The in vivo synthesis of connective tissue by fibroblast or fibroblast precursor cells ensconced within a biocompatible scaffold is disclosed. The cells are preferably present in a biocompatible scaffold such as gelatin and placed between two other biocompatible scaffolds such as collagen sponges soaked with a collagenic amount of a member of the TGF-β family of proteins. This composition is then implanted in a host to produce cranial sutures, periodontal ligament or other fibrous tissue structures in vivo.

Fibrous tissue consists of fibroblastic cells embedded in a hydrated extracellular matrix [Mow et al., Basic Orthopaedic Biomechanics, New York, Raven Press, 143-199 (1991)]. Fibroblasts are crucial to fibrous tissue histogenesis and maintenance [Hunziker (2000) Osteoarth. Cartil., 10:432-463]. Mature fibrous tissue only has a limited number of resident fibroblasts [Volk et al., (1999) Bone Miner. Res., 14:483-486].
There is overwhelming evidence that adult bone marrow contains mesenchymal stem cells (MSCs) that can differentiate into virtually all lineages of connective tissue cells such as osteogenic cells, chondrogenic cells, tenocytes, adipogenic cells, odontoblastic cells, etc. [Goldberg et al. (1994) Orthopedics, 17:819-821]. The MSCs' role in wound healing involves multiple phenotypic switches between fibrous, hyaline cartilage, fibro-cartilage, and bone [Einhorn (1998) Clin. Orthop., 355 Suppl., S7-S21]. The techniques of harvesting and culturing MSCs from bone marrow as well as inducing MSCs to differentiate into chondrogenic and osteogenic cell lineages in vitro and in vivo have been successful. [Alhadlaq et al. (2003) Ann. Biomed. Eng. 32(7): 911-923].
Cranial sutures are the soft connective tissues located between mineralized calvarial bones in the skull. These structures share the common feature of interosteal linkage; i.e., these fibrous tissues link bone to bone.
Cranial sutures permit the expansive growth of the brain and calvarial bones of the skull during childhood and adolescence [Enlow, (1999) In: Cohen M M Jr., MacLean R E (Eds.) Craniosynostosis: Diagnosis Evaluation and Management, New York: Raven Press. 131-156; and Mao (2002) J. Dent. Res., 81:810-816]. Cranial sutures are comprised of fibroblast-like cells derived from the neural crest [Pritchard et al (1956) J Anat 90:73-86]. Theses cells lie within a vascularization-rich matrix that is sandwiched between osteoblast-lined bone formation fronts [Opperman, (2000) Dev. Dyn., 219:472-485].
Craniosynostosis is the premature ossification and mineralization of sutures before cranial, facial, and brain growth is completed [Cohen (2000) In: Cohen M M Jr. (Ed.) Craniosynostosis: Diagnosis Evaluation and Management New York, Raven Press 81-103]. This congenital disorder arises in approximately one of every 2,500 live human births (Cohen, Ibid.). Craniosynostosis can manifest as visible craniofacial disfigurations and grossly elevated intracranial pressure leading to severe neurological disorders such as mental retardation, blindness, and seizures (Cohen, Ibid.).
At the present time, craniofacial surgery is the only alternative for correcting visible craniofacial disfigurations and relieving abnormally high intracranial pressure [Marsh (2000) In: Cohen and MacLean (Eds), Craniosynostosis: Diagnosis Evaluation and Management, Oxford University Press, New York, 292-308; Posnick, (2000) In: Cohen and MacLean (Eds), Craniosynostosis: Diagnosis Evaluation and Management, Oxford University Press, New York 269-291; and Tessier (2000) In: Cohen and MacLean (Eds Craniosynostosis: Diagnosis Evaluation and Management. Oxford University Press, New York, 228-268]. Surgeons typically perform craniotomy surgery in early childhood by physically dissecting the fused sutures in the skull and creating gaps of empirical sizes between involved calvarial bones with the hope that the surgically created gaps may accommodate all remaining brain growth and calvarial bone growth in the child (Marsh, 2000, Ibid.; and Tessier, 2000, Ibid.).
Due to the unpredictability of craniofacial growth from the time of the first surgical correction during infancy until growth completion during adolescence, surgically created gaps often re-synostose. Therefore, multiple additional surgeries may be needed to correct the re-synostosis. This problem occurs because the synostosed suture with missing fibrous interface was replaced by a surgically created gap still lacking sustainable fibrous component (Marsh, 2000, Ibid.; and Tessier, 2000, Ibid.).
Previous attempts at cranial suture transplantation have not been successful. For example, although surgical replacement of synostosed rabbit suture with an allogeneic suture graft including dura mater from the wild type rabbit permits post-operative sutural growth [Mooney et al. (2001) Cleft Palate Craniofac. J., 38:206-225]. However, this allogeneic suture transplantation approach necessitates creation of secondary bony defects, questionable donor availability and potential immune rejection when human applications are considered. Another effort to heal a surgically created defect involving the rat sagittal suture and adjacent bone by e-PEFE membrane with ruminants of suture-like structures [Marda et al. (2002) J. Craniofac. Surg., 13:453-462] suffered because it is believed that the observed suture-like structure in the defect originated from the remaining portion of the host sagittal suture. Lastly, although mechanical and chemical disturbances of surgically created calvarial defects involving at least one cranial suture lead to incomplete healing [Moss (1954) Am. J. Anat., 94:333-361] it does not appear to be a clinically applicable model because the surgically created bony gap in craniosynostosis patients should ideally be healed by the completion of craniofacial growth. As discussed hereinafter, the present invention can overcome many of these problems and can improve upon previous efforts of suture transplantation and delaying the rate of suture synostosis.

The Trustees of Columbia University in the City of New York


The present invention relates to a process for injection of refrigerated suspended particles into food products and the products resulting from such process. The present invention applies to the food industry in the field of meat products, and reveals those characteristics which are relevant for the process of preparation of said meat products suspension, to be later aggregated on larger sized meat products, as well as those characteristics which are relevant for said injection process. The main object of the present invention is to increase the final product green weight without incurring loss of flavor, shortening of shelf life, nutritional value or texture, making feasible the incorporation of smaller size pieces to a product featuring a higher commercial value. The term meat products is herein used meaning those products extracted from poultry, fish, cattle, pork, sheep, etc., both with and without fat, either in the shape of meat cut or shred, ground meat, frozen meat, semi-frozen meat or refrigerated meat.

The present invention relates to a process for injection of refrigerated suspended particles into food products and the products resulting from such process. The present invention applies to the food industry in the field of meat products, and reveals those characteristics which are relevant for the process of preparation of said meat products suspension, to be later aggregated on larger sized meat products, as well as those characteristics which are relevant for said injection process.
The main object of the present invention is to increase the final product green weight without incurring loss of flavor, shortening of shelf life, nutritional value or texture, making feasible the incorporation of smaller size pieces to a product featuring a higher commercial value.
The term meat products is herein used meaning those products extracted from poultry, fish, cattle, pork, sheep, etc., both with and without fat, either in the shape of meat cut or shred, ground meat, frozen meat, semi-frozen meat or refrigerated meat.
The state of the art regarding the present invention can be established with the aid of several documents, among them U.S. Pat. No. 4,960,599 granted to Cozzini et al., which is herein incorporated by reference.
The systems for preparation of the suspension and for its injection in the meat products of the current state of the art may be described based on five main components:
A) Mixing silo;
B) Forced feeding reduction mill;
C) Suspension storage silo;
D) Return silo; and
E) Injection head.
Referring to FIG. 1, the function of the mixing silo (A) is to store and refrigerate the mix of brine and meat. When it reaches a temperature between −4.5° C. and −9° C., said mixture is carried to the forced feeding reduction mill (B), where it is transformed into the suspension (which is a mixture that integrates one or more liquid or oil phases with at least one solid phase). Then said suspension is carried to the suspension storage silo (C), where a heat exchanger (D) for continuous refrigeration keeps the resulting suspension temperature below 0° C. After that, the suspension is transferred, with the aid of a centrifugal pump (P), to the injection head (E), equipped with a set of injection needles (F). A conveyor (G) conveys the meat products of commercial dimensions to the injection head (E). The injection process itself takes place when a commercial dimension meat product, laid under said injection head (E), is penetrated by its set of injection needles (F). Said needles inject the suspension in multiple points of the meat product. The excess suspension generated on the injection operation is collected in the return silo (H) and sent, with the aid of a lobe pump (not shown) back to the mixing silo (A), closing the cycle.
The current state of the art presents some inconveniences.
The suspension storage silo (C) of the current state of the art systems features a single pump (P), which prevents the use of multiple injectors or injectors with multiple heads, therefore limiting the system's productivity.
Furthermore, the different values of friction and viscosity of the suspension components (meat, brine and optional additives) associated with the mechanical characteristics of the injection process cause the excess suspension collected below the injection head (E) and stored in the return silo (H) to present a different proportion between the component elements of the suspension than the suspension contained in the suspension storage silo. Usually said excess suspension presents a higher meat content than the one originally set by the forced feeding reduction mill (B) placed between the mixing silo (A) and the suspension storage silo (C). In the current state of the art systems, the return of the excess suspension from the injector to the mixing silo causes a change in the delicate balance between the suspension components, i.e. a disproportion between the brine and meat products. Said change of suspension balance in turn tends to cause a progressive yield loss in the injection process.
Another inconvenience is that the current state of the art injection systems do not allow a precise and consistent control of the injection pressure. Said injection pressure control is critical for the system's performance. If the injection pressure is too low, the suspension does not penetrate between the fibers of the meat product to be injected, thus keeping the meat product from admitting the suspension quantity originally intended for it. If the injection pressure is too high, the injection damages the meat product (sometimes even turning it to shreds) and also prevents the adequate control of the quantity of suspension aggregated to the meat product.

