A method for sensing a back electromotive force induced in a winding of a voice coil electro-mechanical actuator controlled in a discontinuous mode by alternating conduction phases to off-phases includes sensing voltage at terminals of the winding during an off-phase The winding is driven during a conduction phase immediately preceding the off-phase to invert, during a final portion of the conduction phase before entering an off-phase, a direction of flow of the current through the winding.

Voice coil motors (VCM) are used in many applications. They are substantially composed of a winding placed in a magnetic field generated by a permanent magnet By forcing a certain current in the windings, a force that displaces the winding is generated. The displacement of the winding may be controlled with high precision.
Besides VCMs, there are other electro-mechanical actuators that work by exploiting this principle, such as audio loudspeakers, electro-locks, etc. Because of the wide use of VCMs, reference will be made to this class of motors, but what will be stated holds for any voice-coil like actuator
VCMs are largely used for moving the arm that supports the read/write heads over the rotating disk of a hard drive, and to move it to and from a parking ramp.
The ramp unloading (parking) operation of the read/write heads is essential for preventing possible impacts with the hard disk during transportation. In fact, if the mechanical arm is subjected to strong vibrations, it could flex and the read/write heads could hit the hard disk damaging it or themselves, if not safely parked. The reverse operation, called ramp loading, is performed each time the hard disk is turned on for reading from or writing data in it.
It is important that the swing (displacement) of the mechanical arm be controlled during these operations for preventing possible damage to the heads when the arm reaches the stop position on the parking ramp, or when bringing the heads onto the disk.
A dedicated control circuit controls the translation speed of the mechanical arm moved by the VCM motor during ramp loading and unloading operations. According to a known technique for controlling the speed of a VCM, the speed of the mechanical arm is measured by optical encoders, as disclosed in the U.S. Pat. No. 5,455,723.
The speed of the mechanical arm may also be measured by sensing the back electromotive force (BEMF) induced in the motor winding by the arm motion The back electromotive force that is generated by the arm motion is generally proportional to the translation speed of the arm. This back electromotive force may be measured by sensing the voltage on the nodes of the motor winding when the motor winding is in a high impedance state (tristate), as disclosed in U.S. Pat. No. 6,542,324.
In a discontinuous functioning mode, the output stage that powers the motor alternates conduction phases, during which the motor is substantially connected to the supply line and off-phases during which the motor is placed in a high impedance state (tristated). With TON being the duration of a generic conduction state and TOFF being the duration of a generic period during which the motor is tristated, no current circulates in the winding for a time TOFF and the voltage measured at the terminals of the motor is theoretically equal to the back electromotive force (BEMF)
A control system of a VCO that implements this method is shown in FIG. 1 It allows control of the motor either in a voltage mode or in a current mode. Control circuitry, not depicted in the figure, controls the switches T1, T2, T3 and T1 of the power stage through control signals The operational amplifier senses the back electromotive force BEMF induced in the winding of the VCM by sensing the voltage at its terminals when all the switches of the power stage are open.
A drawback of this technique is that it is necessary to wait for a minimum time TOFFMIN before the voltage at the terminals approximates with sufficient precision the induced back electromotive force BEMF. Tests carried out on a VCM showed that, from the instant in which the motor is tristated, there is a transient component of the voltage on the motor that could affect the sensing of the BEMF.
This effect is illustrated by the waveforms of FIGS. 2 and 3, which show time graphs of the currents and of the voltages on the nodes OUT_P and OUT_M during the intervals TON and TOFF, in two different driving conditions of the VCM. The scales of the current and of the voltage are respectively 200 mA/div and 5 V/div, while the time-scales are 50 μs/div and 10 μs/div for the graphs of FIGS. 2 and 3, respectively.
Even when the current transient has decayed, there persists a voltage transient that typically lasts several tenths of microseconds longer, and that may alter the sensing of the BEMF. By comparing the graphs of FIGS. 2 and 3, the amplitude of this prolonged voltage transient depends upon the current that has flown through the winding during the preceding conduction phase.
To sense correctly the BEMF induced in the winding of the VCM, it is necessary that the motor be tristated for a time TOFFMIN sufficiently long to let the transient voltage decay. These phenomena limit the maximum switching frequency of the control signals of the switches of the driving stage, and as a consequence, the precision of control of the speed of the motor. This maximum switching frequency typically ranges between 1 kHz and 3 kHz, thus acoustic noise is generated.

Method for sensing the back electromotive force induced in the winding of a voice coil motor


Embodiments of the present disclosure provide a user interface having a header or banner that displays information about a current context to help a user to gather information. In one example, the user interface displays information of a datacenter's health and status, including alerts that have been triggered. The user interface displays a context banner that tracks information gathered and actions taken within the context of the alert, and provides aggregate information or detailed information about the alert.

Virtual machines (VMs) are an increasingly popular technology for improving flexibility and efficiency in a range of computational systems. Certain VM systems are conventionally managed using a graphical user interface (GUI) application, which provides an intuitive visual interface for managing individual virtual machine instances. As VM systems grow to include a larger number of VM instances, conventional GUIs can quickly become unwieldy and inefficient in presenting information about individual VM instances.
Further, recent improvements in the computing power, mobile display technologies and connection speeds of mobile devices, combined with the continued decreases in hardware costs, have made powerful mobile devices available even to system administrators and the general public. Mobile applications for the mobile devices have been developed to provide access to information services and applications when users are traveling or away from the office, including GUIs for managing VM instances in a datacenter. However, problems with presenting information about the datacenter in conventional GUIs are further exacerbated by limitations in display size and usability of mobiles devices.

Graphical user interface for tracking context


A transfer tape dispenser comprises a housing and a supply spool and a take up spool disposed within the housing. A carrier ribbon has a first end and a second end, with the first end connected to the supply spool, and the second end connected to the take-up spool. An applicator tip is partially disposed within the housing and includes a platform with a front edge, a rear edge, a first side edge, a second side edge, a top surface, a bottom surface. A first wall is adjacent to the first side edge and a second wall is adjacent to the second side edge. At least one protuberance extends from the applicator tip and is adapted to maintain outer edges of the transfer tape adjacent to the top surface of the platform.

Transfer tape dispensers are typically used to apply an application layer of material to a surface from a flexible carrier tape. The dispensers typically include an applicator tip that receives the carrier tape coated on one side with the application layer from a supply spool and apply the application layer to a surface. A return spool then collects the carrier tape.
The applicator tip includes a platform across which the carrier tape traverses. Tape guides typically extend perpendicularly from the platform of the applicator tip. The tape guides maintain the carrier tape on the platform of the applicator tip while the dispenser is in use by not allowing the carrier tape to slip off the side of the platform.
The application layer can consist of one or more layers of material. When the application layer is pressed against a surface by the applicator tip, it is released from the carrier tape and transferred to the surface. A correction application layer consists of an opaque layer to obscure a mark and a contact adhesive layer to attach the opaque layer to a surface.
In certain circumstances, it has been found that the carrier tape may fold over itself along its length. While the tape guides are effective for maintaining the carrier ribbon on the platform, they have no effect in ensuring that the carrier tape does not fold over itself. This is especially a problem when the user must follow a curving or twisting path to cover a mark. It can also be a problem in certain designs of transfer tape dispensers in which the carrier tape must rotate 90° along its length after leaving the supply spool but before traversing the applicator tip.
While the disclosure is susceptible to various modifications and alternative constructions, certain illustrative embodiments thereof have been shown in the drawings and will be described below in detail. It should be understood, however, that there is no intention to limit the disclosure to the specific forms disclosed, but on the contrary, the intention is to cover all modifications, alternative constructions, and the equivalents falling within the spirit and scope of the invention as defined by the appended claims.

Correction tape applicator tip with cylindrical projection


A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes first and second silicon controlled rectifiers (SCRs) formed in a substrate. Further, the first and the second SCRs each include at least one component commonly shared between the first and the second SCRs.

An ESD event refers to a phenomenon of electrical discharge of a current (positive or negative) for a short duration during which a large amount of current is provided to an integrated circuit (IC). The large current may be built-up from a variety of sources, such as the human body. An ESD event commonly results from the discharge of a high voltage potential (typically, several kilovolts) and leads to pulses of high current (several amperes) of a short duration (typically, 1 nanosecond to 1000 nanoseconds). An ESD event is generated within an IC, illustratively, by human contact with the leads of the IC or by electrically charged machinery being discharged in other leads of an IC. During installation of integrated circuits into products, these electrostatic discharges may destroy the IC and thus require expensive repairs on the products, which could have been avoided by providing a mechanism for dissipation of the electrostatic discharge to which the IC may have been subjected.
Manufacturers and users of ICs must take precautions to avoid ESD. For example, ESD prevention can be part of the device itself and may include special design techniques for device input and output pins. Additionally, external protection components can also be used with circuit layout. For example, to protect ICs from an ESD event, many schemes have been implemented, including use of a silicon controlled rectifier (SCR). An SCR can sustain high currents, hold the voltage across the SCR at a low level and may be implemented to bypass high current discharges associated with an ESD event.
Thus, an SCR device may be the proper ESD solution for high speed differential inputs and outputs (IOs). For example, an SCR typically provides less capacitive loading as compared to a diode. Additionally, an SCR provides better ESD protection as compared to a string diode.
However, size constraints may also be an issue when using SCRs for high-speed differential IOs. For example, two separate diode-triggered SCRs on differential pads take up a large area on the device. In contrast, a compact SCR make take forty percent less area than two separate SCRs.
Accordingly, there exists a need in the art to overcome the deficiencies and limitations described hereinabove.

