A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.

Thin film semiconductor structures have recently found increasing popularity in industries requiring large active area semiconductor devices, such as the terrestrial photovoltaic, light emitting panel, and liquid crystal display driver fields. All of the above fields may incorporate devices having a photovoltaic cell type structure that generates a photovoltaic effect by generating voltage in response to absorbed light energy.
A typical photovoltaic (PV) cell includes a substrate layer for mounting the cell and two ohmic contacts or conductors for passing current to an external electrical circuit. The cell also includes an individual multi-layer semiconductor cell or several semiconductor cells connected in series. The cells operate by having readily excitable electrons that can be energized by solar energy to higher energy levels, thereby creating positively charged holes and negatively charged electrons at the interface of various semiconductor layers. The creation of these positive and negative charge carriers applies a net voltage across a base electrode layer and a top electrode layer positioned on either side of the semiconductor layer of the PV cell, which can force a current of electricity when the device is connected to a proper electric circuit.
The application of semiconductor devices in industries such as those mentioned above has created a need for semiconductor devices having active area requirements extending up to approximately one square meter. Due to these size requirements, the use of polycrystalline or amorphous thin film semiconductor material layers has become increasingly popular in semiconductor device design, as opposed to known crystalline semiconductor structures, which are both limited in size and expensive to manufacture. However, inherent in such polycrystalline or amorphous thin film layer semiconductor device configurations is the presence of various structural nonuniformities. Where a PV cell structure is used, these structural nonuniformities can cause lateral fluctuations in the electric potential at the surfaces of the various layers of the PV device (areas of low electric resistance are often referred to as shunts) as well as cause forward current leakage paths (often referred to as weak diodes). The structural nonuniformities can result from either defects within various semiconductor layers of the device or from morphological irregularities in the deposition surface of the substrate material. These defects lead to an overall decrease in the efficiency of the semiconductor device.
In order to minimize the negative impact such structural nonuniformities have on the performance of a PV device, there are a number of known treatment or minimization methods that effectively disable the semiconductor defect regions by destroying or isolating the corresponding defect region present in one of the electrode layers of the PV device. For example, U.S. Pat. No. 5,084,400 to Nath et al. discloses a method of using an activated conversion reagent to alter the physical properties of a top metal electrode layer to make highly resistive the areas of the top metal electrode layer surrounding low resistance current paths of the PV device caused by the surface nonuniformities of the semiconductor layer. Another known method, disclosed by U.S. Pat. No. 4,385,971 to Swartz, involves electrolytically etching or removing the corresponding top metal electrode material surrounding the semiconductor nonuniformity regions. Japanese Patent 60085576 to Fuse discloses a method of anodizing areas of a base metal electrode layer exposed through defects in the semiconductor layer to a non-conductive state prior to the application of the top electrode layer to prevent short circuit paths in the PV cell.
Another known method for minimizing the effects of nonuniformities in PV cells is the application of a barrier layer over a semiconductor surface containing surface nonuniformities. The application of such a barrier layer blocks the undesired electrical contact with the defect areas and minimizes electrical path failures to improve the overall operating efficiency of the PV cell. For example, U.S. Pat. No. 4,598,306 to Nath et al. discloses a continuous transparent barrier layer disposed between the semiconductor region and one of the electrode layers of the PV device. The barrier layer is disposed across the entire surface of the semiconductor and is formed from a specific group of materials designed to increase the resistivity of shunt (low resistance) regions on the semiconductor surface, which limits the flow of current through the short circuit current path of the shunt.
Even in light of the known methods for minimizing the effects of structural nonuniformities in PV cells utilizing thin-film semiconductor devices, there remains a continuing need for a more efficient, less expensive, and longer lasting thin-film semiconductor device. Thus, it would be advantageous to develop an improved method for treating structural nonuniformities in semiconductor devices that modifies the electric potential of localized defect areas within the semiconductor device to create a more uniform distribution of the electric potential generated by the semiconductor device.

Photovoltaic healing of non-uniformities in semiconductor devices


Techniques for verifying identity of a human subject to an identification document are described. In some examples, a computing device may be connected to least two cameras oriented such that a first field of view is a substantially opposite direction from a second field of view. The device may receive images from the first camera that include a human subject. Second images from the second camera may include images of an ID document with a photograph of the human subject. The device may process the first images along with the respective, corresponding second images to determine respective 3D locations for at least one of cameras at the respective times the images were captured. Based on the sequence of 3D locations, along with the first images and the second images, the device may determine whether the human subject is a valid human subject.

The 3D structure of objects may be estimated based on a plurality of images of the object. Some examples may include stereoscopic images of an object from two or more cameras or from the same camera placed in two or more locations. Other examples may include estimating the 3D structure of a tooth for making a crown using multiple images from a camera and developing 3D models for 3D printers or computer numeric control (CNC) tools. 3D structure may apply to identity verification. Verification of identity by a human may involve verifying that a human subject matches an identification (ID) document. The human verifier may consult the ID document for information about the human subject, such as physical height and weight, hair and eye color, and match a photograph on the ID document to the human subject. ID verification by automated means, such as using a camera, may be spoofed, for example, by holding up a photograph, wearing a mask or holding up a mannequin head that matches the ID document photo. Also, ID documents may be fraudulent.

3D dynamic structure estimation using synchronized images


The present invention is directed to a cell encapsulation device that permits rapid and straightforward cell transfer into the device. The preferred device includes components that allow a user to quickly transfer cells into the device with minimal risk to the cells. Among the most important improvements of the present invention are: automatic filtration of excess solution during cell transfer; an instantly wettable cover, allowing ready view into the cell chamber; and a swellable core, allowing cells to be transferred with minimal shear force while assuring optimal cell placement in the device during use. The device of the present invention may be used either in vivo, such as to deliver therapeutic substances, or in vitro, such as to serve as a bioreactor.

