An advertising information display method obtains the terminal location information, which is transmitted from a mobile telephone device, a terminal, retail store location information, which is transmitted from a plurality of retail stores, and advertising information, selects the neighborhood advertising information, which should be transmitted to the mobile telephone device, based on the terminal location information and a plurality of retail store location information, associates the terminal ID with the neighborhood advertising information, transmits the neighborhood advertising information to the mobile telephone device, and displays, on the display of the mobile telephone device, the neighborhood advertising information.

1. Field of the Invention
The present invention relates to an advertising information display method, an advertising information display system, an advertising information display program, and an advertising information transmission program.
2. Discussion of the Background
In recent years, wireless communication terminals for performing wireless communication have been prevalent. Particularly, mobile telephone terminals that are provided with the functions of a telephone device have been significantly prevalent, owing to the convenience of the ability to easily send/receive at all times/places, as well as to their increasingly sophisticated functionality, reasonable prices, and expansion of calling areas. Mobile telephone terminals that are provided with functions to send/receive various types of information, such as email and web browsing, have been entering the mainstream of recent mobile telephone terminals. As used herein, the word terminal means a terminal device.
Recently, a service to correctly measure the location of a mobile telephone terminal (or the user thereof) has been provided, by using a location measurement system such as a GPS (Global Positioning System). This can roughly determine the surrounding circumstances, even in cases where it is an unknown place and it is difficult to determine the surrounding circumstances, for example, by obtaining one's location using the mobile telephone terminal.
A service to provide surrounding region information and store information, etc., is also performed at that time, based on the location information of the mobile telephone terminal. For example, the surrounding circumstances and the store location information can be determined at a travel destination, etc., by using this service, which is very convenient. For example, even if something should become needed suddenly, one's own location information can be obtained and transmitted, and based on that, a store where the object that is needed can be purchased can be promptly found by receiving nearby store information. Japanese Unexamined Patent Application Publication 2001-306567, Japanese Unexamined Patent Application Publication 2003-044552, and Japanese Unexamined Patent Application Publication 2004-310524 disclose examples of a mobile telephone terminal using the location information. The contents of these publications are incorporated herein by reference in their entirety.
However, it has not been possible conventionally to provide surrounding region information if the location information from the mobile telephone terminal cannot be obtained, as the surrounding region information and the store information are provided based on the location information from the mobile telephone terminal. For example, there has been the problem that when the user of the mobile telephone terminal is browsing the web using the mobile telephone terminal, it is necessary to conduct the operation of transmitting the location information repeatedly in order to obtain the advertising information that is based on the location information, whenever the user moves to a different page for browsing (generally, the server providing the information can be different when browsing to a different page, so location information has to be sent again), which is burdensome.
Additionally, in the existing technology, only the surrounding region information within the prescribed range and the store information located at the prescribed range is provided, so there is the problem that a user may not feel like going all the way to the store if the location of the store is far away from the location where the user is located, even if the store advertisement is displayed on the display of the mobile telephone terminal.
Additionally, if time has passed since the location information was obtained from the mobile telephone terminal, in some cases, the user may have been far away from the location corresponding to the location information that was obtained. In this case, because the user has already been away from the location, there is the problem that the advertising information cannot be effectively used, even in cases where the store providing the displayed advertisement is close to the location corresponding to the location information of the mobile telephone terminal.
As described above, even if the nearby store advertising information is provided by using the location information of the mobile telephone terminal, if the user cannot use it effectively, it is not only inconvenient for the user, but also, it is impossible for the store providing the advertisement to obtain advertising effectiveness.
The present invention is developed in consideration of the above circumstances, and it is an illustrative challenge to provide an advertising information display method, etc. which displays, on its display, highly useful advertising information, that is, advertising information from an advertising information transmission source (in general, a store) located at a location close to the location where a user of a mobile telephone terminal is located, by using the location information of the mobile telephone terminal represented by the mobile telephone terminal.
Additionally, other illustrative challenges are to provide an advertising information display method, an advertising information display system, an advertising information display program, and an advertising information transmission program which displays on its display highly useful advertising information by using the location information of the mobile telephone terminal previously obtained and without obtaining additional location information.

Advertising information display method, and advertising information display system


A circuit substrate has three wiring layers, wherein a signal line is formed in a first wiring layer; a ground plane is formed in a second wiring layer; a resonant line is formed in a third wiring layer. A circumferential slit is formed in the ground plane, wherein an island electrode separated from the ground plane is formed inside the slit. The left end of the resonant line is connected to the island electrode through an interlayer-connecting via, while the right end of the resonant line is connected to the ground plane through an interlayer-connecting via. A transmission line (or a microstrip line) is formed using the signal line and the ground plane, and therefore a complex resonator is formed to embrace the transmission line. This achieves band elimination with regard to a signal component of a resonance frequency among signals propagating through the microstrip line. Thus, it is possible to form a noise suppression structure without mounting additional parts on the circuit substrate, and therefore it is possible to effectively eliminate power distribution noise and noise propagating through the signal line with a small and simple configuration.

Conventionally, various types of circuit substrates (e.g. printed circuit boards) have been installed in radio communication devices and electronic devices (e.g. cellular phones, personal computers having wireless communication functions, and handheld information terminals). However, electronic devices in which semiconductor devices and integrated circuits are mounted on circuit substrates suffer from problems in that electromagnetic waves of parts may cause electromagnetic noise to influence other parts, resulting in occurrence of erroneous operations. As noise propagation paths, power distribution systems may propagate noise to influence electronic circuits, or noise may directly influence signal lines.
A noise-generating structure owing to a power distribution system will be described.
FIG. 12 is a perspective view of a circuit substrate 101 mounting a plurality of integrated circuits (LSI circuits) 102 to 105 thereon. As high-speed signal transmission paths, signal lines 106 and 107 are wired between integrated circuits 102 and 103 and between integrated circuits 104 and 105. Additionally, a plurality of bypass capacitors 108 is mounted on the circuit substrate 101. A ground plane GND is formed around these parts on the surface of the circuit substrate 101. A power plane (not shown) is formed as an internal layer inside the circuit substrate 101. A power source 109 is mounted on the circuit substrate 101 and connected to the power plane and the ground plane GND.
Next, the operation of the circuit substrate 101 shown in FIG. 12 will be described.
FIG. 13 is an equivalent circuit of the circuit substrate 101 precluding the bypass capacitor 108. In FIG. 13, due to switching on/off of transistors (not shown) caused by a signal flowing from the integrated circuit 102 to the integrated circuit 103, a charging/discharging current I may flow from the power source 109 to the power terminal or the ground plane GND. At this time, a voltage drop may occur due to parasitic inductance of the power plane or the ground plane GND at a position between the integrated circuits 102 and 104; hence, a source voltage is correspondingly reduced to exert an influence of power noise N on the integrated circuit 104.
To suppress the above voltage drop, it is necessary to mount the bypass capacitor 108 in proximity to the integrated circuits 102 to 105.
FIG. 14 is an equivalent circuit of the circuit substrate 101 mounting the bypass capacitor 108 thereon. Herein, the capacitor 108 is connected between the power terminal and the ground terminal with respect to each of the integrated circuits 102 to 105. In this circuit configuration, for example, when a signal flows from the integrated circuit 102 to the integrated circuit 103, a charging/discharging current I is supplied to the bypass capacitor 108, positioned proximate to the integrated circuit 102, through a path shown by a dashed line. For this reason, a high-frequency current may not flow outside the loop configured of the integrated circuit 102 and the bypass capacitor 108; hence, it is possible to reduce an influence of the charging/discharging current I exerted on the other integrated circuits 103 to 105.
Next, the structure in which noise directly influences signal lines will be described.
FIG. 15 is a perspective view of the circuit substrate 101 mounting a plurality of integrated circuits 102 to 105 thereon. As high-speed signal transmission paths, the signal lines 106 and 107 are wired between the integrated circuits 102 and 103 and between the integrated circuits 104 and 105. The signal line 106 causing an electromagnetic field due to a signal transmitted therethrough may be electromagnetically coupled with the signal line 107 by way of the surrounding space and the circuit substrate 101. For this reason, an electromagnetic influence of the signal line 106 may be superimposed on a signal S1 as noise N, thus causing a degraded signal S2 to be transmitted to the integrated circuit 105.
For this reason, it is necessary to insert a filter into a signal line so as to eliminate noise N coupled with the signal line. In FIG. 15, a plurality of chip inductors 109 is serially inserted into the signal line 107 while a chip capacitor 110 is inserted in parallel, thus forming a T-shape filter. The T-shape filter serves as a low-pass filter (LPF) which is able to eliminate high-frequency noise.
FIGS. 16(a) to (e) show configurations of LPFs using inductors and capacitors. FIG. 16(a) shows an LPF in which an inductor 120 is serially connected to a signal line. FIG. 16(b) shows an LPF in which a capacitor 130 is inserted between a signal line and ground in parallel. FIG. 16(c) shows an L-shaped LPF in which an inductor 121 is serially connected to a signal line while a capacitor 131 is inserted between a signal line and ground in parallel. FIG. 16(d) shows a T-shaped LPF which is configured of inductors 122, 123 and a capacitor 132. FIG. 16(e) shows a π-shaped LPF which is configured of an inductor 124 and capacitors 133, 134. The above LPF is inserted into a dotted block 140 positioned between the integrated circuits 104 and 105 in an equivalent circuit shown in FIG. 17 (i.e. an equivalent circuit for the integrated circuits 104 and 105 shown in FIG. 15), thus eliminating high-frequency noise coupled with a signal line.
Other than the noise suppression structure for mounting inductors and capacitors on the circuit substrate 101, a variety of noise suppression structures has been proposed. For example, Patent Literature 1 discloses a noise suppression structure for multilayered printed circuit boards. In this noise suppression structure, a first conductor transmitting a high-frequency current therethrough is electromagnetically coupled with a noise suppression layer through an insulating layer, while the noise suppression layer is electromagnetically coupled with a second conductor through the insulating layer.
Patent Literature 2 discloses a noise reduction method in a circuit substrate. Herein, high-frequency noise, caused by an integrated circuit (IC), flows from an IC ground terminal to a first via-hole by way of an IC ground pattern formed in a surface wiring layer; it flows from the first via-hole to a first ground pattern; it flows from the first ground pattern to a third ground pattern, which is formed in a base wiring layer, by way of a second via-hole; it flows from the third ground pattern by way of a third via-hole and a second ground pattern, and then it is discharged into the external space.
Patent Literature 3 discloses a memory module for suppressing noise emission. Herein, a multilayered printed circuit board includes a plurality of signal lines or a power pattern as well as a surrounding ground pattern, which is connected through a connecting via. Additionally, a plane antenna configured of a surrounding ground pattern causes an electric field in an opposite direction so as to suppress noise emission from a multilayered printed circuit board.

