A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately being stacked a falling layer of a Group III-V compound semiconductor including In, Ga, As, N and a rising layer of a Group III-V compound semiconductor including Ga, As, Sb. The film thickness of the falling layer and the rising layer is each 3 nm-10 nm. The entire thickness of the superlattice light-receiving layer is 2 μm-7 μm. The lattice mismatch of the constituent film of the superlattice light-receiving layer to InP is ±0.2% or less.

A variety of applications of such mid-infrared light are expected in the fields of gas analysis, medical care, environmental measurement, and the like. However, they have not been realized since there exist no semiconductor light-emitting devices emitting infrared light in this range. In the present situation, not only light-emitting devices but also any appropriate light-receiving devices do not exist. A photodiode for optical communication has an InP (indium phosphide) substrate and an InGaAs (indium gallium arsenide) light-receiving layer and is sensible to 1.3 μm-1.6 μm near infrared light.
However, there is no appropriate material having an absorption edge of 1.6 μm or longer, so that it is impossible to fabricate a device receiving infrared light of 1.6 μm or longer. FIG. 4 schematically depicts a band structure formed in a semiconductor bulk crystal and shows a valence band and a conduction band of a light-receiving layer. The valence band and the conduction band extend uniformly. A forbidden layer lies therebetween. The energy width of the forbidden band, that is, the difference of energy (energy level) between the valence band and the conduction band is band gap Eg. The light-receiving layer absorbs light thereby exciting an electron in the valence band to the conduction band. If a pn junction is fabricated with an absorptive material, the excited electrons, holes are separated to form photocurrent, which is taken out to the outside. A photodiode which senses incidence of light is thus structured.
However, only light having energy of band gap Eg or greater is absorbed by semiconductor. Energy of light is given by hv=hc/λ. Here, h is Planck's constant, c is the speed of light in vacuum, λ is wavelength, and v is frequency. When energy of light E=hc/λ is expressed by eV and wavelength λ, is expressed by μm, the relation of λ=1.2398/E holds. The band gap energy of the substrate InP is 1.3 eV, and thus the cutoff wavelength is 0.95 μm. The InP substrate absorbs light with the shorter wavelength. Since light with the longer wavelength is allowed to pass through, the substrate can be used for a device measuring light of 0.95 μm or longer. A thin film of Group III-V matched to the InP substrate can be formed thereon thereby to fabricate a light-receiving device.
However, the lattice-matching to the substrate is required as a condition. Ternary InGaAs is often used as a light-receiving layer. Under the condition of matching to InP, a composition of In0.53Ga0.47As is used. This has an absorption edge wavelength of about 1.6 μm. Therefore, it is suited for a photodiode receiving light for optical communication, such as 1.3 μm or 1.55 μm.
However, there is no appropriate photodiode capable of receiving light of the longer wavelength, 2 μm-3 μm. In order to receive 2.5 μm, the band gap energy has to be approximately Eg=0.5 eV, However, there are few appropriate semiconductors having such a narrow band gap, and if any, it is impossible to fabricate a pn junction to form a photodiode.
Japanese Patent Laying-Open No. 09-219563 (Patent Document 1) proposes Group III-V semiconductor including Sb (antimony) as a laser material adapted to mid-infrared light, but it states that Group III-V crystal including Sb is difficult to form and is too unstable to fabricate a practical device. Japanese Patent Laying-Open No. 09-219563, which denies Sb-based Group III-V, insists that Group III-V compound semiconductor including nitrogen, such as GaInNAs (gallium indium nitride arsenide) or InNPAs (indium nitride phosphide arsenide), matched to a GaAs substrate or an InP substrate may be a crystal having a band gap energy of 0.73 eV or less and it is possible to form a light-emitting device emitting mid-infrared light of 1.7 μm-5 μm and a light-receiving device receiving with such a wavelength range. Energy of 0.73 eV corresponds to a wavelength of 1.7 μm. Japanese Patent Laying-Open No. 09-219563 insists that since the electronegativity of nitrogen is extremely high, as the lattice constant decreases, the band gap also decreases, as long as the nitrogen proportion is small.
On the other hand, GaInAs (gallium indium arsenide) which has been used in optical communication is characterized in that as the lattice constant increases, the band gap decreases. Thus, GaInNAs which is made of GaInAs with the addition of nitrogen can have a bandgap decreased with the lattice constant matched to the InP or GaAs (gallium arsenide) substrate, so that it is possible to fabricate a mixed crystal having a band gap energy of 0.73 eV or less.
Japanese Patent Laying-Open No. 09-219563 describes a structure of a semiconductor laser with emphasis on a light-emitting device. A description of a photodiode is only made in Example 1. The photodiode structure in Example 1 in Japanese Patent Laying-Open No. 09-219563 is illustrated as follows, from the top in order.
p-GaInAs cap layer (0.2 μm thick)
p-InP layer (1.0 μm thick)
non-doped GaInNAs strain-free light absorption layer (0.5 μm thick)
n-InP layer (1.0 μm thick)
n-InP substrate
Japanese Patent Laying-Open No. 09-219563, however, does not mention the mixed crystal ratio of the GaInNAs strain-free light absorption layer. The value of the band gap of the GaInNAs strain-free light absorption layer is unknown. Moreover, no mention is made of whether it can receive light of 1.7 μm or not. The request for examination was not made for Japanese Patent Laying-Open No. 09-219563 and the application is deemed to be withdrawn. In order to lower the band gap energy to 0.6 eV (corresponding to wavelength 2 μm), the proportion of nitrogen N has to be made considerably large (about 10%). However, it is impossible to grow a GaInNAs thin film having such a high nitrogen proportion on the InP substrate. Group V element has an extremely high vapor pressure at a growth temperature, which makes vapor deposition difficult. In addition, in this case, two different Group V elements exist. The vapor pressures are considerably different, and successful growth is impossible even with MBE (Molecular Beam Epitaxy).
Japanese Patent Laying-Open No. 2003-282927 (Patent Document 2) proposes a photodiode in which an In0.53Ga0.47As layer having a lattice constant smaller than that of InP and an In0.55Ga0.45As layer having a lattice constant larger than that of InP are grown in an overlapping manner as light-receiving layers on an InP substrate, and an InP cap layer is grown thereon. Two layers each having a lattice constant greater or smaller than that of InP are combined so that the average lattice constant agrees with the lattice constant of InP. The absorption wavelength of the former In0.53Ga0.47As is λg=1.57 μm, and the absorption edge wavelength of the latter In0.55Ga0.45As is 4=1.63 μm. Therefore, infrared light of up to 1.63 μm can be received. As the conventional photodiode for optical communication has an In0.53Ga0.47As light-receiving layer with the absorption wavelength of λg=1.57 μm, light can be sensed to the infrared side by 0.06 μm as compared with the conventional one.
However, a semiconductor lattice-matched to InP or GaAs and having a narrow band gap hardly exists. Then, two types of structure having a superlattice as a light-receiving layer have been proposed. It is known that there are two different kinds of junctions of a mixed crystal semiconductor thin film layer matched to an InP substrate. The normal one is called type 1 and a newly discovered junction is called type 2. The difference in manner of these two kinds of junctions will be described.
FIG. 5 shows a band of a superlattice structure of type 1. When a heterojunction is formed between a material A having a narrow bandgap EgA and a material B having a wide band gap EgB, conduction band CB of B lies above conduction band CA of A, and valence band VB of B lies below valence band VA of A. This is referred to as a type 1 heterojunction.
Although band gap EgA of material A and band gap EgB of material B are determined, the amounts of the conduction band difference (CA−CB) and the valence band difference (VA−VB) in the junction are not easily known. This may be a difference of work function φ, which is not known in advance. It is not determined until a sample is prepared. The heights of the conduction band and the valence band of material A are given by CA, VA, respectively. The heights of the conduction band and the valence band of material B are given by CB, VB, respectively.CA−VA=EgA  (1)CB−VB=EgB  (2)where EgA, EgB are constants. If CA−CB or VA−VB is known, all of CA, VA, CB, VB are determined. However, neither CA−CB nor VA−VB is easily known, and the manner of the band created with the heterojunction of material A and material B is not known in advance. This is because CA−CB is not determined until the heterojunction is fabricated. However, even if CA−CB is determined, the means for finding the values of CA, VA, CR, VB is limited. There is no means for directly detecting how the junction is formed.
In a type 1 heterojunction, when EgA<EgB, CA−CB<0 and VA−VB>0. In general, (CA−CB)(VA−VB)<0 can be defined. The difference of conduction band heights and the difference of valence band heights are opposite. In the normal heterojunction, when a valence band goes down, a conduction band goes up, and such a relation is the most common.
In a superlattice structure having materials A, B repeatedly laid in layers as well as in a single heterojunction, the relation of bands is the same. The single junction of type 1 is as shown in FIG. 5. An example of EgA<EgB is shown. CB>CA, VA>VB. The conduction band difference WAB=CA−CB is negative. The valence band difference UAB=VA−VB is positive. In type 1, such a simple expression as WABUAB<0 can be made. A number of type 1 junctions are alternately laid as shown in FIG. 9.
Absorption of light with a long wavelength in material A causes transition as shown by p, creating an electron-hole pair in material A. Absorption of light with a short wavelength in material B causes transition as shown by q, creating an electron-hole pair in material B. This depends on a wavelength (energy) of light to be absorbed. Transition which goes across the junction as shown by r occurs with a low probability. When monochrome light with low energy is applied, only transition of p occurs. Given that hc/λ is photon energy, light with a wavelength λ, longer than hc/EgA is not absorbed. A photodiode having a superlattice including this multi junction as a light-receiving layer cannot detect light with energy smaller than narrow band gap EgA.
