Improved medical devices and instruments prepared by an improved method of producing hydrophilic, gamma-irradiation induced polymerized and chemically grafted coatings on plastic surfaces of articles adapted for contacting living tissue, the improvement comprising carrying out the graft polymerization in an aqueous solution under specific combinations of the following conditions:. (a) monomer concentration in the range of from about 0.1% to about 50%, by weight; PA1 (b) total gamma dose in the range of from about 0.001 to less than about 0.50 Mrad; and PA1 (c) gamma dose rate in the range of from above about 2,500 to about 10.sup.8 rads/minute.

1. Field of the Invention
The present invention relates to plastic surgical instruments, medical devices, prosthetic cardiovascular implants and implants for hard and soft tissue, contact lenses and the like and methods for improving surfaces thereof.
2. Discussion of the Prior Art
Studies have shown that the surgical implantation of ocular implants such as intraocular lenses (IOL) and the like can result in the loss of significant corneal endothelial tissue unless great care is taken to ensure a lack of contact between the device and the endothelium. Most ocular implants are constructed of hydrophobic polymethylmethacrylate (PMMA) polymers because of their superior optical qualities, resistance to biodegradation and the like. It has been found, however, that PMMA surfaces adhere to endothelial cells upon even casual contact and that separation of the surface therefrom results in a tearing away of the endothelial tissue adhered to the polymer surface. Similar adhesive interactions with other ocular tissues, i.e., the iris, can also cause adverse tissue damage. Other hydrophobic polymers which are used or have been proposed for use in ocular implants (i.e., polypropylene, polyvinylidene fluoride, polycarbonate, polysiloxane) also can adhere to ocular tissue and thereby promote tissue damage.
It is well documented in the prior art that a significant disadvantage inherent in PMMA IOLs resides in the fact that any brief, non-traumatic contact between corneal endothelium and PMMA surfaces results in extensive damage to the endothelium. See Bourne et al, Am. J. Ophthalmol., Vol. 81, pp. 482-485 (1976); Forster et al, Trans. Am. Acad. Ophthalmol. Otolaryngol., Vol. 83, OP-195-OP-203 (1977); Katz et al, Trans. Am. Acad. Ophthalmol. Otolaryngol., Vol. 83, OP-204-OP-212 (1977); Kaufman et al, Science, Vol. 198, pp. 525-527 (1977) and Sugar et al, Arch. Ophthalmol., Vol. 96, pp. 449-450 (1978) for a discussion of the problem associated with implant surface/endothelium contact.
Since it is extremely difficult to avoid any contact between implant surfaces and endothelium during surgical procedures and especially to other sensitive ocular tissues during implant life, i.e., the iris, ciliary sulcus and the like, efforts have been undertaken to modify the PMMA ocular implant surfaces to reduce the tendency thereof to adhere to and damage corneal endothelium.
Ocular implant surfaces have been coated with various hydrophilic polymer solutions or temporary soluble coatings such as methylcellulose, polyvinylpyrrolidone Katz et al, supra, and Knight et al, Chem. Abs., Vol. 92:203547f (1980)! to reduce the degree of adhesion between the implant surfaces and tissue cells. While offering some temporary protection, these methods have not proven entirely satisfactory since such coatings complicate surgery, do not adhere adequately to the implant surfaces, become dislodged or deteriorate after implantation, dissolve away rapidly during or soon after surgery or may produce adverse post-operative complications. Moreover, it is difficult to control the thickness and uniformity of such coatings.
Yalon et al Acta: XXIV, International Congress of Ophthalmology, ed. Paul Henkind (1983)! and Knight et al, supra, have reported attempts to produce protective coatings on PMMA implant surfaces by gamma-radiation induced polymerization of vinylpyrrolidone thereon. Their efforts were not altogether successful, however, since their methods also presented problems in controlling the optical and tissue protective qualities of the coatings. Process conditions and parameters (i.e., monomer concentration solvent, dose and dose rate) were not specified. The resulting coatings were of poor quality and non-uniform mechanical stability.
Gamma-PVP treatment of PTFE has been reported, but under severe process conditions requiring gamma doses above 1 Mrad which are impractical in that both bulk and surface properties of the PTFE are changed Boffa et al, J. Biomed. Mater. Res., Vol. 11, p. 317 (1977)!. Non-aqueous solutions of high monomer concentrations (50% NVP in pyridine) are required at relatively high doses of gamma radiation (1-5 Mrad), resulting in a high degree of grafting, but with extensive changes in the bulk and surface properties of the PTFE since PTFE is readily degraded at gamma doses above 1 Mrad.
In U.S. Pat. No. 4,806,382 issued Feb. 21, 1989, there are described improved methods for producing hydrophilic, gamma-irradiation induced polymerized and chemically grafted coatings on ocular implants constructed of a variety of polymeric materials, which methods overcome the above-noted difficulties and disadvantages.
The invention described in that application is predicated on the discovery of certain process conditions and parameters that produce thin hydrophilic gamma-irradiation induced polymerized and chemically grafted coatings of N-vinyl-pyrrolidone (NVP) PVP!, copolymerized NVP and 2-hydroxyethylmethacrylate (HEMA) P(NVP-HEMA)!, or HEMA PHEMA! and their copolymers, particularly with ionic comonomers on the surfaces of ocular implants constructed of materials including polymethylmethacrylate (PMMA) and of other process conditions and parameters which produce thin gamma-irradiation induced graft PVP, P(NVP-HEMA), PHEMA or copolymer coatings on the surfaces of ocular implant articles constructed of materials including polypropylene (PP), polyvinylidene fluoride (PVDF), polycarbonate (PC) and polysiloxane (PDMSO) or silicone (PSi). The coatings increase the hydrophilicity of the implant surface and minimize adhesion between the surface and sensitive ocular tissues such as corneal endothelium or iris thereby minimizing tissue damage and post-operative complications occasioned by contact between the implant surface and ocular tissue. The coatings produced by the improved method of the invention described in U.S. Pat. No. 4,806,382 are thin and reproducibly uniform. Moreover, they are chemically bound to the surface of the ocular implant and, therefore, far more durable and less subject to removal, degradation or deterioration during or following surgery than the coatings produced by prior art methods.
The improved gamma-irradiation induced graft polymerization of NVP, HEMA or mixtures of NVP and HEMA on ocular implant surfaces comprising PMMA to form optimum PVP, P(NVP-HEMA) or PHEMA graft polymer surface modifications thereon described in U.S. Pat. No. 4,806,382 comprises carrying out the graft polymerization in an aqueous solution under specific combinations of the following conditions:
(a) monomer concentration in the range of from about 0.5 to about 50%, by weight; PA1 (b) total gamma dose in the range of from about 0.01 to about 0.50 Mrad; PA1 (c) gamma dose rate in the range of from about 10 to about 2,500 rads/minute; and PA1 (d) maintaining the molecular weight of the polymer in solution in the range of from about 250,000 to about 5,000,000. PA1 (e) substantially excluding free oxygen from the aqueous graft polymerization solution; PA1 (f) maintaining the thickness of the PVP or P(NVP-HEMA) surface graft in the range of from about 100 .ANG. to about 150 microns; PA1 (g) including a free radical scavenger in the aqueous graft polymerization solution; and PA1 (h) including in the aqueous graft polymerization solution a swelling solvent for PMMA or other polymer substrate surface. PA1 (a) monomer concentration in the range of from about 0.5 to about 50%, by weight; PA1 (b) total gamma dose in the range of from about 0.01 to about 0.50 Mrad; PA1 (c) gamma dose rate in the range of from about 10 to about 2,500 rads/minute; and PA1 (d) maintaining the molecular weight of the polymer in solution in the range of from about 250,000 to about 5,000,000. PA1 (e) substantially excluding free oxygen from the aqueous graft polymerization solution; PA1 (f) maintaining the thickness of the PVP or P(NVP-HEMA) surface graft in the range of from about 100 .ANG. to about 100 microns; PA1 (g) including a free radical scavenger in the aqueous graft polymerization solution; and PA1 (h) including in the aqueous graft polymerization solution a swelling solvent for PMMA or other polymer substrate surface. PA1 (a) Thin, permanent, optically clear (in the case of contact lenses) and uniform graft coatings. The literature generally discloses conditions which produce distortion and degradation of the substrate due to the use of high gamma-irradiation doses (>1 Mrad) and non-aqueous solvent media, and yield thick, cloudy, non-uniform coatings e.g., Chapiro, Radiation Chemistry of Polymeric Systems, John Wiley and Sons, Inc., New York (1962); Henglein et al, Angew. Chem., Vol. 15, p. 461 (1958)!. PA1 (b) Long-term biocompatibility in vivo. PA1 (c) Low contact angle (high wettability) for water or underwater air bubble (less than about 30.degree.). PA1 (d) Non-adherent to tissue (adhesive force to endothelium less than about 150 mg/cm.sup.2). PA1 (e) Non-damaging to endothelium (less than ca. 20% damage for in vitro contact tests). PA1 (f) Graft coating may be measurable by ESCA or FTIR analysis. PA1 (g) Abrasion resistance by sliding (dynamic) friction testing showing no change in wetting (contact angle) and confirming before and after presence of graft coating. PA1 (h) Rapid hydration--change from dry state to wetted lubricous state on immersion in water (within five minutes). PA1 (a) Monomer concentration: Increasing monomer concentration increases polymer molecular weight in the graft solution and reduces contact angle (C.A.), i.e., renders the surface more hydrophilic. For example, in the case of forming PVP coatings on PMMA, in the range of from about 3-15% NVP, the PVP viscosity molecular weight (M.sub.v) increases from 560,000 to 2,700,000 and the PMMA graft C.A. decreases from 29.degree. to 21.degree. at 0.1 Mrad and 309 rads/minute. However, this effect is sensitive to dose rate and total dose. For example, at 1-10% NVP, but at a lower dose rate of 64 rads/minute, the molecular weight increases from 400,000 to 4,590,000 and the C.A. decreases from 49.degree. to 18.degree.. PA1 (b) Dose: In general, increasing total gamma dose increases molecular weight of the polymer and reduces the contact angle. However, an important practical limit exists in that at higher doses, lower dose rates and higher monomer concentrations, reaction media become extremely viscous or form gels which are very difficult to wash and to remove (e.g., about 0.25 Mrad and 10% NVP at 309 rads/minute). PA1 (c) Dose rate: Decreasing the gamma radiation dose rate, generally increases solution polymer M.W., e.g., from 1,150,000 to 5,090,000 at 10% NVP and 0.1 Mrad as dose rate decreases from 1,235 to 49 rads/minute. The C.A. also goes down at lower dose rates, i.e., from 31.degree. to 15.degree.. It is a feature of the present invention that the gamma dose rate may be increased to 10.sup.8 rads/minute which considerably shortens the time required to carry out the process. PA1 (d) Solution Polymer Molecular Weight: The molecular weight may vary widely depending upon process conditions, monomers and radical inhibitors used. Effective grafting with low C.A. may, therefore, be achieved with even low molecular weight solution polymer (M.sub.v as low as 5,000-10,000). However, solution polymer M.sub.v greater than 5,000,000 or gels which form during grafting are generally less practical because of washing problems. PA1 (e) Degassing: Removal of oxygen from the graft solutions by a vacuum and/or an inert gas (e.g., argon purging) can have an important effect: lower total doses are required (practical grafting at less than 0.1 Mrad). Oxygen degassing also has a significant effect on PVP M.sub.w and % conversion of monomer. For example, with degassing, good grafting of PVP on polypropylene (PP) is achieved at 0.05 Mrad and 10% NVP (C.A. 15.degree.). Without degassing, little grafting occurs under these conditions. Oxygen degassing is critical to hydrophilic surface modification grafting where the substrate polymer is PP, PVDF or PDMSO. It has been found that graft polymerization is inefficient when using these materials as substrates in the presence of oxygen. Oxygen degassing is also beneficial for PMMA and PC substrates in that much lower radiation doses (0.01-0.15 Mrad) become effective compared with grafting these polymers in the presence of oxygen. PA1 (f) Graft thickness: Surface grafts less than 100-200 .ANG., although non-adhesive and hydrophilic, are useful, but may exhibit somewhat less mechanical "softness" or compliant gel-like surfaces than thicker coatings for reduced tissue-contact trauma. Graft coatings greater than ca. 300-500 .ANG. (or 0.03-0.05 microns) up to 50 microns or more are probably more desirable for many applications as long as they are smooth, uniform, optically clear for optic surfaces, and quickly hydrated. PA1 (g) Free-Radical Scavengers: Free-radical traps, usually reducing agents such as Cu.sup.+, Fe.sup.+2, ascorbic acid and the like are known to inhibit radical polymerization in solution and thus be effective (especially at high gamma doses, high dose rates and high monomer concentrations) in slowing the onset of solution gelation during grafting. However, under practical grafting conditions, this may result in lower molecular weights, high concentrations of unreacted monomer and broad molecular weight distributions. Use of metal salts may also be objectionable where maximum biocompatibility is critical. PA1 (h) Swelling solvents: The use of substrate polymer solvents in the aqueous monomer grafting solution facilitates swelling and monomer diffusion into the polymer before and during gamma polymerization. Penetration of monomers into the substrate increases graft coating thickness and enhances bonding to the surface. Solvents such as ethyl acetate have been shown to greatly facilitate this process with some substrates such as PMMA. PA1 (a) For PVP grafts on PP, PVDF and PDMSO, or combinations thereof, pre-soak the substrate in NVP monomer at 60.degree. C. for 4 hours followed by graft polymerization in 10% aqueous NVP with about 0.15 Mrad gamma radiation at about 500 rads/minute dose rate, but also as high as 10.sup.8 rads/minute dose rate. PA1 (b) For PVP grafts on PMMA, PP, PVDF and PDMSO, or combinations thereof, pre-soak the substrate in 40% aqueous NVP monomer at about 60.degree. C. for 4 hours followed by graft polymerization in 10% aqueous NVP with about 0.15 Mrad gamma radiation at about 500 rads/minute dose rate, but also as high as 10.sup.8 rads/minute dose rate. PA1 c) For PVP grafts on PMMA, PDMSO and PC, or combinations thereof, pre-soak the substrate in 40% aqueous NVP monomer at about 60.degree. C. for 12 hours followed by graft polymerization in 10% aqueous NVP with about 0.15 Mrad gamma radiation at about 500 rads/minute dose rate, but also as high as 10.sup.8 rads/minute dose rate.
The maintenance of the molecular weight of the polymer in solution at certain values, identified in U.S. Pat. No. 4,806,382 as a critical condition of the method, is not actually a "condition" of the method, but rather, as stated in the specification, a result which is dependent on the reaction conditions employed in carrying out the graft polymerization process. It is, therefore, not appropriate to specify the molecular weight of the polymer in solution as a process "condition" since it is rather an outcome of the reaction conditions used in this invention and may be widely varied depending on specific gamma graft monomer-substrate-process conditions. If a certain set of fixed conditions are employed (namely, monomer, monomer concentration, total gamma dose, gamma dose rate and radical polymerization inhibitors), the molecular weight of the polymer formed in solution will be an output of the process which is dependent upon the values of the above-noted monomer, monomer concentration, total gamma dose, gamma dose rate and radical polymerization inhibitor conditions. For example, in the presence of certain ionic monomers, solvents or radical inhibitors, solution polymerization may be significantly inhibited without sacrificing efficient surface graft polymerization and the resulting solution polymer molecular weight may thereby be relatively low (i.e., as low as 5,000-10,000).
Since the application which matured into U.S. Pat. No. 4,806,382 was filed, the inventors of the subject matter defined therein conducted additional research and unexpectedly found that although relatively low doses of 0.01 to 0.20 Mrad are generally preferred for the compositions of this invention, the process could be conducted at a total gamma dose as low as 0.001 Mrad.
The state of the art prior to the application which matured into U.S. Pat. No. 4,806,382 taught the use of relatively high gamma doses, generally greater than 0.5 Mrad, for gamma polymerization grafting and it was, therefore, surprising to find that surface grafting could be achieved at doses as low as 0.01 Mrad. The achievement of effective grafting at doses as low as 0.001 Mrad is, consequently, an even more unexpected result of the process of this invention. Furthermore, although grafting with monomer concentrations as low as 0.5 wt. % was indicated in prior U.S. Pat. No. 4,806,382, further research has revealed that monomer concentrations as low as 0.1 wt. % may be utilized in some embodiments of the graft process of this invention.
Optimally, the method may also be carried out under one or more of the following conditions:
The improved gamma-irradiation induced graft polymerization of NVP, mixtures of NVP and HEMA or HEMA and other hydrophilic monomers or their copolymers on ocular implant surfaces comprising PP, PVDF, PC or PDMSO to form optimum PVP or P(NVP-HEMA) graft polymer surface grafts thereon may also be carried out under specific combinations of the process parameters as indicated above for PMMA, but also under conditions which involve excluding free oxygen from the polymerization solution for preferred surface modification of these ocular implant polymer substrates.
At the present time, surgical instruments, medical devices, prosthetic implants, contact lenses and the like which are intended for contact with blood or with sensitive tissue surfaces are constructed of materials having the necessary physical properties to enable their use for the intended application; however, they suffer from the disadvantage that due to the generally hydrophobic nature of the blood or tissue contacting surfaces thereof, they exhibit undesired thrombogenic properties and significant damage may occur to fragile or sensitive tissues by adhesion and manipulation or movement on contact with these instruments.
In U.S. Pat. No. 4,961,954, there are described improved methods for producing hydrophilic, gamma-irradiation induced polymerized and chemically grafted coatings on such instruments, devices and the like so constructed of a variety of polymeric materials.
The invention described in the above-noted patent is predicated on the discovery of certain process conditions and parameters that produce thin, hydrophilic, gamma-irradiation polymerized and chemically grafted coatings of N-vinylpyr-rolidone (NVP PVP!), copolymerized NVP and 2-hydroxyethyl-methacrylate (HEMA) P(NVP-HEMA)! or HEMA PHEMA! on the surfaces of articles adapted for contact with living tissue of a human or non-human animal, e.g., surgical instruments, medical devices, prosthetic implants, contact lenses and the like constructed of a wide variety of plastic materials. For purposes of the following description of the invention, the term "tissue" is intended to include blood as well as solid tissue surfaces.
The surface modifications or chemically grafted coatings of the invention increase the hydrophilicity of the article surfaces and minimize adhesion between the surface and sensitive tissues such as blood cells, vascular endothelium, peritoneum, pericardium and the like, thereby minimizing tissue damage and complications occasioned by contact between the article and such tissues. The coatings produced are thin and reproducibly uniform. Moreover, they are chemically bound to the surface of the article and, therefore, are far more durable and less subject to removal, degradation or deterioration during or following utilization of the articles than the coatings produced by prior art methods.
The improved gamma-irradiation induced graft polymerization of NVP, HEMA or mixtures of NVP and HEMA on plastic article surfaces to form optimum PVP, P(NVP-HEMA) or PHEMA graft polymer surface modifications thereon described in U.S. Pat. No. 4,961,954 comprises carrying out the graft polymerization in an aqueous solution under specific combinations of the following conditions:
Optimally, the method may also be carried out under one or more of the following conditions:
The invention described in U.S. Pat. No. 5,100,689 relates to plastic articles and methods for their manufacture wherein lower dosages are employed and the manufacture of molecular weight is not a "condition" of the process.
The invention described in U.S. Pat. No. 5,094,876 relates to plastic articles and methods for their manufacture wherein the article surface is first pre-soaked in a solution comprising the monomer prior to graft polymerizing the monomer onto the surface.
It is an object of the present invention to provide a still further improved method for producing hydrophilic coatings on the surfaces of such articles, as well as the articles produced by the improved method.

