Disclosed is an optical collimator-use lens component including: a thin tube; a partially spherical lens that has been fixed in an inner hole of the thin tube so that an insertion portion having a predetermined length is left, is made of glass whose refractive index is approximately uniform, and has translucent spherical surfaces, whose centers of curvature are approximately the same, at both ends of a cylindrical portion of the partially spherical lens; and an adhesive that bonds the partially spherical lens to the thin tube. An axial deviation amount between a center axis of the thin tube and an optical axis of the partially spherical lens is 5 μm or less. When a capillary tube, in whose inner hole an optical fiber has been fixed and whose axial deviation amount between an outer peripheral surface of the capillary tube and a core center of an end surface of the optical fiber is 1.5 μm or less, is inserted into the insertion portion of the thin tube and the end surface of the optical fiber is fixed at a position at which a distance of the end surface to a focal point position of the partially spherical lens becomes ±40 μm or less, emission light has an emission light bend of 0.2° or less with respect to the center axis of the thin tube.

The present invention relates to an optical collimator-use lens component, an optical collimator, a method of assembling the optical collimator-use lens component, and a method of assembling the optical collimator, with which an optical fiber for optical communications and a lens are optically coupled to each other and emission light from the optical fiber is converted into parallel light or parallel light is condensed by the lens and is brought into incident on the optical fiber.
When a high-speed and large-capacity optical fiber communications system is structured, many optical devices are used. The optical devices include: an optical device that extracts an optical signal having an arbitrary wavelength from among multiple optical signals whose wavelengths have been multiplexed; and an optical device that uses an optical crystal for matching phases of optical signals, and many optical collimators are used therein which each convert a widening optical signal emitted from an optical fiber into parallel light.
With a conventional optical collimator production method, as shown in FIG. 14, a capillary tube 3 with an optical fiber 2 is first fixed to a thin tube 1, helium-neon laser light L generated by a visible range light source is caused to be emitted from the optical fiber 2, a lens 5 held on a precision stage 4 is aligned so as to have an optically appropriate positional relation while the collimated state of the laser light L is observed using a projection stage 6, and then the lens 5 is fastened to the thin tube 1 using an epoxy-based adhesive 7.
With the conventional assembling method described above, at the time of assembling, the laser light L is actually caused to be emitted from the optical fiber 2, so that it is required to connect the light source and the optical fiber 2 with high precision at a several μm level. The requirement leads to a problem in that preparation for production of the optical collimator, such as work concerning the alignment and processing of the optical fiber 2, takes much time and labor and workability is extremely low.
Also, with the conventional assembling method, the actual holding margin of the lens 5 is less than several mm and the alignment of the optical position requires high precision at several μm or several tenths of μm level, so that there is a problem in that the workability is further lowered.
Further, at the time of the optical position alignment, a gap exists between the lens 5 and the thin tube 1, so that there occurs a problem in that when the adhesive 7 is cured for the fastening after the positioning, the positions of the lens 5 and the like tend to be displaced due to volumetric shrinkage of the adhesive 7.

Optical collimator-use lens component, optical collimator, and method of assembling these


A heavy duty bead remover for vehicle passenger and heavy duty tires wherein the bead is hooked at a circumferential point and drawn through a narrow transversely slotted aperture, thereby to tear the bead from the tire and pull it through the aperture. Adjustable pressure jaws are provided to clamp the bead to the hook, and further a curved guide adjacent the slotted aperture is provided to reduce draw and tear forces. The tire is preferably specially cut prior to tear removal of the bead.

It is well known that environmental as well as sound conservation necessities dictate the salvage and reprocessing of rubber vehicular tires into scrap for diverse useful purposes as rubber reclamation, fillers, and the like, thereby avoiding unsightly, burdensome and hazardous waste piles of worn tires. Such is primarily effected by chopping and comminution of the rubber tires into smaller pieces and particles. Vehicle tires of all types commonly include steel banding or woven wires of significant cross-sectional diameter in the rim beads which conventionally must be cut or chopped along with the rubber in the comminution and reclamation process. The same is true of any steel belting in the tire sidewalls and tread, but wherein such steel tread or sidewall plies are substantially thinner and web-like as contrasted to the cable-like steel rim beads.
The steel ply sidewall and tread scrap can be generally readily cut by heavy-duty comminuting equipment in chopping the tire, and such steel scrap can be readily separated from the shredded rubber by magnetic or other separation techniques, as is well known in the art.
While passenger vehicle tire beads wires are not of excessively large diameter and can be chopped in the reclaiming process, nonetheless the same contribute to quick wear and dulling of the cutters. The bead cutting problem, however, is far more pronounced with heavy duty and more massive tires, as are used on large trucks, earthmovers, and many other vehicles in heavy load service.
In such tires, the steel wire reinforcement in the annular beads on the outside and inside of the tires is of such size, hardness, and cable-like grouping that the cutting elements of the tire chopping and shredding equipment are quickly and severely damaged in processing such heavy duty tires, with resultant more frequent downtime and expense of equipment for cutter replacement or refurbishment.
This problem has been recognized in the art as shown by Burch U.S. Pat. No. 4,873,759 or Uemura U.S. Pat. No. 3,838,492, for example. In these patents, prior to comminution of the large tires, the steel beads are physically pulled from the tire by a mandrel or rod through a relatively large extruding aperture, the ripped beads thereafter being separately processed by suitable equipment. Accordingly, the tires, after being freed from the damage-causing beads may be comminuted or otherwise processed, and the beads separately processed to reclaim the metal.
It has been found, however, that despite bead puller or ripper equipment of the type illustrated by the Burch and Uemura patents, that the beads cannot be reasonably cleanly torn from the tires, whether passenger or heavy duty, but may jam and/or overload the pulling and tearing equipment. Further, in removing the metal beads, it is desired that only a minimum of rubber or other carcass material be pulled from the tire along with the bead, but with present designs in order to have an aperture of sufficient size for a bead-pulling rod, excess rubber is also pulled through the aperture, and indeed even an overly substantial portion of the carcass, thereby obviating the desired result of removing the bead from the tire with minimum carcass.


A semiconductor device includes a semiconductor body of a first semiconductive material. A transistor is disposed in the semiconductor body. The transistor includes source and drain regions of a second semiconductive material embedded in the semiconductor body. A resistor overlies a top surface of the semiconductor body and is laterally spaced from the transistor. The resistor is formed from the second semiconductive material.

Semiconductor devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment, as examples. Semiconductor devices are typically fabricated by sequentially depositing insulating or dielectric layers, conductive layers, and semiconductive layers of material over a semiconductor substrate, and patterning the various layers using lithography to form circuit components and elements thereon.
Resistors are elements that are used in semiconductor devices in many applications. A resistor is a two-terminal electronic component designed to oppose an electric current by producing a voltage drop between the two terminals of the resistor in proportion to the current. The resistance (R) of a resistor is equal to the voltage drop (V) across the resistor divided by the current (I) through the resistor, in accordance with Ohm's law (V=IR, or R=V/I). Resistors are used as part of electronic circuits and may be formed in integrated circuits and semiconductor devices. Resistors are used in applications such as electronic filters, analog-to-digital converters, memory devices, control applications, and many other types of semiconductor device applications. Rather large resistors with high resistance values are often required in radio frequency (RF), analog, and mixed signal devices, as examples.
Transistors are elements that are also used frequently in semiconductor device applications. In the past, gate dielectric materials of transistors in semiconductor devices typically comprised silicon dioxide, which has a dielectric constant or k value of about 3.9. Gate materials of transistors in the past typically comprised polysilicon. However, in some smaller and more advanced semiconductor technologies, such as in a 32 nm technology node, as an example, the use of gate dielectric materials comprising silicon oxynitride and other high k dielectric materials such as hafnium-based dielectric materials having a dielectric constant (k) of greater than about 3.9 have begun to be a trend. Gate materials that include metal layers have also begun to be used for transistors in semiconductor devices.
In some transistor applications, it is desirable to manufacture resistors from the same material layers that transistor gates elsewhere on the chip are manufactured from. However, for some transistors that have a high k gate dielectric material and that include a metal layer in the gate stack, for example, the resistance of resistors manufactured from the same gate stack as the transistors is too low for some applications, due to the presence of the metal layer, particularly in RF applications. For example, in some RF designs, high-precision high and medium ohmic resistors are required. In some technology nodes, such as 32 nm as an example, a P+ doped polysilicon resistor may have a resistance that is dominated by the low resistance of the underlying metal layer, resulting in a sheet resistance of about 150 Ohms/square, which is too low for the requirements of some RF designs.
Removing the metal layer in the resistor region results in a higher resistance value for a resistor, but requires an additional masking level and lithography process, which adds to the complexity and expense of the fabrication process.
Thus, what are needed in the art are improved methods of fabricating resistors in semiconductor devices and structures thereof.

Methods of manufacturing resistors and structures thereof


A fixation system for fixing wind turbine elements of a wind turbine to a vehicle is provided. The fixation system includes a first fixation device for fixing a first portion of a wind turbine element pivotably around a first axis of the first fixation device and around a second axis of the first fixation device to the vehicle. A second fixation device fixes a second portion of the wind turbine element pivotably around a first axis of the second fixation device and around a second axis of the second fixation device. One of the first fixation device and of the second fixation device is adapted for providing a translation movement of the wind turbine element with respect to the vehicle along a third axis. The first axis, the second axis and the third axis are different.

