A method of fabricating, from a first semiconductor substrate having two parallel main surfaces, a system including an islet of a semiconductor material surrounded by an insulative material and resting on another insulative material includes forming a layer of a first insulative material, and forming on the top main surface of the first semiconductor substrate a thin semiconductor layer forming the islet of semiconductor material. The thin semiconductor layer can be selectively etched relative to the first semiconductor substrate. A layer of a second insulative material is formed on exposed surfaces of the islet of semiconductor material and the thin semiconductor layer. The method further includes removing the first semiconductor substrate.

The present invention relates generally to a method of fabricating a system comprising a semiconductor substrate and a layer of insulative material on which the substrate rests, i.e., a silicon-on-insulator (SOI) system, and in particular, to a method of obtaining an SOI system including an extremely thin semiconductor layer of excellent uniformity made up of thin semiconductor islets surrounded by an insulative material and resting on a layer of another insulative material.
SOI systems are more particularly intended to be used to make devices of the type referred to as xe2x80x9cfully depletedxe2x80x9d devices in which the charge carriers are fully depleted in the channel area. In such devices the thickness of the semiconductor substrate, also referred to as the active layer, defines the threshold voltage of the MOS transistors and proves to be very important.
A major problem with using fully depleted systems is producing a thin layer of semiconductor substrate on a layer of an insulative material with good control and sufficient reproducibility of the thickness of the active layer between two different systems obtained in the same manner and having the same destination.
To achieve the necessary performance, fully depleted structures would require active layers with a thickness on the order of 5 to 30 nm, depending on the threshold voltage to be obtained and the dimensions of the gates of the transistors. For a track width of 0.1 mm and a threshold voltage of approximately 0.35 volts, for example, the ideal silicon thickness is on the order of 15 nm. Any deficiency in the flatness of the active layer and any difference in thickness of the active layer between two systems leads to a corresponding variation in the threshold voltage. As a general rule, the flatness deficiency on the same active layer is small (on the order of a few percent), but the thickness difference from one system to another can be much greater.
Prior art SOI system fabrication techniques all have a number of drawbacks, in particular these drawbacks include a low production yield, relatively thick active and insulative layers of mediocre uniformity, which are difficult to reproduce from one system to another, and consequently a threshold voltage that is difficult to control.
A first SOI system fabrication method, known as the xe2x80x9cSIMOX technologyxe2x80x9d, includes forming a layer of silicon oxide buried in a silicon substrate by high-dose oxygen implantation followed by annealing at a temperature above 1,300xc2x0 C. A major drawback of this method is that it requires non-standard equipment. Also, the high-dose oxygen implantation process takes a long time, which significantly reduces the production yield. Systems obtained by this method also suffer from insufficient quality of the buried silicon oxide layer and of the thin layer of silicon, due to a high density of pinholes.
In this method, the thickness of the silicon layers and the buried silicon oxide layers is determined by the implantation process, namely massive high-dose high-energy oxygen implantation. It is therefore particularly difficult to achieve a thickness of less than 50 nm for the residual silicon layer obtained by this method and less than 80 nm for the buried silicon oxide layer.
A second method, known as the xe2x80x9cBESOI techniquexe2x80x9d, includes forming an SOI system by forming a thin film of SiO2 on the surface of a first silicon substrate, then uniting the first substrate with a second silicon substrate by means of the thin film of SiO2, and finally eliminating a portion of one of the silicon substrates by grinding and mechanically polishing to form a thin layer of silicon on top of the buried silicon oxide layer. The silicon oxide layer on the first silicon substrate is formed by the successive steps of oxidizing the surface of the first substrate and etching the oxide layer formed to obtain the required thickness.
This method can produce only relatively thick buried silicon oxide layers and layers of silicon on the buried silicon oxide layers because of poor control over the etching process. The uniformity of thin layers obtained by this method is poor because of the mechanical steps, which generally cause a raised pattern on the surface of the active layer.
A third method, known as the xe2x80x9cSMARTCUT technologyxe2x80x9d includes forming a thin film of silicon oxide on a first silicon substrate by oxidation, and then implanting H+ ions in the first silicon substrate under the thin layer of silicon oxide to form a plane of cavities within it. The first substrate is then united with a second silicon substrate by means of the thin layer of silicon oxide. The resulting combination is then subjected to thermal activation for transforming the plane of cavities into a cutting plane.
This method yields an SOI system and a re-usable silicon substrate. It necessitates high-dose implantation of hydrogen atoms. Although hydrogen atoms are small, the surface of the thin layer of silicon obtained is damaged by the formation of pinholes. Also, using this technique does not generally produce a thickness of the thin layer of silicon less than about 50 nm.
In SOI systems obtained in this way the thickness of the active layer of silicon is determined by the hydrogen implantation, enabling cutting of the initial substrate and then final polishing of that layer. The flatness deficiency caused by this method is approximately 5 nm, regardless of the thickness of the final layer. It is therefore a major drawback for a thickness of less than 50 nm. Moreover, for a nominal thickness of less than 50 nm, for example, the variation in thickness from one wafer to another can be on the order of 25% to 40% of the average thickness of a batch of wafers, which forms a major handicap in the production of complex circuits because of the threshold voltage differences resulting from the thickness differences.
The above methods are described in particular in the article xe2x80x9cSOI: Materials to Systemsxe2x80x9d, A. J. Auberton-Hervxc3xa9, 1996 IEEE.
In view of the foregoing background, an object of the present invention is to provide a method of fabricating an SOI system which remedies the drawbacks of the prior art methods.
This and other objects, advantages and features of the present invention are provided by a method of fabricating an SOI system that produces semiconductor substrates resting on a very thin, highly uniform and highly reproducible layer of an insulative material in the form of thin semiconductor islets surrounded by an insulative material.
According to one aspect of the invention, a method of fabricating, from a first semiconductor substrate having two parallel main surfaces, a system including an islet of a semiconductor material surrounded by an insulative material and resting on another insulative material includes the following steps:
a) producing a layer of a first insulative material intended to surround the semiconductor islet deposited on a top main surface of the first semiconductor substrate;
b) forming on the top main surface of the first semiconductor substrate a thin semiconductor layer forming the islet and which can be selectively etched relative to the first semiconductor substrate;
c) forming a layer of a second insulative material on the surface formed by the islet of the first insulative material and the thin semiconductor layer; and
d) removing the first semiconductor substrate.
In the context of the invention the expression xe2x80x9cmain surfacesxe2x80x9d, when referring to a semiconductor substrate, means the largest surfaces of the substrate that are subjected to the various steps of the method, as opposed to its lateral surfaces.
According to another aspect of the invention, a bottom main surface of the first semiconductor substrate rests on a top main surface of a second semiconductor substrate which can be selectively etched relative to the first semiconductor substrate. Adding a second semiconductor substrate under the first semiconductor substrate reduces the cost of fabricating a system in accordance with the invention by reducing the thickness of the second semiconductor substrate and recovering a reusable semiconductor substrate when the first semiconductor substrate has been removed. This depends on the choice of the material forming the first semiconductor substrate which can be lost when it is removed.
According to another aspect of the invention, a trench is formed which opens onto the top main surface of the first semiconductor substrate, passes through the first semiconductor substrate and at least part of the second semiconductor substrate, and can be filled with a third insulative material which can be etched selectively relative to at least the first insulative material.
In particular, the trenches provide easier access to a larger surface area of the first semiconductor substrate and thereby reduce the time needed to remove the first semiconductor substrate. Filling them with a third insulative material facilitates the production of the layer of the first insulative material by virtue of the absence of holes on the top main surface of the first semiconductor substrate.
Preferably, the layer of the first insulative material is formed so as to cover only the trench and its near periphery, and the third insulative material filling the trench is removed before removing the first semiconductor substrate. The expression xe2x80x9cnear peripheryxe2x80x9d of the trench means an area extending at most 5 nm from the edge of the trench.
Accordingly, the layer of the first insulative material, which can be selectively etched relative to the third material that can fill the trenches, serves as a stop layer on removing the third material to reduce the time to remove the first semiconductor substrate, as previously mentioned.
According to a preferred aspect of the invention, and in particular if an edge crosses only a part of the second semiconductor substrate, the second semiconductor substrate is cut in a plane parallel to the main surfaces of the first semiconductor substrate which intersects the at least one trench. This provides access to the trenches so that the third insulative material therein can be removed, for example.
In accordance with another aspect of the invention the layer of the second insulative material is fixed to a layer of a fourth insulative material. This produces a greater thickness of insulation for supporting the semiconductor islets surrounded by an insulative material in the systems obtained in accordance with the invention. This also reduces the time needed to form the layer of the second insulative material.
In accordance with yet another aspect of the invention, the step of forming the layer of the first insulative material includes forming a layer of the first insulative material and etching thereof to form residual strips of the first insulative material and free areas intended to contain the semiconductor islets.
In accordance with another aspect of the invention, the thickness of the thin semiconductor layer forming the islets is substantially identical to the thickness of the layer of the first insulative material and is in the range from 3 to 15 nm. The expression xe2x80x9csubstantially identicalxe2x80x9d when referring to this thickness means varying by no more than 5%.
In accordance with another aspect of the invention, the layer of the second insulative material formed in step c) covers all of the surface formed by each thin semiconductor islet and the layer of the first insulative material.
In accordance with another aspect of the invention, the semiconductor substrates are chosen from monocrystalline or polycrystalline pure silicon, germanium, alloys of silicon and germanium Si1xe2x88x92xGex (0 less than x less than 1), or alloys of silicon and germanium containing carbon Si1xe2x88x92xxe2x88x92yGexCy (0 less than x less than 0.95 and 0 less than y less than 0.95). The material forming the thin semiconductor layer forming the thin semiconductor islets and that forming the second semiconductor substrate are identical. The first semiconductor substrate is preferably a Si1xe2x88x92xGex (0 less than x less than 1) alloy and the second semiconductor substrate is preferably monocrystalline silicon.
In accordance with another aspect of the invention the insulative materials are chosen from silicon oxides and silicon nitrides. In particular, the second, third and fourth insulative materials are identical. The first insulative material is preferably silicon nitride and the second insulative material is preferably silicon oxide.
In accordance with another aspect of the invention step c) of the method is performed by a selective epitaxial growth. Step d) of the method is preferably performed by selectively etching the second semiconductor material. In particular, the second semiconductor substrate may be cut using the xe2x80x9cSMARTCUTxe2x80x9d technology.

