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The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, and/or an ARC, in multiple levels, including the pre-metal dielectric (PMD) level, in IC applications and provides a dielectric layer deposited in situ with the SiC material for the barrier layers, and etch stops, and ARCs. The dielectric layer can be deposited with different precursors as the SiC material, but preferably with the same or similar precursors as the SiC material. The present invention is particularly useful for ICs using high diffusion copper as a conductive material. The invention may also utilize a plasma containing a reducing agent, such as ammonia, to reduce any oxides that may occur, particularly on metal surfaces such as copper filled features. The invention also provides processing regimes that include using an organosilane as a silicon and carbon source, perhaps independently of any other carbon source or hydrogen source, and preferably in the absence of a substantial amount of oxygen to produce a SiC with a dielectric constant of less than 7.0. This particular SiC material is useful in complex structures, such as a damascene structure and is conducive to in situ deposition, especially when used in multiple capacities for the different layers, such as the barrier layer, the etch stop, and the ARC and can include in situ deposition of the associated dielectric layer(s).
1. A method of forming a silicon carbide layer on a substrate, comprising:
introducing silicon, carbon, and a noble gas into a chamber;
initiating a plasma in the chamber;
generating a plasma of the silicon, carbon, and a noble gas by applying a first RF power at a first frequency and applying a second RF power at a second frequency less than the first frequency;
depositing a silicon carbide layer; and
depositing a first dielectric layer in situ on the silicon carbide layer, wherein the first dielectric layer comprises a silicon-oxygen-carbon based material.
2. The method of
a) depositing a silicon carbide etch stop in situ on the first dielectric layer;
b) depositing a second dielectric layer in situ on the silicon carbide etch stop.
3. The method of
4. The method of
5. The method of
6. The method of
depositing a silicon carbide anti-reflective coating in situ on the first dielectric layer; and
depositing a photoresist layer on the silicon carbide anti-reflective coating.
7. The method of
8. The method of
9. The method of
10. The method of
11. The method of
12. The method of
13. The method of
14. A method of in situ deposition of silicon carbide on a substrate, comprising:
depositing a silicon carbide barrier layer on the substrate by a method comprising:
introducing silicon, carbon, and a noble gas into a chamber;
initiating a plasma in the chamber; and
generating a plasma of the silicon, carbon, and a noble gas by applying a first RF power at a first frequency and applying a second RF power at a second frequency less than the first frequency;
depositing a first dielectric layer in situ on the barrier layer;
depositing an etch stop in situ on the first dielectric layer;
depositing a second dielectric layer in situ on the etch stop;
depositing a silicon carbide anti-reflective coating in situ on the second dielectric layer; and
depositing a photoresist layer on the silicon carbide anti-reflective coating, wherein the first dielectric layer comprises a silicon-oxygen-carbon based material.
15. The method of
16. The method of
17. The method of
a) introducing a reducing agent comprising nitrogen and hydrogen into a chamber;
b) initiating a reducing plasma in the chamber;
c) exposing an oxide on the substrate layer to the reducing agent.
18. The method of
This application is a Continuation Application of U.S. patent application Ser. No. 09/270,039, filed Mar. 16, 1999, now U.S. Pat. No. 6,974,766 which application is a continuation-in-part of U.S. Ser. No. 09/165,248, entitled "A Silicon Carbide Deposition For Use As A Barrier Layer And An Etch Stop", filed Oct. 1, 1998, now abandoned and a continuation-in-part of U.S. Ser. No. 09/219,945, entitled "A Silicon Carbide Deposition For Use as a Low Dielectric Constant Anti-Reflective Coating", filed Dec. 23, 1998, now U.S. Pat. No. 6,635,583, issued on Oct. 21, 2003, and all applications are incorporated by reference herein.
The present invention relates generally to the fabrication of integrated circuits on substrates. More particularly, the invention relates to a low temperature method for producing a low dielectric constant (low κ) silicon carbide film utilizing organosilane precursors under certain process regimes, which is useful as a low κ barrier layer, an etch stop, and an anti-reflective coating, and especially for in situ deposition with a plurality of layers, including dielectric layers.
Consistent and fairly predictable improvement in integrated circuit design and fabrication has been observed in the last decade. One key to successful improvements is the multilevel interconnect technology, which provides the conductive paths between the devices of an integrated circuit (IC) device. The shrinking dimensions of features, presently in the sub-quarter micron and smaller range, such as horizontal interconnects (typically referred to as lines) and vertical interconnects (typically referred to as contacts or vias; contacts extend to a device on the underlying substrate, while vias extend to an underlying metal layer, such as M1, M2, etc.) in very large scale integration (VLSI) and ultra large scale integration (ULSI) technology, has increased the importance of reducing the dielectric constant of the many layers and the capacitive coupling between interconnect lines. In order to further improve the speed of integrated circuits, it has become necessary to use materials having low resistivity and low κ (dielectric constant less than 7.0) insulators to reduce the capacitive coupling between adjacent metal lines. The need for low κ materials extends to barrier layers, etch stops, and anti-reflective coatings used in photolithography. However, typical barrier layer, etch stop, and anti-reflective coating materials have dielectric constants that are significantly greater than 7.0 that result in a combined insulator that does not significantly reduce the dielectric constant. Thus, better materials are needed for barrier layers, etch stops, and anti-reflective coatings having low κ values. The need for low κ materials also extends to dielectric layers. For instance, present efforts seek to establish a dielectric constant value for the dielectric layer(s) to less than 3.0 and preferably less than 2.5.
With the increase in circuit density, additional process changes are needed for smaller feature sizes. For instance, efforts are being made to improve the photolithography processes for more precise pattern etching. Photolithography is a technique used in making integrated circuits that uses light patterns and photoresist materials (typically organic polymers) to develop fine-scaled patterns on a substrate surface. Photoresist materials typically include, for example, naphthoquinone diazides. In many instances, to properly process the substrate with photolithography and avoid unwanted patterning, the high reflectivity of the layer to be patterned must be ameliorated so light ray reflection is reduced. Reflectivity is usually expressed as a percentage of a known standard, such as bare silicon, having a value of 100%. Extraneous reflections from underlying layers can be reflected to the photoresist and expose the photoresist in undesired areas. Any unwanted exposure can distort the lines, vias, and other features intended to be formed. The reflectivity of damascene structures, discussed below, has increased the need for better photolithography processes.
With multi-layer structures, increased reflectivity has contributed to imprecise etching. Dielectric layers are naturally translucent to the ultraviolet light used to expose the photoresist. Thus, multi-level dielectrics and features in the damascene structures results in increased and unwanted reflections. As a result, an anti-reflective coating (ARC) is deposited over the layer to be etched, where the ARC is typically a thin sacrificial layer that has a lower reflectivity than the underlying layer and is etched by the same or similar chemistries that are used to etch the underlying layer. The ARC reduces or eliminates the extraneous reflections so that improved feature dimensions and accuracy can be more closely spaced, enabling the increased current density desired for ULSI circuits.
ARC materials can be organic or inorganic, as described in U.S. Pat. No. 5,710,067, which is incorporated by reference herein. Organic ARCs include spin-on polyimides and polysulfones, among other materials, and are generally more expensive and require more complex processing than inorganic ARCs. Inorganic ARCs include silicon nitride, silicon oxynitride, α-carbon, titanium nitride, silicon carbide, and amorphous silicon. Prior to the present invention, inorganic ARCs typically were characterized by a high κ value and were not compatible with low κ structures. Use of a high κ ARC partially negates the advantage of using low κ materials because it adds a high κ material to a stack of otherwise low κ layers. In some applications, the high κ ARC can be removed from the substrate, but the removal adds complexity to the processing sequence. Organic ARCs can be used, but they are generally more expensive and require additional processing.
The purpose of the ARC is to reduce or eliminate any reflected light waves, typically, by adjusting three aspects of the ARC material—a refraction index (n), an absorption index (k, distinguished from the "κ" of a "low κ" dielectric), and the thickness (t) of the ARC to create a phase cancellation and absorption of reflected light. Typically, the required n, k, and t values depend on the thickness and properties of the underlying layer and need adjustment for each particular application. A computer simulation program, such as one entitled "The Positive/Negative Resist Optical Lithography Model", PROLITH/2, v. 4.05, available from Finle Technologies of Austin, Tex., simulates the effect on the n, k, and t values and the reflectivity of the particular layers. The results are analyzed and are typically followed by actual testing and reviewing the results through scanning electron microscopy (SEM) techniques. A proper combination at the various values of n, k, and t is chosen to reduce the reflected light for that application. Because the values of n, k, and t are dependent on each application and each substrate thickness, the proper selection may be time consuming and onerous. In addition, the selection of the n, k, and t values may be only applicable to narrow thickness ranges of the underlying layers which may cause additional difficulties in the repeatability of the deposition process from substrate to substrate.
