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A bipolar transistor susceptible to high level integration has its active regions formed in slots within a semiconductor substrate. In one embodiment, the emitter is formed within a slot and has a surrounding region doped to function as a base. A collector is formed in another slot which is located adjacent but spaced apart from the emitter slot. Carrier transport occurs principally horizontally between the emitter and base and then to the collector. Additional slots may be used to isolate the slot transistor in conjunction with a horizontally disposed pn junction and a buried collector. The collector may be formed in a slot which contains an oxidized outer sidewall that serves to isolate the individual transistor.
1. An integrated circuit structure comprising a bipolar transistor formed in slots in a semiconductor substrate, said structure comprising:
(a) a substrate comprising a buried collector layer doped to form a layer comprising a first conductivity type, an epitaxially grown layer over said buried layer, a first insulation layer on said epitaxial layer, a doped polycrystalline semiconductor layer on said insulation layer, and a second insulation layer over said polycrystalline semiconductor layer;
(b) a first slot formed in said substrate extending down through said second insulation layer, said doped polycrystalline semiconductor layer, said first insulation layer, and a portion of said epitaxial layer,
(c) insulation material formed on the upper portion of the sidewall of said slot comprising the exposed sidewall of said polycrystalline layer and an upper portion of the sidewall of said slot comprising the exposed epitaxial layer to electrically isolate said slot from said doped polycrystalline semiconductor layer and from a base contact region to be formed in said upper portion of said epitaxial layer;
(d) an active base region formed in said epitaxial layer of said substrate adjacent to and surrounding the bottom and sidewalls of said first slot below said portion of said slot sidewall within said epitaxial layer having insulation material thereon, said active base region being formed in said epitaxial layer by diffusing a dopant through the exposed lower portion of the sidewall of said first slot below said portion of said sidewall having insulation formed thereon to form an active base region of opposite conductivity type to said buried collector layer;
(e) a base contact region formed in said upper portion of said epitaxial layer adjacent said insulation material on said slot sidewall within said epitaxial layer, but electrically separated from said slot by said insulation material, said base contact region in said epitaxial layer being formed over said said active base region and in electrical contact with both said said doped polycrystalline semiconductor layer and said active base region whereby said polycrystalline region forms a contact for said active base region through said base contact region;
(f) an emitter formed in said first slot in said substrate comprising a semiconductor material of opposite conductivity to said active base region in said epitaxial layer;
(g) a collector contact slot formed in said substrate spaced from said first slot and extending down through said second insulation layer, said doped polycrystalline semiconductor layer, said first insulation layer, and said epitaxial layer, into said buried collector layer;
(h) insulation material formed on the upper portion of the sidewall of said collector contact slot comprising the exposed sidewall of said polycrystalline layer and an upper portion of the sidewall of said collector contact slot comprising the exposed epitaxial layer of approximately the same depth as said base contact region formed in said epitaxial layer to thereby electrically isolate said collector contact slot from said doped polycrystalline semiconductor layer and said base contact region formed in said upper portion of said epitaxial layer; and
(i) doped semiconductive material within said collector contact slot comprising an active collector region and a collector contact region to provide electrical contact to said buried collector at the bottom of said collector contact slot.
2. The integrated circuit structure of claim 1 wherein said epitaxial layer comprises a silicon layer.
3. The integrated circuit structure of claim 2 wherein said polycrystalline layer comprises a polysilicon layer.
4. The integrated circuit structure of claim 3 wherein said insulation on at least the upper portion of said first slot and said collector contact slot comprises silicon oxide formed by oxidizing exposed portions of said polysilicon layer and said epitaxial silicon layer after the respective slots are partially formed.
5. The integrated circuit structure of claim 4 wherein said active base region is formed by doping said semiconductor substrate with a dopant diffused through the surface of said first slot not covered with said silicon oxide into said substrate from a doped filler in said first slot.
6. The integrated circuit structure of claim 5 wherein said doped filler material comprises a material having a first dopant therein capable of diffusing into said substrate to form said active base region and a second dopant of opposite conductivity type to form said emitter in said first slot.
7. The integrated circuit structure of claim 6 wherein said insulation layer over said epitaxial silicon layer of said substrate is formed with an opening conforming to the width of said first slot plus an additional distance on each side of said first slot to permit contact between said epitaxial silicon layer and said subsequently formed doped polysilicon layer adjacent said first slot to permit establishment of a conductive path comprising a base contact region through said epitaxial silicon from said active base region in said epitaxial silicon adjacent the lower portion of said first slot to said doped polysilicon base contact layer.
8. The integrated circuit structure of claim 7 wherein said base contact region extending from said active base region to said doped polysilicon base contact layer is formed by diffusing dopants from said polysilicon layer into said epitaxial layer whereby said base contact region is self-aligned with said active emitter region and said active base region.
9. The integrated circuit structure of claim 5 wherein said base region in said substrate surrounding said emitter in said first slot and self-aligned with said emitter comprises a doped region in said substrate formed by doping said substrate using a filler material in said emitter slot having multiple dopants with differential rates of diffusion wherein a first dopant with a faster diffusion rate will diffuse through the walls of said slot into said adjacent substrate to form said base region and another dopant having a slower diffusion rate will form the emitter material in said slot.
10. The integrated circuit structure of claim 9 wherein one or more isolation slots are formed in said substrate in self-alignment with said transistor to isolate it from adjacent devices in said substrate.
11. The integrated circuit structure of claim 10 wherein said collector contact region formed in said collector contact slot is contiguous with said one or more isolation slots surrounding said transistor.
This application is a continuation-in-part of Bower U.S. patent application Ser. No. 576,659, filed Feb. 3, 1984, now abandoned.
1. Field of the Invention
This invention relates to a bipolar transistor formed in a slot. More particularly, this invention relates to formation of a bipolar transistor having its active regions formed in slots in an integrated circuit substrate.
2. Discussion of the Related Art
The density of integrated circuits continues to increase. Advances in lithography have permitted line width resolution to reach micron dimensions and processing techniques have improved to the point where the reliable formation of thin films and precise etching are both possible so that smaller and more predictable feature sizes can be obtained. As a consequence, the lateral dimensions of devices are reaching micron levels and passing on into nanometer ranges resulting in a continued decrease in the density of integrated circuits.
Thus, a greater number of individual devices can be fabricated in a given area. While further increases in areal density are likely, physical, equipment, and process limits are being approached. In addition, as devices become smaller and smaller, their power ratings are reduced and the relative importance of problems such as parasitic capacitance and contamination is increased. Due to the diminishing return to be obtained from further efforts to improve areal density, it has become desirable to consider the possibility of increasing the extent of the active regions in the vertical dimension to thereby obtain performance for a device with established lateral dimensions which is equivalent to the performance of a device with greater lateral dimensions. Also higher power or higher performance devices may be obtained in this way.
Bipolar transistors typically have a vertical structure as shown, for example in Horng et al U.S. Pat. No. 4,392,149 which relates to a method for formation of a bipolar transistor having an oxide spacer between the emitter and the external base region which permits very close spacing therebetween. A buried collector layer is provided which is connected to a collector contact by a well or reach through.
Ohuchi et al U.S. Pat. No. 4,302,763 describes a semiconductor device which includes a semiconductor substrate with a first region of first conductivity type in the substrate which apparently comprises the collector. A second region of a second conductivity type is also formed in the substrate adjacent to the first region and presumably forms the base of the transistor. A third region of the first conductivity type, which apparently includes the emitter, is formed adjacent to the second region and includes at least a portion on the substrate which is comprised of the same element as the substrate and oxygen. The band gap energy of this portion is said to be larger than that of the second region. A SIPOS layer is used to form the emitter by diffusion of the impurities of the SIPOS layer into the underlying base region.
As the densities of integrated circuits have increased, there has been serious consideration of using trench or slot formation processes for forming the insulating zones between individual transistors. See, e.g., D. N. K. Wang et al, "Reactive-Ion Etching Eases Restrictions on Materials and Feature Sizes", Electronics, Nov. 3, 1983, pp. 157, 159 (157-159?). In theory, slot isolation would allow individual devices to be packed closer together. Such an isolation technique is described in Bondur et al U.S. Pat. No. 4,104,086 as well as in Bonn U.S. Pat. Ser. No. 719,085 and Gwozdz U.S. patent application Ser. No. 759,621, both of which applications are assigned to the assignee of this application. Bower U.S. Pat. No. 4,533,430 describes and claims a process for forming such slots having near vertical sidewalls at their upper extremities to avoid formation of voids when refilling the slot.
Bondur et al U.S. Pat. No. 4,139,442 discloses the formation of a deeply recessed oxidized region in silicon by forming a series of closely spaced trenches and then oxidizing the walls of the trenches to utilize all of the remaining silicon comprising the walls of adjoining trenches. Lillja et al, in an article entitled "Process For Fabrication Of Shallow and Deep Silicon Dioxide Filled Trenches", published in IBM Technical Disclosure Bulletin, Vol. 22, No. 11 in April, 1980, describes the process steps involved in forming a bipolar transistor in an integrated circuit structure using isolation oxide materials which comprises forming a shallow oxide trench to separate the base and collector contact regions and a deeper oxide filled trench which surrounds the entire transistor.