Various cell encapsulation devices have been disclosed over the years. The devices are often used to provide therapeutical substances to a recipient or as bioreactors. These devices commonly comprise one of two forms: microencapsulation devices or macroencapsulation devices.
In a microencapsulation device, small quantities of cells are usually suspended in a droplet and enclosed in a semi-permeable membrane. The semi-permeable membrane allows nutrients, waste products, and therapeutic agents, for example, to diffuse across the membrane, while preventing cells and antibodies, for example, from migrating across the membrane. In order to provide enough cells to effect the desired result, microencapsulation devices are usually used in large numbers.
One common limitation of microencapsulation devices is instability of the microcapsule membrane once implanted in a recipient or placed in a bioreactor. Such instability often leads to cell death or inconsistent release of therapeutic agents. As a result, more than one administration of the microcapsules may be required.
A further limitation with many such devices is the possibility of an immunogenic reaction by a recipient to the composition used to make the semi-permeable membrane of the device. This can lead to serious illness in a recipient and/or damage to the device.
Still another limitation is the difficulty of retrieving the microcapsules from either a recipient or a bioreactor.
Representative examples of microencapsulation devices include, but are not limited to, U.S. Pat. Nos. 5,182,111, 5,283,187, and 5,389,535, all issued to Aebischer et al., U.S. Pat. Nos. 4,487,758, 4,673,566, 4,689,293, 4,806,355, and 4,897,758, each issued to Goosen et al., U.S. Pat. No. 4,803,168, issued to Jarvis, Jr., U.S. Pat. Nos. 4,352,883 and 4,391,909, both issued to Lim, U.S. Pat. No. 4,298,002, issued to Ronel et al., and U.S. Pat. No. 4,353,888, issued to Sefton.
In a macroencapsulation device, larger numbers of cells are enclosed in a chamber of some type. These devices have at least one semi-permeable membrane to allow the necessary flow of fluids while safely retaining the cells. Representative examples of macroencapsulation devices include, but are not limited to, U.S. Pat. No. 5,262,055, issued to Bae et al., U.S. Pat. No. 4,911,717, issued to Gaskill, III, U.S. Pat. No. 4,298,002, issued to Ronel et al., U.S. Pat. No. 5,387,237, issued to Fournier et al., PCT/AU90/00281, filed by Baxter International, Inc., U.S. Pat. No. 5,413,471, issued to Brauker et al., U.S. Pat. No. 5,344,454, issued to Clarke et al., U.S. Pat. No. 5,002,661, issued to Chick et al., and PCT/US94/07190, filed by W.L. Gore & Associates, Inc.
Of particular interest is the macroencapsulation device disclosed in PCT/US94/07190, filed by W.L. Gore & Associates, Inc., which is incorporated herein by reference (hereinafter "Gore device"). The Gore device is preferably a cell encapsulation device that is generally cylindrical in geometry with a flexible cell-displacing core enclosed in a selectively permeable membrane. The selectively permeable membrane contains cells within the device while permitting exchange of biochemical substances between the encapsulated cells and the exterior surface of the device. In a situation where the cell encapsulation device is embedded in a recipient and contains allogeneic or xenogeneic cells, the selectively permeable membrane also serves to isolate the encapsulated cells from the immune system of the recipient. The selective permeability of the membrane can be adjusted by impregnating the membrane with an appropriate hydrogel material. The cell displacing core positions the encapsulated cells near the selectively permeable membrane. In this way, the core positions the encapsulated cells in the device at a distance from a nutrient source and at a cell density that minimizes the diffusion distance biochemical substances must traverse between each encapsulated cell and the external environment of the device. This configuration enables a maximum number of encapsulated cells to be maintained in a given volume at high levels of viability and productivity. During assembly of the device, cells are introduced into the device as a suspension through an open end of the device. The open end is then sealed.
In the biotechnology and pharmaceutical industries, for example, there is a need to quickly and easily screen putative therapeutic agents produced by cells for toxicity, bioactivity, and efficacy, and other factors. Conventional techniques for screening therapeutic agents produced by cells include culturing the cells in vitro until sufficient quantities of cells are obtained to produce enough of the therapeutic agent for screening. Once the desired population of cells is established, the cells are allowed to secrete their products into the culture medium until sufficient amounts of the therapeutic agent are produced. The culture medium containing the putative therapeutic agent is then separated from the cells and concentrated, if necessary. The putative therapeutic agent is usually purified from the culture medium before screening. The purified agent is then screened in vitro and/or in vivo. This is often a laborious, expensive, and time consuming process.
A device and method that eliminates some of the steps of conventional screening techniques would be useful. Though the Gore device, supra, is particularly suited for this type of screening, further improvements are believed possible in the device.
One method to eliminate some steps in screening putative therapeutic agents would be to implant a cell encapsulation device of the present invention, containing cells that produce the putative therapeutic agent, into a test subject.
Once the cell encapsulation device is implanted in a test subject, the putative therapeutic agent would be delivered to the subject directly, eliminating the need to separate the cells from a culture medium and to concentrate, purify, and deliver the agent. Various assays for the putative agent could be performed on the test subject or on samples taken from the subject in order to evaluate the therapeutic agent.
In the field of gene therapy, for example, one method to effect a desired therapy is to harvest certain cells from a patient or donor and genetically manipulate the cells ex vivo to express a desired gene product. The gene product is often a substance needed by the patient, but not produced, or improperly produced, by the patient's own cells. Once the cells have been genetically engineered to produce the desired gene product, the cells are introduced directly into the patient with the intent that the cells will survive in the patient and produce the gene product in amounts and for a length of time sufficient to correct or ameliorate the gene product deficiency in the patient. Since the genetically engineered cells are introduced directly into the patient, the cells are essentially free to move and migrate throughout the patient's body. This is a serious concern because the genetically engineered cells are often transformed and contain oncogenes. The presence of such motile transformed cells in a patient often presents an unacceptable safety risk to the patient.
An implantable cell encapsulation device that prevents genetically engineered cells from contacting a patient's cells and migrating through the patient's tissues while delivering a therapeutic gene product to the patient from the encapsulated cells would be useful in the field of gene therapy.


There is provided a laser processing method of forming via holes 23 and 24 by removing processed layers including a flexible insulating base member 1, in which conformal masks 7 and 8a are provided on the surface, and an adhesive layer 12 having a higher absorbance in a wavelength area of processing laser and a lower decomposition temperature than the insulating base member 1, the method including radiating one shot of pulse light having a first energy density that can remove the insulating base member 1 by one shot without causing the deformation and penetration of a conducting film 2A, and subsequently radiating pulse light having a second energy density that is lower than the first energy density and can remove the rest of the processed layers by a predetermined number of shots without causing the deformation and penetration of the conducting film 2A.

