A circuit board assembly includes a printed circuit board (PCB). The PCB has a pad layout which includes a set of pads arranged in a two-dimensional array having at least two pads in a first direction and at least two pads in a second direction that is substantially perpendicular to the first direction. Each pad has (i) a central portion and (ii) multiple lobe portions integrated with the central portion and extending from the central portion of that pad. The circuit board assembly further includes a circuit board component mounted to the pad layout via a set of solder joints. The above-described pad layout (or land pattern) is well-suited for soldering to a variety of AAP devices (e.g., either a CCGA device or a BGA device).

Surface mount technology (SMT) components are available in a wide variety of Area Array Package (AAP) types such as Ball Grid Array (BGA) packages and Ceramic Column Grid Array (CCGA) packages. A BGA package includes a two-dimensional array of ball-shaped contacts for mounting to a circuit board. In contrast, a CCGA package includes a two-dimensional array of column-shaped contacts for mounting to a circuit board.
When a circuit board manufacturer wishes to mount a BGA device to a circuit board, the manufacturer typically designs the circuit board to include a component mounting location having round circuit board pads corresponding to the two-dimensional array of ball-shaped contacts of the BGA device. To mount the BGA device to the component mounting location, the manufacturer prints solder paste over the round circuit board pads (e.g., using a stencil defining round solder paste apertures that mirror the round circuit board pads) and places the BGA device over the mounting location (e.g., using automated pick-and-place equipment). At this time, the ball-shaped contacts of the BGA device are (i) properly registered over the round circuit board pads and (ii) in contact with the printed solder paste. The manufacturer then applies heat (e.g., using an oven) to activate flux within the solder paste and to melt solder within the solder paste, thus soldering the ball-shaped contacts of the BGA device to the round circuit board pads of the circuit board.
When a circuit board manufacturer wishes to mount a CCGA device to a circuit board, the manufacturer typically configures the circuit board to include a component mounting location having larger diameter round circuit board pads or, alternatively, square circuit board pads which correspond to the two-dimensional array of column-shaped contacts of the CCGA device. For space considerations, square pads may be preferred. To mount the CCGA device to the mounting location, the manufacturer prints solder paste over the square circuit board pads, and registers the column-shaped contacts of the CCGA device over the square circuit board pads in a similar manner to that described above for a BGA device. Next, the manufacturer passes the poptilated circuit board through an oven to solder the column-shaped contacts of the CCGA device to the square circuit board pads of the circuit board.

Techniques for mounting an area array package to a circuit board using an improved pad layout


An embossed porous membrane wipe and/or a method of making and/or using such embossed microporous membrane wipe. The preferred embossed microporous membrane wipe includes a microporous membrane embossed alone or with a polypropylene nonwoven. The nonwoven may be a spunbond, meltblown, and/or electrospun nonwoven. The microporous membrane may include a biaxially oriented microporous membrane. The biaxially oriented microporous membrane may be made from one or more block copolymers of polyethylene and/or polypropylene. A method of using such an embossed microporous membrane, composite or laminate wipe for skin oil blotting is also provided.

Microporous membranes are known, can be made by various processes, and the process by which the membrane is made may have a material impact upon the membrane's physical attributes. See, Kesting, R., Synthetic Polymeric Membranes, A structural perspective, Second Edition, John Wiley & Sons, New York, N.Y., (1985). At least three commercially viable processes for making microporous membranes include: the dry-stretch process (also known as the CELGARD process), the wet process, and the particle stretch process.
The dry-stretch process refers to a process where pore formation results from stretching a nonporous precursor. See, Kesting, Ibid. pages 290-297, incorporated herein by reference. The dry-stretch process is different from the wet process and particle stretch process. Generally, in the wet process, also known as the phase inversion process, or the extraction process or the TIPS process (to name a few), the polymeric raw material is mixed with a processing oil (sometimes referred to as a plasticizer), this mixture is extruded, and pores are then formed when the processing oil is removed (these films may be stretched before or after the removal of the oil). See, Kesting, Ibid. pages 237-286, incorporated herein by reference. Generally, in the particle stretch process, the polymeric raw material is mixed with particulate, this mixture is extruded, and pores are formed during stretching when the interface between the polymer and the particulate fractures due to the stretching forces. See, U.S. Pat. Nos. 6,057,061 and 6,080,507, incorporated herein by reference.
While membranes made by the dry-stretch process have met with excellent commercial success, there is a need to improve their physical attributes, so that they may be used in a wider spectrum of applications.
U.S. Pat. No. 6,602,593 is directed to a microporous membrane, made by a dry-stretch process, where the resulting membrane has a ratio of transverse direction tensile strength to machine direction tensile strength of 0.12 to 1.2. Herein, the TD/MD tensile ratio is obtained by a blow-up ratio of at least 1.5 as the precursor is extruded.
U.S. Patent Publication No. 2007/0196638, incorporated herein in its entirety, discloses a microporous membrane made by a dry-stretch process. The microporous membrane has substantially round shaped pores and a ratio of machine direction tensile strength to transverse direction tensile strength in the range of 0.5 to 5.0. The method of making the foregoing microporous membrane includes the steps of: extruding a polymer into a nonporous precursor, and biaxially stretching the nonporous precursor, the biaxial stretching including a machine direction stretching and a transverse direction stretching, the transverse direction stretching including a simultaneous controlled machine direction relax.
U.S. Patent Publication No. 2011/0223486, incorporated herein in its entirety, discloses a microporous membrane made by a dry-stretch process that has substantially round shaped pores and a ratio of machine direction tensile strength to transverse direction tensile strength in the range of 0.5 to 6.0. The method of making the foregoing microporous membrane may include the steps of: extruding a polymer into a nonporous precursor, and biaxially stretching the nonporous precursor, the biaxial stretching including a machine direction stretching and a transverse direction stretching, the transverse direction stretching including a simultaneous controlled machine direction relax. At least selected embodiments of such membranes were disclosed to be directed to biaxially oriented porous membranes, composites including biaxially oriented porous membranes, biaxially oriented microporous membranes, biaxially oriented macroporous membranes, filtration media, humidity control media, flat sheet membranes, liquid retention media, and the like, related methods, methods of manufacture, methods of use, and the like.
While membranes made by the dry-stretch process have met with excellent commercial success, such as a variety of CELGARD® dry-stretch porous membranes sold by Celgard, LLC of Charlotte, N.C., it has been found that some such porous membranes may be used in a wider spectrum of applications, may perform better for particular purposes, or the like.
The use of wipes to remove or reduce the accumulation of oil, like skin oil, on the surface of people's skin, especially their faces, along with the surface of other objects (like fingerprints, smudges, and the like, on eyeglasses, electronics, cell phones, displays, optical devices, camera lenses, microscope lenses, and other precision optics, the like, etc.) is known. Oil, smudges, fingerprints, the like, etc. have long been recognized as imparting an undesirable sheen and/or feel. In order to remove the oil, fingerprints and/or smudges, people use various blotting materials or wipes. The principal materials in use today for the skin and face include various types of papers (i.e., cellulose based materials) in addition to microporous polypropylene membranes. Some desired features of these materials include, but are not limited to, the following: pleasant to the touch, both to the fingers and the face; absorbs oil without leaving oily residue on the fingers (microporous polypropylene membrane performs better in this regard than paper); provides visual indication of the absorbed oil; and absorbs oil without smearing or otherwise interfering with facial cosmetics. The most common material used for cleaning or wiping the surface of objects, like eyeglasses, electronics, cell phones, displays, optical devices, camera lenses, microscope lenses and other precision optics, the like, etc. are lint free technical wipes. One example of such a lint free technical wipe is the Kimtech® Touchscreen Wipe® sold by the Kimberly-Clark Corporation. Some desired features of these materials include, but are not limited to, the following: designed for delicate tasks; low lint; non-abrasive; pleasant to the touch; absorbs oil without leaving oily residue on the fingers; provides visual indication of the absorbed oil; and anti-static dispensing.
Facial blotting papers have become increasingly popular in recent years, particularly among young women in East Asian countries such as China, Japan, and Korea. By blotting these disposable sheets on the skin, the undesirable "shine" can be removed. The user may also perceive a benefit of cleaner skin that is less prone to acne. There are two types of facial blotters on the market today—paper and polymeric. Blotters made from paper, similar to tissue used in gift wrapping, absorb oil reasonably well, but tend to be somewhat stiff. Microporous polymeric blotters, which are sold under various brand names including Clean & Clear by Johnson & Johnson, are softer and generally more effective at absorbing oil.
Therefore, there is clearly a need to develop new or improved wipes that provide unique features for certain applications, for certain conditions, or the like.

