Kits and methods for building devices for analyzing or suppressing vibrations in equipment are provided. An electrical-mechanical transducer is configured to be placed in operative contact with the equipment. The transducer may be directly mounted to a base plate that is configured for being mounted to the equipment. A first device (e.g., a printed circuit board) carrying electronic componentry is configured for transmitting vibration drive signals to the electrical-mechanical transducer. A second device (e.g., a printed circuit board) carrying electronic componentry is configured for receiving vibration sensing signals from the electrical-mechanical transducer. The first and second devices can be interchangeably mounted within a housing that can be mounted to the base plate. The housing may comprise an aperture for receiving the electrical-mechanical transducer.

Structural vibration is one of the key performance limiting phenomena in many types of advanced machinery, such as space launch vehicle shrouds, all types of jet and turbine engines, robots, and many types of manufacturing equipment. For example, semiconductor manufacturing equipment and the equipment used to manufacture micro- and nano-devices are sensitive to structural vibration at ever increasing levels. The positioning accuracy requirements in the most advanced semiconductor manufacturing and test equipment in the market today are on the order of single-digit nanometers.
Because structural vibration depends on many factors that are not easily modeled, such as boundary and continuity conditions, as well as the disturbance environment, it is impossible to design a machine from the first prototype that will meet all vibration requirements. This means that the final steps in analyzing and suppressing vibration are accomplished after the actual production unit has been built. Unfortunately, this is precisely the time that any delay in shipment is the most costly in terms of lost revenue and competitive advantage.
To address this shortfall, it is known to incorporate vibration analysis and suppression systems into precision equipment. In general, a typical vibration analysis and suppression system includes a multitude of vibration sensors and vibration actuators that are installed on-board the precision equipment in selected locations. The system also includes a control system that transmits control signals in accordance with a vibration suppression algorithm to the actuators during normal operation of the precision equipment to mechanically suppress the vibrations. Using a feedback loop, the sensed vibration information is fed back to the control circuitry, which adjusts the control signals in response to dynamic conditions.
Using a combination of feedforward and feedback control theory, the vibration suppression algorithm used by the control circuitry to generate the control signals is selected in accordance with vibration information acquired by the sensors during vibration testing of the precision equipment, preferably before the precision equipment is operated in the field.
The vibration analysis portion of this process is typically implemented during initial vibration testing. In particular, sensors are affixed to select locations on the precision equipment, and operated to sense the response of the precision equipment to artificially induced environmental vibrations. The sensed vibrations are then analyzed to ascertain the nature of the vibration suppression algorithm to be programmed into the control circuitry. Once the algorithm has been programmed, at least some of the sensors will then be replaced with the actuators that will be used to generate the control signals that suppress the environmental vibrations during the feedback control portion of the vibration testing process (to ascertain performance of the control algorithm), as well as during normal operation of the precision equipment in the field (to improve performance by suppressing vibrations at key locations).
The feedback and feedforward control portions of the vibration suppression process are typically implemented both during vibration testing after the vibration suppression algorithm has been programmed into the control circuitry, as well as during normal operation of the precision equipment in the field. In particular, in response to the normal operating environment, the sensors feed back vibration information to the control circuitry, which in response, generates the vibration suppression control signals, the parameters of which are continually adjusted in real-time in response to the varying vibration conditions. In case of predictable and repeated disturbance, such as from cooling fans, etc., the disturbance information as measured by dedicated sensors can be fed forward to the controller to improve control performance even further. These control signals are transmitted to the actuators, which vibrate to suppress the environmental vibrations. Minor adjustments of the vibration suppression algorithm as previously designed can then be performed based on the actual performance of the vibration suppression system.
There are several unresolved issues that can be addressed during vibration testing. For example, because the sensors must be affixed to key locations in the precision equipment in a robust manner (typically using a bonding material, such as epoxy) to ensure the accuracy of the sensed vibration information during feedforward vibration testing, replacement of the sensors with actuators for feedback vibration testing and normal operation of the precision equipment can be a tedious process. In addition, the analysis of the sensed vibration information and programming of the vibration suppression algorithm may sometimes be accomplished by third parties that are remote from the equipment site, and who must, therefore, repeatedly interface with personnel on-site during the iterative vibration information acquisition and algorithm programming process.
There are also unresolved issues that can be addressed during normal operation of the precision equipment in the field. For example, control circuitry currently used in vibration analysis and suppression systems is located remotely from the vibrating part of the precision equipment, typically being hardwired to the on-board sensors and actuators even during the normal operation of the precision equipment. There are several disadvantages to this architecture.
For example, the connecting cables extending from the precision equipment stationary parts, such as electronics cabinets, to the moving parts, such as stages and end effectors, often hinder its normal operation—especially in the case where the sensors and actuators are located on rotating or rapidly translating components. Such cables may in fact introduce unwanted vibrations, at least partially negating the benefits of the vibration suppression system. Significantly, because most vibration actuators, such as piezoceramics, voice coils and others, require a relatively large voltage (typically in the hundreds of volts), the cables are quite bulky, providing a further hindrance to normal operation of the equipment. In addition to the mechanical awkwardness, the use of cables (both from the sensors and to the actuators) also provides a long path through an environment rich in electromagnetic noise that can be injected into the analog signals transmitted between the sensors/actuators and the remotely located control circuitry. As a result, proper control of the actuators may be compromised due to corruption of either the control signals transmitted from the control circuitry to the actuators or the sensing signals transmitted to the control circuitry from the sensors, or both.
There thus remains a need for improved vibration analysis and suppression systems and methods for testing and implementing such systems.

Kit and method for constructing vibration suppression and/or sensing units


This invention describes a new, high-efficiency method of selecting and advancing pollen donator strains in a breeding or product advancement program, wherein the pollen donator strains are specifically selected to maximize product attributes. Embodiments of this invention relate to the use of a mix of pollen from multiple potential pollen donator strains to cross-pollinate a female corn plant, allowing for single-plant performance comparisons. The comparisons of products from the single plant or less experimental unit allow for the selection of those pollen donator strains that maximize desirable results.

