A conduit for molten glass, a molten glass degassing method and a sub-atmospheric apparatus are provided, which are able to produce homogenous and good quality glass at low cost. A conduit for molten glass, which is capable of flowing molten glass in a horizontal direction, and to which vertical pipes are connectable, is disposed in a substantially horizontal direction. The conduit for molten glass can increase the area of a free surface of the molten glass by setting a width W at a larger value than a height H in cross-section and having an outline in cross-section comprising a convex curve. When the conduit for molten glass thus configured is used as a sub-atmospheric apparatus, it is possible to degas the molten glass effectively. Additionally, it is possible to have a sufficient strength since the convex curve forming the cross-section is elliptical. Further, it is possible to reduce costs by decreasing the amount of metal required for forming the cross-section.

In general, the process for commercially producing glass is broadly classified into a melting step, a refining step and a forming step, and feeding equipment is disposed between steps as required. The melting of glass is done by supplying various kinds of powder materials in a furnace comprising refractories and by melting the supplied powder materials at a high temperature. In order to improve the quality and the homogeneity of such molten glass, it is inevitable to dispose a refining zone, such a sub-atmospheric apparatus.
As such a sub-atmospheric apparatus, has been disclosed the one as shown in FIG. 10 (see, e.g., JP-A-9-142851).
Specifically, the sub-atmospheric apparatus 10 shown in this figure includes an upstream transferring canal 30A for supplying molten glass 21, an uprising pipe 22U for sending the molten glass 21 vertically and upward at a downstream end of the upstream transferring canal 30A, a sub-atmospheric vessel 20 disposed so as to extend substantially horizontally from an upper end of the uprising pipe 22U, a downfalling pipe 22L for sending the molten glass 21 vertically and downward from a downstream end of the sub-atmospheric vessel 20, and a downstream transferring canal 30B for further directing the molten glass 21 in a downstream direction from the downfalling pipe 22L.
The upstream transferring canal 30A includes a first stirrer 31a, and the downstream transferring canal 30B includes a second stirrer 31b.
The uprising pipe 22U, the sub-atmospheric vessel 20 and the downfalling pipe 22L are covered by casings 23.
The uprising pipe 22U, the sub-atmospheric vessel 20 and the downfalling pipe 22L are formed in an arched shape as a whole and serve to pump the molten glass 21 to the sub-atmospheric vessel 20 on the siphon principle and to utilize a pressure difference to remove bubbles contained in the molten glass 21.
Each of the sub-atmospheric vessel 20, the uprising pipe 22U and the downfalling pipe 22L comprises precious metal or the like in order to avoid reaction with the molten glass 21.
By this arrangement, the molten glass 21, which is being supplied from the upstream transferring canal 30A, is stirred by the first stirrer 31a on the way to the uprising pipe to change a dissolved gas into tiny bubbles and make the molten glass 21 uniform. The molten glass 21 is pumped to the sub-atmospheric vessel 20 through the uprising pipe 22U and is degassed in the sub-atmospheric vessel 20. The degassed molten glass 21 is directed to the downstream transferring canal 30B through the downfalling pipe 22L and is transferred to the forming step.
The most important property for the material of parts in direct contact with the molten glass 21 in the sub-atmospheric vessel 20 stated earlier is to prevent glass from being contaminated.
A similar required characteristic is also required for the material of the equipment for connecting respective melting, refining and forming zones to transfer the molten glass.
From this viewpoint, specific precious metal having a high melting point has been frequently utilized in the equipment, which deals with molten glass. In particular, when producing a glass product required for having functionality, it is more strongly encouraged to decrease the amount of impurities, which are introduced from the material of the parts.
However, it is not acceptable to use such precious metal in a large amount as in usual ferrous or nonferrous metal since such precious metal is extremely expensive. For this reason, the precious metal that is used in glass producing equipment has been formed in a thin plate to be utilized as a refractory structure lining or to be utilized as a thin cylindrical pipe having a complete round cross-section, which is the most difficult to collapse.
The arrangement wherein a refractory structure, such as the sub-atmospheric apparatus 10, is lined with precious metal as stated earlier has a problem of mismatching in thermal expansion between refractory and precious metal. For this reason, a thin cylindrical pipe made of precious metal and having a complete round cross-section is utilized.
However, it is inevitable to increase the diameter of such a cylindrical pipe to enlarge the cross-sectional area of the pipe since the amount of the molten glass 21 to deal with tends to increase recently. Several problems stated below have become evident because of such a demand to increase the diameter.
First, there is a problem that a mere increase in the diameter means a proportional increase in the amount of precious metal to use, which results in an explosive increase in equipment costs.
Next, there is a problem of glass defect, which is caused by the sublimation phenomenon of precious metal. Although this problem is rarely caused when molten glass is filled in a cylindrical pipe without gaps, this problem cannot be ignored since the cylindrical pipe is actually used, having spaces remaining therein, in a few cases.
In other words, a slight amount of oxide is caused to sublimate from a surface of precious metal when the precious metal is exposed to a high temperature of a thousand and several hundreds ° C. or above in the presence of oxygen in a sufficient amount. The oxide thus formed is not stable, and the oxide is reduced. by a subtle environmental change, causing tiny metal particles to be recrystallized. Tiny metal particles thus recrystallized are taken in the molten glass. Since the tiny metal particles in the molten glass are not completely dissolved, some of the particles are solidified and remain in the glass, causing quality defect.
The present invention is proposed in consideration of the problems stated earlier. It is an object of the present invention to provide a conduit for molten glass, a molten glass degassing method and a molten glass degassing apparatus, which are capable of producing homogenous and good quality glass at a low cost.

Conduit for molten glass, molten glass degassing method and molten glass degassing apparatus


The present invention relates to neurogenesis inducing genes. In particular, the present invention provides neurogenesis inducing genes coding for Zic proteins, vectors containing such genes, host cells containing such vectors, proteins produced by such host cells, antibodies raised to such proteins, and therapeutic agents or agents for gene therapy for nervous diseases.

The present invention relates to neurogenesis inducing genes.
The early process of vertebrate neurogenesis is divided into several basic processes, such as differentiation into the neural plate (neural induction) and formation and maturation of the neural network from the ectoderm. This early process includes occurrence of neural precursor cells, pattern formation of the nervous system, and proliferation and differentiation of neural precursor cells.
It is known that the early neurogenesis of Xenopus laevis is induced by blockade of BMP4 (i.e., Bone Morphogenetic Protein 4) signals by noggin, chordin, etc. (Sasai et al., Nature, 376:333 [1995]; and Mizuseki et al., Development 125:579-587 [1998]). BMP4 is a factor which induces the ectoderm into epidermal cells. When BMP4 is activated, cells differentiate into the epidermis. Proneural genes (e.g., Neurogenin, NeuroD, XASH-3, XATH-3) which are involved in the control of neural induction (i.e., Neurogenesis, neural differentiation) and in the coding for basic helix-loop-helix(bHLH) transcription factors are also known. However, the factors involved in the blockade of BMP4 signals to proneural genes are still unknown.
Understanding the molecular basis of higher brain functions is important, not only to elucidate the universal principle of these processes, but also in the development of new therapeutic methods for treatment of diseases involving brain functions (i.e., neurogenesis).
The present invention provides neurogenesis inducing proteins, genes coding for the proteins; recombinant vectors comprising the genes, transformants comprising the vectors, an antibodies against the proteins; and therapeutic agents for nervous diseases.
In one embodiment, the present invention relates to a recombinant protein having a protein comprising at least a portion of the amino acid sequence set forth in SEQ ID NO:2. In some embodiments, the present invention provides a protein which consists of the amino acid sequence shown in SEQ ID NO: 2 having a deletion, substitution, or addition of at least one amino acid and which has neurogenesis inducing activity. In another embodiment, the present invention relates to a neurogenesis inducing gene encoding for a protein comprising at least a portion of the amino acid sequence set forth in SEQ ID NO:2 or a neurogenesis inducing gene encoding for a protein comprising at least a portion of the amino acid sequence set forth in SEQ ID NO:2 having a deletion, substitution, or addition of at least one amino acid and which has neurogenesis inducing activity. The present invention also relates to a gene which hybridizes with the neurogenesis inducing gene encoding for a protein comprising at least a portion of the amino acid sequence set forth in SEQ ID NO:2.
In another embodiment, the present invention relates to a gene comprising a DNA sequence having at least a portion of the nucleotide sequence set forth in SEQ ID NO: 1. The present invention also relates to a DNA which hybridizes with a DNA having at least a portion of the nucleotide sequence set forth in SEQ ID NO:1, and which codes for a protein having neurogenesis inducing activity.
In another embodiment, the present invention relates to an isolated nucleic acid encoding a protein having at least a portion of the amino acid sequence selected from the group consisting of SEQ ID NO: 2, SEQ ID NO: 42 and in SEQ ID NO: 44. In one embodiment, the nucleic acid comprises a nucleotide sequence having at least a portion of the sequence selected from the group consisting of SEQ ID NO: 1, SEQ ID NO: 41, and SEQ ID NO: 43. In preferred embodiments, the present invention provides a nucleic acid encoding a neurogenesis inducing gene (e.g., early neurogenesis inducing gene). In particular, the present invention provides a nucleic acid encoding a gene selected from the group consisting of Zic1, Zic 2, and Zic3 genes. In one embodiment, the gene is a Xenopus gene.
The present invention further relates to a nucleic acid capable of hybridizing to a nucleic acid comprising a nucleotide sequence having at least a portion of the sequence selected from the group consisting of SEQ ID NO:1, SEQ ID NO: 41, and SEQ ID NO: 43. In a preferred embodiment, the nucleic acid capable of hybridizing under stringent conditions.
In yet another embodiment, the present invention also relates to recombinant vectors comprising at least a portion of genes described above. The present invention further relates to transformants (e.g., a host cell) comprising the recombinant vectors of the present invention.
The present invention also relates to compositions comprising a protein having at least a portion of the amino acid sequence selected from the group consisting of SEQ ID NO: 2, SEQ ID NO: 42, and SEQ ID NO: 44. In one embodiment, the protein is selected from the group consisting of Zic1, Zic2, and Zic3 proteins. In another embodiment, the protein is a Xenopus protein. In yet another embodiment, the protein is a recombinant protein.
The present invention also provides antibodies against the above described proteins. In particular, the present invention relates to a purified antibody specific to a protein having at least a portion of the amino acid sequence selected from the group consisting of SEQ ID NO: 2, SEQ ID NO: 42, and SEQ ID NO: 44. The present invention further provides therapeutic agents for nervous diseases associated with the above proteins (e.g., in the presence or absence of the proteins). In preferred embodiments, the present invention relates to therapeutic agents or agents for gene therapy of nervous diseases including, but not limited to Alzheimer""s disease, amyotrophic lateral sclerosis, spinocerebellar degeneration, Parkinson""s disease and cerebral ischemia, although it is not intended that the present invention be limited to therapeutic agents related to these diseases.
Furthermore, the present invention relates to methods for producing a neurogenesis inducing protein, comprising, for example, the steps of culturing a transformant comprising a recombinant vector discussed above and recovering the neurogenesis inducing protein from the resultant culture. In one embodiment, the methods of the present invention comprises the steps of: a) providing a composition comprising a recombinant vector, wherein the recombinant vector comprises a nucleic acid having at least a portion of the sequence selected from the group consisting of SEQ ID NO: 1, SEQ ID NO: 41 and SEQ ID NO: 43, and a host cell; b) transforming the recombinant vector into the host cell to produce a transformant; and c) culturing the transformant to produce a neurogenesis inducing protein. In one embodiment, the methods of the present invention further comprises the step of d) isolating the neurogenesis inducing protein. In preferred embodiments, the neurogenesis inducing protein is an early neurogenesis inducing protein.
Further, the present invention relates to methods for gene therapy, comprising the steps of: a) providing i) a subject, and ii) a composition comprising a nucleic acid having at least a portion of the sequence selected from the group consisting of SEQ ID NO: 1, SEQ ID NO: 41 and SEQ ID NO: 43; and b) delivery the composition to the subject. In preferred embodiments, the subject suffers from a disease selected from the group consisting of Alzheimer""s disease, amyotrophic lateral sclerosis, spinocerebellar degeneration, Parkinson""s disease and cerebral ischemia.

