A field effect transistor comprising a semiconductor substrate having a transistor trench extending downward from an upper surface of the semiconductor substrate. The trench extends to a trench depth below an upper surface of the semiconductor substrate. The transistor further includes a gate dielectric layer that is formed on a floor of the transistor trench over a channel region of the semiconductor substrate. A conductive gate structure is formed above and in contact with the gate dielectric layer. A source/drain impurity distribution is formed within a source/drain region of the semiconductor substrate. The source/drain region is laterally disposed on either side of the channel region of the semiconductor substrate. In a preferred embodiment, the trench depth is between 1,000-5,000 angstroms and a thickness of the conductive gate structure is less than 5,000 angstroms such that an upper surface of the conductive gate structure is level with or below an upper surface of the semiconductor substrate. The gate dielectric layer suitably comprises a thermal oxide having a thickness of approximately 20-200 angstroms. In a lightly doped drain (LDD) embodiment, the source/drain impurity distribution includes a lightly doped region and a heavily doped region. The lightly doped region extends laterally from the channel region of the transistor to the heavily doped region. In the preferred embodiment, a lateral dimension of the channel region of the transistor is approximately 100-300 nm.

1. Field of the Invention
This invention relates to the field of semiconductor processing and, more particularly, to a method of forming a field effect transistor having a channel length less than a minimum resolvable feature of the photolithography apparatus.
2. Description of the Relevant Art
The operating characteristics of a transistor fabricated with standard metal-oxide-semiconductor (MOS) integrated circuit techniques are a function of the transistor's dimensions. In particular, the transistor's source-to-drain current (I.sub.ds) is proportional to the ratio of the transistor's width (W) to the transistor's length (L). For a given transistor width W and a given biasing condition (e.g. V.sub.G =3V, V.sub.D =3V, and V.sub.S =0V), I.sub.ds is maximized by minimizing the transistor length L. Minimizing transistor channel length improves the speed of integrated circuits, which comprise a large number of individual transistors, because the larger drain current associated with a short channel length can drive the adjoining transistors into saturation more quickly. Minimizing L is, therefore, desirable from an device operation standpoint. In addition, minimizing the transistor length L is desirable from a manufacturing perspective because a smaller area of silicon is required to manufacture a transistor having a smaller length. By minimizing the area required for a given transistor, the number of transistors available for a given area of silicon increases and, with it, a corresponding increase in the circuit complexity that can be achieved on the given area of silicon.
The main limitation of minimum device size in a conventional transistor fabrication process is the resolution of the optical lithography printing system. In an optical lithography printing system, radiation is directed from an illumination source through a patterned mask and onto a photoresist layer. The patterned mask transmits the illumination source radiation onto selected areas of the photoresist layer to reproduce the mask pattern in the photoresist layer. Resolution in optical lithography systems is limited by diffraction effects, which spread radiation from the illumination source into regions of the photoresist which are not directly exposed to the illumination source. Because of diffraction effects, there is a minimum distance beyond which even a geometrically perfect lens cannot resolve two points. In other words, when two points are less than a minimum distance from each other, the two points cannot be resolved by the lithography system. The diffraction patterns associated with each point overlap each other to such an extent that the two points cannot be effectively differentiated. The resolution of a lens depends on the wavelength of the illumination source and the numerical aperture of the lens. Rayleigh's criterion criteria defines two images as being resolvable when the intensity between them drops to 80% of the image intensity. This criterion is satisfied when 2nd=0.61.lambda./NA, where 2d is the separation distance of the two images, .lambda. is the wavelength of the energy source, and NA is the numerical aperture of the lens.
Commercially available optical photolithography machines are typically equipped with mercury vapor lamps as the illumination source. The characteristic energy spectrum of a mercury vapor lamp contains several distinct peaks in the 300 nm to 450 nm wavelength range. These peaks are commonly referred to by their industry designations. The peak associated with a wavelength of .about.436 nm is designated the "G-line," the .about.405 nm peak the "H-line," and the .about.370 nm peak the "I-line." Photolithography aligners are similarly designated such that it is common to speak of "G-line aligners." The minimum feature size resolvable by a G-line aligner is greater than the minimum feature size of an I-line aligner because of the longer G-line wavelength.
As process technologies approach and surpass the resolvable limits of G-line and I-line aligners, semiconductor manufacturers are typically forced to implement alternative photolithography techniques to achieve adequate resolution of the minimum features. Unfortunately, the conventional alternatives involve abandoning or substantially modifying the existing photolithography equipment at a prohibitive cost. Many wafer fabrication facilities, for example, have extensive capital investment in I-line aligners. To adequately resolve features in the deep sub-micron range (i.e. <0.5 .mu.m), it is typically necessary to upgrade these aligners or abandon the optical alignment equipment entirely and replace it with advanced lithography equipment including e-beam or x-ray lithography. The cost associated with replacing or upgrading photolithography equipment can be staggering. In addition to the capital required to purchase and install the improved equipment, there are extensive costs associated with qualifying the new equipment for production worthiness and training production and maintenance personnel in the operation and care of the new equipment.
In addition, conventional transistor fabrication processes, in which the transistor gate is formed above the semiconductor substrate, result in a non-planar surface upon which subsequent processing layers must be fabricated. The non-planar surface increases the difficulty of subsequent processing. In particular, photolithography resolution is negatively affected by variations in the thickness of the photoresist layer across non-planar regions or "steps" in the underlying substrate. Photoresist line width variations are common over steps in the underlying substrate primarily due to standing wave effects and light scattering at the steps caused by diffraction and reflection effects.
Therefore, it is highly desirable to design an MOS transistor and a transistor fabrication process in which the transistor channel length is not limited by the capabilities of the photolithography equipment. It would be further desirable if such a process resulted in a substantially planar surface upon which subsequently formed structures could be more easily fabricated.

Ultra short trench transistors and process for making same


A prepack well screen assembly has a resistance welded outer screen concentrically mounted in radially spaced relation on a perforated mandrel, thereby defining an annulus in which a sintered metal prepack sleeve is loaded. The longitudinal spacing distance between adjacent turns of the outer screen selectively exclude sand fines of a predetermined minimum size. The porosity of the sintered metal prepack sleeve is selected to pass sand fines in the size range of from about 10 microns to about 150 microns. The effective inlet flow area through the sintered metal prepack sleeve is substantially greater than the effective inlet flow area through the outer screen. The sintered metal prepack screen excludes sand fines from inflowing formation fluid during the initial production phase following a gravel pack operation, without limiting production of formation fluid.

In the course of completing an oil and/or gas well, it is common practice to run a string of protective casing Into the well bore and then to run the production tubing inside the casing. At the well site,, the casing Is perforated across one or more production zones to allow production fluids to enter the casing bore. During production of the formation fluid, formation sand is also swept into the flow path. The formation sand is relatively fine sand that erodes production components in the flow path.
In some completions, the well bore is uncased, and an open face is established across the oil or gas bearing zone. Such open bore hole (uncased) arrangements are utilized, for example, in water wells, test wells and horizontal well completions.
One or more sand screens are Installed in the flow path between the production tubing and the perforated casing (cased) or the open well bore face (uncased). A packer is customarily set above the sand screen to seal off the annulus in the zone where production fluids flow into the production tubing. The annulus around the screen is packed with a relatively coarse sand or gravel which acts as a filter to reduce the amount of fine formation sand reaching the screen. A work string and service seal unit (SSU) is used to spot the gravel around the screen. During well completion, gravel is also pumped and squeezed into the producing formation around the screen for filtering unconsolidated material out of the infilling well fluid. The gravel is pumped down the work string in a slurry of water or gel and is spotted directly under the packer or above the sand screen. The gravel also fills the annulus between the sand screen and the well casing. In well installations in which the screen is suspended in an uncased open bore, the gravel pack supports the surrounding unconsolidated formation.

Sintered metal substitute for prepack screen aggregate


A method and system for a location based full text search is disclosed. The system generates interwoven bit vectors for documents that are stored in a database. The system may determine a location value based on a portion of a map that a user is viewing. The system may also receive at least one search term inputted by a user. Based on the location value and the search term, the system may generate one or more interwoven bit vectors, which may be used to query an index that identifies responsive documents stored in the database.

