An analytical method for the quantitative determination of the impurities in silicon dioxide by which trace amounts of hardly soluble impurities contained in silicon dioxide can be reliably decomposed and converted into a solution so that the contents of all of the impurities contained in silicon dioxide or, in particular, zirconium in a natural quartz powder can be accurately determined. Silicon dioxide is decomposed with hydrofluoric acid or an acid mixture of hydrofluoric acid and another inorganic acid to give a decomposition solution which is, as such or after admixture with another inorganic acid, subjected to evaporation to dryness and the residue is heated to cause fusion with addition of a salt or hydroxide of an alkali metal followed by dissolution of the salt or hydroxide of an alkali metal with pure water or with an aqueous solution of an inorganic acid to give an aqueous solution which is subjected to quantitative analysis of the impurities therein.

1. Field of the Invention
The present invention relates to a method for the analysis of impurity elements in quartz glass used in the fields of semiconductor industries and optical communication or in amorphous or crystalline silicon dioxide as the starting material thereof and, more particularly, relates to a method for the quantitative analysis of the element of zirconium in natural quartz.
2. Description of the Related Art
Heretofore, analysis of the impurity elements in silicon dioxide is conducted for the quantitative analysis by the method in which silicon dioxide is decomposed with hydrofluoric acid and converted into a solution and the impurity elements in this solution are analyzed by the conventional procedure of purity analysis of a solution so as to utilize the results for the calculation of the contents of the impurity elements.
Although hydrofluoric acid has a strong power to decompose silicon dioxide, the dissolving power thereof for other metallic impurities is not always high enough so that it is widely performed in conducting the decomposition to use an acid mixture thereof with nitric acid which has a high dissolving power for metallic elements.
When it is desired to conduct analysis of an element which is subject to vaporization and dissipation in the form of a fluoride, such as boron and the like, it is also performed to add a non-volatile acid such as phosphoric acid and sulfuric acid or to add an organic additive such as mannitol capable of adsorbing and immobilizing the element.
The inventors, however, have discovered the fact that no accurate analytical results can be obtained by these conventional procedures for several of the elements in quartz glass. In particular, it has been found that no accurate quantitative analysis can be performed for the element of zirconium because this element cannot be fully converted into a solution in the course of the starting decomposition procedure of the sample.
Further, the inventors have conducted studies on an efficient means by which this undissolvable matter can be decomposed and converted into a solution and, as a result of the extensively continued investigations for the analytical method by which accurate analysis can be performed for the total amount of the impurities contained therein, have arrived at a discovery that a possibility can be obtained for the analysis of the elements such as zirconium which cannot be accurately analyzed by the conventional analytical methods for quartz glass leading to completion of the present invention.
In particular, natural quartz powders contain impurities in various forms depending on the process of geological formation thereof. It has become clear that a part of them cannot be accurately analyzed by the conventional procedures because they cannot be decomposed and converted into a solution. Moreover, it has also become clear that some of the purification procedures for the purification of the starting materials thereof cause conversion of the existing impurities into a hardly decomposable form.
With the foregoing drawbacks in view, an object of the present invention is to provide a method for the analysis of the amounts of impurities in silicon dioxide by which the total amount of the impurities contained in silicon dioxide or, in particular, zirconium in a natural quartz powder can be quantitatively determined with high accuracy.

Method for the analysis of impurity contents in silicon dioxide


The present invention routes object requests in a distributed system using address information identified in object headers that accompany the request. Specifically, when an object is created under the present invention, address information is inserted into a corresponding object header. When a request related to the object is later issued, the object header accompanies the request. The address information is used to ensure that the request is efficiently and accurately routed to a target process within a target node of a target cell.

1. Field of the Invention
The present invention generally relates to a method, system and program product for routing requests in a distributed system. Specifically, the present invention routes object requests to the applicable processes based on address information that is provided within object headers that accompany the requests.
2. Background Art
As electronic commerce grows, business are increasingly implementing complex websites to foster growth and profitably. To develop and deploy integrated websites, developers often rely on software products such as WEBSPHERE, which is commercially available from International Business Machines Corp. of Armonk, N.Y. Although products such as WEBSPHERE are powerful tools in providing complete electronic business solutions to customers, they are generally distributed, multi-process systems. This can complicate its interaction with other popular systems such as JAVA MANAGEMENT EXTENSIONS (JMX). Specifically, JMX is a package addition to the Java 2 Platform, standard edition (J2SE) that provides management and monitoring services for web-based solutions. Unfortunately, the JMX Java Management Framework specification does not include provisions for distributing requests (e.g., JAVA object management requests) from one process (e.g., Java Virtual machine) to another. Thus, when dealing with a distributed system where several processes can reside over one or more nodes, the routing of such requests can become complicated.
For example, if an object management request bound for target process "A" within target node "2" is first received on node "1," there is currently no efficient way to route the request to target process "A" within target node "2." Under one approach, a global registry is maintained that tracks all objects and requests. However, when a management request is made corresponding to a particular object, the registry must be consulted to obtain the object's address information. Such a requirement not only requires constant updating of the global registry, but is also highly inefficient.
In view of the foregoing, there exists a need for a method, system and program product for routing requests in a distributed system. Specifically, a need exists for address information to accompany requests (e.g., object management requests) for efficient routing to the target destination. Still yet, a need exists for the address information to be included in an object header that corresponds to the object that is the target of the request. A further need exists for the address information to be inserted into the object header as the object is being created, or at least before the object is implemented.

Method, system and program product for routing requests in a distributed system

International Business Machines Corporation


The separation of single-walled carbon nanotubes (SWNTs), by chirality and/or diameter, using centrifugation of compositions of SWNTs in and surface active components in density gradient media.

The utilization of single-walled carbon nanotubes (SWNTs) in large quantities in the fields of molecular electronics, opto-electronics, and biological sensing will require SWNTs of the same physical structure, electronic-type, and band gap. Since current methods of synthesis produce mixtures of nanotubes with different physical structures and electrical properties, the development of methods for the post-production separation of these one-dimensional materials is necessary. Towards this end, progress has been reported in the separation of semiconducting from metallic SWNTs using controlled electrical breakdown, dielectrophoresis, and chemical moieties that selectively react with either type of nanotube.
SWNTs have been used in conjunction with various separation techniques, including anion exchange media, the protonation and ozonation of nanotube-sidewalls, and the light-induced oxidation of carbon nanotubes. However, such procedures chemically or structurally modify the nanotubes, at risk of compromising their properties and utility. Accordingly, the search for an efficient, economical separation method remains an ongoing concern in the art.

Separation of carbon nanotubes in density gradients


Curable compositions, cured compositions, articles containing the curable or cured compositions, and methods of making the articles are provided. More particularly, the curable compositions contain a (meth)acrylate-based polymer having pendant (meth)acryloyl groups, at least one monomer having a single ethylenically unsaturated group, a photoinitiator that includes an acyl phosphine oxide, and a thixotropic agent. The curable compositions can be printed or dispensed, if desired, and the cured compositions are pressure-sensitive adhesives.

Some polymeric materials have been formed by applying a layer of a curable composition to the surface of a substrate. The curable composition can contain a pre-polymer (e.g., a syrup polymer) plus additional monomers and crosslinking agents. Cured compositions can be prepared by exposing the curable composition to actinic radiation such as ultraviolet and/or visible radiation. Such polymeric materials and processes are described in U.S. Pat. No. 4,181,752 (Martens et al.), U.S. Pat. No. 4,330,590 (Vesley), U.S. Pat. No. 4,329,384 (Vesley et al.), U.S. Pat. No. 4,379,201 (Heilmann et al.), U.S. Pat. No. 5,506,279 (Babu et al.), U.S. Pat. No. 5,773,836 (Bennett et al.), and U.S. Pat. No. 5,773,485 (Bennett et al.). Some curable compositions have contained (meth)acrylate-based polymers with pendant (meth)acryloyl groups such as those described in PCT application publications WO 2014/078115 (Behling et al.), WO 2017/058499 (Behling et al.), and WO 2013/0258443 (Suwa et al.). The resulting articles with a cured composition are often cut (e.g., die cut) or slit to a desired size and shape.
There is an increasing need for adhesive articles with small dimensions. Cutting small articles with a complex shape from a large adhesive article can be challenging. There is an increasing need for adhesive compositions that can be printed or dispensed to the desired size and shape. Various printable or dispensable adhesive compositions have been described in U.S. Pat. No. 6,214,460 (Bluem et al.) and PCT application publications WO 2016/178871 (Campbell et al.), WO 2015/077114 (Clapper et al.), WO 2005/044940 (Ellis et al.), and WO 2014/093014 (Yurt et al.).

Curable compositions for pressure-sensitive adhesives


A multi-station wheel deburring device is disclosed, which consists of a lower lifting translation system, a first brush system, a second brush system, a synchronous clamping drive system and a third brush system, etc. The multi-station wheel deburring device can be used for removing burrs from the root of a wheel flange, a center hole, bolt holes and a back cavity, can automatically adjust the position of each brush according to the dimension and shape of a wheel, and at the same time, has the characteristics of high automation, high removal efficiency, advanced technology, strong universality and high safety and stability.

In the machining process of an aluminum alloy wheel, burrs are produced at the root of a wheel flange, a center hole, bolt holes and a back cavity. If the produced burrs are not removed in time, the subsequent coating effect will be seriously affected, and even the wheel is corroded in advance during use. In addition, the dimensions of wheels operated on a logistics roller bed and the shapes of the back cavities are different due to the mixed-line production. Therefore, a multifunctional and general-purpose automatic deburring device is needed to remove burrs from these parts of the wheel.


