A molded article formed of a composition including 100 parts by weight of at least one kind of resin selected from the group consisting of thermoplastic resins and thermosetting resins, and 0.01 parts by weight to 10,000 parts by weight of a silylated polyolefin, which is obtained by a reaction between a silicon-containing compound containing a structural unit represented by Formula (1) and a vinyl group-containing compound having a defined number average molecular weight, a derivative thereof, or a mixture of these,—Si(R1)H—Y1—  (1)wherein R1 and Y1 are defined and with the proviso that the silylated polyolefin is not obtained by a reaction between a silicon-containing compound containing a structural unit represented by Formula (1) and having two or more SH groups per molecule and a compound having 2.0 or more vinyl groups on average per molecule as the vinyl group-containing compound.

Resins represented by thermoplastic resins or thermosetting resins are used in various fields, since they are inexpensive and relatively easily molded. However, depending on the type of the resins, some resins are avoided for uses that require molded products obtained by molding the resins to have scratch resistance or soil resistance.
As an attempt at modifying properties of a resin, Patent Document 1 discloses modification of a specific low-molecular weight ethylene-based polymer which has a vinyl or vinylidene type unsaturated bond on the one terminal of the polymer. Patent Document 1 also discloses that an oligomer having a silicon-containing group, a tin-containing group, or the like is suitable as a polyvinyl chloride lubricant or a lubricant such as engineering plastic. As another attempt at modifying properties of a resin, Patent Document 2 discloses an attempt at reacting, for example, a low-molecular weight polyethylene oligomer with hydrogen silicone. In addition, Patent Document 3 discloses an attempt at applying a composition solidifying at room temperature, which contains a silicone-modified olefin wax obtained by hydrosilylating an olefin-based wax by using hydrosilicone, to cosmetics. Moreover, Patent Document 4 discloses a composition which includes a polyolefin containing terminal double bonds in a specific number and a cross-linking agent such as a silicon-containing compound.


A display system and methods provide for a large, high-resolution display that is scalable. The scalable display is made up of a number of smaller displays. The resolution of the scalable display is the combined resolutions of the smaller displays according to the vertical and horizontal layout of the smaller displays. The system includes an intermediate computer that acts as a primary client to a network computer to request and receive video data at the resolution of the scalable display. The intermediate computer reconfigures video data from a format consistent with the large, scalable display coordinates to a format consistent with the coordinates of the individual smaller displays. The intermediate computer sends reconfigured video data to the smaller displays (through clients) according to which portion of the scalable display each of the smaller displays supports.

Current display systems such as projector systems and computer monitors have limitations when it comes to the size and quality of images they can display. The limitations result in a tradeoff between the size of a display and the quality of images presented on the display. More specifically, as the display size increases, the quality of the displayed image decreases. For example, the maximum resolution of a conference room projector system is currently 1024×768 image pixels. Regardless of the size of the display being projected from the projector, the resolution remains constant. Therefore, the same number of image pixels is used to display a projected image no matter what the size of the display. An increase in the display size (e.g., by backing up the projector) results in the stretching of each image pixel to cover a larger display surface, which degrades the quality of the image being displayed.
The maximum resolution of display systems is ever-increasing. However, the relative cost increases associated with systems providing increased display resolution beyond the current level of 1024×768 is significant to the extent that such systems are prohibitively expensive for many consumers.
Accordingly, a need exists for a way to provide an inexpensive, high-resolution, and scalable display.


The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission output. The light-emitting device comprises an n-type contact layer on which an n-electrode is formed, a light-emitting layer, an n-type cladding layer formed between the light-emitting layer and the n-type contact layer. The n-type cladding layer has a structure of at least two layers including a first n-type cladding layer closer to the light-emitting layer and a second n-type cladding layer farther from the light-emitting layer than the first n-type cladding layer. The first n-type cladding layer has a Si concentration higher than that of the second n-type cladding layer, and the first n-type cladding layer has a thickness smaller than that of the second n-type cladding layer.

1. Field of the Invention
The present invention relates to a Group III nitride semiconductor light-emitting device exhibiting improved emission output.
2. Background Art
Conventionally, the following Group III nitride semiconductor light-emitting devices have been known. Japanese Patent Application Laid-Open (kokai) No. 2002-299762 discloses a laser in which an n-type cladding layer and a p-type cladding layer, each layer having a two-layer structure, are disposed respectively at the top and bottom of the core comprising an active layer and guide layers enclosing the active layer. In this laser, free carrier absorption loss is reduced by lowering the impurity concentrations of the n-type cladding layer and the p-type cladding layer closer to the active layer respectively than those of the n-type cladding layer and the p-type cladding layer farther from the active layer, to thereby reduce the threshold voltage. Each n-type cladding layer of the two-layer structure is a superlattice layer.
Japanese Patent No. 3909694 discloses a Group III nitride semiconductor light-emitting device comprising an n-type contact layer formed of n-type GaN, an n-type cladding layer formed of n-type AlGaInN, and an active layer, wherein a crack prevention layer formed of n-type GaN is provided between the n-type cladding layer and the n-type contact layer. The impurity concentration of the crack prevention layer is smaller than that of the n-type contact layer. By virtue of crack prevention layer formed of GaN, the increase of waveguide loss is suppressed.
Japanese Patent Application Laid-Open (kokai) No. 1998-4210 discloses a light-emitting device wherein a buffer layer, an n-type layer (first low-impurity concentration layer) formed of Si-doped GaN (thickness: 0.6 μm, Si concentration: 2×1018/cm3, and electron concentration: 1×1018/cm3), a high-carrier concentration n+-type layer (high-impurity concentration layer) formed of Si-doped GaN (thickness: 4.0 μm, Si concentration: 4×1018/cm3, and electron concentration: 2×1018/cm3), an n-type layer (second low-impurity concentration layer) formed of Si-doped GaN (thickness: 0.5 μm, Si concentration: 1×1018/cm3, and electron concentration: 5×1017/cm3), and a light-emitting layer are disposed in this order.
Japanese Patent Application Laid-Open (kokai) No. 2001-196702 discloses a laser diode wherein an n-type contact layer, an n-type cladding layer formed of Si-doped Al0.08Ga0.92N (thickness: 1 μm, and electron concentration: 5×1017/cm3), an n-type guide layer formed of Si-doped GaN (thickness: 100 nm, and electron concentration: 5×1017/cm3) and an active layer are provided in this order on.
Japanese Patent Application Laid-Open (kokai) No. 2001-44497 discloses a light-emitting device wherein a buffer layer, a contact layer formed of Si-doped AlGaN (thickness: 3 μm, and Si concentration: 1×1018/cm3), a cladding layer formed of Si-doped AlGaN (thickness: 1 μm, and Si concentration: 1×1018/cm3), an optical waveguide layer formed of Si-dope GaN (thickness: 0.1 μm, and Si concentration: 1×1018/cm3), and a light-emitting layer are disposed in this order.
The above patent documents disclose a light-emitting device in which a Group III nitride semiconductor was hetero-epitaxially grown on a heterogeneous substrate such as sapphire through MOCVD. In such light-emitting device, the n-type layer to bond with the light-emitting layer, has a low Si concentration of 5×1018/cm3 or less (including no impurity added) so as not to deteriorate the crystallinity of the light-emitting layer.
However, the present inventors have found that in the light-emitting device in which a Group III nitride semiconductor was homo-epitaxially grown on a Group III nitride semiconductor growth substrate, the emission output does not increase compared to the light-emitting device employing a sapphire substrate when the n-type layer to bond with the light-emitting layer has a low Si concentration of 5×1018/cm3 or less.
The present inventors assumed the reason of this as follows. When a Group III nitride semiconductor is hetero-epitaxially grown on a heterogenous substrate such as sapphire through MOCVD, high-density pits are enlarged in diameter from lower layer to the upper layer along with growth as shown in FIG. 7, due to a large lattice mismatch between the substrate and the growing Group III nitride semiconductor. The pit diameter was large, 150 nm to 200 nm and the pit density was large, 1×108/cm2 to 1×109/cm2 on the top surface of the light-emitting layer. Since the pits are filled with a p-type layer semiconductor, the distance is equivalently shortened between the n-type layer and the p-type layer to which a voltage is applied. Therefore, electrons and holes are easily recombined in the light-emitting layer even if the n-type layer to bond with the light-emitting layer has a low Si concentration of 5×1018/cm3 or less and a low conductivity. As a result, a higher emission output is obtained.
On the contrary, when a Group III nitride semiconductor is homo-epitaxially grown on a Group III nitride semiconductor growth substrate, the crystallinity of the epitaxial grown layer is improved, the pit density is low and the pit diameter is small in the light-emitting layer. When the n-type layer to bond with the light-emitting layer has a low Si concentration of 5×1018/cm3 similarly as in the light-emitting device employing a sapphire substrate, the effect of the p-type layer to fill in the above pits is reduced, the equivalent distance is lengthened between the p-type layer and the n-type layer to which a voltage is applied. Therefore, the present inventors thought that the probability of recombination of electrons and holes in the light-emitting layer is reduced, and a higher emission output cannot be obtained compared to the light-emitting device employing a sapphire substrate.


In a described example, an apparatus includes: a package substrate having a die pad configured for mounting a semiconductor die, and leads spaced from the die pad; a semiconductor die mounted on the die pad; a fuse mounted to a lead, the fuse having a fuse element coupled between a fuse cap and the lead, the fuse having a fuse body with an opening surrounding the fuse element, the fuse cap attached to the fuse body; electrical connections coupling the semiconductor die to the fuse; and mold compound covering the semiconductor die, the fuse, the electrical connections, and a portion of the package substrate, with portions of the leads exposed from the mold compound to form terminals.

