The present invention provides a liquid crystal display device used as a display part of an electronic apparatus which exhibits high brightness and favorable display quality. The liquid crystal display device includes a pair of substrates which are arranged to face each other in an opposed manner; vertical-alignment type liquid crystal which is sealed between the pair of substrates; a plurality of pixel regions, each pixel region including a sub pixel having a pixel electrode on one substrate and a sub pixel having a pixel electrode on one substrate, a slit formed between the pixel electrodes; and a singular point control part which includes projecting portions which are formed on end portions of the pixel electrodes on the slit-side and controls singular points of the liquid crystal.

1. Field of the Invention
The present invention relates to a liquid crystal display device used in a display part of an electronic apparatus or the like.
2. Description of the Related Art
FIG. 13 shows the schematic cross-sectional constitution of a conventional liquid crystal display device. As shown in FIG. 13, the liquid crystal display device includes a TFT substrate 102 on which a thin film transistor (TFT) and a pixel electrode are formed for every pixel, and a counter substrate 104 on which color filters (CF) and a common electrode are formed. Both substrates 102, 104 are laminated to each other through a sealing material 152 which is applied to outer peripheral portions of both substrates 102, 104. A mounting terminal 160 which serves to mount a driver IC is formed on the TFT substrate 102. Liquid crystal 106 is sealed between both substrates 102, 104. A cell gap defined between both substrates 102, 104 is held by spherical spacers 146, for example. Further, polarizers 187, 186 are arranged on the outsides which sandwich both substrates 102, 104 therebetween.
FIG. 14 shows the constitution of one pixel of a conventional MVA (Multi-domain Vertical Alignment) type liquid crystal display device. As shown in FIG. 14, the liquid crystal display device includes a plurality of gate bus lines 112 which are formed on the TFT substrate 102, and a plurality of drain bus lines 114 which intersect the gate bus lines 112 through an insulation film. TFTs 120 are formed in the vicinity of positions where the gate bus lines 112 and the drain bus lines 114 intersect each other. In a pixel region which is defined by the gate bus lines 112 and the drain bus lines 114, a pixel electrode 116 is formed. A storage capacitor bus line 118 which extends parallel to the gate bus line 112 is formed in a state that the storage capacitor bus line 118 transverses the pixel region. A storage capacitor electrode 119 is formed over the storage capacitor bus line 118 through an insulation film for every pixel. A linear slit (blank on an electrode) 144 which extends obliquely with respect to polarization axes of the polarizers 186, 187 is formed on the pixel electrode 116. On the counter substrate 104 side, linear projections 142 which extend parallel to the slit 144 are formed. The slit 144 and the linear projections 142 function as the alignment regulating structure which regulates the alignment of the liquid crystal 106.
FIG. 15A and FIG. 15B are cross-sectional views for explaining the alignment regulating structure. In FIG. 15A and FIG. 15B, linear projections 143 are formed on the substrate 102, while the linear projections 142 are formed on the substrate 104. As shown in FIG. 15A, the linear projections 143 on the TFT substrate 102 side are formed on an alignment film 150 which is formed on the pixel electrode 116, for example. The linear projections 142 of the counter substrate 104 side are formed on an alignment film 151 which is formed on a common electrode 141, for example. At the time of applying no voltage, liquid crystal molecules 108 are aligned substantially normal to surfaces of the substrates. When a voltage is applied between the pixel electrode 116 and the counter electrode 141, as shown in FIG. 15B, the liquid crystal molecules 108 are tilted. Using the linear projections 142, 143 as boundaries, the direction that the liquid crystal molecules 108 are tilted differs and the liquid crystal molecules 108 in a region between the neighboring linear projections 142, 143 are tilted in the same direction. By arranging the alignment regulating structure as shown in FIG. 14, the liquid crystal molecules 108 are tilted in four directions orthogonal to each other in the inside of one pixel. Due to such an alignment division technique, the deviation of a viewing angle which is a phenomenon generated in the liquid crystal display device in which the liquid crystal molecules 108 are tilted only in one direction can be eliminated thus largely improving the viewing angle characteristics. Here, in the constitution shown in FIG. 15A and FIG. 15B, the linear projections 142, 143 are formed on both substrates 102, 104 as the alignment regulating structure. However, there may be a case that the linear projections are formed on only one of the substrates 102, 104. Further, there may be a case that slits are formed on both substrates 102, 104 in place of the linear projections 142, 143. Still further, there may be case that slits 145 are formed only one of substrates 102, 104 as shown in FIG. 16.
FIG. 17 shows one pixel of a general MVA type liquid crystal display device in which slits 144 are formed in a TFT substrate 102 side and linear projections 142 are formed on the counter substrate 104 side. FIG. 18 shows the cross-sectional constitution of the liquid crystal display device taken along a line X-X in FIG. 17, while FIG. 19 shows the cross-sectional constitution of a TFT substrate 102 taken along a line Y-Y in FIG. 17. As shown in FIG. 17 to FIG. 19, a pixel electrode 116 is divided into several regions by slits 144, and the respective regions of the pixel electrode 116 in the inside of the pixel are electrically connected with each other thus maintaining the respective regions at the same potential. The pixel electrode 116 is connected with a source electrode 122 of a TFT 120 via a contact hole 123 and also is electrically connected with a storage capacitor electrode 119 via a contact hole 126. A drain electrode 121 of the TFT 120 is electrically connected with a drain bus line 114. Due to the formation of the slits 144 and linear projections 142, the pixel region is divided into four alignment regions α to δ which differ from each other in the alignment azimuth of liquid crystal molecules 108.
FIG. 20 schematically shows the alignment azimuths of the liquid crystal molecules 108 in the respective alignment regions α to δ and an area ratio of the respective alignment regions in the inside of one pixel. As shown in FIG. 20, areas of the respective alignment regions α to δ which differ in the alignment azimuth of the liquid crystal molecules 108 from each other are set substantially equal in the inside of one pixel. Accordingly, the viewing angle characteristics of the liquid crystal display device do not posses the large dependency on an azimuth angle of a display screen and hence, a favorable display is obtained from any azimuth.
FIG. 21 shows the constitution of one pixel of a liquid crystal display device in which the arrangement of the slits 144 and the linear projections 142 is exchanged with respect to the constitution shown in FIG. 17 to FIG. 19. FIG. 22 shows the cross-sectional constitution of the liquid crystal display device taken along a line Z-Z in FIG. 21. Also in the liquid crystal display device shown in FIG. 21 to FIG. 22, the areas of the alignment regions α to δ are set substantially equal in the inside of one pixel. Accordingly, in the same manner as the liquid crystal display device shown in FIG. 17 to FIG. 19, it is possible to obtain a favorable display from any azimuth.
FIG. 23 is a graph showing the transmissivity characteristics (T-V characteristics) with respect to an applied voltage of a liquid crystal display device adopting a VA (vertically aligned) mode. The applied voltage (V) to a liquid crystal layer is taken on an axis of abscissas and the transmissivity of light is taken on an axis of ordinates. A line L indicates the T-V characteristics in the direction normal to a display screen (hereinafter referred to as "front direction"), and a line M indicates the T-V characteristics in the direction of an azimuth angle of 90° and a polar angle of 60° with respect to the display screen (hereinafter referred to as "tilted direction"). Here, the azimuth angle is an angle which is measured in the counter clock direction using the right direction of the display screen as the difference. Further, the polar angle is an angle which is made with a perpendicular which is erected on the center of the display screen.
As shown in FIG. 23, in the vicinity of a region surrounded by a circle N, a distortion is generated in the change of the transmissivity (brightness). For example, although the transmissivity in the oblique direction is higher than the transmissivity in the front direction at a relatively low gray scale with the applied voltage of approximately 2.5 V, the transmissivity in the tilted direction is lower than the transmissivity in the front direction at a relatively high gray scale with the applied voltage of approximately 3.8 V. As a result, when viewed from the tilted direction, the brightness difference within an effective drive voltage range becomes small. This phenomenon appears most conspicuously in the color change.
FIG. 24A and FIG. 24B show the change of appearance of an image displayed on a display screen. FIG. 24A shows the image as viewed from the front direction, and FIG. 24B shows the image as viewed from the tilted direction. As shown in FIG. 24A and FIG. 24B, when the display screen is viewed from the tilted direction, the color of the image is changed to a whitish color compared to the viewing from the front direction.