Takemoto et al U.S. Pat. No. 4,484,211 teaches a bipolar transistor structure with an oxide isolation between the emitter and and the extrinsic base so that the capacitance between the emitter and the base is lowered.
Horng et al U.S. Pat. No. 4,339,767 discloses a process for forming a vertical NPN transistor and a lateral PNP transistor at the same time on a substrate with deep oxide-filled trenches electrically isolating the devices from one another. To eliminate the emitter current ejecting into the substrate, the P+ emitter and the P+ collector of the lateral PNP transistor are bounded by a silicon nitride and silicon dioxide dielectric layer.
In addition to forming slots in semiconductor wafers for isolating individual devices, slots have also been considered for use as passive circuit elements. For example, it has been proposed that a slot be filled with an appropriate material so that it will function as a capacitor. See, e.g., K. Minegishi et al., "A Sub-Micron CMOS Megabit Level Dynamic RAM Technology Using a Doped Face Trench Capacitor Cell", Proceedings, IEDM, 1983, p. 319; and T. Morie et al., "Depletion Trench Capacitor Technology for Megabit Level MOSdRAM", IEEE Electron Device Letters, v. EDL-4, No. 11, p. 411, Nov. 1983. Such applications are possible because with appropriate filling materials a slot can be made to be conductive or insulating as required.
It has also been proposed to construct active devices in slots in a substrate. Fujitsu Japanese Patent Document No. 57-11150 discloses construction of a lateral bipolar transistor wherein an emitter region is formed in a substrate by diffusing impurities into the substrate through the walls of a first slot formed in the substrate. A collector region is similarly formed in the substrate using a second slot formed in the substrate, located adjacent the first slot, to diffuse impurities into the substrate. The portion of the substrate between the emitter region and the collector region in the substrate is said to form the base of the transistor.
Engeler et al U.S. Pat. No. 3,762,966 teaches the formation of a bipolar transistor with precise control over width of the base region. The transistor is formed by first growing an N-type doped epitaxial layer over a heavily doped N-type semiconductor wafer to form a collector layer and then diffusing a heavily doped P-type base contact region into the epi layer. The structure is then masked with an oxide layer through which one or more openings or holes are etched through the base contact region into the N-type collector layer to permit formation of one or more emitters. Strongly N-type semiconductor material, containing both N-type impurities and faster diffusing P-type impurities, is then epitaxially grown to fill the holes. The structure is then heated to form an active base region below the emitter by diffusion into the epi collector layer of acceptor impurities from the doped epitaxial emitter material. The active base region is in contact with the epitaxial base contact region adjacent the emitter region. Metal contact are then formed to the epitaxial collector layer, the emitter, and the base contact region to complete the transistor.
Vora U.S. Pat. No. 3,703,420 discloses various methods for constructing lateral transistors in integrated circuit structures, respectively using monocrystalline and polycrystalline silicon which comprises forming a first epitaxial layer over a substrate and then doping an upper portion of this layer to form a base contact region therein. In the polycrystalline method, silicon oxide islands are formed on the epi layer and a second layer of epitaxial silicon is grown over the first layer. The second epitaxial layer is monocrystalline above the substrate and polycrystalline above the silicon dioxide. The structure is then masked to form openings in registry with the polysilicon portions and doped to form the active elements of the lateral transistor. The so-formed polycrystalline portions are used to convey dopant laterally into the adjacent monocrystalline portions to form the respective active elements of the lateral transistor. In both the monocrystalline and polycrystalline embodiments, the base and emitter are formed by doping through the same opening in the mask to form lateral P-N junctions between the base and emitter in the monocrystalline silicon. The base contact region in the first epi layer connects the base with a base electrode.
In accordance with the present invention, a bipolar transistor is formed in a slot in a substrate wherein a base region is first formed in the walls and bottom of a first slot which is filled with a substance which will form an emitter in the slot to thereby provide a self-aligned structure with a large base-emitter surface junction. Carrier transport occurs both laterally and vertically between the emitter in the slot and the surrounding base. A second slot, providing a collector contact region, is formed in alignment with the emitter slot. A buried collector layer, located beneath the portion of the base region formed in the substrate beneath the emitter slot, communicates with the collector contact region.
Such a construction results in a high performance device having lower collector-to-base and collector-to-substrate capacitances due to the respective relationships between the physical collector and base regions and the active collector and base regions.
For a more complete understanding of the bipolar transistor of the present invention, reference may be had to the accompanying drawings which are incorporated herein by reference and in which:
FIG. 1 is a cross-sectional view of an npn bipolar transistor of the prior art;
FIG. 2a is a cross-sectional view of a slot transistor structure of the present invention;
FIG. 2b is a plan view of the structure of FIG. 2a;
FIG. 3a is a cross-sectional view of another embodiment of the slot transistor structure of the present invention;
FIG. 3b is a plan view of the transistor of FIG. 3a;
FIG. 4a is a cross-sectional view of a more complex slot transistor structure in accordance with the present invention;
FIG. 4b is a plan view of the transistor of FIG. 4a;
FIGS. 5-13 are a sequence of cross-sectional views showing the formation of a slot transistor in accordance with the present invention in which: FIG. 5 shows the formation of isolation slots which bracket a transistor to be formed;
FIG. 6 shows the cross-section of FIG. 5 after the oxidation of the slot surface, the filling of isolation slots, the application of a thin etch stop layer defining a central emitter slot region 39 and the application of an overlying layer of polycrystalline silicon;
FIG. 7 shows the cross-section of FIG. 6 after the application of a layer of silicon dioxide and the opening up of a central emitter slot channel 46;
FIG. 8 is the cross-section of FIG. 7 after the partial formation of an emitter slot and the oxidation of polycrystalline silicon and the sidewalls of the partially formed slot and the definition of collector slot regions;
FIG. 9 is a cross-sectional view of FIG. 8 after the emitter slot region has been fully formed and a base region has been formed by diffusing;
FIG. 10 is an alternate cross-section for FIG. 9, following the cross-section of FIG. 8, after the formation of an emitter slot region, the diffusion of a base region and the formation of base contacts;
FIG. 11 is a cross-section of FIG. 10 after the partial formation of collector slots and the oxidation of polysilicon and silicon sidewalls and the filling of emitter slot;
FIG. 12 is a cross-section of FIG. 11 after the complete formation of the collector slots;
FIG. 13 is a cross-section of FIG. 12 after the collector slots have been filled and contacts have been formed to the base and collector regions;
FIG. 14 is a cross-sectional view of a slot transistor having isolation regions which extend through of FIG. 14;
FIG. 15 is a plan view of the slot transistor of FIG. 14;
FIG. 16 is a slot transistor having the collector slots formed within isolation slots;
FIG. 17 is a plan view of the contact scheme for one embodiment of the present invention;
FIG. 19 is a cross-sectional view of FIG. 18 taken through line 19--19;
FIG. 20 is a cross-sectional view of FIG. 18 taken through line 20--20;
FIG. 21 is a plan view of another contact scheme for the embodiment of FIG. 18;
FIG. 22 is a contact scheme of another embodiment of the present invention;
FIG. 23 is a plan view of a contact scheme of another embodiment of the slot transistor of the present invention; and
FIG. 24 is a cross-sectional view of FIG. 23 taken through line 24--24.
The active area of a transistor is determined by the size of the emitter. As lateral dimensions are reduced, it is only possible to increase this area for a given cross-sectional size by increasing the vertical dimension of the device. A bipolar transistor having an enhanced vertical dimension also may have a performance very close to the theoretical maximum due to the low levels of the critical components of parasitic capacitance. For example, in most circuit applications the collector-to-base capacitance (CCB) and the collector-to-substrate capacitance (CCS) are important parameters in determining device performance.
As shown in the prior art of FIG. 1, a typical bipolar transistor has an emitter 14 formed in a base region 13 which is in contact with a collector region 21. The device depicted is an npn transistor. Conduction of carriers across the pn junctions occurs over the full areal extent of the junctions. However, since the junctions are primarily horizontally disposed most of the carriers traverse a vertical or near vertical path. The vertical character of the carrier flow is enhanced by the presence of n+ buried collector 15 which takes away any lateral component of carrier flow that would result if the current flowed from base 13 through the bulk of collector 21 directly to collector contact region 12 and collector contact 16. Carrier flow, then, is from the emitter 14 to the base 13 across the junction 20 and between the base 13 and n+ buried collector 15 across the junction 22 and thence to collector contact region 12 and collector contact 16. As the densities of bipolar integrated circuits increase, the horizontal component of the two junctions decreases compared to the vertical component as the overall junction area decreases. This, in turn, reduces the gain of the transistor, and generally reduces performance by increasing parasitic capacitance, both undesirable consequences.
In vertical bipolar transistors of the prior art, as shown in FIG. 1, the physical collector is usually much larger than the active collector region in order to make effective electrical contact. With the slot structure of the present invention; however, the physical collector and the physical base are each virtually equal to the active base thereby reducing the related parasitic capacitances (CCB and CCS) to their minimums. The base-to-emitter capacitance (CBE) is larger due to the increased base doping allowed by the use of a SIPOS emitter; fortunately, CBE is not a critical determinant of speed in most bipolar circuits.