For semiconductor devices produced for supplying power and for load driving applications, fuses are used to protect a load or system from an overcurrent. For example, when a power device is delivering current to a load or system, a fuse may be coupled to an output signal so that if an overcurrent condition arises, the fuse will open, stopping current to the load before the load is damaged. Discrete fuses are large passive elements that require space on a system board or module. Package on package arrangements are possible where a fuse is mounted to a packaged device, but at the cost of an increased complexity and increased package cost.

Fuses for packaged semiconductor devices


A method to resequence packets includes sequentially allocating in each source ingress adapter a packet rank to each packet received within each source ingress adapter. In each destination egress adapter, each ranked data packet is stored at a respective buffer address of an egress buffer. The respective buffer addresses of data packets received by a same source ingress adapter with a same priority level and switched through a same switching plane are linked in a same linked-list. The respective buffer addresses are preferably linked by their order of use in the egress buffer, and thus each linked-list is having a head list pointing to the oldest buffer address. The linked-lists are sorted into subsets including those linked-lists linking the respective buffer addresses of data packets received by a same source ingress adapter with a same priority level. For each subset of linked-lists, the packet ranks of the data packets stored at the buffer address pointed by the head lists of each linked-list of each subset are compared to determine the next data packet to be put in a sequence.

DWDM, which stands for Dense Wavelength Division Multiplexing, by merging onto a single optical fiber many wavelengths, is making available long-haul fiber-optic data communications links of huge aggregate capacity. Each wavelength is an independent communications channel which typically operates at OC48c i.e. 2.5 Gigabits per second or 109 bits per Second (Gbps), OC192c (10 Gbps) and in some systems at OC768c (40 Gbps). These formats and rates are part of a family available for use in optical interfaces, generally referred to as SONET, which is a standard defined by the American National Standards Institute (ANSI) of which there exists an European counterpart, mostly compatible, known as SDH (Synchronous Digital Hierarchy). Thus, at each node of a network, the data packets or cells carried on each DWDM channel must be switched, or routed, by packet-switches that process and then switch packets between different channels so as to forward them towards their final destination. If, ideally, it would be desirable to keep the processing of packets in the optical domain, without conversion to electronic form, this is still not really feasible today mainly because all packet-switches need buffering that is not yet available in an optical form. So packet-switches will continue to use electronic switching technology and buffer memories for some time to come.
However, because of the data rates as quoted above for individual DWDM channels (up to 40 Gbps) and the possibility of merging tenths, if not hundredths, of such channels onto a single fiber the throughput to handle at each network node can become enormous i.e., in a multi-Tera or 1012 bits per second range (Tbps) making buffering and switching, in the electronic domain, an extremely challenging task. If constant significant progress has been sustained, for decades, in the integration of always more logic gates and memory bits on a single ASIC (Application Specific Integrated Circuit), allowing implementation of the complex functions required to handle the data packets flowing into a node according to QoS (Quality of Service) rules unfortunately, the progress in speed and performance of the logic devices over time is comparatively slow, and now gated by the power one can afford to dissipate in a module to achieve it. Especially, the time to perform a random access into an affordable memory e.g., an imbedded RAM (Random Access Memory) in a standard CMOS (Complementary MOS) ASIC, is decreasing only slowly with time while switch ports need to interface channels having their speed quadrupling at each new generation i.e. from OC48c to OC192c and to OC768c respectively from 2.5 to 10 and 40 Gbps. For example, if a memory is 512-bit wide allowing storing or fetching, in a single write or read operation, a typical fixed-size 64-byte (8-bit byte) packet of the kind handled by a switch, this must be achieved in less than 10 Nano or 10−9 second (Ns) for a 40 Gbps channel and in practice in a few Ns only in order to take care of the necessary speed overhead needed to sustain the specified nominal channel performance while at least one store and one fetch i.e., two operations, are always necessary per packet movement. This represents, nowadays, the upper limit at which memories and CMOS technology can be cycled making the design of multi-Tbps-class switch extremely difficult with a cost-performance state-of-the-art technology such as CMOS, since it can only be operated at a speed comparable to the data rate of the channel they have to process.
Hence, to design and implement a high capacity packet-switch (i.e.: having a multi-Tbps aggregate throughput) from/to OC768c (40 Gbps), a practical architecture, often considered to overcome the above mentioned technology limitation, is a parallel packet switch (PPS) architecture. As shown on FIG. 1, it is comprised of multiple identical lower-speed packet-switches (100) operating independently and in parallel. Generally speaking, in each ingress adapter such as (110), an incoming flow of packets (120) is spread packet-by-packet by a load balancer (130) across the slower packet-switches, then recombined by a multiplexor (140) in the egress adapter e.g., (150). As seen by an arriving packet, a PPS is a single-stage packet-switch that needs to have only a fraction of the performance necessary to sustain a PPS port data rate (125). If four planes (100) are used, as shown in FIG. 1, their input ports (102) and output ports (104) need only to have one fourth of the performance that would otherwise be required to handle a full port data rate. More specifically, four independent switches, designed with OC192c ports, can be associated to offer OC768c port speed, provided that ingress and egress port-adapters (110, 150) are able to load balance and recombine the packets. This approach is well known from the art and sometimes referred to as 'Inverse Multiplexing' or 'load balancing'. Among many publications on the subject one may e.g., refer to a paper published in Proc. ICC′92, 311.1.1-311.1.5, 1992, by T. ARAMAKI et al., untitled 'Parallel "ATOM" Switch Architecture for High-Speed ATM Networks' which discusses the kind of architecture considered here.
The above scheme is also attractive because of its inherent capability to support redundancy. By placing more planes than what is strictly necessary it is possible to hot replace a defective plane without having to stop traffic. When a plane is detected as being or becoming defective ingress adapter load balancers can be instructed to skip the defective plane. When all the traffic from the defective plane has been drained out it can be removed and replaced by a new one and load balancers set back to their previous mode of operation.
Thus, if PPS is really attractive to support multi-Gbps channel speeds and more particularly OC768c switch ports it remains that this approach introduces the problem of packet re-sequencing in the egress adapter. Packets from an input port (110) may possibly arrive out of sequence in a target egress adapter (150) because the various switching paths, comprised of four planes (100) in the example of FIG. 1, do not have the same transfer delay since they run independently thus, can have different buffering delays. A discussion and proposed solutions to this problem can be found, for example, in a paper by Y. C. JUNG et al., 'Analysis of out-of-sequence problem and preventive schemes in parallel switch architecture for high-speed ATM network', published in IEE Proc.-Commun., Vol. 141, No. 1, Feb. 1994.
However, this paper does not consider the practical case where the switching planes have also to handle packets on a priority basis so as to support a Class of Service (CoS) mode of operation, a mandatory feature in all recent switches which are assumed to be capable of handling simultaneously all sorts of traffic at nodes of a single ubiquitous network handling carrier-class voice traffic as well as video distribution or just straight data file transfer. Hence, packets are processed differently by the switching planes depending on the priority tags they carry. This no longer complies with the simple FCFS (First-Come-First-Served) rule assumed by the above referenced paper and forces egress adapters to readout packets as soon as they are ready to be delivered by the switching planes after which they can be re-sequenced on a per priority basis.
Also, the above paper implicitly assumes the use of a true Time Stamp (TS) which means in practice that all port-adapters are synchronized so as packets from different sources are stamped from a common time reference which is a difficult and expensive requirement to meet.
Another difficulty with a PPS architecture stems from the fact that networks must not only support unicast traffic (one source to one destination) but also multicast traffic that is, traffic in which a source may have to send a same flow of packets to more than one destination. Video distribution and network management traffic are of this latter case (e.g., the IP suite of protocols assumes that some control packets must be broadcast). In practice, this prevents a simple numbering of packets in each source, on a per destination and per priority basis, from being used which would allow the implementation of a straightforward and inexpensive re-sequencing in each egress adapter on a per flow basis. For example, with a 64-port switch there are only 64 unicast flows (times the number of priority) for each source since there are only 64 possible destinations, a number that is easily manageable. However, there are possibly 264-65 (times the number of priority) combinations of multicast possible flows from a same source. Each flow would have to be numbered separately to keep coherency in the packet numbers received by the egress adapters (n, n+1, n+2, etc.). However, 264 is an impossible number to deal with as far as the implementation of resources is concerned.
Therefore, the numbering of packets sent from a source can only be envisaged if it ignores the destination of the packets (so as unicast and multicast traffic can be processed identically in the egress adapters). In other words, packets must be marked at source either with a true TS (Time Stamp) or, if not strictly with a TS, with a common counter (or a counter per priority), in each ingress adapter and counter(s) incremented with each departing packet irrespective of its destination(s). The second solution is obviously preferred on a cost viewpoint since it does not assume any form of synchronization between the ingress port-adapters of a switch. As stated in JUNG's paper quoted above (in section 4.1), the packet re-sequencing function is complex to implement as a result of using time stamps since it assumes that egress adapters are able to restore sequences of packets marked with numbers in ascending order i.e., n, nx, ny, etc. where the only assumption that holds is that n<nx<ny since each source, using a TS or a common counter is free to interleave the sending of packets to any combination of destinations.
Thus, there is a need for a resequencing arrangement to overcome the difficulties mentioned here above in order to make feasible a PPS architecture in which variable delays can be experienced in the individual switching planes while supporting priority classes of unicast and multicast traffic in view of the implementation of a multi-Tbps switch.
The present invention offers such complete approach and solution.