Structure and method for an electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure

International Business Machines Corporation


A friction bearing composite material comprises a metal base layer, a porous support layer applied thereto, and a low friction layer made from PTFE forming a bearing surface for a bearing partner. The low friction material forming the sliding surface also fills the pores in the support layer and comprises at least 60 vol. % PTFE and 10-25 vol. % zinc sulphide. In order to achieve a high wear resistance with a low coefficient of friction, the low friction material further comprises 1.5-3.5 vol. % carbon fibers and 1-7 vol. % PFA.

The invention concerns a sliding bearing composite material with a metallic support layer, a porous carrier layer disposed thereon, and a sliding layer on the basis of PTFE which forms a sliding surface for a sliding partner, wherein the sliding layer material forming the sliding layer also fills the pores of the carrier layer and comprises at least 60 percent by volume of PTFE and 10-25 percent by volume of zinc sulfide.
A sliding bearing composite material of this type is disclosed e.g. in EP 0 232 922 B1. This document, however, does not mention a minimum content of 60 percent by volume of PTFE. For some length of time, the Assignee has produced a sliding bearing composite material which consists of 75 percent by volume of PTFE and 25 percent by volume of ZnS. This patent document also mentions that 5 to 40 percent by volume of aramide fibers, carbon fibers, glass fibers may be additionally contained as fillers.
EP 0 708 892 B1 discloses a sliding bearing composite material which does not disclose all of the elements upon which the invention constitutes an improvement, whose sliding layer material comprises PTFE and 2 to 20 percent by volume of fibrillated aramide fibers. In addition to PTFE, the embodiments also comprise PPS, PFA or calcium fluoride in various portions. This document does not give any further information.
WO 99/45285 discloses a sliding bearing composite material which does not disclose all of the features upon which the invention constitutes an improvement, whose sliding layer material should comprise PTFE, 10 to 30 percent by volume of a metal fluoride, in particular calcium fluoride and 2 to 10% fibrillated aramide fibers and 2 to 10% of a meltable fluoropolymer, FEP, PFA or MFA, wherein FEP is preferred. A specific embodiment is disclosed comprising 4 percent by volume of aramide fibers, 7 percent by volume of FEP, 18 percent by volume of CaF, the rest being PTFE.
WO 99/01679 discloses a sliding bearing composite material whose sliding bearing material comprises at least 60 percent by volume of PTFE, 15 to 25 percent by volume of a metallic filler, preferably lead, and in particular 8 to 12 percent by volume of PVDF and 1 to 3 percent by volume of carbon fibers oriented in a preferred direction. The use of metallic fillers, in particular lead, has become increasingly unacceptable.
DE 693 27 377 T2 discloses a sliding bearing composite material with a metallic support layer and porous carrier layer and a sliding layer, wherein the main component of the sliding layer material is PTFE. Moreover, zinc oxide whisker and magnesium oxysulfate are provided to improve the poor wear resistance of PTFE. In accordance with one embodiment variant, zinc sulfide is mentioned in addition to a large number of other available components.
DE 33 43 697 A1 also discloses a sliding bearing composite material with support layer and carrier layer and a sliding layer whose sliding layer material comprises a mixture of the following components: 0.1 to 50 percent by volume selected from one or more of solid lubricants such as metallic lubricants with low melting point for example Pb, Sn or alloys thereof, metal oxides, metal sulfides, metal fluorides, graphite or the like, and with fibrous materials such as carbon fibers and ceramics such as SiC; the rest being substantially PTFE, wherein the total amount of components, excluding PTFE, is within a range of 0.2 to 70 percent by volume.
EP 0 232 922 B1 discloses a sliding bearing composite material with 60 percent by volume PTFE, 20 percent by volume of glass fibers and 20 percent by volume of ZnS. This document further mentions that a polymer matrix material may contain glass fibers, glass balls, carbon fibers, ceramic fibers and aramide fibers individually or collectively in an amount of between 5 and 40 percent by volume, preferably 10 to 25 percent by volume.
EP 0 632 209 B1 also discloses a sliding bearing composite material with support layer, carrier layer and sliding layer, wherein the sliding layer material consists of PTFE, 50 to 30 percent by volume of metallic filler and 5 to 40 percent by volume of PVDF. The metallic filler is lead or zinc sulfide. A specific composition comprises 70 percent by volume of PTFE, 10 percent by volume of PVDF and 20 percent by volume of lead.
In view of the above, it is the underlying purpose of the present invention to produce a sliding bearing composite material of the above-mentioned type which has high wear resistance and yet a low coefficient of friction.

Friction bearing composite material with a metal base layer


The present invention provides a MEMS device and methods for manufacturing thereof, in which planarizing the surface of a beam and improving performance of the MEMS device are aimed. In addition, the present invention provides a light modulation device and a GLV device in which this MEMS device is used, and methods for manufacturing thereof; and further, a laser display using this GLV device. According to the present invention, a MEMS device includes a substrate side electrode and a beam that is disposed so as to oppose the substrate side electrode and is driven by electrostatic attraction force or electrostatic repulsion force that acts between the substrate side electrode and the driving side electrode, with the substrate side electrode being formed of a single-crystalline semiconductor layer.

