A method and an apparatus for removing a liquid, i.e a wet processing liquid, from a surface of at least one substrate is disclosed. A liquid is supplied on a surface of substrate. Simultaneously or thereafter besides the liquid also a gaseous substance can be supplied thereby creating at least locally a sharply defined liquid-vapor boundary. The gaseous substance and the liquid can be selected such that the gaseous substance is miscible with the liquid and when mixed with the liquid yields a mixture having a surface tension lower than that of the liquid. According to the invention, the substrate is subjected to a rotary movement at a speed to guide said liquid-vapor boundary over said substrate thereby removing said liquid from said substrate.

The present invention is related to an apparatus and a method of removing a liquid from a rotating substrate. This liquid can be any wet processing liquid as e.g. a wet etching liquid or a cleaning liquid. It can also be a rinsing liquid. The invention is applicable for a number of wet processing steps which are frequently used in the fabrication process of integrated circuits or liquid crystal displays.
The complete and efficient removal of a liquid from a surface of a substrate is a multiply repeated step in e.g. the fabrication process of integrated circuits. Such a step can be performed after a wet etching step or a wet cleaning step or a wet rinsing step or any other step used in said fabrication process wherein said substrate is treated or exposed or immersed in a liquid. Said substrate can be a semiconductor wafer or a part thereof or a glass slice or any other slice of an insulating or conductive material.
The manufacturing of integrated circuits evolves towards processing of each substrate individually rather than in batches of several substrates. In state of the art IC manufacturing, most processing steps as e.g. implantation steps, deposition steps are already performed in a single substrate mode. On the other hand, wet processing steps such as e.g. cleaning steps and subsequent liquid removal steps are typically performed in a batch mode because of lack of appropriate alternatives. Therefore, differences in waiting times are created for each individual substrate between a wet processing step, performed in a batch mode and another processing step, performed in a single substrate mode. Such variability is undesirable with regard to process control. Moreover this mixed batch and single substrate processing increases the cycle time, which is also undesirable. Therefore, there is a general interest in the development of competitive single substrate wet processing steps. Particularly, one of the major challenges regarding single wafer wet processing is a method for removing a liquid from both sides of a substrate. There are two major requirements to be fulfilled for such a method. At first the method should work sufficiently fast. Knowing that in state of the art production lines a substrate is processed typically every 2 to 3 minutes, ideally, in order to avoid equipment duplication, the process step and the liquid removal step should be completed in about such a time frame. Another requirement is related to the preferred substrate orientation. State of the art processing equipment and transportation tools are developed to handle substrates in a horizontal position. Therefore in order to avoid additional substrate handling it would be desirable to perform the wet processing steps using horizontally positioned substrates.
In the European Patent EP 0 385 536 B1, a method is disclosed of drying substrates after treatment in a liquid by pulling said substrate slowly out of said liquid. However, this known method, which is based on the Marangoni principle, requires that the substrates are pulled out of the liquid in an upright position, i.e. a surface of said substrate is about perpendicular to the surface of the liquid bath as can be seen in FIGS. 1 to 6 of the European Patent EP 0 385 536 B1. This handling is incompatible with the majority of the other process steps where the equipment and transportation tools are developed to handle horizontal positioned substrates.
In the U.S. Pat. No. 5,271,774 a spin-drying technique is disclosed which is able to handle horizontal positioned substrates. In fact several small liquid islands are formed being removed from the substrate by a rotary movement. It is known that such a spin-drying technique leaves undesirable residues, often referred to as drying marks, on the substrate surface, particularly on surfaces having mixed hydrophilic and hydrophobic regions.
In the U.S. Pat. No. 5,660,642 a liquid removal technique is disclosed wherein a liquid film present on a surface of a substrate can be removed by applying rinsewater together with a surface tension reducing vapor. Particularly, a disadvantage is that regardless of the precise nature of the liquid, during the liquid removal process always rinsewater is supplied. Furthermore, the surface tension reducing vapor is passively applied, e.g. by natural evaporation, which makes it difficult to locally, i.e. at moving zone, have a good and efficient control on the vapor supply or to direct the vapor. Moreover U.S. Pat. No. 5,660,642 does not disclose how to remove a liquid film substantially simultaneously from two opposite surfaces, i.e. top and bottomside, of a horizontally positioned substrate. Neither does U.S. Pat. No. 5,660,642 disclose how to remove efficiently a liquid from the topside of a horizontally positioned substrate.
In an aspect of the invention a method of removing a liquid from at least one surface of at least one substrate is disclosed, said method comprising the steps of:
supplying a liquid on at least a part of said surface of said substrate;
supplying a gaseous substance to said surface of said substrate, said gaseous substance being at least partially miscible with said liquid and when mixed with said liquid yielding a mixture having a surface tension being lower than that of said liquid; and
subjecting said substrate to a rotary movement. Said gaseous substance can comprise a vaporised substance which is miscible with said liquid and when mixed with said liquid yields a mixture having a surface tension being lower than that of said liquid. Said gaseous substance can comprise a gas which is miscible with said liquid and when mixed with said liquid yields a mixture having a surface tension being lower than that of said liquid. Said gaseous substance can comprise a mixture of a vaporised substance and a gas, like e.g. helium, argon or nitrogen, said mixture being at least partially miscible with said liquid and when mixed with said liquid yielding a mixture having a surface tension being lower than that of said liquid. Particularly, by supplying said liquid and said gaseous substance on said surface of said substrate, at least locally a sharply defined boundary is created between the liquid and the gaseous substance, i.e. a so-called liquid-vapor boundary.
In an embodiment of the invention, said rotary movement is performed at a speed to guide said liquid-vapor boundary over said substrate. Preferably this boundary is a curved boundary. The configuration is such that the liquid is kept at the outerside of the curved boundary, i.e. at the liquid side of the liquid-vapor boundary. In an embodiment of the invention the substrate can spin around its own axis. Alternatively said substrate can also be subjected to a rotary movement where said substrate no longer spins around its own centre.
In another embodiment of the invention, a method of removing a liquid from at least one surface of at least one substrate is disclosed, comprising the steps of:
subjecting said substrate to a rotary movement
supplying a liquid to at least a part of said surface of said substrate; and
supplying a gaseous substance to said surface of said substrate while supplying said liquid, said gaseous substance being at least partially miscible with said liquid and when mixed with said liquid yielding a mixture having a surface tension being lower than that of said liquid. Particularly on at least a part of the surface of the substrate, fresh liquid is sprayed continuously. The entire surface at the liquid side of the liquid-vapor boundary can be covered, as e.g. for hydrophilic surfaces, with a continuous film of the liquid. The speed of the rotary movement is chosen such that the flow of said sprayed liquid on at least one side of the wafer is transported outwards due to the centrifugal forces. Moreover, said gaseous substance, when mixed with said liquid yields a mixture having a surface tension being lower than that of said liquid. The resulting surface tension reduction of said liquid facilitates the movement of said liquid towards an edge of the substrate. The surface left behind is cleaned and dried. It is presumed that this drying action is obtained according to at least the combination of the rotary movement and the Marangoni effect. According to the Marangoni effect said substances will be mixed with the liquid such that in the liquid meniscus, its concentration decreases in the direction of the liquid. This gradient in concentration creates an additional force exerted on the liquid film in the direction of the liquid film resulting in a good drying performance.
The liquid is selected dependent upon the applied wet processing step like e.g. a wet etching step or a cleaning step or a rinsing step. To initiate the drying process, besides said liquid also a gaseous substance reducing the surface tension of said liquid is sprayed on at least one surface of said substrate. Particularly, a pressurized gaseous substance is actively supplied e.g. by using at least one nozzle, said nozzle preferably being movable. Alternatively, instead of a movable nozzle, at least one static inlet can be used for supplying, preferably actively, said gaseous substance on said surface of said substrate. Said surface tension reducing gaseous substance can be isopropyl alcohol (IPA), but also any other gaseous substance which is miscible with said liquid and which will form a mixture with said liquid having a surface tension lower than that of said liquid alone, can be used. Particularly, said gaseous substance may be heated at a temperature typically in the range between 20 and 100 degrees Celsius.
In another embodiment of the invention, eventually prior to the liquid removal step an etching, a cleaning or a rinsing liquid or a sequence of such liquids can be supplied to the entire surface of a rotating substrate. Particularly prior to the liquid removal step of the present invention, a liquid comprising water, ozone and an additive acting as a scavenger can be dispensed on a surface of a rotating substrate in order to remove organic contaminants from said surface. Preferably said liquid is maintained at a temperature below the boiling point of said liquid. The parameters can be optimized such that a liquid film can completely cover a surface. The spinning motion will quickly transport the liquid over the surface towards the edge, thus allowing relatively short carry-over transients and thus also allowing for relatively short rinsing times. Using such a continuously switched flow of liquids eliminates the undesirable passage of liquid-gas interfaces over the surface. The liquid removal method of the present invention is applicable for each sequence of at least one wet processing step by supplying a surface tension reducing gaseous substance together with the liquid. The drying can thus be applied directly on the processing liquid if relevant for the application. Since the proposed drying technique is found to be very fast, process non-uniformity over the surface can be kept very low.
In another embodiment of the invention, eventually prior to the liquid removal process of the present invention, a gas mixture comprising water vapor, ozone and an additive acting as a scavenger can be supplied on a surface of a substrate in order to remove the organic contaminants from said surface. This action is usually followed by a wet processing step, i.e. a rinsing step.
In another embodiment of the invention, another force can be combined with the liquid removal process of the present invention. Particularly, by using megasonic energy as said other force to agitate the liquid applied during the removal process the cleaning performance of said liquid removal process can be enhanced. Doing so can help in particle reduction. Alternatively also contacting a surface with a rotating cleaning pad is an example of such other force.
In an aspect of the invention an apparatus for removing a liquid from at least one surface of at least one substrate is disclosed, said apparatus comprising:
a substrate holder which is subjectable to a rotary movement, said substrate being releasably held by said substrate holder;
a liquid supply system for applying a liquid on at least part of said surface of said substrate;
a gaseous substance supply system for applying a gaseous substance on said surface of said substrate. Preferably, said gaseous substance supply system and said liquid supply system are positioned such that said gaseous substance is applied closer to the centre of said rotary movement of said substrate holder than said liquid. Particularly said liquid supply system is movable relative to said substrate holder.
In an embodiment of the invention, said apparatus further comprises a chamber, preferably pressurizable, wherein said substrate holder is positioned. This chamber is designed in a manner to avoid back splashing of the liquid removed from a surface onto said surface. For instance, a chamber having slanted walls may be used. Particularly, the substrate holder may be positioned horizontally in said chamber. In such case, preferably the vertical walls of said chamber are oriented such that the angle between said walls and the horizontally positioned substrate holder is smaller than 90 degrees in order to prevent back splashing of the liquid which is removed according to the method of the present invention.
In another embodiment of the invention, said apparatus further comprises a generator of megasonic energy and a transmitter for transmitting said megasonic energy to a surface of the substrate via the liquid being supplied at said surface.
In another embodiment of the invention, the gaseous substance supply system can comprise at least one nozzle for applying said gaseous substance on said surface of said substrate and said liquid supply system can comprise at least one nozzle for applying said liquid on said surface of said substrate, said nozzles are positioned such that said gaseous substance is actively applied closer to the centre of the rotary movement of the substrate holder than said liquid. Particularly, at least locally a sharply defined liquid-vapor boundary can be created which is located inbetween a first and a second adjacent nozzle, said first nozzle being part of said gaseous substance supply system, said second nozzle being part of said liquid supply system. Further according to the apparatus of the invention, said nozzles can be mounted on an arm, said nozzles being movable on said arm and/or said arm being movable relative to said substrate holder.
In another embodiment of the invention, the gaseous substance supply system comprises at least one static inlet for applying said gaseous substance on said surface of said substrate and the liquid supply system comprises at least one nozzle for applying said liquid on said surface of said substrate. Particularly, at least locally, a sharply defined liquid-vapor boundary can be created being located between the rotation centre and the liquid supply nozzle being located at the shortest radial distance from the rotation centre. Further according to the apparatus of the invention, said liquid nozzles can be mounted on an arm, said nozzles being movable on said arm and/or said arm being movable relative to said substrate.