Circuit substrate having noise suppression structure


The present drive circuit includes: a first N-type transistor connected between a power supply potential line and an output node; a P-type transistor connected between the power supply potential line and the gate of the first N-type transistor; a second N-type transistor forming a diode connected between the gate of the first N-type transistor and a prescribed node; and a differential amplifier for regulating the gate potential of the P-type transistor to match the potential at the prescribed node with the input potential.

FIG. 22 is a circuit diagram illustrating the structure of a conventional drive circuit 130. In FIG. 22, drive circuit 130 includes a differential amplifier 131, a P-type field-effect transistor (hereinafter referred to as a P-type transistor) 132 and a constant-current circuit 133. P-type transistor 132 is connected between a power supply potential VDD line and an output node N132. Constant current circuit 133 allows a constant current to flow from output node N132 to a ground potential GND line. Differential amplifier 131 has a non-inverting input terminal receiving the potential VI at an input node N131, an inverting input terminal receiving the potential VO at output node N132, and an output terminal connected to the gate of P-type transistor 132.
When the output potential VO is higher than the input potential VI, the output potential of differential amplifier 131 is increased, the electric current flowing into P-type transistor 132 is decreased, and the output potential VO is decreased. When the output potential VO is lower than the input potential VI, the output potential of differential amplifier 131 is reduced, the current flowing into P-type transistor 132 is increased, and the output potential VO is increased. Thus, VO=VI.
Unfortunately, since conventional drive circuit 130 has a direct feedback from the output potential VO to differential amplifier 131, the load capacitance may vary when it is large, or oscillation may occur when the input potential VI varies.


Unique temporary MAC addresses are calculated by mobile devices connected to wireless networks, using access point advertising information in combination with the permanent MAC address of the mobile device. The mobile devices use a hash function to construct a bit sequence from which a temporary MAC address can be extracted. The MAC address is unique over the entire region in which the mobile device can operate, without necessity of any coordination or negotiation between various access points of the region.

1. Field of the Invention
The present application relates generally to wireless networking, and more particularly to improving the privacy and security levels of a user's interactions with the network.
2. General Background Discussion
Internet Protocol
IP is a connectionless protocol. The connection between end points during a communication is not continuous. When a user sends or receives data or messages, the data or messages are divided into components known as packets. Every packet is treated as an independent unit of data.
In order to standardize the transmission between points over the Internet or the like networks, an OSI (Open Systems Interconnection) model was established. The OSI model separates the communications processes between two points in a network into seven stacked layers, with each layer adding its own set of functions. Each device handles a message so that there is a downward flow through each layer at a sending end point and an upward flow through the layers at a receiving end point. The programming and/or hardware that provides the seven layers of function is typically a combination of device operating systems, application software, TCP/IP and/or other transport and network protocols, and other software and hardware.
Typically, the top four layers are used when a message passes from or to a user and the bottom three layers are used when a message passes through a device (e.g., an IP host device). An IP host is any device on the network that is capable of transmitting and receiving IP packets, such as a server, a router or a workstation. Messages destined for some other host are not passed up to the upper layers but are forwarded to the other host. In the OSI and other similar models, IP is in Layer-3, the network layer. The layers of the OSI model are listed below.
Layer 7 (i.e., the application layer) is a layer at which, e.g., communication partners are identified, quality of service is identified, user authentication and privacy are considered, constraints on data syntax are identified, etc.
Layer 6 (i.e., the presentation layer) is a layer that, e.g., converts incoming and outgoing data from one presentation format to another, etc.
Layer 5 (i.e., the session layer) is a layer that, e.g., sets up, coordinates, and terminates conversations, exchanges and dialogs between the applications, etc.
Layer-4 (i.e., the transport layer) is a layer that, e.g., manages end-to-end control and error-checking, etc.
Layer-3 (i.e., the network layer) is a layer that, e.g., handles routing and forwarding, etc.
Layer-2 (i.e., the data-link layer) is a layer that, e.g., provides synchronization for the physical level, does bit-stuffing and furnishes transmission protocol knowledge and management, etc. The Institute of Electrical and Electronics Engineers (IEEE) sub-divides the data-link layer into two further sub-layers, the MAC (Media Access Control) layer that controls the data transfer to and from the physical layer and the LLC (Logical Link Control) layer that interfaces with the network layer and interprets commands and performs error recovery.
Layer 1 (i.e., the physical layer) is a layer that, e.g., conveys the bit stream through the network at the physical level. The IEEE sub-divides the physical layer into the PLCP (Physical Layer Convergence Procedure) sub-layer and the PMD (Physical Medium Dependent) sub-layer.
Typically, layers higher than layer-2 (such as, e.g., layers including the network layer or layer-3 in the OSI model and the like) are referred to as the higher-layers.
Wireless Networks
Wireless networks can incorporate a variety of types of mobile devices, such as cellular and wireless telephones, PCs (personal computers), laptop computers, wearable computers, cordless phones, pagers, headsets, printers, PDAs, etc. For example, mobile devices may include digital systems to secure fast wireless transmissions of voice and/or data.
Wireless LANs (WLANs) in which a mobile user can connect to a local area network (LAN) through a wireless connection may be employed for wireless communications. Wireless communications can include communications that propagate via electromagnetic waves, such as light, infrared, radio, microwave. There are a variety of WLAN standards that currently exist, such as, e.g., Bluetooth, IEEE 802.11, and HomeRF.
IEEE 802.11 specifies technologies for wireless LANs and devices. Using 802.11, wireless networking may be accomplished with each single base station supporting several devices. In some examples, devices may come pre-equipped with wireless hardware or a user may install a separate piece of hardware, such as a card, that may include an antenna. By way of example, devices used in 802.11 typically include three notable elements, whether or not the device is an access point (AP), a mobile station (STA), a bridge, a PCMCIA card or another device: a radio transceiver; an antenna; and a MAC (Media Access Control) layer that controls packet flow between points in a network.
Wireless networks can also involve methods and protocols found in Mobile IP (Internet Protocol) systems, in PCS systems, and in other mobile network systems. With respect to Mobile IP, this involves a standard communications protocol created by the Internet Engineering Task Force (IETF). With Mobile IP, mobile device users can move across networks while maintaining their IP Address assigned once. See Request for Comments (RFC) 3344. Mobile IP enhances Internet Protocol (IP) and adds means to forward Internet traffic to mobile devices when connecting outside their home network. Mobile IP assigns each mobile node a home address on its home network and a care-of-address (CoA) that identifies the current location of the device within a network and its subnets. When a device is moved to a different network, it receives a new care-of address. A mobility agent on the home network can associate each home address with its care-of address. The mobile node can send the home agent a binding update each time it changes its care-of address by using a protocol such as Internet Control Message Protocol (ICMP).
In basic IP routing, routing mechanisms typically rely on the assumptions that each network node always has a constant attachment point to the Internet and that each node's IP address identifies the network link it is attached to. In this document, the terminology "node" includes a connection point, which can include a redistribution point or an end point for data transmissions, and which can recognize, process and/or forward communications to other nodes. For example, Internet routers can look at an IP address prefix or the like identifying a device's network. Then, at a network level, routers can look at a set of bits identifying a particular subnet. Then, at a subnet level, routers can look at a set of bits identifying a particular device. With typical mobile IP communications, if a user disconnects a mobile device from the Internet and tries to reconnect it at a new subnet, then the device has to be reconfigured with a new IP address, a proper netmask and a default router. Otherwise, routing protocols would not be able to deliver the packets properly.
MAC Addresses and Privacy
The Media Access Control (MAC) address serves as a unique identifier of a network device. A MAC address is assigned to a network device at the manufacturing stage (typically after having undergone a quality control inspection) by burning or writing it into a permanent location in the network device, such as in ROM. Because of the need to provide a unique MAC address for each network device, MAC address assignment has to be centrally controlled. Consequently the association of MAC addresses with purchasers or users of the network devices is possible, with the result that an observer is able to trace the movements of users based on the MAC address. This also will enable the collection of user history and profile data by an observer. This is possible even when layer 2 security is being used to encrypt the layer 2 packets.
To prevent compromising of user privacy and security, the concept of temporary device identifiers has been proposed in other areas such as 3G networks. In the case of 3G networks, the procedure to use temporary device identifiers is as follows. Every 3G device has a permanent identifier analogous to the permanent MAC address for WLAN devices. When the 3G device desires to connect to a base station, it first sends its permanent identifier "in the clear" (i.e. unencrypted) to the base station. The base station in reply sends to the 3G device (also in the clear) a temporary identifier that the 3G device can then start using. Because the base station allocates the temporary addresses, it can ensure that a single address is not allocated to multiple devices simultaneously.
A problem in 3G networks is the initial usage of the permanent identifier "in the clear," i.e. in an unencrypted manner such that the permanent identifier may be observed by third parties. The 3G system allocates the temporary identifier only after the initial insecure transmission of the permanent identifier. Thus, anybody "listening to" or monitoring communications on the wireless channel continuously would be able to link the temporary address to the permanent address and from there draw inferences about the communication pattern of a device.
In an attempt to avoid this, 3G networks include the concept of a temporary address called TMSI, or Temporary Mobile Subscriber Identity. TMSI has only local significance (e.g., within a VLR (Visitor Location Register) and the area controlled by a VLR, or within an SGSN (Serving General Packet Radio Service Support Node) and the area controlled by an SGSN). As a result, the structure and coding of the TMSI can be defined by agreement between the network operator and manufacturer to meet local needs. This implies the presence of protocols in the 3G network to ensure the uniqueness of the TMSI.
In the case of WLANs, in contrast, it must be ensured that any temporary identifier is unique within a given region that can correspond either to a single Access Point (AP), to multiple APs with the same ESSID (Extended Service Set Identifier), or to multiple APs with different ESSIDs, but which belong to the same organization and are hence accessed via a single router.
The 3G network solution does not provide an efficient solution to the problem in WLANs. With the 3G approach, a mobile device would have to contact the Access Point, which would then allocate a temporary MAC address to the mobile device. This temporary MAC address would have to be unique across the entire region within which the mobile device would be operational. As discussed above, this region could span a single AP, multiple APs with the same ESSID or multiple APs with different ESSIDs.
It would not be difficult to ensure the uniqueness of a temporary MAC address across a region that spans a single AP, as the single AP itself can ensure this during allocation. However, when the mobile device moves from that region to an area covered by a different Access Point, then ensuring that the temporary MAC address is unique would require coordination and negotiation between the involved Access Points (i.e., the old AP and the new AP).
In view of the foregoing, a more efficient solution is needed in the WLAN art, which would be able to allocate a temporary MAC address to a mobile device such that the temporary MAC address would be unique across the region, and which does not require cumbersome and costly coordination and negotiation among Access Points. In addition, the temporary MAC address should provide user anonymity in all cases irrespective of whether the WLAN channel is being monitored or eavesdropped upon.

