Preferred aspects of the present invention relate to a device for filtration comprising at least one rotor configured to create Taylor vortices on at least one side of a filtration membrane, thereby providing substantially enhanced mass or heat transfer across the membrane.

1. Field of the Invention
Preferred aspects of the present invention relate to a device that creates Taylor vortices on at least one side of a filter, thereby improving mass transfer and minimizing concentration polarization. Preferred embodiments of the present invention are particularly useful in dialysis of blood from patients with kidney disease. In other embodiments, the present invention can be used in areas of heat and mass transfer.
2. Description of the Related Art
Traditionally, dialysis is the maintenance therapy used to treat kidney disease. There are two common approaches. One is peritoneal dialysis, where the process is done internally to the patient, in the patient's pericardium. Peritoneal dialysis uses the patient's abdominal lining as a blood filter. The abdominal cavity is filled with dialysate, thereby creating a concentration gradient between the bloodstream and the dialysate. Toxins diffuse from the patient's blood stream into the dialysate, which must be exchanged periodically with fresh dialysate.
The second approach is by filtration dialysis. This was initially accomplished using flat sheet dialysis membranes, requiring square meters of the membranes. Devices were large and taxing on patients. In the 1960's, hollow fiber dialysis filtration units became popular. This was an improvement, as a large filter membrane area could be compressed into a small volume, and the volume of blood needed to fill the unit was greatly reduced.
While hollow fiber technology provides a relatively safe and cost effective means for dialysis, problems remain. Manufacturing hollow fiber cartridges is challenging. The patient is still exposed to a large surface area of material foreign to the human system. Many of the chemicals needed in manufacture are toxic to the patient. Cuprophane is the most common membrane material for hollow fiber manufacture, but it has biocompatibility issues, and relatively low permeability performance. There are superior membrane materials available in flat sheet, but these materials are challenging to form into hollow fibers.
One of the most limiting problems in any type of filtration process, including dialysis, is filter clogging, scientifically described as "concentration polarization." As a result of the selective permeability properties of the membrane, the filtered material that cannot pass through the membrane becomes concentrated on the surface of the membrane. This phenomenon is clearly illustrated in the case of a "dead-end" filter, such as a coffee filter. During the course of the filtration process, the filtered material (coffee grounds) building up on the filter creates flow resistance to the filtrate, the fluid (coffee), which can pass through the filter. Consequently, filtrate flux is reduced and filtration performance diminishes.
Various solutions to the problem of concentration polarization have been suggested. These include: increasing the fluid velocity and/or pressure (see e.g., Merin et al., (1980) J. Food Proc. Pres. 4(3):183-198); creating turbulence in the feed channels (Blatt et al., Membrane Science and Technology, Plenum Press, New York, 1970, pp. 47-97); pulsing the feed flow over the filter (Kennedy et al., (1974) Chem. Eng. Sci. 29:1927-1931); designing flow paths to create tangential flow and/or Dean vortices (Chung et al., (1993) J. Memb. Sci. 81:151-162); and using rotating filtration to create Taylor vortices (see e.g., Lee and Lueptow (2001) J. Memb. Sci. 192:129-143 and U.S. Pat. Nos. 5,194,145, 4,675,106, 4,753,729, 4,816,151, 5,034,135, 4,740,331, 4,670,176, and 5,738,792, all of which are incorporated herein in their entirety by reference thereto). In U.S. Pat. No. 5,034,135, Fischel discloses creating Taylor vorticity to facilitate blood fractionation. Fischel also describes variations in the width of the gap between a rotary spinner and a cylindrical housing, but does not teach variation in this width about a circumferential cross-section.
Taylor vortices may be induced in the gap between coaxially arranged cylindrical members by rotating the inner member relative to the outer member. Taylor-Couette filtration devices generate strong vorticity as a result of centrifugal flow instability ("Taylor instability"), which serves to mix the filtered material concentrated along the filter back into the fluid to be processed. Typically, a cylindrical filter is rotated within a stationary outer housing. It has been observed that membrane fouling due to concentration polarization is very slow compared to dead-end or tangential filtration. Indeed, filtration performance may be improved by approximately one hundred fold.
The use of Taylor vortices in rotating filtration devices has been applied to separation of plasma from whole blood (See e.g., U.S. Pat. No. 5,034,135). For this application, the separator had to be inexpensive and disposable for one-time patient use. Further, these separators only had to operate for relatively short periods of time (e.g., about 45 minutes). Moreover, the separator was sized to accept the flow rate of blood that could reliably be collected from a donor (e.g., about 100 ml/minute). This technology provided a significant improvement to the blood processing industry. The advantages and improved filtration performance seen with rotating filtration systems (Taylor vortices) have not been explored in other areas of commercial fluid separation—including kidney dialysis.
The use of Taylor vortices does not alleviate all problems with filtration however. Another common problem with the use of such rotating filtration devices is concentration polarization on the inner side of the filter membrane. While centrifugal flow instability circulates the fluid between inner and outer members, the rotating inner member does not prevent concentration polarization near the walls of its interior. As a result, filter performance could be further improved by solving this problem of interior concentration polarization.


A fuel system and method for priming a diesel engine fuel system after assembly or when run out of fuel in which the system has a filter that can trap air allowing drainback of fuel to the tank. The system is provided with a fuel priming connection to the injection pump inlet, the connection having a closure for shutting the connection when not in use. A mechanically openable check valve, such as a Schraeder valve, is a preferred form of closure. The system is primed by reverse flow of fuel from the priming connection through the filter to the fuel tank to virtually eliminate trapped air from the system. The engine may then be started with a minimum of cranking. The engine may be restarted after running out of fuel by partially filling the tank and operating the normal feed pump while bleeding air from the system through the priming connection, which is closed prior to engine starting. The engine may then be reprimed after shutdown if required.

It is known in the art relating to priming of fuel systems (either gasoline or diesel) to completely assemble the entire system and install approximately 5 gallons of fuel in the fuel tank. Then, using the in-tank electric feed pump, the system is primed from the fuel tank, through the fuel feed line, through a fuel rail or diesel injection pump, and then back through the return line to the fuel tank.
In a known fuel system, which includes a fuel filter between the fuel tank and a direct injection diesel fuel injection pump, the prior method of priming is not acceptable. A small orifice in the injection pump housing limits the flow of priming fuel through the system. Further, the fuel filter housing has a top connected inlet and a bottom feeding outlet. A portion of the air in the filter is trapped in the housing above the outlet when fuel is fed in the normal direction from the tank to the injection pump. Particularly when the filter is mounted above the fuel tank in the system, the trapped air allows fuel in the line to the filter to drain back to the fuel tank when the feed pump is shut off. The problem is greater as the filter is mounted higher in the system. When attempting to start the engine thereafter, some of the trapped air is pumped to the inlet of the fuel injection pump, causing it to be air bound and preventing engine starting.
If a vehicle with this known system were to run out of fuel in operation, air in the system would prevent restarting of the engine even after fuel was delivered to the fuel tank. This would require bleeding of the fuel lines to eliminate the trapped air in order to allow engine restart and permit the fuel system to again perform in the desired manner.

Diesel engine fuel system and method of priming


A device that comprises a plurality of distributed transceivers, a central processor and a network management engine may be configured to function as relay device, relaying an input data stream from a source device to at least one other device. The relaying may include configuring one or more of the plurality of distributed transceivers to particular mode of relay operation and receiving the input data stream from the source device via at least one of the configured one or more of the plurality of distributed transceivers. The relaying may also include transmitting at least one relay data stream corresponding to the input data stream to the at least one other device, via at least one of the configured one or more of the plurality of distributed transceivers.

Millimeter Wave (mmWave) devices are being utilized for high throughput wireless communications at very high carrier frequencies. There are several standards bodies such as 60 GHz wireless standard, WirelessHD, WiGig, and WiFi IEEE 802.11ad that utilize high frequencies such as the 60 GHz frequency spectrum for high throughput wireless communications. In the US, the 60 GHz spectrum band may be used for unlicensed short range data links such as, for example, data links within a range of 1.7 km, with data throughputs up to 6 Gbits/s. These higher frequencies may provide smaller wavelengths and enable the use of small high gain antennas. However, these higher frequencies may experience high propagation loss. Other applications may include fixed wireless communications, such as wireless backhaul links between cellular base stations.
Further limitations and disadvantages of conventional and traditional approaches will become apparent to one of skill in the art, through comparison of such systems with some aspects of the present invention as set forth in the remainder of the present application with reference to the drawings.

This patent is subject to a terminal disclaimer.

Method and system for a repeater network that utilizes distributed transceivers with array processing


A request for an IP address for a client device having a first identifier information is received from an AP device. The request for the IP address is associated with a first communication protocol. The first identifier information is compared to a second identifier information. The second identifier information is associated with a second communication protocol. The second communication protocol is different from the first communication protocol. The IP address for the client device based on comparing.