With the advances in microscopic manufacturing technology, much attention has been focused on so-called micro-machine (MEMS: Micro Electro Mechanical Systems, ultra-miniature electric, mechanical compound) devices and miniature devices in which MEMS devices are incorporated.
A MEMS device is a device that is formed as a microscopic structure on a substrate, with an insulation film, which is formed on a semiconductor substrate made of silicon (Si), gallium arsenic (GaAs), or the like; or on an insulative substrate such as a glass substrate, a quartz substrate, or the like; in which a driving body outputting mechanical driving force and a semiconductor integrated circuit or the like that controls the mechanical body are electrically united. A basic feature of the MEMS device is such that a mechanically structured driving body is incorporated into a part of the device, and the driving body is electrically driven by the use of coulombic attraction force or the like between electrodes.
FIGS. 13 and 14 show typical compositions of an optical MEMS device that is applied to an optical switch and a light modulation device by taking advantage of the reflection or diffraction of light.
An optical MEMS device 1 shown in FIG. 13 includes a substrate 2, a substrate side electrode 3 formed on the substrate 2, a beam 6 having a driving side electrode 4 that is disposed in parallel to oppose the substrate side electrode 3, and a support part 7 for supporting one end of the beam 6. The beam 6 and substrate side electrode 3 are electrically insulated by a void 8 therebetween.
A required substrate, such as a substrate with an insulation film formed on a semiconductor substrate of, for example, silicon (Si), gallium arsenic (GaAs) and the like or an insulative substrate such as a glass substrate or a quartz substrate is used for the substrate 2. The substrate side electrode 3 is formed of a polycrystalline silicon film by doping impurities therein, metal film (Cr deposited film, for example), and the like. The beam 6 is composed of, for example, an insulation film 5 such as silicon nitride film (SiN film) or the like and the driving side electrode 4 serving as a reflective film consisting of, for example, Al film of about 100 nm in thickness. The beam 6 is formed in a so-called cantilever fashion with its one end supported by the support part 7.
In the optical MEMS device 1, the beam 6 displaces itself in response to electrostatic attraction force or electrostatic repulsion force generated between the substrate side electrode 3 and driving side electrode 4 by an electric potential that is applied to the substrate side electrode 3 and driving side electrode 4, and as shown by a solid line as well as broken line in FIG. 13, for example, the beam 6 displaces itself into a parallel state or inclined state relative to the substrate side electrode 3.
An optical MEMS device 11 shown in FIG. 14 is composed of a substrate 12, a substrate side electrode 13 formed on the substrate 12 and a beam 14 that straddles the substrate side electrode 13 in a bridge-like fashion. The beam 14 and substrate side electrode 13 are insulated by a void 17 therebetween.
The beam 14 is composed of a bridge member 15 of, for example, a SiN film, that rises up from the substrate 12 and straddles a substrate side electrode 13 in a bridge-like fashion and a driving side electrode 16 of, for example, an Al film of about 100 nm in thickness, that, serving as a reflective film, is provided on the bridge member 15 to oppose the substrate side electrode 13 in parallel to each other. The substrate 12, substrate side electrode 13, beam 14 and others may employ similar compositions and materials those explained in FIG. 13. The beam 14 is formed in a so-called bridge-like fashion in which the both end thereof are supported.
In the optical MEMS device 11, the beam 14 displaces itself in response to electrostatic attraction force or electrostatic repulsion force generated between the substrate side electrode 13 and driving side electrode 16 by an electric potential that is applied to the substrate side electrode 13 and driving side electrode 16, and as shown by a solid line and a broken line as well in FIG. 14, for example, the beam 14 displaces itself into a parallel state or fallen state relative to the substrate side electrode 13.
With these optical MEMS devices 1, 11, light is irradiated on the surfaces of the driving side electrodes 4, 16 serving as a light reflective film, and by taking advantage of differences in the direction of reflected light depending upon positions into which the beams 6, 14 are driven, these MEMS devices can be applied to an optical switch having a switch function of detecting the reflected light in one direction.
Further, the optical MEMS devices 1, 11 are applicable as a light modulation device for modulating the strength of light. When light reflection is taken advantage of, the strength of light is modulated by vibrating the beams 6, 14 according to the amount of reflected light in one direction per unit time. This light modulation device runs on a so-called time modulation.
When light diffraction is taken advantage of, a light modulation device is composed of a plurality of beams 6, 14 disposed in parallel relative to the common substrate side electrodes 3, 13, and by varying the height of, for example, driving side electrodes each serving as a light reflective film with the movements of every other beam 6, 14 such as moving closer to or moving away from the common substrate side electrodes 3, 13, the strength of reflected light from the driving side electrodes is modulated by means of light diffraction. This light modulation device runs on a so-called space modulation.
FIGS. 15 and 16 show a conventional method for manufacturing a MEMS device. Those figures show the case in which the method is applied to the above-mentioned MEMS device 11 having the beam in bridge fashion, which is illustrated in FIG. 14.
First, as shown in FIG. 15A, a single-crystalline silicon substrate 31 is prepared. Next, as shown in FIG. 15B, an insulation film 32 is formed on a main surface of the substrate 31 to insulate the substrate from a substrate side electrode which is formed later on. For example, a thermal oxide film (SiO2 film) 32 is formed by heat treatment at 950° C. in the oxygen atmosphere.
Then, as shown in FIG. 15C, on the insulation film 32 a conductive film 33 is formed, which becomes the substrate side electrode formed of, for example, a poly-crystalline silicon film or a non-crystalline silicon film. For example, after forming an intrinsic poly-crystalline silicon film or intrinsic non-crystalline silicon film using silane (SiH4), hydrogen (H2) gas by means of a low-pressure CVD method, an activating process is conducted by ion implantation or by thermal diffusion, of phosphor (P). Alternatively, the conductive film 33 is directly formed by adding phosphine (PH3) when forming a film.
Next, as shown in FIG. 15D, the conductive film 33 is subjected to patterning so as to form a substrate side electrode 13.
Then, as shown in FIG. 15E, a thermal oxide (SiO2) film 34 is formed on the entire surface so as to cover the substrate side electrode 13. The thermal oxide film 34 is, for example, formed by heat treatment at 950° C. in the oxygen atmosphere. At this time, crystal growth of poly-crystalline or non-crystalline silicon of the underlaid substrate side electrode 13 is accelerated, so that the surface unevenness of the thermal oxide film 34 becomes large.
Next, as shown in FIG. 16A, a sacrificial layer 35 of, for example, a non-crystalline silicon film for forming a void is formed on the overall surface of the thermal oxide film 34.
Next, as shown in FIG. 16B, the sacrificial layer 35 is subjected to patterning such that a portion corresponding to the substrate side electrode 13 is left intact while the other portion is removed.
Next, as shown in FIG. 16C, a bridge member 15 made of, for example, a silicon nitride (SiN) film is formed, followed by selectively forming a drive side electrode 16 made of, for example, Al on the portion corresponding to the substrate side electrode 13 of the bridge member 15 so as to form a bridge-like beam 14.
Next, as shown in FIG. 16D, the sacrificial layer 35 is removed so as to form a void 17 between the substrate side electrode 13 and beam 14, and consequently an electrostatic drive type MEMS device 11 is obtained.