1. Field of the Invention
The present invention relates to a laser processing method and a production method of multilayer flexible printed wiring board using the laser processing method. Particularly, the present invention relates to a laser processing method of forming a via hole by removing multiple materials of different workability and a production method of multilayer flexible printed wiring board using the laser processing method.
2. Background Art
In recent years, as electronic devices are downsized and have higher functionality, there has been a growing demand for an increased density with respect to a printed wiring board. To realize a printed wiring board capable of high-density packaging, a buildup printed wiring board is used. Such buildup multilayer flexible printed wiring board is generally formed by using either a double-sided printed wiring board or a multilayer printed wiring board as a core board and providing one or two buildup layers on both surfaces or one surface of this core board.
Further, to increase the package density of the printed wiring board, a via is provided on the buildup printed wiring board for interlayer connection. The via is an interlayer conduction path including a plated layer formed on the internal wall of a via hole.
Types of via type include a skip via and a step via, in addition to a normal via (hereinafter referred to as "simple via") connecting wiring patterns of two adjacent layers. The skip via is formed by plating the internal wall of a skip via hole. The step via is formed by plating the internal wall of a step via hole (i.e. stepwise via hole) in which the diameter becomes smaller in a deeper internal layer of the printed wiring board (for example, see Patent Literature 1).
When first, second and third wiring patterns are formed in this order through the intermediary of an insulating film in the thickness direction of the multilayer flexible printed wiring board, the skip via skips the second wiring pattern and electrically connects the first wiring pattern and the third wiring pattern. Meanwhile, the step via enables high-density interlayer connection by collective interlayer connection of the first, second and third wiring patterns.
The via hole can be formed by a conformal laser processing method of using a mask hole (i.e. conformal mask) provided on a conductive film on a processed layer and removing a processed layer exposed in this mask hole by laser light.
However, in the related art, when the processed layer is formed of multiple materials of different workability, for example, since a resin remains in the via hole, it is difficult to form a via of high reliability. This problem will be explained in more detail with reference to the drawings.
FIG. 3A and FIG. 3B are process cross-sectional views illustrating a production method of a multilayer flexible printed wiring board in the related art.
(1) First, there is prepared a double-sided copper-clad laminate having copper foils 152 and 153 on the both surfaces of a flexible insulating base member 151 formed of a polyimide film. By processing these copper foils on the both surfaces of this double-sided copper-clad laminate into a predetermined pattern by a photofabrication method, a circuit base material 156 illustrated in FIG. 3A(1) is acquired.
Mask holes 154a, 154b and 154c are formed on the copper foil 152 on the top surface of this circuit base material 156. Also, an internal layer circuit pattern 155 including a mask hole 154d is formed on the copper foil 153 on the back surface of the circuit base material 156.
(2) Next, there is prepared a coverlay 159 in which an adhesive layer 158 (having a thickness of 15 μm)) formed of an acrylic or epoxy adhesive is formed on a polyimide film 157 having a thickness of 12 μm. Subsequently, for example, using a vacuum press or vacuum laminator, the coverlay 159 is attached to the back surface of the circuit base material 156.
Through the above process, a coverlay-attached circuit base material 160 illustrated in FIG. 3A(2) is acquired.
(3) Next, a circuit base material 166 is acquired by performing the same process as in above process (1) using another double-sided copper-clad laminate having copper foils 162 and 163 on the both surfaces of a flexible insulating base member 161. As illustrated in FIG. 3A(3), the copper foil 162 on the top surface of the circuit base material 166 forms an internal layer circuit pattern 164, and a mask hole 165 is formed on the copper foil 163 on the back surface.
(4) Next, an adhesive layer 167, which is acquired by cutting an adhesive film in accordance with the shape of the circuit base material 166, and the circuit base material 166 are aligned.
(5) Next, as illustrated in FIG. 3A(4), using a vacuum press, the circuit base material 166 and the coverlay-attached circuit base material 160 are laminated and bonded through the intermediary of the adhesive layer 167.
Through the above process, a multilayer circuit base material 168 illustrated in FIG. 3A(4) is acquired.
(6) Next, as illustrated in FIG. 3B(5), conformal laser processing is performed using a carbon dioxide laser (wavelength: about 9.8 μm). In this way, simple via holes 169 and 170, a skip via hole 171 and a step via hole 172 are formed. At the time of this laser processing, the mask holes 154a, 154b, 154c, 154d and 165 function as a conformal mask.
Through the above process, a multilayer circuit base material 173 illustrated in FIG. 3B(5) is acquired.
(7) As illustrated in FIG. 3B(6), a plated layer of about 20 μm is formed by applying electrolytic plating processing to the whole surface of the multilayer circuit base material 173, and, after that, a conductive film of a buildup layer is processed by the photofabrication method to form external layer circuit patterns 178A and 178B.
By forming a plated layer on the internal walls of the simple via holes 169 and 170, simple vias 174 and 175 are formed. By forming a plated layer on the internal wall of the skip via hole 171, a skip via 176 is formed. By forming a plated layer on the internal wall of the step via hole 172, a step via 177 is formed.
After that, although it is not illustrated, if necessary, the top surface of a land part or the like is subjected to surface processing such as solder plating, nickel plating and gold plating, and, in a part for which the solder plating is not necessary, a protective photo solder resist layer is formed. After that, outline processing is performed by punching and the like through the use of metallic mold.
Through the above process, a multilayer flexible wiring board 179 illustrated in FIG. 3B(6) is acquired.
Next, an explanation will be given to a problem caused at the time the skip via hole 171 and the step via hole 172 are formed by laser processing.
Processed layers at the time of forming the skip via hole 171 and the step via hole 172 are the flexible insulating base member 151, the adhesive layer 158, the polyimide film 157 and the adhesive layer 167 in this order from the laser radiation surface side.
The flexible insulating base member 151 and the adhesive layer 158 are different in the decomposition temperature and the absorbance in a wavelength of around 10 μm which is a waveband of a carbon dioxide laser. That is, the flexible insulating base member 151 has a higher decomposition temperature than that of the adhesive layer 158, while the adhesive layer 158 has a higher absorbance in the waveband of the carbon dioxide laser than that of the flexible insulating base member 151.
In other words, compared to the flexible insulating base member 151, the adhesive layer 158 arranged below the flexible insulating base member 151 has a lower decomposition temperature and a higher absorbance in the waveband of the carbon dioxide laser.
Therefore, by laser light thorough the flexible insulating base member 151, ablation occurs in the adhesive layer 158 earlier than the flexible insulating base member 151. In this way, as illustrated in FIG. 4(a), a gas caused by the ablation of the adhesive layer 158 deforms the flexible insulating base member 151 and causes a bulge part 180. After that, when the pulsed laser is further radiated, as illustrated in FIG. 4(b), the bulge part 180 bursts and a burr part 181 is caused.
When the burr part 181 occurs, processed layers below it (e.g. the flexible insulating base member 151 and the adhesive layer 158) are prevented from being subjected to laser processing. Therefore, a resin residue is likely to occur on the internal layer circuit patterns 155 and 164 exposed into the skip via hole 171 and the step via hole 172.
Especially, in the case of forming a step via hole, as illustrated in FIG. 4(b), due to the step configuration, part of the burr part 181 is likely to be placed on a copper foil of an external layer. In such a case, subsequent laser processing is largely blocked.
Such a resin residue is not removed even in a desmear process performed after a laser processing process. As a result, plating adhesion to the internal walls of the step via hole and skip via hole degrades, which is a cause of degrading the reliability of an interlayer conduction path.
Also, the same applies to the polyimide film 157 and the adhesive layer 167. That is, by pulsed light passing the polyimide film 157, the adhesive layer 167 having a lower decomposition temperature and higher absorbance than the polyimide film 157 is subjected to ablation earlier.
To remove the above resin residue, it is necessary to further radiate pulsed laser. However, when the number of shots of pulsed laser is increased, there arises a problem that the productivity decreases.
Also, when the number of shots is excessively increased, the heat is accumulated in the adhesive layers 158 and 167, and, as a result, as seen from FIG. 3B(5), the adhesive layers 158 and 167 largely pull back in the side walls of the skip via hole 171 and the step via hole 172, which increases the asperities of the side walls. As a result, as seen from FIG. 3B(6), discontinuous parts occur in plate layers formed on the side walls, which is a cause of degrading the via reliability.
While it is thus necessary to remove a resin residue, it is required to form a via hole in as few shots as possible in order to improve the productivity and maintain the via reliability.
Therefore, to reduce the number of shots required for processing, it is considered to increase the energy density per shot of pulsed laser. However, in a case where the copper foil 162 forming the internal layer circuit pattern 164 is thin (for example, equal to or below 12 the pulsed light penetrates the copper foil, which is a cause of an occurrence of short defect. In recent years, to form a fine wiring pattern, there are many cases where a copper foil has to be made thin.
Also, in the case of forming the step via hole 172, even after the flexible insulating base member 151 is removed and the internal layer circuit pattern 155 is exposed, to remove the adhesive layers 158 and 167 and the polyimide film 157, pulsed light of high energy density is radiated. Therefore, in a case where the copper foil 153 forming the internal layer circuit pattern 155 has a relatively thin thickness (for example, equal to or below 12 μm), the internal layer circuit pattern 155 (i.e. copper foil 153) deforms and there occurs a space part between the internal layer circuit pattern 155 and the adhesive layer 158. This space part causes a discontinuous part in the plate layer formed on the side wall of the step via hole, which is a cause of degrading the reliability of the step via.
Also, in the case of radiating pulsed light of high energy density per shot, similar to the case of increasing the number of shots, since the heat amount accumulated in the adhesive layers 158 and 167 becomes large, the retreat amounts of the adhesive layers 158 and 167 increase and the asperity of the side wall of the via hole becomes large.
Meanwhile, there are known two laser processing methods, that is, there are known a cycle processing method of radiating pulsed light in this order on a one-shot basis to a plurality of mask holes provided in a processing area and a burst processing method of sequentially radiating pulsed light to one mask hole.
In the case of the burst processing method, by radiating a laser pulse of the second shot before the flexible insulating base member 151 bulges and turns up by pulsed light of the first shot, and by removing the flexible insulating base member 151, there is a possibility of being able to suppress an occurrence of resin residue. However, to continuously radiate pulsed light to the identical part, the heat amount accumulated in the radiated part becomes large. As a result, similar to the case of increasing the energy density per shot and the case of increasing the number of shots of pulsed light of small energy density, there occurs a case where, for example, the asperity of a via hole side wall becomes large.
In the related art, to remove a resin remaining in a via hole, there is a known laser processing method of increasing energy density of pulsed light on the way of laser processing of the via hole (Patent Literature 2). In this method, the number of processed layers is only one (resin layer 12) and therefore there does not occur a phenomenon of the above bulge and burr of the flexible insulating base member. Also, in a case where a metal layer (i.e. copper land 11) is thin, there may occur a case where pulsed light of large energy density causes the penetration and deformation of the copper land 11 exposed in the bottom surface of the via hole.
In addition, to solve the above problem, as a material of the adhesive layers 158 and 167, it is considered to use a polyamide adhesive having a lower laser light absorbance and higher decomposition temperature than an epoxy or acrylic adhesive. However, the polyamide adhesive is more expensive than the epoxy or acrylic adhesive which is generally used for a multilayer flexible printed wiring board. Therefore, there is a problem that the production cost increases.

Laser processing method and production method of multilayer flexible printed wiring board using laser processing method


A refrigerator, comprising: a refrigerator body, an air duct assembly and a branched air supply apparatus; the air duct assembly has an accommodating cavity, air passages, and air supply ports opening forward; the air passages comprise a first air passage and a plurality of second air passages; the branched air supply apparatus is installed in the accommodating cavity and has a peripheral wall portion; the peripheral wall portion defines a plurality of air outlets, the plurality of air outlets comprising a first air outlet and a plurality of second air outlets; the first air passage is communicated with the first air outlet and a first storage space; each second air passage is communicated with one second air outlet and one or more air supply ports, and each of the second air outlets communicates with at least one second air passage.

In recent years, with improvements in people's living standards and increases in the environmental awareness, the requirements on refrigerators are shifted from low-temperature refrigeration to freshness-keeping performance of the food. Therefore, air-cooled refrigerators gradually become popular. For the air-cooled refrigerator, the freshness-keeping performance of the food depends to a large extent on air circulation in an article storage compartment of the air-cooled refrigerator and temperature differences between respective sections of the refrigerator body. If the air circulation in the refrigerator body is reasonable, the smaller the temperature difference, the better the freshness-keeping performance of the refrigerator. The key component that determines whether the air circulation of the refrigerator is reasonable is an air passage which determines how to transport the air to a reasonable position in the article storage compartment. In air path designs of current air-cooled refrigerators on the market, evaporators in most of the air-cooled refrigerators are arranged in an independent accommodating compartment, and a complicated air passage system is used to connect the accommodating compartment of the evaporator to respective article storage spaces, so that the design of the existing air passage system is relatively complicated and the structure thereof is relatively large. In addition, due to the limitation of the existing air passage system structure, the air cannot be transported to an expected position.


There is provided a motor drive device including, a current detection section that detects current flowing between a power source and an inverter circuit generating voltage to be supplied to a motor, a voltage control section that outputs a first control signal to cause the inverter circuit to generate a voltage for rotating the motor at a rotation speed based on an instructed value, and a rotation speed suppression section that, in cases in which current, detected by the current detection section at a timing at which a voltage generated by the inverter circuit rises from low level to high level, is a predetermined threshold value or higher, outputs a second control signal to the voltage control section to cause the inverter circuit to generate a voltage for rotating the motor at a lower rotation speed than the rotation speed based on the instructed value.

