A communication terminal uses a Web printing function to print a Web page of a URL designated through an operation panel, together with the URL of the Web page and an entry column for entering keywords, on a sheet of paper. When an image is read from the sheet of paper, the communication terminal specifies contents written in a specific position. When any URL is contained in the contents and any keyword is specified together with the URL, the communication terminal registers the URL and the keyword associatively in a data table. After that, a user can make the communication terminal print the Web page of the designated URL by designating the URL registered in the data table on the basis of the keyword corresponding to the URL.

1. Field of the Invention
The present invention relates to a communication terminal used in a state where the communication terminal is connected to a network, and a storage medium storing a terminal control program for controlling the communication terminal.
2. Description of the Related Art
At present, some communication terminal, such as a composite machine or a network printer, used in a state where the communication terminal is connected to a network has a function (hereinafter referred to as "Web printing function") of printing an image of a Web page accessed through the network on a printing medium. By means of the Web printing function, the Web page can be browsed through the printing medium.
Various techniques have been proposed for improvement of convenience at the time of browsing the Web page through the printing medium in recent years.
For example, as described in JP-A-10-162030, an image obtained by addition of footnotes made of character strings (i.e., URLs) indicating access data to the image of the Web page is printed on the printing medium when access data (hyperlink address) is contained in the Web page (hypertext document).
The Web page accessed through the network often contains access data for accessing (linking) other Web pages. In the case where only the image of the Web page is printed, a judgment cannot be made as to whether access data is contained in the Web page or not and as to which Web page can be accessed from the Web page, so that access data cannot be held in the printing medium. According to the technique disclosed in JP-A-10-162030, however, the user can make a judgment on the basis of the footnotes printed on the printing medium as to whether access data is contained in the Web page and as to which Web page can be accessed from the Web page, so that access data can be held also in the printing medium.
Incidentally, when a Web page is browsed through a Web browser (WWW browser) built in a personal computer which is a kind of communication terminal, registration (i.e., so-called "bookmark registration") of access data of the Web page may be performed in order to reduce labor required for inputting access data at the time of repeatedly accessing the Web page. As a result, when a user makes a simple operation of designating registered access data, the user can access and browse the Web page of the designated access data.
If registration of access data and user's designation of registered access data (and printing the Web page of the designated access data) can be provided in a communication terminal having a Web printing function, there is an expectation that convenience can be improved more greatly at the time of browsing the Web page through the printing medium.
In the related art, however, neither registration of access data nor user's designation of registered access data was performed in the communication terminal having the Web printing function. A technique for providing the registration of access data and user's designation of registered access data has been required.

Communication terminal, storage medium and communication system


A method and composition for suppressing or inhibiting the decomposing action of enzymes on hydrogen peroxide, e.g. peroxidase and catalase, during bleaching of cellulose fibres with hydrogen peroxide, especially in connection with the production of recycled paper, in such a way that microorganisms are not markedly affected, and discharges that are dangerous to the environment are minimized. The composition contains hydroxylamine, thiocyanate salts, formic acid, ascorbic acid or nitrites.

A criterion of paper quality is that it has high brightness and consequently is made from a sufficiently bleached pulp.
Different methods are known for bleaching of cellulose pulp such as addition of chlorine, hypochlorite, oxygen, ozone or hydrogen peroxide. These methods are generally combined in a bleaching process. Lately, environmental problems have attracted more attention and attempts have therefore been made to avoid bleaching with chlorine containing compounds since these, even in small quantities, are considered dangerous to the environment, despite a satisfactory bleaching with these chemicals. Oxygen containing compounds such as hydrogen peroxide, oxygen and ozone have therefore found increased use for bleaching of pulp. These compounds are decomposed to oxygen or substances that are environmentally acceptable. Hydrogen peroxide is preferred over ozone for economic and environmental reasons.
Bacteria are often present when cellulose pulp is bleached, especially when recycled paper is used. The bacteria produce enzymes like peroxidases and catalase that decompose hydrogen peroxide.
Attempts have been made to overcome the degrading action of the enzymes, especially catalase, by overdosing hydrogen peroxide, sometimes 6-8 times the normal dosage. Overdosing the hydrogen peroxide leads to a high dosage of sodium hydroxide and sodium silicate, and accordingly to increased costs.
Inhibition of catalase can also be accomplished by raising the temperature to 60.degree.-90.degree. C. or the pH to 10-14. However, a temperature rise may lead to a faster decomposition of the hydrogen peroxide and increased pH leads to yellowing of the pulp and consequently a need for more intense bleaching or a degradation of the pulp.
It has also been suggested that biocides could be added to kill the microorganisms and prevent the formation of catalase. Biocides are dangerous to the health and unsuitable from an environmental point of view. Moreover, when the microorganisms die, more catalase can come out into the process water.
Metal ions that are present, for example iron, manganese, copper and aluminum ions decompose hydrogen peroxide. To prevent this, complexing agents and sodium silicate are used today. Silicates are inclined to form deposits and the complexing agents are expensive and sometimes dangerous to use. Their influence on the environment is strongly questioned and not completely investigated.
From EP 0 562 835, it is known that small amounts of chlorine dioxide, bromine, chlorine, iodine and ozone can be used as oxidizing, enzyme inhibiting and germicidal agents when bleaching cellulose pulp with hydrogen peroxide. According to example 3 in the description, microorganisms in white water are killed with chlorine dioxide. Chlorine dioxide is a poisonous, explosive, corrosive and awkward substance that easily decomposes and has to be produced on site and kept in a dilute water solution. From an environmental point of view, these kinds of additives are also highly questioned.
U.S. Pat. No. 3,817,828 describes a method in which anionic surface active agents are combined with bacteriacidal substances, e.g. chlorine dioxide, hypochlorite or chlorine water to prevent bacterial growth. The used chlorine compounds are poisonous and dangerous to the environment, and although the method is declared to decrease the use of these, some chlorine compounds will be released to the environment.
G. Galland, E. Bernard, Y. Verac suggest in "Achieving a deinked pulp with high brightness" in Paper Technology, December 1989 different ways to increase the brightness when processing recycled paper by decreasing the hydrogen peroxide consumption. For instance, it is suggested that catalase are removed by eliminating the microorganisms that produce the enzyme or by destroying catalase before bleaching. A sodium hypochlorite treatment may be used to destroy catalase. However, sodium hypochlorite is a substance that is unsuitable for environmental reasons.
In principle the methods given in the two publications involve the use of bleaching agents that are harmful to the environment and are avoided nowadays, in small amounts in order to kill the microorganisms and deactivate the enzyme.
Additions of substances that affect the bleaching with hydrogen peroxide have been suggested. U.S. Pat. No. 3,193,445 describes a method in which the addition of 0.5 to 2.5 moles of acetic anhydride per mole remaining hydrogen peroxide is added in the end of the bleaching process in order to activate the remaining peroxide. Accordingly, the bleaching process of the pulp is prolonged. Derwent's abstract of SU 796 281 describes a method where 0.1-1 (w/w %) oxalate (calculated on dry pulp basis) is added together with hydrogen peroxide under alkaline conditions at 60.degree.-70.degree. C.
However, none of these references mention anything about the possibility to intensify the action of hydrogen peroxide by inhibiting hydrogen peroxide decomposing enzymes like peroxidases and catalases.

Inhibition of hydrogen peroxide decomposing enzymes during bleaching of cellulose fibers


An optical cross-connect connecting a series of optical input ports to a series of optical output ports includes at least a first group of input/output port arrays, each including a series of optical input/output ports disposed horizontally and configured to project or receive optical signals. A plurality of steering elements selectively steer optical signals along switching trajectories between the input and output ports. An angle-to-offset conversion unit converts optical signals propagating at the horizontal intra-array angles to corresponding spatial offset signals in the horizontal dimension. An optical interconnect includes a series of input/output regions, each being specific to a corresponding input/output port array and the input/output regions being divided vertically into elongated switching rows. Each input/output region receives spatial offset signals from the angle-to-offset conversion unit and optically interconnects each spatial offset signal from a first input/output region to a second input/output region.

Any discussion of the background art throughout the specification should in no way be considered as an admission that such art is widely known or forms part of common general knowledge in the field.
With the continued growth of information technology such as video-on-demand, mobile data and cloud computing, data traffic is increasing rapidly. This data is stored and routed through networks of datacenters located worldwide. Datacenters include banks of data servers interconnected by switches or cross-connects and routing cables, all contained within a secure, temperature controlled environment. Current datacenter and network architectures often experience difficulty in keeping up with this increase in data demand, leading to information bottlenecks.
Data routing using optical fibers is a primary transmission medium in datacenters due to its higher data rate capabilities, low loss, low power and reduced heat consumption. Switching between optical fibers within an optical network is typically performed by optical cross-connect switches (optical cross connects). However, conventional optical cross-connects used in external optical networks are generally not practical for use internally within datacenters due to their large size and high cost. The size of an optical cross-connect is generally limited by the fill factor of the arrays of switching mirrors and the collimating optics in the switch. Further, the size and cost of cross-connects generally scales up with increasing numbers of input and output fiber ports.
Other techniques are known for providing optical data routing, including using a matrix of mirror arrays in free-space propagation to direct optical beams. However, the optical beams have a large diameter to allow propagation, with a permissible level of loss, across free space. Another switching technique involves using Piezzo-electric beam steering devices. An example of this technique is disclosed in US Patent Application Publication 2008/0253715, entitled "Optical Switch" and assigned to Polaris Limited. These devices achieve low loss but do not have small form factors and hence are difficult to make compact. Waveguide and MEMs hinge mirrors, and "bubble" total internal reflection switches are also available but are yet to deliver practical results.
There is a need for an improved optical cross-connect that is compact in size and suitable for use in environments such as datacenters.


