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After much planning, I finally hosted my first "women's grilling clinic" and it went off without a hitch! 12 friends, friends of friends or girls I wanted to get to know better attended my clinic and were officially my test subjects for more clinics to come. I initially created the event via facebook to invite […]
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As you might imagine, we went through several site designs before arriving at where we are today. Our user feedback indicated that from our original design, the content was too far down the page. The featured articles were below the fold and there was not enough teaser text to entice our readers.... Read more
Like any ongoing collaborative project, opensource.com will change and evolve over time. Your participation will shape it, improve it, and make it more relevant over time. If you see a way to make opensource. com better, or if there's something that really bothers you, we want to know. This is our... Read more


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What can say about MJM Magic? Everything is just excellent! I found the RAVEN at a better price on another site and they gave it to me for that...Read More ->
I have to say that MJM Magic is one of the best sites out there. They have great communication, fast shipping/turn around time, and will do their...Read More ->


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Umar Farooq
December 19, 2012
Related Links
News : Shahid Afridi cut from ODI squad
Players/Officials: Misbah-ul-Haq | Shahid Afridi
Series/Tournaments: Pakistan tour of India
Teams: Pakistan
Shahid Afridi, the Pakistan allrounder, could be considered for the ODI squad for the tour of India, days after he was dropped from the same, according to ODI captain Misbah-ul-Haq. Afridi looked in good form during the ongoing practice matches at the conditioning training camp ahead of the India tour, scoring two back-to-back half-centuries to press his case for a recall. He was, however, named in the Twenty20 squad.
"If his form remains like this and we need him, we will definitely consider him," Misbah said at the Gaddafi Stadium in Lahore. "The form of senior players, who are experienced enough, is very important. They are seniors, whenever you give performances like this it will be good for Pakistan."
Afridi had a poor World Twenty20 in Sri Lanka, where he scored 30 runs in six matches at an average of six and claimed four wickets at 42.74. In his last 12 international innings across all formats, he averages 6.30 with the bat. He failed to make an impact in the recently concluded national Twenty20 competition and looked rusty.
However, during the one-day practice matches, he scored 52 off 40 balls on Monday and clubbed another impressive 92 off 64 balls on Wednesday. He looked composed and controlled with the bat, cutting, sweeping and executing with a straight bat rather than slogging wildly. A lofty six over the bowler's head into the dressing room was perhaps the biggest hit in the last three days. But if he is to cement his place in the side as an allrounder his bowling needs to improve. At the moment, though, his power hitting is a positive for Pakistan.
Misbah said Inzamam-ul-Haq, Pakistan's batting consultant, has given the batsmen tips on how to tackle pressure while playing against India. "Inzamam has been very useful in helping us prepare both psychologically and mentally - what type of hurdles we are going to face, how to get out of it, how as a batsman you should carry yourself," Misbah said. "No doubt in India-Pakistan cricket you have to play aggressive cricket and we will try to apply it over there."
Misbah was wary of India despite their defeat in the Test series against England at home. "There is no point underestimating them. We will have to play hard cricket. Every bowler has a role to play. Against India you need a balanced attack," Misbah said, stopping short of naming Saeed Ajmal as their key bowler. "You can't depend on any one, otherwise you will be under a lot of pressure. India has depth in their batting line-up and you can't catch them with any one bowler."
|Comments have now been closed for this article
Pakistan should not welcome Amir back
The serene team culture cultivated by Misbah and his men shouldn't be allowed to be disrupted by a player with a tainted past
'I don't blame Arjuna for my early retirement'
Former Sri Lanka batsman Asanka Gurusinha talks about playing and coaching in Australia, and tactics during the 1996 World Cup
'I'm a bit disappointed not to get that Test average up to 50'
Mahela Jayawardene reflects on his Test career, and the need to bridge the gap between international and club cricket in Sri Lanka
Dhoni's absence a guide to India's future
He's past his use-by date as a Test captain and keeper. India now have a chance to test Kohli's leadership skills
Rohit's record, and captains' equal scores
Also, scoring a hundred and opening the bowling, the youngest Australian player, and scoreless in three Tests
Pakistan should not welcome Amir back (181)
The serene team culture cultivated by Misbah and his men shouldn't be allowed to be disrupted by a player with a tainted past
November games need November prices (70)
An early start to the international season, coupled with costly tickets, have kept the Australian public away from the cricket
'I'm a bit disappointed not to get that Test average up to 50' (58)
Mahela Jayawardene reflects on his Test career, and the need to bridge the gap between international and club cricket in Sri Lanka
A crisis that defines the age (37)
Never mind cricket's absence from free-to-air TV - changes in social attitudes, the demands of work, and an individualistic age are all contributing to a decline in participation
Pujara and the challenge of being a Test-only batsman (34)
Shorter tours don't allow you time to get into form, and domestic cricket isn't demanding enough


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|Quiet culdesac in heart of North Potomac- Gleaming Hwd Flrs 1st and 2nd level- Upgraded Kitchen w/ new appliances and Granite counters- Deck- 1st floor study and fam rm-Inviting Sunroom- Enormous Master suite with large walk in closet - 3 additional bedrooms with ample closets and 2 additional full baths upstairs- fully finished lower level with level exit and 2 br/den 2 full baths-Enormous Lot
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Latest Issue
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Providing the latest business, scientific, and regulatory news for the pharmaceutical and biotech industries.
News from Europe's pharmaceutical manufacturing industry coupled with upcoming events, and exclusive articles and interviews from industry experts.
Manufacturing-Alert System Enhances Notification Process
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207 S Dacotah St,
Los Angeles, CA, 90063-0900
Los Angeles, CA, 90063-0900
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This school was sadly and unkindly closed in 2012 by the leaders of the Free Methodist Church of Southern California
School Overview
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Los AngelesOur Lady Of Talpa School
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Los AngelesAssumption School
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Los Angeles, CA, 90063
(323)269-4319(Roman Catholic)0.7 mi | 163 students | Gr. K-9
Los AngelesSchool Of Santa Isabel
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Los AngelesCristo Viene Christian School
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Los AngelesPlaza Child Development Center
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(323)268-9640Daycare / Preschool0.9 mi | 30 students | Gr. K
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What do you do when you are dissatisfied with your local public schools? Homeschool your children? Send them to private school? Let's look at your options.
Your religion matters to you. You want your child to attend a school which will combine academics and religious education. Here is an overview of what is available together with some links to denominational web sites.
Add things up and you'll quickly find the answer- math is crucial both in academics and the real world. By following these strategies and following personal training programs, students can uncover their weaknesses and conquer math.


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text:
A method that uses a goodness of fit test/measurement (e.g., correction coefficient) for process control of a test parameter (e.g., resistance). At least the minimum number of test values required to calculate a goodness of fit test is obtained. A curve is fitted for the test parameters values and the independent variable(s). A goodness of fit measurement/test (e.g., correlation coefficient) is calculated for the curve and data. The goodness of fit measurement value is used for process control. Control limits can be established on the goodness of fit measurement values. The use of the goodness of fit test is a sensitive test that can used to control processes with low level defects or small fluctuations.
1. A test method comprising:
providing first, second and third test structures on a wafer with first, second and third test structure parameters comprising resistive portions from which test measurement values of resistances are measured, wherein the resistive portions comprise effective lengths and effective widths;
obtaining test measurement values from the test structures;
calculating a goodness of fit value for a fitted curve between the effective lengths divided by the test measurement values and the effective widths of the resistive portions; and
using said goodness of fit value to monitor processes used to form a device.
