A biaxial hinge which allows a first casing having a keyboard and a second casing having a display to open and close 360 degrees relative to each other. The biaxial hinge ensures that the keyboard, rubber feet, and other parts can sink relative to the first casing. The biaxial hinge includes a biaxial hinge portion and an actuating mechanism. The biaxial hinge portion includes a rotation controlling unit. The actuating mechanism includes a fixed cam part, a slide cam part facing the fixed cam part, and a link part.

The invention relates to a biaxial hinge of an electronic device such as a notebook PC, which couples a first casing with a keyboard portion and a second casing with a display portion such that these casings can open and close 360 degrees relative to each other; and the biaxial hinge is particularly suitably used in a tablet notebook PC, wherein its display portion has a touch operation function as well. The invention also relates to an electronic device using such a biaxial hinge, as a tablet notebook PC.
A PC, in which a first casing with a keyboard portion and a second casing with a display portion enabling touch operation function using hand can open and close 360 degrees relative to each other using a biaxial hinge, is called tablet notebook PC in general. The biaxial hinge for the tablet notebook PC of this type, in which the first casing and the second casing as described above can open and close 360 degrees relative to each other, is made known by JP Laid-Open Patent Application No. 2009-063039. However, in such tablet notebook PC, a user may use it as an ordinary notebook PC by inputting using the keyboard portion provided on the first casing, when the second casing is opened relative to the first casing, but it can be also put on a table such as desk, the first casing and the second casing having rotated 360 degrees relative to each other to a folded state, and input is made on the display portion by means of touching operation using his hand. Sometimes, the first casing and the second casing are folded relative to each other into the shape substantially of the letter L, so that the tablet PC is operated by touching operation with an underlying keyboard portion. In these cases, when an electronic device is used in a folded state and the keyboard portion provided on the first casing still protrudes from the upper surface of the first casing, a contact of the keyboard portion with a surface of the table results in erroneous operations, which is problematic. Or otherwise, when rubber feet are provided on the lower surface of the first casing, these rubber feet touch the backside of the second casing, so that the two casings cannot be folded to a horizontal position, which is again problematic. However, conventional biaxial hinges cannot solve the above-mentioned problems.
Therefore, the present applicant proposed in his previous patent application (JP Patent Application No. 2014-210298) a biaxial hinge of an electronic device, such as tablet notebook PC, which couples a first casing and a second casing, such that these casings can open and close 360 degrees relative to each other, wherein the biaxial hinge comprises a biaxial hinge portion provided with a means for controlling rotation, which ensures that a first shaft attached to the first casing via a first attaching plate and a second hinge shaft attached to the second casing via a second attaching plate are rotatable in parallel to each other via a plurality of joint members, as well as controls the rotation of the both hinge shafts. The biaxial hinge further comprises an actuating mechanism actuating an operation means working on a keyboard, rubber feet and others provided on the first casing. However, a complex structure of the above-mentioned actuating mechanism results in increased costs, so that a further cost reduction is required.

Biaxial hinge and electronic device using the same


Systems and methods for multiple device diagnostics are disclosed herein. Exemplary embodiments provide for a multiple device diagnostic system having a plurality of electronic devices selected for diagnosis based on at least one selection criterion, a diagnosis engine in data communication with a failure database, and a diagnosis results database in data communication with the diagnosis engine. Embodiments further provide that the failure database contains grouped failure data from at least one previously diagnosed electronic device, that the wherein the processor diagnoses defects in one or more of the plurality of electronic devices using the grouped failure data, and that the processor outputs the diagnosis results to the diagnosis results database.

The manufacture of any device, including electronic devices, may occasionally produce defective articles. This is true for the mass manufacture of electronic devices, such as integrated circuits. Any such electronic devices may contain manufacturing defects, and accordingly the diagnosis of such flaws is a necessary part of any manufacturing operation.
Diagnosing errors in manufactured articles may be a time-consuming and labor-intensive process. The small scale and delicate nature of electronic devices and their components frequently precludes visual inspection. Instead, testing may be automated and performed by supplying a known input or instruction to a device and determining whether the expected output is received or the expected function is performed. Even automated testing processes may be unable to individually test mass produced electronic devices and diagnose flaws in a feasible manner. Accordingly, methods of multiple device diagnoses ("MDD") have been developed to diagnose flaws in multiple devices at the same time, examples of which are described in U.S. Pat. No. 9,400,311, the contents of which are incorporated herein by reference.
Automated testing has a number of requirements, including the need to identify potential defects, specify test procedures, and correctly interpret the results to accurately diagnose defects, all of which require time, effort, and resources. There are numerous ways that an electronic device may be defective, however, and this problem may be compounded by the quantity of electronic devices produced by mass manufacturing. Further, performing the automated testing of multiple devices to detect flaws consumes personnel and system resources, and may often demand a significant memory footprint and significant run time. As a result, automated testing may be parallelized to more quickly obtain diagnosis results. Nonetheless, continually increasing design sizes and the addition of technology nodes to the devices reduces the number of diagnosis jobs that can be performed with without continually increasing the hardware employed.
Accordingly, there is a need to efficiently identify defects in electronic devices and efficiently diagnose defects in multiple devices.

System and method for multiple device diagnostics and failure grouping


Provided is a method of manufacturing a flash memory device. In the method, after forming a cell string and source/drain selection transistors, it forms a first oxide film in which a sidewall oxide film and a buffering oxide film are stacked, a nitride film, and a second oxide film for spacer on the overall structure. Then, source/drain contact holes are formed. Thus, the source/drain selection transistors are prevented from being exposed while etching the source/drain contact holes, which enhances the reliability of the flash memory device.

1. Field of the Invention
The present invention relates to a method of manufacturing a flash memory device and specifically, to a method of manufacturing a flash memory device, which improves the reliability of the flash memory device by preventing source/drain selection transistors from being exposed while forming source/drain contacts.
2. Discussion of Related Art
In a NAND-type flash memory device, pluralities of transistors are arranged between drain contacts, those of which functions as drain selection transistors, and pluralities of transistors are arranged between source contacts, those of which functions as source selection transistors. And, pluralities of memory cells, e.g., 16, 32, or 64 memory cells are serially connected between the drain selection transistor and the source selection transistor, the construction of which forms a cell string. Here, while distances between memory cells of the cell string are same to each other, a distance between a memory cell and an adjacent drain or source selection transistor is designed to be wider than the distance between the memory cells on basis of the characteristics of the transistors.
FIGS. 1A through 1D are sectional diagrams illustrating sequential processing steps by a conventional method of manufacturing a flash memory device.
Referring to FIG. 1A, source/drain selection transistors 12 and a cell string 11 having plural memory cells are formed in a predetermined region over a semiconductor substrate 101. Here, a single memory cell is constructed of a tunnel oxide film 102, a floating gate 103, a dielectric film 104, and a control gate 105, those being stacked over the semiconductor substrate 101. Meantime, each of the source/drain selection transistors 12 is constructed of a gate oxide film 106 and a gate 107 that are stacked therein.
Referring to FIG. 1B, after depositing an oxide film 108 on the overall structure by means of a chemical vapor deposition (CVD) process, spacers are formed on sidewalls of the source/drain selection transistors 12 by conducting an etch-back process for the entire surface of the overall structure. The etching process for forming the spacers is carried out to completely disclose the semiconductor substrate 101 between the source/drain selection transistors 12. And then, a nitride film 109 is deposited on the overall structure, which is directed to prevent side damages on the source/drain selection transistors 12 during an etching process for forming source/drain contacts.
Referring to FIG. 1C, after forming an interlevel insulation film 110 on the overall structure, source/drain contacts 111 are formed by way of a lithography and etching process using a source/drain contact mask. However, if the etching process is conducted to completely disclose the semiconductor substrate 101 between the source/drain selection transistors 12, the nitride film 109 on the sidewalls of the source/drain selection transistors 12 is damaged to disclose the spacers, which causes the source/drain selection transistors 12 to be disclosed during the subsequent wet etching process.
Referring to FIG. 1D, a metal layer is deposited to fill up the source/drain contacts 111, forming plugs 112. Thus, the source/drain selection transistors 12 preliminarily disclosed are shorted to the plugs 112, which degrades the reliability of the flash memory device.

Method of manufacturing a flash memory device


A pole ascension apparatus and associated method are disclosed. According to one embodiment, the apparatus includes a track connected to a pole and a portable platform portion detachably connectable to the track. The portable platform portion may move upwardly and downwardly along the track.

The present invention is directed generally to various embodiments of ascension/descension apparatuses and methods.
Telephone service technicians are often required to climb telephone poles in order to make the necessary repairs. As most telephone poles are wooden, it is common for telephone service technicians to use spiked shoes (often referred to as "gaffs") in order to provide the necessary traction to scale the vertical pole. Such shoes, however, often put unnecessary stress on the technician's leg and foot joints.
It can be appreciated that commercial entities and other organizations that employ workers in elevated environments are aware of the potential risks attendant upon work performed in such environments. In view of this awareness, commercial entities and other organizations devote time and resources to promoting the safety of workers performing work in elevated environments to make the performance of work as safe as possible. Promoting safety of workers in elevated environments may involve instituting training programs and/or providing workers with a variety of support devices, support systems, backup devices and systems, and/or other means that promote the stability and safety of workers in elevated environments. Despite the best efforts of an organization to enhance the safety of its workers and reduce the risk of falling from elevated structures, for example, it is nonetheless difficult to eliminate all risks to workers performing work on such elevated structures.
Redundant systems for promoting safety of workers on elevated utility structures may thus sometimes be used. Such redundant systems can sometimes be beneficial in addition to the myriad of existing support systems, methods, devices and/or other apparatus employed by workers on elevated structures to reduce or mitigate risks associated with falling from utility structures, for example.

