An illumination arrangement comprising a plurality of light-emitting semiconductor components (1), arranged in a row, a diffuser (2), which is illuminated by the light-emitting semiconductor components during operation of the illumination arrangement, intermixes light emitted by the semiconductor components during operation and has a light coupling-out area (200) remote from the semiconductor components, and two mutually opposite, reflective longitudinal side faces (3), between which the row of light-emitting semiconductor components is arranged, which run perpendicular or obliquely with respect to the light coupling-out area, and which reflect at least part of the light emitted by the light-emitting semiconductor components during operation in the direction toward the light coupling-out area.

The present application relates to an illumination arrangement, a multiple light module, a luminaire and the use thereof.
One object of the present application is to provide an illumination arrangement which emits light having a particularly homogeneous luminance distribution, which light, in particular, can be optically imaged particularly well.
A further object of the present application is to provide a luminaire comprising an illumination arrangement of this type, a multiple light module and a use of the illumination arrangement, of the luminaire and of the multiple light module, respectively.
An illumination arrangement is specified. The illumination arrangement comprises a plurality of light-emitting semiconductor components arranged in a row, a diffuser, which is illuminated by the light-emitting semiconductor components during operation of the illumination arrangement, and two mutually opposite, reflective longitudinal side faces, between which the row of light-emitting semiconductor components is arranged.
The diffuser intermixes light emitted by the semiconductor components during operation. In particular, it scatters light emitted by the semiconductor components during operation. It has a light coupling-out area remote from the semiconductor components. The two mutually opposite, reflective longitudinal side faces run perpendicular or obliquely with respect to the light coupling-out area of the diffuser and reflect at least part of the light emitted by the light-emitting semiconductor components during operation in the direction toward the light coupling-out area.
In the context of the present application, the expression "arranged along a row" encompasses in particular embodiments in which the light-emitting semiconductor components succeed one another in a main extension direction. By way of example, the light-emitting semiconductor components are arranged linearly or as a zigzag chain. An arrangement of the light-emitting semiconductor components along an (imaginary) curved line is also conceivable.
In one advantageous configuration, the illumination arrangement has two mutually opposite transverse side faces, which run perpendicular or obliquely with respect to the longitudinal side faces and the light coupling-out area, and a carrier opposite the diffuser.
The transverse side faces, the longitudinal side faces, the diffuser and the carrier preferably partly or completely enclose an interior space in which the light-emitting semiconductor components are arranged. To put it another way, the transverse side faces, the longitudinal side faces, the diffuser and the carrier form a luminous box with an interior space in which the light-emitting semiconductor components are arranged. The longitudinal side faces and/or the transverse side faces are preferably arranged perpendicular to the light coupling-out area; by way of example, the luminous box is a parallelepiped.
In one advantageous configuration, the longitudinal side faces are formed in diffusely reflective fashion. The reflectance of the longitudinal side faces, at least for the light which is emitted by the light-emitting semiconductor components and impinges on the longitudinal side face, is preferably greater than 90% and particularly preferably greater than 94%.
With the illumination arrangement, a particularly homogeneous luminance distribution can advantageously be obtained at the light coupling-out area of the diffuser.
In one preferred configuration, at least one of the light-emitting semiconductor components comprises an optical device, in particular a lens, which has a radiation exit area having a concavely curved partial region and a convexly curved partial region, which at least partly surrounds the concavely curved partial region. Preferably, the optical device has an optical axis which particularly preferably runs through the concavely curved partial region of the radiation exit area. In one advantageous configuration, the radiation exit area is embodied rotationally symmetrically with respect to the optical axis.
The intensity of the light which is emitted by the semiconductor component during operation and which is emitted from the semiconductor component at an angle to the optical axis is advantageously increased in comparison with the intensity of the light which is essentially emitted along the optical axis. The area illuminated by the light-emitting semiconductor component is advantageously enlarged with the optical device. Preferably, the maximum angle of emergence of light from the semiconductor component with respect to the optical axis is at least almost 90°. The number of semiconductor components which illuminate a predetermined location of the diffuser and/or of a longitudinal side face is therefore particularly large if one of the light-emitting semiconductor components, but preferably a plurality, in particular all, of the light-emitting semiconductor components have such an optical device. In this way, the number of light-emitting semiconductor components whose light is superimposed at a location of the diffuser is advantageously increased, such that the light emitted by the light coupling-out area is particularly homogeneous.
In a further configuration of the illumination arrangement, the illumination arrangement comprises a light-emitting semiconductor component which during operation, emits light having a spectral distribution which brings about a red, orange, yellow, green, blue or white color impression.
In one advantageous configuration, a first one of the light-emitting semiconductor components emits light having a first spectral distribution during operation, and a second one of the light-emitting semiconductor components, which is adjacent to the first semiconductor component, emits light having a second spectral distribution, which is different from the first spectral distribution, during operation.
In one advantageous development of this configuration, the illumination arrangement comprises at least one group of four light-emitting semiconductor components succeeding one another along the row, said group comprising one semiconductor component which emits red light, one which emits green light, one which emits blue light and one which emits white light. A particularly high color rendering quality, for instance a particularly high color rendering index, is obtained in this way. As an alternative, the semiconductor component emitting white light can also be omitted, such that each group has only three light-emitting semiconductor components.
In particular, the diffuser or the diffuser and the diffusely reflective longitudinal side faces intermix advantageously light from a plurality of the light-emitting semiconductor components which emit light having different spectral distributions, for example light of the first and of the second semiconductor component or light from at least two, but preferably all, semiconductor components of the group of light-emitting semiconductor components succeeding one another along the row.
In one advantageous configuration, the chromaticity coordinate of the light emitted by the light coupling-out area is adjustable, in particular by means of the energization of the light-emitting semiconductor components. The chromaticity coordinate is the color impression of the emitted light as represented in the CIE standard calorimetric system of the Commission Internationale de I'Eclairage of 1931.
In intermixing of the light emitted by the light-emitting semiconductor components is advantageously obtained by means of the reflective longitudinal side faces, by means of the diffuser and, if appropriate, also by means of the optical device(s), such that the light emitted by the light coupling-out area has a uniform chromaticity coordinate.
In a further advantageous configuration, the illumination arrangement has, at least one end of the row of light-emitting semiconductor components, a transverse side face which is illuminated by at least the semiconductor component arranged at the end of the row and which is intentionally formed such that it is absorbent for a light emitted by the semiconductor component.
The transverse side face which is intentionally formed such that it is absorbent reflects for example 30% or less, preferably 15% or less, particularly preferably 5% or less, of the light which is emitted by the semiconductor components and impinges on said side face. By way of example, the absorbent transverse side face is an area of an absorber which is produced from a dark, in particular black, material or a dark, in particular black, material composition or is provided with such a material or material composition.
In addition or as an alternative, in a further advantageous configuration, the reflectivity of at least one of the longitudinal side faces in an edge region of the illumination arrangement is lower than the reflectivity of the longitudinal side face in a central region of the illumination arrangement. The edge region comprises in particular the absorbent transverse side face. By way of example, the reflective longitudinal side face in the central region of the illumination arrangement has a reflectivity of 90% or more, preferably of 94% or more. In the edge region, a minimum reflectivity of the longitudinal side face is less than or equal to 50%, preferably less than or equal to 30%, particularly preferably less than or equal to 15%. In one advantageous development, the reflectivity of the longitudinal side face in the edge region increases continuously or in stepped fashion in the direction toward the central region.
By way of example, the longitudinal side face is provided with an absorbent material or an absorbent material composition in the edge region. In one advantageous configuration, the absorbent material or the absorbent material composition is applied in the form of absorbent structural units. Preferably, the density and/or the size of the absorbent structural units in the edge region decreases continuously or in stepped fashion in the direction toward the central region. The structural units can, for example, be dots (like circles and/or squares) and/or stripes.
Expediently, at least one of the light-emitting semiconductor components, preferably a plurality of the light-emitting semiconductor components, for example two or three semiconductor components, but in particular not more than five semiconductor components, is/are arranged in the edge region.
The absorbent transverse side face and/or the longitudinal side face(s) having a reduced reflectivity in the edge region reduce the risk of light from the light-emitting semiconductor components arranged in the edge region not being sufficiently intermixed with light from other semiconductor components, which are arranged for example in the central region. In particular, the risk of the color impression of the light emitted by the illumination arrangement in the edge region deviating from the color impression of the light emitted by the illumination arrangement in the central region is reduced. To put it another way, the risk of the occurrence of a so-called color fringe in the edge region of the illumination arrangement is reduced.
Preferably, the value and/or the change of the reflectivity of the longitudinal side face in the edge region is adapted to the luminous flux emitted by the semiconductor component(s) arranged in the edge region during operation.
In one advantageous configuration, the light emitted by the light coupling-out area of the illumination arrangement has an at least approximately Lambertian intensity distribution. In particular, in the case of a Lambertian intensity distribution, the luminance is independent of the viewing direction. In this case, the luminous intensity decreases with the cosine of the angle between viewing direction and surface normal of the light coupling-out area.
In a further advantageous configuration, the light emitted by the illumination arrangement essentially has the same chromaticity coordinate at every location of the light coupling-out area; in particular, no local variation and/or fluctuation of the chromaticity coordinate of the light coupling-out area can be resolved by the human eye.
In a further advantageous configuration, the illumination arrangement has a beam shaping device disposed downstream of the light coupling-out area. The beam shaping device comprises for example a lens, a reflector, in particular a mirror, and/or a diffraction grating. Preferably, the beam shaping device has a cylinder- or cylinder-segment-shaped geometry. In one configuration, the center axis of the cylinder is running parallel to the light coupling-out area and preferably also parallel to the row of the light-emitting semiconductor components. The beam shaping device preferably alters the angular distribution of the radiation emitted by the light coupling-out area.
The illumination arrangement can contain at least one further light-emitting semiconductor component which is not arranged in the row. By way of example, two or more rows of light-emitting semiconductor components run parallel to one another. Preferably, however, the illumination arrangement has a larger number of light-emitting semiconductor components in a direction of the row than a direction perpendicular to the row. It then has the form of a light string. In one configuration, a plurality of illumination arrangements are arranged in a series in order to extend the light string. In addition or alternatively, a plurality of illumination arrangements are arranged alongside one another in a direction perpendicular or obliquely to the main direction of extension of the row of semiconductor components. In particular, they constitute a multiple light module comprising a plurality of illumination arrangements strung together and/or arranged alongside one another as individual light modules.
In one advantageous configuration of the invention, a luminaire has at least one such illumination arrangement. The illumination arrangement is particularly well suited to a luminaire since the light emitted by the light coupling-out area can be optically imaged particularly simply and flexibly. By way of example, the luminaire is a ceiling luminaire, a spotlight, for example a floodlight, a table luminaire or a headlight.
The illumination device or the luminaire is suitable for example for the direct or indirect illumination of a room, for instance for the interior illumination of a transport means, in particular of an aircraft cabin, or of a company building.