Traditional deposition/etch processes for forming interconnects has also been improved with the higher circuit density to obtain more precise pattern etching. Thus, new processes are being developed. For instance, the traditional method of forming the circuit was depositing blanket layers of a conductor, etching the conductor to pattern the features, and then depositing dielectric materials over and between the features. With the emphasis on increased circuit density, the process has been somewhat reversed by depositing dielectric layers, etching the dielectric layers to form the features, and filling the features with conductive material to form the vias, lines, and other features.
The current trend in metallization is to use a damascene structure. In a dual damascene structure, the dielectric layer is etched to define both the contacts/vias and the interconnect lines in multi-layered substrates. Metal is then inlaid into the defined pattern and any excess metal is removed from the top of the structure in a planarization process, such as chemical mechanical polishing (CMP).
The reflectivity of such multilevel structures as a damascene structure has raised the required level of performance of ARC materials. Prior to such structures, the layer to be etched was typically above a single metal layer which is not transparent to the light exposure. Thus, the unwanted photoresist exposure from underlying layers was substantially limited to the single metal layer under the photoresist. However, in damascene and other structures, an increased number of layers above the conductor layer are now used with multilevel patterning. The dielectric layer(s) and other layers beside the conductor layers in features are comparatively transparent to the exposure light and thus more levels of reflections from multiple levels of features can hinder the photolithography processing of the upper layer. For instance, lines and vias/contacts may appear in the substrate at different levels. Light reflected from the different features at different levels result in reflected light patterns back to the photoresist layer which, unless corrected, may cause unwanted exposure of the photoresist.
Thus, with the decreasing feature sizes, the emphasis on low κ stacks, the use of copper, and the complex dual damascene structures, new methods and materials are needed to provide improved ARC characteristics. Silicon nitride and oxynitride have been typical materials used for an ARC, but have a relatively high dielectric constant (dielectric constant greater than 7.0) and may significantly increase the capacitive coupling between interconnect lines. The capacitive coupling may lead to cross talk and/or resistance-capacitance (RC) delay, i.e., the time required to dissipate stored energy, that degrades the overall performance of the device.
In searching for new materials, others have recognized some potential in silicon carbide (SiC) for some applications. But to the knowledge of the inventor, no source has adequately sought and developed a suitable ARC, barrier layer, and etch stop, using SiC. Furthermore, no known source has found a suitable combination of chemistries that allows in situ deposition, for instance, in the same chamber, of low κ dielectric layers, and SiC barrier layers, etch stops, and ARCs. Some sources, including U.S. Pat. No. 5,710,067 to Foote, et al., above, have noted or suggested silicon carbide in some form as an ARC. To the knowledge of the inventor, silicon carbide that has been produced using these traditional methods has not been effective in meeting the new process requirements in low κ structures. For instance, the disclosed chemistry of U.S. Pat. No. 5,591,566 to Ogawa, which patent is incorporated herein by-reference, uses separate sources of silicon, carbon, and hydrogen. This more traditional approach results in a higher κ than is desirable for the low κ emphasis of the ULSI efforts, especially in damascene structures. Another example, disclosed in U.S. Pat. No. 5,360,491 to Carey, et al., which is also incorporated herein by reference, requires a conversion to a crystalline silicon carbide, denoted as β-SiC.
Another reference referring to SiC is U.S. Pat. No. 4,532,150 to Endo et al., which is incorporated herein by reference and refers to a specific formulation of SixC1-x in which x is a positive number of 0.2 to 0.9 for providing SiC to a substrate surface. Endo provides no disclosure of SiC as a barrier layer, etch stop, or ARC, and the process parameters given in its examples are below the preferred or most preferred parameters of the present invention.
U.S. Pat. No. 5,465,680 to Loboda, incorporated herein by reference, discloses a SiC film in a CVD chamber, but fails to produce the film at low temperatures less than about 600� C. Another Loboda reference, U.S. Pat. No. 5,818,071, also incorporated herein by reference, discloses a SiC film for use as a barrier layer with a low κ dielectric layer, but fails to disclose that the SiC itself may be a low κ material and fails to describe regimes that would produce a low κ SiC. To the inventor's knowledge, a low κ SiC has eluded those in the field until the present invention. Furthermore, the Loboda '071 reference is designed to accommodate a subtractive deposition, not a damascene deposition as current technology uses, in which the substrate deposition deposits the metal layer, then etches the metal and deposits the SiC into the etched metal layer, resulting in a much different structure than a damascene structure.
Another reference, U.S. Pat. No. 5,238,866 to Bolz, et al., also incorporated herein by reference, uses methane, silane, and phosphine to create a hydrogenated silicon carbide coating for use in the medical field, having an improved compatibility with blood. However, none of these references contain a disclosure for SiC with the following process regimes used as a barrier layer, etch stop, or a low κ ARC.
The increasing complexities of the circuitry have also added to the processing steps. Transfers between chambers to effect the processing slow the production process and increase a likelihood of contamination. Thus, the processing would benefit by reducing the transfers outside of an enclosed cluster of chambers or even reducing the transfers out of the processing chamber itself by performing in situ processing on multiple layers. Preferably, the processing would include the same or similar precursors used for the multiple layers, such as the barrier layer(s), etch stop(s), ARC(s), and dielectric layer(s).
Therefore, there is a need for an improved process using silicon carbide as a low κ barrier layer, an etch stop, and an ARC for ICs, especially in a damascene structure and to deposit the layers in situ with each other and with associated dielectric layers.
The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, and/or an ARC, in multiple levels, including the pre-metal dielectric (PMD) level, in IC applications and provides a dielectric layer deposited in situ with the SiC material for the barrier layers, etch stops, and ARCs. Preferably, the chamber is configured to deliver the same or similar precursors for the barrier layers, etch stops, ARCs, and dielectric layers. However, the dielectric layer(s) can be deposited with different precursors. The present invention is particularly useful for ICs using high diffusion copper as a conductive material. The invention may also utilize a plasma containing a reducing agent, such as ammonia, to reduce any oxides that may occur, particularly on metal surfaces such as copper filled features. The invention also provides processing regimes that include using an organosilane as a silicon and carbon source, perhaps independently of any other carbon source or hydrogen source, and preferably in the absence of a substantial amount of oxygen to produce a SiC with a dielectric constant of less than 7.0. This particular SiC material is useful in complex structures, such as a damascene structure and is conducive to in situ deposition, especially when used in multiple capacities for the different layers, such as the barrier layer, the etch stop, and the ARC and can include in situ deposition of the associated dielectric layer(s).
A preferred process sequence for forming a silicon carbide layer on a substrate, comprises introducing silicon, carbon, and a noble gas into a chamber, initiating a plasma in the chamber, reacting the silicon and the carbon in the presence of the plasma to form silicon carbide, depositing a silicon carbide layer having a dielectric constant less than 7.0 on the substrate in the chamber, and depositing a first dielectric layer in situ with the silicon carbide layer.
Another aspect of the invention comprises in situ deposition of silicon carbide on a substrate, including depositing a silicon carbide barrier layer on the substrate, depositing a first dielectric layer on the barrier layer in situ with the barrier layer, depositing an etch stop on the first dielectric layer in situ with the first dielectric layer, depositing a second dielectric layer on the etch stop in situ with the etch stop, and depositing an anti-reflective coating on the second dielectric layer in situ with the second dielectric layer.
Another aspect of the invention includes a substrate having a silicon carbide layer having a dielectric constant less than 7.0 and deposited on the substrate and a first dielectric layer deposited on the silicon carbide layer in situ with the silicon carbide layer.
So that the manner in which the above recited features, advantages and objects of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.