Full text search (FTS) systems search for relevant documents based on key words entered by a system user. The user enters a set of terms, referred to as tokens, and the FTS system retrieves documents containing all of the terms in the set. For example, Lucene (described at http://lucene.apache.org/) and SQLite's FTS module (described at http://www.sqlite.org/cvstrac/wiki?p=FtsUsage) are both FTS systems.
Often a user wants to combine FTS with a spatial search. For instance, a web-based mapping application may allow a user to zoom into a certain region of a map and then enter one or more search terms, such as "restaurant" or "hotel." The web-based mapping application may then overlay push-pin icons over the map identifying where restaurants or hotels are located in the displayed region.
Generally, there are three approaches to execute a location based full text search. First, a spatial search may be conducted to return all points of interest within a geographic area. A full text search may then be conducted on the set of returned points of interest using one or more entered search tokens. This approach may be efficient if the spatial search is somewhat selective (i.e., a relatively small geographic area). Second, a full text search may be conducted first followed by a spatial search conducted upon the returned list of full text search results. This approach may be efficient if the full text search is somewhat selective. Third, a full text search and a spatial search may be conducted in parallel and the intersection of the two result sets may constitute the result set. This approach may be efficient if both searches are rather selective.
However, when the spatial search and the full text search are both rather unselective, none of these three approaches are particularly efficient. One example in which the spatial search and the full text search are both rather unselective is if a user conducted a search for "Pizza" within Chicago, Ill. Thus, it would be beneficial to have a location based full text search system that works efficiently when the single search criteria are unselective but the combination of them is selective.


Input device configurations are described. In one or more implementations, an input device includes a connection portion, protective case, and one or more controls. The connection portion is configured to provide a removable physical connection to a computing device. The protective case is coupled to the connection portion and configured to support rotational movement of the protective case in relation to the computing device when the connection portion is physically connected to the computing device. The one or more controls are disposed on the protective case such that at least one control is accessible to a user when the protective case is positioned behind the computing device and the computing device and the input device are grasped by one or more hands of a user.

The variety of configurations of computing devices is ever increasing. For example, computing devices may be found in an ever increasing variety of form factors, such as from traditional personal computers to game consoles and mobile communications devices such as tablets, smartphones, portable game devices, and so on.
Additionally, the functionality that is made available by each of these devices is also ever increasing. For example, productivity applications such as spreadsheets and word processors have expanded from traditional personal computers to tablets, gaming applications have expanded from dedicated game consoles to mobile computing devices, and so forth. However, these different uses may encounter complications when used on computing devices having configurations that were not originally designed for those uses.


A method for deploying multiple spacecraft is disclosed. The method can be used in a situation where a first celestial body is being orbited by a second celestial body. The spacecraft are loaded onto a single spaceship that contains the multiple spacecraft and the spacecraft is launched from the second celestial body towards a third celestial body. The spacecraft are separated from each other while in route to the third celestial body. Each of the spacecraft is then subjected to the gravitational field of the third celestial body and each of the spacecraft assumes a different, independent orbit about the first celestial body. In those situations where the spacecraft are launched from Earth, the Sun can act as the first celestial body, the Earth can act as the second celestial body and the Moon can act as the third celestial body.

1. Field of the Invention
This invention relates to a method for deploying spacecraft, and more particularly, to a method for deploying multiple spacecraft.
2. Related Art
Spacecraft are launched and deployed to various locations to serve a variety of different purposes. Different techniques can be used place these spacecraft in their desired orbits. One technique that can be used is a lunar fly-by maneuver.
Salvatore et al. (U.S. Pat. No. 6,116,545) discloses a method using a lunar fly-by maneuver to transfer a satellite from a quasi-geosynchronous transfer orbit to a geosynchronous orbit. Salvatore teaches the use of three stages, including a second translunar injection at perigee to escape the final intermediate phasing orbit of the earth.
Salvatore et al. (U.S. Pat. No. 6,149,103) teaches the use of at least two lunar fly-by maneuvers to transfer a satellite from a quasi-geosynchronous transfer orbit having a high inclination to a final geosynchronous orbit having a low inclination.
Dulck (U.S. Pat. No. 5,507,454) teaches the use of gravitational assistance to place probes in heliocentric orbits in planes outside the plane of the elliptic plane.
Koppel et al. (U.S. Pat. No. 6,059,233) teaches the concept of placing two satellites on a launcher. The first satellite is placed directly by the launcher and the second satellite is placed in a lunar transfer orbit.
Uphoff (U.S. Pat. No. 5,158,249) teaches the concept of a lunar swing by maneuver and using the moon's gravitational field to achieve orbital transfers.
Meissinger et al. (U.S. Pat. No. 6,059,235) teaches a step of applying an additional velocity impulse to a spacecraft by an intermediate target to assist the spacecraft in reaching a distant target planet.
The related art generally employs lunar flyby maneuvers and lunar gravity assist to establish geosynchronous orbits for satellites. This means that the satellites eventually orbit the earth after completing a lunar flyby maneuver. While these mission designs include a lunar flyby maneuver, none of these references disclose the concept of using lunar gravity assist to deploy a constellation of spacecraft about a celestial body different than the celestial body where the spacecraft originated.

Method for deploying multiple spacecraft


A communication system for connecting a terminal through a communication channel for a communication signal and a control channel for the control signal is constructed by a decoder for decoding a dial signal such as a push button signal that is generated from the terminal, a transmitting unit for transmitting a dial signal according to an output of the decoder to an external line at the time of a current supply, a power supply unit for supplying a current to a dial signal generator provided for the terminal when the terminal is in an off-hook state, and a setting unit for setting control data for the communication system in accordance with the output of the decoder, wherein when a power failure occurs, the dial signal that is generated from the terminal is transmitted to the external line without passing through the decoder.

1. Field of the Invention
The invention relates to a communication system which can communicate even at the time of a power failure.
2. Related Background Art
Hitherto, there is a communication system in which a circuit of a single telephone is provided in an exclusive-use telephone which is connected to a main apparatus by a wire and, when a power failure occurs, such a circuit is directly connected to an external line, thereby enabling a transmission and a reception to be executed in only such an exclusive-use telephone. In case of using the above construction, the communication system can be cheaply realized as compared with a construction such that the whole system is operated by a power source for a power failure.
A dial button of the exclusive-use telephone corresponding to a power failure having therein the circuit of the single telephone needs two circuits of a signal line to scan from a CPU at the time of a current supply and a signal line to scan from a dialer (or a dialer IC) at the time of a power failure.
With respect to such two circuits of the signal lines for scanning the dial button at the time of the current supply and the power failure, it is necessary to assure an insulation state so as to prevent that the system is broken by an induction lightning from the external line. A printed circuit board and a switch part to realize such two circuits of the signal lines for scanning are expensive.

Power-failure resistant communication system


A system and method that allows a user to concurrently connect to multiple wireless networks with a single network interface card is presented. The networks may be infrastructure (“IS”) networks and ad hoc (“AH”) networks. A driver is inserted into a device's networking stack and exposes a plurality of virtual wireless network adapters, one for each network. The adapters are enabled and disabled in accordance with which network is presently activated. Packets for a network are queued when the network is not enabled. The wireless driver controls the switching of the network card. In one embodiment where multiple wireless cards are switching in and out of AH networks, the method converges the switching times for the cards in an AH network to ensure concurrent connectivity in the AH network for at least a brief time period every switching cycle of the wireless cards.

