This invention relates to the use of the IL-2 common gamma chain (cγc) and related molecules for the modulation of signal activities controlled by NIK, and some new such molecules.

Nuclear factor κB (NF-κB) is a family of inducible eukaryotic transcription factor complexes participating in regulation of immune response, cell growth, and survival [Ghosh et al. 1998]. The NF-κB factors are normally sequestered in the cytoplasmic compartment by physical association with a family of cytoplasmic ankyrin rich inhibitors termed IκB, including IκBα and related proteins [Baldwin et al. 1996]. In response to diverse stimuli, including cytokines, mitogens, and certain viral gene products, IκB is rapidly phosphorylated at serines 32 and 36, ubiquitinated and then degraded by the 26S proteasome, which allows the liberated NF-κB to translocate to the nucleus and participate in target gene transactivation [Mercurio et al 1999, Pahl et al 1999]. Recent molecular cloning studies have identified a multi subunit IκB kinase (IKK) that mediates the signal-induced phosphorylation of IκB. The IKK is composed of two catalytic subunits, IKKα and IKKβ, and a regulatory subunit IKKγ. The catalytic activity of both IKKα and IKKβ can be activated by a multitude of different NF-κB inducers, including the inflammatory cytokines, tumor necrosis factor and interleukin-1, the T cell receptor and the T cell costimulatory protein, CD28 [Karin et al 2000].
NF-κB-inducing kinase, NIK, (MAP3K14) is a mitogen activated protein kinase (MAP3K) that was discovered by applicants in 1996 (WO9737016) while screening for proteins that bind to the TNF-receptor associated adaptor protein TRAF2 [Rothe et al. 1994, Takeuchi et al. 1996]. Marked activation of NF-κB upon overexpression of this protein kinase, and effective inhibition of NF-κB activation in response to a variety of inducing agents (LMP1, TNFR1, TNFR2, RANK, hTollR, CD3/CD28, interleukin-1R, human T-cell lymphotropic virus-1 Tax, LPS and others [Mlinin et al. 1997, Sylla et al 1998, Darnay et al. 1999, Lin et al. 1999, Geleziunas et al. 1998] upon expression of catalytically inactive NIK mutants suggested that NIK participates in signaling for NF-κB activation [Mlinin et al. 1997].
Targeted disruption of the NIK gene [Yin et al 2001] and study of a naturally occurring mice strain with a point missense mutation in NIK (glycine to arginine at mNIK codon 855) [Shinkaura et al. 1999] revealed an essential role of NIK in lymphoid organ development, thus the mice mutant strain has been called 'alymphoplasia (aly)' mice. Both the aly/aly and NIK knockout mice manifest systemic absence of lymph nodes and Peyer's patches, disorganized splenic and thymic architectures, and immunodeficiency whose most resilient features are low serum Ig levels and lack of graft rejection [Shinkaura et al. 1999]. These abnormalities apparently reflect aberrant signaling by a variety of receptors. The developmental deficiencies of the NIK mutant mice resemble those found in mice deficient in the LTβ receptor (LTβR) suggesting that NIK participates in signaling by this particular receptor. Impaired B cell proliferative capacity in the aly/aly mice could be shown to correlate to a deficient response of these cells to LPS and CD40L [Garceau et al. 2000], and presence of excessive amounts of B1 cells in the mice peritoneal cavity could be ascribed to defects in homing of peritoneal cells to the gut associated lymphatic tissue system as a consequence of deficient chemokine receptor signaling in the secondary lymphoid tissue [Fagarasan et al. 2000].
Apart from these and probably other contributions to the regulation of the development and function of the immune system, NIK seems also to be involved in the regulation of various non-immune functions. The aly/aly (though not the NIK knockout) mice display deficient mammary gland development [Miyawaki 1994]. Moreover, in vitro studies implicated NIK in signaling that leads to skeletal muscle cell differentiation [Canicio et al. 2001] and in the survival and differentiation of neurons [Foher et al 2000].
Consistent with the suggested role of NIK as mediator of NF-κB activation, fibroblasts derived from aly/aly and NIK−/− mice fail to activate NF-κB in response to LTβR activation. Moreover, LTβR upregulation of VCAM-1, which occurs through NF-κB activation, is abnormal in aly/aly murine embryonic fibroblasts [Matsumoto et al. 1999]. Deficient phosphorylation of IκB has also been noted in the response of aly/aly B-lymphocytes to CD40 ligation. In contrast, in dendritic cells of these mice CD40-induced phosphorylation of IκB appeared normal [Garceau et al 1998]. Aly/aly peritoneal cells are also incapable of responding to the chemokine SLC with increased NF-κB activity [Fagarasan et al. 2000]. However, in none of the cells examined so far was the effect of TNF or IL-1 on NF-κB activation found to be ablated by NIK mutation.
Assessment of the pattern of the NF-κB species in lymphoid organs of aly/aly mice indicated that, apart from its role in the regulation of NF-κB complex(s) comprised of Rel proteins (A+p50) and IκB, NIK also participates in controlling the expression/activation of other NF-κB species. Most notably, the lymphocytes of the aly/aly mice were deficient of p52, an NF-κB species that is specifically formed in mature B-lymphocytes through proteolytic processing of an inactive precursor, p100 (NF-κB2), suggesting a deficiency in p100-p52 conversion [Yamada et al. 2000]. Indeed, NIK has been shown to participate in site specific phosphorylation of p100, both directly and through phosphorylation of IKKα, which in turn phosphorylates p100. This phosphorylation serves as a molecular trigger for ubiquitination and active processing of p100 to form p52. This p100 processing activity was found to be ablated by the aly mutation [Xiao et al. 2001, Senftleben et al. 2001].
In view of the structural homology of NIK to MAP3Ks, some attempts have been made to explore the involvement of NIK in the three other main protein kinase cascades known to involve MAP3Ks (the MAP kinase cascades: the ERK, JNK and p38 cascades)[Akiba et al. 1998]. Though in certain cells NIK seems not to participate in any of these cascades, some others cells (PC12) do appear to involve NIK in the ERK cascade [Fochr et al. 2000]. Evidence has also been presented that in certain cells NIK may participate in signaling to the phosphorylation of Jun, the downstream target of the JNK cascade, in a way that is independent of this particular cascade [Akiba et al. 1998, Natoli et al. 1997]. In all, these findings indicate that NIK indeed serves as a mediator of NF-κB activation, but may also serve other functions, and that it exerts these functions in a cell- and receptor-specific manner.
Like other MAP3Ks, NIK can be activated as a consequence of phosphorylation of the 'activation loop' within the NIK molecule. Indeed, mutation of a phosphorylation-site within this loop (Thr-559) prevents activation of NF-κB upon NIK overexpression [Lin et al. 1999]. In addition, the activity of NIK seems to be regulated through the ability of the regions upstream and downstream of its kinase motif to bind to each other. The C-terminal region of NIK downstream of its kinase moiety has been shown to be capable of binding directly to IKKα [Regnier et al. 1997] as well as to p100 [Xiao et al. 2001] and to TRAF2 [Malinin et al. 1997]. These interactions are apparently required for NIK function in NF-κB signaling. The N-terminal region of NIK contains a negative-regulatory domain (NRD), which is composed of a basic motif (BR) and a praline-rich repeat motif (PRR) [Xiao et al. 2000]. Apparently, the N-terminal NRD interacts with the C-terminal region of NIK in cis, thereby inhibiting the binding of NIK to its substrate (IKKα and p100) . Ectopically expressed NIK seems to spontaneously form oligomers in which these bindings of the N-terminal to the C-terminal regions in each NIK molecule are apparently disrupted, and display a high level of constitutive activity [Lin et al. 1999]. The binding of the NIK C-terminal region to TRAF2 (as well as to other TRAF's) most likely participates in the activation process of NIK. However, its exact mode of participation is unknown.
There is likewise rather limited information yet of the downstream mechanisms in NIK action. Evidence has been presented that NIK, through the binding of its C-terminal region to IKKα can activate the IκB kinase (IKK) complex. It has indeed been shown to be capable of phosphorylating serine-176 in the activation loop of IKKα, thereby activating IKKα [Ling et al. 1998]. Consistent with such mode of action, studies of the mechanisms accounting for the deficient activation of NF-κB by the LTβR in aly/aly mice murine embryonic fibroblasts (MEF's) indicated that NIK mutation ablates activation of the IKK signalosome and the consequent phosphorylation of IκB [Matsushima et al 2001]. These findings were not supported, however, by the analysis of MEF's derived from NIK −/− mice. Although the NIK deficient MEF's are unable to manifest NF-κB activation in response to LTβ, they do seem to respond normally to it in terms of IκB phosphorylation and degradation [Yin et al. 2001]. According to these findings, NIK may not participate at all in the activation of the IKK complex by the LTfβR but is rather involved by an as yet unknown mechanism in controlling the transcriptional action of the NF-κB complex after its translocation to the nucleus. There are also still uncertainties as to the way by which NIK triggers p100 phosphorylation and processing. Its ability to bind p100 directly through its C-terminal region and phosphorylate it suggests that p100 serves as a direct NIK substrate [Xiao et al. 2000]. Nevertheless, a recent study has suggested that NIK mediates p100 phosphorylation in an indirect way, through phosphorylation and thus activation of IKKα that in turn phosphorylates p100 [Senftleben et al.2001].
