Spindles, balusters, and railing posts are injection molded to encase reinforcing rods or tubes. Preferably the rods or tubes are magnetically responsive, which permits them to be held in place by magnets during the molding process.

While balusters or spindles for deck and porch railings continue to be made of wood, the use of synthetic resins has many advantages, such as a reduction in or elimination of the necessity for painting or otherwise coating, good weatherability, excellent wear, good appearance, versatility of design, and inexpensive production. Wood may crack over time, frequently is chemically treated to prevent microbial and insect infestation, and can require frequent protective coatings. Combinations of angular and round surfaces are rare because the round parts must be individually turned on a lathe. In addition, wood naturally comes with inevitable imperfections such as knots and grain separation.
One of the negative aspects of using synthetic resins has been the more or less arbitrary prohibition and/or regulation of synthetic resin spindles on the theory that small children can distort them, sometimes pinching themselves between the spindles or otherwise injuring themselves. Although synthetic resins have wide ranges of tensile strength, impact resistance, stiffness and other relevant properties, regulatory agencies and sometimes the customers themselves may simply ignore the differences and assume that "plastic" is inferior. Accordingly there is a need for a synthetic resin spindle which is manifestly rigid.
Ease and particularly versatility of assembly are other attributes sought for spindles for railings. It would be desirable, for example, to be able to make railings of some variation in height using a spindle of a standard design.
It is known to encase a reinforcing member within a synthetic resin body. See, for example, Lemelson U.S. Pat. No. 4,043,721.
In U.S. Pat. No. 3,200,554, Goodman et al encase a metal tube in wood (saying plastic may be used also) to make a lamp pole. The encasement is accomplished by fabrication, however, not in a mold as in the present invention.
Bajorek et al, in U.S. Pat. Nos. 4,035,978 and 4,038,802, also fabricate covers for bars, spindles, or balusters. The covers have two sections having mating surfaces, in one case longitudinal and in the other sectional. Such a construction does not intimately embed the reinforcing rod or tube as does applicant's.
In Design Pat. No. 315,415, Anthony illustrates a "decorative vertical support" having a profile with a round central portion and two square end portions. This may be of interest to the reader because applicant's preferred end portions are also substantially square, but they are separate sleeves designed to pass over the ends of the reinforced portion.


A system includes an input multi-level channelizer, an output multi-level channelizer, and more than one amplifiers connected between the input and output channelizers. The input and output channelizers cover an operating frequency band. Each level of the input multi-level channelizer comprises a plurality of input channels, which may be bandpass filters, and may be grouped into input sub-channelizers. Each successive level of the input multi-level channelizer is configured to divide the incoming signals into smaller frequency bands. Each level of the output multi-level channelizer comprises a plurality of output channels, which may be bandpass filters, and may be grouped into output sub-channelizers. Each successive level of the output multi-level channelizer is configured to combine the incoming signals into larger frequency bands. The signal output from the output multi-level channelizer represents a filtered version of the signal input into the input multi-level channelizer.

The COMB Limiter Combiner (CLIC) described in U.S. Pat. No. 6,549,560 to Maiuzzo et al. prevents strong interfering signals in nearby frequencies from overloading the amplifier and limiter stages in the front end of communications receivers. CLIC operates by, in part, restricting inter-modulation products to the passband of a single bandpass filter. CLIC design has generally been limited to between 10 and 16 channels due to the effect of each CLIC channel on the performance of the other CLIC channels, as well as the increased difficulty in electrically aligning an increased number of CLIC channels.
For many applications, it is desirable to have a filtering device that can achieve the same performance as CLIC, while operating over a broad frequency range. As an example, consider the application of CLIC to the military UHF band of 225 MHz to 400 MHz. The Electromagnetic Compatibility (EMC) goal is specified in terms of the acceptable adjacent signal separation, which is the specified separation required between a receive signal and all co-site transmit signals. For the military UHF bands, the adjacent signal separation is usually 1 MHz to 5 MHz. Therefore, 35 CLIC sub-bands would be required for an adjacent signal separation of 5 MHz, while an adjacent signal separation of 1 MHz would require 175 CLIC sub-bands. Such amounts of sub-bands are not feasible given the limitations in CLIC design as discussed above.
A need exists for a filtering device that can achieve the same performance as CLIC, i.e. minimizing intermodulation and mitigating potential interfering signals, but includes significantly more channels to allow operation over a broad frequency range.

Input/output multi-level channelizer amplifier

The United States of America as represented by the Secretary of the Navy


Methods and apparatuses for searching network data for one or more predetermined strings are disclosed. In one embodiment, the string search is a multi-stage search where the stages of the search are performed by different hardware components. In one embodiment in a first search stage, a first processor performs a comparison of blocks of incoming data to determine whether the blocks potentially represent the beginning of one of the predetermined strings. If a potential predetermined string is identified, a second processor performs a further search to determine whether the string matches one of the predetermined strings. Because the first processor searches only for the beginning of the predetermined strings, the first stage comparison can be performed quickly, which improves network performance as compared to more detailed searching. The second stage is performed by second processor, which allows the first processor to search for potential matching strings. Because many strings do not match the one or more predetermined strings, the more detailed search performed by the second processor is performed selectively, which increases network performance as compared to more detailed searches on all network data.

The invention relates to identification of predefined patterns in digital data. More particularly, the invention relates to a scheme for identifying a string of data using a multi-stage searching technique.
In recent years computer networks have changed many aspects of life. For example, in a few short years, the Internet has changed the manner in which information is sent and received, the way goods and services are bought and sold, and the way that financial matters are handled. Standard applications such as web browsers and protocols such as Transmission Control Protocol/Internet Protocol (TCP/IP) have become integral to the success of networks.
In order to provide more information and services to more people and to more places, networks have become easier to use and more reliable. However, making the network operate smoothly requires a high degree of interoperability, scalability and platform independence. One aspect of networking is policy enforcement. Policy enforcement provides a way to give some types of traffic, such as real-time video, priority over other, less important traffic, such as electronic mail. Policy enforcement can also provide intrusion detection.
Policy enforcement has been provided with general purpose computers, fixed function appliances, and/or switches and routers. General purpose computers that provide policy enforcement typically include two or more network interface cards (NICs) that provide multiple connections to the network. Policy enforcement is provided by the processor of the general purpose computer. However, general purpose computers are not developed to perform high-speed operations on network packets. Because of this policy enforcement with general purpose computers is a bottleneck to network performance.
In an attempt to overcome the performance limitations of using general purpose computers for policy enforcement, fixed-function devices specifically designed to support policy enforcement have been developed. Typically, these fixed-function appliances have a processor and/or customized hardware and two or more NICs. While fixed-function appliances can be fast enough for some network operations, scalability is restricted.
Switches and routers have been used to provide policy enforcement. However, switches and routers typically do not have sufficient processing power to provide policy enforcement in addition to switching and routing functionality. The processors of the switches and routers must be used for both policy enforcement and for switching and/or routing functionality, which decreases network performance. Alternatively, switches and routers can be designed with more powerful processors, which increases the cost of the switches and routers.
A method and apparatus for searching for a string of data matching a predetermined string of data is described. A first stage search is performed on the data. The first stage search identifies one or more potential strings of interest having a pattern matching a portion of the predetermined string. A second stage search is performed on the data corresponding to the one or more potential strings of interest to determine whether a match exists. In one embodiment the first stage search is performed by a first processor and the second stage search is performed by a second processor. In another embodiment, the first stage search and the second stage search are performed by a single processor if performed in sequence.

String search scheme in a distributed architecture


Methods for the quantification of hydrophilic properties of a porous material, as well as determining a depth of damage of a porous material are disclosed. An example method includes performing a first ellipsometric measurement on the porous material using a first adsorptive having a first wetting angle. The example method further includes performing a second ellipsometric measurement on the porous material using a second adsorptive having a second wetting angle, wherein the first and second wetting angles are different towards the porous material. The hydrophilic properties of the porous material are determined based, at least in part, on the first and second ellipsometric measurements.