The current invention has application to the field grain yield trials, usually conducted for the purpose of breeding and product advancement. In one embodiment, the invention is applicable to maize (corn) yield trials. The trials may be conducted to analyze other plant product attributes in addition to yield. The term "breeding and product advancement" is used herein to mean the practice of improving the genetic potential and resulting yield of a crop, which may also include improvement of other crop attributes. A field used for the purposes of breeding and product advancement is generally referred to as a research test plot, a product development test plot, or a pollinator test plot. The term "high efficiency" is used herein to mean a statistically significant, measurable improvement over existing known methods in terms of resource utilization (i.e., land and labor) and total number of plants required to make an informed decision regarding yield benefit or other crop attribute benefits. The term "pollen donator strain" is used herein to mean a strain being used as a pollen donor for pollinating another strain of the same species. A pollen donator strain is a strain whose pollen is intended to be collected, and optionally conditioned and/or preserved and stored, prior to being used to make pollinations on female plants. With respect to maize, this contrasts with a conventional system in which corn plants are allowed to self-pollinate, or in which pollen from a second corn strain is planted alongside the first strain, such that the second strain acts as the pollinator for the first. The pollen donator strains of interest are those which have shown greater yield benefits or other benefits in comparison with other pollen donator strains on that female in previous studies. In the context of this disclosure, a pollen donator strain is being tested for its ability to increase grain yields and other desirable product characteristics. The yield may be increased as a result of using that strain as the sole pollen donator for a grain production field, or using the inbred in conjunction with one or more other inbreds as pollen donators for a grain production field. The indefinite articles "a" or "an" carry the meaning of "one or more" in the context of this disclosure.
For the purposes of this disclosure and its applicability to breeding and product advancement, the term "self-pollen," which is a single plant's own pollen, includes "sib-pollen," which is pollen from genetically identical plants. Likewise, the term "self-pollination" includes "sib-pollination," which is pollination occurring with pollen from a sibling plant, and which has the same effect in the resulting grain as self-pollination. For this disclosure, the term "selfing" means pollination either by self-pollination or sib-pollination, both being variants of pollination of plants who share the same genetics. "Cross pollination," for the purposes of this disclosure, refers to genetic exchange resulting from pollen produced by another genetically distinct plant. Thus, cross pollination is the introduction of pollen that is derived or sourced from separate plants that are genetically distinct from the pollen which will be shed from the plants within the field or alternate growth environment.
At present, seed companies do not purposefully select and advance pollen donator strains for the primary purpose of using them as a source of pollen to be collected in large quantities, conditioned or preserved, and then used to pollinate plants in a different location. Rather, seed companies currently test and advance strains for the ability of the progeny seed to generate yield, high oil, or other desirable traits exclusively in a field-based setting where those pollinator plants act as pollinators to neighboring plants. In current practices, the breeding and advancement of strains is reliant upon self-pollination rather than cross-pollination, so the testing and advancement of pollen donator strains has not been previously practiced. The disclosed invention uses the testing and advancement of pollen donator strains to create an index of specific pollen strains that provide the greatest improvement in yield and other desirable agronomic traits when used as source to pollinate female plants of known genetic background. Further, on the breeding products, such as grain, different strains are distinguishable from one another based on differences in either visual or internally detectable seed characteristics.
In 1881, botanist Wilhelm Focke coined the term "xenia" to refer to the effects of pollen on maternal tissues in a plant. At the time, the endosperm was thought to be maternal tissue. Over time, the term "xenia" or "xenia effect" has been used to describe the effect of pollen genes on the seeds and fruit of a fertilized plant, which includes effects on the endosperm (Bulant et al. ((2000) Crop Sci. 40: 182-188). The present disclosure takes advantage of the xenia effect by using it to establish differences in product attributes from different sources of pollen. In some embodiments, the invention may be used to identify improved product attributes.
"Product attributes," for the purpose of this disclosure, are measurable characteristics of breeding products. In one example, product attributes may be measurable characteristics of a maize kernel. Kernel attributes may include, but are not limited to, oil content, protein content, starch content, kernel weight, test weight, kernel size, kernel color and a variety of biochemical measurements that can be made on the kernel, such as amino acid levels, tocopherol levels, levels of various nutrients, micro-nutrients, vitamins, flavonoids, and other compounds. Products include, but are not limited to, seed, grain, fruit, and other ovarian tissues that result from plant breeding.
Numerous studies have shown the breadth and diversity of the xenia effect with respect to maize—that is, the influence of the pollen source on the development of the kernel. Among the earliest demonstrations (Kiesselbach, T. A. (1926) Neb. Agric. Exp. Stn. Bull. 33:1-69; Kiesselbach, T. A. & W. H. Leonard (1932) J. Am. Soc. Agron. 24:517-523), Kiesselbach reported that relative to self-fertilization, cross fertilization increased kernel weights on average by 10.1% (11.8% for embryos, 10.4% for endosperm, and 3.2% for pericarp). Tsai and Tsai (Tsai, C. L. & C. Y. Tsai (1990) Crop Sci. 30: 804-808) showed an increase in grain yield of about 30% and in increase in kernel protein content of about 44% in an early hybrid when it was pollinated by a late hybrid. Using maize inbred lines with normal endosperm, Bulant et al. ((2000) Crop Sci. 40: 182-188) reported a relative advantage in weight of cross-fertilized to self-fertilized kernels as great as 13%. Breeding studies at South Dakota State University confirm that cross pollination of specific hybrids can increase kernel size and protein content, and that cross pollination between hybrids of similar maturity accounts for 40 to 60% of kernels formed in mixed stands (Wicks III, Z., (1994) Proc. Annual Corn and Sorghum Res. Conf. 4.
The development of kernels can be altered by cross pollination (Tsai, C. L. & C. Y. Tsai (1990) Crop Sci. 30: 804-808; Poneliet, C. G. and D. B. Egli, (1983) Crop Sci. 23:872-875). Poneliet and Egli (1983) showed that the duration of the effective filling period from cross-fertilization often was greater than that from self-fertilization. Pollen source also affects endosperm development in terms of protein content, amino acid profile, and translucency. (Pixley, K. V. and M. S. Bjarnason (1994) Crop Sci. 34:404-408; Bulant et al. (2000) Crop Sci. 40: 182-188). At 14 days after pollination, the advantage of cross-fertilization on average was 28.8% for starch content, 24.8% for ADP-glucose-pyrophosphorylase (EC 18.104.22.168) activity, and 24.1% for neutral invertase (EC 126.96.36.199) activity (Bulant et al. (2000) Crop Sci. 40: 182-188). Tsai et al. ((1991) J. Sci. Food Agric. 57: 163-174) modified P3732 endosperm through cross-pollination, which significantly increased kernel weight, kernel protein content and grain yield across a range of fertilizer N treatments. The additional nutrients translocated into developing kernels of P3732 cross-pollinated plants were mainly derived from increases in duration of dry matter production and N uptake by vegetative tissues (Tsai et al. (1991) J. Sci. Food Agric. 57: 163-174). These well-established impacts on kernel composition are the basis for the top-cross method of producing high oil corn.
The top-cross system for high oil corn grain production was a method used in the 1990s and early 2000s in which high oil was induced by planting a blend of a male sterile hybrid (˜93%) and a male fertile high oil pollinator germplasm (7%). The result was an increase in oil from about 3-4% for normal commodity grain, to about 6% for the high oil top-cross grain. The high oil grain brought a premium price per bushel at the grain elevator. (Thomison, P. R. et al. (2002) Agron. J. 94: 290-299) A new pollinator would be derived from these crosses, but the plot size was very large in order to maintain a level of minimum purity in the middle of the plot from which the oil and yield data was being collected.
The extent of the xenia effect varies with the male and female genotype. The greater the genetic difference between the male pollen source and female, the greater the expected response to cross-pollination. (Leng, E. R., (1949) Agron. J. 41:555-558; Bulant, C. and A. Gallais, (1998) Crop Sci. 38: 1517-1525). The cross-fertilization advantage was less for single-cross hybrids than for their inbred parents, and the advantage varies with the male. For crosses between inbreds, the advantage of cross fertilization was 13.8 and 14.5%, but only 2.5% for crosses made with their hybrid (Bulant, C. and A. Gallais, (1998) Crop Sci. 38: 1517-1525). Both pollen and maternal effects impact the response to cross pollination (Seka, D and H. Z. Cross (1995) Crop Sci. 35: 80-85; Seka, D. et al. (1995) Crop Sci. 35: 74-79).
Results of cross pollinations between hybrids observed by Bulant and Gallais (Bulant, C. and A. Gallais, (1998) Crop Sci. 38: 1517-1525) illustrate that cross fertilization can increase the sink strength of the whole ear and that the kernel mass benefit can be observed under unfavorable conditions. The positive xenia effects have been interpreted in terms of source-sink relationships. If the resources are limiting, the increase in sink strength leads to a greater average kernel weight with mixed fertilization than with pure self-fertilization. There was no relationship between the cross-fertilization advantage and the average seed weight of the self-fertilized female or male pollen source. Cross-fertilization advantage was beneficial for small kernels as well as for large kernels (Bulant, C. and A. Gallais, (1998) Crop Sci. 38: 1517-1525).
Given that the intent of cross pollination is typically to increase yield and improve product characteristics, the varieties that are selected for use in cross-pollination generally both display desirable characteristics that would be expressed in the resulting product. In the case of maize, a pollinator would typically be chosen that resulted in high yield and high starch content in the pollinated kernels.
Pollination success is critical to grain yield. Grain yield is measured as the weight of grain per area of land measured at a given moisture content (for example, 15.5% moisture for corn). Low pollination rates result in poor grain yield. For this reason, grain producers typically rely upon self-pollination and pollination by neighboring plants in the field since they know that the pollination will occur during the correct window of time because the female components of the plant will be ready to receive the pollen. Unfortunately, self-pollination results in inbreeding depression which negatively impacts grain yield (Scheffler et al. (2008) Maydica 53: 189-198) and it is unable to account for changing conditions and stresses that may affect the plant during the growing season.
Given recent advancements in the field of pollen conditioning and preservation (as provided in US20170238535, the entire contents of which are hereby incorporated by reference) and the use of intentional pollination using collected and optionally preserved pollen (as provided in US20160374279 and US20160374280, the entire contents of which are hereby incorporated by reference) for seed and grain production, the ability of using pollen donator strains for the purposes of expressly pollinating field-grown crops has become a feasible production method. The pollen donator strains used in such activities can be carefully characterized and selected based on their ability to maximize grain yield or other desirable product desirable attributes respective to the pollen donators used with a designated female. From this information, a comprehensive database can be assembled for use in selecting a given male pollen donator to bring out the maximum yield response or other desirable responses from a designated female.
Accordingly, there is a need in the industry for an invention which allows for the improvement of efficiency in the selection and advancement of high-yielding pollen donator strains. There is also a need in the industry which allows differences in yield or other desirable product characteristics to be tested all on a single plant, reducing variation caused from plant to plant comparisons and reducing the amount of labour, land and other resources required to conduct conventional plot yield trials. Finally, there is a need in the industry for choices of pollen that can be used to intentionally pollinate a field of crops to provide the highest yield or other desirable product characteristics under a given set of challenging field conditions.

Breeding methods to develop improved xenia pollinators


A resting surface attachable to a chair arm for supporting a computer peripheral is provided including a top resting plate and at least a pair of legs coupled to the top resting plate. Further provided is a clamping assembly for clamping the legs to the chair arm such that a computer peripheral may be situated on the top resting plate during use.

