The present invention provides a process for the preparation of tailored precursor materials in a solid powder form, useful for geopolymeric system containing pentavalent silicon complexes in a solid powder form. The raw materials used are fly ash, sodium hydroxide, and rice husk with and without sodium silicate. The tailored precursors so obtained in solid powder need only water at site, instead of highly alkaline solution for obtaining the cementitious geopolymeric materials.

In the conventional geopolymeric system, geopolymeric conventional materials are prepared by dissolution and polycondensation reaction between the (a) untailored solid reactive powders of alumino-silicate materials and (b) essentially are highly alkaline aqueous solution.
Reference may be made to the article "Sustainable design of geopolymers—Integration of economic and environmental aspects in the early stage of material development authored by M. Weil, E. Gasafi, A. Buchwald and K. Dombrowski, 11th Annual International Sustainable Development Research Conference, Helsilnki, Finnland, 2005; pp 1-14, wherein it is reported that the conventional process of making geopolymeric materials, essentially consist of a silicate aluminate solid component as binding material and an alkaline solution component as alkaline activator. However, the drawbacks of this process are the use of alkali activators in solution form as one of the essential component which results in difficulty in handling the solution.
Reference may be made to article "Acid resistance of fly ash based geopolymer mortars, authored by Suresh Thokchom, Partha Ghosh, and Somnath Ghosh, International Journal of Recent trends in Engineering, 1(6) 2009, pp 36-40, wherein it is reported that mixture of sodium hydroxide and sodium silicate solution were used to activate fly ash for producing geopolymer binder. However, the drawbacks of this process are the use of alkali activators in solution form as one of the essential component which results in difficulty in handling the solution.
Reference may be made to the article "Alkali activated Geopolymers: A Literature Review" authored by Jeffrey C. Petermann and Athar Saeed and Michael I. Hammons; Air Force Research Laboratory Materials and Manufacturing Directorate, July 2010, contract No. FA4819-07-D0001 pp: 1-99, wherein it is reported that in the conventional process of making geopolymeric materials, essentially fly ash or other pozzolona are mixed with the alkaline solutions. However, the drawbacks associated with the process are use of alkali activators in solution form as one of the essential component which results in difficulty in handling the solution. Another drawback associated with the process is use of untailored raw materials resulting in development of products with unpredictable properties.
Reference may be made to article 'Mechanical and microstructural properties of alkali-activated fly ash geopolymers, Journal of Hazardous Materials, 181(1-3), 2010 pp 35-42 wherein aqueous solutions of Ca(OH)(2), NaOH, NaOH+Na(2)CO(3), KOH and sodium silicate (water glass) of various concentrations were used as alkali activators. It was established that the nature and concentration of the activator was the most dominant parameter in the alkali-activation process. However, the drawbacks associated with the process is use of alkali activators in solution form as one of the essential component which results in difficulty in handling the solution and also the use of untailored raw materials resulting in development of products with unpredictable properties.
Reference may be made to article 'Fly Ash-Based Geopolymer Mortar Incorporating Bottom Ash, authored by Djwantoro Hardjito, and Shaw Shen Fung, Modern Applied Science, 4 (1), 2010, 44-52, wherein mixture of Potassium Silicate (K2SiO3) solution and Potassium Hydroxide (KOH) solution were used as the alkaline activator. The mixture of fly ash and aggregates was mixed mechanically and Potassium Silicate (K2SiO3) solution and Potassium Hydroxide (KOH) solution were premixed separately. However, the drawbacks associated with the process is use of alkali activators in solution form which results in difficulty in handling the solution and also the use of untailored raw materials resulting in development of products with unpredictable properties. Reference may be made to article "Preliminary study on effect of NaOH concentration on early age compressive strength of kaolin-based green cement" authored by H. Kamarudin, A. M. Mustafa Al Bakri, M. Binhussain, C. M Ruzaidi, M. Luqman, C. Y. Heah, Y. M. Liew, 2011 International Conference on Chemistry and Chemical Process IPCBEE, 10, 2011, pp 18-24 wherein sodium hydroxide was mixed with distilled water to prepare solutions of concentrations 6-14M, cooled to room temperature and mixed with sodium silicate to prepare liquid alkali activator 24 hours before use. However, the drawbacks of the process is use of alkali activators solution which results in difficulty in handling the solution.
Reference may be made to article "Review on fly ash-based geopolymer concrete without Portland Cement" Journal of Engineering and Technology Research authored by Mohd Mustafa Al Bakri, H. Mohammed, H. Kamarudin, I. Khairul Niza and Y. Zarina, 3(1), pp. 1-4, January 2011 wherein it is reported that sodium silicate and potassium hydroxide were used as alkali activators and usually either of this material was mixed with sodium hydroxide to produce the alkaline solution of molarity (M) 7 to 10 M and was prepared a day before it is to be mixed with fly ash and aggregates to prepare concrete. However, the drawbacks of the process is use of alkali activators solution which results in difficulty in handling the solution and also the use of untailored raw materials resulting in development of products with unpredictable properties.
Reference may be made to article "Investigating shrinkage changes of natural pozzolan based geopolymer cement paste" authored by E. Najafi Kani and A. Allahverdi, Iranian Journal of Materials Science and Engineering 8 (3) 2011, pp 50-60 wherein it is reported that sodium hydroxide was added to sodium silicate solution in appropriate quantity to adjust the dosage of activator to prepare geopolymer mixes. However, the drawbacks of the process are again the use of alkaline activator solution which results in difficulty in handling the solution.
Reference may be made to the article "The processing, characterization, and properties of fly ash based geopolymer concrete, M. Mustafa Al Bakri, H. Kamarudin, M. Bnhussain, I. Khairul Nizar, A. R. Rafiza and Y. Zarina, Rev. Adv. Mater. Sci. 30 (2012) 90-97 wherein it is reported that the two major constituents of geopolymer source material consist of alumina-silicate and alkaline liquids. Most commonly used alkaline activators are a mixture of sodium or potassium hydroxide (NaOH, KOH) and sodium silicate or potassium silicate and mixing of the activators 24 hours prior to use was also recommended in the article. However, the drawbacks of the process are use of alkali activators solution which results in difficulty in handling the solution and also the use of untailored raw materials resulting in development of products with unpredictable properties.
Reference may be made to the patent PCT/AU2012/001193 wherein reported is the use of silicate solution and alkali hydroxide for preparation of geopolymer mix. However, the drawbacks of the process is use of alkali activators solution which results in difficulty in handling the solution and also the use of untailored raw materials resulting in development of products with unpredictable properties.
Reference may be made to the article 'Reactivity, workability and strength of potassium versus sodium-activated high volume fly ash-based geopolymers authored by D. Sabitha, J. K. Dattatreya, N. Sakthivel, M. Bhuvaneshwari and S. A. Jaffer Sathik, Current Science, 103(11), 2012, pp 1320-1327 wherein commercial-grade sodium hydroxide and potassium hydroxide flakes were dissolved in distilled water to obtain the respective alkali solutions one day prior to geopolymer cement preparation to avoid excessive heat resulting from the exothermic reaction. Sodium Silicate and potassium silicate solutions were used as the alkaline activators. However, the drawbacks of the process is use of alkali activators solution which results in difficulty in handling the solution and also the use of untailored raw materials resulting in development of products with unpredictable properties.
Reference may be made to the article 'Geopolymer Concrete' Concrete Pavement, CPTP Technology Programme, website, wherein it is reported that user friendly geopolymers which can be used under conditions similar to Portland cement are the current focus of extensive worldwise research. However, the drawbacks associated with production of geopolymer are safety risk associated with the high alkalinity of the activating solution. These facts may limit the practical use of geopolymer concrete.
Reference may be made to the article—Mechanical Properties and Microstructure of Class C Fly Ash-Based Geopolymer Paste and Mortar authored by Xueying Li, Xinwei Ma, Shoujie Zhang and Enzu Zheng′ Materials 2013, 6(4), 1485-1495 wherein class C Fly ash was used to carry out experiments and alkali activator were sodium silicate and sodium hydroxide solution. However, the drawbacks of the process are again use of alkaline activator solution and also safety risk associated with the high alkalinity of the activating solution. The use of untailored fly ash is another drawback of the process which resulting in development of product with unpredictable properties.
Reference may be made to the patent WO 2008113609 A2, wherein the geopolymer coating is two component and before use the liquid component (alkaline agent) and solid component (aluminosilicate material) must be mixed with each other. However, the drawbacks of the process is use of raw materials in two part system for preparation of geopolymer coating i.e alkaline agent in liquid form as one part and solid aluminosilicate material as second part which causes difficulty in practical application. The drawbacks of the conventional processes mentioned in the above articles are: the use of high concentration of alkali activators in solution form with pH in the range of 12-14 ii) generation of heat when water is mixed with alkali activators for preparation of solution. This results in difficulty in handling the solution by unskilled workers while working with geopolymer systems.
From the above mentioned prior art and based on the drawbacks of the conventional process, the various issues to be addressed and problems to be solved are as follows:
The last two decades have witnessed significant achievements in the area of making advanced multifunctional materials and one of them is the development of inorganic geopolymeric materials. However, the development of this unique technology suffers from following drawbacks:
a) Firstly, the work so far carried out in the area of development of geopolymeric materials is basically restricted and is essentially based on the need of two parts system wherein i) highly alkaline solutions act as one part ii) and untailored raw materials act as second part, thereby prohibiting the techno-commercial viability of the conventional geopolymeric materials.
b) Secondly, the use of untailored solid reactive powders of alumino-silicate materials in the conventional geopolymeric process result is non-uniform end products.
c) Since in the conventional geopolymeric system, it is essential to mix both the parts i.e. part one and part two materials in appropriate proportions, there is high risk involved in handling of their highly alkaline solutions.
d) The Application Spectrum of conventional geopolymeric materials is narrow as they have relatively limited resistance to heat, acidic environment and durability aspects. Thus in order to overcome the above raised drawbacks awaited with the prior art, the inventors of the present invention realized that there is new process to provide a versatile geopolymer cement that can be mixed with only water and can be hardened like cement, which is the game changing advancement that will revolutionize the use of geopolymer cementitious materials in construction and infrastructure.

