A hazardous material container storage building comprising a plurality of modules, each module having a floor for supporting containers of hazardous waste materials and tubes underlying the floor. In one embodiment, a first and second module are provided. A mechanical joining mechanism extends through the first module tube and the second module tube for securing the first module to the second module. The first and second modules are joined to create a single, unitary hazardous waste material storage building. A related method is also provided. Another embodiment of a hazardous waste material container storage building comprises providing a plurality of modules, each having a securing member disposed on the roof of each module. Two modules are joined by connecting a fastener to the securing members of each respective module. A related method is also disclosed. The first and second embodiment may be used in the same installation. A grid system design for hazardous waste material container storage is also disclosed. An overhead door system for such a hazardous material container storage building is also provided.

1. Field of the Invention
This invention relates to a hazardous material container storage building and a related method, and in particular to a modular and portable system which can store hazardous material containers efficiently and safely.
2. Background Discussion
Hazardous waste is frequently placed in 55-gallon cylindrical barrels typically measuring about 22 to 23 1/2 inches in diameter. The hazardous waste can be stored in a liquid or solid form. These barrels must be kept in a building that has suitable safety features such as proper venting, fire and explosion protection and leakage protection.
A problem has arisen in providing storage for hazardous waste material storage containers. Buildings must be constructed to store the hazardous waste material. These buildings have to comply with safety standards mandated by Federal, state and local law in addition to meeting industry trade standards. However, these buildings need to be constructed quickly and with an eye towards future expansion of the floor space that is required to store hazardous waste material containers. In addition, available space for the containers must be used efficiently in order to minimize storage costs.
Thus, there remains a need for a hazardous waste material container storage system that is designed to accommodate any number of containers of hazardous waste while employing valuable storage space efficiently. There also remains a need for a modular system which allows for flexibility in the size of the building needed to store the hazardous waste.

Hazardous material container storage building and related method


A multiple memory layer device has a plurality of stacked memory layers. Each of the memory layers has: a charge generating layer of p-type semiconductor material with a plurality of n-type diffusion regions; an insulating layer disposed over the charge generating layer; a charge storing layer disposed over the insulating layer; and another insulating layer disposed over the charge storing layer. A gate is disposed over the top insulting layer in the uppermost memory layer in the plurality of stacked memory layers.

