A vertical handover method and apparatus in a wireless communication system are provided, in which a serving network selects a target network for a vertical handover of a terminal from among at least one candidate target network to which the terminal can perform the vertical handover, transmits information about the selected target network to the terminal, and requests the vertical handover of the terminal to the target network, the target network acquires a profile of the terminal from a policy store, upon receipt of the vertical handover request from the serving network, the terminal requests a connection to the target network, and the target network transmits information about a router to which the terminal will connect to the terminal, upon receipt of the connection request from the terminal and updates a proxy binding for the terminal in the policy store.

Along with the ever-increasing demands for multimedia service, studies have recently been conducted on communication technologies for increasing data rate in wireless communication systems. For example, the communication technologies include Institute of Electrical and Electronics Engineers (IEEE) 802.11 Wireless Local Area Network (WLAN) and IEEE 802.16 Wireless Metropolitan Area Network (WMAN).
WLAN, an extension of wired LAN based on IEEE 802.11, is a short-range communication technology developed to provide high-speed communication services to stationary users in a limited crowded area such as outdoors or downtown. A network supporting the WLAN technology (referred to as a WLAN network) supports data rates ranging from tens of Mbps to hundreds of Mbps to users within a service area. However, the WLAN network does not ensure mobility to users and covers a limited service area.
WMAN provides data service to users that are stationary, walk, and move at a medium speed of up to 60 km/h according to IEEE 802.16. A network supporting the WMAN technology (referred to as a WMAN network) supports average data rates of tens of Mbps. The WLMAN network ensures mobility to users and covers a wide service area.
As described above, in the case where a wireless communication system supports multiple networks owing to the development of communication technology, the networks have different characteristics.
Therefore, for the wireless communication system to select a network according to the type of a user-requested service and provide it to users, the networks should interwork reliably. That is, the wireless communication system should support seamless handover between heterogeneous networks or media.

Apparatus and method for performing vertical handover in a wireless communication system


The invention provides a moving mechanism which can be made so small and lightweight as to be portable when being contracted, which can be formed into a longer higher column than conventional potable column, and which can thus realize a large moving amount without increasing the weight thereof. The movement mechanism has a slender moving member, a driving portion for moving the moving member, a plurality of centering members each having a through hole for the moving member at the center thereof, connected to each other and are moved in linkage with the movement of the moving member so that the distance between the respective centering members can be changed, and a movement passage for supporting and guiding the movement of the centering members.

The present invention relates to a forward and backward movement mechanism (referred to as "movement mechanism" hereinafter) which enables the assembly of a long column or the like by extension without increasing the weight thereof.
A movement mechanism using a hydraulic cylinder and a screw rod is generally widely used in the fields of a telescopic boom of a crane, a telescopic column, a jack and the like.
The known movement mechanism is designed so that the buckling strength of a forwardly and backwardly moving member (referred to as "moving member" hereinafter) is born by the constituent members themselves such as a cylinder, a rod, a screw rod and the like, which constitute the movement mechanism. The movement mechanism also has no means for enforcing these members. If a movement mechanism having a long moving length is formed, the weight of the mechanism is inevitably increased. Although a movement mechanism having a long moving length can be theoretically produced, practical problems with respect to the weight, portability, containment properties and the like cannot be solved.
A jib crane using the known movement mechanism has an extension length of about 20 to 30 m. However, such a crane is a type that it is loaded on an exclusive carriage track or crawler transporter. In the present situation, a screw rod type jack has a lifting amount of several m in balance between the backward length of the screw rod and the depth of the receiving pit.
This is because since no means is provided for the buckling strength of the conventional movement mechanism for a telescopic movement in spite of the most importance of the buckling strength for design of a slender structure, the dead weight of the mechanism is inevitably excessively increased. Although there is demand for a convenient, long and portable telescopic column, such a telescopic column has not been realized so far.
However, it is thought that a movement mechanism which enables the realization of a moving length extremely longer than that of a conventional mechanism without increasing the weight and which can be contained in a compact case is very useful for various industrial fields because a work of supporting a load at a height and a work of lifting a load to a height can be easily realized by such a mechanism.


A method and apparatus for sealing films. In one embodiment the sealing device comprises a horn and an anvil. The film has a standard portion and an increased portion. Increased energy is applied to the film in the increased portion compared to the energy applied to the standard portion. Such a method allows for sealing of varying number of layers.

1. Technical Field
The present invention relates to an apparatus and method for sealing films.
2. Description of Related Art
Various materials can be sealed using ultrasonic energy. The process typically involves vibrating a horn in close proximity to an anvil. Frictional forces in the material between the horn and the anvil provide the necessary heat for sealing.
There are many disadvantages to using ultrasonic energy to seal two films. One problem is the lap seal. In many packages made of films, the seals comprise varying numbers of layers. As an example, the seal will comprise three layers at the location of the lap seal but only two layers elsewhere. If a proper amount of energy is used for the two-layer seal, then this is insufficient energy to seal at the lap seal. Likewise, if a proper amount of energy is used at the lap seal, then too much energy is applied to the seal with only two layers resulting in an inadequate seal. Consequently, it is desirable to provide a method and apparatus which can seal films having a variable number of layers.

This patent is subject to a terminal disclaimer.


A capacitance change detection device includes a sensor electrode, and an electrode capacitance measurement device for measuring capacitance of the sensor electrode on the basis of a correlation value based on a reference capacitance at every first predetermined time. A detection signal is generated when a current measurement value of capacitance is changed by equal to or greater predetermined threshold value than a measurement value obtained a second predetermined time before the current measurement value is measured. The capacitance change detection device further includes a sensitivity compensation capacitance for generating capacitance variations equivalent to specific variations of capacitance of the sensor electrode, and being switched between a connected state and a disconnected state. The threshold value is determined as a difference between measurement values of capacitance of the sensor electrode measured at the connected state and at the disconnected state. The threshold value is renewed at every third predetermined time.

Capacitance change detection devices are used for detecting a trigger for opening operation (i.e., unlock operation) of systems for controlling opening and closing of a vehicle door for such as automobiles. More particularly, when a mode of a device provided at a vehicle is switched to an unlock allowance mode because a user approaches the vehicle and a code is identified between the device provided at the vehicle and a remote controller carried by the user, and when the user further touches an unlock sensor (i.e., an electrode) provided inside of an outside handle of the vehicle door, the device provided at the vehicle detects a change of capacitance of the electrode of the unlock sensor and carries out the unlock operation. That is, the capacitance change detection devices detect an intention of a user to unlock a vehicle door as an output of an unlock sensor (i.e., a change of capacitance).
A known capacitance change detection device which generates either an electric field or an electromagnetic field around an antenna by means of an electronic circuit and the antenna connected to the electronic circuit for detecting a very little change of capacitance on the basis of a change of either the electric field or the electromagnetic field around the antenna is described in U.S. Pat. No. 5,764,145. The known capacitance change detection device described in U.S. Pat. No. 5,764,145 is configured to avoid an influence of temperature and humidity upon a change of capacitance by passing a signal from an external electric field and an electromagnetic field received via an antenna through a highpass filter.
According to the known capacitance change detection device described in U.S. Pat. No. 5,764,145, a change of capacitance because of a change of temperature and a change of humidity are excluded from objects to be detected by providing a highpass filter. In other words, with the construction of the known capacitance change detection device described in U.S. Pat. No. 5,764,145, a sensitivity regarding variations is not changed.
In U.S. patent application Ser. No. 10/951883, the applicant provides another capacitance change detection device. According to the capacitance change detection device described in U.S. patent application Ser. No. 10/951883, by repeatedly charging a pre-discharged known reference capacitance by an unknown capacitance to be measured, and the number of charging until an electric voltage at both ends of the reference capacitance reaches a predetermined electric voltage is counted. When the number of charging is reduced by equal to or greater than a predetermined threshold value, it is detected as an increase of unknown capacitance to be measured.
Further, according to the capacitance change detection device described in U.S. patent application Ser. No. 10/951883, because capacitance to be measured is changed in accordance with a change of surrounding environment (e.g., capacitance at wire harness which is connected to the capacitance to be measured, or the like, is changed because of a change of an environment), the number of charging until the electric voltage at the both ends of the reference capacitance reaches the predetermined electric voltage is varied depending on the environment. Thus, when judgment of the number of charging is performed with the same threshold value at around different environments, the judgment results may be differed from each other even when variations of the capacitance to be measured is identical. In other words, there is a drawback that sensitivity regarding variations of capacitance to be measured depends on the environment.
A need thus exists for a capacitance change detection device which detects variations of capacitance to be measured on the basis of a change of a correlation value of capacitance to be measured which is measured on the basis of a reference capacitance.


A metal-assisted chemical imprinting stamp includes a porous polymer substrate and a noble metal coating formed directly on the porous polymer substrate. Fabricating the metal-assisted chemical imprinting stamp includes providing a porous polymer substrate, and disposing a noble metal on the porous polymer substrate. Metal-assisted chemical imprinting includes positioning a silicon substrate in an etching solution, contacting a surface of the silicon substrate with a stamp comprising a noble metal layer on a surface of a porous polymer substrate, and separating the silicon substrate from the stamp to yield a pattern corresponding to the noble metal layer on the silicon substrate.

