO thermal oxidation.
[0055] Following the deposition of the discontinuous high-k dielectric material 12, the structure is preferably subjected to an anneal, preferably, an oxidation or a nitridation anneal. Conditions for the anneal are preferably selected to minimize, and more preferably, to avoid further growth of the underlying interfacial, low-k dielectric layer 24.
[0056] Oxygen Source Chemicals
[0057] In certain of the illustrated embodiments described above, oxidation is conducted through gaps between high-k material grains. The oxygen source gas is preferably a volatile or gaseous compound that contains reactive oxygen and is capable of reacting with the conductor exposed in the gaps under the preferred annealing conditions, resulting in the formation of an oxide of the conductor. Typically, this oxide in the gaps will be different from the oxide of the high-k material.
[0058] Exemplary oxygen source gases include, but are not limited to, oxygen (O2), ozone (O3), oxygen with unpaired electrons (i.e., atomic oxygen), oxygen ions, hydrogen peroxide (H2O2), organic peroxides, organic ozonides, peracids, water (H2O), alcohols, and N2O. Mixtures of such source chemicals, optionally diluted with inert gases, can also be used. See, for example, PCT publication No. WO 99/35311, published Jul. 15, 1999, the disclosure of which is incorporated by reference herein, which discloses that an oxygen source gas, optionally diluted with an inert gas. As disclosed in this reference at, e.g., p. 7, lines 12-27, the oxygen is preferably stored diluted to less than the explosive limit for the given reaction chamber conditions. Preferably, such dilute oxygen source containers contain less than about 6% oxygen diluted with an inert gas, more preferably between about 1% and about 5% oxygen diluted in an inert gas.
[0059] Nitrogen Source Chemicals
[0060] As an alternative to oxidation, it is contemplated that the filler material in the gaps can be formed by nitridation after forming the high-k dielectric layer 12. A nitrogen source gas is preferably a volatile or gaseous compound that contains reactive nitrogen and is capable of reacting with the exposed conductor underneath the gaps among grains under the annealing process conditions. A nitride, such as silicon nitride, thereby forms on the conductor surface and expands into the gaps between grains of the high-k dielectric material.
[0061] Exemplary nitrogen source chemicals include, but are not limited to, nitrogen with unpaired electrons (i.e., atomic nitrogen), excited nitrogen, ammonia (NH3), hydrazine (N2H4), hydroxylamine, and hydrogen azide. Mixtures of such chemicals, optionally diluted with inert gases, can also be used.
[0062] In this example, a high-k dielectric layer is formed on a silicon substrate by ALD. The skilled artisan will appreciate, however, that the high-k dielectric material can be formed by any suitable method (e.g., MOCVD).
[0063] Zirconium dioxide (ZrO4) was deposited by ALD onto a silicon substrate as follows. In pulse A, ZrCl4 vapor was introduced to the reaction chamber, exposing the wafer surface for 1.5 s. In purge A, the reaction chamber was purged with nitrogen gas for 3.0 s to remove excess ZrCl4 and reaction byproducts. Pulse A and purge A are together referred to as the "metal phase." In pulse B, water vapor was introduced to the reaction chamber, exposing the wafer surface for 3.0 s. In purge B, residual H2O and reaction byproducts were removed by purging the reaction chamber with nitrogen gas for 4.0 s. Pulse B and purge B are together also referred to as the "oxygen phase." During each of the reaction phases, the reactants were supplied in sufficient quantities to saturate the surface of the substrate.
[0064] This exemplary high-k deposition cycle is summarized in Table I.
TABLE I Phase Reactant Temperature (° C.) Pressure (mbar) Time (sec) Pulse A ZrCl4 300 5-10 1.5 Purge A N2 300 5-10 3.0 Pulse B H20 300 5-10 3.0 Purge B N2 300 5-10 4.0
[0065] The ALD cycle described in Table I was repeated between 34 times and 170 times. The average deposition rate was about 0.59 Å/cycle at 300° C., providing a layer of ZrO2 from about 20 Å to about 100 Å thick.
[0066] Generally, ALD is performed at from about 200° C. to about 500° C. For an amorphous ZrO2 layer, the temperature is preferably at the lower end of this range, between about 200° C. and about 250° C., more preferably, about 225° C. For a crystalline ZrO4 layer, the temperature is preferably at the higher end of this range, between about 250° C. and about 500° C., more preferably, about 300° C. As will be appreciated by the skilled artisan, however, mixtures of amorphous and crystalline material are deposited at temperatures around the boundary of these two temperature regimes. The illustrated process produces a largely crystalline ZrO2 film.
[0067] In the present example, the metal monolayer formed in the metal phase is self-terminated with chloride, which does not readily react with excess ZrCl4 under the preferred conditions. The preferred oxygen source gas, however, reacts with the chloride-terminated surface during the oxygen phase in a ligand-exchange reaction, which is limited by the number of previously adsorbed of zirconium chloride complexes. Moreover, the reaction between ZrO4 and water results in hydroxyl and oxygen bridge termination that does not further react with excess oxidant in the saturative phase.
