A field effect transistor (FET) has a gate electrode, a source electrode and a drain electrode formed on a GaInAs/GaAs quantum well layer structure having an undoped GaAs layer, an impurity doped GaInAs layer, and an undoped GaAs cap layer. The FET further has low resistivity regions formed by ion-implantation in a source region and the drain region of the GaInAs/GaAs quantum well layer structure, and has the impurity doped GaInAs layer as a channel, and further has an undoped GaAs cap layer with a 30-50 nm thickness. An annealing temperature for activating the low resistivity region is not higher than a temperature at which the GaInAs/GaAs quantum well structure substantially breaks and not lower than a temperature at which the sheet resistivity of the low resistivity region sufficiently reduces. The FET thus manufactured has desired characteristics for the GaInAs/GaAs quantum well structure and the low resistivity region, and attains low noise and high speed operation.

1. Field of the Invention
The present invention relates to a field effect transistor (FET) which operates with low noise at a high speed and can be fabricated with high uniformity, and a method for manufacturing the same.
2. Related Background Art
An FET which has a GaInAs/GaAs quantum well structure and has a GaInAs layer as a channel is disclosed in JP-A-63-90861, JP-A-63-272080 and JP-A-64-2371. Those FETS utilize the fact that GaInAs has a higher electron mobility than GaAs and overcomes a drawback that GaInAs cannot form a good Schottky barrier with the ability of GaAs by replacing GaInAs with GaAs to attain a high speed operation. However, demands for high speed are still strong and it has been proposed to form a low resistivity area by ion implantation to the source and drain regions of an FET having a GaInAs/GaAs quantum well structure to reduce stray serial resistance in order to meet those demands.
In such an FET, however, there is a risk of breakdown for the quantum well structure in an annealing process of the low resistivity area due to a difference between lattice constants of GaInAs and GaAs.
IEEE Electron Device Letter, Vol. 9 1988, pp 621-623 and "A study of the thermal stability of (In, Ga)As strained quantum well structures as a function of overlayer thickness" of Inst. Phys. Conf. Ser. No.96 chapter 6, page 365-370, which is presented at Symp. GaAs and Related Compounds, Atlanta, Ga. 1988, teach that the thermal stability of the GaInAs/GaAs quantum well structure is significantly improved by increasing the thickness of a GaAs cap layer on GaInAs (to 500 nm). However, when the GaAs cap layer on GaInAs is thickened and a gate electrode is formed on the GaAs cap layer, current in an n-type GaInAs channel cannot be fully modulated and good characteristics for the FET cannot be attained. In order to solve this problem, it has been proposed to form a groove called a recess when a gate electrode is to be formed, and form the gate electrode at the bottom of the recess in order to reduce a distance between the channel and the gate electrode, but it is technically difficult to form a recess having a uniform depth and therefore uniformity of the characteristic of the FET is lost.

Field effect transistor having a GaInAs/GaAs quantum well structure


A wireless data transmission system uses modulation onto a multi-level symbol, so that a multi-level frequency shifted signal can be generated. By using a Gaussian filter, inter-symbol interference can be introduced. The demodulation process makes use of templates corresponding to each of the possible symbol transitions, so that knowledge of previously decoded symbols can be used to decode the next one.

1. Technical Field
This invention relates to the transmission of data over high data-rate point-to-point and point-to-multipoint radio links. Such links are used in many different configurations, using radio transmitter and receivers which may be fixed or mobile, terrestrial or in orbit.
2. Related Art
The major limitations on capacity are available bandwidth and power, coupled with tight constraints on emissions outside the occupied bandwidth. These constraints require a capability to transmit data with high bandwidth efficiency while at the same time being tolerant both to equalisation error (amplitude and group delay) and to non-linearities (such as caused by saturated amplifiers).
There are several methods for increasing the information content of transmissions. These include the use of ever-greater bandwidth, as it becomes technically feasible by making use of higher carrier frequencies. However, carrier frequencies are a scarce resource, and operators are not usually permitted to select a frequency of their choice. Higher frequencies also tend to be subject to greater attenuation and require greater power to generate and amplify.
Some systems, when required to transmit a signal requiring a higher data rate than a single channel can provide, are arranged to make use of two or more channels, each carrying part of the data.
Digital amplitude modulation systems may operate in a binary "on/off" (1/O) mode. To avoid loss of synchronisation with the carrier, it is usual to use two non-zero amplitudes. If these are positive and negative values (of the same or different magnitudes) they may be also considered as a phase shift: a "1" being indicated by a 180° shift in the phase of the carrier signal compared to the phase of a "zero". Other modulation schemes use other phase shifts, for example using multiples of 45 degrees—known as 8PSK (eight-phase shift keying), as is used in the current state-of-the-art Internet Service Provider (ISP) backbone connection market segment, using Trellis Coded Modulation modems fitting into a 72 MHz satellite transponder to produce a bit rate of 155 Mbit/s. The use of both phase and amplitude shifts is known as Quadrature Amplitude Modulation (QAM).
Such schemes allow several binary digits ("bits") to be transmitted together, for example a system using a so-called "constellation" of sixteen "symbols", each reprsented by a different phase/amplitude state, would allow each individual symbol to represent a different four-bit word. The number of modulation states required increases exponentially with the number of binary digits to be represented by each symbol. For ease of conversion, constellations are usually selected to have a number of symbols which is some power of two, so that each symbol can represent a group of binary digits (bits).
International Patent Specification WO02/17507 discloses a system in which data is transmitted in a plurality of channels (data streams), each of which has a multiple-level amplitude modulation system. By selecting the number of levels and the number of channels appropriately, a greater data rate can be achieved for a given bandwidth than using that bandwidth for a larger number of narrowband binary channels, or for a single wide band signal having a larger number of amplitude levels.
Instead of amplitude or phase, different symbols may be represented by different frequencies. This is known as frequency shift keying (FSK). In order to economise on bandwidth, the frequency shifts are generally selected to be the minimum necessary to be distinguishable from each other, (minimum shift keying or MSK). To avoid high frequency spectral spread, the frequency shifts are generally shaped such that the frequency shifts follow a smooth Gaussian waveform rather than a square wave shape: thus the system is known as Gaussian minimum shift keying (GMSK).
In any digital system the individual symbols used must be sufficiently different from each other to be distinguishable by the receiver. However, the greater such a difference is, the more bandwidth is required. It will be apparent that any system other than a simple binary system (or the special case of a 3PSK system) will require that some symbol transitions will be greater than others. The increase in speed obtained by a multiple-level system therefore requires either a greater carrier-to-noise ratio than a simple binary system in order to allow the different levels to be clearly distinguishable, or a greater bandwidth in order to accommodate the same minimum shift between phase/amplitude states. Efficiency of use of bandwidth is obtained only if the gain in speed is greater than the increase in bandwidth required to achieve it. In the case of frequency shift keying a multiple-level system would require an increase in bandwidth proportional to the number of symbols used, if the minimum difference between frequencies is to be maintained, so no advantage is gained compared with the use of a plurality of binary channels occupying the same bandwidth.
However, frequency shift keying has advantages in certain circumstances such as in satellite links, as the cost of setting up earth stations is affected by the required equalisation error across the signal bandwidth and this becomes more of an issue for wide-band signals and in particular for systems using phase shift keying. High tolerance to non-linearities in the channel is also desirable, as satellite channels include one or more elements in series that could be running close to or at saturation point. It is therefore desirable in such circumstances to optimise the bandwidth utilisation of FSK systems
A prior art receiver described by Horikoshi et al in "Error Performance of Improvement of Bandlimited QTFSK Assisted by an Efficient Coded Modulation and Viterbi Sequence Estimation"—IEEE: Proceedings of the Vehicular Technology Conference, Stockholm, Jun. 8-10 1994 (New York) vol 2, conf 44, pages 1006-1010. In the receiver, discrete modulation states are detected by minimising the phase variance at a single decision point (by maximising a so-called "eye opening"), after equalisation has been applied to optimise the symbol shape.

Gaussian FSK modulation with more than two modulation states

British Telecommunications public limited company


Methods, systems, and computer-readable media for determining access rights for stored data are presented. Data tables may store data that is accessible to users. A request for explicit access to data may be received from a user. The system may determine the user's identity and further determine combined access rights based on the request for explicit access to data and the identity of the user. For example, implicit access rights for a user may be based on the identity. Based on the determined access rights, the system may retrieve data from the data tables. In an embodiment, the access rights may define that a first portion of a column is to be retrieved while a second portion of the column is to be restricted, or that a first portion of a row is to be retrieved while a second portion of the row is to be restricted.

Aspects of the disclosure relate to computer hardware and software. In particular, one or more aspects of the disclosure generally relate to computer hardware and software that can be used to determine access rights for stored data.
The data stored by computing devices has grown exponentially in the recent past. In addition, large organizations store data of various types that require varying degrees of restrictions. For example, an organization may store a first type of data that may be accessible to any user, a second type of data that must be restricted from a first group of users, a third type of data that must be restricted from a second group of users, and so on. Accordingly, a system devised to grant access to portions of data while simultaneously restricting access to portions of data may be useful.


Integrated circuit memory devices are fabricated by forming a first contact hole in a cell array region and a second contact hole in a peripheral circuit region. Conductive material is simultaneously placed in the first and second contact holes such that the conductive material in the first contact hole electrically contacts a memory cell transistor in the cell array region and the conductive material in the second contact hole electrically contacts the peripheral circuit transistor in the peripheral circuit region. A capping layer is included, and the peripheral circuit region wiring layer and the capacitor storage electrode is formed directly on the capping layer. Improved performance and reduced step height may thereby be obtained.