The world's energy consumption is covered more and more with regenerative energy sources such as wind energy. Therefore, the parts of wind turbines have to be transported from the place of manufacture to operating regions with an adequate wind force for producing effectively energy from wind power.
In order to increase the efficiency of the wind turbines, the rotor blades are designed large and larger in order to provide a large area exposed to the wind. Due to these large sized rotor blades of the wind turbines the transportation of such rotor blades may be complicated with conventional transportation means.
US 2007/0189895 A1 discloses a method and a system for transporting wind turbine components. The mounting system includes a plurality of adjacent railcars including a first railcar that includes spaced first and second wheel assemblies, each including at least one wheel pair. The mounting system furthermore includes a first frame and a second frame coupled to the first railcar. The first frame and the second frame are spaced to partially supporting the load.

System for transportation of blades on railcars


A gate with dual gate dielectric layer and fabrication method thereof. A semiconductor substrate is provided, on which a dielectric layer and a patterned hard mask layer with an opening are sequentially formed. A spacer is formed on a sidewall of the opening. The semiconductor substrate is ion implanted, the spacer and the exposed dielectric layer are removed, and a gate oxide layer is formed on the bottom of the opening.

1. Field of the Invention
The invention relates to a method for fabricating a gate dielectric layer, and more particularly a dual gate dielectric layer.
2. Description of the Related Art
A gate dielectric layer, such as silicon oxide layer, is a dielectric formed under a gate of a MOS. MOS evokes electric charge in a channel through the gate dielectric layer, improving the quality of the gate dielectric layer.
FIGS. 1a to 1e are cross-sections of a conventional method for fabricating a gate with a gate dielectric layer;
In FIG. 1a, a semiconductor substrate 101, such as silicon substrate, is provided. A dielectric layer 102, such as pad oxide layer, a hard mask layer 103, such as LPCVD nitride layer, and a patterned photoresist layer 104 with an opening 105 are sequentially formed on the surface of the semiconductor substrate 101, wherein the position of the opening 105 is the position a gate formed in the subsequent process.
In FIG. 1b, the hard mask layer 103 is etched to form an opening 106 using the patterned photoresist layer 104 as a mask, wherein the opening 106 exposes the surface of the semiconductor substrate 101.
In FIG. 1c, the semiconductor substrate 101 is thermally oxidized to form a gate dielectric layer 107, such as gate oxide layer, on the bottom surface of the opening 106.
In FIG. 1d, a conducting layer 108, such as polysilicon or epi-silicon, is formed on the hard mask layer 103, wherein the opening 106 is filled with the conducting layer 108.
In FIG. 1e, the conducting layer 108 is planarized to expose the surface of the hard mask layer 103. The hard mask layer 103 and the dielectric layer 102 are sequentially removed to leave the conducting layer 108a as a gate. S/D area is formed in the semiconductor substrate 101 in the subsequent process, and a MOS with gate with the gate dielectric layer 107 is complete.
The conventional method will fabricate a MOS with one gate dielectric thickness. The thickness of the gate dielectric layer is less when the size of the element is reduced. In order to reduce the GIDL (gate induced gate leakage) effect and gate to S/D leakage, after gate patterned, the gate is oxidized to gain a thicker dielectric thickness at the gate edge. This traditional gate re-oxidation method is hard to control the mini-bird-beak length into the gate at the gate edge. In this invention, a dual gate dielectric thickness to achieve thin dielectric thickness at gate center and thick dielectric thickness at gate edge is fabricated. The gate length of thick gate dielectric can be precisely controlled with a spacer implant mask, which means the device performance can be précised controlled. Device fabrication with more process window will be achieved with the two independent gate dielectric thickness fabrication at the same time.

Gate with dual gate dielectric layer and method of fabricating the same


A flat panel X-ray detector which includes an X-ray-charge conversion film converting incident X-rays into electric charges, and a pair of electrodes disposed in contact with both surfaces of the X-ray-charge conversion film The X-ray-charge conversion film has a laminate structure including a plurality of metal halide films differing in band gap from one another and laminated along direction of c-axis of hexagonal crystal structure, and halogen atoms contained in the plurality of metal halide films are of the same kind among them.

1. Field of the Invention
This invention relates to a flat panel X-ray detector which is adapted to be used in a medical X-ray diagnostic device.
2. Description of the Related Art
In recent years, there is an increasing trend in the medical field to store the medical data of patients in the form of data base. The reason for this trend is due to the facts that since patients often desire to utilize a plurality of medical facilities for the medical treatment of the same disease, one of the medical facilities which is going to examine such patients may require to know the data that has been already obtained by other medical facilities, in order to enable the medical facilities to perform more appropriate medical treatments on such patients.
There is also a strong demand to store the image data of X-ray photographing in the form of data base, and therefore, it is desired to digitize the images produced by X-ray photography. In the conventional medical X-ray diagnostic device, X-ray images are taken by making use of a silver film. If it is desired to digitize such X-ray images, an operation of reading the images that have been photographed and developed on the film is required by making use of a scanner and the like, thus necessitating a troublesome and time-consuming operation.
Recently, there has been developed an image intensifier TV (II-TV) system which is capable of directly digitizing the X-ray images by making use of a CCD camera of about 1 inch and a large scale vacuum tube provided with a photoelectric film, accelerating electrodes and a fluorescent film. However, this II-TV system is accompanied with a problem that in the case of diagnosing lungs for example, an optical apparatus for achieving the convergence of light for taking a picture of as large an area as 40 cm×40 cm is required, thereby necessitating a large scale apparatus. Further, because of the distortion of image caused due to the deflection of electron beam resulting from the earth's magnetism, or because of the deterioration of resolution resulting from a series of electronic and optical systems such as a fluorescent film, a CCD, etc., the quality of image is caused to deteriorate.
There is also proposed, as a new system for overcoming the problems accompanied with the aforementioned conventional two systems, an X-ray image pickup apparatus using an amorphous silicone thin film transistor (a-Si TFT) (hereinafter referred to as a flat panel X-ray detector) (for example, U.S. Pat. No. 4,689,487).
According to this flat panel X-ray detector, the pixels thereof are all constituted by the a-Si TFT, a photoelectric conversion film and pixel capacitance, and these pixels are arranged in the form of an array where hundreds or thousands of pixels are aligned along vertical and horizontal lines (hereinafter referred to as TFT array).
In this flat panel X-ray detector, a bias voltage from a power source is applied to the photoelectric conversion film, and the a-Si TFT is connected with a signal line and with a scanning line and controlled to turn ON/OFF by means of a scanning line driving circuit. The terminal of the signal line is connected, via a change-over switch, with a signal-detecting amplifier.
When a beam of light is irradiated to the detector, an electric current is permitted to flow through the photoelectric conversion film so as to enable electric charge to be stored in the pixel capacitance. The scanning line is designed to be driven by means of the scanning line driving circuit, so that when all TFTs connected with a single scanning line are turned ON, the electric charge stored as mentioned above is transmitted, via the signal line, to the amplifier side. In every pixel, electric charge is inputted into the amplifier by making use of the change-over switch and then converted sequentially into a signal so as to enable it to be displayed on a CRT, etc. In this case, depending on the magnitude of the light entering into the pixel, the magnitude of electric charge is caused to change, thereby causing the output amplitude of the amplifier to change.
According to this system, X-ray images can be directly turned into digital images by A/D-converting the output signals of the amplifier. Further, since the pixel region thereof is formed of the same structure as that of a thin film transistor liquid crystal display (TFT-LCD) which is commonly employed in a note-type personal computer, a display which is thin and large in picture plane can be easily manufactured.
These conventional systems explained above are all related to a flat panel X-ray detector of indirect conversion system wherein the incident X-ray is converted by means of a fluorescent substance, etc. into visible light, which is then converted into electric charge by means of the photoelectric conversion film of each of the pixels.
Apart from these conventional systems, there is also known a flat panel X-ray detector of direct conversion system wherein the X-ray entering into the pixels is directly converted into electric charge. This flat panel X-ray detector conversion system differs from that of indirect conversion system in the respect that an X-ray is directly converted by means of the photoelectric conversion film into electric charge, which is then stored in the pixel capacitance. Namely, this flat panel X-ray detector of direct conversion system is almost identical in structure with the flat panel X-ray detector of indirect conversion system except that the fluorescent substance is not provided therewith.
This flat panel X-ray detector of direct conversion system is constructed such that a capacitor (Cst) consisting of a laminate structure comprising a capacitor electrode, an insulating layer and an auxiliary electrode, a switching TFT connected with the capacitor, and a protective TFT are disposed on the surface of a glass substrate. Each of these components is covered with a protecting film having a contact hole disposed over the auxiliary electrode. On this protecting film, there are successively superimposed a pixel electrode (which is connected via the contact hole with the auxiliary electrode), an X-ray-charge conversion film, and a common electrode (upper electrode). The pixels constructed as described above are arranged in a form of array.
When X-ray is irradiated to the detector, the X-ray is converted by means of the X-ray-charge conversion film into electric charge which is then accelerated by an electric field applied between the common electrode and the pixel electrode and stored in the capacitor. The switching TFT is driven through the scanning line so as to transfer the electric charge that has been stored in the capacitor to the signal line. The function of the protective TFT is to release electric charge whenever an excessive electric charge happens to be generated.
It is required that the signal charge generated from the X-ray is enabled to immediately reach the pixel electrode and stored in the pixel capacitance. If the signal charge is permitted to remain inside the X-ray-charge conversion film, it would lead to the generation of defective images such as residual images where the previous image patterns are left behind or the deterioration of resolution. Most of these defective images are caused to generate due to the signal charge that has been left remained in the X-ray-charge conversion film and acts to badly affect the traveling of the signal charge that has been newly generated by the X-ray. Further, there is another problem that when the X-ray-charge conversion film is accompanied with a large number of defects, electric current passing through such defects is generated, thereby increasing the dark current.
It is conventionally known to construct the X-ray-charge conversion film by making use of PbI2 which is excellent in properties and is expected to be very useful as a material for forming the X-ray-charge conversion film. As a matter of fact however, since this PbI2 is poor in crystallinity especially when it is formed into a thin film, the employment of this PbI2 is also accompanied with the same problems as mentioned above, i.e. residual images, the deterioration of resolution, the generation in considerable degree of dark current, etc. Therefore, up to date, no one has succeeded to manufacture the X-ray-charge conversion film which is excellent in properties (see R. A. Street et al., SPIE Vol. 3659, P. 36,1999).
It is imperative to improve the quality of the X-ray-charge conversion film in order to overcome the generation of aforementioned defective images. According to the prior art however, since a polycrystalline X-ray-charge conversion film which is not so good in quality is deposited on the surface of the underlying substrate in general, a large number of grain boundaries and traps are caused to exist in the film near the interface between the film and the substrate, thereby making it impossible to avoid the generation of residual images and the deterioration of the resolution of images. Furthermore, since a large magnitude of dark current is generated in the case of such a defective film as mentioned above, it is very difficult to perform the detection of images under a faint X-ray dose.
As explained above, as long as the conventional photosensitive films are to be employed for the manufacture of the flat panel X-ray detector, it has been very difficult to form the X-ray-charge conversion film which is excellent in quality. Therefore, it has been very difficult to overcome the generation of residual images, as the deterioration of the resolution of images, and especially the generation of large dark current.