Ultimately, the MEMS device 11 has come to have, as relative roughness of the film surface of the drive side electrode 16 of the beam 14, the surface relative roughness reflecting all of the unevenness at the time of forming the substrate side electrode 13, the unevenness that grew at the time of forming the thermal oxide film 34, and the unevenness of the uppermost surface of the Al film (drive side electrode 16) itself.
FIG. 17 shows a composition of a GLV (Grating Light Valve) device developed by SLM (Silicon Light Machines) as a light strength modulation device for a laser display, that is, as a light modulator.
In a GLV device 21, as shown in FIG. 17A, a common substrate side electrode 23 made of a Cr thin film is formed on an insulative substrate 22 such as a glass substrate or the like, and a plurality of beams 24, in this example, six beams 24 [241, 242, 243, 244, 245, 246] straddling across the substrate side electrodes 23 in a bridge-like fashion are disposed in parallel. The compositions of the substrate side electrode 23 and beams 24 are the same as those explained in above-described FIG. 14. Namely, as shown in FIG. 17B, a reflective film cum driving side electrode 26 made of an Al film of about 100 nm in thickness is formed on the surface, which is parallel to the substrate side electrode 23, of a bridge member 25 made of a SiN film, for example.
The beam 24 made of the bridge member 25 and reflective film cum driving side electrode 26 provided thereon is a portion so-called a ribbon.
The aluminum film (Al film) used as the reflective film cum driving side electrode 26 is a suitable metal as the material for optical components because of the following reasons: (1) it is a metal that can be comparatively easily formed into a film; (2) the dispersion of reflectance with respect to wavelengths in a visible light range is small; (3) alumina natural oxidation film generated on the surface of the Al film functions as a protective film to protect a reflective surface.
Further, the SiN film (silicon nitride film) composing the bridge member 25 is a SiN film formed by means of the low-pressure CVD method, and the SiN film is selected by reason of the physical values of its strength, elasticity constant, and the like being suitable for mechanically driving the bridge member 25.
When a voltage is applied between the substrate side electrode 23 and reflective film cum driving side electrode 26, the above-mentioned beam 24 moves closer to the substrate side electrode 23 according to the above-mentioned electrostatic phenomenon, and when the application of the voltage is stopped, the beam 24 moves away from the substrate side electrode 23 and returns to an original position.
The GLV device 21 alternately varies the height of the reflective film cum driving side electrode 26 with the movements of the plurality of beams 24 (that is, those of every other beams) such as moving closer to or moving away from the substrate side electrode 23, and modulates the strength of light reflected on the driving side electrode 26 by means of the diffraction of light (one beam spot is irradiated on the whole of six beams 24).
Mechanical characteristics of the beam driven by taking advantage of electrostatic attraction force and electrostatic repulsion force are almost predicated on the physical properties of the SiN film formed by the use of the CVD method or the like, with an Al film mainly functioning as a mirror.
Then, it is extremely important, for the optical MEMS device that takes advantage of the reflection and diffraction of light, to control the relative roughness (RMS) of the film surface of the light reflective film cum driving side electrode. Because, the device's characteristics deteriorate as light reflection and light diffraction efficiencies decline according to film surface unevenness.
The substrate side electrode of the MEMS device is formed on a required substrate, such as a substrate with an insulation layer formed on a semiconductor made of, for example, silicon, GaAs, or the like, or an insulative substrate like a quartz substrate or a glass substrate, for example. As for materials thereof, a poly-crystalline film or a metal film in which impurities are doped is conventionally used. However, at a time of forming these films, crystalline grains are generated and as a consequence, there occurs unevenness representing the thickness of the film and crystalline grains on the surface.
For example, a poly-crystalline silicon film is conventionally formed by means of the chemical vapor deposition method (CVD method); however, it has been known that the size of crystalline grains greatly differs from about several tens nm to about several μm depending on the temperature of atmosphere. When a film of 300 nm in the thickness is formed at 650° C. by the use of, for example, the low-pressure CVD method, crystalline grains of 500 nm to 1 μm or so are generated, and at that time the relative roughness (RMS) value of the surface of the substrate side electrode becomes more than 10 nm. The relative roughness of the surface of the substrate side electrode sequentially affects upper layers in the subsequent film forming process and transcribed to the film surface of the optically important driving side electrode in an expanded fashion. Ultimately, a light reflective film cum driving side electrode having piled-up surface unevenness is manufactured.
When formed under the condition of low temperature below 600° C., a non-crystalline silicon without crystallinity is obtained. In this case, there is virtually no relative roughness caused by a single film, though in the subsequent process, when conditions under high temperature are required, for example, at processes: for forming a thermal oxide film, for activation after impurities are doped, for forming a silicon nitride (SiN) film and the like, non-crystalline silicon crystallizes and becomes a poly-crystalline silicon having crystalline grains. When a plurality of processes are conducted at high temperatures, crystalline growth is accelerated, so that on the surface ultimately the film having unevenness affected by underlaid crystalline layers may be formed.
As mentioned above, when the substrate side electrode is formed of poly-crystalline silicon, surface unevenness is, as shown in FIG. 18, increased and transcribed to the surface of the driving side electrode (Al film) 4 constituting the beam (Al/SiN laminated layer) 6, resulting in the deterioration of the light reflectance of the driving side electrode 4 functioning as a mirror.
For example, with the MEMS device in which aluminum (Al) is made to serve as a reflective film, if the film is an ideal bulk Al film, reflectance of the Al film obtained may possibly be about 92%. However, when a poly-crystalline silicon film is formed as the substrate side electrode, followed by forming an Al film on the uppermost surface, that is to become a light reflective film cum driving side electrode, after the process of, for example, forming a thermal oxide film or a SiN film at high temperature, the reflectance of the beam surface will deteriorate by more than several percentage points, so that there is a case in which only about 85% of the reflectance of the beam surface can barely be obtained. Therefore, as one of the measures to improve the characteristics of the MEMS device, there has been great demand for technology to planarize the relative roughness of the surface, particularly, of the underlaid substrate side electrode.

MEMS device and methods for manufacturing thereof, light modulation device, GLV device and methods for manufacturing thereof, and laser display


The invention relates in particular, though not exclusively, to an integrated circuit with an embedded non-volatile memory with floating gate (10). According to the invention, at least two poly layers of equal or at least substantially equal thickness are used for this device. The first poly layer, poly A, is for the floating gate (10) and for the gates (22) of NMOS and PMOS in the logic portion of the circuit. The second poly layer, poly B, serves exclusively for the control electrode (21) above the floating gate. If so desired, a third poly layer may be deposited for both the control electrode and the logic gates, so that the thicknesses of these electrodes, and thus their resistances, are given desired values. Problems like overetching and bridging during saliciding are prevented in that the control electrode and the logic gates have the same thickness.