Process for injection of particles in food


The present invention relates to golf balls having a cover and a core and to golf balls having a cover, a core, and an intermediate layer between the cover and the core, where the core or at least one of the intermediate layer or the core is formed from at least one terpolymer of a first monomeric component of an olefinic monomer having from about 2 to about 8 carbon atoms, a second monomeric component of an unsaturated acrylate class ester having from about 2 to about 18 carbon atoms, and a third monomeric component of at least one monomer selected from the group consisting of carbon monoxide, anhydride monomers, and monomers having a structure according to the formula ##STR1## where R.sub.1 is hydrogen or a linear chain or branched chain alkyl group of from about 1 to about 18 carbon atoms, and R.sub.2 is selected from the group consisting of linear chain alkyl, branched chain alkyl, carbocyclic, and unsubstituted aryl groups, each containing an epoxy moiety. The intermediate layer and/or core may also comprises a blend of at least one olefinic ionomer and the terpolymer.

Three-piece, wound golf balls with balata covers are preferred by most expert golfers. These balls provide a combination of distance, high spin rate, and control that is not available with other types of golf balls. However, balata is easily damaged in normal play, and, thus, lacks the durability required by the average golfer.
In contrast, amateur golfers typically prefer a solid, two-piece ball with an ionomer cover, which provides a combination of distance and durability. Because of the hard ionomer cover, these balls are almost impossible to cut, but also have a very hard "feel", which many golfers find unacceptable, and a lower spin rate, making such balls more difficult to draw or fade. The differences in the spin rate can be attributed to the differences in the composition and construction of both the cover and the core.
Many attempts have been made to produce a golf ball with the control and feel of a wound balata ball and the durability of a solid, two-piece ball, but none have succeeded totally. For example, cover compositions made with low flexural modulus ionomer resins provide improved spin and feel characteristics, but have a relatively low initial velocity that results in a shorter overall distance.
Golf balls having a non-wound intermediate layer between the cover and the core have also been disclosed. For example, U.S. Pat. No. 5,253,871 to Viollaz discloses the use of at least 10 percent of a block copoly(amide-ether) elastomer, optionally blended with an ionomer, for use as the middle layer of a three-layer golf ball. The hardness of the block copolymer is said to be within the range of 30-40 Shore D hardness, while the corresponding hardness of the ionomer component is said to be between 55-65 Shore D. The overall hardness of the middle layer is said to range from 20-50 Shore D. The cover may also be a block copoly(amide-ether) and ionomer blend but its overall hardness must be greater than that of the adjacent middle layer.
Consequently, a need exists for a golf ball composition that provides spin rates and a feel more closely approximating those of balata covered balls, while also providing the distance of an ionomer covered two-piece ball and a degree of durability as high or higher than that provided by the balls presently available or disclosed in the prior art.


An sole includes a soft-elastic lower layer (2) of an atoxic and organically compatible material, a flexible cover layer (1), e.g. naturally tanned leather, and knobs (5) made of elastically deformable material, the knobs being arranged in groups on the sole surface, their location being selected according to the aspects of reflex zone therapy, and the knobs being fixed in the lower soft-elastic layer.

The present invention relates to an inlay sole comprising a soft-elastic lower layer, a flexible cover layer, and separable knobs. Of U.S. Pat. No. 4,047,310 a sandal with an orthopaedically formed bending-resistant sole is known, a relatively thick soft-elastic layer of rubber or plastic being glued to its upper side. In this upper layer a large number of pegs, arranged uniformly in rows over the entire sole surface, is permanently embedded, its upper rounded ends protruding from this layer and exerting a massaging effect on the foot sole and/or on certain sole areas. The pegs consist of a hard plastic material and support themselves by a conically enlarged foot on the bending-resistance running sole.
In another sandal known a great number of pressure elements are pressed from above into the recesses, formed in a pregiven pattern on the entire surface of the insole or footbed sole, in order to reach acupressure effects. The knob-like pressure elements have a cylindrical or locally thickened shaft and an enlarged flat head with rounded surface. The pressure elements having a punctual acupressure effect may result in an individual influence on the nerves ending in the foot sole and/or they may be arranged in reflex zones corresponding to the foot sole's division. A basic disadvantage of these known shoe embodiments consists in that the acupressure effect is restricted to a certain shoe and the desired stimulation effect reduces after about two hours of wearing, thus requiring the shoes to be changed several times a day. Due to the insufficient anchoring possibility of its shafts, the exchangeable pressure elements cannot be used for stylish shoes, in particular ladies' shoes, having thin running soles. DE-OS 35 20 956 describes a reflex inlay sole in which a great number of pins is arranged uniformly and at larger distances in the sole, protruding over the sole's upper side for stimulation of certain reflex points on the foot sole of the wearer. The inlay sole consists of a lower layer of a pressure-elastic deformable material and of an upper tissue layer, having a large number of penetration openings for, the rigid pins made e.g. of wood. The wooden pins have a disk-like enlarged foot, which serves as a support on the elastic layer and sinks into this layer when pressure is applied. The two flexible layers are only interconnected at their outer edge by a seam, such that relative displacements of the two layers resulting from rolling on the foot during walking may lead to a tilting of the rigid wooden pins, resulting in painful pressure points.
The present invention is therefore based upon the task to improve an inlay sole of the known kind in such a way that an easy fixing and/or changing of the knobs in the desired zones is guaranteed over a long period of time and that the perfect function of the inlay sole with knobs is also guaranteed over a long period of time.
This object is solved by the features of the present invention.
Due to the fact that the enlarged foot of the knobs is fit into a corresponding recess in the lower layer and that the knobs have an enlarged head with rounded upper side, its diameter being slightly larger than the hole diameter, supporting itself with its edge on the flexible cover layer, it is possible to perform the insertion and/or removal of the knobs easily and quickly and a secure fixation of the knobs over a very long period of time is guaranteed.


A squeeze bottle dispenser includes a squeezable container, a cap with a tubular nipple defining a central passage, and an extensible dispensing tube extending from the interior of the container through the passage, the tube having an outer end terminating in a dispensing orifice. The tube is movable between retracted and extended positions, and it is spring-biased toward its extended position when it is in its retracted position. A removable closure is sealingly engageable with both the outer end of the tube and the nipple, so as to seal both the passage and the dispensing orifice when the tube is in its retracted position, and the dispensing orifice separately when the tube is in its extended position. When the tube is in its retracted position, its inner end is pushed against an internal surface of the container, thereby causing it to bow. It is retained in this bowed configuration by the simultaneous engagement of the closure with both the outer end of the tube and the nipple. The bowing of the resilient tube causes it to store potential energy much as a spring, so that, when the closure is disengaged from the nipple, the tube straightens out, causing its outer end to be pushed further out of the passage. The closure, still engaged with the outer end of the tube, is used to pull the tube to its extended position.

The present invention relates generally to the field of containers for dispensing liquids, of the type commonly known as "squeeze bottles". More particularly, this invention relates to improvements in squeeze bottles having extensible dispensing tubes.
Squeeze bottles are very well known and come in a variety of configurations for many different applications. One particular type of squeeze bottle has become quite popular for dispensing lubricating oils and the like. This type of squeeze bottle has a cap or top, preferably removable, with a central aperture. A long, hollow, flexible dispensing tube is retained in the bottle with just its outer end portion normally exposed through the aperture. When it is desired to dispense the contents of the bottle, the tube is extended through the aperture to form an elongate, flexible dispensing conduit, thereby allowing the contents of the bottle to be dispensed into small orifices and relatively inaccessible places. Typically, a small, removable closure is provided for sealing the outer end of the tube when the bottle is not in use. Examples of squeeze bottles of this general type are disclosed in U.S. Pat. No. 5,388,712; U.S. Pat. No. 4,925,128; and U.S. Design Pat. No. Des. 200,364.
In the typical prior art squeeze bottle, the closure sealingly engages only the outer end portion of the dispensing tube. This sometimes results in the closure being inadequately secured to the bottle. Also, in the typical prior art squeeze bottle, the act of extending the dispensing tube may require some dexterity and effort, in that its exposed outer end must be firmly grasped and the tube pulled out against the frictional forces imposed by the material surrounding the cap aperture.
It would therefore be an advancement in the state of the art in the field of extensible-tube squeeze bottles to have a closure that provides a secure sealing relationship with both the tube and the cap, and to have an extensible dispensing tube that is more easily extensible than has heretofore been possible.