The Institute of Physical and Chemical Research


A method is provided wherein hexagonal boron nitride particulates are converted directly into cubic boron nitride particles or agglomerated masses which can be easily milled to the desired size due to the presence of an inert powder during the conversion to reduce interparticle bonding.

This invention relates to the cubic form of boron nitride and its formation or transformation from the hexagonal form of boron nitride. More particularly, this invention relates to the production of polycrystalline CBN abrasive particles of a controlled particle size from HBN powders.
Three crystalline forms of boron nitride are known: hexagonal boron nitride (HBN), a soft graphitic form similar in structure to graphite carbon; wurtzitic boron nitride (WBN), a hard hexagonal form similar to hexagonal diamond; and cubic boron nitride (CBN), a hard zinc blend form similar to cubic diamond. The three boron nitride crystal structures may be visualized as formed by the stacking of a series of sheets or layers of atoms. FIGS. 1-a through 1-c of U.S. Pat. No. 4,188,494 illustrate these structures in greater detail. In HBN crystals, the boron and nitride atoms bonded together are in the same plane as stacked layers. In the more dense CBN crystal structures, the atoms of the stacked layers are puckered out of plane. In addition, bonding between the atoms within the layers of an HBN crystal is predominantly of the strong covalent type, with only weak van der Waals bonding between layers. In CBN crystals, strong, predominantly covalent tetrahedral bonds are formed between each atom and its four neighbors.
Methods for converting HBN into CBN monocrystalline and polycrystalline particles are well known. U.S. Pat. No. 2,947,617 describes a method for preparing cubic boron nitride by subjecting a hexagonal form of boron nitride, in the presence of specific additive materials or catalysts, to very high pressures and temperatures within the cubic boron nitride stable region defined therein by the phase diagram of boron nitride in FIG. 1. Methods for the conversion of HBN to CBN in the absence of catalyst using higher pressures and temperatures are described in U.S. Pat. No. 3,212,852. See also Wakatsuki et al., "Synthesis of Polycrystalline Cubic Boron Nitride (VI)," and Ichimose et al., "Synthesis of Polycrystalline Cubic Boron Nitride (V) ," both in Proceedings of the Fourth International Conference of High Pressure, Kyoto, Japan, 1974, pp. 436-445; U.S. Pat. No. 4,016,244; JP SHO 49-27518 (Wakatsuki et al.); JP SHO 49-30357 (Wakatsuki et al.); JP SHO 49-22925 (Wakatsuki et al.); U.S. Pat. No. 3,852,078 (Wakatsuki et al.); Wakatsuki et al., "Synthesis of Polycrystalline Cubic Boron Nitride (V)," Mat. Resp. Bul. 7, 999-1004 (1972); and GB 1,317,716 (Serota).
It is the cubic form of boron nitride which finds use as an abrasive material typically in the form of a cluster compact, a composite compact, or as particles agglomerated together to form an abrasive tool such as a grinding wheel. In cluster compacts and composite compacts, the abrasive crystals are chemically bonded together, typically in a self-bonded relationship. In contrast, the particles of an abrasive tool are physically bonded together with the aid of a matrix. U.S. Pat. Nos. 3,136,615 and 3,233,988 provide a detailed description of certain types of cluster compacts and methods for their manufacture. U.S. Pat. Nos. 3,743,489 and 3,767,371 provide a description of composite compacts and their manufacture.
Conventional methods for obtaining CBN particles for abrasive tools involve the conversion of fine-sized HBN powders to a CBN mass using the high pressure, high temperature methods described above. After formation, the large CBN mass is extensively milled to obtain particles which are of varying size. The particles are then sieved to obtain particles of a particular mesh size. Using this procedure results in the generation of a significant amount of particles too small for use, referred to as non-valued fines. Excessive milling of the CBN mass requires significant energy and also tends to round the particle edges, which reduces their performance in grinding applications.
It is desirable to provide a more efficient, cost-effective method for producing CBN particulates with reduced milling. U.S. Pat. No. 5,015,265 (Corrigan and Slutz) describes coating HBN particles with non-sinterable coatings prior to conversion of the HBN particles to CBN. This provides coated CBN particles of a desired size with reduced milling. It is desirable to reduce the milling necessary in providing uncoated CBN particles of a controlled size.

Method for controlling the particle size distribution in the production of multicrystalline cubic boron nitride


A method for adjusting a transmit power of a multi carrier transmitter in a mobile communication system includes providing at least two data streams, each data stream to be transmitted on a separate carrier frequency, and determining a transmit signal adaptation metric separately for each of the at least two data streams. The method further includes calculating a combined transmit signal adaptation metric based on the separate transmit signal adaptation metrics, combining the two data streams carried on the two carrier frequencies to an overall transmit signal, and adjusting the transmit power of the overall transmit signal based on the calculated combined transmit signal adaptation metric.

During a communication between a user equipment of a radio communications system and a base station, transmission conditions of transmit channels may vary. An uplink transmit power may be adapted to the transmit channel conditions taking into account the different signals of the multi carrier transmitter.
User equipment for use in radio communications systems, components included therein and methods performed by such components constantly have to be improved. In particular, it is desirable to improve the power transmit control. For these and further reasons there is a need for the present disclosure.

Method for adjusting a transmit power of a multi carrier transmitter and a multi carrier transmitter


In a microcomputer intended for executing a multiplicity of user programs, a memory management unit ensures that none of the user programs can access other programs. However, in order to be able to use common library programs, and at the same time to prevent unchecked access to them, a vector memory area is provided which contains the start addresses of library programs as jump destinations. A library program is called by specifying the vector number, from which the memory management units determines he corresponding address in the vector memory area.

