A filter for removing block deformation that occurs in an image signal is disclosed. Detected are a plurality of differentials each between at least two pixel signal levels on block boundaries between pixel blocks and in the vicinity of the block boundaries in response to pixel signals included in a plurality of pixel blocks that form an image. The differentials are compared with each other to obtain the maximum differential absolute value. The maximum differential absolute value is compared with a reference value to determine whether block deformation occurs in a pixel signal in the vicinity of a position on the pixel blocks where the maximum differential absolute value is obtained. The block deformation is removed when it is determined that the block deformation occurs in the pixel signal in the vicinity of the position on the pixel blocks where the maximum differential absolute value is obtained. It is determined that the block deformation occurs when the maximum differential absolute value is smaller than the reference value. A specific value is added to the pixel signal in the vicinity of the position on the pixel blocks where the maximum differential absolute value is obtained when it is determined that the block deformation occurs. A value pattern with the specific value may be selected from a plurality of predefined value patterns based on random numbers. The selected pattern is added to the pixel signal in the vicinity of the position on the pixel blocks where the maximum differential absolute value is obtained.

This invention relates to a block deformation removing filter, an image processing apparatus using the filter and a method of filtering image signals. Particularly, the present invention relates to a block deformation (or blocking noise) removing filter which is used to remove a block deformation (or blocking noise) taking place when for example an image is encoded by compression and the encoded image signal is decoded, and an image processing apparatus using the block deformation removing filter.
When an image is encoded by compression with high efficiency by way of an image compression coding technique, it may often present an image degradation associated with various compression coding techniques. For example, when an image is encoded by compression in units of block by way of the discrete cosine transformation (DCT), the block boundaries may become discontinuous to each another, thus resulting in block deformation.
The possible block deformation is most outstanding image quality degradation in a visual sense when a compression coding technique is applied in units of block, so that the improvement of the image quality requires minimization or removal of such deformation or discontinuity. So far in order to solve this problem, a block deformation removing filter is used to remove block deformation by applying filtering processing on block boundaries.
FIGS. 1A and 1B are illustrations showing how to remove the block deformation by way of a low-pass filter. FIG. 1A shows intensity values of decoded image before filtering, while FIG. 1B after filtering. In this connection, FIGS. 1A and 1B respectively show four scanning lines as representation which cross a block boundary in the image at right angle, and the heights of respective lines show intensity levels or values (shown by solid circles) of pixels lined up on each line.
FIG. 1A shows differentials A in intensity level taking place on every line crossing at right angle with the block boundary shown by a dotted line, where the differentials may be slightly different but essentially same, which cause a discontinuous block boundary resulting in a block deformation. Such a block deformation contributes to assume a mosaic pattern of a decoded image in those points, thus causing a significant visual difficulty.
Therefore, as shown in FIG. 1B, possible differentials xcex94 in the intensity level at the block boundary are smoothed by way of low-pass filter, thereby taking the straight edge off in intensity value, resulting in a minimized block deformation.
Block deformation may occur not only on block boundaries but also on other positions, for example, when motion compensation is carried out in moving picture coding.
However, a conventional block deformation removing filter can remove block deformation only on the block boundaries. And, hence, no complete removal of block deformation is achieved.
A purpose. of the present invention is to provide a block deformation removing filter, an image signal processing apparatus with the block deformation removing filter, a method of filtering an image signal, and a storage medium for storing software therefor, to remove block deformation that occurs not only a block boundary but also outside the boundary of an image signal.
The present invention provides a block deformation removing filter comprising: a detector responsive to pixel signals included in a plurality of pixel blocks forming an image to detect a plurality of differentials each between at least two pixel signal levels on block boundaries between the pixel blocks and in the vicinity of the block boundaries; a comparator to compare the differentials with each other to obtain the maximum differential absolute value; a determiner to compare the maximum differential absolute value with a reference value to determine whether block deformation occurs in a pixel signal in the vicinity of a position on the pixel blocks where the maximum differential absolute value is obtained; and a processor to remove the block deformation when it is determined that the block deformation occurs in the pixel signal in the vicinity of the position on the pixel blocks where the maximum differential absolute value is obtained.
Furthermore, the present invention provides an image processing apparatus comprising: a decoder to decode pixel signals included in a plurality of pixel blocks forming an encoded image; a detector responsive to the decoded pixel signals to detect a plurality of differentials each between at least two pixel signal levels on block boundaries between the pixel blocks and in the vicinity of the block boundaries; a comparator to compare the differentials with each other to obtain the maximum differential absolute value; a determiner to compare the maximum differential absolute value with a reference value to determine whether block deformation occurs in a pixel signal in the vicinity of a position on the pixel blocks where the maximum differential absolute value is obtained; and a processor to remove the block deformation when it is determined that the block deformation occurs in the pixel signal in the vicinity of the position on the pixel blocks where the maximum differential absolute value is obtained.
Furthermore, the present invention provides an image processing apparatus comprising: an encoder to encode predictive error signals for pixel signals included in a plurality of pixel blocks forming an encoded image; a decoder to decode the encoded predictive error signals; a detector responsive to the decoded predictive error signals to detect a plurality of differentials each between at least two pixel signal levels on block boundaries between the pixel blocks and in the vicinity of the block boundaries; a comparator to compare the differentials with each other to obtain the maximum differential absolute value; a determiner to compare the maximum differential absolute value with a reference value to determine whether block deformation occurs in a pixel signal in the vicinity of a position on the pixel blocks where the maximum differential absolute value is obtained; a processor to remove the block deformation when it is determined that the block deformation occurs in the pixel signal in the vicinity of the position on the pixel blocks where the maximum differential absolute value is obtained; a predictor to generate predictive signals based on output signals of the processor; and a generator to generate the predictive error signals by subtracting the predictive signals from the pixel signals.
Furthermore, the present invention provides an image processing apparatus comprising: a decoder to decode pixel signals included in a plurality of pixel blocks forming an encoded image; an adder to add the decoded pixel signals and predictive signals; a detector responsive to output signals of the adder to detect a plurality of differentials each between at least two pixel signal levels on block boundaries between the pixel blocks and in the vicinity of the block boundaries; a comparator to compare the differentials with each other to obtain the maximum differential absolute value; a determiner to compare the maximum differential absolute value with a reference value to determine whether block deformation occurs in a pixel signal in the vicinity of a position on the pixel blocks where the maximum differential absolute value is obtained; a processor to remove the block deformation when it is determined that the block deformation occurs in the pixel signal in the vicinity of the position on the pixel blocks where the maximum differential absolute value is obtained; and a predictor to generate the predictive signals based on output signals of the processor.
Furthermore, the present invention provides a method of filtering image signals comprising the steps of: detecting, in response to pixel signals included in a plurality of pixel blocks forming an image, a plurality of differentials each between at least two pixel signal levels on block boundaries between the pixel blocks and in the vicinity of the block boundaries; comparing the differentials with each other to obtain the maximum differential absolute value; comparing the maximum differential absolute value with a reference value to determine whether block deformation occurs in a pixel signal in the vicinity of a position on the pixel blocks where the maximum differential absolute value is obtained; and removing the block deformation when it is determined that the block deformation occurs in the pixel signal in the vicinity of the position on the pixel blocks where the maximum differential absolute value is obtained.
Furthermore, the present invention provides a computer readable storage medium storing a program for causing a computer to filter image signals comprising: a program code, responsive to pixel signals included in a plurality of pixel blocks forming an image, to detect a plurality of differentials each between at least two pixel signal levels on block boundaries between the pixel blocks and in the vicinity of the block boundaries; a program code to compare the differentials with each other to obtain the maximum differential absolute value; a program code to compare the maximum differential absolute value with a reference value to determine whether block deformation occurs in a pixel signal in the vicinity of a position on the pixel blocks where the maximum differential absolute value is obtained; and a program code to remove the block deformation when it is determined that the block deformation occurs in the pixel signal in the vicinity of the position on the pixel blocks where the maximum differential absolute value is obtained.

Block deformation removing filter, image processing apparatus using the same, method of filtering image signal, and storage medium for storing software therefor


A micro-vacuum device comprises a substrates an emitter having a sharp end formed above the substrate, a gate electrode provided above the emitter, and an anode having cooling means provided oppositely to the substrate above the gate electrode.