Integrated circuit memory devices are widely used in consumer and commercial applications. As is well-known to those have skill in the art, many integrated circuit memory devices include active devices such as transistors, and capacitors for storing data. As is also well-known, the integration density of integrated circuit memory devices has increased, so that more and more integrated circuit memory cells may be formed in an integrated circuit chip.
In general, as the number of devices formed on a chip increases, the size of the devices tends to shrink. For example, 1GB DRAM cells which include a transistor and a capacitor, may have an area on an integrated circuit of about 0.3 .mu.m.sup.2. This is about the area of a single contact hole in a 1MB DRAM cell. Accordingly, it is desirable to reduce the area of the transistors, the capacitors and the contact holes in order to produce high capacity memory cells, such as a 1GB DRAM cell.
State-of-the-art memory cells may employ three-dimensional cell structures, so that the contact holes, the capacitor and the transistor can be included in a small area. Since these three-dimensional cells may be scaled down in the lateral dimension, more cells can be crammed in an integrated circuit. Unfortunately, however, since the scale-down in the vertical direction is typically not large, the aspect ratio of the contact holes which are used to interconnect memory devices in the integrated circuit may increase. The resistance of the contacts may thereby increase, which may limit the device performance.
Other developments in high density memory devices attempt to increase the capacitance per unit area by providing a high dielectric material or by providing a three-dimensional capacitor structure. For example, it is known to use a Capacitor Over Bitline (COB) structure, wherein it is possible to obtain high capacitance in a limited area by forming a bitline and then forming the cell capacitor on the bitline.
FIG. 1 is a cross-sectional view of a portion of a conventional DRAM device employing a COB structure. The DRAM device includes a cell array region at the right side of FIG. 1 and a peripheral circuit region at the left side of FIG. 1.
As shown in FIG. 1, a capacitor is formed by forming a storage contact hole through a first interlayer dielectric 20 on an integrated circuit substrate 10 on which a word line 12 is formed. A storage electrode 24 is then formed to electrically contact the storage contact. A dielectric film 26 is formed on the storage electrode 24 and a plate electrode 28 is formed on the dielectric film 26. In the capacitor, the storage contact and the storage electrode 24 may be formed at the same time. The storage contact may include a plug which is formed of a doped polysilicon layer, which is the same as the material for forming the storage electrode.
Continuing with the description of FIG. 1, after providing a second interlayer dielectric film 30 on the capacitor and forming a contact hole through the second interlayer dielectric film and the first interlayer dielectric film 20, a first wiring layer 32 is formed. The first wiring layer 32 may be formed of a refractory metal such as tungsten, and is generally used as a first level interconnect wiring layer. A second wiring layer 34 and a third wiring layer 36 may then be formed by conventional processes, using appropriate interlayer dielectric films.
Unfortunately, as shown in FIG. 1, a memory device employing a COB structure may produce a step height between the cell array region (at the right side of FIG. 1) and the peripheral circuit region (at the left side of FIG. 1). This step height may become larger when the height of the storage electrode 24 is increased in order to increase the capacitance of the capacitor. As such, it may be difficult to reliably fabricate the first, second and third metal wiring layers 32, 34 and 36 respectively, to overcome the step height difference.
Capacitor On Metal (COM) memory devices have also been proposed, among other reasons, to overcome the potential step height problems. In a COM structure, the capacitor is formed on a first level metal wiring layer. A COM memory device is described in a publication entitled "A New Capacitor on Metal (COM) Cell for Beyond 256 Mega Bit DRAM" by Yoon et al., 1994 Symposium on VLSI Technology Digest of Technical Papers, pp. 135-136. In the Yoon et al. publication, it is possible to reduce the vertical pitch of the metal wiring layer and yet still secure the desired cell capacitance. However, as the integration density of integrated circuit memory devices continues to increase, additional improvements are desirable.

Intergrated circuit memory devices including capacitors on capping layer


The present invention provides automated methods and associated software for determining the organization of a component of interest in individual cells by determining the amount or distribution of the cellular component of interest as a function of position relative to a reference component in the individual cells.

Drug discovery is a long, multiple step process involving identification of specific disease targets, development of an assay based on a specific target, validation of the assay, optimization and automation of the assay to produce a screen, high throughput screening of compound libraries using the assay to identify "hits", hit validation and hit compound optimization. The output of this process is a lead compound that goes into pre-clinical and, if validated, eventually into clinical trials. In this process, the screening phase is distinct from the assay development phase, and involves testing compound efficacy in living biological systems.
Validation of genomic targets as points for therapeutic intervention using existing methods and protocols is a bottleneck in the drug discovery process due to the slow, manual methods employed, such as in vivo functional models, functional analysis of recombinant proteins, and stable cell line expression of candidate genes.
There is a need for cell screening and drug discovery tools that provide increased information handling capability. Bioinformatics has blossomed with the rapid development of DNA sequencing systems and the evolution of the genomics database. Genomics is beginning to play a critical role in the identification of potential new targets. Proteomics has become indispensable in relating structure and function of protein targets in order to predict drug interactions. The next level of biological complexity is the cell. Therefore, there is a need to acquire, manage and search multi-dimensional information from cells.
In contrast to high throughput screens, various high-content screens have been developed to address the need for more detailed information about the temporal-spatial dynamics of cell constituents and processes. High-content screens automate the extraction of multicolor fluorescence information derived from specific fluorescence-based reagents incorporated into cells (Giuliano and Taylor (1995), Curr. Op. Cell Biol. 7:4; Giuliano et al. (1995) Ann. Rev. Biophys. Biomol. Struct. 24:405). Cells are analyzed using an optical system that can measure spatial, as well as temporal dynamics. (Farkas et al. (1993) Ann. Rev. Physiol. 55:785; Giuliano et al. (1990) In Optical Microscopy for Biology. B. Herman and K. Jacobson (eds.), pp. 543-557. Wiley-Liss, New York; Hahn et al (1992) Nature 359:736; Waggoner et al. (1996) Hum. Pathol. 27:494).
High-content screens can be performed on either fixed cells, using fluorescently labeled antibodies, biological ligands, and/or nucleic acid hybridization probes, or live cells using multicolor fluorescent indicators and "biosensors." The choice of fixed or live cell screens depends on the specific cell-based assay required. The types of biochemical and molecular information now accessible through fluorescence-based reagents applied to cells include ion concentration, membrane potential, specific translocations, enzyme activities, and gene expression, as well as the presence, amounts and patterns of metabolites, proteins, lipids, carbohydrates, and nucleic acid sequences (DeBiasio et al., (1996) Mol. Biol. Cell. 7:1259;Giuliano et al., (1995) Ann. Rev. Biophys. Biomol. Struct. 24:405; Heim and Tsien, (1996) Curr. Biol. 6:178).
Despite the above, methods to improve the information accessible through high content screening are continually needed in the art.

Methods for determining the organization of a cellular component of interest


A rocking horse has a stand that includes a base portion with four tubular columns. The columns each have a tubular wall defining an interior. The wall has a top end with a top rim defining a top opening to the interior. An anchor pin extends through the wall and into the interior so that the pin engages two separated locations on the tubular wall. An S-shaped hook has a first end directly attached to the pin within the interior of the tubular wall and a second end extending out of the top opening on each column. The rocking horse also has four resilient members with outer ends connected to the second ends of the hooks, and inner ends connected to the toy horse for suspending the toy horse from the columns.

The present invention is generally related to children's riding toys, and more particularly, to a suspension system for a rocking horse or other riding toy.
Toy rocking horses typically have a stand with a vertical member at each one of the four corners of the stand. Helical or coil springs typically extend from the tops of the vertical members to a toy horse suspended by the springs in the middle of the stand. With this configuration, when a child is sitting on the horse, the springs permit the horse to be rocked back and forth and bounced up and down.
An example of a typical rocking horse is presented in U.S. Pat. No. 3,155,390 to Moore et al. The Moore et al. '390 patent discloses a rocking or hobby horse featuring a pair of transverse, horizontal rods that pass through and support the toy horse's body. Coil springs are connected between the ends of the horizontal rods and four tubular, generally vertical members positioned one each at the four corners of a stand. Each coil spring has a hook formed on its outer end that passes through a hole formed in the tubular wall of the corresponding vertical member. Significant wear of the hole and coil spring hook may occur with such an arrangement, however, which significantly limits the durability of the product.
U.S. Pat. No. 2,891,792 to Thoeming discloses a rocking horse having a stand that also features tubular, generally vertical members at each corner. A pair of horizontally-aligned holes are formed through the top portion of each vertical member. A ring with two hook-like terminal ends that engage the holes is positioned on the top of each vertical member. Each ring is engaged by a hook formed on the outer end of a corresponding coil spring where the four coil springs cooperate to suspend the horse from the stand. While the arrangement of the Thoeming '792 patent performs well, it is difficult to assemble and also suffers from durability concerns.
A more complex design for a rocking horse is disclosed by U.S. Pat. No. 5,645,489 to Laiche et al. The rocking horse of the Laiche et al. '489 patent features a stand that has a tubular, generally vertical member at each corner. Each tubular member receives a specially designed connector with flanges that engage a projection formed on the interior of the tubular member. An eye-bolt has a stem secured to the connector so that the loop portion of the eye bolt extends out of the end of the tubular member. A coil spring is hooked to the loop portion of the eye-bolt so that the toy horse is cooperatively supported by the springs. Ribbed sleeves fit over the coil springs and upper portions of the tubular members. While the rocking horse of the Laiche et al. '489 patent performs well, the spring connection arrangement is somewhat complicated which leads to increased production costs.


