Optical imaging of an object utilizes a plurality of amplitude modulated light rays propagating through the object, either sequentially or simultaneously, for detection by a single photodetector. The light rays may propagate geometrically (i.e., directly) or diffusively. Each of the rays is encoded with a different phase to provide sufficient information for decoding the light intensity detected by the photodetector. The rays may be applied simultaneously in an array, in which case different carrier frequencies as well as different phases are applied to the different rays by any of a number of modulators. Alternatively, the rays may be individually applied to the object in a sequence of phase encoded rays. In either case, the single photodetector receives sufficient information to image each of the voxels of interest in the object being imaged. Information may be obtained for different voxels selected for imaging without mechanical scanning.

Numerous techniques and devices are known and available for imaging structures within opaque or turbid objects, such as biological tissue. Various examples of such prior art are provided in my copending U.S. application, Ser. No. 07/722,823, filed Jun. 28, 1991, the contents of which are hereby incorporated by reference.
The copending application describes a method and apparatus for imaging turbid media using optical interference among diffusively propagating, phase encoded, intensity modulated optical carriers, utilizing photons which pass through the medium (such as biological tissue) by the wave diffusion process as opposed to geometrically propagating "prompt" photons. As disclosed therein, a method for imaging an object includes the steps of applying modulated optical rays at a plurality of points along a surface of the object, each of the rays characterized by an amplitude modulated at a respective modulating frequency and by a specific phase. The phases applied to the various rays are provided respective relative phase-shifts which are selected to cause constructive interference among the modulated rays at a predetermined volume element of interest, or voxel.
Thus, the method effectively selects the predetermined voxel for imaging by selecting the relative phase-shifts to be applied to the intensity modulated light rays. In accordance with the method, the modulated rays are diffusively propagated through the object and the intensity and phase of a light ray resulting from the constructive interference at the selected voxel are detected in order to image a characteristic of the voxel.
In order to image a portion of the object which includes a number of voxels, the method of the copending application may include the further steps of repeating the selecting step for a sequence of predetermined voxels, repeating the propagating step to diffusively propagate the modulated rays through the object to the predetermined voxels, and repeating the detecting step to detect rays respectively resulting from a sequence of constructive interferences at the sequence of voxels. For such a process, the selecting step preferably includes the steps of using a signal responsive phase shifting device, such as a zone plate, for applying the relative phase-shifts to the rays. Computer generated signals are applied to the signal responsive phase shift device, thereby providing non-mechanical scanning of the portion of the object to be imaged.
Although the above summarized invention disclosed in my copending application solves a number of problems associated with the prior art, the disclosed method and apparatus provides for imaging of absorption characteristics using interference among diffusively propagating modulated light rays. There accordingly remains a need for method and apparatus capable of imaging attenuation and phase delay characteristics of an object, using a simplified detector structure and not necessarily relying on occurrence of an optical interference at the object.
In that regard, the prior art uses an optical mask which is time encoded to permit various light rays to impinge on specific voxels of an object. After passing through the object, the rays emerge with intensity attenuation and phase change determined by the characteristics of the voxels. The emergent rays are directed to be incident on corresponding photodetectors for imaging thereby. Such a prior art arrangement is illustrated in FIG. 8, wherein a n plurality of intensity modulated light rays r.sub.i are transmitted through corresponding voxels V.sub.i (i=1, 2, 3, . . . , 4) of an object 10 for detection by a photodetector array 13. A mask 11 includes a plurality of opaque and transparent regions in the paths of light rays r.sub.i to transmit or block specific rays to the object and to establish a specific timing sequence of rays for incidence on the object.
Such a mask may be a computer controlled liquid crystal plate, for example, having pixels or pixel groups which are selectively made opaque and transparent according to a predetermined timing sequence. In the Figure there is illustrated a single transparent region 15 in mask 11, the remaining regions being opaque. By having a predetermined time sequencing for the incident rays as well as for reading and processing of outputs of the photo-detectors 13, a processor 16 obtains a distribution of the intensity (amplitude) attenuation and phase shifting characteristics of the various voxels of the object, thus imaging the object.
However, such a prior art approach as shown in FIG. 8 requires a complex sequencing arrangement of the imaging rays, requires a complex photodetecting structure utilizing a number of photo-detectors, and requires passage of time from the application of the first imaging ray to the last such ray, thus effectively prohibiting the system from obtaining a real-time "snapshot" of the voxels of the object.
There is thus a need in the prior art for method and apparatus of using a single detector cell rather than an array of cells for imaging attenuation and phase delay characteristics of one or more elements which are arrayed along a plurality of dimensions of an object, whether the imaging uses a single exposure or a plurality of exposures.
There is yet a more particular need for a method and apparatus for imaging a plurality of voxels of an object of interest, whether disposed as a one-dimensional linear array, as a two-dimensional planar array, or as a three-dimensional volume of the object, by a single exposure of the array of voxels to imaging light including a plurality of phase-encoded, modulated optical carrier frequencies.
There is yet another need in the prior art for imaging one or more voxels of an object by applying one or more rays of light to the voxels, in one or more exposures, using geometrically propagating light rays.

Multidimensional imaging using a single point detector for a phase encoded modulated optical carrier

The United States of America as represented by the Secretary of the Department of Health and Human Services


A method for surface dyeing a range of textile materials, in the form of yarn, fabric, or garments, includes: a) preparing a dyebath including dye particles and an additive, such as an anionic acrylic copolymer, causing the particles to become charged; b) preparing the textile material by applying an additive, such as a cationic polyamide, forming a substrate with a charge attracting the particles, c) immersing the textile material in the dyebath; d) chemically reducing the dye particles retained on the textile material to a leuco form; and e) oxidizing the dye material.