Apparatuses, methods, systems, and program products are disclosed for changing settings based on a fingerprint. An apparatus includes a fingerprint sensor, a processor, and a memory that stores code executable by the processor. The memory stores code executable by the processor to detect a fingerprint using the fingerprint sensor. The memory stores code executable by the processor to determine that an actively executing application comprises a setting associated with the detected fingerprint. The memory stores code executable by the processor to change the setting for the actively executing application associated with the detected fingerprint.

Applications executing on a computing device may have different settings or modes that can usually be set using an interface such as a graphical interface. If an application is needed quickly (e.g., taking a picture with a camera), however, it can be difficult to locate, using the interface, which settings to change, which values the setting should be, or the like in a timely manner.

Changing settings based on a fingerprint


A liquid crystal display device including a first substrate 110a, a second substrate 110b placed to face the first substrate, a liquid crystal layer 120 interposed between the first and second substrates, a first electrode 111 formed on the first substrate, a second electrode 131 formed on the second substrate, an interlayer insulating film 115a placed between the first electrode and the first substrate, and a wall structure 115b formed integrally with the interlayer insulating film. The liquid crystal display device has a plurality of pixels each including the first electrode, the second electrode and the liquid crystal layer interposed between the first and second electrodes. A shading region surrounds each of the plurality of pixels, and the wall structure is placed regularly in the shading region. A groove structure 415a may be formed in place of the wall structure.

The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device suitably used for portable information terminals (for example, PDAs), mobile phones, car-mounted liquid crystal displays, digital cameras, PCs, amusement equipment, TVs and the like.
In recent years, liquid crystal display (LCD) devices have found widespread use for notebook PCs, mobile phones, information equipment such as electronic personal organizers, LC monitor-equipped camera built-in VTRs and the like, thank to their features of being thin and consuming low power.
A vertical alignment mode using a vertically aligned liquid crystal layer has increasingly received attention as a display mode permitting high contrast and a wide viewing angle. A vertically aligned liquid crystal layer is generally obtained using a vertical alignment film and a liquid crystal material having negative dielectric anisotropy.
For example, Japanese Laid-Open Patent Publication No. 6-301036 (Literature 1) discloses an LCD device in which a tilt electric field is generated around an opening formed in a counter electrode that faces a pixel electrode via a liquid crystal layer, so that liquid crystal molecules surrounding liquid crystal molecules existing in the opening, which are in the vertically aligned state, are aligned in tilt directions around the opening as the center, to thereby improve the visual angle characteristics.
However, in the device described in Literature 1, it is difficult to generate a tilt electric field over the entire region of each pixel. Therefore, each pixel has a region in which liquid crystal molecules delay in response to a voltage, and this causes a problem of occurrence of an afterimage phenomenon.
To solve the above problem, Japanese Laid-Open Patent Publication No. 2000-47217 (Literature 2) discloses an LCD device in which openings are provided regularly in a pixel electrode or a counter electrode, to form a plurality of liquid crystal domains each having radially tilt alignment in each pixel.
Japanese Laid-Open Patent Publication No. 2003-167253 (Literature 3) discloses a technique in which a plurality of projections are provided regularly in each pixel to stabilize the aligned state of liquid crystal domains having radially tilt alignment formed around the projections. This literature also discloses using a tilt electric field generated at openings formed in an electrode, together with the alignment regulating force of the projections, to regulate the alignment of liquid crystal molecules, and thus improve the display characteristics.
Japanese Laid-Open Patent Publication No. 2000-98393 (Literature 4) discloses a technology on an LCD device in which a groove structure is provided inside each pixel (at least inside a region to which a voltage for display is applied) to form axisymmetrically aligned domains in the regions of the pixel divided with the groove structure using the alignment regulating force of the side faces of the groove structure. When this technology is applied to a plasma-address LCD device, in which a voltage will be easily applied across this thick portion of the liquid crystal layer having the groove structure, lowering in drive voltage and improvement in response speed can be attained.
In recent years, a type of LCD device permitting high-quality display both outdoors and indoors has been proposed (see Japanese Patent Gazette No. 2955277 (Literature 5) and U.S. Pat. No. 6,195,140 (Literature 6), for example). In this type of LCD device, called a transflective (transflective) LCD device, each pixel has a reflection region in which display is done in the reflection mode and a transmission region in which display is done in the transmission mode.
The currently available transflective LCD devices adopt an ECB mode, a TN mode and the like. Literature 3 described above discloses adoption of the vertical alignment mode for a transflective LCD device, not only for a transmissive LCD device. Japanese Laid-Open Patent Publication No. 2002-350853 (Literature 7) discloses a technique in which in a transflective LCD device having a vertically aligned liquid crystal layer, the alignment (multi-axis alignment) of liquid crystal molecules is controlled with depressions formed on an insulating layer that is provided to double the thickness of the liquid crystal layer in a transmission region compared with that in a reflection region. This literature discloses that the depressions are in the shape of a regular octagon, for example, and projections or slits (electrode openings) are formed at positions opposing the depressions via the liquid crystal layer (see FIGS. 3 and 16 of Literature 7, for example).
To improve the display quality in the reflection mode, a technique of forming a diffuse reflection layer excellent in diffuse reflection characteristics has been examined. For example, Japanese Laid-Open Patent Publication No. 6-75238 (Literature 8) discloses a technique in which fine projections and depressions are formed randomly on the surface of a reflection electrode in a photolithography step using a two-layer photosensitive resin film to thereby obtain good diffuse reflection characteristics. Japanese Laid-Open Patent Publication No. 9-90426 (Literature 9) discloses a technique in which a reflection electrode having fine projections and depressions is formed by exposing a one-layer photosensitive resin film to light via a photomask for formation of contact holes and fine projections and depressions and developing the resin, for simplification of the fabrication process.
The technologies disclosed in Literature 2 and 3 have the following problems. In these technologies, projections or openings are provided in each pixel to form a plurality of liquid crystal domains in the pixel (that is, divide the pixel into domains), to thereby strengthen the alignment regulating force on liquid crystal molecules. According to examinations conducted by the inventors of the present invention, however, to obtain-sufficient alignment regulating force, the alignment regulating structure such as projections and openings must be placed on both sides of a liquid crystal layer (on the surfaces of a pair of opposing substrates facing the liquid crystal layer), and this complicates the fabrication process. The effective aperture ratio of each pixel having such an alignment regulating structure inside the pixel may decrease, and also the contrast ratio may decrease due to light leakage occurring in the peripheries of the projections in the pixel. The decrease of the effective aperture ratio and/or the decrease of the contrast ratio will become further eminent when the alignment regulating structure is provided on both substrates because the substrate alignment margin must be taken into consideration.
The technology disclosed in Literature 4, in which the groove structure is formed inside each pixel (at least inside a region to which a voltage for display is applied), has the problems that light leakage occurs near the inclined faces of the groove structure during non-voltage application, decreasing the contrast ratio, and that the effective aperture ratio decreases.
In the technology disclosed in Literature 7, it is necessary to provide projections or electrode openings at positions opposite to the depressions formed for control of the multi-axis alignment. This technology therefore has the same problems as those described above.
The fabrication process will be complicated if the methods disclosed in Literature 8 and 9 are employed to form reflection electrodes to improve the display quality in the reflection mode of a transflective LCD device, for example. That is, it is necessary to form fine projections and depressions for improving the diffuse reflection characteristics, in addition to the projections for alignment regulation, and this increases the cost of the LCD device.

Liquid crystal display device and fabrication method thereof


A method and system for tracing internet protocol packets is disclosed. One aspect of the method involves generating traceback packets containing information relating to their origin, destination, and encountered devices. The generated traceback packets can differ depending on the network configuration and Internet traffic scenarios. Another aspect involves analyzing incoming Internet traffic and generating traceback packets based on the performed analysis. Another aspect involves discovering a denial-of-service attack. Another aspect involves modifying operational parameters in response to the attack. One aspect of the system involves traceback servers, which can collect and provide traceback information to the public or on a private network. Another aspect involves the dissemination of traceback information to interested and/or authorized parties.

IP traceback is a method of identifying the origin of packets on the Internet. IP traceback may have various applications in network management and security.
Various IP traceback methods rely on packet marking, i.e., transmitting traceback information inside "live" packets. For such transmission of traceback data, these methods rely on rarely used fields of the IP header, such as the Reserved Flag and Fragmentation ID field. Typically traceback data is an IP address, which is a 32-bit string. Because fewer than 32 bits are unused and available in the typical IP header, the transmitted IP address must be split in two or more parts. Each of these parts is then separately transmitted together with other information required for the IP address reconstruction. The process of determining information to be inserted into a packet and then inserting it is frequently referred to as "marking."
The splitting of the transmitted IP addresses results in the victim receiving only parts of the transmitted IP addresses, which presents several problems.
First, complex, and memory- and processor-intensive reconstruction procedures are required to ascertain the actual transmitted IP addresses. These procedures match parts of the embedded and transmitted IP addresses to assemble complete IP addresses. For real-time traceback, these reconstruction procedures must be performed while the victim is being attacked.
Second, inevitably, as the number of attacking entities, such as slaves and reflectors, increases, the number of false positive identifications also increases. Some algorithms have been developed to increase the number of reconstructed IP addresses while keeping the false positive rate under a certain predetermined value, such as 1%. At the moment, several thousand simultaneous attackers seems to be the limit for currently existing systems.
Third, because, typically, the fragmentation ID field is used for transmission of the traceback information, IP fragmentation is adversely affected. Since information used for reconstruction of fragmented packets has been overwritten with traceback information, it may be impossible to reconstruct the original packet.
A key benefit of the marking-based traceback methods is that the traceback information reaches as far as the attack packets. Some traceback methods rely on the generation of new ICMP packets that carry traceback information. While such ICMP-based methods do not present the above problems associated with packet marking, traceback using ICMP packets is problematic because ICMP packets are frequently filtered.
Accordingly, there is a need for an out-of-band traceback method that does not present limitations of packet marking and ICMP traceback.

