The invention provides a method of synthesizing oligonucleotide N3'.fwdarw.P5' phosphoramidates using an amine-exchange reaction of phosphoramidites in which a -deprotected 3'-amino group of a solid phase supported oligonucleotide chain is exhanged for the amino portion of a 5'-phosphoramidite of an incoming monomer which has a protected 3'-amino group. The resulting internucleotide phosphoramidite linkage is then oxidized to form a stable protected phosphoramidate linkage. The method of the invention greatly improves product yields and reduces reagent usage over currently available methods for synthesizing the above class of compound.

Nucleic acid polymer chemistry has played a crucial role in many developing technologies in the pharmaceutical, diagnostic, and analytical fields, and more particularly in the subfields of antisense and anti-gene therapeutics, combinatorial chemistry, branched DNA signal amplification, and array-based DNA diagnostics and analysis e.g. Uhlmann and Peyman, Chemical Reviews, 90: 543-584 (1990); Milligan et al, J. Med. Chem. 36: 1923-1937 (1993); Mesmaeker et al, Current Opinion in Structural Biology, 5: 343-355 (1995); Thuong et al, Angew. Chem. Int. Ed. Engl., 32: 666-690 (1993); Brenner et al, Proc. Natl. Acad. Sci., 89: 5381-5383 (1992); Gold et al, Ann. Rev. Biochem., 64: 763-797 (1995); Gallop et al, J. Med. Chem. 37: 1233-1258 (1994); Gordon et al, J. Med. Chem. 37: 1385-1401 (1994); Gryaznov, International application PCT/US94/07557; Urdea et al, U.S. Pat. No. 5,124,246; Southern et al, Genomics, 13: 1008-1017 (1992); McGall et al, U.S. Pat. No. 5,412,087; Fodor et al, U.S. Pat. No. 5,424,186; Pirrung et al, U.S. Pat. No. 5,405,783; and the like.
Much of this chemistry has been directed to improving the binding strength, specificity, and nuclease resistance of natural nucleic acid polymers, such as DNA. Unfortunately, improvements in one property, such as nuclease resistance, often involve trade-offs against other properties, such as binding strength. Examples of such trade-offs abound: peptide nucleic acids (PNAs) display good nuclease resistance and binding strength, but have reduced cellular uptake in test cultures, e.g. Hanvey et al, Science, 258: 1481-1485 (1992); phosphorothioates display good nuclease resistance and solubility, but are typically synthesized as P-chiral mixtures and display several sequence-non-specific biological effects, e.g. Stein et al, Science, 261: 1004-1012 (1993); methylphosphonates display good nuclease resistance and cellular uptake, but are also typically synthesized as P-chiral mixtures and have reduce duplex stability, e.g. Mesmaeker et al (cited above); and so on.
Recently, a new class of oligonucleotide analog has been developed having so-called N3'.fwdarw.P5' phosphoramidate internucleoside linkages which display very favorable binding properties, nuclease resistance, and solubility, Gryaznov and Letsinger, Nucleic Acids Research, 20: 3403-3409 (1992); Chen et al, Nucleic Acids Research, 23: 2661-2668 (1995); Gryaznov et al, Proc. Natl. Acad. Sci., 92: 5798-5802 (1995); and Gryaznov et al, J. Am. Chem. Soc., 116: 3143-3144(1994). Unfortunately, low synthesis yields of these compounds with published protocols has inhibited their commercial application.
The utility of this new class of oligonucleotide analog would be significantly increased if modifications and new synthesis approaches could be found that would improve synthesis yields without a concomitant loss in any other of its other favorable properties outlined above.

Synthons for synthesis of oligonucleotide N3-P5 phosphoramidates


Described are methods for making, and resultant structures of, a field emission display with soft luminescence and a comfortable image for a viewer of the display. The field emission display is formed with a baseplate and an opposing face plate. Field emission microtips are formed in openings in a conductive and insulating layer on the baseplate. An anode is formed on either the faceplate, or on the conductive layer surrounding each opening. Phosphorescent material is formed over the anode, A blocking layer is formed between the phosphor and the faceplate, such that during operation of the display direct light emission from the phosphor is blocked, resulting in indirect phosphorescence and a more comfortable display image. An optional reflective layer may be added over the conductive layer to increase phosphorescence.

1. Field of the Invention
The invention relates to field emission flat panel displays, and more particularly to structures and methods of manufacturing field emission displays that provide soft luminescence for improved end-user viewing characteristics.
2. Description of the Related Art
In display technology, there is an increasing need for flat, thin, lightweight displays to replace the traditional cathode ray tube (CRT) device. One of several technologies that provide this capability is field emission displays (FED). An array of very small, conical emitters is manufactured, typically on a semiconductor substrate, and can be addressed via a matrix of columns and lines. These emitters are connected to a cathode, and surrounded by a gate. When the proper voltages are applied to the cathode and gate, electrons are emitted and attracted to the anode, on which there is cathodoluminescent material that emits light when excited by the emitted electrons, thus providing the display element. The anode is typically mounted in close proximity to the cathode/gate/emitter structure and the area in between is typically a vacuum.
FIG. 1 is a cross-sectional view of a typical field emission display of the related art. Row electrodes 12 are formed on an insulating baseplate 10, and have emitter tips 14 mounted thereon. The emitters are separated by insulating layer 16. A column electrode 18, or gate, with openings for the emitter tips, is formed on the insulating layer 16 and is formed perpendicular to the row electrodes. When electrons are emitted, they are attracted to conductive anode 22 and upon striking phosphor dot 20, light is emitted, which can be viewed through the transparent faceplate 24. However, the phosphorescence produced by this structure is not comfortable for the viewer of the display, since the light emission is directly at the viewer and the phosphorescence intensity distribution of each pixel is not uniform.
U.S. Pat. No. 4,908,539 to Meyer discloses a change in the location of the phosphor 30, from the faceplate to on top of the column electrode 18, as shown in FIG. 2. This eliminates the light loss in the FIG. 1 structure that occurs as the emitted light passes through the phosphor. Furthermore, alignment of faceplate and baseplate is no longer critical. However, this structure also suffers from the problem of non-uniformity of phosphorescence intensity.

Soft luminescence of field emission display

Industrial Technology Research Institute


An apparatus for monitoring the rotational speed in a wind energy plant, with a rotor shaft which is driven by the rotor and runs out into a gear unit, and with a generator shaft, which connects an output shaft of the gear unit with a generator/converter unit, characterized by a first rotational speed detection unit on the rotor shaft and a second rotational speed detection unit on the generator shaft, wherein each rotational speed detection unit has at least two rotational speed sensors working independently from each other, an analyzing unit for the rotational speed, to which the measured signals of the rotational speed detection units are applied and which generates an error signal for a rotational overspeed when a certain maximum value for the rotational speed is exceeded.

The present invention is related to an apparatus for monitoring the rotational speed in a wind energy plant. Such an apparatus is sometimes also called a rotational speed monitor.
The drive train of a wind energy plant begins with a rotor which carries the rotor blades. The rotor is connected to a rotor shaft, which is coupled to a gearbox. The rotor shaft is sometimes also called a slow shaft. The output shaft of the gearbox runs out into the generator as the generator shaft and is also called the rapid shaft. In known wind energy plants, a toothed disk is arranged on the rotor shaft, which generates pulses via inductive pulse transmitters, the frequency of which is proportional to the rotational speed of the rotor shaft. The pulses are analysed by an electronic module. Also, the sampled pulses are converted into a current signal via a frequency/current converter (f-I converter) and reach a central control unit of the wind energy plant. In the central control unit of the wind energy plant, a critical cut-off rotational speed is filed. When the rotational speed values of the rotor shaft are above the filed cut-off rotational speed, controlled setback of the wind energy plant takes place.
It has proven to be a drawback of the apparatus for monitoring the rotational speed that the rotational speed monitoring does not have sufficient functional security, in particular, it does not comply with a safety integrity level which is required for security directed implementations according to IEC 61508.
The present invention is based on the objective to provide an apparatus for monitoring the rotational speed which provides sufficient functional security for the implementation in a wind energy plant with means which are as simple as possible.