Ascension/descension apparatus and method

Bell South Intellectual Property Corporation


A semiconductor device includes a laminated layer structure including at least one semiconductor layer disposed on a first conductivity type semiconductor substrate, a semi-insulating semiconductor layer disposed on the semiconductor laminated layer structure, a second conductivity type semiconductor region disposed on the front surface of the semi-insulating semiconductor layer, a first electrode on the rear surface of the substrate, and a second electrode disposed on the semi-insulating semiconductor layer and in ohmic contact with the second conductivity type semiconductor region. The junction of the semi-insulating semiconductor layer and the second conductivity type semiconductor region does not form a pn junction, the second conductivity type semiconductor region is surrounded by the semi-insulating material, and the leakage current is suppressed so that, without increasing the dark current, the size of the light responsive region can be made close to the size of an incident light spot, and the pn junction capacitance can be reduced while reducing the pn junction area, resulting in a semiconductor device operating at high speed.

FIG. 20 is a cross-sectional view illustrating a prior art pin photodiode (hereinafter referred to as pin PD) provided with an InGaAs light absorbing layer according to the prior art. In FIG. 20, reference numeral 1 designates a high dopant concentration n type (hereinafter referred to as n.sup.+ -) InP substrate including an n type dopant impurity, such as S (sulfur) or Si (silicon), in a concentration of 1.times.10.sup.18 cm.sup.-3 and having a thickness of 200 .mu.m. Reference numeral 2 designates an n type (hereinafter referred to as n-) InP buffer layer including an n type dopant impurity in a concentration of 1.times.10.sup.17 cm.sup.-3 and having a thickness of about 1 .mu.m. Reference numeral 3 designates a low dopant concentration n type (hereinafter referred to as n.sup.- -) InGaAs light absorbing layer including an n type dopant impurity in a concentration of 1.times.10.sup.15 cm.sup.-3 and having a thickness of about 3 .mu.m. Reference numeral 4 designates an n.sup.- -InP window layer including an n type dopant impurity in a concentration of 1.times.10.sup.14 .about.1.times.10.sup.15 cm.sup.-3 and having a thickness of about 2 .mu.m. Reference numeral 5 designates a p type region having a circular surface formed by Zn diffusion with its diameter of about 60 .mu.m and having a dopant concentration of 1.times.10.sup.17 cm.sup.-3 .about.1.times.10.sup.20 cm.sup.-3. Reference numeral 6 designates a p type (hereinafter referred to as p-) InGaAs contact layer including a p type dopant impurity to a concentration of 1.times.10.sup.19 cm.sup.-3 and having a thickness of about 0.2 .mu.m. The contact layer has an annular surface with an internal diameter of about 50 .mu.m and a width of about 5 .mu.m, and the center of the annular surface is positioned at the center of the circular p type region. Reference numeral 7 designates a reflection preventing film (passivation film) comprising such as SiN and having a thickness of about 1500 .ANG., disposed on the n.sup.- InP window layer 4 other than the region where the contact layer 6 is formed. Reference numeral 8 designates a p side electrode disposed on the contact layer 6, and a portion thereof extending onto a region where the contact layer 6 is not present. The extended portion provides a bonding pad region B which is used for wire bonding. Reference numeral 9 designates an insulating film such as SiO.sub.2 having a thickness of about 4000 .ANG. and disposed between the bonding pad region B of the p side electrode 8 and the reflection preventing film 7. Reference numeral 10 designates an n side electrode provided on the rear surface of the substrate 1. In addition, character L denotes a distance between the outer contour of the InGaAs contact layer 6 and the outer contour of the Zn diffusion region 5 at the surface of the window layer 4. Reference numeral 5a designates a light responsive region.
A description is given of the operation of the prior art pin PD. First of all, when a reverse bias current flows so that the p side electrode 8 becomes minus and the n side electrode 10 becomes plus, a depletion layer is formed from the pn junction plane between the p type region 5 and the n.sup.- -InGaAs light absorbing layer 3 toward the direction of the n.sup.+ -InP substrate 1. Then, when the light is applied at the front surface of the n.sup.- -InP window layer 4 to the n.sup.- -InGaAs light absorbing layer 3 in the depletion layer, carriers are excited in the n.sup.- -InGaAs light absorbing layer 3, and a photoelectric current flows in accordance with the quantity of incident light.
The prior art InGaAs-pin PD has two problems because the window layer 4 comprises n.sup.- -InP. First, a bonding pad capacitance is produced between the bonding pad region B of the electrode 8 and the lower surface of the depletion layer that is generated at the upper portion of the window layer 4 when the reverse bias is applied, and this capacitance is determined by the sum of the capacitance of the insulating film, such as the SiN reflection preventing film 7 formed on the surface of the window layer 4, and the capacitance of the depletion layer. Usually in the PD, since a reduction in the capacitance of the device enhances the high-speed response of the device, the device has an insulating film 9 such as SiO.sub.2 between the window layer 4 and the bonding pad region B of the electrode 8, which insulating film 9 is as thick as possible, to reduce the bonding pad capacitance. However, since there is a limitation in providing such an insulating film 9, it is impossible to reduce the bonding pad capacitance easily.
Second, in order to reduce the capacitance of the pin PD, the diffusion radius of the p type region 5 forming the pn junction capacitance with the n type semiconductor layer is made closer to the light responsive radius of the light responsive region 5a, and the pn junction area is made small. However, when the distance L is shortened, the dark current increases with an increase in the leakage current flowing at the interface between the reflection preventing film 7 and the window layer 4 through the contact layer 6 from the p side electrode 8. Therefore, it is impossible to minimize the diffusion radius of the p type region 5, and it is impossible to reduce the pn junction capacitance. Because of these two problems in the prior art pin PD, there is a limitation in reducing the device capacitance, and it is difficult to realize high-speed operation of the device.
FIG. 21 is a cross-sectional view illustrating an avalanche photodiode (hereinafter referred to as APD) provided with the InGaAs light absorbing layer according to the prior art. In FIG. 21, the same reference numerals as in FIG. 20 designate the same or corresponding parts. Reference numeral 25 designates an n-type hole accumulation prevention layer comprising n type InGaAsP including an n type dopant impurity in a concentration of 1.times.10.sup.15 cm.sup.-3 and having a thickness of about 0.2 .mu.m, and disposed so that the holes generated in the light absorbing layer 3 easily move toward the p type region 5. Reference numeral 11 designates an n-InP multiplication layer including an n type dopant impurity in a concentration of 2.times.10.sup.16 cm.sup.-3 and having a thickness of about 1 .mu.m. Reference numeral 14 designates an n.sup.- -InP window layer including an n type dopant impurity in, a concentration of 1.times.10.sup.15 cm.sup.-3 and having a thickness of about 1 .mu.m. Reference numeral 24 designates a guard ring region formed by ion implantation of Be.
A description is given of the operation of the prior art APD. First of all, when a reverse bias current flows so that the p side electrode 8 becomes minus and the n side electrode 10 becomes plus, a depletion layer having a depth reaching the n.sup.- -InGaAs light absorbing layer 3 is formed from the pn junction plane between the p type region 5 and the n-InP multiplication layer 11 toward the direction of the n.sup.+ -InP substrate 1. Then, when light is applied from the surface of the n.sup.- -InP window layer 4 to the n.sup.- -InGaAs light absorbing layer 3 in the depletion layer, the carriers are excited by the n.sup.- -InGaAs light absorbing layer 3, and the carriers are multiplied by the avalanche phenomenon, thereby producing a photoelectric current in accordance with the quantity of the incident light.
The p type region formed by diffusion of Zn atoms usually forms a stepwise pn junction, at the interface between the multiplication layer 11 and the p type region 5 and at the interface between the n.sup.- -InP window layer 14 and the p type region 5. At the edge part, i.e., the sidewall, of the p type region 5, the electric field is likely to be concentrated because the pn junction interface curved, and edge breakdown is likely to arise. In order to avoid the edge breakdown, in the usual APD, a guard ring region 24 having an inclined pn junction formed by a combination of Be ion implantation and annealing is provided in the vicinity of the edge part. That is, edge breakdown can be prevented by providing the inclined pn junction, which is unlikely to breakdown in place of the stepwise pn junction which is likely to breakdown.
However, since the annealing temperature in producing the guard ring region 24 is extreme, 600.degree..about.800.degree. C., dissociations and crystalline defects occur and increase the dark current, and the characteristics of the semiconductor element are degraded. Therefore, it is necessary to prevent dissociation that increases the dark current.
In addition, in the prior art APD, as in the above-described pin PD, since the bonding pad capacitance is not reduced, high-speed operation of the device is not realized.
FIG. 22 is a cross-sectional view illustrating a laser diode (hereinafter refereed to as LD) according to the prior art. In FIG. 22, reference numeral 51 designates an n.sup.+ -InP substrate including an n type dopant impurity, such as S or Si, in a concentration of 5.times.10.sup.18 cm.sup.-3. Reference numeral 52 designates an n-InP lower cladding layer including an n type dopant impurity in a concentration of 1.times.10.sup.18 cm.sup.-3. Reference numeral 53 designates a p-InP current blocking layer including a p type dopant impurity in a concentration of 1.times.10.sup.18 cm.sup.-3. Reference numeral 54 designates an n-InP current blocking layer including an n type dopant impurity in a concentration of 1.times.10.sup.17 cm.sup.-3. Reference numeral 55a designates a first p-InP upper cladding layer including a p type dopant impurity in a concentration of 1.times.10.sup.18 cm.sup.-3. Reference numeral 55b designates a second p-InP upper cladding layer including a p type dopant impurity in a concentration of 1.times.10.sup.18 cm.sup.-3. Reference numeral 56 designates an undoped InGaAs active layer. Reference numeral 57 designates an insulating film such as SiN. Reference numeral 58 designates a p side electrode, and reference numeral 50 designates an n side electrode.
Subsequently, a description is given of the method of fabricating the prior art LD. First of all, the lower cladding layer 52, the undoped InGaAs active layer 56, and the first upper cladding layer 55b are successively epitaxially grown on the substrate 51 by MOCVD as the first epitaxial growth step.
Next, a stripe-shaped insulating film (not shown) is formed on the first upper cladding layer 55b, and using this film as a mask, the etching is selectively performed to reach the lower cladding layer 52 from the surface of the first upper cladding layer 55b, to form a stripe-shaped mesa structure.
Further, using the stripe-shaped insulating film as a mask, the p-InP current blocking layers 53 and the n-InP current blocking layers 54 are successively epitaxially grown so as to bury the mesa structure at opposite sides thereof by MOCVD as the second epitaxial growth step. Then, after the removal of the insulating film, the second upper cladding layer 55b is formed on the mesa structure and the n-InP blocking layers 54 as the third epitaxial growth step. Further, an insulating film 57 having an aperture above the mesa structure is formed on the second upper cladding layer 55b, and the p side electrode 58 is formed on the second upper cladding layer 55b in the aperture and on the insulating film 57, and an n side electrode 50 is formed on the rear surface of the substrate 51, thereby producing a laser diode as shown in FIG. 22.
A description is given of the prior art LD. When a current flows so that the p side electrode 58 becomes plus and the n side electrode 50 becomes minus, the carriers injected from the respective electrodes reach the active layer 56 in the mesa structure, light emitting recombination of carriers occurs, the light is guided along the active layer 56, and the light is emitted as a laser beam. As for the carriers injected from the p side electrode 58 and the n side electrode 50, since the n-InP lower cladding layer 52, the p-InP current blocking layer 53, the n-InP current blocking layer 54, and the second p-InP upper cladding layer 55b are successively laminated to form a thyristor structure (pnpn structure), the carriers do not flow.
As described above, in the prior art LD, a mesa structure is formed as a structure confining the current, and the opposite sides of the mesa structure are buried by the p-InP current blocking layers 53 and the n-InP current blocking layers 54, and the second p-InP upper cladding layer 55b is disposed on the mesa structure and on the n-InP current blocking layers 54. However, in order to fabricate the LD having such a structure, it is necessary to perform three epitaxial growth processes, that is forming the mesa structure, burying the mesa structure, and forming the second p-InP upper cladding layer 55b. As a result, the fabricating processes become quite complicated, and the productivity is quite bad.
In the prior art semiconductor device such as a pin PD, since the window layer 4 comprises n.sup.- type InP, the bonding pad capacitance cannot be easily reduced, and there is a limitation in making the diffusion radius of light responsive region 5a of the p type region 5 causing a pn junction capacitance close to the radius of the light responsive region, whereby it is impossible to reduce the pn junction capacitance. As a result, it was difficult to realize the high-speed operation of the device.
In the prior art semiconductor device such as an APD, since the annealing temperature while forming the guard ring region 24 is extreme, 600.degree..about.800.degree. C., dissociations and crystalline defects occur and the dark current increases, whereby the characteristics of the semiconductor element are degraded. As a result, it is impossible to reduce the bonding pad capacitance, and it is difficult to realize high-speed operation of the device.
In addition, in the prior art semiconductor device such as an LD, since it is necessary to perform three epitaxial growth processes, that is forming the mesa structure, burying the mesa structure, and forming the second p-InP upper cladding layer 55b, the fabricating processes become quite complicated, and the productivity is quite bad.


