A thin wall metal beverage can is described having a converging shoulder portion merging into a neck portion, the top edge of which is folded to form a flange providing an annular abutment and with a threaded sleeve sliding into the neck portion, the sleeve having an annular rib or catch which snaps over the flange abutment holding the sleeve and can neck portion against relative axial movement.

1. Field of the Invention
This invention relates to thin wall metal beverage cans, and in particular to aluminum beverage cans having a threaded neck portion for receiving a threaded closure cap to seal the contents of the container.
2. Description of the Prior Art
Aluminum cans are now widely used in the packaging of beer, soft drinks, etc. and these are typically adapted to be closed with relatively flat lids or ends. Although the standard aluminum cans offer a number of advantages for the beverage suppliers, such as low cost, excellent barrier properties, recyclability, etc., there is at present a significant interest in reclosable/resealable cans for certain market segments. As an example, beverages supplied at gas stations or convenience stores, are preferably supplied in a reclosable (and preferably resealable) format. As a result, cans are rarely the container of choice at these outlets.
There have been many attempts to design a reclosable can, but so far, market penetration has been very limited. Generally the added cost of such modifications means that the package can only be considered for what are generally referred to as "high-end" beverages. For instance, a type of bottle can has recently been developed for use in the sale of premium beers. Such cans have, however, not penetrated the low cost soft drink market.
In order to be successful, a reclosable can must offer a number of benefits. It must, for instance, provide a shelf life comparable or better than that of the PET bottles. The closure must be easy to use and, ideally, after closing the seal should prevent any further loss of carbonation. Finally, the cost of the package must be acceptable in being no more than only slightly higher than current can costs.
One attempt to provide a can which may be reclosed and resealed is shown in Roth U.S. Pat. No. 4,452,368 issued Jun. 5, 1984.This design has a central plug which is pushed into a pour opening.
Another form of closable beverage can is shown in laid open German Application DE 198 02 953 A1, published Jul. 29, 1999.This design includes punching a hole in the center of the top of the can and fitting into this hole a resealable closure system with a screw cap.
PCT Publication No. WO 99/10242 published Mar. 4, 1999 shows yet another form of resealable can closure making use of a screw cap.
Dickhoff et al. U.S. Pat. No. 6,010,026 issued Jan. 4, 2000 shows a reclosable can that can be produced in a variety of different shapes, all with a threaded top for receiving a threaded closure cap.
It is an object of the present invention to provide an improved form of reclosable and resealable metal can design which functions well while being easy and inexpensive to produce.


A MRI RF coil array is formed from a first coil having a null B1 point and a quasi-one-peak sensitivity profile, and a second coil oriented with respect to the first coil to reduce coupling.

Magnetic resonance imaging (MRI) relies on the detection of the MR signal from abundant protons in the human body. A radio frequency (RF) receive coil is a device to effectively "pick up" the MR signal from the background of noise for image production. MR signals induced in a RF receive coil are weak signals due to the very small population difference between the two relevant proton energy states at room temperature. One of the challenges in RF coil design is to improve the MR signal detection sensitivity.
One of the approaches to improve signal detection sensitivity and/or field of view is to use multiple receive coils as an array. The basic idea is that instead of making a larger and less sensitive coil that covers the entire volume of interest, plural smaller and more sensitive coils are distributed over the volume of interest. Each individual coil picks up signal and noise from a localized volume. With separate detection circuitry, each coil element receives the image signal simultaneously. Signals from all the coils are finally combined and processed to reconstruct the MR image for the entire volume of interest.
The principle of MRI involves exciting protons and detecting the resulting free induction decay signals. Each proton possesses a tiny magnetic moment precessing about the static magnetic field. The macroscopic behavior of millions of protons can be represented by a resultant magnetization vector aligning with the static magnetic field B0. A strong RF excitation pulse effectively tips the magnetization away from B0. The free induction decay of this magnetization is detected in a plane perpendicular to B0. Thus, for maximal signal induction, the normal direction of a receive coil must be perpendicular to the direction of the static magnetic field B0.
Based on the direction of static magnetic field, commercial MRI systems are either horizontal or vertical. The so-called co-planar type coil arrays have proved to be effective for horizontal MRI systems for the reasons discussed in the previous paragraph. In a co-planar array, surface coils are arranged in a co-planar fashion and distributed over a volume of interest.
In general, such co-planar type surface coil arrays are not very effective for a vertical system because the condition required for maximal signal induction can hardly be fulfilled. Various modifications to the co-planar designs have been proposed with limited success.
It is known that solenoidal type coils have several advantages for a vertical field system, including its sensitivity, uniformity and its natural fit to various body parts. It is advantageous to utilize solenoidal based coil arrays for vertical MRI systems.
To successfully implement a solenoidal coil array, one must be able to isolate solenoidal coils of the array to prevent them from coupling to each other. This is required because all coils in a coil array typically receive signals simultaneously. "Cross-talk" between different coils is undesirable. Thus effective coil isolation is a major challenge in solenoidal coil array design.
A so-called sandwiched solenoidal array coil (SSAC) has been set forth in U.S. patent application Ser. No. 09/408,506. A SSAC consists of two solenoidal receive coils, a counter-rotational solenoidal coil and a second solenoidal coil sandwiched between the two counter-rotational winding sections of the first coil.
The counter-rotational solenoidal coil produces a gradient B1 field that has a double-peak "M" shape sensitivity profile. The second solenoidal coil produces a single-peak profile sandwiched between the two peaks of the "M" shape profile of the first coil.
The sensitivity profile of a SSAC is determined by the summation of an "M" shape double-peak profile and a centralized single-peak profile generated by the two coils. To avoid unwanted dark band artifacts in the array coil sensitivity profile, the geometric parameters of both coils must be set properly. This process is sensitive to the geometries at hand.

Uneven-counter-rotational coil based MRI RF coil array


A method for operating a turbocharger arrangement of an internal combustion engine, the turbocharger arrangement comprising a low-pressure and a high-pressure turbocharging stage arranged sequentially, the high-pressure turbocharging stage comprising a high-pressure compressor with a sensorless compressor bypass valve, comprises evaluating at least one sensor signal of the turbocharger arrangement for detecting a failure mode of the compressor bypass valve.

Internal combustion engines, in particular diesel and gasoline engines, are frequently equipped with turbochargers. Generally, turbochargers are driven by and placed in the exhaust flow of an internal combustion engine. The exhaust flow and/or the intake airflow are controlled by one or more bypass valves located in branches of the exhaust and/or intake system, and ensure that various constraints are respected, including exhaust composition, compressor outlet temperature and turbine inlet temperature, as well as avoiding turbocharger surge or overspeed. Bypass valves that are actively controlled usually have a default or "failsafe" position into which they move when there is no vacuum or electrical supply. The failsafe position normally is either fully open or fully closed. The default setting is determined by factors such as safety and engine power requirements at altitude. However, the compressor bypass valve may also fail and become stuck, for example, in the fully closed or fully open position. It would be desirable to detect such failure of the compressor bypass valve without a position feedback sensor and its associated increased cost and complexity.

This patent is subject to a terminal disclaimer.

Method for operating a turbocharger arrangement and control unit for a turbocharger arrangement


An array substrate for a liquid crystal display device includes a substrate, a gate line on the substrate, the gate line connected to a gate pad, a data line on the substrate, the data line connected to a data pad and crossing the gate line for defining a pixel region, a thin film transistor connected to the gate line and the data line, the thin film having a gate electrode and source and drain electrodes, a passivation layer having a first contact hole exposing the drain electrode, a second contact hole exposing the gate pad, and a third contact hole exposing the data pad, a black matrix on the passivation layer, a first conductive pattern covering the first contact hole, a pixel electrode on the passivation layer at the pixel region, the pixel electrode contacting the first conductive pattern, an auxiliary gate pad connected to the gate pad through the second contact hole, and an auxiliary data pad connected to the data pad through the third contact hole.

