text:
TC Girls Basketball
Posted in the Hiawassee Forum
Since: Sep 07
#21 Jan 11, 2008
I seem to recall a Taylor girl back in the 90's who scored well over a 1000 points. I think she also made that achievement early in her junior year. Does anyone else remember this?
Also, I think it would be interesting to see who coached more of these thousand point club members. I suspect that Dion Eller had his fair share.
#22 Jan 11, 2008
I do remember her but I cant remember her 1st name she was coached I believe by Melton, the majority of the 1000 point girls were coached by Eller.
Since: Sep 07
#23 Jan 11, 2008
Melton wasn't the coach back then; I think it was Stancil, but don't quote me on that. The team went through a few coaches back then. Hmmm...anyone remember her name and any of the details?
Also, I saw the video on Channel 32's website. There was a blurb about her breaking a record for most points in a game. Does anyone have details on this? Was it a state or school record, and how many points?
Since: Sep 07
#24 Jan 11, 2008
Oh, and I meant to add that I'm rather disappointed with the school's website. There is nothing there on it. That website has been up for years, and it has nothing. No records, no pictures, nothing but schedules. You'd think that either the person they are paying to maintain the site could do that, or enlist the help of some students. You know that the kids probably have more website authoring experience than the faculty these days.
Since: Nov 07
#25 Jan 11, 2008
It might have been Stancil or it could have been Bell. not for sure and Ot I sent you email if you have time to read it.I need some info Thanks
Since: Nov 07
#26 Jan 11, 2008
Rhonda Mcconnell scored 1000 points. In this time frame also.
#27 Jan 11, 2008
very true ive followed some of these girls from rec.ball and meltons really got some great talent coming his way
#28 Jan 11, 2008
Someone mentioned this website, the discussion of Towns County basketball, and my name being mentioned here as a resource at the game on Tuesday night. As a long time scorekeeper, sports writer, and simply someone interested in our teams and players, I have enjoyed following our thousand point scorers, beginning in the mid sixties, including keeping up with the point totals on a yearly basis from the mid sixties to the mid eighties. Following is a list of those with sufficient evidence that they reached this total with others prior to the early to mid sixties likely having done so but with sufficient records not available. The "married" name of the Lady Indians is listed where known as is the last year they played in parenthesis:
Diana Barnard (Hazleton)(1965)
Peggy Berrong (Giles)(1970)
Carol Ina Peebles (Ramsack)(1975)
Martha Moss (Hufstetler)(1979)
Carla Cloer (1981)
Amy Allen Silvey (1986)
Angela Rogers (Kendall)(1986)
Rhonda McConnell (Garrett)(1989)
Ann Dyer (1991)
Sheri Bradshaw (Hardin)(1993)
Keisha Taylor (O'Hearn)(1997)
Julie Walls (Giles)(1998)
Candice Blythe (2000)
Brandy McNabb (2000)
Gina Bradshaw (Ditmore)(2001)
Blair Barrett (2005)
Nikki Winn (Class of 2009)
Bob Bryson (1956)
Terry Gribble (1965)
John Nations (1965)
Eddie Rushton (1975)
Jeff Youngblood (1985)
Robby Williams (1987)
Chet Kendall (1988)
Tony Berrong (1992)
Michael Kimsey (1994)
Jonathan Barrett (1997)
Robbie Elliott (2004)
*Jared Wright (2004)
*Jared Wright scored 115 of his total of 1003 points as a freshman for White County High School before transferring to Towns County for his final three years.
I hope this info is helpful to those who have shown an interest. I have been doing some research for a few weeks now to try and write a few articles related to winning streaks by our teams and scoring excellence as related to career totals and individual game totals.
As for a question as to single game scoring records, it appears almost certain that Nikki Winn's 37 points are a Lady Indian school record under full court rules which have been in effect since the 1976 season. We may never know for sure with a few score books since that time no longer available.
Since: Jan 08
#29 Jan 11, 2008
Jerry....thank you so much for providing this information. I had planned to seek you out at the homecoming game tomorrow night to inquire. I look forward to the articles you will be writing regarding winning streaks.
As far as the first name of the coach named Stancil, it was Robbie. She coached at Union County after leaving Towns, or vice versa....and then she went to South Cobb. I'm not sure where she is now. Her husband is Rick Stancil, the city manager/attorney, if I'm not mistaken.
#30 Jan 13, 2008
TC girls improved their record to 16-2 with their 30 pt. win over Prince Avenue at the Homecomeing game last night with a perfect 6-0 region record. It was announced that the girls are currently ranked 5th in the State. The boys played a great game leading most of the way, but couldn't pull out the win. The boys currenly are 3-3 in the region which is the most region wins since 2005. Keep up the hard work!
#31 Jan 14, 2008
I think the boys are 3-0 in region aren't they? I dont believe they have lost a region game from what I heard Sat night.
#32 Jan 14, 2008
Yea almost all of them are my friends and they are so good. They practice everyday of the week and I barley get to see my best friends. They are so good. The coach works them extra hard and she was a basketball player herself
Since: Nov 07
#33 Jan 14, 2008
Jerry, you are an asset to the community and admired by athletes at TCCS. The last basketball game I attended, I watched as one of the key players ran around the court, looked directly at you and gave you the most beautiful smile I have ever seen! Keep up the great work...you are appreciated!
#34 Jan 14, 2008
As for the 1000 point club thing, remember the 97, 96 days when Jonathan Barrett brought us so much excitement. These were the great days when Cotrill (SP?) was the coach. He is a great coach and now coaches at hayesville, but they had several other players at that time that were good besides barrett.
Since: Jan 08
#35 Jan 14, 2008
Unfortunately the boys are NOT 3-0 in region play. They lost a very close game Saturday to Prince Avenue which is one of their region opponents, and they lost to Lakeview the previous night, also a region opponent. The website ga.prepcountry.com says that the TC boys region record is 2-2, and that they are 3rd in the North part of the region. However, I looked at their schedule, which also posts wins/losses and scores and there are at least two other games, one win and one loss that I believe are Region games so I think their region record is actually 3-3, but that would still have them tied for 3rd in 8A-North. While these young men don't have the wins that their Lady Indian counterparts do, I will have to say that their game against Prince Avenue on Saturday night was a good game; they played hard and with one or two calls going their way, it could easily have been a win. They have come a very long way this year, and first year Indian coach Ryan Potts is to be commended for a job well done. The guys are a young team with only 3 seniors listed on the roster, so there are good things to come down the line for the Indians as I know there is some talent on the JV and on the middle school team that will be heading Coach Potts way soon.
#36 Jan 15, 2008
I believe that the boys only have 1 Senior, Tyler Garrett. If I'm correct, they usually start 1 Senior, 2 Juniors, and 2 Sophomores. They are very young and I have to agree that Potts is running a good program and it is easy to see that these guys have made great improvements throughout the year.
#37 Jan 15, 2008
I think you are right, Garrett is the only Senior. They have 3 Juniors who see a lot of playing time, Gribble;Ellis;and Page; and I believe the rest are Sophmores.
#38 Jan 15, 2008
Practice makes perfect the TC Middle School Lady Indians have gone thru some hard times this season with several being injured, but they seem to rise above.
Since: Jan 08
#39 Jan 15, 2008
I don't know all the boys on the team, but I was looking at their roster as listed on the www.ga.prepcountry.com website and there are 3 seniors listed; Tyler Garrett, Sam Clay and Matt Clark. I do know Sam, and I know he was at the game Saturday night and was crowned Homecoming King if I'm not mistaken. I don't know if he's playing basketball or not, but I do know he was at the first practice the night after the last football game. I don't know Matt Clark, so I'm unsure about his status as well. I do know Tyler and knew that he's one of the starting five. With all that said, whether the number of Seniors is one, two or three....we still agree that the majority of the team is young and improving every game....and Coach Potts DEFINITELY has them headed in the right direction.
On another note....the middle school girls won again this afternoon, absolutely taking apart the Woody Gap girls team, winning by a score of 51 - 10. Coach Nelson only started one of the "regular" starting five, and gave the girls who don't normally get as much playing time an opportunity to show what they can do...and I have to say that every girl on the team showed her stuff today. They were awesome. There was no boys game even though one was originally scheduled, because a large number of the WG boys were sick and they didn't have enough "well" players to put on the court. Both middle school teams play again this coming Saturday morning at 11AM. Come on out and support these young Indians!
#40 Jan 16, 2008
Sam and Matt are not on the team anymore I'm sad to say Matt was a fairly decent player. Yes the middle school girls really plowed down Woody Gap but you are correct the girls who dont normally play did get a chance to show that they practice and play just as hard as the other girls who normally start or play next year they will be losing seven 8th graders so next year the girls dont normally play that try out for the team again will really have a chance to shine and not to mention the three 6th graders on this years team are all exceptional players and have really added to this team so Coach Nelson's future for the next two years looks very good.
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Loaded Mashed Potatoes
Total Time
Prep 20 mins
Cook 40 mins
This one is popular. It has everything and then some. Not something for the calorie conscious! I've used instant potatoes, but of course fresh is best. Good for the holidays.