Dynamic temporary MAC address generation in wireless networks


The present invention provides a thin film field-effect transistor comprising a substrate having thereon at least a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode, wherein the active layer is an oxide semiconductor layer, a resistance layer having an electric conductivity that is lower than an electric conductivity of the active layer is provided between the active layer and at least one of the source electrode or the drain electrode, and an intermediate layer comprising an oxide comprising an element having a stronger bonding force with respect to oxygen than that of the oxide semiconductor in the active layer is provided between the active layer and the resistance layer.

1. Field of the Invention
The present invention relates to a thin film field-effect transistor and a display using the same. Specifically, the invention relates to a thin film field-effect transistor using an amorphous oxide semiconductor in an active layer and a display using the same.
2. Related Art
In recent years, due to progress in liquid crystal and electroluminescence (EL) technologies and the like, flat panel displays (FPD) have been put to practical use. In particular, since high intensity light emission can be obtained by low voltage with an organic electroluminescent device (hereinafter sometimes also referred to as "an organic EL device") using a thin film material that is excited and emits light by applying an electric current, effects such as reduction in device thickness, weight and size, energy saving and the like are expected in broad fields including portable telephone displays, personal digital assistants (PDA), computer displays, information displays of automobiles, TV monitors, and general illumination.
These FPDs are driven by an active matrix circuit of a field-effect thin film transistor (hereinafter sometimes referred to as a thin film transistor or TFT) using an amorphous silicon thin film or a polycrystalline silicon thin film in an active layer provided on a glass substrate.
On the other hand, attempts have also been made to use a light weight and flexible resin substrate in place of a glass substrate in order to achieve further reduction in thickness, reduction in weight, and improvement in breaking resistance of these FPDs.
However, manufacture of the above transistors using silicon thin films requires a thermal process of relatively high temperature, and it is generally difficult to directly form a thin film on a resin substrate that is low in heat resistance.
Accordingly, a TFT using an amorphous oxide capable of film-forming at a low temperature, e.g., In—Ga—Zn—O series amorphous oxides, as a semiconductor thin film has been actively developed (e.g., refer to Japanese Patent Application Laid-Open (JP-A) No. 2006-165529), and IDW/AD '05, pp. 845-846 (Dec. 6, 2005)).
A TFT using an amorphous oxide semiconductor is capable of film-forming at room temperature and can be formed on a film, and therefore it has recently been attracting attention as the material of an active layer of a film (flexible) TFT. In particular, it has been reported by Hosono et al. of the Tokyo Institute of Technology that a TFT using a-IGZO has a field-effect mobility of about 10 cm2/Vs even on a PEN substrate, which is higher than that of an a-Si series TFT on a glass substrate (e.g., refer to NATURE, Vol. 432, pp. 488-492 (Nov. 25, 2004)), and such a TFT has been receiving attention in particular as a film TFT.
However, an amorphous oxide semiconductor layer is liable to cause oxygen defects, and has problems such that the layer fluctuates according to the atmosphere at the time of film forming, semiconductor characteristics are variable due to plasma irradiation and the like at the time of film forming, or performances fluctuate during storage after manufacture. Further, there is a problem such that an amorphous oxide semiconductor layer is liable to be corroded by an acidic etchant for patterning, and a patterning process by photolithography cannot be used, so that highly refined patterning is difficult.
As a method for solving these problems, it is reported that oxygen defects can be suppressed by, for example, providing an amorphous oxide insulating layer as a protective layer, exactly controlling the oxygen concentration in a deposition process, and controlling to include 3.8×1019 pieces/cm3 or more of desorbed gas observed as oxygen by thermal desorption spectroscopy (e.g., refer to JP-A No. 2008-166716). It is also reported that oxygen defects can be suppressed by including a first process of forming a semiconductor layer in an atmosphere having an introduced oxygen partial pressure of 1×10−3 Pa or less, and a second process of performing heat treatment (at 150° C. to 450° C.) in an oxidizing atmosphere after the first process to restore the oxygen defects that have occurred in the semiconductor layer-forming process by the second process (e.g., refer to JP-A No. 2008-53356). However, since both methods require exact control of process conditions in the control of oxygen defects, the processes are complicated, the apparatus are large-sized, and strong heat treatment cannot be applied to a TFT using a film (flexible) substrate. Further, the problems of etchant-resistance in a patterning process and storage stability of a semiconductor film after manufacture remain unresolved.

