A method and apparatus are disclosed for dynamically altering accessing of storage drives based on the technological limits of the drives. Operating parameters are set for each drive based on the technological limits for accessing that drive's type of technology. The operating parameters are then monitored during accessing of each one of the storage drives. The ones of the storage drives that have exceeded the operating parameters are identified. The accessing of the identified storage drives is altered so that none of the storage drives exceeds the operating parameters.

1. Field of the Invention
The present invention relates generally to data storage drives, and particularly to a method and apparatus for dynamically altering the accessing of storage drives based on the technology limits of the drives. Still more particularly, the present invention provides a method and apparatus which permits using low duty cycle drives for high duty cycle applications without using write duty cycle throttling or needing drive recovery.
2. Background of the Invention
A data storage subsystem is a peripheral of a computer system and is used to store data for the computer system. A data storage subsystem typically includes one or more disk or tape drives and a controller for managing the drives included in the storage subsystem. A data storage subsystem is not a stand alone computer system. Although a storage subsystem does execute an operating system, users may not interact directly with the storage subsystem. A user may interact directly with computer systems, but may not interact directly with a data storage subsystem.
Disk drives are designed to operate up to a maximum access rate. Thus, some drives are implemented with a technology that is considered to be low duty cycle such that the maximum access rate is low; while other drives are implemented with a technology that is considered to be high duty cycle with higher access rates. High duty cycle technology drives can be accessed reliably more rapidly than the low duty cycle technology drives. When a low duty cycle disk drive is used for high duty cycle applications that execute accesses more rapidly, data being written on the drive can be corrupted. The data corruption occurs because the head on a disk drive, which is designed using a technology that supports only slower accesses, is exposed to a heavy write activity that exceeds the upper limits of the low duty cycle technology. The head gets hot which results in bad data being written to the disk drive. This problem results in disk media failure which results in loss of the disk drive. The heat problem can also be caused in a similar manner by heavy read activity.
The prior art solution to fix this problem is to throttle the disk drive write activity by keeping track of the write duty cycle on a drive within a particular period of time. This approach addresses the problem after the problem has already occurred at the disk drive.
Therefore, the current technology would be improved by a method and apparatus for dynamically altering the accessing of storage drives based on the technology limits of the drives.

Method and apparatus for dynamically altering accessing of storage drives based on the technology limits of the drives


The present invention discloses a recliner regulating device comprising a cam, a return spring, a housing plate, a ratchet gear connected with a central shaft. The external hook of the return spring is fixed in a hole of the housing plate. Sliders are fitted in sliding grooves of the housing plate with the bosses of the sliders being attached with the sliding grooves of the cam. Wedges are fitted in the sliding grooves of the housing plate with the bosses of the wedges being attached with the sliding grooves of the housing plate. The sliding grooves for sliders are perpendicular to the sliding grooves for wedges. A two-point locking-up is formed between the self-locking surfaces of the sliders and the self-locking surfaces of the wedges after the position of the cam is fixed through the central shaft under the action of the return spring.

At present, functions of angle-regulating and back's quick-folding can be realized in most of the recliner which then will be locked up after the angle-regulating is completed so as to fix the angle between the recliner seat and the recliner back.
The prior mode to achieve the above mentioned functions is disclosed for example in Chinese Utility Model Patent No. 200420017699.4 titled "Plate spring type armchair angle regulating and back folder nuclear installation". As shown in FIG. 1, in this device, two sliders 103 are supported by two self-locking surfaces 102 of the locking cam 101 under the action of the return spring. Therefore, the engagement between the slider teeth on two sliders 103 and the ratchet gear teeth is more stable, thereby the angle of the chair can be fixed after the angle between the chair seat and the chair back is regulated.
In the above armchair angle-regulating device, there is only one bearing point at the self-locking surface 102 of the self-locking cam 101 between each slider 103 and the locking cam 101. As a result, after the angle between the chair seat and the chair back was regulated and fixed when a user leans against and exerts forces on the chair back, the problem caused by supporting each slider 103 at only one point is that the engagement strength between the teeth of the slider 103 and the ratchet gear teeth is low, which causes the chair back unstable.

Hubei Aviation Precision Machinery Technology Co., Ltd.


An apparatus for detecting ventricular tachycardia includes a first and snd calculation unit, each having an input side connected to a ventricle sensor and an atrium sensor, respectively, and to a timer, for calculating the R--R and P--P intervals between respective successive electrical activities in the atrium and in the ventricle. A threshold value memory stores at least one threshold value for the R--R intervals in memory. A first comparator unit compares the R--R intervals with the at least one threshold value. A first and second interval memory store a predetermined number of calculated R--R and P--P intervals, respectively, or mean R--R and mean P--P interval values. A second comparator unit compares the P--P intervals with the R--R intervals. A third and fourth calculation unit, connected to the output of the first and second calculation unit and/or of the first and second interval memory unit, respectively, calculate the change over time between successive P--P and R--R intervals. First and second criterion memories stores predetermined stability criterion for the change over time between successive P--P and R--R intervals, respectively. A third and fourth comparator unit compare the calculated change over time in the P--P and R--R intervals with the associated stability criterion stored in memory.

The invention relates to an apparatus for detecting ventricular tachycardia. Such an apparatus can be made in the form of an independent diagnostic unit or as a component of a cardiac pacemaker with an antitachycardia operating mode or in the form of a defibrillator or cardioverter.
The treatment of tachycardial disturbances in heart rhythm is one of the most important tasks in cardiology and in particular is a primary field for the use of electrical stimulation of the heart. In view of the manifold forms such problems can take and their manifold causes, extensive attempts have been made for years to improve the preconditions for therapeutic success by refining the classification of tachycardial arrhythmias and associating them more exactly with typical defects in the cardiac stimulus conduction system.
Because pathological ventricular tachycardias (hereinafter also abbreviated "VT") are so widespread and so needful of treatment on the one hand, and because they have a good chance of successful treatment with special pacemaker pulse trains on the other, reliably distinguishing them from other arrhythmias, and especially physiological tachycardias, ventricular fibrillations ("VF") or supraventricular tachycardia ("SVT")--including under special circumstances--has proven to be an especially important problem.
In German Patent Application DE-A 44 39 256, it is proposed that the relative distribution of heartbeat intervals, which can be considered as fibrillation intervals or tachycardia intervals, within predetermined time ranges can be utilized to classify the prevailing type of arrhythmia. This is intended to take proper account of the fact that in practice, the interval lengths in ventricular tachycardia on the one hand and fibrillation on the other often overlap considerably.
A great many other approaches--which will not be described in detail here--to solving these problems seek to employ analysis of the three-dimensional propagation or correlation of depolarizations in the cardiac tissue. This requires implanting many electrodes for signal detection--sometimes even pericardially--and for this reason, if for no other, has little chance of being realized.
In U.S. Pat. No. 4,860,749, a method for distinguishing ventricular tachycardia from a sinus or other kind of supraventricular tachycardia is described, in which the atrial heart rate and the ventricular heart rate (the inverse values of each will hereinafter also be called the "P--P interval" or "R--R interval") as well as the A-V interval (hereinafter sometimes also called the "P-R interval") are measured. If the R--R interval is within a predetermined range and is shorter than the P--P interval, then the condition is readily classified as ventricular tachycardia. If the atrial and the ventricular rate are approximately the same as a consequence of 1:1 A-V conduction or retrograde conduction, then the measured A-V interval is subjected to a comparison with a predetermined value ("sinus A-V interval"), and the classification criterion is obtained from the outcome of the comparison.
In U.S. Pat. No. 5,325,856, a method for distinguishing between ventricular and supraventricular tachycardias is proposed, which is based on a comparison of the divergence over time in the P-R and R--R values with two predetermined threshold values at the onset of the tachycardia.
U.S. Pat. No. 5,327,900 describes a method for distinguishing between pathological and physiological (sinus) tachycardias at a comparable atrial and ventricular rate, which is based on the association of the measured A-V interval with a predetermined A-V time slot, which has been determined from the A-V interval during normal sinus rhythm. This algorithm is comparatively simple; however, thus far there is no proof of its being efficient enough to make such distinctions.
European Patent Application EP-A 0 597 459 describes a method in which if the R--R and P--P intervals agree, a comparison is first made between the length of the A-V (P-R) interval and a predetermined base value, and finally--if that comparison does not produce a conclusive result--a test stimulation in the atrium is performed, and the classification is made on the basis of the stimulated heart response, in particular changes over time in the R--R intervals.

Recognizing ventricular tachycardia condition using dual chamber sense information

Biotronik Mess-und Therapiegeraete GmbH & Co. Ingenierbuero Berlin


According to one embodiment, a display device includes a first substrate, a second substrate, a liquid crystal layer and a seal. The second substrate is opposed to the first substrate. The liquid crystal layer is disposed between the first substrate and the second substrate. The seal bonds the first substrate to the second substrate together and seals the liquid crystal layer. The first substrate includes a light source disposed at a position overlapping the seal in a planar view. The light source is sealed by the seal.

In recent years, wearable devices equipped with a touch detection function (e.g., wristwatch-type wearable devices and the like) have been gradually widespread. Such a wearable device is often provided with a reflective type liquid crystal display panel. Although the reflective type liquid crystal display panel is excellent in visibility in an environment with high external light intensity, the reflective type liquid crystal display panel has a problem that the visibility is degraded in an environment with low external light intensity.
In order to solve this problem, a configuration is proposed in which a front light that emits light from above a liquid crystal display panel toward the liquid crystal display panel is provided. However, in this configuration, since it is necessary to provide a substrate for the front light separately from the liquid crystal display panel, there is another problem that the device size is enlarged and the device is not suitable for a wearable device.