Method and apparatus for removing a liquid from a surface of a rotating substrate

Interuniversitair Microelektronics Centrum (IMEC)


Provided is a method for capturing a video. The method includes the following steps: a video captured instruction is acquired, and video capturing is performed on a target scenario until a video captured pause instruction is acquired, so as to obtain a video segment captured between the video captured instruction and the video captured pause instruction; it is determined whether a video generation instruction is acquired; if the video generation instruction is not acquired, the video captured instruction and the video captured pause instruction are acquired repeatedly to obtain corresponding video segments until the video generation instruction is acquired; and based on the video generation instruction, a target video is generated according to the obtained video segments. Further provided are an apparatus for capturing a video, a terminal device and a storage medium.

A current method for capturing a video is usually that a complete video is obtained by one-time capturing. If the video is desired to be spliced or clipped, the video needs to be processed by dedicated video processing software.
However, for the use of the video processing software, in one aspect, a video processing personnel is required to master the use skills of the video processing software, and in another aspect, a terminal device is required to be installed with the video processing software and have a system running environment of this software. Moreover, the export and import of the video are also involved. Therefore, the technical threshold in the operations is high, which is not conducive to the daily use of a user and affects the user experience.

Method and apparatus for capturing a video, terminal device and storage medium

Beijing Microlive Vision Technology Co., Ltd.


A mass spectrometer capable of measuring under switching two ion sources at different pressure levels in which a sample gas separated by GC column is branched, and separately introduced to a first ion source (for example, APCI ion source) and a second ion source (for example, EI ion source) at a pressure level lower than that of the first ion source respectively. Preferably, the flow rate of the sample gas introduced to the APCI ion source is made more than the flow rate of the sample gas introduced to the EI ion source, so that the pressure for each of the ion sources can be maintained and analysis can be conducted by each ionization at a good balance in view of the sensitivity.

In the specification, relevant terms used are abbreviated for gas chromatography as GC, liquid chromatography as LC, mass spectrometer as MS, apparatus combining gas chromatography and mass spectrometer as GC/MS, atmospheric pressure chemical ionization as APCI, chemical ionization as CI, electron impact as EI, and electro-spray ionization as ESI, respectively.
GC/MS is a well known analysis technology. APCI/MS is an apparatus for ionizing and detecting micro-amount of ingredients in a mixed sample at high sensitivity by using ion-molecular reaction, which is utilized for the analysis of micro-ingredients in environmental samples and bio-samples. JP-A No. 9-15207 discloses an analyzer at high sensitivity combining GC and APCI/MS for conducting analysis of various kinds of micro-impurities containing special gases for use in semiconductor production. In the apparatus, a sample gas separated by the column of GC is introduced in admixture with a carrier gas by way of a line to an APCI source and analyzed. JP-A No. 11-307041 discloses an apparatus in which a first ionization chamber for CI, a second ionization chamber for EI, and a mass analysis part are serially in adjacent with each other, and a passage port for passing ions is disposed between each of the ion sources. The sample gas enters the first ionization chamber and is introduced through the passage port into the second ionization chamber. During CI operation, the sample gas is ionized in a state of stopping the EI operation. During EI operation, the sample gas is ionized in a state of stopping the CI operation, and the introduced samples are analyzed by switching the two ion sources. JP-A No. 2000-357488 discloses an apparatus of separating ingredients flown out of LC by a branching tee and delivering the same to two ion sources of ESI and APCI. By switching the ion sources, they can be analyzed by two ionization methods. Further, JP-A No. 2001-93461 discloses a constitution of improving the sensitivity by making the gas flow different from the ion moving direction in APCI ionization by corona discharge using a needle electrode.


A method and a system for providing a typing practice to users are disclosed. The method includes displaying a portion of a story on a User Interface (UI) in an electronic device. The portion of the story comprises a plurality of displayed words, where each displayed word comprises one or more displayed characters. The method includes enabling a user to provide typing input, where the typing input comprises one or more input characters for each displayed word of the plurality of displayed words in a sequential manner. The method includes checking whether input character matches to corresponding displayed character of the portion of the story. The method further includes provisioning an animated graphics in the UI upon detection of match between the input character and corresponding displayed character and precluding the provisioning of the animated graphics in the UI upon detection of mismatch between input character and corresponding displayed character.

With rapid improvements in computer technology, people across the globe have embraced necessary skills for using computers or similar devices. The importance of computer skills is at an all-time high and specifically touch-typing has become an ever-increasing attribute requisite from any existing staff or a prospective candidate for working with computer systems. Touch-typing is basically an art of knowing how to type without relying on your sense of sight. Specifically, a touch typist will know the location of specific keys on the keyboard through muscle memory. Touch-typing enables a user to write (type) without exercising caution about how the user is writing, thereby allowing the user to focus on what idea that is explicitly expressed via writing.
Touch-typing is a skill that users learn by continuous exercise and repetition. Continuous exercise and repetition ensure that the users build muscle memory. If the tool that users/touch typists are using is not engaging and dull, they will quickly lose interest and boredom may kick in.
In light of the above discussion, there appears to be a need for a touch-typing tool that can keep the users engaged and prevent the users from boredom and entices them to continue practicing their typing skills.

Methods and systems for providing typing practice to users


A method of forming an SPVG SONOS memory. First, a substrate having a well and a plurality of select gate structures is provided. Then, a plurality of sacrificial spacers are formed alongside each select gate structure, and an implantation process is performed to form a doped region in the well between any two adjacent select gate structures. Afterward, the sacrificial spacers are removed, and a composite dielectric layer is formed on the select gate structures and the substrate. Finally, a plurality of word lines are formed on the composite dielectric layer.