Apparatus for monitoring the rotational speed in a wind energy plant


The present invention relates to an auto-restore method for a powered device by using a computer device to build a detecting/responding packet in an Ethernet exchanger, and the Ethernet exchange can mutually transmit the packet with the powered device. If the Ethernet exchanger fails to receive a responding packet from the powered device in the predetermined time and the predetermined value, the Ethernet exchanger will terminate power supply by the Ethernet and reset the powered device, and the powered device will be restored automatically accordingly. If the powered device still cannot function normally after few times of reset, the Ethernet exchanger will shutdown the power supplied by the Ethernet and transmits an alarm signal to the computer device. Thus not only the consumption of the system and safety risk are reduced, but also promptly maintained, to increase the reliability, and save the supervision time of the operator and the cost of onsite maintenance. Besides, the prompt maintenance can also reduce the possible damage occurred during the breakdown of the powered device.

1. Field of the Invention
The present invention relates to a method for auto power restoration. More particularly to a method using an Ethernet exchanger and a powered device to mutually transmit a packet for quickly notifying whether the powered device operates normally, and automatic repair when the powered device is out of order, thus reducing consumption of the system and risking safety, as well as promptly maintain, increase the reliability, and save supervision time of the operator and reduce the cost of onsite maintenance.
2. Description of Related Art
Computers are popularly used everywhere due to the rapidly developed computer technology and internet. The features of the internet enable the user to search a variety of information over the internet in daily life for learning, work and entertainment. In such condition, the communication between people is usually conducted by mutually sending messages on the internet. The communication bridge between the computer and the outer network majorly is the component of the Ethernet, for example RJ45. However, the wired Ethernet device takes the external independent power to supply to a powered device, for example, computer, internet phone, wireless base station, webcam or hub; such method restricts the power position to the above devices, and it is unable to operate when there is lack of power supply. A solution to this defect is to use the power over Ethernet (POE) the 802.3af standard set by IEEE, this technology needs no change in the original structure of the Ethernet cable, only need loading an Ethernet power supply chip in the Ethernet device to smoothly separate a part of the power from the Ethernet to fill into the vacancy for power supply.
Therefore, in the usual situation, an Ethernet exchanger with the Ethernet power supplying function can continue to supply power to the powered device. When an error occurs to the powered device, for example, crash or hardware damage, to disable the device, if the Ethernet exchanger is still supplying the power, the minor result would lead to losing the system efficiency and the severe result would cause a short circuit to induce danger to the public security.
The present available solution is that the manager should personally discover problems occurred to the powered device and manually stops the power supply via the webpage. But this method can not notify the manager of the unusual status on time, and the reaction time is delayed when the problem is personally discovered. The system manager receives the powered device disabling message on time not only consuming the system resources of the corporation, but also endangering operators' safety. On the other hand, an alternative to the solution is to build hardware circuit detecting device in the Ethernet exchanger, for example, an AC disconnect or the DC disconnect. When the hardware circuit detects the current required from the powered device lowering to a certain predetermined level, the power supply will be disconnected at a predetermined time. Although the technique has the active power disconnection function, but the manager still has to be notified for executing repair work. Besides, the time for checking and handling will be more if the manager can not find out whether the software or the hardware damage occurred in the powered device.
The passive solution is insufficient. When the powered device can not receive power supply, the powered device will not be able to react to the situation if the manager is unable to find out the problem on time. It can cause other possible severe damage like burglary during time of mal-function of the webcam if such situation occurs in the webcam of the bank or the manufacturing plant.
The above described method to view webpage by using the explorer indeed have defects, therefore, how to solve the above defects has become the important issue for the suppliers in the field.


The present invention relates to methods of improving the fabrication of interconnect structures of the single or dual damascene type, in which there is no problem of hard mask retention or of conductivity between the metal lines after fabrication. The methods of the present invention include at least steps of chemical mechanical polishing and UV exposure or chemical repair treatment which steps improve the reliability of the interconnect structure formed. The present invention also relates to an interconnect structure which include a porous ultra low k dielectric of the SiCOH type in which the surface layer thereof has been modified so as to form a gradient layer that has both a density gradient and a C content gradient.

Generally, semiconductor devices include a plurality of circuits, which form an IC fabricated on a single silicon crystal substrate. A complex network of signal paths will normally be routed to connect the circuit elements distributed on the surface of the substrate. Efficient routing of these signals across the device requires the formation of multi-level or multi-layered interconnection schemes, such as, dual damascene wiring structures based on copper or other conductive metals. Copper based interconnects are desirable due to their efficacy in providing high speed signal transmission between large numbers of transistors on a complex semiconductor chip.
Within the interconnect structure, metal vias run perpendicular to the silicon substrate and metal lines run parallel to the silicon substrate. Presently, interconnect structures formed on an integrated circuit chip include at least about 2 to 10 wiring levels fabricated at a minimum lithographic feature size designated about 1× (referred to as "thin wires") and above these levels are about 2 to 6 wiring levels fabricated at a larger size (referred to as "fat wires"). Further enhancement of the signal speed and reduction of interaction of signals in adjacent metal lines (known as "cross-talk) is achieved in the 90 nm node product IC chips by surrounding the metal lines and vias in a low k dielectric having a dielectric constant (k) of about 3 to about 3.5. Future product nodes will use an ultra low k dielectric that has a dielectric constant between 1.8 and 3.
In various prior art structures, the thin wires (and optionally the fat wires) are formed in a low dielectric constant (k) material having a dielectric constant between about 3 and about 3.5. In other prior art structures, thin wires (and optionally the fat wires) are formed in an ultra low dielectric constant (ULK) material having a dielectric constant less than 3 and potentially as low as 1.8. Typically, the ULK materials have dielectric constants within a range from 1.8 to 3.
However, fabrication and reliability problems are associated with these prior art structures. For example, in order to perform chemical mechanical polish (CMP) planarization of the conductive metal, such as copper and a metal liner, a hard mask (HM) layer is used atop the ULK dielectric. The HM provides a layer with a low CMP rate, and prevents contamination of the ULK dielectric with components of the CMP slurry, including water (which reacts to form Si—OH groups in the ULK dielectric) and chemicals that interact with the ULK dielectric.
Two specific problems with porous ultra low k (ULK) dielectric films and integration using a HM layer are capacitance and HM retention; porous ULK dielectrics may be made using a sacrificial porogen phase in which the as deposited film contains 100% of the sacrificial phase, while the cured ULK has essentially all of this phase removed, and contains only a few percent or less of the sacrificial phase. The effective dielectric constant (keff) of the BEOL structure is higher than desired due to the use of the HM layer in the structure. HM retention means ensuring uniform retention of the HM in all structures, despite CMP rates that depend on metal pattern density and despite center-to-edge variability of the polishing rates across the wafer. This could lead to potential HM erosion and polishing into the ULK dielectric, thus directly exposing the ULK dielectric to the CMP slurry. The aforesaid erosion and polishing could adversely impact the overall chip performance by increasing the interline leakage (conductivity) and the capacitance (due to a higher film dielectric constant). Further, the topography (roughness) generated at a lower level could result in other CMP or lithography issues at the subsequent upper level(s) in an integrated multilevel build.
A third problem using porous ULK dielectrics is CMP damage to the HM layer, which may exist in three different forms. The first is added Si—OH groups which raise the k and increase the conductivity of the ULK dielectric. The second is broken bonds which increase conductivity. The third is contamination of the HM with metal ions or other chemicals that also increase conductivity.
A solution to the HM retention problem has been to integrate without a HM layer, which is common with low k dielectrics. Within this approach, the ULK dielectric is exposed to CMP, which can cause the dielectric to have severe electrical problems such as high conductivity and increased k. FIG. 1 shows J vs. E plots (i.e., current density vs. electric field) measured on a blanket ULK dielectric layer exposed to CMP Process A for 60 seconds. CMP Process A is chemical-mechanical in nature, but uses a very low down force (0.8 psi) suitable for integration with porous ultra low k dielectric films. The blanket ULK films of FIG. 1 were exposed to Process A, the details of which are: H2O2 based commercial liner slurry (Cabot6618), for 60 sec at 0.8 psi down force. Process A causes the dielectric constant to increase from 2.2 to 3.4 (measured at 150° C.). The J vs. E plot shown in FIG. 1 illustrates how Process A increases the conductivity of the porous ULK dielectric films that were deposited by plasma enhanced chemical vapor deposition. In FIG. 1, curves 1A and 1B (same SiCOH dielectric measured at 150° C.) and 2A and 2B (same SiCOH dielectric measured at 23° C.) are measured on a wafer exposed to process A and show high leakage current density (J). Curves 5 (SiCOH dielectric measured at 150° C.) and 6 (SiCOH dielectric measured at 23° C.) also present in FIG. 1 are measured from a control wafer with no CMP exposure and show low J.
As is known in the art, some of this electrical damage may be repaired using a thermal anneal process step. FIG. 2 illustrates a known prior art method to repair the CMP damage using a thermal (e.g., furnace) anneal. While the physisorbed water can be easily removed by low temperature annealing, the chemisorbed water (which forms Si—OH groups) would require extended high temperature annealing.
Specifically, FIG. 2 shows J vs. E plots (current density vs. electric field) measured on the same ULK dielectric (blanket) films used in FIG. 1. The blanket film was exposed to CMP Process B, the details of which are: a commercial liner slurry, with 6 psi down force, and 15 sec contact time. The CMP Process B exposure results in an increased leakage, line 21, and a dielectric constant of 2.6. Pieces of the wafer were annealed at temperatures of 350° C., 375° C. and 400° C. for 6 minutes. The J vs. E plot after CMP Process B is line 21, with highest leakage current. The J vs. E plot after CMP Process B and then annealing at 350° C. is line 22, after annealing at 375° C. is line 23, and after a 400° C. anneal is line 24. The film leakage is reduced in lines 22-24, but never reaches the original value for a control (no CMP exposure) film, which is illustrated by line 25.
A different fabrication and reliability problem associated with these prior art structures occurs during deposition of the copper barrier/etch stop layer deposited on the copper lines (referred herein as 'the Cu cap'). A plasma pre-clean for the Cu cap (PPFCC) step is used in-situ immediately prior to depositing the Cu cap, in order to provide strong adhesion of the Cu cap to the Cu lines and hence to provide resistance to a common failure mode: electromigration. This plasma pre-clean enhances cap adhesion to copper, but induces damage to the HM or the ULK dielectric. This plasma damage may be in at least 3 forms. The first is nitrogen implantation (when NH3 or N2/NH3 plasmas are used) which raises the dielectric constant (capacitance) between the metal lines. The second is broken bonds which increase the conductivity between the metal lines. The third is removal of carbon from the HM or the ULK, which raises k and increases conductivity.
FIG. 3 shows an increase in leakage current for a HM film having a SiCOH composition after the HM film was exposed to the NH3 PPFCC. Specifically, FIG. 3 shows J vs. E plots (current density vs. electric field) measured on the same ULK dielectric (blanket) films used in FIGS. 1 and 2. Line 31 is the J vs. E plot from the control wafer (no plasma exposure) and lines 32 are measured after exposure to the plasma pre-clean (PPFCC).
Use of ultraviolet (UV) light to modify the bulk of a SiCOH dielectric film is well known. As is known in the art, UV radiation may be used to penetrate into a dielectric of the SiCOH composition to strengthen the bulk of the dielectric to raise the elastic modulus. For example, U.S. Pat. No. 6,566,278 to Harvey teaches the use of UV light to make the bulk of a SiCOH film denser. Specifically, the '278 patent teaches the conversion of Si—OH groups in the bulk of the film into Si—O—Si linkages. The resulting film disclosed in the '278 patent has "bonds characteristic of an ordered silicon oxide lattice" after UV irradiation. To accomplish this, the UV radiation breaks Si—O and O—H bonds and causes formation of more Si(O)3 and Si(O)4 structures (with 3 or 4 bonds to Si, respectively) and these render the material stronger and with a higher elastic modulus.
FIG. 4 shows the absorbance vs. wavelength spectrum of two prior art ULK SiCOH dielectrics. Curve 42 is measured from the ULK dielectric film used in FIGS. 1, 2, 3. Curve 41 is measured from a different ULK dielectric film prepared by a similar process. It is seen that absorbance is higher the shorter the wavelength.
In view of the above, there is a need for providing methods that ensure the successful integration of BEOL structures without a HM/CMP stop layer being present in the structure.