An electrical plug connector containing at least two contact partners which can be linked together in an overlap region to establish an electrical contact between them. At least one of the contact partners includes an electrically conductive material that converts to a liquid aggregation state at a predetermined temperature threshold. The liquid aggregation state is guided at least proportionately into the overlap region between the contact partners to establish the electrical contact.

1. Field of the Invention
The invention relates to an electrical plug connector with at least two contact partners, which can be linked to establish an electrical contact.
2. Description of Related Art
Electrical plug connectors, for example comprising a receptacle and a flat plug, or similar electrical plug connectors are utilized in large numbers in electrical appliances of the consumer goods industry, such as for example large and small domestic appliances, socalled brown goods, or also in electrical appliances for do-it-yourself and trades needs or the like. Due to the large number of electrical contacts made between two plug contact partners there is the not insignificant danger in largescale manufacture in particular that the electrical conductivity of the electrical plug contact partners inserted by plugging in, for example through contact partners outside the manufacturing tolerance or otherwise faulty, is either not made at all or only inadequately between the joined contact partners. Due to the then high electrical resistance at the point of connection in the joined contact partners the deficient or unavailable electrical conductivity leads to considerable heating, which depending on the degree of unavailable conductivity and the thus increasing electrical resistance can lead into temperature ranges, which can trigger a so-called cable fire or even result in burning of the overall electrical appliance, when the latter is operated.


A light emitting diode illuminator includes a reflecting shell (120), a light emitting diode light source (140) and a transparent cover (160). The reflecting shell includes a plurality of sequentially connected hollow tapered bodies (122, 124) having different taper angles. The tapered bodies cooperatively form a receiving space (123). The light source is installed at an end of the receiving space. The transparent cover is disposed at an opposite end of the reflecting shell away from to the light source and configured for directing light emitted from the light source out from the light emitting diode illuminator.

1. Field of the Invention
The present invention relates generally to an illuminator, and more particularly to an illuminator incorporating a light emitting diode (LED) as a light source.
2. Description of Related Art
In recent years, light emitting diodes (LEDs) have become highly efficient light sources and are used widely in such fields as automotive, displays, and traffic control.
Light generated by LEDs have the advantage in that it can be directed or aimed by using some kind of reflectors. However, because a light field of the LED is usually concentrated illuminating devices using LEDs cannot meet the needs of illuminating a relatively large area. Further, in some cases, such as the street lamp, a long and narrow light field is desired but not easily obtained with present methods. Therefore, there is a need in the art for an LED illuminator, which overcomes the above-mentioned problems.


A system is disclosed that enables the use of an incomplete SONAR array matrix in a correlation SONAR system. An improvement is achieved through the generation of a correlation-array model matrix of hydrophone correlations, based on an independent estimate of the ship's velocity, such as from an inertial navigator. Meanwhile, estimates of the missing values are generated based on one or more values from the model matrix, an interpolation of values from the SONAR array matrix itself, or some combination thereof. Regardless of how the missing values are generated, the model matrix provides a basis for comparison with the SONAR array matrix, which is populated with the estimated values, wherein subsequent comparisons are made between successive iterations of the model matrix and the SONAR array matrix. By applying the disclosed technique, a correlation SONAR system with incomplete data is able to continue working, and in the presence of a greater number of hydrophone failures than before.

SONAR (Sound Navigation And Ranging) is the generic name of the technology that is used to locate objects underwater. SONAR is used in marine, geological, and biological research, undersea mapping and navigation, and various commercial and military applications. Among its many uses, SONAR can accurately estimate the velocity of a sea-faring vessel.
It is known to apply signal correlation to SONAR technology to measure velocity. See, for example, U.S. Pat. No. 4,244,026 to Dickey and U.S. Pat. No. 5,315,562 to Bradley et al. These systems typically include a sonar source and multiple receivers (i.e., hydrophones), which have a known separation. The SONAR source directs sonic pulses towards the ocean floor, and the receivers detect echoes of those pulses. The velocity of the vessel is then calculated based upon the distance traveled by the vessel between the transmission and reception of a first pulse and a second pulse.
As discussed further below, correlation SONARS rely on selecting a best or maximum "correlation" either between hydrophones or pulses, for the determination of velocity. Maximum correlation occurs when the ray path of an initial SONAR transmission (from the transmitter to the ocean floor, etc., and back to a receiver) of a first detected pulse is equal to the ray path of a second SONAR transmission.
Correlation SONAR systems can be water or ground referenced, and Spatial or Temporal based. A water-referenced correlation SONAR uses echoes reflected from the water beneath a vessel, whereas a ground-referenced correlation SONAR uses echoes reflected from the ocean bottom. A correlation SONAR can also be both ground and water based in the sense of having both ground- and water-referenced modes of operation.
Spatial correlation SONAR calculates the velocity of a vessel by transmitting two or more pulses towards the ocean bottom, detecting echoes of the pulses on a typically planar two-dimensional array of hydrophones, determining which two hydrophones in the array correlate the best, and dividing the distance between those hydrophones by twice the time differential between the pulses. Peak correlation might take place between hydrophones, in which case an interpolation scheme is used to determine where the peak occurs.
Temporal correlation SONAR determines velocity by transmitting multiple pulses toward the ocean bottom and detecting echoes of the pulses at a hydrophone array. For a given pair of hydrophones, the system determines which two pulses correlate the best, and calculates velocity by dividing the fixed distance between the hydrophones by twice the time differential between the two correlated pulses.
Correlation SONAR systems have a reliability issue that has hitherto not been solved. In particular, serious performance degradation can occur or the system can be rendered inoperable in the event that there are failures in multiple hydrophone channels, where a "hydrophone channel" is defined herein as including a hydrophone and all associated cabling, signal routing, and processing of that hydrophone's output.

Method and apparatus for fault-tolerant, correlation SONAR processing


A method of authenticating a first computing device in communication over a network to a second computing device is disclosed. The first computing device is authenticated to the second computing device using a first authentication mechanism. The first authentication mechanism is based on Extensible Authentication Protocol (EAP) or IEEE 802.1x authentication. Short-term re-authentication data is generated and issued to the first computing device. Later, a request from the first computing device to re-authenticate to the second computing device is received. The first computing device is re-authenticated to the second computing device using a challenge-response mechanism in which the first computing device authenticates itself by presenting the short-term authentication credential to the second computing device. Accordingly, re-authentication proceeds more quickly and with fewer message exchanges.

The approaches described in this section could be pursued, but are not necessarily approaches that have been previously conceived or pursued. Therefore, unless otherwise indicated herein, the approaches described in this section are not prior art to the claims in this application and are not admitted to be prior art by inclusion in this section.
Computing devices that access resources over a network are commonly subjected to an authentication process. The authentication process determines whether a device requesting access to the network, or to a particular resource, actually is the device that it purports to be. If the device is authenticated, then depending on its identity, role, and other policy data, the device may be permitted to access the network, or selected resources within the network. In the past, authentication processes have focused on user authentication. More recently, technical development has migrated toward techniques for device authentication. These techniques are used, for example, for wireless computing devices such as cellular radiotelephones, personal digital assistants, and portable computers that communicate with servers and other resources over a network.
In one past approach, used in wireless networks, a particular authentication mechanism that is based on Extensible Authentication Protocol ("EAP"), known as EAP-SIM authentication, uses the GSM mobile phone infrastructure to authenticate users. In this approach, a GSM authentication center holds authoritative data that is used to authenticate the identity of particular mobile devices. Performing authentication involves communicating numerous messages between the mobile device and the GSM authentication center. If the mobile device requires re-authentication, the same process with multiple round-trip messages is used. This is time-consuming and computationally expensive. As a result, this approach is undesirable for mobile devices that frequently cross boundaries of wireless networks.
This approach is particularly unworkable because re-authentication can be triggered by numerous events. For example, re-authentication is typically required whenever the mobile device is powered up or rebooted, when a user logs off the device, when the device is moved to a new access point, when the device moves in and out of range of an access point, or when new cryptographic keys are distributed. In addition, it is possible for partial or unintended authentication to take place if the mobile device is temporarily or transiently brought in or out of range of an access point.
Based on the foregoing, there is a clear need for an improved method for re-authenticating mobile devices in networks.
There is a specific need for an improved method for efficiently re-authenticating mobile devices that use wireless networks.
There is also a need for an approach for efficiently re-authenticating mobile devices that use wireless networks that eliminates performing unnecessary round-trip messages and EAP-SIM authentication whenever re-authentication is needed. There is also a need for an approach that can reduce processing and network load on the GSM authentication infrastructure.

Method and apparatus for re-authenticating computing devices


A liquid crystal display panel and a liquid crystal display device incorporating the same are provided. The liquid crystal display panel includes a first substrate, a second substrate and a liquid crystal layer. The first substrate includes a first base, a dielectric layer and a storage capacitor. The storage capacitor includes a reflective electrode. The dielectric layer covers at least part of the storage capacitor. The second substrate is substantially paralleled to the first substrate. The second substrate includes a second base, a black matrix and a common electrode. The black matrix corresponds to the storage capacitor. The black matrix includes an opening corresponding to the reflective electrode. The opening is provided to let an outside light enter into the liquid crystal display panel such that the reflective electrode reflects the outside light to provide a light source to the liquid crystal display panel.