It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, and/or an ARC, in multiple levels, including the pre-metal dielectric (PMD) level, in IC applications and provides a dielectric layer deposited in situ with the SiC material for the barrier layers, and etch stops, and ARCs. The dielectric layer can be deposited with different precursors as the SiC material, but preferably with the same or similar precursors as the SiC material. The present invention is particularly useful for ICs using high diffusion copper as a conductive material. The invention may also utilize a plasma containing a reducing agent, such as ammonia, to reduce any oxides that may occur, particularly on metal surfaces such as copper filled features. The invention also provides processing regimes that include using an organosilane as a silicon and carbon source, perhaps independently of any other carbon source or hydrogen source, and preferably in the absence of a substantial amount of oxygen to produce a SiC with a dielectric constant of less than 7.0. This particular SiC material is useful in complex structures, such as a damascene structure and is conducive to in situ deposition, especially when used in multiple capacities for the different layers, such as the barrier layer, the etch stop, and the ARC and can include in situ deposition of the associated dielectric layer(s).
As described below, a desirable characteristic includes depositing the material in situ, i.e., preferably in a given chamber, such as in a plasma chamber, or in a system, such as an integrated cluster tool arrangement, without exposing the material to intermediate contamination environments. In situ processing may be particularly important with a copper conductor, because of its rapid susceptibility to oxidation. By using the same or similar precursors, described below to create the SiC material, with different process regimes and reacting with oxygen, different materials may be created, such as a low κ dielectric material. The possibilities of in situ deposition of the various layers in a processing chamber or chambers are enhanced using the present invention. For instance, the barrier layer, lower dielectric layer, etch stop, upper dielectric layer, ARC, and other layers can be deposited within one chamber using different process regimes to obtain the different materials.
At least two schemes can be used to develop a dual damascene structure, where lines/trenches are filled concurrently with vias/contacts. In a "counterbore" scheme, the IC is formed, for instance, by depositing a barrier layer, first dielectric layer, etch stop, second dielectric layer, ARC, and photoresist where the substrate is then etched. In
The SiC of the present invention can be deposited in situ as a barrier layer, an etch stop, and an ARC with the in situ deposition including the dielectric layers. For instance, a SiC barrier layer 64, preferably about 500 Å thick, is deposited over the substrate and feature. Without the necessity of removing the substrate, a dielectric layer 66 may be in situ deposited over the barrier layer 64, preferably about 5000 Å thick. Preferably, the dielectric layer is an oxide based dielectric material having low κ characteristics. The dielectric layer may be un-doped silicon dioxide also known as un-doped silicon glass (USG), fluorine-doped silicon glass (FSG), or other silicon-carbon-oxygen based materials, some of which can be low κ materials. A low κ etch stop 68, also of SiC material according to the present invention, is then in situ deposited on the dielectric layer 66 to a thickness of about 200 Å to about 1000 Å, preferably about 500 Å. The etch stop material is typically a material that has a slower etching rate compared to the dielectric layer that is etched and allows some flexibility in the etching process to ensure that a predetermined depth is reached. In some well characterized etching processes, the etch stop may be unnecessary. Another dielectric layer 70 is deposited over etch stop 68, having a thickness from about 5,000 Å to about 10,000 Å, preferably about 7000 Å. Dielectric layer 70 can be the same material as dielectric layer 66. Likewise, the dielectric layer 70 can be deposited in situ with the barrier layer 64, dielectric layer 66, and etch stop 68. An ARC 72, also of SiC material and preferably about 600 Å thick, is deposited on the dielectric layer 70, using the same or similar chemistry as the underlying etch stop and barrier layer. After the ARC deposition, a photoresist layer (not shown), similar to photoresist layer 19 shown in
A conductive material 20, such as copper or aluminum, is then deposited simultaneously in both the via/contact 20 a and the line/trench 20 b. Once the conductive material 20 is deposited over the feature(s), it too may be exposed to a plasma containing a reducing agent, such as ammonia, to reduce any oxides. Another SiC barrier layer 75 may be deposited over the conductive material 20 to help prevent diffusion of the conductor through subsequent layers.
Another scheme for creating a dual damascene structure is known as a "self-aligning contact" (SAC) scheme. The SAC scheme is similar to the counterbore scheme, except that a photoresist layer is deposited over the etch stop, the etch stop is etched and the photoresist is removed. Then the subsequent layers, such as another dielectric layer, are deposited over the patterned etch stop, an ARC deposited over the dielectric layer, and a second photoresist layer deposited over the ARC, where the stack is again etched. In the embodiment of
The in situ processing is enhanced because of the reduced number of different materials and regimes and, in particular, because the SiC can be used as the barrier layer, etch stop, ARC layer, and even as a passivation layer and moisture barrier. The in situ processing is further enhanced in the preferred embodiment by using the same or similar precursors to deposit the dielectric layers. Reducing or eliminating the need to remove the substrate from the processing chamber between depositing the layers for chamber cleanings and the like improves throughput, reduces downtime, and reduces the risk of contamination.
In some instances, the etching may be performed in the same chamber by adjusting the process conditions. However, in many instances, the substrate may be moved to an etching chamber. In such instances, the processing may be performed within a cluster tool having both a deposition chamber and an etch chamber, such as the cluster tool shown in U.S. Pat. No. 4,951,601, assigned to the current assignee of the invention, and incorporated herein by reference. The sealable cluster tool enables processing within the cluster tool to occur without unnecessary exposure to the ambient conditions. However, where possible a preferred arrangement enables processing within same chamber to reduce the transfer time between chambers for greater throughput.
Furthermore, in situ processing provides accurate control over the rate of transition between the deposited layer and the preceding layer. The transition between the two layers is controlled by the transition between the chemistries and the related process parameters used to deposit the layers. The method of the present invention enables accurate control over the transition via control over the plasma, process gas flow rates, and other processing parameters. The transition may be abrupt and can be achieved, for example, by extinguishing the plasma followed by the deposition of the dielectric layers and the various SiC layers while the substrate remains in the chamber. Gradual transitions can also be achieved, for example, by altering the flow rates of the process gases. In a process which deposits a FSG dielectric layer, the flow rate of silicon tetrafluoride, commonly used for a FSG deposition, may be reduced while increasing the helium or argon flow to create a smooth transition from the dielectric layer to the SiC layer. The flexibility in the transition is made possible by the ability to deposit multiple layers in situ.
The above discussion refers to an exemplary sequence and is not to be construed as limited to such sequence, as such in situ processing could be applied to a variety of sequences. Also, these structures are exemplary for a dual damascene structure and are not intended to be limiting of the possible embodiments.
Because the SiC, as explained below, may be used in multiple capacities, Table 1 shows the desirable aspects of at least three of the uses of the SiC of the present invention as a barrier layer, an etch stop, and an ARC.
As stated earlier, a low κ material is defined herein as a material having a dielectric constant lower than 7.0 which is lower than that of silicon nitride, traditionally used as a barrier layer material. Related to the low dielectric value is the "effective" dielectric constant, which is a composite dielectric constant of the substrate stack with multiple levels. The effective dielectric constant is based on such factors as the layer thicknesses, layer dielectric constants, spacing between features, and feature dimensions. Commercially available software, such as "Rafael" by Avant Corporation may be used to calculate the predicted effective dielectric constant. For instance, a typical value of a low κ dielectric layer is about 2.7. A SiN layer may have a κ value of at least 7.0. Using the SiN material with the low κ dielectric material would increase the effective κ value of the composite and offset some of the advantage of using the low κ dielectric material. In comparison, using the SiC of the present invention with a κ value of less than 5, preferably about 4.2, allows more benefit from using low κ dielectric material to be obtained. A desirable effective dielectric constant value for the composite structure would be about 5.0 or less, most preferably 3.0 or less.
If the SiC is used as an ARC, desirable characteristics would include the low κ aspect described above as well as a suitable refraction index "n" combined with an absorption index "k" and a thickness "t" of the ARC to obtain a low reflectivity below about 5%, although other values may be selected, so that the coating could be used in multiple applications without necessitating process regime adjustments and variations for each application, as is typically needed, prior to the present invention. The process to produce the SiC should be stable and repeatable for manufacturing consistency.