Ingredients Nutrition
- 1419.54 ml prepared mashed potatoes
- 118.29 ml milk
- 226.79 g package cream cheese
- 236.59 ml sour cream
- 9.85 ml parsley flakes
- 4.92 ml garlic salt
- 236.59 ml shredded cheddar cheese
- 226.79 g bacon, cooked and crumbled
- Heat oven to 350°.
- Mix first six ingredients in mixer on medium speed until smooth and creamy.
- Spoon into a greased 9x13-inch pan or casserole dish and sprinkle with cheese and bacon.
- Cover with foil and bake for 30 minutes.
Most Helpful
These were delish! I added some scallions on the top as well.
can't wait to make this withour leftover mashed potatoes
awesome taste and easy


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text:
|Publication number
|Publication type
|Application number
|Publication date
|Dec 5, 2000
|Filing date
|Apr 13, 1998
|Priority date
|Apr 13, 1998
|Fee status
|Publication number
|Robert Alan Hamm, Rose Fasano Kopf, Robert William Ryan
|Original Assignee
|Lucent Technologies Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (6), Referenced by (26), Classifications (21), Legal Events (8)
|External Links: USPTO, USPTO Assignment, Espacenet
This invention relates to lithographic methods for defining metallization patterns using lift-off techniques.
Lift-off processes are well known in semiconductor device manufacturing. They were used early in silicon LSI processing until etch processes became the techniques of choice for VLSI technology. Etch processes can provide high definition patterns if the etch selectivity between the material being etched and other exposed materials is high. Etch techniques have been developed in silicon technology that provide good etch selectivity for the material systems of interest, but acceptable etch selectivity in III-V processing has been difficult to obtain. Accordingly, lift-off patterning techniques are used in critical patterning steps in the manufacture of many Ill-V devices.
In III-V device technology, the surface topography is typically severe. Vertical steps may be comparable in dimension to the spacing between features being defined. This is partly attributable to the fact that bipolar transistors are prominently used in III-V integrated circuits, and bipolar devices typically have mesa structures. Due to this factor multi-level resists, with at least one planarizing level, are typically used for lift-off in III-V IC processing.
Because surface topography in III-V device technology is so severe, edge definition becomes a critical issue. If the aspect ratio (height to width) of features being defined is large, variations in edge definition, which can be comparable in size to the feature thickness, may span the spacing between features. If that occurs, shorts result.
Much effort has gone into development of bilayer and trilayer resist schemes to overcome these problems. Bilayer processes involve a dual resist scheme, with a thick underlying resist for planarizing the structure, followed by another type of resist or contrast enhancement layer. The upper resist layer typically forms an overhang on top which is a common feature of multilayer resist processes. The overhang creates a positive discontinuity between regions of the deposited metallization layer as it steps from one level to another. The discontinuity insures lift-off of the metal deposited on the upper level of the multilevel resist.
Two layer resist schemes have drawbacks, often caused by mixing of the resist materials, thereby impairing edge definition and making it difficult to obtain a uniform overhang over large areas. See S. Zhang, et al, 4th International Conference on Solid-state and Integrated Circuit Technology, Proceedings (Cat. No. 95TH8143), G L Baldwin, Z Li, C C Tsai, and J. Zhang, ed. New York, N.Y. IEEE p. 41-43 (1995). In addition, some two layer processes use chlorobenzene, a hazardous and environmentally undesirable material. See R. Williams, Gallium Arsenide Processing Techniques (Artech House, Dedham, Mass., 1984), and P Kalee Prasad and J Narain, "Improved Lift-off Techniques for Thick Aluminum Metallization", Semiconductor Devices (Proc. SPIE Vol. 2733), K Lai, ed (Narosa Publishing House, New Delhi, India) 499 (1995).
Three layer resist processes avoid the resist mixing problem by using an intermediate transfer layer to segregate the resist layers. See for example, "Lift-Off Process for Achieving Fine-Line Mettalization", A A Milgram, J. Vac. Sci. Technol. B1 (2), 490 (1983); "Trilayer Lift-Off Metallization Process Using Low Temperature Deposited SiNx ", J R Lothian, F Ren, S J Pearton, U K Chakrabarti, C R Abernathy and A Katz, J. Vac. Sci. Technol. B10 (6), 2361 (1992); S P Lyman, J L Jackel and P L Liu, "Lift-off of Thick Metal Layers Using Multilayer Resist", J. Vac. Sci. Technol. 19 (4), 1325 (1981). But trilayer resist processes also have drawbacks. Some of the techniques described in the references cited above use a Ge transfer layer. Ge transfer layers obscure wafer alignment marks, thus limiting the use of stepper based technology. Ge is also difficult to see through when using contact lithography. Moreover, many trilayer techniques involve the use of thick planarizing layers as the first layer, which may not be compatible with the solvent systems used with resists such as polymethylglutarimide (PMGI).
We have developed a three layer lift-of process that produces outstanding edge definition, and does not suffer from the problems outlined above. The three layers are two resist layers separated by a transfer layer with the approximate composition SiO2.
FIG. 1 is a schematic diagram of a Double Heterostructure Bipolar Transistor (DHBT) device fabricated using the technique of the invention; and
FIGS. 2,3,4,5,6,7,8 and 9 are schematic views representing steps in the lift-off process of the invention as applied to the device of FIG. 1.
The lithographic lift-off technique of the invention will be described in the context of a process for the fabrication of III-V DHBT devices. However, it will to be appreciated by those skilled in the art that the lift-off technique has broad application to semiconductor device fabrication, and especially to III-V multilayer heterostructure devices with severe topological features, e.g. mesa structures.
Referring to FIG. 1, a completed DHBT device 11 of the kind for which the process of the invention is particularly intended is shown. The device has a multilayer semiconductor heterostructure stack which is shown here with seven semiconductor layers 12-18. The multilayer stack may be grown by Metal-Organic Molecular Beam Epitaxy (MO-MBE) using standard growth techniques known in the art. A general description of the MO-MBE process can be found in M. B. Panish and H. Temkin, "Gas Source Molecular Beam Epitaxy", Chapter 4, Springer Series in Materials Science, Vol. 26, Springer-Verlag 1993, which is incorporated herein by reference for details of the process. The MBE growth technique is ideal for making heterostructures because very complex multilayer stacks can be produced in a substrate wafer in a series of sequential growth steps in a vacuum apparatus without breaking the vacuum and handling the wafer. Thus all of the layers in the stack are completed before the device fabrication sequence begins.
Referring to FIG. 1, the substrate layer 25 is semi-insulating InP on which the series of semiconductor layers 12-18 are sequentially grown. Some of these layers comprise a sub-series of graded layers as will be described. However, for clarity and simplicity in the description only the seven functional layers are shown. In the context of processing the multilayer stack, the layers that comprise graded sub-layers are processed as if they were a single layer.
The first grown layer 12 is a 4000 Angstrom In0.53 Ga0.47 As subcollector layer doped n+ with a dopant concentration of 3�1019 cm-3. The n-type dopant used in this process was Sn, although other n-type impurities such as Si can be used. The subcollector layer 12 also includes buffer layers to prevent updiffusion of impurities in the multilayer structure. The buffer layers comprise a 200 Å In0.53 Ga0.47 As, n-doped at a level of 1�1018 cm-3, and a 20 Å undoped In0.53 Ga0.47 As layer. The collector layer 13 is a 5000 Å layer of n-InP doped to a concentration of 3�1016 cm-3.
In the heterostructure transistor described here, both the emitter-base and collector-base regions are graded using graded quaternary InGaAsP layers. The graded quaternary layers separating the collector and base is shown at 14, and comprise a 130 Å InGaAsP (1.13 eV) layer, and a 130 Å InGaAsP (0.95 eV) layer. The quaternary layers had a doping level of 1�1017 cm-3. Buffer layers comprising a 300 Å In0.53 Ga0.47 As layer n-doped to 1�1017 cm-3, and a 200 Å undoped In0.53 Ga0.47 As layer, separate the graded layer 14 from the base layer 15. The base layer 15 is 900 Å of In0.53 Ga0.47 As doped to a concentration of 3�1019 cm-3 with carbon. The emitter side of the base also has a quaternary graded layer 16, made Up of a 70 Å of InGaAsP (0.95 eV) layer, and a 70 Å InGaAsP (1.13 eV) layer. The emitter layer 17 is 500 Å of InP n-doped to a concentration of 5�1017 cm-3. The top semiconductor layer 18 is a contact layer consisting of 2500 Å of In0.53 Ga0.47 As doped n-type with a concentration of 3�10.sup. cm-3.
A metal contact 19 is selectively applied to the top semiconductor contact layer 18 by a lift-off technique. The metal contact 19 is 100 Å Pd+200 Å Pt+1000 Å Au, and during fabrication serves as an etch mask in a self-aligning mode. The lateral dimensions of the metal layer are approximately 3�5 μm. The top semiconductor contact layer 18 is etched using the metal contact layer 19 as an etch mask. A wet etchant is used. An overetch is performed to obtain an undercut of 5000 Å under the metal contact, leaving an area of approximately 2�4 μm in InGaAs contact layer 18. This patterned contact 18 then serves as the etch mask for the emitter layer 17. The InP emitter layer is then wet etched. The base contact 21 is applied by evaporating 100 Å Pd+200 Å Pt+800 Å Au using the metal contact 19 as a shadow mask to define the inner edge of the base contact. The metal base contact layer also deposits on the metal emitter contact 19 as shown. Metallization for layer 21 is deposited using a lift-off process, which defines the outer edges of the base contacts.