1. Field of the Invention
This invention relates to the dyeing of cotton, flax, hemp, wool, silk, and blends of such materials with synthetic materials, in the form of yarn, fabric, or woven or knitted articles of clothing, in a batch or continuous process.
2. Summary of the Background Art
Vat dyes form a large class of dyes that are applied to textile fibers in chemically reduced leuco forms that are water soluble. Then, an oxidation process is applied to return the leuco forms to insoluble dyes having the desired colors on the surfaces of the fibers or dispersed through the fibers, depending on the materials and process. This large class of dyes can be used to produce a wide variety of colors in textiles.
The most widely used vat dye is Indigo, which has been used to dye cellulose-based textiles, such as cotton, for centuries. Since indigo is practically insoluble in water, ether, alcohol, and dilute acids, conventional dyeing processes include reducing the indigo dye to a soluble leuco form having a yellow-green color, using a suitable reducing agent with an alkaline material. After the fabric material is then exposed to the leuco form in a bath, the fabric material is exposed to air or oxygen so that the reduced dye within the fabric is oxidized, returning to an insoluble form in which the blue color is apparent. Since, even in the leuco form, indigo has a low affinity for textile materials, these steps are repeated as often as needed to obtain the desired shade of blue, with five to seven immersions typically being used, and with each of these immersions being followed by an oxidation process.
Conventional processes for dyeing fabric materials with sulfur dyes also include a step of chemically reducing the dye before it is applied to the material. For example, after being made water soluble by chemical reduction, a sulfur dye is applied within a pad-steam process to be subsequently squeezed off under a defined pressure. Then, the dye is diffused into the fibers during a steaming process. Alternately, in a pad-dry-pad-steam process, the sulfur dye is applied to the fabric in a dispersed or dissolved form and is then squeezed off under a defined pressure. Then, a downstream chemical pad is applied, impregnating the fabric so that dye diffusion into the fibers is achieved by steaming. Either of these processes is followed by rinsing and oxidation of the dye, resulting in through dyeing of the fiber.
In a pad-dry process, a reduced sulfur dye is applied to the fabric to be subsequently squeezed off under a determined pressure. The treated fabric then passes through a pre-dryer having a downstream hot flue, in which the dye material is partially oxidized, and through additional rinsing and oxidation. While the dye material remains at the surface of the fiber, its level of fixation is undesirably low, leading to difficulties in establishing a consistent and reproducible dyeing process.
For both fabric materials dyed with vat dyes, such as indigo, and for fabric materials dyed with sulfur dyes, a significant market exists for materials dyed with a controllable and reliable "surface dyeing" process, in which a layer of dye material is adhered to the surface of the yarn or fabric without substantial penetration within the substrate. Such materials can be mechanically abraded to produced a "stone-washed" appearance, with a portion of the dye material being removed from the surface to reveal an undyed or differently colored core within the fiber. Alternately, such material may be chemically treated, for example with enzymes, to change the color of a part of the outer surface so that a similar appearance is produced.
Commercially successful processes for dyeing cotton fabrics with indigo have been generally limited to continuous processes for dyeing warp yarn to be used in the production of blue jeans and other denim products. Such a continuous process is described, for example, in U.S. Pat. No. 3,457,022 as a process in which the yarn is first dipped in hot dye solutions to achieve maximum penetration of the dye within the yarn, which is then repeatedly dipped in cold dye solutions to obtain the desired color.
Other patents describe the chemical components of the dye bath. For example, U.S. Pat. No. 4,166,717 describes a process in which the indigo is reduced to its soluble leuco form with sodium hydrosulfate and maintained in an aqueous solution with sodium hydroxide. An aldehyde addition product, such as formaldehyde, acetaldehyde, or furfural, is added to the solution, with an adduct, such as a bisulfate or a sulfoxylate.
U.S. Pat. No. 5,935,273 describes a process for the continuous dyeing of yarn containing cellulose in a single passage through an aqueous solution of indigo in its reduced, or leuco, state in a dye liquor additionally containing deoxidants, alkali, and a dissolved alkali metal salt at a concentration of 100 to 200 grams/liter as an electrolyte as a pH value of the liquor is adjusted to about 10.2 to 11.3. As the electrolyte concentration is maintained, the yarn is exposed to a gas that dissolves in the aqueous solution while forming an acid. Suitable gasses are carbon dioxide, hydrogen chloride, formic acid vapor, and acetic acid, with carbon dioxide being preferred, with the use of carbon dioxide to establish maintain and control pH in dyeing processes being further discussed in U.S. Pat. No. 5,295,998, and with the use of carbon dioxide to effect an accelerated neutralization of cellulose textile substrates being additionally discussed in U.S. Pat. No. 4,536,907. Then the reduced indigo in the yarn is oxidized to form a pigment, with the dyeing process.
The conventional process includes labor-intensive steps associated with the handling of the yarn, such as warp beam make-up and yarn quilling. To eliminate such steps, what is needed is a method for dyeing garments instead of the yarn used in their production. Additionally, dying garments provides for effective inventory control, and for the color coordination of garments containing different types of yarns or knitted and woven materials.
U.S. Pat. No. 4,845,789 describes a process for the rapid dyeing of a series of successive garments or batches of garments with a vat dye, preferably indigo dye. While the garments are being constrained, they are submerged in, and impregnated with, a dyeing solution in a first bath. Then, they are removed from the first bath and held with the draining from them to be conserved for reuse. Next, the garments are promptly immersed in an oxidizing solution in a second bath to shock oxidize the dye present in the garments, which are then removed from the oxidizing bath while draining the oxidizing solution and preserving it for reuse. The garments are then washed and dried. The time between removal of the garments from the dyeing solution and their placement in the oxidizing solution is less than five minutes.
U.S. Pat. No. 4,756,037 describes a process for dyeing with a vat dye, such as an indigo dye solution, a series of successive garments made with fabric containing cellulose. The garments are supported on supports that keep all fabric surfaces of each garment accessible to treating solutions, so that the materials are uniformly impregnated with a dye solution at a first bath. The garments are then inserted in an oxidizing solution within a second bath to uniformly oxidize the dye present within each garment.
U.S. Pat. App. Pub. No. 2005/0097685 A1 describes a process for producing a reproducible ring dye using sulfur dyes on fabrics containing textile fibers and on blended fabrics containing textile fibers. The process comprises, following the application of a sulfur dye vat to the fabric, a step in which the dye is fixed and incipiently oxidized at a temperature of 80 to 160 degrees C., and preferably between 120 and 130 degrees C., and at a moisture content of 5 to 50 percent, and preferably between 20 and 30 percent.
U.S. Pat. No. 4,131,423 describes a process for dyeing fibers using a water-insoluble dye, such as a sulfur dye. The process comprises reductive dissolution and oxidative fixing using an oxyhalogen acid as an oxidizing agent.
U.S. Pat. No. 4,322,214 describes a process for dyeing textile materials, such as fiber and cloth more satisfactorily with sulfur dyes or sulfurized vat dyes, with an organic mercapto compound and/or an organic sulfur compound capable of generating mercapto groups under dyeing conditions being present in dye baths. Still more improved dyeing results may be obtained by allowing a sulfite salt compound to be further present in such dye baths.
The patent art additionally describes a number of other methods for treating textile material and blends including cellulose to improve dyeability. For example, a method for producing anionically dyeable smooth dry crosslinked cellulose is described in U.S. Pat. No. 5,298,584, with a cellulose-containing material being modified with a combination of a hydroxyalkylamine or a hydroxyalkyl quaternary ammonium salt, one or more glycols, and a crosslinking agent. The reaction is typically catalyzed with salts such as zinc nitrate or magnesium chloride, used either alone or in conjunction with citric acid. Types of usable anionic dyes include acid, direct, and reactive dyes. The cellulose-containing material may be in the form of fibers, yarns, slivers, and paper. U.S. Pat. No. 5,139,530 describes the production of anionically dyeable smooth-dry crosslinked textile materials by treatment of methylolamide crosslinked textile materials with an alkali swelling agent such as sodium hydroxide before dyeing. U.S. Pat. No. 3,576,589 describes a method for dyeing a fabric, such as a polyester/cotton fiber, in a vat/disperse dye system, using hydroxylamine sulfate under conditions of thermal fixation. The hydroxylamine sulfate is maintained at a pH in the range 5.0 to 6.5 in a vat/disperse dye pad to obtain maximum penetration of the dye within the fibers of the fabric. U.S. Pat. No. 4,767,421 describes a method of manufacturing a homogeneous water-insoluble dye layer on a substrate, with a solution of a cationic or anionic dye in an organic solvent being provided on the substrate, with the solvent being removed, and with the resulting dye layer being treated with am aqueous solution of a salt. The cation of the anionic dye is exchanged for the cation of the salt. Alternately, during treatment with an aqueous solution of a salt or acid, the anion of the cationic dye is exchanged for the salt or acid.
U.S. Pat. No. 5,647,875 describes a method for producing a desired color shade by treating a dyed textile substrate, which has an initial color shade, partly due to color caused by the presence thereon of a vat dye and partly due to color caused by the presence thereon of a sulfur dye, with a chlorine-free decolorizing agent, such as hydrogen peroxide, in an aqueous alkaline medium. The color shade is modified by removing a portion of the color attributable to the sulfur dye within removing as large a proportion of the color attributable to the vat dye.
What is needed is a method for dyeing fabrics and garments formed from fibers including cellulosics, wool, and silk with a vat dye, such as indigo, as well as for dyeing the yarn used to make such fabrics and garments. Additionally, what is needed is a method for dyeing cellulosics, wool, and silk without relying on multiple dips to get a suitable shade. Furthermore, what is needed is a method allowing the use of batch processes, such as pad-jig dyeing and dyeing within a rotary dyeing machine to dye textile materials with indigo. Additionally, what is needed is a controllable method for reliably and consistently ring dyeing various substrates with vat and sulfur dyes, so that a satisfactory level of adhesion of the dye is consistently achieved at the surface of the fibers.

This patent is subject to a terminal disclaimer.

Method for dyeing fabric materials with indigo, other vat dyes, and sulfur dyes


To erect metal utility poles, a plurality of tubular sections of utility poles are fabricated, each having tapered portions and the diameter of one being slightly larger than the diameter of another. The sections are brought to a site for erection and pulled together with short repeated strokes of a hydraulic cylinder attached to one section with its piston rod connected to another section of utility pole. In one embodiment it is not necessary to manually adjust the mechanism pulling the sections of utility poles together and in another embodiment, a light flexible cord is attached to one section and a hydraulic cylinder to another section. The hydraulic cylinder pulls the cord and when the piston rod is extended for the next retraction, the cord length is adjusted.

1. Technical Field
This invention relates to the assembly and erection of utility poles.
2. Description of the Prior Art
Metal utility poles generally are tubular and may take any general tubular shape but are usually cylindrical or octagonal. They are usually fabricated in sections for efficiency in the fabrication process and ease of transportation. After the sections are fabricated, they are attached one to the other for a longer pole. Some such poles have been attached at the utility pole fabricators and then the assembled poles transported to the utility for erection. However, this has the disadvantage of requiring the shipping of over-length utility poles and of handling very heavy utility poles. Consequently, some utility poles are shipped in sections to the site, assembled and erected. For ease in assembly, the sections of a utility pole are tapered and the upper sections are inserted into the bottom sections with sufficient force so that they do not come apart when being erected since if the bottom section dropped out when the pole is being pulled vertically it could result in injury to the personnel as well as damage. Accordingly, the sections must be pulled together with considerable force under standards that are set by the manufacturer to ensure they will not come apart.
In one technique for pulling the utility pole sections together, hydraulic cylinders are attached on opposite sides of a first section of utility pole and corresponding brackets are attached to a second section that is dimensioned to fit into the first section. The hydraulic cylinders and tug brackets are bolted to the sections of utility pole, using nuts provided by the manufacturer. The first and second sections contain a taper selected by pole fabricator to provide a fit that becomes increasing tight as the sections are pulled together. The manufacturer selects the taper and publishes the relationship between force needed to compress the two sections together and the distance the upper section is telescoped over the lower section. A tug arm connects the piston rods of the hydraulic cylinders with the corresponding brackets. The tug arm is pulled by the hydraulic cylinders to pull the poles together in an assembly operation and pushed by the hydraulic cylinders to disassemble sections.
One prior art type of hydraulic cylinder has a stroke sufficiently large to pull the sections together with sufficient force for fastening. Other prior art hydraulic cylinders have shorter strokes. However, the prior art arrangements utilizing relatively short stroke hydraulic cylinders use a heavy steel ladder-typed member to connect the hydraulic piston on one section to the bracket on the other. The sections are pulled together in increments and between increments, the steel ladders are manually adjusted to a new location on the bracket so that the sections can be pulled another increment.
This prior art arrangement has several disadvantages, such as for example: (1) it is heavy and difficult to move; (2) it requires a time consuming and difficult operation in adjusting the position of the ladder-type bracket; and (3) it is relatively expensive.
Accordingly, it is an object of the invention to provide a novel apparatus and method for erecting metal utility poles.
It is further object of the invention to provide a novel apparatus and method for assembling the sections of a utility pole.
It is a still further object of the invention to provide a novel method of assembling and erecting utility poles that is less expensive and less time consuming than prior art systems.
It is a still further object of the invention to provide economical equipment for assembling sections of a utility pole.
It is still further object of the invention to provide equipment which is relatively light and easier to transport than prior art equipment for assembling the sections of utility poles.
It is a still further object of the invention to provide equipment that cooperates with existing equipment normally at a utility pole erection site to assembly utility poles.

