Some of the embodiments of the present disclosure provide an apparatus comprising a voltage controlled oscillator (VCO) having a first transistor, a first resistor operatively coupled between a first terminal of the first transistor and a first node, a first capacitor operatively coupled between a second terminal of the first transistor and the first node, and a second capacitor operatively coupled to the first node, wherein the first capacitor and the second capacitor forms a capacitive voltage divider. Other embodiments are also described and claimed.

FIG. 1 schematically illustrates an exemplary differential colpitts voltage controlled oscillator (VCO) 100. The differential colpitts VCO 100 is generally well known to those skilled in the art. The VCO 100 of FIG. 1 may include differential pair transistors T1 and T2, and a tank of inductors L1 and L2 and varactors C3 and C4. The transistor pair T1 and T2 may be cross coupled such that the drain of one transistor is operatively coupled to the gate of the other transistor. The transistors T1 and T2 may be biased by respective bias current sources Ibias1 and Ibias2. The drain terminals of transistors T1 and T2 may form the two output terminals O/P1 and O/P2 of the VCO 100. The source terminals of transistors T1 and T2 may be operatively coupled to nodes 122 and 124, respectively. A resonator circuit of the VCO 100 may include the series of inductors L1 and L2 and the series of varactor C3 and C4. A supply voltage Vdd (operatively coupled at the centre tap of the inductors L1 and L2) and a control voltage Vcontrol (operatively coupled in between the varactors C3 and C4) may control the output voltage swing and frequency.
The VCO 100 may also include capacitors C11 and C12 that form a capacitive voltage divider, where capacitor C11 may be operatively coupled to node 122 and drain terminal of the transistor T1, and capacitor C12 may be operatively coupled between node 122 and the ground. Similarly, capacitors C21 and C22 may form a capacitive voltage divider, where capacitor C21 may be operatively coupled to node 124 and drain terminal of the transistor T2, and capacitor C22 may be operatively coupled between node 124 and the ground.
For some applications, it may be desirable that the output voltage of the VCO 100 has a relatively higher voltage swing. For a given frequency, higher output voltage swing may increase a slew rate of the output voltage, and thus may result in relatively lower phase noise. An increase in the output voltage swing may be achieved, for example, by increasing the supply voltage Vdd, appropriately tuning one or more inductors and/or capacitors of VCO 100, and/or the like.
Also, with improvements in integration of semiconductor devices and developments in semiconductor manufacturing technology, thin oxide based low voltage devices are increasingly used in various applications. For example, thin oxide based low voltage transistors are increasingly used in radio frequency (RF) applications, which may require the transistors to operate at GHz frequencies. To ensure faster switching at GHz frequencies, the transistors T1 and T2 may be low voltage thin oxide transistors, i.e., may operate at a relatively low operating voltage (e.g., as compared to thick oxide devices rated for higher operating voltage). Such low voltage transistors, by virtue of being based on thin gate oxide, may be able to withstand a relatively lower level of stress voltage.
For the purpose of this disclosure and unless otherwise mentioned, a maximum stress tolerance voltage of a transistor may refer to approximately a maximum voltage that any two terminals of a transistor may be able to tolerate or withstand, without stressing the transistor (e.g., without adversely affecting one or more intrinsic characteristics of the transistor, such as mobility, threshold voltage of the transistor, intrinsic noise traits etc). For example, for a given submicron CMOS process, the operating voltage of transistors T1 and T2 may be about 1.2 volts (V), and the transistors T1 and T2 may have a safety margin of about 20%. Accordingly, the maximum stress tolerance voltage of transistors T1 and T2 may be about 1.4 V. That is, if the maximum voltage across any two terminals of transistors T1 and T2 (e.g., Vgs, Vgd, Vds) exceeds 1.4 V, the transistor is assumed to be operating under stress, which may degrade the performance (e.g., degrade the yield and noise) of the transistor, thereby degrading the phase noise of the VCO.
As previously discussed, for some applications, it may be desirable to have a higher output voltage swing of the VCO 100, for a given frequency of oscillation. However, if the output voltage swing is increased (e.g., by increasing Vdd), the maximum voltage experienced across any two terminals of the transistor T1 and/or T2 may also increase, and may exceed the maximum stress tolerance voltage of the transistors. For example, for nominal values of various components of the VCO 100 and for an output voltage swing of 1.2 V, the voltage swing of Vgs and/or Vds of the transistors T1 and T2 may exceed 1.4 V for about 15% of the duty cycle time. Thus, in case the transistors T1 and T2 are thin oxide low voltage transistors with a maximum stress tolerance voltage of 1.4 V, the transistors T1 and T2 may be in stress for about 15% of time the VCO is oscillating. The amount and duration of stress on the transistors may increase further with a further increase in the output voltage swing. For example, the transistors T1 and T2 may be in stress for about 22% of the duty cycle time for an output voltage swing of about 1.3 V
Thus, the VCO 100 with thin oxide low voltage transistors T1 and T2 may not be able to handle a relatively large output voltage swing (e.g., output voltage swing of 1.2 V or more) without stressing the transistors T1 and T2.

Stress tolerant differential colpitts voltage controlled oscillators


A method and apparatus are disclosed for determining more accurately, in a radio environment with time dispersion, the distance between a radio receiver and radio transmitter, by special processing of received radio signals that have been transmitted repeatedly from the same radio transmitter and are possibly subject to multipath propagation. The Time of Arrival (TOA) of the received radio signals is repeatedly estimated using channel power profiles. A TOA value near the minimum occurring TOA is selected wherein each estimated TOA is derived from incoherent integration of a randomly chosen number of the received bursts having the same known bit sequence, in order to eliminate the influence of noise.

1. Technical Field of the Invention
The present invention relates in general to the mobile radio communications field and, in particular, to a method and system for use in determining the geographical position of a mobile radio terminal.
2. Description of Related Art
Commonly-assigned U.S. patent application Ser. No. 08/917,577 to Hagerman et al., describes a method for determining the position of a mobile radio terminal (hereinafter mobile station or MS), which makes use of uplink Time of Arrival (TOA) and Direction of Arrival (DOA) measurements. Slight mention is made in that disclosure about repeating the same uplink signal a number of times, in order to improve the accuracy of the TOA determinations. However, the disclosure does not provide any details about how this improvement can be achieved.
Commonly-assigned U.S. Patent Application Serial No. (Attorney docket no. 27946-00353), which has been filed on the same day as the present application, discloses a method and apparatus for providing a "prime" uplink signal from a MS whose position is to be determined. The present invention is related by subject matter to the above-described Patent Applications and teaches how to process a repeated uplink signal, such as, for example, the "prime" uplink signal from a MS whose position is to be determined.
The CME 20 System, which is a Global System for Mobile Communications (GSM) implementation manufactured by Telefonaktiebolaget LM Ericsson, sends uplink messages with a Timing Advance (TA) to compensate for the radio signal propagation delay caused by the distance between the radio base station (BS) and the MS. The TA value is determined by a procedure of selecting the smallest TA value from a number of measurements made by the BS on several access bursts that have been transmitted by the MS. For TA value determinations, this procedure solves the radio signal multipath propagation problem (i.e., when the signal propagates along a line of sight path and also along one or more reflected paths). This procedure is hereinafter referred to as the "minimum time" method.

Method and system for determining position of mobile radio terminals


The application provides a SCR and a manufacturing method thereof. The SCR comprises: a P-type heavily doped region 20 and an N-type lightly doped region 28 forming an anode formed on the upper part of an N-type well 60, a P-type heavily doped region 26 and an N-type heavily doped region 24 forming a cathode formed on the upper part of a P-type well 70, an active region of the N-type well 60 is between the N-type lightly doped region 28 and an interface of the N-type well 60 and the P-type well 70, a STI is provided between the N-type heavily doped region 24 and the interface, the STI is adjacent to the N-type heavily doped region 24, and an active region of the P-type well 70 is provided between the STI and the interface. The present application can improve trigger voltage of the SCR and save layout area.