Yamamoto and Gaynor reviewed the role of NF-κB in pathogenesis of human disease (Yamamoto and Gaynor 2001). Activation of the NF-κB pathway is involved in the pathogenesis of chronic inflammatory disease, such as asthma, rheumatoid arthritis (see Tak and Firestein, this Perspective series, ref. Karin et al. 2000), and inflammatory bowel disease. In addition, altered NF-κB regulation may be involved in other diseases such as atherosclerosis (see Collins and Cybulsky, this series, ref. Leonard et al. 1995) and Alzheimer's disease (see Mattson and Camandola, this series, ref. Lin et al. 1999), in which the inflammatory response is at least partially involved. Finally, abnormalities in the NF-κB pathway are also frequently seen in a variety of human cancers.
Several lines of evidence suggest that NF-κB activation of cytokine genes is an important contributor to the pathogenesis of asthma, which is characterized by the infiltration of inflammatory cells and the deregulation of many cytokines and chemokines in the lung (Ling et al. 1998). Likewise, activation of the NF-κB pathway also likely plays a role in the pathogenesis of rheumatoid arthritis. Cytokines, such as TNF-α, that activate NF-κB are elevated in the synovial fluid of patients with rheumatoid arthritis and contribute to the chronic inflammatory changes and synovial hyperplasia seen in the joints of these patients (Malinin et al. 1997). The administration of antibodies directed against TNF-α or a truncated TNF-α receptor that binds to TNF-α can markedly improve the symptoms of patients with rheumatoid arthritis.
Increases in the production of proinflammatory cytokines by both lymphocytes and macrophages have also been implicated in the pathogenesis of inflammatory bowel diseases, including Crohn's disease and ulcerative colitis (Matsumoto et al. 1999). NF-κB activation is seen in mucosal biopsy specimens from patients with active Crohn's disease and ulcerative colitis. Treatment of patients with inflammatory bowel diseases with steroids decreases NF-κB activity in biopsy specimens and reduces clinical symptoms. These results suggest that stimulation of the NF-κB pathway may be involved in the enhanced inflammatory response associated with these diseases.
Atherosclerosis is triggered by numerous insults to the endothelium and smooth muscle of the damaged vessel wall (Matsushima et al. 2001). A large number of growth factors, cytokines, and chemokines released from endothelial cells, smooth muscle, macrophages, and lymphocytes are involved in this chronic inflammatory and fibroproliferative process (Matsushima et al. 2001). NF-κB regulation of genes involved in the inflammatory response and in the control of cellular proliferation likely plays an important role in the initiation and progression of atherosclerosis.
Finally, abnormalities in the regulation of the NF-κB pathway may be involved in the pathogenesis of Alzheimer's disease. For example, NF-κB immunoreactivity is found predominantly in and around early neuritic plaque types in Alzheimer's disease, whereas mature plaque types show vastly reduced NF-κB activity (Mercurio et al. 1999). Thus, NF-κB activation may be involved in the initiation of neuritic plaques and neuronal apoptosis during the early phases of Alzheimer's disease. These data suggest that activation of the NF-κB pathway may play a role in a number of diseases that have an inflammatory component involved in their pathogenesis.
In addition to a role in the pathogenesis of diseases characterized by increases in the host immune and inflammatory response, constitutive activation of the NF-κB pathway has also been implicated in the pathogenesis of some human cancers. Abnormalities in the regulation of the NF-κB pathway are frequently seen in a variety of human malignancies including leukemias, lymphomas, and solid tumors (Miyawaki et al. 1994). These abnormalities result in constitutively high levels of NF-κB in the nucleus of a variety of tumors including breast, ovarian, prostate, and colon cancers. The majority of these changes are likely due to alterations in regulatory proteins that activate signaling pathways that lead to activation of the NF-κB pathway. However, mutations that inactivate the IκB proteins in addition to amplification and rearrangements of genes encoding NF-κB family members can result in the enhanced nuclear levels of NF-κB seen in some tumors.
IL2 is a protein of 133 amino acids (15.4 kDa) with a slightly basic pI. It does not display sequence homology to any other factors. Murine and human IL2 display a homology of approximately 65 percent. IL2 is synthesized as a precursor protein of 153 amino acids with the first 20 aminoterminal amino acids functioning as a hydrophobic secretory signal sequence. The protein contains a single disulfide bond (positions Cys58/105) essential for biological activity.
Mouse and human IL2 both cause proliferation of T-cells of the homologous species at high efficiency. Human IL2 also stimulates proliferation of mouse T-cells at similar concentrations, whereas mouse IL2 stimulates human T-cells at a lower (sixfold to 170-fold) efficiency. The involvement of IL-2 in autoimmunity is controversial (reviewed by O'Shea et al. 2002) It is recognized that IL-2 administration is associated with a variety of autoimmune disorders such as immune thyroiditis, rheumatoid arthritis and other arthropathies. However IL-2 deficient mice produce multiple autoantibodies, including anti-DNA antibodies. About half die of autoimmune haemolytic anemia and the survivors develop inflammatory bowel disease. Importantly, the pathology is corrected by the addition of exogenous IL-2. This indicates a role of IL-2 in maintaining peripheral tolerance.
IL2 is a growth factor for all subpopulations of T-lymphocytes. The IL2R-alpha receptor subunit is expressed in adult T-cell leukemia (ATL) . Since freshly isolated leukemic cells also secrete IL2 and respond to it, IL2 may function as an autocrine growth modulator for these cells capable of worsening ATL.
IL2 also promotes the proliferation of activated B-cells. Such activity requires the presence of additional factors, for example, IL-4. In vitro IL-2 also stimulates the growth of oligodendroglial cells.
Therefore, due to its effects on T-cells and B-cells IL-2 is a central regulator of immune responses. It also plays a role in anti-inflammatory reactions in hematopoiesis and in tumor surveillance. IL2 stimulates the synthesis of IFN-gamma in peripheral leukocytes and also induces the secretion IL-1 TNF-alpha and TNF-beta.
The biological activities of IL2 are mediated by a membrane receptor. Three different types of IL2 receptors are distinguished that are expressed differentially and independently. The high affinity IL2 receptor constitutes approximately 10 percent of all IL2 receptors expressed by cells. This receptor is a membrane receptor complex consisting of the two subunits IL2R-alpha and IL2R-beta as the ligand binding domains and a gamma chain as a signaling component. IL2R-beta is expressed constitutively on resting T-lymphocytes, NK-cells, and a number of other cell types while the expression of IL-2R-alpha is usually observed only after cell activation. IL-2-alpha is, however, synthesized constitutively by a number of tumor cells and by HTLV-1-infected cells.
IL2 receptor expression of monocytes is induced by IFNγ so that these cells become tumor-cytotoxic.
Murine and human gamma subunits of the receptor have approximately 70 percent sequence identity at the nucleotide and amino acid levels. This subunit is required for the generation of high and intermediate affinity IL2 receptors but does not bind IL2 by itself. These two receptor types consist of an alpha-beta-gamma heterotrimer and a beta-gamma heterodimer, respectively. The gene encoding the gamma subunit of the IL2 receptor maps to human chromosome Xq13, spans approximately 4.2 kb and contains eight exons. Relationships to markers in linkage studies suggest that this gene and SCIDX1, the gene for X-linked severe combined immunodeficiency, have the same location. Moreover, in each of 3 unrelated patients with X-linked SCID, a different mutation in the IL2R-gamma gene has been observed.
X-linked severe combined immunodeficiency (XSCID) is a rare and potentially fatal disease caused by mutations of IL2Rγ chain, the gene encoding the IL-2R γ chain, a component of multiple cytokine receptors that are essential for lymphocyte development and function (Noguchi et al. 1993). To date, over 100 different mutations of IL2RG resulting in XSCID have been published. Recent gene knock out studies indicate a pivotal role of this gene in lymphopoiesis [DiSanto et al 1995].
The IL-2Ry chain is a subunit of the IL-2, IL-4, IL-7, IL-9, IL-13, IL-15 and IL-21 receptor complexes wherefore it now dubbed as the 'common γ chain' (cγc).
EP0578932 relates to the whole common gamma chain and especially to the extracellular N-terminal domain.
Consistent with the involvement of IL-2 in autoimmunity there exists a need for a modulator of IL-2 activity for preventing or alleviating said diseases.