Computers have traditionally communicated with each other through wired local area networks ("LANs"). However, with the increased demand for mobile computers such as laptops, personal digital assistants, and the like, wireless local area networks ("WLANs") have developed as a way for computers to communicate with each other through transmissions over a wireless medium using radio signals, infrared signals, and the like.
In order to promote interoperability of WLANs with each other and with wired LANs, the IEEE 802.11 standard was developed as an international standard for WLANs. Generally, the IEEE 802.11 standard was designed to present users with the same interface as an IEEE 802 wired LAN, while allowing data to be transported over a wireless medium.
Generally, Wi-Fi refers to a mechanism for wirelessly connecting electronic devices. A device enabled with Wi-Fi, e.g., a personal computer, video game console, smartphone, or digital audio player, can connect to the Internet via a wireless network access point. Multiple overlapping access points may cover large areas.
Generally, a cellular (mobile) network refers to a radio network distributed over land areas called cells, each served by at least one fixed-location transceiver known as a cell site or base station. When joined together these cells can provide radio coverage over a wide geographic area. This enables a large number of portable transceivers (e.g., mobile phones, pagers, etc.) to communicate with each other and with fixed transceivers and telephones anywhere in the network, via base stations, even if some of the transceivers are moving through more than one cell during transmission.

Methods and apparatuses to provide secure communication between an untrusted wireless access network and a trusted controlled network


A method of manufacturing a MIM capacitor and a interconnecting structure using a damascene process. The MIM capacitor and the first interconnecting structure can be formed at equal depths.

1. Field of the Invention
Embodiments of the present invention relate to manufacturing a semiconductor device including a capacitor (e.g. MIM capacitor) and interconnecting structure using a damascene process.
This application claims the priority of Korean Patent Application No. 2003-52398 filed on Jul. 29, 2003, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
2. Description of the Related Art
As the integration density of semiconductor devices increases in certain applications, increased capacitance of capacitors is required to ensure safe operation of the capacitors. However, a metal-insulator-semiconductor (MIS) capacitor may have the drawback of low capacitance due to a low dielectric constant film between a polysilicon film and a dielectric film. Therefore, a metal-insulator-metal (MIM) capacitor may be used for safer operation.
A MIM capacitor may be connected to peripheral metal interconnecting layers or a drain region of a transistor via contact plugs. An interconnecting structure with interconnected metal interconnecting layers may be formed around the MIM capacitor. The interconnecting structure may be a structure interconnected between an upper metal interconnecting layer and a lower metal interconnecting layer by a contact plug (e.g. a tungsten plug).
Copper may be advantageous as a metal interconnecting material for increasing speed of semiconductor devices. Copper interconnecting can increase reliability of a semiconductor device, since it has a lower electric resistance than aluminum wire and has favorable electromigration characteristics. However, copper interconnecting patterns are generally not formed by an etching process. Rather, copper interconnecting patterns may be formed by a damascene process, because copper can be a difficult material to etch.
In forming an interconnecting structure and an MIM capacitor using a damascene process, difficulty may be encountered in manufacturing vias due to the different depths of vias in the interconnecting structure and the MIM capacitor. For example, a via contacting a lower electrode of the MIM capacitor may be formed prior to forming a via contacting an upper electrode of the MIM capacitor. Accordingly, the metal electrode under the via may be damaged due to different etching depths.
Example FIGS. 1A and 1B are cross-sectional views of a MIM capacitor and an interconnecting structure. In example FIGS. 1A and 1B, lower metal interconnecting layers 11 and 21 act as a lower electrode of the MIM capacitors 10 and 20. The MIM capacitors 10 and 20 include lower metal interconnecting layers 11 and 21, capacitor dielectric films 12 and 22, and upper electrodes 13 and 23. The upper electrodes 13 and 23 of the MIM capacitors 10 and 20 are connected to upper metal interconnecting layers 17 and 27 by contact plugs 15a, 16a and 25a. The lower metal interconnecting layers 11 and 21 act as lower electrodes of the MIM capacitors 10 and 20. The lower metal interconnecting layers 11 and 21 are connected to the upper metal interconnecting layers 18 and 28 by contact plugs 19a and 29a. The contact plugs 15a, 16a, 19a, 25a and 29a are formed by filling the vias 15b, 16b, 19b, 25b and 29b, formed in inter-metal insulating layers 14 and 24, with metal material.
In example FIG. 1A, the upper electrode 13 may be damaged when etching the inter-metal insulating layer 14 to form the via 19b, because the vias 15b and 16b are formed prior to via 19a. The via 19b is formed prior to vias 15b and 16b because the via 19b is deeper than the vias 15b and 16b. For example, when the upper electrode 13 and the lower electrode 11 opened by vias 15b and 16b, a short circuit connection between the upper electrode 13 and the lower electrode 11 may be formed by the contact plugs 15a and 16a. If the upper electrode 13 and the lower electrode 11 are interconnected, the MIM capacitor may not function properly.
The device illustrated in example FIG. 1B has an analogous structure to the device shown in example FIG. 1A. However, a contact plug 25a, connected to an upper electrode 23, is separated from a lower electrode 21. By separating the contact plug 25a from the lower electrode 21, a short circuit connection between the upper electrode 23 and the lower electrode 21, made by the material forming the contact plug, can be avoided even if the via connecting an upper interconnecting layer to the upper electrode 23 is formed through the upper electrode 23 and the capacitor dielectric film 22. Nevertheless, etching damage to the upper electrode 23 through a via 25b can not be completely avoided when etching the via 29b, because the via 29b is deeper than the via 25b.
Example FIGS. 2A and 2B are cross-sectional views of a device including a MIM capacitor and an interconnecting structure. In the device illustrated in example FIGS. 2A and 2B, in addition to lower metal interconnecting layers 39c and 49c, lower electrodes 31 and 41 of the MIM capacitor are formed. The lower electrodes 31 and 41 are connected to upper metal interconnecting layers 38 and 48 by contact plugs 36a and 46a, respectively.
Referring to example FIGS. 2A and 2B, MIM capacitors 30, 40 (including lower electrodes 31 and 41, capacitor dielectric layers 32 and 42, and upper electrodes 33 and 43) are formed on an insulating layer 5. The upper electrodes 33 and 43 of the MIM capacitors 30 and 40 are connected to the upper metal interconnecting layers 37 and 47 by contact plugs 35a and 45a. The lower metal interconnecting layers 39c and 49c, formed separately from the lower electrodes 31 and 41, are connected to the upper metal interconnecting layers 38 and 48 by the contact plugs 39a and 49a.
In the device illustrated in example FIG. 2A, a via 39b (for connecting the lower metal interconnecting layer 39c to the upper metal interconnecting layer 38) is deeper than vias 35b and 36b (for connecting the upper electrode 33 and the lower electrode 31 to the upper metal interconnecting layers 37 and 38, respectively). Accordingly, the upper electrode 33 and the lower electrode 31 may be damaged when etching the via 39b since the vias 35b and 36b are formed prior to the via 39b.
The device illustrated in example FIG. 2B has an analogous structure to the device shown in example FIG. 2A. However, a contact plug 45a (for connecting an upper electrode 43 of an MIM capacitor 40) is separated from a lower electrode 41. By separating the contact plug 45a from an end part of the lower electrode 41, a connection between the upper electrode 43 and the lower electrode 41 by the contact plug material can be avoided, even if the via 45b for connecting an upper metal interconnecting 47 to the upper electrode 43 is formed through the upper electrode 43. However, etching damage to the upper electrode 43 and the lower electrode 41 through the vias 45b and 46b can not be completely avoided when etching the via 49b, because the via 49b is deeper than the vias 45b and 26b.
In order to solve this problem, research has gone into finding methods of forming a trench in the MIM capacitor in the inter-metal insulating layer so that vias for connecting the MIM capacitor to a metal interconnecting layer can have equal depths. For example, Korea Laid-Open Patent publication 2000-53453 discloses a method of forming a MIM capacitor in a trench having the same depth as an opening for a interconnecting structure using a double damascene method. When the interconnecting structure and the trench for the MIM capacitor are formed to the same depth, a via for connecting the MIM capacitor and a via for connecting the interconnecting structure to respective upper metal interconnecting layer can be formed at equal depths. Also, a capacitance of a semiconductor device can be increased by forming the MIM capacitor in a trench.
However, in this method (of Korean Laid-Open Patent publication 2000-53453), since a portion (for forming the trench of the MIM capacitor) is masked while depositing metal to form a interconnecting structure using a photoresist mask, a selective metal deposition is practically impossible. Electroplating for forming a copper interconnecting structure is generally carried out in a sulfuric acid (H2SO4) based solution. However, photoresist material may be degraded by the sulfuric acid solution. Therefore, the photoresist material for masking the trench portion cannot perform an adequate masking role. The process may be necessarily complicated, because electroplating the interconnecting structure and electroplating the MIM capacitor must be performed separately. Planarization of a copper layer after electroplating may also be difficult, due to the large step.