1. Field of the Invention
The present invention relates to a local charge storing memory device. More particularly, the present invention relates to a memory device with multiple memory layers of local charge storage.
2. The Background Art
There are a variety of non-volatile memory devices known to those of ordinary skill in the art. These include antifuses, floating gate transistors, and floating trap transistors. An antifuse is a programmable device that includes a first and second electrode having a dielectric disposed between the first and second electrodes. It is an open state until programmed. It is programmed by placing a voltage across the first and second electrodes sufficient to cause current to flow between the electrodes to form a conductive link between the electrodes. Once programmed, the antifuse provides a conductive path between conductive lines coupled to the first and second electrodes of the antifuse.
A floating gate transistor is an MOS based device having an unconnected or floating polysilicon layer disposed in a dielectric between the semiconductor surface and the gate of the MOS transistor. There are a variety of known floating gate transistor technologies. These differences in the art are due at least in some instances to the specific geometry of the floating gate, the distance from the semiconductor surface of the floating gate in the dielectric, the inclusion of additional gates in the MOS transistor of the floating gate memory cell, the manner in which electrons are placed on and removed from the floating gate, and the diverse arrangements of the floating gate transistors into memory cell arrays. These various technologies, well known to those of ordinary skill in the art, include electrically programmable read only memory (EPROM), electrically erasable and programmable read only memory (EEPROM), flash EEPROM, NOR flash and NAND flash.
To program the floating gate transistor, electrons are placed on the floating polysilicon layer, and to erase the floating gate memory cell, electrons are removed from the floating polysilicon layer. According to the particular floating gate transistor technology involved, electrons are (a) placed onto the floating gate; and (b) removed from the floating gate by a combination of (a) channel hot electron injection or Fowler-Nordheim tunneling; and (b) UV light, hot hole injection or Fowler-Nordheim tunneling, respectively. Each of these methods for placing and removing electrons on the floating gate requires the gate, source, drain and substrate of the floating gate transistor to either be biased to voltages relative to one another or to float for a time sufficient to either program or erase the floating gate transistor.
A floating gate memory cell is programmed when sufficient electrons are placed on the floating polysilicon layer to prevent the MOS transistor of the floating gate memory cell from being turned on. The charged floating polysilicon layer opposes a voltage which, when applied to the gate of the floating gate memory cell would typically turn-on the MOS transistor of the floating gate memory cell. When these electrons are removed, a normal operating voltage applied to the gate of floating gate transistor will result in current flowing through the MOS transistor of the floating gate memory cell. This current may then be sensed to determine whether a particular floating gate memory cell has been programmed.
Conventional floating gate memory cells have some performance characteristics such as long programming and erase times, high programming voltages, insufficient data retention times, limited number of programming cycles, and large integrated circuit area requirements which have led to the investigation and development of local charge storage MOS transistors such as floating trap MOS transistors and floating gate silicon nanocrystal MOS transistors.
In FIG. 1, an n-channel floating trap MOS transistor 10 according to the prior art is illustrated schematically in cross section. In n-channel floating trap MOS transistor 10, a p-type region 12 formed by a p-type semiconductor substrate or p-type well formed in a semiconductor substrate has a first n-type source/drain (S/D) region 14 and a second n-channel source/drain region 16. A lower silicon dioxide layer 18 of about 20 to about 60 angstroms in thickness is disposed above the p-type region 12 and a portion of the source and drain regions 14 and 16, respectively. A silicon nitride layer 20 of about 60 to about 80 angstroms in thickness is disposed above the silicon dioxide layer 18. The silicon nitride layer 20 forms a floating trap layer that traps electrons as they are injected across the oxide layer 18 and into the nitride layer 20. An upper layer of silicon dioxide 22 of about 60 angstroms is formed over the nitride layer 20. A polysilicon or metal conductive control gate 24 is disposed above the upper oxide layer 22. The upper oxide layer 22 functions to electrically isolate the conductive gate 24 from floating trap 20.
Two well known, and similar floating trap transistor technologies include silicon-oxide-nitride-oxide-silicon (SONOS) and metal-oxide-nitride-oxide-silicon (MONOS). In each of these devices, the dielectric separating the gate of the MOS transistor from the semiconductor substrate is an oxide-nitride-oxide (ONO) layer. In a recent advance in the floating trap transistor technology of MONOS/SONOS devices, a thicker bottom oxide layer in the ONO dielectric has been employed to improve charge retention and to reduce read disturb.
In a floating trap MOS transistor, charge is stored (trapped) in or removed from after being trapped in, a dielectric separating the gate of the MOS transistor from the semiconductor substrate. Unlike a floating gate transistor, where charge stored on the polysilicon conductor may flow freely within the polysilicon conductor, charge stored in a floating trap MOS transistor is localized to the region of the floating trap material above the source or drain where it was originally placed during programming. Accordingly, a bit of information may be stored above each of the junctions of a floating trap MOS transistor for a total of two bits. To program a floating trap MOS transistor device both channel hot electron injection and Fowler-Nordheim tunneling have been employed. To erase a floating trap MOS transistor device both Fowler-Nordheim tunneling and tunneling enhanced hot hole injection have been employed.
In FIG. 2A, a table indicates the voltages applied to the floating trap MOS transistor 10 depicted in FIG. 1 for programming by channel hot electron injection in either a Substrate Ground Mode or a Substrate Enhanced Mode. As set forth therein, in the Substrate Ground Mode wherein the substrate 12 is at about 0 volts, the gate 24 is held at about 9 volts to about 12 volts, and the first source/drain 14 of n-channel floating trap MOS transistor above whose junction the electrons are to be trapped is held at about 0 volts, while the second source/drain 16 of the n-channel floating trap MOS transistor is held at about 4 volts to about 5 volts. In the Substrate Enhanced Mode wherein the substrate 12 is at about −2 volts to about −3 volts, the gate 24 is held at about 6 volts to about 8 volts, and the first source/drain 14 of n-channel floating trap MOS transistor above whose junction the electrons are to be trapped is held at about 0 volts, while the second source/drain 16 of the n-channel floating trap MOS transistor is held at about 3 volts to about 4 volts. The programming time for channel hot electron injection is about 1 ms to about 5 ms.
In FIG. 2B, a table indicates the voltages applied to the floating trap MOS transistor 10 depicted in FIG. 1 for programming by Fowler-Nordheim tunneling in either a Substrate Ground Mode or a Substrate Enhanced Mode. With Fowler-Nordheim tunneling, both of the areas above the junctions of the first and second source/drain regions 14 and 16, respectively, are programmed at the same time. As set forth therein, in the Substrate Ground Mode wherein the substrate 12 is at about 0 volts, the gate 24 is held at about 12 volts to about 15 volts, and the first source/drain 14 of n-channel floating trap MOS transistor is held at about 0 volts or allowed to float, while the second source/drain 16 of the n-channel floating trap MOS transistor is held at about 0 volts or allowed to float. In the Substrate Enhanced Mode wherein the substrate 12 is at about −6 volts to about −8 volts, the gate 24 is held at about 6 volts to about 8 volts, and the first source/drain 14 and the second source/drain 16 of n-channel floating trap MOS transistor are held at about −6V to −8 volts or allowed to float. The programming time for Fowler-Nordheim tunneling is about 2 ms to 20 ms.
In FIG. 2C, a table indicates the voltages applied to the floating trap MOS transistor 10 depicted in FIG. 1 for erasing either one or both areas above the source/drain junctions of source/drain regions 14 and 16, respectively, by hot hole injection in either a Substrate Ground Mode or a Substrate Enhanced Mode. As set forth therein, in the one-sided Substrate Ground Mode wherein the substrate 12 is at about 0 volts, the gate 24 is held at about −10 volts to about −12 volts, and the first source/drain 14 of n-channel floating trap MOS transistor above whose junction the electrons are to be erased is held at about 5 volts to about 6 volts, while the second source/drain 16 of the n-channel floating trap MOS transistor is allowed to float. In the one-sided Substrate Enhanced Mode wherein the substrate 12 is at about −2 volts to about −3 volts, the gate 24 is held at about −6 volts to about −8 volts, and the first source/drain 14 of n-channel floating trap MOS transistor above whose junction the electrons are to be erased is held at about 3 volts to about 4 volts, while the second source/drain 16 of the n-channel floating trap MOS transistor is allowed to float. In the two-sided Substrate Ground Mode wherein the substrate 12 is at about 0 volts, the gate 24 is held at about −10 volts to about −12 volts, and the first and second source/drain regions 14 and 16, respectively, of n-channel floating trap MOS transistor above whose junction the electrons are to be erased are held at about 5 volts to about 6 volts. In the two-sided Substrate Enhanced Mode wherein the substrate 12 is at about −2 volts to about −3 volts, the gate 24 is held at about −6 volts to about −8 volts, and the first and second source/drain regions 14 and 16, respectively, of n-channel floating trap MOS transistor above whose junction the electrons are to be erased are held at about 5 volts to about 6 volts. The erase time for hot hole injection is about 1 ms to 5 ms.
In FIG. 2D, a table indicates the voltages applied to the floating trap MOS transistor 10 depicted in FIG. 1 for erasure by Fowler-Nordheim tunneling in either a Substrate Ground Mode or a Substrate Enhanced Mode. With Fowler-Nordheim tunneling, both of the areas above the junctions of the first and second source/drain regions 14 and 16, respectively, are erased at the same time. As set forth therein, in the Substrate Ground Mode wherein the substrate 12 is at about 0 volts, the gate 24 is held at about −12 volts to about −15 volts, and the first source/drain 14 of n-channel floating trap MOS transistor is held at about 0 volts or allowed to float, while the second source/drain 16 of the n-channel floating trap MOS transistor is held at about 0 volts or allowed to float. In the Substrate Enhanced Mode wherein the substrate 12 is at about 6 volts, the gate 24 is held at about −6 volts to about −8 volts, and the first source/drain 14 of n-channel floating trap MOS transistor is held at about 0 volts or allowed to float, while the second source/drain 16 of the n-channel floating trap MOS transistor is held at about 0 volts or allowed to float. The erasure time for Fowler-Nordheim tunneling is about 2 ms to 20 ms.