Derivatives of the IL-2 receptor gamma chain, their production and use


A circuit arrangement for producing a control signal (Us) for the purpose of dimming at least one lamp, including a device (10) for modifying the phase gating angle corresponding to a dimming input value (8), it being possible for the device (10) for modifying the phase gating angle to be fed, at its input, an input signal (Ue), whose phase gating angle is to be modified, and for an output signal (U1) having a modified phase gating angle to be provided at its output; and an output at which the control signal (Us) can be provided; it also includes a device (14) for comparing the output signal (U1) with a predeterminable signal (Uc) for the purpose of producing the control signal (Us), the amplitude of the predeterminable signal (Uc) depending on the amplitude of the input signal (Ue).

Such a circuit arrangement and such a method are known from the prior art, cf. in this regard FIGS. 1 to 3b which will be explained in more detail below for the purpose of introducing the problems on which the invention is based and in which:
FIG. 1 shows a circuit arrangement in which a device 10 for modifying the phase gating angle of an input voltage Ue, in particular a sinusoidal AC voltage, for example a system voltage, corresponding to a dimming input value 8 is provided at the input. Said circuit arrangement provides a voltage U1 having a modified phase gating angle at its output. The voltage U1 is fed to a rectifier circuit comprising the four diodes D1 to D4. The voltage Ug can be tapped off at a resistor Rg. The voltage Us, which is derived from the voltage Ug across a voltage divider, which comprises the resistors R1 and R2, and an averaging unit, to which the resistor R2 likewise contributes in addition to a capacitor C1, is made available as the control signal at the output of the circuit arrangement.
This control voltage is now made available to an electronic ballast (not shown) to which the lamp to be dimmed is coupled. The problems associated with this circuit are explained with reference to FIGS. 2 and 3:
FIG. 2a shows the waveform of the voltage Ug for different voltages, in particular system voltages, applied at the input of the device for modifying the phase gating angle given an identical dimming input value 8, i.e. both times for a phase gating angle φ of 20°. In FIG. 2a, the voltage Ugh corresponds to a system voltage of 277 V, and the voltage Ug1 corresponds to a system voltage of 120 V. The control voltages Ush and Us1 which correspond thereto are illustrated in FIG. 2b. It can be seen that, despite an identical dimming input value 8, the present circuit arrangement for producing a control signal for the purpose of dimming at least one lamp provides very different control voltages at the electronic ballast which is coupled to the lamp, depending on the input voltage.
FIG. 3a shows the voltage Ug for different phase angles φ, the system voltage being 120 V. The voltage Ug1 corresponds to a phase angle φ of 20°, while the voltage Ug2 corresponds to a phase angle φ of 120°. FIG. 3b shows the control voltages Us1 and Us2 corresponding thereto.
As a result, such a circuit arrangement as illustrated in FIG. 1 is not suitable for operation using different input voltages, in particular system voltages, to be applied to the device for modifying the phase gating angle since the control signal Us provided at the output of the circuit arrangement depends on the input voltage applied to the device for modifying the phase gating angle. At an input voltage of 277 V, the value range for the control voltage is approximately 1 V to 3 V, while at an input voltage of 230 V, a value range for the control voltage of approximately 0.5 V to 1.7 V results.

Circuit arrangement for producing a control signal for the purpose of dimming at least one lamp

Patent-Treuhand-Gesellschaft Fur Elektrisch Gluhlampen MBH


The invention relates to a method for converting a polycondensed elastomeric thermoplastic polymer, including a step of extruding the polycondensed elastomeric thermoplastic polymer in the presence of water. The polycondensed elastomeric thermoplastic polymer is in particular chosen from copolymer block amides, copolyethers or copolyester block urethanes, copolyether block esters and the mixtures thereof, and is preferably a copolyether block amide.

It is known to use polycondensed elastomeric thermoplastic polymers and in particular copolyether-block-amides in the production of varied shaped articles (soles, belts, and the like), this being achieved by simple extrusion or by injection into a mold.
However, this technique presents problems of decomposition of the polymers during extrusion. This decomposition can be reflected in particular by a discoloration, a fall in the molar mass and an accelerated aging of the products.
There thus exists a real need to develop a process for the conversion of a polycondensed elastomeric thermoplastic polymer in which the decomposition of the polymer during extrusion is reduced.
The document EP 1 037 941 describes the extrusion of a composite preparation comprising polyamide and a solid substance of clay type, in the presence of water, with the aim of avoiding a preliminary stage of exfoliation of the clay. This document does not make it possible to solve the problem posed, if only because the polyamide is not an elastomer.

Method for extruding a polymer in the presence of water

Association Pour La Recherche Et Le Developpement Des Methodes Et Processus Industriels—Armines


A noble metal and solid-phase lubricant composition and an an electrically conductive interconductor including the electrically conductive composition are disclosed. The electrically conductive composition includes a noble metal component and a solid-phase lubricant component. The solid-phase lubricant component is present in an amount sufficient to cause the electrically conductive composition to have a coefficient of friction which is significantly lower than the coefficient of friction of the noble metal component without causing the electrically conductive composition to be significantly less malleable than the noble metal component, nor to be significantly less corrosion resistant than the noble metal component. The electrically conductive composition can form a contact layer of the electrically conductive interconnector. The contact layer is bonded to a diffusion barrier which, in turn, is bonded to a bulk electrical conductor of the electrically conductive interconnector.

Many electrical and electronic devices (such as electronic connectors and switches) must exhibit very high reliability. For example, switches that are used to trigger the release of automobile air bags often are required to remain operational, despite non-use, over extended periods of time. In another example, electronic connectors used in high-speed data transmission at conditions which include relatively low-voltage and low-current generally must operate without failure in order to prevent interruptions in data transmission. However, electrically conductive interconnectors within such devices typically are formed of metals which can corrode after wear at surfaces exposed to the atmosphere. Corrosion at surfaces where contact is made often significantly reduces the lifetime reliability of electronic devices which include such interconnectors.
One attempt to improve the reliability of electronic devices is to bond a relatively non-corrosive electrically conductive contact layer to electrically conductive interconnectors at surfaces where contact, such as during switch closure. Contact layers are typically formed of a noble metal or an alloy thereof. However, noble metals are relatively expensive. As a result, contact layers generally are fabricated to be as thin as possible without causing failure under expected use-conditions. Also, noble metals are relatively soft and, therefore, can wear away during repeated operation of electronic devices. The relatively corrosive metal beneath the contact layers can thereby be exposed to the atmosphere, ultimately causing failure of these electronic devices.
Liquid lubricants have been applied to surfaces of contact layers in an attempt to reduce wear. However, many liquid lubricants are considered hazardous, especially during their application, which often involves use of volatile chlorinated hydrocarbon dispersants. In addition, liquid lubricants can become unevenly distributed on contact layer surfaces and can evaporate or creep away, thereby causing portions of the contact layers to be exposed to conditions which can result in excessive wear and consequent premature failure. Additionally, liquid phase lubricants typically attract dust and abrasive particles from the atmosphere which accelerate wear and corrosion in the contact area, thereby resulting in significantly reduced contact reliability. Also, many liquid lubricants are relatively poor electrical conductors, thereby causing relatively high electrical resistance across closed contact surfaces and possible failure of electronic devices which include such contact surfaces.
Solid-phase lubricants have also been applied to the surfaces of contact layers in an attempt to reduce wear. Commonly used solid-phase lubricants include graphite, molybdenum disulfide and various plastics. Typically, these have been applied by air-spraying, sputtering and ion plating. However, the wear durability of these surface coatings is limited because the motion of sliding contacts tends to plow away the solid-phase lubricant from the wear track, thereby leaving a pile-up of lubricant and wear-debris at the ends of the wear track. Also, solid-phase lubricants typically are poor electrical conductors, thereby causing high electrical resistance across contact surfaces which come to rest upon a particle of the solid-phase lubricant.
Thus, a need exists for an electrically conductive composition and an electrically conductive interconnector which overcome or minimize the above-mentioned problems.

Nobel metal and solid-phase lubricant composition and electrically conductive interconnector

Metallon Engineered Materials Corporation


A method of fabricating a semiconductor-on-insulator semiconductor substrate is disclosed that includes providing first and second semiconductor substrates. Either oxygen or nitrogen is introduced into a region adjacent the surface of the first semiconductor substrate and a rare earth and hydrogen are implanted at different energy levels into the second semiconductor substrate to produce a rare earth rich region adjacent the surface and a hydrogen layer spaced from the surface. The surface of the first semiconductor substrate is bonded to the surface of the second semiconductor substrate in a process that includes annealing to react either the oxygen or the nitrogen with the rare earth to form an interfacial insulating layer of either rare earth oxide or rare earth nitride. During the anneal the hydrogen layer is blistered and a portion of the second semiconductor substrate is removed and the surface polished to form a thin crystalline active layer on the interfacial insulating layer.