One critical issue in integration of porous materials, such as e.g. low-k materials, during semiconductor processing is the degradation of e.g. their dielectric properties during plasma etching and/or resist stripping. The plasmas used during such processes typically comprise oxygen-containing species. The main reason for degradation of the dielectric properties of porous materials is the removal of carbon containing hydrophobic groups by using these oxygen containing plasmas.
Carbon depletion occurs when, for example, a Si—CH3 bond is broken and the carbon is replaced by a silicon-dangling bond. This carbon depletion results in the formation of silanol (Si—OH) through a variety of intermediate reactions. This leads to an increase in k-value for the damaged portion of the porous material and converts the inherently hydrophobic low-k material into a hydrophilic material. Subsequent adsorption of moisture, e.g. water, or other polar molecules having high polarizability, mediated by hydrogen bonding, can significantly increase the effective k-value of the material, e.g. to a k-value>>80. Degree and depth of plasma damage depends on the pore size and the pore connectivity of the porous material and therefore, ultra low-k materials with e.g. k-value lower than 2.6, which normally have a relatively large pore size, suffer much more from this plasma damage than micro-porous materials with a k-value of higher than 2.6. The extent of the damaged portion of the dielectric material at sidewalls of etched material is also expected to increase as the porosity of the porous material increases, and the extent of such damage on overall electrical performance gains importance as the spacing between interconnect lines shrinks. Therefore, sidewall dielectric damage has a major impact on the performance of advanced interconnects, and a reliable analysis method for evaluating the extent of such damage is desirable.
In general, the depth and profile of carbon depletion is evaluated using complicated analytical techniques like, for example, Time-of-Flight Secondary Ion Mass Spectroscopy (TOF-SIMS), X-ray photoelectron spectroscopy (XPS), Energy Filter transmission Electron microscopy (EFTEM) etc., or by using the so called HF-dip test. TOF-SIMS is a type of SIMS in which an ultra-low current incident ion beam is used and by which information regarding chemical composition of the outermost surface of solids can be obtained. EFTEM is a technique that detects the variation of the atomic concentrations of elements such as C, O and Si through the cross-section of a feature.
Using TOF-SIMS, it is assumed that only the carbon concentration is responsible for the hydrophobic properties that define the dielectric constant of the film, independent of how they are bonded and integrated in the porous material structure. TOF-SIMS data for determining the depth of low-k damage are related to the carbon concentration in the surface region of the low-k porous material and these data are compared with the carbon concentration in the bulk of the low-k material. The carbon depletion in the surface region after etching and stripping is then an indication of the low-k damage. However when such low-k materials, e.g. films, are subjected to HF dip test there is no clear correlation between carbon depletion and plasma damage.
A HF dip test is based on the fact that damaged low-k dielectric material shows a higher etch rate than undamaged material. Normally this test more directly reflects the hydrophilic properties of the porous material but an autocatalytic mechanism of interaction of HF with SiO2 makes this test not reliable because the etch rate and the calculated depth of damage depends on the HF concentration.
Carbon depletion cannot always directly be correlated with plasma damage. For example, when a highly polymerizing chemistry is used (e.g. CxFyHz plasma), the carbon depletion is compensated by the deposition of CFx polymers resulting in equal or increased carbon concentrations in the low-k porous material surface. According to traditional interpretation of TOF-SIMS results, this surface should be the most hydrophobic (no "damage"). However, HF dip tests show a larger etch rate of this sample in comparison with an undamaged low-k reference material, which in general is pristine. Therefore, the fluorocarbon polymer that is formed during the etching process and that fills the pores of the porous material is not able to provide the same hydrophobic properties as the original hydrophobization agents. These facts show the importance for the development of special measurement procedures that give more direct analysis on the degree of internal hydrophilization related to plasma damage.
In addition, all the existing methods described above and other methods available in the prior art are destructive and/or very complicated and do not give information directly correlated with loss of hydrophobicity, which has the largest effect on the dielectric properties of the porous material. Thus, existing methods to determine low-k damage have serious drawbacks and shortcomings. A method that allows for determining the depth of damage and exact hydrophobicity of low-k material is desirable. Additionally, there is a need for a simple non-destructive method for use in developing and screening different low-k materials, especially for ultra low-k materials that will be used for future technologies.
The foregoing examples of the related art and limitations related therewith are intended to be illustrative and not exclusive. Other limitations of the related art will become apparent to those of skill in the art upon a reading of the specification and a study of the drawings.

Method for the quantification of hydrophilic properties of porous materials

Interuniversitair Microelektronica Centrum (IMEC vzw)


An apparatus provides a correction value for an oscillator. At least one parameter sensor measures a system parameter influencing the oscillator. A lookup table determines a cycle adjustment value based on the system parameter. A processor joined to the oscillator implements the cycle adjustment value to correct for oscillator variation. Cycle adjustment values can be computed in both whole cycles and partial cycles through accumulated error thresholding. The parameter sensor can be a temperature sensor, a voltage sensor or both kinds of sensors. The lookup table and processor can have additional terms to account for hysteresis in the oscillator.

(1) Field of the Invention
The present invention generally relates to programmable controllers and more specifically to correcting delay time errors caused by temperature and voltage changes.
(2) Description of the Prior Art
Electronic systems derive their functionality from programmable controllers such as microprocessors, FPGAs, CPLDs, or ASICs. The heart of any programmable system is the clock or oscillator because it tells the system when to execute its instructions.
Most oscillators exhibit non-uniform frequencies throughout their temperature range. This means that the speed in which an electronic system operates will vary depending on its temperature. This is an undesirable condition which causes synchronization and/or other timing errors. FIG. 1A shows the frequency excursion from the normal operating frequency versus temperature. Curve 10 shows the excursion when the temperature is declining, and curve 12 shows the excursion when the temperature is increasing. As evident from FIG. 1A, these oscillators not only exhibit frequency variability with respect to temperature, they also display hysteresis when subjected to ascending or descending temperatures.
These curves were obtained utilizing a temperature controlled oscillator (TCXO) such as the 566Y4995 oscillator manufactured by Vectron International whose nominal operating frequency is stated to be 27 MHz plus or minus 5 parts per million (ppm). The temperature data was gathered from a Dallas Semiconductor temperature chip mounted next to the oscillator on a printed circuit board (PCB). FIG. 1B shows the temperature versus time profile giving these results.
It is also well known that oscillators exhibit timing variance based on input voltage. Similar graphs could be obtained by subjecting an oscillator to a time varying input voltage.
Therefore, any electronic system using this oscillator would exhibit timing variance depending on its environment. This variance is compounded as timing offsets tend to be cumulative. For example, if a system designed to be synchronized to a referenced one second time period is off by one millisecond per second, after ten seconds, the synchronization will be off by ten milliseconds, and after one minute the synchronization will be off by 60 milliseconds.
Processors and programmable controllers use loops and/or timers to create delays in electronic systems. A loop is simply a large number of instruction cycles that the controller must execute before moving on to its next portion of code. A timer can also be used to achieve this by counting to certain preset number before moving on. If the clock or oscillator is not operating at the correct frequency, these delays will either be too long or too short.
To solve this problem, instruction cycles can be added or subtracted from the delays depending on the temperature of the oscillator. For example, if the clock frequency is 10 hertz too slow at some temperature, a calculated number of instruction cycles can be subtracted from the current code so as to speed up the execution time by 10 hertz. The net frequency difference would therefore be 0 hertz resulting in no error. The number of instruction cycles needed to remove the frequency error can be calculated from the following:Adjustment—Val(temp)=[fCLK(temp)×delay(s)]−[Number of cycles in delay]  (1)                where fCLK is the frequency of the oscillator,        temp is the temperature of the oscillator,        delay is the desired time delay of the software loop, and        Number of cycles in delay is the calculated number of instruction cycles needed to create the delay (assuming perfect clock frequency).
The prior art acknowledges that oscillators and clock chips have problems with maintaining a stable frequency under changing temperature conditions. Richards et al., U.S. Pat. No. 4,684,897 teach a frequency correction apparatus having a delay line fed by an input signal, the frequency of such signal being corrected a predetermined amount, Δf. The delay line has a plurality of output taps regularly disposed along the line. The output taps produce a plurality of successively time-delayed signals each one having the frequency of the input signal. A switching network is included for successively coupling each one of the plurality of time-delayed signals to an output terminal of a predetermined coupling change rate related to Δf, to produce, at such output terminal, an output signal having a frequency shifted from the frequency of the input signal the predetermined amount required for the desired frequency correction. When the taps are successively coupled to the output terminal in a direction along the delay line away from the input to such line, the frequency of the output signal is equal to the frequency of the input shift shifted lower in frequency the amount Δf. On the other hand, when the taps are successively coupled in a direction towards the line input, the frequency of the output signal is shifted higher in frequency the amount Δf.
Moller et al., U.S. Pat. No. 5,644,271 teach a temperature compensation system includes a first oscillator to generate a number of pulses which vary from a desired frequency as a function of temperature of the first oscillator. The system also includes a second oscillator to generate digital pulses at a corrective frequency which is greater than the desired frequency. A sensor provides a temperature signal for the first oscillator. A digital memory has a digital error table addressable by a signal corresponding to the temperature signal to provide a number of pulse errors corresponding to temperature error for each of the number of pulses. Each pulse error is a function of the corrective frequency and a temperature versus frequency characteristic of the first oscillator. An accumulator receives each pulse error to generate a cumulative error corresponding to one of the number of pulses. A variable delay device counts a quantity of corrective pulses from second oscillator to provide a delayed output pulse in accordance with the desired frequency. The quantity of corrective pulses is a function of the cumulative error signal received from the accumulator. The converter, memory, accumulator and delay device may be part of a microcontroller.
While these patents teach corrective actions for oscillator excursion caused by temperature variations, they do not teach correcting for hysteresis or for correcting delay times by adding instruction cycles.