Thin film field-effect transistor and display using the same


A voltage phase generator that generates a normal voltage phase, a negated normal voltage phase, a boosted voltage phase, and a negated boosted voltage phase. The voltage phase generator includes a first driver circuit that supplies the normal voltage phase to a first output node, and a second driver circuit that supplies the negated normal voltage phase to a second output node. The first and second driver circuits are driven by additional voltage phases that have a boosted voltage. In one preferred embodiment, each of the driver circuits includes a pull-up connected between a supply voltage and one of the output nodes, and a pull-down connected between ground and the one output node. Additionally, the present invention provides a voltage boosting circuit that includes a booster circuit and a voltage phase generator. The booster circuit receives four voltage phases and generates a boosted voltage, and the voltage phase generator generates the four voltage phases and additional voltage phases that have a boosted voltage. The additional voltage phases drive driver circuits that supply the normal voltage phase and the negated normal voltage phase to the booster circuit. In a preferred embodiment, the voltage boosting circuit is integrated in a low supply voltage circuit device.

1. Field of the Invention
The present invention relates to semiconductor memory devices, and more specifically to a voltage phase generator for driving booster circuits of a memory device.
2. Description of Related Art
Integrated circuits, and especially memory circuits, use booster circuits to raise the voltage over the supply voltage for applications such as the driving of memory arrays word lines. Such booster circuits operate by capacitively charging internal nodes with multiple voltage signals that have a determined time sequence. The voltage signals have the same amplitude but a different phase shift, so they are commonly defined as voltage phases. The voltage phases are generated by appropriate voltage phase generators. For such a purpose, a voltage phase generator typically generates four voltage phases: two phases with an amplitude equal to the supply voltage, and two phases with a greater amplitude that is obtained through a voltage boosting circuit or "bootstrap". Usually, such a greater amplitude amounts to nearly twice the amplitude of the supply voltage. The voltage phases with a raised voltage are known as "boosted" voltage phases.
FIG. 1a shows a conventional voltage phase generator 4. A temporary memory circuit or bi-stable latch LTH is controlled by control signals ST1 and ST2 to pace a normal voltage phase FX (i.e., a signal having the amplitude of the supply voltage VDD) and a negated normal voltage phase FN (i.e., in phase opposition to the normal voltage phase FX). The voltage boosting circuits or bootstraps BT produce a boosted voltage phase FBX (i.e., having a greater amplitude than the supply voltage VDD) and a negated boosted voltage phase FBN from the normal voltage phase FX and negated normal voltage phase FN.
The advancement of the normal voltage phase FX and negated normal voltage phase FN towards the voltage boosting circuits BT is paced by a clock signal CK and a negated clock signal CKN, which are the main clocks of the integrated circuit. The four voltage phases described above are shown in FIGS. 2a and 2b. The voltage phase generator 4 drives a booster circuit 1, which is shown in greater detail in FIG. 1b. The booster circuit 1 has two stages S1 and S2 that receive a supply voltage signal at an input IN and supply a boosted voltage signal from an output OUT. The booster circuit 1 may contain several stages that subsequently raise the voltage up to the desired value. The booster circuit 1 is substantially driven by the four voltage phases FX, FN, FBX, and FBN generated by the voltage phase generator 4 of FIG. 1a.
Both of the normal voltage phases FX and FN are generally subject to high current demands during charge transfers from one stage to the next in the booster circuit 1. In contrast, the boosted voltage phases are primarily used to avoid threshold effects of transfer transistors M1 and M2, which are responsible for charge transfer from one stage to the next. Conventionally, high currents are achieved by interposing driving stages 5 having high driving capacity on the normal voltage phases FX and FN that exit the voltage phase generator 4. In other words, the circuit has driving stages 5 capable of supplying high current and formed by adequately-sized inverter circuits (i.e., with a high channel width to length or aspect ratio) that are capable of supplying the high current.
However, such aspect ratios tend to increase the peak current consumed by the inverter circuit during switching. Besides increasing consumption of the inverter circuit, this can also generate unwanted supply noise. Therefore, there is a drawback to using such inverter circuits in the inability to independently increase the aspect ratio of the transistors of the inverters to comply with any driving capacity requirements because the current consumed during switching also increases.

Voltage phase generator with increased driving capacity


The apparatus includes a flexible hose having a first fitting at one end for attachment to a deflated tire and a second fitting at the other end for attachment to an inflated tire from which air is to be transferred to the deflated tire. The second fitting has a spring biased check valve for cutting off flow from the inflated tire to the deflated tire when the pressure entering the second fitting is below a predetermined level.

Devices for inflating a deflated tire from another inflated tire are known. For example, see U.S. Pat. Nos. 1,492,838; 2,237,559 and 2,227,601. None of the devices disclosed in said patents have met with any substantial commercial success. After studying the prior art, I have noted that they suffer from one serious defect. If the deflated tire has a hole in it, the devices in the prior art will facilitate transfer of all of the air from the inflated tire to the deflated tire whereby there will now be two deflated tires. Another defect of the prior art is the lack of any convenient packaging for the device. These and other problems associated with the prior art are solved by the present invention.


This invention relates generally to novel gaskets having continuous multiple seals created by utilizing a core of functionally corrugated material encapsulated by a graphite material such that an interactive relationship exists between the graphite, the functionally corrugated core, and the surfaces to be sealed. Specifically, the present invention relates to fail-safe, ring-type, concentrically corrugated, graphite encapsulated gaskets with continuous, multiple seals creating a multiplicity of parallel, fluid-locked, graphite-densified, barriers for use in the petrochemical industry to seal flange connections. The present invention also relates to fail-safe, concentrically corrugated, graphite encapsulated heat exchanger and internal combustion engine head gaskets with similarly created continuous, multiple seals. A method of manufacture of the gaskets is also disclosed.