[0068] Preferably, sufficient cycles are conducted to grow a layer of ZrO4 from about 20 Å to about 100 Å thick, more preferably, from about 20 Å to about 40 Å thick, to maximize the likelihood that the deposited high-k layer is discontinuous. The dielectric constants of the preferred layers are from about 18 to about 24. In the illustrated example, 30 Å of ZrO2 was deposited.
[0069] Following ALD deposition of ZrO4, a light oxidation was performed to convert exposed silicon in the gaps of the high-k layer to silicon oxide, thereby blocking potential current leakage paths. Advantageously, conditions are selected under which oxidation preferentially occurs at the gaps, with little or no oxidation occurring at the silicon-ZrO2 interface. In a preferred embodiment, N2O is the oxygen source chemical. In another preferred embodiment, dilute O2 in an inert gas is the oxygen source chemical. Preferably, the temperature of the oxidation reaction is not greater than about 900° C., more preferably, between about 600° C. and about 800° C. The oxidation is preferably performed for between about 30 seconds and about 60 seconds. The skilled artisan will appreciate that the reaction time and temperature are interrelated. In another preferred embodiment, a light nitridation of silicon exposed by the gaps is performed using dilute NH3 at from about 600° C. to about 800° C.
[0070] One skilled in the art will realize that HfO2 may be deposited by ALD under conditions analogous to those described for ZrO2 in the present example using a hafnium source, for example, HfCl4, as the metal phase rather than ZrCl4. The skilled artisan would further understand that a light oxidation of the underlying silicon substrate in a post-deposition anneal would proceed analogously.
[0071] FIGS. 6-9 illustrate experimental results of oxidation and nitridation anneals of 4.0 nm ALD Al2O3 or HfO2 layers on 0.5 nm RTO (rapid thermal oxide) SiO2, an interfacial layer (24 in FIG. 5A). Anneals were performed at from 600° C. to 1000° C. for 60 s. The wafers were then annealed at 400° C. under forming gas before measurement of an EOT parameter. This second anneal does not affect the interface oxide. In these examples, an EOT parameter was measured using a Corona-Oxide-Si (COS) method on a COS Quantox system (KLA-Tencor Corp.). The EOT parameter (GateTox™) is the accumulation capacitance, expressed in Å.
[0072]FIG. 6 illustrates the EOT of Al2O3 dielectric layers under a series of oxidation annealing conditions. The EOT increased under higher oxygen concentrations (40 Torr and 3×10−2 Torr) at higher temperatures. The Al2O3 high-k layer was stable up to from about 900° C. to about 1000° C. under sufficient oxygen concentrations. EOT decreased in lean oxygen anneals. The EOT from the leanest oxygen anneal was the similar to that for an N2 anneal.
[0073]FIG. 7 illustrates a series of similar experiments for HfO2 dielectric layers. In these experiments, annealing under N2 increased EOT compared to an unannealed layer. Oxidative annealing, however, increased the EOT to an even greater extent, with higher annealing temperatures and oxygen concentrations providing higher EOT values. In no case did the EOT decrease, as was observed for Al2O3 in FIG. 6.
[0074]FIG. 8 illustrates capacitance-voltage curves for 4 nm HfO2 layers deposited on 0.5 nm RTO after oxidative annealing. The upper trace shows the capacitance of the HfO2 layer as deposited. The EOT parameter for this material was 1.9 nm. The second trace shows the capacitance after an 800° C., 60 s anneal under 7×10−3 Torr O2. The EOT parameter increased to 2.3 nm. The third trace shows the capacitance after an 800° C., 60 s anneal under 3×10−2 Torr O2. The EOT parameter increased to 2.6 nm. In these experiments, increasing oxygen concentration correlated with increased EOT.
[0075] Capacitance-voltage curves for post-deposition anneals of 4 nm HfO2 layers deposited on 0.5 nm RTO under NH3 are illustrated in FIG. 9. In this experiment, the EOT parameter for the HfO2 layer as deposited was 2.0 nm. Annealing under NH3 at 600° C. for 60 s reduced the EOT parameter slightly to 1.9 nm. Annealing under NH3 at 800° C. for 60 s resulted in an HfO2 layer with an EOT parameter that was unmeasurable by the instrumentation used in these experiments.
[0076] In view of the present disclosure, annealing conditions under which preferential oxide regrowth of the interfacial dielectric 24 occurs may be readily ascertained by one skilled in the art without undue experimentation. More preferably, conditions for the high-k anneal are selected under which the thickness of the interfacial dielectric 24 does not increase.
[0077] One skilled in the art will further appreciate that post-deposition anneal conditions that do not increase the thickness of the interfacial dielectric layer 24 in FIG. 5 may also advantageously be used to lightly oxidize or nitridize structures such as those illustrated in FIG. 2 to provide the structures illustrated in FIG. 3.
[0078] In view of the present disclosure, the skilled artisan could select, without undue experimentation, annealing conditions comprising an oxygen or nitrogen source chemical, temperature, and time that will result in the preferential oxidation of the substrate in the gaps between the grain boundaries for any given high-k layer deposited thereon, resulting in a non-uniform and preferably discontinuous silicon oxide, silicon nitride, or silicon oxynitride layer.