The structure is then encapsulated and the encapsulant patterned to define the base-collector mesa. The encapsulant is applied by spinning Accuglass™ 211 at 2000 RPM onto the surface to produce a 0.26 μm layer of polymer encapsulant, and curing the polymer by heating to 300� C. for 10 min. During curing of the spin-on polymer the metal base contact is annealed sufficiently to make ohmic contact through the thin quaternary graded layer 16 to the base layer 15.
The exposed portions of the graded quaternary layer 16 for the emitter-base region, the base layer 15, the graded quaternary layer 14 for the base-collector region, and approximately half the thickness of the collector layer 13, are all sequentially ECR plasma etched using BCl3 /N2. The remaining thickness of collector layer 13 is selectively wet etched, and overetched to produce a substantial, e.g. 2 μm, undercut as shown in FIG. 1. This undercut serves to reduce the collector-base capacitance of the device.
The use of both wet and dry etching in the process allows the advantages of both techniques to be realized. Plasma etching is convenient, and wet etching is rapid and more selective. Moreover, using a wet etch following a plasma etch tends to remove surface damage caused by plasma exposure. The plasma etch steps in this work used ECR plasma processing in a Plasma-Therm SLR 770 system. Etching is performed at room temperature, at a bias of -80V d.c., a μ-wave power of 250 W, and a pressure of 2 mTorr. Flow rates in sccm are 12 BCl3 +3 N2. Plasma etch rates are about 150 Å/min for this etch chemistry. Selective wet etching is performed at 4� C. with 1:1:15 H3 PO4 :H2 O2 :H2 O, for InGaAs and 1:1:1 HCl:H3 PO4 :H2 O, for InP. Etch rates are 1000 Å/min and 800 Å/min, respectively.
The collector contact layer 12 is then patterned leaving an edge portion thereof accessible for the deposition of collector contacts 23 as shown in FIG. 1. The collector contact is 100 Å Pd+200 Å Pt+7000 Å Au. The finished mesa structure is then passivated and encapsulated with a common layer 24, i.e. a polymer encapsulant. Due to the thickness required to cover the mesa and the emitter and base contacts, i.e 1 μm, the encapsulant may be applied in two steps.
The device structure is completed by plasma etching via holes through encapsulant layer 24 to the collector, base and emitter metallization respectively, and evaporating metal contacts 26 into the via holes as shown.
The above described process typically uses three lift-off metallization steps, one to define the emitter contact, another to form the base contacts, and a third to form the collector contacts. For the purpose of this description, just one of these steps--deposition and patterning of the metallization for the base contacts--will be illustrated. The point in the fabrication sequence where this metallization step occurs is after patterning of the emitter layer 17, which exposes the emitter/base buffer layer 16 as shown in FIG. 2. At this point the three level resist of the invention is applied. FIG. 2 shows the first level 31 of the three levels, which is blanket deposited over the emitter mesa and the exposed buffer layer. Level 31 is a layer of standard photoresist such as AZ5209 or AZ4210. The developer used with this resist is also standard, e.g. AZ developer. The resist is spun on in the conventional manner and oven baked at 90�C. for 30 minutes.
The thickness of the first level will vary depending on the metallization step. For example, in the first lift-off step, used to define the emitter contact, the first level may be relatively thin, since the metal layer thickness is typically lo substantially less than 1 μm and there is essentially no topography at this stage in the process. Later metallization layers are applied over substantial topography, and the metallization itself is typically thicker, i.e. of the order of 1 μm. Accordingly, for the lift-off step illustrated in the figures, the first level 31 is typically 2-5 μm.
The second or intermediate level 32 of the trilevel resist is SiO2 with a thickness substantially less than the thickness of the first level 31, i.e. within the range 700-1300 Å. The SiO2 layer, shown at 32 in FIG. 3, is evaporated using conventional techniques. The films evaluated in the work described here were evaporated using an Airco-Temescal e-beam evaporator at a gun bias of 10 KeV, a base pressure of 1�10-7 Torr, and a deposition rate of 2 to 6 Å/s. The film compositions were determined by Auger spectroscopy in a Perkin Elmer PHI610 Scanning Auger Microprobe at a bias of 5 KeV. Thickness measurements were performed by stylus profilometry using a DEKTAK 3030ST.
After deposition of the SiO2 intermediate layer, the third level 33 of the trilevel resist is deposited as shown in FIG. 4. The thickness of the third level is sufficient to etch the desired pattern in the second level 32, i.e. typically 0.5-3 μm, and preferably 0.7-1.5 μm.
The upper resist level 33 is then exposed, and developed, forming the desired pattern with the outer edges of the base contacts as indicated at 35 in FIG. 5. The patterned layer is oven baked 30 min at 90�C. Using the patterned resist 33 as a mask, the SiO2 layer 32 is plasma etched at room temperature in a Micro-RIE parallel plate etching system to produce the structure shown in FIG. 6 with the lithographic pattern in the upper resist layer transferred to the intermediate SiO2 layer.
The plasma etching procedures described here are well known in the art and a variety of process parameters can be used to obtain the desired results. For example, for the SiO2 layer etch a CF4 /O2 plasma at 50 W and 250 mTorr can be used. A 50% overetch after end point is used to ensure clearing. Portions of the resist layer 31 exposed after etching the SiO2 layer 32 are removed as shown in FIG. 7 by flood exposure, and then plasma etching with an O2 plasma. The O2 plasma etch is standard, e.g. 50 W and 250 mTorr, and a resist removal rate of ˜1000 Å/min. A subsequent undercut of the lower resist level of 0.5 μm to 1 μm is obtained by a wet etch using spray developer. Since the intermediate SiO2 layer is not etched in the O2 plasma or the resist developers used to pattern layer 31, and to undercut layer 33, precise feature definition is retained.
After patterning of the trilevel resist layer, metallization layer is blanket deposited over the resist pattern as shown in FIG. 8. The metallization deposits in a discontinuous layer, i.e. portions 21 as shown, due to the substantial vertical steps between the features on the substrate surface. The undercut in emitter layer 17 and emitter contact layer 18 also aids in ensuring that base metal contacts 21 are spaced from the unwanted portions 33 of the lift-off metallization layer.
The lift-off metallization layer may be any suitable conductive material. In the technology described in detail here the base contact is Pd/Pt/Au and the metallization for interconnect levels is Ti/Pt/Au. The thickness of the layer is typically 0.1-1 μm.
The trilevel resist is then removed with a standard resist solvent such as acetone using a 30 min soak and gentle spray rinse. While the silica intermediate level is not readily soluble in resist solvents, it lifts off on dissolution of the lower and upper polymer resist layers. The unwanted portions 33 of the metallization layer lifts off simultaneously. The structure after lift-off is shown in FIG. 9, which is the intermediate stage of processing the device of FIG. 1 mentioned earlier.
The important feature of the trilevel resist technique of the invention is the intermediate SiO2 layer. Therefore the composition, plasma etching characteristics, and stress levels, of this layer were thoroughly analyzed. Auger analysis was used to determine composition, and stress measurements were performed using a Frontier Semiconductor Measurements Inc., FSM8800.
The compositions of the intermediate layer were nominally SiO2 but were slightly off stoichiometry. The film composition is dependent on the crucible charge. Two silica crucible charges were used for these evaluations, Vycor™ and fused silica. The composition of Vycor by mol % is 32% Si+64% O2 +1% Al+3% B. The silica crucible composition was essentially stoichiometric i.e. 33.3% Si, 66.7% O. The compositions in the evaporated films were somewhat oxygen rich. The Vycor charge produced a film composition of 27% Si+70% O2 +2% Al+1% B. The silica charge produced films of 31% Si+69% O. However, using this evaporation technique the film compositions from sample to sample or layer to layer were very consistent. It is evident from the stoichiometric variations from source to substrate that oxygen in the source will become depleted after several depositions. Consequently, consistency of the process is improved if the source material is changed frequently, preferably after each deposition.
It was found that even though the two compositions just described are very similar, the Vycor composition is easier to deposit since it out-gases less during initial warm up and during deposition. This allows a lower system pressure during deposition, i.e. 2�10-7 Torr for Vycor, compared with 2�10-6 Torr for SiO2. Plasma etch rates are similar for both materials, 540 Å/min and 640 Å/min for Vycor and SiO2 respectively.
Stress in the films is determined by comparing the wafer bow, or radius of curvature, before and after SiO2 deposition, using the relationship
σ=Eh2 /(1-ν)6Rt
where σ is the stress in dynes/cm2, E is Young's modulus, h is the substrate thickness, ν is Poisson's ratio, t is the film thickness, and R is the radius of curvature of the substrate.
The thickness of the SiO2 film was found to be important to the success of the process. It has to be thick enough to hold the pattern without breaking off when the underlying resist is undercut, and also thin enough to retain dimensional stability. However, if the film is too thick excessive stresses develop and the film will warp or crack during patterning. The threshold stress for the onset of problems with the SiO2 intermediate level is of the order of 1-2�109 dynes/cm2 compressive, which corresponds to an approximate thickness range of 800-1200 Å. The Vycor films have approximately 30% less stress than the nominal silica films for the same thickness. Films thinner than 700 Å tend to crack in the spray development step used to form the undercut. Films thicker than 1300 Å tend to warp during patterning.
