This invention relates new and improved processes for the preparation of arylalkylsulfonic acids derived from aromatic or substituted aromatic molecules and AOS acid (generally a mixture of alkenesulfonic acid and sultones, produced from the sulfonation of alpha olefins) and to cleaning compositions comprising said arylalkylsulfonic acids. The invention involves the use of a superacid catalyst to effectuate the conversion of AOS acid and aromatic reactants to arylalkylsulfonic acid under substantially anhydrous conditions, whereby a substantial improvement in the rate of conversion of the reactants to arylalkylsulfonic acid and/or improvement in mono-alkylation selectivity is realized, as compared to methods of preparation previously disclosed. Also useful as an alkylation promoter is the arylalkylsulfonic acid reaction product itself, produced in situ or from a previous reaction (i.e., a self-catalyst heel). The new processes generally afford arylalkylsulfonic acids with substantially improved conversion yields, highly desirable lighter color, and reduced odor, as compared to previously known methods. The acids produced by the inventive process may be neutralized to form arylalkylsulfonates (i.e., a neutralized form of the acid) which are useful in a variety of end use applications as surfactants and/or emulsifiers.

1. Field of the Invention
This invention relates to arylalkylsulfonic acids and new and improved processes for the preparation of arylalkylsulfonic acids. These acids can be made from aromatic or substituted aromatic molecules and alpha olefin sulfonic acid ("AOS acid"; generally a mixture of alkenesulfonic acid and sultones, produced from the sulfonation of alpha olefins). More particularly, the invention relates to the use of a superacid catalyst (or an effective alkylation promoter) to effect the reaction of AOS acid and aromatic reactants to produce arylalkylsulfonic acids under substantially anhydrous conditions and to produce cleaning compositions derived therefrom.
2. Description of Related Art
Alkylbenzene sulfonic acids and the corresponding sulfonates (i.e., neutralized sulfonic acid) have found wide spread use as surfactants in a variety of detergent, emulsion and industrial applications. These materials typically comprise a substituted aromatic ring, with an alkyl group at one position on the ring and a sulfonic acid moiety attached to another position on the ring; polyalkylates may also be present. Synthetic detergents based on the reaction of propylene tetramer and benzene using Lewis acid catalysts, such as AlCl3 for example, were once widely used in laundry detergent formulations, but such use has diminished significantly due to environmental concerns. Also used in such formulations, although somewhat less popular, are alkylbenzene sulfonates based on branched alkyl groups. Linear alkylbenzenes starting materials which are based on the reaction of linear olefins (see, e.g., U.S. Pat. No. 3,585,253; to Huang, Jun. 15, 1971) or linear chloroparaffins (see, e.g., U.S. Pat. No. 3,355,508; to Moulden, Nov. 28, 1967) with benzene in the presence of a Lewis Acid catalyst are also well known in the surfactant art. These materials possess excellent detergency properties and are rapidly biodegradable. More recently, HF (or the Detal process variation) has become the alkylation catalyst of choice for the preparation of alkylated benzenes and other alkylated aromatic compounds, based upon environmental objections to the use of AlCl3.
Detergent use is the predominant market for alkylbenzene sulfonates. However, these products are also employed in considerable quantities as additives in lubricants, coolants, industrial surfactant formulations, dispersants, emulsifiers, corrosion inhibitors and demulsifiers. Alkylbenzene sulfonates find widespread use in many industries among which are the petroleum recovery, refining, emulsion polymerization, textile dyeing, agriculture, institutional cleaning, drilling fluids, paper processing, coatings, and adhesives industries.
Present processes for producing alkylaromatics are designed to optimize the yields of detergent alkylate (predominantly monoalkylbenzene). The yields of heavy alkylate (predominantly dialkylbenzene) are therefore low. These heavy alkylates, however, find considerable demand as oil soluble surfactants and specialty chemicals. Dialkylbenzene sulfonates (see, e.g., U.S. Pat. Nos. 4,004,638; to Burdyn, et. al., Jan. 25,1977; 4,536,301; to Malloy, et. al., Aug. 20, 1985), alkyl xylene sulfonates (see, e.g., EP121964) and dialkyl phenol polyethoxy alkyl sulfonates (see, e.g., U.S. Pat. No. 4,220,204; to Hughes, et.al., Sep. 2, 1980) have all been used to increase the productivity of crude oil. Recently, U.S. Pat. No. 6,043,391; to Berger, et. al., Mar. 28, 2000, disclosed new sulfonic acid materials and processes for producing di- and tri-alkylbenzenes where both linear and branched alkyl groups are present on the same benzene ring.
Alkoxylated alkyl substituted phenol sulfonates have been produced and found to be useful as surfactants in numerous applications (see, e.g., U.S. Pat. No. 5,049,311; to Rasheed, et. al., Sep. 17, 1991, listing many uses for these compounds including use in enhanced oil recovery processes, as corrosion inhibitors, hydrotropes, foaming agents in concrete formation, surfactants for dye carriers, surfactants for fiber lubricants, surfactants for emulsion polymerization, as textile detergents, as foaming agents for drilling fluids, and as agricultural emulsifiers).
Alpha-olefin sulfonates (AOS) are widely used as surfactants in personal care, emulsion polymerization and fire-fighting foam applications, as well as a wide variety of other uses. These materials are typically produced on a commercial scale by sulfonating an alpha-olefin with SO3, in a falling film sulfonator (see, e.g., Weil, Stirton and Smith; JOACS Vol 42, October 1965, pp 873-875, describing the reaction of hexadecene-1 and octadecene-1 with SO3 followed by neutralization with NaOH to form the corresponding hexadecene sulfonates). The AOS precursor alpha-olefin sulfonic acid typically comprises alkene sulfonic acid and various sultones. As is well known to those of skill in the art, AOS correspondingly does not comprise a single component, but predominantly a mixture of two materials: an alkene sulfonate and a hydroxyalkane sulfonate. The hydroxyalkane sulfonate is present due to the formation of intermediate sultones when SO3 reacts with the alpha olefin. Neutralization, with NaOH for example, not only neutralizes the alkene sulfonic acid formed during the sulfonation reaction, but also opens the sultone ring forming additional alkene sulfonate and hydroxyalkane sulfonate. Thus, neutralization results in a final product comprising approximately 60-70% alkene sulfonate, approximately 30% 3-, and 4-hydroxy sulfonate and approximately 0-10% disulfonate material; these percentages can vary greatly depending on the sulfonation and neutralization conditions which are utilized.
U.S. Pat. No. 3,845,114, to Sweeney, et. al., Oct. 29, 1974, teaches that the addition of limited amounts of water to alkene sulfonic acid with subsequent heating to 150° C. converts the sultone to alkene sulfonic acid and hydroxyalkane sulfonic acid. The presence of water during the ring-opening prevents dimerization of the alkene sulfonic acid. Removal of the water dehydrates the hydroxyalkane sulfonic acid back to sultone and alkene sulfonic acid, but leaves the already present alkene sulfonic acid intact. Repeating the process of adding limited amounts of water, heating to 150° C. and removing the water reduces the hydroxyalkane sulfonic acid content and increases the alkene sulfonic acid content. This "conversion" process is shown below in Scheme 1. Typically, for example, for a linear alkyl material, a may be an integer from 1 to 3 and b may be an integer from about 10 to 13, giving c+d=10-15. Very recently, U.S. Pat. No. 6,043,391 ("the '391 patent"); to Berger, et. al., Mar. 28, 2000, disclosed sulfonic acid materials and processes for producing such materials which required the use of this water/conversion process for the preparation of such materials. In the '391 patent, crude alkene sulfonic acid (containing significant amounts of sultone) produced from the reaction of an alpha-olefin and SO3, is subjected to the aforementioned water addition and removal process for conversion of sultone to alkene sulfonic acid, which is then used to alkylate a variety of aryl compounds such as benzene, naphthalene, substituted benzene or substituted naphthalene.

Ault, et. al., JOACS, Vol 39, February 1962, pp 132-133, describes the acid catalyzed addition of phenols and phenyl ethers to oleic acid. It was discovered that by using an acid catalyst, such as polyphosphoric acid or methane sulfonic acid, production of aryl substituted stearic acids was possible, as depicted in Scheme 2. Typically, for example, for a linear alkyl material, m+n may equal 14, thus o+p equal 15.