An array substrate for a liquid crystal display device includes a gate line, a data line including a first data line having a first width and a second data line having a second width overlying the first data line, the second width is larger than the first width, a pixel electrode in a pixel region and defined by a crossing of the gate line and the data line, the pixel electrode being formed during a same process as the second data line, and a thin film transistor connected to the pixel electrode.

1. Field of the Invention
The present invention relates to a liquid crystal display device, and more particularly, to an array substrate for a liquid crystal display device and a manufacturing method of the array substrate for the liquid crystal display device.
2. Discussion of the Related Art
Generally, a liquid crystal display device includes a lower substrate, commonly referred to as an array substrate, that includes a thin film transistor, and an upper substrate, commonly referred to as a color filter substrate, that includes a color filter, and a liquid crystal material interposed between the upper substrate and the lower substrate. The liquid crystal display device makes use of optical anisotropy and polarization properties of the liquid crystal material to display images. Presently, active matrix LCD (AM LCD) devices are one of the most popular means for displaying images because of their high resolution and superiority in displaying moving images.
FIG. 1 is a cross-sectional view of a liquid crystal panel according to the related art. In FIG. 1, a liquid crystal panel 20 includes an upper substrate 4 and a lower substrate 2. The upper substrate 4 and the lower substrate 2 are spaced apart from each other with a liquid crystal material layer 10 interposed therebetween. The upper substrate 4 includes a color filter 8 to display color images, and the lower substrate 2 includes a switching element to change an alignment orientation of liquid crystal molecules of the liquid crystal material layer 10. The upper substrate 4 includes a black matrix 9 that is formed beneath a transparent substrate 1 to intercept light in a region other than a pixel region P. A color filter 8, which has sub-color-filters red (R), green (G), and blue (B) in a repetitious order, is formed under the black matrix 9 to display color images by transmitting only the light of particular wavelength range. A common electrode 12 is formed beneath the color filter 8 to apply a voltage to the liquid crystal material layer 10. A switching element, thin film transistor "T," is formed on a transparent substrate 1 of the lower substrate 2. A pixel electrode 14, which receives a signal from the thin film transistor "T" and applies a voltage to the liquid crystal material layer 10, is formed on the lower substrate 2 within the pixel region P. An alignment layer (not shown) is formed on interior surfaces of the common and pixel electrodes 12 and 14 to align the liquid crystal molecules along a uniform direction.
FIG. 2 is a flow chart showing a photolithographic masking process for a liquid crystal display device according to the related art. The photolithographic masking process uses a photoresist material that undergoes a chemical reaction when exposed to light. Specifically, the photoresist material is coated on a substrate, and then a desired photoresist pattern is obtained by irradiating light onto the coated photoresist material layer using a mask. The mask includes a plurality of light block portions and a plurality of light transmission portions. The photoresist material can be classified into two types: a positive photoresist material and a negative photoresist material. When the positive photoresist material is used, a portion of the photoresist material that is exposed to light is removed during a subsequent development process. The positive photoresist material is commonly used for forming the black matrix and array elements, and the negative photoresist material is commonly used for patterning the color filter.
In FIG. 2, the photolithographic masking process includes a first step ST1 that is a photoresist coating process. During the first step ST1, a spin coating method is used to form a flat and uniform photoresist layer. During a second step ST2, a soft baking process for hardening the coated photoresist is performed. A third step ST3, includes a exposure process. During the third step ST3, the mask, which has mask patterns on a transparent substrate, is positioned over the coated photoresist material layer, and the coated photoresist material layer is exposed to light of a masking and exposure apparatus. A fourth step ST4 includes a development process. During the fourth step ST4, a particular portion of the photoresist layer is removed using a developer. During a fifth step ST5, a hard baking process is performed for improving a contact property between the coated photoresist material layer and a corresponding underlayer.
During the third step ST3, since the light exposure is performed in a way to transcribe a desired pattern onto the photoresist material layer using the masking and exposure apparatus that uses lens and mirrors to direct the light, a pattern distortion phenomenon, which is caused by the lens and mirrors of the light exposing apparatus, cannot be accurately controlled. For example, if a first pattern is distorted and a second pattern is to be formed on the basis of the first pattern, then the second pattern may be formed in a region displaced from a desired point. Accordingly, an overlay accuracy between the first and second patterns is decreased, and corresponding overlay differences increase as a number of subsequent processes are added. Moreover, if the overlay differences between the pixel region and an adjacent line increases, display quality of the images decreases.
FIG. 3 is a plan view illustrating a partial array substrate of a liquid crystal display device according to the related art. In FIG. 3, a horizontal gate line 32, which includes a gate electrode 30 and a capacitor electrode 31, is formed on an array substrate. A vertical data line 44, which includes a source electrode 40, crosses the gate line 32, thereby defining a pixel region. A drain electrode 42 is spaced apart from the source electrode 40. The gate electrode 30, the source electrode 40, and the drain electrode 42 constitute a thin film transistor T. A pixel electrode 50, which is connected to the thin film transistor T, is formed in the pixel region. The gate line 32 applies a scan signal to the pixel electrode 50, and the data line 44 applies a data signal to the pixel electrode 50. There may exist a parasitic capacitance, i.e., a coupling capacitance, between the data line 44 and an adjacent pixel electrode 50. Accordingly, if the parasitic capacitance value is different in each pixel region, then a deterioration of displayed images, such as a spot on the screen, may occur. The capacitance can be expressed numerically as follows:C=∈(A/d)  (1)where "C" is a capacitance, "∈" is a dielectric constant of insulator, "A" is an area of an electrode and "d" is a distance between electrodes. Accordingly, since a distance between the data line 44 and the pixel electrode 50 affects the coupling capacitance value, it is necessary to maintain a uniform distance between the data line 44 and the pixel electrode 50 to maintain the quality of the displayed images.
FIGS. 4A to 4C are cross-sectional views taken along A—A, B—B of FIG. 3, and illustrating a fabrication process for an array substrate according to the related art.
In FIG. 4A, a thin film transistor "T" and a data line 44 are formed on a transparent substrate 1. A gate electrode 30 is formed on the transparent substrate 1, and a gate insulating layer 34 is formed on the gate electrode 30 and on the substrate 1. An active layer 36a is formed by depositing amorphous silicon (a-Si) on the gate insulating layer 34, and an ohmic contact layer 36b is formed by depositing doped amorphous silicon on the active layer 36a. The active layer 36a and the ohmic contact layer 36b constitute a semiconductor layer 36. A source electrode 40 and a drain electrode 42, which is spaced apart from the source electrode 40, are formed on the semiconductor layer 36. A channel ch is formed between the source electrode 40 and the drain electrode 42 by removing a portion of the ohmic contact layer 36b between the source electrode 40 and the drain electrode 42, thereby exposing the active layer 36a between the source electrode 40 and the drain electrode 42. The gate electrode 30, the semiconductor layer 36, the source electrode 40, the drain electrode 42 and the channel ch constitute the thin film transistor T. The data line 44 is formed simultaneously with a forming process of the source electrode 40 and the drain electrode 42.
In FIG. 4B, a passivation layer 46 is formed on the thin film transistor T and on the data line 44 to protect the thin film transistor T. A drain contact hole 48 is formed through the passivation layer 46 to expose a portion of the drain electrode 42.
In FIG. 4C, pixel electrodes 50, which include a transparent conductive material, are formed on the passivation layer 46. The pixel electrodes 50 contact the corresponding drain electrodes 42 through the drain contact holes 48. The pixel electrodes 50 are uniformly positioned on both sides of the data line 44 by a distance "a" between the data line 44 and the pixel electrode 50 on the left side, and a distance "b" between the data line 44 and the pixel electrode 50 on the right side. However, during the photolithographic masking process, pattern distortion occurs.
FIG. 5 is a cross-sectional view illustrating an array substrate for a liquid crystal display device according to the related art. In FIG. 5, since a distance "a" between the data line 52 and the pixel electrode 54 on the left side is smaller than a distance "b" between the data line 52 and the pixel electrode 54 on the right side, the coupling capacitance of each region between the data line 52 and the pixel electrode 54 is different, whereby a voltage that is applied to each pixel electrode is different. Accordingly, if the voltage applied to each pixel is different, an alignment orientation of the liquid crystal material cannot be uniformly controlled. Thus, the quality of the displayed images deteriorates. Moreover, since a rework of the photolithographic masking process is necessary to prevent deterioration of the displayed images, processing time increases and production yields decrease.

Array substrate for a liquid crystal display device and manufacturing method for the same


The Eccentrically displaceable sleeve type shut-off valve is comprised of a housing having a central, vertical bore retaining therein a flexible, tubular sleeve whose central portion can be eccentrically motivated towards or away from a valve seat and which is located perpendicularly towards and at the center of said vertical bore, by a core element positioned inside said sleeve and which is capable of being radially displaced by a cam type mechanism following the reciprocal movements of a valve stem.

