Provided is a method for producing an optical compensating film, which comprises stretching a cellulose acetate film, the cellulose acetate film having a water content of 2.0 to 20.0% by weight, wherein the cellulose acetate for the film has an acetyl value of from 57.0% to 62.5%.

A liquid crystal display generally comprises at least a liquid crystal cell, a polarizing plate and an optical compensating sheet (phase retarder plate). Concretely, a transmission liquid crystal display comprises two polarizing plates disposed on both sides of a liquid crystal cell therein, and one or two optical compensating sheets sandwiched between the liquid crystal cell and the polarizing plate. A reflection liquid crystal display comprises a reflector, a liquid crystal cell, one optical compensating sheet and one polarizing plate that are arrayed in that order.
The liquid crystal cell in such displays generally comprises rod liquid-crystalline molecules, two substrates for sealing up them, and an electrode layer for applying voltage to the rod liquid-crystalline molecules. Various display modes of liquid crystal cells are proposed, depending on the difference in orientation of the rod liquid-crystalline molecules in the cells. For example, TN (twisted nematic)-mode cells, IPS (in-plane switching)-mode cells, FLC (ferroelectric liquid crystal)-mode cells, OCB (optically compensatory bend)-mode cells, STN (super twisted nematic)-mode cells and VA (vertically aligned)-mode cells are for transmission displays; and HAN (hybrid aligned nematic)-mode cells are for reflection displays.
The polarizing plate generally comprises a polarizing film and a transparent protective film, and the polarizing film is generally prepared by dipping a polyvinyl alcohol film in an aqueous solution of iodine or dichromatic dye followed by monoaxially stretching the thus-dipped film. Two transparent protective film are attached to both sides of the polarizing film to construct the polarizing plate.
Optical compensating sheets are used in various liquid crystal displays for solving a problem of image discoloration and for enlarging the field of view.
Of those, λ/4 plates have many applications, for example, for optical compensating films for liquid crystal displays, and antireflection films for organic EL displays, and they are now in practical use. However, many λ/4 plates heretofore used in the art attain λ/4 or λ/2 only in a specific wavelength range.
JP-A 27118/1993 and 27119/1993 disclose an optical compensating film fabricated by laminating a birefringent film of large retardation and a birefringent film of small retardation in such a manner that their optical axes cross each other at right angles. The compensating film could theoretically function as a λ/4 plate in the overall range of visible light, so far as the difference in retardation between the laminated two films is λ/4 in the overall range of visible light. JP-A 68816/1998 discloses an optical compensating film capable of attaining λ/4 in a broad wavelength range, which is fabricated by laminating a polymer film of λ/4 in a specific wavelength range and a polymer film of λ/2 of the same material in the same wavelength range as that of the former. JP-A 90521/1998 also discloses an optical compensating film fabricated by laminating two polymer films and capable of attaining λ/4 in a broad wavelength range. However, the optical compensating film of the type fabricated by laminating two films has various problems in that it is thick and its cost is high. Therefore, an optical compensating film of a single film that realizes λ/4 in a broad wavelength range is desired.
In this connection, JP-A 2000-137116 and WO 00/65384 have a description relating to an optical compensating film of a single polymer film of which the phase retarder reduces in a shorter wavelength range, and to its application to circularly polarizing plates and reflection liquid crystal displays. As the parameter of controlling the view angle characteristic of the above-mentioned λ/4 plate, employed is a numerical value defined by (nx−nz)/(nx−ny) (this is hereinafter referred to as an NZ factor). nx, ny and nz indicate the refractive index along the slow axis in plain (the maximum refractive index in plain) of the phase retarder, the refractive index perpendicular to the slow axis in plane of the phase retarder, and the refractive index along the thickness direction, respectively. WO 00/65384 says that the preferred range of the NZ factor is 1≦NZ≦2.
Preferably, the NZ factor is controllable. This is because, in a liquid crystal display for image formation, the birefringence (Δn) of the liquid crystal cell varies depending on the liquid crystal panel therein and the angle-dependency of Δn also varies depending on the liquid crystal panel. Therefore, if the NZ factor of the optical compensating film in the display is controllable, the view angle characteristic of the display can be optimized, requiring no change of the retardation value Re of the film.
However, the NZ factor is defined by the refractive indices in three directions of the film, and is therefore correlated with the draw ratio of the film. Concretely, when the draw ratio of the film in the machine direction increases more and therefore the film is most likely in monoaxial orientation, then the NZ factor of the film comes nearer to 1 from a larger value. In case where a λ/4 plate is fabricated according to the width-unlimited monoaxial stretching method described in the Examples in WO 00/65384, the draw ratio of the film that realizes a retardation of λ/4 is determined by the elongation at break of the film, and therefore the NZ factor of the film shall be indiscriminately determined.

Method for producing optical compensating film, optical compensating film, circularly polarizing plate, and liquid crystal display


A wireless communications device is provided with a storage unit and a processor. The storage unit is configured to store signal strengths and throughputs of a plurality of Access Points (APs) which the wireless communications device was previously or is currently connected to. The processor is configured to update the stored signal strength and throughput of the currently connected AP, and scan for available APs nearby in response to detecting a low-throughput condition of the currently connected AP.

Field of the Invention
The invention generally relates to network selections in the field of wireless communications, and more particularly, to apparatuses and methods for Wireless-Fidelity (WiFi) network selection.
Description of the Related Art
With growing demand for ubiquitous computing and networking, various wireless technologies have been developed, and among all these wireless technologies, the Wireless Fidelity (WiFi), based on the IEEE 802.11 standards, is a Wireless Local Area Network (WLAN) technology which is widely adopted and very popular for the advantages of low cost/effort and high bandwidth. A WiFi network is typically implemented as an extension to wired Local Area Networks (LANs) and is able to provide the last few meters of connectivity between a wired network and mobile or fixed devices. For example, by establishing a WiFi network in the office environment, network resources, such as printers, file servers, modem banks, e-mail servers, etc., may be shared among the employees, while maintaining the distributed computing power for employees or workstation computers. To an increasing extent, the benefits of establishing a WiFi network are now available for the household environment as well.
More than often, a mobile device may detect several Access Points (APs) in an area. Mobile services may be obtained after connecting to one of the detected APs automatically or by user selection. However, the mobile device generally switches from a currently connected AP to another AP only when the connection to the currently connected AP is lost. Also, the mobile device will stay with the same AP, regardless of whether the throughput of the AP becomes poor and whether there may be other APs available with higher throughputs. As a result, the mobile device may not maintain an acceptable throughput from the currently connected AP, and a user may experience serious delays with the wireless services.

Apparatuses and methods for wireless fidelity (WiFi) network selection


The present invention relates to compounds useful as inhibitors of ion channels. The invention also provides pharmaceutically acceptable compositions comprising the compounds of the invention and methods of using the compositions in the treatment of various disorders.

