A semiconductor device comprises a semiconductor element having electrodes and metal bumps are attached to the electrodes. The metal bumps include copper cores and gold surface layers covering the cores. In addition, the metal bumps may include gold bump elements and solder bump elements connected together.

1. Field of the Invention
The present invention relates to a semiconductor device, a method of producing the same, and an apparatus for producing the same.
2. Description of the Related Art
With the progress in semiconductor integrated circuits in recent years, semiconductor elements having very many terminals (e.g., not less than 300 terminals) have been placed in the market. Accordingly, it has been strongly demanded to improve the technology for connecting the terminals (electrodes) of a semiconductor element to the terminals (electrodes) of a wiring board, and to reduce the cost.
Technology has been developed for connecting all the electrodes of the semiconductor element to the electrodes of the wiring substrate at one time by utilizing metal bumps. That is, metal bumps such as solder bumps or gold bumps are first attached to the electrodes of the semiconductor element, and the semiconductor element is pressed onto the wiring board, with its face directed downward, so that the metal bumps are joined to the electrodes of the wiring board and the electrodes of the semiconductor element are connected to the electrodes of the wiring board.
The conductors of the integrated circuit of a semiconductor element are formed of aluminum and, hence, the electrodes of the semiconductor elements are generally formed of aluminum. On the other hand, the conductors of a wiring board are composed of copper and, hence, the electrodes of the wiring board are generally formed of copper.
When solder bumps are to be used, a nickel layer and a titanium layer are formed on the aluminum electrodes of the semiconductor element and the solder bumps are joined to the electrodes having a composite structure of the semiconductor element, since solder joins poorly to aluminum. Thereafter, the semiconductor element is pressed onto the wiring board while being heated, so the solder bumps melt and spread on the electrodes of the wiring board, with the result that the solder bumps are surely connected to the electrodes of the wiring board.
When gold bumps are to be used, there is no need to form a nickel layer and a titanium layer on the aluminum electrodes of the semiconductor element unlike the case of using the solder bumps, since gold directly joins to aluminum. However, the gold bumps are attached to the electrodes of the semiconductor element in the form of stud bumps with projections, and, the semiconductor element is pressed onto the wiring board while being heated after the surfaces of the stud bumps are levelled, an electrically conducting adhesive is applied to the surfaces of the gold bumps, so that the gold bumps are connected to the electrodes of the wiring board via the electrically conducting adhesive. The electrically conducting adhesive comprises a mixture of a thermosetting resin and a metal filler mixed therein, and is thermally cured. Thereafter, the semiconductor element and the wiring board are sealed with a sealing adhesive (insulating resin) inserted therebetween.
When solder bumps are to be used, it is necessary to add the nickel layer and the titanium layer onto the aluminum electrodes of the semiconductor element, as described above but not all users of the semiconductor elements are necessarily allowed to apply the nickel layer and the titanium layer as desired, since application of the nickel layer and the titanium layer requires a special facility such as a vacuum chamber. Therefore, the solder bumps often cannot be used when a semiconductor element without a nickel layer and a titanium layer is purchased.
When an electrically conducting adhesive is applied to the gold bumps formed as stud bumps., on the other hand, the levelled surfaces of the stud bumps are not necessarily in parallel with the surface of the wiring circuit. Therefore, electric connection is not accomplished to a sufficient degree despite using the electrically conducting adhesive, and the reliability of connection remains low. Moreover, the materials are used in increased amounts, the steps of production are complex, and the heating must be continued until the resin is cured, hindering the productivity. Besides, in the case where the semiconductor element is defective or the mounting thereof is defective, the semiconductor element must be replaced by peeling the electrically conducting adhesive off the electrodes of the wiring board. However, it is difficult to peel it off after it is once thermally cured, since the electrically conducting adhesive contains a thermosetting resin. This makes it very difficult to repair the semiconductor element or the wiring board.
The object of the present invention is to provide a semiconductor device, and a method and an apparatus for producing the same which permit a semiconductor element to be mounted to a wiring board by a face-down technique, and to provide improved reliability of connections and simplicity of replacement of the semiconductor element.
A semiconductor device, according to the first feature of the present invention, comprises a semiconductor element having electrodes, and metal bumps including cores and metal surface layers covering said cores, said metal bumps being attached to the electrodes of said semiconductor element.
In this case, preferably, the metal surface layers comprise one of gold and solder.
Moreover, the metal surface layer is a plated layer plated on said core. The core comprises one of a metal, an inorganic material and an organic material and has a diameter of not larger than 100 xcexcm, and the metal surface layer has a thickness of not larger than 50 xcexcm. There is further provided a wiring board having electrodes, metal bumps attached to the electrodes of said semiconductor element being connected to the electrodes of the wiring board.
A semiconductor device, according to the second feature of the present invention, comprises a semiconductor element having electrodes, and metal bumps comprising gold bump elements and solder bump elements connected together, said gold bump elements being attached to the electrodes of said semiconductor element.
In this case, preferably, the gold bump element has a first side and a second side opposite to said first side, the first side of said gold bump element being joined to the electrode of the semiconductor element, and the second side of said gold bump element is joined to said solder bump element. The second side of said gold bump element forms a flat surface or a flat surface with a recessed portion. There is further provided a wiring board having electrodes, the metal bumps being attached to the electrodes of said semiconductor element are connected to the electrodes of said wiring board.
A semiconductor device, according to the third feature of the present invention, comprises a semiconductor element having electrodes, and metal bumps comprising gold-containing solder films formed on the electrodes of said semiconductor element and metal bump elements provided on said gold-containing solder films.
In this case, preferably, there is further provided a wiring board having electrodes, the metal bumps attached to the electrodes of said semiconductor element being connected to the electrodes of said wiring board. The metal bump element comprises one of gold and solder. The metal bump element is formed as one of a metal film and a metal ball.
A method of producing a semiconductor device, according to the fourth feature of the present invention, comprises the steps of immersing a semiconductor element having electrodes in a molten gold-containing solder to form gold-containing solder films on the electrodes of said semiconductor element, and forming metal bump elements on said gold-containing solder films to thereby form metal bumps comprising said gold-containing solder films and said metal bump elements.
In this case, preferably, the step of forming the metal bump elements on said gold-containing solder films comprises immersing the gold-containing solder films in the molten solder to form solder films. The step of forming the metal bump elements on said gold-containing solder films comprises immersing the gold-containing solder films in a bath of a molten metal. The step of forming the metal bump elements on said gold-containing solder films comprises joining solid pieces onto the gold-containing solder films.
A method of producing a semiconductor device, according to the fifth feature of the present invention, comprises the steps of performing a process for imparting a fluxing action to the electrodes of the semiconductor element prior to immersing the semiconductor element having the electrodes in the molten gold-containing solder.
In this case, preferably, the process for imparting said fluxing action comprises irradiating the semiconductor element with a plasma. The step of performing the process for imparting said fluxing action comprises cleaning the electrodes of the semiconductor element with a first gas, and forming a compound of a material of the electrodes of the semiconductor element and of a second gas.
A semiconductor device, according to the sixth feature of the present invention, comprises a semiconductor element having electrodes, and metal bumps including gold bump elements having nose-like projections provided on the electrodes of said semiconductor element and solder elements formed on said gold bump elements to cover said projections.
In this case, preferably, there is further provided a wiring board having electrodes, the metal bumps attached to the electrodes of said semiconductor element being connected to the electrodes of the wiring board.
A semiconductor device, according to the seventh feature of the present invention, comprises a semiconductor element having electrodes, and metal bumps including gold bump elements provided on the electrodes of said semiconductor element and first metal layers formed around said gold bump elements to protect said gold bump elements.
In this case, preferably, the first metal layer has a melting point lower than a melting point of said gold bump element. A second metal layer is formed around said first metal layer. The second metal layer has a melting point which is lower than a melting point of said first metal layer by more than 20xc2x0 C. There is further provided a wiring board having electrodes, the metal bumps attached to the electrodes of said semiconductor element being connected to the electrodes of the wiring board.
A method of producing semiconductor devices, according to the eighth feature of the present invention, comprises the steps of attaching gold bump elements to electrodes of a semiconductor element, immersing said semiconductor element in a bath containing a molten amalgam of a mixture of a metal for protecting gold and mercury to form an amalgam layer on said gold bump elements, heating said semiconductor elements to vaporize mercury in the amalgam and to form metal films on the gold bump elements to protect gold, and transferring molten solder elements to said metal films.
A method of producing semiconductor devices, according to the ninth feature of the present invention, comprises the step of attaching gold bump elements to electrodes of a semiconductor element and transferring molten solder elements to said gold bump elements in an environment containing inert gas at an oxygen concentration of not larger than 10,000 ppm.
In this case, preferably, at least one of alcohol, ketone, ester, ether and a mixture thereof is used as a fluxing agent for transferring prior to transferring the molten solder elements. The fluxing agent for transferring comprises a flux obtained by mixing a solid component thereof in an amount of not larger than 10% by weight in an alcohol.
An apparatus for producing semiconductor devices, according to the tenth feature of the present invention, comprises a booth, a molten-solder vessel arranged in said booth so that gold bump elements provided on the electrodes of a semiconductor element can be immersed in said vessel, means for supplying inert gas into said booth, and means for detecting the oxygen concentration in said booth.
In this case, preferably, provision is further made of a flux vessel for transfer disposed in said booth. There are further provided a molten-solder vessel, arranged so that gold bump elements provided on the electrodes of a semiconductor element can be immersed in said vessel, and a support structure, for hanging said semiconductor element, said support structure including a hanging mechanism comprising at least two mutually movably coupled coupling members. The above-mentioned at least two coupling members comprises members that are coupled together like a chain.
An apparatus for producing semiconductor devices, according to the eleventh feature of the present invention, comprises a molten-solder vessel arranged so that gold bump elements provided on the electrodes of a semiconductor element can be immersed in said vessel, and a support structure for hanging said semiconductor element, said support structure including a pump-type adsorption head having an open suction hole for holding the semiconductor element.
An apparatus for producing semiconductor devices, according to the twelfth feature of the present invention, comprises a molten-solder vessel arranged so that gold bump elements provided on the electrodes of a semiconductor element can be immersed in said vessel, and a support structure for hanging said semiconductor element, said support structure including a hanging mechanism comprising at least two mutually movably coupled coupling members and a pump-type adsorption head having an open suction hole for holding the semiconductor element.