U.S. Pat. No. 3,502,716; to Kite, Mar. 24, 1970, discloses the use of alkali or alkaline earth metal carboxylates reacted at high temperature with hydroxy sulfonic acid anhydrides to produce the corresponding alkali or alkaline earth alkene sulfonate salts.
U.S. Pat. No. 3,951,823; to Straus, et. al., Apr. 20, 1976, teaches the reaction of AOS acid with itself and other sulfonated monomers to produce disulfonated dimers having good foaming properties for use in foam well cleanout applications. The '823 patent specifically requires that both monomers contain a sulfonate group and further teaches that suitable starting materials must contain at least about 5 nonaromatic carbon atoms per molecule, a sulfonate functional group, i.e., —SO3—, and one of the following: (1) a carbon-carbon double bond, i.e., —CH═CH—; (2) an alkanol hydroxy group, or a sulfonate ester group of which the above sulfonate group is a component, i.e., a sultone, and the functional groups must be substituents attached to non-aromatic carbon atoms with the balance being carbon and/or hydrogen.
Also, as general alkene sulfonic acid and aromatic sulfonic acid background, see e.g., U.S. Pat. No. 2,336,113, Suter, C., Dec. 26, 1944, disclosing the condensation of olefin sulfonic acids with aromatic compounds; U.S. Pat. No. 3,845,114, Sweeney, et. al., Oct. 29, 1974 disclosing processes for conversion of sultones to alkene sulfonic acids; U.S. Pat. No. 3,721,707, Straus, et. al., Mar. 20, 1973, describing organic sulfonic acid oligomers and processes for producing same; U.S. Pat. No. 3,873,590, Straus, et. al., Mar. 25, 1972, describing methyl esters of sulfonic acid oligomers; U.S. Pat. No. 3,875,102, Straus, et. al., Apr. 1, 1975, describing use of methyl esters of sulfonic acid oligomers plasticized with polyvinyl chloride; U.S. Pat. No. 3,953,338, Straus, et. al., describing the use of oligomeric sulfonic acids for foam well cleanout; and U.S. Pat. No. 5,034,161, Alink, B. A., Jul. 23, 1991, describing the synthesis of aryl-substituted aliphatic acids.
The forgoing references teach several ways in which alkene sulfonic acid materials can be reacted with aromatic materials to produce derivative sulfonic acid materials. However, to date, prior processes have required the conversion of crude acid from the reaction of an alpha-olefin and SO3, via the repeated hydrolysis and dehydration with water, resulting in the formation of alkene sulfonic acid as taught by U.S. Pat. No. 3,845,114. Such conversion is time consuming, inconvenient, and on a commercial scale, can be quite costly. Additionally, prior alkene sulfonic acid alkylation processes have failed to produce alkylated products with high reaction throughput rates (i.e. yields) and/or high levels of selectivity toward the desired mono-alkylate products, versus undesirable dialkylate and/or AOS acid dimmer/oligomer materials. Typically, prior art processes which attempted to increase selectivity toward mono-alkylate production via the use of excess aromatic compound were not successful and lower rates were typically obtained.
In view of the limitations associated with previously known alkene sulfonic acid processing technologies, a need exists for a superior alkylation process whereby a substantial improvement is realized in terms of the reaction rate and reaction product selectivity. Additionally, there is a need for an alkene sulfonic acid alkylation process which does not require tedious conversion of crude alkene sulfonic acid (i.e., conversion whereby water is added and removed in a cyclic manner (and heating is applied) to and from the crude AOS acid to convert the sultone to alkene sulfonic acid) prior to alkylation. Further, there is a need for an alkene sulfonic acid alkylation process which does not require digestion of the crude alkene sulfonic acid prior to its use in the alkylation process.

Arylalkylsulfonic acids and methods for producing same


An isolated monoclonal antibody or an antigen-binding fragment thereof is disclosed. The antibody or the antigen-binding fragment is characterized by: (a) having a specific binding affinity to epithelial cell adhesion molecule (EpCAM) comprising the amino acid sequence of SEQ ID NO: 1; (b) having a specific binding affinity to cancer cells expressing EpCAM said cancer cells being selected from the group consisting of oral cancer cells, nasopharyngeal cancer cells (NPC), colorectal cancer cells, and ovarian cancer cells; and (c) having no binding affinity to human umbilical vein endothelial cell (HUVEC) and normal nasal mucosal epithelia (NNM). Also disclosed is an isolated monoclonal antibody or an antigen-binding fragment thereof that has a specific binding affinity to an epitope within the sequence of KPEGALQNNDGLYDPDCDE (SEQ ID NO: 63) located within the EGF-like domain II of epithelial cell adhesion molecule (EpCAM). Methods of using the same are also disclosed.

Head and neck squamous cell carcinoma (HNSCC) is the sixth most common malignancy in the world in developed countries. Oral squamous cell carcinoma (OSCC) is the most common cancer of the head and neck region. Despite significant improvements in diagnosis, local management, and chemotherapy of head and neck cancer, there has been no significant increase in long-term survival rates over the past 30 years. The overall mortality rate for intra-oral cancer remains high at approximately 50%, even with modern medical services. Therefore, prevention and early diagnosis and treatment of high-risk pre-malignant lesions are instrumental in the reduction of HNSCC related deaths.

Anti-epithelial cell adhesion molecule (EpCAM) antibodies and methods of use thereof


In a stuff-synchronized time division multiplex (TDM) transmission system, an incoming TDM signal is delayed so that a plurality of TDM frame sequences are successively delayed by one time slot and appear at the inputs of a data selector. A control circuit is provided for deriving a channel-by-channel selection signal from stuff specification bits contained in the incoming TDM signal. The data selector is responsive to the selection signal to select a channel in one of the TDM frame sequences and delivers the selected channel as a TDM output signal to a time division switch, or cross-connect in which it is decomposed into channels for switching to a desired route.

The present invention relates generally to a time division multiplexed (TDM) transmission system, and more specifically to a phase alignment circuit for a stuff-synchronized TDM transmission system having a cross-connect function.
Pulse stuffing is a well known technique for synchronizing asynchronous lower-level dignal signals before multiplexing them into a higher-level outgoing multiplex signal. This is done by storing the input data streams into a memory and reading it at a nominal bit rate so that all input streams have equal bit rates. According to "positive-zero-negative" stuffing technique, the outgoing data stream has a special time slot known as V-slot which initially contains dummy bits/bytes assigned respectively to the lower-level incoming signals. If the bit rate of a given incoming signal is lower than the nominal rate, the dummy bit of the given incoming signal in the V-slot of the outgoing signal is replaced with a stuff bit/byte (positive stuffing), and if the former is higher than the latter, the dummy bit/byte of the incoming signal is removed from the V-slot (negative stuffing). If the incoming bit rate is equal to the nominal rate, zero stuffing is effected by simply leaving the associated dummy bit/byte in the V slot. The higher-level multiplex signal further contains stuffing specification bits which indicate whether each bit/byte in the V slot is a positive or negative stuff bit/byte, or a dummy bit/byte.
There is often a need to decompose a higher-level multiplex signal into channel component signals for switching to a desired route by interchanging their time slots using a cross-connect, or time division switch. However, as multiplex signals pass through several TDM hierarchical stages during transmission, new stuff bits/byte may be inserted. This often results in the individual channels developing timing discrepancies from a reference phase. To permit the time division switch to properly effect time slot interchange, the phase differences of the individual channels of a frame sequence need to be aligned to the reference phase. As illustrated in FIG. 1, it is the current practice to decompose a frame into individual channels by a TDM demultiplexer 1 for coupling to memories or timing adjustment circuits 2-1.about.2-n and extract stuffing specification bits (SSB) from the frame with a detector 3. Timing adjustment circuits 2 perform timing adjustments on the decomposed channels in accordance with timing information obtained by the extracted stuffing specification bits. The outputs of the timing adjustment circuits 2 are multiplexed again by a TDM multiplexer 4 and supplied to the time division switch where it is further decomposed into channels to be switched to a desired route. Since timing adjustment circuits 2 must be provided in a one-to-one correspondence with the channels of a frame, the total cost and size of the timing adjustment system increase in proportion to the channels multiplexed in the frame.

Phase alignment circuit for stuffed-synchronized TDM transmission system with cross-connect function


Disclosed is an electrochromic device comprising: (a) a first electrode; (b) a second electrode; (c) an electrochromic material; and (d) a gel polymer electrolyte containing an ionic liquid. A method for manufacturing the same is also disclosed. The electrochromic device uses a gel polymer electrolyte comprising an ionic liquid. Therefore, there is no problem related with electrolyte leakage. Additionally, it is possible to manufacture electrochromic devices by using plastic materials, because the ionic liquid gel polymer electrolyte permits structural deformation with ease. Further, because the electrochromic device uses an ionic liquid, it is possible to minimize side reactions between constitutional elements of an electrochromic device and electrolyte.