To evaluate the merits of the choice of silica deposition techniques, films produced according to the foregoing procedures were compared with films produced by plasma enhanced chemical vapor deposition (PE-CVD). Films with nominal SiO2 composition were PE-CVD deposited at low temperature, i.e. 50� C. These films were deposited at an RF frequency of 13.86 MHz and a power of 60 W, in a chamber at 500 mTorr, using 400 sccm of 2%SiH4 in N2 and 1800 sccm of N2 O. Although the PE-CVD SiO2 can be patterned and etched, the lower resist level is hardened by exposure to UV radiation from the plasma. This hardening renders the film essentially insoluble in the spray developer used to produce the undercut.
SEM cross sections used to evaluate the procedures described here showed extremely clean edges on the deposited metal, especially at the outer edges of contacts 21 (FIG. 8). This is attributable in part to the high resolution openings formed during patterning of the trilevel resist due to the SiO2 layer 32. Use of the lift-off technique of the invention results in fewer shorts and other interconnect defects in finished electrical devices, and thus improves yields and lowers device costs.
An advantage of the invention is that the resist materials that comprise two of the three layers of the trilevel resist are standard and are processed using conventional steps and materials. The resist materials can be known photoresists, e-beam resists, x-ray resists, or ion beam resists, depending on the choice of method used to expose the top layer of the trilevel resist. These resist materials are typically polymer materials that can be patterned by crosslinking that is stimulated by least one of the known forms of actinic radiation. For effective lift-off processes they are soluble in a liquid solvent. For the purpose of definition materials that have the foregoing properties are termed "lift-off resists".
It will occur to those skilled in the art that while it is important for the top resist layer to be patterned by a lithographic technique the lithographic properties of the bottom resist layer may be less important. The bottom layer can be patterned by flood exposure using the intermediate layer as a mask and developing as indicated above. Under some circumstances, and with suitable polymer materials, the bottom layer can be patterned by etching directly without actinic exposure. Another alternative is to crosslink the first resist layer by flood exposure before the intermediate layer is deposited. However, the creation of a significant undercut in the bottom resist layer is a useful expedient, and is conveniently achieved using liquid developer. In this case it is desirable to use the preferred sequence as detailed above, i.e. to lithographically pattern the bottom layer, which allows the exposed material to be plasma etched, and the unexposed material to be easily removed by developer to produce the undercut.
As mentioned earlier, the SiO2 layer which forms an important aspect of the trilevel resist technique of the invention is nominally SiO2 but may vary somewhat from the stoichiometric composition. Thus as defined herein materials useful for the intermediate layer comprise silicon oxide with the formula SiOx, where x is in the range 1.8-3.0, and preferably 2.0-2.7. These values define the composition of the deposited film. The source composition may be slightly different.
Various additional modifications of this invention will occur to those skilled in the art. All deviations from the specific teachings of this specification that basically rely on the principles and their equivalents through which the art has been advanced are properly considered within the scope of the invention as described and claimed.
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|International Business Machines Corporation
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|Self-aligned thin-film transistor constructed using lift-off technique
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|Multilayer resist structure, and method of manufacturing three-dimensional microstructure with use thereof
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|Brewer Science Inc.
|Developer-soluble metal alkoxide coatings for microelectronic applications
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|Magnetoresistive sensors having submicron track widths and method of making
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|Mems Optical, Inc.
|Method of making multilevel MEMS structures
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|Developer-soluble materials and methods of using the same in via-first dual damascene applications
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|On-track process for patterning hardmask by multiple dark field exposures
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|Jan 28, 2014
|The Regents Of The University Of California
|Multi-rate resist method to form organic TFT contact and contacts formed by same
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|Feb 5, 2004
|Harchanko John S.
|Method of making multilevel MEMS structures
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|Jul 7, 2005
|Mandar Bhave
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|Dec 15, 2005
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|Tokyo Electon Limited
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|James Crawford Bange
|Low thermal expansion doped fused silica crucibles
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|Fujitsu Limited
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|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Apr 13, 1998
Owner name: LUCENT TECHNOLOGIES INC., NEW JERSEY
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|Publication number
|Publication type
|Application number
|Publication date
|May 4, 2004
|Filing date
|Mar 28, 2002
|Priority date
|Mar 28, 2001
|Fee status
|Also published as
|Publication number
|Burns P. Phillips
|Original Assignee
|Burns P. Phillips
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (12), Referenced by (25), Classifications (12), Legal Events (5)
|External Links: USPTO, USPTO Assignment, Espacenet
This application claims the benefit of U.S. Provisional Patent Application No. 60/279,395 filed Mar. 28, 2001.
The present invention relates to a multi-position ratchet mechanism for holding a surgical retractor blade and, more particularly to a quick-release ratchet mechanism which permits the retractor blade to be tilted and rotated into the wound so that the organ may be retracted and lifted at the same time.
A surgical retraction systems is described in U.S. Pat. No. 4,254,763. This patent, incorporated by reference, describes the ability to utilize a retractor ring to retract organs in the plane of the ring.
An improvement for use with the ring of U.S. Pat. No. 4,354,763 was disclosed in U.S. Pat. No. 4,424,724. The '724 Patent, also incorporated by reference, discloses a multi-position ratchet mechanism for holding a surgical retractor blade allowing the blade to be pivoted into the wound from a ring and retracted at the same time. This device allowed the retractor to be tilted, or pivoted, into the wound and retracted with one motion.
The ratchet mechanism of the '724 patent only allows for pivoting in a single plane about the ratcheting mechanism perpendicularly to the ring to which the mechanism is secured. A need exists for rotation in other planes as well, preferably in a plane substantially perpendicular to the plane of the operation of the ratcheting mechanism, i.e., the plane of pivoting, or the plane of the ring.
Furthermore, the ratchet mechanism of the '724 patent is not believed to adequately secure the retractor to the ring. Specifically, the ratchet holder relies on tension of the retractor blade to pull the holder forward so that the edge of a dowel pin engages indentations of the ring to prevent the circumferential sliding of the ratchet holder and to prevent the ratchet holder from falling off the ring. However, there are instances when this necessary tension may not be present or adequate and the ratchet holder would have little, if any, resistance to prevent coming off the ring. Furthermore, torque applied to the ratchet holder may also cause problems. Accordingly, a need exists to restrain the ratchet holder from moving away off of the ring.
The multi-position ratchet mechanism of the preferred embodiment provides a multi-position ratchet mechanism for holding the retractor blade for permitting it to be pivoted into a wound and retracted at the same time which may be thought to simulate the natural "toe-in" method of retraction one could achieve with the hand. The mechanism of the present invention also permits the position of the ratchet mechanism to be moved circumferentially about the support ring and allow for rotation about the selected position relative to the support ring. Furthermore the ratchet mechanism is preferably configured to securely connect with the support ring.
The multi-position ratchet mechanism includes a ring holder, which is mounted onto the support ring, such as an oval support ring. Selective positioning of the ratchet holder relative to the ring may be achieved through the use of a transverse slot in the ratchet holder which receives a thickness of the ring therein. A retention mechanism is utilized to prevent the ring from inadvertently coming out of the transverse slot.
The retention mechanism restrains the ring in the transverse slot of the ring holder. Specifically, the ring typically has a width which terminates proximate to the end transverse slot when the ring is installed in the transverse slot. The retention mechanism is moved into position to prevent movement of the ring out of the transverse slot. In the preferred embodiment, the retention mechanism is pivoted in and out of position with a lever.
The multi-position ratchet also preferably includes the ability to rotate relative to the ring as well as the ability to be secured in a fixed radial orientation relative to the ring upon rotation to a desired angle. Opposing serrated washers which cooperate to resist rotation when engaged maybe utilized. The serrated washers maybe engaged or disengaged utilizing a cam, or otherwise.
The particular features and advantages of the invention as well as other objects will become apparent from the following description taken in connection with the accompanying drawings in which:
FIG. 1 shows a top elevational view of the multi-position ratchet mechanism of the present invention;
FIG. 2 shows a top elevational view of the multi-position ratchet mechanism of FIG. 1 connected to a retractor stem and a ring, and showing both horizontal and vertical plane rotation; operation of the cam actuator is shown in phantom;
FIG. 3 shows a partially exploded perspective view of the mechanism of FIG. 1;
FIG. 4 shows a top elevational view of the mechanism of FIG. 1 showing vertical plane rotation;
FIG. 5 shows an exploded cutaway top elevational view of an alternative embodiment of a portion of a locking mechanism utilized in a ring holder; and
FIG. 6 shows a side cross sectional view of the alternative embodiment of FIG. 5 in use.
The multi-position ratchet mechanism 10 of FIGS. 1-4 maybe utilized in place of the mechanisms illustrated in FIG. 1 of U.S. Pat. No. 4,424,724. However, the multi-position ratchet mechanism 10 of the presently preferred embodiment is believed to improve on the basic design of the prior art ratchet mechanism.