Process for the preparation of geopolymeric functional materials in a solid form

Council of Scientific & Industrial Research


A portable terminal device comprises an antenna for receiving radio waves from a base station, an incoming call alarm for notifying the user of the reception of radio waves, a control circuit provided between the antenna and the alarm for activating the alarm and a memory. The memory is capable of storing therein a predetermined incoming call rejecting condition or incoming call notifying condition via the control circuit. The control circuit includes comparison means for detecting whether one of information as to the current time and date, information as to the self-location of the device and information as to the caller or the combination of these items of information is in match with the incoming call rejecting condition or incoming call notifying condition stored in the memory. The control circuit has the function of changing over to predetermined incoming call rejecting means or incoming call notifying means when a match is obtained.

A portable telephone or cellular phone will be described below as an example of portable terminal device. FIG. 4 is a perspective view showing the appearance of a conventional cellular phone, and FIG. 5 is a block diagram of the interior thereof. The phone has a cabinet 1 comprising two cabinet half segments 10, 10a which are connected together by a hinge 11. The cabinet half segment 10 is provided with an antenna 6, microphone for capturing voice and a plurality of manual buttons 20, 20. The other cabinet half segment 10a is provided with a display 5 which is an LCD and a speaker 90 for reproducing the voice of the other party.
With reference to FIG. 5, a signal from a base station 7 is received by a receiver 61 via the antenna 6 and a duplexer 60 and sent to a control circuit 3 having a timer function. The duplexer 60 is a device which uses the same antenna for two-way transmission and which handles transmitted signals and received signals using the single antenna 6.
The control circuit 3 has connected thereto an incoming call alarm 50 comprising a ringer and vibrator for notifying the user of incoming calls, a memory 4 having stored therein an operating program, melody to be produced upon receiving an incoming call, etc., the display 5 which is an LCD for showing the state of communication, a manipulator 2 including the manual buttons 20, 20, the microphone 9 and the speaker 90.
The incoming call alarm 50 notifies the user of an incoming call received. The voice of the other party is emitted by the speaker 90, while the voice of the user is captured by the microphone and sent from a transmitter 62 to the antenna 6 via the duplexer 60. At this time, the display 5 shows the state of communication, etc.
Cellular phones have been proposed in recent years which are adapted to determine the location of the phone itself using GPS, i.e., Global Positioning System (see, for example, the publications of JP-A No. 2000-241964 and JP-A No. 1999-64482). The principle of GPS will be described briefly with reference to FIG. 6.
As shown in FIG. 6, the GPS antenna 8 of a cellular phone receives signals, termed C/A cord, from four artificial satellites V1, V2, V3, V4 whose positions are known relative to the earth. The C/A cord is transmitted also from the cellular phone. The time difference between the C/A cord transmitted from the phone and the C/A cord received from each artificial satellite is measured, and the measurement is multiplied by the velocity of propagation of radio waves to obtain the distance from the satellite to the GPS antenna 8. The position and height of the GPS antenna 8 can be determined by solving an equation representing a sphere (because the earth is a sphere) using the positions of the satellites and the distances from the satellites to the GPS antenna 8.
However, the cellular phone described has the following problems.
With an increase in the number of subscribers of cellular phones, problems arise as to how to use the phone in public places.
Cellular phones should not be used, for example, in hospitals since the radio waves of cellular phones are likely to cause a malfunction of medical electronic devices. Incoming call sound alarms cause a public nuisance if released in libraries or museums which must be kept quiet. In such cases, forcible restrictions on the use of cellular phones are desirable, but the matter is presently left to the discretion of the user. Especially as to incoming calls, if the subscriber is at a location accessible by incoming radio waves, it is impossible to shut off the incoming call unless the subscriber turns off the power source. It is nevertheless troublesome for the user to turn on or off the power source every time the user moves from one place to another.
In view of the fact that cellular phones adapted to detect their own location as described above are placed into wide use, the present applicant has conceived the idea of specifying an area where no phone calls should be made and causing the phone to automatically reject incoming calls when the location of the phone as detected by GPS or the like is within the specified area. The inventor has also conceived the idea of specifying not only areas but also callers and time as to incoming calls and rejecting the incoming call from the specified person in the specified period of time.
An object of the present invention is to automatically reject incoming calls to a cellular phone as positioned in a specified location at a specified time, and incoming calls from a specified subscriber so as to eliminate the cumbersome procedure of turning on or off the power source.

Portable terminal device and communications device system wherein the device is used


The hair extension of the present invention includes hair strands affixed to a ring assembly. The ring assembly comprises an inner ring and an outer ring. The inner ring is configured to nest within the outer ring, with distal ends of the hair strands impinged between the inner and outer rings. A plait of a user's hair is inserted through the ring assembly of the hair extension. In one embodiment, the hair extension is attached to the plait with a band, or by sewing the hair extension to the plait. In another embodiment, the ring assembly is modified with a fastening assembly for fastening the hair extension to the plait.

1. Field of the Invention
The present invention relates to hair supplements, particularly to hair supplements having structure which facilitates the attachment of the hair supplement to the hair.
2. Description of the Related Art
Hair extensions are commonly attached to plaited hair to achieve a new hair style. To make sure the extension is securely attached to the hair, it has heretofore been necessary to weave the wearer's actual hair to the hair extension. This tedious process takes several hours to complete, and the weaving eventually becomes undone.
What is needed is a hair extension which quickly and easily attaches to plaited hair without requiring weaving.


Speaker-specified hints are used to establish conditions for a speech recognition system to select a recognition result for a previously provided utterance from among various possible homophones. The hints may characterize the utterance by a linguistic property, such as an orthographic, morphological, or semantic property.