In FIG. 2E, a table indicates the voltages applied to the floating trap MOS transistor depicted in FIG. 1 for reading the floating trap MOS transistor in a Substrate Ground Mode. As set forth therein, in a n-channel floating trap MOS transistor with the p-type substrate 12 at about 0 volts, to read the charge trapped above a first junction associated with a first source/drain region 14 of the n-channel floating trap MOS transistor 10, the gate 24 of the n-channel floating trap MOS transistor 10 is held at about 3 volts to about 4 volts, and the first source/drain 14 of n-channel floating trap MOS transistor above whose junction the electrons are to be read is held at about 1 volt to about 2 volts, while the second source/drain 16 of the n-channel floating trap MOS transistor is held at about 0 volts. During the read, a sense of the current through the n-channel floating trap MOS transistor is performed to determine the programmed state of the floating trap device. In U.S. Pat. No. 5,768,192, a charge trapping device is described that is programmed using channel hot electron injection, and erased with tunneling enhanced hot hole injection. As described therein, a reverse read scheme is employed to enhance charge read sensitivity, wherein a read of the charge trapped above a first junction associated with a first source/drain region of an n-channel floating trap MOS transistor is performed by applying about 0 volts to a p-type substrate while applying about 3 volts to about 4 volts to the gate of the n-channel floating trap MOS transistor, 0 volts to the first source/drain region of the n-channel floating trap MOS transistor above whose junction the electrons are to be read, and about 1 volt to about 2 volts to a second source/drain 16 of the n-channel floating trap MOS transistor.
In FIG. 3, an n-channel floating gate silicon nanocrystal MOS transistor 30 according to the prior art is illustrated schematically in cross section. In n-channel floating gate silicon nanocrystal MOS transistor 30, a p-type region 32 formed by a p-type semiconductor substrate or p-type well formed in a semiconductor substrate has a first n-type source/drain (S/D) region 34 and a second n-channel source/drain region 36. A lower silicon dioxide layer 38 of about 20 to about 60 angstroms in thickness is disposed above the p-type region 32 and a portion of the source and drain regions 34 and 36, respectively. A layer of silicon nanocrystals 40 typically having diameters of about 40 angstroms to about 100 angstroms and spaced apart by about 40 angstroms to about 60 angstroms is disposed above the silicon dioxide layer 38. The silicon nanocrystal layer 40 forms a floating gate that traps charge as it is injected across the oxide layer 38 and into the silicon nanocrsytal layer 40. An upper layer of silicon dioxide 42 of about 60 angstroms is formed over the silicon nanocrystal layer 40. A polysilicon or metal conductive control gate 44 is disposed above the upper oxide layer 42. The upper oxide layer 42 functions to electrically isolate the conductive gate 44 from floating gate 40.
In a floating gate silicon nanocrystal MOS transistor, charge is stored (trapped) in or removed from after being trapped in the silicon nanocrystals. Unlike a conventional floating gate transistor, where charge stored on the polysilicon conductor may flow freely in the polysilicon conductor, charge stored in a floating gate silicon nanocrystal MOS transistor is localized to the region of the floating nanocrystal material above the source or drain where it was originally placed during programming. Accordingly, a bit of information may be stored above each of the junctions of a nanocrystal based MOS transistor for a total of two bits. This two-bit charge storage is analogous to the two-bit charge storage provided by a floating trap MOS transistor such as SONOS or MONOS. To program a floating gate silicon nanocrystal MOS transistor device both channel hot electron injection and Fowler-Nordheim tunneling have been employed. To erase a floating trap MOS transistor device both Fowler-Nordheim tunneling and tunneling enhanced hot hole injection have been employed
In FIG. 4A, a table indicates the voltages applied to the floating gate silicon nanocrystal MOS transistor 30 depicted in FIG. 3 for programming by channel hot electron injection in either a Substrate Ground Mode or a Substrate Enhanced Mode. As set forth therein, in the Substrate Ground Mode wherein the substrate 32 is at about 0 volts, the gate 44 is held at about 8 volts to about 9 volts, and the first source/drain 34 of n-channel floating gate silicon nanocrystal MOS transistor 30 above whose junction the electrons are to be trapped is held at about 0× volts, while the second source/drain 36 of the n-channel floating gate silicon nanocrystal MOS transistor is held at about 4 volts to about 5 volts. In the Substrate Enhanced Mode wherein the substrate 32 is at about −2 volts to about −3 volts, the gate 44 is held at about 6 volts to about 8 volts, and the first source/drain 34 of n-channel floating gate silicon nanocrystal MOS transistor above whose junction the electrons are to be trapped is held at about 0 volts, while the second source/drain 36 of the n-channel floating gate silicon nanocrystal MOS transistor is held at about 3 volts to about 4 volts. The programming time for channel hot electron injection is about 1 ms to about 5 ms.
In FIG. 4B, a table indicates the voltages applied to the floating gate silicon nanocrystal MOS transistor 30 depicted in FIG. 3 for programming by Fowler-Nordheim tunneling in either a Substrate Ground Mode or a Substrate Enhanced Mode. With Fowler-Nordheim tunneling, both of the areas above the junctions of the first and second source/drain regions 34 and 36, respectively, are programmed at the same time. As set forth therein, in the Substrate Ground Mode wherein the substrate 32 is at about 0 volts, the gate 44 is held at about 12 volts to about 14 volts, and the first source/drain 34 of n-channel floating trap MOS transistor is held at about 6 volts to about 7 volts, while the second source/drain 36 of the n-channel nanocrystal MOS transistor is held at about 6 volts to about 7 volts or allowed to float. In the Substrate Enhanced Mode wherein the substrate 32 is at about −6 volts to about −8 volts, the gate 44 is held at about 6 volts to about 8 volts, and the first source/drain 34 of n-channel nanocrystal MOS transistor is held at about −6 volts to about −8 volts, while the second source/drain 36 of the n-channel floating gate silicon nanocrystal MOS transistor is held at about −6 volts to about −8 volts. The programming time for Fowler-Nordheim tunneling is about 2 ms to 20 ms.
In FIG. 4C, a table indicates the voltages applied to the floating gate silicon nanocrystal MOS transistor 30 depicted in FIG. 3 for erasing either one or both areas above the source/drain junctions of source/drain regions 34 and 36, respectively, by hot hole injection in either a Substrate Ground Mode or a Substrate Enhanced Mode. As set forth therein, in the one-sided Substrate Ground Mode wherein the substrate 32 is at about 0 volts, the gate 44 is held at about −10 volts to about −12 volts, and the first source/drain 34 of n-channel floating trap MOS transistor above whose junction the electrons are to be erased is held at about 5 volts to about 6 volts, while the second source/drain 36 of the n-channel floating trap MOS transistor is allowed to float. In the one-sided Substrate Enhanced Mode wherein the substrate 32 is at about −2 volts to about −3 volts, the gate 44 is held at about −6 volts to about −8 volts, and the first source/drain 44 of n-channel floating gate silicon nanocrystal MOS transistor above whose junction the electrons are to be erased is held at about 3 volts to about 4 volts, while the second source/drain 36 of the n-channel floating gate silicon nanocrystal MOS transistor is allowed to float. In the two-sided Substrate Ground Mode wherein the substrate 32 is at about 0 volts, the gate 44 is held at about −10 volts to about −12 volts, and the first and second source/drain regions 34 and 36, respectively, of n-channel floating gate silicon nanocrystal MOS transistor above whose junction the electrons are to be erased are held at about 5 volts to about 6 volts. In the two-sided Substrate Enhanced Mode wherein the substrate 32 is at about −2 volts to about −3 volts, the gate 44 is held at about −6 volts to about −8 volts, and the first and second source/drain regions 34 and 36 respectively, of n-channel floating gate silicon nanocrystal MOS transistor above whose junction the electrons are to be erased are held at about 5 volts to about 6 volts. The erase time for hot hole injection is about 1 ms to 5 ms.
In FIG. 4D, a table indicates the voltages applied to the floating gate silicon nanocrystal MOS transistor 30 depicted in FIG. 3 for erasure by Fowler-Nordheim tunneling in either a Substrate Ground Mode or a Substrate Enhanced Mode. With Fowler-Nordheim tunneling, both of the areas above the junctions of the first and second source/drain regions 34 and 36, respectively, are erased at the same time. As set forth therein, in the Substrate Ground Mode wherein the substrate 32 is at about 0 volts, the gate 44 is held at about −12 volts to about −15 volts, and the first source/drain 34 of n-channel floating gate silicon nanocrystal MOS transistor is held at about 0 volts or allowed to float, while the second source/drain 36 of the n-channel floating gate silicon nanocrystal MOS transistor is held at about 0 volts or allowed to float. The erasure time for Fowler-Nordheim tunneling is about 2 ms to 20 ms.
In FIG. 4E, a table indicates the voltages applied to the floating gate silicon nanocrystal MOS transistor 30 depicted in FIG. 3 for reading the floating gate silicon nanocrystal MOS transistor in a Substrate Ground Mode. As set forth therein, in a n-channel floating gate silicon nanocrystal MOS transistor with the p-type substrate 32 at about 0 volts, to read the charge trapped above a first junction associated with a first source/drain region 34 of the n-channel floating gate silicon nanocrystal MOS transistor 30, the gate 44 of the n-channel floating gate silicon nanocrystal MOS transistor 30 is held at about 3 volts to about 4 volts, and the first source/drain 34 of n-channel floating gate silicon nanocrystal MOS transistor above whose junction the electrons are to be read is held at about 1 volt to about 2 volts, while the second source/drain 36 of the n-channel floating gate silicon nanocrystal MOS transistor is held at about 0 volts. During the read, a sense of the current through the n-channel floating gate silicon nanocrystal MOS transistor is performed to determine the programmed state of the floating gate silicon nanocrystal device.