In metal-assisted chemical etching (MACE), noble metal nanoparticles, such as Au and Ag, are deposited onto a surface of a semiconductor substrate. The semiconductor substrate is immersed into an etching solution containing an acid and an oxidizing agent. The oxidizing agent reduces on the surface of the nanoparticles, resulting in the generation of charge carriers (holes), which are further injected into the semiconductor substrate. The holes lead to oxidation and subsequent dissolution of the semiconductor by the acid. The reaction confinement results at least in part from the competition between two processes: (i) the rate of hole generation and injection and (ii) the rate of hole consumption (i.e., semiconductor dissolution). Balancing these processes can result in fast and well-confined etching. However, since MACE involves mass transport (i.e., movement of reactants toward and products away from the reaction areas), the etching fidelity can be suppressed by solution depletion in the case of catalytic particles with large areas (>100×100 nm).

Metal-coated porous polymeric stamp materials for electrochemical imprinting

Arizona Board of Regents on behalf of Arizona State University

The Regents of The University of Colorado, a Body Corporate


In an open-hole section formed in a silicon oxide layer, a polycrystalline silicon layer, which will become a lower layer of an emitter electrode, is deposited and arsenic ions are implanted into it. Next, on top of the polycrystalline silicon layer, another polycrystalline silicon layer, which will become an upper layer of the emitter electrode, is deposited and implanted with a high density of arsenic ions. Through heat treatment, an N-type emitter diffusion layer is formed inside a P-type intrinsic base diffusion layer. By constructing the emitter electrode with 2 layers, the lower layer and upper layer, and by optimizing the impurity density in each of the layers, the characteristic irregularities of a bipolar transistor having minute emitter contact holes are reduced, and it is possible to increase the allowance of the formation conditions of the open-hole section which connects a wiring layer and to reduce the emitter resistance.

1. Field of the Invention
This invention relates to a semiconductor device, and in more particularly to the construction of an emitter terminal or electrode of a bipolar transistor.
2. Description of the Prior Art
The fabrication process of a prior semiconductor device is explained with reference to the drawings.
FIG. 1A to 1D show a sectional view of a semiconductor chip showing the sequence of processes in order to explain the fabrication process of a prior semiconductor device.
As shown in FIG. 1A, arsenic ions are selectively implanted into the main surface of a P-type single crystal silicon substrate 1 using an acceleration energy of 70 keV and a dose of 3.times.10.sup.15 to 1.times.10.sup.16 cm.sup.-2, and an N-type buried diffusion layer 2 is formed by performing heat treatment at a temperature of 1050.degree. to 1150.degree. C. for four hours. In the same way, boron ions are selectively implanted using an accelaration energy of 50 keV and a dose of 5.times.10.sup.13 to 3.times.10.sup.14 cm.sup.-2, and a P-type buried diffusion layer 3 is formed by performing heat treatment at a temperature of 980.degree. to 1050.degree. C. for one hour.
Next, an N-type epitaxial layer 4 with a specific resistance of 1.OMEGA. cm is formed with a thickness of 1.5 to 2.5 .mu.m on top of the P-type single crystal silicon substrate 1 which includes the N-type buried diffusion layer 2 and the P-type buried diffusion layer 3, and a P-type diffusion layer 5 is selectively formed extending from the main surface of the N-type epitaxial layer 4 to the P-type buried diffusion layer 3, insulating and isolating the elements. Then, a silicon oxide layer (field oxide film) 6 is formed with a thickness of 600 to 900 nm, using a selective oxidation method, on the surface of the N-type epitaxial layer 4, insulating and isolating the elements, and partitioning off both a first element formation region 7 and a second element formation region 8. Next, a 10 to 20 nm thick silicon oxide layer 9 is formed on the surface of the N-type epitaxial layer 4 of both the first and second element formation regions 7 and 8 using thermal oxidation at a temperature of 900.degree. C. and in an H.sub.2 -O.sub.2 atmosphere. Then, after the silicon oxide layer 9 of the first element formation region 7 has been selectively removed, a 250 to 450 nm thick polycrystalline silicon layer 10 with phosphorus doped is selectively formed and will act as a collector electrode. For example, in a semiconductor device with bipolar elements and MOS elements configured on the same semiconductor substrate, the silicon oxide layer 9 is formed using the same process as a gate oxide film, and the polycrystalline silicon layer 10 is formed simultaneously with the gate electrode. Doping of phosphorus into the polycrystalline silicon layer 10 is performed using diffusion at 830.degree. to 930.degree. C., also at the same time, phosphorus is diffused into the N-type epitaxial layer 4 passing through the polycrystalline silicon layer 10 forming an N-type collector diffusion layer 11. Next, using an acceleration energy of 10 to 30 keV and a dose of 1.times.10.sup.13 to 5.times.10.sup.13 cm.sup.-2, boron ions are implanted into the surface of the N-type epitaxial layer 4 of the second element formation region 8 to form a P-type intrinsic base diffusion layer 12, and boron ions are selectively implanted into a portion of the P-type intrinsic base diffusion layer 12 using an acceleration energy of 10 to 30 keV and a dose of 3.times.10.sup.15 to 1.times.10.sup.16 cm.sup.-2 to form a P-type base extrinsic diffusion layer 13.
Next, as shown in FIG. 1B, a 250 nm thick silicon oxide layer 14 is deposited on all surfaces using a CVD (chemical vapor deposition) method, and an open-hole region is selectively prepared in the silicon oxide layer 14 above top of the P-type intrinsic base diffusion layer 12, and in the open-hole region, a 200 nm polycrystalline silicon layer 15 with arsenic doped is selectively formed as an emitter electrode. Arsenic is doped into the polycrystalline silicon layer 15 by implanting arsenic ions using an acceleration energy of 70 keV and a dose of 5.times.10.sup.15 to 2.times.10.sup.16 cm.sup.-2, and then by forcing the arsenic using heat treatment at 900.degree. to 950.degree. C. an N-type emitter diffusion layer 16 is formed inside the P-type intrinsic base diffusion layer 12.
As shown in FIG. 1C, an interlayer insulating film 17 comprised of two layers is prepared by depositing in succession using the CVD method, a 100 nm thick silicon oxide layer and a 500 nm thick BPSG layer on top of the silicon oxide layer 14 including the polycrystalline silicon layer 15, and then in order to smooth the surface, heat treatment is performed at 850.degree. to 920.degree. C. after which holes are selectively opened in the interlayer insulating film 17 and open-hole regions 18, 19, and 20 are selectively formed extending to the collector terminal or electrode 10, emitter terminal or electrode 15 and the P-type base extrinsic diffusion layer 13.
Next, as shown in FIG. 1D, an aluminum layer is deposited on the surfaces which contain the open-hole regions 18, 19, and 20, it is then patterned and the wirings 21 connecting the collector electrode 10, the emitter electrode 15 and the P-type base extrinsic diffusion layer 13 are formed interconnecting the elements in the semiconductor device.
In the prior semiconductor device, the surface of the interlayer insulating film 17 needed to be flattened sufficiently in order to prevent shorts and breaks in the wiring layers 21 which are formed in a later process. The vertical distances from the surface of the interlayer insulating film 17 to the collector electrode 10, the emitter electrode 15 and the P-type base extrinsic diffusion layer 13 are 850 nm, 600 nm and 850 nm respectively at the time the interlayer insulating film 17 is deposited. However, after heat treatment, they change to approximately 900 nm, 500 nm and 950 nm. If the open-hole regions 18, 19 and 20 are formed by, for example, plasma etching using a CHF.sub.3 --O.sub.2 family gas, it is necessary to set etching conditions which match the film thickness of the silicon oxide layers on top of the P-type base extrinsic diffusion layer 13. When the etching ratio for the ply crystalline silicon layers 10 and 15 and silicon oxide layers 6 and 14 using the gas family mentioned above is 1:6, the emitter electrode 15 is etched and removed by at least 80 nm [(950-500)/6=75 nm] thick during plasma etching. Under the above conditions, the thickness of the emitter electrode 15 is actually reduced from 200 nm to 120 nm. This differs depending on how large or small the heat history is after the aluminum wiring 21 is formed in a later process, however, in order that there are no changes in the bipolar transistor characteristics due to the reaction of the aluminum wiring layer 21 with the polycrystalline silicon of the emitter electrode 15, it is necessary that the film thickness of the emitter electrode 15 be 70 to 100 nm after the open-hole region 19 is formed. Therefore, a film thickness for the emitter electrode 15 of 180 nm or more, or if the irregularities occurring during fabricating are considered, a thickness of 200 nm or more is desirable.
On the other hand, in order to make high-integration and high-performance of the elements possible, the open-hole region (emitter contact hole) formed on the silicon oxide layer 14 is gradually reduced. For example, for a 250 nm thick silicon oxide layer 14, a width of 700 nm and a length of 3 .mu.m are applicable dimensions. In order to reduce the irregularities in the element characteristics of the bipolar transistor, it is necessary that the thickness of the polycrystalline silicon layer 15 is the same as that of the silicon oxide layer 14, and in order to reduce the irregularities of the quantity of arsenic ions implanted into the emitter electrode 15 in a later process, it is necessary that the width of the selected open-hole be three times or more the thickness of the emitter electrode 15. Thus, it is necessary that the thickness of the emitter electrode 15 be 230 nm or less.
In the prior semiconductor device described above, irregularities in the characteristics of the bipolar transistor are large due to irregularities during fabricating. Also, there is a problem in that product yield drops easily.
Also, in order to make the width of the emitter contact holes even smaller, a problem exists in that the reduction in the width cannot be dealt with expansion of the prior fabricating technology, i.e. with only a reduction in the dimensions in the vertical and horizontal directions.