The invention relates to a semiconductor device with a semiconductor body made of silicon which is provided at a surface with a first MOS transistor with an insulated gate of polycrystalline or amorphous silicon and with a non-volatile programmable memory element in the form of a second MOS transistor with an electrically floating gate of polycrystalline or amorphous silicon and with a control electrode of polycrystalline or amorphous silicon situated above the floating gate and electrically insulated therefrom. The invention also relates to a method of manufacturing a semiconductor device with a semiconductor body made of silicon which is provided at a surface with a first MOS transistor with an insulated gate of polycrystalline or amorphous silicon and with a non-volatile programmable memory element in the form of a second MOS transistor with an electrically floating gate of polycrystalline or amorphous silicon and with a control electrode of polycrystalline or amorphous silicon situated above the floating gate and electrically insulated therefrom.
The term "poly" will be used hereinafter for short; It should be borne in mind that this term covers not only polycrystalline silicon but also amorphous silicon.
Such a semiconductor device and a method of manufacturing this semiconductor device are known inter alia from Applicant's U.S. Pat. No. 5,395,778.
The memory element together with a large number of similar elements will usually form part of a non-volatile memory which is familiar under the designations EEPROM or (flash) EPROM. This memory may be of a stand-alone type, in which case the semiconductor device mainly comprises the memory and the peripheral electronics necessary for it. Said first MOS transistor may then be formed by a transistor from the periphery, but also by a selection transistor which forms a memory cell together with a memory transistor. In alternative embodiments for which the invention is of particular, though not exclusive importance, the memory may be embedded, the semiconductor device being an integrated signal processing circuit with a built-in non-volatile memory. A standard CMOS process is mostly used for the manufacture of such a circuit, supplemented with a few additional process steps for the memory in the signal processing portion (called logic hereinafter). As is generally known, information is written in the form of electric charge which is stored on the floating gate and which defines the threshold voltage of the transistor. The information may be read in that it is ascertained whether the transistor is conducting or not, given a suitable voltage at the control electrode.
The cited patent U.S. Pat. No. 5,395,778 describes a process in which the floating gate and the control electrode are provided in a split-poly process where the poly deposition necessary for forming the logic gates is carried out in two steps. In the first step, a first partial layer for the logic is formed as well as the poly layer of the floating gate, which is subsequently covered with an interpoly dielectric. In the second step, the remainder of the poly layer is provided for the logic gates while at the same time a poly layer for the control electrode is formed above the poly, layer of the floating gate, electrically insulated therefrom by the interpoly dielectric.
The poly layer in the logic has a greater thickness than the poly layer of the control electrode in the memory in this process, which leads to drawbacks under some circumstances. Thus it may be necessary to carry out an overetching in the memory portion if the control electrode and the insulated gates of the logic are simultaneously defined and etched. Another drawback may arise when the sides of the control electrodes and of the insulated gates are both provided with spacers through deposition and etching-back of an oxide layer. It is possible in this case that the oxide layer in the memory portion is etched back too far relatively as a result of the thickness difference between the poly layers. This in its turn may lead to short-circuits (bridging) when subsequently the source and drain zones and the gates are provided with silicide contacts in a salicide process known per se.

Semiconductor device having an embedded non-volatile memory and method of manufacturing such a semicondutor device


In one embodiment, a case transfer apparatus includes a base, a feeding device having a first end tapering to a second end that is coupled to the base, a motor disposed on the base, a rotatable feed wheel assembly disposed on the base and coupled to the motor, the rotatable feed wheel assembly adapted to receive at least one case via gravitational force from a feeding device, and a roller plate coupled to the motor and disposed adjacent the rotatable feed wheel assembly within a case receiving region where the at least one case is rotated and heated.

1. Field of the Invention
Embodiments of the invention generally relate to a method and apparatus for annealing metallic objects. More specifically, embodiments described herein relate to a method and apparatus for annealing elongated, tubular cases made of a metallic material, such as brass ammunition cartridges, or ammunition cases or casings.
2. Description of the Related Art
Annealing is a process where heat is applied to a metal in order to change the properties, such as strength and hardness, of the metal. Annealing is typically utilized to improve ductility, relieve internal stresses, and generally soften metals that have been hardened by working the metal and/or heat treatment. Proper annealing restores the properties of the metal to a near original or virgin state.
Ammunition cartridges or cases are made from brass which is subject to hardening during manufacture, use, and reloading of the cases. Commercially available cartridges are typically annealed during manufacture to include various hardnesses along the length of the case. For example, firearm cartridges typically include a base at a first end thereof where the primer is located and a mouth at a second end thereof where the projectile is held. In a properly annealed cartridge the mouth will have a greater ductility than the base. However, when the cartridge is used to discharge a projectile, heat is created which causes the case to expand and contract, thus hardening the case, and particularly, the mouth of the case. Reuse (i.e., reloading) of the case requires subsequent processing, such as sizing and trimming of the case, which may work-harden portions of the case. If the hardened portions of the case are not annealed, such as the mouth (or neck, in shouldered cases), the mouth may crack and render the cartridge unusable. Thus, annealing of the cases assures proper operation of the cartridge as well as extends the lifetime of the case for subsequent reuse.
Devices for annealing ammunition cases are commercially available; however, the commercially available devices suffer from some drawbacks. In one commercially available device, only a single case may be loaded and annealed at one time, which is time consuming and labor intensive. Other conventional devices typically hold multiple cases vertically in a turntable that rotates in a horizontal plane. The commercial devices do not include an automatic case loading device. Loading of the turntable is thus done manually to assure that the case is properly oriented in the turntable (e.g., mouth up/base down). This requires constant supervision by personnel during operation to ensure efficient throughput. Further, the horizontally oriented turntable devices are heavy and occupy a large footprint. Additionally, the conventional devices often require more than one heat source, which increases the cost of the annealing operation. While these conventional devices may be suitable for the occasional user, the devices are not desirable for commercial operations and/or frequent users.
Thus, there exists a need in the art for a method and apparatus for an annealing device capable of automatic loading of cases, high-throughput and requires a smaller footprint.

This patent is subject to a terminal disclaimer.

Apparatus and methods for cartridge case annealing


Devices can use various features to prevent the disconnection of connectors used in medical treatments. For example, a disconnection prevention member can have ends which hold luer connectors such that a male luer connector is prevented from separating from a female luer connector. The member can thus prevent disconnection of luer connectors that are incompletely mated.

Tubing connections are commonly used medical treatment systems, chemical processing plants, pharmaceutical plants, laboratories, etc. A common class of connectors mate by mutually rotating parts of the connectors, by pushing them together, or both. One common type of connector is a luer connector which includes a relatively long male element which fits tightly in a channel of a female element. In 1970s luers were merely pushed together to make a connection. Later, threaded collars were added to make it harder for the luer connectors to come apart. Even though the threaded collar increases the reliability of the connection, in some applications, such as extracorporeal blood treatment systems, it is desirable to address even minute levels of risk, if possible. There is a need in the art for simple and inexpensive ways to increase the reliability of connectors for fluid-carrying vessels and particularly, this need is felt in the area of tubing systems used in medical treatment devices. In particular, it would be desirable to enhance the security of luer-type connectors without altering the familiar features of their design or usability.


An anisotropic conductive material includes micro-capsules dispersed in a bonding resin. The micro-capsules contains, as a filler material, a conductor and a polymerization initiator, a curing agent or a curing promotor. A wall member encapsulating the filler material is formed of a thermoplastic or thermosetting insulative resin. Therefore, if the micro-capsules in the anisotropic conductive material are broken or destroyed by pressure or both of pressure and heat, electrical connection can be established between electrode pads and electrode terminals of a wiring substrate through the conductors contained in the micro-capsules. Simultaneously, the polymerization initiator, the curing agent or the curing promotor flows out, so that the insulative bonding resin is solidified. Thus, the anisotropic conductive material has a high connection reliability, a good reproducibility, an excellent packaging workability, and excellent shelf stability.

1. Field of the Invention
The present invention relates to an electric connecting anisotropic conductive material used for bonding and connecting fine electrodes of a LSI chip or another to electrodes formed on a wiring package substrate. The present invention also relates to a method for connecting and bonding an element such as LSI chip onto a wiring package substrate, by using the anisotropic conductive material.
2. Description of Related Art
In the prior art, this type of electric connecting anisotropic conductive material has been formed of conductive particles dispersed in an insulative bonding agent. Connection has been achieved by a heat press bonding performed under a pressure of 20 Kg/cm.sup.2 to 30 Kg/cm.sup.2 at a temperature of 180.degree. C. to 200.degree. C. For example, the conductive particles have been formed of solder particles or particles formed of a macromolecular material such as divinylbenzene copolymer and having a surface coated with a conductive metal thin film of Au, Ni, etc. The conductive particles have an averaged particle size of 0.01 .mu.m to 50 .mu.m. The insulative bonding agent has been formed of, for example, a thermoplastic resin such as urethanes or styrene-butadiene-styrene type block copolymers. Alternatively, a thermosetting resin of epoxy type or others has been used. The anisotropic conductive material is dispersed in the insulative bonding resin with a proportion of 1% by volume to 10% by volume.
In addition, in a conventional packaging method, an LSI chip formed with electrode pads and a wiring substrate formed with electrode terminals in correspondence to the electrode pads are located to oppose to each other, with a hot-melt adhesive resin containing conductive particles dispersed therein being interposed between the LSI chip and the wiring substrate. Thereafter, the LSI chip is depressed onto the wiring substrate, and the whole is heated, so that the hot-melt adhesive resin is softened, and the electrode pads and the corresponding electrode terminals are electrically connected through the conductive particles.
In the above mentioned conventional connecting and bonding method, if the amount of the conductive particles for electrically connecting between the electrode pads and the corresponding electrode terminals becomes much, a short-circuit or a current leakage will occur between adjacent electrode pads and between adjacent electrodes. In order to avoid this problem, if the amount of the conductive particles is reduced, a connection resistance will not only increase but also vary. In ultimate cases, the electrode pads and the corresponding electrode terminals to be connected to each other remain in an electrically opened condition. This is a serious defect which will cause a malfunction of the devices. In addition, this inclination will become remarkable more and more with a recent microminiaturization of connection sizes.