The electro-static discharge protection design of a high-voltage circuit is always a technical problem, because unlike an ordinary low-voltage device, a high-voltage device (such as an LDMOS), which is the core of the high-voltage circuit, is inapplicable to the electro-static discharge protection design due to very poor characteristics presented by a snapback curve of the high-voltage device, which are reflected in the following two points: 1. a holding voltage (Vh) is excessively low, usually greatly lower than an operating voltage of the high-voltage circuit, so a latch-up effect is easy to occur during normal operation of the high-voltage circuit; and 2. a secondary breakdown current (thermal breakdown current, It2) is excessively low, resulting from localized current crowding occurring when the LDMOS discharges an ESD current due to the structural characteristics of the device.
Therefore, the following two ideas are usually adopted to achieve the electro-static discharge protection design of the high-voltage circuit in the industry: 1. the structure of the high-voltage device used in an electro-static discharge protection module is adjusted to optimize the snapback curve, so that the high-voltage device is applicable to the electro-static discharge protection design, and the adjustment, however, is difficult to be implemented in practice because of the structural characteristics of the high-voltage device; and 2. a specific number of low-voltage electro-static discharge protection devices are connected in series to form an electro-static discharge protection circuit that can hold a high voltage. Regarding the second idea, because the characteristics of the low-voltage electro-static discharge protection devices are relatively easy to be adjusted and controlled, the industry, in particular integrated circuit design companies, usually prefers the method of connecting a specific number of low-voltage electro-static discharge protection devices in series to implement the electro-static discharge protection design of the high-voltage circuit.
Due to the need for an electro-static discharge protection design window of the high-voltage circuit, there are specific requirements on the snapback characteristics of the low-voltage electro-static discharge devices, that is, the snapback is usually required to be as weak as possible and it is better that there is no snapback, that is, the holding voltage of the snapback is basically the same as a trigger voltage. The low-voltage PMOS device is a common no-snapback electro-static discharge protection device, because a parasitic PNP triode current gain thereof is relatively small when the snapback occurs. However, the defect of the low-voltage PMOS devices lies in a relatively small secondary breakdown current (It2) of the snapback, so the industry continuously performs researches to develop a no-snapback electro-static discharge protection device having a relatively high secondary breakdown current.
The industry proposed a novel no-snapback silicon controlled rectifier (SCR) in 2015. Referring to FIG. 1, the silicon controlled rectifier 100 includes a P-type substrate 180, the P-type substrate is provided with an N-type well 160 and a P-type well 170 therein, and the N-type well 160 and the P-type well 170 are adjacent to each other to form a PN junction at an interface between the N-type well 160 and the P-type well 170. A P-type heavily doped region 122 is formed at the upper portion of the interface between the N-type well 160 and the P-type well 170. An N-type heavily doped region 128, a P-type heavily doped region 120, and an N-type heavily doped region 130 are sequentially formed at the upper portion of the N-type well 160. The P-type heavily doped region 120 and the N-type heavily doped region 130 form an anode A of the silicon controlled rectifier 100. The N-type heavily doped region 128 is close to the P-type heavily doped region 122, and the N-type heavily doped region 128 is spaced from the P-type heavily doped region 122 at a specific distance. The N-type heavily doped region 128, the P-type heavily doped region 120, and the N-type heavily doped region 130 are separated from each other by shallow trench isolation 110. A P-type heavily doped region 126 and an N-type heavily doped region 124 which form a cathode K of the silicon controlled rectifier are formed at the upper portion of the P-type well 170. The N-type heavily doped region 124 is close to the P-type heavily doped region 122, and the P-type heavily doped region 122, the N-type heavily doped region 124, and the P-type heavily doped region 126 are separated from each other by the shallow trench isolation 110.
The experimental data of the no-snapback silicon controlled rectifier shown in FIG. 1 indicates that, if the size of the N-type heavily doped region 128 or the P-type heavily doped region 122 reaches a specific level (greater than 4 um), the silicon controlled rectifier presents the no-snapback characteristics, thereby satisfying the requirements of applying low-voltage devices connected in series to the electro-static discharge protection design of the high-voltage circuit. However, the defect of the novel no-snapback silicon controlled rectifier lies in a relatively large device size, in particular a relatively large layout area in multi-stage series connection.
On the basis of the no-snapback silicon controlled rectifier show in FIG. 1, an existing Chinese patent (authorized announcement number: CN108183101B) provides a no-snapback silicon controlled rectifier as shown in FIG. 2 in the industry. A cathode portion of the silicon controlled rectifier 200 shown in FIG. 2 is the same as a cathode portion of the silicon controlled rectifier 100. Corresponding to the N-type heavily doped region 128 in floating connection, an N-type heavily doped region 228 in FIG. 2 is directly connected to an anode A, so that the N-type heavily doped region 228 can effectively reduce the probability of holes injected from a P-type heavily doped region 220 into an N-type well 260 then migrating to an interface between the N-type well 260 and a P-type well 270, that is, the efficiency of the use of the N-type heavily doped region 228 as a guard ring is improved, so the width of the N-type heavily doped region 228 can be designed to be smaller to save the layout area. In addition, the N-type heavily doped region 228 also serves as a pick up point of the N-type well 260, so the N-type heavily doped region 130 serving as a pick up point of the N-type well 260 in the existing no-snapback silicon controlled rectifier shown in FIG. 1 can be removed, thereby further saving the layout area.
However, with the development of the semiconductor technology, the pursuit of saving the layout area is increasing. Therefore, in order to further reduce the layout area occupied by the no-snapback silicon controlled rectifier, it is necessary to further increase the trigger voltage of the no-snapback silicon controlled rectifier, so as to reduce the number of series stages required by application of the multi-stage series connection to the high-voltage electro-static discharge protection.
In view of the above, there is an urgent need to develop a no-snapback silicon controlled rectifier having a trigger voltage that can be further increased, facilitating the reduction in the number of series stages required by application of the multi-stage series connection to the high-voltage electro-static discharge protection, and thereby achieving the object of saving the layout area.

No-snapback silicon controlled rectifier and method for making the same

Shanghai Huali Microelectronics Corporation


A method and system for dynamic distributed data caching is presented. The method includes providing a cache community comprising at least one peer. Each peer has an associated first content portion indicating content to be cached by the respective peer. A client may be allowed to join the cache community. A peer list associated with the cache community is updated to include the client. The peer list indicates the peers in the cache community. A respective second content portion is associated with each peer based on the addition of the client.

As computers have grown increasingly important in today's society, the importance of the Internet has also increased. As increasing numbers of users access the Internet, the need for efficient use of bandwidth has also increased. The increasing numbers of requests handled by the Internet are increasing the delay experienced by a user between generating a request and receiving a response to the request because of bandwidth limitations.
One traditional solution to decreasing bandwidth usage and decreasing the delay experienced by the user has involved caching previously requested content at the user's computer for faster retrieval. A related traditional solution has involved caching previously requested content for multiple users at a single cache server. Another traditional solution has involved increasing the bandwidth of the network connection between the Internet, the user and the web servers handling the requests. However, traditional solutions have often failed as the number of requests continue to increase and overload single cache servers and because of the expense associated with maintaining large numbers of high speed connections to the Internet. In addition, the traditional solutions have not utilized the "always-on" nature of newer broadband connections such as digital subscriber line and cable modems.

Method and system for dynamic distributed data caching


A grease filter (1) for domestic extractor hoods comprises at least two walls (2, 3) placed face to face and having first through openings (4) made in them arranged in such a way as to cause sudden changes of direction in the fumes flowing through them. At least one of the walls (2, 3) includes a plurality of second openings (5) whose flow section is considerably narrower than that of the first openings (4). The first openings (4) and the second openings (5) combine to divide the total flow passing through the filter (1) into two component flows which are in turn divided into a first plurality of macroscopic flows (6) following a labyrinth path through the first openings (4) and a second plurality of microscopic flows (7) passing through the second openings (5).

The present invention relates to the field of cooking fume extractor hoods for domestic use. The invention relates, in particular, to a controlled flow grease filter for trapping and separating liquid and/or solid particles suspended in the air from fumes sucked in by the extractor hoods.
In order to trap the microscopic particles suspended in the cooking fumes carried by domestic extractor hoods, the hoods are normally fitted with filters. These hood filters may be broadly divided into two main types, according to their constructional design.
In a first type of filter, multi-layered materials such as paper, cellulose or fine-mesh netting are used to trap and hold the liquid droplets or solid particles transported by the flow of fumes flowing through the filter while the part of the fumes constituted by air is allowed to flow through the filter.
The second type of filter comprises labyrinth filters which work on the principle of sudden changes of direction of fume flow. The fumes flowing through the filter are forced to follow a complex path having specially designed twists and turns. The part of the fumes constituted by air easily follows the path and flows out to the other side of the filter, whilst the suspended liquid droplets and solid particles are unable to change their direction suddenly on account of their high inertia and remain trapped inside the filter.
In a prior Italian patent application N. RN2002U000020, the Applicant disclosed a technical solution relating to labyrinth filters for domestic extractor hoods.
That solution, although tested successfully, has one drawback—common to all types of labyrinth filters—and that is, that, in strictly fluid dynamic terms, labyrinth filters can be advantageously used in extractor hoods only if the flow sections are relatively wide. Narrower flow sections reduce the working flow rate of the processed flow and increase flow speed. The former reduces the amount of air processed per unit of time, the latter exponentially increases load losses and significantly increases the noise made by the hood in operation. On the other hand, wider flow sections to improve the fluid dynamic properties of the filter would lead to a lower particle retention efficiency.
The aim of this invention is to overcome the above mentioned typical shortcomings of labyrinth filters by reaching an effective compromise that permits the achievement of a high suspended particle retention efficiency accompanied by low energy load loss and low noise.

Controlled flow grease filter for domestic extractor hoods


Provided are a semiconductor package and a semiconductor package module including the same. The semiconductor package may include a plurality of semiconductor chips, a plurality of leads connected to pads of the semiconductor chips and externally exposed, wherein the plurality of leads may be classified into a plurality of pin groups, and the plurality of semiconductor chips may be classified into a plurality of chip groups, and the pads of the semiconductor chips of like chip groups may be connected to the leads of like pin groups.

