An image forming apparatus has a compact size in height. The apparatus includes a main frame, a plurality of image forming components arrayed in the main frame in an array direction to form an image, a belt extending in the array direction and in contact with the plurality of image forming components, a first sheet accommodating portion configured to accommodate therein a recording sheet, and extending in the array direction and positioned below the belt, a collection member disposed in contact with the belt and configured to collect developing agent on the belt, and a container configured to hold the developing agent collected by the collection member. The container is positioned below the belt such that the container is juxtaposed with the first sheet accommodating portion in the array direction.

A conventional image forming apparatus is provided with a belt cleaner. More specifically, the image forming apparatus has a belt in contact with a photosensitive body, and the belt cleaner is adapted to collect toner deposited on the belt. The belt cleaner positioned immediately below and in contact with the belt which is positioned above a sheet supply tray or a sheet cassette. That is, the belt cleaner is positioned between the sheet supply tray and the belt.

Image forming apparatus having reduced height


A computer readable medium containing program instructions for controlling a parametric equalizer is provided. Generally, a computer readable code is provided for displaying a composite equalization curve, wherein the composite equalization curve is formed from at least a first frequency filter with a first center frequency, a second frequency filter with a second center frequency, and a third frequency filter with a third center frequency. A computer readable code is provided for allowing a dragging movement of the first center frequency, the second center frequency, and the third center frequency.

In sound systems, an equalizer is used to boost or cut certain frequency components in a signal to provide a desired sound from the sound system. Such sound effects may be bringing out a particular instrument's sound or providing a more realistic sound. Two common types of equalizers for sound systems are graphic equalizers and parametric equalizers.
FIG. 1 is a schematic view of a graphic equalizer system 100. A graphic equalizer system 100 comprises a plurality of bandpass filters 120, 124, 128 connected in parallel. Each bandpass filter allows a component of a signal within a bandpass filter frequency range to pass through the bandpass filter. Each component is then amplified by amplifier 130 associated with the bandpass filter. The components are then added together by adders 132. Often a slider board is used to set the amplifiers associated to the bandpass filters. FIG. 2 is a schematic view of a slider board 200 for a graphic equalizer. The slider board 200 has a plurality of sliders 204, where each slider controls an amplifier 130. Often the sliders 204 may be placed in a curved configuration as shown in FIG. 2 to provide a curved equalization, where the middle frequencies are amplified more than the outer frequencies. The sliders 204 may be placed in other configurations to provide other equalizer configurations.
Parametric equalizers are equalizers which may provide more flexibility than a graphic equalizer. A single parametric equalizer allows not only the setting of boost or cut, but also the center frequency and the bandwidth. An example of a parametric equalizer is the TAS3001C Stereo Audio Digital Equalizer chip set by Texas Instruments™. The TAS3001C may provide six parametric equalizer filters. The filters may be placed serially. The parametric equation for each filter may be:
      H              (      z      )        =                    b        0            +                        b          1                                  z                      -            1                              +                        b          2                                  z                      -            2                                      1      +                        a          1                                  z                      -            1                              +                        a          2                                  z                      -            2                              Five coefficients b0, b1, b2, a1, and a2 may be provided to the parametric equation to define the center frequency and bandwidth of the filter. The coefficients may be provided in a format providing 4 bits for an integer part of the coefficient and 20 bits for a fractional part of the coefficients. One method of providing center frequencies and bandwidths to the filters is by placing numbers in a spreadsheet. The coefficients would be derived from the numbers in the spreadsheet and sent to the filters. From the resulting sound, a new set of numbers may be submitted. Through trial and error, a preferred set of center frequencies and bandwidths may be found.
It would be desirable to provide an improved interface for an equalizer.


A method of manufacturing a display panel includes: a first step of forming a partition wall layer above a substrate; a second step of exposing the partition wall layer using a first photomask that has a mask pattern corresponding to a blue opening; a third step of exposing the partition wall layer using a second photomask that has a mask pattern corresponding to a red opening and a green opening; a fourth step of forming a partition wall by removing the partition wall layer to form the red opening, the green opening , and the blue opening in the partition wall layer; and a fifth step of forming a light emitting layer in each opening.

In a display panel such as an organic EL display panel, a plurality of pixels arranged in a matrix constitute a display area. Each of the pixels is composed of subpixels corresponding to three colors red, green, and blue. The subpixels each include a light emitting layer of the corresponding color. The light emitting layers in the subpixels are separated from each other by a partition wall called "bank". The light emitting layers are each formed in a different one of openings of the partition wall, according to color. Examples of the partition wall include: a line bank for separating the plurality of subpixels on a column basis; and a pixel bank for separating the plurality of subpixels on a subpixel basis.
The partition wall is typically formed using a photosensitive resin. For example, a positive photosensitive resin or a negative photosensitive resin is applied onto a substrate, and exposed and developed using a photomask (reticle) having a predetermined mask pattern, thus forming the openings. The partition wall of the predetermined shape can be formed in this way.
Larger substrates are used in larger screens of display panels in recent years. This makes it difficult to form the partition wall of the predetermined shape in one operation using one photomask. In view of this, a method (division exposure) of dividing the area for forming the partition wall into a plurality of areas and exposing the plurality of areas using a plurality of photomasks corresponding to the plurality of areas has been proposed. Even in the case where the substrate is not large, division exposure may be needed depending on the type of exposure device.
A partition wall formation method by division exposure is described below, with reference to FIG. 16. FIG. 16 is a diagram for describing a conventional partition wall formation method by division exposure. (a) in FIG. 16 is a plan view of a typical display panel, and (b) in FIG. 16 is a partially enlarged view of a display area in the display panel.
As shown in (a) in FIG. 16, a plurality of pixels 1300 arranged in a matrix constitute a display area 1200 of a display panel 1100. When forming the partition wall in the display area 1200 of the display panel 1100, for example, the display area 1200 is evenly divided into nine areas (blocks) as shown in (a) in FIG. 16. In detail, one photomask corresponding to each of nine division areas 1200A to 1200I is prepared, and exposure is performed nine times for the nine division areas 1200A to 1200I in sequence using the photomask, to expose the whole display area 1200. After the whole display area 1200 is exposed, development and the like are performed to form the openings. The partition wall of the predetermined shape can be obtained as a result.
However, simply dividing the display area in the above-mentioned manner causes the following problem. The photomask is positionally deviated for each division area due to an exposure accuracy problem, which makes the photomask joint (division line) in the partition wall noticeable. In detail, in the case where the photomask is not accurately aligned for each of the nine division areas 1200A to 1200I in (a) in FIG. 16, the pattern of the partition wall is misaligned between adjacent pixels at the photomask joint. As an example, the pattern of the partition wall in a pixel 1300D corresponding to the division area 1200D and the pattern of the partition wall in a pixel 1300E corresponding to the division area 1200E which is right-adjacent to the division area 1200D are misaligned in the pixel column direction as shown in (b) in FIG. 16.
In view of this, the following patterning method has been proposed (see Patent Literature (PTL) 1). In the case of performing division exposure, one photomask overlaps another photomask at the photomask joint. The mask pattern in the photomask overlapping part is, for example, a pixelwise zigzag pattern so that the division line is not linear.
The patterning method disclosed in PTL 1 relates to patterning of pixel electrodes and the like. As shown in FIG. 17, a first photomask 2100 and a second photomask 2200 each have an overlapping part corresponding to pixel patterns of three pixels. Patterning areas 2101 and 2201 of the respective first photomask 2100 and second photomask 2200 and light shielding areas 2102 and 2202 of the respective first photomask 2100 and second photomask 2200 are alternately arranged in a zigzag in the vertical and horizontal directions. Hence, even when misalignment occurs at the photomask joint, such misalignment can be made less noticeable.


A processing system is operable for issuance and processing of cards with fee options applicable to a group of fee types. In one embodiment, the processing system includes a processing module, a secure card network, an issuer fee database and card account database. The card issuance database is operable to store a fee record associated with a card, wherein the fee record includes the fee options configured to apply to the group of fee types. The card account database is operable to store a card account record for the card, wherein the card account record includes a universal fee access counter for tracking parameters associated with the fee options configured to apply to the group of fee types.

