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If you donate on Wednesday 12th from 9 am EST, GlobalGiving will match you donation up to $1,000 at 30%. There is $75,000 available in matching and they're offering a $1,000 bonus award for the most individual donors and a $1,000 bonus award for the most money raised by Project. You can make a huge difference in our low income youth by donating today!!!!!
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Ciudad de Buenos Aires,
Capital Federal,
Capital Federal,
Buenos Aires

subset: commoncrawl


text:
365 Organic Balsamic Vinaigrette
365 Organic Balsamic Vinaigrette, a bargain at only $3.49 for 16 oz., left the other greens with envy thanks to its "rich, natural flavors" of balsamic and red wine vinegars, garlic, and fresh black pepper. "This one is simple and yummy," noted one impressed taster.
Reviewed: July 2009
Price When Reviewed: $3.49 for 16 oz.
What do you think?
Your Dark Chocolate Is Lying to You
A new government report found that it might be closer to milk chocolate than you think.
More From Food & Drink


text:
A memory array with memory cells arranged in rows and columns with each cell having twin EEPROMs featuring subsurface stepped floating gates for electric field concentration. The twin EEPROMs employ only a single layer of poly, one portion being a floating gate of each EEPROM and another portion being word lines. The twin EEPROMs share a common subsurface electrode by having diffused control lines and a diffused bit line. The two EEPROMs are symmetric across the common electrode.
1. A non-volatile memory array having rows and columns of memory cells, each cell comprising:
first and second non-volatile memory transistors symmetrically arranged in a common substrate having a planar surface and sharing a common electrode, each memory transistor having a first portion of a single layer of poly electrically floating over the substrate in a configuration having a step that extends below the planar surface of the substrate and separated from the substrate by an oxide layer thereby allowing the floating poly layer to act as a floating gate and having a capacitor connected thereto configured to act as a control electrode, the floating gate capable of electrically communicating with a subsurface electrode through the oxide layer;
first and second word lines outward of the first and second memory transistors, respectively, the word lines shared by a plurality of memory cells in the same column, a bit line transverse to the word lines in capacitive relation therewith and also in capacitive relation to the floating gates of the first and second memory transistors; and
first and second control lines, each being a plate of the capacitor associated with each memory transistor.
2. The array of
3. The array of
4. The array of
5. The array of
6. The array of
7. The array of
8. The array of
9. The array of
10. The array of
11. The array of
This application is a continuation-in-part of prior application Ser. No. 10/423,637 filed Apr. 25, 2003 now U.S. Pat. No. 6,919,242, a continuation-in-part of prior application Ser. No. 10/465,718 filed Jun. 18, 2003 now U.S. Pat. No. 6,888,192, and a continuation-in-part of prior application Ser. No. 10/680,355, filed Oct. 6, 2003. All three applications are herewith incorporated by reference in their entirety.
The invention relates to non-volatile memory transistors and, in particular, to a compact arrangement of such memory cells for an array and a method of making them.
In prior application Ser. No. 10/423,637 entitled "Mirror Image Memory Cell Transistor Pairs Featuring Poly Floating Spacers," as well as in prior application Ser. No. 10/465,718 entitled "Mirror Image Non-Volatile Memory Cell Transistor Pairs with Single Poly Layer," both assigned to the assignee of the present invention, B. Lojek described an arrangement of non-volatile MOS memory transistors for a memory array wherein symmetric pairs of transistors were built in a memory array. Transistor pairs shared an electrode in a common well, such as a drain electrode, but were otherwise completely independent. The pair was manufactured between a pair of isolation regions and sharing the same substrate region, almost as if a single transistor were constructed there.
In the prior art, single MOS floating gate transistors that stored two data bits have been devised as a way to achieve compactness. Since millions of data bits are frequently stored in non-volatile memory arrays, small savings of space are multiplied significantly over the array. In prior application Ser. No. 10/327,336 entitled "Multi-Level Memory Cell with Lateral Floating Spacers," assigned to the assignee of the present invention, B. Lojek described how two spacers, on opposite sides of a conductive gate, behave as independent charge storage regions for separate binary data, thereby allowing a single non-volatile MOS transistor to store two binary bits. Each memory cell is connected to two bit lines and one word line. The bit lines are phased so that during a single clock cycle, first one bit line is active and then the other while a word line is active for the entire cycle. In this manner, both storage areas may be accessed for a read or write operation in a single clock cycle.
In U.S. Pat. No. 6,043,530 to M. Chang, a MOS memory transistor construction is shown employing band-to-band tunneling. In U.S. Pat. No. 6,323,088 to F. Gonzalez et al., a multibit charge storage transistor addressing scheme is shown with phased bit lines.
In the prior art, multibit charge storage structures are known that achieve good data density in a memory array without giving up valuable chip space. One of the problems that is encountered as density increases is that the amount of crosstalk between storage sites increases. Because the charge storage structures are so small, one charge storage location can sometimes influence another. On the other hand, separation of charge storage sites gives up chip space. The ultimate separation is one dedicated transistor for each data bit. Accordingly, an object of the invention is to provide good separation for data bits afforded by dedicated transistors yet achieve the compactness of multibit charge storage structures for a non-volatile memory array.
The above object has been achieved with a memory array having cells with twin EEPROM memory transistors that occupy a space almost the same size as a single EEPROM memory transistor. The twin transistors of each cell are symmetrically arranged in a common substrate and feature a single poly layer, with portions used as floating gates that are stepped below the level of the substrate surface, yet insulated from the substrate by thin oxide. The floating gate electrically communicates with a subsurface electrode that participates in charge transfer to the floating gate. The usual EEPROM control gate is replaced by a first capacitor wherein the same poly portion used to form the floating gate extends to form a second plate of the first capacitor. The first plate of the first capacitor is a control line connected to a phased signal source whereby phasing of plates of the twin cells allows each transistor to act independently. The drain of each transistor is connected to one plate of a second capacitor and to a bit line while the second plate is connected to a word line.
By stepping the floating gate into the substrate and forming a floating gate corner in the substrate, the intensity of electric field from a subsurface electrode will increase and enhance tunneling action.
With reference to
Select capacitor 19 has a first electrode 31 connected to drain 21 of first memory transistor 15 and also connected to the first bit line, BL1. The second electrode 33 of select capacitor 19 is connected to word line WL1. The word line WL1 is extended from first electrode 31 along line 35 into another cell. The floating gate 23 of memory transistor 15 is connected to a first electrode 37 of control capacitor 29, while second electrode 39 is connected to a first control line terminal 41. A pulse on terminal 41 charges the second electrode 39, causing induced charge to appear on first electrode 37 which forms a floating gate together with electrode 23. This is one of two ways in which charge appears on the floating gate 23. Another way for charge to appear is by tunneling or electron injection from source or drain electrode 21 and 25. When one voltage is applied to bit line BL1 and another voltage is applied at source contact 27 charge may be transferred onto the floating gate 23 by tunneling charge transfer mechanisms. Just as the word line WL1 extends into another memory cell in the same column along line 35, bit line BL1 is also extended into a memory cell in the same row along line 43.
The second memory transistor 115 is symmetric with first memory transistor 115 relative to source contact 27. The second memory transistor 115 has a floating gate 123 which may be charged by control capacitor 129. Memory transistor 115 has a drain electrode 121 connected to a first plate 131 of select capacitor 119 and a source electrode 125 connected to source contact 27. The first plate 131 is also connected to the bit line BL1. The second plate of capacitor 119 is connected to the word line WL2. The word line WL2 is extended from the first electrode 131 along line 135 to a control capacitor (not shown) into a neighboring cell in the same column. The bit line 43 similarly extends from the first electrode of select capacitor 119 into a neighboring cell in the same row.
Memory cell 13 is typical of the memory cells in the memory array 10. Each cell is seen to have twin non-volatile memory transistors that are symmetric about a source contact, such as source contact 27. The two memory transistors have floating gates associated with two control capacitors on the one hand and have drain or source electrodes associated with two select capacitors on the other hand. The two control line terminals 41 and 141 associated with the control capacitors allow programming of the two memory transistors so that each transistor is independent of the other, even though they share a common source electrode at source contact 27 and also share bit line BL1. Memory cell 13 is associated with two word lines, WL1 and WL2, as well as one bit line, BL1.
With reference to
With reference to
Turning to
With reference to
A layer of poly is deposited over the substrate surface and then etched leaving floating members 82, 84, 86, and 88. Portions of these floating members will become floating gates of twin EEPROM transistors. The floating members have portions extending over the control line diffusions 62 and 64, as well as control line diffusions 66 and 68. Portions of the floating members also extend over the source mask regions 52 and 55. The poly layer is also used to define word lines WL1 and WL2, spaced apart and lying outwardly of the cell core.
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text:
Els Salats Apartments, Ventallo
Main amenities
- 14 apartments
- Near the beach
- Outdoor pool
- Multilingual staff
- Tour/ticket assistance
What's around
- In L'Estartit
- Estarit Beach (0.6 mi / 1 km)
- Illes Medes (1.4 mi / 2.3 km)
The apartment was situated close to the town centre which was great but was extremely basic, which for the money I paid I was expecting that. Had I have travelled in high season…
Enter dates to check prices
Hotel Info: 866-539-8117
- Apartment, max. 4 adults
- Apartment, max. 5 adults
- Apartment, max. 4 adults
- Standard Apartment, 1 Bedroom
- Apartment, max. 4 adults
- Standard Apartment, 1 Bedroom
- Apartment for 1 to 4 People
- Apartment for 4 people
- Apartment for 2 people
- Apartment for 3 people
Recommended hotels
At a glance
Key facts
Hotel size
- This hotel has 14 rooms
- This hotel is arranged over 3 floors
- Check-in time 5 PM-8 PM
- Check-out time is 10 AM
To make arrangements for check-in please contact ahead of time using the information on the booking confirmation. Check-in is 5 PM to 8 PM and is closed on Thursdays and Sundays. Guests planning to arrive outside these hours must contact this property in advance for check-in instructions and key retrieval information. Please contact the office using the information on the reservation confirmation received after booking.
Required at check in
- Credit card or cash deposit required
- Government-issued photo ID required
Travelling with others
- No pets or service animals allowed
Extra people
- Roll-away beds available, charges may apply*
- No parking
Nearby Three Star Ventallo hotels
In the hotel
- Number of outdoor pools -
- Outdoor pool
- Tours/ticket assistance
- Number of buildings/towers - 1
In the room
- Coffee/tea maker
- Sofa bed
- Balcony
- Refrigerator
- Microwave
- Kitchen
- Cookware, dishware, and utensils
Top Ventallo hotels
Recently reviewed hotels in Ventallo
Els Salats Apartments, Ventallo's small print
Also known as
- Els Salats Apartments
- Els Salats Apartments Torroella de Montgri
- Els Salats Torroella de Montgri
Cash transactions at this property cannot exceed EUR 2500, due to national regulations. For further details, please contact the property using information in the booking confirmation.
Noise-free guestrooms cannot be guaranteed.
This property does not have elevators.
Mandatory fees
You'll be asked to pay the following charges at check in or check out:
A tourist tax will be collected at the property upon arrival. The tax applies up to a maximum of 7 nights per person per stay. Children under 17 years of age are exempt from this tax.
- A tax is imposed by the city: EUR 0.50 per person, per night, up to 7 nights. This tax does not apply to children under 17 years of age.
Deposit: EUR 100 per stay
We have included all charges provided to us by this hotel. However, charges can vary, for example, based on length of stay or the room you book.


