A semiconductor package inspection apparatus comprises single photographic device disposed above the semiconductor package, and comprises light splitter for splitting light in different directions according to three different wavelength ranges in the light; and three image pickup units for separately photographing light of the three wavelength ranges which has been split by the light splitter; lighting device comprising first lighting for inspecting leads of the semiconductor package; second lighting for inspecting marks printed on top face of the semiconductor package; and third lighting for inspecting defects of the semiconductor package, the first, second and third lightings being disposed at locations different from each other, and having wavelength ranges into which the light has been split by the light splitter, and inspection device for simultaneously operating the first, second and third lightings of the lighting device and the three image pickup units of the photographic device to inspect leads of the semiconductor package, marks printed on top face of the semiconductor package and defects in the semiconductor package based on the photographic data from the three image pickup units.

1. Field of the Invention
This invention relates to a semiconductor package inspection apparatus for inspecting semiconductor packages of various types, such as PGA (pin grid array), QFP (quad flat package), QFJ (quad flat J-leaded package), SOP (small outline package), SOJ (small outline J-leaded package), DIP (dual inline package) and BGA (ball grid array), with regard to various items for inspection, such as mislocation, pitch, coplanarity and tip misalignment of the terminals; missing, blurred and mislocated characters in marks printed on semiconductor package surfaces; and internal cavities in semiconductor package surfaces.
2. Description of the Related Art
Items for inspection of semiconductor packages of types such as PGA, QFP, QFJ, SOP, SOJ, DIP and BGA include:
(1) inspection for location, pitch, coplanarity and tip alignment of terminals PA1 (2) inspection for missing, blurred or mislocated characters in marks (such as manufacturing number and manufacturer name) printed on semiconductor package surfaces PA1 (3) inspection for defects such as internal cavities formed in semiconductor package surfaces.
Nowadays, methods which employ photographic devices such as CCD cameras are predominantly used for these inspections.
In conducting such inspections using photographic data from cameras, lighting conditions are crucial, and there is a proper lighting location for each inspection item. Depending on the inspection items, a single camera may suffice in some inspection items, while in other inspection items a plurality of cameras must be disposed in different locations.
Thus, since there is a proper lighting location for each inspection item, there are plural proper lighting locations for all inspection items. If all lights at plural lighting locations are lit simultaneously, lighting cannot be conducted in an optimal manner for photographing each inspection item, regardless of whether a single camera is used or a plurality of cameras is used for photographing.
Therefore, the practice has been that, when conducting a terminal inspection, only the lighting and camera corresponding to the terminal inspection are operated; when conducting a mark inspection, only the lighting and camera corresponding to the mark inspection are operated; and when conducting a defect inspection for internal cavities and the like, only the lighting and camera corresponding to this inspection are operated.
In the conventional art, the lighting and cameras for each inspection item cannot be operated simultaneously, and have therefore been operated sequentially one inspection item after another. Thus, photography has been time consuming, making it impossible to perform efficient semiconductor package inspections.

Semiconductor package inspection apparatus


A fuel dispensing installation that includes first and second fuel tanks containing first and second fuels of different octane levels. The tanks are provided with first and second octane level sensors mounted in the first and second fuel tanks respectively for measuring fuel octane levels and generating output signals indicative of the octane levels of the first and second fuels. Conduits from the first and second tanks transport the fuel to one or more fuel dispensers. The fuel dispensers include a blending system for blending the first and second fuels to form at least one blended fuel having an intermediate octane. A site controller in electronic communication with the blending system receives the output signals and controls the blending system to permit the dispensing of one or more blended fuels based on the measured octane levels of the first and second fuels.

Numerous systems have been disclosed for blending two or more fluids during the dispensing of a fluid product. Such systems are used quite often in a service station environment where it is desired to dispense a plurality of different grades or octane levels of gasoline products by blending a high octane level product with a low octane level product to create one or more mid-level octane products. Blending systems offer the potential for savings stemming from reduced storage capacity requirements both at the service station and the bulk plant level. One example of such a system is that disclosed in U.S. Pat. No. 4,876,653 ("the '653 patent") assigned to Gilbarco, Inc., the contents of which are incorporated herein by reference. The '653 patent discloses a system for blending low and high octane gasoline with the fuel flow rate in each of two fuel flow paths being under individual closed loop control. The system includes an algorithm for comparing the ratio of the actual accumulated volumes of the low octane to the high octane fuel relative to a statistically determined ratio of the ideal volume of the low to high octane fuel for the total accumulated volume of the sum of the volumes of the fuels at a given time. The system provides a very exact blend relative to a pre-selected blend ratio.
Each of the previous systems in this area, including that disclosed in the '653 patent, are based on an important underlying assumption: that the octane levels in the low and high octane fuel storage tanks are correct. Typically, it is assumed that the low octane blend component has an octane of about 86 to 87 and that the high octane component has an octane level of about 92 to 93. Given the octane variability inherent in he refining process, many oil companies add 1/2 to 1 point of octane to each of the lending components to ensure that each level of blended product meets or exceeds the posted octane rating. This extra octane is referred to as "octane give away" and can be quite costly. Thus, it would be desirable to eliminate the need to boost octane levels of the blending components to ensure that a proper blended product is provided to the customer.
Another potential problem with current octane blending systems is that they have no provision to detect the delivery of an incorrect octane level product in either the high or low level octane blending component storage tanks. That is, if a low octane product is dropped into both the low octane storage tank and to the high octane storage tank, it may not be possible to deliver a proper octane blend under any circumstances. Similarly, if a high octane product is delivered into the low octane product storage tank the station operator will lose an inordinate amount of money due to the "octane give away" occurring for both the blended and the low octane level products. Even if only a partial fuel delivery is dropped into the wrong tank, it may be impossible for a correctly blended product to be created. Thus, it would be desirable to provide a system for monitoring octane levels in blending component storage tanks to alert operators that blending component octane levels are outside desired limits and thus cannot be blended to meet posted octane levels.
Previous blending systems for service station use have not incorporated the actual octane levels of the blend components into the blend control process given the lack of acceptable octane sensors and the acceptance of the "octane give away" practice described above. In the past octane testing and sensing devices have required a great deal of time (in the context of a retail service station transaction) to perform using expensive laboratory equipment. Available octane sensors have required up to about four minutes to determine an octane level. The advent of real time octane sensors permits octane level to be included as a control parameter for octane blending in a service station setting. An example of such a sensor is that disclosed in Clarke et al., U.S. Pat. No. 5,225,679 the content of which is incorporated herein by reference. This sensor monitors hydrocarbon-based fuel properties using a mid-IR light source to illuminate fuel in a side stream flow provided for octane monitoring. The light passing through the fuel is received by a narrow bandwidth detector. The molecules of the fuel components are excited by the mid-IR light, and the amount of absorption exhibited by these excited molecules is detected and used to identify the presence of and to quantify the volume percent of the fuel components in solution. This information maybe used to determine known properties of the fuel solution to include octane levels.
There exists a need then for a dispenser-based and/or fueling system-base blending system that takes into account the actual and assumed octane levels of the blending components. Such a system would take advantage of modem octane sensors that provide much improved reaction times compared to prior art octane sensors.

Fuel blending using blend component octane levels


An sealing gasket is shown for use in forming joints of plastic pipe. The gasket has a bulbous region which is bisected by a planar region which forms a pair of oppositely extending wing-like flaps. These features of the gasket allow it to be more reliably seated on the working mandrel used to bell a female, thermoplastic pipe end. The wing-like flap portions of the gasket form wiper surfaces for a subsequently installed male, spigot pipe end as the joint is formed.

1. Field of the Invention
The present invention relates generally to sealing systems for thermoplastic pipes and, more specifically, to an improved pipe gasket and to an improved belling process for installing a gasket in a socket end of a thermoplastic pipe.
2. Description of the Prior Art
Pipes formed from thermoplastic materials including polyethylene and PVC are used in a variety of industries. In forming a joint between sections of pipe, the spigot or male pipe end is inserted within the female or socket pipe end. An annular, elastomeric ring or gasket is typically seated within a groove formed in the socket end of the thermoplastic pipe. As the spigot is inserted within the socket, the gasket provides the major seal capacity for the joint. It is critical, during the installation process, that the gasket not be able to twist or flip since a displaced or dislocated gasket will adversely affect the ultimate sealing capacity of the joint.
In the early 1970's, a new technology was developed by Rieber & Son of Bergen, Norway, referred to in the industry as the "Rieber Joint." The Rieber system employed a combined mould element and sealing ring for sealing a joint between the socket end and spigot end of two cooperating pipes formed from thermoplastic materials. In the Rieber process, the elastomeric gasket was inserted within an internal groove in the socket end of the female pipe as the female or belling end was simultaneously being formed. The provision of a prestressed and anchored elastomeric gasket during the belling process at the pipe factory provided an improved socket end for a pipe joint with a sealing gasket which would not twist or flip or otherwise allow impurities to enter the sealing zones of the joint. These features increased the reliability of the joint and decreased the risk of leaks or possible failure due to abrasion or other factors. The Rieber process is described in the following issued U.S. Pat. Nos. 4,120,521; 4,061,459; 4,030,872; 3,965,715; 3,929,958; 3,887,992; 3,884,612; and 3,776,682.
In the Rieber process, the gasket is installed in a circumferential groove provided upon the working surface of a mandrel and abuts a backup collar which helps to position and retain the gasket during the subsequent belling operation. It is critical that the gasket be properly positioned on the forming mandrel and that the gasket not ride over the backup collar during the belling process.
With prior art gaskets used with the Rieber belling process, it was sometimes possible to reverse or otherwise mis-install the gasket in the circumferential groove provided on the outer working surface of the mandrel. When the heated thermoplastic pipe end was forced over the mandrel, the gasket would fail to be seated properly in the subsequently formed pipe groove within the female, belled pipe end. It was then generally necessary to discard the defective pipe section.
A need exists for an improved sealing gasket for use in a Rieber type manufacturing process, which sealing gasket would be easier and more reliable to seat on the working surface of the forming mandrel.
A need also exists for such a sealing gasket which would be simple in design and simple to manufacture and which could also be used with existing belling technologies.
A need also exists for such a sealing gasket which would simplify handling, which would help to insure correct position on the exterior surface of the working mandrel and which would thereby improve quality control in the pipe belling process.
A need also exists for such a sealing gasket which would effect a more stable bell shape in the subsequently formed female, belled pipe end.
A need also exists for such a gasket which would incorporate a wiping lip feature to wipe the male, spigot pipe end of dirt or other contamination upon subsequent assembly of a pipe joint.