1. Field of the Invention
The present invention relates to a method of forming a nonvolatile memory, and more particularly, to a method of forming an SPVG SONOS memory.
2. Description of the Prior Art
Nonvolatile memories have the advantages of maintaining stored data while the power supply is interrupted, and thus have been widely employed in recent years. According to the bit numbers stored by a single memory cell, nonvolatile memories are divided into single-bit storage nonvolatile memories, including nitride-based non-volatile memories such as Nitride Read-Only-Memory (NROM), Metal-Oxide-Nitride-Oxide-Silicon (MONOS) memories or Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) memories, and dual-bit storage nonvolatile memories, such as split program virtual ground SONOS (SPVG SONOS) memories, and SPVG MONOS memories. Comparing to the traditional single-bit storage memories, the SPVG SONOS memories and SPVG MONOS memories are capable of storing more data, and thus have gradually become more and more popular in the memory device market.
Please refer to FIG. 1 and FIG. 2. FIG. 1 and FIG. 2 are schematic diagrams of an SPVG SONOS memory 10, where FIG. 1 illustrates the SPVG SONOS memory 10 during a programming operation, and FIG. 2 illustrates the SPVG SONOS memory 10 during an erasing operation. It is appreciated that only a single memory cell is illustrated in FIG. 1 and FIG. 2 for clearly demonstrating the structure and operational theorem of the SPVG SONOS memory 10. As shown in FIG. 1, the SPVG SONOS memory 10 is formed on a P well 12, which includes a select gate 14, and two N buried bit lines, respectively serving as a source 16 and a drain 18, positioned on the opposite sides of the P well 12. The SPVG SONOS memory 10 further includes a gate insulating layer 20 between the select gate 14 and the P well 12, and a cap layer 22 above the select gate 14. In addition, the SPVG SONOS memory 10 further includes a bottom silicon oxide layer 24, a silicon nitride layer 26, and a top silicon oxide layer 28 on the select gate 14 and the P well 12. The silicon nitride layer 26 works as a storage medium for trapping electrons or hot holes. Furthermore, the SPVG SONOS memory 10 has a word line 30 positioned on the top silicon oxide layer 28.
As shown in FIG. 1, the SPVG SONOS memory 10 is programmed by a source-side injection mechanism. The voltage operations are as follows: the world line 30 is applied with a high positive voltage (e.g. 6 to 9V); the select gate 14 is applied with a low positive voltage (e.g. 1V); the source 18 is applied with a positive voltage (e.g. 4.5V); and the P well 12 and the drain 16 are maintained at 0V. Under these voltage operations, electrons which traverse the channel underneath the select gate 14 will be captured and trapped in the silicon nitride layer 26 close to the source 18 (as the arrow marks shown in FIG. 1) to store a bit of data. In addition, under similar inverse voltage operations, electrons can be trapped in the silicon nitride layer 26 close to the drain 16 to store another bit of data.
As shown in FIG. 2, the SPVG SONOS memory 10 is erased by a band-to-band hot hole injection mechanism. The voltage operations are as follows: the world line 30 is applied with a high negative voltage (e.g. −6 to −9V); the source 18 is applied with a positive voltage (e.g. 4.5V); the select gate 14 is maintained at a level lower than the threshold voltage, and the P well 12 and the drain 16 are maintained at 0V. Under these voltage operations, hot holes in the P well 12 will inject to the silicon nitride layer 26 close to the source 18, and neutralize the electrons trapped in the silicon nitride layer 26. Similarly, the electrons trapped in the silicon nitride layer 26 close to the drain 16 can be neutralized under similar inverse voltage operations.
Please refer to FIG. 3 to FIG. 6. FIG. 3 to FIG. 6 are schematic diagrams illustrating a conventional method of forming an SPVG SONOS memory. For easy illustration, only parts of memory cells are shown. As shown in FIG. 3, a substrate 50 including a P well 52 is formed, and a plurality of select gate structures 54 are positioned on the P well 52. Each select gate structure 54 from bottom to top includes a gate insulating layer 56, a select gate 58, and a cap layer 60. The gate insulating layer 56 is a silicon oxide layer formed by a thermal oxidization process or a deposition process, the select gate 58 is a polysilicon layer, and the cap layer 60 is a silicon nitride layer or a polycide.
As shown in FIG. 4, a composite dielectric layer (ONO tri-layer dielectric) 62 including a bottom silicon oxide layer 64, a silicon nitride layer 66, and a top silicon oxide layer 68 are formed on the substrate 50 and the select gate structures 54. Thereafter, a silicon oxide layer 70 is deposited as sacrificial spacers to be formed later.
As shown in FIG. 5, an etching back process is performed to entirely etch back the silicon oxide layer 70 for forming sacrificial spacers 72 alongside each select gate structure 54. The etching back process is not stopped until the composite dielectric layer 62 is open so as to form an opening 74 between any two adjacent sacrificial spacers 72. Thereafter, an implantation process is performed to form a plurality of N doped regions 76, which serve as buried bit lines, in the P well 52 via the openings 74. Afterward, an insulating layer (not shown) is entirely deposited on the top silicon oxide layer 68 and on the N doped regions 76, and an etching back process is performed to form a blocking film 78 on each N doped region 76.
As shown in FIG. 6, an etching process is then performed to remove the sacrificial spacers 72. A polysilicon layer 80 is totally deposited, and a photolithography and etching process is performed to define word lines 80.
As described, the process for forming the N doped regions 76 is performed after forming the composite dielectric layer 62 according to the conventional method. In other words, the composite dielectric layer 62 between any two adjacent sacrificial spacers 72 must be removed before forming the N doped regions 76. In addition, the blocking film 78 has to be formed before forming the word lines 80, or alternatively another silicon oxide layer (not shown) has to be formed after removing the sacrificial spacers 72 to avoid short circuits between the word lines 80 and the N doped regions (buried bit lines) 76. It is appreciated that even though the short circuit problem is avoided by forming the blocking film 78, other factors, such as the incompletion of the composite dielectric layer 62, the remaining etching stress, and the etching infirmity, may cause damages to the SPVG SONOS memory. For example, a higher voltage difference between the word lines and the buried bit lines may be necessary when performing the erasing operation, or a current leakage problem may occur. This leads to tunneling between the word lines and the buried bit lines, and reduces the reliability of SPVG SONOS memory.

Method of forming a split programming virtual ground SONOS memory


A method for shielding a metal substrate surface during the application of heat to the surroundings of the substrate which comprises. A liquid maskant composition is formed which comprises: a) at least one of a polycarbonate urethane diacrylate oligomer, a polycarbonate urethane dimethacrylate oligomer, a polycarbonate caprolactone urethane diacrylate oligomer, or a polycarbonate caprolactone urethane dimethacrylate oligomer; b) a reactive diluent capable of free radical polymerization; and c) a photoinitiator capable of generating free radicals when exposed to actinic radiation. The maskant composition is applied onto a surface of the substrate. The maskant composition is then exposed to sufficient actinic radiation to polymerize or crosslink the composition into a dried maskant. In use the dried maskant is heated on the substrate to a temperature of from about 400° F. to about 600° F. for from about 20 minutes to about 30 minutes, and then the maskant is removed.

Technical Field
This invention relates to temporary maskants curable by actinic radiation for use in protecting metal substrates during grit blasting and plasma spray processing. The invention relates to a formulation capable of polymerization through exposure to actinic radiation that can be used to protect a metal substrate from high temperature and abrasive processing. These find use in the manufacture of such products as turbine blades, engine parts, circuit boards, one glass solution (OGS) and orthopedic replacement joints.
Description of the Related Art
The use of temporary radiation-curable masks in the processing of metal surfaces is well known. In many masking applications, two-part, solvent based or thermally cured maskants are impractical and uneconomical. Radiation curable masks can be applied easily and cured quickly using actinic radiation. U.S. Pat. No. 7,763,326 describes the process of applying and curing such a maskant in order to protect a metal surface during diffusion coating. These maskants provide sufficient protection of metal surfaces from processing such as anodizing, plating, and grit blasting, but cannot withstand the high temperatures of plasma spraying for extended periods of time. Current products use polymers having polyether, polyester or polybutadiene backbones which begin to deteriorate at high temperatures causing films to delaminate, blister, and break down.
U.S. Pat. No. 6,951,623 describes a method of protecting metal substrates from chemical exposure using a UV curable maskant. U.S. Pat. No. 5,420,171 is based on a maskant for protecting surface during soldering processes. The maskant is within a temperature of 510° F. for two second during soldering processing and then the film is removed by dissolving in water at a temperature of 120°-140° F. One must use a high temperature resistant tape in order to protect metal surfaces from processing at temperatures produced by plasma spray. Such a tape is described in U.S. Pat. No. 5,508,097. This taping process is manual and may take several hours to complete for each separate part. Tape delaminates during processes such as shot peening or grit blasting. This invention provides a maskant product that can be utilized to protect a metal substrate from both grit blasting and plasma spraying. The composition can be applied and cured within minutes, increasing efficiency and throughput. The mask can then be removed by either peeling or burning off at temperatures greater than 600° F. without leaving any substantial amount of residue. The invention provides a temporary maskant composition that includes a) a urethane (meth)acrylate oligomer having a polycarbonate or polycarbonate caprolactone backbone; b) a reactive diluent monomer capable of polymerization; c) a photoinitiator; d) an optional thickener and e) other optional additives. These compositions are applied to a surface that is to be protected, for example, a surface that has to be protected from grit blasting and/or plasma spray. Thereafter, these compositions are cured by exposing them to actinic radiation. These maskants find use as surface protectants in industrial processes such as acid stripping, anodizing, plating, chemical milling, grit blasting, shot peening, vibratory finishing, air plasma spraying, painting and powder coating. However, they find most particular use in protecting metal surfaces from high temperature treatments for extended periods of time while retaining their removability. The maskant must then be able to withstand temperatures of up to about 600° F. for up to about 30 minutes without delaminating from the metal substrate and still retain enough flexibility and tensile strength such that it would be peelable for removal. After processing, the maskant can be removed by peeling or burning off at temperatures greater than 600° F.