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The Story Of Sharing America's Marrow
Sam Kimura, her sister and her best friend are on a mission to help people around the country in need of life saving blood marrow. See how these three young women are going about making a real difference.
Best Ski Slopes For Kids Near Baltimore
There's "snow much fun" for kids and their families at these top mountain resorts in the area.
5 Helpful Tips For A Long Life
Want to live a healthy and happy life for decades to come? David B. Angus, MD, author of "A Short Guide To A Long Life," has five tips to have you living well for years to come.
Ask A Baltimore Expert: After-School Activity Ideas
There are so many after-school activities out there that it can be overwhelming to pick a few to partake in. Enter Jill Berry. Jill is Baltimore mom and blogger who writes about after-school activities ideas for the Baltimore Examiner and on her blog — Musings from Me: Seizing Family Time.
Best Kids' Martial Arts Classes In Baltimore
Martial arts makes for an excellent activity for children for many reasons. It provides exercise and fitness, teaches discipline and self-control, helps with balance and coordination, and gives your child a skill that may become useful in the future.
Valentine's Day Arts And Crafts To Make With Kids
Work together with your child to create homemade gifts for others.
Best Fitness Classes In Baltimore
If your New Year's resolution was to get in shape, here's a list of trendy, unique, bust-your-butt workouts to start signing up for.
Best Places To Take Family Photos In Baltimore
When one thinks of Baltimore, it is not the location of iconic photography destinations like Mount Rushmore or the Grand Canyon, but there are a few photogenic gems that are not as well known but can still create a gorgeous surrounding for any photographic experience.
Neighborhoods With The Best Holiday Lights In The Baltimore Area
'Tis the season for egg nog, Christmas caroling, holiday parties and, of course, holiday light shows! The Baltimore area has a number of spectacular holiday light shows.
Best Places To Cut Your Own Christmas Tree In The Baltimore Area
Heave and ho ho ho your own tree from one of these top Christmas Tree farms this year.
How To Host The Perfect Gingerbread House Competition
Add a sweet competitive element to your holiday gathering.
Best Free Winter Activities For Families In Baltimore
Baltimore is a diverse city full of fun activities – some of them completely free. You just have to know where to look. We've done the looking for you, and here are our picks for things the entire family can go out and do in the winter weather without spending a dime.
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Best Winter And Holiday Activities
We have brainstormed the best winter activities to keep you entertained.
View our best Halloween costume ideas for babies, kids and adults.


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35 year old woman | Blue Ash, OH, USA | Seeking men 32-38 within 50 miles of Cincinnati, OH
Haven't decided to pay for the site yet... says I have some emails, sorry can't read 'em cincinnati geek Google server no spaces
I'm an IT nerd who works all of the time. I spend my free time taking my 2 spoiled dogs to the park. I love music and live shows. Looking for someone who is smart, and loves animals especially doggies! I love my free time, but would also enjoy spending time with someone who shares the same interests. To dig a little deaper I'm only on this site because of the continuous commercials and one bored night. I'm not actively seeking to find someone; however, if the right one is on this site... I am not like most women, I am not afraid to get my hands dirty. I'm a super hard worker and believe everyone should always work and play hard. You only live once. Most of my friends are men I seem to get along with them better than women. Most people would describe me as a b**ch but my friends would tell you I'm actually very sensitive. My family is the most important thing in the world to me. I actually have a tattoo that's hex code and spells family. (Side note men with arm tattoos yum!) Lastly, I have firomyailgia. It greatly affects my life and what activities I am ale to participate in.
Camping , Business networking , Music and concerts , Exploring new areas , Playing cards , Travel/Sightseeing
Billiards / Pool, Bowling, Soccer, Yoga
I exercise 5 or more times per week.
I have Dogs
I like Fish, Horses
I have 2 spoiled jack Russell's!
I don't have favorites but there are places I've been that I'd like to revisit with someone fun...vegas, niagra falls, grand canyon and I'd love to take another Caribbean cruise.
i love all music, by music I mean music, not crap. Some favorites : metallica, ccr, pantera, cash, hank 1,2 & 3, waylon, Merle, well you get the point.
i like to shoot pool, go to live shows (hole in the wall bar bands are the best) I take my spoiled dogs t the dog park every weekend. Walking on the treadmill is my newest hobby. Great stress relief! I am a computer nerd!
Fight club was the last book. I read computer articles /websites daily - lifehacker,cnet, gizmodo etc.
Z{{Cta}} {{#if HasMoreInfo}} ?{{CtaSecondary}} {{/if}}
|What she is looking for
|5'2" (157cms)
|5'6" (167cms) to 6'11" (210cms)
|Body type:
|About average
|About average
|No preference
|Auburn / Red
|Social Drinker
|Technical / Science / Computers / Engineering
|Executive / Management, Financial / Accounting / Real Estate, Legal, Medical / Dental / Veterinary / Fitness, Self-Employed / Entrepreneur, Education / Teacher / Professor, Technical / Science / Computers / Engineering, Law enforcement / Security / Military
|I'll tell you later
|$50,001 to $75,000, $75,001 to $100,000, $100,001 to $150,000, $150,001+
|No preference
|Have kids:
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|Not sure
|No preference
|White / Caucasian
|White / Caucasian
|Agnostic, Atheist, Spiritual but not religious
|High school
|Some college