Reliable BEOL integration process with direct CMP of porous SiCOH dielectric

International Business Machines Corporation


Between a speed reducing mechanism (15, 17, 19) for speed-reducing drive power of an electric motor and a differential apparatus (7) for distributing speed-reduced drive power to axle ends is disposed a clutch (5) configured for interruptive transmission of drive power.

1. Field of the Invention
The present invention relates to a power transmission system, such as for an electric automobile using an electric motor as a drive power source or an electric automobile using a fuel engine (an ordinary engine making use of an explosion of fuel) and an electric motor both as a drive power source, and to an operation method for the same.
2. Description of the Related Art
There is disclosed in Japanese Patent Application Laid-Open Publication No. 9-226394 a drive system 2001 for electric automobiles shown in FIG. 22.
The drive system 2001 for electric automobiles includes an electric motor 2003, a reduction gear set 2005, and a differential apparatus 2007.
The electric motor 2003 is driven by a vehicle-mounted battery to produce drive power, which is decreased in speed by the reduction gear set 2005 within a range of the number of revolutions of a traveling wheel and increased in torque, and resultant drive power is distributed via the differential apparatus 2007 to wheels.
In the drive system 2001, as shown in FIG. 22, the electric motor 2003 and the reduction gear set 2005 as well as this reduction gear set 2005 and the differential apparatus 2007 are connected directly with no clutch disposed on the way.
On the other hand, FIG. 23 shows an example of a power transmission system for a four-wheel driven vehicle having an ordinary engine as a drive power source.
This power transmission system includes a transversely arranged engine 2101, a transmission 2103, a belt-driving transfer 2105, a front differential 2107 (as a differential apparatus for distributing drive power from the engine 2101 to left and right front wheels), front axles 2109 and 2111, left and right front wheels 2113 and 2115, a rear-wheel end propeller shaft 2117, a coupling 2118, a rear differential 2119, rear axles 2121 and 2123, left and right rear wheels 2125 and 2127.
The drive power from the engine 2101 is transmitted from an output gear 2129 of the transmission 2103 via a ring gear 2131 to a differential case 2133, to be distributed from the front differential 2107 via the front axles 2109 and 2111 to the left and right front wheels 2113 and 2115, or to be transmitted via the differential case 2133, the transfer 2105, and the propeller shaft 2117 to the rear wheel end.
In this arrangement, the coupling 2118 disposed in a power transmission subsystem at the rear wheel end is employed for control of torque transmission to the rear wheels 2125 and 2127.
For example, when the coupling 2118 is connected, drive power from the engine 2101 is distributed from the rear differential 2119 via the rear axles 2121 and 2123 to the left and right rear wheels 2125 and 2127, rendering the vehicle four-wheel driven.
When the coupling 2118 is disconnected, the rear differential 2119 and subsequent elements of the rear wheel end subsystem are cut off, rendering the vehicle two-wheel driven.
In the conventional electric automobiles, an electric motor is connected directly to wheels, and even in a case of interruption of power supply to the electric motor, such as when travelling by inertia, the electric motor is forced to rotate together with wheel rotation, with burdens on the electric motor.
For example, if the electric motor is a brush type like a DC motor, brushes receive a great influence on the durability, resulting in increased maintenance costs, such as by increase in number of services for brush replacement.
Further, when caused to rotate by wheels, the electric motor serves as a generator, producing electromotive forces (emf). As the rotation is increased in speed by the reduction gear set, there is produced a greater emf, resulting in burdens, such as on a battery or alternator (not shown) or on circuit elements such as a regulator constituted as an integrated circuit, causing a reduced durability.

Power transmission system and operation method thereof


The main object of the present invention is to provide a cathode active material capable of reducing the initial interface resistance against a solid electrolyte material. The present invention solves the above-mentioned problems by providing a cathode active material comprising a cathode active substance exhibiting strong basicity and a coat layer formed so as to cover the surface of the above-mentioned cathode active substance and provided with a polyanionic structural part exhibiting acidity.