The present invention provides a method for pushing an associated user in a Social Networking Service (SNS) network and an SNS network system. The method comprises: respectively collecting a plurality of pieces of user data created by each SNS user in an SNS network; extracting, from the plurality of pieces of user data created by each SNS user, at least one label and attribute belonging to the SNS user; generating a user list consisting of a plurality of SNS users having the same label and the same attribute; and pushing, in a bidirectional manner, user lists having the same label and associated attributes. In the present invention, based on user data created by a user, the SNS system automatically searches for associated users thereof, thereby implementing mutual pushing of the associated users, so that communication between SNS users becomes more efficient and convenient.

SNS, which is a piece of technical application architecture under the Web 2.0 system, overcomes or solves specific application problems during social relation establishment processes through direct establishment of social friend relations and sharing of human resources among friends. By using SNS, personal data processing, personal social relation management and reliable commercial information sharing can be realized, personal information and knowledge can be shared with trustworthy people safely, personal social networks can be expanded by utilizing trust relationships, and more valuable communication and collaboration can be achieved.
In an SNS network, users can establish data, e.g. blogs, pictures and microblogs etc. Taking blogs for example, when a user establishes and completes a blog, many users who are interested in the blog will be attracted to read and appreciate the blog initiatively. As shown in FIG. 1, in the page of blog X created by user A, an SNS network system will automatically generate a guest list consisting of all users who clicked and read the blog. The owner of the blog may click the guest list to access guests in the guest list, e.g. guest 1, guest 2, guest 3 and guest 4 to communicate.
It can be learned from the prior art above that only those who actually click and view user data created by a certain SNS user will appear in the guest list. In other words, for a certain SNS user who creates user data, the created user data can be only accessed by other users passively, but cannot be pushed to other users automatically. Other SNS users who are interested in the created user data will not appear in the guest list. Thus the SNS user who creates the user data fails to establish connections with other SNS users who haven't viewed the user data, which is very disadvantageous for communication among SNS users.

Method and system for pushing associated users in social networking service network

TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED


A casing of a fuel cell stack has stack deformation prevention structure for limiting the change of an interval between end plates on the lower side in a direction of gravity, due to swelling of the lower side of the stack body in the direction of gravity. The stack deformation prevention structure is configured such that elastic modulus of a side plate provided on a lower side of the stack body in the direction of gravity is higher than elastic modulus of a side plate provided on an upper side of the stack body in the direction of gravity.

1. Field of the Invention
The present invention relates to a fuel cell stack which includes a stack body formed by stacking a plurality of unit cells in a horizontal direction, and a pair of end plates sandwiching the stack body. Each of the unit cells includes an electrolyte electrode assembly and separators sandwiching the electrolyte electrode assembly. The electrolyte electrode assembly includes a pair of electrodes and an electrolyte interposed between the electrodes.
2. Description of the Related Art
For example, a solid polymer electrolyte fuel cell employs an electrolyte membrane (electrolyte) comprising a polymer ion exchange membrane. The electrolyte membrane is interposed between an anode and a cathode to form a membrane electrode assembly. The membrane electrode assembly is sandwiched between separators to form a fuel cell. In use, normally, a predetermined number of (e.g., several tens to several hundreds of) fuel cells are stacked together to form a fuel cell stack to obtain the desired electrical energy.
At the time of power generation in the fuel cell, by electrochemical reactions of hydrogen and oxygen, water is produced. Therefore, the power generation performance tends to be changed easily depending on the internal state of the produced water. Therefore, the state of the produced water needs to be managed suitably.
In this regard, for example, a fuel cell apparatus as disclosed in Japanese Laid-Open Patent Publication No. 2001-319673 is known. In the conventional technique, as shown in FIG. 16, a fuel cell stack 3 and a compression stress regulator mechanism 4 are provided. Hydrogen from a hydrogen supply apparatus 1 and oxygen from an oxygen supply apparatus 2 are used as fuels for power generation in the fuel cell stack 3. The compression stress regulator mechanism 4 regulates compression stress applied to the fuel cell stack 3.
The compression stress regulator mechanism 4 includes a surface pressure applying member 5, a spherical body 6, a screw 7, and a motor 8. The surface pressure applying member 5 is attached to an end of the fuel cell stack 3. The surface pressure applying member 5 applies a surface pressure to the fuel cell stack 3. The spherical body 6 applies an axial force uniformly to the surface pressure applying member 5. The screw 7 applies the axial force to the spherical body 6. The motor 8 rotates the screw 7.
According to the disclosure, by operation of the compression stress regulator mechanism 4, compression stress is regulated to adjust the space for movement of water in the fuel cell stack 3 to achieve the desired humidification state in the fuel cell stack 3.
In the fuel cell stack 3, swelling of the electrolyte membrane occurs by the water produced in the power generation. In particular, swelled portion becomes large, in particular, on the lower side in the direction of gravity. Thus, difference in swelling occurs in the electrolyte membrane along the direction of gravity.
However, in the conventional technique, the spherical body 6 presses substantially the center of the surface pressure applying member 5 attached to the end of the fuel cell stack 3, and the swelling difference in the direction of gravity, in the electrolyte membrane cannot be eliminated. Thus, for example, when the fuel cell stack 3 is placed in a casing (box), the load is applied non-uniformly to the fuel cell stack 3 due to the difference in swelling. As a result, the casing is deformed undesirably.


A double pull mechanism of a vehicle latch including: a release link; a cable lever pivotally mounted to a portion of the vehicle latch; a manual release pawl pivotally mounted to the cable lever; a lock spring mounted to the release link; a cable secured to the cable lever, wherein pivotal movement of the cable lever via actuation of the cable a first time causes movement of the lock spring such that a protrusion of the manual release pawl is received in an opening of the release link and wherein actuation of the cable a second time causes movement of the release link via engagement of the protrusion in the opening.

Exemplary embodiments of the present disclosure pertain to the art of vehicle latches and in particular, latches that employ a double pull release.
Electric release latches are not configured with a mechanical lock system that decouples the release mechanism from the latch retention system. As such, a manual emergency release mechanism is provided to release the latch retention system. An application of such an emergency release mechanism is usually coupled directly to the retention system resulting in a "single pull" to release the latch manually.
However and depending on the location of the electric release latch there is a need for alternative manual release systems.


An electronic transaction system comprising a host server, at least one transaction device; at least one service provider system; and a content management system. When a transaction device issues a client request to the host server for one or more of the electronic goods and/or services, the host server operates to generate a client response in reply to the client request. In generating the client response a service request may be issued to the at least one service provider system. Also includes a matrix recording a set of permissions and/or constraints applicable to the electronic transaction system. The content management system references the matrix in determining the content to be provided to each transaction device to ensure that the set of permissions and/or constraints are complied with. Each transaction device further receives a set of unique identifiers from the host server, each identifier representing a component of the content.

The following discussion of the background of the invention is intended to facilitate an understanding of the invention. However, it should be appreciated that the discussion is not an acknowledgement or admission that any of the material referred to was published, known or part of the common general knowledge of the person skilled in the art in any jurisdiction as at the priority date of the application.
Retailing of any good or service often requires the input of multiple parties. This input can be difficult to co-ordinate, particularly in situations where the input of one party, or even the need to contact that party for their input, is dependent on the input of another party. In situations where the retailed service or good is distributed over an electronic network, this problem is further exacerbated by the common expectation that such services or goods can be provided immediately.
Accordingly, it is an object of the present invention to provide an electronic transaction system that is customisable in a manner that simplifies the task of co-ordinating input from multiple parties over an electronic network.
A yet further problem with electronic transaction systems is the need for the electronic transaction system to integrate with the existing, pervasive Electronic Funds Transfer at Point of Sale ("EFTPOS") infrastructure. This poses problems as the EFTPOS infrastructure:                typically comprises transaction devices that include only an embedded payment applications because of their limited memory capacity; and        are highly regulated, such that any changes to an application that uses the EFTPOS infrastructure must be recertified—a considerably costly process for the application owner.
One prior method of overcoming this problem has been to integrate the transaction system with the embedded payment application. However, this solution requires the transaction acquirer or processor to modify their main switch to accommodate transaction transactions as well as payment transactions. Such modifications are expensive and time-consuming.
It is therefore an optional, subsidiary, object of the present invention to provide an electronic transaction system that utilises the existing EFTPOS infrastructure while overcoming, or at least partially alleviating, one or more of the aforementioned problems associated with the existing EFTPOS infrastructure.


A illumination arrangement for a shoe includes a D.C. power supply, a DC-AC inverter, and an electro-luminescent element which can be mounted on a surface of an upper portion of the shoe, or with a transparent area of the bottom portion of the shoe. The DC power supply and DC-AC inverter may be mounted in the bottom of the shoe.