Embossed microporous membrane wipes and methods of manufacture and use thereof


Provided are a novel immuno-optomagnetic point-of-care (PoC) assay and in particular, a method for detecting an analyte using magnetic nanoparticles and quantum dots (QD) having antibodies which are interfaced with the fabricated PoC biochip platform for quantitative analysis, and an immuno-optomagnetic detection method. The method also relates to methods of making such a plurality of conjugated magnetic quantum dot nanoparticles, methods of detecting analytes using such a plurality of conjugated quantum dot nanoparticles.

Development of nano-biosensors as a point-of-care (PoC) diagnostics device is a most promising approach for early, sensitive, rapid and cost-effective analysis for health and well-being or monitoring recurring diseases, such as cancers. Existing methods for the diagnosis of cancer are highly expensive and time-consuming. Most common among such methods are mammogram, tissue biopsy tests, ELISA tests, PET/CAT scans that makes rapid diagnosis extremely difficult and time-consuming.
Among many different types of cancers, breast cancer is the most common cancer among women and it is regarded as the second leading cause of cancer related mortality worldwide [10]. It is estimated that 2.09 million breast cancer related cases were estimated to have occurred causing 627,000 deaths worldwide according to a WHO 2018 report. These figures account for about 15% of all cancer deaths among women [10].
Major concerns for a progressive cancer disease is its undetectability at the early stages of development, or lack of a rapid, less-expensive point-of-care based early diagnostic tool, which could provide early warning signs that pave way to seek medical attention and enable prevention of a progressive cancer.
Human epidermal growth factor receptor 2 (ErbB2/Her2) protein is associated with multiple cancer types, including in breast cancer, it is found to be overexpressed by 15-30% and 10-30% in gastric/gastroesophageal cancers and thus it serves as a prognostic and predictive biomarker [16]. The extracellular ErbB2/Her2 cleaved protein from tumor cells enters the blood stream as a result of increased expression of ErbB2/Her2 which serves as an indicator of a high risk of cancer disease. The clinical prognostic and predictive usefulness of the serum ErbB2/Her2 levels is warranted for clinic-pathologic parameters and therapy monitoring marker [6, 11, 12, 16]. It is imperative to monitor ErbB2/Her2 protein levels because it is also found overexpressed in other types of cancers including ovarian, lung, colorectal, bladder, pancreatic, colon, endometrial and oral cancers [16, 17].
Breast cancer patients' blood samples contains elevated levels of ErbB2/Her2 protein concentrations (15-75 ng mL−1) compared to 2-15 ng mL−1 of same protein observed in normal individuals [6-8]. Early detection and monitoring of the serum ErbB2/Her2 levels can increase the diagnosis speed, screening and successful treatment of cancer disease, and survival of the patient. Therefore, there is an urgent demand for a sensitive, rapid and accurate technology platform for PoC based detection of cancer biomarker in serum, tissue or body fluids.
A number of conventional and well-established diagnostic methods are currently in practice, such as fluorescence insitu hybridization (FISH) [6, 11, 12], enzyme-linked immunosorbent assay (ELISA) [7, 13], radioimmunoassay [14], and chemiluminescence immunoassays [6, 8, 15].
There are several major problems with the existing above mentioned techniques including their high-cost and time-consuming that prevents repetitive testing, required sophisticated instruments, and trained personal to perform the tests, which makes such approaches more complicated and unsuitable for early detection of cancer disease. Moreover, all these existing diagnostic approaches require laborious washing steps in order to separate unbound and labeling of free ligands/receptors to minimize their non-specific fluorescent background signal and complex matrix susceptibility. These parameters affect the stability and structure of target probe biomolecule specificity and weaken the sensitivity of immunoassay platform.
Despite of the existing diagnostic methods that most of them have been around for the past decade, none of them have been successfully implicated for early cancer diagnosis. Taking all the above into consideration, it is time to develop and evaluate new diagnostic approaches that at least accessible, cost-effective, and affordable PoC based diagnosis, which paves way to prevention from progression of cancer and treatment. Extension of traditional diagnostic approaches into lab-on-a chip and PoC diagnostics currently presents significant challenges, especially when affordability, speed and accuracy of detection of analytes, such as diagnosis of cancers or other chronic diseases that are not limited to it, but can also be applicable to a whole range of other targets, including other biomarkers, bacterial/viral infections, nucleic acids (DNA/RNA), drugs, chemicals, pesticides or environmental agents.
Semiconductor quantum dot (QD) nanocrystals (2-10 nm in size range) have unique size-dependent properties with dimensional similarities with biological macromolecules making them most suitable for optical biosensors and biological imaging. QDs' emission can be tuned by their size and composition that has broad excitation and absorption ranges, narrow and symmetrical photo emission and strong luminescence and robust photo-stability. QD-based bio-conjugates have been used as FRET diagnostic probes [18-20], western blotting [21], microbeads labeled-microarrays [22, 23], QD fluorescence quenching assays [24-26] and other QD-based immunochemistry assays [27-31] for the detection for cancer protein disease biomarker [32].
Most of the QDs-based biosensor systems suffer due to their physical or chemical instability in biological assays, but several attempts have been made to improve QDs' physico-chemical stability [32, 33], However, fabrication of QD-based bio-conjugations for biosensing application is a challenging process because of their irreversible precipitation that causes quenching that affect sensitivity [32, 34].
Recently, bio-conjugation strategies with quantum dots (QDs), magnetic microbeads and other nanoparticles have been developed for biological imaging, medical nano-diagnostics, treatment, and drug delivery systems [35, 36]. A few studies have shown the combination of large magnetic microbeads and QDs were individually functionalized with antibodies, respectively and later sandwiched with a specific target protein for detection, but it required that pure QDs be cleaved in solution phase or added separately in order to obtain a detectable signal [37-42]. Such methods although have advantages of easy separation, collection, and filtration of the probes, but require laboratory settings for assays that are not desirable or unsuitable for PoC in resource limited settings [43]. Nanosized magnetic iron oxide (Fe3O4) nanoparticles (MNPs) been successfully used in magnetically activated cell separations and single molecule manipulation that have been approved by FDA for use in magnetic resonance (MR) imaging [35].
MNPs having 5-15 nm sizes exhibit paramagnetic characteristics in solution that substantially restrict their potential aggregation [44]. Chemical combination of QDs and MNPs provide multimodal functionality that has major advantages in bio-labeling and MR imaging because of their combined optical and magnetic (optomagnetic) properties exhibited in a single nanomaterial, which enable simultaneously bio-labeling, imaging, sorting and separation processes [35, 45].
Only few reports have been focused on fabrication of magnetic QDs (MQDs) and their utility in PoC or lab-on-a-chip platforms. For eg., magnetic QDs have been used for the detection and separation of cells and biomarkers based on complimentary engineered DNA/RNA sequences [43, 46-48]. These magnetic QDs nanoprobes utilized in immunoassays were mainly fabricated by high temperature precursor decomposition, doping (transition metal doped into a bulk QDs), encapsulation (MNPs and QDs encapsulated using silica or polymer matrix) and cross-linking (MNPs and QDs conjugation by a linker or electrostatic force) methods.
The first three approaches mentioned above are limited because of loss of magnetic property due to disordered magnetic crystal structure, interfacial instability of available doped material and NP aggregation, and difficulty with sequential synthesis procedures, respectively. Among these strategies, fabricating MQDs via QD crystallization followed by MNPs crosslinking approach is fast, simple and prevents from many of the limitations of sequential synthesis steps and robustly allow interfacing with PoC immunoassay diagnostic chip.
A bio platform/kit comprising magnetic beads which contain quantum dot doped nanoparticles and sandwich assay structure that performs biological detection by attached antibodies on the magnetic beads' surface is described in KR2019037082A. This nanoparticle (silica)/quantum dot complex has inorganic material core and a quantum dot layered shell. The kit contains nitrocellulose (NS) membrane with surface-fixed quantum dot-doped nanoparticles which acts as sensing membrane.
However, in the above mentioned patent document, UV-vis spectrometer is required for detecting fluorescent signal and a Lateral Flow membrane is used for separation of materials that is not only a time-consuming process, but also accompanies the drawbacks of non-specificity and impeding sample migration to receptor interaction area on membrane. Relying on nitrocellulose membrane in the same assay process is another disadvantage because of non-specific adsorption, which results in yielding high possibility of false-positive or false-negative outcomes. Moreover, large size variation of complex silica core (120 nm) coated with multilayer quantum dots of varying sizes forms a thick shell of 20-500 nm makes it extremely uncontrollable in its particle behavior, which is undesirable for biosensing applications.
The assay kit/method presented in KR2019037082A requires complex laboratory settings and laboratory equipment to perform the tests. In addition, the assay in KR2019037082A also relies on many consumables, such as a glass plate, polystyrene 96-well microtiter plate in addition to large macro silica particles coated with multilayered QDs. Multilayer quantum dot array with silica core is independent of magnetic micro-bead that independently react with biological material (target) makes it more complicated process for sensing application.
Nitrocellulose membranes are used in lateral flow assays (LFAs) such as those in Pregnancy Test Strips, where it is useful for only qualitative YES or NO type of results. This is because, the sample in which the target molecule to be detected is first mixed with nanoparticles. As mentioned in KR2019037082A, the core silica coated with multi-layered QDs makes its size to attain as large as <120 nm and that has to travel through the nitrocellulose membrane. This has major technical problem because such a large particle size may often fail to migrate without leaving its traces in the nitrocellulose membrane. Imagining these large sizes of particles has to bind to even larger magnetic micro bead (4 micron size or 4000 nm) to form a complex as explained in the KR2019037082A. This huge complex is applied to bioactivated nitrocellulose membrane to detect/sense the target as explained in the KR2019037082A document.
In a recent study, magnetic QDs have been used for the lateral-flow immunoassay (LFIA) that utilizes over 140 nm large magnetic particles (located in the center) coated with QDs, and a smartphone assisted detection of prostate specific antigen (PSA) has been reported [49]. MNPs being in the center with QDs around it causes quenching and toxicity because of Cd in CdSe/ZnS quantum dots nanocrystals. Therefore, usage of this type of magnetic QDs is not appropriate to be kept in contact with living cells or used in-vivo. In the said study, magnetic nanobeads of 140 nm size were conjugated with QDs that further increases the size of these particles to over 150 nm. These large magnetic nanobeads are coated with QDs which makes QDs more vulnerable to interact with surrounding external environments or easily dissociate from the particle surface that negatively affects the biosensing process, or causing severe and direct cytotoxicity.
In addition, usage of LFIA-like methods mentioned above rely heavily on migration of nanoparticles in a complex matrix that are more prone to non-specific binding with LFIA matrix. This hampers the detection process using LFIA due to high possibility of false-positive/negative responses, which make such devices unsuitable for PoC settings. Therefore, direct use of smaller nano-sized magnetic nanoparticles (MNPs) on inert surfaces, as well as, fabricating a different orientation of QD-to-MNPs architectures could provide more sensitive, accurate, specific, selective, and more reliable detection of analytes in PoC settings.

