A pneumatic tire having a noise damper, a method for manufacturing the same, and a method for fixing the damper to the tire are disclosed. The inner surface of the tread portion of the vulcanized tire is buffed, and the noise damper is fixed to the buffed inner surface, using a double-sided adhesive tape which has specific characteristics such as adhesive force, tensile strength, thickness, cold-resistant property, heat-resistant property and water-resistant property.

The present invention relates to a method for manufacturing a pneumatic tire having a noise damper, more particularly to a method for fixing a noise damper to the inner surface of a vulcanized tire.
In order to reduce a tire noise generated during running, a noise damper made of a sponge material and disposed in a tire cavity has been proposed, for example, as disclosed in Japanese patent application publication No. 2003-063208.
Such a noise damper prevents or interrupts resonances of the tire cavity, namely, vibrations of the air filled therein. Further, as the damper is adhered to the inside of the tread portion, vibrations of the tread portion can be reduced.
During running, the tread portion is deformed such that the part in the ground contacting patch becomes relatively flat whereas the remaining major part is generally cylindrical. Accordingly, the boundary between the flat part and the cylindrical part has a relatively small radius of curvature. The boundary having such small-radius-curvature moves relatively around the tire axis as the tire rotates. Accordingly, a damper fixed to the inner surface of the tread portion is repeatedly subjected to bending deformation and compressive and tensile strain.
Therefore, the noise damper potentially tends to separate partially from the tire during long-term use or under high-temperature or very cold service conditions.
On the other hand, double-sided adhesive tapes are now widely used in various fields as being a simple and easy way of fixation. But, a long-term use within a pneumatic tire is, for the double-sided adhesive tapes, yet an unknown category of usage, and a method for evaluating the double-sided adhesive tapes suitable for tires is not yet established.

Method for manufacturing low noise pneumatic tire


An object of the present invention is to provide a display device for a vehicle which assures that visual recognizability can be improved by using a circular disc-shaped pointer while the pointer and characters, calibrations or the like on a dial overlap each other. A circular disc-shaped pointer composed of a polarized plate and including a slit-shaped indicating portion radially extending from the central part and the outer peripheral part of the pointer is arranged in front of a dial composed of a polarizing plate and having characters, calibrations or the like placed thereon. In addition, a light source is arranged behind the dial so as to illuminate the pointer with the light beam emitted therefrom. A movement is disposed at the central part of the light source to turn the pointer. The polarizing direction of the dial and the polarizing direction of the pointer are determined such that the light beam emitted from the light source permeates through the limited region where the characters, calibrations or the like on the dial overlap the indicating portion 1a of the pointer.

The present invention relates generally to a display device for a vehicle. More particularly, the present invention relates to a display device for a vehicle wherein a pointer is constructed in the circular disc-shaped configuration including a slit-shaped indicating portion extending from the central part toward the outer peripheral part thereof, characters, calibrations or the like on a dial are covered with the outer peripheral part of the pointer, and the dial is illuminated with the light beam emitted from the backside of the dial.
Usually, a needle-shaped pointer or a circular disc-shaped pointer has been hitherto used as a pointer for, e.g., a speed meter, a tachometer or the like each adapted to display in the analogical manner. FIG. 15 is a perspective view which schematically illustrates by way of example a conventional display device for a vehicle including a circular disc-shaped pointer. The display device includes pointers 51 each of which is constructed of a circular disc-shaped plate having no light permeability, and each pointer 51 includes a slit-shaped indicating portion 51a which radially extends from the central part toward the outer peripheral part of the pointer 51. In addition, a dial 52 is arranged behind the pointers 51, and circular portions 52a each having light permeability and dimensions to substantially correspond to the circular shape of each pointer 51 are formed on the dial 52. Characters, calibrations or the like each having light permeability are placed around the outer periphery of each circular portion 52a.
In addition, a light scattering plate 53, a cathode tube 54, a reflective plate 55 and movements 56 for driving the pointers 51 are successively arranged behind the dial 52. When the cathode tube 54 serving as a light source is turned on, the light beam emitted from the cathode tube 54 directly reaches the light scattering plate 53 or it is once reflected from the reflective plate 55 and then reaches the light scattering plate 53. Thereafter, the dial 52 and the pointers 51 are illuminated with the light beam which has been irregularly scattered in the scattering plate 53. With such construction, the indicating portions 51a of the pointers 51 each having light permeability and the characters, calibrations or the like on the pointer 51 each having light permeability are brightly illuminated with the light beam. The display device including slit-shaped indicating portions on circular disc-shaped pointers as constructed in the above-described manner has a merit that a single light source serves not only for the dial but also for the pointer.
FIG. 16 is a fragmentary view which illustrates that the aforementioned display device is incorporated in an instrument panel 57 on a vehicle. In the drawing, reference numeral 58 designates a meter hood and reference numeral 59 designates a front glass. In addition, FIG. 17 is a diagrammatical view which illustrates from the front side the state that a light source for the display device is turned on. As is apparent from the drawing, characters, calibrations or the like are brightly illuminated with the light beam emitted from the light source so that they can clearly visually be recognized by driver's eyes.
Among many meters mounted on a modern vehicle, some of them have two separate light source systems, one of them being operable for illuminating a pointer and the other one being operable for illuminating a dial. In this case, calibrations are placed outside of characters, and a pointer is arranged such that it extends to the calibrations while overlapping the characters. As shown in FIG. 17, however, the foremost end of the indicating portion 51a reaches only the inside of the region where the characters, calibrations or the like are placed. For this reason, the indicating portion 51a of the pointer 51 cannot overlap the characters, calibrations or the like. Thus, there appear problems to be solved. Specifically, visual recognization is accomplished with much difficulties, and moreover, a degree of freedom of designing is restrictively determined.


A reformer furnace (1), comprising: at least one triple conduit assembly (200), including a flue gas conduit (220) enclosing a reaction conduit (240) enclosing a product gas conduit (260), wherein: the reaction conduit (240) extends between a lower end (244) defining a reaction gas inlet (245), and a closed upper end (242); the product gas conduit (260) extends between an upper end (262) defining a product gas inlet (263), and a lower end (264) defining a product gas outlet (265); the flue gas conduit (220) extends between an upper end (222) defining a flue gas inlet (223), and a lower end (224) defining a flue gas outlet (225); and an annulus (250) between the reaction conduit (240) and the product gas conduit (260) comprises a catalyst (252); a combustion chamber (100) that encloses an approximate upper half (226, 246, 266) of the at least one triple conduit assembly (200) while an approximate lower half (228, 248, 268) thereof resides outside of and below the combustion chamber, and that includes at least one burner (110), disposed inside of the combustion chamber and outside of the flue gas conduit (220), such that the approximate upper half (226) of the flue gas conduit substantially shields the reaction conduit (240) from direct burner flame heat radiation and impingement.

Steam reforming is a chemical process by which a hydrocarbon feedstock reacts with steam to form a product gas mixture comprising hydrogen and carbon oxides. The reaction, which is strongly endothermic, takes place in a reactor called a reformer furnace.
The reformer furnace may typically include a tubular reaction vessel containing a steam reforming catalyst through which the reactant mixture of hydrocarbons and steam (also called: mixed-feed) is flown. The reaction vessel may be wholly or partly disposed inside a combustion chamber of the reformer furnace fitted with a number of burners that combust fuel to produce the heat necessary to sustain the endothermic reforming reaction inside the reaction vessel. Heat may be transferred to the reaction vessel by radiant heat directly from the burner flames, or by convective heat from flue gases that flow past the vessel, either co-current or counter-current to the flow of reactant mixture inside the vessel.
A notorious problem with known reformer furnaces is that both the product gas and the flue gas may exit at relatively high temperatures. In the art various reformer furnace designs have therefore been proposed to improve the overall heat economy of the reforming process by recovering the sensible heat from both the product gas and the flue gas to drive the reforming process, so as to produce additional product gas. These reformer furnace designs, however, appear to leave room for efficiency improvements. Furthermore, they may typically be relatively complex and sizeable, making them costly to construct and maintain.

Steam reformer furnace, and method for the same


A partitioned storage tube for tip-ups and other ice fishing accessories including an elongated, cylindrical body partitioned into five separate tip-up storage compartments for storing and protecting tip-ups when not in use. A structure for protecting the tip-up reels is incorporated into the body. Elastic straps provide an adjustable means of securing a cover to the body. A cylindrical interior compartment is accessible through an access opening in the cover to store ice fishing accessories that may be longer than the tube. Drain apertures in the bottom of each tip-up storage compartment facilitate the removal of excess moisture. The storage tube is made of a durable plastic material so it could be used as a stool when standing upright with the cover on.

1. Field of the Invention
The present invention relates generally to storage containers and, more specifically, to a partitioned storage tube for tip-ups and other ice fishing accessories.
A tip-up is an ice fishing tool which has a vertical post with a signaling mechanism on top and a reel and line on the bottom. Once a hole is chopped in the ice a fisherman places the lower portion of the tip-up in the hole supported by a cross-bracing method to keep the reel submerged to prevent freezing. When a fish pulls at the line, the signaling method pops up to alert the fisherman that there is activity at the hole. Using tip-ups allows a fisherman to set up and monitor several lines simultaneously. Since more than one tip-up is generally used at a given time, the present invention addresses the difficulty of transporting several tip-ups at a time without damaging reels or tangling lines among other problems. The partitioned storage tube provides an organized, safe, and convenient means to store and transport all the equipment needed for ice-fishing in one container.
2. Description of the Prior Art
Partitioned storage containers are known in the art. For example, U.S. Pat. No. 4,628,628 (Burin, C., Dec. 16, 1986) discloses a fishing equipment holder with a elongated, cylindrical body with notched circular brackets running around the circumference. Fishing rods can be placed in the notches and secured by means of a rotatable, rigid outer band that maintains the rods within the equipment holder and an inner elastic band that secures the rods against the outer band. The patent shows that rods and reels are contained externally and therefore not protected. By contrast the instant invention provides a protective shell to prevent damage to tip-ups and their reels.
U.S. Pat. No. 5,207,321 (Jones, E., Jun. 23, 1992) discloses a portable storage device comprising a base having an upright forward wall, an upright panel supported on the base and a storage surface on the base between the forward wall and the panel. The forward wall is shorter than the panel allowing access to the storage surface. An elastic band encircles the panel to prevent stored items from falling over forward wall. The patent shows that stored items are contained externally and therefore not protected. By contrast the instant invention provides a protective shell to prevent damage to stored material.
U.S. Pat. No. Des. 382,707 (Wang, J., Aug. 26, 1997) discloses a golf bag with partitions for clubs. The patent does not show a cover, a reel retaining flange or a method of drainage. The instant invention provides all of the above.