This invention relates to packless shut-off valves used to block the flow of fluid in a piping conduit. A typical example of a packless valve used for this purpose is a diaphragm valve as illustrated, for example, in U.S. Pat. No. 4,014,514. These valves provide good closure means and are reasonably compact. However, since the diaphragm acts both as a closure member and a stem seal, these diaphragms have to be fairly large and are typically two to three times the diameter of the valve orifice. The result is a requirement for substantial actuating forces to overcome the forces created by the diaphragm area times fluid pressure. In case the diaphragm is made out of a plastic, such as PTFE (Polytetrafluoroethylene), routine repeated closure of such a diaphragm is not guaranteed due to the high mechanical stress imposed upon by the large flexible movement required for such a diaphragm. Another disadvantage of a diaphragm valve is their highly streamlined flow passage which can lead to cavitation and wear under high fluid velocities. Finally, the body size of a typical diaphragm valve is fairly large in comparison to the port opening which makes the construction of such a valve fairly expensive.
My invention overcomes these and other objections to valves of prior art by using a flexible tube as a closure element and stem sealing device. The flexible tube itself can be made from any commercial elastomeric or plastic, such as PIFE (Polytetrafluoroethylene) without imposing undue stresses on the material. The relatively small amount of radial displacement of the sealing material requires only moderate actuating forces which leads to substantial cost savings as far as actuating devices are concerned. In comparison to diaphragm valves, which have relatively large areas subject to fluid pressure and, therefore, high stresses, my flexible tube is supported over more than 90% of the exposed area by an interiorly placed mechanical element resulting again in relatively low stress levels, thereby guaranteeing a substantially higher number of life cycles. Another advantage lies in the fact that my sealing tube diameter is only about 65% larger than the valve port diameter, therefore, requiring a relatively small valve housing and valve closure flanges. Finally, my invention provides for a valve that can be utilized in full vacuum without fear of the sealing membrane collapsing under a negative pressure gradient as is the case with typical diaphragm valves. These and other important advantages will be explained more clearly by the following drawings and descriptions.


A tubular garment sheath system includes a first tubular garment sheath assembly having a first stretchable top piece, a first stretchable bottom piece, a first first end having at least one first pocket, and a first second end having at least one male fastener; and a first interior volume; and a second tubular garment sheath assembly having a second stretchable top piece, a second stretchable bottom piece, a second first end having at least one second pocket, a second second end having at least one female fastener; and a second interior volume. The tubular garment sheath system is structured and arranged to keep the first arm and the second arm warm during sudden temperature changes by shielding the first arm and the second arm from cold temperatures while preventing body heat from escaping from the first arm and said second arm.

1. Field of the Invention
The present invention relates generally to the field of cold weather apparel for warmth and protection from colder temperatures and more specifically relates to a tubular garment sheath system.
2. Description of the Related Art
Clothing is fiber and textile material worn on the body. The wearing of clothing is mostly restricted to human beings and is a feature of nearly all human societies. The amount and type of clothing worn depends on physical, social and geographic considerations, including sex.
Physically, clothing serves many purposes: it can serve as protection from the elements, and can enhance safety during hazardous activities such as hiking and cooking. It protects the wearer from rough surfaces, rash-causing plants, insect bites, splinters, thorns and prickles by providing a barrier between the skin and the environment. Clothes can insulate against cold or hot conditions. Further, they can provide a hygienic barrier, keeping infectious and toxic materials away from the body. Clothing also provides protection from harmful UV radiation.
A scarf, also known as a neck-wrap is a piece of fabric worn around the neck, or near the head or around the waist for warmth, cleanliness, fashion or for religious reasons. They can come in a variety of different colors but are often singular in purpose.
Various attempts have been made to solve problems found in cold weather apparel for warmth and protection from colder temperatures art. Among these are found in: U.S. Pat. No. 4,706,304 to David J. Jones; U.S. Pat. No. 4,559,647 to Rae Smith et al.; U.S. Publication No. 2012/0204318 to James Martin Dark. This prior art is representative of convertible accessory garments with multi-purpose uses for arm-coverage, warmth and comfort, and fashionable neckwear. None of the above inventions and patents, taken either singly or in combination, is seen to describe the invention as claimed.
Ideally, a tubular garment sheath system should be user-friendly and safe in-use and, yet may operate reliably and be manufactured at a modest expense. Thus, a need exists for a tubular garment sheath system which is structured and arranged to keep a first arm and a second arm warm during sudden temperature changes by shielding the first arm and the second arm from cold temperatures while preventing body heat from escaping from the first arm and the second arm and to avoid the above-mentioned problems.


The application discloses markers associated with organ transplant rejection and associated conditions, and in particular provides materials and methods for the diagnosis, prognosis or treatment of chronic rejection of transplanted organ such as heart and kidney. Examples of the markers include ribosomal protein L7, β-transducin, 1-TRAF (also known as TANK) or lysyl-tRNA synthetase, or antibodies against these antigens.

There are generally recognised to be three types of organ rejection: hyperacute, acute and chronic. Hyperacute rejection generally occurs within twenty-four hours of the transplantation, and is readily detected. Acute rejection is generally regarding as rejection occurring within the first six months of transplantation. Acute rejection can be diagnosed relatively easily, for example, in the case of a cardiac transplant by the appearance of certain cell types in biopsy cell infiltrate, and in the case of kidney and liver transplants by the change in the levels of certain serum enzymes. Chronic rejection, generally regarded as that occurring at least six months after transplantation, is very difficult to diagnose clinically, and may not manifest itself clearly for some years, by which time treatment is generally unsuccessful.
In chronic rejection there is typically vasculopathy in the rejected organ. Transplant associated coronary artery disease (TxCAD), a rapidly progressing obliterative vascular disease developing in transplanted heart, is the most important complication after the first year of cardiac transplantation, with an incidence of 40% at five years post transplant. A similar vasculopathy occurs following kidney transplantation where it is designated chronic rejection. Higher incidences of the disease are reported using intravascular ultrasound. Histologically, the grafted vessels become occluded with an intimal lesion consisting of smooth muscle cells, myofibroblasts and deposition of extracellular matrix proteins.
The aetiology of TxCAD remains ill defined and several immunological and non-immunological factors have been reported to associate with the risk of TxCAD. This complicated aetiology means that TxCAD remains difficult to diagnose clinically. The denervated heart, for example, prevents anginal symptoms and the diffuse concentric distribution of the lesions can obscure angiographic evidence of stenosis. Chronic rejection of other organs can also be very difficult to diagnose clinically. For example, in the case of renal transplants, rejection cannot be distinguished from cyclosporin nephrotoxicity.
Immunological damage to transplanted organs continues to be the major complication and significant cause of morbidity and mortality, especially following cardiac transplantation. T cells have been described immunocytochemically beneath the endothelium in atherosclerotic plaques from patients with accelerated coronary artery disease. It is likely, however, that T cells invade the endothelium at an early stage of the disease long before there is angiographic evidence of abnormalities. Integrity of the endothelium is recognised as being a crucial factor in maintaining normal vessel function and endothelial injury is probably the earliest event which initiates all forms or arteriosclerosis. Anti-endothelial antibodies can be highly destructive, for example they cause rapid rejection of xenografted organs. Although there is compelling evidence from experimental models to support a pathogenic role of antibodies in chronic rejections, the association in humans remains far from clear, in particular regarding the specificity of antibodies made after transplantation and whether in fact such antibodies can damage graft tissues.
Until recently, endothelial autoantigens have been characterised using Western blotting. Western blotting methods separate endothelial peptides by one dimensional gel electrophoresis. This method can only display a limited number of antigens because many different peptides, having the same molecular weight but different electrophoretic charges, will appear in the same band. A better approach is to separate endothelial peptides by charge and molecular weight using 2-D electrophoresis and probe the subsequent blots with patient sera.
We have previously used these techniques to identify approximately 40 immunoreative cytosolic proteins of which around 30% could be identified by end terminal amino acid sequencing. The most abundant immunoreactive antigen was identified as being the intermediate filament vimentin, see U.S. Pat. No. 5,716,787 and Wheeler et al, 1995. Accordingly, these references disclose that the cytoskeletal protein vimentin or anti-vimentin antibodies are markers that can be used in the diagnosis of TxCAD or chronic rejection in renal transplantation.
However, 2-D electrophoresis suffers from the problem that it can lack the sensitivity to detect the most immunoreactive proteins as they may not be abundant enough to allow their chemical characterisation. Accordingly, it remains a continuing problem in the art to find markers which can provide an accurate and early diagnosis of chronic rejection.

Organ transplant rejection and associated conditions


Cryopump apparatus and method for controlling the operating temperature of a cryoarray in a cryopump. The cryopump has means for thermally isolating one of more of the cryoarrays from the refrigeration source. The means for thermally isolating is a thermal switch formed from at least first and second switch elements made of materials having dissimilar coefficients of thermal expansion. The thermal switch is also used in isolating one of the pump's cryoarrays during a partial regeneration process. The thermal switch of the preferred embodiment may also be used to prevent one of the pump's cryoarrays from falling below a predetermined operating temperature.