The present invention relates to speech recognition systems, and more particularly, to dictation systems.
One of the most difficult problems for speech recognition systems is how to choose the correct alternative from a list of words that are pronounced similarly or identically, but spelled differently. Such similar sounding words are known as homophones. For example, in English, xe2x80x9cread, redxe2x80x9d or xe2x80x9csend, sentxe2x80x9d are such homophones, as are the French words xe2x80x9cparle, parles, parlentxe2x80x9d. Humans select the correct homophone by considering the context in which a given word appears, or by understanding the content of the text. This technique is, however, not yet feasible for computer systems.
In current computer-based speech recognition systems, one alternative is selected. If that alternative is incorrect, the user may then go and correct the selection, for example, by choosing another alternative from a list of similar-sounding words. This method has the disadvantage that the user must spot the mistake in the recognized text, and then correct it. This takes extra time, breaks the flow of dictation, and carries the risk that some errors may be overlooked.
In accordance with a preferred embodiment of the invention, a method is provided for utilizing a speech recognizer to distinguish a provided utterance from one or more similar-sounding utterances based on a speaker-specified hint. The method includes identifying a hint and associating it with the provided utterance, using the hint to establish a condition for distinguishing the provided utterance from the one or more similar-sounding utterances, and selecting a recognition result that satisfies the condition. The recognition result is derived in conjunction with the operation of the speech recognizer.
In accordance with further embodiments of the invention, selecting a recognition result includes providing a list of alternative recognition possibilities and filtering the list based upon the condition. The speech recognizer may be used to provide entries in the list of alternative recognition possibilities. Alternatively, or in addition, a dictionary may be used to provide entries in the list. The hint may be a linguistic property characterizing the provided utterance or, in the same or an alternative embodiment, the hint may make reference to the context of previous dictation to characterize the provided utterance. Where the hint is a linguistic property, it may be an orthographic, morphological, or semantic property of the provided utterance (As used in this description and in the following claims, the term xe2x80x9cfractional spellingxe2x80x9d means providing the spelling for a portion of the word, wherein the portion need not, but might possibly, include the beginning of the word, and does not include the whole word).
In accordance with a still further embodiment of the invention, the hint may provide some other desired criterion for selecting the provided utterance. The utterance may be a word, or alternatively, a phrase. For the purposes of this description and the following claims, a xe2x80x9chintxe2x80x9d excludes a complete spelling of a word or phrase. The speech recognizer may also use a plurality of hints. In accordance with this embodiment, a method is provided for utilizing a speech recognizer to distinguish a provided utterance from one or more similar-sounding utterances. The method includes identifying a plurality of hints and associating them with the provided utterance, using the hints to establish conditions for distinguishing the provided utterance, and selecting a recognition result that satisfies the conditions. The recognition result is derived in conjunction with the operation of the speech recognizer.
In accordance with another aspect of the present invention, an improved speech recognition system is taught for distinguishing a provided utterance from one or more similar-sounding utterances when a speaker-identified hint is provided. The improved speech recognition system provides a text output in response to a spoken input. The system includes a hint recognizer for identifying the speaker-identified hint and associating it with the provided utterance. The system also includes a condition specifier, coupled to the hint recognizer, which uses the hint to establish a condition for distinguishing the provided utterance. The system further includes a result selector, coupled to the condition specifier, which selects a recognition result that satisfies the condition.
In accordance with a further embodiment of the invention, the result selector includes a filter operative on a list of alternative recognition possibilities. In a still further embodiment, the improved speech recognition system also includes a dictionary, coupled to the result selector, to provide entries in the list of alternative recognition possibilities. As previously mentioned, the hint may be a linguistic (e.g., orthographic, morphological, or semantic) property characterizing the provided utterance, or may make reference to the context of previous dictation to characterize the provided utterance, or may provide some other desired criterion for selecting the provided utterance.
In accordance with yet a further embodiment of the invention, a system is taught for utilizing a plurality of hints to distinguish a provided utterance from one or more similar-sounding utterances. The system includes a hint recognizer for identifying the hints and associating them with the provided utterance. The system also includes a condition specifier, coupled to the hint recognizer, for using the hints to establish conditions for distinguishing the provided utterance. The system further includes a result selector, coupled to the condition specifier, for selecting a recognition result that satisfies the conditions.

Apparatus and method for distinguishing similar-sounding utterances speech recognition


A new food pan for placing on the grates of a barbecue grill for permitting grilling of small foods which would otherwise fall through the grates of a grill. The inventive device includes a plate member that has a pair of ends, a pair of sides that extend between the ends, and upper and lower surfaces. A plurality of apertures extend through the upper and lower surfaces of the plate member to permit heat and smoke to reach food placed on the plate member. The apertures are arranged in a grid-like fashion having a plurality of columns and rows. The columns extend between the ends of the plate member. The rows extend between the sides of the plate member.

1. Field of the Invention
The present invention relates to grill pans and more particularly pertains to a new food pan for placing on the grates of a barbecue grill for permitting grilling of small foods which would otherwise fall through the grates of a grill.
2. Description of the Prior Art
The use of grill pans is known in the prior art. More specifically, grill pans heretofore devised and utilized are known to consist basically of familiar, expected and obvious structural configurations, notwithstanding the myriad of designs encompassed by the crowded prior art which have been developed for the fulfillment of countless objectives and requirements.
Known prior art grill pans include U.S. Pat. No. 5,211,105; U.S. Pat. No. 5,237,914; U.S. Pat. No. Des. 246,751; U.S. Pat. No. 4,598,634; U.S. Pat. No. 5,447,097; and U.S. Pat. No. 5,355,779.
While these devices fulfill their respective, particular objectives and requirements, the aforementioned patents do not disclose a new food pan for placing on the grates of a barbecue grill. The inventive device includes a plate member that has a pair of ends, a pair of sides that extend between the ends, and upper and lower surfaces. A plurality of apertures extend through the upper and lower surfaces of the plate member to permit heat and smoke to reach food placed on the plate member. The apertures are arranged in a grid-like fashion having a plurality of columns and rows. The columns extend between the ends of the plate member. The rows extend between the sides of the plate member.
In these respects, the food pan for placing on the grates of a barbecue grill according to the present invention substantially departs from the conventional concepts and designs of the prior art, and in so doing provides an apparatus primarily developed for the purpose of permitting grilling of small foods which would otherwise fall through the grates of a grill.

Food pan for placing on the grates of a barbecue grill

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A first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, and an oxidation inhibitor film are successively deposited on a surface of a semiconductor substrate. After the oxidation inhibitor film and the first conductive layer are processed into strips, the assembly is thermally oxidized using the oxidation inhibitor film and the first conductive layer as a mask, thus forming thermal oxide films on first and second diffused layers. Then, a second conductive film is formed over the thermal oxide films and the first conductive layer, and then processed into a desired shape thereby to form an interconnection layer.

