The present invention improves the OPE characteristic generated by the difference between sparse and dense mask patterns and promotes fidelity in the design of the pattern. Because of this, the present invention includes a step of forming a resist having an acid dissociative dissolution suppression group on a substrate, a step of coating the resist with an acid polymer dissolved in an alcohol based solvent and forming an upper layer film, a step of exposing through a mask, a step of performing a baking process, and a step of processing with an alkali developer, and wherein in the step of performing a baking process, a mixing layer is formed on the resist by the upper layer film and in which a thicker mixing layer is formed in an unexposed part of a region where the pattern density of the mask pattern is high compared to a region where the pattern density is low.

1. Field of the Invention
The invention relates to a method of forming a resist pattern, which improves an OPE characteristic generated by the difference between sparse and dense mask patterns and has high fidelity to the design of the pattern, and a method of manufacturing a semiconductor device using the method of forming the resist pattern.
2. Description of the Background Art
With high integration of semiconductor devices, a method of manufacturing a semiconductor that is suitable for a micro process has been studied and developed. However, deterioration of fidelity to the design of the pattern based on the optical proximity effect (referred to as "OPE" below) by adjacent patterns has been a problem, and the OPE characteristic is an important parameter in miniaturization.
In photolithography, it is known that multiple interferences of light occur in a resist film, and the dimensional width of the resist pattern changes along with changes in the resist film thickness. The multiple interferences of light occur as a result of irradiated light that is incident on the resist film formed on the substrate interfering with the reflected light from the substrate, and the amount of optical energy absorbed in the thickness direction of the photoresist film differs.
As described in Japanese Patent Laying-Open No. 08-015859, a method of forming an anti-reflective film on the substrate as a means of reducing multiple interfering actions of light in the resist film is conventionally known. The conventional method of forming a resist pattern in which the anti-reflective film is formed on the substrate is shown in FIGS. 9A to 9F. In this method, first, as shown in FIG. 9A, an anti-reflective film 92 is formed on a semiconductor substrate 97, and then a resist film 91 is spin-coated, and next, as shown in FIG. 9B, resist film 91 is baked and hardened. Continuously, as shown in FIG. 9C, an exposure process is performed through a mask 93, and after exposure, as shown in FIG. 9D, it is baked. Then, as shown in FIG. 9E, it is processed with a 2.38% alkali developer 94, and a fixed resist pattern 95 as shown in FIG. 9F is obtained. Although the interfering action can be reduced to some degree by anti-reflective film 92 on substrate 97, the OPE can not be improved sufficiently.
In order to prevent in-film multi-reflection inside the resist or to prevent the deactivation of an acid of a chemical amplification type resist due to amine in air, as described in Japanese Patent Laying-Open No. 07-295228, a method of forming an upper layer film of a water-soluble polymer on the resist is known. In the chemical amplification type resist, there is an acid catalyst type resist in which an acid is generated in the exposed part as a catalyst, and it is a resist with high sensitivity and high resolution because the catalyst is used. However, after exposure and before baking is performed, the acid catalyst generated in the exposed part becomes inactive due to the influence of a small amount of amine which exists in air, and the line width and resolution of the resist change. It is considered that the formation of the upper layer film is effective in preventing such a PED (Post Exposure Delay) phenomenon.
The conventional method of forming a resist pattern in which an upper layer film is formed is shown in FIGS. 10A to 10H. First, as shown in FIG. 10A, an anti-reflective film 12 is formed on a substrate 17, and then a resist film 11 is spin-coated, and next, as shown in FIG. 10B, the resist film 11 is baked and hardened. Continuously, as shown in FIG. 10C, after an upper layer film 16 is formed on a water-soluble polymer, it is baked and hardened as shown in FIG. 10D. Next, as shown in FIG. 10E, an exposure process is performed through a mask 13, and after exposure, as shown in FIG. 10F, it is baked. Then, as shown in FIG. 10G, it is processed with a 2.38% alkali developer 14, and a fixed resist pattern 15 as shown in FIG. 10H is obtained. However, because the upper layer film formed in such a manner is water-soluble and does not penetrate into the resist, and a mixing layer is not formed, the OPE characteristic generated by the difference between sparse and dense resist patterns can not be improved (Jeng-Horng Chen et al., "Characterization of ArF immersion process for production", Optical Microlithography XVIII, edited by Bruce W. Smith, Proceedings of the SPIE 2005, Vol. 5754, pp. 13-22).

Method of forming resist pattern and method of manufacturing semiconductor device


A repair circuit includes a test data processing unit that outputs first and second fail detection signals using first and second test data of first and second memory banks, respectively, in response to a test mode signal, a repair address control unit that sets a priority of the first and second memory banks and selectively stores first and second addresses of the first and second memory banks based on the set priority in response to the first and second fail detection signals, and a fuse unit that performs repair programming based on the addresses selectively stored in the repair address control unit.

1. Field
Exemplary embodiments of the present invention relate to a semiconductor design technology and, more particularly, to a semiconductor memory device that performs a repair operation through self-address rupture.
2. Description of the Related Art
A defective memory cell of a semiconductor memory device may be repaired in the wafer or package state. For a repair operation, repair addresses of defective memory cells may be programmed in a fuse unit. Specifically, for a repair operation in the package state, the repair addresses may be programmed in the fuse unit through self-address rupture. In contrast, repair operations n the wafer state are accomplished by external testing equipment. FIG. 1 is a block diagram for illustrating a repair operation through self-address rupture in a typical semiconductor memory device.
Referring to FIG. 1, the semiconductor memory device includes a bank group 110, a test data processing unit 120, a repair address latching unit 130, and a fuse unit 140.
The bank group 110 includes a plurality of memory cell arrays, and outputs a plurality of pieces of test data GIO_DATA<0:N> in a compression test mode. A compression test is used in order to reduce a test time, and is performed by writing substantially the same data in a plurality of memory cells in a write operation, and compressing and outputting data of the plurality of memory cells in a read operation.
The test data processing unit 120 combines the plurality of pieces of test data GIO_DATA<0:N> with one another and outputs a fail detection signal GIO_FAIL when a self-address rupture signal SELF_RUP is received. When all the plurality of pieces of test data GIO_DATA<0:N> do not have substantially the same value, the test data processing unit 120 determines a corresponding bank as a failed bank and generates the fail detection signal GIO_FAIL. The self-address rupture signal SELF_RUP is outputted from a mode register set, and is directly received from outside (e.g. an external piece of testing equipment or a host) of the semiconductor memory device, or is generated inside the semiconductor memory device.
The repair address latching unit 130 latches addresses ADD<0:K> corresponding to the failed bank in response to the fail detection signal GIO_FAIL. When the fail detection signal GIO_FAIL is activated and a bank is determined to have failed, the repair address latching unit 130 stores the addresses ADD<0:K> applied to the repair address latching unit 130. The addresses ADD<0:K> applied to the repair address latching unit 130 correspond to addresses of a bank in which the plurality of pieces of test data GIO_DATA<0:N> have been stored.
The fuse unit 140 includes a fuse set, and electrically programs repair addresses ADD_LAT<0:K> outputted from the repair address latching unit 130 in the fuse set when a rupture enable signal RUP_EN has been activated. The fuse unit 140 receives excess current or high voltage and performs programming work for changing electrical connection states of respective fuses.
FIG. 2 is a detailed circuit diagram of the repair address latching unit 130 illustrated in FIG. 1.
Referring to FIG. 2, the repair address latching unit 130 includes a pass gate PG that is driven in response to the fail detection signal GIO_FAIL, and a latch section 210 that latches the addresses ADD<0:K> depending on whether the pass gate PG is driven.
The pass gate PG selectively transfers the received addresses ADD<0:K> under the control of the fail detection signal GIO_FAIL, and the latch section 210 stores a signal transferred from the pass gate PG.
As described above, in the repair operation through the self-address rupture, it is determined through the plurality of pieces of test data GIO_DATA<0:N> outputted from the bank whether the bank is failed. Addresses corresponding to a bank determined to be failed are stored, and the stored addresses are programmed. In such a repair operation, since it is possible to efficiently detect a repair address through the compression test, repair address programming work is efficiently performed.
In a memory chip used in the mobile field, the bank structure is divided into a first area (left) and a second area (right) other than a single area, and a repair operation is performed. That is, when failure occurs in the first area (left) or the second area (right), a repair operation of a corresponding area is performed. However, when failure simultaneously occurs in the first area (left) and the second area (right), a repair operation of the corresponding areas may not be properly performed due to a collision of information reporting the occurrence of failure.

Repair circuit and semiconductor memory device including the same


A service that augments a key element of Unified Messaging and Unified Communications initiatives—i.e., Mobile Subscriber Location Awareness—to enhance substantially the value, usefulness, etc. of the presence awareness, place shifting, etc. components of such initiatives. The service may optionally leverage the capabilities of a centrally-located, full-featured Messaging Inter-Carrier Vendor.