Immuno-optomagnetic point-of-care assay and method for detection of analyte using multifunctional optomagnetic quantum dot nanqcrystals (MQDs)

SABANCI UNIVERSITESI NANOTEKNOLOJI ARASTIRMA VE UYGULAMA MERKEZI


According to some embodiments, there is provided a method comprising labeling each of a plurality of subjects in an image with a label, the label for each subject indicating a kind of the subject, wherein the labeling comprises analyzing the image and/or distance measurement points for an area depicted in the image, and determining additional distance information not included in the distance measurement points, wherein determining the additional distance information comprises interpolating and/or generating a distance to a point based at least in part on at least some of the distance measurement points, wherein the at least some of the distance measurement points are selected based at least in part on labels assigned to one or more of the plurality of subjects.

There has been developed, in order to realize autonomous movement of a mobile object, a technology for generating a local map around the mobile object and estimating a self-position thereof.
For such a technology, there has been proposed a technology for weighting a result obtained by use of a monocular camera (image) and a radar (radio wave) depending on a situation and detecting an object, thereby generating a local map (see Patent Literature 1).

Signal processing apparatus, signal processing method, program, and mobile object for map generation baded on LiDAR and image processing


The ellipsometry device includes a first focusing device, combined with a first optical system, for focusing the light beam from the first optical system onto the sample, a second focusing device, combined with a second optical system, for focusing the beam reflected by the sample surface onto the input of the second optical system, and an optical correction device for correcting, together with the first and second focusing devices, the position of the focused reflected beam so as to reject the interference reflections generated by the surface of the sample opposite the light beam receiving surface, and to obtain a maximum signal level at the photodetector.

The invention relates to the field of ellipsometry, and more particularly to spectroscopic ellipsometry.
It finds a general application in any field in which ellipsometry is used, and more particularly in micro-electronics in the optical inspection of a laser surface treatment, such as the annealing of amorphous silicon samples by excimer laser. It thus finds a very particular application in the manufacture of liquid crystal screens consisting of at least one layer of amorphous silicon deposited on a transparent substrate. It also finds an application notably in surface cleaning, polishing and preparation.
In the patent FR-A-2602338 and in the article: JOURNAL OF APPLIED PHYSICS, Aug. 1, 1986, US, vol. 60, No. 3, ISSN 0021-8979, pages 859-873, XP00579985, M. ERMAN et al, "Spatially resolved ellipsometry"; an ellipsoneter comprises in general terms a light source, a sample holder, a photodetector, a first optical system mounted between the light source and the sample holder, and a second optical system mounted between the sample holder and the photodetector. The first optical system illuminates the sample supported by the sample holder, at an oblique angle of incidence, by means of a polarized light beam. The second optical system collects the light sent back by the sample. In practice, first focusing means, associated with the first optical system, focus the illumination beam coming from the said first optical system on the sample whilst second focusing means, associated with the second optical system, focus the beam reflected by the surface of the sample on the entrance of the second optical system.
In the patent application entitled "Device and method for laser surface treatment", filed by the Applicant under the number 95 09778 and published under the number FR-A2737806 (for all useful purposes, the content of this application forms an integral part of the present application), a characterization of a sample by ellipsometry is advantageously used in the manufacture of liquid crystal screens, in order to optimize the process of recrystallization of the silicon by laser by controlling the application of the laser energy by means of the ellipsometry measurement.
In such a manufacture of liquid crystal screens, the sample holder supports a sample comprising at least one layer of a material of the amorphous silicon type, of given thickness and deposited on a transparent substrate (for example glass) of given thickness. The front face of the sample receives here the illumination radiation whilst the rear face of the sample is in contact with the sample holder.
Because of the thickness of the transparent substrate, the interface between the rear face of the said sample and the sample holder reflects towards the second optical system and the photodetector an interference light beam which may falsify the ellipsometry measurements.

High spatial resolution ellipsometry device

Societe de Production et de Recherches Appliquees


A facsimile machine is provided which includes a mechanism to generate ASCII codes for addressing a digital network, and to generate numeric number for addressing the public switched telephone (analog) network. Such facsimile machine can address other facsimile machines and communicate data over either network, in digital or analog format.