The ratchet mechanism 10 has a ring holder 12 connected to a retractor holder 14. The retractor holder 14 may be pivoted up and down to place a retractor blade (not shown) at a desired depth. Furthermore, the ring holder 12 may be rotated relative to the ratchet holder 14. Specifically, the illustrated ring holder 12 rotates about axle 15 shown in FIG. 3. A pair of opposing washers 16, 18 oppose one another, and in a first configuration are spaced from one another, and in a second configuration contact one another as described in more detail below. The washer 16 may be press fit into well 13 as illustrated in FIG. 3. Washer 18 may similarly be connected to base 26.
In FIGS. 1, 2 and 4 the rotational element is located in the first configuration. The washers 16,18 have serrations 20,22 on opposing faces (as illustrated in FIG. 3) which cooperate to prevent the ring holder 12 from rotating relative to the retractor holder 14 when in the second configuration shown in phantom in FIG. 2. In FIGS. 1,2, and 4 the washers 16,18 are spaced apart from one another a sufficient distance to allow the retractor holder 14 to rotate about the axle 15 relative to the ring holder 12. A spring 24 may be utilized to preferentially maintain the washers 16,18 in either the first or the second position. In the preferred embodiment, the washers 16, 18 are biased in the first configuration. When the radial alignment of the retractor holder 14 relative to the ring holder 12 is to be changed, the operator moves the washers 16,18 apart to the first configuration such as by locating the cam actuator 17 as illustrated in FIGS. 1 and 4, and in solid line in FIG. 2. The retractor 14 may then be rotated relative to the ring holder 12 about the axle 15. The operator may then move the washers 16,18 into contact with another to allow the serrations 20, 22 to cooperate as illustrated to the second configuration by rotating the cam actuator 17 about clamping pivot 19 as shown in phantom in FIG. 2.
If the spring biases the washers 16,18 into the second position in other embodiments, it may be desirable to allow for the radial alignment of the retractor holder 14 relative to the ring holder 12 to be selected in another manner. Specifically, the operator may pull the washers 16,18 apart, and rotate to the desired position, and then allow the spring to pull the washers 16,18 back together.
The mechanics of the rotation and locking about the axle 15 may best be understood by referring to FIG. 3. The clamping pivot 19 is illustrated as parallel to the axle 15. The axle 15 contains groove 21 which preferably has a groove surface 23 parallel to groove surface 25. The groove surfaces 23,25 are in planes, perpendicular to the axis of the axle 15. The axis of the axle 15 may also be referred to as a rotation axis. The axle 15 is also connected to or comprised of spring member 24. The base 26 is placed over the axle 15 with groove 21 accessible through slot 27. The cam actuator 17 is then placed so that cam surface 29 and clamping pivot 19 extend into the slot where the cam surface 29 is operable with the groove 21. The clamping pivot 19 is then secured with a retaining member such as Add a pin 11 shown in FIG. 2. As the cam actuator 17 is moved as shown in FIG. 2 (in phantom), the cam surface 29 acts against the groove surface 25 causing the bottom surface 31 to exert a downward force against the slot bottom 33 and to force the washers 16,18 together in the second, or locked, configuration. Movement of the cam actuator 17 in the opposite direction releases the force. A spring member 24 may assist in separating the washers 16,18. Accordingly, the spring member 24 biases the rotational element in the first configuration.
In other embodiments, the rotational element may not be biased in either of the first or second configurations, or the rotational element maybe biased in the second configuration. Furthermore, in other embodiments, the rotational element may not have a second configuration, and remain in the first configuration allowing the retractor holder 14 to instantly rotate relative to the ring holder 12 without releasing a locking mechanism.
In the preferred embodiment, one of the opposing washers 16 is connected to the ring holder 12 at a top surface of the ring holder 12 and the other washer 18 is connected to a base 26. The base 26 also preferably includes a toothed hub 28 which assists the retractor holder 14 in being pivotally positioned relative to the ring holder 12. The toothed hub 28 is press fit into the base 26. The base 26 has a base pivot 30 which connects the retractor holder 14 to the base 26 while providing a pivot point for directing the blade of a retractor (not shown) to a specific depth in an opening. The toothed hub 28 fits within passage 37 in the retractor holder 14 and assists in selecting a pivot angle of the retractor holder 14 relative to the base 26.
The retractor holder 14 preferably includes a lock mechanism 32 which is moveable between a locking position and an unlocked position. In the locking position at least one grip 34 engages the toothed hub 28 to provide a desired angular position of pivot of the retractor holder 14 relative to the ring holder 12. An actuation lever 76 may be utilized to pivot the grip 34 in and out of engagement with a portion of the toothed hub 28 about pivot 78. A spring is preferably utilized to bias the locking mechanism 32 in locking engagement with the toothed hub 28 as shown in FIG. 4. The retractor holder 14 also preferably contains a rectangular bore 36 for receiving the stem 38 of a retractor blade as shown in FIGS. 2 and 4. The retractor stem 38 may be held in fixed relation to the retractor holder 14 by the pawl blade 40 of the pawl 42. The pawl 42 is preferably spring biased to engage the retractor stem 38 by a spring. The pawl 42 has an actuation lever 80 which pivots about pivot 82 to engage and disengage the pawl blade 40.
In addition for allowing for rotation of the retractor holder 14 relative to the ring holder 12, the preferred embodiment also employs a ring holder 12 which secures the mechanism 10 to the ring 46 with a retention mechanism 48 as shown in FIGS. 1-3. The retention mechanism 48 is preferably actuated by a lever 50 which is spring biased to retain the ring 46 within a transverse slot 54. Although the preferred embodiment has a retention mechanism 48 attached to a lever 50 for retaining an end 56 of the width of the ring 46 within the transverse slot 54, other locations along the width of the ring 46 could also be retained by a retention mechanism 48. Furthermore, the retention mechanism 48 need not necessarily be equipped with a release lever 50 in all embodiments. The retention mechanism 48 may also include one or more surfaces in the transverse slot 54, such as opposing slot surfaces, which move to secure the ring 46 in the slot 54.
The retention mechanism 48 illustrated rotates about retention pivot 60 and is preferably spring biased in the retaining position shown in FIGS. 1 and 2. Depression of the lever 50 moves the retention mechanism 48 about the retention pivot 60 to allow the ring 46 to be inserted into the transverse slot 54. An arm 62 extending between the retention mechanism 48 and the retention pivot 60 is at least partly contained housed within notch 64 in the retaining position. The spring 84 may be received within a spring bore 66. An access port 68 allows access within the ring holder 12 to secure a pin through the retention pivot 60. Springs for the locking mechanism 32 and pawl mechanism 42 may be similarly located on those structures.
The locking mechanism 32 and the pawl 42 operate in a similar manner as the retention mechanism, however in alternative embodiments, different designs may provide for different operation of these members.
In order to ensure a snug fit for the ring 46 in the transverse slot 54, a spring member 70 is placed at least partially through a bore (obscured from view) in the ring holder 12. A retaining plate 72 keeps the spring member 70 in position so that plunger 74 contacts the inserted ring member 46 and exerts a force so that the ring member 46 is contacted by the plunger 74 and the retention mechanism 48. The spring member 70 is preferably under compression when the ring member 46 is installed to positively retain ring against retention mechanism 48 having lip 86.
FIGS. 5 and 6 show an alternatively preferred retention mechanism 100. In this embodiment, a pivoting arm 102 with a stop 104 retains ring 46 in a transverse slot 106 which is similar to the transverse slot 54 of the preferred embodiment. The arm 102 is moveable about pivot 108 to allow a ring 46 to be inserted into the slot. The pivot 108 is preferably connected to slide 110 which is spring biased by spring 112 to a first end 114 of the ring holder 116. The arm 102 illustrated is biased into a locking position by spring 118. The slide 110 is moveable within housing 120 which is connected, and preferably an integral portion of the ring holder 116.
The slide 110 allows the retention mechanism 100 to accommodate a plurality of ring widths. FIG. 6 shows the operation of the arm 102 in a downward direction to release the ring 46 from the slot 106. A top surface 122 of the arm 102 contacts the ring 46 in compression to retain the ring 46 in the slot 106. Furthermore, the stop 104 retains the ring 46 from sliding out of the slot 106.