Na channels are central to the generation of action potentials in all excitable cells such as neurons and myocytes. They play key roles in excitable tissue including brain, smooth muscles of the gastrointestinal tract, skeletal muscle, the peripheral nervous system, spinal cord and airway. As such they play key roles in a variety of disease states such as epilepsy (See, Moulard, B. and D. Bertrand (2002) "Epilepsy and sodium channel blockers" Expert Opin. Ther. Patents 12(1): 85-91)), pain (See, Waxman, S. G., S. Dib-Hajj, et al. (1999) "Sodium channels and pain" Proc Natl Acad Sci U.S.A. 96(14): 7635-9 and Waxman, S. G., T. R. Cummins, et al. (2000) "Voltage-gated sodium channels and the molecular pathogenesis of pain: a review" J Rehabil Res Dev 37(5): 517-28), myotonia (See, Meola, G. and V. Sansone (2000) "Therapy in myotonic disorders and in muscle channelopathies" Neurol Sci 21(5): S953-61 and Mankodi, A. and C. A. Thornton (2002) "Myotonic syndromes" Curr Opin Neurol 15(5): 545-52), ataxia (See, Meisler, M. H., J. A. Kearney, et al. (2002) "Mutations of voltage-gated sodium channels in movement disorders and epilepsy" Novartis Found Symp 241: 72-81), multiple sclerosis (See, Black, J. A., S. Dib-Hajj, et al. (2000) "Sensory neuron-specific sodium channel SNS is abnormally expressed in the brains of mice with experimental allergic encephalomyelitis and humans with multiple sclerosis" Proc Natl Acad Sci U.S.A. 97(21): 11598-602, and Renganathan, M., M. Gelderblom, et al. (2003) "Expression of Na(v)1.8 sodium channels perturbs the firing patterns of cerebellar purkinje cells" Brain Res 959(2): 235-42), irritable bowel (See, Su, X., R. E. Wachtel, et al. (1999) "Capsaicin sensitivity and voltage-gated sodium currents in colon sensory neurons from rat dorsal root ganglia" Am J Physiol 277(6 Pt 1): G1180-8, and Laird, J. M., V. Souslova, et al. (2002) "Deficits in visceral pain and referred hyperalgesia in Nav1.8 (SNS/PN3)-null mice" J Neurosci 22(19): 8352-6), urinary incontinence and visceral pain (See, Yoshimura, N., S. Seki, et al. (2001) "The involvement of the tetrodotoxin-resistant sodium channel Na(v)1.8 (PN3/SNS) in a rat model of visceral pain" J Neurosci 21(21): 8690-6), as well as an array of psychiatry dysfunctions such as anxiety and depression (See, Hurley, S. C. (2002) "Lamotrigine update and its use in mood disorders" Ann Pharmacother 36(5): 860-73).
Voltage gated Na channels comprise a gene family consisting of 9 different subtypes (NaV1.1-NaV1.9). As shown in Table A below these subtypes show tissue specific localization and functional differences (See, Goldin, A. L. (2001) "Resurgence of sodium channel research" Annu Rev Physiol 63: 871-94). Three members of the gene family (NaV1.8, 1.9, 1.5) are resistant to block by the well-known Na channel blocker TTX, demonstrating subtype specificity within this gene family. Mutational analysis has identified glutamate 387 as a critical residue for TTX binding (See, Noda, M., H. Suzuki, et al. (1989) "A single point mutation confers tetrodotoxin and saxitoxin insensitivity on the sodium channel II" FEBS Lett 259(1): 213-6).
TABLE ANaisoformTissueTTX IC50IndicationsNaV1.1CNS, PNS10nMPain, Epilepsy,soma ofneurodegenerationneuronsNaV1.2CNS, high in10nMNeurodegenerationaxonsEpilepsyNaV1.3CNS,15nMPainembryonic,injured nervesNaV1.4Skeletal25nMMyotoniamuscleNaV1.5Heart2μMArrhythmia,long QTNaV1.6CNS6nMPain, movement disorderswidespread,most abuntantNaV1.7PNS, DRG,25nMPain, NeuroendocrineterminalsdisordersneuroendocrineNaV1.8PNS, small>50μMPainneurons inDRG & TGNaV1.9PNS, small1μMPainneurons inDRG & TG(Abbreviations: CNS = central nervous system, PNS = peripheral nervous sytem, DRG = dorsal root ganglion, TG = Trigeminal ganglion):
In general, voltage-gated sodium channels (NaVs) are responsible for initiating the rapid upstroke of action potentials in excitable tissue in nervous system, which transmit the electrical signals that compose and encode normal and aberrant pain sensations. Antagonists of NaV channels can attenuate these pain signals and are useful for treating a variety of pain conditions, including but not limited to acute, chronic, inflammatory, and neuropathic pain. Known NaV antagonists, such as TTX, lidocaine (See, Mao, J. and L. L. Chen (2000) "Systemic lidocaine for neuropathic pain relief" Pain 87(1): 7-17.) bupivacaine, phenytoin (See, Jensen, T. S. (2002) "Anticonvulsants in neuropathic pain: rationale and clinical evidence" Eur J Pain 6 (Suppl A): 61-8), lamotrigine (See, Rozen, T. D. (2001) "Antiepileptic drugs in the management of cluster headache and trigeminal neuralgia" Headache 41 Suppl 1: S25-32 and Jensen, T. S. (2002) "Anticonvulsants in neuropathic pain: rationale and clinical evidence" Eur J Pain 6 (Suppl A): 61-8.), and carbamazepine (ee Backonja, M. M. (2002) "Use of anticonvulsants for treatment of neuropathic pain" Neurology 59(5 Suppl 2): S14-7), have been shown to be useful attenuating pain in humans and animal models.
Hyperalgesia (extreme sensitivity to something painful) that develops in the presence of tissue injury or inflammation reflects, at least in part, an increase in the excitability of high-threshold primary afferent neurons innervating the site of injury. Voltage sensitive sodium channels activation is critical for the generation and propagation of neuronal action potentials. There is a growing body of evidence indicating that modulation of NaV currents is an endogenous mechanism used to control neuronal excitability (See, Goldin, A. L. (2001) "Resurgence of sodium channel research" Annu Rev Physiol 63: 871-94.). Several kinetically and pharmacologically distinct voltage-gated sodium channels are found in dorsal root ganglion (DRG) neurons. The TTX-resistant current is insensitive to micromolar concentrations of tetrodotoxin, and displays slow activation and inactivation kinetics and a more depolarized activation threshold when compared to other voltage-gated sodium channels. TTX-resistant sodium currents are primarily restricted to a subpopulation of sensory neurons likely to be involved in nociception. Specifically, TTX-resistant sodium currents are expressed almost exclusively in neurons that have a small cell-body diameter; and give rise to small-diameter slow-conducting axons and that are responsive to capsaicin. A large body of experimental evidence demonstrates that TTX-resistant sodium channels are expressed on C-fibers and are important in the transmission of nociceptive information to the spinal cord.
Intrathecal administration of antisense oligo-deoxynucleotides targeting a unique region of the TTX-resistant sodium channel (NaV1.8) resulted in a significant reduction in PGE2-induced hyperalgesia (See, Khasar, S. G., M. S. Gold, et al. (1998) "A tetrodotoxin-resistant sodium current mediates inflammatory pain in the rat" Neurosci Lett 256(1): 17-20). More recently, a knockout mouse line was generated by Wood and colleagues, which lacks functional NaV1.8. The mutation has an analgesic effect in tests assessing the animal's response to the inflammatory agent carrageenan (See, Akopian, A. N., V. Souslova, et al. (1999) "The tetrodotoxin-resistant sodium channel SNS has a specialized function in pain pathways" Nat Neurosci 2(6): 541-8.). In addition, deficit in both mechano- and thermoreception were observed in these animals. The analgesia shown by the Nav1.8 knockout mutants is consistent with observations about the role of TTX-resistant currents in nociception.
Immunohistochemical, in-situ hybridization and in-vitro electrophysiology experiments have all shown that the sodium channel NaV1.8 is selectively localized to the small sensory neurons of the dorsal root ganglion and trigeminal ganglion (See, Akopian, A. N., L. Sivilotti, et al. (1996) "A tetrodotoxin-resistant voltage-gated sodium channel expressed by sensory neurons" Nature 379(6562): 257-62.). The primary role of these neurons is the detection and transmission of nociceptive stimuli. Antisense and immunohistochemical evidence also supports a role for NaV1.8 in neuropathic pain (See, Lai, J., M. S. Gold, et al. (2002) "Inhibition of neuropathic pain by decreased expression of the tetrodotoxin-resistant sodium channel, NaV1.8" Pain 95(1-2): 143-52, and Lai, J., J. C. Hunter, et al. (2000) "Blockade of neuropathic pain by antisense targeting of tetrodotoxin-resistant sodium channels in sensory neurons" Methods Enzymol 314: 201-13.). NaV1.8 protein is upregulated along uninjured C-fibers adjacent to the nerve injury. Antisense treatment prevents the redistribution of NaV1.8 along the nerve and reverses neuropathic pain. Taken together the gene-knockout and antisense data support a role for NaV1.8 in the detection and transmission of inflammatory and neuropathic pain.
In neuropathic pain states there is a remodeling of Na channel distribution and subtype. In the injured nerve, expression of NaV1.8 and NaV1.9 are greatly reduced whereas expression of the TTX sensitive subunit NaV1.3 is 5-10 fold upregulated (See, Dib-Hajj, S. D., J. Fjell, et al. (1999) "Plasticity of sodium channel expression in DRG neurons in the chronic constriction injury model of neuropathic pain." Pain 83(3): 591-600.) The timecourse of the increase in NaV1.3 parallels the appearance of allodynia in animal models subsequent to nerve injury. The biophysics of the NaV1.3 channel is distinctive in that it shows very fast repriming after inactivation following an action potential. This allows for sustained rates of high firing as is often seen in the injured nerve (See, Cummins, T. R., F. Aglieco, et al. (2001) "Nav1.3 sodium channels: rapid repriming and slow closed-state inactivation display quantitative differences after expression in a mammalian cell line and in spinal sensory neurons" J Neurosci 21(16): 5952-61.). NaV1.3 is expressed in the central and peripheral systems of man. NaV1.9 is similar to NaV1.8 as it is selectively localized to small sensory neurons of the dorsal root ganglion and trigeminal ganglion (See Fang, X., L. Djouhri, et al. (2002). "The presence and role of the tetrodotoxin-resistant sodium channel Na(v)1.9 (NaN) in nociceptive primary afferent neurons." J Neurosci 22(17): 7425-33.). It has a slow rate of inactivation and left-shifted voltage dependence for activation (See, Dib-Hajj, S., J. A. Black, et al. (2002) "NaN/Nav1.9: a sodium channel with unique properties" Trends Neurosci 25(5): 253-9.). These two biophysical properties allow NaV1.9 to play a role in establishing the resting membrane potential of nociceptive neurons. The resting membrane potential of NaV1.9 expressing cells is in the −55 to −50 mV range compared to −65 mV for most other peripheral and central neurons. This persistent depolarization is in large part due to the sustained low-level activation of NaV1.9 channels. This depolarization allows the neurons to more easily reach the threshold for firing action potentials in response to nociceptive stimuli. Compounds that block the NaV1.9 channel may play an important role in establishing the set point for detection of painful stimuli. In chronic pain states, nerve and nerve ending can become swollen and hypersensitive exhibiting high frequency action potential firing with mild or even no stimulation. These pathologic nerve swellings are termed neuromas and the primary Na channels expressed in them are NaV1.8 and NaV1.7 (See, Kretschmer, T., L. T. Happel, et al. (2002) "Accumulation of PN1 and PN3 sodium channels in painful human neuroma—evidence from immunocytochemistry" Acta Neurochir (Wien) 144(8): 803-10; discussion 810.). NaV1.6 and NaV1.7 are also expressed in dorsal root ganglion neurons and contribute to the small TTX sensitive component seen in these cells. NaV1.7 in particular my therefore be a potential pain target in addition to it's role in neuroendocrine excitability (See, Klugbauer, N., L. Lacinova, et al. (1995) "Structure and functional expression of a new member of the tetrodotoxin-sensitive voltage-activated sodium channel family from human neuroendocrine cells" Embo J 14(6): 1084-90).
NaV1.1 (See, Sugawara, T., E. Mazaki-Miyazaki, et al. (2001) "Nav1.1 mutations cause febrile seizures associated with afebrile partial seizures." Neurology 57(4): 703-5.) and NaV1.2 (See, Sugawara, T., Y. Tsurubuchi, et al. (2001) "A missense mutation of the Na+ channel alpha II subunit gene Na(v)1.2 in a patient with febrile and afebrile seizures causes channel dysfunction" Proc Natl Acad Sci U.S.A. 98(11): 6384-9) have been linked to epilepsy conditions including febrile seizures. There are over 9 genetic mutations in NaV1.1 associated with febrile seizures (See, Meisler, M. H., J. A. Kearney, et al. (2002) "Mutations of voltage-gated sodium channels in movement disorders and epilepsy" Novartis Found Symp 241: 72-81)
Antagonists for NaV1.5 have been developed and used to treat cardiac arrhythmias. A gene defect in NaV1.5 that produces a larger noninactivating component to the current has been linked to long QT in man and the orally available local anesthetic mexilitine has been used to treat this condition (See, Wang, D. W., K. Yazawa, et al. (1997) "Pharmacological targeting of long QT mutant sodium channels." J Clin Invest 99(7): 1714-20).
Several Na channel blockers are currently used or being tested in the clinic to treat epilepsy (See, Moulard, B. and D. Bertrand (2002) "Epilepsy and sodium channel blockers" Expert Opin. Ther. Patents 12(1): 85-91.); acute (See, Wiffen, P., S. Collins, et al. (2000) "Anticonvulsant drugs for acute and chronic pain" Cochrane Database Syst Rev 3), chronic (See, Wiffen, P., S. Collins, et al. (2000) "Anticonvulsant drugs for acute and chronic pain" Cochrane Database Syst Rev 3, and Guay, D. R. (2001) "Adjunctive agents in the management of chronic pain" Pharmacotherapy 21(9): 1070-81), inflammatory (See, Gold, M. S. (1999) "Tetrodotoxin-resistant Na+ currents and inflammatory hyperalgesia." Proc Natl Acad Sci U.S.A. 96(14): 7645-9), and neuropathic pain (See, Strichartz, G. R., Z. Zhou, et al. (2002) "Therapeutic concentrations of local anaesthetics unveil the potential role of sodium channels in neuropathic pain" Novartis Found Symp 241: 189-201, and Sandner-Kiesling, A., G. Rumpold Seitlinger, et al. (2002) "Lamotrigine monotherapy for control of neuralgia after nerve section" Acta Anaesthesiol Scand 46(10): 1261-4); cardiac arrhythmias (See, An, R. H., R. Bangalore, et al. (1996) "Lidocaine block of LQT-3 mutant human Na+ channels" Circ Res 79(1): 103-8, and Wang, D. W., K. Yazawa, et al. (1997) "Pharmacological targeting of long QT mutant sodium channels" J Clin Invest 99(7): 1714-20); neuroprotection (See, Taylor, C. P. and L. S. Narasimhan (1997) "Sodium channels and therapy of central nervous system diseases" Adv Pharmacol 39: 47-98) and as anesthetics (See, Strichartz, G. R., Z. Zhou, et al. (2002) "Therapeutic concentrations of local anaesthetics unveil the potential role of sodium channels in neuropathic pain." Novartis Found Symp 241: 189-201).