A hermetic container which can improve its stress resistance and its buckling strength and prevent deformation due to the atmospheric pressure. The space between the anode substrate and the cathode substrate in the hermetic container can be stably maintained. Anode conductors and fluorescent substance layers are formed on the inner surface of the anode substrate. Electron sources are formed on the inner surface of the cathode substrate so as to confront the corresponding display portions on the anode substrate. In order to complete a container, the anode substrate is spaced from the cathode substrate a predetermined distance apart and the fringe portions of the substrates are sealed. A supporting member is disposed in the container. The supporting member 15 consists of a plate in which plural through holes are formed at predetermined intervals and reinforcing supports which are respectively inserted into the through holes of the plate and of which the middle portions are bonded at the inlets of the through holes. Each reinforcing support has one end in contact with an inner surface of the anode substrate and the other end in contact with an inner surface of the cathode substrate. Each reinforcing support maintains the gap between the anode substrate and the cathode substrate at a fixed distance.

1. Field of the Invention
This invention relates to a hermetic container and to a supporting member which supports the inner surfaces of the hermetic container against the atmospheric pressure to prevent deformation of the hermetic container.
2. Description of the Related Art
A field-emission-type display device hereinafter referred to as a FED) which uses a field emission cathode acting as an electron source is well-known as a hermetic container of which the inside is maintained in a high vacuum state. In the FED shown in FIG. 5, an anode substrate 32 is sealed with respect to a cathode substrate 34 spaced from the anode substrate a predetermined distance apart and at the fringe portions of them to form the container 35. The anode substrate 32 has the inner surface on which anode conductors 31a and fluorescent substance layers 31b are formed. The cathode substrate 34 has the inner surface on which field emission cathodes are formed so as to confront the display section 31 on the anode substrate 32.
In this type of FED, the anode substrate 32 on which the display sections 31 are arranged in a fine dot pattern is formed of a thin glass plate. The cathode substrate 34 on which field emission cathodes 33 are formed is formed of a thin glass plate. The space between the anode substrate 32 and the cathode substrate 34 is, for example, 200 .mu.m to realize a thin display structure.
In the type of FED, since the space between the anode substrate 32 and the cathode substrate 34 is maintained by only the fringe portions of them, the mechanical strength is secured by thickening the anode substrate 32 and the cathode substrate 34.
However, as the FED is large sized, the anode substrate 32 and the cathode substrate 34 forming the container 35 must be thickened to withstand the external pressure and to realize a thin, light filed emission type display. Deformation of the anode substrate 32 or the cathode substrate 34 makes it difficult to maintain the space between the anode substrate 32 and the cathode substrate 34 to a fixed value, thus adversely affecting the display conditions. For that reason, as shown in FIG. 5, fiber supports each formed of a glass member and bead supports each formed of glass member acting as a reinforcing support are arranged at plural spots within the container 35. Thus, the supports bear against the atmospheric pressure on the container 34 to maintain the space between the anode substrate 32 and the cathode substrate 34.
The reinforcing supports (or pillars) 36 are arranged within the container 34 by using the dedicated jig 37 shown in FIG. 6. The jig 37, as shown in FIG. 6, includes a base plate 38 and a suction apparatus 40. The base plate 38 has through holes 38a which are formed at the corresponding positions where reinforcing supports 36 for the substrates 32 and 34 are arranged. The base plate 38 is closely disposed on the surface of the porous portion 39. The suction apparatus 40 sucks the reinforcing supports 36 respectively inserted into the through holes 38 through the porous portion 39 to hold them on the surface of the porous portion 39.
In order to arrange the reinforcing supports 36 within the container 35, the reinforcing supports 36 are inserted into the through holes 38a from the side of the other end surface 36b of each reinforcing support. In such a condition, the suction apparatus 40 sucks and holds the other surface 36b of each reinforcing support 36 through the porous portion 39, so that plural reinforcing supports 36 are arranged while being inserted into the through holes 38a. In this case, a fixing agent 41 is previously applied on one ends 36a of the reinforcing supports 36.
In the arrangement process, the reinforcing supports 36 are disposed on the anode substrate 32 and one ends 36a thereof are securely fixed with the fixing agent 41 under pressure. Thereafter, the anode substrate 32 on which reinforcing supports 36 are securer fixed are removed out of the jig 37. A fixing agent 2 is coated on the other end surfaces 36b of the reinforcing supports 36 and over the fringe portion of the anode substrate 32. The other end surfaces 36b of the reinforcing supports 36 are fixed on the cathode substrate 34 while the fringe portion of the anode substrate 32 is hermetically sealed with the fringe portion of the cathode substrate 34.
As described above, the reinforcing supports 36 are arranged using the jig 37 while the other ends of the reinforcing supports 36 are being sucked and held. Hence, by using reinforcing supports each having a small aspect ratio (a ratio of diameter to length), for example, (an aspect ratio of 50 .mu.m in diameter to 200 .mu.m in length), the reinforcing supports 36 sucked and held can be arranged with a small positional deviation and a small error with respect to the center of the other end surface 36b of each reinforcing support 36 when one ends surfaces 36 of the reinforcing supports 36 are forcibly disposed on the substrate.
However, the high resolution display restricts the area where the reinforcing supports are arranged, thus causing a reduction in diameter of the reinforcing support and an increase in the number of reinforcing supports. Moreover, In order to drive the field emission type display device at a high anode voltage, the spacing between the substrates 32 and 34 must be increased. This means that reinforcing supports with a large aspect ratio (for example, 50 .mu.m in diameter and 1 mm in length) are disposed between the substrates 32 and 34.
In the conventional structure, when the anode substrate 36 is supported on one end surfaces 36a of the reinforcing supports 36 under pressure, it largely deviates from the other end surfaces 36b thereof to be sucked and held acting as the positional center. As a result, it is difficult to arrange the reinforcing supports 36 with small errors and to fabricate a field emission type display. When the atmospheric pressure are added to the substrates 32 and 34, the reinforcing supports 36 arranged within the container 35 with large errors may be bent or broken. Therefore the conventional structure is poor in stress resistance and buckling strength so that the space between the substrates 32 and 34 cannot be stably maintained.
Where bead supports are used as reinforcing supports, the diameter thereof corresponds to the space between the substrates 32 and 34. Increasing the size of the bead support means increasing the whole volume thereof. A large bead support blocks electron beams falling onto the display surface so that the electron beams cannot effectively strike the display surface. As a result, the vignetting of electron beams causes due to the bead support so that the diameter of a bead support that can be used for a high resolution display is restricted. This further limits the anode voltage to be applied. Consequently, there is the disadvantage in that the luminous brightness of the field emission type display cannot be improved.

Hermetic container and a supporting member for the same


The present disclosure provides a track transmission system and the track transmission device thereof. The track transmission system comprises at least a track transmission device, a connecting device, and a control device. The track transmission device is provided for disposing slidably at least an electronic device. In addition, signal transmission with the control device can be accomplished through the connecting device. The electronic device is coupled to the circuit board of the track transmission device by contacting. As the electronic device slides along the track transmission device, signal transmission with the control device still can be maintained.

Thanks to the progresses in technologies, flat-panel displays (FPDs) have almost replaced completely cathode ray tube (CRT) displays and become the mainstream in modern display technologies. Compared with the bulky size of traditional CRT displays, FPDs have the advantages of low power consumption, low radiation, and thin outlines. In addition, the expansion in the size of FPDs also popularizes thin digital TVs in consumer and entertainment applications such as home viewing, outdoor advertisements, and exhibition purposes.
Currently, small-sized FPDs have been applied to product exhibition frames mainly for display product prices and product information. By avoiding manually changing the labels of product prices and product information, labor costs can be reduced. At present, each display is loaded with batteries and operates using battery power. Nonetheless, battery power tends to be consumed rapidly, which leads to increases in the consumption of batteries. Besides, labor is required for changing the batteries of displays, resulting in increases in labor costs. Then, each display updates the product prices and product information by connecting to handheld devices or main computers via a wireless module. However, the wireless module disposed in each display increases the cost.
Accordingly, the present disclosure provides a track transmission system and the track transmission device thereof. One or multiple electronic device can receive the external power supply and the signals transmitted by a control device at the remote site by means of the track transmission device. The electronic devices can slide along the track transmission device freely while keeping receiving the power supply and the transmitted signals. In addition, by using the control device, the information displayed on each electronic device can be changed real-timely. Thereby, the electronic device still can transmit signal without wireless modules and thus saving costs.

Track transmission system and track transmission device thereof


Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate.

