Fuel cell catalyst layers, and related systems and methods are disclosed.

A fuel cell can convert chemical energy to electrical energy by promoting electrochemical reactions of two reactants.
One type of fuel cell includes a cathode flow field plate, an anode flow field plate, a membrane electrode assembly disposed between the cathode flow field plate and the anode flow field plate, and diffusion layers disposed between the cathode flow field plate and the anode flow field plate. A fuel cell can also include one or more coolant flow field plates disposed adjacent the exterior of the anode flow field plate and/or the exterior of the cathode flow field plate.
Each reactant flow field plate has an inlet region, an outlet region and open-faced channels connecting the inlet region to the outlet region and providing a way for distributing the reactants to the membrane electrode assembly.
The membrane electrode assembly usually includes a solid electrolyte (e.g., a proton-exchange membrane) between a first catalyst and a second catalyst. One diffusion layer is between the first catalyst and the anode flow field plate, and another diffusion layer is between the second catalyst and the cathode flow field plate.
During operation of the fuel cell, one of the reactants (the anode reactant) enters the anode flow field plate at the inlet region of the anode flow field plate and flows through the channels of the anode flow field plate toward the outlet region of the anode flow field plate. The other reactant (the cathode reactant) enters the cathode flow field plate at the inlet region of the cathode flow field plate and flows through the channels of the cathode flow field plate toward the cathode flow field plate outlet region.
As the anode reactant flows through the channels of the anode flow field plate, some of the anode reactant passes through the anode diffusion layer and interacts with the anode catalyst. Similarly, as the cathode reactant flows through the channels of the cathode flow field plate, some of the cathode reactant passes through the cathode diffusion layer and interacts with the cathode catalyst.
The anode catalyst interacts with the anode reactant to catalyze the conversion of the anode reactant to reaction intermediates. The reaction intermediates include ions and electrons. The cathode catalyst interacts with the cathode reactant and the anode reaction intermediates to catalyze the conversion of the cathode reactant to the chemical product of the fuel cell reaction.
The chemical product of the fuel cell reaction flows through a diffusion layer to the channels of a flow field plate (e.g., the cathode flow field plate). The chemical product then flows along the channels of the flow field plate toward the outlet region of the flow field plate.
The electrolyte provides a barrier to the flow of electrons and reactants from one side of the membrane electrode assembly to the other side of the membrane electrode assembly. However, the electrolyte allows ionic reaction intermediates (e.g., protons) to flow from the anode side of the membrane electrode assembly to the cathode side of the membrane electrode assembly.
Therefore, the ionic reaction intermediates can flow from one side of the membrane electrode assembly to the other side of the membrane electrode assembly without exiting the fuel cell. In contrast, the electrons flow from the anode side of the membrane electrode assembly to the cathode side of the membrane electrode assembly by electrically connecting an external load between the anode flow field plate and the cathode flow field plate. The external load allows the electrons to flow from the anode side of the membrane electrode assembly, through the anode flow field plate, through the load and to the cathode flow field plate, and the cathode side of the membrane electrode assembly.
Because electrons are formed at the anode side of the membrane electrode assembly, the anode reactant undergoes oxidation during the fuel cell reaction. Because electrons are consumed at the cathode side of the membrane electrode assembly, the cathode reactant undergoes reduction during the fuel cell reaction.
For example, when molecular hydrogen and molecular oxygen are the reactants used in a fuel cell, the molecular hydrogen flows through the anode flow field plate and undergoes oxidation. The molecular oxygen flows through the cathode flow field plate and undergoes reduction. The specific reactions that occur in the fuel cell are represented in equations 1-3.H2→2H++2e−  (1)½O2+2H++2e−→H2O  (2)H2+½O2→H2O  (3)
As shown in equation 1, the molecular hydrogen forms protons (H+) and electrons. The protons flow through the electrolyte to the cathode side of the membrane electrode assembly, and the electrons flow from the anode side of the membrane electrode assembly to the cathode side of the membrane electrode assembly through the external load. As shown in equation 2, the electrons and protons react with the molecular oxygen to form water. Equation 3 shows the overall fuel cell reaction.
In addition to forming chemical products, the fuel cell reaction produces heat. One or more coolant flow field plates are typically used to conduct the heat away from the fuel cell and prevent it from overheating.
Each coolant flow field plate has an inlet region, an outlet region and channels that provide fluid communication between the coolant flow field plate inlet region and the coolant flow field plate outlet region. A coolant (e.g., liquid de-ionized water) at a relatively low temperature enters the coolant flow field plate at the inlet region, flows through the channels of the coolant flow field plate toward the outlet region of the coolant flow field plate, and exits the coolant flow field plate at the outlet region of the coolant flow field plate. As the coolant flows through the channels of the coolant flow field plate, the coolant absorbs heat formed in the fuel cell. When the coolant exits the coolant flow field plate, the heat absorbed by the coolant is removed from the fuel cell.
To increase the electrical energy available, a plurality of fuel cells can be arranged in series to form a fuel cell stack. In a fuel cell stack, one side of a flow field plate functions as the anode flow field plate for one fuel cell while the opposite side of the flow field plate functions as the cathode flow field plate in another fuel cell. This arrangement may be referred to as a bipolar plate. The stack may also include monopolar plates such as, for example, an anode coolant flow field plate having one side that serves as an anode flow field plate and another side that serves as a coolant flow field plate. As an example, the open-faced coolant channels of an anode coolant flow field plate and a cathode coolant flow field plate may be mated to form collective coolant channels to cool the adjacent flow field plates forming fuel cells.


A fuel tank includes a body defining a fuel holding cavity therein, a spill box attached to the body, a fill port for fluid communication with the fuel holding cavity, the fill port being disposed within the spill box, and an accumulation box disposed on a top of the body and defining a fuel overflow cavity therein that is in fluid communication with the fuel holding cavity. Methods of retrofitting a fuel tank and venting a fuel tank are also described.

Prior art fuel tanks for generators are known, and are suitable for their intended purposes. However, prior art fuel tanks have certain drawbacks. For example, at least some prior art fuel tanks, when tilted or subjected to a rising temperature when filled with fuel, may cause at least some of the fuel to spill out of a fill port. Therefore, improvements to prior art fuel tanks are desirable.


A high resolution observation apparatus of material features with a photon scanning microscope. The apparatus detects evanescent light which depends on surface feature of a sample and detects detailed distribution of optical constants of the sample. Namely, the apparatus makes it possible to detect detailed distribution of transparency or refractive index within a sample material in higher resolution than the wavelength of the incident light which is irradiates to the sample material coated on the top surface of the optical prism. The apparatus includes means for maintaining a predetermined distance between the sample and an optical fiber tip or means for detecting a positioning signal. Further, it becomes possible to detect fluorescent condition of the sample.

This invention relates to a high resolution observation apparatus with a photon scanning microscope for detecting evanescent light which depends on material features of a sample by irradiating light to the sample at a total reflection angle.
As shown in FIG. 2, a photon scanning microscope conventionally, for example as described in "Kougaku" Vol. 20, No. 3 p.p. 134-141, generates the light which is emitted from a semiconductor laser optical source 8 and which has a single wavelength to be incident to a prism 1 at a total reflection angle, and detects evanescent light which is emitted depending on the topography of a surface of a sample 2 on the prism 1 by an optical fiber probe 3 with a minute opening and an optical detecting system 10.
Then, the optical fiber probe 3 scans the sample in x and y-axis directions while controlling the z-axis direction so that the detected evanescent light should be constant, and the control signal and the scanning signals are processed, and thereby a three-dimentional shape of the sample surface is determined. Moreover, only light having the same wavelength as of the incident light that is detected.
However, the photon scanning microscope is conventionally used for observing the topography of the sample surface and the observation is performed with the precondition that the sample is scanned so that the detected evanescent light is constant and that the evanescent light depends on the distance between the sample surface and the probe tip.
Therefore, if the sample includes materials with different transparency or different refractive index from the rest of the sample, incorrect topography is observed. Moreover, it is essentially impossible to detect the difference in transparency or the difference in refractive index within the sample.
For example, in FIG. 3A, the sample 22 has a wave shape surface 22a and has an uniform optical constant, such as transparency or refraction index. In this case, when light 21 is incident to a prism 1 at a total reflection angle and an evanescent light emitted from the sample 2 by the incident light 21 is detected by an optical fiber tip 3, a locus 23 of the optical fiber tip results in a flat shape after scanning the optical fiber tip above the sample surface with controlling the z-axis direction so that the detected evanescent light is constant. The conventional photon scanning microscope, therefore, can not observe the sample surface 22a correctly if the sample has a uniform optical constant.
In another example shown in FIG. 3B, the sample 24 has a flat surface and has singular regions 24a which have a different optical constant, such as transparency or refraction index, from the remaining regions 24b of the sample 24. In this case, when light 21 is incident to a prism 1 at a total reflection angle as the same manner in the above example, a locus 25 of the optical fiber tip results in a wave shape after scanning the optical fiber tip because the singularity of the optical constant within the sample affects the evanescent light emitted by the incident light. The conventional photon scanning microscope can not observe the sample surface correctly, either, if the sample has some singular region of optical constants even if it has a flat surface.
Further, only the evanescent light emitted by the wavelength of the incident light is detected because the detected light has the same wavelength as that of the incident light. It is, therefore, impossible to observe fluorescent condition of the sample in other wavelength than that of the incident light.
Moreover, in a general optical observer, the resolution of observation is limited by optical diffraction limit. Namely, the resolution is at the same level as that of the wavelength of the incident light.