Numerous alternations of the structure herein disclosed will suggest themselves to those skilled in the art. However, it is to be understood that the present disclosure relates to the preferred embodiment of the invention which is for purposes of illustration only and not to be construed as a limitation of the invention. All such modifications which do not depart from the spirit of the invention are intended to be included within the scope of the appended claims.
|Cited Patent
|Filing date
|Publication date
|Aug 11, 1952
|Mar 2, 1954
|Ole A Nelson
|Surgical retractor
|Oct 18, 1974
|Jun 29, 1976
|William Kohlmann Gauthier
|Surgical retractor
|Jun 7, 1979
|Mar 10, 1981
|Codman & Shurtleff, Inc.
|Surgical retractor assembly
|Jul 27, 1981
|Dec 20, 1983
|Codman & Shurtleff, Inc.
|Surgical retractor holder
|Oct 9, 1981
|Jan 10, 1984
|Codman & Shurtleff, Inc.
|Multi-position ratchet mechanism
|Nov 12, 1993
|Dec 27, 1994
|Codman & Shurtleff, Inc.
|Multi-position ratchet mechanism
|Oct 31, 1995
|May 26, 1998
|Tyagi; Narendra S.
|Combination surgical retractor, light source, spreader, and suction apparatus
|Mar 19, 1998
|Apr 13, 1999
|Koros; Tibor B.
|Retractor blade locking mechanism
|Nov 10, 1998
|Mar 28, 2000
|Koros; Tibor B.
|Rotatable retractor blade with detachable clamp
|Oct 6, 1999
|Jun 5, 2001
|Codman & Shurtleff, Inc.
|Surgical retractor assembly with controlled rotation
|Aug 31, 1998
|Aug 13, 2002
|Tibor Koros
|Ratchet mechanism for a surgical retractor assembly
|Feb 7, 2001
|Mar 25, 2003
|United States Surgical Corporation
|Surgical retractor
|Citing Patent
|Filing date
|Publication date
|Mar 31, 2003
|Jan 2, 2007
|Depuy Spine, Inc.
|Surgical retractor
|Oct 15, 2003
|Mar 20, 2007
|Boss Instruments, Ltd., Inc.
|Swivel retractor blade assembly
|Apr 2, 2003
|Mar 4, 2008
|Peak Performance Company
|Crank retractor handle
|Dec 5, 2006
|Jun 24, 2008
|Boss Instruments, Ltd., Inc.
|Swivel retractor blade assembly
|Feb 7, 2005
|Jan 6, 2009
|Peter Edward Fetzer
|Push-button activated grasper for surgical retractor
|Jun 29, 2006
|Jul 20, 2010
|Depuy Spine, Inc.
|Surgical reactors and methods of minimally invasive surgery
|Jan 4, 2006
|Apr 5, 2011
|Depuy Spine, Inc.
|Surgical retractor for use with minimally invasive spinal stabilization systems and methods of minimally invasive surgery
|Sep 29, 2006
|Jun 7, 2011
|Depuy Spine, Inc.
|Non-rigid surgical retractor
|Jul 19, 2011
|Depuy Spine, Inc.
|Surgical access devices and methods of minimally invasive surgery
|Oct 18, 2011
|Depuy Spine, Inc.
|Surgical methods and surgical kits
|Jan 2, 2009
|Jan 22, 2013
|Peter Edward Fetzer
|Push-button activated grasper for surgical retractor
|Jul 1, 2010
|Aug 27, 2013
|DePuy Synthes Products, LLC
|Surgical retractors and methods of minimally invasive surgery
|Jun 17, 2011
|Oct 8, 2013
|DePuy Synthes Products, LLC
|Surgical access devices and methods of minimally invasive surgery
|Sep 30, 2008
|Dec 10, 2013
|DePuy Synthes Products, LLC
|Surgical retractor systems and illuminated cannulae
|Aug 30, 2011
|Jan 7, 2014
|DePuy Synthes Products, LLC
|Surgical methods and surgical kits
|May 6, 2011
|Feb 9, 2016
|DePuy Synthes Products, Inc.
|Non-rigid surgical retractor
|Oct 15, 2003
|Jul 8, 2004
|Phillips Burns P.
|Swivel retractor blade assembly
|Mar 31, 2003
|Sep 30, 2004
|Depuy Acromed
|Surgical retractor
|Mar 22, 2005
|Jun 22, 2006
|Tibor Koros
|Rotatable holder assembly for a surgical retractor blade
|Feb 7, 2005
|Aug 10, 2006
|Fetzer Peter E
|Push-button activated grasper for surgical retractor
|Dec 5, 2006
|Jun 21, 2007
|Phillips Burns P
|Swivel retractor blade assembly
|Jan 4, 2006
|Jul 5, 2007
|William Frasier
|Surgical access devices and methods of minimally invasive surgery
|Sep 30, 2008
|Jan 15, 2009
|Depuy Spine, Inc.
|Surgical retractor systems and illuminated cannulae
|Jan 2, 2009
|May 14, 2009
|Peter Edward Fetzer
|Push-button activated grasper for surgical retractor
|Jun 21, 2004
|May 6, 2005
|Boss Instruments, Ltd.
|Swivel retractor blade assembly
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|May 26, 2006
Owner name: BOSS INSTRUMENTS, LTD., INC., TENNESSEE
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:PHILLIPS, BURNS P.;REEL/FRAME:017681/0446
Effective date: 20060519
|Nov 5, 2007
|Fee payment
Year of fee payment: 4
|Nov 12, 2007
|Maintenance fee reminder mailed
|Nov 4, 2011
|Fee payment
Year of fee payment: 8
|Oct 21, 2015
|Fee payment
Year of fee payment: 12


text:
Pa. officer killed in 2-vehicle crash
Penn. State Trooper John C. LaRose, 50, lost control of his squad under wet conditions and collided with another vehicle
Duty Death: John C. LaRose - [Muncy, Pennsylvania]
End of Service: 07/02/2013
By PoliceOne Staff
MUNCY, Pa. — A Penn. State Trooper was killed Monday afternoon when his Crown Vic lost control in the rain and collided with another vehicle.
Sgt. John C. LaRose, 50, was on his way home at the time of the accident. The occupants in the second vehicle suffered moderate injuries and were treated at a nearby hospital, according to the Sun Gazette.
LaRose, a 23-year veteran of the force and an Air Force veteran, spent 11 years flying in the state police's Aviation patrol unit.
"He was a pilot of exceptional skill and a really nice guy. He was a very articulate, very intelligent man," said David Frey, marketing director with the airport.
An avid sports enthusiast, LaRose coached baseball, was involved in the elementary wrestling program, and sat on the board of his local youth football program.
Recommended Police Heroes
Photo: Widow, colleagues honor fallen LEO with maternity photo shoot
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Recommended siteA-Z Lyrics Universe
Lyrics/song texts are property and copyright of their owners and provided for educational purposes.
Red dragon Lyrics by Swollen Members
Red dragon by Swollen Members
Artist(Band):Swollen Members
Sorry, I have no Red Dragon Lyrics,would you please submit Red Dragon Lyrics to me? Thank you.
Red Dragon Lyrics related links:
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- Missing Jackson woman found dead in Bollinger County pond (06/23/16)2
- Village of Zalma must disincorporate, law says (06/23/16)5
- Many Jackson students may face random drug-testing (06/26/16)26
- Jackson man accused of felony assault after attack at Cape bar (06/26/16)8
- I want an angry president (06/21/16)17
- Missouri House votes to allow concealed weapons without permits (04/28/16)8
- Man allegedly kicks woman, punches man after denied a sexual favor (06/23/16)
- Witness says he saw suspect kill his best friend (06/24/16)
- Advance graduate will become superintendent of its schools (06/21/16)1
- Odd court hearing ends with judge declaring probable cause in abuse case (06/22/16)4
Australian police charge man in wheelchair with drunken driving
BRISBANE, Australia -- A man found asleep in a motorized wheelchair on a highway in northern Australia was charged with drunken driving, police said Monday.
Officers in a patrol car noticed the man slumped in the stationary chair about 10 a.m. Friday on an exit lane near the tourist city of Cairns, regional traffic Inspector Bob Waters said. Cars were swerving to get around him, Waters said.
The officers breath-tested the 64-year-old man, who registered a blood alcohol reading of 0.301 -- more than six times the legal driving limit. He was charged with operating a vehicle while drunk and ordered to report to court July 7, where he faces a stiff fine if convicted.
"The vehicles that we normally hear about with drink driving are the family car, the truck, the motorbike," Waters said. "But there are also other classes of vehicles that are subject to drink-driving laws," including horses, bicycles and motorized wheelchairs.
The man, whose name was not released, told police he was making a nine-mile trip from his home to a friend's place, Waters said.
"He placed himself in a very dangerous situation," he said.


text:
About عكس زن باحال
عكس زن باحال زنوکس Completely disclosed rules. زنوکس We want to teach you simple forex entry setups that are also easy to identify, because we really believe trading should also be kept simple. The news is released at certain times on the economic calendar and is reported instantaneously by news outlets including Bloomberg,Reuters,Dow Jones,Trade The News and CNBC making it universally accessible. Does your trading system lose money? زنھ سیکس Watch The Forex Interview Below. Also that fact that I like it, better than cartoons or playing some street games.
Well, You can swing trade the daily charts if you live a busy lifestyle, of if time allows, move down to 1 hour and 4 hour forex charts for quicker trade setups.
زنھ سیکس This ebook is filled with solid forex strategies, similar to those used by banks and financial institutions. عكس زن باحال Some of these agencies charge traders a lot of money for instant news so traders can trade the spikes that occur sometimes when the figure is outside the expected range.
زنوکس عكس زن باحال Major reports released for USA include Non-Farm Payrolls,Trade Figures,Retail Sales,Durable Goods,Consumer PriceIndex,Treasury International Capital,Current Account and Advance GDP. An ingenious strategy that can increase your ability to spot potential winning trades by 100%!