[0079] It will be appreciated by those skilled in the art that various modifications and changes may be made without departing from the scope of the invention. Such modifications and changes are intended to fall within the scope of the invention, as defined by the appended claims.
|Patente citada
|Fecha de presentación
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|4 May 1936
|28 Mar 1939
|American Box Board Co
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|17 Ene 2006
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|Clasificación de EE.UU.
|Clasificación internacional
|Clasificación cooperativa
|Clasificación europea
|12 Ago 2003
Owner name: ASM INTERNATIONAL N.V., NETHERLANDS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:RAAIJMAKERS, IVO;SOININEN, PEKKA J.;MAES, JAN WILLEM;REEL/FRAME:014368/0775;SIGNING DATES FROM 20030624 TO 20030716
|29 Jun 2011
|Fee payment
Year of fee payment: 4
|15 Jul 2015
|Fee payment
Year of fee payment: 8


text:
Installing Oracle 11gXE on Amazon Elastic Cloud
There is officially now no good excuse for not running your own instance of Oracle 11g and getting into Apex 4 development, or just playing with SQL and PL/SQL.
- Oracle 11g XE is free.
- You can rent the hardware to run it by the hour, at a fraction of the cost of most online hosting services.
- It's easy to install – just use this step-by-step guide!
1. Gather your software.
You'll need:
- Oracle Database Express Edition 11g Release 2 for Linux x64.
The file name will be oracle-xe-11.2.0-1.0.x86_64.rpm.zip, and is about 308MB.
- PuTTY
- WinSCP (or any SCP/SFTP client for your OS)
2. Get your Amazon EC2 account.
3. Launch Instance.
4. Set up your key pair.
5. Upload the Oracle installer to the instance.
6. Login to your instance.
7. Install Oracle.
If you just want to know what to type, here is basically all you need (type the commands after the "#" – don't type the "#" itself though):
# unzip /root/oracle-xe-11.2.0-1.0.x86_64.rpm.zip # rpm -ivh /root/Disk1/oracle-xe-11.2.0-1.0.x86_64.rpm # /etc/init.d/oracle-xe configure
This script will prompt you for the Apex port and the database port – just press Enter to accept the defaults (8080 and 1521, respectively). It will then ask for the password for SYS and SYSTEM. Finally, it will ask you if you want it to run on startup. Accept the default (yes).
8. Disable the firewall.
# chkconfig iptables off # service iptables stop
This disables the internal firewall running in your linux instance.
9. Log into Apex.
Open your browser and point it at your instance. Take the Public DNS and add :8080/apex/apex_admin, e.g.:
The login name is admin, and the password is (for now) the same password you entered for the SYS and SYSTEM accounts earlier.
It will prompt you to change the password. It has to be a fairly secure – you'll need at least a letter, number and symbol, and you can't include the login name. After changing your password, you'll need to log in again but using the new password.
You now have a fully-fledged Oracle Application Express environment, version 4.0.
10. Create a Workspace.
The last thing you need to do before you can start creating applications and stuff is to create a workspace. Click "Create Workspace" and answer the prompts to create the workspace along with its own schema and admin user account.
Log out of Apex Administration, and log into the newly created workspace – and you will now be able to start creating applications, tables, and what-have-you. You can also use Apex to write code (such as procedures and packages), but I suggest you use Oracle SQL Developer for this kind of thing because it's a bit more powerful.
From now on, to get back into your Apex development environment, you can use this url:
Have fun!
Oh, by the way: when you've had your fun, and you want to stop your instance (which at about 34c/h may cost around $60 per week if you leave it running 24×7), don't forget to terminate it from AWS Management Console. Before you do, however, you can take a snapshot of it in its current state so you can restore from it later. (Before this, you might want to shut down the Oracle database within the instance first – although I've found it quite easy to recover an instance which was snapshotted while the database was up and running). To do that, right-click on the instance in AWS Management Console, and select "Create Image (EBS AMI)". It may take some time for the image to be created. When the image creation is complete, you can then Terminate the instance. The AMI will take up a bit of storage that will cost a dollar or two per month; and you can now spin up as many copies of your machine whenever you want.
Lew posted an excellent introduction to PuTTY and SSH for AWS Newbies that I heartily recommend. It was posted in 2009 but still applies.
engrmkchow permalink
Thank you very much, well presentation and very much effective.
i am benefited from this sharing.
Dear Jeff,
Thanks for sharing this article. I am from Taiwan. How do you think about the open bug 11738319:
Hi Jeff,
I follow the same steps to create my EC2. But I can't login with ec2-user. The server response ""Server refused our key". Do you know why? Thank you very much.
Johan from Taiwan
Johan permalink
Dear Jeff,
I have a question about Oracle XE License Agreement. If I use Oracle XE to develop my member system and shopping cart for commercial purpose. Do I violate the (a) rule:
"We grant you a nonexclusive, nontransferable limited license to use the programs for: (a) purposes of developing, prototyping and running your applications for your own internal data processing operations;…"
Thank you very much.
ptomlins permalink
Excellent tutorial! I have been down this road myself more than once. I have run into one issue that used to drive me absolutely nutters until a moment of inspiration a week ago led to a solution.