Semiconductor device with gold bumps, and method and apparatus of producing the same


A device for coating the internal surfaces of elongate hollow spaces includes a shield substantially corresponding to the cross section of the hollow space and capable of being displaced in the longitudinal direction of the hollow space by means of a bogie connected therewith. The shield is connected with supply ducts for a curable mass being in the plastic state. The supply ducts are provided with outlet openings substantially uniformly distributed about the periphery of the cross section of the hollow space. A blower is provided with a seat for a flexible tube capable of being pressed at the hollow space to be coated and substantially air-tight relative to the inner side and includes a supporting element capable of being stationarily anchored within the hollow space. The shield is provided with a central opening intended for the passage of the flexible tube containing a fiber material in addition to the impermeable layer. The supply ducts are connected with a distributing means for the curable mass carried by the bogie and terminate in pipes arranged about the external periphery of the shield. The outlet openings of the pipes substantially are formed by a cut led obliquely to the longitudinal axes of the pipes, terminating on the pipe enveloping lines next to the internal wall of the hollow space.

1. Field of the Invention
The invention relates to a device for coating the internal surfaces of elongate hollow spaces, such as ducts or channels, which device comprises a shield substantially corresponding to the cross section of the hollow space and capable of being displaced in the longitudinal direction of the hollow space by means of a bogie connected therewith, which shield is connected with supply ducts for a curable mass being in the plastic state, which supply ducts are provided with outlet openings substantially uniformly distributed about the periphery of the cross section of the hollow space, wherein a blower is provided with a seat for a flexible tube capable of being pressed at the hollow space to be coated and substantially air-tight relative to the inner side and comprises a supporting means capable of being stationarily anchored within the hollow space. The invention, furthermore, relates to a process for applying a coating of a fiber-reinforced curable mass including a binder onto a substrate, in particular, the internal wall of a channel or the like, using such a device.
2. Prior Art
With known processes of this type, such fibers in the preparation of a curable mass are admixed, optionally in the form of bundles of fibers held together by aid of a binder dissolving in the mass. In doing so, the problem arises that a sufficiently uniform distribution of the fibers, whose specific weight usually is considerably lower than that of the mass, in the same frequently is only very hard to obtain involving considerable expenditures. Moreover, the filling ratio of the mass with fibers obtained in this manner is rather moderate.
A method of this type has become known, for instance, from WO-A 93/13350, wherein a layer of mutually engaging fibers is applied onto a substrate and this layer is soaked with a mass being in the plastically deformable state, whereupon the mass is allowed to cure.
Furthermore, devices for coating the internal walls of hollow bodies, e.g., channels are known. Examples for such devices are described, for instance, in DE-A 39 31 775 or DE-A 41 26 310.
In the known devices, there is provided a tubular encasing which externally comprises a peripheral seal projecting towards the internal wall of a channel to be coated. Viewed in the advance direction of the device, the outflow openings of the supply ducts for the curable mass are provided behind the seal. That region is followed by a region in which an elastically widenable flexible tube attached to the outer side of the encasing is inflatable by compressed air in order to distribute, and coarsely smooth, the emerging curable mass. Behind that region, a shield is arranged, which is comprised of spreadable segments and serves to smoooth the coating applied. In the device moving in the advance direction, the shield constitutes the end of the same.
Such a device involves the drawback of being very heavy and bulky. Due to a considerable friction prevailing between the seal and the inflatable flexible tube and, last but not least, between the shield and the internal wall of the hollow space to be coated, the device, moreover, requires a highly efficient actuating means in order to be able to move the device at all, which brings about problems also in respect of the transmission of the driving force to the internal wall of the hollow space. In addition, coatings strongly enriched with fibers cannot be readily applied by means of said known devices.

Process and device for production coatings

Sewer Coating Systems Verbundmaterialienentwicklungs-und Vertriebsgesellschaft m.b.H.


Method and apparatus for the production of an ammunition projectile having enhanced properties relating to delivery of the projectile along its flight path from a weapon to, and upon striking, a target by reason of the formation of a meplat cavity in the leading end thereof which, from projectile to projectile, exhibits a uniform size, uniform geometry and which is free of extraneous material, and which is concentric with the centerline (spin axis) of the projectile. A round of ammunition is disclosed.

It is well recognized in the art that the accuracy of delivery of projectiles fired from weapons, particularly rifles and pistols, is at least in a substantial part, a function of the rotational stability (at times referred to as "spin stability" of the projectile in the course of the flight of the projectile from the weapon to a target. This factor is particularly important when employing weapons having rifled barrels, i.e., internally helically-grooved barrels.
In similar manner, it is well known in the art that provision of an open tip in the leading end of an ammunition projectile has a profound effect upon the degree and nature of the structural reaction of the projectile upon it striking an intended target. For example, provision of an open tip (herein referred to as a "meplat cavity") in the leading end of a projectile is known to increase the degree of structural change of at least the leading end of the projectile when it strikes a target of a given type. Such changes are to a degree preselectable by weakening of the walls of the meplat cavity employing slits or slots which extend partially through the wall thickness of the meplat cavity, shaping the cross-section of the meplat cavity as a rosette or other geometry, etc. All such known techniques for altering the meplat cavity suffer from the problem of uniformity of the structure of the meplat cavity in the course of its formation and/or modifications to the meplat cavity following its initial formation. Such non-uniformity may take many forms or combination of forms, but all of these are subject to disruption of the spin stability of the projectile during its flight from the weapon to the target, or in the very least, lack of uniformity of spin stability from projectile to projectile of any given production lot of projectiles produced. Similarly, such known prior art techniques commonly fail to provide consistency of projectile deformation, even within the same production lot of projectiles.
Additionally, in the known prior art for the manufacture of ammunition projectiles, there exists the problems of inconsistency in the overall length of a given type of projectile occasioned by the mode of development of the meplat cavity of the projectile, including concomitant inconsistency (a) in the overall length of a metal jacketed core type projectile, (b) in the outer diameter and/or the inner diameter of the outward opening of the meplat cavity, and/or (c) in the rate of reduction in the velocity of the projectiles of a given type in the course of their flight from the weapon to a target.
These and other problems associated with the meplat cavities of the prior art projectiles, and the methods employed in the production of such projectiles, ultimately adversely affect the ballistic of the projectiles.

Method for enhancement of the flight path of an ammunition projectile and product

Doris Nebel Beal Inter Vivos Patent Trust


A pressureless pipe and polymer composition for making such a pipe as well as the use of the polymer composition for pressureless pipes and supplementary parts, are disclosed. The polymer composition is characterized in that the polymer comprises a multimodal ethylene polymer including a copolymer of ethylene and a C4-C10 &agr; -olefin comonomer; the ethylene polymer has a total density of 953-958 kg/m3 and a MFR5 of 0.2-2.0 g/10 min; the ethylene polymer has a modulus of elasticity, determined according to ISO 178 of 1300-1700 MPa; the ethylene polymer has a resistance to slow crack growth, determined according to ASTM F 1473 of more than 1.5 hrs.