Provided is a flat panel display which has improved flexibility by using a metal substrate or a conductive substrate, wherein the substrate is protected from external exposure. Also provided is a method of manufacturing the flat panel display. The flat panel display includes a substrate, a first insulator with which one surface of the substrate is covered, a display unit disposed on the other surface of the substrate, and a second insulator with which edges of the substrate are covered to prevent exposure.

1. Field of the Invention
The present invention relates to a flat panel display and a method of manufacturing the same, and more particularly, to a flat panel display which provides improved flexibility by using a metal substrate or a conductive substrate which is protected from exposure to ambient conditions. Also presented is a method of manufacturing the flat panel display.
2. Description of the Related Technology
Typical flat panel displays, such as, organic electroluminescent displays, TFT-LCDs, etc., can be thin and flexible. Hence, much research into flat panel displays has been performed to improve flexibility and thinness.
To be thin and flexible, flat panel displays use a flexible substrate. The flexible substrate is generally made of synthetic resin. Flat panel displays include various elements, such as, an organic film, a thin film transistor, electrodes, or an orientation film. These elements are formed under various process conditions. When the flexible substrate is made of synthetic resin, the process may result in the flexible substrate being deformed or in a thin film formed on the substrate being deformed.
To overcome this problem, a technique of forming a flexible substrate of metal foil instead of synthetic resin is under study.
This metal foil substrate is suitable for top-emission type flat panel displays in which light generated in a display unit is emitted in a direction away from the flexible substrate. In addition, a metal foil substrate is less sensitive to the process conditions than a conventional substrate. For example, the metal foil substrate can relatively freely undergo a high-temperature process for crystallizing amorphous silicon into polycrystalline silicon without suffering damage. U.S. Patent Publication No. 2004/0,087,066 discloses an active matrix (AM) organic electroluminescent display using a metal foil substrate.
Since the metal foil substrate is an electrical conductor, the metal foil substrate should not be exposed to the environment after final assembly of the display device. The surface of the metal foil substrate opposite to where the display unit is formed can be prevented from being exposed by being covered with an insulator. However, in mass production, many display devices are simultaneously manufactured by forming many display units on a single metal substrate and then cutting the metal substrate. Although the metal substrate is covered with an insulator beforehand, the cutting process exposes portions of the metal substrate around the periphery of the display. Because of these exposed portions, static electricity affects the display units, thus degrading the quality and durability of the display devices.

Flat panel display and method of manufacturing the same


A disposable diaper has a central slit formed along the lengthwise direction L so that the absorber can be curved to be convex in the inward direction, and a pair of side slits formed along the lengthwise direction L so that the absorber can be curved to be convex in the outward direction. An average total weight of a water absorbent polymer at the central portion CT and the side edge portion SL, SR is smaller than an average total weight of the water absorbent polymer at the middle portion ML, MR.

In disposable wearing articles such as pant-type diapers, a variety of contrivances are made in order to improve the feeling of a wearer or prevent leakage of bodily waste. For example, there is known a pant-type diaper in which three curve forming portions are formed along a lengthwise direction of an absorber at the absorber for absorbing bodily waste of a wearer (Japanese Patent Application Publication No. 2006-346439, for example).
Specifically, in this pant-type diaper, three slits are formed at the absorber, and peripheral portions of the slits each are curved. The central slit peripheral portion is formed to be convex toward an excretion portion of the wearer. In addition, a lateral slit peripheral portion is formed to be convex at an opposite side of the central slit peripheral portion. Namely, a cross-cross-sectional shape of the absorber along a widthwise direction of the absorber is deformed in a W-letter shape.
Thus, the convex portion of the absorber, which is formed by the central slit peripheral portion, easily comes into intimate contact with a wearer's excretion portion. In addition, bodily waste easily enters a concave portion which is formed by two outside slit peripheral portions to be thereby able to restrain bodily waste from coming into direct contact with the wearer's skin.

Disposable wearing article with central and side curving portions


Provides a four-layer structure screen protective film and a manufacturing process thereof, comprising films arranged in sequence, from bottom up: bottom layer release film, single-sided silica gel segmented composite release film, single-sided silica gel hardened practical film, and top layer protective film; composite release film has break lines arranged along length direction, which segment composite release film into pieces; low-viscosity silica gel layer is fixedly arranged on lower surface, whose lower surface is bonded to upper surface of bottom layer release film; lower surface of single-sided silica gel hardened practical film has silica gel layer fixedly arranged, whose lower surface is bonded to composite release film. Being able to move on screen repeatedly during film-adjusting process, avoiding large area of silica gel exposing after whole face of release film is peeled off, thus avoiding from sucking dusts or cilia in air.

A screen protective film is a most common screen protector on market, while in a plurality of protective films, a PET protective film is widely used, which owns a character of a relatively hard texture, and a relatively good scratch resistance, as well as not showing yellow or being oily, even after a long time usage, which is different to a PVC material. However, usually the PET protective film is pasted and stuck by a silica gel, and a price for the PET protective film is much higher than that of a PVC protective film. A plurality of famous brand cell phones abroad have a PET protective film in package when leaving factory. And the PET protective film owns a finer process and package, while a plurality of manufactures have specially ordered the PET protective films for their popular cell phones, which may be applied directly without any cuttings.
A screen protective film currently on market has two problems causing hard to stick well during a film sticking process: first, it is hard to be aligned accurately at one time, instead, it needs a plurality of adjustments, and during a position adjusting process, a finger is easy to harm a glue surface of the screen protective film. Secondly, after uncovering the release film, a large area of silica gel will be exposed, and that is easy to suck dust or cilium in air. Both points listed above are a main reason causing a failure to stick a film.
All above, during pasting and sticking, a screen protective film in the prior art has a plurality of problems including: hard to be aligned accurately at a time, a plurality of adjustments required, uncovering and aligning repeatedly during an adjustment process, and it is needed to totally peel off all the release film, causing a big area of silica gel exposing, which is easy to suck dust or cilium in air.
Therefore, the existing technology needs to be improved and developed.

Four-layer structure screen protective film and manufacturing process thereof

SHENZHEN HUAXINLONG PAPER PRODUCTS PACKING CO., LTD.


Physical parameters are measured for an array of seismic sources, preferably for each activation of the seismic sources. Calibration functions are obtained and the measured physical parameters and calibration functions are applied to a model, which generates a calibrated source signature for the array of seismic sources. Alternatively, the measured physical parameters are applied to a model, which generates a modeled source signature, and then the calibration functions are applied to the modeled source signature to generate the calibrated source signature. Alternatively, modeled source signatures are generated for each seismic source and then the calibration functions are applied to the modeled source signatures to generate a calibrated source signature for each seismic source. Then the calibrated source signatures for each seismic source are combined, preferably by linear superposition, to generate the calibrated source signature for the array of seismic sources.