In general, electrochromic devices are referred to as devices that experience a change in color due to an electrochemical redox reaction caused by the application of an electric field, resulting in a change in light transmission characteristics. Typical electrochromic materials include tungsten oxides found by S. K. Deb in 1969. Thereafter, electrochromism of various organic/inorganic materials has been studied, followed by continuous development and research into the application of electrochromic devices comprising such materials in the field of smart window and display technology.
Electrochromic materials are classified into reduction-colored materials and oxidation-colored materials. Reduction-colored materials are those colored by the acquisition of electrons and typically include tungsten oxides, Meanwhile, oxidation-colored materials are those colored by the loss of electrons and typically include nickel oxides and cobalt oxides. Other electrochromic materials include inorganic metal oxides such as Ir(OH)x, MoO3, V2O5, TiO2, etc., conductive polymers such as PEDOT (poly-3,4-ethylenedioxy thiophene), polypyrrole, polyaniline, polyazulene, polythiophene, polypyridine, polyindole, polycarbazole, polyazine, polyquinone, etc., and organic electrochromic materials such as viologen, anthraquinone, phenocyazine, etc.
The above inorganic metal oxides generate a change in color when lithium ions or hydrogen ions present in an electrolyte are doped into the inorganic metal oxides. On the contrary, as depicted in the following formula 1, conductive polymers, for example, polyaniline shows a light yellow color when it is present in a completely reduced state, while showing a blue color when it is present in a state doped with anions by oxidation. Various colors can be realized depending on the kinds of such conductive polymer. [Formula 1]

In addition to the above-mentioned inorganic metal oxides and conductive polymers, organic electrochromic materials include viologen compounds such as 4,4′-dipyridinium salt represented by the following formula 2. A viologen compound has three types of oxidation states, i.e., v2+ (colorless), V+ (blue) and V0 (light yellow), each oxidation state showing a different color: [Formula 2]

Meanwhile, U.S. Pat. No. 5,441,827 (Graetzel et al.) discloses a device having high efficiency and high response rate, the device being manufactured by coating an electrochemically active organic viologen compound, as a single layer, onto the surface of a nanoporous thin film electrode obtained by sintering metal oxide nanoparticles. Additionally, the device uses a mixture of a lithium salt with an organic solvent such as γ-butyrolactone and propylene carbonate, as liquid electrolyte. However, the device using an organic solvent-containing liquid electrolyte has disadvantages in that quenching rate is low, residual images are present after quenching and that the organic materials may be decomposed easily during repeated developing/quenching cycles. Moreover, because the device uses an organic solvent-containing liquid electrolyte, it has additional disadvantages in that evaporation and exhaustion of the electrolyte may occur, the electrolyte may leak out from the device to cause an environmentally unfavorable problem, and that formation into thin films and film-shaped products is not allowed.
U.S. Pat. No. 5,827,602 (V. R. Koch et al.) discloses an ionic liquid electrolyte based on AlCl3-EMICI (aluminum chloride-1-ethyl-3-methylimidazolium chloride) including a strong Lewis acid. The ionic liquid such as AlCl3-EMICI has no vapor pressure, and thus can solve the problem of exhaustion and decomposition of electrolyte. However, it may emit toxic gases when exposed to a small amount of moisture and oxygen. Moreover, the ionic liquid is problematic in that it has high reactivity with organic/inorganic compounds added to the electrolyte in a small amount and that it is easily decomposed at a temperature of 150° C. or higher.
U.S. Pat. No. 6,667,825 (Wen Lu et al.) discloses an electrochromic device that uses a conductive polymer and an ionic liquid such as [BMIM][BF4] containing no Lewis acid, as electrode and electrolyte, respectively. Use of the ionic liquid containing no Lewis acid results in improvement of stability and lifespan of electrochromic devices. Additionally, it is possible to solve, at least in part, the problems with which organic solvent-based liquid electrolytes and ionic liquid electrolytes containing a Lewis acid are faced, i.e., the problems of residual images after quenching, decomposition of electrolytes or the like. However, because the electrochromic device according to U.S. Pat. No. 6,667,825 uses an ionic liquid as liquid electrolyte, it still has problems in that leakage of electrolyte may occur and that formation into thin films and film-shaped products is not allowed.
In order to complement such disadvantages of liquid electrolytes, polymer electrolytes have appeared recently. For example, Maroco-A.De Paoli discloses a polymer electrolyte formed by mixing an organic liquid compound with poly(epichlorohydrin-co-ethylene oxide) (see, Electrochimica Acta 46, 2001, 4243-4249). However, the above polymer electrolyte shows a significantly low conductivity of about 10−5 S/cm. Additionally, S. A. Agnihotry discloses a polymer electrolyte having a high ion conductivity of 10−3 S/cm at room temperature, the polymer electrolyte being formed by adding a small amount of PMMA (polymethyl methacrylate) polymer and fumed silica to an electrolyte formed of propylene carbonate containing 1M LiClO4 added thereto (see, Electrochimica Acta. 2004). However, because the above polymer electrolyte still uses an organic solvent as electrolyte, it is not possible to solve the problems of low quenching rate, residual images after quenching, decomposition and exhaustion of organic solvent-based electrolytes, or the like.

Gel polymer electrolyte containing ionic liquid and electrochromic device using the same


A reprogrammable subscriber terminal of a subscription television service which can have the control program code of its control processor modified by downloading new program code from the headend. The control processor stores a boot program in an internal read only memory. Upon start up and resets, the boot program determines whether the control program should be changed from a command sent from the headend. The command, termed a parameters transactions, includes the number of expected download program code transactions required to complete the control code modification, the memory space areas where the code is to be loaded, and the channel over which the download program code transactions are to be transmitted. The channel is tuned and when the boot program receives all the download program code transactions accurately and stores them, the boot program will cause the control program to be restarted at a selected address of the new or modified control program code which has been downloaded. The boot program may download code to different configurations of subscriber terminals including those with Flash EPROM or extended memories from plug-in expansion modules.

The invention pertains generally to a subscriber terminal for CATV or other subscription television systems and is more particularly directed to a method and an apparatus for reprogramming a subscriber terminal.
The subscriber terminal, more commonly known as a set top terminal, is an integral component of subscription television systems. These subscription television systems can be cable television (CATV) systems, SMATV systems, multi-point, multi-distribution (MMDS) systems, or direct-to-home (DTH) systems. The terminals have conventionally provided the functions of tuning particular channels of the subscription television system which are outside the subscriber's television receiver capability. Further, they provide conditional access to the particular subscription service through authorization codes and in many services provide tiering or authorization of particular channels of the service by descrambling.
More recently, the subscriber terminal has become user friendly by providing an interactive, on-screen display and other user functions that allow the subscriber to manipulate the subscription service and his television receiver in additional ways. These features include such things as volume control, pay-per-view event confirmation, favorite channel listings, sleep timer features, parental control capability, messaging, program timers for recording VCR programs, and other consumer friendly operational features.
In addition, some of the features found in newer television receivers can be provided for older receivers by the subscription terminal. For example, channel identifiers, mute and volume control can be accomplished by the subscriber terminal making the subscriber's television receiver appear to be a newer model with these capabilities.
An advantageous example of a subscriber terminal with these advanced consumer features is the 8600 model series of subscriber terminals manufactured by Scientific-Atlanta, Inc. of Lawrenceville, Ga.
Currently, these subscriber terminals are controlled by programmable microcontrollers which have their control programs stored in a read only memory (either integral with the microprocessor or included in a separate integrated circuit) or stored in a separate non-volatile memory such as an EPROM or a battery backed up RAM. With the current programming methods, the control program of the subscriber terminal can only be changed by removing the memory device (or the device incorporating the memory) and replacing it. This method is very inconvenient and expensive for changes which are to be made to subscriber terminals as it means a home visit from the service personnel of the subscription service provider. Subscription television systems may have several hundred thousand subscriber terminals which may need such upgrades.
Therefore, it would be advantageous to be able to reprogram the subscriber terminals of a subscription television service to change on screen parameters, change subscriber interfaces, add new features, and modify the control program from a remote location.

This patent is subject to a terminal disclaimer.


A memory cell configuration has word lines and bit lines that extend transversely with respect thereto. Memory elements with a giant magnetoresistive effect are respectively connected between one of the word lines and one of the bit lines. The bit lines are each connected to a sense amplifier by means of which the potential on the respective bit line can be regulated to a reference potential and at which an output signal can be picked off. The memory cell configuration can be used both as an MRAM and as an associative memory.