Utility pole assembly method and apparatus


Provided is a method and system for audio privacy that includes receiving a first sound signal at a microphone proximal to a user's ear, generating a second sound signal based on the first sound signal and a stored filter, the second sound signal interfering with the first sound signal, and emitting the second sound signal from a speaker proximal to the user's ear.

During a telephone call, a telephone user uses a telephone to communicate with other users, oftentimes in an open or noisy environment, such as inside a cubicle, a kitchen, a coffee house, a conference room, a shopping mall, an airport, a library or a lobby. A telephone call may be a two-party or a multiple-party call.
A telephone call may be used for personal communication, such as two friends engaging in a conversation, a daughter talking to her grandpa, a nephew asking his aunt for a secret recipe, a newly wedded couple inviting their parents for a Thanksgiving gathering, a customer enquiring a business for business hours and direction, a guest making a dinner reservation with a restaurant, or a subscriber making an request with a cable company for the repair of her cable connection.
For personal communication, depending on the information being exchanged during the call, it may be desirable to protect the privacy of the telephone users so that the information exchanged is not intelligible to unintended audience.
A telephone call may also be used for business or in business-to-business communication, such as a contractor talking to a city manager about a bid for a project, a client ordering goods from a supplier, an insurance adjustor taking damage assessment from a hurricane stricken home owner, a nurse discussing a medical condition with a patient, a stock broker giving financial advice to a client, a lawyer speaking to a client on sensitive legal strategy, a product distributor asking an equipment vendor for technical information, a health clinic nurse delivering a appointment confirmation to a patient, or a credit card company representative alerting a customer of unusual activity on a credit card account.
A telephone call may also be used for collaboration within a business, such as a traveling salesman asking for updated pricing information from her peer, a customer service manager requesting product integration information from a project manager, two engineers discussing an application programming interface, a emergency room nurse seeking critical advice from a doctor, or several executives engaging in a conference call on company financial matters.
For business communication, the information being exchanged may be critical to the operation of the business or businesses involved. It therefore may be essential to protect the privacy of the telephone users so that the information exchanged is not intelligible to unintended audience.
The importance of protecting the privacy for business communication becomes increasingly important with the escalating cost of travel, the proliferation of service outsourcing, and international business partnership as a result of globalization.
The above examples demonstrate a need to provide audio privacy for a user during a telephone call.


The invention relates generally to a method and an arrangement for transferring information in a packet radio service. The invention further concerns the technology of transferring control information relating to packet data transfer resources on individual packet-switched radio connections at the interface between a transmitting device and a receiving device. It s an objective of this invention to provide a method and a system that offers solutions to the prior art problems. Especially, it is an object of this invention to provide a solution for signalling, which enables the use of more than one connection (TBF) and time slot for packet data transfer in one data transfer direction, and the use of asymmetric resources for uplink/downlink data transfer. The objectives of the invention are fulfilled by providing a procedure, in which the one and same uplink control channel is used for transferring uplink control information, which relates to at least two downlink TBFs. This is preferably achieved by including in the uplink control message information on which downlink time slot the concerned TBF is transferred, assuming the uplink control channel uses an uplink timeslot of which the peer downlink timeslot (i.e. with same timeslot number) is not used by the concerned TBF. It is also preferably achieved by including in a downlink control message information on which uplink time slot control information is transferred corresponding to a determined TBF.