Out-of band IP traceback using IP packets


The present invention relates to a method for fabricating a single crystal silicon thin film at the desired location to the desired size from an amorphous or polycrystalline thin film on a substrate using laser irradiation and laser beam movement along the substrate having the semiconductor thin films being irradiated. This method comprises the steps of: forming a semiconductor layer or a metal thin film on a transparent or semi-transparent substrate; forming a single crystal seed region on the substrate of the desired size by a crystallization method using laser irradiation; and converting the desired region of the semiconductor layer or metal thin film into a single crystal region, using the single crystal seed region.

1. Field of the Invention
The present invention relates to a method for fabricating a semiconductor thin film, and more particularly to a method for fabricating a single crystal silicon thin film at the desired location to the desired size from an amorphous or polycrystalline thin film on a substrate using laser irradiation and laser beam movement along the substrate having the semiconductor thin films being irradiated.
2. Description of the Prior Art
Generally, a thin film transistor (hereinafter, referred to as TFT), a core switching device, which is used in LCD or OLED using organic EL material, is the most important semiconductor device for the performance of a flat panel display (hereinafter, referred to as FPD).
Mobility or leakage current, a measure of the TFT performance, greatly varies depending on the state or structure of a silicon (Si) thin film, which forms an active layer, a channel for charge carrier transport. In the case of a currently commercially available LCD, the active layer of most TFTs is made of an amorphous silicon (a-Si) thin film.
Since a-Si TFT using a-Si has a very low mobility of about 0.5 cm2/Vs, there is a limitation in making all switching devices required in LCD, using a-Si TFT. This is because a switching device for a peripheral circuit of LCD needs to be operated at a very high speed, but this high speed cannot be achieved with a-Si TFT.
Thus, switching parts for the peripheral circuit, such as a driver circuit, various controllers, and a digital-analogue-converter (DAC), etc., are formed of switching devices integrated on single crystal Si to cope with a high-speed requirement for the LCD driving. On the other hand, since a-Si TFT has a switching function while showing a characteristic of low-leakage current required for ensuring image quality, it is used as a pixel-switching device.
TFT using poly-crystal Si has a high mobility of several tens to several hundreds cm2/Vs and thus can exhibit high driving speed suitable for the periphery circuit. Thus, formation of poly-Si on a glass substrate allows a pixel region and also a peripheral circuit region to be realized.
Accordingly, in the case of poly-Si TFT, separate part mounting processes required for the formation of the peripheral circuit are not required and the peripheral circuit can be formed simultaneously with a pixel region, so that a reduction in part costs for the peripheral circuit can be expected.
In addition, because of high mobility, poly-Si allows TFT to be produced at a smaller size than existing a-Si and enables the peripheral circuit and the pixel region to be formed by an integration process. Thus, making linewidth fine becomes easier so that poly-Si TFT can realize high resolution as compared to a-Si TFT-LCD.
Furthermore, poly-Si TFT can show a high-current characteristic and thus is suitable for use in OLED, a current drive type display of the next generation FDP. Thus, studies to form poly-Si and fabricate TFT on a glass substrate are actively conducted at the most recent.
In order to form poly-Si on a glass substrate, a method is typically used, in which a-Si is deposited and then crystallized into poly-Si by thermal treatment. Since the glass substrate is deformed at a higher temperature than 600° C., excimer laser annealing (hereinafter, referred to as ELA) which crystallize only a-Si without causing damage to the substrate is typically used for crystallization. Generally, upon crystallization using ELA, a-Si is irradiated with a laser so that it is melted and re-solidified to produce poly-Si. Upon crystallization, grains are randomly formed such that they have various sizes ranging from several tens nm to a few μm depending on laser irradiation conditions.
Generally, as the size of grains is increased, the mobility of a TFT device is increased and the range of parts, which can be integrated upon the integration of the peripheral circuit, becomes wider. Thus, it is preferred to obtain ELA conditions where the greatest possible size of grains can be obtained, but the greater the size of grains, the worse the uniformity of grain distribution. This causes a degradation in uniformity of device characteristics, and as a result, causes a problem in view of reliability.
Accordingly, in applying ELA-crystallized poly-Si in LCD, there is applied poly-Si having grains of a suitable size in a range where uniformity is ensured. In this case, however, poly-Si TFT having high mobility can not be fabricated due to a limitation on grain size, and thus, there is necessarily a limitation in integrating the peripheral circuit.
U.S. Pat. Nos. 6,368,945 and 6,322,625 disclose a crystallization method where large sizes of grains are obtained while ensuring uniformity. The principle of this method which is called "sequential lateral solidification" (SLS) will now be described.
FIG. 1 is a schematic view of a laser system for carrying out a SLS process. As shown in FIG. 1, a substrate 110 deposited with an a-Si film 120 is placed on a stage 100 and first irradiated with a laser beam 130 through a mask 140. In this case, there can be various patterns in the mask 140.
A typical example of this mask is a slit-shaped mask 200 as shown in FIG. 2a. In the mask 200, slits 210 having a width 220 and a length 230 are patterned. As laser beam is irradiated through the mask, the laser beam passed through the mask is irradiated in a beamlet form, and the irradiated laser beam has such energy that a-Si can be completely melted.
FIG. 3a is an enlarged view of one slit. In FIG. 3a showing a condition before laser irradiation, the reference numeral 310 represents the width of a region exposed through a slit 330, and a-Si 320 is present before exposure to laser irradiation. FIG. 3b shows a condition immediately after laser was irradiated through a slit (condition where laser was irradiated for several tens nanoseconds and then cut-off). In this case, an exposed region was melted into a liquid silicon 360, the boundary between the liquid silicon 360 and the a-Si silicon 340 is formed at the edge of the slit, and a fine poly-Si 350 is formed at the boundary. With the passage of time, the growth of grains is progressed toward the slit center, using the poly-Si 350 as a seed. In a growth process of grains, the growth of grains having slow growth rate is inhibited by grains having fast growth rate so that only some grains are continued to grow. The interface 380 between poly-Si and liquid Si-is continued to move, and ultimately, the poly-Si and the liquid Si meet with each other at the slit center as shown in FIG. 3d. In this case, the grown grain size 320 is approximately a half of the slit width. If the slit width is larger or the supercooling rate of the melted silicon after laser irradiation is fast, nucleation can occur within the liquid silicon 361 before the grains grown from both edges of the slit meet with each other at the boundary 381.
Since this circumstance is undesired, it is important that the laser irradiation conditions, the substrate temperature and the form of a slit are optimized so that the nucleation does not occur.
After the first laser irradiation was completed, a location for laser beam irradiation is shifted by a length of 450 as shown in FIG. 4a, and then, second laser irradiation is conducted through a slit. After the second laser irradiation, silicon between slit boundaries 420, 421 is converted into a liquid silicon 460, and a poly-Si region 440 which was formed after the first irradiation remains intact and is re-crystallized. In this case, at the boundary 421, a fine poly-Si region is formed, and then the growth of grains is progressed using the formed poly-Si as a seed, but at the boundary 420, the growth of grains is progressed using a region excluding the grains melted after the second irradiation among the grains formed after the first irradiation. as a seed. As a result, a structure as shown in FIG. 4c is obtained. In other words, a boundary 470 which is formed by progressing the grain growth from both sides of the slit after the second irradiation is moved by a distance 491 which was shifted from the original location for the second irradiation.
By this procedure, the grain size becomes larger due to an increase in grain length in the scanning direction. Furthermore, upon the second irradiation, since the seed crystal and a new crystal undergo continuous growth in a state where crystal orientation is not changed, a boundary 480 disappears.
FIG. 5a shows a condition after the laser beam was moved in any length while the above procedure was repeated. The lower portion of FIG. 5a shows a procedure where grains, which have been continued to grow in one direction, are present as an elongated form, and growing interfaces 520, 521 of grains, which have been grown from slit boundaries 510, 511 (, FIG. 5A ) after exposure to a slit at a front stage of growth, are grown into a liquid silicon 530.
Then, the scanning procedure is progressed to a point 551, and an a-Si region 550 is crystallized, thereby giving a structure as shown in FIG. 5b. The scanned distance is approximately equal to the reference numeral 580, and the length of the grown grains corresponds to the scanned distance 580. Since the slit is patterned according to the mask, movement of the laser beam by a given scanned distance results in formation of poly-Si patterns as shown in FIGS. 2b and 2c. The respective poly-Si patterns have a grain structure as shown in FIG. 5b. As shown in FIG. 5b, at the initial region where scanning was initiated, there is a region having many fine grains, i.e., a region shown by the reference numeral 560, since many grains competitively grow. Above the region 560, there is a region having elongated grains, i.e., a region shown by the reference numeral 570. The results of actual experiments indicate that the region 560 is smaller than 1 μm that is negligibly small in a patterned region of poly-Si ("Sequential lateral solidification of thin silicon films on SiO2", R.S. Sposil and James S. Im, Appl. Phys. Lett., 69(19), 2864(1996)).
The SLS method is advantageous in that various shapes are obtained according to the shape of a mask, and for some masks, a single crystal Si island region can be selectively formed at a portion where a channel region of TFT is formed (U.S. Pat. No. 6,322,625).
Thus, the use of this method allows a poly-Si structure, the uniformity of device characteristics, and improvement in device performance to be obtained.
However, in a Si thin film obtained by SLS, if a regularity in the formation of a single crystal Si array having rectangular or hexagonal arrangement, and a single crystal Si island, does not coincide with the design of pixel and peripheral circuit arrangements, the uniformity of device characteristics is adversely affected.
Thus, in the existing SLS method, there can be a limitation in view of a design since a mask design for crystallization must match with pixel and peripheral circuit designs.
Furthermore, a method of making a single crystal among the SLS methods is to form a single crystal Si island in the strict sense and thus grain boundaries are present in several places of a substrate. Thus, if the pixel or the peripheral circuit is configured around the grain boundaries, excellent device characteristics and uniformity can be expected.
As a result, an ultimate solution to ensure excellent device characteristics and uniformity in any design scheme will be a method wherein single crystal silicon is formed over the entire substrate, or single crystal Si is grown only on a peripheral circuit portion and the remaining pixel region is kept at the state of a-Si so that single crystal Si having an excellent switching property for the peripheral circuit is formed outside the pixel region having low leakage current, thereby fundamentally preventing formation of the grain boundaries capable of causing non-uniformity.
For this purpose, according to the present invention, a method in which single crystal Si is easily formed at the desired location to the desired size using a simpler mask is proposed.

