A microprocessor processes conditional non-branch instructions that specify a condition and instruct the microprocessor to perform an operation if the condition is satisfied and otherwise to not perform the operation. A predictor provides a prediction about a conditional non-branch instruction. An instruction translator translates the conditional non-branch instruction into a no-operation microinstruction when the prediction predicts the condition will not be satisfied, and into a set of one or more microinstructions to unconditionally perform the operation when the prediction predicts the condition will be satisfied. An execution pipeline executes the no-operation microinstruction or the set of microinstructions. The predictor translates into a second set of one or more microinstructions to conditionally perform the operation when the prediction does not make a prediction. In the case of a misprediction, the translator re-translates the conditional non-branch instruction into the second set of microinstructions.

The x86 processor architecture, originally developed by Intel Corporation of Santa Clara, Calif., and the Advanced RISC Machines (ARM) architecture, originally developed by ARM Ltd. of Cambridge, UK, are well known in the art of computing. Many computing systems exist that include an ARM or x86 processor, and the demand for them appears to be increasing rapidly. Presently, the demand for ARM architecture processing cores appears to dominate low power, low cost segments of the computing market, such as cell phones, PDA's, tablet PCs, network routers and hubs, and set-top boxes (for example, the main processing power of the Apple iPhone and iPad is supplied by an ARM architecture processor core), while the demand for x86 architecture processors appears to dominate market segments that require higher performance that justifies higher cost, such as in laptops, desktops and servers. However, as the performance of ARM cores increases and the power consumption and cost of certain models of x86 processors decreases, the line between the different markets is evidently fading, and the two architectures are beginning to compete head-to-head, for example in mobile computing markets such as smart cellular phones, and it is likely they will begin to compete more frequently in the laptop, desktop and server markets.
This situation may leave computing device manufacturers and consumers in a dilemma over which of the two architectures will predominate and, more specifically, for which of the two architectures software developers will develop more software. For example, some entities purchase very large amounts of computing systems each month or year. These entities are highly motivated to buy systems that are the same configuration due to the cost efficiencies associated with purchasing large quantities of the same system and the simplification of system maintenance and repair, for example. However, the user population of these large entities may have diverse computing needs for these single configuration systems. More specifically, some of the users have computing needs in which they want to run software on an ARM architecture processor, and some have computing needs in which they want to run software on an x86 architecture processor, and some may even want to run software on both. Still further, new previously-unanticipated computing needs may emerge that demand one architecture or the other. In these situations, a portion of the extremely large investment made by these large entities may have been wasted. For another example, a given user may have a crucial application that only runs on the x86 architecture so he purchases an x86 architecture system, but a version of the application is subsequently developed for the ARM architecture that is superior to the x86 version (or vice versa) and therefore the user would like to switch. Unfortunately, he has already made the investment in the architecture that he does not prefer. Still further, a given user may have invested in applications that only run on the ARM architecture, but the user would also like to take advantage of fact that applications in other areas have been developed for the x86 architecture that do not exist for the ARM architecture or that are superior to comparable software developed for the ARM architecture, or vice versa. It should be noted that although the investment made by a small entity or an individual user may not be as great as by the large entity in terms of magnitude, nevertheless in relative terms the investment wasted may be even larger. Many other similar examples of wasted investment may exist or arise in the context of a switch in dominance from the x86 architecture to the ARM architecture, or vice versa, in various computing device markets. Finally, computing device manufacturers, such as OEMs, invest large amounts of resources into developing new products. They are caught in the dilemma also and may waste some of their valuable development resources if they develop and manufacture mass quantities of a system around the x86 or ARM architecture and then the user demand changes relatively suddenly.
It would be beneficial for manufacturers and consumers of computing devices to be able to preserve their investment regardless of which of the two architectures prevails. Therefore, what is needed is a solution that would allow system manufacturers to develop computing devices that enable users to run both x86 architecture and ARM architecture programs.
The desire to have a system that is capable of running programs of more than one instruction set has long existed, primarily because customers may make a significant investment in software that runs on old hardware whose instruction set is different from that of the new hardware. For example, the IBM System/360 Model 30 included an IBM System 1401 compatibility feature to ease the pain of conversion to the higher performance and feature-enhanced System/360. The Model 30 included both a System/360 and a 1401 Read Only Storage (ROS) Control, which gave it the capability of being used in 1401 mode if the Auxiliary Storage was loaded with needed information beforehand. Furthermore, where the software was developed in a high-level language, the new hardware developer may have little or no control over the software compiled for the old hardware, and the software developer may not have a motivation to re-compile the source code for the new hardware, particularly if the software developer and the hardware developer are not the same entity. Silberman and Ebcioglu proposed techniques for improving performance of existing ("base") CISC architecture (e.g., IBM S/390) software by running it on RISC, superscalar, and Very Long Instruction Word (VLIW) architecture ("native") systems by including a native engine that executes native code and a migrant engine that executes base object code, with the ability to switch between the code types as necessary depending upon the effectiveness of translation software that translates the base object code into native code. See "An Architectural Framework for Supporting Heterogeneous Instruction-Set Architectures," Siberman and Ebcioglu, Computer, June 1993, No. 6. Van Dyke et al. disclosed a processor having an execution pipeline that executes native RISC (Tapestry) program instructions and which also translates x86 program instructions into the native RISC instructions through a combination of hardware translation and software translation, in U.S. Pat. No. 7,047,394, issued May 16, 2006. Nakada et al. proposed a heterogeneous SMT processor with an Advanced RISC Machines (ARM) architecture front-end pipeline for irregular (e.g., OS) programs and a Fujitsu FR-V (VLIW) architecture front-end pipeline for multimedia applications that feed an FR-V VLIW back-end pipeline with an added VLIW queue to hold instructions from the front-end pipelines. See "OROCHI: A Multiple Instruction Set SMT Processor," Proceedings of the First International Workshop on New Frontiers in High-performance and Hardware-aware Computing (HipHaC'08), Lake Como, Italy, November 2008 (In conjunction with MICRO-41), Buchty and Weib, eds, Universitatsverlag Karlsruhe, ISBN 978-3-86644-298-6. This approach was proposed in order to reduce the total system footprint over heterogeneous System on Chip (SOC) devices, such as the Texas Instruments OMAP that includes an ARM processor core plus one or more co-processors (such as the TMS320, various digital signal processors, or various GPUs) that do not share instruction execution resources but are instead essentially distinct processing cores integrated onto a single chip.
Software translators, also referred to as software emulators, software simulators, dynamic binary translators and the like, have also been employed to support the ability to run programs of one architecture on a processor of a different architecture. A popular commercial example is the Motorola 68K-to-PowerPC emulator that accompanied Apple Macintosh computers to permit 68K programs to run on a Macintosh with a PowerPC processor, and a PowerPC-to-x86 emulator was later developed to permit PowerPC programs to run on a Macintosh with an x86 processor. Transmeta Corporation of Santa Clara, Calif., coupled VLIW core hardware and "a pure software-based instruction translator [referred to as "Code Morphing Software"] [that] dynamically compiles or emulates x86 code sequences" to execute x86 code. "Transmeta." Wikipedia. 2011. Wikimedia Foundation, Inc. <http://en.wikipedia.org/wiki/Transmeta>. See also, for example, U.S. Pat. No. 5,832,205, issued Nov. 3, 1998 to Kelly et al. The IBM DAISY (Dynamically Architected Instruction Set from Yorktown) system includes a VLIW machine and dynamic binary software translation to provide 100% software compatible emulation of old architectures. DAISY includes a Virtual Machine Monitor residing in ROM that parallelizes and saves the VLIW primitives to a portion of main memory not visible to the old architecture in hopes of avoiding re-translation on subsequent instances of the same old architecture code fragments. DAISY includes fast compiler optimization algorithms to increase performance. QEMU is a machine emulator that includes a software dynamic translator. QEMU emulates a number of CPUs (e.g., x86, PowerPC, ARM and SPARC) on various hosts (e.g., x86, PowerPC, ARM, SPARC, Alpha and MIPS). As stated by its originator, the "dynamic translator performs a runtime conversion of the target CPU instructions into the host instruction set. The resulting binary code is stored in a translation cache so that it can be reused . . . . QEMU is much simpler [than other dynamic translators] because it just concatenates pieces of machine code generated off line by the GNU C Compiler." QEMU, a Fast and Portable Dynamic Translator, Fabrice Bellard, USENIX Association, FREENIX Track: 2005 USENIX Annual Technical Conference. See also, "ARM Instruction Set Simulation on Multi-Core x86 Hardware," Lee Wang Hao, thesis, University of Adelaide, Jun. 19, 2009. However, while software translator-based solutions may provide sufficient performance for a subset of computing needs, they are unlikely to provide the performance required by many users.
Static binary translation is another technique that has the potential for high performance. However, there are technical considerations (e.g., self-modifying code, indirect branches whose value is known only at run-time) and commercial/legal barriers (e.g., may require the hardware developer to develop channels for distribution of the new programs; potential license or copyright violations with the original program distributors) associated with static binary translation.
One feature of the ARM ISA is conditional instruction execution. As the ARM Architecture Reference Manual states at page A4-3:                Most ARM instructions can be conditionally executed. This means that they only have their normal effect on the programmer's model operation, memory and coprocessors if the N, Z, C and V flags in the APSR satisfy a condition specified in the instruction. If the flags do not satisfy the condition, the instruction acts as a NOP, that is, execution advances to the next instruction as normal, including any relevant checks for exceptions being taken, but has no other effect.
Benefits of the conditional execution feature are that it potentially facilitates smaller code size and may improve performance by reducing the number of branch instructions and concomitantly the performance penalties associated with mispredicting them. Therefore, what is needed is a way to efficiently perform conditional instructions, particularly in a fashion that supports high microprocessor clock rates.