With the development and deployment of wireless networking devices such as laptop computers, personal digital assistant devices, etc. and infrastructures, consumers and businesses are increasingly being able to realize the benefits of true mobile computing, collaboration, and information exchange. No longer are business travelers required to carry an assortment of cables and search endlessly for an available data port simply to connect to a network to retrieve email messages, download files, or exchange information. No longer are companies and home consumers restrained in where they may access their networks by the location of the Ethernet jacks on the wall. Meeting participants and groups of friends may now form their own ad hoc networks without connecting cables between themselves or logging in to some preexisting network. They can log onto the network using a wireless protocol while running on battery power, thereby allowing even greater mobility.
However, while the concept of mobile computing on wireless networks is well accepted, the implementation of this concept has taken on many forms. That is, there now exists several different wireless protocol standards that are competing in the marketplace. These standards include 802.11b (also know as Wi-Fi for wireless fidelity), 802.11a (also know as Wi-Fi5), 802.11g, HomeRF, Bluetooth, Wireless 1394, HiperLAN2, UWB, ZigBee, etc. Each of these different standards has particular advantages and is being developed with particular applications and users in mind. Despite the numerous standards, devices conducting network communications over wireless links are becoming increasing popular.
Wireless links typically transmit data over radio frequency channels but may operate over other carrier frequency ranges, such as infrared. Most radio frequency ("RF") based wireless networks are designed to be able to operate in two basic modes: the infrastructure mode and the peer-to-peer or ad hoc mode.
In the infrastructure ("IS") mode, which is also sometimes referred to as the managed network mode, each wireless network node communicates with the other nodes in the network through an access point ("AP") node of the IS network. The packets directed by an IS node to another IS node carry the AP's Media Access Control ("MAC") address in the link layer header. The access point functions as a bridge, repeater, gateway, and/or firewall between wireless nodes and wired nodes of the network. The access point may apportion bandwidth of the communication channel to the wireless IS nodes to ensure the quality of the communications. In the ad hoc ("AH") mode, a wireless node communicates directly, i.e., in a peer-to-peer fashion, with other nodes within its RF range without going through an intermediate node such as the access point of the IS network. Ad hoc wireless network connections are useful when close-by users want to communicate with each other in places where no IS network exists, or when they fail to be authorized by the access point of an existing IS network.
Conventionally, there is no interaction between nodes in an infrastructure network and nodes in an ad hoc network even if they have overlapping transmission ranges. There are, however, a number of scenarios in which it is desirable for a device to be connected simultaneously to multiple wireless networks. For instance, in one scenario, employees from company A conduct a business meeting at company B with an employee of company B. Company B has an internal corporate network that supports an infrastructure wireless network. The visitors need to share electronic information such as documents, presentations, and data with their host. This can be done if the visitors can use their laptop computers to communicate wirelessly with the laptop computer of company B. For security concerns, the visitors are not allowed access to company B's internal network. Thus, the laptop computers of the visitors cannot operate as nodes of company B's infrastructure network.
Currently, multiple wireless network interface cards are used in the device to connect to multiple networks. Unfortunately, using multiple wireless network interface cards in battery operated devices is highly undesirable because of the excessive energy drain and consequent reduction of device lifetime. The computer industry has recognized this problem and has developed and is developing solutions. For example, methods have been developed to conserve battery power in devices to extend the time between battery charges. Another method, developed by the assignee of the instant application, uses a dual-mode wireless device that switches back and forth between an IS network and an AH network with the switching triggered by either polls signals transmitted by an access point of the IS network or by the controller of the dual-mode wireless device.
When multiple devices are switching between networks, it is possible that two devices switching between networks get synchronized such that when one device switches to one network, the other one switches out of the network to another network. In other words, the devices are never on the same network at the same time. If the different networks are disjoint as is normally the case with IS and AH networks or multiple AH networks, the two devices will never be able to communicate with each other on the AH network because the packets they send to each other are not buffered by any third party such as an Access point for delivery to the node when it switches back to the network

Method to enable simultaneous connections to multiple wireless networks using a single radio


A microwave oven equipped with a microwave stirrer. The oven has a magnetron for generating a microwave, a tray for rotating a foodstuff, a stirrer for uniformly dispersing the microwave into a chamber, and a driving device for simultaneously driving the tray and the stirrer. As a driving device, a motor and a gear section are provided so that the driving device drives both the tray having rollers and stirring plates for stirring the microwave. The oven stirs the microwave so that the microwave is uniformly dispersed in a chamber, thereby uniformly heating the foodstuff.

1. Field of the Invention
The present invention relates to a microwave oven, and more particularly to a microwave oven equipped with a microwave stirrer.
2. Description of the Prior Art
Generally, a microwave oven is a device for heating a foodstuff by radiating a microwave to a foodstuff. The microwave is generated by a magnetron. The magnetron generates a microwave having a frequency of about 2,450 MHz. When the microwave is radiated to the foodstuff placed in the microwave oven, the microwave stimulates molecules which constitute the foodstuff so that the molecules are rapidly vibrated, thereby generating a molecular frictional heat within the foodstuff. The microwave heats the foodstuff by using this frictional heat.
Generally, the microwave is generated by applying a high voltage to the magnetron. The high voltage is generated by a mutual induction between a first and second coils of a transformer installed at an inner bottom wall of a cabinet. By an antenna, the microwave is radiated into a chamber formed in the microwave oven.
FIG. 1 shows a conventional microwave oven 100. Microwave oven 100 comprises a cabinet 110 having an opening 105 at one side wall thereof. A door 150 is hinged at an edge portion of opening 105. Cabinet 110 is formed at an inner space thereof with a chamber 120 for receiving a foodstuff to be heated. A dish plate 140 for receiving a foodstuff thereon is mounted at a lower portion of chamber 120. Cabinet 110 is provided at an outer front surface thereof with a control panel 130 so as to adjust operating parameters such as a heating time according to a user's will.
Cabinet 11 is provided at one side wall thereof with a magnetron(not shown) for generating a microwave. An antenna(not shown) is provided at one edge portion of the magnetron, and radiates a microwave generated from the magnetron into the foodstuff in order to heat the foodstuff through a deep portion of the foodstuff.
FIG. 2 shows an inner structure of the conventional microwave oven 100. A separate space 615 is formed beneath chamber 120. A motor 630 is mounted at a lower portion of space 615. Motor 630 has a rotating shaft 635 upwardly extending to the lower portion of chamber 120 such that a rotating tray 650, which rotates above a bottom wall of chamber 120, is fixedly coupled to a free end of rotating shaft 635 by coupling 640. Consequently, when motor 630 is actuated, rotating tray 650 rotates together with rotating shaft 635. Rotating tray 650 supports dish plate 140 thereon. When dish plate 140 needs to be cleaned, dish plate 140 can be separated from rotating tray 650. For the stable rotation of rotating tray 650, a plurality of rollers 660 are mounted at a bottom wall of a circumferential portion of rotating tray 650 and are slidably supported on the bottom wall of chamber 120, thereby assisting rotating tray 650 to stably rotate.
As described above, microwave oven 100 is operated by actuating the magnetron and motor 630 in a state where a foodstuff is placed on a top surface of dish plate 140. By actuating motor 630, rotating shaft 635 begins rotation and consequently, dish plate 140 rotates together with rotating tray 650. The microwave generated by the magnetron is radiated to the foodstuff, thereby heating the foodstuff. However, in the conventional microwave oven 100, the microwave cannot be sufficiently reflected and dispersed in chamber 120 so that a dead zone, where the effect of the microwave is relatively weak, is formed in chamber 120, and as a result, the foodstuff is only partly heated. The above disadvantage is partly compensated by the rotation of dish plate 140, but it is not sufficiently solved.

Microwave oven with a turntable and mode stirrers


Disclosed are novel phenyl-alkyl-imidazoles of the formula ##STR1## or pharmaceutically acceptable salts or solvates thereof, wherein A and R, are as defined in the specification.. Also disclosed are methods of treating allergy, inflammation, hypotension, glaucoma, sleeping disorders, states of hyper and hypo motility of the gastrointestinal tract, hypo and hyperactivity of the central nervous system, Alzheimer's, schizophrenia, obesity and migraines, comprising administering an effective amount of a compound of formula I (or a salt or solvate thereof) to a patient in need of such treatment.. Also disclosed are methods for treatment of upper airway allergic responses comprising administering a compound, or salt or solvate thereof, of formula I in combination or admixture with a histamine H.sub.1 receptor antagonist.