Plastic pipe sealing gasket and process for belling plastic pipe


By providing an additional silicon dioxide based etch stop layer, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. In another aspect, the etch selectivity of the contact structure may be increased by a modification of the etch behavior of the exposed portion of the contact etch stop layer.

1. Field of the Invention
The present invention relates to the field of semiconductor manufacturing, and, more particularly, to the formation of an interconnect structure having a contact plug for directly connecting a gate line with a drain/source region of a transistor.
2. Description of the Related Art
Semiconductor devices, such as advanced integrated circuits, typically contain a large number of circuit elements, such as transistors, capacitors, resistors and the like, which are usually formed in a substantially planar configuration on an appropriate substrate having formed thereon a crystalline semiconductor layer. Due to the large number of circuit elements and the required complex layout of modern integrated circuits, the electrical connections of the individual circuit elements may generally not be established within the same level on which the circuit elements are manufactured, but require one or more additional "wiring" layers, which are also referred to as metallization layers. These metallization layers generally include metal-containing lines, providing the inner-level electrical connection, and also include a plurality of inter-level connections, which are also referred to as "vias," that are filled with an appropriate metal and provide the electrical connection between two neighboring stacked metallization layers.
To establish the connection of the circuit elements with the metallization layers, an appropriate vertical contact structure is provided that connects to a respective contact region of a circuit element, such as a gate electrode and the drain/source regions of transistors, and to a respective metal line in the first metallization layer. The contact plugs and regions of the contact structure are formed in an interlayer dielectric material that encloses and passivates the circuit elements. In some circuit configurations, a connection of individual areas of a circuit element with other individual areas of the same or other circuit elements, such as a connection from a gate electrode or a polysilicon line to an active semiconductor region, such as a drain/source region, may be established by means of the contact structure on the basis of respective contact regions. One example in this respect is the wiring scheme of certain memory devices in which respective contact trenches, frequently called CAREC contacts, connect the gate electrode or polysilicon lines with a drain/source region.
During the formation of respective contact regions directly connecting individual contact regions of circuit elements, however, a plurality of issues may arise, in particular for highly advanced semiconductor devices having critical feature sizes of 100 nm and even less. With reference to FIGS. 1a-1d, a typical conventional process flow for forming respective contact regions for directly connecting polysilicon lines or gate electrodes with respective active semiconductor regions, i.e., drain/source regions, will be described in more detail in order to more clearly demonstrate the problems involved therein.
FIG. 1a schematically shows a semiconductor device 100, which may represent any appropriate circuit, in which a direct contact region, a so-called CAREC, may be formed to connect adjacent circuit regions. The semiconductor device 100 may comprise a substrate 101, which may represent any appropriate substrate, such as a bulk silicon substrate, a silicon-on-insulator (SOI) substrate and the like. The substrate 101 has formed thereon a substantially crystalline semiconductor layer 102 on and in which respective circuit elements are formed, one of which is indicated as element 120. A trench isolation 103 may be formed within the semiconductor layer 102 to define an active semiconductor region 111, which is to be understood as a doped semiconductor region, in which at least a portion is configured in substantially the same way as a drain or source region of a field effect transistor of the device 100. Consequently, the active region 111 may comprise implanted areas 107, 107e, which may be conveniently referred to as drain/source regions 107 with respective extension regions 107e. Moreover, the device 100 may comprise a polysilicon line 104, which may be formed above the active region 111 and which may be separated therefrom by an insulation layer 105, wherein the polysilicon line 104 may be substantially formed according to design criteria as are also used for the formation of gate electrode structures in the device. On side-walls of the polysilicon line 104, respective sidewall spacers 106 may be formed which are typically comprised of silicon nitride. Respective metal silicide regions 108 may be formed on top of the polysilicon line 104 and in the drain/source region 107, and a contact etch stop layer 109, typically comprised of silicon nitride, may be formed on the active region 111 and the polysilicon line 104 including the sidewall spacers 106. Finally, an interlayer dielectric material 110 may be formed above the circuit element 120 represented by the polysilicon line 104 and the active region 111 so as to enclose and passivate the circuit element 120.
A typical process flow for forming the semiconductor device 100 as shown in FIG. 1a may comprise the following processes. The insulation layer 105 and the polysilicon line 104 may be formed on the basis of well-established oxidation, deposition, photolithography and etch techniques, wherein lateral dimensions of the polysilicon line 104 may be formed in accordance with device requirements, wherein, in sophisticated devices, the lateral dimension may be approximately 100 nm and even less. Thereafter, the sidewall spacers 106 may be formed by well-established deposition and anisotropic etch techniques, wherein, prior to and after the formation of the sidewall spacer 106, which may be comprised of a plurality of spacer elements, appropriate implantation processes may be performed in order to form the source/drain region 107 including the extension region 107e.
Next, the metal silicide regions 108 may be formed, for instance, by depositing an appropriate refractory metal and initiating a silicidation process on the basis of an appropriate heat treatment. After the removal of any excess material, the contact etch stop layer 109 may be formed on the basis of well-established plasma enhanced chemical vapor deposition (PECVD) techniques followed by the deposition of the interlayer dielectric material 110, which is typically comprised of silicon dioxide. After any planarization processes, such as chemical mechanical polishing (CMP) and the like, for providing a substantially planar surface of the interlayer dielectric material 110, an appropriate photolithography process may be performed on the basis of a corresponding photolithography mask in order to form a resist mask (not shown) having respective openings corresponding to respective contact openings to be formed above the polysilicon line 104 and the drain/source region 107 to establish a direct electric connection therebetween. Based on a corresponding resist mask, an anisotropic etch process may be performed, which may then be stopped in and on the contact etch stop layer 109 due to the high etch selectivity of the corresponding etch recipe for etching through the silicon dioxide material of the layer 110.
Subsequently, a further etch step may be performed to open the contact etch stop layer 109 in order to contact the polysilicon line 104, i.e., the respective metal silicide region 108 formed thereon, and the drain/source region 107, i.e., the corresponding metal silicide region 108 formed therein. During the respective etch process, the sidewall spacers 106, at least at the side of the drain/source region 107, may also be completely removed, since the contact etch stop layer 109 and the spacers 106 are comprised of the same material and a certain degree of over-etch is required to reliably expose the respective metal silicide regions 108. Consequently, during this over-etch time, the etch front may also attack, after having removed the sidewall spacer 106, the extension region 107e so that the etch front may penetrate the extension region 107e to a certain degree, thereby possibly creating a short to the remaining active region 111 or at least providing a significant risk of increased leakage currents of the resulting electric connection.
FIG. 1b schematically shows the semiconductor device 100 after the completion of the above-described process sequence. Moreover, the semiconductor device 100 comprises a contact region 112, which may be filled with a conductive material, such as tungsten, wherein, at sidewall portions 112S and bottom portions 112B, a conductive barrier material, such as titanium and the like, may be provided. Since the contact region 112 is connected to the respective metal silicide regions 108 of the polysilicon line 104 and the drain/source region 107, a direct electrical connection between these two device areas is established. Moreover, as previously indicated, the etch process for forming a respective contact opening in the interlayer dielectric material 110 and the contact etch stop layer 109 may have created a recess 113 in the extension region 107e, which may even extend into the active region 111 below the extension region, which may be referred to as a well region, thereby possibly creating a short or at least a current path for increased leakage currents. Subsequently, the contact region 112 may be formed on the basis of well-established recipes, comprising for instance the deposition of the barrier layer 114 in accordance with well-established chemical vapor deposition (CVD), physical vapor deposition (PVD) techniques, followed by any appropriate fill technique, such as CVD on the basis of appropriate precursor materials. Thereafter, any excess material of the barrier material and the conductive material comprising the contact region 112 may be removed and a further passivation layer may be deposited.
As a result, the conventional technique may lead to increased leakage currents or even short circuits between portions 113 of the active region 111 that are inversely doped with respect to the drain/source regions 107 and the extension regions 107e, thereby significantly negatively affecting the performance of the device 100.
In view of the situation described above, there exists a need for an enhanced technique that may enable the formation of contact regions for directly connecting contact regions of circuit elements within the contact structure while avoiding or at least reducing the effects of one or more of the problems identified above.

Method of increasing the etch selectivity in a contact structure of semiconductor devices


An optical multiplexer cyclically samples a plurality (N) of optical input signals, each derived from an electrical input signal, at a frequency rate which equals or exceeds the Nyquist rate of each electrical input signal. A demultiplexer demultiplexes a received multiplexed optical signal into N optical signal sample streams which are then converted into the original N electrical input signals using the low-pass electrical frequency filter characteristics of the optical detectors and electrical circuits which connect to the N demultiplexer outputs.