Conditional non-branch instruction prediction


A compact and lightweight image blur suppression device is shown and described that is superior in responsiveness and quietness, and has a reduced number of parts. In general, a lens frame with an image blur optical system is shifted in a direction opposite to the direction of vibration by a vibration motor. The image blur suppression device is for suppressing image blur in an image formed by a main optical system having an optical axis. The image blur suppression device has an image blur suppression optical system arranged to move within a plane substantially orthogonal to an optical axis of the main optical system and a vibration motor for providing a drive source to move the image blur suppression optical system so as to compensate for image blur.

1. Field of the Invention
The present invention relates to an image blur suppression device for a camera or other optical devices, suppress to image blur caused, for example, by shaking the camera, and in particular to a vibration motor for use in driving an optical system of an image blur suppression device.
2. Description of the Related Art
Image blur suppression devices have as their object, suppression of, or reduction of, blurring in an image projected onto an image plane. A motion compensation device is a type of image blur suppression device which compensates for motion incident upon an optical system which projects the image onto the image plane. Motion is typically imparted to the optical system by way of vibrations in the optical system, or in the surrounding holding member. In general, known motion compensation devices cause a compensation lens to shift counter to the motion of the optical system so as to shift the image projected by the optical system relative to the optical system.
In recent years, progress has been made in the automation of cameras, for example, automatic exposure, automatic film winding, automatic speed lights, as well as automatic focus. As a result, photographs are easier to produce. However, the high magnification of zoom compact cameras, and in particular long focal point distance photography, increases the effect of image blur caused by camera shake.
Japanese Patent Publication Number Hei 3-110530, and Japanese Patent Publication Number Hei 5-95204, propose image blur suppression devices which attempt to prevent image blur by correcting camera shake during photography.
FIG. 33 is a perspective diagram of an example of a camera with a known blur image blur suppression device. An image blur suppression optical system 9 for a camera 1 generally comprises: angular velocity sensors 2 and 3 to detect motion in a horizontal direction (left and right movements of the camera in the yawing direction and X direction) and a vertical direction (up and down movements of the camera in the pitching direction and Y direction) in a plane orthogonal to an optical axis Z of the camera 1; two transmission gear arrays 5 and 6 which drive a lens frame 4, supporting a lens, in the X direction and Y direction respectively; and electro-magnetic motors 7 and 8 connected to transmission gear arrays 5 and 6, respectively. The lens frame 4 is shifted in the direction opposite to the direction of motion by activating electro-magnetic motors 7 and 8 based on the motion information obtained from the outputs of angular velocity sensors 2 and 3. In general, camera shake is compensated during photography and image blur is prevented by canceling the movement of the image by shifting the lens frame in a direction opposite to the direction of movement.
Because conventional image blur suppression devices use high speed rotation, low torque electro-magnetic motors 7 and 8 as the drive source, torque is increased by connecting the electro-magnetic motors 7 and 8 to gear arrays 5 and 6, which are speed reduction mechanisms. However, this increases the weight and size of the camera. Also, the gear arrays 5 and 6 are composed of multiple gears, increasing the number of parts, complicating the structure, and increasing the cost of manufacturing and assembling the parts. Further, backlash and inertia is imparted by the gears of transmission gear arrays 5 and 6. It is therefore fundamentally difficult to improve the extremely critical start-up responsiveness during activation creating unavoidable mechanical noise. In addition, to shift lens frame 4 independently in the X direction and Y direction respectively, it is necessary to provide transmission gear arrays as well as electro-magnetic motors for each direction. This leads to a large, heavy, complicated and noisy camera.

Image blur suppression device utilizing a vibration motor


The present disclosure is directed to systems and methods for providing a stable topological representation of pathway networks as well as features associated with these networks. The disclosure is exemplified using road networks which have applications in mapping, navigation, and autonomous vehicles. Extensions may be learned through practice of the disclosure. Utilizing implementations disclosed herein may provide advantages for data conflation between different mapping systems and map data while improving overall stability by developing a common reference standard that is tied to semantic features rather than abstract geographic representations.

Mapping or indexing the world is an unbounded problem, with enormous types and levels of detail of information that are regularly changing and with many different possible ways of partitioning the world into distinct features. This problem is particularly challenging for roads or other networks, which can extend for many miles and may be subdivided in many possible ways. As such, it is highly impractical to create and maintain a single map that incorporates all needed data for all possible use cases.
In view of this problem, many different types and forms of maps have been created to handle different data types or use cases. However, these different maps are typically disparate and not directly relatable to each other. Specifically, even a given pair of maps which represent the same geographic area may have certain elements (e.g., roadways, points of interest, etc.) shown at different geographic locations and/or may not have a shared frame of reference for cross referencing such elements. Thus, techniques for improving the ability to combine and/or jointly interpret maps are needed in the art.

Topological basemodel supporting improved conflation and stable feature identity


In a first step, a roof panel and a front header are joined at plural frictional spot joint portions at a front-end frictional joint area, and the roof panel and a rear header are joined at plural frictional spot joint portions at a rear-end frictional joint area. The roof panel and a side roof rail are joined at plural frictional spot joint portions at left-side and right-side frictional joint areas. Subsequently, in a second step, the members are joined at the plural rivet joint portions at a border area of the above-described joint areas, and the members are joined at plural rivet joints at a bounder area of the above-described joint areas. Accordingly, there can be provided a joining method and structure of metal members that can properly reduce deformation due to a thermal strain.

The present invention relates to a joining method and structure of metal members, in which a first metal member and a second metal member, which have different coefficient of thermal expansion from one another, are overlapped and joined.
A structure using steel plate members and aluminum plates has been widely applied to a vehicle body of an automotive vehicle and so on for the purpose of weight reduction in particular. Herein, a mechanical joining, such as a blind rivet, self-piercing rivet, or clinching, has been used as means for joining the steel plate and the aluminum plate. For example, U.S. Patent Application Publication No. 2005/0140158 A1 discloses a joining structure of vehicle-body members in which a joint portion of an aluminum roof panel and joint portions of side, front, rear roof rails are joined by a self-piercing rivet.
Meanwhile, a frictional spot joining for joining the first and second metal members, which have different coefficient of thermal expansion from one another, with a frictional heat has been practically used recently. In this frictional joining, the overlapped first and second metal members are pressed with a rotating tool of a frictional spot joining apparatus from a side of the first metal member, a frictional heat is generated by contact of the rotating tool with the first metal member, the first metal member is softened with the frictional heat generated and made in a plastic flow state, and the overlapped first and second metal members are spot-joined in a solid state (see U.S. Patent Application Publication No. 2005/0035180 A1, for example).
According to the above-described joining structure of vehicle-body members, many rivet joint portions are formed along the joint portions of the aluminum roof panel and the side, front and rear roof rails. Thus, the number of rivets used is considerably large, so joining costs including material cost may increase.
According to the above-described friction spot joining of the first and second metal members having different coefficient of thermal expansion, deformation due to a thermal strain may occur to the member having higher coefficient of thermal expansion because the joining is conduced while the members are in a thermal-expansion state. In particular, in a case where a light-metal member having higher coefficient of thermal expansion and a steel member are spot-joined, there may occur a considerably large deformation due to the thermal strain to the light-metal member.

Joining method and structure of metal members


The present invention provides nucleotide sequences from Coryneform bacteria which code for the MtrA and/or MtrB proteins and processes for the fermentative preparation of amino acids using bacteria in which the mtrA and/or mtrB genes are attenuated.

1. Field of the Invention
The present invention provides nucleotide sequences from Coryneform bacteria which code for the MtrA and/or MtrB proteins and processes for the fermentative preparation of amino acids using bacteria in which the mtrA and/or mtrB genes are attenuated.
2. Discussion of the Background
L-Amino acids, in particular L-lysine, are used in human medicine and in the pharmaceuticals industry, in the foodstuffs industry and very particularly in animal nutrition.
It is known that amino acids are prepared by fermentation from strains of Coryneform bacteria, in particular Corynebacterium glutamicum. Because of their great importance, work is constantly being undertaken to improve the preparation processes. Improvements to the process can relate to fermentation measures, such as, for example, stirring and supply of oxygen, or the composition of the nutrient media, such as, for example, the sugar concentration during the fermentation, or the working up to the product form by, for example, ion exchange chromatography, or the intrinsic output properties of the microorganism itself.
Methods of mutagenesis, selection and mutant selection are used to improve the output properties of these microorganisms. Strains which are resistant to antimetabolites or are auxotrophic for metabolites of regulatory importance and which produce amino acids are obtained in this manner.
Methods of the recombinant DNA technique have also been employed for some years for improving the strain of Corynebacterium strains which produce L-amino acid, by amplifying individual amino acid biosynthesis genes and investigating the effect on the amino acid production.
However, there remains a critical need for improved methods of producing L-amino acids and thus for the provision of strains of bacteria producing higher amounts of L-amino acids. On a commercial or industrial scale even small improvements in the yield of L-amino acids, or the efficiency of their production, are economically significant. Prior to the present invention, it was not recognized that attenuating the mtrA and/or mtrB genes encoding response regulator and histidine protein kinase proteins, respectively, would improve L-amino acid yields.