The invention relates to a memory cell configuration with memory elements having a layer structure with a giant magnetoresistive effect (GMR).
The term GMR element is used in the pertinent art for layer structures which have at least two ferromagnetic layers and a non-magnetic layer arranged in between and exhibit the so-called GMR (giant magnetoresistive) effect. The GMR effect encompasses the fact that the electrical resistance of the GMR element is dependent on whether the magnetization in the two ferromagnetic layers is oriented in a parallel or antiparallel.
It has been proposed (see, for example, D. D. Tang et al., IEDM 95, pages 997-99; D. D. Tang et al., IEEE Trans. on Magnetics, Vol. 31, No. 6, 1995, pages 3206-08; F. W. Patten et al., Int. Non Volatile Memory Technology Conf., 1996, pages 1-2) to use such GMR elements as memory elements in a memory cell configuration. For this purpose, GMR elements in which the magnetization direction of one ferromagnetic layer is fixed for example by an adjacent antiferromagnetic layer are used as memory elements. The memory elements are connected in series via bit lines. Word lines run transversely with respect to the latter and are insulated from both the bit lines and the memory elements. Signals applied to the word lines cause a magnetic field as a result of the current flowing in the word line. The magnetic field influences the memory elements situated underneath. In order to write information, signals are applied to a bit line and a word line, which intersect above the memory cell to be written to. At the point of intersection, the signals cause a magnetic field which is sufficient for the magnetization reversal. In order to read the information, a pulsed signal is applied to the word line. The pulsed signal switches the relevant memory cell back and forth between the two magnetization states. The current through the bit line is measured and the resistance of the corresponding memory element is determined from the measured current. S. Tehrani et al. IEDM 96, pages 193 ff., have proposed using a GMR element having ferromagnetic layers of different thicknesses as the memory element. The magnetic field for writing information is dimensioned such that it only influences the magnetization in the thinner of the two ferromagnetic layers. The magnetization in the thicker of the two ferromagnetic layers remains uninfluenced by it.
It is an obvious drawback that the read-out operation with pulsed signals requires an increased outlay on circuitry in these memory cell configurations.
It is accordingly an object of the invention to provide a memory cell configuration with GMR elements, which overcomes the above-mentioned disadvantages of the heretofore-known devices and methods of this general type and which can be read with a reduced outlay on circuitry.
With the foregoing and other objects in view there is provided, in accordance with the invention, a memory cell configuration, comprising:
a plurality of substantially parallel word lines and a plurality of substantially parallel bit lines running transversely to the bit lines; memory elements having a layer structure with a giant magnetoresistive effect, the memory elements being respectively connected between one of the word lines and one of the bit lines and having a higher resistance than the word lines and the bit lines;
a sense amplifier connected to each of the bit lines for regulating a potential on a respective the bit line to a reference potential and outputting an output signal.
In accordance with an added feature of the invention, the sense amplifier has a feedback operational amplifier.
In other words, the memory cell configuration has word lines bit lines traversing the word lines. Memory elements having a layer structure with a very large magnetoresistive effect (GMR), that is to say GMR elements, are provided. The GMR elements are respectively connected between one of the word lines and one of the bit lines and have a higher resistance than the word lines and the bit lines. The bit lines are each connected to a sense amplifier by means of which the potential on the respective bit line can be regulated to a reference potential and at which an output signal can be picked off. In order to read this memory cell configuration, all the word lines which are not selected are put at the reference potential. A signal with a different potential is applied to the selected word line. A current path from the selected word line to all the bit lines is closed as a result of this. The resistance of the memory element situated at the point of intersection of the word line with the respective bit line can be determined from the output signal at the respective sense amplifier, the electrical characteristic parameters of the sense amplifier, such as the feedback resistance, for example, and the reference potential and the bit line resistance. A pulsed signal is not necessary, therefore, in order to read this memory cell configuration.
The sense amplifier preferably has a feedback operational amplifier. The non-inverting input of the operational amplifier is connected to reference potential, for example to ground. The bit line is connected to the inverting input. If the reference potential is 0 volts, then this operational amplifier ensures that 0 volts are present on the bit line. The output signal of the operational amplifier is a measure of the resistance of the selected memory element.
All known GMR elements are suitable as the memory element, provided that they have a higher resistance than the bit line and the word line in both magnetization states. The GMR effect is greater if the current flows perpendicularly through the layer stack than if the current flows in parallel into the layers.
In accordance with an additional feature of the invention:
the memory elements each have two ferromagnetic layers and a non-magnetic layer arranged between the two ferromagnetic layers;
an antiferromagnetic layer is disposed adjacent to one of the ferromagnetic layers and determines a polarization direction of a magnetization in the adjacent ferromagnetic layer; and
the memory elements each have two magnetization states.
It is advantageous to use an insulating, non-magnetic layer since the GMR effect, which is brought about by a spin-polarized tunneling current through the insulating, non-magnetic layer arranged between the two ferromagnetic layers, is much greater in these structures than if a non-insulating, non-magnetic layer is used. The different resistances assigned to two different logic values 0 and 1 in the memory cell configuration can be better distinguished as a result of this.
As an alternative, the memory elements may each have two ferromagnetic layers and a non-magnetic layer arranged in between, one of the ferromagnetic layers being thicker than the other ferromagnetic layer or the ferromagnetic layers being formed from different materials with different magnetic properties, or have a non-magnetic, non-insulating layer.
Materials containing at least one of the elements Fe, Ni, Co, Cr, Mn, Gd are suitable, inter alia, for the ferromagnetic layers. The thickness of the ferromagnetic layers is at most 20 nm and preferably lies in the range between 2 and 10 nm. The oxides Al2O3, NiO, HfO2 or TiO2, NbO, SiO2 are all suitable as insulating material for the non-magnetic layer, which acts as a tunnelling insulator. Cu or Ag is suitable as non-insulating material for the non-magnetic layer. The thickness of the non-magnetic layer lies in the range between 1 and 4 nm, preferably between 2 and 3 nm.
In order to write information to one of the memory elements, a respective signal is applied to the associated word line and to the associated bit line. As a result, a current flows via the word line and the bit line and induces a magnetic field in each case. At the point of interception of the word line and bit line, the total magnetic field resulting from superposition of the two magnetic fields is large enough to ensure magnetization reversal of the memory element situated there. Outside the point of intersection, the individual magnetic fields are too small for magnetization reversal of the memory elements situated there.
In applications where an increased magnetic field is necessary or desirable for the purpose of writing, it lies within the scope of the invention to additionally provide write lines running essentially parallel to one another, which write lines run parallel to the bit lines, for example. These write lines are insulated from the word lines and the bit lines. By applying a signal to the corresponding write line, it is possible to amplify the magnetic field at the point of intersection with the selected word line and thus to support the writing operation.
The memory cell configuration is suitable as a magnetic RAM (MRAM).
Furthermore, the memory cell configuration can be operated as an associative memory. For this purpose, a respective threshold value element is provided with regard to the bit lines, which element is connected to the output of the sense amplifier of the respective bit line.
In an associative memory, as disclosed for example in K. Goser et al., IEEE Micro, 9 (1989) 6, pages 28-44, an input signal is applied simultaneously to all the word lines. The input signal has as many places as word lines. The current is summed at each of the bit lines and the output signal is formed with a threshold value element. In the associative memories disclosed in Goser et al., IEEE Micro, 9 (1986) 6, pages 28-44, the memory cell comprises only a conventional resistor or a transistor and is connected between intersecting word lines and bit lines. These conventional resistors and transistors cannot be altered during operation, with the result that the memory is not capable of learning. As an alternative, the memory cells are realized as EEPROM cells, thereby enabling programming, which are more complicated to fabricate, however.
One advantage of the memory cell configuration according to the invention when used as an associative memory is that the GMR elements in the memory elements can be reprogrammed as often as desired during operation. Therefore, the associative memory can learn information during operation.
In accordance with a further embodiment of the invention, a differential amplifier is provided with regard to two bit lines in each case. The inputs of the differential amplifier are in each case connected to the output of the sense amplifiers of the associated bit lines. This memory cell configuration is preferably likewise used as an associative memory, the memory elements in the two bit lines which are connected to the same word line in each case being programmed complementarily with respect to one another. During read-out, there is formed on one bit line the complementary signal of the other. The output signal is formed from these complementary signals in the differential amplifier. This differential method considerably improves the interference immunity in respect of processed fluctuations.
Other features which are considered as characteristic for the invention are set forth in the appended claims.
Although the invention is illustrated and described herein as embodied in a memory cell configuration and its use as a magnetic RAM and as an associative memory, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.

Memory cell configuration, magnetic ram, and associative memory


An illustrative adaptive radio communications system comprises a cluster of waveform and application processor entities coupled and a plurality of transceivers. The transceivers convert radio frequency (RF) signals into digital in-phase and quadrature (I/Q) data, which is sent to the waveform processor entities via a network fabric. The waveform processor entities perform low-level waveform processing and the application processor entities perform high-level, distributed signal processing. The system and related methods are capable of processing multiple programmable waveforms of varying complexity.

As is known in the art, a computer cluster (or "cluster") comprises a set of connected computers that work together so that, in many respects, they can be viewed as a single system. The components of a cluster are typically connected to each other through fast local area networks (LANs), with each "node" (i.e., a computer used as a server) running its own instance of an operating system. Clusters are usually deployed to improve performance and availability compared to a single computer, while typically being more cost-effective than single computers of comparable speed or availability. Using off-the-self software clustering and distributed processing software, high-performance computing can be achieved using conventional hardware.
As is also known, software-defined radios (SDR) typically combine specialized hardware with waveform processing software (typically referred to as "waveform applications" or "waveforms") to provide the flexibility to receive and transmit widely different radio protocols based solely on the software used.