For example, when a superlattice of InGaAs/InP is fabricated, a type 1 junction is fabricated in which InP corresponds to material B having a wide band gap and InGaAs corresponds to material A having a narrow band gap. Type 1 is the normal junction. The junction of most semiconductors is type 1. For detection of infrared light having a long wavelength, there is no other choice but to use a semiconductor material having a narrow band gap. However, a semiconductor having such a narrow band gap hardly exists.
However, the junction as shown in FIG. 6 may be contemplated. In the heterojunction between material D and material G, conduction band bottom energy CD, CG and valence band peak energy VD, VG change similarly. In other words, in this junction, WGD=CD−CG>0, UGD=VD−VG>0 or vice versa. In general, (CD−CG)(VD−VG)>0.
In Non-Patent Document 4 (Klem et al.), a superlattice thin film structure having a heterojunction of GaAs0.5Sb0.5/In0.53Ga0.47As was formed on an InP substrate by MBE, and with various combinations of film thicknesses of the superlattice, photoluminescence (PL) of the GaAsSb/InGaAs superlattice structure at 77 K was examined. The angle dependency of (004) X-ray diffraction intensity was also measured. The appropriate mixed crystal ratio is determined by the condition of lattice match since the structure was formed on an InP substrate.
The mixed crystal ratio of InGaAs is In=0.53, Ga=0.47, as repeatedly described so far, which is most commonly used as a light-receiving layer on the InP substrate. This light-receiving layer is that of the photodiode for optical communication with 1.2 μm-1.6 μm, which has already been used widely. The band gap energy is Eg=789 meV and the absorption edge wavelength is 1.57 μm. Photoluminescence corresponding to band-to-band transition 1.57 μm appears.
The other GaAsSb is a material difficult to prepare. The growth speed of GaAsSb is slow. The mixed crystal ratio of GaAsSb is unstable. When GaAsSb is manufactured, the mixed crystal ratio varies widely depending on the composition or temperature of the material gas.
The band gap WGD, UGD in the GaAsSb/InGaAs junction is also unknown. With three kinds of combinations of superlattice film thicknesses of 16.5 nm/16.5 nm, 8.5 nm/8.5 nm, 5.5 nm/5.5 nm, photoluminescence at 10 K was measured. The result was that photoluminescence had a peak of 0.45 eV, 0.48 eV, 0.53 eV, respectively, and the photoluminescence intensity was greater in the combination of a thinner superlattice film thickness.
If this is a type 2 junction and photoluminescence is generated by transition between the conduction band of InGaAs and the valence band of GaAsSb, given that the energy difference between the bottom of the InGaAs conduction band and the peak of the GaAsSb valence band is Q, energy Eph of the photoluminescence should be:Eph=Q+(h2/8)(1/t2me+1/s2mh)where h is Planck's constant, s, t are the thicknesses of one rising layer, one falling layer, respectively, and me, mh are the effective mass of electron hole. With Q and s, t varied, possible values of Eph can be calculated. With s=t=16.5 nm, 8.5 nm, 5.5 nm, the respective three kinds of superlattices were formed, and the measured photoluminescence was Eph=0.45, 0.49, 0.54 eV, respectively. Based on the measurement results, Non-Patent Document 4 estimated that the intersection band gap energy Q=0.43 eV. Non-Patent Document 4 estimated that the band gap energy of GaAsSb (As:Sb=50:50) was EgD=800 meV and the band gap energy of InGaAs was EgG=810 meV.
As shown in FIG. 6, since EgG=Q+UGD, EgD=WGD+Q, it can be calculated that UGD=380 meV, WGD=370 meV. The offset WGD of the conduction band is finally calculated here. WGD is the most important parameter of the type 2 junction. When this is determined, the intersection band gap is also found, for the band gap is known. Non-Patent Document 4 insists that Q=430 meV.
Non-Patent Document 4 assumed the intersection band gap energy CD−CG=0.37 eV. The rising layer is D=GaAsSb, and the falling layer is G=InGaAs. Although the mixed crystal ratio of GaAsSb varies depending on the material gas Group V/Group III ratio, when 5.5, it is calculated that the absorption edge is 1.55 μm and the band gap energy EgD=0.800 eV. On the hand, InGaAs is a well-known mixed crystal with In of 53% and Ga of 47%. The absorption edge wavelength is 1.57 μm and the band gap energy is EgG=0.789 eV. On the assumption of CD−CG=0.37 eV, the gap of the valence band should be VD−VG=0.359 eV. FIG. 7 is a band junction diagram based on such an assumption. Non-Patent Document 4 estimates such a band diagram based on the measurement of photoluminescence.
However, different values of intersection band gap Q have been reported until then. Non-Patent Document 5 mentions the intersection band gap energy Q=230 meV. Non-Patent Document 6 says the intersection band gap energy Q=250 meV.
The value of Q varies depending on the target to be measured and the assumption. A number of assumptions have existed for the value of the intersection band gap Q.
This illustrates the unstableness of GaAsSb and the difficulty of evaluation. Even if the band gap EgG, EgD unique to a material cannot be made small, if the intersection band gap is small, this intersection transition leads to a possibility of fabricating a photodiode capable of receiving infrared light with a long wavelength.
The type 2 junction is complicated and the terms are thus defined provisionally here. In the type 2 junction, the layer in which both a conduction band and a valence band become high is called a rising layer D. A layer in which both a conduction band and a valence band become low is called a falling layer G. WGD is referred to as a conduction band offset. UGD is referred to as a valence band offset. The relation EgG=Q+UGD, EgD=WGD+Q holds between the band gap EgG of the falling layer, the band gap EgD of the rising layer and the conduction band offset, the valence band offset. Q is the degree of energy of mid-infrared light (2-3 μm).
Photoluminescence corresponding to Q is generated. It is assumed that this is due to electron transition between the conduction band of the falling layer and the valence band of the rising layer. The generated photoluminescence may be used to form a light-emitting device for mid-infrared. An attempt has been made to fabricate a light-emitting device for mid-infrared using the GaAsSb/InGaAs junction. By contrast, the generation of photoluminescence leads to the expectation that a light-receiving device absorbing mid-infrared light to generate photocurrent may be formed. In other words, a photodiode for mid-infrared light may possibly be fabricated using the type 2 junction.
In Non-Patent Document 3 (Yamamoto et al.), In0.53Ga0.47As/GaAs0.5Sb0.5 single junction (SH; single-hetero: not MQW) was grown on an InP substrate by MBE with the temperature varied (505° C., 515° C., 530° C.) and with the Group VIII ratio varied (the Group VIII ratio=5.5, 12, 18), and with application of Ar (argon) laser (514 nm), the growth temperature dependency of photoluminescence was examined. Here, photoluminescence is approximately from 1.5 μm to 1.63 μm and is not the photoluminescence (2.3 μm) resulting from the intersection band gap.
In addition to photoluminescence corresponding to the band-edge wavelength of 1.57 μm, photoluminescence having a peak at the lower energy 1.61 μm appeared in the GaAsSb layer grown with the material gas Group V/III ratio of 5.5. When the growth temperature is increased from 505° C. to 530° C., the peak of 1.61 μm decreases. It was mentioned that emission of 1.61 μm could not be detected in a sample with the growth temperature of 530° C. This does not correspond to either the band gap of InGaAs or the band gap of GaAsSb. This may be emission resulting from impurity interlevel transition. In Non-Patent Document 3, the conduction band energy difference is assumed to be WGD=370 meV, and assuming a potential in InGaAs (falling layer G), a Schrödinger equation is formulated and solved self-consistently.
The first orbital energy of the conduction band of the falling layer In0.53Ga0.47As is E1=124 meV, the second orbital energy is E2=150 meV, and Fermi energy is Ef=176 meV. This is shown in FIG. 8. Although the first orbital and second orbital energy of the valence band of the rising layer is not calculated, it is believed that E1=50 meV, approximately.
Since the energy difference between the bottom of the conduction band of the falling layer and the peak of the valence band of the rising layer is Q=370 meV, the energy released to the peak of the rising layer (GaAsSb) by an electron dropping from the first orbit of the conduction band of the falling layer to the first orbit of the valence band of the rising layer is 544 meV. This corresponds to a wavelength 2.46 μm. It is assumed that this is the source of photoluminescence of 2.4 μm-2.5 μm. In other words, Q=WGD=370 meV was confirmed, according to Non-Patent Document 3.
Non-Patent Document 2 (Rubin et al.) proposes a photodiode in which an In0.53Ga0.47As buffer layer is formed on an InP substrate, a quantum well (total thickness of 1500 nm) of 150 pairs of InGaAs/GaAsSb of 5 nm/5 nm is grown thereon, and in addition, In0.53Ga0.47As window layer is provided. It says that light of 2.23 μm was received at room temperature. This is the first photodiode using the type 2 junction.    Patent Document 1: Japanese Patent Laying-Open No. 09-219563    Patent Document 2: Japanese Patent Laying-Open No. 2003-282927    Non-Patent Document 1: T. Murakami et al., "InxGa1-xAs/InAsyP1-y detector for near infrared (1-2.6 μm)," Conference Proceedings of Indium Phosphide and Related Materials    Non-Patent Document 2: Rubin Sidhu, Ning Duan, Joe C. Cambell & Archie L. Holmes, "A Long-Wavelength Photodiode on InP Using Lattice-Matched GaInAs—GaAsSb Type-II Quantum Wells," IEEE Photonics Technology Letters, Vol. 17, No. 12, pp 2715-2717, December 2005    Non-Patent Document 3: A. Yamamoto, Y. Kawamura, H. Naito & N. Inoue, "Optical properties of GaAs0.5Sb0.5 and In0.53Ga0.47As/GaAs0.5Sb0.5 type II single hetero-structures lattice-matched to InP substrates grown by molecular beam epitaxy," Journal of Crystal Growth, Vol. 201/202, pp 872-876, May 1999    Non-Patent Document 4: J. F. Klem, S. R. Kurtz and A. Datye, "Growth and properties of GaAsSb/InGaAs superlattices on InP," Journal of Crystal Growth vol. 111, pp 628-632, 1991    Non-Patent Document 5: G. A. Sai-Halasz et al., Solid State Commun. 27, p 935, 1978    Non-Patent Document 6: Y. Sugiyama et al., Journal of Crystal Growth vol. 95, p 363, 1989

Osaka Prefecture University Public Corporation


A gliding board, such as a snowboard, has improved lift or float in certain conditions, e.g., when gliding in powdered snow. A nose and/or tail of the gliding board may have a variable bending property to provide the improved float. In one embodiment, the nose and/or tail may have a tapered thickness or other features so that the nose and/or tail is more flexible toward the tip of the nose or tail. Other variable bending properties in the nose and/or tail may be provided for reasons other than improved float, such as to enhance trick or other maneuver performance.