High resolution observation apparatus with photon scanning microscope


A data center includes a hot stack for exhausting heated air from the data center and a cold stack that cools intake air relative to the environment surrounding the data center. The temperature difference between air in the cold stack and the environment creates an airflow through the cold stack and into a cold aisle. This pressurizes the cold aisle, causing air to flow from the cold aisle across computing assets to a lower-pressure hot aisle. While flowing across the computing assets, the air absorbs heat generated by the computing assets. The temperature difference between the heated air and air outside the data center causes the heated air to flow through the hot stack and outside of the data center.

This invention relates generally to data centers, and more particularly to efficient cooling of computing devices within a data center.
Heat removal is an important consideration in computer system and data center design. As the number of computing assets deployed in a data center increases, heat generated by electronic components in the computing assets during operation also increases. Because the reliability of computing assets used by the data center decreases if they operate at a high temperature over time, a portion of the data center's power is used for cooling electronics in the computing assets. However, as the number of computing assets included in a data center increases, a greater portion of the power consumed by the data center is used to cool electronics within the computing assets.
Conventionally, computing assets in a data center are individually equipped with cooling systems to dissipate heat produced during operation. Commonly, each server includes a fan for dissipating heat generated during operation. However, these internal fans generally consume about 10%-15% of the power used by the computing assets, and also produce heat during operation, limiting their effectiveness. Additionally, a room in the data center housing the computing assets may also be cooled using methods such as air conditioning, using additional power for cooling.

This patent is subject to a terminal disclaimer.

Cooling computing assets in a data center using hot and cold stacks


The solid-state image pick-up device (1) includes a photodetecting section (10) which is formed by two-dimensionally aligning M×N (M and N are integers not less than 2) pixels in M rows and N columns and has a rectangular photodetecting surface. This solid-state image pick-up device (1) is supported rotatably by a rotation controlling section, and the rotation controlling section controls the rotation angle of the solid-state image pick-up device (1) so that the row direction or column direction of the photodetecting section (10) becomes parallel to the movement direction (B) of the solid-state image pick-up device (1) in one of the two imaging modes, and both of the row direction and the column direction of the photodetecting section (10) tilt with respect to the movement direction (B) of the solid-state image pick-up device (1) in the other imaging mode of the two imaging modes.

1. Field of the Invention
The present invention relates to a medical X-ray imaging system.
2. Related Background Art
In medical X-ray photography, in recent years, instead of X-ray sensitive films, X-ray imaging systems using X-ray image pick-up devices have been widely used. Such an X-ray imaging system is convenient such that unlike the X-ray photosensitive film, development is not necessary, and an X-ray image can be confirmed in real time, and is also superior in terms of data storage stability and handling easiness. In X-ray photography for dental diagnosis, such X-ray imaging systems have been increasingly used in various imaging modes for panoramic radiography, cephalometric radiography, and CT.
In the case of a dental X-ray imaging system, the shape of an imaging region required for the X-ray image pick-up device may differ depending on various imaging modes described above. In other words, an imaging region to be used for CT (hereinafter, referred to as a first imaging region) is required to have a sufficient width in the lateral direction, and also required to have a certain width in the up-down direction. An imaging region to be used for panoramic radiography or cephalometric radiography (hereinafter, referred to as a second imaging region) is required to have a sufficient width in the up-down direction. However, when a plurality of X-ray image pick-up devices satisfying these requirements are prepared, the X-ray imaging system becomes large in size, or when changing the imaging mode, the X-ray image pick-up device must be changed and this is troublesome. Therefore, preferably, the requirements on the first and second imaging regions are satisfied by one X-ray image pick-up device.
For example, in International Publication No. WO2006/109808, an X-ray image pick-up device for dental diagnoses having an X-ray generator and an X-ray detector is disclosed. In this X-ray image pick-up device, to selectively generate an X-ray slit beam and an X-ray broad beam, an X-ray is irradiated via a narrow-groove-like slit or a rectangular slit. The X-ray slit beam is used for panoramic radiography or cephalometric radiography, and the X-ray broad beam is used for CT, etc. WO2006/109808 describes that both of the X-ray slit beam which passed through the narrow-groove-like slit and the X-ray broad beam which passed through the rectangular slit are imaged by one solid-state image pick-up device.
As a solid-state image pick-up device to be used for such a medical X-ray imaging system, solid-state image pick-up devices using the CMOS technique are known, and among these, a solid-state image pick-up device using a passive pixel sensor (PPS) type is known. The solid-state image pick-up device using the PPS type has a photodetecting section which includes PPS-type pixels including photodiodes for generating charges corresponding to incident light intensities are two-dimensionally aligned in M rows and N columns, and accumulates charges generated in the photodiode in response to light incidence on each pixel into a capacitive element in an integrating circuit, and outputs a voltage value corresponding to the accumulated charge.
Generally, output terminals of the M pixels in each column are connected to an input terminal of the integrating circuit provided corresponding to the column via a reading wire provided corresponding to the column. Charges generated in the photodiodes of the respective pixels are input into the integrating circuit through the reading wires corresponding to the relevant column from each row successively from the first row to the M-th row, and from the integrating circuit, a voltage value corresponding to the charges is output.


Cables having non-stripping, or buffer-free, optical fibers are disclosed. The cables each have a buffer-free optical fiber including a core, cladding layer and a thin protective coating enclosing the cladding and having an overall diameter of 125 μm. This protective coating protects the cladding and core from moisture and provides structural integrity to prevent physical damage to the fiber during installation and termination with connectors. Embodiments of this non-stripping fiber do not require removal of a buffer layer during field termination so connections can be formed using simple cleaving techniques. As such, the field termination process for embodiments is simplified compared with conventional approaches.

1. Field of the Invention
The invention relates generally to optical fibers and cables.
2. Description of Prior Art and Related Information
Conventional optical fibers require field termination when deployed. Field termination is a cumbersome process in that it requires stripping an outer buffer layer typically found on conventional optical fibers and cleaning the stripped surface with alcohol or other solvent to remove any buffer coating and remaining debris. Since the buffer coating is strongly adhered to the glass cladding of a typical optical fiber, stripping this outer buffer layer can prove difficult and time consuming. In addition, this stripping process could potentially damage the optical fiber which may cause system failure.


A composition and process for electroplating a conductive metal layer onto the surface of a non-conductive material is disclosed. The composition and process utilizes an obvious dispersion traditional carbon black particles and highly conductive carbon black particles. The mixture of carbon blacks provides optimum dispersion and electroplating properties.