With reference to FIG. 1 we briefly describe the operation of a typical prior art electronics-based multiplexer/demultiplexer circuit. Each input (e.g., A) consists of an elastic buffer (e.g., 101) and a clock recovery circuit (e.g., 103). The clock recovery circuit extracts clock C1 from the input data signal and uses it to clock the data into elastic buffer 101. This data is then clocked out of the elastic buffer with a local clock C2, sampled by the multiplexer 105 and transmitted over communication link 107. At demultiplexer 113, the clock C1 is recovered by circuit 109 from the transmitted signal and used to clock the data into elastic buffer 111. A local clock C3 synchronized with demultiplexer 113 is used to clock the data from elastic buffer 111 to demultiplexer 113. Additionally, multiplexers 105 and 113 have to be synchronized.
Such electronic multiplexer/demultiplexer circuits usually have to be adapted to accommodate the data rate of a variety of continuous or packet input data rates by adjusting the size of the elastic buffers, as long as the data clock rate C2 is greater than the long term average data rate of input A. As input data rates increase and/or communication link data rates change, the multiplexer/demultiplexer may have to be adapted or redesigned and clock recovery gets more difficult. Such adaptations and redesigns are expensive.

Optical Nyquist rate multiplexer and demultiplexer


A method for transmitting video data to the users via a network in a transcoder of an image processing system including a storage media having a predetermined amount of storage area is disclosed. The method includes the steps of storing in the storage media, the video data provided based on the corresponding services, monitoring a traffic condition of the network to determine if transcoding is necessary; transmitting the stored video data to the corresponding users, respectively, via the network, when the transcoding is not necessary; and transcoding the stored video data to transmit the video data to the corresponding users, respectively, when the transcoding is necessary. The video data provided is based on the corresponding services includes image information having the highest quality of service from a content provider.

1. Field of the Invention
The present invention relates to a network transmission method, more particularly to a transcoding method for continuous video display regardless of bandwidth changes in a network.
2. Description of the Related Art
Real time broadcasts using an IP networks are commercially available.
When executing a conventional video data transmission, video/audio data should be transmitted in a compressed form because of large volume of data generally involved. Real time transmission characteristics are very important to various application services. Such application services include for example, a digital broadcast, a VoD (Video on Demand), video conferencing, and etc. The bandwidths of such application services can vary based on times of the services, especially in case of the best-effort scheme such as an Ethernet which generally does not have a fixed and unique bandwidth.
In the conventional video data transmission as mentioned above, losses and delays of the IP networks exert a detrimental influence on streaming services of multimedia data. Especially, the burst transmission characteristic of the IP network can severely hinder the QoS (Quality of Service) of multimedia data streaming services when providing the real time broadcast through the IP network.
For example, when a subscriber watches TV which receives a 20 Mbps HD broadcast signal of the highest QoS via a conventional network system, if the network system performance has deteriorated (due to a congestion of service requests from subscribers), the subscriber cannot continue to receive the HD broadcast service via the TV because there are no means for overcoming or curing properly the changed condition of video transmission operation.

Optical network for bi-directional wireless communication

Maetan-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do


A metal base circuit board to be used for a hybrid integrated circuit, including circuits provided on a metal plate via an insulating layer, a power semiconductor mounted on the circuit, and a control semiconductor to control the power semiconductor, provided on the circuit. A low capacitance portion is embedded under a circuit portion on which the control semiconductor is mounted, preferably. The low capacitance portion is made of a resin containing an inorganic filler and has a dielectric constant of from 2 to 9.

A metal base circuit board comprising an insulating layer made of e.g. an epoxy resin containing an inorganic filler provided on a metal plate, and having a circuit provided thereon, is excellent in heat dissipation properties and is thereby used as a circuit board on which a highly heat generating electronic component is to be mounted.
FIG. 1-1 illustrates one example of a conventional hybrid integrated circuit comprising a metal base circuit board and a semiconductor device mounted thereon. In its structure, a power semiconductor 2 and a signal conditioning semiconductor (hereinafter sometimes referred to as a control semiconductor) 1 are mounted on circuits 3 made of e.g. copper via solder. Further, in its structure, the semiconductors are electrically connected via the copper circuit or via a bonding wire 5. When the power conductor 2 is mounted on the circuit 3, a heat sink 6 is interposed therebetween in many cases so as to accelerate heat dissipation and to prevent an increase in temperature of the power semiconductor which may lead to malfunction (Japanese Patent No. 3156798).
In the hybrid integrated circuit having the above structure, each of the semiconductors and a metal base board are electrically and electrostatically connected. Accordingly, when it is intended to increase the operating frequency (several hundred kHz or above), signals (digital signals) from the control semiconductor 1 are distorted, the power semiconductor 2 malfunctions, and the apparatus itself does not operate as designed in some cases. As a countermeasure against the above, lift-off may be employed so as to eliminate bad influences of the capacitance resulting from a metal board, but there are many problems in view of cost and assembling.
Further, FIG. 1-2 illustrates an example of another known hybrid integrated circuit. There has been an attempt to reduce bad influences of the capacitance resulting from a metal board by increasing the thickness of an insulating layer on which a control semiconductor is mounted as compared with the structure shown in FIG. 1-1. However, in preparation of such a hybrid integrated circuit or a metal base circuit board to be used therefor, it is required to prepare insulating layer portions with different thicknesses partially, which makes the process complicated, and which enlarges the obtained hybrid integrated circuit in an upward direction. Further, there has been an attempt to achieve the above structure by laminating a resin substrate or the like having a circuit preliminarily provided thereon on a metal plate or on a metal plate having an insulating layer provided thereon (also called a metal base board) instead of the increase in thickness of the insulating layer (Japanese Patent No. 2608980), however, the above problem still remained unsolved.
With respect to a circuit board on which a hybrid integrated circuit is mounted, along with high integration of a semiconductor device, a means becomes in the mainstream that a power semiconductor device, etc. is miniaturized and further, a resistor chip, etc. in addition to various types of semiconductor devices, is mounted on the same board. As board characteristics required are different among the respective semiconductor devices and electronic components, a circuit board having characteristics partially corresponding to the respective semiconductor devices and electronic components has been required.
Accordingly, a circuit board comprising different types of insulating layers combined has been proposed, as disclosed in JP-A-6-90071, for example. However, it costs a lot to produce such a composite insulating board since a process of its production is complicated, and further, it is not technically easy to complicatedly combine different types of insulating layers in a small area, whereby considerable miniaturization of a circuit board has been hardly achieved.
Further, in a hybrid integrated circuit employing a metal base circuit board, usually, both power semiconductor and control semiconductor to control operation of the power semiconductor are mounted on circuits of the metal base circuit board. As characteristics required for the metal base circuit board, the former is required to be excellent in thermal conductivity even if it has a slightly high capacitance, and the latter is required to have a very low capacitance even at the sacrifice of the thermal conductivity.
However, it was found that if a control semiconductor is mounted on a circuit which is designed to have a very low capacitance, concurrent heat dissipation from the control semiconductor is insufficient, and no sufficient operating time can be secured in some cases.

Metal-base circuit board and its manufacturing method


A thermostatic valve includes a valve body with a cavity provided therein, an end cover assembly, and a thermal actuator and at least one spring that are mounted in the cavity. The valve body is provided with at least three ports including a first port, a second port and a third port. The thermal actuator includes a valve rod and a main body. The spring includes a first spring. The cavity includes a first cavity and a second cavity, and the second cavity is away from the end cover assembly. The first port is in communication with the first cavity, and the third port is in communication with the second cavity. The first spring is partially or completely located in the second cavity. The thermostatic valve further includes a guide fitting part. The thermostatic valve has a simple structure, and the operation thereof is more stable and reliable.

During running of a vehicle, its various components need to be lubricated timely by lubricating oil, so as to ensure a normal running of the vehicle. If the lubricating property of the lubricating oil is not good enough, the service life of the vehicle will be adversely affected. In addition, the lubricating property of the lubricating oil is associated with the temperature of the lubricating oil. If the temperature of the lubricating oil is too high or too low, the lubrication performance of the lubricating oil will be affected.
The temperature of the lubricating oil is generally not too high during normal running. In the case that the vehicle is overloaded or is set in a four-wheel drive mode to run in snow or run off-road, the vehicle is running in a state that a hydraulic torque converter slips excessively, which may cause the gearbox oil to have an excessively high temperature, thus degrading the lubricating property.
The temperature of the gearbox oil is mainly adjusted by a temperature-controlled flow path constituted by a thermostatic valve and a heat exchanger for external cooling. When the temperature of the gearbox oil line increases, the heat-sensitive material of a thermal actuator expands due to heat, the passage for the gearbox oil to directly flow back to the gearbox is blocked, or the flow rate of the passage decreases, therefore the high temperature oil enters the heat exchanger for external cooling to be cooled and then flows back to the gearbox. Conversely, when the oil temperature is too low, the heat-sensitive material of the thermal actuator begins to solidify and contract, a valve rod is reset and the passage for the gearbox oil to directly flow back to the gearbox is open. The oil in the gearbox oil line exchanges heat with exothermic gearbox components in the flow process, so that the oil temperature is controlled within an appropriate range.

Zhejiang Sanhua Automotive Components Co., Ltd.


The present method adds uplink data to a transmission request sent to the base station from the mobile station for obtaining permission for data transmission, or to a channel establishment request sent from the mobile station to the base station for establishing a channel in order to send the transmission request therethrough. This makes it possible to suppress delay caused by negotiation prior to actual uplink data transmission as much as possible, thereby realizing efficient uplink data transmission, that is, improved throughput of uplink communication.