1. Field of the Invention
The present invention relates to computer desks and more particularly pertains to a new chair arm-mounted resting surface for a computer peripheral for providing a surface close to a chair in which a computer user is sitting to support a computer peripheral.
2. Description of the Prior Art
The use of computer desks is known in the prior art. More specifically, computer desks heretofore devised and utilized are known to consist basically of familiar, expected and obvious structural configurations, notwithstanding the myriad of designs encompassed by the crowded prior art which have been developed for the fulfillment of countless objectives and requirements.
Known prior art computer desks include U.S. Pat. No. 5,388,530; U.S. Pat. No. 5,081,936; U.S. Pat. No. 4,909,159; U.S. Pat. No. 5,030,128; U.S. Pat. No. 5.377,085; and U.S. Pat. Des. 287,741.
In these respects, the chair arm-mounted resting surface for a computer peripheral according to the present invention substantially departs from the conventional concepts and designs of the prior art, and in so doing provides an apparatus primarily developed for the purpose of providing a surface close to a chair in which a computer user is sitting to support a computer peripheral.

Chair arm-mounted resting surface for a computer peripheral


Described herein are compositions, methods, and systems for printing metal three-dimensional objects. In an example, described is a method of printing a three-dimensional object comprising: (i) depositing a metal powder build material, wherein the metal powder build material has an average particle size of from about 10 μm to about 250 μm; (ii) selectively applying a binder fluid on at least a portion of the metal powder build material, wherein the binder fluid comprises an aqueous liquid vehicle and latex polymer particles dispersed in the aqueous liquid vehicle; (iii) heating the selectively applied binder fluid on the metal powder build material to a temperature of from about 40° C. to about 180° C.; and (iv) repeating (i), (ii), and (iii) at least one time to form the three-dimensional object.

Three-dimensional (3D) printing may be an additive printing process used to make three-dimensional solid parts from a digital model. 3D printing can be often used in rapid product prototyping, mold generation, mold master generation, and short run manufacturing. Some 3D printing techniques are considered additive processes because they involve the application of successive layers of material. This is unlike customary machining processes, which often rely upon the removal of material to create the final part. 3D printing can often use curing or fusing of the building material, which for some materials may be accomplished using heat-assisted extrusion, melting, or sintering.

Hewlett-Packard Development Company, L.P.


Apparatus having a cache memory including cache lines configured to cache data sent from an input/output device and an eviction mechanism configured to evict data stored in one of the cache lines based on validity state information associated with the data stored in the one cache line. Each cache line has multiple portions, and validity bits are used to track the validity of respective portions of the cache line. The validity bits are set to predefined values responsive to the number of bytes written into the respective portions in one write transaction. The cache line is evicted by the eviction mechanism when the validity bits corresponding to the cache line all have the predefined values. The eviction mechanism is configured to evict the data even if the cache memory is not full.

Cache memory is a small block of high-speed memory that is typically placed between a data processing unit and a slower main memory. When the processing unit needs to access data stored in the main memory, it first looks to the cache memory to see whether the data is available in the cache. When the processing unit first reads data from the main memory, a copy of that data is stored in the cache as part of a block of information (known as a cache line) that represents consecutive locations of main memory. When the processing unit writes data to the main memory, the data is stored in the cache. When the processing unit subsequently access memory addresses that have been accessed previously or nearby addresses, the processing unit first checks the cache memory rather than the main memory. This approach reduces average memory access time because, when data is accessed at an address in the main memory, later accesses will likely involve data from within the same block (this is the temporal locality principle). The data written into cache memory remains there until certain conditions are met (e.g., the cache memory is full), then a cache line is selected according to a specified criterion (e.g., the one least recently used) and is evicted.
Data caching is typically not done when input/output (I/O) devices write data to main memory because it is unlikely that another transaction will involve the same address as the data previously written by I/O devices. Therefore, a computer chipset that manages data transfers to and from I/O devices typically forwards the write data directly to main memory without caching the data.

Cache memory eviction policy for combining write transactions


A solid-state photomultiplier (SSPM) includes an optical isolation structure therein. The SSPM includes a substrate and an epitaxial diode layer positioned on the substrate. A plurality of avalanche photodiodes (APDs) are fabricated on the epitaxial diode layer and the optical isolation structure is positioned about the plurality of APDs to separate each of the plurality of APDs from adjacent APDs. The optical isolation structure contains at least one of a light absorbing material and a light reflecting material deposited therein to reduce optical crosstalk and dark count rate in the SSPM.

The present invention relates generally to radiographic detectors for imaging and, more particularly, to a solid-state photomultiplier (SSPM) structure with improved crosstalk and dark count rate characteristics.
Typically, in radiographic imaging systems, such as x-ray and computed tomography (CT), an x-ray source emits x-rays toward a subject or object, such as a patient or a piece of luggage. Hereinafter, the terms "subject" and "object" may be interchangeably used to describe anything capable of being imaged. The x-ray beam, after being attenuated by the subject, impinges upon an array of radiation detectors. The intensity of the attenuated radiation received at the detector array is typically dependent upon the attenuation of the x-rays. Each detector element of the detector array produces a separate electrical signal indicative of the attenuated beam received by each detector element. The electrical signals are transmitted to a data processing system for analysis which ultimately produces an image.
As an example, conventional CT imaging systems utilize detectors that convert radiographic energy into current signals that are integrated over a time period, then measured and ultimately digitized. A drawback of such detectors however is their inability to provide data or feedback as to the number and/or energy of photons detected. During image reconstruction, data as to the number and/or energy of photons detected can be used to distinguish materials which appear identical in images reconstructed from conventional systems that do not provide this additional information. That is, conventional CT detectors have a scintillator component and a photodiode component wherein the scintillator component illuminates upon reception of radiographic energy and wherein the photodiode detects illumination of the scintillator component and provides an electrical signal as a function of the intensity of illumination. These detectors, however, are unable to provide energy discriminatory data or otherwise count the number and/or measure the energy of photons actually received by a given detector element or pixel. That is, the light output of the scintillator is proportional to the energy deposition in the scintillator, which is a function of the number of x-rays impinged as well as the energy level of each of the x-rays. Under the charge integration operation mode, the photodiode is not capable of discriminating between the energy level or the count of X-rays received by the scintillator. For example, two scintillators may illuminate with equivalent light intensity and, as such, provide equivalent output to their respective photodiodes. Yet, the number of x-rays received by each scintillator may be different as well as the x-rays' energy, but overall yield an equivalent light output.
In attempts to design scintillator-based detectors capable of X-ray photon counting and energy discrimination, detectors constructed from scintillators coupled to a solid-state photomultiplier (SSPM) have been employed. The SSPM is comprised of a plurality of Geiger-mode avalanche photodiodes (APDs) or "microcells" that amplify each single optical photon from the scintillator into a large and fast signal current pulse. When coupled with a fast scintillator material having a rapid photon decay time, SSPM based detectors can provide a photon counting, energy discriminating CT detector that does not saturate at the x-ray flux rate range typically found in conventional CT systems. An SSPM also provides a high gain with low associated noise that is highly desirable when performing photon counting and energy discrimination.
The benefits set forth above make the use of an SSPM in a detector desirable for numerous reasons; however, there are varying problems that affect current SSPM designs. Typically, SSPMs are constructed with the plurality of Geiger-mode APDs built on a single layer silicon wafer with no isolation structures positioned therebetween. Such a construction allows for optical crosstalk between APDs. That is, a small amount of light is emitted when current flows through a reverse-biased diode, as is the case when an avalanche is initiated in an APD due to the absorption of an incident photon. Because the emitted light has a peak emission of approximately 650 nm, it can travel relatively long distances in silicon before it is absorbed. When the emitted light is absorbed, it can trigger additional avalanche events, which also cause light emission. The final result can be a large number of APDs avalanching for a single photon incident on the device, thus resulting in optical crosstalk.
Conventionally, optical crosstalk between APDs is controlled by maintaining a minimum distance between adjacent APD cells. Such a mechanism for controlling optical crosstalk is only somewhat effective, and additionally, results in a loss of active area in the SSPM. That is, the spacing between adjacent APDs limits the fill factor of the active area of the SSPM and makes it difficult to design APD cell size smaller than approximately 30 microns without substantial active area loss.
Another issue with current SSPM designs is the potentially high dark count rate resulting from the whole bulk of the silicon wafer substrate. That is, a single layer silicon wafer substrate design in an SSPM can result in high diffusion dark leakage, thus adding to the overall dark count rate.
It would therefore be desirable to design a solid state photomultiplier that effectively addresses the problem of optical crosstalk between adjacent APDs. It would be further desirable to design a SSPM that reduces the dark count rate.

Structure of a solid state photomultiplier


A hermetically sealed electric motor compressor, comprising a hermetically sealed casing, a reciprocating compressor unit mounted within the casing and compressing a working fluid, the compressor unit having a first discharge passageway, a valve assembly mounted within the casing and opening and closing the first discharge passageway, the valve assembly having a second discharge passageway, a discharge port mounted to the second discharge passageway within the casing and including a muffler. The muffler defines a plurality of resonance chambers. The discharge port includes a base plate having a projection. The valve assembly includes a reed valve assembly including a reed valve and a valve backer mounted behind the reed valve. The valve assembly includes a valve seat defining a recess receiving the reed valve assembly, and an elastic gasket and a holder elastically holding an end of the reed valve assembly within the recess so that the projection of the base plate pushes the end of the reed valve assembly on the bottom of the recess by means of the gasket. The valve backer limits the degree of opening of the reed valve and accelerates the return speed of the reed valve.