1. Field of the Invention
The present invention relates to a semiconductor light emitting device and a method of manufacturing the same.
2. Description of the Related Art
A light emitting diode (LED) is one type of semiconductor light emitting device. In an LED, energy is released in the form of light due to electron-hole recombination in a p-n junction structure. That is, when a forward voltage is applied to a semiconductor of a specific element, electrons recombine with electron holes through a p-n junction, and an energy level therein becomes lower than in the case in which electrons and holes are separated. By this energy difference, an LED emits light to the outside.
At this time, the light is generated from an active layer, passes through an individual stack constituting a light emitting device, and is finally radiated to the outside. Meanwhile, an air layer forming the outer atmosphere of the light emitting device is a low refractive index layer having a refractive index of approximately 1, while the outermost layer of the light emitting device has a relatively high refractive index. Normally, when light is made incident onto a layer having a lower refractive index from a layer having a higher refractive index, the incident light is not entirely radiated but partially reflected, thereby impairing the light extraction efficiency of the light emitting device. Thus, a portion of light emitted from a light emitting region may be trapped within a light emitting structure without being radiated to the outside, thereby undermining light extraction efficiency. To address this issue in the related art, there has been an attempt to induce a change in a light path by forming an uneven structure in the outer part of a light emitting structure or the surface of a substrate.

Semiconductor light emitting device and method of manufacturing the same


A method and device are disclosed for supervising the operation of plural current transformers and for prevention of a malfunction, such as false tripping of power in an electrical system. Exemplary embodiments can include measuring current parameters (e.g., magnitude and phase angle) for each winding in current transformer (CT) sets. A negative sequence current can be calculated from measured phase currents and a fault condition determined. A phase angle difference parameter derived from phase measurements between two healthy CTs can be used as an additional condition parameter for reliable operation of equipment in the electrical system.

Power transformers are considered prime power equipment in an electrical power system, and faults in power transformers may lead to major consequences, both in terms of power failure for large groups of customers and in the terms of cost/time associated with the repair or replacement of a transformer. Major power equipment has been protected against faults with use of protection devices. These devices detect various fault conditions in the power system and provide trip signals to circuit breakers associated with power equipment to isolate the faulty equipment or the protected power equipment from the system.
In the present disclosure, a protection device may also be referred to as an intelligent electronic device (IED), protection relay or simply as a relay. One of the protection devices for power equipment is a differential relay. Known power transformer differential relays can utilize individual phase currents from different windings of the transformer in order to form the phase-based differential currents to monitor faults in the power transformer or the power system and protect the power transformer. The individual phase currents from different windings can be measured with the help of a current transformer (CT) connected in the path of each winding of the power transformer.
An exemplary technique for detecting abnormal operating conditions, such as unbalanced conditions in a power transformer (for example, applicable for any three phase equipment and transmission system) and resulting faults due to unbalanced operation, is to use phase sequence information (for example negative sequence currents). To provide protection, the protection relay should provide a trip signal to its respective circuit breaker before any damage or degradation can occur in the power equipment. Performance within one AC cycle time (power cycle) is, for example, desired.
Failure in a CT (for example, CT secondary winding failure by breakage or winding disconnections), can cause malfunction of the protective relays resulting in false tripping (spurious operation). Thus, the detection of an abnormal operating condition in the system may not be authentic.
Further, in modern numerical multifunction protection relays, CT secondary failure can also cause malfunctioning of other protection functions (such as a broken primary conductor protection) or can pose a safety hazard because of high voltage build up at the terminal as a result of breakage in a CT secondary winding/connection.
Detection of an authentic abnormal operating condition (e.g., faults) for transformers can be carried out by additionally monitoring other parameters or derivable values from these additional measurements (e.g., current/voltage) made in the system. Some examples are use of voltage values as a reference together with the monitored electrical current values, use of current values from another CT as a reference, and so forth. These arrangements involve an additional channel in the IED to supply a reference voltage or current to the IED.
An example is provided to illustrate the difficulty in supplying a reference voltage or current signal to the protection relay. Here, the CT secondary supervision is performed with use of a separate reference current input but the reference CT input would be needed for each CT set separately, thus making it a rather expensive solution and more difficult to integrate into the protective relay.
In a three winding differential protection relay, 12 CT inputs would be used to cover both the protection specifications (9CT) and the CT secondary supervision specifications (3CT) at the same time. Some known solutions use voltage as a reference for the current in detection of CT secondary failure, but also this solution can involve some extra measurements on top of the differential protection itself.

Method and an apparatus for supervision of current transformer in a differential protection system


A method and apparatus for loop detection for improved branch prediction accuracy. In one embodiment, the method may comprise executing a branch instruction, updating a plurality of event counts corresponding to the branch instruction in response to its executing, determining a loop behavior status corresponding to the branch instruction in response to the event count updating, and promoting the branch instruction to a loop branch prediction type in response to the determination of loop behavior status.

1. Field of the Invention
This invention relates to computer hardware and, more particularly, to branch prediction techniques.
2. Description of the Related Art
In many software applications, it may be necessary to iterate the same software steps a number of times to accomplish a particular program task. For example, a large array of variables may need to be initialized to a reset value before use, or a particular mathematical operation may need to be performed on each element of such an array. Rather than explicitly code each initialization or mathematical operation for each data element of such an array, a programmer may choose to employ a loop construct in a high-level programming language such as C or C++ to perform the operation over the whole data array iteratively, thereby potentially yielding more compact and efficient code.
For example, a programmer may code the operation to be performed on each data element in an abstract way, using an index variable to reference a particular data element. The programmer may then embed the abstract operation in an iterative loop, such as a C/C++ for-loop, to be executed a specific number of times, which number may also be referred to as the iteration count. The iteration count may for example be equal to the number of data elements to be processed. The iterative loop may also specify a counter variable to represent the current iteration number. Finally, the programmer may define a mapping from the current iteration number to the index variable used to reference a particular data element. For example, in a one-dimensional data array whose elements are indexed by integers, the current iteration number may map directly to the array index.
While executing, a loop construct may test the current iteration number against the iteration count to determine whether the end of the loop has been reached. For example, if the current iteration number is less than the iteration count, the loop may continue executing, while if the current iteration number is equal to the iteration count, the loop may terminate. The continued execution of the loop may thus be conditional, depending on the status of the current iteration number relative to the iteration count.
A loop construct coded in a high-level programming language may be translated into instructions of an instruction set architecture (ISA) that may be then executed by a microprocessor or system implementing that ISA. In some such translations, conditional branch instructions defined in the ISA may be used to implement the conditional behavior of loop execution. For example, various instructions may be used to test the value of the current iteration number, and a conditional branch instruction based on the results of the test may be used to branch to the beginning of the loop code sequence for another iteration, if necessary, or to execute code from another location if the loop has terminated.
A given microprocessor implementation may attempt to fetch instructions well in advance of their eventual execution, in order to allow for performance-improving features such as early decoding of instructions and instruction rescheduling or optimization based on run-time data availability, for example. However, a conditional branch instruction may present more than one potential fetch path, depending upon whether the branch is ultimately taken or not taken. Further, conditional branch outcome may not be known until the conditional branch actually executes. In order not to stall instruction fetching until a conditional branch's outcome is known, a microprocessor may implement a branch prediction scheme to predict the outcome of a given conditional branch and then speculatively fetch and execute instructions along the predicted path.
Branch prediction schemes may improve microprocessor performance to the extent that predictions are correct, but incorrect predictions may require that any speculatively executed instruction along the mispredicted path be discarded and the correct instruction path fetched and executed. Thus, branch prediction accuracy may substantially impact overall microprocessor performance. Conditional branches implementing loops may represent a substantial fraction of the total number of conditional branches in a given application program, but existing branch prediction schemes may not accurately predict the behavior of such loop conditional branches, thus potentially limiting overall branch prediction accuracy and microprocessor performance.

Method and apparatus for loop detection utilizing multiple loop counters and a branch promotion scheme


A transparent light emitting element display, comprising: a transparent substrate; at least one light emitting element which is provided on the transparent substrate; and a first common electrode wiring portion, a second common electrode wiring portion, and a signal electrode wiring portion which are provided on the transparent substrate, in which all of the first common electrode wiring portion, the second common electrode wiring portion, and the signal electrode wiring portion comprise metal mesh patterns, respectively, each of the metal mesh patterns, which constitute the first common electrode wiring portion, the second common electrode wiring portion, and the signal electrode wiring portion, has a standard deviation of a line width which is 20% or less, a standard deviation of a pitch which is 10% or less, and a standard deviation of a line height which is 10% or less, and the metal mesh patterns are provided in a region having an area of 80% or more of an overall area on the transparent substrate.