A data transmission network system typically connects with many terminals for data transmission. A first terminal wishing to send data to a desired second terminal must address the second terminal before transmitting the data.
Facsimile machines (or FAX) were initially designed to transmit and receive image data over the analog Public Switched Telephone Network (PSTN) system in accordance with existing protocols. In the PSTN system, the facsimile machines (i.e. terminals) address each other using numeric addresses, including 0, 1, 2 . . . , 9 and sometimes * and # signs. Typically, the addresses have a fixed length in the PSTN system. Because the PSTN system uses ten numerics (0-9) and possibly two additional signs (0-9, * and #) for addressing, it needs no more than 12 keys to represent the addresses.
By contrast, facsimile machines communicating over switched digital networks use addresses that include ASCII codes because such networks were originally designed for computer systems which can generate and identify ASCII codes.
Digital data transmission over a switched digital network offers advantages contrasted to analog data transmission over the PSTN system. For example, many companies already own private digital networks, perhaps for computer networking. If facsimile machines are coupled to these pre-existing digital networks, literally no extra cost is incurred in using the digital network lines.
Further when the image data are transmitted over a digital network in digital format, encryption of the image data is more easily implemented, thus promoting security. For example, the MIL-STD-188-161 B&C standard is a digital image data transmission protocol mandated by the Department of Defense in the design, development and acquisition of its facsimile equipment.
Digital image data transmission over a switched digital network offers the same advantages mentioned above in the civilian sector, and a G4 digital data transmission protocol is being developed. It seems fair to predict that the future of facsimile data transmissions will be strong in digital network.
Unfortunately, conventional facsimile machines do not have the capability to generate ASCII codes for addressing a switched digital network.
Thus, there is a need to provide facsimile machines that generate ASCII code for addressing a switched digital network.
ASCII codes encompass about 128 different codes, and extended ASCII codes encompass 256 different codes. The most popularly used symbols in ASCII code addressing are alpha-numeric (both upper case and lower case), and some special characters such as ":" and "-". Unlike the PSTN network system, addressing of switched digital network can require different lengths of codes. Therefore, it is impractical to represent each ASCII code with a dedicated key.
Thus, for addressing a switched digital network there is a need to represent at least the more popular address codes without imposing undue hardware overhead on the facsimile machines.
The present invention provides facsimile machines and an implementation method meeting both of these needs.

Method and apparatus for a facsimile machine having ASCII code addressing capability


An electrical box assembly for providing electrical service on a brick wall. The assembly includes an electrical outlet box and an adapter. The adapter includes sidewalls defining an internal cavity, an open front, an open rear, and arcuate cable holders for temporarily holding electrical cables until they are routed into the outlet box. Outward extending tabs are provided on the sidewalls of the adapter for enabling secure anchoring of the adapter into a hole in a brick wall. The outlet box includes sidewalls, a hinged cover, and bosses for accepting an electrical device. A fastening arrangement is provided for securing the outlet box to the adapter. Electrical service is provided by mortaring the adapter into a hole in the wall, sliding the outlet box slid into the cavity of the adapter, and securing the outlet box to the adapter with the fastening arrangement.

Electrical outlet boxes are commonly installed on the exterior walls of buildings to provide outdoor electrical service. To accommodate the outlet box, an appropriately sized hole is made in the wall. Making an appropriately sized hole is typically easy to do in exterior walls that are constructed of wood siding, vinyl siding, stucco, or other materials that can be easily cut. After making a hole in the siding and the substrate, wall studs are typically exposed and offer a convenient support to which a conventional outlet box can be secured with mounting fasteners such as nails or screws.
Difficulties arise when trying to install a conventional outlet box on a brick wall. As a result of the substantial thickness of brick walls, a conventional outlet box inserted in an opening in the brick wall typically does not extend beyond the back surface of the bricks. The sidewalls of the conventional electrical box, which typically include the mounting fasteners, are therefore not exposed to the walls studs and cannot be secured in the conventional manner.
As wall studs are not an option for the installation of electrical boxes in brick walls, conventional outlet boxes are typically secured within the brick wall by installing mortar between the sidewalls of the box and the surrounding brick. One problem that arises when securing a conventional outlet box in this manner is that the installation is not aesthetically pleasing. After the installation is complete, the mortar is typically visible around the periphery of the conventional outlet box, thereby detracting from the attractiveness of the installed box.
A further problem arises as the result of the smooth outer sidewalls of the conventional outlet box as there is no structure on the outer surface of the sidewalls for holding the outlet box fast within the mortar.
Another problem arises with conventional flanged outlet boxes. A flange typically extends around the outer periphery of the sidewall at the front edge of the outlet box. Unfortunately the flange interferes with the mortaring operation and makes it difficult to mortar around the box. Additionally, the flange can easily be contaminated with mortar, which, once dried, cannot be easily removed from the flange and therefore detracting from the attractiveness of the conventional outlet box.
What is needed therefore is an electrical box that can be easily installed in an exterior brick wall, is adapted to provide solid anchoring in the wall, eliminates the possibility of mortar contamination on the exterior of the box, and provides an aesthetically pleasing exterior electrical box.

Electrical box and adapter assembly for brick wall installation


A bicycle derailleur comprises a base member adapted to be mounted to a bicycle, a movable member movably coupled to the base member, a chain guide coupled to the movable member for rotation around a rotational axis, a resistance applying element that applies resistance to rotational movement of the chain guide, and a resistance control element. The resistance control element applies a force to the resistance applying element in a direction that is non-parallel with the rotational axis, without any manual operations, to prevent a reduction in the resistance to rotational movement of the chain guide applied by the resistance applying element.

The present invention is directed to bicycle transmission devices and, more particularly, to a bicycle derailleur with rotation resistance.
A typical bicycle derailleur transmission includes a plurality of sprockets that rotate together with a front crank or with a rear wheel, a chain, and a derailleur that selectively shifts the chain among the plurality of sprockets. A typical derailleur includes a base member adapted to be mounted to the bicycle frame, a movable member movably coupled to the base member, and a chain guide coupled to the movable member. The chain guide engages the chain to selectively switch the chain among the plurality of sprockets when the movable member moves relative to the base member.
The chain guide of a rear derailleur ordinarily is rotatably mounted to the movable member and is spring-biased in a clockwise direction (when viewed from the right side of the bicycle) so that the chain guide can take up the slack in the chain when the chain engages the smaller-diameter sprockets. However, during rough riding, bumps and shocks may cause the chain guide to rotate counterclockwise, thereby creating undesirable slack in the chain. To prevent this from occurring, motion resisting structures have been added to some rear derailleurs. An example of a motion resisting structure is disclosed in U.S. Patent Application Publication Number 2009/0054183 A1. As shown therein, a bicycle derailleur comprises a base member adapted to be mounted to a bicycle, a movable member movably coupled to the base member, and a chain guide coupled to the movable member. The chain guide is coupled for rotation around a rotational axis, and a biasing element biases the chain guide in a selected rotational direction around the rotational axis. A resistance applying unit applies a resistance to rotational movement of the chain guide in a direction opposite the selected rotational direction, and an adjusting unit adjusts an amount of resistance applied by the resistance applying unit.

Bicycle derailleur with rotation resistance and resistance control


A system includes a driveline, a user interface, and a control system. The driveline includes an engine, a transmission, and a clutch positioned to selectively couple the engine to the transmission. The user interface is configured to facilitate operator shifting of the transmission. The control system is configured to perform a transmission auto-shift procedure where the control system monitors engine speed of the engine for a period of time following completion of a downshift event with the transmission from a first, higher gear to a second, lower gear, compares the engine speed to at least one speed threshold, and automatically upshifts the transmission from the second, lower gear back to the first, higher gear (i) following expiration of the period of time and/or (ii) in response to the engine speed exceeding the at least one speed threshold during the period of time.

Machinery and vehicles often include drivelines that have an engine, a transmission, and a clutch that selectively couples the engine to the transmission. However, circumstances can arise during a downshift event with the transmission that causes the engine to overspeed (e.g., downshifting while going downhill), which can damage the clutch and/or the transmission.

Method of transmission control in order to protect clutches from damage


A power supply system for supplying electrical power to at least one load includes a base plate, a support rail and a power supply module fastened to the base plate, at least one bus bar module, and a rail mounting device for mounting the bus bar module on the support rail. The rail mounting device includes conductor members for supplying power from the power supply module to bus bars contained within the bus bar modules, respectively. A first plug has contacts that engage contacts of each of the bus bars of the bus bar module via access slots contained in the cover member thereof, thereby to supply three-phase power to a load such, as a motor, via a heavy-duty power switch and a circuit breaker that are both mounted on the base plate, and associated second and third connecting plugs. Single-phase power is supplied to an auxiliary load, such as an electrical appliance, from two or more bus bars of the bus bar module via a fourth plug.