These various characteristics are set out in Table 1 which compares a transistor reported in the bipolar literature (see D. D. Tang et al, "1.25 Micron Deep Groove Isolated Self-Aligned Bipolar Circuits", IEEE J. of Solid State Circuits, Vol. 17, October, 1982, p. 925) with the slot type bipolar transistor produced in accordance with the present invention. As seen in Table 1, the slot type transistor has a significant improvement in the critical parasitic capacitances CCB and CCS and only has lower performance in the non-critical parasitic capacitance CBE. Thus, it is expected that the slot type transistor will not only be twice as dense as the prior art bipolar devices but will have better performance.
Various configurations for the slot transistor structure of the present invention are shown in cross-section in FIGS. 2a, 3a, and 4a. The common structural feature is that the emitter and collectors are formed in slots. In FIG. 2a, an emitter slot 26 is shown to be fabricated in spaced apart relationship from a collector slot 27. A base region 28 is diffused into semiconductor substrate adjacent emitter slot 26. In the embodiment of FIG. 2a, a diffusion barrier 29 has been formed along the left-hand wall of emitter slot 26 so that there is no diffusion into the left-hand side of the substrate 25 adjacent emitter slot 26. Carrier conduction will be from left to right, i.e., from the conductive SIPOS filling (not shown) in emitter slot 26 through base region 28 and into the SIPOS-filled (not shown) collector slot 27. SIPOS (Semi-Insulating Polycrystalline Silicon) may be doped to be a conductive material suitable for functioning as the active regions in transistors as described, for example, in T. Matsushita et al, "A SIPOS-Si Heterojunction Transistor", Japan J. Applied Physics, Vol. 20, Suppl. 20-1, pp. 75-81 (1981).
In the plan view of FIG. 2b, it is seen that the length of the emitter slot 26 and collector slot 27 are equal and that the slots are arranged in parallel spaced apart relationship. A second, probably more efficient, arrangement is shown in the cross-section of FIG. 3a. Here, collector slots 31 are formed on both sides of emitter slot 30. As seen in the plan view of FIG. 3b, the collector slot 31 forms a continuous slot which surrounds the rectilinear emitter slot 30. In this embodiment, base region 34 fully surrounds emitter slot 30. Carrier conduction is thus laterally outward from emitter slot 30 through base 32 to collector slots 31.
Another structure in accordance with the present invention is shown in cross-section in FIG. 4a. Here, an elongated emitter slot 32 is shown to have collector slots 33 formed in parallel spaced-apart relationship. As seen from the plan view of FIG. 4b, the emitter slot 32 is shaped in the form of a cross with the collector slot 33 being formed around it in congruent relationship. Typical widths for the slots in the various embodiments will be 0.1 to 0.3 micrometers for the base, 1 to 1.5 micrometers for the collector slot, and 1 to 1.5 micrometers for the emitter slot. The slot depths will vary depending upon application but will be in the range of 5 to 30 micrometers.
A process for fabricating the structure of the present invention is shown in the series of FIGS. 5-13. Although the structure of the present invention may also be fabricated in III-V compounds with those masking and filler materials being used which are known in the art to be appropriate to the particular III-V material, for the purpose of this specification, the ensuing description will be of a silicon substrate with masking and filler materials which are compatible chemically and metallurgically.
Referring now to FIG. 5, an n+ buried diffusion layer 39 has been formed in substrate 44 and an n- type epitaxial layer 38 has been grown on the surface of n+ buried layer 39. The n+ buried layer 39 serves to reduce series resistance in the collector contact as described subsequently, particularly with respect to FIGS. 12 and 13. The term "substrate", as used hereinafter, will include the buried layer and the epitaxial layer grown on the surface of the buried layer.
Still referring to FIG. 5, isolation slots 40 are shown to be formed in a semiconductor substrate 44. Isolation slots 40 extend through pn junction 36 formed between n+ layer 39 and p-type substrate 44 in order to isolate the bipolar transistor to be formed from adjacent transistors fabricated in the same integrated circuit.
In the isolation slots 40 of FIG. 5, a thin silicon dioxide layer 37 is grown over the entire interior surface. This layer accomplishes the electrical isolation. Then, a filler material 40' is applied as shown in FIG. 6. The filler material is selected from the classes of conductive and insulating materials including, such materials as silicon nitride, SIPOS, polycrystalline silicon, metal oxides, silicon, silicon dioxide, etc. The material must readily flow into the slots or deposit on the surface of the slot, preferably in an isotropic fashion. The choice of filler material will generally reflect the desire to have a material which has the same coefficient of thermal expansion as the surrounding silicon in order to avoid thermal stress. Thus, either polycrystalline silicon or SIPOS are the preferred filler materials as they have the same coefficient of thermal expansion as the surrounding silicon.
For the isolation slots, the actual isolation is accomplished by the thin silicon dioxide layer 37 formed around the interior surface of the bare slot. For the active regions, such as emitter 46" and collectors 45", the slot will be filled with heavily doped SIPOS. Typically, the slot is overfilled, and the surface of the material is planarized by an isotropic etch, such as a fluorinated plasma. The slots are formed, for example, by reactive ion etch equipment, preferably with a chemically active species so that physical and chemical etching steps are combined. See, e.g., D. N. K. Wang et al, "Reactive Ion Etching Eases Restrictions on Materials and Feature Sizes", Electronics, Nov. 3, 1983, pp. 157-159.
As shown in FIG. 6, the slot regions and portions of the interior region in which the active device is to be formed are covered with a stop layer 43 of a material, such as silicon dioxide or silicon nitride. This serves to open up a central region 39 in which an emitter slot is to be formed and to protect adjacent regions 38 where collector slots are to be formed. This approach, which permits self-aligned slots to be formed on a semiconductor substrate, is described and claimed in Bower U.S. Pat. No. 4,579,812, issued Apr. 1, 1986. A layer 42 of polycrystalline silicon is then applied which overlies stop etch layer 43 and reaches down onto the surface of substrate 44 within region 39.
As shown in FIG. 7, a silicon dioxide layer 49 is then formed over polysilicon layer 42. Layers 42 and 49 are patterned to define a first type slot region 46 where emitter slots are to be formed and second type slot regions 45 where collector slots are to be formed. The slot regions are self-aligned as described in detail in the Bowers '812 patent referenced above.
The slot regions are etched down to the silicon substrate, in the case of emitter type slot region 46, and down to stop layer 43, in the case of collector type slot region 45. The etch will have selective properties so that stop layer 43 is not penetrated. See, e.g., L. M. Ephrath, "Reactive Ion Etching for VLSI", IEEE Transactions on Electron Devices, v. ed-28, No. 11, November 1983, p. 1315.
Next, as shown in FIG. 8, the emitter type slot is shown to be partially formed. The dotted line 46' shows the full extent of the slot when it is completely formed whereas the solid line 47 shows the bottom extent of the partially formed slot. After etching the substrate to partially form the emitter slot down to line 47, an oxidizing step is carried out to oxidize the exposed side edges of polysilicon layer 42 in the emitter slot as well as the partially formed collector slots and to oxidize the exposed side edges of the silicon substrate in the partially formed emitter slot.
This oxidation step produces oxidized regions 52b at the exposed edges of the polysilicon layer 42 for the partially formed collector slots and oxidized regions 48 at the exposed polysilicon and silicon edges of the partially formed emitter slot. Oxidized regions 48 will serve to isolate the base contact regions 51 from the active emitter region 46", shown in FIGS. 11-13. Oxidized regions 52b will prevent any dopant incorporated in polysilicon layer 42 from electrically altering the filler material placed in collector slot 45'.
In a preferred embodiment, the oxidized regions 52a shown in FIG. 11 for the collector slots are also formed at this time so as to ensure that the base contacts 51 touch neither the active collector 45" or the active emitter 46". In order to accomplish this result, it is necessary to partially form collector slots 45' so that the upper sidewalls of the slots are exposed during the oxidation step and the exposed silicon is converted to silicon dioxide. Most preferably, the oxidized regions 52a have a lower vertical extent than the oxidized regions 48 to ensure that, in the case of misalignment, there is no contact between the active collector 45" and base contact region 51. In both the emitter and collector slots, however, as best seen in FIG. 12, the extent of the oxidation is about one half of the entire depth of the slot. In the embodiment shown in the figures, the oxidized regions 52a are formed after the base contact regions 51, a practice which is permissible if the slots are self-aligned.
In the embodiment of the figures, the next step, shown in FIG. 9, is the complete formation of the emitter slot 46'. Then, a standard diffusion step is used to produce the active base region 50 adjacent the exposed surfaces of empty slot 46'. Alternately, the emitter slot may be filled with SIPOS having multiple dopants with differential rates of diffusion, e.g., with boron and arsenic. Since boron diffuses more rapidly than arsenic, it may be driven into the surrounding silicon, leaving, e.g., an n-type arsenic-doped emitter and a p-type boron-doped base.
A contact to base region 50 may be formed in a subsequent step by driving a dopant into the upper regions of the base region 50 from the portion of layer 42 adjacent oxidized regions 48. As shown in FIG. 10, the base contact regions 51 may also be formed during the process of driving in the diffusion which produces base region 50 provided that suitable dopant is contained within polysilicon layer 42. The emitter slot 46', if not already filled with SIPOS as described above, is then filled with a suitable filler material 47' to produce an active emitter slot region 46", shown in FIG. 11 and following.