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Cal Ripken Jr. mulling return to MLB
Updated: October 9, 2013, 1:54 PM ETESPN.com news services
Cal Ripken Jr. has the "itch" to return to Major League Baseball -- perhaps as a manager.
Ripken said during a recent interview with Rich Eisen of the NFL Network that he would be open to managing in the majors.
A Hall of Famer with the Baltimore Orioles, Ripken has spent the past 12 years running his company, Ripken Baseball Inc., since retiring as a player after the 2001 season. He also has worked as an analyst for TBS Sports during the postseason.
During his ...
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An Introduction to Science and Technology StudiesPaperback
Free delivery worldwide
Dispatched in 2 business days
When will my order arrive?
- Publisher: Wiley-Blackwell (an imprint of John Wiley & Sons Ltd)
- Format: Paperback | 256 pages
- Dimensions: 150mm x 226mm x 15mm | 363g
- Publication date: 6 November 2009
- Publication City/Country: Chicester
- Edition: 2, Revised
- Edition statement: 2nd Revised edition
- Sales rank: 177,947
Product description
An Introduction to Science and Technology Studies, Second Edition reflects the latest advances in the field while continuing to provide students with a road map to the complex interdisciplinary terrain of science and technology studies. * Distinctive in its attention to both the underlying philosophical and sociological aspects of science and technology* Explores core topics such as realism and social construction, discourse and rhetoric, objectivity, and the public understanding of science * Includes numerous empirical studies and illustrative examples to elucidate the topics discussed* Now includes new material on political economies of scientific and technological knowledge, and democratizing technical decisions* Other features of the new edition include improved readability, updated references, chapter reorganization, and more material on medicine and technology
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Author information
Sergio Sismondo teaches Philosophy and Sociology at Queen's University, Canada. He is the author of Science Without Myth: On Constructions, Reality, and Social Knowledge (1995), The Art of Science (with Boris Castel, 2003), and numerous articles on subjects ranging from computer simulation to pharmaceutical research.
Review quote
Praise for first edition "For an introduction to science and technology studies, one cannot find a better book. Sismondo sets a high standard for clarity of writing for books aimed at university students. The important historical background blends well with the underlying philosophical and sociological concepts. Extremely important to all readers are the boxed-text case studies, definitions, and examples that permeate and intelligently adorn every chapte. The index and references immensely help readers desiring to learn more." (Choice, November 2003) "Carefully argued and well balanced...topics are handled with a clarity and lightness... overall impression...of a field with solid foundations that is looking to the future." (ISIS)
Back cover copy
Distinctive in its attention to both the underlying philosophical and sociological aspects of science and technology, the second edition of this popular textbook provides students with an up-to-date road map of the complex interdisciplinary terrain of science and technology studies. After presenting the broad historical background to the field, the book explores a variety of relevant topics, among them realism and social construction, discourse and rhetoric, objectivity, and the role of experiment and theory. Numerous illustrative examples and empirical studies elucidate such topics as nuclear missile testing, the cold fusion controversy, teaching mathematical physics in the 19th century, digital rights management, pharmaceutical clinical trials, and sick building syndrome. This updated, expanded, and reorganized new edition also now includes new material on political economies of scientific and technological knowledge and the democratization of technical decisions.
Table of contents
Preface vii 1 The Prehistory of Science and Technology Studies 1 2 The Kuhnian Revolution 12 3 Questioning Functionalism in the Sociology of Science 23 4 Stratification and Discrimination 36 5 The Strong Programme and the Sociology of Knowledge 47 6 The Social Construction of Scientific and Technical Realities 57 7 Feminist Epistemologies of Science 72 8 Actor-Network Theory 81 9 Two Questions Concerning Technology 93 10 Studying Laboratories 106 11 Controversies 120 12 Standardization and Objectivity 136 13 Rhetoric and Discourse 148 14 The Unnaturalness of Science and Technology 157 15 The Public Understanding of Science 168 16 Expertise and Public Participation 180 17 Political Economies of Knowledge 189 References 205 Index 236


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37 year old man | Pasadena, CA, USA | Seeking women 26-46 within 50 miles
Active within 24 hours
Catch -A- Dream
I have worked really hard in my life to become who I am..Being successful to me means having the freedom to do what I want...which of course is having time to hang out with you.My life policy is based on integrity and loyalty.Traveling is my passion.I was recently in Caribbean Islands.The color of the ocean out there was very pretty but tasting the cultural drinks of the local people was a lifetime experience.Sports have always been a huge part of my life.Nothing is more exciting than watching a Lakers playoff game with a bunch of crazy fans and yelling for a touchdown with friends at a local dive bar.On the weekends I enjoy playing tennis and soccer with my friends.I love watching movies at Laemmle's in Pasadena. It is a great place to watch a wide variety of good quality movies.For me, special times include having a BBQ with my family and spending time with my friends. I value a good balance between work and the rest of what life has to offer. I am looking for someone who can share my passion for traveling and playing sports.She is an optimist at heart and is open to sharing new adventures with me as we travel down the road of life together.I hope that she can share my love for movies and books.Life is always more fun when you have the right person by your side to share a good bottle of wine with.Basically, I am looking for my best friend; someone who is grounded and can share my point of view on life
Book club , Camping , Coffee and conversation , Cooking , Dining out , Movies/Videos , Music and concerts , Performing arts , Playing sports , Political interests , Travel/Sightseeing , Watching sports , Wine tasting
Basketball, Football, Running, Soccer, Swimming, Tennis / Racquet sports, Walking / Hiking
I exercise 1-2 times per week.
I like Dogs, Horses
Very Liberal
I like going to Las Vegas or San Fancisco on the long weekends.
My favorite colors are black and purple.They signfy the integrity and elegance for me.My favorite book is War and Peace.I am a huge fan of Leo Tolstoy.
Movies,hang out with my friends,play tennis and soccer ,take short trips, play board games,traveling ,go out for dinner and try different dishes...
Open : An Autobiography by Andre Agassi
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|What he is looking for
|5'11" (180cms)
|5'1" (154cms) to 6'2" (187cms)
|Body type:
|Athletic and toned
|No preference
|No preference
|No preference
|No Way
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|Social Drinker
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|Sales / Marketing
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|$100,001 to $150,000
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Historically a nation of immigrants, the United States is home to nearly 41 million immigrants, who represent 13 percent of the total population and play a key role in the economic, civic, and cultural life of the country. The research collected here covers many facets of immigration to the United States, by the numbers and how immigrants fare in the country's classrooms and workplaces, the policies and regulations that shape the admission of new immigrants, the enforcement programs and polices in place at U.S. borders and within the interior, and integration policies and efforts taking place in local communities, in states, and at the federal level.
Nearly 2 million of the 4 million-strong Vietnamese diaspora live in the United States, with many having come in the immediate aftermath of the Vietnam War and during the long-running Indochinese refugee crisis. With April 30 marking the 40th anniversary of the fall of Saigon, learn more about the Vietnamese diaspora in the United States and Vietnam's contemporary and historical migration experience.
An estimated 41.3 million immigrants lived in the United States in 2013, about 13 percent of the total U.S. population, constituting the world's largest foreign-born population. This Spotlight from MPI's Jie Zong and Jeanne Batalova offers the most current and sought-after data on immigrants in the United States—including origin, educational attainment, the unauthorized, deportations, and more—in one easy-to-use resource.
MPI has compiled in one easy-to-access location its key research and data resources on issues, policies, enforcement programs, and more that relate to the immigration reform debate underway in Washington.
Court Rules Secret Deportation Hearings Unconstitutional... Major Changes to Board of Immigration Appeals... New LPRs Break One Million Mark... U.S., Canada Agree to Final Draft of Safe Third Country Agreement... Refugee Admissions Fall Below Target... President Signs Child Status Protection Act...
INS Commissioner to Resign... Requirement for Change of Address Notification... Social Security Changes Affecting Immigrants... H-1B Numbers Reflect Slowing Economy... Identifying Detainees Delayed...
As the U.S.-born children of Latino immigrants reach adulthood, new data suggest that they will fare better than their immigrant peers. Richard Fry, Senior Research Associate at the Pew Hispanic Center, explains why.
Resolving complex legal, social, and security issues after Sept. 11 will not be easy. But what does immigration have to do with it? Muzaffar Chishti, MPI Senior Policy Analyst, explains.
The Personal Responsibility and Work Opportunity Reconciliation Act (PRWORA) of 1996 dramatically reformed the nation's welfare system. MPI's Amanda Levinson takes a closer look at how these changes affected immigrants.
The search yielded 0 results