Illumination arrangement, multiple light module, luminaire and use thereof

OSRAM Gesellschaft mit beschränkter Haftung


The invention concerns an overcapping cover (1), comprising a head (5) and a skirt (4), and easy-to-open means, consisting of a line of weakness, borne by the skirt, and characterised in that: a) the easy-to-open means comprises at least a so-called lower line of weakness (44) located on the cover at a height H which defines a partition of said cover with a so-called upper part (10) and a so called lower part (11); b) said upper part (10) comprises a gripping tab (46) interposed between notches or recesses (460, 461); c) said cover comprises at least additional means selected among: a second line of weakness (43) in said upper part (10), means reinforcing (67) all or part of the lower part (11) means for fixing (66) on the neck of all or part of said lower part (11), means for reinforcing all or part of said upper part (10), such that when it is opened for the first time, the tear strip (45) formed by pulling the tab (46) removes along with it the whole upper part (10).

So-called easy-to-open covers, such as those in FIGS. 1 to 5, are already known. Typically there are two types of covers: those with a tear strip often called a "Tircell" shown in FIGS. 1 to 3, and those with a single or double dashed or dotted line of weakness shown in FIGS. 4 to 5.


A pressure molding method and apparatus uses a mold with a casting cavity and a pouring gate through which a molten metal is fed into the casting cavity. After feeding a molten metal into the mold through the pouring gate to fill the casting cavity and pouring gate, a cap member is placed on the mold to bring its open end into contact with a dead head of the molten metal in the pouring gate of the mold so as to form an air-tightly sealed chamber between the cap member and dead head of the molten metal. Pressure is supplied into the sealed chamber to force the molten metal in the mold through the dead head.

1. Field of the Invention
The present invention relates to a molding method and apparatus therefor, and more particularly to a method of pressure molding casting and an apparatus therefor in which sufficient force is applied to a molten material in a mold by a compressed gas to force the material into the mold.
2. Description of Related Art
In conventional pressure molding methods, a molten material is fed into a casting cavity of a mold made of particulate refractory through a pouring gate communicating the casting cavity to the exterior of the mold. Thereafter, a part surrounding the pouring gate of the mold is covered by a cover member formed with a peripheral flange to which a flexible sealing member is attached to form therein a pressure chamber in communication with a pressure source so as to conceal the pouring gate completely. Compressed air is then supplied into the pressure chamber of the cover member to force the molten material to stay in the pouring gate. A molding device embodying such a pressure molding method is known from, for example, Japanese Utility Model Application No. 61-131900 entitled "Full Mold Casting Device" filed on Aug. 28, 1986 and laid open as Japanese Unexamined Utility Model Publication No. 63-41352 on Mar. 18, 1988.
The molding device as described in the above publication deforms a flexible sealed member to conform to an opening of the pouring gate so as thereby to forcibly press the molten material in the pouring gate. The molding device, however, has a problem in that the flexible sealing member is damaged by heat transmitted thereto from the molten material. Accordingly, compressed air in the pressure chamber of the cover member escapes into the mold of particulate refractory. Thus, sure pressurization of the molten material in the pouring gate, and hence in the casting cavity of the mold, is not always provided. Accordingly, a product cast by such a molding device blow holes and/or has a structure with a non-uniform density.


Methods (100, 200, 300) in a wireless portable communication device and wireless communication network for resolving subsidy lock by transmitting and receiving messages over-the-air are provided. Upon entering a restricted mode of operation (118, 204), the wireless portable communication device transmits a request to the wireless communication network requesting to deactivate the restricted mode of operation (120, 212). In response, the wireless portable communication device receives a message deactivating the restricted mode of operation (122, 214).

In a wireless portable communication device, such as a cellular telephone in used in Global System for Mobile Communications ("GSM"), a Subscriber Identification Module ("SIM") card is used to store various information pertaining to a subscriber. Generally, the subscriber is able to use any compatible cellular telephone by inserting the SIM card into the cellular telephone, provided that the subscriber is able to access the SIM card. The subscriber may be locked out of the SIM card if he fails to enter the correct access code such as a password within a predetermined time or within a predetermined number of attempts, or when his contract with the service provider expires. When the subscriber is locked out, the SIM card allows the subscriber to make only an emergency call. After a predetermined lockout period expires, the subscriber is allowed to re-enter the password, and the phone is placed in a normal operation mode upon successful entry of the password.
In a wireless communication network, a subsidized subscriber generally has an agreement with a subsidizing network service provider for a specified period as defined in the contract. A subsidized wireless portable communication device used in the wireless communication network features a module such as a SIM card having a subsidy lock mode, which prevents the subscriber from making voice or data calls or Short Message Service ("SMS") message in a network other than that of the subsidizing network service provider. For the subscriber to be able to use the wireless portable communication device in a non-subsidizing network or after the expiration of the contract, the subscriber must enter an access code provided by the subsidizing network service provider to access the SIM card. Otherwise, the subscriber is only allowed to make an emergency call. The access code is generally provided via a voice call to a service center. In some case, however, the subsidized wireless portable communication device needs be taken to the service center for unlocking and/or renewing of the service contract to avoid disclosure of the access code by the subsidizing network service provider.


Feedback control is performed on the potential of a bit line in accordance with a change in the potential. Meanwhile, the data which has been previously read on the bit line is temporarily latched in a D-type flip-flop. A reference voltage Vref determined by a bias circuit is offset by using an offset circuit while referring to the level of the previously read data latched in the D-type flip-flop. In this manner, a bias voltage is obtained from currently read data, and based on the bias voltage, the potential of the bit line is controlled. Thus, high-speed data determining operation is achieved, which has been previously hampered when the currently read data is reversed with respect to the data read in the previous cycle.