The collector slots 45', if not already partially formed as described above, may now be partially formed, as shown in FIG. 11. In contrast to the preferred embodiment discussion above, the isolation regions 52a are then produced by an oxidation step which oxidizes the portions of the n-type epitaxial layer 38 which are exposed at the upper edges of the slot. These regions serve to isolate the active collector regions 45" to be formed from base contact regions 51. Finally, the collector slot regions 45' are fully formed, as shown in FIG. 12. Oxidized regions 52b which were formed at the same time as oxidized regions 48 (see FIG. 8) serve to keep any doping in polycrystalline silicon layer 42 from altering the electrical properties of the filler material placed in active collector region 45". The completed devices is shown in FIG. 13.
Then, contacts are formed to the respective regions. Since the slots may be much longer than they are wide (see the rectilinear shape of emitter slot 30 of FIG. 3b and the cross shape of emitter slot 32 of FIG. 4b), a contact can be made at a single point or at several points, providing the series resistance to the full volume of the regions is tolerable. As shown in FIG. 13, the contact resistance to the collector regions is reduced by n+ buried collector layer 54 which ties active collector regions 45" together. This buried collector 54 is formed by that part of the n+ layer 39 which is bounded by isolation slots 37.
As shown in the cross-sectional drawings of FIGS. 10-13, the base region 50 has already been contacted by contact regions 51. Now, external contacts are made to base, emitter and collector regions. These are applied once the active regions of the transistor are fully formed as shown in FIG. 13.
Various slot isolation schemes are feasible for use in conjunction with the slot transistor structure of the present invention. As shown in FIG. 14 and the plan view of FIG. 15, isolation slot 65, is used in conjunction with the emitter slot 63 and the collector slots 64, fully surround the transistor structure. Preferably, they will be self-aligned as described in the aforementioned Bower '812 patent. Preferably also, the isolation slots 65 will extend through a pn junction separating n- type epitaxial layer 62 and p-type substrate 61.
Alternatively, for more compact structures, the collector slot 68 may be formed in a portion of previously formed slot 72 in an integrated isolation scheme. As shown in FIG. 16, slot 72 is formed first in the substrate region 67. Then, a thin layer of insulating material, such as silicon dioxide, has been formed, for example, by thermal oxide growth, around the interior surface of oversized slot 72. After being filled with an insulating filler material 71, a smaller slot 68 has been formed within slot 72 in a manner to not disturb the oxide coating of the outer wall. Electrical isolation from adjacent devices is provided by the insulating layer 70 remaining on the outer wall of slot 72. The transistor structure functions as described above once a base region (not shown) is formed around the emitter formed in slot 69. Since the principle of bipolar slot transistors is to increase the vertical extent of the active regions and allow lateral dimensions to be reduced, a practical concern for commercial devices will be the making of electrical contacts to each of the slot regions. The narrowness of the slots makes contact difficult. In addition, in order to avoid high spreading resistance, it will be desired to contact the full extent of the slot or to contact the slot at numerous points along its extent.
Numerous contact schemes are shown in FIGS. 18-24. In FIG. 18, advantage is taken of the use of a buried collector. Thus, it is possible to contact active collector regions 45" by strip 79 at the ends of its U-shaped slot. No significant spreading resistance occurs because of the presence of the buried collector 54 which ties the collector volume together as shown in FIG. 13. The active emitter region 46" is small so that no appreciable spreading resistance is produced by contacting it by layer 80 at an edge, especially since strip 80 contacts almost the complete top of the emitter surface. The base contact is accomplished by base contact layer 42 which runs underneath strip 80 and is separated by insulating layer 49, shown in FIG. 20. In general, it is feasible to contact the closely arrayed bases and emitters because stacked conductive contacts are used with intervening insulating layers.
In FIG. 21, another scheme for contacting the transistor structure of FIG. 18 is shown. Collector contact 82 contacts the back side of the U-shaped active collector region 45". Emitter contact layer 83 substantially covers the surface of active emitter region 46" and is accessible at one side of the transistor structure. The base contact layer 84 contacts substantially all of the base region 50. Here, the emitter contact layer 83 underlies the base contact layer and is separated by an insulating layer of the type shown in FIG. 20.
Contact schemes for embodiments of the present invention which employ integrated isolation are shown in FIGS. 22-24. In FIG. 22, the U-shaped active collector region 87 is formed in the inside of collector slot 88. The active emitter region 86 and the base region 85 are formed, as shown for example in FIG. 16. Contact layer 82 contacts an edge of active collector region 87. No appreciable spreading resistance is experienced due to the use of a buried collector (not shown). Base contact layer 93 contacts substantially all of base region 85. Emitter contact layer 94 contacts a substantial portion of active emitter region 86. As shown, base contact layer 93 overlies emitter contact layer 94; the two layers are separated by an insulating layer (not shown) in the manner shown previously in FIG. 20.
In FIG. 23, an integrated isolation scheme involving spaced-apart parallel collectors and emitters is shown. Here, active collector region 102 is formed in spaced-apart parallel relationship with active emitter region 103. The base region 104 is located adjacent the length of emitter 103.
As shown in the cross-sectional view of FIG. 24, emitter contact 99 extends down to reach active emitter region 103 and extends to one side over the intervening layers of silicon dioxide 49 and polysilicon 42. Similarly, in mirror image fashion, collector contact 97 makes contact with active collector region 102 and extends away to the opposite side over silicon dioxide layer 49 and polysilicon layer 42. Base contact layer 98 extends in an orthogonal direction but reaches down to contact base 104 over the extent of the base. Base contact layer 98 is kept electrically insulated from collector contact layer 97 and emitter contact layer 99 by means of an intervening insulating layer (not shown). In order to avoid an emitter base short, insulating regions 105 have been formed within the filler material in isolation slots 100 and 101. These isolation zones prevent contact between the emitter contact layer 99 and base region 104. The oval regions 106 and 107 are oxidized zones formed as described above with respect to FIGS. 5-13; in similar fashion they serve to prevent shorting between active regions. It should be noted that many contact schemes are feasible. The approaches shown in FIGS. 18-24 are illustrative only.
The foregoing description of a preferred embodiment of the invention has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible, such as the selection of different substrate, masking and filling materials. The silicon embodiment was chosen and described in order to best explain the principles of the invention and its practical application to thereby enable others skilled in the art to best utilize the invention in various embodiments and with various modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims appended thereto.
TABLE 1______________________________________COMPARISON OF BIPOLAR TRANSISTORCHARACTERISTICSTransistor Type Area* CCB RBI CBE CCS______________________________________Bipolar in 70 .37 .02 4.4 .1Literature**Slot Type 30 .34 .05 4.4 .05______________________________________ *Square Micrometers CCB is capacitance between base and collector. RBI is cumulative series resistance from base contact to base region. CBE is capacitance between base and emitter. CCS is capacitance between collector and substrate. **D.D. Tang, et al, "1.25 μm Deep Groove Isolated SelfAligned Bipolar Circuits", IEEE J. of Solid State Circuits, Vol. 17, October 1982, p. 925
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Home » NewHampshire.com » Travel & Tourism » Merrimack Valley
First responders unite to help Farmington EMT with cancer
While terminal lung cancer prevents Farmington Emergency Medical Services Lt. Scott Norton from responding to calls for help from residents, his long-standing, selfless dedication brought the community together.
Former Middleton Fire Chief John Nicastro, who now serves as a firefighter in Lyndeborough, said he drove across the state to support Norton.
Norton's wife, Cheryl, said the cancer was discovered last September while he was suffering from pneumonia. She said they were both amazed at the outpouring of support from area firefighters, police and emergency personnel.
"He misses it (helping others) terrible," Cheryl said. "There are times I have to shut the radio off because he wants to go."
As he requires a wheelchair — which was donated by Steve Dean — to get around, Norton admitted he can no longer even come down to the station as he gets so tired from standing up.
They plan to enjoy the little things.
To recognize Norton's many years of service, Middleton Selectmen presented him with a check for $750 at the event Saturday.
"We can't put a number on what you've done for the town of Middleton, or the town of Farmington," said Middleton Selectman Chair Terry Laughy.
Willey, who portrayed one of the two characters in the play, said he was honored to help Norton and was glad he was well enough to attend the June 7 performance.
Norton said he was so impressed by the performance that he recommends everyone seek out an opportunity to see the play, which tells the tale of two people through the letters they wrote to one another.
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4 Summit Road is on the market in Weston for $7.99 million.
One-of-a-kind $7.9M estate packed with character, charmPublished 8:18 PM EDT Sep 19, 2013
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"Mule in Hale County, Alabama, 1935." Photo by Walker Evans. View full size.
The R.P. Bean Ranch, with four cowboys and three horses, near Van Horn, Texas, c. 1910. View full size (Courtesy Portal to Texas History).
August 1912. "The wagon that delivers Home Work to Somerville, Massachusetts. The owner of the wagon (who is not the driver) is O. H. Brown, 27 Main Street, Reading. These wagons (about 4 in all) are worked on commission, not owned by factory." ("Home work" here meant pre-cut cloth patterns ready to be sewn into various articles of clothing.) View full size. Photograph by Lewis Wickes Hine. Note the curious tassels hanging off the horse. (Answer: It's a fly fringe.)