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Have we discussed? All the talk of restoring limbs to amputees got me wondering who believes in faith healing now.
Faith Healing
Yeah, this is a great question.
I'm not a Christian, so I can't answer it. Ants, do you believe in faith-healing? The restored-limbs kind? The cure-paralysis kind?
Mother to Beatrix 01/18/11
Can't say that I believe it.
Two roads diverged in a wood, and I, I took the one less travelled by, and that has made all the difference. - Robert Frost
in the traditional sense of the phrase- laying of the hand, turning away from modern medicine, miracle cures- no.
In terms of using prayer/meditation/positive thinking in conjunction with established or even experimental or alternative medical practices, I fully support. besides the benefit of calming the patient and or family, which is more psychological than anything else (but definitely has a positive effect on the healing process) I believe that prayers are answered. Sometimes the answer may be 'no' (such as the daughter/sister of a local family who recently died in England 6 wks after giving birth to her 6th child) but prayer never hurts.
Ima to Netanel Yeshaya Moshe 6/11/04 and Leah Tova Ruth 6/25/09
Nah. Kinda creeps me out what I've heard of it. All those convulsions and general freak outs don't seem holy or the right kind of awe-inspiring.
I remember my cousin was being admitted to the hospital for cancer treatment. The admissions guy, who himself was in a wheelchair, asked to pray on her behalf. She said sure as she had no affiliation with any church it didn't bother her. He prayed for Jesus to take away her cancer as you do. When he was finished he told her that was it, she was cured. Unfortunately my cousin passed away not long after that.
Ima, ITA about the effects of a positive attitude.
All throughout the NT we read of healing. Each time faith is a factor.
I am a firm believer in that the ultimate healing is death. I have seen Jesus heal. I have seen Him perform healing, you know the kind that leaves NO explanation.
I am trying to find some articles, but I know in the M.E there are some miracleous wonders going on right now, heard about it on a missionary radio program.
Anywho, do I believe in the slap you in the head and scream in your ear you are healed..NO, do I believe in men who take peoples money in the name of healing NO...do I believe Jesus in His Glory still heals today YES.
Debbie ~
"We cannot un-see what we have seen...." ~ Margot Franssen
Miracle cures and restoring limbs and all that- no.
I'm a BIG believer in the power of positive energy, whether it's from prayer, meditation, spellwork, whatever. Positive energy will give you a positive attitude, and the positive attitude helps you to heal faster.
"The bench used to be a rare and fun place. �Now it is a destination." ~ Furry
Girlfrog (09/08) and Boyfrog (12/09)
For those who don't believe in miraculous faith healings (like the regrown limbs or curing paralysis or whatever), what is your take on the bible verses that are pretty clear that God is the great physician and if any among you are sick you should pray for his/her healing? Just curious which scriptures you use to help you formulate your belief on faith healing.
Mother to Beatrix 01/18/11
Sorry to be rude but I don't understand how you actually saw Jesus heal people? He physically lived on earth over 2000 years ago.
~Human Being, Canadian, Wife, Mother, Jew, Mentor and Mentee
Not rude at all Nenni.
HA! I wish I would have "seen" Him personally. I have a dear friend whose LO was diagnosed with some childhood cancer in his shoulder. The tumor was huge! He received TWO opinions with each research hosptial doing their own testing. His surgery and treatment was scheduled at Riley's Children Hospital in Indy. The day of his surgery one last MRI was done, the tumor was gone. No explanation given other than one doctor humbly admitted nothing short of a miracle.
Debbie ~
"We cannot un-see what we have seen...." ~ Margot Franssen