In accordance with a rapid spread of information relevant apparatuses, communication apparatuses and the like such as a personal computer, a video camera and a portable telephone in recent years, the development of a battery to be utilized as a power source thereof has been emphasized. The development of a high-output and high-capacity battery for an electric automobile or a hybrid automobile has been advanced also in the automobile industry and the like. A lithium battery has been presently noticed from the viewpoint of a high energy density among various kinds of batteries.
Liquid electrolyte having a flammable organic solvent as a solvent is used for a presently commercialized lithium battery, so that the installation of a safety device for inhibiting temperature rise during a short circuit and the improvement in structure and material for preventing the short circuit are necessary therefor. On the contrary, a lithium battery all-solidified by replacing the liquid electrolyte with a solid electrolyte layer is conceived to intend the simplification of the safety device and be excellent in production cost and productivity for the reason that the flammable organic solvent is not used in the battery.
The intention of improving performance of an all solid state battery while noticing an interface between a cathode active substance and a solid electrolyte material has been conventionally attempted in the field of such an all solid state battery. For example, it is known that interface resistance between a cathode active substance and a solid electrolyte material is reduced by covering the surface of a cathode active substance with LiNbO3. However, the covering of the surface of a cathode active substance with LiNbO3 allows the interface resistance between a cathode active substance and a solid electrolyte material to be reduced at the initial stage; yet, the problem is that the interface resistance increases with time. On the contrary, for example, in Patent Literature 1, an all solid state battery, in which a cathode active substance whose surface is covered with a reaction inhibition portion comprising a polyanionic structure—containing compound is used, is disclosed. This intends to achieve higher durability of a battery by covering the surface of the cathode active substance with the compound having a polyanionic structural part high in electrochemical stability to inhibit interface resistance between the cathode active substance and a solid electrolyte material from increasing with time. On the other hand, in Non Patent Literature 1, a polymer battery, in which LiCoO2 (a cathode active substance) whose surface is covered with Li3PO4 is used, is disclosed. This intends to achieve higher output and higher capacity of a battery by covering the surface of LiCoO2 with Li3PO4 to inhibit oxidative destruction of a solid polyelectrolyte caused at an interface between LiCoO2 and a solid polyelectrolyte.

Cathode active material, cathode active material layer, all solid state battery and producing method for cathode active material


A floor lock assembly for a playpen prevents collapse of the apparatus when it is occupied by a child, whereby a potential safety problem is obviated. In a typical playpen collapsible frame, a lower frame assembly is comprised of a pair of parallel connecting rod units pivotally joined to a pair of crossing rod assemblies. The floor lock assembly extends between the pivoting intersections of the crossing rod units, and includes a pair of rigid linking members extending in opposed relationship from a lock bracket, each linking member pivotally joined to one of the pivoting intersections of the crossing rod units. Each linking member is limited in angular range in its pivoting relationship to the lock bracket, whereby the lock bracket may be supported by the linking members (when the lower frame is in a deployed configuration) in a generally horizontal overcenter disposition beneath a medial portion of the floor panel of the playpen. To collapse the frame, the two pivoting intersections of the crossing rod units must move towards each other as the lock bracket moves upwardly past the overcenter position, and thus the floor panel must moved upwardly with the lock bracket. The weight of a child on the floor panel blocks upward movement of the floor panel, thus also blocking collapse of the frame structure. In the absence of the weight of the child, the lock bracket may be urged upwardly with slight pressure, and the frame collapses without hindrance.

This invention generally relates to collapsible play yard or play pen apparatus, and more particularly to an improved frame construction for such apparatus. An exemplary apparatus in the prior art is described in U.S. Pat. No. 5,381,570 to Cheng, which is incorporated herein by reference in its entirety.
Any apparatus intended for use with babies and children must be designed with safety as the utmost consideration. The typical collapsible playpen is generally comprised of a hinged frame structure adapted to support a foldable enclosure, the frame and enclosure undergoing complementary movements to transform from an expanded, erected disposition in which the apparatus supports a baby or toddler, to a knock-down disposition in which the apparatus occupies a minimum volume for optimum storage and transport.
One potential failure mode of such apparatus occurs when the frame folds up accidentally with a baby or toddler supported within the apparatus. This action may entrap and injure the limbs or neck of the occupant. Accordingly, all reasonable measures must be taken to prevent such occurrences. One device known in the prior art that addresses this problem, described in U.S. Pat. No. 5,542,151, protects the folding joints of the upper frame members from accidental release and collapse due to incidental contact or manipulation by the occupant of the playpen.
However, if the improved folding frame structure is compromised in some unforeseen manner, there is no further protection from accidental collapse of the apparatus. Thus it would be desirable for such prior art apparatus to include a failsafe device that prevents accidental collapse of the apparatus when it is occupied by a baby, toddler or child, without regard to the cause of the accident, whether known or unforeseen.

Floor locking linkage for collapsible playpen


A blow molded plastic container includes a main body portion having an upper surface and a finish portion that extends from the upper surface. A reinforcing strut is provided on the upper surface of the main body portion adjacent to the finish portion for providing increased structural rigidity and top load strength to the container. The reinforcing strut may be fabricated in a manner that promotes drainage of fluid from the container, such as by defining a downwardly sloping inner channel that leads to the finish portion when the container is inverted.

1. Field of the Invention
This invention relates to blow molded plastic containers, and in particular to containers that require enhanced top load strength characteristics, especially in the region about the finish portion.
2. Description of the Related Technology
Many products that were previously packaged using glass containers are now being supplied in plastic containers. Polyethylene terephthalate (PET) thermoplastic resins are polyester materials that provide clarity and transparency that are comparable to glass. PET possesses the processing characteristics, chemical and solvent resistance and high strength and impact resistance that are required for packaging products such as juices, soft drinks and water. PET containers are lightweight, inexpensive, and recyclable and can be economically manufactured in large quantities. They will not shatter and create potentially dangerous shards when dropped, as a glass container may.
PET containers have conventionally been manufactured using the stretch blow molding process. This involves the use of a pre-molded PET preform having a threaded portion and a closed distal end. The preform is first heated and then is longitudinally stretched and subsequently inflated within a mold cavity so that it assumes the desired final shape of the container. As the preform is inflated, it elongates and stretches, taking on the shape of the mold cavity. The polymer solidifies upon contacting the cooler surface of the mold, and the finished hollow container is subsequently ejected from the mold.
Another well-known process for fabricating plastic containers is the extrusion blow molding process, in which a continuously extruded hot plastic tube or parison is captured within a mold and inflated against the inner surfaces of the mold to form a container blank. In such systems, the mold is typically designed to travel at the speed at which the extruded parison is moving when it closes on the parison so that the process can operate on a continuous basis. There are several different types of extrusion blow molding machines, including shuttle molds that are designed to travel in a linear motion and extrusion blow molding wheels that travel in a rotary or circular motion.
Extrusion blow molding is typically used to form plastic containers, such as motor oil containers, from nontransparent materials such as polyolefin or polyethylene. In the past, it was not typical to use extrusion blow molding to fabricate PET containers, because no commercially available PET material provided the required melt strength for extrusion blowmolding in addition to being compatible with standard PET recycling processes. More recently, however, extrudable PET (EPET) materials have been made commercially available that can be processed at temperatures and conditions similar to standard PET and that provide the required melt strength for extrusion blow molding. Such materials have higher melt temperatures than the polyethylene or polyolefin materials that are typically used with extrusion blowmolding. A limited number of PET containers that are fabricated using extrusion blow molding have now been commercially introduced.
Despite the advantages of plastic materials such as PET, glass containers are still prevalent for certain products, particularly those that require a substantial amount of column or top load strength so that the structural integrity of the container is not compromised when the containers are stacked in boxes or pallets and subjected to substantial vertical compressive forces. In many plastic container designs, the neck and shoulder portions are the weakest link in terms of the column strength of the container. The column strength of the container may also be reduced in container designs that have a main body portion with a broad upper surface adjacent to the finish portion of the container that does not slope sharply downward. In such container designs, downward force applied to the finish portion may cause the upper surface of the container to deflect downwardly and possibly buckle.
In order to minimize material costs, it is desirable to make the sidewall of these container portions, as with the rest of the container, as thin as possible. However, such lightweighting comes at the expense of container strength, and in particular column strength.
In the packaging of certain types of beverages, a rinsing agent is applied to the inner surfaces of the container, which must be drained from the container prior to filling the container with product. Any structural reinforcement that is provided to the upper portions of the container ideally should not interfere with efficient drainage of the rinsing agent from the container.
A need exists for a PET container that can be manufactured using an extrusion blow molding process that exhibits superior column strength, particularly in the upper regions of the container that are adjacent to the finish portion, and that does not adversely impact drainage from the container.

Blow molded plastic container having improved top load strength


A centrifugal blower assembly including a ring-shaped planar portion and a sloped guide surface. The ring-shaped planar portion defines a central aperture at which a centrifugal fan is seated. The ring-shaped planar portion is elevated relative to a lower surface of a scroll casing. The sloped guide surface is between the ring-shaped planar portion and the lower surface of the scroll casing. The sloped guide surface slopes towards the lower surface, and extends in a downstream direction towards a partition of the scroll casing at a scroll starting position of the scroll casing.