Recently in Korea, various types of scenery lighting as well as gorgeous signboards are created in parks and downtowns through fusion of cutting-edge ICT technologies and cutting-edge LED technologies, thereby providing urban residents with information and spectacles. In particular, a transparent LED display made of a transparent electrode material is configured by applying the LED between glass and glass and has an advantage in that luxurious appearances can be created because no electric wire is visible. For this reason, the transparent LED display is utilized for interior decoration in hotels, department stores, and the like and increases in importance in implementing media facades of outer walls of buildings.
Demands for transparent electrodes, which are transparent, allow electricity to flow therethrough, and thus are used for touch screens or the like, are exponentially increased as smart devices come into wide use, and the most widely used transparent electrode, among the transparent electrodes, is indium tin oxide (ITO) which is oxide of indium and tin. However, the indium, which is a main ingredient of the ITO transparent electrode material, is produced only in some countries such as China, there is a small amount of indium reserves globally, and a large amount of costs are required to produce the indium. In addition, the indium has a high and inconsistent resistance value and thus has a disadvantage in that emitted LED light cannot exhibit desired and constant brightness. For this reason, there is a limitation in that the transparent LED utilizing the ITO cannot be utilized as a high-performance and low-priced transparent electrode material.
The ITO, in fact, has been used as the transparent electrode material with the largest market share, but due to a limitation in terms of economic feasibility, restrictive performance, and the like, researches and technology development, which utilize new materials, are being consistently conducted. There are metal meshes, nanowires (Ag nanowires), carbon nanotubes (CNTs), conductive polymers, graphene, and the like as transparent electrode materials that attract the attention as next-generation materials. Among the materials, the metal mesh is a new material that occupies 85% of the materials substituted for the ITO, and the metal mesh is low in price and has high conductivity, such that the market related to the metal mesh expands in view of utilization.
A transparent LED display, which utilizes the metal mesh, has much better conductivity than a transparent display in the related art, makes it easy to perform maintenance, saves resources, greatly reduces environmental pollution, and has economic feasibility resulting from a reduction in manufacturing costs. In addition, the metal mesh can be widely applied for various purposes and can likely be applied and utilized as a new transparent electrode material for various products.

Transparent light emitting element display


A light-conductive rod element includes a solid rod-shaped body having a side surface extending along a longitudinal rod axis between a first light-input end and a second light-redirecting end. The rod element is fabricated from a material exhibiting a refractive index greater than the refractive index of air in order to facilitate total internal reflection. The light-redirecting end includes at least a first planar face extending along a first plane definable by a first normal that is pitched with respect to the rod axis such that light propagating by total internal reflection between the first and second ends that impinges on the interface defined by the rod-element material and air at the first planar face is redirected by at least one of (i) reflection and (ii) refraction. Refracted components of light exit the rod body through the first planar face and reflected components of light exit the rod body through the side surface. The rod element is selectively coupleable with a handle that facilitates the selective introduction of light into the light-input end and, in combination with the handle, forms a light-delivery tool for delivering light to a region of interest.

1. Field
Although not so limited in its utility or scope, implementations of the present invention are particularly well suited for the selective illumination of regions of interests within a dental patient's mouth or the delivery of light energy to a dental-curing site in a patient's mouth, and, more particularly, to unbent light-transmissive elements adapted for the emission of light energy at any of various predetermined angles relative to the longitudinal axis of the light-conductive element.
2. Brief Description of Illustrative Environments and Related Art
Elongated light-conductive elements are applied to various applications in which remote, difficult-to-access regions require illumination or the delivery of electromagnetic energy for purposes other than illumination (e.g., photochemical curing). One field in which elongated light-conductive elements find use is the dental industry. More specifically, light-conductive elements are used to illuminate remote teeth and gums to facilitate drilling, filling, dental surgery and bleaching. Moreover, various bonding materials used in dentistry are photochemically cured by the delivery of light of an appropriate wavelength to the area to be bonded.
Currently, light-conductive elements exhibiting total internal reflection are used in the dental industry. Some such devices comprise single-element, light-conductive rods, while others comprise fused bundles of plural optical fibers. These devices typically include an elongated body having a first light-input end and a second light-emitting end opposite the light-input end. A typical dentist has a set of light conductive elements, each of which is selectively coupleable with a light-generating base, to accommodate the delivery of electromagnetic energy to different regions of interest within a patient's mouth. Alternative examples of light-generating bases include (i) a handle for retaining a light-conductive element and internally retaining a light-generating element and (ii) a handle that selectively retains a light conductive element and is optically connected to a unit, other than the handle, that houses a light-generating element, wherein the optical connection is provided, for example, through a flexible optical fiber bundle. A generic light-generating base and illustrative light-conductive elements for alternative use therewith are depicted in FIGS. A through Aiv. As shown, the various elements of a set may be characterized by different angles of emission relative to the propagation axis of the input energy. Light emission at various angles is facilitated by bent and/or curved optical rods. Some rods are straight while others may include bends of 30, 45, 60 or 90 degrees, for example. As known to those skilled in the art of optical fiber component manufacturing, for example, the fabrication of bent optical rods is substantially more expensive than the fabrication of straight rods, for instance. The cost of fabricating bent rods of various angles is passed on to the dental professional and, ultimately, the patient or patients' insurers.
A second general type of illumination tool currently used by dental professionals is represented in FIG. B and includes an extension arm having opposed base and distal ends. The base end is selectively connectable to a base that serves as a handle and either includes an internally-contained source of electrical power (e.g., a battery) or is selectively connectable to a source of electrical power external to the base. The distal end of the extension arm includes a light-generating device such as an LED or light bulb and the extension arm houses electrical conduits (e.g., wires) for including the light-generating device in an electrical circuit that can be selectively opened and closed by a switch in the handle to alternatively shut down and illuminate the light-generating device. These types of dental illumination tools require the dental professional to possess variously configured extension arms, each of which extension arms includes its own light-generating device and set of electrodes for coupling with the power-supplying handle. Moreover, although these illumination tools are generally low-power devices, the inclusion of the light-generating device at the distal end of an extension arm necessarily involves introducing a portion of the electrical circuit into a patient's mouth. Accordingly, the extension arm, and the portion of the circuitry contained therein must endure autoclaving procedures after use. Moreover, dental illumination tools in which a single light-generating element is relied upon to alternatively deliver light through any of various conduits, such as the illumination tools of the first type previously discussed, are decidedly advantageous from a maintenance perspective relative to illumination tools of the second type.
Accordingly, there exists a need for less costly elongated, light-conductive elements adaptable for use in dental applications. More specifically, there exists a need for light-conductive elements that can distribute light at various predetermined angles without requiring the fabrication of multiple bent light-conductive elements.

Light conductive rod elements and light-delivery tool including a base for introducing light into a light conductive rod element


A memory cell includes a storage element coupled to a first data node and a second data node, a first programmable nonvolatile element and a second programmable nonvolatile element, a first switch element and a second switch element. The first switch element is configured to couple the first programmable nonvolatile element to the first data node during a first read mode of the memory cell. The second switch element is configured to couple the second programmable nonvolatile element to the second data node during the first read mode.

Electronic systems can be employed in environments having higher reliability requirements than typical industrial applications. For example, some applications require an integrated circuit be "radiation hardened" (rad hard) with respect to ionizing radiation. One such application can be space applications. In many space applications there is an increasing demand for data processing and throughput along with reconfigurability for flexibility. Accordingly, field programmable gate arrays (FPGAs) are enjoying increased use in radiation challenged environments. In such applications, systems require some type of nonvolatile memory to store configuration data for configuring (and if necessary reconfiguring) the FPGA. Further, centralized processing in satellites has placed a higher demand on more capable processors and multitasking, leading to larger non-volatile storage requirements (such as 64 Mbits and higher).
One conventional space system non-volatile memory solution can use commercially screened "flash" electrically erasable read only memory (EEPROM) in combination with synchronous dynamic random access memory (SDRAM), operating as a "shadow" memory, storing data from flash memory for fast access by a processor/programmable logic device. Data stored in nonvolatile devices can include processor boot code and/or configuration data for an FPGA, or the like. A drawback to such conventional approaches is that they can be size, weight and power intensive solutions, all of which are undesirable, particularly in space applications.
A conventional system is shown in FIG. 15 and designated by the general reference character 1500. A system 1500 can include commercially screened NOR type flash integrated circuit (IC) devices 1599-0 to -2, for storing data in a nonvolatile fashion. Such nonvolatile data can be loaded into commercially screened SDRAM devices 1597-0 to -2. Flash devices (1599-0 to -2) can be powered down once data is loaded into the SDRAM devices (1597-0 to -2) for an improved total ionizing dose response.
In the system shown, flash devices (1599-0 to -2) and SDRAMs (1597-0 to -2) have a triple module redundancy (TMR) configuration, replicating data across three devices. An SDRAM voter 1595 can determine a read data value based on data from three different data paths.
Data from SDRAM voter 1595 can be provided to an FPGA 1593 device, and can include configuration data and/or instruction data (for a processing circuit embedded in, or created by programming the FPGA 1593).
Voltage regulators 1591-0/1 can regulate supply voltages to the various devices of the system 1500.
In some conventional systems, system storage can be capable of storing up to several gigabytes of data. One example of a high data storage system is shown in FIG. 16. A system 1600 can include a main memory 1689 and a radiation hardened processor 1687. A main memory 1689 can typically use up-screened commercially available NAND flash devices (1685-0 to -2) employing TMR techniques. Further, a complex error detection and correction (EDAC) circuit 1683 can be included to improve the reliability of data access operations.
A processor 1687 can include a logic unit 1681, registers 1679 and a cache memory 1677. In a conventional system like that of FIG. 16, one estimate places 50% of the memory used (not including logic) in overhead to maintain the aforementioned TMR and EDAC. While total radiation dose issues on commercial devices can be mitigated through shielding, such solutions can also be costly and/or increase weight.
In many high reliability systems, processors can require instruction and data sequences (code) to implement a desired functionality. Such code not only initializes the firmware (Interfaces), but can also provide the correct execution sequence to perform the various tasks desired from the processor system. One example of a conventional high reliability (e.g., rad hard) processor system is shown as 1700 in FIG. 17.
A system 1700 can include a processor subsystem 1773 having a processor 1787 can various other circuits and/or interfaces. The conventional system 1700 of FIG. 17 shows a watch dog timer, general purpose input/outputs (GPIO), serial interfaces (i.e., I2C, UART, SPI), a parallel interface (PCI master), and a parallel memory interface (DDR controller). SPI interface can be connected to two boot EEPROMs 1775-0/1. DDR controller can be connected to SDRAM voter 1795. SDRAM voter 1795 provides data from TMR configured SDRAM devices 1797-0 to -2. EEPROMs (1775-0/1) can be radiation hardened devices that store code for the processor sub-system 1773, and thus can be costly. Further, multiple EEPROM devices are needed since high reliability EEPROM density is can be relatively small (i.e., about ˜20 Mbit) as compared to commercial devices.