High temperature resistance, radiation curable maskant for metal substrates


The present invention relates to hydrous, liquid, paste- or cream-like skin cleaning agents for the removal of strongly adhering soil, comprising anionic and/or amphoteric and/or non-ionogenic surfactants as washing-active substances, thickeners, at least one abrasive, and, optionally, adjuvants for the regulation of consistency, appearance, odor, and stability, such as pigments, fragrances, stabilizers, and preservatives, which skin cleaning agents are characterized by the fact that they comprise di-n-butyl adipate and/or diisopropyl adipate as the exclusive solvents. These agents are obtained by homogeneously mixing the components, optionally under heating of the mixture. If a C.sub.8 -C.sub.16 fatty alcohol which acts as consistency regulator is added, heating of the component mixture may be omitted. Besides, the addition of the fatty alcohol increases the detergent action. The present invention further relates to the use of these skin cleaning agents, with the cleaning agent being distributed on the skin without water or with a small amount of water first, and the cleaning procedure being continued and finished under rinsing with water.

FIELD OF THE INVENTION
The present invention relates to skin cleaning agents having an improved cleaning action and a gentle behavior to the skin. The present invention further relates to a process for their production and to the use of the agents as flowable hand cleaning agents and heavy-duty hand cleaning agents.

Skin cleaning agents, a process for their production and their use


A multilayered thermoplastic film having improved lap seal strength includes skin layers having blends of ethylene propylene copolymer with polybutylene or propylene butene copolymer, or propylene butene copolymer. Oriented shrink films can beneficially be made from three and five layer formulations including such skin layer compositions.

The present invention is directed to new and useful films, and especially heat shrinkable films. One distinguishing feature of a shrink film is the film's ability, upon exposure to a certain temperature, to shrink or, if restrained from shrinking, to generate shrink tension within the film.
The manufacture of shrink films, as is well known in the art, may be generally accomplished by extrusion of the resinous materials which have been heated to their flow or melting point from an extrusion die in tubular or planar form. After a post extrusion quenching to cool, the extrudate is then reheated to its orientation temperatures range. The orientation temperature range for a given film will vary with the different resinous polymers and blends thereof which comprise the film. However, the orientation temperature range may generally be stated to be above room temperature and below the melting point of the film.
The terms "oriented" or "orientation" are used herein to describe the process and resultant product characteristics obtained by stretching and immediately cooling a resinous polymeric material which has been heated to its orientation temperature range so as to revise the molecular configuration of the material by physical alignment of the molecules to improve mechanical properties of the film such as, for example, shrink tension and orientation release stress. Both of these properties may be measured in accordance with ASTM D 2838-69 (reapproved 1975). When the stretching force is applied in one direction uniaxial orientation results. When the stretching force is applied in two directions biaxial orientation results. Orientation is also herein used interchangeably with "heat shrinkability" with these terms designating a material which has been stretched and set by cooling at its stretched dimensions. An oriented (i.e., heat shrinkable) material will tend to return to its original unstretched dimensions when heated to an appropriate temperature below its melting temperature range.
The term "lap seal strength" is used herein to mean the strength of the film of the present invention when sealed to itself, primarily assisted only by the weight of the product which is being packaged. Typically, shrink tunnel heat is employed to create the lap seal. This is to be contrasted to "heat seal strength" referring typically to conventional heat seals created by the pressure of e.g. an impulse sealer. Typically, seal bar heat is employed to create the heat seal.
Returning to the basic process for manufacturing the film as discussed above, it can be seen that the film once extruded and initially quenched to cool is then reheated to its orientation temperature range and oriented. The stretching to orient may be accomplished in many ways such as, for example, by "blown bubble" techniques or "tenter framing". These terms are well known to those in the art and refer to orientation steps whereby the material is stretched in the cross or transverse direction (TD) and in the longitudinal or machine direction (MD). After being stretched, the film is rapidly cooled to quench and thus set or lock-in the oriented molecular configuration.
After locking-in the oriented molecular configuration the film may then be stored in rolls and utilized to tightly package a variety of items. In this regard, the product to be packaged its first enclosed in the heat shrinkable material by heat sealing the shrink film to itself where necessary. Thereafter, the enclosed product is subjected to elevated temperatures by, for example, passing the product through a hot air or hot water tunnel. This causes the film to shrink around the product (also inducing creation of the lap seal) to produce a tight wrapping that closely conforms to the contour of the product.
The above general outline for manufacturing films is not meant to be all inclusive since this process is well known to those in the art. For example, see U.S. Pat. Nos. 4,274,900; 4,229,241; 4,194,039; 4,188,443; 4,048,428; 3,821,182 and 3,022,543. The disclosures of these patents are hereby incorporated by reference.
Many variations on the above discussed general processing theme are available to those in the art depending upon the end use for which the film is to be put and the characteristics desired to be instilled in the film. For example, the molecules of the film may be cross-linked during processing to improve the films abuse resistance and other characteristics. Cross-linking and methods for cross-linking are well known in the art. Cross-linking may be accomplished by irradiating the film or, alternatively, may be accomplished chemically through the utilization of e.g. peroxides. Another possible processing variation is the application of a fine mist of silicone spray to the interior of the freshly extruded material to improve the further processability of the material.
In packaging applications involving the application of a heat seal to close a package, a film with high shrink tension can sometimes undergo seal failure or weakening during a subsequent heat shrinking step. Where the seal is a lap seal, e.g. an overlap of film typically on the underside of a package, seal failure can result in loss, damage, or contamination of the packaged product.
The inventor has discovered that the lap seal strength of certain packaging films can be significantly improved by using a blend of ethylene propylene copolymer and polybutylene in the outer layers of such films.
Alternatively, the lap seal strength of certain packaging films can be significantly improved by using a blend of ethylene propylene copolymer and propylene butene copolymer in the outer layers of such films.
Films having outer layers comprising propylene butene copolymer are also beneficial.


An originating node is configured for generating a route management signaling message having a signaling link selection (SLS) value that is selected by the originating node based on an affected destination value. The affected destination value, distinct from a destination point code (DPC) that specifies a destination node for the route management signaling message, identifies an affected signaling node that is affected by the route management signaling message. Hence, route management signaling messages related to the affected signaling node are routed along the same signaling path, ensuring that all the related route management signaling messages remain in sequence. Further, different signaling path can be established for respective affected signaling nodes, providing load sharing of route management signaling messages relative to the respective affected signaling nodes.

1. Field of the Invention
The present invention relates to routing a received Signaling System 7 (SS7) message in a Common Channel Interoffice Signaling (CCIS) network of an out-of-band telecommunications system.
2. Description of the Related Art
Common Channel Interoffice Signaling (CCIS) networks provide out of band signaling for telecommunications networks such as public switched telephone networks. Most of the signaling communications for telephone networks utilize Signaling System 7 (SS7) protocol. An exemplary SS7 compliant CCIS network includes Service Switching Points (SSPs) (i.e., an SS7 capable telephony switch), Signaling Transfer Points (STPs), and data links between the STPs and SSPs and various telephone switching offices of the network.
As recognized in the art, the hardware and software operations of the SS7 protocol are divided into "layers", similar to the Open Systems Interconnect (OSI) Network Model specified by the International Standards Organization (ISO). The "lowest levels" of the SS7 protocol include the Message Transfer Part (MTP) Level 1, Level 2, and Level 3. MTP Level 1 and Level 2 are equivalent to the OSI Physical Layer and the OSI Data Link layer, respectively. MTP Level 3, equivalent to the OSI Network Layer, provides message routing between signaling points in the SS7 network, and re-routes traffic away from failed links and signaling points and controls traffic when congestion occurs.
SS7 messages (also referred to as signal units) are routed throughout the SS7 network based on point codes specified within the SS7 message. In particular, each node of the signaling network is assigned a prescribed point code for purposes of addressing signaling messages throughout the SS7 network. The point code includes components that represent a network hierarchy based on the protocol being deployed.
One type of signal unit, known as a Message Signal Unit (MSU), includes a routing label which allows an originating signaling point to send information to a destination signaling point across the network. The routing label includes an originating point code (OPC) specifying the originating signaling node, a destination point code (DPC) specifying the destination for the SS7 messaging packet, and a signaling link selection (SLS) field. Hence, a signaling network node selects an available outgoing link based on information in the DPC and SLS.
The size of the point code may vary depending on protocol; for example, each North American point code according to the American National Standards Institute (ANSI) uses 24 bits, whereas each point code specified by the International Telecommunication Union (ITU) uses 14 bits. In particular, an ANSI point code specifies a network hierarchy based on network, cluster, and member octets (e.g., 245-16-0 decimal). An octet is an 8-bit (i.e., 1-byte) value which can contain any value between zero and 255. Telcos with large networks have unique network identifiers while smaller operators are assigned a unique cluster number within networks 1 through 4 (e.g., 1-123-9). Network number 0 is not used; network number 255 is reserved for future use.
ITU-T point codes are pure binary numbers which may be stated in terms of zone, area/network, and signaling point identification numbers. For example, the point code 5557 (decimal) may be stated as 2-182-5 (binary 010 10110110 101).
The ANSI standard allows for, and specifies in detail, a form of routing referred to as Cluster Routing. A "cluster route" is a route to a point code of which only the Network and Cluster portions have been specified, i.e., the first 16 bits. Hence, the cluster route enables one to specify a route to all members within that cluster.
As described above, a signaling network node selects an available outgoing link based on information in the DPC and SLS. The SLS value is assigned to each message by the originator of the message (i.e., the originating node). Intermediate routing nodes operate on the assigned SLS value to select an outbound link; hence, messages which contain the same SLS value are transmitted on the same link. The SLS value can be used for linkset selection only in the case that a combined linkset is used: a combined linkset consists of two or more linksets with the same priority to the same destination; if a combined linkset is not used, the SLS value is used only to select the link. In the event of a link failure, then link restoration, changeover, and change procedures are implemented to preserve message order while messages are moved to an alternate signaling link.
Concerns arise with respect to providing even distribution of signaling traffic between links within a linkset, and ensuring that management messages arrive at their specified destination in the proper sequence. For example, an originating node typically may generate random SLS values to enable load sharing of signaling traffic among different links of a linkset due to the random distribution of the SLS values among respective signaling messages; an alternative method of implementing load sharing is to use a round robin-type sequence, where SLS values are sequenced through the available range. However, a random or round robin distribution of SLS values cannot guarantee that signaling messages arrive in the appropriate sequence: a first signaling message (e.g., a Transfer Prohibit (TFP)) may be output by an originating node, followed by a second signaling message (e.g., a Transfer Allowed (TFA)); if the destination node first receives the TFA followed by the TFP, the destination node may improperly conclude that an affected node is available, requiring the signaling nodes to send additional signaling messages to resolve the actual states of the signaling nodes. Hence, the forwarding of user traffic may be delayed.
Hence, the originating node having two messages that need to arrive in sequence typically will insert a default SLS value in both messages to ensure that the two messages traverse the exact same path through the network, guarantee to arrive in sequence. This technique of using a default SLS value, however, creates unequal load distribution, since a given link may be required to carry data plus the management traffic. Hence, network resources utilization is not optimized.

