An organic light-emitting device including a first electrode, a second electrode facing the first electrode, and an organic layer including an emission layer between the first electrode and the second electrode, wherein the organic layer includes a first compound and a second compound, the first compound is selected from compounds represented by Formula 1, and the second compound is selected from compounds represented by Formula 2:

1. Field
One or more aspects of example embodiments of the present disclosure are related to an organic light-emitting device.
2. Description of the Related Art
Organic light-emitting devices are self-emission devices that have wider viewing angles, higher contrast ratios, and shorter response times compared to devices of the related art. In addition, OLEDs may have better brightness, driving voltage, and response speed characteristics, and the ability to produce full-color images.
An organic light-emitting device may include a first electrode on a substrate, and a hole transport region, an emission layer, an electron transport region, and a second electrode sequentially positioned on the first electrode. Holes provided from the first electrode may move toward the emission layer through the hole transport region, and electrons provided from the second electrode may move toward the emission layer through the electron transport region. Carriers (such as holes and electrons) may recombine in the emission layer to produce excitons. These excitons change (e.g., decay or transition) from an excited state to a ground state to thereby generate light.

Abstract: An organic light-emitting device including both compounds may exhibit high heat resistance and high durability, as well as a long lifespan and high efficiency.


An improved dishrack for supporting dishware includes multiple subassemblies which are attached to a frame. Each of the subassemblies includes a pair of length wires to which multiple peg wires are attached. The peg wires have peg ends which extend upwardly to help support dishware. The dishrack includes fewer intersection points and thereby traps less dirt and facilitates washing action. A more efficient method of manufacturing dishracks includes the steps of welding wires to form peg mat ladders, forming the peg mat ladders into subassemblies, and attaching the subassemblies to a frame. An apparatus for making a dishrack includes a welding jig, which forms peg ladders, and a forming die, which transforms the peg ladders into subassemblies from which the dishrack is made.

Typical dishrack structures include a rectangular frame with wires which run from front to rear and side to side. The intersection points of these wires are generally welded together to form a substantially flat, welded mesh mat. Upright, peg wires are welded to the mesh mat to provide dishware support. The mesh mat with welded upright pegs is often bent or folded so that the mesh mat includes base portions tilted at various angles from each other. These angled base portions create tilted reference planes on which the dishware may be more easily loaded. These typical current dishrack structures suffer from numerous problems and disadvantages. For example, the numerous intersecting points of the crossing wires of the mesh mat catch and collect soil which runs off from the dishware during and after washing. The intersecting points of the welded mesh mat also block the water which is spraying and flowing when the dishrack is used in a dishwasher, thereby limiting the effectiveness of the washing action of the dishwasher. This is particularly true when multiple dishracks are vertically stacked, as in most dishwashers. This limiting of the washing action inevitably and undesirably leads to dishware remaining dirty or spotted even after a dishwashing cycle.
Another disadvantage of typical dishracks grows out of the needlessly complicated and time-consuming process of manufacturing such dishracks. Numerous front-to-rear and side-to-side wires must be held in position by locating devices and then welded together, individual peg wires must be attached to the wires, ends of the peg wires must be trimmed, and the resulting structure must be folded to form the dishrack structure. This process for a typical dishrack thus requires manipulating many pieces of wire and performing several operations on each of these wires.
An additional disadvantage of this manufacturing process is the difficulty in altering dishrack structures to meet varying design requirements. The typical manufacturing process for a given dishrack configuration uses complicated and costly welding jigs to locate and weld the numerous wires to each other to form a mesh mat. Adjusting the location of the wires in this process cannot be done without significant retooling expense. In addition, an elaborate and costly forming die takes the welded mesh mat and forms it into the particular dishrack configuration desired. The dishrack configuration cannot be altered without expensive alteration to, or replacement of, the forming die.
In light of the above, there is a significant need for a dishrack structure without numerous intersecting points which inhibit washing action and accumulate soil. There is likewise a need for a dishrack which can be manufactured in a more efficient and simplified manner. A dishrack design is also needed which can be altered without entailing significant retooling costs.

Dishrack and method and apparatus for making same


A semiconductor device capable of high-voltage operation includes a semiconductor substrate, a first well region, a second well region, a first gate structure, a first doped region, a second doped region, and a second gate structure. The first well region is formed in a portion of the semiconductor substrate. The second well region is formed in a portion of the first well region. The first gate structure is formed over a portion of the second well region and a portion of the first well region. The first doped region is formed in a portion of the second well region. The second doped region is formed in a portion of the first well region. The second gate structure is formed over a portion of the first gate structure, a portion of the first well region, and a portion of the second doped region.

Field of the Invention
The present invention relates to integrated circuits (ICs), and in particular to semiconductor devices capable of high-voltage operation and methods for forming the same.
Description of the Related Art
Recently, as demand has increased for high-voltage devices such as power semiconductor devices, there has been an increasing interest in research on high-voltage metal-oxide-semiconductor field effect transistors (HV MOSFETs) applied in high-voltage devices.
Among the various types of high-voltage metal-oxide-semiconductor field effect transistors (HV MOSFETs), semiconductor devices such as lateral double diffused metal-oxide-semiconductor (LDMOS) devices are often used.
However, with progress being made in semiconductor fabrication, the breakdown voltage of high-voltage MOSFETs for high-voltage devices needs to be increased further. Thus, a reliable high-voltage MOSFET for high-voltage devices having an increased breakdown voltage is needed to meet device performance requirements as the needs in semiconductor fabrication of high-voltage devices continue.

Semiconductor device capable of high-voltage operation


The present invention is directed to a heat-sealable propylene-based polymer composition comprising a propylene polymer composition including a propylene polymer component and propylene/ethylene random copolymer component; an ethylene/α-olefin random copolymer; and a soft propylene polymer composition. The present invention also provides a heat-sealable film using the composition and a packaging bag comprising the film. The heat-sealable film of the present invention has high heat-seal strength, with little decrease in heat-seal strength even after heat treatment. The heat-sealable film also has excellent blocking resistance, rigidity and low-temperature impact resistance.

From the viewpoints of diversification of food culture, shortening of cooking time and demand for convenience, it has become frequent that so-called retort pouch food obtained by introducing previously cooked food into a pouch, sealing the pouch and subjecting it to pressing/heating sterilization is purchased, the retort pouch food with the pouch is heated in hot water when necessary and the contents are taken out of the pouch and taken as a meal. Such retort pouch foods have begun to spread not only for usual home use but also for business use, and therefore, packaging materials capable of packaging a large quantity of foods at once have been desired.
Such retort pouch foods are subjected to room-temperature preservation over a long period of time or occasionally subjected to refrigeration/freezing preservation, and therefore, films that become their packaging materials are required to have high heat-seal strength and low-temperature impact resistance so that they should not be broken from the heat seal parts. Moreover, after packaging the retort pouch foods and sealing the packaging materials, the retort pouch foods are subjected to retort sterilization treatment in a high-temperature high-pressure pot at a temperature of about 100 to 140° C., and therefore, also from the viewpoint of quality control of foods, heat resistance of such a level as is capable of enduring the treatment at the heat seal parts and retention of heat-seal strength are required for the packaging materials.
In order to prevent decrease in heat-seal strength after heating/sterilization treatment such as retort treatment even if the degree of prevention is slight, there have been made a large number of proposals, such as a method of using a propylene/α-olefin block copolymer constituted of 95 to 70% by mass of polypropylene block units and 5 to 30% by mass of elastomer block units for a heat-sealing layer (e.g., patent document 1) and a propylene-based polymer composition obtained by adding a specific ethylene/α-olefin random copolymer component (C) to a propylene polymer component (A) and a propylene/α-olefin random copolymer component (B) (e.g., patent document 2).
Even if the above propylene-based polymer composition or the like is used, however, decrease in heat-seal strength after heating/sterilization cannot be inhibited in some cases.                Patent document 1: Japanese Patent Laid-Open Publication No. 2000-255012        Patent document 2: Japanese Patent Laid-Open Publication No. 2003-96251