Technical Field
The present disclosure relates to a motor drive device.
Related Art
As a blower motor employed to convey air in a vehicle air conditioner, sometimes brushless DC motors are employed in which a rotor configured by a permanent magnet tracks a rotating magnetic field generated by a stator, provided along the circumferential direction of the rotor, and rotates. Since, unlike brushed DC motors, brushless DC motors do not have a sliding configuration, power consumption is low compared to brushed DC motors, and are compatible with faster rotation speeds.
When the number of revolutions are increased in the motor, the load on the motor and a motor drive device that drives the motor increases. In the motor drive device of the brushless DC motor, for example, the load on the motor and the motor drive device is detected from a power source current value detected by a current sensor, provided between an inverter circuit generating voltage applied to the motor by switching and a battery that is a power source. Control is then performed to lower a duty ratio of voltage applied to the motor in cases in which there is a possibility of overload.
However, spikes in noise are generated sporadically in the current between the power source and the inverter circuit, such that there is a possibility that the detection of the current sensor is affected by the noise.
Japanese Patent Application Laid-Open (JP-A) No. 2011-50202 describes an electric motor drive device in which sporadic noise is eliminated by processing a signal output from the current sensor using a low pass filter to smooth the signal.
However, in the electric drive device described in JP-A No. 2011-50202, there is a possibility of significant error, such that the detected current value is lower than the actual current value, due to high frequency components of the signal being excessively eliminated by the low pass filter. In cases of significant error such that the detected current value is lower than the actual current value, strict determination criteria for overload and prioritized protection of the motor and drive device are required. There is accordingly a possibility that the duty ratio of current applied to the motor is more frequently lowered, impairing efficient operation of the motor. There is also a possibility that the product incurs an increase in cost due to mounting a filter such as the low pass filter to the circuit.


There are provided a solid oxide fuel cell system made up of (a) a solid oxide fuel cell stack, (b) a preliminary reformer for removing hydrocarbons having two or more carbon atoms from a hydrocarbon fuel by converting the hydrocarbons having two or more carbon atoms into methane, hydrogen, and carbon monoxide, and (c) an integrated heat exchanger for catalytic combustion for heating either air or fuel, or both the air and fuel, to be guided to the solid oxide fuel cell stack, by use of a combustion gas formed by combusting discharged fuel with the use of discharged air, wherein the component equipment described above are disposed in an adiabatic vessel and the integrated heat exchanger for catalytic combustion for use in the solid oxide fuel cell system.

A solid oxide fuel cell (Solid Oxide Fuel Cell: hereinafter referred to as an SOFC as necessary) is characterized in that an oxide ion (O2−) conductor is used as a solid electrolyte and is made up of a fuel electrode and an oxygen electrode, disposed in such a way as to sandwich a solid oxide electrolyte therebetween. At the time of operation, an electrochemical reaction is caused to occur by feeding fuel toward the fuel electrode and an oxidizing agent toward the oxygen electrode, thereby extracting electric power. As the oxidizing agent fed toward the oxygen electrode, use is made of oxygen-enriched air, oxygen, etc. besides air, however, the description will be given hereinafter assuming that the oxygen electrode is an air electrode and the oxidizing agent is air as appropriate.
FIG. 1 is a schematic illustration showing a disposition relation among a solid oxide electrolyte, a fuel electrode and an air electrode, making up a single SOFC, and the operation principle thereof. The single cell is made up such that the fuel electrode and air electrode are disposed with the solid oxide electrolyte interposed therebetween. Oxygen contained in air guided to the air electrode is turned into oxide ions (O2−), reaching the fuel electrode after passing through the solid oxide electrolyte. Hereupon, the oxide ions (O2−) react with a fuel, such as hydrogen, and so forth, guided to the fuel electrode, to release electrons, thereby producing reaction products such as electricity, water, and so forth. Air after use at the air electrode is discharged as an off-gas of the air electrode and fuel after use at the fuel electrode is discharged as an off-gas of the fuel electrode. In the present specification, the off-gas of the air electrode is referred to as discharged air and the off-gas of the fuel electrode is referred to as discharged fuel.
FIGS. 2 and 3 are schematic illustrations showing a mode of a flat plate type SOFC, respectively, by way of example. The SOFC includes a cylindrical type, an integrated stacked type, and so forth; however, these types are the same in principle as the flat plate type SOFC. FIG. 2 is the schematic illustration showing a self-supporting membrane type SOFC while FIG. 3 is the schematic illustration showing a supported membrane type SOFC. In FIGS. 2 and 3, there is shown a single cell, respectively, however, since a voltage of one unit of the single cell is low, the single cells are normally stacked one on top of another in a plurality of layers. In the present specification and drawings, a structure made up by stacking the single cells one on top of another in a plurality of layers is referred to as a solid oxide fuel cell stack (=an SOFC stack) or simply as a stack.
In the case of the self-supporting membrane type SOFC, as shown in FIG. 2, a sealant 2 and a separator 3 are sequentially disposed on top of a single cell 1 while a separator 4, a sealant 5, and a separator 6 are sequentially disposed underneath the single cell 1, these component members being closely stacked to thereby make up the self-supporting membrane type SOFC. For the sealants 2, 5, use is made of a ceramic material such as glass, or the like, and for the separators 3, 6, use is made of a ceramic material such as MgAl2O4—MgO, or the like, while for the separators 4, use is made of a ceramic material such as lanthanum chromite, and so forth.
In the case of the self-supporting membrane type SOFC, the structure is retained by a solid oxide electrolyte membrane by itself. Accordingly, the solid oxide electrolyte membrane is required to have a large film thickness thereof and is normally formed to a thickness on the order of 100 μm. Further, the operational temperature thereof is in a range of 800° C. to 1000° C., normally as high as about 1000° C., forming a high temperature field in excess of 1000° C. inside the stack. The component members thereof are therefore limited to expensive heat-resistant alloys or ceramics. In the case of the ceramics, there arise such problems as cracks occurring thereto due to differences in temperature occurring inside the stack, and so forth, while in the case of housing the stack in an adiabatic vessel, a thermal insulating material of the adiabatic vessel increases in thickness, resulting in an increase in the size of an SOFC system.
On the other hand, in the case of the supported membrane type SOFC, as shown in FIG. 3, a single cell 7 is retained inside the frame of a spacer 8, and on top of the single cell 7, there are sequentially disposed a bonding material 9, a cell supporter 10, a spacer 11, and a separator 12. Although there are also sequentially disposed a bonding material, cell supporter, spacer, and separator underneath the single cell 7, these component members are omitted in FIG. 3. In the case of the supported membrane type SOFC, a solid oxide electrolyte membrane is made up by use of, for example, a LaGaO3-based or zirconia-based material, being formed to have a film thickness as small as, for example, on the order of 10 μm, so as to be supported by a fuel electrode large in film thickness.
The inventor et al. have focused attention on the supported membrane type SOFC, in particular, and continued efforts for the development thereof, having thus far obtained several successful results (JP-A 2002-367615). With the supported membrane type, since, for example, the solid oxide electrolyte membrane can be formed to a small film thickness, it is possible to perform operations at a low temperature, lower than the temperature in the case of the self-supporting membrane type, that is, in a range of 650° C. to 850° C., for example, at as low as 750° C. As a result, for the constituent material of the spacer 8, bonding material 9, cell supporter 10, spacer 11, separator 12, and so forth, respectively, use can be made of an inexpensive material such as stainless steel, for example, ferritic stainless steel etc. and furthermore, the supported membrane type SOFC has various other advantages including implementation of a reduction in size.
Incidentally, with the SOFC, carbon monoxide as well is used as fuel besides hydrogen. Accordingly, in the case of using town gas, LP gas, etc., containing hydrocarbons as constituents, for raw fuel, such raw fuel is reformed so as to be converted into hydrogen and carbon monoxide before use. Methane, among hydrocarbons, is converted into hydrogen and carbon monoxide through internal reformation by the agency of catalysts such as Ni, and so forth, provided at the fuel electrode of the SOFC and they are used as the fuel of the SOFC.
However, if the raw fuel contains hydrocarbons other than methane, that is, hydrocarbons having two or more carbon atoms, such as ethane, ethylene, propane, butane, etc., this will cause carbon to be formed on piping to the SOFC and the fuel electrode, which blocks the electrochemical reaction, thereby resulting in deterioration in cell performance. These problems attributable to the hydrocarbons having two or more carbon atoms will have vital effects on the SOFC which is repeatedly operated for a long time period while in service.
Town gas, LP gas, natural gas, gasoline, or kerosene, etc. includes hydrocarbons other than methane, that is, hydrocarbons having two or more carbon atoms. For example, in the case of town gas, to give an example of the composition thereof, the same contains 88.5% methane, 4.6% ethane, 5.4% propane, 1.5% butane (herein % represents vol. %, the same applies hereinafter), so that about 11.5% of hydrocarbons having two to four carbon atoms are contained in addition to methane as the main constituent thereof. For this reason, in order to use those as the raw fuel of the SOFC, there is the need for reforming those hydrocarbons having two or more carbon atoms such that the hydrocarbons having two or more carbon atoms are removed by converting the same into methane, hydrogen, and carbon monoxide.
There are available the steam reforming process and partial combustion process as processes for reforming hydrocarbons. These processes represent techniques for converting hydrocarbons into a reformed gas with hydrogen as the main constituent thereof and, in the case of hydrocarbons being, for example, methane, the steam reformation reaction can be expressed by the following formula:CH4+H2O=3H2+COWith the SOFC, however, not only hydrogen and carbon monoxide, needless to say, but also methane as well after conversion into hydrogen and carbon monoxide, upon internal reformation at the fuel electrode, can be used as fuel, so that it needs only to be sufficient if the hydrocarbons having two or more carbon atoms are removed from the fuel in a stage of being fed to the fuel electrode of the SOFC, thus eliminating the need for reformation of the fuel up to a reformed gas with hydrogen and carbon monoxide as main constituents thereof.
Thus, for the reformation of the raw fuel for use in the SOFC, it will suffice to remove the hydrocarbons having two or more carbon atoms by conversion thereof into other constituents such as methane, hydrogen, carbon monoxide, etc., so that it is unnecessary to convert all the hydrocarbons into hydrogen, and carbon monoxide. Accordingly, with an SOFC system, use is made of a reformer for executing reformation whereby the hydrocarbons having two or more carbon atoms are converted into other constituents such as methane, hydrogen, carbon monoxide, etc. to be thereby removed from the raw fuel. That is, with the reformer of the raw fuel for use in the SOFC, there is no need for converting all the hydrocarbons into hydrogen, and carbon monoxide, and the hydrocarbons having two or more carbon atoms, contained in the raw fuel are converted into methane, hydrogen, carbon monoxide, etc., resulting in removal of the hydrocarbons having two or more carbon atoms.
In the present specification and drawings, a reformer used for this purpose is referred to as a preliminary reformer, and fuel prior to preliminary reformation with the use of the preliminary reformer is referred to as raw fuel.
FIG. 4 is a schematic illustration showing a system wherein the preliminary reformer according to the steam reforming process is disposed together with the SOFC stack, using the town gas, LP gas, and so forth as the raw fuel. As shown in FIG. 4, there are sequentially disposed a desulfurizer 13, a steam generator 14, a preliminary reformer 15, and a SOFC stack 16. There can be a case where the steam generator 14 is integrated with the preliminary reformer 15. If a sulfur compound is contained in the raw fuel, the fuel electrode of the SOFC will undergo poisoning caused by the sulfur compound. The town gas, and LP gas contain sulfur compounds such as mercaptan, and others, serving as an odorant, and natural gas, gasoline, etc. also contain sulfur compounds such as hydrogen sulfide, and so forth, although the content thereof varies depending on production sites, and so forth. The desulfurizer 13 is used for removal of the sulfur compounds from the raw fuel, but the desulfurizer 13 is unnecessary if the raw fuel does not contain sulfur or sulfur has already been removed. The raw fuel, after being desulfurized in the desulfurizer 13, is fed to the preliminary reformer 15 together with steam generated by the steam generator 14, whereupon the hydrocarbons having two or more carbon atoms are reformed to be converted into methane, hydrogen, carbon monoxide, and so forth. A reformed gas is guided to the fuel electrode of the SOFC stack 16.
Now, as described above, the operational temperature of the self-supporting membrane type SOFC is in the range of 800° C. to 1000° C., and is normally at as high as about 1000° C., and the operational temperature of the supported-membrane type SOFC is not higher than about 850° C., that is, lower than the operational temperature of the self-supporting membrane type SOFC, but is still high. For this reason, there is the need for reducing heat loss from the SOFC stack, the preliminary reformer, and so forth, as much as possible, and accordingly, it is considered appropriate to house those component equipment in the adiabatic vessel, or to cover the same with a thermal insulating material. In addition, in view of the need for retaining a constant temperature in the above-described range during the operation of the system, it is desirable to heat air and fuel to be guided to the SOFC before feeding the same.
It is therefore an object of the invention to provide an SOFC system wherein by combined use of an SOFC stack, a preliminary reformer for use in SOFCs, and an integrated heat exchanger for catalytic combustion for use in the SOFCs, constituting the SOFC system, respective advantages of both equipment, that is, the preliminary reformer and the integrated heat exchanger for catalytic combustion, are obtained, and heat loss of the SOFC system is eliminated or reduced as much as possible, and also to provide the integrated heat exchanger for catalytic combustion for use in the SOFC system.