Every time you restart your EC2 instance, you get a new host name. Every time you get a new host name, your Oracle Listener fails because it's configured by host name. So I was updating the listener.ora file after every restart (reboots are not a problem because the host name doesn't change). Since I am mostly broke, I couldn't leave the instance running 24/7.
So I copied the listener.ora file into a file called listener.template. Then, in the template file, I changed the host name to 'myName'. I wrote a shell script that uses sed to find and replace 'myName' with the current host name. Finally, the script restarts Oracle 11 XE and the listener.
Once I got the script working, it was then a matter of configuring it to run at run level 3 on every start up, which, depending upon your Linux, can be really easy or rather not easy. I use SuSE 11, so I had to learn how to create a 'service' script, save that script to /etc/init.d, create a link to it in /etc/init.d/rc3.d, then execute a chkconfig -add .
Here is the script:
# changeHostname
# ————–
# 22 March 2012
# bash script to change the hostname in the LISTENER.ORA file
# this needs to be done every time you launch your AWS cloud machines
# that are not permanent (a.k.a expensive).
sed "s/myName/$NEWNAME/" ${LISTENER}listener.template > ${LISTENER}listener.ora
/etc/init.d/oracle-xe restart
You need to change the LISTENER variable to the location of your listener.ora file.
I have the other scripts too if interested.
Comments are closed.

subset: commoncrawl


text:
Early Childhood Education
The mission of the early childhood program is to:
- Provide optimal professional teaching and learning experiences at the bachelors, masters, and doctoral level;
- Provide quality care, education, and family support programs for children and families of NMSU and Dona Ana Community College students, faculty and staff;
- Provide opportunities for faculty and graduate students for research, teaching and service.
The field of Early Childhood Education is concerned with the development and learning of children from birth through age eight. Our program focuses on early children education through a theoretical orientation which places early childhood education within broader social, historical, political, and cultural contexts. Coursework provides a context for students to critically examine early education and child care. Themes of bilingual and multicultural education and care, critical thinking, and reflective teaching are infused throughout the Early Childhood coursework. Early Childhood Education is an exciting and dynamic field in which standards for teachers are being raised and career opportunities are constantly developing.
The NMSU program offers a range of coursework encompassing infants, toddlers, preschoolers, and primary-aged children. Through field placements at Myrna's Children's Village Laboratory School and the local public schools, candidates develop competence in the use of culturally relevant and developmentally appropriate practices. Main themes within the program include understanding children as the protagonists of their own learning, supporting families in their roles with young children, respecting diversity, and addressing the needs of children with diverse abilities in inclusive settings.
The program follows the personnel recommendations established by the National Council for the Accreditation of Teacher Education Programs, the National Association for the Education of Young Children (NAEYC) and the New Mexico Public Education Department.


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NPR Newscast
4min 45sec
September 29, 2014 The new book by Matt Bai explores the political resonance of Gary Hart, whose presidential ambitions were dashed when he revealed he had an affair.
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July 2, 2014 In their new book, Peter Finn and Petra Couvee explain the fraught history behind the Russian novel, Doctor Zhivago. And they tell the story of Boris Pasternak, the novel's brave author.
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February 19, 2014 Dave Itzkoff's new book, Mad as Hell, chronicles the making of the movie Network. NPR commentator Ted Koppel says Network was meant as a satire, but seems like "inspired prophecy" now.
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January 9, 2014 Anjan Sundaram's new memoir Stringer chronicles his adventures as a budding journalist in one of the world's most chaotic spots: the Democratic Republic of the Congo. Reviewer and veteran journalist Ted Koppel says Stringer "is a book about a young journalist's coming of age, and a wonderful book it is, too."
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December 12, 2013 Former Nightline host and NPR contributor Ted Koppel interviewed Nelson Mandela. Koppel says that Mandela is deservedly seen as a great man, but that one of the keys to his exalted status is that for 27 years he was behind bars, hidden from the kind of scrutiny and decision-making that can turn heroes into mere mortals.
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May 11, 2009 "We need a policy on torture," Talk of the Nation news analyst Ted Koppel says. "The argument has evolved into the positing of two questions: Did it work and was it necessary?" He adds: "Torture should be, clearly and unambiguously, against the law."
August 16, 2008 Ted Koppel lived through some the most exhilarating and dangerous moments of his life and career with Leroy Sievers. Koppel remembers Sievers as a man larger than life.
April 21, 2008 It may be time for the U.S. government to slip the grip of the corn lobby and fund biofuels using matter other than corn — and at the same time, drop tariffs on ethanol made in Brazil.
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April 11, 2008 Ted Koppel says the global efforts to draw attention to China's human rights record as the Olympic torch continues its rounds is working. But, he says, as far as bringing real change in Tibet is concerned, the protests surrounding the torch are doing little.
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March 21, 2008 Americans appear to have a limited ability to process major crises. More than one at a time can be overwhelming.