1. Field of the Invention
The present invention relates to a micro-vacuum device, and more particularly to a micro-vacuum device for large power or highly integrated large capacity.
2. Description of the Related Art
Recently, the development of a micro-vacuum tube using a field emission type cold cathode using developed Si semiconductor processing technique has been actively pursued. A conventional thermal cathode vacuum tube is used in a current density up to about 50 A/cm.sup.2 and a semiconductor device is usually used in a current density 10 to 20 A/cm.sup.2 about 100 A/cm.sup.2 at most, whereas a micro-vacuum microelement using this micro-vacuum tube technique is expected for use in a current density to 1,600 A/cm.sup.2 or more.
A representative example of such a micro-vacuum tube was disclosed in Journal of Applied Physics, Vol. 47, page 5248 (1976). A conical emitter for emitting electrons by an electric field formed in this field emission type cold cathode by a rotary oblique vapor-depositing method is known.
A representative example in which its anode is formed was disclosed in Applied Physics, Vol. 59, page 164 (1990), and Si field emission type cold cathode and an anode formed by using Si anisotropic etching is known.
A main section of this micro-vacuum tube has a structure as shown in FIG. 1. Above an Si substrate 1, a quadrangular pyramidal emitter 2 formed by Si anisotropic etching for emitting electrons is formed, and an insulating layer 3, a gate electrode layer 4, an insulating layer 5 and an anode 6 are sequentially laminated to be formed on a periphery of the emitter 2. They are contained in a vacuum vessel 7. The gate electrode layer 4 controls emission of electrons of the emitter 2. The electrons emitted from the emitter 3 are received by an anode 6.
Heretofore, a cold cathode using the abovedescribed emitter and gate electrodes has been applied to a limited example such as, for example, a display unit.
The conventional micro-vacuum tube obtains a large current density of 1,000 A/cm.sup.2 or more, though a power switching element such as a GTO (Gate Turn-Off thyristor) obtains a current density of about 10-20 A/cm.sup.2 at the time of operating the power switching element such as the GTO. Then, when a micro-vacuum tube having an on voltage of 2 V in the case of a current density of about 100 to 200 A/cm.sup.2 is formed, heat loss of energy loss particularly occurs at the time of operating. Thus, heat up to 200 to 400 W/cm.sup.2 is generated.
In this case, electrons transited in vacuum dissipate energy on a metal surface of its anode to abnormally increase its temperature, resulting in fracture and damage due to heat generation and fracture due to such as sputtering. Simultaneously, the emitter and gate electrodes are heated by heat radiation of the anode, and problems such as a current concentration at the emitter at a center of the cathode, adverse influence to other electronic devices, an electronic circuit connected to or installed at the periphery of the micro-vacuum tube occur.


The invention describes methods and apparatus to structure the air link resources, e.g. traffic channel, into segments of different transmission segment types and effectively use that novel structure. Different segment types are structured to achieve different performance characteristics. The segments may be aligned with different offsetting start times chosen to minimize the variation in the maximum number of segments starting at any given time slot. This staggering of segment start times minimizes waste in unused assignment messages due to structural inefficiencies, and has an overall effect of balancing the traffic. Information collected on the channel quality that various user's are experiencing may be used to classify the users. Stored information on different segment types, each with different benefits, is used in the allocation process to effectively match classified users to well-suited segment types to increase performance, balance the system, conserve power, and satisfy the users.

In a wireless communication system, air link resources generally include bandwidth over time or code over time. The air link resource that transports data and/or voice traffic is called a traffic channel. The design of the traffic channel, e.g., how to partition the bandwidth over time available and how to allocate the partitioned bandwidth over time between competing users, is important, as the traffic channel generally occupies the major portion of the system's air link resource.
A plurality of users, e.g., wireless terminals, throughout the cells of the system will be operating concurrently and will request use of the traffic channel for the transmission of data and/or voice traffic, e.g. segments of the traffic channel(s) of the system. The number and type of users will vary in the system over time and compete for those air link resources. The levels of resource requested by different types of users, e.g., a wireless data terminal vs a cell phone will also vary. The level of resource requested by a single user will change over time, e.g. a wireless terminal may transition between states from a sleep state to a hold state to an on state, with each state requiring different levels of resources. The levels of performance tolerated, requested, or required by different users in terms of: acceptable signal-to-noise levels, tolerated error rates, tolerated delays between requests for resources and grants of resources, power requirements, and burst data rates may also vary. The location of the user, e.g., wireless terminal, with respect to: the base station, adjacent cell/sector introducing interference, and obstructions may influence the selection of how to divide and allocate the available air link resource.
Certain structures of traffic segments, e.g., more bandwidth per segment maybe more advantageous for one set of problems, while other types of structures, e.g., less bandwidth but for a longer time duration may be more beneficial to address other concerns.
Based upon the above discussion, it should be apparent that there is a need for improved methods and apparatus for segmenting and/or using communications resources.

Methods and apparatus of transmitting user data using traffic channels


A sensor for detecting a substance in a physical space, having an RF energy emitter fed by a signal source on one side of the space and an RF energy receiving element coupled to a detector at an opposite side of the channel, spaced apart by a distance (r) selected so that when the signal wavelength (λ) changes based on the value of the dielectric constant (∈) of the particular substance in the physical space between the emitter and receiver, the mode of field type within the sensor channel changes between near field and intermediate or far field mode.

1. Field of the Invention
The present invention relates generally to the field of automated sensing systems and methods. More specifically, the present invention is directed to systems and methods for detecting the presence and/or absence of a substance (solid, liquid, gas, or mixture thereof), utilizing an RF energy emitter and RF energy receiver/detector for determining whether a substance is present within a defined physical space between the RF energy emitter and RF energy receiver/detector.
2. Description of Related Art
A wide variety of conventional systems and methods are available for determining whether a solid or liquid is present within a specified physical space utilizing an RF emitter and RF energy detector.
In US patent number 2004/0119637 Angel et al. describe a sensor that utilizes changes in the impedance of a transmission line to determine whether an ink cartridge has run out of ink.
U.S. Pat. No. 6,691,563 by Trabelsi et al. gives a method using a calibration equation to calculate the degree of moisture in particulate matter. In their method, the degree of RF signal attenuation is measured when passed through particulate matter and this is one of the factors used to derive moisture content.
Both U.S. Pat. Nos. 4,727,311 and 4,674,325 by Walker and Kiyobe et al. respectively transmit a microwave signal via horns to measure moisture.
U.S. Pat. No. 7,068,050 by Steele et al. measure the degree of attenuation of signal transmitted by a near field effect to determine the moisture content of lumber. This device operates strictly in the near field.

Sensor and method for detecting a substance


A connector apparatus for connecting a plurality of electrical wires of a standard size has a connector body having a cylindrical shape including an open end for accepting the wires, a closed end, an interior and an exterior surface. The connector body connects the wires and retains the wires in the interior when a twisting motion is applied to the connector body relative to an axis of the wires. The connector body is constructed of a transparent material that allows for visual inspection of the interior. A color marking for indicating the standard size of the wires is applied to a portion of the connector apparatus such that the interior remains visible for the visual inspection. A conductive coil can be positioned in a portion of the interior. The conductive coil has dimensions suitable for securely contacting the wires and aiding in the connecting of the wires.

Currently, there are no practical electrical wire connectors that allow a user to visually and clearly see the electrical connection on the spot in a twist-on or screw-on wire connector. Typical wire connectors are completely opaque, making it difficult or impossible for the user to see the wires inside in order to check the electrical connection or to see if one or more stripped wire ends have slipped out away from the other electrical wires being connected. Even if the user tries to look into the open end of the connector, the connection is difficult to see, due to the insulated wires taking up the only viewing area and the darkness inside a typical wire connector. Thus, a user cannot depend on knowing that he has made a proper and safe electrical connection with a typical wire connector. Known in the art is a clear tipped, push-on electrical wire connector that can connect a maximum of eight wires side by side in sizes of 18 to 12 gage for use only with solid, or stranded, copper wire and used in lighting & junction boxes. There has been no way previously in the art to use more than eight wires in the present clear-tipped push on wire connector or a method to ensure that the electrical current continues to flow through the circuit. Because of the design of these clear-tipped push on wire connectors, or any kind of push-on wire connectors, the actual stripped wires do not touch. They are held in place by a pressured metal piece that also completes the electrical connection. Due to the actual electrical conductors, not touching each other in the actual connection, if this clear tipped connector failed, for example, without limitation, if part of it broke, got crushed, or the pressured metal piece that holds the wires in place, weakened and wires started to slip out, the current would be broken. There is no known approach to validating a proper electrical connection within any king of push-on wire connector.
Known techniques addressing the foregoing problems are generally not cost effect. Moreover, known clear-tipped push on wire connectors cannot be used with wire larger than 12 gage, solid and stranded. Also, known clear-tipped push on wire connectors, have no practical application, other than fluorescent ballast lighting applications. There has been no prior-art twist on or screw on electrical wire connector through which the user can visually see the electrical connection or a twist on connection allowing the user to see that the conductive coil, which holds the insulated or non-insulated electrical conductors in place and helps the conductors twist as the wire connector is turned, is seated in to place and is not ready to fall out due to a faulty coil installation in the connector itself. There is also no existing method in the art to be able to see if one or more wire conductors is about to slip, or is slipping out of the bunch of wire conductors so that they may be fixed now, not later. There have been no prior art products, in a twist on or screw on electrical wire connector, that give apprentices, journeyman electricians, homeowners, general contractors, and everyone else that needs to connect two or more electrical wire conductors together, the confidence and assurance of knowing their electrical connection is safe and secure.
In view of the foregoing, there is a need for an inexpensive, twist-on electrical wire connector that allows the user to see the connection and ensures a proper connection.
Unless otherwise indicated illustrations in the figures are not necessarily drawn to scale.