This invention relates generally to novel gaskets having continuous multiple seals created by utilizing a core of functionally corrugated material encapsulated by a graphite material such that an interaction occurs among the graphite, the functionally corrugated core, and the surfaces to be sealed. Specifically, the present invention relates to fail-safe, ring-type, concentrically corrugated, graphite encapsulated gaskets with continuous, multiple seals creating a multiplicity of parallel, fluid-locked, graphite-densified, barriers for use in the petrochemical industry to seal flange connections. The present invention also relates to fail-safe, concentrically corrugated, graphite encapsulated heat exchanger and internal combustion engine head gaskets with similarly created continuous, multiple seals.
In the petrochemical industry there exists a need for a versatile flange gasket and heat exchanger gasket having the following characteristics: continuous, fail-safe operation thereby avoiding potential damage to human health, plant equipment and the surrounding environment; fire resistance; resistance to temperature differentials across the diameter of the gasket; chemical resistance; field ruggedness; positive sealing even when the gasket is misaligned; positive sealing when the gasket material differs in thermal expansivity with respect to the surface to be sealed; environmentally safe, non-asbestos construction; operability at high pressures and temperatures; resiliency, springiness, memory, and structural integrity particularly during thermal cycling from high temperatures to low temperatures and vice versa, thermal shock, or other thermal excursions; low torque requirements for maintaining a positive seal at all operational or accidental temperatures and pressures to avoid subjecting the flanges (or other surface) and flange bolts to warpage and/or other damage; inhibited gasket creep or cold flow; crash resistance to enhance the potential for gasket reusability; minimized extrusion of the gasket coating; and reduced installation and maintenance time.
Furthermore, it is likewise desirable to have a cylinder head gasket having similar characteristics as those set forth above in order to improve engine performance.
Until the gaskets of the instant application, these desired gasket characteristics, in combination, had not been achieved. Whereas existing gaskets to date have demonstrated a level of utility and selected ones of the characteristics noted, no gasket until the present invention has been able to achieve the desired combination of gasket characteristics.
Graphite has long been known to possess properties generally desired for high temperature packing materials. In particular, an expanded form of graphite material such as the flexible expanded graphite material sold under the names "Grafoil.RTM." (Union Carbide Corporation, U.S. Pat. No. 3,404,061), "Calgraph.RTM." (Polycarbon, Inc.), "Flexicarb.RTM." (Flexicarb, Inc., a Flexitallic Gaskets, Limited Company), or "Sigraflex.RTM." (Sigri GmbH); an inorganic binder-containing expanded graphite material, such as that described in U.S. Pat. No. 4,234,638; or an intercalated graphite material, such as that described in U.S. Pat. No. 4,799,956, have been employed for use in flange gaskets, heat exchanger gaskets, and automobile engine and exhaust gaskets, and the like.
Bare metal corrugated ring gaskets are known in the art for use as flange gaskets for high temperature applications. Bare metal flat gaskets are also known in the art. However, these bare metal gaskets must be precisely aligned, and the flange and gasket surfaces must be virtually flawless (i.e., highly polished and free of scratches and other abrasions) and the flange bolts must be torqued extremely tightly (approximately 150 ft-lbs on a 3", 150 lb flange) to create a positive seal. Therefore, the flange bolts are typically tightened and over-tightened with a relatively high level of torque to achieve positive sealing. Such over-tightening can warp the flanges, damage both the flanges and the bolts, and create the dangerous potential for seal failure. The bare metal corrugated gaskets have spring-like characteristics which give them high memory and structural integrity, in contrast with a flat metal gasket which has no memory or resiliency. However, the memory capability of a bare metal corrugated gasket is limited in extreme temperature or thermal cycling situations. Under conditions such as thermal cycling, thermal excursions, or thermal shock, these bare metal corrugated gaskets, and the other existing gaskets tend to leak. Furthermore, bare metal is highly vulnerable to corrosion, abrasion, scratching or other attack from hostile materials thereby creating potential leak paths and gasket failure.
Spiral-wound gaskets also exist in the art. These gaskets are composed of two materials, for example, a thin profiled metal strip wound into a spiral with an interleaved strip of a sealing material such as Teflon.RTM., paper, asbestos, or graphite. Spiral-wound gaskets have disadvantages. For example, spiral-wound gaskets have inadequate temperature resiliency when subjected to extreme thermal shocking, excursions or temperature cycling. Spiral-wound gaskets are also abusive to the flanges because they are very difficult to seal and require a relatively high level of torque (as much as 150-160 ft-lbs) be applied to the associated flange bolts. Attempts have been made to enhance the elasticity of a spiral-wound gasket, such as by using the gaskets in tandem, or, as suggested in U.S. Pat. No. 4,796,351, by using annealed high tensile strength, precipitation heat-hardenable alloy steel strip and then heat treating such strip prior to interleaving with the sealing material.
Asbestos gaskets have existed in the art. For example, flat metal, grooved-faced gaskets have been utilized with flanges wherein alternating grooves are filled with asbestos. Asbestos has also been used as a filling material between corrugated sheet metal, metal jackets or spirally wound strips. Also, compressed asbestos sheet material utilizing a rubber binder has been employed in the petrochemical industry as a flange gasket. This asbestos sheet material (such as that sold under the name "Durabla.RTM." by Durabla Manufacturing Co.) is cut into the desired gasket shape and placed between the flange surfaces. Asbestos fiber has desirable material characteristics for gaskets in that it is impervious to most chemicals and acids, it is wear-resistant, and it has high, but limited, temperature capacity (up to approximately 1,000.degree. F. depending upon the stability of the binder material). However, asbestos gaskets only have limited springiness or memory, thereby increasing the likelihood of seal failure during temperature cycling. Furthermore, due to the environmental health dangers associated with asbestos, such a material is no longer desirable in the industry. Kevlar is the most common replacement for asbestos as a gasket material, but it has a temperature limit of only approximately 450.degree. F.
It is also known in the art that graphite can be applied to the edge or center of gaskets to improve the sealing characteristics of the gasket. For example, a strip of expanded graphite tape has been applied around the edge of a flat metal gasket, or has been utilized directly on the flange surface. As described below, the use of a graphite tape is undesirable. Graphite has also been used to encapsulate thin, flat metal gasket reinforcements, such as those described in U.S. Pat. Nos. 4,333,975 and 4,422,894. However, these flat metal-reinforced graphite gaskets have no resiliency or memory, lack a plurality of seals, and do not possess a means of preventing seal loss due to extrusion of the graphite from the metal reinforcement during operation at high temperatures and pressures. Furthermore, the metal is often perforated or tanged thereby creating leak paths.
The use of a strip or strips of narrow graphite tape (i.e., typically less than one inch width) has been employed on corrugated metal pipe flange gaskets typically having larger than an 18" diameter. Application of this tape results in covering only a partial planar surface extending from one corrugation apex to an adjacent corrugation apex on only a portion of the corrugated gasket. Thus, the tape surface generally remains flat and parallel to the flange surface, adhering only to the apex portion of the corrugation, but does not extend into the valley areas between each apex. Furthermore, application of this tape to a circular strip of material creates irregularities or flutes in the tape as the tape is bent or folded to conform to the circular shape. This partial application of tape leaves the metal gasket exposed to corrosion, involves non-uniform, non-unitary, distorted, and overlapping application of the graphite to the gasket face, and does not create a plurality of concentrically spaced, parallel, fluid-locked barrier seals. Furthermore, when the adhesive backing carbonizes at high temperature, and the gasket is placed through a series of temperature cycles, the resulting expansion and contraction of the metal can thereby cause stress and loss of adherence at the graphite/apex points of contact, and/or cause the graphite layer expanse between adjacent corrugation apex points to tear. Furthermore, the expanse of graphite material between adjacent corrugation apex points is vulnerable to puncturing, tearing, and cutting during handling, installation, and use. Thus, the application of this tape creates leak paths, and the potential for extrusion of the graphite material and seal failure.
It has also been suggested that a thin rectilinearly embossed iron sheet could serve as a reinforcement for an inorganically bound graphite material, such as in U.S. Pat. No. 4,234,638. However, this thin rectilinear embossment serves only as a thin reinforcement to a thicker graphite seal, and is not believed to be interactive with the surface to be sealed, nor does it prevent extrusion or channelling of the graphite. This arrangement may experience seal failure at high temperature and pressure.
Graphite has also been used with grooved flat metal pipe flange gaskets, such as described in U.S. Pat. No. 4,121,858. However, the grooves in the gaskets function only to help contain the graphite, and are not believed to give the gasket any memory or resilience.
Furthermore, graphite has been used on heat exchanger head gaskets (for example, as a filler material on a double jacketed heat exchanger gasket as set forth in U.S. Pat. No. 4,118,850 and as a single flat surface coating on a heat exchanger gasket as described in U.S. Pat. No. 4,872,506). However, these heat exchanger head gasket seals also require that a relatively high level of torque (up to approximately 150 ft-lbs) be applied to the head bolts to achieve a positive seal, and these heat exchanger gasket seals have no structural memory or resiliency.
Graphite has also been employed in conjunction with the manufacture of internal combustion engine head gaskets and exhaust manifold gaskets, such as those described in U.S. Pat. Nos. 3,926,539; 4,083,570; 4,423,544; 4,465,287; 4,591,170; 4,705,278; 4,723,783; 4,776,602; 4,810,454; 4,822,062; and 4,911,972. Automotive head gaskets typically require that about 90-100 ft-lbs of torque be applied to the associated bolts to achieve a positive seal and are essentially constructed from a flat, thin (e.g., 7 mil.) metal sheet material which has been perforated and subsequently laminated with a graphite material. The metal has perforations and may further include protrusions (or tangs) extending outwardly on one or both sides of the face of the metal. The graphite material is applied to the surface of this perforated or tanged metal and then the gasket is compressed to close the tangs to affix the graphite in place. Problems exist with these gaskets. For example, the perforations and tangs in the metal substrate may provide leak paths. Additionally, the actual perforated metal is believed to be too thin for welding, thereby, creating size limitations for the gasket. Even if one could weld this very thin (e.g., 7 mil.) material to create a large diameter gasket, the material must then be tanged, which again presents difficulties due to the increased size. Furthermore, these tanged, flat gaskets do not have resilience or memory, thereby reducing their effectiveness in high performance, temperature cycling applications.
Graphite has also been employed in conjunction with the manufacture of valve stem seals or stuffing box seals, such as those described in U.S. Pat. Nos. 4,116,451; 4,160,551; 4,190,257; 4,350,346; 4,394,023; 4,744,572; 4,753,443; and 4,892,320.
As noted above, these existing gasket configurations have limitations and are inadequate to accomplish the desired, combined characteristics for flange, heat exchanger and engine head gaskets as set forth herein.
Therefore, in accordance with the present invention, a fail-safe, multi-sealed, interactive gasket system is provided which overcomes or substantially minimizes these and other disadvantages of the gaskets presently known or used in the art.


A broad bandwidth double balanced mixer with all circuitry contained on a single MMIC die is disclosed using planar magic tee hybrids to greatly reduce component quantity and die area. The hybrids comprise a Lange coupler followed by a capacitor and a quarter-wavelength transmission line on the direct path, in conjunction with a half-wavelength transmission line on the coupled path. The hybrid is essentially a planar realization of a magic tee, producing two equal magnitude outputs that are substantially 180 degrees separated in phase, with the coupled input terminated in 50 ohms. The mixer topology is a ring configured diode quad with two magic tee's at the RF and LO ports and a Wilkinson power divider at the IF port.

