text:
Girls on the Run aims to inspire positive choicesWritten by Sarah Ottney | Editor in Chief | firstname.lastname@example.com
"C'mon, Grace!"
"Good job, Taylor! Keep going!"
The encouraging shouts, mixed with plenty of high-fives, rang out recently at a park near Fort Meigs Elementary School in Perrysburg, where a group of girls in the local chapter of Girls on the Run (GOTR) meets twice a week after school.
Wearing matching pink shirts — and occasionally donning costume items like boas, capes and masquerade-style face masks — the group worked through several running and team-building games with the guidance of three volunteer coaches.
GOTR combines running with an interactive curriculum to inspire self-respect and healthy lifestyles in preteen girls. Topics discussed include bullying, peer pressure and healthy body image with a focus on positive physical, emotional, mental and social development, said Lindsay McKibben, council director of GOTR of Northwest Ohio.
"Women face social pressures at all ages; even elementary-age girls face it. It's starting at that young of an age," McKibben said. "The program really spoke to me in teaching girls some key core values at a young age that are really beneficial as they go through seventh, eighth, ninth, 10th grade and even later on as adults."
The nonprofit organization is active in more than 200 cities in the United States and Canada. GOTR of Northwest Ohio started in 2012 and currently has 13 teams of third-, fourth- and fifth-graders at 11 sites: Monclova Elementary and Whitehouse Primary Schools, Fort Meigs Elementary, Toth Elementary, Woodland Elementary and St. Rose Catholic School and Parish in Perrysburg, Stranahan Elementary and St. Joseph's Catholic School and Parish in Sylvania, Gesu Catholic School and Parish in Toledo and McGregor Elementary and Greenwood Elementary in Washington Local Schools.
The first few weeks of the 10-week program center on building a positive self-image, including speaking positively of yourself and being respectful to yourself, McKibben said.
Next, lessons focus on building a positive environment, such as choosing good friends, how to handle social, peer and media pressure and how gossip and bullying can hurt people.
The final phase is centered around giving back, with each team planning and executing a community service project.
Girls are welcome to repeat the program and girls who came in as shy third-graders will often return the next session as confident leaders, said Heather Hayter, a GOTR coach at Fort Meigs Elementary. Hayter is a kindergarten teacher's assistant at the school and her daughter is a GOTR participant.
"It's really important for people to understand how sensitive girls of this age group are to the need to develop a healthy self-image," Hayter said. "Girls on the Run gives them the tools to develop that image in a positive manner because it addresses the whole individual. They have the tools not just to know what it means to be healthy physically and not fall prey to what they see in the media, but also what it means to be healthy emotionally and socially. Those things are huge."
The benefits extend beyond the girls who directly participate in the program, said coach Taylor Newlove, a Bowling Green State University student.
"What these girls are learning here doesn't just affect these 10 girls; it affects these girls' friends and their friends because they are sharing all these lessons and skills," Newlove said.
GOTR teaches the Stop, Breathe, Listen and Respond (SBLR) method, said Sarah Gabel, program director for GOTR of Northwest Ohio.
"It teaches the girls to be thoughtful in their responses and not just say the first thing that's on their mind," Gabel said.
Courtney Besancon, a 10-year-old fourth-grader at Fort Meigs Elementary, said she uses the SBLR method frequently.
"I've learned when you talk about someone else you can't take it back," Besancon said.
Girls on the Run 5K
Every GOTR season ends with a 5K. The next one is set for June 1 at The Shops at Fallen Timbers and is open to the public. Girls on the Run participants will not be timed, but other runners will be.
"Each girl has a running buddy, which is someone who will run or walk the whole entire 5K with them so we know every girl is safe and has someone cheering for her and available," Gabel said. "It's something to experience. It's a really neat and emotional day, at least for me. I cry every time."
Ten-year-old Layla Malhas, a fifth-grader at Fort Meigs Elementary, said she didn't really like running when she joined GOTR last year — but now she's hoping to join the track team in junior high.
"Once I was with my friends and my coaches were very nice to me, it just felt normal and was fun," Malhas said. "It's just fun to do because I hang out with all my friends and it just encourages me to stay fit and taught me a lot about handling tough situations."
Although several friends decided not to repeat the program, Malhas said she wanted to.
"Running just gives me time to think and to — I know this sounds weird, but — to reflect on life," she said.
She ran her first 5K last fall and will run again on June 1.
"It was tough, but it was fun in the end to have achieved that," Malhas said.
GOTR is funded by grants, donations and participant fees, which are set on a sliding scale based on household income. No one is turned away based on their inability to pay, McKibben said.
She said the group is looking to expand into more schools, including Toledo Public Schools.
"It's a program we want every girl in Northwest Ohio to be able to participate in if they want to," McKibben said. "We don't want this to just be a program for girls who live in the suburbs. It's a program that can benefit every young girl."
Malhas said she's happy that Girls on the Run is looking to expand into other schools — and possibly even branch out to a program for sixth through eighth-graders called Girls on Track.
"That's good. Every elementary school should have it for girls to get involved," Malhas said. "I'm going to be really upset about leaving because it's such a nice experience to have and it taught me a lot."
this is me
Toledo Free Press columnist Jeremy Baumhower is planning an fundraiser for GOTR of Northwest Ohio called this is me. The event, planned to occur Downtown in fall, will feature portraits of local female leaders without makeup. The idea was inspired by actresses such as Demi Lovato and "Game of Thrones" star Emilia Clarke, who have posted public photos of themselves without makeup.
"The message we're teaching our girls is to be proud of yourself, respect yourself and you're beautiful just the way you are, so to showcase some of the successes and awesome impacts adult women are having on the community that have nothing to do with their looks, is great," McKibben said. "We loved the idea and the message that he is trying to share."
For more information, visit www.girlsontherunnwohio.org.
Tags: Demi Lovato, Emilia Clarke, Fort Meigs Elementary, Game of Thrones, Gesu Catholic School and Parish, Girls on the Run, Greenwood Elementary, Jeremy Baumhower, Lindsay McKibben, McGregor Elementary, Monclova Elementary and Whitehouse Primary Schools, Stranahan Elementary, this is me, Toth Elementary, Woodland Elementary and St. Rose Catholic School and Parish in Perrysburg


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Patients in University Hospital of Brooklyn now have secure online access to their health information.
MyDownstateCare is available to Emergency Room, Ambulatory Surgery, and Inpatients, and will soon expand to all patients.Find out more »
Update: Reach Out and Read of Greater New York Takes its Literacy Campaign to Downstate's Infant and Child Learning CenterFind out more »
The LCME, administered by the Association of American Medical Colleges and the American Medical Association, is the nationally recognized authority for medical education programs leading to the MD degree.
University Hospital of SUNY Downstate is a leader in advanced medical care. It is the only hospital in Brooklyn backed by the expertise of an outstanding medical school and the research facilities of a world class academic center.Find out more »
There are a million and a half children in New York City. Which means a million and a half throats and noses and three million ears for parents to worry about.Find out more »
We know what parents worry about: your child is sick and you can't reach your doctor. At times like those remember University Hospital SUNY Downstate and our pediatric emergency rooms.Find out more »
- SUNY Downstate Faculty, Graduate Student Receive Recognition from the American Heart Association
- Researchers Identify New Spectrum Disorder Called ALPIM Syndrome
Clarifies Relationship between Anxiety and Physical Disorders
- Researchers Identify Link between Autoimmune Diseases, Medications, and a Dangerous Heartbeat Condition
Screening and Counseling Recommended to Decrease Risk of Life-threatening Arrhythmias
- Dr. Carlos N. Pato Named Dean of the College of Medicine at SUNY Downstate Medical Center
- SUNY Board of Trustees Names Four Downstate Faculty Members to Distinguished Professor Ranks
- SUNY Downstate's University Hospital of Brooklyn Receives Get With The Guidelines-Stroke Gold Plus Quality Achievement Award with Target: Stroke Honor Roll Elite
Award Demonstrates University Hospital of Brooklyn's Commitment to Quality Care for Stroke Patients
The Statewide Financial System (SFS) Postponed: The 3-week shutdown of the Statewide Financial System, originally scheduled for March 20th to April 12th, has been postponed until October 2015. If you have any questions, please contact Martin Deane at extension 3199
Transitioning SUNY Downstate: Downstate is restructuring in order to serve Brooklyn better and achieve long-term financial stability. Click here for more information on Downstate's Sustainability Plan.
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subset: commoncrawl