Method of fabricating a silicon-on-insulator system with thin semiconductor islets surrounded by an insulative material


A layered lithium metal oxide powder for a cathode material used in a rechargeable battery, with the general formula (1−x)[Lia-bAb]3a[CO1-cMc]3b[O2-d-eN′e]6c.xLi3PO4, with 0.0001≤x≤0.05, 0.90≤a≤1.10, 0<b+c≤0.1, −0.1≤d≤0.1 and e≤0.05, wherein A and M are one or more elements including at least one of the group consisting of Mg, Ti and Al; wherein N′ is either one or more dopants of the group consisting of F, S, N and P; the powder consisting of a core and an ion-conductive electron-insulating surface layer, the core having a layered crystal structure and the surface layer comprising a mixture of elements of the core material, oxides comprising either one or more elements of the group consisting of Mg, Ti and Al; and Li3PO4.

The present invention relates to a lithium cobalt-based oxide having a layered structure, for use as a cathode material in a rechargeable lithium-ion battery. The oxide has a core-shell configuration and is provided with doping elements, oxides and a dedicated coating layer.
Lithium cobalt oxide has served as an archetypal cathode material for secondary Li batteries ever since the discovery by Mizushima et al. in 1980 of its electrochemical properties. Lithium cobalt oxide-based materials have a layered structure alternating CoO2 and LiO2-slabs of edge-shared CoO6 and LiO6 octahedra along the 001 direction of the hexagonal unit cell (space group R-3m). Such a layered structure is ideally suited to reversibly accommodate lithium by de-intercalation and intercalation during battery charge and discharge, respectively. Due to their high energy density, rechargeable lithium and lithium-ion batteries can be used in a variety of portable electronics applications, such as cellular phones, laptop computers, digital cameras and video cameras. Commercially available lithium-ion batteries typically consist of graphite-based anode and LiCoO2-based cathode materials. As today's consumer electronics demand rechargeable batteries with higher energy density, there is a surge towards LiCoO2-based materials with increased energy density for more demanding end applications.
The energy density (in Wh/L) of LiCoO2-based cathode materials is defined as the product of the average voltage during cycling (in V), the specific capacity (in mAh/g) and the gravimetric density (in g/cm3). Effective approaches to improve the energy density include:
(a) increasing the packing density, which usually requires to increase the particle size of the powder particles, and
(b) increasing the specific capacity by increasing the charge voltage. In a commercial cell, LiCoO2 is usually cycled with an upper cutoff voltage of about 4.35 V with respect to a graphite anode, and gives a specific capacity of 164 mAh/g. To obtain a higher capacity from LiCoO2, one must charge it to a potential above 4.35 V; typically 4.40V with a specific capacity of 172 mAh/g, and even up to 4.45V with a specific capacity of 182 mAh/g. However, repeated charge-discharge cycles using a higher upper cutoff voltage results in rapid capacity losses, thought to be caused by the structural instability of de-intercalated LiCoO2, and by the increase in side reactions with electrolyte.
The industrial applicability of these two approaches is thus limited by side problems. The latter route is limited by the unstable behavior of the charged electrode materials in contact with electrolyte at higher voltage. As lithium is removed from LixCoO2 (with x<1), changes in the electronic structure of LixCoO2 occur, characterized by a strong electron charge transfer to the cobalt and oxygen, resulting in a strong electronic delocalization. Charged LixCoO2 is a very strong oxidizer and has a highly reactive surface. The electrolyte is thermodynamically unstable in contact with such an oxidizing surface. A reaction with electrolyte, being the reducing agent, is strongly preferred energetically. Even at low temperature during normal cycling of a LiCoO2 cathode at high voltage, this parasite reaction slowly but continuously proceeds. Reaction products cover the surface and electrolyte is decomposed, and both effects continuously result in a deterioration of the electrochemical performance of the battery whereby a loss of capacity and a strong increase of resistance (also known as polarization) is observed.
In addition, in "Solid State Ionic, 83, 167 (1996)", severe cobalt elution is reported for charged LixCoO2. The cobalt dissolution increases exponentially when the charge potential increases from 4.1V up to 4.5V in a coincell with respect to the lithium anode, and cobalt is deposited onto the negative electrode in cobalt metal form. A direct correlation between the coincell capacity fade and cobalt dissolution was established in this voltage range. In "Journal of Materials Chemistry, 21 (2011) 17754-17759", Amine et al. emphasize that the dissolution of transition metal ions from the cathodes in Li-ion batteries is a detrimental phenomenon because these metal ions migrate from the cathode to the anode and are reduced to a metallic state onto the anode surface electrolyte interface (SEI). The metal or metal alloys deposited on the surface of the graphite anode has a negative effect on the stability of the SEI. Thus, this metal dissolution from the cathode and deposition onto the anode results in poor safety, poor cycling stability at higher voltage, and in poor storage properties of the charged cathode at elevated temperature. "J. Electrochem. Soc., 155, 711, (2008)" describes a mechanism where stray HF contained in electrolyte attacks LiCoO2 and causes Co-dissolution.
A first conclusion of this prior art study is that achieving a lithium cobalt oxide with a functional surface preventing side reactions and metal dissolution is desirable. On the other hand, increasing the particle size to increase the packing density impairs the power capabilities of rechargeable batteries. In order to meet the power requirements, the battery as a whole and particularly the active cathode material itself must have a sufficient high rate performance. Increasing the mean particle size reduces the effective solid-state lithium diffusion kinetics which eventually results in lowered rate performance.
A careful study of published results on cathode materials allows a better understanding of the limitations of LiCoO2 based rechargeable batteries. A fundamental limitation of state of the art LiCoO2-based materials lies in the Li-excess and particle size dilemma. This dilemma is recalled in detail in Yoshio, M. et al. (2009). Lithium-Ion batteries. New York: Springer Science+Business Media LLC.: the higher the corresponding lithium excess, expressed as the molar ratio Li:Co>>1.00—typically Li:Co is around 1.05—used for the synthesis; the higher the packing density and the higher the particle size; the lower the specific surface area (or BET) and the higher the base content and the lower the electrochemical power properties. The mechanism behind LiCoO2 particle growth and densification with increasing Li:Co is based on a so-called "lithium-flux effect" where the Li-excess acts as a flux agent enhancing the growth of LiCoO2 particles which eventually increases the packing density. Such LiCoO2 materials with dense and monolithic particle morphology are desirable to decrease the specific surface area and decrease the side-reaction area of the electrolyte with the cathode materials.
In W02010-139404, the authors illustrate the relationship between packing density, mean particle size and lithium excess used for the preparation of state of the art Mg and Ti doped LiCoO2. Typical packing densities of ca. 3.70 g/cm3 are achieved for 18 μm particles. The authors emphasize that large pressed densities are preferable and obtained with monolithic, potato-shaped and non-agglomerated primary LiCoO2 particles. However, the use of large Li:Co excesses to achieve larger monolithic particles results in poor electrochemical performances, with lower power (lower C-rate) and lower discharge capacity, which in return cancels the energy density gains achieved by increasing the particle size. These limitations in power and discharge capacity are resulting from two main factors: (i) a basic solid state diffusion limitation following a quasi-Fick-law (D˜vL2/t) as the particle size increases and (ii) introduction of structural defects with increasing Li-excess; for example as discussed by Levasseur in Chem. Mater., 2002, 14, 3584-3590 where the Li-excess is associated with Co substitution for Li in the CoO2 layers and with oxygen deficiency Li1+xCo1−xO2−x; further limiting the Li-ion diffusion mean free path within the particle. Last, such large Li:Co values also increase the pH, the free (or soluble) base content and the carbon content, which impairs safety, storage and bulging properties of charged cathodes.
In the prior art several approaches have been suggested to cope with these problems. They are usually associated with doping, coating or surface modification of LiCoO2 based materials. Co substitution for elements such as Mg, Ti and Al and improvement of high voltage properties is for example described in EP1137598B1. Such doping prevents the structural collapse and improves the cycle stability and reversible capacity of LiCoO2-based materials at high voltage. Industrial applicability is however limited as sintering of LiCoO2 is prevented by Ti-doping and hence requires higher sintering temperature or larger Li-excess. To achieve high voltage stability, LiCoO2 materials are usually coated (for example with Al2O3) or otherwise chemically modified (e.g. by providing a fluorinated surface). A problem is that coated dense LiCoO2 particles often have larger polarization and lower Li-ion diffusion resulting in lower reversible capacity and poor rate performance, so that a part of the gain of energy density achieved by charging to higher voltage is annulled by a lower intrinsic capacity.
As a consequence, the current state of the art synthesis does not allow to achieve dense, monolithic LiCoO2-based particles with superior energy density; electrochemical power and cycle life properties. Partial improvements and optimizations have been achieved, but the above mentioned basic problems have not yet been fully resolved. Hence there is clearly a need for high energy density LiCoO2 based cathodes which can be cycled in a stable manner, namely by reducing side reactions and metal dissolution in real cells at higher voltages. It is an object of the present invention to define a cathode material for high end secondary battery applications having a high packing density, high rate performance, improved discharge capacity and showing high stability during extended cycling at high charge voltage.