Heat-sealable propylene-based polymer composition, heat-sealable film, and uses thereof


A design structure for tuning an integrated circuit design holds a reference clock signal constant across the integrated circuit design and, while the reference clock signal is held constant, optimizes transistors forming a register within the integrated circuit design and thereafter optimizes transistors forming one or more clock buffers coupled to the reference clock signal.

1. Technical Field
The present invention relates in general to a design structure, and more specifically to a design structure for tuning transistors in an integrated circuit design.
2. Description of the Related Art
The design of modern digital integrated circuits, which contain millions of transistors, is a complex task. One of the important design steps is optimization, also referred to as circuit tuning. In the tuning step, the optimal size of each transistor in the circuit is determined. Wider transistors are generally capable of handling increased electrical current, which leads to faster circuits and greater power dissipation. However, wider transistors also consume more physical area and place a heavier burden on the previous stage of logic. Determining the optimal size for each transistor yields tremendous benefits, but since an optimal size must be calculated for each individual transistor, the task can be very complex and time consuming.
Traditional optimization of electronic circuits is a manual, iterative, tedious, and error-prone task. In contrast, automated tuning, which utilizes software implementing sophisticated numerical algorithms, improves performance and increases designer productivity. Static circuit optimization implies the determination of optimal transistor and wire sizes, on a static timing basis, while simultaneously taking into account all paths through the logic. The advantages of static optimization include increased designer productivity, since an optimal circuit is automatically determined; higher quality circuits, e.g. faster, smaller, and/or lower power consumption; and the fact that all possible paths through the logic are simultaneously considered.
Current automated transistor tuning tools, such as IBM's EinsTuner™, play a key role in the circuit design process. Automated transistor tuning tools take many constraints, such as robustness, speed, timing constraints, area, input loading, and rise and fall time limits, into account to render practical tuning results. However, current automated transistor tuning tools do have limitations. Specifically, register components are not tunable by transistor-level tuning tools. This limitation is due to the inclusion of local clock buffers, also known as LCBs, inside the macro paths (i.e., schematics) and the register flip-flop and latch cells of electronic circuits. Local clock buffers are typically designed using components from standard libraries that comply with specific loading rules in order to ensure a common clock arrival and clock skew reference among all registers in the circuit. If clock arrival times are not consistent among all registers, problems (e.g., early and late timing) will arise during the operation of the circuit. Consequently, the present invention recognizes that a method and system for tuning register components and optimizing local clock buffers would be a welcome improvement.

Structure for automated transistor tuning in an integrated circuit design

International Business Machines Corporation


When a call is on hold due to an operating input from a key input unit, a music signal processing unit plays back music stored in a memory card and transmits it as a holding tone via a audio signal switching unit and a wireless signal processing unit to a party on the other end of the line, so that a portable telephone capable of providing music of high tone quality and superior general quality as the holding tone to the party on the other end of the line placed on hold with no addition of any new device is provided.

1. Field of the Invention
The present invention relates to a portable wireless communication apparatus provided with a diversity of ringing tones, i.e., tones indicating incoming calls, and holding tones, and particularly relates to a portable wireless communication apparatus with a function of music playback which enables prestored music data to be used as the holding tone during a call.
2. Description of the Related Art
Portable telephones available today include models that are designed to use one of harmony melodies stored in memory means as a ringing tone that rings upon receiving a call. In this case, the melodies stored in the memory means can be selected freely from a plurality of tunes prestored at the time of purchase, a plurality of tunes downloaded through communication to the outside, and a plurality of tunes composed by individuals. Herein, a harmony melody means a melody provided with chordal harmonies including a plurality of level tones.
Some portable telephones even go so far as to employ such a harmony melody used as a ringing tone as a holding tone, when holding the line, to be delivered to a party on the other end of the line, and the holding tone itself has an increased freedom of tune selection, with an improvement of its tone quality. Nonetheless, inasmuch as the memory capacity of storing the holding tone has its bounds, limits are set on the number of tunes memorized and the length of a tune, while there are available other portable telephones having an external memory, in which music is stored, functioning as a portable playback system as well.
As described above, conventional portable telephones enable the harmony melodies to serve as the holding tone as well as the ringing tone. Despite considerable improvements made in the selection of tunes and the quality of sound by utilizing the harmony melodies for the holding tone and the ringing tone, there are still problems of limitations imposed on the number of tunes and the length of performance of a tune storable in a built-in memory.
Accordingly, there has been a need for providing, with a relatively simple process of utilizing a tune stored in an eternal memory as a holding tone and/or a ringing tone, a portable telephone which can obviate the aforementioned problems and which can deliver to the party on the other end of the line while on hold, without adding any new special device, music of high tone quality and superior general quality as the holding tone. In addition, there has been another need for providing a portable telephone which can deliver music of high tone quality and superior general quality as the ringing tone, without adding any new special device.

Portable wireless communication apparatus with the varied hold tone


A system for transient over voltage protection of a three-phase transformer. Two surge arresters are series connected across each winding of the transformer and the center point connection of the two surge arresters is electrically connected to a middle location of the winding. Three additional surge arresters are electrically connected from each phase to ground in the case of either a delta or Y connected transformer; and/or connected from a neutral point to ground in the case of a Y connected transformer. The system allows for all of the surge arresters to be packaged as an integrated surge arrester system to minimize induced transient over voltages and high stresses on the transformer winding due to internal resonances.