1. Field of the Invention
A power supply system for supplying electrical power to at least one load includes a base plate, a support rail and a power supply module fastened to the base plate, at least one bus bar module, and a rail mounting device for mounting the bus bar module on the support rail. The rail mounting device includes conductor members for supplying power from the power supply module to bus bars contained within the bus bar modules, respectively.
2. Description of the Related Art
It is well known in the patented prior art to mount electrical power distribution components on support rails, as illustrated, for example, by the U.S. patents to Eggert et al U.S. Pat. No. 5,629,831, Schmidt et al No. 5,658,172, Glathe et al No. 5,722,862, Hanning et al No. 6,027,380, Gaertner et al No. 6,120,315, Bernhards et al No. 6,224,429, and Zebermann et al No. 6,241,561, among others.
When supplying power to certain electrical loads such as a three-phase motor, it is customary to feed the power via a heavy-duty power switch and a circuit breaker, overvoltage relay or the like. It is also desirable to supply single-phase or two-phase power to other electrical appliances. One common drawback to the known power distribution systems is that the connections must normally be performed in a complicated labor-intensive manner, and the systems are relatively complex and inflexible.
Accordingly, the present invention was developed to provide an improved power distribution system that is flexible, and is easily and visually assembled from the front of the electrical panel in a simple plug-in manner without the use of tools. The system is designed to provide single-phase, two-phase and/or three-phase power to electrical loads, such as motors and appliances.

Mounting and connecting means for electrical components


A computing device including a wireless communication device, an electrostatic interface, and a processor. The processor may be configured to, via the electrostatic interface, detect a peripheral device proximate the surface. In response to detecting the peripheral device, the processor may be further configured to establish wireless pairing with the peripheral device at least in part by performing an identifier exchange via the electrostatic interface. Subsequently to performing the identifier exchange, establishing wireless pairing may further include generating a temporary key and transmitting the temporary key to the peripheral device via the electrostatic interface. Subsequently to transmitting the temporary key, establishing wireless pairing may further include receiving a first wireless pairing signal from the peripheral device via the wireless communication device. Subsequently to receiving the first wireless pairing signal, establishing wireless pairing may further include transmitting a second wireless pairing signal to the peripheral device via the wireless communication device.

Computing devices are sometimes used with peripheral devices that have onboard computing capabilities with which additional functionality is provided. In order to provide such additional functionality, the peripheral device may be paired with the computing device such that the computing device and the peripheral device are registered with each other as eligible sources and recipients of input and output communications. The computing device and the peripheral device may communicate via a wireless connection when they have been paired. The wireless connection may be an encrypted connection. For example, the pairing between the computing device and the peripheral device may be a BLUETOOTH pairing, and the computing device and the peripheral device may communicate using the BLUETOOTH protocol.

Establishing wireless pairing via electrostatic interface using temporary key


The invention concerns a process, not using chlorate or nitrite, for the production of nickel and manganese containing zinc phosphate films on steel, zinc, and/or zinc alloys by spraying, spray-dipping, and/or dipping, using an aqueous solution. An organic oxidizing agent is added, primarily to depolarize the nascent hydrogen produced.

1. Field of the Invention
This invention relates to a process for phosphating metal surfaces and, more particularly, to a process for the production of manganese- and nickel-containing zinc phosphate coatings on steel, zinc, and/or alloys thereof. These nickel- and manganese-containing zinc phosphate coatings are applied by spray coating, spray/dip coating and dip coating with aqueous solutions.
Processes for phosphating surfaces of iron, steel, zinc and alloys thereof and also aluminum have long been known (Ullmanns Encyklopadie der technischen Chemie, 4th Edition, Vol. 15, pages 686 and 687). The object of phosphating the surfaces mentioned is to increase the adhesive strength of paint films and to improve protection against corrosion.
Acidic zinc and alkali metal phosphate solutions have acquired the greatest significance for phosphating processes. Zinc phosphating baths may contain, for example, monozinc phosphate, free phosphoric acid, zinc nitrate and oxidizing agents as their principal components. The pH value of such solutions is typically in the range from 2.8 to 3.4. The process essentially comprises two reactions, namely: the pickling reaction and the formation of a zinc phosphate coating on the surface to be phosphated.
Manganese-modified zinc phosphate coatings as a primer for modern paints are known from W.A. Roland and K.-H. Gottwald, Metalloberflache, Vol. 42, 1988/6. According to this publication, the use of manganese ions in addition to zinc and nickel ions in low-zinc phosphating processes demonstrably improves protection against corrosion, particularly where surface-treated fine metal sheets are used. The incorporation of manganese in the zinc phosphate coatings leads to relatively small and relatively compact crystals showing increased stability to alkalis. At the same time, the operating range of phosphating baths is increased; even aluminum in conjunction with steel and galvanized steel can be phosphated to form coatings for which the quality standard generally reached is guaranteed.
Phosphating with addition of oxidizing agents has long been practiced in the automotive industry. By contrast, in the cold-forming field, several processes are operated on the iron side, i.e. with an increased content of iron(II) and no addition of oxygen-yielding accelerators.
The disadvantage of conventional phosphating baths lies in particular in the use of nitrites and/or chlorates as accelerators for the phosphating reaction. The nitrous gases formed where nitrites are used are known to have adverse effects on the usefulness of such baths.
2. Description of the Invention
The problem addressed by the present invention was to provide a nitrite-free and also chlorate-free phosphating process which, in particular, causes no so-called "fish eyes". Fish eyes are understood on the one hand to be buildups of zinc salts which are known in English as "white staining" and which are caused by the cleaning solution. On the other hand, crater-like openings known in English as "nubbing" are formed during phosphating. The systems normally used contain chlorate, bromate, nitrate, nitrite, peroxide and/or organic nitro compounds, such as 3-nitrobenzene sulfonate, as accelerators. Hitherto, 3-nitrobenzene sulfonate has generally been used together with chlorate and/or nitrite accelerators. In the presence of nitrate, however, the system normally used, 3-nitrobenzene sulfonic acid/chlorate, produces the above-mentioned fish eyes on electrolytically galvanized steel, so that phosphating normally has to be carried out in the absence of nitrate.

Process not using chlorate or nitrite for the production of nickel and manganese containing zinc phosphate films


A lathe cutting simulation method comprises the steps of preparing workpiece shading drawing data from workpiece shape data, displaying the shape of the workpiece by using the drawing data, computing the positions of the workpiece and tools on the basis of the input workpiece and tools information and updating workpiece shape data, updating the drawing data on the basis of the updated shape data, and displaying the entire workpiece based upon the updated drawing data.

1. Field of the Invention
The present invention relates to a method of simulating the circumstances in which a workpiece is cut by a lathe so that an operator can easily understand the cutting operation.
2. Description of the Related Art
In a conventional method of lathe cutting simulation, for example, as described in Japanese Patent Laid-Open No. 1-92807, the desired shape of a cross section of a workpiece is shown as filled in on a display. The display of the portion to be cut as a tool moves is filled in with a background color, thus displaying changes in the shape of the workpiece.
For example, in FIG. 5, a method of lathe cutting simulation is performed by a method wherein a workpiece 1 is shown as seen from a direction perpendicular to the lathe's main axis 10 and the main axis of a cutting tool (not shown). FIG. 6 shows an example of a workpiece 11 and a tool 12 in a conventional method of simulated cutting by a lathe.
The conventional method will now be explained with reference to a flowchart in FIG. 7. In step S1, shaping data of the shape of a workpiece and tools are initialized. In a subsequent step S8, the workpiece is filled in and displayed. Next, in step S3, positional data of the tools and workpiece are input. In step S4, a check is made to determine whether or not all of the positional data has been input. When the input of the data has been completed, the process ends. On the other hand, when it has not been completed, a cutting shape is prepared on the basis of the input positional data in step S5. In a subsequent step S9, the cut portion is filled in with a background color. The simulated cutting is made possible by repeating these steps S3, S4, S5, and S9 at high speed.
In such a conventional method, however, the shape of a workpiece after it has been cut must be recognized from the shape of the cross section thereof. It is sometimes difficult to recognize the shape when there is a complex machining operation. Moreover, it may be difficult for a non-experienced operator to recognize the correct shape.