Adaptive radio communications systems and methods


Pressure flow regulator for use in pneumatic pressure control devices for maintaining a constant predetermined output pressure from a given constant or variable input pressure. The regulator includes a main housing, an inlet port, an outlet port, an air adjustment regulator and an insert assembly forming air passages when installed in the main housing. The insert is formed such that when inserted in a bore machined into a blank, the insert and the bore mate to form chambers and passages needed for pressure regulation of the pneumatic medium, in this case air.

Pneumatic pressure controls are widely known and practiced in many forms in pneumatically powered and controlled systems. These systems usually require a constant predetermined pressure of a pneumatic medium, typically air, from a constant or varying input pressure source. Generally, a pneumatic pressure control device is composed of an inlet port, an outlet port, a valve control for communicating the inlet port with the outlet port when in a first position and providing an air tight seal between the inlet port and the outlet port when in a second position, and a regulator for controlling communication of the inlet port to the outlet port. In operation, when the outlet pressure drops below the predetermined pressure set in the regulator, the piston is engaged and the inlet port is connected to the outlet port until the outlet pressure reaches the predetermined pressure. Once the predetermined pressure is reached, the piston opens the seal between the outlet and inlet ports.
In manufacturing the air pressure control device, typically, a blank is cast and machined to form chambers and passages through which the pneumatic medium flows. Plugs, pistons and other parts needed to control flow and pressure are then formed and installed in the device. Machining the chambers and passages requires considerable cost and, consequently, if reduced without affecting quality, could reduce the cost of manufacturing the pneumatic pressure control device.
The present invention provides an insert that is formed such that when inserted in a bore machined into a blank, the insert and the bore mate to form the chambers and passages needed for pressure regulation. Preforming the insert to be subsequently mated with the bore reduces the amount of machining needed for the pressure control device, reduces the amount of assembly of the individual parts of the device, and thus reduces the cost of manufacturing the device.


A fiber laser system includes a predominately single spatial mode, linearly polarized master oscillator providing a set of optical pulses and a polarization-maintaining optical isolator optically coupled to the master oscillator. The fiber laser system also includes a fiber amplifier optically coupled to the optical isolator and including a power amplifier comprising a double clad gain fiber, one or more pump lasers, and a pump coupler. The fiber laser system further includes a pulse compression stage optically coupled to the fiber amplifier. The pulse compression stage includes a volume holographic phase grating. Moreover, the fiber laser system includes a nonlinear frequency conversion stage optically coupled to the pulse compression stage.

This invention relates generally to high performance pulsed laser frequency conversion systems that operate with high power, visible and near-infrared spectral output, narrow spectral linewidths, and freedom to adjust pulse parameters and characteristics.
Fiber lasers have advanced to become economical and efficient high power infrared laser sources. Average optical output powers of tens of kilowatts are currently available in commercial fiber laser systems. FIG. 1 is a schematic of a typical fiber laser system known in the art with a master oscillator fiber amplifier (MOFA) architecture. The master oscillator (also known as the seed laser) emits a low power optical signal that is coupled into the amplifier section through an optical isolator. The optical isolator protects the master oscillator from any light counter-propagating back through the amplifier section. The amplifier section consists of a length of gain fiber that is pumped by one or more pump lasers (typically diode lasers) through a pump coupler. The gain fiber may be multi or single spatial mode, polarization random or maintaining, cladding pumped or core pumped, and may have a variety of dopants (for example Yb, Er, Nd, Pr, etc.) depending on the emission and pumping wavelengths. The pump laser light is absorbed by the dopants in the gain fiber, raising the dopants into an excited state. The emission from the master oscillator is amplified through stimulated emission as it interacts with the excited dopants implanted in the fiber core.
Many variants of the above design are used, including but not limited to multiple gain stages with multiple pumps, the inclusion of various filtering elements, a delivery fiber at the output of the laser, and use of forward and/or backward propagating pumps. Fiber lasers can operate with a wide range of output parameters to satisfy the varying constraints of an application. It is the specifications of the individual fiber amplifier subsystems that determine the output emission. The output emission of a fiber laser can be specified with the average output optical power, peak output optical power, temporal pulse width, center optical wavelength, polarization, spatial mode, and spectral bandwidth. Pumping limitations, gain limitations, optical damage to components, and nonlinear impairments require a unique system design of the elemental blocks of a fiber laser to achieve the desired set of output parameters.
It is desirable to use fiber laser systems to replace current solid state and gas laser systems used in illumination, inspection, and micromachining in the visible and ultraviolet (UV) wavelengths. However, fiber lasers operate in the near infrared (NIR) wavelength region and require nonlinear frequency conversion (FC) to convert the NIR output emission into usable visible and UV wavelengths. Since the efficiency of the nonlinear frequency conversion is typically very low (<1%) at optical powers less than 100 Watts, it is advantageous to use a pulsed laser system with high peak power as the fundamental source. However, many illumination and inspection systems are designed to use continuous wave (CW) laser sources. In order to use a pulsed source in these applications the pulse repetition rate needs to be much higher than the response rate of the system. The term quasi-continuous wave (QCW) is used within this application to describe a pulsed light source of sufficiently high repetition rate so as to appear CW to the application. The repetition rate typically must be greater than 10 MHz to appear QCW in illumination and inspection applications. Thus, in order to gain a significant benefit in peak power, pulse widths much less than 1 ns are required. A common class of lasers that produce a steady stream of sub-nanosecond pulses is mode-locked lasers.
Nonlinear frequency conversion generally requires high peak power, narrow optical bandwidth, linear polarization, and single spatial mode. However, it has not yet been practical to simultaneously satisfy these requirements in a sub-nanosecond, pulsed fiber laser with repetition rate greater than 10 MHz due to nonlinear impairments. In particular Stimulated Brillouin Scattering (SBS), Stimulated Raman Scattering (SRS), and Self Phase Modulation (SPM) limit the performance of fiber lasers operating in this regime. These nonlinear impairments increase with higher peak intensity in the fiber, with narrower spectral bandwidth, shorter pulse width (especially SPM), and by propagating linear polarized light in a single spatial mode. Examples of mode-locked fiber lasers are known in the art that reduce nonlinear impairments because of the large natural bandwidth of the femtosecond pulses they create, as well as nanosecond pulsed fiber lasers that use a master oscillator with artificially high optical bandwidth to reduce nonlinearities. Similarly, fiber lasers with kilowatt average power are known in the art. These lasers function in continuous wave operation, and do not provide the beam quality, peak power, and polarization properties useful for efficient frequency conversion. Thus, there is a need in the art for improved methods and systems for high performance pulsed laser frequency conversion.

Method and apparatus for fast pulse harmonic fiber laser


The invention provides ileS polypeptides and DNA (RNA) encoding ileS polypeptides and methods for producing such polypeptides by recombinant techniques. Also provided are methods for utilizing ileS polypeptides to screen for antibacterial compounds.

Chlamydiaceae is a family of obligate intracellular parasites. All members share a common developmental cycle. Chlamydia infect a wide range of vertebrate host, particularly humans. Chlamydia trachomitis is one of the two recognized species of Chlamydia. Human infections caused by Chilamydia trachomitis are widespread. This species is one of the most common cause of sexually transmitted disease in the world. It is also one of the main causes of infertility in humans.
The frequency of Chlamydia trachomatis infections has risen dramatically in the past 20 years. This has been attributed to the emergence of multiply antibiotic resistant strains and an increasing population of people with weakened immune systems. It is no longer uncommon to isolate Chlamydia trachomatis strains which are resistant to some or all of the standard antibiotics. This has created a demand for both new anti-microbial agents and diagnostic tests for this organism.
The t-RNA synthetases have a primary role in protein synthesis according to the following scheme:
______________________________________ Enzyme + ATP + AA Enzyme.AA-AMP + PPi Enzyme.AA-AMP + t-RNA Enzyme + AMP + AA-t-RNA ______________________________________
in which AA is an amino acid.
Inhibition of this process leads to a reduction in the levels of charged t-RNA and this triggers a cascade of responses known as the stringent response, the result of which is the induction of a state of dormancy in the organism. As such selective inhibitors of bacterial t-RNA synthetase have potential as antibacterial agents. One example of such is mupirocin which is a selective inhibitor of isoleucyl t-RNA synthetase. Other t-RNA synthetases are now being examined as possible anti-bacterial targets, this process being greatly assisted by the isolation of the synthetase.
Clearly, there is a need for factors, such as the novel compounds of the invention, that have a present benefit of being useful to screen compounds for antibiotic activity. Such factors are also useful to determine their role in pathogenesis of infection, dysfunction and disease. There is also a need for identification and characterization of such factors and their antagonists and agonists which can play a role in preventing, ameliorating or correcting infections, dysfunctions or diseases.
The polypeptides of the invention have amino acid sequence homology to a known Homo sapiens isoleucyl tRNA synthetase protein. (H. sapiens IRS SwissProt P41252; Shiba K., Suzuki N., Shigesada K., Schimmel P., NODA T.; Proc. Natl. Acad. Sci. U.S.A., 91:7435-7439 (1994).)

