A memory circuit using a thin film transistor has been problems such as the drop in yield and the decrease in speed of response of the memory circuit due to variations in transistors. The purpose of the invention is to improve the yield and speed of the response of a memory cell by driving a word line by a voltage which is different from the logical amplitude of the memory cell. The invention is applicable to an SRAM, a DRAM, a mask ROM, and the like. A memory circuit of the invention is formed integrally with a display device for realizing a multi-functional display device.

1. Field of the Invention
The present invention relates to a memory circuit, and more particularly to a memory circuit configured with thin film semiconductor elements. The invention also relates to a display device comprising the memory circuit.
2. Description of the Related Art
In recent years, mobile phones have been widely used with the advance of the communication technology. In the future, transmission of moving images and transmission of a larger amount of information are expected. On the other hand, by reducing the weight of personal computers, those adapted for mobile communication have been produced. Information terminals called PDAs originated in electronic notebooks have also been produced in large quantities and widely used. In addition, most of such portable information equipment includes a flat panel display because of the development of display devices.
Particularly, among active matrix display devices, manufacturing of a display device using a low temperature poly-silicon thin film transistor (hereinafter, a thin film transistor is referred to as a TFT) has been promoted in recent years. By using the low temperature poly-silicon TFT, a signal line driver circuit can be integrally formed around a pixel portion as well as a pixel. Thus, the low temperature poly-silicon TFT allows the compactness and the high definition of a display device and it is expected to be more widely used in the future.
As the one using the low temperature poly-silicon TFT, a controller circuit, a CPU, and a memory circuit in addition to the pixel and the signal line driver circuit have been produced. (For example, Non-patent Document 1)
[Non-Patent Document 1]
Nikkei Electronics, No. 841, Feb. 17, 2003, pp. 123-130
Forming such a logical circuit integrally with a pixel by using a TFT contributes to the formation of a display system on a glass substrate.
A memory circuit is a typical circuit which is required for forming a system. The memory circuit includes a volatile memory circuit such as an SRAM and a DRAM and a nonvolatile memory circuit such as a flash memory and a mask ROM.
The memory circuit comprises a Y decoder 201, a Y selector 202, an X decoder 203, and a memory cell array 204 as shown in FIG. 2. The X decoder 203 selects a word line based on an inputted address signal. The Y decoder 201 selects a switch which is included in the Y selector 202 and connected to a bit line based on an inputted address signal similarly. An address is inputted to the Y decoder 201 and the X decoder 203 so that one memory cell in the memory cell array 204 can be specified and data can be written in or read from the specified memory cell.
Note that the X decoder and the Y decoder are referred to as a row decoder and a column decoder respectively in some cases. They are indicated as an X decoder and a Y decoder in this specification. In addition, a wire in the X direction and a wire in the Y direction which are included in the memory cell array 204 are indicated as a word line and a bit line respectively. The word line is driven by the X decoder 203 in FIG. 2. The X decoder 203, the Y decoder 201, the Y selector 202 and the memory cell array 204 are generally driven by a common power source, a high potential power source of which is indicated as an VDD and a low potential power source thereof is indicated as a VSS in FIG. 2.
A memory element had better have as small memory cell as possible for large memory capacity. It requires the reduction in the number of transistors configuring a memory cell. Each of a mask ROM and a DRAM has a memory cell configured with one transistor while an SRAM has a memory cell configured with six transistors. In addition, such a transistor serves both for writing and for reading. The explanation is made on the case of the SRAM hereinafter.
FIG. 3 shows a memory cell of a conventional SRAM. Only one memory cell 302 is shown in FIG. 3 for simplification, however, the number of memory cells is not limited to one. The memory cell 302 of the SRAM comprises an inverter circuit configured with a TFT 308 and a TFT 310, an inverter circuit configured with a TFT 309 and a TFT 311, and switching transistors 312 and 313.
A writing operation thereof is explained below. When the potential of a specified word line 305 becomes Hi by an X decoder 301, the switching transistors 312 and 313 are turned ON so that data is written in a pair of inverter circuits configured with the TFTs 308 to 311. When the writing is finished, the switching transistors 312 and 313 are turned OFF so that the data which has been written in a pair of inverters is held.
A reading operation is explained next. Firstly, bit lines 303 and 304 are precharged at a certain potential from the outside of the memory cell array. Generally, a precharge potential is set to the nearly middle of a power source of a pair of inverters in a memory cell. After the completion of the precharge, the bit lines 303 and 304 are released from the precharge potential so that the bit lines 303 and 304 are in the floating state. Next, When the potential of the word line 305 becomes Hi and the switching transistors 312 and 313 are turned ON, the bit lines 303 and 304 are each driven in the opposite direction by the pair of inverters and a voltage difference therebetween is detected by a sense amplifier (not shown) so that the data is called out.

Memory circuit, display device and electronic equipment each comprising the same


Gas is generated at a controlled rate from a liquid and solid phase combination that generated gas upon contact, by using diffusive transport of the liquid toward the solid phase surface to prolong the rate of gas generation, with a variety of alternatives for controlling the rate of diffusive transport. This system is useful in infusion devices for delivering medications or other beneficial liquids from a retaining pouch at controlled rates over a prolonged period of time.

1. Field of the Invention
This invention resides in the field of controlled liquid delivery devices, such as those used in the administration of medicaments. This invention also relates to the chemistry of gas generation used as the driving force in controlled liquid delivery devices, and the types of materials used as sources of the gas.
2. Description of the Prior Art
Infusion pumps are devices that eject liquid materials at continuous and prolonged rates by generating gas in a contained enclosure that forces the liquid material out of a bladder or reservoir retained within the enclosure. Pumps of this type are useful for the controlled delivery of drugs and other medications to patients, eliminating the need for periodic injections or other modes of administration, and avoiding the usual profile of a high initial concentration of the drug in the bloodstream followed by a gradual decline.
Numerous patents have issued on inventions relating to infusion pump design. Representative examples are U.S. Pat. Nos. 3,023,750 (Baron, Mar. 6, 1962), 4,379,453 (Baron, Apr. 12, 1983), 3,718,236 (Reyner et al., Feb. 27, 1973), 5,398,850 (Sancoff et al., River Medical, Inc., Mar. 21, 1995), 5,398,851 (Sancoff et al., River Medical, Inc., Mar. 21, 1995), 5,588,556 (Sancoff et al., River Medical, Inc., Dec. 31, 1996), 5,578,005 (Sancoff et al., River Medical, Inc., Nov. 26, 1996), 5,558,255 (Sancoff et al., River Medical, Inc., Sep. 24, 1996), and 5,106,374 (Apperson et al., Abbott Laboratories, Apr. 21, 1992), all of which disclose various devices that generate pressurized gas to expel a liquid from a liquid delivery device, utilizing chemically reactive sets or combinations of gas-generating chemicals.
The Baron and Reyner et al. patents disclose liquid delivery systems powered by the generation of carbon dioxide gas by reactive chemical combinations, but they lack means to control the reaction rate or the resulting liquid flow. The Reyner et al. patent discloses a system that produces a series of sequential chemical reactions that release gas in a series of discrete releases over a period of time.
The systems disclosed in the Sancoff et al. patents achieve controlled delivery primarily by extending the reaction time of the reactants. This is achieved by adding a rate-limiting moiety to a solid tablet consisting of an alkaline metal carbonate, and then submerging the tablet in a bath of aqueous acid media. The Sancoff et al. patents specify separate storage of the chemical reactants prior to use, with no premixing. The reaction rate upon initial contact of the chemicals is very high, and drops off rapidly with time as the reactants are consumed. The rate of reaction is a function of the concentration of remaining chemicals, and as the liquid acid reactant concentration decreases significantly over time, the reaction rate and hence the rate of carbon dioxide generation are reduced. While the exposed surface area of solid reactant increases with time, this does not fully compensate for the decreased liquid reactant concentration. Accordingly, a very large portion of the generated gas is wastefully vented through a pressure relief valve during the early part of the infusion process.
The Sancoff et al. patents disclose the use of two separately disposed chemical reactants, one liquid and one solid. Both reactants are dangerous to handle, and can pose a health risk to patients and health care workers in the event of a leak. To initiate the reaction in the device, a barrier membrane is ruptured and the solid alkaline tablet is manually pushed into the acid solution. This is accomplished by pressing against a portion of the exterior wall of the device, the wall portion being of reduced thickness. Unfortunately, this reduced thickness portion is a prone to leakage. Also, the pressing of the tablet through the barrier membrane must be done rapidly. Otherwise, back pressure from the resulting gas can arrest the movement of the tablet through the membrane when the tablet is only part way through. A tablet resting part of the way through the membrane can cause failure of the device.
The Apperson et al. patent discloses an infusion device which releases compressed gas from a storage cylinder at a controlled rate to power an infusion device. Gas pressure in this device is maintained by use of a pressure relief valve. In order to store the required amount of gas to power the device, it is necessary to store either a large volume of gas under low pressure or a small volume under high pressure. Neither is desirable since low pressure storage is subject to space limitations and high pressure gas entails excess weight and cost, as well as the risk of damage and injury. High pressure gas also requires a relatively high pressure gas regulator or relief valve, both of which are expensive.
Further disclosures of potential relevance to the present invention include U.S. Pat. Nos. 3,888,998 (Sampson et al., The Procter & Gamble Company, Jun. 10, 1975), 3,992,493 (Whyte et al., The Procter & Gamble Company, Nov. 16, 1976), 4,007,134 (Liepa et al., The Procter & Gamble Company, Feb. 8, 1977), and 4,025,655 (Whyte et al., The Procter & Gamble Company, May 24, 1977). These patents disclose the use of carbon dioxide loaded (adsorbed) onto molecular sieve materials, with subsequent desorption for the purpose of carbonating water for use in carbonated beverages. These systems are designed to rapidly desorb carbon dioxide into water over a period of about one to five minutes only, and for the sole purpose of carbonating water. The molecular sieves can be formed into various shapes and loaded with adsorbed carbon dioxide, then immersed into water, a portion of which is adsorbed in preference to the previously adsorbed carbon dioxide, producing carbon dioxide gas bubbles which carbonate the water for use in beverages. The entire gas release process generally takes place in less than about five minutes, and no attempt is made to capture work from the released gas.