"Eight-year old Jack driving horse rake. A small boy has difficulty keeping his seat on rough ground and this work is more or less dangerous." August 1915, western Massachusetts. View full size. Photograph by Lewis Wickes Hine.
"New York City: Horse overcome by heat." Circa 1910. View full size. George Grantham Bain Collection. Hopefully the equine ambulance was on its way.
"See what Prince will do for me." Prince Albert, Ida Cuthbertson's "famous educated horse." Brown Studio, Riverside, circa 1909. View full size.
Fortified railroad bridge across the Cumberland River at Nashville, 1864. "Continuing his policy of the offensive at any cost, Gen. John B. Hood brought his reduced army before the defenses of Nashville, where it was overthrown by Gen. George H. Thomas on December 15-16, in the most complete victory of the war. If the date borne on this photograph is correct, it was taken in the course of the battle." View full size. Wet collodion glass stereograph by George N. Barnard.


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This profile was last updated on 11/7/13 and contains information from public web pages and contributions from the ZoomInfo community.
Dr. Kjell A. NordströmWrong Dr. Kjell A. Nordström?
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November 27, 2014
City of Killeen Press Release
City Council Meetings Available Online
(KILLEEN, TEXAS): City council meetings can now be viewed online at www.killeentexas.gov.
Archives of the May 31 and June 5 workshops are now available. The June 12 workshop and meeting will be streamed live beginning at 5 p.m. Tuesday.
The new online service is in addition to broadcasting city council meetings on the government access channel, Time Warner Cable Channel 10, which the city has done for more than 15 years.
"We recognize that people don't want to be tethered to a broadcast schedule," said Hilary Shine, director of public information. "Making meetings available online allows people to access them 24 hours a day from any device with an Internet connection."
To navigate from the city homepage, users will click the tab labeled City Council Meetings which leads to a page containing meeting agendas, minutes, and presentation files. On that page, there is a link titled Televised Meetings that leads to meetings streamed live while in progress and archived meetings for play back.
"We think people will be pleased with the function of this system," said Shine. "The streaming and archives are very high quality and load quickly. We've also added meeting agendas to the video player for easy reference."
Click Here to access the online Public Inspection File
Viewers with disabilities can get assistance accessing this station's FCC Public Inspection File by contacting the station with the information listed below. Questions or concerns relating to the accessibility of the FCC's online public file system should be directed to the FCC at 888-225-5322, 888-835-5322 (TTY), or email@example.com.


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Find records of Carl Andeer
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Carl Andeer (1902 - 1966) was born on January 30, 1902. He was born into the Andeer family.
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Helicopter Services Boston
30 Rowes Wharf, Suite 330, Boston, MA 02110
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Helicopter rides over historic Boston and Cape Ann. Fly over beaches, harbors, lighthouses. Enjoy Boston's skyline and famous landmarks from a unique perspective.
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Bright Nights & Pretty Lights at Forest Park in Springfield
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Serving Size (1 of 20 bars), Calories 250 (Calories from Fat 130), Total Fat 14g (Saturated Fat 4.5g, Trans Fat 0g), Cholesterol 20mg, Sodium 100mg, Total Carbohydrate 28g (Dietary Fiber 1g, Sugars 20g), Protein 4g; Percent Daily Value*: Vitamin A 2%, Vitamin C 0%, Calcium 4%, Iron 8%.
*Percent Daily Values are based on a 2,000 calorie diet.
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I just got a new job, and it allows me to work from home. Great, right? But I'm worried that my style is going to devolve into sweatpants and mu-mus. Can you help me find some work-from-home appropriate pieces that will get me motivated? –Jenny
Since all of us Frisky ladies are in a similar work-from-home boat, I can sympathize with your plight. While some are more comfy and productive in sweats (hey, don't knock it 'til you try it), others work way better dressing like they're heading to an office for the day. Personally, I fall into the latter category. Everyday, I dress up — not in a suit or anything — but in something work appropriate, so that I can get in the work mindset. And also, in case there's a fire in my building or some kind of emergency (like, say, someone spots Joseph Gordon-Levitt hanging out in the neighborhood) that forces me out of my apartment, I'm ready to go. My biggest work outfit productivity trick? I wear shoes in the house. Putting shoes on seems to really get me in the game. After the jump, a cute and comfortable option for you. Keep reading »


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While kissing, the nose meets the chin or vice versa. Also known as an upside down kiss.
Did you see Roland chinosing Juliana?! He caught her off guard and it was hilarious!
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13 Reviews
Average Customer Review
Share your thoughts with other customersCreate your own review
Most Helpful First | Newest First
6 of 6 people found the following review helpful
5.0 out of 5 stars Endearing and Moving,
Emsy84 (England) - See all my reviews
This is the second book of three in the follies series and although it isn't a cliff hanger in the true sense, it certainly leaves you wanting to know how it will all end!
This book starts where the first finished off - and lets us see how the decisions they have made will alter the courses of their lifes. For Rose it seems that her dream is now over an all she has to look forward to is plain (as plain as plain is in the middle of a war) everyday life. Richard closes himself off from the world after his shattering discovery on new years eve and leads himself back into danger. And for Felix and Merry it seems all is well - but is it?
This series seems to improve with every chapter and has managed to fully engross me! Would recommend to anyone with a heart!
1 of 1 people found the following review helpful
5.0 out of 5 stars wartime drama,
ruralbuyer (Lincolnshire UK) - See all my reviews
A thoroughly good read, a nice mix of the entertainment side of the forces and the resistance movement in France. The second in a series of four, and just as good as the first one. Seems good on accuracy as well.
5.0 out of 5 stars Five Stars,
loved the book
5.0 out of 5 stars A forgotten face of World War 11,
having lived through this period, every word rings true, so I bought the rest of the books
Now my wife is passing them around friends
5.0 out of 5 stars Second World War reading,
Only just started reading Hilary Green books excellent reading just can't put this book down!!!
Now ordering more of her books.
5.0 out of 5 stars Very good read,
This review is from: They Also Serve (Follies Book 2) (Kindle Edition)
Arrived very quickly in good condition, I am really pleased as it meant I could read the whole series in one go!
5.0 out of 5 stars Another fantastic book,
This review is from: They Also Serve (Follies Book 2) (Kindle Edition)
I have already read 'Follies 1' and found it to be compelling reading. Likewise with this book, I didn't want to put it down. I am now reading 'Follies 3'. I look forward to reading the final one, but will also be sorry because the series will have ended.
5.0 out of 5 stars well worth a read,
The Good Daughter (UK) - See all my reviews
I chose this because it was set during ww2 and thought it might be worth a read as it covered more than just people in the service. Have to say I really enjoyed it - the characters are all very likeable and the settings are all very realistic - if you like this kind of subject matter and enjoy a light read this is well worth picking up
5.0 out of 5 stars Wartime memories,
This book is the second of a quartet of books by Hilary Green about characters in the entertainment business during WW11. It is extremely well written and a book (all of them) which you cannot put down. The characters are fascinating and well drawn and you are given a real insight into their participation during the war.
4.0 out of 5 stars BOOK REVIEW,
I had not heard of this author before I picked this audio book up from my local library. I was delighted to at the details in the story line, especially the more personal touches. One could imagine that it was happening last year and not in the early 40s. Well written researched and presented. I have purchased this as a Xmas present. This book is part of a set of four books (Follies) I believe that there is enough information to make a film
Most Helpful First | Newest First
They Also Serve (Follies Book 2) by Hilary Green


text: I am Christy and have been married since June 2001 and it has been a long process ttc. I recently had an ectopic pregnancy and now I am waiting for November to try again. It seem like a long wait but my body isn't even ready because I am still bleeding from ectopic. I am hoping my body will cooperate so i can have another IUI in November. My 36th b-day is in November so I really want to have a baby soon. My clocks a ticking.... :)


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Bowers & Wilkins A7 AirPlay Wireless Music System
Bowers & Wilkins A7 AirPlay Wireless Music System
Product Information
The ultimate wireless music system, Bowers & Wilkins' A7 speakers give you the best of quality audio engineering and superior electronics with wireless AirPlay streaming from your iPad, iPhone and iPod.
Superb sound wirelessly
Wireless audio is up-sampled through A7's audiophile-quality 96kHz/24bit Digital-to-Analogue Convertors (DACs), reducing noise and increasing dynamic range, for a more detailed, natural sound.
Powerful drivers
For a natural and widely spread sound, there's a 6-inch Kevlar-reinforced subwoofer delivering rich, deep bass and a bank of four high-quality drive units providing excellent dispersion. Each of the five drive units is powered by dedicated audiophile Class D amplifiers, so A7 delivers truly impressive audio quality.
Easy set-up
The free Bowers & Wilkins AirPlay Setup App will walk you through the simple steps to connect your A7 to Wi-Fi, and choose and manage your settings, all wirelessly.
- Audiophile quality DACs for natural sound
- Five drive units, individually powered for high-quality audio
- 6-inch Kevlar-reinforced subwoofer for rich, deep bass
- Advanced Digital Signal Processing for great sound at all listening levels
- AirPlay for high-resolution wireless audio streaming
Did you notice?The discreet design means it works brilliantly in out-of-the-way places where it won't be noticed, such as bookshelves.