Electrical wire connector device with visual connection validation


A carbon body, in particular a pre-baked anode of an electrolytic cell for the production of aluminium by the electrolysis of alumina in a molten fluoride electrolyte is treated over its surfaces to improve the resistance thereof to deterioration during operation of the cell by air and oxidizing gases released at the anode, by treating the body with a treating liquid comprising a precipitable boron-containing compound and an additive, said additive being present in an amount so that substantially no separate phase from said the precipitate of said boron-containing compound is formed upon curing. Suitable boron oxide additives include colloidal alumina, silica, yttria, ceria, thoria, zirconia, magnesia, lithia, monoaluminium phosphate, cerium acetate and mixtures thereof. The same treatment can also be applied to a carbon mass forming a Soderberg anode and to cell sidewalls.

Aluminium is produced conventionally by the Hall-Heroult process, by the electrolysis of alumina dissolved in cryolite-based molten electrolytes at temperatures up to around 950.degree. C. In Hall-Heroult cells, the anodes are usually pre-baked carbon blocks that are consumed by the electrochemical reaction, corroded by contact with the electrolyte and disintegrated by the air and/or oxidizing gases present. Soderberg anodes made of a coherent carbon mass which solidifies in situ are also used.
Pre-baked anodes for aluminium production are made of a matrix of petroleum coke with pitch as binder. Their production involves various phases including preparing and treating the starting materials, mixing, forming and calcining at high temperature, followed by securing the current supply member by rodding.
The resistance of that part of the anode which remains outside the bath during cell operation is of paramount importance, not only to decrease the amount of anode consumption above the theoretical requirement but also to reduce the formation of carbon dust. It is advantageous to reduce carbon dust, for it causes of a reduction in current efficiency and an increase in cell temperature, and must be eliminated when it collects on the bath surface.
Of the several attempts to protect the anode, none has so far been entirely satisfactory. The normal protection by aluminium spraying is costly and not always impervious. The oxidation of the carbon anodes, in the Hall-Heroult cell, outside the bath leads to a loss for the aluminium producer. Typically, instead of the theoretical consumption of 0.33 kg of carbon per ton of aluminium, often more than 0.43 kg is lost, the difference being caused mainly by air and CO.sub.2 burn.
Many elements or compounds catalyze the oxidation reaction of carbons but the inhibition of the oxidation reaction is more difficult to achieve. In general, the oxidation reactivity of carbon is reduced with absorbers, or with ceramic protection layers. Several absorber additives have been reported, such as metal, halogen compounds, and incorporated nitrogen. Ceramic protecting layers have been proposed, formed by low melting liquid glass, such as B.sub.2 O.sub.3, Cr.sub.2 O.sub.3, silica, etc. See, e.g., French patent no. 1,107,113 (1955) and U.K. patent no. 760,623.
The oxidation prevention treatment processes contemplated for the anode can be divided into two different groups, one is an additive added after the anode baking, the other is an additive added into the carbon paste. Until recently, only an aluminium coating protection treatment, or a thick layer of alumina and cryolite, has worked reasonably well for oxidation protection of commercial pre-baked anodes; however, these have several drawbacks, such as cost and difficulties in the cell operation. Several other oxidation prevention treatments have worked well in the laboratory but have fallen short of the expected performance when the same treatments have been applied to the anodes tested in commercial cells. No apparent reason has been forthcoming, and the discussion of such an effect has invariably been directed towards the possibility of the composition of the anode gases being the reason for such a difference.
When boron has been added to the anode paste in the form of elemental boron or boron compound, the oxidation rate of the carbon has been reduced but the consistent contamination of aluminium is usually unacceptable.
Recently, U.S. Pat. No. 5,486,278 (Manganiello et al.) has disclosed a treatment process which has been shown to significantly reduce the oxidation of the anode in the laboratory as well in commercial cell tests of pre-baked carbon anodes. This method comprises treating the anode or other component in a boron-containing liquid to intake the boron-containing liquid to a selected depth over parts of the surface to be protected. This selected depth is generally in the range of from 1 to 10 cm, preferably at least 1.5 cm and at most about 5 cm, preferably still at least about 2 cm and at most about 4 cm. This method was found to significantly reduce the oxidation of pre-baked anodes in laboratory tests and in commercial test cells. It was found unexpectedly that the greatly improved oxidation resistance obtained with this treatment is partly offset by a strength loss which could lead to burn-off after a critical weight loss when the anode is subjected to stress.
An article entitled "The Reactivity of Carbon Electrodes and Its Dependence on Organic Catalyst Inhibitors" by Gosta Wranglen from Jernkont. Ann. 142 (1958):10, recognizes that oxidation resistance in carbon materials can be increased by adding, or impregnating or coating such materials with certain phosphates of zirconium, by impregnating with fused aluminum and by impregnating or coating with siliciferous compounds, such as treatment liquids including approximately 10 weight percent of substances such as: Al.sub.2 O.sub.3, CaF.sub.2, CaB.sub.4 O.sub.7, B.sub.2 O.sub.3 as H.sub.5 BO.sub.3, P.sub.2 O.sub.5 as (NH.sub.4).sub.2 HPO.sub.4 and V.sub.2 O.sub.5 as NH.sub.4 VO.sub.3, in water. While the Wranglen article does mention the possibility of boron contamination, it does not suggest any way of taking advantage of the properties provided by impregnation with boron while avoiding contamination of the product aluminium due to excessive boron. In addition, the Wranglen article throughout recommends a minimum of at least 0.5 weight percent boron compound in the entire carbon substrate. Such a high content, is not permissible.
More recently, in U.S. patent application Ser. No. 08/584,047 (Sekhar et al.), filed Jan. 10, 1996, and in International application PCT/US97/00304, filed Jan. 10, 1997 (Selkar et al.), (together referred to as "the high strength applications"), there has been disclosed a treating liquid containing at least one soluble boron compound and at least one additive from the group consisting of aluminium compounds, calcium compounds, sodium compounds, magnesium compounds, silicon compounds, elemental carbon, and elemental aluminium, the additive being in the form of a powder, in suspension, as a colloid, or in solution at 80.degree. to 120.degree. C. A preferred formulation, contains, per 100 ml of water (including a small quantity of a surface-active agent), 2-10 grams of boron (as metal in the form of a boron compound) and as additives, aluminium acetate boric together with at least one of calcium acetate and calcium carbonate (the total amount of additives not exceeding the amount of boron). Treatment by this treating liquid avoids the aforementioned strength loss problems. As described in the high strength applications, even with the highest achievable levels of boron concentration, the problem of process contamination is avoided because the protective boron compounds are present only in the surfaces needing protection, and only to a depth of a few centimeters or less. International applications PCT/US97/01080 (Sekhar et al.), filed Jan. 27, 1997 and PCT/US97/02041 (Sekhar et al.), filed Feb. 7, 1997 addressed this concern by proposing a lower boron treating liquid ("the low boron applications"), which will provide comparable oxidation resistance and strength properties as provided by the treating liquids described in the high strength applications. The treating liquids of the low boron applications contains a borate of an alkali metal or of an alkali earth metal, such as a diborate, metaborate, tetraborate and the like. Preferably, sodium tetraborate (such as Na.sub.2 B.sub.4 O.sub.7.10H.sub.2 O) is used. More preferably, at least one nuclei-forming compound selected from aluminium acetate boric (such as CH.sub.3 CO.sub.2.Al(OH).sub.2.1/3H.sub.3 BO.sub.3), aluminum fluoride (such as AlF.sub.3.3H.sub.2 0), gibbsite (AM(OH).sub.3) or aluminium nitrate (such as AlNO.sub.3.9H.sub.2 O) is used in combination with the borate of sodium. As used herein, a "nucleus" is defined as a tiny particle of solid that forms from a liquid as atoms cluster together; because these particles are large enough to be stable, nucleation has occurred and growth of the solid can begin. Preferably, the low boron treating liquid is an aqueous solution.

Carbon bodies resistant to deterioration by oxidizing gases


A drive force control system includes an engine for controlling an output in accordance with an operation of an accelerator of a vehicle, a drive motor assisting a torque of the engine, an operation state detection portion detecting an operation state of the accelerator, and a control portion performing an advancing compensation control by the drive motor together with a drive control of the engine on the basis of an amount of change of the operation state of the accelerator generated within a predetermined time to provide greater acceleration than a case where the operation state of the accelerator is maintained.

A known vehicle which includes an engine and a drive motor for assisting an engine is disclosed. According to the known vehicle, the engine and the drive motor are cooperated so that the acceleration is attained in accordance with the accelerator pedal operation amount (accelerator pedal position). As disclosed in JP2010-167982A, for example, according to the known vehicle, target acceleration is determined in accordance with an operation state of the accelerator. Thus, even if the acceleration is compensated to achieve the targeted acceleration which is in accordance with the operation state of the accelerator, a delay is generated until a driver feels that the vehicle is accelerated sufficiently. Consequently, there is a drawback that that the driver cannot attain a feel of the desired acceleration, for example, when the vehicle starts moving.
A need thus exists for a drive force control system which is not susceptible to the drawback mentioned above.


The invention provides a method of erasure for a non-volatile semiconductor memory device having a floating gate. For a first time interval, a voltage having one polarity is applied to a control gate of said memory device under a bias application between source and drain regions so as to accomplish an erasure by a tunneling of electrons from said floating gate through a tunneling oxide film. For a second time interval after said first time interval, a voltage having an opposite polarity to said one polarity is applied to said control gate of said memory device without bias application between said source and drain regions so as to accomplish a convergence of a threshold voltage into a voltage level by a tunneling of electrons from a channel region of said memory device to said floating gate through said tunneling oxide film.