Cryogenic vacuum pumps (cryopumps) are widely used in high vacuum applications. Cryopumps remove gases from a vacuum chamber by cooling the gases and then binding the gases to cold surfaces inside the pump. Cryocondensation, cryosorption and cryotrapping are the basic mechanisms that can be involved in the operation of a cryopump. In cryocondensation, gas molecules are condensed on previously condensed gas molecules. Thick layers of condensate can be formed, thereby pumping large quantities of gas.
Cryopumps are widely used for applications where contamination by non-process gases such as hydrocarbons must be avoided. Cryopumps typically use a closed loop helium refrigerator. Refrigeration is produced in a first stage operating at 50 to 80 degrees K and a second stage at 10 to 20 degrees K. Conducting metal surfaces called cryoarrays are attached to the refrigerator stages and are cooled thereby. Easily condensed gases, such as water vapor, argon, nitrogen and oxygen, are pumped by cryocondensation on the first and second stage cryoarrays. However, the lowest temperature achievable in a refrigerator cooled cryopump is sufficiently high (about 10.degree. Kelvin) that not all gases normally present in a vacuum system can be pumped by cryocondensation. The gases which are difficult to condense, such as hydrogen, helium and neon, must be pumped by cryosorption. For this purpose, a sorbent material such as activated charcoal is attached to the second stage cryoarray. Further, only relatively low amounts of gas can be pumped by cryosorption, as only a thin layer (up to about 5 monolayers) can be formed on the surfaces of the sorbent material.
Cryopump applications are requiring the first stage of the cryopump to be maintained at a particular and uniform temperature. One cryopump attempts to meet this requirement by providing a heater in thermal contact with the first stage cryoarray. The heater works against the action of the refrigeration source by adding heat to the first stage to maintain a predetermined temperature, as measured by a temperature sensor.
The use of heaters to maintain the temperature of the first stage array detracts from the overall efficiency of cryopumps in several ways. First, the heat applied to the first stage cryoarray adds to the cooling load of the refrigeration source. In addition, heat added to the first stage can degrade the operational conditions of the second stage by raising its temperature, thereby reducing the pump's overall efficiency. Finally, the power used to operate the heater adds to the power needed to operate the entire cryopump system, thereby making the system less energy efficient.
Ultimately there is a limit to the amount of gases that can be pumped by a cryopump, necessitating a need for the pump to be regenerated. The usual process for regeneration involves decoupling the cryopump system from the chamber it is pumping, deactivating the refrigerating system, and allowing the cold surfaces within the pump to warm and release captured gases. Once the gases are released and vented from the vacuum system, a secondary roughing pump is used to restart the vacuum pump-down. After a suitable vacuum level is achieved, the cryopump is restarted by reactivating the refrigerator to recool the internal surfaces so that the internal mechanism can recommence the normal operation of cryopumping. This regeneration process of boiling off and venting the contaminant gases and reestablishing normal vacuum conditions for cryopump operation usually takes several hours, and the time consumed this way prevents the use of the pump for its intended purposes.
U.S. Pat. No. 4,763,483, although primarily concerned with pump-down concept, discloses the regeneration of the cryopump through the movement of the cooling segments of each stage away from the cryoarrays of each stage while the refrigeration system continues to function. The pump is then brought on-line by starting the first stage and bringing it to a certain level of operation at which time the second stage is reconnected and made operational.
It is an object of this invention to provide a cryopump having an isolation mechanism for temporarily breaking the thermal contact between the refrigerating system and one or more of the arrays of the cryopump. It is a further object of this invention to use a thermal isolation mechanism to perform a partial regeneration by only regenerating the condensed gases on the second stage array of the cryopump. It is yet a still further object of this invention to be able to do a partial or full regeneration by choice using the techniques of this invention. It is yet another object of this invention to provide an isolation mechanism for automatic and noninvasive temperature control of the first array of a cryopump.


The present invention relates to a grating image having one or more grating fields, each of which includes an electromagnetic radiation-influencing grating pattern comprising a plurality of grating lines, the grating lines being characterized by the parameters orientation, curvature, spacing and profile. According to the present invention, in the grating image, a grating field (30) that is separately perceptible with the naked eye includes an electromagnetic radiation-influencing grating pattern having grating lines (32) for which at least one of the characteristic parameters orientation, curvature, spacing and profile varies (34) across the surface of the grating field.

1. Field of the Invention
The present invention relates to a grating image having one or more grating fields, each of which includes an electromagnetic radiation-influencing grating pattern comprising a plurality of grating lines, the grating lines being characterized by the parameters orientation, curvature, spacing and profile. The present invention further relates to a method for manufacturing such a grating image, as well as a security element, a security paper and a data carrier having such a grating image.
2. Description of the Prior Art
To ensure the authenticity of credit cards, banknotes and other value documents, holograms, holographic grating images and other hologram-like diffraction patterns have been used for several years. In general, in the field of banknotes and security, holographic diffraction patterns are used that can be manufactured by embossing holographically produced grating images in thermoplastically moldable plastics or UV-curing lacquers on foil substrates.
True holograms are created by illuminating an object with coherent laser light and superimposing the laser light scattered by the object with an uninfluenced reference beam in a light-sensitive layer. So-called holographic diffraction gratings are obtained when the superimposed light beams in the light-sensitive layer consist of spatially extended, uniform, coherent wave fields. Through the action of the superimposed wave fields on the light-sensitive layer, for example a photographic film or a photoresist layer, a holographic diffraction grating is created there that can be preserved in the form of light and dark lines in a photographic film or in the form of peaks and valleys in a photoresist layer. Since, in this case, the light beams were not scattered by an object, the holographic diffraction grating produces merely an optically variable color impression, but no image representation.
From holographic diffraction gratings, it is possible to produce holographic grating images, not by covering the entire surface of the light-sensitive material with a uniform holographic diffraction grating, but rather by using suitable masks to cover, in each case, only portions of the recording surface with one of multiple different uniform grating patterns. Such a holographic grating image is thus composed of multiple grating fields having different diffraction grating patterns that normally lie next to one another in a planar, strip-shaped or pixel-like design. With such a holographic grating image, it is possible to depict numerous different image motifs through suitable arrangement of the grating fields. The diffraction grating patterns can be produced not only through direct or indirect optical superimposition of coherent laser beams, but also by means of electron lithography. Frequently, a sample diffraction pattern is produced that is subsequently translated into a relief pattern. This relief pattern can be used as an embossing die.
From publication DE 102 26 115 A1 are known grating images that are not composed of individual pixels or strips, but rather in which large grating fields that are perceptible with the naked eye are covered with a uniform grating pattern. In this way, since unexposed empty spaces are avoided and only a few discontinuous transitions are present between the large-area grating fields, a high light intensity of the grating images is achieved.
Based on that, it is the object of the present invention to further improve grating images of the kind cited above, and especially to create grating images having new optical effects and/or to further increase the counterfeit security of the grating images while preserving the existing advantages.

Grid image with one or several grid fields


A multi-purpose adjustable doorjamb assembly includes at least three elongate members: a first side member, a second side member, and a cross member. Each elongate member has an inside longitudinal face opposite an outside longitudinal face. Each face has a longitudinal notch defined therein. The side members are attached to either ends of the cross member to form an open-sided rectangle. The assembly may also include at least three door stops. The jamb assembly may be used to accommodate swinging doors, bi-fold doors, or sliding doors. Finally, each elongate member may include a front longitudinal edge and a back longitudinal edge. Each edge has a longitudinal trim notch. The assembly further includes L-shaped trim members each having a mating leg for adjustably mating with the trim notch and a decorative leg. By using a trim member on both sides of an elongate member both narrow and wide walls can be accommodated.

The present invention relates to a multipurpose doorjamb assembly for use with swinging, bi-fold, or sliding doors.
A conventional method used in constructing a doorway in a wall uses a doorjamb assembly (jamb) consisting of left and right side members, a top or cross member (also called a header or lintel), and an optional bottom member. Each member generally consists of at least two pieces that may be adjustably interconnected and then held together so that the cumulative width of the connected pieces is equal to the width of the wall. Examples of this type of jamb assembly are shown in U.S. Pat. No. 4,589,229 to Warren, U.S. Pat. No. 2,736,930 to J. P. Longley, and U.S. Pat. No. 5,365,708 to Winston. One problem with this two-piece construction is that the members are substantially weaker when they are connected to form a maximum width than when they are connected to form their minimum width. Also, the weakness is generally at the point of interconnection that, when centrally located, generally supports the weight of the door. Other problems associated with using multiple pieces is that it multiplies proportionally the necessary work, expense, and complications with the number of pieces cut.
Traditional jamb assemblies often include a door stop that is incorporated in one of the pieces (as shown in the Warren and Longley patents). In these assemblies, each member must be positioned so that the face with the door stop faces into the doorway (and the opposite face is against the wall). This predetermines the orientation of the member and limits its use. Further, the inclusion of a door stop on one of the pieces tends to complicate the shape of the piece and therefore increases production costs.
The Winston patent discloses a jamb assembly that includes two-piece elongate members and a separate door stop. The two pieces are essentially identical and include a longitudinal groove or notch. The door stop has an off-center tongue that mates with one of the grooves. The two pieces of the elongate members are adjustably interconnected by expanding or contracting a gap between the two pieces and then covering the gap with the door stop. To allow for the maximum adjustability, the tongue must be to one side of the door stop. This construction, like the two-piece constructions mentioned above, has problems caused by the two-piece construction of the elongate members. Also, since more pieces are needed, production costs are increased.
Traditional trim is substantially flat on one side and decorative on the other side. The flat side adjoins with the member and the wall to hide any gap therebetween. Examples of this trim may be found in the J. P. Longley patent and the Winston patent.
What is needed then is a jamb assembly that includes elongate members that are strong, simple to make, and economical to produce. Further, the elongate members should be adaptable to accommodate walls of different widths.


Chucks for mounting and retaining semiconductor wafers during processing are described, particularly suited for wafer processing involving total immersion of the wafer-chuck structure in a liquid. Chuck structures are disclosed for preventing or hindering processing chemicals from contacting and contaminating large portions of the underside of the wafer undergoing processing, limiting such chemical contact to readily cleaned, relatively small annular regions on the periphery of the wafer. Embodiments include structures with supplemental gas flows on the underside of the wafer as well as the creation of gas/liquid meniscusci to prevent chemical penetration of the wafer's underside. Methods of processing semiconductor wafers employing such chucks are also described.