Metal-insulator-metal capacitor and interconnecting structure


The invention has as its object the provision of a medicine capable of reducing a volume of emphysema-suffering pulmonary alveoli or alveolar sacs by means of a respiratory region volume inhibitor containing a coating film formation as a main component and capable of forming a coating film in a respiratory region, characterized by being used in such a way that the coating film-forming component is administered to an emphysema-suffering pulmonary alveolar parenchyma in a human-respiratory region in an amount of 0.004 to 200 g/application, preferably 0.07 to 20 g/application and more preferably 0.5 to 5 g/application on each occasion.

Chronic obstructive pulmonary disease (COPD) means a wide variety of groups of lung diseases impeding normal breathing and is a disease of lung obstruction by the presence of at least one disease selected from asthma, pulmonary emphysema and chronic bronchitis. COPD is such that these diseases frequently co-exist at the same time and a difficulty is involved in confirming whichever disease is a cause bringing about lung obstruction in individual diseases. In clinical aspect, COPD has been diagnosed by a lowering of an expiratory flow rate from the lungs, which is kept constant over several months and which continuously continues over two years in cases of chronic bronchitis. The two most serious states related with COPD include chronic bronchitis and pulmonary emphysema.
Of these, pulmonary emphysema means a state where an abnormal enlargement develops bringing about the destruction of tissues called pulmonary alveolar parenchyma such as of alveolar bronchioles, pulmonary alveoli, alveolar sacs or the like serving as a gas exchange site. Although the pulmonary alveolar parenchyma in its normal state shrinks during expiration, emphysema-suffering pulmonary alveolar parenchyma does not return to its original state if once enlarged by breathing. Therefore, one cannot breathe well. Besides, the effective area and vascular bed (blood capillaries running randomly throughout the surfaces of the pulmonary alveoli) of the pulmonary alveoli decrease, thereby lowering the ventilatory function of the lungs as a whole. Additionally, since elastin, collagen and the like are destroyed from inflammation, the elasticity of lung lowers and it is not thus possible to expand the lung by pulling the respiratory tract open, so that the bronchi are in a condition of likelihood of deformation. Accordingly, as set out in PCT International Publication No. WO2009/075106 Pamphlet, when the lungs contract upon breathing, the bronchi thereof is narrowed by being compressed with the pulmonary alveoli filled with air, with the result that the lungs are hyperinflated, thus making it difficult to release the air. To cope with this, as set out, for example, in [Jadranka Spahija et al., "Effects of Imposed Pursed-Lips Breathing on Respiratory Mechanics and Dyspnea at Rest and During Exercise in COPD," Chest 2005; 128:640-650], patients with pulmonary emphysema exhale through pursed-lips breathing so as to breathe out air.
In Japan, about 50,000 persons suffer this disease and have now undergone home oxygen therapy. It is said that when including those persons having a mild disease condition, about three million persons are regarded as backup candidates for pulmonary emphysema. For the therapy, the home oxygen therapy is main treatment at present. The oxygen therapy has been frequently used in a condition where sufficient oxygen cannot be absorbed from air because pulmonary function is severely impaired. However, this therapy merely alleviates symptoms and is thus not an effective treatment. For drug therapy, for example, mention is made of: a method wherein a bronchodilator is used to help keep the airways in the lungs open thereby alleviating the shortness of breath as described in [Jan A. van Noord et al., "Effects of Tiotropium With and Without Formoterol on Airflow Obstruction and Resting Hyperinflation in Patients with COPD," Chest 2006; 129: 509-517]; a method of reducing inflammation in the airways by use of an inhaled steroid drug or peroral steroid drug; a method of preventing and treating additional inflammation by use of antibiotics; and a method of eliminating the mucus from the airways by using an expectorator.
However, as described in [Ware J H, et al., "Cost effectiveness of Lung-Volume-Reduction Surgery for Patients with Sever Emphysema," The new England Journal of Medicine 2003; 348:2005-2056] and also in [National Emphysema Treatment Trial Research Group, "A Randomized Trial Comparing Lung-Volume-Reduction Surgery with Medical Therapy for Severe Emphysema," The new England Journal of Medicine 2003; 348:2059-2073], all these drug therapies help control the pulmonary emphysema and alleviate the symptoms, but are not an effective treatment. In addition, there are known a surgical therapy such as a lung reduction operation wherein the damaged portion of lung is removed to allow a normal part of lung to be enlarged, and lung transplantation. However, these methods would impose a great burden on patients and it is difficult to secure a lung substitute.
If lung volume reduction (LVR) can be non-invasively achieved without thoracotomy, there can be given a chance for treatment of more patients. Nevertheless, the success rate of the existing non-invasive treatment is low. For the non-invasive treatment, there is known an apparatus of impeding an inspiration inflow toward the terminal direction of lung by indwelling a structure having a unidirectional valve mechanism inside the bronchus so as to obtain similar effects to the lung volume reduction surgery (LVRS) as set forth, for example, in the U.S. Pat. No. 6,258,100 specification. However, in case where these structures have been indwelled, there is pointed out, in the U.S. Pat. No. 7,549,984, a problem in that easy access to ahead of the structures becomes difficult.
It is known that in the destroyed alveolar bronchiole or pulmonary alveolar parenchyma, there exists an air flow path called collateral channel and different from the main airway. Accordingly, as described in the Publication of United States Patent Application No. 2006/0264772, the air flow passing through the main airway can be impeded by means of the structure. Nevertheless, where collateral channels exist, air arrives at the inside of the destroyed alveolar bronchiole or pulmonary alveolar parenchyma while taking a detour path around the block with the structure, so that the lung enlargement cannot be prevented.
For a measure of achieving non-surgical lung volume reduction, there is disclosed, in Patent Document 5, a method of realizing LVR wherein a region of lung is collapsed and part of the collapsed region is bonded to other region to promote desmoplasia in the bonded tissues or therearound. In this method, however, the collapse of the pulmonary alveolar parenchyma by vital reaction has to be waited. Moreover, in the U.S. Pat. No. 6,682,520 specification, a trial method of LVR is described using a material containing a site of targeting damaged lung tissues. However, the U.S. Pat. No. 7,678,767 indicates that this method not only needs the targeting site, but also needs a process of reaction with the damaged site. Hence, an effective treating method of pulmonary emphysema is not now known in this field.
The disease state where pulmonary emphysema is an underlying disease like COPD includes pneumothorax. The pneumothorax is a disease state where a hole is made in the visceral pleura surrounding the lung per se and air is leaked into a space inside the lung inbetween with the visceral pleura at the side of thorax.
Where breathing is prevented by pneumothorax, there is performed a drainage method wherein a tube is inserted through an incision in the chest wall and the air inbetween the parietal pleura and the visceral pleura is drained, or a resection treatment of cystectomy under thoracoscopy. However, with the drainage method, it takes several or more days for healing and the treatment under thoracoscopy is a sort of operation, with high invasiveness on the part of patient. The pneumothorax is high in rate of recurrence and thus, there have been demanded a shortage in time required for one treatment and a reduction in operation invasiveness.

Therapeutic agent for pulmonary emphysema


An electric power steering apparatus includes a booster circuit and a microcomputer. The booster circuit includes a booster coil, a first FET, and a second FET. The booster coil is connected to the first FET, which is grounded. A node a between the booster coil and the first FET is connected to the second FET, which is connected to a drive circuit. The microcomputer drives the first and second FETs such that the first and second FETs are selectively turned on and off, thereby controlling an output voltage of the booster circuit. When application of assisting force to a steering system is stopped, the microcomputer holds the second FETs on until the output voltage of the booster circuit becomes equal to a predetermined voltage.

The present invention relates to an electric power steering (EPS) apparatus equipped with a booster that outputs an output voltage obtained by boosting a power supply voltage, and to a booster.
In recent years, EPS apparatuses, which use a motor as a driving source, are widely used as vehicle power steering apparatuses. Some of EPS apparatuses include a booster circuit to boost a supply source voltage. Such an EPS apparatus controls a motor based on a boosted voltage, such that assisting force increases and the rise characteristic of the assisting force is improved.
For example, the EPS apparatus disclosed in Japanese Laid-Open Patent Publication No. 2003-319700 includes a booster circuit provided between a vehicle power supply and a drive circuit. The booster circuit includes a booster coil, a first switching element, and a second switching element. The power supply voltage is applied to one end of the booster coil. The first switching element selectively grounds the other end of the booster coil. The second switching element selectively connects and disconnects the node between the booster coil and the first switching element with an output terminal.
By turning on and off the first and second switching elements, the booster circuit boosts the power supply voltage and then smoothes the pulsating voltage and current with a smoothing capacitor connected to the output terminal. The booster circuit then applies the smoothed voltage and current to the drive circuit
When an assist control stops due to turning off of an ignition switch or an abnormality of the EPS apparatus, the output terminal of the booster circuit is disconnected from the motor, which is a load of the booster circuit. Therefore, if the boost control is stopped at the same time as the assist control is stopped, so that the smoothing capacitor is disconnected from the vehicle power supply, the energy stored in the smoothing capacitor is not consumed after the stop of the boost control, and the terminal voltage of the smoothing capacitor is maintained to a high level for an extended period of time. Such high voltage portions are limiting factors in maintenance. In this respect, the booster circuit of the publication has plenty of room for improvement.