1. Technical Field of the Invention
This invention relates generally to processing systems for issuance of cards and processing of card transactions and more particularly to transaction fees in such processing systems.
2. Description of Related Art
A processing system typically includes processing modules and secure communications networks for card processing, such as issuance and activation of cards, authorization and processing of card transactions and clearance and settlement of card transactions. The processing system communicates with issuers, such as bank or other entities, to issue cards to cardholders. The processing system then coordinates activation of cards and creation of card accounts for cardholders in its databases. The processing system also processes electronic transactions for the card accounts and determines transaction fees depending on the type of transaction. For example, various transaction fees may be charged to the card accounts depending on the type of transaction, such as withdrawing money from an ATM, Point of Sale (POS) purchases, ATM balance inquiries, etc. During clearance and settlement of electronic transactions, the processing system transmits the transaction amounts and transaction fees to the associated issuers for card accounts and remits payments of transaction amounts received from the issuers to acquirer banks for the merchants.
During the issuance process, an issuer first selects a type of card, such as credit, debit and prepaid cards, for issuance. The processing system communicates certain card features and services that the issuer may configure for the type of card selected by the issuer. One of the current features offered by processing systems during card issuance is an option for the issuer to select fee options for a unique fee type, wherein fee type may include fees associated with a transaction or fees associated with maintenance or service of a card. The processing system also provides an option for an issuer to select a unique fee type and waive any fees for a selected number of that unique fee type for the issued card. The option may provide for the waiver of fees to be reset periodically. For example, the selected fee options may provide for waiver of a number of fee types that resets each month providing for a number of free transactions each month for that unique fee type.
During processing of card transactions, the processing system tracks the number of that unique fee type processed for the card account associated with the issued card. If the number of that unique fee type is below the number selected by the issuer for the selected period, then the fee for that unique fee type is not charged to the card account by the processing system. However, once the selected number of that unique fee type has been exceeded for a selected period, the processing system then charges the associated fee for that fee type to the card account.
The current processing systems lack flexibility in the fee options provided to an issuer during issuance of a card, especially with respect to fee options that may be applicable to more than one fee type. Therefore, a need exists for a more flexible processing system that is operable to provide different options for waiver and/or selection of fees for groups of fee types

System and method for processing fees for a card


A method and apparatus for calibration of errors in the analog reference voltage input of an analog-to-digital converter. A monolithic reference voltage generator is provided to generate the analog reference which includes a bandgap voltage reference (50) that outputs an untrimmed voltage and a temperature voltage. The untrimmed voltage and temperature voltage are input to a delta-sigma A/D converter (52) which has the output thereof processed through a digital filter (54) to output data on a data bus (58) for storage in an EEPROM (60). The EEPROM (60) is operable in one mode to store temperature history data and, in another mode, to store temperature compensation data. In one mode, temperature compensation parameters are retrieved from the EEPROM (60) and utilized by a multiplier/accumulator circuit (74) to generate compensation factors which are output as a digital word to a DAC (76) for controlling a trim circuit (14). The trim circuit (14) provides a temperature compensation for the output of the bandgap voltage reference (50). The system is operable in a calibration mode to measure temperatures during a burn-in procedure and calculate necessary information to determine compensation factors and store these in the EEPROM (60). This temperature data is extracted from the EEPROM (60) and output to a serial I/O port (64), compensation factors determined and then stored back in the EEPROM (60). The delta-sigma A/D converter (52) in the run mode then makes temperature measurements for use by the multiplier/accumulator circuit (74) in determining the appropriate compensation data to extract from the EEPROM (60) to trim the output of the bandgap voltage reference circuit (50).

Historically, analog-to-digital converters have been implemented both with and without voltage or current references. G. McGlinchy, A Monolithic 12b 3uS ADC, ISSCC Digest, February 1982, pp. 80-81 and H. Lee, D. A. Hodges and P. R. Gray, A Self-Calibrating 12b 12uS CMOS, ISSCC Digest, February 1984, pp. 64-65. Digital-to-analog converters, on the other hand, are mostly implemented with on-chip references. B. Harvey, A Monolithic 12b System DAC, ISSCC Digest, February 1983, pp. 182-183, 306 and B. M. J. Kup, E. C. Dijkmans, H. Naus and J. Sneep, A Bit Stream Digital-to-Analog Converter with 18b Resolution, ISSCC Digest, February 1991, pp. 70-71, 293. In general, all existing converters contain an untrimmed or a "one-time" trimmed reference. After a final trim has been performed, any drift of the reference relative to time or temperature will result in reduced performance of the specifications of the converter.
Traditional voltage references have utilized analog techniques to trim the output voltage of the reference to eliminate drift with temperature. This technique is referred to as "curvature compensation" and it appears widely in published literature. For example, such techniques are disclosed in Bang-Sup Song and Paul R. Gray, A Precision Curvature-Compensated CMOS Bandgap Reference, IEEE J. Solid State Circuits, Vol. SC-18, No. 6, December 1983 and C. R. Palmer and R. C. Dobkin, A Curvature-Corrected Micropower Voltage Reference, ISSCC Digest, February 1981. Both of these articles are incorporated herein by reference. In general, a bandgap reference is the conventional analog voltage reference that is utilized. This type of analog reference is made up of the sum of a bipolar device's base-emitter voltage, V.sub.be, which has a negative temperature co-efficient and a thermal voltage, V.sub.th, which thermal voltage has a positive temperature co-efficient. The subtraction of the base-emitter voltages of two bipolar devices operating at different current densities will provide this thermal voltage. The values of V.sub.b and V.sub.th must be scaled appropriately to cancel out to first-order accuracy the temperature co-efficient of the entire circuit. To reduce temperature drift to even lower levels requires a second or third order compensation.
The primary disadvantage with respect to conventional temperature compensation techniques is that these operations are performed in the analog domain utilizing analog temperature curvature compensation techniques. The voltage V.sub.th is a linear voltage that is Proportional to Absolute Temperature (PTAT) wherein the base-emitter voltage is a polynomial which has some second and/or third order terms and therefore varies with temperature. When the voltage V.sub.be is linearized with respect to temperature, the following equation results: EQU V.sub.OUT =V.sub.be +KV.sub.T +FV.sub.T.sup.2 +GV.sub.T.sup.3 + . . . (1)
It can be seen that the constants K, F and G in Equation 1 are analog "real" number "quantities" as opposed to digital "integer" values. These quantities must be scaled and summed together such that the resultant voltage is insensitive to temperature changes. Since all scaling and summation is done in the analog domain, the circuits are highly sensitive to processing uncertainties and time drifts. Predominantly, laser trimmed resistors are utilized to adjust the temperature performance of the reference. Since the reference is packaged after the trimming is complete, post-calibration shifts are common due to piezo-electric effects caused by post-package stress.

Analog-to-digital converter with a continuously calibrated voltage reference


The invention relates to a rubber composition which contains a tris (maleamic acid derivative)amine as an anti-reversion additive. The invention also relates to a tire having a component of such rubber composition.

Rubber compositions are typically used for tire treads which may be optimized for various rubber composition properties to promote three tire properties; namely, traction, rolling resistance and treadwear.
In this regard, typically desirable physical properties for tire tread rubber compositions may include, for example, hardness, modulus, hysteresis as indicated by rebound properties, tangent delta (Tan. delta) at 0.degree. C., and abrasion resistance as indicated by DIN abrasion values. Such physical properties are well known to those having skill in the rubber compounding art and, in general, are considered to be predictive of tire tread performance.
The phenomenon of reversion in the accelerated sulfur vulcanization of cis 1,4-polyisoprene (natural or synthetic) or other diene-based elastomers is undesirable. Reversion occurs when polysulfidic crosslinks deteriorate with time and temperature. Subsequently, this leads to a reduction in crosslink density and a deterioration of physical properties (lower modulus and higher hysteresis).
Accordingly, it remains desirable to utilize a reversion resistant additive in various rubber compositions.
In the description of this invention, the term "phr," where used herein, and according to conventional practice, refers to "parts of a respective material per 100 parts by weight of rubber or elastomer".
In the description of this invention, the terms "rubber" and "elastomer," if used herein, may be used interchangeably, unless otherwise prescribed. The terms "rubber composition," "compounded rubber" and "rubber compound," if used herein, are used interchangeably to refer to "rubber which has been blended or mixed with various ingredients and materials" and such terms are well known to those having skill in the rubber mixing or rubber compounding art.

Rubber composition which contains anti-reversion material and tire with component thereof


A rectangular parallelepiped carrying case is fabricated from a fabric or other flexible material and includes at least three wire rod reinforcement members extending between lateral sides of the carrying case generally adjacent at least two of the top peripheral edges forming the carrying case. The wire rods are retained by an extra layer of fabric which effectively encapsulates the wire rods or rigid members that extend between opposite lateral sides of the carrying case.

In a principal aspect the present invention relates to a carrying case which is made from a flexible fabric material and which includes discrete and separate reinforcing wire frame or rod elements integrated into the carrying case to facilitate maintenance of the shape and form of the case.
Often, a generally rectangular parallelepiped carrying case is fabricated from rigid or boardlike panels that are fastened together in some manner so as to insure the structural integrity and the shape and form of the carrying case. Such carrying cases have multiple uses. For example, they may serve as a carrying case for tools, for documents, or for product samples. Generally, such carrying cases are somewhat expensive because of the necessity for utilizing various complex means and mechanisms to fasten the side members of the case together to form the generally parallelepiped shape of the case. Additionally, such cases typically have little flexibility, thus precluding placement of certain items therein.
Thus, there has developed the need for a carrying case which will maintain its form and shape yet which will achieve a certain degree of flexibility for the purpose of receiving items of unique shape and further for the purpose of being compactable to some extent for storage and/or shipment when empty.