Because the ARC may remain on the substrate because of its low κ attributes, it may also function as a barrier layer between, for instance, an underlying dielectric and a conductor material, such as copper. Adhesion between the layers is important to reduce delamination between the layers and, in some instances, to reduce capacitance and resistance between the layers. When the ARC is used as a barrier layer, the material should also have no substantial diffusion at a substrate annealing temperature of, for example, about 400� to 450� C. The term "no substantial" diffusion is intended to be a functional term, such that any actual diffusion into the layer is less than would affect the ability of the layer to function as a barrier layer and/or etch stop. For instance, the SiC of the present invention limits the diffusion to about 250 Å. The copper diffusion may impair the desired current and voltage paths and contribute to cross talk. Because of the decreasing feature size, as described above, the lower the dielectric constant, preferably less than 7.0, the lower the probability for cross talk and RC delay.
Because the SiC may be used in a damascene structure and function as a multi-purpose barrier layer, ARC, and etch stop as discussed in one embodiment, it would be beneficial to also have suitable etch stop characteristics, such as an etch selectivity ratio of 20 to 1 or greater with respect to USG, FSG, or other low κ dielectric materials. Additionally, the material should have a high breakdown voltage of 2 MV or more, i.e., the voltage gradient at which the molecules breakdown to allow harmful passage of electrical current. The SiC should also have a low leakage characteristic through the layer, i.e., a low stray direct current that capacitively flows through the material.
Table 2 shows the process parameters used to form the SiC layer of the present invention in a 200 mm wafer deposition reactor. In a preferred embodiment, the silicon and carbon were derived from a common compound, such as a silane-based compound. However, the carbon could be supplemented with other compounds, such as methane. Without limitation, suitable silane-based compounds could include: methylsilane (CH3SiH3), dimethysilane ((CH3)2SiH2), trimethylsilane ((CH3)3SiH), diethylsilane ((C2H5)2SiH2), propylsilane (C3H8SiH3), vinyl methyl-silane (CH2═CH)CH3SiH2), 1,1,2,2-tetramethyl disilane (HSi(CH3)2—Si(CH3)2H), hexamethyl disilane ((CH3)3Si—Si(CH3)3), 1,1,2,2,3,3-hexamethyl trisilane (H(CH3)2Si—Si(CH3)2—SiH(CH3)2), 1,1,2,3,3-pentamethyl trisilane (H(CH3)2Si—SiH(CH3)—SiH(CH3)2), dimethyl disilano ethane (CH3—SiH2—(CH2)2—SiH2—CH3), dimethyl disilano propane (CH3—SiH—(CH2)3—SiH—CH3), tetramethyl disilano ethane ((CH)2—SiH—(CH2)2—SiH—(CH)2), tetramethyl disilano propane ((CH3)2—Si—(CH2)3—Si—(CH3)2), and other silane related compounds. For the purposes of this invention, the term "organosilane" as used herein includes any silane-based compound having at least one carbon atom attached, including the preceding list, unless otherwise indicated. A preferred organosilane is given by the structure SiHn(CH3)4-n, where n=1 to 3 or the structure Si2Hm(CH3)6-m, where m=1 to 5. In Table 2, the compounds used were trimethylsilane and methylsilane. A noble gas, such as helium or argon, was present and is believed to assist in stabilizing the process, although other gases could be used.
The process regimes described below provide a SiC material that meets at least some of the characteristics of Table 1 of a barrier layer, etch stop, and/or an ARC. Also, the SiC properties described herein enable a thinner layer to be deposited to achieve desirable film properties. In one embodiment, shown in
The characteristics developed by the above process regimes differ from the generally accepted SiC characteristics. A SiC film according to the present invention was deposited in a DxZ chamber available from Applied Materials, Inc. of Santa Clara, Calif. A reactive gas source such as trimethylsilane was flown into the chamber at a rate of about 30 to 500 standard cubic centimeters (sccm), more preferably about 50 to 200 sccm. A noble gas, such as helium or argon, was flown into the chamber at a rate of about 100 to 2000 sccm, more preferably about 200 to 1000 sccm. The chamber pressure was maintained between about 3 to 10 Torr, more preferably about 6 to 10 Torr. A single 13.56 MHz RF power source applied about 300 to 700 watts with a power density of about 4.3 to 10 watts/cm2, more preferably about 400 to 600 watts with a power density of about 5.7 to 8.6 watts/cm2, to the anode and cathode to form the plasma in the chamber with the silane-based gas. The RF power source may be a mixed-frequency RF power supply that typically supplies power at a higher RF frequency of 13.56 MHz and at a lower RF frequency of 360 kHz to enhance decomposition of the reactive species introduced into the chamber. The substrate surface temperature was maintained between about 200� to 400� C., more preferably about 300� to 400� C., during the deposition of the SiC. The gas dispersion from a gas dispersion element, such as a "showerhead", was dispersed at a showerhead to substrate spacing distance between about 300 to 600 mils, more preferably 300 to 500 mils. The carbon was derived from the trimethylsilane or methylsilane, independent of other carbon sources. The reaction occurred without a substantial source of oxygen introduced into the reaction zone.
With the parameters of Table 2, a different bonding structure occurs in the SiC film of the present invention, shown in
The SiC#1 corresponds to test results using the traditional chemistry for producing SiC, described in U.S. Pat. No. 5,591,566 to Ogawa, which uses a silane with a separate methane/ethane/propane and diatomic hydrogen. This SiC has an n value of about 2.4, and a dielectric constant of about 7.8, undesirable for deposition in low κ devices.
SiC#2 is one SiC deposited using the chemistry of the present invention. The n value is about 2.3 and the dielectric constant is about 5.1. Using the parameters described above in Table 2, the SiC#3 produced better optical characteristics, namely, an n value of about 1.9 at the 633 nm exposure wavelength of
The low κ dielectric layer may be produced by PECVD of an organosilane, an organosiloxane, or combinations thereof, using RF or microwave power to generate reactive oxygen atoms. The dielectric material is deposited using the precursors described above, such as methylsilane or trimethylsilane, reacted in the presence of oxygen, such as with nitrous oxide (N2O). Preferably, the process regimes provided in Table 2 could be used to produce the dielectric layer(s). However, other process regimes can be used to form the dielectric materials. In one embodiment, for instance, an organo-silicon compound was oxidized with preferably N2O such that the carbon content of the deposited film is from 1 to 50% by atomic weight, preferably about 5 to 30%. A mixed frequency RF power supply supplied power at a high RF power of 13.56 MHz to a showerhead of a PECVD system and a low RF frequency of about 360 KHz to the pedestal of the system. A pulsed RF power provided 13.56 MHz RF power at about 20 watts to 500 watts during about 10% to 30% of the duty cycle. Using a 200 mm wafer, the power density of the high frequency RF power was preferably less than about 1 watt/cm2. The low frequency power is driven at about 0 watts to 50 watts for pulsed RF power at a duty cycle from about 10% to 30%. A constant RF power provided 13.56 MHz RF power at about 10 watts to 200 watts. The organosilane and/or organosiloxane was flown into the PECVD chamber at a flow rate of about 5 sccm to 500 sccm and the oxidizing gas at a flow rate of about 5 sccm to 2000 sccm. The low power deposition occurred at a temperature range from about −20� C. to 40� C. The chamber pressure was a low pressure of less than about 10 Torr. The deposited film was cured at the low pressure and at a temperature of about 100� C. to 450� C. The disclosure of the exemplary low κ dielectric material is described in U.S. Ser. No. 09/162,915, and is incorporated herein by reference.
Conversely, if the dielectric layer thickness can be carefully controlled, then the ARC layer thickness can be varied or minimized. For instance, a dielectric thickness of about 6600 Å, plus or minus about 100 Å or about 1.5%, can have an ARC thickness of 50 Å or more and meet the optical parameters of 5% or less reflectivity. Thus, the SiC of the present invention satisfies the desire for a multiple purpose material in providing a barrier layer, etch stop, and an ARC and satisfies the desire for a multiple application material in that a single ARC thickness can meet the optical needs of multiple dielectric thicknesses for a given reflectivity.
In a preferred embodiment, a layer with a preferred thickness of about 600 Å offers one of the lowest reflectivity values across the entire spectrum of the dielectric layer thicknesses, shown as value 78 in the graph. With the unique properties of the SiC of the present invention, an ARC can be deposited that is substantially independent of the underlying layer thickness. The SiC is preferably deposited between about 500 Å to about 1000 Å or more, most preferably about 600 Å, having a predicted reflectivity of about 2% or less, within the preferred 5% or less reflectivity range. This discovery contrasts with the typical need to adjust the n, k, and t characteristics of the ARC layer to the particular thickness of the underlying layer for each application. Here, using the SiC of the present invention, the ARC layer may be a fixed deposition thickness of about 600 Å, independent of the underlying dielectric layer thickness. This fixed thickness contrasts with prior ARC materials which generally require ARC thickness adjustments, depending on the underlying dielectric layer thickness and desired reflectively.