Squeeze bottle dispenser with improved closure and spring-action extensible dispensing tube


A process for the preparation of toner compositions which comprises generating an aqueous dispersion of toner fines, ionic surfactant and nonionic surfactant, adding thereto a counterionic surfactant with a polarity opposite to that of said ionic surfactant, homogenizing and stirring said mixture, and heating to provide for coalescence of said toner fine particles.

The present invention is generally directed to toner processes, and more specifically, to coalescence processes for the preparation of toner compositions. In embodiments, the present invention is directed to the economical preparation of toners without the utilization of the known pulverization and/or classification methods, and wherein toners with an average volume diameter of from about 1 to about 25, and preferably from 3 to about 14 microns, and narrow GSD characteristics can be obtained. The resulting toners can be selected for known electrophotographic imaging and printing processes, including color processes, and lighography. In embodiments, the present invention is directed to in situ processes for recycling toner fines, that is, for example, the use of classified toner materials obtained from conventional process, like melt blending, wherein the average particle volume diameter of the toner particles is from about 0.01 and preferably to about 7 microns. In one embodiment, the present invention is directed to in situ processes for preparing toners by first dispersing toner fines in an aqueous solution containing an ionic surfactant and nonionic surfactant by utilizing, for example, a high shearing device, such as a Branson 750 Ultrasonifyer or Brinkman Polytron, adding thereto a counterionic surfactant with a polarity opposite to that of the ionic aqueous surfactant resulting in a flocculation or heterocoagulation, and shearing the mixture thereafter for an effective period of time of, for example, from about 1 minute to about 10 minutes, followed by stirring for an induction period of from, for example, about 5 minutes to about 3 days and heating the mixture above the glass transition temperature, such as from about 10.degree. C. to about 50.degree. C. above the glass transition temperature of the resin, to cause coalescence of the toner fine particles and provide toner particles of, for example, from about 7 microns to about 21 microns in average volume diameter. In another embodiment thereof, the present invention is directed to an in situ process comprised of first dispersing fine toner particles of average volume diameter of from about 1 micron to about 5 microns, and comprised of, for example, a pigment such as carbon black, HELIOGEN BLUE.TM. or HOSTAPERM PINK.TM. of from about 2 to about 10 percent by weight of toner, a resin such as styrene butadiene or styrene methacrylate of from about 70 to about 97 percent by weight of the toner and optional charge control agent of from about 0.1 to about 3 percent by weight of the toner in an aqueous mixture containing a cationic surfactant, such as MIRAPOL.TM. or SANIZOL B-50.TM., and nonionic surfactant such as IGEPAL 897.TM., utilizing a high shearing device, such as Branson 750 ultrasonicator or a Brinkman Polytron, or microfluidizer or sonicator, thereafter adding an anionic surfactant such as sodium dodecyl sulfate or NEOGEN R.TM., thereby resulting in a flocculation or heterocoagulation of the fine toner particles, and which on further shearing of from about 1 minute to about 120 minutes followed by mechanical stirring of from about 1 minute to about 3 days results in the redispersion of the fine toner particles; and thereafter heating to provide for fine toner particle fusion or coalescence; followed by washing with, for example, hot water to remove surfactant, and drying whereby toner particles comprised of resin and pigment with various particle size diameters can be obtained, such as from about 5 to about 21 microns in average volume particle diameter. The aforementioned toners are especially useful for the development of colored images with excellent line and solid resolution, and wherein substantially no background deposits are present. While not being desired to be limited by theory, it is believed that the flocculation or heterocoagulation is formed by the neutralization of the cationic surfactant absorbed on the toner particles, with the anionic surfactant added during shearing step. The high shearing stage disperses the formed large flocculants to a dispersed mixture of fine toner particles. Thereafter, heating is applied to fuse the fine toner particles or coalesce the fine particles to toner composites. Furthermore, in other embodiments the ionic surfactants addition can be changed, such that the fine toner particles are first dispersed in an aqueous solution containing the anionic surfactant, and the cationic surfactant is added thereafter, followed by shearing, stirring and heating to provide toner particles by fusion or coalescence of the fine toner particle to toner size particles of from about 7 to about 21 microns in average volume diameter as measured by the Coulter Counter. In embodiments, the toner composite morphology can be controlled such that a potato shape is attained by heating the statically bounded aggregate particle of from about 10.degree. to about 20.degree. C. above the glass transition temperature of the resin, which is generally from about 50.degree. to about 65.degree. C., or alternatively can be controlled such that a spherical shape is attained by heating the statically bounded aggregate particles to from about 20.degree. to about 40.degree. C. above the glass transition temperature of the resin.
Numerous processes are known for the preparation of toners, such as, for example, conventional processes wherein a resin is melt kneaded or extruded with a pigment, micronized and pulverized to provide toner particles with an average volume particle diameter of from about 7 microns to about 20 microns and with broad geometric size distribution of from about 1.4 to about 1.7. In such processes, it is usually necessary to subject the aforementioned toners to a classification procedure such that the geometric size distribution of from about 1.2 to about 1.4 are attained. However, in the aforementioned conventional process, low toner yields after classification may be obtained. Generally, during the preparation of toners with average particle size diameters of from about 11 microns to about 15 microns, toner yields range from about 70 percent to about 85 percent after classification. The classified portions, which are from about 15 to about 30 percent by weight of the toner, are of average volume diameter of from about 5 to about 9 microns as measured by a Coulter Counter. This classified portion is usually recycled in the extrusion or melt kneading step, or disposed in acceptable land filled sites. Moreover, during the preparation of smaller sized toners with particle sizes of from about 7 microns to about 11 microns, lower toner yields are obtained after classification, such as from about 50 percent to about 60 percent after classification, and the classified portion is from about 40 to about 50 percent by weight of toner of average volume diameter of from about 1 to about 5 microns as measured by the Coulter Counter. This classified portion is usually recycled in the melt kneaded or extrusion steps. With the processes of the present invention, in embodiments the classified portion is referred to as fine toner particles, and of from, for example, about 2 microns to about 5 microns in average diameter can be recycled in a more economical manner without resorting to conventional process such as melt kneading or extruding, micronizing and pulverizing. With the process of this invention, the toner fines can be recycled to provide toners of from about 7 to about 21 microns as determined by the Coulter Counter and with geometric size distributions, such as from about 1.20 to about 1.4, and preferably from about 1.20 to about 1.35. High toner yields are attained, such as from about 90 percent to about 98 percent, in embodiments of the present invention.
There is illustrated in U.S. Pat. No. 4,996,127 a toner of associated particles of secondary particles comprising primary particles of a polymer having acidic or basic polar groups and a coloring agent. The polymers selected for the toners of this '127 patent can be prepared by an emulsion polymerization method, see for example columns 4 and 5 of this patent. In column 7 of this '127 patent, it is indicated that the toner can be prepared by mixing the required amount of coloring agent and optional charge additive with an emulsion of the polymer having an acidic or basic polar group obtained by emulsion polymerization. Also, note column 9, lines 50 to 55, wherein a polar monomer such as acrylic acid in the emulsion resin is necessary, and toner preparation is not obtained without the use, for example, of acrylic acid polar group, see Comparative Example I. The process of the present invention need not utilize polymers with polar acid groups, and toners can be prepared with resins such as poly(styrene butadiene) or PLIOTONE.TM. without containing polar acid groups. Additionally, the toner of the '127 patent does not utilize, it is believed, counterionic surfactant and flocculation process. In U.S. Pat. No. 4,983,488, there is disclosed a process for the preparation of toners by the polymerization of a polymerizable monomer dispersed by emulsification in the presence of a colorant and/or a magnetic powder to prepare a principal resin component and then effecting coagulation of the resulting polymerization liquid in such a manner that the particles in the liquid after coagulation have diameters suitable for a toner. It is indicated in column 9 of this patent that coagulated particles of 1 to 100, and particularly 3 to 70, are obtained. This process is thus directed, for example, to the use of coagulants, such as inorganic magnesium sulfate, which are not easily removed from the toner product. Furthermore, the '488 patent does not disclose the use of counterionic flocculation. Similarly, the aforementioned disadvantages are noted in other prior art, such as U.S. Pat. No. 4,797,339, wherein there is disclosed a process for the preparation of toners by resin emulsion polymerization, which similar to the '127 patent utilizes polar resins of opposite charges, and wherein flocculation as in the present invention is not disclosed; and U.S. Pat. No. 4,558,108, wherein there is disclosed a process for the preparation of a copolymer of styrene and butadiene by specific suspension polymerization.
In copending application U.S. Ser. No. 921,165, the disclosure of which is totally incorporated herein by reference, there is disclosed a process for the preparation of toners comprised of dispersing a polymer solution comprised of an organic solvent, and a polyester homogenizing and heating the mixture to remove the solvent and permit formation of the toner composites. Additionally, there is disclosed in U.S. Pat. No. 5,278,020, the disclosure of which is totally incorporated herein by reference, a process for the preparation of in situ toners comprising a halogenization procedure which chlorinates the outer surface of the toner which results in enhanced blocking properties. More spefifically, this patent application discloses an aggregation process wherein a pigment mixture containing an ionic surfactant is added to a resin mixture containing a polymer resin particles of less than 1 micron nonionic and counterionic surfactant, and thereby causing a flocculation which is dispersed to statically bound aggregates of about 0.5 to about 5 microns in volume diameter as measured by the Coulter Counter, and thereafter heating to form toner composites of from about 3 to about 7 microns in volume diameter and narrow geometric size distribution of from about 1.2 to about 1.4, as measured by the Coulter Counter, and which apparently exhibit low fixing temperature of from about 125.degree. to about 150.degree. C., low paper curling, and image to paper gloss matching.