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Arizona Cardinals
Cards' defense continues to earn praise
November 29, 2012: Rex Ryan the lastest in a long line to speak highly of the defense
It started Week 1, and it's continued each week thereafter: NFL head coaches praising the Cardinals defense when speaking to the local media on the weekly conference call.
"They're really a problem," Seattle's Pete Carroll said.
"They're impressive," Miami's Joe Philbin said.
"They will hit you," Buffalo's Chan Gailey said.
"They create havoc," Minnesota's Leslie Frazier said.
Call it coachspeak if you want -- Bill Belichick rattled off nine different Cardinals defenders during his chat with reporters, but the message is always the same: praise and respect for one of the top defenses in the league.
"You see one of the best units in the National Football League is what you see (on film)," Andy Reid said before the Eagles visited University of Phoenix Stadium. "It's hard to find weaknesses in them."
The Cardinals defense has been one of the few bright spots in a season growing dim with each passing Sunday.
This week the unit was again a hot topic when Jets head coach Rex Ryan held his conference call:
"I look at the Arizona Cardinals, you look at that defense, and it's one of the best defenses in the National Football League and an extremely talented group," he said unsolicited. "To me, you have four or five Pro-Bowl players on that defense. There are two big guys up front with (Darnell) Dockett and (Calais) Campbell, and then you have Patrick Peterson, that might be one of the rarest athletes I think I've ever seen."
It's this kind of talk -- from his peers, that has defensive coordinator Ray Horton among the top names on the list of future head coach candidates.
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- Jen Welter, Cardinals assistant coach - Tuesday July 28Welter talks about the historical significance of her hire, and how she'll approach the job
- Bickley Blast - Tuesday July 28The Cardinals made a ground breaking coaching hire
- Former Arizona Cardinals Pro Bowler Bertrand Berry - Tuesday July 28Bertrand Berry talks about the Cardinals hiring Jen Welter as the first woman coach in NFL history.
- Glenn Parker, Pac-12 and Cardinals analyst - Tuesday July 28Glenn Parker discusses new Cardinals coach Jen Welter and the strength of the Pac-12 South.
- Hardware - Monday July 27The Sign of Our Times award, the 2nd Place Isn't So Bad award and more


text:
Buy with confidence
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More from ilike Organic Skin Care
ilike Lemon Cleansing Milk
ilike Stonecrop Toner
This very unique soft treatment from ilike organic skin care gently exfoliates, hydrates and smoothes the sensitive, problematic, inflamed, dehydrated and mature skin. So gentle, that it can even be used to clarify sunburnt or rosacea skin, or the eye area, and even solves ingrown stubble problems on men. Due to its high sulphur content it strengthens the keratin layer and effectively treats fungal infections. With its organic herbal oils it also eliminates surface wrinkles and cleans off easily. Skin Types / Skin Conditions: sunburn dry skin skin sensitivity acne, seborrhea rosacea wrinkles chloasma, age spots or other blemishes male skin conditions inflamed follicles after waxing or shaving oil- and water deficient sensitive skin sunburn problematic skin mature skin types eye area (around closed eyes!) for men facials in case of stubble rash Effects: gently removes the dead keratin cells hydrates strengthens the keratin layer due to its sulphur content anti-inflammatory effect eliminates fine lines smoothes slightly dries


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- If you're running Policyd-1.8, please stay with it right now. Be patient and wait for our upgrade tutorial if you want to upgrade to Cluebringer. P.S. Policyd doesn't provide upgrade tutorial officially.
- 2014-01-08: Remove backup mx related sections, it's wrong.
- 2013-12-17: New section: Alter Cluebringer database.
- 2013-12-17: public release.
- 2013-11-30: Check whether hosted domain is backup mx or not in Postfix transport map query.
- 2013-09-14: Add cron job to cleanup Cluebringer database.
- 2013-09-2: Enable Opportunistic TLS support in Postfix when sending mail to remote SMTP server.
- 2013-08-25: Upgrade Roundcube to 0.9.3.
General (All backends must apply these steps)
Update /etc/iredmail-release with iRedMail version number
iRedMail stores the initial version number in /etc/iredmail-release after installation completed, it's recommended to update this file after you upgraded iRedMail, so that you can know which version of iRedMail you're running. For example:
|File: /etc/iredmail-release
Upgrade Roundcube webmail to the latest 0.9.5
Please follow Roundcube official tutorial to upgrade Roundcube webmail to the latest 0.9.2 immediately: http://trac.roundcube.net/wiki/Howto_Upgrade
Upgrade iRedAPD (Postfix policy server) to the latest 1.4.2
Please follow below tutorial to upgrade iRedAPD to the latest stable release:
Upgrade iRedAdmin (open source edition) to the latest 0.3
Please follow this tutorial to upgrade iRedAdmin open source edition to the latest stable release: How to upgrade iRedAdmin (open source edition) to the latest stable release
Upgrade phpMyAdmin to the latest stable release
Please follow this short tutorial to upgrade phpMyAdmin to the latest stable release: http://docs.phpmyadmin.net/en/latest/setup.html#upgrading-from-an-older-version
Enable Opportunistic TLS support in Postfix when sending mail to remote SMTP server
This feature is used to secure your mail transaction when sending email from your iRedMail server (Postfix) to remote SMTP server. Refer to Postfix document for more technical details: http://www.postfix.org/postconf.5.html#smtp_tls_security_level
- Add required parameters in Postfix:
# postconf -e smtp_tls_security_level='may' # postconf -e smtp_tls_CAfile='$smtpd_tls_CAfile'
- Then restart Postfix service:
# ---- On Linux ---- # /etc/init.d/postfix restart # ---- On FreeBSD ---- # /usr/local/etc/rc.d/postfix restart # ---- On OpenBSD ---- # /etc/rc.d/postfix restart
Alter Cluebringer database
IMPORTANT NOTE: This step is required if you're running Cluebringer. And please skip this step if you're running Policyd-1.8.
For better management, we have to do some modification on Cluebringer database, for example, add new columns, add new indexes. We have a SQL file you can use to finish this in one step.
Please download below two SQL files shipped in iRedMail-0.8.6, and save it as file /root/extra.sql, and /root/column_character_set.mysql:
- https://bitbucket.org/zhb/iredmail/raw/4d7b14fc40bb2467fb4efcc4ce08ac9fc037224c/iRedMail/samples/cluebringer/extra.sql
- https://bitbucket.org/zhb/iredmail/raw/4d7b14fc40bb2467fb4efcc4ce08ac9fc037224c/iRedMail/samples/cluebringer/column_character_set.mysql
For MySQL, please login to MySQL server as 'root' user and import this sql file:
# mysql -uroot -p mysql> USE cluebringer; mysql> SOURCE /root/extra.sql; mysql> SOURCE /root/column_character_set.mysql;
For PostgreSQL, please login to PostgreSQL admin user 'postgres' and import this sql file:
# su - postgres $ psql -d cluebringer sql> \i /root/extra.sql;
That's all.
Add cron job to cleanup Cluebringer database
IMPORTANT NOTE: This step is required if you're running Cluebringer. And please skip this step if you're running Policyd-1.8.
We have to delete old/expired entries from database to keep SQL query fast.
NOTE: On RHEL/CentOS and openSUSE, you must update cluebringer package to '2.0.13-3' with yum first:
# yum update cluebringer
- Add cron job with command 'crontab':
# crontab -e -u root
Now add cron job:
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1 3 * * * /usr/sbin/cbpadmin --config=/etc/policyd/cluebringer.conf --cleanup > /dev/null
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1 3 * * * /usr/sbin/cbpadmin --config=/etc/cluebringer/cluebringer.conf --cleanup > /dev/null
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1 3 * * * /usr/local/bin/cbpadmin --config=/usr/local/etc/cluebringer.conf --cleanup > /dev/null
- On OpenBSD: not required since OpenBSD doesn't have cluebringer package installed.


text:
This message board is only an archive. Click here to go to the current message board.
I'm up to the part where Jackie gives Barbie the note. This book, for me, is like visiting the Derry/Castle Rock area again. Been a long time since I've been there, LOL, and it felt good to go "home". I'm only able to read at night after work, but I read for a couple of hours a night and I can't hit the forward button on my Kindle fast enough. Thank you, Mr. King, for this book. I'm living in a small town now and I could see a couple of our previous aldermen/Selectmen in this book. I think that's what makes this book so great--the fact that anyone could turn into the characters of this book so quickly. Can't wait to find out how they get out from "Under the Dome."
I liked this book a lot. I can honestly say that I have enjoyed every book of King's--but some speak to me more than others. This is not my favorite SK book--The Stand is, without a doubt. Although 11 22 63 is now right up there too.
Honestly, I think it is pretty amazing how many times he's hit it out of the park. No other writer has done as well--not by a long shot.
For me, this is his best that I've read so far. It really spoke to me. I could not put Under the Dome down, total home run.
Despite King's political skew, I did very much enjoy this thinly veiled, "Never Let a Crisis Go To Waste" book. As far as what some are calling a "weak" ending, did they want some sort of "truther" conspiracy to be responsible for putting a dome over an entire town? Not even the most hard-core idealogues whould buy that one. Thoughtless aliens were just fine with me and the comparison to an ant hill was satisfying and thought provoking. Thanks, Mr. King. I learn a lot from you.
UTD is a great read but just got bumped out of my top 3 by 11/22/63
UTD is my favorite at this moment. I just loved to read that big a** book!!
I loved it. FromI didn't want it to end. I don't think there is an SK book I don't like, only ones I haven't read yet. (I realized yesterday that I never read Firestarter. Gotta get on that.)
the bird being sliced in half to the leatherheads


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Vt. man pleads to drug chargesNovember 28,2013WHITE RIVER JUNCTION — A Vermont man has pleaded guilty to three drug possession charges, two retail theft counts and several other offenses.
The drug charges against Philip Carvalho, 23, of Windsor stem from a May 31 arrest after officers with the Windsor Police Department said they seized evidence of narcotics, drug paraphernalia and weapons in his home.
The Eagle Times reports that in addition to a credit card fraud charge from 2012, Carvalho pleaded guilty to retail theft from Cumberland Farms on Sept. 9 when he attempted to steal beer and another on Sept. 16 after leaving the Price Chopper without paying for some drinks.
Carvalho also pleaded guilty to an Oct. 8 disorderly conduct charge at the Windsor Rite Aid and resisting arrest on Oct. 14.
A sentencing hearing is expected next month.MORE IN This Just InThe family of a Connecticut man who was killed in a car accident on Route 4 last Friday night is... Full StoryAssociated Press Full StoryIt seems like I just started to warm up from last winter and I see back-to-school displays. Full Story
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- RICHARD'S POOR ALMANACK: On this day 1739, 'Richard Palmer' identified in prison at York Castle as the notorious outlaw DICK TURPIN; IN 1836, Battle of the Alamo begins near San Antonio de Bexar, Texas; 1896, the Tootsie Roll invented by LEO HIRSCHFELD.
- RICHARD'S POOR ALMANACK: On this day in 1472, Orkney, Shetland islands put up as collateral by Norway to Scotland in lieu of dowry for MARGARET OF DENMARK on her marriage with JAMES III, king of Scotland; 1962, JOHN GLENN first American to orbit Earth.
- TOMORROW'S HEADLINES TODAY: City mayoral candidates debate campaign issues; Hartford, Conn., woman still missing; Neal Goswami reports attempts to legislate suicide; local woman loses 100 pounds through TOPS program.
- RICHARD'S POOR ALMANACK: On this day in 1878, JOHN TUNSTALL murdered near Lincoln, New Mexico, by the outlaw JESSE EVANS; in 1930, ELM FARM OLLIE first cow to fly in aircraft, first to be milked airborne; 1955, nuke test WASP; '79, snow in Sahara.
- TOMORROW'S HEADLINES TODAY: Rutland Herald News Editor Alan J. Keays and staff writer Gordon Dritschilo discuss stories planned for the February 18, 2015, edition of the newspaper: Winter budgets maxed, legal marijuana, Springfield bank job, USPS slowdown
- RICHARD'S POOR ALMANACK: On this day in 1249 AD, ANDRE of LONGJUMEAU is dispatched by LOUIS IX of France to meet the KHAGAN, ruler of the Mongol Empire; in 1804, during 1st Barbary War, STEPHEN DECATUR scuttles the pirate-held USS Philadelphia in Tripoli.