Pipes of polymer material are frequently used for various purposes, such as fluid transport, i.e. transport of gases or liquids. The fluid may be pressurised such as when transporting natural gas or tap water, or not pressurised such as when transporting sewage (wastewater), drainage (land and road drainage), for storm water applications or for indoor soil and waste. Moreover, the transported fluid may have varying temperature, usually within the temperature range from about 0° C. to about 50° C. Pressureless (not pressurised) pipes may also be used for cable and pipe protection.
Such pressureless pipes are herein also referred to interchangeably as sewage pipes and pressureless sewage pipes.
The term "pipe" as used herein is meant to comprise pipes in a broader sense, as well as supplementary parts like fittings, valves, chambers and all parts which are commonly necessary for e.g. a sewage piping system.
Pipes according to the present invention comprise single or multilayer pipes, where for example one or more of the layers is a metal layer and which may include an adhesive layer. Structural-wall pipes, such as corrugated pipes, double-wall pipes with or without hollow sections, are also comprised by the present invention.
Different requirements are imposed on pipes for the transport of pressurised fluids (so-called pressure pipes) and pipes for the transport of non-pressurised fluids such as sewage (so-called pressureless pipes). While pressure pipes must be able to withstand an internal positive pressure, i.e. a pressure inside the pipe that is higher than the pressure outside the pipe, pressureless pipes do not have to withstand any internal positive pressure, but are instead required to withstand an external positive pressure, i.e. the pressure outside the pipe is higher than the pressure inside the pipe. This higher outside pressure may be due to the earth load on the pipe when submerged in the soil, the groundwater pressure, traffic load, or clamping forces in indoor applications. There is thus a clear distinction between pressure pipes on the one hand and pressureless pipes on the other hand. As mentioned above, the present invention relates to pressureless pipes.
Pressureless pipes such as sewage pipes are made in a variety of dimensions from about 0.1 to about 3 m diameter and of a variety of materials such as ceramics (vitrified clay mainly), concrete, polyvinyl chloride (PVC), and polyethylene (PE). While ceramics and concrete are low-cost materials, they are unfortunately heavy and brittle. There has therefore been a trend during recent years to replace sewage pipes of ceramics or concrete with pipes of polymer materials such as PVC or PE. While PVC costs less than PE per unit weight, PE has advantages over PVC in other respects by having a lower density and thus a lower weight per meter pipe, having superior low temperature properties, and being weldable. Up to now unimodal polyethylene has been used for making sewage pipes of PE.
Sewage pipes of PE must fulfil at least two fundamental criteria. Firstly, they must show sufficient stiffness to withstand the earth load without any help from internal pressure. The stiffness of the pipe is derived primarily from the pipe material and as a measure of the stiffness may be taken the elasticity modulus (or modulus for short) of the pipe material. The higher the modulus of the pipe material, the stiffer the pipe will be. The stiffness of the pipe may be further enhanced by the design of the pipe wall, e.g. by corrugating the pipe. Secondly, the pipe should not be brittle, because if it is too brittle the pipe will fail due to brittle cracking. A measure of the brittleness of the pipe is its resistance to slow crack growth. The higher the resistance to slow crack growth, the better.
When a material with a higher modulus is used a thinner pipe wall may be used while obtaining the same or higher (ring) stiffness as a lower modulus pipe with a thicker pipe wall.
Thinner pipe walls are more sensitive to cracks since any damage or notch on the pipe surface will propagate easier through the pipe wall. Structured-wall pipes (corrugated, ribbed, twin-wall pipes, etc.) are most sensitive to cracks and the slow crack growth properties of the material since the structured pipe design often consists of thin sections.
Structured-wall pipes includes for example single-layer corrugated pipes, ribbed pipes, twin-wall pipes with hollow sections, multilayer pipes with or without hollow sections or foamed layers, and spirally wound pipes with or without hollow sections with smooth or corrugated pipe design.
Basically, pipes with thin sections, either smooth solid-wall pipes of smaller diameters or structured-wall pipes with thin sections are more sensitive to cracks. Due to the high and 3-dimensional structure of structured-wall pipes also the stresses are locally higher when subject to external load conditions compared to smooth solid-wall pipes, i.e. larger sensitivity to cracks.
The stiffness and brittleness are two contradictory properties. Accordingly, the stiffer a pipe is, the more brittle it will normally be. Thus, a high modulus is usually accompanied by a low resistance to slow crack growth. As an illustration, the modulus of the unimodal PE materials hitherto used for pressureless pipes has been limited to about 1100 MPa, because at this level the slow crack growth is only 1.5 hrs, measured according to ASTM F 1473 (2.8 MPa/80° C.).
In view hereof there is a need for an improved pressureless pipe of a polymer material that combines a high stiffness and a low brittleness, i.e. has a high modulus and a high resistance to slow crack growth.
Further, pressureless pipes are often exposed to high as well as low temperatures. They must therefore be durable within a wide range of temperatures which means that they should display a high impact strength, particularly at low temperatures.
In this connection it should be mentioned that through EP 1 192 216 (which corresponds to WO 01/02480) a polyethylene moulding material is known which is used for gas and water pipes. This polyethylene moulding material has a bimodal mass distribution, a total density of at most 0.948 g/cm3, and a melt flow index, MFI190/5 of at most 0.2 dg/min. The polyethylene moulding material comprises 35-65% by weight of a low molecular ethylene homopolymer with a viscosity number VZA of 40-90 cm3/g, a melt flow index MFI190/2.16 of 40-2000 dg/min, and a density of at most 0.965 g/cm3; and 35-65% by weight of a high molecular ethylene copolymer with a viscosity number VZB of 500-2000 cm3/g, a melt flow index MFI190/5 of 0.02-0.2, and a density of 0.922-0.944 g/cm3. The high molecular ethylene copolymer preferably contains 2.5-4% by weight of a comonomer with 4-10 carbon atoms. Furthermore, the fraction of the polyethylene moulding material recovered in a TREF analysis at 78° C.±3 K has a mean molar mass of at most 200 000 g/mol. It should be pointed out that this reference relates to pressure pipes in contrast to the present invention which relates to pressureless pipes.
Other documents describing the technical background which might be of interest are EP 1 146 079, WO 00/01765, WO 00/22040 and WO 03/102075. However, all these references relate to pressure pipes in contrast to the present invention which relates to pressureless pipes.


A method of fabricating a semiconductor device, including the steps of (a) forming a channel at a surface of a semiconductor substrate only in the center of a region X which physically and electrically isolates adjacent regions Y in each of which a device is to be fabricated, and (b) forming a silicon oxide layer over the region X for physically and electrically isolating the adjacent regions Y from each other. The method suppresses dimensional shift and occurrence of a stress, and further makes it difficult for the reverse narrow channel effect to occur only by adding the small number of additional steps thereto.

1. Field of the Invention
The invention relates to a method of fabricating a semiconductor device, and more particularly to such a method using local oxidation to thereby physically and electrically isolate regions from each other in which a device is to be fabricated.
2. Description of the Related Art
Several proposals have been made in order to prevent dimensional shift and decrease stress for a semiconductor fabricating process in which local oxidation is to be used for physical separation of regions in which a device is to be fabricated. Hereinbelow will be explained some of such proposals as prior art.
Japanese Unexamined Patent Public Disclosure No. 2-119137 has suggested a method for fabricating a MOS transistor. In this method, as illustrated in FIG. 1A, on a silicon substrate 301 is deposited a silicon oxide layer 302, then a silicon nitride layer 303 on the silicon oxide layer 302, and further a photoresist mask 304 on the silicon nitride layer 303. Then, the silicon nitride layer 303 together with the silicon oxide layer 302 are selectively removed by means of anisotropic etching, and at the same time are formed channels 305. Then, ion-implantation is carried out to the channels 305 to thereby form channel stopper layers 306.
Then, as illustrated in FIG. 1B, oxidation is selectively carried out with the silicon nitride layer 303 serving as a mask to thereby form oxide layers 307 in the channels 305, which physically and electrically isolates regions 320 from each other in which a device is to be fabricated. Then, both the silicon oxide layer 302 and the silicon nitride layer 303 are removed. Finally, the oxide layers 307 and the exposed silicon substrate 301 are covered with a gate oxide layer 308, which is in turn covered with a gate interconnection 309. Thus, a MOS transistor is completed.
Japanese Unexamined Patent Public Disclosure No. 63-217640 has also suggested a semiconductor fabricating method. In this method, as illustrated in FIG. 2A, on a silicon substrate 401 are successively deposited a silicon oxide layer 402, a polysilicon layer 403 and a silicon nitride layer 404 in this order. Then, the silicon nitride layer 404, the polysilicon layer 403 and the silicon oxide layer 402 are selectively removed by etching, thereby these layers 404, 403 and 402 do not exist in regions 410 which physically and electrically isolate regions 411 from each other in which a device is to be fabricated. Then, the exposed silicon substrate 401 is oxidized to thereby thin silicon oxide layers 405 within the regions 410.
Then, a silicon nitride layer 406 is deposited over the thin silicon oxide layers 405 within the regions 410. Then, as illustrated in FIG. 2B, the silicon nitride layer 406 is etched so that the silicon nitride layer 406 remains only along sidewalls of the deposited layers 402, 403 and 404. As a result, the polysilicon layer 403 is entirely covered with the silicon nitride layers 404 and 406. Then, regions in which no polysilicon layer exists are oxidized with the polysilicon layer 403 covered with the silicon nitride layers 404 and 406 serving as a mask, as illustrated in FIG. 2C. Thus, as illustrated in FIG. 2D, there are formed oxide layers 407 serving as regions which physically and electrically isolate active regions 408 in which a device is to be fabricated.
Japanese Unexamined Patent Public Disclosure No. 4-58532 has suggested another method of fabricating a semiconductor device. In this method, as illustrated in FIG. 3A, on a silicon substrate 501 are successively deposited a silicon oxide layer 502, a silicon nitride layer 503 and a silicon oxide layer 504 in this order. Then, the silicon nitride layer 503 and the silicon oxide layer 504 are etched only in regions 520 which will physically and electrically isolate regions 521 from each other in which a device is to be fabricated, so that a reduced thickness of the silicon oxide layer 502 remains. Then, the thus residual silicon oxide layer 502 is etched by means of wet etching, by which is also formed spaces 507 having a length of approximately 100 angstroms, beneath the silicon nitride layer 503. Then, a resultant is entirely covered with a silicon nitride layer 505 for use of off-set formation, which is further entirely covered with a silicon oxide layer or an HTO layer 506, as illustrated in FIG. 3A.
Then, as illustrated in FIG. 3B, the HTO layer 506 and the silicon nitride layer 505 are back-etched to thereby form sidewalls 508 along the deposited layers 502, 503 and 504. Then, ion is implanted to the exposed silicon substrate 501 to thereby form impurity layers 509. Then, the sidewalls 508 composed of the silicon oxide layer 506, and the silicon oxide layer 504 are removed, as illustrated in FIG. 3C, and then there are formed oxide layers 510 which physically and electrically isolate the regions 521 from each other in which a device is to be fabricated, as illustrated in FIG. 3C. Finally, as illustrated in FIG. 3D, the silicon nitride layer 505, the silicon nitride layer 503 and the silicon oxide layer 502 are removed.
The first mentioned prior art has just a one step more than than LOCOS separation, specifically, a step of etching a silicon substrate. However, the selective oxidation causes dimensional shift because sidewalls 301a of the silicon substrate 301 in the channels 305 are also oxidized. In addition, the oxide layers 307 for isolating the regions 320 from each other are formed to be a barrel in shape, and thereby electric field is concentrated to ends 310 of the channels 305 with the result that a threshold voltage of a fine transistor is lowered. Thus, the firstly mentioned prior art has a problem like this which is so-called reverse narrow channel effect.
In the second mentioned prior art, a stress can be relaxed to some degree by forming the silicon oxide layer 405 beneath the silicon nitride layer 406, however, the number of steps is increased because there are additionally required the steps of forming the silicon oxide layer 405, forming the silicon nitride layer 406 and carrying out etching back. In addition, though the silicon oxide layer 405 can relax a stress to some degree when the oxide layers 407 are formed, the relaxation of stress is not sufficient because the dimensional shift is suppressed by the silicon nitride layer 406. Furthermore, similar to the first mentioned prior art, the second mentioned prior art has also a problem of the reverse narrow channel effect because the oxide layers 407 are formed to be a barrel in shape.
The third mentioned prior art makes it possible to relax a stress to some degree by forming the spaces 507. However, the method is required to have additional steps such as steps of etching in order to form the spaces 507, forming the silicon nitride layers 505 and the silicon oxide layers 506, and etching-back the layers. In addition, this method has smaller ability of physical separation of regions in which a device is to be fabricated than the other methods because the silicon substrate 501 is not etched. Furthermore, when a surface step of the silicon substrate 501 is intended to be made smaller after the formation of the oxide layers 510, ends 510a of the field oxide layers 510 are sunk below the surface of the silicon substrate 501, as illustrated in FIG. 3D. Similar to the first and second mentioned prior arts, the third mentioned prior art has also a problem of the reverse narrow channel effect.
Thus, the conventional art cannot simultaneously solve the problems of the relaxation of a stress, the dimensional shift, the increase of the number of fabrication steps, and the reverse narrow channel effect.