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At JC Whitney, we offer the best selection of Pontiac Deluxe Model 8DA Transmission Parts parts and accessories. We offer an industry leading 30-day Guarantee so that you can shop with confidence! Narrow your selection below by providing the year of your vehicle for a custom list of Pontiac Deluxe Model 8DA Transmission Parts products.2 out of 2 products in Transmission & Drivetrain
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BD Diesel Universal Torque Converter Lock Up Kit (Remanufactured). Intended for high output or exhaust brake equipped applications. Main... Read more
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Free stuff! Open Access & Creative Commons
Once upon a time, librarians curated what were usually called "picture collections." These were files (actual paper files!) filled with pictures clipped from other sources that the librarians knew could be reused in articles and publications- hence the origin of the term "clip art." When an author was working to pull together a publication, he or she would mosey over to the library or archives and work with this curated picture collection.
Then the internet happened. The wealth of images available online has created a minefield of intellectual property and academic ethics issues. Just because you can view content online for free (whether it be photos on Flickr or a copy of someone's thesis) does not mean you can download, remix, reuse, sell commercially, or do anything you want with it. Content creators have rights.
Creative Commons licenses are a component of the open access toolkit that allows authors and creators to share their content while maintaining some important essential and creative rights to their works. In other words, issuing work under a CC license gives you the ability to freely share your work, under terms that you dictate. This differs from the public domain, which dictates that nobody owns a piece of content, and is a matter for another blog post, another day.
There are six Creative Commons licenses, which offer differing levels of reuse permission (the most common restrictions involve changing or adapting images, and making money from the reuse of images). CC has a handy tool to help creators determine what sort of license they would like to use.
When it comes to finding images licensed under Creative Commons, there are several great resources to visit and tricks to use to find images for your posters, presentations, and publications.
I suggest starting with Flickr. After you execute a search you can limit your results to Creative Commons only, as well as images that allow commercial reuse and modifications:
Once you've done that, you can view the specific rights for any image by clicking the Rights link (this also tells you what you are allowed to do with an image):
Google Images allows a similar search limit. After you search, select your parameters under the "Usage Rights" menu:
With all Creative Commons works, you are expected to attribute the creator and source (at the very least), and CC has a great guide to Best Practices for Attribution.
This is just a quick introduction to Creative Commons resources. If you have any questions, please contact us at email@example.com. Even better, attend our upcoming Open Workshop on October 30 at noon, "But I Found it Online!" Proper Use and Attribution of Images for Papers, Posters, and Presentations." Click here for more details and to register!
Determining Your Rights for Self-Archiving Published Works
Here's a guest post from our E-Resources and Serials Librarian, Jane Natches:
Have you thought about posting your published work to your own website or your institution's open access repository but are concerned you will be in violation of the copyright agreement you signed with the publisher?
Copyright agreements can be intimidating but there is a tool that can help you begin to understand what rights you do have for archiving your works. SHERPA RoMEO is a database of publisher's copyright policies presented in clear and understandable language. It is intended for use by the academic research community and is easily searchable by journal title, ISSN, or publisher name.
The trick to using SHERPA RoMEO is to first determine what version(s) of your work you currently retain because publishers often have different archiving rules based on versioning.
The pre-print is the final version of your article submitted for peer review / refereeing.
The post print is the version you submitted after addressing comments from the peer review / refereeing process.
The publisher's version is the final post print dropped into the publisher's layout. It often includes page numbers, logos, and print registration marks and is usually in PDF format.
You may be surprised by what your standard copyright agreement allows. Many well-known publishers allow the post print to be posted to an author's personal website or an open access institutional repository without any embargo. Additional requirements tend to be fairly simple and often include acknowledging the published source and providing a link to either the journal home page or the article's DOI (digital object identifier).
Give it a try and see what you find!
Happy Open Access Week 2014!
This week, October 20-26th, is International Open Access Week. Here at the Tufts Libraries, we decided to take this opportunity to highlight the scholarly publishing related workshops we are hosting during the month of October. In particular, be sure not to miss…
Field Guide to Spotting Predatory Publishers
Wednesday, October 22, 2014 – noon to 1:00pm
Location: Sackler 510
Advice from the Experts: Inside Scientific Publishing
Wednesday, October 29, 2014 – 10:30 to 1:30pm
Location: Sackler 607 (pizza lunch included, so be sure to register)
"But I Found it Online!" Proper Use and Attribution of Images for Papers, Posters, and Presentations
Thursday, October 30, 2014 – 12:00pm to 1:00pm
Location: Sackler 510
Open Peer Review in STEM with Dr. Cesar Berrios-Otero, Outreach Director, Faculty of 1000 Research
Thursday, October 30, 2014 – 2:00pm to 3:00pm
Location: Tisch Library Austin Room, Medford Campus
Curious to find out more about open access? Check out the Tufts Scholarly Communication website and watch this space! We'll be posting something Open Access-related each day this week.
In this TUSM faculty development program, walk through the decision making process for several real-life scenarios encountered by authors and instructors when using their own work and the works of others in publishing and teaching. Following an overview of key concepts and terms, participants will utilize case studies to address common copyright questions that arise when uploading content in course management systems (e.g., TUSK), publishing manuscripts, sharing materials with colleagues, utilizing multimedia, and more. A handout of resources will provide participants with a guide for how to approach these situations post-workshop and where to go for assistance (hint: come to the library!).
Join us for this library-led workshop on Tuesday, March 11, 2014, 10 am – noon in Sackler 329. For more information, check out the Faculty Development Calendar and please RSVP to email@example.com by Monday, March 3.
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A shallow trench isolation is disclosed wherein the trench depth is reduced beyond that achieved in prior art processes. The reduced wench depth helps to eliminate the formation of voids during the trench refill process and provides for greater planarity in the final isolation structure. Effective device isolation is achieved with a reduced trench depth by utilizing refilling dielectric materials having low dielectric constant.
1. A process for isolating devices on a semiconductor substrate comprising the steps of:
removing predetermined portions of the semiconductor substrate forming recesses therein; and
refilling the portions of the semiconductor substrate with a material comprising an in situ doped silicon oxide complex, the material having a dielectric constant lower than the dielectric constant of undoped silicon dioxide.
2. The process of claim 1, wherein the step of removing portions of the semiconductor wafer comprises forming trenches in the semiconductor wafer.
3. The process of claim 2, wherein the trenches have a depth of less than 200 nm.
4. The process of claim 3, wherein the trenches have an aspect ratio of less than 2:1.
5. A process for isolating devices on a semiconductor substrate comprising the steps of:
removing predetermined portions of the semiconductor substrate forming recesses therein; and
refilling the portions of the semiconductor substrate with a material having a dielectric constant lower than the dielectric constant of silicon dioxide,
wherein the material having a dielectric constant lower than that of silicon dioxide comprises a halide-doped silicon dioxide composition.
6. The process of claim 5, wherein the halide-doped silicon dioxide complex comprises a Fluorine-doped silicon dioxide complex.
7. The process of claim 1, wherein the refilling material has a dielectric constant less than about 3.9.
8. The process of claim 1, further comprising forming a barrier layer over the semiconductor substrate prior to the step of refilling portions of the semiconductor substrate.
9. The process of claim 8, wherein the barrier layer comprises a silicon dioxide composition.
10. The process of claim 8, wherein the barrier layer comprises a silicon nitride composition.
11. A method of reducing the formation of voids in a refilled trench isolation process comprising the steps of:
forming trenches having an aspect ratio less than 2:1;
refilling the trenches with an insulating material; and
halide-doping the material.
12. The method of claim 11, wherein the trenches have a depth of less than 200 nm.
13. A method of reducing the formation of voids in a refilled trench isolation process comprising the steps of:
forming trenches having an aspect ratio less than 2:1; and
refilling the trenches with a material having a dielectric constant less than the dielectric constant of silicon dioxide,
wherein the refilling material comprises a Fluorine-doped silicon dioxide composition.
14. The method of claim 11, wherein the halide-doped material has a dielectric constant of less than about 3.9.
15. The method of claim 1, wherein the material comprises a halide-doped oxide.
16. The method of claim 1, wherein the material comprises a fluoride-doped oxide.
17. The method of claim 11, wherein refilling the trenches comprises depositing silicon dioxide.
18. The method of claim 17, wherein depositing silicon dioxide comprises a chemical vapor deposition.
19. The method of claim 18, wherein halide-doping the material comprises in situ halide doping during chemical vapor deposition of the material.
20. The method of claim 11, wherein doping the material comprises introducing a halide into the material while refilling the trenches.
21. The method of claim 11, wherein the halide comprises fluorine.
22. A process for isolating devices on a semiconductor substrate comprising the steps of:
forming trenches within the substrate;
lining the trenches with a diffusion barrier;
refilling the trenches with silicon dioxide; and
halide-doping silicon dioxide.
The invention relates generally to silicon integrated circuit design and process technology. In particular, the invention pertains to trench isolation process technology.
Implementing electronic circuits involves connecting isolated devices through specific electronic paths. In silicon integrated circuit fabrication it is necessary to isolate devices from one another which are built into the same silicon matrix. They are subsequently interconnected to create the desired circuit configuration. In the continuing trend toward higher device densities, parasitic interdevice currents become more problematic, thus isolation technology has become one of the most critical aspects of contemporary integrated circuit fabrication.
Over the last few decades a variety of successful isolation technologies have been developed to address the requirements of different integrated circuit types such as NMOS, CMOS and bipolar. In general, the various isolation technologies exhibit different attributes with respect to such characteristics as minimum isolation spacing, surface planarity, process complexity and defect density generated during isolation processing. Moreover, it is common to trade off some of these characteristics when developing an isolation process for a particular integrated circuit application.
In metal-oxide-semiconductor (MOS) technology it is necessary to provide an isolation structure that prevents parasitic channel formation between adjacent devices, such devices being primarily NMOS or PMOS transistors or CMOS circuits. The most widely used isolation technology for MOS circuits has been that of LOCOS isolation, an acronym for LOCal Oxidation of Silicon. LOCOS isolation essentially involves the growth of a recessed or semirecessed oxide in unmasked non-active or field regions of the silicon substrate. This so-called field oxide is generally grown thick enough to lower any parasitic capacitance occurring over these regions, but not so thick as to cause step coverage problems. The great success of LOCOS isolation technology is to a large extent attributed to its inherent simplicity in MOS process integration, cost effectiveness and adaptability.
In spite of its success, several limitations of LOCOS technology have driven the development of alternative isolation structures. A well-known limitation in LOCOS isolation is that of oxide undergrowth at the edge of the mask which defines the active regions of the substrate. This so-called bird's beak (as it appears) poses a limitation to device density, since that portion of the oxide adversely influences device performance while not significantly contributing to device isolation. Another problem associated with the LOCOS process is the resulting circuit planarity or lack thereof. For submicron devices, planarity becomes an important issue, often posing problems with subsequent layer conformality and photolithography.
Trench isolation technology has been developed in part to overcome the aforementioned limitations of LOCOS isolation for submicron devices. Refilled trench structures essentially comprise a recess formed in the silicon substrate which is refilled with a dielectric material. Such structures are fabricated by first forming submicron-sized trenches in the silicon substrate, usually by a dry anisotropic etching process. The resulting trenches typically display a steep sidewall profile as compared to LOCOS oxidation. The trenches are subsequently refilled with a dielectric such as chemical vapor deposited (CVD) silicon dioxide (SiO2). They are then planarized by an etchback process so that the dielectric remains only in the trench, its top surface level with that of the silicon substrate. The etchback process is often performed by etching photoresist and the deposited silicon dioxide at the same rate. The top surface of the resist layer is highly planarized prior to etchback through application of two layers of resist, and flowing the first of these layers. Active regions wherein devices are fabricated are those that were protected from etch when the trenches were created. The resulting structure functions as a device isolator having excellent planarity and potentially high aspect ratio beneficial for device isolation. Refilled trench isolation can take a variety of forms depending upon the specific application; they are generally categorized in terms of the trench dimensions: shallow trenches (<1 μm), moderate depth trenches (1-3 μm), and deep, narrow trenches (>3 μm deep, <2 μm wide). Shallow Trench Isolation (STI) is used primarily for isolating devices of the same type and is often considered an alternative to LOCOS isolation. Shallow trench isolation has the advantages of eliminating the birds beak of LOCOS and providing a high degree of surface planarity.
The basic trench isolation process is, however, subject to drawbacks, one of these being void formation in the trench during dielectric refill. Such voids are formed when the refilling dielectric material forms a constriction near the top of a trench, preventing flow of the material into the trench interior. Such voids compromise device isolation as well as the overall structural integrity. Unfortunately, preventing void formation during trench refill often places minimum size constraints on the trenches themselves, which may compromise device packing density or device isolation. For example, a key parameter measuring device isolation is the field threshold voltage between adjacent devices, that is, the voltage necessary to create a parasitic channel beneath a field oxide region linking adjacent devices. The field threshold voltage is influenced by a number of physical and material properties of the trench isolator such as insulator thickness, dielectric constant c, substrate doping, field implant dose and substrate bias. Thus, a principal difficulty in decreasing the trench depth is the compromise in device isolation. Clearly, it is highly desirably to develop a shallow trench isolation process which overcomes the problem of void formation while providing effective device isolation.
It is an object of the present invention to provide a trench isolation process which alleviates the problem of void formation during dielectric refill. It is another object of the present invention to provide a trench isolator having reduced dimensions, advantageous for device density and wafer planarity. It is a further object of the present invention to provide a shallow trench isolator having enhanced device isolation characteristics.
In accordance with one aspect of the present invention, a process for isolating devices on a semiconductor substrate comprises first removing portions of the semiconductor substrate, thereby forming recesses preferably having a trench profile. The trenches are then refilled with a material having a dielectric constant lower than the dielectric constant of silicon dioxide which is about 3.9. Using a low-εdielectric material allows the trench dimensions to be reduced while still providing effective device isolation characteristics. Preferably, the dielectric material comprises a halide-doped glass such as Fluorine-doped SiO2. To insure against device contamination, the invention further comprises forming a barrier layer over the trenches prior to refilling them with the low-εdielectric material.
In accordance with another aspect of the present invention, an isolation structure in a semiconductor substrate comprises a recessed trench formed in the semiconductor substrate and a material having a low dielectric constant filling the trench. The trench structure preferably has a depth less than 250 nm, and furthermore comprises a barrier layer disposed between the interior trench surface and the dielectric material. The dielectric material preferably has a dielectric constant lower than about 3.9, and may comprise a Fluoride-doped silicon dioxide composition.
In accordance with yet another aspect of the present invention, a method of reducing the formation of voids in a refilled trench isolation process comprises forming trenches having an aspect ratio less than about 2:1, and then refilling the trenches with a material having a dielectric constant less than the dielectric constant of silicon dioxide. The trenches preferably have a depth of less than 200 nm, and are refilled with a material comprising a Fluorine-doped silicon dioxide composition.
These and other aspect and attributes of the present invention will become more fully apparent with the following detailed description and accompanying figures.
FIGS. 1A-1C are schematic sections illustrating an exemplary shallow trench isolation process.
FIG. 2 is a schematic section of a trench refill having a void.
FIG. 3 is a schematic section illustrating an embodiment of the present shallow trench isolation process.
In accordance with the principles of the present invention, an improved shallow trench isolation technology utilizes a trench that is shallower than prior art trenches, and yet provides the same degree of device isolation. The shallower trench helps prevent the formation of voids during dielectric refill. However, despite the smaller dimensions of the present inventive trench, equivalent device isolation is achieved through use of a dielectric refill having a lower dielectric constant ε than in prior art isolation trenches. To better illustrate these inventive principles, a brief description of an exemplary STI process is provided first hereinbelow.
An exemplary STI process may comprise first a masking, patterning and dry etch process, producing trenches in the silicon substrate as shown in FIG. 1A. The semiconductor substrate 10 is masked and patterned to expose the regions of the substrate to be etched. The mask 12 may for example comprise a resist layer which is resistant to the dry anisotropic etch used to create the trenches. The mask 12 may be patterned by conventional photolithographic means to define the regions of the substrate 10 to have trenches formed therein. The trenches 14 are formed by an anisotropic dry etch, such as a plasma or reactive ion etch. A preferred characteristic of the trenches 14 is the steep sidewall profile as compared to conventional LOCOS processes.
After the trenches 14 are formed, the mask 12 is removed by selective etching or chemical mechanical polishing and the trenches are refilled with a dielectric material 16, as shown in FIG. 1B. A preferred dielectric refill material for STI is chemical vapor deposited silicon dioxide (CVD-SiO2) due to its high quality and excellent conformality. Conformality is particularly important because the refilled material must be supplied to fill trenches having relatively high aspect ratios (height:width>1).
Following the trench refill 16, the top surface of the substrate 10 is planarized by an etchback process, typically also performed using a chemical/mechanical polish. Prior to etchback, the substrate 10 may be coated with a layer of photoresist (not shown) in order to provide a planar surface with which to begin the etchback. The etchback itself provides a planarized substrate surface 18, having dielectric material 16 filling the trenches 14 up to and level with the top surface 18.
As shown in FIG. 2, a common problem associated with trench refill isolation is the formation of voids in the trenches. During refill of the trench 14 with dielectric material 16, the trench 14 often becomes constricted near the top of the trench, thereby preventing complete refill of the trench, resulting in a void 20. The void 20 lowers the isolation characteristics of the refilled trench in addition to introducing structural instabilities in subsequent processes. Increasing the trench width can alleviate void formation, however it also undesirably decreases device density.
In accordance with the principles of the present invention, void formation is alleviated by decreasing trench depth. Utilizing shallower trenches decreases the possibility of void formation and favorably increases surface planarity of the final refilled trench structure. For example in a typical DRAM application, a trench in accordance with the present invention may have dimension of approximately 200 nm deep and 250 nm wide while prior art trenches typically have dimensions of approximately 275 nm deep and 350 nm wide. However, as is well known in the art, a key parameter measuring device isolation is the field threshold voltage between adjacent devices, that is, the voltage necessary to create a parasitic channel beneath a field oxide region linking adjacent devices. The field threshold voltage is influenced by a number of physical and material properties of the trench isolator such as insulator thickness, dielectric constant ε, substrate doping, field implant dose and substrate bias. Thus, a principal difficulty in decreasing the trench depth is the compromise in device isolation.
To circumvent this problem, the shallow trench isolation of the present invention maintains effective device isolation in a shallower trench by utilizing dielectric materials having a lower dielectric constant than used in the prior art. For a given trench geometry, the field threshold voltage is a decreasing function of the field dielectric constant. Thus, to compensate for smaller trench dimensions, the present invention utilizes dielectric materials having lower dielectric constant. A possible dielectric material is a low index glass such as a halide-doped silicon dioxide, deposited by introducing the halide during CVD of silicon dioxide. For example, F:SiO2 possesses a dielectric constant of approximately 3.2, while typical CVD-SiO2 has a dielectric constant of about 3.9. Use of such materials allows a relative decrease in trench depth by about 20%.
Fluorine or other elements comprising a reduced dielectric constant material may however cause deleterious effects on neighboring devices if they diffuse into adjacent active areas. Therefore, a preferred embodiment of the present invention also incorporates a diffusion barrier layer lining the trench so as to prevent dopant migration into the silicon substrate. Use of a preferred barrier layer in the form of a grown oxide or nitride film, or a deposited stoichiometric or non-stoichiometric oxide or nitride film inhibits contamination of the isolation field-effect transistor, thereby preserving desirable characteristics such as a high threshold voltage. The integrated devices subject to isolation are also protected by the barrier layer from contamination.
In accordance with the aforementioned principles, a preferred shallow trench isolation may for example comprise the following process steps illustrated in FIGS. 3A-3D. As shown in FIG. 3A, the silicon wafer 10 is first covered by a mask 12, such as a resist or silicon oxide/nitride bilayer, and then patterned and etched to define the field isolation regions. The wafer is then subject to a dry anisotropic etch such as a halide plasma complex, thereby forming the trenches 22 in the silicon substrate 10. As mentioned earlier, in comparison to the prior art trench isolation, the trenches of the present invention are about 200 nm deep, shallower than the prior art by about 20%.
As mentioned previously, to avoid contamination of substrate regions adjacent to the trenches 22, it is preferable to form a barrier layer 24 over the trenches 22 prior to dielectric refill as shown schematically in FIG. 3B. The barrier layer 24 may for example comprise a silicon oxide or nitride film grown in an appropriate ambient or a chemical vapor deposited oxide or nitride film at least 5 nm thick. The barrier layer 24 functions to prevent diffusion of dopants deposited during the subsequent dielectric refill process. Although in general nitride forms a superior diffusion barrier to oxide, the higher dielectric constant of nitride should be considered in the overall isolation structure. It may be for example, that oxide performs adequately as a diffusion barrier while having the advantage of a lower dielectric constant than nitride. Thus, barrier layer thickness and dielectric constant should be considered in the overall trench design.
A shown in FIG. 3C, the trenches 22 are refilled with a dielectric material 26 having a low dielectric constant ε of about 3.3. As mentioned previously, the use of a low dielectric constant material lowers the gate capacitance of the isolation field-effect transistor, thereby raising the threshold voltage. A CVD-SiO2 doped with a halide such as Fluorine is a presently preferred material.
To complete the trench structure, a planarizing step is performed as shown in FIG. 3D. A planarizing process may for example comprise depositing and reflowing a resist layer to attain a planar top surface, followed by an etchback procedure to remove material down to the substrate surface. While the planarizing process may proceed in accordance with well-known processes, the present preferred isolation is advantageous because the shallower trench structures and consequent thinner refilled layers allow for a greater degree of planarity.
Thus, the present invention provides several advantages over the prior art by avoiding cavities in the trenches, providing more effective device isolation using low-ε materials and having a greater degree of planarity in the final trench structure.
Although described above with reference to the preferred embodiments, modifications within the scope of the invention may be apparent to those skilled in the art, all such modifications are intended to be within the scope of the appended claims.
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IF THEY HAVE AN EYE.. or two.. IDK where I was going with that, I really just wanted to show off my cute eye patch and new head appliers.
Over at Alterego head appliers GALORE are in the works, here are just a few examples of how the skins translate over to the Mesh Project Heads! I would say very well indeed. All shown in the caramel tone they look soooo cute on my babydoll head! The one thing I love about head appliers, on any head, is that makeups always seem much clearer and higher resolution, so pretty! I also wore one of the cute Eye Patches available from Zombie Suicide, not only can it be a cute accessory, it's obviously meant to double as a weapon with those wicked spikes!
Short post today, Sunday has me whacked out! Roll on Monday (said noone, ever)