Formed in a part of the base region is an impurity diffusion region extending in a vertical direction and having an impurity concentration lower than that in the other portion of the base region. By the formation of the impurity diffusion region, the depletion layer is extended toward the base region so as to improve the breakdown voltage. The impurity diffusion region is formed by forming a trench in a part of the base region, a conductive film being buried in the trench, followed by introducing by ion implantation an impurity of the conductivity type equal to that in the base region into the side wall and the bottom of the trench in a concentration lower than that in the base region and subsequently diffusing the implanted impurity ions. The impurity diffusion region thus formed permits relaxing the electric field concentration on the corner portion of the gate trench and on the extended portion of the base region so as to improve the breakdown voltage.

This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2000-093461, filed Mar. 30, 2000, the entire contents of which are incorporated herein by reference.
The present invention relates to a semiconductor device and a method of manufacturing the same, particularly, to a semiconductor device having a high breakdown voltage and a method of manufacturing the particular semiconductor device.
FIG. 7 is a cross sectional view showing a conventional power (high breakdown voltage) vertical type MOSFET having a trench gate structure. A trench gate structure that permits improving the channel density is widely employed in a power vertical MOSFET in order to improve the on-voltage characteristics. As shown in FIG. 7, an N-type epitaxial semiconductor layer is formed on a first main surface (upper surface) of an N-type silicon semiconductor substrate 111. Formed in the N-type epitaxial semiconductor layer are an N-type drain region (Nxe2x88x92-type drain region) 106, a P-type base region 105, and an N-type source region (N+-type source region) 104. The P-type base region 105 is formed in a surface region of the N-type drain region 106. The N-type source region 104 is formed in a surface region of the P-type base region 105. Each of the P-type base region 105 and the N-type source region 104 is formed by an impurity diffusion. A gate trench is formed in a manner to extend from the surface of the N-type source region 104 through the N-type source region 104 and the P-type base region 105 so as to reach the N-type drain region 106. A gate insulating film 107 consisting of, for example, a silicon oxide film is formed on the side wall and the bottom of the gate trench. A gate electrode 108 made of, for example, a polycrystalline silicon (polysilicon) is buried in the gate trench. The gate insulating film 107 and the gate electrode 108 are covered with an interlayer insulating film 103 consisting of, for example, a silicon oxide film. A barrier metal layer 102 is formed on the entire substrate surface including the interlayer insulating film 103. A source electrode 101 consisting of a metal electrode such as aluminum is formed on the source region 104 and the base region 105 with the barrier metal layer 102 interposed therebetween, and the source region 104 and the base region 105 are electrically connected to each other. A drain electrode 112, which is a metal electrode, is formed on a second main surface (back surface) of the semiconductor substrate 111. FIG. 7 shows a unit cell portion of a semiconductor device, which corresponds to a unit cell portion of a semiconductor device in FIG. 9, as represented by region A in FIG. 9. Incidentally, the semiconductor device shown in FIG. 9 is for the exemplifying purpose. Therefore, the construction shown in FIG. 7 is not necessarily equal to the construction of the unit cell portion of the semiconductor device shown in FIG. 9. Similarly, FIG. 8 shows a unit cell portion of another conventional semiconductor device.
In the conventional power vertical MOSFET having a trench gate structure as shown in FIG. 7, the impurity concentration is increased in the epitaxial silicon semiconductor layer 106 formed on the silicon semiconductor substrate 111 in order to lower the on-voltage. A depletion layer is generated if a reversed bias is applied between the source electrode and the drain electrode. If the impurity concentration in the epitaxial silicon semiconductor layer 106 is increased, a depletion layer 113 is generated as shown in the drawing. As denoted by arrows in the drawing, the electric field is concentrated in the corner portion of the trench because of the presence of the depletion layer. It should be noted that the Vdss breakdown voltage is deteriorated by the electric field concentration occurring in the corner portion of the trench.
FIG. 8 is a cross sectional view showing a conventional power MOSFET of a planar structure. As shown in the drawing, an N-type epitaxial semiconductor layer (N-type drain region) 106 is formed on a first main surface (upper surface) of an N-type silicon semiconductor substrate 111. A P-type base layer 105 is formed in a surface region of the N-type drain region 106. Also, an N-type source region 104 is formed in a surface region of the P-type base region 105. A gate insulating film 107 such as a silicon oxide film is formed on the N-type source region 104, the P-type base region 105 and the N-type drain region 106 except the region where a source electrode is to be formed. Also, a gate electrode 108 made of, for example, polysilicon is formed on the gate insulating film 107. The gate insulating film 107 and the gate electrode 108 are covered with an interlayer insulating film 103 such as a silicon oxide film. A source electrode 101, which is a metal electrode made of, for example, aluminum, is formed on the N-type source region 104 and the P-type base region 105 so as to electrically connect the N-type source region 104 to the P-type base region 105. Further, a drain electrode 112 is formed on a second main surface (back surface) of the semiconductor substrate 111.
In the conventional power MOSFET of the planar structure shown in FIG. 8, the impurity concentration is also increased in the epitaxial silicon semiconductor layer 106 formed on the silicon semiconductor substrate 111 in order to lower the on-voltage, as in the power vertical MOSFET of the trench gate structure shown in FIG. 7. A depletion layer is generated when a reverse bias is applied between the source electrode and the drain electrode. If the impurity concentration is increased in the epitaxial silicon semiconductor layer 106, the electric field is concentrated in the extending portion of the P-type base region 105. It should be noted that the Vdss breakdown voltage is deteriorated by the electric field concentration taking place in the extending portion of the P-type base region 105.
An object of the present invention, which has been achieved in view of the situation described above, is to provide a semiconductor device in which the electric field concentration is relaxed in the corner portion of the trench gate or in the extending portion of the base region so as to improve the breakdown voltage and a method manufacturing the particular semiconductor device.
The present invention is featured in that formed in a part of the base region is an impurity diffusion region extending in a vertical direction of the semiconductor substrate and having an impurity concentration lower than that in the other portion of the base region. The impurity concentration of the impurity diffusion region is an average value of the concentration of the impurities diffused in the base region excluding the extending region. By forming the impurity diffusion region of a low impurity concentration, it is possible to extend the depletion layer toward the base region so as to improve the breakdown voltage. In the present invention, a trench is formed in a part of the base region, and an impurity of the conductivity type equal to that of the base region is introduced into the side wall and the bottom portion of the trench by ion implantation in a concentration lower than that in the base region, followed by diffusing the implanted impurity so as to form the impurity diffusion region of the low impurity concentration.
According to a first aspect of the present invention, there is provided a semiconductor device, comprising: a semiconductor substrate; a semiconductor layer of a first conductivity type formed on one main surface region of the semiconductor substrate; a drain region of the first conductivity type formed in the semiconductor layer of the first conductivity type; a base region of a second conductivity type formed in a surface region of the drain region; a source region of the first conductivity type formed in a surface region of the base region; a trench having a conductive layer and/or an insulating layer buried therein and extending from the surface of the base region through the base region to reach an inner region of the drain region; an impurity diffusion region of the second conductivity type formed in the periphery of the side wall of that portion of the trench which is positioned within the drain region and having an impurity concentration lower than that in the base region; a gate insulating film formed to cover a part of the surfaces of the drain region, the base region and the source region; and a gate electrode formed on the gate insulating film.
In the semiconductor device according to the first aspect of the present invention, the semiconductor substrate may be of the first conductivity type.
In the semiconductor device according to the first aspect of the present invention, the semiconductor substrate may be of the second conductivity type.
According to a second aspect of the present invention, there is provided a semiconductor device, comprising: a semiconductor substrate; a semiconductor layer of a first conductivity type formed on one main surface region of the semiconductor substrate; a drain region of the first conductivity type formed in the semiconductor layer of the first conductivity type; a base region of a second conductivity type formed in a surface region of the drain region; a source region of the first conductivity type formed in a surface region of the base region; a first trench having a conductive layer and/or an insulating layer buried therein and extending from the surface of the base region through the base region to reach an inner region of the drain region; an impurity diffusion region of the second conductivity type formed in the periphery of the side wall of that portion of the first trench which is positioned within the drain region and having an impurity concentration lower than that in the base region; a second trench extending from the surface of the source region or from the surface of that portion of the base region which is contiguous to the source region to reach an inner region of the drain region; a gate insulating film formed in the side wall and the bottom region of the second trench; and a gate electrode buried in the second trench in a manner to cover the gate insulating film.
In the semiconductor device according to the second aspect of the present invention, the semiconductor substrate may be of the first conductivity type.
In the semiconductor device according to the second aspect of the present invention, the semiconductor substrate may be of the second conductivity type.
In the semiconductor device according to the second aspect of the present invention, the depth of the first trench from the surface of the base region may be larger than that of the second trench from the surface of the source region or from the surface of that portion of the base region which is contiguous to the source region.
In the semiconductor device according to the second aspect of the present invention, in which the first trench is deeper than the second trench, the semiconductor substrate may be of the first conductivity type.
In the semiconductor device according to the second aspect of the present invention, in which the first trench is deeper than the second trench, the semiconductor substrate may be of the second conductivity type.
In the semiconductor device according to the second aspect of the present invention, in which the first trench is deeper than the second trench and the semiconductor substrate is of the second conductivity type, a buffer layer formed of a semiconductor layer of the first conductivity type having an impurity concentration higher than that in the semiconductor layer of the first conductivity type may be formed between the semiconductor substrate and the semiconductor layer of the first conductivity type.
According to a third aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: forming a semiconductor layer of a first conductivity type on one main surface of a semiconductor substrate; forming a base region of a second conductivity type in a surface region of a drain region of the first conductivity type formed in the semiconductor layer of the first conductivity type; forming a source region of the first conductivity type in a surface region of the base region; forming a trench extending from the surface of the base region through the base region to reach an inner region of the drain region; forming an impurity diffusion region of the second conductivity type having an impurity concentration lower than that in the base region in the periphery of the side wall of that portion of the trench which is positioned within the drain region; burying a conductive layer and/or an insulating layer within the trench; forming a gate insulating film in a manner to cover a part of the surfaces of the drain region, the base region and the source region; and forming a gate electrode on the gate insulating film.
In the method of manufacturing a semiconductor device according to the third aspect of the present invention, the impurity diffusion region of the second conductivity type may be formed by implanting ions of the impurity of the second conductivity type.
According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: forming a semiconductor layer of a first conductivity type on one main surface of a semiconductor substrate; forming a base region of a second conductivity type in a surface region of the drain region of the first conductivity type formed in the semiconductor layer of the first conductivity type; forming a source region of the first conductivity type in a surface of the base region; forming a first trench extending from the surface of the base region through the base region to reach an inner region of the drain region; forming an impurity diffusion region of the second conductivity type having an impurity concentration lower than that in the base region in the periphery of the side wall of that portion of the first trench which is positioned within the drain region; burying a conductive layer and/or an insulating layer within the first trench; forming a second trench extending from the surface of the source region or from the surface of that portion of the base region which is contiguous to the source region to reach an inner region of the drain region; forming a gate insulating film on the side wall and the bottom surface of the second trench; and forming a gate electrode within the second trench in a manner to cover the gate insulating film.
In the method of manufacturing a semiconductor device according to the fourth aspect of the present invention, the depth of the first trench from the surface of the base region may be larger than that of the second trench from the surface of the source region or from the surface of that portion of the base region which is contiguous to the source region.
Further, in the method of manufacturing a semiconductor device according to the fourth aspect of the present invention, the impurity diffusion region of the second conductivity type may be formed by ion implantation of an impurity of the second conductivity type.
Additional objects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention may be realized and obtained by means of the instrumentalities and combinations particularly pointed out hereinafter.