1. Field of the Invention
The invention relates in general to a liquid crystal display panel and a liquid crystal display device incorporating the same, and more particularly to a liquid crystal display panel using an electrode of a storage capacitor as a reflective electrode and forming an opening corresponding to the storage capacitor on a black matrix and a liquid crystal display device incorporating the same.
2. Description of the Related Art
Micro-reflective liquid crystal display device is a trans-reflective liquid crystal display device capable of forming a micro-reflective element on an ordinary transmissive display panel without employing extra manufacturing process to resolve information recognition failure which is caused by strong reflection on the surface when the panel is exposed under the sunshine. However, the original TN mode manufacturing method is used without adding any extra manufacturing process. The structure of the backlight module or the polarizer is improved to achieve micro-reflection effect. However, during reflection, the reflective liquid crystal display device does not optimize the reflected voltage and reflectance (V-R) relationship curve. Moreover, since the TN mode is adopted, the contrast of the liquid crystal display device can not be improved, largely affecting the practicality of the liquid crystal display device.

Liquid crystal display panel and liquid crystal display device incorporating the same


Methods and apparatus prevent breakage of a catalyst particle and evenly fill the catalyst into tubes to an optimum density. A loading tool comprises a plurality of damper members extending from a centerline of the tube in at least one radial direction but in every case, having a diameter smaller than the inner diameter of the tube. For example, in one embodiment the damper members are shaped in a “Z”-like formation with each having a different rotational orientation than the adjacent one above or below it. The Z formations can be horizontally arranged along a central member or can be formed vertically in a unitary fashion from a single, stiffened member. In another embodiment, the dampers are formed into spiral or helical shapes that increase or decrease in diameter along the length of the tube.

1. Field of the Invention
Embodiments of the present invention generally relate to methods and apparatus for filling particulate material into a tube. More particularly embodiments of the present invention generally relate to methods and apparatus for filling a catalyst into a tube of a primary reformer furnace.
2. Description of the Related Art
Primary reformer furnaces such as those used in the production of ammonia, hydrogen and methanol typically utilize tens or hundreds of heat transfer tubes that are filled with catalyst particles. These tubes must initially be filled with catalyst, and used catalyst must be replaced with fresh catalyst periodically. Voids in the catalyst fill can easily form if catalyst particles are introduced to the tubes too quickly or non-uniformly during the filling of the tubes. Also, catalyst particles can fracture or crush if they are allowed to free-fall too far during filling of the tubes. Voids or crushed catalyst create local density variations as well as a catalyst density that is less than optimal. Local density variations differ from tube to tube and cause variations in the pressure drop over the tubes. This results in distortions of gas distribution in a multi-tube reactor and causes uneven temperature distribution over the tubes during operation of the reactor. The resultant thermal and mechanical stress in the tube can reduce its useful life. To reduce voids the tube can be vibrated by such methods as tapping or vibrating the upper part of the tube. However, this is laborious and delays the filling operation. Additionally, tapping or vibration can expose the tube to extra mechanical stress. If excessive crushing or fracturing of catalyst particles occurs during filling, the only remedy is to remove all catalyst from the tube and refill it properly. This adds substantial labor and results in the loss of expensive catalyst
One method for reducing density variations utilizes a short sock or sock-like member made of a material such as a soft plastic that is first filled with the catalyst. The catalyst can be delivered from the manufacturer already in the socks. When filling the tubes, a sock filled with catalyst is fastened onto a line and lowered towards the bottom of each tube. By jerking the line, the sock opens at its bottom and the catalyst flows into the tube with a minimum of free fall. However, there are several disadvantages with this method. Filling one tube with this method usually requires a number of the socks thereby making the method laborious. Sometimes, the sock will open prematurely, allowing the catalyst particles to fall a great distance and achieve enough gravimetrically induced velocity to crush or fracture when they hit the bottom of a tube. If the sock contains voids among the particles of catalyst, then corresponding voids will typically form in the tube when the sock is emptied. Consequently, the tubes must be exposed to tapping or vibrating to secure reasonably even gas distribution over the tubes.
Another method for attaining good and even packing of catalyst into a tube includes filling the tube with water and then pouring in the catalyst. However, this method requires that the water subsequently be completely removed. Removal of the water and necessary subsequent drying takes a long time. Additionally, used water requires special treatment, adding time and cost.
RD Patent Application RD-253040-A describes a method for filling a tube with a catalyst by adding the catalyst to the upper part of the tube by means of a transporter comprising a slowly rotating arrangement. The catalyst is transported from a container through a duct in which there is a rod with oblique/transverse propeller wings or brushes. The catalyst particles are then transported to the upper end of the catalyst tube and fall smoothly into the tube. However, the particles must be added slowly in order to get even filling of the tube. Further, the catalyst drops a significant length especially during the first part of the filling operation thereby permitting the catalyst to be crushed or broken during the fall. Therefore, the particles can pack unevenly over the vertical length of the tube and the filling time can be long.
Therefore, there exists a need for a catalyst loading tool that is cost effective to manufacture and is easily configurable to accommodate particular loading requirements for a given reactor. There exists a further need for a catalyst loading tool that permits filling of reactor tubes evenly without breaking the catalyst particles.

Method and apparatus for loading catalyst

Clean Harbors Catalyst Technologies, LLC


A vehicle includes: an image sensor configured to acquire a front image; a navigation system configured to provide object information indicating information on one or more objects in front of the vehicle; a controller configured to generate a composite image of the acquired front image having the object information when the acquired front image includes at least object among the one or more objects; and a cluster configured to output the generated composite image.

A cluster (instrumental panel) typically provides a driver with information about a vehicle condition through various display means.
Recently, as the vehicle having Advanced Driver Assistance Systems (ADAS) have been popular, the cluster provide a variety of information in an image manner by using data obtained via a radar or a camera mounted on the vehicle.
For the cluster, an electronic system implemented by a liquid crystal display (LCD) screen is widely used. For example, the LCD type cluster displays a warning light, a turn signal indicator, a speedometer, a tachometer, and a temperature indicator by using a variety of screen construction.
In addition to the above-described screen construction, a background image may be displayed on the cluster screen. Conventionally, since the background image is provided as a fixed image, it is not visible to the driver and there is a limit in effective transmission and transmission of a variety of information.

Vehicle and control method for controlling image on in-vehicle cluster


Phase change material microcapsules are obtained using a PMMA prepolymer and an organic-solvent free synthesis process. A polymer monomer and an initiator are subject to pre-polymerization in a water bath to form Polymethyl methacrylate (PMMA) prepolymer which is then prepared to be a stabilizer aqueous solution. A phase change material is added to the stabilizer aqueous solution and liquefied in advance, and stirred to form an emulsion by a homogenizing mixer. A starting agent, a cross-linking agent and a Polymethyl methacrylate methyl ester prepolymer are added to the emulsion containing the phase-change material. The emulsion is further stirred by the homogenizing mixer for micro-emulsification which then aggregates in water bath. In this way, the process may use organic-solvent free process to pre-polymerize the polymer monomer into a Polymethyl methacrylate prepolymer and carries out encapsulation and polymerization at an oil-water interface to achieve the preparation of phase change material microcapsules.

1. Field of the Invention
The present invention relates to phase change material microcapsules synthesized by using a PMMA prepolymer and an organic-solvent free process, and more particularly to phase change material microcapsules synthesized by an organic-solvent free process which enables a polymer monomer is subject to pre-polyerization to form Polymethyl methacrylate prepolymer and also to encapsulation and polymerization at an oil-water interface, thereby achieving the preparation of the phase change material microcapsules.
2. Description of Related Art
In general, phase change material has the ability to change its physical state at a certain temperature, and absorbs or releases a large amount of latent heat in phase changing process. One of the characteristics of phase change material is during the change of physical state, the temperature of the material itself remained almost unchanged in the completion of the phase changing process. The combination of the above features favors to a broader development of the phase change material in various applications such as food preservation and temperature regulation.
The phase change material has a good advantage in energy storage. However, if it is directly applied in the phase transition, material loss during the phase transition will greatly affect the life of the material.
A microcapsule is a core-shell technology which uses a trace material as a shell to encapsulate another materiaml Therefore, the use of microencapsulation technology can solve the above mentioned problems of material loss and volume change caused by physical changes. In addition, the particle size becomes very small and the specific surface area becomes larger after the microencapsulation providing a larger heat transfer area. After the microencapsulation, the capsulate wall is usually thin which renders the heat transfer greatly improved.
Preparation of Polymethyl methacrylate (PMMA) microcapsules has been proposed in a lot of relevant literatures. For example, Park et al disclosed in 2006 modified titanium dioxide (TiO2) is encapsulated with Polymethyl methacrylate by using electrophoretic suspension process to form multi-core titanium dioxide microspheres. In 2007, Zhang et aml disclosed that with a phase separation method, Polymethyl methacrylate and PS are used to encapsulate tetradecane, and the obtained microcapsulates have uniform size and average particle size of 1-2 μm. In 2010, Ma et al, disclosed that the use of UV light to irradiate over a light initiator initiates the polymerization of methyl methacrylate (MMA) within an emulsion, obtaining phase-changing microcapsulates of good thermal stability. In 2011, Alkan et aml successfully encapsulate eicosane of particle size between 0.4-2.3 μm with Polymethyl methacrylate by using emulsion polymerization process, obtaining microcapsules of good thermal stability and chemical stability. In Taiwan, Zhang disclosed that methyl methacrylate and an initiator are subject to pre-polymerization in an organic solvent; the phase change material and the previously obtained prepolymer are added to an aqueous solution of polyvinyl alcohol (PVA); and then emulsification, homogeneous mixing, warming polymerization, filtering, washing, and drying are carried out to obtain microcapsules. Some approaches of preparation of phase change material microcapsules have been proposed in the industry, such as textiles Industry Research Institute disclosed a process to prepare phase-changing microencapsulated by using an acrylic monomer of bi-functional or tri-functional group.
Except Zhang's process that encapsulates the phase change material with the prepolymer at two steps, most of disclosures describe that methyl methacrylate monomer is directly subject to polymerization for encapsulating the phase change materiaml The approaches proposed by the Textile Research Institute and Zhang prepare the prepolymers in the environment containing organic solvents. The organic solvents in the manufacturing process are, eventually, directly discharged into the atmosphere, which has an adverse influence on the working environment.
For this reason, the inventors have made intensively efforts for years over the aforementioned problem and finally succeed to develop phase change material microcapsules synthesized by using a PMMA prepolymer and an organic-solvent free process, which overcomes the prior shortages.