The subject matter described herein relates generally to the field of semiconductor device manufacturing, particularly to a chuck for mounting semiconductor wafers during processing and a method of semiconductor processing, and more particularly to a chuck and method of processing that limit unwanted exposure of unprocessed portions of the wafer to processing chemicals while securing the wafer in a manner suitable for noncontact combinatorial wafer processing.
Semiconductor electronic devices are found in virtually every segment of the modern economy. Continual efforts are made to improve such devices, to develop new, better and cheaper devices, to improve the materials used in such devices and to improve manufacturing processes. There is an on-going need in the art for improvements in all aspects related to semiconductor device design, manufacturing and use.
A typical semiconductor device includes numerous different materials, interfaces between materials and subsystems whose electrical, thermal, chemical and mechanical properties affect the overall performance of the device. Different semiconductor materials with different dopants and doping levels are typically present, along with various conductors and insulators, all in various geometric configurations with numerous interfacial regions where such materials come into contact, may blend to form alloys or distinct compounds. Additional complexity can arise from effects of processing. Thus, in designing such devices, or striving to improve the materials and/or manufacturing processes, it is important to know the properties of such materials and interfaces, how such properties are expected to change in response to contemplated changes in materials, geometry and/or processing, and to improve processing equipment and techniques to reduce unwanted exposures of device locations to undesirable chemicals.
Techniques for conducting dozens or even hundreds of experiments in parallel have been developed, and continue to be developed, under the general label "combinatorial processing." These techniques obviously speed up R&D by a tremendous factor, allowing numerous tests to be conducted, and data collected, concurrently. One recent discussion of combinatorial techniques applied to materials science can be found in "Combinatorial Materials Science" by B. Narasimhan et al (eds)., Wiley-Interscience (2007). In particular, various materials, geometries and processing conditions for the manufacture of semiconductor devices can be tested in parallel, exemplified by the specific applications of combinatorial processing to semiconductor devices by Intermolecular, Inc. of San Jose, Calif., employing their High-Productivity Combinatorial™ (HPC™) technology and various devices and procedures related thereto. Such technologies also are known as high-throughput combinatorial technology or combinatorial technology. For economy of language we refer generally to such combinatorial techniques as HPC.
HPC processing typically involves isolating numerous regions on the surface of a semiconductor wafer ("wafer") and processing these isolated regions pursuant to a plurality of different processing protocols. Isolation of these distinct regions has conventionally required the use of a cell that contacts the surface of the wafer, inside which the processing can occur without interference or contamination from other cells. However, contact with the wafer is a dangerous procedure that can easily result in damage to the wafer, or cause particles to be left on the wafer, both of which may affect device performance, especially as semiconductor circuit components become ever smaller and thus more susceptible to small disturbances in or on the wafer. Therefore, noncontact sealing and isolation is an active area of interest in the semiconductor industry.

Chuck for mounting a semiconductor wafer for liquid immersion processing


When a holder of an ID card approaches an image formation instructing device for sending an image forming instruction to an image forming apparatus, an ID code stored in a RF-ID element built in the ID card is read by a RF communication device. When the image formation instructing device transmits an image forming instruction to the image forming apparatus in this condition, an image forming operation is executed and the number of sheets for image formation is counted by counting means. Further, the counted number of sheets for image formation is associated with an ID code having predetermined bearing on the personal ID code read by the RF communication device and thereafter stored and held in a number-of-sheets file. Thus, the number of sheets for image formation is managed without preparing a key counter, a key card, etc. and without special operation.

1. Field of the Invention
The present invention relates to an image forming apparatus such as a copier, a printer or the like, which is capable of managing the number of sheets for image formation.
2. Description of the Related Art
As an image forming apparatus such as a copier, a printer or the like, one has heretofore been known wherein the number of sheets for image formation can be managed for each specific individual or post. For example, the image forming apparatus is provided with a key such as a key counter, a key card or the like inserted therein and attached thereto. When the image forming apparatus is in use, such a key is inserted into and attached thereto so that the operation thereof is allowed. In the case of the key counter, the number of sheets for image formation is set to the key counter itself. In the case of the key card, the number of sheets for image formation is stored in an image forming apparatus or computer to which a reader/writer of the key card is connected.
As the need for managing the number of sheets for image formation for each specific individual or post in the image forming apparatus, the adoption of such a system that each individual or post is charged with an amount corresponding to the number of sheets for image formation is considered. Namely, when one or more image forming apparatuses are used in a plurality of persons or a plurality of posts, respective individuals or posts might be billed according to the amount of their use. Such a case needs to manage the number of sheets for image formation in each image forming apparatus.
Problems of such a prior art will next be explained.
When one attempts to manage the number of sheets for image formation for each specific individual or post, a key counter or a key card is prepared and must be attached to each image forming apparatus. Since it is not realistic that one like the key counter is prepared for each individual in particular, the management of the number of sheets for image formation by the key counter should unavoidably be done in predetermined units such as every posts, etc. Having to take the trouble to prepare these key counter and key card even in the case of the key counter and the key card leads to cumbersomeness in itself. The fact that the key counter or key card must be mounted to the image forming apparatus, is also cumbersome in itself.

System for managing number of sheets for image formation


A system and method for detecting and discriminating atrial arrhythmias based on mechanical signals of cardiac wall motion and electrical signals of cardiac depolarizations. A mechanical event rate determined from sensed mechanical events is used to corroborate an electrical event rate determined from sensed EGM or ECG signals to classify the heart rhythm. If the event rates are not correlated, other parameterized data from the mechanical signal and electrical signal are evaluated to detect evidence of an arrhythmia. If electrical and mechanical event data do not corroborate a common arrhythmia condition, electrical and mechanical sensing parameters may be adjusted.

Implantable cardiac stimulation devices are available for treating cardiac arrhythmias by delivering cardiac stimulation pulses for pacing, cardioverting or defibrillating the heart. Such a device, commonly known as an implantable cardioverter defibrillator or "ICD", senses a patient's heart rhythm and classifies the rhythm according to an arrhythmia detection scheme in order to detect episodes of tachycardia or fibrillation. Arrhythmias detected may include ventricular tachycardia (VT), fast ventricular tachycardia (FVT), ventricular fibrillation (VF), atrial tachycardia (AT) and atrial fibrillation (AT) in addition to bradycardia.
Upon detecting an arrhythmia, the ICD delivers an appropriate therapy. Cardiac pacing is delivered in response to the absence of sensed intrinsic depolarizations, referred to as P-waves in the atrium and R-waves in the ventricle. In response to tachycardia detection, a number of tiered therapies may be delivered beginning with anti-tachycardia pacing therapies and escalating to more aggressive shock therapies until the tachycardia is terminated. Termination of a tachycardia is commonly referred to as "cardioversion." Ventricular fibrillation (VF) is a serious life-threatening condition and is normally treated by immediately delivering high-energy shock therapy. Termination of VF is normally referred to as "defibrillation." With regard to atrial arrhythmias, atrial tachycardia or atrial flutter can be treated with anti-tachycardia pacing therapies, pulse bursts, or a cardioversion shock, and atrial fibrillation is typically treated with pulse bursts or a defibrillation shock.
Reliable ICD performance depends on accurate detection of arrhythmias such that an appropriate therapy may be selected and promptly delivered. Undetected malignant arrhythmias can be fatal, and undetected non-malignant arrhythmias may leave the patient in a hemodynamically compromised state. Inappropriately delivered therapies due to false arrhythmia detections can induce arrhythmias in some patients. It is desirable, therefore, to avoid delivering a therapy due to inappropriate arrhythmia detection. For example, it is undesirable to deliver cardioversion therapy during sinus tachycardia, which is a normal heart rate increase in response to exercise. Furthermore, a cardioversion or defibrillation shock is generally painful to the patient and depletes the battery charge. Therefore, accurate prompt detection of cardiac arrhythmias is critical in the selecting and delivering appropriate arrhythmia therapies.
The most common approach to detecting arrhythmias in implantable automatic cardioverters and defibrillators is based on monitoring sensed event intervals determined from cardiac electrogram (EGM) signals. Monitoring of sensed intervals generally involves identifying the event intervals and event rates as they occur and applying a preset group of criteria, which must be met in order to detect a particular arrhythmia. Criteria for identifying various arrhythmias may all be monitored simultaneously. An arrhythmia detection and classification system generally disclosed in U.S. Pat. No. 5,342,402, issued to Olson et al., incorporated herein by reference in its entirety, uses criteria for sensed events, event intervals, and event rates and is employed in the Medtronic Model 7219 devices. An arrhythmia detection and classification system that employs a prioritized set of inter-related rules for arrhythmia detection is generally disclosed in U.S. Pat. No. 5,545,186, issued to Olson et al., also incorporated herein by reference in its entirety.
The majority of clinical experience in detecting cardiac arrhythmias with regard to implantable automatic cardioverting and defibrillating devices is based on bipolar sensing in the area of the right ventricular apex. New cardiac stimulation therapies and applications, such as cardiac resynchronization therapy, however, may require particular lead locations to achieve targeted stimulation at specific locations. These requirements may counter the optimal location of electrodes for reliable cardiac arrhythmia detection. As the variety of implantable cardiac stimulation devices increases, e.g., devices capable of sensing and stimulating in the left side of the heart with the use of a lead deployed through the coronary sinus or leadless devices implanted in the vicinity of the heart such as in a subaxillary location, the type and reliability of EGM signals available for detecting cardiac arrhythmias may change. Thus, the quality of the EGM signals available for arrhythmia detection may suffer.
Limitations of EGM sensing are well known in the art. Noise in the form of electromagnetic interference, skeletal muscle depolarizations, far-field signals, or polarization artifact following a stimulation pulse can interfere with accurate sensing of intrinsic electrical activity. Oversensing of cardiac activity or noise can result in false detections of cardiac events. Undersensing of cardiac activity can result in missed detections of cardiac events. In either situation, cardiac stimulation therapies may be inappropriately withheld or delivered.
Mechanical sensing of cardiac activity has been proposed for use in cardiac stimulation therapy applications such as optimizing timing intervals during cardiac pacing or monitoring hemodynamic performance. Detection of peak endocardial wall motion in the apex of the right ventricle for optimizing A–V intervals has been validated clinically. A system and method for using cardiac wall motion sensor signals to provide hemodynamically optimal values for heart rate and AV interval are generally disclosed in U.S. Pat. No. 5,549,650 issued to Bornzin, et al. A cardiac stimulating system designed to automatically optimize both the pacing mode and one or more pacing cycle parameters in a way that results in optimization of a cardiac performance parameter, including for example heart accelerations, is generally disclosed in U.S. Pat. No. 5,540,727, issued to Tockman, et al.
An accelerometer-based activity sensor used to provide a signal that corresponds to the acceleration due to the heartbeat of a patient is generally disclosed in U.S. Pat. No. 5,991,661 issued to Park, et al. When the patient is determined to be at rest, the acceleration signal is used to determine parameters indicative of the contractility of the heart and the displacement of the heart during a heartbeat.
Implantable sensors for monitoring heart wall motion have been described or implemented for use in relation to the right ventricle. A sensor implanted in the heart mass for monitoring heart function by monitoring the momentum or velocity of the heart mass is generally disclosed in U.S. Pat. No. 5,454,838 issued to Vallana et al. A catheter for insertion into the ventricle for monitoring cardiac contractility having an acceleration transducer at or proximate the catheter tip is generally disclosed in U.S. Pat. No. 6,077,236 issued to Cunningham. Implantable leads incorporating accelerometer-based cardiac wall motion sensors are generally disclosed in U.S. Pat. No. 5,628,777 issued to Moberg, et al. A device for sensing natural heart acceleration is generally disclosed in U.S. Pat. No. 5,693,075, issued to Plicchi, et al. A system for myocardial tensiometery including a tensiometric element disposed at a location subject to bending due to cardiac contractions is generally disclosed in U.S. Pat. No. 5,261,418 issued to Ferek-Petric et al. All of the above-cited patents are hereby incorporated herein by reference in their entirety.
Thus the use of cardiac wall motion sensors in evaluating cardiac hemodynamic performance is known. The use of the signal from a cardiac wall motion sensor as a primary indicator of potentially malignant cardiac arrhythmias is proposed in the above-cited '361 patent to Moberg. The cardiac wall motion sensor signal may be used with conventional R-wave detection circuitry that relies on an IEGM for measuring cardiac activity. An implantable cardiac stimulating device which uses cardiac displacement signals to detect and discriminate arrhythmias is generally disclosed in U.S. Pat. No. 5,480,412 issued to Mouchawar et al., hereby incorporated herein by reference in its entirety. Cardiac wall acceleration signals provided by a cardiac wall motion sensor are integrated over time to derive cardiac velocity signals, which are further integrated over time to derive cardiac displacement signals.
A need remains, however, for an implantable medical device that is capable of detecting cardiac arrhythmias using mechanical cardiac activity information to augment electrical sensing of cardiac activity and that allows classification of detected arrhythmias for monitoring or therapy selection purposes. An implantable system and algorithm employing both mechanical and electrical cardiac activity information can be used to overcome limitations described that are encountered when relying solely on electrical activity sensing, particularly in newer systems that do not include traditional right ventricular apical EGM sensing.
Furthermore, an implantable medical device capable of evaluating mechanical event signals that allows prompt detection of the transition from hemodynamically stable to hemodynamically unstable arrhythmias is also needed. As indicated above, commercial implementations of lead-based accelerometers have been used in relation to the right ventricle. However, left ventricular wall motion is a more direct correlate to cardiac output than right ventricular wall motion. Therefore, monitoring left ventricular wall motion is expected to be more sensitive in discriminating hemodynamically stable and unstable rhythms.