text:
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text:
The present invention relates to an enhanced sequential or non-sequential atomic layer deposition (ALD) apparatus and technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method; and, 4) providing a means of improved radical generation and delivery.
It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. [37 C.F.R. § 1.72(b)].
1. A system for ion-induced deposition of a film onto a substrate, said system comprising:
a main chamber containing a plasma generation chamber for generating a plasma;
said main chamber also containing a deposition chamber for depositing said film on said substrate;
a distribution showerhead located between said plasma generation chamber and said deposition chamber;
said plasma generation chamber coupled to receive at least one feed gas to form said plasma for generation of ions;
said plasma generation chamber also coupled to receive at least one feed gas to react with said plasma for generation of radicals; and
said deposition chamber coupled to receive at least one precursor gas to react with said ions and said radicals to form said film on said substrate.
2. The system of
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12. A system for isolating a plasma when depositing a film onto a substrate comprising:
a main chamber containing a plasma generation chamber for generating said plasma and a deposition chamber for depositing said film;
a distribution showerhead located between said plasma generation chamber and said deposition chamber;
said plasma generation chamber coupled to receive at least one feed gas for ion generation and at least one feed gas for radical generation; and
said deposition chamber coupled to receive at least one precursor gas.
13. The system of
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46. A system for generating a plasma for depositing a film onto a substrate, said system comprising:
a plasma generation source;
a plasma generation chamber coupled to said plasma generation source;
a deposition chamber; and
a distribution showerhead separating said plasma generation chamber from said deposition chamber.
47. The system of
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59. A method for depositing a film onto a substrate in an evacuated chamber comprising:
introducing at least one ion generating feed gas into said chamber;
introducing at least one radical generating gas into said chamber;
generating a plasma;
generating ions from said ion generating feed gas and said plasma;
generating radicals from said radical generating gas and said plasma;
introducing at least one reactant gas into said chamber;
adsorbing at least one monolayer of said reactant gas on said substrate;
exposing said substrate to said ions and said radicals;
modulating said ions; and
reacting said monolayer with said ions and said radicals to deposit said film.
60. The method of
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72. The method of claim 71, wherein modulation in said ion flux is modulated in a way selected from the group consisting of modulating a flow of said ion generating feed gas, modulating a power of said plasma, modulating said exposure to said ions, and modulating the relative movement between said plasma and said substrate.
73. The method of
[0001] 1. Background of the Invention
[0002] The present invention relates generally to the field of advanced thin film deposition methods commonly used in the semiconductor, data storage, flat panel display, as well as allied or other industries. More particularly, the present invention relates to an enhanced sequential or non-sequential atomic layer deposition (ALD) apparatus and technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive thin films.
[0003] The disadvantages of conventional ALD are additionally discussed in a copending application with the same assignee entitled "Method and Apparatus for Improved Temperature Control in Atomic Layer Deposition", which is hereby incorporated by reference in its entirety and may be found as copending provisional, Application No. 60/251,795.
[0004] 2. Brief Description of the Prior Art
[0005] As integrated circuit (IC) dimensions shrink and the aspect ratios of the resulting features increase, the ability to deposit conformal, ultra-thin films on the sides and bottoms of high aspect ratio trenches and vias becomes increasingly important. These conformal, ultra-thin films are typically used as "liner" material to enhance adhesion, prevent inter-diffusion and/or chemical reaction between the underlying dielectric and the overlying metal, and promote the deposition of a subsequent film.
[0006] In addition, decreasing device dimensions and increasing device densities has necessitated the transition from traditional CVD tungsten plug and aluminum interconnect technology to copper interconnect technology. This transition is driven by both the increasing impact of the RC interconnect delay on device speed and by the electromigration (i.e., the mass transport of metal due to momentum transfer between conducting electrons and diffusing metal atoms, thereby affecting reliability) limitations of aluminum based conductors for sub 0.25 μm device generations. Copper is preferred due to its lower resistivity and higher (greater than 10 times) electromigration resistance as compared to aluminum. A single or dual damascene copper metallization scheme is used since it eliminates the need for copper etching and reduces the number of integration steps required. However, the burden now shifts to the metal deposition step(s) as the copper must fill predefined high aspect ratio trenches and/or vias in the dielectric. Electroplating has emerged as the copper fill technique of choice due to its low deposition temperature, high deposition rate, and potential low manufacturing cost.
[0007] Two major challenges exist for copper wiring technology: the barrier and seed layers. Copper can diffuse readily into silicon and most dielectrics. This diffusion may lead to electrical leakage between metal wires and poor device performance. An encapsulating barrier layer is needed to isolate the copper from the surrounding material (e.g., dielectric or Si), thus preventing copper diffusion into and/or reaction with the underlying material (e.g. dielectric or Si). In addition, the barrier layer also serves as the adhesion or glue layer between the patterned dielectric trench or via and the copper used to fill it. The dielectric material can be a low dielectric constant, i.e. low-k material (used to reduce inter- and intra-line capacitance and cross-talk) which typically suffers from poorer adhesion characteristics and lower thermal stability than traditional oxide insulators. Consequently, this places more stringent requirements on the barrier material and deposition method. An inferior adhesion layer will, for example, lead to delamination at either the barrier-to-dielectric or barrier-to-copper interfaces during any subsequent anneal and/or chemical mechanical planarization (CMP) processing steps leading to degradation in device performance and reliability. Ideally, the barrier layer should be thin, conformal, defect free, and of low resistivity so as to not compromise the conductance of the copper metal interconnect structure.
[0008] In addition, electroplating fill requires a copper seed layer, which serves to both carry the plating current and act as the nucleation layer. The preferred seed layer should be smooth, continuous, of high purity, and have good step coverage with low overhang. A discontinuity in the seed layer will lead to sidewall voiding, while gross overhang will lead to pinch-off and the formation of top voids.
[0009] Both the barrier and seed layers which are critical to successful implementation of copper interconnects require a means of depositing high purity, conformal, ultra-thin films at low substrate temperatures.
[0010] Physical vapor deposition (PVD) or sputtering has been adopted as the preferred method of choice for depositing conductor films used in IC manufacturing. This choice has been primarily driven by the low cost, simple sputtering approach whereby relatively pure elemental or compound materials can be deposited at relatively low substrate temperatures. For example, refractory based metals and metal compounds such as tantalum (Ta), tantalum nitride (TaNx), other tantalum containing compounds, tungsten (W), tungsten nitride (WNx), and other tungsten containing compounds which are used as barrier/adhesion layers can be sputter deposited with the substrate at or near room temperature. However, as device geometries have decreased, the step coverage limitations of PVD have increasingly become an issue since it is inherently a line-of-sight process. This limits the total number of atoms or molecules which can be delivered into the patterned trench or via. As a result, PVD is unable to deposit thin continuous films of adequate thickness to coat the sides and bottoms of high aspect ratio trenches and vias. Moreover, medium/high-density plasma and ionized PVD sources developed to address the more aggressive device structures are still not adequate and are now of such complexity that cost and reliability have become serious concerns.
[0011] Chemical vapor deposition (CVD) processes offer improved step coverage since CVD processes can be tailored to provide conformal films. Conformality ensures the deposited films match the shape of the underlying substrate, and the film thickness inside the feature is uniform and equivalent to the thickness outside the feature. Unfortunately, CVD requires comparatively high deposition temperatures, suffers from high impurity concentrations, which impact film integrity, and have higher cost-of-ownership due to long nucleation times and poor precursor gas utilization efficiency. Following the tantalum containing barrier example, CVD Ta and TaN films require substrate temperatures ranging from 500° C. to over 800° C. and suffer from impurity concentrations (typically of carbon and oxygen) ranging from several to tens of atomic % concentration. This generally leads to high film resistivities (up to several orders of magnitude higher than PVD), and other degradation in film performance. These deposition temperatures and impurity concentrations make CVD Ta and TaN unusable for IC manufacturing, in particular for copper metallization and low-k integration.
[0012] Chen et al. ("Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallization", J. Vac. Sci. Technol. B 17(1), pp. 182-185 (1999); and "Low temperature plasma-promoted chemical vapor deposition of tantalum from tantalum pentabromide for copper metallization", J. Vac. Sci. Technol. B 16(5), pp. 2887-2890 (1998)) have demonstrated a plasma-assisted (PACVD) or plasma-enhanced (PECVD) CVD approach using tantalum pentabromide (TaBr5) as the precursor gas to reduce the deposition temperature. Ta and TaNx films were deposited from 350° C. to 450° C. and contained 2.5 to 3 atomic % concentration of bromine. Although the deposition temperature has been reduced by increased fragmentation (and hence increased reactivity) of the precursor gases in the gas-phase via a plasma, the same fragmentation leads to the deposition of unwanted impurities. Gas-phase fragmentation of the precursor into both desired and undesired species inherently limits the efficacy of this approach.
[0013] Recently, atomic layer chemical vapor deposition (AL-CVD) or atomic layer deposition (ALD) has been proposed as an alternative method to CVD for depositing conformal, ultra-thin films at comparatively lower temperatures. ALD is similar to CVD except that the substrate is sequentially exposed to one reactant at a time. Conceptually, it is a simple process: a first reactant is introduced onto a heated substrate whereby it forms a monolayer on the surface of the substrate. Excess reactant is pumped out. Next a second reactant is introduced and reacts with the first reactant to form a monolayer of the desired film via a self-limiting surface reaction. The process is self-limiting since the deposition reaction halts once the initially adsorbed (physi- or chemi-sorbed) monolayer of the first reactant has fully reacted with the second reactant. Finally, the excess second reactant is evacuated. The above sequence of events comprises one deposition cycle. The desired film thickness is obtained by repeating the deposition cycle the required number of times.
[0014] In practice, ALD is complicated by the painstaking selection of a process temperature setpoint wherein both: 1) at least one of the reactants sufficiently adsorbs to a monolayer and 2) the surface deposition reaction can occur with adequate growth rate and film purity. If the substrate temperature needed for the deposition reaction is too high, desorption or decomposition of the first adsorbed reactant occurs, thereby eliminating the layer-by-layer process. If the temperature is too low, the deposition reaction may be incomplete (i.e., very slow), not occur at all, or lead to poor film quality (e.g., high resistivity and/or high impurity content). Since the ALD process is entirely thermal, selection of available precursors (i.e., reactants) that fit the temperature window becomes difficult and sometimes unattainable. Due to the above-mentioned temperature related problems, ALD has been typically limited to the deposition of semiconductors and insulators as opposed to metals. ALD of metals has been confined to the use of metal halide precursors. However, halides (e.g., Cl, F, Br) are corrosive and can create reliability issues in metal interconnects.
[0015] Continuing with the TaN example, ALD of TaN films is confined to a narrow temperature window of 400° C. to 500° C., generally occurs with a maximum deposition rate of 0.2 Å/cycle, and can contain up to several atomic percent of impurities including chlorine and oxygen. Chlorine is a corrosive, can attack copper, and lead to reliability concerns. The above process is unsuitable for copper metallization and low-k integration due to the high deposition temperature, slow deposition rate, and chlorine impurity incorporation.
[0016] In conventional ALD of metal films, gaseous hydrogen (H2) or elemental zinc (Zn) is often cited as the second reactant. These reactants are chosen since they act as a reducing agent to bring the metal atom contained in the first reactant to the desired oxidation state in order to deposit the end film. Gaseous, diatomic hydrogen (H2) is an inefficient reducing agent due to its chemical stability, and elemental zinc has low volatility (e.g., it is very difficult to deliver sufficient amounts of Zn vapor to the substrate) and is generally incompatible with IC manufacturing. Unfortunately, due to the temperature conflicts that plague the ALD method and lack of kinetically favorable second reactant, serious compromises in process performance result.
[0017] In order to address the limitations of traditional thermal or pyrolytic ALD, radical enhanced atomic layer deposition (REALD, U.S. Pat. No. 5,916,365) or plasma-enhanced atomic layer deposition has been proposed whereby a downstream radio-frequency (RF) glow discharge is used to dissociate the second reactant to form more reactive radical species which drives the reaction at lower substrate temperatures. Using such a technique, Ta ALD films have been deposited at 0.16 to 0.5 Å/cycle at 25° C., and up to approximately 1.67 Å/cycle at 250° C. to 450° C. Although REALD results in a lower operating substrate temperature than all the aforementioned techniques, the process still suffers from several significant drawbacks. Higher temperatures must still be used to generate appreciable deposition rates. Such temperatures are still too high for some films of significant interest in IC manufacturing such as polymer-based low-k dielectrics that are stable up to temperatures of only 200° C. or less. REALD remains a thermal or pyrolytic process similar to ALD and even CVD since the substrate temperature provides the required activation energy for the process and is therefore the primary control means for driving the deposition reaction.
[0018] In addition, Ta films deposited using REALD still contain chlorine as well as oxygen impurities, and are of low density. A low density or porous film leads to a poor barrier against copper diffusion since copper atoms and ions have more pathways to traverse the barrier material. Moreover, a porous or under-dense film has lower chemical stability and can react undesirably with overlying or underlying films, or with exposure to gases commonly used in IC manufacturing processes.
[0019] Another limitation of REALD is that the radical generation and delivery is inefficient and undesirable. RF plasma generation of radicals used as the second reactant such as atomic H is not as efficient as microwave plasma due to the enhanced efficiency of microwave energy transfer to electrons used to sustain and dissociate reactants introduced in the plasma. Furthermore, having a downstream configuration whereby the radical generating plasma is contained in a separate vessel located remotely from the main chamber where the substrate is situated and using a small aperture to introduce the radicals from the remote plasma vessel to the main chamber body significantly decreases the efficiency of transport of the second radical reactant. Both gas-phase and wall recombination will reduce the flux of desired radicals that can reach the substrate. In the case of atomic H, these recombination pathways will lead to the formation of diatomic H2, a far less effective reducing agent. If the plasma used to generate the radicals was placed directly over the substrate, then the deposition of unwanted impurities and particles can occur similarly to the case of plasma-assisted CVD.
[0020] Finally, ALD (or any derivative such as REALD) is fundamentally slow since it relies on a sequential process whereby each deposition cycle is comprised of at least two separate reactant flow and evacuation steps, which can occur on the order of minutes with conventional valve and chamber technology. Significant improvements resulting in faster ALD are needed to make it more suitable for commercial IC manufacturing.
[0021]FIG. 1 is a schematic of a deposition system suitable for modulated ion-induced atomic layer deposition (MII-ALD).
[0022]FIG. 2A depicts a timing sequence for an improved ALD method incorporating periodic exposure of the substrate to ions.
[0023]FIG. 2B is another timing sequence for an improved ALD method incorporating periodic exposure of the substrate to ions.
[0024]FIG. 3A shows the MII-ALD method utilizing ion flux modulation to vary the substrate exposure to ions.
[0025]FIG. 3B shows the timing of the MII-ALD method utilizing ion energy modulation to vary the substrate exposure to ions by varying the substrate bias.
[0026] FIGS. 4A-F show methods of modulating the MII-ALD process.
[0027]FIG. 5 shows an electrostatic chuck (ESC) system suitable for modulating the ion energy in the MII-ALD process: a) in topological form; and, b) as an equivalent electrical circuit.
[0028] The present invention relates to methods and apparatuses useable for the deposition of conformal solid thin films of one or more elements at low temperature. More particularly, the present invention relates to an enhanced sequential or, more preferably, non-sequential atomic layer deposition apparatus and technique suitable for deposition of barrier layers, adhesion layers, seed layers, and low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive thin films.
[0029] More specifically, the present invention resolves the previously presented problems encountered in the prior art (e.g., REALD) by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method; and, 4) providing a means of improved radical generation and delivery.
[0030] Improvements to ALD processing, e.g., the REALD mentioned previously, remain "thermal" or "pyrolytic" processes since the substrate temperature provides the required activation energy and is the primary control knob for driving the deposition reaction. Alternatively, we propose a novel approach by providing the required activation energy from a "non-thermal" source. In particular, we propose driving the deposition reaction primarily via substrate exposure to impinging ions wherein the ions are used to deliver the necessary activation energy to the near surface atoms and adsorbed reactant(s) via collision cascades.
[0031] Conventional deposition processes used in the semiconductor industry (including ALD) typically deposit materials at temperatures in the range of 300-600° C. The deposition method described herein can be effected at much lower temperatures, in practice as low as 25° C. or below. Note that this process is ion-triggered (i.e., ion-induced) as opposed to ion-assisted in that deposition will not generally occur without ion bombardment since ions are used as the primary means of providing the activation energy required for deposition. A primary benefit of ion-induced processing is the deposition of higher density films of superior purity and adhesion properties. This result occurs due to ion bombardment induced densification.
[0032]FIG. 1 illustrates a deposition system suitable for modulated ion-induced atomic layer deposition (MII-ALD). The invention described herein also incorporates a means of modulating the exposure of the substrate to ions. By modulating 1) the ion flux; 2) the energy of the ions striking the substrate; or a combination of (1) and (2), the deposition reaction can be precisely toggled "on" or "off". If the ion flux or energy is at a "low" state, then no deposition results or deposition occurs so slowly that essentially no deposition results. If the impinging ion flux or energy is at a "high" state, then deposition occurs. Since the substrate (which may be a "bare" substrate, e.g., a silicon wafer before any films have been deposited, or it may be a substrate which may already have had one or more films deposited on its surface) 181 is preferably maintained at a low substrate temperature, the first and second reactants do not thermally react with any appreciable rate or do not react at all. Instead, the deposition reaction only takes place when either the ion flux or ion energy is toggled to a suitable "high state". The desired film thickness is built up by repeating the ion pulses (either of flux or energy) the required number of cycles. Furthermore, since modulation of the ion flux or ion energy can occur on a much faster time scale (KHz range) than the conventional valve and pump technology used in ALD (up to minutes per cycle), this deposition method is more suitable for commercial IC manufacturing. This method shall be referred to herein as modulated ion-induced atomic layer deposition (MII-ALD).
[0033] In addition, the present invention also improves upon the prior art by employing a microwave generated plasma 172 substantially contained in the main chamber body 190 that is isolated via a distribution showerhead 171 comprised of a series or array of apertures 175 which resolves the issues of radical generation and delivery, while preventing gas-phase precursor cracking (i.e., fragmentation or breaking down the precursor gas into its constituent elements) and impurity and/or particle generation directly above the wafer 181. The plasma is contained within the plasma source chamber 170 itself and is not in direct communication with the substrate 181. In MII-ALD, the same plasma is used to generate both ions 177 (used to drive the surface reactions) and radicals 176 (used as the second reactant), but is isolated from the first reactant 100 which typically contains both the principal element(s) desired in the end film, but also unwanted impurity containing byproducts. Therefore, primarily only the radicals 176 and ions 177 are able to travel through the showerhead apertures 175. The plasma 172 is essentially contained within the plasma source chamber and does not intermingle with the precursor gases 100, 120.
[0034] The present invention utilizes ion imparted kinetic energy transfer rather than thermal energy (e.g., REALD, ALD, PECVD, CVD, etc.) to drive the deposition reaction. Since temperature can be used as a secondary control variable, with this enhancement films can be deposited using MII-ALD at arbitrarily low substrate temperatures (generally less than 350° C.). In particular, films can be deposited at or near room temperature (i.e., 25° C.) or below.
[0035] The system of FIG. 1 contains a substantially enclosed plasma source chamber 170 located in substantial communication with or, more preferably, substantially within a main chamber body 190. The plasma 172 is used to dissociate feed gases 130, 110 to generate both ions 177 and radicals 176. Typical feed gases 130 used for ion generation include, but are not restricted to Ar, Kr, Ne, and Xe. Typical feed gases 110 (e.g., precursor B) used for radical generation include, but are not restricted to H2, O2, N2, NH3, and H2O vapor. The ions 177 are used to deliver the energy needed to drive surface reactions between the first adsorbed reactant and the generated radicals 176. Inductively coupled RF (e.g., 400 KHz, 2 MHz, 13.56 MHz, etc.) power 160 can be used to generate the plasma via solenoidal coils located within or outside of the plasma chamber (not shown in FIG. 1). More preferably, microwave (e.g., generally 2.45 GHz or higher frequencies) power 160 is coupled to the plasma source chamber 170 via a suitable means such as a waveguide or coaxial cable. Microwave energy can be more efficiently transferred to ionizing electrons, leading to higher ionization fractions. This is of particular importance in the generation of radicals 176 (i.e., a chemical fragment of a larger molecule) such as atomic hydrogen, or any of a number of other reactive groups such as nitrogen atoms (N), oxygen atoms (O), OH molecules, or NH molecules, or a combination thereof. These radicals serve as the second reactant. Microwave or radio-frequency (RF) power 160 is coupled to the plasma 172 via a dielectric material 173, which may be a dielectric window such as quartz embedded in the chamber wall, or it may be empty space in the case of a microwave or RF antenna located within the plasma chamber.
[0036] In addition, a distribution showerhead 171, containing a series or array of apertures 175 through which ions 177 and radicals 176 are delivered to the substrate 181, isolates the main process chamber 180 from the plasma source chamber 170. A pressure drop (for example, a 5 or 10 times decrease in pressure, with the main processing chamber 180 being at the lower pressure) is thereby created between the plasma source chamber 170 and the main processing chamber 180 to project the ions 177 and radicals 176 to the substrate 181 via the distribution showerhead 171. The plasma source chamber 170 is generally of comparable diameter to the main chamber body 190 to enable large area exposure of the sample. The size, aspect ratio, and distribution of the showerhead apertures 175 can be optimized to provide uniform exposure of the substrate 181 and the desired ion 177 to radical 176 ratio. The distance between this showerhead 171 and the substrate 181 may vary depending on the application. For the processing of wafers in the IC industry, this distance is preferably at most two wafer diameters and more preferably less than or equal to one half a wafer diameter.
[0037] Having a substantially enclosed plasma generation chamber 170 situated within the main chamber 190 allows efficient and uniform delivery of ions 177 and radicals 176 to the substrate 181. In addition, by isolating the plasma 172 from the main chamber 180 prevents gas-phase cracking of the first reactant 100 (e.g., precursor A), which is introduced directly to the main processing chamber 180 via a gas distribution manifold 199. Precursor A 100 may be any one or more of a series of gaseous compounds used for depositing semiconductors, insulators, metals or the like that are well-known in the art (e.g, PDEAT (pentakis(diethylamido)tantalum), PEMAT (pentakis(ethylmethylamido)tantalum), TaBr5, TaCl5, TBTDET (t-butylimino tris(diethylamino) tantalum), TiCl4, TDMAT (tetrakis(dimethylamido)titanium), TDEAT (tetrakis(diethylamino)titanium), CuCl, Cupraselect® ((Trimethylvinylsilyl)hexafluoroacetylacetonato Copper I), W(CO)6, WF6, etc.) and examples will be further discussed herein. Finally, the ion/radical distribution showerhead 171 shields the dielectric wall 173 adjacent to the supplied RF or microwave power 160 against being coated by precursor A 100 during processing which can degrade power transfer to the plasma 172 in processing systems found in the prior art. This is of particular importance in the case of deposition of conductors whereby if the dielectric 173 is fully exposed to the metal containing first reactant 100 (e.g., precursor A) and if the plasma 172 was directly generated within the main chamber 190 without the use of an isolating distribution showerhead 171, then metal deposition onto the dielectric 173 will eventually shield out RF or microwave power 160 from the plasma 172 such that the plasma 172 will extinguish.
[0038]FIG. 2A depicts a sequence for an improved ALD method incorporating periodic exposure of the substrate to ions. In this variant of the method, ion exposure 230 begins with the introduction of the second precursor 220 (especially when plasma generated radicals 176 are used as the second precursor or reactant). This figure illustrates one embodiment of MII-ALD utilizing the apparatus described in FIG. 1. This results in an enhanced sequential ALD process as follows:
[0039] 1) First exposure 200: The substrate 181 is exposed to a first gaseous reactant 100 (e.g., precursor A), allowing a monolayer of the reactant to form on the surface. The substrate 181 may be at any temperature below the decomposition temperature of the first gaseous reactant although it is preferable for the temperature to generally be less than approximately 350° C.
[0040] 2) First evacuation 210: The excess reactant 100 is removed by evacuating 214 the chamber 180 with a vacuum pump 184.
[0041] 3) Second exposure 220: Unlike conventional ALD, the substrate 181 is simultaneously exposed to ions 177 and a second gaseous reactant (e.g., microwave or RF plasma generated radicals 176) during this step with the substrate 181 (e.g., wafer) biased to a negative potential Vbias 185. Microwave or RF power 160 is supplied into the plasma chamber 170 to generate both the ions 177 (e.g., argon-ion (Ar+)) and radicals 176 (e.g., H atoms). The ions will strike the wafer 181 with an energy approximately equal to (e|Vbias|+e|Vp|) where Vp is the plasma 172 potential (typically 10V to 20V). Vbias (−20V to −500V) is typically chosen to be greater than Vp in magnitude, and is used to control the ion 177 energy. With the activation energy now primarily supplied by ions 177 instead of thermal energy, the first and second (chemi- or physi-sorbed) reactants react via an ion-induced surface reaction to produce a solid thin monolayer of the desired film at a reduced substrate temperature below conventional ALD. The deposition reaction between the first and second reactants is self-limiting in that the reaction between them terminates after the initial monolayer of the first reactant 100 is consumed.
[0042] 4) Second evacuation 210: The excess second reactant is removed by again evacuating 216 the chamber 180 with the vacuum pump 184.
[0043] 5) Repeat: The desired film thickness is built up by repeating the entire process cycle (steps 1-4) many times.
[0044] Additional precursor gases (e.g., 120, 140) may be introduced and evacuated as required for a given process to create tailored films of varying compositions or materials. As an example, an optional exposure may occur in the case of a compound barrier of varying composition. For example, a TaNx/Ta film stack is of interest in copper technology since TaNx prevents fluorine attack from the underlying fluorinated low-k dielectrics, whereas the Ta promotes better adhesion and crystallographic orientation for the overlying copper seed layer. The TaNx film may be deposited using a tantalum containing precursor (e.g., TaCl5, PEMAT, PDEAT, TBTDET) as the first reactant 100 (precursor A) and a mixture of atomic hydrogen and atomic nitrogen (i.e. flowing a mixture of H2 and N2 into the plasma source 172) as the second reactant to produce a TaNx film. Simultaneous ion exposure is used to drive the deposition reaction. Next a Ta film may be deposited in a similar fashion by using atomic hydrogen (as opposed to a mixture of atomic hydrogen and nitrogen) as the second reactant. An example of a tailored film stack of differing materials can be the subsequent deposition of a copper layer over the TaNx/Ta bi-layer via the use of a copper containing organometallic (e.g., Cu(TMVS)(hfac) or (Trimethylvinylsilyl)hexafluoroacetylacetonato Copper I, also known by the trade name CupraSelect®, available from Schumacher, a unit of Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad, Calif. 92009) or inorganic precursor (e.g. CuCl) shown as precursor C 120 in FIG. 1. The copper layer can serve as the seed layer for subsequent electroless or electroplating deposition.
[0045] A variant of the method shown in FIG. 2A is illustrated in FIG. 2B where ion exposure is initiated after the second reactant exposure. FIG. 2B depicts a sequence for an improved ALD method incorporating periodic exposure of the substrate 181 to ions 177. In this variant of the method, ion exposure 280 begins with the evacuation 250 of the second precursor 256 (especially when the second precursor or reactant is not subjected to a plasma). Typically, this is the case where the second precursor or reactant is not a plasma-generated radical.
[0046] In the previous embodiments of MII-ALD, although the deposition temperature can be lowered significantly, the first and second reactants are still sequentially introduced into the main process chamber 180, and hence will still be a slow process. It is of particular interest to eliminate or replace the time-consuming flow-evacuation-flow-evacuation sequential nature of the process.
[0047] In the preferred embodiment of the MII-ALD process, a substrate 181 heated (e.g., to a low temperature of less than or equal to 350° C.) or unheated is simultaneously exposed to a first reactant and a second reactant, and subjected to modulated ion 177 exposure. By modulating 1) the ion flux (i.e. the number of ions hitting the substrate per unit area per unit time); 2) the energy of the ions striking the substrate; or a combination of (1) and (2), the deposition reaction can be precisely toggled "on" or "off". Since the substrate 181 is preferably maintained at a low substrate temperature, the first and second reactants do not thermally react with any appreciable rate or do not react at all when the ion flux or energy is toggled to a "low" state. Instead, the deposition reaction only takes place when either the ion flux or ion energy is toggled to a suitable "high state". Ion flux or energy modulation can vary generally from 0.1 Hz to 20 MHz, preferably from 0.01 KHz to 10 KHz. During deposition, the main process chamber 180 pressure can be maintained in the range of generally 102 to 10−7 torr, more preferably from 101 to 10−4 torr, depending on the chemistry involved. The desired film thickness is attained via exposure of the substrate to the suitable number of modulated ion flux or energy pulse cycles. This MII-ALD scheme results in a "continuous" deposition process that is significantly faster than conventional sequential ALD since the two, slow evacuation steps (up to minutes) are eliminated and replaced by the faster (KHz range or above) ion modulation steps. The modulation can be either of the ion flux via the plasma power or of the ion energy via an applied periodic wafer bias.
[0048] The MII-ALD method utilizing ion flux modulation to control the deposition cycle is illustrated conceptually in FIG. 3A, with the flux modulation scheme described more explicitly in FIGS. 4A and 4C. FIG. 3A depicts the MII-ALD method utilizing ion flux modulation 320 to vary the substrate 181 exposure to ions 177. Note that the second reactant 310, e.g., radicals, is synchronized with the ion flux via 320 plasma power modulation, causing a periodic exposure of the substrate to ions and radicals. Varying the power 160 delivered to the plasma 172 can vary the ion flux from little or none to maximum ion production. Plasma power modulation can take the form of variations in frequency (periodicity), magnitude, and duty-cycle. Increasing plasma power 160 leads to increasing plasma 172, and hence, increased ion 177 density. Since the deposition process is ion-induced, having little or no ion bombardment will essentially stop the deposition process, whereas increased ion bombardment will cause deposition to occur. A constant wafer bias 185 (DC in FIG. 4C or RF in FIG. 4A) is applied to define the ion energy of the modulated ion flux in this embodiment and is chosen to be sufficiently high so that ion-induced surface reactions can occur. Note that in this embodiment since the plasma (either RF or preferably microwave) power 160 is used to generate both ions 177 and radicals 176, the second reactant (e.g., radicals) flux 310 is synchronized with the ion flux 320 pulses. The radical feed gas 110 (H2 for example) flow, however, does not change. Instead, the radical flux 310 (e.g., fraction of H2 which is converted to atomic H) is modulated.
[0049] Alternatively, subjecting the substrate 181 to a non-constant wafer voltage bias 185 can vary the incoming ion energy at a fixed plasma power 160 (i.e., ion flux). This preferred embodiment of MII-ALD is illustrated conceptually in FIG. 3B, and more explicitly in FIGS. 4B and 4D. FIG. 3B shows the MII-ALD method utilizing ion energy modulation 350 to vary the substrate 181 exposure to ions 177 by varying the substrate bias 185. The applied bias 185 can take the form of variations in frequency (periodicity), magnitude, and duty-cycle. A DC as shown in FIG. 4D or RF (e.g., 400 kHz, 2 MHz, 13.56 MHz, etc.) as shown in FIG. 4B power supply can be used. When the wafer potential is "low" (e.g., near or at zero with respect to ground), the incoming ions 177 do not have enough energy to induce surface deposition reactions. When the wafer 181 potential is "high" (e.g., at a significant negative potential relative to ground), the incoming ions 177 will have the necessary energy to induce surface deposition reactions via collision cascades. In such a fashion, the deposition can be turned "on" or "off" by modulating the wafer bias voltage 185, and hence the impinging ion 177 energy. Typical wafer voltages can range from generally −20 V to −1000 V, but preferably in the −25 V to −500 V range, and more preferably in the −50 V to −350 V range during deposition. The bias voltage 185 is coupled to the wafer via the pedestal 182. Preferably, the substrate pedestal 182 is an electrostatic chuck (ESC) to provide efficient coupling of bias voltage to the substrate. The ESC is situated in the main processing chamber 180 and can be cooled via a fluid coolant (preferably a liquid coolant) and/or heated (e.g., resistively) to manipulate the substrate temperature.
[0050] As illustrated in FIG. 5 for the case of an applied DC bias, the preferred electrostatic chuck is a "coulombic" ESC 500 (bulk resistivity generally greater than 1013 ohm-cm) rather than one whose bulk material effects are dominated by the Johnson-Rahbek (JR) effect (bulk resistivity between 108 and 1012 ohm-cm). Typically, the substrate potential is a complex function of the voltage of the electrostatic "chucking" electrodes if these voltages are established relative to a reference potential, but is simplified in the case of "coulombic" (non-JR) ESC. However, if the power supply 510 that powers the ESC 500 is truly floating, i.e., the entire system has a high impedance to the chamber 180 potential (usually ground) including the means of supplying power, then the substrate potential can be arbitrary. In particular, if the ESC power supply 510 is also center-tapped 518, then the wafer potential can be established by connecting the center tap 518 to the output of a power amplifier 520. This power amplifier can be controlled by a computer or a waveform generator 530 to periodically drop the substrate potential to a negative value for a certain period of time. It is desired to have independent control of the magnitude, frequency (periodicity), and duty cycle of this substrate bias pulse train. Such an ESC system is depicted in FIG. 5, which shows an ESC system suitable for modulating the ion energy in the MII-ALD process: a) in topological form; and, b) as an equivalent electrical circuit.
[0051] The deposition rate is affected by the choice of the critical bias pulse train variables: the magnitude, frequency (periodicity), and duty cycle. Preferably, when the bias frequency is high (e.g., 100 Hz-10 KHz) with a short duty cycle (e.g., less than 30%), reducing the net, time-averaged current (which can cause substrate potential drift, de-chucking problems, or charge-induced device damage) while providing a charge relaxation period wherein the ion charges accumulated during ion exposure can redistribute and neutralize.
[0052] Once the deposition rate is calibrated for a particular recipe (Angstroms/cycle), the ability to accurately determine the film thickness by counting cycles is a further benefit of this modulation scheme. The higher the frequency, the finer the resolution of this critical deposition process performance metric.
[0053] Alternatively, the substrate potential can be modulated by imparting an induced DC bias to the substrate by applying RF power to the pedestal. Preferably, the RF power is coupled into the ESC electrodes. FIGS. 4A-F illustrate the preferred methods of modulating the MII-ALD process. In FIG. 4A, an RF bias power B2 is applied to the substrate pedestal 182 imparting an induced DC bias V2 to the substrate while the plasma (either microwave or RF) power 400 is varied periodically between a high P1 and a low P2 power state. In FIG. 4B, plasma (either microwave or RF) power 410 is constant P1 while an RF bias power, applied to the substrate pedestal 182, is varied between a low B1 and a high B2 bias state (V1 and V2 are the DC offset or bias voltages resulting from the applied RF bias power). In FIG. 4C, a negative DC bias 425 is applied to the substrate pedestal 182 while the plasma (either microwave or RF) power 420 is varied periodically between a high P1 and a low power P2 state. In FIG. 4D, plasma (either microwave or RF) power is constant 430 while a DC bias 435 applied to the substrate pedestal 182 is varied between a zero V1 and a negative voltage state V2. In FIG. 4E, a mechanical shutter periodically occludes the ion source. All the while, the plasma power 440 (either microwave or RF) and substrate voltage 445 are held constant. In FIG. 4F, a source area that is smaller than the substrate 181 is preferably used. In this case, plasma (either microwave or RF) power 450 is constant, a negative DC substrate bias 455 is constant, and the source and substrate 181 are moved relative to each other 457, exposing only a portion of the substrate 181 at a time. The methods proposed in FIG. 4B and FIG. 4D, whereby the substrate bias is modulated at a constant plasma power 410, 430 and hence ion flux, are most preferred.
[0054] MII-ALD can be used to deposit dielectric, semiconducting, or metal films, among others, used in the semiconductor, data storage, flat panel display, and allied as well as other industries. In particular, the method and apparatus is suitable for the deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, and high dielectric constant (high-k) films.
[0055] This process utilizes independent control over the three constituents of plasma—ions, atoms, and precursors. Decoupling these constituents offer improved control over the deposition process.
[0056] An added benefit of using MII-ALD is that with proper choice of the second reactant, selective ion-enhanced etching and removal of unwanted impurities can be performed. As an example, for many chemistries, the preferred second reactant is monatomic hydrogen (H) 176. Simultaneous energetic ion and reactive atomic H bombardment will cause selective removal of unwanted impurities (e.g., containing carbon, oxygen, fluorine, or chlorine) commonly associated with organometallic precursors (e.g., TBTDET, PEMAT, PDEAT, TDMAT, TDEAT), and proceed with removal rates superior to either chemical reaction (e.g., atomic H only) or physical sputtering (e.g., Ar ion only) alone. Impurities lead to high film resistivities, low film density, poor adhesion, and other deleterious film effects. Alternatively, in addition to atomic hydrogen, other reactive groups such as nitrogen atoms (N), oxygen atoms (O), OH molecules, or NH molecules, or a combination thereof may be employed.
[0057] From the description of the preferred embodiments of the process and apparatus set forth above, it is apparent to one of ordinary skill in the art that variations and additions to the embodiments can be made without departing from the principles of the present invention. As an example, chlorine, bromine, fluorine, oxygen, nitrogen, hydrogen, other reactants and/or radicals containing the aforementioned elements or a combination thereof, in conjunction with energetic ion bombardment, can be used to effect etching or material removal as opposed to deposition. This is of particular importance in the cleaning of native oxides of copper, aluminum, silicon, and other common conductor and semiconductor materials used in IC manufacturing. Either the deposition or etching can be accomplished globally (as illustrated in the preceding embodiments) or may be chosen to be local to a controlled area (i.e., site-specific using a small, ion beam point or broad-beam source scanned or otherwise stepped across the substrate, exposing only a fraction of the substrate area at any given time).
Referenced by
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Once Upon a Time
Meghan Ory and Jessica Lowndes: Celebrity Lookalike Alert!
Who doesn't love a good celeb lookalike? We know we're addicted, which is why we couldn't help but notice that Once Upon a Time beauty Meghan Ory (Ruby/Red) looks a heck of a lot like 90210 star Jessica Lowndes.
The long black hair. The stunning eyes. The wide smile. These two could definitely play sisters one day.
Do you agree?
Catch the next episode of Once Upon a Time on Sunday, February 10, 2013 at 8 p.m. ET/PT on ABC.