Cobalt-based lithium metal oxide cathode material


The present invention provides a holder and dispenser of rolled products such as paper, plastic, foil, tape and other goods with magnetic resistance. The dispenser generally includes a base and a cage that supports the roll of material and rotates relative to the base. A magnetic resistance mechanism is generally located between the base and the cage. The magnetic resistance mechanism creates forces that act to resist rotation of the cage relative to the base.

Household products are often supplied in continuous sheets on roll such as a roll of paper towels. The individual sheets on the roll are often perforated at uniform length to provide tearing of the desired amount of material from the roll. A holder that secures the roll and permits the roll to rotate commonly dispenses product. In many dispensers, the roll may rotate freely making it more difficult to dispense only the desired amount and making it more likely that the roll will unravel when the leading sheet of material is pulled.
Although prior art solutions have used friction to limit the rotation of the dispenser, it is difficult to control and maintain the proper amount of friction to allow the proper dispensing of the desired material, yet limit the unraveling of the roll when the leading sheet is pulled. Therefore, it is desired that there is a need for a holder and dispenser for rolled products that more precisely controls the dispensing of a rolled product while preventing unraveling of the roll when the leading sheet is pulled.

Magnetic resistance for rolled material dispensers


A connector with a cover for connecting an electric wire to a printed circuit board or a like element wherein a half inserted condition of a terminal accommodated in a housing can be detected. A plurality of terminal accommodating chambers each having a flexible arresting piece formed on an inner wall thereof are formed in a housing body and each has a terminal accommodated therein. The terminal is connected at an end thereof to an electric wire and has an engaging hole formed at a rear face of the end portion thereof. The terminal further has a contact piece folded back over itself from the other end to an intermediate portion thereof and has a protrusion formed at an intermediate portion thereof by bending a pair of side plates thereof inwardly toward each other. The contact pieces and protrusions are exposed outside through slots formed in a top plate of the housing body. A plurality of trunnions are formed at an end of the cover and engaged with a plurality of channel-shaped engaging portions formed on the top plate, and a hinge portion of the cover is extended to form a detecting projection.

1. Field of the Invention
This invention relates to a connector for connecting a printed circuit board or a like element to an electric wire.
2. Description of the Related Art
Various connectors for connecting a printed circuit board or a like element to an electric wire are already known. An exemplary one of conventional connectors is disclosed in Japanese Utility Model Laid-Open Application No. 53-104389 and is shown in FIGS. 10, 11 and 12. Referring to FIGS. 10 to 12, the conventional connector includes a housing body 110 having a plurality of terminal accommodating chambers 111 formed therein. Each of the terminal accommodating chambers 111 has an arresting projection 114 formed therein on the housing body 110. An electric wire 132 is accommodated in each of the terminal accommodating chambers 111 and is connected to an end of a terminal 130 which has a contact piece 131 at the other end thereof and has an engaging hole 133 formed at an intermediate portion thereof. The engaging hole 133 of the terminal 130 cooperates with the arresting projection 114 of the corresponding terminal accommodating chamber 111 to constitute arresting means for arresting the corresponding electric wire 132 in the terminal accommodating chamber 111. A top plate 119 of each of the terminal accommodating chambers 111 is partially cut away so as to expose the contact piece 131 of the terminal 130 partially therethrough.
A cover 113 is formed contiguously to and extends laterally from a portion of the housing body 110 intermediate of the terminal accommodating chambers 111 by way of a flexible portion 112 of a reduced thickness. The cover 113 has an arresting projection 116 formed on an inner face adjacent an end thereof. The arresting projection 116 cooperates with an arresting projection not shown of the housing body 110 to constitute arresting means for arresting the housing body 110 at its closed position. A flexible arresting piece 117 is formed on a face of the housing body 110 remote from the cover 113 and has an arresting projection 118 formed thereon. The arresting projection 118 cooperates with an engaging projection 125 of a casing 120 to constitute arresting means for arresting the housing body 110 at the casing 120.
The casing 120 has a recess or cavity 121 formed at an end portion thereof and has a circuit board portion 123 at the other end portion thereof. A plurality of printed conductors 122 are disposed on the circuit board portion 123 of the casing 120, and each of the printed conductors 122 has a contact terminal 124 in the cavity 121. The contact terminal 124 cooperates with the contact piece 131 of the corresponding connecting terminal 130 on the housing body 110 to constitute sliding contacting means between the printed conductor 122 and the connecting terminal 130, and the cavity 121 constitutes receiving means for receiving an insertion end portion 115 of the housing body 110.
When the conventional connector is to be used, a terminal 130 having a contact piece 131 formed at an end portion thereof and having an electric wire 132 connected to the other end thereof is inserted into a terminal accommodating chamber 111 of the housing body 110 by way of an end opening adjacent the cover 113 (left end opening in FIG. 11). At a position at which the terminal 130 is inserted fully in the terminal accommodating chamber 111, the terminal 130 is arrested at the engaging hole 133 thereof by the arresting projection 114 of the terminal accommodating chamber 111 so that it is thereafter held at the position.
Also the other terminals 130 are accommodated successively into the other terminal accommodating chambers 111, and then, the cover 113 is closed to cause the arresting projection 116 thereon to be arrested by the arresting projection not shown of the housing body 110, thereby completing assembly of the housing body 110.
Subsequently, the cover 113 is opened and the insertion end portion 115 of the housing body 110 is inserted into the cavity 121 of the casing 120 with the cover 113 positioned on the printed conductor 122 side as shown in FIG. 12. At the thus completely inserted position of the housing body 110, the arresting projection 118 of the flexible arresting piece 117 thereof is arrested by the engaging projection 125 of the casing 120 so that the housing body 110 is held at its position in which it is inserted completely in the casing 120. Upon insertion of the housing body 110, the contact piece 131 of each of the terminals 130 slidably moves on and contacts with the contact terminal 124 of the corresponding printed conductor 122 of the casing 120 to establish electric connection between them.
Since the conventional connector is constructed in such a manner as described above, it has a drawback that, when the terminals 130 are inserted into the terminal accommodating chambers 111 of the housing body 110, even if any one of them is in an incompletely or half inserted condition, if this is overlooked, then since the cover 113 of the housing body 110 can still be closed similarly as in a regular condition, it will be forwarded to a next step and consequently, inadvertently much time will be taken for the discovery of a trouble in an actually assembled condition of the connector.
Another exemplary one of conventional connectors is disclosed in Japanese Utility Model Laid-Open Application No. 53-146982 and is shown in FIGS. 13 and 14. The connector shown is similar to and different from the connector shown in FIGS. 10 to 12 only in that it includes a modified cover 142 and a mounting structure for the same. Accordingly, description is given only of the cover 142 and the mounting structure to avoid redundancy.
The cover 142 is provided for sliding movement in a pair of grooves 144 formed on a housing body 140 adjacent contact pieces 151 of terminals 150 individually accommodated in a plurality of terminal accommodating chamber 141 of the housing body 140, and a pair of open door stoppers 145 are formed at a portion adjacent an end of the cover 142 while an operating projection 146 in the form of a laterally bent tab is formed at the end of the cover 142 remote from the open door stoppers 145. A pair of engaging recesses 148 are formed on a side plate 147 which extends between a pair of outer side portions of the housing body 140 on the opposite sides of the groove 144. The engaging recesses 148 constitute engaging means for engaging with the open door stoppers 145.
Since the present connector is constructed in such a manner as described above, when it is to be assembled, the terminals 150 are successively accommodated into the individual terminal accommodating chambers 141, and then the cover 142 is slidably moved to be closed. Thereupon, the operating projection 146 of the cover 142 is abutted with and stopped by an end edge of the side plate 147 of the housing body 140 while a protrusion 149 on the cover 142 is engaged with the inner face of the side plate 147 to hold the cover 142 at the closed position.
When the housing body 140 is to be inserted into a casing 120 which is similar to the casing 120 of the connector shown in FIGS. 10 to 12, the cover 142 is slidably moved along the grooves 144 to its open position. Thereupon, the open door stoppers 145 of the cover 142 are engaged with and stopped by the engaging recesses 148 of the side plate 147. Thereafter, the arrangement is operated in a similar manner as the arrangement shown in FIGS. 10 to 12 to assemble the housing body 140 and the casing 120.
Since the present connector is constructed in such a manner as described above, even if a terminal 150 is inserted into a terminal accommodating chamber 141 of the housing body 140 but to an intermediate or incompletely inserted position and then this is overlooked, since the cover 142 of the housing body 140 can still be closed in a similar manner as in a case wherein all of the terminals 150 are inserted to individually fully inserted positions thereof, the arrangement thus assembled will be forwarded to a next step as it is. Therefore, inadvertently much time will be taken for the discovery of a trouble which arises from the particular terminal 150 inserted to the incompletely inserted position in the assembled arrangement.


A compound of the formula wherein R1, R2 and R3 are as defined above, which are inhibitors of the enzyme protein kinases such as Janus Kinase 3 and as such are useful therapy as immunosuppressive agents for organ transplants, xeno transplation, lupus, multiple sclerosis, rheumatoid arthritis, psoriasis, Type I diabetes and complications from diabetes, cancer, asthma, atopic dermatitis, autoimmune thyroid disorders, ulcerative colitis, Crohn's disease, Alzheimer's disease, Leukemia and other autoimmune diseases.