Printed wiring boards (also known as printed circuit boards) are generally laminated materials comprised of two or more plates or foils of copper, which are separated from each other by a layer of nonconducting material. Although copper is generally used as the electroplating metal in printed wiring boards, those skilled in the art will recognize that other metals such as nickel, gold, palladium, silver and the like can also be electroplated. The nonconducting layer or layers are preferably an organic material such as an epoxy resin impregnated with glass fibers, but may also comprise thermosetting resins, thermoplastic resins, and mixtures thereof, with or without reinforcing materials such as fiberglass and fillers.
In many printed wiring board designs, the electrical pathway or pattern requires a connection between the separated copper layers at certain points in the pattern. Through holes are formed in printed circuit boards in order to establish connection between the circuit layers at certain points in the board to produce the desired electrical pattern. This is usually accomplished by drilling holes at the desired locations through the copper layers and the non-conducting layers, and then connecting the separate circuit layers by metallizing the through holes (i.e., coating the inner surface of the drilled or punched through hole with a conductive metal). The hole diameters of PCBs generally range from about 0.15 mm to about 10.0 mm, more typically from about 0.3 mm to about 1.0 mm.
While electroplating is a desirable method of depositing copper and other conductive metals on a surface, electroplating cannot be used to coat a nonconductive surface, such as an untreated through hole. It has thus been necessary to treat the through hole with a conductive material to make it amenable to electroplating. One process for making the through hole bores electrically conductive, is to physically coat them with a conductive film. The coated through holes are conductive enough to electroplate, but typically are not conductive and sturdy enough to form the permanent electrical connection between the circuit layers at either end of the through hole. The coated through holes are then electroplated to provide a permanent connection. Electroplating lowers the resistance of the through hole bore to a negligible level, which will not consume an appreciable amount of power or alter circuit characteristics. One advantageous way of preparing the through hole walls for electroplating utilizes a liquid carbon dispersion. The steps of this process are discussed briefly below.
First, surfaces of the through holes are drilled and deburred. In the case of multilayer printed circuit boards, it may also be desirable to subject the boards to a desmear or etchback operation to clean the inner copper interfacing surfaces of the through holes. Such methods are well known to those skilled in the art.
Then, the printed wiring board is preferably subjected to a precleaning process in order to place the printed wiring board in condition for receiving the liquid carbon black dispersion. After the application of the cleaner, the PWB is rinsed in water to remove excess cleaner from the board and then contacted with a conditioner solution. The conditioner solution is used to ensure that substantially all of the hole wall glass/epoxy surfaces are properly prepared to accept a continuous layer of the subsequent carbon black particles. See for example U.S. Pat. No. 4,634,691, to Lindsey, the subject matter of which is herein incorporate by reference in its entirety, which describes a suitable conditioner solution.
The liquid carbon dispersion is next applied to or contacted with the conditioned PWB. This dispersion contains three critical ingredients, namely, carbon black, one or more surfactants capable of dispersing the carbon and a liquid dispersing medium such as water. The preferred methods of applying the dispersion to the PCB include immersion, spraying or other methods of applying chemicals that are typically used in the printed circuit board industry. A single working bath is generally sufficient for applying this carbon dispersion; however, more than one bath may be used for rework or other purposes.
The carbon covered board is then subjected to a step where substantially all (i.e., more than about 95% by weight) of the water in the applied dispersion is removed and a dried deposit containing carbon is left in the holes and on other exposed surfaces of the nonconducting layer. To insure complete coverage of the hole walls, the procedure of immersing the board in the liquid carbon dispersion and then drying may be repeated.
The carbon (black) covered board is next optionally subjected to an additional graphite treatment yielding the deposition of a graphite layer on top of the carbon layer. In this instance, the carbon (black)-coated PWB board is preferably first contacted with a conditioner solution, which is used to promote subsequent adsorption of the dispersed graphite particles on the carbon (black) layer. After the application of this optional conditioner solution, the PWB is subsequently rinsed with water to remove excess conditioner from the board. The board may then be contacted with the liquid graphite dispersion or suspension. The board is then subjected to a step where substantially all (i.e., more than about 95% by weight) of the water in the applied dispersion is removed and a dried graphite deposit is left in the holes over the carbon (black) deposit and on other exposed surfaces of the nonconducting layer.
The steps of this process are described in more detail, for example, in U.S. Pat. No. 4,619,741, the subject matter of which is herein incorporated by reference in its entirety. Various modifications and refinements to this process are set forth in U.S. Pat. Nos. 4,622,107, 4,622,108, 4,631,117, 4,684,560, 4,718,993, 4,724,005, 4,874,477, 4,897,164, 4,964,959, 4,994,153, 5,015,339, 5,106,537, 5,110,355, 5,139,642, and 5,143,592, the subject matter of each of which is herein incorporated by reference in its entirety.
A continuing challenge in the art of carbon-based direct metallization is increasing the conductivity of the carbon coating that is deposited on the nonconductive surface to achieve faster electroplating, to allow electroplating over larger areas, and to provide other benefits.
Various methods have been suggested for increasing the conductivity of the carbon coating that is deposited. For example, U.S. Pat. No. 5,476,580 to Thorn et al., the subject matter of which is herein incorporated by reference in its entirety proposed to modify carbon (graphic) by adding surfactants or binders to the dispersion. U.S. Pat. No. 5,759,378 to Ferrier et al., the subject matter of which is herein incorporated by reference in its entirety, modifies the carbon black itself to reduce the resistivity of the carbon layer or improve the uniformity of the carbon layer on the non-conductive surface and/or the uniformity of the dispersion creating the carbon layer, increase the activity of the carbon surface toward plating, or combinations thereof.
Ferrier et al. describe various modifications to the carbon black, including treating the carbon with a dye prior to incorporating it in the dispersion composition, treating the carbon with various metals such that the metals are either absorbed onto the surface of the carbon or reduced into the surface of the carbon, and oxidation of the surface of the carbon, such as by chemical oxidation of the carbon, i.e., mixing the carbon with a solution of nitric acid for a time and at a temperature effective to appropriately oxidize the surface of the carbon. Ferrier et al. disclose that the carbon dispersion formed with the modified carbon is more uniform or the carbon forms a more uniform, more adherent, more active or less resistive coating on the non-conductive surface. These changes in the dispersion and/or the carbon coating, which resulted from the modification of the carbon itself, manifest themselves in improved coverage of the non-conductive surface with the plated metal, improved adhesion of the plated metal to the non-conductive surface, increased plating propagation rate, decreased resistance of the carbon coated non-conductive surface, or decreased plating time necessary to achieve complete coverage of the non-conductive surface with the plated metal.
However, there remains a need in the art for additional improvements in the conductivity of the carbon deposited on the non-conductive substrate.

Process for preparing a non-conductive substrate for electroplating


A composite synchronizing signal separation circuit in which separation of the composite synchronizing signal by a digital circuit is realized and such trouble as adjusting the time constant is not needed and a phase shift is reduced: a horizontal interruption receiving circuit 1 which is reset by a timing pulse signal at the time point of 3/4 from the starting time point of one horizontal synchronizing period, and separates and outputs a horizontal synchronizing signal HD from a composite synchronizing signal SYNC; a schedule counter circuit 2 which is reset by the horizontal synchronizing signal HD and outputs count value while counting up to a predetermined value in one horizontal synchronizing period; a timing decoding circuit 3 which decodes the count value and respectively outputs timing pulse signals at the time points of 1/4, 1/2 and 3/4 from the starting time point of one horizontal synchronizing period; and a vertical interruption receiving circuit 4 which samples the composite synchronizing signal SYNC by these signals and outputs a vertical synchronizing signal VD.

1. Field of the Invention
The present invention relates to a composite synchronizing signal separation circuit, and more particularly, to a composite synchronizing signal separation circuit of a digital circuit system, which separates a horizontal synchronizing signal and a vertical synchronizing signal from an inputted composite synchronizing signal, and further, generates a field discriminating signal.
2. Description of the Related Art
FIG. 1 is a circuit diagram showing a configuration of a composite synchronizing signal separation circuit according to an analog circuit system disclosed, for example, in "Basic Image Signal Processing", issued on Apr. 1, 1987 by CQ Publishing Co. as an example of the prior art.
In FIG. 1, reference symbols 6a, 6b, 6c respectively designate resistors, 7 designates a capacitor and 8 designates a comparator.
A composite synchronizing signal SYNC is inputted to a minus-side input terminal of the comparator 8 via the resistor 6a. Between the resistor 6a and the minus-side input terminal of the comparator 8, the other end of the capacitor 7 whose one end is connected to an earth potential is connected. The capacitor 7 and the resistor 6a constitute an integration circuit. The resistors 6b and 6c are connected in series, whose one end is connected to a power potential and the other end is connected to the earth potential to constitute a potential dividing circuit. Potential generated at a connecting point of the resistors 6b and 6c is given to a plus-side input terminal of the comparator 8 as a threshold value.
The operation of such conventional composite synchronizing signal separation circuit by an analog circuit is described with reference to a timing chart of FIG. 2 showing the operating state.
The composite synchronizing signal SYNC which is to be inputted is, as shown in FIG. 2 (a), composed of a relatively minor cycle negative-polarity horizontal synchronizing signal and a relatively major cycle negative-polarity vertical synchronizing signal, and during the period of vertical synchronizing signal, the horizontal synchronizing signal is in a positive polarity. Though one horizontal synchronizing period is indicated by fH, before and after the vertical blanking time including the negative-polarity vertical synchronizing signal, the horizontal synchronizing signal is 1/2 of the original one horizontal synchronizing period fH.
When such composite synchronizing signal SYNC is inputted to the integration circuit constituted by the resistor 6a and the capacitor 7, a saw tooth integration wave-form signal SA as shown in FIG. 2 (b) is outputted. The integration wave-form signal SA is inputted to the minus-side input terminal of the comparator 8, and when it is above a threshold potential inputted to the plus-side input terminal of the comparator 8, the signal shaped into a high level is outputted and when it is below, the signal shaped into a low level is outputted from the comparator 8 as shown in FIG. 2 (c). The output signal from the comparator 8 is the vertical synchronizing signal VD.
In the conventional composite synchronizing signal separation circuit as mentioned above, since the vertical synchronizing signal is separated by the analog integration circuit, the time constant of the integration circuit constituted by the resistor and the capacitor must be adjusted, and there was a possibility that a phase shift may be occurs between the horizontal synchronizing signal and the vertical synchronizing signal, by the level of the composite synchronizing signal SYNC which is to be inputted and ambient temperature or the like of the apparatus.