Specially configured boards for gliding along a surface are known, such as snowboards, snow skis, water skis, wake boards, surfboards and the like. For purposes herein, "gliding board" refers generally to any of the foregoing boards as well as to other devices which allow a rider to traverse a surface. For ease of understanding, however, and without limiting the scope of the invention, aspects of the invention are discussed below particularly in connection with a snowboard.
A typical snowboard includes a running length extending between opposite nose and tail ends. The nose and tail ends may have a "shovel" shape where the board end curves upwardly generally avoiding contact with the snow when riding on smooth terrain. The location at which the ends curve upward and away from the running length of the board is commonly called a transition or contact area.
The nose and/or tail provide an important function when riding over curved or bumpy surfaces, and when riding in deep snow. When riding on curved or bumpy surfaces, the nose and/or tail can prevent the leading end from digging into the curve or bump, and instead allow the board to glide up a curve or over a bump. When riding in deep snow, the leading end of the snowboard (usually the nose) is upturned and contacts the snow so that the board does not dive under the snow surface. That is, the upturned nose forces snow under the board and keeps the board from sinking excessively into the snow. This ability of the board to force a proper amount of snow under the board and keep the rider at a suitable position relative to the surface of deep snow is commonly called "float." To improve float in deep snow, some cap-type construction boards have been provided with a core that has a tapered thickness at the nose. This tapered thickness of the core results in a cap-type board having a nose that increases in flexibility from the transition or contact area toward the tip of the nose. This increased flexibility allows the nose to flex upward to a varying degree along the nose when contacted by snow, thereby increasing the frontal area on the nose and the amount of lift provided to the board.
A cap-type snowboard is typically constructed from several components including a core, e.g., made of wood, top and bottom reinforcing layers that sandwich the core, a top cosmetic layer and a bottom gliding surface, or base. The top reinforcing layer typically overlaps the side edges of the core to protect the core from the environment and provide structural support to the board. Since the core in a cap-type board typically extends into the nose and tail ends of the snowboard, tapering the core at the nose end results in a board having a tapered nose and improved float.
Another construction type of snowboard is the sidewall-type board. Similar to a cap board, sidewall boards typically have a core, top and bottom reinforcing layers, a top cosmetic layer and a bottom gliding surface. However, in contrast to cap boards, the top reinforcing layer does not cover the side edges of the core. Instead, a sidewall support member is positioned between the top and bottom reinforcing layers (and/or a metal edge at the bottom of the board). The sidewall is bonded to the top and bottom layers to protect the interior of the board, including the core, from the environment. The core in sidewall boards does not normally extend into the nose and tail ends of the board. Instead, the core terminates near the transitions at the nose and tail, and a spacer made from a flat sheet material is positioned between the top and bottom reinforcing layers in the nose and tail. The spacer typically has a constant thickness and forms a significant portion of the thickness of the nose and tail ends. Thus, prior sidewall-type boards have not been provided with a tapered nose or other features to improve the float of the board.

Gliding board with varying bending properties


An implantable medical device controls an anti-tachyarrhythmia therapy by detecting a tachyarrhythmia episode from a cardiac signal and analyzing the detected tachyarrhythmia episode in a tachyarrhythmia detection and analysis process to determine whether the anti-tachyarrhythmia therapy needs to be delivered. The tachyarrhythmia detection and classification process includes detection of inhibitory events each indicating that the tachyarrhythmia episode is of a type not to be treated by the anti-tachyarrhythmia therapy or that the tachyarrhythmia episode is not sustaining. The detection of each of the inhibitory events causes the tachyarrhythmia detection and classification process to be restarted or extended, or the delivery of the anti-tachyarrhythmia therapy to be withheld.

Tachyarrhythmias are abnormal heart rhythms characterized by a rapid heart rate. Tachyarrhythmias generally include supraventricular tachyarrhythmia (SVT, including atrial tachyarrhythmia, AT) and ventricular tachyarrhythmia (VT). Fibrillation is a form of tachyarrhythmia further characterized by an irregular heart rhythm. In a normal heart, the sinoatrial node, the heart's predominant natural pacemaker, generates electrical impulses, called action potentials, that propagate through an electrical conduction system to the atria and then to the ventricles of the heart to excite the myocardial tissues. The atria and ventricles contract in the normal atrio-ventricular sequence and synchrony to result in efficient blood-pumping functions indicated by a normal hemodynamic performance. VT occurs when the electrical impulses propagate along a pathologically formed self-sustaining conductive loop within the ventricles or when a natural pacemaker in a ventricle usurps control of the heart rate from the sinoatrial node. When the atria and the ventricles become dissociated during VT, the ventricles may contract before they are properly filled with blood, resulting in diminished blood flow throughout the body. This condition becomes life-threatening when the brain is deprived of sufficient oxygen supply. Ventricular fibrillation (VF), in particular, stops blood flow within seconds and, if not timely and effectively treated, causes immediate death. In very few instances a heart recovers from VF without treatment.
Cardioversion and defibrillation are used to terminate most tachyarrhythmias, including AT, VT, and VF. An implantable cardioverter/defibrillator (ICD) is a cardiac rhythm management (CRM) device that delivers a cardioversion/defibrillation pulse (also known as a shock) to terminate a detected tachyarrhythmia episode by depolarizing the entire myocardium simultaneously and rendering it refractory.
Because the cardioversion/defibrillation pulse causes pain in the patient and drains a substantial amount of energy from the ICD's battery, its delivery is justified when it is necessary, such as when a life-threatening VT or VF is occurring. An unnecessary delivery of the cardioversion/defibrillation pulse causes pain and shortens the longevity of the ICD without benefiting the patient. A detection of tachyarrhythmia based on heart rate is not sufficient for determining the need and adequacy of delivering the cardioversion/defibrillation pulse. For example, a transient, non-sustaining VT may terminate itself without device intervention.
For these and other reasons, there is a need for determining whether to deliver the cardioversion/defibrillation pulse based on the nature of a detected tachyarrhythmia episode.

Method and apparatus for detecting non-sustaining ventricular tachyarrhythmia


A proximity detector for detecting the position of a magnetic target having a transceiver module with a light emitting source, an optical detector, and a 2xc3x972 optical coupler joining the light emitting source and optical detector is provided. A sensor having an outer case houses a collimating lens, a polarizer, a Faraday material, and a mirror. A multi-mode optical fiber connects the transceiver module to the sensor. Preferably, the proximity detector detects the position of the magnetic target, which is substantially axially spaced from the sensor, using a single polarizer aligned with a single Faraday material. Preferably, the Faraday material comprises an iron garnet material, and most preferably a bismuth iron garnet material.