Dry transformers are commonly used in medium voltage power systems and vacuum type circuit breakers are often utilized in connection with dry transformers. Vacuum circuit breakers could, during certain conditions, cause over voltage conditions when used for operating the transformer. These over voltages could cause transformer insulation failure when transient over voltage protection is not installed. Common transient over voltage protection includes surge arresters and oil-filled surge capacitors and damped surge capacitors (RC-snubbers).
One problem with the use of vacuum circuit breakers is that induced transient over voltages can be induced. This is especially the case when vacuum circuit breakers are opened with inductive loads attached to the system at phase angles causing multiple re-ignitions. Opening during the transformer inrush current or during a short circuit on the secondary side of the transformer are other examples of "inductive loads" not commonly thought of. Even though surge arresters may be utilized to limit transient voltage amplitudes at the point of installation, high stresses could be reached inside the transformer winding due to internal resonances.
Additionally, dry type transformers are now being used so as to avoid the problems associated with oil-filled transformers typically used in conventional medium voltage systems. Oil filled transformers present unique problems that dry transformers do not, for example, possible leakage of the oil creating environmental issues, and the possibility that the oil might catch fire such that, explosion proof transformers are often preferred today. Accordingly, when utilizing dry transformers it is of course highly undesirable to utilize oil filled surge capacitors, which present the same or similar problems discussed in connection with oil filled transformers although the oil quantity is much less for the capacitor compared to the transformer.
U.S. Pat. No. 4,604,673 (the '673 patent) discloses a distribution transformer that includes a surge protection device for protecting against external lightning strikes. For example, the '673 patent describes an oil filled transformer equipped with a varistor stack mounted within the oil tank and connected between a midpoint of the winding, and two ends of the winding. However, the '673 patent fails to disclose or teach a protection system that is capable of protecting against internal resonances developed within a dry type three phase transformer. Rather, the '673 patent is directed toward protecting oil filled single phase overhead (pole-type) distribution against external lightning strikes. Col. 1, II. 16-19 and 62-66. Likewise, the single phase system disclosed in the '673 patent could not be adapted in a three phase delta connected transformer. However, this is not an issue for the system taught in the '673 patent as it is a single phase system utilizing an oil filled transformer.

System for protection of dry type transformers


A gas turbine engine assembly includes a turbine shroud having a carrier segment and adjacent blade track segments. The carrier segment is arranged around a central axis of the gas turbine engine and the blade track segments are supported by the carrier segment. The turbine shroud segment further includes a retainer that is configured to locate the blade track segments radially relative to the central axis of the gas turbine engine.

Gas turbine engines are used to power aircraft, watercraft, power generators, and the like. Gas turbine engines typically include a compressor, a combustor, and a turbine. The compressor compresses air drawn into the engine and delivers high pressure air to the combustor. In the combustor, fuel is mixed with the high pressure air and ignited. Products of the combustion reaction in the combustor are directed into the turbine where work is extracted to drive the compressor and, sometimes, an output shaft, fan, or propeller. Left-over products of the combustion reaction are exhausted out of the turbine and may provide thrust in some applications.
Compressors and turbines typically include alternating stages of static vane assemblies and rotating wheel assemblies. The rotating wheel assemblies include disks carrying blades around their outer edges. When the rotating wheel assemblies turn, tips of the blades move along blade tracks included in static shrouds that are arranged around the rotating wheel assemblies. The blade tracks block gasses from passing over the blades without interaction with the blades.
Some blade tracks are formed by a number of blade track segments arranged circumferentially adjacent one another to form a hoop around the blades of the rotating wheel assemblies. An annular clearance gap may be formed between the tip of the blades and the blade track segments. A size of the clearance gap may be controlled to block gasses from passing between the blades and the blade track segments to increase the efficiency of the gas turbine engine.

Turbine shroud ring for a gas turbine engine with radial retention features

Rolls-Royce North American Technologies Inc.


Reduction in the reliability of a seal portion is prevented. The reduction is caused by a light shielding portion formed on the seal portion of a TFT substrate to hamper curing an ultraviolet curable sealing material. A sealing material has a two-layer structure of an ultraviolet curable sealing material that is an inner sealing material and a thermosetting and ultraviolet curable sealing material or a thermosetting sealing material that is an outer sealing material. A light shielding portion is formed on a TFT substrate under the outer sealing material, and is not formed on the TFT substrate under the inner sealing material. When ultraviolet rays are applied from the TFT substrate side, the inner sealing material is cured in a short time. The outer sealing material is then cured by heating. Thus, the overall seal portion can be sufficiently cured, and a highly reliable seal portion can be formed.

1. Field of the Invention
The present invention relates to a display device, and to a liquid crystal display device that secures the reliability of sealing and prevents liquid crystals from being contaminated while the device is provided with a narrow picture frame.
2. Description of the Related Art
A liquid crystal display device is provided with a TFT substrate and a counter substrate. The TFT substrate has pixels including a pixel electrode, a thin film transistor (TFT), and the like in a matrix configuration. The counter substrate is disposed opposite to the TFT substrate, and has a color filter and the like formed at a location corresponding to the pixel electrode of the TFT substrate. Liquid crystals are sandwiched between the TFT substrate and the counter substrate. The transmittance of light caused by liquid crystal molecules is controlled at every pixel to form images.
Since the liquid crystal display device is flat and light weight, the use is growing in various fields. Small-sized liquid crystal display devices are widely used for a mobile telephone, a DSC (Digital Still Camera), etc. The small-sized liquid crystal display device is strongly demanded that the outer shape be reduced while securing a predetermined display region. This means that a distance between the end portion of the display region and the end portion of the outer shape, a so-called picture frame, is reduced. In this case, the area of an encapsulation portion that encapsulates liquid crystals becomes small to cause a problem of securing the reliability of a seal portion.
The liquid crystals are encapsulated with a sealing material. In the case where liquid crystals are filled by a one drop fill (ODF) process, liquid crystals are dropped before curing the sealing material. Such a problem arises in that before a sealing material is cured, materials in the sealing material spread in the liquid crystals, and the quality of the liquid crystals is degraded. The following configuration is described in Japanese Patent Application Laid-Open Publication No. Hei 10-123537. In order to prevent an uncured sealing material from spreading in liquid crystals, an elastic seal is used for an encapsulation material to encapsulate liquid crystals. This elastic seal only serves to confine liquid crystals, and is not responsible for bonding a TFT substrate to a counter substrate. A thermosetting sealing material or an ultraviolet (UV) curable sealing material is formed on the outer side of the elastic seal to bond a TFT substrate to a counter substrate.
Moreover, a configuration is described in paragraph "0005" and FIG. 11 in Japanese Patent Application Laid-Open Publication No. Hei 10-123537 in which a UV curable seal is formed on the inner side of the elastic seal and a thermosetting seal is formed on the outer side. However, a gap is provided between the seal on the inner side and the seal on the outer side. Furthermore, no description is provided on the relationship between the UV curable seal and a light shielding portion formed on the TFT substrate.
A configuration is described in Japanese Patent Application Laid-Open Publication No. Hei 11-64862 in which a thermosetting bonding layer is formed as a sealing material on the inner side and a bonding layer made of a two-liquid adhesive resin or an ultraviolet curing resin is formed on the outer side of the thermosetting bonding layer. An object of Japanese Patent Application Laid-Open Publication No. Hei 11-64862 is to prevent a phenomenon in bonding a TFT substrate to a counter substrate using a thermosetting resin in which thermal strain deforms the substrates and a gap between the TFT substrate and the counter substrate is changed.


This invention includes a circuit that approximates the thermal behavior of a fuse or other electronic device that is coupled in series with the circuit. In one preferred embodiment, the circuit protects a fuse coupled in series with a rechargeable battery from clearing during soft short conditions. Thus, when the instantaneous current is temporarily above the current rating of the fuse, yet the root mean squared current is below the current rating of the fuse, the circuit works to estimate the heating of the fuse element and limit the current to a root mean squared value that is less than the current rating of the fuse. One embodiment includes a programmable comparator that actuates a counter which, in turn, increments to estimate heating of the element when the current exceeds a predetermined threshold.