DNA encoding Chlamydia trachomatis isoleucyl tRNA synthetase polypeptides


A power control apparatus for controlling power consumption in customer premises equipment (CPE) for use in a content and data distribution network includes a detector, operative to determine an operational status of a connection between the CPE and a headend in the content and data distribution network, and a controller coupled with the detector. The controller is operative to place the CPE in a first mode of operation when the operational status is indicative of a loss of connectivity between the CPE and the headend. The apparatus further includes switching circuitry coupled with the controller. The switching circuitry is operative in the first mode to disable power to at least a portion of a first subset of functional modules in the CPE, to thereby reduce power consumption in the CPE.

Formerly, a cable network was utilized solely for delivering entertainment; namely, television. With the advent of the Internet and the rise in demand for broadband two-way access, the cable industry sought new ways of exploiting its existing plant. Pure coaxial ("coax") cable networks were replaced with hybrid fiber networks (HFNs) using optical fiber from the headend to the demarcation with the subscriber coax (usually at a fiber node). Currently, a content-based network, a non-limiting example of which is a cable television network, may afford access to a variety of services besides television, including, for example, broadband Internet access, telephone/voice service, and the like.
With an ever-increasing availability of voice and data communications services over the cable network, many embedded multimedia terminal adapters (eMTAs), gateways, cable modems, and other customer premises equipment (CPE), are provided with a battery backup to help ensure against disruption of services. This is particularly important for life-line or other critical telephone and data services which utilize a cable network as a communications medium, rather than a traditional private branch exchange (PBX) telephone line. Thus, in the event of a power failure and connectivity remains operative, the battery backup provides power to the CPE to beneficially enable users to continue utilizing voice and/or data communications services over the cable network.
Unfortunately, the battery backup is only capable of supplying power for a limited period of time. Therefore, for extended power outages, such as, for example, during severe weather events, depending on the power requirements of the CPE, the battery backup may be depleted before connectivity is restored. In this scenario, the CPE is rendered inoperable even when connectivity is restored but the power loss remains.

Apparatus and method for reducing power consumption in customer premises equipment


A method for fabricating a MEMS device having a top cap and an upper sense plate is described. The method includes producing a device wafer including an etched substrate, etched MEMS device components, and interconnect metal, a portion of the interconnect metal being bond pads and adding a metal wraparound layer to a back side, edges, and a portion of a front side of the device wafer. The method also includes producing an upper wafer including an etched substrate and interconnect metal, bonding the device wafer and the upper wafer, and dicing the bonded upper wafer and device wafer into individual MEMS devices.

This invention relates generally to micro-electromechanical systems (MEMS) devices and processes, and more specifically to processes for providing MEMS devices which incorporate top caps or covers with upper sense plates.
One method of producing micro-electromechanical structures (MEMS) is by bonding a patterned silicon wafer to a glass (usually pyrex) substrate. Portions of the silicon wafer are etched away, leaving a mechanical silicon structure anchored to the glass substrate. The process is initiated with a glass wafer. A cavity is formed in the wafer using a wet or dry etching process. A depth of the etch determines a separation between the structure's capacitive elements. Metal layers are deposited and patterned on the glass, forming conductive electrodes and interconnects. A heavily boron doped (p++) epitaxial layer is grown on a separate, lightly doped silicon substrate. A pattern is etched into the silicon wafer to a depth greater than the thickness of the epitaxial layer. The glass and silicon wafers are bonded together using anodic bonding. Using an etchant that etches lightly doped silicon but not p++ silicon, the undoped portion of the silicon substrate is etched away, leaving the freestanding microstructures. Such a process is generally referred to herein as a silicon-glass MEMS process.
In most known MEMS devices, the microstructure is exposed to the ambient environment during operation. At least some of the known problems associated with exposed microstructures are described below. Furthermore, if it is desired to provide a special operating environment, or simply protect the microstructure from the ambient environment, the protection must be done at a packaging step.
One known packaging step is to bond a glass wafer containing recesses, sometimes referred to as an upper wafer or top cap, on top of the previously fabricated glass/silicon wafer, which is then sometimes referred to as a device wafer. At least part of the silicon structure on the device is a continuous support ring that completely surrounds, but may or may not be connected to, the microstructure. The second glass wafer is bonded to the seal ring, forming the cavity. In addition, it is desirable to have electrical leads extending from outside the cavities into the cavities. While such methods and devices have been contemplated, they have not yet been successfully integrated into a manufacturing environment.

Methods and systems for providing MEMS devices with a top cap and upper sense plate


An integrated circuit device includes a dielectric layer disposed onto a first substrate, the dielectric layer having a sacrificial cavity formed therein. The circuit also includes a membrane layer formed onto the dielectric layer and suspended over the sacrificial cavity, and a capping substrate bonded to the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer.

A micro-electromechanical system (MEMS) device is a piece of technology with components on a very small scale. MEMS devices may have components within the micrometer size range and sometimes within the nanometer size range. A typical MEMS device may include processing circuitry as well as mechanical components, such as for various types of sensors. These sensors may be used as part of a Radio Frequency (RF) switch, gyroscope, accelerometer, or motion sensor, responses from which are provided to and processed by the included processing circuitry.
The mechanical components of MEMS devices are often provided in chambers, in which the components are allowed to move. Often there are two chambers connected through one or more vias. One way to form such chambers is to use a sacrificial material. Specifically, a cavity is formed into a particular layer. That cavity is then filled with a sacrificial material. Subsequent layers may then be deposited on top of the sacrificial material. A via is then formed through the subsequent layers to expose the sacrificial material. The sacrificial material can then be released through various chemical processes. While this is an effective way to form chambers, it is desirable to minimize the number of sacrificial layers when fabricating MEMS devices.

Taiwan Semiconductor Manufacturing Company, Ltd.


A method of transforming a G-code type part program into a STEP-NC language type part program is provided and more particularly, a method is provided for enabling a G-code type part program mainly used in the field to be easily applied to a STEP-NC controller without a troublesome correction. A STEP-NC language type part program is automatically created, which is composed of machining operation information, manufacturing feature information, machining strategy information and the like, through a process of analyzing G-codes from the G-code type part program and tool information. A method of transforming a G-code into a STEP-NC part program includes receiving a G-code part program, tools and a numerical controller; creating G-code block information, and partitioning the entire part program on a workingstep basis. The method further includes creating machining strategy information and creating the STEP-NC part program by arranging the machining workingsteps.

Since a three-axis numerically controlled milling machine was developed in the MIT in 1952, numerical control (NC) machining techniques have been remarkably developed and evolved into computer numerical control (CNC) machining techniques along with advancements in electronic engineering technologies including micro-processor technologies.
A CNC machining method that is most generally used in the field is a method of creating a part program from shape design information including drawings of a product through computer-aided design/computer-aided manufacturing (CAD/CAM) software and inputting the part program into a machine tool mounted with a CNC controller (hereinafter, referred to as a CNC machine tool), thereby performing machining.
In such a CNC machining method, an operator makes a process plan including a material feature, a removal volume, a removal sequence, tools to be used, machining conditions and the like based on hard-copy drawings or a product feature created by a CAD system. Based on the process plan, the operator creates a part program, which specifies operations of tools and a CNC machine tool, in a certain code format (G-code) through the CAD system or a manual operation. The CNC controller controls operations of the machine tool in response to an inputted G-code type part program so that an initial raw material can be machined into a product with a desired shape.
The G-code is a kind of machine language that expresses an operation of a machine tool as the position, speed and the like of a tool or a feed shaft, and is most generally used in the form of a part program. However, since the G-code supports only linear motions (G01) and circular motions (G02 and G03) of the feed shaft, high quality machining is difficult. Further, since the G-code does not have geometric information of a product, it is not suitable for five-axis machining or high speed machining.
Further, since the G-code does not have a variety of information related to a process, machining conditions optimized through actual machining cannot be fed back to CAD/CAM. Furthermore, since each machine tool manufacturer has a different G-code system, it is difficult to exchange data between different systems, and thus, additional post-processing is needed to exchange data.
Recently, a STEP-NC language based on a STEP (STandard for the Exchange of Product Model data) data model is spotlighted as a new programming language to solve the problems. The STEP-NC language defines process plan information capable of creating axial motions, such as feature information, machining sequences, machining methods and tool information, instead of directly specifying the axial motions. Therefore, high quality machining can be achieved, and machining information can be bi-directionally exchanged on a CAD-CAM-CNC process chain. Further, since the STEP-NC language is an international standard language neutral to a CNC controller, there is an advantage in that post-processing for compatibility is not required.
At present, the STEP-NC controller that analyzes a part program prepared with such a STEP-NC language and then directly creates axial motions is almost put to practical use. When the STEP-NC controller is newly applied to industrial fields in the future, a user will suffer from troubles of converting numerous programs, which have been previously prepared with the G-code, into STEP-NC programs. Thus, it is a high possibility that incompatibility between the G-code and the STEP-NC program will be an obstacle to expanding the use of the STEP-NC controller.