The invention relates to a device for detecting the proximity of a magnetic target, and more specifically to an optical proximity detector which employs the Faraday effect to so detect the proximity of a magnetic target thereto.
When a beam of polarized light passes through an optical material known as a xe2x80x9cFaraday materialxe2x80x9d, which is exposed to a magnetic field, the Faraday effect causes the material to shift the plane of polarization of the light beam by an angle which is proportional to the strength of the magnetic field. Typically, the magnetic target which is placed in the lines of a magnetic field may take the form of a mechanical device such as a rotating shaft or a door. The change in position of the mechanical device relative to the optical sensor can be detected by the Faraday effect associated with the variation of the magnetic field strength as a result of the magnetic target""s change in position within the magnetic field. Various instrument configurations have been developed to exploit the Faraday effect of a selected material in order to detect the position of such a mechanical device, and the detection of a mechanical device""s position with optical transducers which measure variations in the intensity of a magnetic field modulated by a magnetic target is well-known. However, although the prior art is highly developed, a number of deficiencies still exist.
U.S. Pat. No. 4,947,035 to Zook discloses a fiber-optic transducer having a 2xc3x971 bidirectional coupler, a fiber, a graded index, or GRIN, lens which collimates light and supplies it to a polarizer, and a permanent magnet radially spaced from the sensor axis. The transducer measures modulation of a magnetic field caused by the mechanical motion of a target device.
U.S. Pat. Nos. 5,149,962; 5,214,377; 5,334,831 and 5,399,853 to Maurice disclose a proximity detector having a pair of fibers with an input polarizer and a second polarizer acting as an analyzer entering into a second optical fiber.
U.S. Pat. No. 5,192,862 to Rudd discloses a polarizer-less optic sensor having a magneto-optical material which exhibits the Faraday effect to provide a phase grating, wherein the intensity of the input light""s center beam and diffracted orders change with the magnitude of a magnetic field.
All of these prior art references suffer from a number of disadvantages. One such disadvantage of many of the configurations disclosed in the prior art is that they typically require a polarizing beam splitter component which serves to pass a component of the input light to a particular polarization state as it passes through multiple ports. This is typically done to track optical intensity or polarization states in order to provide-increased sensitivity for the detector.
Another disadvantage of the prior art optical proximity detectors is that they often require a reference path to track the optical intensity or polarization states from the input light source. This, in turn, may disadvantageously require a single mode fiber or more than one fiber to connect a transceiver and sensor. Requiring a reference path may also disadvantageously necessitate the use of more than one optical source and detector.
Yet another disadvantage of the prior art optical proximity sensors is that light typically passes through a sensor with an entrance and exit fiber, where light entering the sensor is directed down a different fiber than the one that delivered it. Such a configuration also disadvantageously requires more than one linear polarizer.
Still another disadvantage of prior designs for optical proximity sensors has been that, when used with certain Faraday materials, they require that the sensor have a permanent magnet radially positioned in order to achieve the proper sensitivity, and that the light source and optical fiber be precisely configured and selected to correspond with the sensor. Such a design limits the applications for which the sensor can be used and increases its manufacturing costs, as relative position and alignment of the components become more critical.
What is desired therefore is an optical proximity detector which does not require a polarizing beam splitter component which serves to pass a component of the input light to a particular polarization state as it passes through multiple ports, which does not require a reference path to track the optical intensity or polarization states from the input light source, which is configured such that light entering the sensor is not directed down a different fiber than the one that delivered it, and which does not require that the sensor have a permanent magnet radially positioned in order to achieve the proper sensitivity, and that the light source and optical fiber be precisely configured and selected to correspond with the sensor.
Accordingly, an object of the invention is to provide an optical proximity detector which employs a fiber optic beam splitter having a multimode fiber with a matched optical source.
Another object of the invention is to provide an optical proximity detector which employs a single optic fiber connecting a transceiver and a sensor wherein no reference path is required to track optical intensity or polarization states.
A further object of the invention is to provide an optical proximity detector which is reflective and not transmissive, and wherein substantially all of the light entering a sensor is redirected back down the same optical fiber which delivers it.
Yet another object of invention is to provide optical proximity detector which employs a single optical source and a single optical detector.
Another object of the invention is to provide in optical proximity detector which is arranged such that the proximity of a target directly correlates with the intensity of the light collected at the detector and is not calculated by processing of a reference channel and a probe channel.
Still another object of invention is to provide optical proximity detector which can resolve the position of the target as well as report a binary position status.
Other objects of the invention will be obvious and may in part appear hereinafter.
These and other objects of the present invention are achieved by provision of a proximity detector for detecting the position of a magnetic target having a transceiver module with a light emitting source, an optical detector, and a 2xc3x972 optical coupler joining the light emitting source and optical detector. A sensor having an outer case houses a collimating lens, a polarizer, a Faraday material, and a mirror. A multi-mode optical fiber connects the transceiver module to the sensor. Preferably, the proximity detector detects the position of the magnetic target, which is substantially axially spaced from the sensor, using a single polarizer aligned with a single Faraday material. Most preferably, the Faraday material comprises a Bismuth-Iron-Garnet material.
In another aspect, the proximity detector comprises a transceiver module having a light emitting source aligned with a band pass filter, a first optical detector, a second optical detector, a first 2xc3x971 optical coupler, and a second 2xc3x971 optical coupler. The first 2xc3x971 optical coupler joins the first optical detector and the light emitting source. A sensor having a single polarizer is aligned with a single Faraday material, and a single multi-mode optical fiber connects the transceiver module to the sensor. The second optical detector verifies operation of the sensor with the light emitting source, and the second 2xc3x971 optical coupler joins the second optical detector and the light emitting source with the first 2xc3x971 optical coupler.
The invention and its particular features will become more apparent from the following detailed description considered with reference to the accompanying drawings.


Adjustment system for positioning a cutting insert on a cutting tool has a rotatable first rod with a surface having a plurality of flatted areas arranged radially, each at a different radial distance from an axial center of the first rod relative to a sequentially adjacent flatted area, a translatable second rod with an axially tapered surface, wherein a face of the first end of the second rod contacts one of the plurality of flatted areas, a biasing element positioned to exert a force to bias the face of the first end of the second rod to contact the flatted area, and a translatable push pin, wherein a face of the first end of the push pin contacts the tapered surface and wherein a face of the second end of the push pin operatively contacts a cartridge mounted on the cutting tool and in which the cutting insert is seated.

In the discussion of the background that follows, reference is made to certain structures and/or methods. However, the following references should not be construed as an admission that these structures and/or methods constitute prior art. Applicant expressly reserves the right to demonstrate that such structures and/or methods do not qualify as prior art.
Machining tools such as multiple cartridge and/or insert tools for boring, milling and turning, generally have multiple cartridges each mounted onto the tool body by, for example a mounting screw. The alignment of the inserts is important to obtaining proper machining using these tools, which generally must position multiple inserts of the same tool body at the same time. Therefore, the inserts typically have both an adjustment associated with the seating location on the cartridge as well as an adjustment for the cartridge position itself, both axially and radially. The cartridge position adjustment also adjusts the position of the seated insert.
An example of a conventional fine adjustment of indexable inserts on, for example, a boring tool, uses a ground tapered pin 10, known as a Kam screw or eccentric adjustment, to drive a push pin 20 up and deflect a member of the tool, usually a cartridge 30. The cartridge 30 sits in a cavity 40, with positioning aided by a key 50 or other locating device. A finish boring diameter is set by turning a set screw 60 threaded into the cartridge 30 and contacting the push pin 20 to create preload by deformation of the cartridge 30. The tapered pin 10 is seated in a ground hole 70 by a threaded end 80 and has an adjusting surface 90 under the push pin 20. Insert wear adjustments are made by turning the tapered pin 10 to change the position of the push pin 20 toward or away from the cartridge 30. Fine adjustment is measured by aligning a mark on the tapered pin 10 with graduated marks on the body of the tool. The tapered pin 10 is typically orientated to fall directly beneath the cutting point making precise location of all the features of the mechanism critical and difficult to manufacture.

Final adjustment mechanism with tactile feedback


A connector includes pins having a pinout including a functional designation cadence. The functional designation cadence includes a first ground pin, a first signal pin, a no-connect pin, a second signal pin, and a second ground pin, where the first signal pin is positioned between the first ground pin and the no-connect pin, the no-connect pin is positioned between the first and second signal pins, and the second signal pin is positioned between the no-connect pin and the second ground pin. Alternately, the functional designation cadence includes a first ground pin, a first signal pin, a third ground pin, a second signal pin, and a second ground pin, where the first signal pin is positioned between the first and third ground pins, the third ground pin is positioned between the first and second signal pins, and the second signal pin is positioned between the third and second ground pins.

Optical cables can be implemented in applications in which data is communicated between host systems. For example, a first host system may transmit data to a second host system via the optical cable. Optical connectors may be attached to the ends of the optical cable to provide a mechanical coupling between the ends of the optical cable and the corresponding host systems. The optical connectors generally include a set of pins that interface with complementary pins or receivers in a receiver of the host system.
Dimensions of optical connectors are decreasing in size while at the same time the amount of data communicated through the optical connectors is increasing. In some designs, the reduction in size dictates relative positions of components included in the optical connectors. The relative positions may reduce the ability to reliably transfer data through the optical connectors.
The subject matter claimed herein is not limited to embodiments that solve any disadvantages or that operate only in environments such as those described above. Rather, this background is only provided to illustrate one exemplary technology area where some embodiments described herein may be practiced.


Hoses including an inner tube defining a central longitudinal axis there through, a cover layer disposed proximate the inner tube, and a first reinforcement layer disposed between the inner tube and the cover layer, where a rubber compound forming one or more of the inner tube or the cover layer comprises glass beads, and the rubber compound has a specific gravity of 2.5 or less, a specific gravity of 1.3 or less, or even a specific gravity of 1.1 or less. The rubber compound may include glass beads in an amount of 100 phr or less, 40 phr or less or even 20 phr or less. In some cases, the hoses further include a second reinforcement layer disposed between the first reinforcement layer and the cover layer, and may even further include a friction layer disposed between the first reinforcement layer and the second reinforcement layer.

This section provides background information to facilitate a better understanding of the various aspects of the disclosure. It should be understood that the statements in this section of this document are to be read in this light, and not as admissions of prior art.
Flexible rubber hose is used in a variety of hydraulic, pneumatic and other fluid transfer applications for conveying fluid over a range of pressures from about 50 psi (0.34 MPa) to 8000 psi (55 MPa) or more. In basic construction, hoses of the type herein involved typically are formed as having a tubular, inner tube or core surrounded by one or more outer layers of a braided, knit or spiral-wound reinforcement material which may be a metal or metal-alloy wire, or a natural or synthetic fiber. The reinforcement layers, in turn, are protected by a surrounding outermost jacket or cover which may be of the same or different material as the inner tube. The cover also provides the hose with increased abrasion resistance.
In the case of "rubber," as opposed to thermoplastic, hose constructions, the inner tube, may be provided as formed of a vulcanizable natural or, more typically, a synthetic rubber material such as Buna-N, neoprene, EPDM, FKM, and the like. Such material or blend may be conventionally extruded and cooled or cured to form the inner tube. In some cases, the tube may be cross-head extruded over a mandrel for support, or otherwise supported in later forming operations using air pressure and/or reduced processing temperatures. In some other cases, hoses may be prepared in a so-called wrap process.
The inner tube may be delivered through a braider and/or a spiral winder for its reinforcement with one or more surrounding layers of a wire and/or fibrous material or blend such as a monofilament, yarn, cord, yarn-wire composite, or roving. Such reinforcement layers are often applied under tension and typically may be formed of an interwoven braid or a spiral winding of a polyamide, polyester, polyphenylene bezobisoxazole, rayon, cellulose, polyvinyl acetate, or aramid yarn, or a high tensile steel or other metal wire. A relatively thin bonding or other interlayer of a vulcanizable rubber may be extruded or otherwise applied between each of the reinforcement layers to bond each layer to the next layer.
Following the braiding, winding, or other application of the reinforcement layers and the interlayers, an outer cover or sheath optionally may be applied. Such cover, which may be formed as a cross-head extrusion, a moisture-cured or solvent-based dipped coating, or a spiral-wound wrapping, typically comprises an abrasion-resistant synthetic rubber or a thermoplastic such as a polyurethane. Following the application of the cover, the hose construction so-formed by be heated to vulcanize the rubber layers and thereby consolidate the construction into an integral hose structure.
In normal use, such as in mobile, marine, industrial hydraulic, and pneumatic applications, typical hoses have a lack of buoyancy, are of high mass and thus specific gravity. In some circumstances, reduced specific gravity of the hose while using standard hose constructions and maintaining acceptable performance is desired. This may be the case, for example, where hoses are extended vertically in long lengths, weight savings are desired, or where the hoses need a target buoyancy.
Hence, it is desirable to have hoses, which are manufactured with standard constructions, have acceptable performance, and which exhibit lower specific gravity properties. Such needs are achieved by embodiments according to the disclosure.