Method of fabricating semiconductor device


A method for removing electrostatically charged particles that are difficult to separate from a gas flow within one or more high-voltage fields, wherein only one high-voltage supply source is used for these high-voltage fields. The flows to be cleaned are successively ionized in an ionizing region and the particles are separated in a separating region within the one or more high-voltage fields, wherein the field strength of the ionizing region is weaker than the field strength of the separating region.

1. Field of the Invention
The present invention relates to a method of removing electrostatically charged particles that are difficult to separate from a gas flow within one or more high-voltage fields, wherein only one high-voltage supply source is used for these high-voltage fields. This is particularly applicable to such particles which by virtue of their physical/chemical properties partly or completely elude the otherwise highly efficient separation in a conventional electrostatic filter or precipitator operating according to the Cottrell principle.
2. Description of the Related Art
As is known, in an electrostatic filter operating in accordance with the so-called Cottrell principle, the charging and transporting of the particles to be separated as well as their deposition on specially shaped precipitation electrodes is carried out in an electrical field, wherein, after an adequate accumulation or agglomeration, the particles are removed from the precipitation electrodes either by mechanical shaking (dry cleaning) or by flushing (wet cleaning). If necessary, several electric fields of the type described above are connected in series with or parallel to each other to achieve the desired overall separating capacity.
The problem of particles that are difficult to separate can be attributed both to the chemical/physical properties of the particles which lead to an insulating layer on the precipitation electrodes and/or to the fact that, due to the electrical flow turbulence or the so-called electrical wind associated with a high current density, as a result of gas ionization in the region between the charging and separating electrodes it is more difficult to deposit on the precipitation electrodes that proportion of the particles which have a grain size of <10 .mu.m. At the same time, it is known that as a consequence of the charging mechanism, namely the so-called impact or field and diffusion charging, a pronounced minimum particle fraction separation output occurs. To counteract the problem of an electrical flow turbulence caused by electrical wind, so-called 2-stage electrostatic filters have been developed, wherein the charging and the separation of the particles is carried out in consecutively connected separate electrical fields. The disadvantage of this method include the required spatial separation of the stages and the supply of different electrical high-voltages.

Method for the electrical charging and separation of particles that are difficult to separate from a gas flow

Apparatebau Rothemuhle Brandt & Kritzler GmbH


In a thixocasting process, the following steps are used: a step of subjecting, to a heating treatment, an Al-Si based alloy material having a hypo eutectic crystal composition and a characteristic that a first angled endothermic section appearing due to the melting of a eutectic crystal and a second angled endothermic section appearing due to the melting of a component having a melting point higher than a eutectic point exist in a differential calorimetric curve, thereby preparing a semi-molten Al-Si based alloy material having solid and liquid phases coexisting therein; a step of pouring the semi-molten Al-Si based alloy material into a cavity in a casting mold under pressure; and a step of solidifying the semi-molten Al-Si based alloy material under pressure. When the temperature of a rise-start point in the first angled endothermic section is represented by T.sub.1, and the temperature of a drop-end point the first angled endothermic sections is represented by T.sub.2, the casting temperature T for the semi-molten Al-Si based alloy material is set in a range of T.sub.1 .ltoreq.T.ltoreq.T.sub.2. Thus, the fine precipitation of a primary crystal Si phase can be realized to provide an increase in strength of an aluminum alloy cast product.

1. Field of the Invention
The present invention relates to a thixocasting process, and particularly, to an improvement in a thixocasting process which involves subjecting an aluminum alloy material to a heating treatment to prepare a semi-molten aluminum alloy material having a solid phase (which is a substantially solid phase and this term will also be applied hereinafter) and a liquid phase coexisting therein, pouring the semi-molten aluminum alloy material into a cavity in a casting mold under pressure, and then solidifying the semi-molten aluminum alloy material under pressure.
2. Description of the Related Art
There is a conventionally known thixocasting aluminum alloy material which has a hypo eutectic crystal composition and a characteristic that a first angled endothermic section appearing due to the melting of a eutectic crystal and a second angled endothermic section appearing due to the melting of a component having a melting point higher than a eutectic point in a differential calorimetric curve. In a thixocasting process using such material, if the temperature of a drop-end point in the first angled endothermic section is represented by T.sub.2, and the temperature of a peak in the second angled endothermic section is represented by T.sub.3, the casting temperature of the semi-molten aluminum alloy material is set in a range of T.sub.2 .ltoreq.T.ltoreq.T.sub.3.
The reason why the casting temperature T is set at a relative high level in this manner is for the purpose of decreasing the solid phase proportion in the semi-molten aluminum alloy material to improve the castability of the latter.
In this case, the metallographic structure of the resulting aluminum alloy cast product comprises an .alpha. phase formed by the solidification of the solid phase, and a matrix, i.e., a .alpha.-.beta. eutectic crystal phase formed by the solidification of the liquid phase. The aluminum alloy cast product has a mechanical characteristic depending upon the metallographic structure thereof.
To further enhance the mechanical characteristic of the aluminum alloy cast product, it is contemplated to cause a .beta. phase to be finely precipitated in the matrix. However, it is impossible to realize the fine precipitation of the .beta. phase by the conventional process.
To achieve a further increase in strength and a reduction in weight of the aluminum alloy cast product, an Al-Mg.sub.2 Si based alloy material as an aluminum alloy malleable material may be used as a thixocasting aluminum alloy material. In this case, if the content of Mg in the Al-Mg.sub.2 Si based alloy material, i.e., the Mg.sub.2 Si content is too small, the liquid phase amount is insufficient due to the appearing of only a single angled endothermic section in the differential calorimetric curve. For this reason, a shrink cavity is liable to be produced around a spherical .alpha.-Al portion of the aluminum alloy cast product. On the other hand, if the Mg.sub.2 Si content is too large, the following problem is encountered: a large amount of bulky brittle Mg.sub.2 Si crystals exist in the aluminum alloy cast product, and the liquid phase content is increased, so that the amount of hydrogen dissolved in the liquid phase is increased. For this reason, blow holes are liable to be produced in the aluminum alloy cast product, thereby causing a reduction in strength of the aluminum alloy cast product.
Further, a thixocasting aluminum alloy material is also used which contains a relatively large amount of Sr added thereto. The reason why the Sr content is defined is to reliably finely divide the metallographic structure of the matrix produced by the solidification of the liquid phase and to increase the electric resistance value of the aluminum alloy material to enhance the red-heated degree of the semi-molten aluminum alloy material by an induction heating. However, there is a problem that if the amount of Sr added and the shear rate of the semi-molten aluminum alloy material in the cavity are unsuitable, the toughness of the aluminum alloy cast product is largely lost.
Yet further, there is a conventionally known thixocasting aluminum alloy material having a characteristic that a first endothermic section appearing due to the melting of a eutectic component and a second endothermic section appearing due to the melting of a component having a melting point higher than a eutectic point exist in a differential calorimetric curve. If the maximum value of the distance between a straight line interconnecting a melt-start point of the eutectic component and a melt-end point of the high-melting component and the first endothermic section is represented by t, and the maximum value of the distance between such straight line and the second endothermic section is represented by u, the ratio u/t of the maximum value u to the maximum value t is in a range of u/t>0.1.
However, the known semi-molten aluminum alloy material suffers from the following problem: The high-melting component is colloidal and is in a softened state. In addition, since the ratio u/t is in the range of u/t>0.1, the amount of heat of the solidification of the high-melting component is large and hence, the time until the solidification of such component is relatively long. Due to these facts, the high-melting component is agglomerated to cause a deterioration in the fluidity of the semi-molten aluminum alloy material and hence, casting defects such as a cold shut are liable to be produced in an aluminum alloy product.