Composite synchronizing signal separation circuit


The present invention discloses a fluid filter for screening carbon-microparticles exhausted from diesel engines, such filter has two types of structure, i.e. the plate type and the preferable tube type, which includes plurality of multilayer corrugated filtering rings and flat filtering rings, a central tube, and an outer casing; the innermost layer of the flat filtering rings is welded onto the central tube, and the outermost layer of the flat rings is welded onto the outer casing; the multi-layer corrugated filter rings are coaxially alternated within the flat filtering rings and formed with a zigzag manner, wherein side edges of each of the corrugated filtering rings are respectively welded onto neighboring flat filtering rings so as to form a continuous filter core with ‘Z’ shaped side endings, wherein two sides of the Z shaped side endings of said filter core are alternatively applied as fluid inlet and fluid outlet.

1. Field of Invention
The present invention relates to fluid filter, and more particularly, relates to a kind of fluid filter for screening micro-particles of diesel exhaust gas in practices.
2. Description of Related Arts
It is rather common to separate fluid into different phases for a variety of purposes. In order to successfully complete gas/solid separation, liquid/solid separation, and/or gas/liquid separation for fluid, leaf filters, bag filters, tube filters as well as pleat filters have been extensively employed in a range of applications respectively for filtering different type of fluids.
On the other hand, diesel engines applied in vehicles, industrial machineries, construction machineries, agriculture tools, and vessels unexceptionally discharge exhaust gas containing micro-size particles thus causing serious air pollution. However, there are no successful fluids filters have been introduced into the market for outstandingly filtering such microparticles. For example, the porcelain filters are not breathable, and are widely complained with significant fluid pressure drop, lower carrying capacity; the bag filters prepared by metal wool, the plead filters and the tube filters have are complained of the smaller size of serviceable area, bulky and inefficiency.


An engine mount assembly includes a housing, an inertia track received in the housing and an elongated fluid damped first path that is adapted to communicate with an associated first fluid chamber on a first side and an associated second fluid chamber on a second side. A non-damped second path is adapted to communicate with the associated first and second fluid chambers. A decoupler is received in the housing, an idle diaphragm in the housing that selectively controls communication between the first and second fluid chambers to selectively alter the damping. First and second ports in the housing communicate with the decoupler and the idle diaphragm, respectively. A first solenoid selectively controls fluid flow through the first port and a second solenoid selectively controls fluid flow through the second port.

This disclosure relates to a damper assembly and specifically a multi-stage switchable inertia track assembly.
Automotive engineers frequently use hydraulically damped elastomeric powertrain mounts to control shake and vibration responses resulting from various sources such as road inputs. This commonly comes in the form of a rubber isolator containing a hydraulic fluid cavity which acts as a pump when excited by vibration. The pumped fluid oscillates through a tube called an inertia track which creates a fluid resonance system and associated damping to dissipate the vibration energy and reduce the shake response. It is often desired to have a "bypass valve" designed into the fluid system to allow the pumped fluid to bypass the inertia track and flow directly into a low pressure reservoir under certain conditions, typically low amplitude vibrations, such as engine idle speed inputs, where isolation rather than damping is preferred to eliminate vibration. This bypass valve usually takes the form of a simple rubber disc or other flat shape, fitted between two perforated rigid forms, such as pierced metal plates, which is positioned to provide a short, direct route to the low pressure reservoir. Clearance between the thickness of the disc and the spacing of the perforated plates permits unimpeded flow between the pump chamber and low pressure reservoir for small vibration inputs, while effectively sealing the pathway and forcing the fluid to flow through the inertia track during high amplitude vibration. The disc or other shape that redirects fluid flow depending on the amplitude of the vibration input is referred to as the decoupler.
The basic technology for switchable hydraulic engine mounts has been known in the industry for several years, and commonly owned published applications WO2009105768A1 and WO2010/080630 show and describe representative engine mount assemblies. Physical switching of a hydraulic mount from a fluid damped state to a non-damped state by way of opening and closing a port is well understood. However, there are multiple methods by which this can be achieved.
Most vacuum actuated hardware is mounted externally for ease of manufacture. This external mounting tends to reduce the efficiency of the mount response. Most conventional designs use a diaphragm that encloses a volume and forms an air spring under the diaphragm and attached to an external port. Opening and closing this external port is the method used to "switch" the mount state, i.e., the stiffness or damping response. In the switch "open" state, air can be pumped to atmosphere from the volume. For example, the hydraulic engine mount has a low bearing spring stiffness with the open switch (the volume is open to atmosphere) and the engine mount damps or insulates idling vibrations (low amplitude, high frequency). In the switch "closed" state, the air in the volume acts as a stiff spring because the volume is closed or sealed and the damping fluid is transferred back and forth between a first or working fluid chamber and a second or compensating fluid chamber to damp high amplitude, low frequency vibrations. The air spring (closed volume) created by the closed port reduces the pressure of the fluid that would otherwise be pumped through the inertia track, as some of the fluid pressure is used to compress the air spring.
As with most switchable hydraulic engine mounts, this mount is intended to suspend the powertrain, provide damping to powertrain motion, control the powertrain travel, and isolate the powertrain from the vehicle chassis. The switch mechanisms in multi-state mounts allow the mount to switch among four states. Two of the states allow the fluid effect of the mount to be decoupled from compliance vibrations, and the other two states adjust the damping and frequency response of the mount.
A need exists for an improved switchable inertia track assembly, an associated method of packaging same, a design that functions in the same manner as a vacuum actuated multistate mount, but instead of vacuum, uses solenoids to switch the states, and also functions as a decoupled hydromount if there is an electronic failure.

Multi-state electronically switchable engine mount assembly


Methods and associated kits for use in selectively conditioning and remineralizing teeth. An exemplary method comprises the steps of applying a conditioning composition to one or more of a person's teeth, and applying a remineralizing composition to the person's teeth. The conditioning composition includes a conditioning agent, and the remineralizing composition includes a remineralizing agent comprising calcium ions and/or fluoride ions. The conditioning composition may be applied prior to or after application of the remineralizing composition. In one embodiment, both the conditioning composition and the remineralizing composition include different remineralizing ions (e.g., one including calcium, one including fluoride).

1. The Field of the Invention
The present invention is in the field of compositions, kits, and methods for cleaning and remineralizing a person's teeth.
2. The Relevant Technology
Virtually all people desire white or whiter teeth. To achieve this goal, people often have their teeth chemically bleached, which has become very popular in recent years. Even so, bleaching with peroxides (a typical active bleaching agent within a bleaching composition) has been shown to affect the surface morphology of enamel. In addition, studies are now showing that bleaching can have a negative impact on the micro and nano hardness of enamel. Both of these effects are believed to be caused by demineralization of the enamel during the tooth whitening process. Studies have also shown however, that the condition of the enamel typically improves to a condition near what it was before the bleaching treatment within a couple of weeks after bleaching has ended. It is believed that this occurs because the natural oral environment provides fluoride, calcium, and other mineral ions which allow this recovery to occur.
Although improvement seems to occur in typical cases, there is no guarantee that all of the necessary materials and/or ions are present in any particular person's saliva during this repair time. For example, there may be other materials and/or ions present in the saliva that might interfere and cause some randomization to the repair. Furthermore, the extent of improvement of any given individual may vary based on dietary differences, mineral concentrations in drinking water, whether the person smokes, or other factors affecting the environment within the mouth and the concentrations of components within the person's saliva. In addition, during the time in which the enamel surface is weakened and before repair can occur naturally, deterioration to the enamel surface may be more likely to occur as a result of bacteria and other microbes present within the oral cavity.
Other treatments (e.g., orthodontic procedures) are also known to result in demineralization and weakening of the enamel of a patient's teeth. In the case of orthodontic treatments, it is often difficult to thoroughly brush, floss, and otherwise care for the teeth and gum tissue while orthodontic appliances are in place. In addition, orthodontic brackets necessarily cover a portion of the tooth enamel as they are bonded to the tooth surface for several months or longer (e.g., sometimes years), making care of the underlying and surrounding enamel and other tissues very difficult. As a result, demineralization and weakening of the enamel is often an undesirable side effect of orthodontic treatment.

Methods and kits for cleaning and remineralizing teeth


It is a first aspect of the present invention to provide a scanning device that includes a first imaging device adapted to convert contents of a first surface of a medium to a digital representation of the contents of the first surface of the medium, a scanning path adapted to guide the medium adjacent to the first imaging device, a first output path for guiding the medium to a first output tray, the first output path connected to the scanning path, a second output path for guiding the medium to a second output tray, the second output path connected to the scanning path, and a diverter guide adapted to direct the medium from the scanning path to one of the first output path and the second output path.