A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 μm to 13 μm.

As CMOS technologies move to smaller node sizes (n14, n10, n7, n5, n3) in order to keep up with Moore's Law, transistors will be made with silicon, SiGe, GaAs and III-V FinFET structures. This is illustrated in FIG. 1. These material systems are also used in silicon photonics, and the present invention relates to how photonics integrated circuits and CMOS may be integrated together with a monolithic process flow.
Integrating CMOS structures monolithically with photonics is far from straightforward. In particular, the integration of CMOS with large-μm waveguide structures is challenging to achieve. In one known example, integration is achieved, by making the silicon photonics using the tools and processes available in a CMOS line. This is disadvantageous since the resulting photonics devices are limited only to those who may be fabricated using CMOS line equipment, such as small waveguide sizes, low topology, CMOS-only material systems, such as no SiGe with a high germanium content, which is required for Franz-Keldysh modulators.
In another known example, monolithic integration of silicon photonics with Bi-CMOS (a combination of CMOS technology with bipolar junction transistor technology) is achieved using a Bi-CMOS fabrication process. Again, the disadvantage here is that photonics which are fabricated using Bi-CMOS fabrication equipment are limited in their feature sizes, topologies and materials.

Integrated structure and manufacturing method thereof


The present invention provides a light-transmitting electromagnetic wave-shielding material for use in displays or in-vehicle panels each having a polarizing plate or a retardation plate, wherein the light-transmitting electromagnetic wave-shielding material undergoes no generation of light interference fringes and is satisfactory in visibility even through sunglasses, goggles, glare-proof panels or glare-proof window materials having polarizing capability. By using unstretched light-transmitting organic polymer materials low in molecular orientation or small in molecular orientation unevenness as the base substrate of an electromagnetic wave-shielding layer, the light-transmitting electromagnetic wave-shielding material excellent in light interference fringe prevention capability can be obtained.

1. Field of the Invention
The present invention relates to a light-transmitting electromagnetic wave-shielding material, in particular a light-transmitting electromagnetic wave-shielding material having a light interference fringe prevention capability.
2. Description of the Related Art
In these years, there has emerged a big problem that malfunctions or communication failures are caused in machines or electronic devices and apparatuses by electromagnetic waves generated from electronic devices and apparatuses such as personal computers, cellular phones, flat panel displays typified by liquid crystal displays and plasma displays, touch panels, car navigation systems, portable information terminals and portable game machines. Additionally, there has been pointed out a possibility that electromagnetic waves adversely affect human bodies, and hence various countermeasures have been taken with various electromagnetic wave-shielding materials for the purpose of preventing so-called electromagnetic wave interference (hereinafter referred to as EMI).
As base substrates for light-transmitting electromagnetic wave-shielding materials, there are used transparent resin sheets made of resins such as polyethylene terephthalate (PET) resin, polyethylene naphthalate resin, polyester resin and polycarbonate resin. For the purpose of improving mechanical strength and heat resistance, these resins are applied with a stretching treatment in which these resins are uniaxially stretched or biaxially stretched (see Japanese Patent Laid-Open Nos. 2006-157040, 2006-319251, 10-335884 and 10-41682). In the cases where these electromagnetic wave-shielding materials are used in the displays of electronic devices and apparatuses including polarizing plates or retardation plates, there is a problem that when displays are seen through sunglasses, goggles, glare-proof panels or glare-proof window materials having polarizing capability, light interference fringes are generated under the influences of the molecular orientation and the unevenness in the molecular orientation of the base substrates to remarkably degrade the visibility.