The present invention relates to pyrrolo[2,3-d]pyrimidine compounds which are inhibitors of protein kinases, such as the enzyme Janus Kinase 3 (hereinafter also referred to as JAK3) and as such are useful therapy as immunosuppressive agents for organ transplants, xeno transplation, lupus, multiple sclerosis, rheumatoid arthritis, psoriasis, Type I diabetes and complications from diabetes, cancer, asthma, atopic dermatitis, autoimmune thyroid disorders, ulcerative colitis, Crohn's disease, Alzheimer's disease, Leukemia and other indications where immunosuppression would be desirable.
This invention also relates to a method of using such compounds in the treatment of the above indications in mammals, especially humans, and the phamaceutical compositions useful therefor. JAK3 is a member of the Janus family of protein kinases. Although the other members of this family are expressed by essentially all tissues, JAK3 expression is limited to hematopoetic cells. This is consistent with its essential role in signaling through the receptors for IL-2, IL-4, IL-7, IL-9 and IL-15 by non-covalent association of JAK3 with the gamma chain common to these multichain receptors. XSCID patient populations have been identified with severely reduced levels of JAK3 protein or with genetic defects to the common gamma chain, suggesting that immunosuppression should result from blocking signaling through the JAK3 pathway. Animal studies have suggested that JAK3 not only plays a critical role in B and T lymphocyte maturation, but that JAK3 is constitutively required to maintain T cell function. Modulation of immune activity through this novel mechanism can prove useful in the treatment of T cell proliferative disorders such as transplant rejection and autoimmune diseases.


Disclosed is a recording method including attaching a reaction solution which forms a recording region S1 by attaching a reaction solution which includes an aggregating agent which is able to aggregate components of a color ink composition to a target recording medium with an attachment amount of 100 nmol/inch2 to 1500 nmol/inch2 of the aggregating agent, and attaching a color ink composition which forms a recording region S2 by attaching the color ink composition which includes a coloring material and a resin to the recording region S1 within 30 seconds of attaching the reaction solution.

1. Technical Field
The present invention relates to a recording method.
2. Related Art
Ink jet recording methods are able to record high definition images using a comparatively simple apparatus and have undergone rapid developments in various aspects. Among these, various studies have been carried out regarding obtaining higher image quality. For example, with an object of providing an ink jet recording method which is able to provide color images with a high image density and high quality without bleeding by simply attaching an optimum amount of a reaction solution for improving the fixing property and the like of an ink to a favorable position on a recording medium, JP-A-2005-225114 discloses an ink jet recording method which records an image by forming ink dots and reaction solution dots on the recording medium based on ink recording data and reaction solution recording data using an ink discharging head which discharges ink and a reaction solution discharging head which discharges a reaction solution which has a property of aggregating the ink, in which, with respect to a region in which ink dots are formed on the recording medium, reaction solution dots are formed with a recording duty of 100% by making the dot size uniform.
In a case of not using a reaction solution, the image quality deteriorates due to the aggregability on the obtained recorded matter decreasing and the like. On the other hand, in a case where the coating amount of the reaction solution is excessive, there are problems in that odor is generated from the obtained recorded matter, and additionally the durability of the recorded matter deteriorates.
The coating of the reaction solution may be performed by roller coating or ink jet coating. JPA-2005-225114 discloses carrying out coating by ink jet coating from the viewpoint of controlling a coating amount of a reaction solution since it is not possible to adjust the coating amount in roller coating.
However, even JP-A-2005-225114 does not completely solve the problem of a trade-off between improving the aggregability and the odor and the recorded matter durability. Therefore, there is a demand for a recording method which exhibits an effect of further improving the aggregability while having a small coating amount of the reaction solution.


A two-dimensional matrix of complex coupled (gain or loss coupled) semiconductor DFB lasers is disclosed. The matrix includes several parallel branches of series lasers, each series having a plurality of lasers which are grown on the same wafer. The parallel branches are combined at either one end or both ends with either an integrated on-chip optical combiner or an external coupler to obtain a single optical output port. Each laser in the series comprises a multiple quantum well active region and a complex coupled grating having corrugations along a cavity length direction formed by periodic etching grooves through either the active region or the lossy QW region. The depth of etching is defined so as to provide a substantial insensitivity of each laser to the external feedback and random facet variations and to thereby ensure no substantial interaction between lasers in the series. Bragg wavelengths of lasers from different series interleave with each other or differ incrementally along a cavity length direction. The sub tuning wavelength range covered by one laser in the matrix falls outside of the stopbands of all other lasers which are not only in the same series but also physically close to the designated output port. The laser structure is capable of simultaneous multi-wavelength generation, and/or tunable selectable single wavelength operation, and/or reliable wavelength switching.

Fiber optics communication systems require compact light emitting sources capable of generating single-mode, tunable, narrow linewidth radiation in the 1.3-1.56 .mu.m wavelength range. Some of the existing semiconductor lasers, for example, InGaAsP DFB lasers can meet requirements for high power and proper wavelength, but fail to satisfy requirements for high side mode suppression ration (SMSR), predictability and controllability of generated wavelength, insensitivity to external feedback and random facet phase variations, simple manufacturing and high device yield. Additionally, a rapid advance in high speed and large capacity dense wavelength division multiplexing (DWDM) fiber optics systems continuous to demand semiconductor lasers not only possessing properties mentioned above but also capable of providing a wide continuous tuning range and multi-wavelength generation for practical and cost effective applications.
Conventional index coupled DFB lasers employing an index corrugation have an inherent problem in existence of two longitudinal modes with an equal threshold gain which results in poor single mode operation as shown, for example, in the article by H. Kogelnik and C. V. Shank "Coupled-mode theory of distributed feedback lasers", J. Appl. Phys., vol. 43, no. 5, pp. 2327-2335, 1972.
For index coupled DFB lasers, the longer and shorter wavelength Bragg modes around the laser stop band are intrinsically degenerate in terms of the threshold gain. The degeneracy may be broken, for example, in the presence of asymmetric facet coatings and facet phase variations. The yield of DFB lasers with a fixed lasing wavelength and a predetermined SMSR is very low in practice because of the random variations of facet phase, yield usually being not more than several percent. Without internal built-in mode discrimination between the two degenerate modes, mode properties of index coupled DFB lasers are primarily determined by asymmetric facet coatings and variations of facet phases. As a result these lasers are very sensitive to variations of the effective laser facet phases and can be strongly influenced by any external feedback.
For quarter wavelength shifted DFB lasers, described, for example, in the article by K. Utaka, S. Akiba, K. Sakai, and Y. Matsushima ".lambda./4-shifted InGaAsP/InP DFB lasers", IEEE J. of Quantum Electronics, Vol. QE-22, no.7, p.1042-1052 (1986), an additional phase shift is introduced into the laser structure to break the degeneracy between the two Bragg modes around the stop band. The yield of this type of lasers ensuring single-mode operation is higher than the conventional index coupled DFB lasers. However, since the laser operation is based upon an additional phase introduced into the structure, it is critically dependent on the phase shift which has been actually introduced to the laser and which is very difficult to control or manufacture in large scale. The laser facet phase still plays a significant role since it works together with the introduced built-in phase to satisfy the round-trip phase condition for resonance. A good anti-reflection (AR/AR) coating reduces the effect of the facet phase on the laser properties. However, the quarter wavelength shift laser usually suffers from a large longitudinal spatial-hole burning (SHB), resulting from the phase shift introduced in the center of the laser, especially when a large index coupling is required to reduce a threshold current in the case of AR/AR coating. Strong SHB may quickly degrade the SMSR when the injection current is increased.
When a laser is facet phase sensitive or critically dependent on the phase shift introduced within the cavity, it becomes very sensitive to any perturbations or variations in its operational conditions. When a number of such lasers are arranged in a series, they interact with each other. The presence of one laser influences on operation of other lasers. One laser usually acts as an effective grating-based reflector to cause reflections fed back into other lasers to vary not only in amplitude, but also in phase, both being wavelength dependent. Additionally, both the amplitude and the phase are also dependent on the operational conditions of adjacent lasers, such as temperature, injection current and leakage current between the lasers. Thus, interaction between lasers significantly influences the lasing behavior of each laser, resulting in an extremely low device yield and poor laser performance. Often stable operation of the series as a whole is impossible.
O. Sahlen, L. Lundqvist, J. Terlecki and J. P. Weber in the article "A robust WDM network laser source: the DFB-Cascaded laser", ThB1, OFC'97, Dallas, USA, described an attempt to use quarter wavelength shifted DFB lasers as building blocks in a series. Although quarter wavelength shifted DFB lasers exhibit a high single mode yield in theory, they suffer from a large spatial hole burning as discussed above. Their current tuning range is also relatively small due to the potential onset of other longitudinal modes caused by spatial hole burning. As a result, the series as a whole did not demonstrate high performance and stability, and simultaneous multi-wavelength operation was not reported at all.
The predictability of the lasing wavelength for each individual DFB laser is also a critical parameter for the series operation. Even if one of the lasers, working as a perfect single-mode laser, happens to lase on a wrong side of the stop band, the entire series will fail in its operation. The same result will happen if one laser unexpectedly switches between the two Bragg modes, which is unacceptable for practical system applications.
Therefore, in order to obtain a good performance of series DFB lasers, it is critical to ensure that each laser operates substantially independently and has no influence on the lasing behavior of other lasers in the series, thus, providing no substantial interaction between lasers in the series, each laser maintaining high performance characteristics at the same time.
A series of lasers described in the above referenced U.S. Pat. No. 6,104,739 to J. Hong provides emitting of single or multi-wavelength generation from one single common output due to independent generation of the lasers forming the series, and ensures an enhanced tuning range of the series of lasers relative to a single laser approach. However, light generated by the lasers which are remote from the output facet of the series experiences losses when travelling through the remaining lasers which are closer to the output facet. Therefore in practice a maximum number of lasers used in the series is limited. Furthermore, in order to obtain a continuous wavelength tuning, the stopband of the laser and the wavelength spacing between the lasers have to be carefully arranged in order to both cover the entire tuning range and also minimize the potential interaction among lasers.
There is still a need in the industry to increase the number of wavelengths which can be simultaneously generated by laser structures (and correspondingly to increase the number of data channels to be transmitted), and further to enhance the tuning range of the output radiation. It is also critical to provide compact arrangement of lasers, reduce the size and the number of optical components used, reduce losses and provide compact packaging of the system.