Various animal models with clinical significance have been developed for the study of sodium channel modulators for numerous different pain indications. E.g., malignant chronic pain, see, Kohase, H., et al., Acta Anaesthesiol Scand. 2004; 48(3):382-3; femur cancer pain (see, Kohase, H., et al., Acta Anaesthesiol Scand. 2004; 48(3):382-3); non-malignant chronic bone pain (see, Ciocon, J. O. et al., J Am Geriatr Soc. 1994; 42(6):593-6); rheumatoid arthritis (see, Calvino, B. et al., Behav Brain Res. 1987; 24(1):11-29); osteoarthritis (see, Guzman, R. E., et al., Toxicol Pathol. 2003; 31(6):619-24); spinal stenosis (see, Takenobu, Y. et al., J Neurosci Methods. 2001; 104(2):191-8); Neuropathic low back pain (see, Hines, R., et al., Pain Med. 2002; 3(4):361-5; Massie, J. B., et al., J Neurosci Methods. 2004; 137(2):283-9;
neuropathic low back pain (see, Hines, R., et al., Pain Med. 2002; 3(4):361-5; Massie, J. B., et al., J Neurosci Methods. 2004; 137(2):283-9); myofascial pain syndrome (see, Dalpiaz & Dodds, J Pain Palliat Care Pharmacother. 2002; 16(1):99-104; Sluka K A et al., Muscle Nerve. 2001; 24(1):37-46); fibromyalgia (see, Bennet & Tai, Int J Clin Pharmacol Res. 1995;15(3):115-9); temporomandibular joint pain (see, Ine H, Ren K, Brain Res Mol Brain Res. 1999; 67(1):87-97); chronic visceral pain, including, abdominal (see, Al-Chaer, E. D., et al., Gastroenterology. 2000; 119(5):1276-85); pelvic/perineal pain, (see, Wesselmann et al., Neurosci Lett. 1998; 246(2):73-6); pancreatic (see, Vera-Portocarrero, L. B., et al., Anesthesiology. 2003; 98(2):474-84); IBS pain (see, Verne, G. N., et al., Pain. 2003; 105(1-2):223-30; La J H et al., World Gastroenterol. 2003; 9(12):2791-5); chronic headache pain (see, Willimas & Stark, Cephalalgia. 2003; 23(10):963-71); migraine (see, Yammamura, H., et al., J Neurophysiol. 1999; 81(2):479-93); tension headache, including, cluster headaches (see, Costa, A., et al., Cephalalgia. 2000; 20(2):85-91); chronic neuropathic pain, including, post-herpetic neuralgia (see, Attal, N., et al., Neurology. 2004; 62(2):218-25; Kim & Chung 1992, Pain 50:355); diabetic neuropathy (see, Beidoun A et al., Clin J Pain. 2004; 20(3):174-8; Courteix, C., et al., Pain. 1993; 53(1):81-8); HIV-associated neuropathy (see, Portegies & Rosenberg, Ned Tijdschr Geneeskd. 2001; 145(15):731-5; Joseph E K et al., Pain. 2004; 107(1-2):147-58; Oh, S. B., et al., J Neurosci. 2001; 21(14):5027-35); trigeminal neuralgia (see, Sato, J., et al., Oral Surg Oral Med Oral Pathol Oral Radiol Endod. 2004; 97(1):18-22; Imamura Y et al., Exp Brain Res. 1997; 116(1):97-103); Charcot-Marie Tooth neuropathy (see, Sereda, M., et al., Neuron. 1996; 16(5):1049-60); hereditary sensory neuropathies (see, Lee, M. J., et al., Hum Mol Genet. 2003; 12(15):1917-25); peripheral nerve injury (see, Attal, N., et al., Neurology. 2004; 62(2):218-25; Kim & Chung 1992, Pain 50:355; Bennett & Xie, 1988, Pain 33:87; Decostered, I. & Woolf, C. J., 2000, Pain 87:149; Shir, Y. & Seltzer, Z. 1990; Neurosci Lett 115:62); painful neuromas (see, Nahabedian & Johnson, Ann Plast Surg. 2001; 46(1):15-22; Devor & Raber, Behav Neural Biol. 1983; 37(2):276-83); ectopic proximal and distal discharges (see, Liu, X. et al., Brain Res. 2001; 900(1):119-27); radiculopathy (see, Devers & Galer, (see, Clin J Pain. 2000; 16(3):205-8; Hayashi N et al., Spine. 1998; 23(8):877-85); chemotherapy induced neuropathic pain (see, Aley, K. O., et al., Neuroscience. 1996; 73(1):259-65); radiotherapy-induced neuropathic pain; post-mastectomy pain (see, Devers & Galer, Clin J Pain. 2000; 16(3):205-8); central pain (Cahana, A., et al., Anesth Analg. 2004; 98(6):1581-4), spinal cord injury pain (see, Hains, B. C., et al., Exp Neurol. 2000; 164(2):426-37); post-stroke pain; thalamic pain (see, LaBuda, C. J., et al., Neurosci Lett. 2000; 290(1):79-83); complex regional pain syndrome (see, Wallace, M. S., et al., Anesthesiology. 2000; 92(1):75-83; Xantos D et al., J Pain. 2004; 5(3 Suppl 2):S1); phanton pain (see, Weber, W. E., Ned Tijdschr Geneeskd. 2001; 145(17):813-7; Levitt & Heyback, Pain. 1981; 10(1):67-73); intractable pain (see, Yokoyama, M., et al., Can J Anaesth. 2002; 49(8):810-3); acute pain, acute post-operative pain (see, Koppert, W., et al., Anesth Analg. 2004; 98(4):1050-5; Brennan, T. J., et al., Pain. 1996; 64(3):493-501); acute musculoskeletal pain; joint pain (see, Gotoh, S., et al., Ann Rheum Dis. 1993; 52(11):817-22); mechanical low back pain (see, Kehl, L. J., et al., Pain. 2000; 85(3):333-43); neck pain; tendonitis; injury/exercise pain (see, Sesay, M., et al., Can J Anaesth. 2002; 49(2): 137-43); acute visceral pain, including, abdominal pain; pyelonephritis; appendicitis; cholecystitis; intestinal obstruction; hernias; etc (see, Giambernardino, M. A., et al., Pain. 1995; 61(3):459-69); chest pain, including, cardiac Pain (see, Vergona, R. A., et al., Life Sci. 1984; 35(18):1877-84); pelvic pain, renal colic pain, acute obstetric pain, including, labor pain (see, Segal, S., et al., Anesth Analg. 1998; 87(4):864-9); cesarean section pain; acute inflammatory, burn and trauma pain; acute intermittent pain, including, endometriosis (see, Cason, A. M., et al., Horm Behav. 2003; 44(2):123-31); acute herpes zoster pain; sickle cell anemia; acute pancreatitis (see, Toma, H; Gastroenterology. 2000; 119(5):1373-81); breakthrough pain; orofacial pain, including, sinusitis pain, dental pain (see, Nusstein, J., et al., J Endod. 1998; 24(7):487-91; Chidiac, J. J., et al., Eur J Pain. 2002; 6(1):55-67); multiple sclerosis (MS) pain (see, Sakurai & Kanazawa, J Neurol Sci. 1999; 162(2):162-8); pain in depression (see, Greene B, Curr Med Res Opin. 2003; 19(4):272-7); leprosy pain; behcet's disease pain; adiposis dolorosa (see, Devillers & Oranje, Clin Exp Dermatol. 1999; 24(3):240-1); phlebitic pain; Guillain-Barre pain; painful legs and moving toes; Haglund syndrome; erythromelalgia pain (see, Legroux-Crespel, E., et al., Ann Dermatol Venereol. 2003; 130(4):429-33); Fabry's disease pain (see, Germain, D. P., J Soc Biol. 2002;196(2):183-90); Bladder and urogenital disease, including, urinary incontinence (see, Berggren, T., et al., J Urol. 1993; 150(5 Pt 1):1540-3); hyperactivity bladder (see, Chuang, Y. C., et al., Urology. 2003; 61(3):664-70); painful bladder syndrome (see, Yoshimura, N., et al., J Neurosci. 2001; 21(21):8690-6); interstitial cyctitis (IC) (see, Giannakopoulos & Campilomatos, Arch Ital Urol Nefrol Androl. 1992; 64(4):337-9; Boucher, M., et al., J Urol. 2000; 164(1):203-8); and prostatitis (see, Mayersak, J. S., Int Surg. 1998; 83(4):347-9; Keith, I. M., et al., J Urol. 2001; 166(1):323-8).
Voltage-gated calcium channels are membrane-spanning, multi-subunit proteins that open in response to membrane depolarization, allowing Ca entry from the extracellular milieu. Calcium channels were initially classified based on the time and voltage-dependence of channel opening and on the sensitivity to pharmacological block. The categories were low-voltage activated (primarily T-type) and high-voltage activated (L,N,P,Q or R-type). This classification scheme was replaced by a nomenclature based upon the molecular subunit composition, as summarized in Table B (Hockerman G H, Peterson B Z, Johnson B D, Catterall W A. 1997. Annu Rev Pharmacol Toxicol 37: 361-96; Striessnig J. 1999. Cell Physiol Biochem 9: 242-69). There are four primary subunit types that make up calcium channels—α1, α2δ, β and γ (See, e.g., De Waard et al. Structural and functional diversity of voltage-activated calcium channels. In Ion Channels, (ed. T. Narahashi) 41-87, (Plenum Press, New York, 1996)). The α1 subunit is the primary determinant of the pharmacological properties and contains the channel pore and voltage sensor (Hockerman et al., 1997; Striessnig, 1999). Ten isoforms of the α1 subunit are known, as indicated in Table B below. The α2δ subunit consists of two disulfide linked subunits, α2, which is primarily extracellular and a transmembrane δ subunit. Four isoforms of α2δ are known, α2δ-1, α2δ-2, α2δ-3 and α2δ-4. The β subunit is a non-glycosylated cytoplasmic protein that binds to the α1 subunit. Four isoforms are known, termed β1 to β4. The γ subunit is a transmembrane protein that has been biochemically isolated as a component of Cav1 and Cav2 channels. At least 8 isoforms are known (γ1 to γ8) [Kang M G, Campbell K P. 2003. J Biol Chem 278: 21315-8]. The nomenclature for voltage-gated calcium channels is based upon the content of the α1 subunit, as indicated in Table B below. Each type of α1 subunit can associate with a variety of β, α2δ or γ subunits, so that each Cav type corresponds to many different combinations of subunits.
TABLE BCav Nomenclatureα1 subunitPharmacological nameCav1.1α1SL-typeCav1.2α1CL-typeCav1.3α1DL-typeCav1.4α1FCav2.1α1AP- or Q-typeCav2.2α1BN-typeCav2.3α1ER-typeCav3.1α1GT-typeCav3.2α1HT-typeCav3.3α1IT-type
Cav2 currents are found almost exclusively in the central and peripheral nervous system and in neuroendocrine cells and constitute the predominant forms of presynaptic voltage-gated calcium current. Presynaptic action potentials cause channel opening and neurotransmitter release is steeply dependent upon the subsequent calcium entry. Thus, Cav2 channels play a central role in mediating neurotransmitter release.
Cav2.1 and Cav2.2 contain high affinity binding sites for the peptide toxins ω-conotoxin-MVIIC and ω-conotoxin-GVIA, respectively, and these peptides have been used to determine the distribution and function of each channel type. CaV2.2 is highly expressed at the presynaptic nerve terminals of neurons from the dorsal root ganglion and neurons of lamina I and II of the dorsal horn (Westenbroek R E, Hoskins L, Catterall W A. 1998. J Neurosci 18: 6319-30; Cizkova D, Marsala J, Lukacova N, Marsala M, Jergova S, et al. 2002. Exp Brain Res 147: 456-63). CaV2.2 channels are also found in presynaptic terminals between second and third order interneurons in the spinal cord. Both sites of neurotransmission are very important in relaying pain information to the brain.
Pain can be roughly divided into three different types: acute, inflammatory, and neuropathic. Acute pain serves an important protective function in keeping the organism safe from stimuli that may produce tissue damage. Severe thermal, mechanical, or chemical inputs have the potential to cause severe damage to the organism if unheeded. Acute pain serves to quickly remove the individual from the damaging environment. Acute pain by its very nature generally is short lasting and intense. Inflammatory pain on the other had may last for much longer periods of time and it's intensity is more graded. Inflammation may occur for many reasons including tissue damage, autoimmune response, and pathogen invasion. Inflammatory pain is mediated by an "inflammatory soup" that consists of substance P, histamines, acid, prostaglandin, bradykinin, CGRP, cytokines, ATP, and neurotransmitter release. The third class of pain is neuropathic and involves nerve damage that results in reorganization of neuronal proteins and circuits yielding a pathologic "sensitized" state that can produce chronic pain lasting for years. This type of pain provides no adaptive benefit and is particularly difficult to treat with existing therapies.
Pain, particularly neuropathic and intractable pain is a large unmet medical need. Millions of individuals suffer from severe pain that is not well controlled by current therapeutics. The current drugs used to treat pain include NSAIDS, COX2 inhibitors, opioids, tricyclic antidepressants, and anticonvulsants. Neuropathic pain has been particularly difficult to treat as it does not respond well to opiods until high doses are reached. Gabapentin is currently the favored therapeutic for the treatment of neuropathic pain although it works in only 60% of patients where it shows modest efficacy. The drug is however very safe and side effects are generally tolerable although sedation is an issue at higher doses.
Validation of Cav2.2 as a target for the treatment of neuropathic pain is provided by studies with ziconotide (also known as ω-conotoxin-MVIIA), a selective peptide blocker of this channel (Bowersox S S, Gadbois T, Singh T, Pettus M, Wang Y X, Luther R R. 1996. J Pharmacol Exp Ther 279: 1243-9; Jain K K. 2000. Exp. Opin. Invest. Drugs 9: 2403-10; Vanegas H, Schaible H. 2000. Pain 85: 9-18) In man, intrathecal infusion of Ziconotide is effective for the treatment of intractable pain, cancer pain, opioid resistant pain, and neuropathic pain. The toxin has an 85% success rate for the treatment of pain in humans with a greater potency than morphine. An orally available antagonist of CaV2.2 should have similar efficacy without the need for intrathecal infusion. CaV2.1 and CaV2.3 are also in neurons of nociceptive pathways and antagonists of these channels could be used to treat pain.
Antagonists of CaV2.1, CaV2.2 or CaV2.3 should also be useful for treating other pathologies of the central nervous system that apparently involve excessive calcium entry. Cerebral ischaemia and stroke are associated with excessive calcium entry due to depolarization of neurons. The CaV2.2 antagonist ziconotide is effective in reducing infarct size in a focal ischemia model using laboratory animals, suggesting that CaV2.2 antagonists could be used for the treatment of stroke. Likewise, reducing excessive calcium influx into neurons may be useful for the treatment of epilepsy, traumatic brain injury, Alzheimer's disease, multi-infarct dementia and other classes of dementia, amyotrophic lateral sclerosis, amnesia, or neuronal damage caused by poison or other toxic substances.
CaV2.2 also mediates release of neurotransmitters from neurons of the sympathetic nervous system and antagonists could be used to treat cardiovascular diseases such as hypertension, cardiac arrhythmia, angina pectoris, myocardial infarction, and congestive heart failure.
Unfortunately, as described above, the efficacy of currently used sodium channel blockers and calcium channel blockers for the disease states described above has been to a large extent limited by a number of side effects. These side effects include various CNS disturbances such as blurred vision, dizziness, nausea, and sedation as well more potentially life threatening cardiac arrhythmias and cardiac failure. Accordingly, there remains a need to develop additional Na channel and Ca channel antagonists, preferably those with higher potency and fewer side effects. Unfortunately, as described above, the efficacy of currently used sodium channel blockers and calcium channel blockers for the disease states described above has been to a large extent limited by a number of side effects. These side effects include various CNS disturbances such as blurred vision, dizziness, nausea, and sedation as well more potentially life threatening cardiac arrhythmias and cardiac failure. Accordingly, there remains a need to develop additional Na channel and Ca channel antagonists, preferably those with higher potency and fewer side effects.