Arrangement for controlling SS7 message routing by selecting a signaling link selection field based on an affected destination


A double-integration type A/D converter for performing A/D conversion by integrating an input voltage and a reference voltage is disclosed. The A/D converter includes an integrator configured to integrate the input voltage and the reference voltage; a first switch configured to relay supply of the input voltage to an input terminal of the integrator; a second switch configured to relay supply of the reference voltage to the input terminal; and a control circuit configured to control switching on and off the first switch and the second switch. The control circuit generates a switching signal that switches on and off the first switch and the second switch individually and a switching signal that switches on and off the first switch and the second switch simultaneously. In addition, superimposition of the input voltage and the reference voltage is integrated when the first switch and the second switch are simultaneously switched on.

A double-integration type A/D converter performs A/D conversion by integrating an input voltage for a specified time, integrating a reference voltage whose polarity is opposite to that of the input voltage, and counting the time it takes for an output of an integration circuit to reach a predetermined level.
A conventional technology employs a double-integration type A/D converter which eliminates a zero point error by an offset voltage of an integrator using an operational amplifier. In this type of an A/D converter, integration is performed twice in the same integrator in order to eliminate the zero point error by the offset voltage of the integrator.
Another conventional technology uses an A/D converter in which current having a polarity opposite to that of an input voltage is discharged by a constant current circuit connected to an input side of an integrator during an input voltage integration period or a reference voltage integration period. Thus, this technology may achieve reduction of cost by reduction of A/D conversion time and reduction of the number of bits of a counter circuit.
A still yet another conventional technology adopts an integral type A/D converter which converts an output voltage of a detection circuit such as a bridge circuit for measurement of distortion (e.g., Wheatstone bridge circuit) or the like into digital data. Thus, this technology may achieve fast A/D conversion processing while appropriately eliminating unnecessary components including hum components caused by AC power.


A dissolution tester comprising: a constant-temperature-water tank; a vessel for introducing a dissolution test liquid; a vessel lid having a suction hole for sucking up the test liquid; a suction nozzle which can move up and down together with the nozzle holder; and an administration mechanism for automatically administering a sample for conducting a dissolution test into the vessel; the administration mechanism comprises an administration hole provided at the vessel lid; a sample receiver provided at the vessel lid, for holding the sample at the vessel lid when the administration hole is closed; and a manipulator rod which can move up and down together with the nozzle holder, for opening the administration hole by making contact with the sample receiver such that the sample on the sample receiver is made to fall into the vessel via the administration hole, when carrying out administration.

1. Field of the Invention
The present invention relates to dissolution testers, and more particularly, to an improved stabilizing mechanism therefor.
2. Prior Art
Conventionally, in order to ensure consistent quality of drug samples, dissolution tests are conducted to test the dissolution of compounds of interest from those samples.
Various different kinds of dissolution testers have been developed for conducting such tests. For example, one such dissolution tester in the related art is the device described in Japanese Unexamined Patent Application Publication No. 2000-283977.
Dissolution testers generally include a vessel, a paddle (or a rotating basket), a rotary shaft, an electric motor, and a constant-temperature-water tank.
In a dissolution test, a typical sequence of operations carried out with the dissolution tester is as follows. A fixed amount of test liquid is placed in the vessel and the temperature of the test liquid in the vessel is maintained at 37±5° C. Then, after immersing a sample to the center at the bottom of the vessel, the paddle is rotated at a specified position. The test liquid is then collected from the vessel after a specified period of time; this is known as the sample solution. The compounds of interest in the sample solution are then measured using a specified method, and a dissolution rate corresponding to the indicated amount is obtained.
It is essential to ensure stability of the dissolution test.
However, in dissolution testers using conventional techniques, it is difficult to further stabilize the dissolution test. In addition, the factors preventing further stabilization of the dissolution test with the conventional techniques are not well known.


The present invention relates to a core-shell polymer which is useful for polyoxymethylene resin, a polyoxymethylene resin composition containing the core-shell polymer and a molded article made of the polyoxymethylene resin.. The core-shell polymer is produced by an emulsion polymerization reaction using an oligomeric surfactant and a neutral radicals-liberating polymerization initiator.. This core-shell polymer makes the molded article be improved on the impact strength, elongation at the weld line, weatherability, thermal stability, etc., and the molded articles is used as various products.

Polyoxymethylene (POM) resin has been employed as a molding material in the manufacture of various parts such as gears, reels, cord clips, etc. but because these moldings are not good enough in impact strength, many attempts have been made to improve POM resin in this quality parameter.
However, because of the very structure of POM resin, no blending resin is available that is sufficiently compatible with POM resin.
Furthermore, because of the high crystallinity of POM resin, any improvement in its physical properties that may be obtained by alloying with other resins compromises its weld strength and elongation.
Moreover, because of its inadequate thermal stability, POM resin is not suited for high-temperature blending.
Heretofore a number of core-shell polymers have been proposed for melt-blending for the purpose of improving the impact strength of matrix resins. Any core-shell polymer consisting of a rubbery elastomer core and a glassy polymer shell, in particular, has the advantage of greater reproducibility of dispersion uniformity because the state of its dispersion in a matrix resin is less susceptible to the influence of melt-blending conditions.
Such core-shell polymers have heretofore been used as impact modifier for a variety of matrix resins such as polycarbonate, poly(butylene terephthalate), polyamide, poly(phenylene oxide), etc. as well as various alloys thereof.
However, the core-shell polymers heretofore available contain ingredients that encourage thermal degradation of POM resin. Therefore, these known core-shell polymers can hardly be even blended with POM resin. If they could be blended, the resulting compositions would be inadequate in thermal stability.
A POM resin composition with improved impact strength is disclosed in U.S. Pat. No. 4,804,716, for instance. This is a POM resin composition forming thermoplastic IPN (interpenetrated polymer networks) with a polyurethane elastomer but has many disadvantages. Thus, in order to obtain a sufficiently high impact strength, it is necessary to use the polyurethane elastomer in a fairly large proportion so that the modulus of elasticity is markedly sacrificed. Moreover, it is impossible to obtain a composition having satisfactory thermal stability, weatherability, fluidity and weld strength and elongation characteristics.
European Patent Laid-open Publication No. 115,373 discloses a POM resin composition containing a rubbery elastomer prepared by emulsion-polymerization of C.sub.1-8 alkyl acrylates. However, the production of this composition requires special blending conditions and if the ordinary blending conditions are used, a sufficiently stable POM resin composition cannot be obtained. Moreover, no ingenuity has been exercised in regard to thermal stability in the emulsion polymerization stage.
U.S. Pat. No. 4,713,414 discloses a POM resin composition containing a core-shell polymer and a reactive titanate. However, even with this core-shell polymer, the POM resin composition is unstable, undergoing decomposition.
Particularly the core-shell polymer used in the examples described in U.S. Pat. No. 4,713,414 and EP-A-115,373 is deficient in thermal stability (Comparative Example 1 of this specification).
Disclosed in U.S. Pat. No. 4,639,488 is a POM resin composition containing a rubbery elastomer obtained by emulsion polymerization of butadiene but here is no exercise of ingenuity in the emulsion polymer, either, and the thermal stability of this composition is poor.
U.S. Pat. No. 3,749,755 discloses a POM resin composition containing a rubbery elastomer but its thermal stability is unsatisfactory.
Japanese Patent Examined No. 15331/1984 discloses a method for producing a thermoplastic resin like acrylonitrile-acrylate-styrene (AAS resin) using emulsion polymerization technique improved on impact strength. This is, however, copolymer not a blend mixture.
It is generally acknowledged that a polymer blend composed of crystalline polymers is insufficient in the strength and elongation of welds. For example, a POM resin composition containing a poly urethane elastomer as a blending resin for improved impact strength is markedly compromised in weld strength and elongation.
Moreover, among engineering plastics, POM resin does not necessarily rank high in weatherability. When blended with a poly urethane elastomer for improved impact strength, POM resin provides only a composition markedly compromised in weatherability.
In the above state of the art, therefore, development of an impact modifier which, in a POM resin composition, provides sufficient impact strength and insures sufficient weld strength and elongation as well as improved thermal stability has been keenly demanded.
Moreover, POM resin is particularly poor in weatherability among various engineering plastics. This parameter has not been overtly improved by the prior art mentioned above and, therefore, development of a POM resin composition improved not only in impact strength but also in weatherability has been demanded.
The inventors of the present invention explored this field of art to develop a core-shell polymer capable of providing an improved POM resin composition and found that the surfactant and polymerization initiator used in the preparation of the core-shell polymer has had adverse effects on the thermal stability of POM resin. Based on this finding, attempts were made to improve the weld strength and elongation and weatherability of POM resin, and it was ultimately discovered that the above-mentioned problems can be solved all at once by melt-blending a core-shell polymer of the construction described hereinafter. The present invention is predicated on the above findings.