Strongly complex coupled DFB laser series


Preparation of an elastomer which contains a dispersion of filler reinforcement by forming a filler reinforcement in-situ within the elastomer host, the resulting elastomer/filler composite and tire having component which contains such reinforced elastomer. The invention includes a rubber composition of at least two elastomers wherein one of said elastomers is a pre-formed composite of elastomer and in-situ formed filler reinforcement. A tire having a component of such rubber composition, particularly a tire tread, is specifically contemplated.

Elastomers are conventionally reinforced with particulate reinforcing fillers such as, for example, carbon black and sometimes precipitated silica.
It is sometimes difficult to obtain an adequate, homogeneous dispersion of the reinforcing filler, particularly silica, in the rubber composition, by conventionally blending the rubber and filler under high shear conditions.
Accordingly, however, an adequate, homogeneous, dispersion of the reinforcing filler particles within the rubber composition is sometimes desired.
In one aspect, it has heretofore been proposed to create a dispersion of silica in polysiloxane polymers such as poly(dimethylsiloxane), or (PDMS), elastomer(s) by in-situ formation of silica from a base-catalyzed sol-gel conversion of tetraethoxysilane (TEOS). For example see "Precipitation of Silica-Titania Mixed-Oxide Fillers Into Poly(dimethylsiloxane) Networks" by J. Wen and J. Mark; Rubber Chem and Tech, (1994), volume 67, No.5, (pages 806-819).
A process of preparing rubber products has been suggested by mixing the TEOS with a solution of unvulcanized rubber in an organic solvent and subjecting it to a sol-gel condensation reaction to provide a finely powdered silica. For example, see Japanese patent application publication 93/02152.
Further, a composition has been suggested as comprising a base rubber and globular silica made by a sol-gel method and having an average particle diameter of 10-30 microns and specific surface area of 400-700 square meters per gram. The composition is suggested for use in a flap of a tire. For example, see Japanese patent application publication 6145429.
Also, a tread rubber composition has been proposed as a composition of a base rubber and spherical silica prepared by a sol-gel transformation. For example, see Japanese patent application publication 6116440 and corresponding Japanese patent publication 2591569.
Further, an in-situ formation of silica from a sol gel reaction of TEOS in an organic solution of styrene/butadiene rubber, onto which a bis(3-triethoxysilylpropyl) tetrasulfide has been previously grafted to form triethoxysilyl groups, has been reported. ("The Effect of Bis(3-triethoxysilylpropyl) Tetrasulfide on Silica Reinforcement of Styrene-Butadiene Rubber" by Hashim, et al, in Rubber Chem & Tech, 1998, Volume 71, pages 289-299).
In the description of this invention, the term "phr" where used herein, and according to conventional practice, refers to "parts of a respective material per 100 parts by weight of rubber, or elastomer".
In the description of this invention, the terms "rubber" and "elastomer" if used herein, may be used interchangeably, unless otherwise prescribed. The terms "rubber composition", "compounded rubber" and "rubber compound", if used herein, are used interchangeably to refer to "rubber which has been blended or mixed with various ingredients and materials" and such terms are well known to those having skill in the rubber mixing or rubber compounding art.

Reinforced elastomer preparation, elastomer composite and tire having component thereof


The angular speed measuring device has two acceleration sensors mounted on a circular plate rotating about a first rotation axis and each sensor generates a signal depending on a Coriolis force produced when it rotates about two additional rotation axes. The rotation axes are orthogonal and the acceleration sensors are at least partially made of silicon and displaced by 180.degree. on the planar plate. An initial signal processing device is mounted directly on a circular planar plate on which the acceleration sensors are mounted. A light emitting diode is used to transmit the signals from the initial signal processing circuit to a signal processing circuit off the planar plate via a photodiode receiving device.

The present invention relates to devices for measuring an angular speed.
An angular speed measuring device is known having at least one acceleration sensor moving on a circular path about a first rotation axis. The acceleration sensor is structured to measure a Coriolis force, which results when the angular speed measuring device rotates about two additional rotation axes, the three rotation axes mentioned above being mutually orthogonal.
Published European Patent Application A2 405 152 describes an angular speed sensor, in which two acceleration sensors move on a circular path around a first rotation axis. By rotation about an additional axis, which is perpendicular to the first rotation axis, Coriolis forces are produced, which act on the acceleration sensors. The accelerations sensors are bendable piezoelectric beams, which are attached with one end to a rotatable axle. A mounting and alignment method described in this reference allows a particularly accurate attachment and alignment of the piezoelectric elements to the rotatable axle.
Published European Patent Application A1 369 352 describes a different type of acceleration sensor, which is constructed in part from silicon wafers.


A heat-dissipating fan structure comprises a frame having a through-hole. An air inlet and an air outlet are respectively defined in two ends of the through-hole. A support section is provided in an end of the through-hole and at least two sets of windings are engaged on the frame. An IC control member is mounted on the frame and electrically connected to the windings. A rotor comprises a shaft and plural blades, and a permanent ring magnet is mounted around the blades. An end of the shaft is rotatably received in the support section of the frame. A repulsive magnetic force is directly created between the permanent ring magnet and the windings of the frame to drive the rotor to turn.

1. Field of the Invention
The present invention relates to a heat-dissipating fan having a simplified structure and being capable of eliminating the magnetic resistance on the magnetically conductive path, thereby providing an improved rotational torque.
2. Description of the Related Art
FIG. 7 of the drawings illustrates a conventional heat-dissipating fan structure comprising a casing 90 having an axle seat 91 to which a stator bobbin 92 is mounted. The stator bobbin 92 comprises a winding 923 wound therearound, an upper pole plate 921, and a lower pole plate 922. Extended through the stator bobbin 92 is a metal axle tube 93 in which a bearing 94 is mounted for rotatably holding a shaft 96 of a rotor 95. A permanent magnet 97 is mounted to the rotor 95 and comprises a north pole and a south pole that cooperates with a magnetic force generated in the edge of the upper and the lower pole plates 921 and 922 for generating a repulsive force, thereby driving the rotor 95 to turn.
In such a conventional heat-dissipating fan structure, the stator bobbin 92 is complicated and thus troublesome to manufacture as it has a winding 923 wound between the upper pole plate 921 and the lower pole plate 923. In addition, since the stator uses a metal axle tube 93 to form a magnetically conductive path together with the upper pole plate 921 and the lower pole plate 922, magnetic resistance exists in the material per se, which, in turn, results in an increase in the overall magnetic resistance, and the rotational torque is adversely affected accordingly.
It is an object of the present invention to provide a heat-dissipating fan structure that has fewer elements and thus has a smaller volume for easy manufacture and processing.
Another object of the present invention is to provide a heat-dissipating fan structure that directly creates a mutual repulsive force between a magnetic field generated by the winding and the permanent magnet having a south pole and a north pole to thereby eliminate the magnetic resistance on the magnetically conductive path, thereby providing an improved rotational torque.
A heat-dissipating fan structure in accordance with the present invention comprises a frame having a through-hole. An air inlet and an air outlet are respectively defined in two ends of the through-hole. A support section is provided in an end of the through-hole and at least two sets of windings are engaged on the frame. An IC control means is mounted on the frame and electrically connected to the windings. A rotor comprises a shaft and plural blades, and a permanent ring magnet is mounted around the blades. An end of the shaft is rotatably received in the support section of the frame. A repulsive magnetic force is directly created between the permanent ring magnet and the windings of the frame to drive the rotor to turn.
Other objects, specific advantages, and novel features of the invention will become more apparent from the following detailed description and preferable embodiments when taken in conjunction with the accompanying drawings.

Sunonwealth Electric Machine Industry Co., Ltd.


A process for producing a sintered AlN ceramic body by mixing an organic solution comprising a hydrocarbon solvent and an organometallic compound with AlN powder to produce a slurry, removing the solvent from the slurry to form a mixture of organometallic compound and AlN, forming the mixture into a shape, and heating the shape in a non-oxidizing atmosphere to sintering temperature to obtain densification.