Disclosed is a method for managing a socket to release the socket allocated to a call control processor (CCP), based upon a status of a target processor, in a radio network controller (RNC). The method of the present invention includes allocating a socket corresponding to a CCP in a plurality of target processors, communicating with the plurality of target processor using the allocated socket, and releasing the socket allocated to corresponding target processor based on the reception of the message.

1. Field of the Invention
The present invention relates to a mobile communication system, and more particularly, to a method for managing a socket allocated to a call control processor in a mobile communication system.
2. Description of the Related Art
A socket is used for transmitting data using a specific protocol between a server and a client. The communication between processors via the socket is based on a client-server model. A client processor can communicate with the server processor through the socket connection. For this, the client processor generates an undesignated socket and requests a connection with a socket designated by the server. Therefore, if the connection is successfully completed, each file descriptor is supplied to the server and the client, and both file descriptors can be used for reading and writing.
A general server processor first initializes itself, and then waits for a service request from a client. At this time, a specific port number is allocated by the server for receiving a request from the client. This port is monitored by the server processor. When the client transmits data to an address and a port of the server, the server shifts out of the waiting status so as to execute the requested service. If the requested service is an interlink type service, a linkage is established and maintained until the linkage is expressly cut off. Since bi-directional transmission is supported through the socket communication, when one socket is opened, both data transmission and reception can be simultaneously executed via the socket.
The above-described socket can be implemented by a mobile communication system using a TCP/IP to periodically manage a status of each process.
FIG. 1 is a diagram of a related art mobile communication system that performs call control processing. Referring to FIG. 1, the mobile communication system includes a Base Station Manager (BSM) 130, a Radio Network Controller (RNC) 100, and a plurality of Base Stations (BSs) 120a˜120n. The BSM 130 is used to manage radio resources in the RNC 100. The RNC 100 receives information from the plurality of BSs 120a˜120n. The RNC 100 provides the received information to a higher layer to a core network (not illustrated), and transmits information received from the higher layer to the plurality of the BSs 120a˜120n. The plurality of the BSs 120a˜120n provide the information received from the RNC 100 to a user, and transmit information inputted from the user to the RNC 100. The information may include voice data, character data, control commands, and the like.
The RNC 100 preferably includes a Call Control Processor (CCP) 110, a Service Control Processor (SCP) 112, a Switch Module Processor (SMP) 114, and a Vocoder Multi-channel Processor (VMP) 116. The CCP 110 is a main processor that controls a call processing of the RNC. The SCP 112 is a processor for managing a signal point, and executes connection management relating to a Number 7 signaling network. Moreover, the SMP 114 is a processor to control selectors in a mobile communication system, and may perform a function of selecting information received from the plurality of the BSs 120a˜120n. The VMP 116 is a processor for controlling a vocoder, which performs a function of decoding encoded voice data into PCM data in a mobile communication system.
The CCP 110, which is connected through a Board Support Package (BSP) 121 as a main processor in the plurality of BSs 120a˜120n and the socket, periodically controls the status of the BSP 121. Moreover, the CCP 110 is connected to SCP 112, SMP 114, and VMP 116 in the inner part of the RNC 100, and can control the status of each of the processors 112, 114, 116.
As described above, the CCP 110 requires numerous socket resources because it is connected to each of the processors 112, 114, 116, 121 (hereinafter, the plurality of target processors) and the socket, and has to control a status of each of the plurality of target processors.
FIG. 2 is a flow chart illustrating a related art method for monitoring a status of each processor using the socket. Referring to FIG. 2, the CCP 110 allocates a socket to each of the plurality of target processors 112, 114, 116, and 121, so as to periodically control the status of each of the plurality of target processors (Step 201). At this time, each of the plurality of target processors, as well as the socket allocated to the CCP, allocates its own socket for communicating with the CCP 110.
When the socket is allocated to each of the target processors, the CCP 110 may periodically receive a status message from the plurality of target processors. The CCP 110 reports the received status information to the BSM 130. Furthermore, the CCP 110 transmits its own status to each of the plurality of target processors using a message (Step 211). In this case, the CCP 110 transmits the status message in a prescribed form when the plurality of the target processors request a status message via the socket.
Accordingly, each processor's status is periodically communicated between the CCP 110 and the plurality of target processors based on the connection through the socket.
When communicating through the socket, the communication is executed by an application layer via the transport layer, and not via a network layer. Further the communication is performed in accordance with an Internet Protocol (IP). The IP allows for transmission of data packets between other networks according to the IP address and thus provides path control. IP is typically used with a Transmission Control Protocol (TCP) or a User Datagram Protocol (UDP), which are protocols included in the transmission layer. Because the CCP 110 utilizes the TCP/IP, it is necessary to allocate socket resources to each of the plurality of the target processor.
The socket can be classified into either a stream socket that utilizes TCP or a datagram socket that utilizes the UDP, according to the transmission protocol it utilizes. The UDP's main function is to designate ports of a receiving body and a sending body by a UDP header. The port is a number for discriminating the receiving body and the sending body through a service or a higher protocol in the inner portion of a host that has an IP address. The TCP, on the other hand, provides the port designating function, and further includes a transmission controlling function for controlling a communication sequence, answering back, re-transmission, data stream, urgent data, congestion and the like.
Referring again to FIG. 2, when a status message is received from one of the plurality of target processors, the CCP 110, may generate a status change command based on the status messages. The CCP 110 then transmits the status change command to the corresponding processor (Step 221). The corresponding processor is then able to change its status according to the status change command.
The related art socket management has numerous problems. For example, as described above, the status of other processors between the CCP and the plurality of target processors can be monitored by periodically exchanging the status thereof. However, in the related mobile communication system using the IP, numerous socket resources are required because the CCP must allocate a socket to each of the plurality of target processors to be communicated with.
Moreover, in the related CCP, if a socket is allocated to a processor that is not mounted or is not properly functioning, a socket is allocated to a target processor which should not be allocated. Accordingly, socket resources are wasted. Specifically, although the disconnected target processor is not monitored when disconnected communication occurs in the related CCP, the socket resource is not withdrawn.
Moreover, the status messages are continuously and repeatedly transmitted to the plurality of the target processors in the related art CCP, causing the loads in the CCP to be increased.
Additionally, when a socket is allocated to a processor which does not need to be communicated with or is continuously allocated for the transmission of a status message because the CCP fails to withdraw the allocated socket resources, call control processing may not be properly executed if the socket resource is not corrected or withdrawn.
The above references are incorporated by reference herein where appropriate for appropriate teachings of additional or alternative details, features and/or technical background.