Typical Automatic Document Feeder (ADF) designs for scanning devices consist of "C" shaped paper path. A "C" shaped paper path allows a user to input a document face up into an input tray near the top of the scanning device and exit face down in an output tray below the input tray. The ADF would be attached to a scanning device that would scan the front side of the image as it passes to the exit area. One main advantage of this style of paper path is a compact design. Customers typically have limited space for a scanner device and thus require a small, but efficient design. One major limitation for this design is paper feed reliability.
The paper path can be designed to handle normal paper types effectively, but it is difficult to feed a wider range of media reliably. Typically, users desire to feed many different media types, sizes, weights, and thicknesses through a scanner ADF. This requirement would only be used periodically, as the majority of scan jobs involves normal paper types. One way to address this problem is to provide an ADF with a straight, short media path. The ADF would contain more than one imaging unit or scan head. This would allow the user to scan both sides of the media at the same time. The straight media path is very short and there are no major bends that the media encounters. The media is typically input on one side on top of the scan device and then exits to the opposite side. One drawback to this design is an increased overall footprint, specifically in terms of scanner width (or depth). This occurs because the output tray must extend far enough to support the recently scanned media.
Therefore, it would be preferable to provide a user the ability to scan a variety of media types without damaging the scanned objects while maintaining a small, compact form factor. Accordingly, the present invention is designed to overcome the shortcomings in current market products.


A normally-off compound semiconductor transistor includes a heterostructure body and a gate stack on the heterostructure body. The heterostructure body includes a source, a drain spaced apart from the source, and a channel for connecting the source and the drain. The channel includes a first two-dimensional charge carrier gas of a first polarity arising in the heterostructure body due to piezoelectric effects. The gate stack controls the channel in a region of the heterostructure body under the gate stack. The gate stack includes at least one III-nitride material which gives rise to a second two-dimensional charge carrier gas of a second polarity opposite the first polarity in the gate stack or in the heterostructure body under the gate stack due to piezoelectric effects. The second two-dimensional charge carrier gas counter-balances polarization charges in the first two-dimensional charge carrier gas so that the channel is disrupted under the gate stack.

Conventional HEMTs (high electron mobility transistors) are typically fabricated in GaN technology and generally characterized by a negative threshold voltage. That is, a current flows between source and drain terminals of the device even without applying any voltage to the gate electrode to open the transistor. Indeed, in GaN technology, a thin channel (inversion layer) is automatically created via strain and polarization effects between the source and drain terminals without the application of any voltage to the gate electrode. As such, the device is commonly referred to as being normally-on.
The normally-on feature of HEMTs is an intrinsic property of GaN technology, and restricts the range of applications for GaN technology to those applications where a power supply is available to generate the negative voltages necessary to turn off the GaN device. Moreover, the normally-on feature complicates the design of the circuitry needed to drive GaN transistors.
Attempts have been made to fabricate normally-off GaN HEMTs, i.e. GaN transistors with a positive threshold voltage. For example, a relatively thick (typically 100 nm or greater) p-type doped GaN material can be formed under the gate electrode. This thick p-type GaN layer depletes the inversion layer under the gate electrode, shifting the threshold voltage to positive values. The p-type GaN layer must be thick enough to create a vertical field which depletes and populates the naturally occurring inversion channel underlying the barrier layer, typically a layer of AlGaN. In addition, the vertical field generated by a voltage applied to the gate electrode allows for on and off modulation of the inversion layer.
However, unlike conventional silicon technology, doping of a large bandgap material such as GaN is not trivial. Indeed, the fabrication of a thin p-type doped GaN layer requires very complicated processing. Moreover, threshold voltage instability can arise due to the non-uniform doping of the GaN layer and, in particular due to surface accumulation of p-type dopant elements at the exposed GaN surface. In addition, the maximum gate voltage which can be tolerated by the device is limited by the presence of a p-n junction under the gate electrode. Once the built-in voltage of the p-n junction is reached, a large and possibly detrimental gate leakage flows directly from the gate contact toward the source and drain electrodes. Using a thick p-type doped GaN layer under the gate electrode also limits the transconductance of the device because the gate electrode is spaced further away from the inversion channel by a distance corresponding to the thickness of the p-type GaN layer. The p-type doped GaN layer yields a threshold voltage of about 1V.

Gate stack for normally-off compound semiconductor transistor


An object of the present invention is to provide a material for forming a capacitor layer comprising a dielectric layer formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method. The material can reduce a leakage current of a capacitor circuit. In order to achieve the object, a material for forming a capacitor layer comprising a dielectric layer between a first conductive layer to be used for forming a top electrode and a second conductive layer to be used for forming a bottom electrode, characterized in that the dielectric layer is a dielectric oxide film formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method; and particles constituting the dielectric oxide film are impregnated with a resin component is employed. In addition, a manufacturing method characterized in that the dielectric oxide film is formed on the surface of a material to be the bottom electrode by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method; a resin varnish is impregnated into a surface of the dielectric oxide film; the resin is dried and cured to form the dielectric layer; and then a top electrode constituting layer is provided on the dielectric layer is employed.

The material for forming a capacitor layer according to the present invention comprises a dielectric layer between a first conductive layer to be used for forming a top electrode and a second conductive layer to be used for forming a bottom electrode. Then the first conductive layer and the second conductive layer are processed by etching or the like to form a capacitor circuit. As disclosed in Patent Document 1, the material for forming a capacitor layer is typically used as a material for constituting electronic devices such as printed wiring boards.
The dielectric layer is a material to perform insulating properties and to store certain amounts of electric charges. Various methods are used to form such dielectric layers. In those, a chemical vapor deposition method (CVD method), a sputtering deposition method, and a sol-gel method are popular. For example, Patent Document 2 discloses a method for manufacturing the dielectric layer by the chemical vapor deposition method comprising a step of depositing an amorphous SrTiO3 thin film on a substrate at a temperature less than 400° C.; and a step of subjecting the amorphous SrTiO3 thin film to laser annealing or rapid thermal annealing to crystallize the film to obtain a SrTiO3 thin film. The dielectric layer is obtained by this method for the purpose of obtaining a SrTiO3 thin film having a high dielectric constant.
As for a dielectric layer obtained by the sputtering deposition method, Patent Document 3 discloses a thin film capacitor in which a bottom electrode, a dielectric having a high dielectric constant, and a top electrode are stacked on an arbitrarily layer on a substrate. The thin film capacitor is characterized in that the dielectric having a high dielectric constant is a polycrystal composed of crystal grains and grain boundaries; the polycrystal contains metallic ions capable of having multiple valences as impurities; and the impurities are contained in a higher concentration in the vicinity of the grain boundaries than in the crystal grains of the polycrystal. Patent Document 3 also discloses that the metallic ions capable of having multiple valences are preferably Mn ions. Patent Document 3 describes that thin film capacitors obtained by the method have higher long-term reliability and take a long time for dielectric breakdown.
As for a dielectric layer obtained by the sol-gel method, Patent Document 4 discloses a method for manufacturing a dielectric oxide thin film in which a surface of a substrate is subjected to a hydroxylation treatment and then the dielectric oxide thin film made of metal alkoxide is formed on the substrate. Patent Document 4 describes that a dielectric oxide that can be used for forming the thin film is a metal oxide having the dielectric characteristics such as LiNbO3, Li2B4O7, PbZrTiO3, BaTiO3, SrTiO3, PbLaZrTiO3, LiTaO3, ZnO, or Ta2O5. Patent Document 4 describes that dielectric oxide thin films obtained by the method are excellent in both orientation and crystallinity.
In particular, the formation of a dielectric layer by the sol-gel method disclosed in Patent Document 4 has advantages in comparison with the formation of a dielectric layer by the chemical vapor deposition method (CVD method) or the sputtering deposition method. The advantages are that investments for equipment are not required because vacuum processes are not used and the dielectric layer is easily formed on a substrate having a large area. In addition, it is easy to control the components of the dielectric layer to be in theoretical proportions, and an extremely thin dielectric layer can be obtained. Therefore, the dielectric layer obtained by the sol-gel method is expected to be a material for forming a capacitor layer with large capacitance.    Patent Document 1: National Publication of International Patent Application No. 2002-539634    Patent Document 2: Japanese Patent Laid-Open No. 06-140385    Patent Document 3: Japanese Patent Laid-Open No. 2001-358303    Patent Document 4: Japanese Patent Laid-Open No. 07-294862
However, the dielectric layers obtained by the sol-gel method, the MOCVD method or the sputtering deposition method have some problems, occurrence of a short circuit across a top electrode and a bottom electrode and occurrence of a large leakage current after formation of a capacitor due to its thin thickness of the layer because of uneven film thickness and gaps between oxide particles which result low production yields. Particularly when the areas of electrodes are widened to increase the capacitance of a capacitor, defective products with short circuit may be frequently produced.
In general, capacitor circuits have realized power savings of electronic and electrical equipment and the like by storing excess electricity or the like. Therefore, the capacitor circuits are required to have a capacitance as large as possible, which is a basic requirement on quality. The capacitance (C) of a capacitor is calculated with the formula C=∈·∈0(A/d) (∈0 is a dielectric constant of vacuum). In particular, there has been a recent trend of down sizing of electronic and electrical equipment, and thus down sizing is also demanded for printed wiring boards. Even though a large surface area (A) is allocated for a capacitor electrode in a certain surface area of a printed wiring board or the like, capacitor circuits may be required to have a larger capacitance.
Consequently, a material for forming a capacitor layer comprising a dielectric layer formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method which enables manufacturing of the capacitor circuits with large capacitance in high production yields has been required in the market.