Biaryls useful as modulators of ion channels


A semiconductor device includes a type IV semiconductor base substrate, a first type III-V semiconductor layer formed on a first surface of the base substrate, and a second type III-V semiconductor layer with a different bandgap as the first type III-V being formed on the first type III-V semiconductor layer. The semiconductor device further includes first and second electrically conductive device terminals each being formed on the second type III-V semiconductor layer and each being in ohmic contact with the two-dimensional charge carrier gas. The base substrate includes a first highly doped island that is disposed directly beneath the second device terminal and extends to the first surface of the base substrate. The first highly-doped island is laterally disposed between portions of semiconductor material having a lower net doping concentration than the first highly-doped island.

Semiconductor transistors, in particular field-effect controlled switching devices such as a MISFET (Metal Insulator Semiconductor Field Effect Transistor), in the following also referred to as MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and a HEMT (high-electron-mobility Field Effect Transistor) also known as heterostructure FET (HFET) and modulation-doped FET (MODFET) are used in a variety of applications. An HEMT is a transistor with a junction between two materials having different band gaps, such as GaN and AlGaN.
HEMTs are commonly formed from III-V semiconductor materials, such as GaN, GaAs, InGaN, AlGaN, etc. In a GaN/AlGaN based HEMT, a two-dimensional electron gas (2DEG) arises at the interface between the AlGaN barrier layer and the GaN buffer layer. The 2DEG forms the channel of the device instead of a doped region, which forms the channel in a conventional MOSFET device. Similar principles may be utilized to select buffer and barrier layers that form a two-dimensional hole gas (2DHG) as the channel of the device. A 2DEG or a 2DHG is generally referred to as a two-dimensional carrier gas. Without further measures, the heterojunction configuration leads to a self-conducting, i.e., normally-on, transistor. Measures must be taken to prevent the channel region of an HEMT from being in a conductive state in the absence of a positive gate voltage.
One technique for forming III-V semiconductors for HEMTs involves using a readily available semiconductor wafer, such as a Silicon wafer, to grow III-V semiconductor material thereon. This technique is preferable at least in part because of the abundance and availability of type IV semiconductor wafers, such as Silicon wafers. Direct epitaxial growth of III-V semiconductor material on a type IV semiconductor wafer is not possible. For this reason, the surface of the Silicon wafer is coated with a nucleation layer (e.g., an AlN layer), which enables the growth of III-V semiconductor material thereon. A lattice transition layer can be formed on the nucleation layer to alleviate mechanical stress from lattice mismatch between the crystalline structure of the wafer and the III-V semiconductor epitaxial layers.
One performance limitation of modern semiconductor devices that designers seek to mitigate is leakage current. In general, leakage current refers to undesirable electrical conduction between two terminals in a device that are nominally electrically isolated from one another. For instance, any current that flows between the source and drain terminals of a transistor in the "OFF" state is considered leakage current, which can detrimentally impact power dissipation and limit the voltage blocking capability of the device.
HEMTs that utilize a type IV semiconductor wafer as a base substrate are susceptible to vertical leakage whereby the base substrate provides a leakage path between the source and drain terminals of the device. Phenomena such as tunneling, thermionic emission and electron injection allows electrons to traverse the interface between the type IV semiconductor substrate and the type III-V semiconductor material. At sufficiently high voltages, this current flow predominates and limits the voltage blocking capability of the device.