feeding mechanism, an expanding mechanism, a folding mechanism for folding front and rear parts of a bottom of a cardboard box, a folding mechanism for folding left and right parts of a bottom of a cardboard box, and a conveying mechanism; the feeding mechanism has a holding space, in which flattened boxes are received; the expanding mechanism includes a horizontally moving member, an expanding arm pivoted to the horizontally moving member, and several suction elements; a cardboard box will be expanded when the horizontally moving member moves with the suction elements applying suction on the box to fix the box thereto, and with the expanding arm pivoting 90 degrees; after a cardboard box has been expanded, the folding mechanisms function one after the other to fold front and rear parts and left and right parts of a bottom of the box.

1. Field of the Invention
The present invention relates to an apparatus for expanding and folding cardboard boxes, more particularly one, which includes a feeding mechanism, a box expanding mechanism, a folding mechanism for folding front and rear parts of a bottom of a cardboard box, a folding mechanism for folding left and right parts of a bottom of a cardboard box, and a conveying mechanism, and which can expand and fold a cardboard box rapidly in a few consecutive actions.
2. Brief Description of the Prior Art
Cardboard boxes are convenient to use because they are light in weight, inexpensive and recyclable, and come in a wide variety of sizes. Cardboard boxes are made of cardboards, which have been cut, formed with folds, which are between every two adjacent ones of four sides and between a bottom and the four sides as well as between a cover and the four sides, and connected at two vertical edges thereof so as to have a loop-shape. The cardboard boxes have a flattened shape in storage, and have to be expanded, and folded and sealed at the bottom so as to be ready for use.
Manufacturers usually use automatic apparatuses to expand, fold, and seal cardboard boxes in order to save labor and time. However, there's still room for improvement when it comes to the working speed of cardboard box expanding and folding apparatuses.

Apparatus for rapidly expanding and folding cardboard boxes


An image rendering method for masking a visual defect is disclosed. In an embodiment, the method includes determining a location of the visual defect, identifying a plurality of sub-pixels neighboring the visual defect and utilizing contrast sensitivity functions and visual masking characteristics of a human visual system to optimize adjustments to the plurality of neighboring sub-pixels to mask the visual defect.

Large displays are becoming more prevalent throughout society, from high-definition television to digital advertising applications. As the number of pixels in a display increases, the probability of producing a completely defect-free display typically drops. For most display applications, the current approach is to classify completed displays into quality categories based on the number of pixel and sub-pixel defects.
A consumer's discovery that a newly purchased display has 'defects' often leads to significant dissatisfaction. In advertising or public information applications, display defects may actually produce a negative impression in viewers of the display. In some critical industrial applications (e.g. medical imaging) defect-free displays are required to ensure accuracy of the information displayed or in other cases display defect locations can be visually flagged for display users. Consequently, this is a particularly challenging problem for display manufacturers.

Hewlett-Packard Development Company, L.P.


Apparatus for collecting waste cleaning fluid and debris resulting from a cleaning operation of a wall-mounted air handler assembly of a mini-split air conditioner. The apparatus is installed by placing and supporting a funnel-shaped collection bib under the air handler assembly by means of device-mounting brackets and a deflector plate inserted between the air handler assembly and the wall, the bib being held open by an arcuate rib attached to the mounting brackets and by a supporting cord passing through the rib, brackets, and bib hem and being cinched against the device.

The present invention is directed to the art of cleaning the indoor heat exchangers of air conditioning units, and in particular to disposal of water and cleaner fluids used, and debris removed, in the course of cleaning the units. Air conditioning units with which the invention is used, known generally in the art as "mini-split" systems, typically provide heated or cooled air for a specific and limited interior living space such as a single room. Mini-split air conditioners typically produce 9,000 to 36,000 Btu (9,500-38,000 kJ) per hour of cooling.
An air conditioner system operates on the principle of adiabatic compression and rarefaction of a coolant medium, the principles of which were recognized and patented by Dr. John Gorrie in U.S. Pat. No. 8080, issued May 6, 1851. In a so-called "hot side" of the system, a pump compresses (and typically liquefies) an appropriate refrigerant adiabatically, which is then cooled to ambient temperature by being passed through a first heat exchanger and first fan disposed in a heat dump such as the outdoors. The ambient-tempered refrigerant is then adiabatically cooled (and typically evaporated) in a so-called "cold side" of the system disposed in the indoor space to be cooled by being passed through an expansion valve or orifice. The cooled refrigerant is passed through a second heat exchanger and fan, thereby cooling the indoor air. The refrigerant is thus warmed and is passed back to the compressor on the hot side, completing the cycle.
As used herein, the term "heat exchanger" should be taken to mean all the air-handling and refrigerant-conducting components of a heat exchanger system, including but not limited to tubing, coils, fins, fan blades, ducting, and the like.
In wall- or window-mounted air conditioners, the hot and cold sides typically are close-coupled, requiring a large opening for passage of air through the side of the building. A split-system air conditioner is so named because the hot side is "split" and remote from the cold side of the system. In a mini-split system, the cold side is typically disposed in an air handler assembly mounted on a wall in the space to be cooled. The hot side is mounted conventionally outside the building and is connected to the air handler assembly through insulated tubing for transmission of compressed and decompressed refrigerant as well as condensate from the cold side, requiring only minimal openings through the building wall.
As is known in the art, a mini-split system may also be provided with appropriate controls and valving and may be operated in a reverse mode wherein the outside compressor unit functions as a heat pump to abstract heat from the environment and transfer hot refrigerant to the inside air handler for heating room air being recirculated over the indoor heat exchanger.
To maintain thermodynamic heat-exchange efficiency in air conditioning units, it is necessary periodically to clean accumulated dust and debris from the heat exchanger in the cold side air handler assembly. Room air conditioning units of concern here typically are situated in, by way of example only, motels, hotels, residences, and offices, and may be in close proximity to residents, office workers, and valuable office furniture, computers, paperwork, and files, as well as finished flooring and walls; so extreme care and finesse are required in cleaning heat exchangers in these settings.
The present invention is directed to apparatus and method for easily and safely collecting spent cleaning fluids and debris from cleaned cold-side air handler assemblies in mini-split air conditioning units; for preventing damage to and contamination of nearby objects, walls, floors and persons during such cleaning operations; and for directing such fluids to a floor drain, sewer, or collection container for later disposal.
In the prior art, MacGyver Lab Pty Ltd, Melbourne, Australia, discloses the AIRCONcare™ Kit Wash Bag designed to attach to an air conditioning unit with a strong elastic band. A significant shortcoming of this system is the lack of any component to assist in keeping the mouth of the wash bag open to assure easy and complete reception of all fluids during cleaning of the heat exchanger. Further, the bag has no outlet so all fluids must be captured and the volume of fluids is limited by the volume of the bag. Further, the weight of the captive fluids must be borne by the air conditioning unit and the operator, typically with only one hand while manipulating a spray wand with the other hand. Further, cleaning of air conditioning units mounted relatively high on a wall is impractical and cumbersome, not to mention dangerous for risk of spillage of the collected fluids and debris upon removal and emptying of the bag.
Further in the prior art, SDLM Pty Ltd, Australia, discloses the Aqua QB system for cleaning mini-split air handler assemblies. The system comprises a plastic bag suspended by two sets of straps that cooperate to secure the bag to the air handler assembly. The bag includes a drain port.
Significant shortcomings of this system are that it relies on cooperating straps that are cumbersome and may require more than one technician to install and maintain the system on an air handler assembly. Because the straps are not fixed to the air handler assembly or the supporting wall in any manner, the cooperating straps require the users to monitor and adjust the straps to rebalance the apparatus to prevent slippage and failure of the apparatus during the cleaning process. Further, the system is disposed solely below the bottom of an air handler assembly and thus affords limited or no protection of the floor, wall, or furnishings against lateral splashing or spray from fluids and debris exiting the air handler assembly. Still further, the system has no wall brackets or other shielding to protect the supporting wall against fluids and debris deflected peripherally. Still further, the drain port lacks a lightweight integral drain hose, and a conventional hose is a relatively heavy addition to an already cumbersome apparatus.
Further in the prior art, HydroKleen Australia Pty Ltd discloses a cleaning system similar to the Aqua QB system for cleaning mini-split air handler assemblies. The system comprises a plastic bag suspended by two sets of straps that cooperate to secure the bag to the air handler assembly. The shortcomings of this system are the same as those for the Aqua QB system described above.
U.S. Pat. No. 6,863,116 B, issued Mar. 8, 2005 to Kane et al. ("the '116 Patent") discloses an apparatus for collection and disposal of waste-water and debris in an operation for cleaning heat exchanger tubes. The inventions of the '116 Patent comprise a bib in the general shape of a funnel with large open end for receiving waste-water and debris from the air handler assembly, with conical body converging to a small end terminating in an elongate duct for leading the waste water and debris to a drain; a support frame for receiving and maintaining the large end of the bib in open position, the support frame having a plate for positioning the bib; and a plurality of mounting arms projecting from the plate for insertion into the air handler assembly, permitting placement of the bib as desired to collect effluent during a cleaning operation.
The present invention provides a structurally superior solution for the safe and effective collection and disposal of waste-water and debris in an operation for cleaning the air handler heat exchanger in a mini-split air conditioning unit. By way of example only, the bib subassembly provides improved integrity, protection against accidental spillage and support of the assembly once mounted, as well as simplified assembly and use. The present invention introduces a subassembly including an adjustable cord cooperating with brackets disposable behind the sides of the air handler assembly to be cleaned, thus eliminating the need for manipulating a plurality of tubular cleaning brushes or straps. Further, the present invention's deflector plate or plates and brackets provide the added benefits of, in addition to easier assembly, disassembly, use, and stability, protection of the supporting wall upon which the unit is mounted against damage caused by peripheral deflection or splashing of fluids and debris.