1. Field of the Invention
The present invention relates to a liquid crystal display, and more particularly, to an array substrate for a liquid crystal display device and a fabricating method thereof. Although the present invention is suitable for a wide scope of applications, it is particularly suitable for preventing a photocurrent generation and a signal delay in the liquid crystal display device.
2. Discussion of the Related Art
Flat panel display (FPD) devices having small size, lightweight, and low power consumption may have been a subject of recent research in the advent of the information age. Among many kinds of FPD devices, liquid crystal display (LCD) devices have been widely developed and used because of their excellent characteristics in resolution, color display, and display quality.
Generally, LCD devices include an upper substrate and a lower substrate facing into each other with liquid crystal molecules interposed therebetween. Each substrate has an electrode on the inner surface thereof. An electric field is generated by applying a voltage to the electrodes, thereby driving the liquid crystal molecules to display images in accordance with the light transmittance.
The lower substrate is referred to as an array substrate including a thin film transistor (TFT) that is formed through repeated deposition of thin films, photolithography, and an etch process. The upper substrate is referred to as a color filter substrate including a color filter layer that is formed through a dyeing method, a printing method, a pigment dispersion method, or an electro-deposition method. Three colors of red (R), green (G), and blue (B) are alternately disposed in the color filter layer.
FIG. 1 is a cross-sectional view of a conventional LCD device.
In FIG. 1, a gate electrode 12 of a conductive material such as metal is formed on a first substrate 11. A gate insulating layer 13 of silicon nitride (SiNx) or silicon oxide (SiO2) is formed on the gate electrode 12. An active layer 14 of amorphous silicon is formed on the gate insulating layer 13 over the gate electrode 12. An ohmic contact layer 15a and 15b of doped amorphous silicon is formed on the active layer 14. Source and drain electrodes 16a and 16b of a conductive material such as metal are formed on the ohmic contact layer 15a and 15b. The source and drain electrodes 16a and 16b form a TFT "T" with the gate electrode 12. The gate electrode 12 and the source electrode 16a are connected to a gate line (not shown) and a data line (not shown), respectively. The gate line and the data line cross each other and define a pixel region. A passivation layer 17 of SiNx, SiO2, or an organic insulating material is formed on the source and drain electrodes 16a and 16b. The passivation layer 17 includes a contact hole 17c exposing the drain electrode 16b. A pixel electrode 18 of a transparent conductive material is formed on the passivation layer 17 and connected to the drain electrode 16b through the contact hole 17c.
A second substrate 21 is disposed over and spaced apart from the first substrate 11. A black matrix 22 corresponding to the TFT "T" is formed beneath the second substrate 21. The black matrix 22 has an open portion (not shown) corresponding to the pixel electrode 18. The black matrix 22 prevents a light leakage at an LCD panel except for the pixel electrode 18 and a photocurrent generated by screening a channel of the TFT "T" from the ambient light. The black matrix 22 is formed in a color filter layer 23a and 23b. The color filter layer 23a and 23b having three colors of R, G, and B is alternately disposed. The color filter layer corresponds to the pixel region. A common electrode 24 of a transparent conductive material is formed beneath the color filter layer 23a and 23b. A liquid crystal layer 30 is interposed between the pixel electrode 18 and the common electrode 24.
The black matrix may prevent light from being leaked at an LCD panel except for the pixel electrode and photocurrent from being generated by screening a channel of the TFT from the ambient light. However, since the black matrix is spaced apart from the TFT, the black matrix does not shield the oblique incident light or a portion of the light reflected at the black matrix. Therefore, such light reaches the channel of the TFT, thereby generating a photocurrent. Moreover, the TFT becomes non-uniform in characteristics.
On the other hand, as LCD devices have larger size and higher resolution, a signal line becomes longer and narrower. Accordingly, a possibility of the signal delay increases. To reduce resistance of the signal line, a material of low resistivity such as aluminum (Al) or copper (Cu) is used for the signal line. Generally, a pixel electrode is formed of a transparent conductive material such as indium-tin-oxide (ITO). A contact resistance between ITO and Al is relatively high, and Cu is susceptible to an ITO etchant. Therefore, when Al or Cu is used for the signal line, an electrical short-circuit may occur at the contact portion between ITO and Al. Moreover, a signal may be distorted.

Array substrate for liquid crystal display device and fabricating method thereof


An electrophotographic printing apparatus includes a paper conveyor path, a photosensitive drum arranged on the paper conveyor path, a conveyor unit for conveying paper along the conveyor path, an image forming unit for forming an electrostatic latent image on the photosensitive drum, developing the electrostatic latent image by depositing a developer on the electrostatic latent image, and transferring the developer image onto paper, and a fixing unit, arranged on the paper conveyor path, for fixing the transferred image on the paper by heat and pressure. The printing apparatus further comprises a control circuit for detecting overheating of the fixing unit and commanding the conveyor unit to stop conveyance of paper after confirming that no paper is present in the fixing unit when the fixing unit is detected to be overheating.

1. Field of the Invention
The present invention relates to an eleotrophotographic printing apparatus for thermally fixing a transferred image on paper.
2. Description of the Related Art
A laser printer is a well known electrophotographic printing apparatus. This type of printer selectively exposes a charged photosensitive body by means of a laser beam to form an electrostatic latent image thereon, deposits toner to develop the formed electrostatic latent image, and transfers the toner image onto a sheet of paper. After transfer, the paper is conveyed to a fixing unit, and the toner image is fixed on the paper by heat and pressure applied thereto while passing through heat and pressure rollers of the fixing unit.
The controller of the laser printer generally measures the fixing temperature by means of a temperature sensor, and controls the power supplied from a heater driver to a heater of the heat roller in accordance with the measured temperature to maintain the fixing temperature at a predetermined level. When overheating of the fixing unit is detected, the controller cuts off the power supply to the heater and stops conveyance of paper.
Overheating is sometimes occurs as a result of failure of a power transistor provided in the heater driver. If such a causes the power transistor to stay ON, the power supply to the heater cannot be cut off even when overheating is detected. If paper is passing through the fixing at the time overheating is detected, the paper will be intensely heated in the fixing unit and may catch fire. Even if the paper does not catch fire, it may be burned to a degree where it adheres to the heat rollers and the pressure rollers. In such a case, not only must the heater driver be repaired, but the burned paper must also be removed from the heat rollers and the pressure rollers in order that they can function normally, resulting in time-consuming and expensive repairs.

Electrophotographic printing apparatus with fire prevention


The present invention provides a method of manufacturing a compound semiconductor device capable of improving yield when a wafer is divided into device regions. The method of manufacturing a compound semiconductor device includes a division step. The division step includes: a first division step of dividing a wafer 30 in a first direction α to obtain first strip wafers each having at least two rows of device portions 10 arranged in the first direction α; a second division step of dividing the first strip wafer in a second direction β to obtain second strip wafers each having a row of the device portions 10 arranged in the second direction β; and a third division step of dividing the second strip wafer into the device portions 10, thereby forming compound semiconductor devices including the device portions 10.

In recent years, a semiconductor light-emitting device, such as a p-n junction light-emitting diode (LED) or a laser diode (LD), has been known as a compound semiconductor device. In the light-emitting device, when a group-III nitride semiconductor (AlxGayInzN: 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z=1) is used for a light-emitting layer, it is possible to obtain a light-emitting device that emits near ultraviolet light, blue light, or green light. In the group-III nitride semiconductor light-emitting device, generally, a substrate is formed of an electric insulating sapphire (α-Al2O3) single crystal. However, the substrate may be formed of a silicon carbide (SiC).
The compound semiconductor device is generally manufactured by forming a wafer having a plurality of compound semiconductor devices arranged in a predetermined pattern on a substrate and dividing the wafer into compound semiconductor devices. In general, a die saw or a scriber is used to divide the wafer. The die saw cuts the wafer by rotating a disk-shaped blade (dicing blade) having a diamond tip. The scriber forms very fine linear grooves (scribe lines) in a wafer, for example, in a lattice shape using a diamond stylus and applies external force to divide the wafer.
However, when a semiconductor light-emitting device having an epitaxial layer made of a group-III nitride semiconductor formed on a sapphire substrate is manufactured, a large distortion occurs in the interface between the group-III nitride semiconductor layer and the sapphire substrate due to a large difference between the lattice constants of the group-III nitride semiconductor layer and the sapphire substrate. In addition, since the sapphire substrate has a hexagonal crystal structure, it does not have a cleavage property. Both the sapphire substrate and the group-III nitride semiconductor have a Mohs hardness of about 9, which is a very high level. Therefore, it is difficult to divide the sapphire substrate having the group-III nitride semiconductor light-emitting device structure formed thereon using the scriber to manufacture semiconductor light-emitting devices having a regular shape with high yield. When the sapphire substrate having the group-III nitride semiconductor light-emitting device structure formed thereon is divided by the die saw, a crack or chipping is more likely to occur in a cutting plane, and it is difficult to clearly divide the substrate. As a result, the group-HI nitride semiconductor layer is likely to be peeled off from the sapphire substrate.
Further, a scribing method using a laser beam has been proposed (for example, see Patent Documents 1, 2, and 3). When a laser beam is radiated onto a wafer for a group-III nitride semiconductor light-emitting device to form division grooves in the wafer, it is possible to improve yield or productivity, and effectively and clearly form division grooves.
Furthermore, it has been known that a wafer having a gallium nitride compound semiconductor formed on a sapphire substrate is curved due to the difference between the lattice constants or the thermal expansion coefficients of the compound semiconductor and the sapphire substrate (for example, see Patent Document 4).
[Patent Document 1] Japanese Patent No. 3449201
[Patent Document 2] JP-A-11-177137
[Patent Document 3] JP-A-2006-24914
[Patent Document 4] JP-A-06-283758

Compound semiconductor device and method of manufacturing compound semiconductor device


An apparatus for forming a field coil with a low load comprises a rotary table, a reel table to be turned together with the rotary table, six reel bars for guiding and winding a conductor into the coil according to the rotation of the rotary table, and six shaping units disposed alternately with the reel bars. The shaping units are radially movable on the rotary table. A groove-cam-type moving mechanism radially reciprocates, at a rate of one reciprocation per turn of the rotary table, the shaping units on the rotary table with predetermined phase shifts between the movements of the shaping units, thereby pushing the conductor stretched between the reel bars toward the center of the rotary table and shaping the conductor.