1. Field
Example embodiments relate to a semiconductor package, a semiconductor package module including the semiconductor package, and methods of fabricating the same. More particularly, example embodiments relate to a semiconductor package including leads that can be classified into a plurality of groups and in which a plurality of semiconductor chips are stacked, and a semiconductor package module in which the semiconductor package is mounted.
2. Description of the Related Art
Semiconductor package technology is continuously being developed in order to increase the integration and operating speed of semiconductor packages, and also to reduce the size and thickness of the semiconductor packages. Semiconductor packages may be formed such that one or more semiconductor chips are attached to a lead frame. Pads may be formed on the semiconductor chips and leads may be wire-bonded and sealed with an encapsulant, e.g., as epoxy molding compound (EMC). A flash memory, for example, may use a thin small outline package (TSOP) type semiconductor package, which has a relatively small thickness. A flash memory may also have a multi chip package (MCP) type semiconductor package, in which two or more semiconductor chips may be stacked when large capacity may not be provided using a single semiconductor chip. However, in a semiconductor package in which a plurality of semiconductor chips are stacked, the whole semiconductor package may be judged as being defective if any of the semiconductor chips are defective. The pin arrangement of leads is common to all the chips, and thus non-defective semiconductor chips and defective semiconductor chips are connected together to common leads corresponding to predetermined pin numbers.
FIG. 1 is a side cross-sectional view of a prior art semiconductor package including only one chip group and one pin group. FIG. 2 is a plan view of an inner structure of the semiconductor package of FIG. 1. FIG. 3 is a plan view of the pin arrangement of the semiconductor package of FIG. 1 in the case of a NAND flash memory.
Referring to FIGS. 1, 2, and 3, a plurality of semiconductor chips 20 may be stacked on a lead frame 40. Pads 60 may be formed adjacent to two side edges of each of the semiconductor chips 20 and leads 50 may be bonded using wires 30 to the pads 60. The semiconductor chips 20 may be sealed with an encapsulant 10, e.g., epoxy molding compound (EMC). The lead frame 40 and leads 50 may be a single body.
The semiconductor package illustrated in FIGS. 1, 2, and 3 may be a NAND flash memory, in the form of a thin small outline package (TSOP) type package, or a multi chip package (MCP) type package having 48 pins. The semiconductor package may include 48 leads 50, and the pin arrangement of the leads 50 is as illustrated in FIG. 3. Hereinafter, 'leads' and 'pins' refer to an identical term in respect of the structure and function thereof. #1, #2, etc. denote the pin number of the leads. The functions of the pins are denoted next to the pin numbers, meaning the type of power or signal that is transmitted through corresponding pins, and I/O, NC, R/B, CE, Vcc, Vss, Wp, and so on are illustrated. A NAND flash memory, as illustrated in FIGS. 1, 2, and 3, may be operated using eight I/O pins and five control clocks. Examples of pins denoting five control clocks include CLE, ALE, CE (CE1 and CE2), WE, and RE.
For example, pin #29 is an I/O 0 pin, and is connected to all four semiconductor chips 20. The I/O 0 pin displays a program/erase status in a NAND flash memory. Even if just one semiconductor chip 20 positioned right above the lead frame 40 among the four semiconductor chips 20 of FIG. 1 is defective, the whole semiconductor package may malfunction. Because all the semiconductor chips 20 in the semiconductor package are connected to one I/O 0 pin, the defective semiconductor chip 20 may not be separated from the I/O 0 pin that is common to all the semiconductor chips 20.

Semiconductor package, semiconductor package module including the semiconductor package, and methods of fabricating the same


The application relates to a sprayable cooking composition having enhanced high heat performance. The cooking composition includes cottonseed oil, a crystal inhibitor, and a cookware release agent and does not polymerize at high cooking temperature, or exhibits reduced polymerization and/or browning at high cooking temperature.

Cooking spray products generally are comprised of vegetable oils. The vegetable oils may by fractionated or partially hydrogenated. Two of the more common vegetable oils to be used in cooking sprays are soybean oil and canola oil. However soybean and canola oils contain high levels of polyunsaturated fatty acids which make them susceptible to oxidation. Additionally, oils high in polyunsaturated fats have a tendency to polymerize at medium to high cooking temperatures, which results in polymerized film being deposited on skillets and pans.
Fractionated oils tend to have a lower rate of polymerization. Fractionated oils contain high levels of trans fatty acids and high levels of saturated fatty acids. However, trans fatty acids and saturated fatty acids are unhealthy. Additionally, while fractionated oils have a lower rate of polymerization, fractionated oils are frequently contaminated with hard fat fractions which causes clogging of the spray nozzle system. Sprayable cooking compositions that are low in trans fatty acids, non-hydrogenated, and suitable for use at high cooking temperatures are needed.

Sprayable cooking compositions for high temperature use


The invention relates to a method for the production of a.) aldehydes of formula (II): R1—CHO and b.) aldehydes of formula (III): R1—C(O)—R2 by reacting a.) primary alcohols (R1CH2—OH) or b.) secondary alcohols (R1—CH(OH)—R2) with cyclic phosphonic acid anhydrides in the presence of dialkyl-, diaryl- and/or alkyl-aryl sulphonic oxides at a temperature in the region of between −100 to +120° C., whereby R1 and/or R2 represent H, a substituted linear or branched C1-C12-alkyl radical, a substituted C3-C10 cycloalkyl-, alkenyl-, aryl- or heteroaryl radical. A cyclic phosphonic acid anhydride is used, preferably, as a 2,4,6-substituted 1,3,5,2,4,6-trioxatriphosphinane of formula (I), wherein R′ independently represents allyl, aryl or open-chained or branched C1-C12-alkyl-radicals. Optionally, the reaction can be carried out in the presence of a tertiary amine base NR53

Aldehydes and ketones are important and extremely versatile intermediates in organic synthesis. Both compound classes exhibit a high reactivity of the C,O double bond, which enables numerous carbonyl reactions. The significance in modern organic synthesis is restricted only by limitations in the availability of these compound classes. Standard processes for preparing aldehydes and ketones are oxidations of corresponding alcohols, for which numerous methods such as catalytic vapor phase dehydrogenation or direct oxidation with molecular oxygen find use. It is also possible to use reagents such as hypohalic acids, heavy metal compounds such as silver carbonate, lead oxide, lead acetate, chromium oxides, ruthenates or else dimethyl sulfoxide, for example.
In modern organic synthesis, the significance of chemo-, regio- and stereoselective reagents is increasing explosively. When, for example, the intention is to convert a specific alcohol functionality to an aldehyde in a complex molecule with numerous functional groups, numerous methods from those mentioned, for example catalytic vapor phase dehydrogenation and direct oxidation with molecular oxygen, can no longer be used for selectivity reasons. The use of hypohalic acids is also restricted, since undesired side reactions such as overoxidation, halogenations or esterifications likewise occur, accompanied by low yields in some cases. The oxidation of primary alcohols to aldehydes or secondary alcohols to ketones with heavy metal compounds is always associated with the toxicity of the oxidizing agents in addition to the occurrence of by-products and the overoxidation.
There has to date been a lack of a highly selective solution to the problem of converting primary and secondary alcohols to the corresponding aldehydes and ketones, which can also be employed in complex multi-functional molecules. Although the known reagents can accomplish the desired transformations, other moieties are often likewise influenced. In many cases, the drastic conditions required epimerize even far-removed stereocenters. Moreover, the method to be developed should be heavy metal-free. In addition, the transformation should be employable under very mild conditions and the removal of the conversion products of the reagent used should be very simple.
It would therefore be very desirable to have a process which can convert primary and secondary alcohols by oxidation to the corresponding aldehydes and ketones but at the same time has very mild reaction conditions and a simplified workup, and is additionally usable in economically utilizable processes. The known reagents do not solve this problem, as will be demonstrated using some examples: although DMSO in combination with acetic anhydride can accomplish the reactions mentioned, this process only has restricted possible uses, since low yields are obtained in most cases. By-products are often formed in significant amounts, in particular via a Pummerer rearrangement. The oxidations of primary alcohols to aldehydes with DMSO in combination with trifluoroacetic anhydride can lead to explosions and must therefore be carried out at low temperatures at which, though, many complex molecules and natural substances are often no longer sufficiently soluble. The oxidation of primary alcohols with DMSO and thionyl chloride or oxalyl chloride must likewise be accomplished at low temperatures. However, these reagents can no longer be used when the molecules to be oxidized contain functional groups which can react with thionyl chloride or oxalyl chloride. It is likewise possible to carry out the desired transformation to aldehydes with DCC. However, the dicyclohexylurea formed as a conversion product can often barely be removed from the product or only by increased purification complexity. The use of water-soluble DCC derivatives is usually characterized by their very high cost, the instability of the intermediates in the oxidation and reduced effectiveness of the oxidizing agent.

Method for the production of aldehydes and ketones by oxidizing primary and secondary alcohols with alkylphosphonic acid anhydrides


An image forming apparatus for producing completed copies includes a main body. An image forming device is provided in the main body for forming images on paper to produce the completed copies. A tray is also provided in the main body for receiving and stacking the completed copies produced by the image forming device. A sheet transport path transports the completed copies from the image forming device to the tray. In addition, a support mechanism movably supports the tray from a first position inside of said main body where the completed copies are received and stacked thereon to a second position outside of the main body where the completed copies can be manually removed therefrom.