2. The method of
3. The method of
using control limits on the goodness of fit value, wherein the control limits are established based on a history of goodness of fit values or on device requirements; and
using said goodness of fit value to control the processes used to form the device or to screen the device.
4. The method of
5. The method of
6. The method of
7. The method of
8. The method of
9. A test method comprising:
a) providing a device structure that has at least a first test structure, a second test structure and a third test structure incorporating resistive portions from which resistance is measured;
(1) said resistive portions having an effective length (Lx) and an effective width (Wx),
(2) said first, second and third test structures have resistive portions with different effective widths (W1 W2, . . . Wi);
(3) said resistive portions of said first, second and third test structures have effective lengths (L1, L2, . . . Li);
b) measuring the resistance (R) of the test structures;
c) calculating a goodness of fit value for a fitted curve between:
(1) said effective lengths divided by the measured resistances (L1/R1, L2/R2, . . . Li/Ri); and
(2) the effective widths (W1, W2, . . . Wi) of the resistive portions of the test structures;
d) using said goodness of fit value to: (1) control processes used to form the device structure or (2) screen the device structure.
10. The method of
11. The method of
12. The method of
13. The method of
14. The method of
15. The method of
16. The method of
17. The method of
18. The method of
(1) the effective lengths divided by the measured resistances (L1/R1, L2/R2, . . . Li/Ri); the effective lengths of the test structures are equal(L1=L2= . . . Li); and
(2) the effective widths (W1, W2, . . . Wi) of the test structures; and
(3) the temperature.
19. The method of
the goodness of fit value is calculated on measurements made on the test sites on said wafer.
20. The method of
21. The method of
22. A method for estimating defect levels by measurements related to resistance of an interconnect layer in a process for manufacturing an integrated circuit, said method comprising the steps of:
a) fabricating on a wafer, using processes, at least a first test structure, a second test structure and a third test structure incorporating a resistive portion from which a resistance is measured;
b) said resistive portion having an effective length and an effective width, said effective length being substantially greater than said effective width, and said effective width being selected to be substantially greater than an expected critical dimension loss for said processes;
c) measuring said resistance of the test structures; and
d) deriving the sheet resistances from the resistance measurements;
e) calculating a goodness of fit value between the one divided by the sheet resistances (1/Rs) and a second parameter;
f) using said goodness of fit value to: (1) control the processes used to form the test structures or (2) screen the test structures.
23. The method of
24. A test method comprising:
providing a device structure that has at least first, second and third test structures, the test structures comprise resistive portions having effective lengths and widths from which a test parameter of resistance is measured;
measuring test parameter values on the test structures;
calculating a goodness of fit value for a fitted curve between the effective lengths divided by the test parameter values and the effective widths of the resistive portion;
d) using said goodness of fit value to control processes used to form the device structure or to screen the device structure.
25. A test method comprising:
providing a device structure on a wafer that has a plurality of test structures with respective test structure parameters;
measuring a first test measurement, a second test measurement and a third test measurement on at least a first test structure, wherein the first test structure is a resistance test structure that has a effective length (L) and effective Width (W), the first test measurement is a resistance test measurement;
calculating a goodness of fit value for a fitted curve between at least,
the first test measurement performed under a first test condition,
the second test measurement performed under a second test condition, and
the third test measurement performed under a third test condition,
wherein the test conditions have different temperatures,
wherein the goodness of fit value is for a straight line fitted to the effective length (L) divided by the resistance (R) vs. the effective width (W); and
using the goodness of fit value to control processes used to form the device structure or to screen the device structure.
26. The method of
27. A method of forming a device comprising:
providing test structures on a wafer, the test structures having respective test structure parameters comprising resistive portions from which test measurement values of resistances are measured, wherein the resistive portions comprise effective lengths and effective widths;
obtaining test measurement values which are based on the test structure parameters;
determining a goodness of fit value based on the effective lengths divided by the test parameter values and the effective widths of the resistive portions; and
screening wafers on which devices are formed based on a scrap limit established from the goodness of fit value.
28. The method of
29. The method of
30. The method of
31. The method of
32. The method of
1. Field of the Invention
This invention relates generally to methods to control processes and to screen product and more particularly to a statistical process control method for using regression analysis and goodness of fit measurements to control processes and/or to screen devices and more particularly to a statistical process control method for using goodness of fit measurements to control electronic/semiconductor manufacturing processes, such as resistance and void defects in conductive lines.
2. Description of the Prior Art
During the fabrication of semiconductor devices, multiple film layers are deposited on a substrate. Preferably, the film layer should form a continuous coating of uniform thickness over the entire surface of the substrate. For example, a metal film layer may be used to cover a dielectric layer, wherein the dielectric layer includes holes or trenches extending therethrough. The metal film fills or conformally covers the holes or trenches in the dielectric layer to provide a conductive path through the dielectric layer to the layer or layers beneath the dielectric layer. After the metal film is deposited on the dielectric layer, it may then be masked and etched to form isolated metal interconnects on the substrate that extend above the base of any hole or trench by a height that approximately equals the sum of the thickness of the metal film deposited on the dielectric layer and the depth of the hole or trench.
To ensure that the interconnects formed on the substrate have the desired electrical properties, the thickness of the metal film layer deposited on the substrate must be maintained within a specified tolerance band. If the metal film is too thick or too thin, the height, and thus the electrical resistance, of the interconnects created on the substrate will fall outside of the desired tolerance range. Likewise, if the thickness of the film layer is substantially non-uniform, the electrical resistance of a potion of the interconnects will fall outside of the desired tolerance range. In these cases, the devices ultimately formed with the interconnects that fall outside of the tolerance range will be defective.
One method of method of monitoring the thickness of an electrically conductive film deposited on a semiconductor substrate is to measure the electrical sheet resistance of the film.
The sheet resistance of thin films is commonly measured with one of two different measuring apparatuses. A multi-point probe may be placed into contact with the film layer to measure the resistance of the film layer between the points, or a non-contacting eddy current probe may be placed in proximity with the substrate to measure the sheet resistance of the film layer. Based upon the sheet resistance value obtained for the film layer, in comparison with the tolerance band for the sheet resistance value and the prior sheet resistance values obtained from the same batch of substrates, a determination can be made as to whether any adjustments in the operating parameters of the deposition chamber need to be made.
Examples of a resistance measurement and a sheet resistivity measurement are provided here. Resistance can be measured on a two point structure (not shown).
By choosing a width W which is much larger than the minimal width Wmin for conductors in the layer in question (e.g., W=20*Wmin), Kelvin structure 1000 is relatively insensitive to CD loss. Further, by having a length L much greater than its width W, thereby raising its resistance R along length L, test structure 1000 maintains a relatively measurable voltage difference across probe pads 2204 and 2205, while avoiding excessive heating effects because of the relatively smaller current. Rectangular portion 2201 is provided only for illustrative purpose. In fact, the shape of the portion across which resistance is measured is not essential for achieving the results above. To provide the requisite measurable resistance, an effective length in the direction of current flow which is significantly greater than its effective width suffices. For example, region 2201 could be replaced with a serpentine resistive trace which has a total length greatly exceeding its width, provided that the resistive trace's width significantly exceeds the minimum width Wmin for the conductor layer. A field solver can be used to calculate the effective length-to-width ratio, and hence the relationship between R and Rs, using well-known techniques.
Resistance measurements are common methods to monitor and control the resistivity (sheet resistance) and width in semiconductor processing. However, the inventor has found resistance measurements are generally not sensitive enough to detect small, low level defects, such as void defects.