This patent is subject to a terminal disclaimer.

High reliability non-volatile static random access memory devices, methods and systems


The present invention provides a process for preparing an allenyl .beta.-lactam compound represented by the formula (II) or a process for preparing a 3-halocephem compound of the formula (III) by altering the reaction conditions with use of a .beta.-lactam halide compound represented by the formula (I) serving as the starting material ##STR1## wherein R.sub.1 is a hydrogen atom, amino or protected amino, R.sub.2 is aryl which may have a substituent, n is 0 to 2, R.sub.3 is a hydrogen atom or carboxylic acid protective group, X is a halogen atom, and Y is a halogen atom or a leaving group ##STR2## wherein R.sub.1, R.sub.2, n and R.sub.3 are as defined above ##STR3## wherein R.sub.1, R.sub.3 and X are as defined above.

The allenyl .beta.-lactam compound of the invention represented by the formula (II) is conventionally prepared, for example, by reacting a tertiary organic base with the starting material in an organic solvent according to the process disclosed in JP-A-282359/1992. However, this compound as contained in the resulting reaction mixture is unstable owing to the presence of an excess of the tertiary organic base or a salt of the base and sulfonic acid, so that the reaction mixture usually requires repetition of a cumbersome procedure involving extraction and concentration after the completion of the reaction. This procedure takes time in the case of quantity production, consequently entailing problems such as a marked reduction in the yield of the isolated product. Thus, a satisfactory feasible process has yet to be developed for preparing the allenyl .beta.-lactam compound.
Reports have been made on widely acceptable processes for preparing 3-halogenated cephem derivatives represented by the formula (III). These processes include a process which uses a 3- hydroxycephem compound represented by the formula (IV) and serving as the starting material and involves conversion of the hydroxyl group to trifluoromesyloxy group and the subsequent reaction with a lithium halide as disclosed in J. Org. Chem., 54, 4962(1989), a process wherein a reactive chlorine or bromine compound (such as phosphorus trichloride, phosphorus oxychloride or thionyl bromide) is reacted with a 3-hydroxycephem compound in dimethylformamide as disclosed in JP-A- 116095/1974, and further a process wherein an alkali metal salt or alkaline earth metal salt of a halogen is reacted with an allenyl .beta.-lactam compound as disclosed in JP-A-282387/1992 ##STR4## wherein R.sub.1 and R.sub.3 are as defined below.
The first of the processes requires the use of the 3-hydroxycephem compound as the starting material which compound itself is difficult to prepared and is therefore in no way practically feasible. The second process inevitably forms 3-sulfonylcephem or 3-thiocephem as a by-product due to the recombination of sulfinate ion or thiolate ion which is released on ring closure, consequently giving the desired 3-halogenated cephem derivative in a yield of as low as up to 70%.
An object of the present invention is to overcome the drawbacks of the foregoing conventional processes and to provide a process capable of readily preparing the desired allenyl .beta.-lactam compound and 3-halogenated cephem compound from the same starting material in a high yield with a high purity merely by using different reaction conditions for the different compounds.

Process for preparation of .beta.-lactam compounds


A conventional semiconductor device used for a power supply circuit such as a DC/DC converter has problems of heat dissipation and downsizing, in particular has the problems of heat dissipation and others in the event of downsizing.

The present invention relates to a semiconductor device, for example to a technology effectively applicable to a semiconductor device used for a power supply circuit.
A DC/DC converter widely used as a power supply circuit includes a high side switch, a low side switch, drivers (drive circuits) to drive the switches, a control circuit to control the drivers, etc. In each of the high side switch and the low side switch, a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is used. Here, a high side switch is also called a control switch and a low side switch is also called a synchronous switch.
In a semiconductor device used for a power supply circuit such as a DC/DC converter, for example the following technologies are proposed with the aim of downsizing and reducing the inductance of a wire.
(1) Japanese Unexamined Patent Publication No. 2005-203584 (Patent Literature 1)
A power MOSFET for a high side switch, a drive circuit to drive the power MOSFET for the high side switch, and a drive circuit to drive a power MOSFET for a low side switch are formed in one semiconductor chip. A power MOSFET for the low side switch is formed in another chip. The two semiconductor chips are contained in one package.
(2) Japanese Unexamined Patent Publication No. 2010-16035 (Patent Literature 2)
A power MOSFET for a high side switch, a power MOSFET for a low side switch, and drivers and control circuits for them are formed over one semiconductor substrate.

Semiconductor device and manufacturing method thereof

Abstract: A semiconductor device has a structure formed by covering a principal surface of a semiconductor chip having the principal surface and a plurality of MIS type FETs formed over the principal surface with a plurality of metal plate wires having pectinate shapes; allocating the pectinate parts alternately in a planar view over the principal surface; and further electrically coupling the plural metal plate wires to a plurality of terminals.


The invention provides integrated Organ-on-Chip microphysiological systems representations of living Organs and support structures for such microphysiological systems.

There is a crucial need for alternatives to animal studies for development of novel pharmaceuticals and countermeasures against biothreats for national defense, as highlighted in a recent study by the National Academy of Sciences (1). Provided herein are different human "Organ-on-a-Chip" systems containing living human cells cultured within microfluidic devices that recapitulate the three-dimensional (3D) tissue-tissue interfaces, mechanically active microenvironments, electrical stimulation, chemical conditions and complex Organ-level functions, for instance, breathing lung, beating heart, metabolic liver, flowing kidney, peristalsing gut, reactive airway, contracting skeletal muscle, skin barrier, blood-brain barrier, reproductive/endocrine testis and self-renewing bone marrow, as well as instrumentation for linking these Organ Chips microfluidically for physiological and pharmacological analysis. These integrated microphysiological systems can shorten the drug development timeline, save animal lives, reduce failure rates, inform regulatory decision-making, and accelerate development of new therapeutics in the face of emerging infectious diseases, as well as chemical or biological attack.

Integrated human organ-on-chip microphysiological systems

PRESIDENT AND FELLOWS OF HARVARD COLLEGE


A piezoelectric resonator has a piezoelectric substrate on obverse and reverse surfaces of which electrodes are disposed. Comb-shaped electrodes consisting of electrode fingers and spaces are disposed around the electrode situated at least on one surface of the piezoelectric substrate and at prescribed space intervals between this electrode and each of those comb-shaped electrodes. This arrangement enables obtaining means for suppressing the occurrence of spurious waves due to an inharmonic mode in the 200-MHz band high-frequency resonator or two-pole monolithic filter.