Anisotropic conductive material and method for connecting integrated circuit element by using the anisotropic conductive material


There is provided an imager sensor including a semiconductor substrate, a plurality of photodiode regions arranged on the semiconductor substrate in row and column directions, a plurality of charge transfer regions each disposed at a space between the photodiode regions in the row direction, the charge transfer regions transferring in the row direction signal charges generated from the photodiode regions, and an electrically conductive photoshield film covering the charge transfer regions therewith. Each of the charge transfer regions includes at least three independent transfer electrodes per a photodiode region. At least one of the three independent transfer electrodes is surrounded by the photodiode region to thereby have an isolated island shape, the rest of the transfer electrodes extend through a space between the photodiode regions in the column direction, and make electrical connection with a bus line disposed outside the semiconductor substrate. The electrically conductive photoshield film makes electrical connection with both the island-shaped transfer electrodes and the bus line. The image sensor has the less number of steps and more excellent optical characteristics than conventional ones.

1. Field of the Invention
The invention relates to a progressive-scan image sensor used for a computer inputting camera and a digital still camera, and also to a method of driving the same.
2. Description of the Related Art
In recent years, an image-inputting device such as a computer inputting camera and a digital still camera has been actively developed. Since an image sensor used for such an image inputting device is required to have images having high vertical resolution by single exposure, it is preferable to adopt a progressive-scan type in place of an interlace type for scanning a screen. A progressive-scan image sensor is designed to include at least three independent transfer electrodes per a unit pixel in order to read out signal charges in all pixels at a time. In a conventional method, at least three-phase driving pulse signals are applied to those transfer electrodes.
An example of a progressive-scan image sensor is found in "A 1/2-in 330K Progressive-Scan CCD Image Sensor with Square-Pixel", K. Nakashima et al., ITE Technical Report, Vol. 18, No. 67, pp. 7-12, November 1994, or in "A 1/3-inch 330K Square-Pixel Progressive-Scan IT-CCD Image Sensor", T. Okutani et al., 1995 ITE Annual Convention, pp. 93-94. As described in those reports, an image sensor is characterized to have a transfer electrode comprised of a three-layered gate electrode film.
Another example of a progressive-scan image sensor has been suggested in Japanese Patent Publication No. 8-21705. The suggested progressive-scan image sensor is a charge coupled type image sensor where a transfer electrode is designed to have an island shape, and an electrically conductive wiring is connected to the island-shaped transfer electrode.
Hereinbelow is explained the firstly mentioned conventional progressive-scan image sensor with reference to FIGS. 1A to 1C. FIG. 1A is a schematic view illustrating the firstly mentioned conventional progressive-scan image sensor, FIG. 1B is a cross-sectional view taken along the line IB--IB, and FIG. 1C is a cross-sectional view taken along the line IC--IC in FIG. 1A.
The illustrated image sensor is of an interline type image sensor comprising photodiode regions 610, and charge transfer regions 611 for reading signal charges photoelectrically converted in the photodiode regions 610, and transferring the thus photoelectrically converted signal charges in a vertical transfer direction X1. The photodiode regions 610 are spaced away from one another in the direction X1. Hereinafter, spaces formed between the photodiode regions 610 in the direction X1 are referred to as connection portions 612.
Each of transfer electrodes is comprised of three layers per a pixel. Namely, as illustrated in FIGS. 1B and 1C, transfer electrodes 621, 622 and 623 comprised of first, second and third layers, respectively, are formed on a semiconductor substrate 625 in the charge transfer regions 611 and the connection portions 612 with a gate insulating film 626 sandwiched between the transfer electrodes 621, 622, 623 and the semiconductor substrate 625.
Between the transfer electrodes 621, 622 and 623 are formed an interlayer insulating film 641 such as a thermal oxide film. All the transfer electrodes 621, 622 and 623 extend through the connection portions 612, and make electrical connection with a bus line (not illustrated) disposed around the semiconductor substrate 625.
When charges are transferred, a first phase driving pulse .phi.1 is applied to the transfer electrode 621 made of the first layer, a second phase driving pulse .phi.2 is applied to the transfer electrode 622 made of the second layer, and a third phase driving pulse .phi.3 is applied to the transfer electrode 623 made of the third layer. When a signal charge is read out from the photodiode region 610 to the charge transfer region 611, a read-out pulse .phi.TG in addition to a driving pulse is applied to one of the three transfer electrodes 621, 622 and 623, for instance, to the transfer electrode 622 made of the second layer.
As illustrated in FIGS. 1B and 1C, the three transfer electrodes 621, 622 and 623 and the semiconductor substrate 625 are covered with an interlayer insulating film 642 such as a thermal oxide film and an oxide film formed by chemical vapor deposition (hereinafter, referred to simply as "CVD"). In addition, a photoshield film 624 is formed on the interlayer insulating film 642 above the transfer electrodes 621, 622 and 623 for preventing lights from directly entering the charge transfer regions 611. As illustrated in FIG. 1C, the photoshield film 624 is formed with openings 628 between the transfer electrodes 621, 622 and 623 in the direction X1. The photoshield film 624 is grounded, or is designed to be fixed at a certain voltage, and has a function of only preventing lights from passing therethrough.
Thus, the firstly mentioned conventional progressive-scan image sensor has provided a three-layered electrode, three-phase driving type progressive-scan image sensor.
Hereinbelow is explained the secondly mentioned conventional progressive-scan image sensor with reference to FIGS. 2A to 2C. FIG. 2A is a schematic view illustrating the secondly mentioned conventional progressive-scan image sensor, FIG. 2B is a cross-sectional view taken along the line IIB--IIB, and FIG. 2C is a cross-sectional view taken along the line IIC--IIC in FIG. 2A.
The illustrated image sensor is of an interline type image sensor comprising photodiode regions 710, and charge transfer regions 711 for reading signal charges photoelectrically converted in the photodiode regions 710, and transferring the thus photoelectrically converted signal charges in a vertical transfer direction X1. The photodiode regions 710 are spaced away from one another in the direction X1. Hereinafter, spaces formed between the photodiode regions 710 in the direction X1 are referred to as connection portions 712.
Each of transfer electrodes is comprised of four sections per a pixel. Namely, as illustrated in FIGS. 2B and 2C, a transfer electrode 721 made of a first layer, transfer electrodes 722a and 722b made of a second layer, and a transfer electrode 723 made of a third layer are formed on a semiconductor substrate 725 in the charge transfer regions 711 and the connection portions 712 with a gate insulating film 726 sandwiched between the transfer electrodes 721, 722a, 722b, 723 and the semiconductor substrate 725.
Between the transfer electrodes 721, 722a, 722b and 723 are formed interlayer insulating films 741 such as a thermal oxide film. All the transfer electrodes 721, 722a, 722b and 723 extend through the connection portions 712, and make electrical connection with a bus line (not illustrated) disposed around the semiconductor substrate 725.
When charges are transferred, a first phase driving pulse .phi.1 is applied to the transfer electrode 721 made of the first layer, a second phase driving pulse .phi.2 is applied to the transfer electrode 722a made of the second layer, a third phase driving pulse .phi.3 is applied to the transfer electrode 723 made of the third layer, and a fourth phase driving pulse .phi.4 is applied to the transfer electrode 722b made of the second layer. When a signal charge is read out from the photodiode region 710 to the charge transfer region 711, a read-out pulse .phi.TG in addition to a driving pulse is applied to one of those four transfer electrodes 721, 722a, 722b and 723, for instance, to the transfer electrode 723 made of the third layer.
As illustrated in FIGS. 2B and 2C, the four transfer electrodes 721, 722a, 722b and 723 and the semiconductor substrate 725 are covered with an interlayer insulating film 742 such as a thermal oxide film and an oxide film formed by CVD. In addition, a photoshield film 724 is formed on the interlayer insulating film 742 above the transfer electrodes 721, 722a, 722b and 723 for preventing lights from directly entering the charge transfer regions 711. As illustrated in FIG. 2C, the photoshield film 724 is formed with openings 728 between the transfer electrodes 721, 722a, 722b and 723 in the direction X1. The photoshield film 724 is grounded, or is designed to be fixed at a certain voltage, and has a function of only preventing lights from passing therethrough.
Thus, the secondly mentioned conventional progressive-scan image sensor has provided a three-layered electrode, four-phase driving type progressive-scan image sensor.
Hereinbelow is explained the thirdly mentioned conventional progressive-scan image sensor with reference to FIGS. 3A to 3C. FIG. 3A is a schematic view illustrating the thirdly mentioned conventional progressive-scan image sensor, FIG. 3B is a cross-sectional view taken along the line IIIB-IIIB, and FIG. 3C is a cross-sectional view taken along the line IIIC-IIIC in FIG. 3A.
The illustrated image sensor is of an interline type image sensor comprising photodiode regions 810, and charge transfer regions 811 for reading signal charges photoelectrically converted in the photodiode regions 810, and transferring the thus photoelectrically converted signal charges in a vertical transfer direction X1. The photodiode regions 810 are spaced away from one another in the direction X1. Hereinafter, spaces formed between the photodiode regions 810 in the direction X1 are referred to as connection portions 812.
Each of transfer electrodes is comprised of three sections per a pixel. Namely, as illustrated in FIGS. 3B and 3C, transfer electrodes 821h and 821i made of a first layer and a transfer electrode 822j made of a second layer are formed on a semiconductor substrate 825 in the charge transfer regions 811 and the connection portions 812 with a gate insulating film 826 sandwiched between the transfer electrodes 821h, 821i, 822j and the semiconductor substrate 825.
Between the transfer electrodes 821h, 821i and 822j is formed an interlayer insulating film 841 such as a thermal oxide film. The transfer electrode 822j made of the second layer is surrounded by the photodiode regions 810, and is pattered in the form of an island. The transfer electrodes 821h and 821i other than the island-shaped transfer electrode 822j extend through the connection portions 812, and make electrical connection with a bus line (not illustrated) disposed around the semiconductor substrate 825.
There is formed an electrically conductive wiring layer 830 over the transfer electrodes 821h, 821i and 822j in the direction X1. The electrically conductive wiring layer 830 makes electrical connection with the above-mentioned bus line, and further with the island-shaped transfer electrode 822j through a contact hole 827.
When charges are transferred, a first phase driving pulse .phi.1 is applied to the electrically conductive wiring layer 830 and hence the island-shaped transfer electrode 822j made of the second layer, a second phase driving pulse .phi.2 is applied to the transfer electrode 821i made of the first layer, and a third phase driving pulse .phi.3 is applied to the transfer electrode 821h made of the first layer. When a signal charge is read out from the photodiode region 810 to the charge transfer region 811, a read-out pulse .phi.TG in addition to a driving pulse is applied to one of the three transfer electrodes 821h, 821i and 822j, for instance, to the transfer electrode 822j through the electrically conductive wiring layer 830.
Since the electrically conductive wiring 830 is formed only for the purpose of applying driving pulses to the transfer electrodes, the electrically conductive wiring 830 does not have a function of completely preventing lights from entering the charge transfer regions 811. In an interline transfer type image sensor, a photoshield film 824 has to be formed covering the charge transfer regions 811 therewith in order to prevent lights from directly entering the charge transfer regions 811. Accordingly, there has to be formed the photoshield film 824 over the electrically conductive wiring layer 830 in the thirdly mentioned conventional image sensor, as illustrated in FIGS. 3B and 3C.
The thirdly mentioned conventional image sensor has to have totally four films, similarly to the firstly and secondly mentioned conventional image sensors: first and second layers for forming the transfer electrodes 821h, 821i and 822j thereof; a layer for forming the electrically conductive wiring layer 830 for applying driving pulses to the island-shaped transfer electrode 822j; and the photoshield film 824 for preventing lights from entering the photodiode regions 810.
As mentioned above, the conventional progressive-scan image sensors include totally four films. Specifically, the firstly and secondly mentioned image sensors include three films for forming transfer electrodes thereof and a film for forming a photoshield film thereof, and the thirdly mentioned image sensor includes two films for forming transfer electrodes thereof, a film for forming an electrically conductive wiring layer, and a film for forming a photoshield film thereof. The four-film structure causes problems as follows.
The first problem is as follows. The four-film structure causes an enormous interlayer capacity, which is accompanied of higher power consumption in charge transfer regions. Herein, power consumption is defined as CV.sup.2 f wherein C indicates a parasitic capacity of a transfer electrode, V indicates a driving voltage, and f indicates a driving frequency.
The second problem is as follows. The increased interlayer capacity causes driving pulses applied to transfer electrodes and a read-out pulse to become dull in a waveform thereof in accordance with a time constant defined as a product C.times.R where C indicates a parasitic capacity of a transfer electrode, and R indicates a resistance of a transfer electrode. This in turn causes a problem that improper transfer and/or incorrect read-out tends to occur.
The third problem is an increase in smear. As a cell becomes smaller in size, an aspect ratio becomes greater, and as a result, apparent steps also become larger. Hence, smear would be increased due to deterioration in sensitivity caused by improper light-collection and further due to reflection and diffusion of incident lights.
The fourth problem is as follows. As the steps become larger, it would become difficult to properly form transfer electrodes and a photoshield film. This causes a problem that transfer electrodes and a photoshield film tend to be short-circuited, resulting in a problem of reduction in a fabrication yield of a device.
The fifth problem is as follows. As the steps become larger, it would be difficult to properly form an on-chip color filter and/or an on-chip micro-lens formed subsequently formation of a photoshield film. This causes reduction in sensitivity, non-uniformity in sensitivity in a plane of a chip, and color mixture among pixels.
The sixth problem is that since there has to be formed at least totally four films, three films for forming transfer electrodes and a film for forming a photoshield film, the greater number of fabrication steps have to be carried out, resulting in an increase in fabrication costs.