1. Field of the Invention
The present invention generally relates to data determining circuitry and a data determining method for determining the level of a data line used in a semiconductor circuit system. More particularly, the invention relates to current-mode-sense-type data determining circuitry for determining the level of a data line by detecting a current flowing in a drive circuit for the data line. The invention is also concerned with a data determining method used for the above type of circuitry.
2. Description of the Related Art
As a method for transferring data in a large scale integrated circuit (LSI) a current-mode transfer method is known and is becoming popular, since current-to-voltage conversion and low-amplitude high-speed transfer are possible in this method. For example, in a semiconductor memory circuit system, the current mode transfer is employed in a sense amplifier. Advantageously, in the current mode sense type, precharging is not required during the reading operation.
FIG. 4 is a schematic diagram illustrating the concept of a current mode sense amplifier. In FIG. 4, a P-type MOSFET (hereinafter referred to as "the PMOS") Trp31 and an N-type MOSFET (hereinafter referred to as "the NMOS") Trn31 are connected in series to each other between a power supply VDD and one end of a bit line 31. More specifically, the source electrode of the PMOS Trp31 is connected to the power supply VDD, while the source electrode of the NMOS Trn31 is connected to one end of the bit line 31. The drain electrode of the PMOS Trp31 is connected to the drain electrode of the NMOS Trn31, thereby forming a node N31. A sense output is extracted from the node N31.
The PMOS Trp31 is configured to act as a diode in which the gate electrode and the drain electrode are connected. The PMOS Trp31 is equivalent to a resistor which is offset by an amount equal to a threshold. Further, a reference voltage Vref is applied to the gate electrode of the NMOS Trn31. A memory cell 32 is connected between the other end of the bit line 31 and a ground GND. The memory cell 32 has the function of determining whether or not a current is caused to flow to the GND according to the state of the data stored in the memory cell 32.
In the circuitry configured as described above, it is now assumed that the memory cell 32 causes a current I to flow to the GND. In this case, the potential VBL of the bit line 31 decreases, increasing the gate-source voltage Vgs of the NMOS Trn31. This elevates the current capacity of the NMOS Trn31, thereby decreasing the drain-source voltage Vds. Namely, the NMOS Trn31 acts as a negative resistor in which the required applied voltage is decreased by causing a current to flow.
In this manner, since the PMOS Trp31 serves as a resistor, while the NMOS Trn31 acts as a negative resistor, the following condition is satisfied. EQU Vds (Trp31)+Vds (Trn31).apprxeq.constant
Accordingly, the potential of the bit line 31 remains almost unchanged regardless of the presence or the absence of the current I. The current-versus-output voltage characteristics of this circuitry are shown in FIG. 5. In this characteristic diagram, VN31 represents the potential of the node N31.
The above-described circuitry presents the following problem. It is difficult to maintain the potential of the bit line 31 at a constant level without a large transconductance gm of the NMOS Trn31. Consequently, the circuitry is configured in the following manner in order to maintain the potential of the bit line 31 at a constant level if the transconductance gm of the NMOS Trn31 is small. Such a circuitry configuration is shown in FIG. 6.
In FIG. 6, the same elements as those shown in FIG. 4 are designated with like reference numerals. The circuitry illustrated in FIG. 6 is similar to the counterpart shown in FIG. 4, except that a bias circuit 33 is newly inserted between the gate electrode of the NMOS Trn31 and the bit line 31. In this circuitry, the bias circuit 33 has a feedback bias mechanism that increases the potential of the output with a decreasing potential VBL of the bit line 31. A specific example of the bias circuit 33 is shown in FIG. 7.
In FIG. 7, the bias circuit 33 is formed of a PMOS Trp32, an NMOS Trn32, and an offset power supply 34. The PMOS Trp32 is connected at its source electrode to a power supply VDD and at its gate electrode to the bit line 31. The NMOS Trn32, which acts as a diode, is connected at its drain electrode to the drain electrode of the PMOS Trp32, at its source electrode to a ground GND, and at its gate electrode to the gate electrode of the NMOS Trn31. The offset power supply 34 is connected between the bit line 31 and a GND.
The operation of the foregoing circuitry is described with reference to the waveform diagram of FIG. 8. A decrease in the potential VBL of the bit line 31 causes a decrease in the potential of the gate electrode of the PMOS Trp32, thereby elevating the current capacity of the PMOS Trp32. This further increases the reference voltage Vref, which is applied to the gate electrode of the NMOS Trn31, and accordingly, the current capacity of the NMOS Trn31 is elevated, thereby limiting the decrease in the potential VBL of the bit line 31.
Conversely, an increase in the potential VBL of the bit line 31 causes an increase in the potential of the gate electrode of the PMOS Trp32, thereby lowering the current capacity of the PMOS Trp32. This decreases the reference voltage Vref, and accordingly, the current capacity of the NMOS Trn31 is lowered, thereby inhibiting a current from flowing into the bit line 31. As a consequence, an increase in the potential VBL of the bit line 31 is limited.
According to the above-described operation of the circuitry, the problem caused by a small transconductance gm of the NMOS Trn31 can be solved. Namely, a change in the potential VBL of the bit line 31 is maintained substantially at a constant level even if the transconductance gm of the NMOS Trn31 is small.
A description is now given of the data detecting operation performed by the above-described known current-mode sense amplifier. A current flowing in the PMOS Trp31 is indicated by Ip, a current flowing in the NMOS Trn31 is indicated by In, a current caused to flow by the memory cell 32 is represented by Imem, and a current caused to flow by the offset power supply 34 is represented by Iss.
If the current Ip is greater than the current In (Ip>In), the charge supplied by a current having an amount equal to (Ip-In) is stored in the node N31. The potential VN31 of the node N31 is changed according to the amount of the stored charge. Moreover, the charge supplied by a current having an amount In-(Imem-Iss) increases the potential VBL of the bit line 31. Because of the increased potential VBL and the influence of the bias circuit 33, the current In flowing in the NMOS Trn31 is reduced.
When the current In eventually becomes equal to the sum of the currents Imem and Iss, the potential VBL of the bit line 31 is determined. When the current Ip becomes equal to the current In, the charge supply is suspended, and then, the potential VN31 of the node N31 is determined. The current In flowing in the NMOS Trn31 depends on the current capacity of the NMOS Trn31. Accordingly, the reference voltage Vref, which is applied to the gate electrode of the NMOS Trn31, is a key factor.
This is explained more specifically in the case where the high (H) level is to be extracted from the node N31. The current In becomes equal to the sum of Imem and Iss (In=Imem+Iss) more easily with a lower current capacity of the NMOS Trn31. It is thus desirable that the gate potential (reference voltage) Vref of the NMOS Trn31 is lower. On the other hand, in the case where the low (L) level is to be extracted from the node N31, the current In becomes equal to the sum of Imem and Iss (In=Imem+Iss) more easily with a higher current capacity of the NMOS Trn31. It is thus desirable that the gate potential (reference voltage) Vref of the NMOS Trn31 is higher.
For example, if the memory cell 32 causes a current to flow, it is preferable that the potential VN31 of the node N31 drops rapidly. Then, the potential VBL of the bit line 31 is lowered, which is fed back to the gate electrode of the NMOS Trn31 by the bias circuit 33, thereby elevating the gate potential Vref of the NMOS Trn31. Obviously, the circuitry is operated faster if the potential is set higher than the gate potential Vref determined by the above feedback control.
In contrast, if the memory cell 32 prevents the flowing of a current, it is preferable that the potential VN31 of the node N31 increases rapidly. Then, the potential VBL of the bit line 31 is increased, which is fed back to the gate electrode of the NMOS Trn31 by the bias circuit 33, thereby reducing the gate potential Vref of the NMOS Trn31. Clearly, the circuitry is operated faster if the potential is set lower than the gate potential Vref determined by the above feedback control.
In the known data determining circuitry described above, however, a bias voltage is obtained by using the bias circuit 33 from the data which is currently read, and based on the bias voltage, the potential VBL of the bit line 31 is controlled. It is thus difficult to set the potential higher or lower than the gate potential Vref determined by the feedback control. Particularly, if the data which is currently read is reversed with respect to the data which is read in the previous cycle, i.e., if the current data is reversed data, the data determining operation is disadvantageously delayed.