Phase-changing material microcapsules by using PMMA prepolymer and organic-solvent free synthesis process

National Chung-Shan Institute of Science and Technology


In an integrated circuit packaging structure, such as in a SCM, DCM, or MCM, a method and apparatus for increasing heat spreader size and thus thermal performance is disclosed. The packaging structure includes a first substrate; an electronic device operably coupled to a top surface defining the first substrate; a heat spreader having a first surface operably coupled to a top surface defining the electronic device and an opposite second surface in thermal communication with a second substrate; and a frame defining an opening therethrough. The frame is further defined by an inwardly extending ledge configured to allow the heat spreader to extend at least to a peripheral edge defining a perimeter of the first substrate. In an exemplary embodiment, the second substrate includes one of a heat sink, cooling plate, thermal spreader, heat pipe, thermal hat, package lid, or other cooling member.

This disclosure relates generally to enhanced thermal and structural performance within integrated circuit (IC) packaging structures. More particularly, the present disclosure is directed to the cooling of integrated circuit chips using a heat sink providing heat sink to module strain relief and thermal performance enhancement.
As heat is generated during the functioning of integrated circuit chips (ICs), the thermal resistance to the heat sink (Rint) must be small so that the operating temperature of the chip is low enough to assure the continued reliable operation of the device. The problem of heat removal becomes more difficult as chip geometries are scaled down and operating speeds are increased, resulting in increased power density. The ability to adequately cool the chips is therefore a limiting factor in the further increase of system performance. Integrated circuit chips mounted on substrates, and particularly in an array on a substrate such as is found in a single-chip module (SCM), dual-chip module (DCM) or a multi-chip module (MCM), present special cooling difficulties. In an MCM, the chips may be mounted very close together and nearly cover the whole top surface of the MCM. With such an arrangement, it may not be possible to use a heat spreader bonded directly to the back surface of the chips, as is sometimes used for isolated chips, to reduce the heat flux (power/unit area, i.e. W/cm2).
A common technique for removing heat from high-power IC's makes use of a cooling plate or heat sink which is thermally attached to the chips using a compliant thermally conductive material. Heat is removed from the cooling plate or heat sink by methods such as forced air cooling or circulating liquid coolants.
The ever increasing power densities associated with today's processing chips are pushing the "coolability" limits of existing thermal technologies to limit Rint. In DCM and MCM applications, the module typically is comprised of a one or more electronic chips or components. Balancing the most cost-effective substrate size and CP power density, the designer typically is faced with trade-offs and limitations associated with providing the best electrical & thermal performance possible. In addition, recent developments reveal that substrate sizing is more dependent on bottom-surface input/output (I/O) requirements than top-side component placement restrictions, thereby lending the design to additional approaches to improve Rint thermal performance. Typical thermal solution options include flat plate cooling (FPC) and direct-lid-attached/advanced-thermal-interfaces (DLA/ATI). For FPC (both traditional and small-gap-technology versions), two "separable" thermal interfaces are needed to complete the assembly (e.g., one each between the chip and cap, and between the cap and heat sink, respectively). In the case of DLA/ATI, only one "separable" thermal interface is used (heat spreader and heat sink). If a separable thermal interface can be eliminated and the heat spreader size can be made large enough, thermal performance can be enhanced. In the past, FPC and DLA/ATI solutions have been used in combination, but extension of its usefulness has been limited by the modules cap internal dimensions for encapsulating the substrate, thus limiting maximization of the spreader size. In addition to these constraints, high-end DCMs and MCMs typically require high bottom-surface metallurgy (BSM) I/O count and features that allow field replacement. These requirements drive the application of a force-actuated land-grid-array (LGA) interconnect methodology for the assembly of the module to the card assembly. Additionally, the LGA interconnection mechanism is usually targeted for leading edge, high performance modules that generate significant amounts of heat. Thus, thermal performance is important in the LGA interconnection mechanism design.
Accordingly, it is desired to address the effects of the electrical, thermal and mechanical requirements with an apparatus and method that resolves the coupled dimensional constraints so that an optimized system can be produced.

Packaging for enhanced thermal and structural performance of electronic chip modules

International Business Machines Corporation


Novel chimeric moieties that show significant efficacy against cancers are provided. In certain embodiments the chimeric moieties comprise a targeting moiety attached to an interferon. In certain embodiments, the chimeric moieties comprise fusion proteins where an antibody that specifically binds to a cancer marker is fused to interferon alpha (IFN-α) or interferon beta (IFN-β).

Although spontaneous immune responses against tumor-associated antigens (TAAs) (Hrouda et al. (1999) Semin. Oncol. 26: 455-471) can be detected (Disis et al. (1997) J. Clin. Oncol. 15: 3363-3367), malignant cells causing disease fail to elicit an immune response that leads to rejection. Many studies have demonstrated that it is possible to enhance the immunogenicity of tumor cells by introducing immunostimulatory molecules such as cytokines and costimulatory molecules into them (Dranoff and Mulligan (1995) Adv. Immunol. 58: 417-454; Hrouda et al. (1999) Semin. Oncol. 26: 455-471; Hurford et al. (1995) Nat. Genet. 10: 430-435); however, effective gene transfer still remains a challenge. In addition, eradication of residual cancer cells may require the targeting of widely scattered micrometastatic tumor deposits that are not accessible to direct gene transfer.
Both the innate and the adaptive immune responses are essential for providing protection against infectious pathogens and tumors. The cross-talk between innate and adaptive immunity is regulated by interactions between cells and cytokines. Cytokines produced by cells of the innate immune system can, directly or indirectly, activate the cells of the adaptive immune response and can play an important role in eliciting protective antitumor immunity (Belardelli and Ferrantini (2002) Trends Immunol. 23: 201-208). Central to the activation of the innate immune system is the detection of bacterial products or "danger" signals that lead to the release of proinflammatory cytokines, such as IFN-α, TNF-α, and IL-1.
IFN-α is a proinflammatory cytokine with potent antiviral and immunomodulatory activities and is a stimulator of differentiation and activity of dendritic cells (DCs) (Santini et al. (2000) J. Exp. Med. 191: 1777-1788). Type I IFNs (IFN-α and IFN-β) have multiple effects on the immune response (Theofilopoulos et al. (2005) Annu. Rev. Immunol. 23: 307-336). IFN-α plays a role in the differentiation of Th1 cells (Finkelman et al. (1991) J. Exp. Med. 174: 1179-1188) and the long-term survival of CD8+ T cells in response to specific antigens (Tough et al. (1996) Science 272: 1947-1950).
Multiple studies have shown that IFNs are also capable of exerting antitumor effects in both animal models (Ferrantini et al. (1994) J. Immunol. 153: 4604-4615) and cancer patients (14. Gutterman et al. (1980) Ann. Intern. Med. 93: 399-406). In addition to enhancing the adaptive antitumor immune response, IFN-α can increase expression of the tumor suppressor gene P53 (Takaoka et al. (2003) Nature 424: 516-523), inhibit angiogenesis (Sidky and Borden (1987) Cancer Res. 47: 5155-5161), and prime apoptosis (Rodriguez-Villanueva and McDonnell (1995) Int. J. Cancer 61: 110-11417) in tumor cells. Although these properties suggest that IFN-α should be an effective therapeutic for the treatment of cancer, its short half-life and systemic toxicity have limited its usage.

This patent is subject to a terminal disclaimer.

Targeted interferons demonstrating potent apoptotic and anti-tumor activities

The Regents of the University of California


Acicular strontium carbonate particles are manufactured by introducing gaseous carbon dioxide into an aqueous solution or suspension of strontium hydroxide having a concentration of 1 to 20 wt. %, at a flow rate of 0.5 to 200 mL/min., relative to one gram of the strontium hydroxide, while stirring the solution or suspension in the presence of a dicarboxylic acid, in which the dicarboxylic acid comprises a divalent linear hydrocarbon group having one to four carbon atoms and carboxyl group bonded to each terminals, with the proviso that the linear hydrocarbon group may be substituted with one or more C1-6 alkyl groups, and thus carbonating the strontium hydroxide.