Controlled gas generation for gas-driven infusion devices


A weight and spring assisted actuating assembly for pressuring, with air, a liquid in a tank includes a reciprocating piston that is freely movable with a charging compartment. Appropriate manipulation of the charging compartment or, if applicable, the housing within which it is disposed, results in movement of the piston and causes outside air to enter the charging compartment and, subsequently, to exhaust into the tank to thereby pressurize the contents thereof. In accordance with an especially advantageous application of the actuating assembly, an air pressurized toy water gun is realized by ejecting air from the charging compartment into the water containing tank of the water gun.

1. Field of the Invention
The present invention is directed to a self contained means of pressurizing a fluid reservoir with air, creating a pressure differential between the contained fluid and the ambient atmosphere that propels fluid from, for example, a water ejecting toy gun or a dispensing container in either a continuous stream or in a selective manner.
2. Discussion of the Prior Art
Water guns have for decades been a very popular child's toy. Since the toy industry is very competitive, hundreds of different style water guns have been developed in an attempt to profit from the toy's inherent popularity. The most traditional forms of water guns are activated by a manual pumping action through the trigger. While such pump action water guns work, they are limited in the distance the water traveled, the amount of water projected and the duration of the pumping cycle. In an attempt to improve upon water guns, the toy industry has developed pressure activated water guns. Such pressure activated water guns work upon the principle of pressure differentials between the water held within the toy and the atmosphere. The water within the toy is subjected to a pressure higher than that of the ambient air. As a result, when the water within the toy is given an avenue of escape, the water will stream out under pressure.
Two primary types of pressure activated water toys exist. The first type is when the water itself is worked to a pressure higher than that of the ambient air. This type of water gun is exemplified by the following: U.S. Pat. No. 3,197,070 to Curtis F. Pearl et al, shows a water gun activated by trapping water in a collapsible area. As the device is collapsed, the pressure of the water builds, spraying the water out of the one small orifice left within the pressured area. Once the confined area is fully collapsed, the reexpansion of the area draws forth more water from a reservoir, thus priming the water gun for another cycle. U.S. Pat. No. 4,854,480 to Robert S. Shindo and U.S. Pat. No. 4,735,239 to Michael E. Salmon et al, both show toy water devices that use an elastic bladder to pressurize water. The bladders are filled with high pressure water, and the bladders respond by elastically deforming. The source of pressurized water is then removed and the water within the expanded bladder is held in place by a clamping device activated by a trigger. The water gun is used by selectively releasing the clamp, allowing the water to flow from the expanded bladder.
The second type of pressure activated water toys are toys that use air pressure to force water through squirt channels. Such toys that use this technology are exemplified by U.S. Pat. No. 4,214,674 to Jones et al. The Jones patent shows a two piece apparatus consisting of a pressurized water reservoir and a discharging gun. The Jones patent has a hand operated air pump. By way of additional example, U.S. Pat. No. 4,239,129 to Gary F. Esposito describes a water pistol and/or flashlight structure which includes a reciprocal pump within a liquid chamber or tank located itself within the gun housing. Like the pump employed by Jones et al, the pump of Esposito is a hand operated structure used to pressurize air within the tank after water has been added, and a trigger is used for subsequent release of the water. Battery operated lights and sound are also provided.
A primary disadvantage of the water guns employing a hand operated actuator to achieve pressurization is just that, they require the child to suspend play, spend a substantial amount of time operating the actuator, and then resuming play. It would therefore be highly desirable to provide a water gun in which the act of pressurizing the water tank closely does not require suspension of play or but actually becomes an exciting and enjoyable aspect of play.
In other fluid dispensing fields, there are even more compelling reasons for the availability of a simple, yet efficient manually operable pressurizing actuator. Specifically the use of chlorofluorocarbons (CFCs) and other flammable and or chemical pressurizing agents, though known to be harmful to the environment, are still in wide spread use.

Weight & spring assisted pumping actuator for fluid pressurization


Control device for hydraulic turbines configured to adjust the resistant torque provided by the generator to the movement of the impeller of an hydraulic turbine so that a stable pressure is set at the inlet (Pi) and at the outlet (Po) regardless of the circulating flow rate (Q), and to adjust the electrical energy produced by the turbine to achieve the desired hydraulic behavior, the device comprising a controller and a power device; wherein said controller is connected to a pressure detector at the inlet (Pi) and at the outlet (Po) and to a flow-meter for obtaining the circulating flow rate (Q), as well as to a power sensor for measuring the power of the turbine; all this, in such a way that the controller acts on the power device for causing the application of the braking torque necessary to maintain a stable set-point value on the turbine.

Nowadays, in water supply networks, a wide range of regulating elements are available which allow adjusting the values of water flow rate and pressure, at different points in the network, with the aim of meeting the needs of users.
An example of this is the case of the regulating valves which are capable of causing a frictional loss pressure to maintain a constant pressure at the outlet regardless of the flow rate. These valves are generally used to reduce the pressure in certain parts of the network, which prevents breakages or decreases the level of leakages.
On numerous occasions it has been tried to use hydraulic turbines to replace said regulating valves and to achieve an electrical exploitation, the major drawback being the adjustment of the turbine to the flow rate values changing over time (since they depend on the users demand), further having to maintain a constant pressure at the outlet (pressure regulating valves) or at the inlet (pressure sustaining valves).
A typical case of this flow rate variability is constituted by urban potable water supply networks, in which the flow rate at nighttime is very low compared to the water demand at daytime consumption peaks.
The applicant knows the existence of numerous devices or means for adjusting the operation of a turbine depending on the circulating flow rate or pressure differential to be exploited. Such systems are usually mechanical and are present in high power turbines for hydroelectric exploitation. As an example of this, devices can be mentioned that are based on the orientation of the blades of the turbine, as it is the case with Kaplan turbines. These systems seek to maintain a high performance and a given rotation rate regardless of the flow rate to be processed by the turbine and pressure differential to be exploited, since they are usually equipped with synchronous generators that must rotate at a given speed to inject the energy into the grid.
These systems have the disadvantage of their high mechanical complexity, especially when they are to be installed in a micro-turbine for energy recovery in urban supply networks.
Similarly, the applicant knows the existence of hydraulic micro-turbines installable in supply networks which, however, do not have a suitable control system that allow them to adjust its operation to the required conditions of flow rate and pressure. Therefore, these turbines are not able to ensure a constant pressure at the outlet, but it depends on the circulating flow rate.
In an attempt to improve the hydraulic operation of these micro-turbines, assemblies have been carried out by placing a reducing valve at the outlet or a stopper at the inlet in order to thus achieve a level of constant pressure at the outlet regardless of the flow rate.
In this regard, it is noteworthy that although they achieve their objective hydraulically, they result very energy inefficient because they do not allow exploiting all the available pressure differential, part of which is lost by friction in the regulating valve, the stopper or any other mechanical element.
In turn, and for a completely opposed aspect of such systems, the applicant knows the so-called "regenerative braking systems" used in various fields of industry, which allow regulating the braking torque of a generator and therefore the generated electrical power.
Typically, such regenerative braking systems are connected to generators or servomotors of the brushless type.
Practical examples of this can be found in hybrid vehicles (which recover energy from braking to recharge batteries), in new generation elevators, in servomotors for braking of shafts, etc.


An assembly and method for providing electromagnetic interference isolation. The assembly includes an enclosure which has a first panel and a second panel. Bus bars extend through the first panel and the second panel. A mounting plate is positioned between the first panel and the second panel. The mounting plate has locating members thereon. A plurality of inductive cores are positioned proximate the locating members, the inductive cores having openings through which the bus bars extend. The inductive cores are precisely positioned in the enclosure to facilitate the electromagnetic interference isolation.