This invention relates generally to electronic circuits incorporating fuses coupled in series, and the preferred embodiment relates more specifically to protection circuits in battery charging circuits incorporating series fuses for circuit protection.
Electronic circuits often employ fuse elements for protection. When too much current runs through a fuse, i.e. a current in excess of the rating, the soft fuse material vaporizes, thereby opening the circuit. For example, a hair dryer may include a fuse that protects the hair dryer from over-current damage. If one accidentally drops a hair dryer in a sink, the water may create a path for excessive current to flow. This could cause the dryer to stop working. To avoid damage to the dryer, a fuse in series with the power cord will clear, thereby disconnecting the hair dryer from the wall outlet.
Rechargeable batteries often use fuses to protect the cell. When rechargeable batteries, like those made with lithium, if they are overcharged they can release gasses at high temperatures. When such a situation occurs, reliability of the battery may be compromised.
Consequently, rechargeable battery pack manufacturers often place fuses (in addition to battery protection circuits) in the battery packs. If a temporary problem occurs, the battery protection circuit, which includes transistor switches, will open the circuit to prevent an over-current situation. However, in the event that a catastrophic condition of battery protection circuit failure occurs, the fuse will clear thereby providing another layer of protection.
The problem with such fuses is that they are often non-replaceable. In other words, manufacturers often solder them to a circuit board that is inaccessible to the end user. Thus, when the fuse clears, the battery is protected, but it is also rendered useless as the battery cell is now disconnected from the terminals of the battery pack. Occasionally, a short current spike may cause the fuse to inadvertently blow. This is known as xe2x80x9cnuisance trippingxe2x80x9d. If a nuisance trip occurs, the user must throw the battery away and buy another one, even though the cell and circuitry may be imperfect condition. With the cost of some batteries for cellular phones exceeding one-hundred dollars, there is thus a need for an improved protection circuit to prevent nuisance tripping in the series fuse.

Overcurrent protection for the series fuse


An optimum data arrangement is provided such that each apparatus can efficiently deal with image data encoded using discrete wavelet transform. For that purpose, an image processing apparatus includes an input device for inputting first entropy encoded data. The first entropy encoded data is obtained by peforming entropy encoding of transform coefficients of a first data arrangement. The transform coefficients of the first data arrangement are obtained by performing wavelet transform of a predetermined image in each first unit. The apparatus also includes an arrangement changing device for performing entropy decoding of the first entropy encoded data, and changing the obtained transform coefficients of the first data arrangement into transform coefficients of a second data arrangement obtained by performing wavelet transform of the predetermined image in each second unit, and an entropy encoder for generating second entropy encoded data by performing entropy encoding of the transform coefficients of the second data arrangement.

1. Field of the Invention
The present invention relates to an image processing apparatus and method for encoding/decoding an image, and a storage medium storing this method.
2. Description of the Related Art
In accordance with recent remarkable developments in computers and networks, various kinds of sets of information, such as character data, image data, voice data and the like, are stored within a computer or transmitted between networks.
Among these data, an image, particularly a multivalue image, includes a very large amount of information. Hence, when storing/transmitting an image, the amount of data is very large. Accordingly, when storing/transmitting an image, high-efficiency encoding is adopted in which the amount of data is reduced by removing redundancy of the image, or changing the contents of the image to such a degree that degradation of the picture quality is hardly recognized visually.
A JPEG (Joint Photographic Experts Group) method recommended by ISO (International Organization for Standardization) and ITU-T (International Telecommunication Unionxe2x80x94Telecommunication Standardization Sector) is widely used as an internationally standardized high-efficiency encoding method. The JPEG method is based on discrete cosine transform, and has a problem such that block-shaped distortion is generated when increasing the rate of compression.
On the other hand, in apparatuses for inputting or outputting images, a higher rate of compression than in conventional cases is being requested, because higher resolution is required in order to improve the picture quality. In order to deal with such a request, an encoding method utilizing discrete wavelet transform has been proposed as a transform method different from the above-described discrete cosine transform.
The encoding method utilizing discrete wavelet transform has an advantage such that block-shaped distortion causing a problem in the above-described method utilizing discrete cosine transform seldom occurs.
Usually, in the above-described compression encoding method utilizing discrete wavelet transform, processing of transforming an image to be encoded is executed after storing the image in a frame memory for one picture frame, and data for one picture frame after being transformed is stored in the same frame memory or in another frame memory.
The frame memory used in this case can be easily secured in a system based on a computer, but is difficult to secure in a relatively inexpensive peripheral apparatus, such as a digital camera, a scanner, a printer or the like, due to limitations in circuit scale.
In such a case, the present invention is advantageous because an image to be encoded or compressed data of the image is desirably subjected to sequential transform processing (compression encoding) in units smaller than one picture frame, instead of being stored in a frame memory.
In consideration of various types of editing processing to be performed for an image to be encoded or encoded data, it is desirable to divide the image to be encoded or the encoded image into units smaller than one picture frame, particularly, in units of a block, comprising nxc3x97m pixels or the like, so as to easily assign a region in two-dimensional directions.
It is an object of the present invention to solve the above-described problems.
It is another object of the present invention to provide an optimum data arrangement for image data encoded using discrete wavelet transform so as to be efficiently dealt with in each apparatus.
It is still another object of the present invention to provide a method for obtaining, when dealing with image data encoded using discrete wavelet transform, image data having an optimum data arrangement which takes into consideration the capacity of a memory provided in an apparatus dealing with the image data.
It is yet another object of the present invention to provide a method for changing, when dealing with image data encoded using discrete wavelet transform so as to be adapted to an apparatus having a small memory capacity, the arrangement of the image data to an arrangement such that various types of image processing can be easily performed in a desired two-dimensional region.
According to one aspect of the present invention, an image processing apparatus includes input means for inputting first entropy encoded data corresponding to an image. The first entropy encoded data is data produced by entropy encoding a first set of transform coefficients obtained by performing wavelet transform of the image in units of a first type. The apparatus also includes arrangement changing means for entropy decoding the first entropy encoded data to obtain the first set of transform coefficients and for changing the first set of transform coefficients into a second set of transform coefficients corresponding to the result of performing wavelet transform of the image in units of a second type, and entropy encoding means for generating second entropy encoded data by entropy encoding the second set of transform coefficients.
According to another aspect of the present invention, an image processing apparatus includes input means for inputting first entropy encoded data corresponding to an image. The first entropy encoded data is data produced by entropy encoding a first set of transform coefficients obtained by performing wavelet transform of the image in units of a first type. The apparatus also includes arrangement changing means for entropy decoding the first entropy encoded data to obtain the first set of transform coefficients and for changing the first set of transform coefficients into a second set of transform coefficients corresponding to the result of performing wavelet transform of the image in units of a second type, and entropy encoding means for generating second entropy encoded data by entropy encoding the second set of transform coefficients. Furthermore, the apparatus includes an additional arrangement changing means for performing entropy decoding of the second entropy encoded data to obtain the second set of transform coefficients and for changing the second set of transform coefficients into a third set of transfor coefficients corresponding to the result of performing wavelet transform of the image in units of a third type, and additional entropy encoding means for generating third entropy encoded data by entropy encoding the third set of transform coefficients.
According to yet another aspect of the present invention, an image processing method includes an input step of inputting first entropy encoded data corresponding to an image. The first entropy encoded data is data produced by entropy encoding a first set of transform coefficients obtained by performing wavelet transform of the image in units of a first type. The method also includes an arrangement changing step of entropy decoding the first entropy encoded data to obtain the first set of transform coefficients and of changing the first set of transform coefficients into a second set of transform coefficients corresponding to the result of of performing wavelet transform of the image in units of a second type, and an entropy encoding step of generating second entropy encoded data by entropy encoding the second set of transform coefficients.
According to still another aspect of the present invention, in a storage medium storing an image processing program in a state of being readable by a computer, the program includes an input step of inputting first entropy encoded data corresponding to an image. The first entropy encoded data is data produced by entropy encoding a first set of transform coefficients obtained by performing wavelet transform of the image in units of a first type. The program also includes an arrangement changing step of entropy decoding the first entropy encoded data to obtain the first set of transform coefficients and of changing the first set of transform coefficients into a second set of transform coefficients corresponding to the result of performing wavelet transform of the image in units of a second type, and an entropy encoding step of generating second entropy encoded data by entropy encoding the second set of transform coefficients.
According to yet another aspect of the present invention, an image processing apparatus includes input means for inputting first entropy encoded data corresponding to an image. The first entropy encoded data is data produced by entropy encoding a first set of transform coefficients obtained by performing wavelet transform of the image in a first pixel order. The apparatus also includes arrangement changing means for entropy decoding the first entropy encoded data to obtain the first set of transform coefficients and for changing the first set of transform coefficients into a second set of transform coefficients corresponding to the result of performing wavelet transform of the image in a second pixel order, and entropy encoding means for generating second entropy encoded data by entropy encoding the second set of transform coefficients.
According to yet a further aspect of the present invention, an image processing method includes an input step of inputting first entropy encoded data corresponding to an image. The first entropy encoded data is data produced by entropy encoding a first set of transform coefficients obtained by performing wavelet transform of the image in a first pixel order. The method also includes an arrangement changing step of entropy decoding the first entropy encoded data to obtain the first set of transform coefficients and of changing the first set of transform coefficients into a second set of transform coefficients corresponding to the result of performing wavelet transform of the image in a second pixel order, and an entropy encoding step of generating second entropy encoded data by entropy encoding the second set of transform coefficients.
According to still another aspect of the present invention, in a storage medium storing an image processing program in a state of being readable by a computer, the program includes an input step of inputting first entropy encoded data corresponding to an image. The first entropy encoded data is data produced by entropy encoding a first set of transform coefficients obtained by performing wavelet transform of the image in a first pixel order. The program also includes an arrangement changing step of entropy decoding the first entropy encoded data to obtain the first set of transform coefficients and of changing the first set of transform coefficients into a second set of transform coefficients corresponding to the result of performing wavelet transform of the image in a second pixel order, and an entropy encoding step of generating second entropy encoded data by entropy encoding the second set of transform coefficients.
The foregoing and other objects, advantages and features of the present invention will become more apparent from the following description of the preferred embodiments taken in conjunction with the accompanying drawings.