A synchronous rectifier, a method of operating the same and a power converter incorporating the synchronous rectifier or the method. In one embodiment, the synchronous rectifier includes: (1) a plurality of parallel-coupled active rectifier circuits, each of the plurality of active rectifier circuits having first and second rectifier switches coupled to corresponding first and second voltage limiting switches and (2) a controller, coupled to the plurality of active rectifier circuits, that senses a through-current of the rectifier and employs the voltage limiting switches to disable corresponding ones of the plurality of active rectifier circuits as the through-current decreases to enhance an operating efficiency of the synchronous rectifier.

A power converter is a power processing circuit that converts an input voltage waveform into a specified output voltage waveform. In many applications requiring a DC output, switched-mode DC-DC converters are frequently employed to advantage. DC-DC converters generally include an inverter, a transformer having a primary winding coupled to the inverter and a rectifier coupled to a secondary winding of the transformer. The inverter generally includes a switching device, such as a field-effect transistor (FET), that converts the DC input voltage to an AC voltage. The transformer then transforms the AC voltage to another value and the rectifier generates the desired DC voltage at the output of the DC-DC converter.
Conventionally, the rectifier includes passive rectifying devices, such as Schottky diodes, that conduct the load current only when forward-biased in response to the input waveform to the rectifier. Passive rectifying devices, however, cannot achieve forward voltage drops of less than about 0.35 volts, thereby substantially limiting a conversion efficiency of the DC-DC converter. To achieve an acceptable level of efficiency, DC-DC converters that provide low output voltages (e.g., 1 volt) often require rectifying devices that have forward voltage drops of less than about 0.1 volts. The DC-DC converters, therefore, generally use synchronous rectifiers. A synchronous rectifier replaces the passive rectifying devices of the conventional rectifier with an active rectifier circuit having first and second rectifier switches, such as FETs or other controllable switches, that are periodically driven into conduction and non-conduction modes in synchronism with the periodic waveform of the AC voltage. The rectifier switches of the active rectifier circuit exhibit resistive-conductive properties and may thereby avoid the higher forward voltage drops inherent in the passive rectifyig devices.
One difficulty with using a rectifier switch (e.g., an n-channel silicon FET) is the need to provide a drive signal that alternates between a positive voltage to drive the rectifier switch into a conduction mode and a zero or negative voltage to drive the rectifier switch into a non-conduction mode. Although a capacitive charge within the rectifier switch may only be 30 to 50 nanocoulombs, the rectifier switch requires a high drive current for a brief period of time to change conduction modes. Typical drive currents may be 10 amperes or greater, lasting for tens of nanoseconds. The need to provide substantial power to the rectifier switch to change conduction modes thus reduces some of the advantages of the synchronous rectifier.
The '138 patent, the '482 patent and the '541 patent all describe the use of the secondary winding of the transformer to directly drive the synchronous rectifier. The recognition of the availability of suitable drive voltages from the secondary winding over the entire switching cycle of the inverter led to the development of self-synchronized synchronous rectifiers as disclosed in the aforementioned patents.
The '032 patent describes the use of extra windings in the transformer and voltage-limiting switches to improve the control of the drive signals. The extra windings are particularly useful when the output voltage is so low that the secondary winding does not develop sufficient voltage to ensure that the rectifier switches are fully driven into the conduction mode. The voltage-limiting switches are useful when the input or output voltages are variable, resulting in wide voltage variations in the drive signals. The extra windings and voltage-limiting switches thus allow the transformer to provide drive signals of sufficient voltage to more efficiently operate the synchronous rectifier.
While the rectifier switch avoids the higher forward voltage drops inherent in passive rectifying devices, the rectifier switch possesses a number of power loss mechanisms. During switching transitions, the body diode of the rectifier switch exhibits conduction losses. Switching losses are also associated with charging and discharging of the parasitic capacitances of the rectifier switch and with reverse recovery of the body diode. Because the input capacitance of a rectifier switch may be its largest parasitic capacitance, the loss associated with charging the input capacitance may be greater than other switching losses.
When the switching frequency of a DC-DC converter is increased to achieve a more compact design, the energy required to charge and discharge the input capacitance of the rectifier switch can result in substantial losses, detracting from, and ultimately limiting, the benefits of the low conduction mode resistance of the rectifier switch. In contrast to the conduction loss, which varies with the square of the load level, the switching loss is typically independent of the output load. Therefore, the switching loss, particularly the switching loss associated with the input capacitance of the switch, has a significant impact on the light load efficiency of the converter.
In many applications wherein the synchronous rectifier is required to drive heavy loads, the active rectifier circuit may not be adequate to efficiently convey the required current. Conventionally, circuit designers have advantageously parallel-coupled a number of active rectifier circuits to increase the current capacity of the synchronous rectifier. At light loads, however, the switching losses attributable to the additional rectifier switches further reduce the efficiency of the power converter.
Accordingly, what is needed in the art is a synchronous rectifier topology capable of reducing the switching loss associated with the input capacitance of the rectifier switches, particularly as the output load is reduced, thereby increasing the efficiency of the converter.

Synchronous rectifier having dynamically adjustable current rating and method of operation thereof


A ribbon filament (86) is provided for a thermionic emission device. The filament comprises an elongated body having a configuration defined by a length, a width, and a thickness. The length comprises a central portion (96) and first and second end portions (98) on either side of the central portion. The width of the central portion is greater than that of the first and second end portions. In addition, the thickness of the filament is substantially less than the width along its entire length. The ribbon filament (86) may be configured as a single helical coil having its first and second end portions (98) mounted to first and second legs (85), respectively, at locations of slots therein. Preferably, the filament (86) is comprised of tungsten and the first and second legs (85) are also comprised of tungsten.

Ion implantation has become the technology preferred by industry to dope semiconductors with impurities in the large scale manufacture of integrated circuits. A typical ion implanter comprises three sections or subsystems: (i) a terminal for outputting an ion beam, (ii) a beamline for directing and conditioning the beam output by the terminal, and (iii) a target chamber which contains a semiconductor wafer to be implanted by the conditioned ion beam. The terminal includes a source from which a beam of positively charged ions is extracted. The beamline components adjust the energy level and focus of the extracted positively charged ion beam on its way toward the target wafer.
A problem encountered in the use of such an ion implanter is that of wafer charging. As the positively charged ion beam continues to impact the target wafer, the surface of the wafer may accumulate an undesirable excessive positive charge. This accumulated positive charge is often non-uniform in its distribution across the surface of the wafer. Resulting electric fields at the wafer surface can damage microcircuitry on the wafer. The problem of accumulated surface charge becomes more pronounced as implanted circuit elements become smaller, because smaller circuit elements are more susceptible to damage caused by the resultant electric fields.
A known solution to the wafer charging phenomenon is the use of a plasma shower. A typical plasma shower includes an arc chamber in which an inert gas is ionized to produce a plasma comprised at least partially of low energy electrons, and a plasma chamber into which the plasma is extracted from the arc chamber and through which the ion beam passes. The plasma chamber contains a filament which is electrically heated so that it thermionically emits high energy electrons into the plasma chamber. The high energy electrons collide with inert gas molecules to create the plasma which includes low energy electrons capable of being trapped within the ion beam. The trapped low energy electrons thereby neutralize the net charge of the beam which in turn reduces the positive charge accumulation on wafer as the ion beam strikes the wafer surface. Such a system is shown in U.S. Pat. No. 4,804,837 to Farley, assigned to the assignee of the present invention and incorporated by reference as if fully set forth herein.
Plasma showers for neutralizing positively charge ion beams typically utilize helical coil or "pigtail" type filaments, having a uniform cross section along the entire length thereof, to produce thermionic emission of electrons (see, e.g., U.S. Pat. No. 4,463,255 to Robertson et al. and U.S. Pat. No. 5,399,871 to Ito et al.). Such helical filaments, however, present several operational impediments. For example, the uniform cross section of the coil filament provides for a uniform resistivity along the length thereof, which provides a corresponding uniform heat generation along the length thereof (i.e., as much heat is conducted by the legs or ends of the filament as is conducted by the center of the filament). As such, the ends (legs) of the filament provide a significant portion of the total heat conductivity/dissipation of the filament. In addition, the uniform cross section of the pigtail filament results in the establishment of a temperature gradient along the length of the filament, from the midpoint of the coil (hottest) to either leg of the coil (coolest).
Because electron emission is space charge limited, a large emission area of the filament is required to produce suitable electron emission. In order to raise a sufficient area of the filament to the temperature required to achieve thermionic electron emission, a "hot spot" is necessarily created within the temperature gradient of the filament, typically near the midpoint of the length of the coil. The electron emission rate near this midpoint is greater than at regions of lower temperature along the length of the coil. Because evaporation of filament material such as tungsten (W) depends exponentially on the electron emission rate, the hot spot produces much tungsten evaporation, which may eventually find its way to the surface of the wafer, thereby contaminating it. In addition, the high rate of evaporation of tungsten near the hot spot reduces the operational lifetime of the coil filament.
In addition to the non-uniform evaporation of tungsten along the length of a standard pigtail filament, which can cause wafer contamination, chemical contamination of the filament itself may occur. For example, the hot tungsten filament can chemically combine with nitrogen (N), which is outgassed from a photoresist-coated wafer during implantation, to form tungsten dinitride (WN.sub.2) on its surface. Tungsten dinitride formation on the filament reduces its thermionic emissivity. To regain the desired level of emissivity, more electrical current needs to be provided to the filament, which further reduces its efficiency and lifetime.
The generally cylindrical shape of the body of a standard coil filament (i.e., circular cross section throughout the length thereof), also results in a filament which is characterized by a high thermal conductivity and heat capacity. Such a filament does not exhibit rapid thermionic emissivity changes in response to corresponding electrical current changes. Fast response time of a filament is important to be able to control the filament current during periods of outgassing.
Accordingly, it is an object of the present invention to provide a filament for a plasma shower in an ion implantation system which provides for a uniform temperature along the length thereof so as to provide a corresponding uniform thermionic electron emission characteristic, and which minimizes contamination of the filament and of the wafers being implanted by the system.
It is a further object of the present invention to provide a plasma shower filament having a low heat capacity and thermal conductivity such that its thermal emissivity is made rapidly responsive to changes in input electrical current.
It is still a further object of the present invention to provide a plasma shower filament which reduces heat conductivity from an active central portion thereof out to the filament legs, while maintaining sufficient emissive surface area of the central portion, and wherein heat generation is focused in the central portion and not conducted out through the legs.
It is still a further object of the invention to provide a filament for a plasma shower which uses less electrical power than known filaments.
It is yet a further object of the present invention to provide a filament for a plasma shower which reduces the potential for gas leaks about the interface of the filament and a plasma gas chamber in which it is mounted.