Light-transmitting electromagnetic wave-shielding material


The objective of the invention is to improve the communication performance of a secondary system within such a range that does not affect a primary system. A wireless communication system comprises: a primary system that can use a given frequency on a priority basis; secondary wireless communication systems each of which is operated with the same frequency; and a network control apparatus that controls the secondary wireless communication systems. The network control apparatus comprises: a primary system information acquiring unit that acquires information of the primary system; a secondary system information acquiring unit that acquires communication quality information of the secondary wireless communication systems; and an optimum computing unit that calculates, on the basis of the primary and secondary system information acquiring units, the transmission powers of a plurality of base stations of the secondary wireless communication systems.

Traffic is expected to increase further with as mobile broadband becomes widespread. For this reason, it is necessary to ensure new radio-wave resources. However, since bands conveniently used in mobile systems, for example, bands equal to or less than 6 GHz, have already been allocated densely, a shortage state of radio waves has occurred. In order to realize new radio-wave uses, it is necessary to flexibly use the radio waves in future by using frequency bands (white spaces) available "spatially," "temporally," and "technically," even when the frequencies are the allocated frequencies, while sufficiently avoiding interference in the existing works.
With such a tendency, research, development, and standardization of wireless communication systems using the white spaces have progressed in all the countries of the world. In the United State of America, an instruction to acknowledge use of the white spaces was adopted in November 2008 and work including establishment of specific technical standards and construction of databases has been carried out in Federal Communications Commission (FCC). In Europe, Office of Communications (Ofcom) has carried out research and development of new wireless technologies for the objective of utilizing the white spaces in various countries by suggesting guidelines for liberation of the white spaces. In the standardization organizations of IEEE SCC 41, IEEE802.22, IEEE802.19, and the like, efforts to standardize technologies for utilizing the white spaces to a high degree have been actively made.
In wireless communication systems utilizing the white spaces, wireless systems (secondary systems) originally not permitted to use frequencies share frequencies according to the surrounding environment in frequency bands used by existing wireless systems (primary systems) using allocated frequencies. In this scheme, only when the primary systems do not use frequency bands spatially and temporally, the secondary systems are permitted to use the frequency bands. To adjust the frequencies, databases (DBs) that store secondary system permission information used to permit the secondary systems to use the frequencies are prepared in the wireless communication systems utilizing the white spaces.
In particular, in wireless communication systems utilizing the white spaces of TVs, the fact that the TVs do not use frequencies can be confirmed in advance by databases. Therefore, transmission power of the maximum level is used in many cases.
PTL 1 suggests a method of adaptively changing the values of permissible interference power and maximum transmission power in regard to primary systems according to communication quality of the primary systems. PTL 2 suggests a method of expanding a signal transmission opportunity in a secondary wireless communication system which is a non-priority system when a base station of a first wireless communication system which is a non-priority system increases a permissible interference level of a first wireless communication system signal transmitted using a shared frequency band based on expected interference power reported from a transmission station of the second wireless communication system which is a priority system.
In the standard IEEE802.22 (NPL 1) standardized for a wireless communication system utilizing the white space of a TV, an Etiquette Mode function is introduced to determine a frequency channel which does not overlap with a frequency between adjacent cells from frequency information or a policy obtained by self-station location information or a DB. When use of a primary system is detected as in terrestrial digital broadcasting by a Spectrum Sensing function, a structure (IDRP) is provided to transfer a channel to another backup channel determined in advance. In the IEEE802.22, control is performed such that a frequency channel overlaps between adjacent cells as little as possible. However, when a frequency channel is insufficient and a frequency has to be shared between the BS and the BS installed at a distance at which mutual interference occurs, a Self-coexistence function is used. The Self-coexistence function is a function necessary in order to share a frequency channel without mutual interference even between adjacent cells in an IEEE802.22 system.
FIG. 1 illustrates a flowchart of the Self-coexistence function.
Inter-cell information such as a frequency channel already used in Power-on of a BS (F100) and Network Discovery is acquired (F101). Acquisition of a frequency channel to be used is attempted according to Etiquette Mode (F102 and F103). When there is the frequency channel to be used, the frequency channel is used to perform communication (F104 and F110). When there is no available frequency channel, the BS enters Self-Coexistence Mode and a frequency channel used by an adjacent cell is shared to be used (F108, F109, and F110). The Self-coexistence function has On-Demand Frame Contention (F106) in which only a node acquiring a transmission right can perform communication and DS/US Split Adjustment (F107) in which a ratio of downlink and uplink communication times between the adjacent cells is adjusted, and On-Demand Frame Contention and DS/US Split Adjustment are executed by self-determination of the IEEE802.22 BS.

Wireless communication system, transmission power control method, and network control apparatus


A coating composition for use in carbonless copying systems including (1) a resin dispersion which is a phenol/aldehyde condensation product formed by the interaction of an alkyl-substituted salicylic acid, an alkyl-substituted phenol, an aldehyde and a metal source; (2) a binder; and (3) a pigment. This coating composition provides faster imaging in carbonless systems than conventional coatings, at temperatures below room temperature.

Standard carbonless copying systems or pressure sensitive copying paper include a plurality of substrates, e.g., paper sheets, arranged in a manifold, each sheet having one or more coatings on a surface thereof. The manifold is designed so that when external pressure caused by a typewriter, pen, or other instrument is applied to the outermost sheet, a colored image will be formed on at least one surface of each sheet of the manifold.
The top sheet of the manifold to which the pressure is applied has a coating on its back surface. This coated back surface typically includes microcapsules containing an initially colorless chemically reactive color-forming dye precursor as the fill material. The front surface of the next sheet, which is adjacent to the back surface of the top sheet, is coated with a material containing a component, such as phenolic resin or reactive clay, that is capable of reacting with the colorless dye precursor contained in the microcapsules to produce a color. Thus, an external pressure on the front surface of the top sheet will rupture the microcapsules on the back surface and release the colorless dye precursor which then chemically reacts with the reactive component of the coated front of the adjacent sheet to produce a colored image corresponding to the area of pressure. Similarly, colored images are produced on each successive sheet of the manifold by the external pressure rupturing the microcapsules carried on the bottom surface of each sheet.
The sheets of the carbonless copying system manifold are designated in the art by the terms CB for "coated back," CFB for "coated front and back," and CF for "coated front." The CB or transfer sheet is usually the top sheet of the manifold and the sheet to which the external pressure is applied. The CFB sheets are the intermediate sheets of the manifold, each of which is able to have an image formed on its front surface by a pressure, and each of which also transmits the contents of ruptured microcapsules from its back surface to the front surface of the next sheet. The CF or recording sheet is the bottom sheet and is coated only on its front surface so that an image can be formed on it.
While it is customary to have the coating containing the microcapsules on the back surface of the sheets and to have the coating containing the reactive component for the capsules on the front surface of each of the sheets, the reverse arrangement is also possible. In addition, one of the reactive ingredients may be carried in the sheets themselves, rather than applied as surface coatings. Furthermore, the component that reacts with the colorless dye precursor may also be microencapsulated.
The use of carbonless copying paper has recently been extended to the outdoors or to a room which may be influenced by the temperature of the outdoors. There now exists a need for a carbonless copying system that maintains its performance, particularly speed and density of color development, in any environment including the low temperatures that can be experienced outdoors. Typical examples of applications wherein such use is contemplated include use of outdoor gasoline station credit cards, outdoor use of credit cards for food (e.g., pizza) delivery, outdoor police or fire record logging, etc.
Currently, a zincated alkylphenol novolac resin dispersion sold under the trademark name HRJ-2456 and manufactured by Schenectady Chemicals, Inc. of Schenectady, N.Y., is used by applicant in its carbonless sets and has been found to be somewhat deficient at producing rapid images at below room temperatures.
Accordingly, it is an object of the present invention to provide a composition which can be applied to one sheet of a carbonless copying system to provide rapid imaging upon contact with a dye precursor.
It is another object to provide a composition which can be applied to at least one sheet of a carbonless copying system to provide images of high density upon contact with a dye precursor.
It is a further object of the invention to provide a composition which can be applied to at least one sheet of a carbonless copying system to enable effective operation of the carbonless system at lower than room temperature.


A bead dispensing system is provided for delivering small amounts of substances onto substrates. The system can include, for example, a movable support structure having an array of spaced-apart projections depending from its lower side. An attraction source, such as a vacuum, magnetic, and/or electrostatic force, is operable at each projection end region to attract and retain one bead. The projection array can be aligned with an array of bead-receiving regions of a substrate, e.g., an array of spaced-apart wells of a micro-plate or card. In one embodiment, a plurality of reagent-carrying beads are picked up, retained at respective projection end regions, and moved to a location over a multi-well plate. The beads are then released in a fashion permitting each bead to land in a respective well. The system of the invention is particularly useful for fabricating arrays of reagents.