Method for managing socket in mobile communication system


A hydraulic pressure compensation system for valve actuator assemblies is described having particular application for subsea wellhead installations. The compensation system includes at least one valve actuator assembly having a housing that retains a reciprocable piston therewithin. The piston is spring biased into its fail safe configuration. The valve actuator assembly is hydraulically associated with an accumulator reservoir that defines a closed fluid reservoir and an open fluid reservoir that is exposed to ambient pressures. The two chambers are separated by a membrane. The valve actuator assembly is also operationally associated with a fluid pressure intensifier that boosts the ambient pressure of the accumulator so that an increased fluid pressure may be transmitted to the actuator assembly to bias the actuated valve toward its fail safe configuration. In a described embodiment, the fluid pressure intensifier comprises a housing that defines a chamber having a fluid inlet and fluid outlet. A dual-headed piston is moveably retained within the housing. The piston has an enlarged piston face and a reduced size piston face. Fluid pressure entering the fluid inlet is exerted upon the enlarged piston face, and due to the difference of piston face sizes, an increased pressure is transmitted out of the fluid outlet.

1. Field of the Invention
The invention relates to actuator assemblies for the selective actuation of valves. In particular aspects, the invention relates to improved hydraulic pressure arrangements and fail safe systems for use in such assemblies.
2. Description of the Related Art
Gate valves and other sliding stem-type valves operate by selectively inserting a reciprocable stem into the flow of fluid to stop the flow when desired. Such valves assemblies are often used with subsea wellheads in order to control the flow of oil or gas from the wellhead. Conventional subsea actuator assemblies are used to selectively open and close valves in subsea Christmas trees, manifolds and other assemblies. Examples of such actuator assemblies are described in U.S. Pat. Nos. 4,311,297 and 4,650,151.
Subsea environments create special problems for the operation of such valves. In deep water production systems it is essential that the valves be made insensitive to ambient hydrostatic pressures. In other words, the operation of the valves should not be affected appreciably by the surrounding water pressure. Additionally, it is important that the valves incorporate a fail-safe feature that is intended to maintain the valve in a closed (or, if appropriate, open) position in the event of a loss of control pressure. In conventional designs, mechanical springs are used to bias the stem into the desired closed (or open) configuration. Such designs are often quite effective at shallow depths. However, difficulties arise when they are used at greater depths. Special problems are created by placement of wellheads in deep waters. The greater the water depth, the greater the spring force required to counteract the effects of hydrostatic head pressure on an unbalanced stem area. American Standard API 17D requires that this factor be taken into consideration when specifying the unit depth rating for a valve assembly. Other constraints, particularly those relating to the size and weight of subsea assemblies make it increasingly problematic to simply increase the mechanical spring force for greater depths.
Use of actuator assemblies that are totally sealed, i.e., the stem is sealed from hydraulic pressure, solves the problems of insensitivity and providing an adequate bias force upon the stem. However, the existence of such assemblies is not a complete solution. Completely sealed assemblies create problems when requirements for an independent rotary or linear override mechanisms are specified for the wellhead. In addition, completely sealed assemblies make provision for position indication difficult.
Improvements to the systems of the prior art would be desirable.

Subsea actuator assemblies and methods for extending the water depth capabilities of subsea actuator assemblies


Holes (40a) are formed with a laser beam through an insulating substrate (40) on which a metallic layer (42) is formed and via holes (36a) are formed by filling up the holes (40a) with a metal (46). After the via holes (36a) are formed, a conductor circuit (32a) is formed by etching the metallic layer (42) and a single-sided circuit board (30A) is formed by forming projecting conductors (38a) on the surfaces of the via holes (36a). The projecting conductors (38a) on the circuit board (30A) are put on the conductor circuit (32b) of another single-sided circuit board (30B) with adhesive layers (50) composed of an uncured resin in-between and heated and pressed against the circuit (32b). The projecting conductors (38a) get in the uncured resin by pushing aside the resin and are electrically connected to the circuit (32b). Since single-sided circuit boards (30A, 30B, 30C, and 30D) can be inspected for defective parts before the boards (30A, 30B, 30C, and 30D) are laminated upon one another, only defectless single-sided circuit can be used in the step of lamination.

1. Field of the Invention
The present invention relates to a single-sided circuit board and a manufacturing method therefor, and more particularly to a single-sided circuit board used for manufacture of a multilayer printed circuit board having an interstitial via hole (IVH) structure and a manufacturing method therefor.
2. Description of the Related Art
A conventional multilayer printed circuit board is constituted by a laminate obtained by alternately laminating copper-clad laminates and prepregs. The laminate has a surface on which a surface wiring pattern has been formed. Moreover, an internal wiring pattern is formed between interlayer insulating layers. Through holes are, by punching formed in the direction of the thickness of the laminate to establish the electric connections among internal wiring patterns or among internal wiring patterns and the surface wiring patterns.
The multilayer printed circuit board having the above-mentioned through hole structure must have regions for forming the through holes. Therefore, the density at which elements are mounted cannot be easily raised. As a result, there arises a problem in that the multilayer printed circuit board having the through hole structure cannot easily address needs for considerable reductions in the sizes of the portable electronic apparatuses, realizing narrow pitch packages and practical use of MCM.
As an alternative to the foregoing multilayer printed circuit board having the through hole structure, a multilayer printed circuit board has recently received attention which is formed into a full-thickness interstitial via-hole (IVH) structure which is able to easily address raising of the density.
The multilayer printed circuit board having the full-thickness IVH structure is a printed circuit board having a structure in which via holes for electrically connecting conductive layers to one another are formed in each of the interlayer insulating layers which constitute the laminate. That is, the foregoing printed circuit board has the via holes (buried via holes or blind via holes) which do not penetrate the substrate on which the circuit is formed and which electrically connect the internal wiring patterns to one another or the internal wiring patterns and the surface wiring patterns to one another. Therefore, the multilayer printed circuit board having the IVH structure is free from a necessity of specially forming regions for forming the through holes. Therefore, arbitrary layers can freely be connected to one another through small via holes. As a result, size reduction, high density and high-speed propagation of signals can be easily realized.
The multilayer printed circuit board having the IVH structure is manufactured by a process arranged, for example, as shown in FIG. 6.
Initially, a material having a structure in which an aramide nonwoven fabric cloth is impregnated with epoxy resin is employed as prepreg 112. Then, an operation for forming holes in the prepreg 112 is performed by using carbon dioxide gas laser. Then, conductive paste 114 is enclosed in obtained hole portions 112a (see FIG. 6(A)).
Then, copper foil 116 is laminated on each of the two sides of the prepreg 112, and then heat and pressure are applied to the prepreg 112 having the copper foil 116 by heat pressing. Hence it follows that the epoxy resin and the conductive paste of the prepreg 112 are hardened so that the electrical connection between the two copper foil members 116 on the two sides of the prepreg 112 is established (see FIG. 6(B)).
Then, the copper foil 116 on each side is patterned by an etching method so that a hard and double-sided substrate having via holes is obtained (see FIG. 6(C)).
Then, the obtained double-sided substrates are used as core layers to form a multilayer structure. Specifically, the prepreg and copper foil are sequentially laminated on the two sides of the foregoing core layer while the prepreg and the copper foil are being aligned. Then, heat pressing is again performed, and then the uppermost copper foil 116 is etched. Thus, a four-layer substrate is obtained (see FIGS. 6(D) and 6(E)). When a structure having a large number of layers is formed, the foregoing process is repeated. Thus, a six-layer substrate or an eight-layer substrate can be obtained.
The foregoing conventional technique, however, must repeat the laminating process using heat pressing and the process for patterning the copper foil by performing the etching operation. Therefore, the manufacturing process becomes too complicated and considerable time is required to complete the manufacturing operation.
If the multilayer printed circuit board having the IVH structure which can be obtained by the above-mentioned manufacturing method encounters only one defective portion (only one defective process) in the patterning operation during the manufacturing process, the overall circuit board, which is the final product, becomes a defective product Hence it follows that the manufacturing yield deteriorates excessively.
To overcome the above-mentioned problems, an object of the present invention is to provide a high-density multilayer printed circuit board having the IVH structure which can be efficiently manufactured and which permits a satisfactory high manufacturing yield.