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This property allows you to book online with a credit card. After submitting a reservation request, the owner or manager has 24 hours to accept, at which time your card will be charged and you will receive an email confirmation
Recent Sheboygan reviews
"So relaxing. Everything you need is there in little cottage. The fire pit was the highlight as it cooled in the evening and we watched the glass like lake"Guest: Sally R. Date of Stay: June 2015 Review Submitted: June 18, 2015View listing
"Perfect, Perfect, Perfect! Words cannot express just how much all of us ladies enjoyed this home and surroundings. It was inviting, comfortable, relaxing and peaceful. It was a beautiful fall day. Some took a walk on the beach while others enjoyed sitting listening to the gentle waves and soaking up the sunshine. We could not have asked for a better stay. All would certainly like to come back again next year.."Guest: Mary Date of Stay: October 2014 Review Submitted: October 16, 2014View listing
"Our experience at this cabin was excellent! It had everything we needed and was well kept up. It is just a short walk to the lake, hiking trails and less than a block to a nice park for the kids. The kids loved the deer that visited the back yard every day! We stayed at the house for 2 months because we were new to the area. Everything worked out great! I would recommend the cabin to anyone who needs a place!"Guest: Chris Date of Stay: October 2014 Review Submitted: December 11, 2014View listing
"We wanted to get away from everything but each other and our dogs; and this was perfect! Great location to lake access, parks, hiking, and great restaurants. We can't wait to make this a yearly retreat!"Guest: Lucinda Date of Stay: May 2015 Review Submitted: May 24, 2015View listing
Featured Destinations: Destin Condo Rentals, Palm Springs Vacation Rentals, Bryson City Cabin Rentals, Wisconsin Dells Cabins