Method for fabricating single crystal silicon film


The difficulties and drawbacks of the previous-type systems are overcome by the present antenna system, alone and in combination with a wireless access point. The present antenna system includes a plurality of antenna elements for providing a respective plurality of communications signals over a wireless channel. An isolating structure is provided, selectively positioned with respect to the antenna elements, for selective varying signal isolation between the respective antenna elements. In this way, the present system is selectable between a high-throughput/short-range configuration and a low-throughput/long-range configuration.

The present invention is directed to the field of wireless networking, particularly as applied to different types of wireless networks having different implementation objectives. In a typical local area network (LAN), it is necessary for users to make a "hardware" network connection in which a client device (e.g. a personal computer system) is connected to a wire, which in turn is plugged into a socket for accessing a wired network. However, in using a wired LAN connection, a client device must be operated from a fixed position. This may be acceptable when using a stationary desktop terminal. However, if a laptop or handheld computer is used, it is necessary for the user to disconnect from the network when moving from place to place. Also, it cannot be assumed that a new location will have a network socket for reconnecting. This can be a significant limitation in enviromnents where it is important for a user to maintain a constant network connection.
Wireless local area networks (WLAN's) are becoming an increasingly popular alternative to a common wired LAN. In a WLAN, users make a wireless connection to the network. In this way, a user can move from location to location with a client device within a specified WLAN coverage area and maintain a constant connection to the network. This is highly advantageous since it enables the user to set up anywhere within a coverage area without requiring access to a network port. It also saves the user the inconvenience of fumbling with wires and plugs, while insuring continuous network connectivity for downloads and communications.
A client device can include a radio card having suitable radio circuitry for converting between electronic signals, internal to the device, and radio signals. The radio card also includes an antenna arrangement for exchanging radio signals with a wireless access point (AP). A typical AP also includes an antenna arrangement for exchanging radio signals with the client device, and radio circuitry for converting between the exchanged radio signals and electronic signals suitable to the wired network. Typically, such network signals are in accordance with the Ethernet protocol as specified in the IEEE 802.3 standard. Additionally, the radio signals are typically in accordance with the IEEE 802.11 wireless protocol.
In the marketplace, there are various WLAN implementations to satisfy various needs. Generally, a particular market implementation may require high-throughput connectivity where another may require extended radio range at the expense of throughput. For example, in the enterprise market, there may be a number of mobile clients such as laptop systems in a relatively small area, e.g. a conference room. In such an enterprise rollout, each mobile client might require high throughput, possibly for downloading audio-visual multimedia files. In such a case the clients would all be within relatively close proximity to the AP, so throughput would not be penalized by excessive distance from the AP. On the other hand, in a vertical market, wireless communications would be required over a large physical area, such as a warehouse or a large retail establishment, such as a department store. Low data rate wireless mobile client systems such as hand-held bar code scanner units would be employed for scanning inventory items and other such purposes, at locations physically remote from the AP. Hence in this market, low-throughput data is transferred over a large geographical distance, so extended signal range is required as opposed to high capacity.
Previously, it has been common to sell specific-type AP systems for each specific application: long range vs. high capacity. This has required manufacturers to produce different systems for each specific market. Providing distinct types of AP's contributes to overall expense, with manufacture, packaging, inventory, marketing, etc. Also, such systems do not offer flexibility to end-users having changing needs, where either throughput or range must be increased in a particular rollout at a later time after the original installation. Such systems are also not optimal in "hybrid" rollouts where throughput may be required in one portion of the coverage area and range is required in another. In these instances, the end-users would be required to add additional equipment to their WLAN, resulting in additional expense.

Configurable antenna for a wireless access point


Methods are described for identifying the amino acid residues of an antibody variable domain which may be modified without diminishing the native affinity of the domain for antigen while reducing its immunogenicity with respect to a heterologous species and for preparing so modified antibody variable domains which are useful for administration to heterologous species. Antibody variable regions prepared by the methods of the invention are also described.

Application of unmodified mouse monoclonal antibodies in the treatment of human diseases may be problematic for several reasons. First, an immune response against the mouse antibodies may be mounted in the human body. Second, the mouse antibodies may have a reduced half-life in the human circulatory system. Third, the mouse antibody effector domains may not efficiently trigger the human immune system.
Several reports relate to eliminating the foregoing problems. For example, Junghans et al., Cancer Res., 50:1495-1502 (1990), describe the utilization of genetic engineering techniques to link DNA encoding murine variable domains to DNA encoding human constant domains, creating constructs which, when expressed, generate a hybrid mouse/human chimeric antibody.
Also by genetic engineering techniques, the genetic information from murine hypervariable complementarity determining regions (hereinafter referred to as "CDRs") may be inserted in place of the DNA encoding the CDRs of a human monoclonal antibody to generate a construct encoding a human antibody with murine CDRs. This technique is known as "CDR grafting". See, e.g., Jones et al., Nature, 321, 522-525 (1986); Junghans et al., supra.
Protein structure analysis may be used to "add back" murine residues, again by genetic engineering, to first generation variable domains generated by CDR grafting in order to restore lost antigen binding capability. Queen et al., Proc. Natl. Acad. Sci. USA, 86, 10029-10033 (1989); Co, et al., Proc. Natl. Acad. Sci. USA, 88, 2869-2873 (1991) describe versions of this method. The foregoing methods represent techniques to "humanize" mouse monoclonal antibodies.
As a result of the humanization of mouse monoclonal antibodies, specific binding activity of the resulting humanized antibodies may be diminished or even completely abolished. For example, the binding affinity of the modified antibody described in Queen et al., supra, is reported to be reduced three-fold; in Co et al., supra, is reported to be reduced two-fold; and in Jones et al., supra, is reported to be reduced two- to three-fold. Other reports describe order-of-magnitude reductions in binding affinity. See, e.g., Tempest et al., Bio/Technology, 9:266-271 (1991); Verhoeyen et al., Science, 239:1534-1536 (1988).
Examples of therapeutic targets for antibody therapy in humans are T lymphocytes, or T cells. Various T cell-reactive antibodies have been described, primarily from murine hybridomas. The specific subsets of T cells recognized by these antibodies, and their cell surface targets, are differentiated by the Clusters of Differentiation System (hereinafter referred to as the "CD System"). The CD System represents standard nomenclature for molecular markers of leukocyte cell differentiation molecules. See Leukocyte Typing III White Cell Differentiation Antigens (Michael, ed. Oxford Press 1987), which is incorporated by reference herein.
So-called "pan T cell" markers (or antigens) are those markers which occur on T cells generally and are not specific to any particular T cell subset(s). Pan T cell markers include CD2, CD3, CD5, CD6, and CD7.
The CD5 cluster antigen, for example, is one of the pan T cell markers present on about 85-100% of the human mature T lymphocytes and a majority of human thymocytes. The CD5 marker is also present on a subset, about 20%, of B cells. Extensive studies using flow cytometry, immunoperoxidase staining, and red cell lysis have demonstrated that CD5 is not normally present on hematopoietic progenitor cells or on any other normal adult or fetal human tissue with the exception of the aforementioned subpopulation of B cells.
Further information regarding the CD5 marker is found in McMichael and Gotch, in Leukocyte Typing III White Cell Differentiation Antigens (Michael, ed. Oxford Press 1987). The CD5 molecule has also been described in the literature as reactive with immunoglobulins. See, e.g., Kernan et al., J. Immunol., 33:137-146 (1984), which is incorporated by reference herein.
There are reports of attempted treatment of rheumatoid arthritis patients with monoclonal antibodies against CD4. See Horneff, et al. Arthritis and Rheumatism 34:2, 129-140 (February 1991); Goldberg, et al., Arthritis and Rheumatism, Abstract D115, 33:S153 (September 1990); Goldberg, Journal of Autoimmunity, 4:617-630 (1991); Choy, et al. Scand. J. Immunol. 36:291-298 (1992).
There are reports of attempted treatment of autoimmune disease, particularly rheumatoid arthritis, with an anti-CD7 monoclonal antibody. See Kirkham, et al., British Journal of Rheumatology 30:459-463 (1991); Kirkham, et al., British Journal of Rheumatology 30:88 (1991); Kirkham, et al., Journal of Rheumatology 19:1348-1352 (1992). Lazarovits, et al., J. Immunology, 150:5163-5174 (1993), describe attempted treatment of kidney transplant rejection with a chimeric anti-CD7 antibody. There is also a report of an attempt to treat multiple sclerosis with an anti-T12 antibody and a pan T- cell antibody (anti CD-6). Hafler, et al. , Neurology 36:777-784 (1986).
None of the above attempts for therapy of human autoimmune diseases involve the use of unconjugated anti-CD5 antibodies.
Thus, there exists a need for the successful antibody therapy of T cell-mediated diseases such as autoimmune disease, graft-versus-host disease, and transplant rejection. As demonstrated by the foregoing, there also exists a need in the art for methods for the preparation of humanized antibodies useful in the treatment of various human diseases and not subject to the foregoing drawbacks.