Electric power steering apparatus and booster


A multistage centrifugal turbomachine comprising a rotor assembly comprising a shaft carrying a first and a second impeller, and a stator comprising a passage for a fluid flowing from an outlet side of the first impeller to an inlet side of the second impeller, the passage comprising a diffuser downstream the outlet side of the first impeller), a return channel upstream the inlet side of the second impeller, a bend connecting the diffuser and the return channel, and a plurality of stator blades being provided in the return channel, wherein a portion of the return channel is delimited by the first impeller, the plurality of stator blades extending at least partially in the portion of the return channel.

The present invention relates to multistage centrifugal turbomachines and to centrifugal impellers for multistage centrifugal turbomachines, particularly, but not exclusively, for oil and gas applications.
A centrifugal turbomachine is a rotary machine where mechanical energy is transferred between a working fluid and a rotary assembly including at least one centrifugal impeller. In oil and gas application, where the fluid is typically a gaseous fluid, centrifugal turbomachines include compressors and expanders. A compressor is a turbomachine which increases the pressure of a gaseous fluid through the use of mechanical energy. An expander is a turbomachine which uses the pressure of a working gaseous fluid to generate mechanical work on a shaft of the rotary assembly by means of the expansion of the fluid in the impeller(s).
In uncompressible fluid, e.g., water, centrifugal turbomachines include pumps and turbine, which transfer energy between the fluid and the impeller in a way analogous to compressors and expanders, respectively.
In general, in all cases, the working fluid exchanges energy with the centrifugal machine by flowing in the centrifugal impeller along a radial outward direction, oriented from an axis of rotation of the impeller to a peripheral circumferential edge of the impeller.
In particular, the centrifugal impeller of a compressor turbomachine transfers the mechanical energy supplied by a motor that drives the turbomachine to the working gaseous fluid being compressed by accelerating the fluid in the centrifugal impeller. The kinetic energy imparted by the impeller to the working fluid is transformed into pressure energy when the outward movement of the fluid is confined by a diffuser and the machine casing.
Centrifugal turbomachines are frequently referred to as single stage turbomachines when they are fitted with a single impeller, or as multistage centrifugal turbomachines when they are fitted with a plurality of impellers in series.
A prior art embodiment of a multistage centrifugal compressor 100 is illustrated in FIG. 1, in an overall section view.
The multistage centrifugal compressor 100 operates a process gas between an input pressure and an output pressure which is higher than the input pressure. The process gas may, for example, be any one of carbon dioxide, hydrogen sulfide, butane, methane, ethane, propane, liquefied natural gas, or a combination thereof.
Compressor 100 comprises a stator 102 within which is mounted a rotary assembly 103 including a shaft 104, which carries a plurality of identical impellers (three impellers 110, 111, 112 in the embodiment in FIG. 1) in series. The shaft 104 extends along an axis of rotation Y of compressor 100, having an axial span A, measured from the first impeller 110 to the last impeller 112.
Each impeller 110, 111, 112 has a typical closed design configuration including an impeller hub 113, which closely encircles the shaft 104, and a plurality of rotary blades 108 extending between a rear impeller disc 123 and a front shroud 119. The impeller disc 123 comprises a front side 124, which supports the plurality of rotary blades 108, and a rear side 125, which is opposite to front side 124. Each impeller 110, 111, 112 respectively comprises a low-pressure inlet side 110a, 111a, 112a defined by an impeller eye 115 on the front shroud 109 and a high-pressure outlet side 110b, 111b, 112b defined by a peripheral circumferential edge of the impeller 110, 111, 112.
The multistage compressor 100 is subdivided into a plurality of stages 107a,b,c (three stages in the embodiment in FIG. 1), each stage 107a,b,c including a respective impeller of the plurality of impellers 110, 111, 112. Between the first and second stage 107a,b the stator 102 includes a passage 105 for a process gas flowing from the outlet side 110b of the first impeller 110 to the inlet side 111a of the second impeller 111. The passage 105 comprises a diffuser 126 downstream the outlet side 110b, a return channel 128 upstream the inlet side 111a and a U-shaped bend 127 connecting the diffuser 126 and the return channel 128. A plurality of stator blades 115 are provided in the return channel 128 for guiding the process fluid toward the inlet side 111a of the second impeller 111. The process gas flowing in the diffuser 126 is directed along a first outward radial direction orthogonal to the axis of rotation Y while the gas flowing in the return channel 128 is directed along a second inward radial direction oriented toward the axis of rotation Y, the bend 127 providing a 180° degree deflection of the gas flow.
Analogously, a passage identical to passage 105 is provided in the stator 102 for the same process gas flowing from the outlet side 111b of the second impeller 111 to the inlet side 112a of the third impeller 112.
The passage 105 is provided in a diaphragm 118 extending in the stator 102 from one to the following impeller of the series of impellers 110, 111, 112. The diaphragm 118 comprises a first portion 138 extending axially, i.e., along an axial direction parallel to the axis of rotation Y, from the diffuser 126 and the rear side 125 of the impeller disc 123 to the return channel 128, and extending radially, i.e., along a radial direction orthogonal to the axis of rotation Y, between the shaft 102 and the bend 127. A seal 130 is provided in the gap 131 between the first portion 138 of the diaphragm 118 for preventing the process gas from leaking through the gap 131. The diaphragm 118 comprises a second portion 139 extending axially from the return channel 128 to the following stage of the plurality of stages 107a,b,c. An impeller eye seal 140 of the labyrinth type is provided between an impeller eye of the front shroud 119 of each centrifugal impeller 110, 111, 112 and the respective portion 139 of the diaphragm 118, in order to prevent the fluid from leaking in the space between each impeller 110, 111, 112 and the respective portion 139, from the outlet high-pressure side of the impeller to the inlet low-pressure side thereof.
It would be desirable to reduce as much as possible the axial span A, in order to reduce the overall sizes, weight and, as a consequence, cost of the turbomachine. In addition an axial span reduction would result in an improved rotordynamic behaviour, improving the stability of the rotary assembly which depends on the ratio between axial and radial sizes.


A positive photoresist composition is disclosed which comprises (a) a resin obtained from an alkali-soluble resin containing phenolic hydroxyl groups by replacing from 10 to 80% of the phenolic hydroxyl groups each with a group having a specific structure, (b) a compound which generates an acid upon irradiation with actinic rays or a radiation, and (c) a solvent. This composition is an excellent, chemically amplified photoresist composition which has high resolution and gives a resist pattern having no depressions in an upper part thereof and having satisfactory adhesion to the substrate.