FIG. 25A to FIG. 25C show gray scale histograms of three primary colors of red (R), green (G), blue (B) in a reddish image. FIG. 25A shows the gray scale histogram of R, FIG. 25B shows the gray scale histogram of G, and FIG. 25C shows the gray scale histogram of B. In FIG. 25A to FIG. 25C, the gray scales (256 gray scales from 0 to 255) are taken on an axis of abscissas and an existence ratio (%) is taken on an axis of ordinates. As shown in FIG. 25A to FIG. 25C, in the image, R at the relatively high gray scale and G and B at the relatively low gray scales exist at high existence ratios. When such an image is displayed on a display screen of a liquid crystal display device adopting a VA mode and is observed from the tilted direction, R of high gray scale is changed in a relatively dark mode, while G and B of low gray scales are changed in the relatively bright mode. Accordingly, the brightness difference of three primary colors becomes small and hence, the color of the whole screen becomes whitish as viewed from the tilted direction thus giving rise to a drawback that the color reproducibility is lowered.
To overcome the above-mentioned drawback, there has been proposed a following technique. That is, one pixel is divided into a plurality of sub pixels and pixel electrodes which are separated from each other are provided to the respective sub pixels. The respective pixel electrodes establish the electrically capacitive coupling relationship. For example, the pixel electrode of the sub pixel A is directly connected to a source electrode of a TFT, and the pixel electrode of the sub pixel B is connected to the source electrode via a predetermined control capacitance Cc. When the TFT which is formed for every pixel assumes an ON state, a potential is divided according to the capacitance ratio and hence, voltages which differ from each other are applied to the pixel electrodes of the respective sub pixels. Accordingly, the voltage is applied to the liquid crystal layer for every sub pixel. In this manner, when the plurality of sub pixels which differ in the voltage applied to the liquid crystal layer are present in the inside of one pixel, the distortion of the T-V characteristics shown in FIG. 23 is dispersed into the plurality of sub pixels. Accordingly, it is possible to suppress the phenomenon that the image becomes whitish as viewed from the tilted direction and hence, the viewing angle characteristics are improved. Hereinafter, the above-mentioned technique is referred to as a capacitive coupling HT (halftone-gray scale) method.
FIG. 26 shows the constitution of one pixel of a conventional MVA type liquid crystal display device which uses the capacitive coupling HT method. As shown in FIG. 26, a pixel region includes a sub pixel A and a sub pixel B. In the sub pixel A, a pixel electrode 116 is formed on a TFT substrate 102, while in the sub pixel B, a pixel electrode 117 which is separated from the pixel electrode 116 is formed on the TFT substrate 102. The pixel electrode 116 is electrically connected with a storage capacitor electrode 119 and a source electrode 122 of a TFT 120 via contact hole 124. On the other hand, the pixel electrode 117 assumes an electrically floating state. The source electrode 122 is electrically connected with the storage capacitor electrode 119 via a control capacitance electrode 125. The pixel electrode 117 has a region which is overlapped to the control capacitance electrode 125 through a protective film (insulation film) and is indirectly connected with the source electrode 122 by capacitive coupling via a control capacitance Cc which is formed in the region.
Between the pixel electrodes 116, 117, a slit 144 which extends obliquely with respect to an end portion of the pixel region is formed. The slit 144 separates the pixel electrodes 116, 117 from each other and, at the same time, also functions as the alignment regulating structure which regulates the alignment of liquid crystal 106.
A counter substrate 104 which is arranged to face the TFT substrate 102 in an opposed manner with a liquid crystal layer therebetween includes a common electrode 141 (not shown in FIG. 26). A liquid crystal capacitance Clc1 is formed between the pixel electrode 116 of the sub pixel A and the common electrode 141, while a liquid crystal capacitance Clc2 is formed between the pixel electrode 117 of the sub pixel B and the common electrode 141. On the common electrode 141, a linear projection 142 which extends parallel to the slit 144 and functions as the alignment regulating structure is formed. The control capacitance electrode 125 on the TFT substrate 102 side is arranged to be overlapped to the linear projection 142 as viewed in the direction normal to surfaces of the substrates. Further, on the counter substrate 104, a light shielding film (BM) 145 which shields a pixel region end portion from light is formed.
Assume that the TFT 120 is turned on so that a voltage is applied to the pixel electrode 116 and a voltage Vpx1 is applied to the liquid crystal layer of the sub pixel A. Here, since the potential is divided in accordance with the capacitance ratio between the liquid crystal capacitance Clc2 and a control capacitance Cc, a voltage which is different from a voltage applied to the pixel electrode 116 is applied to the pixel electrode 117 of the sub pixel B. A voltage Vpx2 which is applied to the liquid crystal layer of the sub pixel B is expressed as follows.Vpx2=(Cc/(Clc2+Cc))×Vpx1
Here, since a relationship 0<(Cc/(Clc2+Cc))<1 is established, a relationship |Vpx2|<|Vpx1| is established except for Vpx1=Vpx2=0. In this manner, in the liquid crystal display device having the pixel structure shown in FIG. 26, it is possible to make the voltage Vpx1 applied to the liquid crystal layer in the sub pixel A and the voltage Vpx2 applied to the liquid crystal layer in the sub pixel B different from each other in the inside of one pixel and hence, the viewing angle characteristics can be improved.
FIG. 27 shows the constitutions of the pixel electrodes 116, 117 in the vicinity of the slit 144. FIG. 28 shows a display state of the same region as FIG. 27 when the pixel is displayed in white. In FIG. 28, an example of polarization axes 186a, 187a of polarizers 186, 187 is shown together with a region. FIG. 29 schematically shows the alignment of liquid crystal molecules 108 in a region inside a circle P in FIG. 28. As shown in FIG. 27 to FIG. 29, the liquid crystal molecules 108a to which a voltage is applied are respectively tilted normal to the extending direction of the slit 144 and, at the same time, in the directions opposite from each other using the slit 144 (and the linear projection 142) as a boundary. However, although the liquid crystal molecules 108b, 108c in the region above the slit 144 are tilted parallel to the direction that the slit 144 extends, the liquid crystal molecules 108b, 108c are not regulated with respect to the side to which they are tilted. In the region above the slit 144, the liquid crystal molecules 108b which are tilted downwardly in FIG. 29 and the liquid crystal molecules 108c which are tilted upwardly exist and hence, nodes (singular points) 162a, 162b of the liquid crystal alignment are formed. The singular points 162a, 162b are formed at random positions above the slits 144 and hence, the control of the formation positions is difficult. Further, there may be a case that the singular points 162a, 162b are moved along with a lapse of time. Since the spatial and long-period fixing of the formation positions of the singular points 162a, 162b is difficult, after a black display is performed, there may be a case in which the formation positions of the singular points 162a, 162b differ between a state in which white is displayed through an intermediate gray scale display and a state in which white is displayed immediately after the black display. That is, even these white displays are the same, they pass through the different voltage applying histories and hence, they differ in the positions of the singular points 162a, 162b whereby the display becomes different depending on the viewing direction of the screen. Further, when a pressure is locally applied to the display screen with finger pushing or the like and the alignment of the liquid crystal is disturbed, there may be a case that an original alignment state cannot be restored. In this manner, the conventional liquid crystal display device has a drawback that a favorable display quality can not be achieved.
Here, between a drain bus line 114 and the pixel electrodes 116, 117, a given electric capacitance is formed. In the constitution in which an overcoat layer having a large film thickness is not formed as a layer between the drain bus line 114 and the pixel electrodes 116, 117, due to the difference in distance within a substrate plane between the drain bus line 114 and the pixel electrodes 116, 117, a value of the formed electric capacitance is liable to be easily changed. Accordingly, when a relative patterning displacement is generated with respect to the drain bus line 114 and the pixel electrodes 116, 117 due to shot irregularities which occur when the division exposure is performed or the like, for example, in the manufactured liquid crystal display device, the display irregularities which differ in display characteristics for every division exposure region are observed with naked eyes. Accordingly, it is necessary to separate end portions of the pixel electrodes 116, 117 from the drain bus line 114 as much as possible so as to make the difference in display characteristics hardly visible even when the patterning displacement occurs. However, when the end portions of the pixel electrodes 116, 117 are separated from the drain bus line 114, regions where the pixel electrodes 116, 117 are formed become narrow and hence, an aperture ratio of the pixel is lowered thus giving rise to a drawback that the brightness is lowered.
Further, in laminating the TFT substrate 102 and the counter substrate 104 to each other, there may arise a given lamination displacement. Accordingly, it is necessary to make an opening region of a BM 145 formed on the counter substrate side narrower than the regions where the pixel electrodes 116, 117 are formed on the TFT substrate 102 side. Accordingly, there arises a drawback that the aperture ratio of the pixels and the brightness are further lowered.
[Patent document 1] Japanese Patent Laid-open Publication H-2(1990)-12
[Patent document 2] US Patent Specification 4840460
[Patent document 3] Japanese Patent Publication 3076938