The acicular strontium carbonate particles can be incorporated into polymer resin to cancel birefringence of the polymer resin or to give birefringence to the polymer resin. The polymer resin composition of which birefringence is cancelled can be employed for the use as non-birefringent optical resin material or transparent plate. The polymer resin composition which is given birefringence can be employed as retardation plate.
D1(JP 2004-35347 A) describes that a non-birefringent optical resin material can be manufactured by dispersing in polymer material acicular strontium carbonate particles having a length of 500 nm or less under such condition that the length of the acicular strontium carbonate particles are aligned in parallel or perpendicular to the extended bonding chain of the polymer resin so as to cancel the birefringence brought about by the extension of the bonding chain. D1 further describes that the above-mentioned acicular strontium carbonate particles can be manufactured by chilling a mixture of an aqueous strontium salt solution and urea below the freezing point to hydrolyze the urea in the aqueous solution or by the steps of chilling an aqueous strontium hydroxide suspension below the freezing point and introducing gaseous carbon dioxide into the aqueous suspension. D1 discloses in Example 3 that acicular strontium carbonate particles having a mean length of 200 nm or less were manufactured by the above-mentioned procedures.
D2(JP 2008-247692 A) describes fine acicular strontium carbonate particles are manufactured by the steps of placing an aqueous solution containing a carbonate source in an alcohol containing a strontium ion source and then reacting strontium with the carbonate source in the presence of an alkaline agent. D2 contains a working example describing that acicular strontium carbonate particles having a mean length of 200 nm or less were manufactured by the above-mentioned procedures.
D3(JP 2010-254533 A) describes stick-like fine strontium carbonate particles are manufactured by the steps of reacting strontium hydroxide with a carbonate source such as carbon dioxide or a water-soluble carbonate in an aqueous medium in the presence of a particle growth-controlling agent selected from the group consisting of polyhydric alcohols, pyrophosphoric acid, ascorbic acid, carboxylic acids, carboxylates, polycarboxylic acids, and polycarboxylates, whereby producing acicular strontium carbonate particles, and heating the resulting acicular strontium carbonate particles in water to a temperature of 50° C. or higher. An example of the polycarboxylic acid is polyacrylic acid. D3 contains a working example in which stick-like strontium carbonate particles having a mean length of 200 nm or less were manufactured by the above-mentioned procedures. D3 has such description that the stick-like strontium carbonate particles manufactured by the disclosed procedure have a weak contracted portion and, owing to the presence of the weak portion, spherical particles can be easily obtained from the stick-like particles by pulverization procedures such as an airflow-type pulverizer.

Process for manufacturing needle-shaped strontium carbonate particles


A conduit repair liner includes at least two sheets of planar material that are connected to each other as pages of a book and coated with silica resin then closed against one another to form the conduit repair liner for wrapping around a carrier. The conduit repair liner includes a feature for removably affixing the conduit repair liner to the carrier during positioning within a failed conduit.

Ruptures, cracks, and holes often occur in underground conduits such as sanitary sewer lines, storm sewer pipes, and other gravity flow systems and service lines. Repairing these ruptured conduits, from within, is far less expensive and less dangerous than excavating and replacing the damaged sections, as often such pipes are located in hard-to-reach locations such as beneath roadways or buildings.
One such repair method is to introduce into the conduit a polyester-fiberglass or other structural composite liner impregnated with a thermosetting resin. The liner is wrapped around and secured to an inflatable bladder which is positioned at the rupture and inflated, forcing the repair liner against the inside wall of the conduit. The impregnated composite liner adheres to the damaged inner surface of the conduit and hardens. After completion of the curing process, the bladder is deflated and removed from the conduit. Known related art include U.S. Pat. Nos. 4,995,761 and 5,049,003 to Barton, U.S. Pat. No. 5,628,345 to Fisco, U.S. Pat. No. 5,322,653 to Muller, U.S. Pat. No. 3,202,562 to Lang, et al., U.S. Pat. No. 3,261,374 to Anderson, et al., U.S. Pat. No. 4,776,370 to Long, U.S. Pat. No. 4,880,035 to Vetter, U.S. Pat. No. 4,950,446 to Kinumoto, et al., U.S. Pat. Nos. 4,985,196 and 5,091,137 to LeDoux, et al., U.S. Pat. No. 5,199,463 to Lippiatt, U.S. Pat. No. 5,203,377 to Harrington, U.S. Pat. Nos. 5,213,727 and 5,346,658 to Gargiulo, U.S. Pat. No. 5,265,648 to Lyon, U.S. Pat. No. 5,501,248 to Kies, et al., and U.S. Pat. No. 6,019,136 to Walsh, et al., the contents of U.S. Pat. No. 6,019,136 are incorporated by reference.
The methods and apparatus, for example, as described in the above cited patents provides for repairs of cracks or leaks using certain resins such as epoxy resins. Recently, it has been found advantageous to utilize a silica resin instead of the resins noted in the prior references. Although silica resin works well for such repairs, silica resin does not adhere well to liners.
What is needed is a system that will repair cracks or leaks in pipes without gaining access to the outside surfaces of the pipes (e.g. excavation), utilizing silica resin.


Significant phonon migration restraint is achieved within a relatively homogeneous polycrystalline doped semiconductor bulk by purposely creating in the crystal lattice of the semiconductor hydrocarbon bonds with the semiconductor, typically Si or Ge, constituting effective organic group substituents of semiconductor atoms in the crystalline domains. An important enhancement of the factor of merit Z of such a modified electrically conductive doped semiconductor is obtained without resorting to nanometric cross sectional dimensions in order to rely on surface scattering eventually enhanced by making the surface highly irregular and/or creating nanocavities within the bulk of the conductive material. A determinant scattering of phonons migrating under the influence and in the direction of a temperature gradient in the homogeneous semiconductor takes place at the organic groups substituents in the crystalline doped semiconductor bulk. Fabrication processes and Seebeck-Peltier energy conversion devices are exemplarily described.