Field of the Invention
In a microcomputer, the program being executed at any time has control over the computer, and/or the memories and other peripheral devices contained in and connected to it. Among other things, this results in that an address of a memory is always jumped to if it is contained in a program instruction, irrespective of whether the memory area containing the address is supposed to be available to the program or not.
In this way, memory areas could be examined whose memory contents are secret and access should be denied. As this is frequently not the case, security precautions need to be taken.
One possibility for such security precautions is to use a memory management unit, denoted MMU below, as it is provided, for example, in an iAPX286 chip from INTEL corporation. This is principally used when not only (chip) manufacturer programs, but also user programs, are to be executed, which can then be put to improper use. The MMU is disposed between the central processing unit, denoted CPU below, of the computer and the bus connecting this unit to the other units, such as memories.
Each application maintains an entry in the MMU, recording which memory contains the application, the address at which it begins, how long it is and what access rights exist. The user must specify these data when loading his application, or his program, into the memory of the microcomputer. The application program then has access rights only to memory areas lying within the area defined by the start address and length specified previously. Entering information into the MMU therefore describes a characteristic of a program stored in a data memory segment. The area containing this entry in the MMU is therefore termed a segment descriptor.
Every call to an address from the program is checked by the MMU, and the call is allowed only when the address lies in the permitted area, otherwise the program execution is terminated or an error message occurs.
In the case in which different users, programs are in memory, this provides the assurance for the particular users that other users cannot view or even alter their programs, since each user program can operate only within the area specified by the user when loading the program.
U.S. Pat. No. 5,452,431 describes a microcircuit with a CPU, which is connected via an address bus to a program memory which has several areas for user programs. A zonal memory area, in which start and end addresses and a reference code of the user programs are listed in a table, is assigned to the memory area for the user programs. When running a user program, the start and end addresses of the memory area of that user program are compared with actually called addresses, whereby an address which was called and which lies outside the area defined by start and end address, results in a program abort. This protective mechanism, however, does not exceed the possibilities for protection established by a MMU.
Published, Non-Prosecuted German Patent Application DE 37 09 205 A1 in combination with Published, Non-Prosecuted German Patent Application DE 35 33 787 A1 cited therein, describes a protective circuit for the protection of data stored in a memory area. A descriptor in which characteristics of that area are entered, is assigned to the memory area. It furthermore contains a preamble in which it is entered whether the data is protected. Furthermore, the preamble contains a vector that is stored in an intermediate memory every time that memory area is addressed. After a positive check-up of the access authorization to the protected data, the vector is transferred to the computerizing unit which manages the memory and which then calls up a program for processing the protected data, whose memory location is indicated by the vector. It is secured (guaranteed) therewith that the protected data is not processed randomly but by that particular program.
User programs usually contain subroutines. With these, different users frequently need the same subroutines, and hence the security precautions described above results in that these subroutines are repeatedly available. This requires an unnecessarily large amount of memory space. It is therefore desirable and would also make sense to provide subroutine libraries in a memory area of the microcomputer which can be accessed by different user programs, possibly incorporating particular security measures such as checking a personal identification number, for example.
However, this would again lead to the problems outlined above, namely that a user with fraudulent intent could access a library program at will by bypassing the checking routines.
It is accordingly an object of the invention to provide a microcomputer that overcomes the above-mentioned disadvantages of the prior art devices of this general type, which allows user programs to access library programs, but which is at the same time protected against manipulation.
With the foregoing and other objects in view there is provided, in accordance with the invention, a microcomputer, containing: an address bus; a memory management unit connected to the address bus; a central processing unit connected to the address bus and to the memory management unit by the address bus; and at least one program memory having at least one memory area for storing user programs and connected to the address bus and to the memory management unit via the address bus, each of the user programs being assigned in the memory management unit a segment descriptor storing at least a start address, a length and access rights of a respective user program, the at least one program memory further having a library program memory area for storing library programs and a vector memory area, a further segment descriptor having a segment descriptor label is stored in the memory management unit and describes an assignment of the vector memory area and the library program memory area, at least a vector number and a vector assigned to the vector number being stored in the vector memory area, and a call to a library program from the respective user program having to contain at least the segment descriptor label and the vector number to which the memory management unit assigns the vector, a jump to the library program called being effected by the vector.
In the microcomputer according to the invention, it is not possible to access a library program directly. Instead, a vector number is specified in the call instruction in addition to a label for the MMU segment descriptor describing the library program. The label for the MMU segment descriptor may be a number or a name, for example.
The MMU checks whether the vector number specified actually exists and whether it belongs to the library program called. If the test result is positive, access is permitted to a vector memory area whose start address and length are stored in the MMU segment descriptor. Only in this memory vector area is the vector number stored. Also in the memory vector area a jump address or an address of a jump instruction (i.e. a vector) to the library program start address is also stored. This effectively prevents a user from being able to access the library program directly and at the same time from possibly bypassing security routines.
Other features which are considered as characteristic for the invention are set forth in the appended claims.
Although the invention is illustrated and described herein as embodied in a microcomputer, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.


A global dimming control method of a liquid crystal display for controlling a luminance of backlight depending on a displayed image includes calculating an average picture level (APL) of the displayed image, calculating the number of pixels of a chromatic region belonging to the displayed image when the APL is equal to or less than a previously determined first threshold value, comparing the number of pixels of the chromatic region with a previously determined second threshold value, calculating a gain value of the chromatic region when the number of pixels of the chromatic region is greater than the second threshold value, and multiplying the gain value by the APL to calculate an adjustment dimming control signal, and controlling the luminance of the backlight using a dimming value obtained based on the adjustment dimming control signal.

1. Field of the Invention
Embodiments of the disclosure relate to a liquid crystal display and a global dimming control method thereof capable of controlling a luminance of backlight depending on a displayed image.
2. Discussion of the Related Art
A range of application for liquid crystal displays has gradually grown because of their excellent characteristics such as light weight, thin profile, and low power consumption. The liquid crystal displays have been used in personal computers such as notebook PCs, office automation equipments, audio/video equipments, interior/outdoor advertising display devices, and the like. The liquid crystal displays display an image using a thin film transistor (TFT) as a switching element. A backlit liquid crystal display occupying most of the liquid crystal displays controls an electric field applied to a liquid crystal layer and modulates light coming from a backlight unit, thereby displaying an image.
The image quality of the liquid crystal display depends on its contrast characteristic. There is a limit to an improvement of the contrast characteristic using only a method for controlling a data voltage applied to the liquid crystal layer to modulate a light transmittance of the liquid crystal layer. Thus, a global dimming control method for adjusting a luminance of backlight depending on an input image has been proposed, so as to improve the contrast characteristic. The global dimming control method calculates an average picture level (APL) of an input image and varies a turn-on duty ratio of a pulse width modulation (PWM) signal based on the APL, thereby adjusting the luminance of the backlight. For example, as shown in FIG. 1, the global dimming control method controls the turn-on duty ratio of the PWM signal to be about 100% based on the image having the APL of about 60%; controls the turn-on duty ratio of the PWM signal to be about 60% based on the image having the APL of about 5%; and controls the turn-on duty ratio of the PWM signal to be about 50% based on the image having the APL of about 4%. As above, the global dimming control method increases the luminance of the backlight as the APL increases, and vice versa. Hence, the global dimming control method improves dynamic contrast characteristic of the image measured between adjacent frames and at the same time reduces power consumption.
As shown in FIG. 2, the global dimming control method is generally implemented at the low APL, for example, at the APL equal to or less than about 10%. Images of the low APL (for example, equal to or less than about 10%) are generally images having characters on a black background or color images of the low APL. In this instance, if the duty ratio of the PWM signal corresponding to a dimming ratio decreases based on the low APL of the image, visibility of a chromatic region in a color image of the low APL having chromatic colors is greatly reduced as shown in FIG. 3. Hence, the image quality is degraded.

Liquid crystal display and global dimming control method thereof


A method of forming self-aligned silicide devices which includes providing a silicon substrate having shallow trench isolation regions for defining a device area formed therein; then, forming sequentially a gate oxide layer, a polysilicon layer, a first titanium nitride layer, a titanium silicide layer, a second titanium nitride layer and a silicon nitride layer over the substrate. After a gate electrode is etched out from the above layers, a titanium layer is deposited over the device, and then a self-aligned titanium silicide layer is formed using a heating process. The use of a titanium silicide layer having protective top and bottom titanium nitride layers, compared with a single tungsten silicide layer in a conventional method, provides for a self-aligned silicide device having a rather low gate resistance; being free from narrow width effect of a titanium self-aligned silicide layer; is applicable to self-aligned contact window processes, and avoids the cross-diffusion of doped ions in the polysilicon layer of a dual gate electrode having a tungsten polycide layer.