Systems and techniques for providing data to a user in the form of perceived light signals caused by transcutaneous stimulation of the user's optic nerve. User output data, suitably representing data collected, generated, or processed by a data processing device, is used to generate user output data. The user output data is converted to representations corresponding to light signals, and control functions are performed to cause generation of electrical impulses which, when applied to the skin of a user, stimulate the optic nerve of the user so as to cause the user to perceive the light signals.

Present day electronic devices process and generate substantial amounts of data, and are able to deliver data generated by the devices themselves as well as data sensed and processed by the devices. Data is typically delivered to users in the form of visual displays, and is also frequently delivered audibly. Visual displays are naturally of little value to visually impaired users, particularly users who are severely visually impaired, and audible displays are similarly of little value to hearing-impaired users. In addition, displays of electronic devices must frequently compete with many other visual and audible stimuli, even for users with normal sight and hearing. Considerable efforts have been made to provide visual information to visually impaired persons, and it is easy to understand how the lives of such persons might be improved by technology that could let them see the world around them. Devices that stimulate the visual cortex and the optic nerve typically involve implants or other invasive techniques.

Methods and apparatus for representing user output data by transcutaneous stimulation of a user's optic nerve


Disclosed is a sensor for detecting a target material. The sensor includes a ferromagnetic metal and a molecular recognition reagent coupled to the ferromagnetic metal. The molecular recognition reagent is operable to expand upon exposure to vapor or liquid from the target material such that the molecular recognition reagent changes a tensile stress upon the ferromagnetic metal. The target material is detected based on changes in the magnetic switching characteristics of the ferromagnetic metal caused by the changes in the tensile stress.

This disclosure relates to the field of sensors for detecting various target materials. More particularly, this disclosure relates to an inexpensive, highly sensitive sensor having a sensing element capable of being embedded in unobtrusive objects and/or interrogated wirelessly that can be configured to detect a wide range of target materials. Such a sensor is lacking in the prior art.

This patent is subject to a terminal disclaimer.

University of Tennessee Research Foundation


A novel low mass transducer for bonding machines comprises a transducer generator which mounts on or is coupled to a bonding tool of the type used for ball bonding, wedge bonding and TAB bonding. The preferred embodiment transducer comprises a magnetostrictive or piezoelectric element which mount on the outside surface of the bonding tools used in a bonding operation, thus eliminating convention transducers which also serve as a bonding tool holder. The present invention bonding tool serves as the base or mount for a transducer made in the form of a sleeve or tube which mounts on or couples to the bonding tool. The novel transducer/bonding tool or transducers also serve as a sensor which can monitor the quality of a bond while it is being made.

1. Field of the Invention
The present invention relates to bonding tools for fine wire bonders. More particularly, the present invention relates to a novel ultrasonic transducer or sensor which is coupled to a fine wire bonding tool for use in a fine wire bonding machine.
2. Description of the Prior Art
Automatic wire bonders are well known and are used to make fine wire interconnections between a pad (or electrode) on a semiconductor device to a lead on a lead frame (or carrier). The bonding tools used in such machines are generally referred to as capillaries, used for ball bonding, or wedges used for wedge bonding. Both types of tools are most commonly mounted in ultrasonic transducers which assist in a scrubbing action while making bonds to the pads or leads to effect consistent bonds faster than if no ultrasonic assist had been used.
The bonding heads used to hold the prior art type transducers are quite heavy because they usually include wire clamps and a motor for effecting vertical or Z-motion of the bonding tool. Typical prior art bonding heads for bonding machines are shown in U.S. Pat. Nos. 4,653,681 and 5,360,155 which are incorporated herein by reference. The latter referenced patent employs a miniature piezoelectric vibrator element mounted in a miniature bonding arm which holds a conventional capillary. This piezoelectric element alone weighs three grams and it is estimated that the mounting arm weighs in excess of 30 grams. The bonding head system is mounted on an X-Y table which includes a mechanical actuating system that may weight several kilograms.
These prior art referenced bonding heads impose a large mass on the X-Y positioning motors, which in turn limits fast positioning of the bonding tool. It would be desirable to eliminate components which represent mass that is imposed on the X, Y and Z drive motors so that positioning of the bonding tool may be made faster with greater accuracy and less tendency of overshoot.
It would be desirable to provide a low mass transducer for bonding tools which permits faster positioning as well as lowering the mass of the bonding head components in a bonding machine.