1. Field of the Invention
The present invention relates generally to telecommunications services. More particularly, the present invention relates to capabilities that enhance substantially a key element of Unified Messaging (UM) and Unified Communications (UC) initiatives—i.e., Mobile Subscriber (MS) Location Awareness (LA).
2. Background of the Invention
As the 'wireless revolution' continues to march forward the importance to a MS, for example a user of a Wireless Device (WD) such as a cellular telephone or a BlackBerry that is serviced by a Wireless Carrier (WC), of their WD grows substantially.
For example, under UM and UC schemes or environments, among other things, the storage, management, presentation, etc. of multiple messaging paradigms or models (including, inter alia, voice, Short Message Service [SMS], Multimedia Message Service [MMS], Internet Protocol [IP] Multimedia Subsystem [IMS], Instant Messenger [IM], Electronic Mail [E-Mail], facsimile transmission [FAX], etc.) are dynamically adapted to match or otherwise meet the unique requirements, needs, etc. of a MS′ particular circumstances and are subsequently exposed or offered to a MS′ WD through mechanisms such as Session Initiation Protocol (SIP), Real-time Transport Protocol (RTP), Session Initiation Protocol for Instant Messaging and Presence Leveraging Extensions (SIMPLE), eXtensible Messaging and Presence Protocol (XMPP), etc.
A key element in the determination of a MS′ particular circumstances' (as referenced above) is knowledge of the current physical location of a MS′ WD—i.e., MS LA.
MS LA-based service offerings are of particular interest to, for example, individuals who are 'on call' for business reasons (e.g., technical support, etc.) or for personal reasons (e.g., a medical condition such as organ transplantation, pregnancy, etc.), first responders, individuals within a large corporate environment, etc.
The present invention extends key elements of wireless technology to augment MS LA-based offerings and addresses various of the (not insubstantial) challenges that are associated with same thereby incrementally enhancing the value, usefulness, etc. of the presence awareness, place shifting, etc. components of UM and UC schemes or environments.

This patent is subject to a terminal disclaimer.

System and method for location transparency


A method for operating an automatic transmission is provided. The method includes synchronizing a first positive shifting element of the at least one positive shifting element with a first process, a second process or a third process depending upon an input speed and/or an output speed of the automatic transmission. The first process, the second process and the third process can provide smooth and/or satisfactory shifting of the first positive shifting element at various input speeds and output speeds of the automatic transmission.

Automatic transmissions generally include at least one planetary gear set and a plurality of shift elements. The shift elements selectively engage components of the planetary gear sets in order to hinder or prevent rotation of the components. Selective actuation of the shift elements adjusts the gear ratio of the automatic transmission and shifts the automatic transmission between its various gears.
Certain automatic transmissions include dog clutch shifting elements. During various gear shifts, the dog clutch is engaged or closed. Engaging the dog poses certain challenges. For example, the dog clutch is generally synchronized prior to engaging the dog clutch. When the dog clutch is synchronized, components of the dog clutch rotate at a common speed and may engage each other more easily. Conversely, such components may grind against each other and be damaged if the dog clutch is engaged while the dog clutch is not synchronized. However, synchronizing the dog clutch can be difficult and/or time consuming.
The automatic transmission may change gears and engage the dog clutch in a variety of circumstances. For example, when an associated vehicle is climbing a hill or rapidly accelerating, the automatic transmission may engage the dog clutch in order to downshift and change the gear ratio of the automatic transmission. As another example, the automatic transmission may engage the dog clutch when the vehicle is stopped or operating at a very slow speed in order to enter a forward gear or a reverse gear of the automatic transmission. Smoothly and/or quickly synchronizing and engaging the dog clutch when the associated vehicle is operating at such disparate speeds can be difficult.
Accordingly, a method for synchronizing a dog clutch of an automatic transmission would be useful. In particular, a method for synchronizing a dog clutch of an automatic transmission that also smoothly and/or quickly synchronizes the dog clutch in a variety of operating conditions would be useful.

Method for operating an automatic transmission


A method and apparatus for providing low cost multi-channel magnetic tape recording is disclosed. A tape head having the same number of read and write cores as a typical low cost single channel recording head, is modified to achieve multi-channel recording. One channel performs conventional read-after-write while the other channel performs "virtual" read-after-write, that is, the track in the second channel is read only after that track has been written over the entire length of the tape. As the direction of tape travel changes, the channel performing read-after-write alternates.

The constantly increasing operational speeds of digital computers are creating a demand for corresponding increases in data storage capacities of magnetic tape recording and reproducing systems, while maintaining the special requirements of high speed digital tape systems.
Tape drives use separate read and write cores in order to verify that the data was written correctly to the tape. One method is to verify all written data, as the data is written, and re-write any defective blocks. This method is referred to as "read-after-write". Read-after-write is preferred because of high defect count on tapes and the open environment of tape drives.
Most tape drives operate in a bi-directional mode in order to avoid wasted rewind time. That is, data may be written while the tape travels in either the forward or reverse direction. It is desirable that tape recording and reproducing systems for use as computer data storage devices provide high data transfer rate and perform a read check on all written data. To achieve those goals, tape drives use parallel multiple read/write channels in order to achieve high data transfer rates. FIG. 1a offers a typical single channel head found in tape drives. One set of read and write cores is employed during the forward and reverse direction of tape travel. Thus only one track may be written at a time, in each direction. This head arrangement is inexpensive to manufacture, but not desirable for high data transfer rate recording. FIG. 1b shows a multi-channel head arrangement employing a plurality of read and write cores. This type of design may be applicable for high data transfer rate recording, but it is very expensive to fabricate. An alternative multi-channel head design uses three islands, as illustrated in FIGS. 2a and 2b, wherein the cores of the middle island are shared by the cores in the outer island. The disadvantages of such prior art multi-channel head designs are the price and cost. Head cost is the largest contributor to the cost of tape drives. Specifically, the large number of cores and island complexity coupled with low manufacturing yields and high labor content keep the head cost very high. On the other hand, single channel tape drives are less expensive to manufacture. However, such low end tape drives have been unable to keep pace with the ever increasing demand for high performance.
Thus, a hitherto unsolved need has remained for a low cost multi-channel recording head suitable for precise high data transfer rate recording.

Method and apparatus for a low cost multi-channel tape recording head


A method for manufacturing an aluminum circuit board including a step of spraying a heated metal powder containing aluminum particles and/or aluminum alloy particles to a ceramic base material, and of forming a metal layer on a surface of the ceramic base material. A temperature of at least a part of the metal powder is higher than or equal to a softening temperature of the metal powder and lower than or equal to a melting point of the metal powder at a time point of reaching the surface of the ceramic base material. A velocity of at least a part of the metal powder is greater than or equal to 450 m/s and less than or equal to 1000 m/s at the time point of reaching the surface of the ceramic base material.

An aluminum circuit board including a ceramic base material such as alumina, and a circuit layer formed on both surfaces of the ceramic base material has been practically realized as a semiconductor device that is used in a power module or the like.
Recently, there is a tendency that a heat release value of the semiconductor device increases in accordance with smaller size and higher performance of devices. For this reason, the ceramic base material for a ceramic circuit board has been required to higher heat conductivity, in addition to high electrical insulating properties.
Therefore, the application of the ceramic base material having high heat conductivity, such as aluminum nitride, has been considered. However, in a case where a copper circuit is provided on the ceramic base material having high heat conductivity, there is a problem that a crack tends to be easily generated in the vicinity of a joining portion between the ceramic base material and the copper circuit, due to repeated heat cycles or a temperature change in the service environment during the operation of such semiconductor element.
In order to avoid such a problem, it has been considered to use aluminum having lower yield strength than that of copper as a circuit material. For example, the following methods have been proposed as a method for forming an aluminum circuit on the ceramic base material.
(1) A molten metal method including forming a joined body of molten aluminum and a ceramic base material by bringing the molten aluminum and the ceramic base material into contact with each other, and by cooling the molten aluminum and the ceramic base material, and by adjusting the thickness of the formed aluminum layer by mechanical grinding, and finally by etching the aluminum layer (for example, refer to Patent Literature 1)
(2) A brazing method of brazing an aluminum foil or an aluminum alloy foil on a ceramic base material, and then performing etching (for example, refer to Patent Literature 2)
(3) A method of providing an aluminum-based brazing material on a ceramic base material, and forming an aluminum circuit layer thereon by the so-called cold spraying method (for example, refer to Patent Literature 3)

Method for manufacturing aluminum circuit board

NATIONAL INSTITUTE FOR MATERIALS SCIENCE


A support structure of a filter element for supporting a filter material that is adapted to filter a fluid includes a first frame portion and a second frame portion. The first frame portion has a plurality of radially-extending fingers that are longitudinally spaced from one another. The first frame portion is disposed entirely on an unfiltered side of the filter material. A second frame portion has a pair of longitudinally-extending support surfaces that are disposed in a spaced, facing relationship with respect to one another. The second frame portion is disposed entirely on a filtered side of the filter material. The radially-extending fingers of the first frame portion and each of the longitudinally-extending support surfaces of the second frame portion support the filter material to define a first radial channel. The radially-extending fingers of the first frame portion space the longitudinally-extending support surfaces of the second frame portion apart from one another.

It is well known to utilize filters to remove contaminants from fluids. By way of example, fuel filter assemblies are used to filter fuel for an internal combustion engine of a motor vehicle. Filter assemblies typically comprise a sideways, upwardly or downwardly mounted canister having a porous filter media enclosed in the canister. For example, it is known to use porous filter media fabricated from paper, as well as porous filter media fabricated from cardboard. The liquid enters and fills or partially fills the canister so that all or a portion of the filter media is doused with the liquid as it passes through the filter media and exits the canister. As the liquid passes through the filter media, contaminants are retained by the filter media and thus removed from the fluid.
Since filtration is accomplished by passing the fluid from one side of the filter media to the opposite side of the filter media, the rate at which the filter is able to process a fluid is dictated by the surface area of the filter media and the porosity of the filter media. Thus, in order to maximize the processing capacity of a filter element having a particular porosity, various designs have been previously proposed that attempt to increase the surface area of the filter media by way of particular geometric configurations of the filter media, without increasing the overall size of the filter canister. However, since the filter media is typically fabricated from a porous material such as paper or cardboard, structure must be provided within the filter element to retain the filter media in a particular geometric configuration. These structures often impede fluid flow and are typically either difficult or labor-intensive to fabricate. Thus, it would be desirable to provide a structure that supported a filter media in a particular geometric configuration that did not impede fluid flow and was not difficult or labor-intensive to fabricate.