1. Field of the Invention
The present invention relates to an apparatus for forming a field coil used for a rotary electric machine.
2. Description of the Related Art
An apparatus for winding and forming a field coil is disclosed in, for example, Japanese Unexamined Patent Publication No. 54-99901.
FIG. 19 shows this kind of apparatus. In the figure, a rotary table 1 has a plurality of reels 2 that are radially movable on the rotary table 1. In FIG. 20, grooves 3 radially extend on the rotary table 1, to receive the reels 2, respectively. Each of the reels 2 has a back member 4 arranged on the back of the rotary table 1 and a connection member 5 passing through the groove 3, so that the reel 2 may move along the groove 3.
A rotary shaft (not shown) of the rotary table 1 rotatably supports a cam 6, which has arc grooves 7 as shown in FIG. 21. Each of the arc grooves receives a cam follower 8 fitted to the back member 4.
When the rotary table 1 is turned, a conductor is wound several times into a coil C1 having a hexagonal shape as shown in FIG. 22. Thereafter, shaping members 10 are pushed radially inwardly by hydraulic cylinders and the cam 6 is turned to move the cam followers 8, thereby pressing the coil C1 and forming a corrugated shape of the coil as shown in FIG. 24. When the coil is inwardly pressed by the shaping members 10, the cam 6 turns to inwardly move the reels 2 in synchronism with the shaping members 10 to form the coil. After the completion of the inward movement of the reels 2, tension springs (not shown) outwardly pull the reels 2. The shaped coil is removed and fitted to a stator core as shown in FIG. 25.
According to this conventional apparatus, the reels 2 must be moved in synchronism with the shaping members 10. This complicates the structure of the apparatus. In addition, shaping the conductor 9 after winding it several times requires a heavy load or large force to be applied to the wound conductor 9. In addition and to withstand the heavy load, large and sturdy rigid jigs must be used. This may increase the size of the apparatus and, hence, the facilities which hold such apparatus.

Shaping apparatus for forming a field coil


Bulk crystalline materials are annealed by introducing into them mechanical energy of sufficient intensity to create a large amplitude sound wave. The mechanical energy may be introduced into the material, for example, by laser ablation. Where the bulk crystalline material is a doped semiconductor, the process also electrically activates the material.

1. Field of the Invention
The present invention relates generally to the non-thermal annealing of crystalline materials, and more specifically to the mechanical annealing of crystalline materials.
2. Description of the Background Art
Semiconductor wafers must be annealed following ion implantation to activate dopants as well as to heal damage caused by ion bombardment. The thermal annealing procedures in use now tend to have detrimental side effects. For example, dopant diffusion smears the spatial sharpness of the vertical p-n junctions and degrades the lateral definition of device features. As is well known, implantation can significantly alter the transport properties of both extrinsic impurities and intrinsic defects, often increasing the diffusion coefficients by orders of magnitude. Segregation and gettering of the dopants are also known to occur during thermal annealing. Furthermore, undesirable impurities can be introduced from the surroundings and by diffusion from either the substrate or the top surface.
In some devices, thermal annealing is especially ineffective. An example is devices made from Hg.sub.1-x Cd.sub.x Te which is the leading material for mid-wave and long-wave infrared detectors. Whereas the first Hg.sub.1-x Cd.sub.x Te detectors were photoconductive, the drive toward 2D focal plane arrays (FPAs) with many discrete elements (e.g., 128.times.128) has led to the development of a second generation of pixelated photo-voltaic (PV) devices, which are bump-bonded to silicon CCDs for read-out and on-chip electronic processing. In order to achieve the required spatial patterning of N.times.N individual p-n junctions, many of the leading manufacturers currently employ a fabrication technology based on shallow-junction ion implantation. In the case of p-on-n photodiodes (presently the industry standard for most applications) arsenic or phosphorus ions are implanted into the top layer of the Hg.sub.1-x Cd.sub.x Te, which is initially undoped or lightly doped during epilayer growth.
It is universally found the Hg.sub.1-x Cd.sub.x Te is n-type immediately following bombardment, independent of which dopant species is implanted. The first goal of the anneal is therefore to reduce the n-type background by healing damage and activating the P or As ions. Before annealing only 1 in about 1000 dopant ions occupies a normal lattice site. Ideally, one would prefer that all of the dopants occupy Te sites, where they become single acceptors. However, even following a successful thermal anneal, the activation efficiencies for both p-type and n-type implants in Hg.sub.1-x Cd.sub.x Te tend to remain relatively low, typically about 10%.
A key feature of Hg.sub.1-x Cd.sub.x Te is the exceptional extent to which its properties are governed not only by the presence of extrinsic impurities, but also by stoichiometry. Hg vacancies are by far the most common type of acceptor in unintentionally-doped material. During a thermal anneal, the vacancy concentration can either increase or decrease significantly, depending on whether a Hg overpressure is employed, but it rarely remains fixed. Other native defects, including the majority of those resulting from implantation damage, are known to produce donors. It should be emphasized that thermal annealing strongly influences both the concentrations and spatial distributions of both p-type and n-type stoichiometry-induced defects. Thus even apart from considerations of the impurity activation, thermal history plays a crucial role in governing the detector's electrical properties. It is this extreme sensitivity to stoichiometry that makes it so difficult to maintain fine control over the doping levels and spatial delineations of the p and n junction regions of a Hg.sub.1-x Cd.sub.x Te photodiode. Although spatial redistribution of the implanted ions is much less of a concern when rapid thermal annealing (RTA) is employed, heat-induced changes in the concentration of stoichiometric dopants occur regardless of the time scale of the temperature increase. In particular, while it is often desirable to employ a light doping level in the undamaged n region of the device, type-conversion during the thermal anneal (even by RTA) makes it too difficult to maintain small net doping concentrations using conventional methods.
SIMOX is another example of a wafer that is difficult to anneal thermally. SIMOX is silicon with an insulating oxygen layer one micron below the surface. It is difficult to anneal thermally due to the loss of the thin layer during the thermal cycle. SIMOX is, therefore, an ideal candidate for mechanical annealing.
Mechanical energy may also be used to modify the physical properties of materials other than semiconductors. Examples include strain and stress relief, sintering of refractory materials, altering the magnetic properties of thin film surfaces, and the alteration of flux pinning in high temperature superconductors.

Non-thermal process for annealing crystalline materials

The United States of America as represented by the Secretary of the Navy


An image capturing apparatus detects an out-of-gamut region falling outside a predetermined color gamut in accordance with an image capturing condition or image generating parameter of a captured image. A monitor displays the detected out-of-gamut region along with the captured image from an imager to enable a user to easily select the color space most appropriate for the captured image at the time the image is captured. At the time the image is captured, the user selects the image capturing condition or image generating parameter most appropriate for the captured image in accordance with the color reproduction range of an output deice. From a recorded captured image, the user estimates the output result of the output device by displaying an out-of-gamut region in accordance with the image capturing condition or image generating parameter at the time the image is captured.

1. Field of the Invention
The present invention relates to image capturing apparatuses and methods, computer programs, and computer-readable recording media therefor, and more particularly relates to an image capturing apparatus and method, a computer program, and a computer-readable recording medium therefor for use in capturing an image of a subject and generating or reproducing image data from the captured image.
2. Description of the Related Art
A color-space selecting method for use in known image capturing apparatuses will now be described using an example of a digital camera.
In known digital cameras, an sRGB color space is generally used to record images since most output devices including monitors and printers are optimized for sRGB.
Nowadays, it is said that the color gamut that can be represented by the sRGB color space is narrow. In order to solve this problem, the following techniques, which are roughly classified into two types, are employed.
A first technique is to prevent generation of a clipping effect. A typical technique of this type is esRGB proposed by Hewlett-Packard and the like to extend the color gamut of sRGB.
For example, it is assumed that a luminance signal Y is created by:Y=0.3R+0.59G+0.11G  (1)
In this case, with respect to the luminance signal Y (Y=250), when increasing the chroma of a red hue, an R signal immediately reaches 255 and is not further increased no matter how hard it is tried to increase the chroma. Increasing the chroma by force produces a clipping effect where the R signal is clipped to 255. In the worse case, the hue may change, resulting in a color shift.
In contrast, esRGB has a luminance signal Y within the range of 0 to 255 (8 bits), whereas RGB signals are not limited to the range of 0 to 255. Specifically, esRGB extends the color gamut by allowing the R signal to be 256 or greater even when the luminance signal Y remains 250. In other words, esRGB extends the color gamut by allowing the individual RGB signals to be values other than 0 to 255.
The esRGB color space described above has just been proposed and has not been generally used yet.
A second technique employs a color space where the RGB tristimulus values are defined as values larger than those in sRGB. Such a color space may be, for example, NTSC (National Television System Committee), PAL/SECAM (Phase Alternate by Line/Sequential Couleur a Memoire), or Adobe RGB.
When an image recorded in a large color space, such as the above-described Adobe RGB, PAL/SECAM, or NTSC, is displayed on a regular sRGB monitor, the chroma is reduced to generate a less impressive image. In order to compensate for the reduction in the chroma, color space conversion must be performed. This requires additional processing and may cause conversion errors.
In order to avoid the necessity of color space conversion, the image must be displayed on an output device that is dedicated for each color space. Since Adobe RGB, PAL/SECAM, and NTSC represent extended color gamuts using the RGB signals within the range of 0 to 255, the accuracy with respect to the color gamut is more degraded than sRGB.
As described above, at present there is no color space that satisfies all factors. In such circumstances, as in high-end digital cameras, such as EOS-1D that has already been proposed by the assignee of the present invention, image recorders that can select a color space from among a plurality of color spaces are increasing in number.
When capturing an image of a subject in an extended color space by such a high-end digital camera, that is, when capturing an image of a subject with high chroma, NTSC or Adobe RGB is used to record the image. Otherwise, sRGB, which has high bit accuracy and which does not require subsequent color space conversion, is used. In this manner, the appropriate color space is selected and used in accordance with the application and/or the subject.
Similarly, one technique for adjusting the captured image to fit within the color gamut of the preset color space at the time the image is captured involves a method of adjusting image parameters. Specifically, for example, when capturing an image of a subject with high chroma, the image is captured with lower chroma and lower contrast (lower than the normal chroma and contrast). When capturing an image of a subject with low contrast and low chroma, the image is captured by increasing the contrast and chroma. In other words, the method adjusts the captured image to fit within the color gamut by changing image generating parameters, particularly tone and chroma parameters.
As in the case with the color space, this technique often requires additional retouching, after the image has been captured, for adjusting the contrast and chroma in accordance with the preferences of the person who has captured the image. It thus becomes necessary to appropriately select the contrast and chroma in accordance with the application and/or the subject.
As in the above-described method of adjusting the captured image to fit within the color gamut of the standard color space, a method is proposed for adjusting the color gamut of the captured image to optimally fit within the color reproduction range or color reproduction characteristics of an output device, such as a printer or a monitor. For example, when outputting an image of a subject with high chroma using a printer having a wide color reproduction range, the image remains unchanged and output as it is (with high chroma). In contrast, when outputting such an image using a printer having a narrow color reproduction range, the chroma and the contrast are suppressed and then the image is output. This technique is advantageous in a case in which the image is directly output without using a PC, e.g., in a case in which an image is captured by a camera and directly output from the camera to a specific printer.
Similarly, one technique for adjusting the captured image to fit within the color gamut of the preset color space at the time the image is captured is realized by a method involving changing the exposure. Specifically, for example, when an image of a subject with very high contrast is captured, high luminance portions and low luminance portions of the captured image are not transformed into gradations (tones). As a result, white elements in the high luminance portions and black elements in the low luminance portions are eliminated, causing color shifts. In order to capture an image whose high luminance portions fit within the color gamut, the exposure is reduced. In order to capture an image whose low luminance portions fit within the color gamut, the exposure is increased. This method is based on the fact that a color space has narrower color gamuts in high and low luminance portions and wider color gamuts in intermediate luminance portions. Such characteristics apply equally to a standard color space and to the individual color gamuts of devices and the like. This method requires the user to determine the exposure at the time the image is captured. The user must determine whether or not the captured image falls within the color space at the time the image is captured.
Using the above-described known technology, it is difficult to detect a color space that is most appropriate to a subject whose image is being captured. Therefore, it is very difficult to select the most appropriate color space.
In other words, with the above-described known technology, the user must use one color space and forget about the other wider color spaces, or the user must make efforts to perform color space conversion while accepting the accuracy degradation.
Similarly, when selecting the image generating parameters, it is difficult to select the most appropriate image generating parameters for a subject whose image is being captured.
Similarly, when selecting the most appropriate color space and image generating parameters for the color reproduction range and color reproduction characteristics of a specific output device, it is difficult to select the most appropriate image generating parameters for a subject whose image is being captured.
Similarly, when selecting the most appropriate exposure for the color reproduction range and color reproduction characteristics of a specific color space and/or a specific output device, it is difficult to select the most appropriate image capturing conditions for a subject whose image is being captured.