Memory device with multiple memory layers of local charge storage


A coin sorting and counting machine and a method for operating it to automatically dispense cash vouchers based on the value of the counted coins, manufacturers"" coupons and store coupons. Coins are placed in a hopper tray angled downward from the horizontal. When the hinged tray is lifted, the coins travel over a peak structure, through a waste management system and into the coin sorting and counting apparatus. The value of the coins and the number of coins within each denomination are displayed as the coins are counted. The coins fall into a storage area and the user is issued a cash voucher and a series of manufacturer coupons.

The present invention relates to coupon dispensing machines and coin sorting machines.
There are a variety of machines which dispense stamps, tickets, coupons, money orders, bank transactions or the like. One type of machine, shown in U.S. Pat. No. 5,039,848 to Raymond Stoken, dispenses coupons in exchange for money. A display area indicates the different coupons available as well as the specific amount of money required to obtain each particular coupon. Money is inserted into the machine via a coin slot. Control circuitry determines which coupon has been selected, the amount of money required to purchase this coupon, and if the correct amount of money has been inserted into the coin slot. The control circuitry then causes the coupon dispenser to dispense the requested coupon.
Other machines dispense other types of products. For instance, U.S. Pat. No. 5,021,967 to Lawrence Smith is a money order dispensing machine. This machine is meant to be operated by a system operator, not a customer, and therefore does not require the capability to receive money. The machine prints money orders on a dot matrix printer after receiving the necessary data inputs from the operator.
Such previous devices are deficient from the point of view of a consumer with an arbitrary amount of coins, since they require the input of an exact coin value. Further, the device requires a mechanism for determining if the required amount has been deposited and for taking an appropriate action depending on whether the required amount is deposited.
A different variety of machines has been patented which sort coins. One such machine, shown in U.S. Pat. No. 4,995,848 to David Goh uses two methods to sort coins, both methods based on the diameter of the coins. In this machine the coins are loaded into a hopper. A rotating wheel feeds the coins individually onto an inclined ramp. The coins roll down the ramp with their rear surfaces resting against a support surface. Specific denominations are selected when they fall through slots of varying size located in the support surface. Specific denominations are also selected using peeler knives which are arranged at different distances from the ramp surface. These knives topple the coins from the ramp into bins. Using both techniques allows a short ramp to be employed. Another type of machine shown in U.S. Pat. No. 4,059,122 to Yoshio Kinoshita counts the number of coins according to denomination after sorting the coins.
Devices intended for counting/sorting coins are deficient in that the monetary value remains based in the coins, i.e., there is no transfer of the value from the medium of coins to a more convenient form such as a paper form.
Furthermore, a number of counting and sorting devices are deficient for certain other reasons. Many devices, while having some form of waste control device, have been unsuccessful in completely controlling waste which may be mixed in with coins. As a result, many previous devices are only suitable for operation by an experienced or skilled operator and are not suitable for use by the general public who may be less careful about including foreign or waste material among coins. In particular, many previous devices were designed to admit coins into the counting device at such a rate that it was not possible for each coin to be individually exposed to the waste control device, i.e., such that some coins may block others from the waste control system.
Some counting/sorting devices have had complicated or ineffective control of the flow of coins so that it was difficult, or expensive to prevent unacceptably high surges of coin flow from jamming or otherwise overwhelming the sorting/counting mechanism. Some devices were designed to permit only a slow entry of coins into the counting/sorting mechanism but, in some cases, this was done at the expense of the ability to accommodate a high volume of coins and/or has resulted in unacceptably slow operation.
Many previous devices have been designed with insufficient accommodation for maintenance and/or cleaning so that it was difficult or impossible to adequately clean, maintain and/or upgrade such previous devices.
Accordingly, it would be advantageous to provide a device which receives an arbitrary amount of coins, i.e., which does not require insertion of an exact minimum amount and which converts the value of the coin from the inconvenient medium of coins to a more convenient medium. It would be further advantageous to provide a device which provides for effective and efficient waste management such that the device can be used by the ordinary consumer without resulting in jamming or damage of the machine. It would also be advantageous to provide for a device which accommodates a high volume or flow of coins without permitting surges of coin flow which can interfere with the counting/sorting and/or waste management systems, without complicated electro/mechanical machinery and, preferably, taking advantage of a gravity mechanism. It would also be useful to provide a device which efficiently and conveniently provides the sorted coins in a standard sized coin bag which is conveniently accessible.
The present invention provides an apparatus which can receive a number of unsorted coins. The coins are sorted and counted to determine a total value. The user is issued a voucher for an amount related to the total value.
The present invention offers a valuable service to the retailer in whose store this machine is placed as well as to the actual user. People tend to collect coins at home, finding that carrying large quantities of coins is unwieldy and impractical. Furthermore, spending coins normally requires either placing the coins singularly into product dispensing machines or counting the coins out by hand. This invention allows the user to periodically exchange excess coins for cash vouchers. The user need not first count the coins since the present invention automatically counts the coins. The advantages to the retailer are numerous. First, although the voucher is exchangeable for cash or merchandise, most customers are likely to purchase goods at the store where they exchange their coins. Second, by offering a convenience to their customers, retailers gain the goodwill of these customers. Thus, the present invention provides a voucher issuing machine in which the amount of the voucher is not preset, and also allows coin sorting by a typical consumer.
In one embodiment coins are placed in a hinged hopper tray or xe2x80x9ccoin trayxe2x80x9d built into one of the machine""s surfaces. To activate the process the user presses a xe2x80x9cstartxe2x80x9d button (preferably a xe2x80x9csoftxe2x80x9d button) and then lifts one edge of the tray, causing the coins to fall down a chute to the high speed coin sorting and counting mechanism. Preferably, the hopper tray is configured to be angled downward and away from the chute or xe2x80x9ctransfer tray.xe2x80x9d Thus, the hopper, in the lower position, and the transfer tray form an angled or peaked structure which the coins must travel over in order to enter the transfer tray. Preferably, the angles of the transfer tray and hopper are configured such that, as the hopper is lifted, the coins travel over the peak substantially in a single layer such that there is little or no substantial overlie or blocking of a coin travelling over the peak by other coins. After travelling over the peak, the coins pass through a gate or slot. The gate or slot is preferably opened or closed by a solenoid control mechanism.
A waste control system includes a fan, a magnetic system, and various types of perforations in the hopper and the transfer tray. Preferably, the fan blows in a direction from clean-to-dirty, over the top of the hopper, thus blowing each coin individually as it passes over the peak. In one embodiment, there is a split-path or dual path for the cleaning airflow, one path being over the peak and another path being up through the hopper perforations. Preferably, the magnet is configured at or near the peak such that each coin (or waste item) is exposed to the magnet without being blocked by other coins or items. Coins are counted and sorted by denomination and then dropped into standard-sized coin bags. In one embodiment, as the coins are counted, the total monetary value is displayed on a video screen as well as the number of coins counted within each denomination. A controller prints and dispenses a cash voucher to the user via a slot in the machine""s surface.
Besides exchanging cash vouchers for coins, one embodiment of the invention dispenses manufacturers"" coupons from a separate slot redeemable for various bargains. These coupons are dispensed at no cost to the user. Preferably, this coupon dispenser can operate either in conjunction with, or independently from the coin sorter and voucher dispenser. A second type of coupon to be dispensed in one embodiment are store coupons. In one embodiment, these coupons are good only for specific bargains unique to that store (or chain of stores). For example, the store manager may have a surplus of a particular item and therefore wish to offer a xe2x80x9ctwo-for-onexe2x80x9d bargain for a limited time. Selected products and bargains may also be promoted on the video display. These promotional techniques have the advantage of being easily alterable; thus an individual store manager can tailor the store coupons/ads depending upon factors such as the time of day (e.g., midday grocery store shoppers versus after work shoppers versus late night shoppers) while the chain store owner can vary the store coupons/ads depending upon a particular store""s location and needs (e.g., deli shop versus bakery shop versus floral shop).
Generally, in the prior art, coins are either inserted into a machine singularly, or in the case of large commercial sorting machines, by trained personnel. In the present invention, non-trained personnel will dump large amounts of coins into the hopper tray. These untrained users are likely to empty their personal containers, such as old cans or bottles, directly into the hopper without first inspecting the coins. Thus lint, tokens, liquids and various other objects will probably accompany the coins into the machine. Therefore, a method of waste management is used to insure that the machine is not damaged during use.
In one embodiment, the user dumps coins into a hopper tray which doubles as an inspection area. The bottom of the hopper tray is perforated, thus allowing small foreign objects to fall through the perforations instead of entering the coin sorting mechanism. While the coins are in the hopper, the user has an opportunity to remove large foreign objects. The perforations also permit a flow of air, preferably in a direction up through the bottom of the hopper tray and away from the peak and/or the machine, to blow light material off the coins. After inspecting the coins, the user first presses a xe2x80x9cgoxe2x80x9d button indicating the wish to use the machine, and then lifts one edge of the hinged tray, causing the coins to fall down a waste management chute. If desired or needed, the user can guide coins out of the hopper and over the peak by hand. The chute leads to the coin sorting and counting mechanism. In one embodiment, when the xe2x80x9cgoxe2x80x9d button is pressed, the coin sorter starts, the coin counter is initialized, and a fan within the waste management chute is activated. The fan blows light weight debris, such as lint and dust, out of the chute and away from the coin counter/sorter mechanism. The bottom surface of the waste management chute is a grooved and porous plate which allows any fluids dumped into the machine to be removed from the coins and collected. This helps to avoid possible damage to the machine. Magnetic strips are placed preferably along the entrance and exit areas of the chute, to extract any magnetic or magnetically susceptible items, such as magnetic tokens and/or foreign coins which may have been included with the coins.
In one embodiment, the device includes features to prevent undesired surges in the flow of coins, e.g., to prevent or avoid jamming and to assist in waste management. The peak configuration between the hopper and the transfer tray described above, contributes to controlling the flow of coins into the hopper tray since the configuration provides that the coins will be moved over the peak in single layers or planes thus, avoiding excessive coin flow surges. The coins, after travelling over the peak, pass through a gate, having a height adjusted to further assure that coins travel down the transfer tray in single layers or planes. Preferably, the gate can be closed or opened, e.g., by a solenoid-controlled gate so that movement of items down the transfer tray is blocked until the desired time (e.g., until the user has pressed the xe2x80x9cgoxe2x80x9d button and/or has initially lifted the hopper). Further, the pivoted hopper tray, because of its angle in the lower or resting position, provides for self-clearing since, when the hopper is lowered to its resting position, the coins tend to fall away from the peak and the chute, back into the hopper and do not continue to move over the peak in normal conditions.
Preferably, the apparatus is controlled by an intelligent controller, e.g., a computer such as a 486-class computer, and is provided with multiple resources and capabilities for interaction with the user, with the store owner or other manager of the apparatus and with maintenance services and/or personnel. In one embodiment, the computer includes a sound board for providing aural communication as well as video communication. In one embodiment, the computer includes a modem for remote communication to, for example, a central or a regional (out of store) location, e.g., for downloading information such as new coupons, additional video or audio displays, sales or other promotional information and the like. In one embodiment, the modem can also be used for communication with maintenance services or personnel, for example, for diagnosing malfunctions, downloading modifications or upgrades to the software and the like. Preferably, the computer can retain and transfer statistical information such as information relating to customer usage of the sorter/counter, customer usage of dispensed coupons and the like.
In one embodiment, the device is configured for ease of construction, maintenance, and cleaning. For example, in one embodiment, the device is configured so that all major components can be fully exposed, (e.g., by opening doors) without being obstructed by cross-bracing or other supports. Preferably, many components are mounted on rails or rollers so that they can be fully or partially withdrawn for cleaning and/or maintenance.

Coin counter/sorter and coupon/voucher dispensing machine and method


A sheet having indicia to indicate a one month time period and then with each month divided into days. Each sheet is provided with a slot that provides entry to a receptacle that is attached to the back of the sheet, thus keeping a portion of an inserted reminder card for an appointment or task remains easily visible for a user. General use appointment and task cards permit the user to tailor the time and date management apparatus to particular needs. Reminder cards could be color coded to indicate the type of task or appointment. Reminder cards can also be dimensioned to substantially the same size as a standard business card or appointment card such as used by a doctor or dentist.

The use of calendars to manage time and appointments is well known in the art. The need for handling multiple tasks and appointments is found in many different types of situations. Situations where people face numerous appointments are thus difficult to manage. Examples of such situations that are difficult to manage are found in sales workplaces requiring multiple client visits and in a home where a person must self-administer many different types of medications.
Typical calendars fall into three general categories: preprinted paper, dry-erase boards, and computer software. The first two require a person to manually transcribe with pen or pencil the appointments and tasks onto a surface area, while the third type requires a computer for use and enjoyment.
The problem with manually transcribing information on a preprinted paper calendar is that the information often times will not fit within the finite space provided by a calendar. Additionally, with preprinted paper calendars when appointments and tasks are rescheduled or recurring they must be written out once again. Finally, with preprinted paper calendars, a person runs the risk of overlooking appointments or tasks once the information in the portioned area becomes too voluminous.
Like preprinted paper calendars, the second category, dry-erase boards, present some of the same limitations, especially as problems relate to a finite area of space within which to record information. Admittedly, one improvement of dry-erase boards over preprinted paper calendars is that a person can remove and re-record information faster than with a preprinted paper calendar. Nonetheless dry-erase boards still require rescheduled or recurring appointments or tasks are written out one at a time. Finally, dry-erase boards present two problems unique from preprinted paper calendars. First, ink on a dry erase board will often times smudge, contributing to confusion. Second, when ink on dry-erase boards is erased a bothersome residue is often left behind, potentially damaging clothing or at the very least presenting a nuisance by amassing on a person's skin.
The third general category of calendars, computer software, offers some distinct improvements over earlier preprinted paper and dry-erase boards. Much more information can be stored within a certain space on a computer software calendar, displays can be manipulated according to the preference of the user, and recurring appointments are recorded with relative ease. However, computer software calendars are limited in two areas: the overall monthly or yearly view of the calendar is constrained by the size of the computer's monitor, and the use and enjoyment of the computer software calendar requires that the user has already made a costly economic investment—the purchase of a computer.
A calendar that is designed to hold standard business cards or pre-printed appointment cards in a pocket corresponding to the due date is not found in the prior art.


A dry friction material comprises fiber base material, bonding agent, friction conditioner and filler. The dry friction material contains 2 to 20% by weight of a tin alloy in which the fusing point is more than 500.degree. C. and the hardness is less than 4 Moh's. The dry friction material shows excellent friction characteristics when the load is low or average.