Electronic equipment employing digital techniques, such as computing devices, and other electronic or electrical equipment, such as switching power supplies, cause electromagnetic interference (EMI) which can both be radiated and conducted. Designers and users of such equipment must be concerned with suppression of conducted EMI or noise because the noise can interfere with proper operation of other equipment which could be necessary to health and safety. Furthermore the U.S. Federal Communications Commission (FCC) and others have established regulations and standards regarding EMI emissions.
It is known to place a power line interference filter between the power source and the equipment causing the EMI. One such filter which has been used on power systems includes a plurality of generally cylindrical capacitors arranged in a generally rectangular array. Several ferrite inductive cores are mounted on one side of the array and feed through bus bars are passed through these inductors. Capacitor bus bars are connected to terminals at one end of each capacitor and are typically brazed to the feed through conductors. Terminals extending from the other ends of the capacitors are shorted by a shorting plate.
Another such filter is shown in U.S. Pat. No. 4,737,745 which describes an electromagnetic interference filter assembly having a pair of magnetic cores each having a central opening. The cores are mounted with their openings aligned along a common axis and feed through conductors pass through the openings. Two arrays of capacitors are mounted on opposite sides of the cores and capacitor bus bars serve to electrically connect corresponding ones of these capacitors in each array. A portion of each capacitor bus bar includes an aperture which is aligned along the common axis and through bolts which lie along the common axis which are used to hold the feed through conductors and capacitor bus bars in electrical contact with each other.
In many known filters, the magnetic cores and other electronic components are maintained in position by a potting material. This makes the precise positioning of the components difficult as the potting material is first introduced to the assembly as a liquid and must harden. Consequently, additional mechanical devices must be employed during manufacture to maintain the positioning of the components as the potting material solidifies. In addition, as the potting material solidifies, stresses may be introduced to the magnetic cores, causing magnetostriction, thereby reducing the effectiveness of the filter.
Although such known filter assemblies generally perform their intended function, it is desirable to provide an EMI filter assembly in which the electrical components are precisely located and stresses on the electrical components are reduced or controlled. In addition, it is desirable to provide filters which are smaller in size and which are easier to assemble than the filters known in the art.

Electromagnetic interference filter assembly


A method for authentication in an electronic device is provided, comprising: receiving a touch pattern, the touch pattern including a set of points; determining, by a processor, whether the touch pattern is valid by validating a first portion of the touch pattern, the first portion not including at least one of the set of points; when the touch pattern is determined to be valid, unlocking the screen; and when the touch pattern is determined to be invalid, holding the screen locked.

Thanks to recent development in the electronic communication industry, portable electronic devices, such as mobile communication terminals (e.g., cellular phones), electronic organizers, Personal Digital Assistants (PDAs) have become necessities of modern life. Such electronic devices often use touch screens as a means for user input in combination with screen lock mechanisms that restrict access to those touchscreens. FIG. 1 depicts an example of one such screen lock mechanism. As shown, the screen lock provides a slide bar 11. When the slide bar 11 is moved to the right, the screen of the portable electronic device is unlocked. However, this mechanism is not completely secure because it allows the screen of the portable device to be unlocked by just about anyone.

Method and device for screen unlocking of electronic device


Formation of a drug into microspheres by an oil-on-water solvent evaporation process in which a mixed solvent of at least one water-insoluble solvent and at least one water-miscible solvent is used as a solvent of an oil phase. A fatty acid or a salt thereof or at least one glycerin fatty acid ester and/or at least one propylene glycol fatty acid ester are added to the mixed solvent. The oil phase may also comprise the mixed solvent; a fatty acid or a salt thereof; and at least one glycerin fatty acid ester and/or at least one propylene glycol fatty acid ester. This oil phase is mixed and emulsified with an aqueous phase to form an oil-in-water emulsion. The emulsion with a drug contained therein is then subjected to an oil-in water solvent evaporation to produce the microspheres. The resulting drug-containing microspheres contain the drug at a high concentration and slowly release from the initial stage after administration.

1) Field of the Invention
This invention relates to a process for the production of sustained release microspheres of a drug, and especially to a process for producing, by O/W solvent evaporation, microspheres which contain a drug at high concentration.
2) Description of the Related Art
O/O, W/O/W and O/W solvent evaporation methods have heretofore been known for the formation of microspheres.
Appropriate for efficient incorporation of a drug in microspheres is O/O solvent evaporation which uses a water-miscible solvent as an inner phase and a silicone oil, vegetable oil or the like as an outer phase. This technique however involves many problems such as the use of a solvent in a large volume and the need for heating upon drying.
Japanese Patent Application Laid-Open (Kokai) No. SHO 62-201816 discloses a W/O/W solvent evaporation method, in which the viscosity of a W/O emulsion is adjusted to 150-10,000 cp for efficient incorporation of a drug. However, W/O/W type microspheres have a three-phase structure so that the process requires complex steps. It is also necessary to adjust the viscosity of the inner water phase by using gelatin or the like.
O/W solvent evaporation requires a relatively small amount of an organic solvent. When this method is applied to a water-soluble drug, most of the drug is distributed to the outer water phase. This has led to the drawback that the amount of the drug incorporated in the resulting microspheres is extremely small.
According to general O/W solvent evaporation methods, the resulting microspheres show such release behavior that the release of the drug is relatively slow in the initial stage after administration but becomes faster as time goes on.

Process for producing drug-containing microspheres by oil-in-water evaporation process


An applique for affixation to a surface of a video game cartridge. The applique is a thin profile sheet so that, when it is affixed to the game cartridge, it does not appreciably alter the dimensions of the cartridge. The applique is provided with a first side on which indicia is printed and spaces are provided where information can be recorded with respect to the highest score achieved by a player playing the game. The first surface of the applique can be plasticized so that information can be written in the appropriate locations and erased once a particular high score is surpassed. An opposite side of the applique is provided with an adhesive to effect affixation of the applique to the game cartridge body.

The video game industry has burgeoned during the decade of the 1980's. An individual only need visit a toy or game shop or video rental facility, and he or she becomes quickly aware of the hundreds of offerings in the vide game area. Choices such as MARIO BROTHERS, SUPER MARIO BROTHERS, ADVENTURE ISLAND, and various games having, as "participants", well-known cartoon characters are available. Such games are manufactured and offered by companies such as NINTENDO, SEGA, GENISIS, etc.
In playing games of a nature as discussed above, points are scored, and a score is achieved in view of the occurrence of a number of events as a participant plays the games. The higher the point total, the more effective the player has been and the more expert he or she is in the particular game.
Typically, one particular player may want to keep track of the highest score he or she has achieved. In most cases, this is done by the person remembering the highest point total he or she has every acquired. In other cases, a number of individuals--the same on-going group, for example--may, on a regular basis, compete against one another. For example, siblings in one family, or a number of neighborhood friends, might play a particular game which happens to be the fad at any time. The competition can be intense to achieve a higher score than any previous player. In circumstances such as these, it is desirable that the highest score anyone achieves not be left to memory. It is, therefore, advantageous to memorialize the score at a convenient and accessible location so that the statistics with regard to the highest score anyone has every achieved from the group be able to be readily ascertained.
As will be able to be seen, the memorialized information would, typically, be subject to frequent changes. Consequently, any manner in which memorialization is provided should be such that it can be easily and quickly updated as changes occur.
It is to these dictates and problems of the prior art that the present invention is directed. It is a device for permitting memorialization of information regarding the highest score achieved in playing a video game which takes into account all desirable characteristics for such a device.


An electronic musical instrument enables a phrase that is stored as audio waveform data to be played back at an arbitrary tempo. The instrument includes an operator that allows the performer to change the readout position of the waveform data manually, enabling the performer to increase, decrease or reverse the speed of waveform data playback temporarily. Upon ceasing use of the operator, the playback of the waveform data returns to synchronization with the previously set tempo at a readout position that would be the current readout position had the operator not been used by the performer.

1. Field of Invention
Embodiments of the present invention relate to an electronic musical instrument. In particular, embodiments of the invention relate to an electronic musical instrument in which a phrase is played back at a tempo that has been set by a user, and in which the user may temporarily change the tempo at which the phrase is played back using a readout position change operator.
2. Related Technology
Electronic musical instruments that play back waveform data representing a phrase comprised of a plurality of bars of musical tones have been known for some time. Some electronic musical instruments allow the playback tempo of the waveform data to be changed. In such instruments, the original tempo of the waveform data is compared to the tempo at which playback is to be carried out, and a difference is determined. Playback of the waveform data is then performed based on the difference. However, it is not possible to change the playback tempo of the waveform data once playback has begun. In this regard, the applicant has proposed in Japanese Unexamined Patent Application Publication (Kokai) Number 2001-188544 an electronic musical instrument that allows a tempo change to occur during playback of waveform data. In this system, a tempo difference is determined at specified periods during playback and playback is carried out while successively modifying the playback position for the waveform data in conformance with the tempo difference at each period.
Other known electronic musical instruments allow the readout position of waveform data to be controlled by the user through the use of an operator. However, in such instruments, the user directly controls the readout position of the waveform data without reference to the amount of the adjustment in units of musical time, making it difficult to adjust playback to a desired position. In this regard, the applicant has proposed in U.S. Published Patent Application Number 2002-0046639 an electronic musical instrument in which the user is enabled to adjust the readout position of waveform data in units of musical time. This enables the performer to adjust the readout position in a manner that produces a predictable performance.
However, in the aforementioned electronic musical instruments, if the readout position of the waveform data is changed during playback at a tempo that has been previously synchronized to another performance such as an accompaniment, the resulting change in readout prevents playback from returning to synchronization with the accompaniment when the readout position change is canceled.


The pump controller determines pump load torques (T.sub.r1, T.sub.r2) from tilting signals (.theta..sub.1, .theta..sub.2) of hydraulic pumps and delivery pressure signals ( P.sub.D1, P.sub.D2) of the hydraulic pumps based on T.sub.r1 =K.multidot..theta..sub.1 .multidot.P.sub.D1 and T.sub.r2 =K.multidot..theta..sub.2 .multidot.P.sub.D2 (K: constant), and adds these pump load torques to provide a resulting value as an engine load torque signal (T). Using the signal (T) and an engine revolution speed signal, an engine controller determines a fuel injecting rate to control a pre-stroke actuator. Simultaneously, the engine controller calculates target injection timing not to change fuel injection start timing, thereby controlling a timer actuator. This makes it possible to control the fuel injection rate with good response and high accuracy following load fluctuation, achieve improved combustion, and hold a fuel injection period within an optimum angle range. As a result, optimum combustion is achieved and such a deterioration of exhaust gas as the generation of NO.sub.x and black smoke can be avoided.