Partitioned storage tube for tip-ups and other ice fishing accessories


A lithium-excess cathode material according to Li1+xNiaMnbCocModO2−y (0<x<0.3, 0≤a≤1, 0≤b≤1, 0≤c≤1, 0≤d≤0.2, 0≤y≤0.25) in the form of secondary spherical microparticles formed from primary spherical nanoparticles. The primary nanoparticles can in the range of ˜130 nm to 170 nm and the secondary in the range of ˜2-3 μm. A method of formation includes mixing a carbonates or hydroxides solution into a mixed solution of transition metal (M) ions with predetermined stoichiometry under stirring, and aging resulting transition metal carbonates or hydroxides at a predetermined temperature for period of time to produce primary nanoparticles of a predetermined size. A gas-solid interface reaction to uniformly creating oxygen vacancies without affecting structural integrity of Li-excess layered oxides is also provided.

Cathode materials with micrometer-sized spherical particles composed of nanoparticles are known to exhibit excellent electrochemical properties. Lithium transition metal layered oxide spherical particles can be prepared through a hydroxide or a carbonate co-precipitation process.
S. H Park et. al reported that Li1+x(Ni1/3Co1/3Mn1/3)1-xO2 cathode materials synthesized by a conventional co-precipitation method using a continuously stirred tank reactor can improve both physical and electrochemical performance to a large extent. "Physical and electrochemical properties of spherical Li1+x(Ni1/3Co1/3Mn1/3)1-xO2 cathode materials," Journal of Power Sources, 177 (2008) 177-183. The publication reported a uniform, spherical morphology via a coprecipitation using a continuously stirred tank reactor method. The publication also reported a second synthesis route that involved the use of an M3O4 (M=Ni1/3Co1/3Mn1/3) spinel compound, obtained from the carbonate (Ni1/3Co1/3Mn1/3)CO3 precursor. The publication states that both Li1+x(Ni1/3Co1/3Mn1/3)1-xO2 products were highly uniform, having a narrow particle size distribution (10-μm average particle size). This is attributed to the homogeneity and spherical morphology of the starting mixed-metal carbonate precursor.
A. Bommel et. al reported upon a growth mechanism of co-precipitated spherical and dense nickel, manganese, and cobalt-containing hydroxides, and the influence of aqueous ammonia on the co-precipitation reaction. "Analysis of the Growth Mechanism of Coprecipitated Spherical and Dense Nickel, Manganese, and Cobalt-Containing Hydroxides in the Presence of Aqueous Ammonia," Chemistry of Materials, 21 (2009) 1500-1503. The publication identifies the roles of pH, transition-metal type(s), and aqueous ammonia concentration as being most important in the synthesis of dense materials. Different pH ranges were identified for different metal hydroxides of Ni(OH)2, Ni1/2Mn1/2(OH)2, and Ni1/3Mn1/3Co1/3(OH)2. The publication attributed metal hydroxide particle growth to a dissolution-recrystallization type mechanism during synthesis.
D. Wang et. al reported upon a growth mechanism of co-precipitated spherical carbonate precursor for high capacity Li-ion battery cathodes and the pH zone that favors carbonate co-precipitation reaction. "Growth mechanism of Ni0.3Mn0.7CO3 precursor for high capacity Li-ion battery cathodes," Journal of Materials Chemistry, 21 (2011) 9290-9295. The publication reported that Transition metal carbonate (Ni0.3Mn0.7CO3) was co-precipitated as the precursor for Li- and Mn-enriched composite materials. An optimal pH range was reportedly determined based upon chemical equilibriums between the products and reactants. The publication reported that early stages of co-precipitation produced a nonhomogeneous particle size distribution and a nonhomogeneous chemical composition. The publication reported that about five hours were required for the co-precipitation to produce homogenous particle size and distribution, albeit with particle sizes greater than 30 μm.
The above publications are illustrative of co-precipitation methods for production of lithium transition metal layered oxide spherical particles that can be prepared through a hydroxide or a carbonate co-precipitation process. Generally, these traditional co-precipitation methods require delicate control of the concentration of precursors and ammonium hydroxide to obtain homogenous spherical precursors, and many only produce 20 or 30 μm or larger sized particles. The large particle size, however, may introduce several kinetic limitations during initial activation. In addition, such large size particles can crack during an initial charging process or during discharge/recharge, leading to capacity and voltage degradation over extended cycling. See, e.g., Chen et al., "Study on the synthesis-microstructure-performance relationship of layered Li-excess nickel-manganese oxide as a Li-ion battery cathode prepared by high-temperature calcination," Journal of Materials Chemistry A, 1 (2013) 10847-10856. The publication reported that internal cracks within these large size particles form even before any electrochemical cycling, which causes cycling degradation and might be a common problem encountered in the conventional precipitation-calcination process.
Additionally, in Li-ion cathode materials, oxygen vacancies have been investigated as potentially playing a role in determining the material's electron and ion transport properties. See, e.g., Armstrong, A. R. et al. "Demonstrating oxygen loss and associated structural reorganization in the lithium battery cathode Li[Ni0.2Li0.2Mn0.6]O2" J. Am. Chem. Soc. 128, 8694-8698 (2006); Koga, H. et al., "Different oxygen redox participation for bulk and surface: A possible global explanation for the cycling mechanism of Li1.20Mn0.54Co0.13Ni0.13O2", J. Power Sources, 236, 250-258 (2013). However, the introduction of high levels of oxygen vacancies by prior techniques is known to harm bulk material properties and provide less than high quality bulk material. Previous work by the inventors and collaborators has shown that oxygen vacancies generated during the high-potential electrochemical process can facilitate the migration and surface structural transformation of transition metals, finally leading to their potential degradation during extended cycles. Xu, B., Fell, C. R., Chi, M. & Meng, Y. S., "Identifying surface structural changes in layered Li-excess nickel manganese oxides in high voltage lithium ion batteries: A joint experimental and theoretical study," Energy Environ. Sci. 4, 2223-2233 (2011); Fell, C. R. et al., "Correlation between oxygen vacancy, microstrain, and cation distribution in lithium-excess layered oxides during the first electrochemical cycle," Chem. Mater. 25, 1621-1629 (2013); Qian, D., Xu, B., Chi, M. & Meng, Y. S., "Uncovering the roles of oxygen vacancies in cation migration in lithium excess layered oxides," Phys. Chem. Chem. Phys. 16, 14665-14668 (2014). Previous publications have described creation of oxygen vacancies with a reducing atmosphere. Kubota, K. et al., "Direct synthesis of oxygen-deficient Li2MnO3-x for high capacity lithium battery electrodes," Journal of Power Sources 216, 249-255 (2012). Other publications report use of leaching with acid accompanied by heat treatment. Kang, S. H., Johnson, C. S., Vaughey, J. T., Amine, K. & Thackeray, M. M., "The effects of acid treatment on the electrochemical properties of 0.5Li2MnO3-0.5LiNi0.44Co0.25Mn0.31O2 electrodes in lithium cells,". J. Electrochem. Soc. 153, A1186-A1192 (2006). Bulk structures reported in our previous works and from other techniques to produce oxygen vacancies easily transforms from a pure layered phase to spinel- and/or rock-salt phases that immensely damages the rate capability and cycling stability.

Lithium-excess cathode material and co-precipitation formation method

The Regents of the University of California


The invention provides an elevator having a car movable along guide rails mounted in a shaft. The elevator comprises an inspection control station mounted on top of the car and accessible via a movable control station cover, blocking means for selectively preventing movement of the car into a safety space within the shaft and actuation means for actuating the blocking means. The actuation means is configured for concurrent movement with the control station cover. Accordingly, a temporary safety space is automatically created within the shaft as the maintenance technician opens the control station cover to move the car using the inspection control station.

On the one hand there is continual pressure on elevator designers to reduce the space required for an installation within a building, but on the other hand the installation must meet industry standards by ensuring that an adequate safety space is provided in the overhead and pit of the shaft for maintenance personnel working in the shaft. Traditionally, these safety requirements have been met by providing an extended shaft having the appropriate safety spaces permanently installed above and below the travel path of the elevator car.
There have been recent proposals to reduce the space required by an elevator installation by removing the permanent safety spaces and instead creating temporary safety spaces only when required. U.S. Pat. No. 5,773,771 describes such a system using bolts that extend outwardly from opposing sides of the elevator car to prevent the car from moving into a particular zone or temporary safety space. When maintenance is to be carried out within the shaft, the technician mounts the roof of the car and pulls a rod at the side of the car to trigger the bolts into their extended position. The technician can then move the car at a reduced, inspection speed along the shaft using an inspection control station. The travel path of the car is restricted as the extended bolts engage with corresponding steel plates mounted at specific positions on the guide rails and the required temporary safety space is thereby established.
The objective of the present invention is to simplify the procedure for performing maintenance operations within the shaft of an elevator installation. In particular, the invention seeks to overcome the need of the maintenance technician to remember to manually activate the bolts before commencing inspection speed travel using an inspection control station mounted on the car.