The present invention relates to a process for preparing a sintered body of aluminum nitride and more particularly, to a process for preparing aluminum nitride which uses an organoyttrium compound as a sintering aid and dispersant.
Aluminum nitride (AlN) possesses high thermal conductivity, electrical resistivity and a coefficient of thermal expansion compatible to silicon. In addition, AlN is a high strength ceramic material capable of maintaining its high strength characteristics even at high temperatures and extreme thermal shock. Because of these properties, AlN is used as a heat resistant material for high temperature applications and as a heat dissipating material for substrates of semiconductor devices.
An AlN sintered body is usually prepared by forming the ceramic powder into the desired shape and sintering at high temperatures. However, because of its highly covalent structure, it is very difficult to sinter AlN powders to full density without the addition of a sintering aid. Alkaline-earth metal compounds as well as rare-earth metal compounds are known as sintering aids for AlN. These compounds can react with oxides contained in the powder to form a liquid phase, which promotes particle rearrangement and grain growth as a result of a solution-precipitation mechanism. K. Komeya et al., in "Effects of Various Additives on Sintering of Aluminum Nitride", Translation of the Journal of the Ceramic Society of Japan, Vol. 89, No. 6, 1981, pp. 330-36, discloses that the addition of 5% by weight of Y.sub.2 O.sub.3 substantially improved the densification of AlN and attributes this improved densification to the formation of a nitrogen containing aluminate liquid in the system aluminum nitride-yttrium oxide.
The use of yttrium compounds as sintering aids for AlN is described in several publications. Shinozaki, et al., in "Sintering Behavior and Thermal Characteristics of Pressureless Sintered AlN with Y.sub.2 O.sub.3 Addition", 2nd Symposium on Basic Science of Ceramics, Yogyo-Kyokai, January 1984, found that the addition of at least 0.5% by weight of Y.sub.2 O.sub.3 not only enables good densification, but also makes it possible to form a product having a higher thermal conductivity than a product obtained without adding any such aid.
U.S. Pat. No. 3,833,389 issued Sep. 3, 1974, to Komeya et al., teaches that instead of using oxides of lanthanum, cerium, scandium, yttrium and yttrium aluminum garnet, or mixtures thereof, a material which is capable of producing one of the oxides under the sintering conditions can be used. For example, instead of using yttrium oxide, yttrium carbonyl (Y.sub.2 OC) or yttrium hydroxide (Y(OH).sub.3) may be used to form yttrium oxide prior to sintering.
U.S. Pat. No. 4,578,232 issued Mar. 25, 1986, to Huseby et al., discloses that the sintering aid, yttrium oxide, can be provided by means of a yttrium oxide precursor. The term yttrium oxide precursor means any organic or inorganic compound which decomposes completely at a temperature below about 1200.degree. C. to form yttrium oxide and a by-product gas which vaporizes away leaving no contaminants in the sintered body which would be detrimental to the thermal conductivity. Examples of these precursors are yttrium acetate, yttrium carbonate, yttrium oxalate, yttrium nitrate, yttrium sulfate and yttrium hydroxide.
The thermal conductivity of aluminum nitride is a function of its dissolved oxygen content and decreases with an increase in dissolved oxygen. Because aluminum nitride powder has an affinity for oxygen, especially when its surface is not covered by an oxide, it is necessary to remove the excess oxygen when high thermal conductivity is important. Aqueous solutions for the processing of AlN powder are not desirable since the powder will react with the water to liberate NH.sub.3 and form an Al.sub.2 O.sub.3 precursor such as AlOOH or Al(OH).sub.3, which increases the oxygen content of the powder. The sintering aids of the present invention are compatible with non-aqueous solutions and thus help to prevent the addition of excess oxygen to the AlN powder during processing.
A major problem with the use of sintering aids is the ability to uniformly distribute the aid prior to sintering. Most sintering aids are added as separate powders with the hope that mixing the powders will result in a uniform distribution. A need exists, therefore, for a process of uniformly distributing the sintering aid to obtain a sintered body having uniform chemical and electrical properties, in addition to high mechanical strength and high thermal conductivity.

Process for sintering aluminum nitride using organometallic compounds


A display device includes a display panel having a display region formed with a plurality of thin film transistors, a light emitting layer disposed in the display region, and a driver supplying a driving signal including a gate signal and a data signal to the thin film transistors. At least one voltage pad is disposed outside of the display region on the display panel to supply a reference voltage to the display region, a power generator generates the reference voltage, and a flexible film is connected between the voltage pad and the power generator to transmit the reference voltage. At least one of the driver and the power generator includes an external power input unit that receives external power.

1. Field of Invention
The present invention relates to a display device and a manufacturing method thereof, and more particularly, to a display device which comprises a panel cover to protect and support a display panel, and a manufacturing method thereof.
2. Discussion of the Background
The use of organic light emitting diode (OLED) technology in flat panel displays has recently attracted attention because it provides for flat panel displays that require low driving voltage, are thin and lightweight, have wide viewing angles; and have relatively short response times.
An OLED substrate includes a switching transistor disposed at a crossing of a gate line and a data line and a driving transistor connected to a voltage supply line through which a driving voltage is applied, thereby forming a pixel. Further, the OLED substrate includes a voltage supplying pad for supplying a common voltage corresponding to a reference voltage to a cathode electrode, and a driving voltage to a voltage supply line.
As the size of a display device increases and the number of pixels needed for high resolution increases, it becomes more difficult to fully supply the common voltage and the driving voltage to the pixels. Currently, to enhance the stability of power supply and the uniformity of the substrate, a printed circuit board (PCB) and a flexible printed circuit (FPC), which are provided separately from a driver and placed in a lateral side of the substrate, have been employed for supplying the common voltage or the driving voltage.
However, using a plurality of PCBs increases production costs because of the need to mount the PCBs. Also, the complicated structure of the PCBs may make it difficult to modularize the OLED substrate into the display device.

Display device with power generator on panel cover and manufacturing method thereof


A delegate-based event-driven programming model facilitates application development by allowing event handlers to be manipulated on an individual basis. In the delegate-based event-driven programming model, the recipient of an event need not be aware that is receiving the event because the event is treated as a call from a method. In addition, event handlers can be dynamically manipulated, such that recipients of events can be added or removed during runtime. Flexibility of event handling is improved as a result.

Events are an important part of component-based programming. An event is a component-issued notification that something of interest has occurred. For example, a program developer may use one, type of event to specify how the program should behave when the left mouse button is pressed while the mouse cursor is over a particular icon. The component issuing the event is known as an event source, while a component that receives the event is called an event listener. An object known as an event handler governs the particular behavior triggered by the event.
In the VISUAL BASIC® development system, commercially available from Microsoft Corp. of Redmond, Wash., a component can declare an event using the Event keyword and raise it using the RaiseEvent keyword, as illustrated by the following example:
Event MyEvent (ByVal i As Integer)Sub MyMethod( )RaiseEvent MyEvent(123)End SubAn event can be handled by declaring a field with a WithEvents modifier, initializing the field, and providing an event handler whose name is specially named. In the following example, a composite class handles events for two instances of the MyComponent class.
Public WithEvents a As MyComponentPublic WithEvents b As MyComponentPrivate Sub a_MyEvent(ByVal i As Integer)MsgBox "a raised MyEvent with param" & CStr(i)End SubPrivate Sub b_MyEvent(ByVal i As Integer)MsgBox "b raised MyEvent with param" & CStr(i)End SubPrivate Sub Class_Initialize( )Set a = New MyComponentSet b = New MyComponentEnd Sub
Event support in the VISUAL BASIC® development system is based on an event infrastructure provided by Object Linking and Embedding (OLE) and OLE Automation, which define certain interfaces that enable the management of events. These interfaces allow one component to handle events for a different component. In this system, events are implemented using interfaces. A component indicates what events it raises by publishing information about one or more source interfaces. A component handles events for an event source by implementing one or more of these source interfaces and indicating its interest in events on a per-interface basis.
While the Java language itself does not specifically support events, the JavaBeans standard uses an interface-based event model similar to that used in OLE and OLE Automation. This model differs from the OLE/OLE Automation model, however, in the ways in which connections are managed. The OLE/OLE Automation model uses connection point interfaces to manage relationships between event sources and event listeners, while the JavaBeans model uses interfaces known as design patterns. In the JavaBeans model, to enable connection of event handlers, an event source supplies an AddXxxListener method that takes a parameter of interface type XxxListener.
Interfaces are essentially groupings of events, such as mouse-related events. These groupings are arbitrary and static, i.e., fixed at the time of development. In development systems in which interfaces are used for event handling, the developer is not able to manipulate event handlers on an individual basis. For example, even if the developer is only interested in using a mouse button click event, the developer must still write event handlers for the other events in the interface in which the mouse button click event is packaged.
Typically event handlers are sparse; most components have at least one handled event, but most events are unhandled. This mismatch between mechanism and usage results in additional overhead in a number of dimensions. For example, when many events appear in a single interface, the additional overhead includes unnecessary size and performance costs. In the worst case scenario, a component must provide many actual event handlers when only one event handler actually does anything useful.
JavaBeans allows a developer to use multiple interfaces. Unfortunately, using interfaces to provide finer granularity does not alleviate this problem. Instead of a single interface with N events, a component could provide N interfaces, each with a single event. Such a system would result in one interface per event and one class per handled event. Because the number of components is large, the number of events is large, as is the number of event handlers. As a result, considerable storage resources, both on disk and in memory, may be consumed.
Another drawback of interface-based event systems is that they do not support true pluggability. To connect two components, the source of the events must be provided with an implementation of an event interface. However, even if a component implements a method that is "plug compatible" with an event from another component, it is not possible to wire the method and the event together directly. The sink component would have to implement the event interface required by the source component, a rather unlikely scenario. To complete the wiring of two components, "glue code" must be provided. Pluggability could be a significant building block in the construction of high-level development tools and/or end-user focused development tools that allow pre-built components to be wired together without the need for generation and compilation of "glue" source code.
Another drawback is that conventional interface-based event systems do not provide automatic support for multicasting of events. Because neither standard nor default multicast behavior is provided, components' support for multicasting of events varies arbitrarily. Some components support multicast, but others do not. Among those components that do support multicast, some multicast in the order in which event handlers were connected, others do the opposite, and still others multicast in other ways.
Further, existing interface-based event systems are brittle with respect to versioning. Arguments are typically specified in an "unpacked" format that essentially hardwires the source and listener together. Because the declaration of an event handler specifically names the arguments of the event, it is difficult, if not impossible, for an event source to change the behavior of the event, e.g., by supplying an additional parameter, without breaking existing clients.


A self-sealing end fitting includes a valve, an adaptor, and a connector. The valve may define a longitudinal axis and may include a first end portion, a second end portion, a flange disposed therebetween, and a central bore. The adaptor may have a first end portion surrounding at least the second end portion of the valve, and the connector may surround at least the first end portion of the valve. A portion of the connector, a portion of the flange, and a portion of the first end portion of the adaptor may define a pocket. The valve may be configured to move axially relative to the adaptor. In embodiments, a sealing surface of the flange may contact a corresponding sealing surface of the first end portion of the adaptor to form a first seal within the pocket, and the first seal may comprise a metal-to-metal seal.