Nucleotide sequences coding for the MtrA and/or MtrB proteins


A medical and dental instruments washer is capable of washing medical and dental instruments clean within a few minutes. The washer contains a watertight chamber with a means for holding the instruments. A pump recirculates the cleaning solution within the chamber at a velocity and flow rate which is sufficient to wash the instruments.

The present invention relates to the field of medical and dental instrument cleaning, and more particularly, to a hydro impact medical and dental instruments and other armamentarium washer.
In the conventional technique of cleaning medical and dental instruments, the instruments are first hand scrubbed using brushes with detergent and water. Subsequently, the instruments are placed in an ultrasonic cleaner designed to clean instruments using an ultrasonic solution and action. After the instruments are removed from the ultrasonic cleaner, they are placed in an autoclave or other sterilizing device. After these three steps, the instruments are considered sterile and reusable on other patients.
The problem with the conventional process, however, is that it is inefficient, labor intensive., hazardous, and expensive. The ultrasonic cleaner is designed to clean medical and dental instruments without preliminary hand scrubbing. However, this device has been ineffective in cleaning medical and dental instruments so that 100% of the residual material (human tissue, chemicals, medications, etc.) is removed. As a result, it has been necessary to hand scrub the instruments prior to placing them in the ultrasonic cleaner.
There are several disadvantages to hand scrubbing the instruments. The burden on office staff is increased because of the additional labor time required to scrub the instruments. Also, certain instruments are extremely sharp and may contain fine points conducive to puncture or cutting of the skin thereby making scrubbing of the instruments very dangerous. Office personnel are reluctant to hand scrub medical and dental instruments partly because there is an increase in awareness of the possibility of diseases transmitted from patients through contaminated equipment. Furthermore, hand scrubbing of the contaminated instruments may produce a splattering of contaminants with the splashing of water which causes office personnel to be concerned about disease transmission. Finally, hand scrubbing increases office expenses because it is extremely time consuming and inefficient. To properly remove 100% of the residual contaminants left on medical and dental instruments, a person must spend an extensive amount of time hand scrubbing. Accordingly, it is highly desirable to eliminate all hand scrubbing of contaminated medical and dental instruments.
Another disadvantage with the present system is that the ultrasonic cleaners use expensive hazardous ultrasonic solutions which generate hazardous wastes. Elimination of the use of these ultrasonic solutions would eliminate the handling and disposal of hazardous waste and decrease costs associated with the purchase of these expensive solutions. After ultrasonic cleaning, the instruments should be 100% clean of all contaminants for proper sterilization of the instruments. However, since instruments are often not completely clean when they are removed from the ultrasonic cleaner, residue material and other contaminants remain on the instruments even after they are removed from the autoclave or other sterilization device. Because of the inefficiency of the ultrasonic cleaners, tissue residue and other contaminants often remain on the medical and dental instruments prior to their insertion into the sterilizer. High heat within the autoclave sterilizer literally bakes the unremoved contaminants onto the medical and dental instruments which may cause the instruments to be non-usable.
It is therefore an object of the invention to provide a hydro impact medical and dental instruments and other armamentarium washer which eliminates the need for hand scrubbing of dental and medical instruments.
It is also an object of the present invention to provide a medical and dental instruments washer which uses non-hazardous and relatively inexpensive cleaning solutions thereby eliminating the need for expensive hazardous cleaning solutions and their disposal.
It is also an object of the present invention to minimize or possibly eliminate the handling of contaminated medical and dental instruments so that the instruments need not be touched by personnel after use until they are completely cleaned and sterilized.
Another object of the present invention is to decrease the risk of instrument puncture wounds to those who handle medical and dental instruments for the purpose of cleaning and sterilizing this equipment.
It is another object of the present invention to decrease office overhead by minimizing the expenses currently associated with specialized ultrasonic cleaners and solutions, including their disposal.

Hydro impact medical and dental instruments washer


A porous ceramic composition having improved thermal stability is comprised of ceramic grains bonded together by grain boundary phase comprised of silica, yttrium and oxygen wherein the amount of alkali metals, alkaline earth metals and other transition metals not including rare earth metals is at most 2% by weight of the grain boundary phase.

Recently, more stringent regulations of particulate matter emitted by diesel engines have been passed in Europe and the United States. To meet these regulations, it is expected that particulate filters will be necessary.
These particulate filters need to meet multiple contradictory exacting requirements. For example, the filter must have sufficient porosity (generally greater than 55 percent porosity) while still retaining most of the emitted micrometer sized diesel particulates (generally greater than 90 percent capture of the emitted particulates). The filter must also be permeable enough so that back pressure is relatively low while the filter is in the clean state and also remains low while accumulating an amount of soot before being regenerated.
The filter must withstand the corrosive exhaust environment for long periods of time. The filter must have an initial strength to be compression fitted into a container attached to the exhaust system. The filter must be able to withstand thermal cycling (i.e., retain adequate strength) from the burning off of the soot entrapped in the filter (regeneration) over thousands of cycles where local temperatures may reach as high as 1600° C. and typically reach between 600 to 1000° C. under typical regeneration cycles.
The filter must, for long periods of time, withstand the corrosive exhaust environment containing water, nitrous oxide, carbon monoxide, carbon dioxide and hydrocarbons at elevated temperature. In addition, the filter must be stable to not only gaseous environment, but materials that are in contact with the filter such as catalyst and catalyst supports (washcoat particulates such as high surface area alumina) and ash from the exhaust such as alkali and alkaline earth oxides and other metal oxides, phosphates, and sulfates.
Porous ceramic filters generally are made from extrusions of ceramic particulates when heated bond together to form a porous ceramic body made up of many individual ceramic grains ceramically bonded together via a disordered/glassy grain boundary phase, ordered/crystalline grain boundary phase, or a combination thereof of differing composition than the individual ceramic grains. For example, cordierite in many instances has a glassy grain boundary phase. Mullite filters as well often have such glassy grain boundary phases such as those having interlaced crystals grown together have been used and are described by U.S. Pat. Nos. 5,098,455; 6,596,665; 7,528,087; and 7,425,297; and WO 92/11219. Silicon carbide, likewise often has a glassy grain boundary phase or silicon binding phase depending on the process used to sinter the grains together.
Accordingly, it would be desirable to provide both a formation method and a ceramic composition that meets or improves one or more of the aforementioned and in particular improves the thermal stability of such a composition.

Porous mullite bodies having improved thermal stability


Au bump is provided on an Al pad of a semiconductor chip. Substrate pads are arranged at predetermined pitches on a circuit board. In each substrate pad, the length (L) of a first side parallel to the array direction is shorter than the length (M) of a second side which is orthogonal to the first side. The substrate pads are formed so that the length (L) of the first side is smaller than the diameter of the Au bump and the length (M) of the second side is larger than the diameter of the Au bump. A solder bump is formed on each substrate pad and it melts to cover the Au bump. At the time of bonding, the width of the solder bump in the direction parallel to the first side is smaller than the diameter of the Au bump, and the width thereof in the direction parallel to the second side is greater than the diameter of the Au bump.

1. Field of the Invention
The present invention relates to a structure for bonding a semiconductor device to a substrate and, more particularly, to a structure in which a semiconductor device is bonded to a substrate by bonding a bump provided on an electrode of the semiconductor device to a bump provided on an electrode of the substrate.
2. Description of Related Art
Referring to FIG. 1A, a metal connecting terminal 104 formed by an Au ball is provided on a bonding pad 107 of a semiconductor element 105. Provided on a substrate pad 111a of a substrate 111 is a metal section 112 formed by solder. When bonding the metal connecting terminal 104 and the metal section 112 face down, Au which forms the metal connecting terminal 104 is diffused in the metal section 112 to produce an Au-Sn eutectic alloy. The pattern of the substrate pad 111a is generally circular or square. A joint 113 between the metal connecting terminal 104 and the metal section 112 bulges in the middle thereof like a barrel as shown in FIG. 1B in the process of the melting and solidifying of solder. The section of the joint 113 obtained by cutting it horizontally is circular. Such a conventional structure wherein a semiconductor device is bonded to a substrate has been disclosed, for example, in Japanese Unexamined Patent Publication No. 62-281435, "THE DESIGN OF FLIPCHIP JOINT BY OTHER METAL BUMP--FLIP CHIP ATTACH TECHNOLOGY" (IMC 1994 Proceeding, Omiya, Apr. 20 to Apr. 22, 1994), and "THE DESIGN AND RELIABILITY OF FLIP CHIP ATTACH JOINT ON SURFACE LAMINAR CIRCUIT" (ISHM '93 Proceedings).
In the conventional connecting structure, since the joint between the semiconductor element and the substrate is shaped like a barrel, the stress due to the mismatch in coefficient of thermal expansion between the semiconductor element 105 and the substrate 111 is concentrated on the joint between the bonding pad 107 and the metal connecting terminal 104 or on the joint between the substrate pad 111a and the metal section 112, leading to a shortcoming that breakage is apt to happen at these joints. In particular, the joint between the substrate pad with low rigidity and the metal section is vulnerable.
Further, molten solder flows out of the substrate pad; therefore, when the interval between adjacent substrate pads which are disposed with a narrow pitch is decreased, a solder bridge is likely to be formed, frequently causing contact between adjacently disposed substrate pads through solder.