In the semiconductor industry it is common to form a layer of crystalline silicon (generally referred to as an active layer) on an insulating layer to reduce any effects or interactions between the substrate (or handle wafer) on one side of the insulating layer and components formed on or in the crystalline layer on the other side of the insulating layer. At the present time the preferred insulating layer is formed of silicon dioxide (SiO2) because of the ease in forming the layer and because bonding between the silicon dioxide and the silicon of the handle wafer is easy to achieve. In this disclosure the term "crystalline silicon" is used to denote a layer of silicon that is substantially single crystal material, i.e. as much of a single crystal as can be formed using present day techniques.
One common method of forming a silicon dioxide insulating layer between a substrate and a crystalline silicon layer is to provide two silicon substrates and form a layer of silicon dioxide on the surface of one of the substrate. At present the film of silicon dioxide is almost always formed by thermal oxidation, i.e. heating the substrate in a high humidity (such as steam). The silicon dioxide surface is then brought into contact with the surface of the second silicon substrate and forms a molecular bond through a well known process, referred to in the industry as Van der Waal bonding. One of the substrates is then partially removed by any of several different methods to leave a thin crystalline layer of silicon on the silicon dioxide layer. This in effect forms a buried oxide (BOX) insulator layer.
One method of removing a substantial portion of the substrate is to implant hydrogen, which is then annealed to form a weakened fracture plane. The substrate is then cleaved at the fracture plane and the surface is polished to a mirror surface using well known chemical mechanical polishing (CMP) techniques. Some methods have been introduced to improve the cleaving and polishing, see for example U.S. Pat. No. 6,372,609, entitled "Method of Fabricating SOI Wafer by Hydrogen ION Delamination Method and Wafer Fabricated by the Method", issued Apr. 16, 2002.
One problem with the crystalline silicon on a silicon dioxide insulating layer is the strain produced by stress introduced at the junction by the lattice mismatch between the silicon and the thermally formed silicon dioxide. The lattice mismatch results in a relatively high compressive stress at the junction between the two materials. In many instances this high stress can result in dislocations, crystalline defects, and even fractures in the active layer. Some components can be formed in the crystalline layer that use this compressive stress to an advantage, however, since the compressive stress will be across the entire wafer it will affect all components formed in/on the crystalline layer, many to a highly undesirable degree. To provide an unstressed or unstrained active layer, the thickness of the silicon dioxide layer must be severely limited to a thickness at which the stress substantially disappears. That is, in each atomic layer of the silicon dioxide a small amount of the stress can be removed by lattice matching until, ultimately, all stress is removed (stress distribution). An improved method of removing or engineering the stress is disclosed in a copending application, entitled "Silicon-on-Insulator Semiconductor Wafer", filed of even date herewith, and incorporated herein by reference.
When the active layer is stressed by forming it only on a silicon dioxide insulating layer it can not be treated as bulk silicon because it will be elastically deformed (i.e. strained) by the stress when the layer is too thin. If the stress is not removed or otherwise compensated, the crystalline silicon layer on the insulating layer must be made relatively thick to prevent elastic deformation. This means that transistors on/in the crystalline silicon layer are formed either partially depleted or substantial cost and effort must be expended to form a fully depleted crystalline silicon layer. Also, because the silicon dioxide layer allows some migration of impurities into the active layer from the substrate (handle wafer) both of the substrates must be high quality wafers, which adds substantial expense. Further, the silicon dioxide may contain impurities (e.g. hydrogen molecules introduced during the oxidation process) that can migrate into the active layer. Additionally, the silicon dioxide is a relatively poor insulator and allows leakage current to flow when used in transistors, CMOS circuits, and the like.
It would be highly advantageous, therefore, to remedy the foregoing and other deficiencies inherent in the prior art.
Accordingly, it is an object of the present invention to provide new and improved silicon-on-insulator semiconductor wafers or substrates.
Another object of the invention is to provide a new and improved silicon-on-insulator semiconductor wafer or substrate with an insulating layer that can be formed in an integral step with the formation of an active crystalline layer.
Another object of the invention is to provide new and improved silicon-on-insulator semiconductor wafers or substrates that can be formed thin enough to provide a fully depleted crystalline silicon layer above an insulating layer.
And another object of the invention is to provide new and improved silicon-on-insulator semiconductor wafers or substrates with an insulating layer that prevents impurities from migrating into the active layer and reduces leakage current in semiconductor devices.
Still another object of the present invention is to provide new and improved silicon-on-insulator semiconductor wafers or substrates that require fewer manufacturing steps and are less expensive.


In a lock-out prevention control, in which when a portable device is locked out in a trunk room, an alarm is conducted and a latch of a trunk latch mechanism is controlled to its unlatch state without ID verification with a portable device, in the case where an operation of door lock is conducted by the portable device after a start of the alarm (step SB8), the alarm is stopped (step SB12) and the lock-out prevention control is prohibited. The lock-out prevention control is also prohibited when a switch located in a vehicle cabin is operated (step SB9) regardless of the door lock operation by the portable device. Thereby, the vehicle security and the utility or facility can be improved.

The present invention relates to a smart entry system for a vehicle that enables an operation, such as a door unlock, that is conducted by a passenger carrying a portable device when ID verification is confirmed with the portable device.
A smart entry system, in which an onboard device receives ID (identification) signal that is transmitted by a portable device and when verification of ID (identification) code contained in the ID (identification) signal is confirmed, a vehicle door unlock, an engine start or the like are granted, is known.
Specifically, for example, Japanese Patent Laid-Open Publication No. 2003-269019 discloses the smart entry system, in which at the door unlock operation or the engine start, when the onboard transmitter transmits the request signal and in response to this the portable device transmits the ID signal containing the ID code, the onboard smart key control unit conducts the ID verification based on the ID signal from the portable device. Herein, when this ID verification is confirmed, namely when the ID code contained in the ID signal matches ID code that is stored at the smart keyless control unit, the smart keyless control unit outputs a signal to grant the door unlock or the engine start, and thereby a passenger can execute the door unlock or the engine start with necessary operations.
Further, another type of smart entry system, in which the above-described ID verification with the potable device is conducted additionally at operation of a trunk handle and locking of a trunk lid is cancelled with confirmation of the ID verification, may be considered. Herein, a lock mechanism of the trunk lid is configured such that the trunk lid is mechanically locked when it is closed and it is unlocked by a motor that is operated in response to an unlock signal. Thus, the trunk lid cannot be unlocked by operation of the trunk handle unless the motor is operated. Herein, the unlock signal to operate the motor is transmitted, for example, when the ID verification with the portable device is confirmed with the portable device or when the passenger operates a trunk lever located in a vehicle cabin.
In the above-described smart entry system, in a case where the trunk lid is closed with the portable device located therein, the trunk lid is mechanically locked and thereby the portable device is locked out so that it could not be taken out. In order to avoid this situation, some countermeasure is considered, in which an alarm is conducted to notify the situation and the motor is configured so as to be operated by the operation of the trunk handle without confirmation of ID verification with another portable device. Thereby, the trunk lid is forced to be unlocked by the trunk handle, so it can be opened despite the portable device being locked out. This is a so-called lock-out prevention control.
However, the smart entry system equipped with the above-described lock-out prevention control would have the following problems.
Namely, since the trunk lid is allowed to be unlocked and opened by the operation of the trunk handle without the confirmation of ID verification with another portable device, any unauthorized person who does not carry any portable device to conduct the ID verification could open the trunk lid while the passenger is away form the vehicle, so the vehicle security would deteriorate.
Further, there is a case where the passenger intentionally puts the above-described portable device in the trunk. For example, the passenger puts a spare portable device in a bag or something and then the bag or the like is carried in the trunk. In this case, however, the same situation described above would be established with the spare portable device being located in the trunk, and thus the same problem of the deterioration of the vehicle security described above would occur. Accordingly, the passenger could not put the spare portable device in the trunk in a carefree manner, so utility or facility of the portable device would be deteriorated either.
Also, in a case where the passenger drives a so-called open car type of vehicle, since the car has generally a relatively small baggage space in the vehicle cabin, the passenger tends to put the portable device in the bag and put them in the trunk together in order to prevent the portable device from being lost. In this case, the similar situation to the above would take place as well.


The present invention discloses a switching regulator eliminating beat oscillation, comprising: a first transistor, a second transistor, and an inductor connected to a common node, wherein the first and second transistors operate to convert an input voltage to an output voltage; a comparator comparing a voltage signal with a saw tooth wave to generate a control signal controlling at least one of the first and second transistors; a feedback loop obtaining a feedback signal from the output voltage and generating the voltage signal according to the feedback signal; and an inductorless filter circuit located in the feedback loop for filtering a predetermined frequency band.