Semiconductor device with improved electrode structure


The invention relates to a filter cartridge (1), especially a suction filter cartridge, which is provided, in the outlet opening (20), with an inward-pointing, peripheral snap-on rim (22) which can be folded from a first lower snap position into a second upper snap position and vice versa. The invention also relates to a seat element (30) for such a filter cartridge, comprising a connection sleeve (33) which engages with the outlet opening (20) of the filter cartridge (1). Said connecting sleeve (33) comprises at least one actuator which displaces, when the filter cartridge (1) is placed on the rim, the snap-on rim from a first lower snap position to the second upper snap-on rim from a first lower snap position to the second upper snap positioning which the snap-on rim rests against the connecting sleeve (33) in a sealing and clamping manner.

1. Field of the Invention
The invention relates to a filter cartridge, in particular a suction filter cartridge, according to the preamble of claim 1. The invention also comprises a seat element for such a filter cartridge. The inlet area and the outlet opening of the filter cartridge are arranged at the bottom area of the filter cartridge, which also includes a lateral inlet or outlet in a lower section of the inflow and outflow chamber adjacent to the bottom.
2. Description of Related Art
Suction filter cartridges are used in water vessels of automatic drink dispensers, e.g., for hot drinks, provided with a suction pump, such as e.g., coffee makers etc. The inlet and outlet openings of the suction filter cartridge are located in the bottom area of the otherwise completely enclosed cartridge housing. A seat element is arranged in the water vessel of the device, adjusted to the outlet opening, which may be a separate component or be formed at a water vessel. This seat element has an outlet opening as well, through which the filtered water can flow out of the water vessel. The seat element serves to accept the suction filter cartridge inserted into this seat element.
Due to the fact that the outlet opening of the water vessel is connected to the suction pump of the device, the water to be filtered is suctioned out of the water vessel, passes the filter medium or filter media in the cartridge, and reaches the outlet opening in a filtered state.
Due to the fact that the suction filter cartridge is arranged inside the water vessel of the device the filter cartridge floats when the water vessel is filled. In order to prevent floating and thus a separation of the filter cartridge from the outlet opening of the seat element of the water vessel special fastening means are provided. According to a known solution the suction filter cartridge is screwed onto the seat element. Here it is disadvantageous that suction filter cartridges with an asymmetrical filter housing cannot be screwed into narrow water vessels. Additionally, in deep and narrow water vessels tools are necessary to screw in the cartridge.
Another resolution provides for the suction filter cartridge to be placed onto the seat element and to turn over a clamping element after the insertion in order to fix the suction filter cartridge in its position.
From WO 99/01220 a suction filter cartridge is known, in which the water inlet opening is arranged at the bottom and a pass for water through the filter media is provided in the up-current. Furthermore, a downspout is provided for guiding the water downwards to an extraction connector of the water vessel located at the bottom. Here, the mixture of filter means comprising activated carbon and ion exchangers are floated during operation, counteracting any compression of the filter bed.
The downspout is arranged centrally inside the suction filter cartridge, so that the bottom connector of the suction filter cartridge can also occur centrally. Here, the inlet opening is arranged circularly in the suction filter cartridge.
An axial closing element is necessary to seal the outlet channel from the inlet channel.
The suction filter cartridge comprises at its bottom fixing elements, by which it can be connected to a seat element. Additionally it is necessary, though, that the suction filter cartridge is supported on the lid of the water vessel in order to prevent floating of the suction filter cartridge in a filled water vessel. Here, it may be necessary in deep water vessels to extend the suction filter cartridge at the top, e.g. by a rod.
Such additional securing elements are frequently not arranged correctly, thus the tight seat on the seat element is not ensured.

Filter cartridge including a snap-on rim connector


A cup holder assembly includes a receptacle. A base defining a recess is also included. The base is pivotable with respect to the receptacle between a stored position in which the base is substantially inside the receptacle and a use position in which the base is at least partially outside the receptacle. A partial ring is supported by the receptacle and slides in the channel in one direction such that the partial ring is contained substantially within the channel when the base is in the stored position and slides in the channel in another direction to extend between the receptacle and the base when the base is in the use position to cooperatively form with the base a circumferential support for receiving and at least partially supporting a container.

Cup holders are typically provided in vehicles for both front and rear passengers. Some cup holders are collapsible to be hidden from view when not in use. Cup holders may be packaged within the instrument panel, the console or the doors of a vehicle. Designers continue to strive for ways to reduce the packaging size and the number of parts required for functional cup holders.

Cup holder assembly with sliding partial ring


The printable substrate of biaxially multi-layered laminate material is perforated to define a flap overlying a window having a frame. The window is sized to allow the tag body to be passed through it and thereby secure the tag to an article. The tag substrate may be provided as a continuous web that has been perforated to define multiple tags, suitable for printing and dispensing by automated mechanism.

The present invention relates generally to tags and labels. More particularly, the invention relates to a printable tag with integral fastener suitable for being printed and dispensed by mechanical means. The integral fastener allows the tag to be quickly attached to goods, shipping containers or dunnage, without the need to install a separate string or wire fastener.
Shipping tags and labels are used throughout industry for inventory control, shipping origin and destination addressing, component identification, just-in-time manufacturing, specimen labeling, and the like. Traditionally, most industries have used a simple paper tag with separate wire or string fastener, designed to be written on by hand and then attached to the article. Although this paper tag can be printed on and dispensed mechanically, the wire or string fastener must be installed separately so as not to jam the feeding and printing apparatus.
With the prevalence of many inventory management systems, process flow control systems and shipping systems now operating under computer control, there is considerable interest in a printable tag that works in this automated environment. Desirably, the tag should be printed and dispensed as part of the automated manufacturing, shipping and/or storage process, with the tag being ready for immediate application to the article. In this way, accurate correlation between the tag and the article is ensured and the manufacturing, shipping and/or storage process proceeds efficiently.
To meet the needs of today""s automated environments, the invention provides a printable tag with integral fastener that requires no separate string or wire fastener. The tag employs a printable substrate that is provided with a first slit which defines a flap overlying a window with a frame. A second slit, extending from one edge of the substrate, defines a first locking tab. A third slit, extending from another edge of the substrate, defines a second locking tab. The window is sized to allow the tag body to be passed through it.
In use, the tag is applied by wrapping or looping the tag body around the article to be tagged, and inserting the second end of the tag body into the window and pulling the tag tight.
The presently preferred tag is a biaxially multi-layered laminate of polyethylene with a matte top coating to support printing by suitable thermal printer or laser printer.
For a more complete understanding of the invention, its objects and advantages, refer to the following specification and to the accompanying drawings.


A medication dispenser includes a thermal drop generator ejector head. Medication is maintained in a pressurized container connected to a valve under the control of control electronics and to a compliant chamber. Fluid flows from the container to the chamber and to the ejector head. In a first mode the dispenser is operable to dispense aerosolized medication. In a second mode the ejector head is purged with fluid from the container to maintain the ejector head.

Medications are often delivered to patients in the form of inhaled aerosols—gaseous suspensions of very fine liquid or solid particles in which medications are entrained. So-called pulmonary delivery of medication is in many instances a very efficient manner of delivering biological and chemical substances to the patient's bloodstream. Pulmonary delivery is especially efficient when the medication is delivered with a digitally controlled device such as a "metered dose inhaler" ("MDI") or other type of inhaler that incorporates ejector heads that are suitable for creating aerosols having very small droplet size. Such inhalers are often used to deliver asthma medications directly into a patient's lungs where the medications are rapidly absorbed into the blood stream.
As with any device intended to deliver medication to a patient, it is essential that an inhaler is maintained in proper operating condition to ensure, among other things, that the proper dosage of medication is administered to the patient, and that the device is suitably clean. However, the ejector heads that are used in digital inhalers such as MDIs can become clogged over time and repeated use. Moreover, some types of medications can accumulate on the surfaces of the ejector head. In both cases, whether one or more nozzles becomes clogged or the nozzle orifice size is reduced due to accumulated residue, the dosage of medication delivered to the patient may be affected, resulting in a lower dosage than might be needed. Clogging and accumulated residue may also impact the cleanliness of the inhaler.
There is an ongoing need to provide inhalers with smaller and very precisely controlled drop sizes. As these requirements increase, there is an ongoing need to provide such inhalers and other medication delivery apparatus having improved reliability.

Inhaler nozzle maintenance apparatus and method

Hewlett-Packard Development Company, L.P.


A platform is positioned within an environment. The platform includes an image capture system connected to a controller implementing a neural network. The neural network is trained to associate visual features within the environment with a target object utilizing a known set of input data examples and labels. The image capture system captures input images from the environment and the neural network recognizes features of one or more of the input images that at least partially match one or more of the visual features within the environment associated with the target object. The input images that contain the visual features within the environment that at least partially match the target object are labeled, a geospatial position of the target object is determined based upon pixels within the labeled input images, and a class activation map is generated, which is then communicated to a supervisory system for action.

Object recognition from imagery often relies on highly trained operators to perform careful imagery analysis for hours at a time. Existing techniques to automate this process are based on traditional computer vision algorithms and rely on standard image enhancing methods such as contrast adjustment, brightness adjustment, Fast Fourier Transform methods, etc. However, these methods are not typically accurate enough to replace a human operator and allow for an automated system that can be used in unique domains, such as an underwater environment. There is a need for an improved unmanned autonomous system that can detect and classify specific objects as targets of interest in environments including an underwater environment.