Structure for bonding semiconductor device to substrate


A method of detecting an internet attack against a computing device is disclosed. The method of detecting an internet attack against a computing device comprising the steps of receiving a plurality of incoming network packets; extracting a plurality of incoming feature packets based on the plurality of incoming network packets; predicting a predicted incoming feature packet based on the plurality of incoming feature packets; obtaining a first classification data based on one of the incoming feature packets using a first classifier; obtaining a second classification data based on the predicted incoming feature packet by using a second classifier; and performing at least one remedy action if the first classification data or the second classification data identifies the internet intrusion attack; wherein each of the plurality of incoming feature packets and the predicted incoming feature packet comprise a plurality of incoming features and a plurality of predicted features respectively.

Our everyday activities rely heavily on the internet. For example, e-mail and e-commerce are all depended on the internet. Undoubtedly, the internet is now becoming more and more important to all of us. With the rise of internet use, numbers of internet attacks have also increased dramatically. As a result, network security has become increasingly important. A robust internet intrusion detection system is vital component to an effective network security system. Conventional internet intrusion detection system and/or method only check if an incoming network packet is a potential threat to a computing device. If it turns out to be a real threat, it may be too late for the network security system to act in order to protect the computing. Since hackers continue to alter their attacks, some attacks may not contain the attack features that are known to the internet intrusion detection system and/or method. Accordingly, there is a need for a system and/or method to improve internet intrusion detection in order to enhance network security.

Method for predicting and detecting network intrusion in a computer network

MACAU UNIVERSITY OF SCIENCE AND TECHNOLOGY


A semiconductor memory device includes a refresh timer for generating a refresh clock pulse, a binary counter for generating a predetermined number of signals of different frequencies and a circuit for generating a self-refresh enable signal in response to the signal transmitted from the binary counter. A back-bias clock pulse generator is also included having first, second and third selectors, of which the third selector selects one of the signals transmitted from the binary counter in response to a signal output from each of the first and second selectors. A back-bias generator having an oscillator and a back-bias voltage detecting circuit and a selection circuit for receiving the output signal from the back-bias voltage detection circuit is attached thereto. A signal is transmitted to the oscillator in response to the self-refresh enable signal. The oscillator output, together with the output of the back-bias control pulse generator, cause a driver control circuit to feed a drive signal to a charge pump during a self-refresh operation.

1. Field of the Invention
This invention relates to a semiconductor memory device, and more particularly to a semiconductor memory device having self-refresh and back-bias circuitry.
2. Description of the Related Art
A self-refresh operation is performed to protect data stored in memory cells of a semiconductor memory device such as a DRAM (dynamic RAM). The self-refresh operation regenerates stored information in all memory cells during a given period using a refresh timer.
During the self-refresh operation, a normal read-write operation is interupted. The power consumed during the self-refresh operation is mainly due to a self-refresh current, a back-bias current and a current consumed by a back-bias generator.
The back-bias generator detects a substrate voltage level (also known as back-bias voltage). An oscillator and charge pump circuit provided therein are controlled in response to the detected substrate voltage. The operation and structure of a conventional back-bias generator are disclosed in U.S. Pat. No. 4,471,290.
The self-refresh operation regenerates information in memory cells during a given period under the control of a refresh timer and an address counter coupled thereto. During this period, write circuits associated with peripheral circuits of a memory array are disabled. The address counter is coupled to an address buffer so as to continue a write operation when the refresh operation is completed. Conventional self-refresh circuitry is disclosed in U.S. Pat. Nos. 4,809,233, 4,829,484 and 4,939,695.
The self-refresh operation and the back-bias operation are provided for preserving data in memory cells. The back-bias operation maintains an electric potential of a substrate at a predetermined level. The self-refresh operation occurs during a self-refresh period to protect the data stored in memory cells. The back-bias generator must be inactive during the self-refresh operation. If not deactivated, the back-bias generator consumes power unnecessarily during this period. A semiconductor memory device having both these functions is disclosed in an article published by ISSCC of IEEE, pp 230-231, entitled "A 38ns 4 Mb DRAM with a Battery Back-up (BBU) Mode" (February 1990).
FIG. 1A shows a configuration of a semiconductor memory device disclosed in the above article. The 4Mbit DRAM includes a batery-backup (BBU) mode. The BBU mode is a kind of self-refresh mode, however, its power dissipation is reduced compared to that of a normal refresh operation. More specifically, BBU is an operation mode during which the data retention operation is performed in a VLSI semiconductor memory device having low power consumption as used in a portable computer, such as lap-top or note-book personal computers which are powered by a battery.
FIG. 1B shows a timing diagram for the BBU mode for the circuit in FIG. 1A. The DRAM enters the BBU mode when the CAS is held low for more than 16 ms after a CBR (CAS before RAS) sequence, without a refresh cycle. The BBU mode continues as long as the CAS is low, and the DRAM is reset to the normal mode on rising RAS.
The refresh timer, consisting of a ring oscillator and binary counters, generates a refresh request signal with a 64 .mu.s period. As a result, all memory cells are refreshed within 4096 cycles per 256 ms during a BBU mode. This refresh period is 16 times longer than than of prior self-refresh circuits used in similar 4Mbit DRAMs.
FIG. 2 shows a circuit diagram of the back-bias (Vbb) generator and BBU control circuit interconnection of FIG. 1A. The duty cycle of this circuit is one eighth that in the normal operation since the substrate current during BBU mode is lower than in normal mode. This back-bias generator works during reset and sensing operations as determined by the refresh request signal output from the BBU control circuit.
When the refresh timer supplies a signal having a period of 16 ms to the BBU control circuit, the BBU control circuit generates a BBU enable signal. After the BBU enable signal is generated, the refresh timer generates a clock pulse of 64 .mu.s period, and the BBU control circuit generates a refresh request signal in response to the 64 .mu.s clock pulse. Based on the refresh request signal, the refresh operation is performed by operating one array driver each 64 .mu.s period.
With reference to FIG. 2, the refresh request signal from the BBU control circuit controls the operation of an oscillator used in connection with the back-bias generator. While the refresh request signal is at logic "low" state, i.e., while the refresh operation is performed, the logic "low" state refresh request signal disables a NAND gate of the oscillator so as to inactivate the back-bias generator.
As described, the back-bias generator is active while the refresh request signal is enabled and is inactive while the self-refresh operation is performed. As shown in prior art FIGS. 1A, 1B and 2, the refresh request signal is generated by the refresh timer so as to provide a constant period (or constant frequency).
The refresh period, which is selected to be 64 .mu.s in the above embodiment, is chosen using a predetermined number of binary counters as shown in FIG. 1. When it becomes necessary for a user to vary the refresh period to optimize power consumption in a particular system, changing the number of binary counters may be a great inconvenience.

Semiconductor memory device having self-refresh and back-bias circuitry


A graphite-backed metallic x-ray tube target assembly has a rotary shaft which passes through the central opening of the annular graphite substrate and is secured to the metallic disk-shaped target. In order to protect the shaft from heat radiated from the graphite substrate, at least one tubular heat shield is brazed to the target and disposed between and separate from the inner wall of the annular graphite substrate and the outer peripheral surface of the shaft. For further protection, a tubular heat shielding member may be disposed inside the other heat shield, between the outer heat shield and the shaft. In order to minimize the heat conduction from the outer heat shield to the inner heat shielding member, they are mostly separated and attached to each other only along their bottom edges where they are tack-welded together at mutually separated positions such that the inner heat shielding member is supported entirely by the outer heat shield.

This invention relates to an x-ray tube target assembly, and more particularly to a rotary metal-graphite composite target having integrally attached heat shields.
Rotary metal-graphite composite target assemblies for x-ray tubes have been known in prior art. For example, the U.S. Pat. No. 4,901,338, discloses this type of assembly, that comprises an annular graphite substrate which is secured to the back surface of a disk-shaped target made, for example, of a metal material such as tungsten, molybdenum or related alloys, such as TZM. A rotary shaft supported by bearings is secured to the disk-shaped target and passes through the central opening of the annular graphite substrate. Since the heat from the target can adversely affect the lifetime of the bearings and as a result the x-ray tube as a whole, the portion of outer surface of the shaft inside the annular graphite substrate is covered with a heat-insulating material. This protection is not sufficient to adequately shield the shaft and the bearings from the heat generated by the graphite substrate.

X-ray tube target assembly with integral heat shields


An improved water decontamination process comprising contacting water containing anionic contaminants with an enhanced coagulant to form an enhanced floc, which more efficiently binds anionic species (e.g., arsenate, arsenite, chromate, fluoride, selenate, and borate, and combinations thereof) predominantly through the formation of surface complexes. The enhanced coagulant comprises a trivalent metal cation coagulant (e.g., ferric chloride or aluminum sulfate) mixed with a divalent metal cation modifier (e.g., copper sulfate or zinc sulfate).