Recording systems as noted above include indirect electrostatic copying machines utilizing an electrophotographic process, and optical printers such as LED printers. In this type of recording system, generally, the toner transferred to recording paper in the electrophotographic process is maintained in an unfixed condition until the recording paper reaches a fixing device. In order to avoid the necessity to provide a special means for toner adhesion, the recording paper is transported to the fixing device with the recorded side facing up. The recording paper is discharged in the same face-up state after the fixing process. The recording paper thus discharged is stacked with new sheets successively overlying preceding sheets.
According to this arrangement, however, when recording information spanning a plurality of pages is recorded on separate sheets of recording paper, new sheets are successively placed on preceding sheets with their recorded sides facing up. With a machine constructed to start recording the first page of information, the order of page numbering becomes reverse of the proper order of recording information. This requires a manual operation after a recording operation for rearranging the sheets to put the pages in an ascending order from top to bottom.
This rearranging operation is the more troublesome the greater the number of pages of recorded information is. There are recording systems having means for dispensing with the manual rearrangement. One such system includes a reversing device for discharging recording paper face down after a recording operation, thus in the order of page numbering. There is also a type of printer which includes a memory for storing an entire piece of input recording information spanning a plurality of pages, and starts recording the part of the information corresponding to the final page. With this type of printer, therefore, recording paper is discharged face down already in the order of page numbering.
On the other hand, various functions are added to the foregoing recording systems besides the page arranging function in order to promote value added performance.
One of such additional functions is a composite recording function. This function, for example, allows a copying machine to record images of different documents on the same face of a single sheet of recording paper. Further, with this function, a recording system referred to as a digital/analog copier which has both a digital function for recording input recording information dot by dot and an analog function for copying documents can add character or other information to the recording paper on which the image of a document has been formed. To fulfill the composite recording function, a known recording system comprises a paper feeding device for supplying recording paper to a recording section, an image forming device for forming images on the recording paper, a discharge device for discharging the recording paper after the image formation, an intermediate tray for storing plural sheets of recording paper, a branched transport device for feeding the sheets of recording paper after the image formation to the intermediate tray and stacking them face down thereon, and a paper refeeding device for supplying the recording paper from the intermediate tray to the recording section. These paper feeding device, image forming device, branched transport device, paper refeeding device and paper discharge device are operable in response to a composite recording start signal and a recording resume signal. That is, with the composite recording start signal, the recording paper is supplied to the recording section for image formation thereon. Thereafter the recording paper is transported to the intermediate tray. Then, with the recording resume signal, the recording paper is fed from the intermediate tray to the recording section for a further image formation, the paper being discharged subsequent thereto.
Another added function is a duplex recording function. This function, for example, allows a copying machine to record images of different documents on opposite faces of a single sheet of recording paper. Further, with this function, a digital/analog copier having both the digital function for recording input recording information dot by dot and the analog function for copying documents can add character or other information to the reverse side of the recording paper on which the image of a document has been formed. A construction for fulfilling this function is substantially the same as the construction for the composite recording function, and its description is not repeated.
The above known systems with the page arranging function have the following problems.
In the system including the paper reversing device, this device occupies a large space for turning over the recording paper. As a result, the system must have a large overall construction, particularly if the reversing device is provided in addition to an existing paper face-up discharge device. With a printer which simply records input information, compactness may be possible to some extent with an arrangement for stacking recording paper discharged after being reversed by the reversing device on a tray or the like mounted on a top surface of the printer. However, with a copying machine or a digital-analog copier, such a discharge arrangement cannot be employed since a document table is provided on the top surface of the machine. It is especially difficult to provide such a machine with the paper reversing device without the problem relating to space.
Regarding the recording system including a memory for storing information spanning a plurality of pages to start printing the final page, the number of pages of recording information constituting one document is variable and sometimes exceeds one hundred. This means that, in order to realize the page arrangement, a large capacity memory is required to meet the rare recording conditions in which information is recorded on a great number of pages. Such a construction only impairs cost performance and is not practicable. Moreover, such a construction cannot be applied to an ordinary copying machine.
It is also desired for the recording system having the composite and/or duplex recording functions to output recorded sheets in page arrangement. However, a construction such as the foregoing reversing device simply added to realize the page arranging function is futile since it not only complicates the system construction but consumes a very long time in recording information on a large number of sheets.

Image forming apparatus having a movable sheet receiving tray


A child station (3) of a communication system performs communication while synchronizing the reference time of a parent station (2) with the local time (RT) of the child station (3). When the child station (3) is switched from a normal mode to a power saving mode in accordance with a mode change instruction from the parent station (2), correction is performed for one or both of a stop period in which the apparatus of the child station (3) is stopped and a non-stop period in the power saving mode using an error (Δt) generated during the time between the reference time of the parent station (2) and the local time (RT) of the child station (3). This makes it possible to synchronize the parent station (2) with the child station (3) and reliably and efficiently transfer a control frame (CF) from the parent station (2) to the child station (3).

A PON (Passive Optical Network) system is a conventional communication system formed from a parent station and child stations. The PON system performs communication by point-to-multipoint using an OLT (Optical Line Terminal) installed in a station building as a parent station and an ONU (Optical Network Unit) installed in each user home as a child station.
FIG. 1 shows the arrangement of a PON system 1. Referring to FIG. 1, the PON system 1 includes an OLT 2 installed in a station building, m ONUs 3 (3−1, 3−2, . . . , 3−m each installed in a user home, optical fibers 4 that connect the m ONUs 3 (3−1, 3−2, . . . , 3−m) to 1:m, and an optical splitter 5. Note that an external network 6 is connected to the OLT 2. The section where the ONUs 3 and the OLT 2 are connected by the optical fibers 4 and the optical splitter 5 will be referred to as a PON section 7.
In the PON system 1, signals transmitted from the plurality of ONUs 3 are bundled by the optical splitter 5 and reach the OLT 2 in this state. Hence, the PON system 1 defines the signal transmission timing of each ONU 3 not to cause confliction between the signals from the ONUs 3 (for example, see non-patent literatures 1 and 2).
The OLT 2 periodically transmits a reference time to each ONU 3 in accordance with the definition and notifies each ONU 3 of time at which it is permitted to transmit a signal. Each ONU 3 sets the local time of its own to the reference time received from the OLT 2, and when the local time has reached the designated time, transmits the signal and communicates with the OLT 2.
In the PON system 1, the ONU 3 is installed in each user home. For this reason, the power consumption of all ONUs 3 makes up a large proportion of the power consumption of the entire network, and the ONUs 3 are required to save power.
The ONU 3 uses, for example, a Cyclic Sleep method as the power saving method (see, for example, non-patent literature 3). In the Cyclic Sleep method, the ONU 3 has two modes, that is, a power saving mode and a normal mode. In the power saving mode, the ONU 3 performs Cyclic Sleep. In the normal mode, Cyclic Sleep is not performed.
In the Cyclic Sleep method, the ONU 3 periodically repeats a Sleep state and an Aware state in the power saving mode. The Sleep state indicates a state in which the apparatus is partially or wholly stopped to suppress power use. The Aware state indicates a state in which the apparatus is activated not to suppress power use. A period during which the ONU 3 is in the Sleep state will be referred to as a Sleep period, and a period during which the ONU 3 is in the Aware state will be referred to as an Aware period hereinafter. The time from the start of the Sleep period to the end of the Aware period will be referred to as one cycle. Signals transmitted/received between the OLT 2 and the ONUs 3 will be referred to as frames for distinction from internal signals of the apparatus. The frames include user frames and control frames. "User frame" is a general term for frames exchanged between the external network 6 and a home network, and "control frame" indicates frames (including a Sleep frame, Sleep_Ack frame, Aware frame, and Aware_Ack frame to be described later) other than the user frames.
FIG. 2 shows the communication process of the Cyclic Sleep method. In the Cyclic Sleep method, the OLT 2 instructs the ONU 3 to shift from the normal mode to the power saving mode or return from the power saving mode to the normal mode.
In actuality, referring to FIG. 2, the OLT 2 first decides, based on traffic and the like, to set a specific ONU 3 in the power saving mode, and transmits a control frame (in this case, Sleep frame) for instructing it to the ONU 3 at time of step ST1. Upon receiving the Sleep frame, the ONU 3 returns a control frame (in this case, Sleep_Ack frame) to the OLT 2 at time of step ST2 to notify it that the ONU 3 has acknowledged the shift to the power saving mode.
After transmitting the Sleep_Ack frame to the OLT 2, the ONU 3 is set in the Sleep state during a preset Sleep period (to be referred to as "T_sleep" hereinafter). When the Sleep period has ended, the ONU 3 is set in the Aware state during a preset Aware period (to be referred to as "T_aware" hereinafter). If no instruction is received from the OLT 2 until the end of the Aware period, the ONU 3 is set in the Sleep state during T_sleep again, and periodically repeats this operation from then on.
In the Cyclic Sleep method, to return the ONU 3 from the power saving mode to the normal mode, the OLT 2 sends a control frame (in this case, Aware frame) for instructing return from the power saving mode to the ONU 3 at time of step ST3. Upon receiving the Aware frame, the ONU 3 returns from the power saving mode to the normal mode, and transmits a control frame (in this case, Aware_Ack frame) to the OLT 2 at time of step ST4 to notify it of the return. From this point, the ONU 3 remains in the normal mode until a control frame (Sleep frame) is received from the OLT 2 again.
Note that in the Cyclic Sleep method, the time at which the Sleep period starts in the first cycle will be referred to as a power saving mode start time, and the OLT 2 and the ONU 3 are synchronized for the power saving mode start time.
FIG. 3 shows detailed examples of the arrangements of the OLT 2 and the ONU 3 that implement the Cyclic Sleep method. The OLT 2 includes a parent station communication unit 21, and (m) parent station power control units 22−1 to 22−m as many as the ONUs connected to the OLT 2.
The OLT 2 implements a protocol defined by non-patent literature 1 or 2 in the parent station communication unit 21. The OLT 2 maintains connection to each ONU 3 while periodically transmitting a control frame from the parent station communication unit 21 to the ONU 3 via the PON section 7 to notify them of the reference time, and transmits a user frame input from the external network 6 to the ONU 3 via the parent station communication unit 21 and the PON section 7. The OLT 2 also transmits a user frame, which is input from a home network 8 to the ONU 3 and transmitted from the ONU 3 via the PON section 7, to the external network 6 via the parent station communication unit 21.
The m parent station power control units 22 (22−1 to 22−m) of the OLT 2 correspond to the ONUs 3 connected to the OLT 2, and control whether the ONUs 3 should be in the power saving mode or the normal mode. In the OLT 2, each parent station power control unit 22 receives traffic Q1 of the corresponding ONU 3 from the parent station communication unit 21. The parent station power control unit 22 decides, based on the traffic Q1, whether to set the ONU 3 in the power saving mode. Each parent station power control unit 22 of the OLT 2 instructs the parent station communication unit 21 to transmit a control frame CF by a control signal C1. The parent station communication unit 21 generates the control frame CF such as the above-described Sleep frame or Aware frame in accordance with the transmission instruction and transmits the control frame CF to the ONU 3.
On the other hand, the ONU 3 includes a child station communication unit 31, a child station power control unit 32, and a child station period measurement unit 33. The ONU 3 implements the same communication protocol as that in the OLT 2 in the child station communication unit 31. The ONU 3 maintains connection to the OLT 2 while establishing time synchronization between the local time of the ONU 3 and the reference time of the OLT 2 based on the reference time transmitted from the OLT 2.
The ONU 3 transmits a user frame UF, which is input from the home network 8, from the child station communication unit 31 to the OLT 2. In addition, the ONU 3 transmits the user frame UF, which is input from the OLT 2 via the PON section 7, from the child station communication unit 31 to the home network 8. When the ONU 3 shifts to the Sleep state or the Aware state, the child station communication unit 31 of the ONU 3 controls stop or activation of the communication function by a stop/activation signal SPST input from the child station power control unit 32.
The child station power control unit 32 of the ONU 3 receives the control frame CF from the OLT 2 via the child station communication unit 31, and manages whether the ONU 3 should be in the power saving mode or the normal mode. More specifically, upon receiving the control frame (Sleep frame) CF from the OLT 2, the child station communication unit 31 of the ONU 3 notifies the child station power control unit 32 of the contents of the control frame (Sleep frame) CF by a control signal C2. As a result, the child station power control unit 32 of the ONU 3 shifts from the normal mode to the power saving mode based on the control signal C2 and repeats the Sleep state and the Aware state in a predetermined period. The child station period measurement unit 33 measures the Sleep period and the Aware period.
In the ONU 3, the child station power control unit 32 outputs a set signal SET and a reset signal RSET to the child station period measurement unit 33, and the child station period measurement unit 33 outputs a Sleep state signal SLM and an Aware state signal AWM to the child station power control unit 32. The set signal SET causes the child station period measurement unit 33 to start measuring the Sleep period and the Aware period. The reset signal RSET causes the child station period measurement unit 33 to stop the measurement. The Sleep state signal SLM is output in the Sleep period. The Aware state signal AWM is output in the Aware period.
In actuality, when the ONU 3 shifts from the normal mode to the power saving mode, the child station power control unit 32 outputs the set signal SET to the child station period measurement unit 33, and the child station period measurement unit 33 starts measuring the Sleep period and the Aware period. The ONU 3 causes the child station power control unit 32 to determine, based on the Sleep state signal SLM and the Aware state signal AWM from the child station period measurement unit 33, whether the ONU 3 is in the Sleep state or the Aware state and output the stop/activation signal SPST to the child station communication unit 31 to instruct stop/activation of the communication function.
In the above-described Cyclic Sleep method, however, the ONU 3 in the Sleep state stops the receiving function of the child station communication unit 31 and cannot receive the control frame (Sleep frame or Aware frame) CF from the OLT 2. For this reason, to return the ONU 3 from the power saving mode to the normal mode, the OLT 2 needs to transmit the control frame (Aware frame) CF of return instruction when the ONU 3 is in the Aware state.
To implement this, the OLT 2 needs to measure the Sleep period and the Aware period and grasp whether the ONU 3 is in the Sleep state or the Aware state. However, because of the clock deviation between the OLT 2 and the ONU 3, an error (Δt) occurs in the measurement of the Sleep period and the Aware period in the Sleep state in which clock synchronization cannot be established. Note that when the clock deviation of the apparatus is 100 ppm, the error (Δt) is about 1 μsec in a 10-msec Sleep period.
Even if small relative to the Sleep period or the Aware period, the error (Δt) accumulates in every cycle and increases to x×Δt in x cycles. For this reason, as shown in FIG. 4, after the cycle has repeated, a case may occur in which the OLT 2 is in the Aware period, whereas the ONU 3 is in the Sleep period. If the OLT 2 transmits the control frame (Aware frame) CF at this timing, the ONU 3 cannot receive it. Hence, the return from the power saving mode to the normal mode is impossible.
To avoid such a situation, the OLT 2 may continuously transmit the control frame (Aware frame) CF of return instruction at an interval much shorter than the Aware period. However, this method not only lowers the band utilization efficiency but also increases the load on the OLT 2 and thus increases the power consumption. Such a measure is necessary because the error (Δt) between the OLT 2 and the ONU 3 is not taken into consideration when measuring the Sleep period and the Aware period.
If the error (Δt) is too large to neglect relative to the Sleep period or the Aware period, the error (Δt) occurs between the OLT 2 and the ONU 3 during the Aware period and the Sleep period in the first cycle, and the same problem as described above arises. This is also because the error (Δt) is not taken into consideration when measuring the Sleep period and the Aware period.