Image capturing apparatus and method, computer program, and computer-readable recording medium therefor


In an active matrix substrate for allowing a point defect of a defect pixel portion, among a plurality of pixel portions arranged two-dimensionally, to be repaired by radiation of energy, the active matrix substrate includes one of a first protection member for absorbing excessive energy power and preventing pieces of a conductive material from being scattered; and a second protection member for preventing pieces of a conductive material from being scattered and for preventing a conductive layer from bulging. One of the first protection member and the second protection member is provided above at least one energy radiation portion.

1. Field of the Invention
The present invention relates to a display apparatus such as a liquid crystal display apparatus capable of displaying a desired image on a display screen by applying a driving signal to each of a plurality of pixel electrodes arranged two-dimensionally via a corresponding switching device; a method for producing the same; and an active matrix substrate included in the display apparatus.
2. Description of the Related Art
Conventionally, this type of display apparatuses include, for example, liquid crystal display apparatuses, EL (electroluminescence) display apparatuses, and plasma display apparatuses. Such display apparatuses are capable of displaying a desired display pattern. (image) at high density on a display screen by, for example, selectively driving a plurality of pixel electrodes arranged in a matrix.
As a system for selectively driving the pixel electrodes, an active matrix system is known. According to the active matrix system, a plurality of pixel electrodes are arranged in a matrix (in rows and columns), and switching devices are respectively connected to the pixel electrodes. The pixel electrodes are selectively driven via a corresponding switching device. Generally known switching devices for selectively driving the pixel electrodes include, for example, TFTs (thin film transistors), MIM (metal-insulator-metal) devices, MOS (metal-oxide-semiconductor) transistors, and diodes. The above-mentioned type of display devices include a liquid crystal layer, an EL light emitting layer, a plasma light emitting element or various other types of display mediums interposed between the pixel electrodes and a counter electrode facing the pixel electrodes. The active matrix driving system is capable of realizing high contrast display and thus is practically used for liquid crystal TVs, computer terminal displays, and the like.
FIG. 32A is a plan view illustrating a single display unit of an active matrix substrate 100 of a conventional active matrix liquid crystal display apparatus. FIG. 32B is a cross-sectional view of a part of FIG. 32A taken along line X–X′. FIG. 32C is a cross-sectional view of a part of FIG. 32A taken along line Y–Y′.
In addition to the active matrix substrate 100 shown in FIGS. 32A through 32C, the conventional active matrix liquid crystal display apparatus includes a counter substrate facing the active matrix substrate 100 and a liquid crystal layer acting as a display medium. The active matrix substrate 100 includes a glass plate 10 is (FIGS. 32B and 32C), a plurality of gate bus lines 1 (scanning lines), and a plurality of source bus lines 2 (signal lines). The plurality of gate bus lines 1 and the plurality of source bus lines 2 are provided on the glass plate 10. The plurality of gate bus lines 1 are provided parallel to each other in a row direction at a prescribed distance from each other. The plurality of source bus lines 2 are provided parallel to each other in a column direction at a prescribed distance from each other. Thus, the plurality of gate bus lines 1 and the plurality of source bus lines 2 are arranged in a lattice. The source bus lines 2 may be perpendicular to, or may simply cross, the gate bus lines 1. A pixel electrode 3 (represented by the dashed line in FIG. 32A) is provided in each of the areas surrounded by the gate bus lines 1 and the source bus lines 2. Alternatively, the pixel electrode 3 may be provided at each of intersections of the gate bus lines 1 and the source bus lines 2. Thus, a plurality of pixel electrodes 3 (only one is shown in FIG. 32A) are provided in a matrix. Each pixel electrode 3 is formed of a transparent electrode.
As shown in FIG. 32A, two TFTs 4 each acting as a switching device are provided at portions branching from each gate bus line 1. As shown in FIG. 32B, the TFT 4 is provided on the glass plate 10 with a base coat layer 11 interposed therebetween. The TFT 4 includes a semiconductor layer 12 formed of silicon (Si). The semiconductor layer 12 includes a channel region 12a, source and drain regions 12c (e.g., formed of n+-Si), and LDD regions (e.g., formed of n−-Si) 12b. The source and drain regions 12c have impurities implanted thereto at a high concentration. The LDD regions 12b are interposed between the channel region 12a and the source and drain regions 12c, and have impurities implanted thereto at a low concentration. On the channel region 12a, a gate region 1a is provided with a gate insulating layer 13 interposed therebetween. The gate region 1a branches from the gate bus line 1. The gate region 1a is covered with the pixel electrode 3 with an interlayer insulating layer 14 and a resin layer 15 interposed therebetween. Although not shown, an alignment layer (PI) is provided on the pixel electrode 3, and the liquid crystal layer is provided in contact with the alignment layer.
Referring to FIG. 32A again, a storage capacitance bus line (storage capacitance line) 5 is provided along, and parallel to, each gate bus line 1. The storage capacitance bus line 5 is patterned in the same step as the gate line 1 and formed of a metal layer (gate metal). The storage capacitance bus line 5 includes a wide portion 5A. As shown in FIG. 32C, an extended semiconductor portion 12d which extends from the drain region 12c of the TFT 4 and is provided below the wide portion 5A with the gate insulating layer 13 interposed therebetween. The extended semiconductor portion 12d is connected to the pixel electrode 3 via a metal layer 6 (source metal layer) and a contact hole 6A. The source metal layer 6 is patterned in the same step as the source bus line 2. The contact hole 6A is formed in the interlayer insulating layer 14 and the resin layer 15. Thus, the extended semiconductor portion 12 acts as one storage electrode, and faces the wide portion 5A acting as the other storage electrode with the gate insulating layer 13 interposed therebetween. Thus, a storage capacitance is formed between the extended semiconductor portion 12d and the wide portion 5A.
The conventional active matrix liquid crystal display apparatus having the above-described structure has the following problems. In the case where, for example, a TFT 4 acting as a switching device is defective, the pixel electrode connected to the defective TFT 4 is not supplied with a signal voltage, which should normally be provided. The user recognizes this as a point-like pixel defect (hereinafter, referred to as the "point defect") on the display screen such a point defect significantly spoils the display quality of the liquid crystal display apparatus, and is a serious problem in terms of production yield.
The main causes of such a point defect are roughly classified into the following two typen.
One type of defect is an ON defect. An ON defect occurs when a pixel electrode 3 cannot be sufficiently charged with an image signal from the source bus line 2 during the time period in which the corresponding TFT 4 is selected by the scanning signal from the gate bus line 1. This is caused by, for example, a defect of the TFT 4. The other is an OFF defect. An OFF defect is caused when the charge provided to the pixel electrode 3 leaks during the time period in which the corresponding TFT 4 is not selected. This is also caused by, for example, a defect of the TFT 4.
The ON defect is caused by the defect of the TFT 4 as a switching device. The OFF defect occurs in two cases: (i) when an electric leak occurs through the TFT 4 as a switching device; and (ii) when an electric leak occurs between the pixel electrode 3 and the gate bus line 1/source bus line 2. In both the ON defect and the OFF defeat, the voltage applied between the pixel electrode 3 and the counter electrode (not shown) does not reach the level necessary for display. As a result, in the normally white mode (in which the light transmittance is maximum when the voltage applied to the liquid crystal layer is 0 V), the defective pixel is recognized as a luminous point; and in the normally black mode (in which the light transmittance is minimum when the voltage applied to the liquid crystal layer is 0 V), the defective pixel is recognized as a black point.
Such a point defect can be detected by an inspector with the naked eye as follows. When the active matrix substrate 100 including the TFTs 4 as switching devices and a counter substrate including the counter electrode are put together and a liquid crystal material is injected into the space between the two substrates, a prescribed electric signal (inspection signal) is applied to the gate bus line 1 and the source bus line 2. Then, a repair work is performed as follows. For example, the source bus line 2 and the pixel electrode 3 are melted to be shortcircuited, or the drain region (a part of the semiconductor layer) acting as the drain electrode of the TFT 4 is cut off from the TFT 4 to electrically separate the TFT 4 from the pixel electrode 3. Thus, the pixel electrode 3 is charged and discharged by a signal voltage from the source bus line 2 regardless of whether the corresponding gate bus line 1 is selected or non-selected. In this manner, the liquid crystal display apparatus fulfills the inspection criteria and can be shipped as being substantially equivalent to normal apparatuses.
Such a repair work of the defective pixel is performed by laser radiation (laser repair). For improving the possibility of success of the repair work, Japanese Laid-Open Publication No. 2000-81639, for example, proposes the following liquid crystal display apparatus. A portion which is to be cut by laser radiation is constricted, and the pixel electrode and the interlayer insulating layer are partially removed so as not to cover the constricted portion (laser radiation portion), as described in more detail below with reference to FIG. 33.
FIG. 33 is a plan view illustrating a schematic structure of one display unit of an active matrix substrate of the liquid crystal display apparatus disclosed in Japanese Laid-Open Publication No. 2000-81639.
As shown in FIG. 33, the active matrix substrate has three constricted portions: one is a constricted portion a in the drain region of the TFT 4; another is a constricted portion b in the extended semiconductor portion 12d, which faces the gate bus line 1 to form a storage capacitance, and still another is a constricted portion c in the vicinity of the gate region branched from the gate bus line 1. The pixel electrode 3 (hatched) is not provided on the constricted portions a through c. In another structure, the interlayer insulating layer is not provided on the constricted portions a through c. A portion 31 which is open at the center of the pixel electrode 3 is a contact portion through which the pixel electrode 3 and the extended semiconductor portion 12d are connected to each other.
In the case where, for example, the gate region 1a and the drain region of the TFT 4 are shortcircuited, the constricted portion a is out in the normally black mode and the constricted portion c is out in the normally white mode. Thus, the source region and the drain region are shortcircuited via the gate region 1a.
In the case where the pixel electrode 3 and another pixel electrode adjacent thereto are shortcircuited at point D1, the constricted portion a is cut in the normally black mode and the constricted portion a of the adjacent pixel electrode is cut in the normally white mode.
In the case where the extended semiconductor portion 12d and the gate bus line 1 corresponding to the adjacent pixel electrode are shortcircuited at point D2, the constricted portion b is out in the normally black mode. In the normally white mode, the constricted portion c is cut so as to shortcircuit the source region and the drain region of the TFT 4 via the gate region 1a, and the constricted portion b is cut.
By providing the constricted portions a through c, the width of the portions to be out is made thinner than the usual width. Thus, the portions are more easily cut, such that the repair can be performed easily. As described above, the pixel electrode 3 is not provided on the laser radiation portions. Therefore, the pixel electrode 3 is not deformed even when the portions to be repaired are out by laser radiation. This substantially avoids such a secondary defect that the pixel electrode 3 contacts the counter electrode (not shown) facing the pixel electrode 3 or the out surface of the portions to be repaired. Since pieces of the interlayer insulating layer generated by cutting do not adhere to the conductive pixel electrode 3, the counter electrode and the other electrodes do not easily form conductive contacts with each other, which avoids further defects. The structure in which the pixel electrode 3 is not provided on the laser radiation portions provides further advantage that the laser power is not absorbed by the pixel electrode 3 and thus the level of the laser power required for cutting is lowered. This decreases the risk of a defective display due to the disturbance of the alignment layers and the disturbance of the alignment of the liquid crystal molecules. In the case where neither the pixel electrode 3 nor the interlayer insulating layer are provided on the laser radiation portions, metal pieces resulting from the cutting do not adhere to the pieces of the interlayer insulating layer. This avoids the risk of re-leak of charges at the cut portions. The structure in which the interlayer insulating layer is not provided on the laser radiation portions provides the further advantage that the laser power is not absorbed by the interlayer insulating layer and thus the level of laser power required for cutting is lowered.
In order to efficiently perform laser repair of the above-mentioned point defect, it is necessary to accurately evaluate and adjust the laser radiation position, laser light intensity, laser size (size of the laser spot R), the number of times of irradiation with laser radiation, and the like. Even with such evaluation and adjustment, there still may occur leaks and other defeats due to pieces of conductive material being scattered around by excessive laser power or due to bulging of the conductive layer. Therefore, it is very difficult to realize a 100% success rate of laser repair. In order to perform the repair work more precisely and efficiently, it is important to avoid leaks or other defects.
Japanese Laid-Open Publication No. 2000-81639 constricts the portions to be cut such that these portions can be more easily cut, and partially remove the pixel electrode 3 and the interlayer insulating layer so as to eliminate the causes of the leaks. The constricted portions advantageously allow the cutting to be done at a lower laser power. However, this method requires additional steps of partially removing the transparent pixel electrode 3 and the interlayer insulating layer so as not to cover the laser radiation portions. This undesirably complicates the production method.