1. Field of the Invention
The present invention relates to hermetically sealed electric motor compressors for use in household refrigerators, e.g., and more particularly to hermetically sealed electric motor compressors having an improved valve assembly opening and closing a discharge port of a compressor unit and an improved muffler mounted to the discharge port of the compressor unit.
2. Background Art
FIG. 1 is a block diagram illustrative of the arrangement of the components of the of such compressor 1000. The hermetically sealed electric motor compressor 1000 comprises an electric power supply unit 100 receiving electric power from the outside of the compressor 1000, an electric motor 200 receiving electric power from the electric power supply unit 100, a reciprocating compressor unit 300 driven by the electric motor 200, a suction port unit 600 and a discharge port unit 700 which communicate with the interior of the reciprocating compressor unit 300 through a valve assembly 500 mounted to the reciprocating compressor unit 300. The suction port unit 600 has a suction passageway 601. The discharge port unit 700 has a discharge passageway 701. The reciprocating compressor unit 300 sucks refrigerant, e.g., freon through the suction port unit 600 and the valve assembly 500, and compresses and discharges said refrigerant through the valve assembly 500 and the discharge port unit 700. The compressor 1000 further comprises a hermetically sealed casing 900 and a resilient support 800 supporting the electric motor 200, the reciprocating compressor unit 300, the valve assembly 500, the suction port unit 600 and the discharge port unit 700 on the interior surface of the casing 900. The compressor 1000 further comprises a self-lubricating system 400 comprising an oil reservoir. The oil reservoir is mounted on the bottom of the casing 900 and holds lubricating oil 401. The self-lubricating system 400 circulates lubricating oil 401 through mechanically moving parts of the motor 200 and the reciprocating compressor unit 300.
Detailed descriptions of the structures and the operations of the parts described above of the compressor 1000 (referred to as a first prior art hereinafter) are disclosed in U.S. Pat. No. 4,573,880 corresponding to an aggregation of Japanese examined patent application publication SHO. 62-30311, Japanese examined patent application publication HEI. 4-48944 and Japanese examined patent application publication HEI. 4-48945. The disclosure of U.S. Pat. No. 4,573,880 is incorporated herein by the reference thereto.
Since the frequency of reciprocation of the piston of the reciprocating compressor unit 300 is as high-speed as 3,000 times/min, a muffler mounted to the discharge port unit 700 and the structure of the valve assembly 500 have required various improvements.
The first prior art discloses a structure in which a discharge port unit 700 having a muffler comprising, e.g., a series of resonance chambers having different sizes increases an effect of noise reduction.
On the other hand, Japanese examined utility model application publication HEI. 2-25986 discloses the structure of a second prior art in which a valve assembly comprises a reed valve opening and closing a discharge port, and a restraining thick plate mounted behind the reed valve and having sufficient angle of opening so as to restrain the degree of opening of the reed valve and accelerate a return speed of the reed valve to increase the compression efficiency of the reciprocating compressor unit. U.S. Pat. No. 4,723,896 discloses a structure of a third prior art in which a valve assembly comprises a reed valve opening and closing a discharge port, and a restraining plate assembly of leaf springs superposed and disposed in a recess defined in a valve seat behind the reed valve and the restraining plate assembly covers an approximately half of the operating portion of the reed valve covering the discharge port so that the reed valve is twisted to open the discharge port and direct discharged fluid along the axis of the discharge port and so that the torsion from the twisted reed valve accelerates the closing speed of the reed valve.
Since in the valve assemblies of the second and third prior arts simple bending stress and torsional stress in the reed valve assembly of the reed valve and the valve backer return the reed valve to the closed position, the closing speed and the closing force of the reed valve are insufficient so that the reed valve cannot sufficiently follow the discharge pressure of refrigerant and a counterpressure alternating at a high speed to sufficiently reduce the volume of refrigerant returned to the discharge hole. Thus a compressor having the valve assembly of the second or third prior art cannot achieve a sufficient performance of compression.
In addition, since the discharge port having the muffler of the first prior art produces a high pressure at the inlets of the resonance chambers to produce a high discharge resistance when the fluid is discharged from a shut-off valve of the valve assembly, this discharge resistance degrades the compression efficiency and causes the muffler to insufficiently deaden noise.

Hermetically sealed electric motor compressor


A burn-in stress control circuit for an integrated memory device, such as DRAM, includes a first logic gate for receiving a burn-in enable signal and outputting an inverted burn-in enable signal, a resistor having a first terminal connected to the input terminal of the first logic gate, a first capacitor connected between the second terminal of the resistor and ground. A first transistor having a control terminal connected to the second terminal of the resistor and a first main terminal connected to a source voltage, is activated only when the burn-in enable signal is a high logic signal, thereby outputting the source voltage to a second main terminal of the first transistor. A second transistor having a control terminal connected to an output terminal of the first logic gate, a first main terminal connected to ground and a second main terminal connected to the second main terminal of the first transistor, is activated only when the burn-in enable signal is a low logic signal. Thus, peak current applied to a memory cell array, and noise can be reduced.

The present invention relates to a burn-in stress control circuit for a semiconductor memory device, and more particularly, to a control circuit that will limit the peak current generated in a semiconductor memory device while burn-in stress is being applied to the device.
During fabrication of a semiconductor memory device, the number of defects generated in a chip increases with the degree of integration of the chip. As the chip becomes more highly integrated, the size of each transistor on the chip is reduced. When the external supply voltage intended for the larger transistor is applied to the smaller transistor, stress associated with a strong electric field increases the failure rate of the transistor. Accordingly, in order to detect defects of the memory cells, and thereby ensure reliability of the chip, a burn-in stress is applied to the chip after fabrication of the chip. During the burn-in, a voltage higher than the external source voltage prescribed in the specification of the chip is applied to the chip for a long period of time at a high temperature, in order to detect a failed device when the chip is completed. By this method, the stress applied to each component or device of the chip increases, to detect initial failure.
FIG. 1 is a circuit diagram of a conventional DRAM semiconductor memory device. Referring to FIG. 1, the circuit includes: a plurality of word line drivers 11; word lines 15 connected to each of the word line drivers 11; a plurality of memory cells 13 connected to the word lines 15; and a row decoder 17 and a PX signal generator 19, both of which are connected to the word line drivers 11. Each of the word line drivers 11 is structurally the same--each comprises one PMOS transistor Q1 and two NMOS transistors Q2 and Q3. The sources of the PMOS transistors Q1 are connected to the PX signal generator 19 and the drains thereof are connected to the word lines 15. The drains of the NMOS transistors Q2 and Q3 are connected to the word lines 15, and their sources are connected to QUIET.sub.-- VSS. The gates of the PMOS transistors Q1 and the NMOS transistor Q2 are connected to the row decoder 17, and the gates of the NMOS transistors Q3 are connected to the PX signal generator 19.
FIG. 2 is a schematic of a conventional burn-in stress control circuit that includes first and second NMOS transistors 21 and 23 having their drains connected together. An inverter 25 has an input terminal connected to the gate of the first NMOS transistor 21 and an output terminal connected to the gate of the second NMOS transistor 23. A wafer burn-in enable signal PWBE is connected to the gate of the first NMOS transistor 21. A word line drive voltage Vpp is applied from the row decoder 17 to the source of the first NMOS transistor 21 and the source of the second NMOS transistors 23 is connected to a ground potential terminal Vss.
Referring to the circuit shown in FIG. 2, a method of applying the burn-in stress to a memory cell transistor Q4 of FIG. 1 is described as follows. Here, only the word line driver 11 having the PMOS transistor Q1, the first NMOS transistor Q2 and the second NMOS transistor Q3, and a device Q4 connected thereto will be described. In a state of standby before the burn-in stress is applied or a read/write operation occurs, both a word line enable signal output from the row decoder 17 and a normal mode voltage output from the PX signal generator 19 have a high logic level. Consequently, the PMOS transistor Q1 is deactivated, and the first and second NMOS transistors Q2 and Q3 are activated, and thus the word line is electrically connected to a QUIET.sub.-- VSS line.
When PWBE is a low logic signal, a fourth NMOS transistor 23 is activated, and thus the QUIET.sub.-- VSS line is grounded through Vss. Accordingly, the memory cell transistor Q4 is deactivated, and thus the burn-in stress is not applied to the memory cell transistor Q4.
Next, when the circuit is in a burn-in mode for applying the burn-in stress, the PWBE is enabled, by applying a high logic signal thereto. Then, the third NMOS transistor 21 is activated and the fourth NMOS transistor 23 is deactivated, and thus a burn-in stress boltage (Vpp-Vt) is applied to the QUIET.sub.-- VSS line. Here, Vt denotes threshold voltage of the third NMOS transistor 21. Since the first and second NMOS transistors Q2 and Q3 are activated, the burn-in stress voltage (Vpp-Vt) is transferred to the word lines 15. Accordingly, the memory cell transistor Q4 is activated by, and thus the burn-in stress is applied to the memory cell transistor Q4.
When the burn-in stress is completed after a predetermined period of time, PWBE is disabled, the third NMOS transistor 21 is deactivated, the fourth NMOS transistor 23 is activated, and thus the QUIET.sub.-- VSS line and the word line are both grounded through Vss, thereby stopping the application of the burn-in stress to the memory cell transistor Q4.
In order to reduce the noise generated in the QUIET.sub.-- VSS line, the resistance of the fourth NMOS transistor 23 is minimized by structurally enlarging its size. The third NMOS transistor 21 is also structurally enlarged, since the word line may come into contact with the bit line during the fabrication of the semiconductor, and when the PWBE is enabled, the QUIET.sub.-- VSS line is electrically connected to the bit line, and thus, the voltage level of the QUIET.sub.-- VSS line is reduced to (Vpp-Vt) or less.
When PWBE is changed to a low logic signal or a high logic signal, the voltage of each word line is changed to Vss or (Vpp-Vt). Here, since the third and fourth NMOS transistors 21 and 23 have a large structure, the peak currents thereof increase. Accordingly, the increased peak current causes an electro-migration phenomenon, which thereby causes a short of the QUIET.sub.-- VSS line.