It is commonplace in the electronic art to combine a modulated or modulating signal with a local oscillator signal in order to obtain a further modulated signal at another frequency that is more easily amplified, filtered, broadcast, and/or detected. This is done in a mixer.
In a typical demodulation application, a modulated radio frequency (RF) signal is combined in a mixer with a local oscillator (LO) signal to produce an intermediate frequency (IF) signal which may be then further amplified and detected to recover the information modulated onto the RF carrier. Alternatively, this process can be reversed, mixing an LO signal with an IF signal to produce a modulated carrier (RF) signal for further amplification and ultimate transmission as a modulated output signal.
The demodulation mixing process produces sum and differences of the RF and LO frequencies. One or more of the sum and difference frequencies is at the desired IF frequency, according to the following relations:
(1) f.sub.IF =f.sub.LO -f.sub.RF, i.e., down conversion where f.sub.LO >f.sub.RF, PA1 (2) f.sub.IF =f.sub.RF -f.sub.LO, i.e., down conversion where f.sub.LO <f.sub.RF, PA1 (3) f.sub.IF =f.sub.LO +f.sub.RF, i.e., up conversion.
Similar relations apply to modulation of a carrier signal.
Examination of equations (1) and (2) shows that there is not a unique correspondence between f.sub.LO, f.sub.IF, and f.sub.RF. For a given value of f.sub.LO, two different values of f.sub.RF may produce the same value of f.sub.IF. For example, (see FIG. 1) for f.sub.LO =3 GigaHertz, both f.sub.RF1 =2.5 GigaHertz and f.sub.RF2 =3.5 GigaHertz can produce f.sub.IF =0.5 GigaHertz. The RF and IF frequencies are generally not discrete frequencies but narrow frequency bands determined by the modulation thereon. The LO frequency is typically sharply defined, but may be time varying in some cases.
A prior art double balanced mixer apparatus 10 is illustrated in FIG. 2. Mixer apparatus 10 comprises input 12, input 42, output 15, balun transformers 16, 17, and four port mixer element 19 comprising diodes 24, 25, 27, 29, and having input ports 9, 23, 26, 28. RF input signal 14 comprising either or both RF1 and RF2 (FIG. 1) enters at RF port 12. Balun transformer 16 splits incoming signal 14 into two substantially equal amplitude RF signals 18, 20 which have approximately a relative phase displacement of 180.degree.. Signal 18 is sent to port 23 of four port mixer element 19 and signal 20 is sent to port 28 of mixer element 19. Similarly, LO input 11 supplies LO signal 13 to balun transformer 17. Balun transformer 17 splits LO signal 13 into two substantially equal amplitude RF signals 21, 22 having approximately a 180.degree. relative phase displacement. Signal 21 is sent to port 26 of four port mixer element 19 and signal 22 is sent to port 9 of four port mixer element 19.
The nonlinear current versus voltage characteristics of diodes 24, 25, 27, 29 cause signals to be created at frequencies in accordance with equations 1-3, which signals are coupled to IF port 15. Because balun transformers 16, 17 must be able to pass the RF, LO, and IF frequencies, the required bandwidth of the balun transformers is more difficult to realize.
Furthermore, balun transformers such as 16, 17 are generally most useful at frequencies below about one GigaHertz. This limits the frequency range over which prior art mixer apparatus 10 is useful. Alternatively, hybrid devices have been used instead of balun transformers to split signals into two substantially equal amplitude signals having a 180.degree. relative phase difference. These 180.degree. hybrids are typically achieved typically using lumped or semi-lumped networks of capacitors, inductors and resistors. Examples of lumped element hybrids are given in U.S. Pat. Nos. 4,992,761, 5,023,576 and 5,045,821 assigned to the assignee of the present invention. These hybrids have a number of disadvantages at frequencies above several GigaHertz which include excessively small component size and cross-coupling problems making prior art hybrids unsuitable in very high frequency monolithic applications unsuitable.
Alternatively, "magic-tees" have been used as balun transformers to split signals into two substantially equal amplitude signals having a 180.degree. relative phase difference. Magic tees are typically implemented in waveguide form and provide improved isolation between the output ports and between the input ports. The improved isolation is desirable for mixer applications, for example where the RF and LO frequency bands overlap. These waveguide devices are well known in the art.
Mixers are alternatively employed for modulation of an LO signal by an IF signal to produce a modulated carrier, or RF signal. This process is similar to the demodulation process described above, with LO port 11 and IF port 15 accepting input signals and RF port 12 providing an output signal.
Prior art mixers have a number of disadvantages well known in the art. Among these disadvantages are, for example: (1) inadequate port-to-port isolation, (2) limited bandwidth, particularly intermediate frequency bandwidth, (3) relative complexity and (4) difficulty of implementation in compact form suitable for incorporation in monolithic microwave integrated circuits (MMIC's).
MMIC's are typically constructed using Si, GaAs, or other compound or elemental semiconductor integrated circuit (IC) wafer processing technology on and/or in such wafers. It is highly desirable to have broadband mixers which can be made with lumped elements or other structures that are compatible with IC fabrication techniques and geometries. In particular, it is important that they be of comparatively small size so as to not occupy disproportionately large substrate areas compared to the semiconductor diodes, transistors, etc., which mix the signals, or compared to the amplifiers or other signal processing elements that may be included in the MMIC.
Such concerns are important in the frequency range above one GigaHertz and especially important from about 20 to 40 GigaHertz and above where the sizes of distributed circuit elements are unwieldy. In particular, for broad-band applications, the use of hybrids or baluns requires many lumped or distributed elements which, in monolithic applications, require substantial die area. In order to achieve octave and multi-octave bandwidths, for example, several lumped element baluns must be cascaded together resulting in many components which is a major disadvantage since the die area is at a premium. Further, interactive coupling between the components may result from the additional elements in a small area degrading mixer performance.
Where high isolation between ports is additionally required in a mixer application, Magic-tee devices are not readily implementable in monolithic form because of their traditional waveguide construction, for example. Thus there is a need for mixers with the high isolation characteristics of Magic-tee signal inputs that are readily integratable in monolithic form.
Further, there continues to be a need for improved broadband mixers and methods of mixing signals that use fewer components, especially those which are easy to construct and/or which employ elements that are readily integratable in and/or on MMIC's or the like.


The present invention is a beverage dispenser having a low overall vertical height profile. The dispenser includes a water bath tank. The tank volume is enclosed along a top surface thereof by a support plate. A condenser extends horizontally with and adjacent to a top surface of the support plate. A motor is secured to the top plate and includes a shaft with a blade on one end thereof for agitating the water held within the water bath, and includes a condenser cooling fan on the opposite end of the shaft thereof for cooling the condenser. An evaporator is located in the tank horizontally with and closely adjacent to the tank bottom surface. An elongate carbonator extends lengthwise in a substantially horizontal manner in the tank and is located therein between the support plate and the evaporator. In one embodiment, the level of water within the carbonator is regulated by the buoyancy level of the carbonator in the tank.

Beverage dispensers generally include a carbonator for carbonating a source of potable water and often utilize an ice bank refrigeration system for cooling thereof. Such cooling is accomplished through the use of an evaporator having an ice-bank therearound and submerged within a water for heat exchange cooling of the carbonated water and beverage syrups as they are piped through the water bath to a dispensing valve. As is known in the art, an ice bank provides a means for building up a large cooling capacity during periods of relative non-use. In this manner, smaller, less costly, refrigeration components can be used. Further savings in space can be had if the carbonator is held internally of the water tank containing the ice bank.
However, additional reductions in size and cost are continually demanded of beverage dispensing equipment. Accordingly, it would be desirable to have a beverage dispensing machine that is compact and low in cost.

Low height beverage dispensing apparatus


A polymer of sulfonated poly(arylene ether)s (PAEs) and a manufacturing method thereof are provided. A main structure of the PAEs has a first side formed by multi-phenyl glycol monomer and a second side formed by multi-phenyl dihalo monomer with an electron-withdrawing group. The glycol monomer and the dihalo monomer are reacted with each other by a nucleophilic displacement reaction, so as to form the main structure of the PAEs. A film made of the PAEs has a better size stability under a high water uptake.