Active matrix substrate, display apparatus, and method for producing the same


An apparatus includes an interface and a processor. The interface may be configured to receive pixel data representing respective fields of view of two or more cameras arranged to obtain a predetermined field of view, where the respective fields of view of each adjacent pair of the two or more cameras overlap. The processor may be configured to process the pixel data arranged as video frames and perform a fixed pattern calibration for facilitating multi-view stitching. The fixed pattern calibration may comprise applying a pose calibration process to the video frames. The pose calibration process generally uses (i) intrinsic parameters, a respective translate vector, a respective rotation matrix, and distortion parameters for each lens of the two or more cameras and (ii) a calibration board to obtain configuration parameters for the respective fields of view of the two or more cameras. The pose calibration process may comprise changing a z value of the respective translate vector for each lens of the two or more cameras to at least one of a middle distance value and a long distance value while maintaining the respective rotation matrix for each lens of the two or more cameras unchanged.

Due to parallax, perfectly stitching images for all distances is not possible. If two images are well aligned, a relationship between the two images can be obtained from the parallax using a similar triangle:Parallax=Focal length*base line/distance.  EQ. 1From the above equation, it can be seen that the parallax is related to a camera system. Parallax is more apparent at a short distance than at long distances.
In a conventional calibration method, multi-view stitching calibration is based on calibration targets at specific distances from the camera lenses. After the calibration process, the images from the cameras will be stitched in the location of the target. At the position of the target, the parallax will be zero, but in other positions (e.g., near or far from the specific target distance), parallax should be the real parallax minus the parallax of the position of the target.
There are different stitching distance requirements for different camera systems (e.g., different lens/sensor/baseline). If customers want to use the same camera system to get stitching effect for different distances, they need to run the calibration process multiple times and put a calibration board at the distance of the target for every calibration run. Thus, the conventional process requires calibrating multiple times for every stitching position.
It would be desirable to implement fixed pattern calibration for multi-view stitching.

Fixed pattern calibration for multi-view stitching


A portable, rectangularly shaped tree seat for hunters and outdoorsmen that may be used to sit between the two trunks of a double trunk tree. The tree seat may then be secured in its elevated position by straps that encompass each trunk. To utilize the tree seat while on the ground, the device may be leaned against a tree trunk and secured to the trunk with a strap. The seat area may then be pivotably released from stowage to form a resting area for objects or a seating area for a user.

1. Field of the Invention
The present invention relates to tree seats and more particularly pertains to tree seats which may be utilized between the two trunks of a double trunk tree.
2. Description of the Prior Art
The use of tree seats of the type which are attachable to single tree trunks is well known in the prior art. By way of example, a tree seat that can be fastened to a single tree trunk may be seen in U.S. Pat. No. 4,113,058. This tree seat, which is representative of the prior art, includes a main body that may be attached to a tree by a chain which circumscribes the tree. Pivoting outward from the main body is a seat area that may be locked into a horizontal position so as to be used as a seat.
A similar tree seat may also be seen in U.S. Pat. No. 4,600,081 which encompasses the same basic idea of the foregoing patent but includes two spikes that are incorporated into the main body so as to engage the trunk of the tree thereby increasing the stability of the device.
The tree seats previously mentioned can only be attached to a single tree trunk and cannot be used to engage both trunks of a double trunk tree. In addition, the tree seats heretofore mentioned do not include the ability to be leveled when used near the ground. The vertical alignment of the attaching tree trunk dictates the alignment of the foregoing tree seats thereby necessitating the careful selection of a nearly perfect vertical attaching tree.
In this respect, the tree seat according to the present invention substantially departs from the conventional concepts and designs of the prior art, and in so doing provides an apparatus primarily developed for the purpose of sitting between the two vertical trunks of a double trunk.
Therefore, it can be appreciated that there exists a continuing need for new and improved tree seats which can be utilized between the two upwardly projecting trunks of a double trunk tree as well as in a level position on the ground. In this regard, the present invention substantially fulfills this need.