Conversion of wavelet coded formats depending on input and output buffer capacities


A coating composition comprising a polyfunctional monomer (a) having at least 3 (meth)acryloyloxy groups, a (meth)acrylic acid mono or diester of polyethyleneglycol (b), a sulfonic acid (c), a phosphoric acid ester (d), an ethanolamine (e), organic solvent, and a photosensitizer.

The present invention relates to a coating composition which forms a cross-linked hardened film on the substrate to which it is applied, the film exhibiting high abrasion resistance, cloud prevention properties, surface smoothness and dyeability and having a permanently high antistatic performance when irradiated, cured and cross-linked with active energy rays.
Synthetic resin moldings made of polymethyl methacrylate, polycarbonate or polyallyldiglycol carbonate have various commercial advantages in that they are not only lighter in the weight and substantially more shockproof than a corresponding glass product, but they are also cheaper in price and easier to fabricate than glass products. Accordingly, these materials have several practical applications in replacements for their glass counterparts, such as organic glass plates, light fixture covers, optical lenses, eyeglass lenses, sunglass lenses, reflectors and mirrors, diaplay panels, signboards, commercial advertizing displays, name plates, dust cover cases as well as automobile parts.
However, conventional synthetic resin moldings are particularly definient in surface abrasion resistance properties and are susceptible to damage on the surfaces, by contact with other objects, shocks and scratches during the transportation and storage or while in use. These surface scratches not only detract from the appearance of the article but also affect the properties of the article; for instance, scratches in the molded synthetic article when used as an optical surface in an optical device. Particularly, when the end uses of the coated moldings are for cameras, magnifying glasses, fashion glasses, sun glasses, correction lenses, window glass plates, decorative cases, display cases, dust covers, watch lenses, reflectors and mirrors, a surface scratch or imperfection will remarkably reduce the commercial value of the moldings and will make them unsaleable within a short period of time. Improvements in the abrasion resistance of the surface of such molded plastic articles are required.
A polyfunctional (meth)acrylate monomer has already been described as exhibiting high cross-linking hardening on polymerization when irradiated with active energy rays and is effective to improve the abrasion resistance of the surface of a synthetic resin molding and such fact has been disclosed, for example, in U.S. Pat. application Ser. No. 878,830 filed on Feb. 17, 1978, now U.S. Pat. No. 4,199,421.
While this has been an advancement in the art, there still remain problems to be resolved. For instance, the film formed on the surface of a synthetic resin molding is a cross-linked hardened film, it is difficult to diffuse the dye into the film so that the film may be dyed if so required. Also, when the film is subjected to moisture, it readily becomes clouded. Further, when friction is applied to the article, such as during cleaning, the film will generate static electrocity causing dust to be readily deposited on it. This detracts from the visual impression of the article, particularly when dust is deposited on difficult to clean surfaces such as the inside surface of a watch crystal. Accordingly, the value of the molding will be remarkably reduced, the range of end use applications is limited and cleaning or maintenance difficulties are encountered in practice.
A proposal has been made for improving the dyeability and cloud prevention properties of a coating which is a method in which either a compound having several dyeing coupling agents or cites, or a hydrophilic compound is mixed in a coating material composition. However, when such compound is included in the coating composition, the abrasion resistance will be reduced. As for preventing the generation of static electricity, there are procedures known in which an antistatic agent is mixed with the coating or a method in which a monomer itself having antistaticity properties is copolymerized with the coating monomer. The addition of an antistatic-type material is a convenient production method but only the antistatic agent present on the surface of the coating will develop the desired effect. Thus, in order to obtain sufficient preventing properties on the one hand, a high concentration of the antistatic agent is required, while on the other hand the abrasion resistance and appearance of the article will be reduced. Further, as the antistatic agent present on the surface will be easily dissipated by washing the surface or with friction and the coating will depreciate in its static properties. If the antistatic agent is present in the coating matrix, it may gradually seep out, however, this seepage tends to make the surface sticky and translucent, i.e., no longer optically transparent. Further, any durability against washing or the like is only temporary and is not permanent. With respect to the copolymerizing type of antistatic agent, no monomer other than in the surface layer will develop the effect, therefore a large amount of the monomer must be added and mixed and as a result the abrasion resistance and appearance will be reduced accordingly.