1. Field of Invention
The present invention relates to a switching regulator eliminating beat oscillation and a method for eliminating beat oscillation; particularly, it relates to a switching regulator eliminating beat oscillation and a method for eliminating beat oscillation by means of an inductorless filter.
2. Description of Related Art
There are many types of switching regulators, including buck converter, boost converter, inverter converter, and mixing types such as buck-boost converter and inverter-boost converter. By way of example, FIG. 1 shows a conventional buck switching regulator 1 which comprises two transistors Q1 and Q2; the gates of the transistors Q1 and Q2 are controlled by up-gate and low-gate signals UG and LG, respectively. The switching of the transistors Q1 and Q2 controls the current amount and direction on the inductor L, so that power is transmitted to the output OUT. The signals UG and LG are generated according to a feedback signal FB obtained from the output OUT, for example by a PWM (Pulse Width Modulation) controller 10 or a PFM (Pulse Frequency Modulation, not shown), etc. The feedback control mechanism is well known to those skilled in this art and therefore is not redundantly explained here. FIG. 2 and FIG. 3 show boost switching regulator 2 and inverter switching regulator 3, respectively.
Referring to FIG. 4, in a switching regulator (buck converter as an example), a PWM comparator (PWM) compares a voltage signal Vc with a saw tooth wave to generate the signals for controlling the transistorsQ1 and Q2 (for simplicity in explaining the theory, only one PWM comparator is shown in the circuit in FIG. 4; in an actual circuit, the two transistors may not be controlled by the same PWM comparator). The saw tooth wave has a frequency fs, while the voltage signal Vc has a frequency fp. Referring to FIG. 5A-5C, when the voltage signal Vc carries a frequency fp, in the voltage Vd at the common node between the transistors Q1, Q2 and the inductor L, side bands (or called beat oscillation) will be generated at the frequencies −2fs+fp, −fp, −fs+fp, fs−fp, . . . , that is, at the frequency mfs±fp (wherein m is an integer). Because the inductor L and the output capacitor provide low-pass filtering effect, most of the side bands in the output voltage Vo will be filtered out. However when the frequency fp is close to the frequency fs, the frequencies −fs+fp and fs−fp are low frequencies, which can not be filtered out. Instead, the beat oscillation still exists in the output voltage Vo, as shown in FIG. 5C.
The problem mentioned above will become more serious in multiphase switching regulators. Referring to FIG. 6, the first-phase buck switching regulator circuit generates current io1, and the second-phase buck switching regulator circuit generates current io2, constituting the total output current io. The beat oscillation results in a serious imbalance between the output currents io1 and io2 of the two phases as shown in FIG. 5D, and impacts the stability of the circuit.
In view of the foregoing, this invention proposes a switching regulator eliminating beat oscillation, and a method for controlling a switching regulator, to remedy the defects in the conventional technology.

Switching regulator and method for eliminating beat oscillation


A floating strapping head is for use in a strapping machine of the type for positioning, tensioning and sealing a strapping material to itself around a load. The strapping machine has a frame and a strap chute. The floating strapping head includes a tensioning module, a separate sealing module and a drive assembly operably connected to the tensioning module and the sealing module. The head includes a guide along which the tensioning and sealing modules move laterally, together and toward and away from one another. When tension is drawn in the strapping material with an end of the strapping material gripped by the sealing head and an opposite portion of the strapping material gripped by the tensioning module, the drive is actuated to move the tensioning and sealing modules away from one another. The tensioning and sealing modules float, moving along the guide, as one, to equalize the tension in the strapping material on either side of the strapping head.

This invention pertains to a strapping machine. More particularly, this invention pertains to an improved tension, seal and feed arrangement for a strapping machine for plastic strapping material.
Strapping machines are well-known in the art. There are two principle types of strapping machines, manual and automatic, table-top or free-standing machines. Strapping machines are typically designed for use with either plastic or metal (steel) strapping. These machines position, tension and seal strap around a load to bundle or secure the load.
A typical automatic strapping machine includes a frame-like support for the overall machine, a working area to, for example, support a load, a feed head to feed strap around the load and to retract strap prior to tensioning, a chute through which the strap is fed around the load, a strapping head to secure the strap to itself and one or more dispensers for dispensing the strap material to the strapping head.
In a plastic strapping machine, the strapping head serves a number of functions. First, it clamps or grips a free end of the strap as it returns to the strapping head, it clamps or grips a trailing end of the strap following retraction and during tensioning of the strap and it grips the strap again on the opposite or inside of the strap loop, as it severs the sealed strap from the feed or dispenser side and seals the overlapping courses of strapping together.
The feed head typically includes one or more pairs of rotating wheels to feed strap into the strapping head, around the strap chute and back to the strapping head. The feed head also includes a retraction arrangement to retract the slack strap and to "pull" the strap from the strap chute onto the load or package to be strapped. The feed head also includes a tension arrangement to pull tension in the strap to secure the load prior to forming a seal in the strap loop. Known strapping machine feed heads include two pairs of rotating wheels to carry out the feed, retraction and tension functions. Others include a single pair of wheels to carryout these functions. In each, typically, one of the wheels of each pair is a driven wheel and the other wheel is an idler wheel (to provide a surface against which the driven wheel rotates). Still other arrangements use a windlass or winder around which the strap is wound to pull tension in the strap. The winder can be located in the strapping head, in the feed head, or between the heads.
While these arrangements function well to tension the strap, they do so by pulling the strap from one end in an effort to tension the strap along the entire length of the strap as it is wrapped around the load. This typically results in an unequal tension being drawn in the strap. The tension is greatest in the (straight) section of strap from the tensioning device to the first corner of the load. The tension is next highest in the straight section of strap from the first corner to the next corner. In turn, the tension is reduced in each section of strap around the load until the leading end of the strap is reached.
To accommodate the unequal tensioning in the strap, one arrangement uses a strapping head (with tensioning device) that is allowed to "float" in the direction of strap feed (with a spring return) or is pushed mechanically (such as by a cylinder) in the float direction to try to equalize the tension in the strap all around the load.
Neither of these equalizing arrangements have been found to be fully effective because the external force is applied to the strap in only one direction. Moreover, both of these arrangements require additional parts and/or assemblies to float and return the sealing head from the float position.
Accordingly, there is a need for a strap tension equalizing assembly that equalizes the tension in the strap on both sides of and in both directions from the strapping head. Desirably, such a device applies an approximately equal force in both directions on the strap. More desirably, such a device applies a force in both directions without the need for cylinders or springs to balance the device.

Strapping machine with improved tension, seal and feed arrangement


A digitally tunable low voltage CMOS current reference is disclosed. A tunable current reference circuit is provided that includes a current source circuit that is coupled to a power supply voltage. The current source circuit provides a stable current reference output regardless of fluctuations in the power supply voltage. Multiple digitally selectable inputs are included in the current reference circuit and are coupled to the current source circuit. These inputs are used to adjust a value of the current reference output.

1. Technical Field
The present invention is directed to a current reference. Still more specifically, the present invention is directed to a low voltage CMOS current reference that is digitally tunable and that provides a high power supply rejection ratio (PSRR).
2. Description of Related Art
Technology improvements in semiconductor processing have led to a substantial increase in the number of transistors fabricated on a single integrated circuit. Along with an increase in the number of transistors also comes an increase in the amount of power dissipated by the integrated circuit. In an effort to reduce power dissipation (or power consumption), designers have reduced the voltage level of the power supplies in such integrated circuits. Currently for 65 nm and beyond the CMOS Vdd rail is reaching an asymptote of 1.2-0.8V.
Some circuit applications require a current reference that has a good power supply rejection ratio (PSRR), that is small in area, and capable of supplying large currents. Many of the current implementations use diodes, which in typical digital CMOS processes can only operate on the order of 20 microamps. These diodes have a large voltage drop on the order of 0.7 to 0.8V. This limits the voltage scaling and a special higher voltage rail would be required on an ASIC or processor.
Therefore, a need exists for a digitally tunable, high current, CMOS current reference with reduced sensitivity to power supply voltage fluctuations that can operate at current generation CMOS power supply levels.

Digitally tunable high-current current reference with high PSRR

International Business Machines Corporation


A public telephone device includes a high speed data connection controller for communicating with an attached peripheral such as a digital camera. The high speed data connection controller is electrically connected to the telephone controller. A high speed data connection hub also provides connectivity to the attached peripheral via a high speed data connection, the high speed data connection hub being electrically connected to the high speed data connection controller. The high speed data connection is accessible through an outer housing of the telephone device such that data is capable of being transferred from the attached peripheral via the high speed data connection hub and the high speed data connection controller over the telephone network.

When traveling, many tourists like to take pictures of where they go. In the past, the only means that could be used to take pictures were traditional photographic cameras or video cameras.
Today, many individuals own digital cameras. Generally, digital cameras can either have the pictures stored on a floppy disk or in the memory of the camera, and such cameras generally operate as follows: Once the memory or disk becomes full, no new information or pictures can be stored. In order to be able to store new information, the disk or the memory needs to be replaced or cleared. In order to clear the memory or disk, the pictures stored therein need to be offloaded to a computer. This means that a person who is vacationing and has a digital camera often needs to bring a computer with them so that once the camera's memory or disk is full, he or she will be able to offload the pictures and then be able to take more pictures with the camera. Alternatively, individuals must buy additional disks or memory to replace the full disk or memory. Otherwise, once the camera's memory becomes full, no more pictures can be taken.
Sometimes individuals prefer to back-up data as opposed to erasing it. When using a digital camera, the user may desire to copy, or upload, the pictures but not erase them from the camera's disk or memory. Again, a vacationer would have to bring a computer with him or her to be able to upload the pictures.