Surface modified surgical instruments, medical devices, implants, contact lenses and the like


An ignition device 11 for a multi-cylinder internal combustion engine is to be designed so that it operates reliably even under conditions of vibration acceleration of the internal combustion engine. Ignition device 11 has, depending on the number of cylinders of the internal combustion engine, rod-shaped ignition coils 12. An end section 22 of each ignition coil 12 is formed by a part of a core 23 of ignition coil 12 that protrudes from a housing 20 of ignition coil 12. A damper 29 is mounted on the part of core 23. The other end section 21 of ignition coil 12 is formed by a high-voltage dome 27, which is mounted in a socket 39 made of elastic material and placed in a spark plug pit 15 of a cylinder head 13 of the internal combustion engine. Ignition device 11 is elastically held by fastening element 33 and secured at both end sections 21, 22 on cylinder head 13 of the internal combustion engine. The high voltage is transferred in an elastic manner to a corresponding spark plug 16 via a high-voltage contact element 48, designed as a spring.

An ignition device, in which a plurality of individual ignition coils are individually mounted in a supporting unit and protrude from the supporting unit with their high-voltage domes, is described in European Patent No. 0 512 357.
A support unit assembled in this manner can be installed as a single piece on the cylinder head of an internal combustion engine, whereby all spark plugs become connected with the respective ignition coils.
However, the ignition coils are disadvantageously rigidly fastened in the supporting unit, so that they are exposed to strong vibration accelerations during operation of the internal combustion engine, which may impair the operating reliability of the ignition device.

Ignition device for a multi-cylinder internal combustion engine


A motion detecting system is attachable to an object for enabling and disabling an alarm flow of electrical current from a power source for actuating an alarm device. The system has a back plate with a substantially flat surface and a magnet freely pivotally mounted thereupon for generating a pivoting magnetic field that pivots with magnet in response to a motion of the object or of the system itself. System is set in an armed state by an electric pulse which causes at least one electrical contact is engaged by magnetic field in a first state to be set as an armed contact. When motion occurs, magnetic field pivots with magnet and armed contact in first state enters second state in which alarm flow is enabled for actuating alarm device. Contacts are spaced such that at least one contact is always engageable in first state.

It is well known in the art to use motion detecting systems for controlling actuation of other devices, such as an alarm device connected thereto, in response to a motion of an object to which the motion detecting system is attached or of the system itself. In this fashion, the owner of the object or system can be alerted by an alarm emitted by the alarm device when the object or system is moved, which may suggest an attempt at theft or tampering with the object or system.
In order to detect such motion, many such motion detecting systems use magnets or magnetic devices. Typically, such motion causes a corresponding motion of the magnet or magnetic device, whose magnetic field causes an electrical contact to open or close, which, in turn, causes a signal or electric current to be transmitted to the alarm device. The electric current or signal then causes the alarm device to actuate and emit an alarm.
An example of such a system is described in U.S. Pat. No. 4,275,291, issued to Okamura on Jun. 23, 1981, which discloses a portable alarm device having a motion detecting system that senses motion of the alarm device corresponding to a motion of the object to which the alarm device, including the motion detecting system, is attached. The motion detecting system includes a pendulum with attached magnet, set in motion by motion of the alarm device, which causes closing of alarm circuit reed switches to actuate a continuous alarm. However, disadvantageously, the alarm device requires use of a key to disable the alarm while placing the alarm device on the object to ensure that the alarm device is not actuated during placement and arming of the alarm device.
Obviously, should the key be lost or damaged, operation and utility of the alarm device will be compromised as authorized motion of the object and/or alarm device, i.e. motion caused by a legitimate user or owner, will cause the alarm device to emit an alarm.
U.S. Pat. No. 4,888,986, issued to Baer et al. on Dec. 26, 1989, discloses a rotational position indicator having nine position sensors substantially equally spaced around the circumference of a circle and. an armature mounted for rotation on an axis located at the center of the circle. The armature is formed with two position magnets for activating the sensors mounted on arms of the armature at approximately one hundred and forty degrees relative to each other. Each magnet is mounted at a radial position for selectively actuating the position sensors upon rotation of the armature. An electric circuit is coupled to each position sensor for indicating actuation or not of the respective position sensor. The output provides a unique position code for successive intervals of angular positioning of the armature. The actuators have an actuating effect over a selected angular interval sufficient to produce thirty-six unique position codes for identifying successive ten degree intervals of angular positioning of the armature relative to the stator. By detecting changes in position, the indicator may detect motion. This position indicator, however, is needlessly complex for purposes of motion detecting for an alarm device, as, for such purposes, exact position need not be known. Rather, only changes in position, i.e. motion, need be detected to actuate the alarm device. Also, disadvantageously, since the detector only recognizes thirty-six positions representing ten degree arcs, changes in position in between any two adjacent positions of the thirty-six positions may be undetected. In such circumstances, problems may also arise in determining which position will be considered for initializing, i.e. arming, the system.
U.S. Pat. No. 4,012,611, issued to Petersen on Mar. 15, 1977, teaches an intrusion alarm device in which the motion detecting system comprises a body of predetermined mass suspended in pendulum-like fashion upon a rod or the like from a fixed point within a housing. A switch arrangement including a magnetically actuatable switch, with overlapping contacts, and a magnet is mounted with respect to the end portion of the rod and a fixed, null location upon the housing. Any relative movement between these components will activate a digital circuit which will activate the alarm device and sound an alarm. While the overlapping of the contacts helps bias the rod towards the null location in which the system is in an armed state, and thus resolves some of the difficulties related to arming the motion detecting system, it also requires, disadvantageously, use of relatively complex logic and relatively complex logic circuits.
Accordingly, there is a need for a simple, portable, and self-contained motion detecting system which is capable of being easily and consistently set in an armed state for arming the system.

Motion detecting system for alarm device


The present invention relates to the treatment of nonalcoholic steatohepatitis (NASH), in particular to a compound that inhibits miR-21 expression for use in the treatment of nonalcoholic steatohepatitis.

Nonalcoholic fatty liver disease (NAFLD) and nonalcoholic steatohepatitis (NASH) are increasingly relevant public health issues owing to their close association with the worldwide epidemics of diabetes and obesity (Ratziu et al. (2010), J. Hepatol. 53(2):372-384). NAFLD and NASH are ones of the most common chronic liver diseases. Indeed, in a recent US survey, 39% of newly identified cases of chronic liver disease had NAFLD (Weston et al. (2005), Hepatology 41(2):372-379). Chronic inflammation and fibrosis are key features of NASH, distinguishing it from the relatively benign NAFLD. NASH has potential for fibrosis, cirrhosis decompensation, and hepatocellular carcinoma. Despite its severity and prevalence, there are no approved treatments for NASH. Therefore, there is a need to develop new drugs that will be suitable for treatment of NASH. In this way, characterisation of new therapeutic targets in NASH is highly desirable.
MicroRNAs (miRNAs) are a family of noncoding RNAs, 19-22 nucleotides in length that regulate gene expression at the posttranscriptional level via messenger RNA (mRNA) degradation or translational inhibition (Bartel (2009), Cell 136(2):215-233).
There is no disclosure in the art of a functional role of miR-21 in NASH, nor a cause-effect relationship of miR-21 with NASH, nor the provision of a beneficial effect of the use of compounds that inhibits miR-21 expression in the treatment of NASH.

Methods for the treatment of nonalcoholic steatohepatitis

Institut National de la Sante et de la Recherche Medicale (INSERM)


A method and apparatus are provided for assigning agents of an automatic call distributor to incoming calls of a plurality of call types handled by the automatic call distributor. The method includes the steps of determining a target occupancy matrix including a target occupancy for each agent of the agents of the automatic call distributor for each call type of the plurality of call types. The method further includes the steps of processing a call of a first type of the types determined in the target occupancy matrix and assigning the call to an agent of the agents of the automatic call distributor with a largest relative difference between an actual occupancy of calls of the first type handled by the agent and the target occupancy of calls of the first type determined for the agent in the target occupancy matrix.