Creation of temporary safety spaces for elevators


The present invention relates to a modular prosthetic conduit implantable within a mammal and a method of surgically implanting and replacing such a conduit. Specifically, the present invention is directed toward a conduit comprising a first conduit member composed of a biocompatible alloplast and coated on its exterior surface with a porous biocompatible tissue-bonding material. The present invention is further directed toward a second conduit member composed of a biocompatible alloplast. The second conduit member contains a region or component that can be expanded radially by mechanical, hydraulic, chemical, electrical, temperature sensitive or other physical means. The second component can be easily slid into or out of the first conduit member and at temperatures approaching a mammal's body temperature, it expands to form a watertight "docking" fit within the first conduit member. The second conduit member may contain remotely actuable valve and pump.. Both the first conduit member and the second conduit member may be altered with respect to size, geometry and shape so as to affect conduits, reservoirs, sampling chambers and tissue-prosthesis interfaces. By way of altered size, geometry and shape, the modular prosthetic conduit may serve to drain bodily fluids, give access to intracorporeal organs, deliver drugs or chemicals or energies into the body. Both conduits may be impregnated with antimicrobials to lessen the risk of bacterial colonization.

1. Field of the Invention
The present invention relates to a modular prosthetic conduit implantable within a mammal and a method of surgically implanting and replacing such a conduit. Specifically, the present invention is directed toward a conduit comprising a first conduit member composed of a nonporous biocompatible alloplast--such as silicone rubber and coated on its exterior surface with a porous biocompatible tissue-bonding material. The present invention is further directed toward a second conduit member composed of a nonporous biocompatible alloplast, such as silicone rubber. The second conduit member contains a region or component that can be expanded radially by mechanical, hydraulic, chemical, electrical, temperaturesensitive or other physical means. This component of the second conduit member may be temperature-sensitive region or component such that at low temperatures, it can be easily slid into or out of the first conduit member, and at temperatures approaching a mammal's body temperature, the temperature sensitive region expands to form a watertight "docking" fit within the first conduit member. The second conduit member may also contain remotely actuable valve and pump.
2. Description of the Prior Art
Implantable prosthetic conduits are frequently used in the field of medicine to provide pathways for transporting fluids or energy. Such conduits may also have other applications, such as the inclusion of reservoirs in the medical sciences. A common problem encountered with medical implants is infection. Proper bonding between the implant and the tissue in which it is implanted is an important factor in avoiding infection.
It is known that biocompatible alloplastic devices coated with porous biocompatible tissue-bonding material, such as porous polytetrafluoroethylene (PTFE), or porous polyurethane, or porous Dacron.RTM. (polyethylene terephthalate fiber) or other porous biocompatible alloplasts, effectively bond with epithelial-lined muscular visceral tissues in watertight anastomotic union. Long-term durability of such anastomoses has been achieved in both humans and in animals. Extraluminal porous biocompatible tissue-bonding material, such as polytetrafluoroethylene or porous Dacron.RTM. or porous polyurethane or other porous biocompatible alloplasts, in such unions does not usually become colonized with intraluminal bacteria.
Bacterial colonization of porous biocompatible tissue-bonding material is common with porous devices that pass transcutaneously or into body viscera, such as the urinary collecting system. Such colonization leads to the erosion of the anastomoses and loss of any implanted conduit or related prosthetic device.
Nonporous biocompatible alloplast tubes that pass through viscera, such as the epithelial-lined muscular organs, including but not limited to the ureter, bladder, and urethra, and which are anchored extraluminally by porous biocompatible tissue-bonding material, do not usually transmit intraluminal bacteria to the extraluminal porous biocompatible tissue-bonding material. Nonporous biocompatible alloplast tubes, such as silicone tubes, in chronic contact with urine are subject to coating with urinary mucus, encrustation, and stone formation from the dissolved salts contained in the urine. Periodic low morbidity, low-cost replacement of such tubes is desirable.
The present invention is directed toward making implantable medical devices that make effective use of the tissue-bonding properties of porous biocompatible tissue-bonding material, such as polytetrafluoroethylene, polyurethane or polyester fiber, and that also contain a renewable or replaceable nonporous biocompatible alloplast component which can be periodically replaced. A suitable polyester fiber is sold under the trademark Dacron.RTM..
The present invention is directed toward a modular implantable conduit that will allow replacement of the component most likely to become problematic. This invention will decrease the time, expense, and complexity of surgery required to replace such implants.
The present invention also encompasses a surgical method of implanting the conduit. The present invention envisions that the conduit may be used to transport energy (such as electrical, magnetic, or pneumatic), or fluid (such as urine, blood, glandular fluid, or spinal fluid), into or out of the body. The conduit may also be used to transport energy or fluid within or between viscera and other organs. The conduit may contain one or multiple additional components such as reservoirs or sampling chambers. It is also envisioned that the conduit may be used for sampling, evacuating, or adding to body fluids and/or tissues. The present invention may also be a component in a modular system wherein the conduit is attached to a tissue bonding cystostomy tube.


A control device for a vehicle is equipped with a vehicle model motion determining device for determining a motion of a vehicle (a vehicle model motion) on a vehicle model expressing the dynamic characteristics of a vehicle on the basis of drive manipulated variables, such as an angle of steering by a driver, and a state amount error reaction control device for determining control inputs to an actuator control device of the actual vehicle and the vehicle model motion determining device according to a feedback law on the basis of a difference between a state amount of a vehicle model motion (model state amounts, such as a position or a posture of a vehicle) and a state amount of a motion of the actual vehicle 1 (a state amount error). Based on a state amount error, not only a motion of an actual vehicle but also a vehicle model motion is manipulated, thereby enhancing robustness against disturbance factors or their changes while conducting actuator operation control that is suited to a behavior of the actual vehicle as much as possible.

A vehicle, such as an automobile, is provided with systems, including a driving/braking system that transmits a driving force from a propulsive force generating source, such as an engine, to a wheel or imparts a braking force, a steering system (steering control system) for controlling steering control wheels of a vehicle, and a suspension system that elastically supports a vehicle body on wheels, as main mechanisms. Furthermore, in recent years, there has been known a vehicle provided with a variety of electric or hydraulic actuators to actively (positively) control the operations of the actuators according to a traveling condition or an environmental condition or the like rather than only passively operating the aforesaid systems in response to operations (man-caused operations) of a steering wheel (driver's wheel), an accelerator (gas) pedal, a brake pedal or the like performed by a driver (refer to, for example, 6.8.1 of page 220 of "Automotive Engineering Handbook—Basics and Theory (Vol. 1)/The Society of Automotive Engineers of Japan (published on Jun. 15, 1992)" (hereinafter referred to as non-patent document 1)).
Regarding, for example, a steering system, a control method called a model following method is shown in FIGS. 6-99(a) on page 225 of the aforesaid non-patent document 1. According to this control method, a steering control angle of a steering wheel operated by a driver is input to a reference model in which the steering control response characteristics of yaw angular velocities and lateral accelerations have been set in advance. Then, an input of a vehicle model is determined so as to make the vehicle model follow an output of the reference model, and the determined input is additionally input to an actual vehicle (an actual steering system), thereby operating the actual vehicle steering.
However, the technology shown in the aforesaid non-patent document 1 has been suffering from the following inconveniences. The behaviors of an actual vehicle are subjected to a variety of disturbance factors, including changes in a friction coefficient of a road surface. Meanwhile, it is virtually difficult to construct a vehicle model expressing behaviors of the vehicle by taking every disturbance factor into account, and there is no other choice but to construct it by assuming a certain standard environmental condition. Furthermore, even if a vehicle model is constructed by taking a variety of disturbance factors into account, various parameters defining a behavior of the vehicle model will develop errors (modeling errors). Therefore, according to the technology shown in FIGS. 6-99(a) on page 225 in non-patent document 1, a variety of disturbance factors acting on an actual vehicle or changes therein cause a significant difference (mismatch) between a behavior of the actual vehicle and a behavior of a vehicle model to take place in some cases. In such a case, a control input (manipulated variable) that does not match a behavior of the actual vehicle will control an operation of an actuator of the vehicle or the operation of the actuator will be restricted by a limiter, making it difficult to ideally control the operation of the actuator.
In a conventional vehicle wherein a driving/braking system, a steering system or a suspension system is actively controlled through the intermediary of actuators, generally, state amounts (a vehicle speed, an engine speed, and the like) of the vehicle and a vehicle traveling environment (a friction coefficient of a road surface and the like) are detected through sensors or estimated by observers or the like, and on the basis of the detection values and estimated values, the manipulated variables of the actuators (control inputs to the actuators) are determined using a map or the like that has been set beforehand on the basis of traveling experiments or the like. With such a technology, however, it frequently happens that a detection error or an estimation error in a state amount or a traveling environment of a vehicle causes a control input (manipulated variable) that does not suit a behavior of the actual vehicle to control an operation of an actuator or to restrict an operation of the actuator by a limiter. This makes it difficult to ideally control the operations of the actuators.
The present invention has been made in view of the background described above, and it is an object thereof to provide a control device for a vehicle that is capable of enhancing robustness against disturbance factors or changes therein while carrying out control of the operations of actuators that suit behaviors of an actual vehicle as much as possible.