The semiconductor and electronics industry primarily depended on manual microscopic, and more recently, automated inspection techniques to find and screen defects. These techniques become less effective, however, as geometries continue to shrink into the deep submicron regime, since the size for which defects are critical also shrink. Defects such as interior voids in conductive lines are even more difficult to detect visually. Moreover, some defects, such as stress induced voids in Al lines, may not appear until several process steps after the Al conductors were inspected.
There is a need for an improved process control and device screening method to be sensitive to small variations in measured test values, such as sheet resistance.
The importance of overcoming the various deficiencies noted above is evidenced by the extensive technological development directed to the subject, as documented by the relevant patent and technical literature. The closest and apparently more relevant technical developments in the patent literature can be gleaned by considering U.S. Pat. No. 6,403,389B1 (Chang et al.) shows a method for measuring sheet resistance.
U.S. Pat. No. 5,627,101 (Lin et al.) shows a test method for electro-migration using a Metal and Poly test structure
U.S. Pat. No. 5,987,398 (Halverson et al.) shows a method for SPC for a process having a non-constant mean of a response variable.
U.S. Pat. No. 5,883,437 (Maruyama et al.) discloses a method for applying a time varying voltage between the electrode and wiring pattern at different locations.
U.S. Pat. No. 6,466,038 (Pekin, et al.) shows a method for non-isothermal electro-migration testing of interconnects.
U.S. Pat. No. 5,514,974 (Bouldin) shows a method for testing for metal failures by using 2 different test structures.
U.S. Pat. No. 6,087,189 (Huang) shows test structure to monitor silicide.
U.S. Pat. No. 5,552,718 (Bruce et al.) shows a test structure for space and line measurement.
It is an object of an embodiment of the present invention to provide a process control or screening method.
It is an objective of an embodiment of the invention to provide a test method that is sensitive to low level defects.
An embodiment of the present invention provides a method of testing which is characterized as follows. First, test measurement values from a device are obtained at a plurality of independent variable values. We calculate a goodness of fit value for a fitted curve between: (1) the test measurement values; and (2) the independent variable values. We use the goodness of fit value to monitor the processes used to form the device.
Another aspect of the embodiment includes using control limits on the goodness of fit values.
Another aspect further includes using control limits on the goodness of fit values; the control limits established based on a history of goodness of fit values or on device requirements.
Another aspect further includes the goodness of fit is a correlation coefficient or a standard error value.
Another aspect further includes the fitted curve is a least squares fitted straight line.
Another embodiment of the present invention provides a method of testing which is characterized as follows.
An advantage of the embodiment of the invention is that the goodness of fit measurements values are sensitive to low level defects that may not show up in standard SPC methods. For example, the embodiments are can use resistance measurement to monitor for low level defects (e.g., voids defects) in metal lines where the void defects raise the resistance, but not enough to exceed traditional control limits.
Additional objects and advantages of embodiments the invention will be set forth in the description that follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects listed above are incomplete and do not limit the invention in any way. The objects and advantages of embodiments of the invention may be realized and obtained by means of instrumentalities and combinations particularly pointed out in the append claims.
The features and advantages of a test method according to example embodiments the present invention and further details of a control method in accordance with embodiments of the present invention will be more clearly understood from the following description taken in conjunction with the accompanying drawings in which like reference numerals designate similar or corresponding elements, regions and portions and in which:
The inventor has found that conventional Statistical Process control methods are insensitive to low level defects. For example, resistance measurements are common methods to monitor and control the resistivity (sheet resistance) and width of conducting lines and resistors in semiconductor processing. The inventor has found that resistance measurements can be used to detect defects that increase resistance. The inventor has found that traditional SPC methods using measured resistance measurement values are not sensitive to monitor low level defects (e.g., metal voids). The resistance values are relatively insensitive and also ambiguous, as the fluctuations due to defects are compounded with the fluctuations due to resistance variations that may also arise from compositional variation or dimensional variation. The inventor has found using 3 sigma control limits on resistance measurements were not sensitive enough to detect small, low level defects in metal lines, such as void defects. Resistance excursions outside a 3 sigma control limit have been false signals for metal voiding. These false alarms created delays shipping wafers, as well as causing the unproductive deployment of resources to investigate whether metal voiding was present.
An example embodiment of the invention is a method that uses a goodness of fit value measure arising from a regression or curve fitting technique test/measurement (e.g., correction correlation coefficient, standard error) for a test parameter (e.g., resistance) for monitoring/screening or for process control. The goodness of fit value arises from a regression or curve fitting technique. The minimum number of test values required to calculate a goodness of fit test is obtained.
A curve is fitted to the test parameters values (e.g., dependent variable) and an independent variable (s). A goodness of fit measurement/test (e.g., correlation coefficient) is performed on the curve. The goodness of fit measurement value is used to screen devices (wafers) or for process control. Control limits or scrap limits can be established on the goodness of fit measurement value.
The embodiment's goodness of fit test is thought to be more sensitive than conventional SPC methods. One reason for the embodiment sensitivity is that the embodiment utilizes multiple measurements for curve fitting. In contrast, usual SPC methods use a single measurement. Moreover, the example embodiment for monitoring resistivity tests resistivity on multiple width lines, both larger and at least one that is equal to the minimum usable line width of the particular technology. For example, 0.18 um CMOS technology has a drawn 0.18 um polysilicon and width. If desired, one measurement can be made on a smaller than the usable linewidth to enhance the sensitivity to small defects but at the risk of introducing false signals because the process may not be fully capable of a smaller width.
A. Dependent Variables
The test value (e.g., measured value or result value) is the dependent variable. Other variables are independent variables. For example, the independent variables can be parameters of the test structure (e.g., resistor width) or test conditions (e.g., temperature).
The test values can be obtained using any combination of test structures and test conditions or any other independent variable(s). For example, the test values can be measured on three different test sites that have different test structures.
Also, the test parameters can be obtained on one test site, but the tests are performed under different conditions (e.g., temperature, current, voltage, light intensity, etc.). In addition, different combinations of dependent variables are possible, such as making measurements on two different test site configurations at two different conditions.
As the number of independent variables (N−degrees of freedom) increase, the minimum number to data point is required to obtain the goodness of fit values increases(N+2).
B. Goodness of Fit Tests
The embodiment can use many types of goodness of fit tests, such as correlation coefficients (r or r-sq), standard error of the regression, F test statistics, or other types of statistics that evaluate the difference between the predicted values of the regression to the actual measured values.
C. Curve Fitting
The curve fitting formula or model relates the dependent variable to the independent variable. The embodiments can use any type of curve fitting formula, such as for example, a straight line, curve, nth order polynomial, trigonometric, exponential, or logarithmic equation.
An example embodiment of the invention is a method using goodness of fit value (e.g., correlation coefficient) for resistance (test parameter−dependent variable) on a wafer (e.g., device structure) to screen for defects or for process control. The resistance is me asured on at least 2 different test structures that have different widths. The correlation coefficient is calculated for the least squares straight line fit of Resistance (dependent value) vs Width (independent value).
The test method comprises the following. A device structure, such as a wafer is provided. The wafer has at least a first test structure, a second test structure and a third test structure. The test structures preferably incorporate a resistive portion from which resistance is measured. For example, see resistance test structures in
The resistive portion has an effective length (Lx) and an effective width (Wx). The first, second and third test structures have resistive portions with different effective widths (W1 W2 . . . Wi).
The resistive portion of the first, second and third type test structures have effective lengths (L1, L2, . . . Li). The effective lengths can be the same for all test structures but do not have to be.
Next, the resistance (Ri) of each of the test structures is measured.