Burn-in stress control circuit for a semiconductor memory device


A structure of a rear portion of a vehicle furnished with a curtain airbag apparatus includes a rear pillar, a soft roof trim, a rear pillar trim harder than the roof trim, and a cover constituting part of the rear pillar trim and covering a specific area of a front face portion of the rear pillar trim. The curtain airbag apparatus includes a curtain airbag and an inflator for inflating and deploying the curtain airbag into the vehicle interior along side window glass. The cover of the rear pillar trim can easily be displaced frontward along an airbag deployment joint. When inflated, the curtain airbag fixed to a vehicle body along an upper edge and a rear edge of the side window glass in a retracted position deploys into the vehicle interior upon separating and displacing the cover of the rear pillar trim frontward from the other part thereof.

1. Field of the Invention
The present invention relates to a structure of a rear portion of a vehicle furnished with a curtain airbag apparatus.
2. Description of the Related Art
It is now common practice to furnish vehicles, in particular motor vehicles, with an airbag system to provide protection to vehicle occupants in the event of a collision or a rollover, for instance. A so-called "curtain airbag," a type of currently available airbags, is designed to inflate and deploy in the vehicle interior to cover side window glass panes. Among curtain airbags of different designs, one has a large length so as to be deployed longitudinally to cover a plurality of side window glass panes which are located separately along a longitudinal direction of a vehicle. For example, Japanese Unexamined Patent Publication No. 2004-189099 discloses this type of curtain airbag which has a considerably large longitudinal dimension to cover all three side window glass panes mounted on each side of a vehicle. When in a retracted state, the curtain airbag of this Publication is fixed to a vehicle body along upper marginal parts of the side window glass panes as well as to a rearmost pillar.
On the other hand, United States Patent Publication No. 2004/0150198 introduces a curtain airbag deployment technique in which a curtain airbag is deployed out from a rear pillar trim with an outside edge portion thereof deformed.
Further, Japanese Unexamined Patent Publication No. 2004-314655 shows a structure in which a trim made of a hard material is provided in the vicinity of an upper edge of side window glass. This Publication does not disclose an arrangement for deploying a curtain airbag from a rear pillar trim, however.
It is desirable that a curtain airbag deployed to cover side window glass from inside a vehicle's passenger compartment, especially in the event of a rollover, exhibit a sufficiently high resistance (or unimpaired tensile force) to withstand an external force which may be exerted on the curtain airbag from inside or outside the vehicle interior. For this reason, the curtain airbag should preferably be fixed to the vehicle body not only at an upper portion but also at a rear end portion which is a portion of the curtain airbag disposed along a rear end part of the side window glass.
A rear pillar is covered by a rear pillar trim to provide an improved appearance as seen from inside the passenger compartment, for instance. The rear pillar trim is generally made of material which is much harder than a soft roof trim covering an inner surface of a roof panel so that the rear pillar trim would not be damaged by cargo or other objects. In a case where the curtain airbag is designed to cover a side window glass pane located immediately in front of the rear pillar which is covered by the rear pillar trim, the portion of the curtain airbag disposed along the rear end part of the side window glass is covered by the rear pillar trim in a retracted state so that the same portion of the curtain airbag is seen from inside the passenger compartment. Since the curtain airbag thus designed is covered by the rear pillar trim from a front side in the retracted state, it is needed, when necessary, to deploy the curtain airbag while causing at least an upper part of a frontal portion of the rear pillar trim to deform frontward.
Since the rear pillar trim is made of a hard material as mentioned above, the rear pillar trim is not so easy to deform. Thus, under conditions where the curtain airbag in the retracted state is positioned considerably inward along a width direction of the vehicle, however, it is necessary to deform the rear pillar trim by an extremely large amount when deploying the curtain airbag. This makes it difficult to ensure smooth inflation and deployment of the curtain airbag, potentially causing a breakage of the upper part of the rear pillar trim.
One approach to securing good deployability of the curtain airbag would be to cause the curtain airbag to stretch out from between an outermost end part of the frontal portion of the rear pillar trim and the side window glass when activated. This will be achieved by storing the curtain airbag situated along the rear end part of the side window glass in the retracted state at a position greatly offset outward along the vehicle width (or at a position as close as possible to the side window glass), or by storing the curtain airbag in such a way that the curtain airbag being deployed is directed somewhat outward along the vehicle width. This approach however is likely to develop a problem that the rear pillar trim becomes susceptible to breakage because the curtain airbag being deployed produces a pushing force which exerts a great locally deforming effect on the outermost end part of the rear pillar trim.

Structure of rear portion of vehicle furnished with curtain airbag apparatus


A dispenser includes a chamber filled with fluid and cascading contents, such that when tape is dispensed, the chamber rotates, thereby causing the cascading contents to cascade through the fluid. Furthermore, the cascading chamber assembly includes a display portion and a clear chamber cover whereby indicia inscribed on the display portion are viewable through the chamber cover. Also, the dispenser may include a sound-producing mechanism for producing an entertaining sound or sounds when the chamber rotates.

1. Field of the Invention
This invention relates generally to dispensers for tape and other flat materials dispensed from rolls and, more specifically, to a Tape Dispenser Having a Liquid-Filled Display Portion.
2. Description of Related Art
Tape dispensers have been in existence for as long as adhesive tape rolls have existed. A common design includes a housing that is split in two parts (that snap together to form a single housing). Within the housing is held a roll of tape; the user merely needs to pull on the end of the tape strip until the desired length is obtained. The tape strip is then torn across a cutting member, thereby cutting the unrolled strip free from the roll.
Children commonly use tape for arts and crafts and other school assignments. To date, however, there has been no tape dispenser design that would be particularly attractive to children. While it is typical for tape dispensers to have custom-shaped or -colored housings, until now there has been no real innovation to the dispenser design. It would provide much enjoyment for children (and therefore increased utility) if there were a tape dispenser that provided entertainment through visual action and even sound emissions when the tape is dispensed.

Tape dispenser having a liquid-filled display portion


An electrical connector (100) for connecting a sheet-like connection member includes an insulating housing (1) provided with a plurality of conductive terminals (2, 3) and a pair of retaining members. The housing defines a pair of slots (15) each with an upper groove (153) and a lower groove (154) at a front portion thereof. The retaining members (4) are embedded in the slots (15), and each comprises an upper arm (441) retained in the upper groove (153), a lower arm (442) received in the lower groove (154) and a soldering portion (42) extending from a bottom edge thereof. The lower groove (154) runs though the housing in an insertion direction of the retaining members (4).

1. Field of the Invention
The present invention relates to an electrical connector, and more particular to an electrical connector for a sheet-like connection member such as a flexible printed circuit (FPC), a flexible flat cable and so forth. All of these cables and circuit hereafter will be generally referred to as "FPC" for simplification.
2. Description of Related Art
U.S. Pat. No. 6,921,274 discloses a conventional electrical connector adapted for connecting an FPC. The longitudinal insulating housing of the connector defines a pair of slot respectively at opposite ends thereof. The back portion of the slot is between the top and bottom of the housing, and the front of the slot is running though the top and bottom face of the housing. A pair of retaining member has a forward-extending retaining portion retained in the front portion of the slot and a solder portion extending from the bottom edge thereof and out of the housing. The solder portion can only extend from the bottom edge except the retaining portion.
When the electrical connector is mounted onto a printed circuit board (PCB), the connector is often appointed at a predetermined place on the PCB. However, the retaining member is often made in different shape or size due to different needs, sometimes the soldering portion of the retaining member could not be soldered on a predetermined place of the PCB because of the restriction of the slot, which is not advantage for meeting the diversity needs of the user. Therefore, an improved electrical connector is required to overcome the problem.