A computer system is characterized by comprising a microprocessor for performing various arithmetic processing operations, an input/output device connected to said microprocessor to send/receive data to/from an external device; and a semiconductor memory device connected to said microprocessor to store data, wherein said semiconductor memory device includes a plurality of memory cells each having a transistor having a source terminal and a drain terminal and a ferroelectric capacitor having a first terminal connected to said source terminal and a second terminal connected to said drain terminal, a predetermined number of memory cells are connected in series, and a select transistor is connected to at least one terminal of said series connected portion to constitute a memory cell block, and a plurality of memory cell blocks are arranged to constitute a cell array.

The present invention relates to a nonvolatile semiconductor memory device using a ferroelectric capacitor, a method of driving the same, and various systems each having the semiconductor memory device.
In recent years, a nonvolatile memory (FRAM) using a ferroelectric capacitor has received a great deal of attention as one of semiconductor memories. Since the FRAM is advantageous in that it is nonvolatile, the number of times of rewrite access is 10.sup.12, the read/write time almost equals that of a DRAM, and it can operate at a low voltage of 3 to 5V, the FRAMs may replace all memory markets.
Along with developments, the cell size of the FRAM has been reduced by simplifying and micropatterning the cell structure, as in development of DRAMs. FIG. 1A shows the memory cell of a conventional DRAM having a 1-transistor/1-capacitor structure. FIG. 1B shows the memory cell of a conventional FRAM having a 1-transistor/1-capacitor structure. Reference symbol WL denotes a word line; BL, a bit line; SN, a storage node; and PL, a plate electrode.
The FRAM memory cell basically has the same structure as that of the DRAM. The FRAM is different from the DRAM in the following two points. (1) Although the DRAM uses a dielectric without any spontaneous dielectric polarization as a capacitor, the FRAM uses a ferroelectric capacitor. (2) In the DRAM, the plate electrode at one terminal of the capacitor is fixed at (1/2)Vcc. However, in the FRAM, the plate electrode potential is changed within the range of 0V to Vcc.
For (2), however, the scheme of changing the plate electrode potential is being replaced with a scheme of fixing the plate electrode at (1/2)Vcc.
Therefore, the FRAM equals the DRAM except for (1). The FRAM also has the same cell array structure as that of the DRAM. The FRAM has a folded bit line (BL) structure as shown in FIG. 1C. The minimum cell size at this time is represented as follows: EQU 2F.times.4F=8F.sup.2
In FIG. 1C, reference symbol MC denotes a memory cell; SA, a sense amplifier; and F, a minimum processing size. BL and BL in FIG. 1C denote a bit line pair.
The principle of the operation of the FRAM will be briefly described with reference to FIGS. 2A and 2B.
In the DRAM, the cell transistor is turned on, and Vcc or a voltage of 0V is applied to the cell capacitor to write charges, thereby storing store data "0" or "1". In reading, the cell transistor is turned on to read out the charges. In the DRAM, the accumulated charges (polarization value C!) are proportional to the voltage applied across the cell capacitor, as shown in FIG. 2A. For this reason, when the applied voltage becomes 0V due to a leakage current at the p-n junction of the cell transistor or the like, the polarization value also becomes 0 C, and the information is destroyed.
In the FRAM, however, the polarization characteristics have a hysteresis. A case wherein, after power-ON, the plate (PL) voltage is 0V, the storage node (SN) potential is 0V, and data "0" has been written in the cell will be considered. Since the plate electrode potential is 0V, and the storage node potential is 0V, the voltage applied to the ferroelectric capacitor is 0V, and the polarization value is at a position D of the remnant polarization (=-Pr) in FIG. 2B. When the memory cell data is to be read out, the bit line (BL) potential is precharged to 0V, the cell transistor is turned on, and the plate electrode voltage is raised to Vcc. Since the bit line capacity is larger than the storage node capacity, a voltage -Vcc is applied between the bit line and the plate electrode. The polarization value changes from the point D to a point C, so that a potential corresponding to the small saturation polarization difference Ps-Pr is read out to the bit line.
When data "1" has been written in the cell, the voltage -Vcc is applied between the bit line and the plate electrode, as in the above-described case. Accordingly, polarization inversion from a point B to the point C occurs, and charges in a large amount corresponding to Ps+Pr are read out to the bit line.
The reference bit line potential is raised to the potential at which charges corresponding to Ps are read out. In reading the data "1", a potential difference corresponding to (Ps+Pr)-(Ps)=Pr is generated between the reference bit line and the bit line. In reading the data "0", a potential difference corresponding to (Ps-Pr)-(Ps)=-Pr is generated between the reference bit line and the bit line. This result (potential difference) is amplified by the sense amplifier. The readout result is amplified by the sense amplifier. For the data "1", the bit line is set at Vcc. For the data "0", the bit line is set at 0V.
To rewrite the memory cell data, the plate electrode voltage is lowered to 0V again. At this time, the data "0" returns from the point C to the point D at BL-PL=0V, and the data "1" returns from the point C to the point D and then polarization-inverted to a point A at BL-PL=Vcc. Thereafter, the cell transistor is turned off. The data "1" moves from the point A to the point B when the storage node potential lowers to 0V due to the leakage current and stops at the point B. FIG. 3A shows the series of operations.
The largest difference between the operation of the FRAM and that of the DRAM is as follows. In the FRAM, no data is read out only by turning on the cell transistor and short-circuiting the bit line BL and the storage node SN. No charges are removed unless the direction of polarization is reversed to that for writing the charges between the bit line BL (storage node SN) and the plate electrode PL. Accordingly, a plate electrode operation with a large load capacity is required, and read/write access takes a long time. This is the disadvantage of the FRAM.
To solve this problem, the scheme of fixing the plate electrode potential at (1/2)Vcc is proposed, as described above. FIGS. 3B and 3C show the operations of these schema. In recall after power-ON (on the left side of FIGS. 3B and 3C), the plate electrode PL is precharged to (1/2)Vcc, and the bit line BL is precharged to 0V. The word line WL is selected to turn on the cell transistor. At this time, a voltage of -(1/2)Vcc is applied between the bit line BL and the plate electrode PL. As shown in FIG. 2B, the data "1" is polarization-inverted from the point B to the point C, the data "0" moves from the point D to the point C without polarization inversion, and the accumulated charges are read out to the bit line BL. The information "0" or "1" is read out depending on the presence/absence of polarization inversion. The readout result is amplified by the sense amplifier. For the data "1", the bit line BL is set at Vcc. For the data "0", the bit line BL is set at Vss. A voltage of (1/2)Vcc=BL-PL or a voltage of (-1/2)Vcc=BL-PL is applied to the cells. The data "1" moves from the point C to the point A, the data "0" stays at the point C, and the data is written.
The scheme shown in FIG. 3B slightly differs from that shown in FIG. 3C in the subsequent operation. In FIG. 3B, after the bit line BL is equalized to (1/2)Vcc (more specifically, the data "1" moves from the point A to the point B, and the data "0" moves from the point C to the point D), the word line WL is closed to return the bit line potential to 0V. Even when the bit line BL is equalized, the data stays at the point B or D, so the data is not destroyed. This operation reversely exploits the characteristics of the ferroelectric capacitor. In FIG. 3C, after the word line WL is closed, the bit line BL is equalized to (1/2)Vcc (more specifically, the data "1" stays at the point A, and the data "0" stays at the point C). For reading after recall, the charge difference (Ps-Pr) between the point A and the point B or between the point C and the point D is used, as in the DRAM (the degradation in the amount of the remnant polarization Pr due to the fatigue caused by polarization inversion in reading is suppressed).
The scheme shown in FIG. 3B or 3C is more advantageous than that shown in FIG. 3A in that the operation speed in access time or cycle time does not degrade unlike the scheme of changing the plate electrode potential, so that a high-speed operation is enabled. On the other hand, the scheme shown in FIG. 3B or 3C is more disadvantageous than that shown in FIG. 3A in that the voltage (coercive voltage Vc) necessary for polarization inversion must be (1/2)Vcc or less (this problem is solved by reducing the size of the ferroelectric film). Additionally, the FRAM has a large disadvantage in that a refresh operation is required, like the DRAM (the refresh operation increases the stand-by current or generates a busy rate).
In the scheme shown in FIG. 3B, the storage node SN of the cell is at (1/2)Vcc in the stand-by state. When the storage node potential becomes lower than (1/2)Vcc due to the leakage current at the p-n junction or the like, the data "1" moves from the point B to the point C, and the data is destroyed. Accordingly, the refresh operation must be performed to select the word line WL and write the potential of (1/2)Vcc in the storage node SN every a predetermined period in the stand-by state, as shown on the right side of FIG. 3B.
In the scheme shown in FIG. 3C, the storage node SN is set at Vcc or 0V in the stand-by state. When the storage node potential becomes lower than Vcc due to the leakage current at the p-n junction or the like, the data "1" moves from the point A to the point B, and then to the point C, and the data is destroyed. In this case, since the normal operation is the same as that of the DRAM, the data is destroyed upon moving to the point B. Accordingly, the refresh operation must be performed to select the word line WL and read/sense/rewrite the data every predetermined period in the stand-by state, like the DRAM, as shown on the right side of FIG. 3C.
For the conventional DRAMs, various cells are developed to realize a cell size smaller than 8F.sup.2. A stacked-type transistor or stacked-type TFT (Thin Film Transistor) is used to realize a size of 4F.sup.2, or cell transistors are connected in series, and capacitors are connected between the cell transistors and the plate electrode PL, thereby realizing a size of about 4F.sup.2 (NAND cell).
Since the equivalent circuit of the FRAM is basically the same as that of the DRAM, an FRAM having a size of 4F.sup.2 can be realized with the same cell structure as that of the DRAM. The FRAM also has the same problems as those of the DRAM. The stacked-type transistor or stacked-type TFT can hardly be realized because the manufacturing process is more complex than that for a conventional planar transistor having a size of 8F.sup.2, which can be easily manufactured. In the FRAM, these cells are basically realized as trench cells in which a transistor is formed after the ferroelectric capacitor process. Therefore, the permittivity of the ferroelectric capacitor decreases due to the heat process in the transistor manufacturing process.
The NAND cell can be manufactured using a planar transistor and can have a stack cell structure in which the capacitor is formed after the transistor process. In the NAND cell, however, cell data must be sequentially read out from cells closer to the bit line BL or must be sequentially written in cells farther from the bit line BL. This degrades the random access properties as an important point of a general-purpose memory and allows only block read/write access.
As described above, in the conventional FRAM, when a memory cell having a size of 4F.sup.2 smaller than 8F.sup.2 is to be realized, the process becomes complex for, e.g., the stacked-type transistor, or the random access properties of a general-purpose memory degrade for, e.g., a NAND cell. Additionally, the conventional FRAM cannot simultaneously realize the high-speed operation of the scheme of fixing the plate electrode potential and omission of the refresh operation.
Various systems having semiconductor memories have examined replacement of the conventional DRAM with the FRAM. However, such examinations have not reached a practical level yet because of the above-described problems unique to the FRAM.