1. Field of the Invention
The present invention relates to a nonvolatile semiconductor memory device, and more particularly to a nonvolatile semiconductor memory device having MONOS (Metal Oxide Nitride Oxide Semiconductor) transistors and a method of manufacturing such a nonvolatile semiconductor memory device.
2. Description of the Related Art
MIS (Metal Insulator Semiconductor) transistors are classified broadly into two types, i.e., MNOS (Metal Nitride Oxide Semiconductor) transistors and FG (Floating Gate) transistors.
The MNOS transistors in the former category have gate insulating films as two layers for storing an information charge in an interface region that is formed in the boundary between the gate insulating films. The MNOS transistors include a structure referred to as MONOS which has a silicon oxide film formed on a silicon nitride film. Other known structures of MNOS transistors have combinations of various insulating films other than the silicon oxide film and the silicon nitride film.
The FG transistors in the latter class have two gate electrodes including a first gate electrode as a floating gate electrode for storing an information charge. According to the structure of the FG transistors, the first gate electrode is formed as a floating gate electrode on a silicon oxide film grown on a principal surface of a semiconductor substrate, and an interlayer insulating film comprising a silicon oxide film and a silicon nitride film is formed over the first gate electrode. A second gate electrode as a control gate electrode is formed over the interlayer insulating film.
Nonvolatile memories referred to as a flash memory generally use M(O)NOS transistors or FG transistors as memory elements. However, all presently mass-produced flash memories use FG transistors as memory elements. The FG transistors have, in principle, a poor ability to retain an information charge, and need a relatively thick silicon oxide film having a thickness of 9 nm or more as a tunnel oxide film between the principal surface of a semiconductor substrate and a floating gate electrode. Therefore, there is a limit to reducing a voltage for writing and erasing information.
On the other hand, the MNOS transistors allow a tunnel oxide film to be thinned out between the principal surface of a semiconductor substrate and a floating gate electrode, and hence can use a thin tunnel oxide film having a thickness of 3 nm or less. Therefore, it is possible in principle to reduce an operating voltage for the MNOS transistors, in particular, a voltage for writing and erasing information.
A memory element which uses an MNOS transistor writes and erases information as follows:
In the MNOS transistor, information is written by introducing an information charge (e.g., electrons) from the semiconductor substrate into the interface region, and information is erased by discharging an information charge from the interface region into the semiconductor substrate, directly through the tunnel of a silicon oxide film which is deposited to a thickness of about 2 nm on the principal surface of the semiconductor substrate. The interface region serves as a major trap for electrons. The state of the memory element where the information charge is retained therein corresponds to a logic "1" for stored information and the state of the memory element where the information charge is erased therefrom corresponds to a logic "0" for stored information. In recent years, various studies have intensively been carried out for making efforts to use M(O)NOS transistors capable of writing and erasing information at low voltages as memory elements for nonvolatile semiconductor memory devices such as flash memories.
Flash memories which use MONOS transistors as memory elements have a basic structure as disclosed in U.S. Pat. No. 5,768,192, for example. Recently, a NROM (Nitride Read Only Memory) fabrication method capable of greatly simplifying a nonvolatile memory fabrication process is disclosed in U.S. Pat. No. 5,966,603. The memory elements of the NROM have a basic structure which is the same as the basic structure disclosed in U.S. Pat. No. 5,768,192.
A conventional nonvolatile semiconductor memory device as the NROM will be described below with reference to FIGS. 1 through 5 of the accompanying drawings. Basic operation of the NROM will also be described below. FIG. 1 shows only interconnections of the NROM for the sake of brevity.
As shown in FIG. 1, NROM cells for storing information are constructed of first diffused layer 102, second diffused layer 103, and third diffused layer 104 which are formed in silicon substrate 101, and word lines 105, 106, 107 disposed on and extending perpendicularly to first through third diffused layers 102, 103, 104. First through third diffused layers 102, 103, 104 serve as respective bit lines.
An NROM fabrication process will be described below with reference to FIGS. 2A through 2D of the accompanying drawings. As shown in FIG. 2A, first insulating film 108 is formed on silicon substrate 101 by thermal oxidation, and then a silicon nitride film is grown on first insulating film 108 by CVD (Chemical Vapor Deposition), thereby forming second insulating film 109.
Thereafter, resist mask 110 having a plurality of rectangular openings (slits) is formed on second insulating film 109 by a known lithographic process. Those portions of second insulating film 109 which are aligned with the openings in resist mask 110 are then etched away. Then, as shown in FIG. 2B, an N-type impurity such as arsenic is introduced into silicon substrate 101 through the openings in resist mask 110 by way of ion implantation, followed by the removal of resist mask 110.
Then, the assembly is heated to activate the introduced impurity, producing first diffused layer 102, second diffused layer 103, and third diffused layer 104 in silicon substrate 101 near its surface.
Thereafter, as shown in FIG. 2C, the entire surface formed so far is thermally oxidized at a temperature of 750° C. or higher, producing insulative films 111 having a thickness of about 100 nm on first diffused layer 102, second diffused layer 103, and third diffused layer 104, respectively. At the same time, the surface of second insulating film 109 is also thermally oxidized into third insulating film 112. In this manner, there is produced an insulating film of ONO (Oxide Nitride Oxide) structure which is made up of third insulating film 112 (silicon oxide film), second insulating film 109 (silicon nitride film), and first insulating film 108 (silicon oxide film). Then, as shown in FIG. 2D, a tungsten polycide film having a thickness of about 200 nm, which will serve as a conductive film, is deposited on the entire surface formed so far, and then processed into a desired shape by a known lithographic process and a known dry etching process, thus forming word lines 105.
In this manner, bit lines comprising first diffused layer 102, second diffused layer 103, and third diffused layer 104 are formed on silicon substrate 101, thus producing regions for writing and erasing information which have the ONO structure made up of first insulating film 108, second insulating film 109, and third insulating film 112. As shown in FIG. 1, word lines 105, 106, 107 are provided to complete NROM cells.
Operation of MONOS transistors which serve as the NROM cells will be described below with reference to FIGS. 3A and 3B of the accompanying drawings.
For writing information in a MONOS transistor, as shown in FIG. 3A, for example, silicon substrate 101 and first diffused layer 102 are connected to ground potential, and a voltage VW=3 V is applied to second diffused layer 103 and a voltage VGW=5 V is applied to gate electrode 105a. When these voltages are applied, electron flow 113 (channel current) is generated from first diffused layer 102 as a source to second diffused layer 103 as a drain. Channel hot electrons (CHE) are generated in the vicinity of second diffused layer 103, and some of the generated channel hot electrons flow beyond the barrier of first insulating film 108 and are trapped by second insulating film 109, i.e., trap region 114 thereof. Thus, when information is written, electrons as an information charge is stored in a region of second insulating film 109 near second diffused layer 103.
For reading information from the MONOS transistor, as shown in FIG. 3B, second diffused layer 103 as a source is connected to ground potential, and a voltage VR=1.5 V is applied to first diffused layer 102 as a drain and a voltage VGR=3 V is applied to gate electrode 105a. Silicon substrate 101 is connected to ground potential.
When these voltages are applied, if the state of trap region 114 is a logic "1" with electrons stored therein, then no current flows between first diffused layer 102 and second diffused layer 103. However, if the state of trap region 114 is a logic "0" with no electrons stored therein, then a current flows between first diffused layer 102 and second diffused layer 103. The written information can be read by detecting the current.
For erasing the information written in the MONOS transistor, as shown in FIG. 3A, for example, silicon substrate 101 and first diffused layer 102 are connected to ground potential, and a voltage VE=5 V is applied to second diffused layer 103 and a voltage VGE=−5 V is applied to gate electrode 105a.
When these voltages are applied, holes generated by interband tunneling due to band bending are introduced into trap region 114 where an end of second diffused layer 103 overlaps gate electrode 105a, and coupled with the electrons as the information charge, thereby erasing the written information.
The NROM described above can be arranged in a two-bit/one-cell structure. Such a two-bit/one-cell structure will be described below with reference to FIG. 4 of the accompanying drawings.
As shown in FIG. 4, NROM bit lines comprising first diffused layer 102 and second diffused layer 103 and covered with insulating films 111 on the diffused layers are formed on silicon substrate 101. Regions for writing and erasing an information are formed between those NROM bit lines, the regions comprising first insulating film 108, second insulating film 109, and third insulating film 112 that make up an ONO structure. In the NROM, first bit trap region 114 and second bit trap region 115 are formed as two regions for writing and erasing information, i.e., electron trap regions. These regions operate basically in the same manner as with trap region 114 described above with reference to FIGS. 3A and 3B. The NROM can thus be constructed in a multivalued fashion, achieving the above two-bit/one-cell structure.
The inventor of the present invention has conducted various experiments on the above NROM, and found some problems with the NROM. These problems with the NROM will be described below with reference to FIG. 5.
The first problem is that when insulating film 111 is formed on the diffused layer by way of thermal oxidization, insulating film 111 grows laterally and goes into first insulating film 108 by increased distance ΔW1 as shown in FIG. 5. With increased distance ΔW1, the dimension between the diffused layers, e.g., between first diffused layer 102 and second diffused layer 103, is reduced, giving rise to a known short channel effect. The short channel effect restricts miniaturization of the cells of the NROM, posing limitations on efforts to make the NROM highly packed or integrated.
The second problem is that when the surface of second insulating film 109 which comprises a silicon nitride film is thermally oxidized into third insulating film 112, nitrogen atoms in second insulating film 109 find their way into first insulating film 108 and reach the surface of silicon substrate 101. The nitrogen or NH3 (generated by a reaction between the oxidizing gas and the nitrogen) which has entered first insulating film 108 thermally nitrides a portion of the silicon oxide film serving as first insulating film 108. The nitrogen or NH3 which has reached surface of silicon substrate 101 reacts with silicon substrate 101, producing foreign matter 116 of silicon nitride. The thermally nitrided portion of first insulating film 108 or generated foreign matter 116 adversely affects the ability to retain an information charge, i.e., greatly reduces the retention time of an information charge.

Nonvolatile semiconductor memory device and method of manufacturing same


A receive circuit for receiving a signal transmitted via an electric signal conductor. A first sampling circuit generates a first sample value that indicates whether the signal exceeds a first threshold level, and a second sampling circuit generates a second sample value that indicates whether the signal exceeds a second threshold level. A first select circuit receives the first and second sample values from the first and second sampling circuits and selects, according to a previously generated sample value, either the first sample value or the second sample value to be output as a selected sample value.

Electrical pulses transmitted on a band-limited signaling path disperse in time as they travel from source to destination. In systems in which data is transmitted as a sequence of level-encoded electrical pulses, such time-domain dispersion results in a blending of neighboring pulses; an effect known as dispersion-type inter-symbol interference (ISI). Dispersion-type ISI becomes more pronounced at faster signaling rates, ultimately degrading the signal quality to the point at which distinctions between originally transmitted signal levels may be lost.
FIG. 1 illustrates a prior-art signaling system having an equalizing output driver 109 and an equalizing receiver 103 to mitigate dispersion-type ISI resulting from signal transmission on a signaling path 102. The receiver 103 includes a sampling circuit 105 to generate digitized samples 106 of the incoming signal, a shift register 107 to store some number (N) of the most recently received samples, and an equalizer 112 to generate an equalization signal 114 based on samples stored in the shift register 107. Ideally, the equalization signal 114 represents the residual signal level on path 102 of the N prior received samples in the incoming signal so that, by subtracting the equalization signal 114 from the incoming signal in difference circuit 115, the dispersion-type ISI resulting from the prior transmissions is canceled. Because the prior decisions of the sampling circuit 105 are fed back to the sampling circuit input in the form of the equalization signal 114, the receiver 103 is commonly referred to as a decision feedback equalizer (DFE).
One major limitation of the DFE 103 is that the time delay in the overall feedback path from sampling circuit 105 to difference circuit 115 makes it difficult to generate the equalization feedback signal 114 in time to equalize the signal level of the immediately following data value if the least latent sample (i.e., the most recently captured sample 106) is included in the equalization feedback signal 114. Including the least latent sample in the equalization signal is particularly challenging in modern high-speed signaling systems in which incoming symbols are present on the signal path 102 for extremely brief intervals (e.g., less than a nanosecond for signal rates above one Gigabit per second). One solution to the least-latent sample problem is to omit one or more of the least-latent samples from contributing to generation of the decision-feedback equalization signal. Unfortunately, the least latent sample, being nearest in time to the incoming symbol, tends to be the largest contributor to dispersion-type ISI and therefore a primary objective of cancellation by the DFE. Consequently, in signaling systems in which the least-latent sample is omitted from contribution to decision-feedback equalization, transmit-side pre-emphasis is often used to decrease the dispersion-type ISI caused by the least-latent symbol. That is, when a given symbol is transmitted by the equalizing output driver 109, one or more previously transmitted symbols stored in shift register 113 (i.e., the least latent symbols relative to the outgoing symbol) are used to pre-shape the outgoing waveform to reduce the dispersion-type ISI observed at the receiver. Unfortunately, as can be seen in the raw and equalized pulse responses depicted in FIG. 2, forcing the least-latent sample, DN−1, to zero (or near zero) results in significant attenuation of the overall signal level, thereby reducing signaling margins and ultimately limiting the data rate of the signaling system.