1. Field of he Invention
The present invention relates to a dry friction material which is suitable for use as a clutch facing or a disk brake pad of automobiles, industrial machinery, railway rolling stocks and so on.
2. Description of the Related Art
A friction material requires a high and stable friction coefficient, and excellent wear resistance. It is difficult for a single raw material to satisfy these performances. So, a composite material in which many raw materials are mixed is more suitable for a friction material.
The above-mentioned friction materials are classified as follows:
(1) cork, cellulose: A few of them are single substances. Most of them are impregnated with resin and completed by thermoforming.
(2) woven: It is produced by the following manner. A string which is made of asbestos or organic fiber is impregnated with resin. The string is wound round a core which is made of glass fiber or brass wire. Then, thermoforming is performed.
(3) semi mould: It is produced by the following manner. A string is impregnated with resin. A rubber material is charged into the string. Then, thermoforming is performed.
(4) resin mould: It is produced by the following manner. A base material which is made of asbestos or glass fiber is mixed with phenol resin and many kinds of fillers. Then, thermoforming is performed.
(5) rubber mould: It is produced by the following manner. A base material which is made of asbestos or glass fiber is mixed with rubber and many kinds of fillers. Then, thermoforming is performed.
(6) semi metallic: It is produced by the following manner. A base material which is made of metal fiber is mixed with rubber and many kinds of fillers. Then, thermoforming is performed.
(7) sintered metallic: It is produced by the manner that metal powder is sintered.
(8) cermet: It is produced by the manner that ceramic powder and metal powder are sintered.
Among these, semi mould or resin mould is preferably used as a friction material of automobiles. For example, the friction material which is suitable for use as a clutch facing of automobiles is produced by the following manner. A base material which is made of glass fiber is impregnated with phenol resin and compounded rubber. Then, thermoforming is performed.
Conventionally, a dry friction material comprises fiber base material, bonding agent and friction conditioner. In the dry friction material, carbon black, graphite, cashew dust or a lead compound such as lead sulfide or lead sulfate is used as lubricant to improve wear resistance. Especially, cashew dust and the lead compound are useful to improve wear resistance when the load is low or average. However, cashew dust is effective only at the temperature in narrow ranges, and anti fade deteriorates and a friction coefficient decreases. On the contrary, the lead compound is effective at the temperature in wide ranges, and wear resistance remarkably improves. Though, usage control of the lead compound recently progresses on account of environmental contamination or pollution. So, it is necessary to substitute other materials for the lead compound.


A method and apparatus for etching a photomask substrate with enhanced process monitoring is provided. In one embodiment, a method of determining an etching endpoint includes performing an etching process on a first tantalum containing layer through a patterned mask layer, directing a radiation source having a first wavelength from about 200 nm and about 800 nm to an area uncovered by the patterned mask layer, collecting an optical signal reflected from the area covered by the patterned mask layer, analyzing a waveform obtained the reflected optical signal reflected from the substrate from a first time point to a second time point, and determining a first endpoint of the etching process when a slope of the waveform is changed about 5 percent from the first time point to the second time point.

1. Field of the Invention
Embodiments of the present invention generally relate to the fabrication of integrated circuits and to the fabrication of photomasks useful in the manufacture of integrated circuits.
2. Description of the Related Art
In the manufacture of integrated circuits (IC), or chips, patterns representing different layers of the chip are created by a chip designer. A series of reusable masks, or photomasks, are created from these patterns in order to transfer the design of each chip layer onto a semiconductor substrate during the manufacturing process. Mask pattern generation systems use precision lasers or electron beams to image the design of each layer of the chip onto a respective mask. The masks are then used much like photographic negatives to transfer the circuit patterns for each layer onto a semiconductor substrate. These layers are built up using a sequence of processes and translate into the tiny transistors and electrical circuits that comprise each completed chip. Thus, any defects in the mask may be transferred to the chip, potentially adversely affecting performance. Defects that are severe enough may render the mask completely useless. Typically, a set of 15 to 30 masks is used to construct a chip and can be used repeatedly.
The next generation photomask as further discussed below is formed on a low thermal expansion glass or a quartz substrate having a multilayer film stack disposed thereon. The multilayer film stack may include an anti-reflective coating layer, an absorber layer, a capping layer, and a reflective multi-material layer. When manufacturing the photomask, a photoresist layer is disposed on the film stack to facilitate transferring features into the film stack during the subsequent patterning processes. During the patterning process, the circuit design is written onto the photomask by exposing portions of the photoresist to extreme ultraviolet light or ultraviolet light, making the exposed portions soluble in a developing solution. The soluble portion of the resist is then removed, allowing the underlying film stack exposed through the remaining photoresist be etched. The etch process removes the film stack from the photomask at locations where the resist was removed, i.e., the exposed film stack is removed.
With the shrink of critical dimensions (CD), present optical lithography is approaching a technological limit at the 45 nanometer (nm) technology node. Next generation lithography (NGL) is expected to replace the conventional optical lithography method, for example, in the 32 nm technology node and beyond. There are several NGL candidates, such as extreme ultraviolet (EUV) lithography (EUVL), electron projection lithography (EPL), ion projection lithography (IPL), nano-imprint, and X-ray lithography. Among these, EUVL is the most likely successor due to the fact that EUVL has most of the properties of optical lithography, which is a more mature technology as compared with other NGL methods.
Accordingly, the film stack is being developed to have a new film scheme so as to work with the EUV technology to facilitate forming the photomask with desired features disposed thereon. The film stack may include multiple layers with different new materials to be etched to form the desired features. Imprecise etch process and etch endpoint control may result in critical dimension (CD) bias, poor critical dimension (CD) uniformity, undesired cross sectional profile and etch critical dimension (CD) linearity and unwanted defects. It is believed that EUV technology may provide good CD uniformity, less etching bias, desired linearity, less line edge roughness, and high thickness uniformity and less defectivity.
As the new developed film stack described above includes an anti-reflective coating layer, an absorber layer, a capping and a reflective multi-material layer, obtaining precise etching endpoint for each of the layers being etched is becoming more and more difficult. Inaccurate etch endpoint control will often result in etch bias which may result in accurate transfer of the patterns to the film stack with desired critical dimension less than about 5 μm, such as about 50 nm to about 500 nm. This results in non-uniformity of the etched features of the photomask and correspondingly diminishes the ability to produce features for devices having small critical dimensions using the photomask. As the critical dimensions of photomask continue to shrink, the importance of accurate etching endpoint control increases. Thus, an accurate etching process endpoint control to the film stack disposed on the photomask for EUV technology is highly desirable.
Therefore, there is an ongoing need for improved etching endpoint process control in photomask fabrication, including improved apparatus and methods for collecting etch rate data and determining process endpoints.

Etch rate detection for anti-reflective coating layer and absorber layer etching


A setting tool for use inside a well bore casing having an upper portion, a lower portion, and a wrap spring. The upper portion includes a mandrel coupled to a connecting line. The upper portion is configured to receive an input. The lower portion includes a first sleeve configured translate along an axis of the setting tool. The lower portion is selectively coupled to the upper portion. The wrap spring has a torsional preload and is coupled to the upper portion and the lower portion. The wrap spring is configured to selectively release the lower portion and upon reception of the input, such that the first sleeve is permitted to translate along the axis.

1. Field of the Invention
The present application relates to setting tools for use in well bores, as well as methods of using such setting tools. In particular, the present application relates to a hydrostatic setting tool.
2. Description of Related Art
Prior downhole tools are known, such as frac plugs and bridge plugs. Such downhole tools are commonly used for sealing a well bore. These types of downhole tools are usually coupled to a setting tool and typically can be lowered into a well bore in an unset position until the downhole tool reaches a desired setting depth. Upon reaching the desired setting depth, the downhole tool is set, or activated, by firing explosive charges or by transmitting electrical signals within the well bore.
Such methods are typically more complex and generally generate more risk. For example, there is a risk that the electrical setting signal could prematurely fire a perforating gun or short out. Additionally, the cost of using explosives can be expensive and hazardous. Likewise, the turn around time required to reset the setting tool for another use is typically lengthened due to the care and precautions dealing with explosives. A safer, more simplified, and cost effective method of setting downhole tools is needed.
Although the foregoing designs represent considerable advancements in the area of setting tools, many shortcomings remain.
While the downhole tool of the present application is susceptible to various modifications and alternative forms, specific embodiments thereof have been shown by way of example in the drawings and are herein described in detail. It should be understood, however, that the description herein of specific embodiments is not intended to limit the invention to the particular embodiment disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the process of the present application as defined by the appended claims.

This patent is subject to a terminal disclaimer.


A method of making flechettes employing the use of a progressive die which forms (a) wire that results in the flechette, and (b) strip material that results in a carrier for the finished flechettes. The carrier, which is a bandolier apparatus, is used for progressing the flechette through the progressive die at various forming stations. After forming of the flechette in the die is complete, the final flechette can be severed from the bandolier, or the flechette can remain intact with the bandolier for post-forming operations, such as coating/finishing. The bandolier is thus a novel approach to transporting the flechettes in both forming and post-forming processing.