Telephone having an integrated high speed connection and data transfer system comprising same


A system for data storage includes a switch node, a meta-data server, a plurality of storage servers having at least one respective data storage device, and a scalable interconnect. The scalable interconnect couples the switch node, the meta-data server, and the storage servers. At least one of the switch node, the meta-data server and the storage servers includes a hierarchical storage manager (HSM). When information is received at the switch node, the HSM presents the information substantially simultaneously to the storage servers for storage at the respective data storage devices.

1. Field of the Invention
The present invention relates to a system and method for direct to archive data storage.
2. Background Art
Conventional data file storage systems use Hierarchical Storage Management/Manager (HSM) to move data from one storage class (i.e., category, type, etc.) to another as the information ages. Data is initially stored in a memory that has a high reliability and access performance rating because the data is only stored at that memory. Predetermined policy decisions dictate the size of memory, the level of memory performance for reliability and for access time, and the length of time that data is stored at a particular level of memory. After the predetermined time has expired, data is transferred from high performance memory to successively lower performance memory. The successively lower performance memories are typically successively larger sized memories.
Referring to FIG. 1, a diagram of a conventional data storage system 10 is shown. The data storage system 10 includes a memory 12 (e.g., MEMa), a memory 14 (e.g., MEMb), a memory 16 (e.g., MEMc), and a memory 18 (e.g., MEMn). The memories 12, 14, 16, and 18 generally have decreasing performance requirements, increasing aging criteria, and increasing capacities. For example, in an example of a typical conventional data storage system, information (e.g., DATA) is stored in the memory 12 (e.g., as DATAa) for five days and when the data has aged five days in the memory 12, the data (e.g., DATAa) is transferred to the memory 14 (e.g., stored as DATAb). When the data has aged 50 days in the memory 14, the data (e.g., DATAb) is transferred to the memory 16 (e.g., stored as DATAc). When the data has aged 500 days in the memory 16, the data (e.g., DATAc) is transferred to the memory 18. Information that is stored in the memory 18 can be held for 5,000 days or longer.
The performance of the memories 12, 14, 16, and 18 may be normalized and rated for performance to last byte on a generally logarithmic scale where increased speed of access and data transfer (e.g., inverse of access and data transfer time) is plotted. For example, the memory 12 may be a memory having an extremely rapid information access and transfer (i.e., extremely short information access and transfer time) and a performance rating of 10-100. The memory 14 may be a memory having a rapid information access and transfer (i.e., short information access and transfer time) and a performance rating of 1-10. The memory 16 may be a memory having a slow information access and transfer (i.e., slow information access and transfer time) and a performance rating of 0.1-1. The memory 18 may be a memory having a very slow information access and transfer (i.e., very slow information access and transfer time) and a performance rating of up to 0.1.
The size (i.e., storage capacity) of the memories 12, 14, 16, and 18 is typically matched to the amount of data that is expected to be stored by a user during the duration of the time interval for the memory. For example, the memory 12 can be a 5 TB memory, the memory 14 can be a 45 TB memory, the memory 16 can be a 450 TB memory, and the memory 18 can be a 5 PB memory.
Data stored at a particular memory for a predetermined duration of time and is transferred to the next successively lower performance memory as the data ages (becomes stale). For example, after the data has aged 5 days the data is transferred from memory 12 to memory 14, after the data has aged 50 days the data is transferred from memory 14 to memory 16, after the data has aged 500 days the data is transferred from memory 16 to memory 18. Each successive transfer of data has a potential for introduction of errors that are not detected by error correction measures. Errors that are introduced can be transferred without detection to successive lower stages of memory.
Thus there exists an opportunity and need for an improved system and method for a data storage systems that addresses the deficiencies in conventional data storage system approaches.

System and method for direct to archive data storage


A method and apparatus for data analysis according to various aspects of the present invention is configured to automatically identify a characteristic of a fabrication process for components based on test data for the components.

Semiconductor companies test components to ensure that the components operate properly. The test data not only determine whether the components function properly, but also may indicate deficiencies in the manufacturing process. Accordingly, many semiconductor companies may analyze the collected data from several different components to identify problems and correct them. For example, the company may gather test data for multiple chips on each wafer among several different lots. Test data may come from a variety of sources, such as parametric electrical testing, optical inspection, scanning electron microscopy, energy dispersive x-ray spectroscopy, and focused ion beam processes for defect analysis and fault isolation. This data may be analyzed to identify common deficiencies or patterns of defects or identify parts that may exhibit quality and performance issues and to identify or classify user-defined "good parts". Steps may then be taken to correct the problems. Testing is typically performed before device packaging (at wafer level) as well as upon completion of assembly (final test).
Gathering and analyzing test data is expensive and time consuming. Automatic testers apply signals to the components and read the corresponding output signals. The output signals may be analyzed to determine whether the component is operating properly. Each tester generates a large volume of data. For example, each tester may perform 200 tests on a single component, and each of those tests may be repeated 10 times. Consequently, a test of a single component may yield 2000 results. Because each tester is testing 100 or more components an hour and several testers may be connected to the same server, an enormous amount of data must be stored. Further, to process the data, the server typically stores the test data in a database to facilitate the manipulation and analysis of the data. Storage in a conventional database, however, requires further storage capacity as well as time to organize and store the data.
Furthermore, acquiring the test data presents a complex and painstaking process. A test engineer prepares a test program to instruct the tester to generate the input signals to the component and receive the output signals. The program tends to be very complex to ensure full and proper operation of the component. Consequently, the test program for a moderately complex integrated circuit involves a large number of tests and results. Preparing the program demands extensive design and modification to arrive at a satisfactory solution, and optimization of the program, for example to remove redundant tests or otherwise minimize test time, requires additional exertion.
The analysis of the gathered data is also difficult. The volume of the data may demand significant processing power and time. As a result, the data is not usually analyzed at product run time, but is instead typically analyzed between test runs or in other batches. To alleviate some of these burdens, some companies only sample the data from the testers and discard the rest. Analyzing less than all of the data, however, ensures that the resulting analysis cannot be fully complete and accurate. As a result, sampling degrades the complete understanding of the test results.
In addition, even when the full set of test data generated by the tester is retained, the sheer volume of the test data presents difficulties in analyzing the data and extracting meaningful results. The data may contain significant information about the devices, the testing process, and the manufacturing process that may be used to improve production, reliability, and testing. In view of the amount of data, however, isolating and presenting the information to the user or another system is challenging.
Furthermore, much of the data interpretation is performed manually by engineers who review the data and make deductions about the test and manufacturing process based on their experience and familiarity with the fabrication and test process. Although manual analysis is often effective, engineers understand the fabrication and test systems differently, and are thus prone to arriving at different subjective conclusions based on the same data. Another problem arises when experienced personnel leave the company or are otherwise unavailable, for their knowledge and understanding of the fabrication and test system and the interpretation of the test data cannot be easily transferred to other personnel.

This patent is subject to a terminal disclaimer.


A constant velocity counter track joint (11) having an outer joint part with first outer ball tracks (18) and second outer ball tracks (20), an inner joint part with first inner ball tracks (19) and second inner ball tracks (21). A ball cage (16) is positioned between the outer joint part and the inner joint part with cage windows which each accommodate at least one of the balls. When the joint is in the aligned condition, the aperture angle (δ1) of the pairs of first tracks opens in the central joint plane (E) from the aperture end to the attaching end of the outer joint part (12), and the aperture angle (δ2) of the pairs of second tracks opens in the opposite direction. The central track lines (L18, L19) of the first pairs of tracks each have a turning point (T1-2), and the center angle (β) from the joint center to the turning point (T1-2), is greater than 4°.