1. Field of Invention
The present invention relates to a method of manufacturing a semiconductor device. More particularly, the present invention relates to a method of forming a self-aligned silicide device.
2. Description of Related Art
As the level of integration for MOS devices is increased, resistance in the source/drain terminals of the MOS device gradually rises to a value comparable to the channel resistance of the MOS device. To ensure integrity at the shallow junction between metallic contacts and the MOS terminals, and for the downward adjustment of sheet resistance in the source/drain terminals, self-aligned silicide processes are now employed in the manufacturing of very large scale integrated (VLSI) circuits, especially for the manufacturing of semiconductor devices having a line width smaller than about 0.5 .mu.m.
When the density of integrated circuits is further increased by shrinking the device dimensions to the deep submicron level, a dual gate electrode such as an N-type/P-type gate electrode is necessary. The dual gate electrode is formed by depositing a layer of tungsten silicide (WSi.sub.X) over an ion doped polysilicon layer, and then etching the tungsten silicide layer and the polysilicon layer to form a tungsten polycide gate. However, the tungsten silicide formed using the conventional method has a high sheet resistance. Therefore, the channel length of the device is incapable of being shrunk very much. Furthermore, the doped ions in the polysilicon layer are able to cross-diffuse when subsequent thermal processes are performed.
FIGS. 1A through 1D are a series of cross-sectional views showing the progression of manufacturing steps in the production of a self-aligned silicide device according to a conventional method. First, as shown in FIG. 1A, a silicon substrate 10 is provided. Then, shallow trench isolation regions 11, a gate oxide layer 12a and a polysilicon layer 13a are sequentially formed above the substrate 10. The shallow trench isolation regions 11 are formed using an anisotropic dry etching method to form shallow trenches in the substrate 10, and then depositing silicon dioxide to fill up the trenches. The shallow trench isolation regions 11 serve to define the device active area 9. The gate oxide layer 12a can be formed, for example, by depositing a silicon dioxide layer. The polysilicon layer 13a has a thickness of about 1000-3500 .ANG., and can be formed, for example, by using a low pressure chemical vapor deposition (LPCVD) method.
Next, as shown in FIG. 1B, a tungsten silicide layer 14a is deposited over the polysilicon layer 13a. For example, tungsten hexafluoride (WF.sub.6) is used as a source gas to react chemically with silane (SiH.sub.4) or dichlo-silane (SiH.sub.2 Cl.sub.2) at a temperature of about 300.degree.-600.degree. C., and then the tungsten silicide layer 14a is deposited using a low pressure chemical vapor deposition process. Subsequently, a silicon nitride layer 15a is deposited over the tungsten silicide layer 14a. The silicon nitride layer 15a can be deposited, for example, using a low pressure chemical vapor deposition method.
Next, as shown in FIG. 1C, using conventional photolithographic and etching techniques, the gate oxide layer 12a, the polysilicon layer 13a, the tungsten silicide layer 14a and the silicon nitride layer 15a are patterned and then etched to form a gate oxide layer 12b, a polysilicon layer 13b, a tungsten silicide layer 14b, a silicon nitride layer 15b, and which exposes the remaining substrate 10 surface. The stacked polysilicon layer 13b, the tungsten silicide layer 14b and the silicon nitride layer 15b together constitute a composite gate electrode.
Finally, as shown in FIG. 1D, spacers 16 are formed around the periphery of the gate electrode, covering portions of the substrate 10. Thereafter, a titanium layer is sputtered over the spacers 16 and the exposed portions of the substrate 10. Then, rapid thermal processing is carried out to form titanium silicide layers 17 above the substrate 10 on each side of the gate electrode.
For the above conventional method, since the tungsten silicide layer 14b of the composite gate electrode layer has a high sheet resistance, the channel length of the device cannot be shrunk very much. In addition, the doped ions in the polysilicon layer of a dual gate electrode may experience heating due to subsequent thermal treatments, which may lead to a cross-diffusion of ions. Therefore, the device performance is greatly lowered.
In light of the foregoing, there is a need in the art for improving the method of forming a self-aligned silicide device.

Method of forming a self-aligned silicide device


Circuit interrupters with opto-electronic and/or acoustic systems that can measure displacement over time, optionally along with interrupt current measurements, during an opening and closing event with signal data collected when triggered by a “breaker open” or “breaker close” event.

Circuit interrupters provide protection for electrical systems from electrical fault conditions such as, for example, current overloads, short circuits and abnormal level voltage conditions. Typically, circuit interrupters include a stored energy type operating mechanism which opens electrical contacts to interrupt the current through the conductors of an electrical system in response to abnormal conditions, although a wide range of driving mechanisms may be employed.
Circuit interrupters can be high voltage or low voltage. Referring to FIG. 2A, circuit interrupters, such as, for example, power circuit breakers for systems operating above about 1,000 volts, typically utilize vacuum interrupters 15 (VIs) as the switching devices but lower rated devices may also use VIs. The circuit interrupters include separable main contacts 16, 17 disposed within an insulating housing 15h. Generally, one of the contacts 16 is fixed relative to both the housing 15h and to an external electrical conductor which is interconnected with the power circuit associated with the circuit interrupter. The other contact 17 is moveable. In the case of a VI, the moveable contact assembly usually comprises a stem 15s of circular cross-section having the contact 17 at one end enclosed within a vacuum chamber 15c and a driving mechanism 18 coupled at the other end which is external to the vacuum chamber 15c. An operating rod assembly comprising a push rod 19, which is fastened to the end of the stem 15s opposite the moveable contact 17, and a driving mechanism 18 provide the motive force to move the moveable contact 17 into or out of engagement with the fixed contact 16. See, e.g., U.S. Pat. No. 8,952,826 to Leccia et al., the contents of which are hereby incorporated by reference as if recited in full herein.
VIs are typically used, for instance, to reliably interrupt medium voltage alternating current (AC) currents and, also, high voltage AC currents of several thousands of amperes or more. Conventionally, one VI is provided for each phase of a multi-phase circuit and the VIs for the several phases are actuated simultaneously by a common operating mechanism, or separately by separate operating mechanisms (and separate auxiliary switches).
Over the life of a VI, the surface of each of the contacts can erode due to the arcing that occurs between the contacts 16, 17 (FIG. 2A) during each interruption. For example, each contact can lose 3-5 mm of material over its life due to erosion. This loss of material is taken up by the contact spring, causing it to lose some of its compression. This loss of compression translates to a loss of compressive force (or contact wipe) on the contacts within the VI. As is well known to those of skill in the art, sufficient contact force is important to the performance of VIs. In particular, insufficient contact force increases the risk of overheating or explosion in the event of a short circuit and failure to interrupt the circuit. Thus, it can be important to monitor the amount of contact erosion over the life of a VI in order to monitor the extent to which contact force is decreasing. Such monitoring, however, is difficult or even impossible in current designs, where visual access to the contacts is limited unless the breaker is removed from a switchgear and operated "off-line" for contact erosion or nonexistent, e.g., designs where the contacts are hidden. See, FIG. 1A (breaker OPEN) and FIG. 1B (breaker closed) which show a visual inspection method of evaluating erosion based on an erosion line EL from a back of a breaker in a power off configuration. The erosion line EL is visually inspected only when the breaker is manually closed (FIG. 1B). If the erosion line EL is visible, then the VI 15 is deemed acceptable. If the erosion line EL is not visible (the line enters the VI chamber 15c along with the stem 15s), the VI contacts 16, 17 (FIG. 2A) are eroded beyond desired limits and the corresponding pole unit assembly should be replaced. This is a "binary" evaluation. The erosion line EL is used to either identify the VI as "good" or "bad".
FIGS. 2A and 2B illustrate another prior art evaluation method using a "WIPE" evaluation method which also requires that the breaker/VI be taken out of the operating system for evaluation. The noted wear discussed above affects the contact wipe. That is, the contact "WIPE" is the force holding the vacuum interrupter contacts 16, 17 closed and the energy available to hammer the contacts 16, 17 open with sufficient speed for reliable interruption. A related measurement is the contact "stroke." Stroke is the gap between the fixed and moving contacts 16, 17 of a circuit breaker, i.e., a VI 15, when the circuit breaker contacts are in the open, first position. The circuit breaker operating mechanism provides a fixed amount of motion to a second contact assembly. The first portion of the motion is used to close the contacts (i.e., stroke) and the remainder is used to further compress a (preloaded) wipe spring 14. This additional compression is called WIPE. WIPE and stroke are thus generally related to each other by relation: total displacement=Stroke+WIPE. Thus, as the stroke increases due to the erosion of contacts, the WIPE decreases.
The height from the top of the conductor (conductor gap when breaker is OPEN) M1 and a second height M2 (conductor gap when breaker is closed) can be measured. M3 is the measured WIPE (usually factory set to 5.0 mm) Erosion=Δ1+Δ2=(M2−M1)+(5.0−M3). Erosion<3.0 mm is indicated as acceptable criteria; Erosion>3.0 mm is indicated as rejection criteria.
There remains a need for systems that can detect and/or monitor the amount of contact erosion over the life of a VI and that can be carried out with the VI in an operable "power on" position without requiring manual inspection and/or operator-visual access to the contacts.

Circuit interrupters with non-contact sensor systems for evaluating erosion of electrical contacts and related methods


A method and system for intraoperative, image-based reduction control for long bone shaft fracture treatment. The method includes preoperative steps of a) implanting markers into the proximal fragment and into the distal fragment of the broken bone, b) creating a 3D reference model of bone by taking a CT scan of the healthy bone, a CT scan of the broken bone and c) defining landmarks in the reference model based on the marker positions. The method further includes intraoperative steps of d) extracting the 3D position of the same landmarks from a series of 2D fluoroscopic images, using a reference object and e) comparing the positions the preoperatively defined landmarks and the positions of the intraoperatively extracted landmarks to calculate the malalignment of the fracture fragments.