Thixocasting process, and thixocasting aluminum alloy material


Many processor architectures include registers in the form of a stacked register file, for holding data used during execution of processing operations. As taught herein, the physical registers forming the stack are organized into banks. One or more of the banks is activated and deactivated, as needed to meet the demands of register allocations.

A register file is a high speed storage structure that is used to temporarily store information. Processors typically include one or more register files, to maintain data or instructions relatively close to the processor core. Register files often serve as a primary source of data for use by a processor's execution resources, and high performance processors often include large register files, to take advantage of their low access latency.
Register management techniques allocate registers to processes, fill the registers from slower storage media, and later empty the registers to other storage media as registers are reallocated to other procedures or functions. For example, data from registers used by a first function may be transferred to other storage, while the first function is inactive, if an active second function requires more registers than are currently available. When control is returned to the first function, registers can be reallocated, although they will typically not be the same registers as used by the function during prior activity. To restore activity for the function, the stored data is loaded into the newly allocated registers from storage. To achieve high instruction/cycle (IPC) throughput, modern processors, such as microprocessors and parallelizing compilers, efficient register renaming, register usage, and passing of function parameters are considerations.
Many devices and applications that utilize microprocessors or compilers or the like have low power requirements. Commonly the register file in processors is a major consumer of power due its large number of ports and high speed. In some processors, this is exacerbated by the large number of registers. Furthermore, as transistor technology shrinks, leakage power—present even in un-accessed portions of the register file—becomes more significant. Commonly, processors provide power to all registers in sets all of the time. Often, unused portions of the register file are deliberately not shut off because these registers hold values that could be used at any time, and would be lost if the registers were powered down.
There is continuing need to design processors that require lower power, for example, for application to portable/handheld devices or other applications that have limited or restricted power sources. In support of this general need, there is a specific need for techniques to reduce the power consumed by the groups of registers of a processor, such as the stacked register file.

Reducing power by shutting down portions of a stacked register file


A touch switch which prohibits a child from actuating heating means, while permitting a child to deactivate heating means. A cooking stove including an electrical capacitance operation switch 10 which switches the cooking stove between an operation state in which an ignition instruction is enabled and a standby state in which the ignition instruction is disabled; the operation switch is used to instruct the cooking stove to be extinguished. When the cooking stove is inactive, a switch circuit 63 selects a resistance element 61 offering a higher resistance to set the cooking stove in a “lower sensitivity set state” in which the operation switch 10 has a sensitivity sl. When the cooking stove is active, the switch circuit 63 selects a resistance element 62 offering a lower resistance to set the cooking stove in a “higher sensitivity set state” in which the operation switch 10 has a sensitivity sh (>sl).

1. Field of the Invention
The present invention relates to a cooking stove comprising heating means, and in particular, to a cooking stove comprising an electrical capacitance touch switch allowing a user to instruct the heating means to be actuated.
2. Description of the Related Art
A cooking stove has hitherto been known which has heating means such as an induction heating coil accommodated below a top plate made of heat resistant glass, to heat a material to be cooked placed on the top plate, wherein an electrical capacitance touch switch constitutes an operation switch for instructing the heating means to be actuated (see, for example, Japanese Patent Laid-Open No. 2003-272816).
The top plate can be flat by employing the electrical capacitance touch switch as an operation switch as described above. This prevents the operation switch from obstructing cooking, thus allowing a user to use the cooking stove more easily and efficiently.
However, if the electrical capacitance touch switch is employed as an operation switch for instructing the heating means to be actuated, it is not necessary to operate the switch with a somewhat strong force as in the case of a pushbutton switch or a rotary switch. Thus, even when a child, who cannot exert a strong force, plays with or inadvertently touches the touch switch for instructing the heating means to be actuated, the touch switch disadvantageously changes from a non-sensing state to a sensing state to start actuating the heating means.
Here, the electrical capacitance touch switch changes from the non-sensing state to the sensing state when an electrostatic object having a capacitance exceeding a predetermined threshold value contacts or approaches a touch area. Thus, the threshold value may be set at a level such that the touch switch does not change from the non-sensing state to the sensing state when a finger of a child, who has a lower capacitance, touches the touch area and changes from the non-sensing state to the sensing state only when an adult's finger, which has a higher capacitance than the child's, contacts the touch area.
However, when the single touch switch is used to instruct the heating means to be actuated and stopped, if the sensitivity of the touch switch is lowered as described above, a child's operation of the touch switch is not accepted even when the touch switch is operated while the heating means is in operation to stop the heating means. Consequently, it is impossible to ask the child to stop the heating means.
It is thus an object of the present invention to provide a cooking stove comprising a touch switch that can prohibit a child from instructing the heating means to be actuated, while permitting a child to instruct the heating means to be stopped.


A pack for notions and/or other relatively small commodities has a converted blank of cardboard or other degradable material and a light-transmitting plastic cover which is separably connected to a container of the converted blank. The converted blank further comprises a plate-like carrier having an opening so that it can be slipped onto a rail or an analogous support in a self-service store, in a workshop or at home. The plane of the carrier is located between the plane of a bottom wall of the container and the plane of a top wall of the cover. The sidewalls of the container forming part of the converted blank are removably confined between the lateral walls of the cover, and the top wall of the cover then overlies the open top of the container. The carrier can be separated from the container to reduce the space requirements of the remaining parts (container and cover) of the pack in a small area. The container can be withdrawn from and reinserted into the cover.

The invention relates to receptacles (hereinafter called packs) which can be utilized for storage and for displaying of notions and/or other relatively small commodities. More particularly, the invention relates to improvements in packs of the type found, for example, in self-service stores for confinement and simultaneous displaying of randomly confined or accurately arrayed groups of commodities in the form of needles, pins, washers, nails, nuts, storage batteries and/or many others within reach of sales personnel and/or prospective purchasers. Still more particularly, the invention relates to packs of the type having a first section made of a degradable material and designed to be suspended on a rod, rail, bar or a like support, and a second section which cooperates with the first section to confine a group of commodities or a single commodity and is normally designed to permit visual inspection of the confined commodity or commodities.
Notions and like commodities are often offered for sale in so-called blister packs wherein the degradable section is made of cardboard or the like and has a flat extension which is provided with an opening to enable a salesperson to slip the extension onto a rail or a like support. A prospective purchaser can remove a blister pack from the rail for the purposes of inspection or for taking to the checkout counter. A drawback of blister packs is that the commodities which are confined between the degradable section and the plastic cover are not readily accessible because the cover is bonded to the carrier in order to prevent accidental spilling or unauthorized removal of the contents. Moreover, a blister pack is rather expensive and, once opened, cannot reassume a state for safe confinement of the entire contents or of the remaining contents of the pack. In addition, the degradable part of a blister pack cannot be readily and/or completely separated from the plastic part. On the other hand, there exists an urgent need for packs wherein the degradable and non-degradable parts can be completely and predictably separated from each other, even before the decomposition of the degradable part begins. This is required by authorities in many countries and in many localities. Thus, the residents of many towns here and abroad are expected to classify refuse into biodegradable and non-degradable components.
Commonly owned U.S. Pat. No. 5,067,611 granted Nov. 26, 1991 to Hagmann et al. discloses a blister pack for storage of needles and like small commodities. The patented pack is constructed and assembled in such a way that it can be opened and resealed as often as desired. Furthermore, a substantial part of the non-degradable section of the patented pack can be readily and completely separated from the degradable section. Withdrawn commodities can be reinserted into the patented pack in the same orientation as in the original pack.


Provided is an activation system for a passenger protection apparatus capable of detecting a collision acceleration accurately and in detail with a simple configuration for appropriately activating apparatus. A satellite sensor unit side converts a detection output from an electronic acceleration sensor into a digital collision acceleration data and sequentially it to a communication line at a predetermined cycle, while an air bag control unit side makes a decision on collision at a front portion of a vehicle on the basis of a central-portion acceleration detected by an acceleration sensor and the collision acceleration data received through the line for the activation of air bags. This configuration enables only the air bag control unit side to make a collision decision without making a collision decision in the satellite sensor unit side, which allows a simple and low-cost system.

1) Field of the Invention
The present invention relates to an activation system for a passenger protection apparatus which is made to activate the passenger protection apparatus in accordance with a behavior of a vehicle.
2) Description of the Related Art
So far, for example, in an air bag system for use in a vehicle, an acceleration of the vehicle is detected through the use of an acceleration sensor in an air bag ECU located at a central portion of the vehicle in its longitudinal directions to make a decision indicating the occurrence of a collision of the vehicle when a result of the acceleration detection exceeds a predetermined threshold so that an air bag is deployed for protecting a passenger(s) (including a driver) from the impact due to the collision. Moreover, in such an air bag system for a vehicle, a mechanical acceleration switch, serving as a collision sensor, is provided in a front portion of the vehicle to transmit a switching signal to the air bag ECU when detecting a collision acceleration above a predetermined value. Still moreover, the air bag ECU changes the above-mentioned predetermined threshold to a value lower than a normal value on the basis of the switching signal, thereby detecting the impact at the front portion of the vehicle securely to spread the air bag.
However, such a mechanical acceleration switch merely outputs a switching signal indicative of only the presence or absence of the collision and this signifies that difficulty is experienced in acquiring the collision acceleration in detail. On the other hand, in place of the mechanical acceleration switch, there has been proposed a technique in which an electronic acceleration sensor is provided in a front portion of a vehicle so that a detailed collision acceleration is detected on the basis of an analog signal from the electronic acceleration sensor.
There is a problem which arises with the employment of such an electronic acceleration sensor functioning as a collision sensor, however, in that noise acting on a communication line between the acceleration sensor and the air bag ECU can considerably throw off the analog acceleration signal to be transmitted from the acceleration sensor.
In consideration of this problem, PCT Japan National Publication No. 2001-515815 discloses a technique in which an evaluation function is provided in a collision sensor unit to make a decision on the occurrence of collision and, when the evaluation function detects and confirms the fact that a collision sensor signal forming a analog signal or a collision signal derived from the collision sensor signal reaches a predetermined value within a predetermined period of time, a code signal is transmitted to an air bag ECU in the form of a digital signal.
However, in the case of the technique disclosed in PCT Japan National Publication No. 2001-515815, because of the collision decision function being provided in the collision sensor unit, in addition to an CPU of the air bag ECU, there is a need to use another CPU in the collision sensor unit, which complicates the system configuration and increases the manufacturing cost.