1. Field of the Invention
This invention relates generally to the field of geophysical prospecting. More particularly, the invention relates to the field of seismic data acquisition. Specifically, the invention is a method of seismic source monitoring using modeled source signatures with calibration functions.
2. Description of the Related Art
Marine seismic exploration typically employs a submerged seismic source towed by a ship and periodically activated to generate an acoustic wavefield (a "shot"). The wavefield may be generated by a small explosive charge, an electric spark or arc, a vibrator, or, typically, a gun. The gun may be a water gun, vapor gun, or, most typically, an airgun. Each airgun contains a volume of air typically compressed to about 2000 psi (pounds per square inch) or more. An airgun abruptly releases its compressed air to create an air bubble, leading to an expanding sound wave in the water. The resulting wave front propagates downwardly into the earth beneath the water, reflects from subterranean earth layers, and returns upwardly toward the water surface. Seismic receivers, which are typically streamers of hydrophones that are also submerged and towed by the same or another ship, detect the reflected wave fronts, convert the detected wave fronts to electrical signals, and transmit those signals to a ship for storage and processing.
When a seismic source is triggered, it produces a complex output pressure pulse in the water. In an idealized situation in which the seismic source is a point source, such as a single airgun, and there is no sea surface, the emitted wave front is independent of direction and distance, except for spherical spreading. Converted to an electrical signal, the output pulse of an airgun would consist of a short wave train whose envelope displays an initial short, fast, positive rise in amplitude followed by several rapidly-decaying oscillations. The recorded wave train is called the signature of the seismic source.
In practice, a sea surface exists and is typically only meters away from the seismic source. The acoustic wave generated by the seismic source radiates by spherical spreading in all directions such that there is a downwardly traveling component as well as an upwardly traveling component. The water-air interface at the sea surface has a reflection coefficient typically close to a value of −1. The upwardly traveling component of the acoustic wave is reflected by the water surface and is reversed in polarity to become another downgoing component. This additional downgoing component is generally referred to as a "ghost". The ghost interferes with the direct wave to complicate the source signature.
Typically, a seismic source consists not of a single element, but of a spatially-distributed array of elements that generate direct arrivals plus the ghost components. This is particularly true of airguns, currently the most common form of marine seismic source. The spatial dimensions of an array of source elements may be comparable to the wavelengths of the acoustic waves themselves within the useful seismic frequency passband. Thus, there is no single source signature for an array. Rather, the source signature of an array in the near-field becomes a continuous function of both direction and distance. At distances large compared with the array dimensions, the dependence on distance in any particular direction becomes negligible. This region is called the far-field. It is the far-field signature that is useful for seismic data processing. For arrays of airguns, which typically extend over spatial dimensions of about 20 meters by 20 meters, the distance to the far-field is on the order of 250 meters.
Although modem airguns produce stable wavefields in a laboratory situation, the wavefields produced by arrays of airguns deployed at sea are not so stable. In a marine environment, the wavefields of airgun arrays vary from shot to shot because of physical factors such as airgun drop-outs; sea surface conditions affecting the ghost; and variations in the array geometry, airgun depth, pressure, airgun timing, water velocity, or sea temperature. If these source variations could be monitored accurately, the source variation data could be used to significantly enhance the quality of the resultant seismic data. Correcting for source variations may be particularly important in situations such as four-dimensional or time lapse seismic, such as reservoir monitoring. In these situations, very small differences in seismic data sets may otherwise be swamped by the source variations.
Shot to shot variations in marine seismic sources are not often monitored, primarily because it is difficult to do. However, methods of seismic source monitoring are currently in use. A first method, the far-field method, typically employs measurement of the vertically traveling signature with a far-field hydrophone. The far-field method, however, is unreliable because the position of the sensor drifts, only a single point in the wavefield is measured, and it is difficult to position the sensor (hydrophone) the required distance from the source. The far-field method often requires moving the seismic survey vessels and equipment to deeper waters to make the far-field measurements. Thus, the far-field method is difficult and expensive to do.
A second method of seismic source monitoring, the near-field method, employs measurement of near-field signatures, which can be analyzed to calculate the whole wavefield of the array. A primary example of this second method is known to those of ordinary skill in the art as the notional source method. A notional source signature is a normalized, idealized source signature that would be measured by a hydrophone at one meter distance from an airgun, if there were no surface reflection and no relative motion between the airgun bubble and the hydrophone. See, for example, the following two publications. The first publication is Ziolkowski, A., Parkes, G., Hatton, L., and Haugland, T., "The signature of an airgun array: Computation from near-field measurements including interactions", Geophysics, Vol. 47, No. 10 (Oct. 1982), pp. 1413–1421. The second publication is Parkes, G., Ziolkowski, A., Hatton, L., and Haugland, T., "The signature of an airgun array: Computation from near-field measurements including interactions—Practical considerations", Geophysics, Vol. 48, No. 2 (Feb. 1984), pp. 105–111.
The first publication, Ziolkowski et al. (1982), describes a theory of the interactions between bubbles produced by airguns in an array. Assuming that the bubbles are small compared with the wavelengths of seismic interest, the array of interacting oscillating bubbles is equivalent to a "notional" array of non-interacting oscillating bubbles. If there are n airguns in the array, then n independent measurements of the near-field pressure field of the full array may be used to determine the n notional source signatures. The signature of the array at any point in the water may then be calculated by linear superposition of these n notional source signatures. A spherical correction is also applied, in which the notional source signatures are scaled and time delayed relative to each other according to distance and direction. However, the number of near-field measurements must not be less than the number n of airguns in the array.
The second publication, Parkes et al. (1984), refines the solution of Ziolkowski et al. (1982) for the signature of an interacting array of airguns. An iterative technique is applied to calculate notional source signatures from the near-field measurements using hydrophones placed close (one meter) to each airgun. The amplitude variation effects of the forward motion of the hydrophones and the upward motion of the airgun bubbles with respect to each other are handled in a linear velocity model. However, continuous recording of the near-field signatures is required to recompute the wavefield if the radiation of the airgun array changes or becomes unstable.
The notional source method is further discussed in U.S. Pat. Nos. 4,476,550; 4,476,553 and 4,868,794. The first of these patents is U.S. Pat. No. 4,476,550, "Determination of far field signatures, for instance of seismic sources", filed Aug. 25, 1981 and issued Oct. 9, 1984 to Ziolkowski, A. M. and Stoffa, P. L. The second patent, also issued on Oct. 9, 1984, is U.S. Pat. No. 4,476,553, "Method of determining the signatures of arrays of marine seismic sources", issued to Ziolkowski, A., Hatton, L., Parkes, G., and Haugland, T. The third patent, issued to the same inventors as the '553 patent, is U.S. Pat. No. 4,868,794, "Method of accumulation data for use in determining the signatures of arrays of marine seismic sources", issued Sep. 19, 1989.
The first patent, the Ziolkowski et al. '550 patent, discloses a method used with towed marine seismic streamers for ascertaining the far-field signature of an array of airguns, each of which is small compared with the wavelength of the highest frequency of interest. The airguns are fired so that interactions between the airguns are kept negligible, by either separation in time or separation in space. For separation in time, the airguns are fired sequentially so that each airgun generates all its significant radiation before the next airgun is fired. For separation in space, the airguns are fired more than one at a time, but are separated by a distance of at least one wavelength of the lowest frequency of interest. The far-field signature of each unit is measured by a pressure-sensitive detector close to the airgun but in a region where the phase spectrum of the pressure field is independent of azimuth and range. The far-field signature of the array is derived from the measured signatures by summation.
The second and third patents, the Ziolkowski et al. '553 and '794 patents, disclose a method for determining the far-field signature of an array of n airguns. The array is actuated and the emitted pressure wave is measured by n hydrophones at n independent points whose positions with respect to the array are known. The n measurements are processed to form n simultaneous equations, which are then solved to produce n notional signatures of the n sources. Solving the simultaneous equations takes into account the interactions between the airguns. The signature of the entire array is then determined by superposing the n notional signatures.
The notional source method, however, has some intrinsic practical difficulties. As described in the Ziolkowski et al. (1982) publication, the number of seismic sources (airguns) must equal the number of independent measurements (hydrophones), to provide n well- determined simultaneous equations to solve. Thus, all n airguns and all n hydrophones must function at all times. In addition, the notional source method assumes that the water-air interface at the sea surface is a good planar reflector with a reflection coefficient close to −1. Otherwise, as described in the Ziolkowski et al. '553 and '794 patents, the number of unknown variables doubles to 2n, which means that the number of hydrophones must double to 2n.
Furthermore, the notional source method typically uses hydrophones approximately one meter from each airgun, as described in the Parkes et al. (1984) publication. A hydrophone placed near the airgun array records the primary source signature from the airgun plus a much smaller ghost reflection from the sea surface. Additionally, each hydrophone records contributions from all the surrounding airguns. Both the ghost reflections and the relative motion between the hydrophones and the bubbles created by the hydrophones must be accounted for in the notional source method. Thus, the notional source method requires precise measurements of the separation between airguns and hydrophones as well as precise measurements of the spacing between airguns in the array.
Thus, a need exists for a method for determining an accurate far-field seismic source signature for an array of seismic sources.

Method of seismic source monitoring using modeled source signatures with calibration functions


Separators, materials, and processes for producing electrochemical cells, for example, lithium (Li) metal batteries, and electrochemical cells produced therefrom. Such a separator includes a permeable membrane formed of a first polymer that is hydrophobic and has oppositely-disposed first and second surfaces, a second polymer that is hydrophilic and is incorporated into the first surface of the first polymer so that the first surface of the first polymer is a hydrophilic surface, and a conductive composite layer on the hydrophilic surface. The composite layer contains at least one layer of a carbonaceous material and an aqueous binder that binds the carbonaceous material together and to the hydrophilic.