Method for manufacturing single sided substrate


Some embodiments of the present disclosure relate to a decorative ring, a functional module and a mobile terminal. The decorative ring includes a body portion, a sidewall portion and a light guide portion, wherein the sidewall portion encloses a peripheral side of the body portion to form a accommodating region, and the accommodating region is configured to accommodate a part of the camera module; and the decorative ring has an inner face and outer face opposite the inner face, the inner face defines the accommodating region, and the light guide portion enables light to transmit from the side where the inner face positioned to the side where the outer face positioned.

Along with popularization of mobile terminals such as mobile phones and tablet computers, mobile terminal has become an indispensable part of people's work and lives. A user not only requires a simple communication function of a mobile terminal, but also pays more attention to a user experience of the mobile terminal. However, a decorative member of a related mobile terminal has an ordinary decorative effect, usage scenarios may not be enriched, and a user experience needs to be further improved.

Decorative ring, functional module and mobile terminal

GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP., LTD.


A thin layer of a material having a refractive index that varies non-abruptly between the refractive indexes of a first element and a second element in an optical device significantly reduces Fresnel losses in transmitting light from the first element into the second element. The layer is readily created by either an ion beam mixing process or by an ion beam enhanced deposition (IBED) process, forming a region of non-abruptly varying refractive index in one of the elements at an interface therebetween. A selected material is thus securely bonded into the laser light-receiving element which may conveniently be made of a material such as YAG, silica, sapphire, zirconia, quartz, silicon, germanium, zinc sulfide or zinc selenide, depending on the application at hand. In another aspect of this invention, the tip element is provided with an additional layer over the first layer to provide added protection thereto.

There are numerous devices which include optical elements in which light is received or through which light is transmitted. If the received light is to be transmitted through the optical element, it is desirable to reduce Fresnel losses caused by abrupt changes in the index of refraction, e.g., when light travelling through a vacuum or air reaches the optical element.
It has long been known to provide surface layers to such optical elements, wherein the index of refraction can be varied controllably to provide antireflection properties. Such antireflection layers are typically provided at the surfaces of a variety of optical elements, and often such layers are absolutely necessary for optimum performance of the devices. The optical elements themselves may be very small, e.g., the end of an optic fiber, or may be comparatively large, for example a canopy of a high performance fighter aircraft at which radar reflections are to be reduced.
The copending application on which this continuation-in-part is based, U.S. Ser. No. 07/724,019 U.S. Pat. No. 5,164,945 deals principally with laser devices, such as contact surgical devices in which laser light is applied as a laser light flux of intense energy for ablation or vaporization of tissues. Such devices typically include a tip formed of a ceramic material, e.g., YAG, sapphire, zirconia or silica, to which laser light is provided through an optic fiber having a different index of refraction. The parent application focused principally on methods and optical structures for obtaining reduced Fresnel losses at interfaces between two elements through both of which the laser light was to be transmitted efficiently. In such applications, Fresnel reflections tend to create an undesirable hot zone near the interface where the refractive index changes abruptly. In the prior art, this was typically dealt with by cooling of the interface region. Such a solution requires additional elements in the laser optical system and tends to make the surgical tool bulky and unwieldy.
There are many other situations were Fresnel losses produce other kinds of problems.
As is well-known, the display screens of computer monitors often produce a glare when viewed in ambient fluorescent or incandescent light because of reflection from the screen to the eyes of the operator. This is typically true both for cathode ray tube-type display devices and for liquid crystal-type and plasma discharge-type devices.
Numerous filter-type elements have been designed and are marketed for placement over a visible portion of the device being observed by a user to reduce such glare. These filter-type screens work by attenuating the reflected light by passing the reflected portion of incident ambient light through a polarizing filter or a tinted (baned pass) filter. Unfortunately, light emitted from the displayed device itself is also thus attenuated, thereby reducing the visible intensity and readability of information displayed on the device screen. Such filter devices are often cumbersome and can easily become dislodged from the display screen.
Incorporating an antireflection layer in the outer surface of the display screen glass itself should provide a major improvement in the overall visual appearance of the output of the display. A graded refraction index layer, with a very narrow band rejection filter, can be designed and formed in the output surface of the display screen, to attenuate only that portion of the optical spectrum which produces the undesirable reflected glare. If this is done, the light produced by the display screen itself will not be attenuated, thereby producing an output image which is perceived to be brighter. This, when coupled with a reduction in reflected glare from the surface of the screen due to ambient lighting will produce an output image which is brighter and clearer and will therefore be easier for an operator to read. With the increasing concern nowadays over job-related stress and trauma, such a solution to reduce operator fatigue is obviously desirable.
As noted earlier, canopies of hard performance fighter aircraft also require that antireflection layers be applied to both the inside and outside surfaces. On the inside surface of the canopy, antireflection coatings are desirable to reduce glare caused by internal lighting, to facilitate observation of the flight instruments and indicators by the occupants of the fighter aircraft. The outside layer is also preferably formed to allow reduced reflection, so as to function both as a radio wave absorber (for reduction of the radar cross-section of the aircraft) and as an optical light transmitter (to enhance visibility of the outside to the plane's occupants). Considering the size and shape of the typical fighter aircraft canopy, the needed antireflection surface properties coatings and band pass filters are difficult to manufacture with known antireflection coating techniques.
Another class of optical devices requires that received light, which may be within a relatively broad range of wavelengths, be readily passed within a selected band of the received optical spectrum while being minimized in other selected bands of the same received spectrum. For such optical devices, it is desirable to be able to provide an antireflection band pass filter in the light-receiving surface of the optical element. An example of such an optical device is an infrared sensing detector which usually is fabricated from materials such as cadmium sulfide and mercury cadmium telluride, which are materials sensitive to infrared radiation in the 0.5 to 20 .mu.m wavelength range. These infrared sensors are found in a variety of infrared sensing/imaging devices, such as the sensors for heat-seeking missiles, wind shear detectors for aircraft, and infrared imaging satellites. The infrared-sensitive detector materials must be protected from the environment and are thus always placed behind protective windows and focusing lenses. These windows and lenses must be fabricated from infrared-transmitting materials which typically include quartz (silicon-dioxide), silicon, germanium, zinc sulfide and zinc selenide. The specific material is selected to ensure that only a selected portion of the received infrared spectrum is detected or imaged.
In all such devices, however, the index of refraction of the materials of the optical device is higher than that of ambient air. This necessitates the use of an antireflection layer to optimize transmission of the selected band of the infrared radiation which is to be detected or imaged through the protective window or lens. In many cases, conventionally deposited antireflection materials, such as magnesium fluoride or silicon monoxide, do not adhere well to the surface of the infrared window or lens.
The Handbook of Laser Science and Technology, at Chapter 2.2, pgs. 431-458, "GRADED-INDEX SURFACES AND FILMS", by W. Howard Lowdermilk et al, discusses a variety of known techniques for providing graded refractive index layers at or on optical substrates and provides an analysis of the physics involved. This reference mentions that graded-index surfaces and films for broad band antireflective (AR) property have important applications in solar energy collection systems, antiglare display cases, and for optical recording discs on which a laser recording is to be made. The reference discusses how to generate and study non-absorbing graded surfaces and films for visible and near-IR light to increase its transmission through a substrate material. The reference states that such an antireflective treatment is typically obtained by chemical leaching and etching of a light-receiving surface of an optical substrate to remove certain components of the substrate material to create a porous, skeletonized, surface region which has pores of a dimension smaller than the wavelength of the light that is to be transmitted. Consequently, such techniques are limited to optical substrate materials with leachable components. Lowdermilk et al also discusses alternatives, including one in which a non-crystalline multicomponent, inorganic oxide film is deposited by a so-called sol-gel process, the film then being itself etched by chemical leaching and/or etching. Another alternative discussed is ion implantation into plastic surfaces, with subsequent etching of the ion tracks to produce a microporous surface region. Yet another proposed alternative is to form a so-called "Moth's Eye" type surface which has distributed fine protuberances on a light-receiving portion thereof. The last alternative discussed by Lowdermilk, at p. 454, is to provide an antireflection coating by adding a surface layer and then applying a laser to generate therefrom a laser-induced damage of the coating layer.
As will be readily perceived, leaching, etching, applying an added-on layer (which itself may thereafter by leached or etched), and other variations of such known techniques, all have significant limitations. Such limitations relate not only to the choice of materials, problems associated with producing very small or very large uniformly graded refraction index regions, high cost, and the risk that for precisely dimensioned elements such as optical lenses there will be a deleterious effect on the focusing capability of the optical element and hence of a more complex device utilizing such an optical element.
There is, therefore, a clear need for optical elements which have a region of non-abruptly index of refraction to minimize losses when light is received or to facilitate absorption or transmission of selected wavelengths of the received light, and for methods which enable this to be realized without physically damaging the light receiving surface and which do not significantly alter the geometry of the surface itself.
The present invention specifically addresses these needs, and is described fully with reference to drawing figures illustrating exemplary structures and geometries. It should be appreciated that the following description is not intended to be limiting, and it is expected that persons of ordinary skill in the art upon reading and understanding this invention will be led to make obvious modifications thereto for specific applications.
As previously noted, the parent application focused principally on the transmission of laser light into and through optical elements in a system utilizing laser light. It is specifically noted that, other than the fact that the structural forms and methods discussed therein pertained principally to uses of laser light for surgical applications, they are readily adaptable to light of any selected wavelength or combinations thereof. In other words, while laser light is coherent light, unlike light comprising a relatively wide range of wavelengths, the basic solution of providing a region of non-abruptly varying refraction index at a selected surface of an optical substrate or device is the same as in the parent application. For this reason, the teaching of the parent application, insofar as it is relevant in these regards, is expressly incorporated herein by reference.