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Talk:Battle of Monterey
|This article is of interest to the following WikiProjects:
|A fact from this article was featured on Wikipedia's Main Page in the On this day... section on July 7, 2014.
Ridiculous assertion. This never was a battle. The article quite clear states so and an investigation of the logs by the Mexican commander will find likewise. Any shots fired were mostly likely a distraction, or diversion ordered by the governor. The governor had left town before the troops arrived and a note in the Encyclopedia of the Mexican-American War states:
(..)Captain Mariano Silva, the miltary commandant, reponded that he did not have the authority to surrender the town.
meatclerk 17:11, 1 September 2006 (UTC)
The "controversy" section needs to go - This article states that Sloat was not authorized to attack any portion of California. However, the article on Sloat states: "In 1844 he was appointed to command the Pacific Squadron, and in 1845, as tensions with Mexico grew, he was instructed to land in Alta California and claim it for the United States if war broke out." So, it seems like he was authorized. Or, perhaps this article is alluding that he was supposed to land troops and take california without fighting? Laughable notion, though it may be what actually transpired.
Something off here[edit]
I would look this up in my own copy of the source but unfortunately during my move it is in storage.
Were "The main forces available to the United States in California were the about 400-500 bluejacket sailors and U.S. Marines on board the five ships of the Pacific Squadron there." sent upon the "Speculating that war with Mexico over Texas etc. was very possible, the U.S. Navy" therefore just when did "had sent several additional naval vessels to the Pacific in 1845 and 1846 to protect U.S. interests there and prevent possible British action."
The, "On 26 May [year], Commodore Sloat received word of the Battle of Palo Alto and the Battle of Resaca de la Palma, upon which he sent a coded message to Secretary of the Navy George Bancroft that he was leaving for California." from where? "Sloat sailed on the frigate Savannah on 8 June, arriving Monterey on 1 July."
They joined the sloop USS Cyane which was already there." since when? "There were U.S. fears that the British might try to annex California to satisfy British creditors." whose debt, Mexico? "The British Pacific Station's ships off California were stronger in ships, guns and men."
I just love some of Bancroft's literary expressions one of which sticks to me like slushy snow that, as I paraphrase, rivers were established in places for cities. As if rivers had the responsibility to locate themselves for development.GinAndChronically (talk) 04:05, 16 July 2014 (UTC)
- Start-Class Mexico articles
- Unknown-importance Mexico articles
- WikiProject Mexico articles
- Start-Class California articles
- Mid-importance California articles
- WikiProject California articles
- Start-Class United States military history articles
- United States military history task force articles
- Start-Class military history articles
- Selected anniversaries (July 2014)


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If you want to try my working formula...
60ml dektol (stock solution)
5ml bromide (10%)
10ml freestyle's universal fixer (diluted 1:4)
You can probably omit the bromide if you want, I never tried without it. And the fixer has been used, but isn't exhausted. I'm guessing you can use fresh fixer, but you might want to cut back the amount a bit. Some clues to help fine tune the developer would be that if your image doesn't reverse (if it look like a negative) you'll need to add more fixer to your developer. Or if your image reverses, but it's very faint, reduce the amount of fixer. This developer does release ammonia gas because the fixer used is a ammonium thiosulfate fixer.
I'm redoing some old plates, and I found this developer poured onto my plates until the image appears, gets a nice golden-orange image. It usually takes 2-3 minutes for the image to appear. I keep a tray under my plate to catch the developer that falls, and pour it back on. This is enough developer for a full plate sized image (6.5"x8.5"). If you want an even development, you could fill a tray with it, just keep the proportions the same, but i never tried. I use the standard (cheapest) liquid light, but it is expired (2008).
I use film positives in the darkroom to make my plates. I expose my plates from 50 to 75 seconds, with my lens wide open (f/4.5) depending on the height of the enlarger.


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Some people are complaining because they can no longer share music to their iOS devices, while others say the iCloud Music Library is making a mess of their local iTunes library.
A loose underground society of record-lathe owners called the Secret Society of Lathe Trolls explores the lost art of cutting music into vinyl and plastic records.
A new version of Apple's mobile operating system and Beats 1 radio station is set to debut Tuesday morning, says former Beats CEO and current Apple exec.
Create the perfect playlist using Apple Music and share it with the world, or just a few friends. Your choice, really.
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The new service may not be a big moneymaker, says analyst Gene Munster, but Apple has other reasons for getting into the streaming music market.
NASA has created an album of sounds on Soundcloud, including rocket launches, recordings from space shuttle missions and even a song about water on the moon.


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1. Pour the water in a large pot and bring to a boil
2. Add 2 tbsp salt and vinegar then let boil for another 2 minutes
3. Place the intestine in the pot and wait until the liquid re-boils
4. Put-in the dried bay leaves and whole pepper corn then simmer for 40 minutes or until intestine is tender.
5. Remove the intestine from the pot then drain excess water
6. Cut the intestine according to desired length.
7. Sprinkle the remaining salt over the intestine. Make sure that it is evenly distrubuted over all the intestines.
8. In a separate pot/pan, pour the oil and heat until the temperature is good for frying
9. Deep fry the intestines. Make sure that the texture is crunchy before removing from the pot/pan
10. Serve with vinegar and chili pepper dip. Share and Enjoy!
For more information please visit: http://www.panlasangpinoy.com


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0 results found for Austria Stamps in Memphis, TN, so we expanded the radius.
2 Results for Austria Stamps in Memphis Tn - Antiques Classifieds
Nice 3 3/4" by 6 1/2" blue and white tray with boats, birds, and windmill. Signed M B W number 1210 has makers stamp M Z with logo. Nice piece to add to your collection Posted with eBay Mobile1 month ago on ebay.com
sheathed in acanthus leaves and swagged floral details. Two leafy arms extend from the center of the back plate, supporting decorative two-part bobeches. These wall lamps are in excellent condition and are stamped "Made in1 month ago on ebay.com
Results for Austria Stamps in Memphis, TN Antiques Classifieds