Data determining circuitry and data determining method


A multidimensional liquid chromatography separation system has a mobile-phase storage tank, a first liquid transfer device, a second liquid transfer device, a first sample introduction device, a second sample introduction device, a separation device, a collection, storage device, at least two drainage devices and a flow path switching device. A separation method for protein separation using the multidimensional liquid chromatography separation system has the steps of: 1) preparation in advance, 2) the first dimensional separation, 3) collection and storage of the intermediate fraction, 4) the second dimensional or multidimensional separation and repeating the steps 3) and 4).

Field of the Invention
The invention relates to a multidimensional liquid chromatography separation systems for protein separation. In particular, a multidimensional liquid chromatography separation systems using for protein online quick separation is related. The separation method for protein separation using this liquid chromatography separation system is also provided in the present invention.
Description of the Related Art
Liquid chromatography is the most effective methods for analysis, separation and purification of protein, which is widely used in the extraction and separation of active protein from body fluid of natural plant and animal, and preparation and production of all kinds of recombinant protein drug in genetic engineering, and is also the essential equipment in the biochemistry laboratory, for example, protein and peptide separation in proteomics research in order to find the "mark" protein. Because the environment composition biological macromolecules exist is very complicated, it is often called the separation and analysis of biological macromolecules (biopolymers) in complicated components. Chromatographic column is the core of the chromatographic analysis. Scientists have been trying to improve the effect of chromatographic column so that the separation and analysis of general more complex materials can be done on a sample by a single chromatographic column. Chromatographic column is the core of the chromatographic analysis.
For the separation of small solutes, the number of theoretical plate (NTP) of liquid chromatographic column is generally for 104-105. However, for the analysis of more complex mixture, such as component separation in cell, body fluids and tissue of animals, the resolution of conventionally chromatographic column by now is far less than demand, so two-dimensional liquid chromatography (2D-LC) or multidimensional liquid chromatography (mD-LC) must be used to partially solve these problems. The technology 2D-LC and mD-LC has become the research hot-point and development direction of the modern chromatography in future.
For 2D-LC and mD-LC separation, there are two ways: off-line and on-line. 2D-LC separation in early stage mainly employs off-line method. The first dimensional separation is collected by hands, and then the fraction is injected into the second dimensional chromatographic column for separation. If the collected fraction is directly injected into the second column, the sampling amount must be a very small part of the fraction. If whole or most of the collected fraction is required to inject into the second column, the collected fraction must be pre-treated (concentration, buffer exchange). Off-line method has shortcomings, such as time-consuming, difficult to operate, sample contamination easily, low recovery and poor repeatability etc.
To satisfy the request of 2D-LC and mD-LC methods, several companies have been exploring the on-line method accompanying with producing several liquid chromatographs. However, from the standpoint of principle, these chromatographs are only improved based on the conventional chromatograph, and a set of chromatographic column (2-3 pieces) are inserted in parallel manner, as well as switch interfaces between these parallel chromatographic columns assembled, so as to transporting the fraction from one of the chromatographic columns to another for the separation of next mode by on-line manner. There are many problems existing in these on-line 2D-LC and mD-LC methods, such as the problem of mobile phase compatibility should be solved between different patterns of chromatography combination and the required interface is also a key technical problem.
Switch interface is the key device to the whole system of mD-LC technique. Commonly used ones are sample loops storing and transferring samples alternately, parallel columns enriching analytic samples alternately, capture column enriching samples, as well integrated two chromatographic columns with no interface. However, these instruments all have fatal flaw. On-line 2D-LC and mD-LC liquid chromatograph with interfaces can only inject 1-10% of the samples (only a few microliter) collected in the first dimension to the second dimensional chromatographic separation. In addition, it can be not used for protein separation in preparation scale, especially in industrialization production scale; As for mixed-mode chromatographic column without interfaces, two kinds of mobile phases must be completely compatible. Only in some specific circumstances, such as strong cation exchange chromatography (SCX) packing material being the first dimension and reversed phase liquid chromatography (RPLC) packing material being the second dimension, can such on-line two-dimensional separation be done. If the packing materials are packed on the contrary, this no switcher method will be useless.
Based on the background of this scientific development, scientists put forward the method of "mixed-mode chromatography (MMC). MMC is a type of chromatographic method in which multiple interaction modes take place between the stationary phase and solutes in the feed. This method has higher selectivity and high chromatographic column load, which provides selections and ideas for the development of semi-preparation and the preparation chromatography. However, in comparing with the traditional chromatographic column with the separation mode controlled by only one kind of force, MMC is controlled mainly by one kind of the two forces and the other one is the auxiliary, thus it only plays a role of improving the main separation mode. As a result, it is still employed for "one column-one usefulness".
As early as in the 80s, Guiochon et al. (Chromatographia, 17 (3), 124-121, 1983) have put forward the method of 2D-LC with two dimensional chromatographic columns. The two-dimensional here refers to is the two-dimensional (plane) chromatography in space and the two-dimensional chromatographic column is for square (10 cm×10 cm), just as the conventional thin-layer chromatography plate. They applied for a patent, but didn't get it promoted and it has not been found any application in literature. Generally speaking, what we use in two-dimensional chromatography is the cylindrical chromatographic column. Two years ago, the patent applicant et al. put forward the "on-line two-dimensional liquid chromatography of protein separation with a single-column", using the cylindrical two-dimensional chromatographic column. Several valves and spiral sample loops are inserted into the conventional liquid chromatograph, and then, with a cylindrical two-dimensional chromatography column, we carried out the fast 2D-LC separation of proteins. However, there are still problems existing of this method: (1) The maximum flow rate of the chromatograph is limited to 5 mL/min and the maximum volume of the sample loop of the collect-reserve device is only 5 mL, its can only operate on the analysis scale and can be not applied to preparative and productive scales; (2) This instrument is set for protein separation with one chromatographic column, therefore, it can be not employed to approach to the goal to obtain target protein with high purity which can only be carried out by means of mD-LC method using several types of chromatographic columns (such as the purity of insulin injections for protein >99%); (3) There is no strong theoretical support to design a multi-dimensional chromatograph and can only manual operate relying on experience. We neither can design software which is necessary to control modern instruments. What's more, this method can not be applied for polypeptide separation at that time; (4) All the chromatographic columns are specially made for "2D-LC" and there is no commercial products, so it is difficult to be employed by other chromatographers; (5) More importantly, there are only several equipment accessories patching up disordered on the conventional liquid chromatograph which is only employed to support the possibility for establishing this method. There is no whole idea of the framework on manufacturing equipment, technical scheme or technical parameters on how this method can carry out. There are more advantages that the 2D-LC is implemented using cylindrical 2D chromatography columns (simply called it as 2D column) than the flat form 2D chromatography columns.
Even so, there are several potential advantages of this chromatography: All operations of 2D-LC analysis for protein, including the collection and storage of the fractions from the effluent of the first separation model, the on-line buffer exchange under a high flow rate, the re-equilibrium of the chromatographic system, the on-line re-injection of the samples back to the same 2D column to carry out the second dimensional separation, are all accomplished in a closed system, so as to realize the "on-line two-dimensional chromatogram rapid analysis for proteins with a single-column". This system has features that not only can prevent from the environmental pollution, but also can make the target protein be quantitatively transported to the second dimension chromatographic separation. Therefore, the detection limit and sensitivity of low abundance functional protein in proteomics can be improved 10-100 times, which will greatly accelerate the speed of "top-down-mass spectrometry" strategy in proteomics. If using the MMC mixed mode column, as its column loading is much higher than conventional chromatographic column, it can greatly save cost in the production of protein drugs in large scale.
Considering the potential advantages of this method, the applicant explores an equipment using for protein separation "protein multidimensional liquid chromatography purification system".

Multidimensional liquid chromatography separation system and separation method for protein separation

XI'AN AOLAN SCIENCE AND TECHNOLOGY CO., LTD.


A nitride semiconductor laser element, comprises; nitride semiconductor layers in which a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order; a cavity end face formed by the nitride semiconductor layers; and a protective film formed on the cavity end face, the protective film has a region in which an axial orientation of crystals is different in the direction of lamination of the nitride semiconductor layers.