Apple Recommends ForPlaying and controlling your music wirelessly, from anywhere in the room.
What's in the Box?
- Bowers & Wilkins A7 AirPlay Wireless Music System
- Power cord
- Remote control
Tech Specs
- Frequency Response: 36 Hz - 42,000 Hz
- Input Type: 3.5mm Stereo Jack, USB
- Other Features: AirPlay
- Connections: AirPlay
- Speaker Configurations: Stereo
- Drivers: Five
- Power Source: AC
- Height: 220 mm/8.66 in.
- Width: 360 mm/14.17 in.
- Weight: 5.7 kg
- Length: 160 mm/6.3 in.
Manufacturer Information
Part Number
- Mfr. Part Number: FP33502
- UPC or EAN No.: 714346314720
- Note: Apples begrænsede dækning på 1 år gælder ikke for produkter fra andre producenter end Apple, selvom de er pakket eller sælges sammen med Apple-produkter. Produkter fra andre producenter end Apple kan være omfattet af producentens garanti – se kassen/æsken med produktet og den medfølgende dokumentation. Fordelene ved producentens garanti rækker ud over rettigheder iht. forbrugerbeskyttelseslove. Klik her for at se flere oplysninger her.
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iPhone models
iPad models
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iPod touch 5th Generation 32GB/64GB
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Ratings & Reviews
Simply Magnificent
A magnificent product, tremendous piece of industrial design and performance. Musical excellence, coupled with cutting edge techno A magnificent product, tremendous piece of industrial design and performance. Musical excellence, coupled with cutting edge technology, create an incredibly compelling product.
Minimalist, classy, expensive.
//Build Quality
Absolutely what you would expect from Bowers & Wilkins - top notch. From the nautilus tweeters, to the class D amplifiers powering each driver, this speaker oozes quality.
Sublime! Detailed throughout the range, well balanced, and delivering the vinyl-esq warmth that is the B&W trademark. The soundstage produced from one box is incredible. The DAC upscales lossy MP3s to deliver a depth that only the most discerning of audiophiles will be pick holes in. In a word, incredible.
Flawless, delivering lossless streams from iPad, iPhone and iMac without issue. One cautionary note, lossless streams require a strong WiFi connection to prevent break in streams from packet loss.
A doddle, the app from B&W is simple and effective.
//A7 or A5?
I have both the A7 and the A5, so can make a real life comparison between the two. The A7 provides a more dynamic range from the seperate sub-woofer, offering greater detail in the low to mid range. The A5 therefore has a 'fresher' feel, with greater reliance on mid range. However, both are incredible, and in a blind test the average consumer would be hard pushed to notice the difference. If you have the money, get the A7, however if you get the A5 you will be more than happy.
This speaker will make you love with music again. Get one without hesitation. …
- Written by Jamie V from Milford
40 of 42 people found this useful
Powerful and Detailed
I have been a fan of Bowers and Wilkins since I got the MM-1's, so I was interested in listening to the A7 particularly as I'm lim I have been a fan of Bowers and Wilkins since I got the MM-1's, so I was interested in listening to the A7 particularly as I'm limited for space in my flat.
The unit itself is stylish and more importantly sonically packs detail and power, from New Order to the Clash it handles really well. Just be careful where you place it, I have it 2 inches away from the wall and the bass is really tight.
Not cheap, but great piece of hardware. …
- Written by Michael S from Manchester
28 of 29 people found this useful
Simple and stunning
Setup took less time than unboxing. Easy but naturally, RTFM!
The sound is, for a single box, stunning. To qualify what I say Setup took less time than unboxing. Easy but naturally, RTFM!
The sound is, for a single box, stunning. To qualify what I say, let me tell you that I use an AK120 with an RSA blackbird and an Ultrasone Edition 8 set of cans for my portable setup after years of experimentation with portable sound.
The box can sound a little bass heavy if you position it incorrectly, but overall the trebles are clean and detailed without much discernible sibilance, the mid tones are strong and refined without being domineering. The bass is extended and clean without being boxy.
The SN ratio is excellent across the whole range at all volumes.
I have a rather extreme HiFi setup, but there are times I listen to the music and actually forget it is just the A7 I have put on and not the dual mono block valve amps and the electrostatics. Yes, it is that good if you take some time to position it right.
Solid build quality. Not as uber-stylish as some people reckon (in my opinion) but nice and discrete and easy to forget about until you stream some content through it.
Highly recommended. …
- Written by philip W from Plymouth
18 of 18 people found this useful
Marvellous quality and seamless operation.
- Written by Natalie W from Upton upon Severn
1 of 1 people found this useful
Almost a one star until...
I was about to return this speaker - because of the wifi/Airplay link not working very well. I have a strong signal and use Airpor I was about to return this speaker - because of the wifi/Airplay link not working very well. I have a strong signal and use Airport Extreme router , so was very disappointed when the speaker kept spluttering and stalling whilst using the Airplay setting - it was happening at least once every couple of minutes and also losing the network setting. I had to keep resetting the speaker and inputting all the wifi settings. In the end I moved my modem and router into the same room as the speaker and now the Airplay works perfectly. The sound quality is excellent and cannot be faulted. The speaker is quite small so fits perfectly on a book shelf. I've connected it to my iPhone and iPad without any issues and also trialled the USB input which works really well should it ever be required. I'm now delighted with it - and it deserves the 5* …
- Written by Iain J from Wirral
1 of 1 people found this useful
Having been a Bower & Wilkins fan and owning a good few of there products for many years another fantastic product .
Bass and c Having been a Bower & Wilkins fan and owning a good few of there products for many years another fantastic product .
Bass and clarity superb .
I know the price is maybe high but you get a product that is built by craftsmen that know how to build speakers.
Well done again to Bower & Wilkins
Mike …
- Written by Michael B from Doncaster
1 of 1 people found this useful


text:
"Local News"
is the night for the Community Thanksgiving Service sponsored by the
The deadline to get your
The Mayor and City Council have
rescheduled the budget work session from yesterday to this Monday December 1st
at on the 3rd floor of the
While Black Friday shopping takes center
stage this time of the year, don't forget about Small Business Saturday!
Weather-wise, Thanksgiving Day is looking good but it will be a rather raw day today before we get there. Our high today was 59 which occurred right at 6 this morning. Expect the temperatures to hold steady this morning and then fall through the afternoon. The bulk of the heavy rain will be more towards the east but we can expect light rain and drizzle with winds and you have yourself the makings of a damp, cool day. The rain chances will diminish by early Wednesday morning and sunshine will return by tomorrow afternoon. The highs on Thanksgiving Day will be in the 50s and lows in the 30s.
It was a rather routine Monday for
the Americus Police Department. A burglary was investigated at
A theft took place at
An armed robbery that occurred in the
A shoplifting incident was reported
An auto was entered at
A counterfeit bill was turned over to
officers at
2-counts of criminal trespass were
reported at this
morning. Signs at 715 and
There was 1 domestic-related call answered by officers yesterday.
Officers worked no accidents in the City yesterday.
Here's a few tips if you'll be out shopping early on Black Friday: Lock and secure your vehicle at all times; park in well-lit areas; never carry too many purchases at one time and have your hands tied; place your purchases in the trunk or in your floorboard; be mindful of who may be watching when you pay, especially if paying with cash; if at all possible, shop with someone—there is safety in numbers. One big tip is just use common sense and make your holiday shopping fun instead of drama.
Housed in the


text:
Judith A Ryan
London, KY
Basic information on Judith A Ryan, London KY. Find Judith A Ryan's age, gender, possible aliases, relationship status and professional status.
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London, KY
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2001 Bxxxxxxxxx Dx
London KY
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Louisville, KY
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(606) ***-**** - Clay City, KY
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Office 365 Public Websites + Introducing Delve – Keith Tuomi, SharePoint MVP – vSharePoint / vOffice365 User Group Presentation
Here's my presentation from today's vSharePoint and vOffice365 user group in Victoria BC. Be sure to also check out our Office 365 hosted site at www.vsharepoint.com, which has all past Presentations available for download. NOVEMBER 2014 EDITION: We're mixing things up this month! This month we're bringing the members of vSharePoint and vOffice 365 together Read More


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simply sweet cakery
2930 Grace Lane
suite F
Costa Mesa, CA 92626 | map
Website: Visit my website »
Dietary options: Gluten Free
Desserts: Cookies, Cupcakes, Dessert Buffet, Groom's Cake
Health license: Yes
Additional services: Consultations, On-site Delivery, On-site Setup...
About Us
simply sweet cakery specializes in cakes, cupcakes, and desserts for any occasion. we custom design your perfect cake then use only the freshest and highest quality ingredients to make your dream dessert. with over 10 years in the industry our knowledge and experience ensures your cake, cupcakes, or other desserts will be the sweetest part of your event. simply sweet cakery promises beautiful, delicious, and affordable cakes you will never forget.