The present application generally relates to storage devices, as nonlimiting examples batteries for use in electronic and electric vehicle applications. The invention particularly relates to components, materials, and processes capable of enhancing the life and capacity of electrochemical cells, especially lithium (Li) metal batteries, and electrochemical cells produced therefrom.
This section introduces aspects that may help facilitate a better understanding of the disclosure. Accordingly, these statements are to be read in this light and are not to be understood as admissions about what is or is not prior art.
With the advent of high-performing electronic applications (e.g., portable devices, electric vehicle, etc.), substantial efforts have been devoted to developing high energy density and long cycle life energy storage devices. Previous anode research with focus on carbonaceous materials (e.g., graphite, hard carbon, etc.) have shown promising results and consequently carbonaceous materials have been adopted in the industrial battery market. However, these anode electrodes have intrinsic limitations in achieving a higher energy density at an affordable cost. To address such challenges, Li metal batteries have received a great deal of attention from diverse fields and institutes. This is because of lithium metal's high theoretical capacity (3860 mAh g−1), low negative redox potential (−3.04 versus the standard hydrogen electrode), low density (0.59 g cc−1), and possible utilization in high energy storage devices (as nonlimiting examples, Li—S and Li—O2 batteries).
However, the practical use of Li metal electrode in the industrial battery market has been impeded by certain challenges, particularly those associated with low Coulombic efficiency and safety risks resulting from short circuiting caused by dendritic Li growth. To address these issues and the practical utilization of Li metal electrodes in advanced energy storage systems, a variety of strategies have been approached to enhance the electrochemical performance of Li metal batteries and reduce the risk of short-circuiting, including exploring new electrolyte additives, adopting protective layer to Li metal surfaces, and designing functional membranes. Among these strategies is the surface alteration of separators utilized in Li metal batteries. As known in the art, separators are permeable membranes that physically separate the anode and cathode of a battery to prevent electrical short circuits while permitting the transport of ionic charge carriers therebetween. Surface alterations of standard polypropylene (PP) separators with multifunctional materials have been shown to improve the cycle performance and Coulombic efficiency of Li metal batteries, making it an ideal approach to address the systemic issues underlying the use of Li metal anodes.
Optimization of battery electrolytes with new additives requires complicated and expensive procedures. In addition, there are some problematic issues with electrolyte decomposition, causing capacity fading. Adopting a protective layer to Li metal using deposition techniques (sputtering and atomic layer deposition) also requires elaborate and expensive procedures and are not scalable. Hence, these critical challenges inhibit the practical use of Li metal in commercial batteries.

Separators for electrochemical cells and methods of making the same


A light emitting device according to the embodiment includes touch window including: a substrate; and an electrode part on the substrate, wherein the electrode part includes: a first sub-pattern; an electrode layer on the first sub-pattern; and a second sub-pattern close to the first sub-pattern, and wherein a boundary area between the electrode layer and the first sub-pattern is larger than a boundary area between the substrate and the first sub-pattern. A light emitting device package according to the embodiment includes a touch window including: a substrate; and an electrode part on the substrate; wherein the electrode part includes: a first sub-pattern; an electrode layer on the first sub-pattern; and a second sub-pattern close to the first sub-pattern, and wherein a line width of the first sub-pattern is changed according to a height of the first sub-pattern.

The disclosure relates to a touch window.
Recently, a touch panel, which performs an input function through the touch of an image displayed on a display device by an input device such as a stylus pen or a hand, has been applied to various electronic appliances.
The touch panel may be representatively classified into a resistive touch panel and a capacitive touch panel. In the resistive touch panel, the position of the touch point is detected by detecting the variation of resistance according to the connection between electrode parts when pressure is applied to an input device. In the capacitive touch panel, the position of the touch point is detected by detecting the variation in capacitance when a finger of the user is touched on the capacitive touch panel between electrode parts. When taking of the convenience of a fabrication scheme and a sensing power, recently, the capacitive touch panel has been spotlighted in a smaller model.
Indium tin oxide (ITO), which has been most extensively used as an electrode part of the touch panel, is highly priced, and requires a high-temperature deposition process and a vacuum process for the purpose of forming an electrode part. In addition, the ITO is physically easily struck due to the bending or the curving of a substrate, so that the characteristic of the ITO for the electrode part is deteriorated. Accordingly, the ITO is not suitable for a flexible device. Further, when the ITO is applied to a touch panel having a large size, a problem occurs due to high resistance.
In order to solve the problem, researches and studies on an alternative electrode part have been actively carried out. The substitute for ITO is formed by making the shape of the mesh using metallic materials. When the mesh is formed using a nano pattern and a micro-pattern, collision or scratch may occur between a mold and the micro-pattern during a demolding process after a mold-imprinting process. Accordingly, the micro-pattern is damaged, causing bad influence upon an electrode material formed on a micro-pattern.
Further, upon formation of the mesh, undercut by an etching solution occurs between the micro-pattern and the electrode material. Accordingly, the adhesive strength between the micro-pattern and the electrode material is reduced. Therefore, the electrode material may be delaminated during a process of manufacturing a touch panel because the electrode material becomes weak against external impact or chemicals.


A dispersion compensation fiber comprises a fiber core and cladding. The fiber core is a core layer mainly doped with germanium and having a positive relative refractive index difference. The cladding covering the fiber core comprises a trench cladding mainly doped with fluorine, an annular cladding mainly doped with germanium, a matching cladding mainly doped with fluorine, and an outermost mechanical cladding in order. Relative refractive index differences of the fiber core and the claddings are respectively: Δ1% being 1.55% to 2.20%, Δ2% being −0.55% to −0.30%, Δ3% being 0.40% to 0.65%, Δ4% being −0.20% to −0.01%, and Δ5% being 0. Radius ranges, from R1 to R5, of the fiber core and the claddings are respectively: R1 being 1.4 to 1.7 μm, R2 being 4.1 to 4.8 μm, R3 being 6.7 to 8.8 μm, R4 being 10 to 17 μm, and R5 being 38 to 63 μm.

With the popularization of a dense wavelength division multiplexing (DWDM) system of a standard single mode fiber, and the development trend towards high speed, long distance, non-relay and dense channels, the wavelength division multiplexing technology is developed rapidly; and the working wavelength band is rapidly expanded, and the wavelength is diversified rapidly.
At the wavelength of 1310 nm, a long-haul fiber constructed based on G.652 fibers has minimum dispersion, but has significant attenuation, while at the waveband of 1550 nm, the long-haul fiber has lowest attenuation (about 0.20 dB/km). Therefore, people are eager to utilize the wavelength window of 1550 nm. The successful development and practice of an erbium-doped optical fiber amplifier (EDFA) working at the waveband of 1550 nm further eliminate the limitation of the attenuation on a communications system, which makes the waveband of 1550 nm a preferential window for a large-capacity and long-distance optical wave system. At the waveband of 1550 nm, a commercial single mode fiber and a DCF thereof at present have the following dispersion features: a dispersion coefficient of a non-dispersion shifted single mode fiber (G.652C/D, ITU-T standard) is about 17 ps/nm-km, and a dispersion slope thereof is about 0.058 ps/nm2-km; therefore, a relative dispersion slope (RDS) required by the non-dispersion shifted single mode fiber is about 0.0036 nm−1.
In order to solve the upgrade and capacity expansion problems of a communications network formed of 1310 nm zero-dispersion standard single mode fibers at the waveband of 1550 nm, dispersion compensation technologies are widely used all over the world to solve the link dispersion. At present, a dispersion compensation fiber (DCF) technology is largely commercialized to compensate the dispersion and dispersion slope of a communication link fiber at the same time. Compared with other dispersion compensation technologies such as fiber grating dispersion compensation and electronic dispersion compensation, this technology is more reliable and more mature.
The DCF changes transmission parameters of an optic signal in the fiber by adjusting a waveguide structure of the fiber, so that the core of the fiber has a great refractive index, thereby achieving great negative dispersion value and dispersion slope.
In practical applications, the DCF is made into a dispersion compensation module and connected into the communication link. At this time, the splice loss between the DCF and the standard communication fiber becomes an important impact factor of insertion loss. Therefore, the splice performance of the DCF is a key parameter. A DCF with applicability not only needs to have appropriate optical performance and transmission performance, but also needs to have excellent splice performance, which means a low splice loss and an efficient and stable splice process. The splice performance becomes an important factor that influences the DCF cost and performance. A lower splice loss guarantees better performance of the module, and a faster and more efficient splice procedure reduces the splice cost.
In published patent documents, some product and method examples for improving the DCF splice performance are provided. For a 1550 nm light source, a mode field diameter of the DCF is about 5 μm, while a mode field diameter of a standard communication fiber is 10.5 μm. As a result of such difference in the mode field (mode field mismatching), leakage easily occurs when optical power is introduced from a large mode field to a small mode field. The prior art relates to employing a complex splice process to disperse the DCF fiber core near the end face interface of the splice fiber, so as to distribute the DCF mode field nearby into a conical transition area; a "chimney effect" of the area helps reduce the optical power loss caused by mode field mismatching, thereby reducing the splice loss.
The prior art also relates to a method of using a "bridge fiber" as a bridge to connect the DCF and standard single mode fiber. The bridge fiber is a kind of special fiber with a structure similar to the DCF, while a doping concentration of each layer is lower than that of the DCF. Two ends of the bridge fiber are respectively spliced with the DCF and the standard single mode fiber by using different splice processes. The end of the bridge fiber, which is connected with the DCF, uses low splice power and short splice time so as to reduce core area element dispersion and mode field mismatching; the other end of the bridge fiber, which is connected with the single mode fiber, uses high splice power and long splice time so that the fiber core of the bridge fiber is dispersed, thereby achieving mode field matching.
The U.S. Pat. No. 6,603,914 introduces a composition structure and a manufacturing method of a DCF, but does not relate to the splice method and the optical transmission performance of the DCF. The U.S. Pat. No. 6,543,942 describes a method for connecting a DCF and a standard single mode fiber by using a bridge fiber, which reduces the splice loss, but the patent does not correspondingly disclose the optical transmission performance of the DCF; in addition, the method involves a complex process, takes a long time, has low splice efficiency, and thus is not practical. No Chinese patent relating to the splice method for a DCF is available.
The documents described above relate to various methods for improving the splice performance of the DCF and standard single mode fiber as well as corresponding DCF products, but no method capable of improving the splice performance while having excellent optical transmission performance and a spice method thereof have been reported.
Therefore, a heretofore unaddressed need exists in the art to address the aforementioned deficiencies and inadequacies.