Communication system, communication method, and child station of communication system

NIPPON TELEGRAPH AND TELEPHONE CORPORATION


A water soluble mask is formed on a substrate. Thereafter, a coating (e.g., low-E coating) is formed on the substrate in at least one select area over the mask and in at least one area where the mask is not provided. After the coating has been formed, water is used to remove the mask and a portion of the coating formed thereon in order to form a partially coated substrate. The technique may be used in applications such as in the making of vehicle windshields, or the like.

Vehicle windshields typically include first and second glass substrates that are laminated to one another via at least a polymer interlayer (e.g., PVB). A low emissivity (low-E) coating is often formed on an interior surface of one of the substrates so that the coating is provided between the substrates and adjacent the polymer interlayer in the final windshield product. A low-E coating typically includes at least one infrared (IR) reflecting layer such as Ag, NiCr, or Au, that is provided between at least a pair of dielectric layers. Example dielectric layers include silicon nitride, tin oxide, zinc oxide, etc. Example low-E coatings are disclosed in U.S. Pat. Nos. 3,682,528; 4,898,790; 4,965,121; 5,514,476; 5,563,734; 5,800,933; 5,837,108; 5,557,462; 5,935,702; and 6,014,872; and U.S. Ser. No. 09/794,224 (same as WO 02/04375), the disclosures of which are all hereby incorporated herein by reference. Other example low-E coatings are disclosed in WO 01/66483 and WO 01/66482. Such low-E coatings are provided so that the windshield can block (i.e., reflect and/or absorb) significant amounts of IR radiation thereby preventing the same from reaching the vehicle interior.
However, it is often preferred that some areas of the coated glass substrate not be provided with the low-E coating. For example, it may be desired that the coating (e.g., low-E coating) not be provided in toll area(s) of the windshield, rain sensor area(s) of the windshield, and/or adjacent edge(s) of the windshield. Regarding toll areas of the windshield (e.g., used for toll sensors and/or garage door openers), the IR reflecting layer(s) of the low-E coating may tend to interfere with electromagnetic wave transmissions (e.g., RF) associated therewith thereby rendering the coating undesirable in such areas. The same applies to rain sensor area(s). Low-E coatings are also sometimes not desired immediately adjacent edges of a windshield in order to avoid corrosion. Thus, it is known to remove the low-E coating from select area(s) (e.g., toll window area, rain sensor area, and/or edge area) of the coated substrate after the coating has been formed, but prior to lamination.
Low-E coatings are typically removed from such area(s) of a glass substrate by using a grinding wheel, sandblasting, or the like. Unfortunately, the use of a grinding wheel for removing low-E coating portions from a glass substrate can lead to scratching of the underlying substrate. This is undesirable; especially in viewing areas of a windshield. Cycle time may also be lost if many area(s) of the coating have to be deleted.
U.S. Pat. No. 5,713,986 discloses another technique for removing a low-E coating from select area(s) of a glass sheet. In the '986 patent, a resist is printed on a select area of a glass substrate prior to sputtering. After the resist has been formed and dried, a low-E coating is sputtered onto the substrate including in the select area over the resist. After formation of the coating, the resist along with the coating portion formed thereon is removed thereby deleting/removing the coating from the select area of the substrate. The result is a substrate that is coated with the low-E coating, but where the coating has been removed from the substrate in only the select area. In order to remove the resist (and the coating portion thereon), the '986 patent states that the coated substrate is soaked in hot water, and thereafter requires that hot water under high pressure at a temperature of at least 77 degrees C. (more preferably at least 85 degrees C.) is sprayed onto the substrate in order to remove the resist and the coating portion thereon.
Unfortunately, the technique of the '986 patent is undesirable because (a) it requires water at a very high temperature of at least 77 degrees C. to remove the resist, and/or (b) the materials used for the resist are collectively undesirable. For example, the high temperatures needed for removal are not desired, as they increase production costs and/or burdens.
In view of the above, it will be appreciated that there exists a need in the art for an improved technique for removing a coating portion from select area(s) of a coated substrate (e.g., in the manufacture of a vehicle windshield).

Method of making vehicle windshield using coating mask

Centre Luxembourgeois de Recherches pour le Verre et al Ceramique S.A. (C.R.V.C.)


A Z-shaped attachment element for use in building construction is disclosed. The Z-shaped attachment element is made from a single piece of sheet metal that is first cut and then bent to form the Z-shaped cross-sectional profile. The Z-shaped attachment element comprises: an elongated upper flange; an elongated lower flange, wherein the upper and lower flanges are spaced apart and substantially parallel to each other; an elongated middle web section between, and connected to, the upper and lower flanges along respective upper and lower lengthwise bends (wherein the middle web section is diagonal in relation to the position of the upper and lower flanges, thereby defining a generally Z-shaped cross-sectional profile); and a plurality of notches formed along the lower lengthwise bend and into the lower flange and the adjoining middle web section, but not into the upper bend or the upper flange, of the Z-shaped sheet metal attachment element.