The SiC of the present invention may also be used as a polish stop to determine the end point of a polishing process. After the stack is etched and the features filled with conductive material, some processing sequences polish the upper surface of the substrate surface to remove excess conductive material and planarize the upper surface of the stack. Typically, the substrate is polished by a chemical mechanical polishing (CMP) process, which uses a difference in polishing rates between different materials to determine the limit of polishing.
Because the SiC ARC has a low κ value, the ARC can remain on the substrate and does not need to be removed to maintain an effective low κ substrate. Thus, material may be deposited over the ARC, filling the features. The CMP process then removes any extra conductive or other materials above the SiC layer. The CMP process determines a difference in the polishing rates when the process encounters the SiC ARC and the CMP process is discontinued.
The SiC deposited according to the present invention may also be used as a moisture barrier. The CMP process is typically a wet process and moisture can corrupt a substrate circuit. Therefore, a layer is preferably deposited on the substrate to prevent the adverse effects of moisture which could otherwise result from wet processing. If the SiC ARC is used as a polish stop and an upper layer, the SiC ARC would act as a moisture barrier.
Also, a SiC etch stop of about 720 Å thick could be used with a top dielectric layer thickness of about 6500 Å or about 7300 Å. The thicknesses shown in
Because the SiC of the present invention may be used in proximity to conductive materials, such a copper, that are prone to diffusion through adjacent layers, it is preferable that the SiC be diffusion resistant, as well.
The present invention further provides a substrate processing system having a plasma reactor including a chamber, a reaction zone in the chamber, a substrate holder for positioning a substrate in the reaction zone, and a vacuum system. The processing system further comprises a gas/liquid distribution system connecting the reaction zone of the vacuum chamber that supplies an silane-based compound, an inert gas, and an RF generator coupled to the gas distribution system for generating a plasma in the reaction zone. The processing system further includes a controller comprising a computer for controlling the plasma reactor, the gas distribution system, the RF generator, and a memory coupled to the controller, the memory comprising a computer usable medium including a computer readable program code for selecting the process steps for depositing a low dielectric constant film with a plasma of an silane-based compound.
The processing system may further comprise in one embodiment computer readable program code for selecting the process steps for depositing a barrier layer and/or etch stop of the silane-based compound, depositing a different dielectric layer, and optionally depositing a capping passivation layer of the silane-based compound.
The embodiments shown and described are not intended to limit the invention except as provided by the appended claims. Furthermore, in the embodiments, the order of the layers may be modified and thus, the term "deposited on" and the like in the description and the claims includes a layer deposited above the prior layer but not necessarily immediately adjacent the prior layer and can be higher in the stack. For instance, without limitation, various liner layers could be deposited adjacent dielectric layers, barrier layers, etch stops, metal layers, and other layers.
While foregoing is directed to the preferred embodiment of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow. Furthermore, in this specification, including particularly the claims, the use of "comprising" with "a" or "the", and variations thereof means that the item(s) or list(s) referenced includes at least the enumerated item(s) or list(s) and furthermore may include a plurality of the enumerated item(s) or list(s), unless otherwise stated. Also, any disclosure of methods, including the claims, are presented in a logical order, but are not restricted to the sequence disclosed unless specifically stated.
Referenziert von
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text:
The market, the madness, and the Apple television
It seems you can't read about Apple these days without someone saying that they're about to make a big splash into the television market. Apple, of course, hasn't and won't pre-announced anything. But that hasn't stopped Wall Street analysts claiming that the company's TV strategy is flawed. That's right, Apple's unannounced, unreleased, entirely presumed by someone not-Apple, strategy is flawed. But I digress.
What I don't quite understand is why so many industry pundits seem to think that Apple just has to make a TV set, or else they're screwed. Really people? Really?
I can see why Apple would go ahead and make a large display for the living room. But I definitely don't see it as a requirement. The actual display has become a commodity. It's an HDMI endpoint. TV makers like Samsung are putting more computing power inside the displays to enable Netflix, Plex, or other media services. But they're largely just big screens and that's it.
Apple's strength has been organizing content. They tackled the music industry with more success than any other company on the planet. They have essentially global distribution capabilities. Now they're starting to make progress with TV shows and movies by offering it up through the iTunes in the same a-la-carte manner. Their lead in these markets has to be mapped to be believed. The $99 Apple TV even has premium sports features like NLH and Major League Baseball. I think what Apple really needs to do is bring more content into its platform and then make it easy to display it anywhere - from the iPhone to the iPad to the Macbook or big screen.
Apple already has AirPlay to bring any video from pretty much any other Apple device to a big screen. It seems to me the cheap and cheerful Apple TV doesn't need to turn into a huge display. It just needs to get even better. Guy English wrote a wonderful blog post discussing how he sees the ideal future Apple TV setup and I have to say I agree completely.
For a while now I've been of the opinion that display technology is expensive and slow changing. But the intelligence inside the displays changes quickly. A few years ago TVs didn't come standard with Wi-Fi, nor did they have USB ports that would play DivX files, for example. Why should I need to buy a whole new TV when the part that needs updating could be in the form of a $99 box (like the current Apple TV)? Exactly.
So Apple should beef up its current Apple TV set top box. But then if they want to go ahead and make the most beautiful, well designed 1080p or even 4K display in the universe -- a larger version of the ThunderBolt displays they already make for the Mac -- I will welcome it. And if they want to go one step better, I'd love to see an Apple living room display that can elegantly hold an upgradeable Apple TV module. No need for extra cables and boxes, right?
But one thing is clear to me. Apple doesn't "need" to be in the living room display business. They won't be reinventing the display, they'd just be capitalizing on their design strengths and brand value. I'd be all for that as a shareholder. But don't try to tell me that Apple has no growth unless they explode onto the TV scene. That's just a bunch of nonsense. They real money is going to come from content, billing, the beauty of their ecosystem, and customer stickiness.
Building a giant screen is a nice to have, and nothing more.
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Reader comments
The market, the madness, and the Apple television
I've been saying this since the very first Apple television rumours began! Nice to see more and more people starting to say the same thing. Good post! I completely agree.
Completely agree. It's all about the content. Give me HBO Go on Apple TV next to Netflix and Hulu and I'd never buy cable again.
Re: "I can see why Apple would go ahead and make a large display for the living room. But I definitely don't see it as a requirement."
Agree. It isn't clear to me why Apple would need to enter the low-margin, price-sensitive TV set market. (But then again, I thought it was dumb for Apple to sell the original iPod in a crowded market of MP3 players.)
Re: "They real money is going to come from content, billing, the beauty of their ecosystem, and customer stickiness."
That's it. When Apple moves into a new industry, they first build out a robust software infrastructure. Quietly, behind the scenes, they do deals and write code, test, debug, and iterate the design until it's ready. Then they release the hardware. The tip of the iceberg.
To casual observers (and consumers) it looks like the new Apple product is an overnight success. It's not. For example, the original iPod sold fairly well at first, then gradually ramped up over the first year or two. But iTunes came first, in January 2001. (Remember "Rip. Mix. Burn."?) iPod followed in November 2001. And over the years, Apple has leveraged and expanded the iTunes infrastructure for iPod, iPhone, Apple TV, and iPad, with music, video, books, apps, etc.
So, I think Apple's "Television solution" is already in place. It's the current Apple TV, as an inexpensive set-top box, using customers' existing TV sets as displays. Apple may decide to ship an HD-resolution 55-inch "Cinema Display HD" at some point, but only for completeness. Not as a major profit center. Just to round out their TV product suite, so customers won't need to buy non-Apple gear if they don't want to.
The biggest problem Apple faces in the TV industry isn't hardware engineering or user interface design. It's getting all the content providers on board. They aren't anywhere near as desperate as the record labels were 5 and 10 years ago. And they each have their own oddball internet content delivery schemes. It could take a long time for Apple to convince them that iTunes + Apple TV is better.