High voltage blocking III-V semiconductor device


Techniques and mechanisms for exchanging sets of video data each via multiple channels. In an embodiment, a first data set is distributed across the multiple channels according to a first mapping of the multiple channels each to a different respective one of multiple data types, where each of the multiple data types corresponds to a different respective dimension of a color space. In another embodiment, a second data set is distributed across the multiple channels according to a second mapping of the multiple channels each to a different respective one of the multiple data types, where the second mapping is different from the first mapping.

1. Technical Field
This disclosure relates generally to exchange video data, and in particular, but not exclusively to exchanging video data for a liquid-crystal-on-silicon ("LCOS") projector.
2. Background Art
Improvements in video hardware technology continue to provide for an increasingly wide variety of electronic device which can implement, or otherwise support, the display of increasingly high resolution video images. For example, successive generations of computer hardware, such as that in handheld devices or other such platforms, are of increasingly small form factor, and are capable of supporting increasingly high throughput exchanges of video data.
However, as a result, it is increasingly important for such platforms to support exchanges between more varied combinations of inter-device hardware or intra-device hardware. This is typically manifest as a need for video data to be exchanged in a particular format, order etc. which accommodates functionality of some downstream display hardware. Implementing functionality to address this need is constrained by the premium placed on size, weight, speed, cost, etc. in producing next-generation video devices. Accordingly, it is increasingly valuable to provide incremental improvements in efficiency for hardware to implement such functionality.

Method, apparatus and system for exchanging video data in parallel


An apparatus and method implementable with a software application for checking or assessing exceedances of process variables beyond safe operating limits is described. The process has instruments, a process history database, and one or more external databases. The instruments measure process variables and can be associated with the equipment. The process history database stores a plurality of values of the process variables measured by the instruments. Data of the equipment, the associated instrument, and the safe operating limit for the equipment is defined in a limit sequence of the software application. The process history database is searched for one or more exceedance values that are measured by the defined instrument and that exceed the defined safe operating limit. The “apparent” exceedance values are then imported into the software application. Finally, the user uses the software application to evaluate and validate the exceedance values.

Referring to FIG. 1, a process 10 is schematically illustrated. A typical process 10 may have thousands of pieces of equipment 12, such as valves, vessels, pumps, pressure chambers, relief valves, etc., interconnected by piping 14. Each piece of equipment 12 can have several operating parameters, safeguards, overpressure scenarios, or the like. A Distributive Control System (DCS) 16 is typically used to monitor and control aspects of the process 10 automatically. The DCS 16 has a plurality of instruments 18 wired to the DCS 16. The instruments 18 are positioned along the process 10 and measure various process variables, such as pressure, temperature, flow, level, etc. The instruments 18 can be flow indicators, temperature sensors, pressure sensors, etc., which may or may not be associated with a piece of equipment 12. The DCS 16 typically uses instrument tags, which are numbers identifying particular instruments 18 in the process 10.
An Engineering Information Management (EIM) framework 20 is also typically used with the process 10. The EIM framework 20 has external applications 21 and a plurality of external databases 22-26, which store process information on a computer or network. The external applications 21 can include, but are not limited to, Lotus Notes™ (IBM®), Microsoft Access™ (Microsoft®), DOC 3000™ by Plant Automation Services Inc., and Uniformance™ Process History Database (PHD) by Honeywell, Inc. Briefly, DOC 3000™ is Windows-based software and is a data import tool for the Honeywell TPS and TDC3000™ systems. Uniformance PHD™ by Honeywell, Inc. is also based on Microsoft® technologies. Uniformance PHD™ provides data collection, data storage, historization, and visualization for process environments. The external databases 22-25 typically include an equipment database 22, a drawing database 23, a safe operating limit database 24, and a process history database 25. In the process industry, there is no standard structure for such databases, and the databases 22-25 can have a variety of different information depending on the process 10 or particular implementation.
The equipment database 22, which can be created in Lotus Notes™, stores details about equipment 12 used in the process 10. For example, the equipment database 22 typically contains equipment numbers or tags and descriptions of the equipment 12. The equipment tags can identify a specific piece of equipment 12 or can provide the functional location of the piece of equipment 12 in the process 10. The drawing database 23, which can be created in Lotus Notes™, stores details of the drawings of the process 10. For example, the drawing database 23 can contain drawing numbers of the process 10, revision dates, and descriptions or titles of the drawings.
The safe operating limit (SOL) database 24, which can be created in Lotus Notes™ or Microsoft Access™, stores details of safe operating limits for the process 10, such as the maximum or minimum pressure, temperature, levels, flow rates, compositions, etc. In the database 24, the safe operating limits are typically associated with the instrument tags of the instruments 18 used to measure the limits. In addition, the safe operating limits in the database may be associated with equipment 12 that should not exceed a specific safe operating limit.
Process standards and the Occupational Safety and Health Administration (OSHA) §1910.119(d)(2) (29 C.F.R. §1910.119) require that a process maintains safe upper and lower limits for various process variables and require that operators evaluate the effects of exceedances from such process variables. As noted previously, a safe operating limit (SOL) is a set limit for any operating variable, the exceedance of which has the potential of causing a hazardous situation in the process 10. Safe operating limits are established for all pressurized or otherwise potentially hazardous equipment 12 of the process 10. A safe operating limit can be inherent to the design of a piece of equipment 12. Also, a safe operating limit can be dictated by the process 10 and the interdependence of the process equipment 12. Examples of safe operating limits can include, but are not limited to, maximum allowable working temperature (MAWT), maximum allowable working pressure (MAWP), safe upper temperature limit (SUTL), safe lower temperature limit (SLTL), safe upper pressure limit (SUPL), safe lower pressure limit (SLPL), and the like. Other safe operating limits may also be established for operating variables as required and can include excess speed for steam turbines or minimum flow for pumps.
Software packages for recording the history of a process are known in the art.
Process history software is primarily directed to providing a log of process history conditions or values of process variables. Process history software records process variables measured from the various instruments 18 and stores the measurements in a process history database 25. The process variables are typically recorded at regular, predefined intervals (e.g., every minute) in the process history database 25. Typically, the process history database 25 holds a considerable amount of recorded data that is maintained for years. The process history database can be used to compare operation of the process during different time periods. If an incident does occur, the process history database can be used to investigate the event. The data in the process history database 25 typically includes instrument tags of the instruments 18, time entries for each measurement, and values of the process variables measured by the instruments 18. One example of process history software includes PHD™ by Honeywell, which stores data in an Oracle™ database.
To monitor and maintain the operating conditions of the process 10, the DCS 16 uses alarms, pressure relief valves, safety shutdowns, or other safeguards for the process 10. For example, alarms can be triggered when a process variable measured by an instrument 18 exceeds a predefined operating limit. When the alarm is triggered, the DCS 16 may automatically respond by opening a valve or performing some other action. Alternatively, the operators may take specific action when an alarm is triggered.
Software packages for storing the event history of the DCS 16 are also known in the art. The event history software creates a log of various DCS events, such as alarm events, triggered safeguards, alarm set point changes, alarm responses, etc. Examples of event history software includes Process Guard™ software by Matricon Pty. Ltd., Event Logger™ by Nikos, Inc., and AMO Suite™ by Plant Automated Systems. Event history software allows operators to review logs of triggered events, alarms, or other safeguards of the process 10. For example, for frequent alarms, which are often referred to as nuisance alarms, the operators can review the log and fix any setpoints if necessary.
Industry personnel may improperly assume that the number of triggered alarms or other safeguards offer a measure of the safety of the process 10. However, the process 10 typically has a large number of alarms or other safeguards, and some alarms or safeguards may be unnecessary, may be improperly set, or may be inadvertently omitted.
Thus, the number of triggered alarms or other safeguards may represent an improper estimate of the safety of the process 10. Therefore, a need exists in process industries for software that can be used to monitor a process 10 proactively and to determine whether the process 10 is legitimately operating safely with respect to actual equipment and process limits, independent of safeguards, and before an incident occurs.
The subject matter of the present disclosure is directed to overcoming, or at least reducing the effects of, one or more of the problems set forth above.

Apparatus and method for assessing exceedance of a process beyond safe operating limits


An incense burner comprising a base portion and a removable tapered stack portion and which includes an electric fan to disperse incense smoke. The base portion defines a fan retention cavity configured to retain the electric fan. Attached to the top of the electric fan is a vented platform containing a plurality of vents and an incense retainer aperture. An incense retainer retains an ignited stick of incense and is positioned into the incense retainer aperture. A tapered stack which includes a smoke retardant ring is removably positioned on top of the vented platform. The electric fan is switched on thereby causing the incense smoke to present itself in a pleasing manner.