text:
Baseball to Host Holiday Clinic
Sunday, December 18
- Release Date:
- December 6, 2011
- Contact:
- The Office of Sports Information
- (716) 649-7900 ext. 333
HAMBURG, N.Y. -- The Hilbert College baseball team will host a Holiday Baseball Clinic on Dec. 18. Two sessions (age based: 7-12; 13-17) will be offered at the Hamburg campus.
Cost is $50 per person with a family discount available. For more information, contact head coach Jim Pernick at 716-868-7551 or follow the link below for a baseball clinic application.
Hilbert College, located in suburban Hamburg, N.Y., south of Buffalo, is a private four-year college founded in 1957 in the Catholic Franciscan tradition. With nearly 1,100 students, Hilbert is a dynamic Western New York college that offers career-focused majors, including one of the top criminal justice programs in the region, and more than 50 minors and concentrations. The college's engaging, student-centered campus community offers numerous leadership, internship, and service learning opportunities from which students launch successful careers while making positive changes in their communities. The Hilbert Blueprint promotes a well-rounded student experience over four years – starting with the Foundations Seminar in the freshman year, followed by Sophomore Service, Junior Symposium, and culminating with the Senior Capstone. Hilbert has expanded its academic offerings with the college's first graduate programs and new Accelerated Degree Programs geared to adult learners.
Upcoming Events
- First Year Student Orientation
- Aug 14, 2015
- Summer Session A2 Ends
- Aug 21, 2015
- First Year Student Orientation
- Aug 28, 2015