When cold and in the uncoated state, the aerodynamic airfoil is substantially identical to a nominal airfoil determined by the Cartesian coordinates X, Y, Z′ given in Table 1, in which the coordinate Z′ is the ratio D/H where D is the distance from the point in question to a reference plane P0, located at the base of the nominal airfoil, and H is the height of this airfoil, measured from said reference plane up to the tip of the blade. The D and H measurements being taken radially with respect to the axis of the turbine whereas the X coordinate is measured in the axial direction of the turbine.

The present invention relates to an aerodynamic airfoil for a turbine blade.
In particular, the invention relates to the aerodynamic airfoil for a fixed guide blade of a gas turbine and more particularly a high-pressure turbine of the type used in an aircraft turbomachine.
Such an airfoil must ensure that the turbine has the desired efficiency, and to do this it must be such that the airflow around this airfoil is sound, that is to say such that it causes substantially no turbulence deleterious to the overall efficiency. In addition, it must withstand high mechanical stresses and allow these to be distributed within the blade so as to prevent it from wearing prematurely. In other words, the aerodynamic airfoil must allow the aerodynamic and mechanical performance of the blade to be optimized.
Moreover, the airfoil must be able to be correctly fitted into the inner and outer platforms of a complete blade and be able to be manufactured without undue difficulty. In particular, for turbomachine application, the airfoil must allow the fitting of a cooling circuit so as to ensure thermal integrity of the blade, that is to say to avoid hot spots, in the operating range of the turbojet.

Optimized aerodynamic airfoil for a turbine blade


A solid oxide fuel cell component (12) comprises a plurality of solid oxide fuel cells (24) arranged in spaced apart relationship, and in electrical series, on a surface of the porous gas permeable support structure (16). Each solid oxide fuel cell (24) comprises a dense gas tight electrolyte member (28), a porous gas permeable first electrode (26) and a porous gas permeable second electrode (30). Each electrolyte (28) is arranged in contact with a corresponding one of the first electrodes (26), each second electrode (30) is arranged in contact with a corresponding one of the electrolytes (28). Each of the first electrodes (26) is arranged in contact with the surface of the support structure (16). The interconnectors (32), the peripheral seal layer (34) and the electrolytes (28) are arranged to encapsulate all of the first electrodes (26) except for the surfaces of the first electrodes (26) in contact with the surface of the support structure (16) to prevent leakage of reactant from the first electrodes (16).

One known planar solid oxide fuel cell stack is described in European patent applications EP0668622A1 and EP0673074A1. These describe a planar solid oxide fuel cell stack comprising a plurality of solid oxide electrolyte members, each solid oxide electrolyte member having an anode electrode on a first surface and a cathode electrode on a second opposite surface to form a fuel cell. At least one interconnector is provided to connect the anode electrode of one fuel cell with the cathode electrode of an adjacent fuel cell such that the solid oxide fuel cells are connected in electrical series. The fuel cells are arranged in a plane on one or both sides of a hollow porous gas permeable support/distribution member, which supplies either fuel to the anode electrodes or oxidant to the cathode electrodes. The electrolytes of these solid oxide fuel cells are of the order of 1 μm to 50 μm, for example 10 μm.
The main problems with all solid oxide fuel cells are the high manufacturing costs, poor thermal expansion compliance and limited operational temperature range. The poor thermal expansion compliance of solid oxide fuel cells makes them intolerant to temperature differences and to thermal shocks.
A further problem with all solid oxide fuel cells is that the voltages are less than the Nernst value due to electrochemical and electrical losses in the fuel cells. These losses depend on the current density. The losses are due to activation in the electrodes, diffusion in the electrodes and porous gas permeable support member, electrolyte/electrode interfacial resistance, current collection in the electrodes and ionic resistance in the electrolyte. The activation losses dominate at low currents, the diffusion losses dominate at high currents and the resistive losses dominate at intermediate and high currents. Losses also arise due to current flow through the interconnectors.
Also leakage losses through the electrolyte, interconnectors, and around the periphery of the fuel cells gives rise to further losses. Voids and micro cracks through the components or leakage around the periphery of the components impair the electrochemical performance of the fuel cells in three respects. Firstly there is a loss of current by diffusion or leakage of fuel or oxygen. Secondly there is a loss of voltage due to reduced oxygen partial pressure difference across the electrolyte membrane of the fuel cell. Thirdly there is increased resistance in the anode electrodes due to the nickel electrodes becoming oxidised to nickel oxide.
Other losses may arise due to oxygen ion leakage currents in the interconnectors and in the support member, if these posses ionic conductivity. Further losses may arise due to spurious fuel cells formed between an anode of one fuel cell and the cathode of an adjacent fuel cell if the cathode of one fuel cell contacts the electrolyte of the adjacent fuel cell. The interconnector short-circuits the spurious fuel cell.
Another problem with solid oxide fuel cells is the chemical interaction between the substrate and the anode electrode.

Solid oxide fuel cell component and a method of manufacturing a solid oxide fuel cell component


A system and method for migrating a guest bridge are provided. An example method includes maintaining at a guest bridge a set of forwarding tables including a set of mappings from a network address to at least one virtual network interface of a set of virtual network interfaces. The method includes receiving at the guest bridge a notification that the guest bridge has migrated to a target host machine. The target host machine includes a set of physical network interfaces, and each physical network interface of the set of physical network interfaces is coupled to a network. The method further includes responsive to the notification, updating the set of forwarding tables.

A network bridge may be used in computer networks to interconnect two local area networks together and separate network segments. A segment may be a section of a network that is separated by bridges, switches, and/or routers. The bridge, also known as a layer 2 switch, is typically a hardware device used to create a connection between two separate computer networks or to divide one network into two networks.
The bridge is a layer 2 device in the Open System Interconnection (OSI) model, meaning that it uses the media access control (MAC) address information to make decisions regarding forwarding packets. The OSI model is a model of communication upon which hardware and software may be developed and connected.


A method for dynamically adjusting the frequency of content-transmissions to a communication device is disclosed. The device logs and reports to a network entity, such as a content server, how often content-related user-interaction has occurred on the device, such as simply when the last such interaction occurred. The network entity then determines a frequency at which to transmit content to the device, based on how often the content-related user-interaction has occurred on the device. And the network entity then transmits content to the device at the determined frequency. The invention can be usefully employed to adjust the frequency at which content-channel updates or content-catalog updates are transmitted to communication devices such as cellular wireless devices for instance.

With the widespread growth of the Internet and advances in communication technology, users of communication devices can conveniently gain access to a virtually unlimited quantity of information and services. This is especially true with wireless communication devices, such as cell phones and wirelessly-equipped personal digital assistants for instance, which provide users with access to such information from virtually any location where wireless coverage exists.
One way for users to most conveniently access content is to subscribe to a service where content is automatically transmitted to their devices. In an increasingly common arrangement, for instance, a server may be set to periodically transmit the latest version of particular content to subscriber devices. That way, when a user seeks to access content, the user can conveniently access the latest received version of the content from local data storage, without the need to wait for the content to download the content at the time. Further, such automated transmission of content can be particularly useful with wireless communications, where devices tend to have sporadic or limited network connectivity. In that context, a wireless communication device may receive content updates while online, and a user of the device may thereafter access the updated content from local data storage regardless of whether the device is online or offline at the time.
Such automatic transmissions of content can be used for various purposes. By way of example, automatic content transmissions can be used to maintain one or more "content-channels" on a communication device. In practice, the communication device may be programmed with a channel-presentation program that allows a user to selectively view content of one or more channels (akin to TV channels), each of which may be focused on a particular subject (such as sports, weather, or pop-music, for instance). For each channel, a network server may be arranged to periodically push the latest channel content to the device. Conveniently, whenever a user of the device then selects a desired channel to view, the channel-presentation program can present the user with the latest set of content that was downloaded for that channel, without having to wait for the device to download the content.
As another example, automatic content transmissions can be used to maintain on a communication device an up-to-date content-catalog, i.e., a listing of downloadable-content, such as content that is available for free-download or for purchase. Rather than maintaining such a content-catalog strictly online and requiring real-time online browsing through the catalog, the device can maintain a local copy of the content catalog. To facilitate this, a network server (e.g., a content server) may be programmed to periodically transmit the latest version of the content-catalog to the device. Conveniently, when a user of the device seeks to view the content-catalog, the user could view the up-to-date local copy without having to wait for the device to download the catalog from the server.

Method for dynamically adjusting frequency of content transmissions to a communication device


A computer system includes a voltage regulator that supplies power to a component. The component may provide a signal indicating an amount of current the component consumes under a high utilization operating condition. The voltage regulator may then determine the slope of a load line using this signal.