Transformation method of G-code into step-Nc part program


Cyclic dinucleotides are described, which in contrast to their natural congeners carry lipophilic nucleobases and have higher membrane permeability and increased biological activity.

Immunotherapy is a rapidly expanding medical research field, wherein the immune system of a patient is activated, deactivated or otherwise modulated, in order to achieve a therapeutic benefit. Immunotherapeutic concepts include cells, antigens, antibodies, nucleic acids, peptides, proteins, naturally present ligands or synthetic molecules. Cytokines are small glycoproteins, which modulate the immune response via complex signalling cascades. However, for multiple reasons a direct therapeutic application of cytokines is rather limited, among others, due to their short half-life in the blood, which would lead to rather short therapeutic intervals and to high doses in cytokines.

Cyclic dinucleotides containing benzimidazole, method for the production of same, and use of same to activate stimulator of interferon genes (sting)-dependent signaling pathways

BIOLOG LIFE SCIENCE INSTITUTE GMBH & CO. KG


An orthosis includes a first portion and a second portion configured to attach on opposite sides of a joint. An actuator is configured to apply a force between the first and second portions. The actuator includes a first spool and a second spool rotatably mounted to the first portion. An output pulley is mounted to the second portion. A belt has a first end wrapped around the first spool, a second end wrapped around the second spool, and a mid-portion wrapped around the output pulley. The actuator is configured to rotate the first and second spools. The rotation of the first spool pulls the belt a given length, and the rotation of the second spool feeds the belt less than the given length, so as to pull the output pulley towards the first portion to pull the second portion towards the first portion.

Wearable active orthotic devices can be used to amplify the residual intention to extend or flex a joint of patients recovering from neuromuscular deficiencies arising from conditions including stroke, traumatic brain injury and multiple sclerosis, or patients recovering from complex orthopedic injuries. Such orthotic devices can be attached across various joints to which movement assistance is provided, such as across a knee, elbow or ankle. The active orthotic device typically has a first portion that attaches to the patient on one side of the joint, a second portion that attaches on the other side of the joint, and an actuator that movably couples the first and second orthotic portions to provide force(s) to assist with movement of the joint. For example, in a knee augmentation device, the first portion is attached around the thigh and the second portion is attached around the calf. The intention to extend the joint may be sensed by a foot pressure sensor.
Considerable force may be required when assisting a joint such as the knee or elbow. The requirements for the actuator are difficult to provide in a compact, lightweight, battery-operated, wearable device.
Many assistive devices use actuators in which a motor is coupled to a lead screw, which may be an Acme screw or ball screw. The lead screw provides both a rotary to linear motion transformation as well as a gear reduction. It may take 10's of rotations of the ball screw to flex the joint less than 180 degrees, thereby providing an effective gear ration that may typically fall in the range of 20:1 to 100:1. The total ratio to the motor may be further increased by using a gear reduction or pulley coupling with different diameter pulleys. The use of a ball screw can meet the basic requirements, but has several disadvantages. The stroke of a ball screw is determined by the length of the screw and the size of the actuator cannot be reduced beyond the length necessary to supply the stroke required to link with the orthotic device. If the linkage is changed to provide the same range of motion with a shorter stroke, the force of the linear actuator must be increased and that may exceed the strength of the screw or available torque of the driving motor.
Other actuators have a difficult time meeting the output torque requirements while keeping size and weight low. If the actuator uses direct gearing, such as planetary gears, spur gears, or harmonic drive, the final gear must supply the entire torque and requires a large, heavy gear. Direct gearing also does not have a mode in which the drive mechanism is completely decoupled from the output linkage. Such decoupling is highly desirable for rehabilitation robotics in which the patient should be allowed free swing of the leg or arm in between the times when the powered assistance lifts, supports and/or assists the patient. Further, direct drive has a single gear ratio. In powered assistance of the knee, smaller motors can be used if the drive mechanism has different drive ratios to accommodate the need for high torque (for sit-to-stand or stair ascent) when the knee is bent near 90 degrees, and to provide higher speed (with less torque) for fast walking when the knee is nearly straight.
What would be desirable, but is not provided by the prior art, is an actuator that obtains high force without ball screws or large output gears, allows free movement of a patient when no movement assistance is desired, and varies the drive ratio during the stroke.


A functional sheet is brought into intimate contact with a front surface of a plasma display panel, and the functional sheet has a structure in which heat diffusion is superior to heat insulation between the plasma display panel and outside air. In addition, a display device includes a controller for controlling a drive voltage pulse train so that power consumption in a unit area in a light emission region within the screen is limited under a set value when one image is displayed.

1. Field of the Invention
The present invention relates to a display device having a display panel device including a plasma display panel and a functional sheet that is brought into intimate contact with a front surface of the plasma display panel.
2. Description of the Prior Art
Technology development of a plasma display panel (PDP) that is a self-luminous device is directed to a large screen for providing more powerful display. One of the important tasks for a large screen is weight reduction of the panel.
In general, a display device including a plasma display panel has a rigid filter plate having a base of a tempered glass. This filter plate is arranged in front of the plasma display panel with air gap. The filter plate has various functions of adjusting a display color optically, preventing reflection of external light, shielding electromagnetic waves, and shielding near infrared rays concerning displaying operation, and it also has a function of protecting the plasma display panel mechanically.
Arranging the filter plate in front of the plasma display panel is effective for reducing temperature rise in a filter layer due to heat generated in the plasma display panel. Air between the plasma display panel and the filter plate works as a thermal insulator. However, there is a drawback that the heat generated in the plasma display panel may be shut inside an enclosure of the display device, which causes temperature rise of the plasma display panel.
When the plasma display panel becomes high temperature, misdischarge may occur easily. In order to prevent misdischarge, it is necessary to set an upper limit of supplied power to a lower value or to provide a thermal countermeasure such as a high power cooling fan. As quantity of generated heat increases along with the screen size becoming larger, an appropriate thermal countermeasure has to be conducted.
In addition, as the filter plate has a large weight, it is not desired for a large screen of the plasma display panel. In order to reduce a weight of the display device, another structure is suitable in which a thin filter having a base of a resin film is glued directly on the front face of the plasma display panel instead of attaching the filter plate. Japanese unexamined patent publication 2001-343898 discloses a front filter that includes a transparent conductive film for a measure against EMI and a anti-reflection film that is glued on the front side of the front filter.
When a filter is glued on the front surface of the plasma display panel, the filter is apt to be deteriorated due to heat generated by the plasma display panel. As the front surface of the plasma display panel is covered with the filter, heat radiation of the plasma display panel may be impaired. In the conventional structure, however, there was no countermeasure against heat for both the filter and the plasma display panel in a display device in which the filter and the plasma display panel are brought into intimate contact with each other.


A hollow molded article including a polyolefin resin-based layer (A), a modified polyolefin resin-based layer (B) and a fluororesin-based layer (C), wherein the fluororesin-based layer (C) constitutes at least one of the innermost and outermost layers of the hollow molded article.

Fluoropolymers are excellent in heat resistance, chemical resistance, weathering resistance, surface characteristics (low frictional characteristics etc.) and electrical insulating properties thereof and, therefore, have so far been in various fields of application.
On the other hand, fluoropolymers are generally insufficient in mechanical strength and dimensional stability and are expensive from the cost viewpoint.
Therefore, various investigations have been made concerning adhesion or lamination between a fluoropolymer and other organic materials or adhesion or lamination between a fluoropolymer and an inorganic material in order to make the best use of the advantageous features of fluoropolymers and minimize the drawbacks thereof.
As regards fluoropolymer laminates, laminated structures comprising a functional group-containing fluoropolymer and a fluorine-free thermoplastic resin, for example a polyamide resin or a modified polyolefin resin, have been proposed (cf. e.g. Patent Document 1: International Publication WO 98/55557).
However, there are problems; for example, when such a polyamide resin or modified polyolefin resin, which is expensive, is used as a main constituent in the laminated structure, a cost of the laminated molded article as a whole rises and, when a modified polyolefin resin, which generally contains reactive functional groups, is used as the outermost layer, the environment resistance of the laminated molded article decreases.