Machine learning based automated object recognition for unmanned autonomous vehicles

United States of America as represented by the Secretary of the Navy


A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided.

Semiconductor wafers such as silicon wafers having different thicknesses, which are sufficiently mechanically stable for handling, are used for manufacturing of semiconductor devices and integrated circuits. In most cases, comparably thick wafers are needed mainly for mechanical reasons during manufacturing but not for the final devices.
For many applications, for example electronic components such as fast-switching CMOS circuits, parasitic electrical coupling of the individual devices of the circuit to the large semiconductor volume of the wafer may result in unwanted coupling between individual devices and can limit the switching speed. Therefore, silicon-on-insulator (SOI) wafers are often employed. Such wafers include a buried oxide layer which electrically insulates the silicon layer used for forming the devices from the remaining semiconductor substrate. However, SOI-wafers are comparably expensive.
On the other hand, thin monocrystalline semiconductor wafers are desired for many applications such as devices for chip cards or devices where the current path goes from the top surface to the bottom surface. For such thin wafers additional carriers are needed for mechanical reason during processing. Although the additional carriers improve the mechanical stability, additional costs incur. Furthermore, the carriers often tolerate only moderate processing conditions to which the semiconductor wafers are subjected and therefore limit their application.
For example carriers such a glass carriers glued to semiconductor wafers are often limited to temperatures below 350° C. due to the limited thermal stability of the adhesive. Glass carriers are also prone to breaking so that care must be taken during low pressure and vacuum processes. On the other hand, expensive SOI carrier system can withstand high temperatures but their manufacturing, particularly the bonding processes of partially or completely processed wafers are technologically difficult.

Method for manufacturing a composite wafer having a graphite core


An endodontic instrument for root canal treatment is provided having a working portion manipulated by a handle and a connection assembly for attachment with an electronic apex locator. The connection assembly allows the electronic apex locator to be connected to the instrument at or through the coronal end of the handle. Preferably, the connection assembly includes a male/female assembly located within or on the surface the file handle.

Traditional endodontic files consist of a tapered cutting flute portion having a shaft connected to a handle that is gripped by a user such as, for example, a dentist or an endodontist. Endodontic files are used to remove the contents of a root canal and to prepare and/or shape the root canal prior to filling it. Endodontic files are also used to determine the length of the root canal by connecting an electronic apex locator to the endodontic file. An electronic apex locator is an electronic measuring device used to determine the length of root canals.
FIG. 1 shows a traditional endodontic file 10 with tapered cutting flutes 12 located at one end of a shaft 14 secured to a handle 16 that is grasped by a user to perform the root canal procedure. Typically, shaft 14 is connected to an apical end 18 of handle 16 and the user grasps handle 16 to perform the root canal procedure.
As seen in FIG. 2, an electronic apex locator (not shown) is connected to the endodontic file 10 by an electrically conductive clip or other mechanism 22 attached to shaft 14 between tapered cutting flutes 12 and handle 16 in order to measure the length of the root canal. Clip 22 is connected to the apex locator by an electrically conductive wire 23 and tapered cutting flutes 12 and shaft portion 14 are made of an electrically conductive material so that electrical signals can be sent from tapered cutting flutes 12 to the apex locator. One problem of the assembly shown in FIG. 2 is that clip 22 is typically attached to shaft 14 between tapered cutting flutes 12 and handle 16 forming a 90° angle lever on shaft 14.
This location of attachment of clip 22 to shaft 14 is undesirable because it impairs visibility. Additionally, unwanted lateral forces may be imparted to shaft 14. Such forces impair the dexterity of file manipulation and impair the angle of file insertion into the root canal. Furthermore, attaching the electronic apex locator to shaft 14 prevents the use of an electrical insulating sheath on shaft 14.
Endodontic instruments are also shown in described in U.S. Pat. No. 4,260,379 (Groves et al.), U.S. Pat. No. 4,332,561 (McSpadden), U.S. Pat. No. 4,824,369 (Levy), U.S. Pat. No. 5,112,224 (Shirota), U.S. Pat. No. 5,213,499 (Levy), and U.S. Pat. No. 5,775,903 (Atkins), and Buchanan (U.S. Pat. No. 4,836,780), the entire disclosures of which patents are hereby incorporated by reference as if set forth in their entirety for all purposes.


A method of testing a surgical system that takes advantage of the fact that in a balanced irrigation/aspiration system (inflow≧outflow) the duration of the aspiration pressure recovery to the irrigation fluid source pressure immediately following pump stop is independent of pump run time. This method provides a more reliable way of detecting restricted irrigation flow configurations not detectable by the current methods, such as marginal irrigation flow cases that could potentially lead to surgical complications (e.g. chamber collapse during post-occlusion break surge).

This invention relates generally to the field of cataract surgery and more particularly to a surgical parameters control method for use with a phacoemulsification system.
The human eye in its simplest terms functions to provide vision by transmitting light through a clear outer portion called the cornea, and focusing the image by way of the lens onto the retina. The quality of the focused image depends on many factors including the size and shape of the eye, and the transparency of the cornea and lens.
When age or disease causes the lens to become less transparent, vision deteriorates because of the diminished light which can be transmitted to the retina. This deficiency in the lens of the eye is medically known as a cataract. An accepted treatment for this condition is surgical removal of the lens and replacement of the lens function by an artificial intraocular lens (IOL).
In the United States, the majority of cataractous lenses are removed by a surgical technique called phacoemulsification. During this procedure, a thin phacoemulsification cutting tip is inserted into the diseased lens and vibrated ultrasonically. The vibrating cutting tip liquefies or emulsifies the lens so that the lens may be aspirated out of the eye. The diseased lens, once removed, is replaced by an artificial lens.
A typical ultrasonic surgical device suitable for ophthalmic procedures consists of an ultrasonically driven handpiece, an attached cutting tip, and irrigating sleeve and an electronic control console. The handpiece assembly is attached to the control console by an electric cable and flexible tubings. Through the electric cable, the console varies the power level transmitted by the handpiece to the attached cutting tip and the flexible tubings supply irrigation fluid to and draw aspiration fluid from the eye through the handpiece assembly.
The operative part of the handpiece is a centrally located, hollow resonating bar or horn directly attached to a set of piezoelectric crystals. The crystals supply the required ultrasonic vibration needed to drive both the horn and the attached cutting tip during phacoemulsification and are controlled by the console. The crystal/horn assembly is suspended within the hollow body or shell of the handpiece by flexible mountings. The handpiece body terminates in a reduced diameter portion or nosecone at the body's distal end. The nosecone is externally threaded to accept the irrigation sleeve. Likewise, the horn bore is internally threaded at its distal end to receive the external threads of the cutting tip. The irrigation sleeve also has an internally threaded bore that is screwed onto the external threads of the nosecone. The cutting tip is adjusted so that the tip projects only a predetermined amount past the open end of the irrigating sleeve. Ultrasonic handpieces and cutting tips are more fully described in U.S. Pat. Nos. 3,589,363; 4,223,676; 4,246,902; 4,493,694; 4,515,583; 4,589,415; 4,609,368; 4,869,715; 4,922,902; 4,989,583; 5,154,694 and 5,359,996, the entire contents of which are incorporated herein by reference.
In use, the ends of the cutting tip and irrigating sleeve are inserted into a small incision of predetermined width in the cornea, sclera, or other location. The cutting tip is ultrasonically vibrated along its longitudinal axis within the irrigating sleeve by the crystal-driven ultrasonic horn, thereby emulsifying the selected tissue in situ. The hollow bore of the cutting tip communicates with the bore in the horn that in turn communicates with the aspiration line from the handpiece to the console. A reduced pressure or vacuum source in the console draws or aspirates the emulsified tissue from the eye though the open end of the cutting tip, the cutting tip and horn bores and the aspiration line and into a collection device. The aspiration of emulsified tissue is aided by a saline flushing solution or irrigant that is injected into the surgical site though the small annular gap between the inside surface of the irrigating sleeve and the cutting tip.
Prior to use in surgery, the various handpieces, tubings and fluid management cassettes all need to be purged of air or primed. During the priming stage, current phacoemulsification systems also run an aspiration system diagnostic step to test for leaks or blockages in the aspiration system. During this diagnostic step, the system pump is activated to generate a certain vacuum in the aspiration line. If the system is not able to reach the desired vacuum level, this indicates to the system that there is a leak somewhere in the aspiration system, and the system will sound a warning for the operator. On the other hand, inability to release previously build vacuum indicates that there is a blockage in the system, such as a kink in one of the tubings.
Following the priming step, a flow check is performed specifically intended to verify an adequate fluid flow through the surgical handpiece. Current phacoemulsification systems use a small rubber test chamber that fits over the cutting tip and sleeve. The test chamber is filled with the irrigation fluid and when placed on the handpiece creates a closed compliant aspiration system. During this test an excessive vacuum level for a given pump speed would indicate a flow restriction in the fluidic path. Also, a manual check can be performed by the user to ensure that the test chamber is filled and pressurized upon test completion. A deflated test chamber would be an indication of the irrigation flow restriction.
While this priming and diagnostic system procedure is effective, it can cause some compromises with current phacoemulsification system technology. For example, phacoemulsification tip technology has evolved over the years and many different tip styles and diameters are now available. As will be understood to one skilled in the art, an aspirating tip with a small diameter or bore will naturally have a higher resistance to flow than a large bore tip. Therefore, at any given pump speed, a small bore tip will create a higher vacuum in the aspiration line than a large bore tip. As a result, diagnostic settings that use a vacuum level compatible with a small bore tip may not be appropriate when a large bore tip is used, and visa versa. This can lead to inaccuracies and false warnings by the system. Similar inaccuracies can result from different sized tubings and handpieces. Also, a reliance on the user to verify a proper test chamber state following the diagnostics completion is subjective and susceptible to a human error.
Therefore, a need continues to exist for a method of priming and testing phacoemulsification systems that is accurate for a wide variety of handpieces, tubings and tip.