text:
Are you pondering which business opportunity in Singapore can create a genuine income and which of them are scams? Regardless if you are searching for a good affiliate network program or a real estate investment opportunity, you have to cut through the chase. Considering the overwhelming claims which can be on the market these days, it appears nearly impossible to find out which direction to turn for true information.
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1. Who is behind the particular business?
You can discover a lot simply by making a calling. However, do not be amazed if 90% of the business opportunities on the market do not have a telephone number on the website. 2.5% use a telephone number with a bad quality answering machine. And yet another 2.5 % has got 'slick willy' prepared to burn up your charge card.
Indeed, it's going to cost you some money to speak with the business owner. However, it is an inexpensive investment in your near future. Here are a few things to pay attention to if you do get a live individual. To begin with, inquire if he/she is the owner. Next, if they do not have a well-defined site detailing what the business opportunity is all about, enquire about the things you feel are lacking. Keep in mind, should you get hold of the owner; they'll most likely provide you with about 5-10 minutes of their time thus know what to ask prior to you picking up the phone.
Other suggestions to keep in mind are: When they try to sell you within the very first moment, they're most likely just planning to get in your pockets. If it's a co-employee picking up the phone, ask to talk to the owner. If a person is hiding it's either because they really are too hectic to speak with you, or perhaps they've just employed somebody who is good at punching in your charge card number.
Many people who do give a working phone number are genuine but make use of your good instincts and ask smart questions, and you'll understand a lot.
2. Any kind of legal cases pending?
When I've been exploring various business opportunities, I usually type into Search engines the business name followed by the phrase 'lawsuit.' If there is a legal case pending, it'll often display in the first 20 listings. An important thing to keep in mind is to verify the legal action. At times, individuals are slanderous and simply out to spoilt a good person reputation. It does not happen usually. However, it does happen.