This invention relates to lighted shoes, and in particular to lighted shoes with electro-luminescent (EL) light strips. Lighted shoes, such as shown in U.S. Pat. Nos. 3,893,247 and 3,946,505 have been provided in the past that include a flashing light. When an individual wearing the shoes moves back and forth, as during dancing or even while walking, a circuit provides certain functions such as flashing on and off. Such shoes are very useful and provide enhanced safety for many situations, but the conventional light sources are not as versatile or attractive as EL light strips. However, EL light strips cannot simply be used in the conventional lighted shoes because of different electrical requirements. The conventional power supplies, such as shown in U.S. Pat. No. 4,158,922, which discloses a three position switch with different functions for triggering a light by D.C. power, lack components such as a transformer to convert D.C. power to A.C. power suitable for use in EL applications, and thus the previous arrangements cannot easily be adapted for use with EL strips.


According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.

1. Field
Example embodiments relate to semiconductor devices, and more particularly, to high electron mobility transistors (HEMTs).
2. Description of the Related Art
Various power conversion systems include devices for controlling the flow of current and switching current on or off, that is, power devices. The efficiency of power conversion systems may depend on the efficiency of power devices.
As power devices, power metal-oxide-semiconductor field-effect transistors (MOSFETs) using silicon (Si) or power insulated gate bipolar transistors (IGBTs) using Si have been mainly used. However, it is difficult to improve the efficiency of power devices using Si due to limitations in physical properties of Si and manufacturing processes. Attempts to improve conversion efficiency by applying group III-V compound semiconductors to power devices have been made. In particular, high electron mobility transistors (HEMTs) using a heterojunction between compound semiconductors have attracted attention.
A HEMT includes semiconductor layers having different electrical polarization characteristics. In the HEMT, a first semiconductor layer having a relatively high polarizability may induce a two-dimensional electron gas (2DEG) in a second semiconductor layer attached to the first semiconductor layer, and the 2DEG may have a very high electron mobility.
When a HEMT is normally on, current flows between a drain electrode and a source electrode due to a low resistance when a gate voltage is 0 V, current and power may be consumed, and a negative voltage has to be applied to a gate electrode in order to cut off the current between the drain electrode and the source electrode. A HEMT may be normally off so that a current between a drain electrode and a source electrode is cut off when a gate voltage is 0 V. A HEMT that may be normally off by adding a depletion-forming layer has recently been studied.


An apparatus for cooling a quartz halogen lamp is disclosed. Each lamp socket, used for connecting terminals of a quartz halogen lamp to an electrical supply, is mounted to a convector. Heat is conducted away from the terminals to the convector where the heat is then transferred by forced convection to the atmosphere. Alternatively, the convector can be mounted directly to one or more of the terminals. Cooling of the quartz halogen lamp terminals is achieved without passing cooling air directly past the quartz halogen lamp, thereby avoiding problems associated with contamination of the quartz halogen lamp that can lead to premature failure of the quartz halogen lamp.

Ovens and other heating appliances which use quartz halogen lamps as the source of radiant energy for heating objects are known. Such ovens typically include a plurality of quartz halogen lamps which are arranged in parallel and adjacent to the ceiling and/or floor of the oven. When the lamps are energized, they emit high power density radiant energy. The heating of objects, such as food, within these ovens results predominantly from this high power density radiant energy. The filaments of these lamps are low in mass and may be operated at very high temperatures (e.g., at about 3000 Kelvin). These characteristics allow food to be cooked quickly with infrared radiation, while not requiring any pre-heating of the oven.
However, each quartz halogen lamp includes one or more terminals, that are used to connect the lamp to a source of electrical energy, and that must be kept at a temperature below 350.degree. C. Above this temperature, seals in the terminals leak and ingest air at an excessive rate, leading to premature failure of the quartz halogen lamp. Therefore, the terminals of the quartz halogen lamp must be cooled to ensure proper operation and long life.
The most common cooling method is to pass air directly over each quartz halogen lamp. Each quartz halogen lamp typically includes an elongated quartz sleeve that encloses a tungsten filament. By passing air over the quartz sleeve, the terminals of the quartz halogen lamp are cooled indirectly. The heat transfer mechanism used in this cooling method is commonly known as forced convection heat transfer. Forced convection heat transfer is governed by the following equation (Newton's law of cooling): EQU Q=h.sub.c A(T.sub.h -T.sub.c)
where: Q is the rate of heat transfer (BTU/minute); h.sub.c is a convection heat transfer coefficient that is a function of fluid properties, flow field and surface properties of the object being cooled; A is the effective surface area (i.e. the outer surface area of the cylindrical quartz sleeve) ; T.sub.h is the temperature of the hot surface (i.e. the cylindrical quartz sleeve outer surface); and T.sub.c is the temperature of the colder medium (i.e., the cooling air).
Forced convection heat transfer rates are difficult to quantify, mainly due to the difficulty in determining the magnitude of the convection heat transfer coefficient. However, as the cylindrical quartz sleeve has a relatively small surface area, the rate of heat transfer achieved by passing air directly over each quartz halogen lamp will also be proportionally small. As a result, the temperature of the quartz halogen lamp terminals will be higher than desired, unless the cooling air is at a low temperature and/or is passed across the quartz halogen lamp at a very high mass flow rate.
An additional drawback of forced convection cooling of quartz halogen lamps is that air passing over the lamps introduces airborne dust and grease, that will contaminate the outer surface of the cylindrical quartz sleeve, and that will thereby shorten the useful life of the lamp. (To avoid premature failure, manufacturers of quartz halogen lamps recommend that even small amounts of contamination, such as may be caused by fingerprints, for example, be kept away from the surface of the quartz sleeve of a halogen lamp.)
Accordingly, it is desirable to cool quartz halogen lamps without impinging air directly on the lamp surfaces, especially in an environment such as an oven that has relatively high concentrations of contaminants, such as grease and dust in the air within and around the oven.
The present invention is directed to an apparatus for cooling quartz halogen lamps which solves one or more of the above-noted problems. The invention is particularly advantageous when used in a heating appliance, such as an oven.

Apparatus for cooling a quartz halogen lamp with heat conducting convector secured to the lamp terminal or socket


A personal communication system has first and second portable communication devices, each device including a display, a wireless transceiver, a memory having a plurality of stored audio files, a means to select one of the audio files, the audio file selection means being operable to permit a user to select one of the audio files, and an audio speaker. The wireless transceiver of the first device is operable to transmit a signal identifying an audio file selected by the user and the wireless transceiver of the second device is operable to receive the signal, and, upon receipt of the signal, to play the selected audio file on the audio speaker of the second device. The memory includes one or more attributes for each stored audio file, the attributes comprising a sequence attribute, a message type attribute or a target gender attribute. The sequence, message type or target gender attribute have one or more of a plurality of predetermined values and are associated with a characteristic of a song from which an associated audio file is obtained. The device is also operable to receive one or more selections from the user of the predetermined values of the sequence, message type or target gender attributes.

The present invention provides an entertaining and effective system, device and method to facilitate communication between persons, and in particular to between persons in social environments. The system includes a number of personal, portable communication devices each having a display, a wireless transceiver, a memory holding a number of audio files, an audio speaker, and an interface to allow the user to select and transmit one of the stored audio files.
Preferably each device contains a variety of audio files some having generally positive or negative messages, some being suitable for a communication to a male or female, and some being more suitable for invitation or a reply.
In use, a first user selects an audio file to send to the device of a second person. This is done by scrolling through the list of audio files in the display. The user then aims the transceiver of the device toward the device of the second user and depresses the "Send" button, which causes the wireless transceiver to transmit a preferably narrow-beam wireless (e.g., infra-red) signal to the device of the second user. After receiving the signal, the device of the second user locates and plays the audio file selected by the first user. The second user can then choose an appropriate audio file to transmit back to the first user in reply.

Personal communication system, device and method


A non-aqueous electrolyte battery includes an cathode having an cathode mixture layer containing an cathode active material; an anode having an anode mixture layer containing an anode active material which includes a first active material and/or a second active material, where the first active material includes a metal, alloy or compound capable of react with lithium, and the second active material includes a carbonaceous material; and a non-aqueous electrolytic solution. By allowing the anode to contain the first active material in a predetermined amount, and by controlling the packing ratio of the anode mixture layer, the anode is successfully prevented from being degraded due to expansion-and-shrinkage of the anode active material in response to the charge/discharge cycle, and thus degradation of the charge/discharge characteristics of the battery is suppressed.