The present invention relates generally to incense holders and burners and more specifically to an incense burner that includes a removable tapered smokestack and an electric fan to disperse incense smoke in an advantageous and pleasing manner.
Burning incense is popular in order to provide a pleasant aroma, create a particular atmosphere, or to mask unpleasant or undesirable odors. An examination of the prior art in the field of incense burners reveals several devices, none of which exhibit the novel combination of elements that are disclosed by the present invention. Typical prior art incense burners include a retaining element for securing an ignited piece of incense and means for catching falling incense ash.
It is known in the art to include a fan element for dispersing incense smoke throughout the room in which the incense is being burned. For example, U.S. Pat. No. 4,219,531 entitled Smoke Diffusing Device issued to Wisniewski on Aug. 26, 1980 discloses such a device.
It is also known in the art to provide a cylindrical smoke stack or chimney device to surround a lit stick of incense. Such an incense burning device is disclosed in U.S. Pat. No. 5,215,719 entitled Incense Burner issued to Newman on Jun. 1, 1993. Another such device is shown in U.S. Pat. No. 4,155,979 issued to Powell on May 22, 1979 which discloses a Combination Incense Burner and Incense Storage Device.
None of the prior art discloses a device that causes the incense smoke to present a visual display before being dispersed throughout a living space. It would be advantageous to offer a variation on a device which historically appeals to one human sense (smell) and double the number of senses effected by adding a visual spectacle. More specifically, it would be advantageous to provide a device for retaining and burning incense that will cause the incense smoke to gather, linger and undulate in the vicinity of the device. This present invention is just such a device which includes a means for retaining a burning piece of incense, means for impelling air flow through the incense burner, and means for dispersing the incense smoke in a visually pleasing manner. None of the prior art includes a fan element combined with a removable chimney that includes a smoke-retardant ring. Such are the objectives, advantages and novel structural elements presented by the invention disclosed herein.
Other objectives, advantages and novel features, further scope of applicability of the present invention will be set forth in the detailed description to follow, taken in conjunction with the accompanying drawings, and in part will become apparent to those skilled in the art upon examination of the following, or may be learned by practice of the invention. The objects and advantages of the invention may be realized and attained by means of the instrumentalities and combinations particularly pointed out in the appended claims.
The present invention incense burner is a device for retaining and burning incense in such a manner that the smoke becomes subjected to the laws of physics which, until now, had not been harnessed for this purpose. The incense burner comprises generally a base member and a tapered stack. Within the base member, a fan retention unit defines a fan retention cavity. A switched electric fan unit is provided which is positioned inside of the fan retention cavity. Attached to top of the electric fan is a vented platform which contains a plurality of vents and an incense retainer aperture. An incense retainer is provided to hold a standard stick of incense which takes the form of a tapered shaft with a washer or disc attached thereto and which is configured to fit into the incense retainer aperture. A retainer guard in the form of a hexagonal nut surrounded by a metal foundation ring which is in turn surrounded by a circular rubber member forms a receptacle to receive falling ashes and embers. The fan retention unit sits on top of a four tiered rubber gasket, which in turn rests on a base with a dynamic aperture. A tapered stack or chimney is removably positioned on the top of the vented platform. The stack tapers from bottom to top and at its top includes a smoke-retardant ring and may have a screwably removable top portion. At the bottom of the stack and positioned amid its four legs is an air flow inhibitor.
The invention is employed by lighting a stick of incense and placing it into the incense retainer. The incense retainer is placed into the incense retainer aperture on the vented platform and the retainer guard is positioned around the incense retainer. Now the tapered stack is placed around the ignited stick of incense thereby surrounding it. The unit is plugged into an electrical outlet and the fan is switched on. Thus, air is sucked through the bottom of the device, through the fan cavity, through the vented platform and through the tapered stack where it mixes with incense smoke. The smoke traverses the tapered stack where it exits over the smoke-retardant ring. As such, the smoke presents itself in a pleasing manner, lingering and dispersing, due to the conflicting upward and downward air drafts.


The invention relates to a method of producing a plain bearing bush or bearing shell of varying width from a flat strip material, which comprises the following steps:                incorporating grooves in the flat strip material along the bush or bearing-shell contour,        rolling or bending the flat strip material into a bush or bearing-shell shape,        mechanical severing of the excess marginal regions along the grooves,        obtaining a finished plain bearing bush or bearing shell which has the final shape.In this case, the invention is based on the idea of producing trapezoidal or stepped bushes as “shaped bushes” from strip material. The starting point in this case may be a strip of rectangular cross section, which is normally used for cylindrical bushes. The grooves can be incorporated in the flat strip material.

Sliding elements in the form of bushes or half shells are often produced from strip-shaped input stock. On account of their efficient means of production and the resulting favorable properties, rolled plain bearing bushes are being increasingly used. In this case, the initial material for the production is a strip having a smooth surface and, in some cases, embossed lubricating pockets or hole patterns. The strips are normally cut into plates and to a bush contour and are then bent in a circular shape. Respective embodiments of rolled sliding elements can thus already be adapted in a simple manner in the strip material to the respective requirements. Such sliding elements are used in general machine building, such as, for example, in construction and agricultural machines, and in particular as a connecting rod bush in the small connecting rod eye or as a piston boss bushing in the automotive sector.
Laid-Open Specification DE 199 07 571 A1 discloses a rolled plain bearing bush which has a bush width varying in the circumferential direction. To this end, the bush is produced from a strip section of varying width produced beforehand. Before the shaping, a bevel is applied to the flank sections of the formed plate by a further method step, for example by embossing. A varying bush width is intended in particular to save weight in the plain bearing bush pressed firmly into position and is at the same time to be adapted to the geometrical boundary conditions of a connecting rod or piston. After the rolling, the plain bearing bush is not subjected to any further machining of the width.
Furthermore, U.S. Pat. No. 4,907,626 discloses a rolled plain bearing produced from strip-shaped material. The strip material is provided with grooves, along which the strip is cut into pieces before the shaping process. Each strip section obtained in this way is then rolled into a bush.

Method of producing a plain bearing bush or bearing shell of varying width


The present invention is directed to a pharmaceutical composition comprising guanfacine or a salt thereof in nanoparticle form and at least one non-pH dependent sustained release agent. The present invention further is directed to a method of producing said nanoparticles and to nanoparticles obtained by this method.

Guanfacine hydrochloride has a pH dependent solubility, being more soluble at low pH values than higher pH values. The dissolution rate of the substance is directly related to the solubility of this substance in the given medium. In the case of basic drugs such as guanfacine HCl dissolution rate thus is higher at low pH values compared to higher pH values. In case of sustained or extended release formulation this characteristic of the API is not desired due to the fact that drug release rate will be higher at earlier parts of the gastrointestinal tract than later segments of the gastrointestinal tract where the pH is higher. This in vivo situation can clearly be observed with dissolution studies where drug release rate is higher in low pH medium, such as pH 1.2 HCl medium, than pH 6.8 Phosphate buffer.
In such cases sustained release can not be maintained since most of the API will be dissolved in stomach at a higher rate compared to the intestines resulting in peak plasma levels in very early stages of absorption which decreases as the formulation reaches to the intestines.
Different sustained release formulations of guanfacine HCl were previously described in U.S. Pat. Nos. 5,854,290; 6,287,599; 6,811,794 where pH dependent release of guanfacine was modified using a pH dependent polymer and an acid in the sustained release formulations. A pH dependent polymer was used to limit the dissolution from sustained release formulation whereas an acid was used to create a micro pH environment to improve the dissolution of guanfacine HCl in basic media. However, the dissolution in acidic media was still higher than the dissolution of sustained release tablets in basic media.
US 2011/0262496 relates to drug therapy formulations for reducing the side effects associated with a therapeutic. In some embodiments, US 2011/0262496 provides a reduction in sleep- and diet-related side effects associated with a therapeutic. The formulation may be in the form of a nanoparticle having a mean diameter of 100-500 nm. The nanoparticles are obtained by milling for several hours.
US 2003/0152622 is directed to an erodible, gastric-retentive drug dosage form for delivering a pharmacologically active agent to the stomach, duodenum, and upper small intestine of a patient, the dosage form comprising the pharmacologically active agent incorporated in a matrix of at least one biocompatible, hydrophilic polymer that (a) swells in the presence of water in gastric fluid such that the size of the dosage form is sufficiently increased to provide gastric retention in the stomach of a patient in whom the fed mode has been induced, (b) gradually erodes within the gastrointestinal tract over a determinable time period, and (c) releases the active agent throughout the determinable time period.

Sustained release guanfacine HCL formulation


In a reflection characteristic measuring apparatus 10 and a method for calibrating the reflection characteristic measuring apparatus, multiple standard spectral characteristics, or multiple calibration data based on the multiple standard spectral characteristics are obtained in advance with corresponding reference values relating to an emission characteristic of a light source 21. An optimum standard spectral characteristic or an optimum calibration data is selected from the multiple standard spectral characteristics or the multiple calibration data obtained. A spectral reflection characteristic of a sample is calculated using the selected standard spectral characteristic or the selected calibration data.

1. Field of the Invention
The present invention relates to a reflection characteristic measuring apparatus for measuring a reflection characteristic of a sample, and more particularly to a reflection characteristic measuring apparatus for measuring a reflection characteristic of samples by serially illuminating the samples with illumination light from an incandescent lamp, and a method for calibrating the reflection characteristic measuring apparatus.
2. Description of the Related Art
There is known a conventional reflection characteristic measuring apparatus, e.g. a spectrocolorimeter for use in printed matter, for serially measuring reflection characteristics of printed patches, as shown in FIG. 12. Specifically, in the conventional reflection characteristic measuring apparatus, a sample 903 is illuminated with a light flux 902a from an incandescent lamp 902 which is driven by a driving circuit 901 in a direction of 45° with respect to a normal direction to the sample 903, and a normal direction component 903n in sample reflected light obtained by the illumination is condensed on an objective lens 904 for guiding to a spectral device 905. The spectral device 905 measures a spectral intensity of the normal direction component 903 in the sample reflected light, and transmits spectral intensity data 905a obtained by the measurement to a computation control device 906. The computation control device 906 converts the spectral intensity data 905a into a spectral reflection characteristic by a well-known method, based on spectral intensity data of a standard sample, which has been measured and stored in advance in the similar manner as described above, and a known spectral reflectance factor of the standard sample.
In the case where an incandescent lamp popularly used in the reflection characteristic measuring apparatus is driven by a constant voltage, as shown in FIG. 10, immediately after the incandescent lamp is turned on, the filament temperature indicated by the reference numeral 921 is increased by a rush current, with the result that the emission intensity is instantaneously increased. Then, the emission intensity is gradually reduced, and the incandescent lamp is transited to a normal state as shown by the reference numeral 922. A change in intensity of an emission light flux i.e. a change in emission intensity resulting from an increase in filament temperature differs depending on a wavelength. The emission intensity is changed within several seconds immediately after the lamp is turned on.
FIG. 11 is a diagram showing an example of a change in emission intensity, standard at a peak value of the emission intensity, with respect to 450 nm wavelength, 550 nm wavelength, and 650 nm wavelength of an incandescent lamp. As shown in FIG. 11, the degree of change in emission intensity is increased, as the wavelength is shifted to a short wavelength band. An influence of the change in emission intensity is corrected, as shown in FIG. 12, by using a reference spectral section i.e. a reference spectral device in a reference optical system 907 of the reflection characteristic measuring apparatus, and by acquiring spectral intensity data 907a of illumination light from the incandescent lamp 902 (see e.g. Japanese Unexamined Patent Publication No. Hei 11-72388).
In a reflection characteristic measuring apparatus without a reference optical system, or a reflection characteristic measuring apparatus designed to acquire merely data on the light amount with use of a light sensor as a reference optical system, high-precision measurement cannot be performed, because the emission intensity i.e. the spectral intensity is changed. On the other hand, if a reflection characteristic measuring apparatus is designed in such a manner that the apparatus is required to wait until the emission intensity is transited to a normal state, in other words, until the driving condition of the incandescent lamp is stabilized, to secure precision, a long measurement time may be required.