European Patent Application No. 0 420 396 A2 (Smith Kline & French Laboratories Limited) and Howson et al., Bioorg. & Med. Chem. Letters, Vol. 2 No. 1 (1992), pp. 77-78 describe imidazole derivatives having an amidine group as H.sub.3 agonists. Van der Groot et al. (Eur. J. Med. Chem. (1992) Vol. 27, pp. 511-517) describe isothiourea analogs of histamine as potent agonists or antagonists of the histamine H.sub.3 receptor, and these isothiourea analogs of histamine overlap in part with those of the two references cited above. Clapham et al. ["Ability of Histamine H.sub.3 Receptor Antagonists to improve Cognition and to increase Acetylcholine Release in vivo in the Rat", British Assn. for Psychopharmacology, Jul. 25-28 1993, reported in J. Psychopharmacol. (Abstr. Book), A17] describe the ability of histamine H.sub.3 receptor antagonists to improve cognition and to increase release of acetylcholine in vivo in the rat. Clapham et al. ["Ability of the selective Histamine H.sub.3 Receptor Antagonist Thioperamide to improve Short-term Memory and Reversal Learning in the Rat", Brit. J. Pharm. Suppl., 1993, 110, Abstract 65P] present results showing that thioperamide can improve short-term memory and reversal learning in the rat and implicate the involvement of H.sub.3 receptors in the modulation of cognitive function. Yokoyama et al. ["Effect of thioperamide, a histamine H.sub.3 receptor antagonist, on electrically induced convulsions in mice", Eur. J. Pharmacol., vol. 234 (1993), pp. 129-133] report how thioperamide decreased the duration of each phase of convulsion and raised the electroconvulsive threshold, and go on to suggest that these and other findings support the hypothesis that the central histaminergic system is involved in the inhibition of seizures. International Patent Publication No. WO9301812-A1 (SmithKline Beecham PLC) describes the use of S-[3-(4(5)-imidazolyl)propyl]isothiourea as a histamine H.sub.3 antagonist, especially for treating cognitive disorders, e.g. Alzheimer's disease and age-related memory impairment. Schlicker et al. ["Novel histamine H.sub.3 receptor antagonists: affinities in an H.sub.3 receptor binding assay and potencies in two functional H.sub.3 receptor models"] describe a number of imidazolylalkyl compounds wherein the imidazolylalkyl group is bonded to a guanidine group, an ester group or an amide group (including thioamide and urea), and compare these to thioperamide. Leurs et al. ["The histamine H.sub.3 -receptor: A target for developing new drugs", Progr. Drug Res. (1992) vol. 39, pp. 127-165] and Lipp et al. ["Pharmacochemistry of H.sub.3 -receptors" in "The Histamine Receptor, "eds.: Schwartz and Haas, Wiley-Liss, New York (1992), pp. 57-72] review a variety of synthetic H.sub.3 receptor antagonists, and Lipp et al. (ibid.) have defined the necessary structural requirements for an H.sub.3 receptor antagonist.
WO 95/14007 claims H.sub.3 receptor antagonists of the formula ##STR2## wherein
A is selected from --O--CO--NR.sup.1 --, --O--CO--, --NR.sup.1 --CO--NR.sup.1 --, --NR.sup.1 --CO--, --NR.sup.1 --, --O--, --CO--NR.sup.1 --, --CO--O--, and --C(:NR.sup.1)--NR.sup.1 --;
the groups R.sup.1, which may be the same or different when there are two or three such groups in the molecule of formula I, are selected from hydrogen, and lower alkyl, aryl, cycloalkyl, heterocyclic and heterocycloalkyl groups, and groups of the formula --(CH.sub.2).sub.y --G, where G is selected from CO.sub.2 R.sup.3, COR.sup.3, CONR.sup.3 R.sup.4, OR.sup.3, SR.sup.3, NR.sup.3 R.sup.4, heteroaryl and phenyl, which phenyl is optionally substituted by halogen, lower alkoxy or polyhaloloweralkyl, and y is an integer from 1 to 3; PA1 R.sup.2 is selected from hydrogen and halogen atoms, and alkyl, alkenyl, alkynyl and trifluoromethyl groups, and groups of the formula OR.sup.3, SR.sup.3 and NR.sup.3 R.sup.4 ; PA1 R.sup.3 and R.sup.4 are independently selected from hydrogen, and lower alkyl and cycloalkyl groups, or R.sup.3 and R.sup.4 together with the intervening nitrogen atom can form a saturated ring containing 4 to 6 carbon atoms that can be substituted with one or two lower alkyl groups; PA1 with the proviso that, when y is 1 and G is OR.sup.3, SR.sup.3 or NR.sup.3 R.sup.4, then neither R.sup.3 nor R.sup.4 is hydrogen; PA1 the group --(CH.sub.2).sub.n --A--R.sup.1 is at the 3- or 4-position, and the group R.sup.2 is at any free position; PA1 m is an integer from 1 to 3; and PA1 n is 0 or an integer from 1 to 3; PA1 or a pharmaceutically acceptable acid addition salt thereof; PA1 or a pharmaceutically acceptable salt thereof with a base when G is CO.sub.2 H; including a tautomeric form thereof. PA1 A is --CH.sub.2 --NH--CO--NH--; --CH.sub.2 --O-CO--NH-- or --CH.sub.2 CH.sub.2 --CO--NH--(CH.sub.2).sub.m --; PA1 m is 0, 1 or 2; PA1 R is the group ##STR4## wherein at least two of R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are hydrogen and the two others are independently selected from H, halogen (e.g., Br, I, F, or Cl), CH.sub.3, CF.sub.3, OCH.sub.3, OCF.sub.3 or CN; and PA1 with the proviso, that when A is --CH.sub.2 --O--CO--NH-- and R.sup.1, R.sup.3 and R.sup.4 are all hydrogen, then R.sup.2 can not be Cl.
The compounds are useful for treating various disorders, in particular such caused by allergy-induced responses.
U.S. application Ser. No. 08/689,951 filed Aug. 16, 1996 and U.S. application Ser. No. 08/909,319 filed Aug. 14, 1997 disclose compositions for the treatment of the symptoms of allergic rhinitis using a combination of at least one histamine H.sub.1 receptor antagonist and at least one histamine H.sub.3 receptor antagonist.
In view of the art's interest in compounds which affect the H.sub.3 receptors, novel compounds having antagonist activity on H.sub.3 receptors would be a welcome contribution to the art. This invention provides just such a contribution by providing novel compounds having H.sub.3 antagonist activity.

H.sub.3 receptor ligands of the phenyl-alkyl-imidazoles type


This invention relates to a concealed-type slider. Side walls are erected on both sides of a bottom plate of a body and a top end of each side wall is bent to form a flange. A guide portion is provided by forming a down-grade slope inclined from a leading end of a shoulder opening side of the flange between the flange and the side wall. The leading end of the flange provided with this guide portion is disposed at right angle to or tilted more or less toward a rear mouth side with respect to a side face of a guide post. Consequently, when an insert pin is inserted, the guide portion guides a fastener tape smoothly and when sliding the slider in its closing direction, the sliding operation can be executed smoothly.

1. Field of the Invention
The invention relates to a slider for a concealed slide fastener. More particularly, the invention is relates to a slider for a closed product, namely, a concealed slide fastener in which an end of a fastener chain is closed with a stop and a slider for an openable product, namely, an open-type concealed slide fastener provided with a releasable bottom end stop at an end of a fastener chain.
2. Description of the Related Art
In a slider for a conventional concealed slide fastener disclosed in, for example, Japanese Utility Model Publication No. 46-6574, side wall portions 114 are erected on both sides of a bottom plate 113 and by bending a top end of each side wall portion 114 inwardly, a top piece portion 115 for guiding fastener elements is provided, as shown in FIG. 14. Then, a front end portion of the side wall portion 114 is tilted and an inner leading end of the top piece portion 115 is projected to a shoulder opening 143 side so as to provide a protrusion 151.
Further, in a slider for a conventional concealed slide fastener disclosed in, for example, Japanese Utility Model Publication No. 56-22729, side plates 214 are erected on both sides of a substrate 213 and a top end of each side plate 214 is bent inwardly so as to provide a top face plate 215 for guiding fastener elements, as shown in FIG. 15. Then, a leading end of the top face plate 215 is located on a rear mouth 244 side with respect to a leading end of the substrate 213 and a leading end portion of the side plate 214 is cut out in a U shape so as to provide an opening 252 between the top face plate 215 and the substrate 213.
In the concealed-type slider disclosed in the Japanese Utility Model Publication No. 46-6574, because the leading end of the top piece portion 115, provided by bending the top end of the side wall portion 114 inwardly, is provided with the protrusion 151 projecting to the shoulder opening 143 side of the slider, the protrusion 151 makes a sliding contact with a fastener tape attached to the fastener elements in an inverted state when sliding the slider, thereby producing a large sliding resistance, so that a smooth sliding operation cannot be attained. If the conventional concealed-type slider is used in the openable product as a releasable-type slider, when an insert pin is inserted into the slider, an end portion of the fastener tape is caught by the protrusion 151 or abuts the protrusion 151, so that a smooth insertion operation cannot be performed.
In the concealed-type slider disclosed in the Japanese Utility Model Publication No. 56-22729 also, the opening 252 is formed by cutting out the leading end of the side plate 214 in the U shape so that the leading end of the top face plate 215 is projected to a shoulder opening 243 side of the slider thereby forming a projecting portion 251. Therefore, when sliding the slider, this projecting portion 251, which projects from the side plate 214, makes a sliding contact with the fastener tape attached to the fastener elements in the inverted state, thereby increasing the sliding resistance and blocking a smooth sliding operation. Further, if this slider is employed as the releasable-type slider, when the insert pin is inserted into the slider, the end portion of the fastener tape is caught by the projecting portion 251 or abuts the projecting portion 251 thereby blocking a smooth insertion operation.
The invention has been achieved in views of the above-described problems and a main object of the invention is to provide a slider for a concealed slide fastener which, when the slider for the concealed slide fastener is employed as both of a fastener chain for a closed product and a fastener chain for an openable product, is capable of sliding smoothly between fastener tapes attached to fastener elements in an inverted state, that is, in a U shape. In a case that the slider is used in the openable product, when an insert pin of a reliable bottom stop end attached to an end portion of the fastener chain is inserted into a box after it is inserted into the slider, an end portion of the fastener tape having the insert pin is not obstructed by a flange and can be inserted smoothly under a guide by the slider.
Another object of the invention is to provide a slider for a concealed slide fastener, in which the sliding operation of the concealed slider and insertion operation of the insert pin can be executed smoothly and effectively, and when the slider is slid by a pulling operation with a pull, sliding resistance which the flange of the slider gives to the fastener chain is minimized so as to attain a smooth sliding.
Still another object of the invention is to provide a slider for a concealed slide fastener which is very similar to an ordinary slide fastener for the openable product, achieves the same easy engagement/disengagement operation as the ordinary openable product by the users and attains safety in usage, although it is the concealed slide fastener.