And, as you said, Apple's profits in the TV industry will come from content and billing. Not from hardware sales. Apple will always be able to command a premium, but I don't think a living room-sized Cinema Display will be a big money maker. And the Apple TV, at $99, certainly isn't. Apple will need to make their profits by selling and renting content. And they'll need to pull customers in with a vastly better TV experience than anyone else. The same way iPod made it vastly easier to bring your music with you.
Great comment. I think Apple can do well by making very little on their set top box just to cement their position in the living room and create stickiness to their platform, making money from content sales and recurring product purchases.
A $99 box makes it a no brainer to go the Apple way. Then if you really love it, a $1500 TV made by Apple might make sense too, at some point. But it can't be forced.
You're right. Their solution is already in place.
The problem is, in the USA at least, the solution will not scale in the absence of Net Neutrality regulations with teeth. If Apple TV starts to cut significantly into cableco subscriptions, cablecos who are also ISPs (i.e. everywhere) will suddenly find it necessary to shape their traffic dramatically, and to enforce bandwidth caps (caps towards which their own offerings will not apply). It will degrade streaming based services like AppleTV, and customers will complain, but cablecos will cry loudly that this is legal and necessary to protect the interests of their customers. In reality, they will be seeking to squash a disruptive product, and have the pipes to do it, as long as the law continues to allow it.
TV is starting to catch up with what I've always thought it should be... Content providers put everything on servers - and people watch it on demand... you could have it at different levels of service - free, ad supported content streams, or iTunes-like commercial free season passes for shows like one can get now. The 'last mile' bandwidth issue to the end users has been the hurdle for this kind of offering is less and less an issue every day. I've been looking forward to this for 30 years.
> Building a giant screen is a nice to have, and nothing more.
Nonsense. And besides, when another maker makes a great all in one "smart TV" that consumers choose, then Apple is locked out in the cold. If their TV experience is good enough, then you've no need to buy and plug in an Apple TV. How does Apple stop this from happening? Buy making that product themselves.
In 10 years time this blog post will be laughable.

subset: commoncrawl


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Thursday, October 31, 2013
All was quiet aside from the gentle slap of a paddle on the water as about 10 passengers boarded a canoe and embarked across the dark swamp at Cypress Gardens.
The first sight was a cemetery of white crosses on the left shore followed by a skeleton pirate steering a stationary boat to the right.
Screams were heard ahead from other canoes as this canoe's paddle-man bumped the vessel into cypress tree roots that sometimes seemed to open doors on creaking rafts until BOO! - a ghoul jumped out of nowhere on a nearby raft and screams.
The canoe passes a face-down, headless figure in a plaid shirt and khakis. The canoe passes another. And another.
Suddenly a splash out of the water from the back left - it's the head and shoulders of a creature with yellowish-white skin and protruding red veins that thrashes and screams at passengers, who on this vessel remain mostly unruffled.
This was the scene Oct. 19 at the 16th annual "Halloween in the Swamp."
The haunted swamp experience is not recommended for children 12 and under unless they are accompanied by an adult. Children age six and under are not allowed.
For younger children there is a pumpkin trail, a talking great pumpkin, a jump castle, marshmallow roast and scary stories told by Kim Dillinger.
But those who made it through the haunted swamp experience witnessed phantoms spring out of the water to terrorize the otherwise serene night. The journey is not over when passengers reach the presumed safety of the dock.
A human-like creature, a werewolf perhaps, has a bloody face as they follow these brave souls into the haunted house where strobe lights take over and more creatures of the Halloween season jump out from behind or follow so closely their breath can almost be felt on the back of your neck.
Outside the house a bride in a dirt-desecrated wedding gown leaps from the shadows. The adventure scurries on toward a vintage hearse carrying a skeleton.
The coffin is behind the hearse's open back hatch. A a living figure creeps out of the eerie red light in the coffin as more haunted creatures frighten the adventurers.
The trail's live actors, who are volunteers, wore haunting makeup and outfits as they scared the daylights out of the so-called "victims" whom they snuck up on from behind and out of the shadows.
The creatures in the water were played by divers who were under the water in a dark, swampy lagoon.
Cypress Gardens Site Manager Heather Graham said about 80 volunteers helped on each of the three nights along with employees.
She said countless props were used. Some volunteers brought their own and some were built at Cypress Gardens.
This year's temperatures allowed for six to seven divers, about twice the normal amount, to sneak out from dark waters and scare boat riders.
One of those divers was Cypress Gardens Director Dwight Williams.
"This year it was a bit warmer," Williams said. "That meant I could stay out there all night. Usually when it's cooler we split the shifts in two.
"We probably would've had half as many in the water if it had been cold. We had more divers than usual this year. That was fun.
"We're not really scuba diving with air tanks, but we're wearing black wetsuits which gives us a good way to hide. You try to station yourself in a position so the water is not too deep so you can push off the bottom."
Williams said divers hide their faces behind trees or stumps and jumped out at the middle of the boat to scare the passengers.
He said the divers do not worry much about alligators and snakes.
"We have our captive alligators and we can see what's happening with their appetites," Williams said. "They had laid off food for the past two weeks.
"This event makes so much noise in the front part of the swamp that the wild alligators retreat. They're not looking for a lot of attention. I've been in the water out there for 12 years and I haven't had a problem yet.
"It takes a lot of work to get ready. It's kind of homegrown compared to a lot of other Halloween events. It takes about as long to put the gardens back as it does to decorate it."
Five days after the final event workers were close to having the gardens back to normal, Williams said.
"The turnout was good. Thursday was a little lighter than last year when school was out on Friday. We are thinking of just doing Friday and Saturday next year.
"We limit it to about 500 (guests per) night."
Williams said the public is only allowed to visit Cypress Gardens at night for special events.
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Commissioner Jonathan Pitts, who also serves as recreation committee chairman, began the June 20 meeting by circulating copies of bylaws from an active advisory committee in Cobb County. Pitts said Jimmy Gisi, Georgia Recreation and Park Association executive director, sent him the bylaws following a conversation at the recent commissioners training at Lake Lanier.
Jones County Recreation Director Matt Goins said the Cobb County board has seven members who are selected by the board of commissioners through an application process.
"The advisory board sets policy, establishes rules and bylaws," Goins said.
Pitts said it is a good start for Jones County to have an example to use to develop its own bylaws. He suggested a work session with the commissioners to get started.
Goins agreed.
For the full story, pick up a copy of this week's newspaper or subscribe to our e-Edition at http://ee.jcnews.com.


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foul smelling diapers got worse and worse, to the point where I sent a foul smelling diaper in to our pediatrician because it wasn't normal for poop to smell this bad. His constant sickness culminated in a high fever and antibiotic injection. After which, he lost the ability to point, wave and blow kisses and lost eye contact for 24 hours and lost the few words he had.
Because his regression was so severe with both verbal and non verbal regression, I put him on a gluten free casein free diet the next day and begged our pediatrician to get us into a GI doctor who eventually found two genes for celiac. He got better on a gluten free/casein free/soy free diet, but he still reacted to other foods. He was diagnosed by a developmental pediatrician with an "allergy syndrome" and "verbal processing delay."
A friend whose child had gotten better from dietary intervention suggested that we see Dr. Fred Pescatore, who does food allergy testing including a food sensitivity panel of 150 foods. On the ALCAT test, he was most intolerant to: oranges (something he had had ONCE in his life and had a severe reaction to.) He had a medium intolerance to: broccoli, almonds, avocado, and black pepper. When we removed these things from his diet his constant red cheeks went away and he got better.
I had tried to figure out where his reactions were coming from, but he seemed to always be reacting to something. ALCAT testing was the ONLY thing that helped us get to the bottom of his intolerances.
A year later, my son started to develop constant red cheeks again and to be sick again.My husband and I tried to figure out what was making him react. We searched labels for ingredients to try to figure out what was happening. Then, desperate, we returned to the ALCAT test to find his new intolerances: chocolate, almonds, avocado, blueberries, bananas and lemons. He was reacting to the lemon flavoring in his multivitamins and the chocolate chip cookies I made with almond flour and the bananas he would eat every few days. AGAIN, when I took these things out of his diet, he recovered from the red cheeks and subtle regression that I was observing.
In our case,the ALCAT test was an important tool that helped us figure out the foods he was sensitive to.
Allergists, with their reliance on IgE testing mainstream allergy testing DID NOT HELP MY SON. It is sad that I knew he was reacting to food and that the mainstream allergists could not give me helpful information and following their recommendations HE GOT WORSE until I found Dr. Pescatore, who did the ALCAT testing and Dr. Teich, who understood both mainstream medicine and alternative approaches.