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March 5, 2008 Hillary Clinton's wins in three out of four primaries yesterday may be problematic for the Democratic Party, because it almost guarantees a bitter drawn-out battle for the Democratic presidential nomination. And that, NPR Senior News Analyst Ted Koppel says, is probably good news for Republican John McCain.
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February 21, 2008 China is struggling to produce enough energy to keep fueling its remarkable pace of economic growth. That means that coal mines throughout China are pressed to bring millions more tons of coal to the surface even as the government vows to shut unsafe mines.
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February 8, 2008 What exactly is the U.S. mission in Afghanistan? And what are the presidential candidates' policies concerning the region? NPR Senior News Analyst Ted Koppel looks at the conflicts in the region during the past two centuries and what they mean for America's current foreign policy.
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January 29, 2008 Ted Koppel has been thinking about the country's economic ills — from a dishonest company promising to improve your credit score, to the proposed economic stimulus bill in Congress.
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January 16, 2008 President Bush appealed to Saudi leaders this week to increase the flow of oil — to help to keep prices under control. It's a ritual for U.S. presidents — and one that NPR Senior News Analyst Ted Koppel says is almost obsolete.
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text:
October 10, 2015
3 Jumbo Shrimp
Crab Meat Stuffing
1 pound crab meat
2 cups of panko
1/2 diced green pepper
1/2 diced red pepper
1 stalk diced celery
1/2 diced yellow onion
2 cloves minced garlic
dash of Cajun spice
1 oz monterrey jack cheese shredded
Tasso Cream Sauce
1 qt. heavy whipping cream
1/2 cup white wine
2 oz. diced tasso ham
dash of cajun spice
Click Here to access the online Public Inspection File
Viewers with disabilities can get assistance accessing this station's FCC Public Inspection File by contacting the station with the information listed below. Questions or concerns relating to the accessibility of the FCC's online public file system should be directed to the FCC at 888-225-5322, 888-835-5322 (TTY), or firstname.lastname@example.com.


text:
When perusing your favorite fashion blogs, you might've noticed a trend—that many brand names appear over and over again. These ultra-stylish ladies know a good brand when they see it, and each one certainly has her standbys. With so many on-point items to choose from—thanks to new fall items rolling out on a daily basis—we've completed the selection process for you.
Scroll down to see the blogger brands that should definitely be on your radar, and a few of our favorite items from each you can shop now.


text:
- Northern New York Newspapers
- Watertown
- Ogdensburg
- Massena-Potsdam
- Lowville
- Carthage
- Malone
- NNY Business
- NNY Living
- NNY Ads
Even the most ardent of local high school football supporters were amazed and excited with last weekends sweep of Section 3 football quarterfinals.
Having followed and covered Frontier League football and now Section 3 football for 40 years, a 6-0 sweep, as far as the records Ive been able to uncover, is unprecedented.
Since Section 3 began playoffs in 1979, weve had our fair share of sectional champions from the North Country 14 to be exact. But to have all of the local qualifiers advance on the first weekend. Well, thats pretty special.
Highlighting last weeks action was the strong showing from Class C North. The top three from that conference moved on, with unbeaten Immaculate Heart Central routing defending champion Skaneateles, four-time sectional champion General Brown holding off Frankfort-Schuyler, and Thousand Islands pulling off the surprise of the weekend, knocking off unbeaten and No. 2 seed Sherburne-Earlville on the road.
The Frontier League is now assured of one of its teams playing for the Class C title Sunday, Nov. 10 in the Carrier Dome.
In Class A, top-seeded Indian River and No. 3 Carthage easily advanced. Both the Warriors and Comets have much stiffer challenges tonight against Jamesville-DeWitt and East Syracuse-Minoa, respectively. But it wouldnt be a total surprise to seem them squaring off again in the Dome.
And then there is the Sandy Creek Comets. The defending Class D champions dug themselves a 14-0 hole at West Canada Valley only to roar back and put the final 34 points on the board. A semifinal meeting with Dolgeville tonight is all that stands in Sandy Creeks way of another championship trip to the Dome.
I was thinking earlier this week about some of the reasons for such success. The bottom line is these six teams play hard, execute well and dont beat themselves. There is an abundance of talent, to be sure, but team chemistry and knowing their roles is almost as important.
However, you need look no further than at the top for one of the significant reasons why these six teams are achieving at a high level. Strong leadership, in the form of veteran head coaches, is the one key ingredient that all of the teams possess.
From General Browns Steve Fisher, the dean of area coaches with some 46 years under his belt, to Indian Rivers Cory Marsell, IHCs Paul Alteri and Thousand Islands Joe Gilfus, all in their eighth seasons, this group of outstanding coaches are not only leaders, but mentors, teachers and often-times, surrogate fathers for many of their players.
Along with Sandy Creeks Mike Stevens, in his 15th season, and Carthages Sam Millich, in his 14th year, they establish the parameters by which their programs run, they set the tone for how their teams play, and they have the knowledge and experience to make the right decisions at the right times.
These teams are extensions of their coaches. All are former players, including four at their alma maters (Alteri, Millich, Marsell, Stevens), and one (Fisher) who has been around long enough to have coached against them in their playing days.