The invention relates to a method of erasure for a non-volatile semiconductor memory device having a floating gate.
One of non-volatile semiconductor memory devices is an electrically erasable and programmable read only memory (EEPROM) having a floating gate. FIG. 1 illustrates a typical structure of the electrically erasable and programmable read only memory (EEPROM) having the floating gate. The electrically erasable and programmable read only memory (EEPROM) having the floating gate illustrated in FIG. 1 is an n-type channel metal oxide semiconductor field effect transistor (MOSFET).
In FIG. 1, the electrically erasable and programmable read only memory (EEPROM) device has a p-type silicon substrate 11. Drain and source diffusion layers 16 and 17 are formed in upper portions of the p-type silicon substrate 11 by using a diffusion method such as an ion-implantation technique with an n-type dopant of arsenic or phosphorus. The formation of the n-type drain and source diffusion layers 16 and 17 defines a channel region on the p-type silicon substrate 11. A tunneling oxide film 12 is formed on the channel region in the p-type silicon substrate 11. A floating gate 13 made of polycrystalline silicon is formed on the tunneling oxide film 12. An inter-layer insulator 14 is formed on the floating gate 13. A control gate 15 made of polycrystalline silicon is formed on the inter-layer insulator 14. Such gate structure is formed by using normal processes such as a thermal oxidation of silicon, a chemical vapor deposition, a photo-lithography and a dray etching.
The operations of the electrically erasable and programmable read only memory (EEPROM) device will be described. The programming is accomplished by a hot electron injection through a tunneling oxide film 12 into the floating gate 13 thereby making a threshold voltage of the MOSFET device high. In contrast, the erasure is accomplished by a Fowler-Nordheim tunneling of electrons from the floating gate 13 through the tunneling oxide film 12 thereby making the threshold voltage of the MOSFET device low.
In such non-volatile semiconductor memory device, and thus the electrically erasable and programmable read only memory (EEPROM) device, a threshold voltage after erasure is variable, which has been known in the art. A large variation or a broad distribution of the threshold voltage after erasure is one of the most considerable problems in performances possessed by such non-volatile semiconductor memory device and thus the electrically erasable and programmable read only memory (EEPROM) device. Namely, the large variation or the broad distribution of the threshold voltage after erasure makes performances of the non-volatile semiconductor memory device so unstable that high speed and precise memory actions of the device are no longer realized.
In recent years, the minimization of the device size is considerably improved. The minimization of the device size renders such problem in the large variation or the broad distribution of the threshold voltage after erasure considerable. Thus, such non-volatile semiconductor memory device are forced into being engaged with such problem in the broad distribution of the threshold voltage after erasure operation.
It is, therefore, required to suppress or prevent the non-volatile semiconductor memory device or the electrically erasable and programmable read only memory (EEPROM) device to exhibit such large variation or broad distribution of the threshold voltage after erasure.
One of methods of suppressing the non-volatile semiconductor memory device to exhibit such large variation or broad distribution of the threshold voltage after erasure is disclosed in Technical Digest of 1991 International Electron Device Meeting, pp-307-310. The erasure method will be described in detail with reference to FIGS. 1, 2 and 3.
The non-volatile semiconductor memory device has the same structure as illustrated in FIG. 1. The feature sizes of the device are as follows. The gate length is 0.6 (0.8) micrometers. The gate width is 0.6 micrometers. The thickness of the tunnel oxide film 12 is 10 nanometers. The thickness of the inter-layer insulator 14 is 22 nanometers.
The erasure method, to obtain tight distribution of the threshold voltage after erasure, utilizes an avalanche hot carrier injection through the tunneling oxide film 12 into the floating gate after erasure, and thus utilizes a Fowler-Nordheim tunneling of the hot carriers. As the device size of the MOSFET is minimized, an electric field in the device becomes high. A high electric field makes the energy of electrons high thereby electrons conduct as hot electrons. Further, such high electric field causes an impact ionization at a drain junction. The impact ionization generates an electron-hole pair thereby exhibiting the avalanche breakdown.
FIG. 2 illustrates characteristics of the gate current I.sub.g versus the floating gate voltage V.sub.fg for the electrically erasable and programmable read only memory (EEPROM) device having the floating gate 13. When the floating gate voltage V.sub.fg is higher than the drain-source voltage V.sub.DS, the avalanche hot carrier injection through the tunneling oxide film 12 into the floating gate 13 occurs. Thus, the high electric field causes the impact ionization in a space charge region at an junction interface between the n-type drain diffusion layer 16 and the channel region. The impact ionization generates electron-hole pairs in a space charge region at an junction interface between the n-type drain diffusion layer 16 and the channel region. This causes the avalanche breakdown so that the carriers, and thus hot electrons or hot holes are injected through the tunneling oxide film 12 into the floating gate 13 of the device.
When the floating gate voltage V.sub.fg is lower than a balance point floating gate voltage V.sub.fg *, a channel electron induced avalanche hot hole injection (CEIA-HH) so occurs that the hot holes are injected from the channel region through the tunneling oxide film 12 into the floating gate 13 of the device. In contrast, when the floating gate voltage V.sub.fg is higher than a balance point floating gate voltage V.sub.fg *, a channel electron induced avalanche hot electron injection (CEIA-HE) so occurs that the hot electrons are injected from the channel region through the tunneling oxide film 12 into the floating gate 13 of the device. When the floating gate voltage V.sub.fg is much higher than a balance point floating gate voltage V.sub.fg *, a channel hot electron injection (CHE) so occurs that the hot electrons are injected from the channel region through the tunneling oxide film 12 into the floating gate 13 of the device. When the floating gate voltage V.sub.fg is equal to a balance point floating gate voltage V.sub.fg *, the channel electron induced avalanche hot hole injection (CEIA-HH) and the channel electron induced avalanche hot electron injection (CEIA-HE) are in balance.
If the floating gate voltage V.sub.fg is lower than a balance point floating gate voltage V.sub.fg *, the hot holes are injected through the tunneling oxide film 12 into the floating gate 13 of the device thereby the floating gate voltage V.sub.fg is increased and approaches the balance point floating gate voltage V.sub.fg *. As a result, the gate current I.sub.g does not occur because the channel electron induced avalanche hot hole injection (CEIA-HH) and the channel electron induced avalanche hot electron injection (CEIA-HE) are in balance at the balance point floating gate voltage V.sub.fg *. In contrast, if the floating gate voltage V.sub.fg is higher than a balance point floating gate voltage V.sub.fg *, the hot electrons are injected through the tunneling oxide film 12 into the floating gate 13 of the device thereby the floating gate voltage V.sub.fg is lowered and also approaches the balance point floating gate voltage V.sub.fg *. As a result, the gate current I.sub.g also does not occur because the channel electron induced avalanche hot hole injection (CEIA-HH) and the channel electron induced avalanche hot electron injection (CEIA-HE) are in balance at the balance point floating gate voltage V.sub.fg *.
Finally, to realize the stable threshold voltage after erasure, such electrically erasable and programmable read only memory (EEPROM) device exhibits a self-convergence of the floating gate voltage V.sub.fg into the balance point floating gate voltage V.sub.fg * after erasure thereby realizing the stable threshold voltage after erasure.
The erasure operation of the electrically erasable and programmable read only memory (EEPROM) device will be described with reference to FIG. 3. FIG. 3 illustrates waveforms of voltage applied to respective electrodes of the control gate 15, the source 17 and drain 16 during data erasure operation. The erasure operation makes the n-type drain diffusion layer 16 remain at 0 V during the erasure operation. A negative pulse voltage is applied to the electrode the control gate 15 so that the control gate 15 takes -13 V for 0.1 seconds, after which the voltage takes 0 V. Concurrently, a positive pulse voltage is applied to the electrode of the n-type source diffusion layer 17 so that the n-type source diffusion layer 17 takes +5 V for 0.6 seconds, after which the voltage takes 0 V.
For a first time interval of 0.1 seconds, the control gate 15 takes a negative voltage of -13 V and the source diffusion layer 17 takes a positive voltage +5 V. In this first time interval of 0.1 V, the discharge of electrons from the floating gate 13 by the Fowler-Nordheim tunneling occurs thereby accomplishing the erasure. Further, the over-erasure is so accomplished that the floating gate 13 takes a higher voltage value than the balance point floating gate voltage V.sub.fg * of 2.0 V. After that, a second time interval of 0.5 seconds follows the first time interval of 0.1 second. For the second time interval, the control gate 15 takes 0 V and the voltage of the source diffusion layer 17 remains at the positive voltage +5 V for a remaining time interval of 0.5 seconds. The voltage application to the electrode of the source diffusion layer 17 causes the channel carrier induced avalanche hot electron injection (CEIA-HE) thereby hot electrons are injected through the tunneling oxide film 12 into the floating gate 13. This makes the floating gate voltage V.sub.fg converge into the stable point of the balance point floating gate voltage V.sub.fg *. As a result, the threshold voltage in connection with the control gate 15 also converges into a stable voltage value thereby making the distribution of the threshold voltage after erasure tight.
The above erasure method for the electrically erasable and programmable read only memory (EEPROM) device having the floating gate, however, provides the following disadvantages. As described above, the above erasure method utilizes the avalanche breakdown phenomenon caused at the space charge region at the junction interface of the n-type drain diffusion layer 16 for accomplishment of the erasure. Then, the space charge regions at the junction interface of the n-type drain and source diffusion layers 16 and 17 respectively exhibit the impact ionization phenomenon which generates electron-hole pairs. The avalanche phenomenon subjects a damage to the drain and source diffusion layers 16 and 17 and thus causes the junction breakdown between the drain and source diffusion layers 16 and 17 and the channel region.
In addition, the above self-convergence process for threshold voltage after erasure requires the bias between the drain and source diffusion layers 16 and 17 thereby a large power consumption is required.