Computer systems are becoming increasingly pervasive in our society, including everything from small handheld electronic devices, such as personal data assistants and cellular phones, to application-specific electronic devices, such as set-top boxes, digital cameras, and other consumer electronics, to medium-sized mobile systems such as notebook, sub-notebook, and tablet computers, to desktop systems, workstations, and servers. Computer systems typically include one or more processors. A processor manipulates and controls the flow of data in a computer by executing instructions. To provide more powerful computer systems for consumers, processor designers strive to continuously increase the operating speed of the processor. Unfortunately, as processor speed increases, the power consumed by the processor tends to increase as well.
Historically, the power consumed by a computer system has been limited by two factors. First, as power consumption increases, the computer tends to run hotter, leading to thermal dissipation problems. Second, the power consumed by a computer system may tax the limits of the power supply used to keep the system operational, reducing battery life in mobile systems and diminishing reliability while increasing cost in larger systems.
One method of reducing the amount of electric power drawn by a computer system is to design the voltage regulator (alternatively referred to as the power supply/source, voltage supply/source, or Vcc supply/source) to operate according to a particular load line. The load line may be designed to meet the specified supply voltage and supply current characteristics of a component.
Unfortunately, not all components have identical characteristics. For example, processors operating at different frequencies tend to exhibit different current consumption characteristics. Thus, a load line of a voltage regulator appropriate for supplying power to one component may not be appropriate for supplying power to another component.
One or more embodiments of the present invention may address this and other issues associated with the prior art.
It is to be noted that the elements of the figures may not be drawn to scale relative to one another.

Method and apparatus for configuring a voltage regulator based on current information


The reflex-type screen includes an aluminum film reflecting layer for reflecting incident light, a lower adhesive layer which is made of adhesive agent, a polarization layer for transmitting the polarized light, a upper adhesive layer which is made of adhesive agent, and a surface diffusion layer for transmitting a part of the incident light and diffusing and reflecting anther part of the incident light, and the upper adhesive layer includes a diffusing agent dispersedly.

1. Field of the Invention
The present invention relates to a reflex-type screen that reflects polarized light. More particularly, the invention relates to the reflex-type screen for reflecting back a polarized image projected by an optical engine.
2. Description of the Related Art
Conventionally, there is provided a reflex-type screen including a polarization layer and a surface diffusion layer which are stacked in an order on a rolled aluminum film reflecting layer via an adhesive. In this reflex-type screen, on the surface of the aluminum film reflecting layer, a microscopic linear unevenness is formed, which is called hairline and extends in a direction. The conventional reflex-type screen diffuses and reflects the light by the hairline, thereby improving the view angle of the screen.
The hairline is the surface unevenness, which is generated by rolling, and the diffusion performances of horizontal direction and vertical direction on the screen are different from each other due to the hairline.
In addition, the art of adding a light diffusion ink layer in which a diffusing agent is doped to a light reflecting ink layer is known, in order to improve the diffusion performance of the screen. (Japanese Patent No. 2,953,289)
However, the hair line on the aluminum film reflecting layer is inevitably generated when the aluminum film is formed by rolling, so it is difficult to control the shape of the hair line as desired. Therefore, it is difficult to improve the diffusion performance of the screen by improving the diffusion performance of the aluminum film reflecting layer. In addition, because the art of adding a light diffusion ink layer increases the number of the layers of the screen, there is a problem that the production cost is expensive.
Therefore, it is an object of the present invention to provide a reflex-type screen, which are capable of overcoming the above drawbacks accompanying the conventional art. The above and other objects can be achieved by combinations described in the independent claims. The dependent claims define further advantageous and exemplary combinations of the present invention.

This patent is subject to a terminal disclaimer.


Multilayer radiation curable liquid coating compositions are provided that include one or more UV oligomers including at least one aliphatic urethane acrylic oligomer; at least one acrylate diluent monomer selected from a mono-, bi-, and tri-functional reactive acrylate diluent monomers; at least one photo-initiator; at least one UV absorber; at least one hindered amine light stabilizer; and at least one antioxidant, where the liquid composition does not comprise a solvent and does not comprise an adhesion promoter. The UV oligomer in the base coat composition has elongation higher than 200% and tensile strength lower than 1000 psi. The UV oligomer in the top coat composition has tensile strength higher than 5000 psi. A coating system is provided that includes a liquid primer coat composition, a liquid base coat composition and a liquid top coat composition. The cured film has good electrical insulation and UV resistance, and passes thermal cycle, damp heat and humidity freezing tests that are part of UL certification processes. The coating compositions are useful for coating substrates including SiOx substrates.

Thin film solar panels are used outdoors and exposed to wind, rain, snow, and sunlight. Various attempts have been made to protect solar panels for their outdoor application. One of the most common methods is to use a lamination method to laminate the solar cell to a polymer sheet or glass substrate through an adhesive. Ethylene vinyl acetate (EVA) and other low MVTR polymer and silane modified polymers are used as the adhesive. However, such methods have high production cost and as well a discontinuous process.
U.S. Pat. No. 6,500,877 and U.S. Pat. No. 6,905,735 describe ultraviolet light curable paint compositions and method of applying such compositions.

Coating composition, substrates coated therewith and methods of making and using same


Media and apparatus for managing usage of utilities are disclosed. Generally, each involves receiving representation of utility service usage at a load, receiving and storing in a storage device a usage range representation comprising at least one expected value of utility input to the load and/or at least one expected value of output from the load, and producing a control signal for use by a utility service controller when usage is outside of usage range representation. Control signal is operable to cause the utility service controller to regulate or interrupt the supply of the utility service to the load.

1. Field of Invention
This invention relates to apparatus, methods, media, and signals for managing utility usage, in particular for controlling excessive or non-optimized usage of a utility, controlling a supply of a utility service to a load, facilitating monitoring of subscriber usage of a utility service, and billing a subscriber for utility service usage.
2. Description of Related Art
With the increasing prospect of rising natural gas prices, energy shortages, and water shortages looming on the horizon, there is a need for smart management of utility service usage. As national and worldwide energy resources dwindle, there is an increasing need to manage the efficiency of energy and water use. Recent years have seen an increased prevalence of energy blackouts, brownouts, and water restrictions during certain times of the year in order to conserve available resources of energy and water. As we move into the twenty first century the conservation of energy and water will gain increasing importance, requiring careful management of utilities.
Many existing systems used to manage utilities do so for control in disaster or abnormal conditions. For example some systems involve shutting off the supply of utilities during an emergency, such as in an earthquake or in response to leak detection or a short circuit. These systems generally monitor for faults or leaks in the utility system and respond by turning off a circuit breaker or shutting off valves and evacuating gases and water in order to prevent further damage to a dwelling or building.
However, in these systems there is no monitoring of utility usage and there is no subsequent controlling of utility supply in response to measurements made while monitoring the utility usage. Underscoring that need is the increased advantage of minimizing utility usage costs for inefficient use of energy, and the added safety precautions the system would present when utilizing appliances which have not been optimized for energy usage. Moreover, monitoring the usage of utilities would also naturally facilitate the tracking of utility expenditures, and would provide an opportunity to incorporate monitoring and controlling utilities with a billing process to provide payment for utility usage.
What would be desirable therefore are methods and apparatus which manage usage of a utility service.

Media and apparatus for controlling usage of utilities

Smart Disaster Response Technologies, Inc.


An aeration-less water treatment system includes an anaerobic treatment tank which subjects sewage supplied by a pump to anaerobic treatment by causing the sewage to upflow, and an aerobic treatment tank which subjects anaerobically treated water to aerobic treatment by letting the anaerobically treated water to downflow by natural downflow. The aerobic treatment tank includes an aerobic filter bed section in which carriers to which aerobic microorganisms are adhered are arranged. The aerobic filter bed section subjects the anaerobically treated water to decomposition treatment by putting the anaerobic treatment water in contact with the aerobic microorganisms adhered to surfaces of the carriers. The aerobic filter bed section is provided with an air port which takes in air into under normal pressure, thereby activating the aerobic microorganisms.