An integrated analog to digital interface subsystem for imaging applications includes digital global and digital pixel by pixel offset correction and scaling. The integrated interface 2 includes 3 DAC's 2c1-2c3 that are used to do a rough offset cancellation on the three analog input signals (RGB) in the analog domain. A triple sample/hold circuit 2a samples the RGB signals simultaneously, multiplexes the data and passes the three signals on the ADC 2b sequentially (at about 3 times the data rate). The sample/hold circuit 2a has the capability to operate in fully differential as well as single ended input mode, and can perform correlated double sampling if needed. A high resolution ADC 2b converts the 3 multiplexed signals from simple/hold circuit 2a. A first digital offset correction circuit 2f restores the level of the RGB signals in the digital domain on a pixel by pixel basis. A first digital gain correction circuit 2g compensates for sensitivity variations of the RGB sensors in the digital domain on a pixel by pixel basis. A second digital offset correction circuit 2h restores the overall DC level of the RGB signals in the digital domain. A second digital gain correction circuit 2i compensates for overall sensitivity variations of the RGB sensors in the digital domain. A serial interface 2d is used to load the overall gain and offset coefficients.

In many consumer imaging applications like flat-bed and hand-held scanners, an image coming from one or more charge coupled device (CCD) sensors must be processed in order to compensate for the nonuniform illumination of the subject. In a typical application, three COD sensors are used (one for each of the primary colors red, green and blue (RGB)) to scan the subject on a line-by-line basis. Typically, the sensitivity of each of these sensors is different. Also, the sensitivity of each pixel within one of the line sensors may be different. Finally, because of constraints in mechanical construction and optics of the scanner bed itself, the illumination of the subject is not constant across a line.
To obtain a correct two-dimensional picture out of the CCD signals, two kinds of correction must be performed: global gain and offset correction to account for the difference in sensitivity between red, green and blue sensors, and pixel-by pixel correction to account for the difference in illumination (or sensitivity) within one line.
Prior attempts have utilized scaling or offset correction on individual pixels in the analog domain. This has proved ineffective primarily due to a lack of sensitive analog processing. Better methods are needed to improve resolution.
It is accordingly an object of this invention to provide an apparatus and method for improving resolution in CCD scanning.
Other objects and benefits of the invention will be apparent to those of ordinary skill in the art having the benefit of the description and drawings following herein.


A modular bioreactor is provided that includes an upper biochamber; a lower biochamber; and an intermediate biochamber that is positioned between the upper biochamber and the lower biochamber. Each biochamber of the bioreactor is in fluid communication with each other biochamber of the bioreactor and includes an interior wall, which defines a centrally-disposed cavity for each biochamber, and an inflow port and an outflow port that are in fluid communication with each centrally disposed cavity. Systems and methods for vascularizing a tissue construct are also provided.

There are a number of clinical situations where there is a need to re-establish or improve blood flow to a compromised or damaged tissue or organ. Often, the introduction of a new conduit vessel, either natural or artificial, upstream of an affected tissue or organ is sufficient to re-establish blood flow and relieve the symptoms exhibited by the affected tissue or organ. However, in situations where the replacement of an upstream, diseased conduit vessel does not resolve the condition, such as ischemia, it is necessary to regenerate the vascular supply within the tissue or organ. In these situations, the goal is thus to expand an existing vascular bed, especially the downstream vasculature, as a means to provide alternate and/or additional avenues for tissue or organ perfusion. In this regard, engineered tissue constructs offer promise to facilitate tissue healing and/or the replacement of compromised or damaged tissues and organs.
Current tissue engineering strategies, however, are hampered by the inability to pre-build a vasculature within the engineered construct. Indeed, the success of any tissue-engineered construct is highly dependent on the presence of a functional, invested vasculature within the construct as well as the ability to quickly perfuse the tissue construct once it is implanted into a subject. Any tissue construct greater in dimension than a few millimeters is too large for oxygen and nutrients to efficiently diffuse into the construct cells from the external environment and the surrounding host tissue. As such, the ability to grow and develop a vascular network within the construct is important for not only in vitro tissue construction, but also for in vivo vascular regeneration.
Existing strategies for building microvessels in vitro have involved a "de novo" approach in which freshly isolated or cultured vascular cells are placed within a scaffold, such as one formed by drilling channels into collagen sponges, by polymerizing collagen around metal or polymeric mandrels, or by utilizing polymer grafts. The vascular tubes that are formed by these microvascular constructs are capable of progressing into true microvessels and microvessel networks, but only when they are implanted into a living host. Alternative methods for building microvessels in vitro have employed isolated microvessel segments instead of cultured vascular cells, and have embedded these segments in a three-dimensional collagen matrix. In these later approaches, no further manipulation or addition of factors, such as growth factors or morphogens, is necessary to produce a new microvasculature network. However, the bioreactors that these three-dimensional constructs are produced within fail to provide sufficient perfusion paths through the constructs such that flow through the construct is maintained and the microvessels segments subsequently propagate into an organized and functional network of microvessels.
In any event, known methods and devices for building vessels in vitro are only capable of building microvessels within a preformed scaffold or are only capable of building a microvascular network that lacks organized perfusion paths within the construct itself. Furthermore, the known methods and devices for building vessels have only focused on building a collection of microvessels and have not sufficiently addressed how to build an organized network of microvessels such that a particular construct can then be implanted into an existing tissue and readily perfused, which is of great importance in treating compromised or damaged tissues or organs.

Bioreactors, systems, and methods for vascularizing tissue constructs

University of Louisville Research Foundation, Inc.


Methods and systems for operating a display device are provided. A first image is caused to be displayed on the display device. The first image is at least representative of a field of view from on-board an aircraft. A second image is rendered over the first image on the display device. A luminance of at least a portion of the second image is temporally modulated.

Modern vehicles, such as aircraft, often include head-up displays (HUDs) that project various symbols and information onto a transparent display, or image combiner, through which a user (e.g., the pilot) may simultaneously view the exterior. Traditional HUDs incorporate fixed image combiners located above the instrument panel on the windshield of the aircraft, or directly between the windshield and the pilot's head.
More recently, "head-mounted" HUDs have been increasingly developed that utilize image combiners, such as near-to-eye (NTE) displays, coupled to the helmet or headset of the pilot that moves with the changing position and angular orientation of the pilot's head. Although an advantage of head-mounted HUDs is that the information displayed may be visible to the pilot regardless of the position or orientation of his or her head, there may circumstances in which the pilot would prefer that the information on the NTE display not be visible, such as when the pilot is attempting to view the terrain with as little visible obstruction as possible, or when the pilot is viewing a display on the instrument panel (i.e., a "head-down" display).
In this sense, traditional HUDS utilizing fixed image combiners offer the advantage that the information displayed is typically only visible when the pilot's head is directly in front of the image combiner. That is, if the pilot leans to the side to look around the image combiner, the information on the HUD is no longer visible. However, such physical movement may make it more difficult to for the pilot to otherwise operate the aircraft.
In other implementations, representations of an outside field of view can be shown on head down displays (HDDs), along with overlaid imagery such as might be used on a traditional HUD.
Accordingly, it is desirable to provide a method and system for operating a display device, such as a traditional HUD, a NTE display, or a HDD displaying a representative field of view along with an overlay, in such a way as to improve the balance of the visibility of the information on the HUD and the image information over which the HUD image is overlaid, for example the outside view. Furthermore, other desirable features and characteristics of the present invention will become apparent from the subsequent detailed description of the invention and the appended claims, taken in conjunction with the accompanying drawings and this background of the invention.

Method and system for operating a display device


An LED lighting device includes an auxiliary power supply that supplies power to a control circuit of the LED lighting device that receives an input from a terminal of a light-emitting diode (LED) string of the lighting device that has a substantially lower voltage than the line voltage to which the lighting device is connected. The terminal may be within the LED string, or may be an end of the string. A linear regulator may be operated from the voltage drop across a number of the LEDs in the string so that the energy wasted by the auxiliary power supply is minimized. In other designs, the auxiliary power supply may be intermittently connected in series with the LED string only when needed. The intermittent connection can be used to forward bias a portion of the LED string when the voltage supplied to the LED string is low, increasing overall brightness.