An article of footwear including an upper and a sole assembly secured to the upper and including a support assembly having an upper member and a lower member spaced from the upper member. A first layer is positioned beneath and in contact with the upper member and has a wave shaped profile with a plurality of first wave crests and first wave troughs. A second layer is positioned above the lower member and has a wave shaped profile with a plurality of second wave crests and second wave troughs.

A conventional article of athletic footwear includes two primary elements, an upper and a sole structure. The upper provides a covering for the foot that securely receives and positions the foot with respect to the sole structure. In addition, the upper may have a configuration that protects the foot and provides ventilation, thereby cooling the foot and removing perspiration. The sole structure is secured to a lower portion of the upper and is generally positioned between the foot and the ground. In addition to attenuating ground reaction forces (i.e., imparting cushioning), the sole structure may provide traction and control foot motions, such as pronation. Accordingly, the upper and the sole structure operate cooperatively to provide a comfortable structure that is suited for a variety of ambulatory activities, such as walking and running.
The sole structure of athletic footwear generally exhibits a layered configuration that may include a comfort-enhancing insole, a resilient midsole formed from a polymer foam material, and a ground-contacting outsole that provides both abrasion-resistance and traction. The midsole is the primary sole structure element that imparts cushioning and controls foot motions. Suitable polymer foam materials for the midsole include ethylvinylacetate or polyurethane, which compress resiliently under an applied load to attenuate ground reaction forces created by the impacts of running and jumping. Conventional polymer foam materials are resiliently compressible, in part, due to the inclusion of a plurality of open or closed cells that define an inner volume substantially displaced by gas. The polymer foam materials of the midsole may also absorb energy when compressed during ambulatory activities. The compression of the foam is affected by hysteresis loss, and deflection of such systems is affected by the volume of the compressed mass of the midsole.
It would be desirable to provide an article of footwear that reduces or overcomes some or all of the difficulties inherent in prior known devices. Particular objects and advantages will be apparent to those skilled in the art, that is, those who are knowledgeable or experienced in this field of technology, in view of the following disclosure of the invention and detailed description of certain embodiments.