Embodiments of the disclosure include earplug dispensers that may comprise a rotating cam assembly operable to dispense one or more earplug to a user when a knob is rotated by the user. In some embodiments, the cam assembly may comprise and upper cam layer and a lower cam layer attached via clips to the rotating knob. Upon rotation of the knob, the upper cam layer may cause the earplugs to fall through one or more cavities to the lower cam layer. The lower cam layer may comprise a pushing structure operable to move the earplugs, upon rotation of the knob, within the lower cam layer to fall down through an opening in the dispenser. In some embodiments, the earplugs may fall through an opening in the rotating knob.

Earplug dispensers may allow for one earplug, or a small number of earplugs, to be dispensed to a user at a time from a store of multiple earplugs. Dispensers provide a convenient way to deliver earplugs to a user, for example in a work environment where many different workers are required to wear earplugs on the job. Many dispensers rely on gravity to move earplugs through a dispensing mechanism.


Systems and methods for sending/receiving improved in-browser notification messages are provided. The notification messages are overlaid on HTTP traffic on port 80 for IP addresses provisioned to receive the notification messages from various sources, including weather, emergency broadcast, and police stations. A load balancer within the end-to-end system allows HTTP traffic on port 80 to be forked from non HTTP traffic on port 80 to selectively insert notification messages. The notifications are inserted by an internet content adoption protocol (ICAP) server in communication with other devices within the system.

It is necessary for an internet service provider (ISP) to inform its subscribers in real-time about important information pertaining to usage, policy changes, alerts, etc. ISPs currently utilize several methods, including e-mail, telephone, postal mail, and walled-garden and proprietary vendor in-browser notification products, to notify subscribers. However, these notification methods are not immediate and not always successful. For instance, subscribers do not regularly check their emails and, therefore, may overlook the urgency of a particular message. Also, postal mail should not be utilized for extremely time-sensitive messages that require immediate attention. In addition, subscribers may not appreciate unsolicited telephone calls from their ISP.
While a walled-garden approach to notifying subscribers may be effective for certain applications, the drawback to this method is that it blocks all network traffic and, therefore, the user is unable to browse the internet while receiving notifications. As such, the need arises for a real-time notification method that is guaranteed to be viewed and does not disrupt subscriber services.
Currently, there are certain methods for performing in-browser notifications, all of which have limitations. One method is to deploy a system that inspects all packets traversing through the ISP's network and inject extra packets into the stream to notify the user when needed. The technology underlying this method is commonly referred to as Deep Packet Inspection and may serve many other purposes but requires that the technology be deployed throughout the ISP's network in order to view all packets. This technique is not passive and requires connections to be reset. The system has to spoof the server response to an HTTP request packet in order to insert a notification. Therefore, the perception of authenticity from the subscriber's point-of-view may be reduced.
A second current method for performing in-browser notifications is to have a software application deployed on the subscribers' computer that automatically displays a notification when needed. However, this method is inefficient as it requires the user to install the ISP's software package on each PC for the notification to be read.
Therefore, there is a need in the art for alternative schemes for routing specific traffic to users that need to be notified with a message in real-time over the internet.

This patent is subject to a terminal disclaimer.

System and method for improved notifications


A device may receive data that is related to historical reports associated with an organization, historical audits of the historical reports, and individuals associated with the historical reports. The device may determine a multi-entity profile for the data. The multi-entity profile may include a set of groupings of the data by a set of attributes included in the data. The device may determine, using the multi-entity profile, a set of supervised model features for the historical reports. The device may determine, using the multi-entity profile, a set of unsupervised model features for the historical reports independent of the historical audits. The device may determine, utilizing a model, a score for a report. The device may perform one or more actions.

An organization may generate various types of reports related to operations of the organization. For example, the organization may generate expense reports, time reports, revenue reports, and/or the like. A report may be associated with an individual (e.g., that submitted the report, that is associated with the content of the report, and/or the like), a location (e.g., of a subject matter of the report, an individual associated with the report, and/or the like), an amount of value (e.g., of an expense for an expense report, of time for a time report, and/or the like), and/or the like.


A random number generating apparatus is equipped with a random number memory section in which a plurality of sets of random numbers, whose total energy R, has a fixed value are stored. N random numbers are generated on the basis of more than one set of random numbers read from the random number memory section, and further multiplied by a square root of (T×M÷R÷N) to obtain a random number sequence having a predetermined energy. A normalization coefficient S can be obtained with a simple process without any usage of the calculation of division and square root multiplication, thereby enabling a small-scale apparatus to be realized. Accordingly, the random number generating apparatus has a decreased scale in the circuit arrangement capable of outputting the random numbers having a predetermined energy.

1. Technical Field of the Invention
The present invention relates to a random number generating apparatus, a random number generating method, and a recording medium in which a program for generating random numbers is stored, and more specifically to a random number generating apparatus, a random number generating method, a program for generating random numbers, an audio decoder and an audio decoding method, wherein a random number sequence having a desired energy can be generated with a small-scale apparatus.
2. Description of the Related Art
N random numbers Q(1) to Q(N), whose total energy (square sum) is identical with T, that is, square sum Q(1)×Q(1)+Q(2)×Q(2)+ . . . +Q(N)×Q(N)=T, are required.
Such random numbers are used, for instance, in an audio decoder. In accordance with MPEG-4 AAC (Advanced Audio Coding), which is the international standard of audio signal encoding, the random numbers have a function called PNS (Perceptual Noise Substitute). When the PNS is used, detailed information having a predetermined frequency band is not encoded in an audio encoder, but only the total energy E of the frequency domain signals in the frequency band is encoded. In an audio decoder, white noise (random number) whose energy is identical with the total energy E of the coded signals is used as a frequency domain signal in the frequency band. In the case of generating such a signal, it is required to generate a random number sequence having such a specific energy as in the present invention.
In the present invention, pre-specified random numbers are stored in advance, and then used to generate a random number, as will be later described. Such a prior art, in which the random numbers are stored in advance to generate a random number, is disclosed in, for instance, Japanese Unexamined Patent Publication No. 61-114326, Japanese Patent Publication No. 2615743 and Japanese Patent Publication No. 2567681.
Referring to a block diagram shown in FIG. 1, a general method for generating N random numbers Q(1) to Q(N), whose total energy (square sum) is identical with T, will be described. A generalized random number generating apparatus shown in FIG. 1 comprises a random number generating section 701, an energy calculating section 702 and a random number normalizing section 703. The generalized random number generating apparatus having such a circuit arrangement serves to operate as follows:
The number N of random numbers to be output and an energy value T of the random numbers to be output are input in the random number generating apparatus. The random number generating section 701 generates N normal random numbers Q1(1) to Q1(N) and supplies these normal random numbers to both the energy calculating section 702 and the random number normalizing section 703.
The energy calculating section 702 calculates the total energy P of the random numbers Q1(1) to Q1(N), that is, the square sum Q1(1)×Q1(1)+Q1(2)×Q1(2)+ . . . +Q1(N)×Q1(N)=P, and then supplies the total energy P to the random number normalizing section 703.
In the random number normalizing section 703, a normalization coefficient S is firstly determined by raising (T÷P) to the 0.5 power (i.e., a square root of (T÷P)), and subsequently N random numbers Q(1) to Q(N) are determined in such a manner that the total energy T can be obtained from the Q1(1) to Q(N) multiplied by the normalization coefficient S. Namely, each of the random numbers Q(1) to Q(N) is obtained from the calculation of Q(J)=Q1(J)×S as for J=1 to N. The random numbers Q(1) to Q(N) thus obtained are supplied as final outputs from the random number generating apparatus.
In the above-mentioned prior art, a complexity in the process of the energy calculation and the normalization of the random numbers cause the random number generating apparatus to be increased in the scale. In other words, both a large-scale circuit arrangement and the complicated process increase both the space required for the apparatus and the cost. This is due to the facts that the numeric calculations of division and the square root multiplication are required to obtain the normalization coefficient S.