As shown in
(1) (y-axis) by the effective length divided the measured resistance (e.g., dependent variable) (L1/R1, L2/R2, . . . Li /Ri) and
(2) (x-axis) the effective widths (W1, W2, . . . Wi ) (independent variable) of the test structures. In this example, a least squares fitted straight line can be calculated.
For this example, where there is one independent variable (W) (we assume the L is not changed�e.g., L1=L2= . . . Li), there is 1 degree of freedom (N). Therefore, we need at least 3 data points (N+2) to calculate a goodness of fit measurement.
Also, if all the test sites have the same effective length (L), the fitted curve can be calculated for:
(1) (y-axis) one divided by resistance (e.g., dependent variable) (1/R1, 1/R2, . . . 1/Ri) and
(2) (x-axis) the effective widths (W1, W2, . . . Wi ) (independent variable) of the test structures. In this example, a least squares fitted straight line can be calculated.
Next, a goodness of fit measurement value (e.g., correlation coefficient (R) or standard error measurement ) is calculated for a fitted curve (e.g., least squares fitted straight line).
The processes used to form the device can be controlled or the devices screened using the goodness of fit measurement (of the L/R vs W ). For example, 95% percentile or 3 sigma limits can be placed on the value of the goodness of fit measurement. If the goodness of fit measurement is outside of the control limits established, the device (or wafer) is flagged or the process is flagged for process control or other corrective action.
The embodiments goodness of fit tests are more sensitive than standard SPC methods because the resistance variation shows up when tested across multiple width test structures (possibly, some type defects test better on different type/width test structures). Also, for the example where the test condition if varied (see
Another advantage of this embodiments' use for process control is the early detection of �latent� defects which do not kill a circuit immediately, but which are reliability hazards (such as a metal line with a notch or void or embedded particle becoming an open circuit during operation because of electromigration due to the higher current density.) Also, because the electrical resistance measurement may be performed after the completion of the device (wafer), it is also sensitive to defects, such as voids due to stress migration, that can develop after the formation of the test structures. Comparison of the goodness of fit values derived from measuring the resistances immediately after formation of the test structures, and after completion of all process steps may also be done to monitor and control defects that may form in later process steps.
A. Sample Size�Various Examples
To calculate a goodness of fit value for data with N degrees of freedom (e.g., N independent variables), we need N+2 data points. For example, for the resistance test above, we had 1 degrees of freedom−the Width of the resistance test structure (independent variable)�and therefore need 3 data points.
There are many different ways to set the sample size for the curve fitting and goodness of fit tests. Examples include sampling by wafer (minimum 3 measurements/wafer), by wafers or devices in a batch (process by a batch tool) (e.g., multiple wafer in a metal sputter tool), by wafers or device thru a tool in a given time period (or sequence) (for example a set of wafers thru a photo tool in a set time period or sequence of runs).
Sampling may also vary according to circumstances. For example, routine monitoring may consist of measuring 3 test structures on x number of wafers per batch. If one of more of the sample wafers indicate an excursion, then a further sampling or even all of the remaining wafers may be measured to confirm the excursion or the extent of the problem and also possibly to screen out defective wafers.
To calculate a goodness of fit value, at least 3 data points are need in this example of a linear regression (with 1 independent variable). The more data points to better the result in the sense of more samples for detection. However, the more data points uses up more using more area on the wafer (for test sites) and increased test time. In a first example, a wafer has at least 3 test structures where resistance is measured. The three test structure have different effective widths. More test structures can be measured and this can improve the accuracy of the goodness of fit test (e.g., correlation coefficient).
In another example, a wafer with a test structure is tested at three different conditions (e.g., 3 different temperatures ).
In another possible example, multiple test sites (all the same layout) on the same wafer are tested under 2 or more conditions. For example, resistance can be measured three times on 3 different test sites (all same width) at 3 different temperatures. For example,
In another example, a wafer(s) with 3 different test structures (e.g., resistance test structure with different effective widths W1, W2, W3) is tested at 2 different temperatures (T1 and T2).
The above examples are non-limiting and combinations of the above examples can be used.
The following non-limiting examples represent preferred forms and best modes contemplated by the inventor for practice of his invention, as well as illustrating the results obtained through its use.
A. Resistance Test�
Below is an example of an embodiment of the invention simulated for a resistance measurement of test structure on a integrated circuit. The simulation is for 30 long lines, divided into 30 individual segments of 1 μm.
The electrical resistance of a line or wire is well known to be:
In the semiconductor industry, a small difference in the width, W, from the designed value may be of significant importance. Hence, critical dimension (CD) measurements by optical techniques or by electron microscopy are routinely performed to control the manufacturing process. CD measurements may also be done electrically in the case of resistors and conductors by making use of the resistor equation as follows:
Because typically dL<<L (or a test structure can be deliberately designed to be so since in modern semiconductor manufacturing dimensional variation is less than a tenth of a micron, and resistor lengths are at least a few microns), L+dL≅L, so equation (5) can be algebraically manipulated to:
Equation (6) is recognizable as a linear equation with the dependent variable (y axis) being 1/R, multiplied by the known value of L, the independent variable (x axis) being W, with slope 1/Rs and y-intercept of dW/Rs.
Thus, electrical monitors consisting of at least 2 resistors or conductors of variable widths, can be made to obtain sheet resistance and CD change. The resistances are measured, and a mathematical best fit by linear regression can be made to obtain the slope and y-intercept values, from which dW and Rs can be calculated.
Mathematically, equation 6 requires the resistance measurement of at least 2 resistors or conductors to solve for the 2 unknown values of Rs and dW. Use of 3 or more resistors or conductors enables calculation of �goodness of fit� values such as the correlation coefficient, and standard error of the regression. This embodiment recognizes and usefully employs the goodness of fit parameters to detect defects. This is because the random presence of defects materially changes the relationship shown in equation 6; i.e., randomly appearing defects introduce additional terms to equation 6 that depend on the number of defects, their sizes and shapes. That is, the presence of defects would cause more scatter in the data so the fitted line would have a lower correlation coefficient and higher standard error.
A simulation of a set of three, 30 um long, 0.5 um thick aluminum alloy resistors with equivalent sheet resistance of 60 milli-ohms/sq., and linewidths of 0.6, 0.5 and 0.4 um, was carried out using Microsoft Excel. A Monte Carlo type simulation was carried out to demonstrate that the correlation coefficient or the standard error (amongst possible other statistical measures) can be a useful parameter to detect the presence of defects. For the simulation, each resistor was divided into a continuous string of thirty 1 um long segments, with each individual segment having a 10% probability of containing a defect of dimensions 0.1 um wide and 0.1 um deep located at the center of an edge of the segment; that is a notch in the shape of a square into the metal.
A segment without a defect has a resistance according to equation 3. A segment with a defect has an increased resistance due to an increased square count that can be approximated by sub-dividing the segment into the two rectangular pieces outside the defect, and the rectangular area that is reduced by the defect. Then the squares corresponding to these 3 pieces are added together.
In this case of a square defect, there is an exact solution for the square count, (See e.g., R. W. Berry et. al., Thin Film Technology, Van Nostrand Reinhold Co., 1968, p 490. ) which is:
B. Simulation Results�Table A
Table A below shows the results of the simulation.
The simulation was of 30 um long lines, divided into 30 individual segments of 1 μm.
The results of 15 random trials are shown in table A above, where �No. Defects� is the total number of defects derived from the 10% probability of each of the 30 segments having a defect, �R2� is the correlation coefficient for a linear regression calculated with the Excel function RSQ, and �Std Error� is the standard error of the regression, calculated with the Excel function STEYX.