The present invention relates to decontamination of fluids containing ionic contaminants, especially water containing anionic contaminants, such as arsenic and chromium in the form of arsenate, arsenite, and chromate. In particular, the present invention relates to an improved water decontamination process comprising contacting water containing anionic contaminants with an enhanced coagulant that binds anionic species predominantly through the formation of surface complexes, wherein the sorbent material comprises a trivalent metal cation-based coagulant mixed with a divalent metal cation modifier.
For purposes of this disclosure, unless otherwise specified, the term "metal oxides" is intended to include both metal oxides and metal hydroxides. Likewise, the term "metal sulfates" is intended to include both metal sulfates and hydrous metal sulfates. Similarly, for purposes of this disclosure, "arsenic contaminants" includes arsenates, AsV, and arsenites, AsIII.
Arsenic contaminants are examples of anionic contaminants that may be present in water as a result of natural as well as human-mediated causes. The long-term availability of safe and affordable drinking water depends, in part, on availability of effective and economical treatment means for removing arsenic contaminants (as well as other anionic contaminants, including chromate) from water. Successful treatment strategies, in turn depend on not otherwise significantly altering the water characteristics (for example, its pH) in ways that would make it non-potable.
Arsenic and other anionic contaminants likewise pose risks when present in fluids other than drinking water sources. For example, wastewater streams often contain such contaminants and require remediation even where they are not considered to be directly associated with potable drinking water sources. Inorganic arsenic in groundwater usually exists as a combination of neutral AsIII (arsenite) and anionic AsV (arsenate). Arsenite is believed to be more toxic than arsenate. Conventional treatment methods generally remove arsenate more efficiently than arsenite because of coulombic attraction. Fortunately, AsIII (arsenite) is easily oxidized to AsV (arsenate) by chlorine, permanganate, ozone, chlorine bleach, and peroxides (some of which are used in conventional water treatment systems). However, AsIII, (arsenite) is not easily oxidized by chlorine dioxide (ClO2), preformed chloramines, oxygen, or UV light.
Various sorbent methods for removing arsenic contaminants and other anionic contaminants from water have been used and developed previously. For example, certain trivalent metal oxide compounds, such as Al2O3 and Fe2O3 have been demonstrated to sorb anionic contaminants, including arsenic contaminants, from water. A drawback associated with use of such trivalent compounds alone is that, because they typically exhibit a point of zero charge from pH 7 to 9, the water to be treated may need to be acidified in order for these compounds to sorb anions to a significant degree. Thus, after treatment, in order to restore the potability of the treated water, further amendments must be added to bring the pH back up to a safely drinkable range. Similarly, tetravalent metal oxides such as SiO2 could be effective anion sorbents, however, their point of zero charge is typically around pH 2, so extremely acidic conditions would needed for tetravalent metal oxides to sorb anions. Additionally, these substances are considered likely to fall outside of the range of useful sorbents because of other chemical issues associated with operating at such low pH.
The divalent metal oxide MgO or hydroxide, Mg(OH)2, likewise, has been shown chemically to sorb anions including arsenic in water. Although use of MgO does not necessitate driving the pH of water outside of the potable range (divalent metal oxides tend to exhibit a point of zero charge that is pH 10 or higher), the long-term effectiveness of MgO as a sorbent for water decontamination, however, can be limited. This is due to its tendency to form carbonates in the presence of carbon in the water from natural (e.g., biological and atmospheric) sources. When this occurs, the carbonate species formed at the surface lack any significant electrostatic attraction for negatively charged ions. Thus, the sorbency of the MgO can be short-lived, absent taking steps to reverse the carbonate reaction and restore the sorbent.
The sorbency methods just discussed rely on the electrostatic attraction between positively charged surface species and negatively charged (i.e., anionic) contaminants. An altogether different mechanism that has been exploited to decontaminate water containing ionic contaminant species is ion exchange. Examples of ion exchange materials suitable for water decontamination include hydrotalcites (which exchange anions) and zeolites (which exchange cations). Although ion exchange materials have been shown to be effective without causing the types of problems associated with Fe2O3 and Al2O3 (pH concerns) or MgO (carbonate issues), ion exchange materials can be very expensive. Zeolites that allow for separations based on size are also used in some decontamination applications, but they do not sorb anionic species such as chromate and arsenic contaminants in water.
Coagulation is a commonly used method for treating water. Existing coagulation approaches for treating drinking water, wastewater, and surface water rely traditionally on adding trivalent metal cation coagulants (e.g., based on Fe(III) or Al(III)) to the contaminated water. The principal use of coagulants is to destabilize particulate suspensions and to enhance the rate of floc formation. Examples of these trivalent cation metal coagulants include hydrolyzable metal salts (HMS), such as iron-based salts (e.g., ferric chloride, ferric sulfate, and ferrous sulfate) and aluminum-based salts (e.g., aluminum sulfate, alum, and sodium aluminate (NaAlO2)). The hydrolyzable metal salt coagulant (e.g., ferric chloride or alum) is added to the water containing anionic contaminants (and sometimes containing organic matter). The pH is then adjusted to near the pH of minimum solubility of, respectively, ferric hydroxide Fe(OH)3 or aluminum hydroxide Al(OH)3 (pH˜7–8), whereupon the salts hydrolyze to form a series of iron or aluminum hydroxide precipitates (i.e., hydrolysis products), generically called flocs. The most commonly used coagulants in industry are ferric chloride and alum. Typically, they are supplied from the manufacturer in a highly concentrated form, and are injected into the flowstream of a water treatment plant upstream of a mixing or flocculation chamber.
The flocs formed by HMS coagulants adsorb natural organic materials (NOMs), and certain inorganic materials, such as phosphates, arsenic compounds, fluoride, selenate, and borate. Negatively charged anions, including AsV, subsequently sorb from solution to bind with positively charged surface groups on the floc. The anion contaminant (e.g., arsenate) is sorbed as a tightly bound complex on the floc, which is removed from solution when the floc is separated from the water (typically in a clarifier or through filtration), leaving purified water. When an aluminum hydroxide floc is used, the sorbing process is most effective at a pH of 6.0–6.5. In general, iron-based flocs are significantly more effective at removing arsenic than aluminum-based flocs.
The phrases "hydrolyzable metal salts" and "metal salt coagulants" are defined herein to include prehydrolyzed metal salt solutions, such as polyaluminum chloride or polyaluminum hydroxychloride (PACl), and polyiron chloride (PlCl); as well as solutions that contain a strong acid, typically sulfuric acid (e.g., acidulated alum or acid alum).
Special additives (e.g., phosphoric acid, sodium silicate, and calcium salts) can be added to solutions of metal salt coagulants to improve performance or address specific problems. Metal salt solutions are also sold premixed with cationic polyelectrolyte coagulant compounds, such as epichlorohydrin dimethylamine (epiDMA) and polydiallyl dimethylammonium chloride (polyuDADMAC), which belong to a class called quaternary amines.
Polyelectrolytes can also be used to treat water. They are often categorized as either primary coagulant polymers or flocculent polymers (i.e., coagulation aid). The primary coagulant polymers can be used alone, or in combination with, metal salt coagulants, such as alum. Additionally, the flocculent polymer coagulant aids are often added after flocculation to increase the size and strength of particle aggregates (i.e., flocs). Activated silica (SiO2) can also be used as a coagulation aid in combination with alum to improve the efficiency of flocculation and sedimentation, especially in cold winter months.
The costs of using a coagulation process for water treatment include the supply costs of the coagulant medium; downtime due to backwash and filter replacement; and the cost of replacing clogged filters. As the regulations for water quality become tighter, as has recently happened for arsenic levels in water (i.e., from 50 ppb to 10 ppb), the costs of treating water can greatly increase, and can become prohibitively high for small community water systems and individual wells.
The need remains, therefore, for an improved water decontamination process that is more effective and less expensive than existing coagulation methods for removing anionic contaminants, including chromate, arsenates and arsenites.

Method of removing arsenic and other anionic contaminants from contaminated water using enhanced coagulation


Black-and-white, aqueous-based, silver halide-containing photothermographic materials have increased stability after imaging with the incorporation of at least 0.0002 mol/m2 of a halogen-substituted tetraazaindene compound.