Automatic call distribution systems are known. Such systems are typically used in an organizational context as a means of distributing telephone calls among a group of agents of the organization. Agents are typically segregated into groups to serve particular call targets within an organization.
Often the organization disseminates a single telephone number to its customers and to the public in general as a means of contacting the organization. As calls are directed to the organization from the public switch telephone network (PSTN), the automatic call distribution system directs the calls to its agents based upon some algorithm, typically based upon availability. For example, where all agents are considered equal, the automatic call distributor (ACD) may distribute the calls based upon which agent position (telephone) has been idle the longest.
In other systems, where skill is considered essential for call handling, a call may be directed to an agent (or agent group) considered the most skilled for the call considered. In these systems, a database of customer records is maintained. Customers are identified to the ACD and database by features such as automatic number identifier (ANI).
In order to staff an ACD, an organization often relies on historical levels (in Erlangs) of incoming calls to the individual call targets. A manager of the ACD may examine the historical call loading records, add or subtract a percentage of the historical loading based upon a most recent call history (e.g., the most recent week or month), and estimate a staffing level based upon those calculations. Alternatively, some organizations have relied upon commercially available predictive software (i.e., force management packages) which calculates daily staffing levels based upon historic information.
Once daily staffing levels have been estimated, agents are scheduled based upon those estimates. Where more than one organizational call target is involved (e.g., sales agents, service agents, outgoing call campaign agents, etc.), requiring different agent skills, each group is separately staffed based upon an Erlang estimate for that group.
As an alternative to staffing individual groups, some systems group all agents together and assign a skill rating to each agent. Calls are then assigned based upon the skill rating of the agent for handling that type of call.
For example, where a single group is used, an ACD will always look for and assign the call to the most qualified agent. However, some agents are more qualified than others. Because of the differences in qualifications, some agents receive more calls than others, resulting in an inequitable work load.
Further, where all agents are grouped together, an Erlang rate for any one group becomes irrelevant. For example, one benefit of using a common group relates to economies of scale. Two separate groups that separately require 10 agents each would typically only require 18 agents from a common pool of agents.
Further, it is difficult, if not impossible for call center management to known how many agents are serving a particular call target. Because of the difficulty of determining agent loading, it is also difficult to project staffing requirements in a shared agent environment.
Where all agents are grouped together, staffing estimates must be based upon an Erlang rate of the organization as a whole. Basing a staffing estimate upon an organization as a whole is subject to large errors. Because of the importance of call handling through ACDs, a need exists for a method of assigning agents which is more flexible than the individual group method, but which may still be staffed based upon Erlang estimates of the individual call groups.

Rockwell Electronic Commerce Technologies, LLC


A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure.. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.

Thin film field effect transistors (TFT) used in liquid crystal display (LCD) applications typically use amorphous silicon (a-Si:H) as the semiconductor and silicon oxide and/or silicon nitride as the gate insulator. Recent developments in materials have led to the exploration of organic oligomers such as hexathiophene and derivatives, and organic molecules such as pentacene (G. Horowitz, D. Fichou, X. Peng, Z. Xu, F. Garnier, Solid State Commun. Volume 72, pg. 381, 1989; F. Garnier, G. Horowitz, D. Fichou, U.S. Pat. No. 5,347,144) as potential replacements for amorphous silicon as the semiconductor in thin-film field-effect transistors.
The highest field effect mobility in thiophene-oligomer-based TFT's is usually about 0.06 cm.sup.2 V.sup.-1 sec.sup.-1 (F. Garnier, R. Hajlaoui, A. Yassar, P. Srivastava, Science, Volume 265, pg. 1684, 1994), which is substantially lower than the mobility of standard a-Si:H TFT's. Only in the case that the organic insulator cyanoethylpullulane was used, was a higher field effect mobility measured (0.4 cm.sup.2 V.sup.-1 sec.sup.-1, F. Garnier, G. Horowitz, D. Fichou, U.S. Pat. No. 5,347,144). However, that insulator exhibits some undesirable characteristics such as inferior dielectric strength, mobile charges, (G. Horowitz, F. Deloffre, F. Gamier, R. Hajlaoui, M. Hmyene, A. Yassar, Synthetic Metals, Volume 54, pg 435, 1993) and sensitivity to humidity. Hence it is not suitable for use as a gate insulator in the fabrication of practical TFT devices.
Field effect mobility up to 0.6 cm.sup.2 V.sup.-1 sec.sup.-1 has recently been achieved in pentacene based TFT's with SiO.sub.2 as the gate insulator (Y. Y. Lin, D. J. Gundlach, T. N. Jackson, 54.sup.th Annual Device Research Conference Digest, 1996 pg. 80), making them potential candidates for such applications. Major drawbacks of these pentacene-based organic TFT's are high threshold voltage, high operating voltages required to achieve high mobility and simultaneously produce high current modulation (typically about 100 V when 0.4 .mu.m thick SiO.sub.2 insulator is used), and high sub-threshold slope, S, which is approximately 14 V per decade of current modulation (Y. Y. Lin, D. J. Gundlach, T. N. Jackson, 54.sup.th Annual Device Research Conference Digest, 1996, pg. 80) as compared to about 0.3 V per decade of current modulation achieved in a-Si:H based TFT's (C.-Y. Chen, J. Kanicki, 54.sup.th Annual Device Research Conference Digest, 1996, pg. 68). Reducing the thickness of the gate insulator would improve the above mentioned characteristics but there is a limit to the decrease of the insulator thickness, which is imposed by ease of manufacturing and reliability issues. For example in the current generation of TFT LCD devices the thickness of the TFT gate insulator is typically 0.4 .mu.m.
The electrical characteristics of TFT's having pentacene as the semiconductor, a heavily doped Si-wafer as the gate electrode, thermally grown SiO.sub.2 on the surface of the Si-wafer as the gate insulator, and Au source and drain electrodes, are adequately modeled by standard field effect transistor equations (S. M. Sze "Physics of Semiconductor Devices", Wiley, New York, 1981, pg. 442), as shown previously (G. Horowitz, D. Fichou, X. Peng, Z. Xu, F. Garnier, Solid State Commun. Volume 72, pg. 381, 1989; C. D. Dimitrakopoulos, A. R. Brown, A. Pomp, J Appl. Phys. Volume 80, pg. 2501, 1996). The pentacene used in these devices behaves as a p-type semiconductor. FIG. 1, cited from Y. Y. Lin, D. J. Gundlach, T. N. Jackson, 54.sup.th Annual Device Research Conference Digest, 1996pg. 80, shows the dependence of the current flowing between the source and drain electrodes (I.sub.D) on the voltage applied to the drain electrode (V.sub.D), at discrete voltages applied to the gate electrode (V.sub.G). When the gate electrode is biased negatively with respect to the grounded source electrode, pentacene-based TFT's operate in the accumulation mode and the accumulated carriers are holes. At low V.sub.D, I.sub.D increases linearly with V.sub.D (linear region) and is approximately given by the equation: ##EQU1## where L is the channel length, W is the channel width, C.sub.i is the capacitance per unit area of the insulating layer, V.sub.T is a threshold voltage, and .mu. is the field effect mobility. .mu. can be calculated in the linear region from the transconductance: ##EQU2## by plotting I.sub.D vs. V.sub.G at a constant low V.sub.D and equating the value of the slope of this plot to g.sub.m.
When the drain electrode is more negatively biased than the gate electrode (i.e. -V.sub.D .gtoreq.-V.sub.G), with the source electrode being grounded (i.e. V.sub.s =0), the current flowing between source and drain electrodes (I.sub.D) tends to saturate (does not increase any further) due to the pinch-off in the accumulation layer (saturation region), and is modeled by the equation: ##EQU3##
FIG. 2a shows the dependence of I.sub.D on V.sub.G in saturation (Y. Y. Lin, D. J. Gundlach, T. N. Jackson, 54.sup.th Annual Device Research Conference Digest, 1996, pg. 80). The field effect mobility can be calculated from the slope of the .sqroot..vertline.I.sub.D .vertline. vs. V.sub.G plot. FIG. 2b shows a plot of the square root of I.sub.D vs V.sub.G. A mobility of 0.62 cm.sup.2 V.sup.-1 sec.sup.-1 can be calculated from this plot. The sub-threshold slope, S, is approximately 14 volts per decade of current modulation (Y. Y. Lin, D. J. Gundlach, T. N. Jackson, 54.sup.th Annual Device Research Conference Digest, 1996, pg. 80).

Thin-film field-effect transistor with organic semiconductor requiring low operating voltages

International Business Machines Corporation


A developing device for developing a latent image electrostatically formed on an image carrier includes an endless developing belt, and an applicator roller for applying a viscous developing liquid consisting of a dielectric carrier liquid and toner dispersed in the carrier liquid to the developing belt in the form of a thin layer. The developing liquid is transferred from the developing belt to the image carrier for developing the latent image. The applicator roller holds a preselected amount of the developing liquid thereon, contacts a portion of the developing belt not pressed from the rear side, and rotates in a direction opposite to a direction in which the developing belt moves. The device is therefore capable of uniformly applying the developing liquid to the developing belt and thereby improving image quality.