1. Field of the Invention
The present invention relates generally to lighting device power sources such as those included within light-emitting diode (LED) lamps, and in particular to a control circuit for an LED lighting device power source that is powered from a LED string controlled by the control circuit.
2. Background of the Invention
Lighting control and power supply integrated circuits (ICs) are in common use in both electronic systems and in replaceable consumer lighting devices, e.g., light-emitting-diode (LED) and compact fluorescent lamp (CFL) replacements for traditional incandescent light bulbs.
In order to power LED lighting device from a typical AC power line voltage, the AC power line voltage must somehow be reduced to the relatively low voltage required by the LEDs in the lighting device. One manner in which the reduction is accomplished is to connect the LEDs in series to form a string, which is then supplied from a greater supply voltage. The greater supply voltage is generally provided from a switching power converter that controls the current provided to the LED string and also generally performs some voltage conversion to an intermediate voltage supplied to the LED string. The control circuits that operate the switching power supply typically also require a power supply voltage much less than the voltage of the AC line voltage. The power supply voltage is typically generated from a linear power supply. Generating the controller power supply voltage from the typical linear power supply wastes energy and adds some complexity to the circuit.
Therefore, it would be desirable to provide a LED lighting device that has improved energy efficiency and/or reduced complexity.

LED (light-emitting diode) string derived controller power supply


Disclosed is a compression device for applying compression to a body part of a user. The compression devices comprises a sleeve for substantially covering a portion of the body part of a user, wherein the sleeve has an outer surface, an inner surface, an upper edge, a lower edge and two lateral side edges. In the transverse direction from the first lateral side edge to the second lateral side edge the sleeve comprises a first lateral side region, a central region and a second lateral side region. At least the central region of the sleeve comprises a main material having elasticity in at least the transverse direction of the sleeve. A maximum elongation in the transverse direction is from 5% up to and including 30% under a load of 10 N per cm width and a difference quotient of tension in transverse direction from 20% elongation to 25% elongation equal to or greater that 0.6 N per cm width per percent elongation. The device further comprising a releasable closure system configured and arranged relative to the sleeve, such that, in use, upon closure of the closure system the sleeve is restrained and tightened about the body part of the user.

Compression therapy is generally prescribed to support an insufficient venous or lymphatic system in returning blood or lymph to the heart. Accordingly, compression is generally considered to be the standard treatment for use in the treatment of oedema and other venous and lymphatic disorders e.g. of the lower limbs venous leg ulcers and other clinical conditions, such as lymphoedema. The positive effects of compression therapy on venous lymph return, as well as on the healing of chronic venous (leg) ulcers, are well documented in the medical literature.
Compression bandages are one of the common compression systems used for compression therapy. The use of such compression bandages generally involves the application of a multilayer compression bandage. One concept behind a number of such multi-layer bandaging systems is the use of a combination of different types of bandage layers in order to apply pressure in layers (giving an accumulation of pressure) and to provide sustained compression together with rigidity. Commercially available compression bandages include bandages marketed under the trade designations "3M COBAN 2 LAYER COMPRESSION SYSTEM" and "3M COBAN 2 LITE COMPRESSION SYSTEM". Typically to assure proper and effective compression bandaging, it is normally necessary for a medical professional to apply the bandages. In consideration of the fact in the start of treatment of lymphoedema or in other compression therapies where oedema is present, compression bandages typically need to be replaced frequently due to changes in pressure (e.g. reduction of pressure) and/or in uniformity of pressure of the compression bandage as the amount of oedema is reduced during compression therapy, the need of having a medical professional change and reapply the compression bandage to ensure the desired pressure profile for continuing compression treatment can be limiting.
Compression stockings are often applied by users themselves. However, they often do not provide the desired therapeutic compressive pressure or are alternatively very hard to put on. Moreover, compression stockings need to be quite elastic showing high stretch so that one can pull them on and off. Such stockings retain this high stretch while being worn on the limb, and accordingly their effectiveness in terms of compression therapy is rather limited.
Other compression systems have been marketed and/or proposed. For example, U.S. Pat. No. 6,152,893 (Pigg et al; SMITH& NEPHEW) discloses a compression device for applying a predetermined compression to a limb comprising a pliable non-extensible sheet to be wrapped around a limb, where said sheet is provided with a plurality of cooperating first and second fastening parts each along opposing edges of the sheet, thereby to secure the device to the limb, wherein said first fastening part is provided with a plurality of first and second related indicia that visually indicate the relative movement of said first fastening part relative to said second fastening part between the application of zero tension as indicated by said first indicia and the application of a predetermined optimal degree of tension as indicated by said second indicia on fastening said first and second parts to provide compression. WO 01/72250 (Bennet et al; NEOPRESS) discloses an elastic compression support for supporting a wound dressing around the lower leg and foot of a patient, the support comprising a panel and a line of fastenings for drawing together two long edges of the panel where the fastenings comprise mutually aligned pairs of tapes secured to or tabs integral with the panel along its edges arranged so that drawing the tape or tabs apart in mutually opposite directions causes the panel to be tightened in compression around the limb, wherein the panel is formed from three pieces including a central piece, that lies at the back of the calf and under the foot, made of a long-stretch microperforated neoprene and two side pieces, that form the two long edges of panel and lie along the shin and the front of the leg, made of short-stretch microperforated neoprene. WO 97/46181 (Shaw et al; CIRCAID MEDICAL PRODUCTS) discloses a therapeutic compression garment including a plurality of pairs of body or limb encircle bands integrally connected to a central wrap around region and extending outwardly in opposite direction from the both sides of the central region to encompass the body part. WO 2011/066237 (Lipshaw et al; CIRCAID MEDICAL PRODUCTS) discloses a therapeutic compression garment, including: a body portion; and a spine portion, wherein the spine portion is releasably attached along a spine curve onto the body portion such that the spine portion is positionable at different locations on the body portion and wherein there are bands extending from either the body portion and/or the spine portion, the bands further securing the body and spine portions together when the body and spine portions are wrapped around a body limb. A corresponding garment is marketed by CIRCAID under the trade designation JUXTA-CURES which is formed from the body and spine portion between attached over a spine curve and includes four limb encircling bands (two per side, each including hook & loop type fasteners) integrally connected to both the body portion and the spine portion, the bands being located in staggered positions along the two opposite sides garment and extending outwardly in opposite directions from the both sides of the garment to encompass the body part. US 2005/0209545 (Farrow et al; FARROW MEDICAL) discloses an apparatus for applying pressure to a body part comprising multiple interconnectable bands of compressible or non-compressible material and that the bands can be overlapped and connected to either via an spine or connective means lengthwise centrally in each band. A corresponding system is marketed by FARROW under the trade designation FARROWWRAP.


In a switched-capacitor input sampling structure, a resistor connected in series with the input structure, but after the output of the input switch limits the noise bandwidth of the input structure. The selected placement of the resistor does not appreciably limit the slewing or settling time of downstream circuit elements, resulting in a low noise bandwidth, high speed system.