A multi-terrain amphibious vehicle adapted for travel across surfaces of various type and attributes is provided. The vehicle includes a chassis assembly (10) which extends in a longitudinal direction; a plurality of propulsion members rotatably coupled to that chassis assembly for propelling the vehicle across a given surface; and, a control mechanism for controlling the rotational velocities and phases of the propulsion members. The propulsion members each rotate about an axis that extends in a direction substantially normal to the longitudinal direction. Each propulsion member includes, for engaging the given surface, at least a first perimeter segment and a second perimeter segment coaxially disposed in angularly offset manner about its rotation axis. The first perimeter segment has an arcuate contour and extends radially farther from the rotation axis than does the second perimeter segment. In operation, the propulsion members are cooperatively rotated to collectively impart a predetermined speed and direction of travel to the vehicle.

1. Field of the Invention
The subject multi-terrain amphibious vehicle is generally directed to vehicles capable of traveling across surfaces of various type. More specifically, the multi-terrain amphibious vehicle is one that may efficiently propel itself across water surfaces and effectively traverse both even and uneven terrain without substantial loss of traction. The subject multi-terrain amphibious vehicle is, moreover, one which is capable of crossing from one surface type onto another without undue interruption during the transition.
In many applications of surface vehicles, both military and non-military, the vehicle is likely to encounter widely varied types of surfaces in transporting its payload. It may not only encounter both water and land surfaces, it may encounter land surfaces of greatly varied terrain and surface characteristics. In most cases, time and other resource constraints do not permit avoidance measures by which the vehicle may circumvent or otherwise avoid operation on surface types for which the vehicle is not particularly suited. Consequently, the unexpected characteristics of the surface to be traversed often make for insurmountable obstacles which delay, if not altogether halt, the vehicle's mission. Even where the vehicle is capable of traversing the surface types encountered, efficient traversal may not be possible because significant reconfiguration of one or more parts of the vehicle may be necessary if it is to continue its travel across a surface of significantly different attributes.
Accordingly, there is a need for a versatile vehicle which is equally adept at traveling not only through both water and land surfaces, but also land surfaces of widely varied attributes such as evenness, hardness, and solidity. There is a need for a versatile vehicle also capable of overcoming abrupt transitions in surface characteristics without the accompanying need to incur undue interruption in the vehicle's operation.
2. Prior Art
Amphibious vehicles capable of traveling across both water and land surfaces are known in the prior art, as are multi-terrain vehicles capable of traveling across land surfaces of more than one identifiable surface or terrain characteristic. For instance, hover-type vehicles are known which generate and maintain therebeneath a uniformly distributed cushion of air which enables it to glide over relatively smooth water and land surfaces. Where surface characteristics are such that the air cushion formed beneath the vehicle is sufficiently disrupted, however, suspension of the vehicle over the underlying surface would be disturbed, causing obstruction of the vehicle's travel.
Other types of amphibious vehicles are known, particularly those employed for military applications. One type of such vehicles is the class of payload transport vehicles functionally configured with hulled bottoms, much like typical waterborne surface vessels. Those vehicles are constructed with wheels mounted to extend from their hulled bottoms which enable them to roll along land surfaces. As with hover-type crafts, these vehicles are extremely limited in their ability to traverse any land surface beyond the flattest and smoothest of surfaces encountered. Their travel over muddy, rocky, snow-covered, or other types of surfaces potentially encountered in typical combat situations is virtually impossible.
High traction vehicles specifically designed for operation on such difficult-to-traverse surfaces are also known in the prior art. Those vehicles are of the tracklaying type employing a pair of multi-linked tracks which are advanced through an endless loop by a plurality of drive wheels. The tracks grip the underlying surface such that its linear advancement through the endless loop about the drive wheels causes the vehicle's advancement over the land surface. While tracks are effective in providing traction over rough, irregular surfaces not readily passable to simple wheeled vehicles, the extraneous friction inherently resulting from their operation makes their utilization on smooth, flat surfaces extremely inefficient. Moreover, as the durability and strength required of tracks demand in most cases that they be fabricated from steel, iron, or other hard and dense materials, tracks have been found to be quite destructive to paved road surfaces. As for water-borne applications or any other applications requiring some measure of buoyancy in the vehicle, tracklaying vehicles have, for self-evident reasons failed to find significant utility.
There is, therefore, no vehicle known in the prior art capable of efficiently propelling itself across water surfaces as well as land surfaces of various terrain and surface characteristics. There is also no vehicle known in the prior art capable of overcoming significant transitions in surface attributes without prior preparation that demands substantial mechanical reconfiguration and necessitates interruption of the vehicle's travel.


An organic thin film electroluminescent device has at least an organic thin film provided between an anode and a cathode,. wherein the organic thin film includes a compound which is represented by a general formula (I): ##STR1## where Ar.sup.1, Ar.sup.2, Ar.sup.3, Ar.sup.4, Ar.sup.5, and Ar.sup.6 are selected from the group consisting of non-substituted phenyl groups and phenyl groups substituted with at least a substituent which is selected from the group consisting of alkyl groups having 1-4 carbon atoms, alkoxyl groups having 1-4 carbon atoms, amino groups, alkyl amino groups having 1-4 carbon atoms, dialkyl amino groups having 1-4 carbon atoms, alkyl thio groups having 1-4 carbon atoms, halogens, and halogeno alkyl groups having 1-4 carbon atoms, and R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, and R.sup.6 are selected from the group consisting of hydrogen and methyl groups.

The present invention relates to a light-emitting organic thin film electroluminescent device usable for a flat light emission panel and display.
The organic thin film electroluminescent device is attracted as a self-light-emitting plane display. The organic thin film electroluminescent device has laminations of organic layers which have different functions for the purpose of remarkable improvement in emission efficiency. The organic thin film electroluminescent device may show a high brightness of luminescence by a voltage which is slightly less than 10V. This organic thin film electroluminescent device is, for example, disclosed in Applied Physics Letters Vol. 51, 1987, p. 913 and Vol. 56, 1990, p. 799. The most of the organic thin film electroluminescent devices has a multi-layered structure of anode/hole transport region/electroluminescent emitter region/electron transport region/cathode. Any one or both of the hole transport region and the electron transport region might not be provided. The hole transport region may comprises a first hole transport layer which allows a hole injection from the anode into the electroluminescent emitter region, and a second hole transport layer which serves as a blocking layer against electrons and excitons supplied from the electroluminescent emitter region.
The hole transport region of the conventional organic thin film electroluminescent device may mostly comprise an aromatic amine formed by evaporation. Particularly, 1,1'-bis(4-diparatrilaminophenyl)cyclohexene or N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine are preferable for materials of the evaporated film due to those excellent hole injection property and good film growth property. Those evaporated film is uniform immediately after the evaporation. After a few days, however, cohesion may appear. This cohesion deteriorates the properties of the device. This is disclosed in Applied Physics Letters, Vol. 68, 1996, p. 1787.
In Japanese laid-open patent publication No. 57-51781, it is disclosed that a porphyrin compound is used for the hole transport layer in the organic thin film electroluminescent device. After the organic thin film electroluminescent device has been formed, then the hole transport layer shows crystallization and cohesion which causes deterioration in property of the device.
In Japanese laid-open patent publication No. 7-110940 as well as Applied Physics Letters Vol. 65, 1994, p. 807, it is disclosed to use ternary amine of Star-Burst type for the hole transport layer. It is, however, difficult to obtain a sufficiently long durability of highly bright luminescence.
In Japanese laid-open patent publication No. 63-295695, it is disclosed that, in order to reduce pin holes for improvement in stability of the organic thin film electroluminescent device, the hole transport layer has a double-layered structure of a first layer of porphyrin based compound for allowing hole injection from the anode and a second layer of aromatic ternary amine. It is, however, difficult to obtain a sufficient improvement in stability of the organic thin film electroluminescent device.
As described above, the organic thin film electroluminescent device shows a high brightness of luminance but has a shorter life-time than other luminescent devices. This short life-time makes it difficult to make the organic thin film electroluminescent device practicable.
In the above circumstances, it had been required to develop a novel organic thin film electroluminescent device having a longer life-time than the conventional ones for enabling the organic thin film electroluminescent device practicable.

Green light emitting organic thin film electroluminescent device