This section provides background information related to the present disclosure, which is not necessarily prior art.
With reference to FIGS. 1 and 2, an existing blower assembly, such as a blower assembly for a heating, ventilation, and air conditioning (HVAC) unit for a vehicle, is generally illustrated at reference numeral 10. The blower assembly 10 generally includes a centrifugal fan 12 and a scroll casing 14. The centrifugal fan 12 defines an air inlet 20 at a center thereof for receipt of airflow A. The centrifugal fan 12 defines a plurality of air outlets 22 about an outer periphery thereof. A plurality of blades 24 are provided at the air outlets 22 in order to direct airflow A exiting the air outlets 22. The centrifugal fan 12 rotates about an axis at an axial center of the air inlet 20.
The scroll casing 14 includes a side scroll casing 30, generally extending around a portion of the centrifugal fan 12 from a scroll starting position 32 to a scroll ending position 34. An air outlet 36 of the blower assembly 10 extends from the scroll ending position 34 to an outlet aperture 38 at which airflow A exits the blower assembly 10. The air outlet 36 defines the outlet aperture 38.
A window 40 is defined between the side scroll casing 30 and the centrifugal fan 12 proximate to the scroll starting position 32. At the scroll starting position 32 is a partition 42, which at least partially defines the window 40. The partition 42 generally separates or partitions the side scroll casing 30 from the air outlet 36, and can be any suitable partition, such as a vertical partition or nose. The partition generally extends vertically, such as along line B (FIG. 2) relative to a lower surface 44 of the scroll casing 14.
The lower surface 44 of the scroll casing 14 is generally recessed below a ring-shaped planar face 46. The ring-shaped planar face 46 at least partially defines a central aperture 48 (see FIG. 3, which includes the central aperture 48 and features according to the present teachings as described herein) at which the centrifugal fan 12 is seated. The ring-shaped planar face 46 thus generally surrounds the centrifugal fan 12. The ring-shaped planar face 46 and the lower surface 44 of the scroll casing 14 extend in generally parallel and spaced apart planes, with the ring-shaped planar face 46 extending in a plane above the lower surface 44, as particularly illustrated in the orientation of FIG. 2, for example.
Extending between the ring-shaped planar face 46 and the lower surface 44 is a sloped face 50. The sloped face 50 may extend directly from the ring-shaped planar face 46, or from an intermediate surface (not shown) therebetween, which may be angled or sloped toward the lower surface 44. The sloped face 50 slopes radially outward from the ring-shaped planar face 46 (or the intermediate surface) to the lower surface 44 at generally a constant slope in an area between the scroll starting position 32 and the scroll ending position 34.
The sloped face 50 includes a sloped transition portion 52 extending beyond the scroll ending position 34 in the direction of the outlet aperture 38, which is a downstream direction relative to airflow A flowing through the scroll casing 14 out from within the centrifugal fan 12. The sloped transition portion 52 angles radially inward towards the centrifugal fan 12 as the sloped transition portion 52 extends away from the scroll ending position 34 in the downstream direction. The sloped transition portion 52 extends to vertical sidewall 60, which may begin proximate to the partition 42 (as illustrated in FIG. 1) or downstream of the partition 42 closer to the outlet aperture 38.
A planar guide wall or surface 62 extends from the ring-shaped planar face 46 towards the partition 42. An outer edge of the planar guide surface 62 proximate to the air outlet 36 extends from the ring-shaped planar face 46 in generally a tangential direction to the partition 42. Thus at the partition 42, the planar guide surface 62 extends generally in a plane that is perpendicular to line B extending along a height of the partition 42, as illustrated in FIG. 2 for example.
As airflow A exits the air outlets 22, such as proximate to the partition 42, airflow A may contact the planar guide surface 62 and or the partition 42, thereby causing an airflow disruption D. The disruption D may generate a sound, which is generally undesirable. A blower assembly that eliminates or minimizes airflow disruptions, such as disruption D, and sounds associated therewith, would therefore be desirable.

Quieter centrifugal blower with suppressed BPF tone


A method for etching an insulation film through a patterned mask, includes the steps of etching the insulation film until just before an underlayer is about to be exposed by applying a plasma, and modifying a quality of a remaining film of the insulation film by applying another plasma which is different from the plasma used in the above etching process. The method further includes the process of removing the modified remaining film of the insulation film with a liquid chemical. The process of removing the modified remaining film can be also achieved by a dry etching method not employing a plasma.

In order to form a hole as a contact hole on an insulation film or the like, a plasma processing apparatus performs a dry etching such as a high anisotropic reactive ion etching or the like. FIG. 6 shows a case of etching an object to be processed, e.g., a wafer in which an insulation film 202, a hard mask 203 formed of SiO2 or the like, an anti-reflection coating 204 and a resist film 205 are laminated on an underlayer 201 in order.
First of all, as depicted in FIG. 6A, an opening 205A is formed in the resist film 205 by employing a photolithography process. Next, as illustrated in FIG. 6B, a dry etching is performed on the anti-reflection coating 204, the hard mask 203 and the insulation film 202 by using the resist film 205 as a mask until the underlayer 201 is exposed, thereby forming an opening 206. During the dry etching, the underlayer 201 as well as a sidewall of the opening 206 is irradiated by reactive ions or the like. Accordingly, the underlayer 201 is damaged as depicted in FIG. 6B and, further, the damage inflicted on the underlayer 201 hinders a wiring process or the like to be performed.
As described in FIG. 6C, a defective layer 206A has been removed through a conventional wet etching process. However, in case of the wet etching process, since it is difficult to find out the exact thickness of the defective layer 206A to be removed, it is very difficult to precisely remove only the defective layer 206A and, thus, a surface of the underlayer 201 tends to be overetched, thereby deteriorating a fabrication accuracy. Therefore, there is suggested a technique for removing the defective layer 206A while maintaining the fabrication accuracy for forming the opening 206 to the utmost in Japanese Patent Application Nos. H05-182871, H07-167680 and H08-144008 (hereinafter, referred to as Patent documents 1 to 3).
For example, the Patent document 1 suggests a semiconductor device fabrication method involving forming an insulation film on an underlayer of a wafer, dry etching the insulation film by applying a patterned resist film as a mask, exposing the underlayer through an opening generated by dry etching, forming a selective oxide layer by oxidizing a defective layer formed on a surface of the underlayer during the dry etching process, and removing the selective oxide layer by a wet etching. In this method, while the defective layer formed on the surface of the underlayer is removed, an overetching onto the underlayer is suppressed by converting the defective layer into the selective oxide layer by oxidizing it first before it is removed.
The Patent document 2 suggests a semiconductor device fabrication method involving a first plasma etching process in which a part of an inter-layer insulation film is etched along a thickness direction thereof until a surface of a device area is about to be exposed and a second plasma etching process in which a remaining part of the inter-layer insulation film in the thickness direction thereof is etched by a gas capable of generating halogen-based chemical species other than fluorine-based chemical species. In this method, the etching is performed by using the gas capable of generating halogen-based chemical species other than fluorine-based chemical species, thereby suppressing carbon or fluorine contamination on the device area or a generation of a defective layer thereon.
The Patent document 3 suggests a semiconductor device fabrication method involving dry etching an insulation film formed on an underlayer of a wafer, and removing a defective layer formed on the surface of the underlayer by irradiating accelerated oxygen ions thereon through an opening of the insulation film. In this method, since fluorine is not used for removing the defective layer, the surface of the underlayer is not etched. As a result, irregularities are not generated on the surface of the underlayer.
In the conventional method of the Patent document 1, the insulation film is dry etched until the silicon underlayer is exposed and the defective layer formed on the silicon underlayer is oxidized and converted into a selective oxide layer and, then, the selective oxide layer is wet etched. Accordingly, in case an underlayer or a device area is formed on the surface of the silicon substrate, an etching selectivity of the insulation film against the underlayer or the device region can be low during the dry etching process, and, further, the defective layer formed on the surface of the underlayer or the device area is removed by the wet etching. Therefore, it is possible to precisely and exclusively etch the insulation film only, resulting in the erosion of the underlayer or the device area.
Meanwhile, the underlayer keeps getting thinner along with a trend for high integration and high density of a semiconductor device. For example, a film thickness currently ranging from 50 nm to 100 nm is expected to be reduced to range from 20 nm to 30 nm in a near future. Therefore, with the etching method of the Patent document 1, it is not possible to cope with the trend for the thinner semiconductor underlayer.
Further, in the conventional method of the Patent document 2, the etching is performed by using the gas capable of generating halogen-based chemical species other than fluorine-based chemical species, thereby enabling to suppress carbon or fluorine contamination on the device area or a generation of a defective layer thereon. However, it is not possible to completely prevent the contamination from the halogen-based chemical species (elements such as Cl, Br or the like) and the generation of the defective layer. Consequently, with the etching method of the Patent document 2, it is not possible to cope with the trend for the thinner underlayer.
Furthermore, in the conventional method of the Patent document 3, since the defective layer formed on the surface of the underlayer is removed by irradiating accelerated oxygen ions thereon, energy of the oxygen ions should be precisely controlled such that the surface of the underlayer is not etched by the oxygen ions.