Reflection characteristic measuring apparatus, and method for calibrating reflection characteristic measuring apparatus


Techniques are disclosed for generating media delivery packages from a source package. The techniques include receiving, by a computer system, a source package associated with a content item. Upon receiving the source package, the computer system determines a plurality of workflows, whereby each workflow is operable for generating a delivery package of a plurality delivery packages. A workflow defines parameters for execution of one or more transformation modules of a set of transformation modules of a media transformation service (MTS). The MTS generates the plurality of delivery packages based at least in part on the source package and an execution of respective workflows. The computer system then provides the plurality of delivery packages to respective target entities for distribution.

Multimedia distribution services exist that service different markets (e.g., target customers and/or geographic regions). In one example, a first distribution service may distribute video content for customers in Japan, while a second distribution service may distribute video content for customers in Germany. Each distribution service may mandate content delivery specifications (e.g., formats or standards) for content providers that provide content to the respective distribution service. In some cases, the content delivery specifications may be unique to the particular distribution service and/or market. For example, a video content provider (e.g., movie studio) may create a movie title and wish to have the movie distributed by both the first and second distribution services (e.g., for reaching audiences in both Japan and Germany). Accordingly, the movie studio may perform a first set of tasks to prepare the movie content for distribution by the first distribution service, and a second set of tasks to prepare the movie content for distribution by the second distribution service. As the number of markets increases, the resources required to prepare content for distribution can become daunting even for larger content providers, resulting in reduced distribution of content.
There is a need for improved efficiency in preparing multimedia content for distribution in different markets.


A sheet aligning device includes a sheet feeder that discharges a sheet in a first direction, a sheet tray on which the sheet is stacked, a sheet jogger that aligns the sheet on the sheet tray in a second direction perpendicular to the first direction, and a sheet detection filler that detects a state of the sheet on the sheet tray. The sheet detection filler detects a position of a topmost sheet in the stack of sheets on the sheet tray and determines an alignment position from where the sheet jogger is to begin alignment of the sheets.

1. Field of the Invention
The present invention relates to a sheet aligning device, a sheet processing device, and an image forming apparatus.
2. Description of the Related Art
Sheet processing devices, such as finishers in image forming apparatuses, are required to have sheet aligning mechanisms for precisely aligning sheet recording media (hereinafter, referred to as "sheet(s)" as appropriate) discharged on sheet trays. For example, sheet processing devices that include sheet aligning mechanisms near sheet discharge portions are known. Those sheet aligning mechanisms align the sheets on the sheet trays.
A conventional sheet processing device is disclosed in Japanese Patent Application Laid-open No. 2002-167104. This technology provides a sheet processing device that aligns a sheet discharged from a discharging unit in a sheet discharging direction. A stacking unit of the sheet processing device is provided with an end fence, and a sheet is properly aligned when a leading edge of the sheet, which is discharged on a sheet tray by the discharging unit, hits the end fence. The sheet processing device includes a returning unit, that is, a rotation member that aligns a sheet by applying stress to the sheet on the sheet tray so that the sheet is moved toward the end fence and hits the end face. The returning unit can be set on arbitrary positions along the sheet discharging direction.
Furthermore, Japanese Patent Application Laid-open No. 2002-179326 discloses another conventional sheet processing device. This technology provides a sheet processing device that performs sorting and aligning of sheets on a sheet tray using less driving power regardless of how many sheets are present on the sheet tray. The sheet processing device includes a discharging unit that discharges a conveyed sheet, a stacking unit on which the sheet discharged by the discharging unit is stacked, and an aligning unit that aligns the sheet stacked on the stacking unit. The aligning unit includes a mechanism for aligning a sheet at a predetermined position in a direction (a shift direction) perpendicular to a sheet discharging direction and another mechanism for aligning the sheet at different positions in the shift direction perpendicular to a sheet discharging direction with respect to each stack of sheets.
Moreover, Japanese Patent Application Laid-open No. 2002-356270 discloses still another conventional sheet aligning device, an image forming apparatus, and a sheet processing device. This technology provides an aligning mechanism that can align a sheet on a sheet tray even when the sheet is curled. The sheet aligning device include a discharging unit that discharges a conveyed sheet, a stacking unit on which the sheet discharged by the discharging unit is stacked, and an aligning unit that aligns the sheet stacked on the stacking unit. The aligning unit aligns a sheet by sandwiching side edges of the sheet in a direction parallel to a sheet discharging direction. The aligning unit is rotatably supported on a rotation axis such that a base point of the aligning unit can rotate within a predetermined range. A position of the aligning unit is adjusted so that the aligning unit can sandwich the side edges of the sheet by controlling amount of rotation of the rotation axis.
However, in the conventional sheet processing devices, sheets are aligned when sheets are discharged on the sheet tray. Therefore, if curled sheets or Z-folded sheets are stacked on the sheet tray, a trailing edge of the stack of the sheets becomes thick, and a positional relationship between a shift jogger and side edges of the stack of the sheets is disturbed. This leads to degradation of precision of sheet alignment.
Furthermore, in the sheet processing device disclosed in Japanese Patent Application Laid-open No. 2002-356270, the shift jogger includes a detecting unit that detects a state of a sheet stacked on the stacking unit. However, this method is effective only in a shift mode and it is ineffective in a normal stacking mode.

Sheet aligning device and image forming apparatus


A positive resist composition comprising: (A) a resin having alicyclic hydrocarbon groups in side chains, containing specified two types of repeating units, which increases the solubility in an alkali developing solution by the action of an acid; and (B) a particular sulfonium compound having a specified structure and capable of generating an acid upon irradiation with an actinic ray or radiation.

In recent years, integrated circuitry has become increasingly larger in its scale of integration, and manufacturing semiconductor boards of VLSI chips or the like has come to require super minute patterning capable of ensuring trace widths of half a micron or below. In order to meet this requirement, wavelengths of exposure apparatus used in photo-lithography have become shorter and shorter, and it is being considered now to utilize excimer laser beams of shorter wavelengths in the ultraviolet region (e.g., XeCl, KrF, ArF).
In forming patterns by lithography in such a wavelength region, chemical amplification resist is used to advantage.
In general, chemical amplification resist compositions fall roughly into three categories: the so-called 2-component, 2.5-component and 3-component systems. In the 2-component system, a compound capable of generating an acid by photolysis (referred to as a photo-acid generator, hereinafter) and a binder resin are used in combination. The binder resin used therein is a resin containing groups capable of decomposing under the action of an acid to increase the resin solubility in an alkali developer (acid-decomposable groups). In the 2.5-component system, a low molecular-weight compound having an acid-decomposable group is further included in addition to such a 2-component system. The 3-component system includes a photo-acid generator, an alkali-soluble resin and such an acid-decomposable compound of low molecular weight.
Although those chemical amplification resist compositions are suitable as photoresist compositions for ultraviolet or far-ultraviolet irradiation, it is further necessary for them to provide for characteristics required from the viewpoint of using them.
In the case of photoresist compositions designed for use of an ArF light source, there is a proposal to introduce alicyclic hydrocarbon moieties into resins for the purpose of providing dry etching resistance. However, the introduction of alicyclic hydrocarbon moieties renders the resin extremely hydrophobic, thereby yielding such a detriment that the photoresist is difficult to develop with an aqueous solution of tetramethylammonium hydroxide (abbreviated as TMAH hereinafter) hitherto widely used as a resist developing solution or peels off a substrate during development.
As a measure against the resin's hydrophobicity, mixing an organic solvent, such as isopropyl alcohol, into a developer was considered and met with a qualified success. However, the mixing with an organic solvent causes apprehension of swelling of resist films and makes the patterning process complex, so it cannot be always said that the problems have been solved. In an approach of improving resist, hydrophilic groups have frequently been introduced as a measure for complementing various hydrophobic alicyclic hydrocarbon moieties.
JP-A-9-73173 discloses the resist material using an acid-responsive compound that has an alkali-soluble group protected with an alicyclic group-containing structure and contains a structural unit capable of rendering the compound soluble in an alkali through elimination of the alkali-soluble group by an acid.
Further, JP-A-11-119434 offers the resist material using a resin having repeating units containing alicyclic hydrocarbons and repeating units having lactone structures as a low-cost resist material having high resolution, high sensitivity and improved dry etching resistance.
JP-A-2000-292917 discloses the resist composition using a mixture of an acid generator of triarylsulfonium salt type and an acid generator of phenacylsulfonium salt type.
In addition, JP-A-2001-294570 discloses the resist composition containing a phenacylsulfonium salt.
However, the hitherto known positive resist compositions do not produce satisfactory results on line edge roughness and pattern collapse performances in micro-photo fabrication using far ultraviolet light, notably ArF excimer laser beam.

Positive resist composition and pattern formation method using the same


A method of producing a welded steel pipe which comprises: (a) forming a steel strip having two edges in a cylindrical form so that the two edges face each other; (b) preheating the two edges of the steel strip to a temperature of a melting point or less by applying a high frequency electric current to the two edges; (c) pressing the two edges of the steel strip towards each other by contact with squeeze rolls to form a joint portion including a joint line; (d) radiating a high density energy beam sufficient to fuse a full thickness of the steel strip to a portion adjacent to a squeeze point to weld the joint portion; and (e) controlling an upset by applying the squeeze rolls sufficiently to reduce weld defects.