1. Field of the Invention
The present invention relates to a nitride semiconductor laser element, and more particularly relates to a nitride semiconductor laser element having a protective film of a specific structure on a cavity end face.
2. Background Information
With a nitride semiconductor laser element, end faces of the cavity formed by RIE (reactive ion etching) or cleavage has narrow bandgap energy, so absorption of the exiting light occurs at the end face, this absorption generates heat at the end face, and problems such as a short service life are encountered in trying to obtain a high-output laser. Consequently, there has been proposed, for example, a method for manufacturing a high-output semiconductor laser in which a silicon oxide or nitride film is formed as a protective film on the cavity end face (see, for example, Japanese Laid-Open Patent Application H10-70338). This protective film functions as a window layer, and suppresses the absorption of light at the cavity end face.
However, with a nitride semiconductor laser element, even if the protective film is made from a material capable of suppressing the absorption of light at the cavity end face, there will still be a problem in that the desired function cannot be achieved because the protective film separates or cracks develop in the laminated nitride semiconductor layers due to a difference in the lattice constants of the nitride semiconductors.


System having an apparatus (10) for shredding hygiene products (12), which operates within a revolving device (22).

It is known to reduce size of various material, in particular waste, such as household waste, in rotary drums, and to separate components of such materials. In CH1676938, a system is described with a rotary drum, a part of which may be perforated, an a rotating element, which, when interacting with radial extension of the drum, shreds the materials. In U.S. Pat. No. 4,243,183 a crushing system is described with a rotary drum rotating at a speed. However both of these systems do not perform at sufficient separation function, require significant space and energy. In US 2012/0085848 a comminution apparatus for processing variety of wastes e.g. green wastes is described, which has comminution drums, both comprising projecting macerating features entering into close proximity during rotation of drums about longitudinal. In U.S. Pat. No. 5,322,792. Converting household waste into fermented and non-fermented products, comprising a grinder having three rotating axles in triangular array with fly-chains having hardened tips. In US2008/0099592, a wood processing apparatus is shown, wherein smaller nieces of debris may be separated out.
A typical shredding device, when used for shredding disposable hygiene products (including but not limited to absorbent articles such as diapers for babies or adults, training pants, pull-up diapers, diaper pants, sanitary napkins, panty liners, etc.), outputs a variety of plastic film and/or nonwoven particles all of varying shapes and sizes. Some particles may measure only a few millimeters across in their shortest dimension, while other particles may measure 15 cm across or more in their longest dimension. When larger particles are produced, there is a risk that, later in the process, these particles fold and/or roll up, and where such folds and/or rolls occur, extracting all of the pulp and/or SAP between the folded layers becomes problematic, which may mean that pulp and/or SAP contained within the fold exits, which would then be included in the plastic stream of a disposable hygiene product recycling process and therefore reduces the purity of the respective plastic stream. Furthermore, considering the scenario where smaller plastic film and/or nonwoven particles are produced, no matter how good the next filtration separation processes are, there is always an enhanced risk that smaller particles may contaminate the pulp output material streams of a disposable hygiene product recycling process, as smaller particles can pass through smaller holes in subsequent sieve/separation processes. FIG. 1 illustrates an example of such small particle contaminants.
Thus, it is desirable to utilize a selective shredding device that is capable of shredding particles into a defined particle size, without the risk of creating particles below a defined size. In such a device, it is desirable for particles that have been reduced to a defined size to pass through the selective shredding process without being shredded further to an undesirable size. Such selective shredding based on particle size may be accomplished by applying a pulling and/or tearing force to the product. By slowly pulling apart the disposable hygiene product, and/or by applying single or multiple tears to a disposable hygiene product using a selective shredding device, the smaller pulp and SAP particles may be released from within the disposable hygiene product. If the selective shredding processing is connected to a sieving process, then the difference in component size of the SAP and pulp being released from the disposable hygiene product as compared to the components of the plastic liner of the disposable hygiene product is significant (the liner typically measures between 200 mm to 600 mm versus pulp fibers, which are just a few mm long), thereby allowing a very efficient sieving process to take place and achieving a higher purity in the subsequent pulp/SAP streams having a reduced level of plastic contamination and, in many cases, no plastic contamination.

Selective shredding, sieving, and/or separating device connected to a hygienic production or operating in an off-line location


A file access system for user defined functions (UDFs) can be implemented on a distributed database system. The system can store UDF interfaces and file reference objects that can be called by other users. Upon a UDF being called, files on a stage, one or more interface objects (e.g., InputStream), and file reference objects can be implemented by execution nodes of the distributed database system. The execution nodes can implement multiple threads that are authenticated and can download file data from a staging location concurrently.

Cloud-based data systems such as data warehouses provide users an ability to track and manage large amounts of data. Users can implement functions to process the data, such as user defined functions. However, implementing user defined functions on databases is limited and it is often not computationally practical to scale use of user defined functions on a large file (e.g., a one terabyte file) or a large number of files (e.g., 1,000,000 image files).

This patent is subject to a terminal disclaimer.

Accessing files in a database stage using a user defined function


In one aspect, the invention encompasses a semiconductor processing method. A layer of material is formed over a semiconductive wafer substrate. Some portions of the layer are exposed to energy while other portions are not exposed. The exposure to energy alters physical properties of the exposed portions relative to the unexposed portions. After the portions are exposed, the exposed and unexposed portions of the layer are subjected to common conditions. The common conditions are effective to remove the material and comprise a rate of removal that is influenced by the altered physical properties of the layer. The common conditions remove either the exposed or unexposed portions faster than the other of the exposed and unexposed portions. After the selective removal of the exposed or unexposed portions, and while the other of the exposed and unexposed portions remains over the substrate, the wafer is cut into separated die. In another aspect, the invention encompasses another semiconductor processing method. A layer of (CH3)ySi(OH)4−y is formed over a substrate. Some portions of the layer are exposed to ultraviolet light while other portions are not exposed. The exposure to ultraviolet light converts the exposed portions to (CH3)xSiO2−x. After the exposure to ultraviolet light, the exposed and unexposed portions of the layer are subjected to hydrofluoric acid to selectively remove the (CH3)ySi(OH)4−y of the unexposed portions relative to the (CH3)xSiO2−x of the exposed portions.

Modern semiconductor processing frequently involves photolithographic methods to pattern materials into very small structures, which are ultimately incorporated into a semiconductor circuit. An exemplary prior art method for forming small structures from a layer of material is as follows. First, the layer of material is provided over a semiconductive substrate. Subsequently, a layer of photoresist is provided over the layer of material. A photolithographic mask is then provided over the layer of photoresist and light is shined through the mask to expose portions of the layer of photoresist while leaving other portions unexposed. The photoresist typically comprises an unsaturated organic material, such as, for example, a material comprising one or more unsaturated carbon-containing rings. The exposed portions are rendered either more or less soluble in a solvent relative to the unexposed portions. If the exposed portions are rendered more soluble, the resist is referred to as a positive photoresist (as a positive image of a pattern from the photolithographic mask is transferred to the photoresist), and if the exposed portions are rendered less soluble, the photoresist is referred to as a negative photoresist (as a negative image of the pattern from the photolithographic mask is transferred to the photoresist). In any event, the photoresist is exposed to a solvent and either the exposed or unexposed portions are removed while leaving the other of the exposed or unexposed portions remaining over the layer of material. Such patterns the photoresist into a patterned mask overlaying the layer of material. The layer of material is then exposed to conditions which transfer a pattern from the patterned mask to the layer of material (i.e., which removes portions of the layer of material not covered by photoresist, while leaving the portions of the layer material that are covered by photoresist). Subsequently, the photoresist is removed and the substrate having the patterned layer of material thereon is subjected to subsequent processing steps to form an integrated circuit over the substrate.
Typically, the semiconductive substrate referred to above is in the form of a wafer and a plurality of semiconductor packages (i.e., individual integrated circuits) are simultaneously formed over the wafer. After the formation of the plurality of semiconductor packages is complete, the wafer is subjected to a die-cutting process to separate the individual integrated circuits from one another. In wafer fabrication processes employed to date, photoresist is entirely removed from a wafer prior to subjecting the wafer to a die-cutting process. Among the reasons for removal of the photoresist is that the photoresist is not a material suitable for incorporation into semiconductor circuits. It would be desirable to develop alternative methods for patterning structures during semiconductor circuit fabrication processes.
In an area of semiconductor processing considered to be unrelated to the above-described photolithographic processing methods, a recently developed technique for forming insulative materials is Flowfill™ Technology, which has been developed by Trikon Technology of Bristol, U.K. The process can be utilized for forming either silicon dioxide or methylsilicon oxide ((CH3)xSiO2−x), for example. The process for forming silicon dioxide is as follows. First, SiH4 and H2O2 are separately introduced into a chemical vapor deposition (CVD) chamber, such as a parallel plate reaction chamber. The reaction rate between SiH4 and H2O2 can be moderated by the introduction of nitrogen into the reaction chamber. A semiconductive wafer is provided within the chamber, and ideally maintained at a suitably low temperature, such, as 0° C., at an exemplary pressure of 1 Torr to achieve formation of a silanol-type structure of the formula Si(OH)x, which is predominantly Si(OH)4. The Si(OH)4 condenses onto the wafer surface. Although the reaction occurs in the gas phase, the deposited Si(OH)4 is in the form of a viscous liquid which flows to fill small gaps on the wafer surface. In applications where deposition thickness increases, surface tension drives the deposited layer flat, thus forming a planarized layer over the substrate.
The liquid Si(OH)4 is typically converted to a silicon dioxide structure by a two-step process. First, planarization of the liquid film is promoted by increasing the temperature to above 100° C., while maintaining the pressure of about 1 Torr, to result in solidification and formation of a polymer layer. Thereafter, the temperature is raised to above 400° C., while maintaining the pressure of greater than 1 Torr , to form SiO2. The processing above 400° C. also provides the advantage of driving undesired water from the resultant SiO2 layer.
The formation of methylsilicon oxide is accomplished similarly to that described above for forming silicon dioxide, with the exception that methylsilane ((CH3)zSiH4−z, wherein z is at least 1 and no greater than 4) is combined with the hydrogen peroxide to produce a methylsilanol, instead of combining the silane (SiH4) with the hydrogen peroxide to form silanol.