A semiconductor device includes at least one semiconductor structure having a plurality of external connection portions on an upper surface, and an insulating member which is made of a resin containing reinforcing materials and arranged on a side of the semiconductor structure. An insulating film is formed on the upper surface of the semiconductor structure, except the external connection portions, and on an upper surface of the insulating member. A plurality of upper wirings each of which has a connection pad portion are located on an upper side of the insulating film and electrically connected to a corresponding one of the external connection portions of the semiconductor structure. The connection pad portion of at least one of the upper wirings is arranged above an upper surface of the insulating member.

1. Field of the Invention
The present invention relates to a semiconductor device incorporating a chip-size semiconductor element and a method of manufacturing the same.
2. Description of the Related Art
In recent years, semiconductor devices called CSP (chip size package) have been developed as portable electronic devices represented by cellular phones decrease their sizes. In a CSP, a passivation film (intermediate insulating film) is formed on the upper surface of a bare semiconductor device having a plurality of connection pads for external connection. Opening portions are formed in the passivation film in correspondence with the connection pads. Wirings to be connected to the connection pads are formed through the opening portions. Columnar electrodes for external connection are formed on the other-terminal sides of the wirings. The space between the columnar electrodes for external connection is filled with a sealing material. According to this CSP, when solder balls are formed on the columnar electrodes for external connection, the device can be bonded to a circuit board with connection terminals by the face-down method. The mounting area can be almost the same as the size of the bare semiconductor device. The CSP can therefore greatly decrease the sizes of electronic devices as compared to the conventional face-up bonding method using wire bonding. A CSP capable of increasing the productivity is disclosed in, e.g., U.S. Pat. No. 6,467,674. In this prior art, a passivation film, wirings, external connection electrodes, and a sealing material are formed on a semiconductor substrate in a wafer state. After solder balls are formed on the upper surfaces of the external connection electrodes that are exposed without being covered with the sealing material, the wafer is cut along dicing lines.
The conventional semiconductor device raises the following problems when the number of external connection electrodes increases as the degree of integration becomes higher. As described above, a CSP normally has external connection electrodes arranged in a matrix on the upper surface of a bare semiconductor device. In a semiconductor device having many external connection electrodes, the size and pitch of the external connection electrodes become extremely small. Because of this disadvantage, the CSP technology cannot be applied to devices that have a large number of external connection electrodes relative to the size of the bare semiconductor device. If the external connection electrodes have extremely small size and pitch, alignment to the circuit board is difficult. There are also many fatal problems such as a low bonding strength, short circuit between electrodes in bonding, and destruction of external connection electrodes which is caused by stress generated due to the difference in coefficient of linear expansion between the circuit board and the semiconductor substrate normally formed from a silicon substrate.

Semiconductor device and method of manufacturing the same


An immersion exposure apparatus includes a projection optical system, a first supply unit, and a second supply unit. The projection optical system projects exposure light from an original onto a substrate. The first supply unit forms a first liquid film in a space formed between the projection optical system and the substrate by supplying first liquid. The space includes a light path of the exposure light. The second supply unit forms a second liquid film around the first liquid film by supplying second liquid that is different from the first liquid.

1. Field of the Invention
The present invention relates to an immersion exposure apparatus that exposes a substrate to light passing through liquid and a device manufacturing method using the immersion exposure apparatus.
2. Description of the Related Art
To manufacture micro-semiconductor devices, such as semiconductor memories and logic circuits, using a photolithographic technique, reduction projection exposure apparatuses have been used. Reduction projection exposure apparatuses project a circuit pattern formed on an original, such as a reticle, onto a substrate, such as a wafer, using a projection optical system so that the circuit pattern is transferred onto the substrate.
The minimum critical dimension (the resolution) that can be transferred by a reduction projection exposure apparatus is proportional to a wavelength of light used for exposure and is inversely proportional to the numerical aperture (NA) of the projection optical system. Therefore, as the wavelength decreases and as the NA increases, the resolution becomes higher. Accordingly, in recent years, in response to a demand for reduction in the size of a semiconductor device, the wavelength of exposure light has been decreased. Thus, to decrease the wavelength of ultraviolet light used for exposure, rather than using a KrF excimer laser (wavelength=about 248 nm), an ArF excimer laser (wavelength=about 193 nm) is used.
In such a trend, immersion exposure has garnered much attention, since immersion exposure can further increase the resolution when a light source such as an ArF excimer laser is used. The immersion exposure decreases the effective wavelength of the exposure light by filling liquid in a space between the final surface of the projection optical system and a wafer (i.e., liquid is used for a medium disposed between the projection optical system and the wafer). Thus, the NA of the projection optical system can be increased in practice, and the resolution can be increased. The NA of the projection optical system is expressed as: NA=n×sin θ where n is an index of refraction of a medium. By filling a medium having an index of refraction higher than that of air (n>1), the NA can be increased to n.
In addition, liquid having a higher index of refraction provides a higher resolution. Accordingly, in place of immersion exposure apparatuses using pure water (purified water), an immersion exposure apparatus using liquid having a high index of refraction has been developed (refer to, for example, Japanese Patent Laid-Open No. 2006-004964).
In some immersion exposure apparatuses using liquid having a high index of refraction, in order to decrease a variation in transmittance of the liquid having a high index of refraction, a technique for purging an area around a liquid film by inactive gas has been developed (refer to, for example, Japanese Patent Laid-Open No. 2006-173295).
A first problem concerning the immersion exposure apparatuses using liquid having a high index of refraction is that the liquid having a high index of refraction tends to absorb oxygen easily as compared with pure water. Accordingly, when the liquid having a high index of refraction is exposed to air, the transmittance of the liquid for light in an ultraviolet light range is significantly decreased. The decrease in the transmittance of the liquid increases the temperature of the liquid due to absorption of exposure light. Accordingly, the index of refraction of the liquid varies. The variation in the index of refraction deteriorates the exposure performance (the image formation performance). To maintain high exposure performance, the transmittance of the liquid needs to be precisely controlled. In addition, to maintain high exposure performance, it is desirable that the transmittance of the liquid maintains a constant value. When the transmittance of the liquid varies, aberration of the projection optical system needs to be controlled in accordance with the variation.
To prevent oxygen from entering the liquid having a high index of refraction, Japanese Patent Laid-Open No. 2006-173295 describes the technique for purging an area around a liquid film by inactive gas. However, in such a case, the structure of a chamber is complicated.
A second problem concerning the immersion exposure apparatuses using liquid having a high index of refraction is that, since the liquid having a high index of refraction has a surface tension smaller than that of pure water, it is difficult to increase contact angles with respect to the surface of a wafer and the surface of a top plate of a wafer stage. Accordingly, in a local fill method, when exposure is performed while the wafer is moved together with the top plate, part of the liquid easily remains on the wafer or the top plate. If part of the liquid remains on the wafer or the top plate, the liquid may evaporate, and therefore, fluctuations in the conditions of an exposure environment, such as changes in temperature, may occur. In addition, when the liquid returns to a liquid film, air bubbles and turbulence may disadvantageously occur in the liquid film.

Immersion exposure apparatus and device manufacturing method


A catheter assembly (1) comprising a catheter (8) having a proximal end (10) adapted to be inserted into a bodily cavity and a distal end (11) having a drainage outlet (13), a catheter package (2) having a cavity for accommodating the catheter and an opening for withdrawing the catheter from the package, and extracting means (17) that are coupled to the catheter for extracting the distal end of the catheter out of the package.