Method of erasure for a non-volatile semiconductor memory device


An electronic device comprising a population of quantum dots embedded in a host matrix and a primary light source which causes the dots to emit secondary light of a selected color, and a method of making such a device. The size distribution of the quantum dots is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the dots themselves, or of a mixture of light emitted from the dots and light emitted from the primary source. The dots desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.

The present invention relates to the use of quantum dots in light emitting diodes. The invention further relates to a light emitting diode which emits light of a tailored spectrum of frequencies.
Light emitting diodes (LEDs) are ubiquitous to modern display technology. More than 30 billion chips are produced each year and new applications, such as automobile lights and traffic signals, continue to grow. Conventional diodes are made from inorganic compound semiconductors, typically AlGaAs (red), AlGaInP (orange-yellow-green), and AlGaInN (green-blue). These diodes emit monochromatic light of a frequency corresponding to the band gap of the compound semiconductor used in the device. Thus, conventional LEDs cannot emit white light, or indeed, light of any xe2x80x9cmixedxe2x80x9d color, which is composed of a mixture of frequencies. Further, producing an LED even of a particular desired xe2x80x9cpurexe2x80x9d single-frequency color can be difficult, since excellent control of semiconductor chemistry is required.
LEDs of mixed colors, and particularly white LEDs, have many potential applications. Consumers would prefer white light in many displays currently having red or green LEDs. White LEDs could be used as light sources with existing color filter technology to produce fall color displays. Moreover, the use of white LEDs could lead to lower cost and simpler fabrication than red-green-blue LED technology. There is currently one technology for producing white LEDs, which combines a blue LED with a yellow phosphor to produce white light. However, color control is poor with this technology, since the colors of the LED and the phosphor cannot be varied. This technology also cannot be used to produce light of other mixed colors.
It has also been proposed to manufacture white or colored LEDs by combining various derivatives of photoluminescent polymers such as poly(phenylene vinylene) (PPVs). One device which has been proposed involves a PPV coating over a blue GaN LED, where the light from the LED stimulates emission in the characteristic color of the PPV, so that the observed light is composed of a mixture of the characteristic colors of the LED and the PPV. However, the maximum theoretical quantum yield for PPV-based devices is 25%, and the color control is often poor, since organic materials tend to fluoresce in rather wide spectra. Furthermore, PPVs are rather difficult to manufacture reliably, since they are degraded by light, oxygen, and water. Related approaches use blue GaN-based LEDs coated with a thin film of organic dyes, but efficiencies are low (see, for example, Guha, et al., J Appl. Phys. 82(8):4126-4128, Oct. 1997; III-Vs Review 10(l):4, 1997).
It has also been proposed to produce LEDs of varying colors by the use of quantum dots. Semiconductor nanocrystallites (quantum dots) whose radii are smaller than the bulk exciton Bohr radius constitute a class of materials intermediate between molecular and bulk forms of matter. Quantum confinement of both the electron and hole in all three dimensions leads to an increase in the effective band gap of the material with decreasing crystallite size. Consequently, both the optical absorption and emission of quantum dots shift to the blue (higher energies) as the size of the dots gets smaller. It has been found that a CdSe quantum dot, for example, can emit light in any monochromatic, visible color, where the particular color characteristic of that dot is dependent only on its size.
Currently available light-emitting diodes and related devices which incorporate quantum dots use dots which have been grown epitaxially on a semiconductor layer. This fabrication technique is suitable for the production of infra-red LEDs, but LEDs in higher-energy colors have not been achieved by this method. Further, the processing costs of epitaxial growth by currently available methods (molecular beam epitaxy and chemical vapor deposition) are quite high. Colloidal production of dots is a much more inexpensive process, but these dots have generally been found to exhibit low quantum efficiencies, and thus have not previously been considered suitable for incorporation into light-emitting diodes.
A few proposals have been made for embedding colloidally produced quantum dots in an electrically conductive layer, in order to use the electroluminescence of these dots for an LED, but such devices require a transparent, electrically conductive host matrix, which severely limits the available materials for producing LEDs by this method. Available host matrix materials are often themselves light-emitting, which may limit the achievable colors using this method.
In one aspect, this invention comprises an electronic device, comprising a solid-state light source, and a population of quantum dots disposed in a host matrix. The quantum dots are characterized by a band gap smaller than the energy of at least a portion of the light from the light source. The matrix is disposed in a configuration that allows light from the source to pass therethrough. When the host matrix is irradiated by light from the source, that light causes the quantum dots to photoluminesce secondary light. The color of this light is a function of the size of the quantum dots.
In one embodiment of this aspect, the quantum dots comprise CdS, CdSe, CdTe, ZnS, or ZnSe and may optionally be overcoated with a material comprising ZnS, ZnSe, CdS, CdSe, CdTe, or MgSe. The quantum dots may be further coated with a material having an affinity for the host matrix. The host matrix may be a polymer such as polystyrene, polyimide, or epoxy, a silica glass, or a silica gel. The primary light source may be a light-emitting diode, a solid-state laser, or a solid-state ultraviolet source. The color of the device is determined by the size distribution of the quantum dots; this distribution may exhibit one or more narrow peaks. The quantum dots, for example, may be selected to have no more than a 10% rms deviation in the size of the dots. The light may be of a pure color, or a mixed color, including pure white.
In a related aspect, the invention comprises a method of producing an electronic device as described above. In this method, a population of quantum dots is provided, and these dots are dispersed in a host matrix. A solid-state light source is then provided to illuminate the dots, thereby causing them to photoluminesce light of a color characteristic of their size distribution. The dots may be colloidally produced (i.e., by precipitation and/or growth from solution), and may comprise CdS, CdSe, CdTe, ZnS, or ZnSe. They may further comprise an overcoat comprising ZnS, ZnSe, CdS, CdSe, CdTe, or MgSe. The host matrix may be any material in which quantum dots may be dispersed in a configuration in which they may be illuminated by the primary light source. Some examples of host matrix materials are polymers such as polystyrene, polyimide, or epoxy, silica glasses, or silica gels. Any solid-state light source capable of causing the quantum dots to photoluminesce may be used; some examples are light-emitting diodes, solid-state lasers, and solid-state ultraviolet sources.
It may be desirable to tailor the size distribution of the quantum dots in order to tailor the color of light which is produced by the device. In one embodiment, the dots exhibit no more than a 10% rms deviation in diameter. The light may be of a pure color (corresponding to a monodisperse size distribution of quantum dots), or a mixed color (corresponding to a polydisperse size distribution of quantum dots) including white.
In a further aspect, the invention comprises a quantum dot colloid, in which quantum dots are disposed in a nonconductive host matrix. The quantum dots may be coated with a material having an affinity for the host matrix. When illuminated by a primary source of light of a higher energy than the band gap energy of the dots, the quantum dots photoluminesce in a color characteristic of their size distribution.
In one embodiment, the dots comprise CdS, CdSe, CdTe, ZnS, or ZnSe, optionally overcoated with a material comprising ZnS, ZnSe, CdS, CdSe, CdTe, or MgSe. The nonconductive host matrix may be a polymer such as polystyrene, polyimide, or epoxy, a silica glass, or a silica gel. In one embodiment, the dots are coated with a monomer related to a polymer component of the host matrix. The dots may be selected to have a size distribution exhibiting an rms deviation in diameter of less than 10%; this embodiment will cause the dots to photoluminesce in a pure color.
A related aspect of the invention comprises a prepolymer colloid. In this aspect, the invention comprises a liquid or semisolid precursor material, with a population of quantum dots disposed therein. The colloid is capable of being reacted, for example by polymerization, to form a solid, transparent, nonconductive host matrix. The quantum dots may have been coated with a material having an affinity for the precursor material. The precursor material may be a monomer, which can be reacted to form a polymer. The quantum dots may comprise CdS, CdSe, CdTe, ZnS, or ZnSe, and may optionally be overcoated with a material comprising ZnS, ZnSe, CdS, CdSe, CdTe, or MgSe. The dots may be selected to have a size distribution having an rms deviation in diameter of less than 10%.
In yet another aspect, the invention comprises a method of producing light of a selected color. The method comprises the steps of providing a population of quantum dots disposed in a host matrix, and irradiating the host matrix with a solid-state source of light having an energy high enough to cause the quantum dots to photoluminesce. The quantum dots may comprise CdS, CdSe, CdTe, ZnS, or ZnSe, and may further have an overcoating comprising ZnS, ZnSe, CdS, CdSe, CdTe, or MgSe. The host matrix may comprise polymers such as polystyrene, polyimide, or epoxy, silica glasses, or silica gels.
The host matrix containing the quantum dots may be formed by reacting a precursor material having quantum dots disposed therein (for example by polymerization). Alternatively, two or more precursor materials may be provided, each having a different size distribution of quantum dots disposed therein. These precursors may be mixed and reacted to form a host matrix, or alternatively, they may be layered to form a host matrix having different size distributions of quantum dots in different layers.
As used herein, the phrase xe2x80x9ccolloidally grownxe2x80x9d quantum dots refers to dots which have been produced by precipitation and/or growth from a solution. A distinction between these dots and quantum dots epitaxially grown on a substrate is that colloidally grown dots have a substantially uniform surface energy, while epitaxially grown dots usually have different surface energies on the face in contact with the substrate and on the remainder of the dot surface.
As used herein, the terms xe2x80x9cpurexe2x80x9d or xe2x80x9cmonochromaticxe2x80x9d color refers to a color which is composed of light of a single frequency. A xe2x80x9cmixedxe2x80x9d or xe2x80x9cpolychromaticxe2x80x9d color refers to a color which is composed of light of a mixture of different frequencies.
As used herein, a xe2x80x9cmonomerxe2x80x9d is a substance which can be polymerized according to techniques known in the art of materials science, and may include oligomers. A xe2x80x9crelated monomerxe2x80x9d of a polymer is a component monomer of the polymer, or a compound capable of being incorporated into the backbone of the polymer chain.