Light-utilizing device including a region having a non-abruptly varying refraction index and a method for producing the region


Disclosed herein is a growing system for enhanced yield. In an exemplary embodiment of the growing system, a plant stand is provided, and a plurality of plant pots can be further provided. The plant stand can include a first frame, a second frame, and a plurality of brackets securing the plant pots to the first frame and the second frame. The plant stand is configured such that the plant pots have a tiered formation. In some embodiments, the brackets each have a segment upon which a corresponding plant pot is seated and segments for securing opposing sides of the plant stand. In some embodiments, the plant stand has a substantially x-shaped elevation.

Crops and other plants are conventionally grown on top of soil in agriculture, plantation gardens, communal parks, nurseries, green houses, home gardens, etc. For example, in a nursery, crops are grown in the soil, and, in prime time, the seedlings are places on shelves in front of one another. As another example, in controlled agriculture warm habitats, it is not uncommon to utilize a short, round structure with netted poles with crops placed in the middle, and the netted poles allow upward growth of the plants. As yet another example, narrow, long, tall structures are provided with crops planted in the ground soil therebetween, and, for better utilization of the soil, two long shelves are each provided on either side of the crop on said structures.
While such examples have shown some benefit in growing crops and other plants, an efficient utilization of land is not provided. What is needed in the art is a plant pot stand that enables an enhanced yield of crops and other plant growth in a given unit of space.


A method for determining the configuration of a diesel powered system having at least one diesel-fueled power generating unit, the method including a step for determining a minimum power required from the diesel powered system in order to accomplish a specified mission, and a step for determining an operating condition of the diesel-fueled power generating unit such that the minimum power requirement is satisfied while yielding at least one of lower fuel consumption and lower emissions for the diesel powered system.

Diesel powered systems such as, but not limited to, off-highway vehicles, marine diesel powered propulsion plants, stationary diesel powered system and rail vehicle systems, or trains, usually are powered by a diesel power unit. With respect to rail vehicle systems, the diesel power unit is part of at least one locomotive and the train further includes a plurality of rail cars, such as freight cars. Usually more than one locomotive is provided wherein the locomotives are considered a locomotive consist. Locomotives are complex systems with numerous subsystems, with each subsystem being interdependent on other subsystems.
An operator is usually aboard a locomotive to insure the proper operation of the locomotive, and when there is a locomotive consist, the operator is usually aboard a lead locomotive. In addition to insuring proper operations of the locomotive, or locomotive consist, the operator also is responsible for determining operating speeds of the train and forces within the train that the locomotives are part of. To perform this function, the operator generally must have extensive experience with operating the locomotive and various trains over the specified terrain. This knowledge is needed to comply with prescribeable operating speeds that may vary with the train location along the track. Moreover, the operator is also responsible for assuring in-train forces remain within acceptable limits.
However, even with knowledge to assure safe operation, the operator cannot usually operate the locomotive so that the fuel consumption and emissions is minimized for each trip. For example, other factors that must be considered may include emission output, operator's environmental conditions like noise/vibration, a weighted combination of fuel consumption and emissions output, etc. This is difficult to do since, as an example, the size and loading of trains vary, locomotives and their fuel/emissions characteristics are different, and weather and traffic conditions vary.
Based on a particular train mission, when building a train, it is common practice to provide a range of locomotives in the train make-up to power the train, based in part on available locomotives with varied power and run trip mission history. This typically leads to a large variation of locomotive power available for an individual train. Additionally, for critical trains, such as Z-trains, backup power, typically backup locomotives, is typically provided to cover an event of equipment failure, and to ensure the train reaches its destination on time.
When operating a train, train operators typically call for the same notch settings when operating the train, which in turn may lead to a large variation in fuel consumption and/or emission output, such as, but not limited to, Nox, CO2, etc., depending on a number of locomotives powering the train. Thus, the operator usually cannot operate the locomotives so that the fuel consumption is minimized and emission output is minimized for each trip since the size and loading of trains vary, and locomotives and their power availability may vary by model type.
A train owner usually owns a plurality of trains wherein the trains operate over a network of railroad tracks. Because of the integration of multiple trains running concurrently within the network of railroad tracks, wherein scheduling issues must also be considered with respect to train operations, train owners would benefit from a way to optimize fuel efficiency and emission output so as to save on overall fuel consumption while minimizing emission output of multiple trains while meeting mission trip time constraints.
Likewise, owners and/or operators of off-highway vehicles, marine diesel powered propulsion plants, and/or stationary diesel powered systems would appreciate the financial benefits realized when these diesel powered system produce optimize fuel efficiency and emission output so as to save on overall fuel consumption while minimizing emission output of while meeting operating constraints, such as but not limited to mission time constraints.

System and method for optimized fuel efficiency and emission output of a diesel powered system


The present invention provides a thermal transfer image receiving sheet having a good productivity, capable of inexpensively obtaining an image with high density and high resolution. A dye receiving layer is provided on one surface side of a base material film, and a porous layer with hollow particles bonded by a binder resin provided on the other surface side, respectively. The porous layer is attached with a base material via an adhesive layer.

1. Field of the Invention
The present invention relates to a thermal transfer image receiving sheet to be used in a state superimposed with a thermal transfer sheet.
2. Description of the Related Art
As a method for forming an image utilizing the thermal transfer, a method for forming a full color image with a thermal transfer sheet having a sublimation dye as a recording material supported by the surface of a base material sheet made of a paper, a plastic film or the like and a thermal transfer image receiving sheet provided with a receiving layer of a sublimation dye on the surface of a paper or a plastic sheet superimposed, is known. According to the method, since the sublimation dye is used as the color material, the density gradation can be adjusted freely so that the original full color image can be expressed on the image receiving sheet. Since the image formed by the dye is extremely vivid and has the excellent transparency, the excellent reproductivity of an intermediate color or the gradation can be provided so that a high-quality image coming up to the silver salt photograph can be formed.
In order to form a high-quality printed image on an image receiving sheet at a high speed by a sublimation type thermal transfer method printer, a dye receiving layer containing a dye dyeing property resin (a resin having a property to be easily dyed by a dye) as the main component on the base material or the image receiving sheet. When a paper material such as a coat paper and an art paper is used as a the base material of the image receiving sheet, since the thermal conductivity of these materials is relatively high, the dye receiving sensitivity in the receiving layer becomes lower.
Then, as it is disclosed in Japanese Patent Application Laid Open (JP-A) No. 5-16539, a biaxial oriented foamed film having a gap inside, containing a thermoplastic resin such as a polyolefin as the main component can be used as the base material for the image receiving sheet. Since an image receiving sheet using such film as the base material has an even thickness, the flexibility and a smaller thermal conductivity compared with a paper made of a cellulose fiber or the like, it is advantageous in that an even image with a high density can be obtained. However, in the case a biaxial oriented film is used for the base material of the image receiving sheet, the residual stress at the time of drawing is alleviated by the heat at the time of printing so that the film is contracted in the drawing direction. As a result, curling and wrinkles are generated in the image receiving sheet so that a trouble such as paper jam or the like may be generated at the time of running the image receiving sheet in a printer.
In order to improve the disadvantage, as it is disclosed in JP-A No. 3-268998, there is an example of using a laminated sheet as the base material of the image receiving sheet, the laminated sheet is manufactured by attaching and laminating a biaxial oriented foamed film having a gap on a core material having a relatively small thermal contraction ratio or a core material having a large elastic modulus.
Moreover, there is also a thermal transfer image receiving sheet manufactured by superimposing a non foamed plastic film on a core material via an adhesive including a foaming agent and foaming the foaming agent in the state to make the adhesive layer be a porous structure (see JP-A No. 6-23040). A technique of forming a porous layer having both the insulation property and the cushion property by coating a porous layer coating solution made of hollow particles mixed in a binder resin onto a base material sheet is known (see JP-A No. 2002-212890).

Thermal transfer image receiving sheet and method for manufacturing the same


A method, system and computer program product for automatically generating an operating system boot image for remotely booting a target machine is provided. The operating system boot image is installed on a first machine. The first machine and the target machine are connected with each other. Further, the hardware information of the target machine is extracted. An example of the hardware information includes Peripheral Component Interconnect (PCI) devices present on the target machine. The operating system boot image is configured, based on the hardware information.

The present invention relates to the field of computer networks. More specifically, the present invention describes a method and a system for generating an operating system boot image for remotely booting a machine such as a computer.
Remote booting is a process for providing support to a target machine for loading an operating system boot image stored on a remote machine. The remote machine and the target machine communicate with each other using a communication link such as a local area network (LAN). Remote booting does not require the target machine to have a local operating system boot image. The operating system boot image stores hardware information such as the device drivers required for booting the target machine into the given operating system.
Usually, machines in the network differ in their hardware configurations. Therefore, the boot image present on the remote machine may not be able to boot the given target machine.
Various methods are currently used for configuring an operating system boot image for remotely booting a given target machine in the network. One such method is maintaining multiple versions of the boot image, properly configured to the specific hardware configurations of each target machine in the network. With the increase in the size of the network, the number of machines and the boot images required to boot these machines increases. As a result, managing multiple versions of the boot image leads to increase in consumption of resources and hence a large overhead.
Another method for configuring an operating system boot image is manually configuring the boot image during the process of remote booting. The manual configuration is based on the hardware configuration of the target machine and may include installing the drivers for the devices for which the boot image is not configured. However, this method requires manual intervention to configure the boot image. This makes it labor intensive and time consuming. Further, to avoid manual intervention, some methods execute a script on the target machine with the operating system boot image, which installs the drivers that exist on the machine. However, executing the script requires boot image to be loaded on the target machine. Therefore, the success of this method depends on the proper loading of the boot image. Further, only the device drivers that are available on the target machine can be installed.
Another method for configuring the boot image is recovering the pre-installed boot image of the target machine over the network and re-installing the image on the target machine. However, the method installs a fresh boot image on the target machine and looses the pre-configured states of the boot image.
In light of the above discussion, there is a need for a method and a system that automatically configures the operating system boot image to boot on different hardware platforms. The method should eliminate the need to maintain multiple versions of the boot image for different hardware platforms. Further, if an operating system is already installed on the target machine the method can recover the pre-configured states of the operating system.