Provided herein are new methods for the treatment of hyperproliferative diseases affecting the spinal cord, including the use of biodegradable polymers to treat spinal cord tumor recessing, i.e., to patch open zones left by spinal tumor removal. Biocompatible polymeric materials are tailored to fill areas previously occupied by tumors, e.g., materials in the form of tubular articles configured for insertion into the spinal column after surgical removal of a tumor. These protective articles may also include medicinal agents that stimulate spinal column neural regeneration, such as medicines or donor neuronal cells such as human neural stem cells, thus assisting patients to recover motorsensory function after spinal tumor surgery.

Hyperproliferative diseases of the spinal cord including spine and spinal cord tumors encompass a diverse group of pathologic diagnoses that differ markedly based on the location and age of the patients. Spine and spinal cord can be affected by primary and metastatic tumors, making the differential diagnosis and treatment options extensive. Spinal tumors are often characterized based on their primary location: extradural, intradural-extramedullary, and intramedullary tumors. For instance, spinal cord epidural metastasis ("SEM") is a common complication of systemic cancer with an increasing incidence. Prostate, breast, and lung cancer are the most common offenders.
Metastases usually arise in the posterior aspect of vertebral body with later invasion of epidural space. Metastatic epidural spinal cord compression ("MESCC") and the incidence of spinal metastases are becoming a more common clinically encountered entity as advancing systemic antineoplastic treatment modalities improve survival in cancer patients.
Historically, surgery for spinal metastases has included simple decompressive laminectomy with concomitant spinal stabilization. Results obtained in retrospective case series, however, have shown that this treatment provides little benefit to the patient. With the advent of better patient-related selection practices, in conjunction with new surgical techniques and improved postoperative care, the ability of surgical therapy to play an important and beneficial role in the multidisciplinary care of cancer patients with spinal disease has improved significantly. A continuing and unmet need exists for suitable medical devices that may be used to patch opened spinal cord parenchyma left behind after tumor removal, and more generally, for medical devices useful in the surgical treatment of hyperproliferative diseases affecting the spinal cord.

Medical devices for use in the surgical treatment of hyperproliferative diseases affecting the spinal cord

The Children's Medical Center Corporation


A cleaning device for cylinders of printing presses, having at least one wash roll engageable with and disengageable from the cylinders, the wash roll being formed as a brush roll and being sprayable with cleaning fluid, includes straight bristles and wavy bristles arrayed on the brush roll.

FIELD OF THE INVENTION
The invention relates to a cleaning device for cylinders of printing presses, having at least one wash roller engageable with and disengageable from the cylinders, the wash roller being formed as a brush roller and being sprayable with cleaning fluid.
A heretofore known device of this general type (published German Patent Document DE 43 43 692 A1) uses a brush roller which is disposed in a housing. Cleaning fluid or water may be applied to the bristles of the brush roll via nozzles. In order to clean the cylinder outer surface, the brush roll is pivoted toward the outer surface and set rotating. The feeding of cleaning agent takes place at the same time, so that cleaning agent is applied to the outer surface of the cylinder to be cleaned, and loosens dirt and ink residues thereat. The bristles of the brush roll take up the loosened dirt particles and, downline of a doctor device, throw off the particles into the housing, from which they are then able to run off. It has been shown that, at relatively high speed, the straight bristles of the conventional brush rolls very quickly spray off the cleaning fluid applied and, due to the open surface, have a very low storage capacity for the cleaning fluid. Consequently, only a small fraction of the cleaning fluid which is applied reaches the outer surface to be cleaned. At the same time, the straight bristles are not well suited to take off dirt particles, because of the low adhesive capacity thereof. The result of these disadvantages is that there is a relatively high requirement for cleaning agent, and that the time for cleaning of the outer surface is relatively long.
Starting from this state of the prior art, it is an object of the invention of the instant application, to provide a cleaning device for cylinders of printing presses by the use of which the requirement for cleaning fluid and the time needed for the cleaning are reduced. In this regard, it is assumed that the cleaning result meets the requirements, i.e., an equally good cleaning result on the outer casing surface of the cylinder is achieved.

Cleaning device for cylinders of printing presses


A method for the connection of a first component to a second component includes providing a first component which has a projection with an undercut, and providing a second component which has a cavity. The method also includes introducing a sealing and/or connecting material into the cavity of the second component, and joining the first component and the second component together to form a component arrangement. The projection of the first component projects, in the joined state, into the cavity of the second component.