Quantum dot white and colored light emitting diodes


An isolation tool for use in a tubular. The isolation tool comprising gripping members and sealing members to engage and seal the isolation tool to an inner wall of the tubular at a desired location in the tubular. The isolation tool further comprising a locking system that allows the isolation tool to be set in a desired position within the tubular. The locking system prevents the isolation tool from any further movement which would unset it from the desired position.

In the drilling and production of hydrocarbon producing wells, a wellbore or borehole is drilled into the Earth. The wellbore is typically lined with a casing and cement is pumped into the annulus between the casing and the wall of the wellbore in order to isolate formations found in the wellbore from the casing. With the casing in place various operations may be performed in the wellbore, including but not limited to perforating, production, artificial lifting, a frac operation, cutting a lateral, etc. There are many applications in well drilling, servicing, and completion which require isolation and sealing off of particular zones within the well.
Packers, frac plugs and bridge plugs are commonly run into a wellbore and used to isolate one portion of a wellbore from another portion. A typical packer is run into a wellbore and then set using slips which engage the casing. Bridge plugs and frac plugs are installed in a similar manner to a typical packer. Packers, bridge plugs, and frac plugs are installed to temporarily block the wellbore and provide a barrier against which pressure can be developed to treat a hydrocarbon-bearing formation adjacent the wellbore. In all of these instances, the tool is typically disconnected from a run-in string of tubulars and left in place during the operation. Thereafter, the tools can be retrieved and brought to the surface.


Nanowire dispersion compositions (and uses thereof) are disclosed comprising a plurality of inorganic nanowires suspended in an aqueous or non-aqueous solution comprising at least one low molecular weight and/or low HLB (Hydrophile-Lipophile Balance) value dispersant. Methods of further improving the dispersability of a plurality of inorganic nanowires in an aqueous or non-aqueous solution comprise, for example, oxidizing the surface of the nanowires prior to dispersing the nanowires in the aqueous or non-aqueous solution.

Nanotechnology has been simultaneously heralded as the next technological evolution that will pave the way for the next societal evolution, and lambasted as merely the latest batch of snake oil peddled by the technically overzealous. Fundamentally both sides of the argument have a number of valid points to support their position. For example, it is absolutely clear that nanomaterials possess very unique and highly desirable properties in terms of their chemical, structural and electrical capabilities. However, it is also clear that, to date, there has been very little discussion of technology for manufacturing and integrating nanoscale materials into the macroscale world in a reasonable commercial fashion and/or how to assemble these nanomaterials into more complex systems for the more complex prospective applications, e.g., nanocomputers, nanoscale machines, electronic devices etc. A variety of early researchers have proposed a number of different ways to address the integration and assembly questions by waiving their hands and speaking of molecular self assembly, electromagnetic assembly techniques and the like. However, there has been either little published success or little published effort in these areas.
In certain cases, uses of nanomaterials have been proposed that exploit the unique and interesting properties of these materials more as a bulk material than as individual elements requiring individual assembly. For example, Duan et al., Nature 425:274-278 (September 2003), describes a nanowire based transistor for use in large area electronic substrates, e.g., for displays, antennas, etc., that employs a bulk processed, oriented semiconductor nanowire film or layer in place of a rigid semiconductor wafer. The result is an electronic substrate that performs on par with a single crystal wafer substrate, but that is manufacturable using conventional and less expensive processes that are used in the poorer performing amorphous semiconductor processes, and is more amenable to varied architectures, e.g., flexible and/or shaped materials. In accordance with this technology, the only new process requirement is the ability to provide a film of nanowires that are substantially oriented along a given axis. The technology for such orientation has already been described in detail in, e.g., International Publication Nos. WO 03/085700, WO 03/085701 and WO 2004/032191, as well as U.S. Patent Publication No. 20050066883 (the full disclosures of each of which are hereby incorporated by reference herein, in their entirety for all purposes) and is readily scalable to manufacturing processes.
In another exemplary case, bulk processed nanocrystals have been described for use as a flexible and efficient active layer for photoelectric devices. In particular, the ability to provide a quantum confined semiconductor crystal in a hole conducting matrix (to provide type-II bandgap offset), allows the production of a photoactive layer that can be exploited either as a photovoltaic device or photoelectric detector. When disposed in an active composite, these nanomaterials are simply processed using standard film coating processes that are available in the industry. See, e.g., U.S. Patent Publication No. 20040118448 incorporated herein by reference in its entirety for all purposes.
Regardless of the applications to which nanomaterials are to be put, there exists a need for the improved production, processing and integration of these materials into their ultimate application or device. In particular, one of the remaining challenges in the realization of functional nanostructures is to figure out ways to gain reliable control over their surface chemistry and to improve their dispersability in aqueous and non-aqueous media and the like to improve the handling and processability of these materials. The present invention meets these and a variety of other needs.

Nanowire dispersion compositions and uses thereof


A driving control apparatus comprising: an detecting device that detects objects; a preceding vehicle determining device that determines a preceding vehicle; a driving control device that executes a driving control; a control start intention detection device that detects an intention of a driver to start the control; and a control start intention detection device that detects an intention of a driver to start the follow-up control or the stop hold control, wherein the control state determination device sets to the follow-up control state when the preceding vehicle is detected by the preceding vehicle detection device and when the intention is detected, and sets to the stop hold state when the intention is detected while the vehicle is substantially in the stopped and no object is detected by the object detection device.

1. Field of the Invention
The present invention relates to a driving control apparatus that executes driving control of a vehicle by selecting a vehicle that is traveling in front of the vehicle so that it can follow that vehicle. More specifically, the present invention relates to a driving control apparatus that executes a low speed following (LSF) in which the vehicle can be started or stopped following the preceding vehicle in a relatively low vehicle speed region.
Priority is claimed on Japanese Patent Application No. 2004-320401, filed Nov. 4, 2004 and Japanese Patent Application No. 2005-298563, filed Oct. 13, 2005, the contents of which is incorporated herein by reference.
2. Description of the Related Art
In recent years, various types of driving control apparatuses have been developed which are aimed at reducing the driver's work load in operating the vehicle.
One type of such apparatuses is a driving control apparatus that executes a low-speed follow-up control that controls a driving state of a vehicle such that a predetermined inter-vehicle distance is maintained between the vehicle and a preceding vehicle when the vehicle is traveling at a low speed (including when the vehicle is stopped).
For example, Japanese Patent No. 3194305 discloses a technique in which when a vehicle is stopped at the front at a red light at an intersection or at the front at a railroad crossing, if a brake pedal is depressed and the vehicle speed is zero, the stopped state is maintained by a brake operating device. With this technique, even when the inter-vehicle distance to the preceding vehicle is increased, the brake hold state is not canceled. The brake hold state is canceled when the inter-vehicle distance to the preceding vehicle is equal to or less than a predetermined value and when a relative speed with respect to the preceding vehicle is a positive value.
Millimeter-wave radar apparatuses are widely used as devices for detecting a preceding vehicle. However, these radar apparatuses may fail to detect an object which is at a shorter distance than the detectable distance since the time interval between the time when the radar transmits electromagnetic waves and the time when the waves reflected by the object are received is short. Therefore, even when a vehicle is preceding the vehicle, the LSF control is not executed since the preceding vehicle is not detected when the distance from the preceding vehicle is very short, or when a pedestrian passes between the vehicles, for example. As a result, the driver is required to operate the brake manually and continuously in order to maintain the vehicle in the stopped state, which is an inconvenience to the driver. In addition, the driver may feel discomfort since a follow-up control is cancelled even when the vehicle is preceding the vehicle.
Accordingly, the present invention is directed to provide a driving control apparatus that is capable of continuing an execution of an LSF control even when no preceding vehicle is detected in order to enhance the convenience without discomforting the driver.