A light emitting device has a transparent substrate, a substantially transparent first electrode layer formed on the transparent substrate, a phosphor layer formed on the first electrode layer, a second electrode layer formed on the phosphor layer, an insulating layer formed on the second electrode layer, and a third electrode layer formed on the insulating layer. A hot electron is generated by the application of a voltage to the second and third electrode layers, and the light emitting device is energized to become luminuous by injecting the hot electron thus generated into the phosphor layer.

1. Field of the Invention
The present invention generally relates to thin film light emitting devices and, more particularly, is directed to a thin film light emitting device for use with a thin film color display apparatus or the like.
2. Description of the Related Art
As a thin film light emitting device, the development of an electroluminescence (EL) devices has been advanced so far. The conventional EL device has electrodes formed on both surfaces of a phosphor thin film and a voltage is applied to these electrodes to thereby make the phosphor become luminous.
A principle of so-called electric field radiation is considered as follows:
An electric field whose magnitude is large in the thickness direction of the phosphor thin film, e.g., electric field of about 10.sup.6 V/cm is generated in the phosphor thin film by the voltage applied to these electrodes. By this electric field thus generated, electrons of surface level of phosphoror of impurity level are emitted by a so-called tunnel effect to the conduction band. Further, hot electrons are generated by an acceleration of the electric field and the hot electrons strike radiation centers in the phosphor, whereby the radiation centers are set in an excited state by the reception of energy. Then, when the radiation centers return to a ground state, photons are emitted.
In such electric field radiation, when ZnS is employed as a host crystal of phosphor, efficient radiation is obtained in the radiation center of internal transition type such as the radiation center of Mn or rare-earth materials.
However, bright radiation is not obtained in the radiation center of donor acceptor pair type such as ZnS : Cu, Al or ZnS : Ag, Al which demonstrate high radiation efficiency by the excitation of electron beam.
Accordingly, in this kind of electric field radition type thin film light emitting device, light emitting elements of various colors, particularly a blue light emitting element cannot be obtained without difficulty in the prior art, which becomes a bottleneck in the application of this kind of thin film light emitting device to a thin film color video display apparatus.


A magnetic inductor for inducing a magnetic field and electromagnetic effects upon water passing through a conduit, the magnetic inductor having two semi-cylindrical halves, each half having a longitudinal channel such that when the two semi-cylindrical halves are juxtaposed, there is defined a throughbore for receipt of a water conduit, each semi-cylindrical half having a plurality of semi-annular permanent magnets positioned therein such that they form an annular ring permanent magnet when the two semi-cylindrical halves are juxtaposed about a water conduit.

1. Field of the Invention
A magnetic inductor having a plurality of semi-annular shaped permanent magnets positioned within a cylindrical housing formed of two semi-cylindrical halves defining a throughbore through said magnets and housing for wrapped engagement about a standard sized water pipe.
2. Description of the Prior Art
Water is a highly sensitive receptor to electromagnetic disturbances of long wavelengths such as that induced by permanent magnets. Attempts have been made to recover or increase the beneficial properties of natural water as far as possible by passing water through strong magnetic or electromagnetic fields or by submitting it to electrostatic discharges. Water thus treated offers a series of beneficial effects to living creatures, animal and vegetable, having a regenerating effect on cell structure. A magnetic field is responsible for inducing long waves that are absorbed by the molecular structure of water running through the field. Water submitted to this magnetic treatment appears to be very useful for human consumption and has no side effects, but rather, it is notable as a diuretic, disintoxicating agent, and offers some benefits for arthritic and rheumatic states.
While not all the benefits of subjecting water to a magnetic field have been accurately, scientifically documented, what has been documented is that the subjection of water to a magnetic field does provide some therapeutic properties without any known side affects. It is therefore of interest to provide for a magnetic inductor which is portable, and easily adaptable to existing plumbing systems such that it can be installed without extensive plumbing alterations.
The present invention is directed to such a magnetic inductor which is designed to be removably secured about an existing copper or metal water pipe as might be found under the sink or as part of the spigot for the sink.


A semiconductor pressure sensor according to the invention comprises a first semiconductor substrate and a second semiconductor substrate, disposed around the first substrate, so that signals obtained by the semiconductor pressure sensor under static or differential pressure conditions can be properly corrected and both static and differential pressures can be detected accurately and reliably measured on the same semiconductor substrates. Another object of the invention is provide a semiconductor pressure sensor which utilizes a single substrate with an aperture, which acts as a pressure overload stop mechanism, and which does not suffer from any effects of diaphragm deformation as a result of possible pressure overload.

1. Field of the Invention
This invention relates to a semiconductor pressure sensor and, more particularly, it relates to a highly sensitive semiconductor pressure sensor that sensitively detects signals generated under a static or differential pressure condition to accurately determine any static or differential pressure as well as a semiconductor pressure sensor that can be used under very high ambient pressure.
2. Description of the Related Art
Various pressure sensors are known, including semiconductor pressure sensors that are popularly used for differential pressure transducers.
A semiconductor pressure sensor comprises a thin diaphragm of a monocrystalline semiconductive material (e.g., silicon) having an excellent elasticity to accommodate any possible stress produced therein. By sensing the internal stress which is a function of the difference of the pressures applied to the both sides of the diaphragm, it generates and transmits an electric signal representing the difference of pressure.
FIGS. 1A and 1B of the accompanying drawings respectively illustrate a sectional view and a plan view of a conventional semiconductor pressure sensor.
Referring to FIG. 1A, the semiconductor pressure sensor 100 comprises a thin diaphragm 117 made of a monocrystalline silicon substrate 110 having n-type surfaces and formed with a cavity 115 on a side. Such a semiconductor pressure sensor is normally prepared by diffusing a p-type impurity substance on the surface opposite to the one having the cavity 115 to form differential pressure sensors (resistors of a strain gauge) 136A through 136C, forming thereafter a film of an oxide 161 on the semiconductor substrate 110 to cover said differential pressure sensors 136A through 136C and electrically connecting with wires the opposite ends of each of the differential pressure sensors 136A through 136C to respective electrode layers 164 by way of respective holes 162 cut through the oxide film 161. The semiconductor pressure sensor is secured to a hollow and tubular seat 120 and the electrode layer 164 is electrically connected to external terminals (not shown) by wires 163 constructed such as metal wires when used.
Referring now to FIG. 1B, while electrode layers 164 are shown only for the differential pressure sensors 136A through 136C located on the right half of the substrate, such electrode layers 164 are actually formed for all the differential pressure sensors 136A through 136C on the substrate 110.
When the diaphragm 117 of a semiconductor pressure sensor 100 having a configuration as described above is put under stress due to pressure applied thereto, of the differential pressure sensors 136A through 136C formed on the surface of the diaphragm 117, the resistance of only those differential pressure sensors having crystal axes disposed in a certain given direction is raised, whereas the resistance of all the other differential pressure sensors whose crystal axes are arranged in other predetermined directions decreases. Then, the output voltage of a Wheatstone bridge circuit (not shown) constituted by these differential pressure sensors 136A through 136C changes as a function of the change in resistance and a detection signal representing the difference of the output voltage before and after the change is transmitted from it.
A semiconductor pressure sensor 100 of the above described type can generate erroneous signals even when it is subjected to static pressure (pressure commonly applied to the both surfaces of the diaphragm), a phenomenon called a zero shift error.
In a solution that has been proposed for getting rid of zero shift errors, an additional pressure sensor device is used to detect the static pressure applied to it and compensate therewith the output of the semiconductor pressure sensor 100.
This solution, however, requires two sensor devices and, therefore, additional cost. It may be needless to say that a semiconductor pressure sensor that comprises only a single sensor device and still can generate an additional set of signals for correcting the first set of signals is, if realized, by far preferable.
Such a semiconductor pressure sensor is actually known and comprises sensors (static pressure sensors) for detecting strain that may be generated by static pressure. The sensors are arranged on the upper surface 110A of a silicon monocrystalline substrate 110 just as the differential pressure sensors 136A through 136C of a semiconductor pressure sensor as described above so that the outputs of said differential pressure sensors 136A through 136C may be corrected by the corresponding outputs of the static pressure sensors.
The static pressure sensors of such a semiconductor pressure sensor 100 are arranged on a single and same substrate commonly used for differential pressure sensors 136A through 136C to form a pattern of arrangement corresponding to that of the differential pressure sensors 136A through 136C in order for the static pressure sensors to be influenced by ambient temperature in a manner exactly same as the manner in which the differential pressure sensors are affected by ambient temperature. This means that the static pressure sensors are also affected by differential pressure induced strain and, therefore, the output signals of the semiconductor pressure sensor are not necessarily unequivocal and do not always show same response characteristics and the output signals of the static pressure sensors by turn need to be corrected by those of the respective differential pressure sensors, requiring very complicated operations for correction.
In other words, the above described method of correcting the signals of differential pressure sensors by those of static pressure sensors can give rise to large errors.
FIGS. 2A and 2B illustrate another conventional semiconductor pressure sensor which is used for a differential pressure transducer. The components of the semiconductor pressure sensor of FIGS. 2A and 2B that are similar to those of its counterpart of FIGS. 1A and 1B are indicated by same reference numerals and will not be described any further.
The semiconductor pressure sensor 100 of FIGS. 2A and 2B has a cylindrical cavity 115 cut from a surface thereof and is secured to a tubular seat 120 at the side of the cylindrical cavity 115. A pressure guide path 125 is formed in the tubular seat 120 to transmit the applied pressure to the cylindrical cavity 115.
The semiconductor pressure sensor 100 comprises a thin diaphragm section 117 located above the cylindrical cavity 115. The diaphragm section 117 is provided with a pair of radially aligned strain sensors 135A, 135B and another pair of strain sensors 130A, 130B disposed on a radial line perpendicular to the line connecting the sensors 135A, 135B and disposed perpendicular to the line connecting them. The sensors are arranged on the surface of the diaphragm 117 opposite to the one where the cylindrical cavity 115 is formed. The sensors 130A, 130B, 135A, 135B are differential pressure sensors for sensing the difference between the pressures applied to the opposite surfaces of the thin diaphragm 117. The differential pressure sensors and static pressure sensors are in fact stress sensors having certain piezoelectric resistance values that vary as a function of the change in the internal stress of the semiconductor chip. The differential pressure sensors are so wired as to form a bridge circuit that transmits a signal representing the difference between the pressures applied to the opposite surfaces of the thin diaphragm section 117.
Pairs of static pressure sensors 140A, 140B, 145A, 145B are arranged on the substrate where the differential pressure sensors are located in order to detect any strain that may be present under a static pressure condition and show a pattern of arrangement corresponding to that of the differential pressure sensors. Here, a static pressure condition means a condition where the two opposite surfaces of the diaphragm are subjected to a same and equal pressure and, therefore, no differential pressure is existent. The static pressure sensors and the differential pressure sensors are in fact stress sensors that are mutually connected to form a bridge circuit.
A semiconductor pressure sensor having a configuration as described above generates and transmits a differential pressure detection signal whenever the differential pressure sensors detect any strain produced in the thin diaphragm section 117. However, the differential pressure sensors sense strain which is produced in the thin diaphragm section 117 under a static pressure condition. In order to avoid this problem, the differential pressure detection signal is corrected by a signal obtained from the static pressure sensors that sense strain produced in the thin diaphragm section only under a static pressure condition.
A semiconductor pressure sensor as described above can be used for measurement of not only differential pressure but also pressure of other types. A static pressure condition can be obtained when such a semiconductor pressure sensor is placed in an atmosphere whose pressure is to be measured. Then, the pressure can be determined from the signals obtained from the static pressure sensors 140A, 140B, 145A, 145B.
A pressure sensor of the above described type, however, does not necessarily provide unequivocal signals for a stress field that appears in the diaphragm of the pressure sensor. Besides, the thin diaphragm can be damaged when large pressure that exceeds the rated pressure is applied thereto.
As described above, any conventional semiconductor pressure sensors can hardly provide unequivocal and reproducible linear signals and can be damaged when it is subjected to excessively large pressure.
Laid Open Japanese Patent Application No. 54-51489 and U.S. Pat. No. 4,530,244 discloses technologies related to semiconductor pressure sensors of the above described types.