Method and system for resequencing data packets switched through a parallel packet switch

International Business Machines Corporation


A tool for drawing duct sections together is formed of a U-shaped steel section. The center pane of the U has a V-shaped notch that is slipped behind the flanges of duct sections. The V draws the duct sections together as the tool is moved into place. When the tool is in place, a cleat can be inserted over the flanges from the same direction as the tool was installed. Because of the gauge of material used to make the tool, the cleat and the tool both fit behind the flanges of the of the ducts, allowing the cleat and tool to be installed from the same side of the duct. After the cleat is in place, the tool can be removed.

Ducts made of sheet metal are fabricated in sections that require assembly. Sections of duct that are rectangular in cross-section typically include drive ends that have a return flange on opposite edges. In a typical installation, the drive ends are oriented so that the edges with return flanges are vertical. When two sections are brought together, the edges where the sheet metal is bent back to form the flanges must be brought close together so that a cleat can be slid over the flanges to hold the sections together.
Several tools are known for this purpose. One has a handle with a pair of narrow wheels mounted on it. The wheels are spaced apart along the length of the tool and are proportioned to fit in the groove between the wall of the duct and the return flange. When the wheels are in place, one the each groove, the tool can be used like a lever to draw the sections together. Another tool has a pair of jaws. See U.S. Pat. No. 5,020,202. Another is a simple tool with the V-shaped notch shown in U.S. Pat. No. 5,594,982.
This last may be effective in some settings but lacks certain advantages of the herein disclosed invention in that it cannot be used when access to one side of the duct is limited because the tool and the cleat must be installed from opposite directions. In addition this tool cannot be used effectively if it fails to draw the entire length of the drive ends of the ducts into close proximity because there is not room in the groove formed between the duct and the flange for both the tool and the cleat.


A method for testing a bidirectional communication interface including a transmitter and a receiver in an analogue front-end of a modem, comprising, transmitting a first test signal in a first frequency range with a first amplitude, from the transmitter. The method also includes receiving, at the receiver, a signal in a second frequency range with a first amplitude and transmitting a second test signal in a first frequency range with a second amplitude, from the transmitter. The method further includes receiving, at the receiver, a signal in a second frequency range with a second amplitude and determining a difference value based on the first and second amplitudes of the received signals.

The invention is based on a priority application EP05290616.1 which is hereby incorporated by reference.
The present invention relates to a bi-directional communication interface and to a method for testing it for defects.
A preferred but not exclusive application of the present invention is a DSL (digital subscriber line) modem and a method for testing it. The modem may be part of a digital subscriber line access multiplexer (DSLAM) or of a subscriber's equipment.
Alleged or real failures of DSLAMs operating in the field contribute significantly to the operating cost of a telecommunication network. Since the DSLAMs have to be installed closed to a subscriber's premises, it is not possible to group many of them at a same location. Whenever one of these DSLAMs fails or seems to fail, service personnel has to be sent out to check the DSLAM, involving considerable costs for the operator of the network.
Failures may occur in DSLAMs for various reasons. A frequent cause of failure are their power supply devices. A failure of these is easily detected from a management station of a network to which the DSLAMs are connected, since they cause the complete circuit board of the DSLAM to fail. Other failures which are not so easily detected are single component damages. These occur quite frequently with digital or analog ASICS, since these are active silicon components with a high degree of integration, the transistors of which are sensitive to overvoltages, electromagnetic interference, etc.
Another important cause of failures are line drivers and components associated to these, since they have a high power dissipation, and because they are directly connected to the telephone line (subscriber line), where overvoltages due to lightning may occur.
Another frequent cause of communication problems between DSLAM and subscriber modems are errors in the configuration of ATM and IP layers of the various network components such as switches, routers, and broadband access servers to which the DSLAM is connected on the network side. Such errors can make the DSLAM appear defective, while it is in fact only incorrectly controlled.
Similar communication problems may be caused by the subscriber's modem, if settings in the subscriber's equipment are incorrect.
In particular in the latter cases, it is quite frequent that repair staff is sent to a DSLAM because it seems defective, but in the end, the effort is in vain, because the reason for a failure is somewhere else.
Network operators are of course interested in keeping the number of such visits as low as possible. In order to meet this demand, DSLAMs are severely tested before delivery.
In a conventional pre-delivery test, all XDSL ports of a DSLAM card are connected to a reference impedance of 100 ohms. Then a set of automatic tests carried out by a processor of the DSLAM allows for detection of hardware problems in the DSLAM. As this type of test needs a known reference impedance, it cannot be carried out in the field, where telephone lines are connected to the DSLAM ports, the impedance of which is not known exactly, and on which there may be noise signals of various origins.
A paper by Acterna, LLC, Germantown, Md. entitled "Verification of ADSL Modem Interfaces as per ANSI T1.413 and ITU-T G.992.1" describes a method for testing an ADSL transmitter in which the transmitter is connected to an ADSL line simulator. In the spectrum of DMT carriers that form a conventional ADSL signal, a gap is formed by suppressing one or more carrier frequencies, so that intermodulation noise generated at the suppressed frequency can be observed without background, and a signal-noise ratio at the suppressed frequency or frequencies is obtained from measured power levels of said intermodulation noise and of an unsuppressed DMT carrier to the left or the right of the gap.
The so-called boot self-test, which is conventionally performed by a DSLAM when powered up, allows to detect some hardware problems, mainly in the digital circuitry of the DSLAM. Problems of the analog front-end of the DSLAM and of the subscriber line are not detected. Moreover, the power-up self-test cannot detect problems that arise during operation, because in order to repeat the self-test, the DSLAM would have to be re-booted, which would imply an interruption of service for all users connected to it, which cannot be tolerated.
Another conventional testing method which is useful for testing the communication between the DSLAM and a subscriber's modem implies the use of two protocol simulator circuits. For carrying out this test, the connection between the DSLAM and the subscriber's modem is interrupted using relays placed between the DSLAM and the telephone line, and the DSLAM is connected to the protocol simulator which simulates the subscriber's modem, and the subscriber's modem is connected to a DSLAM simulator. If it turns out in the test that the subscriber's modem cannot communicate with the simulator associated to it, but the DSLAM can, is shown that the DSLAM is operative, and that the defect must be at the subscriber's side. Such a test can be carried out without sending staff to the DSLAM, if the two simulators and remote-controlled relays for establishing the required connections are present at the DSLAM. The use of this technology therefore requires considerable investment.

Communication interface and testing method therefore


An image processing apparatus includes an input unit for entering a plurality of color image signals, an image processing unit for subjecting the plurality of entered color image signals to processing based upon an algorithm of a cellular neural network, and a comparison decision unit for deciding output color data based upon results of processing by the image processing unit. Since input multivalued color image data based upon the algorithm of a neural network are converted to output color image data, it is possible to obtain a high-quality output color image that is faithful to the input color image.

1. Field of the Invention
This invention relates to an image processing method and apparatus for subjecting input image data to halftoning processing. More particularly, the invention relates to an image processing method and apparatus for halftoning input color image data based upon the algorithm of a discrete-time cellular neural network (DTCNN).
2. Description of the Related Art
Converting an analog signal of a natural image to a digital signal of a digital halftone image usually is carried out by discretization in the time direction (sampling) and in the magnitude direction (quantization). Such processing results in loss of information. However, if note is taken of the fact that a natural image contains many low-frequency components and exhibits strong correlation in a spatio-temporal neighborhood, a digital halftone image approximating the natural image can be obtained by quantization image processing involving a small number of bits. Quantization image processing involving a small number of bits is processing through which a digital halftone image expressed by a smaller number of bits is formed, by utilizing information in the spatio-temporal neighborhood area, from an analog natural image or from a quantized image consisting of a large number of bits obtained by A/D-converting each gray-level value of the analog natural image independently using an A/D converter that operates on a large number of bits.
The divided pixel digital halftoning has long been used to form a pseudo-digital halftone image. This method entails reproducing the grayscale by changing the percentage of black in a neighborhood image in order to reproduce a gray-level image by a black-and-white bi-level printer or display. Examples of such methods in practical use include the dither method, in which a gray level u(x,y) of the original image is compared with a threshold value T calculated in accordance with a set rule, and the error diffusion method, in which the error between an input gray-level image value and an output halftone image is diffused to pixels that have not yet been scanned.
A well-known technique for forming a full-color image involves halftoning input color image data to a small number of bits (e.g., single-bit bi-level data) using the error diffusion method and forming the full-color image using a bi-level printer or a bi-level display device.
However, in order to obtain a halftone image that approximates an analog natural image using the dither method, the number of bits per pixel must be made fairly large. A problem encountered with the error diffusion method is the blurring of images having sharp edges, such as character images that have been closely sampled. Another problem that arises when the number of bits per pixel is increased is the occurrence of a false contour which undergoes no change whatsoever only in a certain neighborhood.


An inverter of a winding unit is controlled by preparing a plurality of kinds of acceleration instructions having different speed characteristics in the central control apparatus, selecting the sharpest acceleration instruction within the limit determined by generation of slip between drum and package, type of yarn and tension of yarn, etc. for each winding unit and transmitting the digital information thereof to the sequencer of the winding unit.