A guest-host assembly having a generally spheroidal host assembly formed of trimers of calixarene molecules in a hexagonal close-packed assembly and its preparation. The calixarene trimers are associated together predominantly by van der Waals forces to provide dilated channels having void volumes within the range of 100-200 Å3. A guest component, such as hydrogen, methane, or another hydrocarbon or halocarbon, is encapsulated within the dilated channels of the spheroidal host assembly and retained within the channels primarily by van der Waals forces. The guest-host assembly is stable at a temperature of 150° C. or higher. The temperature at which the onset of the release of the guest component occurs is within the range of 150-300° C.

Various calixarene-type compounds and self-assembled and spherical hexamers of calixarene derivatives have been proposed for various applications. For example, MacGillivray and Atwood in a paper entitled "A Chiral Spherical Molecular Assembly Held Together by 60 Hydrogen Bonds," Nature, Vol. 389, pp. 469-472, October 1997, disclose a self-assembly mechanism for methylcalix[4]resorcinarenes self-assembled as a spherical hexamer along with adventitious water molecules. MacGillivray et al disclose the use of methylene-bridged resorcinarenes to form hexameric superstructures. MacGillivray makes reference to exploring various applications including a chiral catalyst for chemical transformations, a micro-vesicle for drug delivery, and an intermediate for separation problems.
Subsequent to the MacGillivray/Atwood paper, Gerkensmeier et al in a paper entitled "Self-Assembly of 2,8,14,20-Tetraisobutyl-5,11,17,23-tetrahydroxyresorc[4]arene," European Journal of Organic Chemistry, 1999, pp. 2257-2262, discuss self-assembling systems based upon hydroxyresorcinarenes generated by the acid catalyzed condensation of 2-hydroxyresorcinol (pyrogallol) with aldehydes in polar media. Here, the self-assembly products were characterized as two-dimensional polymeric structures held together by hydrogen bonds. The Gerkensmeier et al paper does, however, report on the preparation of a spherical hexamer having an enclosed interior space populated by ten solvent molecules. However, attempts to replicate this hexamer structure were unsuccessful, and the structure was characterized by Gerkensmeier et al as being very fragile due to its being stabilized by weak hydrogen bonds.
The self-assembled host structures arrived-at through procedures, such as described in MacGillivray/Atwood and Gerkensmeier et al papers, are in the form of molecular structures which are maintained through chemical bonding such as covalent bonding or hydrogen bonding. Thus, as described in the MacGillivray/Atwood paper, the calixarene-based hexamers are sustained through intermolecular bonding formed predominantly through hydrogen bonds involving the adventitious water molecules.

Self-assembled calixarene-based guest-host assemblies for guest storage by van der Waals confinement

The Curators of the University of Missouri


An automotive video display console assembly 18 for installation in a vehicle 10 is provided. The automotive video display console assembly 18 includes a console housing 20. The automotive video display console assembly 18 further includes a horizontal support element 34 including a first end 36 engaging the console housing 20 and a second end 38. The second end 38 is movable between a support stowage position 42 and a horizontally extended position 44 horizontally distanced from the support stowage position 42. A video display element 26 is pivotably mounted to the second end 38 such that the video display 26 can be moved between a display stowage position 28 and a display active position 30 when the second end 38 is in the support stowage position 42. The video display 26 can be further moved to a display extended position 32 when the second end 38 is positioned in the horizontally extended position 44.

The present invention relates generally to an automotive video display console assembly and more specifically to an automotive video display console assembly with extendable display features.
Modern automotive vehicle designs incorporate an ever-increasing array of amenities and features. Where once the interior of a vehicle was largely utilitarian, it is presently being filled with a proliferation of multi-media devices intended to provide passengers with both information as well as entertainment. Central to many of these devices, such as maps, internet access, movies, and video games, is the use of a video display. The video display can interact with these features, as well as a wide variety of other features, to provide a central multi-media access point for passengers.
Issues arise, however, as a video display must coexist with a plurality of other features within the often space-restricted environment of the automotive interior. Video displays often represent non-insubstantially sized components that must be mounted within the interior without interfering with other automotive components. Furthermore, the nature of video displays is such that they must be positioned a comfortable distance from the viewer to allow easy viewing. If positioned too far from a viewer, a video display may be unreadable or may result in eye strain. Positioned too close to a viewer and a video display may equally result in viewer discomfort. Adding to these concerns, passengers do not come in a universal size or proportion and therefore present a variety of preferable positions for the video display.
Modern automotive video displays, however, provide little adjustment to accommodate these varying scenarios. Adjustment of the video screen, when present, commonly represents the ability to angle or rotate the screen. These adjustment features to not accommodate the concept of comfortable viewing distance. Furthermore, when the video display is mounted on the headliner, features such as sunroofs often effect its position. The mounting base for the video display, in these scenarios, can be positioned rearward in a vehicle to the point that the screen is positioned too close to rear passengers for comfortable viewing without strain. Present video display configurations place installation at odds with features such as sun roofs and can force customers to choose between equally desirable luxury options.
It would therefore be highly desirable to have an automotive video display console assembly with improved adjustment features that accommodated comfortable viewing distance adjustment. It would further be highly desirable to develop an automotive video display console assembly with expanded placement options within the automotive interior such that it is easily integrated with existing automotive options.

Extendable automotive video display console assembly


A heat dissipation module for an electronic device includes a base disk, a suction disk, a water guide and a cover. The base has a containing space and a plurality of cooling strips. The suction base is attached to the base disk and further includes a water chamber for receiving sucked water, an inlet and an outlet. The water guide is attached to the suction disk with a guide port at the periphery thereof. The cover closes the suction disk and is movably joined to a guide fan. When the heat dissipation module is full with fluid, the fluid can flow therein rapidly while the guide fan rotating such that the fluid is discharged from and flows into the heat dissipation module more effectively.

1. Field of the Invention
The present invention is related to a water cooled heat dissipation module and particularly to a heat dissipation module with which a guide fan is associated for speeding up circulation of cooling water to enhance efficiency of heat exchange.
2. Brief Description of the Related Art
Many electric circuits, which were presented in a form of electronic components, or electronic circuits, which were presented in a form of a plurality of integrated circuits connecting with each other, developed in the early stages has been replaced with a compact integrated circuit due to unceasing progress of the technology of the integrated circuit and the manufacturing process of the semiconductor. In other words, the single compact integrated circuit is capable of performing more functions and is capable of processing more complicated instructions and signals than the integrated circuit developed in the early stages.
The compact integrated circuit contains more electronic components such as FET (Field Effect Transistor) and COMS, more heat is generated when the compact integrated circuit is in operation. The heat generated from the integrated circuit developed in the early stages such as the conventional central processing unit can be dissipated sufficiently with mere cooling fins. However, the heat generated from the compact integrated circuit such as the central processing unit developed in the recent years is unable to be dissipated with the cooling fins only, and a heat dissipating fan becomes a required device in addition to the cooling fins. Normally, the cooling fins have a base for being attached to the integrated circuit such that the heat can be removed outward with the fan, which is disposed at the top of the cooling fin set. Because there is a distance between the base of the cooling fin set and the fan, the heat received by the base is incapable of transmitting to the top of the cooling fin set immediately. As a result, most of the heat accumulates at the base to deteriorate the efficiency of heat dissipation.
In order to increase the efficiency of heat dissipation, guide heat pipes are employed in the cooling fins to speed up removal of the heat with air. Further, the water cooling type heat dissipation is employed to add the water in the guide heat pipes, which are connected to a water tank, and a water pump is disposed to circulate the water between the water tank and the guide heat pipes for enhancing removal of the heat done with the guide heat pipes.
The preceding water cooling type heat dissipation allows the cooling water moving in the guide heat pipes to perform heat exchange in the guide heat pipes. However, the heat generating source such as the central processing unit contacts with the cooling fins directly instead of the guide heat pipes such that the heat received with the cooling fins are still incapable of being dissipated effectively.

Water cooled heat dissipation module for electronic device


A method for selectively generating suggested default values for I/O configurations is provided. The method identifies a first selection including a first input value for an I/O configuration. The method determines a set of remaining input options based on the first selection. The method accesses a set of decision trees based on the set of remaining input options and selects a decision tree of the set of decision trees based on the first input value. The method generates a suggested value for a subsequent selection for the I/O configuration and causes presentation of the suggested value and a user interface element representing the subsequent selection.

The present disclosure relates generally to methods for configuration interactions, but not exclusively, to a computer-implemented method for selectively enhancing interactive configuration interfaces using dynamically generated default values.
Some systems enable users to engage in I/O device configuration. Users of such systems manually edit subchannel set identifications for each device or device group. Users also manually edit subchannel set identifications individually through structured dialogues. Some configuration systems generate user interfaces with user-customized default values for I/O device configuration. Default values may be chosen based on usage of a value above a defined threshold. Some systems enable entering of default field values through statistical defaulting for I/O device configuration. Some systems use pre-selection of layout elements for data visualization in I/O device configuration. Some systems use missing value imputation to gather relevant data from multiple sources to build imputation models to predict missing variables.

Selective enhancement of interactive configuration interfaces

International Business Machines Corporation


A method of remotely monitoring the radiant energy (6) emitted from a turbine component such as a turbine blade (1) having a low-reflective surface coating (3) which may be undergoing potential degradation is used to determine whether erosion, spallation, delamination, or the like, of the coating (3) is occurring.