1. Field of the Invention
The present invention relates to a non-aqueous electrolyte battery which includes an cathode, an anode and a non-aqueous electrolyte, and has battery characteristics improved to a considerable degree.
2. Description of the Related Art
Recent development activities on secondary batteries are directed to reduce weight and increase energy density for applications such as a power source for electronic appliances, e.g. a notebook-sized personal computer, mobile phone and camera-integrated VTR (video tape recorder). One known secondary battery having a large energy density is lithium secondary battery which typically has an energy density larger than those of lead battery, nickel-cadmium battery or the like, and uses lithium metal as a material for the anode. The lithium secondary battery, however, undesirably tends to deposit lithium on the anode during charging, and thus-deposited inactive lithium in a form of dendrite makes it difficult to achieve excellent charge/discharge cycle characteristics.
Lithium ion secondary battery, which uses carbonaceous material as the anode, is known as one solution for this problem. The lithium ion secondary battery is based on a cell reaction by which lithium ion is intercalated between layers of a carbonaceous material, such as graphite, constituting the anode. Thus the lithium ion secondary battery uses a carbonaceous material, capable of insertion/extraction lithium, for the anode active material thereof. This constitution of the lithium ion secondary battery successfully prevents lithium from depositing on the anode during charging, and provides excellent charge/discharge cycle characteristics. The lithium ion secondary battery is also advantageous in improving yield ratio in the manufacture thereof because the carbonaceous material used for the anode is stable in the air.


A computer implemented method, data processing system or computer program product for activating mobile device activity is disclosed. A mobile device may receive an action association to a stance, wherein the stance comprises a sector of the mobile device relative to a base, wherein a user specifies an action associated to the stance. The mobile device can receive a signal that the mobile device is present in the sector. Further, the mobile device, responsive to receiving the signal, may perform the action.

The present invention relates to a computer implemented method, data processing system, and computer program product for inducing activity in a mobile device based on its position and/or orientation and more specifically to activating communications to cloud services in response to position on or near a base station.
Users of mobile devices periodically desire to upload data from such devices to more permanent and durable storage. Frequently, product designers will provide for only the lowest power wireless transmittal of this data in order to conserve usage from small batteries that can be used in these applications. Moreover, multipurpose devices, such as smart phones, can have multiple types of data, for example, audio content, video content, pictures.
However, some users can have preferences as to the type of data that may be exchanged during these times of relative immobility of the mobile device, as can occur, for example, when having an evening meal. Nevertheless, a typical usage scenario requires a user to actively select files to exchange when making such exchanges. It is desirable to remove the effort a of a user in selecting files and perform other operations with a mobile device when the user spontaneously places the device in its relatively immobile place.
An alternative method and or equipment may improve things.

Direction coupling discrimination of networked exchanges

International Business Machines Corporation


A patient support apparatus supports a patient for movement assisted by first and second caregivers and includes a litter. The litter includes a patient support deck extending between first and second ends and defines at least one cavity. First and second evacuation interfaces are coupled to the litter. The first and second evacuation interfaces pivot between first and second unfolded positions and first and second upright positions, respectively, and move between first and second lengthened positions and first and second shortened positions, respectively. The first and second evacuation interfaces are disposed in the cavity when the first and second evacuation interfaces are in the first and second unfolded positions and the first and second shortened positions, respectively, and configured to be grasped and lifted by the first and second caregivers when the first and second evacuation interfaces are in the first and second upright positions, respectively.

Patient support apparatuses facilitate care of patients in a health care setting and are typically, for example, hospital beds, stretchers, cots, tables, wheelchairs, and chairs. A conventional patient support apparatus comprises a base and a litter upon which the patient is supported.
In certain circumstances (such as first response scenarios) caregivers must travel to the patient and transport the patient back to an emergency medical facility. The caregivers must transport the patient support apparatus to the patient to provide care. Often, the patient support apparatus has handles, side boards, and medical equipment structures that protrude from the litter, which makes the patient support apparatus cumbersome to transport to the patient.

Patient support apparatus for supporting a patient for movement assisted by first and second caregivers


The invention provides an aquarium configured with its front and rear walls converging toward the top so that at tabletop or countertop height the viewer can comfortably view the aquarium from an ordinary standing position without bending over. From this viewing position the viewer cannot see through the rear face when the aquarium is filled with water, because the viewer's line of sight is at a sufficient angle that internal reflection occurs.

Aquariums are widely used for keeping the numerous varieties of tropical fish which are available today. Typically the aquarium is set up on a table or stand at countertop height or lower. Since virtually all aquariums are rectangular, this makes viewing the fish from the optimum position--perpendicular to an area just above the centre of the viewing face--somewhat difficult. Adults usually resort to bending over, which makes for uncomfortable viewing after a short time. Furthermore, because the filled aquarium is largely transparent from front to back, the viewer will see air tubes, electrical cords and other unsightly distractions behind the aquarium unless a photograph of a marine scene or like background is affixed outside the rear wall, facing forward, to hide such objects.
The present invention overcomes these disadvantages by providing an aquarium configured with its front and rear walls converging toward the top. Thus, at tabletop or countertop height the viewer can comfortably view the aquarium from an ordinary standing position, without bending over, even at a short distance from the aquarium. Either the front face or the rear face may equally serve as the viewing face. In either case, around the optimum viewing position the viewer cannot see through the opposite face when the aquarium is filled with water, because the viewer's line of sight is at a sufficient angle to the `rear` face that internal reflection occurs. Thus, around this viewing position the viewer sees a reflection on the rear wall of the aquarium.


An information handling system determines a system configuration including a hardware module, and determines an adjusted power budget for the hardware module. The adjusted power budget is based on a calculation including a difference between a date code read from the hardware module and a baseline date, a baseline power budget, a power reduction period and a power reduction interval. The calculation may optionally include a risk factor. In alternate embodiments, an adjusted power budget for a hardware module may be calculated by an order processing system for information handling systems, or by a planning tool for a data center which contains information handling systems.

As the value and use of information continues to increase, individuals and businesses seek additional ways to process and store information. One option is an information handling system. An information handling system generally processes, compiles, stores, and/or communicates information or data for business, personal, or other purposes. Because technology and information handling needs and requirements may vary between different applications, information handling systems may also vary regarding what information is handled, how the information is handled, how much information is processed, stored, or communicated, and how quickly and efficiently the information may be processed, stored, or communicated. The variations in information handling systems allow for information handling systems to be general or configured for a specific user or specific use such as financial transaction processing, airline reservations, enterprise data storage, or global communications. In addition, information handling systems may include a variety of hardware and software components that may be configured to process, store, and communicate information and may include one or more computer systems, networking systems, and data storage systems.
An information handling system in a particular installation may have a power budget. Within the information handling system a particular component or a particular module may have a power budget. An estimate of a power budget for an information handling system or for components of the information handling system may be used in order processing systems, data center planning systems, and in making decisions concerning the operation of the information handling system.
The use of the same reference symbols in different drawings indicates similar or identical items.

Date adjusted power budgeting for an information handling system


A stand-alone lug of non-isotropic polymeric or cellulosic material for installation in a recess in a core member of paperboard material for a roll of paper or other sheet material. The lug has a width in the range of from about 0.25 to about 4 inches, a length in the range of from about 0.5 to about 4 inches, and a thickness in the range of from about 0.25 to about 1 inch. The lug also having at least one radially inner surface, the total circumferential width of the inner surface or surfaces being at least about 0.2 inches. The lug may have a recess extending from one end for receiving a key on a stub-chuck. Where the lug is to be used with splined stub-chucks, the lug may have no recess.

After manufacture, paper such as newsprint paper is conventionally wound on hollow cylindrical core members of paperboard material which, for winding paper thereon to form a roll and unwinding paper therefrom, are mounted on winding or unwinding equipment which has a pair of spaced stub-chucks which engage in opposite ends of a tubular core member. To prevent the core member itself from being damaged by the stub-chucks, it is also conventional to provide the ends of the tubular core members with some kind of reinforcement. A common type of reinforcement comprises a tubular cap member of sheet metal with a U-shaped section which fits over an end of the core member such that an inner annular wall of the cap member engages the inner wall of the core member and an outer annular wall of the cap member engages the outer wall of the core member.
Particular problems arise when paper is being unwound from a roll and fed to a printing press. To maintain a desired tension in the paper being fed to a printing press, it is necessary to provide means to apply a braking force to the roll. This is usually done by providing a braking force to one of the stub-chucks which transmits the braking force to the core member. At least one stub-chuck at an unwinding station may be provided with one or more keys which engage in one or more notches in an end of the core member and/or cap member or may be provided with axially extending splines which engage the inner surface of a core member which has no end reinforcement.
Unfortunately, a metal cap member being isotropic will assist in transmitting cyclical shocks from a stub-chuck and chuck key to an unwinding paper web, especially after chuck wear has occurred with resultant deterioration in the quality of printing on the paper web. Also, splines on a braking stub shaft tend to damage the inner surface of the core member, with resultant loss of proper braking control and resultant deterioration of print quality.
It is therefore an object of this invention to provide a tubular core assembly which at least substantially overcomes these problems.