Apparatus and method for collection and disposal of cleaning waste-water and debris from air conditioners


A semiconductor memory device includes a memory cell section having at least one memory cell using a cell transistor and a ferroelectric capacitor to store data. A sense amplifier is connected to the memory cell through a bit line. The device further includes an error checking and correction circuit which checks and corrects an error of data, which is read out of the memory cell by the sense amplifier, through the bit line.

1. Field of the Invention
The present invention relates to a semiconductor memory device and a semiconductor device having the same. More specifically, the invention relates to a nonvolatile ferroelectric random access memory using a ferroelectric capacitor (referred to as a FeRAM hereinafter) and a FeRAM-embedded large-scale integrated circuit (referred to as an LSI hereinafter).
2. Description of the Related Art
Attention has recently been attracted to a FeRAM as a semiconductor memory device. Refer to Jpn. Pat. Appln. KOKAI Publication No. 2002-175697, for example.
FIG. 1 shows an example of a configuration (a 1T-1C configuration) of a memory cell MC of a FeRAM. Referring to FIG. 1, the memory cell MC includes a ferroelectric capacitor (C) 101 and a metal oxide semiconductor (MOS) transistor (T) 102 that are connected in series. More specifically, the gate, drain, and source of the MOS transistor 102 are connected to a word line WL, a bit line BL, and one electrode (upper electrode) of the ferroelectric capacitor 101, respectively. The other electrode (lower electrode) of the ferroelectric capacitor 101 is connected to a plate line PL.
The memory cell MC stores data using hysteresis properties of a ferroelectric, as shown in FIG. 2. When the voltage of the ferroelectric capacitor 101 is 0V, the remanent polarization (amount) P of the ferroelectric on the positive side represents "1" and that of the ferroelectric on the negative side represents "0." Thus, the memory cell MC stores data.
There follows an explanation of an operation of writing/reading data to/from the FeRAM. This operation is carried out by applying a given pulse to the plate line PL.
First, the principle of the FeRAM in write operation will be described using a memory cell MC having a 2T-2C configuration shown in FIG. 3. Basically, the same is true of the principle of a memory cell MC having a 1T-1C configuration shown in FIG. 1. FIG. 4 depicts a timing pulse that is generated in write operation.
In the 2T-2C memory cell MC shown in FIG. 3, remanent polarizations P whose directions are opposite to each other are written to ferroelectric capacitors 101a and 101b that are connected to paired bit lines BLa and BLb via MOS transistors 102a and 102b, respectively. For example, the potential of the bit line BLa is set at the ground level (0V) and that of the bit line BLb is set at 5V. If, in this case, the potential of the word line WL is 6V or higher (but the power supply voltage Vcc is 5V and the threshold voltage VTH of each of the transistors 102a and 102b is 1V), the potential of the upper electrode of the ferroelectric capacitor 101a is 0V and that of the upper electrode of the ferroelectric capacitor 101b is 5V.
After the word line WL is set at a high potential (high level), a pulse PW as shown in FIG. 4 is applied to the plate line PL. For example, 0V is applied to the plate line PL at timing T1 (see FIG. 5B), 5V is applied thereto at timing T2 (see FIG. 6B), and 0V is applied thereto at timing T3 (see FIG. 7B). In FIGS. 5B, 6B and 7B, each of the arrows indicates the direction of remanent polarization P.
At timing T1, the remanent polarization P of the ferroelectric capacitor 101a is located at a remanent polarization point A (FIG. 5A), and that of the ferroelectric capacitor 101b is located at a remanent polarization point D (FIG. SC). At timing T2, the remanent polarization P of the ferroelectric capacitor 101a moves from the remanent polarization point A to a remanent polarization point B (FIG. 6A), and that of the ferroelectric capacitor 101b moves from the remanent polarization point D to a remanent polarization point E (FIG. 6C). At timing T3, the remanent polarization P of the ferroelectric capacitor 101a moves from the remanent polarization point B to a remanent polarization point C (FIG. 7A), and that of the ferroelectric capacitor 101b moves from the remanent polarization point E to the remanent polarization point D (FIG. 7C). Thus, the data write operation is completed. If this operation is defined as writing of data "0," writing of data "1" is defined as follows: the remanent polarization P located at the remanent polarization point D is written to the ferroelectric capacitor 101a, and the remanent polarization P located at the remanent polarization point C is written to the ferroelectric capacitor 101b.
Assume that power is shut down and the external electric field applied to the plate line PL and bit lines BLa and BLb becomes 0V. In this case, too, when data "0" is written, charges +Pr located at the remanent polarization point C are stored in the ferroelectric capacitor 101a, and charges −Pr located at the remanent polarization point E are stored in the ferroelectric capacitor 101b. Conversely, when data "1" is written, charges −Pr located at the remanent polarization point E are stored in the ferroelectric capacitor 101a, and charges +Pr located at the remanent polarization point C are stored in the ferroelectric capacitor 101b.
On the other hand, reading of data from the FeRAM is usually a destructive read. A rewrite operation is therefore required even in read operation and after all the read operation is almost the same as the write operation.
FIG. 8 illustrates a data read operation taking the above 2T-2C memory cell MC as an example. FIG. 9 shows a timing pulse generated in read operation.
In order to read data, as shown in FIG. 8, the potentials of the bit lines BLa and BLb are set at the ground level (0V) in the first precharge cycle. A sense amplifier (not shown) is separated from each of the bit lines BLa and BLb and. Under these conditions, the potential of the word line WL is set at 6V or higher. Thus, the potentials of the upper electrodes of the ferroelectric capacitors 101a and 101b both become 0V. In FIG. 8, the arrows indicate the directions of remanent polarizations P.
In read operation, a pulse PR as shown in FIG. 9 is applied to the plate line PL, as in the write operation described above. For example, 0V is applied to the plate line PL at timing T1 (FIG. 10B), 5V is applied thereto at timing T2 (FIG. 11B), and 0V is applied thereto at timing T3 (FIG. 12B). In FIGS. 10B, 11B and 12B, the arrows indicate the directions of remanent polarizations P.
Assume that the remanent polarizations P as shown in FIGS. 10A and 10C are written to the ferroelectric capacitors 101a and 101b by writing data "0." More specifically, assume that the remanent polarization P of the ferroelectric capacitor 101a is written to the remanent polarization point C and that of the ferroelectric capacitor 101b is written to the remanent polarization point E at timing T1. If data "0" is read in this case, the potential of the plate line PL changes from 0V to 5V at timing T2. Thus, the remanent polarization P of the ferroelectric capacitor 101a moves from the remanent polarization point C to the remanent polarization point B (see FIG. 11A), and that of the ferroelectric capacitor 101b moves from the remanent polarization point E to the remanent polarization point B (see FIG. 11C). Data of the ferroelectric capacitor 101b, the direction of remanent polarization P of which is inverted, is destroyed temporarily.
If data "1" is read, the remanent polarization P of the ferroelectric capacitor 101a moves from the remanent polarization point E to the remanent polarization point B and that of the ferroelectric capacitor 101b moves from the remanent polarization point C to the remanent polarization point B at timing T2. Data of the ferroelectric capacitor 101a, the direction of remanent polarization P of which is inverted, is destroyed temporarily.
The potential of the bit line connected to the ferroelectric capacitor the direction of remanent polarization P of which is inverted is slightly higher than that of the bit line connected to the ferroelectric capacitor the direction of remanent polarization P of which is not inverted. Data "0" or "1" can thus be read by sensing a difference in potential between the bit lines BLa and BLb. When data "0" is read, the potential of the bit line BLa becomes 0V and that of the bit line BLb becomes 5V. When data "1" is read, the potential of the bit line BLa becomes 5V and that of the bit line BLb becomes 0V.
The data that is destroyed by polarization inversion is rewritten to a memory cell MC within the same read cycle as the potential of the plate line PL changes from 5V to 0V. More specifically, when data "0" is read, the remanent polarization P of the ferroelectric capacitor 101a moves from the remanent polarization point B to the remanent polarization point C (FIG. 12A) and that of the ferroelectric capacitor 101b moves from the remanent polarization point C to the remanent polarization point D at timing T3 (FIG. 12C). When data "1" is read, the remanent polarization P of the ferroelectric capacitor 101a moves from the remanent polarization point C to the remanent polarization point D and that of the ferroelectric capacitor 101b moves from the remanent polarization point B to the remanent polarization point C at timing T3. The read operation is completed accordingly.
An FeRAM whose memory cells have a 1T-1C configuration requires a dummy cell that generates a reference potential to sense a small variation (potential difference) of bit lines or data "0" or "1."
FIG. 13 shows a basic configuration of a prior art FeRAM. In the FeRAM, a sense amplifier 111 reads data out of a cell area (array) 112. This data is rewritten to the cell area 112 in read operation as described above.
The FeRAM causes a so-called imprint phenomenon. The imprint phenomenon is as follows. If a cell is left unattended with data written thereto, its hysteresis properties are shifted to the positive or negative side of a voltage axis. The hysteresis properties of a cell are almost symmetric with respect to an intersection point between the voltage axis (V) and polarization axis (P) immediately after data is written to the cell. As shown in FIG. 14, however, the hysteresis properties of a cell that is left unattended with data "1" written thereto are shifted in the direction of the arrow (toward the negative side of the voltage axis), or from the position defined by broken lines to that defined by solid lines. Similarly, as shown in FIG. 15, the hysteresis properties of a cell that is left unattended with data "0" written thereto are shifted in the direction of the arrow (toward the positive side of the voltage axis), or from the position defined by broken lines to that defined by solid lines.
Though the above imprint phenomenon occurs, the amount of signal (the amount of polarization) does not vary so greatly when data of a memory cell that is left unattended (hereinafter referred to as unattended data) is read out as it is, as shown in FIGS. 16 and 17. No problems occur in this case. When data that is rewritten with remanent polarization P whose direction is the same as that of remanent polarization of the unattended data, or data that is rewritten by the same data as the unattended data is read out, no problems occur in particular. If, however, the memory cells that cause the imprint phenomenon increase in number, data cannot be read correctly.
If unattended data, which is rewritten by data whose remanent polarization P is opposite in direction to that of the unattended data, is read out, the amount of remanent polarization reduces more than that in the normal case where no imprint phenomenon occurs. In other words, as shown in FIG. 18, data "0" whose remanent polarization P is opposite in direction to that of unattended data (data "1") is written to a memory cell that is unattended with data "1" written thereto. Then, the amount of remanent polarization (black circle) of data "0" decreases more than that of the original remanent polarization (white circle) in the normal case by the shift of hysteresis properties. Thus, data "0" cannot be read correctly. Similarly, as shown in FIG. 19, data "1" whose remanent polarization P is opposite in direction to that of unattended data (data "0") is written to a memory cell that is unattended with data "0" written thereto. Then, the amount of remanent polarization (black circle) of data "1" is reduced more than the original remanent polarization amount (white circle) in the normal case by the shift of hysteresis properties. Thus, data "1" cannot be read correctly.
As described above, the prior art FeRAM has the problem in which data cannot be read correctly when the number of memory cells that cause an imprint phenomenon and when unattended data is rewritten by data whose remanent polarization P is opposite in direction to that of the unattended data.