Fluid couplings are commonly used in many industries for connecting sections of hoses with fittings. Some fluid couplings are "self-sealing" in that they automatically prevent fluid from escaping one side of the coupling upon disconnection. Such couplings can be referred to as "self-sealing end fittings," "self-sealing B-nuts," or "one side self-sealing couplings." Such fittings are typically used in hydraulic systems and can be used with operating pressures of up to 5000 psi. These fittings typically include a female end that can mate together with a male end (e.g., a standard male fitting) to form a seal and to permit fluid to flow freely from one section to the other (and/or vice versa). Fluid couplings may include a mechanism for connection and disconnection of the male and female ends with standard tools or, in other instances, a mechanism quick-disconnect mechanism to allow for connection and disconnection of the male and female ends without the need for any tools.
In some fluid distribution systems, the fluid is hazardous, unclean, flammable, and/or dangerous, making release into the atmosphere undesirable. During fluid distribution activities, such as, for example, and without limitation, routine maintenance of the fluid distribution systems, it may be desirable to limit fluid loss and/or release. Accordingly, it may be desirable to connect and disconnect the male and female ends of the couplings with limited and/or little to no release (i.e., spillage) of fluid.
To prevent such release, fluid couplings may be provided with a valve element that translates axially from a closed position to an open position upon connection of the male and female ends. Such fluid couplings may be referred to as "self-sealing," as the valve element can obstruct (or otherwise prevent) the fluid flow through the coupling upon disconnection of the male and female ends and/or from one or more sides of the connection.
Many industries, such as the aerospace industry, are requiring fluid couplings to have certain fire protection ratings. For example, some require the fluid couplings to be fire resistant for five minutes, and some require the couplings to be fireproof for fifteen minutes. Therefore, it may be desirable, among other things, to design a fluid coupling that is fire resistant and/or fireproof (per industry standards).
Fluid couplings typically use elastomeric seals to seal potential leak paths. However, during a fire, elastomeric seals may heat up (due to conduction of heat from surrounding elements) and could fail. Among other things, the instant disclosure seeks to improve upon the aforementioned challenges.


A stationary flywheel energy storage system mounted to rotate in a horizontal orientation. The system includes a motor/generator wherein the rotor is positioned externally of the stator. Magnetic bearings suspend the rotor at each end thereof. Each magnetic bearing comprises a single principal actuator which supports 80% to 99% of the gravity load at that end of the rotor. Additional minor actuators, are provided to suspend the remaining portion of the load, and to compensate for dynamic unbalances.

The present invention relates to electrical energy storage systems. Electrical utilities normally are engineered to have the capability of producing more electrical power than actually required in their normal peak demand periods. This capability of providing more power, commonly approximately 17% more power, is provided to cover emergency situations.
Power companies face the problem that peak demands have increased dramatically; and since 1985, continue to grow at a rate of 3% per year. It is projected the long period of excess capacity that began in 1974 will come to an end during the decade of 1990. Additionally, environmental concerns have inhibited the building of power plants that would increase the base load capabilities. Power companies have tended to deal with the foregoing problem by installing so called "peaking units" near the areas of large power demand. The peaking units are usually gas turbine-driven generators. Such generators have high capital costs, and additionally, fuel costs for gas turbines are also high.
Various solutions have been suggested to meet the foregoing problem. One solution is to provide an energy storage system of high-efficiency and compactness, and with characteristics that allow it to be installed almost anywhere and in a short time. Several sources have suggested that flywheel storage offers the foregoing desirable characteristics. One such proposal was that of R. F. Post and S. T. Post in the article entitled Flywheels in the December 1973 issue of Scientific American. Some time later in an article entitled Flywheels For Energy Storage appearing in Technology Review, November 1979 (Vol. 82, No. 2, p 32), Alan R. Millner discussed using flywheels for energy storage for peak load shaving on electric utility systems.
More recently U.S. Pat. No. 5,124,605 issued to Bitterly et al discloses a flywheel-based energy methods and apparatus. The Bitterly apparatus has the capacity of storing electric energy as kinetic energy and generating electric energy from the stored kinetic energy. Bitterly et al discloses a system having two flywheels which rotate counterclockwise to each other. The Bitterly flywheels are provided with magnetic bearings as well as liquid balancing bearings and perform within an evacuated, protective housing.
Magnetic bearings are well known in the art and basically comprise a system wherein rotating members are supported by electromagnets. The article entitled Design and Test of a Magnetic Thrust Bearing by Allaire, Mikula, Banaerjee, Lewis and Imlach in the Journal Of the Franklin institute, Vol. 326, No. 6, pp 831-847, 1989 provides an indication of the state of the art of a special type of magnetic bearing as early as 1989.
The present invention is directed to an improved electromagnetic .and magnetic bearing assembly for a stationary flywheel energy storage system. The term stationary refers to a system which is positioned in a given geographic location as contrasted to, for example, flywheel storage systems to be used with automobiles, trucks, buses, or space applications.

Flywheel storage system with improved magnetic bearings


A catalyst for partial oxidation of olefin, which comprises silver or silver oxide and an alkali metal or a compound thereof supported on an α-alumina carrier containing silicon or a compound thereof, wherein the silicon or the compound thereof exists at a position substantially identical to that of a particle of the alkali metal or the compound thereof, a preparation method thereof, and a process for preparing olefin oxide which comprises subjecting olefin to vapor-phase oxidation with a molecular oxygen-containing gas in the presence of the catalyst.

In the past, a lot of literatures have been introduced about a catalyst for producing ethylene oxide by vapor-phase oxidation of ethylene with molecular oxygen-containing gas, and a carrier thereof. For example, JP-A-55-145,677 discloses a production method of ethylene oxide consists of using a silver catalyst, in which silver and, if needed, further alkali metal component or alkaline earth metal component are supported on a nonacidic carrier, wherein total content of alumina, silica and titania is 99% by weight or more, and the metal content of each group of Va, VIa, VIII, Ib and IIb of the periodic table is less than 0.1% by weight as total amount of a metal oxides, and which does not show an acid color by the methyl red as indicator of pKa +4.8. In addition, there is proposed a catalyst for producing ethylene oxide (U.S. Pat. Nos. 5,077,256 and 5,395,812), in which silver and cesium are supported as catalyst components onto an α-alumina carrier wherein covering layer of amorphous silica is provided on the surface of the carrier.

Catalyst for partial oxidation of olefin, preparation method thereof, and process for preparing alkylene oxide


A tilt anvil assembly is disclosed which includes a center rod and a head assembly pivotally mounted to the center rod. The head assembly includes a housing, a post and an anvil plate. The head assembly is pivotally secured to the center rod and pivotal in relation to the center rod in discrete steps between a non-tilted position and a fully tilted position via a plurality of partially tilted positions. The head assembly is configured to maintain a partially tilted position.

1. Technical Field
The present disclosure relates generally to an anvil assembly which is suitable for use with a circular anastomosis stapler. More specifically, the present disclosure relates to an anvil assembly having a tiltable head which is suitable for use with a circular anastomosis stapler.
2. Description of Related Art
Circular anastomosis staplers which include an anvil assembly having a tiltable anvil head are known in the art. Such tiltable anvil heads have been disclosed in U.S. Publication No. 2010/0038401 to Milliman and U.S. Publication No. 2008/0230581 to Marczyk, the contents of which are incorporated herein by reference in their entirety. The tiltable anvil head normally includes a spring loaded tilting mechanism which tilts the anvil head to its maximum rotation degree as allowed by the stapler geometry. For instance, the tiltable anvil head normally has an operative position at which the anvil head is generally perpendicular to the axis of the stapler, and a fully tilted position at which the anvil head is generally aligned with the axis of the stapler. The tiltable anvil head is pivotable from the operative position to the fully tilted position, but is not able to be maintained at any intermediate positions therebetween. Currently, if excess tissues are placed under the anvil, e.g., when the anvil is manipulated through the colon/bowel or through the anastomotic ring, the excess tissue can inhibit the anvil from being tilted to its maximum rotation degree.
Based on the foregoing, a need still exists for an anvil head that may be partially tilted and maintained at an intermediate position between the operative and fully tilted positions.

EEA tilt top anvil with ratchet/locking mechanism


An improved volumetric batcher particularly suitable for a dosed feeding of a dishomogeneous and scarcely slidable as well as extremely fragile product, such as chamomile flowers, to be introduced in filter-bags. Several batching units placed side by side, provide operation with high-speed packing machines. Fed by a single container is the bottom of the container screw-feeders are provided to push the product in to a corresponding vertical loading conduit. A pneumatic piston in the loading conduit compress to a product in the batching chamber which is aligned with a hole passing through a fixed plate which supports the batcher. The batching chamber is located inside a mobile second plate of the batcher. When the second plate is in a loading position, the batching chamber is aligned with the hole and the loading circuit and in as opposed discharging position, the batching chamber is aligned with a second hole is the fixed supporting first plate, which hole serves for the passage of an ejecting piston, and a discharging hole of a fixed underlying third plate of the batcher.