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About OSHA
A to Z Index
Contact Us
What's New
November 15, 2010
Mr. Kenneth M. Colonna
RSC Equipment Rental
6929 East Greenway Parkway, Suite 200
Scottsdale, Arizona� 85254
Dear Mr. Colonna:
Thank you for your September 1, 2010 letter to the Occupational Safety and Health Administration (OSHA) regarding the recordkeeping regulation contained in 29 CFR Part 1904 - Recording and Reporting Occupational Injuries and Illnesses. In an effort to provide the public with prompt and accurate responses, we developed and continue to refine a set of Frequently Asked Questions (FAQ), in addition to maintaining a log of Letters of Interpretation (LOI) on the OSHA Recordkeeping web site.
Your letter states an employee was returning to work from his lunch break with two co-workers.� After parking in the parking lot, which is open to RSC employees and customers, the employee placed his foot on the running board of his co-worker's truck, caught his heel on the running board and fell breaking his ankle.
Question:� Does the incident meet the criteria of occurring in the workplace and thus is a recordable event?
Response:� We presume from your letter that the parking lot in question is your company's parking lot.� Work-related exposures include most of the employees' activities on the employers' premises as well as situations off premises where employees are engaged in job tasks or are there as a condition of employment. For recordkeeping purposes, company parking lots are part of the employer's premises, and therefore part of the establishment.� (See OSHA's Frequently Asked Questions (FAQ) 5-10.
Under Section 1904.5(b)(2)(v), an injury or illness is not


text:
Writing Perl test cases
If you've ever automated any operations with Perl you'll most likely have written a small script or two, and then left them to run. But how do you know that your code is correct? The answer is to write some test cases and verify they perform correctly. With Perls test facilities this is a simple thing to do.
Most large Perl projects have a test suite, and so do many of the common modules you'll have installed.
To get started we'll look at a simple example. Suppose your script uses some non-standard Perl modules that suggests the very first test you write should verify that those are available. That way if you attempt to run the program upon a new host you'll immediately know whether you need to install these non-standard modules.
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KaOS 2016.06 Moves the Distro to Linux Kernel 4.6, Adds Full-Disk Encryption
The developers of the KaOS Linux operating system have had the great pleasure of announcing the release and immediate availability for download of the KaOS 2016.06 ISO image with some very exciting goodies. First and foremost, the devs have decided to move the distribution from the long-term supported Linux 4.4 kernel series to Linux kernel 4.6, which makes it possible to fully automate the early microcode update. Furthermore, the default desktop environment has been migrated to the Beta of the upcoming KDE Plasma 5.7.
Tiny Core Linux 7.2 Enters Development, First Release Candidate Is Out Now
The developers of one of the smallest GNU/Linux operating systems, Tiny Core, have announced that the next point release in the Tiny Core Linux 7 series, version 7.2, is now open for development. Tiny Core Linux 7.2 RC1 (Release Candidate 1) has been released today, June 25, 2016, and it lets early adopters and public testers get an early taste of what's coming to the final Tiny Core Linux 7.2 operating system in the coming weeks.
Huawei CEO: Will keep using Android as long as it's open
He made the said comment in a Weibo post, where-in he also noted that Google's mobile OS has promoted the development of smartphones, which in turn has benefited consumers. Interestingly, he didn't say anything about whether or not Huawei is developing an in-house mobile OS - said to be called Kirin OS. His silence on the matter, though, can be taken as a confirmation of sorts, especially when his comment reflects the possibility of Google restricting the companies' freedom with Android in future. Also: Huawei CEO Comments On Rumors about its Independent OS


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- Counsellors and Psychotherapists in and near Monkseaton
Counsellors and Psychotherapists in and near Monkseaton
122 results within 15 milesWe only list professional counsellors
Andrea Frost MBACP
I am a skilled, experienced counsellor that offers counselling within various locations throughout the North East.Counselling is an opportunity to work through what is currently happening in your life in a safe, therapeutic space. I am a...
Katie Linden MBACP
I am a Registered Member of the BACP, working in Newcastle and Heaton. I have particular interest and experience in working with eating disorders, but I support people with all kinds of concerns. First session is £20, see website for further details.
Kate Bull
Are you feeling like you need to work through some issues? Do you want to learn more about yourself or find out who you really are? Are you feeling stuck or trapped in life? Not quite sure traditional counselling is for you? I offer outdoor...
Donna Wynne
Thank you for visiting my page.I am a qualified counsellor's with almost four years experience. I have worked with adults, adolescents and children. I have worked with a variety of issues including bereavement, sexual abuse, depression, anxiety,...
Kevin Daly, M.A., BACP Senior Accredited Practitioner
With almost thirty years experience, I offer a distinctive blend of knowledge, expertise and skills, with which to help people overcome difficulties and so find improved happiness and fulfillment. I believe counselling is a process which engages the...
Audrey Lenthall, Counsellor, Registered MBACP
I am a professionally qualified Department of Health accredited counsellor. I have been counselling effectively and passionately since 2007 and offer a safe, comfortable and confidential environment in which to work through your problems.Despite...
Roz Cassidy MA MBACP(accred) "enabling Change"
I am a BACP accredited counsellor with 16 years of experience and a registered Myers Briggs (MBTI) facilitator, offering short or long term support from the peaceful private setting at Jesmond Therapy Centre. I believe in the power of the...
Nick Judson Jungian Oriented Integrative Psychotherapist
Professionally qualified, UKCP registered Psychotherapist. Fees starting at £45 per hour, some reductions available, please consult website for details. Appointments 9am to 9pm Mon to Fri. Jungian oriented Integrative psychotherapy and counselling.
Stephen Jarvis -MBACP - Diploma Counselling -Diploma CBT
Hi Thanks for checking out my profile. I have a lot of experience working with a wide range of issues and situations, working with individuals, groups, couples, and families, if you need to talk please call me for an initial consultation. Thanks
Ambre McMinn MBACP registered
I've been qualified since 2007 as an integrative counsellor working with adults and children. A couple of years later I qualified in supervision.I started working voluntary to gain extra experience, then went into youth work until I landed the...
Maureen Brown
I run my own company, Quantum Change (UK) Ltd, which offers a unique blend of coaching, hypnotherapy and breakthrough therapy to enable clients to achieve goals – whether it is to get rid of a bad habit or move forward towards a goal the...
Valerie Adlparvar MA (Accred) Counsellor. MBACP
I am an experienced Psychotherapist and EMDR practitioner with over 15 years of experience in both NHS and private practice. I am the lead therapist at Jesmond Therapy centre offering individual counselling for a wide variety of issues; I also offer...
Dr Rhian J. Lewis, Chartered Counselling Psychologist, D.Couns.Psy, C.Psychol
Hi I'm Rhian, as your therapist I'll be here to help you to make sense of yourself & your experiences. Coming to understand ourselves in this way can really set us free. When you can't see the wood for the trees...look to The Clearing
Nicole Addis
Thank you for enquiring. Ring for free half hour consultation. I specialise in anxiety, relationship difficulties, distress following a traumatic experience. With over 10 years experience, I continue to place the client at the heart of the process.
Emma Paterson UKCP Counsellor and Psychotherapist
Hello,I'm Emma - an experienced UKCP registered counsellor and psychotherapist.Finding the right counsellor can be a matter of trial and error - which is why I like to offer a free preliminary session so you can get an idea of how we might work...
Alan Wildsmith
I offer non-judgemental, professional counselling for a range of different psychological issues. I'm a warm, focussed and professional practitioner.
Melissa Casey
Hi I'm Melissa. As your therapist I'll be here to guide you through the hard times. I draw upon my medical training & counselling experience to help you get to the heart of the issue. When you can't see the wood for the trees - look to The Clearing
Elizabeth Steenburg-Coleman
Hi, I'm Elizabeth, an experienced psychoanalytical psychotherapist. I work with individuals, couples & families to support them to find their way forward through difficult times. When you can't see the wood for the trees - look to The Clearing
Graeme Armstrong MBACP
Unsure about the next step in your life? Feeling depressed, alone or stuck in a relationship that's seems to be going nowhere? Step family issues? Need some support getting through? Hi. I'm Graeme Armstrong, and I offer counselling in a...
Gill Cassidy (atthestillpoint.org.uk) MBACP Accredited
My hope is to offer you a compassionate space to be heard and to discover a way forward. At the heart of my work is the healing potential of the therapeutic relationship. My desire is to meet and be alongside you as you draw on your inner strength...
Dr Scott J Staniforth, PhD Biomed Sci, Dip Psychotherapeutic Counselling
Welcome! I work as a BACP registered Psychotherapeutic Counsellor in practice at the Jesmond Therapy Centre. I have extensive experience working with individuals & couples, offering therapy in an inviting setting. I warmly welcome your enquiries :-)
Carolyn Polunin
I am a UKCP registered therapeutic counsellor and psychotherapist who sees people for a range of different reasons such as relationship difficulties, depression, anxiety, bereavement, anger, difficulty adjusting to life changes, trauma and abuse.
Lorna Evans Counsellor & Psychotherapist - BACP
Hello, I believe in the power of counselling to enable us to reduce anxiety and depression, increase self awareness, create change, happiness and freedom in our lives. Happy to arrange a free call or email to answer your questions about counselling.
Ann Goodwin MBACP - children, young people and adults
I am an integrative psychotherapist with ten years experience working therapeutically with children between 3-18 years, and I also have extensive experience working with adults. As well as my private work I have worked within two leading children's...