1. Field of the Invention
The present invention relates to an engine control system for a construction machine, and more particularly to an engine control system for a construction machine such as a hydraulic excavator wherein a diesel engine having an electronic fuel injection device (electronic control governor) is used as a prime mover.
2. Description of the Related Art
A construction machine such as a hydraulic excavator generally includes at least one hydraulic pump for driving a plurality of actuators, and a diesel engine is used as a prime mover for rotatively driving the hydraulic pump. The diesel engine is controlled in injected fuel amount and fuel injection timing by a fuel injection device. With recent development of electronic control in the fuel injection device, in particular, a fuel injection rate has also become freely controllable in addition to the injected fuel amount and the fuel injection timing. As a result, good combustion is realized and engine performance is improved in a wide range.
In a fuel injection device for a diesel engine disclosed in JP, A, 1-121560, for example, a valve opening pressure is controlled such that it is lowered to stabilize an injection rate in a low-speed, low-load region, and is raised to increase the injection rate and shorten an injection period for avoiding the generation of black smoke in a low-speed, high-load region.
Further, the fuel injection timing has become freely controllable by determining the optimum injection timing depending on a status variable such as related to engine revolution, which also contributes to achieving good combustion.
Earlier timing of fuel injection provides a higher combustion temperature of fuel injected into a cylinder and hence better fuel efficiency (fuel consumption). As stated in, e.g., "Mechanization of Construction" (1996 DECEMBER No. 562), an article titled "Overview and Inspection/Servicing of Diesel Engine Adapted for Exhaust Gas Regulation (No. 2)", page 63, however, NO.sub.x meaning NO and NO.sub.2 together, which are said to be responsible for photochemical smog, generally tends to be produced during high-speed, high-load operation. To make exhaust gas clean, therefore, a method of delaying the fuel injection timing during the high-speed, high-load operation, where NO.sub.x tends to be produced, is employed.

Engine control system for construction machine

Hitachi Construction Machinery Co., Ltd.


A screw block installation structure for a junction box in which a screw block is installed to a screw block attaching portion having a screw block housing space in a component attachment block in a junction box, the component attachment block is housed together with the screw block inside a frame, and a connecting member is screw-connected to a screw member of the screw block, the screw member having a vertical axis of the screw block, wherein a lateral side opening is disposed in the screw block attaching portion, and the screw block is laterally installed to the screw block housing space through the side opening is provided.

1. Field of the Invention
The present invention relates to a screw block installation structure for a junction box. The installation structure is used for installing a screw block for screw-connecting a bus bar or a wire-equipped terminal in a junction box mounted on a vehicle or the like.
2. Description of the Related Art
Various junction box structures have been proposed in order to fasteningly connect a bus bar which is made of a conductive metal in a junction box, and which is in a junction box, and an external wire-equipped terminal, to a bolt upstanding in the junction box, by using a nut.
For example, PTL 1 discloses a configuration (not shown) where a protector additionally disposing portion is formed on a vertical side wall of a synthetic resin-made bottomed junction box body of a junction box, an upper end portion of the protector additionally disposing portion is cut away, a pair of right and left bus bars are placed in parallel in the cutaway (in the junction box body), the bus bars have bolt insertion holes, respectively, a pair of wire-equipped terminals are housed in a synthetic resin-made protector, and planer electric contacting portions of the wire-equipped terminals are screw-connected to the bus bars by bolts, respectively in a state where the electric contacting portions are projected from the protector to the outside.
Furthermore, PTL 2 discloses a configuration (not shown) where a bus bar, a relay, a fuse, and a fusible link are housed or mounted in a synthetic resin-made case body (frame) which vertically passes through a junction box, an external wire-equipped terminal is covered by a terminal cover, an electric contacting portion of the terminal which is projected from the terminal cover is screw-connected to a terminal portion of the bus bar, and an upper cover and a lower cover are attached to the case body.
As a junction box structure other than the above-described ones, there is a screw block installation structure for a junction box shown in FIG. 10. In the screw block installation structure, a bolt block (screw block) 73 including: a metal-made bolt 71 which is upward directed; and a synthetic resin-made block body 72 which fixes a lower portion of the bolt 71 is upward inserted from the lower side into a vacant chamber 75 which vertically passes through a synthetic resin-made component attachment block 74, to engage it.
An engagement arm (not shown) is upward projected in the vacant chamber 75 of the component attachment block 74, the bolt block 73 enters the vacant chamber 75 while outward deflecting the engagement arm, and then the engagement arm inward returns to, for example, engage the bottom surface of the bolt block 73. The component attachment block 74 is upward installed from the lower side together with the bolt block 73 to the inside of a synthetic resin-made frame (not shown). The bolt 71 is upward passed from the lower side through a bolt insertion hole of a bus bar which is made of a conductive metal, and which is previously installed into the frame, an external wire-equipped terminal (not shown) is passed over the bolt 71, and the bus bar and the wire-equipped terminal are fasteningly connected to each other from the upper side by a nut.

Screw block installation structure for a junction box


The present invention relates to methods for the rejuvenation of cupric oxide having adsorbed arsenic from arsenic contaminated water. The rejuvenated cupric oxide may be recycled to again react with and adsorb arsenic in arsenic contaminated water.

Arsenic contaminates many aquifer systems worldwide and is commonly detected in ground water at concentrations exceeding current drinking water maximum contaminant levels. Arsenic is associated with a number of adverse effects on human health and is considered to be a human carcinogen.
Arsenic is a redox-sensitive element. As a result, arsenic may be present in a variety of redox states. In most aquifer and ground water systems having arsenic (As), the arsenic species are generally present as arsenate (As5+) or arsenite (As3+).


An apparatus for measuring blood flow repeatedly segmentally scans a region of in vivo tissue with a coherent light beam. Each scanning segment comprises a scanning period during which the light beam is scanned and a rest period during which the light beam is not scanned. During the rest period, the light beam is directed at a measuring point of the in vivo tissue. Measurement data is obtained dependent on the intensity of scattered light from the measurement point. The measurement data is time series data of chronological changes in the intensity of scattered light caused by blood in the in vivo tissue. The blood flow rate is calculated from frequency-analysis of the time series data.

The present invention relates to an apparatus for measuring blood flow, and more particularly to an apparatus for measuring blood flow for noninvasively obtaining blood flow information.
Apparatuses employing laser beam irradiation for noninvasively measuring data relating to blood flow within in vivo tissue are well known. Most of these prior art apparatuses project a laser beam onto the in vivo tissue so as to obtain a speckle pattern by interference among the rays of light scattered by corpuscles within the tissue. The speckle pattern varies with the movement of the corpuscles and it is possible to obtain a speckle signal proportional to the corpuscle velocity by, for example, measuring the variation in intensity of the light reflected from a single point. Thus in apparatuses of this type, data relating to blood flow is obtained from variations in the speckle signal.
In one such prior art method of obtaining blood flow data, the measurement is carried out by using optical fiber probes for detecting time-course variation in the intensity of light reflected at selected measurement points. This method is directed solely to obtaining data in respect of a single point and, therefore, does not allow observation of blood flow distribution over a given area.
There is also known a method of measuring blood flow distribution by two-dimensionally scanning the in vivo tissue with a laser beam. This method is described in Japanese, Patent; Public Disclosure Sho 63(1988)-214238 which discloses using a mirror to scan the in vivo tissue surface with a laser beam spot that has been linearly expanded by a cylindrical lens. The reflected scattered light is detected with an image sensor. Also, this method is described in Japanese Patent Public Disclosure Sho 64(1989)-37931 which discloses using a light deflecting element for reciprocally scanning the in vivo tissue surface with a light spot at a prescribed, scanning period. Blood flow data is derived from the difference between two light signals obtained from the same spot at two points of time separated by a prescribed time interval.
Since these prior art measurement methods require continuous scanning involving the reciprocal movement of irradiating light with respect to the in vivo tissue surface, a prerequisite of their use is that the in vivo tissue under examination be maintained stationary throughout the measurement. Specifically, since the data is compared and calculated at every measurement point within the measurement region during every scanning cycle, any shift in the measurement points would affect all of the measurement data and immediately deprive it of reliability.
Moreover, while the two-dimensional scanning enables spatially continuous measurement, it is intermittent in terms of time from the viewpoint of any given single scanned point. As a result, the frequency of the speckle signal obtained is dependent on the scanning frequency. Where measurement is conducted with respect to rapid blood flow such as encountered in the eye fundus, for example, the speckle signal falls in a high frequency band and, with the conventional methods, it becomes necessary to increase the scanning speed accordingly. This makes it necessary to use a more complex apparatus.


The present invention relates to a novel catalyst used for homopolymerization of an olefin of 2 or more carbon atoms or for copolymerization of two or more olefins of 2 or more carbon atoms, as well as to a process for producing an olefin polymer using said catalyst. High molecular olefin polymers can be produced at a high yield, by homopolymerizing an olefin or copolymerizing olefins using a catalyst system consisting of a transition metal compound of the general formula M(R).sub.l (OR').sub.m X.sub.n-(l+m) and an aluminoxane or a catalyst system comprising a transition metal compound of the general formula M(R).sub.l (OR').sub.m X.sub.n-(l+m), an aluminoxane and an organic compound having at least 2 hydroxyl groups.