Semiconductor memory device and various systems mounting them


The adhesion of a diffusion barrier or capping layer to a Cu or Cu alloy interconnect member is significantly enhanced by treating the exposed surface of the Cu or Cu alloy interconnect member: (a) under plasma conditions with ammonia and silane or dichlorosilane to form a copper silicide layer thereon; or (b) with an ammonia plasma followed by reaction with silane or dichlorosilane to form a copper silicide layer thereon. The diffusion barrier layer is then deposited on the copper suicide layer. Embodiments include electroplating or electroless plating Cu or a Cu alloy to fill a damascene opening in a dielectric interlayer, chemical mechanical polishing, then treating the exposed surface of the Cu/Cu alloy interconnect to form the copper silicide layer thereon, and depositing a silicon nitride diffusion barrier layer on the copper silicide layer.

The present invention relates to copper (Cu) and/or Cu alloy metallization in semiconductor devices. The present invention is applicable to manufacturing high speed integrated circuits having submicron design features and high conductivity interconnect structures.
The escalating requirements for high density and performance associated with ultra large scale integration semiconductor wiring require responsive changes in interconnection technology, which is considered one of the most demanding aspects of ultra large scale integration technology. Such escalating requirements have been found difficult to satisfy in terms of providing a low RC (resistance capacitance) interconnect pattern, particularly wherein submicron vias, contacts and trenches have high aspect ratios imposed by miniaturization.
Conventional semiconductor devices comprise a semiconductor substrate, typically doped monocrystalline silicon, and a plurality of sequentially formed dielectric interlayers and conductive patterns. An integrated circuit is formed containing a plurality of conductive patterns comprising conductive lines separated by interwiring spacings, and a plurality of interconnect lines, such as bus lines, bit lines, word lines and logic interconnect lines. Typically, the conductive patterns on different layers, i.e., upper and lower layers, are electrically connected by a conductive plug filling a via hole, while a conductive plug filling a contact hole establishes electrical contact with an active region on a semiconductor substrate, such as a source/drain region. Conductive lines formed in trench openings typically extend substantially horizontal with respect to the semiconductor substrate. Semiconductor xe2x80x9cchipsxe2x80x9d comprising five or more levels of metallization are becoming more prevalent as device geometries shrink to submicron levels.
A conductive plug filling a via hole is typically formed by depositing a dielectric interlayer on a conductive layer comprising at least one conductive pattern, forming an opening through the dielectric interlayer by conventional photolithographic and etching techniques, and filling the opening with a conductive material, such as tungsten (W). Excess conductive material on the surface of the dielectric interlayer is typically removed by chemical mechanical polishing (CMP). One such method is known as damascene and basically involves forming an opening in the dielectric interlayer and filling the opening with a metal. Dual damascene techniques involve forming an opening comprising a lower contact or via hole section in communication with an upper trench section, which opening is filled with a conductive material, typically a metal, to simultaneously form a conductive plug in electrical contact with a conductive line.
High performance microprocessor applications require rapid speed of semiconductor circuitry. The control speed of semiconductor circuitry varies inversely with the resistance and capacitance of the interconnection pattern. As integrated circuits become more complex and feature sizes and spacings become smaller, the integrated circuit speed becomes less dependent upon the transistor itself and more dependent upon the interconnection pattern. Thus, the interconnection pattern limits the speed of the integrated circuit.
If the interconnection node is routed over a considerable distance, e .g., hundreds of microns or more as in submicron technologies, the interconnection capacitance limits the circuit node capacitance loading and, hence, the circuit speed. As integration density increases and feature size decreases in accordance with submicron design rules, the rejection rate due to integrated circuit speed delays approaches and even exceeds 20%.
One way to increase the control speed of semiconductor circuitry is to reduce the resistance of a conductive pattern. Conventional metallization patterns are typically formed by depositing a layer of conductive material, notably aluminum (Al) or an alloy thereof, and etching, or by damascene techniques. Excess conductive material on the surface of the dielectric layer is then removed as by CMP. Al is conventionally employed because it is relatively inexpensive, exhibits low resistivity and is relatively easy to etch. However, as the size of openings for vias/contacts and trenches is scaled down to the sub-micron range, step coverage problems have arisen involving the use of Al which has decreased the reliability of interconnections formed between different wiring layers. Such poor step coverage results in high current density and enhanced electromigration. Moreover, low dielectric constant polyamide materials, when employed as dielectric interlayers, create moisture/bias reliability problems when in contact with Al.
One approach to improved interconnection paths in vias comprises the use of completely filled plugs of a metal, such as W. Accordingly, many current semiconductor devices utilizing VLSI (very large scale integration) technology employ Al for a wiring metal and W plugs for interconnections at different levels. However, the use W is attendant with several disadvantages. For example, most W processes are complex and expensive. Moreover, W has a high resistivity. The Joule heating may enhance electromigration of adjacent Al wiring. Furthermore, W plugs are susceptible to void formation and the interface with the wiring layer usually results in high contact resistance.
Another attempted solution for the Al plug interconnect problem comprises the use of chemical vapor deposition (CVD) or physical vapor deposition (PVD) at elevated temperatures for Al deposition. The use of CVD for depositing Al has proven expensive, while hot PVD Al deposition requires very high process temperatures incompatible with manufacturing integrated circuitry.
Cu and Cu alloys have received considerable attention as a candidate for replacing Al in VLSI interconnect metallizations. Cu exhibits superior electromigration properties and has a lower resistivity than Al. In addition, Cu has improved electrical properties vis-a-vis W, making Cu a desirable metal for use as a conductive plug as well as conductive wiring.
Electroless plating and electroplating of Cu and Cu alloys offer the prospect of low cost, high throughput, high quality plated films and efficient via, contact and trench filling capabilities. Electroless plating generally involves the controlled autocatalytic deposition of a continuous film on the catalytic surface by the interaction in solution of a metal salt and a chemical reducing agent. Electroplating comprises the electrodeposition of an adherent metallic coating on an electrode employing externally supplied electrons to reduce metal ions in the plating solution. A seed layer is required to catalyze electroless deposition or to carry electrical current for electroplating. For electroplating, the seed layer must be continuous. For electroless plating, very thin catalytic layers, e.g., less than 100 xc3x85, can be employed in the form of islets of catalytic metal.
There are disadvantages attendant upon the use of Cu or Cu alloys. For example, Cu readily diffuses through silicon dioxide, the typical dielectric interlayer material employed in the manufacture of semiconductor devices, into silicon elements and adversely affects device performance.
One approach to forming Cu plugs and wiring comprises the use of damascene structures employing CMP, as in Chow et al., U.S. Pat. No. 4,789,648. However, due to Cu diffusion through dielectric interlayer materials, such as silicon dioxide, Cu interconnect structures must be encapsulated by a diffusion barrier layer. Typical diffusion barrier metals include tantalum (Ta), tantalum nitride (TaN), titanium nitride (TiN), titanium-tungsten (TiW), tungsten (W), tungsten nitride (WN), Tixe2x80x94TiN, titanium silicon nitride (TiSiN), tungsten silicon nitride (WSiN), tantalum silicon nitride (TaSiN) and silicon nitride for encapsulating Cu. The use of such barrier materials to encapsulate Cu is not limited to the interface between Cu and the dielectric interlayer, but includes interfaces with other metals as well.
There are, however, significant problems attendant upon conventional Cu interconnect methodology employing a diffusion barrier layer. For example, conventional practices comprise forming a damascene opening in a dielectric interlayer, depositing a barrier layer such as TaN, filling the opening with Cu or a Cu alloy layer, CMP, and forming a capping layer on the exposed surface of the Cu or Cu alloy. It was found, however, that capping layers, such as silicon nitride, exhibit poor adhesion to the Cu or Cu alloy surface. Consequently, the capping layer is vulnerable to removal, as by peeling due to scratching or stresses resulting from subsequent deposition of layers. As a result, the Cu or Cu alloy is not entirely encapsulated and Cu diffusion occurs thereby adversely affecting device performance and decreasing the electromigration resistance of the Cu or Cu alloy interconnect member.
In U.S. Pat. No. 5,447,887, the adhesion problem of a silicon nitride capping layer to a copper interconnect is addressed by initially treating the exposed surface with silane in the absence of a plasma to form a thin layer of copper silicide, and depositing a silicon nitride capping layer thereon. The use of silane to passivate Cu by silicide formation is also disclosed by Hymes et al., xe2x80x9cPassivation of copper by silicide formation in dilute silanexe2x80x9d, J. Appl. Phys. 71 (9) May 1, 1992, pp. 4623-4625.
As design rules extend deeper into the submicron range, e.g., about 0.18 microns and under, the reliability of the interconnect pattern becomes particularly critical. Accordingly, the adhesion of capping layers to Cu interconnects requires even greater reliability.
There exists a need for methodology enabling the formation of encapsulated Cu and Cu alloy interconnect members having high reliability. There exists a particular need for improving the adhesion of capping layers to Cu and Cu alloy interconnect members.
An advantage of the present invention is a method of manufacturing a semiconductor device having highly reliable Cu or Cu alloy interconnect members.
Another advantage of the present invention is a method of manufacturing a semiconductor device comprising a Cu or Cu alloy interconnect member having a silicon nitride capping layer tightly adhered thereto.
Additional advantages and other features of the present invention will be set forth in the description which follows, and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from the practice of the present invention. The advantages of the present invention may be realized and obtained as particularly pointed out in the appended claims.
According to the present invention, the foregoing and other advantages are achieved in part by a method of manufacturing a semiconductor device, the method comprising: forming a copper (Cu) or Cu alloy layer; and forming a layer of copper silicide on a surface of the Cu or Cu alloy layer by: (a) treating the surface of the Cu or Cu alloy layer with an ammonia plasma followed by reacting the treating surface with silane or dichlorosilane to form the copper suicide layer; or (b) treating the surface of the Cu or Cu alloy layer under plasma conditions with ammonia and silane or dichlorosilane to form the copper silicide layer.
Another aspect of the present invention is a method of manufacturing a semiconductor device, the method comprising: forming an opening in a dielectric layer; depositing Cu or a Cu alloy layer in the opening and over the dielectric layer; removing any portion of the Cu or Cu alloy layer beyond the opening by chemical mechanical polishing, leaving an exposed surface oxidized; forming a layer of copper silicide on the exposed surface of the Cu or Cu alloy layer by: (a) treating the exposed surface of the Cu or Cu alloy layer with an ammonia plasma followed by reacting the treated surface with silane or dichlorosilane to form the copper silicide layer; or (b) treating the exposed surface of the Cu or Cu alloy layer under plasma conditions with ammonia and silane or dichlorosilane to form the copper silicide layer; and depositing a silicon nitride diffusion barrier layer on the copper silicide layer.
Additional advantages of the present invention will become readily apparent to those skilled in this art from the following detailed description, wherein embodiments of the present invention are described, simply by way of illustration of the best mode contemplated for carrying out the present invention. As will be realized, the present invention is capable of other and different embodiments, and its several details are capable of modifications in various obvious respects, all without departing from the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.