Activation system for passenger protection apparatus


A system for removing an in-place intravascular device such as a catheter or guidewire from a patient's body lumen such as from a coronary artery and advancing a catheter or other similar device through the vascular system until its distal end is located at a desired location within the vascular system. The system includes an exchange catheter, which may be a dilatation catheter, having a flexible strand forming a loop at the distal end of the catheter which is adapted to be disposed about the guidewire or catheter which is in-place within the patient. The loop is tightened about the elongated intraluminal in-place device to be removed so that the catheter can be advanced over the in-place device until the distal end of the catheter is at a desired location within the patient's vasculature. The catheter may be used to perform a diagnostic or therapeutic procedure such as an angioplasty or a replacement device may be advanced through an inner lumen and out the distal end of the catheter.

This invention is generally related to intraluminal procedures such as coronary angioplasty procedures.
Percutaneous transluminal coronary angioplasty (PTCA) is a widely used procedure for the treatment of coronary heart disease. In this procedure, a balloon dilatation catheter is advanced into the patient's coronary artery and the balloon on the catheter is inflated within the stenotic region of the patient's artery to open up the arterial passageway and thereby increase the blood flow therethrough. To facilitate the advancement of the dilatation catheter into the patient's coronary artery, a guiding catheter having a preshaped distal tip is first percutaneously introduced into the cardiovascular system of a patient by the Seldinger technique through the brachial or femoral arteries. The catheter is advanced therein until the preshaped distal tip of the guiding catheter is disposed within the aorta adjacent the ostium of the desired coronary artery. The guiding catheter is twisted or torqued from the proximal end, which extends out of the patient, to guide the distal tip of the guiding catheter into the ostium. A balloon dilatation catheter may then be advanced through the guiding catheter into the patient's coronary artery until the balloon on the catheter is disposed within the stenotic region of the patient's artery. The balloon is inflated to open up the arterial passageway and increase the flow of blood.
One type of dilatation catheter frequently used in PTCA procedures is an over-the-wire type balloon dilatation catheter which has an inner lumen extending therein adapted to slidably receive a guidewire. When using an over-the-wire dilatation catheter, a guidewire is usually inserted into the inner lumen of the dilatation catheter before it is introduced into the patient's vascular system and then both the catheter and the guidewire are advanced through the guiding catheter to its distal tip which is seated within the ostium of the desired coronary artery. The guidewire is first advanced out the seated distal tip of the guiding catheter into the desired coronary artery until the distal end of the guidewire extends beyond the lesion to be dilatated. The dilatation catheter is then advanced out of the distal tip of the guiding catheter into the patient's coronary artery, over the previously advanced guidewire, until the balloon on the distal extremity of the dilatation catheter is properly positioned across the lesion to be dilatated. Once properly positioned across the stenosis, the dilatation balloon is inflated one or more times to a predetermined size with radiopaque liquid at relatively high pressures (e.g., generally 4-12 atmospheres) to dilate the stenosed region of a diseased artery. After the balloon inflations, it is finally deflated so that the dilatation catheter can be removed from the dilated stenosis and blood flow will resume. Commercial over-the-wire type dilatation catheters including the SIMPSON ULTRA LOW PROFILE.RTM., the HARTZLER ACX.RTM., the HARTZLER ACX II.RTM., the PINKERTON .018.TM. and the ACS TEN.TM. balloon dilatation catheters are available from the assignee of the present invention, Advanced Cardiovascular Systems, Inc. (ACS).
Fixed-wire type dilatation catheter systems are also utilized very frequently in PTCA procedures. This type of dilatation catheter has a guidewire or guiding member secured within it. A fixed-wire dilatation catheter provides a low profile, i.e. small transverse dimensions, because it does not have an inner tubular member which is characteristic of commercially available over-the-wire dilatation catheters. Commercial fixed-wire dilatation catheters including the HARTZLER EXCEL.RTM., the HARTZLER LPS.RTM. and the SLALOM.TM. dilatation catheters are available from ACS.
During an angioplasty procedure with an over-the-wire dilatation catheter, if there is a need to replace the dilatation catheter usually a guidewire extension wire such as disclosed in U.S. Pat. No. 4,827,941 is secured to the proximal end of the guidewire and the in-place dilatation catheter is withdrawn from the patient and removed from the guidewire and the extension wire. A replacement dilatation catheter is mounted onto the extension wire and advanced over the extension wire and the in-place guidewire to the desired location which is usually the prior location of the in-place catheter removed from the patient so that there is no loss of access to the desired location within the body lumen. While this catheter exchange procedure is widely practiced, it is not very convenient.
If a fixed-wire dilatation catheter within a patient needs to be exchanged for another catheter, e.g. because a different size balloon is needed, the only recourse with the prior art was to remove the in-place fixed-wire dilatation catheter from the patient and advance an over-the-wire/guidewire combination or another fixed-wire catheter. This option however, loses all access to the distal location of the original fixed-wire catheter. The guidewire or the fixed-wire catheter must be steered to the desired intraluminal location. In angioplasty procedures it is not uncommon to find that once the original catheter has been removed it is quite difficult, and sometimes impossible to advance a guidewire or fixed-wire catheter to the original location.


The present invention is directed toward a carrying device enabling hands-free transporting of a personal data assistant, cellular telephone, pager, MP3 Player, media player, hand held game, hand held GPS device or any other personal accessory or hand held device that may be attached to the body of a user. The device enables a detachment of the handheld device from a housing while maintaining a secured link of the hand held device to the user's body with and automatic facilitated comfortable adjustment of a secure link of the hand held device, thereby providing hand-free carrying and an elimination of risk of loss from accidental misplacement.

Devices that enable the hands free transportation of personal hand held electronic device have been around in various implementations for quite some time, and most recently have decreased in size, in accordance with the decrease in size of electronic devices, to the point where users of such devices and transportation systems may now attach both to their body. The problem with attaching these devices to the body with belt/body mount systems currently in the market is that these mount systems do not facilitate quick access to the devices that are secured and supported within these mount systems. Most belt/body mount systems have a security function that facilitates securing the device mounted while a user is engaged in a high level of activity such as exercising or driving. This function is a plus when a user is engaged in a high level of activity. However, it may be a detriment when driving for example. It is extremely difficult to gain access to a cell phone, PDA, pager or any other electronic device that is secured within a case when using one hand.
Another problem is that these electronic devices are not immune from theft while engaged with a belt/body mount system. For example in crowded areas, such as on a bus or at sporting events where individuals are constantly bumping into each other, many individuals have expensive devices stolen from pockets or off of a purse or belt mount because, upon removal of the device from the mount, the device is not attached to the secured system. Moreover, many users do not regularly engage the security feature of belt/body mount systems in an effort to cut down on the time required to access the phone. For example if a cellular phone is ringing, calls may be missed while trying to unlock or disengage the security feature on some belt mounts.
Tethering devices have been combined with such belt/body mount system to add another layer of security. Such tethering systems have extendable and retractable cables or lines ("cables"), with many of the cables being automatically retracted under the bias of an internal spring arrangement. United States Patent Application Publication Number US2003/0042348 discloses a retractable tether, which may be used in conjunction with personal communication devices (such as a cell phone, pager or PDA) and a mounting system for the prevention of loss or damage. The retracting tether may be clipped to a belt, pants or purse next to the mounting system in which the device is being held or stored. The retractable tether allows the device to be easily used while connecting to the retracting tether. The problem with such systems is that the retractable tether has to be used in conjunction with an additional clip mount, holster or storage pocket. As such, the tethering system becomes an additional component thereby requiring that individuals use more devices instead of fewer.
As technology has advanced and costs for portable electronic devices have decreased, a growing majority of individuals are relying upon devices such as PDAs, handheld games, GPS devices, portable communication devices, cellular telephones, pagers, MP3 players and other media devices to coordinate their busy lives. Their increasing affordability, accessibility and performance, coupled with decreasing device dimension requirements, have continued to expand the user market.
In the past, most users of such devices were businesspersons. With the explosion of technological advances, almost everyone, including children use at least one of these devices (PDAs, handheld games, GPS devices, portable communication devices, cellular telephones, pagers, MP3 players and other media devices) as part of everyday living. Children carry MP3 players, game players or cellular phones. Parents often rely upon pagers or cellular telephones to coordinate childcare pickups, avoiding potentially lengthy and lonely waits for their children. Furthermore, many individuals consider their wireless telephone to be a lifesaving device to be relied upon in an emergency situation for the ability to place an emergency call without having to locate a payphone.
Accidental loss or destruction of personal communication devices is at the least an expensive, time consuming inconvenience when insurance on such devices does not replace the total cost of such devices and data stored within such devices cannot be reconstructed from other sources. When data is irreplaceable, loss or destruction of such electronic devices can be devastating. Furthermore, the loss and or destruction of a phone because it has been dropped can prevent an emergency call in a potentially life-threatening situation. The prevention of such loss and destruction is of utmost importance.
Therefore it is readily apparent that there is a need for a single personal accessory transportation device that has applicability across all devices, and enables easy accessibility and usage thereof, wherein accidental misplacement or destruction of hand held devices is prevented and hands-free transportation is provided without requiring the use of multiple systems.