Each has a unique coaching style. But the one trait they have in common is that when they talk, players listen. When you step on the field, its all business. But there is also always room to have fun because thats what high school sports is all about.
Fisher, the ultimate old-school boss, has said hes having more fun coaching this group of Lions than probably any in his long tenure.
Marsell was a tough, hard-nosed linebacker in his playing days at Indian River. His Warrior teams play like their coach did, with reckless abandon and great spirit. And to say Marsells system has worked is a huge understatement. Each year, like this season, he seems to plug new players into his modified Wing-T offense and they do nothing but continue to win.
Millich was a prolific quarterback at Carthage under Terry Coffman in the late 1970s. Like his predecessor, Millich is a players coach, living and breathing success and failure. Always encouraging his charges, but not afraid to chew somebody out if hes not performing up to standards.
In Alteri, IHC has the perfect man to guide the Cavaliers. A tremendous three-sport athlete in high school, Alteri already has a full-time job as a criminal justice professor at Jefferson Community College, and an almost full-time job as the manager of the Watertown Rams collegiate baseball team in the summer.
But Alteri loves IHC and its athletes, including his own two sons. Hes perhaps the most laid-back of the group, but an intense competitor when need be.
Stevens was an undersized, record-setting running back at Sandy Creek that always played bigger and tougher than his stature. His teams reflect that nature, the underdog who can achieve greatness with hard work and determination.
And then there is Gilfus. Its not as if he has a lot of time on his hands after spending all day as the districts high school principal. But like the others, he loves the kids, loves the game and the teaching aspect of the job. He said several years ago that this coaching gig was only temporary. But hes still at it and has a young Vikings program solidly back on track.
Hard-working staffs, supportive administrations and parents that truly care are also the backbone of these successful programs. But its the coaches that set the tone, and guide these young athletes through some of the most difficult years of their lives.
Dont be surprised if a maximum of five schools end up in the Carrier Dome next weekend.
Sportswriter John Day covers high school football for the Times. He can be reached at email@example.com
Thousands of readers like you have made Northern New York Newspapers the number one ranked website* for local news and sports coverage in the north country.
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We are winos & wana be winos with a semi serious poker problem who like to eat good food. We will be having poker games where we will taste good wines and eat good stuff. (Poker playing will be optional at our larger 70+ attendee potluck events where a large number/most of the party attendees willl be non players & sometimes there is a beginners table). We are fun, friendly, diverse group. If you want to socialize & play poker while drinking good wine & having some good eats you are in the right place. The oranizer has a home in the Bel Air Barrio, (the rich folks live down the hill), with a swim up pool bar, so we will most likely have some pool parties and other mildly organized potluck/wine poker stuff and whatever else we can think of that sounds fun.
The wine & food will either be potluck/bring your own or shared expense/ pitch in some cash. The poker games will most likely be low stakes, participant dealt, non-rake, no-limit hold'em. Non-rake means no one is taking or making any money out of the pot unless they win the hand. Event fees/donations are strictly to enter the house & have nothing to do with actually playing poker. Basically we just want to have fun.
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All Around the Farm
Generator Roller-All Around the Farm
Check out this generator rolling assembly and extending welding table for a truck that a farmer in Loda, Illinois built. Show 804to corners of the plate but the generators mounted on. There's two holes drilled down to the rail of the roller assembly. He slave revolts and put your foot Shenzhen and insecure. The campaign imparted to
Easy Pull Swing Auger-All Around the Farm
A farmer from Indiana invents a simple method for moving swing augers. Show #803
All Around the Farm-Improved Workbench
A farmer from Fertile, MN has some great ideas for improving your workbench.
Multi-purpose Welding Table
Check out welding table invention from Little Rock, IA that you're sure to enjoy.freight. And I intended initially just use him as a direct drive cordless drill but I ended up having to hear them now who would change its profits. The torch on the front this week portable
Heavy-Duty Storage Table-All Around the Farm
Hi my name is Kevin greater from Sibley Iowa. And I wanna show you a handy addition we made our welding cable scrap iron doors. We decided we wanted to keep the scrap iron close by which is obviously the best place under the table. And wanted to keep organized. By flat iron around the highest sincea scrap iron yard hole we've got underneath your for supporters of bowling Alley or lane cable. We got a wonderful shot the reporters deal on top of that. Keep it from catching fire obviously don't support the Jordan Hill while I like your ordinary. Cabinet's only they're made out of use ball bearings from like the end of our grain arbor something like that we save them up. Do this. What truly unique about these shores is I've got over 200 pounds of metal in this war plus my own body weight on the end of that and I just data future . Chop saw a function down in there sleep when you come along. George Ball floor making. Find out more about my welding
Weed Roller - All Around the Farm
See how this farmer from Hankinson, North Dakota built the weed roller. An absorbent rolling carpet distributes the liquid from an attached tank. From Show #801Hello my name is Jeff Collison live outside of Davidson North Dakota . And wanna tell you about a week ago. I came off the idea for the lead roller. From us commercial enough available but it's only build than a four foot wide web and needed something a little wider. You go down between country. Departure and this is made out of business they steel drum sixteen inches in diameter. What they. Absorbent carpet construed to have been above that. There's a tank that holds the liquid that I use from that tank. It goes down to a three quarter inch PVC pipe . In which I have hole she 116. Inch in diameter. Drill. Every inch and a half across the plastic. Liquid basically goes
All Around the Farm: Portable torch
West Union farmer, Steve Miller demonstrates the portable torch he built. From Machinery Show #701.Tiresome farm tires salutes the inventive spirit of the American farmer and his proud to support caller on the farm. Firestone farm tires the leader in the field. I'm Steve Miller from watching Iowa surely this portable worker and we need that torch over to my parents harm to actually moving game Ben button anchor bolts offices just looking at something elegant. Put -- in order to move around without we're about to over that you can use.