1. Field of the Invention
The present invention relates to a winding speed control method of an automatic winder.
2. Related Art Statement
In an automatic winder comprising a plurality of winding units, each winding unit is provided with an inverter which controls the starting, the stopping and the rotating speed of a drum for driving a package to thereby control the speed at which yarn is wound on the package. In a conventional automatic winder, the acceleration of the drum during the start up time of the winding unit is initially fixed and cannot be changed. It is assumed that by increasing the acceleration of the drum at the start up time as sharply as possible, the start up time may be shortened and the efficiency of the machine may be improved.

Winding speed control method of automatic winder


A liquid ejecting apparatus includes a modulation circuit that performs pulse modulation on an original signal to generate a modulated signal; a pair of transistors that generate an amplified modulated signal amplified from the modulated signal; a lowpass filter that smoothes the amplified modulated signal to generate a driving signal; an AD converter that performs AD conversion on a voltage based on the driving signal; a piezoelectric element that is displaced to eject a liquid when the driving signal is applied. The AD converter includes at least K (where K is an integer equal to or greater than 2) capacitors and a controller that causes the K capacitors to sample voltages based on the driving signal at temporally different timings, and subsequently equalizes the voltages and outputs a result of the AD conversion based on the equalized voltage.

1. Technical Field
The present invention relates to a liquid ejecting apparatus.
2. Related Art
Ink jet printers using piezoelectric elements (for example, piezo elements) as actuators are known as ink jet printers that print images or documents by ejecting ink. The piezoelectric elements are installed to correspond to a plurality of nozzles in a head unit and are each driven according to driving signals. Accordingly, predetermined amounts of ink (liquid) are ejected from the nozzles at predetermined timings to form dots.
In such printers, high productivity is necessarily realized due to high speed and high image quality. As a technology for realizing high productivity, for example, a technology for arranging a plurality of nozzles across a larger width than a target product (printing sheet) has been proposed (see JP-A-2011-121249).
When this technology is used to attempt an improvement in productivity, many nozzles and piezoelectric elements are necessary with an increase in the resolution of a target product. In order to drive the piezoelectric elements, a relatively high voltage (for example, about 40 volts) is necessary. For this reason, it is necessary to perform power amplification on driving signals using amplifiers, and then to supply the driving signals to many piezoelectric elements simultaneously and concurrently. A class D amplification circuit which is smaller in power loss and is miniaturized more easily than analog power amplification of class AB has been proposed as such an amplifier (see JP-A-2007-168172).
Specifically, the class D amplification circuit supplying driving signals to the piezoelectric elements is configured such that original signals which are sources of driving signals are pulse-modified by a modulation circuit to generate modulated signals, the modulated signals are subjected to digital amplification (class D amplification) to generate amplified modulated signals, and the amplified modulated signals are smoothed by a lowpass filter to output the amplified modulated signals as the driving signals.
A piezoelectric element is a capacitive load such as a capacitor from the viewpoint of electricity. For this reason, when the plurality of piezoelectric elements are driven, load characteristics vary according to the number of driven piezoelectric elements. Therefore, a technology for providing a plurality of feedback circuits with different frequency characteristics and selecting and switching the feedback circuits according to the number of piezoelectric elements to be driven in a configuration in which driving signals are feedback for class D amplification has been proposed (see JP-A-2011-224784).
Incidentally, in the class D amplification, there is a demand for monitoring the driving signals as in the feedback circuits. The driving signals are signals obtained by smoothing the amplified modulated signals subjected to class D amplification by a lowpass filter. However, the driving signals are not completely smoothed and ripples remain. For this reason, there is a problem in that it is difficult to accurately obtain the voltages of signals to be monitored.


A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

1. Field of the Invention
The field of the present invention relates to the preparation of thin film semiconductor devices. More particularly, the present invention relates to electrodeposition of copper-indium-gallium-diselenide films for solar cells.
2. Description of the Related Art
Chalcopyrite ternary thin films of copper-indium-diselenide (CuInSe.sub.2) and copper-indium-gallium-diselenide (CuIn.sub.1-x Ga.sub.x Se.sub.2), both of which are generically referred to as Cu(In,Ga)Se.sub.2, CIGS, or simply CIS, have become the subject of considerable interest and study for semiconductor devices in recent years. Sulphur can also be, and sometimes is, substituted for selenium, so the compound is sometimes also referred to even more generically as Cu(In,Ga)(Se,S).sub.2 so as to encompass all of these possible combinations. These devices are also referred to as I-III-VI.sub.2 devices according to their constituent elemental groups.
These devices are of particular interest for photovoltaic device or solar cell absorber applications. For photovoltaic applications, the p-type CIGS layer is combined with an n-type CdS layer to form a p-n heterojunction CdS/CIGS device. The direct energy gap of CIGS results in a large optical absorption coefficient, which in turn permits the use of thin layers on the order of 1-2 .mu.m. An additional advantage of CIGS devices is their long-term stability.
Various methods have been reported for fabricating CIGS thin films. Some of the earliest techniques involved heating copper and indium on a substrate in the presence of a selenium-containing gas, including H.sub.2 Se. The heating of copper and indium films in the presence of a selenium-containing gas is known as selenization. One drawback to selenizing with H.sub.2 Se is that H.sub.2 Se gas is highly toxic, thus presenting serious hazards to humans in large scale production environments.
In U.S. Pat. No. 5,045,409, Eberspacher et al. disclose depositing copper and indium films by magnetron sputtering, and depositing a selenium film by thermal evaporation, followed by heating in the presence of various gases. Other methods for producing CIS films have included Molecular Beam Epitaxy, electrodeposition either in single or multiple steps, and vapor deposition of single crystal and polycrystalline films.
Although vapor deposition techniques have been used to yield solar cells with efficiencies as high as seventeen percent (17%), vapor deposition is costly. Accordingly, solar cells made by vapor deposition have generally been limited to devices for laboratory experimentation, and are not suitable for large scale production. On the other hand, thin film solar cells made by electrodeposition techniques are generally much less expensive. However, solar cells produced by electrodeposition generally suffer from low efficiencies. For example, in Solar Cells with Improved Efficiency Based on Electrodeposited Copper Indium Diselenide Thin Films, ADVANCED MATERIALS, Vol. 6 No. 5 (1994), Guillemoles et al. report solar cells prepared by electrodeposition with efficiencies on the order of 5.6%.

Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells


A manual dispenser dispenses a liquid substance by pressure, and automatically closes in the absence of pressure. The dispenser has a push button for controlling an aerosol valve or pump, or a stopper for a receptacle having flexible, compressible walls. The dispenser is characterized in that it comprises a nozzle (3) with an elastically deformable distribution slot (7) which nozzle is integrated by molding into a relatively rigid body (1).

The present invention relates to the packaging industry and to the plastics moulding industry.
It is aimed more specifically at the dispensing of fluid substances: liquids, emulsions, gels, particularly cosmetic or pharmaceutical, conveyed by pressure into a discharge duct the outlet of which is closed automatically in the absence of pressure, so as to avoid deterioration of the substance remaining in the duct and to ensure that the discharge orifice remains clean. It relates most specifically to closure means employing an elastic diaphragm pierced with a slit.
At rest, the walls of the slit press elastically against one another and close the duct. When a dispensing push-button controlling an aerosol valve or a pump is pressed, or if pressure is applied to a container with compressible flexible walls, such as a tube or pouch, sealed by a stopper equipped with such a duct, the substance ejected under pressure parts the walls or lips of the slit so that it can be dispensed. As soon as the pressure ceases, the slit closes back up and closes the discharge duct.
Such a self-closing device is described particularly in the BOUET French patent number 1 351 565 in its application to flexible bottles or tubes.
According to this patent, the dispensing slit is cut in a thin wall that closes the neck and is formed at the time of moulding from the material of the container. When this device needs to be adapted to a push-button or to a stopper that is screwed on or forcibly inserted into or onto the neck of a container, then a material that can withstand the mechanical stresses of fitting and retaining the stopper or of actuating the push-button must be used to form the body. Such material does not satisfy the elasticity requirements of the dispensing slit. It is therefore necessary to use two different materials for the slit and for the body. It has already been proposed, for example in documents EP 0 743 259 A and 0 442 379 A, for a container stopper comprising a slit membrane to be produced by a two-shot injection-moulding method. However, a slit diaphragm such as this needs a very special and wide configuration of stopper which is well suited to the dispensing of highly viscous liquids or pastes (such as a toothpaste or gel) but is rather ill-suited to the dispensing of more fluid substances, especially those whose release is usually controlled by a system of the aerosol valve type, for which a dispensing nozzle that consists of an elongate tubular passage is preferred. In the prior art, a nozzle of this kind is illustrated by document GB 1 472 178, and consists of a passage moulded in the body transversely to an axial central duct (sitting on the hollow pump- or valve-actuating stem), the entire assembly being produced by moulding in a body which also has an upper surface for pressing on and a peripheral skirt.
If there is the desire to equip such a nozzle with a self-closing slit, the solution of producing a slit diaphragm by two-shot injection moulding is not suitable, as has been seen. From another viewpoint, if the nozzle is made separately and as a single piece with an end part that comprises the self-closing slit made of a material that is flexible enough for this, then the problem of incorporating the slit-comprising nozzle into the body of the container arises. The problem is that if such a nozzle is simply inserted into a housing in the body, then the retaining forces need to be higher than the forces tending to expel the nozzle under the pressure of the fluid substance being dispensed. This leads to the need for precise dimensioning of the nozzle and of the housing in order to ensure correct retention without deformation of the nozzle. It is difficult to achieve such precision under mass-production industrial moulding conditions, particularly given gradual mould wear.
The object of the invention is a self-closing dispenser which does not exhibit such drawbacks and lends itself well to industrial manufacture at competitive cost.
The subject of the invention is a manual dispenser of fluid substances using pressure, which closes automatically in the absence of pressure, having a push-button for controlling an aerosol valve or pump type, or a stopper for a compressible flexible-walled container type, of the kind which has an elastically deformable self-closing dispensing slit incorporated by moulding into a relatively rigid body, characterized in that the slit is made at one end of a one-piece nozzle made up of an elongate tubular element made of a relatively flexible and elastic material, which is incorporated by moulding into the said body.
The tubular element advantageously ends in a wall through which the said self-closing slit partially passes; advantageously, this wall has a dome-shaped interior face, and it may have a flat exterior face.
It is advantageous for the slit to be formed in a slit bulging head of the nozzle, which head is clear of the body and extends the shape thereof, so as to leave the material of the nozzle free to act elastically without the constraint of being closely surrounded by the rigid material of the body.
Advantageously, the body has an axial duct into which the nozzle or an extension thereof opens non-axially; the body also has an upper surface for pressing on and a peripheral skirt, and is designed to have an axial direction of release from the mould.
As a preference, the nozzle points upwards and is designed so as to make an obtuse angle with the said axial direction, so as to make moulding easier, as will be seen later.
In practice, the nozzle may be made of an elastomer of the ethylene-vinyl acetate type, and the body may be made of a polymer of the polypropylene type.
Another subject of the invention is a method of manufacturing such a dispenser, characterized in that the nozzle is first moulded on its own, and then transferred into the body mould so that it can be incorporated into the body when the dispenser is moulded, and the end of the nozzle of the dispenser thus formed is then slit, either in the mould or as a separate operation.