A camera comprises a camera body in which an opening is mounted for determining a photographing bundle of ray and for forming a photographing picture, and a patrone containing chamber is located sidewardly adjacent to the opening and is used for containing a patrone to be used for the camera. In the camera, a sprocket is located behind an imaginary plane including the opening of the camera body and is used for feeding a film, which is exposed by the photographing bundle of ray passing through the opening, toward the backside of the imaginary plane, and a spool located behind the opening and the sprocket and takes up the film, fed toward the backside by the sprocket, with a photographic-emulsion coating surface thereof being located radially inside on the spool.

1. Field of the Invention
The present invention relates to a camera and a film winding mechanism used in the camera.
2. Description of the Related Art
In the film winding mechanism used for the automatic film loading device in cameras of prior art, a patrone containing chamber and a film take-up spool are located at both sides of a photographing opening formed in a camera body, and both the chamber and the spool are arranged frontside of a film passage extending between the chamber and the spool and opposing the opening. And, the leading end of a film extending through the film passage from the patrone contained in the chamber is first loaded onto the peripheral surface of a film take-up spool by utilizing engaging pawls formed on the peripheral surface of the film take-up spool to engage with the perforations of the film or by utilizing the surface friction of the rubber mounted on the peripheral surface of the spool.
However, in such film winding mechanism of prior art the location of the patrone containing chamber and the film take-up spool makes the size of the camera body in the width direction thereof enlarge, so that a holding balance of the camera is deteriorated when a relatively long lens barrel such as for a telephoto shot is equipped with the camera. Further the leading end of film must be relatively correctly located on a specified position to perform exactly the automatic loading, which has made the film loading in a camera troublesome.

Camera and film winding mechanism thereof


A method of fabricating a semiconductor device is provided. The method includes preparing a semiconductor substrate having first and second regions, forming a mask layer pattern on the second region, growing an oxidation retarding layer on the first region and removing the mask layer pattern. The method further includes growing a silicon oxide layer on the semiconductor substrate to form gate insulating layers having different thicknesses from one another on the first and second regions.

1. Technical Field of the Invention
The present disclosure relates to a method of fabricating a semiconductor device, and more particularly, to a method of fabricating a semiconductor device having a multiple gate insulating layer.
2. Description of the Related Art
Certain products in the semiconductor industry require semiconductor devices having various properties. To accommodate these types of products, system-on-chip (SOC) technology which merges a memory and a logic circuit into one chip has been developed. For example, an MDL (merged DRAM and Logic) device in which a dynamic random access memory (DRAM) region and a logic region are merged, and an MFL (merged Flash and Logic) device in which a flash memory region and a logic region are merged, have each been developed given as typical example.
To fabricate devices having various properties, such as, different operating voltages in a single chip, gate insulating layers should be formed having various thicknesses. For example, with a MDL device, a high voltage is applied to a gate insulating layer in the DRAM region, so that the gate insulating layer should be formed relatively thick in this region, whereas, in the logic region which may require a fast operating speed, the gate insulating layer in this region should be formed relatively thin. Moreover, even with a chip composed of the same devices, the devices of this chip should still have gate insulating layers with various thicknesses so that different operating voltages may be applied thereto. For example, a negative channel metal oxide semiconductor (NMOS) region should have a thicker gate insulating layer than a positive channel metal oxide semiconductor (PMOS) region, and a peripheral region should have a thicker gate insulating layer than a cell region.
Consequently, techniques of forming dual or multiple gate insulating layers having different thicknesses on a semiconductor substrate have been developed.
For example, a method of forming a dual gate insulating layer is described in U.S. Pat. No. 6,124,175, entitled "Method of Forming Gate Oxide Layer Having Dual Thickness by Oxidation Process." According to U.S. Pat. No. 6,124,175, after growing a first gate oxide layer on a semiconductor substrate, a silicon nitride layer pattern is formed on the first gate oxide layer. The first gate oxide layer is etched using the silicon nitride layer pattern as an etching mask. Subsequently, a second gate oxide layer that is thinner than the first gate oxide layer is grown on the exposed surface of the semiconductor substrate.
However, the above-mentioned conventional method may have difficulties with respect to forming gate insulating layers having different thicknesses in, for example, three or more different regions, because in this conventional method a second gate oxide layer is grown by performing an oxidation process again after etching and removing the first gate oxide layer. Furthermore, another difficulty with the above conventional method may be that by forming a thin gate oxide layer in a PMOS region, boron implanted in a polysilicon gate may penetrate into a channel region through a gate oxide layer and cause polysilicon gate depletion and threshold voltage fluctuation.
Thus, there is a need for a method of fabricating a semiconductor device having gate insulating layers with different thicknesses formed on a semiconductor substrate using a single oxidation process. In addition, there is a need for a method of fabricating a semiconductor device which can minimize polysilicon gate depletion and threshold voltage fluctuation caused by impurities penetrating from a gate electrode to a channel region.

Method of fabricating semiconductor device having multiple gate insulating layer


Since measurement of magnetostriction is accompanied by measurement of magnetization, magnetostriction and magnetization are measured conventionally by separately prepared devices, with efforts for observing the same region of the sample. Measurement of the magnetostriction is difficult due to the difficulty of compensation and calibration. The value of magnetostriction coefficient in low temperature region cannot be correctly determined. A convenient method which can measure magnetostriction and magnetization simultaneously at the same region of the sample and at the same time is developed by combining the method of measurement of magnetostriction by X-ray diffraction and the method of measurement of magnetic X-ray diffraction. The observed X-ray diffraction intensity as a function of the magnetic field from the sample can be separated to symmetric component and asymmetric component, which contain signals proportional to the magnetostriction and magnetization, respectively.