A method for impressing holographic images or holograms in the surface of metal objects such as aluminum cans. The surfaces of metal shims and print rolls bearing holograms are hardened as by coating them with thin amorphous diamond coatings or diamond like coatings so the holograms can be embossed into many thousands of metal objects with clarity and consistency.

1. Field of the Invention
This invention relates to pressing or transferring holograms and/or diffraction images into metallic surfaces such as metal cans.
2. Description of the Prior Art
It is well known to manufacture a variety of products having holograms or diffraction images pressed or embossed into them. Such products include credit cards, license plates, consumer packaging, pictures, tickets and the like. See, for example, U.S. Pat. Nos. 4,368,979; 4,684,795; 4,856,857; 4,971,646; 4,999,075; and 5,267,753. Holograms generally mean a diffraction pattern which produces a three-dimensional image. Other diffraction images modify the behavior of light that strikes an object bearing the image without creating a three-dimensional appearance. The term "hologram" is used herein in the broad sense to include diffraction patterns or images as well as three-dimensional holograms and other complex images having different planes of diffraction. The manufacture of holograms, shims or plates is well known in the art as disclosed in U.S. Pat. Nos. 3,733,258; 3,875,026; 3,944,420; and 5,059,499, among others.
Most holograms on credit cards and the like are embossed into a plastic sheet material such as Mylar.RTM. or other polyester which has a thin underlayer of reflective material such as aluminum to produce a reflective hologram. The aluminum is typically vapor deposited onto the substrate. Holograms can also be impressed into thermoplastic layers on durable substrates as disclosed in U.S. Pat. No. 4,913,858. The coated sheet is heated to soften the coating which is decorated using an embossing member to provide a diffraction pattern or hologram.
It is further known to create embossing tools or roller dies bearing holographic patterns which are impressed into aluminum foil, translucent plastics and other materials, as is disclosed in U.S. Pat. No. 5,521,030. That patent discloses a process in which the holographic pattern is etched directly into a durable surface on the tool or die. The patent states that large quantities of holograms can be made from a single die made of high quality steel, chrome, or the like that is used in the roller die. The patent further states that the die may be a flat plate mounted on a substrate, an inside surface of an injection mold, a mandrel, a casting mold, or other surface used for transferring a relief pattern.
It is also known to emboss holograms directly into the outer surface of sheet metal such as aluminum foil and aluminum beverage cans as is disclosed in U.S. Pat. Nos. 4,773,718 and 4,725,111. Those patents explain that the temperature of the aluminum is important for optimizing the embossing process and that the nickel master plate must be many times less deformable at the embossing temperature than is the material being embossed. The patents describe a process in which the aluminum foil and aluminum cans are heated to reduce the yield strength of the metal. The yield strength of the nickel master is relatively constant over the temperature range in which the yield strength of the aluminum in the foil and cans is dramatically reduced. The patents disclose embossing apparatus having a metal embossing plate carried on the outside surface of a wheel which is pressed against a can mounted on a mandrel. The embossing plate is heated by a heater that may be disposed within the wheel. The machine has a plurality of mandrels for cans which are sequentially embossed. The mandrels are preferably cooled. The process disclosed by these patents has not been used commercially despite the desirability of enhancing the decoration of cans.
An improved low cost technique is desired for embossing holograms into metal cans and other objects. Many billions of aluminum beer and beverage cans are made and sold annually, and improved decoration of such cans would improve their marketability. Aluminum cans are made from hard temper aluminum alloys, and the sidewalls of the cans are quite thin such as in the range of about 0.0038 to 0.0042 inch. The cans are typically filled with carbonated beverages which produce pressures of 90-110 psi or more within the cans. The cans are commonly closed with a lid that is secured on the cans by a double seamer that applies a top load of about 100 to 130 pounds on the can during the seaming operation. It is important that the temper and strength of aluminum cans not be unduly reduced during processing as can happen if the cans are heated.
A technique for embossing holograms on cans is needed which adds little to the cost of the cans and which produces consistently high quality images. It is desirable for a manufacturing system to be capable of embossing holograms on approximately 2.5 million cans per day in order to be commercially practicable. Beverage companies and bottlers demand high quality cans and will not accept noticeable variations in the decoration on their cans. Moreover, the commercial can manufacturing and filling processes operate at high speeds of 600 to 2000 cans per minute, and can decoration processes must be statistically in control and capable at such speeds.

Techniques for transferring holograms into metal surfaces


A clock divider circuit receives a first clock signal and frequency divides the first clock signal to generate a second clock signal. The first and second clocks are inputs to multiplexer (MUX) that selects one of the clocks as the MUX output based on the state of a MUX control signal. The MUX output is combined with a latched Freeze clock signal in an AND gate to generate a clock output signal. The state of Bypass logic signal determines which clock signal is selected as the clock output signal. The Bypass logic signal is received in a latch circuit which latches the Bypass logic signal in two series latches one latch latching on the positive edge and one on the negative edge of the MUX output. The output of the second latch is latched in a third latch on when a NOR logic gate signals the first and second clock are concurrently at a logic zero assuring that the MUX output is changed only when both clocks are low. The clock output signal is gated with the latched Freeze clock signal in the AND logic gate. The clock output signal is stopped or started depending on the state of the latched Freeze clock signal. A Freeze clock signal is received in a first latch when the MUX output transitions to a logic one and is latched in a second latch when the MUX output transitions to a logic zero generating the latched Freeze clock signal. The clock output signal is stopped or started when the MUX output is a logic zero assuring that the clock output signal stops at a logic zero or starts on a next positive transition of the MUX output.

The present invention relates in general to circuits for generating and controlling computer clocks and in particular to circuits for selecting clock signals.
Phase-locked loops (PLL""s) have been widely used in high-speed communication systems because PLL""s efficiently perform clock recovery or clock generation at a relatively low cost. Dynamic voltage and frequency scaling is a critical capability in reducing power consumption of power sensitive devices. Scaling, in this sense, means the ability to select high performance with a nominal power supply voltage and a high frequency clock operation or low performance by reducing the power supply voltage and the corresponding clock frequency. Reducing the system power is usually done when performance is not needed or when running from a limited energy source such as a battery. To allow low power operation, the PLL and other circuits must support very aggressive power/energy management techniques. For the PLL this means low power operation while supporting key required features such as dynamic frequency scaling, dynamic voltage scaling, clock freezing and alternate low frequency clocking. Dynamic implies that the PLL is able to support changes in the output frequency and logic supply voltage without requiring the system to stop operation or waiting for the PLL clock to reacquire lock.
Using a PLL or delay-locked loop (DLL) has advantages in a battery powered system because a PLL is able to receive a lower frequency reference frequency from a stable oscillator to generate system clock frequencies. A PLL also allows changing the system clock frequency without changing the reference frequency.
In switching between two or more clocks in a PLL or other logic system it may be important for the switching to be glitch-free. For example, transients that occur on a clock in a computer system may be mistaken by the logic system as a valid clock edge and thus create timing problems or system failures. In a system employing frequency scaling, it is desirable to select between a high frequency clock, and a divided lower frequency clock, and stopping either selected clock and restarting with the selected clock in a glitch-free circuit.
There is, therefore, a need for a circuit for selecting between two synchronous clocks while incorporating a mode for stopping either clock in a known state and restarting a stopped clock on a known transition while assuring glitch-free switching.
A multiplexer (MUX) receives a high frequency clock and a low frequency clock divided from the high frequency clock. A latch circuit receives a Bypass signal which selects one of the clocks. The state of the Bypass signal is latched in a first latch when the output of the MUX transitions to a logic one. A second latch circuit receives the output of the first latch and latches the state of its output when the MUX output transitions to a logic zero. A third latch circuit receives the output of the second latch and latches the state of its output when both the high frequency and low frequency clock are concurrently at a low level. The output of the third latch is the MUX control signal that selects either the high frequency or a low frequency clock while guaranteeing that a cycle with a new clock begins on the first positive logic transition following a state when both clocks are at a logic zero. The output of the MUX is coupled to a logic AND gate that is gated with a latched Freeze clock signal that determines whether the clock output signal is active or is held at a logic zero state. The state of a Freeze clock signal is latched in a fourth latch when the MUX output transitions to a logic one. A fifth latch latches the output of the fourth latch when the MUX output transitions to a logic zero guaranteeing that the MUX output is selected as the clock output signal when the MUX output is a logic zero (starts on the next transition to a logic one) or that the clock is xe2x80x9cfrozenxe2x80x9d low when the clock output signal is at a logic zero, resulting in no glitches. The clock output signal is stopped when it is low and re-started when the MUX output is a logic zero assuring that the clock output signal is glitch-free during switching of the MUX or when a clock output signal is stopped or started.
The foregoing has outlined rather broadly the features and technical advantages of the present invention in order that the detailed description of the invention that follows may be better understood. Additional features and advantages of the invention will be described hereinafter which form the subject of the claims of the invention.