Tubular core assemblies for rolls of paper or other sheet material


The present invention relates generally to the generation and characterization of anti-CA IX monoclonal antibodies. The invention further relates to the use of such anti-CA IX antibodies in the diagnosis and treatment of disorders associated with increased activity of CA IX, in particular, tumors such as colorectal cancer, renal cell carcinoma (RCC), cervical and other cancers of epithelial origin.

1. Field of the Invention
Embodiments of the present invention concern antibodies binding carbonic anhydrase IX (CA IX) tumor antigen as well as methods and means for making and using such antibodies.
2. Description of the Related Art
The therapeutic utility of monoclonal antibodies (mAbs) (G. Kohler and C. Milstein, Nature 256:495-497 (1975)) is being realized. Monoclonal antibodies have now been approved as therapies in transplantation, cancer, infectious disease, cardiovascular disease and inflammation. Different isotypes have different effector functions. Such differences in function are reflected in distinct 3-dimensional structures for the various immunoglobulin isotypes (P. M. Alzari et al., Annual Rev. Immunol., 6:555-580 (1988)).
Because mice are convenient for immunization and recognize most human antigens as foreign, mAbs against human targets with therapeutic potential have typically been of murine origin. However, murine mAbs have inherent disadvantages as human therapeutics. They require more frequent dosing as mAbs have a shorter circulating half-life in humans than human antibodies. More critically, the repeated administration of murine antibodies to the human immune system causes the human immune system to respond by recognizing the mouse protein as a foreign and generating a human anti-mouse antibody (HAMA) response. Such a HAMA response may result in allergic reaction and the rapid clearing of the murine antibody from the system thereby rendering the treatment by murine antibody useless. To avoid such affects, attempts to create human immune systems within mice have been attempted.
Initial attempts hoped to create transgenic mice capable of responding to antigens with antibodies having human sequences (See Bruggemann et al., Proc. Nat'l. Acad. Sci. USA 86:6709-6713 (1989)), but were limited by the amount of DNA that could be stably maintained by available cloning vehicles. The use of yeast artificial chromosome (YAC) cloning vectors led the way to introducing large germline fragments of human Ig locus into transgenic mammals. Essentially a majority of the human V, D, and J region genes arranged with the same spacing found in the human genome and the human constant regions were introduced into mice using YACs. One such transgenic mouse strain is known as XenoMouse(r) mice and is commercially available from Abgenix, Inc. (Fremont Calif.).
XenoMouse mice are strains of mice that have inactivated mouse IgH and IgK loci and is transgenic for functional megabase-sized human IgH and IgK transgenes. Further, XenoMouse mice are transgenic mice capable of producing high affinity, fully human antibodies of the desired isotype (i.e., IgG1) in response to immunization with virtually any desired antigen. Such a mAbs can be used to direct complement dependent cytotoxicity or antibody-dependent cytotoxicity to a target cell.
Because CA IX is a biomarker found to be overexpressed in most cervical carcinomas (Brewer et al., Gynecol. Oncol., 63(3): 337-44 (1996)) and in some tumors, particularly renal cell carcinoma (Beasley et al., Cancer Res., 61(13):5262-7 (2001) esophageal cancers (Kaluz et al., J. Biol. Chem., 274946):32588-32595 (1999)), and breast cancer, the role of CA IX in tumor cell progression and growth is of intense interest. According to Chia et al., J. Clin. Oncol., 19(16):3660-8 (2001), CA IX, also referred to as MN, may have a role as a marker of hypoxia in carcinomas. Further, overexpression of CA IX may help to maintain the intracellular pH (Beasley et al., Cancer Res. 61(13):5262-7 (2001), giving tumor cells a survival advantage and enhancing resistance to radiotherapy and chemotherapy. Accordingly, CA IX may be an ideal potential target for therapy against such tumors.
Monoclonal antibodies specific for CA IX have been generated (Zavada et al., Br. J. Cancer, 82(11):1808-13 (2000)). These antibodies were specifically directed to the adhesion domain and affected the ability of CA IX to attach to tumor cells. The adhesion domain is located in the proteoglycan domain and contains a sixfold tandem repeat of the six amino acid sequence GEEDLP (Brewer et al., Gynecol Oncol., 63(3); 337-44 (1996). From a phage display library of random heptapeptides, several heptapeptides with the ability to compete for the adhesion epitope on CA IX and inhibit adhesion of cells to CA IX have been identified.
It is believed that the first anti-MN antibody was the G250 antibody generated by Oosterwijk et al. (Am J Pathol 1986 May; 123(2):301-9; Oosterwijk et al. Int J Cancer 1986 Oct. 15; 38(4):489-94) which was an antibody that bound to an antigen that was expressed preferentially in renal cell carcinomas. The G250 antibody was subsequently identified to bind to the MN antigen (Uemura et al. Br J Cancer 1999October;81(4):741-6).
Although monoclonal antibodies have been identified that specifically bind to CA IX, antibodies that specifically inhibit its biological activities, such as cell proliferation and survival which may be essential to tumor progression are needed. The ability to affect the growth and/or survival of tumor cells expressing CA IX on the cell surface may prove to be a treatment having widespread application to many patients afflicted with tumors.

Antibodies against carbonic anhydrase IX (CA IX) tumor antigen


A dielectric isolation type semiconductor device can achieve high dielectric resistance while preventing the dielectric strength thereof from being limited depending on the thickness of a dielectric layer and the thickness of a first semiconductor layer. A drift N− region is bonded to a semiconductor substrate through a buried oxide film to from a high withstand-voltage device in the drift N− region. A first field plate is formed on the drift N− region in the vicinity of a drain electrode. A first high silicon concentration region composed of a buried N+ region is formed in a porous oxide film region forming a part of the buried oxide film at a location right under the drain electrode. The drain electrode and the first field plate are electrically connected to the first high silicon concentration region through a drain N− well region.