Magnetostriction is a small deformation caused by the magnetization of magnetic substances. The deformation between dimensions at the demagnetized state of a magnetic substance and at saturation magnetization state is conversed into an amount per unit length, which is called "saturation magnetostrictive coefficient", or simply "magnetostrictive coefficient". The magnetostrictive coefficient shows different values for the easy axis magnetization and the hard axis magnetization, and also shows elongation and contraction in accordance to the magnetization. Magnetostrictive coefficient also changes its value as a function of temperature. In the fields of physics and engineering, the magnetostrictive coefficient having these characteristics is one of the basic properties unique to the substance.
Recently, magnetostriction in the field of industry, is utilized as a magnetostrictive actuator (see Japanese Patent No. 3332125 Magnetostrictive actuator for reference) or a magnetostrictive sensor utilizing the reverse effect of magnetostriction (see Japanese Patent No. 3521010 "Magnetostrictive sensor" for reference), or a magnetostrictive torque sensor (see Japanese Patent No. 3526750 "Magnetostrictive torque sensor" for reference), or a magnetostrictive stress measurement (see Japanese Patent No. 2771433 "A measurement method of magnetostrictive stress of tubes" for reference).
The magnetostrictive coefficient as a basic property unique to the substance, is generally measured by strain gauge method or capacitance method (for example, see Etienne du Trémolet de Lacheisserie Magnetostriction: theory and applications of magnetoelasticity, CRC Press, Boca Raton, 1993 for reference). This is classified as an external magnetostriction, which is an amount obtained by macroscopic observation of the deformation of a magnetic substance between dimensions at demagnetized state and at saturation magnetization state. For the measurement of the magnetostrictive coefficient in the external mode with this method, it must be noted that the confirmation that the magnetization is sufficiently approaching to the saturation is necessary.
As opposed to this, the crystallographical magnetostrictive coefficient is known. This value is not detected except by using an X-ray diffraction method or a neutron diffraction method by measuring a change in the lattice spacing. Especially, in a magnetic substance consisting of two or more kinds of elements, the magnetostriction defined as the relative change in the location of the atoms in a unit cell is called an internal magnetostriction (see above mentioned Magnetostriction: theory and applications of magnetoelasticity for reference).
Now, the macroscopic external magnetostrictive coefficient and crystallographical magnetostrictive coefficient may be different values, according to the definition. However, if the sample is a single crystal consisting of one kind of element, our interest is their values at saturation magnetization the values would show the same.
As for the method of measurement of this crystallographical magnetostrictive coefficient, the above mentioned X-ray diffraction method and neutron diffraction method are useful, but conventionally, both were poor in resolution, and could only be applied to substances that showed large magnetostrictive coefficients. Therefore, X-ray diffraction method was not applied as a practical method (see above mentioned Magnetostriction: theory and applications of magnetoelasticity for reference), and was seldom used.
FIG. 1 is a schematic diagram to explain exemplifies the relation between the angle of incidence θ and the intensity of X-ray diffraction I of a rocking curve, in which the vertical axis refers to the intensity of X-ray diffraction I and the horizontal axis refers to the angle of incidence θ. In FIG. 1, the rocking curve profile I(0, θ) at the demagnetized state is shown in a solid line, and the rocking curve profile I(H, θ) at the saturation magnetization state at magnetic field H is shown in a broken line, for a sample. In the conventional crystallographic method for measuring magnetostriction using X-ray diffraction, scanning the incident angle by a high resolution goniometer, and the Bragg angle (the angle that gives the peak point for the rocking curve profile in FIG. 1) at the demagnetized state θB(0) and the Bragg angle at the saturation magnetization state θB(H) were measured, and as shown in FIG. 1 as A, a Bragg angle shift ΔθB was calculated from the difference between the θB(0) and θB(H), which was converted into the change of the lattice spacing in order to calculate the magnetostrictive coefficient. However, the rocking curve being flat near the peak point, determining the angle of the peak point often gave uncertainty, and thus the direct measurement of the difference between these angles was not useful.
As opposed to this, in recent years, the present inventor et al. have improved the sensitivity with the X-ray diffraction method by two orders, as compared to the conventional method, and have provided a practical accuracy for the measurement on one of the typical magnetic materials. (See Arakawa, Etsuo; Nishigaitsu, Hidetaka; Mori, Koichi; Maruyama, Koh-ichi, Magnetic Science Joint Symposium 2004, 2004, 3AP22 for reference)
Specifically, the present inventor et al. have presented a method for determining the magnetostrictive coefficient with high sensitivity (Non-patent literature 3), in which the diffractometer was fixed near the intensity inflexion point (IP) of the rocking curve (see FIG. 1 for reference), while the diffraction intensity change ΔI caused by the existence or nonexistence of magnetization was measured with sufficient photon statistics, which was compared to the amount calculated by differentiation of the rocking curve, and as indicated in FIG. 1 as B, the Bragg angle shift ΔθB was calculated by the division of ΔI and I(0,θ) as will hereinafter be described, which was converted into the change of lattice spacing. The outlines of this method will be described below.
FIG. 2(a) shows a schematic diagram to explain the relative intensity change of X-ray diffraction in accordance to the strength of magnetic field H, in which the vertical axis refers to the relative intensity change δ axis, and the horizontal axis refers to the magnetic field H axis. FIG. 2(b) shows a schematic diagram to explain the relation between the strength of magnetic field H and the asymmetry component δA to the magnetic field of the above mentioned relative intensity change δ, in which the vertical axis refers to the asymmetry component δA, and the horizontal axis refers to the magnetic field H axis. FIG. 2(c) shows a schematic diagram to explain the relation between the strength of magnetic field H and the symmetry component δS to the magnetic field of the above-mentioned relative intensity change δ, in which the vertical axis refers to the symmetry component δS, and the horizontal axis refers to the magnetic field H axis. In FIG. 2(a), the solid line represents the property measured during ascending magnetic field, and the broken line represents the property measured during the descending magnetic field, and in FIGS. 2(b), 2(c), the solid line represents the property during ascending magnetic field (equivalent to the hereinafter described equation [No. 3] and equation [No. 4] respectively), and the broken line represents the corresponding property calculated during descending magnetic field (equivalent to the opposite signs of δA and H in hereinafter described equation [No. 3] and H in hereinafter described equation [No. 4], respectively). The relative intensity change δ of X-ray diffraction shown in FIG. 2(a) is expressed as follows
                    [                  No          .                                                    1                ]                                                                                δ                                      (                              H                ,                θ                            )                                =                                                    Δ                                                                                I                                                        (                                          H                      ,                      θ                                        )                                                                                I                  _                                                                  (                                      0                    ,                    θ                                    )                                                      =                                                            I                                                        (                                          H                      ,                      θ                                        )                                                  -                                                      I                    _                                                                          (                                          0                      ,                      θ                                        )                                                                                I                  _                                                                  (                                      0                    ,                    θ                                    )                                                                                where                            (        1        )                                [                  No          .                                                    2                ]                                                                                I            _                                          (                          H              ,              θ                        )                          =                                                                                I                                                  (                                      H                    ,                    θ                                    )                                                                                                                          0                      <                                                                        ⅆ                          H                                                /                                                  ⅆ                          t                                                                                +                                          I                                                                    (                                                                              -                            H                                                    ,                          θ                                                )                                                                                                                                                              ⅆ                      H                                        /                                          ⅆ                      t                                                        <                  0                                                              2                                    (        2        )            I(H, θ) is the diffraction intensity at magnetic field strength H, observed at an angle of incidence θ close to the Bragg angle. If the relative intensity change of the X-ray diffractions was measured at ascending magnetic field 0<dH/dt and at descending magnetic field dH/dt<0, the component δA asymmetry to the magnetic field shown in FIG. 2(b), and the component δS symmetry to the magnetic field shown in FIG. 2(c) are given,
                    [                  No          .                                                    3                ]                                                                                δ            A                                          (                          H              ,              θ                        )                          =                                            δ                                            (                                  H                  ,                  θ                                )                                                                                                                      0                    <                                                                  ⅆ                        H                                            /                                              ⅆ                        t                                                                                -                                      δ                                                              (                                                                        -                          H                                                ,                        θ                                            )                                                                                                                                                      ⅆ                    H                                    /                                      ⅆ                    t                                                  <                0                                              2                                    (        3        )                                [                  No          .                                                    4                ]                                                                                δ            S                                          (                          H              ,              θ                        )                          =                                                                                δ                                                  (                                      H                    ,                    θ                                    )                                                                                                                          0                      <                                                                        ⅆ                          H                                                /                                                  ⅆ                          t                                                                                +                                          δ                                                                    (                                                                              -                            H                                                    ,                          θ                                                )                                                                                                                                                              ⅆ                      H                                        /                                          ⅆ                      t                                                        <                  0                                                              2                                    (        4        )            respectively. The symmetry component δS to the magnetic field is the subtraction (δS=δ−δA) when δA is subtracted from δ. For evaluating the magnetostrictive coefficient, in the relative diffraction intensity change δ, only the symmetry component δs, to the magnetic field, was used, and the asymmetry component δA, to the magnetic field, was not used.
By combining the rocking curve profile at the demagnetized state I(0, θ) shown in a solid line in FIG. 1 with its differential coefficient dI(0, θ)/dθ, another relative diffraction intensity change D(θ) is defined.
                    [                  No          .                                                    5                ]                                                                      D                                (            θ            )                          =                              -                                                                                ⅆ                                      I                                                              (                                              0                        ,                        θ                                            )                                                                                ⅆ                θ                                              ·                                    Δθ              B                                      I                                            (                                  0                  ,                  θ                                )                                                                        (        5        )            By comparing this relative intensity change D(θ) to the symmetry component δS obtained in equation [No. 4], the difference from the Bragg angle θB at the demagnetized state, in other words, the shift ΔθB of the rocking curve (indicated in FIG. 1 as B) can be determined.
The fact that the magnetostrictive coefficient λ100, when the magnetization is oriented along one of the magnetization easy axis, neglecting the volume change, can be obtained using the shift ΔθB of the rocking curve by the following equation
                    [                  No          .                                                    6                ]                                                                                λ            100                                          (            H            )                          =                              2                                      (                              cot                                                                                θ                  B                                            )                                                  Δθ              B                                =                                                                                δ                  S                                                                  (                                      H                    ,                    θ                                    )                                                                                -                                  1                  2                                            ·                                                ⅆ                                      I                                                              (                                              0                        ,                        θ                                            )                                                                                ⅆ                  θ                                            ·                                                tan                                                                                θ                    B                                                                    I                                                        (                                          0                      ,                      θ                                        )                                                                                (        6        )            as a value with a practical accuracy at the saturation magnetization state, is a method which the present inventor et al. have made publicly known (See Arakawa, Etsuo; Nishigaitsu, Hidetaka; Mori, Koichi; Maruyama, Koh-ichi, Magnetic Science Joint Symposium 2004, 2004, 3AP22 for reference.).
This magnetostriction measured by the publicly known method, is not the average value on the whole volumes of the bulk in the sample, but a local value of the volumes near the surface where the X-ray beam irradiates and interacts while diffraction. By using this publicly known method, magnetostriction can be measured nonelectrically, noncorrecting, and noncontactually by X-rays. In the experiments, for the shift ΔθB and the magnetostriction λ100, the dependency on θ could not be detected. Thus, in the left hand side of equation [No. 6], it could simply be noted λ100(H).
Under extreme conditions such as low temperature, or high magnetic field, being under the effect of thermal contraction or thermal conduction and magnetoresistance effect peculiar to electric devices, the calibration of the devices to measure the magnetostriction may sometimes be difficult. Under such extreme condition, property measurement devices may not be able to work with its own sensitivity as it worked at room temperature (See above mentioned "Theory of High-Temperature Magnetostriction" for reference.).
For example, concerning the magnetostrictive coefficient of iron at low temperature close to 200K, there are various opinions as shown in FIG. 3 (See above mentioned Magnetostriction: theory and applications of magnetoelasticity and Magnetic Science Joint Symposium 2004, 2004, 3AP22 for reference.). Here, the vertical axis in FIG. 3 is 106×λγ,2 axis and the horizontal axis represents the sample temperature T (K). The reason for various reports to arise in the magnetostrictive coefficient of iron is the difficulty of its calibration and correction at low temperature and high magnetic field. More specifically, at the present state, even for industrially important materials such as iron, the scientific basic property which ought to be a universal value unique to a substance, is not determined precisely whether they are correctly measured or not.
For measuring the magnetostrictive coefficient, owing to definition, it is necessary to confirm these magnetization states of the sample material to be measured, that they are in the demagnetized state and saturation magnetization state. In other words, for the measurement of magnetostriction, the measurement of magnetization on the sample material is necessary.
Conventionally, it is commonly known to provide two devices for measuring magnetostriction and magnetization respectively. Therefore, one must use a device based on the principle of magnetostriction measurement, having a sensitive probe at the region of interest volume of the sample, together with a device based on the principle of magnetization measurement, having a sensitive probe at the region of interest volume of the sample and efforts were made to measure them at the same volumes of the sample. As long as two devices are used for the observation of magnetostriction and magnetization at the same volume, ultimately, there are cases in which it has to be assumed that the observations are performed at the coextensive volumes.
In many cases, this assumption that the magnetostriction and the magnetization are observed at the coextensive volumes is accepted. But the fact that the devices are different for the measurements of the magnetostriction and the magnetization, means that both devices must be prepared respectively. In addition, in cases where the principles or the sensitive volumes of the probes are different, or, where either of the measurements cannot be preferably done under a certain condition, the assumption that the observations are performed at the coextensive volumes cannot always be accepted. The conventional method is insufficient in this point.
Under extreme conditions such as low temperature, whereas such a property as the magnetostriction of iron, one of the typical magnetic substances, has not been well determined, a standard sample for calibration of devices with known features, cannot be found at the moment.
For the measurements of the magnetostriction and the magnetization, if the observations at the coextensive volumes are not accepted, since too much magnetic field strength must be applied in order to saturate the magnetization, it may be harmful on its correction.
Thus, it is clear that the development of a method which enables the measurement of the magnetostriction and the magnetization at the exact coextensive volumes, without assumption, and under any measurement conditions, is useful.