The simulation results show that more defects result in a poorer fit as seen by lower values in the correlation coefficient (or its deviation from unity, 1−R2,) and higher values of the standard error For comparison, for zero defects in all 3 of the example linewidths, Excel calculates a correlation coefficient of 1.0 (or 1−R2 of about 1E−15) and standard error of less than 1E−6.
Thus, it is concluded that the presence of defects significantly degrades the �goodness of fit statistics�. In actual practice, it may be necessary to first establish the baseline statistics for a given production line. Then ongoing routine electrical measurements and calculations of the type described in this disclosure can be used to monitor for significant deviations from the normal baseline, thereby giving a signal to scrap or further evaluate potential unreliable or poor quality films or lines or resistors. The calculations are readily done by the existing modern measurement tools already being used which are controlled by computers with capabilities for performing the regression and goodness of fit statistics.
It is also apparent that the sensitivity of the line resistance to defects increase as the linewidth becomes smaller. Thus, this technique is also scalable, and becomes more valuable as the technology shrinks.
This example shows that common �goodness of fit� statistics such as the correlation coefficient and standard error can be usefully employed to monitor the stability of a process. It is also likely that other statistical values or parameters, such as F statistics may also be used in the same manner, but the correlation coefficient and standard error were used as a simple demonstration.
Most generally embodiments of this invention can be applied to any measurable parameter (dependent variable) that can be related by a mathematical equation to one or more independent variables.
Another example is the monitoring of dielectric capacitance such as for gate oxides. Two components may contribute to the measured capacitance, the area or parallel plate capacitance and the perimeter or fringe capacitance if the measured capacitor is made sufficiently distant from another capacitor so that coupling capacitance is not significant. The capacitance can then be represented by:
Further, the fringe capacitance can be represented by a unit length capacitance multiplied by the perimeter (P):
By using 3 or more capacitors of the same area, but different perimeter lengths (for example any 3 or more capacitors of area 100 sq. um, consisting of length and width of 1�100, 2�50, 4�25, 5�20, or 10�10 um), the measured capacitance can be curve fitted to the perimeter. Then again, goodness of fit values can be used to evaluate whether there is an issue or problem with the capacitors.
Embodiments of the invention are automated, scalable testing technique for detecting very small defects or low level fluctuations. The technique can also be applied immediately after the conductor or resistor is fabricated, or after completion of all process steps so that defects such as stress induced metal voids that are generated in later processing, can also be detected. The technique, however, is not restricted to metal lines, but can be applied to doped Si , doped polysilicon, polycides, and salicides; that is, to any film whose resistance can be measured.
The invention can be implemented using any type of test and test structure. For example, tests could include capacitance test. Test structures can be used that have structures formed adjacent to said resistive portion to measure the effects of micro loading or chemical-mechanical polishing. See U.S. Pat. No. 6,403,389 (Chang, et al.). Also, for example the test structures described in U.S. Pat. No. 6,403,389 (Chang, et al.) could be used.
In the above description numerous specific details are set forth such as widths, lengths, thicknesses, etc., in order to provide a more thorough understanding of the present invention. It will be obvious, however, to one skilled in the art that the present invention may be practiced without these details. In other instances, well known processes have not been described in detail in order to not unnecessarily obscure the present invention.
Unless explicitly stated otherwise, each numerical value and range should be interpreted as being approximate as if the word about or approximately preceded the value of the value or range.
While the invention has been particularly shown and described with reference to the preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the invention. It is intended to cover various modifications and similar arrangements and procedures, and the scope of the appended claims therefore should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements and procedures.
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Queens Library honors latest GED recipients at Long Island City branch
Marilyn Ferrer of Far Rockaway and new graduate who is also expecting a child soon, smiles during the ceremony as names are called to receive diplomas. The graduation was held at the Long Island City library branch.
During student Raymond Rolle's speech, graduates hold up their diplomas. He received his GED after studying at the Long Island City branch. "We're just getting started, hold them up and tell them, you earned it. We're just getting started," he said.
Oscar Ruiz-Santos shows off his cap and new diploma. He does not know where he wants to go to college but is considering studying computer science or information technology.
Jasmin Hu tears up as she talks about her time at the Queens Library. In 2010, she escaped with her daughter from China and sought asylum in the United States.
'Tis the season at Atlas Park in Glendale
Santa and his elves kicked off the holiday season last Saturday at the Shops at Atlas Park i…
More than 2,000 people attended the Queens Center Tree Lighting Ceremony at the mall in Elmh…
GingerBread Lane village opens at museum; lights on in Flushing
It's never too early to get in the Christmas spirit and making it easier are the holiday str…
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Borewells, ponds, and plants expected to maintain ecological balance
Touted as the first of its kind in Tamil Nadu, the tropical butterfly conservatory in Srirangam is taking shape with phase-I of the project proceeding in full swing.
Planned on 25 acres at the Upper Anicut reserve forest situated between the Cauvery and the Coleroon, the conservatory will encompass outdoor and indoor conservatories, breeding laboratory, shade net house, interpretation facilities, host plant farm, and facilities for visitors.
At present, the outdoor conservatory works, including construction of a huge boundary wall around the facility and ramps at the entrance, are being carried out with the Rs. 1.5 crore fund allocated by the State government.
Construction of the 1-km-long compound wall is nearing completion, say officials of the Forest Department, which is building the park.
Six borewells had been sunk for watering the host / nectar plants planted inside the conservatory. The aim is to foster conservation of butterfly species and educate public about the role played by these plants in maintaining the ecological balance .
A pond has been created inside to enhance the beauty of the conservatory, and make it appear a natural habitat. Creation of lawns and floral patches are the other works currently underway . Seedlings of various tree species have been kept ready for planting to enhance the green cover.
Major works planned in the second phase include indoor conservatory, 'nakshatra vanam', and walkways. Tender for the indoor conservatory works is expected to be floated next month, say officials.
A committee that included experts from the Tamil Nadu Agricultural University and Coimbatore-based Institute of Forest Genetics and Tree Breeding designed the conservator.
The indoor butterfly conservatory will simulate natural butterfly habitats with its roofs and sides covered by polycarbonate sheets. The controlled temperature is expected to ensure suitable microclimate within the indoor conservatory inside which suitable nectar and roosting plants would be planted.
The 'nakshatra vanam' will feature 27 number of trees/ plants species corresponding to 27 stars of the Hindu almanac and 12 trees / plants species corresponding to 12 zodiac signs.
Being set up at a cost of Rs. 8.6 crore, the conservatory is expected to be ready by the end of the current fiscal, say officials.
The conservatory would have about 50 butterfly species, including plain tiger, crimson tip, lemon pansy, striped tiger, and common jezebel.
Keywords: Srirangam Butterfly Conservatory, Nakshatra Vanam, Forest Department, Upper Anicut reserve forest, habitat conservation


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Find commute times to your work, school, gym and more.
Brighton Park Apartment Homes
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Prices, specials, features and availability subject to change.