A technology for inhibiting the dielectric breakdown occurred in a semiconductor device is provided. A semiconductor device includes a semiconductor substrate (not shown), an interlayer insulating film 102 formed on the semiconductor substrate and a multiple-layered insulating film 140 provided on the interlayer insulating film 102. The semiconductor device also includes an electric conductor that extends through the multiplelayered insulating film 140 and includes a Cu film 120 and a barrier metal film 118. The barrier metal film 118 is covers side surfaces and a bottom surface of the Cu film 120. An insulating film 116 is disposed between the multiple-layered insulating film 140 and the electric conductor (i.e., Cu film 120 and barrier metal film 118).

1. Field of the Invention
The present invention relates to a semiconductor device and a manufacturing method thereof.
2. Related Art
Conventional semiconductor devices includes, for example, semiconductor devices described in Japanese Patent Laid-Open No. 2001-102,449. Cross-sectional views of the semiconductor devices described in Japanese Patent Laid-Open No. 2001-102,449 are shown in FIGS. 12A and 12B. As show in FIG. 12A, concerning a base layer 201 employed for manufacturing such semiconductor device, an electrode 400 is formed on the surface of the base layer 201, and a periphery of the electrode 400 is covered with an insulating layer 401, and is planarized.
Then, as shown in FIG. 12B, an Si3N4 layer 202, an organic spin-on-glass (SOG) film 203, an Si3N4 layer 204, an organic SOG film 207 and an Si3N4 layer 208 are sequentially deposited on the base layer 201, and trenches and holes are integrally formed via a dual damascene etch process. Then, Cu is embedded within these trenches and holes as an electric conductor layer 402 to form an interconnect circuit, thereby presenting the semiconductor device.
However, there are interfaces between the organic SOG film 203 and 207 that are low dielectric constant insulating films and the etch stop film that is an underlying layer film or Si3N4 layers 202, 204 and 208 that function as hard mask films of the upper layer films in the conventional technology described in Japanese Patent Laid-Open No. 2001-102,449, and the interfaces contact with the electric conductor layer 402.
In this structure, when time dependence dielectric breakdown (TDDB) is conducted between interconnects in the case that the interval between interconnects that are composed of portions of the electric conductor layer 402 (i.e., interval between the electric conductor layers 402) is narrow, a dielectric breakdown is occurred through these interfaces, so that a short-circuit between the interconnects composed of portions of the electric conductor layer 402 is occurred. This phenomenon becomes to be noticeable, as the dielectric constants of the organic SOG films 203 and 207, which are low dielectric constant insulating films, are reduced.

Semiconductor device and method for manufacturing same


Methods and systems are provided for adjusting the opening of a scroll valve of a binary flow turbine. Scroll valve adjustments are used at different engine operating conditions to improve engine performance and boost response. Scroll valve adjustments are coordinated with wastegate and EGR valve adjustments for improved engine control.

Engine out cold-start emissions generated before light-off of an exhaust system catalytic converter may contribute a large percentage of the total exhaust emissions. Various approaches may be used by engine control systems to expedite the attainment of the catalyst light-off temperature. For example, various combinations of valve overlap and increased fuel injection may be used to expedite catalyst warming. In addition, at low engine speeds following the cold-start, boost performance may be degraded due to turbo lag. In boosted engine systems including a twin-scroll turbocharger, such as the system of Styles et al. in US 2011/0302917, flow through the different scrolls of the turbocharger is separated to reduce turbo lag at low engine speeds.
However, the inventors herein have recognized potential issues with such an approach. Specifically, there may be selected engine operating conditions where separating flow through the scrolls of a twin-scroll turbocharger can increase turbine speed to a range that excites audible resonance at the turbocharger. This results in a condition known as turbo whine. The audible resonance may be objectionable to the vehicle driver and/or passengers. The turbine speed at which the resonance occurs may vary based on operating conditions such as engine speed, temperature, etc., the turbo whine may be exacerbated during low engine speed conditions, for example during engine start. This is due to the overall engine system noise not being sufficient to mask the audible resonance.
In one example, turbo whine may be at least partly addressed by a boosted engine system that uses a binary flow turbine. For example, turbo whine may be addressed by a method comprising: during selected engine start (e.g., engine start speed conditions) conditions, operating the engine with a scroll valve coupled to an outer scroll of a multi-scroll exhaust turbine open. Specifically for a start event, by opening the scroll valve during at least an early part of selected engine starts, turbine speed can be reduced, moving the turbocharger out of the resonance condition. During other starts, where no whine occurs, the engine may be started with the scroll valve closed for a number of combustion events.
In one example, during selected engine starts, such as where the turbine speed is within a threshold range, an engine may be started with a scroll valve coupled to an outer scroll of a multi-scroll exhaust turbine at a more open position, such as at a fully open position. The scroll valve may be maintained open for a number of combustion events during the engine start. By initially opening the scroll valve, exhaust manifold pressure upstream of the turbine is reduced, reducing turbine speed. This may move the turbine out of a speed range where resonance occurs, thereby reducing the objectionable noise. Then, after the number of combustion events, the scroll valve may be moved to a closed position to expedite turbine spool-up and catalyst warming. By subsequently closing the scroll valve, exhaust flowing to the turbine inlet is flowed at a higher pressure, expediting turbine spin-up and resulting turbine power. In addition, turbine surface area is reduced, increasing heat flux to the exhaust catalyst, and expediting catalyst light-off during the cold-start. It will be appreciated that wastegate and EGR valve adjustments may be coordinated with the scroll valve adjustment to further improve boost control during the engine start.
In this way, by opening the scroll valve during an early part of an engine start, turbine speed can be kept out of a range where turbo whine is likely. Then, by closing the scroll valve during a later part of the engine start, turbine spin-up and catalyst light-off is expedited. By reducing turbo whine, the vehicle operator's drive experience is improved. By expediting catalyst light-off, cold-start emissions are reduced. In addition, by expediting turbine spin-up, turbo lag at low engine speeds is reduced, and boosted engine performance is improved. Overall, engine performance and exhaust emissions are improved.
It should be understood that the summary above is provided to introduce in simplified form a selection of concepts that are further described in the detailed description. It is not meant to identify key or essential features of the claimed subject matter, the scope of which is defined uniquely by the claims that follow the detailed description. Furthermore, the claimed subject matter is not limited to implementations that solve any disadvantages noted above or in any part of this disclosure.

This patent is subject to a terminal disclaimer.

Method and system for binary flow turbine control


A coating that resists wear; first, at least one DLC layer with a high degree of hardness is applied to a component and then a gradient layer, whose density decreases in the direction toward the surface, is applied to this DLC layer. By means of the hardness progression that this produces in the gradient layer, the gradient layer functions as a run-in layer in applications with sliding surfaces.

In components with sliding surfaces, there is a large need for hard surfaces that have a run-in layer as their outer layer so that the sliding counterpart element is initially able to at least partially wear away the run-in layer and thus produce an adaptation to its own geometry.
It is known to use DLC layers as sliding layers and to cover them with a softer layer so that this softer layer functions as a run-in layer. In this connection, however, it is disadvantageous that it is necessary to change over to another layer material. This places higher demands on the coating system and the coating procedure that is to be carried out.
The object of the present invention, therefore, is to disclose a hard surface coating with a soft run-in layer, where the layer materials of the hard coating and of the soft run-in layer are essentially the same with regard to their chemical elements and concentration.

OERLIKON SURFACE SOLUTIONS AG, PFÄFFIKON


A system including a forecasting module, a decoder module, and an error detecting module. The forecasting module is configured to forecast a number of erasures in an input signal, where the erasures include information about errors in the input signal due to a burst error. The decoder module is configured to decode codewords received in the input signal based on the erasures in response to the number of the erasures being less than or equal to a predetermined threshold. The decoder module is configured to not decode the codewords based on the erasures in response to the number of the erasures being greater than the predetermined threshold. The error detecting module is configured to (i) detect the burst error and (ii) decode the codewords in response to the decoder module not decoding the codewords due to the number of the erasures being greater than the predetermined threshold.