1. Field of the Invention
The invention relates to means to identify, monitor and take action upon potential delamination of ceramic coatings used as a thermal barrier for turbine components.
2. Background Information
Cobalt or nickel based superalloys of, for example, IN738, or ECV768 are used for making blades, vanes and other components of gas turbines. These turbines can operate at temperatures in the range of 1000 C. to 1600 C. and are generally protected by a series of protective coatings. The coatings usually comprise layers of metallic base coats, service formed aluminum oxide layers and a final ceramic thermal barrier coating ("TBC"). The TBC is usually made of yttria, ceria or scandia stabilized zirconia, as taught, for example, by U.S. Pat. Nos. 5,180,285; 5,562,998; 5,683,825 and 5,716,720 (Lau, Strangman, Bruce et al., and Murphy, respectively). Long term exposure of these ceramic coatings to the hostile, high temperature, abrasive environment in which such turbines operate can cause phase destabilization, sintering, microcracking, delamination and ultimately spallation within the coating layers, exposing the superalloy component to degradation or failure and requiring expensive repairs.
Many attempts have been made to non-destructively test such coated superalloy metal surfaces for non-obvious, subcoating degradation. U.S. Pat. No. 4,647,220 (Adams et al.) teach a system to detect corrosion and stress corrosion cracking of painted metal structures, utilizing infrared thermographic techniques to detect temperature differentials caused by the difference in thermal conductives between corroded metal and uncorroded metal. A scanner can be used to produce a television-compatible, video output signal of the thermophysical characteristics it is viewing. This system is used primarily on stationary military aircraft. U.S. Pat. No. 5,294,198 (Schlagheck) teaches a system to determine defects in commercial products by obtaining an infrared image of the product while it is being stimulated. An infrared television monitor supplies a signal to a color monitor where hot or cold temperature regions appear as red or blue respectively. Defects can be determined by an inspector or a computer. This system can also be incorporated into production lines, and eliminates prolonged vibration and/or temperature cycling as tests of commercial products.
In U.S. Pat. No. 5,272,340 (Anbar) teaches an infrared imaging system which simultaneously generates temperature, emissivity and fluorescence, for use in clinical diagnosis and management of skin disorders, to determine true skin temperature as a tool in the treatment of malignancies, burns and the like. U.S. Pat. No. 5,608,845 (Ohtsuka et al.) relates to predicting the remaining lifetime, by parts degradation analysis, of, for example, carbon seals, electrically operated values, control rod drivers, and the like, in locations such as electric power plants. This appears to be accomplished by establishing a series of lifetimes based on experimental aging degradation data.
In U.S. Pat. No. 5,552,711 (Deegan et al.), probable turbine blade failure is determined by measuring specific ions emitted by hot spots. The invention relates to electromagnetic energy radiated by ions that are created as combustion gas erodes and ionizes materials in these hot spots using spectral detectors looking for characteristic ions. However, this system requires failure to occur, for example by melting of components and detection of ions. Turbine blade temperature monitors are taught by U.S. Pat. No. 5,306,088 and 5,832,421 (Zoerner and Santoso et al., respectively). Zoerner requires an actual fiber-optical cable actually disposed inside a turbine component. Santoso et al. require measurement of pressure and temperature at locations other than the blades and then simulating blade temperature values using a water stream cycle analysis program and then training an artificial network so that it can learn to recognize a failure by estimating blade temperature.
In U.S. Pat. No. 4,764,025 (Jensen), a temperature detection pyrometer is used to determine turbine blade temperature from radiation reflected and emitted from the blade. The system substantially reduces the effect of reflected radiation from flame or hot carbon particles. Detected radiation is divided into two channels and the output of one of the detectors is weighted relative to the other. The difference between the factored output from one detector and the output from the other detector is provided to a difference amplifier to provide a signal directly related to the temperature of the turbine blade.
There is still special need, however, to be able to sense potential failure situations for complex, moving turbine components having ceramic coating layers, by utilizing a very fast sensor system. This would require measuring relative spatial/time radiance using an expert system, and some sort of a degradation model that will generate advisory information and actively avert failure. This system must identify very small hot spots on low-IR emittance ceramic surfaces, detect spalling and debond areas, measure their growth, and forecast and prevent failure.

Method and apparatus for measuring on-line failure of turbine thermal barrier coatings


A virtual keyboard rendered on a separate computing device is independent of the user's computer. A virtual keyboard displayed on the user's computer screen is blank without any alphanumeric characters. Another virtual keyboard displayed on the user's independent computing device has a randomly generated layout of alphanumeric characters on a keypad. The user enters a password by pressing the blank keys of the blank keyboard on his computer screen with reference to the other virtual keyboard. The position sequence of these entered keys is sent to an application on a remote server computer. The remote server computer shares a virtual keyboard having the randomly generated layout of characters with the independent computing device via an online or off-line technique. When online, an encoded image of the encrypted layout is sent to the client computer and displayed for scanning by the device. When off-line, both the application and the device generate the same random key sequence by using the same pseudo random number generator and the same seed value.

As computers become more prevalent and users are continually asked to log in to Web sites with a user name and password, identity theft and password hacking are two of the top concerns for both individuals and businesses worldwide. More and more Web sites where user accounts are required (e.g., applications, portals, services, etc.) are asking users to choose strong passwords in addition to changing their passwords at fixed intervals in order to prevent the password from being stolen and from the account being compromised. Unfortunately, it is difficult for most users to remember strong passwords because they are more complicated.
Even when strong passwords are used, and when password are changed frequently, these methods are still unable to protect users from password theft, keyboard hooking malware, key logging malware or screen recording malware. In other words, even if a user uses a strong password with a virtual keyboard, a hacker still able to steal a password fairly easily by use of these malicious programs.
Existing solutions to this problem are not always optimal. Some accounts use two-factor authentication in which a second factor is sent over SMS. Unfortunately, this solution relies upon SMS which can often be compromised by rogue mobile applications. It is not considered a secure solution considering the possible weak authentication mechanism in the GSM network. Alternatively, the authenticator-based solution is considered an auxiliary method to prove that the current user is the actual owner of the password. But, users are still required to input their user name and password before this authenticator works, thus opening the user up to possible password theft.
Moreover, other techniques such as Google Authenticator and RSA SecureID provide a verification code that is supposed to be secure. But, this verification code is valid for at least one minute, thus, if the stolen, the code can be used by a hacker to login it to a user account using stolen login information and obtain personal information.
Therefore, further techniques and systems are desirable to thwart such attackers and malicious software in order to protect user passwords.

Password protection with independent virtual keyboard


In one embodiment of the invention, a method is disclosed to generate a clock output signal with selected phase. The method includes selecting a phase delay for the clock output signal; charging a capacitor with a first weighted current during a first phase input clock, charging the capacitor with a second weighted current during a portion of a second phase input clock, and determining if a voltage across the capacitor is greater than or equal to a threshold voltage to generate a first edge of the clock output signal with the selected phase delay. The first weighted current may have a weighting of N out of M to charge the capacitor with a predetermined rate of change in voltage in response to the selected phase delay. The second weighted current may have a weighting of M out of M to charge the capacitor with a constant rate of change.

High speed serial communication is becoming more common with electronic systems and electronic components. For example, high speed serial interconnections may be used for input ports and output ports for integrated circuit devices to meet data transmission requirements of higher capacity chips that may be pin limited, such as systems on chip (SOCs) or application specific integrated circuits (ASICs). Other wired or cable applications of high speed serial communication is for system bus backplanes and communication network systems.
To facilitate data transmission over a serial interconnect or data link, a clock may be embedded into the serial data stream of data bits prior to transmission at a transmitting end. At the receiving end of the serial data link, clock and data are recovered from the received serial clock/data signal.
Some industry standards specify high speed serial communication links such as PCIe, CEI-6, XAUI (IEEE 802.3ae), SATA, and Fiber-channel. Data transfer rates for serial communication links may be at high data bit speeds such as in the range from 2.5 gigabits per second (Gb/s) to 20 Gb/s or more.

Phase interpolator circuit with two phase capacitor charging


A drive assembly has a plurality of piston/cylinder drive units each of which has a piston component longitudinally fixed to a fixed transverse frame member. First and second working chambers in a movable cylinder component are connected to pressure and return through passageways extending through the piston rod of the piston component. A ball member on the outer end of the piston rod is received in a socket structure that has passageways communicating with the piston passageways. A manifold structure is secured to the socket structures and houses a plurality of internal valves including a switching valve with a single external pressure port and a single external return port. The socket structures and manifold structure have abutting surfaces that form internal fluid connections to allow operation of the conveyor without external fluid ports other than the two ports of the switching valve.

Reciprocating slat conveyors are generally known. A common type of conveyor has a plurality of conveyor slats arranged in a plurality of slat sets. A piston-cylinder drive unit is provided for each slat set. A drive beam interconnects each drive unit with the slats in its set. This general arrangement has many variations. The present invention is directed toward providing a conveyor of this type that is easily installed in a structure, has components accessible for maintenance, and can be made in a compact form that is structurally strong. It is also directed toward providing a drive assembly for a reciprocating conveyor.

Drive assembly for reciprocating slat conveyor