Multi-well arrays have long been popular for separately performing numerous chemical and/or biological reactions at substantially the same time. Perhaps the most popular multi-well format in recent years has been the 96-well microplate. Typically, several microliters of reagents are placed in each of the 96 reaction wells, per assay. In an effort to decrease reagent costs, as well as to increase throughput, many laboratory directors are now moving toward the use of even higher-density plates having very small wells, such as 384- and 1536-well formats with wells about 1 millimeter in diameter, or smaller. With the higher density well formats, comes the need for distributing even smaller amounts of substances (e.g. <1 nL) into extremely compact arrays.
Most conventional automated micro-volume deposition systems dispense substances in fluid form, using robotic delivery assemblies. In a typical system, a robot aspirates fluid into one or more ejectors, moves a loaded ejector to a well in a micro-card or plate, and delivers an aliquot of fluid. Commonly used ejectors include "non-contact" devices, such as ink jet nozzles, and "contact" devices, such as a pens or quills. Ink jets, pens, and quills are well-known devices used in a variety of applications. Unfortunately, for the purpose of depositing numerous substances into the wells of a micro-card or plate, each of these devices is associated with certain disadvantages. For example, ink jets generally work fine when the fluid of interest has been carefully optimized for the nozzle. However, when depositing many different fluids through the same nozzle, optimization for each separate fluid is often impractical. As a result, the nozzles can become clogged. With regard to pens and quills, these devices can collide with the well walls, and are generally too slow for cost-effective operations.
The task of delivering micro-volumes of fluidic substances can be especially challenging when the substance deposited at each location is unique to one or only a few positions in the array. Further complications can arise when multiple fluidic substances are serially deposited into each well. For example, liquids can drip and splatter, contaminating reagents in neighboring wells. As another disadvantage, all devices contacting a fluid reagent must be cleaned, or disposed of, before being used with a different fluidic reagent. This is necessary to prevent mixing (i.e., contamination) of one reagent with another. It should be appreciated that multiple rounds of cleaning and aspiration can be time consuming and expensive, as well. This is especially true for applications requiring a large number of different substances. As a further disadvantage, it is often difficult to control the volume of fluid dispensed with a high degree of accuracy. Also, small amounts of dispensed liquid can be difficult to detect with standard imaging systems. Accordingly, dispensing errors can go undetected and, thus, uncorrected.
The need is apparent for an apparatus and process capable of fabricating an array of substances on a micro-card or plate in a relatively fast, efficient and accurate manner.


The electronic semiconductor component has a crystalline wafer substrate with an active surface and a semiconductor layer coating the active surface. So that the semiconductor layer has a few surface defects the crystalline wafer substrate is a sapphire or silicon carbide single crystal and the active surface has a pit density of less than 500 pit/cm2, preferably less than 100 pit/cm2. The polishing method for obtaining the active surface with these pit densities includes polishing with a polishing agent, such as a silicon suspension, and a polishing tool, which is pressed on the active surface with a pressure of preferably from 0.05 to 0.2 kg/cm2 and moved over the active surface with polishing motions distributed statistically and uniformly over a 360° angle during polishing.

1. Field of the Invention
The present invention relates to low-stress substrate wafers with a low-defect, active surface, a method for making them and their uses. It also relates to electronic components, such as LEDs, transistors and chips made with them.
2. Related Art
Electronic and electro-optic semiconductor elements, such as lasers, high-speed transistors, LDs, LEDs and other complex components usually comprise a thin carrier or wafer substrate, especially on which functional layers are arranged over each other in a terrace-like manner. Functional layers of this sort are usually semiconductor or also insulating or balancing layers. To make this sort of component usually wafers are sawed off a block, cylinder and/or rod of a respective substrate and subsequently ground, lapped and polished, in order to obtain as planar and as smooth a surface as possible, which has a maximum elasticity and planarity and a minimum surface roughness. The grinding and polishing of the wafer is normally performed by a method in which the wafer substrate is fixed in a holder, which preferably rotates about its longitudinal axis and alternates its rotational direction, i.e. oscillates. The wafer substrate is pressed on a rotating grinding or polishing plate, which is equipped with a polishing pad, which similarly alternates its rotational direction. In this way the substrate surface to be coated is ground or eroded as smoothly as possible and smoothed so that a good to very good surface may be obtained. After that the functional layers are applied to the solid usually very thin substrate wafer.
One possibility for application of layers of this sort is the so-called epitaxy, especially metal-organic gas phase epitaxy (MOCVD=metal organic chemical vapor deposition or also MOCVPE=metal organic chemical vapor phase epitaxy). In this sort of method the semiconductor layers are deposited on each other on the heated substrate from reactive gaseous starting materials. The substrate and/or wafer are exposed to high temperatures, which lead to distortion and warping of the thin layers or platelets, so that non-uniform coatings are possible in the worst cases.
Moreover it has been shown that deposition of semiconductor layers on the wafer is a very temperature sensitive process and especially small temperature differences of 1° C. can lead to wavelength shifts of about 1 nm during manufacture of LEDs.
Furthermore it has been shown that defects in the surfaces themselves, faults in the crystal structure, impurities or even deviations of the surfaces from planarity can lead to defect sites in the layer structure, which impair the desired electrical insulating and/or electro-optic functions of the layer. A single observable defect of this sort, which suggests the existence of structural crystallographic defects, is called a "pit". Interference microscopy (e.g. by means of a Leica Interference microscope, 160-power (16×10) magnification, resolution max 0.8 μm) is a suitable method for detection of this type of defect.

Methods for making wafers with low-defect surfaces, wafers obtained thereby and electronic components made from the wafers


An alkaline secondary battery comprising a positive electrode, a negative electrode, and an alkaline electrolyte, wherein the positive electrode comprises a conductive substrate and a mixture held by the conductive substrate, the mixture containing nickel hydroxide and a conductive cobalt compound, and the positive electrode has pores, substantially all of the pores each having a diameter with a range of 0.0001 .mu.m to 10 .mu.m.

This invention relates to an alkaline secondary battery, to a paste type positive electrode for alkaline secondary battery, and to a method for manufacturing an alkaline secondary battery.
The positive electrode for alkaline secondary battery can be generally classified into two types, i.e. a sintered type and a paste type. In view of enhancing the capacity of battery, a paste type positive electrode wherein a paste containing nickel hydroxide particles as an active material is filled in or coated on an electronic collector has been predominantly employed. It is imperative for this paste type positive electrode to ensure a sufficient electric contact between the particulate active material and the electronic collector so as to improve the utilization of the particulate active material. With a view to realize the aforementioned sufficient electric contact, various methods haven been adopted, e.g. a method wherein cobalt metal or a cobalt compound is added as a conductivity assistant to a paste and then converting the cobalt metal or compound into a high-order cobalt oxide of high conductivity by subjecting it to an initial charging, or a method wherein cobalt hydroxide is first formed on the surface of particulate nickel hydroxide, which is then subjected to a heat treatment in the presence of alkali so as to form a high order cobalt oxide of high conductivity on the surface of the particulate nickel hydroxide.
Although an alkali secondary battery provided with the aforementioned paste type positive electrode is effective in improving the utilization of the active material, the alkali secondary battery becomes poor in over-discharge property so that the lowering of capacity recovery ratio becomes prominent when the alkali secondary battery is stored for a long period of time or under a high temperature environment.
By the way, it is disclosed by Oshitani et al in J. Electrochem. Soc., 136 (1989) on page 1590 that a high order cobalt oxide formed as a conductive network on a paste type nickel electrode can be stably kept remained during the ordinary charging/discharging. Further, DENKI KAGAKU 63, No.1 (1995) describes on page 952 that if an alkali secondary battery provided with a paste type nickel positive electrode is left for a long period of time or under a high temperature environment, the battery voltage would be lowered and the capacity recovery of the battery at occasion of re-charging would be deteriorated.
Meanwhile, Japanese Patent Unexamined Publication Hei/5-314983 discloses a method of performing an initial charge of an alkali secondary battery wherein a calcium compound is added to the positive electrode and then the initial charging is performed in an atmosphere heated to 40 to 70.degree. C. This initial charging is intended to accelerate the dissolution of the calcium compound in the positive electrode thereby to obtain an alkali secondary battery exhibiting a stable initial performance.
On the other hand, Japanese Patent Unexamined Publication Hei/5-275082 discloses a method of manufacturing a nickel-hydrogen secondary battery which is provided with a nickel positive electrode and a negative electrode containing an AB.sub.2 -based hydrogen-absorbing alloy, wherein the initial charging is performed in an atmosphere heated up to 50 to 70.degree. C. so as to lower the charging efficiency of the positive electrode and to enhance the initial performance of the negative electrode.
However, it has been still difficult, in spite of this initial charging, to sufficiently enhance the capacity recovery ratio, once the battery is left for a long period of time or under a high temperature environment.