Conventional resists comprising a novolak and a naphthoquinonediazide compound are unsuitable for use in pattern formation by lithography using far ultraviolet rays or excimer laser beams, because the novolak and the naphthoquinonediazide show intense absorption in the far ultraviolet region to render the light less apt to reach the resist bottom. Thus, the resist has low sensitivity to give only a tapered pattern.
One means for eliminating the above problem is the chemically amplified resist composition described in, e.g., U.S. Pat. No. 4,491,628 and European Patent 29,139. A chemically amplified positive resist composition is a pattern-forming material in which an acid generates in exposed areas upon irradiation with a radiation such as far ultraviolet rays and this acid catalyzes a reaction that makes the areas irradiated with the actinic rays and the unirradiated areas to differ in solubility in a developing solution to thereby form a pattern on a substrate.
Examples thereof include combinations of a compound which generates an acid upon photodecomposition with an acetal or O,N-acetal compound (see JP-A-48-89003; the term "JP-A" as used herein means an "unexamined published Japanese patent application"), with an orthoester or amidoacetal compound (see JP-A-51-120714), with a polymer having acetal or ketal groups in the backbone (see JP-A-53-133429), with an enol ether compound (see JP-A-55-12995), with an N-acyliminocarbonic acid compound (see JP-A-55-126236), with a polymer having orthoester groups in the backbone (see JP-A-56-17345), with a tertiary alkyl ester compound (see JP-A-60-3625), with a silyl ester compound (see JP-A-60-10247), and with a silyl ether compound (see JP-A-60-37549 and JP-A-60-121446). These combinations show high photosensitivity since they have a quantum efficiency exceeding 1 as the principle.
Another means for eliminating the problem described hereinabove is a system which is stable over long at room temperature but decomposes upon heating in the presence of an acid to become alkali-soluble. Examples thereof include systems comprising a combination of a compound which generates an acid upon exposure to light with an ester having a tertiary or secondary carbon (e.g., t-butyl or 2-cyclohexenyl) or with a carbonic ester compound, as described in, e.g., JP-A-59-45439, JP-A-60-3625, JP-A-62-229242, JP-A-63-27829, JP-A-63-36240, JP-A-63-250642; Polym. Eng. Sce., Vol. 23, p. 12 (1983); ACS. Sym., Vol. 242, p. 11 (1984); Semiconductor World, November 1987 issue, p. 91; Macromolecules, Vol. 21, p. 1475 (1988); and SPIE, Vol. 920, p. 42 (1988). Since these systems also have high sensitivity and show reduced absorption in the deep UV region as compared with the naphthoquinonediazide/novolak resin systems, they can be effective systems for coping with the utilization of the light source having shorter wavelength.
The chemically amplified positive resist compositions described above are roughly divided into three groups: three-component systems comprising an alkali-soluble resin, a compound which generates an acid upon exposure to a radiation (photo-acid generator), and a dissolution inhibitive compound for the alkali-soluble resin which has acid-decomposable groups; two-component systems comprising a resin having groups which decompose upon reaction with an acid to render the resin alkali-soluble and a photo-acid generator; and hybrid systems comprising a resin having groups which decompose upon reaction with an acid to render the resin alkali-soluble, a low-molecular dissolution inhibitive compound having an acid-decomposable group, and a photo-acid generator.
In JP-A-2-19847 is disclosed a resist composition characterized by containing a resin obtained from poly(p-hydroxystyrene) by protecting all or part of the phenolic hydroxyl groups each with a tetrahydropyranyl group.
In JP-A-4-219757 is disclosed a resist composition characterized by containing a resin obtained likewise from poly(p-hydroxystyrene) by replacing from 20 to 70% of the phenolic hydroxyl groups each with an acetal group.
Moreover, JP-A-5-249682 discloses a photoresist composition containing a similar resin protected with an acetal. In JP-A-8-123032 is disclosed a photoresist composition containing a terpolymer having groups substituted with acetal groups.
Furthermore, JP-A-8-253534 discloses a photoresist composition containing a partly crosslinked polymer having groups substituted with acetal groups.
However, these prior art compositions have a problem that they are unsuitable for use in producing IC elements on the order of sub-half-micron since resist patterns formed therefrom have depressions in an upper part thereof. Those compositions have another problem that the resist patterns have poor adhesion to substrates and this arouses troubles such as fine-pattern collapse.
As described above, the prior art photoresist compositions have problems that they are unsuitable for use in producing IC elements on the order of sub-half-micron since resist patterns formed therefrom have depressions in an upper part thereof, and that the pattern/substrate adhesion is poor to arouse troubles such as fine-pattern collapse. Hence, further improvements have been desired.


The present disclosure is directed to an adjustable mounting assembly for a fan motor, having a frame defining a space configured to receive the fan motor, a fixed nut coupled to the frame, and a bolt extending through the fixed nut and into the space. The frame is configured to mount to a heating, ventilation, and/or air conditioning (HVAC) unit, and the bolt is adjustable relative to the fixed nut to adjust a position of the fan motor within the space.

This section is intended to introduce the reader to various aspects of art that may be related to various aspects of the present disclosure, which are described below. This discussion is believed to be helpful in providing the reader with background information to facilitate a better understanding of the various aspects of the present disclosure. Accordingly, it should be understood that these statements are to be read in this light, and not as admissions of prior art.
HVAC systems are utilized in residential, commercial, and industrial environments to control environmental properties, such as temperature and humidity, for occupants of the respective environments. An HVAC system may control the environmental properties through control of an air flow delivered to the environment. For example, the HVAC system may circulate a refrigerant and place the refrigerant in a heat exchange relationship with a supply air flow to condition the supply air flow before it is discharged to the conditioned environment. The HVAC system may also place the refrigerant in a heat exchange relationship with an ambient air flow in order to facilitate cooling of the refrigerant. To this end, the HVAC system may include one or more fans configured to facilitate cooling of the refrigerant with the ambient air flow. Each fan may be operated by a fan motor, and each fan motor may be securely coupled within the HVAC system via a respective motor mount. In some embodiments, each motor mount may be configured to receive a particularly sized fan motor. As such, different embodiments of the motor mount may be manufactured to accommodate different sized fan motors, which may increase a cost associated with installation of fan motors in the HVAC system.


The invention comprises integrated circuitry fabrication methods of making a conductive electrical connection, methods of forming a capacitor and an electrical connection thereto, methods of forming DRAM circuitry, integrated circuitry, and DRAM integrated circuitry. In one implementation, an integrated circuitry fabrication method of making a conductive electrical connection includes forming a conductive layer including a conductive metal oxide over a substrate. The conductive layer has an outer surface. At least a portion of the conductive layer outer surface is exposed to reducing conditions effective to reduce at least an outermost portion of the metal oxide of the conductive layer, most preferably by removing oxygen. Conductive material is formed over the reduced outermost portion and in electrical connection therewith. In one implementation, integrated circuitry includes a conductive metal oxide comprising layer received over a substrate. The conductive metal oxide comprising layer has at least one localized region. At least an outermost portion of the localized region has less oxygen content than a region of the conductive metal oxide comprising layer immediately laterally adjacent the at least one localized region. Other aspects and implementations are disclosed or contemplated.

This invention relates to integrated circuitry fabrication methods of making a conductive electrical connection, to methods of forming a capacitor and an electrical connection thereto, to methods of forming DRAM circuitry, and to integrated circuitry such as DRAM integrated circuitry.
As DRAMs increase in memory cell density, there is a continuing challenge to maintain sufficiently high storage capacitance despite decreasing cell area. Additionally, there is a continuing goal to further decrease cell area. One principal way of increasing cell capacitance is through cell structure techniques. Such techniques include three-dimensional cell capacitors, such as trenched or stacked capacitors. Yet as feature size continues to become smaller and smaller, development of improved materials for cell dielectrics as well as the cell structure are important. The feature size of 256 Mb DRAMs and beyond will be on the order of 0.25 micron or less, and conventional dielectrics such as SiO2 and Si3N4 might not be suitable because of small dielectric constants.
Highly integrated memory devices, such as 256 Mbit DRAMs and beyond, are expected to require a very thin dielectric film for the 3-dimensional capacitor of cylindrically stacked or trench structures. To meet this requirement, the capacitor dielectric film thickness will be below 2.5 nm of SiO2 equivalent thickness. Insulating inorganic metal oxide materials have high dielectric constants and low leakage current which make them attractive as cell dielectric materials for high density DRAMs and non-volatile memories. Most all of these materials incorporate oxygen and are otherwise exposed to oxygen and anneal for densification to produce the desired capacitor dielectric layer.
In many such applications, it will be desirable to utilize conductive metal oxides as the principal material for one or both of the conductive capacitor electrodes. Conductive contact to the outer, or cell, electrode layer in DRAM circuitry is typically made through a contact opening formed within an electrically insulative material. The opening is subsequently filled with one or more conductive materials, such as titanium, titanium nitride and/or tungsten, to form the conductive contact to the cell electrode. Unfortunately, these materials are capable of oxidizing to a non-conducting metal oxide upon effective exposure to the overlying conductive metal oxide. For example, exposure to temperature as low as 200xc2x0 C. can cause oxygen from the conductive metal oxide to react with one or more of titanium, titanium nitride and tungsten to form an insulative oxide, and effectively block the electrical connection.
Overcoming such problem in DRAM circuitry fabrication was a motivation for the invention, but the invention is in no way so limited.
The invention comprises integrated circuitry fabrication methods of making a conductive electrical connection, methods of forming a capacitor and an electrical connection thereto, methods of forming DRAM circuitry, integrated circuitry, and DRAM integrated circuitry. In one implementation, an integrated circuitry fabrication method of making a conductive electrical connection includes forming a conductive layer including a conductive metal oxide over a substrate. The conductive layer has an outer surface. At least a portion of the conductive layer outer surface is exposed to reducing conditions effective to reduce at least an outermost portion of the metal oxide of the conductive layer, most preferably by removing oxygen. Conductive material is formed over the reduced outermost portion and in electrical connection therewith.
In one implementation, a method of forming a capacitor and an electrical connection thereto includes forming a pair of capacitor electrodes having a capacitor dielectric layer therebetween over a substrate. At least one of the capacitor electrodes includes a conductive metal oxide. An insulating layer is formed over the capacitor electrodes. A contact opening is formed into the insulating layer over the one capacitor electrode. The one capacitor electrode under the contact opening is exposed to conditions effective to remove at least some of the oxygen of the metal oxide from at least an outermost portion of the one capacitor electrode. Conductive material is formed within the contact opening in electrical connection with the one capacitor electrode.
In one implementation, integrated circuitry includes a conductive metal oxide comprising layer received over a substrate. The conductive metal oxide comprising layer has at least one localized region. At least an outermost portion of the localized region has less oxygen content than a region of the conductive metal oxide comprising layer immediately laterally adjacent the at least one localized region.
Other aspects and implementations are disclosed or contemplated.