(1) Field of the Invention
The present invention relates to a communication method in a mobile communication system and a mobile station and a base station in the same system. The invention relates particularly to a technique suitable to improve the throughput of uplink data communication from the mobile station to the base station.
(2) Description of Related Art
In the current 3GPP (3rd Generation Partnership Project), standardization of W-CDMA (Wideband-Code Division Multiple Access), which is one of the schemes of the third-generation mobile communication system, is in progress. One of the themes of the standardization is the HSDPA-(High Speed Downlink Packet Access) scheme which provides a great-capacity high-speed packet data transfer (about 14 Mbps at maximum) in the downlink direction from a base station to a mobile station. Further, the HSUPA (High Speed Uplink Packet Access) scheme, which can be regarded as HSDPA in the uplink direction from a mobile station to a base station, is under investigation (see, for example, the following non-patent document 1).
In such high-speed data transmission, data transmission scheduling for efficient sending-out of data packet is important. In HSUPA, scheduling is determined based on such information as reception quality, the amount of buffer remaining, priority, and so on. These information items are notified from a mobile station to a base station as Scheduling Information (SI) in form of an uplink transmission request prior to uplink transmission.    [Non-patent Document 1] 3rd Generation Partnership Project (3GPP); Technical Specification Group Radio Access Network; "TS 25.309 V6.2.0 (2005-03) FDD Enhanced Uplink Overall Description Stage 2 (Release 6)"
In the present 3GPP specification, communication execution by HSUPA is performed after establishment of dedicated radio channels, and as procedures from call generation to call setting and HSUPA application, known procedures applied. Accordingly, delay occurs between a data transmission request on a terminal and actual data transmission.
For example, as shown in FIG. 25, a mobile station (UE: User Equipment) 100 sends an access request to a base station (BTS: Base Transceiver Station) 200 (step S100) by a random access method. Upon receipt of a reply to the access request from the base station 200 (step S200), the mobile station 100 sends a dedicated radio channel establishment request to the base station 200 (step S300). When a reply to the channel establishment request is received by the mobile station 100 (step 400), the mobile station 100 sends a transmission rate request to the base station 200 (step S500). When a rate is assigned by the base station 200 (step S600) in response to the transmission rate request, the mobile station 100 eventually starts data transmission (steps S700 and S900). Here, when the data transmitted is normally received by the base station 200, ACK is sent back to the mobile station 100, and when the data transmitted is not received normally, NACK is sent back to the mobile station 100 (step S800). Upon receipt of NACK, the mobile station 100 performs data retransmission.
Under a condition where the data rate is low, delay caused by such negotiation prior to actual uplink data transmission is inconspicuous, but as the data rate increases, the delay becomes a considerable problem. In addition, for realization of "Always on" by radio, it is preferable that connection delay be as small as possible.

Communication method in mobile communication system, and mobile station and base station in the same system


A vehicle entertainment system includes a video system mounted within a vehicle, a video monitor for presenting video content and a video source integrated therewith. The video source is a hard drive or flash memory. The vehicle entertainment system further includes a circuit board including an input/output assembly associated with the video source for the transmission of video content. The entertainment system also includes a common support member upon which the video source and circuit board are mounted. The input/output assembly includes a means for wireless transmission of video content to the video system.

1. Field of the Invention
The invention relates to a vehicle entertainment system. More particularly, the invention relates to a vehicle entertainment system providing for remote sharing and storage of video content.
2. Description of the Prior Art
Entertainment systems for automobiles, and other vehicles, are well known. As such, many advances have been made in the development of entertainment systems that make the otherwise tedious task of riding in an automobile more bearable. In addition to the development of overhead systems pioneered by the present inventor, systems that mount within the headrest of an automobile have also been developed. These headrest entertainment systems allow multiple individuals to view a variety of different video sources within the same vehicle.
However, and as those skilled in the art will certainly appreciate, it is desirable to provide added versatility to these entertainment systems. The present invention attempts to accomplish this by providing a video system including an integrated hard drive or flash memory and providing for remote, wireless transfer of video information to the hard drive or flash memory.

Vehicle entertainment system for remote sharing and storage of video content


The invention relates to an analysis apparatus with an analysis device for analyzing body fluids, and a magazine for test elements with a fresh supply container and a transfer unit that comprises a transfer element. At least one aperture for receiving a test element is formed in the circumferential surface of the transfer element. A waste container is provided in which used test elements are stored again after use.

The present invention relates to a transfer unit for test elements that are used for detection of an analyte in a body fluid.
Many different kinds of systems and devices for analysis of body fluids are known, in particular, systems in which a large number of test elements are stored. The test elements are generally strip-shaped and are accommodated in a magazine. Disk-shaped storage systems or drum-shaped storage systems are suitable for storing test elements. However, disk-shaped or drum-shaped magazines are only practicable for a small number of 5 to 20 test elements. For test elements up to this number, disk-shaped and drum-shaped magazines are good ways of ensuring space-saving storage of test elements.
If larger quantities of test elements are to be stored, however, a disk magazine or drum magazine becomes unmanageable since, in order to receive a larger number of test elements, the diameter of the disk or drum magazine must be increased. For test elements numbering 20 or more, stack magazines according to U.S. Pat. No. 6,827,899 can be used. The stack magazine known from U.S. Pat. No. 6,827,899 stores fresh test elements, but requires that the user dispose of individual used test elements contaminated with a body fluid.
U.S. Pat. No. 6,159,424 relates to a device for handling measurement strips which are used to collect fluid samples, for example, blood samples. The measurement strips have a porous material for absorbing the fluid sample and for analysis thereof. The measurement device according to U.S. Pat. No. 6,159,424 has a reservoir which is designed as a composite structure for measurement strips that take up samples, it has another reservoir for receiving used measurement strips, and also has a delivery mechanism for measurement strips. The device known from U.S. Pat. No. 6,159,424, with the reservoir for unused measurement strips and the reservoir for used measurement strips, is preferably integrated inside a housing part.
U.S. Pat. No. 6,534,017 relates to a storage device for test elements. The test elements are held inside a magazine, and the test elements have one or more test zones which are arranged lying next to one another on a rectangular support. The magazine comprises at least one pair of guide grooves which are arranged lying opposite each other and into which the test elements are inserted in such a way that they lie directly next to one another and the edges of contiguous supports abut one another. According to a further aspect of U.S. Pat. No. 6,534,017, a slide is proposed which is used in addition to the magazine and which serves to move a layer of test elements along the guide grooves to the opposite end and to dispense test elements from the magazine.
One disadvantage of the devices discussed above is that the person using an analysis system or an analysis device for examining a human body fluid for an analyte has to dispose of contaminated test elements himself, which is regarded as highly unsatisfactory and needs to be remedied.


The invention relates to a structure for a hand trowel handle with adjustable rotational angle on the grasping section. The hand trowel is composed of a blade, a connecting section and a grasping section. The connecting section uses its base to connect with the tongue on the blade. The structure for the grasping section with adjustable rotational angle features mainly in the radial toothed rings at the front end of the grasping section and at the supporting end of the connecting section. When the grasping section is worn on the shaft in the center if the radial toothed ring of the connecting section, the grasping section can be tightened or loosened through the adjustment knob, the spring and the shaft in the accommodating hole. Thus, the rotational angle between the grasping section and the shaft can be adjusted.

1. Field of the Invention
The invention relates to the tools for cement work or glue work. Especially, it relates to a structure for a hand trowel handle with adjustable rotational angle. The structure provides the ability to adjust the angle between the handle and the blade. Thus, an appropriate grasping is achievable to operate the hand trowel under any work condition.
2. Description of the Prior Art
In a construction project, either wall finishing work (surface cement) or glue work (carpeting, tile paving) needs a hand trowel. Due to lengthy work time, the handle for a common hand trowel is designed to be soft and easy hand-grasping. Thus, the worker can easily and smoothly finish the work. Please refer to U.S. Pat. No. 6,499,178 B1 for an assembly structure for a hand trowel. Its grasping section of the handle is made of soft resin material, so it provides a firm, easy and slip-proof grasp. Its handle can be assembled and disassembled quickly with a base and a blade tongue. Thus, the handle can work with blades in different shapes and areas. In a real hand trowel work, it is common to have different angles among different architectural object surfaces. The hand trowel needs to change angle during the work. If the grasping handle does not adjust angle with the object surface, it will create inconvenience and difficulty for the worker to operate the trowel. Therefore, the invention makes improvement over this apparent shortcoming, which is also the motive for the present invention.

Structure for a hand trowel handle with adjustable rotational angle


An indirect cooling system suitable for a plasma jet cutting method is established to prevent the leakage of cooling water and to enable a stable plasma jet to be obtained. A tip having a nozzle for emitting a plasma jet is fitted to a nozzle sleeve through which cooling water circulates, and electric discharge is induced between the tip and an electrode extending through the nozzle sleeve to the neighborhood of the tip, thereby ionizing a neutral gas and emitting a plasma jet through the nozzle. In the indirectly-cooled plasma jet torch, the tip is brought into surface contact with the nozzle sleeve to fit them to each other, and contact portions of the tip and the nozzle sleeve are tapered.