text:
|3.3 lbs.
|Air Flow (CFM):
|Air Speed (MPH):
|90 / 130
|Batteries Included:
|Bare Tool
|Battery Type:
|Mulching Capability:
|Speed Controls:
|Toggle Switch
|Speed Settings:
Reviewed by 1 customer
Comments about 24V Cordless Lithium-Ion Two Speed Handheld Blower (Bare Tool):
I am not a big fan of green works customer service or the fact that they have multiple 24v products and batteries that don't work together so you need to call them to figure out which battery goes with each device. Their marketing material says all their products work with their 24v battery but they have a gen 1, a lithium, a second lithium and a lithium max battery that don't work on every device. Pretty shady marketing. So now I have 2 batteries and 2 chargers for 24v lithium batteries I can't share between devices. This will be my last green works purchase.
On the flip side I bought this and the black and decker 20v max leaf blower to compare. The high setting on the black and decker is equivilant to the low setting on this one, so it has more power. Also the battery pack last longer on this one. We shall see how long it lasts but overall I prefer the black and decker 20v max system for price/performance. For a larger yard or heavy leaves this is better. If you have a smaller yard, are older and need a lighter cordless the black and decker is better. Plus with the black and decker line you can share batteries between all 20v max devices easily with no trickery.
Do you have questions about this product?
Get answers from real customers and in-house experts with AnswerBox.
Q:Will this blower work with the battery from a greenworks model 24122 blower?
2 answers
A:Yes the batteries are cross compatible.
A:Yes the batteries are cross compatible.
Q:Will this blower work with the battery from a greenworks model 24122 blower?
2 answers
A:Yes the batteries are cross compatible.
A:Yes the batteries are compatible.
Double The Industry Standard
NEW GreenWorks products are protected against all defects under normal use for a period of (4) four years (90 days for commercial use) from the shipping date.
Reconditioned GreenWorks products are protected against all defects under normal use for a period of 30 Days from the shipping date.
GreenWorks can opt to repair, replace or issue a refund for products that are determined to be defective, or that have been damaged during shipping. Replacement of products or parts subject to normal wear and tear is the responsibility of the customer. If GreenWorks accepts a return under Warranty, you can return the defective or damaged product only after you call and receive a Return Authorization from GreenWorks. You also will receive a refund for your original shipping charges, and GreenWorks will arrange and pay for your return shipping charges. Batteries carry a one-year warranty against defects in workmanship and materials. Batteries must be charged in accordance with the operator's manuals directions and regulations in order to be valid.