1. Field of the Invention
The present invention relates to a piezoelectric device. More particularly, the invention concerns a piezoelectric device that in case of a piezoelectric resonator suppresses the occurrence of spurious waves and in case of a two-pole monolithic filter makes the bandwidth larger and suppresses the spurious waves.
2. Description of the Related Art
Piezoelectric devices have been being used in many communication apparatus as electronic devices each of that enables obtaining excellent frequency/temperature characteristics over a wide range of frequency from several tens of kHz to several hundreds of MHz and is small in size and also is solid.
FIGS. 5(a) and 5(b) are a plan view and a sectional view taken along a line Qxe2x80x94Q, which illustrate the construction of an AT cut crystal resonator. Substantially at the centers of the both surfaces of an AT cut crystal substrate 31, (hereinafter referred to as xe2x80x9ca substratexe2x80x9d) there are disposed mutually opposing electrodes 32a and 32b. From these electrodes 32a and 32b there are extended toward the edges of the substrate 31 lead electrodes 33a and 33b.An AT cut crystal resonator element is thereby formed. This crystal resonator element is accommodated within a package (not illustrated), and the lead electrodes 33a and 33b are connected to the terminal electrodes of the package, respectively, using electrically conductive adhesive, etc. A crystal resonator is thereby formed.
Applying a high-frequency voltage across the lead electrodes 33a and 33b of the AT cut crystal resonator illustrated in FIGS. 5(a) and 5(b), two kinds of thickness vibrations are excited. One is a thickness twist mode of vibration that propagates in the Zxe2x80x2-axial direction and the other is a thickness shear mode of vibration that propagates in the X-axial direction. However, in general, these two kinds of modes of vibrations are called xe2x80x9cthe thickness shear modexe2x80x9d of vibration, generically.
While various methods of analyses have been used as those for analyzing the thickness shear mode of oscillation, it is well known that an energy trapping theory has been widely used on account of its brevity.
Assume that various parameters of the crystal resonator be set as illustrated in FIG. 5(c). Namely, assume that H represents the thickness of the substrate; fs represents the cut-off frequency of the substrate; L represents the size of the electrode; and fe represents the cut-off frequency of the electrode part. Then,the resonance frequency fr of the crystal resonator is located between the cut-off frequencies fe and fs as illustrated in FIG. 5(d). According to the energy trapping theory, the energy trapping coefficient P is defined as in the following equation.
P=(xcfx80{square root over ( )}2) xcexcL/H{square root over ( )}xcex94xe2x80x83xe2x80x83(1)
Also, except for the constant (xcfx80{square root over ( )}2), the energy trapping coefficient P is sometimes defined as in the following equation.
Pxe2x80x2=xcexcL/H{square root over ( )}xcex94xe2x80x83xe2x80x83(2)
where xcexc represents the constant that is primarily determined from the elastic constants of the substrate. Accordingly, the mass loading is defined as in the following equation.
xcex94=(fsxe2x88x92fe)fsxe2x80x83xe2x80x83(3)
The energy trapping coefficient is an important parameter for determining up to which vibration mode should be set under the category of the xe2x80x9ctrapped modexe2x80x9d.
For example, the energy trapping coefficient Pxe2x80x2 for which only a primary symmetric mode of the fundamental wave alone is set as the trapped mode is theoretically 2.17 and 2.75, respectively, for the thickness twist mode and for the thickness shear mode. However, actually, the energy trapping coefficient Pxe2x80x2 is not as theoretically. Correcting each of these values experimentally so that the amount of energy confined may become the largest, it is well known that these values should be corrected, respectively, to values of 2.4 and 2.8.
FIGS. 6(a) and 6(b) are a plan view and a sectional view taken along a line Qxe2x80x94Q, which illustrate a two-pole monolithic filter (hereinafter referred to as xe2x80x9ca two-pole monolithic filterxe2x80x9d). On one surface of a substrate 41 there are disposed electrodes 42 and 43 closely to each other, and, an electrode 44 is disposed on the other surface thereof in such a way as to oppose the electrodes 42 and 43. From the electrodes 42, 43, and 44 there are extended toward the edges of the substrate 41 lead electrodes 45, 46, and 47, thereby constructing a two-pole monolithic filter.
Applying a high-frequency voltage to the lead electrodes 45 and 47, as well known, a primary symmetrical mode of and a primary anti-symmetric mode are strongly excited in the electrodes 42, 43, and 44. Utilizing these two modes of oscillation waves, a two-pole monolithic filter is constructed.
Assume that fs represents the cut-off frequency of the substrate 41; and fe represents the cut-off frequency that prevails when having adhered the electrodes 42, 43, and 44 to the substrate 41. Then, the frequencies f1 and f2 of the excited symmetrical primary mode and primary anti-symmetric mode of oscillation waves become spectrum as illustrated in FIG. 6(c). Resultantly, the frequency bandwidth twice as large as that obtained as the difference between the frequencies f1 and f2 becomes a frequency bandwidth of the two-pole monolithic filter.
However, when attempting to design an oscillation device having a high frequency band of 200 MHz as the one for use in a crystal resonator or two-pole monolithic filter, even if using as the electrode materials an aluminum alloy that is light in mass, it is necessary to set the size of the electrodes to be very small in order to satisfy the above-described energy trapping coefficient. As a result, in case of a crystal resonator, there was the problem that the equivalent resistance was excessively high while, in case of a two-pole monolithic filter, there was the problem that the impedance was excessively high. Furthermore, at the time of the manufacture, because the electrode size is excessively small, there was also the problem that mask alignment was very difficult to make.
In order to solve these problems, an attempt has been made to use an entire-surface electrode as the electrode for use on one surface of a high-frequency crystal resonator or high-frequency two-polermonolithic filter. Through making this attempt, a device that has been arranged for mass loading not to contribute to the energy trapping has ever been put to practical use. However, when, for example, setting the electrode configuration on one side of a 200-MHz frequency-band two-pole monolithic filter of the fundamental-wave to be 0.15 mmxc3x970.25 mm, the energy trapping coefficient becomes excessively large. As a result of this, the problem that an inharmonic mode of oscillation waves occurs still remains unsolved.
Also, FIGS. 7(a) and 7(b) are a plan view and a sectional view taken along a line Qxe2x80x94Q, both illustrating the construction of a monolithic crystal filter that is disclosed in Japanese Patent Application Laid-Open No. Hei10-32459. This publication describes a two-pole monolithic filter comprising a substrate 51 and electrodes 52, 53, and 54. It describes that the entire remaining portion of the substrate 51 has disposed thereon electrodes for a suppression 55b, 56a, and 56b in such a way as for these electrodes to be kept at a distance from those electrodes 52, 53, and 54 of the two-pole monolithic filter. And it describes thereby suppressing the occurrence of a higher harmonic mode of oscillation waves such as unnecessary flexible vibration, contour vibration, etc., whereby excellent pass-band characteristics have been obtained.
However, according to the width of the gap between the electrodes 52, 53, and 54 of the two-pole monolithic filter and the electrodes for a suppression 55a, 55b, 56a, and 56b disposed around these electrodes 52, 53, and 54, the respective thickness-values of the electrodes 55a, 55b, 56a, and 56b, etc., it is impossible to sufficiently confine the displacements of the two vibration modes, constituting the two-pole monolithic filter, into the region defined by the electrodes 52, 53, and 54. Resultantly, the oscillatory waves in those two vibration modes are leaked into the environmental electrodes for a suppression 55a, 55b, 56a, and 56b, with the result that there newly arises the problem that the insertion loss of the two-pole monolithic filter becomes deteriorated.
The present invention has been made in order to solve the above-described problems and has an object to provide a high-frequency piezoelectric device that, regarding a desired vibration mode of oscillation waves, enables suppressing the occurrence of an inharmonic mode of waves while keeping the energy trapping coefficient to be at a satisfactory value.
To attain the above object, according to the first aspect of the invention, there is provided a piezoelectric resonator, the piezoelectric resonator having two electrodes disposed on its piezoelectric substrate, one electrode being disposed on an obverse surface of the piezoelectric substrate and the other being disposed on a reverse surface thereof in such a way that these two electrodes are opposed to each other, wherein comb-shaped electrodes each consisting of electrode fingers and spaces are disposed around the electrode located at least on one surface of the piezoelectric substrate at prescribed space intervals between this electrode and each of the, comb-shaped electrodes.
According to the second aspect of the invention, there is provided a two-polemonolithic filter, the two-polemonolithic filter having a piezoelectric substrate that has disposed on one surface thereof a pair of electrodes close to each other and has disposed on the other surface an electrode opposed to these paired electrodes, wherein comb-shaped electrodes are disposed around the electrode located at least on one surface of the piezoelectric substrate at prescribed space intervals between this electrode and each of the comb-shaped electrodes.
According to the third aspect of the invention, there is provided a two-pole monolithic filter as described in the second aspect, wherein a comb-shaped electrode having a plurality of electrode fingers is disposed between the paired electrodes close to each other.
According to the fourth aspect of the invention, there is provided a two-polemonolithic filter, the two-polemonolithic filter having a piezoelectric substrate that has disposed on one surface thereof a pair of electrodes close to each other and has disposed on the other surface an electrode opposed to these paired electrodes, wherein an electrode having a number of holes formed therein is disposed around the paired electrodes situated at least on the one surface of the piezoelectric substrate and at prescribed space intervals between these paired electrodes and that electrode.


A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.

The present disclosure relates to a semiconductor light emitting device.
A light emitting diode contains a light emitting material that emits light using electric energy by converting energy generated due to the recombination of electrons and electron holes into light. Such light emitting diodes are currently in widespread use as lighting elements, display devices, and light sources, and are undergoing rapid development.
In particular, with the commercialization of apparatuses such as cellular phone keypads, turn signal lamps, camera flashes, and the like, gallium nitride (GaN)-based light emitting diodes are undergoing rapid development. Additionally, new uses and applications for GaN-based light emitting diodes are being introduced, including use in general lighting devices. Applications and products using light emitting diodes are further expanding to applications in which high output and high efficiency are needed, such as in large scale TV backlight units, vehicle headlamps, general lighting devices, and the like. Therefore, methods for improving light extraction efficiency of light emitting devices employed for uses such as those described above are needed.

Semiconductor light emitting device including a pad electrode spaced apart from a transparent electrode


A method of assembling a terminal assembly includes a terminal and a terminal insert. The terminal insert may be configured to be disposed at least partially in the terminal; the terminal and the terminal insert may be configured to receive at least a portion of a wire; and/or the terminal and the terminal insert may be configured to be crimped to the said wire. The terminal insert may include a first insert wing, a second insert wing a third insert wing, and/or a fourth insert wing. The terminal may include a first wing, a second wing, a third wing, and/or a fourth wing. The first wing of the terminal may be disposed proximate the first wing of the terminal insert and/or the second wing of the terminal may be disposed proximate the second wing of the terminal insert.

This background description is set forth below for the purpose of providing context only. Therefore, any aspect of this background description, to the extent that it does not otherwise qualify as prior art, is neither expressly nor impliedly admitted as prior art against the instant disclosure.
Some terminal assemblies may be relatively complex to use and/or to assemble. For example, connecting a terminal with some electrical conductors may involve a complex process and may include many different steps and components. Some terminals may not be configured for use with conductors of different sizes, so different types of terminals may be used for various sizes of conductors.
There is a desire for solutions/options that minimize or eliminate one or more challenges or shortcomings of terminals, electrical terminals, and/or terminal assemblies. The foregoing discussion is intended only to illustrate examples of the present field and should not be taken as a disavowal of scope.