Material for forming capacitor layer and method for manufacturing the material for forming capacitor layer


An implementation of SSP using variable depth for the vectors extending normal to the surface voxels of the brain so as to avoid white matter uptake extraction is provided. The implementation also provides the possibility to compare SSP for an individual amyloid imaging agent image to a SSP normal database and allows for 3D visualization of SSP information.

Three-dimensional Stereotactic surface projection (3D SSP) is a proven method of extracting cortical activity and mapping it onto the brain surface. Fluorodeoxyglucose (FDG) is a PET imaging compound, labeled with the radioactive isotope [18F]. For brain imaging, FDG issued to image cerebral metabolic rate of glucose consumption. 3D SSP has been shown to be a successful method, e.g., for detecting image patterns associated with Alzheimer's disease using FDG in PET brain imaging (PET FDG). 3D SSP has also been used for other PET and SPECT tracers, for example brain perfusion studies with SPECT using Ceretec. The 3D SSP method defines a large number of surface points on a brain model in standard space. Each surface point is associated with a normal vector. With reference to FIG. 1, when analyzing a patient PET or SPECT scan, the scan is first spatially normalized to the standard space. Then, for each cortical surface point, the data is data is sampled along the opposite direction of the normal vector into the brain to a certain depth, as shown in FIGS. 2A and 2B. The value of the maximum voxel along the ray into the brain is then mapped back to the surface point. The original 3D SSP method extends a fixed depth into the brain from each surface voxel. (Minoshima et al., A diagnostic approach in Alzheimer's disease using three-dimensional stereotactic surface projections of fluorine-18-FDG PET. J Nucl Med. 1995 July; 36(7):1238-48)
[18F]Flutemetamol is another PET imaging compound which binds to amyloid plaques in the brain and hence show deposition of amyloid in gray matter. Both FDG and Flutemetamol show changes in the cortical regions related to Alzheimer's disease. Yet, while PET FDG exhibits the highest uptake in the gray matter, [18F]Flutemetamol can exhibit high uptake in both gray and white matter. In [18F]Flutemetamol imaging of amyloid, there will be a significant uptake in gray matter if amyloid is present, while it will be very little or none if no amyloid is present. However, [18F]Flutemetamol also undergoes significant non-specific uptake in white matter for both amyloid positive and amyloid negative scans. This means that when using SSP in images with no or little amyloid, ie, a negative scan, there is a risk that the standard method will pick up high intensity white matter regions.
3D SSP methods of the prior art have extended the same depth into the brain from every surface voxel. Using such a single-depth for the analysis, the method thus can inadvertently extend into white matter, which will exhibit high uptake of an imaging agent like [18F]Flutemetamol. Because SSP is an attractive method for imaging both compounds, there is therefore a need in the art for a method and system which can use 3D SSP for amyloid imaging agents to observe uptake in gray matter but simultaneously minimizing the risk for blending in signal coming from white matter, as both tissues may exhibit high uptake.

Variable-depth stereotactic surface projections


In an easy open can lid a pulling-up direction of a tab acts toward a center of the lid while securing a finger hooking property with respect to the tab, by devising a shape of an embossed portion. In a can lid in which a tab for score breaking is fixed to a main body, and an embossed portion, into which a fingertip is insertable, is provided in the vicinity of a rear end of a finger hook portion of the tab, the embossed portion has a slope formed at a rear end side of the finger hook portion, and the slope of the embossed portion is provided with a guide recess for guiding a fingertip that extends toward the center of the lid at least up to a position thereof facing a central portion in a width direction of a back surface of the finger hook portion.

As a conventional easy open can lid, there has been known the one described in Japanese Patent No. 5741198 ("JP 5741198"), for example. That is, a tab for score breaking is fixed to a can lid main body. The tab is fixed at a rivet portion provided in the center of a can lid, and has one end thereof overlapped with a portion expected to be opened, and the other end thereof extended to the vicinity of a peripheral edge of the can lid. When opening the opening expected portion, a finger is hooked on a rear end of a finger hook portion located at the other end of the tab, and the tab is pulled up with the rivet portion as a fulcrum, whereby the opening expected portion of the can lid main body is pressed downward by the tab tip end portion, and a vertical shearing force is applied to a starting end portion of a score located between the rivet portion and the tab tip end portion to initially break the score, so that the score is sequentially broken along the periphery of the opening expected portion to form an opening.
In JP 5741198, the can lid main body is provided with an embossed portion in the vicinity of the rear end of the finger hook portion of the tab, and the interval between a bottom surface of the embossed portion and the finger hook portion is formed to be large, whereby the finger is easily hooked on the rear end of the finger hook portion of the tab, thereby enhancing opening operability of the tab. In particular, in JP 5741198, a tip-up portion is provided in the finger hook portion, thereby increasing the interval between the bottom surface of the embossed portion and the finger hook portion.
However, in the can lid of JP 5741198, a finger hooking property is improved by the embossed portion and the tip-up portion, but a movable range of the finger hooked on the rear end of the finger hook portion in a short side direction of the tab is so large that the finger may be displaced from the center of the finger hook portion, when the tab is pulled up, and the force acting on the tab may be obliquely applied with respect to a lid center direction. As a result, the force acting on the tab tip end portion may be reduced, thereby giving rise to a fear that defective opening or opening failure may be caused.
In addition, when the embossed portion and the tip-up portion are provided, the finger hooking property can be improved, but a gap of the can lid with respect to the panel surface becomes large, and hence, when can bodies with can lids seamed and fixed thereto are stacked, an upper can body may be inclined, so that a can bottom thereof may be hooked or caught on a finger hook portion of a tab of a lower can body, thereby enhancing a fear that unexpected or accidental opening of the lower can is likely to occur.


A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.

It is known to apply plasma excitation fields at two different frequencies to a region of a vacuum chamber for plasma processing a workpiece, wherein the region is coupled to a gas that the fields convert into the processing plasma. The workpiece is usually a semiconductor wafer, or dielectric plate and the plasma is involved in forming integrated circuit features on the workpiece. Typically, the plasma excitation fields at the two different frequencies are supplied to the region by a pair of spaced electrodes in the chamber or one electrode in the chamber and a reactance, in the form of a coil, located outside the chamber. The excited plasma typically dry etches the workpiece, but in some instances results in materials being deposited on the workpiece. High frequency RF power (having a frequency in excess of approximately 10 MHz) typically controls the density of the plasma, i.e., the plasma flux, while RF power having a low to medium frequency (in the range of 100 kHz to approximately 10 MHz) typically controls the energy of ions in the plasma and incident on the workpiece.
As the size of the features continues to decrease, there are increased requirements for precise control of various parameters of the plasma processing a workpiece. Amongst the plasma parameters requiring precise control are the plasma chemistry (i.e., types of ionic and radical species), the plasma flux and the ion energy of the plasma incident on the substrate. With the shrinking feature sizes and use of new materials in fabrication of integrated circuits, windows involved in processing the workpiece are decreasing in size, while pushing the limits on presently available plasma processors, particularly processors for etching. The shrinking feature sizes and requirements for new materials limit the use of the same reactor, i.e., vacuum processing chamber, for different etch applications.
It is, accordingly, an object of the present invention is to provide a new and improved method of and apparatus for processing a workpiece with a plasma.
Another object of the invention is to provide a new and improved method of and apparatus for precisely controlling several parameters of a plasma for processing a workpiece.
An additional object invention is to provide a new and improved method of and apparatus for precisely controlling the chemistry, density and ion energy of a plasma for processing a workpiece.
A further object of the invention is provide a new and improved highly versatile plasma processor for precisely controlling two or more parameters of a plasma for processing a workpiece.

Multiple frequency plasma processor method and apparatus


The invention is a carrier of one or more wire spools. The carrier is portable, and is suitable for the separate or simultaneous dispensing of wire from one or more wire spools housed within the carrier. The carrier includes a central rod through which the wire spools are inserted. This cross-section of this central rod may be hollow or solid. The carrier further includes a generally semi-circular cradle positioned below the wire spools. A pair of end walls supports this semi-circular cradle. Channels in the end walls permit rotation of the cradle relative to these end walls. The channels are formed by a generally circular cut-out in each of the end walls. The carrier also includes one or more slots in the cradle for the passage and dispensing of that wire through these slots.