1. Technical field
The disclosure relates in general to Seebeck/Peltier effect thermoelectric conversion devices and in particular to devices using layers of conductive or semi conductive material deposited over a substrate even of large size by common planar techniques and with electrical contacts definable with noncritical lithographic or serigraphic techniques.
2. Reference Notions
The Seebeck effect is a thermoelectric phenomenon according to which a difference of temperature at the opposite ends of an elongated conductor or semiconductor generates electricity. The effect, discovered by the physicist Thomas J. Seebeck in 1821, manifests itself with the presence of a voltage difference at the two ends of a conductive bar subjected to a gradient of temperature ∇T. In a circuit including two junctions kept at different temperatures T1 and T2, between different materials A and B the voltage difference between the two junctions is given by:
                    V        =                              ∫                          T              1                                      T              2                                                                    [                                                                    S                    B                                                                          (                    T                    )                                                  -                                                      S                    A                                                                          (                    T                    )                                                              ]                                                                                ⅆ              T                                                          (        1        )
where: SA and SB are the Seebeck coefficients (also referred to as thermoelectric powers) relative to the two materials A and B. The voltage values are typically in the order of few μV/K. The Seebeck coefficients depend on the materials, on their absolute temperature and on their structure. The Seebeck effect may be exploited for making devices adapted to measure temperature differences, in terms of voltage differences in a circuit constituted by wires of different materials (thermocouple) or for generating electrical energy (thermopile) by connecting in series a certain number of thermocouples.
From a microscopic point of view, the charge carriers (electrons in metals, electrons and holes in semiconductors, ions in ionic conductors) diffuse when one end of the elongated conductor is at a temperature different from the temperature at the other end. The carriers at higher temperature will diffuse toward the zone at a lower temperature as long as there are different densities of carriers in the portion at lower temperature and in the portion at higher temperature of the elongated conductor. In an isolated system, equilibrium will be reached when, through a diffusion process, heat will become uniformly distributed along the whole conductor. Redistribution of thermal energy due to the movement of charge carriers implies a thermal current and of course such an electrical current will become null when the temperature of the system becomes uniform. In a system where two junctions are kept at a constant difference of temperature, also the thermal current will be constant and therefore a constant flux of charge carriers will be observed. Carrier mobility is reduced by scattering phenomena caused by impurities present in the lattice of the material, by structural defects and by lattice vibrations (phonons). Therefore, the Seebeck coefficient of a material depends in a significant measure on the density of impurities and of crystallographic defects further than on the material phonon spectrum. On the other end, phonons are not always locally in thermal equilibrium. On the contrary they move following the temperature gradient and loose energy by interacting with electrons or other carriers, as well as with the lattice defects. If the phonon-electron interaction is predominant, the phonons will tend to push electrons toward a portion of the elongated conductor loosing energy in the process, thus contributing to the electric field in the conductor film. These contributions are ever more important in the temperature range in which the phonon-electron scattering phenomenon is predominant, that is for
                    T        ≈                              1            5                                          θ            D                                              (        2        )
where θD is the Debye temperature. At temperatures lower than θD there are fewer phonons that are available for energy transfer while at temperatures above θD they tend to lose energy through a sequence of phonon-phonon collisions rather than through repeated phonon-electron collisions.
It is useful to define a thermoelectric factor of merit of a material as:
                    Z        =                              S            2                                κ                                                                          ρ                                              (        3        )
where κ and ρ are the heat conductivity and the electrical resistivity, respectively, of the material.
From a technological point of view, the use of Seebeck/Peltier effect thermoelectric converters has being considered for potentially important commercial application. More than half of the heat generated in a thermoelectric power plant is at present dissipated as low enthalpy heat. It is estimated that about 15 millions of megawatt are dispersed in the process of energy conversion alone. Availability of Seebeck generators capable of converting even only part of such amount of low enthalpy heat in electricity would have a significant positive impact on the energy shortage problem.
Known candidates as thermoelectrically active materials generators have a rather low factor of merit. For example, in case of a thin film of n silicon, doped with 5×1015 atoms of As per cm3, at room temperature, Z≈10−3 K−1. Values of ZT≈1 may be obtained only with costly materials of scarce availability such as Bi2Te3 or alloys of Sb or Se, as an example. In practice, besides few uses at relatively high added value, such as for thermoelectric generation in spacecrafts, the thermoelectric generators based on massive low cost materials achieve conversion yields of the thermal power to electrical power of just about 7%. By comparison, a turbine engine is capable of converting about 20% of the thermal energy to electrical energy.
In order to increase the factor of merit, the numerator of Eq. (3) should be maximized and/or the denominator should be minimized.
Analyzing the denominator, the formula may be written as:
      Z    =                            S          2                          ρ                                (                                          κ                ph                            +                              κ                el                                      )                              =                        S          2                                      ρ                                                                                κ              ph                                +          LT                      where      L    =                            ρ                                                                          κ            el                          T            =                                    π            2                    3                                              (                                          k                B                            q                        )                    2
and where −q is the electron charge and the suffixes ph and el indicate pertinence to phonons and to electrons, respectively.
According to Wiedemann-Franz Law, L is almost a universal constant of about 2.44×10−8 WΩK−2, because in metals the ratio between heat and electrical conductivities (σ=1/ρ) is almost the same at a given temperature T. For a good thermoelectric material κe1, that is LT/ρ, should always be much less than κph. That is to say that heat conduction should not be dominated by electrons.
Therefore, the doping of a semiconducting material destined to be used in Seebeck effect devices must be adapted to ensure a high electrical conductivity without significantly affecting heat conductivity.
Analyzing the numerator one has
  S  =                              k          B                q                          (                              5            2                    -                      ln                                      (                                                N                  d                                                  N                                      V                    -                    C                                                              )                                      )              =                            k          B                q                          (                              5            2                    +                      ln                                      (                              q                                                                                μ                                                                                ρ                                                                                N                                      V                    -                    C                                                              )                                      )
where NV-C is the density of states in the appropriate band depending on the dopant used and Nd(=1/q,μρ) is the active dopant concentration.
Therefore, though S varies with resistivity, it does so logarithmically (that is at a much reduced rate).
3. Discussion of the Prior Art
Lately it has been shown [1, 2] how a system of drastically reduced size (nanowires of silicon with transversal dimensions in the order of 20 nm) and having suitably roughened surfaces may manifest a relatively high thermoelectric factor of merit. Enhancement of the Z factor derives from a "decoupling" between the mean free path figures of phonons and electrons caused by a significant scattering of phonons at the surface of the conductive nanowire. In particular, the important contribution to heat conductivity deriving from acoustic phonons of relatively lower frequency (longer wavelength) may be almost completely eliminated, being null in the material the density of phonons of wavelength greater than the cross section dimensions of the wire. As a consequence, the heat conductivity of silicon drops from ≈150 W m−1 K−1 (at room temperature for massive Si) to ≈1.6 W m−1 K−1 (at room temperature for nanowires of Si of 20 nm in cross section). Unfortunately, these test devices made with silicon nanowires are made with techniques unsuitable to industrialization on large scale.
In a prior published patent applications No. WO 2009/125317 and in prior Italian patent application No. VA2009A000082, filed on Dec. 15, 2009, of the same applicant, methods are described for making nanowires of elements belonging to the IV Group of the Periodic Table or of alloys thereof, without requiring the use of advanced lithographic techniques of definition, in the realm of few tens of nanometers, and with a great control of the surface roughness of the nanowires, adapted to modify the mean free paths of phonons and electrons by exploiting even cavity surfaces produced in a controlled manner within the bulk of the nanowires. The disclosed processes though much simpler than the fabrication processes previously used for making nanosized elongated structures, still requires lithographic processing, anisotropic etchings and conformal deposition processes in vacuum.
In prior Italian patent application No. VA2009A000050, filed on Jul. 15, 2009, of the same applicant, a conversion device is described made of a stack of dielectric layers alternated to semiconducting layers even of large area that after deposition are implanted with ions of a noble gas or with N, F, or O, at gradually varied kinetic energy and fluence, and successively subjected to a degassing treatment though thermal cycling for favoring gaseous molecular aggregations within the bulk of the semiconductor that cause formation of nanocavities, uniformly distributed in the material, before being eventually released off in part.
In prior Italian patent application No. VA2009A000050, filed on Jul. 15, 2009, of the same applicant, a conversion device is described made of a stack of dielectric layers alternated to semiconducting layers even of large area. In such bi-dimensional nanometric structure of heat-conductive material the heat-escape area, wh (with w and h width and thickness of such layers), is small enough to prevent direct escape paths across the planar surfaces. When this basic condition is coupled to that of making the escape surfaces not smooth and substantially parallel to the direction of the temperature gradient across a septum, but relatively rough that is with nanometric profile irregularities adapted to contrast migration of reflected phonons in the direction of the temperature gradient across a septum by enhanced net backward inelastic scattering at the surface, a remarkably incremented thermoelectric factor of merit is observed. Surface irregularities with mean peak-to-valley amplitude and mean periodicity comprised between 5 to 20 nm are outstandingly effective. By depositing the conductive material with intermittent air breaks or by depositing the dielectric material in form of a sub-oxide that is successively thermally decomposed to a mixture of stoichiometric dielectric oxide and semiconductor, the above discussed type of nanometric surface irregularities at conductor/dielectric interfaces are obtained.

Seebeck/peltier thermoelectric conversion device having phonon confinement layers of crystalline semiconductor containing angstrom-sized organic groups as semiconductor atoms substituents within the crystal lattice and fabrication process


An electronic apparatus controls a peripheral device by using a relay apparatus. The electronic apparatus includes an interface connected to the peripheral device; a communication unit that performs communication with the relay apparatus; a receiver that receives a control signal for controlling the electronic apparatus; and a controller that, when the control signal is received, performs an operation based on the control signal, and controls the communication unit to transmit information about the performed operation and information about the peripheral device to the relay apparatus in order to control the peripheral device to perform an operation that corresponds to the performed operation.

1. Field
Methods and apparatuses consistent with the exemplary embodiments relate to an electronic apparatus, a system including an electronic apparatus and a relay apparatus, and a control method thereof. More particularly, the exemplary embodiments relate to an electronic apparatus that can control peripheral devices by using a relay apparatus, a system including the electronic apparatus and relay apparatus, and a control method thereof.
2. Description of the Related Art
Generally, a remote controller is an apparatus that remotely controls electronic apparatuses such as televisions (TVs), Digital Versatile Disk (DVD) apparatuses, video apparatuses, audio apparatuses, air conditioners, etc. In order to identify electronic apparatuses of a specific manufacturer and electronic apparatuses of other manufacturers, the remote controller emits control codes that are set differently from each of the electronic apparatuses in the form of an infrared signal.
However, since, if many different types of electronic apparatuses are used in a home, a plurality of remote controllers may have to be used to control these different devices. Accordingly, it may be difficult for the users to manage the plurality of remote controllers. Additionally, it may be cumbersome to change the remote controllers whenever the users want to select and use different electronic apparatuses.
Particularly, although a television and a set-top box are used together for broadcast services, separate remote controllers are used to turn on or off the television and set-top box; therefore, the users feel uncomfortable.
Accordingly, there is a need to seek ways that can control a plurality of electronic apparatuses at the same time by easier manipulation.

Electronic apparatus, system including electronic apparatus and relay apparatus, and control method for the same


An interfering surface is disposed between a rotating selector knob and a stop to prevent unwanted rotation of the selector knob and wherein release of the stop requires displacement of the knob in an axial direction relative to the stop to bypass the interfering surfaces thereby permitting selective rotation of the knob.

This invention relates generally to devices for retaining a selected knob selected function as may be used in lever operated hoisting devices or the like and more particularly to a device for indicating preventing the unwanted selection of a free-chain release of the hoisting chain.
Lever operated hoists are known in the prior art. Such prior art devices are known to include a selection feature wherein the hoist brake system may be temporarily released to permit the free-chain release of the hoisting chain to allow rapid deployment of the chain without the need for hand cranking out the chain. Selection of this function may be accomplished by rotating a hand operated selector knob to select the desired function. It should be appreciated, however, that the unwanted selection of the brake release function is to be avoided.
The foregoing illustrates limitations known to exist in present devices and methods. Thus, it is apparent that it would be advantageous to provide an alternative directed to overcoming one or more of the limitations set forth above. Accordingly, a suitable alternative is provided including features more fully disclosed hereinafter.

Indicating positive positioning selector knob lock


System, device, and method for generating and utilizing content-aware metadata, particularly for playback of video and other content items. A method includes: receiving a video file, and receiving content-aware metadata about visual objects that are depicted in said video file; and dynamically adjusting or modifying playback of that video file, on a video playback device, based on the content-aware metadata. The modifications include content-aware cropping, summarizing, watermarking, overlaying of other content elements, modifying playback speed, adding user-selectable indicators or areas around or near visual objects to cause a pre-defined action upon user selection, or other adjustments or modification. Optionally, a modified and content-aware version of the video file is automatically generated or stored. Optionally, the content-aware metadata is stored internally or integrally within the video file, in its header or as a private channel; or is stored in an accompanying file.

Electronic devices and computing devices are utilized on a daily basis by millions of users worldwide. For example, laptop computers, desktop computers, smartphone, tablets, and other electronic devices are utilized for browsing the Internet, consuming digital content, streaming audio and video, sending and receiving electronic mail (email) messages, engaging in Instant Messaging (IM) and video conferences, playing games, or the like.