In a driver circuit of a display device, an electric potential difference between high-level power supply voltage VDD and low-level power supply voltage VSS2 in shift registers and buffers is set smaller than an electric potential difference between high-level voltage VDD and low-level voltage VSS of enable signals OE in order to prevent increase in voltage stress on each transistor and concurrently to make larger an electric potential difference between high-level voltage and low-level voltage of output signals.

1. Field of the Invention
The present invention relates to a driver circuit for driving scan lines or signal lines in a display device.
2. Description of the Related Art
Plane display devices, typified by liquid crystal display devices, feature thinness, light weight, and low power consumption, and accordingly are in use for displays of various types of electric appliances. Out of the plane display devices, active-matrix liquid crystal display devices with a transistor arranged in each pixel have been increasingly in use for note personal computers and portable information terminal devices. Recently, a technique has been established, which forms polysilicon thin film transistors (p-Si TFTs) with high electron mobility by means of a process to be performed at a temperature relatively lower than that which is applied in order to form amorphous silicon thin film transistors, which have been in use for conventional liquid crystal display devices. This establishment has made it possible to fabricate transistors in a smaller size, which are in use for liquid crystal display devices. This has made it possible to integrally form a pixel part and driver circuits on a transparent glass substrate through a single manufacturing process: the pixel part is configured by arranging a transistor at an intersection between each of a plurality of scan lines and its corresponding one of a plurality of signal lines, and the driver circuits respectively drive a group of scan lines and a group of signal lines.
In addition, as disclosed in Japanese Patent Laid-open No. 2003-344873, development has been in progress for a bootstrap circuit for the purpose of setting electric potential for output signals from a driver circuit at a sufficient level.
An electric potential difference between the high-level voltage and the low-level voltage of output signals from a driver circuit is used in order for the output signals from the driver circuit to control the writing of video signals into each pixel. For this reason, from the viewpoint of enabling the writing to be stable, it is desirable that the electric potential difference be as large as possible. However, a larger electric potential difference between the high-level voltage and the low-level voltage means a higher voltage stress being on the transistors. This is likely to reduce reliability in operation of each of the transistors that constitute the driver circuits. Furthermore, the larger electric potential difference leads driving the driver circuits at a higher voltage. This brings about a problem of requiring larger power consumption.

Toshiba Matsushita Display Technology Co., Ltd.


An object of the present disclosure is to provide an all solid fluoride ion battery that has a favorable capacity property. The present disclosure achieves the object by providing an all solid fluoride ion battery comprising: a cathode layer, an anode layer, and a solid electrolyte layer formed between the cathode layer and the anode layer; wherein the anode layer includes a metal fluoride containing an M1 element, an M2 element, and a F element; the M1 element is a metal element that fluorination and defluorination occur at a potential, versus Pb/PbF2, of −2.5 V or more; the M2 element is a metal element that neither fluorination nor defluorination occur at a potential, versus Pb/PbF2, of −2.5 V or more; and the M2 element is a metal element that, when in a form of a fluoride, fluoride ion conductivity is 1×10−4 S/cm or more at 200° C.

As high-voltage and high-energy density batteries, for example, Li ion batteries are known. The Li ion battery is a cation-based battery utilizing: the reaction between a Li ion and a cathode active material; and the reaction between a Li ion and an anode active material. Meanwhile, as anion-based batteries, all solid fluoride ion batteries utilizing the reaction of a fluoride ion are known.
For example, Non-patent Literature 1 discloses an all solid fluoride ion battery comprising an anode using an anode mixture in which an active material (such as BiF3 and CuF2), a solid electrolyte, and an electron conductive material are mixed. For example, Non-patent Literature 1 discloses an anode mixture in which La0.9Ba0.1F2.9 as a solid electrolyte and acetylene black as an electron conductive material are mixed with BiF3. Also, for example, Patent Literature 1 discloses a technique of adding polymer or glass that inhibits destruction of a battery due to the expansion and contraction of an electrode, to at least one of a cathode, a solid electrolyte, and an anode of an all solid fluoride ion battery.


A double-balanced mixer which includes four diodes effectively connected to each other in a bridge connection on a substrate. The four diodes are formed into two sets of diodes, each one set including two of the four diodes connected to the same input line, with two twin-diodes each including two of the four diodes formed on the same semi-conductor chips being used for the two sets of the diodes.

The present invention generally relates to an electrical mixer and more particularly, to a double-balanced mixer for use, for example,, in a CATV (cable television) tuner or the like.
In FIG. 4, there is shown one example of a conventional double-balanced mixer of the above type which includes four diodes 11, 12, 13 and 14 connected effectively in a bridge connection between a transmission line transformer 22 as a phase distributor and phase distributors 31 and 32 composed of coils and capacitors, with input and output transmission line transformers 21 and 23 being provided if needed.
High frequency signals RF supplied to a terminal 41 are subjected to frequency conversion by the transmission line transformer 22, the diodes 11 to 14 and the phase distributors 31 and 32, based on a local oscillator signal LO fed to a terminal 42, and thus, intermediate signals IF are outputted from another terminal 43.
The characteristics of the diodes 11, 12, 13 and 14 may be represented by X1, X2, X3 and X4 (such characteristics mainly being related to the capacitance across its terminals and the forward direction voltage-current characteristics) and should be in a relationship as in EQU X1=X2=X3=X4
in order to maintain a balancing of the circuit, and therefore, it has been a conventional practice to select diodes having uniform characteristics from among many diodes so as to use four diodes as one set, thus requiring a troublesome procedure for the selection of diodes.
Moreover, when the respective diodes 11 to 14 are to be actually attached onto a printed circuit board 50, in order to maintain, the balanced inductance thereof by making the length of lead wires of the respective diodes 11 to 14 equal, it is necessary to dispose one of the intersecting diodes (the diode 12 in the drawing) on a reverse surface of the printed circuit board 50 as shown in FIGS. 5(A) and 5(B), and thus, more labor is required for the attaching and soldering of the diodes to be mounted on both surfaces of the circuit board 50.
Furthermore, in the case where the diodes 11 to 14 are to be attached onto both surfaces of the printed circuit board as described above, soldering thereof must be effected two times separately for the front and reverse surfaces of the printed circuit board 50, and at this time, since the selected four diodes are required to be used for one set as described earlier, management of diodes has been necessary so that one set of diodes is not confused with another set of diodes during the two soldering operations, thus also requiring a troublesome procedure therefor.


Provided is a method of forming reference information for defining a fault pattern of equipment, and monitoring equipment. One example embodiment method may include performing an angle spectrum analysis by re-classifying fault points distributed on a plane, the plane including a first component axis and a second component axis, and the re-classifying fault points including calculating an angle for each of the fault points with reference to any one of the first component axis and the second component axis of the plane, and forming a reference fault pattern for defining a fault pattern of the re-classified fault points.

1. Field
Example embodiments of the present invention may relate to a method of monitoring equipment and, more particularly, to a method of forming standard information for defining a fault pattern of semiconductor manufacturing equipment and a method of monitoring semiconductor manufacturing equipment using the same.
2. Description of Related Art
Generally, a semiconductor device is manufactured by repeatedly and selectively performing a plurality of processes such as diffusion, deposition, exposure, etching, cleaning, etc. on a wafer. Semiconductor manufacturing equipment is used to perform each process.
The semiconductor manufacturing equipment for performing each process may generate a fault (e.g., error) while performing the process. Throughout the specification the term "fault" may be interchangeably used with "error." When a fault is detected, the equipment may transmit fault data to a controller, which may display the fault state or the controller may generate an alarm. Accordingly, an operator may be notified of the fault and may correct the fault.
In a conventional fault monitoring method, faults generally detected by the monitoring method are divided into a plurality of fault groups, each of which has similar fault states.
The conventional monitoring method includes two steps, e.g., (1) a process of extracting fault patterns due to faults and storing the extracted fault pattern in a database, and (2) a process of recognizing the fault pattern.
FIG. 1 is a graph illustrating a conventional method of determining a fault pattern.
Referring to FIG. 1, FAULTS I to IV are fault pattern regions extracted in an offline state and distributed on a plane. Here, "plane" may mean a 2-D graphical representation. These fault regions are formed on the basis of received fault data from previously operated semiconductor manufacturing equipment. The fault pattern region information may be stored in a database.
The fault pattern generated by semiconductor manufacturing equipment may be recognized as follows. As shown in FIG. 1, when received (detected) data deviates from a normal management region, an operator determines whether the detected data is similar to fault pattern regions I to IV stored in the database. The similarity is determined based on a statistical distance between the received data and the fault pattern regions I to IV. Therefore, as the statistical distance increases between the received data and the fault pattern regions I to IV, similarity between the received data and the fault pattern region I to IV decreases.
However, when the received data is within any one boundary of the fault pattern regions I to IV, the operator determines that the fault of the received data corresponds to that fault pattern region. When the received data is not within any boundary of the fault pattern regions I to IV, the operator determines that a new fault may have been generated. At this point, the operator may take the semiconductor manufacturing equipment offline, and input a pattern for the new fault to the database. In the conventional monitoring method, because the new fault pattern is determined based on the statistical distance, there is a transition time for determining the new fault pattern.
In addition, determining whether any data received (detected) from the semiconductor manufacturing equipment is accurately included in any one of the fault pattern regions I to IV is difficult. Also, the determination through the proximity of the statistical distance may cause inaccurate definition of the fault pattern of the received data. Therefore, an operator who receives inaccurate defined fault patterns may perform the wrong correction on the semiconductor manufacturing equipment. For example, if a fault is incorrectly determined to have been caused by heat, increasing/decreasing the heat may cause further damage to a semiconductor device when the fault was really caused by lack of oxygen.