Wire or cable dispensers are well-known in the art. These wire or cable dispensers may or may not be portable, may carry one or more spools of wire or cable, and may be comprised of stationary parts or a combination of stationary and moving parts.
One such cable or wire dispenser is described and claimed in U.S. Pat. No. 5,634,610, issued to Walsh on Jun. 3, 1997. Walsh discloses and claims a portable wire dispenser for holding and dispensing one or more spools of electrical wire or television or computer cable. Walsh permits replacement of exhausted wire spools without disturbing remaining non-exhausted wire spools, and also prevents free spinning of wire spools as wire is dispensed. Walsh does this by means of a fixed support member (item 50 in FIG. 1 of Walsh) and by means of a rotatable member (60) positioned above the spools.
Other cable or wire dispensers are shown in U.S. Pat. Nos. 2,715,458, issued to Polglase on Aug. 16, 1955; U.S. Pat. No. 3,948,455, issued to Schwartz on Apr. 6, 1976; U.S. Pat. No. 4,006,854, issued to Gibson et al. on Feb. 8, 1977; U.S. Pat. No. 4,083,268, issued to Kober on Apr. 11, 1978; U.S. Pat. No. 5,152,395, issued to Cross on Oct. 6, 1992; U.S. Pat. No. 5,330,120, issued to Tussing on Jul. 19, 1994; U.S. Pat. No. 5,495,653, issued to Schrock et al. on Mar. 5, 1996; U.S. Pat. No. 5,551,647, issued to Browning on Sep. 3, 1996; Des. U.S. Pat. No. 253,022, issued to Sligh on Oct. 2, 1979; and U.S. Pat. No. Des. 304,534, issued to Gustafson on Nov. 14, 1989.


In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.

1. Field
The present invention relates generally to magnetoresistive devices and, more particularly, to improved methods for fabricating giant magnetoresistive devices, e.g., for magnetic memories.
2. Related Art
The discovery of the giant magnetoresistive (GMR) effect has led to the development of a number of spin-based electronic devices. The GMR effect is observed in certain thin-film devices that are made up of alternating ferromagnetic and nonmagnetic layers. The resistance of a GMR device is lowest when the magnetic moments of the ferromagnetic layers are in a parallel orientation, and the resistance is highest when the magnetic moments are in an antiparallel orientation.
One type of GMR device is commonly referred to as a "spin valve." A spin valve typically includes two ferromagnetic layers that are separated by a thin layer of a non-magnetic metal, such as copper, and also includes an antiferromagnetic layer that "pins" the magnetization of one of the ferromagnetic layers. Thus, the magnetization of the "pinned" ferromagnetic layer remains generally fixed when moderate magnetic fields are applied. In contrast, the magnetization of the other ferromagnetic layer is relatively "free." Thus, by applying an appropriate magnetic field, the magnetization of the free ferromagnetic layer can be switched while the magnetization of the pinned ferromagnetic layer is unchanged. In this way, applied magnetic fields can change the relative orientations of the magnetizations in the ferromagnetic layers, which, in turn, can be detected as a change in resistance. In particular, the resistance of spin valve 10 is typically lowest when the magnetizations of the ferromagnetic layers are in a parallel orientation and highest when the magnetizations are in an antiparallel orientation.
Another type of GMR device is commonly referred to as a "pseudo spin valve." Like a spin valve, a pseudo spin valve typically includes two ferromagnetic layers that are separated by a layer of a nonmagnetic metal, with the magnetization of one of the ferromagnetic layers staying relatively fixed when moderate magnetic fields are applied. However, in a pseudo spin valve, this fixed magnetization is a result of a relatively high switching field rather than a result of being pinned. For example, the fixed ferromagnetic layer may be made substantially thicker than the free ferromagnetic layer.
GMR devices, including spin valves and pseudo spin valves, can be used as data storage elements, i.e., "bits," in magnetic random access memory (MRAM) devices. In typical MRAM devices, the logical state of a GMR bit is based on its resistance, which, in turn, is based on the relative orientations of the magnetizations of the ferromagnetic layers. Thus, in one logical state, e.g., a "0" state, a GMR bit may have its ferromagnetic layers in a parallel orientation and, thus, may exhibit a low electrical resistance. In the other logical state, e.g., a "1" state, the GMR bit may its ferromagnetic layers in an antiparallel orientation and, thus, may exhibit a higher electrical resistance. Data may be written to a GMR bit by applying a magnetic field sufficient to change the magnetization of the "free" ferromagnetic layer, In this way, the "free" ferromagnetic layer functions as a "switching layer" that stores data in the form of a particular magnetization orientation relative to the other ferromagnetic layer, the "reference layer."
In general, the process for fabricating GMR bits involves depositing the ferromagnetic layers and other layers that make up the GMR device over one or more underlayers and etching the deposited layers to a desired configuration of GMR bits. Examples of such fabrication processes are described in U.S. Pat. No. 5,496,759 and in U.S. patent application Ser. No. 10/284,922, filed Oct. 31, 2002, which are incorporated herein by reference. However, there continues to be a need for improved methods of fabrication in order to improve yields and/or performance of GMR devices.

Methods for fabricating giant magnetoresistive (GMR) devices


The invention relates to a lifting and supporting device for handling and positioning particularly large-surface elements in the shape of panels, especially in plasma processing installations. Said lifting and supporting device comprises a particularly metallic base plate, on which a plurality of particularly dielectric pins are arranged. Said pins may be set in pin holes especially provided in the base plate. Said panel-shaped element may be positioned on the pin end for the handling thereof or during a plasma processing. Said panel-shaped element may present an electrostatic charge. A small diameter for the pins and pin holes is selected such that, in conformity with the panel-shaped element provided with the electrostatic charge, an undesired electrostatic charge on said panel-shaped element is essentially avoided or, in conformity with the panel-shaped element to be plasma processed, a plasma perturbation in the area of the pin holes or pins is essentially avoided.

The present invention relates to a lifting and supporting device for handling and positioning particularly large-surface elements in the shape of panels, especially in plasma processing installations, as well as a corresponding processing method and a device therefor.
During the processing and especially during the coating or etching of semiconductors, silicon wafers for the production of integrated circuits for example, or of dielectrics, as for example glass plates for the production of flat television screens, the substrates, which for the most part are in the form of panel-shaped elements, have to be transported, temporarily supported, etc., or, quite generally, have to be handled in a certain way either during a processing step or between one step and the next. Unlike what happens in other fields of processing logistics, however, this is associated with difficulties, because both the components and the processes are extremely sensitive and even very small perturbations could cause considerable harm to the components or even lead to their complete destruction.
A problem that arises quite generally in the handling of semiconductors, but particularly in the handling of dielectrics that carry such electrical circuits as, for example, thin film transistors, is the problem of the electrostatic charging and the subsequent undesired electrostatic discharge. As can be seen from the schematic illustration of FIG. 6, the various working processes, plasma coating processes being a case in point, but also friction events during the transport of the panel-shaped elements can cause the panel-shaped elements to become electrostatically charged. This charge on the panel-shaped element 4 is schematically represented in FIG. 6 and there indicated by the reference number 8. If the charged panel element is now brought to a different distance from ground potential, as can happen, for example, during the lifting of the panel-shaped element, potential differences will occur on the panel-shaped element 4 and in FIG. 6 are indicated by V1 and V2. These potential differences on the surface of the panel-shaped element can now have the effect of causing an electrostatic discharge across the circuits or thin film transistors applied to the surface. This is schematically illustrated in FIG. 6 inside the frame at the center of the figure. But the electrostatic discharge can lead to the destruction of the component, so that in case of doubt the entire panel-shaped element, complete with its plurality of circuits or thin film transistors, has to be regarded as a reject.
This problem has hitherto been tackled, first of all, by trying to avoid the charging of the panel-shaped elements by, for example, ionizing the surrounding air. But, it has been found that complete avoidance of electrostatic charging is hardly possible in actual practice. Another approach to the solution of the problem is the undesired electrostatic discharge is the one in which all the circuits applied to the semiconductor or the dielectric are short-circuited during the production process by means of the application of additional conductors, so-called bus bars. But this has the disadvantage that it is associated with the greater cost of first applying and subsequently removing the bus bars. Over and above this, the bus bars also constitute obstacles for the remainder of the production process.
Especially in the case of plasma processes, a further problem associated with the handling of panel-shaped elements consists of the fact that the presence of the lifting and supporting devices in the plasma chambers perturbs the plasma, which effects the properties of the elements to be processed with the plasma. In plasma processing installations, the elements that are to be processed with the plasma, e.g., such panel-shaped elements as, for example, silicon wafers or glass plates, are usually deposited on metallic base plates in order to be processed with the plasma. To this end, pins are provided at the edges of the base plate that can be made to descend into the base plate in order to permit the raising and lowering of the panel-shaped elements, so that a gripping device, the arm of a robot for example, with a fork-shaped holder can be inserted under the panel-shaped elements and transport them from one processing station to the next. The pins of the known lifting and supporting devices are arranged at the edge of the base plate, because the pin holes in which the pins are moving constitute inhomogeneities in the metallic base plate and can therefore lead to a modification of the plasma above these regions. However, a modification of the plasma above these regions would have the consequence that in this area, for example, the deposition of coatings or the etching by means of the plasma, would be perturbed. However, since circuits or thin film transistors, i.e. active elements, are not usually applied to the edges of the panel-shaped elements, the arrangement of the pins and the pin holes in these regions does not do any harm. However, as the size of the panel-shaped elements increases and their thickness diminishes, this will once again lead to problems, because pins will now have to be arranged also at the center of the base plate in order to assure adequate support for the panel-shaped elements when they are raised or lowered. In this way, however, the pin holes will create inhomogeneities in the region of the center of the lifting and supporting device, where it would likewise be desirable to have the possibility of producing active areas of the panel-shaped elements. Hitherto, this problem has been solved by producing several finished components on a single panel-shaped element that, on completion of the process, are separated from each other by cutting the panel-shaped element. It is therefore possible to provide appropriate pins in positions corresponding to the cutting regions, because perturbation of the plasma by pins and/or pin holes arranged in these regions will not have any harmful effects. However, since in the case of the production of, for example, flat television screens, we have a situation in which the individual active regions of the panel-shaped elements become greater while the thickness of the panel-shaped elements diminishes, this remedy is subject to certain limitations.
Furthermore it is known, from U.S. Pat. No. 6,228,438 B1 for example, that the elements to be processed in the plasma can be supported on pins in order to form a dielectric layer below the element to be processed. In this case, the pins will once again produce perturbations in the plasma in the neighborhood of the pins. These are attenuated by means of additional recesses around the pins in the base plate.