Method and device for simultaneous measurement of magnetostriction and magnetization


System and method for dividing radiological images. The method can include sending a first request to an image acquisition system to perform a first examination, sending a second request to the image acquisition system to perform a second examination, and combining the first examination and the second examination into a single acquisition procedure. The method can also include acquiring images during the single acquisition procedure, tagging each one of the images with a protocol tag, and automatically dividing the images based on the protocol tag.

When more than one radiological examination must be performed on a patient, radiologists often perform a single acquisition procedure to acquire one set of images. The radiologist must then divide the images using a virtual examination split procedure. For example, a doctor may request a chest examination and an abdomen examination. The radiologist may acquire the images for both the chest and abdomen examinations during a single acquisition procedure. This has advantages for the patient, because the patient endures less waiting time and less radiation. The hospital's workflow is also improved because the imaging equipment and examination rooms are only set up and used once. However, the radiologist must manually divide the chest images from the abdomen images by performing the virtual examination split procedure. To manually divide the images, the radiologist must view each individual image and identify the portion of the patient's body shown in the image before determining with which examination the image is associated. The images from a single acquisition procedure must be manually divided into two or more individual examinations before the radiologist or the doctor can analyze and interpret the images.
With the number of images acquired for each examination rising dramatically (e.g., over 1000 images in one examination), it is becoming more difficult to manually divide the images. Also, with new technology, the images may not be in an order that corresponds easily to the individual examinations.

GE Medical Systems Information Technologies


A method of operation of a communication system includes: estimating a channel; calculating a predicted signal within the channel; evaluating a prediction accuracy of the predicted signal; and adjusting a handoff parameter when the prediction accuracy of the predicted signal is within a threshold range for communicating through a mobile station.

Modern portable consumer and industrial electronics, such as navigation systems, cellular phones, portable digital assistants, and combination devices, are providing increasing levels of functionality to support modern life including mobile communication. As users become more empowered with the growth of mobile communication technology, new and old paradigms begin to take advantage of this new device space.
The ever increasing need for information in modern life requires users to have access to information at all times, even while moving. However, signals used in mobile communication effectively have finite transmission ranges. As a user travels, communication channels can be chosen using a handover or handoff process to account for the limited signal range and utilize a signal having high power from a base station or between multiple base stations. The failure to successfully change channels result in increased number of dropped calls and also places unnecessary strain on the resources.
However, the increased burden on the communication networks, the advances in transportation methods and the rapidly changing landscapes are all contributing to increase in handover failures. Further, the increase in demand and access speed of the information has already placed a strain on the network resources, requiring efficiency in managing such resources.
Thus, a need still remains for a communication system with adaptive handover controller. In view of the increasing consumer needs, it is increasingly critical that answers be found to these problems. In view of the ever-increasing commercial competitive pressures, along with growing consumer expectations and the diminishing opportunities for meaningful product differentiation in the marketplace, it is critical that answers be found for these problems. Additionally, the need to reduce costs, improve efficiencies and performance, and meet competitive pressures adds an even greater urgency to the critical necessity for finding answers to these problems.
Solutions to these problems have been long sought but prior developments have not taught or suggested any solutions and, thus, solutions to these problems have long eluded those skilled in the art.

Communication system with adaptive handover controller and method of operation thereof


An objective lens used in an optical head having a convex lens and a chromatic aberration correction optical element wherein there is provided a positioning means that positions the center of gravity of the objective lens used in an optical head substantially on a straight line connecting supporting points for the objective lens used in an optical head.

The present invention relates to an optical head for recording and reading information used for a compact disc (CD) device, a digital versatile disc (DVD) device and a magneto-optical disc device (MO) and to an objective lens used in the optical head, and in particular, to those capable of being applied to the aforementioned devices wherein a light source is a blue laser.
The optical head has an objective lens which forms an image of a laser beam on an information recording surface of an optical disk such as CD, DVD and MO as a spot and has a driving means which drives the objective lens for tracking and focusing.
In JP-A No. 5-210860, it is proposed that a position of the center of gravity of an optical head is made to agree positionally with a position of a driving point for the optical head for preventing resonance of the optical head caused in the course of tracking or focusing.
Further, in the objective lens, chromatic aberration is caused by wavelength changes resulted from output changes or temperature changes of a semiconductor laser representing a light source or is caused by changes of refractive index resulted from lens temperatures, however, the chromatic aberration cannot be corrected by the aforesaid one or two convex lenses. Therefore, correction of chromatic aberration conducted by the use of a diffracting lens is proposed in, for example, JP-A No. 6-82725, JP-A No. 6-242373, JP-A No. 7-294707, JP-A No. 11-95145, JP-A No. 11-337818, JP-A No. 2000-81566 and JP-A No. 2002-298422.
Since the objective lens having optical elements for correcting chromatic aberration is composed of a plurality of optical elements, the center of gravity thereof is in a position which is different from that of the center of gravity of the objective lens composed of one optical element. Therefore, if an objective lens having plural optical elements is mounted on a supporting frame of the optical head in the same way as in the conventional objective lens having one optical element, it results in that the objective lens is supported at the position deviated from the center of gravity of the objective lens.
Though the center of gravity of a movable portion in an optical head including an objective lens is made to agree positionally with a driving point, in JP-A No. 5-210860, there still is a problem that movements of the movable portion become complicated to cause a tilt and prevention of vibration becomes difficult, even when the center of gravity of the entire movable portion is made to agree with its driving point, if the center of gravity of the objective lens is deviated from its supporting point, which has been a problem.
In FIG. 12 of JP-A No. 5-210860, there is described an optical head wherein an objective lens is arranged at the position that is away from the driving point of a movable portion including an objective lens, and in FIG. 14, there is described an optical head wherein an objective lens is arranged on a line connecting driving points substantially. However, there is a possibility that the problems mentioned above are still caused on both optical heads described in FIG. 12 and FIG. 14 in JP-A No. 5-210860.