Method of defining fault pattern of equipment and method of monitoring equipment using the same


There is provided by the present invention coating formulations and thermal transfer media that form printed images which are readable by magnetic ink character recognition (MICR) devices. These formulations and ribbons employ wax, binder resin and an organic molecule-based magnet. MICR readable printed images obtained therefrom are also provided as is a thermal printer which employs the ribbon.

Thermal transfer printing has displaced impact printing in many applications due to advantages such as the relatively low noise levels which are attained during the printing operation. Thermal transfer printing is widely used in special applications such as in the printing of machine readable bar codes and magnetic alpha-numeric characters. The thermal transfer process provides great flexibility in generating images and allows for broad variations in style, size and color of the printed image. Representative documentation in the area of thermal transfer formulations and thermal transfer media used in thermal transfer printing includes the following patents.
U.S. Pat. No. 3,663,278, issued to J. H. Blose et al. on May 16, 1972, discloses a thermal transfer medium having a coating composition of cellulosic polymer, thermoplastic resin, plasticizer and a "sensible" material such as a dye or pigment.
U.S. Pat. No. 4,315,643, issued to Y. Tokunaga et al. on Feb. 16, 1982, discloses a thermal transfer element comprising a foundation, a color developing layer and a hot melt ink layer. The ink layer includes heat conductive material and a solid wax as a binder material.
U.S. Pat. No. 4,403,224, issued to R. C. Winowski on Sep. 6, 1983, discloses a surface recording layer comprising a resin binder, a pigment dispersed in the binder, and a smudge inhibitor incorporated into and dispersed throughout the surface recording layer, or applied to the surface recording layer as a separate coating.
U.S. Pat. No. 4,463,034, issued to Y. Tokunaga et al. on Jul. 31, 1984, discloses a heat-sensitive magnetic transfer element having a hot melt or a solvent coating.
U.S. Pat. No. 4,628,000, issued to S. G. Talvalkar et al. on Dec. 9, 1986, discloses a thermal transfer formulation that includes an adhesive-plasticizer or sucrose benzoate transfer agent and a coloring material or pigment.
U.S. Pat. No. 4,687,701, issued to K. Knirsch et al. on Aug. 18, 1987, discloses a heat sensitive inked element using a blend of thermoplastic resins and waxes.
U.S. Pat. No. 4,698,268, issued to S. Ueyama on Oct. 6, 1987, discloses a heat resistant substrate and a heat-sensitive transferring ink layer. An overcoat layer may be formed on the ink layer.
U.S. Pat. No. 4,707,395, issued to S. Ueyama et al., on Nov. 17, 1987, discloses a substrate, a heat-sensitive releasing layer, a coloring agent layer, and a heat-sensitive cohesive layer.
U.S. Pat. No. 4,777,079, issued to M. Nagamoto et al. on Oct. 11, 1988, discloses an image transfer type thermosensitive recording medium using thermosoftening resins and a coloring agent.
U.S. Pat. No. 4,923,749, issued to Talvalkar on May 8, 1990, discloses a thermal transfer ribbon which comprises two layers, a thermal sensitive layer and a protective layer, both of which are water based.
U.S. Pat. No. 4,988,563, issued to Wehr on Jan. 29, 1991, discloses a thermal transfer ribbon having a thermal sensitive coating and a protective coating. The protective coating is a wax-copolymer mixture which reduces ribbon offset.
U.S. Pat. Nos. 5,128,308 and 5,248,652, issued to Talvalkar, each disclose a thermal transfer ribbon having a reactive dye which generates color when exposed to heat from a thermal transfer printer.
And, U.S. Pat. No. 5,240,781, issued to Obatta et al., discloses an ink ribbon for thermal transfer printers having a thermal transfer layer comprising a wax-like substance as a main component and a thermoplastic binder adhesive layer having a film forming property.
As demonstrated by the above patents, the selection of thermal transfer ribbons and formulations is diverse as are their end uses.
Thermal transfer printing has been widely used in printing characters for magnetic ink character recognition (MICR). Representative documentation in this area includes U.S. Pat. No. 5,041,331, issued to Glavin et al. on Aug. 20, 1991. U.S. Pat. No. 5,041,331 describes a thermal transfer ribbon with a functional layer with from 10 to 30 parts by weight magnetic metal oxide so that the resulting print will provide the desired level of signal transmission for machine scanning. While thermal transfer formulations and ribbons for MICR printing are known, inorganic metal oxide magnets are used to provide the necessary signal transmission for machine scanning. These inorganic metal oxides place limitations on the ribbon formulations and printed material produced. For example, the print obtained will always be opaque since the inorganic metal oxides are opaque. It is desirable to provide thermal transfer formulations, thermal transfer ribbons and MICR recognizable images which are not dependent on the use of inorganic metal oxides as magnets.
It is also desirable to provide coating formulations, thermal transfer media and MICR recognizable images which utilize unique magnetic pigments.
Organic molecule-based magnets are unique and have been disclosed in "Designer Magnets", Chemical & Engineering News, pp. 30-41, Oct. 2, 1995. Saturation magnetization values for organic molecule-based magnets have been reported as high as 21/2 times that of iron on a mole or metal-atom basis; however, the organic molecule-based magnets have a much lower density and higher molecular mass than iron. Therefore, the saturation magnetization of these materials on a mass or volume basis is far less than conventional magnets. Despite the lower saturation magnetization values, these compounds have received attention because their magnetic properties can be modulated by flexible organic syntheses and, because they are largely non-metallic, some have properties such as transparency and insulating behavior.
Examples include:
a) FeCp.sub.2 !.sup..multidot.+ TCNE!.sup..multidot., where PA1 Cp=pentamethylcyclopentadienide (C.sub.5 (CH.sub.3).sub.5) PA1 TCNE=tetracyanoethylene (NC).sub.2 C =C(CN).sub.2 PA1 b) 4-nitrophenylnitronyl nitroxide PA1 c) 1,3,5,7-tetramethyl-2,6-diazaadamantane-N,N'-dioxyl PA1 d) FeCp.sub.2 !.sup..multidot.4 TCNE!.sup..multidot. PA1 e) FeCp.sub.2 !.sup..multidot.4 TCNQ!.sup..multidot. PA1 f) MnCp.sub.2 !.sup..multidot.4 TCNE!.sup..multidot. PA1 g) FeCp.sub.2 !.sup..multidot.+ TCNE!.sup..multidot. PA1 h) Mn.sup.III TPP!.sup.+ TCNE!.sup..multidot. PA1 i) (CrCp.sub.2).sup..multidot.4 TCNE!.sup..multidot. PA1 TPP=meso-tetraphenyl porphyrin PA1 j) V(TCNE).sub.2 1/2CH.sub.2 Cl.sub.2 (obtained by reacting V(C.sub.6 H.sub.6).sub.2 or V(CO).sub.6 and TCNE.

Magnetic thermal transfer ribbon with non-metallic magnets


The present application relates to a film mask including: a transparent substrate; a darkened light-shielding pattern layer provided on the transparent substrate; and a release force enhancement layer provided on the darkened light-shielding pattern layer and having surface energy of 30 dynes/cm or less, a method for manufacturing the same, and a method for forming a pattern using the film mask.

A general photolithography technology is based on a flat panel such as a wafer or glass. Accordingly, the process capability is greatly affected by stiffness and flatness of a substrate, and the like. However, a market demand for a flexible substrate which may be used in flexible displays and devices has been gradually increased, and accordingly, the change in process is also continuously required.
However, since an existing flat panel-type photomask has a limitation in being combined with a flexible substrate such as a film substrate in order to apply a roll-to-roll process, a need for a flexible photomask having a high resolution is continuously increasing.
In the case of a general film mask, as a pattern implementation layer which satisfies all of light blocking layer characteristics, anti-reflection layer characteristics, and the like that a mask basically has, Ag halide is usually used. However, a Ag halide material has a limitation in ability to implement a pattern. Further, the Ag halide material has various problems with implementing a high resolution due to irregularities and the like of a surface protective layer applied in order to protect a gelatin layer simultaneously used with Ag halide from chemicals. When an existing Ag halide-based film mask is used, a high resolution is highly likely to exhibit a scan mura during the manufacture of a mask, and a problem with the shape of an implemented pattern occurs. When a mask, in which a scan mura occurs, is used, the scan mura is reflected in the product, and there is a problem in that different pattern shapes occur at each defective position due to the scan mura, so that it is impossible to implement a fixed fine pattern having a line width of 15 μm or less.
Therefore, there is a need for developing a film mask using a new material in order to overcome the problem.

Film mask, method for manufacturing same, and method for forming pattern using film mask