A method for generating a test file, that includes parsing annotated test code written in a source language to create a data structure representation of the annotated test code, generating test code in a markup language according to a plurality of testing definitions using the data structure representation, and storing the test code in the markup language in the test file.

In general, software testing is a systematic process designed to find differences between the expected behavior of a software system as specified in a software requirements document and the actual behavior of the software system. In other words, software testing is an activity for finding defects, commonly known as bugs, in the software system.
Complex software systems are tested, at least in part, using automated testing tools. More specifically, tests are developed to test specific requirements or features of a software system. A test may be source code and any accompanying information that exercises a particular feature, or part of a feature of a software system. Further, each test may include one or more test cases directed to specific requirements of the feature, or part of a feature to be tested. These tests are provided as input to an automated testing tool that uses the test cases to test the software system.
Typically, the source code in the tests is encoded in the same programming language as that used to develop the software system. However, the tests themselves are defined using the preferred input language of the automated testing tool, e.g., a scripting language, markup language, etc. In such a scenario, the test source code is created separately and manually inserted into the test definition written in the preferred input language. For example, some automated testing tools for Java compatibility testing require the tests to be written in extended markup language (XML). For such automated testing tools, a document type definition (DTD) is created that specifies the XML format of test definitions. The tests are then directly written in the specified DTD format (i.e., the tests are written in XML in accordance with the specified DTD format) and fragments of JAVA™ code are inserted as needed into these test definitions. JAVA™ is a trademark of Sun Microsystems™, Inc. located in Santa Clara, Calif.

Method and system for generating a test file


In an impact-absorbing member which extends in a vehicle length direction of an automobile and whose both end portions in the vehicle length direction have a collision-side end portion and a non-collision-side end portion whose positions become mutually different when seen from the vehicle length direction, an outer member and an inner member of the impact-absorbing member are formed so that a position of a gravity center at the collision-side end portion and a position of a gravity center at the non-collision-side end portion become mutually different according to a positional relationship between the collision-side end portion and the non-collision-side end portion in order to suppress a tensile stress generated at the collision-side end portion and suppress a compressive stress generated at the non-collision-side end portion in a collision.

A monocoque structure is the mainstream of a vehicle body of an automobile. The monocoque structure is normally configured such that a steel sheet is press-formed into a component having a flange, which is called a hat component, flange portions are then assembled together into a box shape through spot welding or the like, and those plurality of box-shaped components are mutually joined. Among those structural members, structural members such as side members and a side sill as illustrated in FIG. 1 are required to have performance of absorbing impact in a collision, which is so-called impact-absorbing performance.
For example, side members of an automobile include front side members for absorbing impact in a front-end collision, and rear side members for absorbing impact in a rear-end collision. As illustrated in FIG. 2 (perspective view) and FIG. 3 (plan view), front side members include one which is attached to a right side of a vehicle and one which is attached to a left side of a vehicle. Further, the front side member is configured in a manner that a front part of the front side member having an impact-absorbing member and a rear part of the front side member which is connected to a cabin side and which has a curved portion, are mutually joined. The front part of the front side member has an impact-absorbing function for absorbing impact in a front-end collision, and the rear part of the front side member has a deformation suppressing function with which a deformation is difficult to occur in a collision.
Further, as illustrated in FIG. 4 (perspective view), rear side members also include one which is attached to a right side of a vehicle and one which is attached to a left side of a vehicle. The rear side member is configured in a manner that a rear part of the rear side member having an impact-absorbing member and a front part of the rear side member which is connected to a cabin side and which has a curved portion, are mutually joined. The front part of the rear side member has a deformation suppressing function with which a deformation is difficult to occur in a collision, and the rear part of the rear side member has an impact-absorbing function for absorbing impact in a rear-end collision.
Here, the "impact-absorbing member" in the present description indicates a member which absorbs (alleviates) impact when being buckled and subjected to large plastic deformation (for example, axial collapse deformation or bending deformation) due to a compressive force in a collision. The impact-absorbing member is subjected to large plastic deformation in a collision, so that it is disposed on at least either a vehicle outer side in a vehicle length direction or a vehicle outer side in a vehicle width direction with respect to a place occupied by a passenger, from a viewpoint of securing a space for the passenger in the collision. In a case of each of front side members exemplified in FIG. 5 (plan view), a part in front of a front sub-frame to be an attaching portion of a front suspension component, namely, a straight portion on a vehicle outer side in a vehicle length direction L, is the impact-absorbing member. Meanwhile, in a case of a rear side member exemplified in FIG. 6 (side view), a part behind a rear sub-frame to be an attaching portion of a rear suspension component, namely, a straight portion positioned on a vehicle outer side in the vehicle length direction L, is the impact-absorbing member. Further, when a side member has a bent portion, a straight portion which is positioned on the vehicle outer side in the vehicle length direction relative to the bent portion, is the impact-absorbing member. Note that a shape of the "straight portion" is not limited to a strictly straight shape with no bent portion in the vehicle length direction L, but includes a substantially straight shape. Further, the "impact-absorbing member" in the present description does not include a crash-box which is sometimes provided to a front end portion of a front side member or a rear end portion of a rear side member.
In order to improve safety in an automobile collision, it is required to increase impact-absorbing performance of such an impact-absorbing member. Patent Documents 1 to 3 describe conventional impact-absorbing members.
Patent Document 1 discloses a technique in which a plurality of beads are arranged on each of an outer panel and an inner panel that form a front side member of an automobile, the beads on the outer panel and the beads on the inner panel being displaced by a half pitch. Since such beads are provided, when an impact load is applied, a bellows-like axial collapse deformation occurs from each of those plurality of beads which is set as a starting point. Patent Document 1 improves impact-absorbing performance with the above-described configuration.
Patent Document 2 discloses a technique in which, in a chassis offset frame for a truck, there is provided a stress-concentration assisting means at a portion on an opposite side in a vertical direction of a stress-concentrated portion to be a break starting point when an impact load is applied, in order to increase impact-absorbing performance. In Patent Document 2, by providing such a stress-concentration assisting means, a stress value in the vicinity of the break starting point is set to be substantially constant, to thereby suppress a break in a Z-shape. In Patent Document 2, a bellows-like axial collapse deformation is made to occur between the break starting points because of the above-described configuration, thereby improving the impact-absorbing performance.
Patent Document 3 discloses a side member formed of a front member which extends in a vehicle length direction, a middle member which extends rearward by being bent from a rear end portion of the front member, and a rear member which extends rearward from a rear end portion of the middle member. In Patent Document 3, impact in a collision is absorbed with the use of this side member. Note that a vehicle structure to which the side member of Patent Document 3 is attached is a vehicle structure of a so-called cab-over type in which a part of a floor panel bulges upward, an engine is housed in an inner space provided by the bulged floor panel, and a passenger seat is arranged above the engine. In a case of such a vehicle structure, if, out of the front member, the middle member, and the rear member that form the side member, the middle member is subjected to large plastic deformation as an impact-absorbing member, a part below the passenger seat is deformed, which causes a problem regarding securement of a space for a passenger. For this reason, the impact-absorbing member of the side member described in Patent Document 3 is the front member.

Impact-absorbing member and side member of automobile


Systems and methods of generating an RF stimulus signal with different power levels for IC testing. A DC modulating signal is used to power modulate a radio frequency (RF) carrier signal and thereby generate an RF stimulus signal at varying power levels. The DC modulating signal includes a sequence of DC waveforms at different voltage levels. A DC voltage transition in the modulating signal instantaneously triggers the transition of an output power in the RF stimulus signal. Reference waveforms that can cause a known response pattern in a DUT may be added at the beginning of the modulating signal for data calibration purposes.

In semiconductor manufacturing, automatic test equipment (ATE) is used to test integrated circuit (IC) devices, e.g., to characterize electrical properties, detect abnormalities, and evaluate product quality. During testing operations, stimulus signals are generated and provided to devices under test (DUTs) and the resultant output signals generated from the DUTs are evaluated against the expectation values.
A variety of standard IC tests require using a continuous wave (CW) RF signal having different power levels as the stimulus signal to a DUT, such as the gain and linearity tests for RF amplifies. Conventionally, varying the output level of an RF signal generator is accomplished by changing the internal state of the generator. In a typical RF generator, an automatic level control (ALC) feedback loop, in conjunction with an amplitude modulator and a variable attenuator, are used to ensure delivery of accurate signal levels to a DUT.
However, the utilization of the feedback loop inevitably and disadvantageously prolongs the transition time from one RF output level to another in terms of power, frequency, or amplitude, etc. For instance, in a linearity test on an RF power amplifier, it requires a power sweep across a given range. Commonly, the time it takes to switch an RF output in power or frequency is around 1 ms, and the time it takes to perform a test at one power level is around 20 μs. So, to measure over a 20 dBm range, the theoretical best time one can achieve is 20×(1.0+0.02) ms=20.4 ms. This demonstrates that the test throughput is predominantly limited by the transition times for switching of RF output levels, which leads to undesired increases in device manufacturing time and cost.