Method of forming reliable capped copper interconnects


Methods and devices are provided for an agricultural pesticide-free air sterilization machine. In one embodiment, the machine employs a liquid-gas mixing device, an ozone generator, a water inlet; and/or a water outlet. The mixing device may have a water inlet, a water outlet, a feed pump, a jet device, and/or a liquid-gas mixer. Further, the ozone generator utilizes an oxygen generator, an oxygen storage container, and a high voltage discharge chamber. In other embodiments, the feed pump is connected to the water inlet of the jet device via a hose, and the ozone generator is connected to the gas inlet of the jet device via a gas tube.

Current agricultural methods require protection of crops in order to facilitate normal growth without haze bacteria, powdery mildew, anthrax bacteria mole crickets, brown spot fungus, downy mildew, canker bacteria, viruses and other types of fungi infection. At present, there exists both traditional agricultural pesticide methods and pesticide-free methods. The pesticide-free methods include the use of ultraviolet disinfection, ozone disinfection, and other similar methods. It is well known that pesticides provide effective sterilization, but the chemical composition of such treatments is likely to result in residues that cause crop pollution and other side effects. Such side effects are prone to entering the food chain and affecting the health of consumers. Therefore non-pesticide sterilization is now the mainstream trend.
Ozone sterilization is also a popular method used in the agriculture and aquaculture industries. Ozone sterilization is safe, non-toxic, and results in no residue contamination. It is generally recognized as an effective sterilization method, and is less burdensome and costly to apply when compared to ultraviolet disinfection. One disadvantage of ozone sterilization is limited application range. It is difficult to apply ozone sterilization to a wide area of arable land. In order to achieve a comprehensive and effective sterilization and disinfection, doing so would result in a more complex technical application method, and a higher cost of materials and labor.
In addition to the need for sterilization of farming, there is also the requirement for pest control. Both sterilization and pest control are needed in order to protect the healthy growth of crops. Therefore, pest control and sterilization must be carried out side by side to fully promote agricultural planting harvest, and to guarantee return. Therefore, there is an unfulfilled need in the art to produce a crop sterilization method that enables a broad spectrum application to a relatively large crop area.

Pesticide-free agricultural air sterilization and farming equipment


Described in this invention is a catalytic process for making amide acetals from nitrites and diethanolamines. Amide acetals can be further crosslinked by hydrolyzing the amide acetal groups, and subsequently reacting the hydroxyl groups and/or the amine functions that are formed, to crosslink the composition.

The synthesis of bicyclic amide acetals by the reaction of a dialkanol amine, such as diethanol amine with alkyl nitriles has been reported to result in relatively low yields (30–40%) in Angew Chem. 85, (1973). U.S. Pat. No. 4,652,655 describes an improved process for preparation of bicyclic acetal amides by the reaction of an organic nitrile with a dialkanol amine wherein the reaction temperature is maintained below about 140° C. European Patent application EP 0171811 A2 describes a process for preparing bicyclic amide acetal by reacting diethanolamine and a nitrile having a formula R—C—N where R is an alkyl, aralkyl, or alicyclic group in presence of an alkali metal or an alkaline earth metal catalyst in a temperature range of 80° C. to 120° C. However, the reaction time with such catalysts is long and the conversion rate is poor.
Amide acetals have been used for example in copolymerization with polyisocyanates as disclosed in U.S. Pat. No. 4,721,767. Crosslinked amide acetal based coating compositions dry and cure rapidly without the potential problems created by VOC emissions. Such coatings can be very useful, for example, in the automotive coatings industry.
The crosslinking (curing) of polymers is an important commercial activity, useful, for example, in elastomers, in coatings, and in thermoset materials such as are used for electronics. Controlling when and under what conditions crosslinking takes place is usually critical since once a polymer is crosslinked it is usually not "workable," that is it may not be reshaped. In some applications, such as coatings and electronic applications it may be desirable or even mandatory that no lower molecular weight compounds be volatilized during or after the crosslinking of the polymers, so as not to contaminate sensitive equipment such as electronics, and/or to pollute the environment, as in the case of coatings.
Numerous ways have been found to avoid the production of volatile compounds during curing. For example, the reaction of epoxy groups with other groups such as hydroxyl groups may accomplish this result, but it is sometimes difficult to control after the ingredients are mixed. Furthermore, higher temperatures may be required for this operation. To avoid these types of problems, especially in coatings which often must be cured under conditions close to ambient conditions and which often must be stable for long periods before curing, other solutions have been found, such as the use of spiroorthoesters, see for example World Patent Application 9731073. However new and/or improved methods of crosslinking polymers are needed.
For coatings, basecoat-clearcoat systems have found wide acceptance in the past decade as automotive finishes. Continuing effort has been directed to such coating systems to improve the overall appearance, the clarity of the topcoat, and the resistance to deterioration. Further effort has been directed to the development of coating compositions having low volatile organic content (VOC). A continuing need exists for coating formulations, which provide outstanding performance characteristics after application.
In repairing damage, such as dents to auto bodies, the original coating in and around the damaged area is typically sanded or ground out by mechanical means. Some times the original coating is stripped off from a portion or off the entire auto body to expose the bare metal underneath. After repairing the damage, the repaired surface is coated, preferably with low VOC coating compositions, typically in portable or permanent low cost painting enclosures, vented to atmosphere to remove the organic solvents from the freshly applied paint coatings in an environmentally safe manner. Typically, the drying and curing of the freshly applied paint takes place within these enclosures. Furthermore, the foregoing drying and curing steps take place within the enclosure to also prevent the wet paint from collecting dirt or other contaminants in the air.
As these paint enclosures take up significant floor space of typical small auto body paint repair shops, these shops prefer to dry and cure these paints as fast as possible. More expensive enclosures are frequently provided with heat sources, such as conventional heat lamps located inside the enclosure to cure the freshly applied paint at accelerated rates. Therefore, to provide more cost effective utilization of shop floor space and to minimize fire hazards resulting from wet coatings from solvent based coating compositions, there exists a continuing need for low VOC fast curing coating formulations which cure under ambient conditions while still providing outstanding performance characteristics.
Amide acetals have been used for example in copolymerization with polyisocyanates as disclosed in U.S. Pat. No. 4,721,767. However, none of the references describe the crosslinking of amide acetal containing compositions via hydrolysis of the amide acetal groups. This invention provides amide acetal based coating compositions, which dry and cure rapidly without the potential problems created by VOC emissions.
The present invention discloses a novel catalytic process for making low color amide acetals. This process provides a rapid conversion of the reactants and also the conversion of the reactants is generally higher than reported in literature. It also discloses the use of these materials in crosslinked compositions and coatings.

This patent is subject to a terminal disclaimer.


A battery has enhanced reliability by protecting the battery from external impacts by separately installing a reinforcement structure on a casing and an electrode assembly housed in the casing. The configuration reduces or minimizes volumetric change in the dimensions due to volumetric expansion of the electrode assembly. The battery may include an electrode assembly having first and second electrode plates with a separator interposed therebetween. First and second terminal portions extending from the first and second electrode plates and a pouch casing having an open portion and for housing the electrode assembly. A pouch cover coupled and sealed with an opening of the pouch casing. The pouch cover having at least one throughhole and at least one electrode pin fastened to the throughhole. The electrode pin is electrically connected to one of the first and second terminal portions of the electrode assembly. The first and second leads are exposed outside the pouch cover and are electrically connected to the first and second terminal portions.