1. Field of the Invention
The invention relates to input structures for switched-capacitor circuits. More particularly, the invention relates to switched-capacitor input circuits for limiting input noise. Yet more particularly, the invention relates to input structures for switched-capacitor circuits which limit input noise while not appreciably distorting the sampled input signal and without degrading the settling time of circuits downstream of the input structure.
2. Related Art
Representative conventional switched-capacitor input structures are illustrated schematically in FIGS. 1 and 2. In both of these conventional switched-capacitor input structures, an input voltage V.sub.IN is sampled onto. An input capacitor C.sub.IN through switch S.sub.IN during a first input phase. During a second input phase, switch S.sub.IN changes state to disconnect the input voltage V.sub.IN from capacitor C.sub.IN. Either the charge or the voltage accumulated on capacitor C.sub.IN is then transferred from the input capacitor C.sub.IN to a next stage of circuitry (not shown). In each of the circuits of FIGS. 1 and 2, the switch S.sub.SAMPLE also switches state when the input structure switches between the first phase, referred to hereinafter as the sampling phase, and the second phase, referred to hereinafter as the hold phase. During the sample phase, switch S.sub.SAMPLE is in a conductive state, while during hold phase, switch S.sub.SAMPLE is in a substantially non-conductive state. Another switch S.sub.H connects the input side of C.sub.IN to a bias voltage V.sub.H during hold phase and is substantially non-conducting during sample phase. Switches S.sub.IN, S.sub.H and S.sub.SAMPLE are controlled by a sampling clock (not shown). The clock signal may be connected to gate terminals of MOS transistors forming the switches.
In the circuit of FIG. 1 the voltage V.sub.IN is sampled with respect to a bias voltage V.sub.B. In the circuit of FIG. 2 V.sub.IN is sampled with respect to the offset voltage of op amp AMP, which will facilitate offset compensation of op amp AMP. When S.sub.SAMPLE is in a substantially conducting state, i.e., sample phase, op amp AMP is connected in a unity gain configuration. Thus, any input offset voltage is subtracted from the voltage transferred to capacitor C.sub.IN. In this configuration, the input offset error voltage of op amp AMP is compensated because the inverting input of op amp AMP remains connected to input capacitor C.sub.IN when switch S.sub.SAMPLE is in a substantially non-conducting state, i.e., during hold phase. The input offset voltage previously subtracted from the voltage transferred is thus added back in during hold phase, fully compensating for the input offset voltage.
One important characteristic of these input structures is bandwidth. Components downstream of the input structures are usually required to have extremely wide bandwidths, in order to slew and settle quickly. For example, in the sample phase, sample and hold circuits or sigma-delta modulators are required to accurately track variations in the input signal. In addition, in hold phase, these circuits are required to settle rapidly. The input structure illustrated in FIG. 1 has a dominant pole at ##EQU1## The resistance R.sub.SWITCH is the ON resistance of switch S.sub.IN, while the resistance R.sub.SAMPLE is the ON resistance of switch S.sub.SAMPLE. Capacitance C.sub.S is the value of capacitor C.sub.IN. The dominant pole of the circuit of FIG. 2 occurs at ##EQU2## In the definition of .tau..sub.B, R.sub.SWITCH and C.sub.S are defined as above, while G.sub.M is the transconductance of op amp AMP. As an example, for a switched capacitor input on a 12-bit analog-to-digital (A/D) converter sampling at a 10MHz rate, typical values achievable for the various components and typical target dominant pole frequencies are given in the table below.
TABLE 1 ______________________________________ Value ______________________________________ R.sub.SWITCH 10-50 .OMEGA. R.sub.SAMPLE 100-500 .OMEGA. C.sub.S 1-10 pF G.sub.M 1-10 mA/V .omega..sub.A 20-400 MHz .omega..sub.B 20-400 MHz ______________________________________
In these prior art circuits, if the input voltage is noisy, then that noise is sampled by the input capacitor. Given a wide bandwidth system, the input noise is not significantly limited. Systems for certain applications require wide bandwidth for good distortion performance in the sample phase. In addition, systems typically are designed to have a bandwidth wide enough so that the system settles quickly enough during hold phase to suit a particular application. As a result, input noise may be sampled into the system, if not in some way limited or prevented from being present at the input. Sources of input noise can include thermal noise of a source circuit that drives the input voltage V.sub.IN or noise from unrelated circuits coupling into the input voltage V.sub.IN.
In prior art circuits such as FIGS. 1 and 2, there is a tradeoff between noise and distortion depending on the value of R.sub.SWITCH. When the resistance R.sub.SWITCH of switch S.sub.IN is large, the bandwidth of the system is small and the system may not settle quickly enough. When R.sub.SWITCH is small, the bandwidth of the system is large, and noise coupling may be introduced from the input voltage. The nominal value of R.sub.SWITCH is a design parameter set by the designer, but the actual value of R.sub.SWITCH during circuit operation varies substantially with the input voltage, V.sub.IN, producing distortion due to the input transfer function being non-linear. Typical prior art systems operating on an input signal having a spectral bandwidth of between 20 and 40 megahertz may have a bandwidth of approximately 400 megahertz to accommodate settling time requirements. However, the noise bandwidth of a system designed to the parameters described above is unacceptably large.
FIG. 3 schematically illustrates an example of a differential prior-art switched-capacitor input structure which samples an input voltage onto input capacitors C.sub.INP and C.sub.INM during the sample phase. The input voltage is impressed across the input terminals V.sub.INP and V.sub.INM. The embodiment of FIG. 3 includes a differential sample switch S.sub.SAMPLE which connect capacitors C.sub.INP and C.sub.INM together during the sample phase and also includes two additional switches, S.sub.SAMPLEP and S.sub.SAMPLEM, which connect capacitors C.sub.INP and C.sub.INM to bias voltage V.sub.B during the sample phase. Two switches, S.sub.HP and S.sub.HM, are turned on during the hold phase to charge the input terminals of capacitors C.sub.INP and C.sub.HM to V.sub.HP and V.sub.HM. In some implementations of this prior-art circuit, V.sub.HP and V.sub.HM may be at substantially the same potential. FIG. 4 illustrates another prior-art switched-capacitor input structure which is similar to the embodiment of FIG. 3. The embodiment of FIG. 4 differs from that of FIG. 3 in that a single switch, S.sub.H, is used in place of the two switches, S.sub.HP and S.sub.HM, of the embodiment of FIG. 3. This single switch, S.sub.H, forces the input terminals of capacitors C.sub.INP and C.sub.INM to the same potential during hold phase by connecting them together.
FIG. 5 illustrates another prior-art differential switched-capacitor input structure. The circuit of FIG. 5 includes sample switches S.sub.SAMPLEP and S.sub.SAMPLEM which connect the amplifier AMP in unity-gain configuration during the sample phase in order to charge the input capacitors with respect to the offset voltage of the amplifier AMP. This allows offset compensation of the amplifier. Two switches, S.sub.HP and S.sub.HM, are turned on during the hold phase to charge the input terminals of capacitors C.sub.INP and C.sub.INM to V.sub.HP and V.sub.HM. In some implementations of this prior-art circuit, V.sub.HP and V.sub.HM may be at substantially the same potential. FIG. 6 illustrates another differential embodiment of a prior-art switched-capacitor input structure which is similar to the embodiment of FIG. 5. The embodiment of FIG. 6 differs from that of FIG. 5 in that a single switch, S.sub.H, is used in place of the two switches, S.sub.HP and S.sub.HM, of the embodiment of FIG. 5. This single switch, S.sub.H, forces the input terminals of capacitors C.sub.INP and C.sub.INM to the same potential during hold phase by connecting them together.
FIGS. 7 and 8 schematically show prior art solutions to the noise coupling problems associated with FIG. 1. In FIG. 7, resistor R.sub.EXT is added between the input voltage source and switch S.sub.IN Resistor R.sub.EXT is much larger than the resistance of switch S.sub.IN and therefore dominates the input resistance. Thus, the external resistance dominates the pole .omega..sub.A. However, non-linearities continue to plague the prior art systems.
The solution of FIG. 8 adds an external resistor R.sub.EXT and external capacitor C.sub.EXT. By setting the values of the external capacitor and external resistor appropriately, the location of the pole .omega..sub.B can be set to suit a particular application. Here also, non-linearity plagues the system.
The drawbacks associated with the solutions of FIGS. 7 and 8 relate to the fact that when the external resistance is added upstream of the input switch S.sub.IN the non-linear parasitic capacitances of the input switch become problematic. In other words, the non-linear parasitic capacitances of the input switch cause distortion. Typically the input switch S.sub.IN is implemented as an MOS transmission gate switch. FIG. 9 schematically represents the input structure, showing some of the parasitic capacitances of a MOS-implemented transmission gate switch S.sub.IN that cause non-linear behavior and distortion with the addition of the external resistance.

Low-distortion technique to bandlimit a switched-capacitor sampling circuit


A polarization glasses type stereoscopic image display displaying a stereoscopic image on a display surface includes a thin film transistor array substrate, a color filter array substrate having a plurality of black matrix patterns formed on a first plane facing the thin film transistor array substrate, a plurality of black stripe patterns that are aligned correspondingly to the black matrix patterns on a second plane of the color filter array substrate opposite to the first plane, and a patterned retarder disposed over the second plane of the color filter array substrate. The overall vertical pitch of the patterned retarder is less than the overall vertical pitch of a pixel array formed on the display surface.

1. Field of the Invention
Embodiments of the disclosure relate to a stereoscopic image display, and more particularly, to a polarization glasses type stereoscopic image display capable of improving a vertical viewing angle of a stereoscopic image.
2. Discussion of the Related Art
A stereoscopic image display displays a stereoscopic image by using a stereoscopic technique or an autostereoscopic technique.
The stereoscopic technique, which uses a binocular parallax image between left and right eyes of a user and has a high stereoscopic effect, includes a glass method and a non-glass method which have been put to practical use. In the glass method, the binocular parallax image is displayed on a direct view-based display device or a projector by changing a polarization direction or in a time division manner, and polarization glasses or liquid crystal shutter glasses are used to implement stereoscopic images. In the non-glass method, generally, an optical plate such as a parallax barrier or the like for separating an optical axis of the binocular parallax image is provided at the front surface or rear surface of a display screen.
FIG. 1 is a view showing a related art polarization glasses type stereoscopic image display.
Referring to FIG. 1, the glasses type stereoscopic image display 1 comprises a display panel and a patterned retarder 17 bonded to the display panel.
The display panel comprises a thin film transistor array substrate 10, a color filter substrate 12 comprising color filters 13 and a black matrix 14, and a liquid crystal layer 15 formed between the thin film transistor array substrate 10 and the color filter substrate 12, a second polarizing plate 16b attached to the bottom of the thin film transistor array substrate 10, and a first polarizing plate 16a attached to the top of the color filter substrate 12.
The patterned retarder 17 comprises a first retarder pattern for selectively transmitting only first polarized light and a second retarder pattern for selectively transmitting only second polarized light, and is attached on the first polarizing plate 16a. The first retarder pattern and the second retarder pattern are formed alternately line by line, and a surface-treated protective film 18 may be attached on the patterned retarder 17.
The stereoscopic image display 1 of this type alternately displays a left image and a right image and switches polarization characteristics incident to polarization glasses via the patterned retarder 17. Thereby, the glasses type can implement stereoscopic images by spatially dividing left images and right images.
The polarization glasses type stereoscopic image display may suffer 3D crosstalk depending on a viewing position when displaying a stereoscopic image. 3D crosstalk occurs when a left-eye image and a right-eye image are seen overlapping each other by a single eye (left-eye or right-eye). When viewing the display panel from the front, the left-eye image is transmitted and seen through the corresponding first retarder pattern alone, and the right-eye image is transmitted and seen through the corresponding second retarder pattern alone, whereby no 3D crosstalk is perceived. However, when viewing the display panel from a vertical direction, the left-eye image may be transmitted through the first retarder pattern and the second retarder pattern corresponding to the right-eye image and seen mixed with the right-eye image, and the right-eye image may be transmitted through the second retarder pattern and the first retarder pattern corresponding to the left-eye image and seen mixed with the left-eye image, whereby 3D crosstalk is perceived.
In general, a vertical viewing angle on a stereoscopic image display is defined as the sum of upper and lower viewing angles at which 3D crosstalk is perceived with a probability of 10% or less. The vertical viewing angle is closely related to the width of black matrices, the distance between the color filters and the patterned retarder, and so on. By increasing the width of black matrices, 3D crosstalk may be improved and vertical viewing angle may be widened, but aperture ratio and luminance may be lowered.
The related art polarization glasses type stereoscopic image display has attained a desired vertical viewing angle by increasing the width of black matrices in spite of low aperture ratio and luminance.