1. Field of the Invention
The present invention relates to a dielectric isolation type semiconductor device having a pair of semiconductor substrates bonded to each other through a buried or embedded oxide film.
2. Description of the Related Art
In the past, a variety of dielectric isolation type semiconductor devices have been proposed (for instance, see a first patent document: Japanese patent No. 2739018 (FIGS. 52 through 57)).
As shown in FIGS. 52 and 53 in the first patent document, a semiconductor substrate of a dielectric isolation type semiconductor device is provided on its upper surface and lower surface with a dielectric layer and a rear surface electrode, respectively, with an N− type semiconductor layer being arranged on an upper surface of the dielectric layer.
In addition, the dielectric layer serves to dielectrically isolate the semiconductor substrate and the N− type semiconductor layer from each other, and a first insulating film defines the N− type semiconductor layer in a predetermined range.
An N+ type semiconductor area of a relatively low electric resistance value is formed on the upper surface of the N− type semiconductor layer in the predetermined range defined by the first insulating film, and a P+ type semiconductor area is also formed so as to surround the N+ type semiconductor area. Moreover, a cathode electrode and an anode electrode are connected with the N+ type semiconductor area and the P+ type semiconductor area, respectively, and the cathode electrode and the anode electrode are electrically insulated from each other by a second insulating film.
Also, as shown in FIG. 54 in the first patent document, if both the anode electrode and the rear surface electrode are set to 0V with a positive voltage applied to the cathode electrode being gradually increased there will develop a first depletion layer that extends from a pn junction between the N− type semiconductor layer and the P+ type semiconductor area. At this time, since the voltage of the semiconductor substrate is fixed to ground potential and acts as a field plate through the dielectric layer, a second depletion layer in addition to the first depletion layer develops so as to extend from an interface between the N− type semiconductor layer and the dielectric layer in a direction toward the upper surface of the N− type semiconductor layer.
In this manner, the first depletion layer becomes able to easily extend toward the cathode electrode owing to the extension of the second depletion layer, whereby an electric field at the pn junction between the N− type semiconductor layer and the P+ type semiconductor area is alleviated. This effect is generally known as a RESURF (Reduced SURface Field) effect.
Further, as shown in FIG. 55 in the first patent document, let us assume that in the distribution of electric field strength in a cross section at a location sufficiently apart from the P+ type semiconductor area, the vertical width of the second depletion layer is represented by x; the thickness of the dielectric layer is represented by t0; and the upper surface of the N− type semiconductor layer is made to correspond to the origin of the axis of abscissa. In this case, a full voltage drop V in the above cross section is represented by the following expression (1).V=q·N/(∈2·∈0)×(x2/2+∈2·t0·x/∈3)  (1)
Here, note that in expression (1) above, N is an impurity concentration [cm−3] of the N+ type semiconductor layer; ∈0 is a dielectric constant [C·V−1·cm−1]; ∈2 is the dielectric constant of the N− type semiconductor layer; and ∈3 is the dielectric constant of the dielectric layer.
From expression (1) above, it is found that when the thickness to of the dielectric layer is increased while keeping the amount of full voltage drop V unchanged, the vertical width x of the second depletion layer is decreased. This means the RESURF effect becomes weaker.
On the other hand, under the condition that avalanche breakdown due to the concentration of electric field at the pn junction between the N− type semiconductor layer and the P+ type semiconductor area and the concentration of electric field at the interface between the N− type semiconductor layer and the N+ type semiconductor area does not occur, the dielectric strength of the semiconductor device is eventually determined by avalanche breakdown due to the concentration of the electric field at the interface between the N− type semiconductor layer and the dielectric layer at a location right under the N+ type semiconductor area.
In order to construct the semiconductor device so as to satisfy such a condition, the distance between the P+ type semiconductor area and the N+ type semiconductor area has only to be set very long so that the thickness d and the impurity concentration of the N− type semiconductor layer can be optimized.
For the above condition, it is generally known that when depletion takes place from the interface between the N− type semiconductor layer and the dielectric layer to a front surface of the N− type semiconductor layer, the concentration of the electric field at the interface between the N− type semiconductor layer and the dielectric layer just satisfies the avalanche breakdown condition, as shown in FIG. 56 in the first patent document. In this case, the depletion layer reaches the N+ type semiconductor area, and depletes the entire N− type semiconductor layer.
A dielectric strength V under such a condition is represented by the following expression (2).V=Ecr·(d/2+∈2·t0/∈3)  (2)
Here, note that in expression (2) above, Ecr is a critical electric field strength that causes avalanche breakdown, and the thickness of the N+ type semiconductor area is ignored.
As shown in FIG. 57 in the above-mentioned first patent document, an electric field strength at a boundary between the N− type semiconductor layer and the dielectric layer (i.e., a position at a distance d from the origin to the electrode side) in the vertical distribution of electric field strength in a cross section right under the N+ type semiconductor area reaches the critical electric field strength Ecr.
In case where the dielectric strength V of the semiconductor device is calculated with the N− type semiconductor layer being formed of silicon, and the dielectric layer being formed of a silicon oxide film, d=4×10−4 and t0=2×10−4 are adopted as general values for the distance d and the thickness t0, respectively.
Moreover, in this case, the critical electric field strength Ecr, though influenced by the thickness d of the N− type semiconductor layer, is represented by about Ecr=4×105. When this critical electric field strength Ecr(=4×105), ∈2(=11.7) and ∈3(=3.9) are substituted in the above expression (2), the dielectric strength V is represented by the following expression (3).V=320 V  (3)
Accordingly, when the thickness d of the N− type semiconductor layer increases by 1 μm, a voltage rise or increase ΔV represented by the following expression (4) is obtained.ΔV=Ecr×0.5×10−4=20 [V]  (4)
In addition, when the thickness t0 of the dielectric layer increases by 1 μm, the voltage rise or increase ΔV represented by the following expression (5) is obtained.ΔV=Ecr×11.7×10−4/3.9=120 [V]  (5)
As will be clear from the results of the calculations of the above expressions (4), (5), a rise or increase in the dielectric strength is greater when the dielectric layer is set thick than when the N− type semiconductor layer is set thick, and hence it can be seen that in order to raise or increase the dielectric strength, it is effective to set the dielectric layer thick.
In addition to this, setting the N− type semiconductor layer thick makes it necessary to employ a technique of etching deeper trenches so as to form the first insulating film, which requires development of a new technology and hence is not desirable.
On the other hand, when the thickness to of the dielectric layer is increased, the extension x of the second depletion layer becomes small, as stated above, thus resulting in reduction in the RESURF effect. That is, the concentration of the electric field at the pn junction between the P+ type semiconductor area and the N− type semiconductor layer increases, whereby the dielectric strength will be limited by the accordingly increased probability of avalanche breakdown at this pn junction.
Thus, as stated above, the known dielectric isolation type semiconductor device has a problem in that the dielectric strength of the semiconductor device is limited depending upon the thickness t0 of the dielectric layer and the thickness d of the N− type semiconductor layer.

Dielectric isolation type semiconductor device


A photoelectric sensor array apparatus and method, relates to at least two photoelectric rail elements each having alternating light emitting diode transmitters and photo detecting receivers. The array produces a plurality of light devices with corresponding sensors, whereby the light beams are blocked in the region where an opaque object is located. Each rail contains both transmitters and receivers so that control circuits for the transmitters and receivers are substantially identical and mounted on opposite sides of the array apparatus, to provide a more compact unit of higher resolution and to reduce the design and manufacturing costs. Such construction and method enable the sensing array apparatus to function in direct sunlight or other such photoelectric saturation conditions, which would otherwise blind conventional light sensitive sensor arrays.

Not Applicable
Not Applicable
Not Applicable
1. Technical Field
The present invention relates in general to a photoelectric sensing array apparatus and a method of using it. More particularly, the present invention relates to position sensing of an opaque object located within a single or multi-dimensional array of infra red light beams.
2. Background Art
There are many known infra red (IR) sensor arrays used for position sensing by utilizing a row of infra red light emitting diode (LED) transmitters mounted on a rail, and a row of light sensing receivers (photo detectors) mounted on an opposite rail as illustrated in the diagram of FIG. 1. The position of an opaque object located between the transmitting array and the receiving array is determined by individually pulsing of the transmitter LED light sources while electronically sensing the response of the corresponding photo detectors.
The prior art array thus produces a multitude of invisible light beams, whereby corresponding sensors are blocked at the position where an opaque object is located. The center of the opaque object can be determined by electronically sensing current flow in each of the photo sensors, and then computing the center point of the region of blocked photo sensors.
Commonly this detection process is done in two axes simultaneously to create a two dimensional sensing grid such as found on a computer touch screen. Previous known sensor arrays of this type have the light emitting transmitters mounted on one rail and the photo detecting receivers mounted on the opposite rail. See U.S. Pat. Nos. 4,672,364; 4,841,141; 4,891, 508; 4,893,120; 4,904,857; 4,928,094; 5,162,783 and 5,579,035, which are each incorporated herein by reference.
There are serious drawbacks to this conventional method of photoelectric position sensing for some applications. The sensor array resolution is limited by the diameter of the largest optical component. In most applications, the LED transmitter dissipates much more power than the photo detector, and thereby requires a larger component package size. This configuration limits the resolution of the sensing array. For example, if the LED diameter is 0.25 inch and the photo detector diameter is 0.17 inch, the best attainable in-line array resolution, limited by the package size of the LED, is 4 points per inch. (See FIG. 2).
Conventional infra red light sensing arrays can give false readings or be blinded (photodetector saturation) by, for example, sunlight directed toward the receiving sensor rail. If the sensing is done across a horizontal plane, and if the IR light source is positioned on the bottom rail with the photo detectors on the top rail where they are typically shaded from the sunlight, the blinding problem can be somewhat ameliorated. The vertical plane however remains problematic, since throughout the course of a day, the sunlight can be directed toward either side of the array. Thus, blinding can still occur, and completely interfere with the desired operation of the array.
The design and production costs of multi-dimensional light beam arrays are high relative to other sensing technologies. For example, a two-dimensional touch-sensing array for a rectangular computer display typically requires four unique printed circuit cards. Thus, each one of the four circuits requires separate design and development, as well as production costs for assembling the circuits to the array, since each requires separate manufacturing techniques.
Thus, it would be highly advantageous to have a new and improved light sensing array which is relatively less expensive to manufacture, and which can be utilized at all times, even in direct sunlight. It would also be desirable to have a sensor array with a minimum or at least a greatly reduced number of different unique component assemblies to minimize or greatly reduce design time and reduce manufacturing costs.
It is, therefore, the principal object of the present invention to provide a new and improved photoelectric sensing array apparatus and method to increase the resolution of the array.
It is another object of the present invention to provide such a new and improved photoelectric sensing array apparatus and method, wherein the sensing array apparatus can still function even under certain extreme error conditions such as photo detector saturation caused by direct sunlight exposure.
It is yet another object of the present invention to provide such a new and improved photoelectric sensing array apparatus and method, wherein the array apparatus has a substantially reduced design and manufacturing cost.
Briefly, in accordance with the present invention, there is provided a new and improved photoelectric sensing array apparatus and method, which enable a sensing array to be constructed at a relatively low cost at improved resolution, and be able to function even under certain extreme error conditions such as photoelectric saturation caused by direct sunlight exposure.
A photoelectric sensor array apparatus and method, relates to at least two photoelectric rail elements each having alternating light emitting diode transmitters and photo detecting receivers. The array produces a plurality of light devices with corresponding sensors, whereby the light beams are blocked in the region where an opaque object is located. Each rail contains both transmitters and receivers so that control circuits for the transmitters and receivers are substantially identical and mounted on opposite sides of the array apparatus, to provide a more compact unit of higher resolution and to reduce the design and manufacturing costs. Such construction and method enable the sensing array apparatus to function in direct sunlight or other such photoelectric saturation conditions, which would otherwise blind conventional light sensitive sensor arrays.