Method and system for automatic generation of operating system boot images


Medical methods and apparatus for locating and securing intravascular devices, substantially grafts or stents-grafts, via a laparoscopic duct created by a surgical procedure to approach a blood vessel lumen. A stapler including a tubular body having at its distal end a head with a die and die lid and at is proximal end a control mechanism with a retaining handle and a control lever pivotally thereto. The lever is operatively connected via a spring-loaded pressure rod with a fastener located in the die. The movement of lever is transformed into radial forces necessary for punching through the wall of the intravascular device and the surrounding blood vessel wall with a fastener and simultaneously bending ends of the fastener apart. Securing the ends of the intravascular device to the wall of a blood vessel is performed via a set of at least two staplers, each having several simultaneously deliverable fasteners.

1. Field of the Invention
The present invention relates to medical techniques, in particular, to apparatus and methods used to prevent an aorta rupture by means of grafts or stent-grafts. More particularly, the present invention relates to methods and apparatus for securing intravascular devices, such as grafts or stent-grafts, to the walls of blood vessels in direction from the inside of these vessels towards their outer surface.
2. Description of Related Art
An aortic aneurysm (or its rupture) is a most common form of arterial aneurysms. It is a very common type of deteriorating disease affecting the ability of a lumen to conduct fluids and may be life threatening. The aortic aneurysm is a ballooning of the wall of an artery resulting from the weakening of the artery's wall due to disease or other conditions. Left untreated, the aneurysm will frequently rupture, resulting in loss of blood through the rupture, the condition, which often leads to death.
The aorta is the main artery, which supplies blood to the circulatory system. The aorta arises from the left ventricle of the heart, passes upwards and bends over behind the heart, and passes down through the thorax and abdomen. Among other arterial vessels branching off the aorta along its path, the abdominal aorta supplies two side vessels to the kidneys, the renal arteries. Below the level of the renal arteries, the abdominal aorta continues to about the level of the fourth lumbar vertabrae (or the navel), where it divides into the iliac arteries. The iliac arteries, in turn, supply blood to the lower extremities and perineal region.
It is common for an aortic aneurysm to occur in that portion of the abdominal region between the renal arteries and the iliac arteries. This portion of the abdominal aorta is particularly susceptible to weakening, resulting in an aortic aneurysm. Such an aneurysm is often located near the iliac arteries. An aortic aneurysm larger than about five centimeter in diameter in this section of the aorta is ominous. Left untreated, the aneurysm may rupture, resulting in rapid, and usually fatal, hemorrhaging. Typically, a surgical procedure is not performed on aneurysms smaller than five centimeters because no statistical benefit exists in performing such procedures.
Aneurysms in the abdominal aorta are associated with a particularly high mortality rate; accordingly, current medical standards call for urgent operative repair. Abdominal surgery, however, results in substantial stress to the body. Although the mortality rate for an aortic aneurysm is extremely high, there is also considerable mortality and morbidity associated with open surgical intervention to repair an aortic aneurysm. This intervention involves penetrating the abdominal wall to the location of the aneurysm to reinforce or replace the diseased section of the aortic aneurysm. A prosthetic device, typically a synthetic tube graft, is used for this purpose. The graft serves to exclude the aneurysm from the circulatory system, thus relieving pressure and stress on the weakened section of the aorta at the aneurysm.
Besides synthetic grafts, there are developed and widely used all over the world particularly to prevent the rupture of aorta wall intravascular devices of the "stent-graft" type. They are inserted and located similarly to stents. The fixation of a stent-graft on the aorta walls is performed due to resilient forces of the material of the stent-graft itself usually having elastic members which bear up against the blood vessel wall or hook thereto. If the forces of resilient or elastic members of the stent-graft are insufficient for its fixation in a blood vessel, the stent-graft may be displaced from a given position and moved along the aorta due to the blood flow and peristelsic oscillations of the walls of this blood vessel, which is very dangerous to the patient.
Repair of an aortic aneurysm by surgical means is a major operative procedure. Substantial morbidity accompanies the procedure, resulting in a protracted recovery period. Further, the procedure entails a substantial risk of mortality. While surgical intervention may be indicated and the surgery carries attendant risk, certain patients may not be able to tolerate the stress of intra-abdominal surgery. It is, therefore, desirable to reduce the mortality and morbidity associated with intra-abdominal surgical intervention.
In recent years, the common repair means is to deploy a stent-graft within the lumen of the affected aorta in the region of the aneurysm. These methods and devices have been developed to attempt to treat an aortic aneurysm without the attendant risks of intra-abdominal surgical intervention. Among them are inventions disclosed and claimed in Parodi, Juan C. et al., WO 010487A1 for Graft Device for Treating Abdominal Aortic Aneurysms and its patent family, including U.S. Pat. Nos. 5,219,355, 5,522,880, 5,571,171, 5,643,208, 5,683,452, 5,693,087, 6,102,942, EP 461791A1, EP 809980A3, EP 903118A2, EP 903119A3, EP 903120A3 etc.
Parodi discloses a stent-graft device for locating inside an aorta affected by an aneurysm causing the aorta to have an inner diameter smaller than the sum of inner diameters of the iliac arteries. The graft has an upper main tubular portion dividing into two pending graft limbs capable of accommodating together within the restricted inner diameter of the aorta without the restriction of the aorta affecting the diameter of the limbs. The limbs have respective distal end portion with diameters larger than the diameters of the graft limbs so as to be accommodated and retained within the iliac arteries. Parodi's stent-graft is inserted using a tubular device also disclosed in his patent.
In other Parodi's patents there are disclosed stent-graft designs having a metal wire frame collapsible to a minimal size sufficient to insert the stent-graft into the artery through a puncture in its wall and expandable inside the aorta to a required size under the action of a radial force, such as a balloon. This frame is covered by a sheath which can contract and expand together with the frame under the action of external forces. Aforesaid stent-grafts are provided with means for mechanical fixation to the walls of the aorta or iliac arteries. Among those means we find balloon cuffs of a special shape at the stent-graft ends, see WO 010487A1, U.S. Pat. Nos. 5,522,880, 5,219,355, various hooks, elements shaped as scales, spirals and similar elements designed for fixation on the wall of the aorta or artery, see U.S. Pat. No. 5,911,733 Endovascular Expander of a Non-migrant Positioning, EP 948945A2 Endovascular Prosthesis with Fixation Means.
The problem of fixation of stents and stent-grafts inside the aorta and iliac arteries is PARTIALLY solved by other inventors likewise.
Lindenberg, Josef in EP 711135A1 discloses a stent with an improved anchorage in a vessel. The stent can be expanded from a radially contracted insertion state into a radially expanded positioning state such that in the radially expanded state at least one end has a larger radial extension than the remaining main body of the stent.
Samuels in U.S. Pat. No. 5,423,851 discloses a method and apparatus for affixing an endoluminal device to the walls of tubular structures within the body which utilizes incremental inflation of a balloon cuff to deploy radially projecting barbs attached to the cuff within a plurality of recesses.
Kugler, Chad disclose in their patent WO 19943A1 a stent-graft comprising radially expandable portions attached to one another and anchored to the aorta walls by a radial force. This stent-graft can bend to match the aorta longitudinal section by relative angular displacement of its portions.
Houser, Russel in WO 15144A1 discloses a system and components for treating aortic aneurysms including a reinforcing graft and combinations of fittings and rings for securing the graft to a host vessel, to branch vessels, for example, the iliac and renal arteries.
Edwin, Tarun et al., discloses in EP 868154A1 a structurally supported graft having a support structure with strain relief sections containing an internal surface, an external surface, or a wall thickness of a tubular graft member. The structural support forms a spiral about the tubular graft.
Numerous suggestions of stent-graft inventors present various hooks and anchor members, integral or not integral with the stent-graft frame to fixate the latter inside the aorta or iliac arteries. Such suggestions are disclosed in U.S. Pat. No. 6,015,431, EP 747020A2, EP 701800A1, EP 657147 A2, EP 466518A2, U.S. Pat. Nos. 5,669,936, 6,004,347, 5,733,325, 5,104,399, 6,030,413.
All the above-mentioned inventions have, in our opinion, a common drawback, which consists in the fact that the stent-grafts fixation on the inner walls of the aorta and iliac arteries is not reliable enough and brings to many complications. Therefore, under the action of blood flow and peristaltic oscillations of artery walls, stent-grafts are displaced from their proper positions, which may have grave consequences for the patient and result in his death because of the aorta rupture.

Method and apparatus for laparoscopic aortic repair by intravascular devices


It is an object to provide a vibration-damping alloy of high strength which has high strength and a high power of damping vibration and can be used to make components of a structure, machine, etc. and reduce effectively any vibration thereof and the noise thereby produced.. The vibration-damping alloy of this invention contains more than 0.50 wt. % Si, those proportions of Al and Si which fall within the range defined by a series of points in any of FIGS. 1 to 5, and that proportion of Mn which ranges from 0.1 wt. % to the sum of the proportions of Al and Si, the balance of its composition being Fe and unavoidable impurities. It preferably does not contain more than 0.01 wt. % of any of C, N, O, P and S.