The denomination "mobile telecommunications system" refers generally to any telecommunications system, which enables a wireless communication connection between a mobile station (MS) and the fixed parts of the system when the user of the mobile station is located within the service area of the system. A typical mobile communications system is a Public Land Mobile Network (PLMN). The majority of mobile telecommunications systems in use at the time of the filing of this patent application belong to the second generation of such systems, a well-known example being the GSM system (Global System for Mobile telecommunications). However, the invention also applies to the next or third generation of mobile telecommunications systems, such as a system known as the UMTS (Universal Mobile Telecommunications System).
Multi-user radio communication systems must have well-defined procedures for allocating radio resources (time, frequency) to individual radio connections. In this patent application we will consider especially packet-switched radio connections in cellular radio systems where each cell comprises a base station, which is arranged to communicate with a multitude of mobile stations. As an example we will discuss the well-known GPRS system (General Packet Radio Service), the known resource allocation procedures of which are laid down in the technical specification number GSM 04.60 published by ETSI (European Telecommunications Standards Institute) [1].
Packet switched wireless networks, such as GPRS (General Packet Radio Service), are designed to provide data services, e.g. Internet services, cost-effectively. In GPRS the channels are not dedicated to one user continuously but are shared between multiple users. This facilitates efficient data multiplexing. However, different kinds of data services have different requirements for the data connection. For example, Internet real time services have gained popularity during the past few years; IP (Internet Protocol) telephony and different streaming applications are already common in the Internet. These services have different requirements for the data connection compared to, for example, transferring facsimiles or email messages. Therefore the connection for the data transfer is usually established according to the service requirements, such as the Quality of Service (QoS) requirement. However, the use of many kinds of services during the same session then requires the use of several connections or "temporary block flows", each being dedicated to a certain type of service.
In order to better understand the problems of the prior art solutions and the idea of the present invention, the structure of a prior art digital cellular radio system is next described in short, and GPRS is then described in more detail by briefly describing some parts of said specification [1].
FIG. 1a shows a version of a prior known GSM cellular radio system. The terminals MS are connected to the radio access network RAN which includes the base stations and the base station controllers/radio network controllers RNC. The core network CN of a cellular radio system comprises mobile services switching centres (MSC) and related transmission systems. If the system supports GPRS services, the core network also comprises Serving GPRS Support Nodes (SGSN) and Gateway GPRS Support nodes (GGSN). According e.g. to the GSM phase 2+ specifications developed from GSM the core network may provide new services such as GPRS. The new types of radio access networks can co-operate with different types of fixed core networks CN and especially with the GPRS network of the GSM system.
FIG. 1b shows architecture of a general packet radio service (GPRS). The GPRS is a new service that is currently based on the GSM system but it is supposed to be generic in the future. GPRS is one of the objects of the standardisation work of the GSM phase 2+ and UMTS at the 3GPP (3rd Generation Partnership Project). The GPRS operational environment comprises one or more subnetwork service areas, which are interconnected by a GPRS backbone network. A subnetwork comprises a number of packet data service nodes (SN), which in this application will be referred to as serving GPRS support nodes (SGSN) 153, each of which is connected to the mobile telecommunications system (typically to a base station through an interworking unit) in such a way that it can provide a packet service for mobile data terminals 151 via several base stations 152, i.e. cells. The intermediate mobile communication network provides packet-switched data transmission between a support node and mobile data terminals 151. Different subnetworks are in turn connected to an external data network, e.g. to a Public Data Network (PDN) 155, via GPRS gateway support nodes GGSN 154. The GPRS service thus allows the provision of packet data transmission between mobile data terminals and external data networks when the appropriate parts of a mobile telecommunications system function as an access network.
In order to access the GPRS services, a mobile station shall first make its presence known to the network by performing a GPRS attachment. This operation establishes a logical link between the mobile station and the SGSN, and makes the mobile station available for SMS (Short Message Services) 158, 159, over GPRS, paging via SGSN, and notification of incoming GPRS data. More particularly, when the mobile station attaches to the GPRS network, i.e. in a GPRS attachment procedure, the SGSN creates a mobility management context (MM context). Also the authentication of the user is carried out by the SGSN in the GPRS attachment procedure. In order to send and receive GPRS data, the MS shall activate the packet data address, which is to be used, by requesting a PDP activation procedure (Packet Data Protocol). This operation makes the mobile station known in the corresponding GGSN, and interworking with external data networks can commence. More particularly, a PDP context is created in the mobile station and the GGSN and the SGSN. The packet data protocol context defines different data transmission parameters, such as the PDP type (e.g. X.25 or IP), the PDP address (e.g. X.121 address), the quality of service (QoS) and the NSAPI (Network Service Access Point Identifier). The MS activates the PDP context with a specific message, Activate PDP Context Request, in which it gives information on the TLLI, the PDP type, the PDP address, the required QoS and the NSAPI, and optionally the access point name (APN).
FIG. 1b also shows the following GSM functional blocks: Mobile Switching Center (MSC)/Visitor Location Register (VLR) 160, Home Location Register (HLR) 157 and Equipment Identity Register (EIR) 161. The GPRS system is usually also connected to other Public Land Mobile Networks (PLMN) 156.
Functions applying digital data transmission protocols are usually described as a stack according to the OSI (Open Systems Interface) model, where the tasks of the various layers of the stack, as well as data transmission between the layers, are exactly defined. In the GSM system phase 2+, which in this patent application is observed as an example of a digital wireless data transmission system, there are five operational layers defined.
Relations between the protocol layers are illustrated in FIG. 2. The lowest protocol layer between the mobile station MS and the base station subsystem is the layer 1 (L1) 200, 201, which corresponds to a physical radio connection. Above it, there is located an entity corresponding to the layers 2 and 3 of a regular OSI model, wherein the lowest layer is a radio link control/media access control (RLC/MAC) layer 202, 203; on top of it a PDCP layer 204, 205; and topmost a radio resource control (RRC) layer 206, 207. Between the base station subsystem GERAN BSS of the generic radio access network and an interworking unit/core network IWU/CN located in the core network, there is assumed to be applied a so-called Iu interface, where the layers corresponding to the above described layers from L1 to PDCP are the layers L1 and L2 of the OSI model (blocks 208 and 209 in the drawing), and the layer corresponding to the above described RRC layer is the layer L3 of the OSI model (blocks 210 and 211 in the drawing).
The mobile station MS must include a higher-level control protocol 212 and a protocol 213 for serving higher-level applications, of which the former communicates with the RRC layer 206 in order to realise control functions connected to data transmission connections, and the latter communicates directly with the PDCP layer 204 in order to transmit such data that directly serves the user (for instance digitally encoded speech). In a mobile station of the GSM system, the blocks 212 and 213 are included in the above-mentioned MM layer.
In GPRS, a Temporary Block Flow (TBF) is created for transferring data packets on a packet data channel. The TBF is a physical connection used by two mutually communicating Radio Resource (RR) peer entities to support the unidirectional transfer of PDCP Packet Data Units (PDU) from upper PDCP layers on physical channels for packet data. We will consider separately uplink TBFs (transfer of data from the mobile station to the base station) and downlink TBFs (transfer of data from the base station to the mobile station).
During an uplink TBF the mobile station will organise the data to be transferred into Protocol Data Units or PDUs. These are in turn divided into smaller parts which are distributed into data blocks on the RLC layer which defines the procedures related to information transfer over the radio interface. Each RLC data block will have a corresponding identification number as well as a multitude of associated fields containing information that relates to the contents and significance of the RLC data block. During a downlink TBF a similar arrangement of successive RLC data blocks is produced by the network and transmitted to the mobile station.
The TBF is thus established using a determined set of parameters for the data transfer, such as acknowledged/unacknowledged RLC mode, radio priority etc. If the mobile station with an existing TBF needs to transfer upper layer (or PDCP) PDUs with a different RLC mode the existing TBF is released and the new TBF is established for the new RLC mode. This means that the mobile station must request a completely new allocation of radio resources by first transmitting a request message on an access channel (PRACH or RACH; Packet Random Access Channel or Random Access Channel depending on whether or not the first one of these is available). The network will either grant or reject the request by sending a corresponding message on an access grant channel (PAGCH or AGCH; Packet Access Grant Channel or Access Grant Channel, same considerations of availability apply).
In downlink, to change RLC modes the network must allow for the termination timer in the mobile station to expire for terminating the existing TBF allocation, and establish a completely new TBF by sending a Packet Downlink Assignment message on a PCCCH or CCCH (Packet Common Control Channel or Common Control Channel depending on availability).
In the prior art systems it has not been possible to transfer simultaneously PDCP PDUs using different RLC modes, different radio priorities or different throughput classes. This is a difficult limitation, because in a GPRS system a mobile station may support different types of services and therefore there may also exist a need to transfer PDCP PDUs with different parameters simultaneously. Especially, if one of the supported services is a real time service, the delay caused by releasing the existing TBF and the establishment of new TBF to support the service could be unacceptable.
Higher bit rates are one of the most important targets in the standardisation of new packet data services. The flexibility of services and the simplicity of the terminals are other important objectives. In order to achieve higher bit rates the terminals may use several timeslots. This multi slot capability means that the mobile station is able to transmit more than one channel and/or receive more than one channel within the TDMA frame. Most service scenarios are asymmetric in nature and traffic in downlink is usually seen to be higher than in the uplink direction. Therefore traffic scenarios like 3+1 are introduced meaning that 3 timeslots are used in downlink direction and one timeslot is used in uplink direction. Current GPRS specification supports at most one connection TBF (Temporary Block Flow)) in each direction (Uplink, Downlink) regardless how many timeslots are allocated. However, in document WO 00/54464 [2] there is disclosed a method, wherein at least two TBFs can be used in one data transfer direction.
The connection is identified with the same identifier in every TDMA timeslot PDCH (Packet Data CHannel) used for the connection. This identifier is called TFI (Temporary Flow Identifier) in GPRS. This TFI is unique on all PDCH's used for the TBF. In the future when packet data services are widely used, having at most one connection per direction is an unnecessary limitation and therefore several simultaneuous connections in the same direction will be supported which are identified using different or same temporary block flow identifiers (TFI). This is commonly referred to as multiple TBFs. However these scenarios have not addressed any applicable solution for how control signalling is done assuming the multislot classes specified at the present.
In the following PACCH (Packet Associated Control CHannel) occurence when a TBF is established is described, depending on the different allocation mechanisms for the data in uplink direction, [1]. In this text, PACCH/U means uplink part of a PACCH, PDCH/D means downlink PDCH and PDCH/U means uplink PDCH.
In case of downlink TBF only, the RRBP field is used to reserve PACCH/U. The RRBP value specifies a single uplink block in which the mobile station shall transmit either a PACKET CONTROL ACKNOWLEDGEMENT message or a PACCH block to the network. When received a given DL PDCH, the RRBP refers to the same uplink PDCH.
Dynamic Allocation
The mobile station shall attempt to decode every downlink RLC/MAC block on all assigned PDCHs. Whenever the mobile station receives an RLC/MAC block containing an RLC/MAC control block, the mobile station shall attempt to interpret the message contained therein. If the message addresses the mobile station, the mobile station shall act on the message.
Whenever the mobile station detects an assigned USF value on any assigned PDCH, the mobile station may transmit a PACCH block on the same PDCH in the next block period. The mobile station shall not transmit an RLC data block in any uplink radio block allocated via the polling mechanism.
Extended Dynamic Allocation
The mobile station shall attempt to decode every downlink RLC/MAC block on all monitored PDCHs. Whenever the mobile station receives an RLC/MAC block containing an RLC/MAC control block, the mobile station shall attempt to interpret the message contained therein. If the message addresses the mobile station, the mobile station shall act on the message.
The network shall transmit all PACCH messages on the PDCH carried on the lowest numbered timeslot in the allocation.
Whenever the mobile station detects an assigned USF value on any assigned PDCH, the mobile station may transmit a PACCH block on the same PDCH in the next block period. The mobile station shall not transmit an RLC data block in any uplink radio block allocated via the polling mechanism.
Fixed Allocation Uplink
A multislot class type 1 mobile station shall monitor a radio block on an assigned PDCH for downlink a PACCH block, according to its multislot capabilities:                if the radio block is not assigned as part of a measurement gap; and        the uplink is not allocated during the radio block; and            the uplink of the TID, timeslot(s) immediately after the radio block is not allocated [3]; and    if the mobile, is multislot class 1 through 12, the uplink of the Tra timeslot(s) immediately before the radio block is not allocated, [3].    if the mobile is multislot class 19 through 29, the uplink of the Trb timeslot(s) immediately before the radio block is not allocated, [3].
The network shall leave such sets of gaps in the uplink fixed allocation for the purpose of transmission of the downlink PACCH.
A mobile station shall monitor one PDCH in the allocation for downlink PACCH except during the measurement gap. The network shall indicate that PDCH on uplink resource assignment (DOWNLINK_CONTROL_TIMESLOT parameter) according to MS multi slot class. DOWNLINK_CONTROL_TIMESLOT parameter shall always indicate a timeslot number, which is used for TBF uplink.
A Multi slot Class type 2 mobile station shall monitor all assigned PDCHs for PACCH, unless the mobile station also has current downlink TBF, in which case PDCH assigned for the downlink TBF shall take precedence.
After the fixed allocation is exhausted, the mobile station shall continue to monitor all assigned PDCH(s) that it is able to monitor according to its multi slot class.
In the case of simultaneous uplink and downlink TBFs, the mobile station shall monitor all assigned downlink PDCHs and any uplink PDCHs it is able to monitor.
The mobile station may transmit a PACCH block on any uplink radio block allocated via the ALLOCATION_BITMAP.
In the case of simultaneous uplink and downlink TBFs, the mobile station shall not transmit an RLC data block, in any uplink radio block allocated via the polling mechanism [1] (subclause 10.4.4).
The problem of uplink controlling is next described in more detail referring to FIG. 3. FIG. 3 shows a downlink TDMA frame 301 and an uplink TDMA frame 302, which both have 8 time slots TN0 . . . TN7. FIG. 3 depicts a multi slot, class 4 MS i.e. 3 time slots in downlink and 1 time slot in uplink. There are two parallel connections active in the downlink data transfer using uplink time slots TN1, TN2 and TN3, 310. The temporary block flow TBF-A is transferred on time slots TN1 and TN2, and a temporary block flow TBF-B is transferred on the time slot TN3. In the uplink direction there is one connection TBF-U, which is allocated on uplink TN2, 322. If the connections use acknowledged model RLC then RLC blocks from all the TBFs have to be acknowledged on the same uplink channel PACCH/U (Packet Assosciated Control CHannel/Uplink) on time slot 322, due to the multislot class constraints.
An uplink control channel is used, for example, for transferring acknowledgement messages, which inform whether the downlink data transfer of a determined TBF has been successful. Packet downlink ack/nack message has an information element "Global TFI" that identifies the temporary block flow to which acknowledgement is related. If the network has allocated the same TFI values for two connections, e.g. TFI-A and TFI-B have the same value, then downlink TBF cannot be unambiguously identified in Packet downlink ack/nack message. RRBP (Relative Reserved Block Period) cannot be used as such for TBFs, because e.g. in the previous example, it could reserve blocks on TN1 or TN3, which would not be allowed.