Silver-containing photothermographic imaging materials (that is, photosensitive thermally developable imaging materials) that are imaged with actinic radiation and then developed using heat and without liquid processing have been known in the art for many years. Such materials are used in a recording process wherein an image is formed by imagewise exposure of the photothermographic material to specific electromagnetic radiation (for example, X-radiation, or ultraviolet, visible, or infrared radiation) and developed by the use of thermal energy. These materials, also known as "dry silver" materials, generally comprise a support having coated thereon: (a) a photocatalyst (that is, a photosensitive compound such as silver halide) that upon such exposure provides a latent image in exposed grains that are capable of acting as a catalyst for the subsequent formation of a silver image in a development step, (b) a relatively or completely non-photosensitive source of reducible silver ions, (c) a reducing composition (usually including a developer) for the reducible silver ions, and (d) a hydrophilic or hydrophobic binder. The latent image is then developed by application of thermal energy.
In photothermographic materials, exposure of the photographic silver halide to light produces small clusters containing silver atoms (Ag0)n. The imagewise distribution of these clusters, known in the art as a latent image, is generally not visible by ordinary means. Thus, the photosensitive material must be further developed to produce a visible image. This is accomplished by the reduction of silver ions that are in catalytic proximity to silver halide grains bearing the silver-containing clusters of the latent image. This produces a black-and-white image. The non-photosensitive silver source is catalytically reduced to form the visible black-and-white negative image while much of the silver halide, generally, remains as silver halide and is not reduced.
In photothermographic materials, the reducing agent for the reducible silver ions, often referred to as a "developer," may be any compound that, in the presence of the latent image, can reduce silver ion to metallic silver and is preferably of relatively low activity until it is heated to a temperature sufficient to cause the reaction. A wide variety of classes of compounds have been disclosed in the literature that function as developers for photothermographic materials. At elevated temperatures, the reducible silver ions are reduced by the reducing agent. This reaction occurs preferentially in the regions surrounding the latent image. This reaction produces a negative image of metallic silver having a color that ranges from yellow to deep black depending upon the presence of toning agents and other components in the photothermographic imaging layer(s).
Differences Between Photothermography and Photography
The imaging arts have long recognized that the field of photothermography is clearly distinct from that of photography. Photothermographic materials differ significantly from conventional silver halide photographic materials that require processing with aqueous processing solutions.
In photothermographic imaging materials, a visible image is created in the absence of processing solvent by heat as a result of the reaction of a developer incorporated within the material. Heating at 50° C. or more is essential for this dry development. In contrast, conventional photographic imaging materials require processing in aqueous processing baths at more moderate temperatures (from 30° C. to 50° C.) to provide a visible image.
In photothermographic materials, only a small amount of silver halide is used to capture light and a non-photosensitive source of reducible silver ions (for example, a silver carboxylate or a silver benzotriazole) is used to generate the visible image using thermal development. Thus, the imaged photosensitive silver halide serves as a catalyst for the physical development process involving the non-photosensitive source of reducible silver ions and the incorporated reducing agent. In contrast, conventional wet-processed, black-and-white photographic materials use only one form of silver (that is, silver halide) that, upon chemical development, is itself at least partially converted into the silver image, or that upon physical development requires addition of an external silver source (or other reducible metal ions that form black images upon reduction to the corresponding metal). Thus, photothermographic materials require an amount of silver halide per unit area that is only a fraction of that used in conventional wet-processed photographic materials.
In photothermographic materials, all of the "chemistry" for imaging is incorporated within the material itself. For example, such materials include a developer (that is, a reducing agent for the reducible silver ions) while conventional photographic materials usually do not. The incorporation of the developer into photothermographic materials can lead to increased formation of various types of "fog" or other undesirable sensitometric side effects. Therefore, much effort has gone into the preparation and manufacture of photothermographic materials to minimize these problems.
Moreover, in photothermographic materials, the unexposed silver halide generally remains intact after development and the material must be stabilized against further imaging and development. In contrast, silver halide is removed from conventional photographic materials after solution development to prevent further imaging (that is in the aqueous fixing step).
Because photothermographic materials require dry thermal processing, they present distinctly different problems and require different materials in manufacture and use, compared to conventional, wet-processed silver halide photographic materials. Additives that have one effect in conventional silver halide photographic materials may behave quite differently when incorporated in photothermographic materials where the underlying chemistry is significantly more complex. The incorporation of such additives as, for example, stabilizers, antifoggants, speed enhancers, supersensitizers, and spectral and chemical sensitizers in conventional photographic materials is not predictive of whether such additives will prove beneficial or detrimental in photothermographic materials. For example, it is not uncommon for a photographic antifoggant useful in conventional photographic materials to cause various types of fog when incorporated into photothermographic materials, or for supersensitizers that are effective in photographic materials to be inactive in photothermographic materials.
These and other distinctions between photothermographic and photographic materials are described in Unconventional Imaging Processes, E. Brinckman et al. (Eds.), The Focal Press, London and New York, 1978, pp. 74–75, in D. H. Klosterboer, Imaging Processes and Materials, (Neblette's Eighth Edition), J. Sturge, V. Walworth, and A. Shepp, Eds., Van Nostrand-Reinhold, New York, 1989, Chapter 9, pp. 279–291, in Zou et al., J. Imaging Sci. Technol. 1996, 40, pp. 94–103, and in M. R. V. Sahyun, J. Imaging Sci. Technol. 1998, 42, 23.
Problem to be Solved
A challenge in photothermographic materials is the need to improve their stability at ambient temperature and relative humidity during storage prior to imaging. This stability is referred to as "Natural Age Keeping" (NAK), "Raw Stock Keeping" (RSK) or Shelf-Life Stability. It is desirable that photothermographic materials be capable of maintaining imaging properties, including photospeed and Dmax, while minimizing any increase in Dmin during storage periods. Natural Age Keeping is a problem for photothermographic materials compared to conventional silver halide photographic films because, as noted above, all the components needed for development and image formation in photothermographic systems are incorporated into the imaging element, in intimate proximity, prior to development. Thus, there are a greater number of potentially reactive components that can prematurely react during storage. It is more particularly a problem for aqueous-based photothermographic materials that are prepared using aqueous formulations that leave residual water in the layers.
Another challenge in photothermographic materials is the need to improve the "Dark Stability" (also known as "Archival Stability") of the imaged and processed photothermographic film upon storage in the dark at a given temperature and humidity. It is desirable that the Dmin not increase, and that the Dmax, tint, and tone of the image not change.
A further challenge in photothermographic materials is the need to improve their stability to light exposure after imaging and processing. Referred to as "Desktop Print Stability," the formation of additional image or "print-out" is usually most evident as an increase in Dmin. This effect tends to be especially problematic under high humidity conditions.
The use of 4-hydroxy-6-methyl-1,3,3a,7-tetraazaindene as an antifoggant in a heat-developable material is described in U.S. Pat. No. 4,404,390 (Altland et al.). U.S. Pat. No. 6,413,710 (Shor et al.) describes the use of hydroxy-tetraazaindenes during the preparation of silver halide grains to increase sensitivity from chemical sensitization.
There remains a need to improve Natural Age Keeping, Dark Stability, and Desktop Print Stability without sacrificing desired photospeed and other sensitometric properties.

Halogen substituted tetraazaindene compounds in photothermographic materials


The present invention relates to a nonvolatile semiconductor device using a vertical channel semiconductor device and a method of fabricating the same. The method starts with forming an insulator for device isolating having a depth D in a semiconductor substrate. The semiconductor substrate is etched with an etch depth d so that elevated portions are formed. A first conductive film is formed covering the elevated portions. After selectively and isotropically etched, the first conductive film is anisotropically etched so as to form floating gates on the side surfaces of the elevated portions. Sequently, a device insulating may be performed by selective oxidation technology. Further, a second conductive film is formed and anisotropically etched so that control gates are fabricated on the side surfaces of the elevated portions. In this case, forming a mask on predetermined regions of the elevated portions, the second conductive film may be etched to form gates of planar transistors or wirings. Then, a nonvolatile memory device is completed. If the depth D of the insulator and the etch depth d satisfy the following equation: D>d, a NAND circuit can be fabricated. Furthermore, a NAND circuit comprising planar MOS transistors for selective transistors and vertical channel transistors for memory cells may be manufactured.

1. Field of the Invention
The present invention relates to a technique for fabricating a semiconductor integrated circuit with a greater device density, and more particularly, to field-effect devices adapted for larger scales of integration and also to a method of fabricating such field-effect devices. A semiconductor device according to the invention is used especially advantageously as a nonvolatile semiconductor memory device having floating gates.
2. Description of the Related Art
Some conventional semiconductor devices are formed on a flat plane. Field-effect devices such as a MOS field-effect transistors (MOSFET) or a MISFET have a source, a drain, and a channel arranged substantially on a flat plane. The drain current is made to flow in a direction parallel to the substrate. In this planar device, however, limitations are imposed on the device area reduction as a matter of course. Therefore, in an attempt to obtain larger device densities, methods for manufacturing a planar device from plural layers and methods of fabricating a device structure itself in a form different from a planar structure have been discussed. An example of the latter methods includes a vertical-channel MOSFET proposed by us in Japanese Patent Unexamined Publication No. 13627/1994, which, in turn, corresponds to U.S. Pat. No. 5,350,937 and U.S. pending application Ser. No. 08/268,448, the disclosures of which are herein incorporated by reference. In particular, the drain is located over or under the source so that the drain current flows substantially vertically. This structure permits larger component densities.
The above-cited Japanese Patent Unexamined Publication No. 13627/1994 pertains to a nonvolatile semiconductor memory. Specifically, a floating gate and a control gate are formed by anisotropic etching on side surfaces of elevated portions which are formed on a semiconductor substrate. It is to be noted, however, only the fundamental device structure is shown. Neither the whole memory construction nor the fabrication process is described in detail. For example, with respect to its peripheral circuit, few mentions are made of its structure and fabrication process.

Semiconductor Energy Laboratory Co., Ltd.


In a waste water treatment apparatus and/or method, waste water containing aminoethanol and dimethyl sulfoxide is introduced into a first denitrification tank within a first waste water treatment apparatus. Malodorous gas generated in the first waste water treatment apparatus is decomposed and treated in a second waste water treatment apparatus where another waste water is treated as another system. The second waste water treatment apparatus has a second nitrification tank including a semi-anaerobic section. The malodorous gas is introduced from the first waste water treatment apparatus into a scrubber. The malodorous gas is treated by sludge which is circulated between the second nitrification tank and the scrubber.