1. Field of the Invention
The present invention relates to an aeration-less water treatment system which performs an aerobic treatment by taking in air by making use of natural downflow of sewage.
2. Description of the Related Art
Conventionally, a water treatment system which cleans sewage has been proposed.
This water treatment system, as shown in FIG. 1, comprises an anaerobic treatment tank 101 and an aerobic treatment tank 102. In the anaerobic treatment tank 101, an anaerobic lower cavity section 103, an anaerobic filter bed section 104 and an anaerobic upper overflow section 105 are arranged in the named order from the lower side to the upper side. With driving of a pump 107, sewage 106 flows through a water pipe 108 and is supplied to the anaerobic lower cavity section 103. Then, the sewage 106 flows, as an upward stream, into the anaerobic filter bed section 104.
A great number of plastic carriers are disposed within the anaerobic filter bed section 104. Anaerobic microorganisms are adhered to the surface of each plastic carrier. Organic matter in the sewage, which has entered the anaerobic filter bed section 104, comes in contact with the anaerobic microorganisms. As a result, a predetermined amount of the organic matter is decomposed and removed by the decomposing function of the anaerobic microorganisms.
When the water, from which the predetermined amount of organic matter has been decomposed and removed by the decomposing function of the anaerobic microorganisms, is filled up to the anaerobic upper overflow section 105, the water is output as anaerobic treatment tank outlet water 109, and is supplied to the upper part of the aerobic treatment tank 102 through a water pipe 110. Reference numeral 109a denotes the water surface of the anaerobic treatment tank outlet water 109.
In the aerobic treatment tank 102, an aerobic filter bed section 111 and an aerobic lower cavity section 112 are arranged in the named order from the upper side to the lower side. A diffusion pipe 113 is disposed in the aerobic lower cavity section 112. With driving of a blower 114, air is taken in through air pipes 115 and bubbles are fed into the aerobic lower cavity section 112 from the diffusion pipe 113. Thereby, aeration treatment is performed.
The water, which has been supplied from the anaerobic treatment tank 101 into the aerobic treatment tank 102, is delivered to the aerobic filter bed section 111 as a downward stream. A great number of plastic carriers are disposed in the aerobic filter bed section 111, as in the anaerobic filter bed section 104. Aerobic microorganisms are adhered to the surface of each plastic carrier. At this time, the organic matter remaining in the anaerobic treatment tank outlet water 109 flows, as a downward stream, in the aerobic filter bed section 111, and comes in contact with the aerobic microorganisms and with the air that is supplied from the diffusion pipe 113. As a result, the residual organic matter is decomposed and removed by the decomposing function of the activated aerobic microorganisms. Reference numeral 116 designates a water pipe for discharging treated water, which has been drained from the aerobic filter bed section 111, to, e.g. a subsequent disinfection process (see Jpn. Pat. Appln. KOKAI Publication No. 11-285696).
As regards the above-described water treatment system, however, the following problems have been pointed out.    (1) The running cost of the blower 114 is high.
The diffusion pipe 113 is disposed in the aerobic lower cavity section 112, and bubbles are fed into the aerobic lower cavity section 112 from the diffusion pipe 113 by driving the blower 114. Since the driving energy for the blower 114 is large and the blower 114 needs to be driven at all times, the running cost of the blower 114 is high. In other words, it is difficult to perform water treatment at low running cost without driving the blower 114. Normally, the ratio of the driving energy cost of the blower 114 to the total running cost of the sewage treatment is about 50% to 70%. There is a demand for a decrease in the running cost of the blower 114.    (2) The treatment performance of the aerobic treatment becomes unstable.
In the water treatment system, if the blower 114 is dispensed with or if the air amount of the blower 114 is reduced, the oxygen in the aerobic lower cavity section 112 becomes deficient. As a result, proliferation of aerobic microorganisms, which require oxygen for their survival, would be suppressed, the microorganisms would be killed, and the treatment performance of the aerobic treatment tank 102 would considerably deteriorate.    (3) The process of reducing nutrient salts, such as nitrogen and phosphorus, is difficult to carry out only with the aerobic treatment.
When nitrogen, phosphorus, etc. are to be treated, it is necessary to adopt a method using microorganic reactions based on a nitrification reaction by anaerobic treatment and a denitrification reaction by aerobic treatment, or a method using a photosynthesis reaction. In this case, a circulation process from aerobic treatment to anaerobic treatment is needed. In the above-described water treatment process, however, if the circulation process from aerobic treatment to anaerobic treatment is adopted, aerobic microorganisms would mix in the anaerobic treatment tank 101, leading to degradation in anaerobic treatment. Thus, the circulation process from aerobic treatment to anaerobic treatment cannot be adopted, and as a result the process of reducing nitrogen, phosphorus, etc. is difficult to perform.
In the case of adopting the method using the photosynthesis reaction, the upper part of the treatment tank may be opened. However, only the opened part is irradiated with light, and no photosynthesis reaction takes place in other parts excluding the opened part. As a result, it is difficult to treat nutrient salts such as nitrogen and phosphorus.


In one aspect, a light-mixing optic is disclosed for use with one or more light sources such as light emitting diodes. In one embodiment, an exemplary optic can include an optical body disposed about an optical axis and having an input and an output surface and a peripheral surface extending between the two. The input surface can form a central cavity for receiving light from the light sources, if not the light sources themselves. Further, the input surface can be shaped to refract substantially all of the light received from the one or more light sources away from the optical axis to the peripheral surface of the optic, where that light (e.g., substantially all of it) can be redirected (e.g., via total internal reflection or specular reflection) to the output surface. An array of micro-lenses or other surface features can be formed on the output surface. Further embodiments, as well as exemplary design methods, are also disclosed.

Optics for high-power light sources, such as light emitting diodes, can have a wide variety of configurations. In many cases, a particular configuration can be characterized by the illumination pattern it produces, by the coherence, intensity, efficiency and uniformity of the light it projects, and/or in other ways. The application for which the lens and/or lighting system is designed may demand a high level of performance in many of these areas.
Many applications call for the ability to mix light from multiple sources, e.g., sources producing light of different colors. Further, light mixing is also useful for systems with large light sources. In both cases, it is difficult to produce uniformly mixed light and reduce source imaging. To date, light-mixing systems have typically provided textured surfaces to spread the light from a light source. The efficiency and capabilities of such systems are limited and their illumination characteristics are typically sub-par.
Accordingly, there is a need for improved light-mixing optics and systems.


When a molded portion of a weather strip is molded, a slit, from which a core body is taken out, is formed in a mounting base portion thereof. Also, plural blocking clips are provided at predetermined intervals along the slit. The blocking clips comprises a base portion, which constitutes a part of the mounting base portion, a fitting portion fitted into the slit, a lock portion locked on an inner surface of the mounting base portion, and an engaging projection formed in such a way as to project from the base portion. A fitting groove, into which the engaging projection is fitted, is formed in the mounting base portion. After a core body is taken out of a molded portion precursor, the blocking clip is attached thereto, so that the molded portion is obtained.

1. Field of the Invention
The present invention relates to a weather strip having a molded portion.
2. Description of the Related Art
Hitherto, a weather strip is attached to an opening portion or along a door peripheral edge of a vehicle, such as an automobile. When this kind of a weather strip is manufactured, an extrusion portion is formed like an elongated one by a publicly known extrusion molding method. Then, in a state in which an end part of the extrusion portion is set in a mold apparatus for molding a molded portion, the molded portion is continuously and connectedly molded to an end surface of the extrusion portion.
The mold apparatus used for connectedly molding the molded portion comprises a stationary mold, plural movable molds and a core mold. The core mold comprises a core body for forming a hollow portion, and also comprises an extending plate extending from the core body. When the molded portion is molded, first, an end portion of the extrusion portion having already been molded by a publicly known extrusion molding method is set in the core body by being fitted thereinto. Thus the extrusion portion is attached to the mold apparatus. Subsequently, each of the molds is disposed at a predetermined place and clamped. At this moment, a cavity for molding a molded portion is formed by using each of the molds. Then, unvulcanized rubber is injected and filled into the cavity through a gate (not shown) Subsequently, unvulcanized rubber is vulcanized. Then, each of the molds is opened. A product obtained by integrating the core mold with the vulcanized rubber (or molded portion precursor) is taken out therefrom. At that time, a slit is formed in the molded precursor owing to the presence of the extending plate.
Thus, the molded portion precursor having a hollow portion is obtained by taking the core body from the slit. Thereafter, opposite opening faces of the slit are bonded by adhesive at plural places. Thus, the molded portion is obtained. That is, a weather strip, in which this molded portion is integral with the extrusion portion, is obtained.
However, hitherto, anticipated design has been performed so that the molded portion precursor is molded to be wider than the extrusion portion by width of the slit so as to bond the opening faces of the slit. An operation of bonding the opening faces indispensably needs a step of compressing and holding the molded portion precursor in the direction of width thereof for a predetermined time in a state in which the adhesive is applied thereon. This results in a fear of increase in the number of working manhours, increase in the production cost, and reduction in productivity. Additionally, when the opening faces of the slit are bonded directly to each other, width of a mounting base portion is liable to be uneven. Consequently, there has been a fear of drawbacks, such as reduction in sealability of the molded portion.
In recent years, there has appeared a weather strip having a blocking member, instead of bonding the opening faces directly to each other, so as to counteract the drawbacks (see, for example, JP-UM-A-43050).
However, in the weather strip described in JP-UM-A-3-43050, mounting base portions thereof are simply and respectively inserted from both sides of a blocking member having a substantially H-shaped cross section. Thus, even when the mounting base portions would be bonded thereto by adhesive, there has been a fear that the mounting base portions outwardly slip off in the direction of width of the blocking member in a stage before the weather strip is attached to an opening portion or a circumferential edge of a door of a vehicle. Although it is considered that the width of the blocking member is narrowed in a part, into which the mounting base portions are fitted, so as to prevent the mounting portions from slipping off, there has been a fear that an operation of fitting the mounting base portions becomes relatively time-consuming, with the result of reduction in workability, thus, in productivity of the weather strip.


Secondary metabolites of viable plant cells are produced with the cells immobilized in a porous inorganic support. Immobilization includes the steps of: (a) preparing a support comprising a substantially uniform and porous matrix of inorganic material having a tensile strength of at least 500 MPa; (b) introducing a culture of viable plant cells into the pores of said matrix; (c) entrapping the plant cells by coating the matrix with a sol or colloidal suspension not interfering with the cell viability; and (d) immobilizing the entrapped cells within the matrix with a reactive gas including a carrier gas saturated with volatile SiO.sub.2 or organic modified SiO.sub.2 precursors. The tensile strength may be provided by impregnating the matrix with a gelling solution of SiO.sub.2 precursor for increasing stiffness of the matrix. The matrix may be a SiO.sub.2 or inorganic oxide matrices, in which the weight ratio between cell load and inorganic matrix ranges between 1.times.10.sup.-4 and 1.times.10.sup.-2. The immobilized cells are not released in solution over a period of 6 months and maintain their viability while producing secondary metabolites.

The most commonly used immobilization matrix is algal polysaccharide alginate, cross-linked with calcium ions as described in FEBS Lett. 103: 93-97 (1979) and 122: 312-316 (1980), Plant Cell Rep. 5: 302-305 (1986), and Appl. Microbiol. Biotechnol. 30: 475-481 (1989). Other methods include entrapment with polyurethane foam, described in Biotechnol. Bioeng. 33: 293-299 (1989), 35: 660-667 (1990), Appl. Microbiol. Biotechnol. 33: 36-42 (1990), 37: 397-403 (1991) and 35: 382-392 (1991).
The use of porous and amorphous sol-gel derived silica for entrapment of viable cells has been described in cases of non-plant cells, reported in J. Biotechnol. 30: 197 (1993), J. Ceram. Soc. Jpn. 100: 426 (1992), Biochim. Biophys. Acta 276: 323 (1972), Chemistry of Materials 6: 1605-1613 (1994) and Angew, Chem, Int. Engl. 34: 301-303 (1995). These latter cannot be considered as methods actually suitable for applications to higher plant cells, which are severely poisoned under the experimental conditions reported for immobilization of bacteria and yeast cells. As for processes applied to, and claimed for, plant cell immobilization, they entail some problems: first of all, processes based on simple adhesion to the surface cannot properly be considered as immobilization, since cell reproduction and the increase in biological mass unavoidably cause release of cells in solution.
Polyurethane foaming matrices may cause severe transport limitations to and from immobilized cells. One important drawback of these host matrices is their poor mechanical stiffness, so that prolonged use for industrial production in practice does not appear feasible.
Immobilization in alginate beads allows direct contact of cells with the gel matrix, so that the cells are inevitably subjected to a high concentration of a variety of ions and organic compounds, causing negative physiological effects.