Clock divider with bypass and stop clock

International Business Machines Corporation


Nitrogen is rejected from a pressurised feed gas stream comprising methane and nitrogen by cooling the feed gas stream in a main heat exchanger 10 and rectifying the cooled feed gas stream in a double rectification column 20 comprising a higher pressure rectification column 22, a lower pressure rectification column 24, and a condenser-reboiler 25 placing the higher pressure column 22 in heat exchange relationship with the lower pressure column 24. A pump 50 withdraws a methane product stream from the column 24. The methane product stream is pressurised by the pump 50 and is vaporised in the main heat exchanger 10. The pressurised feed gas stream is expanded with the performance of external work in an expansion turbine 6 upstream of the main heat exchanger 10.

This invention relates to a method and apparatus for rejecting nitrogen from a feed gas stream comprising methane and nitrogen so as to form a methane product.
It is known to extract natural gas from underground reservoirs. The natural gas often contains nitrogen. The nitrogen may be in part or totally derived from nitrogen which has been injected into the reservoir as part of an enhanced oil recovery (EOR) or enhanced gas recovery (EGR) operation. A feature of such operations is that the concentration of nitrogen in the natural gas tends to increase with the passage of time from about 5% by volume to about 60% by volume.
U.S. Pat. No. 4,415,345 discloses a process for rejecting the nitrogen from the methane in a double rectification column operating at cryogenic temperatures. A double rectification column comprises a higher pressure rectification column, a lower pressure rectification column, and a condenser-reboiler placing the top of the higher pressure rectification column in indirect heat exchange with a region, usually the bottom, of the lower pressure rectification column. In the process according to U.S. Pat. No. 4,415,345 a stream of a mixture of nitrogen and methane is cooled at elevated pressure to a temperature suitable for its separation by rectification. A part of the feed gas is liquefied. The resulting gas mixture is separated by rectification. In one embodiment described in U.S. Pat. No. 4,415,345 a double rectification column is employed to carry out the separation. A liquid methane product is withdrawn from the bottom of the lower pressure rectification and is raised in pressure by a pump.
The methane product is typically required at a similar pressure to that at which the natural gas is supplied, for example, typically in the order of 40 bar. With relatively high methane feed purity in the order of 95% it is possible to pump the liquid methane product to about 25 bar upstream of its vaporisation which is effected by indirect heat exchange with the incoming feed gas. The vaporised product methane may be raised further in pressure by compression.
As the mole fraction of methane in the feed gas decays and the mole fraction of nitrogen in it rises, efficient heat exchange between the feed gas stream and the product methane stream can be maintained only at lower product stream pressures. For example, if the purity of the feed gas falls to 40% methane, the product methane stream needs to be vaporised at a pressure of about 9 bar. Difficulties arise in providing a compressor or series of compressors that is able to operate efficiently when its inlet pressure varies within such a wide range of pressures.
It is an aim of the present invention to provide a method and apparatus which ameliorates such difficulties.


Real-time data and event management (RDEM) is implemented on a separate component in supervisory control and data acquisition (SCADA). To assist in upgrades or changes to the SCADA system without compromising RDEM, the RDEM function is performed on a separate card or physical component. When the computer running the SCADA system is upgraded, the RDEM on the separate card and corresponding persistence store is maintained.

The present embodiments relate to real-time data and/or event management (RDEM) in a supervisory control and data acquisition (SCADA) system.
SCADA systems implement industrial processes or industrial control systems. For example, a SCADA system may monitor and control a manufacturing process using communications with sensors, actuators, and field devices (e.g., programmable logic controllers or remote terminal units). The SCADA system provides control capabilities and a user interface for interacting with the control and data acquisition of the process.
Various applications are performed by the SCADA system. A configuration application may be operated as a tool to tag or otherwise label field devices included in the controlled process. Business object applications may monitor progress of a part being manufactured or process being performed. Other application clients may include visualization applications, workflow monitoring, reporting, or communications applications.
The application clients rely on data from the field devices. Rather than requiring calls from different applications to the same field devices, the SCADA system implements real-time data and event management (RDEM). The RDEM implements a memory resident process image in which the states of the objects representing the physical process are kept valid and current in memory. When a change occurs, the change is received by field device gateways and routed to the RDEM for update. The application clients access the RDEM rather than performing calls to the field devices, allowing faster response and less communication load on the field devices. Critical process states which cannot be recovered following a system restart, so called retentive states, are also written to the persistence store during run-time. The RDEM may be configured by a configuration application. When the configuration is modified, the RDEM may write the new configuration to the persistence store.
The performance and reliability requirements of the RDEM make the RDEM one of the most complicated and costly components to develop and test in a SCADA system. Any change in the SCADA system requires extensive testing to make sure RDEM operates without loss of needed data. This often becomes the blocking point in bringing the SCADA system onto a new technology platform. If a new operating system or computing platform is available, the SCADA system is less likely to be upgraded due to the testing requirements.

SCADA system real-time data and event management on a PC card


The invention relates to a method for optical coherence tomography comprising the steps of:                providing of a reference light beam and a measurement light beam,        combining of the reference light beam and the measurement light beam to provide a combined light beam,        modulating of the reference light beam,        sampling of the combined light beam to measure an amplitude of an intensity variation for each sampling position,        adding of the amplitudes to provide an intensity signal for one picture element.        correcting deformations and aberrations either in the electronic, or in the optical domain

OCT is a known technique for non invasive cross-sectional imaging in biological systems. OCT uses coherence interferometry to produce a two-dimensional image of optical scattering from internal tissue micro structures in a way that is analogue to ultra sonic pulse-echo imaging.
In coherence reflectrometry, the coherence property of light reflected from a sample provides information on the time-of-flight delay from the reflective boundaries and back scattering sites in the sample. The delay information is then used to determine the longitudinal location of the reflection sites. The OCT system performs multiple longitudinal scans at a series of lateral locations to provide a two-dimensional map of reflection sites in the sample. Corresponding OCT systems are known from U.S. Pat. No. 5,847,827 and U.S. Pat. No. 6,057,920 and J. Biomed. Opt. 4(1), 157-173 (1996).
A common disadvantage of prior art OCT systems is that a high lateral resolution is inevitably associated with a strong decrease in available scanning depth. The present invention therefore aims to provide an improved method for optical coherence tomography and a corresponding computer program product and arrangement for optical coherence tomography.

Method and arrangement for optical coherence tomography


The present invention relates to a method of forming and transferring a thin film. The method of forming and transferring a thin film according to one embodiment may include a step of bonding a carrier wafer coated with a polymer bonding material to the top of a silicon-on-insulator (SOI) wafer formed by sequentially laminating a backside silicon layer, a buried oxide layer, and a silicon layer; a step of etching the backside silicon layer using the buried oxide layer as an etching barrier, and then selectively etching the buried oxide layer; a step of separating the carrier wafer from the polymer bonding material, and bonding a target wafer including an oxide layer to the bottom of the silicon layer through direct bonding; and a step of transferring the silicon layer to the top of the target wafer including the oxide layer by removing the polymer bonding material.

In an SOI wafer, a buried oxide layer between a backside silicon layer as a substrate and a silicon layer as a device layer is formed to remove the influence of the substrate, thereby significantly improving the efficiency and properties of the device layer. Accordingly, the SOI wafer enables high integration, low power consumption, and high speed.
In particular, the semiconductor industry, which aims to develop ultra-large-scale integration devices with low power, low voltage, and high speed, is focusing on the development of SOI wafers having the aforementioned characteristics.
In addition, in the semiconductor industry, efforts are being made to develop three-dimensional laminating technologies such as wire bonding, through silicon via (TSV), and monolithic 3D to realize high integration of semiconductors.
Specifically, among the above-described three-dimensional laminating technologies, TSV technology relates to a process of electrically connecting an upper layer and a lower layer by forming vias through the upper and lower layers. Using TSV technology, power consumption can be reduced by up to 40%, and operation speed can be improved by 50% compared to wire bonding technology wherein wafers are connected using wires. Thus, due to these advantages, TSV technology is attracting attention.
However, TSV technology has technical limitations such as technical difficulties due to aspect ratio and thermal dissipation in thick vias due to the thickness of a substrate. To overcome these limitations, monolithic 3D technology wherein an element-free substrate is laminated on a substrate on which elements are formed, and then elements are formed on the element-free substrate has been proposed.
Specifically, according to a general process for monolithic 3D technology, a substrate into which hydrogen ions have been injected is turned over and laminated on a substrate on which elements have been formed, and then heat treatment is performed at 400° C.
However, in monolithic 3D technology, due to heat treatment at high temperature (400° C.), copper used as wiring lines and already formed elements can be thermally damaged. In addition, since a device layer is inverted such that the top and bottom thereof are reversed, an SOI wafer on which elements have already been formed cannot be applied to a lamination process. Accordingly, use of monolithic 3D technology is limited due to these technical limitations.
In addition, according to another process for monolithic 3D technology, wafer bonding is performed, an amorphous thin film is deposited on the upper portion of a substrate, and then laser annealing is performed for crystallization. However, this method has problems such as difficulty in realizing a large area and occurrence of local crystallization/non-crystallization or polycrystallization by laser annealing.
Therefore, to solve the above-described problems, development of a novel process capable of transferring only a thin film on which a device layer is formed through a low-temperature heat treatment process is required.

Method of forming and transferring thin film using SOI wafer and heat treatment process

IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)