A cold drawn carbon steel filament has a surface with traces of bismuth. The steel filament can be used as a sawing wire or as part of a steel cord. During its manufacturing the steel filament has been subjected to a controlled cooling by bringing the steel filament in contact with bismuth. Bismuth may replace lead without harming the environment.

High-carbon cold drawn steel filaments are known in the art. Cold drawing is applied to obtain the final diameter and to increase the tensile strength of the steel filament. The degree of drawing is, however, limited. The higher the degree of drawing, the more brittle the steel filament and the more difficult to reduce further the diameter of the steel filament without causing too much filament fractures. Commercially available wire rod diameters are typically 5.50 mm or 6.50 mm. Direct drawing from wire rod until very fine diameters is not possible.
The above-mentioned limited degree of drawing is the reason why the various drawing steps are alternated with one or more intermediate heat treatments. These heat treatments "reorganize" the internal metal structure of the steel filaments so that further deformation is possible without increase in the frequency of filament fractures. The heat treatment is mostly a patenting treatment, i.e. heating until above the austenitizing temperature followed by cooling the steel filament down to between 500° C. and 680° C. thereby allowing transformation from austenite to pearlite.
The prior art has provided several ways for carrying out the cooling phase and the transformation from autenite to pearlite.
The cooling phase or transformation phase may be carried out in a bath of lead or a lead alloy, such as disclosed in GB-B-1011972 (filing date 14 Nov. 1961). From a metallurgical point of view, this is the best way for obtaining a proper metal structure for enabling further drawing of the steel wire. The reason is that having regard to the good heat transfer between the molten lead and the steel wire, the transformation from austenite to pearlite is more or less isothermal. This gives a small size of the grains of the thus transformed steel wire, a very homogeneous metallographic structure and a low spread on the intermediate tensile strength of the patented wire. A lead bath, however, may cause considerable environmental problems. More and more, legislation is such that lead is forbidden because of its negative impact on the environment. In addition, lead may be dragged out with the steel wire causing quality problems in the downstream processing steps of the steel wire. Hence, since a number of years, there has been an increasing need to avoid lead in the processing of steel wires and to have alternative transformation or cooling methods.
EP-A-0 181 653 (priority date 19 Oct. 1984) and EP-B1-0 410 501 disclose the use of a fluidized bed for the transformation from austenite to pearlite. A gas which may be a combination of air and combustion gas fluidizes a bed of particles. These particles take care of the cooling down of the steel wires. A fluidized bed technology may give the patented steel wire a proper metal structure with fine grain sizes and a relatively homogeneous metallographic structure. In addition, a fluidized bed avoids the use of lead. A fluidized bed, however, requires high investment costs for the installation and high operating or maintenance costs.
The austenite to pearlite transformation may also be done in a water bath such as disclosed in EP-A-0 216 434 (priority date 27 Sep. 1985). In contrast with fluidized bed technology, water patenting has the advantage of low investment costs and low running costs. Water patenting, however, may give problems for wire diameters smaller than 2.8 mm. The reason is that the heat content of a steel wire is proportional to its volume and the volume of a steel wire is proportional to d2, where d is the diameter of the steel wire:heat content=C1×d2
The surface of a wire is proportional to its diameter d:surface=C2×d
As a result, the cooling speed which is proportional to the surface and inversely proportional to the heat content, is inversely proportional to the diameter d:cooling velocity=(C2×d)/(C1×d2)=C3/d
The consequence is that fine steel wires are cooled too fast, which increases the risks for formation of bainite or martensite.
EP-0 524 689 (priority date 22 Jul. 1991) discloses a solution to the above-mentioned problem with water patenting. The cooling is done by two or more water cooling periods alternated with one or more air cooling periods. The cooling speed in air is not that high as in water. By alternating water cooling with air cooling the formation of bainite or martensite is avoided for steel wires with a diameter greater than about 1.10 mm. As with water patenting, this water/air/water patenting is cheap in investment and cheap in maintenance costs. However, a water/air/water patenting method also has its inherent limitations. A first limitation is that for very fine wire diameters, the smallest water bath may also cause risk for bainite or martensite formation. A second limitation is that the water/air/water patenting result in a metal structure which is too soft, i.e. with grain sizes which are greater than the grain sizes obtainable with lead patenting or with fluidized bed patenting. This soft structure is featured by a reduced tensile strength. In addition, the metallographic structure is not so homogeneous and the spread on the intermediate tensile strength of the patented wire may be high.
Cancelling all water baths and using only air patenting is an option with the advantage that the risk for formation of bainite or martensite is not existent or very limited. However, air patenting leads to even softer and more inhomogeneous metal structures than water patenting or water/air/water patenting.
The above prior art illustrates that there is a need for an environment friendly way of continuous and controlled cooling of steel wire which gives intermediate steel wires with a high intermediate level of tensile strength of the patented wire, a small grain size and a homogeneous metallographic structure.


Disclosed in the present application are a compound represented by formula (I), or a pharmaceutically acceptable salt, a tautomer thereof, a stereoisomer thereof, or a geometrical isomer thereof, and uses thereof in the preparation of drugs for treating or preventing multiple myeloma.

Multiple myeloma (MM) is a malignant proliferative disease of plasma cells which is characterized by the abnormal proliferation of clonal plasma cells in the bone marrow, the destruction of hematopoietic function, the stimulation to bone to lead to the occurrence of osteolytic bone lesions, and the presence of monoclonal immunoglobulin or its fragment (M protein) that is detectable in serum and/or urine. Its clinical manifestations are bone pain, anemia, hypercalcemia, renal impairment, infection, bleeding and so on. Bortezomib is a reversible proteasome inhibitor that achieves the goal of treating multiple myeloma by promoting the apoptosis of myeloma cells. However, in the long-term treatment process, some patients with multiple myeloma have developed resistance to bortezomib. Therefore, there is still a need for a new and safe drug for the treatment of multiple myeloma.

CHIA TAI TIANQING PHARMACEUTICAL GROUP GO., LTD.


A heat exchange system and apparatus for a vehicle powertrain configured to exchange heat between a first fluid and a second fluid within a heat exchanger core formed by a plurality of stacked plates having separate channels for the first fluid and the second fluid. The heat exchanger system includes multiple heat exchangers, one of which is connected to a both the inlet and the outlet of a vehicle powertrain component, another of which is fluidly connected or at least partially disconnected from the vehicle component according to the mode of operation of the heat exchange system. The heat exchanger connected to the vehicle component includes a jumper tube to return the first fluid to the vehicle component through a core of the heat exchanger.