A method and a system for controlling an air-fuel ratio for a gas engine are provided. Current outlet pressure of the nozzle is calculated based on current pressure in an intake pipe and a current rotational speed, without detecting the outlet pressure of the nozzle by a sensor. A fluid state of the gas can be determined based on a ratio of the current outlet pressure to the current inlet pressure of the nozzle collected by a sensor, such that a flow rate characteristic corresponding to the fluid state can be selected to calculate power-on duration for the nozzle, so as to set the air-fuel ratio based on the power-on duration. The power-on duration can be calculated based on flow rate characteristics of the gas in respective fluid states, thereby achieving an air-fuel ratio with high accuracy.

Air-fuel ratio is a mass ratio of air to natural gas in a gas engine. In order to fully burn a gas in the engine, the air-fuel ratio is required to be accurately controlled. By controlling the engine to operate at a better air-fuel ratio, exhaust emission, power performance and economic performance of the engine can be maximized. However, accuracy for controlling the air-fuel ratio is poor according to the conventional technology.

Method and system for controlling air-fuel ratio for gas engine


A dielectric layer comprised of lanthanum, lutetium, and oxygen that is formed between two conductors or a conductor and a substrate. In one embodiment, the dielectric layer is formed over the substrate without the need for an additional interfacial layer. In another embodiment, the dielectric layer is graded with respect to the lanthanum or lutetium content or in the alternative, may include aluminum. In yet another embodiment, an insulating layer is formed between the conductor or substrate and the dielectric layer or between both the conductor and substrate and the dielectric layer. The dielectric layer is preferably formed by molecular beam epitaxy, but can also be formed by atomic layer chemical vapor deposition, physical vapor deposition, organometallic chemical vapor deposition or pulsed laser deposition.

CMOS devices contain both n- and p- channel field effect transistors (FET) and form the basis of integrated circuits. These transistors are metal oxide-based semiconductor devices which include a source and drain region and an insulated gate in between. As the density of integrated circuits and performance increases, the dimensions of the transistors have to be reduced. As a result the thickness of the insulated gate dielectric layer has to be made smaller. With regard to gate dielectrics, one of the desirable features of the dielectric layer is that it couple the overlying gate electrode to the underlying channel so that the channel is responsive to the stimulus applied to the gate. In this regard it is desirable for that dielectric to have a high dielectric constant commonly known as high K. Silicon dioxide has been by far, the most common and effective gate insulator used in making integrated circuits. This has a very high level of integrity and, in particular, is able to be made with a very low defect density. The result is that the silicon dioxide operates very effectively causing devices to have low current leakage. Unfortunately, the leakage current increases dramatically with reduced thickness of the gate dielectric. For example, SiO2 having a thickness of less than 20Å results in unacceptable leakage current and degraded device performance. Accordingly there exists a need to replace the SiO2 in CMOS devices. Leakage currents can be reduced by having a thicker high K layer having reduced equivalent (SiO2) oxide thickness.
One of the characteristics that is desirable for the high K dielectric is that it be amorphous. It must remain amorphous for its entire life including during manufacturing and subsequently during functional operation as part of the completed integrated circuit. Many of the alternative high K dielectrics have sufficiently high K and sufficient integrity at time of deposition, but over subsequent processing steps and the heating that is associated with that, the result is crystallizing of these films. These films that are so crystallized are not perfectly crystallized throughout their entire length and width but have areas known as grain boundaries between the crystalline structures that are formed. These grain boundaries are areas of leakage and other problems that affect electrical performance.
Currently there is much work being done in developing high K dielectrics that have a higher dielectric constant than that of silicon oxide. There are a number of those, but one of the advantages of silicon oxide is its high band gap and low interface state density with silicon which results in it being a very effective insulator. Thus, many of the materials being developed for high K purposes have been found to have problems because they do not have a high enough band gap or because they are difficult to make with enough integrity to prevent current leakage through the dielectric. Additional problems remain unresolved such as thermal stability with the silicon substrate and gate electrode, fermi level pinning at the oxide/metal interface and scaling. Even though amorphous materials including Hr-based and Zr-based oxides are being investigated, there appears to be no clear solution since there are outstanding problems with these materials when integrating into a CMOS flow. Also, these materials recrystallized during the high temperature steps during the manufacturing process. La-based oxide materials can potentially be used as a high K dielectric for Si CMOS devices. Such oxides have higher dielectric constant than SiO2 and are predicted to be thermodynamically stable in contact with silicon.
An alternative to amorphous is monocrystalline films. In theory, high K dielectric films can be made typically monocrystalline, although difficulties exist. One such difficulty is matching the crystalline structure of the film with that of the underlying semiconductor, typically silicon, as well as during the formation process that it be in fact perfectly formed. Epitaxial layers, that is layers that are monocrystalline, are known in the industry. Silicon can be made epitaxially. One of the techniques by which very thin films can be put down in a monocrystalline form is molecular beam epitaxy. Even with using MBE technology there is still the difficulty of ensuring defect free films.
In developing new high K dielectrics there is also another potential problem of having too high of a dielectric constant. If the dielectric constant is too high, there is an effect that is called fringing field effect which adversely affects the performance of the transistor. This has to do with excessive coupling between the gate and the source/drain. Thus, the materials that are being developed desirably have a range typically between 20 and 40 for the dielectric constant. This range may change somewhat as the technology develops further.
Another aspect of a desirable high K dielectric is in terms of its equivalent capacitance to that of a certain thickness of silicon oxide. Silicon oxide has been so commonly and effectively used that it has become a standard and the industry often describes certain characteristics in terms of its relationship to silicon oxide. In this case, the typical desirable silicon oxide equivalent thickness is between 5 and 15 angstroms but with silicon oxide of 5 to 15 angstroms it has problems with leakage, reliability, growth rate, and uniformity. Thus, when a film is that small there can be difficulties in manufacturing it as well as using it. The desirable coupling is to have a dielectric that has the equivalence of the thickness of 5 to 15 angstroms of silicon oxide but a greater actual thickness.
High K dielectric films which include aluminum have been developed, yet aluminum is known to cause high interface state density and degraded mobility in silicon based devices.
Thus, there is a need for a dielectric film which has a dielectric constant within a desirable range, the ability to be made of high integrity, a thickness in a desirable range, does not degrade mobility or cause high interface state densities, and has the ability to be made in a manufacturing process.


An analog control application specific integrated circuit (ASIC) apparatus for a high voltage power supply (HVPS) in an image for apparatus, and a method for controlling the HVPS are provided. The HVPS includes a transformer transforming an AC signal to a high voltage signal and a voltage doubler outputting a DC high voltage for the HVPS. The ASIC includes an analog control circuit configured as a one-chip ASIC that converts a predetermined DC level signal to a high frequency switching signal using a switching component and outputs the converted high frequency switching signal to a primary winding of the transformer. If the high voltage output signal output from the voltage doubler is not feedbacked, the switching component high frequency switches a received driving signal of a gate driver, and outputs the high frequency switched signal to the transformer.

1. Field of the Invention
The present invention relates to a high voltage power supply (HVPS) of an image forming apparatus and a method for controlling the HVPS. More particularly, the present invention relates to an analog control application specific integrated circuit (ASIC) apparatus for an HVPS in an image forming apparatus.
2. Description of the Related Art
FIG. 1 is a control block diagram of a high voltage power supply (HVPS) for one output. The HVPS for one output includes a pulse width modulation (PWM) input unit 100, a low pass filter (LPF) 110, a voltage controller 120, an oscillator 130, a transformer 140, a voltage doubler 150, and a feedback unit 160. FIG. 2 is an illustration of a circuit diagram of FIG. 1.
The PWM input unit 100 receives a PWM input signal of several KHz, and an output voltage level is determined according to a duty ratio of the PWM input signal. The LPF 110 converts the PWM input signal to a DC signal using an RC two-stage filter, and the converted DC signal is used as a reference signal for controlling an output voltage. The voltage controller 120 operates as a differential circuit and a controller in which an error signal is amplified based on the output voltage reference signal output from the LPF 110 and a voltage sensor signal to detect an actual feedbacked output voltage. The oscillator 130 changes a voltage between an emitter and a collector of a transistor by controlling a magnitude of a base current of the transistor based on an output of the voltage controller 120. When the voltage between the emitter and the collector of the transistor in the oscillator 130 is changed, a voltage of the primary winding of the transformer 140 connected to the oscillator 130 in series is changed. Then an output voltage is induced due to a high turn ratio. The voltage doubler 150 generates a final DC high voltage from a secondary voltage of the transformer 140 using a voltage doubling circuit including a diode rectifier and capacitors. The feedback unit 160 is a protect circuit sensing the final DC high voltage, distributing the output voltage through a resistor, and preventing an abnormal voltage from being applied.
As described above, many components should be assembled to construct the analog control unit in the primary side of the transformer 140. That is, the analog control unit is constructed with resistors, capacitors, transistors, integrated circuits (ICs), and diodes as shown in FIG. 2. FIG. 3 is an example of a conventional analog control unit of the HVPS. Since there are a number of components, the number of procedures and a working time increase in an assembly process, and a printer circuit board (PCB) space should be prepared. In addition, an output voltage may be distorted due to a characteristic deviation between the components, and a unit component may be rendered defective due to an outside cause.
Accordingly, there is a need for an improved high voltage power supply in an image forming apparatus with reduced components.