Provided is a resin particle comprising a resin (a) and a filler (b) contained in the particle; the particle has a volume average particle diameter of from 0.1 to 300 μm and a shape factor of from 110 to 300; the particle has an outer shell layer (S) comprising at least a portion of the filler (b); the layer (S) is at least 0.01 μm thick and has a thickness that is ½ or less of the maximum inscribed circle radius of the particle cross section. When used as a toner resin, it is excellent in blade cleaning properties and wide in the fixation temperature range; when employed as a paint additive or a cosmetics additive, it is excellent in masking properties; when used as paper coating additive, it is excellent in ink retention; when utilized as an abrasive, it is excellent in abrasion.

Resin particles are conventionally known that are produced by dispersing, in an aqueous medium, a resin solution in which the resin was dissolved in a solvent in advance in the presence of a dispersing (assistant) agent such as a surfactant or water-soluble polymer, and then removing the solvent via heating, pressure reduction, or the like (the solution resin suspension process). The shapes of these resin particles obtained by the solution resin suspension process are difficult to be regulated, and in general they have a spherical form.
Use of the spherical particles as a paint additive or a cosmetics additive leads to insufficient masking properties in some cases. When the particles are used as a paper coating additive, the retention of ink is sometimes poor due to lack of oil absorbance. When the particles are used as an abrasive, the frictional resistance is small, thereby grinding properties are poor in some cases. The use of the particles as a toner resin poses the problem of rendering cleaning properties insufficient when the toner remaining on a photoreceptor without being transferred to a paper surface is cleaned with a blade. For solution of such problems, a process is available that involves appropriately elasticizing the surfaces of particles prior to volume shrinkage of the particles with a solvent-removing, and making smaller the surface area decreasing speed than the volume shrinking speed to form resin particles having unevenness on the surfaces. As a means of rendering the surface of a particle to be elastic is proposed a method of forming a shell material on the resin particle surface by means of interfacial polymerization or in-situ polymerization (refer to Japanese Patent Application Laid-Open No. 4-209630). This method, however, does not sufficiently exhibit properties required for the particles due to the effect of the shell material. For instance, a toner in this case causes the problem of lowering low-temperature fixing properties and anti-hot offset properties, thereby extremely narrowing the fixing temperature range.

Resin particle and process of producing the same


Bay RAM Five is a very high-speed solid-state data storage device with 4 independently controlled banks of 4 DDR3 SO-DIMM sockets per bank, 4 industry-standard SATA data connectors, and one 12V input DC power connector, all housed within an enclosure compatible with 5.25″ drive bays found in common PC chassis. The 4 controllers are independently switched with jumper blocks, allowing backward- and forward-compatibility with SATA chipsets and add-on controllers transmitting data at various speeds. A separate jumper switches the device's firmware from the 8 b/10 b “legacy frame” to the 128 b/130 b “jumbo frame” now in the PCI-Express 3.0 specification. The 5.25″ enclosure has room for 3 40×40 mm cooling fans, either 20 mm or 10 mm thick: fans are powered by 3 fan headers integrated onto the PCB, or a separate power supply installed in the PC chassis.

This invention pertains to progress in the field of very high-speed solid-state data storage technologies for modern computer systems.
A somewhat theoretical introduction to this invention can be found in the above article which the Inventor authored with the title: "Overclocking Data Storage Subsystems: One Approach to Variable Channel Bandwidth".
In the latter article, see FIG. 3 in particular.
A copy of that article is formally incorporated with this utility patent application, in both hard copy and electronic (.pdf) formats.
The use of Random Access Memory ("RAM") in prior devices previously developed and sold by foreign companies, primarily in Taiwan, were deficient for several reasons including, but not limited to:
    (a) use of full-sized dual in-line memory modules ("DIMM") instead of small outline dual in-line memory modules ("SO-DIMM");    (b) use of obsolete double data rate versions 1 and 2 ("DDR" and "DDR2" respectively) instead of modern DDR3 RAM;    (c) use of obsolete transmission rates of 150 and 300 Megabytes per second ("MBps"), instead of the current standard of 600 MBps;    (d) no means to increase transmission rates above 600 MBps;    (e) absence of any means to replace the 8-bit/10-bit ("8 b/10 b") legacy frame with the 128 b/130 b "jumbo frame" now found in the technical specifications for PCI-Express 3.0 as published in November 2010.


Basis motifs are determined from an input sequence through an iterative technique that begins by creating small solid motifs and continues to create larger motifs that include “don't care” characters and that can include flexible portions. The small solid motifs, including don't care characters and flexible portions, are concatenated to create larger motifs. During each iteration, motifs are trimmed to remove redundant motifs and other motifs that do not meet certain criteria. The process is continued until no new motifs are determined. At this point, the basis set of motifs has been determined. The basis motifs are used to construct redundant motifs. The redundant motifs are formed by determining a number of sets for selected basis motifs. From these sets, unique intersection sets are determined. The redundant motifs are determined from the unique intersection sets and the basis motifs. This process continues, by selecting additional basis motifs, until all basis motifs have been selected.

Pattern or motif discovery in data is widely used as a means of understanding large volumes of data such as DeoxyriboNucleic Acid (DNA) or protein sequences. There are a variety of currently existing pattern discovery techniques. Many of these techniques discover "rigid" motifs. Some of these techniques have been extended to "flexible" motifs.
A "rigid" motif is a repeating pattern that has the same length in every occurrence in an input sequence of data. The pattern contained in a rigid motif can contain "don't care" characters, which are generally symbolized by dots. A don't care character means that any character can occupy this particular location. For example, given a string s=abcdaXcdabbcd, the rigid motive m=a·cd occurs twice in the data, at positions 1 and 5 in s. A "flexible" motif is a repeating pattern that has a variable number of don't care characters. For instance, in the previous example, a flexible motif occurs three times, at positions 1, 5 and 9. At position 9, there would be two dot characters to represent two gaps instead of one. This flexible motif may be written as m=a·[1,2]cd, where the [1,2] indicates that one or two don't care characters are allowed.
Allowing motifs to have a variable number of don't care characters increases the number of discovered motifs but also increases discovery time and algorithm complexity.
Typically, the higher the number of repeating patterns in a sequence, the higher the number of motifs in the data. Motif discovery on such data, such as repeating DNA or protein sequences, is a source of concern because these data exhibit a very high degree of self-similarity (i.e., repeating patterns). The number of rigid motifs could potentially be exponential in the size of the input sequence and, in the case where the input is a sequence of real numbers, there could be an infinite number of motifs (assuming two real numbers are equal if they are within some δ of each other).
Usually, this problem of a large number of motifs is tackled by pre-processing the input, using heuristics, to remove the repeating or self-similar portions of the input, or by using a "statistical significance" measure. These types of models, therefore, reduce the number of motifs to a more manageable level. However, due to the absence of a good understanding of the domain, there is no consensus over the right model to use. In other words, if the domain is DNA, there may be insufficient information to know whether a statistical significance measure is correct. Consequently, important motifs may be discarded because of the particular statistical significance measure being used. Thus, there is a trend in different fields towards motif discovery that does not use models.
There has been empirical evidence showing that the run-time for "model-less" motif discovery is linear in the output size for rigid motifs. However, none of the currently known algorithms has a proven output-sensitive complexity bound, and the only known complexity bounds are all exponential in the input size n. In other words, current pattern discovery algorithms depend on the size of the input, regardless of the size of the output of discovered patterns. This is important because one input may be the same size as another, yet produce a much smaller output of discovered patterns. With current pattern discovery, pattern discovery for both of these inputs will take approximately the same amount of time.
In order to apply motif discovery techniques to real life situations, one has to deal with the fact that, in many applications, the input is known with a margin of error. Many amino acids in protein sequences, for instance, are easily interchanged by evolution without loss of function. Also, the use of distance matrices in the context of DNA sequences is common. For example, a character a can be viewed as a or b for pattern detection purposes, but ab cannot be viewed as an a. In all these situations, it is possible to view the input as a string of sets of characters instead of just characters. For instance, a sequence of the form baccta can be viewed as b{a,b}cct{a,b}. In some other applications, the input is an array of real numbers, and two distinct real numbers are deemed identical for pattern detection purposes if they are within some given δ>0 of each other. Conventional motif discovery algorithms deal with these situations in an ad hoc manner, with no uniform framework, such that the same algorithm cannot tackle all the scenarios described above.
Thus, what is needed are techniques that overcome the following problems: (1) the problem of flexible and rigid pattern discovery within reasonable complexity and time; (2) the problem of solely input-sensitive complexity; and (3) the problem of the non-uniform framework for real numbers and sets of strings of characters during pattern discovery.

Pattern discovery techniques for determining maximal irredundant and redundant motifs

International Business Machines Corporation


Several methods of controlling a vacuum cleaner (10) using various types of sensors (94, 96, 97, 98) are provided. One method is based on a differential pressure between a suction airflow path and ambient air and includes: detecting the differential pressure, comparing the detected differential pressure to a predetermined threshold, and, when the detected differential pressure is less than the predetermined threshold, initiating a predetermined control procedure. A status indicator (164) is updated based on the detected differential pressure. Another method is based on a level of electrical current flowing through a brush motor (100). Still another method is based on a type or condition of the floor being traversed. Yet another method is based on a distance to a surface of a floor over which the vacuum cleaner is advancing. In another aspect of the invention, a vacuum cleaner is provided. In various combinations, the vacuum cleaner includes a vacuum source (36, 38), a brush motor (100), a drive motor (104), a controller processor (74), a sensor processor (90), an overcurrent sensor (98), a suction airflow sensor (94), a floor type sensor (97), and a floor distance sensor (96).