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This exhibit highlights two representations of warfare in pre-Hispanic Mesoamerica and the Andes. First, the exhibit includes fineline drawings of images painted on ceramic vessels produced by the Moche, a culture that flourished on the north coast of Peru in the first centuries of the Common Era. Second, the Lienzo de Quauhquechollan tells the story of the conquest of Guatemala by the allied forces of the warriors of Quauhquecholteca and the Spanish. Start getting oriented by browsing this map.
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Stirrup Spout Bottle With Fineline Drawing
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Moche Depictions of Warfare
The Moche Archive of photographs and drawings, created by Christopher Donnan and now housed at Dumbarton Oaks, is a remarkable resource for the study…
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Capturing Warfare
This exhibit highlights two representations of warfare from pre-Hispanic Andean South America and Mesoamerica. Included are fineline drawings made from...


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Riding Skills
09 June 2011 16:54
BMW is offering the chance to learn to ride off-road with World Superbike racer Leon Haslam on 24-25 July 2011.
Leon will be assisting Chief Instructor Simon Pavey at BMW's Off Road Skills a few days before he heads to Silverstone for the British round of the World Superbike Championship. 28 lucky riders will be able to book a place on this one-of-a-kind course.
The course cater for all off-road abilities from novice to expert. With a well-structured syllabus and friendly, expert instructors, a fleet of BMW adventure sports bikes and the stunning 4,000-acre Walters Arena in the Brecon Beacons to learn in, BMW Off Road Skills is one of the UK's premier enduro and adventure bike riding and training experiences.
Leon Haslam said: "I started my racing career in motocross before switching to track bikes in 1997. I love riding off-road, it's a fantastic way to keep fit and have fun. I can't wait to get back on an adventure sports bike, pick up some tips from Simon and hopefully pass on some of my own experience to the riders who join us there. Having taught with my dad at his race school in the past, I hope I can be of some help!"
Simon Pavey said: "We're very excited to have Leon coming to the school. He's a perfect illustration of how riding off-road keeps you in good shape and helps build you r confidence on the road and track. Whether you're coming to ride with us for the first time, or you're returning to take on our most advanced off-road course, this is the perfect opportunity to come and ride with BMW's World Superbike rider Leon Haslam."
The price of the BMW Off Road Skills two-day Level One to Three course is £479. This includes two days instruction, motorcycle hire, third party insurance, fuel, two lunches and one evening meal, refreshments and a certificate of completion. It does not include accommodation or evening drinks.
All participants must be over the age of 21 and have a full UK, EU or International motorcycle licence. Places are limited so riders should book soon to avoid missing out on this exclusive course.
For more information about the World of BMW activities and events visit www.worldofbmw.com. To book a place on the event on 24-25 July with Leon Haslam, you will need to log in or register on the www.offroadskills.com website - click here for a direct link.
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Domestic violence workshop set for Thursday
Published: Monday, July 14, 2008 at 10:12 a.m.
Last Modified: Monday, July 14, 2008 at 10:13 a.m.
OCALA - A free domestic violence educational workshop will be held from 3 to 5 p.m. Thursday, July 17, at the Ocala Police Department Community Room, 402 S. Pine Ave., in Ocala.
Information will be given about services that are available for those in need. One does not have to be a victim to attend. Those unable to attend on July 17 can call to reschedule a private workshop.
For more information, call an Ocala Police Department victim advocate at 352-369-7134.
Susan Latham Carr
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1. General Motors sold a record number of their plug-in hybrid engine Chevy Volts in August. Unfortunately, industry analysts estimate that it costs $89,000 to manufacture each one and that GM is losing, in the long run, $49,000 per unit.
2. President Obama has personally promoted the Volt as a major answer to our energy challenges, ignoring its price, dirty technologies required for its manufacture and operation and the fact that there is a superior technology choice available to consumers right now. Doesn't make the Volt a bad car or a bad choice, but it's not The Answer.
1. You don't have to lecture Americans about how we still have the ability to solve our problems. We know that. That's why the disappointment and bitterness in our leadership has been so great. Americans are festering to roll up their sleeves and begin fixing and solving. They are years ahead of their government.
2. This recurring theme brayed by national Democrats, "Things are Better, You're Just Smart Enough to Perceive It," will probably lose this election. We finally saw bits and pieces of something better and more interesting in the last two nights of the Democratic convention.
1. This will be published during Democratic National Convention week. Let's see how many times anyone within a mile of the microphones mentions "TPP." That's the Trans-Pacific Partnership, an agreement between the U.S. and 10 countries now in the final stages of negotiation. Only the draft agreements are a tightly guarded secret, even though the lives of billions of people could be affected.
2. TPP is being called a "free trade agreement." Actually, there are already very low trade barriers between these countries, which include Australia, Canada, Chile, Japan, New Zealand and Vietnam. By labeling it "free trade," it will automatically receive robotic support from the D.C. establishment and the media.
1. As of the moment I'm writing this, there are 1,784 hours until the first polls close on Election Day. Oh, no, no, no.
2. The official national presidential campaigns alone have spent over $900 million between them, and will spend significantly more than that again in the next 74 days. Averaged out, the cost of each one of those 30-second ad spots for or against a presidential candidate is about $521. Political campaigns across the country are on a pace to spend more than $5 billion on political advertising this year.
Representative and presumptive Vice Presidential nominee Paul Ryan has stated numerous times that his thinking about government and about life in general was greatly shaped by the late novelist and essay writer Ayn Rand. He actually credits her writing and philosophy as the "reason I got involved in public service, by and large…." He gave copies of Atlas Shrugged, Rand's signature novel from 1957, to his Congressional staff as Christmas gifts.
From the giddiness displayed in self-described libertarian circles, it's clear that many people see this as a Romney-Ryan-Rand Republican ticket. During the Republican Presidential primaries, several candidates repeatedly associated themselves with Ayn Rand, especially Representative Ron Paul, who adopted the "Who is Ron Paul?" slogan as a play on the "Who is John Gault?" mantra from Atlas Shrugged.
1. A stunning report issued last week by the Office of the State Comptroller analyzed data from over 4,000 New York local government units, and found over 300 of them had run budget deficits in 2010 or 2011 and over 100 had serious cash flow problems that threatened their ability to pay current bills and obligations. Declining sales tax revenues, property values, state aid and mortgage recording tax revenues have left many local governments "extremely vulnerable to any unanticipated expenditures resulting from emergencies, mandates, or unexpected increases in the costs of goods and services."
2. Many governments have scaled back, particularly in the areas of public safety, health and recreational programs, garbage collection and road projects.
It was technically by mutual agreement, but Nassau Community College President Astrab was separated from the school last week, after two years and much complaining and agitation by faculty members who felt they were not given their traditional input into program changes. Already, there are published threats to turn the campus "into a shark tank" if the next president does not pay proper respect to faculty senate resolutions, or proposes tuition increases to maintain class choices. Two years ago, there were serious allegations of attempted manipulation of the presidential selection process by outside political forces. This time, it can't be just another game.
It isn't scientific at all, but it is telling that the first 119 posts on Newsday's online comment boards about the NCC situation were largely (57 percent) negative toward the college. Just over a third specifically wanted the college closed, referred to it as "welfare," or otherwise questioned why tax dollars go to this. This is definitely a minority view, but those who hold it have learned to make themselves heard. And politicians read this. They fear this.
1. July 20, July 17, July 7, July 2, June 18, June 8, June 4, May 30, May 16. These are the days the postal carrier delivered publicly-funded mail featuring County Executive Ed Mangano. That's only what has arrived since he threatened a $40 million budget cut if legislators didn't approve additional borrowing. On July 13, we learned that Nassau County finished 2011 with a $50.4 million deficit and faces, conservatively, a projected $45 million deficit for 2012. One hundred more county workers were sacked last week, and it's just starters. Yet the brochures, postcards and booklets keep coming, some from the Industrial Development Agency, which doesn't need to mail anything to residents, let alone "Thanks to County Executive Ed Mangano" postcards. Clearly the county executive doesn't do subtlety or nuance. Half the space on the new county prescription discount card, initiated by former County Comptroller Howard Weitzman, is now taken up by Mr. Mangano's picture. It was mailed to hundreds of thousands of families that never asked for another one. Some other public officials are abusers, but given the county circumstances and the timing, scale and seven-figure cost of it, this is way over the top. Incredible!
Bradford County, Pennsylvania, lies along the border with New York, several thousand feet above the gas-infused rock formation called the Marcellus Shale and less than a half-hour drive from the cities of Corning, Elmira and Binghamton. Last week, three Bradford County families reached a $1.6 million settlement with Chesapeake Energy of Oklahoma City ("America's Champion of Natural Gas"), compensation for the ruination of their water wells by methane gas migrations from nearby high volume hydraulic fracturing ("fracking") operations. This is the first time ever that details of a Marcellus Shale settlement have been revealed to the public, at the insistence of the families.
Meanwhile, thousands of residents around the Binghamton area say the unproductive leases they signed with gas drillers several years ago have expired, but the drilling companies are claiming that the leases may be unilaterally renewed because the state's fracking moratorium is a akin to a natural disaster or act of God.