This patent is subject to a terminal disclaimer.

Article of footwear with multi-layered support assembly


A security system and method of providing security in a retail environment or the like, comprising shopping trolleys associated with the retail enviroment fitted with security devices having a receive-only wireless receiver and a processor. The receiver receiving wireless signals transmitted from one or more transmitters located at various locations around the retail enviroment. By analyzing the wireless signals as it passes thereby, the processor of the security device may determine a location and/or a direction of travel of a shopping trolley to which it is fitted. In addition, an alarm signal may be raised if a predetermined signal or sequence of signals is detected.

It is well known that it is desirable to provide security for various types of articles. For example, items of value such as clothing or other goods may be stolen from a retail store environment by simply placing them in a shopping trolley and pushing the trolley from the store without payment, a form of crime known as a "push-out" or "push-through".
The primary form of deterrent in common use in such environments is the Electronic Article Surveillance (EAS) system, for example those manufactured by the Sensormatic Electronics Corporation (for example see U.S. Pat. No. 3,895,368: "Surveillance system and method utilising both electrostatic and electromagnetic fields"). In these systems, some form of passive (unpowered) tag is attached to the item to be guarded and normally removed or deactivated at the checkout till. If the item is not taken to a checkout then the tag is not removed, and its presence is detected by loops at the store exit, causing an alarm. The loops generate an alternating electromagnetic and/or electrostatic field with particular characteristics, the presence of a tag then causing perturbations in this field which are detected by the loop, causing an alarm to sound to warn security staff that a theft is occurring.
Various tag-construction and tag-detection methods are employed by these systems, operating at various frequencies from several 100 Hz to 100 kHz and above. An example is acousto-magnetic detection whereby a magnetic material in the tag is caused to resonate by a short burst of excitation from the loops, and this resonance then induces back a small "ringing" current in the loops which causes the alarm to sound. Alternatively the tag may contain a diode which causes re-radiation of received energy at harmonic frequencies, this again being detected by the loops. Other methods are used also. The precise mechanism of these systems is not relevant to the present invention, the important feature being that all such systems use one or more loops located at the store exits which transmit a detectable AC electromagnetic field with defined characteristics.
It is known from DE 195 29 456 to provide transponders or barcodes on individual supermarket trolleys and to monitor movement of the trolleys about a store by interrogating the trolleys electromagnetically or by way of a barcode reader at predetermined locations. This allows an alarm to be generated if a trolley is detected to have been pushed into a store and then out again without passing through a checkout. This system makes no use of existing EAS infrastructures.
A more sophisticated system is known from the present applicant's co-pending International patent application WO 01/27891. There is disclosed a security system for protecting articles, the system comprising at least one Electronic Article Surveillance (EAS) loop, one Emitting Unit and one Detecting Unit attached to each article to be protected (generally a shopping trolley), the Detecting Unit having a detector to detect electromagnetic fields emitted by the EAS loop and the Emitting Unit and to distinguish between them, and an alarm generator for generating an alarm if a predetermined sequence of fields is detected. The system combines existing EAS loops normally present in a retail store with Emitting Units and Detecting Units so as to monitor movement of articles, especially supermarket trolleys, around the retail store. Each Detecting Unit may provide two-way communication with the Emitting Unit and thereby to provide information regarding a location and/or status of the Detecting Unit. Accordingly, each Detecting Unit may require relatively complex and expensive electronics.
WO 98/46469 discloses a security system for preventing theft of shopping trolleys and the like. One wheel of each trolley is provided with a selectively activatable braking mechanism, the mechanism being activated when the trolley passes over a signal cable configured as a loop that generally surrounds a retail environment (e.g. the grounds of a supermarket including its car parking area). The braking mechanism is activated by simply detecting an electromagnetic field generated by the signal cable. The system, however, does not provide any way of monitoring individual trolleys or their locations. Similar systems are disclosed in U.S. Pat. Nos. 6,037,869, 6,127,927, 6,353,388 and 6,362,728.

System and method for security and electronic article surveillance


A medical device for treating an airway of a patient. The medical device may include an elongate tubular member having a proximal end, a distal end, and a lumen extending therebetween. The medical device may also include a plurality of conductive elements disposed on a surface of the elongate tubular member. In some embodiments, at least one of the plurality of conductive elements may be disposed distally of another of the plurality of conductive elements. In addition, each of the plurality of conductive elements may be electrically coupled to a surface of the lumen. The medical device may also include a piston movably disposed within the lumen. The piston may include a distal portion configured to make electrical contact with one or more of the plurality of conductive elements.

Asthma may be a disease in which (I) bronchoconstriction, (ii) excessive mucus production, and/or (iii) inflammation and swelling of airways may occur, causing widespread but variable airflow obstruction, thereby making it difficult for the asthma sufferer to breathe. Asthma may be a chronic disorder, primarily characterized by persistent airway inflammation. Asthma may be further characterized by acute episodes of additional airway narrowing via contraction of hyper-responsive airway smooth muscle (ASM).
Asthma may be a serious condition with a growing number of sufferers and thus needs to be managed appropriately. A number of devices and techniques have been available for treating asthma; those techniques, however, are neither successful nor free from side effects. Overall, conventional devices have not proved sufficiently therapeutic, nor have they been designed to deal with complex asthmatic scenarios. Thus, there exists a need for new methods and/or devices to treat asthma and/or other conditions causing breathing difficulty or distress.

Medical device for treating airways and related methods of use


The directional coupler switch is configured by a parallel waveguide including a first region which is subjected to a nonlinear action and a second region which is not subjected to a nonlinear action. A dispersion relationship of the first region is varied due to the nonlinear action to switch over an exit of light entering from an input side to cause the switch to function as an optical switch. A dispersion curve of the first region has: a region of a constant frequency in one of an even mode and an odd mode which are two kinds of eigen modes of the parallel waveguide; and a region in which gradients of the two eigen modes at frequencies belonging to a region other than the region of a constant frequency are substantially equal to each other. The gradients of the two kinds of eigen modes indicate monotone decreasing or monotone increasing.