Catheters or especially intermittent urinary catheters are medical devices that are used to drain urine from the urinary bladder in situations where the users are not capable of voiding their bladders or where users have afflictions that cause problems in emptying their bladders.
Intermittent urinary catheters are often single use catheters that are provided with a lubricant, such as a gel lubricant, or the catheters may be provided with a surface coating that provides a low-friction surface on the catheter, such as a catheter having a hydrophilic coating. A frequent side effect of using catheters, including single use catheters is that users have a higher risk of getting a urinary tract infection, which may often be caused by bacteria that come into contact with the catheter prior to insertion. In an attempt to reduce the risk of contracting a urinary tract infection, single use catheters are often provided in sterile packages that maintain the catheters sterile until the user intends to use the catheter and opens the package.
When a sterile catheter package has been opened, there are a number of different scenarios the user may have to face. If the catheter is a gel lubricated catheter, the user has to withdraw the catheter and apply the gel to the surface of the catheter prior to insertion. In a different situation, where the catheter is a dry hydrophilic catheter, the user has to pour water into the package for activating the coating and then withdraw the catheter from the package. In another situation, where the catheter is a ready to use catheter, the user withdraws the catheter from the package and prepares for insertion.
The conventional catheter packages are usually provided in the form of one or two sheets of film that has to be opened to access the catheter. This means that the user is forced to handle the catheter before use in order to withdraw the catheter from the package.
A large group of users of intermittent catheters are persons that have reduced motor skills, as they may have lost voluntary bladder control due to illnesses, such as spina bifida, or accidents that have caused damage to the spinal cord, resulting in either para- or tetraplegia. This group of users may have a reduced dexterity in their hands or fingers and may often struggle with the preparation and/or withdrawal of catheters from their packages, which may further lead to the contamination of the catheter due to the lack of control of their hand or finger movements.


For a multiprocess application including a plurality of work stations at which the application processes proceed simultaneously, such as a printer including serially aligned laser and inkjet print engines, a method of controlling job throughput includes providing a queue for each work station, providing job data to the queues for a plurality of jobs, and consecutively tracking for the jobs the progress of the process corresponding to the rate-determining step for the application for each of the jobs so that as each job is completed at a particular work station the work station begins the process of the work station for the next job.

In many printing applications it is often necessary to use both laser and inkjet printing technologies to successfully produce a desired print job. For example, a print job comprising a multiple page document might include some pages with text only, some pages with color graphics only, and some pages which include both text and color graphics. To handle such or similar situations, a hybrid printer can be used in which "non-color" pages are printed by a laser print engine, the "color" pages are printed by an inkjet print engine, and the "combination color and non-color" pages are printed first by the laser print engine printing the black plane of a page and then by the inkjet print engine printing or imaging the color portion of the page (the latter which may include, inter alia, printing the color black). In such printer configurations the laser and inkjet print engines typically are aligned serially, although provision may be made for media to bypass the inkjet print engine in totally non-color print jobs.
Laser print engines generally are "non-stop" printing devices capable of very high media throughput. Print time for a laser print engine is for most practical purposes independent of the amount of data coverage on a page. Inkjet print engines, however, are generally "stop and go" printing mechanisms requiring significantly higher mechanical overhead. Print time for an inkjet print engine is a function of the amount and distribution of ink to be placed on a page. Typically, an inkjet print engine is capable of much lower media throughput as compared to a laser print engine.
Accordingly, one problem associated with a hybrid printer combining laser and inkjet printing technologies, particularly in situations in which the hybrid printer serves a plurality of networked computers, is throughput "bottleneck," i.e., an operating condition in which the laser print engine cannot print at up to its maximum capacity because it must wait for pages to clear out of the inkjet print engine. Such an operating condition represents an inefficiency which adversely impacts the overall rate of media throughput in the printer.

Method for controlling the passage of media through mixed speed print processes


A method and apparatus are disclosed for enabling automated printing of through holes extending between top and bottom surfaces of a ceramic substrate or the like. The perimeter of the substrate is placed on a support that locates the bottom surface of the substrate spaced from a member that interacts with the interior portion of the substrate. The interacting member has holes that correspond to the through holes in the substrate, and it is moved generally perpendicular to the substrate to a position where it is in juxtaposition with the bottom surface of the substrate and its holes are in registration with the holes in the substrate. Conductive material is applied to the top surface of the substrate and a vacuum is applied to the holes in the interacting member to pull the conductive material through the through holes in the substrate. The vacuum is then discontinued and the interacting member is moved back to a position where it is spaced from the bottom surface of the substrate.

The application of conductive material to the inner surfaces of the through holes, referred to as through hole printing, is presently performed using manual print systems. An operator hand loads a substrate onto a support referred to in the art as a print nest. The operator locates the substrate on the print nest so that the through holes in the substrate are aligned with corresponding holes in the print nest. The operator then activates a hold down vacuum, which is applied through holes in the nest located adjacent to the perimeter of the substrate, to clamp the substrate to the nest.
The print nest is thereafter pneumatically moved into a printing position under a printing screen. The printing operation is then performed whereby the desired pattern of conductive paths, including the conductive material for the through holes, is printed on the substrate, and the nest is moved back to the load/unload position. The operator then activates a second vacuum that is applied to the corresponding holes in the nest and serves to pull the conductive material through the through holes in the substrate and coat the inner walls of the through holes. U.S. Pat. No. 4,710,395 issued to Young et al. on Dec. 1, 1987 discloses a method and apparatus that can be used to increase the uniformity of this coating operation.
This completes the printing operation, and the operator deactivates both vacuums and removes the substrate from the print nest. Before loading the next substrate, the operator must wipe away excess conductive material that has been pulled through the through holes of the previous substrate onto the surface of the nest. Otherwise, this excess conductive material will smear on the bottom surface of the next substrate and cause electrical shorts between conductive paths on the lower surface.
It is clear that the foregoing process is both labor intensive and time consuming and thus makes the product produced by this process expensive. Furthermore, this process does not lend itself to automation in view of the need to wipe away the excess conductive material from the print nest each time a through hole printing operation is performed.

Method and apparatus for through hole substrate printing


A carrying bag accessory featuring a mat that is externally affixed to a bag or any variant bag designs such as a gym bag, duffle bag, rucksack, backpack, etc., and conveniently stored in a folded configuration when not in use and deployed in an unfolded configuration adjacent to the bag when in use to provide a flat clean surface upon which a user can rest or place items on. The mat is comprised of a multiplicity of rigid or semi-rigid hinged panels carefully configured to fold in such a manner as to preserve the cleanliness of surfaces that come into contact with the user. The mat is retained in a folded configuration by means of magnetic or other types of fasteners allowing the deployment and storage of the mat by the user with minimal contact and effort.

The present invention relates to the filed of portable protective sanitary shields. More particularly, the present invention relates to portable floor mats. Exposure to a variety of viruses and fungi that cause foot infections, such as athlete's foot and plantar warts among other diseases, is common in locker rooms. The principal problem lies with the difficulty of maintaining a dry and disinfected locker room floor surface. Many locker room floor layouts conveniently place the showers and bathroom facilities in close proximity to patron's storage lockers. Consequently, locker room floors are typically wet which subsequently become soiled with foot traffic becoming a vector for the transmission of disease. To protect themselves from disease and soiling their clothes, people have bene observed standing on towels, shoes, soiled clothing, and elevated seating benches to avoid contact with a contaminated and soiled locker room floor while changing clothes. Although perforated drainage floor coverings have been implemented to reduce the possibility of slipping accidents caused by standing water, these coverings still become contaminated with fungi, viruses, and soil that can be spread to others. Therefore, there exists a need for a method by which to provide a user with a reusable, easily deployable, portable, sanitary protective floor mat that prevents exposure of the user to floor contamination while minimizing the possibility of self-contamination of its user-exposed surfaces during use. A common item taken to locker rooms is a carrying bag that is used to carry a variety of items, such as clothes, sporting equipment, etc. Such a bag can be effectively employed as a convenient vehicle upon which to integrate and carry a sanitary floor shield mat. The present invention is an attachment to or a modification of a carrying bag, which provides a protective floor shield mat used to protect users from exposure to contamination from various sources and surfaces. More particularly from contamination found in such places as locker rooms.


A small vehicle-mounted power assisted implement that employs an independent motor associated with or located on the vehicle. The implement features a floatdown system for applying a continuous bi-directional force to the implement and to the vehicle to improve ground surfacing capabilities and efficiency.