1. Field of the Invention
The present invention relates to a method for producing an electric-resistance-welded steel pipe, and more particularly to a method for producing an electric-resistance-welded steel pipe using a high density energy beam.
2. Description of the Related Arts
In conventional methods, a steel strip is formed into a cylindrical shape while transferring the steel strip so that both edges of the steel strip face each other. The both edges of the steel strip are welded to produce a steel pipe. Among the conventional methods, an electric-resistance-welding method is the most efficient. In the electric-resistance-welding method, a butt joint portion is heated and fused to form a fusion zone by using induction heating of high frequency electric current or applying a high frequency electric current to the butt joint portion from a contact chip. The fusion zone is pressed by squeeze rolls to remove impurities and oxides which exist in the fusion zone, thus the welding being done. However, oxides having high melting point are not removed and remain in a weld zone by oxygen in air during the heating and the fusion of the edges of the steel strip. The oxides comprise alloying elements such as Mn, Si, and Cr. The remained oxides may result in a weld defect called the "penetrator". To suppress oxidization and to obtain a high quality welded steel pipe, gas shielding is applied. The gas shielding, however, gives not sufficient effect.
A pipe-producing method using a high density energy beam such as laser beam has been developed on the background described above. The method is a welding method to fuse the edges of a steel strip under irradiation of high density energy beam. It is known that since the method avoids exposing the fused metal to atmospheric air, weld defects such as oxide inclusion are hard to generate, and high quality welded steel pipe is obtained.
The method using high density energy beam is disclosed in JP-A-3-291176 which is published on Dec. 20, 1991 and JP-B-4-18954 which is published Mar. 30, 1992 (the terms "JP-A-" and "JP-B" referred to herein signify "unexamined Japanese patent publication" and "examined Japanese patent publication", respectively). FIG. 4 shows a pipe-producing method disclosed in JP-A-3-291176. A steel strip 1 is formed into an open pipe having edges 1a and 1b. The edges 1a and 1b are heated to a temperature of from 200 to 600.degree. C. using a heat source 2 of a high frequency induction method or a high frequency resistance method. Then a high density energy beam as the second heat source 3 is radiated to a portion 1c adjacent to squeeze rolls 4a and 4b to weld the portion. The method is a complex welding method which increases the welding speed by preheating the steel strip edges using the first heat source to make up the insufficient energy of the second heat source.
The above-mentioned method aims to produce ferritic or austenitic stainless steel pipe. But secondary operation properties such as cutting, bending, press forming and forging deteriorate owing to coarsening of crystal grains in the ferritic stainless steel. The quality of the steel pipe deteriorates owing to weld decay in the austenitic stainless steel. For the above-mentioned problems, the preheating by the high frequency heat source 2 is limited to a temperature of from 200 to 600.degree. C. If, however, a size of steel pipe or a wall thickness of steel pipe increases, the increase of the welding speed cannot be expected by the preheating of a temperature of around 600.degree. C.
FIG. 5 shows a pipe-producing method disclosed in JP-B4-18954. According to the pipe-producing method, preheating is carried out by using the induction heating coil 2 as the first heat source. Upstream of a V-converging point 1d where both edges 1a and 1b of the steel strip firstly contact each other is preheated to a degree that very little fusion occurs at the edges 1a and 1b of the steel strip. The joint face 1c of the steel strip at downstream of the V-converging point 1d is welded by radiating a high density energy beam 3 as a second heat source. In a portion between the V-converging point 1d and the fusion zone by the high density energy beam, and in a portion downstream of the fusion zone, a clamping force is applied to both edges of the steel strip to a degree that both edges simply touch each other.
In this method, the place of irradiation of high density energy beam 3 is carried out at downstream of the V-converging point 1d where both edges of the steel strip contact each other for the first time. As shown in FIG. 5, however, the joint portion may open owing to spring back at downstream of the squeeze rolls 4a and 4b to induce undercut at the weld zone, or solidification cracks may generate depending on the composition of the material. The squeeze rolls 4a, 4b and the squeeze rolls 5a, 5b clamp both edges of the steel strip to a degree that both edges are simply touch each other. Such clamp of both edges, however, has been hard to technologically attain, since there appears a gap between the squeeze rolls 4a and 4b and the squeeze rolls 5a and 5b caused by spring back.

Method for producing a steel pipe using a high density energy beam


The purpose of this invention is to manufacture complex shaped Cr.sub.3 C.sub.2 /Al.sub.2 O.sub.3 components efficiently with effective cost. Chromium carbide, which is quite chemically inert at elevated temperature, is added into an alumina matrix for toughening purposes. Chromium carbide and alumina ceramic powders are mixed with binders to form a solidified suspension. The suspension is then crushed, heated, and injected into green products. Controlled solvent and thermal debinding processes are followed before performing pressureless sintering. Samples are sintered in pre-treated argon gas with minimum oxygen partial pressure, or in vacuum for controlling the phase stability and microstructure for tailoring mechanical properties. The processing parameters for injection molding, the composition design of binders and ceramic composites, and the techniques for controlling the phase transformation of chromium carbide are developed. A near-net shape complex component with minimum after machining can be manufactured. The injection molding and pressureless sintering process make the mass production possible. Optimized properties of 97.8% in the theoretical density, 500 Mpa in strength, and 5.85 MPam.sup.1/2, are obtained. These properties are greater, in comparison, than the properties of conventional alumina ceramics.

1. Field of the Invention
The purpose of this invention is to manufacture complex shaped Cr.sub.3 C.sub.2 /Al.sub.2 O.sub.3 components by an injection molding technique. Pressureless sintering or vacuum sintering is performed on the unsintered or green products to manufacture ceramic complex shaped components.
2. Cross-Reference to Related Application
Alumina has good physical and chemical properties and is currently the most widely used material for ceramics. But its inherent brittleness had lowered its dependability. In recent years, ceramic researchers had kept on improving its dependability. For example, a second phase strengthener can be added into the alumina base material which can greatly increase its toughness and improve its dependability. A second phase strengthner can include high hardness grains, bearded crystal, or plate grains. But recent research indicates that bearded crystal can cause cancer while plate grains have directional properties which should be considered and are not easy to process. Not only do the Cr.sub.3 C.sub.2 /Al.sub.2 O.sub.3 grain strengtheners overcome the above drawbacks but they are also far more convenient and economical to process in comparison with the bearded crystal or plate grains.
Since the molded shape of structural ceramic was restricted and there was no way to expand scope of its application, the application of injection molding techniques can lower the cost of the molded shape, can make mass production possible, and can produce complex-shaped and high precision products. Thus, a vacuum and pressureless sintering process and injection molding were used in this disclosure to manufacture commercial precision ceramic components.
Adding chromium carbide in the alumina base can improve the alumina's inherent brittleness and improve its dependability. There is also no transformation in the interface of Cr.sub.3 C.sub.2 /Al.sub.2 O.sub.3, and the addition of chromium carbide can simultaneously increase the strength and toughness of the resulting material, which is seldom seen in composite materials.

Manufacture of complex shaped Cr.sub.3 C.sub.2 /Al.sub.2 O.sub.3 components by injection molding technique


An adjustable RF microwave tuning post for use in an RF cavity is disclosed. It is comprised of a flexible integrally-formed hollow tuning post disposed in the RF cavity. A drive shaft extending internally of the tuning post is provided to vary the dimensions of the tuning post. The drive shaft is connected to the tuning post at the top end thereof and connected at the other end of the drive shaft to an adjusting nut. The tuning post is made flexible by the use of bellows, which in a preferred embodiment of the invention is located along the side walls thereof.

Adjustable tuning posts disposed in a microwave cavity have been used in a number of radio frequency (RF)/microwave components, such as waveguides, TEM-lines, RF filters, resonators, etc.
Generally, the adjustment of a tuning post within an RF cavity will change the electrical characteristics of the microwave device.
High-power filters which make use of tuning posts have been used for a number of years for space applications, satellites, for examples. Unfortunately, because of the power requirements as well as the wide range of operating temperatures common to space applications, filters with adjustable tuning posts have been found to cause a number of problems.
For example, even if filter components are fixed, the metals used in filters, such as aluminum, expand and contract with the large temperature changes common in space applications, thereby modifying the filter behaviour and rapidly limiting its performance capability. In addition to meeting the thermal requirements of space applications, microwave components must often be designed to take into account problems associated with the effects of Multipaction, and Passive Intermodulation Interference (PIM).
The Multipactor effect is a vacuum discharge produced by an RF field between a pair of surfaces. Electron multipaction (avalanche) is by secondary electron emission from these surfaces. For multipaction breakdown to occur, the pressure must be sufficiently low so that the mean free path is longer than electrode separation distance. Thus, electrons can readily travel between the electrodes without undergoing collisions with gas molecules. When these electrons collide with the electrodes, they release secondary electrons provided that the primary electron possesses sufficient energy and that the electrode surfaces have a secondary emission coefficient greater than one. If this occurs as the electric field passes through zero, the reversed electric field will accelerate the electrons back across the gap. If the transit time of the electrons across the gap is one half the cycle of the RF field, the secondary electrons formed by the initial electrons become primary electrons for the next half cycle to form another group of secondary electrons. In this way, large electron densities rapidly build up in the gap and breakdown results.
Another problem encountered in space applications is the risk of interference due to PIM, especially for multichannel communication systems for which the RF output power level has significantly increased over the years.
It is well-known that harmonics and intermodulation (IM) products are generated when two or more signals are applied to a nonlinear circuit element. In a practical communication system, the harmonics and intermodulation products generated by the high-power amplifiers are effectively filtered out using output transmit filters. For mobile satellite applications, a very high transponder gain is required and high-rejection output filters providing, for example, some 100 dB suppression in the receive band are needed.
Passive components and materials used in communication satellites can exhibit nonlinear voltage/current characteristics and can generate harmonics and intermodulation products. Since these spurious signals are generated by passive components, the term Passive Intermodulation (PIM) is attributed to such spurious signals. Although these signals are produced at very low levels, the PIM signals falling into the receive frequency band can cause serious interference problems if they are generated after the output high-rejection filters in the antennas or by surrounding structures on the spacecraft, and if they are picked up by the communication system.
PIM performance is very critical for mobile satellite applications. Due to the low frequency of operation (UHF, L-Band or S-Band), waveguide technology leads to unacceptably large and heavy components, and coaxial technology must be used instead. However, very high current densities, which enhance the risk of PIM generation, exist on the centre conductor of coaxial structures.
Metal-insulator-metal (MIM) junctions that are exposed to multi-carrier signals can result in nonlinear behaviour which can cause PIM. These junctions are caused by oxides forming between metallic surfaces. Rough surfaces can prevent a good metal-to-metal contact and can also create nonlinear junctions that cause PIM. Very high-pressure contacts, or else noncontacting interfaces using dielectric insulators, are mandatory to reduce the risk of PIM. This is particularly critical at the mating interfaces of coaxial high-power components, for which a good contact must be maintained over a wide operating temperature range. Such devices include, for example, coaxial quarter-wave microwave filters.