YANGTZE OPTICAL FIBRE AND CABLE JOINT STOCK LIMITED COMPANY


The invention is a low calorie sugar substitute suitable for use as a sugar replacement, including use in activities such as baking and cooking. It is a combination of an intense sweetener and a bulking agent. The intense sweetener is acesulfame potassium. The bulking agent is either erythritol or a mixture of gluco-mannitol and gluco-sorbitol. Preferably the ratio of intense sweetener to the bulking agent is in the range of 0.20 to 0.35 percent by weight.

1. Field of the Invention
The invention relates to a low calorie sweetener, diabetically safe substitute suitable for use as a sugar replacement, including use in activities such as baking, cooking and general sweetening of foods and beverages.
2. Description of Related Art
Sugar refers to a family of simple carbohydrates found naturally in fruits, vegetables, grains and dairy products. It is also added to foods as a sweetener or preservative. Added sugars and naturally occurring sugars are chemically identical. Common table sugar has been used for centuries for adding to foods to sweeten them. Common table sugar is a disaccharide called sucrose. A disaccharide is a sugar which, upon hydrolysis, yields two monosaccharide molecules. Sucrose consists of the sugars glucose and fructose. Glucose and fructose are monomeric sugars. Each has the chemical formula C(6)H(12)O(6). However, the molecules are arranged in slightly different ways. Glucose has a six-membered ring and fructose has a five-membered ring. Sucrose consists of one molecule of glucose and one molecule of fructose joined together in a glycosidic linkage. The linkage is formed with the loss of one O and 2H, or more accurately, with the loss of a water molecule, H2O.
The use of low calorie sweeteners, such as intense or potent sweeteners, as a replacement for table sugar in a variety of food products is common in food and beverage formulations. For many consumers, however, products marketed as diet or light versions of products that are artificially sweetened are not preferred. Furthermore, the sugar substitutes that are currently on the market have unsatisfactory, look, feel and taste characteristics. Attempts have been made over the years to improve the taste delivery of these diet or light products and sugar substitutes. Besides sweetness, other health related and sensory characteristics of a food or beverage product, including the healthiness for a human being, effect on diabetics, flavor, mouthfeel and aftertaste of the product, affect the desirability of an artificial sweetener. Efforts have been made to add specific bulking agents to intense sweeteners in an attempt to improve the health benefits and the sensory delivery of sugar substitutes and to provide the same physical and aesthetic characteristics as sugar.
One of the sensory limitations of current sugar substitutes often expressed by consumers is the lack of proper look, density and mouthfeel that they deliver relative to their equivalents. The full calorie products are perceived as having a full taste and smooth mouthfeel. Diet products are often described as tasting artificial and having an unpleasant aftertaste.
Low-calorie potent sweeteners generally permit the development of diet or light products through an ability to elicit sufficient sweetness at a very low concentration of the sweetener, but they are generally unable to mimic other sensory characteristics of sucrose, particularly density, taste, mouthfeel and body. For example, the granularity of current sugar substitutes are completely different from common table sugar. In addition, artificial sweeteners to date have not been able to deliver the full, rounded, sweetness typical of sucrose. Accordingly, there is a continuing need to identify a low-calorie sweetener that provides both the sweetness characteristics of sucrose and other important sensory characteristics such as mouthfeel, flavor, aftertaste and visual characteristics.


A memory element having a storage layer containing an ion source layer between a first electrode and a second electrode is provided. The memory element stores information by changing an electrical characteristic of the storage layer, wherein at least Zr is added to the ion source layer as a metal element together with an ion conducting material.

High-speed and high-density DRAM (Dynamic Random Access Memory) has found wide application as RAM (Random Access Memory) in information equipment such as computer. However, DRAM involves high manufacturing cost for its complicated manufacturing process as compared to typical logic circuit LSI (Large Scale Integration) and signal processing used for electronic equipment. Further, DRAM is a volatile memory in which information is lost when power is removed. Therefore, it requires frequent refresh, which means that the written information (data) must be read, amplified again and rewritten.
For this reason, flash memory, FeRAM (Ferroelectric Random Access Memory) and MRAM (Magnetoresistive Random Access Memory) have been proposed, for example, as non-volatile memories which can retain information even when power is removed. These types of memories can retain the written data for extended periods even without any supply of power.
However, the aforementioned types of memories have their advantages and disadvantages. Flash memory is high in integration degree but disadvantageous in terms of operating speed. FeRAM has its limit in patterning required for high integration. This memory also has problems with its manufacturing process. MRAM has a power consumption problem.
Therefore, a new type of memory element is proposed which is particularly advantageous in overcoming the patterning limit of the memory element. This memory element has an ion conductor containing given metals sandwiched between two electrodes. In this memory element, one of the two electrodes contains the same metals as contained in the ion conductor. As a result, when a voltage is applied between the two electrodes, the metals diffuse into the ion conductor as ions. This changes the electrical characteristic, such as resistance value or capacitance, of the ion conductor. For example, JP-T-2002-536840 and Issue of Nikkei Electronics No. 20 (page 104), January, 2003, describe memory devices using this property. JP-T-2002-536840 in particular proposes an ion conductor which includes a solid solution made of chalcogenide and metal. More specifically, the ion conductor includes a material in which Ag, Cu and Zn are dissolved in AsS, GeS or GeSe. One of the two electrodes contains Ag, Cu and Zn.
However, if the ion conductor of the memory element configured as described above is left standing for extended periods in a low-resistance value stored state (e.g., "1") or in a high-resistance value erased state (e.g., "0"), or alternatively if the ion conductor is left standing at an atmospheric temperature higher than room temperature, the resistance value thereof will change, causing the memory element to lose the stored information. Thus, a memory element is unfit for use as a non-volatile memory if it has only low data retention capability.
Further, if, in recording a large amount of information per same area, it is possible to provide an intermediate arbitrary resistance value between, for example, a high resistance state of several hundreds of MΩ and a low resistance state of several kΩ, rather than simply high resistance state of "0" and low resistance state of "1", then the memory will have a wider operating margin and can record multivalued information. That is, if one memory element can store four resistance states, two bits of information can be stored in each element. If one memory element can store 8 resistance values, three bits of information can be stored in each element. As a result, the memory capacity can be improved two-, three- or more fold.
With known memory elements, however, if the range of variable resistance value is, for example, from several kΩ to several hundreds of MΩ, the resistance values which can be held in low and high resistance states are about 10 kΩ or less and 1 MΩ or more, respectively. Therefore, it is difficult to retain an intermediate resistance value between high and low resistance states, thus making it difficult to store multivalued information.


A low-voltage optical modulator includes a substrate, a waveguide, a first pair of electrodes, and a second pair of electrodes. The waveguide is diffused into the top surface of the substrate, into a major branch and a parallel modulating branch. A structure of the first and second pair of electrodes are same. The first pair of electrodes includes a first and a second electrode parallel to each other. The first electrode is formed on the modulating branch and the second electrode is opposite to the modulating branch and away from the major branch. The second pair of electrodes includes parallel third and fourth electrodes. The third electrode is formed on the major branch. The fourth electrode is opposite to the major branch and away from the modulating branch.

1. Technical Field
The present disclosure relates to integrated optics, and particularly to an electro-optic modulator.
2. Description of Related Art
Electro-optic modulators, such as Mach-Zehner electro-optic modulators, change a refractive index of a branch of a Y-shaped waveguide (hereinafter, the first branch) using a modulating electric field, utilizing an electro-optic effect. Thus, the modulators can alter a phase of lightwaves traversing the first branch. As a result, the lightwaves traversing the first branch can be phase shifted, and thus interfere with lightwaves traversing another branch of the Y-shaped waveguide (hereinafter the second branch). An output of the Y-shaped waveguide is modulated as the output depends on the phase shift, which in turn depends on the modulating electric field. Since only one of the branches is modulated, a required modulating voltage is relatively large, and with low modulating efficiency.
Therefore, it is desirable to provide an electro-optic modulator that can overcome the above-mentioned problems.

Electro-optical modulator and method for making thereof


Image data are transmitted for each unit of predetermined rasters. A start timing of transmission is controlled by a control unit to provide a suitable vertical position on a screen.