The present invention relates to bandoliered flechettes, and to a method for making bandoliered flechettes.
Flechettes are dart-like projectiles that are shaped for aerodynamically stable flight and used as anti-personnel weapons. Each flechette defines a tip at one end that leads the flechette during flight, and fins at the other end that stabilize the flechette during flight. The flechettes are packed into a cylindrical shell, and the entire assembly is fired toward the desired target. The shell explodes near the target and releases the flechettes, which are propelled, tip first, toward and penetrate the target.
Flechettes are commonly produced with a method that employs a modified common nail-making machine. The technology used in nail-making machines has been in existence for many years. This known method of manufacturing flechettes involves supplying the machine with coiled wire, feeding the wire into the modified nail machine, forming the tip and fins, cutting the wire, and expelling the formed flechette as a single, loose-pieced item. There are manufacturing inefficiencies and quality concerns associated with the use of this method. First, the method is quite slow—generally less than 100 parts per minute, per nail machine and, typically, approximately 60 parts per minute. Second, the cost of each part produced is high. Third, the quality of the finished pieces is relatively low. In particular, the use of a modified nail-making machine to make the flechettes occasionally leaves residual slivers of materials, or burrs, on the fins or tips of the flechettes. Burrs are commonly produced by the prior art method of manufacturing due to the fact that this method processes the wire continuously. That is, the flechettes are formed on a single strand of wire, and then are cut to separate them from each other. Thus, the tip and fins of adjacent flechettes are connected together when they are formed on the wire, and the flechettes are separated by cutting the strand between the fins and tip of the adjacent flechettes. It is at the area where this cut is made that the burrs are sometimes produced. This method can produce a hook-shaped burr on the tip of the flechette or a burr on the fins. The burred tip can cause the flechette to be unstable in flight. Flechettes with burred fins are unacceptable because they cannot be packed into the cylindrical shell properly. In either case, the burred flechettes must be either further reworked or discarded, either of which adds to the cost of productions. Finally, certain operations often must be performed on the loose flechettes after they are formed on the wire and separated from each other. The post-forming operations which can occur in the manufacture of flechettes include heat treating, coating or finishing (for example, coating the flechettes with zinc phosphate), and various assembly operations (for example, assembly of flechettes into a cylindrical shell device). These operations often require that the flechettes be arranged in a desired pattern. For example, the operation of assembling the flechettes in a cylindrical shell requires that all the flechettes be so oriented that all the fins point in one direction, and all the tips point in the opposite direction. However, the prior art method of manufacturing yields completed parts in the form of loose pieces that are oriented in different directions. Therefore, the current method does not lend itself easily to the post-formation operations.
Therefore, there is a need for a method for producing flechettes that improves the rate of production, lowers the per piece cost, and improves the quality and consistency of the flechettes, while at the same time facilitating the handling and conveying of the flechettes during post-forming operations.

Bandoliered flechettes and method for manufacturing bandoliered flechettes


A fluid pressure control device, including a pressurized fluid inlet, a first valve in fluid communication with the pressurized fluid inlet and controlling the flow of fluid from the pressurized fluid inlet, a first pressure measurement device detecting a fluid pressure downstream of the first valve, and a controller electrically coupled to the first valve. The first pressure measurement device causes the controller to operate the first valve such that a fluid downstream of the first valve is maintained at a substantially constant pressure.

1. Technical Field
The present disclosure is directed to a fluid pressure control device. More particularly, the present disclosure is directed to a system and method for supplying gas at a substantially constant pressure to calibrate a chemical analyzer, such as a blood gas analyzer.
2. Background of Related Art
Chemical analyzers measure a wide range of parameters in various fluids, for example, blood components. In order to calibrate some chemical analyzers, a pressurized fluid canister is provided to supply pressurized gases to the chemical analyzer in incremental measurement cycles. Calibration gases are typically a mixture of Nitrogen (N2), Oxygen (O2), and Carbon dioxide (CO2). One type of chemical analyzer device, available from OPTI Medical Systems, employs a single-use cassette containing elements required for calibration of the chemical analyzer device. As heat is applied to the cassette, a calibration gas mixture is passed across the device sensors.
In many gas calibration systems used in chemical analysis, the pressure of the gas flowing from the pressurized fluid canister is governed by a mechanical pressure regulator. The regulator ensures that gas is supplied to the device within a desired pressure range. Other gas calibration systems employed in chemical analyzers maintain sensor integrity of the analyzer by using refrigerated storage of the sensors themselves, or employ liquid mixing systems to ensure proper operation. However, as can be imagined, the addition of refrigeration systems and/or liquid mixing features increases the complexity of such systems and provides additional sources of error or failure in the use of such systems. Further, gas calibration systems that employ liquid mixing or refrigeration require a steady supply chain of refrigerants, and a demanding maintenance cycle.
One concern associated with current systems to calibrate, for example, a blood gas analyzer, surrounds the relative high pressure of the canister of fluid. Canisters of fluid pressurized in excess of 30 psi are typically classified as hazardous goods for air transportation purposes, and thus are subject to high shipping costs. Similarly, canisters of fluid pressurized in excess of 60 psi are often categorized as hazardous goods for ground transportation. Thus, for many current canisters of fluid, the associated shipping costs can approach or even exceed the cost of the canister of fluid to the consumer.
Another concern associated with the mechanical pressure regulators currently in use is that they incur high costs relative to other components of the fluid pressure control device and chemical analyzer. Often this one component is the single most expensive component of the fluid pressure control device and the chemical analyzer.
Yet a further drawback of mechanical pressure regulators is that they require periodic purging because of CO2 diffusion through the various seals and diaphragms of the mechanical pressure regulator. This problem is compounded over longer periods of operation. Thus, because of the periodic purging, a significant portion of the gas stored in the canister of fluid is simply wasted to ensure that the calibration gas used in calibration is comprised of the appropriate proportions of CO2 and other gases. Moreover, in order to function properly mechanical pressure regulators require a minimum pressure in the pressurized fluid canister. Once the pressure in the canister drops below the threshold pressure, typically about 25 psi, the remaining volume of gas in the canister of fluid is simply wasted.
Accordingly, it is desirable to provide a fluid pressure control device to supply calibration gases to a chemical analyzer that employs a relatively low-pressure canister of fluid and avoids the need for a mechanical pressure regulator, thereby avoiding the waste, high costs, and maintenance associated with current systems.

Fluid pressure control device for an analyzer


In one aspect, the invention described herein provides an enclosure for containing telecommunication lines and/or telecommunication line splices therein. In one embodiment, the enclosure comprises a housing wherein the housing is removeably securable to the base. The base includes an edge wall extending from the bottom plate of the base. A sealing member is disposed on an outer surface of the edge wall. The housing includes an outer side wall and an inner lip spaced apart from the outer side wall. When the housing is secured to the base, the edge wall of the base is inserted between the outer side wall and the inner lip.

Telecommunication cables are ubiquitous and used for distributing all manner of data across vast networks. The majority of cables are electrically conductive cables (typically copper), although the use of optical fiber cable is growing rapidly in telecommunication systems as larger and larger amounts of data are transmitted. Additionally, as data transmissions increase, the fiber optic network is being extended closer to the end user which can be a premise, business, or a private residence.
As telecommunication cables are routed across data networks, it is necessary to periodically open the cable so that one or more telecommunication lines therein may be spliced, thereby allowing data to be distributed to other cables or "branches" of the telecommunication network. At each point where a telecommunication cable is opened, it is necessary to provide a telecommunications enclosure to protect the exposed interior of the cable. The cable branches may be further distributed until the network reaches individual homes, businesses, offices, and so on. These networks are often referred to as fiber to the premises (FTTP) or fiber to the home (FTTH) networks.
Commonly, the enclosure has one or more ports through which cables enter and/or exit the enclosure. Once inside the enclosure, the cable is opened to expose the telecommunication lines therein. Conventional telecommunication enclosures are constructed to facilitate the management and protection of individual telecommunication lines and splices thereof. For example, conventional enclosures have re-enterable housings and are designed to incorporate splice trays to assist a craftsman in creating a splice connection between two telecommunication lines. Once all required splices are made, the enclosure is secured to protect the opened portion of the cable from moisture, dust, insects, and other hazards.
After an enclosure is closed and secured, it must satisfy several technical performance requirements to ensure reliable protection of the opened portion of the cable and various other electronic or optical components within the enclosure. For example, the enclosure must satisfy various environmental related requirements, such as corrosion, insect resistance, and water resistance. Molded polymer enclosures are generally preferred, as they most easily satisfy the environmental requirements, in addition to being more easily produced. However, harsh environmental conditions may cause shifting, movement or distortion of one or more parts or portions of a telecommunication enclosure which can result in a change in the relative position of the housing with respect to the base. If this change in position is sufficient to affect the seal between the base and the housing, the telecommunication enclosure will be compromised which could interrupt the communication network.

Telecommunication enclosure with an interlocking seal


An anthelmintic composition including an Antibiotic S541 compound or a chemical derivative thereof, together with an insoluble anthelmintic compound. The composition is stabilized by between about 0.15% and about 5.0% of an antioxidant by weight of the total composition.