Conventional processes for producing olefin polymers generally employ a catalyst system consisting of a solid titanium compound (composed mainly of titanium trichloride) and an organoaluminum compound, or a catalyst system comprising a solid which is titanium tetrachloride supported on magnesium chloride, an organoaluminum compound and an electron-donating compound. Also, there is proposed a process using a polymerization catalyst consisting of a cyclopentadienyl compound of titanium, zirconium or hafnium and an aluminoxane [e.g. Japanese Patent Application Kokai (Laid-Open) No. 19309/1983 (U.S. Pat. No. 4,542,199), Japanese Patent Application Kokai (Laid-Open) No. 217209/1985]. These processes using said polymerization catalysts are defective in that the olefin polymers, particularly, the propylene polymer obtained has a small molecular weight.
Meanwhile, a process for producing olefin polymers is proposed which uses, as part of the catalyst components, Ti(OR).sub.n X.sub.4-n and an aromatic hydrocarbon compound having at least 1 hydroxyl group (U.S. Pat. No. 4,525,556). The catalyst system used in this process, however, further requires, as other essential catalyst components, MgR.sub.2 and an inorganic or organic halogen compound and furthermore requires, as an organoaluminum compound, AlR.sub.n X.sub.n' (wherein R is a hydrocarbon group, X is halogen, n and n' are each a value of 0 to 3 and n+n'=3).

Catalyst for olefin polymerization and process for producing olefin polymer using the catalyst


A translation server system of the present invention provides a function of translating a document without feeling any stress irrespective of a performance of a user's own terminal device. A relay device for relaying request data from a terminal device to a server device and response data from the server device to the terminal device in response to the request data, includes a control unit for performing communications with a translation server for translating text information contained in the response data. The translation server translates the text information contained in the response data received from the server device, and a result of this translation is transmitted as response data to the terminal device.

The present invention relates to a translation server system.
With a spread of the Internet technology typified by World Wide Web (hereinafter abbreviated to WWW) and E-mails over the recent years, a variety of information can be obtained without being aware of the borders. Further, there has been proposed a technology of reducing barriers of languages when exchanging the information by combining the Internet with an auto translation program.
What is proposed in, e.g., Japanese Patent Application Laying-Open Publication No. 9-81549 is a system for readily translating the information obtained in a foreign language owing to a combination of the auto translation program with a client system for accessing WWW.
Further, Japanese Patent Application Laying-Open Publication No. 10-149359 proposes a system for combining mail services with an auto translation system, and setting a language into which the E-mail is translated corresponding to addresses of a mail sender and receiver. According to this system, when receiving the E-mail, the mail text is automatically translated based on the address of the sender.
In the system as disclosed in Japanese Patent Application Laying-Open Publication No. 9-81549, however, the information obtained from WWW is translated in the client terminal. This process has a high load upon the CPU and requires some length of time for the translation. Hence, it is required in this system that the client terminal be provided with a high-performance computer. As a lot of client terminals are needed, it is difficult to actually introduce this type of system.
Moreover, a handheld terminal as a client terminal is now spreading. It is not, however, realistic to utilize the auto translation system in the handheld terminal exhibiting a low throughput.
In addition, if translated by the client terminal, when a plurality of persons access the same information, each person needs to execute the translation, with the result that repetitive futile processes are executed in the system as a whole.
On the other hand, the system disclosed in Japanese Patent Application Laying-Open Publication No. 10-149359 aims at automatically translating the mail text on the basis of the addresses of the mail sender and receiver. Nowadays, however, a domain name, which may be defined as a mail address, is not necessarily classified according to the country. Hence, it is difficult to operate this system without any contradiction in the Internet environment of nowadays, wherein the number of communication terminals more and more increases.

Relay device, server device, terminal device, and translation server system utilizing these devices


A semiconductor device comprising single crystal films consisting of at least one III-V nitride selected from the group consisting of gallium nitride, aluminum nitride, boron nitride, indium nitride, and single-crystalline alloys of these nitrides, the single crystal films being provided on a single crystal substrate of aluminum nitride either directly or through a low-temperature growth buffer layer of at least one III-V nitride. This semiconductor device is useful as a short-wavelength light emitting device capable of conducting continuous oscillation or a diode which is operated at a high temperature. The AlN single crystal substrate is matched in lattice constant and coefficient of thermal expansion with the single crystal film of a III-V nitride and the single crystal films is grown with good crystallinity on the substrate.

1. Field of the Invention
The present invention relates to semiconductor devices using a III-group element nitride (hereinafter, III-V nitride)for use in, for example, a reader of a high-density optical disk, including short-wavelength light emitting devices, such as a light emitting diode or a laser diode, light-receiving devices such as a photodiode, high-temperature semiconductor devices which can operate even in a high-temperature environment, and high-speed operation semiconductor devices.
2. Description of the Prior Art
A III-V nitride having a wurtzite structure is a direct transition type semiconductor having a wide forbidden band and, hence, has attracted attention as a material for a short-wavelength light emitting device or a light-receiving device and, further, a high-temperature semiconductor device and a high-speed semiconductor device. The III-V nitrides having the above wurtzite structure include gallium nitride (GaN), aluminum nitride (AlN), boron nitride (BN), indium nitride (InN), and single-crystalline alloys of these nitrides. The forbidden band width can be varied by varying the type of the material and the composition of the single-crystalline alloy.
In particular, gallium nitride and single-crystalline alloys thereof have been actively studied as the material of light emitting devices. In recent years, blue and bluish green LEDs (light emitting diodes) using a gallium nitride compound semiconductor have been put to practical use, and, in the next stage, practical use of short-wavelength LDs (laser diodes) in a reader for a high-density optical disk is expected in the art.
In the formation of semiconductor devices such as LEDs and LDs, a single crystal film of a semiconductor should be grown on a substrate of a single crystal of the same crystal structure. In the III-V nitrides, however, a single crystal having a size large enough to be used as the substrate could have not been synthesized, and, hence, hetero-epitaxial growth wherein a single crystal film of a III-V nitride is grown on a dissimilar substrate has been used in the art. Substrates known to be usable for the hetero-epitaxial growth include the (0001) plane (plane C) and the (11-20) plane (plane A) of a single crystal of sapphire, the (111) plane of a single crystal of silicon, the (0001) plane of a single crystal of 6H-SiC, and the (111) plane of a single crystal of MgAl.sub.2 O.sub.4.
The single crystal substrate of sapphire among these substrates permits the growth of a single crystal film of a gallium nitride compound semiconductor having good crystallinity through a low-temperature growth buffer layer and, in addition, is relatively inexpensive. Therefore, it is most commonly used in blue and bluish green LEDs utilizing the above gallium nitride compound semiconductor.
Particularly regarding LDs, however, those in an infrared region using a GaAs compound semiconductor or an InP compound semiconductor have been put to practical use, but blue-emitting LDs using a III-V nitride are still under study and there are some reports thereon. Examples of such reports include Jpn. J. Appl. Phys., Vol. 35 (1996), pp. L74-L76, Jpn. J. Appl. Phys., Vol. 35 (1996), pp. L217-L220, and Appl. Phys. Lett., Vol. 68, No. 15 (1996), pp. 2105-2107. All the LDs cited in these reports are of a pulse oscillation type.
Appl. Phys. Lett., Vol. 69, No. 26 (1996), pp. 4056-4058 reports a continuous oscillation type LD. This LD has a short service life due to a temperature rise during continuous oscillation. This is because, since the single crystal substrate is not constituted of a III-V nitride, the differences in the lattice constant and in the coefficient of thermal expansion between the substrate and the overlying single crystal film of a III-V nitride are so large that it is difficult to synthesize a single crystal film of a III-V nitride having good crystallinity, which results in inclusion of many defects such as dislocation in the single crystal film.
Thus, high-temperature semiconductor devices and high-speed semiconductor devices using III-V nitrides have not been yet put to practical use, although application of III-V nitrides as a light emitting device has been partly realized. This also is because many defects such as dislocation are included in the single crystal film of a III-V nitride. The dislocation is propagated under high temperature conditions, leading to remarkably deteriorated performance, which results in a shortened service life. Further, the dislocation lowers the mobility of the carrier unfavorably, making it impossible to realize high-speed operation.
For this reason, improving the film quality by interposing a low-temperature buffer layer has been attempted. At the present time, however, the improvement is unsatisfactory. In addition, the cleavage of the single crystal substrate used is difficult, posing problems that the flatness of the mirror facet for a laser cavity cannot be ensured in the formation of LD and, in addition, the step of forming the mirror facet for a laser cavity is complicate.
In order to solve the above problems, an attempt to utilize a single crystal of gallium nitride as a III-V nitride for a single crystal substrate has been reported in Jpn. J. Appl. Phys., Vol. 35 (1996), pp. L77-L79. The size of the single crystal of gallium nitride which can be currently synthesized is small and up to about 2 mm square, making it difficult to put the single crystal to practical use in semiconductor devices such as LDs which can be continuously oscillated.
Further, heat dissipation should be improved because light emitting devices, particularly LDs, have a high calorific value at the time of light emission, high-speed semiconductor devices have a high calorific value at the time of high-speed operation, and, further, high-temperature semiconductor devices also need the prevention of deterioration thereof. For these reasons, the use of substrates having high heat conductivity is desired. In this connection, however, it should be noted that all of substrates made of sapphire, silicon, MgAl.sub.2 O.sub.4, and the like, which permit the crystal growth of a necessary single crystal film, have low heat conductivity. Therefore, in devices where high output and temperature stability are required, these substrates are used in the form bonded to a heat sink material. Jpn. J. Appl. Phys., Vol. 34 (1995), pp. L1517-1519 proposes a device comprising a single crystal substrate of sapphire and a GaN layer provided on the substrate through an AlN film. In this device, however, the above problem of heat dissipation remains unsolved because the single crystal of sapphire is used as the substrate.
An example of the growth of a semiconductor material on a substrate having high heat conductivity is described in Japanese Patent Laid-Open No. 42813/1989 wherein a single crystal film of a semiconductor is provided on a single crystal substrate of diamond. The substrate in this example is a thin-film single crystal substrate comprising a single crystal substrate of diamond bearing at least one single crystal layer formed of at least one material selected from among gallium nitride, indium nitride, aluminum nitride and the like. This example is aimed at providing a substrate having high heat conductivity, low coefficient of thermal expansion, and excellent heat resistance and environmental resistance. This single crystal substrate of diamond also is unsatisfactory in matching in lattice constant and coefficient of thermal expansion with the single crystal of a III-V nitride.
As described above, substrate materials, such as sapphire, silicon, SiC, and MgAl.sub.2 O.sub.4, which have hitherto been used for the growth of a single crystal film of a III-V nitride are unsatisfactory in matching in lattice constant and coefficient of thermal expansion with the III-V nitride. This makes it difficult to synthesize a single crystal film of a III-V nitride having good crystallinity on these substrates, and, at the present time, the interposition of a low-temperature growth buffer layer between the single crystal film and the substrate is necessary and indispensable.
For all the conventional single crystal substrates except for SiC, the cleavage for the formation of a mirror facet for a laser cavity in LDs was impossible. Although an attempt has been made to form a mirror facet by etching, this method cannot provide a satisfactorily even laser cavity and, at the same time, is disadvantageous in that the step of forming a mirror facet is complicate. On the other hand, the use of SiC as the substrate results in poor light emitting properties. Although the reason for the poor light emitting properties has not been elucidated yet, it is believed to reside in the stress derived from the difference in the coefficient of thermal expansion or diffusion of the SiC component in the GaN film. For the sapphire substrate which has been most commonly used in the art, the heat conductivity is so low that, for use in light emitting devices, the substrate should be bonded to a heat sink. Further, in this case, since sapphire is not electrically conductive, it is difficult to handle an electrode in the bonding to the heat sink.
As described in Jpn. J. Appl. Phys., Vol. 35 (1996), pp. L77-L79, the use of a single crystal substrate of gallium nitride enables the synthesis of a high-quality film of a III-V nitride. At the present time, the formation of a large single crystal of gallium nitride to be used as the substrate is difficult, and, in addition, the thermal conductivity is poor, offering poor heat dissipation. In the technique disclosed in the Japanese Patent Laid-Open No. 42813/1989, a single crystal substrate of diamond having high thermal conductivity is used for heat dissipation purposes. This method is, however, disadvantageous in that this substrate is unsatisfactory in matching in lattice constant and coefficient of thermal expansion with the single crystal of a III-V nitride.