In principle, counter track joints of the above-mentioned type are known from U.S. Pat. No. 6,848,999 showing joints with 6 balls and with 8 balls. The type of ball tracks described here corresponds to the type known in itself from Rzeppa joints (RF joints) and undercut-free joints (UF joints). This means that the center lines of the ball tracks consist of uniform radii (RF joints) and, respectively, are composed of radii and adjoining axis-parallel straight lines (UF joints). In the counter track joints described, the axial opening direction of the pairs of tracks alternates around the circumference, which leads to the type of counter track joint. Counter track joints of this type are disadvantageous in that the angle of articulation is limited to approximately 45 degrees because when this angle of articulation is exceeded, the first ball in the joint articulation plane leaves the first pairs of track.
From DE 103 37 612 A1 there are known counter track joints wherein the track center lines of the first pairs of tracks whose opening angle—when the joint is in the aligned condition—points towards the joint base, are designed in such a way that, when the joint is articulated, the opening angle, from a certain angle of articulation onwards, experiences a reversal of its direction of opening. More particularly, this is achieved in that the center lines of the ball tracks of the first pairs of tracks are S-shaped and thus each comprise a turning point.
U.S. Publication No. 2004/116192, inter alia, describes counter track joints wherein the center lines of the first outer ball tracks comprise a turning point near the joint aperture, so that the center lines of the first outer ball tracks are S-shaped. Because of the requirement of symmetry, the same applies to the center lines of the first inner ball tracks of the inner joint part. The angle of articulation of said counter track joints can be increased in this way.
As far as joints of the two latter types are concerned, the basic principle of counter track joints, i.e. atlernately opposed directions of the track opening angles and thus alternately opposed directions of the axial forces of balls acting on the ball cage only applies until a ball has reached the turning point from the inwardly curved track region to the outwardly curved track region. When the angle of articulation at which the ball occupies said second track region of the respective S-shaped tracks has been reached, the track opening angles are no longer, in their entirety, alternately directed around the circumference and the axial forces applied by the balls to the ball cage are no longer axially balanced. The counter track principle thus no longer applies and the ball cage has to axially support itself at the outer joint part and/or on the ball hub. Because of the increased internal friction between the ball cage and the outer joint part and inner joint part respectively, this can lead to a reduced service life.

Counter track joint with track turning point


A method of obtaining a desired function from a computer system by selecting one or more pictorial symbols displayed on a display screen is disclosed. The method comprises the steps of providing a plurality of attributes to at least part of the plurality of pictorial symbols, inferring by using a predetermined rule in accordance with the attributes when one or more of the plurality of pictorial symbols is selected, and obtaining a function of the computer system in accordance with the inferred result.

1. Field of the Invention
The present invention relates to a method of obtaining functions by using pictorial symbols which symbolize functions and so forth of a computer system and for linking mental images of a user with functions and so forth of the computer system, thereby improving the usability of the system.
2. Description of the Related Art
In conventional computer systems, a user operates particular keys on the keyboard in a particular sequence so as to obtain a particular function therefrom. Thus, to obtain a particular function, the user should carefully and thoroughly read operation manuals with respect to the computer system and memorize the key operations thereof.
To reduce the burden to the user, a method using pictorial symbols for example icons which symbolize functions and so forth of the computer system has been used. In this method, icons which symbolize functions and so forth of the computer system are displayed on a display screen thereof. The user clicks one of the icons in accordance with a desired function by using a mouse or the like. With this method, the user can link mental images associated with icons to functions and so forth of the computer system and thereby he or she can readily operate the system. Thus, it is not necessary for the user to thoroughly read the operation manuals and memorize the key operations.
However, in the conventional method of obtaining functions by using pictorial symbols, the functions obtained with the pictorial symbols have been uniquely determined. Thus, pictorial symbols for all functions that the computer system provides are required. In other words, in a small computer system with a small number of functions, no problem occurs. On the other hand, in a large computer system with a large number of functions, a large number of pictorial symbols are required. In other words, since the user should memorize all the pictorial symbols and the corresponding functions, they burden him or her with the operations of the computer system and thereby disadvantageously affecting the human interface with the computer system.

Computer system for executing application programs by a combination of picture symbols


For use with an asymmetrical half-bridge power converter having a primary switching circuit coupled to a primary winding of a transformer and a rectifier coupled to a secondary winding of the transformer, a reverse recovery circuit a method of operation thereof. In one embodiment, the reverse recovery circuit includes an inductor that reduces current spikes in the primary switching circuit caused by a reverse recovery phenomenon associated with the rectifier. The reverse recovery circuit also includes a diode, coupled to the inductor, that clamps a voltage across the rectifier.

The present invention is directed, in general, to power conversion and, more specifically, to a circuit for reducing losses associated with a power converter, a method of operating the circuit and a power converter employing the circuit or the method.
The development of high-efficiency power supplies in combination with a requirement of higher power density is a continuing goal in the field of power electronics. A switched-mode power converter is a frequently employed component of a power supply that converts an input voltage waveform into a specified output voltage waveform. There are several types of switched-mode power converters including an asymmetrical half-bridge power converter.
A conventional asymmetrical half-bridge power converter includes two power switches coupled to a controller, at least one isolation transformer, a voltage balancing capacitor, a rectifier and a filter. The asymmetrical half-bridge power converter generally operates as follows. The first and second power switches conduct current in a complimentary manner, with generally unequal duty cycles, to convert an input DC voltage into an AC voltage to be applied across the isolation transformer. Any DC component of the voltage applied to a primary winding of the isolation transformer is blocked by the voltage balancing capacitor coupled in series with the primary winding of the isolation transformer. The rectifier then rectifies a secondary voltage from the isolation transformer and the filter smooths and filters the rectified voltage to develop an output voltage for delivery to a load. The controller monitors the output voltage of the asymmetrical half-bridge power converter and adjusts the duty cycle of the power switches to ultimately control the output voltage. The output voltage may be maintained at a relatively constant level despite relative fluctuations in the input voltage and the load.
The asymmetrical half-bridge power converter is a well known power circuit topology that may be capable of zero voltage switching (ZVS) operation. A high magnetizing current, usually exceeding twice the load current, however, may be required to attain ZVS operation. In U.S. Pat. No. 5,402,329, entitled, xe2x80x9cZero Voltage Switching Pulse Width Modulated Power Converters,xe2x80x9d which is incorporated herein by reference, Wittenbreder suggests placing an inductor in series with the primary winding of the isolation transformer. One of the ZVS transitions is driven by a combination of the magnetic energy stored in the transformer and the magnetizing energy stored in the inductor. The other ZVS transition is driven by energy stored in the inductor. While the series inductance may allow for ZVS operation with lower magnetizing currents, the inductor may cause spurious voltage spikes across the rectifier during reverse recovery.
Further, one or more of the power switches may be subject to current spikes induced therein by the reverse recovery of the rectifier. Saturable reactors may be used in the secondary circuit to reduce current spiking. However, saturable reactors tend to be larger in size than desired and contribute an appreciable cost factor to the power converter.
Accordingly, what is needed in the art is a circuit that reduces spurious spikes in a power converter that overcomes the deficiencies in the prior art.
To address the above-discussed deficiencies of the prior art, the present invention provides, for use with an asymmetrical half-bridge power converter having a primary switching circuit coupled to a primary winding of a transformer and a rectifier coupled to a secondary winding of the transformer, a reverse recovery circuit a method of operation thereof. In one embodiment, the reverse recovery circuit includes an inductor that reduces current spikes in the primary switching circuit caused by a reverse recovery phenomenon associated with the rectifier. The reverse recovery circuit also includes a diode, coupled to the inductor, that clamps a voltage across the rectifier.
The present invention introduces, in one aspect, a circuit capable of reducing current spikes in the primary switching circuit of a power converter. Additionally, voltage spiking across the rectifier associated with a reverse recovery phenomenon is positively affected. Advantageously, recovering transient energy associated with the reverse recovery phenomenon enhances an energy transfer to a load of the power converter and therefore improves the overall efficiency of the power converter.
In one embodiment of the present invention, the reverse recovery circuit includes an auxiliary winding, coupled to the inductor, that transfers a portion of energy in the inductor to the secondary winding. In a related embodiment, the inductor and the auxiliary winding are series-coupled to the primary winding. These arrangements allow an effective recovery of a portion of the energy in the power converter. In another related embodiment, the diode of the reverse recovery circuit is coupled to a node between the auxiliary winding and the primary winding. In yet another related embodiment, the reverse recovery circuit further includes a second diode coupled to the node. Of course, other circuit configurations may be possible and are well within the scope of the present invention.
In one embodiment of the present invention, the power converter further includes a controller that controls conduction intervals of a power switch of the power switching circuit. In a related embodiment, the controller monitors an output voltage of the power converter and to operate the power switch in response thereto. The output voltage of the power converter may thus be regulated despite variations in the input voltage or the load. Of course, the controller may monitor other characteristics associated with the power converter as desired and control the power switch as a function thereof.
The foregoing has outlined, rather broadly, preferred and alternative features of the present invention so that those skilled in the art may better understand the detailed description of the invention that follows. Additional features of the invention will be described hereinafter that form the subject of the claims of the invention. Those skilled in the art should appreciate that they can readily use the disclosed conception and specific embodiment as a basis for designing or modifying other structures for carrying out the same purposes of the present invention. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the invention in its broadest form.