The invention relates to methods of controlling a vacuum cleaner using various types of sensors. It finds particular application in conjunction with a robotic vacuum having a controller, a cleaning head, and an interconnecting hose assembly and will be described with particular reference thereto. However, it is to be appreciated that the invention is also amenable to other applications. For example, a traditional upright vacuum cleaner, a traditional canister vacuum cleaner, a carpet extractor, other types of vacuum cleaners, and other types of robotic vacuums. More generally, this invention is amenable to various types of robotic household appliances, both indoor, such as floor polishers, and outdoor, such as lawnmowers or window washing robots.
It is well known that robots and robot technology can automate routine household tasks eliminating the need for humans to perform these repetitive and time-consuming tasks. Currently, technology and innovation are both limiting factors in the capability of household cleaning robots. Computer processing power, battery life, electronic sensors such as cameras, and efficient electric motors are all either just becoming available, cost effective, or reliable enough to use in autonomous consumer robots.
Generally, there are two standard types of vacuums: upright and canister. Uprights tend to be more popular because they are smaller, easier to manipulate and less expensive to manufacture. Conversely, the principal advantage of canister vacuums is that, while the canister may be more cumbersome, the cleaning head is smaller. A few patents and published patent applications have disclosed self-propelled and autonomous canister-like vacuum cleaners.
Much of the work on robotic vacuum technology has centered on navigation and obstacle detection and avoidance. The path of a robot determines its success at cleaning an entire floor and dictates whether or not it will get stuck. Some proposed systems have two sets of orthogonal drive wheels to enable the robot to move directly between any two points to increase its maneuverability. Robotic vacuum cleaners have mounted the suction mechanisms on a pivoting or transverse sliding arm so as to increase the reach of the robot. Many robotic vacuums include methods for detecting and avoiding obstacles.
For example, U.S. Pat. No. 6,226,830 to Hendriks et al. and assigned to Philips Electronics discloses a canister-type vacuum cleaner with a self-propelled canister. The vacuum cleaner also includes a conventional cleaning head and a hose assembly connecting the cleaning head to the canister. The canister includes an electric motor, a caster wheel, two drive wheels, a controller, and at least one touch or proximity sensor. The controller controls at least the direction of at least one of the drive wheels. As a user operates the vacuum cleaner and controls the cleaning head, the sensors in the canister detect obstacles and the controller controls the canister to avoid the obstacles.
U.S. Pat. No. 6,370,453 to Sommer discloses an autonomous service robot for automatic suction of dust from floor surfaces. The robot is controlled so as to explore the adjacent area and to detect potential obstacles using special sensors before storing them in a data field. The displacement towards a new location is then carried out using the stored data until the whole accessible surface has been covered. One of the main constituent members of the robot includes an extensible arm that rests on the robot and on which contact and range sensors are arranged. When the robot is used as an automatic vacuum cleaner, airflow is forced into the robot arm. When one or more circular rotary brushes are provided at the front end of the arm, the cleaning effect is enhanced.
U.S. Pat. No. 6,463,368 to Feiten et al. discloses a self-propelled vacuum cleaner. The vacuum cleaner includes a pivotable arm and a cable to connect to an electrical receptacle for power. The arm includes a plurality of tactile sensors to recognize obstacles by touching the obstacle with the arm. The vacuum cleaner also includes a processor and a memory connected via a bus. An identified and traversed path is stored in an electronic map in the memory. Every obstacle identified on the path is entered in the map. The vacuum cleaner includes a cable drum for winding up the cable. The cable drum includes a motor to drive the cable drum for unwinding or winding the cable. The vacuum cleaner also includes a steering mechanism, wheels, and a motor for driving the vacuum cleaner along the path.
PCT Published Patent Application No. WO 02/074150 to Personal Robotics discloses a self-propelled canister vacuum cleaner. In one embodiment, the vacuum cleaner is autonomous. In another embodiment, the self-propelled vacuum cleaner is powered by standard utility power via a power cord. The canister vacuum cleaner includes a cleaning head module, a vacuum fan module (i.e., canister), and a hose assembly connecting the cleaning head module with the vacuum fan module. The vacuum fan module includes a controller that performs navigation and control functions for both the vacuum fan module and the cleaning head module. Alternatively, the controller may be separated from the vacuum fan module and the cleaning head module, and can be mobile. The vacuum fan module and the cleaning head module each include a drive mechanism for propulsion. The cleaning head module includes a cleaning brush assembly that can be motorized or air driven. The cleaning head module may also include a microcontroller that communicates with the controller.
However, none of the current robotic canister-like vacuum cleaners sense suction airflow, floor distance using light wave sensors, floor type using sonic wave sensors, or brush motor current.
U.S. Pat. No. 5,109,566 to Kobayashi et al. discloses a self-running cleaning apparatus with a floor sensor composed of an ultrasonic sensor for sensing the kind of floor surface, such as a carpet or a bare floor, and the state of the floor, such as a concave or convex floor.
U.S. Pat. No. 5,279,672 to Betker et al. discloses an automatic controlled cleaning machine with an infrared drop-off avoidance transmitter and receiver combination.
U.S. Pat. No. 5,321,614 to Ashworth discloses a navigational control apparatus with a plurality of vertical switches connected to a vehicle frame at various points around its periphery. The vertical switches each preferably comprise an electromagnetic switch that contacts the surface of the work area as the vehicle is driven there along and is capable of producing an obstacle signal when surface contact is lost due to a vertical drop greater than a predetermined magnitude. Other sensor means such as opto-electrical proximity sensors may also be employed in place of the electromechanical contact switches.
U.S. Pat. No. 5,341,540 to Soupert et al. discloses an autonomous apparatus for the automatic cleaning of ground areas. At least one sensor may be disposed at the front of the apparatus. This sensor may be of the infrared type and is placed and oriented beneath the apparatus towards the ground area in order to detect a break therein.
U.S. Pat. No. 5,377,106 to Drunk et al. discloses an unmanned vehicle with drop monitoring sensors aimed in a vertical direction detecting increases in the distance between their position and that of the floor traveled on by the vehicle. The drop monitoring sensors are preferably infrared sensors.
U.S. Pat. No. 5,634,237 to Paranjpe discloses a self-guided, self-propelled, convertible cleaning apparatus with a micro controller system that continuously monitors the condition of a suction motor. If the suction motor gets overloaded, the suction motor is stopped and a buzzer is sounded to alert the operator.
U.S. Pat. No. 5,940,927 to Haegermarck et al. discloses an autonomous surface cleaning apparatus. An electronic control device is provided for control of a drive motor associated with a brush roller. If the movement of the brush roller is blocked or obstructed to a predetermined extent, the control device is arranged to stop the brush roller motor and then transitorily activate the motor in the opposite direction and finally, after another stop, to reconnect the brush roller motor to operate in the original direction of rotation.
U.S. Pat. No. 6,493,612 to Bisset et al. discloses an autonomous vehicle, such as a robotic cleaning device, with downward looking wheel sensors that sense the presence of a surface in front of the wheels. Another sensor is provided at or near a leading edge of the vehicle for sensing the presence beneath the leading edge of the vehicle. The vehicle is arranged so that movement of the vehicle is possible if the leading edge sensor senses that there is no surface beneath the leading edge of the vehicle, provided that the wheel sensors indicate that there is a surface adjacent to the wheel. When the leading edge sensor senses that there is no surface beneath the leading edge of the vehicle, the vehicle performs an edge following routine.
U.S. patent application Publication No. US 2002/0189045 to Mori et al. discloses a self-moving cleaner with a level sensor that detects a difference in level of a surface to be cleaned. The level sensor is preferably an infrared sensor and is mounted to each corner of a main body in a manner to face slantingly downward.
U.S. Pat. No. 6,076,227 to Schallig et al. and assigned to Philips discloses an electrical surface treatment device with an acoustic surface type detector. The surface type detector delivers an output signal during operation which is characteristic of the type of surface to be treated and which is determined by a value of a physical quantity of air vibrations reflected by the surface to be treated which value is measured by a vibration detector of the surface type detector. In a special embodiment the physical quantity is an amplitude and the surface type detector is a vibration generator for generating air vibrations having a predetermined amplitude. The generated air vibrations preferably have a frequency of at least 15,000 Hz which varies within a predetermined range.
Thus, there is a particular need for an improved robotic canister-like vacuum cleaner the improvements of which apply to various types of vacuum cleaners, as well as other household appliances, both indoor and outside.

Sensors and associated methods for controlling a vacuum cleaner


A method for producing (R,Z)-5-tetradecen-4-olide, comprising the following reaction formulas; ##STR1##

1. Field of the Invention
This invention relates to a method for producing (R,Z)-5-tetradecen-4-olide. The present substance is a sex pheromone of a Japanese beetle (scientific name: Popillia japonica). This compound is useful for the extermination of the Japanese beetle through a pheromone trap.
2. Description of the Related Art
Japanese beetles are insect pests which live on fruit trees or, for instance grapes, lawn, etc. In recent years, a damaged lawn by Japanese beetles have become a problem especially on a golf course. Moreover, since a large amount of pesticides are used for extermination of Japanese beetles, pesticide pollution has caused a public discussion in the area near to a golf course.
Pheromone traps are able to exterminate a large amount of insect pests by utilizing a small amount of pheromone, and is practically applied for some insects. A pheromone trap against the Japanese beetle is therefore considered to be a useful means in order to solve said problem.
A method described in Agric. Biol. Chem., 51, 635-640 (1987) is known as a method for synthesizing a pheromone of Japanese beetle, i.e., (R,Z)-5-tetradecen-4-olide. This method is performed by synthesizing from arabinose an optically-active intermediate, (4R, 5S, 6R)-5,6-dihydroxytetradecan-4-olide, and then by eliminating diol from said intermediate according to the following steps: ##STR2##
However, this conventional method includes a step for utilizing chromic acid, a harmful reagent, as an oxidizing agent in order to synthesize the optically-active intermediate, (4R,5S,6R)-5,6-dihydroxytetradecan-4-olide. This method thus suffers from problems on practical use in that it lowers safety in synthesis manipulation and it causes environmental pollution through industrial waste.