Sensing airflow and delivering therapeutic gas to a patient. At least some of the example embodiments are methods including: titrating a patient with therapeutic gas during a period of time when a flow state of breathing orifices is in a first state, the titrating results in a prescription titration volume; and then delivering the prescription titration volume of therapeutic gas to the patient when the flow state of the breathing orifices is in a second state different than the first state, the delivering only to the breathing orifices open to flow.

Patients with respiratory ailments may be required to breathe therapeutic gas, such as oxygen. The therapeutic gas may be delivered to the patient from a therapeutic gas source by way of a nasal cannula.
Delivery of therapeutic gas to a patient may be continuous, or in a conserve mode. In continuous delivery, the therapeutic gas may be supplied at a constant flow rate throughout the patient's breathing cycle. A significant portion of the therapeutic gas provided in continuous delivery is wasted (i.e., the therapeutic gas delivered during exhalation of the patient is lost to atmosphere). In order to overcome the wastefulness of continuous delivery, related-art devices may operate in conserve mode using a conserver system.
A conserver system may be a device which senses a patient's inspiration, and delivers a bolus of therapeutic gas only during inspiration. By delivering therapeutic gas only during inspiration, the amount of therapeutic gas lost to atmosphere may be reduced. Conserver systems of the related art may sense a patient's inspiration at one nare and deliver the bolus of therapeutic gas to the other nare, such as through a bifurcated nasal cannula. Alternatively, conserver devices of the related art may sense a patient's inspiration at the nares generally, and delivery a bolus of therapeutic gas to the nares generally, such as through a non-bifurcated (single lumen) nasal cannula.
Sensing at one naris and delivering to a second naris may not work properly in all situations. If the patient has a blocked nare (e.g., because of congestion or some physical abnormality), either the sensing may not operate properly or the delivery of therapeutic gas may be to the blocked nare. Sensing and/or delivery may also fail to operate properly if the nasal cannula becomes dislodged, such as during sleep.
When sensing inspiration by monitoring both nares simultaneously, congestion and/or abnormalities in the nares may cause the system to not sense properly. Moreover, when delivering therapeutic gas to the nares generally, such as through a single lumen cannula, congestion and/or physical abnormalities of the nares may affect the volume inhaled in each naris, wasting therapeutic gas in some cases and not providing sufficient therapeutic gas in other cases.

Method and system of sensing airflow and delivering therapeutic gas to a patient


A method for treating urinary incontinence which consists of delivering a train of current pulses through one or more magnetic stimulation coils to induce a train of magnetic flux pulses, which then induce an eddy current within the body, thereby to stimulate a group of pelvic floor muscles, the pudendal nerve, the external urethral sphincter, or the tibial nerve.

1. Field of the Invention
This invention relates to a method for treating urinary incontinence and an apparatus therefor in such a manner as to induce an eddy current in the physiological body by means of a magnetic stimulation coil which produce a magnetic pulsive flux under the suppliment of current pulses.
2. Description of the Related Art
Urinary incontinence or leakage of urine contrary to the patient's will has been neglected because it is not a disorder threatening the life of the patient. This urological malfunction, however, interferes often with everyday activities of the patient, and thus appropriate treating measures for it have been desired.
Such desire is especially manifest nowadays when aged population have been increasing rapidly, and patients with this bladder malfunction tend to grow in association. This malfunction is seen among children as well as among elderly people whether they are men or women, and patients with spinal cord injuries often resulting from traffic accidents are also frequently afflicted with this malfunction. Such tendencies spur the urge toward a good remedy for this involuntary leakage of urine because such remedy would be greatly helpful for the improvement of quality of life of the patient.
Conventional methods for treating urinary incontinence include, besides those dependent on the use of medication or surgery, the electric stimulation which consists of applying stimulating electrodes to the patient, and delivering electric pulses therefrom to contract relevant muscles, thus preventing the occurrence of stress or urge incontinence. Those electric treatment methods have been widely known. The main elements to be stimulated in those methods include the lumbosacral plexus innervating the lower urethra, and a group of muscles forming the pelvic floor (pelvic floor muscle group) and the external urethral sphincter. The stimulating electrodes are usually inserted into anus or vagina, so that they can gain close access to those nerves and muscles from the body surface. To be inserted into vagina, the stimulating electrodes, which are to be connected to a pulse generator, take a plug form 2 cm in diameter and 4 cm in length, while they take a tympanic form of similar size to be inserted into anus. After the electrodes having been attached to the body, repetitive current pulses of a frequency of several to several tens Hz, a peak current of 1-100 mA and a width of 50 .mu.s-5 ms are passed through the body from the body surface.
Generally, pulses with a frequency of several Hz are indicated for urge incontinence while pulses with a frequency of several tens Hz for stress incontinence. The treatment consists usually of delivering electric pulses for 15 minutes once daily and repeating the session for two to four weeks.
During this treatment, the pelvic floor muscle group is stimulated by pulses delivered from the body surface, and put into action. Therefore, dystrophied muscles become activated, and come to have a strength necessary for constricting the passage of urine. This is the reason why this method is effective for the treatment of stress incontinence. To cope with urge incontinence which results from involuntary contraction of the bladder, what is necessary is to stimulate the pudendal nerve arising from 2nd to 4th sacral nerves or its branches, because the impulse from that nerve can inhibit reflexly the involuntary contraction of the bladder, thereby preventing involuntary leaks of urine.
An alternative method, which is also widely known, consists of placing surface electrodes on the external pudendal region or its vicinity to stimulate the pudendal nerve. When sessions comprising repetitive stimulations are repeated over a period, the effect persists even after cessation of the treatment.
It is also known that these treatments are effective for the treatment of bladder pain, frequent urination and bed-wetting as well.
With these methods dependent on the use of plug-type electrodes, however, the patient must insert the electrodes into anus or vagina each time he/she receives the treatment.
This is very disagreeable and humiliating for the patient.
Particularly if children, unmarried women or elderly persons have to be treated with these methods, and they are forced to do such actions for the treatment, they will never fail to feel a strong aversion to such requirements which may, in extreme cases, lead to complete denial of the treatment or treatment continuation. If a strong stimulating current is used to strengthen its effect so that the period necessary for the treatment may be shortened, it may cause pains or, in worst cases, burns.
In view of this, stimulus intensity is gradually raised in a pilot study, and the intensity of treatment stimulation is set to a level which does not cause any discomfort in the patient, or to a tolerable limit. However, the effect of a stimulus varies widely according to the configuration of the electrodes through which it is delivered, and to the sensitivity of the patient. Further, if the patient has a disordered sensitivity, the intensity of stimulus may happen to be so large as to cause him/her burns. Thus, these methods pose many problems which have remained to be solved. These methods further require frequent insertion,/removal of the electrodes into/from vagina or anus, which is necessarily associated with the danger of infection and inflammation. Accordingly, these methods, allegedly non-invasive, are close to an invasive treatment.
To alleviate the above problems, a number of methods have been developed wherein surface electrodes are pasted onto the skin around the pudendal region. However, the same problems still persist: pains and burns are more liable to occur with the progressive increase of stimulation, and daily application/removal of surface electrodes may lead to irritation/inflammation of the involved skin. This method is not acceptable to the patient whose sensitivity is impaired.

Method for treating urinary incontinence and an apparatus therefor