In the building construction industry, the construction of fire-rated wall assemblies within a building is an important construction detail that, if properly and compliantly done, promotes life safety (namely, by preventing and/or by reducing the spread of fire and smoke in the event of a building fire).
Nowadays, there are two primary methods used for sealing linear junctions (e.g., head-of-wall joints and expansion joints) against the spread of fire and smoke; namely, by (1) applying a firestop intumescent sealant (in the form of either a caulk, tape, or spray) along and into the linear joint, or (2) installing a specialty track (and/or other suitable specialty framing member) that has had a pre-applied intumescent tape appropriately placed on the track/framing member (such that the intumescent tape seals the linear construction joint). These two methods are widely used and both have been tested and certified by Underwriter Laboratories, Inc. ("UL" is an independent worldwide testing and regulatory compliance certification organization) as being compliant with certain specified fire and hose stream UL test standards.
For example, UL has tested and certified various building construction "joint systems" in accordance with their testing standards set forth in "UL 2079 Tests for Fire Resistance of Building Joint Systems, fifth edition (Aug. 26, 2015)." These enhanced UL fire test standards apply to a large number of building construction joint systems (and related wall assemblies) of various materials and construction. UL's joint system fire tests evaluate the length of time that a specified joint system will contain a fire during a predetermined/controlled exposure to fire. Consequently, UL's joint system fire tests evaluate the joint system's resistance to heat and, in some instances, to a hose stream, while carrying an applied load (if the assembly is load bearing). UL's joint system fire tests may, in some instances, include an air leakage test to determine the rate of air leakage through joint systems resulting from a specified air pressure difference applied across the surface of the joint system.
In the building construction industry, metal framing assemblies are commonly used to construct commercial and residential buildings. Metal framing assemblies are generally constructed from a plurality of metal framing members including studs, joists, trusses, and other metal posts and beams (e.g., I-beams) formed from sheet metal (and frequently fabricated to have the same general cross-sectional dimensions as standard wooden members used for similar purposes). Metal framing members are typically constructed by either brake-pressing or roll-forming (with both methods being referred to as "cold-formed" processing) 12-to-24-gauge galvanized sheet steel. Although many cross-sectional shapes are available, the primary shapes used in building construction are C-shaped studs and U-shaped tracks. For example, most wall assemblies are constructed from U-shaped tracks fastened to the floor (footer) and ceiling (header) with a plurality of C-shaped studs laterally spaced apart, and vertically positioned between, the opposing header and footer tracks. The sealing of perimeter and head-of-wall linear joints is an important aspect of building construction because a robust and effective seal can impede and/or prevent the spread of fire and smoke.
Although some progress has been made in recent years, there is still a need in the art for new and improved building construction products that better promote life safety—including innovative building construction products that facilitate the construction of head-of-wall assemblies, which, in turn, better seal linear construction joints (for purposes of impeding the transmission of fire and smoke in the event of a building fire, and/or impending the transmission of sound from one room to another). In particular, there is a need in the art for new and improved devices and methods that facilitate the attachment of a header track to an overhead beam that as has been sprayed and encrusted with a fire-proofing and/or insulation material. The present invention fulfills these needs and provides for further related advantages.

Z-shaped attachment element for building construction


A dual-mode retractor for an automotive seat belt webbing is configured to switch between a first mode and a second mode, the first mode being one of an ELR mode and an ALR mode, and the second mode being the other one of the ELR mode and the ALR mode. The retractor switches between the first mode and the second mode via a relative movement between a first part and a second part of the retractor. The magnetic field of a permanent magnet mounted on the first part is picked up by a Hall effect sensor. An interrupter plate is mounted on the second part in a position relative to the magnet, in which the interrupter plate, in which the interrupter plate exposes the HED to the original magnetic field in the first mode and to a modified magnetic field in the second mode.

Motor vehicle seat belt retractors are usually one of three types, ALR, ELR, or dual-mode. An ALR includes a self-locking mechanism operating like a ratchet while a seat belt tongue is engaged with a seat belt buckle. The seat belt webbing is automatically tightened, while the ALR prevents extraction of the available belt webbing. The ALR racheting operation is cancelled when the webbing is fully retracted. An ELR includes a locking mechanism that is activated by vehicle acceleration (vehicle sensitive), webbing acceleration (webbing sensitive), or other crash sensing means to block webbing extension. Absent an activation of the ALR, seat belt webbing can be pulled out to lengthen the available seat belt webbing. Both an ALR and an ELR are configured to restrain a passenger during a frontal impact or vehicle rollover. A dual-mode retractor combines an ELR and an ALR, and a vehicle occupant chooses the desired mode. Typically, a dual-mode retractor is switched to the ALR mode by completely or nearly completely pulling out the seat belt webbing. The ELR can be converted to an ALR at the option of a vehicle occupant. While the ELR mode provides a comfortable adjustment for an occupant seated on a vehicle seat, infant carriers may be more safely secured in the ALR mode. An ALR has the advantage that is very easily used with child restraint systems, since the belt can be fastened and cinched down to secure the child restraint. However, an ELR is more acceptable for ordinary use since it provides enhanced comfort and convenience for the vehicle occupant. Dual-mode systems accommodate use with both child restraint systems and normal operation.
In a safety system that comprises at least one further restraint device, such as an airbag or a load limiter for the seat belt webbing, the currently selected mode of a dual-mode retractor constitutes a valuable piece of information for the operation of the additional restraint device. For example, it is generally not preferred to activate a frontal impact airbag for a seating position being used for securing a child restraint device.
Accordingly, some vehicle manufacturers are looking to verify the currently selected mode, i.e. ALR or ELR, so they can use this information to provide as an input to an electronic control unit (ECU) for controlling certain restraint system functions. Some current retractors use microswitches or simple contact switches as part of a detection circuit to comply with the seat belt use indicator requirement in FMVSS 408. These are simple switches and may not provide the proper information for use in a restraint system control algorithm included in an ECU.

Mode detection switch assembly for self-locking dual-mode seat belt retractor


The invention relates to a process for the preparation of halogenomethylcyclopropanes.

Halogenomethylcyclopropanes are important intermediates for the preparation of pharmaceuticals (see, for example, British Patent Specification 1 136 214, U.S. Pat. No. 3,433,791 and EP-OS (European Published Specification) 102 833). As is usual in the preparation of pharmaceuticals, the purity for the intermediates required for this purpose should be as high as possible.
It is known to prepare halogenomethylcyclopropanes by reacting the corresponding alcohols with phosphorus trihalides. In accordance with Eur. J. Med. Chem.-Chim. Therap. 15, 571 (1980), however, a reaction temperature of -10.degree. C. leads to over 70% undesired halogenocyclobutane. Even at temperatures of -65 and -80.degree. C., which are difficult to control from a technical point of view, the undesired halogenocyclobutane still amounts to 8.0 and 4.3%, respectively.
In accordance with a different process, halogenomethylcyclopropanes are prepared by reacting the corresponding alcohols with methanesulphonyl halides in the presence of trialkylamines. This process, however, requires complicated dosing and temperature control (see EP-OS (European Published Specification) 565 826), if moderately pure products are to be obtained. To do this on an industrial scale requires complex measuring and control techniques and the reaction needs to be carried out extremely carefully.
Halogenoalkyls can also be prepared from hydroxyalkyls by reacting these with arylphosphorus halides (see EP-OS (European Published Specification) 251 246), for which purpose triarylphosphorus dihalides are generally employed, from which arylphosphorus tetrahalides are prepared in situ with elemental halogen. This process has not been applied to the conversion of hydroxymethylcyclopropanes into halogenomethylcyclcopropanes. Moreover, triarylphosphorus dihalides are not readily accessible.
In the process which has been the most advantageous to date, hydroxymethyl cyclopropane is added to a mixture of hexachloroacetone and triphenylphosphine, obtaining apparently pure chloromethylcyclopropane in yields of 80 to 90% (see J. Org. Chem. 49, 431 (1984)). The same reference describes the preparation of bromomethylcyclopropane by treating a mixture of hydroxymethylcyclopropane, triphenylphosphine and dimethylformamide with elemental bromine. At a reaction temperature of -10.degree. C., the product is said to be free from linear alkyl bromides and bromocyclobutane and can be obtained in a yield of 72%. However, even at room temperature, linear bromobutene is indicated as the main product. Reproduction at -10.degree. C. has revealed that the bromomethylcyclopropane obtained contains 0.6% by weight of linear impurities (see the present Comparison Example 1). In accordance with the reference, a very small excess of bromine is employed (98.9 mmol of bromine per 97.1 mmol of hydroxymethylcyclopropane).
The disadvantages of this process are the purity of the halogenomethylcyclopropane obtained, which is still unsatisfactory, the accessibility and manageability of hexachloroacetate, which are a problem, and the fact that the preparation processes for chloro- and bromomethylcyclopropanes differ. A particular problem is the contamination of the halogenomethylcyclopropanes obtained with linear compounds, in particular 1-halogeno-3-butenes, since the physical properties of linear halogenobutenes are virtually no different to those of the corresponding halogenomethylcyclopropanes. This is why the undesired linear compounds cannot be separated from the desired halogenomethylcyclopropanes by customary methods, for example by distillation.

Process for the production of halogen methyl cyclopropanes and highly pure halogen methyl cyclopropanes


A lighting device mounted within a jewelry setting which is directed at a facet of a gemstone to increase the brilliance and brightness of the gemstone. The lighting means is a low dispersion, focused beam of light which is directed at a facet of a gemstone so that the gemstone captures the light. In the preferred embodiment, the lighting source is radioluminescent or electroluminescent and uses various focusing means to focus the light from the lighting means. Fiber optic material may be used to direct light at the gemstone. The fiber optic material may contain dyes which absorb ambient light and cause the light to be directed in desired wave lengths at the gemstone. The fiber optic material may absorb light from the lighting means, as well as ambient light, to provide additional illumination in relatively high ambient light situations.