All Around the Farm: Stowaway Workbench
Clio, Iowa farmer Zach Robinson describes how he stores his vise and grinder under his workbench. From Show #714good for the rich friend -- do. -- Foley is still home military rule unhinged it. So the full back towards us and middle with food components. -- all of two evils of the firemen and into the lineup to hold her under. To install I'll believe -- found out we're -- and hinges that most of he's a fight for the phils do bomb blew up and -- the venerable looking place. For more information on this and other far renovations get a higher coaches dot com
All Around the Farm: Mega Manure Spreader
This farmer designed and built spreader includes several features that improve upon existing models. From show #711.I would say going to make a manure spreader. We're a beef cattle feed lot operation and we spread primarily driving or it's one of our major sources of fertilizer so we wanted to. Accurate it's. Good job done on the way it's done. It's basically built from scratch you Hershey buy components that tracked undercarriage we bought from land lover the beaters we fabricated the box we fabricated. They hit Charlie Sheen is often eject seventeen dirt straight -- by doing this we were able to move where they -- point is 45 inches forward to get the weight more standard. Under the axle as opposed to back on the draw the one of the major differences between this spreader and one -- by commercially. Is has its own engine on it which drives the beaters I. -- likely this got a 466 diesel on it that drives them for section hydraulic pump . Each section -- one of the beaters in the back unlike a lot of others brokers and have a need for change it pushes the manure off with big hydraulic cylinder. The cylinder is regulated its feet -- last -- control operate them for fifty so the faster you go in the field. The faster it tries to push from manure off and of course he's slowed down the feed rate slows down. Would -- with the idea I guess because we want to something bigger and able to spread more accurately. The
All Around the Farm: Combine Rotor Shop Stove
So what do you do with salvage from an actual come well make still your shot. This farm operation and Trevor can you call. Used to salvaged rotors and basically added the doors in the bottom. In this case to use him as a waste oil for this but you can also use this for burning wood is well. To


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Summary of new Security Features in Servlet 3.0
Servlet 3.0 specification which is part of JavaEE 6 has many new features and some of them are in the area of security. The post by Ron Monzillo gives a high level summary of the security features that he added in the Servlet 3.0 specification. In this post i would like to focus on the aspect of Programmatically adding and configuring security for the servlet. Additionally i would provide links to other posts by me and team members on new security features of servlet 3.0. You can access more information about the API's from the JavaEE 6 Javadocs here.
The ability to programmatically add a servlet to a context is useful for framework developers. For example a framework could declare a controller servlet using this method. The return value of this method is a
ServletRegistration or a
ServletRegistration.Dynamic object which further allows you to setup the other parameters of the servlet like init-params, url-mappings, security-constraints etc.
The addServlet() method on
ServletRegistration.Dynamic can be called from a ServletContextListener and it allows adding a new servlet to the context. Then you can add servlet url-mappings and finally add the security constraints for the servlet by calling
setServletSecurity. The API class that holds the security-constraints is called
Quoting from the specification : "The
javax.servlet.ServletSecurityElement argument to
setServletSecurity is analogous in structure and model to the
ServletSecurity interface of the
@ServletSecurity annotation. As such, the mappings defined in Section 188.8.131.52, "Mapping @ServletSecurity to securityconstraint" on page 13-126, apply analogously to the mapping of a
ServletSecurityElement with contained
HttpConstraintElement and
HttpMethodConstraintElement values, to its equivalent
In short the ServletSecurityElement can be constructed using a HttpConstraintElement which can specify the http-method independent security. Specifically there are different constructors that allow specifying the RolesAllowed (list of roles), the Transport guarantee value (CONFIDENTIAL, NONE) and the EmptyRoleSemantic (PERMIT, DENY). The value of the EmptyRoleSemantic indicates the default authorization semantic that applies (only) when rolesAllowed returns an-empty array. There is one constructor which takes all the three things as arguments and as is obvious it would throw an IllegalArgumentException if the EmptyRoleSemantic is set to DENY but there is a non empty list of roles supplied to it.