Advanced method and arrangement for transferring information in a packet radio service


A modular game call system comprising generally a mouthpiece assembly, a tubular portion, and a resonance producing end. The mouthpiece assembly can be completely removed from the call to enable the tubular section and resonance producing end piece to be used separately with any other type of call. The mouthpiece assembly comprises a detachable snap-on diaphragm that insures accurate, consistent tension of the membrane to allow high quality tones to be produced. Alternatively, a sheet of membrane material can be attached to the end of the mouthpiece assembly to create high quality tones. The resonance producing end piece allows the call to produce a resonant sound highly similar to a bugling bull elk.

Numerous devices have been developed over the years to imitate the sounds of wild animals, particularly game animals. Many efforts have been attempted to simplify and improve the quality of the sounds produced by game calls. Many game calls, particularly elk and turkey calls, require extensive practice before they are mastered. Some users simply cannot master the calls even after hours of practice.
Several problems have recently surfaced with respect to the effectiveness of traditional game calls. Due to the increased popularity of hunting and the perceived effectiveness of using game calls, more hunters are taking the field each year using a plethora of different types of game calls. Accordingly, game animals are becoming increasingly discriminating and wary of many traditional calls. Unless the call is capable of imitating with a high degree of precision actual sounds of the game animal, it will likely be ineffective. Many calls on the market today fail to replicate with enough precision the actual sounds made by the game animal and thus serve primarily to frustrate the hunter. These game calls serve more to alert the animals of a potentially dangerous situation than to call game into close range.
One type of a well known prior game call is a reed-type diaphragm call that is inserted completely into the caller's mouth when used. Although good quality tones can be produced by these types of mouth calls, they likewise are some of the most difficult calls to master. Accordingly, many efforts have been made by call designers and manufacturers to attach a reed or diaphragm material to a structure mounted on a tube or otherwise develop a hand-held call with the idea of making the call easier to use. While such calls have indeed proven easier to use, such calls typically produce inferior quality sounds. Therefore, with respect to hand-held calls, high quality sounds have been traditionally sacrificed in favor of ease of use.
Other traditional problems with respect to hand-held game calls relate to placement of the diaphragm member on the game call itself. Traditional calls have required random stretching of a membrane over some type of aperture with a fastener, such as an elastic band, securing the membrane in position. The tension of the membrane is therefore adjusted to a different degree each time the latex is placed over the mouthpiece, according to the user of the call. As the tension of the membrane changes, so too does the tone produced by the call. Constant, reliable results in terms of tone are difficult to achieve. The call user must traditionally make several attempts at adjusting the membrane to achieve the tension that results in the best possible tone. While the call is being used, the membrane is commonly displaced which likewise varies the tone.
Still other problems have surfaced with respect to exterior mounted diaphragms for hand-held calls. In calling elk, for example, it is desirable to imitate the low, raspy, guttural sound of a bull elk as well as the higher "music" tones. For most traditional hand-held elk calls, the raspy sound of a bull elk is extremely difficult to imitate. Accordingly, there is a need to provide a hand-held elk call that enables the user to produce a low tone raspy sounding of a rutting bull elk.
Yet another problem associated with traditional hand-held elk calls is the need to simulate the resonance associated with the bugle of a bull elk. Corrugated tubing has long been used as a device to simulate the resonance of a bull elk's bugle. However, such corrugated tubing falls short of the actual sound an elk makes. Various efforts have been made to attach devices to the end of corrugated tubing to simulate the desired resonance. None of these devices, however, has completely solved the difficulty of precision in simulating the resonance of a bull elk's bugle.
Still another problem with respect to traditional hand-held game calls is their lack of versatility. Typically, there is only one manner in which the game call can be used effectively. Also, the components required to use the call must typically remain constant. The make up of most traditional elk calls limits the device from being used in combination with other devices and methods of calling animals, particularly elk.
In view of the foregoing problems, there is a need to develop a game call system that is highly versatile, capable of being used in combination with a plurality of different game calls and methods. There is likewise a need to develop a game call that can be modified to create various different calls from a single modular game call system. In addition, there is a need to produce a game call that includes a diaphragm member that is preadjusted, more versatile to use, and predictably attachable to the game call such that a known, reliable sound can be produced. There is still further a need to produce a game call that imitates the raspy, guttural sound as well as the natural resonance of a bugling bull elk. In addition, there is a need to produce a game call that is easy for a beginner to use, yet allows an advanced caller to imitate with a high degree of precision the sounds of various game animals.


A device for providing power to suppress transient load demands and a system including the device are disclosed. The device includes a sense circuit to detect when a transient event occurs and one or more transistors configured to supply or sink current to the load. The system may include a second power regulator configured to respond to fast transient power demands. In this case, a first power regulator supplies power to the load and responds to slow transient events, while the second regulator responds only to fast transient events.

As the speed of high performance microprocessors increases, the operating voltage of the microprocessors generally decreases while the operating current generally increases. In addition, as the performance and operating current of a microprocessor increase, the power supplied to the microprocessor tends to include more transient power spikes (large shifts in the power demanded by the microprocessor). For example, as a microprocessor executes instructions, particularly at faster rates, severe power transients are likely to occur. These severe current transients, if not properly regulated, can cause noise on the power supply that can induce errors in the microprocessor.
Typical power regulation and transient suppression systems include extensive decoupling devices, including capacitors that are placed across the load between the power supply and ground, in combination with an active voltage regulator to supply instantaneous charge to the microprocessor under dynamic operation. On-chip decoupling techniques, e.g., decoupling capacitors integrated on the die package, generally require a relatively large chip area and tend to reduce reliability of the microprocessor. Typical off-chip decoupling generally has limited effectiveness because of the parasitic inductance in the power supply leads. In addition, off-chip as well as on-chip active voltage regulation employing conventional circuit design approaches generally lack the bandwidth to respond to fast load transients and typical off-chip regulation approaches generally have limited effectiveness in responding to the transients because of the parasitic inductance between the regulation source and the load.
Wide bandwidth series linear regulators employing novel circuit design approaches can respond to the fast transients and provide significantly improved regulation over conventional approaches. However, such regulators may be problematic in several regards. For example, wide bandwidth series linear regulator regulate an entire load current consisting of both static and dynamic, resulting in a significant power dissipation by the wide bandwidth series linear regulator, and a corresponding reduction in the efficiency of the power delivery system.
U.S. Pat. No. 5,629,608, issued May 13, 1997 to Budelman and entitled "Power Regulation System for Controlling Voltage Excursions," discloses a technique that uses a secondary voltage regulator in combination with a variable load element to provide dynamic voltage regulation. This approach uses a voltage window reference circuit to determine when to enable the high frequency secondary regulator. Because the secondary power regulator is not always "on," the overall efficiency of the power regulator is greater than the efficiency of series linear regulators. One disadvantage of this approach, however, is that the window or "dead zone" in which only the slow response, primary voltage regulator is employed, creates a limitation in the effectiveness of the regulator to respond to fast transient events. An additional disadvantage is that the fast regulator is placed in an inactive or off state when the output voltage is within the established window range. Accordingly, the effectiveness of the regulator to rapidly respond to fast transient events that exceed the window range is thus limited by both the sense circuitry response and the turn-on time of the regulator from the inactive or "off state" to an active or "on-state."
Accordingly, a need exists for a voltage regulator and system that overcome the problems of conventional power regulation devices and systems. In particular, regulators and systems that compensate for high current transients and that operate efficiently are desired.

Apparatus and system for providing transient suppression power regulation


The present invention relates to clamp protection circuit and a PFC control circuit employing such clamp protection circuit. Said clamp protection circuit comprises a high voltage isolation module used for receiving power from a high voltage power supply; a voltage clamp module used for receiving an output low voltage from the high voltage isolation module and realizing a clamp protection; and a low voltage bias module used for providing bias voltage to the high voltage isolation module and the voltage clamp module. By employing the clamp protection circuit, the precision of the clamp voltage is improved, the design is simplified and the silicon area is reduced. Meanwhile, the transient response is enhanced. Moreover, when the clamp protection circuit is applied in a PFC control circuit, the design of the whole PFC control circuit is simplified and the silicon area is reduced, and the precision and transient response of the clamp voltage of the clamp protection circuit inside the PFC control circuit are improved.