The present invention pertains to jewelry in general, and is specifically directed to lighting means mounted in a jewelry setting which is used to light a gemstone mounted within the setting, to increase the brightness and brilliance of the gemstone.
Gemstones are commonly mounted to jewelry settings. Precious and semi-precious stones are mounted within settings of various materials, which are usually precious and semi-precious metals. Common examples of such jewelry are rings, bracelets, necklaces, pendants, and earrings. Brightness and brilliance are desirable characteristics and qualities which are associated with gemstones. It is highly desirable for gemstones to reflect and refract light to increase their beauty. Often, the value of a gemstone is associated with its ability to reflect and refract light clearly. Gemstones do not generate light, and the light must be provided from an external source.
The brightness and brilliance of a gemstone is affected by the cut and quality of the stone, the type of stone, as well as the available light in the environment in which the stone is worn. Unless a lighting means is provided for and directed toward the gemstone, the gemstone will reflect and refract only the light which is in the room or other environment. The brilliance and brightness of the stone will be increased if the light is directed from the setting, rather than the environment.


An electrolytic copper plating solution is provided which has an excellent via filling ability without using formaldehyde, which is harmful to the environment. An electrolytic copper plating solution which contains compounds which have an —X—S—Y— structure wherein X and Y are individually atoms selected from a group comprising hydrogen, carbon, sulfur, nitrogen, and oxygen atoms and X and Y can be the same only when they are carbon atoms and specific nitrogen-containing compounds. Good filled vias can be made without causing a worsening of the exterior appearance of the plating by using this electrolytic copper plating solution.

In recent years, a plating method known as "through-hole plating" or "via filling plating" has been used in basic production of printed circuit boards used in electronic devices such as personal computers. Electrolytic copper plating is expected to have application to through-hole and via plating, since the rate of deposition of the plating film is rapid, 10-50 μm/hr. However, if the copper is deposited on the whole inner via surfaces, the rate of deposition near the bottom of the vias must be more rapid than the rate of deposition in their opening parts in order for the inside of the vias to be filled with copper without leaving voids. If the rate of deposition near the bottoms is the same as or slower than the rate of deposition in the opening parts, either the vias will not be filled, or the opening parts will plug up before the copper plating filling inside the vias is completed, voids will be left inside them, and in either case they will not be suitable for use. Moreover, in through-hole plating, there is a requirement that the covering ability of the plating in the through holes, known as "throwing power," be good.
Up to now, electrolytic copper plating baths containing specific compounds which contain sulfur atoms have been used to accelerate the deposition rates near the bottoms of vias and on the walls of through-holes; as for the electrolysis conditions, direct-current electrolysis using soluble anodes, such as phosphorus-containing copper anodes, has generally been used. With this method, however, although there is a good via filling performance immediately after the bath is made, the electrolytic copper plating bath becomes unstable over time and problems are produced after a certain period of time has elapsed after the formation of the bath, including the facts that particle lumps are produced in the formation of the electrolytic copper plating layer, the external appearance of the plating becomes worse, the filling of the via becomes unstable, etc. Furthermore, the reliability of the resistance to thermal shock and the throwing power are reduced in through-hole plating.
In order to solve these problems, an electrolytic copper plating solution which contains specific compounds containing sulfur atoms and thiol reactive compounds is disclosed in Japanese Unexamined Patent Application No. 2002-249891. As the thiol reactive compounds, aliphatic and alicyclic compounds, carboxylic acids, peroxo acids of aromatic or heterocyclic compounds, aldehydes and ketones, and hydrogen peroxide are disclosed, and it is stated in the working examples that formaldehyde improves the filling ability. In recent years, however, considering the effects of formaldehyde on the environment and the human body, the fact that its flash point is low (66° C.), etc., efforts have been made to find outer compounds with via filling ability improving performances to substitute for formaldehyde. Moreover, although an electrolytic copper plating solution is disclosed in Japanese Unexamined Patent Application No. 2011-207878 which contains accelerants (glossifying agents) containing sulfur atoms and reaction products of nitrogen-containing compounds and epoxide compounds, there is no mention in this reference to the problem of degradation products due to changes over time in the accelerants containing sulfur atoms.

Electrolytic copper plating solution and method of electrolytic copper plating


A disposable, loop-form surgical curette blade formed as an integral unit from a single elongated blank so as to have the loop-form cutter formed by one sharpened end portion of the blank and a shank formed by the balance of the blank and extending from the loop-form cutter. A method of manufacturing such a blade is also disclosed.

This invention relates to curettes of the type used for such purposes as removal of cancerous and non-cancerous skin growths.
The technique of curettage is routinely used by dermatologists to separate diseased skin or skin lesions from normal skin. The instrument used to perform curettage on the skin is termed a dermal curette. Commonly used dermal curettes include, among others, the Fox curette and the Piffard curette, both of which are manual stainless steel instruments having a loop-form cutter or blade and an elongated handle for manipulation of the blade by the user. These are regarded as permanent, reusable curettes, in that because of their expense, they would not be economical for single-use application.
Disposable curettes are also available and are generally suitable for their intended purpose. However, they often may have a different feel to the user, and therefore may require practice before the user who is accustomed to a reusable curette, such as the Fox or the Piffard, can become proficient in their use. The reason for this is that normal tissue has a different feel under the cutting action of the curette than lesional tissue. The user who is more sensitive to this difference in feel will also be more proficient at removal of lesions, since the sensitivity to feel will allow more complete removal of lesional tissue with less incursion into normal tissue.
This sort of sensitivity comes with practice and experience, and can be disrupted by differences in design, materials and structure, as between different curettes. Accordingly, practitioners would normally prefer to confine their use of curettes to a single type. The need to choose a single type of curette could, however be obviated by a disposable curette having the same feel, heft, weight and balance as a reusable curette.
Of course, the disposability of a curette is entirely a matter of economics, and any curette may be regarded as disposable if the user is unconcerned about its cost. As a practical matter, however, many physicians, including dermatologists for example, use curettes routinely and therefore cannot treat reusable curettes as disposables, nor can they escape the cost trade-off between presently available reusable and disposable curettes.
The cost of a reusable curette is relatively high compared to available disposable curettes, and the instrument therefore must serve the user over a relatively long term in order to justify its cost. Typically, after a period of use, the cutting blade of a reusable curette will become dull and must be sent out for resharpening. In addition, there are the costs of time, material, equipment, energy and labor involved in the repeated cleaning and sterilization of reusable curettes. Still further, a practitioner who sees patients in more than one examination room, or in multiple office locations, will require duplicate sets of such instruments to ensure that a set of suitable, freshly sterilized, sharp curettes are always available in each examination room or office location while others are being sterilized or sharpened. As may be appreciated, the costs associated with curette procurement and maintenance can be substantial.
Of course, many of the logistical and financial drawbacks attendant to the use of reusable curettes disappear entirely if one instead chooses to use only disposable curettes. However, disposable curettes also have their associated drawbacks.
Specifically, presently available disposable curettes are comprised of an inseparable handle and stainless steel blade assembly which is intended to be disposed of entirely after a single use. Thus, although sharpening, cleaning or sterilization costs do not arise, the full replacement cost of the curette, while much lower than the cost of a reusable curette, must be paid with each use.
Another disadvantage of some disposable curettes is the use of a rather thin gauge material for the loop-form cutting blade. A curette blade formed of such thin gauge material may tend to deform under mechanical pressure and therefore will not have a consistent feel in use. Thus, an unduly thin gauge curette blade may be more difficult to control and use, regardless of the experience of the user.
Additionally, presently available disposable curettes may tend to be less sharp than either a new or resharpened reusable curette. This may be due to mechanical limitations encountered in the sharpening of the thin gauge blade material.
A final disadvantage of presently available disposable curettes is the lightweight plastic handle which does not have the same feel or shape as the stainless steel handle of a reusable curette. No choice of handle is available since these disposable curettes are all manufactured with the same handle style.
Among the prior art relating to curettes in general are U.S. Pat. Nos. 2,569,237, 2,617,420, 2,651,068, 4,044,770, 4,785,796, 4,791,924, 4,932,957 and 5,116,346, as well as British Patent 1,192,654. Several of these patents disclose curette instruments with a loop-form blade or a non-cutting loop-form working end. Other examples of related art include U.S. Pat. Nos. 1,089,018, 3,502,082 and 4,414,974.

Disposable curette and method of manufacturing the same


A cutlery utensil dispenser has a dispensing tray with a floor and a region housing a cutlery utensil. The cutlery utensil has first and second portions and is moved by an engagement portion of an actuator from a first orientation to a second orientation. In the first orientation, the cutlery utensil rests on the floor in the region and is within the cutlery utensil dispenser, inaccessible to a user. In the second orientation, the second portion of the cutlery utensil projects from the cutlery utensil dispenser and is accessible to the user. A wall of the region has a fulcrum end dimensioned to engage the cutlery utensil. The cutlery utensil rotates about the fulcrum end responsive to the engagement portion toward an exit of the dispenser.

The present disclosure relates generally to a method of dispensing cutlery utensils, such as with a cutlery utensil dispenser, from, for example, single and multiple stacks of cutlery utensils.
Eating facilities often provide cutlery utensils in dispensing bins, where all customers place their hands into the bins in order to retrieve a knife, fork, spoon or spork. While such arrangements provide for economical dispensing of cutlery utensils, as opposed to sets of utensils being separately wrapped in plastic sleeves, the open air bins are not very hygienic, and can spread hand-carried bacteria and the like to other utensils in the bin or potentially to another customer.
In an attempt to address concerns relating to the hygienic dispensing of cutlery utensils, enclosed dispensers have been employed where a stack of cutlery utensils is placed in a utensil compartment and the cutlery utensils are dispensed one at a time on command by operation of a dispensing lever. Such arrangements may be suitable for their intended purpose, but are also limited by the capacity of utensils they are capable of holding. One remedy to such a capacity issue may be to simply make the utensil compartment taller, thereby enabling multiple stacks of pre-measured and pre-assembled cutlery utensils to be placed one on top of the other. However, such a dispenser would be quite tall, would require refilling from a relatively high level, and would require each of the separate stacks to be properly aligned one on top of the other during refilling so that the cutlery utensils are properly aligned for dispensing. Additionally, the cutlery utensils being dispensed must be made accessible to the user, preferably by making only the handling portion of the cutlery utensil accessible to enhance hygiene of the utility end of the cutlery utensil. In view of these and other issues, there is a need in the art for an improved cutlery utensil dispensing method and dispenser for implementing such a method.