The present invention relates to an image processing system, and more particularly to a game computer system processing both moving and still pictures.
In a conventional image processing system, image data stored in an external storage such as a CD-ROM, are read to be displayed on a video screen by a video encoder unit. According to this system, a memory is necessary to have a capacity for storing at least one screen data to control the video screen vertically.
In a conventional game computer, background (BG) and sprite pictures are combined on a screen to display one image. The background and sprite images are composed of plural elements, which are called characters and sprites, respectively. The background image is defined on the screen by its position, color and pattern for each character. The position of each character is defined by its coordinate. The game computer is provided with a memory, from which a virtual screen is derived so that the virtual screen is taken to have an area larger than the real screen (CRT). The real screen is scrolled by shifting a picture on the virtual screen.
The computer has a video-RAM (VRAM), which includes a background attribute table (BAT) and a character generator (CG), as shown in FIG. 1. In accordance with data in the background attribute table (BAT) and character generator (CG), the background image is managed.
In such a game computer system, plural pictures arranged at different angles are displayed successively in a predetermined order whereby the BG screen seems rotating. In some cases, such plural pictures are formed arithmetically in accordance with a matrix coordinate, as shown in FIG. 2.
In the conventional game computer system, a VRAM stores image data at once, and then a video controller VDC reads and processes the image data. The VDC supplies the processed image data to a video encoder unit VDE, so that a CRT displays the image data, as shown in FIGS. 3 and 4. Basically, the image data are processed for each screen, and therefore, the VRAM must store at least image data for one screen prior to the processing.
In the case of a moving picture, it is not necessary to store the entirety of the image data in a VRAM, as shown in FIG. 5A, because a moving picture is composed of different images for each field. That is, image data are transmitted not through the VRAM to the video encoder unit VDE, as shown in FIG. 5B. Therefore, image data for a moving picture must be stored in an external storage before the display thereof. This system may not perform special processing, such as rotation, reduction and extension. If image data for a moving picture are stored in the VRAM at once, the transmission of the image data is delayed by one field. Eventually, when a computer system deals both with moving and still pictures, one of the two may not be displayed well.
Generally, a game computer is required to deal with a large amount of data to display a video image. For instance, when a game computer employs a color display monitor of 512.times.512 dots, in which each luminance of RGB is defined by eight bits, each color image needs a memory capacity of about 768 k bytes (512.times.512.times.3). In a game computer, predetermined data must be processed while tens of images are displayed in one second, and therefore, image processing must be performed in a horizontal (HSYNC) period. For that reason, according to the conventional game computer, it is difficult to realize special graphic processing such as rotation, magnification, reduction and the like.

Image processing system including a processor side memory and a display side memory


Dense sintered bodies are provided which. a) comprise from 45 to 99.5 wt % of SiC, the SiC being present in the sintered body as a crystalline first phase, and PA1 b) comprise from 0.5 to 55 wt % of a sintering aid, from 0.5 to 30 wt % of which is selected from the group consisting of reaction products of Al.sub.2 O.sub.3 with Y.sub.2 O.sub.3, mixtures of at least one nitrogen-containing aluminum compound with reaction products of Al.sub.2 O.sub.3 with Y.sub.2 O.sub.3, mixtures of at least one rare earth oxide with at least one nitrogen-containing aluminum compound and/or Al.sub.2 O.sub.3, and from 0 to 25 wt % of which is selected from the group of the nitridic silicon compounds, the sintering aid being present in the sintered body as a second phase and optionally further phases, wherein the second phase and optionally the further phases are either amorphous to an extent of more than 10% or are present in amorphous form at the interface to the first phase to a width of at least .gtoreq.5 .ANG., and the polished surface of the sintered body does not contain any pores having a diameter >1 .mu.m.

1) Field of the Invention
The invention relates to pore-free sintered bodies on the basis of silicon carbide which are suitable as substrates for hard disks in magnetic disk drives, and to methods for the fabrication thereof.
2) Background Art
Materials suitable as substrates for hard disks must be amenable to extremely high-quality polishing, with a high flatness and low porosity (IDEMA specifications) and a roughness "Ra" below 100 .ANG., preferably below 10 .ANG.. They must be very stiff so that, in the usual form of thin disks (for example 65.O slashed..times.20.O slashed..times.0.635 mm), they will not distort when mounted in the drive or under their own weight or when being heated to about 300-600.degree. C. while the magnetic layers are being sputtered on or when they rotate in the drive at e.g. 7500 rpm. Otherwise, a uniform distance of the read-write head would not be ensured and reading and writing of data in the magnetic layer would give rise to errors. Moreover there would be the risk of the disk colliding with the head and possibly being destroyed.
Furthermore, the substrate material is required to be very hard so that an occasional collision with the read-write head will not result in deformations in the substrate and loss of data.
As a material, SiC is distinctly superior, in all these points, to the substrates already being used:
a) aluminum with Ni/P coating PA1 b) glass or glass ceramics. PA1 a) from 45 to 99.5 wt % of SiC, the SiC being present in the sintered body as a crystalline first phase, and PA1 b) from 0.5 to 55 wt % of a sintering aid, from 0.5 to 30 wt % of which is selected from the group consisting of reaction products of Al.sub.2 O.sub.3 with Y.sub.2 O.sub.3, mixtures of at least one nitrogen-containing aluminum compound with reaction products of Al.sub.2 O.sub.3 with Y.sub.2 O.sub.3, mixtures of at least one rare earth oxide with at least one nitrogen-containing aluminum compound and/or Al.sub.2 O.sub.3, and from 0 to 25 wt % of which is selected from the group of the nitridic silicon compounds, the sintering aid being present in the sintered body as a second phase and optionally further phases, wherein the second phase and optionally the further phases are either amorphous to an extent of more than 10% or are present in amorphous form at the interface to the first phase to a width of at least .gtoreq.5 .ANG. and where the polished surface of the sintered body does not contain any pores having a diameter .gtoreq.1 .mu.m.
Its modulus of elasticity, as a measure for its stiffness, is about 400 Gpa and thus about 5 times the modulus of elasticity of a) or b) and its hardness (HV 2500) is likewise about 4 times as high as that of a) or b).
In addition, its thermal stability allows higher sputtering temperatures, resulting in potentially superior magnetic layers. Thus, the sputtering temperature in the case of a) is limited to .ltoreq.300.degree. C., because the material will otherwise become magnetic. In the case of glass, with the chemical hardening customary for this application, the sputtering temperature is limited to about 400.degree. C. because above this temperature, ion diffusion will result in the hardness effect being lost and there is a risk of deformation.
SiC, in contrast, remains unchanged even at higher sputtering temperatures aimed for, e.g. 500.degree. C.
On a long-term basis, SiC therefore provides for thinner and consequently lighter disks (energy consumption/volumetric data density), higher rotational speeds (more rapid access to data) and lower flying heights (more bits/cm.sup.2) than Al or glass or glass ceramics.
Moreover, for novel substrates for hard disks to be able to compete with the known materials, it ought to be possible to produce them at a low price.
One of the first publications in which SiC is proposed for hard disks is U.S. Pat. No. 4,738,885 (Kyocera) which issued Apr. 19, 1988. The patent states that ceramics sintered at atmospheric pressure are usually highly porous and that hot isostatic pressing is necessary after sintering to close the pores.
U.S. Pat. No. 5,465,184 (CVD Inc.) issued Nov. 7, 1995 and U.S. Pat. No. 5,474,613 (CVD Inc.) issued Dec. 12, 1995 disclose pore-free free-standing CVD-SiC substrates for use as hard disks. Referring to sintered SiC, this publication states that the said material always contains pores.
U.S. Pat. No. 5,480,695 (Tenhover) which issued Jan. 2, 1996 exhaustively discusses the prior art in the field of ceramic substrates for hard disks and discloses a sintered SiC hard disk substrate whose porosity is covered over by a dense, nonstoichiometric SiC layer sputtered onto it. Regarding the sintered material SiC, it is stated that this material is inherently porous and without a coating is therefore not suitable for the fabrication of hard disks.
U.S. Pat. No. 5,302,561 which issued Apr. 12, 1994 and U.S. Pat. No. 5,358,685 which issued Oct. 25, 1994 (Cercom) disclose a special hot-pressed SiC and the corresponding production process. The description states said SiC to be free of pores and that no grains are polished out during polishing and that it is therefore suitable for use as a hard disk.
The only materials known in the prior art which are suitable for the fabrication of hard disks are therefore SiC sintered under pressure (via hot pressing or hot isostatic pressing) or CVD SiC deposited from the gas phase. SiC sintered at atmospheric pressure in this context, given its porosity, requires a coating. So far, all these processes have failed, on technical grounds and on the grounds of cost, to become generally accepted.
It is therefore desirable for materials on the basis of silicon carbide for the fabrication of hard disks to be available which can be produced by means of cost-effective sintering methods.

Pore-free sintered bodies on the basis of silicon carbide which are suitable as substrates for hard disks, and methods for the fabrication thereof


An artificial document generation method generating a larger set of artificial documents which mimics a smaller set of source documents. The method may include deriving metadata parameters from source documents, each parameter characterizing the source documents and having more than one possible value. The deriving may include: determining which ratio of the source documents has each of the values, defining metadata ratios characteristic of the source documents; training a model, on the source documents, to output artificial documents; and running the model as trained thereby to output artificial documents and overriding at least some words generated by the model in the draft artificial documents. Overriding is configured to ensure that at least some of the ratios characteristic of the smaller set of source documents are retained in the larger set.

n-grams are a known term, e.g. en.wikipedia.org/wiki/N-gram.
Artificial text generation is known, and is described e.g. in the following websites:
github.com/minimaxir/textgenrnn
www.kaggle.com/shivamb/beginners-guide-to-text-generation-using-lstms
cs.stanford.edu/˜zxie/textgen.pdf
Tools and platforms which handle synthetic data generation include BizDataX, CA Technologies Datamaker, Deep Vision Data by Kinetic Vision, Delphix Test Data Management, Genrocket, Informatica Test Data Management Tool, Neuromation, Solix EDMS, Supervisely, TwentyBN, and DataGenerator.
A review of synthetic data generation methods is here: www.ijstr.org/final-print/mar2017/A-Review-Of-Synthetic-Data-Generation-Methods-For-Privacy-Preserving-Data-Publishing.pdf.
The following U.S. Pat. No. 10,348,578 (or US 2019/0280947) patent is co-owned and describes simulation of Production Behavior and/or Data; any operations therein may be combined with methods or operations herein.
Academic articles (e.g. www.aclweb.org/anthology/P18-1194/) are known which explore the question of, "Can we combine a neural network (NN) with regular expressions (RE) to improve supervised learning for NLP?".
The disclosures of all publications and patent documents mentioned in the specification, and of the publications and patent documents cited therein directly or indirectly, are hereby incorporated by reference. Materiality of such publications and patent documents to patentability is not conceded.