Many dislocated fractures of long bones, in particular of the lower extremities, are currently treated surgically (osteosynthesis). Every osteosynthesis typically includes preoperative, intraoperative and postoperative medical imaging. Preoperative and postoperative medical imaging is used for diagnosis and planning, and control, respectively. Intraoperative medical imaging, which is commonly achieved using a mobile fluoroscope, provides an optical feedback to control the manipulation of the fracture fragments, appropriate alignment and implant positioning.
In fractures of the lower limbs there are mainly two treatment options: closed reduction internal fixation (CRIF) and open reduction internal fixation (ORIF). In CRIF the reduction is carried out without direct exposure and direct visualization of the fracture. The only visual information about the fractured bone is provided by intraoperative fluoroscopy. In contrast, in ORIF, the fracture is exposed surgically by dissecting the overlaying soft tissues. Exposing the fracture, the surgeon can reduce it under direct vision controlling only the end result with the fluoroscope.
For the majority of shaft fractures of tibia and femur, CRIF using intramedullary nails is the treatment of choice. In other cases, for instance where closed reduction is impossible or in institutions where no image intensifier is available, ORIF is used. Closed reduction is preferred because it is less invasive, more respectful of soft tissues, it lowers the risk of greater blood loss, interferes less with the biology of fracture healing, and shows better cosmetic results. However, CRIF is technically more demanding for the surgeon and exposes both the patient and the medical staff to higher radiation doses.
Possible complications of fixing the femoral or tibial shaft include angular and/or rotational malalignment of the fracture fragments as well as incorrect restoration of the bone length. Such complications can cause false posture, or restricted movement and/or excessive strain on the patient's joint structures due to a significant change in the natural anatomical structure and biomechanics. In many cases, the above-mentioned complications could be avoided, if improved intraoperative visualization modalities were available.
A common intraoperative fluoroscope can visualize a circular region with a diameter of a maximum of 12-18 cm. Due to this limitation, the entire fractured bone can only be partially visualized. The shafts of tibia and femur have nearly no morphological or structural inhomogeneities. Consequently, the rotational alignment of the fracture fragments can not be readily determined from medical images containing the shaft alone. The visualization of a proper alignment of the fracture fragments indicates the desirability fo a representation of the whole bone including the shaft and the morphologically inhomogeneous epiphyses, from which the rotation of the fragments and the bone length can be determined
What is therefore needed is an improved method and apparatus for properly positioning fractured bone fragments without having to use open reduction internal fixation.

Method and apparatus for reducing malalignment of fractured bone fragments


A door mirror support structure is provided in which an inner base being die-molded and having a door mirror support portion is mounted on a support plate provided on a door, wherein the inner base has a plurality of frames including at least a pair of vertical frames, a pair of horizontal frames that project outward from lower ends of the vertical frames, a pair of extending frames that have inner ends connected to outer ends of the horizontal frames, extend outward and have outer ends connected to each other, and a linking frame that links the inner ends of the pair of extending frames so as to form the door mirror support portion in cooperation with the extending frames, and the inner base is formed so that spaces are created between the frames.

A door mirror support structure that includes an inner base in which a plate-shaped support plate part mounted on a support plate provided on a door and covering the mounting plate is formed integrally with a plate-shaped arm part that projects sideways from the lower end of the support plate and that can have provided on its extremity part a door mirror support part is known from Patent Document 1.


A percussion drill, and methods of using the same, including a shank in mechanical alignment with a piston-hammer and a valve in fluid communication with the piston-hammer. The percussion drill further includes an internal hydraulic dampening system for reducing the velocity of the piston-hammer when the shank is forward of a power position relative to the velocity of the piston-hammer when the shank is in a power position. Preferably, the internal hydraulic dampening system includes mechanical alignment of a portion of the piston-hammer with a port in fluid communication with the valve, operable to reduce fluid flow into an area surrounding the valve when the piston-hammer is forward of its position relative to its normal operation.

In the art of pressure fluid actuated reciprocating piston-hammer percussion rock drills and similar percussion tools, it is known to provide the general configuration of the tool to include a sliding sleeve type valve for distributing pressure fluid to effect reciprocation of a fluid actuated piston-hammer. There are many applications of these types of drills including, for example, drilling holes having a diameter ranging from about 4 centimeters to about 30 centimeters.
Examples of such drills are generally disclosed and claimed in U.S. Pat. No. 5,680,904, issued Oct. 28, 1997. The percussion rock drill disclosed in the '904 patent includes opposed sleeve type valves disposed on opposite reduced diameter end portions of the reciprocating piston-hammer, respectively, for movement with the piston-hammer and for movement relative to the piston-hammer to distribute pressure fluid to opposite sides of the piston-hammer to effect reciprocation of same. Another advantageous design of a fluid actuated percussion rock drill is disclosed and claimed in U.S. Pat. No. 4,828,048 to James R. Mayer and William N. Patterson. The drill described and claimed in the '048 patent utilizes a single sleeve type distributing valve disposed at the fluid inlet end of the drill cylinder.
In such drills the shank may be moved forward, out of its power position, when drilling is no longer required. Such is the situation when the drill is being pulled out of the hole. During this time, however, the sliding sleeve type valve permits the high pressure fluid to continuously drive the piston-hammer. Accordingly, unless impeded, a front landing of the piston-hammer will strike the forward moved shank. Moreover, as the shank is moved forward there is additional length in which the piston-hammer may gain speed. Thus, in some cases the front landing of the piston-hammer strikes the forward moved shank with a force greater than that experienced during operational drilling. Such excessive impact causes components such as the shank to wear unnecessarily. Accordingly, it is desirable to reduce or eliminate such excessive impact. Prior methods of doing so having included the use of shock absorbers, cushions and/or springs to absorb the energy of the piston-hammer. These devices and methods, however, wear themselves and require replacement.
Therefore, what is needed is an improved internal dampening system that is wear resistant.

Internally dampened percussion rock drill


An electronic device includes an element group which generates a specific identification number and is composed of a plurality of elements. The specific identification number is set based on irregular deviation in electric characteristic of the elements which is caused due to a random failure in a manufacturing process.

The present invention relates to a technology for providing means for assigning a specific identification number to an electronic device.
Assignment of a specific number to an electronic device itself such as a semiconductor chip and the like has been examined in view of manufacturing process management (to record information on when it is manufactured, which wafer or chip it is, and the like). Recently, taking application to IC money, IC tags, ID cards, and the like into consideration, it has been recognized that assignment of a specific number unchangeable from outside to a chip itself is an important key and essential to problem solution. In other words, it is important to provide an artificially unforgeable semiconductor chip. Also, such a method for assigning a specific number to a chip or the like which is simple as far as possible is desired in view of cost reduction.
Under the circumstances, a conventional method has been employed in which a fuse element or a programmable element such as an EEPROM (electrically erasable programmable read-only memory) is provided in a semiconductor chip composing a semiconductor integrated circuit and specific identification information is assigned to the programmable element.
Other novel methods have been proposed such as a method that utilizes a flip flop rise pattern formed due to ununiformity in transistor characteristic which is yield by process variation (see, for example, International Publication No. 02/45139). In detail, a plurality of identification elements having the same aspect are formed in the course of a manufacturing process of a semiconductor integrated circuit device and identification information specific to the semiconductor integrated circuit device or a semiconductor chip is set based on a magnitude relationship in physical quantity of the plurality of identification elements which corresponds to the process variation.

Electronic device and manufacturing method thereof


A shallow trench is formed to extend into a handle substrate of a semiconductor-on-insulator (SOI) layer. A dielectric liner stack of a dielectric metal oxide layer and a silicon nitride layer is formed in the shallow trench, followed by deposition of a shallow trench isolation fill portion. The dielectric liner stack is removed from above a top surface of a top semiconductor portion, followed by removal of a silicon nitride pad layer and an upper vertical portion of the dielectric metal oxide layer. A divot laterally surrounding a stack of a top semiconductor portion and a buried insulator portion is filled with a silicon nitride portion. Gate structures and source/drain structures are subsequently formed. The silicon nitride portion or the dielectric metal oxide layer functions as a stopping layer during formation of source/drain contact via holes, thereby preventing electrical shorts between source/drain contact via structures and the handle substrate.

The present disclosure relates to semiconductor structures, and particularly to electrical isolation structures for ultra-thin semiconductor-on-insulator (UTSOI) devices and methods of manufacturing the same.
Ultra-thin semiconductor-on-insulator (UTSOI) devices refer to semiconductor devices formed on an ultra-thin semiconductor-on-insulator (UTSOI) substrate. A UTSOI substrate can be employed to form various semiconductor devices that derive performance advantage through the reduced thickness of the top semiconductor layer and/or the reduced thickness of the buried insulator layer compared with normal semiconductor-on-insulator (SOI) substrate.
For example, the reduction in the thickness of the top semiconductor layer provides full depletion of the channel, thereby enhancing the electrical control of the channel by the gate electrode and reducing the leakage current in a field effect transistor. Further, the reduction in the thickness of the buried insulator layer can enhance control by a back gate electrode in back-gated field effect transistors.
While UTSOI devices, and especially UTSOI field effect transistors (FETs), are promising candidates for advanced high performance devices, several manufacturing issues need to be resolved before UTSOI devices can be manufactured with high yield. One such issue is erosion of shallow trench isolation structures that are employed to provide lateral electrical isolation between adjacent devices. Specifically, etch steps and/or cleaning steps are repeatedly employed to recess various material layers and/or to clean surfaces before further processing. Shallow trench isolation structures can be etched during such etch steps and/or cleaning steps. Further, underlying portions of the buried insulator layer can be eroded to a degree that a hole is formed underneath a cavity formed by removal of the shallow trench isolation structure and a top surface of a handle substrate is exposed underneath the hole. For example, silicon oxide-based shallow trench isolation structures are susceptible to HF-based etches that can be employed to preclean semiconductor surfaces before epitaxy or formation of a gate dielectric.
Such holes in the buried insulator layer can cause severe yield problems during formation of contacts to source and drain regions. For example, contact via holes can straddle over a sidewall around a hole such that a top surface of the handle substrate, which is typically a semiconductor substrate, is physically exposed at the bottom of the hole in addition to physically exposed surfaces of a source region or a drain region located in or above the top semiconductor layer. A direct electrical short can be formed between the bottom semiconductor layer and the source region or the drain region by a conductive material that is deposited in the hole to form a contact via structure.
Thus, a method of ensuring sufficient electrical isolation between a bottom semiconductor layer of a UTSOI substrate and electrical nodes in a top semiconductor layer of the UTSOI substrate despite the erosion of shallow trench isolation structures and portions of a buried insulator layer during processing steps is needed to provide functional and reliable UTSOI devices.