Group III-V nitride semiconductor device


Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner.

Semiconductor image sensors are used to sense radiation such as light. Complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) and charge-coupled device (CCD) sensors are widely used in various applications such as digital still camera or mobile phone camera applications. These devices utilize an array of pixels in a substrate, including photodiodes and transistors, that can absorb radiation projected toward the substrate and convert the sensed radiation into electrical signals.
In recent years, the semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced generations of ICs where each generation has smaller and more complex circuits than the previous generation. As a part of the IC evolution for semiconductor image sensors, the size of the radiation-sensitive pixels has been steadily reduced. As the pixels and the separation between adjacent pixels continue to shrink, issues such as excessive dark current and cross-talk become more difficult to control. Conventional methods of addressing the dark current and cross-talk issues have been expensive and require complex implementation. Even then, the image sensors fabricated using conventional methods may still have poor dark current and cross-talk performance.
Therefore, while existing semiconductor image sensors have been generally adequate for their intended purposes, they have not been entirely satisfactory in every aspect.

Image sensor trench isolation with conformal doping

Taiwan Semiconductor Manufacturing Company, Ltd.


Patient specific shoulder component implant instruments are described for hemi and total, normal and reverse shoulder arthroplasty.

Shoulder hemiarthroplasty is commonly used to treat patients with glenohumeral joint arthrosis. Total shoulder arthroplasty may be indicated for patients without a good articular surface on the glenoid at the time of surgery. For patients with glenohumeral joint arthrosis and an additional deficient rotator cuff, reverse total shoulder arthroplasty may be indicated. The 12%, 15%, and 22% revision rates, respectively, remains high compared to hip and knee arthroplasty. Glenoid component loosening and instability are important complications and may be caused by poor positioning of the component. An accurate placement of the complementary humeral cut is also important to achieve a stable joint.
There is a continuing need to improve the instruments used to facilitate the implantation of total shoulder joint components.

NEW YORK SOCIETY FOR THE RELIEF OF THE RUPTURED AND CRIPPLED, MAINTAINING THE HOSPITAL FOR SPECIAL SURGERY


A model and method are provided for lowering device jitter by controlling the stackup of PCB planes so as to minimize inductance between a FPGA and PCB voltage planes for critical core voltages within the FPGA. Furthermore, a model and method are provided for lowering jitter by controlling the stackup of package substrate planes so as to minimize inductance between a die and substrate voltage planes for critical core voltages within the die.

1. Technical Field
The present invention relates to printed circuit boards (PCBs) and package substrates, and more particularly to the reduction of jitter in a semiconductor device by controlling stackup.
2. Related Art
Programmable logic devices (PLDs) are a well-known type of integrated circuit (IC) that may be programmed by a user to perform specified logic functions. One type of PLD, the field programmable gate array (FPGA), typically includes an array of programmable tiles. These programmable tiles can include, for example, programmable input/output blocks (IOBs), configurable logic blocks (CLBs), dedicated random access memory blocks (BRAMs), multipliers, digital signal processing blocks (DSPs), processors, clock managers, delay lock loops (DLLs), and so forth. Notably, as used herein, "include" and "including" mean including without limitation.
One such FPGA is the Xilinx Virtex® FPGA available from Xilinx, Inc. of San Jose, Calif. 95124. A FPGA typically includes an array of CLBs surrounded by a ring of IOBs. The CLBs and IOBs are interconnected by a programmable interconnect structure. The CLBs, IOBs, and interconnect structure are typically programmed by loading a stream of configuration data into internal configuration memory cells that define how the CLBs, IOBs, and interconnect structure are configured. The configuration data may be read from an external memory, conventionally an external integrated circuit memory EEPROM, EPROM, PROM, or the like, though a computer may also be used to provide the data. The collective states of the individual memory cells then determine the function of the FPGA. FPGAs may include one or more embedded microprocessors. For example, a microprocessor may be located in an area reserved for it, generally referred to as a "processor block." The FPGA is attached to a printed circuit board (PCB) of a computer or other similar device.
Another type of PLD is the complex programmable logic device (CPLD). A CPLD includes two or more "function blocks" connected together and to input/output (I/O) resources by an interconnect switch matrix. Each function block of the CPLD includes a two-level AND/OR structure. For purposes of clarity, FPGAs are described below though other types of PLDs and semiconductor devices may be used.
FIG. 1 shows an example printed circuit board (PCB) 100 having mounted thereon an example FPGA chip 105. A plurality of contact members, for example metal pad regions or pogo pins (not shown), extend from the upper surface of PCB 100. The FPGA chip 105 has mounted thereon a plurality of solder balls 110 for electrically connecting to the contact members of the PCB 100. The FPGA chip 105 also includes die 115 electrically connected to a carrier via bumps 120. PCB 100 includes layers for power supply voltage rails, ground and signal lines (not shown). Vias connect these layers through solder balls 110 to and through the circuitry of the FPGA 105.
PCBs can contribute to jitter in FPGAs resulting from connections to the PCB layers while the PCB voltage supply drives circuitry of the FPGA. One factor contributing to jitter is local voltage supply noise in the PCB. Parasitic inductive, capacitive, and resistive loads along the lines supplying power and signals to elements in the FPGA can cause voltage fluctuations, including ground bounce and supply bounce, which increases local power supply noise in the PCB. This noise provided to delay elements creates jitter in the FPGA on a clock signal containing the delay elements.
FIG. 2 shows a current example stackup for a twenty-four-layer PCB. This PCB 100 has three power supply planes 11, 13 and 14 and ten signal planes 1, 3, 5, 7, 9, 16, 18, 20, 22 and 24. This implementation places all the power supply planes 11, 13, and 14 in the middle of the board, without any particular rules assigned as to what order each power supply plane appears within the stackup. For example, the power supply planes can be differentiated due to their different voltages. As another example, some "core" power supply planes power timing-critical circuitry within the FPGA, whereas other power supply planes power input/output circuitry within the FPGA. Further, this stackup has two power supply planes 13 and 14 that are adjacent to each other, which allows noise from one plane to couple onto the other.
FIG. 3 shows a current example stackup for an eight-layer package substrate 300. The package substrate 300 is a PCB-like structure used to mount a silicon die. A die 315 is electrically connected to the package substrate 300 through conductive balls 320. Of note, the primary core supply, shown as "Vcc—Primary Core Supply Plane" on plane 6, and secondary core supply, shown as "Vcc—Secondary Core Supply Plane" on plane 7, are farther away from die 315 than the I/O power supply, shown as "Vcc—I/O Supply Plane on plane 4."
FIG. 4 shows a current example stackup for a ten-layer package substrate 300. Of note, the primary core power supply, shown as "Vcc—Primary Core Supply Plane" on plane 6 is farther away from die 315 than the first I/O power supply, shown as "Vcc—I/O Supply Plane" on plane 4. Similarly, the secondary core power supply, shown as "Vcc—Secondary Core Supply Plane" on plane 10, is farther away from the die 315 than both the first and second I/O power supply planes, shown as "Vcc—I/O Supply Plane" on planes 4 and 8.
It is desirable to reduce the amount of jitter on a clock as it propagates through a PCB to and through a silicon device, such as a FPGA.