The embodiments of the present invention relate to a method for the sealed and/or positively locking and/or non-positively locking connection of a first component to a second component. The embodiments of the invention also relate to a component arrangement which has a sealed and/or positively locking and/or non-positively locking connection between a first component and a second component.
Two components can be arranged in a sealed and/or positively locking and/or non-positively locking manner. Here, there must always be a sealed and/or positively locking and/or non-positively locking connection between the components to be connected.
However, existing connected components can lift off from one another during operation. Furthermore, it is often the case that different coefficients of thermal expansion exist owing to different materials from which the components are manufactured, whereby the components behave differently in the event of temperature changes. For these two reasons, relative movements between the components occur, which must be compensated by means of the conventional connecting technology.
A problem addressed by at least some embodiments is therefore that of specifying a method for the sealed and/or positively locking and/or non-positively locking connection of two components, which method, while being simple and inexpensive to implement, permits secure and reliable sealing and/or straightforward connection of the components with respect to one another. A further problem addressed by the embodiments of the invention is that of specifying a correspondingly sealed and/or positively locking and/or non-positively locking component arrangement.
Said problems are solved by means of method, a first component, which has a projection with an undercut, and a second component, which has a cavity, are provided. The cavity may for example form a sealing and/or connecting region. Furthermore, a sealing and/or connecting material, that is to say a material which has a sealing and/or connecting function, is introduced into the cavity. The sealing and/or connecting material may for example be a liquid or pasty material. For example, the material may be a sealing material for sealing with respect to gaseous and/or liquid media, for example may be silicon or acrylic. Furthermore, the material may be a connecting material for the positively locking and/or non-positively locking connection of the components, such as for example a bonding material or an adhesive. For example, the adhesive may be a curing adhesive, such as for example a chemically curing adhesive. Furthermore, the connecting material may for example be concrete or tar. The material preferably has mechanical, chemical and thermal resistances in accordance with the application. Furthermore, the sealing and/or connecting material may be a sealing and connecting material, that is to say may be formed in combination as connecting material for the positively locking and/or non-positively locking connection of the components and as sealing material.
The first component and the second component are subsequently joined together to form a component arrangement, wherein the projection of the first component projects, joined-on state, into the cavity of the second component.
Preferably, projection of the first component likewise projected into the sealing and/or connecting material. For example, the first component may be joined to the second component such that the projection is fully surrounded by the sealing and/or connecting material.
As a result of the engagement of the projection into the cavity, provision may in particular also be made for the projection to engage into the sealing and/or connecting material and to at least partially displace said material. In particular, the cavity may be fully filled with the sealing and/or connecting material at least after the joining-together of the first component and the second component.
By means of the undercut of the projection, the component arrangement exhibits a particularly firm and/or sealed connection in the joined state. For example, the projection may be of undercut form in relation to a joining axis which runs substantially parallel to an intended loading direction of the component arrangement. Here, the expression "intended loading direction" may refer to a direction in which forces act during intended use of the joined component arrangement, for example in which the greatest forces act during intended use. The joining axis may for example run orthogonally with respect to a parting plane, wherein the parting plane, at least in sections, runs tangentially with respect to an opening region of the cavity and/or with respect to a base region of the cavity and/or with respect to a surface, adjoining the projection, of the first component. Furthermore, the projection may have one or more undercut regions.
The projection may also have a first width and a second width, wherein, in the joined state, the second width is arranged closer to the base region of the cavity than the first width. The second width is preferably greater than the first width. For example, the projection or the cross-sectional area of the projection may widen or become larger in the direction of the base region of the cavity. The projection may for example widen continuously in the direction of the base region of the cavity. Alternatively, the projection may also widen only in sections in the direction of the base region of the cavity. It is furthermore possible for the projection to be inclined relative to the joining axis, such that an undercut is formed as a result of the inclination of the projection.
The cavity may also have an opening region and a base region, wherein the opening region is larger than the base region. For example, the cavity may narrow proceeding from the base region in the direction of the opening region.
The first component may also have a multiplicity of projections and the second component may also have a multiplicity of cavities and/or sealing and/or connection regions, wherein, in the joined state, at least in each case one projection projects into a cavity or a sealing and/or connecting material arranged in the cavity. It is preferable for all projections to have an undercut.
An outer wall of the cavity of the second component may be deformed during the joining-together step. The deformation of the outer wall may for example involve a bending of the outer wall. The deformation may be performed either mechanically, chemically or in some other way, and in particular before or during the joining-together of the first component and the second component.
After the deformation of the outer wall, curing of the sealing and/or connecting material may take place, in a manner dependent on the usage situation, to form an elastic or solid sealing and/or connecting element. Thus, after the curing, an elastic or solid sealing and/or connecting element may be provided which ensures a sealing action and/or a connecting action between the first component and the second component. Provision is made here whereby, as a result of the deformation of the outer wall of the cavity and the curing of the sealing and/or connecting material, a lift-off of the first component and second component from one another leads to a compression of the elastic and/or solid sealing and/or connecting element between deformed outer wall and projection. Thus, by contrast to the prior art, the elastic or solid sealing and/or connecting element is compressed, whereby the sealing and/or connecting action is intensified and, in particular, porosities caused during the application of the sealing and/or connecting means are minimized. In the prior art, it is rather the case that a lift-off of the components with respect to one another leads to a deterioration of the sealing and/or connecting action. The sealing material is advantageously a pasty or liquid sealing material which has curing characteristics. After the curing, the elastic and/or solid sealing and/or connecting element that is formed can, during the loading, be subjected both to shear and compressive loading. Thus, the sealing and/or connecting material, which exhibits low viscosity, can be applied to the first component and/or the second component, wherein an elastic or solid sealing and/or connecting element is present after the curing.
The deformation of the outer wall of the cavity may take place in particular plastically or elastically. If it is the intention for the first component and the second component to be separable from one another at a later point in time, then provision is advantageously made for the outer wall of the sealing and/or connecting region to be elastically deformed. For this purpose, a separating agent between component wall and sealing and/or connecting element may have an assisting effect depending on the usage situation. By contrast, if such separation is not intended, the outer wall of the cavity may also be plastically deformed. By means of the deformation of the outer wall, it is ensured that a movement of first component and second component with respect to one another always is generated to a compression of the elastic or solid sealing and/or connecting element between the outer walls.
The projection may be of thickening, in particular club-like form. For example, the projection may manufacture toward a free end. Alternatively, the projection may be formed into a thickening, in particular club-like form by means of a deformation step before the joining-together step or during the joining-together. It is particularly advantageously also possible for the projection to be formed into a thickening, in particular club-like form before the step of the introduction of the sealing and/or connecting material. Formation into a thickening, in particular club-like form is performed in particular by virtue of a projection with an arbitrary, in particular rectangular, cross section being deformed by application of a force using a punch. By means of the thickening form, in particular the club-like form, which within the component arrangement is fully surrounded by the sealing and/or connecting material and thus the elastic sealing element, a compression force can be applied to the elastic or solid sealing and/or connecting element at all times in the event of a lift-off of the first component from the second component. In particular, the sealing and/or connecting element may be compressible by the thickening form, in particular the club-like form, and the deformed outer wall of the cavity.
It is thus ensured that an adequate functional action is imparted by the sealing and/or connecting element at all times. This is the case even if the first component and the second component move relative to one another owing to external operating circumstances.
The at least one outer wall of the cavity is advantageously deformed during the joining-together step. Here, the deformation may advantageously be performed using a dedicated tool or using the respective other component.
The first component particularly advantageously has an opposing wall which bears against the outer wall when the first component and the second component have been joined together to form the component arrangement. Furthermore, the opposing wall leads to a deformation, in particular to a bending, of the outer wall within the component arrangement. In this way, the method is simplified because the deformation step is automatically performed together with the step of the joining-together of the first component and the second component. There is therefore no need to perform a dedicated deformation of the outer wall.
The outer wall is advantageously deformed such that a cross section of the cavity is of arcuate form. This is advantageous in particular together with the club-like form of the projection, because a club-like form and arcuate form are substantially complementary to one another. Alternatively, the cross section is conical. Thus, a movement of the first component relative to the second component always leads to a compression of the sealing and/or connecting element between deformed outer wall and club-like projection. By means of a structurally optimal configuration of the projection and of the outer wall to be deformed, the sealing and/or connecting action is intensified. In this way, the sealing and/or connecting action between the first component and the second component is adequately provided at all times owing to the elastic and/or solid sealing and/or connecting element. The inventive method according thus makes it possible to provide a component arrangement which reliably ensures an adequate sealing and/or connecting action even in the event of a relative movement of the first component with respect to the second component.
Advantageously, before the joining-together of the first component and the second component, the outer wall is deformed such that a cross section of the cavity narrows toward a root region of the projection. For this purpose, provision is made for the first component and the second component to be situated in a joined-together state. In this way, provision is in turn preferably made whereby a movement of the first component relative to the second component always leads to a compression of the sealing and/or connecting element between the deformed outer wall and the projection. A sealing and/or connecting action is thus improved.
Provision is preferably furthermore made whereby the outer wall is thickened during and/or after the step of the curing of the sealing and/or connecting means. In particular, the outer wall is thickened into a club-like form. Provision is thus made whereby the cross section of the sealing region narrows toward a root region of the projection in the joined-together state of first component and second component. In this way, it is in turn ensured that a movement of the first component relative to the second component always leads to a compression of the sealing and/or connecting element. It is thus in turn ensured that the sealing and/or connecting action is improved.
At least one of the components may also have a guide element which projects into a depression of the other component during the joining-together of the components. Lateral forces can be advantageously absorbed by means of the guide element. It is furthermore possible for both the first component and the second component to each have one or more guide elements which, in the sensed state, each project into depressions of the respective other component.
The projection of the first component may be plastically deformed during the joining-together of the components. In the embodiment in which both the first component that is to say the second component have a projection, both projections may be plastically deformed during the joining-together.
A thickening of the projection, in particular at a free end of the projection, may take place during the curing or after the curing of the sealing and/or connecting material. In particular, the thickening is of club-like form. It is thus in turn ensured that a movement of the first component relative to the second component leads to a compression of the sealing and/or connecting element.
A component arrangement is also specified. The component arrangement may for example be producible or produced by means of a method described here. The component arrangement may thus have one or more features of the abovementioned embodiments described in conjunction with the method. The features described above and below may apply equally to the method described here and to the component arrangement described here.
The component arrangement comprises a first component, which has a projection with an undercut, and a second component, which has a cavity. The first component is connected to the second component. Furthermore, the component arrangement has a sealing and/or connecting material which has cured to form a sealing and/or connecting element and which is arranged in the cavity of the second component. The projection of the first component projects into the cavity of the second component. The projection is preferably at least partially surrounded by the sealing and/or connecting material. For example, the projection may be entirely surrounded by the sealing and/or connecting material.
Both the first component and the second component may have in each case one cavity and one projection with an undercut, wherein each projection projects into the cavity of the respective other component. The two components may for example be of identical or point-symmetrical construction with regard to their surface contour.
An outer wall of the cavity may be deformed in relation to a state in which the second component is not connected to the first component. The outer wall may in particular be bent. Provision is thus preferably made for the sealing and/or connecting element to be compressible if the first component lifts off from the second component because, in this case, the sealing and/or connecting element can be clamped between the deformed outer wall and the projection. Provision is particularly advantageously made for the component arrangement to be produced in accordance with the above-described method.
The first component and/or the second component preferably have an opposing wall which bears against the outer wall. As a result of the outer wall of one component bearing against an opposing wall of the other component, the outer wall is deformed, in particular bent. If it is the intention for only one of the two components to have the outer wall, then provision is made for only that component that does not have the outer wall to comprise the opposing wall. By means of the opposing wall, a deformation of the outer wall takes place autonomously, such that the deformation of the outer wall does not have to be performed in a dedicated step. Provision is particularly advantageously made for the outer wall to be deformed such that a cross section of the cavity is arcuate or wedge-shaped. Provision is particularly advantageously also made for the projection to be of thickened, in particular club-like form at one end. Thus, the projection and the cavity are advantageously of substantially complementary form with respect to one another. This has the effect in particular that a region of the sealing and/or connecting element is always compressible between deformed outer wall and projection if a separating relative movement between the first component and the second component takes place. By means of compression of the sealing and/or connecting element, the sealing and/or connecting action of the sealing and/or connecting element is intensified, whereby an improved sealing and/or connecting action between the first component and the second component is provided in any case.
The first component and/or the second component particularly advantageously has an overflow chamber. Sealing and/or connecting material that has emerged from the cavity can enter the overflow chamber, such that the excess sealing and/or connecting material that has emerged can be captured by the overflow chamber. The overflow chamber advantageously extends around the cavity. In particular, during the manufacture of the component arrangement, provision is made for the projection to be introduced into the cavity, whereby the sealing and/or connecting material is at least partially displaced out of the cavity. This displaced sealing and/or connecting material can subsequently be captured by the overflow chamber. The sealing and/or connecting material is thus prevented from being present in an uncontrolled manner between the first component and the second component. In this way, the sealing and/or connecting action can be limited to the cavity, whereby a quantity tolerance in the provision of the quantity of the sealing and/or connecting material, and manufacturing tolerances of the two components, can be compensated. It is thus ensured that, in any case, the sealing and/or connecting material is present throughout the entire cavity. A secure and reliable sealing and/or connecting action is therefore realized.