Random number generating apparatus, random number generating method, program for generating random numbers, audio decoder and audio decoding method


A transmitter device is provided for transmission of data via DC power distribution lines includes a sequence generator arranged for receiving a raw data bit stream to be transmitted over a positive and a negative DC power distribution line and for deriving a switching sequence based on the raw data bit stream, and a circuit including one or more capacitors and a plurality of switches controllable with the switching sequence derived in the sequence generator.

In recent years the number of electrical elements connected via a wire-line network has rapidly grown, especially in automotive industrial environments. High speed connections offering bit rates above 1 Mbps via differential bus systems such as Controller Area Networks (CAN), are broadly used. Apart from the speed also a low latency between reception and acknowledgement of messages are key features to allow for coping with an increasing number of nodes participating in the network.
The power supply of the network nodes is mostly taken from a separate wiring assembly which is economically and environmentally inefficient. The fact that the power supply harness is spectrally different from the network connection, motivates to merge them. Such a system is called a PLC (Power Line Communication) system, wherein the communication is performed via the power supply connection lines. Merging both functions, i.e. network node power supply and communication, offers the advantage that e.g. in a CAN network two wires can be saved. Hence, a gain in cost can be achieved.
Most of the available solutions today are based on a carrier modulation. The modulation scheme however introduces latency in the communication because the carrier recovery and signal processing to extract the message data is time-consuming. Hence, even apart from the cost of the numerous components required in such solution, a carrier based system is clearly not capable of addressing high speed and low latency demands.
Such high speed and low latency demands may be needed for example in automotive interior light applications. A high number of network nodes, in that case lighting nodes, with for instance 20 . . . 200 members, can form a lighting unit (e.g. a light stripe or lighting surface) able to display also information for the driver. Such information is e.g. welcome information displayed when opening the car, whereby the different network nodes are individually addressed to emit light of different colours and intensities. Such a lighting unit might also display a warning information, e.g. if another car is detected by radar sensors in the door to be in the blind spot of the mirror. In external automotive lighting applications, a tail light might form a display, which can indicate to other cars, bicycles or pedestrians, the driver is about to open the car door for example. In all these applications any flickering or delayed response of one or more network nodes must be avoided as the human eye is very sensitive to that.
In these applications it is very common that the power supply of the network nodes is provided from one and the same harness.
In order to improve the performance in terms of achievable network speed and latency baseband communication systems have been proposed. In such systems the data is applied directly to the power supply without a carrier. The data signal is applied by pulses during the dominant levels (representing the low level of the data signal in case of a CAN bus). Advantages of a baseband system are higher bit rates compared to signal carrier methods using high frequencies.
U.S. Pat. No. 6,577,230 B1 discloses a network with at least two lines and network users. The lines are used both for data transmission among users and for power transmission from a voltage source to the network users. The data is transmitted symmetrically and differentially via the two lines. One terminal of the voltage source is coupled to both lines. The network users are coupled to the other voltage source terminal via an electrical connection separated from the network. The users symmetrically couple the transmitted power from both lines of the network. The two lines are isolated from each other. The users may use inductive or capacitive coupling of data, and use inductors to couple the power. The proposed network can for example be applied in a motor vehicle and in domestic appliances.
EP1017196 B1 relates to transferring digital data using differential and common mode data signalling. A first digital data signal is differentially transmitted using two differential signal components sent over a two-wire interface and switched between several different discrete signal levels. A common mode signal is carried across the differential pair and used to transmit a second digital data signal. The data output stage uses a common mode injection circuit to inject a common mode voltage or current equally onto both components of the differential interface. The data receiver has a common mode extraction circuit connected to the differential interface which extracts the injected common mode signal. Common mode data transmission can be in the same or opposite direction as the differential data transmission. Common mode signals may be injected in several layers and across two or more differential interfaces to increase the data content per interface line and to improve accuracy.
The recent application US2020/127702 A1 describes a first device that provides both power and data to a second device over a power line connection between the two devices. The first device includes a power line extending from a power supply, a ground line extending from a ground, a first impedance in the power line, and a second impedance in the ground line. A modulator comprised of a transistor and modulator impedance is between the first impedance and the second impedance, and a tank capacitor is between the power line and the ground line, outside the first impedance and second impedance. A comparator is coupled between the first and second impedance. A switch may be included to short out the first and second impedance, thereby enabling transmission of only power for period of time, and return to a mode of transmitting both data and power. The first device may also receive data from the second device over the power line connection.
There may, however, be a need for alternative implementations of a baseband power line communication system.

Transmitter for power line communication


One example disclosed herein involves forming source/drain conductive contacts to first and second source/drain regions, the first source/drain region being positioned between a first pair of transistor devices having a first gate pitch dimension, the second source/drain region being positioned between a second pair of transistor devices having a second gate pitch dimension that is greater than the first gate pitch dimension, wherein the first and second pairs of transistor devices have a gate structure and sidewall spacers positioned adjacent the gate structure.