Method, system and computer program product for generating artificial documents


The invention relates to flexible circuits and more particularly to flexible printed circuits having cover layers. The cover layers may be a chemically-etchable adhesive polyimide. The cover layers may be patterned after they are applied to the flexible circuit substrate.

Flexible circuits typically consist of a polymer substrate and patterned conductive layer on the polymer substrate. Some flexible circuits additionally have protective cover layers. The cover layers are typically pre-patterned polymer films that are placed over the patterned conductive layer and adhered to the polymer substrate layer. The cover layers are patterned so that only portions of the conductive layer are exposed. Adequate application of these cover layers requires precise registration of the cover layer to the flexible circuit as it is applied. If misregistration occurs, an incorrect portion of the conductive layer will be exposed, potentially rendering the flexible circuit defective or useless.

This patent is subject to a terminal disclaimer.


A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

1. Field
Exemplary embodiments of the invention relate to a thin film transistor substrate and a method of manufacturing the thin film transistor. More particularly, one or more exemplary embodiment of the invention relates to a thin film transistor substrate, which is capable of reducing or effectively preventing a decrease in reliability due to an external light incident thereon, and a method of manufacturing the thin film transistor.
2. Description of the Related Art
Generally, a switching element such as a thin film transistor for driving a pixel in a display device includes a gate electrode, a source electrode, a drain electrode, and a channel layer forming a channel between the source electrode and the drain electrode. The channel layer includes a semiconductor layer including amorphous silicon, polysilicon, oxide semiconductor or the like.
The gate electrode is overlapped with the channel layer, and may be disposed above or under the channel layer.
However, electrical characteristics of the semiconductor layer including amorphous silicon, polysilicon, oxide semiconductor or the like, may be deteriorated such as by an external light. Thus, the thin film transistor may include a light-blocking layer to reduce or prevent a decrease in reliability of the switching element.

Thin film transistor substrate and method of manufacturing the same


A circuit (100) for driving an instant-start fluorescent lamp (102) has an inverter (103, 132) and a series-resonant LC oscillator (146, 152). A capacitor (190) begins charging after power-up of the circuit and when its voltage reaches a certain level causes breakdown of a diac (192), which discharges the capacitor into an inverter transistor (132) to trigger operation of the inverter. Re-triggerring of the inverter is prevented by a diode (194) which subsequently discharges the capacitor cyclically, and by a capacitor (186) which enables a transistor (180) at a predetermined time following power-up. The occurrence of a subsequent fault condition causes a capacitor (210) to charge and to enable a transistor (196) which disables the inverter. Charging of the initiating capacitor (190) is prevented by an open circuit between terminal connectors (160, 162) if the lamp is not present.

This invention relates to circuits for driving gas discharge lamps, and particularly, though not exclusively, to circuits for driving fluorescent lamps.
In circuits for driving fluorescent lamps, and particularly in circuits for driving "instant-start" fluorescent lamps (which are designed to start, i.e. to strike an arc between end electrodes, immediately a voltage is applied between its electrodes, without requiring pre-heating of lamp filaments as is typical in other kinds of fluorescent lamps), it may be desirable that the circuit should operate safely and efficiently in the event that a lamp does not strike or in the event of a lamp fault.

Circuit for driving a gas discharge lamp load


A soil treatment apparatus has a plurality of tool units that have at least one bracket, at least one plunger tool and at least one stop for the plunger tool. The bracket with an end section on a chassis is driven up and down to pivot about a first pivoting axis. The plunger tool device is linked at another end section of the bracket to pivot about a second pivoting axis. The stop is formed such that plunging is carried out at a predefined plunging angle. To enable faster operating speeds, the first pivoting axis is provided behind the second pivoting axis as seen in a driving direction, and the plunger tool device is linked such that whenever the bracket is pivoted about the first pivoting axis it is subjected to a centrifugal force in a direction toward a position limited by the stop.

1. Field of the Invention
This invention generally relates to a soil treatment apparatus. More specifically, the present invention relates to a soil treatment apparatus traversable across the soil in a driving direction.
2. Background Information
A soil treatment apparatus is traversable across the soil in a driving direction. This can be realized, for example, by configuring the soil treatment apparatus for linkage mounting on a tractor, or to form it as an automotive unit, or even as a push unit for pushing from behind or as a pull unit for pulling in front or, more generally, as a hand-operated apparatus.
The soil treatment apparatus is provided, in particular, for soil aeration and has a plurality of tool units for this purpose. From U.S. Pat. No. 4,632,189, a soil treatment apparatus having plunger tools moveable up and down by means of a bracket is known. Here again, a plurality of tool units is provided. A single stop beam against which all plunger tools abut, is also pivotally linked to the chassis. The stop beam has only two possible positions, as it is pivotal between an operating position and a rest position. In the rest position all plunger tools are folded to the top, so that the brackets can be further driveably moved without the plunger tools plunging. This has the sole purpose of driving across the soil without the plunging function, for example, when a paved path or the like has to be crossed. This construction entails that the plunger tools rub along the stop common to all plunger tools, which is a drawback with respect to abrasive wear. Moreover, no well-defined plunging angle is achievable with such a construction; plunging is always carried out only with the plunger tools sliding on the stop beam, so that the plunging angle depends on the bracket position and the distance from the soil. Moreover, the brackets are biased against an eccentric shaft by means of a biasing device, which serves to create the up and down movement. This construction is unsuitable for higher speeds, since there is a risk that the brackets are no longer guided on the eccentric disk, at least intermittently, but flung off from the latter. In the context of the plunging function, this entails the risk of extremely hard knocks on the eccentric shaft, which makes faster operation impossible. This is why this apparatus is configured for the walking speed of an operator moving the apparatus.
To make soil treatment quicker and in particular with a defined plunging angle, further developed soil treatment apparatuses have been proposed, as they are described and shown in EP 1 210 853 A1, EP 1 208 730 A1, EP 0 853 869 B1, EP 1 108 350 A1, EP 1 040 741 B1, EP 0 924 975 B1, EP 0 452 449 B1, WO 03/096784 A1, DE 10 2004 018 591 A1 and WO 2006/102869 A1.
These soil treatment apparatuses further developed with respect to the working speed, which are also traversable across the soil in a driving direction, have a plurality of tool units, which also each comprise at least one bracket and at least one plunger tool device. Each of the tool units further has its own stop, however, for the plunger tool device. To enable the plunging movement, the bracket pivots up and down with an end section on the apparatus chassis driven about a first pivoting axis. The plunger tool device is linked on the other end section of the bracket in such a way, that it pivots on the bracket about a second pivoting axis. The stop is formed in such a way that plunging of the plunger tool is carried out at a predefined plunging angle. Driving is by means of a crank drive, the crank linked to the bracket by means of a drive rod.
The soil treatment apparatuses known from the above mentioned references are formed in such a way that the plunger tool is driven into the soil when the bracket is pivoted downward about the first pivoting axis. Herein, the stop of the plunger tool serves to determine the plunging angle. By associating each plunger tool with its own stop the plunging angle can be precisely predetermined and adjusted. As the plunger tool is plunged into the soil and the soil treatment apparatus is driven in the driving direction, the plunger tool device leaves the associated stop due to the resistance in the soil and is pivoted about the second pivoting axis. This is how loosening of the soil is achieved due to pivoting of the plunger tool within the soil. As the bracket is pivoted upward again, the plunger tool is withdrawn from the soil. As soon as it leaves the soil, the plunger tool device, for example due to a biasing device, returns to engagement on the stop. In the soil treatment apparatuses as known from EP 1 108 350 A1, EP 1 040 741 B1, EP 0 924 975 B1 and EP 0 452 449 B1, the stop is arranged to be moved in the area of the second pivoting axis on and together with the other end section of the bracket. In apparatuses as described and shown in principle in EP 0 853 869 B1, a stop resides in the area of a telescopic means moved together with the bracket, which also includes the biasing device.
In all of these faster soil treatment apparatuses, the brackets, with their free end sections, to which the plunger tool is linked, are directed against the driving direction. In other words, the first pivoting axis is in front of the second pivoting axis as seen in the driving direction. The bracket therefore is subjected to tensile stress as the soil treatment apparatus drives on while the plunger tool is stuck in the soil to then withdraw the plunger tool from the soil. This tensile stress has been deemed advantageous in view of a faster operating speed, since fewer shocks overall are transmitted to the apparatus chassis. Attempts have been made, in particular, to absorb these shocks by spring elements to enable even faster operation.
Further approaches for enabling faster operation have been described in WO 2006/102869 A1. Herein, the stop hitherto always moved together with the bracket has been located external to this combined-movement system and is now associated with the fixed chassis. The relative movement of the plunger tool to the bracket is then transmitted by a corresponding drive out of the system pivoted up and down together with the bracket to the fixed system and damped there. This is intended to reduce the moved masses and to make the vibrations in faster operation better manageable. More elaborate damping measures, such as hydraulic damping, thus become possible.