Mass-storage devices such as disk drives, compact disks, DVD's, etc., tend to develop media defects over time, which cause data errors. Communication systems such as wireless networks, satellite broadcast systems, xDSL modems, etc., experience data errors caused by noise, interference, etc. Numerous error-correcting techniques such as Reed-Solomon (RS) coding are used to correct such errors.
Referring now to FIG. 1A, a RS code-based error-correcting system 10 includes a RS encoder 12 that receives a block of digital data from a data source such as a communication system (not shown). The RS encoder 12 adds redundant check-bytes to the block of digital data. The combined data is transmitted via a communication channel 14 such as a transmission line or a wireless link. The data may also be stored in a mass-storage device 15 such as a disk drive. Errors may occur during transmission or storage of the data due to noise, interference, media defects, etc. A RS decoder 16 decodes each block of data and attempts to correct errors and recover the original data. The number and type of errors that can be corrected depend on the characteristics of the RS code.
In an error-correcting scheme that uses RS codes, a polynomial is constructed using data symbols (e.g., data bytes) that are to be transmitted. An over-sampled plot of the polynomial is transmitted instead of transmitting the data symbols. Because the transmitted data is over-sampled with redundant information, the polynomial and the data symbols can be substantially reconstructed when received despite transmission errors.
Typically, the scheme encodes the data in a data block as points of a polynomial plotted over a finite field. The coefficients of the polynomial are the data symbols of the data block. The plot over-determines the coefficients, which can be recovered from subsets of the plotted points. Just as a curve can be corrected by interpolating past a gap, a RS code can bridge a series of errors in the data block to recover the coefficients of the polynomial.
Specifically, if the system 10 uses a RS(N,K) code, the RS encoder 12 receives a block of data comprising K message bytes. The RS encoder 12 adds R redundant bytes to the data to generate an N-byte codeword, where R=N−K. The error-correcting ability of the RS(N,K) code is a function of the redundancy R. For example, the RS decoder 16 using the RS(N,K) code can correct up to R/2 bytes that may contain errors. That is, the RS code can correct half as many erroneous bytes as the number of redundant bytes that are added to the data block.
Errors in systems such as mass-storage devices, communication systems, etc., generally occur in the form of Additive White Gaussian Noise (AWGN) and in bursts. The RS code is frequently used to correct errors in these systems. When errors occur in bursts and the number of errors in a codeword exceeds R/2, the RS decoder 16 may fail to correct the errors. Some systems use an interleaver and a de-interleaver between the RS encoder 12 and the RS decoder 16 to improve error-correction capability of the RS decoder 16.
Referring now to FIG. 1B, an interleaver 13 with an interleave depth D spreads a block of N consecutive bytes of a RS codeword evenly into D*N bytes before transmission. A de-interleaver 17 de-spreads the D*N bytes back into the N consecutive bytes of the block. If the communications channel 14 encounters a burst error of B bytes, the de-interleaver 17 de-spreads the B bytes of the burst error evenly into shorter bursts each of length B/D. Thus, each RS codeword encounters only B/D bytes of errors. That is, the interleaver 13 of depth D effectively cuts the longer burst into shorter bursts by a factor of D. If B/D is less than R/2, the RS decoder 16 can correct all the burst errors. If B/D is larger than R/2, however, the RS decoder 16 can not correct the burst errors.
One way to solve this problem is to increase the interleaver depth D. For example, D can be increased up to 4096 in some modern systems such as VDSL2. The cost of hardware, however, to implement such an interleaver may be very high. Additionally, the hardware that implements such an interleaver may significantly increase latency delay, which may degrade system performance.
Referring now to FIGS. 2-3, some exemplary implementations of the decoding and error-correcting scheme that uses the interleaver and de-interleaver are shown. Referring now to FIG. 2, a mass-storage device 20 such as a disk drive communicates with a host adapter 22. The host adapter 22 transmits data that is to be stored in the storage device 20. An encoder 24 in the storage device 20 uses a coding scheme such as RS coding to encode the data. An interleaver 25 interleaves RS codewords. A read/write preamplifier 26 amplifies the encoded and interleaved data. A read/write element (not shown) writes the amplified data on a recording medium 28 of the storage device 20.
To retrieve the data stored in the storage device 20, the host adapter 22 sends a read request to the storage device 20. The read/write element reads the data from the recording medium 28. The read/write preamplifier 26 amplifies the data. A de-interleaver 29 de-spreads the data back into consecutive RS codewords. A decoding and error correcting module 30 decodes the data and corrects any errors in the data. The storage device 20 transmits the data to the host adapter 22.
In recent years, data-density, spin rates, and throughput rates of mass-storage devices have been steadily increasing. Accordingly, designing the devices with fast and accurate interleaving, decoding, and error-correcting schemes is becoming increasingly important to ensure data reliability.
Referring now to FIG. 3, a high-speed, high-bandwidth communication system 50 utilizes a Very high bit-rate Digital Subscriber Line (VDSL) or VDSL2 to transport data. The system 50 comprises a VDSL/VDSL2 host computer 52, a VDSL/VDSL2 transceiver 54, and multiple subscribers 56-1, . . . , 56-N (collectively 56).
The VDSL/VDSL2 transceiver 54 utilizes a discrete multi-tone (DMT) carrier system to transport data between the VDSL/VDSL2 host computer 52 and the subscribers 56. A DMT module 58 controls the DMT carrier system. An encoder 60 encodes data from the VDSL/VDSL2 host computer 52. An interleaver 59 interleaves RS codewords into dispersed version before the data is transmitted to the subscribers 56. A de-interleaver 61 de-spreads the data received from the subscribers 56 back into consecutive RS codewords. A decoding and error-correcting module 62 decodes data received from de-interleaver 61 and corrects any errors in the received data. The decoded data is forwarded to the VDSL/VDSL2 host computer 52.
The DMT module 58 divides a very wide spectrum of signal received from a subscriber 56 into many separate 4 KHz sub-channels. For example, an ADSL system can divide a spectrum of 1 MHz spectrum into 256 sub-channels each of 4-KHz. Some of the 256 channels may transport data in one direction while others may transport data in the reverse direction (i.e., upstream and downstream) between the VDSL/VDSL2 transceiver 54 and the subscribers 56. Additionally, the DMT module 58 monitors each channel and searches for the best channels to transmit and receive data. If quality of one channel is impaired due to high error rates, the DMT module 58 shifts a signal to another channel.
For VDSL/VDSL2 to function effectively and deliver designed performance, the DMT carrier system requires that the data received from multiple channels be decoded and reconstructed speedily and accurately. To achieve this goal using traditional interleaving, decoding, and error-correcting techniques, extensive hardware may be required. Using extensive hardware can increase system cost and system latency delay. VDSL2, which transports data at speeds of up to 100 Mbps upstream and 100 Mbps downstream, demands even higher decoding and error-correcting capabilities than VDSL.

Erasure forecasting and error-correction strategies


A system and method of assisting a radio in finding a network is presented. A method first detects existing nodes. A message is received on a slow communication link in a slow network from a new node. One or more existing nodes are found that may connect to new node with a fast communication link in a fast network. The fast network has a data rate that is faster than the slow network. A message is transmitted over the slow network to the new node to provide the new node possible existing nodes that are near it that it may connect to. Based on that message the new node establishes a fast communications link on the fast network between the new node and an existing node. The fast communications link can be a directional link.

1. Field of Invention
The current invention relates generally to apparatus, systems and methods for computer networking. More particularly, the apparatus, systems and methods relate to connecting a mobile device to a computer network. Specifically, the apparatus, systems and methods provide for assisting a mobile device to quickly find a node to communicate within a network.
2. Description of Related Art
Many discovery techniques exist to find a node within a radio network. A common approach is to use an omni radio link. However to cover the maximum range (distance) with bursty discovery packets it is necessary to allocate substantial size weight and power (SWAP). A radio considered for such a purpose is Link 16. By contrast an Iridium SBD radio consumes a fraction of the SWAP of a discovery radio such as Link 16. An alternate set of discovery techniques utilize the directional links themselves for discovery. But for narrow beam systems, a very large number of tiles must be searched repeatedly on a regular basis, even if no one is there to link with. This results in substantial resources being wasted on the directional link. A need, therefore, exists for improved discovery and acquisition methods for use in directional networking.

Discovery and acquisition methods for directional networking

BAE Systems Information and Electronic Systems Integration Inc.


In a coin sorting device which rolls a coin along a sorting passage and which carries out a sorting operation for the coin during movement of the coin, it is readily possible to remove unnecessary material from the sorting passage. The unnecessary material may be surface material which is separated from the coin. If the unnecessary material is left in the sorting passage, it becomes one of factors which cause an error in the sorting operation. Inasmuch as the unnecessary material can be readily removed from the sorting passage, reliability is improved as regards the sorting operation. For removing the unnecessary material, a plurality of through holes may be made to a bottom of the sorting passage. A roller member may be used at the bottom of the sorting passage instead of making the through holes.