The present invention relates to a plasma jet torch usable as a cutting jig for decommissioning a nuclear fuel plant or as a cutting jig for cutting metallic and non-metallic materials. More specifically, the present invention relates to an indirectly-cooled plasma jet torch in which a tip having a nozzle for emitting a plasma jet is fitted to a nozzle sleeve through which cooling water circulates, and electric discharge is induced between the tip and an electrode extending through the nozzle sleeve to the neighborhood of the tip, thereby ionizing a neutral gas and emitting a plasma jet through the nozzle.
As the temperature rises, a substance changes from a liquid to a gas, and if the temperature is further raised, atoms move vigorously, and the substance eventually reaches a state in which freely moving positive and negative charged particles coexist together and the gas is electrically neutral. The gas in this state is known as "plasma". When a plasma generated by gas discharge is jetted out through a fine opening (nozzle) in a cooled metal (tip), a high-temperature and high-velocity gas stream is produced. This is called "plasma jet". Because the periphery (tip) of the gas stream, which has high conductivity, is cooled, the electric current concentrates in the central part. When the gas stream is accompanied by an electric current, the diameter of the gas stream is narrowed. Therefore, it is possible to obtain a plasma jet having a much smaller cross-section than in the case of ordinary discharge and a high temperature (from 10,000.degree. C. to 20,000.degree. C.).
Plasma cutting methods using such a high-temperature plasma include a plasma arc cutting method for cutting metals, and a plasma jet cutting method for cutting metallic and non-metallic materials. According to the plasma arc cutting method, a metallic workpiece is cut by a plasma jet created by passing an electric current between an electrode and the workpiece.
The plasma jet cutting method will be described below more specifically with reference to FIG. 1 of the accompanying drawings. A working gas (e.g. argon gas) is supplied between a tungsten electrode 1 and a tip 2. The gas is ionized by high-frequency arc discharge induced by a high-frequency generator 4, and an arc current is continuously supplied from a plasma power supply apparatus 3 to generate a plasma by the heat of arc energy. The thermal expansion of the plasma gas itself causes a plasma jet 5 to emit from the nozzle of the tip 2 to thereby cut a workpiece 6. Because the tip 2 is exposed to the high temperature of the plasma jet 5, it will melt if the tip 2 is left as it is. Therefore, the tip 2 is cooled by circulating cooling water through it. With the plasma jet cutting method, it is possible to cut non-conductive materials such as refractory brick and concrete because the arc current does not flow through the workpiece 6. However, the energy density of the plasma jet thus formed rapidly reduces as the distance from the nozzle increases, and the thermal efficiency with respect to the workpiece is as low as 10% to 20% (the thermal efficiency of the plasma arc cutting method is from 60% to 70%). Thus, the plasma jet cutting method is not efficient; therefore, it is not generally put into practical use in the present state of art. As a commercially available product, there is a Class 30A torch. In some rare cases, the plasma jet cutting method is applied to welding and thermal spraying.
However, in decommissioning of a nuclear fuel plant, the plasma jet cutting method can be effectively applied to a cutting jig for decommissioning because devices constituting a nuclear fuel plant vary widely in terms of both material and shape, i.e. concrete, plastics, etc., and it is possible to cut metallic and non-metallic materials by the plasma jet cutting method. Therefore, we made a compact and lightweight plasma jet torch on an experimental basis, and carried out tests on the plasma jet torch by using the material, shape, etc. of the tip as parameters. Thus, we have already proposed a practical torch tip capable of ensuring a stable plasma jet and of cutting a metal plate having a thickness of about 45 millimeters (made of SUS304) see Japanese Patent Application Unexamined Publication (KOKAI) No. 7-32157!.
FIG. 2 is a diagram illustrating the above-described practical torch tip. The material used to constitute the torch tip is a Cu--Zr alloy. The nozzle diameter a is from 3.0 millimeters to 3.5 millimeters. The nozzle constriction ratio (the ratio b/a of the length b of the nozzle constricting portion to the nozzle diameter a) is from 2.5 to 3. Thus, the torch tip is made compact and lightweight, improved in durability and arranged to form a stable plasma jet.
However, the practical torch tip shown in FIG. 2 has a problem in terms of maintenance. More specifically, to improve the thermal pinch effect of the plasma jet (i.e. the effect in which the plasma jet is constricted by cooling from the surroundings to become a high-temperature plasma jet), the torch tip adopts a direct cooling system in which water is circulated through the tip. Because the tip is an expendable part, it must be replaced after use for about 5 hours. Therefore, in the case of the direct cooling system, when the tip is detached from the nozzle sleeve (a part to which the tip is fitted and which supplies cooling water into the tip), cooling water leaks. Thus, the torch tip shown in FIG. 2 suffers from a problem in terms of maintenance.
The cooling water circulating path in the direct cooling system will be described below with reference to FIG. 3.
Cooling water is supplied from a cooling water tank 11 and a radiator 12, which are installed in a plasma power supply apparatus 3, to a plasma jet torch body 20 through a strainer 13 by a pump 14. The cooling water supplied to the plasma jet torch body 20 flows into a tip 2 through a cooling water (incoming) line 21a provided in a nozzle sleeve 21 to which the tip 2 is fitted. After circulating through the tip 2, cooling water returns to the plasma power supply apparatus 3 through a cooling water (outgoing) line 21b provided in the nozzle sleeve 21. Because of the described structure, the tip 2 serves as a cover for the nozzle sleeve 21, and when the tip 2 is detached from the nozzle sleeve 21, the lines 21a and 21b in the nozzle sleeve 21 are completely opened. Consequently, cooling water remaining in the pipe leaks. It should be noted that reference numeral 16 shown at the plasma power supply apparatus 3 denotes a water supply port, and reference numeral 17 denotes a drain for overflow.
In a case where plasma equipment is used in decommissioning of a nuclear fuel plant or the like, it is a general practice to install the plasma power supply apparatus in a green area because it has a large size 1038 millimeters (W).times.1551 millimeters (L).times.1308 millimeters (H)! and to dispose the plasma jet torch body in a red area. Accordingly, if cooling water leaking when the tip is removed becomes radioactive waste under the influence of devices installed in the red area, the radioactive waste is likely to circulate through the plasma power supply apparatus. Therefore, it is necessary to maintain the water sealing properties from the viewpoint of preventing contamination.
Incidentally, an indirect cooling system that is generally used for the plasma arc cutting method may be effectively employed to prevent the leakage of cooling water during tip replacement and the radioactive contamination of cooling water. In the indirect cooling system, cooling water circulates through the distal end of a nozzle sleeve to which a tip is fitted. The tip is fitted to the cooled nozzle sleeve by thread engagement. Thus, the tip is cooled by heat transfer from the nozzle sleeve. With the indirect cooling system, no cooling water leaks when the tip is detached from the nozzle sleeve. Therefore, to apply the indirect cooling system to the plasma jet cutting method, we experimentally produced an indirectly-cooled torch having an insulating insert (ceramics) interposed between a nozzle sleeve and an electrode and arranged to apply a voltage between the electrode and a tip. With this trial product, however, the created plasma jet was unstable. Moreover, the tip became red-hot in several seconds after the start of emission of a plasma jet, and the distal end of the tip melted. Therefore, the indirect cooling system for the plasma arc cutting method cannot be employed as it is for cooling a tip used in the plasma jet cutting method, and it is necessary to establish an indirect cooling system suitable for the plasma jet cutting method.


An X-ray diagnostic apparatus includes a peak frequency detector detecting a peak frequency of a first harmonic in a moiré pattern of a grid in an image; a harmonic remover removing the first harmonic and a second harmonic in the moiré pattern from the image in accordance with the peak frequency of the first harmonic to obtain a first and second harmonic removed image; a harmonic extracting-filter generating unit calculating a peak frequency of a third harmonic in the moiré pattern in accordance with the peak frequency of the first harmonic to generate a harmonic extracting filter to extract the third harmonic; a harmonic extracting unit extracting the third harmonic from the first and second harmonic removed image based on the harmonic extracting filter; and a harmonic subtracting unit subtracting the extracted third harmonic from the first and second harmonic removed image to obtain a third harmonic removed image.

As illustrated in FIG. 11, a conventional X-ray diagnostic apparatus includes an X-ray tube 103 that irradiates a subject M with X-rays; an X-ray detector (e.g., a flat panel X-ray detector (FPD)) 104 that detects X-rays transmitting through the subject M; and a scattered-radiation removal grid (hereinunder, abbreviated as "grid") 105 disposed on a side where X-rays enter into the X-ray detector 104. The grid 105 removes X-rays scattered upon transmitting through the subject M. The grid 105 is formed by absorbers (e.g., lead) and transmission elements (e.g., aluminum or air) arranged alternately, the absorbers absorbing X-rays and the transmission elements transmitting X-rays. In the grid 105, the absorbers absorb X-rays scattered and entering obliquely, and the X-ray detector 104 only detects X-rays transmitting through the transmission elements. This enables to obtain a clear image.
In the conventional X-ray diagnostic apparatus 101, however, a moiré pattern of the grid 105 appears in the obtained image due to difference between resolution of the X-ray detector 104 and density of the grid 105. Such a problem may arise. Various suggestions have been made to take measures against the moiré pattern of the grid 105. See, for example, Japanese Patent Publication No. 2002-152467A.
Moreover, the conventional X-ray diagnostic apparatus 101 as illustrated in FIG. 11 includes a moiré pattern remover 121. The moiré pattern remover 121 removes a first harmonic and a second harmonic in the moiré pattern of the grid 105 appearing in the image. First, one-dimensional Fourier transform is performed to the image with the moiré pattern appearing therein. Then, in accordance with results from the Fourier transform, a peak frequency representing the first harmonic in the moiré pattern is detected. Here, the second harmonic is twice (integral multiple) the first harmonic, and thus enables to be calculated from the peak frequency of the first harmonic. Then, in accordance with the peak frequencies of the obtained first and second harmonics, a filter is prepared to extract the first and second harmonics in the moiré pattern. The first and second harmonics are extracted using the filter. Thereafter, the first and second harmonics are subtracted from the image with the moiré pattern appearing therein. As a result, the first and second harmonics in the moiré pattern are removed.
The resolution of the X-ray detector 104 enables to be expressed by a Nyquist frequency Ny. Here, a Nyquist frequency Ny represents a limit of spatial frequencies that enables to be sampled at pixel pitches δ (mm). The Nyquist frequency Ny is calculated from Equation (1) as under:Ny=1/(2×δ)  (1)For instance, assuming that the X-ray detector 104 has pixel pitches δ of 150 μm, a Nyquist frequency Ny is calculated:Ny=1/(2×0.15)=3.33 . . . lp/mm.That is, the resolution of the X-ray detector 104 is 3.33 . . . lp/mm. Here, the resolution of the X-ray detector 104 is appropriately assumed to be "3.33 lp/mm".Moreover, the density of the grid 105 is, for example, 50 line/cm. Here, 50 line/cm is also expressed by 5 line/mm or 5 lp/mm. As for the grid 105, "line/cm" or "lp/mm" represents the number of absorbers or the number of pairs of the absorber and transmission element (e.g., 50 or 5) per unit of length (e.g., 1 cm or 1 mm). When the X-ray detector with the resolution of 3.33 lp/mm and the grid with the density of 5 lp/mm (50 line/cm) are used, a moiré pattern of the grid (5 lp/mm) is folded at 3.33 lp/mm and thus occurs in a position of 1.67 lp/mm. In other words, a first harmonic in the moiré pattern of the grid appears in a position of 3.33 . . . lp/mm−(5 lp/mm−3.33 . . . lp/mm)=1.67 (1.666 . . . ) lp/mm.