A clamp protection circuit, that is, a circuit used to protect a part of the circuit from exceeding a clamp value, so as to maintain the circuit operating safely and moreover, the device and function of the circuit won't be damaged. Such voltage clamp protection circuit is widely applied in an integrated circuit design, especially in a power supply controller IC, such as AC-DC converter, power factor correction controller and so on.
Zero-crossing detection module is widely used in Transition Mode Power Factor Correction (PFC) controller chip for detection of zero current crossing event in boost inductor. When the zero current crossing event is detected, a new switch cycle is triggered by turning on power switch. Thus, the system operates at the boundary between continuous and discontinuous current mode or so called Transition Mode. Switching loss and noise can be minimized while the system operates in Transition Mode. Zero-crossing detection function is normally realized by inspecting the voltage change of the secondary side of the transformer depicted in FIG. 1. The operation principle of zero-crossing
detection is described as follows: When the power switch device Q is conducted, the inductor Lb is charged by the rectified AC voltage Vg(t), the diode D at the output terminal is reverse biased, and the load current is obtained from the output capacitor Co, the current of the inductor Lb is linearly increased, and the voltage of Vz is −Vg(t)/n where n is the turn ratio of the transformer. As the RMS value of the AC input voltage is in the range of 85 V to 265 V, the voltage variation of Vz is confined from minus a ten of to a few tens of volts. If such Vz is directly added to the ZCD pin of the PFC controller chip, high voltage stress sustainable device is required, which in turn increases the die size and complicates the circuit design. In order to release the high voltage stress constrain, a clamp protection circuit is introduced.
A prior art voltage clamp design is illustrated at the circuit 100 in FIG. 1. When the voltage of Vz is negative, the isolation high voltage device 106 is conducted, and the gate voltage of device 104 is pulled down, and branch current I1 is generated. The branch current I1 is mirror amplified by a high voltage device 105 to form a branch current I2. The branch current I1 and I2 are combined to have a lower limit clamp current I which goes through the resistor R1 to clamp the voltage of ZCD pin to the voltage of NodeA−Vgs(106), so as not to damage the devices in the chip. However, there is a substantial voltage change for Vz from application to application, and the lower limit clamp current I can vary from few tens μA all the way up to several mA. Therefore, an external high voltage power source Vcc is required for the voltage clamp circuit working properly. FIG. 1 illustrates a prior art circuit design for voltage clamp. In order to work with high voltage power source Vcc, high voltage device 101, 104, 105 and 106 are used that occupies large silicon area and results in high cost. In addition, as the device 101, 104, 105 are voltage-controlled, the accuracy of the clamp voltage of the clamp protection circuit is very limited while the variation of bias current, process and temperature are taken into account. Meanwhile, device 105 is vulnerable to ESD damage as it forms an electrostatic discharge path between the ZCD pin and power supply Vcc. The damage of device 105 will cause the voltage clamp circuit malfunction.
Accordingly, a clamp protection circuit with improved precision of the clamp voltage, simplified design and silicon area saving is proposed.

Clamp protection circuit and a PFC control circuit employing such clamp protection circuit


One illustrative method disclosed herein includes, among other things, performing at least one recess etching process such that a first portion of a high-k oxide gate insulation layer and a first portion of a metal oxide layer is positioned entirely within a first gate cavity and a second portion of the high-k oxide gate insulation layer, a conformal patterned masking layer and a second portion of the metal oxide layer is positioned entirely within a second gate cavity, performing at least one heating process to form a composite metal-high-k oxide alloy gate insulation layer in the first gate cavity, while preventing metal from the metal oxide material from being driven into the second portion of the high-k oxide gate insulation layer in the second gate cavity during the at least one heating process, and forming gate electrode structures in the gate cavities.

1. Field of the Invention
Generally, the present disclosure relates to the manufacture of semiconductor devices, and, more specifically, to various novel methods of forming transistor devices with different threshold voltage levels and various integrated circuit products containing such transistors.
2. Description of the Related Art
In modern integrated circuits, such as microprocessors, storage devices and the like, a very large number of circuit elements, especially transistors, are provided on a restricted chip area. Transistors come in a variety of shapes and forms, e.g., planar transistors, FinFET transistors, nanowire devices, etc. The transistors are typically either NMOS (NFET) or PMOS (PFET) type devices wherein the "N" and "P" designation is based upon the type of dopants used to create the source/drain regions of the devices. So-called CMOS (Complementary Metal Oxide Semiconductor) technology or products refers to integrated circuit products that are manufactured using both NMOS and PMOS transistor devices. Irrespective of the physical configuration of the transistor device, each device comprises drain and source regions and a gate electrode structure positioned above and between the source/drain regions. Upon application of an appropriate control voltage to the gate electrode, a conductive channel region forms between the drain region and the source region.
For many early device technology generations, the gate structures of most transistor elements (planar and FinFET devices) were comprised of a plurality of silicon-based materials, such as a silicon dioxide and/or silicon oxynitride gate insulation layer, in combination with a polysilicon gate electrode. However, as the channel length of aggressively scaled transistor elements has become increasingly smaller, many newer generation devices employ gate structures that contain alternative materials in an effort to avoid the short channel effects which may be associated with the use of traditional silicon-based materials in reduced channel length transistors. For example, in some aggressively scaled transistor elements, which may have channel lengths on the order of approximately 10-32 nm or less, gate structures that include a so-called high-k dielectric gate insulation layer (k-value of approximately 10 or greater) and one or more metal layers that function as the gate electrode have been implemented. Such alternative gate structures—typically known as high-k/metal gate structures (HK/MG structures)—have been shown to provide significantly enhanced operational characteristics over the heretofore more traditional silicon dioxide/polysilicon gate structure configurations.
One well-known processing method that has been used for forming a transistor with a high-k/metal gate structure is the so-called "gate last" or "replacement gate" technique. Generally, the replacement gate process involves: forming a basic transistor structure (planar, FinFET, nanowire, etc.) with a sacrificial gate structure positioned between sidewall spacers; forming the source/drain regions for the device; performing the necessary anneal process to activate implanted dopant materials; removing the sacrificial gate structure so as to define a gate cavity for the replacement gate structure between the spacers; depositing a high-k gate insulation layer and a plurality of metal layers in the gate cavity; performing a CMP process to remove excess materials positioned outside of the gate cavity; recessing the gate materials within the gate cavity to make room for a gate cap layer; and forming a gate cap layer in the gate cavity above the recessed gate materials. However, as the gate length of transistor devices has decreased, the physical size of the gate cavity has also decreased. Thus, it is becoming physically difficult to fit all of the layers of material needed for an HK/MG replacement gate structure within such reduced-size gate cavities, particularly for NMOS devices, due to the greater number of layers of material that are typically used to form the HK/MG structures for the NMOS devices as compared to PMOS devices. For example, as gate lengths continue to decrease, voids or seams may be formed as the various layers of material are deposited into the gate cavity. That is, as the layers of material for the replacement gate are formed in the gate cavity, the remaining space within the gate cavity becomes very small. As the later metal layers are formed, the remaining space within the gate cavity may be only about 1-2 nm in width or even smaller. In some cases, there may be essentially no remaining space in the gate cavity. This may lead to so-called "pinch-off" of metal layers such that voids or seams may be formed in the overall replacement gate structure, which may result in devices that perform at levels less than anticipated or, in some cases, the formation of devices that are simply not acceptable and have to be discarded.
In manufacturing modern integrated circuit products, transistor devices are sometimes intentionally formed so as to exhibit different threshold voltage levels. In general, a transistor having a relatively lower threshold voltage will operate at a higher switching speed than that of a corresponding transistor with a relatively higher threshold voltage level. Such "low-Vt" (LVT) transistor devices are typically employed in portions of an integrated circuit product where device performance or speed is desirable or critical, e.g., in the logic circuits of an integrated circuit product. Unfortunately, such low-Vt devices tend to exhibit more off-state leakage currents, which means that they consume more power than would otherwise be desired. Thus, all other things being equal, such low-Vt devices are poor choices in applications where reduced power consumption is important, e.g., mobile computing applications, cell phone applications, etc. The opposite is true for so-called "high-Vt" (HVT) transistor devices—they tend to operate at slower switching speeds (a negative) but the off-state leakage currents of such high-Vt devices is less than that of the low-Vt devices (a positive). Such high-Vt devices are typically employed in portions of an integrated circuit product where device performance or speed is less critical, e.g., SRAM circuits. Device designers can also make so-called "regular-Vt" (RVT) transistor devices that have a threshold voltage level that is intermediate to that of the low-Vt devices and the high-Vt devices. Of course, the absolute value of these threshold voltage levels (low, regular and high) may vary depending upon a variety of factors.
Device designers have employed several techniques to intentionally change the threshold voltage levels of transistor devices. One technique simply involves changing the gate length—the distance between the source region and the drain region—of the transistor. All other things being equal, a transistor with a shorter gate length will operate at faster speeds, but it will exhibit higher off-state leakage currents than a corresponding transistor having a larger channel length. Device dimensions have decreased to the point where gate lengths are so small that manufacturing devices with ever smaller gate lengths is very challenging, time-consuming and expensive. Thus, adjusting threshold voltage levels by continuing to reduce the channel length of the transistor devices is becoming more problematic.
Another technique that device designers have used to vary the threshold voltage of transistors involved varying the amount of dopant material used in forming the wells in which the transistors were formed. All other things being equal, the greater the dopant concentration in a well region, the greater will be the threshold voltage of the resulting transistor, and vice-versa. However, in some applications, such as forming FinFET devices, it is very challenging to get the appropriate doping levels, due to random dopant fluctuations and the normal Gaussian distribution of ion implantation processes in general.
Yet another technique that device designers have used to form transistor devices with differing threshold voltage levels simply involves making gate stacks of different materials having different work function values so as to ultimately achieve the desired variation in the threshold voltage levels of the devices. The term "work function" (WF) is commonly used in the art of semiconductor design and manufacturing to refer to the minimum energy needed to remove an electron from the surface of a metal. The work function of a metal is typically a constant characteristic of that metal material and it is usually measured in electron-volts (eV). In general, in CMOS integration schemes using a silicon substrate, a work function metal having a work function near the conduction band edge of silicon (about 4.0 eV) is necessary for NMOS type devices, while a different work function metal having a work function near the valance band edge of silicon (about 5.1-5.2 eV) is necessary for PMOS devices. Thus, in CMOS integration schemes employing high-k gate dielectric materials, at least two types of gate stacks are needed, i.e., a stack of suitable materials that satisfies the individual work function requirements for the PMOS devices and a different stack of materials that satisfies the individual work function requirements for the NMOS devices. As noted above, the gate stack for the PMOS devices provides a flat band voltage closer to the valence band edge of the material of the channel of the PMOS devices, and the gate stack for the NMOS devices provides a flat band voltage closer to the conduction band edge of the material of the channel of the NMOS devices. As is readily apparent, the above-mentioned layer stacking process can become quite unwieldy and complex as more and more versions of transistor devices with different threshold voltage levels are fabricated. Among other problems, etching of metals tends to be more difficult and the different physical heights of the gate stacks of the various devices can cause problems during subsequent processing operations.
Yet another technique involves forming a high-k gate insulation layer (e.g., hafnium oxide) in the replacement gate cavities for each of the various devices; forming a patterned protective metal layer on the high-k gate insulation layer that covers the high-k gate insulation layer in some of the devices while leaving the high-k gate insulation layer exposed in other devices; forming a threshold voltage (Vt) shifting oxide material (e.g., lanthanum oxide) on the exposed portions of the high k insulation layer and on the patterned protective metal layer; forming a metal capping layer above the Vt-shifting oxide material; forming a blanket layer of amorphous silicon above the metal capping layer; and performing a heat treatment to drive material from the Vt-shifting oxide material, such as lanthanum, into the contacted high-k gate insulation layer that is contacted by the Vt-shifting oxide material. In the case where the high-k gate insulation material is hafnium oxide, this process converts the hafnium oxide to hafnium-lanthanum-oxide. The Vt-shifting oxide material, the metal capping layer and the patterned protective metal layer are then removed, and the replacement gate structure is completed by forming additional materials in the gate cavity as previously described. In general, the introduction of lanthanum decreases the threshold voltage level of NMOS devices but increases the threshold voltage level of PMOS devices. In this manner, the threshold voltage levels of the various NMOS and PMOS devices may be adjusted on an integrated circuit product.
Unfortunately, as mentioned above, as the width of the gate cavity has become much smaller, forming the additional materials in the gate cavities to modify the threshold voltages of the devices using a Vt-shifting oxide material, as described above, is becoming even more difficult. The present disclosure is directed to novel methods of forming transistor devices with different threshold voltage levels and various integrated circuit products containing such transistors that may solve or reduce one or more of the problems identified above.