Current commercial plastic materials such as polyethylene terephthalate (PET), polycarbonate (PC), polyethersulfone (PES), polyimide (PI) and the like each of which has advantages of a low cost and light resistance but also has disadvantages such as poor thermal stability or poor absorbent, thus the applications of such plastic materials in electronic engineering are limited.
With respect to these plastic materials, poly(arylene ether) (PAE) is a high performance engineering plastic having good physical properties, such as: 5% weight loss temperature (Td5%) at 493° C., high glass transition temperature (Tg) at 223° C., high plasticity, high chemical resistance, and good thermal stability, but its water uptake, water-oxygen penetration, the degree of crystallization, the transmittance of visible light area, and other features still require appropriate improvements. Polyethers are generally polymerized by dihalo monomer or dinitro monomer with bisphenoxides to form a polymer. In addition, sulfone or ketone groups have good nucleophilic replacement activity to aromatic halides, so that (poly(aryl ether sulfone)) or (poly(aryl ether ketone)) is common, and heterocyclic and a compound with amide groups can also be used as a polymerization active group to synthesize a PAE with high molar mass.
PAE plastic material is used mostly in insulating film and membrane gas separation, a fluorine-containing polymer is especially useful to provide a low dielectric constant and low water uptake, in which the six-fluorine groups on the side chain of the polymer also help to increase the solubility of the polymer (generally called the fluorine effect), and the huge group (CF3−) with electronegativity will increase the free volume of the polymer, thus improving physical and chemical properties of the polymer, such as gas permeability and electrical insulation, etc.
Further, in order to achieve a higher thermal stability, the design of the molecule adopts a less polar phenyl unit for substitution; it has a high conversion rate and a high molecular weight, and the glass transition temperature is about 250˜280° C. A polymer containing a pyridine and thiophene has a glass transition temperature about 70° C.˜80° C. lower than the average glass transition temperature of a polymer formed by a common monomer. This is due to the different catenation angles. The other influence on the glass transition temperature is the structure of bisphenol. In general, a polymer containing a huge fluorine group has a higher glass transition temperature; a polymer containing a softer group, such as bisphenol-A (BPA), has a relatively low glass transition temperature.
Currently, a traditional synthesis method of PAE comprises a step of proceeding a polymerization reaction of a glycol monomer having steric structure with a phenyl unit with low polarization, such as dihalo or dinitro monomer polyether, wherein the step has advantages for forming cross-linked network of the polymer during the nucleophilic displacement reaction to improve the thermal stability, reduce dielectric constant and water uptake. Therefore, due to the chemical and physical properties of PAE plastics, a PAE with steric structure is a highly functional and mechanical material for plastic film.
The proton exchange membrane belongs to the solid-state electrolyte. Although it is different from the aqueous electrolyte in the voltaic cell, it also has functions similar to the electrolyte solution which can pass positive and negative ions, as it is a conductor. The main function of the proton exchange membrane is to transmit protons, and such polymers in the fuel cell are the most important elements, and directly affect the performance and life of the fuel cell. The requirements of the film are as follows: (a) a good proton transmission capacity (high ion exchange capacity, a uniform microphase separation); (2) able to be isolated from the fuel (gas or methanol) contacts; (3) the catalyst layer in close contact with the film (a good adhesion); and (4) have sufficient mechanical strength and heat tolerance.
The current development of solid-state polymer electrolytes is listed as follows:
1. Perfluorinated Polymer:
PFSA, the proton exchange membrane which is sold commercially (Nafion; DuPont), the series model represents the differences in thickness. Since PFSA has a structure similar to that of the main chain of Teflon, it can provide good mechanical properties, making its life span up to 60,000 hours, and its proton conductivity is up to 0.10 S/cm. The diffusion of methanol in such films still has a serious impact; cells short circuit easily. In addition, the expensive price and high-temperature intolerance are also its shortcomings, and the material still has many possibilities for improvement. Moreover, when the ion exchange capacity (IEC) is high, it means that the concentration of the sulfonic acid (SO3H−) is high, too. The proton channel is increased, so the conductivity is also increased. However, the drawback is that the concentration of the sulfonic acid in the polymer film will directly affect the nature of the film. It is possible to convert the film into a hydrophilic film to cause a hard formation of the film and easy hydrolysis.
2. PFSA Material Modification:
The commercial Nafion is modified to reduce the diffusion of methanol, which can be used as a proton exchange membrane in the methanol fuel cell.
3. Andoxo-Acids Membrane:
A polymer with basic groups (such as ether, alcohol, imine, amide imide group) is added to a strong acid (such as sulfuric acid or phosphoric acid) to form a complex, wherein the acids and bases form hydrogen bonds. This type of proton exchange membrane has a high thermal stability, proton conductivity, mechanical strength, and flexible characteristics, and it is mainly used for high temperature proton exchange membranes. The film theoretically has an excellent nature at a low degree of acidification, but the acidification concentration is increased for high proton conductivity so that the nature is damaged. Thus, the nature of the film and degree of acidification should be balanced.
4. Hydrocarbon Polymer:
The chemical stability and thermal stability of this type of polymer are not as good as Nafion, but the film made of the polymer is cheap. Thus, the disadvantage can be improved upon by the molecular structure and the film can be formed by a normal process.
5. Organic/inorganic hybrid polymer films: Organic/inorganic compounds, for example, amorphous silica modified organic polymer film, are used to achieve the object of high temperature operation, improve the disadvantage of methanol permeability, and promote thermal stability without degrading proton conductivity. The addition of a hydrophilic inorganic compound can increase the capacity of moisture maintenance of the anode. The addition of a conductive inorganic compound can improve proton conductivity. Because an inorganic compound is crystalline, an inorganic film has poor mechanical properties. Therefore, an inorganic compound serves as the modifier. First, an organic polymer with good properties is produced, then the polymer would be modified by an inorganic compound to form an organic/inorganic hybrid polymer film applied to the methanol fuel cell. However, the mixing ratio thereof is still a problem for the purpose of use.
Please refer to FIGS. 1A, 1B, 1C, and 1D, which are schematic diagrams for showing the possible structures of the current sulfonated polymer used in a proton exchange membrane, in which the hatched segments represent the hydrophobic segments, and the unmarked segment represents the hydrophilic segments.
The sulfonated polymer shown in FIG. 1A has a linear long chain structure. Although it can be attached with a plurality of sulfonic acid groups, the sulfonic acid groups are not enough. The sulfonated polymer shown in FIG. 1B has a branched main chain structure. Although it can be attached with a plurality of sulfonic acid groups, the proton conductivity thereof is low at high temperatures. The sulfonated polymer shown in FIG. 1C has a linear long chain structure. Although it has more sulfonic acid groups and higher IEC, the mechanical properties and thermal stability are on the low side. The sulfonated polymer shown in FIG. 1D has a linear main chain structure and has a partially dense distribution of the sulfonic acid groups. Therefore, it has relatively better physical and chemical properties required for a proton exchange membrane.
Therefore, if a polymer of sulfonated poly(arylene ether)s and a manufacturing method thereof can be provided using highly steric monomer as a hydrophilic segment, more groups thereof would connect with more sulfonic acid groups. The thermal stability and the glass transition temperature of the polymer of poly(arylene ether)s would be enhanced and a film of the PAE would have good water uptake, size stability, oxidation stability, chemical resistance, mechanical properties, and process stability as well as low-cost production to thus solve the problems and technical issues in the structure and production of the above conventional sulfonated polymers.

Polymer of sulfonated poly(arlene ether)s and manufacturing method thereof


A dual-mode dual-data rate (DDR) synchronous dynamic random access memory (SDRAM)/synchronous graphic random access memory (SGRAM). An exemplary DDR SDRAM/SGRAM comprises a single memory device, which itself comprises a memory array including a quad-bank DRAM and a logic circuitry. The logic circuitry is coupled to the memory array and is configurable to operate the single memory device in a first mode and a second mode. The first mode may include a delayed lock loop (DLL) capability while the second mode may include a non-DLL capability.