The present invention relates to an image forming apparatus including a photoconductive drum or belt or similar image carrier and more particularly to a developing device included in an image forming apparatus for causing a developing liquid in the form of a thin layer to contact and develop a latent image electrostatically formed on an image carrier.
It is a common practice with a developing device of the type described to use an applicator roller for applying a developing liquid to an image carrier in the form of a thin uniform layer. However, the conventional liquid application using an applicator roller has the following problems left unsolved. At the outlet of a nip where the applicator roller and a developer carrier contact each other, the developing liquid between the roller and the carrier is separated into a layer left on the roller and a layer transferred to the carrier. At this instant, cavitation occurs on the surfaces of such layers and brings about fine irregularities including spot-like voids and stripe-like ribs extending in the direction of movement of the developer carrier. The fine irregularities lower image quality. Further, if the developing liquid is not applied to the developer carrier in a constant amount, then the resulting image density is irregular.

Developing device for an image forming apparatus


A method of etching metals and/or metal-containing compounds using a plasma comprising a bromine-containing gas. In one embodiment, the method is used during fabrication of a gate structure of a field effect transistor having a titanium nitride gate electrode, an ultra-thin (about 10 to 20 Angstroms) silicon dioxide gate dielectric, and a polysilicon upper contact. In a further embodiment, the gate electrode is selectively notched to a pre-determined width.

1. Field of the Invention
The present invention generally relates to a method of fabricating devices on semiconductor substrates. More specifically, the present invention relates to a method of fabricating a field effect transistor having a metal-containing gate electrode.
2. Description of the Related Art
Microelectronic devices are generally fabricated on a semiconductor substrate as integrated circuits wherein various conductive layers are interconnected with one another to facilitate propagation of electronic signals within the device. An example of such a device is a complementary metal-oxide-semiconductor (CMOS) field effect transistor.
A CMOS transistor comprises a gate structure disposed between source and drain regions that are formed in the semiconductor substrate. The gate structure generally comprises a gate electrode and a gate dielectric. The gate electrode is disposed over the gate dielectric to control a flow of charge carriers in a channel region that is formed between drain and source regions beneath the gate dielectric. The gate dielectric comprises a thin (e.g., 10 to 50 Angstroms) material layer having a dielectric constant of about 4.0 or greater (e.g., silicon dioxide (SiO2), silicon oxynitride (SiON), hafnium dioxide (HfO2), and the like).
In advanced CMOS transistors, the gate electrode may be formed from at least one of a metal (e.g., titanium (Ti), tantalum (Ta), tungsten (W), and the like) and metal-containing conductive compound (e.g., titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), and the like). Herein such a gate electrode is referred to as a metal-containing gate electrode. Generally, the metal-containing gate electrode comprises a top contact (e.g., doped polysilicon) to facilitate a low-resistance interface between the gate structure of the CMOS transistor and conductive lines of the integrated circuit. Replacement of polysilicon as a traditional material of the gate electrode with metals and metal-containing compounds reduces undesired voltage drop associated with the polysilicon depletion effect, as well as increases drive current performance and operational speed of the CMOS transistor.
Etch processes used during fabrication of the gate structures having metal-containing gate electrodes may have low etch selectivity to the underlying dielectric layers and, as such, damage the gate dielectric layer of the transistor. Additionally, the chemistries used to etch the polysilicon contact layer of the gate structure produce polymeric post-etch residue. Removal of the residue using conventional etchants (e.g., chlorine (Cl2), hydrogen bromide (HBr), and the like) is a difficult to control process that may also damage the thin gate dielectric layer, as well as contaminate a processing chamber of the etch reactor. Fabrication of the gate structures having metal-containing gate electrodes using such etch and residue removing processes generally has a low yield, as well as requires integration of additional processing equipment in the process flow that is conventionally used in the semiconductor fabs to fabricate field effect transistors, thus increasing the costs of manufacturing the microelectronic devices and integrated circuits.
Therefore, there is a need in the art for an improved method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode.

Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode


An electronic messaging system is provided to generate and send electronic messages that contain adaptive content to customize the electronic messages for each recipient. The system operates to receive an adaptive content asset and a content rule, select a set of adaptive content elements from the adaptive content asset based upon the content rule, and send a content locator to an author computing device to permit the author computing device to include the content locator in the electronic message and send the electronic message to a recipient computing device.

Electronic marketing is performed by sending commercial electronic messages, such as email messages, to a group of current or potential customers. The electronic messages typically include advertisements, business requests, and/or loyalty enhancement materials. To maximize the impact of an electronic marketing campaign, significant time and effort is often put into planning and designing the look and content of email messages based on known or assumed needs or interests of the targeted message recipients. However, it can be difficult to execute a successful electronic marketing strategy using static content that is sufficiently tailored to all of the variety of different characteristics of the targeted message recipients.

Electronic messaging system involving adaptive content


Provided is an image forming apparatus that performs appropriately changing to the power-saving mode according to environment (luminosity) of a place that user exists, without increasing in a cost. When there is access from a portable terminal, communication circuit requests to the portable terminal for transmission of illuminance information detected by an illuminance sensor in a side of the portable terminal. Then, based on the illuminance information, mode switching circuit changes to the power-saving mode.

The present disclosure is related with has an energy saving function that performs changing from a normal operation mode to a power-saving mode, automatically, the image forming apparatus, and recording medium.
In an image forming apparatuses, such as a typical MFP (Multifunction Peripherals) or a printer, has an energy saving function. An energy saving function is a function to perform changing from normal operation mode to the power-saving mode, automatically, in cases of having no operation for a definite period of time. By the energy saving function, power consumption can be reduced in a standby state. Here, a low power mode and a sleep mode are examples of the power-saving mode.
The low power mode is an operational mode that makes a touch panel and a light turn off, for example. In the low power mode, when printing data or a FAX message is received, it restores to normal operation mode, automatically. Then, printing is performed. Also, a sleep mode is an operational mode that makes the touch panel and the light turn off and stops the electric power supply to a fixing part. In the sleep mode, as compared with the low power mode, it may need time to start printing. However, the sleep mode has a higher power saving effect.
In addition, time to proceed from the normal operation mode to the low power mode can be set up, arbitrarily. Also, time to proceeds from the low power mode to the sleep mode can be set up, arbitrarily. In addition, the low power mode may not be equipped depending on a model. In this case, time to proceeds from the normal operation mode to the sleep mode can set up, arbitrarily. Also, for example, in cases of having operated touch panel or having an access from a portable terminal, it proceeds from the low power mode or the sleep mode to normal operation mode.
In a typical image forming apparatus that has such the energy saving function, the illuminance sensor is equipped in the apparatus and detects a luminosity outside of the apparatus, and it performs power saving control. In the apparatus, when the luminosity outside of the apparatus is detected with the illuminance sensor, for example, in case of being dark, it changes to the power-saving mode, automatically.

Image forming apparatus having energy saving function to change from normal operation mode to power-saving mode, and recording medium thereof


An electrical connector (100) comprises an insulating housing (1) with a plurality of signal contacts (31) and a plurality of grounding contacts (30) received therein, a shielding member (2) and a connecting member (4) set in the insulating housing (1), the shielding member (2) locates around the signal contacts (31), each of the grounding contacts (30) includes a body portion (300), a spring arm (301) extending upwardly from the body portion (300) and a tail portion (302) extending downwardly from the body portion (300), the spring arm (301) includes a contact portion (3010) at the end thereof, the connecting member (4) connects the contact portion (3010) and the tail portion (302) with the shielding member (2).

1. Field of the Invention
The present invention relates to an electrical connector, and more particularly to an electrical connector having improved shielding members.
2. Description of Related Art
LGA (Land Grid Array) connectors are widely used in electrical field for electrically connecting an IC package with a substrate. Along with the development of the electrical technology, the pads of the IC package and the substrate are set more density. According, the contacts of the LGA connector become more density. In this situation, electromagnetic interference becomes more and more serious which will effect the signal transmission between the IC package and the substrate. Thus, a shielding member is set in the LGA connectors to solve electromagnetic interference problem.
TW patent No. M419248 issued to CHANG on Dec. 21, 2011 discloses a conventional electrical connector. The electrical connector includes an insulating housing with a plurality of contacts received therein and a plurality of shielding members assembled in the insulating housing. The insulating housing includes a top end, a bottom end and a plurality of passageways penetrating the top end and the bottom end. Each of the passageways includes a first passageway and a second passageway. The contacts receive in the first passageways and the shielding members receive in the second passageways. Each of the contacts includes a body portion, an upper spring arm extending upwardly from the body portion, a lower spring arm extending downwardly from the body portion and a retention portion extending from one side of the body portion. The upper spring arm includes a contact portion. The lower spring arm includes a soldering portion. The body portion, the retention portion, the upper spring portion and the lower spring portion locate in the first passageway. Due to the upper spring arm the lower spring arm extending beyond the upper end and the bottom end, but the shielding members locating between the upper end and the lower end, thus, the shielding member can not shielding the whole contact. At the same time, the shielding member disconnects with the IC package and the substrate which will affect the shielding effect.
Hence, it is desirable to provide an improved electrical connector to overcome the aforementioned disadvantages.