Generation of RF stimulus signal using DC modulating signal


An intramedullary bone device comprises a distal outer member, a proximal outer member for positioning in substantial axial alignment with the distal outer member, the distal and proximal outer members each having at least one opening in a wall thereof. The distal outer member and the proximal outer member each have a passage therein. The device also has a distal inner member sized to be slideably received within the passage of the distal outer member and a proximal inner member sized to be slideably received within the passage of the proximal outer member. An extender/retractor is able to selectively extend or retract to selectively lengthen or shorten, respectively, the device. The device has pins movable between a retracted position and an extended position, wherein the pins extend through the at least one opening in the distal and proximal outer members to fix the device to a bone during use.

Fixation and stabilisation of fractures can be difficult, especially in long bones. Two techniques are normally used. The first technique involves placing a plate on one side of the bone and screwing the plate to the bone on either side of the fracture with a plurality of screws. This technique suffers from the disadvantage that forces are applied to the bone via the screws from one side of the bone only, which can cause uneven loading on the bone.
The second technique for fixation and stabilisation of fractures involves inserting an intramedullary pin into the medullary canal of the bone. Fixation pins may or may not be used. If fixation pins are not used, the bone at either side of the fracture may rotate around the intramedullary pin which leads to misalignment of the bone. If fixation pins are used, it is necessary to drill holes through the bone on either side of the fracture and insert fixation pins through the holes in the bone with those in the intramedullary pin, thereby complicating the operative procedure and potentially causing an increase in post-operative recovery time for the patient.
Fixation of prosthesis, such as artificial hips and artificial knees, also faces similar difficulties. For example, fitting an artificial hip to a patient typically involves preparing the upper part of the femur and inserting a stem portion of the hip prosthesis into the medullary canal of the femur. The stem is fixed to the femur by bone cement or by inserting external pins through holes drilled through the femur and into and through holes in the stem portion of the artificial hip. The difficulties with using external pins have been discussed above. In cases where bone cement is used, misalignment and shifting of the prostheses can occur if the cement does not adequately adhere to the bone.
My Australian patent no. 755111 describes an intramedullary bone fixation device which uses a plurality of extendable pins to fix the device to the bone. In use of this device, the device is inserted into the medullary canal of a bone and the pins extended such that they extend into the bone surrounding the medullary canal to thereby fix the device to the bone. The entire contents of my Australian patent no. 755111 are herein incorporated by cross-reference.
FIG. 13 of my Australian patent no. 755111 shows an intramedullary bone fixation device that is of expandable length. This device includes an inner member having first and second portions and an outer member having first and second portions. The first portion of the inner member includes a bore having a threaded portion. A bore is also included in the second portion of the inner member, with the bore of the second portion terminating in a blind end. A screw is threadably inserted into the bores of the inner member pieces. When the screw has been fully inserted, the end of the screw strikes the blind end. Further rotation of the screw then acts to expand the length of the inner member by pushing apart the two portions of the inner member. As the pins have been inserted into the bones surrounding the medullary canal, extending the length of the inner member also extends the length of the outer member. The device shown in FIG. 13 of my earlier Australian patent number 755111 is used by pre-setting the device at a desired length. However, once the length of the device has been set, it is a static device. The screw locks the proximal and distal components in the desired pre-set position.
The device shown in FIG. 13 of my earlier Australian patent no. 755111 can suffer from the following problems:
a) the screw can become stuck when it contacts the end of the blind bore in the second part of the inner member. This problem is exacerbated by the threaded screw being in threaded engagement with the bore in the second member and the combination of the threaded engagement and contact with the blind end of the bore making it very difficult, if not impossible, to further turn the screw; and
b) the device shown in FIG. 13 of my earlier Australian patent no. 755111 is not able to shorten the length of the device because turning the screw in the opposite direction simply unscrews the screw from the threaded bores.
My earlier international patent application no. PCT/AU0301207, published as WO 2004/026158, relates to fixation devices which include pins that can be moved from a retracted to an extended position. The entire contents of my earlier international patent application no. PCT/AU03/01207 are also incorporated herein by cross-reference.
The applicant does not concede that the prior art discussed herein forms part of the common general knowledge in this art in Australia.
Throughout this specification, the terms "comprising" and its grammatical equivalents are to be taken to have an inclusive meaning unless the context indicates otherwise.
The applicant does not concede that the prior art discussed in this specification forms part of the common general knowledge in Australia or any other country.


A polycrystalline silicon rod for preparing a monocrystalline silicon rod by a floating zone method, wherein at least a central portion of the section of the polycrystalline silicon rod has coarsened silicon monocrystalline grains around the center over an area of or above the minimum section of a molten zone during progress in the floating zone method and the outer peripheral portion of the coarsened region has fine monocrystalline grains. From the polycrystalline silicon rod, the monocrystalline silicon rod for a semiconductor is prepared with a high yield by the single floating zone method.

1. Field of the Invention
This invention relates to a polycrystalline silicon rod for preparing a monocrystalline silicon rod (or a single crystalline silicon rod) by a floating zone melting method (or a floating zone method) and a process for making the polycrystalline silicon rod, and particularly to the same for preparing the monocrystalline silicon rod for a semiconductor by the single floating zone method and the process for making the same.
2. Description of the Prior Art
The floating zone method has been developed by paying attention to properties of silicon that its density is relatively low and its surface tension is high, wherein a molten portion of silicon is lain between an unmelted portion of the polycrystalline silicon rod and a solidified portion thereof, a part of the molten portion is kept in a floating state (such molten portion is hereinafter referred to as a floating molten zone) and monocrystalline silicon is grown from a melt which is obtained by melting the polycrystalline silicon rod, without being brought into contact with a container to support the melt and any other materials.
In a vertical floating zone method, for example, Japanese Patent Publication No. 56-39048 describes that, with respect to a polycrystalline silicon rod with a seed crystal of monocrystalline silicon being attached to the lower end and which is vertically held, a boundary surface between the seed crystal and the polycrystal line rod is heated and molten by high frequency induction heating, electron beam heating, radiation heating or the like to form the floating molten zone and the thus molten portion is crystallized and the single crystal is grown, while gradually moving the above seed crystal portion downward with rotating and enlarging the size of said floating molten zone.
However, in the case of preparing the monocrystalline silicon rod from the polycrystalline silicon rod by the above floating zone method, the crystallization according to single passage of the floating molten zone does not result in satisfactory monocrystallization, and therefore the monocrystalline silicon rod is prepared through crystallization of the polycrystalline silicon rod in which at least two passages of the floating molten zone are carried out, in said first passage the polycrystalline silicon bar being in part monocrystallized.
Preparation of the single crystal by carrying out the at least two passages of the floating molten zone as mentioned above becomes a problem awaiting solution because much labor and time are necessary.

Polycrystalline silicon rod for floating zone method and process for making the same


In a suspension spring adjusting apparatus of a hydraulic shock absorber, a mounting mating surface sealed by a spring adjusting case and a seal material of a case cover is formed in a flat surface shape, and an outer peripheral edge of the case cover is provided with a skirt portion covering over an outer peripheral surface of the spring adjusting case via a gap.

1. Field of the Invention
The present invention relates to a suspension spring adjusting apparatus of a hydraulic shock absorber.
2. Description of the Related Art
Conventionally, as a suspension spring adjusting apparatus of a hydraulic shock absorber, there is a structure in which a piston rod is inserted to a cylinder, a spring adjusting jack is provided in an outer periphery of the cylinder, a jack chamber is provided in a spring adjusting case in which the spring adjusting jack is fixed to an outer periphery of the cylinder, a plunger is provided in the jack chamber. A pump supplying a hydraulic pressure to the jack chamber is installed in the spring adjusting case, a motor driving the pump is provided in the spring adjusting case, the motor is covered by a case cover attached to the spring adjusting case, and a suspension spring is interposed between a spring receiver supported to the plunger of the spring adjusting jack and a spring receiver provided in a piston rod side.
Alternatively, Japanese Utility Model Publication No. 63-19204 (patent document 1), discloses a structure wherein a vehicle body side is provided with a driving means (a motor or the like) for adjusting a damping force of a hydraulic shock absorber, and a mounting mating surface between the vehicle body and a cover (a seal cap) is sealed by a seal ring, at a time of covering the driving means for adjusting the damping force by the cover attached to the vehicle body side.
In the suspension spring adjusting apparatus of the hydraulic shock absorber, in the case that the structure described in the patent document 1 is employed as the seal structure between the spring adjusting case and the case cover, a high-pressure washing water of a high-pressure car wash or the like is directly brought into contact with an outer edge of the mounting mating surface between the spring adjusting case and the case cover, and the load of the direct intruding water against the seal ring becomes excessive.
There can be considered a structure which prevents the high-pressure washing water from being directly brought into contact with the outer edge of the mounting mating surface between the spring adjusting case and the case cover, by faucet joining an annular protruding portion provided in an outer peripheral side of the case cover to a portion around an annular step portion provided in an outer peripheral surface of the spring adjusting case. In this case, the annular step portion and the annular protruding portion are worked respectively in the spring adjusting case and the case cover, and a fixed working precision is necessary for the faucet joint.
In this case, in the conventional suspension spring adjusting apparatus of the hydraulic shock absorber, it is necessary that the mounting boss is provided in a rising manner in the spring adjusting case, and the end surface forming the motor mounting seat surface of the mounting boss is worked in a flat shape, as the mounting structure of the motor to the spring adjusting case.