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View Poll Results: Airborne Tank, 20 person crew
- Voters
- 49. You may not vote on this poll
Results 1 to 11 of 11
March 26th, 2006 #1
IDW007: Airborne Tank, 20 person crew ( VOTING!!!! )
Topic: Airborne Tank, 20 person crew
Description: In 1988, The USSR commissioned their top Russian engineers to create two tanks that could take out a capital city's of france and poland. The tank was a behemoth of metal and firepower. The tank would be flown over a city and dropped within city limits-- The lone tank would have no back up and the sole mission of destroying all major political structures.
These tanks were never put into practice due to the fall of the USSR, but remain under control of Mother Russia to this day.
Your Job: Develop a tank that is possible to hold over 20 crewmen. The tank must be able to withstand a fall of at least 3km(1.9miles). The tank must have enough firepower to cause mass destruction.
Deadline: March 25th Midnightish
Hide this ad by registering as a memberMarch 26th, 2006 #2Registered User
- Join Date
- Feb 2006
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- 188
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- Thanked 33 Times in 23 Posts
Voted for Phaethon. I think the rendering is ok, a unique vector-y style, but I liked the concept of the treads sitting inside the outer wall. It seemed believeable and helped the visuals communicate the tank as being gigantic.
Kudos to Davi for a sweet rendering and thought process that fits the brief really well.
March 26th, 2006 #3Registered User
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- Feb 2006
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I think Davi's deals with the concept the best, so he got my vote. I think it could use a few more guns though...
March 26th, 2006 #4
Had to vote for Orion9282 - well thought out and looks menacing as hell
I think Setmonkey had an awesome concept going as well, too bad you couldn't finish.
And phaethon - your rendering is cool...
All in all, great batch of submissions here - gotta run now bye!
ohjay's sketchbook
So here we are but no cigar
idiots and electric guitars
You're hiding, keep riding
from acid to zen and back again
March 27th, 2006 #5
I voted for Orion9282
Davis was my other favourite, took me long to decide...I should have flipped a coin.
Good game all.
March 27th, 2006 #6
Voted for Orion9282 cause the design appear more resistent to be dropped and the tank is more 80´s russian styled (?). Phaethon´s design is very good too, missile launchers, treads protected and like thick armored body but where is the weapons for air attack or close ground attack?
March 27th, 2006 #7Registered User
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my vote goes to setmonkey I love his design and also the plain was very good! sad it wasn't rendered..
ohjay really cool but there was no info about the landing
Phaethon, psyloco, Sukhoi_Flagon, Fafnir
Don't build forts if you need to build a huge tank.. In some of those forts could live 500 people.. Also some of you have more guns then people.. so I think they don't suit for the subject.
cesaraguilar almost voted for you but I didn't liked your guns.. the render style was really cool!
Orion9282 Nice render but I think there are to many guns for just 20 people.. Also there's nothing about the landing
davi nice lading but not totaly my liking don't know why..
March 28th, 2006 #8
Wow, this weeks topic was a really tough one to pick a favorite! I really like all of them for different reasons...
my vote went to Orion9282 - the design seems realistic and the mood of the rendering seemed very military...
also big props to -
phaethon - I would love to see yours printed on a T-shirt
ohjay / setmonkey - sweet ID style renderings.
phyloco- really nice use of color and auxilery views to show function
davi - really dig how you rendered the metal, plus i would be scared as hell if i saw that tank falling from the sky!
April 1st, 2006 #9
April 5th, 2006 #10Registered User
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Hey all,
Thanks for the votes and positive response to the tank! I still think Phaethon's concept blows mine away...
April 8th, 2006 #11
man awesome results pity i didn't see this one, i'm really gutted as i love that era of miltary design, i love them all but i think that only half of you paid full attention to the brief. Phaethon,Fafnir,Sukhoi_Flagon and i'm not sure about Orion9282 just because its very difficult to scale it, they are great designs but part of the design was that they could be "airdropped" into these places, so they are just too big, even now there is nothing anywhere near big enough to deal with that kind of load capasity, i think setmonkey should have won on the grounds that he had the complete design covered, including the airdrop unit, thus his was the most convincing design and was most in the mindset of a concept designer, don't get me wrong i think the other designs are awesome but not quite relevent to the specified brief.


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NBC Universal (NBCU) has renewed its business systems contract with VCI Solutions. VCI Solutions' Orion Business System has afforded NBCU, a client since 2000, the opportunity to manage and streamline content across its entire operation. More specifically, Orion played an instrumental part managing NBCU's inventory in real time across multiple channels during the 2008 Beijing Summer Olympics.
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Spectra Logic and HauteSpot Networks Introduce Body-Worn Camera Video Surveillance Solution
Huge Ultra HD Display Lights Up Times Square


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You are here
Shrimp Chicken and Sausage Jambalaya
|Olive oil
|2 Tablespoon (Divided)
|1 Large, chopped to make 1 cup
|Celery stalks
|2 , chopped to make 1 cup
|Green bell pepper
|1 Large, chopped to make 1 cup
|2 Clove (10 gm), minced to make 1 teaspoon
|Boneless skinless chicken thighs
|1 1⁄2 Pound, cut in to chunks
|Bay leaf
|Brown rice
|1⁄2 Cup (8 tbs) (Uncooked)
|Chopped fresh thyme/1/2 teaspoon dried thyme
|1 Teaspoon
|Chopped fresh parsley
|1⁄4 Cup (4 tbs)
|Canned diced tomatoes in juice
|14 1⁄2 Ounce (1 Can)
|Andouille sausage
|3⁄4 Pound, sliced
|Large shrimp
|1 Pound, peeled and deveined
|2 Large, sliced to make 1/4 cup (Green Parts Only)
|Hot pepper sauce
|1 Teaspoon (Such As Tobasco, Or To Taste)
1. Heat 1 tablespoon of the oil in a large nonstick skillet. Add onion, celery, and bell pepper; cook, stirring frequently, until softened, about 7 minutes. Add garlic and cook until vegetables begin to brown and garlic is quite fragrant, 2 to 3 minutes longer. Transfer to a 4 1/2-quart or larger slow cooker.
2. Heat remaining tablespoon oil in skillet. Add chicken and cook until browned, about 3 minutes on each side. Transfer to slow cooker and add bay leaf, rice, thyme, parsley, tomatoes, and sausage, in the order listed.
3. Cover and cook until flavors are blended and rice and chicken are tender, 6 hours on low or 3 hours on high. Thirty minutes before the end of cooking time, gently stir in shrimp; cover and cook until shrimp are pink and opaque.


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I watched as each reached up to the press box, memento in hand.
If I can get quotes, get background, get color that nobody else has, then when I go back up to the press box I can write it up.
He ran to the second floor of the press box, where he was able to get a good angle of the coach from above.


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- Music
- 13307 San Pedro Avenue, San Antonio, TX, 78216
Resolution Revolution ZUMBATHON! Zumba for Charity!
Inspiration 4 Life - www.inspiration4life.org
Saturday, February 9, 2013 from 8:00 AM to 12:00 PM (PST)
1st Annual Inspiration 4 Life Resolution Revolution: ZUMBATHON!
February 9th, 2013 from 8AM to 12PM @ the San Antonio College Gyms
Join us! As we celebrate health, fun, and ZUMBA! Bring your family, your friends and your children to our FREE to the public health fair & dance the day away at our 1st Annual ZUMBATHON!
Event Features:
Inspiration 4 Life is a Community Based Organization and Media Outlet, dedicated to promoting healthy lifestyle education and providing Inspiration, Motivation, Transformation, Restoration and Hope with "All Aspects of Life" resources for all demographics in San Antonio and to those from around the World. We advocate and educate to those who struggle with obesity, health issues, low self-esteem, awareness issues, unemployment, homelessness, all types of abuse, finances, and so much more, with resources that contribute to a strong and healthy life as an individual or as a family unit. We serve as a Voice through our Radio, TV and Web Show Programs to over 76 Countries around the World, plus Hands on Action by Giving Back with our Free Health, Fitness, Wellness and more to the Communities of San Antonio. We are here to Impact, Save and Change Lives.
Visit us & learn more @ www.inspiration4life.org
In order to purchase these tickets in installments, you'll need an Eventbrite account. Log in or sign up for a free account to continue.


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Sharing my nursery pics!! :) share yours too!!!
Last edited 01/05/2013
Dawn (38) & Rob (45) Married 8/10/1996
Emily Fay 2/15/2008 Adopted
Ryan Wesley 1/22/2013 (after 12 years of infertility - SURPRISE!)
perkAB · Original Poster
Posted 01/05/2013
Love them!!!! :) now we just need our babies to make the rooms complete haha <3
Ashley.. 25 years old
Mama to Cameron James 7/28/10
Taylor Brooke born 1/23/13
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