Electrical connector having improved shielding members


An apparatus for shaping, and/or directing the flow of deformable materials, wherein the apparatus includes a novel vibrating wall assembly having at least one surface which defines a specific geometric shape over which the deformable material will pass. The novel vibrating wall assembly of this present invention includes the following components: (a) a plurality of pulsating, polygonally-shaped surface elements which are movable between a resting position and an energized position; (b) an energizing device for moving at least one of the plurality of pulsating surface elements from its resting position to its energized position, to form an energized surface element; (c) a biasing device for moving the energized surface element from its energized position back to its resting position; and (d) a linking device for interconnecting the plurality of pulsating surface elements, wherein the linking device allows for the limited pulsating movement of the plurality of pulsating surface elements.

The processing of deformable materials generally involves the transformation of a starting material (i.e., in a solid state or a liquid state), which is in a random form (e.g., powder, beads, granules, pellets, etc.), into a final or intermediate product having a specific shape, dimensions and properties. Processes useful in the transformation of deformable materials from their initial random form to the form of the final or intermediate product are well known to those skilled in the materials processing industry. For instance, if the deformable material is a plastic, examples of such plastic transformation processes include, but are not limited to: extrusion, transfer molding, calendaring, laminating, thermoforming, injection molding, compression molding, blow molding and the like. As used herein, such transformation processes and/or operations are collectively referred to as "molding" processes. Similarly, the resulting final or intermediate product is referred to as "molded", regardless of the specific transformation process employed in its manufacture. The materials processing industry is abundant with teachings in this field of technology.
Most of the conventional molding processes include at least the following steps: (a) transporting an unmolded, deformable material to a molding device, (b) heating the unmolded, deformable material until it can be deformed to take the geometric configuration of the mold or die, (e) shaping the heated material to the geometric configuration of the mold or die to form a molded product, and (d) cooling the molded product. These steps can be done either in sequence or simultaneously or a combination of both.
In order to produce molded products having a specific geometric configuration, it is generally necessary to employ a mold or die. The primary objective of a mold or die is to shape the deformable material introduced therein. Sometimes, molds and dies have a secondary objective, this being to cool the deformed material therein until it is able to maintain its shape when the molded product is withdrawn therefrom.
The physical properties of a molded product depend, in part, upon the specific molding process conditions and steps employed. It has been observed that different molding processes will often result with the final or intermediate products having different physical properties. For example, the amount of shear stress in a molded product determines, in part, the degree of molecular orientation and crystallization within the molded product. This, in turn, has an affect on the molded product's physical properties.
Since there is a need to be able to produce molded products which have physical properties within particular ranges, if a means can be devised for controlling at least some of these physical properties (e.g., by controlling the degree of shear stress) both the process and the product resulting therefrom will be greatly welcomed in the molding industry.
One method of controlling the amount of shear stress in a molded product (and thereby controlling some of the product's physical properties), is commonly referred to as "flow technology". The concept of "flow technology", as it relates to plastic molding processes, is concerned with the behavior of a deformable plastic material before, or while, it is being introduced into a mold and/or being passed through a die.
It has been discovered that the properties of a final or intermediate molded product depend largely upon how the deformable material flows prior to, and/or while, being subjected to a molding process. For example, two products, having identical dimensions and made from the same basic starting material, but which are molded under different conditions (e.g., different hydrostatic pressures and/or shear stresses) and subjected to different flow patterns, will probably have different physical properties.
This phenomena is due, in part, to the fact that, as a deformable material flows prior to, or while, entering a mold or passing through a die, it is subjected to a shear stress which is commonly referred to herein as "flow shear stress".
Flow shear stress induces molecular orientation in the plastic material (i.e., it results in the macromolecules aligning themselves in the direction of flow). The flow shear stress varies from a maximum level at the outside surface of the flowing deformable material to a minimum level at the center where the material is last to cool.
From the above it can be seen that the manner in which the deformable material flows into a mold or through a die, or prior to being subjected to a specific molding process, is of extreme importance in determining the physical properties of the final molded product due, in part, to the degree of flow shear stress which will be imparted thereto.
If a means can be devised for controlling the degree of molecular orientation resulting from flow shear stress, it would be greatly welcomed in the molding industry since it will enable the manufacturer to have a greater degree of control over the product's final properties.
As is well known in the molding industry, during the compensating phase of a typical injection-molding process, the flow of a deformable material into the mold is generally unstable due to the flow occurring in "rivers" which spread out in a delta-like manner. The first material to freeze off shrinks early in the cycle. By the time the material freezes in these "rivers", the bulk of the material is frozen up and the shrinkage has already occurred. Therefore, the rivers shrink relative to the bulk of the molded article.
Since the rivers are highly oriented, shrinkage can be very high. This, in turn, can result in high degrees of stress inside the molded part which can, for example, be a source of warpage. Accordingly, if a means can be devised which reduces the degree of shrinkage from the "rivers" and, thus, reduces the degree of warpage in the final product, it would also be greatly welcomed in the molding industry.
It has also been discovered that the micro structures and the morphology of a molded product (e.g., molecular orientation, degree of crystallinity, etc.) are greatly influenced by the thermo-mechanical history experienced by a deformable material during its molding process steps. And, as can be expected, the ultimate properties of the molded product are closely related to the deformable material's morphology and micro structure.
Specifically, according to U.S. Pat. No. 4,469,649, which is incorporated herein by reference, the control of a material's transformation process, from its random form to its final molded form, can be made at least partially dependent upon the rheological properties of the plastic material as it is subjected to specific molding techniques.
If a means can be devised to control the micro structures and the morphology of a molded deformable product, it would be greatly welcomed in molding industry.
As can be seen from the above, while molded products (e.g., plastics) play a significant role in our daily lives, and are expected to play an even more important role in our future, there are many problems in the manufacturing of such products which still remain unsolved.

Molding deformable materials with use of vibrating wall surfaces


The inventive subject matter relates to a pharmaceutical aerosol product suitable for administration by oral or nasal inhalation and its use in the treatment of respiratory diseases, in particular in the treatment of children.

Corticosteroids are commonly used in the treatment of a variety of respiratory diseases, such as for example asthma and allergic rhinitis. For oral inhalation, corticosteroids are generally delivered either by using a nebulizer, a metered dose inhaler, or alternatively a dry powder inhaler. For nasal administration, corticosteroids are generally delivered as intranasal sprays or nasal drops, which may be formulated with aqueous or non-aqueous vehicles.
For administration to the respiratory system of a human, it is an object to provide a pharmaceutical composition, which is both physically and chemically stable and to make available to the patient in need thereof a pharmaceutical product, which delivers with each application an accurate dose of the drug and, if applicable, displaying the targeted particle size distribution.
A pharmaceutical product for use in a specific target population might require modifications and reformulations in order to be more suitable in another target population. As an example, a dose of a drug, which is considered as a safe and effective treatment of a specific disease in adults, might not be regarded as an optimal dose with respect to safety and efficacy when applied to children, in particular younger children. For administration of a drug specifically to the paediatric population, it is an object to provide pharmaceutical compositions with low concentration of the drug and/or pharmaceutical products delivering a low dose of the drug, which low dose represents a safe and effective treatment of the targeted disease in such patient population.
The objects as outlined above are addressed and solved by the present invention.

Pharmaceutical aerosol product for administration by oral or nasal inhalation


A local oscillator includes a phase-locked loop. The phase-locked loop includes voltage controlled oscillator (VCO) and a novel VCO control circuit. The VCO control circuit may be programmable and configurable. In one example, an instruction is received onto the VCO control circuit to change the power state of the VCO. The instruction is issued by other circuitry in response to a detected change in RF channel conditions (for example, a change in a signal-to-noise determination) in a cellular telephone. In response, the VCO control circuit outputs control signals that gradually widen the loop bandwidth of the PLL, then gradually change the VCO bias current to change the VCO power state, and then narrow the loop bandwidth of the PLL back to its original bandwidth. The entire process of widening the PLL bandwidth, changing the VCO power state, and narrowing the PLL bandwidth occurs while the PLL remains locked.