The invention relates to vehicle powertrain heat exchangers and vehicle heat exchange systems for regulating the temperature of vehicle components depending on vehicle conditions and the temperature of heat exchanger fluids.
Vehicle heat exchange systems regulate the temperature of vehicle fluids and vehicle components to improve vehicle performance and provide a comfortable environment for vehicle passengers. Fluids circulate between heat exchangers and other vehicle components to cool a component, for instance, by cooling fluid, or to cool the fluid itself to maintain fluid properties. At certain times, such as vehicle start-up or in cold weather, cooling such fluids is not desirable, and the heat exchanger is not needed. Thermal control valves have been typically used between a heat exchanger and a vehicle component, then, to control the temperature of such fluids by controlling the amount of the fluid that circulates through the heat exchanger.
Such heat exchange systems include, among others, heat exchangers for engines, transmissions, electric vehicle batteries, and the fluids for these components. Oftentimes packaging for vehicle heat exchangers is one of the challenges encountered. Further, the demands on heat exchangers are becoming greater, as vehicle component performance requirements increase and cooling and heating needs increase with electric vehicles.


A method and apparatus for increasing the capacity of a remote terminal cabinet and providing customer premise service interfaces to the remote cabinet which otherwise has insufficient additional physical slots to support such interfaces is described. The method features removing any protective covering from a space previously designated for but lacking a protection block equipment and installing in the space interface equipment. The installation includes securing the equipment physically in place and connecting the equipment for communications with a distribution service, such as T1 carrier service, at a first interface and a plurality of customer premise service interfaces, such as ISDN BRI interfaces, to customer premises lines at a second interface. The remainder of the remote cabinet communications is left unaffected.

The invention relates generally to providing a customer premise service to customers who are not easily reachable with that service from a central office or remote terminal supporting the service.
As customer premise services, such as ISDN basic rate interface service, expands substantially, it often occurs that T1, on either fiber optics or copper, extends to a remote terminal cabinet, but that the cabinet itself is operating at full capacity and does not have the additional shelf space to provide further customer premise services, such as ISDN BRI loops or service, to new or existing customers, or that the cabinets do not have three empty adjacent slots which would make it relatively easy to add, for example, additional service. As a result, either additional remote terminal cabinets must be built and integrated into the system, or the shelf must be rearranged, (moving existing subscribers to other time/physical slots thus requiring substantial labor and coordination with the central office) or the new ISDN service is not available.
The problem of providing ISDN service to remote customers is exacerbated by the continuing and increasing demand for the service itself. Thus, various new technologies either require ISDN or equivalent service, such as, for example, video conferencing, wideband data services, lottery services, etc. The telephone companies, however, while having substantial remote terminal cabinets available to them, spaced from the central office, find that those remote terminals are already full and have no additional shelf space to provide further ISDN or POTS service or requiring grooming of the cabinet. (A typical ISDN line requires three time slots on a T1 line and often requires three physical slots in the cabinet.) As a result, the telephone companies are faced with substantial capital expenses relating to the addition of further remote terminal cabinets or substantial labor costs. It is thus not a simple matter to add a remote terminal, since those cabinets are not only large and expensive, but also must be appropriately mounted and fixed for permanent use.
Accordingly, the invention provides a method and apparatus for advantageously increasing the capacity of remote terminal cabinets even though, at first blush, the cabinets appear to already be full or otherwise not able to provide the card slots needed to provide such service. Other objects of the invention are an economical and practical method and apparatus for increasing the ISDN capability of a remote cabinet without sacrificing or reducing any other service being provided by the remote cabinet.

IDSN capacity expansion for remote terminal sites


A lithium-ion rechargeable battery negative electrode active material and a preparation method thereof, a lithium-ion rechargeable battery negative electrode plate, and a lithium-ion rechargeable battery are provided. The negative electrode active material includes a carbon core and a coating layer formed on a surface of the carbon core, a material of the coating layer includes amorphous carbon and a doping element, and the doping element includes element nitrogen. The lithium-ion rechargeable battery negative electrode active material has the carbon core, and the coating layer that includes the doping element and the amorphous carbon is provided on the surface of the carbon core.

Currently, with rapid development of electronic technologies, electronic products have become necessities in people's life. However, an improvement speed of battery energy densities is far behind a development speed of the electronic technologies. Therefore, the low battery energy density becomes one of bottlenecks of the electronic products, Fast charge is a popular technology that attracts more attention in recent one or two years and that greatly improves user experience.
A negative electrode material is one of the most critical materials for fast charging a lithium-ion battery. However, an existing frequently-used common carbon negative electrode material has poor high-current charge/discharge performance, affecting fast charge performance of the lithium-ion battery, especially a fast charge capability at a low temperature. Therefore, to improve user experience and improve fast charge performance of a lithium-ion battery, especially fast charge at a low temperature, it is necessary to provide a lithium-ion battery negative electrode material that has a high energy density and a high-rate charge/discharge characteristic, especially a fast charge capability at a low temperature.

Lithium-ion rechargeable battery negative electrode active material and preparation method thereof, lithium-ion rechargeable battery negative electrode plate, and lithium-ion rechargeable battery


An electrophotographic image forming apparatus, including a photoreceptor, a charger charging the surface of the photoreceptor, an irradiator irradiating the surface of the photoreceptor with imagewise light to form an electrostatic latent image thereon, an image developer developing the electrostatic latent image with a developer including a toner to form a toner image on the surface of the photoreceptor, and a transferer transferring the toner image onto a transfer material, wherein the photoreceptor includes an electroconductive substrate, and a photosensitive layer overlying the electroconductive substrate and including a charge generation material and a specific charge transport material.

1. Field of the Invention
The present invention relates to an electrophotographic image forming apparatus using a photoreceptor including a specific charge transport material, and to a process cartridge including the photoreceptor.
2. Discussion of the Background
Recently, development of information processing systems utilizing electrophotography is remarkable. In particular, optical printers in which information converted to digital signals is recorded using light have been dramatically improved in print qualities and reliability. This digital recording technique is applied not only to printers but also to copiers, and so-called digital copiers have been developed and used. Copiers utilizing both the conventional analogue recording technique and this digital recording technique have various information processing functions, and therefore it is expected that demand for such copiers will be escalating. In addition, with popularization and improvement of personal computers, the performance of digital color printers which can produce documents.
In place of conventional inorganic materials such as Se, CdS and ZnO as photoconductive materials for electrophotographic photoreceptors, organic photoconductive materials having better sensitivity, thermostability and nontoxicity than the inorganic materials are now prevailing. Most of the electrophotographic photoreceptors using the organic photoconductive materials have functionally-separated photosensitive layers formed of charge generation layers including charge generation materials and charge transport layers including charge transport materials.
On the other hand, a single-layered photoreceptor including a charge generation material and a charge transport material in a single photosensitive layer now attracts attention because it can be prepared by a simple process, optical properties improve due to fewer layer interfaces and it can be used for either a positive or a negative charging process.
Typically, an electrophotographic image forming apparatus irradiates writing light modulated by image data onto a uniformly charged photoreceptor to from an electrostatic latent image thereon; and provides a toner to the photoreceptor from the image developer to develop the electrostatic latent image to form a toner image thereon.
As charging methods in the electrophotographic image forming apparatus, a corona charging method using a metallic wire and contact charging method contacting a charging roller to the photoreceptor, etc. are known.
The contact charging method produces less oxidizing gases such as ozone and NOx than the corona charging method because a lower voltage can be applied to the charging member of the contact charging method than that applied to that of the corona charging method. However, the contact charging method having high discharge energy gives a large stress to a photoreceptor and the photoreceptor is abraded faster, has poor charge followability when the process linear speed becomes faster and the photoreceptor tends to have discharge breakdown because a high voltage is directly applied thereto.
The corona charging method having good charge following capability and less electrostatic stress to a photoreceptor, and therefore is advantageous for higher speed and durability of the apparatus, but produces more oxidizing gas such as ozone and NOx (about 100 times as much as that produced by the contact charging method).
When a photoreceptor is exposed to an oxidizing gas such as ozone and NOx, a charge generation material and a charge transport material in a photosensitive layer thereof are oxidized, which causes decrease of chargeability, increase of residual potential and deterioration of sensitivity thereof, resulting in production of images having low image density and foggy images.
In order to solve these problems, Japanese Laid-Open Patent Publication No. 57-122444 discloses a method of including an antioxidant in the photosensitive layer. However, when an antioxidant is included therein, there are adverse effects of increase of residual potential and deterioration of sensitivity thereof from the beginning or when repeatedly used, resulting in insufficient durability thereof.
Because of these reasons, a need exists for a photoreceptor without deterioration such as decrease of chargeability due to an oxidizing gas which is massively produced when the corona charging method is used, which is capable of preparing a high-speed and high-durability electrophotographic image forming apparatus.

Electrophotographic image forming apparatus and process cartridge


A device for positioning a trouble light to cast light on a desired work area utilizing an adjustable rotational friction mechanism, and a support plate having a flat surface on its periphery and a hook rigidly attached to the support plate.

1. Field of the Invention
The invention relates generally to a device to allow a trouble light to be easily positioned in a work environment to cast light on the area needing to be lighted.
2. Description of the Prior Art
Currently, trouble lights are not designed to allow the worker to easily position the trouble light in a work environment. Many trouble lights have rigid hooks at the top or hooks which are difficult to rotate. Trouble lights currently have bulb guards which are of a fixed design and cannot be easily positioned to cast light where necessary.