A liquid droplet detecting device includes nozzles arranged in a paper width direction orthogonal to a paper conveying direction to discharge liquid droplets, a light emitting element provided on one side of the paper width direction to emit a light beam for liquid droplet detection, a light receiving element provided on the other side of the paper width direction to receive the light beam, a storage in which correspondence information on each of the nozzles and a scan position of the light beam when discharge of a liquid droplet from each of the nozzles is detected is stored, a controller to allow the light beam to scan according to the correspondence information, and a detector to determine presence or absence a liquid droplet discharged from each nozzle from an output of the light receiving element.

1. Field of the Invention
The present invention relates to a liquid droplet detecting device, an inkjet recording device incorporating such a device and a liquid droplet detection method.
2. Description of the Related Art
An inkjet recording device to form an image on a paper by discharging ink from nozzles of recording heads is known. Nozzle discharge failure may occur in this device due to dried ink or entry of foreign matter and air bubbles.
Such nozzle discharge failure results in deteriorating image quality. In view of this, there is a known inkjet recording device with a liquid droplet detector which determines presence or absence of ink droplets from nozzles of a recording head by emitting a light beam to ink droplets from the nozzles and receiving scattered light by the droplets in a light traveling direction.
Another known inkjet recording device is a line inkjet printer in which recording heads having nozzles are arranged on a straight line along a paper width to discharge liquid droplets from the nozzles, aiming for improving image quality and increasing printing speed.
A known line inkjet printer comprises light emitting elements arranged in a paper conveying direction to emit light beams, to detect liquid droplets from nozzle lines arranged both in a paper width direction and the paper conveying direction orthogonal to the paper width direction.
In this printer the light emitting elements to emit light beams and light receiving elements to receive scattered light of the light beams are arranged separately with a distance corresponding to a paper width. Because of this, this printer is likely to be affected by reflected light and diffracted light so that it is difficult to accurately detect scattered light.
Moreover, an error in the optical axes of the light emitting elements and light receiving elements is large since both of the elements are separated. In view of this, a technique has been developed for detecting ink droplets at a proper position by decreasing the size of light beams, enhancing drive outputs of the light emitting elements and moving the light emitting elements in a paper conveying direction.
It is possible to detect liquid droplets at a proper position by moving the light emitting elements. However, there may be an error in the nozzle arrangement in the recording heads and an error in the directions in which ink droplets are discharged. To check presence or absence of a liquid droplet for all the nozzles by turns, it is necessary to reciprocate the light emitting elements in accordance with the positions of the nozzles to emit the light beams in a reciprocative manner in the paper conveying direction.
Along with a repetition of reciprocated scanning, an error in the stop positions of the light emitting elements will occur, causing target liquid droplets to be outside in the detection width of the light beam. Accordingly, an offset between a detected liquid droplet and a nozzle discharging this liquid droplet will occur. This problem can be dealt with by emitting light beams obliquely relative to the arrangement of the nozzles to reduce the errors in the stop positions of the light emitting elements and in the droplet discharge direction and moving the light emitting elements in one direction.
However, there is a drawback in the oblique light emission that the number of liquid droplets in the detection width of the light beam is decreased. This increases the moving area of the light emitting elements and requires a large amount of time for the liquid droplet detection.
In particular, an inkjet recording device used for printing high-speed continuous stationary comprises fixed recording heads for the purpose of printing total print area along a paper width at a certain resolution at high speed. The paper width is as large as 21 inches.
For example, for printing on a paper 21 inches wide at a recording density of 600 DPI, 12,600 nozzles per line are needed in the paper width direction.
Thus, this type inkjet recording device requires an enormous amount of time to detect liquid droplets from all of the nozzles by a light emission with the number of droplets in the detection width of the light beam decreased.
Further, a light emitting element unit and a light receiving element unit have to be individually mounted in the recording head unit. Therefore, it is difficult to position the light emitting elements and light receiving elements oppositely with a mounting error taken into account.
Furthermore, Japanese Laid-open Patent Application Publication No. 2006-110964 discloses a technique to concurrently detect ink droplets discharged from nozzles from a change in outputs of a received light beam by obliquely emitting a light beam relative to nozzle arrangement so as not to overlap ink droplets in a cross section of received light and controlling timing at which the ink droplets are discharged. This device can shorten time for determining presence or absence of discharged ink droplets.

Liquid droplet detecting device, inkjet recording device incorporating same, and liquid droplet detection method


Storage-stable acrylate-functional alkyd resin compositions are disclosed that include an acrylate-functional alkyd resin and a monofunctional mercaptan such as a chain transfer agent. The compositions disclosed exhibit excellent stability on storage, and have utility as binders for coating compositions useful as low VOC, quick dry paints.