Large sections of Ottawa Airport are now covered by high-definition cameras and wired for sound. The technology "will record conversations" in key areas, such as the primary inspection area for arriving international passengers, according to the official statement. Video and audio will be stored and retained. It's part of the Canadian Border Services Agency plan to keep everyone safe from "organized crime and internal smuggling conspiracies." Border services officers now have expanded powers to question, examine and search airport workers and both domestic and international travelers. Once any kinks are worked out this summer, the airports at Toronto, Montreal and Vancouver go online, and then all border crossings.
These are the Canadians, the "nice" North Americans. Some of their politicians are now funded by the same people who fund some of our politicians.
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Michael Miller is a freelance writer, designer and strategic consultant who has worked in state and local government. Email: email@example.com


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10 Steps to Pick the Right Doctor
Whether you need a primary care doctor or a specialist, these 10 steps will ensure you find the right doctor for you. View Slideshow
Dr. Czyszczon's Experience
Research training, expertise and qualifications
Dr. Czyszczon's Care Philosophy
- Obstetrics & Gynecology
Board Certifications
- Obstetrics & Gynecology
- Colposcopy
- C-Section
- Destruction or Excision of Lesion of Cervix (incl. LEEP)
- Endocervical Curettage
- Fluid Contrast Ultrasound
- Gynecologic Cancer Screening
- Hysterectomy - Laparoscopic
- Hysterectomy - Open
- Hysteroscopy
- Removal of Reproductive Organs (Hysterectomy, Oophorectomy, Salpingectomy, Salpingo-Oophorectomy, Resection of Peritoneal Malignancy)
- Vaginal Birth After Cesarean (VBAC)
- Vaginal Delivery and VBAC
- Breech Position
- Cervical Polyps
- Encounters for High-Risk Pregnancies
- Encounters for Normal Pregnancies
- Endometriosis
- HPV (Human Papillomavirus)
- Hypertension Complicating Pregnancy, Childbirth and Postpartum
- Mastodynia
- Miscarriages
- Noninflammatory Cervical Disorders
- Ovarian Cysts
- Pap Smear Abnormalities
- Perimenopause
- Polycystic Ovarian Syndrome
- Sexually Transmitted Diseases
- Symptomatic Menopause
- Uterine Fibroids
- Vaginitis and-or Vaginosis
- Yeast Infections
Background Check for Dr. Czyszczon
0 Malpractice Claims
- No malpractice history found for Virginia.
- No sanctions history found for the years that Healthgrades collects data.
0 Board Actions
- No board actions found for the years that Healthgrades collects data.
Awards & Recognitions
Education & Training
Medical School
- Virginia Commonwealth University School Of Medicine
Residency Hospital
- Virginia Commonwealth University School Of Medicine
Languages Spoken by Dr. Czyszczon & Staff
- English


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3,556 total episodes
Welcome to AP.com the name shadowds and if you need any help on finding any anime shows or manga to watch/read online or download also if you have any question just ask and i do my best to help you. ^^ How are you? also like your avatar as well. ^^
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As they enter the training circle at Curves, female guests come face-to-face with the smiles of other women. And just as points on a circle share a common distance from the circle's center, workout participants share the experiences of those nearby by trading stations throughout the 30-minute training session. One minute is spent on a piece of strength-training equipment built for feminine frames and designed to work two opposing muscle groups with a single movement. Exercisers then move on to a recovery station, where they run, jog, or dance to maintain heart rates and keep platforms in place during momentary losses of gravity.
When students take a spin class at Any Body Fitness, they know they're pedaling atop sleek, professional-grade cycles. That's because the staff at Any Body Fitness contains more than just certified spin instructors; in fact, staffers' primary task is to scout out and sell top-shelf cardio, strength, and aerobic equipment. The employees outfit everything from modest home gyms to sprawling commercial wellness centers with ellipticals, treadmills, and weightlifting benches. So, when they select the stationary bikes that instructors use to punch up spinners' heart rates, they do so with a solid understanding of the industry. Personal trainers, nutritionists, and active-lifestyle mentors act as equally knowledgeable resources for clients seeking wellness help outside of spin class.
The licensed, friendly trainers and fitness instructors at Exclusive Fitness know that everyone has different fitness goals—some people want to build lean muscle, some want to shed pounds and tone up, and some want to regain mobility after an injury. No matter clients' goals, they can find the guidance they need along with plenty of strength and cardio equipment, unlimited tanning services, and private rooms for group classes.
Anytime Fitness is a modern, upscale gym that's open 24 hours a day, 365 days a year, helping busy clients get fit at the most convenient time for them. Cardio and strength-training equipment, group fitness classes, key-card access, and a friendly staff of personal trainers make this gym a laid-back place to come in and sweat it out at any hour of the day or night.
YMCA of East Tennessee holds fast to its three-fold mission: to encourage healthy living, youth development, and social responsibility. Each of their five locations brims with cardio and weight equipment, as well as digital ActivTrax kiosks, which print out customized workout plans based on each guests' information. Instructors lead group fitness classes for adults and stacks of trench-coat-clad babies disguised as adults, offering sessions that range from kickboxing to water aerobics. In addition to specialized sessions for seniors, they also lead sports programs for kids, such as swimming, basketball, and karate, as well as host a youth-based leader's club.
The folks at YMCA of East Tennessee offer memberships to military families and host programs for kids who have dropped out of school or who have been suspended. Their scholarship program helps families send their kids to the YMCA's fun, safe, character-developing programs no matter their financial circumstances.
The muscle tutors at Fitness Together will work with you to determine your goals (drop pounds, run a marathon, get strong enough to bench press goats) and develop a custom workout plan designed to help you reach your fullest fitness potential. They'll supervise your squats, offer nutritional advice, and push you until you see results. Individual attention means it's all about you: your trainer can point out when you're doing a stretch incorrectly, help you tone trouble zones, and push you to keep going when you'd otherwise quit or become distracted by the fragile beauty of a passing hummingbird.


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Office of Career Development
Mission statement: CORE offers student-centered learning experiences that help students discover their purpose and passions, and connect them to their career aspirations.
Track your level of professional preparation using Augustana's innovative Viking Score. The 2014-2015 incentive program offers students a chance to win business cards and other rewards.
Test out your career interests in a community service position, job, internship or job shadow. Locate opportunities on our Augie Hub database.
Evaluate your resume and credentials, career interests and professional skills through vocational exploration and career counseling.
Locate information on career resources, upcoming events, or one of our publications. Discover companies and organizations that recruit Augustana students
Connect with Augustana alumni for career resources, internships and jobs. Connect with the Quad Cities business community through our Entrepreneurship/EDGE Center.
Understand The Augie Model of Career Development. Learn about our staff and our Career Ambassadors. Review our Professional Development Commitments and Guiding Principles.
Career Development fall 2014 report
This report summarizes the Office of Career Development's innovative portfolio of products and services and highlights some of the department's key accomplishments.
Now, everything has a learning outcomeA college education has become a widespread expectation but many students have little idea of why they're really there. The Chronicle of Higher Education reports on Augustana's vision of how students put together and make sense of the pieces of their education. Augustana has identified nine learning outcomes — like critical thinking and quantitative literacy — that apply to everything students touch: courses, clubs, teams, residence halls.
College introduces two new certificate programsThis fall, Augustana introduced its first two certificate programs: American Culture Exploration, for one-year international students whose academic focus is American life, and Nonprofit Leadership Development. "Certificates are another way to demonstrate a skill set in a portfolio or interview, especially experience, that someone else might not have," said Doug Tschopp, director of the college's Entrepreneurial Center (EDGE).
Forum at Old Main: Measuring student career preparationIn the first installment of the Forum at Old Main video series, Michael Edmondson, associate vice president for career development, and Mark Salisbury, director of institutional research and assessment, discuss the importance of measuring student progress in career preparation while at Augustana.
Video: former CEO Brenda Barnes addresses studentsBrenda Barnes '75, former executive at Pepsico and Sara Lee, visited campus to talk with students about navigating future lives and careers.
Finding a student's callingKristen Glass Perez, one of two campus chaplains at Augustana College, also is working in the college's CORE (Career, Opportunities, Research, and Exploration). She is now the director of vocational exploration, and her goal isn't to just help students find a job or internship. She's trying to help students find their calling.
Symposium alumni panel: identities of your majorAs part of the Fall 2014 Symposium Day, a panel of five alumni shared how they successfully entered into professional fields which, at first glance, may not seem to correspond directly to their major but relate strongly to their interests.


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|Boxing Champions | Boxing Schedule | Boxing Video | Boxing History | Pound For Pound | Lounge | The Wire | Audio | Arcade
Big Bad Booty Daddy
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Comments Thread For: Ricky Hatton Eyes Rex Tso as Potential Future Signing
Former world champion Ricky Hatton says Hong Kong's Rex Tso Sing-yu had "every chance" of being signed by his stable in future but that the young fighter was now only taking "baby steps" towards becoming a world-class fighter.
Hatton was impressed by Tso's 10th-round TKO victory over Timur Shailezov of Kyrgyzstan that earned him the vacant WBC AMCO Asia Continental super flyweight title during a recent main bout in the Road To Glory showpiece at the Hong Kong Convention and Exhibition Centre.
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Happy new years Ricky
Kin yer taste the blood?
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Oh jeez, the first part of that title scared the shit out of me... I thought Hatton was "eyeing" an opponent for a second comeback.
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Lunchtime Legends
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