1. Field of the Invention
The present invention relates to a vehicle mounted implement, and, more particularly, to an attached or removable floatdown implement capable of being supported by a small vehicle.
2. Background
All terrain vehicles ("ATVs") and other small vehicles are capable of accomplishing otherwise difficult or laborious tasks in a relatively short amount of time. As a result, such vehicles are frequently used in connection with farm work, landscaping, and other such labor-intensive activities.
Accessories capable of being attached to and supported by such vehicles are also known. A removable snow plow, for example, may be mounted to a small vehicle to remove snow and ice from various surfaces, such as driveways, sidewalks, short road segments, parking lots, and other similar relatively limited areas of space that are too small for a full size snow plow to maneuver, yet large enough that shoveling by hand would result in a very labor intensive and time consuming task.
Indeed, the small vehicle-mounted plow has become a popular alternative to shoveling heavy snow and ice by hand for several reasons. First, small vehicles such as ATVs are typically quite maneuverable. Second, the blade on a small vehicle-mounted removable snow plow typically comprises a much larger surface area than hand snow shovels, thus providing greater snow removal capabilities with each pass. Third, the time required to shovel a driveway, sidewalk, parking lot, etc., is significantly reduced, due to the speed, power, and efficiency with which a small vehicle is able to remove snow and ice compared to shoveling by hand. Fourth, there is virtually no physical exertion or energy expended by the operator of a small vehicle, as opposed to a significant amount where shoveling by hand. Fifth, operating a small vehicle is often an enjoyable experience, even if for work related purposes.
Several prior art ATV and other small vehicle-mounted plow designs exist. See, for example, U.S. Pat. No. 5,615,745, U.S. Pat. No. 9,590,336, and U.S. Pat. No. 5,329,708, all incorporated herein by reference. Prior art plow designs are generally mounted to a vehicle using a heavy duty pivotable frame suspended from an underside of the vehicle chassis. The pivotable frame attaches generally below the mid point of the vehicle at a pivot point. This configuration keeps the front end of the vehicle from becoming too heavy for satisfactory operation. A mechanical operating lever is provided to lift the blade off of the ground by rotating the blade about the pivot point. Due in part to the space occupied underneath the vehicle by the plow frame, however, and also due to the cant of the plow blade, the plow blade cannot typically be raised more than 2 or 3 inches off of the ground.
Moreover, many prior art plow designs suffer from the following deficiencies. First, many plow users lack the strength or energy required to manipulate the plow blade in a manually operated system. Second, prior art plow systems are generally difficult to mount and remove from a vehicle. Thus, most users mount the plow to a vehicle at the beginning of the winter plow season and do not remove the plow until the season is over. With the plow installed, the vehicle is virtually useless for any other purpose. Indeed, as discussed above, there is very little clearance under the bottom cutting edge of the plow blade even when the blade is completely lifted. There is also very little clearance under the chassis of the vehicle due to the presence of the mounting frame beneath the chassis. Further, the weight of the plow substantially alters the maneuverability of the vehicle to which it is attached.
Another drawback to prior art systems is that many small vehicles, especially ATVs, are relatively light in weight (e.g., lighter ATVs range from about 450 lbs. to 600 lbs. in total weight not including the weight of the plow). Such vehicles thus tend to be underpowered or lack sufficient traction to move large quantities of snow.
Another problem associated with prior art plow designs is blade floating, which results in irregular and/or uneven ground surfacing. Also, blade floating leaves behind residual snow and ice deposits, which may build up and create slush and other problems once warmer weather arrives. Adding weight to the blade of the plow helps reduce floating, but requires the vehicle to work harder and lose critical traction. When the blade is forced down under added weight, the vehicle has a much more difficult time pushing the blade and gripping the surface, effectively negating any efficiency in blade leveling that may otherwise have been gained. Moreover, many plow designs incorporate a spring loaded blade that, upon contact with an immovable object, pivots or rotates so that the top of the plow moves forward while the bottom of the blade rides up over the object. During the period the blade is pivoted, however, the bottom edge of the plow loses contact with the ground, thus forming a residual ridge of snow and ice. A secondary effect of such a ridge is that as the tires of the vehicle cross the ridge, the vehicle is lifted up over the ridge, often causing the plow to temporarily leave the ground. This may result in the formation of a second, smaller ridge. Once the object is cleared, the spring causes the blade to abruptly snap back into position, thus contributing to further leveling and/or floating problems.
Another disadvantage to traditional plow systems, particularly to V-plow systems where a pair of plow blades is connected along a vertical hinge, is that it is difficult to maintain the bottom cutting edge of the plow blade flush with the ground surface unless the plow is precisely mounted on the vehicle and the plow blades are accurately positioned to align the bottom cutting edge flush with the ground. In addition, it is difficult or even impossible to provide evenly distributed downward pressure to a V-blade plow as the bottom cutting edge of the V-plow does not in general remain flush with the ground surface when rotated downward.
Although an operator-controlled actuator mechanism that provides power to an electric actuator to raise and lower the plow may overcome some of these deficiencies, prior art designs that incorporate such a mechanism nevertheless suffer from certain inherent problems. Namely, electrically powered plow designs in the prior art tend to add a significant amount of weight to the plow as a result of requiring a proprietary motor. Also, the incorporation of such a motor renders the plow much more expensive than a manually operated plow.
Accordingly, what is needed is an implement capable of quick and easy installation and removal from a small vehicle. Also what is needed is a small vehicle-mounted implement that is easily operated, and that optimizes efficiency in implement performance. Further what is needed is a small vehicle-mounted plow that may be electrically powered without incurring substantial additional weight and expense.


A system for addressing bus components comprises a bus controller component that controls access between a CPU and a memory address space. A plurality of bus components connected to said bus controller over a bus are addressable via a memory mapped address within the address space. An address translation table is stored on at least one of the plurality of bus components. The bus translation table stores a translation between a virtual address and a real address.

In a computer architecture, a bus provides an interconnection of the various components and devices coupled to the system (e.g., CPU, memory, peripherals, and other external computing devices) and generally carries some combination of power, data, and commands among the components. There are varieties of bus types and all buses fall into one of two categories: serial or parallel. Some examples of parallel buses include ISA, Microchannel, AGP, and so on. Some examples of serial buses include PCI express, SPI bus, and so on.
In most common personal computers, a core logic chipset routes input and output (I/O) traffic among the various components and devices coupled to the system. The core logic chipset is typically split into two parts: the North Bridge and the South Bridge. The CPU, and the main memory are connected together by the North Bridge and communicate via a front side bus. The North Bridge may also connect to other devices attached to various bus interfaces including, PCI, PCI Express, AGP, and so on. The North Bridge is also connected to the South Bridge, the secondary bridge that routes traffic to and from an assortment of I/O devices on the system, e.g., hard disk drives, Ethernet ports, and so on. The traffic from these devices goes through the South Bridge to the North Bridge and then on to the CPU and/or memory.
Many systems use a PCI bus to connect devices to the system. PCI uses a shared bus topology in which all of the different PCI devices communicate with the CPU over the same bus physical connections. Increasingly, systems are switching to PCI Express which uses point-to-point connections between devices to provide greater bandwidth and device isolation. As with PCI, PCI Express devices are able to initiate memory reads and writes (DMA).
Systems based on x86 processors currently program DMA devices using physical memory addresses. This has limitations in making the system secure. A preferable way to handle this is to have a means of translating addresses from DMA devices so that the DMA device can be constrained to work in a more restricted address space. Intel and others are in the process of adding DMA remapping capability to the "central complex" (e.g. the North Bridge, the CPU and memory). Virtual addresses from DMA devices will be translated by logic in the central complex before being presented to the memory system. So that it is not necessary to do an expensive (in time) table lookup every time a virtual DMA address is presented, it is expected that the central complex will be able to cache some number of the translations so that they can be found quickly without reference to memory tables. The address translation cache is often called a Translation Look-aside Buffer or TLB. The TLB would be included in the chipset along with the engine that performs the translation. The problem with this approach is that it is difficult to design the TLB in the central complex to be the right size for all applications. In some systems, the TLB can be fairly small as the number of DMA devices is small and their rate of DMA is low. In other systems, the number of DMA devices is large and their access rate is very high. Each of these different system types requires a different size of TLB.

Scalable DMA remapping on a computer bus