The invention relates to stable anthelmintic compositions combining two or more active compounds.
When formulating anthelmintic compositions it is necessary that the compositions maintain the stability of the active compounds in those compositions. In particular, it is necessary to maintain the stability in order to allow for the compositions to be prepared well in advance of their intended use.
UK Patent Specifications 2166436, 2176182 and 2187742 and EP170006 describe antibiotic compounds, designated Antibiotics S541, prepared by fermentation of Streptomyces microorganisms and chemical derivatives thereof. The disclosure of these UK and EP documents are incorporated herein by reference. Such compounds have antibiotic, and, in particular, anti-endoparasatic, anti-ectoparasitic, anti-fungal, insecticidal, nematicidal and acaricidal activity and are of special use in agriculture, horticulture and animal and human health. These compounds include the avermectin and milbemycin groups of compounds.
EP329460 discloses that the stability of these antibiotic compounds can be enhanced when they are in the presence of an antioxidant. In particular, EP329460 refers the stabilisation of a group of Antibiotic S541 derivatives described in UK2192630A and in particular to 23[E]-methoxyimino Factor A, also known as moxidectin. A variety of antioxidants are disclosed in EP329460 as useful for stabilisation (which are herein incorporated by way of reference) with particular reference to butylated hydroxytoluene (BHT). These antioxidants are disclosed as being present in amounts ranging from 0.005 to 1% with respect to the antibiotic compounds.
It has now been discovered that these antibiotic compounds may be unstable when in the presence of an antioxidant as described in EP329460, when the antiobiotic compounds are combined with another active material to form a combination anthelmintic composition.
It is an object of the invention to provide a stable anthelmintic composition including antibiotic compounds as described above together with other active compounds.
Other objects of the invention will be apparent to those skilled in the art from the description and examples provided herein.
In broad terms, according to one aspect of the invention, there is provided an anthelmintic composition including an avermectin or a milbemycin, together with praziquantel, wherein the composition is stabilised by between about 0.15% and about 5.0% of an antioxidant by weight of the composition.
In broad terms, according to another aspect of the invention, there is provided an anthelmintic composition combining an Antibiotic S541 compound preparable by fermentation of a Streptomyces microorganism, or a chemical derivative thereof, and another anthelmintically active compound, wherein the composition is stabilised by between about 0.15% and about 5.0% of an antioxidant by weight of the total anthelmintic composition.
In broad terms, according to a further aspect of the invention, there is provided a method of stabilising an anthelmintic composition which combines an Antibiotic S541 compound preparable by fermentation of a Streptomyces micro organism, or a chemical derivative thereof, and another anthelmintically active compound, the method including the addition of between about 0.15% and about 5.0% of an antioxidant by weight of the total composition.
Preferably the amount of the antioxidant is between about 0.2% and about 3.0% by weight of the total composition and more preferably is between about 0.2% and 0.3% by weight of the total composition. Most preferably the amount is 0.25% by weight.
Preferably the amount of antioxidant is in addition to antioxidant used to stabilise the Antibiotic S541 compound or derivative prior to its inclusion in the anthelmintic composition.
Preferably the antioxidant is one which is capable of reacting with free radicals and may be a C1-12 alkyl gallate, benzyl hydroxybenzoate, butylated hydroxyanisole, butylated hydroxytoluene, quinones and salts thereof, nodihydroguaiaretic acid, or tocopherols.
Preferably the antioxidant is butylated hydroxytoluene (BHT).
Preferably the Antibiotic S541 compound or derivative thereof is an avermectin or a milbemycin.
Preferably the Antibiotic S541 compound or derivative is abamectin, ivermectin, doramectin, selemectin or moxidectin.
Preferably the anthelmintically active compound is an insoluble compound such as praziquantel or an insoluble benzimidazole.
Preferably the composition is an oral drench composition.
In another aspect, the invention may be seen to be an oral anthelmintic drench formulation including moxidectin technical concentrate (MTC) or moxidectin technical material (MTM), and praziquantel, wherein the formulation is stabilised by the inclusion of between about 0.15% and about 5.0% of BHT by weight of the formulation, the BHT being in addition to BHT present in the MTC or MTM.
This invention relates generally to improvements in the stability of anthelmintic compositions which include, as one of the active components, the Antibiotics S541 which have been referred to previously herein. As has been stated, the use of antioxidants, such as BHT, to stabilise certain antibiotic compounds is known. This knowledge is used in the preparation of technical material and technical concentrate solutions of antibiotic compounds, such as those derived from the fermentation of Streptomyces microorganisms, and chemical derivatives thereof, which are later used for the preparation of veterinary and human pharmaceutical compositions.
Typical antibiotic compounds of use in the compositions according to the invention are the avermectins (e.g., abamectin, ivermectin, doramectin, selemectin) and the milbemycins (e.g., moxidectin).
A particular example is the production of moxidectin technical material and moxidextin technical concentrate, both of which include between about 0.3 and 0.6% of the antioxidant BHT. This technical material or concentrate can be stored for a suitable length of time in order that commercial products can be prepared which include the active material. For example, the American Cyanamid Company products CYDECTIN(copyright) and VETDECTIN(copyright) liquid compositions are prepared using moxidectin technical material or moxidectin technical concentrate. Both these commercial products have excellent stability as is well known.
Both CYDECTIN(copyright) and VETDECTIN(copyright) include one active material, moxidectin, which is stabilised by the BHT originally present in the technical material or concentrate of moxidectin used to produce the commercial product.
It is therefore surprising that when this moxidectin technical material or concentrate is used to produce an anthelmintic composition that combines moxidectin with another anthelmintic compound, suitable stability of the moxidectin was not achieved. This difficulty has been specifically observed when the other anthelmintic compound used in the composition is the insoluble compound praziquantel present in the composition as a suspension. Without wishing to be bound by this, as the other individual components in the formulation are relatively standard in the formulation art, it seems that it may be an effect of the insoluble praziquantel that destabilises the moxidectin. It is also possible that it is an effect of the combination of components required to keep the praziquantel in suspension in the formulation that results in this destabilising effect.
In order to achieve stability of moxidectin to suitable levels (e.g., above 95% for longer than three (3) months) it has been found necessary to include additional amounts of an antioxidant such as BHT into the formulation. A suitable amount of additional antioxidant is above about 0.15% of antioxidant by weight of the total composition and preferably below about 5.0% by weight. More preferably, the amount of BHT added by weight of the total composition is between 0.2% and 3.0% and more preferably between about 0.2% and 0.5% by weight of the composition. Most preferably the amount is about 0.25% by weight.
It is hypothesised that, as other antibiotic compounds in the S541 series can also be stabilised by antioxidants such as BHT, their use with insoluble compounds such as praziquantel will also require additional antioxidant to maintain stability. Further, it is hypothesised that the inclusion of other insoluble anthelmintics, such as the insoluble benzimidazoles, may also affect the stability of the antibiotic compounds when used in combination.
The antioxidant of preferred use in the compositions according to the invention is butylated hydroxytoluene (BHT). Other antioxidants could also include those disclosed in EP329460 such as those which are capable of reacting with free radicals, including a C1-12 alkyl gallate, benzyl hydroxybenzoate, butylated hydroxyanisole, quinones and salts thereof, nodihydroguaiaretic acid, or tocopherols.
It is known that compounds such as citric or phosphoric acid can act as synergists for some antioxidants such as butylated hydroxyanisole (BHA). It may be that it is necessary for the compositions to include both the extra antioxidant and citric acid to allow the stability levels needed, to be achieved. Preferably the composition will also include between about 0.1% and 1.5% w/v of citric or phosphoric acid. Such compounds are usually present primarily as a buffering agent.
The invention can therefore also be seen to be directed to a method of preparing a stable composition which combines an Antibiotic S541 compound, or chemical derivative thereof (preferably an avermectin or milbemycin), with another anthelmintically active compound, which is preferably praziquantel, wherein the method includes the step of adding between about 0.15% and about 5.0% by weight of the total composition of an antioxidant, which is preferably BHT. In a preferred form the method will include the addition of moxidictin via moxidectin technical material (MTM) or concentrate (MTC) and the amount of BHT added will be in addition to the BHT originally present in the MTM or MTC. In a further preferred form the method will also include the addition of citric acid.
Where compositions according to the invention are to be used or be prepared for use, in human or veterinary medicine, or in agriculture, horticulture or forestry, they may also contain one or more suitable carriers or excipients as will be known in the art. The compositions are preferably oral drench compositions but could also be formulated as injectables or feed additives as will be known in the art.


The present invention discloses a rotary wheel airtightness detecting machine which comprises a body frame, an air cylinder, an upper seal, a lower seal, a water tank, an electric motor and a self-made air cylinder, etc. During use, the present invention can make the wheel be automatically centered between the upper seal and the lower seal, avoiding severe abrasion of equipment caused by inclination of the upper pressing plate for sealing upon biased positioning of the wheel.

In the process of manufacturing aluminum alloy wheels, the procedure of detecting airtightness is indispensable, which is directly related to driving safety. Therefore, manufacturers attach great importance to airtightness detecting procedure. Traditional methods for detecting airtightness include both airtightness detecting by water and airtightness detecting by helium gas. However, manufacturers presently use water airtightness machines without any wheel centering device, with the position of wheels being roughly determined only by human eyes. When the conical upper seal presses downward, it has to be inclined to seal the front rim of the wheel tightly, which is extremely apt to wear the equipment. In addition, the traditional water airtightness machines possess no function of rotating the wheel upon detection, making it impossible to conveniently and visually judge whether there is leak at any circumferential position of the wheel.

Rotary wheel airtightness detecting machine


A system for monitoring and configuring gaming devices interconnected over a high-speed network. Each gaming device includes a data communication node which allows the gaming device to communicate with a floor controller over a current loop network. The data communication network communicates with both the floor controller and the gaming device. In a multiple jackpot time bonus, the system activates a storm simulator which provides simulated lightning and thunder that vary in intensity with the value of a jackpot multiplier during a bonus period. The bonus jackpots are paid to players at the gaming device.