In recent years, considerable efforts have been made by the coatings industry to develop coating formulations containing little or no volatile organic compound (VOC) content. Regulations to limit the amount of VOC content of industrial coatings have encouraged research and development to explore new technologies directed at reducing solvent emissions from industrial solvent-based coatings operations used to coat such products as automotive parts, appliances, general metal products, furniture, and the like. However, while the move to reduced organic solvent-based compositions brings health and safety benefits, these lower VOC content coating compositions must still meet or exceed the performance standards expected from solvent-based compositions.
Alkyd resins are one of the most common binders used for ambient-cure, solvent-based coatings. The resistance properties of traditional solvent-borne alkyd resins are developed via autooxidative crosslinking of the alkyd film. Crosslinking occurs when the activated methylene groups in the unsaturated fatty acids or oils of the alkyd are oxidized in air to give hydroperoxides, which subsequently decompose to generate free radicals, resulting in oxidative crosslinking. This oxidative crosslinking process is commonly accelerated by adding driers, such as, for example, various salts of cobalt, zirconium, calcium, and manganese. However, while alkyd resins have shown, and continue to show, promise, they have relatively slow "dry" and/or cure times, particularly at ambient temperatures. Various modifications have been made to alkyd resins to address such concerns.
One such attempt includes polymerization of an alkyd resin with a vinyl compound, such as styrene or methyl methacrylate, via a free-radical reaction, to produce a vinyl-alkyd copolymer or a vinyl alkyd. Vinyl alkyd resins generally have a higher molecular weight and a higher Tg, producing coatings with reduced tack-free time (via solvent evaporation). However, the through-dry time (oxidation of the film) of such coatings is longer due to the decreased degree of unsaturation in the alkyd as a result of copolymerization with the vinyl compound. This problem is described in further detail in Resins for Surface Coatings, Vol. 1, pp. 181 et seq., ed. by P. K. T. Oldring and G. Hayward, SITA Technology, London, UK, 1987, which is incorporated herein by reference. An additional drawback is that paint formulations containing vinyl alkyd resins require greater amounts of solvent, due to the increased molecular weight and Tg of the vinyl alkyd.
JP 48085628 (hereinafter JP '628) describes light-curable coating compositions made from a drying oil-modified alkyd resin which is further modified using glycidyl acrylate, glycidyl methacrylate, or its derivative. In this reference, drying oil-modified alkyd resins having carboxyl groups and an oil length of 20-80 are treated with glycidyl acrylate, glycidyl methacrylate, or its derivative, in the presence of a polymerization inhibitor. In a specific embodiment, a drying oil-modified alkyd resin having an acid number of 100 and an oil length of 34 is reacted with 36 parts glycidyl methacrylate, to give a resin varnish having an acid number of 5.0.
The formulations are made by a process in which hydroquinone, a polymerization inhibitor, is used in the reaction mixture, to prevent the alkyd from gelling during resin synthesis. A drawback of this approach is that the presence of a polymerization inhibitor in paint formulations is known to prolong the drying times of the resulting coating films.
U.S. Pat. Nos. 6,534,598 and 6,548,601 disclose ambient oxidative-cure compositions based on acrylate-functionalized alkyd resins. These ambient oxidative-cure compositions may be used, for example, in fast drying, high solid paint or enamel compositions or formulations. However, we have found these acrylate-functionalized alkyd resins to be less storage-stable than commercial applications demand. Their viscosity and molecular weights tend to increase over time. As a result, paint formulation becomes difficult and the resulting coating properties are inconsistent.
U.S. patent application Ser. Nos. 10/121,927 and 10/121,396, filed Apr. 12, 2002 and presently pending, likewise disclose ambient oxidative-cure compositions that include an acrylate-functionalized alkyd resin. U.S. patent application Ser. No. 10/356,286, filed Jan. 31, 2003 and presently pending, discloses acrylate-functional alkyd coating compositions that exhibit improved dry time.
U.S. Pat. No. 4,571,420 discloses a composition comprising an acrylic polymer backbone having pendant unsaturation, at least about 0.3 equivalent of polyfunctional mercaptans per equivalent of unsaturation, and 0.001 to about 0.15 wt. % vanadium compound. This reference teaches the utilization of about 0.3 to about 5 equivalents of a polyfunctional mercaptan as a crosslinker to react the pendant unsaturated groups in the acrylic polymer upon exposure to air.
U.S. Pat. No. 6,476,183 discloses a coating composition comprising an oxidatively drying polyunsaturated condensation product, such as an alkyd, having pendant groups comprising unsaturated carbon-carbon bonds; a polythiol having two or more —SH groups; and a siccative. This reference teaches the utilization of a polyfunctional thiol as a crosslinker, to improve the oxidative cure of an alkyd, thus requiring a polythiol having two or more —SH groups.
JP 2075669 describes a primer composition prepared by mixing an oxidation-curable alkyd resin, a dryer, a fat or oil, and/or a silane coupling agent. The alkyd resin may be a resin-modified or phenol-modified alkyd resin, the fat or oil may be a condensate of a natural unsaturated fat or oil or an unsaturated higher fatty acid with an alcohol, and the optional silane coupling agent may have an amino, mercapto, or epoxy group.
U.S. Pat. No. 4,016,332 discloses a polymer prepared by reacting a polyester or polyol with a mercaptan comprising a hydrocarbon chain of 1 to about 18 carbon atoms, and substituted with at least one carboxyl group, to form a mercapto-terminated reaction product, and reacting this product with one or more ethylenically unsaturated monomers in the presence of a peroxygen or azo catalyst to form the polymer. The mercapto-terminated reaction product may act as a chain transfer agent in the subsequent reaction with the ethylenically unsaturated monomer. The polyester can be oil-modified, an oil such as sunflower oil being employed in its preparation. The oil-modified polyester preferably contains 20-80 wt. %, more preferably, 30-65 wt. % of the oil component.
U.S. Pat. No. 4,116,903 discloses a storage-stable emulsion that includes an interpolymer containing about 5-90 wt. % of a preformed water-soluble alkyd resin, the balance being at least one in situ emulsion polymerized vinyl monomer. Preferred vinyl monomers include styrene and acrylic and methacrylic esters. The product interpolymer contains, on a 100 wt. % total non-volatile solids basis, preferably 5-90 wt. %, more preferably 15-50 wt. %, typically 25-50 wt. % alkyd resin, the balance being in situ polymerized vinyl monomer. Other materials that can be present at the time of or during emulsion polymerization include chain transfer agents such as n-octyl mercaptan or t-dodecyl mercaptan.
U.S. Pat. No. 3,932,562 discloses a process for producing a resin that comprises graft polymerizing by chain transfer onto a mercapto group-containing alkyd resin one or more ethylenically unsaturated polymerizable compounds in a weight ratio of 5:95 to 70:30, preferably 10:90 to 60:40. The ethylenically unsaturated compounds are selected from a large group of monomers that includes glycidyl carboxylates. The mercapto group-containing alkyd resin can be formed by introducing a mercapto group into the alkyd resin molecule either in the course of or after the preparation of the alkyd resin, but prior to the chain transfer reaction with the one or more ethylenically unsaturated compounds.
U.S. Pat. No. 4,234,466 discloses a process for preparing a solid pigment spherical particle dispersion that comprises: subjecting to suspension or bulk polymerization in the presence of a suspension stabilizer a liquid composition comprising at least one ethylenically unsaturated polymerizable compound selected from a group that includes glycidyl vinyl compounds such as glycidyl methacrylate, at least one resin selected from a group that includes alkyd resins having at least one mercapto group to be grafted with the ethylenically unsaturated compound, and at least one pigment. The polymerization can be carried out in the presence of a chain transfer agent such as a mercaptan, for example, t-dodecyl mercaptan. The ethylenically unsaturated polymerizable compound and the resin containing at least one mercapto group are used in amounts of, respectively, 27-96 wt. % and 3-60 wt. % on the basis of the weight of the liquid composition.
U.S. Pat. No. 4,517,322 discloses a non-gelled resin formed by reacting in an aqueous medium an ethylenically unsaturated polyester having an ethylenically unsaturated component containing two carboxylic acid moieties with ethylenically unsaturated monomers that include an ethylenically unsaturated carboxylic acid. Relative to the total weight of the non-gelled resin, the ethylenically unsaturated polyester and the ethylenically unsaturated monomers are reacted in amounts of, respectively, about 90-30 wt. %, preferably about 80-35 wt. %, and about 10-70 wt. %, preferably about 20-65 wt. %. The ethylenically unsaturated polyester can be an alkyd resin prepared in the presence of a drying, semi-drying, or non-drying oil or fatty acid. The ethylenically unsaturated carboxylic acid can be combined with another monomer such as styrene or an acrylic or methacrylic ester. In illustrative Example 1-B, the reaction of the ethylenically unsaturated polyester and the ethylenically unsaturated monomers is carried out in butyl cellosolve in the presence of the chain transfer agent mercaptoethanol.
U.S. Pat. No. 4,983,716 discloses a process for producing a non-aqueous dispersion of addition polymers in an alkyd medium that comprises: forming an alkyd having a non-volatile content greater than about 75% by reacting a triglyceride oil with a trifunctional carboxylic acid or anhydride, and then reacting the resulting product with a trifunctional alcohol or a mixture of tri- and di-functional alcohols to form the alkyd. One or more monomers are polymerized in the presence of the alkyd by a free radical mechanism. The triglyceride oil can be sunflower oil, and the trifunctional acid or anhydride can be trimellitic acid or anhydride. The monomer is selected from a group of compounds that includes multifunctional epoxides. The polymerization mixture contains alkyd and polymerizable monomers in amounts of, respectively, 25-99 wt. %, preferably 30-60 wt. %, most preferably, 40-55 wt. %, and 1-75 wt. %, preferably 40-70 wt. %, most preferably, 45-60 wt. %. According to the '716 patent, a chain transfer agent such as methyl mercaptopropionate or 2-mercaptoethanol is added to the polymerization mixture in an amount of from about 0.1-6.0 wt. % of the monomer.
U.S. Pat. Nos. 5,340,871 and 5,348,992 contain similar disclosures pertaining to aerosol compositions containing non-aqueous dispersions of addition polymers in alkyd media. The non-aqueous dispersion preferably comprises the reaction product of two or more monomers, at least one of which has hydroxy functionality, and the polymerization is carried out in the presence of a chain transfer agent selected from the group consisting of methyl mercaptopropionate, dodecyl mercaptan, and 2-mercaptoethanol. The polymerization mixture contains alkyd and polymerizable monomers in amounts of, respectively, about 35-75 wt. %, preferably about 40-60 wt. %, and about 65-25 wt. %, preferably about 60-40 wt. %. The alkyds are typically formed from triglyceride oils or fatty acids thereof, for example, sunflower oil. Other starting materials include multifunctional alcohols such as pentaerythritol and multifunctional carboxylic acids or anhydrides such as phthalic acid and trimellitic acid.
U.S. Pat. No. 6,051,633 discloses a process for producing an air-dry alkyd-stabilized non-aqueous dispersion of addition polymers in an alkyd medium. The polymerization is carried out in the alkyd medium via a free radical addition mechanism in the presence of a mercaptan-containing chain transfer agent that preferably is selected from the group consisting of methyl mercaptopropionate, dodecyl mercaptan, and 2-mercaptoethanol. The polymerization mixture contains alkyd and polymerizable monomers in amounts of, respectively, about 25-75 wt. %, preferably about 40-60 wt. %, and about 75-25 wt. %, preferably about 60-40 wt. %. There remains a need in the art for an acrylate-functional alkyd resin that is storage-stable and commercially viable for ambient oxidative-cure, fast-dry coatings having low VOC.


A method and corresponding system for operating in a network in which stations communicate over a shared medium are presented. The shared medium has at least one varying channel characteristic that varies approximately periodically. The method includes providing repeated beacon transmissions from a coordinator station for coordinating transmissions among a plurality of the stations, wherein at least some beacon transmissions are synchronized to the varying channel characteristic; and transmitting from a first station to at least one receiving station during a time slot determined based on at least one of the beacon transmissions received by the first station from the coordinator station.

Communication systems are designed to reliably transfer information using the underlying physical medium. Well-known communication systems like Ethernet use special wiring (e.g., Cat 5 cable) for exchanging information. Such systems, by design, allow all connected stations to exchange data at a fixed data rate. With the increasing need for ubiquitous exchange of information, a new class of no-new-wire systems has emerged. Such systems use existing infrastructure to exchange information. Power line communication systems are one example of such systems.
Power line communication systems use existing AC wiring to exchange information. Owing to their being designed for much lower frequency transmissions, AC wiring provides varying channel characteristics at the higher frequencies used for data transmission (e.g., depending on the wiring used and the actual layout). To maximize the data rate between various links, stations need to adjust their transmission parameters dynamically. This process is called channel adaptation. Channel adaptation results in adaptation information specifying a set of transmission parameters that can be used on each link. Adaptation information includes such parameters as the frequencies used, their modulation, and the forward error correction (FEC) used. In high-speed power line communication systems, good channel adaptation is critical to providing high data rates on all links.
Higher data rates can be achieved in power line communication systems by taking into account the fact that the noise and/or the frequency response of the power line channel between any pair of stations depends on the AC line cycle phase. Power line communication systems share the power line medium with various appliances that draw electric power from the power supply grid. These devices are one of the major sources of noise that affect the characteristics of power line channels. Several types of such devices generate noise that varies with the AC line cycle phase. For example, in some cases the noise around the zero crossing on the AC line cycle is lower by comparison to the noise at the peaks of the AC cycle. Devices like triac-controlled dimmers turn on and off during each AC line cycle. These not only generate impulse noise, but also change the frequency response of the power line channel (e.g., by a load on the line that attenuates some frequencies more than others). Further, several devices that use AC motors (e.g., vacuum cleaners, drills, etc.) generate noise that is also a function of the phase of the line cycle. The net effect is a time varying channel whose noise characteristics and frequency response depend on the AC line cycle phase. Various techniques can be used to take into account the varying channel characteristics. For example, for communication between a pair of stations over an AC power line (or other medium having a periodically varying channel) a different channel adaptation can be assigned to each of multiple phase regions of the periodically varying channel.