Property Features
- Security
- Alarm
- Parking
- Covered Parking
- Garage
- Convenience
- Business Center
- Extra Storage
- High Speed Internet Access
- Leisure
- Clubhouse
- Fitness Center
- Playground
- Swimming Pool
- Tennis Court(s)
- Laundry
- Laundry Facility
- Washer & Dryer Connections
- Other
- 2 controlled entr gates - Watson Blvd
- Club room available by reservation
- Clubhouse movie theater available by reservation
- Community grills on site
- Covered car wash center
- Crown molding and color accented walls
- Fenced perimeter
- High-speed Internet access
- Large garden tubs and marble top vanities
- Lighted tennis
- Low density site plan w/lots of trees
- Lrg fitness center w/indiv equipment
- Mgmt interested in your comfort
- Nine foot ceilings
- Private 12x20 garages available
- Relaxing sauna
- Six panel interior doors
- Spacious walk-in closets
- Sparkling pool w/large sundeck
- Sun rooms avail with built in computer desk
Units may feature
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- Disability Access
- Oversized Closets
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Property Details
Enjoy peaceful and quiet living at Brighton Park. Our spacious grounds are filled with trees and attractive landscaping. The floorplans offer plenty of space - we are the best value in the Warner Robins area. Your new home is nestled in a cozy location that has two gated entrances, quick access to I-75, and is just down the road from the city's nicest shopping and dining. Enjoy a workout at your convenience in our 24-hour fitness center. You may want to get in a game of tennis on our lighted court. When it's time to relax, enjoy a stay in the sauna, or just sit by the pool and fall asleep listening to the waterfall. Our pool stays open year round. Enjoy a cookout with neighbors at one of the five picnic areas equipped with grills. Don't forget to tell our leasing team you saw our ad on ApartmentGuide!
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Northern Michigan Wheelchair Accessible Lodge Rentals(14)
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labor day weekend
My family and friends decided to visit Alpena MI for the first time. Our vacation stay in the friendship lodge was way beyond our expectations!! From the moment of our arrival to the moment we drove away, our time spent here was by far one of the best times we've had. The lodge offered absolutely everything you need. It was very clean and all rooms were well equipped. There is no complaint other than we wish we stayed longer and found this lodge sooner!! Definitely a cozy, fun, relaxing place to stay at any time of the year! We are returning each year from now on! Thank you for your kind hospitality!!
Great location, good amenities, on its way up
We stayed in the Lakeview Suite for three nights. We had two adults, a five year old and a baby. Some of the decor has been updated from the pictures shown. Location: Excellent. 1 block to beautiful beach, go the other way for shopping and restaurants. Can even walk to grocery store (>1mile) if needed. Tiny view of lake Betsy though the windows, best view is from the toilet - not kidding. Space: good space for two adults plus pack-n-play (provided by Serendipity house) in the bedroom, especially if you block off the internal entry door and just use the external door as we did. May not be so pleasant in the winter. Living space had a sleeper sofa, but it takes up all available room so we used a small inflatable bed (we brought our own) for our 5yo and then propped it in the corner so we had living space during the day. Bathroom is ample, though shower is small. Amenities: Kitchenette had all appliance, pots, pans, etc. Including dish soap. Need to bring your own salt pepper and other condiments. Bathroom had plenty of towels though some were slightly stained (not gross - just showing wear). No shampoo or shower soaps provided. Enough space and hooks for storage of clothing, gear, and food supplies. Clothesline in back for drying suits was very helpful. We didn't use the picnic table, backyard chairs, or fire pit, but they were all there. "Grill" is a tiny webber charcoal camp grill. Will do the trick if you're desperate, but too fussy for our needs. Peaceful backyard setting with just other home noise, not business noise. Nice front porch to people watch or read. Beach chairs provided in the bedroom. Owner appeared to be working in grounds and doing other maintenance while we were there - I took that as a good sign. Good service interactions. Cleanliness: Average. This is the one that will keep me from letting my mom stay here. Carpets were worn and had stains and there were stains on the couch. We found earrings in the floor when we arrived which made me question the vacuum job. Linens were clean, but bedcover did not appear to be made of a washable material. Perhaps they switch them out and get them laundered - otherwise... Dust on pictures and flat surfaces, sand in drawers. Looks like they weren't wiped out between guests. Kitchen was clean as was the bathroom. Honestly, I think it just might be too much for one housekeeper to handle during peak season. Nothing gross - just not as nice as it could have been. We had a great time.
Fantastically relaxing!! Highly recommend!!
We stayed at the lodge during the week of the 4th of July! We had 18 people ranging in age from 10 months to 70 years old and we all had a wonderful time! The lodge has all the amenities of home and more! Pack your clothes, some food and your roasting sticks for the fire pit and you are all set! We enjoyed the huge wrap around porch that overlooks the river. It is especially peaceful in the morning while enjoying your coffee or while reading a nice book! We grilled hamburgers on the provided gas grill and were all able to eat together at the large table. The on site staff was very helpful in suggesting fishing spots and canoe liveries! While there we canoed the beautiful river. We were picked up at the lodge and were able to canoe straight back to the boating dock across the street! Very convenient! We also visited a little zoo down the road where we could feed the animals. Fun for all ages! The water was freezing, but that didn't stop the more daring teenagers from putting on their suits and going for a dip in the river or wading out to do some fishing. Ending the day around the campfire or sitting on the deck watching the sun fade away... Couldn't ask for a more relaxing getaway with all the comforts of home! We will definitely be making a return trip in the near future!


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I just bottled some cherry wheat last night and i noticed down at the end of the last bottle some cherry sediment went into the bottle, thats not my problem, i read that you brew the beer in a primary then rack it on top of the cherries in a secondary. or would it be better to add the cherries to the primary then rack to a secondary for clarity sake. just a thought. what would produce better taste?
I'm trying to drink away the part of the day that I cannot sleep away
Rogue Crow Brewery
Primary 1 (chino)- carmel vanilla cream ale
Primary 2 (adam)- nothing
primary 3 (billy)- nothing
Secondary 1 (perry)- nothing
Secondary 2 (waymon)- nothing
Bottled- Freetail Ale 1.crow, prematura premavera (saison), Monticello House Ale
On Deck- blonde ale (fruit experiment)
Ferment in the primary, rack onto cherries in the secondary, then you can rack to a tertiary for a few days just to make sure you don't get fruit bits in the bottles
Same here - primary, secondary, tertiary - a recipe with step by step instructions is under my name.


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Best cheese plate in LA
- d
- DB Mar 9, 2006 07:52 PM
Reading the "dessert island" posts below made me realize that more than any of those desserts listed, I'd rather have a really great cheese plate. So where would you point me?
The best one I've had in L.A. was at the Old Patina on Melrose about five years ago.
A.O.C. has good cheese, but miniscule portions at exhorbitant prices - $24 for 5 bites is obscene.
Spago and Melisse had decent cheese, but it's been a few years for me.
Best option, IMO, is to go bite the bullet, go to the cheese store of bh and drop $100 on 5-6 cheeses and invite 8 people over...
Get some bread at the breadbar too
re: Coachboy
I believe that the Cheese Store will actually prepare a platter for you, adding in such details a gherkins and fruit.
re: Jess
I totally agree with the suggestions of Beverly Hills Cheese Shop and The Cheese Shop of Silverlake. But another good choice is Auntie Em's Kitchen--they have a wonderful little store with carryout food and foodie items--plus a great selection of cheeses (Cowgirl Creamery, etc.)
As for restaurants, I'd have to say Melisse. And if you want something more casual, the little French place at the Farmers Market on Fairfax. (not the Grove, but the old section) Great people watching.
re: Elaine
I think the BH Cheese Store is the way to go. And it won't cost you $100 for 5 cheeses, assuming you buy just enough cheese for you to consume that day, when the cheese is at its best.
I have to disagree with the recommendation of Monsieur Marcel in the old Farmers' Market at 3rd and Fairfax. Their cheese plates are cut in advance, put on plates, covered in saran wrap, and then put in a too-cold fridge. The result is that every cheese on the plate tastes like the blue cheese that is also on that plate. It's not surprising that they do this because their cheese storage in the main store is pretty atrocious. They've got blues mixed in with all the other cheeses, which is a dicey proposition.