So here is some sample code developed using NetBeans 6.8 M2. First i would show the servlet which we are going to add programmatically :
package test;
public class NewServlet extends HttpServlet {
public void init() throws ServletException {
protected void doGet(HttpServletRequest req, HttpServletResponse res)
throws IOException, ServletException {
PrintWriter writer = res.getWriter();
writer.write("GET :Hello, " + req.getRemoteUser() + "\n");
public void doPost(HttpServletRequest req, HttpServletResponse res)
throws IOException, ServletException {
PrintWriter writer = res.getWriter();
writer.write("POST :Hello, " + req.getRemoteUser() + "\n");
protected void doTrace(HttpServletRequest req, HttpServletResponse res)
throws IOException, ServletException {
PrintWriter writer = res.getWriter();
writer.write("TRACE :Hello, " + req.getRemoteUser() + "\n");
And here is the ServletContextListener which adds the above servlet into the context using addServlet method on
package test;
public class NewServletListener implements ServletContextListener {
public void contextInitialized(ServletContextEvent sce) {
System.out.println("NewServletListener.contextInitialized called");
try {
ServletContext sc = sce.getServletContext();
servletCl =
) Class.forName("test.NewServlet");
NewServlet servlet = sc.createServlet(servletCl);
ServletRegistration.Dynamic sr =
(ServletRegistration.Dynamic) sc.addServlet("test.NewServlet", servlet);
//create a security constraint element
HttpConstraintElement constraint = new HttpConstraintElement();
methodConstraints =
new ArrayList
//Allow GET access only to a user in role javaee
methodConstraints.add(new HttpMethodConstraintElement("GET",
new HttpConstraintElement(TransportGuarantee.NONE, new String[]{"javaee"})));
//Allow POST access only to a user in role javaee and when the Transport is Secure
methodConstraints.add(new HttpMethodConstraintElement("POST",
new HttpConstraintElement(TransportGuarantee.CONFIDENTIAL, new String[]{"javaee"})));
//Deny Trace access.
methodConstraints.add(new HttpMethodConstraintElement("TRACE",
new HttpConstraintElement(EmptyRoleSemantic.DENY)));
ServletSecurityElement servletSecurityElement =
new ServletSecurityElement(constraint, methodConstraints);
//set the Servlet Security Constraints on ServletRegistration.Dynamic
} catch (Exception e) {
sce.getServletContext().log("Error during contextInitialized");
throw new RuntimeException(e);
public void contextDestroyed(ServletContextEvent sce) {
The comments in the code above show what security-constraints are being added. Note that we used the default constructor for
HttpConstraintElement this would set the EmptyRoleSemantic value to PERMIT, which means allow access to all. It is equivalent to a
Deploy the attached Netbeans project and specify the following URL in the browser to exercise the doGet method :
Note that the servlet that was added from the context listener had a url-mapping to
/newServlet. Since we have specified that GET access should be allowed only for users in role "
javaee" so the container would force an authentication here. Before deploying the sample make sure you create a new File User in the adming console and make sure that the user belongs to a group with name "
javaee". Then enable Default Principal to Role Mapping under the Security Tab in the admin-console.
Other Security Features in Servlet 3.0
My previous post shows the use of @ServletSecurity element and my team member nithya has posted information on two other features.
1. The authenticate() method on HttpServletRequest
2. The http-method-omission element
There is another method on javax.servlet.HttpServletRequest which we have not talked about :
public void login(String username, String password) throws ServletException; here is the javadoc for this method :
void login(java.lang.String username,
java.lang.String password)
throws ServletException
- Validate the provided username and password in the password validation realm used by the web container login mechanism configured for the
This method returns without throwing a
ServletExceptionwhen the login mechanism configured for the
ServletContextsupports username password validation, and when, at the time of the call to login, the identity of the caller of the request had not been established (i.e, all of
getRemoteUser, and
getAuthTypereturn null), and when validation of the provided credentials is successful. Otherwise, this method throws a
ServletExceptionas described below.
When this method returns without throwing an exception, it must have established non-null values as the values returned by
getRemoteUser, and
- Parameters:
username- The
Stringvalue corresponding to the login identifier of the user.
password- The password
Stringcorresponding to the identified user.
- Throws:
ServletException- if the configured login mechanism does not support username password authentication, or if a non-null caller identity had already been established (prior to the call to login), or if validation of the provided username and password fails.
- Since:
- Servlet 3.0
The login method of the HttpServletRequest interface provides an alternative means for an application to control the look and feel of it's login screens (as an alternative to Form-Based Login).
NOTE: an bug on this site is preventing me from attaching the sample code. Will get back once the bug is fixed.
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- kumarjayanti's blog
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A third-person tactical shooter from Epic, running on the Unreal Engine 3. Gears of War thrusts gamers into a deep and harrowing story of humankind's epic battle for survival against the Locust Horde, a nightmarish race of creatures that surface from the bowels of the planet.This special edition of Gears of War refreshes the original title to gear gamers up for the impending sequel. The disc arrives at a reduced price point and includes bonus Map Packs 1 & 2, Gears of War themes and gamer pics, original trailers, and also Gears of War 2 content that includes two trailers trailers (the Teaser and the Assault trailers) and additional theme and gamer pics.
4.5 out of 5 Recommend It! (44 reviews )
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I GOT INTO HOWARD!!!!!!!!!!!!! So now i'm really torn between howard and Maryland
I actually did get that invitation, but since I"m not planning on going to Maryland I'm more than likely not going. Are you going to go? Have you started looking into housing options?
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