Cutlery utensil dispensing apparatus and method


Provided is an optical glass having a high refractive index and high light transmittance. The optical glass contains, in terms of mol % based on oxides, SiO2: 9.0% to 11.0%, B2O3: 22.0% to 24.0%, La2O3: 18.0% to 20.0%, and TiO2: 30.0% to 31.0%.

In recent years, head mounted displays (HMD) compatible with, for example, augmented reality (AR), virtual reality (VR), and mixed reality (MR) have been a topic of interest. As a light guide plate for this optical device, it is known to use a glass having a high refractive index. For a light guide plate for HMD, the thickness of the light guide plate and a refractive index, which greatly affects flexibility in the total design of HMD, are particularly important. For example, Patent Literature 1 discloses a high-refractive-index glass for HMD, the glass having a refractive index of approximately 2.0.


An apparatus for manipulating a material is provided. The apparatus may comprise a magnetic device arranged in a three-dimensional configuration. The apparatus may comprise a surface on which at least one carrier is configured to move. The magnetic device may be configured to provide a magnetic field for driving the carrier on the surface to manipulate a material. The apparatus may comprise a controller configured to control the magnetic device to modulate the magnetic field. The controller may be further configured to detect a position and/or motion of the carrier.

Mechanical systems have long been used for material manipulation and transport. As an example, mechanical systems can be used to generate simple two-dimensional ("2D") braided preforms such as rope and sleeve constructions. However, these systems are not easily configurable and often suffer from poor adaptability. In particular, existing mechanical systems may be unable to meet some of the challenges and requirements associated with three-dimensional ("3D") braiding. In 3D braiding, fiber is routed through complex paths using moving carriers, in order to capitalize on the specific strength of the fiber in certain directions.
Complex mechanical systems may enable a higher degree of carrier path adaptability, and can be used for 3D braiding. However, such systems are difficult to implement due to limitations in scale, as well as the dimensional complexity of parts that need to be manufactured. For example, challenges arise in manufacturing parts that can hold, move and pass carriers in a precise manner through a variety of complex paths.
In some cases, a greater degree of carrier path adaptability may be attainable by replacing a mechanical system with an electromagnetic system. However, existing electromagnetic systems have shortcomings, such as an inability to maintain line tension during motion of a carrier, which can increase the risk of carrier ejection or misalignment. This renders existing electromagnetic systems unsuitable for 3D braiding applications that require proper line tension or precise alignment. From the above, it is seen that an improved apparatus and method for enabling a high degree of carrier path adaptability is desired.

Apparatus and methods for material manipulation


A test instrument and method for testing switched LANs using a set of available MIBs in a switch is provided. The test instrument is designed for the characterization, diagnosis, and testing of a LAN having at least one switch which divides the network traffic into segments. A network device such as a switch will have a set of available MIBs, usually determined by the vendor, which may be accessed via an SNMP agent in the switch. Using the information selectively gathered from this set of available MIBs, various reports may be generated and displayed as reports which allow for a detailed analysis of switch parameters and traffic patterns. For any given report, optimal data items are chosen according to a predetermined hierarchy which provide the most pertinent, detailed information for each given report.

This invention relates generally to test instruments for local area networks (LANs) and in particular to a method in a test instrument for analyzing and testing a switched LAN.
Increasingly complex LANs now connect more and more types of devices including personal computers, work stations, file servers, and printers. Network hubs are often the central devices in a network through which information flows. Each client device connects to the LAN via adapters called network interface cards (NICs) to form nodes. Connecting the nodes to the hubs are network links which may be unshielded twisted pair (UTP) wire, coaxial cable, or fiber optic cable.
Network protocols for controlling the communication of information between the nodes have been developed, including Ethernet which is defined according to the IEEE 802.3 standard and Token Ring which is defined according to the IEEE 802.5 standard. Ethernet uses a method called carrier-sensing multiple access with collision detection (CSMA/CD) to control information flow and resolve collisions between nodes. A node can send information on the network only if no other node is currently sending information. If a node tries to send information at the same time as another node, a collision occurs and each node operates according to a defined "back off" procedure to resolve the collision. Each node will wait a random period of time to attempt to send the information again.
Because Ethernet is typically implemented in a baseband, broadcast network, every node receives the information sent by every other node within the collision domain. In order to minimize the burden on the software operating in host personal computers (PC's) connected to the network, a hardware layer with a hardware or media access control (MAC) address passes along to the software layer only the information appropriate for that node. Such information may be in the form of a "broadcast" message intended for all nodes in the network or as a message only for the intended node with the MAC address.
Information sent over an Ethernet network is in the form of discrete packets defined according to the seven layer Open Systems Interconnection (OSI) standard maintained by the American National Standards Institute (ANSI). OSI is a layered structure in which the highest layers take advantage of the capabilities of the lower layers to send information between nodes. Information is passed between nodes in the form of discrete packets containing data or control information supplied by the various OSI layers. The highest layers are the Application layer, the Presentation layer, and the Session layer which may include Telnet, File Transfer Protocol (FTP), Simple Mail Transfer Protocol (SMTP), and Domain Name System (DNS).
The Transport layer typically includes the Transmission Control Protocol (TCP) along with the User Datagram Protocol (UDP), among others, which provide for the delivery of the data to a desired device and the division of the information into discrete packets for sending. Received packets are reassembled in a like manner. The Network layer (level 2) routes messages back and forth between a source node and a destination node according to Internet Protocol (IP) addresses by adding an IP header to each packet indicating the source and destination IP addresses. The lowest layer is the physical link layer in which the hardware MAC addresses are used.
The original Ethernet baseband model, in which all of the network devices reside on the same collision domain, typically linked together on a common coaxial cable or by using a shared hub in the 10BASE-T environment, is commonly referred to as a shared LAN. Because of increasing demands for available bandwidth, shared LANs are rapidly giving way to switched LANs in which a switched hub (switch) replaces or supplants the shared hub. Now, each collision domain may be separated into segments, with the switch selectively switching traffic between various segments of the LAN. The most common architecture of a switched LAN is to provide a switch between a number of segments, with each segment typically comprising separate work groups and with the majority of network traffic traveling between the server and each of the segments. With the exception of the segment that the server is on, each of the other segments benefit from increased bandwidth because they do not see the network traffic from the other segments. Because the server's segment typically becomes the performance bottleneck in the LAN, its maximum speed is increased, for example from 10 Mbps to 100 Mbps, to increase overall network performance.
IP broadcast messages on one segment are forwarded to other segments within the same broadcast domain. Higher level switching functions such as virtual LAN (VLAN) have been implemented which determine the scope of a broadcast domain.
Network managers need to have the ability to control network devices and monitor the traffic patterns within a given LAN using a central console which uses network management software to control multiple switches, routers, bridges, and other network devices. Built-in processing capability operating according to known standards is typically provided within each of these network devices, allowing them to be remotely programmed and queried to provide data back to the central console via SNMP (simple network management protocol) commands. SNMP is the current TCP/IP network management protocol defined according to RFC 1157. The built-in processing capability in the network devices operates in software as an SNMP agent which keeps control and status information that the network manager can access in the form of a MIB (management information base). A MIB specifies the data items a device must keep and the operations allowed on each data item.
Because no single vendor owns the TCP/IP technology, the Internet Architecture Board (IAB), and the Internet Engineering Task Force (IETF) which operates under the IAB, sets the standards using a series of technical reports called Requests for Comments (RFCs). Further information about the IAB, IETF, and RFCs may be found in Comer, Douglas, E., "Internetworking with TCP/IP, Volume 1: Principles, Protocols, and Architecture", Prentice-Hall, Inc., 1995.
The standard TCP/IP MIB is known as MIB-II, which is defined according to RFC 1213. Network devices may support other MIBs in addition to the standard MIB-II. RMON (remote monitoring) MIBs, defined according to RFC 1757, provide additional information not available from MIB-II, such as more detailed statistical and error information on any particular port of a switch. Transmission MIBs, including Ethernet according to RFC 1643, FDDI (fiber distribution data interface) according to RFC 1285 and 1512, and Token Ring according to RFC 1748, are tailored to provide information particular to the network media. Bridge MIBs, defined according to RFC 1493, contain a table of MAC addresses attached to various ports of the switch. Finally, a vendor may choose to adopt their own private MIBs, which, although adhering to agreed upon protocols defined according to the RFCs, contain proprietary commands and data items. The number of MIBs continues to expand as network devices gain improved capabilities and functionality.
While network management software provides for overall network control as well as detailed monitoring of any particular condition on the network using the available MIBs, the capability of such software to troubleshoot and find errors may be overwhelmed by the volume of information that may be collected. No capability is provided to selectively obtain information pertinent for troubleshooting and analysis. The problem is exacerbated by the increasing use of switches which divide the network traffic into segments, thus making the use of such diagnostic tools as protocol analyzers impractical. Therefore, it would be desirable to provide a method for testing switched LANs by using the information gathered from the set of available MIBs in the switch to provide useful diagnostic information to the user.

Method of testing a switched local area network