Dual shallow trench isolation liner for preventing electrical shorts

International Business Machines Corporation

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES


An internal combustion engine has an evaporated fuel purge system for directly feeding evaporated fuel of a fuel tank into an intake pipe of the engine during the engine is running. This system comprises a purge control valve for opening or closing a flow line which connects an upper space of the fuel tank with the intake pipe, a controller for controlling the operation of the valve, a throttle section formed in series with the purge control valve, and pressure and temperature sensors which are located on the upstream side of the throttle section for detecting a pressure and a temperature of the evaporated fuel. When a value detected by the pressure sensor exceeds a predetermined value of pressure for providing a critical pressure ratio at which a flow rate of the evaporated fuel at the throttle section substantially equals to a sonic velocity, the controller opens the purge control valve to cause a purged flow of the evaporated fuel whose flow rate is constant. Simultaneously, the controller calculates a purged flow rate of the evaporated fuel from the detected values of the pressure and temperature sensors and a time period during which the purge control valve is opened. On the basis of the calculated purged flow rate, a reduction correction is made to an amount of the fuel to be supplied to the engine in order to maintain an air-fuel ratio in the optimum condition. The calculated purged flow rate may be indicated.

The present invention relates to an internal combustion engine (hereinafter, referred to simply as an engine) having an evaporated fuel purge system. This evaporated fuel purge system is adapted to allow, fuel vapor produced in a fuel tank to be directly sucked into an intake pipe of the engine in order to dispose of the fuel vapor.
A conventional example of a control method for purging evaporated fuel in a fuel tank or the like is disclosed in, for example, Japanese Patent Unexamined Publication No. 57-52663. Most of conventional evaporated fuel disposal systems, including the system disclosed in the above publication, are provided with charcoal canisters and are adapted to cause fuel vapor produced in fuel tanks to be once adsorbed by active carbon within the charcoal canisters. The fuel vapor thus adsorbed is discharged from the charcoal canisters and sucked into combustion chambers of engines at the time when the fuel vapor will not exert bad influence on the operation of the engines even if the fuel vapor is additionally mixed with intake air, for instance, at the time when the engines are driven under high load. In other words, in the engines with the conventional systems of this kind, the charcoal canisters are used for storage of the evaporated fuel even during the engines are running.
In the conventional system, as described above, the evaporated fuel is once stored in the charcoal canister even when the engine runs, and only when the engine comes into an operating state which is suitable for purging the evaporated fuel, a valve provided on a purge pipe is opened for allowing the fuel vapor to be sucked from the charcoal canister into combustion chambers of the engine. Thus, the charcoal canister is required to have a sufficiently large adsorption capacity, and it is generally difficult to form the canister into a compact size. Also, deterioration in adsorbing ability of the active carbon is a matter to be considered because the canister has to continuously adsorb the fuel vapor. Further, in the case where an amount of production of the evaporated fuel exceeds the adsorption capacity of the canister, there is a possibility that the fuel vapor will be directly discharged to the atmosphere.

Internal combustion engine with evaporated fuel purge system


Serial clock cycle time for a serial read operation in a semiconductor memory is reduced by partitioning the read operation into a sensing operation, a counter operation and an output operation, and conducting all three operations simultaneously in a pipelined fashion. To carry out the new method, the memory effectively is pipelined by providing a read register (92) between the sensing flip-flop (90) and the output latch/driver (96), and by isolating the address counter (48) from the address decoder circuitry (56) by inserting an isolation buffer (52). Additionally, the serial access time is reduced by conducting a look-ahead load (72) of a first tap address at the conclusion of a read transfer cycle, without waiting for the serial clock signal (SC) to begin the read cycle.

A video RAM (VRAM), sometimes called a dual-port RAM, is a DRAM (Dynamic Random Access Memory) having a serial I/O port coupled to a serial access memory (SAM). The SAM permits a block of stored data to be rapidly accessed, while the normal access function of the DRAM is also occurring. The information in the SAM is normally obtained from, or input into, a primary memory on the VRAM. The primary memory may be configured as a DRAM array and is accessed according to DRAM protocols.
Information may be written into the VRAM at DRAM address speeds and output through the serial access port, or vice versa. This is convenient for video applications because some address sequences, such as pixels in a raster scan, are predetermined. An object of the present invention is to increase the speed at which data is output to the serial port in a VRAM.

200
MS
File;900
MS
File
FSS 400;425
FSS 200


A disk divided into a trial writing region, buffer region, read-in region, program region, and read-out region disposed from an inner peripheral side toward an outer peripheral side is rotated at a constant angular speed. A test signal is recorded in the trial writing region and an outer peripheral region disposed outside the read-out region, the recorded test signals are read, and a laser output value is set based on the reproduced test signals of the two regions.

i) Field of the Invention
The present invention relates to an optical disk recording/reproducing apparatus constituted for recording of a signal on a disk using a laser emitted from an optical pickup and for reading of a signal recorded on the disk.
ii) Description of Related Art
Disk players having an optical pickup for reading signals recorded on a disk have become common items, and in recent years optical disk recording/reproducing apparatuses having a constitution providing them with, in addition to signal reproduction capability, a capability of recording a signal on a disk using laser light emitted from the optical pickup have also become commercially available.
Such optical disk recording/reproducing apparatuses use a laser to form a pit on a recording disk. However, in such devices, when laser output is not optimum, the formed pit will be too large or too small. Therefore, a trial writing region is disposed along the inner periphery of disks for use with such optical disk recording/reproducing apparatuses. In such systems, a signal is first recorded in the trial writing region and then retrieved. The reproduced signal is analyzed, and this information is used to set the laser output for recording. Such a technique is disclosed in, for example, Japanese Patent Laid-Open No. Hei 6-76288.
For an operation for recording a signal into a disk, a linear speed is not a defined constant. A technique has been developed in which the recording operation can be performed at constant linear speeds such as four, six, eight, ten, and twelve times the defined linear speed. When the recording operation is performed at a constant linear speed, accurate rotation speed control operation by a spindle motor for rotating/driving the disk must be maintained. As a result, it is difficult to perform recording operations at higher linear speeds.
As a technique for addressing this problem, a technique has been developed in which the rotation speed control operation of the disk during the recording operation is performed at a constant angular speed rather than at a constant linear speed. However, because the linear speed of a disk rotated at a constant angular speed varies widely between the inner and outer peripheries, a difficulty remains in that it is difficult to set the laser output suitable for the recording operation at each speed.

Laser output circuit for optical disk recording apparatus


The present invention is an catalog database system and method in which there are a plurality of catalog objects. Each catalog object contains at least one attribute and at least some of the catalog objects have at least one search path leading to at least one other object. A first object and the attributes of other objects in the electronic catalog are displayed. Those attributes which are defined in the first object and inherited to all descendant objects which are in any search path leading from the first object are displayed as strongly relevant attributes. Those attributes which are defined in at least one object which is in any search path leading from the first object are displayed as weakly relevant attributes. Those attributes which are contained in no objects which are in any search path leading from the first object are displayed as irrelevant attributes. To access a catalog object, a selection of an attribute or attribute value from among those displayed is accepted from a user. A search path from the first object to a second object, in which the selected attribute is defined, is followed and the second object is displayed.

The increasing interest in the use of electronic media for product sales has created a need for product search strategies that are intuitive and easy to use. Most electronic catalogs provide some form of search functionality. This may be as simple as a keyword search. The search statement "find all products with the characters `MP004` in their part number descriptions" is an example of a keyword search. More complex searches, such as parametric searches, are also common. The search statement "find all products which have the parameter `color` equal to `red`" is an example of a parametric search. However, problems arise with such search methods.
Current search methods require that parameter relevance be embedded in the description of a product. This is typical in a relational database implementation, in which the database architect is forced to parameterise all notions in a product domain. For example, assume the notion of color is relevant to all computer products in a database. A relevant notion is one that a person searching for a product will always use in order to search for the particular product desired. If the notion is not parameterised, there is no way to enforce entry of information descriptive of the notion. In the example, assume a free-form text field is provided for the description of the computer. With such a field, there is no way to ensure that each entry contains a description of the color of the computer. The notion of color must be parameterised. A separate field must be created which requires that a value be entered.
It is easy to detect parameterisation by considering the different values assigned to attributes. If the values are diametric, for example, yes/no, includes/doesn't include, available/not available, 5"/6"/no inches, then the catalog architect is using parameter values to represent relevance. By building representations of this nature, the architect is attempting to capture when a feature of a component is relevant to a product and when it is not relevant. For example, assume there are two cameras in a catalog, one with autofocus and one without. To capture the fact that this feature is relevant to only one of the cameras, the positive and negative notions of this feature must be parameterised. An attribute such as "autofocus" must be created and given the value "yes" for one camera and the value "no" for the other camera.
Encoding relevance in this manner is difficult to create and maintain. Each time a feature is represented, the catalog architect must determine values for the attribute, which represents the feature, that not only describe the actual feature, but also describe the relevance of the feature to the product.