This invention relates generally to gaming devices, and more particularly to a method and apparatus for implementing a multiple jackpot bonus on a network of gaming devices.
Networked gaming devices are known in the art. Interconnecting a plurality of gaming devices such as slot machines via a computer network to a central computer provides many advantages. Some advantages of a network for operating networked gaming devices, like that disclosed in U.S. application Ser. No. 08/322,172, filed Oct. 12, 1994, assigned to the assignee of the present application, include the ability to extract accounting data from the individual gaming devices, to track players and to operate bonus promotions and progressive jackpots.
The full power of networked gaming devices has not been completely realized. Although the audit data indicates which devices are being under utilized and when, there is currently no automated method for altering under utilized gaming devices' configurations to make them more attractive to play. For example, during certain hours of the day, e.g. four to six a.m., the audit data may indicate that the machines are being under utilized. Thus, it would be desirable to reconfigure the under utilized gaming devices to provide an additional incentive to players to use these devices. In the past casinos have run "bonuses" during these times. An example of such bonuses include a "double jackpot" wherein a player hitting a jackpot is paid double the jackpot amount. Currently this is implemented by having an attendant manually payout the additional payout amount. This manual technique, however, is cumbersome and inefficient to administer because an attendant must be constantly supervising the bonusing gaming devices. Accordingly, a need remains for an automated method and apparatus to provide bonusing for gaming devices.
Another limitation of the current bonusing systems is that only predetermined machines are eligible for the bonusing. For example, in a progressive bonusing machine a plurality of machines are connected together to form a bank. Only the machines in the bank are then eligible to win the progressive jackpot. Thus, a casino must dedicate a certain number of its machines to these banks. This limits the casino's flexibility in tailoring its bonusing to the number and make-up of its customers. Accordingly, a need remains for a more flexible bonusing system whereby any of the casino's machines can participate in the bonusing.
When the gaming machines are operated in a bonus mode, there should be a way to notify the players first, that the bonus mode is imminent to encourage additional play when the bonus mode becomes effective. Secondly, the players must be notified when the bonus mode is in effect. Finally, the players should be notified of the relative value of the bonus, e.g., one type of notification if the machines are in a bonus mode in which the jackpot is to be increased by a factor of 2 and another type in the event the machines are in a different bonus mode in which the jackpots are increased by a higher multiple. Because casinos are always eager to provide customers with new gaming experiences, it would be desirable to provide such notification with audio and visual effects which entertained and stimulated the players and which progressively increased in intensity in proportion to the value of the bonus.
The present invention relates to a new type of bonus promotion for gaming devices, such as slot machines, which is implemented on a network of gaming devices.

Method and apparatus for implementing a jackpot bonus on a network of gaming devices


A polishing head including, below a polishing head body, a rubber film held by a disk-shaped mid plate and an annular guide ring disposed around the rubber film holding the back surface of the workpiece on a lower face portion of the rubber film. The polishing head also includes a base member that is coupled to a polishing head body through an elastic film and holds the guide ring and the mid plate such that the lower surface of the guide ring does not contact the polishing pad during polishing. The polishing head and polishing apparatus, are operable in both of the rough polishing process and final polishing process, that can stably achieve predetermined high flatness and high polishing stock removal uniformity in polishing of a workpiece and can obtain a workpiece with fewer fine particles having a diameter of 45 nm or more.

As an apparatus for polishing a surface of a workpiece such as a silicon wafer, there are a single-side polishing apparatus, in which the workpiece is polished by each side, and a double-side polishing apparatus, in which the both surfaces of the workpiece are polished at the same time.
As shown in FIG. 9, for example, a common single-side polishing apparatus comprises a turn table 93 onto which a polishing pad 94 is attached, a polishing agent supply mechanism 96, a polishing head 92 and so on. This polishing apparatus 91 polishes a workpiece W by holding the workpiece W with the polishing head 92, supplying a polishing agent 95 onto the polishing pad 94 through the polishing agent supply mechanism 96, rotating both the turn table 93 and the polishing head 92, and bringing the front surface of the workpiece W into sliding contact with the polishing pad 94.
With high integration of electronic devices in recent years, optical lithography processes are performed on silicon wafer substrates with smaller features, and minimum line widths are less than or equal to 45 nm. The shrinking of feature sizes is being advanced. There is therefore an increasing need for highly flattened silicon wafers.
The flatness of a workpiece such as a silicon wafer is finally determined in a single-side polishing process. In this process, as a method for holding the workpiece to improve the flatness, there is a method of attaching the workpiece onto a flat disk-shaped plate having high rigidity through an adhesive such as a wax. Particularly when uniform polishing stock removal is needed for the entire surface of the workpiece, a so-called rubber-chuck method is used in which a rubber film is used as a workpiece-holding portion instead of the disk-shaped plate having high rigidity, a pressurized fluid such as air is poured into the back face of the rubber film, and the rubber film is inflated by a uniform pressure so as to press the workpiece toward the polishing pad (See Patent Document 1, for example).
An example of the structure of a conventional polishing head by the rubber-chuck method is schematically shown in FIG. 5. An essential structure of the polishing head 101 includes an annular rigid ring 103, a rubber film 102 adhered to the rigid ring 103, and a mid plate 104 joined to the rigid ring 103. A sealed space 106 is defined by the rigid ring 103, the rubber film 102, and the mid plate 104. An annular template 105 is provided concentrically with the rigid ring 103 in a peripheral portion on a lower face portion of the rubber film 102. The pressure of the space is adjusted, for example, by supplying a pressurized fluid with a pressure adjustment mechanism 107 in the center of the mid plate 104. A pressing means, not shown, for pressing the mid plate 104 in the direction of the polishing pad 132 is provided.
With the polishing head 101 configured as above, the workpiece W is held on the lower face portion of the rubber film 102 through a backing pad 108, an edge portion of the workpiece W is held with the template 105, and the workpiece W and the template 105 are both brought into sliding contact with the polishing pad 132 attached onto the upper face of the turn table 133 by pressing the mid plate 104, thereby performing a rough polishing process.
Fine particles having a diameter of at least 45 nm or more present on the surface of silicon wafers may cause deterioration of product yields of electronic devices. A final polishing process, which is a single-side polishing process in a final stage, is closely associated with particle quality. In order to reduce particles on the surface of a workpiece such as a silicon wafer in the final polishing process, a workpiece holding plate is coupled to a polishing head body through a diaphragm while avoiding any contact of a polishing pad for final polishing except with the workpiece and a load is applied to the workpiece holding plate by using a fluid and the like, thereby performing the final polishing process (See Patent Document 2, for example).
An example of the structure of a conventional polishing head in use for final polishing is schematically shown in FIG. 6(A). In an essential structure of the polishing head 121 as shown in FIG. 6(A), a holding plate 124 having a rigid body such as ceramics is coupled to a head body 123 through a diaphragm 129 made of rubber. A large number of through-holes 130 for vacuum chuck of the workpiece W are formed in the holding plate 124. A backing pad 128 is adhered to the side on which the workpiece W is attached by chuck, and a back plate 122 is provided at a back face side. A ring 125 is also provided so as to surround the holding plate. Adjusting pressure of a space between the holding plate 124 and the back plate 122 through a passage 127 for controlling workpiece chuck enables the vacuum chuck attachment and detachment of the workpiece W. Adjusting pressure of a space between the back plate 122 and the head body 123 through a passage 126 for pressing a workpiece enables adjustment of pressing force of the workpiece W against the polishing pad 132 attached onto the turn table 133.
FIG. 6(B) shows an enlarged view around the ring 125 shown in FIG. 6(A). As shown in FIG. 6(B), polishing can be performed such that the ring 125 does not press the polishing pad 132. When the thickness of a wafer W is 0.775 mm, for example, the ring 125 and the holding plate 124 are placed so that the surface (the surface to be polished) of the wafer W protrudes from the lower face of the ring 125 by 0.20 to 0.35 mm. This prevents the wafer W from being detached during polishing and enables polishing without pressing the polishing pad 132 by the ring 125, thereby preventing generation of particles from the ring 125.
There is however a problem in that surface irregularities of the holding plate 124 having a rigid body such as ceramics is transferred to the workpiece and the flatness thereby deteriorates.
To obtain highly flat workpieces with fewer particles, the polishing head by the so-called rubber-chuck method is commonly used in the rough polishing process, in which the rubber film is used as the workpiece-holding portion, a pressurized fluid such as air is poured into the back face of the rubber film, and the rubber film is inflated by a uniform pressure so as to press both the workpiece and the template holding the edge portion of the workpiece toward the polishing pad. In the final polishing process, the polishing head for final polishing is used in which a load is applied by using a fluid and the like to the workpiece holding plate coupled to the polishing head body through the diaphragm while avoiding any contact of the polishing pad for final polishing except with the workpiece.
As described above, two kinds of polishing heads are conventionally needed, and a larger polishing machine including both of the above polishing apparatus 141 having the polishing head 101 for rough polishing and polishing apparatus 151 having the polishing head 121 for final polishing is therefore needed, for example as shown in FIG. 7. As a result, there is a need to provide a larger space in a clean room, which has high utility cost, the cost of the polishing machine itself becomes higher, and thus there arises a high cost problem.
There is also disclosed a rubber-chuck polishing head that is seems to reduce particles by avoiding any contact of the polishing pad except with the workpiece during polishing and polish the workpiece with high flatness (See Patent Document 3).