The present invention provides a method and apparatus for modifying process selectivities based on process state information. The method includes accessing process state information associated with at least one material removal process, determining at least one selectivity based on the process state information, and modifying at least one process parameter of said material removal process based on said at least one determined selectivity.

1. Field of the Invention
This invention relates generally to semiconductor fabrication, and, more particularly, to modifying process selectivities based on process state information.
2. Description of the Related Art
Chemical and/or mechanical techniques may be used to remove material from wafers during semiconductor processing. For example, etching techniques may be used to remove selected portions of one or more layers deposited above a substrate to form structures, such as gates, vias, trenches, and the like. For another example, chemical mechanical polishing techniques may be used to polish and/or planarize a surface of a layer deposited above the substrate. The rate at which the chemical and/or mechanical techniques remove material typically depends on parameters associated with the removal technique. For example, etching rates may depend on parameters such as the concentration and/or composition of the etchant, the ambient temperature and/or pressure, and the like. For another example, chemical mechanical polishing rates may depend on the concentration and/or pH of the slurry compound, a spin rate of a platen, and the like.
Material removal rates also depend upon the chemical composition of the material being removed. For example, an etching technique may remove silicon dioxide at a first rate and the same etching technique may remove silicon nitride at a second rate that is about 10 times slower than the first rate. The relative rate at which a given technique removes different materials is commonly referred to as the "selectivity" of the technique. For example, the selectivity of the etching technique described above to silicon dioxide and silicon nitride is about 10:1. Selecting an appropriate selectivity may substantially improve processing of a semiconductor wafer. For example, when a silicon dioxide layer is being etched, overetching of a silicon nitride layer that is formed beneath the silicon dioxide layer may be reduced by using an etchant that has a relatively large silicon-dioxide-to-silicon-nitride selectivity.
The selectivity of a material removal technique, such as etching or chemical mechanical polishing, is usually determined based on wafer state measurements. For example, a silicon dioxide layer may be deposited above a wafer and polished using a chemical mechanical polishing technique. Before and after thicknesses of the silicon dioxide layer may be determined using metrology and used to determine the silicon dioxide removal rate for the chemical mechanical polishing technique. A silicon nitride layer may be deposited above another wafer and polished using the same chemical mechanical polishing technique. Before and after thicknesses of the silicon nitride layer can be used to determine the silicon nitride removal rate for the chemical mechanical polishing technique. The silicon dioxide and silicon nitride removal rates may then be combined to determine the selectivity of the chemical mechanical polishing technique.
Conventional techniques for determining selectivities using wafer state measurements are time-consuming and reduce the throughput of the semiconductor fabrication facility. One method for improving the efficiency of conventional selectivity determination techniques uses process state sensors to identify process endpoints where selectivities are more likely to change. For example, optical emission spectroscopy may be used to detect an endpoint of an etching or chemical mechanical polishing process. Once the endpoint has been reached, the selectivity may be determined using the conventional multi-wafer process described above. However, these selectivity determination techniques may still reduce the throughput of the semiconductor fabrication facility.
The present invention is directed to addressing the effects of one or more of the problems set forth above.

Method and apparatus for modifying process selectivities based on process state information


An Al-Zn-Si base alloy coat including an Al-Zn-Si-Fe alloy layer which has remarkable high corrosion resistance is formed on an article. A ferrous base material is used as the article to provide Fe to the alloy layer. The alloy layer of the present invention consists of 55 to 65 wt % of Al, 25 to 35 wt % of Zn, 5 to 10 wt % of Fe, and 2 to 4 wt % of Si, and also has a cross sectional area of 15 to 90% of the entire cross sectional area of the alloy coat. A process for forming the alloy coat of the present invention comprises the step of dipping the article into a molten bath of Zn to form, on the article, an undercoat which results from a reaction between Fe of the article and Zn in the molten bath, and then dipping the undercoat into an alloy molten bath of Al, Zn and Si to form the alloy coat of the present invention on the undercoat.

1. Field of the Invention
The present invention is directed to an alloy coated product with an Al-Zn-Si base alloy coat including an Al-Zn-Fe-Si alloy layer and a method for making the same.
2. Description of the Prior Art
A zinc coating is generally used to provide corrosion resistance to a ferrous-base material. However, higher corrosion resistance is required to use the ferrous material in severe corrosive environments, e.g., a salt spray area such as a seaside, an area having acid rain. From this point of view, many kinds of Al-Zn alloy coats were developed. The demands of the Al-Zn alloy coats are increasing because the Al-Zn alloy coats has superior corrosion resistance than the Zn coat. Japanese Patent Publication [KOKOKU]No. 63-63626 describes a steel wire coated with an Al-Zn alloy containing 3 to 10 wt % of Al. Suzuki et al. Japanese patent early publication [KOKAI]No. 1-263255 also describes a method of Al-Zn alloy coating, which includes the steps of dipping an article into a molten bath of Zn at a bath temperature in a range of 480.degree. to 560.degree. C. to form an undercoat on the article, and subsequently dipping the undercoat into an alloy molten bath containing at least 1 wt % of Al at a bath temperature in a range of 390.degree. to 460.degree. C. to form an Zn-Al alloy coat on the undercoat. The alloy molten bath preferably includes 0.1 to 10 wt % of Al. In case of an Al content less than 0.1%, the desired effect of Al, which is to greatly enhance corrosion resistance of the alloy coat, is not obtained. On the other hand, when the alloy molten bath includes more than 10 wt % of Al, a typical ferrous metal bath container and the article are harmfully attached by the molten metals of the alloy molten bath. However, when we think about a corrosion protective coat used under more severe corrosive conditions in the future, an alloy coat having superior corrosion resistance as compared with the Zn-Al alloy coat will be requested.


A zoom lens including, along an optical axis and in order from an object space to an image space: first lens group with negative power; an aperture stop; a second lens group with positive power; a third lens group with positive power; and a fourth lens group. The second and third lens groups and the aperture stop are axially movable for zooming. At least one lens element in the first lens group is moveable to provide for focusing. The aperture stop moves independently of the lens groups during zooming and has a clear aperture that changes size during zooming.

Contemporary zoom lens power configurations normally have an optical axis and are commonly based on a negative (−) and positive (+) combination of lens groups to provide zooming which are usually, but not always, preceded by a positive (+) lens group which provides focusing and following those lens groups a positive (+) lens group is employed to converge the radiation to a sensor in image space.
This arrangement of negative and positive optical powers in the zooming portion has a possible disadvantage of making the first positive lens group large in diameter, weight and cost especially where wide fields of view and focusing is required and in particular where focus breathing is controlled during focusing.
This arrangement may cause the first positive lens group to typically require the use of several lens elements, perhaps even up to 7 lens elements or more, which may contribute about 50% of the weight of the entire optical system and whose optical materials may contribute about 50% of the cost of all the optical materials employed in the entire optical system.
Thus, it is highly desirable to minimize the diameter, weight and corresponding cost of the first lens group of the optical system.

Zoom lens with forward-located aperture stop


A ball-and-socket joint for a motor vehicle, especially for the chassis of the motor vehicle has a ball-and-socket joint housing (i), which has a joint opening and in which a bearing shell (5) made of an insulating material is arranged. A ball pivot (4) is made of an electrically conductive material and has a joint ball (2) and a pivot (3) mounted rotatably and pivotably with its joint ball (2) in the bearing shell (5) and protrudes with its pivot (3) from the ball-and-socket joint housing (1) through the joint opening. An electrode (14) is arranged in the wall (12) of the bearing shell (5) at a spaced location from the joint ball (2), and the electrode (14) and the joint ball (2) are electrically insulated against each other via the bearing shell (5).

Such a ball-and-socket joint is described in the German patent application DE 100 09 054.0, where the ball-and-socket joint housing made of an electrically conductive material is connected via electric lines to an evaluating unit, by means of which excessive wear of the bearing shell, which is characterized by the direct contact of the joint ball with the ball-and-socket joint housing, can be detected.
DE 199 18 869 A1 discloses a ball-and-socket joint for vehicle steering knuckles, which has a joint housing and a joint pin, which is mounted rotatably and deflectably in a two-part bearing shell made preferably from a polymeric material by means of a spherical bearing surface, wherein the bearing shell itself is arranged in the joint housing. A wear indicator insert, which protrudes from the sealing washer in the nonworn state of the ball-and-socket joint on the side of the sealing washer facing away from the bearing shell, is inserted into a sealing washer fixed in the housing under pretension against the bearing shell. This pretension decreases with increasing wear of the ball-and-socket joint, so that the wear indicator insert can be moved by an operator and can be pressed into the sealing washer from the side of the sealing washer facing away from the bearing shell. When the wear indicator insert can be moved or pressed into the sealing washer to the extent that it no longer protrudes from the sealing washer on the side of the sealing washer facing away from the bearing shell, this indicates that the ball-and-socket joint is worn.