1. Field of the Invention
The present invention relates to a battery, and more particularly, to a secondary battery with a pouch casing having an improved reinforcement structure.
2. Discussion of the Related Art
Rechargeable secondary batteries are typically small in size and have a large storage capacity. Some examples of the batteries include nickel-metal hydride (Ni—MH) and lithium (Li) ion batteries.
Secondary batteries may be categorized as cylindrical, rectangular, and pouch type. The cylindrical batteries may use an aluminum can type structure, while the rectangular batteries typically use a rectangular aluminum can type structure. The pouch type batteries may be arranged in a thin film pouch casing.
FIG. 1 is an extracted perspective view of a pouch type secondary battery according to the related art.
Referring to FIG. 1, an electrode assembly 10 for generating a predetermined current and a pouch casing 20 for enclosing and hermetically sealing the electrode assembly 10. The electrode assembly 10 has an electrode tab 14 arranged on a side of the assembly. The electrode tab 14 is connected with a lead 15 for an electrical path to the exterior of the battery. The lead 15 has a protective tape 16 adhered to its surface and extends outside the pouch casing 20.
The pouch casing 20 includes a casing body 22. The casing body 22 has an internal space in which the electrode assembly 10 is retained. A cover 24 extends from one end of the casing body 22. A flange 23 is formed at the periphery of the casing body 22. The flange 23 may be welded with the cover 24 for creating a hermetic seal with the casing body 22. The pouch casing 20 is made of metal and resin materials in the form of a foil material.
FIG. 2 is a cross-sectional view taken along the line I-I of FIG. 1 according to the related art.
Referring to FIG. 2, the pouch casing 20 is formed of compressed composite materials. For example, a laminate structure of a thermal adhesion layer 22b, a foil layer 22a, another thermal adhesion layer 22b, and a sheathing layer 22c. The thermal adhesion layer 22b may be formed of denatured polypropylene, for example, cast polypropylene (CPP). The foil 22a may be made of a metal, for example, aluminum (Al). The sheathing 22c may be formed of a polymer resin, for example, nylon or polyethyleneterephthalate (PET). The pouch casing 20 may be sealed via heat compression, thereby joining the thermal adhesion layers of the casing body 22 and the pouch cover 24.
The above-described configuration is very thin and provides a poor protection for the electrode assembly housed in the pouch casing 20. In particular, the metal foil used for maintaining the strength of the casing is only several tens of microns thick. Accordingly, it is very weak against external impacts.
Also, the safety and reliability of the battery may be impaired if the related art pouch is disturbed.
The melting point of the thermal adhesion layer (e.g., made of CPP) of the related art pouch is about 130 to 140° C. The melting point of the electrode assembly housed in the pouch casing is also about 130 to 140° C. The temperature required to thermally weld or seal the casing body and pouch cover is about 180 to 210° C. Accordingly, during the welding of the pouch the thermal adhesion layer and the separator may melt. Also, the separator may be fixed to the thermal adhesion layer due to the high temperatures. If the thermal adhesion layer melts the Al metal film inside may be exposed, and thus creating short circuit of the electrode assembly.
FIG. 3 is a cross-sectional view illustrating a bi-cell stacked structure of an electrode assembly according to the related art.
Referring to FIG. 3, illustrating a laminate construction of positive electrode sheets 11 and negative electrode sheets 12 separated by separators 13. That is, a laminate of having a positive electrode sheet 11, a separator sheet 13, a negative electrode sheet 12, another separator sheet 13, and another positive electrode sheet. The area of each of the separator sheets 13 is greater than the area of the individual positive electrode sheet 11 and negative electrode sheet 12. Additionally, the area of the positive electrode sheets 11 is the smallest. The sheets are arranged to form the electrode assembly 10.
A swelling phenomenon occurs inside the electrode assembly 10. That is, gas may be generated inside the battery as the battery is repeatedly charged and discharged, thereby the electrode sheets may swell in the direction of the arrows as shown in FIG. 3. Additionally, the separator sheets 13 may shrink compounding the problem. As a result the positive electrode sheet 11 and the negative electrode sheet 12 may become short circuited with each other at edges.
Related art solutions to protect the battery from short circuits will be described in the following.
By way of example, U.S. Pat. No. 6,042,966 discloses a battery structure for preventing electrical shorts between an electrode tab and an edge of a pouch. The pouch includes an outer lamination layer made of a packaging insulator film, a metal foil layer, and an inner lamination layer having a polyamide layer. The inner lamination layer includes, for example, nylon, and a thermal adhesion layer sequentially formed on the inner face of the metal foil.
U.S. Pat. No. 6,106,973 discloses a pouch formed by folding a laminated film including an aluminum (Al) film at the inner side and a polypropylene film at the outer side and arranged on both sides of an electrode assembly.
The above-described battery pouches have several drawbacks including poor structural stability. Also, a stacked electrode assembly may cause a short circuit between electrodes.
Accordingly, there is a need for battery apparatus that has good structural stability and one that minimizes shorting. The present invention obviates one or more of the problems associated with related art.


A system and method for automatically allocating resources is provided. The system includes one or more components for automatically allocating one or more resources, based at least in part on data associated with the one or more resources, the data including at least one of, type data, instance data, characteristic data, and dynamically modifiable metadata. An alternative aspect of the system provides one or more components for automatically allocating one or more resources distributed on a plurality of resource allocation servers. The one or more components for automatically allocating the one or more resources can improve utilization of the capacity of the one or more resources. In an alternative embodiment the system includes an Application Programming Interface (API) operable to configure and/or control the one or more components for automatically allocating one or more resources.

As more applications and services (hereinafter "services") have become commonly available over the World Wide Web portion of the Internet (the "Web"), the number, type and complexity of resources required to support access to such services have increased. In addition, the complexity of the relationships between such resources, and the complexity of the algorithms employed to allocate such resources has increased.
Many web-based services require service consumers to register for access to a service. Such registering requires that resources be allocated to such registering consumers. Registering the increasing numbers of consumers has become more difficult because of factors including, but not limited to, the number, type, sophistication and complexity of relationships between the resources required to support such consumers coupled with the volume of consumers registering for services, the rate at which new consumers are registering for services and the volume of services available. Conventionally registering new consumers, which may include allocating one or more accounts for the new service consumers, may have required manual intervention (e.g., substituting/adding/removing resources, updating allocation algorithms, updating resource information). Such manual intervention can be time-consuming, complicated and expensive, producing resource allocation delays (and resulting registration delays) or allocation errors that negatively impact allocating resources. Consumers forced to wait for access to services may forego using the service, thus resulting in lost business for the service provider. Thus, automating consumer registration is required.
But automating consumer registration creates new problems. For example, due to the increasing number, type, complexity and relationships between resources, it has become increasingly difficult to efficiently allocate resources for consumers registering to use services available over the Web. Conventionally, allocating resources may have required a manual intervention, or the application of an allocation rule or allocation algorithm. Such interventions, allocation rules and algorithms may have required accessing information concerning resources. But the resource information, allocation rules and/or allocation algorithms may have been static, and unable to respond to the changing number, type, complexity and relationships between the resources to be allocated. The information, allocation rules and/or allocation algorithms may have become static because they were hard coded into data structures and/or programs that were inflexible and difficult to change, in some cases requiring rewriting programming code in order to change allocation algorithms.
Manual allocation and/or inflexible allocation rules may generate delays in resource allocation and/or wasteful resource allocation. For example, an allocation rule that dedicates a standard set of resources to a user registering for an application may over-allocate or under-allocate resources to that user. Such standard allocations may be artifacts of inflexible allocation rules and/or algorithms. By way of illustration, a first consumer registering for an email service may be allocated 10 Mb of disk space, but the first consumer may only undertake processing that consumes 1 Mb of disk space, thus leaving 9 Mb of disk space underutilized and/or over-allocated. The first consumer will likely not be negatively impacted by the over-allocation. But a second consumer may have 10 Mb of disk space allocated and may undertake processing that could consume 15 Mb of disk space if 15 Mb of disk space was available. The second consumer will likely be negatively impacted by both the over-allocation and the under-allocation, noticing slow and/or unsuccessful access to the service. Conventionally, adapting allocations to such consumers, if possible, may have required manual intervention. Further, adapting the allocation rules and/or algorithms employed to allocate resources to such users, if possible, may have similarly required manual intervention. Thus, such adaptations may have been foregone, resulting in inappropriate allocations and/or allocation algorithms.
Conventionally, resources for a service may have been allocated from a single logical resource. For example, all consumers of an email service may have had resources allocated by a single email resource allocation server. As the number, type, complexity and relationships between resources increases, and as the rate and volume of registering consumers increases, it becomes increasingly difficult to allocate resources from a single resource server. It has been difficult to coordinate allocating resources from multiple resource servers because of problems including, but not limited to, disparities in resource allocation algorithms, disparities in resource allocation rules, different resource descriptions and contention/timing problems.
The size and/or characteristics of services available over the Web can change, resulting in corresponding changes in resource allocation demands, which further increases complexity problems associated with resource allocation. Thus, even if a conventional allocation method was able to allocate resources for a service, it may not be able to allocate resources when the service changes size and/or characteristics (e.g., number and type of resources required) due to the increased allocation complexity.
Allocating resources to consumers is further complicated because the resources available to be allocated may change. By way of illustration, the number and type of resources available may grow or diminish at the same time that the characteristics of the resources are changing. Further, the relationships between resources to be allocated can also change. For example, at a first point in time, 100 disks of 100 Mb each may be available, but at a second point in time 75 disks of 350 Mb each may be available. Thus, static rules for resource allocation may become obsolete and lead to unsatisfactory resource allocation. While the changing numbers and characteristics of resources complicate resource allocation, adding additional services that require different allocation algorithms for the available resources can add even further complexity to resource allocation. Similarly, changing the resource mix required by a service can generate even more complexity.
Conventionally monitoring and reallocating resources, if performed at all, may have been accomplished manually and/or by inflexible programs. Thus, determining that a new resource was required, or that a new relationship between resources exists, or adapting to the new resource or relationship, if possible, may have required the manual intervention of a skilled resource allocator or the application of an outdated program. As the complexity of allocating resources to the ever-increasing number of services increases, such resource allocators can easily become overwhelmed by the volume and complexity of the resource allocation tasks and such programs can quickly produce inappropriate allocations.