Optical head for recording and reading information and objective lens for use therein


A multiport memory having an array of storage cells for storing data; a plurality of data access ports; and access control circuitry to assign each data access port to one of the sets of access control lines and corresponding data lines. The control circuitry has collision detection circuitry to detect a colliding data access request received at a second data access port that requests access to a row of storage cells currently being accessed by a data access request received at a first data access port. The control circuitry is responsive to the detected collision to assign the set of access control lines and corresponding data lines currently assigned to the first data access port to the second data access port and to subsequently assign the first data access port to the set of access control lines and corresponding data lines previously assigned to the second access port.

Memories for storing data to be accessed by processors are known. Memories that are accessible by multiple processors are a convenient way of both storing data and passing data between the processors. In order for different processors to be able to access the same memory at the same time, memories with dual ports have been designed. These memories have two pairs of bit lines and two word lines for each bit cell, each port controlling a respective word line and pair of bit lines. Thus, a memory access at one port will activate one of the two word lines and this will cause the bit cells on that row to connect to the pair of bit lines associated with that port. A memory access to the other port will activate the other word line which will connect the other pair of bit lines to the bit cells on that row. In this way where different rows are accessed at a same time data from bit cells on the same column can be accessed via the respective bit lines.
Where different processors are accessing the same memory their clocks may not be aligned with each other and thus, the data accesses to the different ports may occur asynchronously. Whilst the use of multiport, for example dual port memories, may in many circumstances be advantageous they do give rise to certain difficulties.
Memory access collisions may occur if the same row is accessed from two ports at the same time. The processor logic will generally not allow the same cells to be accessed at the same time if one of the accesses is a write, however, different cells in the same row may be accessed and as access is controlled by the word line, both of the word lines to the one row may be turned on at the same time which will connect both sets of bit lines to the bit cells of that row. This means that if for example, one of the data accesses is a write, the value driven on the bit lines associated with that port will need to flip a bit cell which is also connected to another set of bit lines that are initially charged and thus, the parasitic capacitance of these bit lines will need to be overcome. This can cause a write failure.
US20009/0129194 assigned to ARM Limited of Cambridge UK, the entire contents of which are hereby incorporated by reference, discloses a multiport memory that provides control circuitry and override circuitry to identify read or write collisions and in response to detecting a collision actively drives both sets of bit lines with the value to be written thereby reducing the probability of a write failure occurring in response to a collision.

Handling collisions between accesses in multiport memories


A heat exchanger apparatus includes a pair of tank units for containing a fluid, such as an engine coolant, or freon, each including a header having a plurality of slots for receiving a plurality of parallel fluid flow tubes in fluid communication between the tanks. Air centers are connected between the parallel fluid flow tubes for directing an inlet air stream of the vehicle. Side plates are secured between the ends of the headers to protect and provide rigidity to the heat exchanger. Interlocking members are provided between the headers and sideplates for interlocking same to one another during the brazing process.

Heat exchangers, such as coolant radiators and condensers utilized in automotive vehicles, generally include a pair of tanks for containing cooling fluid. The tanks are formed with headers having slots therethrough for receiving fluid tubes or tube passes for directing the cooling fluid between the parallel tanks. Air centers are connected between the parallel tube passes for directing air through the heat exchanger. The air cools the fluid within the heat exchanger passing through the air passes.
The U.S. Pat. No. 3,310,869, issued Mar. 28, 1967 in the name of Porte et al. discloses a method of making radiators having a core section between two parallel fluid tanks. Sideplates are formed abutting the tanks between the end plates of the tanks to enclose the sides of the core between the tanks and sideplates.
The U.S. Pat. No. 5,009,262, issued Apr. 23, 1991 in the name of Halstead et al. discloses a combination radiator and condenser apparatus for a vehicle having extruded tank and header assemblies interconnected by the parallel tube passes and air centers.

Heat exchanger sideplate interlocked with header


The invention relates to a contact pin having longitudinal surfaces bulged to define opposite contact lines extending in longitudinal direction of the contact pin, wherein in cross section of the contact pin the plane through the two opposite contact lines is offset from the cross sectional center of the contact pin.

With the increasing signalling speed required by present-day systems signals transmitted over a conductor become more and more sensitive to coupling and/or cross talk with neighbouring conductors. Such coupling and/or cross talk interaction between conductors is sensitive to the distance between the conductors. Thus, in order to accurately assess and/or control the amount and/or effect of such interaction on a particular conductor at one or more signal frequencies, the relative positions of the conductors are important.
The geometry of the conductors and their relative position also impacts the impedance of the system and the electric field. To optimize impedance, this impact should be minimized.
Furthermore, since there are continuing desires for miniaturization there is a need to provide connector designs which allow a compact build. Further concerns are cost reduction for materials and manufacturing.

Contact pin, header connector and connector assembly


A vent assembly for attachment to a fluid discharge conduit of the type connected to a clothes dryer, room exhaust fan, or the like is adapted to reduce or prevent the trapping of dirt or lint as well as flapping or vibration of the door in windy conditions. A mount having an opening is received on the conduit and a door is pivotally received by the mount. The door is operable for displacement with respect to the opening between an open position and a closed position when engaged by a fluid, such as air from a clothes dryer, flowing through the discharge conduit. A hood is pivotally mounted over the door and mount opening, and is operable for displacement with respect to the mount when engaged by the door and/or by fluid flowing through the discharge conduit.

The exhaust from a clothes dryer, a bathroom fan, a kitchen fan or similar device is typically routed to the outside atmosphere by means of some type of conduit and vent. The exit location from the corresponding structure is typically an outside wall of the structure. The conduit is secured to an exhaust conduit of the clothes dryer, bathroom fan, or kitchen fan and then routed to the exit location. At the exit location a flow opening or passageway is created in the structure wall and a suitable vent is mounted into, onto, or across the exit flow opening. In order to substantially prevent the inflow or backflow of outside air, as well as to prevent the entry of moisture which may result from rain or snow, conventional exhaust vents may be covered with a hood and may include a one-way or hinged flapper or a series of hinged louvers secured within a surrounding frame.
One of the problems with conventional vents, such as louvers or flappers, is that external vent hoods and even the conduit itself open out into the atmosphere and create a protected, warm location for birds and small animals to nest. The building of a nest in this area can prevent the conduit, flappers or louvers from freely opening in response to exiting exhaust air from the clothes dryer or similar device. Such an obstruction caused by the nest and/or birds or animals may interfere with the operation of the clothes dryer, cause damage to the clothes dryer, and could even create a risk of fire. Additionally, conventional clothes dryers may not provide any heat when such an obstruction causes limited or diminished air flow to the dryer. Even if the flapper or louvers are operable, an open and unguarded conduit provides an entrance path into the structure for birds and small animals. Moreover, birds and small animals are often able to open the flappers or louvers to gain entry into the conduit.
Some conventional systems utilize grid-like guards to cover either the conduit opening or hood opening to prevent entry of birds and small animals. However, these conventional grid-like guard systems require constant monitoring to prevent build up of lint exiting the clothes dryer through the conduit, and require frequent and repeated cleanings to clear the passageways. If the screen or grid is not cleaned or cleared, the blockage of air flow may interfere with the operation of the clothes dryer or other device. Additionally, conventional systems also experience issues with chattering or vibration from vents during operation. Further, conventional systems equipped with relatively large, fixed hoods are generally unsightly, may entrap lint or other debris within the hood due to turbulence in the air or fluid flow within the hood, and may provide attractive space for hornet and wasp nests and the like. Also, fixed hood vents having pivoting vent doors may also encounter annoying and noisy flapping of the door within the hood in windy conditions even when there is no air flow through the conduit. This flapping can also create the opportunity for nesting and/or entry of birds or animals in the fluid conduit.
Therefore, there is a need for an improvement to existing dryer exhaust vent design so that birds and small animals or insects cannot nest inside the hood or gain access to the area adjacent to the vent flapper or vent louvers around the conduit.
There is a further need for unrestricted, free flow of exhaust from the clothes dryer while still providing a suitable barrier to the entry of birds and small animals without requiring frequent repeated inspection and maintenance to ensure unrestricted free flow of exhaust.

Low profile animal restricting vent for fluid discharge conduits