The present invention relates to a waste water treatment method and a waste water treatment apparatus. The present invention relates to, as an example, a waste water treatment method and a waste water treatment apparatus in compliance with the total volume control of nitrogen in conformity to partial amendments to Water Pollution Control Law implemented as of April 2004 and in compliance with the emission reduction of toxic substances in conformity to PRTR (Pollutant Release and Transfer Register) Law implemented as of April 2001. The present invention relates to, for example, a waste water treatment method and a waste water treatment apparatus for treating two types of waste water, that is, waste water containing aminoethanol and dimethyl sulfoxide and waste water containing high concentration nitrogen (such as high concentration ammonium waste water, waste developer and dimethylformamide waste liquid) discharged mainly from semiconductor plants. Aminoethanol is designated as one of first-class designated chemicals in PRTR Law. The present invention also relates to, as an example, a waste water treatment apparatus and a waste water treatment method which can implement malodor treatment and microbial treatment without dilution, and therefore are excellent in initial costs, running costs and maintenance costs.
Conventionally, it has generally been regarded as impossible to apply microbial treatment to waste water which contains dimethyl sulfoxide and aminoethanol in a highly-concentrated form, specifically at about 3000 ppm for example, due to high microbial toxicity of aminoethanol.
In the case where microbial treatment has been applied to the waste water containing both aminoethanol and dimethyl sulfoxide, the microbial treatment has generally been applied thereto with the concentrations of aminoethanol and dimethyl sulfoxide are respectively as low as several hundred ppm.
Accordingly, the waste water containing high concentration aminoethanol and/or dimethyl sulfoxide at as high as 3000 ppm or more has been concentrated to about 1/10 with use of an evaporator as a physical method. Resultant concentrated solution has been disposed as industrial waste.
That is to say, the waste water is concentrated by using the evaporator and discharged as industrial waste from plants. In this way, the concentrated solution is deemed as industrial waste, and therefore, quantity of industrial waste from the plants is increased. In the disposal way of the concentrated solution as industrial waste, the concentrated solution has generally been disposed by incineration. Therefore, there have been problems such as air pollution because heavy oil or the like is used as fuel. Moreover, the treatment using the evaporator consumes a large amount of energy and involves large plant equipment, which leads to large initial, running and maintenance costs.
A biological treatment method is disclosed as a conventional art by JP 3467671. This biological treatment method is a nitrification and denitrification method wherein organic waste water in a raw water tank is fed to a denitrification tank and a nitrification tank sequentially by using liquid supply pumps while being circulated between both the tanks. Thereby, ammonia nitrogen contained in the organic waste water is reduced to nitrogen gas by biological nitrification and denitrification actions to be removed. Further, sludge and treated water are separated by means of a filtration membrane unit immersed in the waste water in the nitrification tank with use of a suction pump.
The feature of the nitrification and denitrification method is that part of organic waste water fed from the denitrification tank to the nitrification tank is ejected to the organic waste water in the denitrification tank, wherein a conduit pipe from the denitrification tank to the nitrification tank diverge in some midpoint, and an end of a diverged pipe is opened to the denitrification tank.
Another biological treatment method is disclosed in JP 3095620 as another conventional art. In this biological treatment method, a biological nitrogen removing apparatus is used. The biological nitrogen removing apparatus has a denitrification tank for receiving inflow of raw water containing organic substances, a nitrification tank for receiving inflow of denitrification tank mixtures from the denitrification tank, a nitrified liquid circulation channel for circulating nitrified liquid of the nitrification tank to the denitrification tank, and a nitrification tank diffuser placed inside the nitrification tank.
Specifically, the biological nitrogen removing apparatus has a denitrification tank, which is provided with a zone filled with denitrifying bacteria-immobilizing carriers, so as to catch and remove suspended solids in the raw water flowing into the denitrification tank. A raw water introduction channel and a nitrified liquid circulation channel are linked to a lower position of the zone filled with the denitrifying bacteria-immobilizing carriers in the denitrification tank. A sludge hopper section is provided on the bottom section of the denitrification tank so as to accumulate and remove the suspended solids caught in the zone filled with the denitrifying bacteria-immobilizing carriers. The sludge hopper section is provided with a hopper diffuser.
However, as stated above, microbial treatment has not conventionally been applied to the waste water containing high concentration aminoethanol and dimethyl sulfoxide at about 3000 ppm, in general, due to high biological toxicity. Therefore, the above-stated concentration method have been used for treating the waste water containing high concentration aminoethanol and dimethyl sulfoxide which cannot undergo microbial treatment due to high biological toxicity.
However, the concentration method has such problems as increase in energy consumption and increase in industrial waste as concentrated solution.
On the other hand, it has been demanded to efficiently treat malodor including sulfur generated during waste water treatment while reducing initial costs, running costs and maintenance costs.


Group 4 metal-containing organosilicon dendrimers are described. Also described are methods for synthesizing the dendrimers. The dendrimers can be useful in several applications including as olefin polymerization and copolymerization catalysts and as silane polymerization catalysts.

1. Field of the Invention
The invention relates to Group 4 metal-containing organosilicon dendrimers, methods of preparation thereof, and methods of use thereof.
2. Description of the Prior Art
Dendrimers are chemical compounds characterized by a regular, highly branched structure as shown schematically in FIG. 1. Dendrimer 10 of FIG. 1 is a second generation dendrimer, denoted by a generation number, G.sub.n, equal to G.sub.2. Dendrimer 10 includes an initiator core 12 from which branches, whose number is denoted by N.sub.n and characterized by length l, emanate. Four main branches (N.sub.1 =4) emanate directly from initiator core 12 and form four primary branch points 14 from each of which three new branches (N.sub.1 =3) emanate and form secondary branch points 16 as the next generation polymer is produced. Branches that emanate from branch points 16 terminate in end groups 20.
Dendrimers are ideally monodisperse, i.e., they consist of single, identical species, all of which have the same composition and molecular weight. Dendrimers can be characterized by a range of molecular weights, ranging from relatively low oligomeric molecular weight, to relatively high polymeric molecular weights. Dendrimer molecular weights can depend on several factors including length of the arms, the extent of arm branching, the functionality of the branching groups in the arms, the length of connecting groups between branching sites and the functionality of the dendrimer core. Typically, dendrimers are soluble in organic solvents and their solubility in a particular solvent can be optimized by the choice of appropriate functional groups for the end groups. However, end groups may be chosen so as to result in water solubility. Dendrimers of intermediate generation number, G.sub.n, typically with n in the range of from about 1 to about 10, depending upon the dendrimer system, are characterized by an uncongested periphery with empty space between neighboring end groups. As such, intermediate generation number dendrimers have high surface areas and a relatively large proportion of unoccupied dendrimer interior volume.
Dendrimers can be synthesized using a "divergent procedure", according to which dendrimers are grown outward by repetitive chemical steps using a multifunctional central core molecule as the starting material. According to this approach, successive hydrosilylation and vinylation, or alternatively, allylation, steps are performed on the polyfunctional core, which can be a tetravinylsilane or tetrallylsilane to form the dendrimeric structure. The divergent procedure is reliable and effective, provided that appropriate reaction conditions are maintained until that point in the synthesis when steric congestion at the dendrimer periphery hinders further dendrimer growth. However, the divergent procedure is multistep, relatively expensive and, hence, may not ideally suited for large scale commercial applications.
Alternatively, a "convergent procedure" can be used to synthesize dendrimers by preparing segments of the dendrimer first and then attaching the segments to a central core molecule. However, the convergent procedure is also multistep, relatively expensive and, hence, may not be ideally suited for large scale commercial applications.
A third approach for dendrimer synthesis is a "cascade procedure". According to this approach, a single monomer is used in a single type of reaction to prepare the dendrimer. Generally, a cascade procedure begins with a monomer containing two different reactive functions, x and y, more specifically, one x function and two or more y functions. The x and y functions are selected so that x can react with y, but not with itself. The reaction between x and y is initiated so that branching growth occurs to produce a dendrimer. The structure of the dendrimers produced according to a cascade procedure will not be as regular a structure as that of dendrimers synthesized according to a divergent or convergent procedure. Dendrimers produced using the cascade procedure will be polydisperse rather than monodisperse and have been referred to as "hyperbranched" materials. Typically, the cascade procedure is relatively inexpensive and well-suited to large scale commercial applications.
A type of organosilicon dendrimers, carbosilane dendrimers, and their preparation are described in Seyferth et al., Organometallics, 13 (1994) 2682-2690. A typical dendrimer prepared in the foregoing study is shown in FIG. 2.
Thus, it would be highly desirable to exploit the foregoing dendrimer characteristics, including relatively high surface area and relatively high porosity, for applications including catalysis by preparation of dendrimers having end or interior group substituents with a desired chemical activity. Moreover, it would be highly desirable to exploit the foregoing desirable cascade procedure characteristics for the synthesis of organosilicon dendrimers.

Group 4 metal-containing organosilicon dendrimers and method for synthesizing organosilicon denrimers


A display device is provided. The display device includes a substrate. A first electrode layer is disposed on the substrate. An electrochromic material single layer is disposed on the first electrode layer, wherein the electrochromic material single layer has a plurality of spherical holes inside, and wherein the electrochromic material single layer includes inorganic materials. An electrolytic layer is disposed on the electrochromic material single layer. A second electrode layer is disposed on the electrolytic layer. A power supply is electrically connected to the first and second electrode layers, respectively. The electrochromic material single layer displays red, blue or green colors according to a driving voltage provided by the power supply.

1. Field of the Invention
The invention relates to a display device, and in more particularly relates to a full color electrochromic display device.
2. Description of the Related Art
Electrochromic materials are expected to replace liquid crystal materials as a mainstream material of display applications moving forward. For display applications, full color technology of the electrochromic materials is a key research area following successful development of rapid voltage switching mechanisms. When an electric field is applied to the electrochromic materials, the electrochromic materials may present different colors due to the shift of the color center absorption peak and may show a high absorption of light rays in a visible spectrum range. When no electric field is applied to the electrochromic materials, the electrochromic materials may present a bleached state and show a low absorption of light rays in a visible spectrum range. Potential applications for the electrochromic materials due to the aforementioned colored or bleached state include applications in smart windows for buildings or cars, in order to prevent rising indoor temperature due to sunlight, or low-end display devices. For display device applications, the electrochromic materials may present colors without conventional backlight modules or color filters. Therefore, the electrochromic materials have advantages of higher contrast ratio and very wide viewing angle, for example, 0 degree to 180 degrees. Additionally, the electrochromic materials have advantages of lower energy consumption due to the lower required applied voltage for driving an electrochromic mechanism of about ±1V. Thus, due in part to the aforementioned advantages, application of the electrochromic materials has the potential to breakthrough some of the technological bottlenecks associated with conventional liquid crystal display devices. However, the color gamut for the electrochromic materials is currently not wide enough to comprise the three primary colors (red, blue and green). Therefore, there are still challenges, such as developing an electrochromic display device with full color or flexible substrates capable of full color, before electrochromic display devices may replace conventional liquid crystal display devices.
Therefore, a full color electrochromic display device is needed.