Filament for ion implanter plasma shower


An elastomeric compression spring for isolating vibrations between a first part and a second part. The first part is movable in a direction relative to the second part. The elastomeric compression spring comprises a tube elongated along a central axis of the tube. The central axis of the tube is perpendicular to the direction. The tube is configured to compress in the direction. The tube comprises an outer surface comprising an initial contact line configured to initially receive contact from the first part. The tube further comprises at least one load tuning feature in the outer surface, parallel to the central axis, and circumferentially spaced apart from the initial contact line. The at least one load tuning feature creates a localized change in a thickness of the tube and a stiffness of the elastomeric compression spring at the at least one load tuning feature.

Elastomeric compression springs are used to isolate vibrations in some applications. Such elastomeric compression springs are configured to isolate vibrations according to the load-displacement performance and frequency response of the elastomeric compression springs. Manufacturing an elastomeric compression spring to achieve a particular load-displacement performance, without excessive trial-and-error iterations, can be difficult.

Elastomeric compression spring with load tuning feature and associated method of tuning


An LED ultraviolet photocatalytic oxidation device is provided in a fluid handling system, such as an air handling system. In one embodiment, the photocatalyst is disposed on a protective layer (e.g. glass, plastic or quartz) on the semiconductor of the LED. In another embodiment, the photocatalyst is disposed on the protective layer, which is separated from the semiconductor by a fluid that filters or changes the wavelengths emitted by the LED. In a third embodiment, the photocatalyst is disposed directly on the semiconductor of the LED.

The present invention relates generally to fluid purification systems and more particularly to ultraviolet photocatalytic oxidation systems.
Some air-handling systems include ultraviolet photocatalytic oxidation systems. A substrate coated with a photocatalyst, such as TiO2, is positioned in the fluid stream. Ultraviolet light is directed onto the photocatalyst to produce an oxidation process that removes many gases and chemicals, such as volatile organic compounds, from the air. However, ultraviolet lights are expensive and must be replaced periodically. There is also a pressure drop across the substrate, which is positioned in the fluid stream.
It has been proposed to use light-emitting diodes to generate ultraviolet light which is then directed onto a photocatalyst to maintain a photocatalytic oxidation process. In one proposed design for a muddler, a commercially-available LED is spaced away from one axial end of an elongated glass rod. The outer surface of the glass rod (other than the one axial end) is coated with a photocatalyst.

Solid state ultraviolet photocatalytic oxidation system


Devices and methods for removing an obstruction from a blood vessel are described. The devices are deployed in a collapsed condition and are then expanded within the body. The devices are then manipulated to engage and remove the obstruction.

1. Field of the Invention
The present invention is directed to methods and devices for removing obstructions from blood vessels. The device may be used to retrieve and remove clots and other biological obstructions. The device may also be used to retrieve embolic coils and the like which have been misplaced or have migrated to an undesirable location.
One such obstruction removal device is disclosed in U.S. Pat. No. 5,895,398 which is hereby incorporated by reference. The device has an expandable engaging member which is introduced into the blood vessel to engage the obstruction for removal.
The present invention is also directed to devices, systems and methods which use an expandable capture element when removing obstructions from a blood vessel. One such system for removing obstructions in a blood vessel is described in U.S. Pat. No. 5,102,415 to Guenther et al. The system described in U.S. Pat. No. 5,102,415 has a balloon catheter and a catheter having an expandable tip which receives the obstruction. The balloon catheter is passed through the obstruction while the balloon is deflated. The balloon is then inflated and the tip of the catheter is expanded. The balloon is then moved proximally so that the obstruction is pulled into the expanded tip of the catheter. A problem with the system of U.S. Pat. No. 5,102,415 is that the interaction between the balloon catheter and the leading edge of the catheter may tend to shear off portions of the obstruction. This can cause obvious problems when working in sensitive vascular areas.
The present invention is directed to additional devices and methods for removing obstructions in a blood vessel.

Systems, methods and devices for removing obstructions from a blood vessel


Image data on which image processing has already been performed is obtained with a digital camera. Image processing information includes information indicating a photography mode set at the digital camera. Tag information including the image processing information is attached to the image data. If the image processing information includes information indicating a night view mode, an image output device judges whether the night view mode was intentionally set by a user by judging whether photography date/time information included in the tag information represents night. If the judgment is YES, the image output device sets an output image processing means not to perform exposure correction processing. If the judgment is NO, the image output device sets the output image processing means to perform regular processing including the exposure correction processing.

1. Field of the Invention
The present invention relates to an image processing apparatus and an image processing method for performing further image processing on image data which was obtained with a photography device such as a digital camera, which has a function of performing image processing on image data. The further image processing is performed on the image data on which image processing has already been performed, and to which image processing information regarding the performed image processing has been attached. The present invention also relates to a program for causing a computer to execute the image processing method.
2. Description of the Related Art
In digital cameras, images obtained by photography may be recorded as digital image data in recording media such as internal memories of the digital cameras, and IC cards. The images obtained by photography may be reproduced on printers or monitors based on the recorded digital image data. When the images obtained with the digital cameras are reproduced, there are expectations that the images have high quality similar to that of prints reproduced from negative films.
When prints are obtained from the digital image data as described above, image quality of the prints may be improved by performing various kinds of image processing on the image data as required, such as exposure correction processing, white balance adjustment processing, gradation correction processing, color correction processing, and sharpness processing. A method for obtaining prints of higher image quality has been proposed, wherein image data which was obtained with digital cameras and to which photography information such as with/without flash and a type of lighting has been attached is output, and wherein when image processing is performed, the image processing is performed on the image data in a more appropriate manner with reference to the photography information attached to the image data (U.S. Pat. No. 6,011,547).
Meanwhile, digital cameras have also been proposed, which can output processed image data by automatically or manually performing image processing on image data obtained by photography. In such digital cameras having an image processing function, image processing is performed on the image data so that optimum image quality is attained according to photographed scenes and photography conditions. Further, photographers may intentionally select kinds of image processing which will be performed on the image data and various functions related to image processing. The kind of image processing may be selected from automatic white balance adjustment processing, white balance adjustment processing in a fixed light source type mode, image quality modification processing (gradation, sharpness and saturation), taste in reproduction images (monochrome, sepia, beautiful skin or the like) and the like. Further, the various functions related to image processing, such as a photography mode (a portrait mode, a scenery/distant view mode, a macro/close-up mode, a night view/fireworks mode, an underwater photography mode, a user exposure correction mode or the like), an automatic bracket function, photography using an optical filter, soft-focus photography, interval photography, continuous shooting, multiple exposure, synthesis with a template and synthesis with a frame may be selected. Accordingly, optimum image processing may be performed according to the kinds of image processing and functions selected by the photographers to reflect photographers' intentions.
When image data obtained with digital cameras having the image processing functions as described above is reproduced on printers or monitors, further image processing is performed on the image data. However, if the further image processing is performed on the image data on which image processing has already been performed, reproduced images might not have the image quality intended at the digital cameras or reproduction devices. Therefore, a method has been proposed, wherein image processing related to image processing information, which has already been performed on the image data is cancelled or a processing amount of the image processing is reduced based on the image processing information such as a photography mode, attached to the image data (U.S. patent Laid-Open No. 20030197879). In this method, image processing which has already been performed on the image data is not performed or a processing amount of the image processing is reduced. Therefore, processed image data on which image processing has been performed in an appropriate manner may be obtained.
However, if a user of a digital camera erroneously set a photography mode, although image processing which was not intended by the user has been performed on the image data, the image processing which was not intended by the user is cancelled or the processing amount of the image processing is reduced. Therefore, processed image data on which image processing has been performed in an appropriate manner may not be obtained and an image having the image quality intended by the user may not be reproduced.