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I just recently came back here after a long absence, I know, shame on me. My question is: Is it possible to change my user name?
tallica was a name I started using when I first got into posting on message boards. I used it because it was the only thing I could think of at the time. I'd like to change it to something that I use more often in message boards. Any help would be appreciated. Thanks.


text:
Study Abroad
Go There From Here
"To know there, you have to go there." – Zora Neale Hurston
Opportunities to study abroad are a regular feature of Evergreen's curriculum.
You will examine social issues, history, politics, literature and language before you set off on your adventure.
Some programs focus on art and history. Other programs focus on politics. And, still more feature environmental studies. The central theme provides the context for taking your studies out of the classroom and into the real world.
- 2013-14 Study Abroad Programs
- 2014-15 Study Abroad Programs
- International Programs & Services
- Japanese University Exchange Program


text:
Buy Tickets NYFF51: Applied Science
Show From Series
Saturday, August 2
Sunday, August 3
Monday, August 4
Tuesday, August 5
Wednesday, August 6
Thursday, August 7
Friday, August 8
NYFF51: Applied Science
September 29, 2013 – October 09, 2013
Here are three films united by one common thread: they are all built around projects and they talk to each other in interesting ways. All three meet on the shared ground of obsession, and each in its own unique way skirts the Utopian. Read more »


text:
Work to start on Windsor bridgeApril 06,2013WINDSOR Construction is starting soon on replacing a bridge in Windsor which will result in some slowdowns on Interstate 91.
A spokesman for the projects general contractor said the bridge, which crosses Route 44, was built as part of the original highway construction project between 1958 and 1965. It has passed its design life of 50 years.
The Valley News reported that the $20.6 million project is being paid for by 90 percent federal funds and a 10 percent state match.
The southbound span is scheduled to be replaced this year and the northbound bridge will be replaced in 2014.
Closure of the southbound lanes of the interstate will probably begin at the end of this month. Single-lane traffic also will be expected.MORE IN This Just InThe family of a Connecticut man who was killed in a car accident on Route 4 last Friday night is... Full StoryAssociated Press Full StoryIt seems like I just started to warm up from last winter and I see back-to-school displays. Full Story
- Most Popular
- Most Emailed
- RICHARD'S POOR ALMANACK: On this day 1739, 'Richard Palmer' identified in prison at York Castle as the notorious outlaw DICK TURPIN; IN 1836, Battle of the Alamo begins near San Antonio de Bexar, Texas; 1896, the Tootsie Roll invented by LEO HIRSCHFELD.
- RICHARD'S POOR ALMANACK: On this day in 1472, Orkney, Shetland islands put up as collateral by Norway to Scotland in lieu of dowry for MARGARET OF DENMARK on her marriage with JAMES III, king of Scotland; 1962, JOHN GLENN first American to orbit Earth.
- TOMORROW'S HEADLINES TODAY: City mayoral candidates debate campaign issues; Hartford, Conn., woman still missing; Neal Goswami reports attempts to legislate suicide; local woman loses 100 pounds through TOPS program.
- RICHARD'S POOR ALMANACK: On this day in 1878, JOHN TUNSTALL murdered near Lincoln, New Mexico, by the outlaw JESSE EVANS; in 1930, ELM FARM OLLIE first cow to fly in aircraft, first to be milked airborne; 1955, nuke test WASP; '79, snow in Sahara.
- TOMORROW'S HEADLINES TODAY: Rutland Herald News Editor Alan J. Keays and staff writer Gordon Dritschilo discuss stories planned for the February 18, 2015, edition of the newspaper: Winter budgets maxed, legal marijuana, Springfield bank job, USPS slowdown
- RICHARD'S POOR ALMANACK: On this day in 1249 AD, ANDRE of LONGJUMEAU is dispatched by LOUIS IX of France to meet the KHAGAN, ruler of the Mongol Empire; in 1804, during 1st Barbary War, STEPHEN DECATUR scuttles the pirate-held USS Philadelphia in Tripoli.