Electronic catalog system and method with enhanced feature-based search


An electronic device includes a storing unit which is provided on a battery pack and which retains power information of the battery pack, an acquiring unit which is provided in the main unit and which acquires the power information of the battery pack from the storing unit, and a control unit which is provided in the main unit and which controls the operation of the main unit based on the power information of the battery pack.

1. Field of the Invention
The present invention relates to an electronic device and a battery pack provided therein. More specifically, the present invention relates to a technology that optimizes operation control by acquiring power information of a battery pack.
2. Description of the Related Art
Electronic devices include a type of device in which a main unit including various circuits, such as a driving circuit and a control circuit, is equipped with a battery pack and the main unit is driven by electric power supplied from the battery pack. The type of device is, for example, an information processing device such as a personal computer.
This type of electronic device of the related art includes a device (e.g., Japanese Unexamined Patent Application Publication No. 2003-259191) which detects the type and voltage of an installed battery pack and an ambient temperature around the battery pack, and which controls the device operation in response to the detected battery pack type and voltage, and ambient temperature.
Due to the sophistication, etc., of electronic devices in recent years, the maximum power consumption tends to increase in some types of electronic devices. In some cases, there is a possibility that power consumption may exceed the power that can be supplied of a battery pack. Such an excess power consumption over the power that can be supplied of the battery pack may cause the power to unintentionally and suddenly turn off. The power-off may cause a problem of data loss in, for example, an information processing device such as a personal computer.
Accordingly, in order to prevent the above problem from occurring, in the information processing device of the related art, such as a personal computer, a control circuit provided in a main unit, such as a power saving circuit, measures power supplied from a battery pack to the main unit at the time the power consumption exceeds a power threshold set beforehand, and controls the power of a central processing unit (CPU).
In the case of preventing the unintentional sudden power-off by using the power saving circuit or the like, a problem occurs in that the production cost is increased by the need for the power saving circuit or the like.
When power information of the main unit or the battery pack is changed, a parameter of the power saving circuit must be examined and reset each time.
In addition, it is possible to increase the number of cells in the battery pack in order to cope with a rise in power consumption of the electronic device. However, an increased number of cells enlarges the battery pack, thus increasing the battery pack weight. This also causes a problem of requiring major design changes of the battery installation part in which the battery pack is installed.

This patent is subject to a terminal disclaimer.


A system and method for testing an integrated circuit is provided. In one embodiment, a method includes comparing the signal level of the output signal of the integrated circuit to the signal level of a reference signal, wherein a comparison signal is output, which has a first or a second value depending on whether the actual signal level of the output signal is above or below the actual signal level of the reference signal; determining the value of the comparison signal at a certain time; evaluating the value of the comparison signal determined at the time by way of a default; and outputting an error signal if the determined value of the comparison signal does not correspond to the default.

1. Field of the Invention
The invention relates to an evaluation method and an evaluation device for output signals of an integrated circuit, especially of a digital data signal of a semiconductor storage circuit.
2. Description of the Related Art
In the past, advances in manufacturing integrated circuits have resulted in exponential increase of the clock frequencies. In addition, the data transfer speed of these circuits increased exponentially. Thus, particularly in state-of-the-art semiconductor memories, data transfer rates in the range of 1 Gigabit per second already occur on a data transfer channel.
However, in semiconductor storage circuits operated with high frequencies interfering factors increasingly occur, such as signal cross-talk or electromagnetic pulses rendering detection of a signal difficult.
By internal signal processing of an integrated circuit, signals are processed in a preset manner and output as defined output signals. The amplitude and the behaviour of the output signal of the integrated circuit are defined by corresponding reference voltage levels in the associated component specification. Upon reading the output signal, by way of comparison of the measured voltage level of the output signal to the reference voltage level, it can be verified if the output signal is above or below the reference voltage preset by the specification, respectively. As a result of this comparison, it is decided if a digital output signal represents a logical "1" or a logical "0". Due to various influences, which may occur in a real system, short-term signal variations can occur. This in turn can result in errors in interpretation of the corresponding signals. Therefore, it is necessary to identify such erroneous signals and the optionally also erroneous circuit portions of the integrated circuit. Usually, this is effected with the aid of a compliance test.
In a conventional compliance test an attempt is made to sample the signal with high accuracy in order to obtain an idea of the signal behaviour as accurately as possible. The individual measurement points are stored. Subsequently, the region in which the data eye is opened is determined by way of the measurement data. For testing the signal, it is verified if the mask defined by the component specification fits in the data eye reconstructed from the measurement data. Since the accuracy of such a test method is primarily determined by the amount of acquired measurement data, inevitably, it is necessary to acquire the signal with a sampling frequency and resolution as high as possible. Due to the technical and temporal effort required for such a measurement, the conventional test method is not suitable for the production in high volume. Rather, up to now, the compliance test is performed in a separate procedure succeeding the production. This requires additional test time.
However, detailed acquisition of the time/voltage values is only reasonable in case of characterization of a component, especially, if certain characteristics of the component are to be analyzed by the exact analysis of the data eye. However, for production in high volume, this type of analysis is not required. Here, a simple "pass/fail" result is sufficient, with which a statement is possible of whether the output signal of the concerned component corresponds or not to the specification.

Method and device for verifying output signals of an integrated circuit


Fifth wheel hitch assemblies and fifth wheel hitch adaptors for dampening differential motion between a fifth wheel trailer and a tow vehicle. An upper assembly is formed as a box with an open bottom, and a lower assembly has front, rear, and side plates that extend into the open bottom of the upper assembly. Slide plates are disposed on the front and sides of the upper assembly facing at the front and side plates of the lower assembly. An additional slide plate is disposed on the rear plate of the lower assembly and faces the rear of the upper assembly. The lower assembly and upper assembly are attached to one another by an airspring and at least two diagonally opposed shock absorbers mounted therebetween. A locking mechanism may be included to prevent overextension between the upper assembly and lower assembly when not in use.

Fifth-wheel trailers are generally large, high profile trailers. They are typically coupled to a lead vehicle, such as a pick-up or flat-bed truck, by a fifth-wheel connector assembly mounted on a frame within the bed of the truck so that the fifth-wheel connector is disposed in a plane above that of the bed of the truck. Most such couplers are secured to the bed of the truck. Such permanent attachment of the coupler is problematic when the truck bed is needed for other purposes, such as cargo loading or camper carrying. A typical coupled hitch is not desirable since the connector assembly and frame usually take up a significant amount of space. Moreover, the removal of the assembly and frame from the truck bed typically requires an inordinate amount of time and effort.
Previous efforts to provide a mechanism for coupling allow a fifth wheel to be attached to a ball-hitch, such as a goose-neck hitch disposed at the rear of a tow vehicle, or in the bed of a pick-up or flat-bed truck, in order to avoid the use of a fifth wheel hitch utilizing a significant amount of space in the bed of the tow vehicle. Examples of such adaptors include those disclosed in U.S. Pat. Nos. 5,240,740, 6,024,372, 6,416,073 and 6,776,431, the disclosures of which are incorporated by reference herein. Typically, each of these devices consists of a top structure for connecting to a fifth wheel trailer, a frame extending downwards from the top structure, and a bottom structure for attaching to a ball hitch. While the frames may have a height adjustment, since they are simply metal boxes, these adaptors do not compensate for load conditions or road conditions, which can create discomfort for the driver and passenger when towing and place unnecessary wear and tear on the components.
U.S. Pat. No. 5,785,341, which is incorporated by reference herein, discloses a pneumatic isolator for use in attaching a trailer to a tow vehicle. An airspring is vertically mounted atop a tube extending down to the attachment hitch. The airspring compensates for the up and down motion of the trailer and tow vehicle as the tube slides in an outer tube. A single external shock absorber is used to connect the inner tube to the outer tube and to compensate for the reverse motion of the airspring. Although this design compensates for up and down motion, it does not adequately compensate for forward, reverse or lateral forces acting on the hitch during towing. It also requires permanent attachment to the fifth wheel trailer, preventing the fifth wheel trailer from being used with a standard fifth wheel hitch.
As such, an improved fifth-wheel hitch adaptor that enables a fifth wheel trailer to be attached to a retractable kingpin located in the bed of a tow vehicle (or attached to a hidden coupler mounted under the tow vehicle bed) and that compensates for forces from multiple directions during towing would be an improvement in the art. Such an adaptor that was releasably attachable would be a further improvement in the art.


An improved lubricator valve arrangement for use within a wellbore to allow the passage of tools, such as perforating guns and the like, into the wellbore while it is live. The inclusion of two, independently controllable flapper-type safety valves within the lubricator valve will permit coordinated testing of fluid pressure both above and below the lubricator valve. The upper flapper valve includes a rotational flip-flap arm arrangement to positively open and close the upper flapper valve. The lower flapper valve is equipped with an integrated poppet-style pressure equalizing valve to allow the lower flapper valve to be opened more easily. The direction of opening of the flapper valves precludes or reduces the risk debris-related problems that might prevent or hinder opening of the flapper valves.