Image processing apparatus, method, and program for performing regular image processing and/or correction processing based on a set photography mode and actual photography information


In a solid-state image sensor according to this invention, an image signal temperature variation suppressing unit changes a voltage value of a driver voltage applied to multiplying registers in response to variations in sensor temperature of a CCD image sensor. Thus, a charge multiplication gain of a charge multiplying unit is electrically controlled to suppress variations in signal strength of image signals due to the variations in the sensor temperature of the CCD image sensor. As a result, without relying on thermal control with which it is very difficult to realize high precision control, variations in the signal strength of the image signals due to the variations in the sensor temperature of the CCD image sensor are suppressed easily by controlling the charge multiplication gain of the charge multiplying unit based on the electric control, with which it is very easy to realize high precision control, performed by the image signal temperature variation suppressing unit in response to the variations in the sensor temperature of the CCD image sensor.

CCD image sensors which are solid-state image sensors widely used in image pickup apparatus have been used in electronic cameras and the like in recent years. A conventional CCD image sensor, as shown in FIG. 14, for example, includes numerous photoelectric converters 191 arranged in a two-dimensional array on a plane of projection of an object image serving as an image area, CCD cells 192 and 193, output registers 194 and a charge-to-voltage converter 195. Signal charges for one frame detected through photoelectric conversion by the photoelectric converters 191 are all transferred by the CCD cells 192 to the CCD cells 193 in adjacent storage areas to be once stored therein. Then, the signal charges are transferred, in units of a predetermined number, by the CCD cells 193 to the output registers 194 arranged in a charge fetching area. Subsequently, the output registers 194 transfer the charges again, successively, to the charge-to-voltage converter 195 for conversion into voltage signals which are outputted as image signals (see Patent Document 1, for example).
(i) In recent years, two proposals have been made with regard to the CCD image sensor, to improve detection sensitivity, i.e. to realize increased sensitivity, by suppressing increase of noise and multiplying signal charges. These two proposals have a point in common in that detection sensitivity is improved by providing a charge multiplier (not shown) that multiplies signal charges by means of an impact ionization phenomenon caused by the signal charges passing through a high electric field region.
To describe the first proposal more particularly, part of the CCD cells 193 in the storage area are made to generate a high electric field region for charge multiplication. When transferring the signal charges, the charges are passed through the high electric field region for charge multiplication to multiply the signal charges, thereby to attain high sensitivity. That is, the first proposal increases sensitivity by incorporating the charge multiplier into the CCD cells 193 in the storage area (see Patent Document 2 and Non-patent Document 1, for example).
To describe the other proposal more particularly, a multiplying register is provided between the output registers 194 and charge-to-voltage converter 195 for generating a high electric field region for charge multiplication. When transferring signal charges, the charges are passed through the high electric field region for charge multiplication to multiply the signal charges, thereby to attain high sensitivity. That is, the latter proposal increases sensitivity by additionally providing a charge multiplier between the output registers 194 and charge-to-voltage converter 195 (see Patent Document 1 and Non-patent Document 2, for example).
(ii) In the case of the CCD image sensor in FIG. 14, as noted in (i), a charge multiplier (not shown) is additionally provided between the output registers 194 and charge-to-voltage converter 195. Since the signal charges outputted from the output registers 194 are converted into voltage signals after being multiplied by the charge multiplier, detection sensitivity is high for an optical image of an object. However, the speed of fetching the signal charges is not fast enough for high-speed photography exceeding 10,000 pictures per second (=10,000 frames per second).
On the other hand, high-speed image sensors capable of high-speed photography exceeding 10,000 pictures per second have already been developed. In conventional high-speed image sensors, as shown in FIGS. 15 (a) and 15 (b), each photoelectric converter 201 has a signal charge storage unit 202 for receiving, picture by picture, signal charges detected through photoelectric conversion by the photoelectric converter 201 and corresponding to a plurality of pictures, and storing the charges separately for the respective pictures. FIG. 15 (a) and FIG. 15 (b) show only part of photoelectric converters 201 arranged vertically. In reality, numerous photoelectric converters 201 are arranged both vertically and horizontally.
Each signal charge storage unit 202 includes a plurality of CCD cells 202A connected in series. As each frame is acquired during a photographic operation, a signal charge is fed from each photoelectric converter 201 to the first CCD cell 202A, and signal charges already stored at preceding acquisition steps are simultaneously passed forward by one CCD cell 202A. Thus, the CCD cells 202A of each signal charge storage unit 202 have signal charges for respective frames and corresponding in number to the CCD cells 202A, stored in the order of acquisition. The signal charges stored in the CCD cells 202A of each signal charge storage unit 202 are read after the photographic operation, converted into voltage signals, and then outputted as video signals (see Patent Document 3, for example).
Thus, in the case of the high-speed image sensors of FIG. 15 (a) and FIG. 15 (b), the photoelectric converter 201 has, attached thereto, the signal charge storage unit 202, in which the signal charges fed from the photoelectric converter 201 are transferred between the CCD cells 202A in an extremely short time, to be stored for the number of frames corresponding to the number of CCD cells 202A. Each signal charge storage unit 202 accumulates, as a lot, the signal charges for the same number of frames as the number of CCD cells 202A. It is therefore usable in high-speed photography exceeding 10,000 frames per second.
In the case of the high-speed image sensor of FIG. 15 (a), the two-dimensional array arrangement of photoelectric converters 201 does not become a square matrix. This is because, among the photoelectric converters 201 arranged vertically, lower photoelectric converters 201 are arranged obliquely leftward below upper photoelectric converters 201 so as not to overlap upper signal charge storage units 202. On the other hand, in the case of the high-speed image sensor of FIG. 15 (b), the CCD cells 202A of the signal charge storage units 202 are arranged obliquely, and lower photoelectric converters 201 are arranged directly under upper photoelectric converters 201. Consequently, the two-dimensional array arrangement of photoelectric converters 201 forms a square matrix.
[Patent Document 1]
Japanese Unexamined Patent Publication H10-304256
[Patent Document 2]
Japanese Unexamined Patent Publication H7-176721 (pages 3-7, FIGS. 1-11)
[Patent Document 3]
Japanese Unexamined Patent Publication No. 2001-345441 (page 2, FIGS. 11 and 12)
[Non-patent Document 1]
J. Hynecek, "Impactron-A New Solid State Image Intensifier, "IEEE Trans. on Elec. Dev., vol. 48, No. 10, 2001 (p. 2238-2241, FIG. 1)
[Non-patent Document 2]
M. S. Rpbbins, B. J. Hadwen, "The Noise Performance of Electron Multiplying Charge-Coupled Devices, "IEEE Trans. on Elec. Dev., vol. 50, No. 5, 2003 (p. 1227-1229, FIG. 2-3)

Solid-state image pickup apparatus, image pickup apparatus, and image sensor


The present invention realizes an ion exchange apparatus capable of enhancing the reliability of regeneration operation. Further, the present invention realizes an ion exchange apparatus capable of simplifying the construction of a salt water supply device. The ion exchange apparatus includes a resin bed housing part (2) in which an ion exchange resin bed (5) is housed; a flow passage control valve (3) for switching between a water service operation and a regeneration operation; and a salt water tank (40) for reserving salt water to be used in regeneration, the flow passage control valve (3) being connected to the salt water tank (40) through a salt water supply line (31), in which the salt water supply line (31) is provided with a flow detecting unit (48) for detecting a flow rate in a direction of supplying salt water and a flow rate in a direction of supplying refill water.