1. Technical Field
The disclosed embodiments relate to local oscillators, and more particularly to local oscillators in RF communication devices.
2. Background Information
RF communication devices such as cellular telephones generally employ local oscillators. The receiver circuitry of a cellular telephone may, for example, employ a first local oscillator to generate a first reference signal of a specific frequency. The frequency of the first reference signal is changed in order to tune the receiver of the cellular telephone to a desired operating frequency or to change operating frequency bands. Similarly, the transmitter circuitry of the cellular telephone may employ a second local oscillator to generate a second reference signal of a specific frequency. The frequency of the second reference signal is changed in order to set the transmitting frequency with which the cellular telephone transmits.
A circuit called a phase-locked loop (PLL) is often used realize such local oscillators within cellular telephones. Within the control loop of the PLL, a voltage controlled oscillator (VCO) generates a signal whose frequency is determined by a voltage signal supplied to the VCO. The quality of the signal output by the VCO generally varies depending on certain factors including the size of the components that make up the VCO and the power consumption of the VCO. For example, if the VCO is operated at a higher power then the VCO may introduce less phase noise into the VCO output signal. If, on the other hand, the VCO is operated at a lower power then VCO may introduce more phase noise into the VCO output signal.
The amount of phase noise that is tolerable is not constant but rather varies depending on a number of factors. If the cellular telephone receiver is operating in an environment that has a source of interference that is close in frequency to a signal to be received, then the receiver requires that the VCO output signal have less phase noise. If there is no interference source, then the requirements on VCO output signal quality are relaxed. In a Wideband Code Division Multiple Access (WCDMA) communication system, for example, the cellular telephone may be receiving at the same time that it is transmitting. To prevent the signal being transmitted from interfering with the signal being received, a receiver VCO output signal having low phase noise is required. In other operating modes of the WCDMA system in which the transmitter is not on, it is acceptable for the receiver VCO output signal to have more phase noise. When no strong interference sources are present, a lower quality VCO output signal may be adequate.
The VCO circuits within a cellular telephone may consume a considerable amount of power. In a mobile communication device such as a cellular telephone, extending the amount of time that the cellular telephone can operate on a single battery charge is desirable. U.S. Pat. No. 7,151,915 discloses determining a signal-to-noise ratio (SNR) of a signal being received onto an RF communication device. If the SNR is found to exceed a threshold, then the bias voltage supplied to the receiver's VCO is reduced such that the VCO is set into in a lower power consumption mode. If, however, the SNR is found to be degrading over time, then the bias voltage supplied to the receiver's VCO is increased and the VCO is operated in a higher power consumption mode. Accordingly, VCO power consumption is set at or near its lowest acceptable level for detected RF channel conditions.

Method and apparatus for controlling a bias current of a VCO in a phase-locked loop


The present invention is a self-developing compact camera having a housing that encloses, in a common cavity thereof, an arrangement comprising a taking lens, shutter, a light-reflector, viewfinder, power source, actuator, a self-developing film compartment, and a spring biased exit flap. The present invention also includes a method of manufacturing said camera.

The present invention relates generally to photographic apparatus and, more specifically, to improvements regarding photographic apparatus for handling and processing film units of the self-developing type.
One commercially successful instant film system includes a camera wherein a self-developing film unit is removed manually from the camera following exposure, thereby effecting processing of the exposed unit, indexing of a subsequent film unit, and singulation of the pulled unit.
Examples of such cameras and film are described generally in commonly-assigned U.S. Pat. Nos. 5,870,633; 6,055,380; and, 6,099,172. Film assemblages that are particularly adapted for use in these cameras include an elongated strip containing in an alternating arrangement a plurality of successively aligned and identical film frames. Each of the film frames comprises generally coextensive positive and negative sheets that are generally rectangular in configuration and are in superimposed relationship to one another. In addition, a pair of elongated rails is provided that are sandwiched between the positive and negative sheets. Further included is a rupturable reservoir containing processing fluid at a leading end of the film unit and a trap at the trailing end of the unit. The reservoir includes a weakened portion that ruptures upon the application thereto of predetermined compressive forces that are applied by a pressure applying assembly during film assemblage removal. It is extremely important for the successful development of latent images that the fluid be spread in a relatively uniform layer. It is equally as important that ambient light not interfere or strike the unprocessed latent image before processing is complete as might occur by such light being lightpiped. Light-piping tends to occurs when ambient light travels along a portion of the film extending from the camera and strikes the still unprocessed exposed film in the interior of the camera. In addition, it is highly desirable to prevent against undesired light striking the film if components, such as the film loading door do not properly close.
It has been known to address the problem of non-uniform spreading of processing fluid between superposed sheets of photosensitive material, such as described in, for example, commonly assigned U.S. Pat. No. 2,845,850; and the above-noted crossreferenced patent application. It is also known to address the issues of light-piping. Many known approaches exist, such as is accomplished by a relatively large flap extending over an exterior portion of the camera""s film exit slot; as is described in the last-noted patent application. In addition, there have been numerous efforts to insure that the camera is otherwise light tight particularly in those camera areas that are repeatedly opened and closed by the user, such as the film-loading door. Furthermore, despite the satisfactory results obtained using such past approaches there is, nevertheless, a desire to improve upon heretofore known approaches.
It is an object of the present invention to provide for an improved photographic apparatus and method of processing self-developing film that minimizes image artifacts caused by withdrawing the film from the exit slot at undesired pitch angles, and those caused by light-piping occurring during emergence of the film from the camera as the film is being pulled.
It is a further object of the present invention to provide for an improved photographic apparatus and method of the foregoing type wherein the film assemblage may be manually withdrawn from the slot without diminishing the uniform thickness of the processing fluid layer despite angular pitch changes of the film during withdrawal.
It is another object of the present invention to inhibit lightpiping with structure that covers the emerging film and at the same time includes film engagement members that selectively engage the film and limit the latter""s degree of angular deviancy with respect to a desired horizontal film pulling plane so as not to alter uniform processing fluid thickness.
It is still a further object of the present invention to provide for an improved apparatus and method of foregoing type, which insures lighttight conditions of the camera including about the loading door.
It is still a further object of the present invention to provide for an improved apparatus and method of foregoing type, which is achieved in a simplified construction.
The above and other objects and scope of the present invention will become apparent following reading a detailed description thereof and taken in conjunction with the accompanying drawings in which like reference numerals designate like structure throughout the several views.


Laminated articles that include a first textile and a functional film layer bonded together by an adhesive layer having a distinctive, discontinuous adhesive pattern is provided. The discontinuous adhesive pattern creates regions free or substantially free of adhesive that permits the laminate to preferentially bend in those regions. The adhesive regions, together with the non-adhesive regions, create a visible pattern on the surface of the laminate. A second textile may be bonded to the functional film layer opposing the first textile. The first textile or the film layer may be elastic, shrinkable, or expandable. In such embodiments, raised portions of the laminate corresponding to the non-adhesive regions and curled portions corresponding to the adhesive regions are visible. The laminated article is waterproof, liquid-proof, breathable, and aesthetically pleasing and demonstrates a reduction in stiffness, improved insulation properties, improved stretch properties and a reduction of noise associated with bending the article.

Waterproof, breathable garments are well-known in the art. These garments are often constructed from multiple layers in which each layer adds a certain functionality. For example, a garment could be constructed using an outer textile layer, a waterproof, breathable film layer, and an inner textile layer. It is often desirable to have the multiple layers bonded together with an adhesive layer to create a laminate and prevent the layers from sliding past each other to give the look and feel of a single-layered garment. The process of bonding the layers together, however, has the detrimental effects of making the garment stiffer and noisier when worn. This not only reduces the enjoyment of wearing these garments, but can also affect performance in applications where noise control is critical, such as in hunting or military applications.
In addition to the stiffness and noise concerns, there are other reasons that a uniformly bonded laminate may be undesirable. For instance, if tensions are not well-controlled during the lamination process, the resulting laminate can curl due to the residual stresses created during lamination. Such curling of the laminate makes garment construction problematic as it is difficult to lay the pieces flat while sewing. Conversely, if the layers are not bonded together at all, the complexity of garment construction may increase due to each material having to be cut and laid out separately.
Further concerns with uniformly bonded laminates arise when stretch properties are desirable within waterproof, breathable garments and articles. Issues ranging from fit to donning and doffing ease to comfort during movement, to name but a few, can be significant challenges when working with uniformly bonded laminates. Conventional stretchable waterproof breathable garments have been described in, for example, U.S. Pat. No. 4,443,511, and U.S. Pat. No. 4,935,287. Limitations still exist with respect to the high stretch forces required to stretch these uniformly bonded laminate materials.
Therefore, a need in the art exists for a laminate article that can maintain the positive attributes of a bonded, multi-layer article while reducing noise, stiffness, stretch force and residual lamination stresses.

Laminated articles having discontinuous adhesive regions


In a self-pulsation type semiconductor laser, a first clad layer of a first conductivity type, an active layer, and a second clad layer of a second conductivity type having a striped ridge portion are successively stacked on a semiconductor substrate of the first conductivity type. In an embedding layer formed on either side surface of the ridge portion and on either flat portion other than the ridge portion of the second clad layer, a saturable absorption layer is provided on a material layer having a refractive index equal to or greater than that of the second clad layer and not absorbing laser light.