Graphics-intensive applications for computers such as personal computers (PC's) are becoming increasingly more popular. Such applications include high-end computer-aided drafting (CAD) applications, games, real-time video applications, as well as other applications. As these applications become more complex, they require the computers on which they are run to render and execute graphics much more quickly. Furthermore, as the typical resolution of computer screens have increased from 640×480 pixels (horizontal×vertical) to 800×600, 1024×768 and beyond, and increased color information per pixel from two bits to 24 bits to 32 bits and beyond, the processing demand placed on the computers for fast graphics execution has also grown.
The typical computer relies on a graphics card (also known as a video card, graphic accelerator card, or a display adapter, among other terms) to assist it in the display of graphics on a display device. A graphics card generally includes a specialized processor or processors that are tailor-made for graphics rendering, as well as an amount of memory, ranging from one, two, four, eight, sixteen megabytes and up, so that a complete screen of graphics information, known as a frame, can be stored by the graphics card. Thus, this memory is generally known as a frame buffer of the graphics card. Graphics "cards" may also be integrated within a single chip on a motherboard of a computer. A graphics card, and potentially other components, make up the graphics subsystem of a computer.
Initially, the memory of a graphics card was standard-issue dynamic random-access memory (DRAM), of a sort also used by computer processors to hold more general information. Thus, as improvements in memory to increase their speed became available, such as the introduction of synchronous dynamic random-access memory (SDRAM), they usually have been utilized within graphics cards, too. Ultimately, however, the specialized needs of graphics rendering required their own type of memory, such as synchronous graphics random-access memory (SGRAM), which is analogous to SDRAM, but includes enhanced graphics features for use with graphics cards. The need for faster memory within graphics cards has not, however, abated.
Thus, graphics cards manufacturers have looked to new technologies, such as Rambus DRAM's (also known as Direct RDRAM's), available from Rambus, Inc. of Mountain View, Calif., to increase graphics subsystem performance. Rambus DRAM use within graphics cards, however, has been limited because it is based on a closed standard governed by Rambus, Inc., such that use of Rambus DRAM requires the payment of royalties to Rambus, Inc. Therefore, manufacturers have looked to other technologies that are based on open standards.
One such type of memory is the Double Data Rate (DDR) DRAM. The DDR DRAM achieves increased performance by providing for two data accesses within a single clock cycle—hence its name—by enabling the memory to read data on both the rising and falling edges of each clock cycle. The concept of DDR memories has been extended to SDRAM's and SGRAM's in particular, resulting in DDR SDRAM and DDR SGRAM. Such memory has witnessed increased interest on the part of graphics card designers as a manner by which increased graphics performance can be realized.
However, perhaps because DDR SDRAM and DDR SGRAM are based on an open standard, at least two different types of DDR SDRAM and SGRAM have been proposed. A first standard for DDR SDRAM/SGRAM has been championed by Intel Corp., of Santa Clara, Calif., as implemented by manufacturers such as Samsung Electronics Co., of Suwon, South Korea, in its KM432D5131 DDR SGRAM, a data sheet for which, Revision 0.6 (April 1998), is hereby incorporated by reference. A second standard has been agreed to by the members of the Joint Electronic Device Engineering Council (JEDEC), which is an industry organization that attempts to set common standards, among other things. An example of a DDR SDRAM/SGRAM according to this latter standard is the IBM DDR SGRAM IBM0616328RL6A, manufactured by International Business Machines (IBM), Inc., of White Plains, N.Y., and a data sheet for which, #06L6370-02 (December 1997), is also hereby incorporated by reference.
Although both of these standards achieve increased performance over non-DDR SDRAM/SGRAM's, there are functional and timing parameter differences between the two that prevent the use of one in direct lieu of another. For example, CAS latencies, preambles, postambles, enablement/disablement of DLL, as well as set-up and hold-time parameters differ between chips of the differing types. This makes it difficult for memory manufacturers to succeed in the graphics memory marketplace, since they realistically have to produce chips according to both standards if they wish to sell DDR SDRAM/SGRAM's to all potential customers.
An alternative is to design a DDR SDRAM/SGRAM that in actuality has both types of devices on a single chip, such that either device is selectable by the appropriate modification of metal, fuses or bond options on the die. This is disadvantageous, however. Although such a memory may be marketed as being compatible with either standard, in actuality the manufacturer is putting two separate devices on a single chip, which means the manufacturer is ultimately making a chip that is more complex and thus probably more expensive than DDR SDRAM/SGRAM's that are compatible with only one standard or another. Thus, such a "dual-device" DDR SDRAM/SGRAM is realistically a cost-prohibitive solution.
There is a need, therefore, for a DDR SDRAM/SGRAM that operates in accordance with both of any two standards for such memories. Such a solution desirably does not require the use of two separate DDR SDRAM/SGRAM devices on a single chip, either of which is selectable, but rather achieves dual-standard compatibility in a different manner. That is, there is a need for a DDR SDRAM/SGRAM that is compatible with more than one standard and which can be produced in a cost-effective way.


A H.sub.2 -containing feed gas is introduced into a reaction area including a liquid medium containing a catalyst, to thereby preform a catalytic reaction to produce a gaseous reaction product and to generate heat of reaction which is transferred to the liquid medium, such that the catalytic reaction occurs at an operational temperature and at an operational pressure. The liquid medium is a reactor liquid which is stable during the catalytic reaction and which boils at the operational temperature and operational pressure. The boiling reactor liquid thereby maintains the catalyst at a constant temperature. Boiling of the reactor liquid produces an evaporation of the reactor liquid, and the resultant vapor is condensed in a condensation area located above the reaction area. The thus formed condensate is retuthe catalyst at a constant temperature. Boiling of the reactor liquid produces an evaporation of the reactor liquid, and the resultant vapor is condensed in a condensation area located above the reaction area. The thus formed condensate is returned to the reaction area.

The present invention relates to an apparatus for the catalytic reaction and transformation of a H.sub.2 -containing feed gas, wherein a catalyst is contained in a liquid medium within a reaction area, and wherein the feed gas is introduced into the liquid medium and the catalyst, to thereby perform a catalytic reaction to produce a gaseous reaction product and to generate heat of reaction.
Systems of this general type are known. For example, the article of Kolbel and Ackermann, "Large Scale Industrial Experiments Relating to Fischer-Tropsch Synthesis in a Liquid Medium", Chemie-Ingenieur-Technik, 1956 (6), page 381 and following pages, particularly page 383, left column, suggests a liquid phase synthesis by means of a suspended iron catalyst for the Fischer-Tropsch method of synthesis by means of a displaced catalyst which is suspended in the upward flow of a liquid medium. The liquid medium employed in this known process is an oil which absorbs the heat of reaction in the reaction area and is then cooled by being pumped out of the reactor through a recycling system. According to this article, difficulties result due to abrasion or decomposition of the grains of the catalyst and due to depositing of the catalyst in the recycling system.
Such disadvantages should be eliminated with the known bubble column, wherein a stationary liquid column is employed in the reaction area. However, the use of a bubble column has the disadvantage of difficulty in achieving removal of heat, similar to known gas-solid systems. Such disadvantage may readily lead to an overheating of the reaction area and to destruction of the catalyst. In the case of fluidized bed arrangements, the further disadvantages of catalyst abrasion and dust occur.
From the article of Langensiepen and Hammer, "Concerning the Dynamic Properties of a Bubble Column Reactor Comprising a Suspended Catalyst for the Methanation of Carbon Monoxide", Chemie-Ingenieur-Technik, 1974 (24), page 1051, it is known to use a bubble column reactor for the methanation of carbon monoxide. However, in a manner similar to that of Fischer-Tropsche synthesis, difficulties occur in obtaining good heat transfer. That is, heat transfer is very low in the fluidized or fluid bed, and thus extraordinarily large heat exchange surfaces are required for sufficient cooling.
Consequently, all known prior art systems are inherently limited with regard to production capacity, either due to an inherent limitation in the maximum amount of heat which can be removed, or due to abrasion of the catalyst and its removal. Prior art systems which attempt to accommodate for these disadvantages inherently increase the cost of production.

Apparatus for the catalytic reaction of H.sub.2 -containing feed gas


A railroad hopper car body includes a set of hopper and hopper discharges. Egress of lading from the discharges is governed by movable doors that swing between a closed position and an open position. The motion is driven by a mechanical transmission that is itself driven by an actuator. Each pair of doors is driven by a single actuator. The actuator is mounted to act through the center sill. A portion, or substantially all, of the actuator may be mounted in a predominantly squat, vertical orientation within the center sill. In alternate embodiments, the transmission output may be bifurcated. The center sill bottom flange may be narrower adjacent to the doors. The mechanism may have a secondary lock. The mechanism may have an auxiliary manual release.

There are many kinds of railroad cars for carrying particulate material, be it sand or gravel aggregate, plastic pellets, grains, ores, potash, coal or other granular materials. These materials are not liquid, yet may in some ways tend to flow in a somewhat liquid-like manner. Many of those cars have an upper opening, or accessway of some kind, by which the particulate is loaded, and a lower opening, accessway, or door, by which the particulate material exits the car under the influence of gravity. Clearly, while the inlet opening need not necessarily have a movable door (but may include a cover to discourage contamination of the lading or exposure of the lading to the wind, rain or snow), the outlet opening requires a governor of some kind that is movable between a closed position for retaining the lading while the lading is being transported, and an open position for releasing the lading at the destination. The terminology "flow through" or "flow through railroad car" or "center flow" car, or the like, may sometimes be used for cars of this nature where lading is introduced at the top, and flows out at the bottom.
Consider, for example, a hopper car for transporting sand or gravel aggregate. It may have a converging hopper discharge section that has the shape, generally speaking, of an inverted four sided, truncated pyramid. At the truncated bottom end, there may be a stationary plate and a moving plate, or door. When the moving plate and the stationary plate are brought together, the door is closed. The car is filled with lading, and is hauled to its destination. At the destination, the door or gate is opened, and the lading is allowed to escape from the hopper. The doors are driven by actuators connected to the doors by mechanical transmission elements.