Analog control ASIC apparatus for high voltage power supply in image forming apparatus and method for controlling high voltage power supply


The dispenser is a rigid type multi-chamber, refillable dispenser where only the substance containing chambers need to be discarded and replaced. At the point of the chambers interconnecting into the upper portion of the dispensers there is a cutter to break the seal on the chambers. In operation stabilized piston rods fit into each chamber and push against pistons having a deformable upper surface to expel the substance. The refill chambers have off-center exit openings whereby the distance to the dispenser nozzle exit is minimized. The push rods are stabilized by being of a size and shape to be proximate the walls of the chambers while actuating the pistons.

This invention relates to multi-chamber dispensers for viscous substances that are adapted to receive sets of refill chambers. More particularly, it relates to the dispensing of two or more substances that are not storage stable and thus cannot be contacted or mixed until the time of use.
There is a need in the dental care area for the delivery of two or more substances that are reactive with each other or which to some degree are not storage stable in the presence of each other. This problem is solved by the use of a multi-chamber dispenser where the substances do not contact until dispensed. Examples of such substances are baking soda and various peroxide yielding materials and stannous fluoride and pyrophosphate compounds. There are yet other substances that advantageously are applied to teeth and gums together in order to achieve a particular therapeutic effect that cannot be mixed until the time of use.
There are various types of dispensers that have been used to dispense two or more non-compatible substances. For viscous materials these primarily include tubes and rigid pump dispensers. Illustrative of tube dispensers developed for this purpose are those described in U.S. Pat. No. 1,363,064; U.S. Pat. No. 1,698,404; U.S. Pat. No. 1,699,532; U.S. Pat. No. 2,819,723; and U.S. Pat. No. 3,105,615. In U.S. Pat. No. 1,353,064 there is disclosed side-by-side tubes, two tubes with a longitudinal separatory wall and two tubes created by a horizontal barrier with an opening at each end. U.S. Pat. No. 1,698,404 discloses a tube within a tube. In U.S. Pat. No. 1,699,532 there is shown a variation of a tube within a tube. In U.S. Pat. No. 2,819,723 there is shown a hair dying apparatus consisting of a dispensing comb and brush connected to a two tubes. In U.S. Pat. No. 3,105,615 there is shown a pair of side-by-side aligned tubes.
Another type of multi-chamber dispenser is the rigid pump dispenser. This type of dispenser is illustrated by U.S. Pat. No. 4,040,420; U.S. Pat. No. 4,046,288; U.S. Pat. No. 4,121,739; U.S. Pat. No. 4,747,517; U.S. Pat. No. 4,949,873; U.S. Pat. No. 5,020,694 and U.S. Pat. No. 5,056,906. U.S. Pat. No. 4,040,420 discloses a dual chamber device with two essentially cylindrical cylinders and hand actuated piston rods that separately move the pistons. The product converges at the exit and is co-dispensed. U.S. Pat. No. 4,046,288 discloses a related device where the pistons are moved on threaded piston rods. In U.S. Pat. No. 4,121,739 there is disclosed a particular seal construction on the pistons in a pump dispenser. In U.S. Pat. No. 4,747,517 the two pistons are described to be hemispherical. Related semicircular pistons are shown in U.S. Pat. No. 4,949,873. U.S. Pat. No. 5,020,694 discloses a dispenser where there is added structure to cause the dispensed substances to flow together. In related U.S. Pat. No. 5,395,827 there is disclosed a dual chamber dispenser that is adapted to use refill chambers. These various references illustrate the present state-of-the-art of multi-chamber dispensers, and in particular multi-chamber dispensers and refillable multi-chamber dispensers.
Each of these prior art dispensers has some problems. The tube dispensers do not guarantee a constant flow of each substance. If one tube is squeezed with more force than the other, more of the substance in that tube will be dispensed. This is a significant drawback. In the rigid dispensers the dispenser must be refillable. If not refillable there will be too much waste of plastic packaging. And some units that are refillable do not conserve the use of plastic. In U.S. Pat. No. 5,289,949 the entire top piece that includes a shroud, nozzle and closure are discarded and replaced. Only the lower housing with the piston rods is retained. This conserves little of the plastic of the dispenser.
The present dispenser addresses these issues and solves these problems. The two or more substances are dispensed in given amounts. The only components that are discarded after use are the chambers that contained the substances that have been dispensed. All of the other components are reused. Also, the flow path from the chambers to the dispenser exit is shortened. Pistons with a deformable upper surface are used to more fully expel all of the substances from the chambers. Other features include stabilized piston rods and the automatic puncturing of the seal on the refill chambers when the refill unit is inserted into the dispenser. A cutter located in the upper portion of the dispenser cuts the seal on the chambers and rolls the seal outwardly so that remnants of the seal will not affect the dispensing of the substances. This is automatically accomplished as the set of refill chambers is inserted into the dispenser.


The present invention relates to a method for non-destructive, contact or non-contact inspection of composite assemblies using radiation having a frequency in the terahertz range (10 GHz-10 THz) of the spectrum, whereby said method is implemented as an embodiment of the system for non-destructive, contact or non-contact inspection of composite assemblies using terahertz radiation, that is also claimed under the present invention. Said method enables the forming of a two or three-dimensional image of the material structure of an assembly of composite materials, from which image detection and analysis of material conditions of the composite materials forming said composite assemblies is possible, irrespective of the way that the composite materials forming said composite assemblies were joined together, and without the need for a priori knowledge about the structural characteristics, shape or configuration of said composite materials (for instance layered, foam, placed on metal substrate).