1. Field of the Invention
The present invention relates, to an ion exchange apparatus with an enhanced reliability of regeneration operation and a simplified construction of a salt water supply device.
2. Description of the Related Art
Ion exchange apparatuses for removing hardness components (e.g., calcium ion and magnesium ion), nitrate nitrogen (e.g., nitrate ion and nitrite ion), and so on in raw water such as tap water and underground water, by adsorbing them on an ion exchange resin bed have been known in the art. Among those ion exchange apparatuses, one that substitutes sodium ion or potassium ion for hardness components in water for by using a cation exchange resin is referred to as a water softener. In contrast, among those ion exchange apparatuses, one that substitutes chloride ion for nitrate nitrogen by using an anion exchange resin is referred to as a nitrate nitrogen remover.
When the total amounts of adsorbed specific ions (hardness components and nitrate nitrogen), which are to be removed, reach a predetermined limit of exchange capacity, the ion exchange resin bed begins to leak the specific ions into treated water. Therefore, before the total amounts of the adsorbed specific ions exceed the predetermined limit of exchange capacity, the ion exchange apparatus performs a regeneration operation of bringing the ion exchange resin bed into contact with salt water (specifically, an aqueous sodium chloride solution) to recover its exchange capacity.
The general construction of the ion exchange apparatus is disclosed in, for example, JP 04-108586 A. The ion exchange resin bed is housed in a bomb-shaped resin cylinder (resin tank) having an opened upper part. The top of the resin cylinder is provided with a flow passage control valve for switching between water service operation and regeneration operation. In addition, the ion exchange apparatus is provided with a salt water tank reserving salt water and a salt water valve arranged in the salt water tank, which serve as a salt water supply device for supplying salt water to the ion exchange resin. The salt water valve is connected to the flow passage control valve through the salt water supply line. The salt water tank is designed such that the user supplies regeneration salt regularly to thereinto to generate the salt water.
The regeneration operation generally includes a backwash process, a regeneration process, an extrusion process, a rinsing process, and a water-refill process, which are performed in the stated order. So, the salt water valve is configured to actuate in accordance with the respective processes. In the regeneration process, raw water is passed through an ejector installed in the flow passage control valve and salt water in the salt water tank is then supplied to the ion exchange resin bed using a negative pressure generated in the ejector. At this time, the salt water valve operates to open a passage from the inside of the salt water tank to the flow passage control valve and then operates to block air suction due to the action of a float ball when the salt water is consumed to a predetermined water level. Subsequently, the process switches to the extrusion process when the salt water valve is closed. In other words, in the ion exchange apparatus, the shift from the regeneration process to the extrusion process depends on the operation of the salt valve, and with regard to the processing times for the regeneration process and the extrusion process, only the total processing time is defined.
Further, in the water-refill process, refill water is supplied from the flow passage control valve to the salt water tank. At this time, the salt valve operates to open a passage from the flow passage control valve to an inside of the salt water tank, while it operates to block an injection of refill water by the action of a float valve when the supply of refill water reaches to a predetermined water level. The salt water valve can be produced in mass production from molded parts using a corrosion-resistant synthetic resin material, so it has been employed as a standard mechanism in the ion exchange apparatus.
By the way, in the ion exchange apparatus, the amount of refill water to be supplied is controlled by the operation of the salt water valve. Therefore, when the float valve is stuck by crystalline salt, refill water is not sufficiently supplied, and thus the desired amount of salt water cannot be produced. In addition, in the ion exchange apparatus, the amount of salt water to be supplied is controlled by the operation of the salt water valve. Thus, for example, when the user has forgotten to refill regeneration salt, the desired amount of salt water cannot be produced. Further, in the ion exchange apparatus, the shift from the regeneration process to the extrusion process depends on the operation of the salt water valve. Thus, for example, when the pressure of raw water against the ejector is lowered or when the line for supplying the salt water is clogged, the amount of salt water to be supplied and the amount thereof to be extruded become insufficient. Those deficiencies result in insufficient regeneration and extrusion of the ion exchange resin bed, so such deficiencies have often been constituted causes in deterioration of treated water to be supplied.
Further, the salt water valve has a large number of parts, so the salt water supply device has a complicated construction. Thus, the use of the salt water valve requires much time in assembling and maintenance, thereby causing an increase in costs for production and maintenance.

Ion exchange apparatus and method of controlling the same


PrBa.sub.2 Cu.sub.3 O.sub.Y exhibiting superconductivity is provided by a method including the steps of preparing a solvent consisting of a mixture of praseodymium oxide, at least one of barium oxide and barium carbonate, and copper oxide at a mixing ratio of between 1:3:5 and 1:8:20, disposing the solvent between a feed rod of PrBa.sub.2 Cu.sub.3 O.sub.7 formed to a high density and a seed crystal, heating the solvent to a temperature of 880.degree.-980.degree. C. in an atmosphere of an inert gas of at least one of argon and nitrogen mixed with 0.01-2% oxygen to form a floating solvent zone, moving the floating solvent zone toward the feed rod at 0.1-1.0 mm/hr under a temperature gradient at the solid-liquid interface of 25.degree.-35.degree. C./mm to precipitate single crystal on the seed crystal, and heat-treating the single crystal obtained in an atmosphere containing not less than 15% oxygen. Another aspect of the invention provides a superconducting device including the superconducting PrBa.sub.2 Cu.sub.3 O.sub.Y single crystal material in combination with at least one non-superconducting PrBa.sub.2 Cu.sub.3 O.sub.Y crystal material.

1. Field of the Invention
This invention relates to a method of producing structural formula PrBa.sub.2 Cu.sub.3 O.sub.Y single crystal exhibiting superconductivity and a superconducting device constituted solely of PrBa.sub.2 Cu.sub.3 O.sub.Y crystal materials at least one of which is PrBa.sub.2 Cu.sub.3 O.sub.Y crystal exhibiting superconductivity.
2. Description of the Prior Art
It is generally held that substances of the so-called 123 structure represented by the structural formula RBa.sub.2 Cu.sub.3 O.sub.Y (R=rare earth element, Y=7-y) exhibit superconductivity in the temperature range of 80-90 K, giving hope of their usability to configure superconducting devices that can operate even at the temperature of inexpensive liquid nitrogen. The conventional view has been, however, that when the rare earth element is Pr, i.e., in the case of PrBa.sub.2 Cu.sub.3 O.sub.Y, superconductivity is not exhibited despite the 123 structure. The PrBa.sub.2 Cu.sub.3 O.sub.Y single crystal produced by the floating zone method reported earlier by the inventors in Japanese Patent Application No. 6-531725 (Example 3), for example, did not exhibit superconductivity.
Up to now, therefore, proposed uses of PrBa.sub.2 Cu.sub.3 O.sub.Y have been limited to those that utilize its non-superconducting properties (insulating, semiconductor and normal conducting properties) in such applications as a tunnel junction barrier or interlayer isolation material in Josephson devices (superconducting devices using the Josephson effect) utilizing thin film of another type of 123 structure. It has been considered impossible to configure Josephson devices and the like from PrBa.sub.2 Cu.sub.3 O.sub.Y either in its pure form or as doped with a small amount of some other element. (No such device has yet been reported.) It is known, however, that when an oxide high-temperature superconducting Josephson device is fabricated as a laminated structure consisting of different types of thin film or using a combination of substrate materials and includes non-superconducting PrBa.sub.2 Cu.sub.3 O.sub.Y thin film as only a part thereof, difference in lattice constant and/or coefficient of thermal expansion produces distortion at the junction interface, a critical part of such a device, and leads to decreased performance owing to degradation of electrical resistance and superconducting properties.
Further, in a superconducting three-terminal device utilizing superconductor-insulator transition produced by controlling the carrier (electron and hole) density in the oxide high-temperature superconductor from the outside, the amount of change in superconductivity for a given change in carrier density is small, making it difficult to fabricate a useful device.
In order to overcome these difficulties, the inventors demonstrate that, contrary to common belief, PrBa.sub.2 Cu.sub.3 O.sub.Y exhibiting superconductivity exists, propose a superconducting device consisting solely of PrBa.sub.2 Cu.sub.3 O.sub.Y, namely of non-superconducting PrBa.sub.2 Cu.sub.3 O.sub.Y and superconducting PrBa.sub.2 Cu.sub.3 O.sub.Y in combination, and further propose a specific method of producing superconducting PrBa.sub.2 Cu.sub.3 O.sub.Y.
Through extensive research, the inventors discovered that conventionally produced PrBa.sub.2 Cu.sub.3 O.sub.Y single crystal does not exhibit superconductivity because the crystal production method based on conventional technology deprive it of this property.
Specifically, since production of superconducting PrBa.sub.2 Cu.sub.3 O.sub.Y single crystal requires further improvement of single crystal quality, it is highly important to eliminate causes obstructing manifestation of superconductivity from PrBa.sub.2 Cu.sub.3 O.sub.Y single crystal produced by the prior-art floating zone method to the utmost possible. For this, it is necessary to ascertain crystal production conditions for PrBa.sub.2 Cu.sub.3 O.sub.Y that enable crystal growth to progress stably. Important factors include the atmosphere conditions and the crystal growth rate. PrBa.sub.2 Cu.sub.3 O.sub.Y crystal production conditions for the purpose of obtaining a superconductor have not been reported to date.
In light of the foregoing circumstances, the inventors conducted repeated single crystal production experiments with regard to PrBa.sub.2 Cu.sub.3 O.sub.Y. As a result, they discovered crystal production conditions for obtaining PrBa.sub.2 Cu.sub.3 O.sub.Y capable of functioning as a superconductor. Based on the results of this research, this invention provides a floating zone method in accordance with conditions suitable for production of superconducting PrBa.sub.2 Cu.sub.3 O.sub.Y single crystal.