The present invention relates to a directional coupler switch in a dispersion relationship of a region of part of a parallel waveguide is changed due to a nonlinear action to change an exit of light entering from an input side, thereby functioning as an optical switch.
FIG. 1 shows a section view of a symmetric parallel waveguide, and a conceptual diagram of an even mode and an odd mode which are eigen modes thereof. Two waveguides of the symmetric parallel waveguide are referred to as A and B, respectively, and each of the waveguides has an even mode and an odd mode as its eigen modes.
FIG. 2A is a diagram showing superposition of the even mode on the odd mode, and FIG. 2B is a diagram showing superposition of the even mode on the odd mode in which the phase is inverted with respect to FIG. 2A. As shown in the figure, by inverting the phase, it is possible to laterally interchange electromagnetic distribution positions after superposition. When the even mode and the odd mode are added in a specific phase, light is concentrated on one of the waveguides (for example, the waveguide A) (FIG. 2A). When the even mode and the odd mode are added after inverting the phase (shifting by π), it is possible to represent a condition where light is concentrated on the waveguide B, conversely (FIG. 2B).
FIG. 3A is a diagram showing an initial condition in which output is performed from a waveguide that is opposite to the input waveguide, and FIG. 3B is a diagram showing a condition where the output waveguide is switched over by enhancing the intensity of coupling, so that output is performed from the waveguide which is the same as the input waveguide. When a phase difference between the even mode and the odd mode on the output side can be changed by π by means of external control, the output can be intentionally switched over between A and B, thereby causing the parallel waveguide to function as a switch.
(Description of a Structure in which a Refractive Index Variable Section, and a Refractive Index Fixed Section are Separately Provided)
FIG. 4 is a schematic diagram of a directional coupler switch. A region 1 is a portion which is subjected to a nonlinear action, and a region 2 is a portion which is not subjected to the action. The dispersion relationship in the region 1 is varied due to the nonlinear action, so that the exit of light entering from the input side is changed from an off-state output to an on-state output, thereby causing the switch to function as an optical switch.
Switching is performed by the variation of a dispersion curve due to the nonlinear effect.
The length of a portion in which the variation is performed (the region 1) is Lsw, and the length of a portion in which the variation is not performed (the region 2) is Lfix.
The switch-off state is defined as a condition in which light is emitted from a waveguide on an opposite side to the incident waveguide, after the light is propagated through the regions 1 and 2.
The switch-on state is defined as a condition in which light is emitted from a waveguide on the same side as the incident waveguide, after the light is propagated through the regions 1 and 2.
The wave numbers of the even mode and the odd mode of the region 2 are represented by k2e and k2o.
The wave numbers of the region 1 in the switch-off state are represented by k1e,off and k1o,off.
The wave numbers of the region 1 in the switch-on state are represented by k1e,on and k1o,on.
The switch-off state satisfies the following expression:
[Ex 1]Lsw(k2e,off−k2o,off)+Lfix(k2e−k2o)=(2m+1)π: m is an arbitrary integer  (1)
The switch-on state satisfies the following expression:
[Ex 2]Lsw(k1e,on−k1o,on)+Lfix(k2e−k2o)=2lπis an arbitrary integer  (2)
When a structure which satisfies the conditions is produced, it is possible to realize a directional coupler switch.
(Description of Switching Length)
When a difference between Expressions (2) and (1) is obtained, the following is held:
[Ex. 3]Lsw{(k1e,on−k1o,on)−(k1e,off−k1o,off)}=(2m+1)π: m is an arbitrary integer  (3)Lse is referred to as a switching length.(Conditions for Shortening the Switching Length)
The switching length is represented by the following:
[Ex. 4]
                                                                        L                sw                            =                                                                                (                                                                  2                                                m                                            +                      1                                        )                                                      π                                                                      (                                                                  k                                                                              1                                                        e                                                    ,                          on                                                                    -                                              k                                                                              1                                                        o                                                    ,                          on                                                                                )                                    -                                      (                                                                  k                                                                              1                                                        e                                                    ,                          off                                                                    -                                              k                                                                              1                                                        o                                                    ,                          off                                                                                )                                                                                =                                                                                (                                                                  2                                                m                                            +                      1                                        )                                                      π                                                                      (                                                                  k                                                                              1                                                        e                                                    ,                          on                                                                    -                                              k                                                                              1                                                        e                                                    ,                          off                                                                                )                                    -                                      (                                                                  k                                                                              1                                                        o                                                    ,                          on                                                                    -                                              k                                                                              1                                                        o                                                    ,                          off                                                                                )                                                                                (        4        )            The dispersion relationships in the even and odd modes are represented by ω1e (k,n) and ω1o (k,n). In the expression, n is a parameter which indicates a factor for varying the dispersion curve such as a refractive index of a medium. As for the even mode, a total differential is obtained as follows:
[Ex. 5]
                              ⅆ                      ω                          1                            e                                      =                                                            ∂                                  ω                                      1                                        e                                                                              ∂                k                                                                ⅆ              k                                +                                                    ∂                                  ω                                      1                                        e                                                                              ∂                n                                                                ⅆ              n                                                          (        5        )
When an operating frequency is fixed to a specific value, dω1e=0. When the expression is solved with respect to dk, the following relationship is obtained:
[Ex. 6].
                              ⅆ          k                =                              -                          1                                                ∂                                      ω                                          1                                            e                                                                                ∂                  k                                                                                ∂                              ω                                  1                                    e                                                                    ∂              n                                                      ⅆ            n                                              (        6        )            An amount of variation of n when the switch-off state is changed to the on state is represented by Δn. In the case where the amount of variation is minute, the following is held:
[Ex. 7]
                                          k                                          1                                e                            ,              on                                -                      k                                          1                                e                            ,              off                                      ≅                              -                          1                                                                                ∂                                              ω                                                  1                                                    e                                                                                ∂                      k                                                                                                                              k                    =                                          k                                                                        1                                                    e                                                ,                        off                                                                              ,                                      n                    =                                          n                      off                                                                                ∂                              ω                                  1                                    e                                                                    ∂              n                                          Δ                                                              n                                    (        7        )            The same relationship is held for the odd mode, similarly.
Since the shift amount of the dispersion curve due to the variation of the parameter n is substantially constant, the following relationship can be established.
[Ex. 8]
                    ∂                  ω                      1                        e                                      ∂        n              ≅                  ∂                  ω                      1                        o                                      ∂        n              =  CBy using this relationship, Lsw can be expressed as follows:
[Ex. 9]
                                                                        L                sw                            ≅                                                                                (                                                                  2                                                m                                            +                      1                                        )                                                      π                                                                                -                                              1                                                                              ∂                                                          ω                                                              1                                                                e                                                                                ∂                            k                                                                                ∂                                                  ω                                                      1                                                        e                                                                                ∂                        n                                                                                Δ                                                                                n                                    +                                                            1                                                                        ∂                                                      ω                                                          1                                                            o                                                                                ∂                          k                                                                                ∂                                                  ω                                                      1                                                        o                                                                                ∂                        n                                                                                Δ                                                                                n                                                                                =                                                                                (                                                                  2                                                m                                            +                      1                                        )                                                      π                                                                      (                                                                  -                                                  1                                                                                ∂                                                              ω                                                                  1                                                                    e                                                                                ∂                              k                                                                                +                                              1                                                                              ∂                                                          ω                                                              1                                                                o                                                                                ∂                            k                                                                                )                                                      C                                                                                Δ                                                                                n                                                                                (        8        )            In order to reduce the length Lsw, a difference between the followings:
[Ex. 10]
            ∂              ω                  1                    e                            ∂      k                    and                        ∂              ω                  1                    o                            ∂      k      that is, a difference in group velocity between the even mode and the odd mode is increased, whereby the length can be shortened.(Definition of Bandwidth)
The propagation constant of the eigen mode of a directional coupler is varied depending on a frequency. Therefore, a phase difference between the even mode and the odd mode after the propagation of a predetermined distance fluctuates depending on the frequency of the propagation light. For a directional coupler which is designed so that light incident on the side A at a certain frequency (operating frequency) ωo can be taken out from the side B, when light of a different frequency is incident, deviation occurs in a phase difference between the even mode and the odd mode at the emitting end. Therefore, the output from the side B is decreased, and some light may be emitted from the side A. Consequently, a frequency range in which the variation in phase difference between the even and odd modes at the emitting end falls within an allowable amount φ is defined as a bandwidth.
(Conditions for Widening a Bandwidth)
An allowable phase difference is set to ±φ. Consideration is performed for the switch-off state. At the operating frequency, Expression (1) is held. When the wave numbers of the regions 1 and 2 in the case where the operating frequency is deviated by Δωoff are k′1e,off, k′1o,off, k′2e, and k′2o, respectively, the relationship with respect to the allowable phase difference is as follows:
[Ex. 11]Lsw(k′1e,off−k′1o,off)+Lfix(k′2e−k′2o)=(2m+1)π+φ  (9)When Expression (1) is subtracted from Expression (9), the following is obtained:
[Ex. 12]Lsw{(k′1e,off−k′1o,off)−(k1e,off−k1o,off)}+Lfix{(k′2e−k′2o)−(k2e−k2o)}=φ  (10)Based on the differential expression (5) of the dispersion relationship, in this case, the frequency fluctuates, and the refractive index is constant, so that the following can be represented.
[Ex. 13]
                                          k                                          1                                e                            ,              off                        ′                    -                      k                                          1                                e                            ,              off                                      ≅                              1                                                                                ∂                                          ω                                              1                                                e                                                                                ∂                    k                                                                                                                k                  =                                      k                                                                  1                                                e                                            ,                      off                                                                      ,                                  n                  =                                      n                    off                                                                                Δ                                                              ω                                    (        11        )
Since the differences of other wave numbers can be represented similarly, Expression (10) can be expressed as follows:
[Ex. 14]
                                                        L              sw                        (                                                            1                                                                                ∂                                                      ω                                                                                1                                                                e                                                            ,                              off                                                                                ∂                          k                                                                                                                                                    k                        =                                                  k                                                                                1                                                            e                                                        ,                            off                                                                                ,                                              n                        =                                                  n                          off                                                                                Δ                                                                                ω                  off                                            -                                                1                                                                                ∂                                                      ω                                                                                1                                                                o                                                            ,                              off                                                                                ∂                          k                                                                                                                                                    k                        =                                                  k                                                                                1                                                            o                                                        ,                            off                                                                                ,                                              n                        =                                                  n                          off                                                                                Δ                                                                                ω                  off                                                      )                    +                                    L              fix                        (                                                            1                                                                                ∂                                                      ω                                                          2                                                            e                                                                                ∂                          k                                                                                                                                  k                      =                                              k                                                  2                                                    e                                                                                Δ                                                                                ω                  off                                            -                                                1                                                                                ∂                                                      ω                                                          2                                                            e                                                                                ∂                          k                                                                                                                                  k                      =                                              k                                                  2                                                    o                                                                                Δ                                                                                ω                  off                                                      )                          =        ϕ                            (        12        )
                              Δ                                                                          ω            off                          =                  ϕ                                                                                L                      sw                                                                                (                                                                        1                                                                                ∂                                                                      ω                                                                                1                                                                                e                                                                            ,                                      off                                                                                ∂                                  k                                                                                                                                                                k                                =                                                                  k                                                                                1                                                                            e                                                                        ,                                    off                                                                                ,                                                              n                                =                                                                  n                                  off                                                                                -                                                  1                                                                                ∂                                                                      ω                                                                                1                                                                                o                                                                            ,                                      off                                                                                ∂                                  k                                                                                                                                                                k                                =                                                                  k                                                                                1                                                                            o                                                                        ,                                    off                                                                                ,                                                              n                                =                                                                  n                                  off                                                                                )                                                        +                                                                                L                    fix                                                                          (                                                                  1                                                                                ⅆ                                                                  ω                                                                      2                                                                        e                                                                                ⅆ                                k                                                                                                                                                                k                            =                                                          k                                                              2                                                                e                                                                                -                                              1                                                                                ⅆ                                                                  ω                                                                      2                                                                        o                                                                                ⅆ                                k                                                                                                                                                                k                            =                                                          k                                                              2                                                                o                                                                                )                                                                                (        13        )            The obtained result Δωoff is the bandwidth in the switch-off state. The bandwidth in the switch-on state can be obtained in the same way. The bandwidth of a directional coupler switch falls within a common range of the bandwidths in the switch on and off states. In order to increase the bandwidth, the denominator of Expression (13) should be reduced. In other words, a difference between the followings:
[Ex. 15]
            ∂              ω                  1                    e                            ∂      k                    and                        ∂              ω                  1                    o                            ∂      k      that is, a difference in group velocity should be reduced.(Trade-Off Relationship)
As described above, in order to shorten the switching length, it is necessary to increase the difference in group velocity between the even mode and the odd mode. However, in order to widen the bandwidth, it is necessary to decrease the difference in group velocity. They contradict each other.
In this way, they are in a trade-off relationship. For this reason, in a conventional directional coupler switch which is configured by a simple symmetric parallel waveguide, either of the switching length or the bandwidth may be sacrificed.