1. Field of the Invention
The invention relates generally to the design of lubricator valves used for installing tools in a live oil or gas well on wireline while controlling fluids therethrough.
2. Description of the Related Art
During operation of live oil or gas wells, it is sometimes necessary to run a tool, such as a perforating gun, into the well. Because the well is live, it may be under pressure and, therefore, it is necessary to use a device known as a lubricator valve to allow passage of the tool while controlling the flow of pressurized fluid. Sometimes the lubricator valve is located at the surface, above the wellhead. A surface-based lubricator valve is a pressure-retaining container that is used to hold the wireline tool string before it gets deployed downhole. It is often necessary, however, to locate the lubricator valve below the surface of the well. The need to deploy longer logging tools or perforating guns, for example, is a limitation for surface lubricators due to the required height of the lubricator chamber. Applicable safety requirements specify that downhole wireline running arrangements have a minimum of two safety valves (ball or flapper type) to hold the live well pressure. The upper safety valve is closed to pressure test the wellhead pressure from above. The lower safety valve is used to hold pressure from below. The lubricator valve must facilitate pressure testing from both above and below.
Subsurface lubricator valves of various construction are known. U.S. Pat. No. 4,846,281, issued to Clary et al., for example, describes a dual flapper valve apparatus that is used for protecting a well during a gravel packing operation. One problem with this type of arrangement is that the flapper valves close against a valve seat that is located below the flapper valve member. As a result, the flappers open by pivoting upwardly from the closed position. In the event that there is debris atop either flapper member that has accumulated during the pressure testing process, the flapper member(s) may be difficult to open afterward. A further problem with conventional lubricator valves of this type is that the flapper-type safety valves rely solely upon a torsion spring to close the flapper element. If this torsion spring is damaged, the flapper valves within the lubricator valve will fail to close properly.
An additional problem with conventional lubricator valve designs is that there is no bi-directional sealing. When the flapper members are closed, there is no mechanism to secure the flappers in the closed position. Thus, pressure testing can only be accomplished from a single direction as pressurizing the valve in the opposite direction will open the flapper valves. Pressure testing in both directions is important for ensuring the safety of a lubricator valve.
The present invention addresses the problems of the prior art.

Lubricator valve with rotational flip-flap arm


A method and system for determining low error rate behavior of a device are provided. In one implementation, the method includes obtaining a dominant trapping set of a code, the dominant trapping set containing a plurality of variable nodes, and biasing bits associated with a programmable transmitter that is in communication with the device. The biased bits correspond to the variable nodes of the dominant trapping set. The method further includes transmitting random data from the programmable transmitter to the device, in which the random data includes one or more of the biased bits; measuring a number of error events corresponding to biased bits received by the device that cannot be decoded; and determining a true bit error rate of the device based on the measured number of error events.

The process of information transfer for communication and storage devices typically entails transmission and reception of data over a particular media. The transmission media can be, for example, copper wires, fiber optics, air, or magnetic recording/detection in the case of storage media like a read channel. Given the ever increasing need for more information transfer (or more information storage), the process of information transfer is subject to data corruption. Error control codes, however, permit communication and storage information to be transferred with an arbitrarily low probability of error. For example, iterative error control decoding algorithms provide error protection that nears the Shannon limit. The Shannon limit has long been known as a bound on the performance of error control systems, as described in "Elements of Information Theory", by Thomas M. Cover and Joy A. Thomas, published by John Wiley, 1991, and "A Mathematical Theory of Communication" by Claude E. Shannon, The Bell System Technical Journal, July 1948, both of which are incorporated by reference herein. The benefit of an error control system is that error control systems permit error-free transmission with reduced signal energies, or extended range, or increased density in storage media.
Bit error rate (BER) testing has long been the method of choice used to test the robustness and quality of data transmission over media. Commercial bit error rate testers are available from suppliers such as, for example, Agilent or Tektronix. Commercial bit error rate testing entails sending a sequence of information bits from a transmitter to a receiver, and performing data integrity check on the bits received by the receiver. Many transmission protocols (e.g., Ethernet and SONET) require a very high quality of transmission, or in effect, a very low bit error rate. For example, the latest IEEE 802.an 10 GBase-T standard requires a bit error rate of 1E-12. To perform manufacturing test of an end product (e.g., an integrated circuit (IC), a link, or a server blade), and guarantee such a low bit error rate level for the end product is fairly challenging. Given that errors typically occur on a random basis, error-free transmission of 1E12 bits (e.g., in a 10 GBase-T implementation) from a transmitter to a receiver does not necessarily guarantee a 1E-12 bit error rate. During testing of data transmission, the random nature of error events has to be taken into account and, therefore, multiple cycles of 1E12 bit streams need to be sent between the transmitter and the receiver to ascertain the bit error rate performance of the end product. Moreover, if error control codes are used to improve link quality, the robustness of the error control codes can only be exercised through exhaustive testing which may translate to minutes or hours required to test an end product. Such a long time required for testing an end product corresponds to substantial additional cost to the end product. For example, in some cases, the cost may be realized in a limited large volume production of an end product due to there being a limited number of bit error rate testers to test a sufficient number of the end products.

Method and apparatus for rectifying errors in the presence of known trapping sets in iterative decoders and expedited bit error rate testing


A variable focal length deformable mirror has an inner ring and an outer ring that simply support and push axially on opposite sides of a mirror plate. The resulting variable clamping force deforms the mirror plate to provide a parabolic mirror shape. The rings are parallel planar sections of a single paraboloid and can provide an on-axis focus, if the rings are circular, or an off-axis focus, if the rings are elliptical. The focal length of the deformable mirror can be varied by changing the variable clamping force. The deformable mirror can generally be used in any application requiring the focusing or defocusing of light, including with both coherent and incoherent light sources.

Reflective optics are finding increasing use in optical systems due to the transmission losses, chromatic aberrations, lower damage thresholds, and higher B-integral accompanying the use of refractive optics. For example, ultrafast lasers and their applications rely heavily on broadband mirrors, because group velocity dispersion in refractive optics leads to pulse broadening, spectral distortions, and possibly beam breakup. The simplest reflecting objective is the spherical mirror. However, the spherical mirror has undercorrected spherical aberration for distant objects. In addition, coma and astigmatism are present in a spherical mirror when the aperture stop is not at the center of curvature. Parabolic mirrors have several advantages over spherical mirrors for aberration control. As with all conic surfaces, a point object located at one focus can be imaged at the other focus without spherical aberration. In particular, with a parabolic mirror, a distant axial object can form a diffraction-limited image at focus. A disadvantage of most reflective optical systems is that there is generally a central obscuration that can affect the light throughput and image contrast (e.g., Cassegrain and Newtonian type telescopes in astronomy). Therefore, a parabolic mirror with an off-axis aperture may be desirable to keep the focus out of the entering beam.
Commercial lenses and spherical mirrors are typically ground into a spherical shape, which only approximates a parabola at their very center. This leads to aberrations that are inherently present in all spherical optics. However, because of their uniaxial character, aspheric parabolic surfaces are generally much more difficult and costly to fabricate than ordinary spherical surfaces. Aspheric mirrors can be fabricated using computer-controlled diamond turning and traditional polishing methods, but material selection is limited and manufacturing costs can be large.
Fabricating off-axis aspheric surfaces is even more difficult. Currently, off-axis parabolic mirrors are cut from a parent paraboloid at the desired off-axis angle. While this method is feasible for small optics (e.g., 1-3 inch diameter) it becomes increasingly difficult to make large-angle, large-diameter off-axis parabolas. Therefore, almost all large off-axis focusing mirrors have off-axis angles of less than 5 degrees. The fabrication of larger off-axis angles is extremely expensive, because they require very big parent parabolas.
Furthermore, an as-machined mirror is not deformable and, therefore, does not enable variability of the focal length. Such deformable mirrors are highly desirable in imaging, laser projection, and astronomical applications. For these applications, deformable mirrors offer the possibility of improving the flexibility and capabilities of the imaging system while reducing size, weight and potentially cost.
Several prior inventions have used mechanical devices to elastically deform a thin mirror to provide a variable focal length deformable mirror. U.S. Pat. No. 3,972,600 to Cobarg discloses a deformable mirror that uses fluid pressure to elastically deform an edge-supported metal foil to provide a spherical mirror surface. The focal length of the mirror can be easily adjusted by varying the differential pressure across the foil. However, there are risks of fluid leakage and contamination of the mirror surface due to the pressurizing fluid, and the deformation provides a non-parabolic reflecting surface that is not optimum for many applications. U.S. Pat. No. 4,043,644 to Humphrey discloses a deformable mirror that uses a four-point load to elastically deform a substantially spherical mirror plate. The mirror is warped for off-axis use along an axis to provide a substantially toric shape that is not rotationally symmetric and can only approximate a parabolic mirror. U.S. Pat. No. 6,467,915 to Bar et al. discloses a deformable mirror that uses an annular pusher to deform a round mirror plate. However, because the outer edge of the mirror plate is rigidly mounted to a housing in an axial holder, and not simply supported, a non-parabolic surface results.
Therefore, a need remains for a variable focal length deformable mirror that has a parabolic mirror shape. Furthermore, a deformable mirror that enables an off-axis aperture is needed to keep the focus out of the entering beam.