Photoelectric sensing array apparatus and method of using same


A microelectromechanical switch having a beam cantilevered from a switch base, a first control electrode, having no path to ground, in contact with the fixed end of the cantilevered beam and a second control electrode, also having no path to ground, mounted to the switch base underneath the cantilevered beam, but not in contact therewith. A contact electrode is located underneath the free end of the cantilevered beam. The first and second control electrodes are manipulated to actively effect both the ON and OFF states of the microelectromechanical switch by forcing the beam in and out of contact with the contact electrode.

Microelectromechanical switches are used in a variety of applications and in particular for satellite communication systems with architecture that includes switching matrices and phased array antennas. It is desirable to have a switch having low-insertion loss, high-isolation, and high-switching frequency.
Presently, the microelectromechanical switches known in the prior art include a beam cantilevered from a switch base, or substrate. The beam acts as one plate of a parallel-plate capacitor. A voltage, known as an actuation voltage, is applied between the beam and an electrode on the switch base. In the switch-closing phase, or ON-state, the actuation voltage exerts an electrostatic force of attraction on the beam large enough to overcome the stiffness of the beam. As a result of the electrostatic force of attraction, the beam deflects and makes a connection with a contact, electrode on the switch base, closing the switch. Ideally, when the actuation voltage is removed, the beam will return to its natural state, breaking its connection with the contact electrode and opening the switch.
The switch-opening phase, or OFF-state, is not directly controlled, however, and relies on the forces of nature embodied in the spring constant of the beam to effect the opening of the switch. However, the forces of nature are not always predictable and therefore unreliable.
For example, in some cases, once the actuation voltage is removed, stiction forces, (forces of attraction that cause the beam to stick to the contact electrode), between the beam and the contact electrode overcome the spring restoring force of the beam. This results in the free end of the beam sticking to the contact electrode and keeping the switch closed when, in fact, it should be open. Prior art cantilever beam type switches have no mechanism to overcome stiction forces upon switching to the ON-state.
Another problem associated with the cantilever beam type switch is a problem intrinsic to the beam's change of state from open to close. The operation of the beam is inherently unstable. When closing, the beam deforms gradually and predictably, up to a certain point, as a function of the actuation voltage being applied to the switch. Beyond that point, control is lost and the beam's operation becomes unstable causing the beam to come crashing down onto the secondary electrode. This causes the beam to stick as described above, or causes premature deterioration of the contact electrode. Both conditions impair the useful life of the switch and result in premature failure.
There is a need for a microelectromechanical switch that overcomes the problems associated with prior art cantilevered beam-type switches.

Single-pole single-throw microelectro mechanical switch with active off-state control


The present invention relates to a grain refrigerator including a housing having a grain storage space formed thereon to discharge grains stored therein, a fixing rod located at the center of the inside lower portion of the housing, dew condensation prevention means fixed to the fixing rod, a support plate located on a top periphery of the dew condensation prevention means, an evaporator disposed on the support plate to generate cool air, and a cooling tube disposed on a top periphery of the support plate on the outside of the evaporator to cool the grains, wherein a first pipe and a second pipe connected to the lower portion of the evaporator pass through a through hole of the support plate and a first drain hole of the dew condensation prevention means and are thus exposed to the outside of the housing.

A conventional grain refrigerator for maturing and storing grains to an appropriate low temperature is disclosed in Korean Patent No. 10-0620550 (entitled: refrigerator having evaporator located therein) as issued to the same applicant as the invention, and as shown in FIG. 1, the conventional grain refrigerator includes a plate 2 fixed horizontally to the inside center of a housing and having a through hole formed thereon, a grain storage portion formed on top of the plate 2 to store grains therein, and a discharge container located on top of a partition wall located just under the through hole to put the grains discharged through the through hole of the plate 2. The discharge container is movably placed on top of the partition wall, and a compressor 7 is located under the plate 2.
Further, an evaporator 130 is placed on top of the center of the plate 2, and a cooling rod 100 is disposed inside the evaporator 130. The plate 2 is inclined toward the through hole 21 formed at the center thereof to allow the grains stored in the grain storage portion to be discharged downward through the through hole 21, and in detail, support plates 22, 23 and 24 are located on horizontal planes with respect to four edges of the plate 2 by means of welding. A vertical rod 101 is straightly located up on the center of the support plates 22 connecting both side edges of the plate 2 by means of welding, and screw threads are formed by given length along the upper and lower peripheries of the vertical rod 101.
Further, a cooling rod lower plate 110 having a through hole formed at the center thereof is fitted to the vertical rod 101. In this case, the cooling rod lower plate 110 has a protruding projection 111 formed between the through hole and the outer peripheral surface thereof in a circumferential direction, and if it is fitted to the vertical rod 101, a washer 104 and a nut 102 are fitted to the vertical rod 101 to allow the cooling rod lower plate 110 to be fitted to the vertical rod 101.
In this case, the underside of the cooling rod lower plate 110 is seated onto a connection portion of the support plate 22 and the support plate 23 and a connection portion of the support plate 22 and the support plate 24, thereby rigidly fixing the cooling rod lower plate 110 to the vertical rod 101.
Also, a guide tube 105 is fitted to the vertical rod 101 in such a manner as to be located inside the protruding projection 111 of the cooling rod lower plate 110, and an elastic sponge tube 106, which is made of a sponge material, is insertedly placed on top of the guide tube 105. When the evaporator 130 is fitted to the outer peripheral surface of the sponge tube 106, the guide tube 105 fixedly supports the sponge tube 106. Further, a cooling rod cylinder 120 is insertedly located on the outer peripheral surface of the protruding projection 111 of the cooling rod lower plate 110. The evaporator 130 is located on the outside of the sponge tube 106.
The evaporator 130 includes a linear part 131 extended straightly from top to bottom and a spiral part 132 extended upward from the bottom of the linear part 131, and a capillary pipe 133 is connected to top of the linear part 131 to introduce a refrigerant into the linear part 131 therefrom.
Also, an insulation tube 150 made of an insulating material is located at the outside of the spiral part 132, and a heater 160 formed of a surface heating element or nichrome wire is located between the insulation tube 150 and the cooling rod cylinder 120 in such a manner as to be heated by means of electricity supplied from the outside. Further, a temperature sensor 170 is located between the cooling rod cylinder 120 and the insulation tube 150 to output a sensed temperature to a controller.
Furthermore, a cooling water guide pipe 180 is located on the cooling rod lower plate 110 to allow the water collected inside the cooling rod to flow to the compressor 7, and a cooling rod upper plate 140 is contactedly located on the top end periphery of the cooling rod cylinder 120. The cooling rod upper plate 140 has a cylindrical tube open on the bottom thereof and in such a manner as to come into contact with top of the cooling rod cylinder 120. The cooling rod upper plate 140 has a through hole formed on a given position of the side peripheral surface thereof and a through hole formed on a center of a curved top surface thereof to pass the vertical rod 101 therethrough.
The vertical rod 101 passes through the through hole 141 formed on the top surface of the cooling rod upper plate 140, and a discharge pipe 134 connected to the top end periphery of the spiral part 132 of the evaporator 130 and the capillary pipe 133 connected to top of the linear part 131 are exposed to the outside through the through hole 141, so that a washer 142 and a nut 143 are fixedly fitted to the vertical rod 101.
After the discharge pipe 134 is connected to a connection pipe, next, and it is exposed to the outside of the housing through an induction tube 144, and the induction tube 144 is insertedly coupled to the through hole 141 of the cooling rod upper plate 140.
Further, a cap 145 is covered on the top surface through hole 141 of the cooling rod upper plate 140 because the top of the vertical rod 101 protrudes outward from the cooling rod upper plate 140 and the nut 143 is exposed outward therefrom, thereby hiding the top of the vertical rod 101 and the nut 143. In this case, the cap 145 is attached to the cooling rod upper plate 140 by means of an adhesive.
According to the conventional grain refrigerator as mentioned above, the cooling rod lower plate 110 is located on the underside of the cooling rod cylinder 120, the cooling rod upper plate 140 is located on the top of the cooling rod cylinder 120, and the cooling rod 100 is located inside the evaporator 130.
According to the conventional grain refrigerator, further, the vertical rod 101 is located on the cooling rod lower plate 110 to maintain the evaporator 130 vertically, and the discharge pipe is located on the cooling rod lower plate 110 to discharge the water collected on the cooling rod lower plate 110 to the outside. Also, the cooling rod upper plate 140 has to be configured to have fixing means for fixing the vertical rod 101 thereto and the induction tube 144 for drawing the start portion (capillary pipe) and the end portion (discharge pipe) connected to the evaporator 130 to the outside, which undesirably causes a complicated structure.
Due to the above-mentioned complicated structure, accordingly, the conventional grain refrigerator has the following problems. An assembling process becomes complicated; skilled technologies are needed for the assembling process; a defect rate becomes high; the number of parts to be assembled increases; and a manufacturing cost is raised.