Method of producing superconducting PrBa.sub.2 Cu.sub.3 O.sub.y single crystal and PrBa.sub.2 Cu.sub.3 O.sub.y superconducting device

Agency of Industrial Science & Technology, Ministry of International Trade & Industry


An exemplary embodiment of the present invention provides a method for providing information about units installed in a computing device. The method includes identifying an installed unit prior to an initialization of an operating system and obtaining information about the installed unit, wherein the information comprises a regulatory identification number, a manufacturer's logo, or a combination thereof. The method also includes receiving a request to provide information about the installed unit and providing the information about the installed unit.

A computing device may generally have a number of labels or stickers attached to identify the specific units that are installed in the computing device. This includes both units installed by the manufacturer and units installed by a user, for example, a wireless card added as an upgrade. Some of these labels may be required by government regulations at the time of sale. For example, systems in use in the United States are required to have a Federal Communications Commission (FCC) ID label identifying any intentional radiators (radio transmitters) that are installed within the computing device. Similar requirements exist for other nationalities.
However, the labeling requirement may be burdensome in a production environment, as the FCC ID and other numbers may be received late in the production schedule. As the labels must be designed and in inventory prior to shipment of a computing device, this may delay production or shipping. Further, aftermarket units installed by a user are often accompanied by a label that may or may not be correctly applied to the computing device. If the label is not applied, then the computing device may not be in compliance with the regulations.

Method and system for displaying information on installed units

Hewlett-Packard Development Company, L.P.


A self-adjusting power supply circuit of silicon controlled dimming in LED lighting, having a first resistor, a second resistor, a third resistor, a first diode, a second diode, a third diode, a fourth diode, a comparator, a first invertor, a second invertor, a first field effect transistor, a second field effect transistor, a third field effect transistor, a fourth field effect transistor, a switch transistor, a fifth field effect transistor, and a parasitic capacitor; the first resistor and the first diode are connected in series; the fourth diode is connected in parallel with the first resistor and the first diode; the second resistor and the third resistor are connected in series; two pins of the first invertor are connected respectively with the comparator and the second invertor; the first field effect transistor is connected in series with the second field effect transistor and the second diode; the third field effect transistor is connected in series with the fourth field effect transistor; the third diode is connected in parallel with the fifth field effect transistor; the fifth field effect transistor is connected in parallel with the parasitic capacitor; the fifth field effect transistor is connected in series with the switch transistor.

The present invention relates to a power supply circuit, and more specifically relates to a self-adjusting power supply circuit of silicon controlled dimming in LED lighting.
Silicon controlled dimming is a lighting adjustment method commonly applied to incandescent lights and energy-saving lights. In recent years, due to the developments of LED lighting technology, silicon controlled dimming technology is also applied to LED lights, and now widely applied to technical fields such as household and commercial lightings. FIG. 2 schematically illustrates a circuit diagram of silicon controlled dimming in LED lighting. V0 represents AC mains voltage, which is generally 220 VAC or 120 VAC; reference number 310 represents a silicon controlled dimmer; reference 311 represents a rectifier bridge; reference number 312 represents buck switching power supply; and reference 313 represents a load which is an LED light. When the complete AC mains voltage is chopped by the silicon controlled dimmer, a broken AC waveform is formed; after rectification, the broken waveform supplies power to the buck switching power supply 312. The more broken the waveform is, the dimmer the LED light becomes.
FIGS. 3a to 3c disclose waveforms of the voltage at two ends of a capacitor CHV after rectification. An initial wave form 110 represents a complete AC mains voltage waveform, which is a waveform of a sinusoidal waveform after rectification, and this waveform corresponds to the situation where the dimmer is not connected. A third waveform 113 represents a chopped wave chopped by the silicon controlled dimmer 310 and an output waveform rectified by the rectifier bridge 311. An area enclosed by a first waveform 111, a second waveform 112 and the time axis represents the chopped parts chopped by the dimmer. The larger this area is (the more the second waveform 112 shifts to the right), the larger the parts having zero electrical level are, and correspondingly, the dimmer the LED light will become. A fourth waveform 114 represents a waveform with the largest parts being chopped off when the dimming effect of the dimmer is set at the greatest degree. According to the fourth waveform 114, most parts have zero electrical level, and only a very small portion of the waveform is left with non-zero electrical level. In such situation, power supply becomes a very difficult condition to maintain when electrical level is zero for most of the time. If power supply is insufficient, the drive chip will restart and the LED light will flash as a result. However, flashing of the LED light is not preferred.
As noted above, power supply is a very important technical issue in a silicon controlled dimming circuit. Some of the existing power supply technologies are described as follows. In a first existing power supply technology as shown in FIG. 4, Vi represents a voltage of a first end capacitor CHV1; Vi is connected with a VCC terminal via an eleventh resistor R11 to directly supply power to the drive circuit. The greatest disadvantage of this technology is that the eleventh resistor R11 has to allow current of small enough voltage to pass through so as to allow power supply even under the voltage represented by the fourth waveform 114 shown in FIG. 3c, but when the waveform is near to its full cycle, power consumption will be enormously high (wasted through direct grounding of a first clamp tube Z1), and there is a great loss of efficiency. This technology is therefore rarely used since people nowadays attach more and more importance to efficiency. This first existing power supply technology uses components such as a tenth resistor R10, the eleventh resistor R11, a twelfth resistor R12, the first clamp tube Z1, a fifth capacitor C5, a third diode D3 and a sixth capacitor C6.
FIG. 5 shows a second existing power supply technology according to which a junction gate field-effect transistor (JFET) J10 is integrated inside the drive chip to directly supply power to the VCC terminal. This technology effectively solves the dilemma between power supply and efficiency. However, its greatest disadvantage is that the drive chip has to be designed in accordance with high-voltage BCD. High-voltage BCD has a much higher cost and the space required by each component is larger. Another deadly disadvantage is that, under high-voltage BCD, ESD of the JFET is not good, and thus resulting in easy damage of chip pins and lowered overall product yield rate along with complaints from the customers. This second existing power supply technology uses components such as the JFET J10, a sixteenth resistor R16, a seventeenth resistor R17, an eighteenth resistor R18, an eighth capacitor C8, a ninth capacitor C9 and a fifth diode D5.
FIG. 6 shows a third existing power supply technology according to which the drive chip is designed in accordance with ordinary prior arts, and a power supply network comprising a tenth secondary winding L10, an eleventh secondary winding L11, a twelfth diode D12, a fourth capacitor C4 and a ninth resistor R9 is formed to supply power to the VCC terminal. This technology solves the problems of the first two technologies described above, and therefore being widely used nowadays. This technology also uses a second clamp diode Z2, a seventh resistor R7, a third capacitor C3, a sixth resistor R6 and a second capacitor C2.
FIG. 7 shows a fourth existing power supply technology to be used in a switching power supply having a floating ground structure (a variation of the third existing power supply technology), where one less winding is being used. In other words, a power supply network formed by a fourteenth diode D14, a seventh capacitor C7 and a fifteenth resistor R15 supplies power to the VCC terminal. This technology also uses a tenth resistor R10, an initial capacitor C0, a first capacitor C1, a thirteenth resistor R13, a twelfth diode D10 and a third clamp diode Z3.
The third and the fourth existing power supply technologies are widely used power supply technologies nowadays. The third one having a common ground structure (FIG. 6) has disadvantages of requiring additional windings and a network formed by high-voltage diode, high-voltage capacitors and resistors for power supply. The fourth one having a floating ground structure (FIG. 7) does not require any secondary windings, but it still requires components such as high-voltage diodes, high-voltage capacitors and resistors. The large quantity of components increases the cost and complicates the wire arrangement on a PCB. In actual use, it is discovered that in order to adapt to different dimmers, RC network has to be more complicated to solve the problem of power supply. Besides, as shown in FIGS. 6-7, the second clamp diode Z2 and the third clamp diode Z3 are used for consuming the extra power at the VCC terminal, thereby increasing power consumption and lowering efficiency.

Self-adjusting power supply circuit of silicon controlled dimming in LED lighting


A power source circuit includes a voltage converter circuit and a control circuit that includes a voltage divider circuit and a protective circuit. The protective circuit includes a first oxide semiconductor transistor in which an off-state current is increased as temperature is increased, a capacitor that accumulates the off-state current as electric charge, a second oxide semiconductor transistor, and an operational amplifier including a non-inverting input terminal to which a reference voltage is input. The first oxide semiconductor transistor is provided near the voltage converter circuit or an element that generates heat in the control circuit.

1. Field of the Invention
One embodiment of the disclosed invention relates to a semiconductor integrated circuit.
2. Description of the Related Art
In recent years, the number and the kinds of components used for electric devices, such as an IC, have been markedly increased because of a variety of usages or specifications of electric devices. In order to operate such components, a power source circuit that supplies voltage and current corresponding to each component is needed (see Patent Document 1.)

Semiconductor Energy Laboratory Co., Ltd.