If money is not an issue, then it's PATINA, PATINA, PATINA and of course PATINA. :-)
If you are on a budget, might I suggest BISTRO 561 in Pasadena?
toss up between melisse and patina - though last time i was at patina - 2 months ago - did not wow me like it has in the past - i think it's the mentality, i wanted to be "one-upped" every time i go there.
re: Marco Polo
The new/downtown Patina still IMO is the best cheese course in town. The selection is fantastic, the frommager very nice and knowledgeable, and the price is up there but worth the portions. He also has a nice complement of honey, nuts, quince.
I think cheese is a bit less at Spago, Melisse, and AOC; but not the experience as far as quality/quantity/service. Try the epoisses.
i did the cheese plate after a tasting menu at sona in November and it was very good.
If you are further east and so inclined, order a cheese plate from the silverlake cheese store at sunset and santa monica. ask the owner to throw something together for you giving him salient details, such as the wine and the culinary sophistication of the people who will be eating it. He is a wizard...the wizard of cheese!!!!
re: hellolizzie
Agree with you about Sona's cheese service! Had it after a tasting menu, as well. It was memorable. But the meal, in toto, was big $$$.
Too bad there aren't wine-and-cheese bars around that just serve the cheese course with that same level of knowledge and selection. I would go all the time!
re: JudiAU
Please don't forget our other friends, the goat and sheep. Recently attended a class at the Beverly Hills Cheese Shop where 8 out of 10 of the samples were goat cheese. The St. Loup - St. Maure in particular blew me away.
re: JudiAU
I also really enjoyed the cheese service at Melisse (see link, bit about cheese is about halfway down). They served me unusual cheeses that I never would have tried otherwise, and you can have wine paired with your cheese. I know that at some places you can sit at the bar and just do cheese and wine--you may want to inquire about doing that at Melisse, since an entire dinner there will put a serious hole in your wallet (not that it would be a waste of money!).
For cheese to go, I like the Artisan Cheese Gallery in Studio City, which I found out about from Evan Kleiman's podcast and KCRW show, Good Food.
There's something about cheese from a cheese store or restaurant cheese service. It just tastes better than even the best stuff from Whole Foods. I can't pinpoint why.
The all-American cheese cart at Normans on Sunset is sensational. Also, in Santa Monica try Ocean & Vine. The chef is a cheese freak, makes a killer fondue, and gets great cheeses from Wisconsin that few have ever tried. Last time I was there we had 3 cheese courses, incl. the fondue!
re: Adsvino
I agree the cheese service at Norman's is great. Had it for the first time last night. The staff was well informed and a whole lot of fun.
I dunno, I so rarely ever let someone put together a cheese plate for me, when it's so fun to choose a wine or two, go to Cheese Store of Silverlake or the Artisan Cheese Gallery and put one together myself.
It's not like France where someone rolls up one of those sterling silver Christofle cheese carts. But I like the cheese and fruit plate at Magnolia in Pasadena for about $10-$11.
Julienne in San Marino has nice cheese plates they can prepare for you not to mention all the other tasty items they have.
AOC always has an excellent cheese plate. Alot of french stinkers! If you want your cheese to-go Auntie Em's has a great selections of artisanal cheeses, and a really knowledgeable staff to help you pick.
If had to a pick a best cheese plate in LA, I would hit PATINA downtown.
For best value in town, BLD on Beverly Blvd. has a great cheese plate. You pick as many selections as you want at $6 per cheese. Regardless if you get one or six cheeses, along with them you get house-roasted almonds, fig cake, quince paste, pannini-pressed white country bread, and slices of (La Brea?) fruit nut bread. I was there yesterday and had the Pierre Robert triple cream and Humboldt Fog goat cheese. Delish!
I had a cheese plate recently at Ford's Filling Station and also at Upstairs II. Haven't been to Cube but have heard good things.
I agree with those telling you to do it yourself. I contacted Melody at Artisan, and she let me taste till my heart was overflowing. Together, we put together an 8 (!) cheese cheese plate for New Year's. My favorites were the triple creme, the stitlon, the tazmanian roaring 40's, and the italian birria rosso (beer washed). Heck, I loved them all.
It was devine. I got some charcuterie, picked up foie gras pate at gelsons, got some nairn's and a baguette, popped open a good prosecco and sat my husband down for a wonderful romantic cheese dinner. We had with that a small salad and home made gigner frozen yogurt for dessert.
He told me later, "to get this meal at any fancy place would cost in the three digits. It didn't cost near that. The cheese plate itself cost under $30, if not around $20.
So go to Artisan..heck, do what I did and call Melody ahead of time.
Gotta put in another vote for Patina at the Disney Hall. The maitre fromager, Andrew Steiner, is a GEM -- wonderfully informative and incredibly imaginative in his rotating selection of cheeses.
Tip: Go late just for dessert (cheese of course!). Andrew can't bring the cart to your table for oogling during the main dinner hours. The restaurant is too crowded. But we always go after a show at the Music Center/Disney Hall and he spends a good 15 minutes giving us a tour of day's cheeses on his cart. At $20 for the plate, it's really a bargain!


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You do not come across success just by hoping for it. To achieve true success, you need the strength of mind and body to struggle and work hard to reach your fullest potential. You need the right attitude, self-discipline and the ability to put your goal before your own needs, if you are really driven towards reaching success. There is, after all no substitute for hard work, and as Henry Ford says, "The harder you work, the luckier you get" – the more successful you get!
How do you overcome success?
Intense hard work along with great skills shall help you win one success after another. There shall be innumerable obstacles strewn in your path towards success, however, what makes a man truly worthy of the success that he attains is the ability to keep struggling until he can reach his goal. Giving up after a few failed attempts makes you a loser.
A truly successful man will keep trying and keep struggling until he perfects his art. Thomas Edison failed approximately 10,000 times while he was working on the light bulb and yet he never dreamed of giving up – this is the hard work and the determination that marks a true success. Indeed, success is not measured by the position that you are in, today but the amount of hard work you put in and the number of obstacles that you overcome to reach your goal.
Why work hard, if there are shortcuts?
The good thing about working hard is, that for people who are driven towards their goal can enjoy their hard work and consequently, the work does not seem unduly grueling to them. When you begin to work hard towards achieving success, make sure to work smartly too. An intelligent working technique, along with relentless effort will go a long way in helping you achieve the success that you always desired.
Nothing in this world comes easily, least of all, success. Take the example of Abraham Lincoln who worked hard, without ever getting disappointed of his countless failures, from the age of 21 till the age of 52, when he went on to become the President of the US. Again, it took Noah Webster 36 years to compile his Webster's Dictionary. Where would we be today if he had not put in those countless hours of hard work behind his grand contribution to the English language?
Therefore, you need to remember that there are no short cuts to success. Hard work, complimented with an intense desire to struggle and to achieve success is the only sure shot way of reaching success that you have always wanted.
If you like what you've read visit our website at http://www.Lifeitup.net. Life It Up is all about helping you achieve success and happiness in life.
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Kelly is back from MacTech Conference 2014 and John has a broken iPad screen. The two join Jeff Gamet to talk about MacTech Conference and the trend towards smaller events in the conference world, plus John shares how he dealt with a cracked iPad screen without breaking the bank.
| Read more »


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Seibertron.com - The Ultimate Transformers Fansite
dedcat wrote:Devastator isn't allowed to have any more of my money!
Va'al wrote:I keep track of everyone. Backwards.
There are atandarfs to maintain.
craggy wrote:When Hero Mashers are the nicest looking toys in a news post, you know something's wrong.
LOST Cybertronian wrote:Hey, If Mindmaster survived then you should do just fine.