text:
Mock Neck Zip Up Vest
Style # 222482
Inject a dose of sportif-glam into your look with this bebe mock neck zip-up vest. Pair with leggings and strappy heels for an evening look.
- 88% nylon, 12% spandex
- Center back to hem: 18" (46 cm)
- Hand wash according to care label
- Made in USA with imported materials
- Model is 5'9" and is wearing a US size S
Rated 4 out of 5�by 1 reviewer.
Rated 4 out of 5�by TinyMK1 LOVE THE COLOR The color is a very rich purple, and definitely draws attention to you. I went XXS in this and XS in the blue cut-out cropped one (not sure if it's still in stock, it was on sale when I ordered it), and the XXS fits me much better. The only thing I'm not crazy about with it is the fabric. I feel like I should be going for a jog in it! Other than that, it is a great piece to add to my closet. October 2, 2013
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Well the new link for download all those AddOns has been finally fixed.
We are currently changing the Bohemia Interactive forum software. This means http://forums.bistudio.com will be 'Read Only' until Friday. Apologies for the inconvenience.
Well the new link for download all those AddOns has been finally fixed.
Good news Ive got an ofp mission marathon ahead of me tonight .
Edit: God I hate the host you use.
Last edited by mrmoon; Jan 4 2012 at 17:26.
Ok here is my review.
Now this a mission that makes use of many, many, many various addons fortunately the author has saved us a great deal of time by providing ALL nessacary addons in one download.
The idea of unzipping all those rar files into one mod folder seems a little daunting and you will wonder if it is worth the time and personally I feel it is and I'm not even a massive fan of counter insurgency missions.
The mission begins with me and my team riding a blackhawk enroute to the combat zone. As we near the LZ I can see the target camp and the smoke cover our boys have provided. As the chopper begins to land a small group of insurgents charge out of the smoke and begin peppering the side of our blackhawk with small arms fire killing two of my seal team members before they themselves are mown down by the blackhawks slow to react door gunner.
We are inserted near some tall rocks to the left is a hill that seems to overlook the enemy camp I decide to take the hill as the frontal route to the camp looks suicidal.
From the hill we take up owerwatch over the camp and begin laying down some serious fire on the inhabitants, I also have a much better view of the objective from here the camp is almost like a small village made up of various primitive stone houses with a large clearing filled with long grass in the middle. There are a number of figures dotted about the village I see groups of insurgents darting in and out of cover and a small convoy of vehicles attempts to make a break for it but its utterly destroyed by my squads superior fire power.
After picking off more then a dozen insugents and expending half my ammo I break cover and flank left towrards the nearest stone house, team close behind. I order my squad to take up overwatch in the village sqaure as I creep through a large hole in the wall of the first building.
After exploring a few buildings my team spots hostiles on the hills behind the camp and begins hammering the hillside where insurgent gunmen and vehicles are. While my team are putting fire on the hillside I explore the camp a diverse group of assailants lie at my feet taliban, generic looking insurgents, chechens and what I assume are philipino jihadists. While working my way around the permimeter a strange but typical ofp moment takes place, a man wearing a western syle military unifrom emerges from a wall then proceeds to patch me up then disapears again. There are a few more insurgents left in the vil, I explore buildings, gather inteligence and free hostages. An insurgent mortar team sets up in the hills and Im not quick enough to stop them getting a round off that crashes into the center of the camp and kils my radio man. After dealing with the mortar I gather some more intel then exit the camp and call in the airstrike.
The bomber takes a while to arrive but gives us quite a firework show once it gets there, several secondary explosions rip through the camp as many of the arms caches I had earlier dicovered ignite.
Now I call in the extraction chopper and this is the first and only major bug I found.
You see the first time I called the chopper in the pilot felt a strange urge to be one with the other chopper picking up bravo team, he came into bravos chopper sideways in a mid air colision destroying both choppers and completley wiping out bravo team who where waiting below.
I tried again but this time the chopper touched down for a second before leaving us high and dry to make the final objective on foot. (what a dick)
This mission makes good use of most of the addons it requires however even I feel a few of them where a tad unessacary, none the less I highly recommend this mission just for its epic, realistic feel and give it a 9 out of 10.
First of all thanks for playing my mission. Well I'm working to improve the problem with the rescue helicopter... Meanwhile I recommend you to order your team to board the first chopper closing in to your position... it will take you to an extra hidden objective. I also recommend you to wacht out for who is leaving the area in the last vehicle (Blue 4x4 Ford)...
About the large number of AddOns used... hmm well I have to perfect my way of making missions.
Yeah don't get me wrong I loved the incredible amount of new objects,units, scripts etc it makes the whole thing a fresh experience its just I think using chechens, taliban and the generic me rebels would of been enough as the philipines addon looks quite large (unless you are philipino in which case I totally understand why you put it in).
I shot the 4x4 to peices but never looked inside (was it osama?).
And I made it to the final objective (the squad under fire from insurgent vehicles) but had to scale the mountin on foot lol.
I tried getting into both choppers but something went wrong both times :/ maybe it was just me having the draw distance turned right up and slowing things down.
But like I said it was a great mission.
And oh yeah if you work on it anymore you could make an intro and and outro I think the mission would really benefit from it.
What they're so much addons... and a mission only?
Just give it a go keep a night free and try it out
I know its a ton of addons a ridiculous amount but its a pretty decent mission despite its few flaws and if we want to keep ofp going and going we need to keep playing.
If we stop playing and reporting others missions we stop people playing our missions and then we all stop wanting to make anything.
Lets give ofp another jolt and keep it alive at least another two years XD
Edit: Also don't forget single missions are not necessarily over in a heartbeat some people make missions that seem like they should be part of a campaign and others make em that could be mini campaigns themselves.
#mr moon : You're right that we keep alive OFP. We need to create a mission. I myself am trying to make my mission had little addons. Understand any weapon or addon pack NECESSARY for the story missions. But not 700 Mb. This is more than the original game.
I Tried here to download this mission, but still I did not start. (missing addons). Mission to a much-needed addons too many people withdraw. With the author simply has to count. Good missions can be created with a few addons and the best (WTWE, WET, DOWN, THREE KINGS, HAWK IN NETS). All addons were three times less than the mission.
@autor of mission
I do not work from the author's mission to deter, but to support him. In simplicity lies the beauty. Continue in the work of missions and let it go through the head with those addons (autor)
(sorry for my english)


text:
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text:
Observance to Recognize Student Veterans and other Military Personnel
- Release Date:
- November 8, 2012
- Contact:
- Matt Heidt, firstname.lastname@example.com
- 716-926-8792
HAMBURG, N.Y. – In honor of student veterans and all who have served in the U.S. military, Hilbert College will host a Veterans Day morning service and other on-campus activities Monday, Nov. 12.
As part of Hilbert's Veterans Day observance, American flags will be placed in a cross pattern in the main quad of the campus grounds, along with yellow ribbons hung in order to honor veterans in the armed services.
Activities for the day will start with a flag ceremony at 9:30 a.m. at the college's flagpole, located in the campus quad. The raising of the flag will be performed following a welcome by Cameron Haag, air force veteran and president of the college's Military Club, along with Hilbert president, Dr. Cynthia Zane. Rain location for the ceremony will be in the Franciscan Hall Atrium.
At 4:00 p.m., the Military Club will lead a prayer followed by a walk with fellow Hilbert students, faculty, and staff around the main campus road in honor of current military service members and veterans.
In addition to the day's activities, Hilbert student veterans will receive a free lunch in the Campus Dining Hall, which will be patriotically decorated, to thank them for their service.
More information on Hilbert's Veterans Day observance is available by contacting Cameron Haag, president of the Military Club, at firstname.lastname@example.com or Jeannie Kornacki, director of student activities, at 926-8932 or e-mail firstname.lastname@example.com.
Hilbert College, located in suburban Hamburg, N.Y., south of Buffalo, is a private four-year college founded in 1957 in the Catholic Franciscan tradition. With nearly 1,100 students, Hilbert is a dynamic Western New York college that offers career-focused majors, including one of the top criminal justice programs in the region, and more than 50 minors and concentrations. The college's engaging, student-centered campus community offers numerous leadership, internship, and service learning opportunities from which students launch successful careers while making positive changes in their communities. The Hilbert Blueprint promotes a well-rounded student experience over four years – starting with the Foundations Seminar in the freshman year, followed by Sophomore Service, Junior Symposium, and culminating with the Senior Capstone. Hilbert has expanded its academic offerings with the college's first graduate programs and new Accelerated Degree Programs geared to adult learners.
Upcoming Events
- First Year Student Orientation
- Aug 14, 2015
- Summer Session A2 Ends
- Aug 21, 2015
- First Year Student Orientation
- Aug 28, 2015


text:
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