It is known to pack products for infusions, such as tea, chamomile and the like, inside filter-bags. Recently there has increased and gained favour among the consumers a product called "filtro-fiore" in Italian (flower-filter in English), consisting of almost integral chamomile flowers which are packed, as much as possible intact to merit such a name.
This product is per se scarcely slidable, extremely fragile and dishomogeneous, as the various parts which compose a chamomile flower, and comprise the product, have physical characteristics, particle size and specific weight which are considerably different from each other.
Up to now a batcher designed by the same applicant has been adopted for the dosed filling of filter-bags in a packing machine of known type, which batcher proved to be relatively sufficient as far as both the quality of the product and the protection of the physical aspect thereof are concerned. The batcher is of the volumetric type, as it is not conceivable to employ batchers on a ponderal basis, each dosing being about 2 g in weight and the relative weighing having to occur at a rhythm of about 100 times per minute, with minimum deviations percent and therefore negligible ones in absolute value.
In the known batchers it was possible to overcome the problem of unreliable batcher filling, thus avoiding the so called "bridges" of material, due to both the dishomogeneity of the product and the dimensions thereof, and taken into account that a bud of chamomile with its stalk can have an overall length of 3.div.3.5 cm, thus involving, as a result of its arrangement, problems in filling the batcher with more product due to blockage of the passage. The problem was solved by adopting a mobile batching chamber inside which the filling takes place by a free fall of the product and a successive compression thereof by means of a pad actuated by a pneumatic cylinder. Such a batching chamber is formed in a mobile plate and is closed at its bottom by a small door which is adjustable in height to change the dose volume and can be opened each time for discharging the product. The batcher consists of both said mobile plate and a fixed supporting one which has a through hole with the same size of the batching chamber. When the latter is aligned with said through hole of the fixed plate, which hole is arranged coaxially with the vertical of a loading conduit through which said compressing pad slides, there occurs the filling of the batching chamber. The following stroke of the mobile plate, causes the clean cut of a core of product, due to the sliding of the upper edges of the batching chamber against the lower surface of the fixed plate above, while the upper surface of the mobile plate prevents the product from falling from both the loading conduit and the through hole of the fixed plate. The small door opens near the end of a stroke of the mobile plate, with consequent falling down of dosed product in a filter-bag below, which is submitted by the packing machine. The vertical loading conduit communicates with a hopper, which is continuously fed by a reservoir through a screw-feeder which, by drawing therefrom, raises the product up to the upper edge of said hopper, while anyhow needing additional means such as spirals at its sides, to overcome the difficulties of drawing due to the scarce smoothness of the product, but with the consequence of some damages to the integrity of the product itself.
In spite of the merits of the above briefly described device, the most considerable limit thereof remains a limited productivity, as it has a filling rate of about 100 filter-bags per minute. It has been found that, for rates higher than 110 cycles per minute, the gravity fall just after the opening of the small door with a slight advance with respect to the forming of a filter-bag, involves different fall times, mainly due to the dishomogeneity of each component. Thus it is not possible to increase the working rate of the batcher to have it coincident with the working rate of faster packing machines which theoretically could ensure a higher productivity.
Also the experimented hypothesis of employing a carousel of small containers placed between the batchers and a single packing station was found to be not practicable as, by using N intermediate containers, the batchers rate would positively be 1/N of the machine rate, but the transfer of the dose to the carousel and therefrom to a filling area, would have to take place in a very short time, less than 1/(N.times.100). The limit seems to be mainly due to the free fall of the product.
Thus an improved batching device has been conceived and forms the object of the present invention, which does not show the above mentioned drawbacks, as it has a filling rate which is, on the whole, higher and adequate to the working rate of already existing packing machines which are suitable to work at the same time, with high productivity, at many stations for filter-bags filling, without proportionally increasing the batcher working rate.

Volumetric batcher, particularly for chamomile flowers to be packed in filter-bags


The present invention discloses a three-dimensional micro-electro-mechanical-system sensor. The sensor includes movable first electrodes, plural movable second electrodes, plural fixed third electrodes, and plural fixed fourth electrodes. The first electrodes and their adjacent third electrodes form at least one first capacitor and at least one second capacitor, and the second electrodes and their adjacent fourth electrodes form at least one third capacitor. The capacitance change of the first capacitor reflects the displacement of the proof mass along a first axis, the capacitance change of the second capacitor reflects the displacement of the proof mass along a second axis, and the capacitance change of the third capacitor reflects the displacement of the proof mass along a third axis. The first, second, and third axes define a three-dimensional coordinate system.

1. Field of Invention
The present invention relates to a three-dimensional Micro-electro-mechanical-system sensor, in particular to such a MEMS sensor which integrates in-plane electrodes with out-of-plane electrodes along a vertical direction.
2. Description of Related Art
MEMS devices are used in a wide variety of products, of which one application is capacitance-type sensors, such as accelerometer, microphone, etc. There are two types of such sensors, i.e., in-plane sensors and out-of-plane sensors. The former ones are used to sense a capacitance variation in a horizontal direction (x-y plane), and the latter ones are used to sense the capacitance variation in a vertical direction (z axis). With respect to in-plane sensors and methods for making such sensors, prior art U.S. Pat. Nos. 5,326,726; 5,847,280; 5,880,369; 6,877,374; 6,892,576; and U.S. publication No. 2007/0180912 disclose several examples. With respect to out-of-plane sensors and methods for making such sensors, prior art U.S. Pat. Nos. 6,402,968; 6,792,804; 6,845,670; 7,138,694; and 7,258,011 disclose several examples. However, these prior art references do not disclose a sensor capable of detecting the capacitance variations in three dimensions.
In view of above, the present invention overcomes the foregoing drawback by providing a three-dimensional Micro-electro-mechanical-system sensor which integrates in-plane electrodes with out-of-plane electrodes along a vertical direction. Thus, the sensing function of the sensor is improved, and the area of the MEMS device is reduced.


Polar thermoplastic polyolefin blends are provided which are flexible and are particularly useful in replacing polyvinyl-chloride sheeting used as liners, folders, etc. The blends comprise, in general, a non-polar thermoplastic polyolefin, a polar ethylene copolymer, and an acid grafted olefin polymer as a compatibilizing agent, all of which are chlorine-free.

1. Field of Invention
This invention relates to polyolefin compositions and more particularly to such compositions which are flexible and polar, and to shaped articles made from them.
2. Background Discussion
Polyvinyl chloride (PVC) sheets have been on the market for many years and have been the standard liner material in the housing industry. PVC sheets are characterized by being flexible over a variable temperature range, heat-sealable, and oil-resistant. However, with the trend toward a chlorine-free environment, there is a need for a PVC sheeting alternative. Ethylene/propylene/diene monomer (EPDM) rubbers are alternatives, but these are difficult to seal. Thus, there is a need for PVC-free sheets which are thermoplastic and heat-sealable, halogen-free and flexible.

Flexible polar thermoplastic polyolefin compositions


A tool handle construction incorporating a unitary inlet-exhaust assembly, allowing economies of construction.

The field of art to which this invention pertains includes inlet-exhaust construction incorporating a muffler on pneumatic hand tools.
The majority of commercially available pneumatic hand tools include a muffler of sorts. These mufflers are usually used in tools having an exhaust extension or the like whereby the muffler can be accommodated, for instance, those shown in U.S. Pat. Nos. 3,880,245 and 3,299,781. Another approach to the problem includes U.S. Pat. No. 3,823,795, where the exhaust air is directed forwardly, and space is provided in the top of the handle, above the hand grip area, for muffling.
In the first example, extensions on the exhaust passage are bulky and expensive and up until the present invention, utilized separate passages throughout the length of the handle for inlet and for exhaust. In the second example, in addition to the space requirement between the operators hand hold and the motor, the forwardly directed air is undesirable, providing an opportunity to mark a workpiece with the lubricant commonly included in the air supply to pneumatic tools.


An apparatus is proposed which serves the purpose of controlling the exhaust gas recirculation quantity and the injection quantity in auto-igniting internal combustion engines. In this apparatus, an arbitrarily actuatable throttle valve is provided in the intake manifold, downstream of which a control pressure is withdrawn from the intake manifold and used to actuate a pneumatic adjustment device which determines the position of the quantity adjustment device of a fuel injection pump. This control pressure simultaneously serves to actuate an exhaust gas recirculation valve and acts counter to the force of a restoring spring in the work chamber of a second pneumatic adjustment device. Thus, during idling and at full-load of the engine, little exhaust gas or none at all is recirculated and at medium-load and rpm the exhaust gas recirculation quantity is controlled in accordance with the induced air quantity, that is, according to load and rpm; at the same time, in the same sense, the suction pressure which actuates the quantity adjustment device is a standard for load and rpm, that is, for the induced air quantity. Thus with increasing suction pressure less fuel is injected, and more exhaust gas is recirculated, and at a desired high load level the power output of the engine is not impaired by exhaust gas recirculation.

The invention relates to a control apparatus. In a known control apparatus of this kind, in order to maintain a very precise ratio of air to fuel in an auto-igniting internal combustion engine, the recirculated exhaust gas quantity is controlled in a very expensive manner in that the recirculated exhaust gas quantity, after precise apportionment of the air quantity in relationship to the injected fuel quantity, comprises the remnant charge of the combustion chambers of the engine.
An exhaust gas recirculation valve control apparatus is also known in which the control pressure for the pneumatic adjustment device of the exhaust gas recirculation valve is a mixture of the pressure prevailing in the Venturi restriction of a carburetor and the pressure prevailing downstream of the throttle valve of the carburetor. This apparatus thus makes use of a known carburetor and is thus restricted to use in externally ignited internal combustion engines. The control pressure can be modified by means of throttles in the lines leading off from the pressure withdrawal points in such a manner that the recirculated quantity of exhaust gas corresponds approximately to particular requirements of the engine at various operational points.
Another new apparatus for setting a desired exhaust gas recirculation rate in accordance with the air quantity induced by the carburetor has a slit-like cross section in the pivoting range of the throttle valve, which cross section is also partially opened toward the intake manifold upstream of the throttle valve when the throttle valve is closed. In accordance with the extent to which the throttle valve is opened, a control pressure is attained in the work chamber of a pneumatically functioning exhaust gas recirculation valve which communicates with the slit-like cross section which pressure varies in accordance with the extent of the throttle valve opening and with the underpressure prevailing downstream of the throttle valve. In order to obtain proper proportions of recirculated exhaust gas, the cross section of the slit-like opening can be appropriately controlled. This apparatus as well relates to exhaust gas recirculation in externally ignited internal combustion engines and in particular engines which are supplied with operational mixture by carburetors.

Apparatus for controlling the recirculated exhaust gas quantities and the injection quantity in auto-igniting internal combustion engines