Communicating in a network that includes a medium having varying transmission characteristics


Generating an output pulse signal (Y), which has an output signal period (Ty), which is divided by a magnitude transition into a leading part (LP) and a trailing part (TP). During each output signal period (Ty) altering means (27 to 36) determine in a coarse and fine way a duration (TLP, TTP) of one or both of said output signal period parts (LP, TP) by using a clock signal (Cx) of different clock cycle durations (TCx0, TCx1, TCx2), dependent on a value of a first digital number (D1) and a value of second, less significant digital number (D3, D5), respectively.

US 2003/0117118 discloses a method and a circuit to provide an output pulse signal with a modulated pulse width with increased accuracy for small values of a digital input number which determines a duration of a width of a pulse of the output signal. The output pulse signal is used to control a switching power supply for a DC load. According to the reference, without taking measurements, a resolution of a location of transition of a leading part and a trailing part of the output signal period would be constant for all values of an input digital number. That is, the resolution is determined by a duration of a period of a modulation clock pulse signal. In that case, if the value of the digital number is small, a change thereof by a small amount will have much more effect by percentage than changing a large value of the digital number by the same amount. For several applications, such as for accurate control of a switching power supply, this may be unwanted. Therefore, the reference discloses, for small values of the digital number, to extend or not the width of a pulse of output signal periods by one or more modulation clock pulse periods. To achieve that, clock pulses of different clock signals are counted and counted numbers are divided by each other to provide a whole result and a remainder result to therewith determine the times on which the width of the output signal pulses must be changed or not.
The prior art method is complex, difficult and expensive to implement and, more important, it does not provide an increase of resolution for relatively large values of the digital input number.

Generating a pulse signal with a modulated duty cycle


A blast wave attenuator comprising: a deflector and a foam or foamed composite inside of the deflector. The foamed composite may be a combination of fabrics, fibers, and small reinforcements embedded in a polymeric foam matrix. The foamed composites can be fabricated using a one-step process. The deflector can be manufactured from metal sheets including but not limited to titanium, stainless steel, carbon steel, and superalloys. The blast wave attenuator of the present invention greatly improves the impact resistance and protection of blast protective footwear and combat boots or the like without sacrificing traction or mobility.

There are many different kinds of landmines being used in the world. The shock wave created by the main charge of the landmine is used to deliver damage to the victim. In a fragmentation mine, the shock wave is harnessed to shatter the casing of the mine and the detonation gasses immediately behind the shock wave propel the fragmentation into the victim. In a blast mine, the shock wave shatters the bone, ruptures the blood vessels, and tears the soft tissue of a victim and the extremely hot and high-pressure gasses of the detonation products rip apart the remainder of the victim's appendage. This is then followed by high velocity ejecta, which could be soil, pebbles, or fragmentation, which is then hurled into the victim's open wound.
The safest way to approach a mine is in the prone position, and checking the ground with a long probe. This is because the power of a landmine dissipates quickly, and the father away one is, the safer one is. The other reason that the prone position is the best has to do with the fact that the landmine is buried. When it explodes, the explosion has more upward power than outward power, because air offers less resistance than earth. However, in the case of accidental detonation, the foot of the deminer is directly above the explosion. For protection of deminers from accidental detonation, there are three types of protective footwear configurations. The first configuration is a "mattress" that spreads the weight of the deminer over a sufficient area, so that there is not enough pressure on the ground to trigger the mine. This system is not widely used because it offers very little traction to deminers, and they would rather not fall onto a minefield. The second configuration is called the Spider Boot developed by Med-Eng systems in Canada. It supports the wearer's weight on four long legs that increase the standoff distance 15-20 cm. For this reason, the spider boot offers very good protection, and has been used for humanitarian deminers. However, this system is not practical for military deminers, because these shoes are awkward to walk in, and military deminers must be able to operate at 20 feet per minute and combat troops must move at a faster pace. The third system uses blast attenuating materials and designs incorporated into the soles of boots to protect against the blast waves. There are several variations of this concept including Wellco Enterprises "Blast Boot" and their "Blast Overboot". These boots offer the traction and mobility needed by military deminers, but do not offer as much protection as the Spider Boot.
A typical blast wave attenuator made by Wellco Enterprises consists of a carbon steel V-shape deflector, a metal honeycomb (steel or aluminum) that is machined to fit inside the cavity of the V-shape deflector, and a steel sheet covering the honeycomb core. The honeycomb and the entire blast wave attenuator weigh 34.4 gm and 155.5 gm, respectively see, for example FIG. 6 attached hereto.
Today it is estimated that there are 110 million active Anti-Personnel (AP) mines in the world. These weapons remain active for decades after a military conflict and are responsible for killing or maiming up to 500 people a week. Most of the time, a deminer is aware of the landmine, and can take his own precautions, such as increasing the standoff distance to a point where his Personnel Protective Equipment (PPE) will be effective. However, the largest threat to a deminer is accidentally stepping on a mine of which he was unaware. This places his foot and his leg in almost direct contact with the explosion. At such a close proximity, the current blast protective footwear can only prevent the loss of his leg at minimal charge masses. Other options for protection are available, but they suffer from either extremely poor traction or greatly reduced mobility. Humanitarian/civilian deminers can afford to sacrifice their mobility for significantly improved protection. However, military deminers operate at 20 feet per minute and combat troops must operate at an even faster pace. There thus remains a continuing need for protective equipment that increases the survival rate and decreases the severity of harm to human deminers.
There therefore remains a need for blast boots, particularly for military applications that provide the desired blast protection while retaining the mobility required by military deminers.

Composite blast wave attenuators for boots


A container includes an electromagnetic coupling module on an inner surface of a container main body and a radiator made of a metal material on an outer surface of the container main body. The electromagnetic coupling module includes a feeder circuit board, on which a radio IC chip is mounted and in which a feeder circuit including a resonant circuit that has a predetermined resonant frequency and includes an inductance element is provided. The electromagnetic coupling module and the radiator preferably transmit and receive high-frequency signals through electromagnetic coupling. The container thus has an electromagnetic coupling module that includes a radio IC chip that is resistant to a shock applied from the outside and an environmental change, realizes an easy arrangement of a radiator and the electromagnetic coupling module, provides a preferable radiation characteristic, and is suitably used in an RFID system.

1. Field of the Invention
The present invention relates to containers with electromagnetic coupling modules, and more specifically, to a container with an electromagnetic coupling module having a radio IC chip used in an RFID (Radio Frequency Identification) system.
2. Description of the Related Art
Recently, RFID systems, in which a reader/writer that generates an induction field contactlessly communicates with an IC chip (also referred to as an IC tag or a radio IC chip) that is attached to an article or a container and stores predetermined information to exchange information, have been developed as article management systems. For example, Japanese Unexamined Patent Application Publication No. 2003-67711 discloses an article having an electrically conductive antenna unit and an IC chip that are provided on an outer surface of a packaging container, such as a side surface or an upper surface of a cardboard box.
However, attachment of the antenna unit and the IC chip onto the outer surface of the packaging container has a problem in which the IC chip may be damaged by a shock caused when the IC chip is hit by another article during packaging, transfer, and/or storage. Additionally, the antenna unit and the IC chip must be arranged to overlap each other in an electrically conductive manner. Since the displacement in the overlapping state causes trouble in the transmission and reception quality of signals, it causes a problem in which high accuracy is required in the arrangement. Furthermore, since the IC chip is provided on a signal radiating surface of the antenna unit, there is also a problem that the IC chip disturbs a signal radiation characteristic of the antenna unit.

Container with electromagnetic coupling module


A copper interconnect having a transition metal-silicon-nitride barrier (106). A transition metal-nitride is co-deposited with Si by reactive sputtering in a Si containing ambient to form barrier (106). The copper (110) is then deposited over the transition metal-silicon-nitride barrier (108) with good adhesion.

As the density of semiconductor devices increases, the demands on interconnect layers for connecting the semiconductor devices to each other also increases. Therefore, there is a desire to switch from the traditional aluminum metal interconnects to copper interconnects. Unfortunately, suitable copper etches for a semiconductor fabrication environment are not readily available. To overcome the copper etch problem, damascene processes have been developed.
In a damascene process, the IMD is formed first. The IMD is then patterned and etched. The barrier layer 14 and a copper seed layer are then deposited over the structure. The barrier layer 14 is typically tantalum, tantalum nitride or some other binary transition metal nitride. The copper layer is deposited by electroplating over the seed layer. The copper is then chemically-mechanically polished (CMP′d) to remove the copper from over the IMD 16, leaving copper interconnect lines 18 as shown in FIG. 1. A metal etch is thereby avoided.
Barrier layer 14 is required because copper has high diffusivity. Copper interconnects totally rely on the encapsulating barrier materials to prevent copper from diffusing through to cause leakage and transistor poisoning. The basic requirements for the barrier materials are 1) good barrier efficiency, 2) good copper wettability, and 3) strong copper to barrier bonding. The most commonly used barrier materials to date are TiN, Ta, and TaN. TiN and Ta do not meet the first criterion very well although Ta is a little better than TiN. If TiN or Ta is used as the barrier material in copper interconnects, a relatively thick layer of barrier material is required in vias and trenches. This becomes less and less viable as device geometries shrink. TaN has near amorphous structure and therefore, it has a better barrier efficiency. However, TaN, does not meet the last two criteria well. Copper does not like to wet to TaN surfaces and tends to detach from TaN due to the weak bonding strength. This causes voids in the copper during the via fill and negatives impacts the electromigration performance. Metal-silicon-nitrides have better wetting properties. Unfortunately, current methods of forming these metal-silicon-nitrides are difficult to perform and result in a film having high resistivity.