Charge coupled device image sensor and method of driving the same


A nitrous acid salt is added at a temperature of 10 to 80° C. to an aqueous solution which contains an optically active 2-aminocarboxylic acid (4) and a protonic acid, the amount of the latter acid being 1 to 3 equivalents to the former, and which has a proton concentration of 0.5 to 2 mol/kg to conduct a reaction to thereby produce an optically active 2-hydroxycarboxylic acid (1). Thionyl chloride and a basic compound are caused to act on the compound (1) to chlorinate it and simultaneously invert the configuration in the 2-position. Thus, an optically active 2-chlorocarboxylic acid chloride (5) is induced. The compound (5) is hydrolyzed to induce an optically active 2-chlorocarboxylic acid (2). The compound (2) is reacted with a thioacetic acid salt to incorporate an acetylthio group thereinto and simultaneously invert the configuration in the 2-position to thereby produce an optically active 2-acetylthiocarboxylic acid (3).

Optically active 2-hydroxycarboxylic acids represented by the general formula (1):
(wherein R1 represents a substituted or unsubstituted alkyl group containing 1 to 12 carbon atoms, a substituted or unsubstituted aryl group containing 6 to 14 carbon atoms or a substituted or unsubstituted aralkyl group containing 7 to 15 carbon atoms) are important intermediates in the production of pharmaceuticals (for example, Biosci. Biotech. Biochem., 60 (8), 1279–1283, 1996) and, for the production thereof, the following methods are known, among others:    (i) L-Phenylalanine hydrochloride is prepared by treating L-phenylalanine with concentrated hydrochloric acid in chloroform and, then, (2S)-2-hydroxy-3-phenylpropionic acid is synthesized by treating an aqueous solution (proton concentration 1.4 mol/kg) containing L-phenylalanine and 4 equivalents, relative to L-phenylalanine, of a protonic acid (hydrochloric acid and sulfuric acid) with an aqueous solution containing 2 moles of sodium nitrite per mole of L-phenylalanine at 0° C. for 3 hours. After the reaction, the (2S)-2-hydroxy-3-phenylpropionic acid is recovered as crystals by ether extraction, dehydration, ether extract concentration and treatment of the residue with benzene (isolation yield 40%) (J. Amer. Chem. Soc., 86, 5326–5330, 1964);    (ii) (2S)-2-Hydroxy-3-phenylpropionic acid is synthesized by adding 4 moles, per mole of L-phenylalanine, of solid sodium nitrite to an aqueous solution (proton concentration 2.1 mol/kg) containing L-phenylalanine and 4 equivalents, relative to L-phenylalanine, of a protonic acid (sulfuric acid) at 0° C. over 5 hours, gradually warming the mixture to room temperature and stirring the same overnight. After the reaction, the (2S)-2-hydroxy-3-phenylpropionic acid is recovered as crystals by two or more times of extraction with ethyl acetate, washing of the extract with a saturated aqueous solution of sodium chloride, dehydration of the same over magnesium sulfate, concentration of the ethyl acetate solution and crystallization by addition of hexane (isolation yield 50%) (J. Heterocyclic Chem., 29, 431–438, 1992).
However, check experiments made by the present inventors concerning the above method (i) revealed that the method has such problems as the use of chloroform and benzene, which are highly toxic organic solvents, and the very low reaction yield (42%).
Checking of the above method (ii) by experiment revealed such problems as procedure complicatedness and increased capacity requirement, as resulting from the use of solid sodium nitrite and of large amounts of organic solvents and inorganic salts. It was also revealed that the reaction yield itself is low, namely 65%. In Biosci. Biotech. Biochem., 60 (8), 1279–1283, 1996, it is noted to the effect that the above method (ii) allows the formation, as a byproduct, of a large amount of a related substance (cinnamic acid) and accordingly gives a low yield, hence it is very difficult to employ that method on a commercial scale.
Further, it was revealed that the above methods (i) and (ii) still have another problem in that the optical purity is reduced by the formation of a considerable amount of the optical isomer (2R)-2-hydroxy-3-phenylpropionic acid as a byproduct as a result of racemization.
With such a background, alternative methods of producing optically active 2-hydroxy-3-phenylpropionic acid have been made, for example the method comprising asymmetric reduction of racemic 2-hydroxy-3-phenylpropionitrile using a microorganism (e.g. Biosci. Biotech, Biochem., 60 (8), 1279–1283, 1996 and JP-A 6-237789). These method are, however, not entirely favorable since the cyano compound to be used is highly toxic, the productivity is low and, further, no satisfactory optical purity can be obtained.
As for the production of optically active carboxylic acids substituted by a chlorine atom in the 2-position, which are represented by the general formula (2):
(wherein R1 is as defined above) the following are known in the art:    (i) The method comprising using an amino acid as a starting material and chlorinating the same using sodium nitrite while retaining the configuration thereof (Liebigs Ann., 1907, 357, 1); and    (ii) The method comprising chlorinating a 2-hydroxycarboxylic acid ester with configurational inversion (JP-A 61-57534).
However, the method (i) indeed gives a 2-chlorocarboxylic acid whose configuration at 2-position is (S) when a naturally occurring L-amino acid is used as the starting material but, for producing a 2-chlorocarboxylic acid whose configuration at 2-position is (R), it requires the use of a non-natural D amino acid, which is expensive, as the starting material, hence it has its limit as a method of producing (R)-2-chlorocarboxylic acids.
As for the method (ii), it is necessary to derivatize a 2-hydroxycarboxylic acid into a 2-hydroxycarboxylic acid ester, chlorinate the same with configurational inversion and then derivatize the chlorination product into a 2-chlorocarboxylic acid by hydrolysis. Thus, a number of steps have to be required and the method is not efficient.
Further, optically active 2-acetylthiocarboxylic acids represented by the general formula (3):
(wherein R1 is as defined above) are important intermediates in the production of pharmaceuticals (e.g. as intermediates of antihypertensive agents; cf. JP-A 8-337527). For the production thereof, the following are known in the art:    (i) The method comprising thioacetylating a non-natural D-amino acid via configuration-retaining bromination (JP-A 8-337527 etc.);    (ii) The method comprising optical resolution of a racemic 2-acetylthiocarboxylic acid (JP-A 6-56790);    (iii) The method comprising hydrolyzing a thiazoline compound by means of a microorganism (JP-A 11-192097); and    (iv) The method comprising stereoseletively reducing a di-substituted acrylic acid derivative by means of a microorganism (JP-A 11-196889).
However, for producing an (S) form, the method (i) requires the use of an expensive non-natural D-amino acid as the starting material, hence it has its limit as a method of producing (S) forms.
The method (ii) lies in optical resolution of racemic 2-acetylthiocarboxylic acids, hence is not so efficient but has a problem from the industrial utilization viewpoint.
The method (iii) requires a separate procedure for increasing the optical purity since the 2-thiocarboxylic acid derivative obtained by hydrolysis of the thiohydantoin derivative has an optical purity as low as 82% ee. Thus it has a problem from the industrial utilization viewpoint.
The method (iv) is low in yield of asymmetric reduction of mercaptoacrylic acid derivative, namely 60 to 70% and, further, the 2-thiocarboxylic acid derivative obtained has an optical purity as low as 90% ee. Thus it has problems from the industrial utilization viewpoint.

Process for producing optically active carboxylic acid substituted in 2-position


A CPU 111m segments the jobs from each of the volume rendering processing on hand, prioritize processing sequence for each job, transmits one job which has reached the processing order to the computers (21 to 2k) on the accepting side and other computers equivalent to the self computer simultaneously, and executes the job for self processing. Then, after if receiving the processing result from the computer which has completed the processing of the transmitted job the earliest, the CPU 111m issues a halt command of the job to other computers on the accepting side. At this time, if any job to be requested on hand remains uncompleted, a series of processing procedures starting with the simultaneous communication is repeated.

1. Field of the Invention
The present invention relates to an image processing system for volume rendering, and more particularly to an image processing system for performing a volume rendering image processing or a region segmentation processing, using a plurality of computers connected via a network.
2. Description of the Related Art
With the development of an image processing technique using the computer, the appearance of CT (Computed Tomography) scanner and MRI (Magnetic Resonance Imaging) that enables an internal structure of the human body to be directly observed has brought about innovation in the medical field. A medical diagnosis using a tomographic image of the living body has been widely performed. In recent years, as a technique for visualizing the three dimensional structure inside the complex human body which is difficult to recognize only with the tomographic image, for example, a processing technique for directly drawing an image of the corresponding three dimensional structure from the three dimensional digital data of the object obtained from CT scanner or other image acquiring system, particularly an image processing called the volume rendering, has widespread, and has been employed for medical diagnosis.
Conventionally, a ray casting has been well known as a superior method for volume rendering. The ray casting is a method for forming an transparent image of the three dimensional structure inside the object by radiating virtual rays from a virtual starting point to the object, and forming the image of a virtual reflected light which comes from inside the object on a virtual projection plane. A fundamental theory of the ray casting is described in "Introduction To Volume Rendering", written by Barthold Lichtenbelt, Randy Crane, and Shaz Naqvi, Hewlett-Packard Professional Books (published in 1998), Chapter 6, pg. 121-138, for example.
Herein, the ray casting is briefly described.
A minute unit area forming a constituent unit of the three dimensional area of the object is called a voxel, and the intrinsic data of the voxel representing the characteristic such as a density value is called a voxel value. The entire object is represented by the voxel data which is the three dimensional array of the voxel values. Usually, two dimensional tomographic image data obtained by CT scanner or other image acquiring system is layered along a direction perpendicular to a tomographic face, and interpolated, as required, whereby the voxel data of the three dimensional array is obtained.
A virtual reflected light from the virtual rays radiated from the virtual starting point to the object is produced in accordance with opacity, an opacity value, which is artificially set by the voxel value. Moreover, in order to shade a virtual surface stereoscopically, a gradient of the voxel data, that is a normal vector, is obtained, and the shading factor for shading is calculated from the cosine of an angle between the virtual ray and the normal vector. The virtual reflected light is calculated by multiplying the intensity of the virtual rays radiated to the voxel by the opacity of voxel and the shading factor. The virtual reflected light is integrated along the virtual rays, and calculated for all the coordinate points on the virtual projection plane, whereby the virtual transparent image of three dimensional structure is formed. The above calculation is hereinafter referred to as a "volume rendering process".
A volume rendering image obtained as described above is a three dimensional color image drawn by using a number of volume rendering parameters for the subject voxel data.
The volume rendering parameters include the display control information such as enlargement ratio, angle and position, the color designation information, the correspondence information between the voxel value and the opacity value, the shading information, an image filter, an image synthesis method, a rendering means, a light source, a time series and phase information, a projection method, a display area information, and a segmented area information. These pieces of information are referred to as the "additional information" in the following.
In the practical medial diagnosis, the user of a medical image processing system observes the volume rendering image from various points of view by successively updating the settings of the volume rendering parameters, which is an additional information, for the subject voxel data. For example, since the adequate opacity value varies according to a diagnosis object, the user sets up the opacity value for each voxel data. Also, in order to easily observe an area of interest such as a diseased part, the peripheral tissue obstructing the observation is removed, and the appropriate color of tissue is set.
Besides, it is necessary for the user to set the parameters by performing various complicating operations. If the appropriate parameters are set and the volume rendering image which meets the diagnosis purpose is obtained, an edit operation is ended.
Conventionally, the total process of image processing of volume rendering, including storage, calculation and display, is performed by one or more computers. Especially when a plurality of computers are employed, various measures are taken mainly for the distribution of computer resources requiring an enormous amount of computation and the parallel processing.
Also, various methods for distributing the total process of image processing of volume rendering over a plurality of computers have been offered (e.g., refer to JP-A-2003-233600).
In the conventional volume rendering image processing system, various measures are taken for the distribution of computer resources and the parallel processing, as previously described.
However, in the volume rendering which requires a large amount of computation at high precision and in real time, there is a limit if the total computation is performed by the computer resource of one computer.
Thus, when a plurality of computers is employed, it is required that the volume rendering processing is partitioned beforehand into appropriate jobs, which is equal to loads, so as to make the plurality of computers execute distributed processing. Generally, its management is very difficult, and may cause an overhead, which lowers the system efficiency in the worst case.
Particularly, even though the load information and resource use situation of the plurality of computers are collected beforehand to assign the jobs fairly, it is not easy to predict the end time.

Image processing system for volume rendering


This invention teaches a thermally insulated handsock for a golfer's hand for personal comfort when the golfer moves between consecutive golf shots during cold weather golfing, and further can be reliably secured to the golf bag, pull cart handle or riding cart steering wheel where the hand would normally be placed and needed in carrying the golf bag or pulling or steering the golf cart to remain stored in substantially the same place and orientation thereon when not being worn, as with the hand removed therefrom during a golf shot. The term handsock is used as there is no separate thumb pocket or contour, much like a sock, intended to fit over the golfer's hand (bare or with a golf glove thereon) including the thumb, to a depth with end opening possibly beyond the wrist. Paired tabs, with mating Velcro hook-loop fasteners thereon, generally at the palm region of the pocket and extended in line with the hand pocket, operate to secure the handsock in the operative position as needed with or without the hand being therein.