Nowadays the term "composite materials" or "composites" is often heard when referring to fibre-reinforced polymer materials. Originally, however, the term refers to materials made from two or more constituent materials with significantly different chemical or physical properties, that, when combined, produce a material with different characteristics from the individual components. Although there are also metal composites, the term "composite materials" will hereafter in this document mainly refer to materials that are (partially) transparent for "terahertz radiation". These materials include glass fibre and ceramic materials, as well as different kinds of materials with internal "honeycomb structure" and foams, which are widely used nowadays in especially the aerospace, automotive, nautical and wind energy industries, as well as in building construction and for the production of electronic components. The use of these materials is ever increasing because of their advantageous characteristics like low weight, high strength and high durability. Many essential parts of airplanes, cars, ships, spacecraft and wind turbines are presently made of (assemblies of) composite materials. Safety regulations require that such assemblies of composite materials are regularly inspected for timely detection of possible internal or external structural flaws. Conformity testing even requires that every product undergoes such inspection when it leaves the production line. In most cases it is undesirable to temporarily remove a composite assembly from the structure of which it forms a part, for inspection, for instance because of the operation schedule of an aircraft, or because of the size of the composite assembly, for instance in case of a ship hull. A solution to this is to bring the inspection equipment to the composite assembly that is to be inspected. This is called "non-destructive testing". In case the inspection method does not require any contact between the inspection system and the composite assembly, this is called "non-contact testing". However, the method according to the present invention is also suited for contact testing. In some situations it may be important that changes in material conditions and structural integrity are detected as they occur and can be monitored in real time. This is called "condition monitoring". The method according to the present invention can also be advantageously applied in situations where such condition monitoring is required.
Some of the more traditional non-destructive inspection methods, known from prior art, are the ones using for instance X-rays or ultrasound. The main drawback of the use of X-ray inspection of composite assemblies is the need for additional safety requirements which makes large scale application less feasible commercially. A serious drawback of the use of ultrasound for inspection of composite assemblies is the fact that the ultrasound waves are scattered (no transmission, no reflection), partially or completely, by many of the adhesives that are frequently used in composite assemblies. Because of the mentioned drawbacks, X-ray and ultrasound inspection are not suitable for many applications where inspection of composite assemblies is required.
At the end of the 1990's so-called "terahertz imaging" emerged as a tool for inspection of material structures. The THz frequency range is the frequency range between, approximately, 10 GHz and 10 THz, between the microwave and infrared parts of the spectrum. The use of THz radiation makes excellent contrast mechanisms and high resolution imaging possible. Non-polar liquids, dielectric solids and gases are at least partially transparent for THz radiation, while metallic surfaces totally reflect THz waves. The main fields of application were originally security (detection of the material of, for instance, concealed weapons and explosives) at airports, analysing biological materials, analysing dielectric materials, determining geometrical properties of objects, like length, width and thickness, determining material properties like density and contamination and imaging of objects and material samples (for instance layered structures).
Initially the equipment to be used to produce, detect or process terahertz radiation was very expensive, hence widespread use was not economically feasible and remained limited. Since about 2005 this gradually changed because of new technological developments in the THz field, and an increasing number of THz systems and components have been developed and patented since then.
The object of the present invention is to present a method for non-destructive, contact or non-contact inspection of composite assemblies using terahertz radiation, whereby at least one of the materials in the assembly is (partially) transparent for said terahertz radiation, which method is independent of the way that the composite materials forming said composite assemblies were joined together, and without the need for a priori knowledge about the structure, shape or configuration of said composite materials (for instance layered, foam, placed on metal substrate etc.)
From prior art several methods are known for inspection of material structures using THz radiation. For instance the document US 2007/0090294 A1 describes a method where a liquid is applied to the surface of an object under test, whereby the said liquid absorbs THz radiation in a different manner than the structure/material of the object under test and thus provides the contrast for THz imaging. A significant drawback of the said method is the fact that it is limited to inspection and detection of surface material conditions, like cracks and recesses, that are in direct contact with the object surface so that the said liquid can penetrate. Another serious drawback is the fact that the method requires that excess liquid is removed from the object before imaging. This requires cumbersome actions like wiping, heating or blow-drying. The method according to the present invention is not limited to surface inspection and requires no additional actions like the use of fluids for imaging contrast purposes.
Another prior art document, U.S. Pat. No. 7,876,423 B1, is directed at detecting microstructural and thickness variations in dielectric materials using THz energy. The described method is mainly directed to the inspection of sprayed-on foam on a metal container, i.e. the Space Shuttle external fuel tank thermal protection and is not specifically directed at the inspection of composite assemblies. The method according to the present invention does not require prior knowledge about the structure, shape and configuration of the materials under inspection. It suffices to know that at least one of the materials in the assembly under inspection is (partially) transparent for terahertz radiation.
The non-patent prior art references C. Jansen, S. Wietzke, H. Wang, M. Koch and G. Zhao, "Terahertz Spectroscopy on Adhesive Bonds", Polymer Testing, 2011, 30(1), pp. 150-154, and S. F. Durrschmidt, S. Wietzke, C. Jansen, H. Wang and G. Zhao, "Terahertz testing of adhesive bonds", 36th. International Conference on Infrared, Millimeter and Terahertz waves (IRMMW-THz), 2011, pp. 1-7, are concerned with inspecting the integrity of adhesive bonds between polymer materials. It should be clear to the reader that the method according to the present invention is not limited to the inspection of adhesive bonds but is aimed at the detection and analysis of a wide range of material conditions within composite assemblies (for instance cracks, recesses, internal cavities, damaged adhesive joints, density or thickness variations, porosity, delamination, inclusions, etc.)
As such the method according to the present invention aims to provide solutions for the limitations and drawbacks associated with the prior art in the relevant field.
The present invention further relates to a system for non-destructive, contact or non-contact inspection of composite assemblies using terahertz radiation, said system according to the present invention being characterised in that the system comprises such electronic and electro-optical components that it can illuminate an assembly of composite materials with radiation having a frequency in the so-called "Terahertz range" (10 GHz-10 THz.), detect the radiation reflected from and/or transmitted through the said assembly of composite materials, record the spatially resolved reflection and/or transmission responses, construct a two or three-dimensional image from the said spatially resolved reflection and/or transmission components and present said image to the user of the system. This enables measurement of the amplitude and phase of the detected signal with very high dynamic range (>60-70 dB) and construction of high-detail output images.
The document A. M. Baryshev, W. Jellema, R. Hesper, W. Wild, "Reflection Measurement of Absorption Coatings using 600-670 GHz Vector Network Analyzer", 18th International Symposium on Space Terahertz Technology, March 2007, California Institute of Technology, Pasadena, Calif., USA, discloses the construction and function of a Vector Network Analyzer (VNA) that is equipped with such tunable solid state submm signal sources, that the function of the VNA is extended into the terahertz frequency range. Some of the advantageous characteristics of the said extended VNA, that was developed by SRON—The Netherlands Institute for Space Research, are employed within the system according to the present invention, to enable the forming of a two or three-dimensional image of the material structure of an assembly of composite materials, from which image detection and analysis of material conditions of the composite materials forming said composite assemblies is possible, provided that at least one of the composite materials in the assembly is (partially) transparent for said terahertz radiation, but irrespective of the way that the composite materials forming said composite assemblies were joined together, and without the need for prior knowledge about the structure, shape or configuration of said composite materials (for instance layered, foam, placed on metal substrate etc.). As such the method according to the present invention aims to provide solutions for the limitations and drawbacks associated with the prior art in the relevant field.

Method and system for inspection of composite assemblies using terahertz radiation

STICHTING SRON—NETHERLANDS INSTITUTE FOR SPACE RESEARCH


An organic electroluminescence device, and a method of manufacturing the same, where the device includes a substrate, a first electrode formed on the substrate, an organic layer formed on the first electrode and including at least an organic light-emitting layer, and a second electrode formed on the organic layer. The second electrode is made of an Mg—Ag layer having a thickness in a range of 170 Å to 200 Å.

1. Field of the Invention
The present invention relates to an organic electroluminescence device and a method of manufacturing an organic electroluminescence device, and more particularly to an organic electroluminescence device using an Mg—Ag layer as a cathode electrode ("cathode") and a method of manufacturing the organic electroluminescence device.
2. Discussion of the Background
Generally, an organic electroluminescence device includes organic light-emitting layers between an anode electrode ("anode") and a cathode. Applying a voltage between an anode and a cathode injects holes and electrons into the organic light-emitting layer from the anode and the cathode, respectively. The holes and the electrons recombine in the organic light-emitting layer to generate excitons, which emit light when transitioning from an excited state to a ground state.
The cathode electrode may have a low work function so that it may easily inject electrons into the organic light-emitting layer. For example, magnesium, which has a work function of 3.46 eV, can be used to form the cathode. However, magnesium may react with external oxygen or moisture, making it difficult to implement a stable organic electroluminescence device.
U.S. Pat. No. 4,885,211 discloses an organic electroluminescence device with a cathode including a magnesium—silver (Mg—Ag) alloy to solve the above-mentioned problem. As a result, an organic electroluminescence device having a long lifespan can be obtained. However, since the cathode may comprise Mg having a thickness of 2,000 Å and Ag having a thickness of 250 Å or less, its overall thickness may deteriorate light transmittance. Therefore, such a structure may not be applied to a top-emission light-emitting structure, but only to a bottom-emission light-emitting structure.
In order to solve such a restriction, U.S. Pat. Nos. 6,030,700, 6,075,316, 6,548,956, and 6,596,134 disclose a cathode including a thin Mg—Ag layer and a transparent conductive oxide (TCO) layer made of ITO, IZO, etc. is formed on the Mg—Ag layer to reduce the cathode's resistance. However, in the above-mentioned patents, when the Mg—Ag layer is 100 Å or less thick, the cathode is formed in a shape of an island, and when the Mg—Ag layer is greater than 200 Å thick, the light transmittance deteriorates. Therefore, it may not be feasible to use such organic electroluminescence devices in a top-emission light-emitting structure. Additionally, the TCO layer is formed on the cathode. Accordingly, when the TCO layer is formed using a sputtering method, dark spots 1 and leakage current 2 may be generated due to sputter damage, as shown in FIG. 1 and FIG. 2.

Organic electroluminescence device and method of manufacturing the same


Some embodiments of the invention provide a dart that contains an HE payload, two time-delay fuses, one providing a relatively longer delay and the other providing a relatively shorter delay and two triggering mechanisms for triggering the fuses. The first triggering mechanism, which triggers on contact with a mine lid, triggers the relatively shorter time-delay fuse. The second mechanism, which triggers on overburdening exposure to water, sand, or soil, triggers the relatively longer time-delay fuse.

In anticipation of an amphibious military attack along a particular stretch of beach, defenders might deploy anti land-craft mines and anti-tank mines along the beach zone. The assault force will typically seek to defeat the mines via a counter-mine system before landing on the beach.
According to one proposed counter-mine system, hundreds of thousands of small caliber (e.g., 50 caliber, etc.) "darts" that contain high explosive ("HE") material are rained-down upon the mine-laden beach zone. The darts are delivered via missile(s) from military aircraft. In one design, upon impact with a mine casing or lid, a brief delay timer within the dart is initiated. The delay provides time (e.g., 500 microseconds, etc.) for the dart to penetrate the lid and reach the mine's explosive (e.g., TNT, etc.) payload. After this brief delay and with the dart's HE material within the mine's payload, the dart's HE material is detonated, thereby neutralizing the mine.
If a dart does not impact a mine, its timer will not be initiated. If this occurs, the dart will simply come to rest, unexploded, a few feet into the sand or soil of the beach zone. As a function of the mine-field density, tens of thousands or hundreds of thousands of unexploded darts might litter the beach zone.
Unexploded darts pose an extreme risk to civilians, in particular children. A curious child tampering with an unexploded dart might inadvertently trigger its HE payload with dire consequences. Furthermore, HE material recovered from unexploded darts by enemy combatants could be used to create improvised explosive devices that could be used, in turn, against the assault force.