Semiconductor memory device using ferroelectric capacitor, and semiconductor device with the same


A lens cap includes: a cap main frame; and a pair of operating members attached to a front surface of the cap main frame, wherein, when the operating members are made to slide outward by a biasing force, engaging portions at outer ends of the operating members are engaged with to-be-engaged portions in the front end opening, while first locking portions are formed at inner edges of the operating members, and second locking portions are formed on back surfaces of the operating members, concave portions are formed on the front surface of the cap main frame, first openings and second openings are formed in bottoms of the concave portions, cover plates are placed on the back surface of the cap main frame, and biasing members are placed between the cover plates and the back surface of the cap main frame.

Field of the Invention
The present invention relates to a lens cap.
Description of the Related Art
There is a conventional lens cap that has a pair of operating members attached to the cap main frame covering the front end opening of a lens barrel in such a manner that the operating members can slide inward and outward with respect to the center of the cap main frame (see JP 2013-7772 A).
When the operating members are made to slide outward by a biasing force (pushing force), the engaging portions of the operating members are engaged with the to-be-engaged portions in the front end opening, so that the cap main frame is attached to the front end opening of the lens barrel.
Also, when the outer edge portions of the operating members protruding outward from the outer peripheral surface of the cap main frame are made to slide inward with fingers, the engaging portions of the operating members are disengaged from the to-be-engaged portions in the front end opening, so that the cap main frame can be detached from the front end opening of the lens barrel.
However, the outer edge portions of the operating members protrude outward from the outer peripheral surface of the cap main frame. Therefore, if a hand or the like comes into contact with the protruding outer edge portions of the operating members by mistake while the cap main frame is attached to the front end opening of the lens barrel, the operating members are made to slide inward, and the cap main frame might inadvertently fall off.


The description relates to a device for the regulation of the amount of a medium in a heating or cooling system, comprising a combined valve, which in one and the same valve housing includes one part for pressure difference regulation (2) and one part for flow limitation (3), the flow being limited in a stepless, adjustable way, i.e. the device obtaining an adjustable Kvs-value. Also, the chosen Kvs-value can be limited by a plunger, which always can operate with its complete stroke length.

The object of a device according to the present invention is to keep the flow constant by combining a pressure difference valve with an integrated check device. The check device can also be varied by choosing in a stepless manner a more or less open check device in order to in this way in the separate case let the desired flow reach a chosen pressure difference level.
The already known devices, designed to meet these objects, and in these cases primarily pressure difference regulators or flow regulation valves, are impaired by various drawbacks.
A device, based on a pressure difference regulator, in principle can limit the flow to a level, which depends on the chosen pressure difference across the valve and the size of the valve, i.e. the flow, which it is chosen to be able to limit the pressure for. The limitation is caused by the fact, that, when a smaller flow is needed, a flow, which is smaller than the predicted one, to the valve, which is related to a definite pressure difference, must be added a valve, which eliminates this too large flow. In this case this separate valve can be allowed to operate with a pressure level, which may cause noise, since the chosen pressure difference valve cannot check this smaller flow and thus not limit the pressure for this smaller flow. Consequently, two different valves must be combined. One pressure difference valve and one flow regulating valve in order to obtain the desirable regulation functioning is of course an expensive solution.
A device, based on a flow regulation valve, can of course limit the flow, but such a system must include valves, which also limit the available pressure difference across the flow limitation valve. This means, that regardless of what system of the two mentioned above, which is chosen, the set-up must comprise at least two separate units, one which limits the pressure difference level and one which regulates the flow.
In small set-ups, e.g. in small houses, the pressure levels are normally not so high, that the above-mentioned combination of difference- and flow limitation functions are required. In these set-ups radiator valves are used, which can be designed to allow the opening between the cone and the seat of the valve to vary in various ways in order to be able to regulate the flow in a better way.
Examples of solutions for small set-ups are described in SE 8600679-8 and in DE 27 56 118.
For large set-ups, i.e. often set-ups with high pressure differences, there are constructions, which are based on a limitation of the flow in steps, which arrangement is described in e.g. EP 0 591 873 A 1, and as an alternative a use of a pressure difference valve according to e.g. U.S. Pat. No. 6,196,259 B1.
In all these existing solutions the total cost is high, in case a satisfactory functioning in a set-up is to be achieved, partly because several units are required and partly because the existing pressure difference valves often are complicated constructions. Since at least one pressure reducing function and one flow limiting function are required, in most set-ups, the final cost for the client will be high. Two components must be installed and these often require some type of maintenance or control, which means elevated costs.

Apparatus for regulating flow of a medium in a heating and cooling system


A system and method for gamut mapping out-of-gamut signals. A method includes adjusting each color in a color signal, determining a maximum color value of the color signal, in response to a determining that the maximum color value exceeds a maximum displayable color value, scaling color values of colors not having the maximum color value, and setting the color value of the color having the maximum color value to be equal to the maximum displayable color value. The method further includes leaving the color values of the colors in the color signal unchanged in response to a determining that the maximum color value does not exceed the maximum displayable color value. The scaling of color values not equal to the maximum color value results in a maintaining of a proper hue of the color signal, thereby not introducing color artifacts and other forms of color noise.

When displaying an image for viewing purposes, it may be desirable to utilize as large a color gamut as possible. In general, the use of a large color gamut allows for a more accurate rendering of the image since a larger number of colors may be available for use in displaying the image. However, a display system may have a fixed color gamut dependent on an illumination system used in the display system. For example, display systems using laser light sources, light emitting diodes, electric arc lamps, and so forth, may have fixed color gamuts based on the illumination system. The attempted display of an image using a color gamut that may be larger than the color gamut of the display system may result in the display system attempting to display colors with negative color values. For example, in a YCbCr color space, some non-negative RGB YCbCr values may correspond to negative RGB values in an alternative RGB color space. Thus, in display systems not capable of displaying colors with negative RGB color values, an inaccurate rendering of the color and image may be the result. This may potentially result in the image having a worse appearance than if a smaller color gamut was initially used to display the image.
Another technique commonly used to increase image quality of images displayed by a display system is to boost color saturation. Boosting color saturation may entail the gaining of one or more color components of a signal in an image being displayed by the display system. Boosting color saturation may increase the image quality by increasing the colorfulness of the image. However, like negative color values, the use of color saturation boosting may result in color values exceeding color values displayable by a display system, and may result in color value clipping and the introduction of color artifacts and noise, which may negatively impact image quality.

System and method for gamut mapping of out-of-gamut signals