Many golfers stop playing golf when the outdoor temperatures drop to where keeping warm requires as much effort as swinging the clubs. This would be under 60.degree. F. for some, under 50.degree. F. for still others, or possibly not until the course is frozen solid or snow covered for the truly dedicated.
One overriding reason for discomfort is that cold tempertures mean cold hands, as most golfers prefer playing bare handed or with only thin golf gloves, for properly gripping and feeling the club. Having separate gloves to wear between shots is possible, but not real convenient or effective: first in putting them on and taking them off for every shot, and second in keeping track of them when off (on the ground or stuffed in your pocket, particularly if they are warm but bulky).
For example, an average golfer might take fifty shots from a tee or fairway lie, each requiring the selection of a specific club and a golf swing, and then requiring the movement of self and bag from that location on to the next lie. Each swing might take but seconds, and having the hands bare or in golf gloves can be tolerated for this duration as a condition of the sport. However, such needed self and bag movement to a next lie might take several minutes, when one's hands can get real cold. One's clothing pockets can provide a refuge from the cold, immediately before and after a shot, and for one hand during the needed self and bag movement. However, the hand rested on and stabilizing a shoulder carried bag or used for gripping a pull cart handle or a riding cart steering wheel remains exposed outside of all clothing pockets.
Once the hands are cold, the club becomes difficult to feel and grip, and the body becomes chilled for added discomfort.


A hard magnetic material of the present invention contains Fe as a main component and further contains elements R and L, and B. Not less than 60% of the structure of the hard magnetic material is composed of a fine crystalline phase having an average grain size of not more than 100 nm and the rest is composed of an amorphous phase. The fine crystalline phase essentially consists of bcc-Fe and contains at least R.sub.2 Fe.sub.14 B.sub.1.

1. Field of the Invention
The present invention relates to a hard magnetic material and a method of producing such a material, which hard magnetic material essentially consists of Fe and exhibits excellent magnetic characteristics over a wide composition range.
2. Description of the Prior Art
Although production costs of generally used ferrite magnets are low, the magnetic characteristics thereof are unsatisfactory. Quenched Nd--Fe--B magnets are known to have superior magnetic characteristics to ferrite magnets. In addition, new types of alloy magnets such as Sm-Fe-N magnets have been investigated for achieving more superior characteristics.
However, for example, according to the above quenched Nd--Fe--B magnets, it is difficult to reliably produce a hard magnetic material having excellent magnetic characteristics. This is because in spite of superior magnetic characteristics to the ferrite magnets, the quenched Nd--Fe--B magnets, which are prepared by quenching to form an amorphous phase and then heat-treated to precipitate a fine crystalline phase, cannot form a single amorphous phase after quenching. Thus, the crystalline structure formed by heat treatment readily becomes uneven.

11-806 Kawauchijutaku, 35banchi, Motohasekura, Kawauchi, Aoba-ku


An insulated-gate field effect transistor with the structure capable of weakening an electric field near or around the drain thereof. To this end, the transistor of the top gate type has its gate electrode which is formed of two kinds of metal layers (4, 5) capable of being anodized while carefully selecting materials and anodization process conditions in such a way as to let anodization of the lowermost metal layer (4) be faster in progress than that of its overlying metal layer (5). This ensures that an intensity-decreased electric field is applied to a portion (20) underlying an anodized part of the lower metal layer not only through a gate insulation film (3) but also through an anodized oxide (17). A weak inversion layer as created by this electric field may cause the electric field to decrease in intensity near or around the drain.

1. Field of the Invention
The invention as disclosed relates to a device and manufacturing method for semiconductor devices and specifically devices having an insulated gate electrode.
2. Description of the Prior Art
As microfabrication causes insulated-gate field effect transistors to decrease in size, a potential difference near the drain rapidly increases. This could result in electrons or holes ("hot carriers") that have been accelerated by such potential difference to exhibit bad behavior. This in turn leads to several problems. This problem becomes more serious especially for the so-called "submicron" devices with channel lengths less than or equal to one micrometer (.mu.m).
In those transistors (thin-film transistors, for example) employing certain semiconductor materials with grain boundaries such as polycrystalline semiconductor, the potential-difference increase might also increase leakage current upon application of a reverse bias voltage to the gate electrode (in the turned-off state). To avoid this, it should be required that the near-the-drain potential difference be decreased or "moderated". Several types of insulated-gate field effect transistors of different structures have been proposed for this purpose.
One typical transistor structure shown in FIG. 3A is generally known as the offset gate type which is structured in a manner such that it has a source 32 and drain 33 with an intrinsic (or of the opposite conductivity type to that of the source/drain) semiconductor layer (active layer) 31 being laid between them. This system also has a gate electrode 35 overlying an active layer 31 with a gate insulation film 34 being sandwiched therebetween them. The gate electrode 35 is laterally spaced apart from the drain 33 by a predefined distance x.sub.1. An electric field as created near the drain is weakened or moderated enabling elimination of hot carriers' contribution.
Another prior known transistor structure is shown in FIG. 3B. This is called the lightly-doped drain (LDD) structure and is disclosed in Examined Published Japanese Patent Application No. 3-38755. An impurity concentration-reduced region (lightly doped impurity region) 37 is provided between the drain 33 and active layer 31. This region is the same in conductivity type as drain 33. A similar lightly doped impurity region 36 may also be provided between the source 32 and active layer 31. With such an arrangement, the lightly doped region 37 acts as a buffer region which may weaken the electric field near the drain.
The offset gate structure may be successfully fabricated by anode-oxidization or "anodization" of the gate electrode as described in Unexamined Published Japanese Patent Application Nos. 6-338612, 7-226515. As shown in FIG. 3C, the gate electrode is located spaced from the source/drain by a selected distance corresponding to the thickness x.sub.2 of an anodized oxide 38. This effectively performs a self-alignment doping process using the anodized oxide 38, by letting the gate electrode be anodized at its side wall for formation of the source 32 and drain 33.
Similarly, the lightly doped impurity region may also be fabricated successfully by anodizing the gate electrode as taught from Unexamined Published Japanese Patent Application No. 7-169974. While a detailed explanation is omitted herein, this approach makes it possible to define intended lightly doped regions 36, 37 which are approximately equal in width to the resultant anodized oxide as formed by anodization of the side wall of the gate electrode. Further, Unexamined Published Japanese Patent Application No. 7-169974 discloses therein a transistor structure, wherein the gate electrode 35 is far from the lightly doped regions 36, 37 by a specific distance equivalent to the thickness x.sub.3 of an anodized oxide 39 covering the gate electrode 35 in a strict sense, as shown in FIG. 3D.
While the offset gate structure is a simple and easy-to-fabricate structure, it unfortunately remains less effective at electric field reduction. In contrast, the LDD structure has a significant electric-field reduction effect, but suffers from the necessity of performing additional doping processes. A structure has been proposed as one approach to avoiding these problems, which permits formation of an intended region capable of exhibiting similar functions as those of the lightly-doped drain. This structure applies an electric field thereto as shown in FIG. 4 rather than by doping impurities thereinto. The offset structure of the field effect type as suggested by Examined Published Japanese Patent Application No. 8-17238.
As apparent from viewing FIG. 4, this field-effect offset gate transistor has a source 42, drain 43, active layer 41, gate insulation film 44 and gate electrode 45. The gate electrode 45 is spaced apart from drain 43, thereby providing the offset gate structure and wherein a second gate electrode 40 is provided overlying this part with a dielectric layer 49 being sandwiched therebetween. The dielectric layer 49 may be made of a chosen dielectric material obtainable by anodization of gate electrode 45.
In this structure, the drain is of N type conductivity. A positive bias voltage is applied to the second gate electrode 40 forming a weak inversion layer at a part 47 underlying the second gate electrode 40. Since this is similar in function to drains of lightly doped or "weak" N type conductivity, the region 47 exhibits similar effects to lightly-doped drains. If the source and drain are of P type conductivity, then the voltage applied to the second gate electrode is potentially reversed into the negative polarity.
While the structure discussed above requires no additional doping processes for formation of the lightly-doped impurity region, this does not come without accompanying a penalty: it does require additional formation of the second gate electrode 40, which in turn increases complexity of the fabrication process thereby making it impossible to offer advantages over the prior art LDD transistor structures.

Semiconductor device with insulated gate electrode configured for reducing electric field adjacent drain

Semiconductor Energy Laboratory Co., Ltd.


Exemplary methods and systems relate to telepresence at mobile devices. In one example the method can be performed on the mobile device. The mobile device can determine real-time availability of resources. The mobile device can further determine the composition of the telepresence session. The mobile device can further communicate the determined composition of telepresence data to a remote server. The mobile device can further receive telepresence data and perform a portion of the telepresence session data. Additionally, the present system can be configured to operate on a server or other electronic device.

1. Field
The following relates to data-enabled mobile devices, such as data-enabled mobile phones, digital assistants, smartphones, and more particularly to enabling telepresence on mobile devices.
2. Related Art
Telepresence uses high quality video and audio to enable virtual gatherings. Telepresence typically relies on very high bandwidth connections between fixed points, such as between two telepresence studios. Each telepresence studio is often carefully designed to provide a high quality experience, including carefully controlling for acoustic effects, and lighting. High quality displays, such as full 1080 p displays, are provided, as well as high-definition cameras that include features such as auto-focusing on a current speaker, and switching of a video stream for such focus.
Providing a telepresence experience on a mobile device would be desirable, but remains challenging because of various differences between an environment in which a mobile device operates and the typical telepresence installation.

Methods and systems for mobile telepresence