A pair of detection coils, one coil provided on each side of a sample container across the width of the sample container. The detection coil is made of a superconductor and has an electric circuit pattern capable of detecting a magnetic resonance signal from a sample. The detection coil includes a lateral component intersectional to a static magnetic field H0 and having a part disposed at a position spaced away from a detection region, as compared to the remaining part.

Nuclear magnetic resonance (NMR) measuring apparatuses and electron spin resonance (ESR) measuring apparatuses are conventionally known as representative magnetic resonance measuring apparatuses. Magnetic resonance imaging (MRI) apparatuses are known as being similar to the NMR measuring apparatuses. Hereinafter, the NMR measuring apparatus will be described in detail below.
The NMR is a phenomenon caused by atomic nuclei placed in a static magnetic field that interact with electromagnetic waves of specific frequencies. The NMR measuring apparatus is an apparatus capable of utilizing such a phenomenon to measure a sample at an atomic level. The NMR measuring apparatus can be practically used in analyses of organic compounds (e.g., chemicals and pesticides), high polymer materials (e.g., vinyl and polyethylene), and biological materials (e.g., nucleic acids and proteins). For example, the NMR measuring apparatus enables a user to examine the molecular structure of a sample.
The NMR apparatus includes an NMR probe (i.e., NMR signal detection probe) placed together with a sample in a superconducting magnet that generates a static magnetic field. The NMR probe includes a detection coil for transmission and reception. The detection coil has a function of applying a variable magnetic field to the sample in a transmission state and a function of receiving an NMR signal from the sample in a reception state. The resonance frequency is variable depending on an observation target nuclide. Therefore, in the measurement of the sample, a high-frequency signal having a particular frequency adapted to the observation target nuclide is given to the coil.
The uniformity of an external magnetic field in a sample space plays an important role in improving the detection accuracy of the NMR signal. If the external magnetic field is not uniform in the sample space, the NMR signal may be erroneously detected. The cause of generating such a non-uniform external magnetic field is, for example, magnetization of a member that approaches the sample space. In particular, the detection coil for detecting the NMR signal may generate a disturbed magnetic field in the sample space if the magnetization of the coil is finite. In general, an NMR apparatus having higher resolution includes a shimming apparatus that can correct the magnetic field distribution in the sample space. However, the practical order of the correction is limited to a lower order. If a detection coil has a complicated shape, it is generally difficult to correct a non-uniform magnetic field caused by the magnetization of the coil. Therefore, in a detection coil that approaches the sample space and has a complicated shape, the magnetization of the material must decrease down to zero as much as possible.
Further, it is conventionally known that Faraday's law of electromagnetic induction is employable in a method for detecting the NMR signal. The noise dominant in this method is Johnson noise. The Johnson noise is known to be proportional to the square root of the coil temperature or the square root of the electric resistance of the coil.
As discussed in the reference "High Temperature Superconducting Radio Frequency Coils for NMR Spectroscopy and Magnetic Resonance Imaging," Steven M. Anlage, "Microwave Superconductivity," ed. by H. Weinstock and M. Nisenoff, (Kluwer, Amsterdam, 2001), pp. 337-352, a detection coil made of a superconductor is conventionally known. When a superconductor is cooled, the electric resistance of the superconductor becomes substantially zero. Therefore, the above-mentioned noise can be reduced and the detection sensitivity of the NMR signal can be improved.
Selecting a superconductor as a detection coil material is useful in that the thermal noise signal can be reduced. However, the superconductor possesses strong magnetic shield characteristics induced by superconductive phenomenon. The above-mentioned property possibly causes a disturbance in the uniformity of a magnetic field in the sample space. As a result, the sample filling rate (i.e., the ratio of the volume of a measurement target sample to the volume of the detection coil) decreases and the S/N ratio of the NMR signal decreases.
The sample filling rate is mentioned in the reference "High Temperature Superconducting Radio Frequency Coils for NMR Spectroscopy and Magnetic Resonance Imaging," Steven M. Anlage, "Microwave Superconductivity," ed. by H. Weinstock and M. Nisenoff, (Kluwer, Amsterdam, 2001), pp. 337-352. When the sample filling rate of a metallic detection coil in a room-temperature environment is 1, the sample filling rate of a superconductive detection coil in a low-temperature environment is approximately 0.2. In general, the detection sensitivity is proportional to the square root of the sample filling rate. Therefore, if the employed detection coil is made of a superconductor, a relative reduction in the detection sensitivity is approximately 0.45 times. One of the reasons why the sample filling rate of a superconductive detection coil is kept low is that the superconductive detection coil is forcibly isolated from the sample to avoid the non-uniformity of the magnetic field caused by the superconductive detection coil. The sample filling rate decreases with increasing distance between the detection coil and the sample. As a result, the detection sensitivity decreases correspondingly.
As discussed in the reference "Design, construction, and validation of a 1-mm triple-resonance high-temperature-superconducting probe for NMR" William W. Brey et. al., Journal of Magnetic Resonance 179 (2006) 290-293 and U.S. Pat. No. 5,565,778, it is conventionally known that the superconductive detection coil can be configured to include a slit to suppress the generation of shield current that may cause magnetic shield generation. Providing such a slit is effective in suppressing the generation of large shield current. However, smaller residual shield current may flow through a plurality of coil portions separated by the slit. The entire amount of the shield current rises up to a level corresponding to a sum of the separated coil portions. Further, the above-mentioned slit is not effective in preventing a magnetization component parallel to the magnetic field from generating a non-uniform magnetic field.
The present disclosure intends to provide a magnetic resonance signal detection module including a detection coil made of a superconductor, which can improve the detection sensitivity while suppressing the reduction of the sample filling rate of the detection coil as much as possible.

Magnetic resonance signal detection module


A semiconductor manufacturing method is directed to forming a ferroelectric film, and in particular a ferroelectric film of the bismuth layer structure type, that has a significant component of reversible polarization perpendicular to the plane of the electrodes. The manufacturing method is conducted at low temperatures on commercially suitable electrodes and is compatible with conventional CMOS fabrication techniques. A ferroelectric strontium-bismuth-tantalate ("SBT") film is formed using two sputtering targets. A first sputtering target is comprised primarily of bismuth oxide (Bi.sub.2 O.sub.3) and a second sputtering target is comprised primarily of SBT. An initial layer of bismuth oxide is formed on the bottom electrode of a ferroelectric capacitor stack. The initial layer of bismuth oxide is directly followed by a sputtered layer of SBT. A second layer of bismuth oxide is then applied and the layers are alternated in a "layer cake" fashion containing a plurality of layers until a desired thickness of the film is attained. At the end of the deposition, a crystallization anneal is performed to make the film ferroelectric. Once the ferroelectric film is in place, the top electrode is formed and the remaining processing steps are completed.