In-situ co-deposition of Si in diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability


The invention provides a method of forming a magnetic layer with stable magnetic properties and stable recording-and-reproducing properties, by uniformizing the distribution of oxygen radical concentration upon reactive sputtering, and thereby uniformizing the concentration of oxygen to be taken into the magnetic layer along the plane direction. That is, the invention relates to a method of forming a magnetic layer by reactive sputtering, which comprises: placing a substrate in a reaction container; arranging a pair of electrode units comprising sputtering electrodes and targets which are disposed on surfaces of the sputtering electrodes and which contain chromium other than the oxide thereof, so that the electrode units respectively face both sides of the substrate while the targets are on the substrate sides; feeding an argon-water mixture gas to vicinities of the respective surfaces on the substrate sides of the pair of electrode units; and applying reactive sputtering so that the chromium other than the oxide thereof contained in the targets can be made into chromium oxide as a constituent to form the magnetic layer having the granular structure.

1. Field of the Invention
The invention relates to a method of forming a magnetic layer by reactive sputtering, and more specifically to a method of forming a magnetic layer of a perpendicular magnetic recording medium for use in a hard disk drive or the like, a magnetic recording medium, and a magnetic recording and reproducing apparatus.
Priority is claimed on Japanese Patent Application No. 2008-291031, filed Nov. 13, 2008, the content of which is incorporated herein by reference.
2. Background Art
In recent years, magnetic recorders such as magnetic disk units, flexible disk units, and magnetic tape units have been used over a remarkably wider range of applications, and play more important roles. With this trend, an attempt is being made to highly increase the recording density of magnetic recording media for use in such recorders. In particular, the surface recording density of a HDD (hard disk drive) has been vigorously increasing since the introduction of an MR head and PRML technology. Moreover, since a GMR head and a TuMR head have also been introduced in recent years, the surface recording density keeps increasing at a rate as high as about 100% per year.
Meanwhile, as for a magnetic recording system of a HDD, a so-called perpendicular magnetic recording system has become popular rapidly in recent years as a substitute technology for a conventional longitudinal magnetic recording system (a recording system in which the magnetization direction is oriented parallel to the substrate plane).
In the perpendicular magnetic recording system, crystal grains in a recording layer in charge of data-recording have their easy-magnetization axes perpendicular to a substrate. The term "easy-magnetization axis" refers to an axis along which magnetization occurs easily. In the case of a typical cobalt (Co) alloy, an axis parallel to the normal line of the (0001)-plane in the Co hcp structure (c-axis) serves as the easy-magnetization axis.
In the perpendicular magnetic recording system, the easy-magnetization axes of magnetic crystal grains are vertical. Therefore, this system features a resistance, even if higher recording densification is advanced, against influences from demagnetizing fields which are formed between recording bits, and thus is magnetostatically stable.
The perpendicular magnetic recording medium typically comprises a structure in which a ground layer, an inner layer (orientation control layer), a magnetic recording layer, and a protective layer are formed in this order on a nonmagnetic substrate. In addition, on completion of the formation of the protective layer, the surface is often coated with a lubricant layer.
Moreover, in many cases, a magnetic film called a soft magnetic underlayer is provided under the ground layer. The ground layer and the inner layer are formed in order to improve the properties of the magnetic recording layer. Specifically, they act to align the crystal orientation of the magnetic recording layer as well as regulating the shape of the magnetic crystal.
For the higher recording densification of the perpendicular magnetic recording medium, it is necessary to concurrently achieve thermal stability and a low-noise state. Two methods are usually employed to reduce noise. The first one is a method in which magnetic crystal grains in the recording layer are magnetically separated and isolated to thereby reduce the magnetic interaction between magnetic crystal grains. The second one is a method in which the sizes of the magnetic crystal grains are made smaller. Specifically, for example, a method can be enumerated in which SiO2 or the like is added to a recording layer to thereby foam a perpendicular magnetic recording layer having a so-called granular structure, where magnetic crystal grains are surrounded by SiO2-rich grain boundary regions or the like (for example, see Japanese Unexamined Patent Application, First Publication No. 2002-342908).
As a method of forming a perpendicular magnetic recording layer having such a granular structure, a method has been disclosed in which a recording layer of a granular structure is formed by using a composite target which contains a CoCrPt alloy and SiO2 by DC magnetron sputtering in an argon-oxygen mixture gas atmosphere (IEEE Transactions on Magnetics, Vol. 40, No. 4, July 2004, pp. 2498-2500). This document reported that the coercive force was enhanced and the recording-and-reproducing properties were improved by performing reactive sputtering in an oxygen-containing atmosphere.
In addition, it is also reported that the optimum oxygen partial pressure is determined by the SiO2 concentration, that the optimum oxygen partial pressure increases as the SiO2 concentration decreases, and that the magnetic properties and the recording-and-reproducing properties are considerably impaired when the oxygen concentration becomes excessive beyond the optimum value.
Furthermore, Japanese Unexamined Patent Application, First Publication No. 2004-346406 disclosed a sputtering apparatus capable of uniformizing the film thickness, the film quality, and the film characteristics by, upon introduction of a sputtering gas and a reactive gas into a vacuum chamber in order to form a film by reactive sputtering, uniformizing the concentration of the reactive gas which flows along the surface of a target and thereby uniformizing the reaction between the reactive gas and the target. This apparatus is a sputtering apparatus for depositing a film on a substrate by arranging a cathode having at least one target so that the cathode faces the substrate, and sputtering the target on the basis of reactive sputtering, wherein the apparatus comprises a central gas-introduction mechanism by which the reactive gas supplied from a reactive gas feeding device flows outward from the central part of the cathode unit along the surface of the target.
Incidentally, upon such reactive sputtering in an oxygen-containing atmosphere, an event can be seen in which the concentration of oxygen to be taken into the magnetic layer varies depending on the position on the disk, because the distribution of the oxygen radical concentration is nonuniform in the sputtering chamber. This causes an inconvenience in that it is difficult to achieve uniformization of the magnetic properties and the recording-and-reproducing properties all over the entire surface of the disk.
As a method for solving this inconvenience, the 2nd patent document has disclosed a method in which a reactive gas is allowed to flow outward from the central part of a cathode unit along the surface of the target.
However, although this method can provide the reactive gas per se uniformly to the substrate surface, because of the gas flow, a plasma space formed in the vicinity of the substrate surface flows to the downstream, which makes the plasma space unstable.
Moreover, in this method, the gas flows in between the substrate and the plasma, where a plasma-free space is formed. This plasma-free space inconveniently cancels oxygen radicals being ejected from the plasma space to the substrate surface. This results in a deceleration of the film formation by reactive sputtering, as well as causing a nonuniformity of the magnetic film deposited on the substrate surface and a nonuniformity of the film thickness distribution.
Under such circumstances, there has been a demand for a magnetic layer formation method capable of uniformizing the distribution of the oxygen radical concentration upon reactive sputtering in an oxygen-containing atmosphere. However, in the current situation, an effective and appropriate method has not yet been provided.

Method for forming magnetic layer, magnetic recording medium, and magnetic recording and reproducing apparatus


Disclosed is a non-aqueous electrolyte secondary cell excellent in capacity retention rate and I-V characteristics after repeated cycles. The secondary cell contains a negative electrode active material containing scaly graphite particles and coated graphite particles. The coated graphite particles contain graphite particles and a coating layer coating the surfaces of the graphite particles. The coating layer contains amorphous carbon particles and an amorphous carbon layer. It is preferable that the negative electrode active material contain 1 to 6% by mass of the scaly graphite particles and that the graphite particles, the amorphous carbon particles, and the amorphous carbon layer be in a mass ratio of 100:α:β where 1≦α≦10, 1≦β≦10, and α≦1.34β.

Portable information terminals such as mobile phones and laptop personal computers have been rapidly reduced in size and weight in recent years. In line with this trend, non-aqueous electrolyte secondary cells such as lithium-ion secondary cells have been widely used, because of their high energy density and high capacity, as power sources for driving the portable information terminals. These non-aqueous electrolyte secondary cells are also being increasingly used as power sources for driving such devices as electric vehicles (EVs) and hybrid electric vehicles (HEVs) that require a large amount of current.
The non-aqueous electrolyte secondary cells include a negative electrode made of carbon materials. Of the materials, graphite-based carbon materials such as natural and artificial graphite are more used, because of their larger discharge capacity, than amorphous carbon materials.
The cells used as the power sources for driving EVs and HEVs are required to have high-rate charge-discharge capacity characteristics suitable to perform rapid charge and high load discharge. In a cell including a graphite negative electrode, however, high-rate charge-discharge operations often cause lithium deposition on the surface of the graphite negative electrode. The deposited lithium does not contribute to the subsequent charge-discharge cycles, resulting in a decrease in discharge capacity (remaining capacity) after repeated cycles.
In this situation, Patent Documents 1 to 6 present the use of various negative electrode active materials prepared by mixing different kinds of carbon materials.