X-ray diagnostic apparatus and storage medium storing X-ray diagnostic program


A hair clipper has a cutter head on the front end of a housing. The cutter head includes a toothed stationary blade and a toothed movable blade reciprocating on the stationary blade in hair shearing engagement between individual toothed edges thereof. The toothed edge of the stationary blade is tapered to have a thickness narrower toward its leading edge along an edgewise direction thereof. The stationary blade is slidable in a direction perpendicular to the reciprocating direction thereof, for varying a cut length of the hairs to be sheared between the movable and stationary blades. An adjustor handle is slidably mounted on the housing and linked to the movable blade for effecting the sliding movement thereof. A latch is provided to latch the adjustor handle in position for fixing the cut length. A release knob projects on a portion of the handle to be accessible by a finger of the user manipulating the handle. The release knob is actuated upon being pressed to unlatch the latch means for permitting the slidable movement of the adjustor handle and the movable blade in the direction of adjusting the cut length.

1. Field of the Invention
The present invention is directed to a hair clipper, and more particularly to a powered hair clipper capable of varying a cut length of the hairs especially suitable for cutting the hairline at the nape.
2. Description of the Prior Art
Hair clippers with varying cut length capability have been known as disclosed in U.S. Pat. No. 2,726,447 in which one of cutter blades is driven by a motor to move back and forth in the edgewise direction while it is driven to reciprocate transversely for hair shearing between toothed edges of the cutter blades. Since the one of the cutter blades is driven by the motor to shift its position relative to the other cutter blade in synchronism with the hair shearing reciprocating movement of that blade, the cut length will be continuously varied during the hair shearing operation without causing any unexpected shifting of the one cutter blade relative to the other cutter blade which would otherwise result in uneven hair cutting. Nevertheless, it is sometimes required for more convenient hair cutting to adjust the cut length or depth manually and independently of the hair shearing reciprocating movement. To satisfy this requirement, it is contemplated to provide an adjustor handle on a hair clipper housing to be readily accessible by the hand of the user for varying the cut length. However, there is a certain limitation in this structure that the one cutter blade should have sufficient frictional engagement with the other cutter blade in order to avoid unexpected shifting of the one blade relative to the other blade. The result is that a relatively great operational force is required for the user to slide the handle and therefore the cutter blade against the frictional force when adjusting the cut length of the hairs. This is inconvenient and is therefore a cause of accumulating fatigue of the wrist and of the fingers when shearing the hairs while varying the cut length continuously and manually, for example, in cutting the hairline at the nape where the cut length is gradually varied without leaving any noticeable steps therein. Such fatigue will mount rapidly especially when cutting the hairs of plural persons successively, which eventually results in an undesired uneven cut.


Embodiments of the present invention provide a method, system and computer program product for aggregating database and component logic authorization rules in a multi-tier application. In an embodiment of the invention, a method for aggregating database and component logic authorization rules in a multi-tier application system can include aggregating role-based authorization rules for both a persistence layer and a logic layer of a multi-tier application in a unified policy, distributing the unified policy to both the persistence layer and the logic layer of the multi-tier application, transforming the unified policy into respectively a set of role based permissions for the persistence layer and a set of role based permissions for the logic layer, and applying the set of role based permissions for the persistence layer in the persistence layer, and the set of role based permissions for the logic layer in the logic layer of the multi-tier application.

1. Field of the Invention
The present invention relates to the field of multi-tier application management and more particularly to authorizing access to multiple components of a multi-tier application.
2. Description of the Related Art
A multi-tier application is an application structurally distributed across a computer communications network. In a multi-tier application, the interface, data storage, the logical functionality of the application can be spread across one or more computing units and can be configured to interact with one another in concert to produce the effect of a unitary application. Different layers of a multi-tier application can communicate with one another, receiving input for processing and producing output to be provided to a different layer of the application.
Functional layers of a multi-tier application include a persistence layer in which application data is stored in a sensible, organized way, an accessor layer in which database access logic can be implemented to interact with the persistence layer, a logic layer processing user input and stored data to produce a useful result, and a presentation layer configured to present the useful result to an interacting end user. Additionally, a requestor/consumer layer can be provided through which an end user can interact with the application. Typically, a Web browser or heavy client acts as the requestor/consumer layer. Of note, security considerations must be applied at all layers of a multi-tier application.
In this regard, coordinating access control to different layers of a multi-tier application can be challenging as different technologies can structurally support different layers. For instance, user interface technologies such as dynamic markup language and script driven user interface engines require and support one set of languages and tools for specifying access control policies and different policy enforcement points for enforcing them. Intermediately, the logical components of the business logic and process orchestration layer of a multi-tier application support yet a different set of languages and tools for specifying access control policies and different policy enforcement points for enforcing them
With respect to a database in the persistence layer, the structured query language (SQL) grant statement (SQL_GRANT) provides an exemplary mechanism for specifying authorization rules for database tables. SQL_GRANT statements generally are stored within special tables of an associated database. By comparison, with respect to component based logic in the logic layer, role-based access control is provided and stored in deployment descriptors for respective components. While the identity of an end user can flow from the logic layer to the persistence layer, the authorization rules for the same end user can vary due to different languages of specification and different storage locations. Additionally, due to the differences in the policy specification language and multiplicity of policy enforcement points, applications often choose to simplify specification and enforcement of access control policies only at one layer of the multi-tier application leaving other layers unprotected. Accordingly, inconsistencies can arise in the production and management of the authorization rules giving rise to security holes.

Database authorization rules and component logic authorization rules aggregation

International Business Machines Corporation


A golf club head that includes: a pedestal composed of at least two ribs each having convex portions at both ends and formed on an inner face of the head; a metal weight disposed on the ribs; and a weld bead extending on a surface of the weight between the convex portions, the weight being fixed on the inner face of the head by the weld bead.

1. Field of the Invention
The present invention relates to a hollow golf club head in which a metal weight is welded on the inner face of the head.
2. Description of the Related Art
Conventionally, a hollow golf club head in which a weight made of a metal having a large specific gravity is welded on the inner face of a sole portion has been proposed to adjust the centroid position or weight of the golf club head. JP-A-9-266964, JP-A-2005-211438 and Japanese Utility Model No. 3052997, for example, disclose such a golf club.
The golf club head disclosed in JP-A-9-266964 is a metal golf club head that is hollow in the inside, in which a metal member having a larger specific gravity than the material of a head main body is welded on the hollow side of a bottom wall portion forming a sole of the head main body, and a deposited metal by the welding is swollen from the bottom wall portion and covered over an upper portion of the metal member.
The golf club head disclosed in JP-A-2005-211438 comprises a head portion made of metal and having an outer shell structure, a plurality of post portions spaced and stood on the surface of a sole portion in the head portion, and a weight member disposed near the post portions in the sole portion and joined with the post portions via a welded part.
The golf club head disclosed in Japanese Utility Model No. 3052997 comprises a weight member having a larger specific gravity than the head main body that is fixed on the inner face of the head main body, in which the weight member is welded on the inner face of the head main body, and a deposited metal by the welding extends from the inner face of the head main body to the upper face of the weight member.


The present invention relates to a glass for a pharmaceutical container that is excellent in ultraviolet shielding ability, and is also excellent in chemical durability. The glass for a pharmaceutical container of the present invention includes as a glass composition, in terms of mass %, 67% to 81% of SiO2, more than 4% to 7% of Al2O3, 7% to 14% of B2O3, 3% to 12% of Na2O+K2O, 0% to 1.8% of CaO+BaO, 0.5% to less than 2% of Fe2O3, and 1% to 5% of TiO2, and satisfies a relationship of CaO/BaO≤0.5.