Suspension spring adjusting apparatus of hydraulic shock absorber


Techniques for parallel processing of events within multiple event contexts include dynamically binding an event context to an execution context in response to receiving an event by storing arriving events into a global event queue and storing events from the global event queue in per-execution context event queues are described. The techniques associate event queues with the execution contexts to temporarily store the events for a duration of the binding and thus dynamically bind the events received on a per-event basis in the context queues.

A network processor application processes packets from a large number of flows (in a connectionless network) or connections (in a connection oriented network). While, packets generally arrive over a physical interface in the order in which they were transmitted, the network processor application cannot make any assumptions about the order in which it will receive the packets.

Method for parallel processing of events within multiple event contexts maintaining ordered mutual exclusion


Non-peptide GnRH agents capable of inhibiting the effect of gonadotropin-releasing hormone are described. Such compounds and their pharmaceutically acceptable salts, multimers, prodrugs, and active metabolites are suitable for treating mammalian reproductive disorders and steroid hormone-dependent tumors as well as for regulating fertility, where suppression of gonadotropin release is indicated. Methods for synthesizing the compounds and intermediates useful in their preparation are also described.

Gonadotropin-Releasing Hormone (GnRH), also known as luteinizing hormone-releasing hormone (LH-RH), plays a central role in the biology of reproduction. A large variety of analogs have been used for an increasing number of clinical indications. The GnRH decapeptide (pyro-Glu-His-Trp-Ser-Tyr-Gly-Leu-Arg-Pro-Gly-NH2 or p-EHWSYGLRPG-NH2) is produced in neurons of the medial basal hypothalamus from a larger precursor by enzymatic processing. The decapeptide is released in a pulsatile manner into the pituitary portal circulation system where GnRH interacts with high-affinity receptors (7-Transmembrane G-Protein Coupled Receptors) in the anterior pituitary gland located at the base of the brain. In the pituitary, GnRH triggers the release of two gonadotropic hormones (gonadotropins): luteinizing hormone (LH) and follicle-stimulating hormone (FSH). In testes and ovaries, LH stimulates the production of testosterone and estradiol, respectively. FSH stimulates follicle growth in women and sperm formation in men. When correctly functioning, the pulse-timed release and concentration levels of GnRH are critical for the maintenance of gonadal steroidogenesis and for normal functions of reproduction related to growth and sexual development.
The pituitary response to GnRH varies greatly throughout life. GnRH and the gonadotropins first appear in the fetus at about ten weeks of gestation. The sensitivity to GnRH declines, after a brief rise during the first three months after birth, until the onset of puberty. Before puberty, the FSH response to GnRH is greater than that of LH. Once puberty begins, sensitivity to GnRH increases, and pulsatile LH secretion ensues. Later in puberty and throughout the reproductive years, pulsatile release of GnRH occurs throughout the day, with LH responsiveness being greater than that of FSH. Pulsatile GnRH release results in pulsatile LH and FSH release and hence testosterone and estradiol release from the gonads. After menopause, FSH and LH concentrations rise, and post-menopausal FSH levels are higher than those of LH.
Chronic administration of GnRH agonists and antagonists to animals or to man results in decreased circulating levels of both LH and FSH. GnRH agonists are compounds that mimic endogenous GnRH to stimulate receptors on the pituitary gland, resulting in release of LH and FSH. After a transient rise in gonadal hormone production or "flare" response, chronic administration of GnRH agonists results in a down-regulation of GnRH receptors. GnRH receptor down-regulation and desensitization of the pituitary results in a decrease of circulating levels of LH and FSH. In spite of the symptom-exacerbating hormonal flare experienced, GnRH agonists have been the treatment of choice for sex-steroid-dependent pathophysiologies. For example, GnRH agonists have been used to reduce testosterone production, thereby reducing prostate volume in benign prostatic hyperplasia (BPH) and slowing tumor growth in prostate cancer. These compounds have also been used to treat breast and ovarian cancers.
Recently, GnRH antagonists have become available for clinical evaluation. GnRH antagonists have an immediate effect on the pituitary without the observed flare associated with agonists. Use of GnRH antagonists (usually decapeptides) has been reported in the literature for treatment of breast, ovarian, and prostatic cancers. Other uses of antagonists, like agonists, include endometriosis (including endometriosis with pain), uterine myoma, ovarian and mammary cystic diseases (including polycystic ovarian disease), prostatic hypertrophy, amenorrhea (e.g., secondary amenorrhea), and precocious puberty. These compounds may also be useful in the symptomatic relief of premenstrual syndrome (PMS). Furthermore, antagonists may be useful to regulate the secretion of gonadotropins in male mammals to arrest spermatogenesis (e.g., as male contraceptives), and for treatment of male sex offenders. Importantly, GnRH antagonists (and agonists) have found utility in treatments where a reversible suppression of the pituitary-gonadal axis is desired.
The presence of GnRH receptors on anterior pituitary cells and several tumor cell types offers the opportunity to develop drugs that act upon these receptors to treat both hormone-dependent and hormone-independent cancers.
For over 50 years, androgen deprivation has been the most effective systematic therapy for the treatment of metastatic carcinoma of the prostate. The rationale is simple—the prostate gland requires androgens for proper growth, maintenance, and function. Yet, prostate cancer and benign prostate hyperplasia are common in men and develop in an environment of continuous androgen exposure. Thus, utilizing a GnRH antagonist to interrupt the pituitary-gonadal axis reduces androgen production and results in tumor growth modulation. Furthermore, GnRH antagonists may have a direct effect on tumor growth by blocking receptors on the tumor cells. For those cancer types that respond both to sex hormones and to GnRH directly, antagonists should be effective in slowing tumor growth by two mechanisms. Since GnRH receptors are present on many prostate and breast cancer cells, it has recently been speculated that GnRH antagonists may also be effective in treating non-hormone-dependent tumors. Recent literature examples indicate that GnRH receptors are present on a number of cancer cell lines, including:                Prostate Cancer: GnRH agonists exert both in vitro, and in vivo, a direct inhibitory action on the growth of both androgen-dependent (LNCaP) and androgen-independent (DU 145) human prostatic cancer cell lines. Montagnani et al, Arch. Ital. Urol. Androl. 1997, 69(4), 257-263. GnRH antagonist inhibit the growth of androgen-independent PC-3 prostate cancer in nude mice. Jungwirth et al., Prostate 1997, 32(3), 164-172.        Ovarian Cancer: The demonstration of GnRH receptors in human ovarian cancers provides a rationale for the use of therapeutic approaches based on GnRH analogues in this malignancy. Srkalovic et al., Int. J. Oncol. 1998, 12(3), 489-498.        Breast Cancer: Breast cancer is the most common type of cancer in women over the age of 40 and is the leading cause of cancer-related death in women. Systematic endocrine intervention represents a major treatment option for the management of advanced breast cancer, especially with estrogen-dependent cancers. The genes for gonadotropin-releasing hormone and its receptor are expressed in human breast with fibrocystic disease and cancer. Kottler et al., Int. J. Cancer 1997, 71(4), 595-599.
Heretofore, available GnRH antagonists have primarily been peptide analogs of GnRH. See, e.g., International Publication No. WO 93/03058. Peptide antagonists of peptide hormones are often quite potent; however, the use of peptide antagonists is typically associated with problems because peptides are degraded by physiological enzymes and often poorly distributed within the organism being treated. Thus, they have limited effectiveness as drugs. Consequently, there presently exists a need for non-peptide antagonists of the peptide hormone GnRH.

Non-peptide GNRH agents, methods and intermediates for their preparation


A thing for amusement related to a puzzle or maze which has cylindrical body with a labyrinth's relief. The labyrinths Picture may be changed by revolving and rearranging the cylindrical sections (11). Cylindrical labyrinth has one or more guide-rings (40), (50) for leading guide-element (41), (51) along the chutes (25) from start to finish point. Guide-rings have catch elements (42), (52) for joining each other.

1. Field of the Invention
This invention relates to an amusement device, and more particularly to a labyrinth or maze amusement device.
2. Description of Prior Art
Labyrinths and mazes wherein, the object is to trace an unobstucted pathway from a starting point to a finish point through a maze of obstructions and pathyways are well known, popular forms of amusement.
However, the problem with most of these maze games is that they comprise a fixed maze, which offers little challenge after the player first successfuly clears the labyrinth's pathway from start to finish, i.e., the arrangement of the labyrinth is static. The author of U.S. Pat. No. 3,820,793 suggests changeable patterns for a two-measured labyrinth game. Some authors suggest complicting a labyrinth making it in three-measured subjects.
Moreover, different subjects which may be used for alternate purposes may be combined with each other. So, author of U.S. Pat. No. 5,281,039 sugests a pen with a toy labyrinth incorporated therein. Someone can convert it as a pen for writing and as a toy for fun.