This invention relates generally to a method of forming a ferroelectric film for use as the dielectric of a capacitor memory element for a nonvolatile memory. More particularly, the present invention relates to a manufacturing method using bismuth layered oxide compounds having the desirable electrical characteristic that is compatible with conventional integrated circuit processing.
It is well known that certain materials such as lead zirconate titanate (PbZr.sub.X Ti.sub.1-X O.sub.3), which is also known as "PZT", are "ferroelectric" in that they can retain a reversible electric polarization in the absence of an applied electric field. Typically, these compounds exist as polycrystalline materials containing grains of perovskite crystalline material.
Other compounds, such as the bismuth layered compounds are also ferroelectric. The structure of bismuth layered compounds consists of layers of perovskite, infinite in two dimensions, separated from each other by a bismuth oxide layer. The perovskite layer can be one, two, three or more perovskite unit cells thick. Each of these thicknesses results in a separate structure type, but has the perovskite layer-bismuth oxide layer alternation, giving rise to the term bismuth "layered" compounds. Examples of ferroelectric bismuth layered compounds include bismuth titanate (Bi.sub.4 Ti.sub.3 O.sub.12) and strontium bismuth tantalate (SrBi.sub.2 Ta.sub.2 O.sub.9), which is also known as "SBT", as well as many others.
The reversible polarization of a ferroelectric material film, for example, must be in a direction perpendicular to the plane of electrodes that transfer the applied electric field to the film so that an appreciable amount of charge can be detected. A stable polarization results from the alignment of internal dipoles with the perovskite crystal units in the ferroelectric material. Application of the .electric field across a ferroelectric material causes the alignment of the dipoles in one direction. Reversal of the polarity of the applied field also reverses, or switches, the alignment of the internal dipoles. Application of an electric field exceeding a critical level known as the "coercive voltage", VC, causes dipoles within the ferroelectric material to begin alignment, as is shown in the hysteresis curve 10A of FIG. 1A. An increase in the applied electric field results in a saturation level known as the "saturation voltage", VSAT, wherein substantially all of the dipoles within the ferroelectric material have been polarized in one direction. In FIG. 1A, the coercive voltage is about 1.3 volts and the saturation voltage is about five volts. Note that hysteresis curve 10A has a distended shape, which is indicative of a poorly defined coercive voltage, i.e. many of the dipoles have not yet been switched at the coercive voltage level of applied electric field.
Hysteresis curve 10A therefore demonstrates the electrical behavior of a ferroelectric material such as PZT wherein the x-axis represents the applied electric field and the y-axis represents the resultant polarization or charge. Two stable states 12A and 14A are shown in FIG. 1A, which represent opposite alignments of the internal dipoles after the applied electric field has been removed. The amount of charge released in moving between stable states 12A and 14A is known as the "switched charge." It is also known that the rate of alignment of the dipoles is related to the overdrive voltage, i.e. the amount by which the applied voltage exceeds the coercive voltage. The position of the dipoles and the associated electric charge in response to an applied electric field can be detected with appropriate sensing circuitry. Ferroelectric materials, therefore, can be used as the dielectric material in a ferroelectric capacitor that in turn is used as the memory element in a nonvolatile memory cell.
Hysteresis curve 10B in FIG. 1B demonstrates the electrical behavior of a ferroelectric material such as SBT wherein the x-axis represents the applied electric field and the y-axis represents the resultant polarization or charge. In the hysteresis curve 10B, the coercive voltage is about one volt and the saturation voltage is about 2.5 volts. Note that hysteresis curve 10B has a roughly square shape, which is indicative of a well defined coercive voltage, i.e. most of the dipoles have been switched at the coercive voltage level of applied electric field. As in FIG. 1A, two stable states 12B and 14B are shown in FIG. 1B, which represent opposite alignments of the; internal dipoles after the applied electric field has been removed.
To be useful, a ferroelectric material in a memory array must have the ability to retain data when repeatedly switched between the two stable data states 12A and 14A as shown in FIG. 1A, or data states 12B and 14B as shown in FIG. 1B. Conventional non-volatile memory cells such as EEPROMs are non-destructive readout devices in that reading the data state does not change that data state. Conventional non-volatile memories allow an unlimited number of read cycles, but a very limited number of write cycles Ferroelectric memory devices are typically destructive readout devices in that switching occurs for each reading of the data. Consequently, it is desirable that the number of cycles before failure of the ferroelectric memory cell be very much higher than that for EEPROMs or on the order of magnitude of one billion or one trillion cycles.
It is also desirable in many applications for the ferroelectric memory cell to operate at low voltage such as 3.3 volts. Thus, the coercive voltage should be significantly lower than the desired operating voltage of the memory. The minimum voltage at which the switched charge reaches its maximum value, the saturation voltage, should also be about the same as or lower than the desired operating voltage for optimum performance. It is further desirable that the ferroelectric material in a memory array retain a data state over prolonged periods of time at elevated temperatures. Ideally, retention of a data state should be independent of the state of prior data storage. The bismuth layered ferroelectric compounds referred to above are thus ideally suited for a ferroelectric memory application because of their desirable cycling, low voltage, and retention properties.
While ferroelectric bismuth compounds are well suited to operation in a memory because of their electric characteristics, they are difficult to manufacture as a capacitor dielectric material in a typical semiconductor processing flow. A classical method of depositing bismuth titanate, or other bismuth ferroelectric materials, is to sputter the material from a single target at elevated temperatures onto crystalline planes of a substrate oxide. The substrate oxide is chosen so that the lattice dimensions are matched to the lattice dimensions of the ferroelectric bismuth compound, which results in a crystalline film that is ferroelectric. The classical sputter deposition method suffers from several shortcomings.
The requirement of lattice matching severely restricts the possible choices of substrates. The common substrates used to lattice match with the ferroelectric film, such as aluminum oxide, lanthanum aluminum oxide, magnesium aluminum oxide or magnesium oxide, are not conductive. In order to fabricate a capacitor, conductive electrodes are required in order to apply an electric field across the ferroelectric film. To use these films on insulating lattice matched oxide substrates, the ferroelectric film must be physically peeled from the substrate and electroded. After separation from the substrate, the films are very fragile and difficult to handle. Therefore the process of using such films is very difficult and unsuitable for fabrication of conventional nonvolatile memories. It is conceivable that there might exist a conductive oxide that could also provide lattice matching, but the known conductive oxides suffer from poor conductivity, thermal instabilities, and complex fabrication methods.
Another shortcoming of the classical method is the requirement of elevated deposition temperatures, e.g. 500.degree. to 700.degree. C. These very high temperatures add complexity and impose severe constraints on the deposition equipment. The high temperatures also can degrade the bottom electrode surface flatness due to hillock formation.
Alternative prior art spin-on deposition methods, such as sol gel or metal organic deposition, may yield switching bismuth layered oxide films on conductive electrodes, but these methods also suffer from several shortcomings. The orientation of grains and grain size of the deposited film might not be suitable or controllable when used on bottom electrodes suitable for conventional integrated circuit processing, resulting in a low grade ferroelectric material that yields little switched charge. Furthermore, these spin-on deposition methods suffer from practical incompatibilities with the processing techniques used in the fabrication of conventional semiconductor integrated circuit non-volatile memories. Spin-on deposition planarizes the surface topography on top of an integrated circuit by becoming thicker in the troughs and thinner at elevated surface features. This non-uniform film thickness deposition causes problems during subsequent patterning steps, resulting in regions of under etching and regions of over etching. Another problem with spin-on deposition techniques is that the availability of suitable precursor solutions is not as commercially developed as the availability of sputter targets for the deposition process referred to above. The purity requirement of near zero mobile ion content is readily achieved with commercially available metal oxide powders used for sputtering targets, but remains a challenge for spin-on sources. The spin-on process is susceptible to a host of additional problems such as precipitation of detrimental particles in the solution or during application, streaking, poor adhesion, and film cracking due to volumetric changes during solvent evolution bakes.
Another alternative prior art deposition method is the technique of "co-deposition" in which two or more targets are used, primarily to control the composition of a deposited film. Typically, the deposition from multiple targets is either done simultaneously or separately, but in the latter case with extremely thin layers. The layer thickness may be only a few Angstroms thick, in which case there is an effective mixing of layers to form a homogeneous film composition. This technique, as now commonly practiced, is not useful for forming bismuth layered ferroelectric films. While the resultant film composition is made of the desired constituent elements, and in the proportions required, the film is not ferroelectric. It is speculated that initial orientation of the crystal grains, or perhaps other properties of the film, result in a polarization axis that is not perpendicular to the plane of the metal electrodes in contact with the film. The capacitors made with such a film, therefor, are not ferroelectric in that a significant switched charge as can be detected with a conventional sense amplifier is not produced in response to an applied electric field.
A need remains, therefore, for a method for the formation of desirable bismuth ferroelectric layers with consistent desirable electrical properties that is readily integrated and compatible with conventional complementary metal oxide semiconductor transistor ("CMOS") processing.