Method for producing (R,Z)-5-tetradecen-4-olide


A method for controlling transmission power of a wireless device is provided. A WiFi link is established to a communication device. A data rate of data packets transmitted to the communication device is monitored. Information from the communication device is obtained in response to the transmitted data packets. A transmission power of the wireless device is decreased when the data rate of the data packets reaches a highest data rate and the first information satisfies a specific condition.

Field of the Invention
The invention relates to a wireless device, and more particularly to a method for controlling transmission power of a wireless device.
Description of the Related Art
In recent years, mobile phones have become more popular and have various powerful applications, such as "Hot Spot" wireless fidelity (WiFi) wireless Internet connection, which provides Internet access over a wireless local area network (WLAN) for users nearby a mobile phone. However, the mobile phone functioning as a Hot Spot will consume lots of power due to the mobile phone operating in a transmission mode.
Therefore, it is desired to save power for mobile devices in a transmission mode.

Method for controlling transmission power of wireless device


A three-phase AC voltage regulator is for adjusting a line voltage on transmission lines. The three-phase AC voltage regulator includes a sampling circuit, a reference-voltage circuit, a comparator, a switch, a power supply, and a compensator. The sampling circuit is for sampling the line voltage. The reference-voltage circuit is for receiving a line-to-line voltage from the transmission lines and generating a standard voltage. The comparator is for comparing the line voltage and the standard voltage to obtain a signal. The switch is for being turned on or off based on the signal. The power supply is for supplying various electric powers to the compensator. The compensator is for receiving the electric power and generating compensating voltages. The compensating voltages are used to compensate the line voltage.

1. Field of the Invention
The present invention generally relates to three-phase alternating current voltage regulators for balancing voltages on transmission lines between three-phase generators and loads, and more particularly to an automatically controlled three-phase alternating current voltage regulator.
2. Description of Related Art
Alternating current (AC) voltages generated from a three-phase generator are transmitted on transmission lines to various loads, such as electric motors. However, climatic conditions may result in fluctuation of the voltages in the transmission lines. If the loads receive the unstable voltages, they will operate unsteadily. Thus, it is necessary to balance the AC voltages in the transmission lines.
A microcomputer is typically used in a generator. Referring to FIG. 5, transmission lines 10 transmitting the alternating voltage generated from a three-phase generator 80 to a load 90 is depicted. A three-phase AC voltage regulator 999 is used for balancing the voltages in the transmission lines 10. The three-phase AC voltage regulator 999 includes a sampling circuit 20, a reference-voltage circuit 30, a microcomputer 40, an interface 50, and a compensator 70.
A line voltage is sampled from the transmission lines 10 by the sampling circuit 20. A line-to-line voltage is received from the transmission lines 10, and converted to a standard voltage by the reference-voltage circuit 30. The line voltage and the standard voltage are received, and compared by the microcomputer 40 to obtain a signal. The line voltage in the transmission lines 10 is compensated with the signal by the compensator 70. The microcomputer 40 is connected with a desktop computer via the interface 50 to monitor the three-phase AC voltage regulator 999.
However, the microcomputer is expensive, making the regulator also expensive.
Therefore, a three-phase AC voltage regulator is needed in the industry to address the aforementioned deficiency.

Three-phase alternating current voltage regulator

Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd.


A data encoding method having a prediction setting process that designates a numerically superior symbol as either a "0" or a "1", and the other one is designated as a numerically inferior symbol. Then a binary bit string composed of "0"s and "1"s is input, and the numerically superior symbol is predicted to continuously repeat for n symbols, where n is set as a prediction bit number. A prediction result output process outputs a prediction correct signal that is either a "0" or a "1" when a prediction is correct for the observed series. The process then moves to an operation to perform encoding of a bit series containing the next n symbols, or otherwise outputs the other signal (i.e., that is not used to represent that the prediction is correct) as a prediction failure signal. A similar prediction setting process and prediction result output process is recursively repeated by setting a new prediction bit number that is smaller than the above prediction bit number by n symbols when the prediction fails for a predetermined number of times. Further, the same prediction setting process and prediction result output process are recursively repeated using a prediction bit number changed to a new prediction bit number increased by n symbols when the prediction is correct for a predetermined number of times. Similar algorithms are applied to perform decoding.

1. Field of Invention
This invention relates to methods and systems for encoding and decoding data using run prediction.
2. Description of Related Art
The world of information theory that deals with binary signals is aware of arithmetic encoding methods. An arithmetic encoding method is an entropy encoding method that is intrinsically reversible (i.e., lossless). Also, arithmetic encoding is an ideal encoding method because it stores the information source. In contrast, alias encoding methods rely on non-stored information sources.
In arithmetic encoding, the stored information is divided into unequal length sections that correspond to the occurrence probability of each symbol in the data. The method assigns a symbol to each section. Sections which are able to be divided have coordinates that are acquired by repetitive recursive division and are expressed as binary numbers. The method encodes those coordinates within the corresponding section.
In comparison to encoding methods which require block encoding of specific codes and information source symbols, arithmetic encoding methods have several advantages. Such advantages include: reduced memory requirements, high efficiency encoding and the ability to easily perform adaptive encoding. An arithmetic encoding method can also compress information to a level that is nearest to the entropy of the information. Arithmetic encoding is also particularly suitable for Markov information source encoding.
Several different types of encoders have been proposed for arithmetic encoding methods. For example, a Q encoder, a MEL encoder and a Mini-Max encoder have been proposed. A QM encoder is also known as an improvement over other arithmetic encoders. QM encoders are commonly used in both color still image encoding (such as JPEG) and binary image encoding (JBIG) standards.
A QM encoder encodes binary information sources. Therefore, prior to encoding multi-level information sources, the multi-level information source requires pre-processing to make it binary. This conversion generally increases the number of symbols to be encoded. However, it is possible to convert to a binary series without increasing the amount of information.
The design of a QM encoder is explained in detail in the regulations of JPEG and JBIG. However, for the sake of comparison with the later-explained present invention, the QM encoder scheme is explained briefly using FIG. 12. An explanation of the structure of an arithmetic decoding type of entropy decoder is omitted here because it is practically identical to the structure of an entropy encoder.
The QM encoder 101 includes an arithmetic calculator 102 and a development probability generating means 103. The development probability generating means 103 functions as a state storage device. A state parameter table is written in the development probability generating means 103 to determine a symbol occurrence rate for the encoding process. The state parameters in the state parameter table are specified by the input state signals 106. The arithmetic calculator 102 outputs a readout address during the update of the calculated parameters. The development probability generating means 103 outputs state parameters to the arithmetic calculator 102 in accordance with the readout address. The arithmetic calculator 102 compresses the input data 104 into encoding data based upon the data input into the arithmetic calculator 102. Additionally, state signals 106 are input to the development probability generating means 103. The state signals 106 are used to increase the compression rate. The state signals 106 include, for example, reference pixel data such as is referenced by a Markov model.
The control routine of the QM encoder shown in FIG. 12 is described in the flowchart in FIG. 13. The flowchart of FIG. 13 starts and proceeds to step S100 where a value 0.times.0000 is stored in register C, a value of 0.times.FFFF is stored in register A and an index ST is initialized. Next, in step S101, one bit of the input data is fetched. In step S102, the control routine determines whether the input bit is a numerically superior symbol or a numerically inferior symbol. The numerically superior symbol is arbitrarily designated as either a "0" or a "1" and the numerically inferior symbol is designated as the other of a "0" or "1". When the input bit is the numerically superior symbol the control routine continues to step S103. When the input bit is a numerically inferior symbol the control routine proceeds to step S106.
The occurrence probability of a numerically inferior symbol can be obtained by referring to a probability estimate table LSZ using the index ST. The occurrence probability of the numerically superior symbol can be obtained by subtracting the probability of the numerically inferior symbol from the contents of register A.
In step S103, the occurrence probability of the numerically superior symbol is stored in register A. Then, in step S104, the control routine determines whether the highest ranking bit in register A is "1". If it is "1" then the control routine continues to step S105 and if it is "0" then the control routine jumps to step S114. In step S105, the index ST, for encoding the next symbol, is set using the probability estimate table NMPS using the index ST.
In step S106, the occurrence probability of a numerically inferior symbol is stored in register A. Then, in step S107, the value in register A is added to the value in register C and the sum is stored in register C. In step S108, the control routine determines whether the probability estimate table SWITCH outputs a "1" using the index ST. If, in step S108, the probability estimate table SWITCH outputs a "1" then the control routine continues to step S109 where the control routine changes the numerically superior symbol.
If, in step S108, the probability estimate table SWITCH does not output a "1", then the control routine jumps to step S110. In step S110, the index ST is set to the output of a probability estimate table NLPS using the index ST and the control routine continues to step S111.
In step S111, registers A and C are shifted one bit to the left. Then in step S112, the highest bit that has flowed out of register C is output as a code. The control routine then continues to step S113, where the control routine determines whether the highest bit in register A is "1". If, in step S113, the control routine determines that the highest bit in the register A is "1" then the control routine returns to step S111. If, however, the control routine determines that the highest bit in register A is not "1" then the control routine continues to step S114. In step S114, the control routine determines whether the current symbol is the last symbol in the input bit series. If in step S114, the control routine determines that the current symbol is not the last symbol in the input bit series then the control routine returns to step S101. If, in step S114 the control routine determines that the current symbol is the last symbol in the input bit series then the control routine returns control to the environment in which the control routine of FIG. 13 operates.
Thus, as shown in FIG. 13, the QM encoder 101 encodes the input bit series using probability estimate tables LSZ, NMPS and NLPS.
While the arithmetic encoding method of the QM encoder has a good encoding efficiency, the encoding speed is slow because the encoding is performed one bit at a time. In comparison, the encoding method of the Lempel-Ziv system has superior utility because the encoding speed is much faster. However, the speed benefits of the Lempel-Ziv system are significantly overshadowed by the QM encoder because the QM encoder has a much higher encoding efficiency. Conventional encoding technology does not have an encoding efficiency which is approximately as good as the arithmetic encoding method and which also has an encoding speed which is approximately as fast as the Lempel-Ziv system.