Industrial Technology Research Institute


A composite core for forming a passage in an investment casting mold is provided including a core element. A generally hollow structural element is positioned about an exterior of the core element. The structural element is configured to deform when a force is applied to the structural element. A rigid shell element is integrally formed about the structural element. The shell element is configured to break when the structural element deforms.

Exemplary embodiments of the invention generally relate to investment casting, and more particularly, to a core for forming a passage in an investment casting mold.
Investment casting is a commonly used technique for forming metallic components having complex shapes and geometries. especially hollow components such as those used in aerospace applications for example. The production of an investment cast part generally involves producing a ceramic casting mold having an outer ceramic shell with an inside surface corresponding to the shape of the part, and one or more ceramic cores positioned within the outer ceramic shell, corresponding to interior passages to be formed within the part. Molten alloy is introduced into the ceramic casting mold and is then allowed to cool and to harden. The outer ceramic shell and ceramic core(s) are then removed to reveal a cast part having a desired external shape and hollow interior passages in the shape of the ceramic core(s).
In comparison to other processes, for example sand casting or permanent mold casting, investment casting provides flexibility while maintaining tight tolerances. In particular, controlled solidification investment casting (CSIC) uses rapid directional cooling to enhance microstructure and mechanical properties. CSIC, therefore, may be useful for an expanded range of applications, particularly in the aerospace industry. However, investment casting is limited by the design of passages within the mold. Unlike a sand core used in a sand casting process, the ceramic cores used in CSIC are difficult to remove or destroy without affecting the molded part. As a result, the process of designing passages severely restricts the use of CSIC for applications requiring complex cored passages.


This surge absorber includes an insulating part upon which is formed a conductive layer which is divided into two separate portions by a discharge gap (micro gap) around its circumferential surface; a pair of terminal electrodes which are arranged to oppose the insulating part, and contacts the conductive layer; an insulating tube at the ends of which the terminal electrodes are arranged, and which seals the insulating part in its interior along with seal gases; and a conductive portion provided at least between the terminal electrodes and the conductive layer. As a result, it becomes possible to provide a surge absorber of lower cost, and which is endowed with stabilized performance and high quality, while moreover it exhibits excellent durability.

It is per se known to connect, in the connecting portion between an electronic device which is used as a communication device, such as a telephone set, a facsimile, a modem or the like, and a telecommunication line or a power line, an antenna, or a CRT monitor drive circuit or the like, a surge absorber for protecting electronic components within the device or a printed circuit board to which such components are mounted against destruction due to thermal damage or fire or the like caused by abnormal voltage being applied to portions of the device which can easily suffer electric shock by an abnormal voltage (surge voltage) or abnormal current (surge current) such as lightning surge or electrostatic or the like.
In the prior art, as for example disclosed in Japanese Patent Application, First Publication No. Hei 9-171881, there has been proposed a surge absorber of the discharge type, comprising: element housed within a glass tube, and provided with terminal electrodes at both its ends; a pair of Dumet wires which are inserted into the two ends of the glass tube, and each of which is connected to one of the terminal electrodes, each of them having its ends connected to a lead wire for connection to an external circuit; and cylindrical tube shaped spacers which, along with each surrounding and holding the Dumet wires, are inserted into both the end portions of the glass tube, and seal both end portions of the glass tube. In this case, fluctuations in DC spark over voltage because of the contact between the Dumet wires and the terminal electrodes becoming unstable can easily occur. Furthermore, this surge protector is unreasonable from the point of view of cost, since the cast of materials increase for the larger terminal electrodes.
Furthermore, the electronic devices become more compact, the surface mounted discharge type surge absorber become more popular. A surface mounted surge absorber (of the Murph type) is equipped with terminal electrodes which have no lead wires, and when being mounted upon a substrate, the terminal electrodes are connected to the substrate by soldering. In this type of surge absorber, as for example disclosed in Japanese Patent Application, First Publication Nos. 2002-110311 and 2002-134247, has a surge absorption element with a micro gap. An example of the structure of this type of surge absorber is shown in FIG. 10.
A surge absorption element 1 consists of a ceramic part (insulating part) 3 of circular cylindrical form, upon the circumferential surface of which there is spread a conductive layer 2, with a so called micro gap M being formed at the central portion of this conductive layer 2, and with a pair of cap electrodes being fitted to both ends of this ceramic part 3. This surge absorption element 1 is housed within a glass tube 5 which is filled with seal gases G, and the two ends of this glass tube 5 are sealed by heating at a high temperature by a pair of terminal electrodes 6, thus constituting the discharge type surge absorber.
In recent years, the demand has become more strident for provision of a lower cost surge absorber which, in addition to providing stabilized performance and high quality, is also endowed with durability and high surge resistance capability. Consequently, there have arisen problems with relation to dimensional accuracy of the surge absorption element and the glass tube and the terminal electrodes, and, in particular, a crucial technical assignment has arisen with regard to preventing the occurrence of gaps between the surge absorption element and the enclosing electrodes, and with regard to maintaining secure and reliable contact between the surge absorption.
Furthermore, in recent years, with regard to surge absorbers, a sufficiently responsive performance has been demanded even for applications which require a high surge current capability, as when connecting a telecommunication line or a power supply line or the like. Furthermore, with a Murph type surge absorber, there is a possibility of breaking the glass tube during surface mounting. Due to this, it has been considered to replace the glass tube with a ceramic tube. With a surge absorber which uses a glass tube, the ceramic part is inserted into the glass tube, and after the terminal electrodes have been placed at both ends of the glass tube, in that state, the glass tube is melted in a high temperature oven, and the terminal electrodes are tightly fixed to glass tube so that thereby the glass tube is sealed. When the glass tube is cooled after seal process a sufficiently good ohmic contact is obtained between the terminal electrodes and the conductive layer of the ceramic part, since a residual stress force is set up in the compression direction owing to the thermal expansion coefficient differences between glass tube and ceramic part.
However, when a ceramic tube substitutes for the glass tube, since the thermal expansion coefficients differences of the ceramic tube and the ceramic member is comparatively small as compared with the situation described above, the residual stress which is generated during cooling process is small, so that it may occur that insufficiently good ohmic contact is provided between the terminal electrodes and the conductive layer of the ceramic part. In such a case, the electrical properties of the surge absorber, such as DC spark over voltage, become unstable.
The present invention has been conceived in the light of the above circumstances, and its objective is to provide a lower cost surge absorber which is endowed with excellent durability and a high surge current capacity, and which exhibits stable performance and high quality.

Surge absorber and production method therefor


The present invention relates to medical devices and provides an intra-oral scanner for a digital impression. The intra-oral scanner has a window for limiting an acquisition range. The intra-oral scanner sequentially includes, along a light path, a three-color LED light source module, a microlens array sheet, a collimator lens group, a gray coding grating plate, an optical deflector, a projection lens group, a first reflector, a second reflector and a third reflector positioned in parallel with each other with their reflective surfaces opposing to each other, and a camera. The intra-oral scanner can perform a scan directly in the human oral cavity and obtain the digital impression of three-dimensional topography of the tooth and soft tissue in real-time, thereby meeting the requirements of dentists and dental technicians to quickly and accurately obtain the oral impressions.

Oral impressions are an important information storage source in the clinical dental clinics and repair processes. Almost every patient needs to obtain one or more impressions. By comparing multiple impressions obtained prior to, during, and after treatment, doctors can understand the effect of the treatment, thereby improving the accuracy of the examination, diagnosis and treatment. Dental technicians also need to determine the shape of dentures according to the impressions.
At present, easy operation, high precision, convenient storage digital impression technology is gaining more and more dental medical expert's attention. More and more efforts and funds are put into the research of this technology. Digital impressions may be taken in two manners according to the position of the scan, i.e. extra-oral scan and intra-oral scan. The intra-oral scan is a new scan manner emerging in recent years. In the intra-oral scan, a probe is inserted into the patient's oral cavity to directly measure the teeth to obtain a digital impression in real-time. In comparison with the extra-oral scan, the intra-oral scan has many advantages. Firstly, it improves patient satisfaction. Secondly, to the doctor, the intra-oral scan further improves the quality of the impression, reduces the number of operation steps and operation time, greatly reduces the material consumption and labour force, and provides effective guidance for doctor's operation. Finally and most importantly, it also establishes a communication platform between the patient and doctor, which allows the doctor and patient to discuss the obtained digital impressions. This not only allows the patient to understand his/her disease conditions and the intent of the doctor, but also allows the doctor to better formulate or correct a treatment program based on the needs of the patient, thus making the doctor-patient relationship more harmonious.
Due to the particularity of the real-time intra-oral scan, in addition to the requirement of a compact probe (can be inserted into the oral cavity), it is also required that the scan be as fast as possible. Therefore, it is desired to provide an intra-oral scan technology which can perform a scan directly in the human oral cavity and obtain the scan result in real-time.

Intra-oral scanner for digital impression and real-time reconstruction system for inner surface topographic image of oral cavity