A semiconductor integrated circuit device includes first to third memory cell units, first and second bit lines, and first and second source lines. The first to third memory cell units include memory cell transistors serially connected between selection transistors. The first bit line is commonly connected to one end of the current path of the first memory cell unit and one end of the current path of the second memory cell unit. The second bit line is connected to one end of the current path of the third memory cell unit. The first source line is connected to the other end of the current path of the first memory cell unit. The second source line is commonly connected to the other end of the current path of the second memory cell unit and the other end of the current path of the third memory cell unit.

1. Field of the Invention
This invention relates to a semiconductor integrated circuit device and more particularly to a semiconductor integrated circuit device having an electrically rewritable nonvolatile semiconductor memory device.
2. Description of the Related Art
A nonvolatile semiconductor memory device, particularly a NAND flash memory, is further miniaturized. Recently, a memory cell having an area of 2F×2F=4F2, where the minimum processing size is F, has been developed (Reference Document: Tsuneyuki Miyake, "Process leading to 16-Gbit NAND Flash, Realization of Ultimate Cell of 4F2 with 50 nm by TOSHIBA" NIKKEI Micro Devices, August, 2003, pp 57 to 62).
In a memory cell array in which the memory cells described above are integrated, the arrangement pitch of the element regions is 2F. Therefore, the arrangement pitch of bit lines becomes 2F and the arrangement pitch of bit line contacts which connect the bit lines to the diffusion layers of block selection transistors is also set to 2F.
However, unlike the element region pattern or bit line pattern, the bit line contact pattern is not a line pattern, but a hole pattern. The resolution of the hole pattern is lower than that of the line pattern and an error caused at the etching time is larger. Therefore, when memory cells having bit line contacts arranged at the pitch 2F are formed, the arrangement becomes extremely tight from a technical viewpoint.
Therefore, memory cells having bit line contacts arranged at twice the above pitch are described in Jpn. Pat. Appln. KOKAI Publication No. 2005-56989. In this specification, memory cells used in this type of memory cell array are called double-pitch cells.


A computing system that supports the use of multiple displays in display mirroring mode and extended display mode may automatically determine a display mode in which to configure the system (with little or no user input) based on various characteristics of the displays in the system. For example, the system may determine that a television, projector, or other presentation type display is connected in the system, and in response, may determine that the system should be configured in a display mirroring mode, rather than in an extended display mode. The system may also determine that the presentation type display is the preferred display, and may render image content in a best (or preferred) mode for that display using its native resolution, aspect ratio or color profile. The system may then scale the rendered image content for display on other (non-preferred) displays, such as an internal display, without re-rendering it.

Technical Field
This disclosure relates generally to the use of video displays, and more specifically to the display of images on multiple devices.
Description of the Related Art
In some situations, there is a need to display the same images concurrently on multiple displays of a computer system. For example, consider a system with a computing device having an internal display and an external interface to which an external display is coupled. This system may be used for a presentation (e.g., for a software demonstration to an audience in a large room). The presenter may wish to view the demonstration on the device's internal display while the audience views the demonstration on the external display. The presenter may configure the system to operate in this mode and/or select the resolution and/or other parameters for rendering the image content on the internal and/or external displays by explicitly specifying multiple display options using multiple user interface mechanisms.
In other situations, there may be a need to display different images on multiple displays of a computer system. For example, a system with a computing device having an internal display and an external interface to which an external display is coupled may be used by a single user running an application that displays large amounts of information. The user may wish to view the information across both the internal and the external displays (e.g., in an extended desktop mode). The user may configure the system to operate in this mode and/or select the resolution and/or other parameters for rendering different portions of the image content on the internal or external displays by explicitly specifying multiple display options using multiple user interface mechanisms.

This patent is subject to a terminal disclaimer.


An anti-aging composition containing: (a) at least one first active ingredient chosen from phloretin and its derivatives; (b) at least one second active ingredient chosen from cinnamic acid, resveratrol, retinol, ascorbic acid, tocopherol, and their derivatives; and (c) at least one non-aqueous organic solvent, with the proviso that if the composition contains ascorbic acid, water is present as a co-solvent.

Aging skin is the result of more than just chronological age. Skin is exposed to environmental elements that cause radicals to form in the skin. These radicals attack the collagen layer of the skin and break it down, causing lines and wrinkles to appear. This process is commonly called photo-aging. Diseases and disorders of skin that also may result from radical damage include skin cancer, skin irritation or inflammation, dermatitis, allergy, psoriasis, acne, eczema, rosacea.
Application of antioxidants can help prevent radical-induced damage in skin. Applying Vitamin C, for example, to the skin can provide antioxidant protection, prevent photo-aging, and stimulate collagen production. However, not all Vitamin C formulations produce these benefits due to lack of stability.
The present invention is thus directed to a composition and process for inhibiting radical-induced damage to skin which does not suffer from conventional stability issues.

Anti-aging composition containing phloretin


A semiconductor device is provided having an insulated gate type transistor comprising a semiconductor body. First and second semiconductor regions define source and drain regions buried in the semiconductor body. A third semiconductor region defines a channel region disposed between the first and second semiconductor regions. A recess is provided having a bottom surface and a side surface. The recess is formed in the semiconductor body and is provided adjacent to the third semiconductor region. An insulating film is formed on the entire side surface of the recess, and a gate electrode comprising a metallic region is provided in the recess. The first, second and third regions, the gate electrode region and the insulating film are juxtaposed in a direction along a main face of the semiconductor body. The insulating film and the gate electrode region substantially occupy the recess.

1. Field of the Invention
This invention relates to a semiconductor integrated circuit device such as memory, photoelectric converting device, signal processing device, etc. to be mounted on various electronic instruments, particularly to an insulated gate type transistor thereof.
2. Related Background Art
In recent years, as an effort for higher integration, it has been desired to apply practically finely worked functional devices such as development of MOS transistor with the gate length of submicron order, etc.
FIG. 1 to FIG.3 are schematic cross-sectional views showing the structure of the MOS transistor of the prior art. FIG. 1 is N-MOS transistor with a single drain structure having a gate 201, an oxidized film 202, a source 203 and a drain 204, which is the simplest structure, and its production process is also simple. However, with the progress of finer formation of the device, when the gate length becomes 1.2 .mu.m or less, deterioration of the actuation of the MOS transistor will occur. FIG. 2 has the low concentration regions 205 and 206 provided for relaxing the electrical field between the source and the drain for preventing it, and is called the LDD (lightly doped drain) structured. Further, as the LSI for DRAM which is most progressed in finer formation, a thin Transistor cell (TTC) as shown in FIG. 3 has been proposed. TTC has a groove provided in the semiconductor substrate 211, and a transistor and a capacitor are formed at the same time. More specifically, it has a gate oxidized film 213, with the channel portion 214 being located on the side face of the gate oxidized film. In the groove at the lower part of the gate 212, a polycrystalline Si 215 is filled and deposited to form an electrode of the capacitor for memory, with its surface being oxidized to form an inductor film 216 for capacitor. The buried source 217 is formed at the upper part of the polycrystalline Si 216. Further, it is equipped with the word line 218 with the polycrystalline Si, the n+ diffusion layer as the drain and pit line, and is separated electrically through the separation oxidized film 220 from the adjacent cells. On the insulation film 221, the interlayer insulation film 222 are respectively formed the wiring patterns 223 and 224. The TTC, having the MOS transistor and capacitor formed in the vertical direction, has such advantages that it is smaller in area, and also erroneous actuation due to influence of .alpha.-ray will occur with difficulty, and further it is free from parasitic transistor. Region 219 has a relatively low concentration of impurities and is provided for relaxing the electrical field between the source and drain regions.
However, the groove type transistor cell as described above has still room to be improved in the following points.
1) In the semiconductor device shown in FIG. 3, only with respect to the transistor portion, the aspect ratio (groove depth/opening diameter) is about 2, and therefore the yield is lowered by the defect which occurs by Si etching, and further uniform formation of the insulation film of good quality can be formed with difficulty in the groove, thus posing a problem in reliability.
2) Further, polycrystalline silicon which is the control electrode member to be generally used in TTC cannot make the resistivity about 1 m.OMEGA.cm or lower even if an impurity may be diffused to the maximum extent, whereby it is impossible to make smaller the propagation, delay time which determine the speed of the transistor. Even if a silicide (Si metal alloy) may be employed in place of polycrystalline silicon, the resistivity is about 100 to 200 .mu..OMEGA.cm and no transistor of high speed, high yield and high reliability could be obtained.
3) Further, generally speaking, the control electrode is deposited on the semiconductor device surface uniformly and therefore the surface of the control electrode reflects the uneveness itself of the groove, as opposite to flattening. Shortly speaking, for maintaining of high reliability of the wiring deposited on the control electrode, an insulation film must be attached on the control electrode, and flattening effected according to the method of etch-back. This method is a method which leaves the resist only at the concavity thickly and cuts simultaneously the insulation film at the resist concavity in rf plasma, and since the influence of rf exerted on MOS transistor is extremely great, the risk of impairing the yield, reliability has been very great.