Methods of forming transistor devices with different threshold voltages and the resulting products


A charge pump provides a multiplication factor of 4/3 by using a three-phase mode of operation. In a first mode, first and second capacitors are charged from an input voltage while a third capacitor drives the output voltage based on stored charge in the third capacitor. In a second mode, the voltage potential across the first capacitor is added to the input voltage to generate the output voltage. In a third mode, the voltage potential across the first capacitor is subtracted from the sum of the input voltage and the voltage potential across the second capacitor to generate the output voltage. Operated in this manner, the first, second, and third capacitors will provide the desired 4/3× voltage multiplication. This relatively low multiplication factor can be beneficial in applications such as white LED driver circuits, particularly where the input voltage is provided by a battery.

1. Field of the Invention
The invention relates to the field of electronic circuits, and in particular, to an efficient, low noise fractional charge pump.
2. Related Art
White LEDs (light emitting diodes) are becoming increasing common in modern electronic devices. For example, portable electronics such as cell phones, personal digital assistants (PDAs), and game systems often include graphical displays that are backlit by white LEDs. However, the battery power used in such devices generally provides a supply voltage that is below or just at the voltage required to drive white LEDs (typically around 3.6 V). For example, a modern rechargeable lithium ion or lithium polymer battery is typically rated to have a nominal output voltage of 3.7 V, but may actually provide a voltage in the range of 2.7 to 4.2 V, depending on the charge state of the battery.
This variability in battery supply voltage necessitates voltage boosting circuitry in most white LED-based portable devices. One of the most common schemes is to use a charge pump. A charge pump uses the charge storage capabilities of capacitors to generate an output voltage that is elevated with respect to a supply voltage. Modern white LED-based portable devices generally use one of two types of conventional charge pumps.
The first type of charge pump is known as a "2×" charge pump (sometimes referred to as a "voltage doubler"). FIGS. 1A and 1B show schematic diagrams of a conventional 2× charge pump 100 for receiving an input voltage V_IN1 and providing an elevated output voltage V_OUT1 to a load D130 (depicted as an LED for exemplary purposes). Charge pump 100 includes an input terminal 101, a charging capacitor C110, a storage capacitor C120, and an output terminal 102. While not shown for clarity, charge pump 100 also includes interconnect circuitry for connecting capacitors C110 and C120 in the configurations shown in FIGS. 1A and 1B.
Charge pump 100 operates by switching between the two phases of operation shown in FIGS. 1A and 1B. In FIG. 1A, a charging phase is shown, in which capacitor C110 is connected between input terminal 101 and ground, while capacitor C120 is connected between ground and output terminal 102 (load D130 is always connected between output terminal 102 and ground). During this charging phase, capacitor C110 is charged by input voltage V_IN1 to a voltage V11. Because capacitor C110 is connected directly between input voltage V_IN1 and ground, the voltage V11 stored on capacitor C110 will eventually be equal to input voltage V_IN1. During this charging of capacitor C110, a voltage V12 stored on capacitor C120 is provided as output voltage V_OUT1 for driving load D130.
Then, in a discharging phase shown in FIG. 1B, capacitor C110 is connected between input terminal 101 and output terminal 102, with capacitor C110 inverted with respect to input terminal 101. In other words, during the charging phase depicted in FIG. 1A, the positive plate in capacitor C110 (marked with a triangular indicator) is connected to input terminal 101, while the negative plate (unmarked) is connected to ground, thereby allowing input voltage V_IN1 to charge capacitor C110. Then, during the discharge phase depicted in FIG. 1B, the negative plate of capacitor C110 is connected to input terminal 101. The potential across capacitor C110 (i.e., voltage V11) is therefore added to input voltage V_IN1, thereby providing the sum of voltages V_IN1 and V11 at output terminal 102. Since voltage V11 is raised to voltage V_IN1 during the charging phase (FIG. 1A), the sum of voltages V_IN1 and V11 is simply twice the input voltage (i.e., 2*V_IN1). Thus, during the discharging phase (FIG. 1B), twice the input voltage V_IN1 is provided at output terminal 102 to drive load D130. At the same time, capacitor C120 is charged to twice the input voltage. When charge pump switches back to the charging phase, capacitor C120 resumes driving load D130 while capacitor C110 is recharged by input voltage V_IN1.
In this manner, 2× charge pump 100 can raise a battery voltage (e.g., 3.7 V) to a level (e.g., 7.4 V) that is more than sufficient to drive a white LED. However, the voltage doubling provided by 2× charge pump 100 is typically a much larger scaling effect than is required for white LED applications. Specifically, as noted above, a white LED typically exhibits a forward voltage in the range of 3.5 to 4.0 V, while a lithium ion battery source may provide anywhere in the range of 2.7 V to 4.2 V. Therefore, an LED driver circuit incorporating charge pump 100 would require attenuation circuitry to drop the 5.4 to 8.4 V charge pump output voltage down to the level required by the white LED. Such attenuation circuitry (e.g., a resistor in series with the LED) may dissipate a significant amount of power to provide the desired voltage attenuation, and can therefore substantially reduce the power efficiency of an LED driver circuit that incorporates 2× charge pump 100. Therefore, to improve the efficiency of charge pump-based LED driver circuits, a "3/2×" charge pump are commonly used.
FIGS. 2A and 2B show schematic diagrams of a conventional 3/2× charge pump 200 for receiving an input voltage V_IN2 and providing an elevated output voltage V_OUT2 to a load D240 (depicted as an LED for exemplary purposes). Charge pump 200 includes an input terminal 201, charging capacitors C210 and C220, a storage capacitor C230, and an output terminal 202. While not shown for clarity, charge pump 200 also includes interconnect circuitry for connecting capacitors C210, C220, and C230 in the configurations shown in FIGS. 2A and 2B.
Charge pump 200 operates by switching between the two phases of operation shown in FIGS. 2A and 2B. In FIG. 2A, a charging phase is shown, in which capacitors C210 and C220 are serially connected between input terminal 201 and ground, while capacitor C230 is connected between ground and output terminal 202 (load D240 is always connected between output terminal 202 and ground). During this charging phase, capacitors C210 and C220 are charged by input voltage V_IN2 to voltages V21 and V22. Under steady state conditions, capacitors C210 and C220 will both be charged to half of input voltage V_IN2 during this charging phase. Meanwhile, a voltage V23 stored on capacitor C230 is provided as output voltage V_OUT2 for driving load D240.
Then, in a discharging phase shown in FIG. 2B, capacitors C210 and C220 are connected in parallel between input terminal 201 and output terminal 202. In a manner similar to that described with respect to FIG. 1B, capacitors C210 and C220 are inverted with respect to input terminal 201. Specifically, whereas during the charging phase, the positive plate (marked with a triangular indicator) of capacitor C210 is connected to input terminal 201, during the discharging phase, the negative plate (unmarked) of capacitor C210 is connected to input terminal 201. Likewise, whereas during the charging phase, the positive plate (marked with a triangular indicator) is the upstream plate (i.e., the plate "closer" to input voltage V_IN2), during the discharging phase, the negative plate (unmarked) of capacitor C220 is connected to input terminal 201. Hence, during the discharging phase, the negative plate of capacitor C220 is the upstream plate.
Because capacitors C210 and C220 are inverted and connected in parallel after input terminal 201, the output voltage V_OUT2 provided during the discharging phase shown in FIG. 2B is equal to the sum of input voltage V_IN2 and the average of voltages V21 and V22 on capacitors C210 and C220, respectively. As described above with respect to FIG. 2A, both capacitors C210 and C220 are charged to half of input voltage V_IN2 during the charging phase. Therefore, the output voltage V_OUT2 provided during the discharging phase is simply equal to one and a half times input voltage V_IN2 (i.e., 1.5*V_IN2).
Therefore, the output voltage range of 3/2× charge pump 200 is between 4.05 V and 6.3 V when provided with a lithium ion battery voltage (i.e., 2.7 V to 4.2 V) as in input voltage. Because the output voltage range provided by 3/2× charge pump 200 is lower than that provided by 2× charge pump 100 for a given input voltage range, a white LED driver circuit incorporating 3/2× charge pump 200 requires less voltage attenuation than a driver circuit incorporating 2× charge pump 100, thereby allowing the 3/2× charge pump-based driver circuit to exhibit greater power efficiency.
However, as portable devices become increasingly advanced while at the same time shrinking in size, power efficiencies must continually be improved. While 3/2× charge pump 200 can reduce power consumption in a white LED driver circuit over 2× charge pump 100, 3/2× charge pump 200 is not ideally suited for such an application, since the forward voltage for a white LED (i.e., 3.5 to 4.0 V) is still significantly lower than even the lowest output voltage provided by the 3/2× charge pump 200 (i.e., 4.5 V). This voltage difference represents an inefficiency that will ultimately reduce overall device battery life.
Therefore, a 4/3× charge pump has been developed that applies a 4/3× multiplication factor to an input voltage (e.g., a 2.7 V to 4.2 V input voltage range is transformed into a 3.6 V to 5.6 V output voltage range). This output voltage range is still sufficient to drive white LEDs, but requires less voltage attenuation at the top end. Therefore, a 4/3× charge pump can improve LED drive circuit efficiency over 3/2× charge pumps and 2× charge pumps.
Conventional 4/3× charge pumps include three charging capacitors and one storage capacitor to provide the desired 4/3× voltage multiplication. FIGS. 3A and 3B show schematic diagrams of a conventional 4/3× charge pump 300 for receiving an input voltage V_IN3 and providing an elevated output voltage V_OUT3 to a load D350 (depicted as an LED for exemplary purposes). Charge pump 300 includes an input terminal 301, charging capacitors C310, C320, and C330, a storage capacitor C340, and an output terminal 302. While not shown for clarity, charge pump 300 also includes interconnect circuitry for connecting capacitors C310, C320, C330, and C340 in the configurations shown in FIGS. 3A and 3B.
Charge pump 300 operates by switching between the two phases of operation shown in FIGS. 3A and 3B. In FIG. 3A, a charging phase is shown, in which capacitors C310, C320, and C330 are serially connected between input terminal 301 and ground, while capacitor C340 is connected between ground and output terminal 302 (load D350 is always connected between output terminal 302 and ground). During this charging phase, capacitors C310, C320, and C330 are charged by input voltage V_IN3 to voltages V31, V32, and V33, respectively. Under steady state conditions, capacitors C310, C320, and C330 will be charged to one third of input voltage V_IN3 during the charging phase. Meanwhile, a voltage V34 stored on capacitor C340 is provided as output voltage V_OUT3 for driving load D350.
Then, in a discharging phase shown in FIG. 3B, capacitors C310, C320, and C330 are connected in parallel between input terminal 301 and output terminal 302. In a manner similar to that described with respect to FIG. 2B, capacitors C310, C320, and C330 are inverted with respect to input terminal 301. Therefore, the output voltage V_OUT3 provided during the discharging phase shown in FIG. 3B is equal to the sum of input voltage V_IN3 and the voltage on each of capacitors C310, C320, and C330. As described above with respect to FIG. 3A, C310, C320, and C330 are all charged to one third of input voltage V_IN3 during the charging phase. Therefore, the output voltage V_OUT3 provided during the discharging phase is simply equal to one and one third times input voltage V_IN3 (i.e., 4/3*V_IN3).
Therefore, the output voltage range of 4/3× charge pump 300 is between 3.6 V and 5.6 V when provided with a lithium ion battery voltage (i.e., 2.7 V to 4.2 V) as in input voltage. Because the output voltage range provided by 4/3× charge pump 300 is lower than that provided by 3/2× charge pump 200 for a given input voltage range, a white LED driver circuit incorporating 4/3× charge pump 300 requires less voltage attenuation than a driver circuit incorporating 3/2× charge pump 200, thereby allowing the 4/3× charge pump-based driver circuit to exhibit greater power efficiency.
Unfortunately, this improved power efficiency provided by 4/3× charge pump 300 comes at the expense of an additional capacitor (C330) over 3/2 charge pump 200. The relatively large capacitance values (and hence, capacitor sizes) required to provide reasonable charge pump power capabilities can preclude inclusion of the additional capacitor "on chip", due to die size limitations. Moving the capacitor(s) "off chip" reduces this size burden but adds a new requirement of additional pins in the chip package to communicate with the external capacitor(s). As a result, chip package size and cost is negatively impacted.
Accordingly, it is desirable to provide a system and method for driving white LEDs that maximizes power efficiency while minimizing die area requirements.