A semiconductor device includes four or more memory cells arranged on a row, the memory cells each including a first pillar-shaped semiconductor layer, a first gate insulating film around the semiconductor layer, a first gate line around the first gate insulating film, a third gate insulating film around an upper portion of the semiconductor layer, a first contact electrode around the third gate insulating film, a second contact electrode connecting upper portions of the semiconductor layer and the first contact electrode, and a magnetic tunnel junction storage element on the second contact electrode, a first source line connecting lower portions of the semiconductor layers to each other, a first bit line extending in a direction perpendicular to a direction of the first gate line and connected to an upper portion of the storage element, and a second source line extending in a direction perpendicular to the first source line.

Field of the Invention
The present invention relates to a semiconductor device and a method for producing a semiconductor device.
Description of the Related Art
In recent years, magnetoresistive random access memories have been developed (refer to, for example, Japanese Unexamined Patent Application Publication No. 2013-93592).
In the typical structure of a spin-transfer torque magnetoresistive random access memory (STT-MRAM) array illustrated in FIG. 6B of Japanese Unexamined Patent Application Publication No. 2013-93592, a source line (SL) is parallel to word lines (WL) and is perpendicular to bit lines (BL). In the case where this structure is formed using planar transistors, as illustrated in FIG. 6B of the publication, one source line is necessary for two memory cells, and one source line is arranged between word lines. This layout increases the area used for a bit-cell array and has large bit-cell dimensions.
A surrounding gate transistor (hereinafter referred to as "SGT") having a structure in which a source, a gate, and a drain are arranged in a direction perpendicular to a substrate and a gate electrode surrounds a pillar-shaped semiconductor layer has been proposed (refer to, for example, Japanese Unexamined Patent Application Publication No. 2004-356314).
With a decrease in the width of a silicon pillar, it becomes more difficult to allow an impurity to be present in the silicon pillar because the density of silicon is 5×1022 atoms/cm3.
In a typical SGT, it has been proposed that an impurity concentration of a channel is set to be a low concentration of 1017 cm−3 or less, and the threshold voltage is determined by changing the work function of a gate material (refer to, for example, Japanese Unexamined Patent Application Publication No. 2004-356314).
It has been disclosed that, in a planar MOS transistor, the sidewall of a lightly doped drain (LDD) region is formed of a polycrystalline silicon having the same conductivity type as a low-concentration layer, surface carriers of the LDD region are induced by the difference in work function, and the impedance of the LDD region can be reduced compared with oxide film sidewall LDD-type MOS transistors (refer to, for example, Japanese Unexamined Patent Application Publication No. 11-297984). It has also been disclosed that the polycrystalline silicon sidewall is electrically insulated from a gate electrode. The drawings of the publication illustrate that the polycrystalline silicon sidewall is insulated from a source and a drain by an interlayer insulating film.

Semiconductor device and method for producing a semiconductor device

Unisantis Electronics Singapore Pte. Ltd.


A cover lay film includes an electromagnetic wave shielding layer formed of a conductive material, a resistor layer having a greater surface resistance than the electromagnetic wave shielding layer, and an insulating resin layer provided between the electromagnetic wave shielding layer and the resistor layer, wherein a plurality of openings penetrating in a thickness direction of the electromagnetic wave shielding layer are provided in the electromagnetic wave shielding layer.

1. Field of the Invention
The present invention relates to a cover lay film having an electromagnetic wave shielding function and a flexible printed wiring board including the same.
Priority is claimed on Japanese Patent Application No. 2012-222118, filed Oct. 4, 2012, the entire content of which is incorporated herein by reference.
2. Description of Related Art
Since an electromagnetic wave noise generated from a flexible printed wiring board, electronic parts or the like may affect other electric circuits or electronic parts and cause a malfunction thereof or the like, it is necessary to shield the electromagnetic wave noise. Therefore, electronic devices or flexible printed wiring boards have been given a wave shielding function.
Further, with the miniaturization and multifunctionalization of electronic devices including a flexible printed wiring board, a space allowed for the flexible printed wiring board becomes smaller. Therefore, thinning and a reduced bending radius are required for the flexible printed wiring board, and functioning without breaking wiring conductors under a severe bending condition is required.
For example, the following flexible printed wiring boards are proposed as flexible printed wiring boards with an electromagnetic wave shielding function.
(1) A flexible printed wiring board in which an undercoat layer, a shielding layer to which a conductive paste containing a metal powder is applied, and an overcoat layer are sequentially provided on a copper foil wiring circuit which is provided on a heat-resistant plastic film surface. A ground pattern of the copper foil wiring circuit and the shielding layer are electrically connected at an appropriate interval by penetrating through the undercoat layer (Japanese Patent Laid-Open Publication No. H2-33999)
(2) A flexible printed wiring board in which an electromagnetic wave shield film including a metal thin film layer and a conductive adhesive layer with a metal filler sequentially provided on one surface of a cover lay film is placed on a base film with an insulating layer insulating a printed circuit except for a part of a ground circuit such that the conductive adhesive layer is adhered to the insulating layer and the part of the ground circuit (Japanese Patent Laid-Open Publication No. 2000-269632)
(3) A flexible printed wiring board with a cover lay film in which an electromagnetic wave shielding layer is provided on one surface of the cover lay film, a resistor layer having a greater area than the electromagnetic wave shielding layer is provided on the other surface, and an electromagnetic wave noise flowing as a high-frequency current in the electromagnetic wave shielding layer flows as an overcurrent from an edge portion of the electromagnetic wave shielding layer to the resistor layer to be heat-dissipated in the resistor layer (Japanese Patent Laid-Open Publication No. 2009-283901).

Cover lay film and flexible printed wiring board


A demagnetizing circuit has a positive characteristic thermistor and a demagnetizing coil connected in series with an alternating current power supply and is so constructed that it is possible to suppress the production of a low-frequency electromagnetic field. After the completion of a demagnetizing operation, the demagnetizing coil and the alternating current power supply can be completely isolated from each other, i.e. both ends of the demagnetizing coil can be electrically cut off from the alternating current power supply, so that it is impossible for residual demagnetizing current from the alternating current power supply to produce a low-frequency electromagnetic field in the demagnetizing coil. Also, preferably, at least one end of the demagnetizing coil is kept at a reference potential by way of a capacitor to dissipate any currents which may be induced in the demagnetizing coil by any influence other than the alternating current power supply.

This invention relates to a demagnetizing circuit, and particularly to a circuit construction of a demagnetizing circuit.
Conventionally, among demagnetizing circuits built into shadow mask type cathode ray tubes of color television receivers and the like, there have been those of the kind disclosed in Japanese Utility Model Publication No. S.52-28112 and Japanese Utility Model Publication No. S.52-28113. These demagnetizing circuits have the kind of circuit construction shown in simplified form in FIG. 7. The conventional demagnetizing circuit shown in FIG. 7 comprises a positive temperature characteristic thermistor (hereinafter called a PTC) 3 and a demagnetizing coil 4 connected in series with an alternating current power supply 2 by way of a power supply switch 1. A thermally actuated changeover switch 5 such as a bimetal switch opened/closed by heat produced by the PTC 3 is connected in parallel with the demagnetizing coil 4.
In a modified version of this circuit construction, the thermally actuated changeover switch 5 is connected in series between the PTC 3 and the demagnetizing coil 4 and a bypass resistor 6 is connected in parallel with the demagnetizing coil 4 as shown in FIG. 8.
In the conventional circuit construction shown in FIG. 7, when the power supply switch 1 is closed, current from the power supply 2 flows through the PTC 3 and the demagnetizing coil 4, demagnetizing a shadow mask plate of a cathode ray tube, and the PTC 3 produces heat. As time passes the resistance of the PTC 3 rapidly rises and the current flowing through the demagnetizing coil 4 falls, and the current flowing through the demagnetizing coil 4 is thereby controlled according to the resistance-temperature characteristic of the PTC 3. Also, heat produced by the PTC 3 is transmitted to the changeover switch 5, which had been open. When the changeover switch 5 is heated by the PTC 3, it consequently closes and as a result current from the power supply 2 flows through the changeover switch 5 and the flow of current through the demagnetizing coil 4 is cut off.
In the modified example shown in FIG. 8, on the other hand, the changeover switch 5, which is connected in series between the PTC 3 and the demagnetizing coil 4 and had been closed, is opened by heat produced by the PTC 3. Current from the power supply 2 consequently flows through the bypass resistor 6 and as a result, as in the example shown in FIG. 7, the current flowing from the power supply 2 to the demagnetizing coil 4 is cut off.
Demagnetizing circuits having the circuit constructions of the conventional examples of FIGS. 7 and 8 have the merits that it is possible to automatically cut off residual demagnetizing current that is still flowing after the demagnetization is complete, and to eliminate both picture shake of a cathode ray tube caused by effects of residual demagnetizing current, and picture disturbance caused by intruding noise from the power supply 2.
However, in recent years, due to their connection with the impediment by the VDT and the like, a strong demand has arisen to suppress low-frequency electromagnetic fields produced by cathode ray tubes, and the demagnetizing coil 4 in the demagnetizing circuit has been seen as one source of such low-frequency electromagnetic fields. However, in demagnetizing circuits having the conventional constructions described above, because one side of the power supply 2 and one side of the demagnetizing coil 4 are connected even after the changeover switch 5 operates, there has been the problem that it has been extremely difficult to suppress the production of a low-frequency electromagnetic field.