1. Field of the Invention
The present invention relates to semiconductor lasers, and more particularly to a low-noise, self-pulsation type semiconductor laser suitable as a light source for recording and reproducing information on an optical disk or the like.
2. Description of the Background Art
In the case that a semiconductor laser for lasing in a uniaxial mode receives laser light feedback reflected from an optical disk surface, the lasing state of the semiconductor laser changes unstably due to the interference with the optical feedback, thereby causing noise. Such noise is called optical feedback noise, which becomes a major obstacle to using the semiconductor laser as a light source of an optical pick-up for reproducing information on an optical disk or the like.
Conventionally, in order to reduce the optical feedback noise, a high frequency voltage has been superposed on a driving voltage of the semiconductor laser to lower the coherence of the laser light. However, this method requires an external circuit for the superposition of e high frequency voltage, so that costs and sizes of optical pick-up parts are increased and further the circuit is liable to emit undesirable electromagnetic waves.
In a self-pulsation type semiconductor laser provided with a saturable absorption region in an optical waveguide, on the other hand, the saturable absorption region functions to cause self-pulsation of the lasing intensity within a frequency range from some hundred megahertz to some gigahertz, so that the coherence of the laser light can be lowered. Further, the superposition of high frequency voltage is unnecessary in the self-pulsation type semiconductor laser and thus an external circuit therefor can be eliminated. As such, it becomes possible to produce compact pick-up parts not emitting electromagnetic waves.
FIG. 11 shows a self-pulsation type semiconductor laser of a first conventional example in a schematic cross section. Here, an AlGaInP-based semiconductor laser is shown as an example of the self-pulsation type semiconductor laser for emitting light of red color.
The semiconductor laser of FIG. 11 is provided with an n type GaAs substrate 1 and a semiconductor stacked-layered structure epitaxially grown thereon. Specifically, the semiconductor stacked-layered structure has an n type AlGaInP first clad layer 2, a GaInP active layer 3 and a p type AlGaInP second clad layer 4 which are successively stacked on the substrate. Second clad layer 4 has a striped ridge portion, with both sides of the ridge portion (i.e., non-ridge portions) being thinner than the ridge portion. A p type GaInP intermediate layer 5 and a p type GaAs contact layer 6 are formed on the ridge portion of second clad layer 4. An n type GaAs embedding layer 9 is formed on either side of the striped ridge portion. Light confinement in a horizontal direction is achieved by an effective refractive index difference Δn generated between the ridge portion and the non-ridge portion. A p-side electrode 10 is provided on the upper surface of the semiconductor stacked-layered structure, and an n-side electrode 11 is provided on the backside of substrate 1.
In the self-pulsation type semiconductor laser of the first conventional example, the light confinement in the horizontal direction parallel to active layer 3 is weaken by designing effective refractive index difference Δn to be small, so that the light intensity within the active layer is increased in the side regions corresponding to both sides of the stripe. The side regions can serve as the saturable absorption regions to realize the self-pulsation.
In the structure of the first conventional example, which is commonly used in a self-pulsation type semiconductor laser, the regions of the active layer corresponding to the both sides of the stripe are used as the saturable absorption regions. Thus, it is necessary to increase the light intensity in the regions, and the light confinement in a direction perpendicular to the active layer also needs to be set high. As a result, the divergent angle of the emitted light increases in the direction perpendicular to the active layer and thus the ellipticity of the beam cross section also increases. Further, the light intensity at the end face of the active layer increases, thereby lowering the COD (catastrophic optical damage) level.
To solve the foregoing problems, the present inventors have provided a self-pulsation type semiconductor laser in which it is unnecessary to increase the light confinement in the stacked-layered direction perpendicular to the active layer and then the ellipticity of the beam cross section is small, by incorporating a saturable absorption region in the embedding layer of the first conventional example (see Japanese Patent Laying-Open No. 9-181389). This self-pulsation type semiconductor laser is shown as a second conventional example in FIG. 12 in a schematic cross section.
The semiconductor laser shown in FIG. 12 is provided with an n type GaAs substrate 1, and a semiconductor stacked-layered structure grown thereon. The semiconductor stacked-layered structure includes an n type (Al0.65Ga0.35) InP first clad layer 2, a GaInP active layer 3 and a p type (Al0.65Ga0.35) InP second clad layer 4, which are stacked successively on the substrate. Second clad layer 4 has a striped ridge portion 4a, and regions (non-ridge portions) 4b on both sides of the ridge portion are thinner than the ridge portion. A p type GaInP intermediate layer 5 and a p type GaAs contact layer 6 are formed on the ridge portion of second clad layer 4. An n type Al0.6Ga0.4As layer 8d, an n type GaAs saturable absorption region 7, an n type Al0.6Ga0.4As layer 8d, and an n type GaAs embedding layer 9 are formed on either side of the striped ridge portion. A p-side electrode 10 is provided on the upper surface of the semiconductor stacked-layered structure, and an n-side electrode 11 is provided on the backside of substrate 1.
In the semiconductor laser of the second conventional example, carriers generated by absorption of laser light are accumulated in the saturable absorption region formed in the embedding layer thereby causing saturation of light absorption, so that the self-pulsation is achieved similarly as in the first conventional example. In the first conventional example, the active layer regions on both sides of the ridge can serve as the saturable absorption layers. However, electric current spreads in a lateral direction from the ridge, so that the carriers are introduced also into the active layer regions on both sides of the ridge. Thus, the change in absorbable light amount attributable to carriers generated by absorption of laser light is small. In the second conventional example, on the other hand, the saturable absorption layer is formed in the embedding layer where the current does not flow. Thus, the carriers do not exist in the saturable absorption layer during the state in absence of lasing. Accordingly, the absorbable light amount greatly changes depending on carriers generated by absorption of laser light. Further, in the second conventional example, since the excited carriers are generated in regions far away from the restart planes of crystal growth after formation of the ridge, trapping of the carriers is unlikely to occur at non-radiative centers in the vicinity of the restart planes of crystal growth, and thus the saturable absorption layer can function effectively.
In the second conventional example, although the light intensity in the saturable absorption region needs to be increased to cause self-pulsation, it is unnecessary to thicken the active layer for that purpose. Thus, it is possible to provide a self-pulsation type semiconductor laser having a small ellipticity of the beam cross section.
However, with the above-described self-pulsation type semiconductor laser having the saturable absorption region formed in the embedding layer, the self-pulsation stops at a high temperature of more than 70° C. or with an optical output of more than 6 mW.


Methods and apparatus to determine a concentration of nitrogen in a downhole fluid are described. An example apparatus to determine a concentration of nitrogen in a downhole fluid includes a fluid measurement unit to measure a first fluid composition and a density of at least a hydrocarbon and carbon dioxide in a sample of the downhole fluid. Additionally, the example apparatus includes one or more sensors to measure at least a pressure and a temperature of the sample. Further, the example apparatus includes a processing unit to determine a first theoretical density based on at least the first fluid composition, the temperature, and the pressure the sample. Further still, the example apparatus includes an analyzer to determine a first difference between the density of at least the hydrocarbon and the carbon dioxide in the sample and the first theoretical density. The first difference is associated with a concentration of nitrogen in the sample.

Downhole fluid analysis is often used to provide information in real time about the composition of subterranean formation or reservoir fluids. Such real-time information can be advantageously used to improve or optimize the effectiveness of formation testing tools during sampling processes in a given well (e.g., downhole fluid composition analysis allows for reducing and/or optimizing the number of samples captured and brought back to the surface for further analysis). More generally, collecting accurate data about the characteristics of formation fluid(s) is an important aspect of making reliable predictions about a formation or reservoir and, thus, can have a significant impact on reservoir performance (e.g., production, quality, volume, efficiency, etc.).
To increase production of certain reservoirs such as, for example, the Cantarell field in Mexico, nonhydrocarbon fluids such as nitrogen are injected into the formation or into adjacent wellbores. However, in some cases, such injected nitrogen may bypass the formation fluid and/or not obtain an equilibrium state in the formation fluid, thereby reducing the benefits gained by injecting nitrogen into the formation. While there are many benefits of injecting nitrogen into a formation, nitrogen is not detectable using known downhole fluid analysis techniques. Therefore, in an attempt to determine the nitrogen concentration within a formation, numerous samples are typically obtained from the formation and brought back to the surface for analysis. However, these known techniques do not provide real-time information, which delays the ability to make production and/or sampling decisions based on the results of the analysis.


A semiconductor light-emitting element includes a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The second electrode includes an ohmic electrode contacting the second semiconductor layer, and a semiconductor electrode made of a semiconductor layer contacting the ohmic electrode.

Light-emitting elements, in which nitride semiconductors are used, can emit light from near ultraviolet to red regions by virtue of the wide bandgap properties thereof, and accordingly, a variety of research on these light-emitting elements has been conducted. The general structure of a nitride semiconductor light-emitting element includes a semiconductor laminated structure, in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are laminated on a substrate. Typically, an electrode is provided on approximately the entire surface of the p-type nitride semiconductor layer.
In some types of nitride semiconductor light-emitting elements, a light transmissive electrode made of a metal oxide, such as indium tin oxide (ITO), is employed as the electrode that is provided on approximately the entire surface of the p-type nitride semiconductor layer, and light is emitted through the light transmissive electrode: The light transmissive electrodes made of ITO and the like have high resistivity compared with metal electrodes, such that the light transmissive electrodes must be increased in thickness to obtain sufficient current diffusibility. However, an increase in the thickness of the light transmissive electrodes may lead to an increase in the light absorbed by the light transmissive electrodes. In order to solve the aforementioned problems, Patent Literature 1 (Japanese Unexamined Patent Application Publication No. 2006-156590) discloses that a current diffusion layer made of metallic materials is further provided between the p-type nitride semiconductor layer and the light transmissive electrodes so as to compensate for the current diffusibility of the light transmissive electrodes, thereby reducing the thickness of the light transmissive electrodes.
However, while the amount is small, absorption of light occurs in a light transmissive electrode made of a metal oxide such, as ITO. Accordingly, a further increase in the light output of the semiconductor light-emitting element and the suppression of the absorption of light by the electrodes is desired.
It is an object of certain embodiments of the present invention to provide a semiconductor light-emitting element that suppresses the absorption of light by an electrode and realizes a further increase in optical output.