This invention relates to a coin sorting device for use in an automatic vending machine, a coin operated gaming machine, or the like.
Various coin sorting devices of the type are already known. For example, a coin sorting device is disclosed in Japanese patent application laid-open publication No. 58489/1991. The coin sorting device includes a sorting passage defined between a stationary side plate and a movable side plate which is openably connected to and spaced to the stationary side plate. The sorting passage is supplied with a normal coin or a token coin. The normal coin, the token coin, and the like will collectively be called hereinunder a coin. The coin has a coin diameter.
In the manner known in the art, the coin sorting device carries out a sorting operation for the coin with reference the coin diameter and others. The sorting operation is, for example, separating various coins into an acceptable and a nonacceptable coin. In this event, the coin is moved along the sorting passage with rotation thereof.
It is assumed that the coin is soiled with dust, oil, and others which are attached on a surface thereof and which will be called surface material. The surface material has a part which is separated from the coin during movement of the coin along the sorting passage and is left as unnecessary material in the sorting passage. The unnecessary material becomes one of factors which cause an error in the sorting operation.
Therefore, it is necessary to often carry out a cleaning operation of the sorting passage. It is, however, difficult and necessary much time to carry out the cleaning operation. This is because the sorting passage is very narrow.

Coin sorting device in which unnecessary material can be readily removed from a sorting passage


Disclosed is a high voltage generator comprising: a first voltage level detector for detecting a voltage level of the high voltage; a second voltage level detector for detecting difference between the high voltage and a power supply voltage; a high voltage pump for performing a pumping operation to generate a high voltage when one of output signals of the first voltage level detector and the second voltage level detector is enabled; and a controller for receiving the output signal of the second voltage level detector, and for connecting a terminal through which the high voltage is output with the power supply voltage when the high voltage is lower than the power supply voltage.

1. Field of the Invention
The present invention relates to a high voltage generator, and more particularly to a high voltage generator for a semiconductor device which detects a falling of a high voltage level of the device below a voltage level of a power source and then enables the fallen high voltage level to recover to the voltage level of a power source.
2. Description of the Prior Art
FIG. 1A is a block diagram illustrating a conventional high voltage generator.
As shown in FIG. 1A, the high voltage generator includes a high voltage level detector 101, a high voltage pump 102 and an NMOS transistor 10.
The high voltage level detector 101 compares a high voltage VPP with a reference voltage VREFC and judges whether or not the high voltage VPP has a higher level than that of the reference voltage VREFC. When the high voltage VPP has a lower level than that of the reference voltage VREFC, the high voltage level detector 101 outputs an output signal PPE of a high level, thereby enabling the high voltage pump 102.
As generally known in the art, the high voltage pump 102 includes a ring oscillator and a pumping circuit. A detailed circuit of the high voltage pump 102 is well known to those skilled in the art, so detailed description thereof will be omitted.
An output terminal of the high voltage pump 102 is connected to the source of the transistor 10, and both of the drain and the gate of the transistor 10 are connected to the power supply voltage VDD.
FIG. 1B is a circuit illustrating a conventional high voltage detector 101.
In FIG. 1B, a voltage level of a reference voltage VREFC is decided as follow:{R2/(R1+R2)}*VPP−target=VREFC
Herein, the 'VPP−target' represents the target value of the high voltage desired by a user.
Therefore, when the voltage level of the high voltage has a lower value than the target value of the high voltage, the output signal PPE of the high voltage level detector becomes a high level, thereby operating the high voltage pump.
FIG. 2 is a graph for exampling relation among the power supply voltage VDD, the high voltage VPP and the reference voltage VREFC shown in FIGS. 1A and 1B.
In FIG. 2, region '(1)' represents a state just after the power supply voltage is applied, region '(2)' represents a normal operation region in which the power supply voltage VDD exceeds a predetermined level, and region '(3)' represents a region in which the power supply voltage is very high, in which region '(3)' is typically employed when a burn-in test is performed.
As shown in regions '(1)' and '(3)' in FIG. 2, there are sections in which the high voltage VPP output from the conventional high voltage generator is lower than the power supply voltage VDD due to the transistor 10 shown in FIG. 1A. That is, there is no problem when the high voltage VPP is higher than the power supply voltage VDD. However, when the high voltage VPP is lower than the power supply voltage VDD, the voltage of the source (i.e., an output terminal of the high voltage pump) of the transistor becomes 'VDD-Vth' (herein, 'Vth' is a threshold voltage) due to the effects of the transistor 10 having the diode property, thereby causing a problem.
In this case, that is, when the high voltage VPP is lower than the power supply voltage VDD, a latch-up phenomenon happens in a PMOS transistor which is located in a memory cell array region of a memory device using the high voltage VPP as a bulk voltage.


A cryptographic method, comprising receiving a public key belonging to a message recipient having a private key corresponding to the public key, selecting a numerical seed, having a first entropy, using the numerical seed and the public key, generating key recovery information having a second entropy, which is less than the first entropy, and generating a message key having a third entropy, which is less than the first entropy, encrypting a message using the message key, and transmitting the encrypted message and the key recovery information to the message recipient, whereby the recipient reconstructs the message key using the key recovery information and the private key and decrypts the encrypted message using the reconstructed message key. Related systems and methods are also included.

Public-key cryptographic techniques are widely used for encryption and authentication of electronic documents. Such techniques use a mathematically-related key pair: a secret private key and a freely-distributed public key. A sender encrypts a message using the recipient's public key. The recipient then decrypts the message using the corresponding private key. In a well-designed scheme, it is computationally infeasible to reconstruct the private key from the public key or to otherwise decrypt the message without having possession of the private key.
Commonly-used public-key cryptographic techniques, such as the Rivest Shamir Adleman (RSA) algorithm, rely on numerical computations over large finite fields. To ensure security against cryptanalysis, these techniques require the use of large keys and complex computations, which are costly, in terms of memory and computing power, to store and compute. These demands can be problematic in application environments such as smart cards, in which computing resources are limited.
Various alternative public-key signature schemes have been developed in order to reduce the resource burden associated with cryptographic operations. Some schemes of this sort are based on the Merkle-Hellman knapsack cryptosystem, which was first described by Merkle and Hellman in "Hiding Information and Signatures in Trapdoor Knapsacks," IEEE Transactions on Information Theory 24:5, pages 525-530 (1978). Unfortunately, knapsack-based schemes, including those based on more secure iterated-knapsack approaches that were developed subsequently, have been found to be vulnerable to attacks based on lattice reduction and the Diophantine approximation. Such vulnerabilities are reviewed, for example, by Brickell in "Breaking Iterated Knapsacks," Advances in Cryptology—Crypto '84, pages 342-358 (Springer-Verlag, 1985).

Public key cryptography with reduced computational load


A composition containing (i) an anti-microbial agent that comprises a polymeric biguanide, either alone or in combination with at least one other microbiologically active component and (ii) a basic co-polymer of the Formula (1):[A]m-[B]n-[D]yq.  Formula (1)

1. Field of the Invention
The present invention relates to a method for inhibiting the growth of micro-organisms on surfaces by means of a composition comprising a basic vinyl comb type co-polymer and an anti-microbial agent. The antimicrobial agent is controllably released from the basic co-polymer over time thereby providing effective anti-microbial control.
Micro-organisms can be found on many inanimate and animate surfaces. The presence of such micro-organisms can result in unhygienic conditions in hospitals and medical environments, kitchens, bathrooms, toilets and in the preparation and packaging of foodstuffs leading to health risks and contamination.
Several anti-microbial agents exist which are effective against many of the virulent forms of micro-organisms found in the food and health-care environments. Unfortunately, the activity of such agents is insufficient in terms of providing a sustained, surface hygienic effect. This may be due to the high water solubility and/or lack of substantivity of the anti-microbial agent on a surface which means that the anti-microbial agent is readily displaced. There is therefore a requirement for an anti-microbial agent or an anti-microbial agent in combination with a delivery system which provides a high degree of anti-microbial kill over a sustained period of time.
2. Brief Description of Art
The literature describes various cases were micro-organisms and in particular bacterial fouling may cause damage or lead to contamination of surfaces including for example swimming pools, industrial pipes, architectural structures, ships hulls, hospital theatres, teeth and kitchen surfaces. Indeed, there have been many attempts and approaches to overcome the micro-biological problems associated especially with bacterial growth on inanimate and animate surfaces.
European Patent 0182523 describes how certain polymeric compositions are effective at preventing oral bacteria from colonisation on the surface of teeth. In UK Patent 2213721, an anti-staining composition comprising polymers with anti-bacterial agents were shown to be effective against bacteria found in an oral environment.
In European Patent 0232006, coating compositions comprising sulphonated polymers and a microbicide for use in marine environments were shown to have hydrolytic instability. In the above cases, the coating of polymer in an aqueous environment with or without microbicide was substantially erodable, thereby acting by means of a self-polishing effect, thereby reducing the ability of bacteria to colonise on the surface to be protected.
WO/02449 describes a process for the biocidal treatment of surfaces comprising high molecular weight grafted co-polymers.
However, none of the above documents describe an anti-microbial system which has the ability to eliminate micro-organisms effectively and has a sustained, surface hygienic effect.
The term 'sustained' used hereinafter refers to an anti-microbial agent which is still active even after the surface to which the agent has been applied has been cleansed for example by wiping, rinsing or washing the surface.