National Institute of Advance Industrial Science and Technology


A smaller electrode layer of an upper electrode is formed on a surface of a free magnetic layer. A domain controlling film of an insulating material is formed adjacent to the smaller electrode layer on the surface of the free magnetic layer. Magnetization of the free magnetic layer is oriented in a single direction based on magnetic exchange coupling between the domain controlling film and the free magnetic layer. An electric connection is established between the free magnetic layer and the upper electrode only through the smaller electrode layer. The path of a sensing current can be reduced in the free and a pinned magnetic layer. A higher sensitivity can thus be obtained in the CPP structure magnetoresistive element. Effective magnetic core width can also be reduced in the CPP structure magnetoresistive element.

1. Field of the Invention
The present invention relates to a current-perpendicular-to-the-plane ("CPP") structure magnetoresistive element which allows a sensing current to flow through a magnetoresistive film, which is layered over a predetermined datum plane, and along a perpendicular direction normal to the datum plane. More particularly, the present invention relates to a CPP structure magnetoresistive element which includes an electrically-conductive free magnetic layer, an electrically-conductive pinned magnetic layer, and an electrically-conductive non-magnetic intermediate layer interposed between the free and pinned magnetic layers.
2. Description of Related Art
A CPP structure magnetoresistive element including a so-called spin valve film is known in the art. A CPP structure magnetoresistive element of the known type allows magnetization of a free ferromagnetic layer within a spin valve film to rotate in response to an applied magnetic field. In such cases, it would be preferable to previously establish the magnetization along a predetermined single direction within the free ferromagnetic layer. A pair of so-called domain controlling films are thus utilized to orient the magnetization. These domain controlling films are disposed to interpose the spin valve film over the datum plane. The free ferromagnetic layer of the spin valve film is thus located within a biasing magnetic field established between the domain controlling films.
The intensity of the biasing magnetic field, however, becomes reduced at a location more remote from the domain controlling film within the free ferromagnetic layer. A magnetic field having such a smaller intensity tends to lead to a failure to establish a unity of the magnetization, or a single magnetic domain, within the free ferromagnetic layer. A biasing magnetic field of a sufficient intensity cannot therefore be obtained without further reducing the size or width of the spin valve film. Additionally, such domain controlling films suffer from less accuracy in form or shape in a production process. Since the intensity of the biasing magnetic field tends to be influenced by the form or shape of the domain controlling films, it has been difficult to obtain a stable biasing magnetic field according to the conventional method.
Spin valve films are generally made of electrically-conductive materials. Sensing currents are therefore able to flow through anywhere in the entire spin valve film. Accordingly, it has been impossible to reduce the path of the sensing current within the spin valve film unless the spin valve film is also reduced in size. A reduced path of the sensing current can lead to a higher sensitivity of the CPP structure magnetoresistive element. Also, a reduced sensing current path can lead to a reduced effective width of a magnetic core, which serves to improve the resolution when the CPP structure magnetoresistive element is used to read magnetic information.
Accordingly an object of the present invention is to provide a CPP structure magnetoresistive element which can sufficiently establish a single magnetic domain within a free magnetic layer without having to further reduce the size of a magnetoresistive film.

Magnetoresistive element having current-perpendicular-to-the-plane structure and having improved magnetic domain control


It is an object of the present invention to provide a semiconductor device that is able to have the same Vp in all FETs formed on one chip.. A semiconductor device of the present invention comprises a semiconductor substrate having a first region and a second region on a main surface; a first field effect transistor formed on the first region of the main surface, the first field effect transistor having first gates arranged in a plurality of rows and having a first total gate width, the first gates respectively establishing a first gate length and a first gate width; and a second field effect transistor formed on the second region of the main surface, the second field effect transistor having second gates arranged a plurality of rows and having a second total gate width smaller than the first total gate width, the second gates respectively establishing a second gate length substantially the same as the first gate length and a second gate width substantially the same as the first gate width.

1. Field of the Invention
The present invention relates to a semiconductor device, particularly to a layout of a power field effect transistor (FET).
2. Description of the Related Art
In a conventional semiconductor device, a high power FET and a medium power FET are respectively fabricated as a single-chip discrete device. These are connected together on a circuit substrate. Gate widths of these FETs vary based on utilized frequencies and power supplies. For example, in 900 MHz cellar phones, gate widths of the high power FETs are about 10 mm and gate widths of the medium power FETs are about 3 mm. A gate width usually differs between respective FETs FIG. 4(a) is a plan view showing a high power FET in accordance with the prior art.
FIG. 4(b) is a plane view showing a medium power FET having the same gate width, in accordance with the prior art.
Referring to FIG. 4(a), t-he high power FET comprises a plurality of source pads S41-S44, a plurality of gate pads G41-G43, a plurality of drain pads D41-D44, and a plurality of gates F41, formed on a semiconductor chip C41. An array has the source pads S41-S44 and the gate pads G41-G43 alternately arranged, and they are separated from the drain pads D41-D44, by the gates F41. A gate width of the gates F41 is set to L41.
Referring to FIG. 4(b), the medium power FET comprises a plurality of source pads S47, S48, a gate pad G45, a plurality of drain pads D47, D48, and a plurality of gates F42, formed on a semiconductor chip C43. An array has the source pads S47, S48 and the gate pad G45 arranged alternately, and they are separated from the drain pads D47, D48, by the gates F42. A gate width of the gates F42 is set to L42, which is shorter than L41.
Since the high power FET and the medium power FET, in accordance with the prior art, have respectively different gate widths, a pinch off voltage (Vp) of each O-FET is also respectively different when an implantation condition and a recess condition for forming the conducting layers of the FETs are the same.