Use of accelerometer signal to augment ventricular arrhythmia detection


A motor drive device for driving of a plurality of motors in a proper manner, having a first motor, a second motor, and a current controller. The first motor is able to drive at up to a first maximum permissible current of A1. The second motor is able to drive at up to a second maximum permissible current of B1. The power supply supplies up to a maximum permissible supply current of D to the first and second motors. The current controller controls operations of the first and second motors. The maximum permissible supply current of D is set to be less than a sum of A1 and B1. The current controller controls a first current A2 to be supplied to the first motor and a second current B2 to be supplied to the second motor so that a sum of the first and second current A2 and B2 is less than D. The current controller controls the second current B2 to be less than the second maximum permissible current B1.

1. Field of the Invention
The present invention relates to an image-forming device.
2. Description of the Prior Art
It is known in the art to provide a motor drive device that drives a plurality of motors. A problem arises in that the motor drive device determines a current supply to each of the motors. For example, Japanese Patent No. 2905935 discloses a method to restrict an amount of current supplied to a motor when another motor is rotating at a constant speed, thereby preventing excessive current supply from the motor drive device to the motors.
In order to design the device provided with a plurality of motors, problems arise how much amount of current a power supply should supply to the motors. One solution is to design a power supply that is capable of simultaneously driving all of the motors at their own maximum permissible currents. However, if the maximum current supply from the power supply is increased, the size of the power source device becomes larger and the cost thereof becomes expensive.


Apparatus for spatially resolved temperature measurement, comprising at least one optical fiber (4) for spatially resolved temperature measurement, at least one laser light source (1), the light (11) from which can be coupled into the optical fiber (4), wherein those components (12, 12a, 12b) of the light (11) produced by the laser light source (1) which are scattered back in the optical fiber (4) can be coupled out of the optical fiber (4) and detected, modulator means (2) permitting the modulation of the light (11) that is to be coupled into the optical fiber (4), and also demodulator means (5, 6) which permit a demodulation of those components (12, 12a, 12b) of the light (11) which are coupled out of the optical fiber (4), wherein the demodulator means (5, 6) are designed as optical demodulator means (5, 6) and/or wherein the modulator means (2) are designed as optical modulator means (2).

The present invention relates to an apparatus for spatially resolved temperature measurement and to a method for spatially resolved temperature measurement.
Fiber-optic temperature measurement systems (Distributed Temperature Sensing—DTS) can use optical effects in optical fibers for spatially resolved temperature measurement. By way of example, the effect of Raman scattering can be used. This involves the radiation from a narrowband source of electromagnetic radiation (e.g. by way of a laser) being inelastically scattered in the fiber material. The ratio of the intensities of the scattered radiation with a shorter wavelength than the excitation (anti-Stokes scattered radiation) and the scattered radiation at a longer wavelength (Stokes scattered radiation) is temperature dependent and can be used for temperature determination. By using frequency (Optical Frequency-Domain Reflectometry—OFDR (EP0692705, EP0898151)) or pulse techniques (Optical Time-Domain Reflectometry—OTDR), the temperature along the fiber can be determined with spatial resolution. By way of example, such measuring systems can be used for monitoring fires in tunnels and channels, for monitoring power cables and pipelines and for mining oil and gas.
An apparatus and a method of the type cited at the outset are known from EP 0 692 705 A1, for example. In this case, a problem of the spatially resolved temperature measurement in optical fibers is the limited spatial resolution along the fiber.
In the case of pulse techniques, this is determined by the width of the laser pulses and the time resolution of the detection electronics. In the case of frequency techniques, the spatial resolution is limited by the maximum frequency. Known OTDR-DTS setups achieve spatial resolutions in the region of 1 m.
In the OFDR-DTS arrangements known to date, the optical output power of a semiconductor laser is modulated by modulating the laser current. The detection is effected by demodulating or mixing the electrical signals coming from the optical receiver. This may involve the use of homodyne detection (demodulation using the laser frequency) or else heterodyne detection (mixing with a frequency which is shifted in comparison with the laser). Heterodyne detection has the advantage that the downstream amplifiers can be operated in narrowband fashion on a fixed frequency.
Both the electrical laser modulation and the electrical demodulation are limited in terms of frequency.
The laser needs to be modulated using comparatively large currents (approximately 1A). The inductances in the supply lines and also the design of the laser allow the necessary modulation depths to be achieved only up to frequencies in the order of magnitude of 100 MHz.
For detecting the modulated light, photodiodes with transimpedance amplifiers are usually used. With the requisite DC coupling and the necessary gains, it is possible to implement frequencies in the region of 250 MHz.
Electrical modulation of the laser and electrical demodulation of the received signals can be used to achieve spatial resolutions of approximately 0.5 m.
An alternative to distributed temperature measurement in normal optical fibers is the use of Fiber Bragg Gratings (FBGs). Such FBGs can be introduced into optical fibers at short intervals and thus allow temperature measurements at high spatial resolution. However, the technique is very complex (each grating needs to be coded individually) and also allows only isolated measurements.
Numerous industrial applications and applications in the environment require distributed temperature measurements at spatial resolutions of 0.1 m or better. These spatial resolutions cannot be achieved with the known arrangements.

Apparatus and method for spatially resolved temperature measurement


An interferometer has a first reflective surface having a nominal orientation; a second reflective surface having a nominal orientation orthogonal to the nominal orientation of the first reflective surface; a retroreflector facing the first reflective surface; a double polarizing beam splitter (DPBS) between the first reflective surface and the retroreflector; and a respective quarter-wave plate between the DPBS and each of the reflective surfaces. The DPBS has first and second beam-splitting surfaces each having a nominal orientation with respect to the first reflective surface. At least part of at least one of the first reflective surface, the second reflective surface and the beam-splitting surfaces is effectively tilted relative to the respective nominal orientation of such surface, and constitutes a respective tilted surface.