The vibration and noise which occur in our living environment have been pointed out as one of the causes of public nuisance. An increase in the accuracy required of a precision machine has given rise to the necessity for providing means for preventing the vibration of the machine itself. One of the approaches which have hitherto been made to cope with those problems and requirements is to use a material having an outstandingly high power of damping vibration (a vibration-damping material) for making any component that is a source of vibration.
There have been developed a number of alloys which are macroscopically uniform and have a high power of damping vibration. The main examples thereof are flake graphite cast iron, some iron-based alloys, a Mg-Ni alloy, Cu-Mn alloys and a Ni-Ti alloy. The iron-based alloy can be said from the standpoints of strength and cost to be practically the best material for any parts that are used in a large quantity.
The known iron-based alloys include an Fe-Al alloy as proposed in Japanese Patent Publication No. 803/1977. This alloy is claimed to have a high power of damping vibration if it contains 2 to 8% Al. Japanese Patent Publication No. 28982/1981 proposes an iron-based alloy containing 0.4 to 4% Si and 0.1 to 1.5% Mn, and having a ferrite grain size number of 5 or below, and states that the Si and Mn which it contains fix N to eliminate any hindrance to the motion of dislocations which absorb vibration energy.
The vibration-damping properties of the known alloys as hereinabove described are, however, not necessarily satisfactory for the recent requirements which call for a very high level of vibration damping.
Under these circumstances, I, the inventor of this invention, have found that an alloy made by adding a specific proportion of Al or Si, or particularly both, to Fe exhibits an outstandingly high power of damping vibration which has hitherto not been possible.

Vibration-damping alloy of high strength


The invention provides pyridone derivatives represented by a general formula (I)

Melanin concentrating hormone (hereafter abbreviated as "MCH") is a cyclic peptide hormone/neuro-peptide, which was for the first time isolated by Kawauchi, et al. in 1983 from sermon hypophysis [cf: Nature, Vol. 305, 321 (1983)]. The hormone is known to functionally antagonize to melanin cell stimulating hormone in fishes, to cause concentration of melanin granules in melanophore and participate in body color change [cf: International Review of Cytology, Vol. 126, 1(1991); Trends in Endocrinology and Metabolism, Vol. 5, 120 (1994)]. Also in mammals, MCH-containing neuron nerve cells are localized in the hypothalamus lateral field and uncertain zone, but their nerve fibers are projecting over a very wide scope in the brain [cf. The Journal of Comparative Neurology, Vol. 319, 218 (1992)], and MCH is considered to preside over various central functions in living bodies.
Hypothalamus lateral field is known of old as feeding center, and furthermore, recently molecular biological and pharmacological knowledges suggesting participation of MCH in controlling energetic homeostasis are being accumulated. That is, it has been reported that expression of mRNA, which is a MCH precursor, was accelerated in brains of ob/ob mouse, db/db mouse, Ay/a mouse, Zucker fatty rat or the like which are model animals of hereditary obesity, or in brains of fasted mice [cf. Nature, Vol. 380, 243 (1996); Diabetes, Vol. 47,294(1998); Biochemical and Biophysical Research Communications, Vol. 268, 88 (2000); Molecular Brain Research, Vol. 92, 43 (2001)].
Acute ventricular administration of MCH to rats was observed to induce accelerated feeding activity [cf. Nature, Vol. 380,243 (1996)] and chronic administration invites obesity accompanied by polyphagy [cf. Proceedings of the National Academy of Science of the United States of America, Vol. 99, 3240, (2002)]. Moreover, MCH precursor gene-deficient mouse shows reduced food ingestion or rise in oxygen consumption per body weight compared to wild type mice. Its low body weight due to decrease in body fat was observed [cf. Nature, Vol. 396, 670 (1998)].
On the contrary, transgenic mouse which expresses excessive MCH precursor develops obesity accompanied by polyphagy and insulin resistance [cf. The Journal of Clinical Investigation, Vol. 107, 379 (2001)]. Consequently, it is suggested that MCH is an important factor for developing obesity and participates in diseases induced by metabolic disorder or respiratory diseases of which one of risk factors is obesity. Besides, MCH is known to participate also in anxiety-using action, epilepsy, memory, learning, diuretic action, excretory action of sodium and potassium, oxytocin secreting action, reproduction and reproductive function [cf. Peptides, Vol. 17, 171 (1996); Peptides, Vol. 18, 1095 (1997), Peptides, Vol, 15, 757 (1994); Journal of Neuroendocrinology, Vol. 8, 57 (1996); Critical Reviews in Neurobiology, Vol. 8, 221, (1994)].
MCH causes versatile pharmacological actions through MCH receptors which are present mainly in the central nervous system. As receptors of MCH, at least two types of type 1 receptors (MCH-1R or SLC-1) and type 2 receptors (MCH-2R or SLT) are known [cf. Nature, Vol. 400, 261 (1999); Nature, Vol. 400, 265 (1999); Biochemical and Biophysical Research Communications, Vol. 261, 622 (1999); Nature Cell Biology, Vol. 1, 267 (1999); FEBS Letters, Vol. 457, 522 (1999); Biochemical and Physical Research Communications, Vol. 283, 1013 (2001); The Journal of Biological Chemistry, Vol. 276, 20125 (2001); Proceedings of the National Academy of Sciences of the United States of America, Vol. 98, 7564 (2001); Proceedings of the National Academy of Sciences of the United States of America, Vol. 98, 7576 (2001); The Journal of Biological Chemistry, Vol. 276, 34664 (2001); and Molecular Pharmacology, Vol. 60, 632 (2001)].
Of those, the pharmacological action observed on rodents is induced mainly via MCH-1R [cf. Genomics, Vol. 79, 785 (2002)]. Because MCH-1R gene-deficient mice chronically administered with MCH do not develop polyphagy or obesity, it is known that controlling of energy exchange by MCH is induced via MCH-1R. Furthermore, deficiency of MCH-1R promotes activity amount of mouse [Proceedings of the National Academy of Sciences of the United States of America, Vol. 99, 3240 (2002)], and its participation in central diseases accompanied by behavioral disorder, for example, attention-deficit hyperactivity disorder, schizophrenia, depression and the like also is strongly suggested [cf. Molecular Medicine Today, Vol. 6, 43 (2000); Trends in Neuroscience, Vol. 24, 527 (2001)].
It is also reported that autoantibody to MCH-1R is present in serum of vitiligo vulgaris patient [cf. The Journal of Clinical Investigation, Vol. 109, 923 (2002)]. Furthermore, expression of MCH-1R in certain species of cancer cells was reported, and in vivo expression sites of MCH and MCH-1R also suggest MCH's participation in cancer, sleep, vigil, drug dependence and digestive disorders [cf. Biochemical and Biophysical Research Communications, Vol. 289, 44 (2001); Neuroendocrinology, Vol. 61, 348 (1995); Endocrinology, Vol. 137, 561 (1996); The Journal of Comparative Neurology, Vol. 435, 26 (2001)].
Functions of MCH are expressed upon its binding to MCH receptors. Therefore, when its binding to MCH receptor is inhibited, expression of MCH action can be inhibited. In consequence, substances which are antagonists to binding of MCH with its receptor are useful as preventing or treating agent of those various diseases in which MCH participates, for example, metabolic disorders represented by obesity, diabetes, hormone disorder, hyperlipidemia, gout, fatty liver, and the like; cardiovascular disorders, represented by stenocardia, acute or congestive heart failure, myocardial infarction, coronary atherosclerosis, hypertension, renal diseases and electrolyte abnormality, central nervous system or peripheral nervous system disorders represented by bulimia, emotional disturbance, depression, anxiety, epilepsy, delirium, dementia, schizophrenia, attention-deficit hyperactivity disorder, memory impairment, sleep disorders, cognitive failure, dyskinesia, paresthesias, smell disorders, morphine tolerance, drug dependence and alcoholism; reproductive disorders represented by infertility, preterm labor and sexual dysfunction; digestive disorders; respiratory disorders; cancer or pigmentation.
PCT International Publications WO 01/21577, WO 01/82925, WO 02/06245 and WO 02/02744 Pamphlets disclosed compounds having MCH receptor antagonism, but none of the disclosed compounds contains pyridone ring.
On the other hand, PCT International Publication WO 03/68232 Pamphlet disclosed a certain kind of pyridone derivatives exhibiting P38MAP kinase activity, but it contained no disclosure about MCH receptor antagonism of the compounds.

Abstract: [in the formula, R1 and R2 may be same or different and stands for H, etc., or R1 and R2 may form an aliphatic nitrogen-containing heterocyclic group together with the N to which they bind; X1-X3 may be same or different and stand for methine or N, provided not all of them simultaneously stand for nitrogen; X4-X7 may be same or different and stand for methine or N, provided that three or more of them do not simultaneously stand for N; Y1 and Y3 may be same or different and stand for single bond, —O—, —NR—, —S—, etc; Y2 stands for lower lkylene, etc.; R stands for H, etc., L stands for methylene; Z1 and Z2 may be same or different and stand for single bond or lower alkylene; or R1, L and Z2 may form an aliphatic nitrogen-containing heterocyclic group with the N to which R1 binds; and Ar stands for aromatic carbocyclic group, etc.].