Production of secondary metabolites with plant cells immobilized in a porous inorganic support


A telescoping assembly is attached to a base for supporting the assembly above a floor. The assembly includes nestable elongated members having threaded sleeves configured to tighten the members in place in a nested position and in an extended position. A trouble light hook is attached to a distal end of the elongated member which is most distal from the base when the assembly is in a fully extended position.

1. Field of the Invention
The present invention relates to stands, particularly to a stand adapted to hang articles there-from.
2. Description of the Related Art
When working with a trouble light, it is often difficult to find a convenient place to mount the light. What is needed is a device which will permit the mounting of a trouble light at various heights and in various locations, as needed.

Utility stand having threaded adjusting apparatus


In a non-volatile memory device, active fin structures extending in a first direction may be formed on a substrate. A tunnel insulating layer may be formed on surfaces of the active fin structures and bottom surfaces of trenches that may be defined by the active fin structures. A charge trapping layer and a blocking layer may be sequentially formed on the tunnel insulating layer. A gate electrode structure may include first portions disposed over top surfaces of the active fin structures and second portions vertically spaced apart from portions of the charge trapping layer that may be disposed over the bottom surfaces of the trenches, and may extend in a second direction substantially perpendicular to the first direction. Thus, lateral electron diffusion may be reduced in the charge trapping layer, and thereby the data retention performance and/or reliability of the non-volatile memory device may be improved.

1. Technical Field
Example embodiments relate to a non-volatile memory device and a method of manufacturing the non-volatile memory device such as, a non-volatile memory device including a charge trapping layer.
2. Description of the Related Art
Semiconductor memory devices, in general, may be classified as either volatile or non-volatile semiconductor memory devices. Volatile semiconductor memory devices such as dynamic random access memory (DRAM) devices and/or static random access memory (SRAM) devices may have a relatively high response speed. However, volatile semiconductor memory devices may lose stored data when power is lost. Although non-volatile semiconductor memory devices, such as electrically erasable programmable read only memory (EEPROM) devices and/or flash memory devices, may have a relatively slow response speed, such devices may maintain stored data even when power is lost.
In EEPROM devices, data may be electronically stored, e.g., programmed, or erased through a Fowler-Nordheim (F-N) tunneling mechanism and/or a channel hot electron injection mechanism. The flash memory device may be classified as either a floating gate type or a charge trap type, such as silicon oxide nitride oxide semiconductor (SONOS) type devices and/or metal oxide nitride oxide semiconductor (MONOS) type devices.
A SONOS or MONOS type non-volatile memory device may include a tunnel insulating layer formed on a channel region of a semiconductor substrate, a charge trapping layer for trapping electrons from the channel region, a blocking layer formed on the charge trapping layer, a gate electrode formed on the blocking layer, spacers formed on sidewalls of the gate electrode and/or source/drain regions formed at surface portions of the semiconductor substrate adjacent to the channel region.
FIG. 1 is a cross-sectional view taken along a word line of a conventional non-volatile memory device, and FIG. 2 is a cross-sectional view taken in a direction substantially perpendicular to the word line of the conventional non-volatile memory device.
Referring to FIGS. 1 and 2, a conventional non-volatile memory device 1 may include field insulating patterns 12 formed at surface portions of a semiconductor substrate 10 to define active regions 10a.
The conventional non-volatile memory device 1 may further include a plurality of memory cells 1a and 1b. Word lines 20 may extend on the semiconductor substrate 10 in a direction substantially perpendicular to an extending direction of the active regions 10a. A tunnel insulating layer 14, a charge trapping layer 16 and a blocking layer 18 may be disposed between the semiconductor substrate 10 and each of the word lines 20. That is, a plurality of gate structures 22 may be disposed on the semiconductor substrate 10, which may include the tunnel insulating layer 14, the charge trapping layer 16, the blocking layer 18 and the word line 20, and may extend in a word line direction. Source/drain regions 24 may be formed at surface portions of the active regions 10a adjacent to the gate structures 22, and channel regions 10b may be positioned underneath the gate structures 22.
The memory cells 1a and 1b may be disposed on the active regions 10a, and the memory cells 1a and 1b may be programmed or erased by applying a programming or erasing voltage to the word line 20 serving as gate electrodes. When a programming voltage is applied to the word line 20, electrons are trapped in trap sites of the charge trapping layer 16 from the channel region 10b through the tunnel insulating layer 14, and thus one bit of data may be stored in the charge trapping layer 14. When an erasing voltage is applied to the word line 20, electrons may be discharged from the charge trapping layer 16 into the channel region 10b through the tunnel insulating layer 14, and thus the stored data in the charge trapping layer 14 may be erased.
Each of the memory cells 1a and 1b may be used as a multi-level cell (MLC) to increase the data storage capacity of the non-volatile memory device 1. When either of the memory cells 1a and 1b is used as the MLC, it may be desirable to form the charge trapping layer 16 using a material having a high trap density. The high trap density of the charge trapping layer 16 may cause lateral charge diffusion in the charge trapping layer 16. For example, when a memory cell 1a is programmed and an adjacent cell 1b is erased, electrons 26 trapped in the charge trapping layer 16 may move from the programmed memory cell 1a towards the erased memory cell 1b, as shown in FIG. 1.
As a result of the migration of electrons, the lateral charge diffusion in the charge trapping layer 16 may deteriorate data retention performance and also deteriorate the reliability of the non-volatile memory device 1. When a reading voltage is applied to the word line 20 to read the data stored in the programmed memory cell 1a, lateral charge diffusion may be accelerated.

Non-volatile memory device and method of manufacturing the same


Acoustic isolators are disclosed herein. An example apparatus includes a transmitter to transmit an acoustic signal. The example apparatus also includes an acoustic isolator substantially surrounding a receiver, and the receiver is to receive the acoustic signal via an opening in the acoustic isolator. The transmitter and the acoustic isolator are coupled to a base. The acoustic isolator includes a first layer coupled to a second layer defining a plurality of spaces. The second layer is to provide an acoustic impedance mismatch.

An acoustic sensor is often employed on a downhole tool to measure properties of a subterranean formation. For example, the acoustic sensor may be used to determine formation compressional slowness, Stonely slowness, and/or other properties. Generally, a transmitter generates an acoustic signal that propagates toward the subterranean formation. The signal is refracted by the subterranean formation toward a receiver of the acoustic sensor, which receives the signal. The signal may then be processed to determine the properties of the subterranean formation.


Ultra high affinity antibodies with binding affinities in the range of 1010 M−1, and even 1011 M−1 are disclosed. Such antibodies include antibodies having novel high affinity complementarity determining regions (CDRs), especially those with framework and constant regions derived from either humans or mice. Methods of preparing and screening such antibodies, as well as methods of using them to prevent and/or treat disease, especially virus-induced diseases, are also disclosed.

The present invention relates to novel ultra high affinity neutralizing antibodies.
The current incidence of infection caused by resistant or difficult to control microbes has created a need for newer approaches to controlling such organisms, as well as to treating those already infected.
Among the more difficult infectious agents to control and treat are the viruses. For example, respiratory syncytial virus (RSV) is the major cause of acute respiratory illness in young children admitted to hospitals and the major cause of lower respiratory tract infection in young children. A major obstacle to producing an effective vaccine against such agents as RSV has been the issue of safety. Conversely, the use of immunoglobulins against such viral agents has proven of some value. For example, studies have shown that high-titred RSV immunoglobulin was effective both in prophylaxis and therapy for RSV infections in animal models.
An alternative approach has been the development of antibodies, especially neutralizing monoclonal antibodies, with high specific neutralizing activity. One drawback to this route has been the need to produce human antibodies rather than those of mouse or rat and thus minimize the development of human anti-mouse or anti-rat antibody responses, which potentially results in further immune pathology.
An alternative approach has been the production of human-murine chimeric antibodies in which the genes encoding the mouse heavy and light chain variable regions have been coupled to the genes for human heavy and light chain constant regions to produce chimeric, or hybrid, antibodies.
In some cases, mouse CDRs have been grafted onto human constant and framework regions with some of the mouse framework amino acids being substituted for correspondingly positioned human amino acids to provide a "humanized" antibody. [Queen, U.S. Pat. Nos. 5,693,761 and 5,693,762]. However, such antibodies contain intact mouse CDR regions and have met with mixed effectiveness, producing affinities often no higher than 107 to 108 M−1.
A humanized anti-RSV antibody with good affinity has been prepared and is currently being marketed. [See: Johnson, U.S. Pat. No. 5,824,307]
The production of ultra high affinity antibodies would be desirable from the point of view of both the neutralizing ability of such an antibody as well as from the more practical aspects of needing to produce less antibody in order to achieve a desirable degree of clinical effectiveness, thereby cutting costs of production and/or allowing a greater degree of clinical effectiveness for administration in the same volume.

Ultra high affinity neutralizing antibodies