Interferometers are widely used to make precision measurements of displacement. FIG. 1 is a schematic drawing showing an example of a conventional high-stability plane mirror interferometer 10. Interferometer 10 is composed of a polarizing beam splitter (PBS) 20 having a single beam-splitting surface 22, a retroreflector 30, a fixed plane mirror 40, a movable plane mirror 50, a quarter-wave plate 44 and a quarter-wave plate 54. Fixed mirror 40 is in a fixed location relative to PBS 20 and has a plane reflective surface 42. Movable mirror 50 is affixed to a body (not shown) whose displacement is to be measured using interferometer 10 and has a plane reflective surface 52. The reflective surface 52 of movable mirror 50 is oriented orthogonally to the reflective surface 42 of fixed mirror 40 and to the direction of motion 56 of movable mirror 50.
PBS 20 is located such that the center of beam-splitting surface 22 is located at a point where a normal to the reflective surface 42 of fixed mirror 40 intersects with a normal to the reflective surface 52 of movable mirror 50. In the example shown, PBS 20 is oriented such that beam-splitting surface 22 is oriented at 450 with respect to the reflective surface 42 of fixed mirror 40. Other orientations of beam-splitting surface 22 are possible. Beam-splitting surface 22 reflects s-polarized light and transmits p-polarized light.
Quarter-wave plate 44 is interposed between PBS 20 and movable mirror 40. Quarter-wave plate 54 is interposed between PBS 20 and movable mirror 50. The surfaces of each quarter-wave plate are oriented parallel to the reflective surface of the respective mirror. Retroreflector 30 is located on the other side of PBS 20 from fixed mirror 40 and faces the fixed mirror. Retroreflector 30 is shown throughout this disclosure as a two-dimensional retroreflector, i.e., a prism, to simplify the drawings. More, typically, retroreflector 30 is a three-dimensional retroreflector, such as a corner cube.
FIG. 1 shows PBS 20, fixed mirror 40 and quarter-wave plates 44 and 54 as separate components to enable these components to be shown clearly. In embodiments in which PBS 20 is configured as a cube having a plane cube surface 24 and a plane cube surface 25 oriented at −45° and +45°, respectively, relative to beam-splitting surface 22, as exemplified in FIG. 1, quarter-wave plates 44 and 54 are affixed to plane cube surfaces 24 and 25, respectively. Additionally, fixed mirror 40 is typically embodied as a reflective layer deposited on the surface of quarter-wave plate 44 remote from cube surface 24.
FIG. 1 additionally shows retroreflector 30 juxtaposed with a cube surface 26 of PBS 20. Cube surface 26 is opposite cube surface 24. Retroreflector 30 may alternatively be spaced from cube surface 26.
A light source 60 is arranged to illuminate the beam-splitting surface 22 of PBS 20 with an incident beam 62 of light whose direction is orthogonal to the reflective surface 52 of movable mirror 50. Incident light beam 62 is composed of a first component having a first polarization and a first frequency and a second component having a second polarization and a second frequency. The first and second frequencies typically differ by a difference that typically ranges from a few MHz to a few tens of MHz. Light source 60 typically comprises a laser (not shown), typically a helium-neon laser.
A measurement beam 72 and a reference beam 74 derived by interferometer 10 from incident light beam 62 emerge from PBS 20 and illuminate a light sensor 70. Sensor 70 generates an electrical signal in response to the measurement beam and the reference beam.
Incident beam 62 is emitted by light source 60 at a location A and is incident at a location B on the beam-splitting surface 22 of PBS 20. The s-polarized component of incident beam 62 is reflected by beam-splitting surface 22 at location B and constitutes a reference beam 72. Reference beam 72 passes through quarter-wave plate 44 and is incident at a location C on the reflective surface 42 of fixed mirror 40.
After the first reflection by fixed mirror 40, reference beam 72 returns along a reciprocal path towards PBS 20. Reference beam 72 passes through quarter-wave plate 44 and is incident at a location D on beam-splitting surface 22. Location D is coincident with location B, described above. Letters indicating nominally-coincident locations are separated by commas in the Figures. Two passes through the quarter-wave plate change reference beam 72 from s-polarized to p-polarized. Consequently, beam-splitting surface 22 transmits the reference beam towards retroreflector 30.
Retroreflector 30 reflects reference beam 72 at locations E and F, after which the reference beam returns to PBS 20 along a path that is parallel to, but offset from, the path of the reference beam between locations D and E. Reference beam 72 is incident on the beam-splitting surface 22 of PBS 20, this time at a location G. Beam-splitting surface 22 transmits reference beam 72 towards fixed mirror 40. Reference beam 72 passes once more through quarter-wave plate 44, and is incident on the reflective surface 42 of fixed mirror 40 at a location H.
After the second reflection by fixed mirror 40, reference beam 72 returns along a reciprocal path towards PBS 20. Reference beam 72 passes through quarter-wave plate 44 a final time and is incident at a location I on the beam-splitting surface 22 of PBS 20. Location I is coincident with location G, described above. The final pass through quarter-wave plate 44 restores reference beam 72 to s-polarized. Consequently, beam-splitting surface 22 reflects reference beam 72, and the reference beam emerges from PBS 20 and is incident on sensor 70 at a location J.
The p-polarized component of incident beam 62 is also incident at location B on the beam-splitting surface 22 of PBS 20. The beam-splitting surface transmits the p-polarized component of incident beam 62 towards movable mirror 50 as a measurement beam 74. Measurement beam 74 passes through quarter-wave plate 54 and is incident at a location K on the reflective surface 52 of movable mirror 50.
After the first reflection by movable mirror 50, measurement beam 74 returns along a reciprocal path towards PBS 20. Measurement beam 74 passes again through quarter-wave plate 54 and is incident at a location L on beam-splitting surface 22. Location L is coincident with locations B and D, described above. Two passes through the quarter-wave plate 54 change measurement beam 74 from p-polarized to s-polarized. Consequently, beam-splitting surface 22 reflects measurement beam 74 towards retroreflector 30.
Retroreflector 30 reflects measurement beam 74 at locations M and N, which are coincident with locations E and F, respectively. Measurement beam 74 then returns to PBS 20, where it is once more incident on the beam-splitting surface 22 of PBS 20, this time at a location O. Location is coincident with locations G and I, described above. Beam-splitting surface 22 reflects measurement beam 74 towards movable mirror 50. Measurement beam 74 passes through quarter-wave plate 54 a third time, and is incident on the reflective surface 52 of movable mirror 50 at a location P.
After the second reflection by movable mirror 50, measurement beam 74 returns along a reciprocal path towards PBS 20. Measurement beam 74 passes a fourth time through the quarter-wave plate 54 and is incident at a location Q on the beam-splitting surface 22 of PBS 20. Location Q is coincident with locations G, I and O, described above. The final pass through quarter-wave plate 54 restores measurement beam 74 to p-polarized. Consequently, beam-splitting surface 22 transmits measurement beam 74, and the measurement beam emerges from PBS 20 and is incident on sensor 70 at a location R.
Location R is coincident with location J. Consequently, measurement beam 74 is nominally superposed with reference beam 72, and the beam axes of reference beam 72 and measurement beam 74 are parallel and coincident. Note that if fixed mirror 40 and movable mirror 50 are not ideally aligned, i.e., the mirrors are not perfectly orthogonal, the beam axes remain parallel, but one beam axis is spatially offset from the other.
Sensor 70 electrically detects the superposed light beams 72 and 74 to generate an electrical signal that includes a signal component generated by the sensor in response to interference between light beams 72, 74. This electrical signal component will be referred throughout this disclosure as a desired interference component. The amplitude of the desired interference component depends in part on two main factors, namely, the angle between the beam axes of light beams 72 and 74 and the distance between the beam axes of the light beams. The amplitude of the desired interference component is maximized when the beam axes of light beams 72 and 74 are parallel. The amplitude of the desired interference component generated in response to interference between two light beams, such as reference beam 72 and measurement beam 74, having a Gaussian intensity distribution falls off approximately as exp(−(2w/d)2), where d is the diameter of the beams, and w is the spatial separation between the beam axes of the beams, i.e., the spatial separation between the beam axis of reference beam 72 and the beam axis of measurement beam 74. In interferometer 10, spatial separation w is approximately 4Lθ, where L is approximately equal to the distance from the apex of retroreflector 30 to fixed mirror 40, and θ is the angle between fixed mirror 40 and an ideally-aligned fixed mirror 40, i.e., a fixed mirror 40 that is oriented exactly orthogonally with respect to movable mirror 50.
Imperfections in one of more of the components of a conventional interferometer, such as interferometer 10 shown in FIG. 1, typically subject the interferometer to ghost beams. FIGS. 2A and 2B are schematic drawings showing examples of ghost beams to which conventional interferometer 10 is typically subject. Examples of imperfections in one or more of the components of the interferometer are reflections at the cube surfaces 24, 26 of PBS 20, reflections at the surfaces of quarter-wave plates 44 and 54, transmittal of s-polarized light and reflection of p-polarized light at beam-splitting surface 22, and retroreflector 30 having imperfect polarization properties. FIG. 2A shows a ghost beam that originates as the result of reference beam 72 incident on beam-splitting surface 22 comprising an unwanted s-polarized component. This ghost beam will be referred to a ghost reference beam 82. FIG. 2B shows a ghost beam that originates as a result of measurement beam 74 comprising an unwanted p-polarized component. This ghost beam will be referred to a ghost measurement beam 84. Other ghost beams are possible.
FIG. 2A shows the path of ghost reference beam 82. Ghost reference beam 82 is a result of reference beam 72 incident at location G on the beam-splitting surface 22 of PBS 20 comprising an unwanted s-polarized component, typically due to retroreflector 30 having non-ideal polarization properties. Beam-splitting surface 22 reflects the s-polarized component as ghost reference beam 82.
Beam-splitting surface 22 reflects ghost reference beam 82 towards movable mirror 50. Ghost reference beam 82 is incident at a location S on the reflective surface 52 of movable mirror 50. Location S is coincident with location P, described above.
After reflection once by fixed mirror 40 and once by movable mirror 50, ghost reference beam 82 returns along a reciprocal path towards PBS 20. Ghost reference beam 82 passes a second time through quarter-wave plate 52 and is incident at a location T on the beam-splitting surface 22 of PBS 20. Location T is coincident with locations G, I, O and Q, described above. Passing twice through quarter-wave plate 54 twice changes ghost reference beam 82 to p-polarized. Consequently, beam-splitting surface 22 transmits ghost reference beam 82, and the ghost reference beam emerges from PBS 20 superposed with the desired beams, i.e., reference beam 72 and measurement beam 74. Ghost reference beam 82 is incident on sensor 70 at a location U, which is coincident with locations J and R. The beam axis of ghost reference beam 82 is parallel to and coincident with the beam axes of desired beams 72, 74. Consequently, ghost reference beam 82 interferes strongly with desired beams 72, 74 at the sensor.
Between light source 60 and sensor 70, ghost reference beam 82 is reflected once by fixed mirror 40 and once by movable mirror 50, whereas reference beam 72 is reflected twice by fixed mirror 40 and measurement beam 74 is reflected twice by movable mirror 50. Consequently, a given displacement of movable mirror 50 subjects ghost reference beam 82 to a phase change equal to one half of the phase change to which the same displacement of the movable mirror subjects measurement beam 74. Interference between ghost reference beam 82 and the desired beams 72, 74 imposes a cyclic error term with a period of λ/2, where λ is the nominal wavelength of the light output by light source 60, on the electrical signal generated by sensor 70. In other words, when movable mirror 50 is displaced by a distance equal to λ/2, ghost reference beam 82 imposes a full cycle of an approximately sinusoidal error on the electrical signal generated by sensor 70.
FIG. 2B shows the path of ghost measurement beam 84. Ghost measurement beam 84 is a result of measurement beam 74 incident at location O on beam-splitting surface 22 comprising an unwanted p-polarized component, typically due to retroreflector 30 having non-ideal polarization properties. Beam-splitting surface 22 transmits the p-polarized component of the measurement beam towards fixed mirror 40 as a ghost measurement beam 84.
Beam-splitting surface 22 transmits ghost measurement beam 84 towards fixed mirror 40. Ghost measurement beam 84 passes through quarter-wave plate 44 and is incident at a location V on the reflective surface 42 of fixed mirror 40. Location V is coincident with location H, described above.
After reflection once by movable mirror 50 and once by fixed mirror 40, ghost measurement beam 84 returns along a reciprocal path towards PBS 20. Ghost measurement beam passes a second time through quarter-wave plate 44 and is incident at a location W on the beam-splitting surface 22 of PBS 20. Location W is coincident with locations G, I, O and Q, described above. Passing through quarter-wave plate 44 twice changes ghost measurement beam 84 to s-polarized. Consequently, beam-splitting surface 22 reflects ghost measurement beam 84, and the ghost measurement beam emerges from PBS 20 superposed with the desired beams, i.e., reference beam 72 and measurement beam 74. Ghost measurement beam 84 is incident on sensor 70 at a location X, which is coincident with locations J and R. The beam axis of ghost measurement beam 84 is parallel to and coincident with the beam axes of desired beams 72, 74. Consequently, ghost beam 84 interferes strongly with desired beams 72, 74 at the sensor.
Between light source 60 and sensor 70, ghost measurement beam 84 is reflected once by fixed mirror 40 and once by movable mirror 50, whereas reference beam 72 is reflected twice by fixed mirror 40 and measurement beam 74 is reflected twice by movable mirror 50. Consequently, a given displacement of movable mirror 50 subjects ghost measurement beam to a phase change equal to one half of the phase change to which the same displacement of the movable mirror subjects measurement beam 74. Interference between ghost measurement beam 84 and the desired beams 72, 74 imposes a cyclic error term with a period of λ/2, where λ is the nominal wavelength of the light output by light source 60, on the electrical signal generated by sensor 70. In other words, when movable mirror 50 is displaced by a distance equal to λ/2, ghost measurement beam 84 imposes a full cycle of an approximately sinusoidal error on the electrical signal generated by sensor 70.
It is known in the art that the effect of ghost beams such as ghost reference beam 82 and ghost measurement beam 84 can be mitigated by tilting one or more of the surfaces of the interferometer at which light is reflected. Light reflected by such tilted reflective surface is neither parallel to nor orthogonal to the direction of incident light beam 62. Reflective surfaces that can be tilted include the reflective surface 42 of fixed mirror 40, the reflective surface 52 of movable mirror 50 and the beam-splitting surface 22 of PBS 20. The reflective surface of each mirror can be tilted such that the reflective surface is no longer orthogonal to the reflective surface of the other mirror. Beam-splitting surface 22 can be tilted such that it is oriented at an angle different from 45° to the normal to the reflective surface of each of the mirrors 40, 50. More than one of the above-mentioned reflective surfaces may be tilted.
Tilting one or more of the reflective surfaces of interferometer 10 mitigates the effect of ghost beams 82, 84 by causing the ghost beams to emerge from PBS 20 with their beam axes diverging from those of the desired beams, i.e., reference beam 72 and measurement beam 74. Consequently, at sensor 70, the beam axes of ghost beams 82, 84 diverge from those of desired beams 72, 74 and the beam axes of the ghost beams are spatially offset from those of the desired beams. The spatial offset of the beam axes of ghost beams 82, 84 from those of desired beams 72, 74 and the beam axes of ghost beams 82, 84 diverging from those of desired beams 72, 74 significantly reduce the level of the component of the electrical signal generated by sensor 70 in response to interference between ghost beams 82 and 84 on one hand and desired beams 72, 74 on the other hand.
However, tilting one or more of the reflective surfaces of interferometer 10 additionally introduces a spatial offset between the beam axes of reference beam 72 and measurement beam 74 as these beams emerge from PBS 20, even though the beam axes of reference beam 72 and measurement beam 74 typically remain parallel. The spatial offset between the beam axes of reference beam 72 and measurement beam 74 at sensor 70 undesirably reduces the amplitude of the desired interference signal, i.e., the component in the electrical signal generated by sensor 70 in response to interference between desired beams 72, 74. Thus, compared with an interferometer such as interferometer 10 having no tilted reflective surface, the desired interference component generated by an interferometer having at least one tilted reflective surface has a reduced amplitude and, hence, a reduced signal-to-noise ratio. This impairs the accuracy of the displacement measurements made using such interferometer.
What is needed, therefore, is an interferometer in which the effect of ghost beams is mitigated in a way does not degrade the signal-to-noise ratio of the desired interference component of the electrical signal generated by the sensor.