LED bias current control using adaptive fractional charge pump


Adjustable tools which may be linked through a coupling so that the tool and the handle are rotatable relative to each other in a released condition and locked relative to each other in a locked position. The tool and the handle may thus be adjusted to have the tool at any desired orientation to the handle and in a locked position in that orientation.

Many tools have been proposed which provide for adjustable wrenches. One such tool is shown in U.S. Pat. No. 5,419,221 issued May 30, 1995 to James Cole. This patent discloses a wrench which has a splined pin fixed to the head of the wrench with the handle being moveable between an upper released position and a lower locked position. This wrench has the disadvantage that the pin protrudes for a substantial distance above the wrench in all instances. This patent is hereby incorporated in its entirety by reference.
U.S. Pat. No. 5,775,184 issued Jul. 7, 1998 to James Cole discloses a similar wrench. U.S. Pat. Nos. 5,820,288, 6,000,299 and 6,161,982 also relate to tools which use splined connections in various ways. These patents are further incorporated in their entirety by reference.
Other variations have been proposed which require a smooth pin positioned on the wrench head with the pin being used to engage an opening in the handle which includes flat surfaces moveable into engagement at various positions to lock the wrench and the handle into fixed positions. These wrenches also require that the pin protrude a substantial distance above the top of the wrench.
All of these wrenches are subject to certain shortcomings. Many of the wrenches previously developed to have releasable coupling involve the use of springs so that the wrench may be released only while the pin is held in a particular position from which it returns when released. This results in certain disadvantages, particularly with respect to the protrusion of elements from the sides or tops of the wrenches or the tools. Accordingly, a continued effort has been directed to the development of simpler, more rugged and less protrusive coupling systems for tools.


A compression or fold completion device used to uniformly compress a folded edge of a workpiece, such as a box blank, in order to allow the blank to more easily be utilized in subsequent packaging operations. The device includes a pressure roller mounted to a rotatable adjustment member. The rotational axis of the pressure roller is offset from the rotational axis of the adjustment member. The adjustment member is in turn connected to an actuating assembly, which may include an arm secured at one end to the adjustment member and at the other end to an extendible and retractable actuator, in order to enable the actuator to rotate the adjustment member and selectively position the pressure roller in engagement with a folded edge of a workpiece passing beneath the pressure roller.

Corrugated or paperboard boxes or cartons are utilized to store and ship a wide variety of items. The types and sizes of corrugated or paperboard boxes vary widely in order to accommodate the types of items that are to be contained within the box.
In the formation of corrugated or paperboard boxes, a sheet of material, such as cardboard or corrugated board, is cut, scored and folded to form a collapsed box or container blank that can be erected, such as by a packaging machine or by an end user, to form the box having the desired shape. During the scoring and folding process for the box blank, a number of score lines are formed in various sections of the sheet in order to allow the portions of the sheet on opposite sides of the score line to be folded with respect to one another. When the sheet is completely formed into the collapsed box or container blank, parts of the sheet are secured to one another, such as by a suitable adhesive or by fasteners such as staples, such that the collapsed box or container blank can be quickly erected for use in containing the desired item or items within the interior of the box or container. In forming the sheet into the blank, certain areas of the sheet are folded so that the edge areas of the sheet are positioned in overlapping relationship to enable the edge areas to be secured together. With regard to the folded sections or edges of the blanks, it is desirable to maintain folded edges of uniform size in each respective blank, such that when the blanks are fit into a machine which erects the blank to package items therein, the dimensions of the folded blanks are the same.
However, due to the conventional methods utilized to form the folded edges in corrugated or paperboard blanks, the folded and scored areas of the individual blanks are often formed to have shapes, thicknesses, or other dimensions that are different from one another. The differences in the folded areas and/or edges of the blanks causes inconsistencies in or problems with the operation of the erecting machine into which the blanks are fed, because the variations in the folded edges of the blanks result in improper feeding of the box blank into the machine and/or damage to the box blank.
As a result, it is desirable to develop a machine and method which can operate to engage a folded edge formed in a blank to make the folded edge more consistent and uniform across a number of box blanks passed through the machine. It is also desirable to develop such a machine and method which can be easily integrated into a box blank forming machine as is known in the art.