Ruth Marshall
Life is never a straightforward road. We are constantly presented with change and challenges. We can never predict what is around the corner, furthermore we cannot predict how we react, cope or handle problems and issues that life throws at us. Life...
Jackie Robertson
Fully Qualified.
Sian Barnard, CBT therapist MBABCP
Practical help and understanding for issues concerning insomnia, anxiety, weight, stress, confidence, anger, public speaking claustrophobia, jealousy exams procrastination, addictions, guilt, depression, bullying confrontation family feuds and OCD
Marianne Hvistendahl Allday
If you need someone warm, empathic and non-judgemental, here I am. An experienced and well-qualified counsellor, I have counselled for 15 years. I am registered with the BACP, member of the BPS and the RSM. I can be found in Gosforth and Jesmond.
Alison Marley
Hi, I'm Alison. I'm trained in TA, gestalt, & psychodynamic therapies, so whether you're looking to solve a current problem or get to the roots of an ongoing issue, I'm here to help. When you can't see the wood for the trees - look to The Clearing
Ann Attwood MBACP(Accred) MACC
Are you feeling unhappy, mixed up or stuck? Are you struggling in your relationship (with partner, friends or family)? Are you finding life difficult or stressful? Maybe you are not even sure what is troubling you or what you need. You feel things...
BLISS Services. Andrew Welch BSC (HONS) CBT. FDA Counselling (MBACP) (MBABCP)
We can offer affordable sessions between £15-£30 per hour. (depending on your circumstances) for problems that relate to: Anger management, depression, social anxiety, OCD, ADHD, PTSD, generalised anxiety, phobias, health anxiety, panic,...
Northern Guild Psychotherapy and Counselling
Northern Guild has been providing a high quality, confidential counselling and therapy service throughout the North East for over 30 years. Led by Christine Lister-Ford & Jennie McNamara, each of whom has been made an Honorary Fellow of UKCP for...
Jesmond Therapy Centre
I would like to Welcome you to a special place....... As soon as you enter the spacious and tranquil environment of the new Jesmond Therapy Centre you sense a difference. Nowhere in Newcastle focuses such an array of skills and treatments on...
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text:
Today's Top Street Teamers
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Outstanding Antique Sterling Silver Sauce Boat By Charles Fox / England
This item has been shown 0 times.
Outstanding Antique Sterling Silver Sauce Boat By Charles Fox / England:
OUTSTANDING ANTIQUE STERLING SILVER SAUCE BOAT by CHARLES FOX / ENGLAND Product Description
Maker's Mark – CF
Standard Mark – Sterling Silver
Date Mark - 1840
City Mark – Leopard's Head – London
Duty Mark – Queen Victoria I
An Exceptional Sauce Boat
with Intricately Hand-Chased design
and a Fine Applied Scroll - Shaped Handle
with a Shell Motif Cast Base
Weight of Sauce Boat – 486.7 grams
Height of Sauce Boat - 7 inches to the top of the handle
Width of Sauce Boat – 7 inches from handle to spout
Excellent overall condition* with little to no wearon handle or bowl or base
Fine, soft patina,
*PLEASE NOTE ! there has been a Monogram Removal, probably done quite some time ago,
leaving some surface scratches and very slight rubbing to the engraved design.
silver is still strong in this area with noobvious thining.
(please be advised we have added many detailedimages to portray this area as accurately as possible))
Please email if we can answer any questions
An Exceptional Piece for the Discriminating Collector
Presented by SANDRA BIANCOLLC
Greetings,Thank You so much for viewing over 40 yearswe have delightedin finding andofferingwonderful and desirable treasures from around the world to our discriminating clientele. Our goal is quality not quantity, to that end our items are never new or mass produced. Many are unique hand made works of artacquired from estates and private sources. All items are genuine, NO fakes, forgeries, copies or imitations... we sell only authentic antique, vintage, and signed designer pieces, many rare and hard to find. We fully describe each item and include as many images as possible to fully visuallyportray each item including any wear or damage. However, if you have additional questions or would like another image or close upshot we will do our best to accommodate. Please do not hesitate to contact us for more information. Best Wishes, Sandra B
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inkFrog Analytics
Outstanding Antique Sterling Silver Sauce Boat By Charles Fox / England:
Good Solid Silver Vintage Sauce Boat Hallmarked Sheffield 67 - 183.5 G 5.9 Tr Oz
American Baltimore Sterling Silver Repousse Gravy Boat Jacobi & Jenkins
Wallace Sterling Silver Footed Brandy Warmer W/ Wood Handle And Two (2) Spoons.
Antique Tiffany & Co Sterling Silver Meander Greek Key Gravy Sauce Boat 337grams
Arthur Krupp Top Quality Silver Or Silver Plate 1914 Gravy Boat.
Vintage Frank Whiting Gravy Boat And Sterling Silver Gravy Spoon


text:
Earthquake Alert!
Josh Clemm
- February 19, 2016
( 21,378)
See Magnitude 1.0+ from the U.S. and Magnitude 4.5+ earthquakes from all over the World.
**USGS changed their data source breaking the list! Please upgrade to latest version!**
- Tab between map and list
- Latest quakes in the World.
- Filter what you see
- Click quake to view on map
- Map shows magnitudes
- View details on USGS site
- Alerts and Push notifications!
- Download the Alerter App to be more informed!
- Satellite Map view
- Share to social media
- Report if you felt it to USGS
- Choose what you want to load
Was great, until it wasn't. Following the recent quakes in Japan this app was perfect for helping know what our family was facing & how our disaster relief team could prepare. Now, our team is on the ground & none of the quakes they're feeling are even shown....& they are not all small either! What's up?
Inaccurate... Earthquake alerter free promted me for a 7.3 magnitude earthquake today (04/29/16_3:33 am) in vanuatu but earthquake alert! listed only a 7.0 magnitude earthquake in vanuatu today (04/29/16_3:33 am). Which is real? Please address this issue sooner. Thank you.
Very good app. I have tried several, almost all. I prefer this one. It is very easy to use. it gives several types of information in regards to the subject. Keeps me well informed and alert in case of an emergency in my area.
Shaken good app. Very cool app. Let's u see what's going on globally around the world with seismic activity.
Feel it doesn't work. I keep getting a 404 error message
Doesn't notify This app used to work great. I even paid for the upgrade. I've Uninstalled and still doesn't work
What's New
2.0.2: Fixes News tab
2.0.0: New Stats tab, UI update, bug fixes


text:
Publishers Namco Bandai have now released a trailer for the recently announced RPG, Fragile-Dreams-Farewell-Ruins-of-the-Moon.
It features a little gameplay footage and a lot of Japanese jabberings.
Ah Hotaru. This Star, it's this sort of vastness the Earth is overflowing with people, but every person thinks "why am I alone?".
It's because their mind is wrought with madness. To end this madness I must destroy that world, and to do that, I must locate the virus.
3,024 news items
Wiipaw said:
So he's a communist?
Nova said:
Kind of short. But from the few pieces of footage it's easy to see that this game won't be graphically enhanced.
sidkid004 said:
WHOO-HA!- Al Pacino. The translation is really making me scratch my head. Are you looking for a cure for a virus? Anyway I'm still interested.
Keranu said:
Thanks for posting the translation, which is quite interesting and confusing. Is she going to kill the whole world by finding a deadly virus? If so, that sounds pretty awesome.
Nintendoof said:
Oh. Hotaru's a girl?! Or what?
Wiimaster said:
She is killing the land and population with the virus while you (seto) must locate her and kill her. Looks great.
WiiNinja said:
Oh, I figured it out! So when he says "destroy that world", he really means to end loneliness for everyone (because they're all alone).
Splatoon's Last Ever Splatfest is Coming
And It's Sister vs. Sister
Nintendo President Satoru Iwata Passes Away at 55
Rest In Peace
Nintendo has detailed the return of its World Championship
Do you have what it takes?
Disney Infinity 3.0 Edition Officially Revealed
The Force is strong with this one...
Rumor: Disney Infinity 3.0 Leaked Early
Straight from a Galaxy Far, Far Away...
Mario Kart 8 DLC Pack 2...OH YEAAAAH!
Nintendo should do this more.
The Nintendo GameCube: An Interesting Legacy
Will The Wii U Have a Similar Fate?
Project Ukulele - Possible Hint at Characters
Could it be?
Free to Play Pokemon Shuffle now available on 3DS eShop
Nintendo offers another micro-transaction based title
Gold Mario Amiibo is a Wal-Mart Exclusive
Get ready to shell out your coins
Jeremy Kanjanapangka said:
Hi Andrew! Sorry, I just saw this message right now! You can add my FC (1504-5707-8126) and we can play together ... Monster Hunter 4 Ultimate review
yoshi said:
jrncn bbmrban ... Controller compatibility chart
yoshi said:
i have a wii ... Controller compatibility chart
Tigerbaby said:
I love resident of 4 ... Resident Evil Revelations 2 is Skipping Nintendo Systems
Andrew Gray said:
Hey Jeremy, just recently started the game myself. Would you mind sending me your gathering hall/hunter info later? If ... Monster Hunter 4 Ultimate review
Wii's World is not officially affiliated with Nintendo! (but they wish we were).


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