I know the mainstream medical community's reluctance to include a test which changes over time. But, I want them to know that this test helped more than most of the doctors I have seen and it needs to be considered for patients who know they have food sensitivities but who test negative on typical allergy tests.


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text:
Friday, March 29, 2013
Students from 47 public schools throughout the tri-county area battled for top honors at the 27th Annual Quest Academic Competition held today at Trident Technical College. Approximately 1,200 students participated in this year's Quest. The competition was developed by TTC to promote academic excellence, provide an academic challenge to students, and recognize top students, teachers and schools.
Students participated in four levels of competition: Level I-grade 6, Level II-grades 7-8, Level III-grades 9-10 and Level IV-grades 11-12. Students competed and earned points in team competitions in math, science and social studies, and in individual competitions in composition, public speaking and visual arts. Schools whose students earned the most total points won overall awards at each level. Special competitions that did not contribute points toward the overall awards were held in automotive, computer aided design, computer programming, culinary, engineering design and construction, French, Spanish, video/film and welding.
Overall School Winners
Level I (Grade 6)
First Place: Rollings Middle School of the Arts
Second Place: Alston Middle School
Third Place: Cane Bay Middle School
Moultrie Middle School
Oakbrook Middle School
Level II (Grades 7-8)
First Place: Thomas C. Cario Middle School
Second Place: Rollings Middle School of the Arts
Third Place: Laing Middle School of Science & Technology
Level III (Grades 9-10)
First Place: Academic Magnet High School
Second Place: Summerville High School
Third Place: Stratford High School
Level IV (Grades 11-12)
First Place: Ashley Ridge High School
Second Place: Wando High School
Third Place: Academic Magnet High School
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text: Prev | Next Purchase this photo Billy Summers/The Putnam Herald Members of the Visual Volume Show Choir perform during their annual dinner theater fundraiser at Poca High School on Saturday, Jan. 5, 2012. Proceeds from the event Ñ which included a debut of the Visual Volume's 2013 competition show Ñ will help pay for the choir's expenses as it travels to competitions around the state and beyond. Gallery: Putnam in Pictures, Friday, Jan. 11 Jan. 11, 2013 @ 10:37 AM The Herald-Dispatch / 2015 Did you miss something in Putnam County this week? Chances are, one of our photographers was there. ()


text: What kind of help do you need? (Examples:"Panda Security installation", "I want to contact Panda") Tweet Error 0001:0005 when trying to activate my Panda 2013 product Information applies to: Products Panda Global Protection 2013Panda Internet Security 2013Panda Antivirus Pro 2013Panda Ultrabook ProtectionSymptoms Error code 0001:0005 returned when activating your Panda 2013 product.Solution In order to solve the problems related to the error code 0001:0005 during the activation procedure, the option UAC (User Account Control) protection must be disabled. This solution is only applicable to Microsoft Windows Vista operating systems.Note: Disabling UAC will lead to a less secure system, so don´t forget to re-enable the UAC option as indicated in the instructions.Basic instructions Access the Control Panel.Type in UAC in the search box and click Enter.In User accounts, click the link Turn User Account Control (UAC) on or off.On the next screen, uncheck the box Use User Account Control (UAC) to help protect your computer. Then, click OK.IMPORTANT: reboot your computer for the changes to take effect.Launch the activation wizard again in order to verify it the problem has been solved.Now, re-enable the Use User Account Control (UAC) to help protect your computer option again. Then, click OK.Reboot the computer.Instructions for advanced users This method consists on using the msconfig system tool:Click the Vista start up icon (Windows logo).Type in msconfig in the Run menu.Select the Tools tab.Scroll down till you find the Disable UAC option.Click that line.Press the Launch button.A CMD window will open. When the command is done, close the window.Close msconfig.Important!: Reboot the computer for the changes to take effect.Launch the activation wizard again in order to verify if the problem has been solved.In order to re-enable UAC, select the Enable UAC line and then click the Launch button.Useful linksFor more information, refer to the Microsoft TechNet portal on UAC security protection.Help nº- 20120903 80517 EN Help us improve our service by letting us know your opinion. Your suggestions will help to resolve your questions more quickly and effectively. Have you resolved your query with this article? YES NO Thanks for your answer How would you improve this article? Do you want to contact TechSupport?


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|Hong Kong
|High School:
|Diocesan Girls' School
|Previous College:
|Concordia (CA)
2011-12 CSUN Big West Scholar Athlete of the Year
2012 All-Big West Singles First Team
2012 All-Big West Doubles First Team
2011 All-Big West Singles First Team
2011 All-Big West Doubles First Team
Sher earned All-Big West First Team honors in both singles and doubles in her senior season with the Matadors … finished 14-7 overall and 5-3 against Big West opponents in singles, competing solely at the No. 1 draw … had a season-long five-matching winning streak during the season … recorded notable victories over UCSB twice, Gonzaga, Portland, UC Davis, Pacific, LMU and San Diego State … finished 14-6 overall and 5-3 in Big West play in doubles play, competing solely at the No. 1 draw and with Sabrina Man-Son-Hing … duo had a season-long six-match winning streak … defeated UCSB, Gonzaga, Furman, UC Irvine, UC Davis, pacific, LMU and San Diego State among others … earned Big West Player of the Week honors twice during the season, once for her play against Portland, Bowdoin and UTEP and the other time for her play at UC Davis and Pacific … Sher concluded her two seasons at Northridge with a 31-12 (.721) mark in singles and a 35-9 (.795) record in doubles … she was also named the CSUN Big West Conference Scholar-Athlete of the Year for the 2011-12 academic year … Sher leaves CSUN ranked fourth in school history in singles career winning percentage and second in doubles career winning percentage.
Sher posted a 21-3 doubles mark and 17-5 record in singles action in her first year at Northridge ... earned All-Big West Doubles First Team and All-Big West Singles First Team honors ... teamed with Brooke Doane to finish 16-2 on the season and 6-0 against Big West opponents, all at the No. 1 draw, to earn All-Big West Doubles First Team honors ... duo recorded notable victories over San Diego State, Long Beach State, Cal Poly twice, Dartmouth and Pacific ... as with Doane, her 21 individual doubles wins on the season ties a school record for a single season ... also teamed with Sabrina Man-Son-Hing to post 5-1 doubles record ... duo picked up notable victories over UC Santa Barbara, Columbia and Portland ... recorded 7-1 doubles record against Big West opponents ... in singles action, played primarily at the second draw and finished with 6-2 mark against Big West opponents ... recorded notable victories over Cal Poly twice, UC Davis, San Diego State, UC Santa Barbara, LMU and Pacific ... named Big West Tennis Athlete of the Week twice during the season ... earned first weekly award on Mar. 2 after she went 3-1 in singles play and a perfect 4-0 in doubles action as the Matadors went 3-1 on their trip to Hawai'i ... earned second weekly honor on April 27 after helping the Matadors to a league victory over Pacific on senior day ... her .773 season winning percentage in singles is tied for 10th in school history for a single season ... her season winning percentage of .913 in doubles play ranks as the sixth-best figure in school history.
Concordia Univeristy
Sher spent the 2009 and 2010 seasons with the Eagles ... played at No. 1 singles and doubles during fall and spring season ... named the 2009 NAIA-ITA Rookie Player of the Year ... named a 2009 and 2010 NAIA-ITA All American ... compiled a 49-9 singles and 37-7 doubles record in two years.
Diocesan Girls' School
In Hong Kong, Sher played for Gordon Cheung from 2002-08.
Born on February 28, 1991 ... daughter of Mickie Lai Mei Yuk and Terence Sher Pui Cheng ... has a sister, Pui Wing Sher, who plays tennis at Seton Hall ... favorites include the LA Lakers, Jackie Chan, Roger Federer and Julia Roberts ... says the best thing about being a student-athlete is staying in shape ... would cast Kirsten Dunst to portray her in an autobiographical film ... cannot imagine going a week without her laptop ... majoring in Psychology.


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DAVID SIKES/CALLER-TIMES The Reeves family decided to hunt a public field off Highway 77 when they learned our dove patch was drenched for the Saturday morning hunt.