Semiconductor device having improved vertical insulated gate type transistor


Organic polymer substrates, for example polyolefins such as polypropylene, can be made flame retardant by the incorporation of a mixture of (i) at least one melamine based flame retardant and (ii) at least one flame retardant selected from the group consisting of the organohalogen and phosphorus containing flame retardants. Further optional flame retardants include antimony compounds and sterically hindered amines.

U.S. Pat. No. 4,504,611 teaches flame retardant polyamide comprising zinc borate, melamine cyanurate and certain organohalogens.
JP 54113647 discloses flame retardant polyamide comprising melamine cyanurate and DBDPO.
GB 2085898 discloses flame retardant polyolefin comprising aromatic bromo hydrocarbon (DBDPO), an antimony or bismuth compound, an organic compound, and a triazine derivative (e.g. melamine).
JP 57070152 teaches flame retardant epoxy resins which contain antimony trioxide, an orgaonobromine compound and a melamine-cyanuric acid adduct.
JP 58101128 teaches flame retardant epoxy resin, phenol resin, thermoset polyester resin or polyurethane resin, which contain antimony trioxide, organohalogen compound, melamine-cyanuric acid product, melamine-phosphoric acid product and melamine-molybdic acid product.
U.S. Pat. No. 5,356,568 teaches flame retardant coatings that comprise phosphorus-containing material (e.g. melamine phosphate) and a halogen-containing material (e.g. chlorinated paraffin).
JP 10176095 discloses flame retardant polystyrene comprising organohalogen compounds and ammonium polyphosphates and/or triazine phosphates (e.g. melamine phosphate) and a drip-proof agent.
It has been found that polymers with good flame retardant properties, for example polyolefins, are prepared when a melamine based flame retardant is added thereto together with an organohalogen flame retardant or a phosphorus containing flame retardant.


Artificial aspiration methods and systems for increasing engine efficiency and or power. The methods include determining an engine operation status, determining an artificial aspiration goal value based on the engine operating status, determining an artificial aspiration system configuration based on the artificial aspiration goal value and the engine operating status, and configuring the artificial aspiration system to obtain the determined artificial aspiration system configuration. The system includes a plurality of sensors for sensing characteristics of an operating engine, and an artificial aspiration control unit comprising a processor connected to receive the sensed characteristics of the engine. On one example, the processor is configured to determine the engine operating status, determine an artificial aspiration goal value based on the engine operating status, determine an artificial aspiration system configuration based on the artificial aspiration goal value and the engine operating status, and configure the artificial aspiration system to obtain the determined artificial aspiration system configuration.

Presently, the power-to-weight ratio of internal combustion engines can be improved using artificial aspiration to supplement the engine air intake manifold pressure. Traditional artificial aspiration methods include driving components directly from the engine or from exhaust pressure. When the engine is operating at low speeds or the exhaust temperature is not at design temperature, there may be insufficient artificial aspiration to operate the engine efficiently. Accordingly, there is a need and desire for improved artificial aspiration methods and systems.


A decorative tire cover for covering a spare tire while displaying a photograph or artwork from within. The photograph or artwork is enclosed in an environment that is substantially waterproof, yet is easily accessible when the photograph or artwork is to be replaced. The decorative tire cover is defined by a flexible tire cover having a first circular opening formed in one side thereof for enabling a photograph or artwork situated inside thereof to be visible to someone outside the flexible tire cover. An opposing side of the flexible tire cover has a second circular opening formed therein for enabling the flexible tire cover to be wrapped around a spare tire. A transparent protective cover is attached to an inner surface of flexible tire cover overlapping the first circular opening for protecting the photograph or artwork from weather damage. Removably attached to the protective cover is an inner annular ring for confining a photograph or artwork to a fixed region adjacent the protective cover.

1. Field of the Invention
The present invention relates to a vehicle wheel cover and more particularly to a vehicle wheel cover which may present decorative or informative indicia thereon.
2. Description of Related Art
The use of vehicle tire covers is well known in the prior art. One well known accessory is a flexible tire cover for a spare tire which is carried externally on the rear of a vehicle in an exposed manner. These covers are provided to protect such spare wheels from the elements. To add aesthetic value to such covers, readily visible personalized messages or artwork are sometimes applied thereto. However, none of the known vehicle tire covers provide for a tire cover which displays a photograph or other artwork in a substantially waterproof, yet easily accessible enclosure.
U.S. Pat. No. 5,316,376 discloses a decorative wheel cover that is attached to a wheel rim. The cover has a magnifying lens that is placed over a disk bearing decorative indicia or artwork. However, this cover is not waterproof. Also, this cover attaches only to the wheel rim and does not cover the entire spare tire.
U.S. Pat. No. 4,214,683 discloses an illuminated wheel cover which is mounted on an exposed spare vehicle wheel. This cover has an indicia bearing disk that is attached to a flexible cover which is placed over the entire spare tire. However, this cover does not provide any protection against the elements for the indicia bearing disk.
Further less relevant examples of indicia bearing wheel covers include U.S. Pat. Nos. 2,632,268; 2,072,490; 1,943,237; and 1,879,761.
Therefore, the present invention attempts to overcome the deficiencies in the prior art by providing a vehicle tire cover for attachment to a spare vehicle tire which may be utilized for displaying photographs or other artwork in a substantially waterproof, yet easily accessible environment.
None of the above inventions and patents, taken either singly or in combination, is seen to describe the instant invention as claimed.


Provided is a container having a container body, a bail attached to the container body, and a flexible band attached to a rear of the container body. The flexible band has a first end attached to the rear of the container proximate a top of the rear and a second end attached to the rear of the container body proximate a bottom of the rear. The flexible band is movable between a first position spaced a first distance from the rear, a second position spaced a second distance from the rear less than the first distance to allow the container body and the bail to be grasped at the rear without interference by the flexible band, and a third position spaced a third distance from the rear greater than the first distance to provide space for a user's hand between the rear of the container body and the flexible band.

Containers can be provided for holding a coating material, such as paint. The containers can include a handle for a painter to hold. The container can be smaller than a traditional paint container, such as a paint can, to provide a lighter weight and easier to hold container for the painter.


An embodiment of the present invention is a technique to simulate performance of a multi-core system. A micro-architecture effect is estimated from each core in the multi-core system. A model of a memory hierarchy associated with each core is simulated. The simulated model of the memory hierarchy is superpositioned on the estimated micro-architecture effect to produce a performance figure for the multi-core system.

1. Field of the Invention
Embodiments of the invention relate to the field of computer performance, and more specifically, to performance simulation.
2. Description of Related Art
Performance simulations on processor systems are useful to evaluate design alternatives. Complex architectures of modern microprocessors typically require extensive simulation or modeling to accurately characterize the system performance. In the area of multiple cores or multiprocessor systems, such a simulation has become a challenge due to the complexity caused by interactions between the multiple cores or processors and memory subsystem usage.
Existing techniques to simulate performance of multi-core or multi-processor systems have a number of drawbacks. Techniques focusing on accurately simulating the micro-architecture features are very slow. To reduce simulation time, there are techniques that use random sampling or characterization-based sampling. Although these techniques may be effective for single-threaded workloads simulation, they may not be efficient for multi-threaded or multi-core environments. Other techniques such as analytical models and reduced input sets require a formal proof or validation of each model, and therefore are not appropriate for large design space exploration. In addition, they may not be accurate.

Performance simulation of multiprocessor systems


A hearing protection device readily insertable and removable from temple arms of eye glasses of varying size, width, angles and flanges, comprising a stiff but bendable vinyl tube, a connector cord, and an earplug. The tube is positioned around the temple bar of glasses past where the temple bar comes into contact with the user's ear when the glasses are worn. The device is held in position by pressure points of contact between the internal surface of the tube and points along the arm of glasses. Once mounted, and glasses worn, the sensation of the vinyl tube simulates the eyeglass arms themselves, and the earplug is conveniently positioned behind and outside of the user's line of vision. The earplug may be inserted and removed from the user's ears as desired given changing noise levels in the user's environment.