Reduction of jitter in a semiconductor device by controlling printed circuit board and package substrate stackup


A positive off mechanism for a circuit breaker includes a pair of positive off levers slideable in slots in the side plates and extendable into the path of the operating handle to prevent movement of the handle to the off position when the contacts are welded closed. The positive off levers are actuated by positive off links pivotally mounted to the side plates and coupled to the positive off levers by "dog bone" connections. The positive off links in turn are actuated by the toggle mechanism of the circuit breaker which collapses to open the contacts during normal circuit breaker operation, but which remains erect when the contacts are welded closed.

1. Field of the Invention
This invention is directed to circuit breakers and in particular to circuit breakers having mechanisms which prevent movement of the circuit breaker operating handle to the off position if the contacts are welded closed.
2. Background Information
A common type of circuit breaker has a fixed electrical contact, and a movable electrical contact mounted on a movable contact arm. The contacts are closed and opened by rotating a handle between an on and off position, respectively. A latchable cradle connected to the movable contact arm by a spring operated toggle device is held in a latched position by a trip device. In response to predetermined overload conditions in the circuit breaker, the trip mechanism unlatches the latchable cradle and the spring operated toggle device rotates the movable contact arm to open the contacts. When the circuit breaker is tripped in this manner, the spring operated toggle device also moves the handle to a trip position intermediate the on and off positions. Thus, the handle provides a visual indication of the state of the circuit breaker. The circuit breaker is reset by moving the handle slightly past the off position to relatch the latchable cradle, and then to the on position to reclose the contacts.
It is possible under some overload conditions for the contacts of a circuit breaker to become welded closed. Under these circumstances, the trip device of the circuit breaker described above can respond to the overload condition by unlatching the latchable cradle. However, if the weld is of sufficient strength, the contact arm cannot be rotated and the contacts remain closed. Still, it may be possible to rotate the handle to the off position. Furthermore, in some installations, the circuit breaker is operated by a motor operator or a mechanical linkage which can force the operating handle to the off position even though the contacts are welded closed. Obviously, this is a very unsatisfactory situation.
Various remedies for the above condition have been proposed. Some of these solutions are not satisfactory because the operating mechanisms have a considerable number of moving parts, so that despite interlocks designed to prevent movement of the handle to the off position when the contacts are welded, the mechanism can be distorted or parts can even be bent to force the handle to the off position. In fact, some codes require that the device be able to withstand forces up to three times the normal operating force.
There is a need therefore for an improved positive off mechanism for a circuit breaker which is rigid enough to block movement of the operating handle to the off position despite the application of a force to the operating handle which is in excess of the normal operating force required to operate the circuit breaker.

Circuit breaker with positive off protection


Providing a spectrometric measuring instrument suitable for in-line measurement for example in a semiconductor manufacturing process, an FPD manufacturing process, or the like, by realizing size reduction and imparting resistance to distance fluttering, angle fluttering in a horizontal direction, and angle fluttering in a perpendicular direction. A light interference type spectral element for gradually changing a wavelength of transmitted light by means of a transmitted position is provided immediately before the photoelectric transfer part array device, and based upon a light-receiving side optical system having the function of detecting a change in state of polarization of a reflected light from a sample, and a series of light-receiving amount data obtained from each of photoelectric transfer parts of the photoelectric transfer part array device, polarized light is analyzed. By fitting of a measured waveform to a theoretical waveform, a film thickness or film quality is obtained.