1. Field of the Invention
The present disclosure generally relates to the fabrication of integrated circuits, and, more particularly, to various methods of forming different spacer structures on integrated circuit products having different gate pitch dimensions and the resulting products.
2. Description of the Related Art
In modern integrated circuits, such as microprocessors, storage devices and the like, a very large number of circuit elements, especially transistors, are provided and operated on a restricted chip area. In integrated circuits fabricated using metal-oxide-semiconductor (MOS) technology, field effect transistors (FETs) (both NMOS and PMOS transistors) are provided that are typically operated in a switching mode. That is, these transistor devices exhibit a highly conductive state (on-state) and a high impedance state (off-state). FETs may take a variety of forms and configurations. For example, among other configurations, FETs may be either so-called planar FET devices or three-dimensional (3D) devices, such as FinFET devices.
A field effect transistor (FET), irrespective of whether an NMOS transistor or a PMOS transistor is considered, and irrespective of whether it is a planar or 3D FinFET device, typically comprises doped source and drain regions that are formed in a semiconducting substrate that are separated by a channel region. A gate insulation layer is positioned above the channel region and a conductive gate electrode is positioned above the gate insulation layer. The gate insulation layer and the gate electrode may sometimes be referred to as the gate structure for the device. By applying an appropriate voltage to the gate electrode, the channel region becomes conductive and current is allowed to flow from the source region to the drain region. In a planar FET device, the gate structure is formed above a substantially planar upper surface of the substrate. In some cases, one or more epitaxial growth processes are performed to form epi semiconductor material in recesses formed in the source/drain regions of the planar FET device. In some cases, the epi material may be formed in the source/drain regions without forming any recesses in the substrate for a planar FET device. The gate structures for such planar FET devices may be manufactured using so-called "gate-first" or "replacement gate" (gate-last) manufacturing techniques.
Immense progress has been made over recent decades with respect to increased performance and reduced feature sizes of circuit elements, such as transistors. However, the ongoing demand for enhanced functionality of electronic devices has forced semiconductor manufacturers to steadily reduce the dimensions of the circuit elements and to increase the operating speed of the circuit elements. The continuing scaling of feature sizes, however, involves great efforts in redesigning the structure of the devices, the process techniques and developing new process strategies and tools so as to comply with new design rules. More specifically, to improve the operating speed of FETs, and to increase the density of FETs on an integrated circuit device, device designers have greatly reduced the physical size of FETs over the past decades. That is, the channel length of planar FETs has been significantly decreased, which has resulted in improving the switching speed of FETs. However, decreasing the channel length of a FET also decreases the distance between the source region and the drain region. In some cases, this decrease in the separation between the source and the drain makes it difficult to efficiently inhibit the electrical potential of the source region and the channel region of a planar FET device from being adversely affected by the electrical potential of the drain region. This is sometimes referred to as a so-called short channel effect, wherein the characteristic of the planar FET as an active switch is degraded.
As noted above, in contrast to a planar FET, which has a substantially planar structure, a so-called FinFET device has a three-dimensional (3D) structure. The basic features of a FinFET device include one or more vertically oriented fins that span the channel region of the device and the source/drain regions, a gate structure positioned around the exposed portions of the fins in the channel region of the device, a gate cap layer positioned above the gate electrode of the gate structure, and sidewall spacers positioned adjacent the gate structure and the gate cap layer. The sidewall spacers and gate cap layer protect the gate structure during subsequent processing operations. The gate structure may be comprised of a layer of insulating material, e.g., a layer of high-k insulating material or silicon dioxide, and one or more conductive material layers (e.g., metal and/or polysilicon) that serve as the gate electrode for the device. As noted above, the fins have a three-dimensional configuration: a height, a width and an axial length. The axial length corresponds to the direction of current travel in the device when it is operational. The portions of the fins covered by the gate structure are the channel regions of the FinFET device. In a conventional process flow, the portions of the fins that are positioned outside of the spacers, i.e., in the source/drain regions of the device, may be increased in size or even merged together by performing one or more epitaxial growth processes to form epi semiconductor material on the portions of the fins in the source/drain regions of the FinFET device. The process of increasing the size of or merging the fins in the source/drain regions of the FinFET device is performed for various reasons, e.g., to reduce the resistance of source/drain regions and/or to make it easier to establish electrical contact to the source/drain regions, etc. Even if an epi "merge" process is not performed, an epi growth process will typically be performed on the fins in the source/drain regions of the device to increase their physical size. In a FinFET device, the gate structure may enclose both sides and the upper surface of all or a portion of the fins to form a tri-gate structure so as to result in a channel having a three-dimensional structure instead of a planar structure. In some cases, an insulating cap layer, e.g., silicon nitride, is positioned at the top of the fins and the FinFET device only has a dual-gate structure (fin sidewalls only).
Thus, unlike a planar FET, in a FinFET device, a channel is formed perpendicular to the upper surface of the semiconducting substrate, thereby reducing the physical size of the FinFET device. Also, in a FinFET device, the junction capacitance at the drain region of the device is greatly reduced, which tends to significantly reduce short channel effects. When an appropriate voltage is applied to the gate electrode of a FinFET device, the surfaces (and the inner portion near the surface) of the fins, i.e., the vertically oriented sidewalls and the top upper surface of the fin (for a tri-gate device), form a surface inversion layer or a volume inversion layer that contributes to current conduction. In a FinFET device (tri-gate), the "channel-width" is estimated to be about two times (2×) the vertical fin-height plus the width of the top surface of the fin, i.e., the fin width. Multiple fins can be formed in the same foot-print as that of a planar transistor device. Accordingly, for a given plot space (or foot-print), FinFETs tend to be able to generate significantly higher drive current density than planar FET devices. Additionally, the leakage current of FinFET devices after the device is turned "OFF" is significantly reduced as compared to the leakage current of planar FETs, due to the superior gate electrostatic control of the "fin" channel on FinFET devices. In short, the 3D structure of a FinFET device is a superior structure as compared to that of a planar FET, especially in the 20 nm CMOS technology node and beyond. The gate structures for such FinFET devices may also be manufactured using so-called "gate-first" or "replacement gate" (gate-last) manufacturing techniques.
For many early device technology generations, the gate structures of most transistor elements (planar or FinFET devices) were comprised of a plurality of silicon-based materials, such as a silicon dioxide and/or silicon oxynitride gate insulation layer, in combination with a polysilicon gate electrode. However, as the channel length of aggressively scaled transistor elements has become increasingly smaller, many newer generation devices employ gate structures that contain alternative materials in an effort to avoid the short channel effects which may be associated with the use of traditional silicon-based materials in reduced channel length transistors. For example, in some aggressively scaled transistor elements, which may have channel lengths on the order of approximately 10-32 nm or less, gate structures that include a so-called high-k dielectric gate insulation layer and one or more metal layers that function as the gate electrode (HK/MG) have been implemented. Such alternative gate structures have been shown to provide significantly enhanced operational characteristics over the heretofore more traditional silicon dioxide/polysilicon gate structure configurations.
Depending on the specific overall device requirements, several different high-k materials—i.e., materials having a dielectric constant, or k-value, of approximately 10 or greater—have been used with varying degrees of success for the gate insulation layer in an HK/MG gate electrode structure. For example, in some transistor element designs, a high-k gate insulation layer may include tantalum oxide (Ta2O5), hafnium oxide (HfO2), zirconium oxide (ZrO2), titanium oxide (TiO2), aluminum oxide (Al2O3), hafnium silicates (HfSiOx) and the like. Furthermore, one or more non-polysilicon metal gate electrode materials—i.e., a metal gate structure—may be used in HK/MG configurations so as to control the work function of the transistor. These metal gate electrode materials may include, for example, one or more layers of titanium (Ti), titanium nitride (TiN), titanium-aluminum (TiAl), titanium-aluminum-carbon (TiALC), aluminum (Al), aluminum nitride (AlN), tantalum (Ta), tantalum nitride (TaN), tantalum carbide (TaC), tantalum carbonitride (TaCN), tantalum silicon nitride (TaSiN), tantalum silicide (TaSi) and the like.
One well-known processing method that has been used for forming a transistor with a high-k/metal gate structure is the so-called "gate last" or "replacement gate" technique. The replacement gate process may be used when forming planar devices or 3D devices. FIGS. 1A-1E simplistically depict one illustrative prior art method for forming an HK/MG replacement gate structure using a replacement gate technique on a planar transistor device. As shown in FIG. 1A, the process includes the formation of a basic transistor structure above a semiconductor substrate 12 in an active area defined by a shallow trench isolation structure 13. At the point of fabrication depicted in FIG. 1A, the device 10 includes a sacrificial gate insulation layer 14, a dummy or sacrificial gate electrode 15, sidewall spacers 16, a layer of insulating material 17 and source/drain regions 18 formed in the substrate 12. The various components and structures of the device 10 may be formed using a variety of different materials and by performing a variety of known techniques. For example, the sacrificial gate insulation layer 14 may be comprised of silicon dioxide, the sacrificial gate electrode 15 may be comprised of polysilicon, the sidewall spacers 16 may be comprised of silicon nitride and the layer of insulating material 17 may be comprised of silicon dioxide. The source/drain regions 18 may be comprised of implanted dopant materials (N-type dopants for NMOS devices and P-type dopants for PMOS devices) that are implanted into the substrate 12 using known masking and ion implantation techniques. Of course, those skilled in the art will recognize that there are other features of the transistor 10 that are not depicted in the drawings for purposes of clarity. For example, so-called halo implant regions are not depicted in the drawings, as well as various layers or regions of silicon/germanium that are typically found in high performance PMOS transistors. At the point of fabrication depicted in FIG. 1A, the various structures of the device 10 have been formed and a chemical mechanical polishing (CMP) process has been performed to remove any materials above the sacrificial gate electrode 15 (such as a protective cap layer (not shown) comprised of silicon nitride) so that at least the sacrificial gate electrode 15 may be removed.
As shown in FIG. 1B, one or more etching processes are performed to remove the sacrificial gate electrode 15 and the sacrificial gate insulation layer 14 to thereby define a gate cavity 20 where a replacement gate structure will subsequently be formed. Typically, the sacrificial gate insulation layer 14 is removed as part of the replacement gate technique, as depicted herein. However, the sacrificial gate insulation layer 14 may not be removed in all applications. Even in cases where the sacrificial gate insulation layer 14 is intentionally removed, there will typically be a very thin native oxide layer (not shown) that forms on the substrate 12 within the gate cavity 20.
Next, as shown in FIG. 1C, various layers of material that will constitute a replacement gate structure 30 are formed in the gate cavity 20. The materials used for the replacement gate structures 30 for NMOS and PMOS devices are typically different. For example, the replacement gate structure 30 for an NMOS device may be comprised of a high-k gate insulation layer 30A, such as hafnium oxide, having a thickness of approximately 2 nm, a first metal layer 30B (e.g., a layer of titanium nitride with a thickness of about 1-2 nm), a second metal layer 30C—a so-called work function adjusting metal layer for the NMOS device—(e.g., a layer of titanium-aluminum or titanium-aluminum-carbon with a thickness of about 5 nm), a third metal layer 30D (e.g., a layer of titanium nitride with a thickness of about 1-2 nm) and a bulk metal layer 30E, such as aluminum or tungsten.
Ultimately, as shown in FIG. 1D, one or more CMP processes are performed to remove excess portions of the gate insulation layer 30A, the first metal layer 30B, the second metal layer 30C, the third metal layer 30D and the bulk metal layer 30E positioned outside of the gate cavity 20 to thereby define the replacement gate structure 30 for an illustrative NMOS device. Typically, the replacement metal gate structure 30 for a PMOS device does not include as many metal layers as does an NMOS device. For example, the gate structure 30 for a PMOS device may only include the high-k gate insulation layer 30A, a single layer of titanium nitride—the work function adjusting metal for the PMOS device—having a thickness of about 3-4 nm, and the bulk metal layer 30E.
FIG. 1E depicts the device 10 after several process operations were performed. First, one or more recess etching processes were performed to remove upper portions of the various materials within the cavity 20 so as to form a recess within the gate cavity 20. Then, a gate cap layer 31 was formed in the recess above the recessed gate materials. The gate cap layer 31 is typically comprised of silicon nitride and it may be formed by depositing a layer of gate cap material so as to over-fill the recess formed in the gate cavity and thereafter performing a CMP process to remove excess portions of the gate cap material layer positioned above the surface of the layer of insulating material 17. The gate cap layer 31 is formed so as to protect the underlying gate materials during subsequent processing operations.
Over recent years, due to the reduced dimensions of the transistor devices, the operating speed of the circuit components has been increased with every new device generation, and the "packing density," i.e., the number of transistor devices per unit area, in such products has also increased during that time. Such improvements in the performance of transistor devices has reached the point where one limiting factor relating to the operating speed of the final integrated circuit product is no longer the individual transistor element but the electrical performance of the complex wiring system that is formed above the device level that includes the actual semiconductor-based circuit elements. Typically, due to the large number of circuit elements and the required complex layout of modern integrated circuits, the electrical connections of the individual circuit elements cannot be established within the same device level on which the circuit elements are manufactured, but require one or more additional metallization layers, which generally include metal-containing lines providing the intra-level electrical connection, and also include a plurality of inter-level connections or vertical connections, which are also referred to as vias. These vertical interconnect structures comprise an appropriate metal and provide the electrical connection of the various stacked metallization layers.
Furthermore, in order to actually connect the circuit elements formed in the semiconductor material with the metallization layers, an appropriate vertical contact structure is provided, a first end of which is connected to a respective contact region of a circuit element, such as a gate electrode and/or the drain and source regions of transistors, and a second end that is connected to a respective metal line in the metallization layer by a conductive via. In some applications, the second end of the contact structure may be connected to a contact region of a further semiconductor-based circuit element, in which case the interconnect structure in the contact level is also referred to as a local interconnect. The contact structure may comprise contact elements or contact plugs having a generally square-like or round shape that are formed in an interlayer dielectric material, which in turn encloses and passivates the circuit elements.
As device dimensions have decreased, the conductive contact elements in the contact level have to be provided with critical dimensions in the same order of magnitude. The contact elements typically represent plugs, which are formed of an appropriate metal or metal composition, wherein, in sophisticated semiconductor devices, tungsten, in combination with appropriate barrier materials, has proven to be a viable contact metal. When forming tungsten-based contact elements, typically the interlayer dielectric material is formed first and is patterned so as to receive contact openings, which extend through the interlayer dielectric material to the corresponding contact areas of the circuit elements. In particular, in densely packed device regions, the lateral size of the drain and source areas and thus the available area for the contact regions is 100 nm and significantly less, thereby requiring extremely complex lithography and etch techniques in order to form the contact openings with well-defined lateral dimensions and with a high degree of alignment accuracy.
For this reason, contact technologies have been developed in which contact openings are formed in a self-aligned manner by removing dielectric material, such as silicon dioxide, selectively from the spaces between closely spaced gate electrode structures. That is, after completing the transistor structure, the gate electrode structures are used as etch masks for selectively removing the silicon dioxide material in order to expose the source/drain regions of the transistors, thereby providing self-aligned trenches which are substantially laterally delineated by the spacer structures of the gate electrode structures. Consequently, a corresponding lithography process only needs to define a global contact opening above an active region, wherein the contact trenches then result from the selective etch process using the gate electrode structures, i.e., the portions exposed by the global contact opening, as an etch mask. Thereafter, an appropriate contact material, such as tungsten and the like, may be filled into the contact trenches.
Another issue that has become more important as a result of the decrease in device dimensions and the corresponding increase in packing densities is the parasitic capacitors that are created which may act to reduce the operating speed of transistor devices. Typically, as noted above, the gate structure of a transistor will include at least one sidewall spacer positioned adjacent the gate structure. The sidewall spacers are typically made of silicon nitride (which has a relatively high k-value of, e.g., about 7-8) and they are normally formed very soon after the sacrificial gate structure is formed for devices manufactured using the replacement gate technique. For replacement gate structures, two of the primary purposes of the silicon nitride spacers are to define the gate cavity in the replacement gate manufacturing process and to protect the final replacement gate structure. Conductive contacts, such as self-aligned contacts, are formed and conductively coupled to the source/drain regions of the device. As a result of the structure of the transistors, a gate-to-contact capacitor is generally defined, wherein the gate electrode of the replacement gate structure functions as one of the conductive plates of the capacitor and the source/drain contact functions as the other conductive plate of the capacitor. The presence of the silicon nitride spacer material (with a relatively high k-value) tends to increase the parasitic capacitance between the conductive gate electrode and source/drain contacts. This problem has become even more problematic as packing densities have increased which causes the gate structures of adjacent transistors to be positioned ever closer to one another. Unfortunately, the gate-to-contact capacitor tends to slow down the switching speed of the transistor as this capacitor must be charged and discharged each time the transistor is turned on-off.
The present disclosure is directed to various methods of forming different spacer structures on integrated circuit products having different gate pitch dimensions and the resulting products that may avoid, or at least reduce, the effects of one or more of the problems identified above.