Non-aqueous electrolyte secondary cell containing negative active material including scaly graphite particles and graphite particles coated with amorphous carbon particles and amorphous carbon layer and method of manufacturing the same


A multilayer capacitor comprises a capacitor element body; a first signal terminal electrode, a second signal terminal electrode, and a ground terminal electrode which are arranged on an outer surface of the capacitor element body; and a ground internal electrode and first to third signal internal electrodes which are arranged within the capacitor element body. The ground internal electrode is connected to the ground terminal electrode. The first signal internal electrode is connected to the first signal terminal electrode and opposes the ground internal electrode so as to construct a first capacitor. The second signal internal electrode is connected to the first signal terminal electrode and opposes the ground internal electrode so as to construct a second capacitor. The third signal internal electrode is connected to the second signal terminal electrode and opposes the ground internal electrode so as to construct a third capacitor. The first and second capacitors have respective capacitances different from each other.

1. Field of the Invention
The present invention relates to a multilayer capacitor.
2. Related Background Art
A multilayer capacitor as a measure against noise in a two-line signal path is disclosed in Japanese Patent Application Laid-Open No. 2006-59977. The multilayer capacitor disclosed in Japanese Patent Application Laid-Open No. 2006-59977 comprises a first signal line terminal connected to a first signal line, a second signal line terminal connected to a second signal line, and first and second ground terminals connected to grounding pads, while a first capacitor is constructed between the first signal line terminal and first ground terminal, and a second capacitor is constructed between the second signal line terminal and second ground terminal.


A polarization control system which includes an E-type polarizer and therefore can provide excellent dark state at a wide azimuth and viewing angle. Further, the polarization control system includes a viewing angle control element for controlling a traveling direction of light which has passed through the E-type polarizer and therefore can provide excellent bright state at a wide azimuth and viewing angle. Further a display device is disclosed including such a polarization control system. The polarization control system is a polarization control system including a plurality of polarizers, wherein the polarization control system includes an E-type polarizer and a viewing angle control element, and the viewing angle control element controls a traveling direction of light which has passed through the E-type polarizer.

There are various types (generally, called "display mode") of the liquid crystal display device. A display mode in which a liquid crystal cell is arranged between a pair of polarizers disposed in Cross Nicol arrangement is the most common mode. Such a liquid crystal display device provides black display by disposing a pair of polarizers substantially in Cross-Nicol state (dark state) in the following system. Liquid crystal molecules are aligned substantially vertically to substrates such that the liquid crystal cell has a retardation, or alternatively, the liquid crystal cell has a retardation, but an optic axis azimuth of the cell is substantially parallel to or substantially vertical to a polarization axis azimuth (transmission axis azimuth or absorption axis azimuth) of the polarizers by rotating the liquid crystal molecules in the plane, and thereby the retardation is canceled. Such a system is effective in order to enhance contrast. Accordingly, this system has been applied to liquid crystal display devices in various display modes such as Vertical Alignment (VA) mode and In-plane Switching (IPS) mode.
FIGS. 4A to 7A are views each showing viewing angle characteristics of a cross transmittance in four different polarization control systems (i) to (iv). As mentioned below, the polarization control system (i) includes two O-type polarizers; the polarization control system (ii) further includes a retardation film in addition to the polarization control system (i); the polarization control system (iii) includes two E-type polarizers; and the polarization control system (iv) includes one O-type polarizer and one E-type polarizer. FIG. 4A is a view showing azimuth angle dependency of a cross transmittance at a polar angle of 60° in the respective polarization control systems. FIGS. 5A to 7A are views each showing polar angle dependency of a cross transmittance at azimuth angles of 0°, 45°, and 90° in the respective polarization control systems.
As a polarizer commonly used in the liquid crystal display device, for example, a polarizer prepared by uniaxially stretching a polyvinyl alcohol film to which iodine complex and the like has been adsorbed and aligning the iodine complex (hereinafter, also referred to as "conventional iodine polarizer") is known. If black display is provided using these two conventional iodine polarizers, excellent black display can be obtained in the front direction (at a polar angle of)0°, but light leakage is generated in oblique directions, as shown by (i) in FIG. 4A to 7A. This is because, as mentioned below, the conventional iodine polarizer is a so-called O-type polarizer, and therefore if a transmission axis azimuth of a back surface side-polarizer is not parallel to an absorption axis azimuth of an observation surface side-polarizer in oblique directions (the Cross-Nicol state can not be provided).
In order to solve this problem, a retardation film is conventionally used. That is, the retardation film performs compensation such that also in oblique directions, the transmission axis azimuth of the back surface side-polarizer is apparent parallel to the absorption axis azimuth of the observation surface aide-polarizer (in some display modes, the liquid crystal cell has a retardation in oblique directions, and in such a case, the liquid crystal cell is used as a retardation film). The transmission axis and the absorption axis are fixed in each polarizer, and therefore it is physically impossible to rotate azimuths of these axes. Accordingly, in practice, linearly polarized light (linearly polarized light whose electric field vector oscillation direction (oscillation surface) is parallel to the transmission axis azimuth of the back surface side-polarizer) which has been outputted from the back surface-side polarizer is rotated just by the oscillating direction while its ellipticity is maintained, thereby being converted into linearly polarized light whose electric field vector oscillation direction is parallel to the absorption axis azimuth of the observation surface side-polarizer.
However, a retardation value needed for such conversion varies depending on an observation azimuth and viewing angle (an angle made by line of sight and the normal direction of a screen in the liquid crystal display device, at an intersection of line of sight and the screen of the display device, i.e., an observation direction (angle)). Accordingly, according to the method involving use of the retardation film, as shown by (ii) in FIGS. 4A to 7A, light leakage can be reduced at specific azimuth and viewing angle, but not at every azimuth and viewing angle. In such a point, the method has room for improvement.
For this problem, a method in which a so-called E-type polarizer is used instead of the O-type polarizer, and a method in which an E-type polarizer is used as only one of a pair of polarizers have been proposed (for example, refer to Patent Documents 1 to 3).
Optical characteristics of the O-type polarizer and the E-type polarizer are mentioned below.
According to the conventional iodine polarizer, the stretching direction is an absorption axis and the direction perpendicular to the stretching direction is a transmission axis. Thus, only the absorption axis and the transmission axis of the polarizer in the polarizer plane are often considered. However, it is hardly known that the following point is important, if polarization characteristics of the polarizer, shown for incident light from a direction (oblique direction) other than the normal direction of the polarizer, are considered. That is, it is important which the absorption axis or the transmission axis the polarization axis of the polarizer in the normal direction is, i.e., whether a incident light component whose electric field vector oscillation direction is parallel to the normal direction of the polarizer transmits the polarizer or is absorbed by the polarizer.
The conventional iodine polarizer has a transmission axis in the normal direction of the polarizer, as shown in FIG. 8A. That is, the conventional iodine polarizer satisfies a relationship of Ka>>Kt≈Kz where an imaginary part (also referred to as an "extinction coefficient") of a complex refractive index relative to light oscillating in the absorption axis azimuth in the polarizer plane is defines as Ka, an imaginary part of a complex refractive index relative to light oscillating in the transmission axis azimuth in the polarizer plane is defined as Kt, and an imaginary part of a complex refractive index relative to light oscillating in the normal direction is defined as Kz. This type of polarizer is a so-called O-type polarizer.
A polarizer shown in FIG. 8B is one whose absorption axis is in the normal direction of the element, that is, a polarizer satisfying a relationship of Kz≈Ka>>Kt. This type of polarizer is a so-called E-type polarizer (for example, refer to Patent Documents 1 and 2). The H-type polarizer is known to provide the Cross-Nicol state at a wider azimuth and viewing angle than those in the O-type polarizer, as shown by (iii) in FIGS. 4A to 7A. If the E-type polarizer and the O-type polarizer are used in combination, as shown by (iv) in FIGS. 4A to 7A, the Cross-Nicol state can be provided at a much wider azimuth and viewing angle (for example, refer to Patent Document 3).
The reason why the E-type polarizer can provide the Cross-Nicol state at a wider azimuth and viewing angle than those in the O-type polarizer is mentioned below. If light (electric field of an optical frequency) enters the polarizer from an oblique direction, the light has a component whose electric field vector oscillation direction is parallel to the normal direction of the polarizer. The E-type polarizer has an absorption axis in the normal direction, and therefore it can absorb the component whose electric field vector oscillation direction is parallel to the normal direction of the polarizer if the light enters the E-type polarizer from an oblique direction. In contrast, the O-type polarizer has a transmission axis in the normal direction of the polarizer, and therefore it transmits the component without absorbing it.
Further, the reason why the combination use of the E-type polarizer and the O-type polarizer can provide the Cross-Nicol state at a much wider azimuth and viewing angle is mentioned below. If the same type of two polarizers, i.e., the E-type of two polarizers, or the O-type of two polarizers, are used for providing the Cross-Nicol state, an transmission axis azimuth of one polarizer is not geometrically parallel to an absorption axis azimuth of the other polarizer when an observation point is in an oblique direction at an azimuth other than the polarization axis azimuth. As a result, light leakage is generated. In contrast, if the E-type polarizer and the O-type polarizer are used in combination, the transmission axis azimuth of the E-type polarizer is parallel to the absorption axis azimuth of the O-type polarizer when an observation point is in the oblique direction. Therefore, light leakage is not generated.
This is mentioned below in more detail with reference to FIGS. 9A, 9B, 10A, and 10B.
FIG. 9A is a planar view schematically showing an arrangement relationship among respective polarization axes when an observation point is in the normal direction of polarizers, in the case that both of a polarizer (back surface side-polarizer) and an analyzer (observation surface side-polarizer) are O-type polarizers and disposed in Cross-Nicol arrangement. FIG. 9B is a plane view schematically showing an arrangement relationship among the respective polarization axes in the configuration shown in FIG. 9A, when an observation point is at a viewing angle tilted at an azimuth of 45° (an azimuth at 45° relative to both of the absorption axis azimuth and the transmission axis azimuth). In this case, as shown in FIG. 9A, the Cross-Nicol state is provided in the normal direction of the polarizer (a transmission axis azimuth 11 of the polarizer is parallel to an absorption axis azimuth 13 of the analyzer). However, as shown in FIG. 9B, the Cross-Nicol state is not provided in an oblique direction (the transmission axis azimuth 11 of the polarizer is not parallel to the absorption axis azimuth 13 of the analyzer). Accordingly, it is found that in the oblique direction, linearly polarized light which has passed through the polarizer is not absorbed by the analyzer.
FIG. 10A is a planar view schematically showing an arrangement relationship of respective polarization axes when an observation point is in the normal direction of polarizers, in the case that the E-type polarizer is used as the polarizer and the O-type polarizer is used as the analyzer. FIG. 10B is a planar view schematically showing an arrangement relationship among the respective polarization axes in the configuration shown in FIG. 10A, when an observation point is at a viewing angle tilted at an azimuth of 45°. In this case, the Cross-Nicol state is provided not only in the normal direction of the polarizers, as shown in FIG. 10A, but also in the oblique direction, as shown in FIG. 10B (the transmission axis azimuth 11 of the polarizer is parallel to the absorption axis azimuth 13 of the analyzer). Although not shown in drawings, the Cross-Nicol state is maintained in the case that an observation point is at a viewing angle tilted at an azimuth other than the azimuth of 45°. That is, if the E-type polarizer and the O-type polarizer are used in combination, the Cross-Nicol state can be provided at every azimuth and viewing angle, in principle. As mentioned above, the E-type polarizer and the O-type polarizer are used in combination, the Cross-Nicol state can be provided at a wider azimuth and viewing angle.
[Patent Document 1]
    Japanese Kohyo Publication No. 2001-504238[Patent Document 2]    Japanese Kokai Publication No. 2001-242320[Patent Document 3]    Japanese Kohyo Publication No. 2003-532141