Method for connecting two components, and component arrangement

Bayerische Motoren Werke Aktiengesellschaft


An apparatus for uniform illumination includes a light source and one diffuser shield maintained in proximity with the light source to uniformly disperse light from the light source. The diffuser shield is formed at least by an outer filter having a concave and perforated surface, and a translucent interior disk having two outer layers of transparent glass and an inner layer of white glass. The light source might be an induction lighting unit including a high frequency generator and might be associated with a supporting structure.

A surface that is uniformly illuminated, with few or no bright or dim regions throughout the area illuminated, is visually attractive. When large in size, such a surface is likely to create a lasting impression on a viewer, and can be effective as a marketing or branding tool. In addition, uniformly illuminated surfaces can be useful in other applications such as x-ray viewers, etc.
As such surfaces increase in size, a number of lighting units may be required for complete illumination thereof. In such situations, uniform illumination of the surface can be difficult to achieve. Bright and/or dim regions are often present on the surface, thus decreasing the visual attractiveness and overall intended effect.
A number of solutions to the problems associated with providing uniform illumination of a large surface have been proposed. For example, in the past, High Intensity Discharge (HID) lighting units have been placed along the top and bottom of large surfaces in order to project light onto the surface. However, such systems do not provide uniform lighting of the surface, resulting in brighter regions near the top and bottom and dimmer regions towards the centre of the surface.
In addition, various lighting units, including fluorescent lighting units and Light Emitting Diodes (LED), have been used in combination with translucent surfaces in order to uniformly illuminate the surface. However, these methods of illumination can be very expensive to employ.
Similar problems are encountered in attempting to provide uniform lighting in general indoor and outdoor lighting applications.

Diffuser shield and lighting system for uniform illumination


The present invention discloses a semiconductor device, comprising a plurality of fins located on a substrate and extending along a first direction; a plurality of gate stack structures extending along a second direction and across each of the fins; a plurality of stress layers located in the fins on both sides of the gate stack structures and having a plurality of source and drain regions therein; a plurality of channel regions located in the fins below the gate stack structures; characterized in that the stress layers have connected parts in the fins and that the channel regions enclose the connected parts.

From the 90 nm CMOS integrated circuit technique, Strain Channel Engineering with the purpose of enhancing carrier mobility of channel plays an increasingly important role with continuous reduction of a feature size of a device. Various strain technologies and new materials are used in the device process, that is, introducing a compressive stress or a tensile stress in the channel direction to thereby enhance the channel carrier mobility and improve the device performance.
For example, for 90 nm process node, compressive stress in a PMOS device is provided by using embedded SiGe (e-SiGe) source/drain or using a (100) crystal orientation substrate in combination with a tensile stress contact etch stop layer (tCESL); for 65 nm process node, the first generation source/drain stress memorization technique (SMT×1) is further adopted on the basis of the 90 nm process node, for example, a dual contact etch stop layer is used; for 45 nm process node, the second generation source/drain stress memorization technique (SMT×2) is used on the basis of the previous technique, for example, e-SiGe technique may be used in combination with a tCESL or a dual CESL, besides, Stress Proximity Technique (SPT) may be used, moreover, a (110)-plane substrate is adopted for PMOS and a (100)-plane substrate is adopted for NMOS; after 32 nm process node, the third generation source/drain stress memorization technique (SMT×3) is used, for example, embedded SiC source/drain is used on the basis of the previous techniques to enhance the tensile stress in an NMOS device.
Furthermore, in order to provide a carrier mobility in the channel region, various non-Si based materials, such as Ge, GaAs, InP, GaSb, InAs and InSb whose (electron) mobility is gradually increased, may be adopted.
On the other hand, in the existing sub-20 nm technology, three-dimensional multi-gate devices (FinFET or Tri-gate) become the main device structure, and such a structure enhances the gate control capability and is adaptable to manufacture a fine structure. Further, the stress is also needed to be increased in these three-dimensional multi-gate devices to thereby enhance the carrier mobility and to enhance the device performance. Generally, the stress is applied by a method of selectively epitaxially growing stress fins comprised of above mentioned high mobility materials or strained materials and used as both the source and drain regions and the channel regions, that is, global strained fins by taking the Si line formed by etching on a substrate isolation structure (e.g., SOI) as a substrate. Another method is to selectively epitaxially grow Si to form Si fins by taking the Si line formed by etching on a substrate isolation structure (e.g., SOI) as a substrate, then to selectively grow the above mentioned high-stress materials after removing the original part of Si fins from the source and drain regions to produce an effect of uni-axial strain.
However, in the aforementioned prior art, the technology of channel substrate global strained materials or high mobility substrate materials will cause more technical difficulties as compared with the mainstream uni-axial strain technology such as: the change of energy level, change of density of states, and change of carrier concentration due to change of substrate materials; the effect of growth defects of materials; the problem of matching with different strain requirements of CMOS device; and the problem of compatibility with the mainstream HK/MG.

Semiconductor device and method of manufacturing the same

Institute of Microelectronics, Chinese Academy of Science