Methods of forming different spacer structures on integrated circuit products having differing gate pitch dimensions and the resulting products

International Business Machines Corporation


A method and system to use existing Non-access stratum (NAS) signaling connection for pending uplink signaling/data after Tracking Area Update Procedure (TAU) complete is disclosed. The proposed method handles the EPS Session Management (ESM), Short Message Service (SMS) or voice call or data when a User Equipment (UE) is waiting for TAU accept. The method allows UE to inform the network with specific Information Element (IE) in TAU complete message, so that the network will take the next action. This will help to provide quick services to the user. Using the “CONN REQ TYPE” IE, in TAU complete, to handle all abnormal Cases for Circuit Switches (CS) services/data services in E-UTRAN (Evolved UTRAN) network.

In wireless networks, a user equipment (UE) communicates through wireless links to a network of base stations or other wireless access points connected to a telecommunications network. The wireless networks have undergone rapid development through the generations of Radio Access Technology (RAT). The initial deployment of systems using analogue modulation has been superseded by second generation (2G) digital systems such as GSM (Global System for Mobile communications), typically using GERA (GSM Enhanced Data rates for GSM Evolution Radio Access) radio access technology, and these systems have themselves been replaced by or augmented by third generation (3G) digital systems such as UMTS (Universal Mobile Telecommunications System), using the UTRA (Universal Terrestrial Radio Access) radio access technology. Third generation standards provide for a greater throughput of data than is provided by second generation systems; this trend is continued with the proposals by the Third Generation Partnership Project (3GPP) of the Long Term Evolution (LTE) system, using E-UTRA (Evolved UTRA) radio access technology, which offers potentially greater capacity and additional features compared with the previous standards.
LTE is a technology proposed by 3GPP which supports high data rate (50 Mbps UL and 100 Mbps DL) and is purely packet switched (PS) system. By nature of packet switched system, they handle bursty type of data in nature. In order to support Circuit Switched (CS) services like Short Messaging Service (SMS), voice call in a multimode device capable of LTE/3G/3G, 3GPP has come up with SMS over SGs, CS Fallback mechanism to send SMS over LTE network and fall back to 2G or 3G for voice call.
In a 3GPP based 3G/2G/LTE system, during RAT change from 3G or 2G to LTE or when UE moves from one tracking area to another tracking area which does not belong to the assigned TAI list, UE will do Normal/Combined Tracking area update procedure on LTE. TAI List indicates a list of tracking areas for which the UE doesn't need to perform a tracking area updating procedure when entered one of these TAs (in the list). The TAIs in a TAI list assigned by an (Mobility Management Entity) MME to the UE belongs to the same MME area. MME may send new Globally Unique Temporary ID (GUTI) in TAU Accept and will wait for TAU complete message. In this case, when some uplink signaling or data is triggered in UE, there might be chances that UE procedure will fail after TAU procedure due to release of NAS connection by MME. This will lead to delay in connection establishment to get the service.
Current 3GPP specification does not specify how to use existing NAS signaling connection for some pending uplink signaling like UE SMS/UE call/UE data in LTE when UE is waiting for TAU accept and active flag has not set in TAU request sent in IDLE mode.
Due to abovementioned reasons, it is evident that the existing methods fail to handle pending signaling or data by using existing NAS signaling connection which was established for TAU procedure, when UE is waiting for TAU accept.

Method to use existing NAS signaling connection for pending uplink signaling/data after TAU accept


Membrane strip diffusers are disclosed, useful for example in aerating wastewater in activated sludge plants. These diffusers have membranes, diffuser bodies and gas conduits elongated in the same general direction. Such conduits may be attached to or formed integrally with the diffuser bodies. Gas chambers form beneath the membranes when they inflate, and these are separate from but communicate with the gas conduits, e.g., through passageways distributed along the lengths of the membrane supports. Preferably, the passageway flow cross-sections are small, thus tending toward uniform distribution of gas along the membrane's length. Ways to edge- and end-seal the membranes to the diffuser bodies are also disclosed.