Various glasses have hitherto been used as materials for containers to be filled for storing pharmaceuticals. While the pharmaceuticals are roughly divided into two kinds: an oral drug and a parenteral drug, in particular, the parenteral drug is directly administered to blood of a patient as a drug solution filled and stored in a glass container, and hence the glass container is required to have significantly high quality. Pharmaceutical containers have two kinds of color tones: colorless and colored. Out of such pharmaceutical containers, the colored container is required to have a function of blocking ultraviolet light so that a pharmaceutical included therein is not altered through irradiation with light. For example, in the case of a drug containing Vitamin C, Vitamin C may be altered with ultraviolet light. As a method of solving such problem, there has been developed a glass for a pharmaceutical container in which the glass is colored to have a function of blocking ultraviolet light (for example, see Patent Literatures 1 and 2). In addition, in pharmacopoeias of various countries, with regard to a colored glass for a pharmaceutical container, an upper limit of a transmittance within a specific wavelength range is specified.
In addition, the pharmaceutical container is required not to alter components of a drug solution filled therein owing to an eluted material from the container. When glass components are eluted into the drug solution, there is a risk in that the properties of the drug solution are altered, which affects the health of a patient and even the life of the patient. Therefore, in the pharmacopoeias of various countries, the elution amounts of the glass components of the glass for a pharmaceutical container are specified.
In general, a borosilicate glass is used as the glass for a pharmaceutical container. Moreover, a colored borosilicate glass for a pharmaceutical container having a function of blocking ultraviolet light includes, as a glass composition, SiO2, Al2O3, B2O3, Na2O, K2O, CaO, BaO, Fe2O3, TiO2, and a small amount of a fining agent.
Incidentally, in recent years, many kinds of new drugs have been created through rapid advances in pharmacology, and also a drug to be filled in the pharmaceutical container has been changed. A relatively inexpensive drug, such as a blood coagulant or an anesthetic drug, has hitherto been mainly filled therein, but recently, a prophylactic agent, such as an influenza vaccine, or a significantly expensive drug, such as an anticancer drug, has been often filled therein. Along with this, the borosilicate glass for a pharmaceutical container, which forms a vial or an ampoule, is required to have higher chemical durability (hydrolytic resistance, alkali resistance, acid resistance, and the like) than ever before. Moreover, the colored borosilicate glass for a pharmaceutical container may also be similarly required to have such high chemical durability.
In Patent Literature 1, there is disclosed an amber colored pharmaceutical glass having the above-mentioned components. However, it is hard to say that such glass satisfies the chemical durability required in recent years.
In addition, in Patent Literature 2, there is described that, in a glass having high chemical durability, for example, the content of an alkali metal oxide, such as Li2O, Na2O, or K2O, or an alkaline earth metal oxide, such as MgO, CaO, SrO, or BaO, contained in the glass is reduced, or the content of Al2O3 contained therein is increased. However, it is insufficient to merely increase or reduce the content of each component for satisfying the chemical durability required in recent years.

Glass for medicine container and glass tube for medicine container


Methods and systems are provided for dynamic supplemental-channel (SCH) burst duration. In an exemplary embodiment, a base station provides a wireless coverage area having a plurality of traffic channels, an SCH, an SCH queue, and an SCH burst duration initially set to a first value. The base station computes Ec/Ior for the coverage area, and determines (i) whether the computed Ec/Ior is greater than an RF threshold, (ii) whether the number of mobile stations in the SCH queue is less than a queue threshold, and (iii) whether the number of mobile stations having a traffic channel in the coverage area is less than a traffic-channel threshold. The base station determines a second value based at least in part on each of those determinations, and operates with the SCH burst duration set to the second value.