There is a growing awareness for the importance of hearing protection through use of earplugs in high-noise environments. The need for ear protection arises in a variety of situations ranging from work-related noise (factories, chainsaws, lawn mowers), to entertainment and recreational venues, such as concerts, fireworks displays, large sports events, hunting, or target practice. Often in these situations, the earplug user is also wearing glasses—whether prescription glasses, sport glasses, sunglasses, or safety glasses. Given fashion trends, eyeglass designs now come in a wide range and variety—with some temple bars still in the traditional angled or bent shape for retention such as when the user bends over; while many other designs, including many types of safety glasses, are designed to have straight temple bars that also apply pressure to the sides of the user's head for retention. Some temple bars still reflect the traditional narrow size and design with minor flange at the distal end; other commonly seen designs have wider arms and/or large, flared/flanged ends for fashion purposes and/or to apply additional pressure against the user's head. Recent designs in safety glasses give them the appearance of sport glasses.
There are several earplug systems and devices in the prior art that may be used in combination with glasses. For example, U.S. Pat. No. 6,340,227 discloses an ear plug system either removably connected to the distal end of the arms of glasses or permanently positioned within the arms, wherein an ear plug is attached to a cord that is stored within a recoil device. The user draws the cord stored within the recoil device and thereafter inserts the earplug into the ear. The system is attached to the arm glasses by a connector designed to snugly fit about the distal end of the arms of glasses.
U.S. Pat. No. 6,082,855 discloses an attachment for safety eyeglasses including a mount on the eyeglass temple bar, an earplug, and a coupling wire wound into a tight helix for storage between the rear of the outer ear and the skull to minimize earplug motion when the earplug is not inserted into the ear canal. The mount is a tube of elastomeric material (thermoplastic rubber) designed with a larger front end hole and a smaller rear end hole for expansion over the temple bar by elastic stretching resulting in high friction holding the mount to the temple bar. The elastic tube tightly grips the temple bar to avoid rattling.
U.S. Pat. No. 5,541,677 discloses a vision-hearing protection device including a retraction feature wherein earplugs may be quickly pulled in toward a retainer for storage. The ends of the device are designed to resiliently stretch over and frictionally engage the arms of the glasses.
Common to each of these devices is the need for a user to apply fine motor control to insert the device through stretching of elastomeric or rubberized materials onto and over the distal ends of the arms of glasses. Secure mounting of the devices is not possible unless the distal ends of the glasses are shaped such that the mounting portions of the device can fit tightly around them. The connector and mount systems in the prior art are designed for snug attachment and high friction connection over the distal ends of the eyeglass arms, thereby necessitating fine motor manual manipulation, time, and effort, to stretch and adequately position the systems onto the glasses. The systems cannot be mounted and removed on different shaped ends of eyeglass arms, including large, flange-ended eyeglass arms. They present a particular challenge for mounting onto glasses when wearing gloves. Given the need for the devices to snugly fit around and against the distal ends of arms of glasses for high-friction contact, the systems are severely limited in the type, shape and width of arms upon which they can be mounted and are not easy to mount.
Accordingly, there is an unmet need in the prior art for an earplug device to be used in combination with eyeglasses that is quick and simple to insert and remove from the temple bars of eyeglasses of various designs, angles, shapes and widths, yet which is secure, comfortable, and hardly noticeable to the wearer of the device.

Universal temple bar hearing protection device


A low void pressure swing adsorption system wherein flow movement and pressure pulse are influenced from the same source comprised of at least one hermetically sealed vessel containing an adsorbent bed with an inlet coupled to the adsorbent bed by way of an inlet header and an outlet coupled to the adsorbent bed by way of an outlet header. Void volume of the inlet and outlet headers can be limited to less than 20% of the adsorbent bed volume, preferably to less than 10%, and most preferably to less than 5%, by mounting high pressure source(s) and/or low pressure sink(s) proximate to, or nearly proximate to, the adsorbent bed/vessel. Low void volumes and reduced cycle times may be achieved in all bed configurations, including flat header beds, segmented beds, and vertical beds. Radial beds may be configured so that the void volume of the inlet and outlet headers is less than 50% of the volume of the radial adsorbent bed, preferably to less than 20%, and most preferably to less than 10%.

Adsorption processes have been widely used for the separation and purification of gases. In recent years, pressure swing adsorption (PSA) systems including vacuum PSA (VPSA) have been developed for enhanced gas separation operations, particularly for the commercial production of oxygen and/or nitrogen from air. The PSA process consists of basic steps such as adsorption-desorption. Air or another gas mixture is fed into the system, which includes one or more vessels, each with an adsorbent bed, to an upper adsorption pressure. The adsorbent beds (a.k.a. adsorbers) selectively adsorb the more readily adsorbable component(s) of the air or gas mixture. The less readily adsorbable component(s) passes through the adsorber. The vessel is then depressurized to a lower desorption pressure for the desorption of the more readily adsorbable component(s) from the adsorber(s), which is then repressurized to the upper adsorption pressure as cyclic operation is continued.
In order to improve performance, conventional PSA systems typically use two or more vessels in parallel with directional valves to connect the vessels in alternating sequence to the compressor or vacuum pump. Further, to fully utilize the adsorbent material employed, PSA systems require uniform flow of gas across the adsorbent vessel(s) throughout the PSA processing cycle. In addition, void volume and pressure drops in the PSA vessel entrance and exit regions (i.e., the inlets and outlets and their associated headers) have adverse effects on the process performance of a PSA system and must be minimized in practical commercial operations. Ruthven, et al. disclose a method for estimating the magnitude of effects by void volume via an equilibrium model. More specifically, they examined the effects of void volume in a simple four-step cycle with a linear isotherm, and showed that large void volume could significantly reduce recovery. Unfortunately, the study applies to an idealized situation without consideration of mass transfer resistance, heat effect and isotherm non-linearity. In addition, only production end void volume and a simple cycle are investigated. U.S. Pat. No. 5,968,233 to Rouge, et al. discloses a similar conclusion of void effects for a more realistic air separation cycle. However, the patent focuses only on production end void volume. More importantly, the patent looks for an optimum void volume for oxygen cost, rather than a minimum void volume.
The effect of void volume varies depending on the location of the void (relative to the adsorbent) and on which step of the cycle the void is considered. For example, the light product gas in the production end void space serves, to some extent, as a purge gas during a countercurrent regeneration step; however, this purge is less effective than a controlled purge at low pressure. Also, the gas and compression work in both the production and feed end voids can be partially recovered during an equalization step. However, the losses of compressed gas and work during regeneration can be significant. In general, lower void volume ratio results in improved process performance (i.e., improved recovery, power consumption, etc. without considering flow distribution requirements and increasing fabrication costs).
Conventional methods for reducing PSA void spaces and improving process performance typically falls into the following classes: (a) vessel system with improved headers, (b) single-vessel system, and (c) piston-driven PSA system.
Vessel system design is a classic approach, focusing only on the vessel or bed itself. Vessels are designed to improve flow distribution and minimize void spaces within the vessel ends (or headers) between the gas inlet (feed end) or outlet (production end) and the adsorbent. U.S. Pat. No. 5,759,242 to Smolarek, et al., which describes a radial adsorber, and U.S. Pat. No. 5,538,544 to Nowobilski, et al., which describes a conventional vertical adsorber, are two recent examples of this approach. However, the vessel design approach has its limits for reducing void space. With a given flow distributor, it can only decrease header space to a level where flow maldistribution and pressure drop are acceptable for the process. In addition, void spaces in distribution pipes are not addressed by this approach.
The single-vessel pressure swing adsorption system disclosed in U.S. Pat. No. 4,194,892 to Jones, et al., is a rapid pressure swing adsorption (RPSA) system, which utilizes a single vessel filled with small adsorbent particles as well as very short cycle times (as short as a few seconds). It is worth noting that U.S. Pat. No. 4,194,892's primary purpose is not to reduce void space, but instead to reduce cycle time and adsorbent inventory and to eliminate multiple vessels. However, the use of a single bed can theoretically eliminate the distribution pipes (and then their voids) connecting a compressor or vacuum pump to different vessels in a multiple vessel PSA. The disadvantages of the single bed PSA are: (1) void space in the vessel header is not addressed and (2) product recovery is limited (in comparison to multiple vessel PSA) without an additional storage tank and recycle component.
U.S. Pat. No. 4,354,859 to Keller, et al. teaches a pressure swing parametric pumping process. This system, called a piston-driven PSA system, uses two synchronized pistons to pressurize and depressurize a single adsorber that is fed near the center of the adsorbent bed. Farooq, et al., Separation and Purification Technology 13 (1998) 181, applied this approach to a parallel passage adsorber for nitrogen and carbon dioxide separation. Suzuki, et al., Adsorption 2 (1996) 111 also utilized this approach in a single piston system for oxygen enrichment from air. This approach can theoretically eliminate header void spaces associated with conventional PSA systems. Moreover, there is no need for valves because flows can be controlled by the piston movement. However, the piston-driven PSA system suffers from scale-up difficulties. For instance, a very large piston is normally required for a large production unit. A piston of this size would be difficult to manufacture. Also, like the single bed PSA, the piston driven PSA suffers from low recovery in comparison to a conventional multiple vessel PSA.
Illustratively, European Patent Application 0,879,630 A2 to Garrett and La Cava extends the piston-driven PSA concept to a system with two sets of pistons or diaphragms. A first set of pistons or diaphragms is located at the top and bottom of the bed to influence fluid flow, as well as a second set of pistons or diaphragms at the side walls of the adsorber. The second set fractionally increases and decreases bed pressure prior to the adsorption and desorption steps, respectively. The Garrett and La Cava patent application teaches that using two sets is more efficient than only using one set. Nonetheless, as acknowledged by Garrett and LaCava, its recovery is low. In addition, the second set of pistons or diaphragms complicates the process.
The present invention addresses the limitations of conventional vessel designs, single vessel PSA, and piston-driven PSA systems. The present invention not only minimizes the header void spaces within each vessel, but also improves distribution pipe void spaces between the compressor/vacuum pump and each vessel. Moreover, the present invention can use multiple compressors and/or vacuum pumps to better distribute flow and further reduce the void spaces.