1. Field of the Invention
The present invention relates to a spectrometric measuring instrument using suitable changes in state of polarization of light for application of measurement of a thickness or quality (optical constant, sample structure, etc.) of a thin film, and the like, and particularly relates to a spectrometric measuring instrument suitable for in-line measurement performed in a production line.
2. Description of Related Art
In semiconductor manufacturing processes, recent upsizing, as well as miniaturization of design rules, of semiconductors substrates has raised the possibility of occurrence of excessive damage due to defect possible and necessitated control of delicate abnormality, and thereby testing is increasingly important.
Also in processes for manufacturing FPDs (flat panel displays) typified by an LCD (liquid crystal display) and a PDP (plasma display panel), screen sizes, fineness, and appearance quality are rapidly on the increase with increase in size of glass substrates. Therefore, in order to produce products of high quality in high yield, the importance of testing becomes increasingly high.
Tests of products in the manufacturing process of this kind, especially a film-thickness test, have hitherto been conducted in off-line measurement using a large and expensive spectrometric measuring instrument. This off-line measurement is performed through the following series of procedures. Products are sampled from a manufacturing process, carried to a spectrometric measuring instrument apart from the line, and then subjected to measurement and checking.
In such an off-line measurement, there has been a problem as follows. In the case where a measured result deviates from a control standard, it requires time to feedback that information to be reflected to the process so as to make a correction. Further, as for products not sampled in the manufacturing line, it is not possible to determine whether of not each of the products deviates from the control standard, thereby causing the yield to be lowered.
Therefore, the needs are growing for, for example, incorporating a spectrometric measuring instrument into a film formation process (in-situ) or immediately after the film formation process in a manufacturing line for products, to realize in-line film thickness measurement, in which a total measurement is performed without sampling products from the manufacturing process, so as to improve the product yield.
As a spectrometric measuring instrument applicable to such in-line measurement, it is required to satisfy the following conditions: (1) having an equivalent function to a function of a spectrometric measuring instrument to be used in a conventional film-thickness measurement; (2) being small-sized and capable of high-speed arithmetic processing; and (3) having resistance to later-described distance fluttering and angle fluttering. Additionally, as design rules have recently become finer, an insulating film and the like have become extremely thinner, and thereby testing of a thickness and quality of an ultra-thin film of several nanometers is increasingly important.
In a conventional film-thickness measurement, a thickness-meter of a spectroscopic analysis system or a polarimetry system is mainly used. However, the thickness-meters of those systems are both comprised of a spectroscope using a diffraction grating, and thus have a drawback of causing the instrument to be large-sized and thus be not suitable for the in-line measurement.
Moreover, since only a reflectance as an average value of an S polarized light and a P polarized light is measurable in the thickness-meter of the spectroscopic analysis system, an amount of information is small as compared to the thickness-meter of the polarimetry system typified by an ellipsometer for gathering up the reflectances of the S polarized light and a P polarized light to calculate a film thickness. It is therefore not possible for the thickness-meter of the spectroscopic analysis system to perform accurate measurement.
Further, in the thickness-meter of the spectroscopic analysis system, a reflectance is calculated by obtaining a ratio between an intensity distribution waveform of a wave incident on the sample and an intensity distribution waveform of a wave reflected from the sample. It is therefore necessary to perform another operation for measuring an intensity distribution waveform of an incident wave at the time of film thickness measurement. Consequently, the thickness-meter of the spectroscopic analysis system has a drawback of increasing the measurement time, which is disadvantageous for the in-line measurement.
On the other hand, in the thickness-meter of the polarimetry system, the intensity distribution waveform of the S polarized light and the intensity distribution waveform of the P polarized light are simultaneously measured, and a film thickness is measured based upon this measurement, thereby not requiring another operation for measuring an intensity distribution waveform of an incident wave. Therefore, the thickness-meter of the polarimetry system requires just a short measurement time and can thus be said to be suitable for the in-line measurement.
Further, analyzing film quality (optical constant, sample structure, etc.) of a material requires a spectrum measured in a wide wavelength region. In terms of measuring the film quality, the thickness-meter of the spectroscopic polarimetry system is advantageously used. It is to be noted that "film thickness" mentioned here means a variety of characteristics such as a refractive index, an absorption coefficient, a band structure, and a crystal structure.
FIG. 42 shows a conventional example of a single incident angle spectroscopic ellipsometer for rotating an analyzer as the thickness-meter of the polarimetry system (cf. Japanese Patent Laid-Open No. Hei 6-288835). In this figure, symbol a denotes a light source part, symbol b denotes a polarizer, symbol c denotes a quarter wavelength plate, symbol d denotes a measurement sample, symbol e denotes a rotating analyzer, symbol f denotes an analyzer driving part, symbol g denotes an electronic calculator, symbols h1 to h5 denote optical detectors, and symbol i denotes a diffraction grating.
For convenience of explanation, FIG. 43 shows an example in which the optical detectors h1 to h5 in the single incident angle spectroscopic ellipsometer shown in FIG. 42 have been replaced by a photo-array type detector. In this figure, numeral 101 denotes multi-colored light source, numeral 102 denotes a polarizer, a numeral 103 denotes a retarder, numeral 104 denotes a sample, numeral 105 denotes an analyzer, numeral 106 denotes a condenser lens, numeral 107 denotes a diffraction grating, and numeral 108 denotes a one-dimensional CCD.
As apparent from FIG. 43, light emitted from the multi-colored light source 101 passes through the retarder 102 and the analyzer 103 to be brought into a state of straight-line polarization, which is incident obliquely on the surface of the sample 104. On the optical path of the reflected light from the sample 104, the analyzer 105 for checking the state of polarization, the condenser lens 106, the diffraction grating 107 having a spectral function, and the photo-array detector 108 are arranged in this order. Thereby, the state of polarization of the reflected light with respect to each wavelength is measured to acquire a corresponding spectrum. Finally, an arithmetic part (not shown) performs fitting of a theoretical waveform to a measured waveform, to calculate a film thickness of the sample.
As for the foregoing single incident angle spectroscopic ellipsometer, since it is comprised of a spectrometer using a diffraction grating, the instrument becomes large-sized (first problem), and thus becomes difficult to incorporate the instrument in a line for the in-line measurement.
In the case where later-described distance fluttering occurs, an intensity distribution waveform of reflected light observed does not change. However, in the case where later-described angle fluttering in a horizontal direction or angle fluttering in a perpendicular direction occurs, an intensity distribution waveform of reflected light observed widely varies (second problem), to make measurement difficult. That is, since the single incident angle spectroscopic ellipsometer is susceptible to the distance fluttering as well as the angle fluttering, it is impossible to perform the in-line measurement in terms of actual application of the ellipsometer. For resolving such a situation, a stage needs arranging exclusively for fixing a sample required to be measured, which significantly restricts conditions for setting the instrument.
Further, since it is necessary to position a distance to the sample and inclination of the sample prior to measurement (third problem), it takes time to adjust the stage. This results in an increase in measurement time, and thereby the single incident angle spectroscopic ellipsometer is considered as not appropriate for the in-line measurement.
[Explanation of Distance Fluttering]
"Distance fluttering" is described while referring to FIGS. 44 to 46. In FIGS. 44 to 46, numeral 201 denotes a multi-colored light source, numeral 202 denotes a polarizer, numeral 203 denotes a retarder, numeral 204 denotes a sample such as a semiconductor product or an FDP, numeral 205 denotes an analyzer, numeral 206 denotes a condenser lens having a convergence point on a light-receiving face of a one-dimensional CCD, numeral 207 denotes a diffraction grating, numeral 208 denotes a one-dimensional CCD, and those figures show simplified examples of the invention described in Japanese Patent Laid-Open No. Hei-288835.
It is to be noted that FIG. 44 shows a view of the case where the sample is arranged at a reference height, FIG. 45 shows a view of the case where the sample is arranged at a lowered height, and FIG. 46 shows a view of the case where the sample is arranged at a raised height.
The distance fluttering is a phenomenon that a distance between an optical system (e.g. the retarder 203) and the sample 204 varies. If this distance fluttering occurs, the position of a reflected light intensity distribution waveform observed through the one-dimensional CCD 208 varies although the width thereof in the direction of the array line does not vary. Accordingly, an optical constant of the thin film calculated based upon the intensity distribution waveform is inaccurate.
As apparent from the comparison between FIGS. 44 and 45, since the position of incidence of the reflected light L101 from the sample 204 arranged at the reference height on the diffraction grating 207 differs from that of the reflected light L102 from the sample 204 arranged at the lowered height, while the reflected lights L101 and L102 are in parallel, the reflected light intensity distribution waveform W101 when the sample 204 is arranged at the reference height does not agree with the reflected light intensity distribution waveform W102 when the sample 204 is arranged at the lowered height.
Similarly, as apparent from the comparison between FIGS. 44 and 46, since the position of incidence of the reflected light L101 from the sample 204 arranged at the reference height on the diffraction grating 207 differs from that of the reflected light L103 from the sample 204 arranged at the raised height, while the reflected lights L101 and L103 are in parallel, the reflected light intensity distribution waveform W101 when the sample 204 is arranged at the reference height does not agree with the reflected light intensity distribution waveform W103 when the sample 204 is arranged at the raised height.
[Explanation of Angle Fluttering in Horizontal Direction]
"Angle fluttering in a horizontal direction" is described while referring to FIGS. 47 to 49. In FIGS. 47 to 49, the same components as shown in FIGS. 44 to 46 are provided with the same numerals as in FIGS. 44 to 46, and explanations of those components are omitted.
It is to be noted that FIG. 47 shows a positional relation between the optical system and the sample when the sample is arranged at a reference angle (flat face perpendicular to the incident face), FIG. 48 shows the positional relation when the sample is in the state of slanting to the right (leaning to the right), and FIG. 49 shows the positional relation when the sample is in the state of slanting to the left (leaning to the left).
The angle fluttering in the horizontal direction is a phenomenon that the inclination of the sample 204 varies in a direction rotating around a straight line as a central axis, the line being perpendicular to the incident face. If this angle fluttering in the horizontal direction occurs, the width of a reflected light intensity distribution waveform in the direction of the array line observed through the one-dimensional CCD 208 varies, and thereby, an optical constant of the thin film calculated based upon the intensity distribution waveform is inaccurate.
As apparent from the comparison between FIGS. 47 and 48, the reflected light L201 from the sample 204 when arranged at the reference angle and the reflected light L202 from the sample 204 when arranged at the angle leaning to the right are not in parallel, and the respective angles and positions at which the reflected lights L201 and L202 are incident on the diffraction grating 207 differ. Therefore, the reflected light intensity distribution waveform W201 when the sample 204 is arranged at the reference angle does not agree with the reflected light intensity distribution waveform W202 when the sample 204 is arranged at the angle leaning to the right.
Similarly, as apparent from the comparison between FIGS. 47 and 49, the reflected light L201 from the sample 204 when arranged at the reference angle and the reflected light L203 from the sample 204 when arranged at the angle leaning to the left are not in parallel, and the respective angles and positions at which the reflected lights L201 and L203 are incident on the diffraction grating 207 differ. Therefore, the reflected light intensity distribution waveform W201 when the sample 204 is arranged at the reference angle does not agree with the reflected light intensity distribution waveform W203 when the sample 204 is arranged at the angle leaning to the left.
[Explanation of Angle Fluttering in Perpendicular Direction]
"Angle fluttering in a perpendicular direction" is described while referring to FIGS. 50 to 52. In FIGS. 50 to 52, the same components as shown in FIGS. 44 to 46 are provided with the same numerals as in FIGS. 44 to 46, and explanations of those components are omitted.
It is to be noted that FIG. 50 shows a positional relation between the optical system and the sample when the sample is arranged at a reference angle (flat face perpendicular to the incident face), FIG. 51 shows the positional relation when the sample is in the state of slanting backward (leaning backward), and FIG. 52 shows the positional relation when the sample is in the state of slanting backward (leaning backward).
The angle fluttering in the perpendicular direction is a phenomenon that inclination of a sample varies in a direction rotating around a straight line as a central axis, the line being an intersection between an incident face and a face to be measured. If this angle fluttering in the perpendicular direction occurs, the stretching direction of the light diffracted on the diffraction grating 207 is displaced from the array line direction of the one-dimensional CCD 208, whereby the reflected light intensity distribution cannot be completely received on the one-dimensional CCD 208. As a result, an optical constant of the thin film calculated based upon the intensity distribution waveform is inaccurate.
As apparent from the comparison between FIGS. 50 and 51, the reflected light L301 from the sample 204 when arranged at the reference angle and the reflected light L302 from the sample 204 when arranged at the angle leaning backward are not in parallel, and the respective angles and positions at which the reflected lights L301 and L302 are incident on the diffraction grating 207 differ. Therefore, the reflected light intensity distribution waveform W301 when the sample 204 is arranged at the reference angle does not agree with the reflected light intensity distribution waveform W302 when the sample 204 is arranged at the angle leaning backward.
Similarly, as apparent from the comparison between FIGS. 50 and 52, the reflected light L301 from the sample 204 when arranged at the reference angle and the reflected light L303 from the sample 204 when arranged at the angle leaning backward are not in parallel, and the respective angles and positions at which the reflected lights L301 and L303 are incident on the diffraction grating 207 differ. Therefore, the reflected light intensity distribution waveform W301 when the sample 204 is arranged at the reference angle does not agree with the reflected light intensity distribution waveform W303 when the sample 204 is arranged at the angle leaning backward.
It is to be noted that, hereinafter, the angle fluttering in the horizontal direction and the angle fluttering in the perpendicular direction are collectively referred to as the angle fluttering.


A simple technique to solder submicron sized, ohmic contacts to nanostructures has been disclosed. The technique has several advantages over standard electron beam lithography methods, which are complex, costly, and can contaminate samples. To demonstrate the soldering technique graphene, a single atomic layer of carbon, has been contacted, and low- and high-field electronic transport properties have been measured.

This invention relates generally to joining of small structures, and, more specifically, to making electrical contacts to nanostructures.
The conventional method used to contact nanostructures electrically is electron beam lithography. While having good resolution, the procedure is complex, expensive, and time-consuming. Moreover, the polymer resists and solvents used in the process leave residues that often contaminate the sample or device. As a result, the major contribution to the device resistance is not from the sample itself, but from the contact. While lithography-free contacting techniques have been developed, such as with the use of shadow masks, they have their drawbacks. It would be useful to have a method to contact nanostructures electrically that is simple, robust, inexpensive, suitable for large-scale manufacturing, and that does not introduce contamination.

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