Alkaline secondary battery, paste type positive electrode for alkaline secondary battery, method for manufacturing alkaline secondary battery


A maxillofacial anchoring and distracting system (10) is shown for lengthening the alveolar and small craniofacial skeletal bones by distraction osteogenesis. The distraction system includes a base plug (12), an internally and externally threaded anchoring screw body (14), a distraction jack screw (16) and healing screw (18). The base plug is press-fit into an osteotomy and acts as a baseplate to resist and transfer force received from the distraction jack screw to the subperiosteal corticotomy callus. The application of distraction force to the subperiosteal corticotomy via the distraction jack screw is resisted coronally by the anchoring screw body. Once the desired monofocal distraction osteogenesis has been completed, the maxillofacial anchoring and distraction system can be removed and easily replaced with an optimal length endosseous dental implant.

The present invention addresses problems associated with regenerating maxillofacial bone mass to treat congenital or functional masticatory deficiencies. Conventionally, in order to restore masticatory deficiencies a patient with marginal bone mass is first treated with a surgical bone graft. Bone grafting techniques range from a harvested autogenous onlay graft to a synthetic hydroxyapatite bone mixture used to pack and build up the surgical site. Once the graft has healed, a second surgery is performed to insert the appropriate length endosseous dental implant and to restore masticatory function.
The process of bone grafting to regenerate bone mass has suffered from limited results. In many cases, at the time for surgical insertion of the endosseous dental implant, the grafting mass has significantly or completely resorbed away. One reason for the loss of this grafting material is the body's requirement for an applied stress to stimulate and maintain the bone mass. Furthermore, as documented cases have shown, if a synthetic filler is mixed with the harvested graft material, it is not uncommon for the filler material to migrate from the surgical site. This migration and degradation of the graft material minimizes the benefit of the procedure. These undesired results combined with the morbidity of the harvested area demonstrate the need for an alternative surgical procedure. In addition, these conventional multiple surgical procedures require a greater investment of time, money and available grafting materials than is desirable.

Maxillofacial anchoring system for alveolar and small bone skeletal distraction


The system and method of the invention automatically provide appropriate configuration and control software to a hardware system consisting of multiple target hardware modules. A system controller is connected to the target hardware modules and to a repository that stores a set of software modules. Each software module includes configuration and control information for a particular target hardware module. When a particular software control and configuration scheme for at least a portion of the target hardware modules is to be implemented in the hardware system, software modules corresponding to the particular software control and configuration scheme are selected and associated with a system definition file that is also stored in the repository. When the system definition file is invoked by the system controller, the system controller executes the associated software modules thereby providing the particular software control and configuration scheme to appropriate target hardware modules. When the particular software control and configuration scheme needs to be updated, one or more software modules of the system definition file may be replaced with an updated version without reconfiguring the hardware system.

1. Field of the Invention
The present invention relates to a system and method for improving software configuration and control management in a hardware system. More particularly, the invention is directed to a system and method for automatically providing appropriate configuration and control software to a hardware system consisting of a controller and multiple target hardware modules connected thereto.
2. Description of the Related Art
Hardware systems having a controller and multiple hardware modules are in common use in the computer and communication industries. For example cellular telecommunication networks are complex systems composed of large numbers of base stations and repeaters connected to a control unit. In another example, local area networks typically include a central server with multiple computer work stations connected thereto.
A typical previously known multi-module hardware system is controlled by a complex system software module having various components with control and configuration information for each of the system""s hardware modules. However, this approach suffers from a serious disadvantage. Because hardware systems are often continuously upgraded or changed by adding new hardware modules and/or improving existing hardware modules, it is necessary to either replace the entire system software module with a new system software version or to provide a supplemental software module of comparable complexity to the original software module in order to provide proper control and configuration information for the new and/or improved hardware modules. Such software replacement and/or supplementation is a complex and time consuming task requiring dedication of significant hardware system and technical personnel resources. In addition, these software replacement problems also apply to more frequently performed software upgrades to enhance the features of the software, or the updating of existing software to fix bugs or faults. Another disadvantage of previously known hardware systems is that when a particular system software function is added or upgraded, it is necessary to replace the entire system software module.
It would thus be desirable to provide a system and method for automatically providing appropriate configuration and control information to a multi-module hardware system when the hardware system is updated or the functionality of the hardware system is changed without replacement of the system software module. It would further be desirable to effectively manage changes in desirable configuration and control schemes for a multi-module hardware system.
The disadvantages and limitations discussed above are overcome by the present invention. The system and method of the invention automatically provide appropriate configuration and control information to a multi-module hardware system when the hardware system is updated or the functionality of the hardware system is changed without replacement of the system software module.
In accordance with the invention a hardware system is provided with a system controller, such as a computer network server or a wireless communication controller, for controlling operation and configuration of the hardware system, a set of target hardware modules, such as computer workstations or wireless communication base stations, for performing a variety of functions such as executing end-user software applications or routing wireless communication signals, and a system repository for storing various software modules, each software module containing configuration and functionality (i.e. control) information for a particular target hardware module. Each software module also includes an information record with one or more of the following data items: software module name, software module version, software module last revision date, the name of the particular target hardware module for which the software module is intended, a software module signature representative of integrity of control and configuration information of the software module, and software module source information representative of a repository location in which the software module is stored.
In contrast to previously known hardware systems, instead of a system control module, a system definition file, representative of a desired configuration and functionality scheme for the hardware system or a portion thereof is defined by the system controller and stored in the system repository. The system controller then selects a set of software modules that together provide the desired configuration and functionality information and associates the software module set with the system definition file. When the system definition file is invoked by the system controller, the associated software modules are executed to provide desired configuration and functionality (i.e. control) information to appropriate target hardware modules of the hardware system, thereby automatically configuring and providing desired functionality to the hardware system.
Multiple system control modules corresponding to different hardware system configurations and functions may readily be defined and stored in the system repository. Advantageously, the software modules may be shared by various system definition files as is necessary or appropriate, thus improving the hardware system performance and reducing system repository storage requirements. When the hardware system is upgraded or changed such, for example, as by adding a new target hardware module, one or more of the software modules may be upgraded or changed by the system controller to a different version without having to reconfigure or replace the system definition file with which the one or more software modules are associated. Even when the hardware system is not changed, one or more of the software modules may be upgraded or changed by the system controller to a different version to enhance the features of the software or to fix bugs or faults in the existing software. Similarly, when implementing a new configuration and/or functionality scheme in the existing hardware system, one or more new software modules may be added to the system repository and a new system definition file may be defined by the system controller to include the new software module or modules and to thereby implement the new configuration and/or functionality scheme. Finally, when a new desired hardware system configuration and/or functionality scheme does not require new software modules, an existing system definition file may be redefined by the system controller by changing the listing of invoked software modules in the associated software module set. In order to prevent an inappropriate or unauthorized system definition file from being invoked by the system controller, each software definition file optionally includes a security record that is checked by the system controller before the software definition file is invoked. If the security record is correct, then the system controller invokes the software definition file. If the security record is not correct, then the system controller does not invoke the software definition file.
Other objects and features of the present invention will become apparent from the following detailed description considered in conjunction with the accompanying drawings. It is to be understood, however, that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims.

System and method for improved software configuration and control management in multi-module systems


A semiconductor device includes: a plurality of pixel units disposed in a matrix shape, each of the plurality of pixel units including: a first photoelectric conversion element for converting incident light of a first color into signal charges; a second photoelectric conversion element for converting incident light of a second color into signal charges; a third photoelectric conversion element for converting incident light of a third color into signal charges; and a detector circuit shared by the first to third photoelectric conversion elements for detecting the signal charges converted by each of the first to third photoelectric conversion elements, wherein the plurality of pixel units are pixel units adjacently disposing a row (column) juxtaposing the first photoelectric conversion element and detector circuit and a row (column) juxtaposing the second and third photoelectric conversion elements.

Miniaturization of a metal oxide semiconductor (MOS) type solid state image pickup device is progressing. For example, an average pitch between photodiodes as pixels is not longer than 1.4 μm. As a photodiode is made fine, a read transistor for reading an amount of signal charges converted by the photodiode is also made fine. As an area of a photodiode is reduced, a sensitivity lowers. As read transistors become small in size, their characteristics are varied.
Techniques are desired which efficiently dispose a photodiode, a read transistor and the like in a limited area. For example, a pixel unit structure has been proposed in which three photodiodes are disposed at three apexes of a triangle, and a floating diffusion to which signal charges converted by the photodiodes are transferred, a read transistor and the like are disposed near in a central area of the triangle (refer to JP-A-2006-165567).

Semiconductor device including solid state image pickup device, and portable electronic apparatus