DAVID SIKES/CALLER-TIMES Rebecca Reeves, 8, announces the bagging of her father's second dove of the morning in a milo patch south of Kingsville.
DAVID SIKES/CALLER-TIMES I'm not certain whether this is her first dove. But I know its her first dove of the season.
DAVID SIKES/CALLER-TIMES This young hunter had to chase down this dove in a muddy field near Ricardo on opening weekend of the South Zone Dove Season.
DAVID SIKES/CALLER-TIMES A group of hunters returns from the morning hunt on opening day of the South Zone Dove Season south of Kingsville. Notice the young hunters.
DAVID SIKES/CALLER-TIMES This yellow garden orb weaver spider constructed its web near the gate of our dove patch. Notice the mosquito caught in the web.
DAVID SIKES/CALLER-TIMES Tommie, a 6-year-old female golden retriever entertained the kids after the morning hunt on opening day.
DAVID SIKES/CALLER-TIMES There was a slight mist in the air above our very green dove patch on opening day. But birds were flying.
DAVID SIKES/CALLER-TIMES Rebecca Reeves, 8, puts ear plugs in her brother Travis' ears while standing beside their dad during opening weekend of the South Zone Dove Season.
DAVID SIKES/CALLER-TIMES Found it. This young hunter bagged a fair share of doves during the weekend opener south of Kingsville.
DAVID SIKES/CALLER-TIMES Several hunters south of Kingsville bagged limits of dove on Sept. 20, where the weather wasn't too bad.
DAVID SIKES/CALLER-TIMES This young lady went back to the truck during opening morning to fetch a pair of boots. I'm not sure whether the boots belong to her or her dad.
DAVID SIKES/CALLER-TIMES This gives you an idea of ground conditions at our dove patch. Actually the milo field wasn't too sloppy thanks to sandy soil.
DAVID SIKES/CALLER-TIMES Haiden Mensik returns from a flooded corner of a milo patch with a limit of blue-winged teal. This was the same field where days earlier we hunted doves.
DAVID SIKES/CALLER-TIMES A young hunter assumes a conspicuous perch atop a line of baled milo.
DAVID SIKES/CALLER-TIMES Houston-area wingshooter Roger De Spain and his golden retriever Tommie assisted in several dove searches for fellow hunters during opening weekend of the South Zone Dove Season.
DAVID SIKES/CALLER-TIMES Austin wingshooter Dan Grant and his vizsla pup return from the Friday morning hunt. They look happy.
DAVID SIKES/CALLER-TIMES Game Warden Jason McFall paid us a visit on opening day. Here he checks a hunter's shotgun to make sure it holds no more than three shells. It was legal.
DAVID SIKES/CALLER-TIMES Rebecca and Travis Reeves return from a dove retrieve with their dad, Billy Reeves, during a drizzly opening weekend hunt.
DAVID SIKES/CALLER-TIMES Becca Reeves, 8, was happy to be in a muddy milo field with her mom, dad and brother during opening weekend.
DAVID SIKES/CALLER-TIMES Several days after the dove season opener we hunted teal down the road from the milo field. Here's Aubrey Black's lab Rocksy returns with a blue wing.
DAVID SIKES/CALLER-TIMES Good girl! Rocksy surpassed 1,000 retrieves this past season. She's 8 years old and going strong.
DAVID SIKES/CALLER-TIMES New Orleans wingshooter Rod Felder waits for doves to fly his way in a very green harvested milo field south of Kingsville on opening day.
DAVID SIKES/CALLER-TIMES Roger De Spain and his golden retriever Tommie enjoy time in the field during opening day of the South Zone Dove Season near Ricardo.
DAVID SIKES/CALLER-TIMES Roger De Spain was one of several hunters who brought bird dogs to our dove patch. The weather was fairly comfortable for the dogs, which often is not the case during opening weekend in South Texas.
DAVID SIKES/CALLER-TIMES Tommie is 6 years old and spends most of her time in the field chasing pheasant. But owner Roger De Spain says she'll retrieve any bird he shoots.
DAVID SIKES/CALLER-TIMES There is no such thing as a board kid in a dove patch. Here Travis Reeves, 5, makes a game out of retrieving spent shotgun shells for our group.
DAVID SIKES/CALLER-TIMES A cloudy sunrise greeted hunters during the Friday opener near Ricardo. Saturday morning it rained hard.
DAVID SIKES/CALLER-TIMES Tammy Reeves, a science teacher at Refugio High School, entertains her son Travis during the second day of the South Zone Dove Season.
DAVID SIKES/CALLER-TIMES BB guns help provide early lessons in handling firearms and safety. And target practice can lasts until the BBs are all spent.
DAVID SIKES/CALLER-TIMES Travis, 5, lasted until nearly 5 p.m. following a long day in the field.
DAVID SIKES/CALLER-TIMES Travis Reeves, 5, takes a short nap during the afternoon hunt on Day 2 of the South Zone Dove Season south of Kingsville.
DAVID SIKES/CALLER-TIMES A boy in camo and a Labrador puppy. Hopefully similar September scenes graced dove fields throughout Texas.
DAVID SIKES/CALLER-TIMES Travis Reeves, 5, gained a new friend as his first day of hunting came to a close.
DAVID SIKES/CALLER-TIMES These young hunters are part of the freshman class of Texas hunters. Usually this is all it takes to recruit the next generation of conservationist/hunters.


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CHATTANOOGA, Tenn.---The Chattanooga Mocs (2-1) ran away from visiting Montreat (3-3) 108-51 this evening in McKenzie Arena. Five Mocs scored in double digits in the 57-point win.
"I thought that we did some good things," Head Coach Will Wade noted after the game. "Forcing 20 turnovers is good, but I thought we took some steps back in other areas. Our half-court defense was better tonight than it has been.
"I was disappointed that we couldn't get our full court pressure going tonight, we just didn't have it tonight," Wade continued. "We weren't as into it as we needed to be. We've got to work on starting the games better. We haven't started well all season."
Gee McGhee (Baton Rouge, La.) led the way with 16 points and a career-high five steals. Z. Mason (Nashville, Tenn.) had a double-double with 15 points and 12 rebounds, while Casey Jones (New Orleans, La.) contributed 12 points with career highs in rebounds (7) and steals (3).
Mason and Jones paced a Chattanooga glass clearance tonight. The Mocs held a 47-25 margin on the boards and scored 26 second chance points on 19 offensive boards.
It was a two-point game early, 16-14 with 12:27 to go in the first half, when the Mocs defense changed the game. They went on a 31-11 run holding Montreat without a field goal for more than 10 minutes leading to a 21-point halftime cushion, 55-34.
A 10-0 run to open the second 20 minutes pushed the lead to 65-34 capped by a McGhee lay-in at 15:45. It swelled to 42, 87-45, on an Andrew Houts (Trenton, Ga.) three-pointer at 8:27.
The sequence of the night came from freshman post T.J. Williams (Wilmington, N.C.). He blocked Myles Marshall's shot in the paint and hustled down court. He was rewarded by Jones who hit the big man for a thunderous slam making it a 52-point game, 101-49, with 3:50 to go.
La'Bris Adams scored 17 to lead the Cavaliers with 11 of his 17 coming at the free throw line. Melvin Irvin added 12 points.
Lance Stokes (Orlando, Fla.) also had a career high tonight with eight rebounds. Alex Bran (Memphis, Tenn.) and Martynas Bareika (Kedainiai, Lithuania) came off the bench to score 13 and 11 points, respectively.
Chattanooga shot 55.7 percent (39-70) from the field including 43.5 percent (10-23) from beyond the arc. It limited its visitors to 37.8 percent shooting, a mere 29.2 percent (7-24) after the break.
The Mocs remain home welcoming Kennesaw State on Tuesday, November 19. The game tips off at 7 p.m., with the athletics department celebrating the career of local sports anchor Darrell Patterson who retires in December after nearly 40 years servicing the Chattanooga TV market at News Channel 9 (WTVC).
Links to video (PPV), audio (free) and live stats can be accessed on GoMocs.com, and fans can follow @GoMocsMBB on twitter for live updates. Tickets are available on GoMocs.com or by calling the ticket office at (423) 266-MOCS (6627).
GoMocs.com is the official website of the Chattanooga Mocs. The Mocs can also be followed on their official Facebook page or on Twitter. Find out how to join the UTC Mocs Club and support more than 300 student-athletes by clicking here.


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