Polarization glasses type stereoscopic image display


A miniature electro-optic voltage sensor system capable of accurate operation at high voltages. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

1. Field of the Invention
The present invention pertains generally to the field of voltage sensors and more particularly to a voltage sensor system which utilizes the Pockels electro-optic effect to measure voltage.
2. Background Art
High-accuracy measurement of high voltage has traditionally been accomplished using iron-core ferro-magnetic potential transformers. These devices have substantially limited dynamic range, bandwidth, linearity, and electrical isolation. During electrical fault conditions these transformers can conduct dangerous levels of fault energy to downstream instrumentation and personnel, posing an additional liability.
A variety of optic sensors for measuring voltage have been developed in attempts to offer the power industry an alternative to the conventional transformer technology. Generally, these voltage sensor systems require that direct electrical contact be made with the energized conductor. This contact is made necessary by the use of a voltage divider which is utilized to connect the sensing element with the energized conductor on which a measurement is to be made. Direct electrical contact with the conductor may alter or interrupt the operation of the power system by presenting a burden or load.
In addition to the disadvantages associated with direct electrical contact with the energized conductor, prior art voltage sensor systems are typically bulky, particularly in extremely high voltage applications. This is true because the size of the voltage divider required is proportional to the voltage being measured. The size of such systems can make them difficult and expensive to install and house in substations.
Many prior art sensors are based upon the electrostrictive principle which utilize interferometric modulation principles. Unfortunately, interferometric modulation is extremely temperature sensitive. This temperature sensitivity requires controlled conditions in order to obtain accurate voltage measurements. The requirement of controlled conditions limits the usefulness of such systems and makes them unsuited for outdoor or uncontrolled applications. In addition, interferometric modulation requires a highly coherent source of electromagnetic radiation, which is relatively expensive.
Open-air E-field based sensors have also been developed, but lack accuracy when used for measuring voltage because the open-air E-field used varies with many noisy parameters including ambient dielectric constant, adjacent conductor voltages, moving conductive structures such as passing vehicles, and other electromagnetic noise contributions.
Systems which utilize mechanical modulation of the optical reflection within an optic fiber have also been developed. Among other drawbacks, the reliance of such systems on moving parts is a significant deterrent to widespread use.
It would therefore be an advantage in the art to provide a system which does not require direct electrical contact with the energized conductor, is compact, operates in a variety of temperatures and conditions, is reliable, and is cost effective.

Electro-optic voltage sensor for sensing voltage in an E-field

Lockheed Martin Idaho Technologies Company


A semiconductor device includes at least one memory cell and at least one logic cell. The at least one logic cell is disposed next to the at least one memory cell and includes a plurality of fins. The plurality of fins are separated into a plurality of fin groups for forming transistors. A distance between two adjacent groups of the plurality of fin groups is different from a distance between another two adjacent groups of the plurality of fin groups. A method is also disclosed herein.

Static random access memory (SRAM), including bit cells and peripheral cells, are frequently implemented by a semiconductor device. One way to represent the semiconductor device is with a plan view diagram referred to as a layout diagram with grids. The layout diagram is generated in a context of design rules. For example, for the peripheral cells in the layout diagram, an arrangement of each of fin-shaped active regions is restricted to a corresponding cell height, and it also constrains a density of active regions and an area scaling of the layout diagram.

Semiconductor device including memory cell and fin arrangements

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.


An image sensor array that has a buffer amplifier, having a capacitor which receives photogenerated energy from a photodetector, and stores the photo generated energy in a capacitor of the buffer amplifier. A reset across the buffer amplifier is applied at a time which is sufficient to allow the amplifier to settle transiently prior to applying the clamp voltage. There is also a source follower that is enabled to operate at a time just before snapshot operation, and then turned off when the snapshot is over, to save on power.

A typical capacitance transimpedance amplifier (CTIA)-based Infra-Red (IR) Read out Integrated Circuit (ROIC) pixel circuit 100 is shown in FIG. 1. The circuit 100 is connected to a photodetector, e.g. an infrared photodetector 99 as shown in FIG. 1. The circuit maintains a fixed reverse-bias on the IR Photodetector 99, while integrating the photocurrent from the photodetector 99.
A buffer amplifier 110 includes a feedback loop 106. The current from the infrared detector is integrated by the buffer amplifier. The feedback loop 106 includes a capacitor 105 that holds the current that has been integrated. The output 115 of the buffer amp is thus a voltage representative of the amount of current that has been integrated. This voltage is buffered by a source follower 120 that forms the pixel output.
An integration node is formed at the output of the buffer amplifier 110. In order to maintain consistency between pixels, the CTIA integration node voltage must be reset to a known value between integrations. This is done by shorting the input and output of the CTIA Opamp together using a controllable switch 125. During this reset phase, the Opamp then drives the output (integration node) to the same voltage that is on the positive input of the Opamp.
Typical imagers only reset one row of the pixel array at a time, even though the net integration time is the same for all the rows. This results in a time delta between start and end of integration from row-to-row. The end effect of this temporal delta is distortion of moving scenes. Certain applications need to maintain the image integrity of moving scenes.
A Snapshot or Frame Shutter operation operates to start and end integration at the same time for all the Pixels in the array.
Previous solutions have implemented a correlated double sampling operation from the downstream circuitry by performing two successive readouts from the Pixel.

CTIA in-pixel correlated double sampling with snapshot operation for IR readout integrated circuits


A child restraint system for transporting a child within an automotive vehicle includes a weight sensor for determining the weight of the child and compares the child's weight to a recommended weight range. The weight sensor is disposed within a cushion that lines a shell and provides an electrical signal to a control unit. The control unit processes the electrical signal and provides an alert signal when the weight is not within the recommended range. Also, the child restraint system may include a second sensor for sensing a condition that depends upon the child's weight such as directional orientation or angular orientation of the child restraint system, or location or tension of a vehicle seat belt or tether that secures the child restraint system within the vehicle, or the location or tension of a harness for restraining the child occupant within the child restraint system.

A child restraint system, also referred to as a child car seat, is used for safely transporting a child within an automotive vehicle, so as to minimize the risk of injury to the child in the event of an accident. The design of the child restraint system is based upon the size of the child. A typical rear-facing infant seat is designed for an infant up to about 11 kilograms (about 25 pounds) and comprises a removable carrier in which the infant is placed and which couples to a base that is securely installed in the vehicle. As the child grows, a forward-facing seat is recommended and is typically designed for a child between about 9 kilograms (about 20 pounds) and about 20 kilograms (about 45 pounds). A typical car seat for older children is a belt-positioning booster seat and may be designed for a child between about 18 kilograms (about 40 pounds) and about 45 kilograms (about 100 pounds). Even for a child within the recommended weight range for the particular design, adjustments may be necessary to features of the seat or to the installation of the seat into the vehicle based upon the weight of the child in order to optimize the safety of the child. One problem is that, as the child grows, the parent may not be aware that the child now exceeds the recommended range for the seat, or that the features or installation needs adjustment to accommodate the larger child.
Therefore, a need exists for a child restraint system that includes a sensor for determining the weight of a child occupant. The information about the child weight may then be correlated with information about the design and installation to alert the parent that child is not within the recommended weight range for the design, or that adjustments are recommended to the features or the installation of the child restraint system.

Child restraint system comprising weight sensor