Reverse recovery circuit, method of operation thereof and asymmetrical half-bridge power converter


Disclosed is a tunable optical filter which may be used in telecommunications systems. The filter comprises a single mode optical waveguide containing a grating. The resonance wavelength of the filter is changed by changing the boundary condition at the interface between the cladding layer and an additional layer applied to the outer cladding layer surface. This boundary condition is changed by changing the refractive index of the additional layer. Means for changing the refractive index of the additional layer include establishing a structural resonance in the additional layer, or forming the additional layer from electro-optic or piezoelectric materials.

The invention is directed to an optical filter which is tunable, i.e. adjustable, with regard to the center wavelength characterizing the filters spectral response. In particular, the subject filter is preferably tuned by either optical or electrical means.
Optical filters have become essential components in wavelength multiplexed communications systems and in systems which use optical amplifiers. Such filters are used as elements to add or drop a selected wavelength and so may be used to block broadband noise while passing a signal, to flatten optical amplifier gain, or to direct a signal of particular wavelength into pre-selected nodes. Greater system flexibility can be achieved using filters whose wavelength response is tunable over a range of wavelengths.
A number of alternative filtering devices are known including, Fabrey-Perot or Mach-Zehnder interferometers, multiple layer dielectric film filters, and filters based on waveguide Bragg or long period gratings. Tuning of these devices may be accomplished by means that change the device refractive index or dimensions. For example straining a device, by bending or stretching a device or a portion thereof, can serve to alter both dimensions and refractive index. In a similar way, dimensions or index may be altered by altering the temperature of a device or a portion thereof. Thermo-electric cooling and heating is a convenient way to carry out thermal adjustment of a device. In addition, optical or electrical means can be used to alter device dimensions or refractive index and thus the device filtering characteristics. These latter means are usually preferred because they provide a filter having a faster response, and which is more reliable, and afford more reproducible control of the device, as compared to devices tuned by mechanical or thermal means.
There is therefore a need in the art for a tunable filter device having:
rapid response to a tuning means;
a high degree of reliability; and,
a high degree of reproducibility.
An optical fiber grating is a periodically or quasi-periodically perturbed waveguide for electromagnetic radiation, the grating, i.e., the perturbation having a preselected length along which the refractive index or the profile of the waveguide changes periodically.
The period of a grating is the distance between corresponding points in two nearest neighbor high or low refractive index portions of the grating.
A long period grating is one that provides a resonance between cladding modes and a core mode propagating in the same direction.
A structural resonance occurs when electromagnetic waves, such as light, bounce around within a structure because of total or near-total internal reflection from a boundary between a high and a low index region and comes back on itself in phase after a single or multiple reflections. Fabrey-Perot interferometers are the simplest example of one dimensional structural resonance. For structural resonance to occur in a waveguide in the transverse plane, the waveguide must be surrounded by a medium of lower refractive index than that of the waveguide. In a circular waveguide, such as an optical fiber, structural resonance occurs within the cladding region because of the total internal reflection at the clad-air or clad-jacket interface. In the case of optical fiber, light incident substantially normal to the usual direction of propagation gets totally internally reflected by the clad-air or clad-jacket interface and at certain wavelengths after many such reflections comes back on itself in phase to constructively interfere and hence cause a structural resonance. (A good reference for this is: S. C. Hill and R. E. Benner, xe2x80x9cMorphology Dependent Resonancesxe2x80x9d, in P. W. Barber R. K. Chang eds. xe2x80x9cOptical Effects Associated With Small Particlesxe2x80x9d, World Scientific (New Jersey. 1988)). FIG. 5 shows an example of structural resonance that can occur in an additional layer surrounding and in contact with the cladding layer of an optical waveguide. In this example, a laser is used to direct light into the layer in a direction substantially perpendicular to the layer surface, The structural resonance of the incident light which occurs in the layer changes the intensity dependent term of the refractive Index of the layer and so changes the peak wavelength filtered by an associated grating.
A Bragg grating is one which produces a resonance between a core mode and a counter-propagating, reflected core mode.
Throughout this document the term waveguide is taken to mean single mode waveguide unless expressly stated otherwise.
The tunable filtering device of this application meets the need for high performance tunable filters by providing an optically or electrically controlled long period or Bragg grating device.
A first aspect of the invention is a tunable optical filter which includes a single mode optical waveguide having a grating impressed upon at least a portion of the waveguide core. The tunability derives from an additional layer applied to the outer surface of the waveguide clad layer. This additional layer is made of a material whose refractive index may be changed by a control mechanism which acts upon the additional layer. Changing the refractive index of this outermost layer, changes the boundary conditions of the electromagnetic fields propagated in the waveguide. This change in boundary conditions will affect the propagation constant of the cladding modes. Depending upon the distance of the additional layer from the core-clad boundary, the change in refractive index of the additional layer may also affect the propagation constant of the core mode. For a typical single mode waveguide this distance is in the range of about 5 xcexcm to 10 xcexcm. The resonance wavelength of the grating depends directly upon the propagation constants of the resonating modes; Thus, changing the propagation constant effectively changes the resonance wavelength of the grating, effectively tuning the resonant peaks of the grating.
An embodiment of the tunable filter has an additional layer which is electro-optic, for example LiNbO3. The refractive index of the layer can then be changed rapidly and reproducibly by means of a voltage applied across the layer. The applied voltage effectively changes the propagation constant of the cladding mode and thus changes the resonant wavelength peaks of the grating. This is one embodiment of the long period grating.
In a preferred embodiment of this aspect of the invention, a structural resonance is established in the additional layer by directing light from one or more light sources onto the layer, the direction of travel of the incident light being transverse to the long dimension of the layer. At structural resonance, light intensity becomes more concentrated in the layer. The light intensity changes the intensity dependent term of the refractive index of the layer and so changes the propagation constant of a cladding mode. The intensity dependent term is commonly called the non-linear refractive index term. One writes the refractive index as n=n1+n2l, in which n1 is the linear index, l is light intensity and n2 is the nonlinear index coefficient. The grating is effectively tuned from one wavelength peak to another by controlling the incident light intensity. A typical light source is one or more lasers which direct light into the additional layer in a direction transverse to the long dimension of the layer.
As the non-linearity coefficient n2 of the material of the additional layer increases, the structural resonance induced index change in the additional layer is greater, so that the effect of the change in the additional layer on the propagating modes, either cladding or core, becomes greater. A typical non-linearity coefficient of a dispersion shifted waveguide is about 2.3xc3x9710xe2x88x9220 m2/W.
The effectiveness of the additional layer, as measured by the width of the tuning band, is expected to be enhanced in layer materials having a relatively higher nonlinear coefficient. The inventors contemplate coefficients on the order of at least 10-19 at this time. Profiles designed to increase non-linear index coefficient are under study for example in co-pending provisional application No. 60/071732 incorporated herein by reference. A typical tuning band width is in the range of about 70 xcexcm. Thus, a preferred embodiment of an additional layer, in which structural resonance is to be established, is an additional layer comprising a material having a non-linearity coefficient in the range of about 10xe2x88x9220  10xe2x88x9219 m2/W.
In yet another embodiment of the novel tunable filter, the additional layer comprises a dye doped silica glass. The refractive index of such a dye doped glass may be changed by launching light transversely into the glass, thereby tuning the wavelength of the filter.
To avoid interaction of the transversely launched light with the signal light propagating in the waveguide, the wavelength of light, used to change the refractive index of the additional layer by means of structural resonance or interaction with a dye, is preferably outside the range of about 1300 nm to 1700 nm, which is an operating band of optical communication systems.
In yet another embodiment of the tunable filter, the additional layer comprises a piezoelectric material, for example the material may be a soft polymer. The density of the material, and thus the refractive index of the material, can be changed by applying a voltage across the material, thereby tuning the grating to a different resonance wavelength.
In an embodiment of this first aspect of the novel tunable filter, In which the boundary of additional layer is sufficiently close to the mode propagating in the core to change the propagation constant thereof, as is noted above, the grating period may be chosen to be that of a Bragg grating,
In a second aspect of the invention, the waveguide, having a core and a clad and an additional outermost layer, contains a grating of period xcex9g which is chosen such that the difference in the propagation constant of a cladding mode, xcex2cl, and the propagation constant of a core mode, xcex2c, are related by the equation xcex2clxe2x88x92xcex2c=2xcfx80/xcex9g, the condition which defines resonance between the modes. Then the filter may be tuned by changing xcex2cl. The xcex2cl may be changed by changing the refractive index of the additional layer by any of the means noted above.
In a third aspect of the novel tunable filter, the grating constant may be chosen as xcex9b, a constant appropriate for Bragg grating. The resonance which is established is then governed by the equation, xcex2rxe2x88x92xcex2c=2xcfx80/xcex9b, where xcex2r is a reflected mode. In this aspect, the filter is tuned by changing xcex2c. Thus the thickness of the cladding layer much be chosen small enough to allow interaction between the core mode and the additional layer-cladding layer boundary. Then xcex2c may be changed by changing the refractive index of the additional layer by any of the means noted in the first or second aspect of the invention.

Tunable optical fiber bragg and long period grating