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The deed is done! Our summer fundraiser is over and, thanks to the fabulous contributions our patrons and donors, we are moving forward!
The Class 6 Theatre 2014/2015 Season:
Sylvia, by A.R. Gurney - February 4 - 22
How I Learned to Drive, by Paula Vogel - February 4 - 22
Twelfth Night, by William Shakespeare - May 13 - 24
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Want to see them all, save a little $, and help us out at the same time...?
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you can visit our secure Paypal link (via "make a donation" at the top of this very page!)
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- About ATNI
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Submitted by jparker2312 on Tue, 11/27/2012 - 11:46
WHAT: 2013 ATNI Winter Convention
WHEN: January 28-31, 2013
HOST: Chehalis Tribe
Make your room reservations and secure your early bird rate now!
Register Online Now! Early Bird Rate $170.00 ends on January 18, 2013
On-Site Rate $200.00
WHERE: Great Wolf Lodge
20500 Old Hwy 99 SW
Centralia, WA 98531
November is officially designated as Native American Heritage Month, in which we celebrate our rich heritage and historical achievements including modern day successes in higher education and building stronger economies.
Generous sponsorships from Avista, Central Washington University, the Colville Tribes and WSU Spokane are helping us spread awareness of our important place in the history of our country, and our continuing contributions.
Join us as we celebrate Native American heritage and achievement all November. Because it's not just a celebration of our past; it's a celebration of our future.
ATNI 2013 Winter Convention Coming Soon!
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NORMAN — The one downer on a day Oklahoma sent its seniors out on a high note was senior defensive tackle Adrian Taylor suffered a season-ending torn Achilles late in the first half.
OU's Adrian Taylor done for season with torn Achilles
Sidelined by a gruesome broken left ankle in the Sun Bowl, Taylor spent the entire off-season rehabilitating the injury to play his senior year. The Achilles injury was on his right foot.
"It crushes you with what he's invested in this program with everything he's gone through,†said defensive coordinator Brent Venables. "He's given us a lot more than we've given him. His legacy will be incredibly strong here...
"He has an incredible spirit and strength. I told him we need him to continue to give that to us. We need that from him. He's not done. He won't take anymore snaps but mentally we need him right there with us.â€
One of Taylor's roommates is defensive end Jeremy Beal, selected the co-winner along with Taylor for the Don Key award.
"He was playing his heart out,†Beal said. "It was hard to see him get hurt, especially on Senior Day. I feel for him. You can tell he's a little bit down but he was excited for the other seniors how we won. But his football career may be over.â€
Coaches moved Pryce Macon to defensive tackle a couple of weeks ago. The only other defensive tackles are sophomores Stacy McGee and Jamarkus McFarland. The Sooners this week should get back Casey Walker, sidelined the past seven weeks by a sprained knee.
"That's an area we already were a little bit thin,†Venables said. "Getting another body that's actually played there and was a starter will help us.â€
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Create true color (24 or 32 bits) image list for trees, lists, and toolbars.
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CShellList - A Good ImageList Class
Shows how to use the Shell API function, SHGetFileInfo, to retrieve icons.
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MFC Integration with the Windows Transactional File System (TxF)
The Transactional File System (TxF), which allows access to an NTFS file system to be conducted in a transacted manner through extensions to the Windows SDK API. MFC 10, has been extended to support TxF and related technologies. This support allows existing MFC applications to be easily extended to support kernel transactions.
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Explore the differences that webforms programmers moving to MVC might encounter in user controls.
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Discover two ways that you can use Visual Basic to save colors.
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Arun Karthick introduces you to the state machine model and shows you how to create a simple working state machine sample using the .NET framework in the C# language.


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Find records of Catherine Alldridge
Find birth, death, marriage, military, and other records of Catherine E Alldridge at Ancestry.com.Search for records
Biography & Family History Add details
Catherine E Alldridge (1923 - 1999) was born on July 18, 1923. She was born into the Alldridge family.
Catherine had no-known marriages. Catherine died on March 13, 1999 at 75 years of age.
Catherine E Alldridge's last known residence is at Warminster, Bucks County, Pennsylvania.
We find a death record for Catherine E Alldridge in the United States Social Security Master Death Index (SSDI). The death certificate for this record has been observed. This data can be considered accurate. What is the SSDI?
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ben604 (29th November 2013)
I'm off to NZ at the end of December and need to transport my ridiculously big Clevo P170em Laptop in the cabin. Anyone got a particularly snazzy laptop case/backpack that would handle such a large laptop that they could recommend?
I love that laptop, it's a beast @ben604. Try the Targus XL 17 TCB001EU Should be around £35 + vat It even comes with its own rain coat!
Last edited by VeryPC_Colin_M; 29th November 2013 at 12:57 PM.
ben604 (29th November 2013)
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Who's More Stressed on Valentine's Day — Singles or Couples?
For a holiday all about the heart, Valentine's Day sure wreaks a lot of havoc on it.
For a holiday all about the heart, Valentine's Day sure wreaks a lot of havoc on it.
Confession time: During my first few weeks living in Louisiana last summer, I thought a co-worker had misspelled the word "crew" when I saw it written as "krewe." She still (rightfully) teases me about it to this day. I was a stranger in a strange land, a Yankee from New Jersey living in the south.
This weekend, I guess you could say I officially become a Southerner by riding on a float during my first Louisiana Mardi Gras.
Spring will arrive early this year, according to America's most famous groundhog, Punxsutawney Phil.
The hourly countdown to 2013 has officially begun, which means New Year's Eve preparations are in full swing. We're practicing our photobombing techniques, cranking up the tunes and bejeweling jean shorts, among other things. December 31st is the party of all parties, after all!
On Christmas morning, there's nothing worse than getting a bad reaction to one of your presents. This is especially prevalent among the younger crowd, particularly those under age 12. Why? Well, the kiddos don't necessarily have an understanding of faking appreciation and re-gifting later, so it just comes off as bratty behavior.
I love drive around town with my grandkids and gaze at Christmas lights. They love to squeal from the backseat, "Look Woo Woo, look at that one!" Personally, I prefer those lights that blink in unison with Christmas music playing on the front porch. Now that takes skill and probably some sort of engineering degree. Probably an electrician's license, too.
The latest decorating craze seems to be blow-up decorations. They blew in like a storm, everyone wanted inflatable Christmas paraphernalia in their yard. But I think they're going out of style just as quickly as they became in vogue.
It's that time of year when something magic happens. We call it the Christmas Spirit, and it touches young and old in different ways. Houses start to sparkle and shine, draped in garlands of lights and decorations galore.
I make it a game and try to guess what kind of family lives in those beautifully decorated houses.
Every morning this week Robert J Wright and Erin McCarty will have your chance to win tickets to see Trans Siberian Orchestra at the CenturyLink Center on December 19th! Earlier today it was 5th row seats. It's 4th tomorrow morning, counting down to front row on Friday!
KVKI is celebrating Christmas all month long with our very own Advent Calendar. Each and every day from now through Christmas Day we'll add new content to the calendar. All you need to do to see it is click on the corresponding day of the week. And don't worry if you miss a day; you can check back and see what you missed all month long!
My Grandfather is in his mid-90s and we have a tradition for him at Christmas. Every year, my sister makes him S'mores. Not just any S'mores...these are Golden Graham S'mores.
What house hasn't had the aroma of Tollhouse Chocolate Chip Cookies wafting through the house. For some reason those cookies make everything smell like the holidays. Granted, I will eat them when it isn't Christmas, but I will chow down on them, when it is
The holidays are a great time to combine various foods, in this case, chocolate and rum.