Interferometer with Double Polarizing Beam Splitter


In an electric-mileage learning when a running mode of a plug-in hybrid vehicle is a CD mode, acquisition of information for the electric-mileage learning is not performed in the case where the running mode is changed from the CD mode to a CS mode during one trip even when the running mode is changed to the CD mode afterward. The electric-mileage learning is performed by calculating a trip electric mileage using only information acquired in the CD mode before a change to the CS mode for the first time. This avoids inclusion of an error caused by running on the uphill road in the CS mode in a learned electric mileage even when the running is performed. This enhances the accuracy of the learned electric mileage, thus accurately calculating a possible EV running distance.

In recent years, from the viewpoint of environmental protection, emission reduction of exhaust gas from an internal combustion engine (hereinafter referred to as "engine" in some cases) mounted on a vehicle and improvement in fuel consumption rate (fuel consumption) are desired. As a vehicle that satisfies these requirements, a hybrid vehicle on which a hybrid system is mounted has been put into practical use. The hybrid vehicle includes an engine such as a gasoline engine and a diesel engine and a running motor (for example, constituted by a motor-generator or a motor). The running motor is driven by electric power generated due to the output of the engine or by electric power stored in a running battery. The hybrid vehicle runs using one or both of the engine and the running motor as a running drive-force source.
In recent years, a hybrid vehicle (what is called a plug-in hybrid vehicle) that can charge the running battery for supplying electric power to the running motor by electric power from a power supply (outside power supply) outside of the vehicle, for example, a household power supply is being developed.
This plug-in hybrid vehicle is designed on the assumption of running preferentially using the electric power from the running battery, in order to significantly improve the fuel consumption rate. For example, as disclosed in Patent Literature 1 and Patent Literature 2 below, the running mode of the plug-in hybrid vehicle is set to a mode (generally referred to as "charge depleting (CD) mode" or "electric vehicle (EV) mode") that preferentially performs running using the power of the running motor alone until the electricity storage amount in the running battery is reduced up to a predetermined value. The running mode transitions to a mode (generally referred to as "charge sustain (CS) mode" or "hybrid vehicle (HV) mode") that preferentially performs running using both powers of the engine and the running motor when the electricity storage amount in the running battery becomes less than the predetermined value.
In this plug-in hybrid vehicle, for running with the power of the running motor alone in the CD mode, the possible running distance with the current electricity storage amount (remaining electricity storage amount) in the running battery is calculated and this information is displayed on a meter panel (instrument panel). More specifically, the electric mileage is calculated from the running condition in the past (relationship between the amount of electric power consumption and the running distance) (electric-mileage learning is performed). This electric mileage is a running distance per unit electric energy. Subsequently, this electric mileage is multiplied by the electricity storage amount (the electric energy that can be used until the electricity storage amount reaches the predetermined value at which the mode transitions to the CS mode) in the running battery, so as to calculate the possible running distance.
The following Patent Literature 3 discloses that, in the case where EV running (running using the power of the running motor alone) is performed, the electric energy required for this EV running and the usable electric energy are compared with each other to calculate a possible EV running distance so as to determine to continue the EV running or cause the transition to HV running (running using both powers of the engine and the running motor).