System and method for describing and automatically managing resources


A method and apparatus for processing video data including multiple frames of image data in a first format. This method and apparatus include storing the video data in a first memory location, and converting a first portion of the multiple frames stored in the first memory location into a second format for storage in a second memory location, while concurrently converting a second portion of the multiple frames stored in the first memory location into a third format for display on a display.

Various types of images may be displayed on computer screens for providing information or entertainment to a computer user. These images may include photographs or video images of real life, computer generated graphics, animation, etc. In each case, the images are digitized into digital image data for display. This digital image data is typically grouped into frames of image data for processing and display. For example, a photograph may be digitized into one or more frames of image data for processing. In addition, a video is typically a sequential set of frames of image data for rapid sequential display.
The prior art describes many methods and devices for the processing of images. These methods and devices include various techniques for the capture, generation, storage, retrieval, conversion, display of digitized images.
U.S. Pat. No. 5,367,337 is directed to a system for capturing video images from various types of video signals. This is accomplished by first sampling an incoming video image signal to determine the format of the video signal and then subsequently converting the video signal into a desired format for storage and display.

Method and apparatus for integrating video capture and monitor

International Business Machines Corporation


The disclosed computer-implemented method for blocking push authentication spam may include (1) detecting an attempt by an unauthenticated source to gain access to a web resource protected by an MFA service, (2) issuing, to a mobile device of an authenticated user of the MFA service, a push authentication request to query the authenticated user about whether to allow the unauthenticated source's attempt, (3) determining, based at least in part on the push authentication request issued to the mobile device, that the authenticated user has not allowed the unauthenticated source's attempt, and (4) in response to determining that the authenticated user has not allowed the unauthenticated source's attempt, blacklisting the unauthenticated source such that the MFA service refuses to issue any subsequent push authentication requests in connection with the unauthenticated source. Various other methods, systems, and computer-readable media are also disclosed.

Security is often described as a continuum between convenience and safety. A system that requires ten layers of authentication may be very difficult to attack, but it may also be so inconvenient that it will never be used. At the opposite end, a system with no means of authentication or authorization is highly convenient for users but also highly insecure. Many systems now offer an option for Multi-Factor Authentication (MFA), which uses at least one additional piece of information beyond or in place of the traditional username and password combination. Some MFA systems may involve additional devices such as mobile phones and tablets. These MFA systems may ask the user to enter a code sent to a mobile device or to take an action on the mobile device that is then transmitted back to an authentication server to complete the login process.
One downside of MFA systems that involve mobile devices is that repeated illegitimate login attempts by malicious third parties may cause a flood of push authentication requests to the mobile device, annoying users. Some traditional systems may allow a user to block requests from being pushed to their mobile device. However, these traditional systems may be all or nothing filters that cannot allow legitimate push authentication requests through while blocking spam requests. Accordingly, the instant disclosure identifies and addresses a need for additional and improved systems and methods for blocking push authentication spam.

Systems and methods for blocking push authentication spam


Agonist analogues of amylin and related pharmaceutical compositions, and methods of treatment of diabetes and other insulin-requiring states, as well as methods of treatment of hypoglycemia, are provided.

1. Field of the Invention
The field of the invention is medicine, particularly the treatment and prevention of hypoglycemic conditions and other conditions in which enhanced amylin action is of benefit, including insulin-requiring states such as diabetes mellitus. More specifically, the invention relates to the preparation and use of agonist analogues of the peptide hormone amylin.
2. Description of Related Art and Introduction to the Invention
Diabetes mellitus is a serious metabolic disease that is defined by the presence of chronically elevated levels of blood glucose (hyperglycemia). This state of hyperglycemia is the result of a relative or absolute lack of activity of the peptide hormone, insulin. Insulin is produced and secreted by the .beta. cells of the pancreas. Insulin is reported to promote glucose utilization, protein synthesis, and the formation and storage of neutral lipids. Glucose, the principal source of carbohydrate energy, is stored in the body as glycogen, a form of polymerized glucose, which may be converted back into glucose to meet metabolism requirements. Under normal conditions, insulin is secreted at both a basal rate and at enhanced rates following glucose stimulation, all to maintain metabolic homeostasis by the conversion of glucose into glycogen.
The term diabetes mellitus encompasses several different hyperglycemic states. These states include Type 1 (insulin-dependent diabetes mellitus or IDDM) and Type 2 (non-insulin-dependent diabetes mellitus or NIDDM) diabetes. The hyperglycemia present in individuals with Type I diabetes is associated with deficient, reduced, or nonexistent levels of insulin which are insufficient to maintain blood glucose levels within the physiological range. Treatment of Type 1 diabetes involves administration of replacement doses of insulin, generally by the parenteral route. The hyperglycemia present in individuals with Type II diabetes is initially associated with normal or elevated levels of insulin; however, these individuals are unable to maintain metabolic homeostasis due to a state of insulin resistance in peripheral tissues and liver and, as the disease advances, due to a progressive deterioration of the pancreatic .beta. cells which are responsible for the secretion of insulin. Thus, initial therapy of Type 2 diabetes may be based on diet and lifestyle changes augmented by therapy with oral hypoglycemic agents such as sulfonylureas. Insulin therapy is often required, however, especially in the latter stages of the disease, in attempting to produce some control of hyperglycemia and minimize complications of the disease. Thus, many Type 2 diabetics ultimately require insulin in order to survive.
Amyloid is the name given to extracellular deposits of .beta. sheet protein filaments. Deposits of amyloid material have been reported to be found in pancreas of patients with Type 2 diabetes mellitus. Other studies have indicated that the degree of amyloid depositions increases with the degree of hyperglycemia in humans and the severity of Type 2 diabetes. Chemical analysis of pancreatic amyloid led to the surprising and unexpected discovery of the peptide hormone, amylin. Clark, A., et al., Lancet ii: 231-234 (1987). This peptide was discovered to be comprised of 37 amino acids, none of which are acidic residues, to have a disulfide linkage between the cysteine residues at positions 2 and 7, and to be C-terminally amidated. Amylin is the major protein constituent of the amyloid which is reported to be found in the pancreatic Islets of Langerhans in patients with type 2 diabetes mellitus.
It has been reported that the presence of both the intramolecular cystine bridge and the carboxy terminal amide group in the peptide structure of the synthetic molecule yield the greatest biological activity to inhibit glycogen synthesis in skeletal muscle. E.g., Cooper, G. J. S., et al., Proc. Natl. Acad. Sci. (USA) 84:8628-8632 (1987); Cooper G. J. S., et al., in Diabetes 1988, ed. Larkins, R., Zimmet, P. & Chisholm, D. (Elsevier, Amsterdam), pp. 493-496 (1989). The amino acid sequence of amylin (see FIG. 1) has 46% homology with human calcitonin gene related peptide 2 (CGRP-2).
One report states that a limited segment of the amylin molecule, residues 20-29, is a potential contributor toward amyloid fibril formation in the islets of Langerhans in Type 2 diabetes mellitus. Glenner et al., Biochem. Biophys. Res Commun. 155:608-614 (1988). It has also been reported that amino acid sequence differences between amylins from certain mammalian species occur in this region, and further investigation has focused on identifying residues linked to amyloid formation. Westermark et al., Proc. Natl. Acad. Sci. (USA) 87: 5036-5040 (1990). The study of Westermark et al. reported attempts to synthesize various 20-29 amino acid segments of amylin sequences from different species followed by a comparison of their ability to form amyloid fibrils. It was proposed that the residues 25-29 of human amylin were the most strongly amyloidogenic and that the proline-for-serine substitution in position 28, as in several rodent species, significantly inhibited fibril formation in the studied decapeptides.
Amylin is a complex peptide, and the synthesis of bioactive preparations of amylin is laborious. Amylin has also been found to have Limited solubility and limited stability in solution. We have found that rat amylin has a higher solubility and stability in solution than human amylin. This may be due in some measure, although this is not known, to the different aggregation properties of the amylins from different species. Only the human, non-human primate, and cat species of amylin have been reported to aggregate to form islet amyloid in vivo. The sequences of amylin now reported to have been isolated from a number of species are set forth in FIG. 2.
In Type I diabetes, amylin levels are severely reduced or are nonexistent when compared to normal controls. In the disease state of Type I diabetes mellitus, the .beta.-cells, which are the producers of insulin and amylin, have been destroyed by an autoimmune process. Amylin has been proposed to be useful in the treatment of diabetes mellitus and hypoglycemia, including insulin-induced hypoglycemia. It has also been proposed that the coadministration of insulin with amylin is a superior therapy to the existing administration of insulin alone, and that coadministration of amylin with glucagon for the treatment of hypoglycemia is a superior therapy to the existing administration of glucagon alone. It would be useful to provide, for such purposes and others, less complicated compounds that have the activities of native human amylin, as well as compounds which may show enhanced solubility and/or stability over native human amylin. Such compounds are described and claimed herein.

Pramlintide pro H-amylin salts and compositions