In treatment of domestic and industrial wastewater, aeration is one of the processes commonly used to promote biological consumption and removal of dissolved and suspended waste material. Aeration devices, called diffusers, are mounted at submerged locations in a man-made or natural wastewater impound, such as a tank or lagoon. Air and/or other treatment gas, in most instances composed of or containing some form of oxygen, is supplied to the diffusers in bulk and is discharged from them as multitudes of tiny bubbles. As these bubbles rise buoyantly through the wastewater, oxygen in the bubbles dissolves into the wastewater. Oxygen supports the life processes of bacteria, supplied to the wastewater in the treatment process, and these bacteria consume the waste. Other treatment gases (including vapors), and sometimes liquids, not necessarily containing oxygen, may be passed through the diffusers for a variety of purposes, such as for cleaning them.
Payments for electricity consumed by compressors or blowers that supply air and/or other treatment gas to the diffusers is one of the largest costs, if not the largest cost, of operating a wastewater treatment plant. Accordingly, much effort has been expended, by those working in this art, to enhance the efficiency of diffuser systems, including not only the diffusers themselves but also arrangements of and ways of operating diffusers within the plants. Moreover, efforts have been made to simplify, "ruggedize" and therefore reduce the capital and maintenance costs of diffuser systems. These efforts have led to a stream of improvements in wastewater treatment plant and diffuser design.
One popular type of diffuser that has been the focus of continuing research and development effort is the membrane diffuser. A membrane diffuser generates tiny gas bubbles by passing treatment gas into wastewater under pressure through a myriad of minuscule pores extending through relatively thin but tough rubbery material in the form of, for example, tubes, rectangular sheets, or disks that are of circular outline in plan view. These pored rubbery media, dubbed membranes, are typically secured in gas-tight relationship, e.g. by a clamping arrangement, to a suitable holder, referred to as a diffuser body.
FIGS. 1-5 depict one particularly popular type of membrane diffuser system which has been available from Sanitaire Division of ITT Industries and its predecessors for more than a decade. FIGS. 1-2 show that in such systems there is a diffuser 1 which includes a body 2 having a saddle-shaped lower wall 3 secured to the upper surface of a gas supply conduit 4 of circular cross-section. The body also includes an inclined conical wall 5, the upper, inner edge of which includes a shelf 6, upon which rests support plate 7. Surrounding plate 7 is a vertical sidewall 10 of the body, an upward extension of shelf 6 having threads 11 on its outer surface. A threaded ring 12 having inwardly projecting flange 13 is installed on threads 11. Membrane 14 includes a central portion 15 and, at its periphery, an integral O-ring portion 16 which is held in sealing engagement with the underside of flange 13, the inner surface of sidewall 10 and a step 17 formed in a peripheral upper edge of plate 7.
In the operation of such a diffuser, treating gas flows from the interior 20 of gas supply conduit 4 through an orifice 21 in the crown of the conduit, acting as a flow regulator. The treating gas enters the diffuser through gas inlet port 22 in lower wall 3 of the body and then passes through a plenum 23 within the body, through a gas passage 24 in support plate 7, through a gas chamber 25 formed between the upper surface of support plate 7 and the lower, gas influent surface of membrane 14, which is inflated when gas is flowing through the diffuser, and finally through perforations 26 in the membrane.
FIGS. 3-5 to illustrate the installation of such diffusers in a wastewater treatment plant. These figures portray schematically a wastewater treatment tank 30 having sides 31 (only one of which is shown), ends 32 and bottom 33. With the aid of conventional stands (not shown) secured to tank bottom 33, a number of the previously mentioned gas supply conduits 4 are mounted close to the bottom in a parallel array. Large numbers of diffusers 1 are mounted at spaced intervals along the gas supply conduits 4, and those conduits are connected through manifold 34 and downcomer pipe 35 to a source of treatment gas under pressure, such as one or more blowers or compressors (not shown).
In many wastewater treatment plants, the wastewater passes through a series of tanks, for example as illustrated in FIG. 5. The density of diffusers, that is, the number of diffusers, and thus the amount of diffuser discharge area per unit of tank bottom area, can be varied from tank to tank or within a given tank, depending on the requirements of the wastewater and of the particular type of treatment being performed. In certain instances, portions of the tank may have no diffusers installed, thereby facilitating, for example, in an aeration plant, the creation of anoxic zones. As persons skilled in the art will readily understand, there are many different ways of laying out the diffusers and gas supply conduits in wastewater treatment plants, and the subject matter depicted in these figures represents merely a sample rather than a comprehensive illustration of prior practice.
The diffusers illustrated in FIGS. 1-5, when viewed in plan view, are of circular outline, and are thus referred to as membrane disk diffusers. The particular diffusers illustrated above provides very high performance in terms of system durability and OTE (oxygen transfer efficiency) and, as such, have achieved wide acceptance in many countries throughout the world.
Numerous other membrane diffuser designs have developed, including membrane tube diffusers, based on tubular membranes, and panel diffusers, based for example on rectangular sheets of membrane material. Typically, they permit a modest degree of inflation of portions of the membrane surfaces by the pressurized treatment gas. Because of the clamping of disk and sheet membrane edges, inflation occurs inward of those edges. Membrane disk diffusers may or may not be restrained against inflation at their centers. With the rectangular sheet membranes of panel diffusers, the area of the membrane and the resultant potential for inflation are often considerably larger than in the disks. Thus, some type of overlying grid member with relatively large openings in it is usually included in the diffuser body and held against the upper surface of the membrane to control the extent to which it inflates.
Whether as a result of unexpected power failures or intentional shut-off for process reasons, membrane diffusers can undergo interruption of gas flow, resulting in deflation of the membranes. In view of their submergence and the great weight of the wastewater bearing down on the membranes, membrane diffuser bodies ordinarily include some sort of membrane support beneath the membrane to prevent it from being damaged or displaced under the weight of the wastewater when the membrane is no longer supported by gas pressure. When gas is flowing and the membrane is under pressure and at least partially inflated, a space or gas chamber exists between the upper surface of the support and the lower surface of the membrane.
Another category of membrane diffuser that has evolved is the strip diffuser. For example see U.S. Pat. Nos. 4,029,581 and 5,868,971; U.S. Published Patent Application US2002/0003314 A1; International (PCT) Published Application WO 98/21151; and Offenlegungschrift (German Published Application) DE 42 40 300 A1. The term strip is appropriate for these diffusers because their membranes and gas discharge surfaces generally have a length to width ratio larger than that found in the typical panel diffuser. For example, length to width ratios of about 4:1 or more, and in some cases considerably larger, can be found in strip diffusers.
Where there is this greater length to width ratio, it is possible to provide the diffuser with considerable aeration area while limiting its width. Diffuser area, utilized properly, can be a factor in attaining desired or increased levels of OTE (oxygen transfer efficiency), with resultant conservation of electricity during processing of a given amount of wastewater. Strip diffusers hold promise of a convenient way of increasing the mass transfer rate of oxygen into wastewater while maintaining OTE levels at least approximately consistent with disk diffusers. Also, in many instances it is possible to limit the width of the membrane in a strip diffuser to a sufficient extent that an overlying grid member and its attendant manufacturing costs can be dispensed with. On the other hand, in common with panel diffusers, strip diffusers include membranes and diffuser bodies which include membrane supports.
Strip diffusers are believed to represent a promising approach for further reducing the capital costs, including those of installation, and the operating costs, of biological wastewater treatment plants involving aeration. It is believed that there is room, and a need for, further improvements in strip diffusers, and the subject matter of the present disclosure and claims is aimed at fulfilling this need.


Techniques are disclosed for context-aware obfuscation and unobfuscation of sensitive content in the display of the sensitive content. An example methodology implementing the techniques includes receiving content for display, the content including metadata indicative of a location of at least one item of sensitive content within the received content, and determining at least one contextual factor. The method also includes, responsive to a determination to obfuscate the item of sensitive content based on the at least one contextual factor, displaying the item of sensitive content in obfuscated form. The method may also include, responsive to a determination to not obfuscate the item of sensitive content based on at least one contextual factor, displaying a non-obfuscated version of the item of sensitive content.

Confidential, proprietary, or otherwise sensitive content may be accessed using a variety of devices, both personal and professional. For example, an organization may store confidential documents in cloud/network storage or access confidential information using one or more Software-as-a-Service (SaaS) or remote desktop applications. An organization may grant its employees, contractors, agents, partners, or other persons associated with organization permission to access various types of content over the network, including word processing documents, spreadsheets, image files, text files, and Portable Document Format (PDF) files.

Context-aware obfuscation and unobfuscation of sensitive content