Polarization control system and display device


Power consumption is reduced in a semiconductor integrated circuit. In a conventional flip-flop circuit, there is a transistor between one side current electrode of a PMOS transistor (PTr7) and an node (V0) of a power source. This transistor is deleted and one side current electrode of (PTr7) is connected to an node (D2). In a similar manner, one side current electrode of (PTr13) is connected to an node (D13), one side current electrode of an NMOS transistor (NTr6) is connected to an node (D6), and one side current electrode of (NTr14) is connected to an node (D12). Thus, by deleting transistors, the capacity of transistors which are to be driven by a clock signal is reduced, and therefore, power consumption is reduced.

1. Field of the Invention
The present invention relates to semiconductor integrated circuits and those which are used as memory circuits, and more particularly, to semiconductor integrated circuits which reduce power consumption.
2. Description of the Prior Art
A memory circuit (usually, a flip-flop (hereinafter "FF")) is essential as a circuit which is used in a currently available semiconductor integrated circuit (LSI). FIGS. 11A and 11B are views showing an example of a structure of an FF which is used in a conventional semiconductor integrated circuit, as it is cut along a line A-A'. FIG. 11 is a general view showing the respective positions of FIGS. 11A and 11B. FIG. 11A shows a master side of the flip-flop circuit, while FIG. 11B shows a slave side of the flip-flop circuit. In FIGS. 11A and 11B, PTrX (X is an integer from 1 to 17) denotes a PMOS transistor, NTrX (X is an integer from 1 to 17) denotes an NMOS transistor, DX (X is an integer from 1 to 19) denotes a node, Q denotes an output, and *Q denotes an inverted output of the output Q. FIGS. 11A and 11B are contiguous to each other at the line A-A'. In FIGS. 11A and 11B, nodes V0, C0, D3, D5 and G0 are electrically connected to each other. The nodes V0 and V1 are electrically connected to power sources. The node C0 receives a clock signal (CLOCL). The nodes G0 and G1 are each grounded. The node D0 receives data (DATA).
A PMOS transistor is characterized in that it is turned on when the signal level at the gate is "L" level so that a current is conducted between a source electrode and a drain electrode from a high signal level side to a low signal level side. Further, a PMOS transistor is turned off when the signal level at the gate is "H" level, and a current is shut off between the source electrode and the drain electrode. Conversely, an NMOS transistor is characterized in that it is turned on when the signal level at the gate is "H" level so that a current is conducted between a source electrode and a drain electrode from a high signal level side to a low signal level side. Further, an NMOS transistor is turned off when the signal level at the gate is "L" level, and a current is shut off between the source electrode and the drain electrode. If a current is conducted and shut off between the source electrode and the drain electrode as described above depending on the signal level at the gate, a transistor is operating normally.
Next, an operation of the FF shown in FIGS. 11A and 11B will be described. It is assumed that data and the clock signal are both at "L" level. Since the clock signal is at "L" level, PTr2, PTr6, PTr10 and PTr12 are turned on, while NTr5, NTr7, NTr11 and NTr15 are turned off. Since the data are at "L" level, PTr1 and PTr7 are turned on, while NTr1 and NTr8 are turned off. As a result, the nodes D2, D7, D13 and D16 are at "H" level, while the nodes D6, D8, D12 and D17 are at "L" level. The node D1 is at "H" level.
Since PTr7 is already on, the circuit is conducted between the power source and the node D5. Hence, the node D5 is at "H" level. Since the node D1 is at "H" level, PTr3 is turned off and NTr2 is turned on.
Since the node D5 is at "H" level, PTr4 is turned off, while NTr3 and NTr4 are turned on. Further, PTr15 is turned off while NTr14 is turned on. Since NTr3 is turned on in addition to NTr2 which is already on, the circuit is conducted between the ground and the node D3. Hence, the node D3 is at "L" level.
As the node D3 is at "L" level, PTr5 is turned on, while NTr6 and NTr9 are turned off. Further, PTr9 is turned on and NTr10 is turned off.
Next, it is assumed that only the clock signal changes from "L" level to "H" level. As this happens, since the clock signal is at "H" level, PTr2, PTr6, PTr10 and PTr12 are turned off, and NTr5, NTr7, NTr11 and NTr15 are turned on.
Since NTr5 is turned on in addition to NTr4 which is already on, the node D3 which is already at "L" level remains at "L" level. As the node D3 stays at "L" level, the circuit is shut off between the node D5 and the ground, so that the node D5 is kept at "H" level.
Since NTr15 is turned on in addition to NTr14 which is already on, the node D14 is at "L" level. As a result, PTr8, PTr11 and PTr17 are turned on, and NTr12 and NTr17 are turned off. Hence, the output *Q is at "H" level.
Since NTr11 is turned on in addition to the node D13 which is already at "H" level, the node D11 is at "H" level. As the node D11 is at "H" level, PTr13, PTr14 and PTr16 are turned off, while NTr13 and NTr16 are turned on. Hence, the output Q is at "L" level.
Now, it is assumed that only the clock signal changes from "H" level to "L" level while the data remain at "L" level. As this happens, although the nodes D7 and D16 change to "H" level, the nodes D3, D5, D1 and D14 do not change but keep the current operation results ("H" level or "L" level at each node) described above. If the data remain unchanged as in this example, even though the clock signal changes, internal data do not change. The data can be held in this manner.
In a case where only the clock signal changes while the data remain at "H" level as well, although the signal levels at the nodes D3, D5, D11 and D14 are opposite to those described above, similar operation results are maintained.
In an actual operation of the circuit, however, the data do not necessarily maintain a constant signal level such as "H" level or "L" level. Although the signal level of the data appropriately changes while the circuit is in operation, the signal level of the data as it is currently in response to a change in the clock signal is maintained, as described above.
As described above, a function of temporarily maintaining a condition is realized by means of a change in the data and the clock signal, turning on and off of the transistors which are connected to the data and the clock signal, operations of the transistors which are turned on and off depending on "H" level and "L" level at the nodes which are connected to the transistors, etc. When such a function is realized, at gates which operate in synchronization to the clock signal within PTr2, PTr6, PTr10, PTr12, NTr5, NTr7, NTr11 and NTr15, capacities associated with the gates are charged or discharged. That is, a current is expended. Usually, a clock signal operates cyclically and most frequently in a synchronization type circuit, and therefore, power consumption which is equivalent to the eight transistors is very frequent.
Meanwhile, an integrated circuit device has an increasingly sophisticated performance and function in recent years. In a circuit which uses a number of memory circuit elements such as a microprocessor in accordance with this, power consumption is increasingly large. On the other hand, products such as recent type information equipment are desired to use less electric power while maintaining an advanced function.
In addition, a shorter research and development period is demanded. While an automatic design method such as a logic synthesizing system is widely adopted, with respect to supply of a clock signal to an FF which does not require an operation, a method adopted is to stop the clock signal by means of a control signal dandy a logic circuit. However, this method requires using a control signal and a circuit separately in order to realize this, and therefore, there are disadvantages such as an increased number of interconnectons, more difficulty in designing timing, and a longer period for designing. Thus, an element and a structure of an integrated circuit device which inherently expenses less power are urgently needed.