Method and system for encoding and decoding data using run prediction


A portable system for on-site batch mixing of cementitious materials, such as mortar and grout, includes a batch mixing machine for metering and mixing cement, sand and water, a cement storage silo sized to hold at least one commercial delivery truckload of cement, and a pair of sand supporting ground pads. The large cement storage silo significantly reduces the manpower and equipment costs associated with the overall batch mixing process, and the sand support pads operate to prevent dirt contamination of the cementitious mixture. A specially designed pressurized shaft bearing/seal structure provided on the batch mixer portion of the mixing machine reduces grease seal and bearing maintenance by essentially precluding entry of cementitious material into the seal and bearing. The pressurized system utilizes either a spring or air under pressure to establish a higher pressure in the grease supply than that in the mortar.

The present invention relates generally to apparatus and methods for mixing cementitious materials, such as mortar and grout, and more particularly relates to portable systems for mixing these materials at construction sites.
Disclosed in copending U.S. application Ser. No. 252,379 is a portable, on-site system for batch mixing cementitious construction materials, such as mortar and grout, which has proven to be a substantial improvement over prior on-site batch mixing systems. The system includes a truck-transportable batch mixing machine operative to store and batch-mix the three components of cementitious construction material-namely, cement, sand and water. The machine supports, on a frame structure, water, cement and sand storage and dispensing vessels which, via a mixing control system described in detail in the copending application, accurately deliver predetermined quantities of these three stored constituents to a bladed batch mixer portion of the machine used to subsequently mix a desired "batch" of the resulting grout, mortar or the like for construction site use.
Substantial economics of operation at job sites requiring greater numbers of batch volumes can be effected using in combination with the system a bulk cement storage facility which automatically delivers cement to the batch cement mixing proportioning hopper as disclosed in application Ser. No. 07/537,475. This not only allows the cement to be purchased in truckload lots but reduces equipment and manpower costs.
The batch mixer portion of the mixing machine illustrated in copending U.S. application Ser. No. 252,379 is provided with a generally conventional bearing and seal structure operatively associated with the drive shaft which extends through the mixer housing. In common with the shaft bearing/seal structures on other types of cementitious mixers, it has been found that this structure requires frequent greasing maintenance, and tends to rather quickly permit seal abrasion and resulting entry of the cementitious mixture into the shaft bearing. Such entry of the abrasive mixture into the shaft bearing, as is well known, leads to premature bearing failure. The intense usage of the batch mixer in the mixing apparatus of the present invention resulted in excessive down time for maintenance of the bearings.

Portable batch mixing apparatus for cementitious construction materials


A passenger compartment visor assembly of a vehicle is disclosed. The visor assembly (10) includes a first member (16) and a second member (18). A support member (28) is positioned between the first member (16) and the second member (18). The first member (16) and the second member (18) are moveable relative to support member (28) between an open position and a closed position. The first member (16) and second member (18) each include an inner surface (20, 24) and an outer surface (22, 26). At least one of the inner surfaces (20, 24) includes at least one integrally-formed storage receptacle (30).

A visor assembly is traditionally positioned in the passenger compartment of an automobile at an upper corner of a headliner. Functionally, the visor assembly may be pivoted from a stowed position about the headliner to a lowered position about the windshield to shield a passenger's eyes from sun and glare. In addition to screening sun and glare from a passenger's eyes, it is known that conventional visor assemblies include additional accessories, such as mirrors, lights and the like. The additional accessories add cost and weight to the visor assembly, but also add conveniences that automobile passengers appreciate and pay for in luxury upgrades.
Additionally, it has become common practice for vehicle operators and passengers to use visor assemblies for the purpose of loosely storing items against the headliner such as, for example, papers, parking garage receipts, maps, and the like, when the visor assembly is positioned in the stowed position against the headliner. However, when the visor assembly is deployed downwardly against the windshield, the loosely-stowed items typically fall to the floor. To overcome this problem, conventional visor assemblies have been developed to include an elastic band, or the like, to positively secure items to the visor assembly such that when the visor assembly is deployed from the stowed position against the headliner to an in-use position against the windshield, the items are held in place about the visor assembly.
Recently, aftermarket 'add on' visor assembly accessories have been developed to function in the stowage of items about the visor assembly. Examples of an 'add on' visor assembly accessory directed to the stowage of compact discs are described in U.S. Published Patent Application No. 2003/0183667 and U.S. Design Pat. Nos. 432,490 and 453,728. Such aftermarket storage cases include a plurality of storage receptacles that promote open access, stowage, and protection of the compact discs when the visor is stowed against the headliner, or, alternatively, when the visor is deployed about the windshield.
Known aftermarket compact disc storage cases have a number of disadvantages. First, the storage cases are typically bulky and add weight to the visor assembly, and because most visor assemblies are not designed or manufactured with the intent to withstand such applied additional weight, some visor assemblies may not support the 'add-on' storage case with its contents, which results in the inadvertent deployment of the visor against the windshield. When deployed without notice against the windshield, the visor assembly may undesirably reduce an operator's visibility. Additionally, straps that are used to secure the storage case to the visor assembly may damage the outer surfaces of the visor. For example, the straps may wear the vinyl, leather, or cloth material covering the visor assembly, such that undesirable strap impressions or slits are left in the visor assembly material when the storage case is removed. Even further, the straps may not be positively secured, or, in another situation, be long enough to accommodate most visor assemblies, thereby creating a dangerous operating situation if the straps should fail. Failure of the straps would result in the storage case plummeting from the visor assembly and causing a distraction to the vehicle operator.
Thus, there remains a need to produce a visor assembly that provides storage for materials, such as compact discs, but does not damage the visor assembly, place a potentially damaging load on the visor assembly, or inadvertently reduce visibility of the operator, which may be caused when the visor assembly is inadvertently moved by gravity from a stowed position to a deployed position.

Visor assembly with integrated storage receptacles


An electromagnetic interference (EMI) shielded device and a method for making an EMI shield device are disclosed. The EMI shielded device may include an electrical circuit and an encapsulation layer disposed on a portion of the electrical circuit. The encapsulant layer having a plurality of particles dispersed therein, wherein the plurality of particles are suitable for shielding electrical circuitry from EMI. The method for making an EMI shielded device may include providing an electrical circuit, and depositing an encapsulant material upon a portion of the electrical circuit, wherein a plurality of EMI shielding particles are dispersed within the encapsulant material. An additional method may include depositing a dielectric material upon a portion of the electrical circuit and depositing an encapsulant material upon a portion of the dielectric material and the portion of the electrical circuit, wherein a plurality of EMI shielding particles are dispersed within the encapsulant material.

It is often desirable to provide electromagnetic interference (EMI) shielding for electrical components of an electrical circuit. Electromagnetic interference shielding may be used to isolate EMI from external sources and from other components of the same electrical circuit or the same electrical device. One type of EMI shielding includes a metal plate mounted on the surface of an electrical circuit.

Shielding encapsulation for electrical circuitry


The invention relates to a labeled transition metal complex comprising a transition metal atom, a reactive moiety for allowing a chemical or biological entity to become attached to the transition metal atom, an inert tridentate moiety as a stabilizing bridge, and a marker. The invention also relates to a labeled chemical or biological entity comprising a chemical or biological entity which is attached to said labeled transition metal complex, to the use of said complex for creating a defined shift in the molecular mass of said entity in order to facilitate mass spectrometric analysis of said entity, to methods for rendering chemical or biological entities distinguishable by mass spectrometry as well as to methods for mass spectrometric analysis of the chemical or biological entities. In addition, the present invention also relates to a set of at least two of said transition metal complexes of different molecular mass, to transition metal complexes comprising different stable isotopes, to chemical or biological entities obtained by a method of the invention and to a kit of parts supporting the use and/or methods of the invention.

The invention relates to labeled transition metal complexes, labeled chemical or biological entities comprising such complexes, methods for preparing said labeled chemical or biological entities, as well as to specific uses of such transition metal complexes.
The labeling of bio-organic molecules, such as DNA molecules, is desirable for applications in fields such as recombinant DNA technology. In many cases, however, one wishes not to label the nucleic acid macromolecule, but to label a certain nucleotide. The main purpose for labeling nucleotides is that these labeled nucleotides can be incorporated in nucleic acid molecules. This way, the location of the label on the resulting polynucleic acid can be influenced, which is not possible when a label is attached to the macromolecule.
It is known that nucleotides can be linked in a sufficient way to a label by means of a cis-platinum complex. However, such labeled nucleotides are not satisfactorily built in into DNA molecules by DNA polymerase, if at all.
The available alternative methods for labeling a nucleotide, which can be incorporated into a polynucleic acid are the more conventional methods for labeling. However, these methods also have a major disadvantage as they are not suitable for labeling any nucleotide. In some cases, for instance, when only a few residues of a certain nucleotide are present in a certain polynucleic acid, or when the terminating nucleotide residue of a polynucleic acid is to be labeled, it is desired to be able to label any nucleotide. An example of such a conventional method has been described by Dale et al., Biochemistry, 14, (1975), 2447-2457, which method involves direct covalent mercuration as a labeling technique. Dale et el. report that cytosine and uracil may be mercurated at their C5-position under mild conditions. However, they also report that for adenine, thymine and guanine bases negative results were obtained.
Thus, there is a need for a universal labeling system, which is excellent for linking labels and bio-organic molecules, including all different nucleotides, and which also makes it possible to enzymatically build in any nucleotide labeled through said labeling system in a polynucleic acid in an efficient manner.