An illuminated indicator is disclosed. The illuminated indicator includes graphics disposed on a rear surface of a lightpipe and a housing that supports the rear surface of lightpipe. The housing defines an outer perimeter light channel. The illuminated indicator also includes a plurality of light sources that are disposed about the outer perimeter light channel. The outer perimeter light channel directs light from the plurality of light sources to an outer perimeter edge of the lightpipe to evenly illuminate the graphics.

It is known that vehicular indicators are typically located proximate an instrument panel area. As seen in FIGS. 6 and 7, such indicators may include, for example, a gauge assembly, which is seen generally at reference numeral 100. Such conventional gauge assemblies 100 are typically lit using a relatively large number of light sources, one of which is referenced generally at reference numeral 102. Light, L, from the light sources 102 pass through a graphic applique 104 to create an effect or design theme. Appliques 104 typically include layers of multiple ink passes (not shown) that are screened on a polycarbonate substrate, which define the graphics. The ink passes diffuse the light intensity to create a balanced display for viewing by a vehicle operator. As illustrated, the light sources 102 are arranged directly behind the applique 104 so that the resulting light, L, cones-out in a cone-like shape 106 to illuminate the graphics.
Placement of the light sources 102 is important in creating a luminously-balanced display. If the display is not luminously balanced, "hot spots" or shadows may occur due to the location of other interior components (i.e., electrical or structural components) of the design. Specific examples of light sources 102 most often used include incandescent bulbs, light emitting diodes (LEDs), or an electro-luminescent film. Traditionally, incandescent bulbs are used because incandescent bulbs produce a high intensity, very repeatable, wide-cone "white light" (i.e., light which covers a large portion of the visible spectrum). However, when LEDs are implemented, the gauge assembly 100 may require a large quantity of LEDs to create luminously balanced intensities because LEDs typically provide a narrow-cone propagation of light, L, at a higher intensity in comparison to the light output of incandescent bulbs. Such implementations may comparatively require approximately six incandescent lamps or approximately twenty LEDs.
In general, the light, L, from any selected light source 102 may be of a higher than required intensity, and the excess light, L, is typically blocked by using diffusion and compensation ink passes on the applique 104. Thus, extra care must be taken when designing conventional luminously-balanced gauges 100, which are limited to a white daytime appearance and a different, non-white (i.e. green or amber), nighttime appearance.


In the present invention, a probe which detects a time varying magnetic flux density in a direction around a center axis of a processing space is provided in a process vessel of a plasma processing apparatus. The probe detects an induced electromotive force generated in a coil as the time varying magnetic flux density, and a computer calculates an amount of radio-frequency current in the process vessel from the induced electromotive force, based on a predetermined calculation principle.

1. Field of the Invention
The present invention relates to a plasma processing apparatus which processes a substrate by generating plasma in a process vessel.
2. Description of the Related Art
Processing using plasma is widely used in substrate processing such as etching and deposition in manufacturing processes of, for example, semiconductor devices, liquid crystal display devices, and the like.
The plasma processing is usually performed in a plasma processing apparatus. This plasma processing apparatus includes upper and lower electrodes facing each other in a process vessel, and radio-frequency power is supplied to the lower electrode on which, for example, a substrate is placed, to generate plasma between the lower electrode and the upper electrode, thereby processing the substrate.
In the above-described plasma processing, radio-frequency current flows in the plasma from the lower electrode to the upper electrode when the radio-frequency power is supplied. This radio-frequency current contributes to the generation of the plasma, and the state of the plasma such as plasma density, a self-bias (Vdc), and the like is closely correlated with the radio-frequency current. Therefore, the radio-frequency current is an important factor in evaluating the processing state of the substrate. For example, in a case where an amount of the radio-frequency current flowing from the lower electrode to the upper electrode is measured, it is conceivable to attach a current sensor between the lower electrode and a matching circuit, that is, on an output side of the matching circuit. For reference, there has already been disclosed an art in which, in order to detect a degree of peeling (a consumption degree) of the lower electrode ascribable to sputtering, a circuit for measuring current is provided between the lower electrode and a matching circuit, thereby detecting the consumption degree based on the measured value (see Japanese Patent Application Laid-open No. 2002-43402. and U.S. Pat. No. 6,879,233).


The present invention relates to a method of improving a heavy hydrocarbon, such as bitumen, to a lighter more fluid product and, more specifically, to a final hydrocarbon product that is refinery-ready and meets pipeline transport criteria without the addition of diluent. A solid asphaltene by-product is created for easy handling and further processing. The invention is targeted to enhance Canadian bitumen, but has general application in improving any heavy hydrocarbon.

Refining sweet crude resources require less capital input and have a much lower cost of processing than heavy sour crudes. However, the global availability of light, sweet crude to supply to refineries for the production of transportation fuels is on the decline making the processing of heavy sour crude an increasingly important option to meet the world's demand for hydrocarbon-based fuels.
Most (if not all) commercial upgraders for processing heavy crude have been built to convert heavy viscous hydrocarbons into crude products that range from light sweet to medium sour blends. Heavy oil upgraders basically achieve this by high intensity conversion processes which either release up to 20% by weight of the feedstock as a coke byproduct and another 5% as off-gas product, or require hydro-processing such as hydrocracking and hydro-treating to maximize the conversion of the heavy components in the feedstock to lighter, lower sulfur liquid products and gas.

Solvent de-asphalting with cyclonic separation


A plasma treatment device includes a dielectric window containing SiO2. The insulating film to be etched comprises silicon carbonitride. In a first plasma treatment step, a processing gas which contains no oxygen gas and contains CH2F2, etc, is used to deposit a protective film. In a second plasma treatment step, a processing gas which contains oxygen gas and contains CH3F, etc. is used to etch away the top and other portions of a part having a convex cross-sectional shape.

A conventional field effect transistor has a two-dimensional shape in which a channel is formed on top of a flat surface of a semiconductor. However, recently, in order to improve features of a high speed operation and a low power consumption, a three-dimensional transistor in which a gate insulating film is provided so as to surround a fin-shaped semiconductor portion and a gate electrode is provided so as to surround the gate insulating film (see, e.g., Patent Document 1) starts to be practically used. The gate insulating film is made of, e.g., a high dielectric constant material (high-k material). As for the high dielectric constant material, there is known TiO2, ZrO2, HfO2 or the like (see, e.g., Patent Document 2).
In the fin-shaped semiconductor portion, a transistor of a type in which two opposite side surfaces serve as carrier transfer channels is referred to as a double-gate transistor, and a transistor of a type in which a top surface as well as the two side surfaces serve as carrier transfer channels is referred to as a tri-gate transistor. There is suggested a semiconductor device having the double-gate transistor and the tri-gate transistor on a common substrate while utilizing advantages of the double-gate transistor and the tri-gate transistor (see, e.g., Patent Document 3).
The fin-shaped semiconductor portion protrudes from the substrate. Therefore, if the fin-shaped semiconductor portion is coated by the gate electrode, the corresponding semiconductor portion and the gate electrode have a part having a convex cross-sectional shape which is vertically formed on the substrate. In order to achieve insulation or protection, side surfaces of the part having a convex cross-sectional shape need to be coated by the insulating film.    Patent Document 1: U.S. Pat. No. 7,560,756    Patent Document 2: U.S. Pat. No. 7,714,397    Patent Document 3: U.S. Patent Application Publication No. 2010/0297838
In the case of forming the insulating film on the substrate including the part having a convex cross-sectional shape, the side surfaces of the part having the convex cross-sectional shape needs to be coated by the insulating film. However, a peripheral flat surface or a top surface of the part having a convex cross-sectional shape may not need to be coated by the insulating film because it decreases the flatness of the entire device and increases the thickness of the device. The present inventors have found that it is difficult to selectively coat the part having a convex cross-sectional shape because portions on the side surfaces are removed when portions on the flat surface of the insulating film are removed by plasma etching.

Plasma treatment method and plasma treatment device


An automatic control apparatus for a carburetor choke valve includes a pull-rod, throttle control lever, choke block, and temperature control assembly which is arranged on a cylinder head through a bracket having a rotating shaft and coil spring. The rotating shaft is connected to the spring and one end of the pull-rod via a rotary arm. The other end of the pull-rod is located at a choke valve shaft. The block and valve shaft are connected to respective ends of the lever. During cold start, the block is opened driving the lever to pull the valve shaft. When rotated through a certain angle the valve shaft is blocked by part of the pull-rod, such that the valve and block cannot be fully opened. During warm start, the valve shaft when returning is blocked by another part of the pull-rod such that the valve cannot fully close.

At present, carburetor choke valves are primarily divided into two kinds—automatic and manual. Under natural conditions, a carburetor choke valve in the automatic mode is fully closed, and after engine startup the choke block is driven to rapidly rotate by the forced air generated by the rotation of flywheel blades and the throttle control lever is driven by the choke block, causing the rotation of the carburetor choke valve shaft to open the choke valve. However, due to the high rotational speed of the flywheel and the rapid increase of the driving force of the forced air generated after engine startup, the choke valve is immediately opened to the maximum, thus resulting in a lower concentration of mixed gas entering the carburetor, and starting the engine smoothly becomes difficult and a hunting phenomenon emerges. In addition to that, as a mixed gas concentration on the low side is required when the engine is warm started and a conventional choke valve is still fully closed when being manually started a mixed gas concentration on the high side will make starting the engine difficult. In the manual mode, manual control of the extent of opening of the choke valve is required and this causes operation inconvenience.

Automatic control apparatus for carburetor choke valve

Chongqing Zongshen General Power Machine Co., Ltd.