Low void adsorption systems and uses thereof


A method providing fault isolation, in an air data system which uses artificial intelligence to generate an air data parameter, includes generating the air data parameter as a function of a plurality of measured values such as static pressures. Then, estimates of each of the plurality of measured values is generated as a function of the generated air data parameter. Each measured value can then be compared to its corresponding estimate to determine if a difference between the measured value and its corresponding estimate exceeds a threshold and therefore indicates a fault in a device which provides the measured value.

The present invention relates generally to air data sensing systems, such as flush air data systems (FADS), for use on an air vehicle. More particularly, the present invention relates to methods and apparatus for providing fault isolation in artificial intelligence based air data sensing systems, such as neural network based FADS.
A FADS typically utilizes several flush or semi-flush static pressure ports on the exterior of an air vehicle (such as an aircraft) to measure local static pressures at various positions. The pressure or pressure values measured by the individual ports are combined using some form of artificial intelligence algorithm(s), e.g., neural networks (NNs) for instance, to provide corrected air data parameters for the air vehicle. Corrected air data parameters represent global values of these parameters for the air vehicle. In this context, the term "global" refers to the air data measured far away from the air vehicle, i.e., "far field." In contrast, "local" parameters are measured at the surface of the air vehicle and are prone to flow field effects around the aircraft geometry. Local parameters are characterized, or corrected, in order to get global air data. Examples of these global air data parameters for the air vehicle include angle of attack (AOA), angle of sideslip (AOS), Mach number, etc. Other well known global air data parameters for the air vehicle can also be calculated. Another example of artificial intelligence algorithms which can be used with a FADS is support vector machines (SVMs), and artificial intelligence algorithms as referenced herein include these or other types of algorithms which learn by example.
Flush air data systems provide numerous advantages which make their use desirable for certain air vehicles or in certain environments. For example, the flush or semi-flush static pressure ports can result in less drag on the air vehicle than some other types of pressure sensing devices. Additionally, the flush or semi-flush static pressure sensing ports experience less ice build-up than some other types of pressure sensing devices. Other advantages of a FADS can include, for example, lower observability than some probe-style air data systems.
Consider a FADS which uses N flush static pressure ports for use on an aircraft. The individual ports each measure a single local pressure value related to their respective locations on the aircraft. Using neural networks or other artificial intelligence algorithms, these N pressure values can be used as inputs to provide the individual global air data parameters necessary for the air data system. To ensure accurate performance and to increase reliability, an important part of the overall air data system is the ability to isolate and detect faults to maintain accuracy and safety levels. Blocked ports or drifting sensors are examples of failures of hardware. Drifting sensors are sensors with an output which changes over time, due to calibration or other problems, relative to a desired or baseline output for a particular set of conditions. Undetected faults reduce the safety of the overall system, and since aircraft global parameters are derived using artificial intelligence with a large number of pressure sensing ports as inputs, failure of one or more of these ports can be difficult to identify and isolate. Therefore, there is a need for methods of fault isolation in artificial intelligence based FADS or other air data systems.

Fault isolation method and apparatus in artificial intelligence based air data systems


In one embodiment the present invention comprises an ultrasonic polyp snare adapted to grasp, cut and coagulate polyps and other tissue masses in internal body lumens, specifically in the colon. An ultrasonic polyp snare according to the present invention includes an ultrasonic signal generator attached to the proximal end of a flexible ultrasonic waveguide. An ultrasonic vibration amplifier is coupled to the distal end of the flexible ultrasonic waveguide. An ultrasonic blade is coupled to the ultrasonic amplifier. An ultrasonic attenuator is coupled to the distal end of the ultrasonic blade. And, a snare wire is positioned adjacent at least a portion of the ultrasonic blade.

The use of ultrasonically actuated surgical instruments has proven to be a safe and effective method of cutting and coagulating tissue in a number of surgical procedures. One procedure which could benefit from the use of ultrasonic surgical instruments is the removal of tissue from the interior lining of certain lumens in the human body. Specifically, the removal of polyps from the interior lining of the colon. Surgical procedures for the removal of polyps are generally referred to as "polypectomys". In performing a polypectomy in the colon, the surgeon normally inserts a scope, such as a colonoscope, which is adapted to allow the surgeon to visually inspect the interior of the colon and to excise tissue, including polyps, where appropriate. Instruments such as colonoscopes may include a lumen to allow the surgeon to guide certain flexible surgical instruments to the treatment site. Such surgical instruments may be used to, for example, selectively remove polyps from the internal lining of the colon.
When removing a polyp from the colon it is preferable to cut the polyp stem as close as possible to the internal lining of the colon without damaging the lining. It is further preferable to stop or minimize any bleeding which may result from the removal of the polyp, in order to minimize the potential for infection or other undesirable consequences. It would, therefore, be advantageous to design an ultrasonic surgical instrument particularly adapted for removing polyps from the internal lining of the colon. It would further be advantageous to design an ultrasonic instrument adapted for removing polyps from the internal lining of the colon without damaging the internal lining. It would also be advantageous to design an ultrasonic instrument adapted for removing polyps from the internal lining of the colon wherein the polyp stem tissue was coagulated as the polyp stem was being cut.


The method of the present invention includes a step of preparing a rare earth magnet 22 disposed for forming a cylinder 22a, a first magnetizing step of applying a first external magnetic field H1 to the rare earth magnet 22, thereby forming a first region R1 magnetized from an inner side to an outer side of the cylinder 22a and a second region R2 magnetized from the outer side to the inner side, and a second magnetizing step of applying a second external magnetic field H2 so that an external magnetic field component forming an angle of more than 0° and less than 50° with a direction of the external magnetic field component applied in the first magnetizing step to a boundary between the first region R1 and the second region R2.

Presently, as rare earth magnets, two kinds of magnets, i.e., rare earth/cobalt-based magnets and rare-earth/iron/boron-based magnets are widely used in various fields.
Among them, the rare-earth/iron/boron-based magnets (hereinafter, referred to as "R-T-(M)-B magnets", R is a rare earth element including Y, T is Fe or a mixture of Fe with Co and/or Ni, M is an additive element (at least one of Al, Ti, Cu, V, Cr, Ni, Ga, Zr, Nb, Mo, In, Sn, Hf, Ta, W, for example), and B is boron or a mixture of boron with carbon) exhibit the highest maximum magnetic energy product in various kinds of magnets, and they are relatively cheep. For these reasons, the R-T-(M)-B magnets are actively adopted to various electronic equipments.
For example, in order to attain high energy efficiency, or for the purposes of miniaturization, weight reduction, and the like, the rare earth magnets are used in various rotating machines (such as motors). For example, Japanese Laid-Open Patent Publication No. 2000-41372 discloses a moving-magnet type direct-current torque motor 10 as shown in FIG. 5.
The direct-current torque motor 10 includes a rotor 1 in which permanent magnets 5 and 6 are cylindrically fixed around a cylindrical iron core (soft iron, for example) 4 having an axis 3 as the center, and a stator 2 having a substantially "C" shape in which a first magnetic pole portion 7 and a second magnetic pole portion 8 disposed oppositely while keeping a predetermined gap with the rotor 1 in end portions thereof, respectively, are formed, and a coil 9 is wound around a base portion (in an upper portion of the figure). The stator 2 is formed by superposing flat rolled magnetic steel sheets and strip having a saturation magnetic flux density of 1.6 T (tesla) or more, for example.
The permanent magnets 5 and 6 disclosed in the above-identified publication are permanent magnets each having a semi-cylindrical shape (segment), and are magnetized in directions opposite to each other. For example, in the magnet 5, a front face (an outer circumference) side is the N pole, and a back face (an inner circumference) side is the S pole. On the other hand, in the magnet 6, a front face (an outer circumference) side is the S pole, and a back face (an inner circumference) side is the N pole. Instead of the magnets 5 and 6, a cylindrical magnet (not shown) which is integrally compacted can be used.
It was found that when the magnets 5 and 6 used in a rotor of the above-mentioned motor 10 were magnetized in a condition where they were disposed in a cylindrical manner, or an integrally formed cylindrical magnet was magnetized, a conventional magnetization in which a magnetic field was applied once in a diametrical direction caused a problem that a boundary portion between regions magnetized in directions opposite to each other (corresponding to the magnets 5 and 6 in FIG. 5) was not sufficiently magnetized. In such a magnet which is insufficiently magnetized, an average magnetic flux density is reduced and an angle range in which a desired surface magnetic flux density is obtained is narrowed. In addition, in an angle distribution (around an axis) of the surface magnetic flux density, an extremal value occurs in the vicinity of the boundary portion, and a linearity of the variation in the surface magnetic flux density is lowered. As a result, it may be difficult to adjust the angle of a rotating machine with good precision, or the performance of the rotating machine may not be sufficiently exercised.

Method of magnetizing rare-earth magnet and rare-earth magnet