Method of manufacturing ferroelectric bismuth layered oxides


A connector for a cap applied to a mouth of a tank including an engaging member having an annular portion formed of elastic material connected to one end of an elongated portion, and a plurality of beam-like portions formed integrally with the annular portion and arranged substantially in the form of a letter V in the annular portion.

(1) FIELD OF THE INVENTION
This invention relates to connector means for a cap for the mouth of a tank.
(2) DESCRIPTION OF THE PRIOR ART
A cap for closing the mouth of a tank is liable to be stained or damaged. One type of connector means known in the art for avoiding this problem comprises an elongated member, such as a string or chain, secured at one end to the inner side of the cap and extending at an opposite end through the mouth into the interior of the tank, and an engaging member of a diameter greater than that of the mouth of the tank secured to the opposite end of the elongated member and brought into engagement with the inner side of the mouth.
The connector means of this construction of the prior art has suffered disadvantages. Difficulty has been encountered in inserting the engaging member into the tank. The engaging member has often tended to be easily dislodged through the mouth from the interior of the tank, blocking the flow of a fluid through the mouth. The tank has often been damaged by the engaging member's during inserted therein.

Connector tank means for cap for mouth of tank


The present invention provides a method of producing an aqueous solution containing bis(Nε-lauroyl lysine)dicarboxylic acid diamide and/or a salt thereof, and having a pH of 9-11, which includes a first step of reacting Nε-lauroyl lysine and/or a salt thereof with dicarboxylic acid dichloride in a water solvent having a pH of 12-14 to form bis(Nε-lauroyl lysine)dicarboxylic acid diamide and/or a salt thereof, a second step of adjusting the aqueous solution obtained in the first step to pH 7.5-8.5, a third step of adding Nε-lauroyl lysine to the aqueous solution obtained in the second step and filtering the mixture, and a fourth step of adjusting the aqueous solution obtained in the third step to pH 9-11.

Field of the Invention
The present invention relates to an aqueous solution containing bis(Nε-lauroyl lysine)dicarboxylic acid diamide and/or a salt thereof, and a production method thereof.
Discussion of the Background
It has been reported that bis(Nε-lauroyl lysine)dicarboxylic acid diamide and a salt thereof are useful as gelling agents for water and organic solvents (non-patent document 1). In non-patent document 1, Nε-lauroyl-L-lysine and dicarboxylic acid dichloride are reacted in a mixed solvent of water and diethyl ether, the reaction solution is acidified with hydrochloric acid, and the resultant product is precipitated and filtrated, whereby bis(Nε-lauroyl lysine)dicarboxylic acid diamide is produced. Furthermore, a salt thereof is produced by adding a base (non-patent document 1, page 1440, Scheme 1 and page 1442, General procedure).

Aqueous solution containing bis(N epsilon lauroyllysine)dicarboxylic acid diamide and/or salt thereof, and method for producing same


The invention is concerned with an improved carriage guide and mast stiffener for a lift mast of the sort used on a lift truck or the like. Such a lift mast comprises a pair of spaced apart outer mast members, a pair of spaced apart inner mast members between the outer mast members, each slidably mounted in a respective one of the outer mast members and a carriage structure mounted on the inner mast members for translation therein. The improved structure of the present invention comprises a pair of rails each affixed to extend longitudinally along a respective outer surface of a respective one of the outer mast members and a pair of bearings affixed to the carriage structure, each snugly but slidably engaging a respective one of the rails and allowing relative longitudinal translation of the carriage structure relative to the outer mast members while preventing other translation therebetween.

1. Field of the Invention
The invention is concerned with an improvement in the art of translating a carriage relative to outer and inner mast members. Most particularly the invention is concerned with an improvement in a mast assembly as is used on a lift truck.
2. Prior Art
Mast assemblies are well known which include a pair of spaced apart outer mast members, a pair of spaced apart inner mast members between the outer mast members, each of the inner mast members being slidably mounted in a respective one of the outer mast members and a carriage or the like which is mounted on the inner mast members for translation therein. A great number of common lift trucks have such a structure. For example, U.S. Pat. DES. No. 235,056 clearly illustrates a lift truck having such a mast assembly.
A serious problem, has existed with prior art mast assemblies of the type just described. In particular, the strength and stability of such a mast assembly has at times been insufficient for heavy duty applications such as arise in forest logging operations due to the relatively very large moments of force which are exerted upon one or more members thereof, for example upon the carriage thereof. A typical carriage has side thrust rollers which are adequate for light duty applications, however for use in heavy duty applications such as forestry logging operations these are not fully adequate. Further, the spaced apart outer mast members which are generally supporters of the rest of the structure have a tendency to spread apart due to side thrust load causing excessive wear and ultimate premature failure of loaded components. Also, when loads are suddenly taken up, for example on the carriage of such a heavy duty mast assembly, the mast and carriage of the assembly would normally be dragged against one another under relatively high stresses. Very importantly in heavy duty applications undesirable excessive loading of the carriage rollers occurs during impact loading along with cocking of the carriage due to unbalance of the load on the forks of the carriage.