1. Technical Field
The present invention relates to wireless communications, and, more particularly, to conducting packet-data communications via wireless networks.
2. Description of Related Art
a. CDMA Networks Generally
Many people use mobile stations, such as cell phones and personal digital assistants (PDAs), to communicate with cellular wireless networks. These mobile stations and networks typically communicate with each other over a radio frequency (RF) air interface according to a wireless communication protocol such as Code Division Multiple Access (CDMA), perhaps in conformance with one or more industry specifications such as IS-95 and IS-2000. Wireless networks that operate according to these specifications are also referred to as "1 xRTT (1x) networks," which stands for "Single Carrier Radio Transmission Technology". These networks (referred to herein as "CDMA networks") typically provide communication services such as voice, Short Message Service (SMS) messaging, and packet-data communication.
Typical CDMA networks include a plurality of base stations, each of which provide one or more wireless coverage areas, such as cells and sectors. When a mobile station is positioned in one of these coverage areas, it can communicate over the RF air interface with the base station, and in turn over one or more circuit-switched and/or packet-switched signaling and/or transport networks to which the base station provides access. The base station and the mobile station conduct these communications over a frequency known as a carrier. Note that base stations may provide service in a coverage area on one carrier, or on more than one.
Communication, including packet-data communication, between the mobile station and the base station is separated into forward-link communication (from the base station to the mobile station) and reverse-link communication (from the mobile station to the base station). And each carrier over which this communication takes place is typically actually a pair of distinct frequencies—one for the forward link and the other for the reverse link. This approach is known as frequency division duplex (FDD).
In a typical CDMA network, using a configuration known as radio configuration 3 (RC3), a base station can, on each carrier in each sector, transmit forward-link data on a maximum of 64 distinct channels at any given time. As a side note, an instance of a carrier in a sector may be referred to herein as a "sector/carrier." Each of these 64 channels corresponds to a unique 64-bit code known as a Walsh code. Of these, typically, 61 channels are available for use as traffic channels (to carry user data), while the other 3 are reserved for administrative channels known as the pilot channel, the paging channel, and the sync channel.
When a base station instructs a mobile station to use a particular traffic channel for a particular communication session, the base station does so by instructing the mobile station to tune to a particular one of those 64-bit Walsh-coded traffic channels. It is over that assigned traffic channel that the base station will transmit forward-link data to the mobile station during the ensuing communication session. Note that, in addition to including the forward-link channel, the traffic channel also includes a corresponding Walsh-coded reverse-link channel, over which the mobile station transmits data to the base station.
These traffic channels may be used for different types of communication, among which are second-generation (2G) voice, 2G data, third-generation (3G) voice, and 3G data. 2G voice is circuit-switched, which involves using an assigned traffic channel for the duration of a call, and is conducted at a data rate of 9.6 kilobits per second (kbps). 2G data is also circuit-switched, somewhat analogous to a dial-up connection over a telephone line between a personal computer and a modem pool, and is conducted at a data rate of 14.4 kbps. Like 2G voice, 3G voice is circuit-switched and is conducted at a data rate of 9.6 kbps. Finally, 3G data is packet-switched, which involves using a traffic channel during actual data transmission and not during so-called "downtime," and, if conducted only over a single 64-bit-Walsh-coded traffic channel (more on this below), is conducted at a data rate of 9.6 kbps.
b. 3G Data: Fundamental and Supplemental Channels
When a mobile station requests a traffic channel to engage in 3G data communication, the 64-bit-Walsh-coded forward-link channel that the base station initially assigns to the mobile station is referred to as a fundamental channel (FCH). It is often the case, however, that the mobile station requests download of more data than can be transmitted to the mobile station over the FCH in an elapsed time that will be satisfactory to the average user. In that case, assuming that all 61 of the base station's 64-bit traffic-channel Walsh codes on that sector/carrier are not occupied by other mobile stations, the base station can request that the mobile station accept data on what is known as a supplemental channel (SCH). As stated, the maximum achievable data rate using the one 64-bit Walsh code corresponding to the FCH is 9.6 kbps; however, higher data rates can be achieved on an SCH.
Like an FCH, an SCH corresponds to a single Walsh code on which the base station instructs the mobile station to receive 3G data. However, the Walsh codes used for an SCH are typically shorter in bit-length than the 64-bit Walsh codes that are used for an FCH. It is by using these shorter-bit-length Walsh codes that higher data rates are achieved on an SCH. However, the availability of these shorter-bit-length Walsh codes depends on how many of the sector's 64-bit, traffic-channel-dedicated Walsh codes are not in use at the time on the carrier in question. The reason for this is that each shorter-bit-length Walsh code corresponds directly to—and essentially occupies—a particular set of the sector/carrier's 64-bit Walsh codes.
Specifically, an SCH can achieve a data rate of 19.2 kbps by using a 32-bit Walsh code, which occupies a particular set of two of the 64-bit Walsh codes on the sector/carrier. The two 64-bit Walsh codes are occupied in the sense that, while the base station is using that 32-bit Walsh code to transmit data to a mobile station on an SCH, the base station is not able to instruct other mobile stations to use either of those two 64-bit Walsh codes.
Similarly, an SCH can achieve 38.4 kbps by using a 16-bit Walsh code, which occupies a particular set of four of the base station's 64-bit Walsh codes on that sector/carrier. As a further example, an SCH can achieve 76.8 kbps by using an 8-bit Walsh code, which occupies a particular set of eight 64-bit Walsh codes. As a final example, the SCH can achieve 153.6 kbps by using a 4-bit Walsh code, which occupies a particular set of sixteen 64-bit Walsh codes.
When a base station has enough data to warrant using an SCH for more than one mobile station on a given sector/carrier, the base station makes use of an entity known as an "RF scheduler" to place those mobile stations in a queue (the "SCH queue"). Each mobile station in the SCH queue is then sequentially given a turn to receive data over the SCH, each turn limited in duration by a base-station parameter known as the "SCH burst duration." Thus, one by one, the mobile stations in the SCH queue receive data over the SCH in bursts that each last a period of time equal to that parameter, a typical value for which is 320 milliseconds, and which is usually set by either the base-station manufacturer or by the owner/operator.
If one burst is not enough to transfer all of the data that the base station has for a given mobile station, the base station will put the mobile station back in the SCH queue and, when its turn comes up again, send another request to the mobile station to again tune to the SCH and receive another burst. The mobile station then accepts this request and receives another burst. This process repeats until the base station has transmitted all of the data to the mobile station. Thus, any periods of time during which the mobile station is waiting in the SCH queue for the base station to request that the mobile station receive another burst on the SCH will reduce the effective data rate at which the mobile station is receiving data.
Note that, in some implementations, mobile stations that are receiving data on the SCH can also receive data on the FCH. In other implementations, mobile stations that are receiving data on the SCH can not also receive data on the FCH. In still other implementations, mobile stations that are receiving data on the SCH may receive overhead data, signaling data, control data, and/or other types of administrative data on the FCH.
c. Forward-Link Transmission-Power Management
i. Forward-Link Frame Error Rate (FFER)
In CDMA networks, the transmitting power of a base station on a given sector/carrier is divided among the mobile stations to which the base station is transmitting voice data and/or packet data on traffic channels, as well as among the pilot, paging, and sync channels mentioned above. With respect to mobile stations that engage in 3G voice and 3G data communications, the amount of power that the base station allocates to the transmission to any one mobile station is based on a number of factors, one of which is known as the forward-link frame error rate (FFER). Note that, in CDMA networks, data is transmitted from the base station to the mobile station (and vice versa) in data units that are known as frames.
Some of the frames received by mobile stations contain errors as a result of imperfect transfer from the base station, while some do not. The FFER is a ratio of the number of error-containing frames that the mobile station receives to the total number of frames that the mobile station receives, over a given time period. Note that the FFER calculations often also take into account frames that are not received at all by the mobile station. And, other things being more or less equal, the more power that the base station allocates to a given mobile station, the lower the mobile station's FFER will be. In operation, a mobile station reports its FFER to the base station, and the base station adjusts the power allocated to that mobile station accordingly. This back-and-forth calibration is conducted in an attempt to keep the mobile station's FFER at or below what is deemed to be an acceptable threshold, which typically will be around 2%.
More particularly, the mobile station periodically (e.g. once every 100 or 200 frames) computes its FFER, and reports it to the base station. The base station then adjusts its transmission power accordingly for that mobile station's assigned traffic channel. If the FFER is too high with respect to what is deemed to be an acceptable threshold, the base station increases transmission power in an effort to reduce the FFER. If the FFER is below the threshold, the base station may allocate less power to that mobile station, to have more available for other mobile stations. Again, this process is conducted in an attempt to keep the mobile station's FFER at or just below the acceptable threshold, often referred to as the "FFER target."
Note that different situations may present themselves on a given sector/carrier at different times. For one, the number of mobile stations using FCHs can vary between just a few, such as 10, to a larger number, such as 30, and perhaps approach the upper bound of 61 (assuming RC3). And, as stated, the power that the base station allocates for transmission to these mobile stations can vary. In particular, variables such as terrain, weather, buildings, other mobile stations, other interference, and distance from the base station can affect the FFER that each mobile station reports, and thus the amount of power the base station allocates for each mobile station. Since base stations have a finite amount of power that they can allocate to the mobile stations on a sector/carrier, increasing the transmission power to some or all of those mobile stations (to keep their FFERs low) generally results in the base station being able to serve fewer mobile stations on that sector/carrier. That is, it reduces capacity on the sector/carrier.
ii. The Logarithmic Ratio Ec/Ior
As explained, in CDMA networks, a given base station has a finite amount of power for transmitting on each sector/carrier on which it is providing service. The base station divides this power among any active traffic channels (over which it is transmitting voice and/or packet data to mobile stations), as well as among the pilot, paging, and sync channels. Periodically, for a given sector/carrier, the base station calculates a ratio of (a) the power it is allocating for transmitting the pilot channel (the "pilot-channel power level") with (b) the power it is allocating for transmitting all (i.e. pilot, paging, sync, and traffic) channels (the "all-channel power level").
This ratio is a base-10 logarithmic one, and is known as "Ec/Ior." The pilot-channel power level is referred to as "Ec"—"energy per chip." The all-channel power level is referred to as "Ior". Ec and Ior can each be expressed in Watts (W), milliwatts (mW), or any other suitable units of measure. Note that Ec and Ior are often expressed as base-10 logarithmic ratios themselves, with respect to a reference power level of 1 mW. In that case, Ec and Ior would each typically be expressed using the unit "dBm," where "dB" indicates decibels and "m" indicates the reference power level. So, Ec can be expressed as the base-10 logarithmic ratio of the pilot-channel power level (in mW) and 1 mW. And Ior can be expressed as the base-10 logarithmic ratio of the all-channel power level (in mW) and 1 mW.
Ec/Ior is typically expressed as the base-10 logarithmic ratio of the pilot-channel power level and the all-channel power level, each of which may be measured in Watts. As such, the typical unit of measure for Ec/Ior is the decibel (dB). As an example, if a base station were allocating about 2 W (2000 mW) for the pilot channel, Ec would be about 33 dBm, calculated as 10*log((2000 mW)/(1 mW)). And if the base station were allocating a total of about 10 W (10,000 mW) for the pilot, paging, sync, and active traffic channels, Ior would be about 40 dBm, calculated as 10*log((10000 mW)/(1 mW)). In this example, Ec/Ior would be about −7 dB, calculated as 10*log((2 W)/(10 W)). Note that Ec/Ior will always be negative, as long as at least some power is allocated for any one or any combination of the paging, sync, and traffic channels.
As another example, a typical base station may have 16 W of power that it can potentially use for transmitting all channels on a sector/carrier, and may allocate 15% (2.4 W) of that for the pilot channel, 10% (1.6 W) for the paging channel, and 5% (0.8 W) for the sync channel. When that base station is not serving any mobile stations on active traffic channels on the sector/carrier, i.e. when the sector/carrier is "unloaded," Ec/Ior would be approximately −3 dB, calculated as 10*log((2.4 W)/(4.8 W)), which, then, would be about as high as Ec/Ior gets. Thus, for reference, anything close to −3 dB may be considered relatively high for Ec/Ior.
And when that same base station is at or near capacity ("fully loaded"), the 15% of its potential sector/carrier power that it is allocating for the pilot channel would shrink from being half of its power output on the sector/carrier (in the unloaded scenario) to, not surprisingly, being about 15% of its power output. This would yield an Ec/Ior of approximately −8 dB, calculated as 10*log((2.4 W)/(16 W)), which, then would be about as low as Ec/Ior gets. Thus, for reference, anything close to −8 dB may be considered relatively low for Ec/Ior. In fact, a typical base station may stop accepting new mobile stations on a sector/carrier once Ec/Ior degrades to about −8 dB. Thus, Ec/Ior can impact sector/carrier capacity as well.
When Ec/Ior is relatively high, this could mean a number of things. For example, there could be only a few mobile stations on the sector/carrier, which would lead to a higher ratio of pilot-channel power allocation to total power allocation (with relatively few traffic channels to which to allocate power). Instead or in addition, it could mean that RF conditions are favorable, such that no (or relatively few) mobile stations are experiencing a poor FFER. In that situation, there would be no (or relatively few) mobile stations inducing the base station to increase power on the traffic channels. This would tend to keep the value of Ec/Ior relatively high. And other possibilities exist as well.
When Ec/Ior is relatively low, this also could mean a number of things. For example, there could be a relatively high number of mobile stations on the sector/carrier, and thus a high number of active traffic channels contributing to a high value of Ior, and thus a low value of Ec/Ior. Instead or in addition, it could mean that RF conditions are poor (e.g., due to terrain, weather, interference, etc.); in that case, mobile stations would likely experience poor FFER, and induce the base station to increase power on the traffic channels, which would contribute to a higher Ior and thus a lower Ec/Ior. And other possibilities exist as well.

Dynamic supplemental-channel burst duration


An engine system has an engine control module for controlling a ratio of air and fuel supplied to an engine. The engine control module controls the ratio of air and fuel in relation to a fuel parameter related to the specific energy of the fuel or the stoichiometry of the combustion reaction. The fuel parameter is updated in relation to the engine's performance.

Variances in fuel composition being supplied to an internal combustion engine can affect the engine's performance. If the fuel composition changes in a manner that affects the specific energy of the fuel or the stoichiometry of the combustion reaction, the amount of fuel supplied to the engine must be adjusted to maintain the engine's performance. Some engine systems compensate for variances in the fuel being supplied to the engine by sensing the fuel composition before combustion and effecting a predetermined fuel map for the particular fuel composition. Such systems, however, are generally configured to sense changes in only specific components of the fuel, for example, to sense the ratio of one fuel to another in a composite fuel. By sensing specific components of the fuel, these systems ignore other variances. These variances may have a substantial impact on the engine's performance.
Therefore, there is a need for an engine system that compensates for changes in fuel beyond variances in specific fuel components.


The description relates to a closure for mounting in an opening in a thin wall, such as a sheet metal cabinet door, which comprises a housing and which has, at one end, a bearing support for an actuation lever and, at its other end, a lock device for the actuation lever and a fastening device such as a clamping clip therebetween. The housing has a partially spherical bearing surface with a cylindrical bore hole proceeding from it, wherein a partial ball with a first bearing for a closure drive shaft extending through the cylindrical bore hole and with a second bearing for the actuation lever is arranged in the cylindrical bore hole, and the two bearings enable a rotation of the partial ball in relation to the housing and a swiveling of the actuation lever in relation to the partial ball around an axis vertical to the closure drive shaft and to the extension of the lever.

a) Field of the Invention
The invention is directed to an electrically lockable swivel lever actuating mechanism comprising a dish which can be placed on a door leaf or the like and in which an actuation lever for a closure, such as a sash closure or bar closure, is mounted in such a way that it can be moved out of a position in which it is swiveled out of the dish and in which it enables actuation of the closure into a position in which it is swiveled into the dish and in which it does not allow actuation of the closure and in which it can be locked by an electromechanical lock device.
b) Description of the Related Art
A swivel lever actuating mechanism of the type mentioned above is already known, e.g., from EP 0 824 624 B1. The known swivel lever actuating mechanism requires a special arrangement on the door frame for proper operation. This is uneconomical for many applications.

Electrically blockable swiveling lever control

DIRAK Dieter Ramsauer Konstruktionselemente GmbH & Co. KG