Semiconductor device having two composite field effect transistors


A system is described for measuring amniotic fluid volume and/or assessing fetal weight. The system includes an ultrasound apparatus to scan a pregnant uterus and to generate data representative of a three-dimensional construction of the scanned uterus, and a processor to compute a volume of amniotic fluid or weight of fetal tissue based on the three-dimensional construction of the scanned uterus. Also a method of computing a volume of amniotic fluid and/or a weight of fetal tissue.

1. Field
Method and system for measuring amniotic fluid volume.
2. Background
Amniotic fluid is the fluid within the pregnant uterus enclosed by the fetal membranes and placenta. Amniotic fluid helps protect and cushion the fetus and plays a role in the development of various fetal organs including the lungs, kidneys, and gastrointestinal tract. Too much or too little amniotic fluid may be associated with abnormalities in development of the fetus or other pregnant complications.
Currently, ultrasound techniques are used to provide a measurement of amniotic fluid volume referred to as the amniotic fluid index (AFI). AFI may be assigned by adding linear determinations of amniotic fluid pocket depths and/or two-dimensional assessments of amniotic fluid pocket dimensions. AFI data obtained may be compared to data listing normal values for the pregnancy stage of the patient for which an AFI is determined. AFI may provide a way to screen for certain abnormalities during pregnancy. However, AFI is not a good predictor of actual amount of amniotic fluid.
Accurate assessment of amniotic fluid volume may be important for various reasons. First, it provides an indication of fetal stress. Fetal stress may cause the amniotic fluid volume to decrease due to fetal renal metabolic changes and decreased urine output, which constitutes the main generator of amniotic fluid. Second, low amniotic fluid volume renders the fetus at risk for compression of the umbilical cord, which is often an emergency situation. Accordingly, an accurate assessment of amniotic fluid volume may be useful in screening for certain fetal stress conditions and/or other pregnant complications.

Method and system for measuring amniotic fluid volume and/or assessing fetal weight

Los Angeles Biomedical Research Institute at Harbor-UCLA Medical Center


In one aspect, a transparent laminate, including a transparent material layer, a transparent high-elasticity layer laminated on both sides of the transparent material layer and having Young's modulus of less than or equal to about 10 MPa, and a transparent high-hardness layer sequentially laminated on the transparent high-elasticity layer that is laminated on both sides of the transparent material layer and having a surface hardness of greater than or equal to a pencil hardness of about 6H is provided.

1. Field
The present disclosure relates to a transparent laminate, a window panel for a display device, and a display device including the same.
2. Description of the Related Technology
Mobile devices such as mobile phones or tablet PCs may include a touch panel, and tempered glass may be used as a window panel for protecting the surface of their display. However, tempered glass applied to portable devices, such as mobile phone, may be broken due to external impact. Also, when tempered glass is broken the glass may be scattered. For this reason, anti-scattering film may be used. Moreover, since the specific gravity of the tempered glass is around 2.5, which is more than twice as high as typical plastic material, it is disadvantageous to use tempered glass in a thin and light-weight mobile device. Thus, including tempered glass may comparatively weight to a device due to its specific gravity.

Transparent laminate, window panel for display device and display device including the window panel


A process for the production of low sulfur hydrocarbonaceous products. The hydrocarbon feedstocks are processed in integrated desulfurization zone, hydrocracking and hydrogenation zones to produce ultra low sulfur diesel, low sulfur naphtha products and low sulfur heavy distillate.

The field of art to which this invention pertains is desulfurization of hydrocarbon feedstocks to low levels of sulfur. Hydrodesulfurization processes have been used by petroleum refiners to produce more valuable hydrocarbonaceous streams such as naphtha, gasoline, kerosene and diesel, for example, having lower concentrations of sulfur and nitrogen. Feedstocks most often subjected to hydrotreating or desulfurization are normally liquid hydrocarbonaceous streams such as naphtha, kerosene, diesel, gas oil, vacuum gas oil (VGO) and reduced crude, for example. Traditionally, hydrodesulfurization severity is selected to produce an improvement sufficient to produce a marketable product or a suitable feedstock for downstream processing. Over the years, it has been recognized that due to environmental concerns and newly enacted rules and regulations, saleable products must meet lower and lower limits on contaminants such as sulfur and nitrogen. Recently new regulations were proposed in the United States and Europe which basically require the complete removal of sulfur from liquid hydrocarbons which are used as transportation fuels such as gasoline and diesel.
Desulfurization is generally accomplished by contacting the hydrocarbonaceous feedstock in a desulfurization reaction vessel or zone with a suitable desulfurization catalyst under conditions of elevated temperature and pressure in the presence of hydrogen to yield a product containing the desired maximum limits of sulfur. The operating conditions and the desulfurization catalysts within the desulfurization reactor influence the quality of the desulfurized products.
Although a wide variety of process flow schemes, operating conditions and catalysts have been used in commercial desulfurization activities, there is always a demand for new desulfurization methods which provide lower costs and the required product quality. With the mandated low sulfur transportation fuels, the process of the present invention greatly improves the economic benefits of producing low sulfur fuels.


A method of predicting ambient air temperature outside a passenger compartment of a vehicle. The method measures air temperature with a temperature sensor, applies a correction strategy, and determines a predicted temperature value.

1. Field of the Invention
The present invention relates to a method of determining ambient air temperature, and more specifically to a method of determining ambient air temperature outside a motor vehicle.
2. Background Art
Temperature sensors are used to measure the temperature of ambient air surrounding a motor vehicle. Such temperature sensors are often located where they may pick up heat from non-ambient heat sources, such as vehicle components like an engine or radiator. Heat from these non-ambient heat sources, as well as self-heating effects of the temperature sensor, may result in inaccurate ambient air temperature readings.
Previous strategies for determining ambient air temperature, such as that described in U.S. Pat. No. 4,770,543, simply ignored air temperature sensor readings at low vehicle speeds. Consequently, accurate temperature readings were not available when a vehicle was stationary or moving slowly. Moreover, such strategies yielded erroneous temperature readings during rapid temperature changes, such as when a vehicle was moved from a warm interior location to a cold exterior environment.
Before applicant's invention, there was a need for a method of more accurately determining ambient air temperature. In addition, there was a need for a method that accounts for the heating effects of non-ambient heat sources. Additionally, there was a need for a method that provides improved responsiveness to rapid temperature changes. In addition, there was a need for a method that could reduce the number of air temperature sensors used on a motor vehicle. Problems addressed by the prior art as noted above and other problems are addressed by applicant's invention as summarized below.

Method of determining ambient air temperature