A computer implemented method migrates test management data between a Lotus Notes® test management application and a tracking application. A user interface of the Lotus Notes® test management application receives a user action. The user action is an action to be taken on a document of the tracking application. The user action is a view of the document, a modification of the document, or a creation of the document. The document is a test document or a problem document. A bridge application is then triggered to communicate the user action from the Lotus Notes® test management application to the tracking application. The bridge application retrieves mapping information for the document. The bridge application then utilizes the mapping information to perform the user action on the document of the tracking application. The bridge agent then receives the document of the tracking application. The bridge agent maps the document of the tracking application to the user interface of the Lotus Notes® test management application using the mapping information. The user interface of the Lotus Notes® test management application then presents the document of the tracking application to the user.

1. Field of the Invention
The present invention relates generally to computer implemented methods. More specifically, the present invention relates to computer implemented methods for migrating test management data between a Lotus Notes® test management application and a tracking application.
2. Description of the Related Art
Today many test management tools exist which contain a repository for test cases and problems. These test management tools provide a tracking mechanism. A broad range of these tools is based on Lotus Notes® or Rational® test management tools.
Lotus Notes® test management tools provide strength and flexibility in the area of test case management. Additionally, Lotus Notes® test management tools provide rich text field support.
In the case of Rational ClearQuest® test management tools, solutions are provided that excel in problem management and life cycle management. However, Rational ClearQuest® test management tools are insufficient in the case of rich text field support. Rational ClearQuest® test management tools fail to provide rich text field support integrated for ClearQuest®.
Currently, there is no interoperability between both Lotus Notes® test management tools and Rational ClearQuest® test management tools for migration and collaboration. Thus, any migration from Lotus Notes® to Rational® test management tools currently requires a lot of manual effort from the operator.

International Business Machines Corporation


The present invention pertains to a combined machining equipment for steel tubes, and a machining method is of a small size, can easily be moved, and is capable of not only flaring a steel tube, but also grinding a flared surface, forming a groove, and peeling off a lining. A main shaft (121) is rotatably mounted on a slide frame (141) slidable with respect to a common mount (103), and a second machining head (124) is mounted on a flange on the distal end of the main shaft (121). An auxiliary shaft (131) is slidably disposed in the main shaft (121) for rotation therewith. A first machining head (134) is mounted on a mount base (132) on the distal end of the auxiliary shaft (131). When the main shaft (121) is rotated and moved back and forth and the auxiliary shaft (131) is moved back and forth with respect to the main shaft (121), the first machining head (134) spreads the tip end of a steel tube (110) held by a steel tube holding apparatus (102) to a first position, and the second machining head (124) spreads the tip end of the steel tube (110) to a predetermined flanged position, thus flaring the tip end of the steel tube (110).

Steel tubes are widely used as pipes for transporting fluid, and steel tubes that are cut to certain lengths are joined to make up a desired pipe system. According to one process of joining two steel tubes, groves are formed in ends of the steel tubes, the grooved ends are held end to end, and the outer circumferential surfaces of the joined ends are welded to each other. Alternatively, flanges or the like are welded to ends of steel tubes, providing flanged steel tubes, and the flanges are fixed to each other by bolts and nuts on site. According to still another joining process, the outer surfaces of ends of tubes are externally threaded, and are joined to each other by a sleeve coupling whose inner surface is internally threaded.
Pipings are often installed at high places. If steel tubes are welded on site, then the welding process is performed on scaffolds. Therefore, the worker needs to take improper postures to weld the entire circumferential surfaces of the tubes, tending to introduce welding irregularities and misalignments and also to cause a spark-induced risk to surroundings. For replacing pipes or changing pipe layouts, it is necessary to cut off the pipes and then weld the pipes again. Such a process is not easy to carry out.
Joining flanged steel tubes can be performed at high places relatively easily because they can be fastened together by bolts and nuts. However, because the flanges need to be welded to the steel tubes in advance, if the flanges are not welded with sufficient accuracy, then a liquid or gas leakage may occur in the piping, or the piping may not be laid in a desired layout.
According to a recent process, flanges are not directly welded to steel tubes, but loose flanges whose inner surfaces are slidable along the outer surfaces of the steel tubes are slid over the steel tubes. Thereafter, a flaring process is performed to bend ends of the steel tubes outwardly into flanges. On site, a gasket is placed between the flaring ends to be joined, and the loose flanges are fastened to each other by bolts and nuts with the flaring ends sandwiched between the loose flanges. This procedure allows the steel tubes to be joined into a piping through only a machining process without need for a welding process.
It has been customary to use a conventional machine tool to perform the flaring operation. The machine tool that has been dedicated for the flaring operation is a steel tube flanging apparatus comprising a single-stage machining head having conical rollers for spreading tube ends through a small angle and a dual-stage machining head having conical rollers for spreading tube ends through a large angle of 90°. Use of the steel tube flanging apparatus has make the flaring operation efficient.
Steel tubes for use as cold and hot water pipings have inner surfaces coated with zinc by hot dip galvanizing. When such steel tubes are flared, the zinc layer is peeled off or pressed and deformed into surface irregularities under the pressing and squeezing forces, resulting in a reduction in the sealing capability of the joined surfaces. Therefore, it has been the customary practice to forcibly remove the zinc layer with a sander or the like to provide smooth surfaces to be joined after the flaring process.
For making the above process efficient, Japanese laid-open patent publication No. H10-146623 discloses a steel tube flanging apparatus having a scraper combined with a dual-stage roller head for grinding the surfaces to be joined at the same time that the tube ends are spread through 90° by the dual-stage roller head. The disclosed steel tube flanging apparatus is effective in greatly improving the process of grinding the surfaces to be joined.
At piping construction sites, the piping plan and the actual layout details often differ from each other, making it necessary to change piping patterns Piping patterns can easily be changed if steel tubes are joined by welding on site. However, if steel tubes are joined by flanges, then they need to be returned to the machining factory where they are corrected or fabricated again. In view of this, there has been a strong demand for the flaring process to be performed on site. However, the conventional flanging apparatus for flaring steel tubes is large and heavy because it is necessary to move the single-stage machining head and the dual-stage machining head to respective positions in front of fixed steel tubes, and hence cannot easily be brought into piping construction sites.
Corrosion-resistant steel tubes have inner and outer surfaces lined with hard vinyl chloride or the like for protecting gas and water supply pipings from corrosion and stray current corrosion. For joining such corrosion-resistant steel tubes, it has been the practice to weld flanges to non-plated ends of the steel tubes and then line the inner and outer surfaces of the steel tubes and portions of the welded flanges. If the corrosion-resistant steel tubes do not match the dimensions at a piping construction site, then the corrosion-resistant steel tubes have to be processed again in the machining factory. If the piping construction site is located at a remote distance from the machining factory, the process of placing the piping has to be interrupted for a few days in order to process and deliver the steel tubes.
If steel tubes are joined by welding, then welding joints are grooved by the manufacturer and then supplied from the manufacturer. However, steel tubes themselves are supplied, not grooved, from the manufacturer, and are subsequently grooved by the user in a factory, with a large-size lathe or manually with a grinder. At a piping construction site, since steel tubes are manually grooved, a long period of time is required to machine the steel tubes and the steel tubes are liable to have an irregular finish.
To solve the above problems, Japanese laid-open patent publication No. 2002-35849 discloses a combined machining equipment for machining a steel tube, which is capable of not only flaring the steel tube, but also forming a branch tube, externally threading the steel tube, peeling a lining off the steel tube, grinding a flared surface, and grooving an end of the steel tube, and a method of machining such a steel tube. This combined machining equipment can solve many of the conventional problems. However, since this combined machining equipment is heavy and cannot easily be moved, it is not easy to use the combined machining equipment on site.
There has also been a need for the formation of flanges and conically spreading portions on ends of steel tubes for use as structural components, rather than pipings. Therefore, apparatus and methods for easily forming such flanges and conically spreading portions have also been in demand.

Composite fabrication facility of steel tube and fabrication method of steel tube


An in-pipe hydraulic turbine system includes a pipeline for fluid transport, the pipeline having an inlet and an outlet, and a turbine disposed within the pipeline, between the inlet and the outlet. The turbine is actuated by fluid moving through the pipeline and leaves usable fluid pressure downstream of the turbine.

1. Field of the Invention
The present invention relates generally to fluid turbines, and more specifically to in-pipe turbines for generating energy as a result of the movement of fluid through the turbines.
2. Background
Fluid moving through pipelines, such as, for example, water moving through water mains designed to transport potable water, are often at high pressure. In many instances, the amount of pressure in the pipeline is undesirable. In the case of potable water, for example, high-pressure water from a city water main can be damaging to pipes and appliances in a home. The water pressure can produce wear or erosion, and may cause leaks, loud noises in the pipes, and waste of water. In areas where water is scarce, wasted water due to overly high pressure in water pipelines can be a significant problem. Reducing water pressure from 100 psi to 50 psi can result in a 29% savings of water.
While excess fluid pressure can be problematic, such pressure also represents a potential energy source, where the kinetic energy of fluid flowing through a pipeline can be converted into electricity, for example.
What is needed, then, is a device for solving the problem of overly high pressure in a fluid pipeline, while at the same time providing a way to tap into the energy of the fluid moving through the pipeline.