A high pressure oxygen torch system for cutting steel is disclosed. The system includes a high pressure nozzle which operates at oxygen pressures of approximately 20 bar and above. The system also includes a pressure regulating valve and a mass flow control valve which maintain uniform pressure within close tolerances. The oxygen torch system may be used in continuous steel casting operations to economically, reliably and quickly cut hot and cold strands.

The economic and fast torch cutting of different thicknesses of steel with oxygen has had an unchanged importance for more than 60 years, because of the meaning of continuous casting of steel it became an even more important development work in research and in practice. Roger S. Babcock explains in his patent U.S. Pat. No. 2,521,199 according to application dated Jun. 14, 1947 his conclusions and suggestions for economic fast cutting with high pressures of 450 PSI (31.7 bar) to 600 PSI (35.2 bar) and divergent nozzles. Many of these conclusions are still valid, however, the high-oxygen cutting was not accepted in the fields in which approx. 15 bar nozzle supply pressure=working pressure is used today, even though there have been numerous developments and practical tests because of the possible advantages. A proper, permanent, reliable operation with gaseous high pressure oxygen of 15 to over 100 bar working pressure did not seem possible.
Although the outlet pressures and the jet speeds during high-pressure oxygen cutting were known and could be influenced, the operational influences and circumstances were not considered, as Roger S. Babcock showed poorly in FIG. 1 of his a.m. patent. A pressure and flow control of the cutting oxygen by a liquid oxygen pump in front of an evaporator (2) with a receptacle behind also used for pressure measurement and a pressure switch that turns the pump motor on and off was absolutely insufficient. In addition there was only a shutoff valve for turning the cutting oxygen on and off. With the described supply and pipe system and its very general definition of nozzle measurements, good cutting results were achieved under test circumstances, however, not permanently in practical operation. This also applies for all known equipment for high pressure oxygen-torch cutting, apart from torch cutting with liquid oxygen where minimum pressure deviations are of minor influence.

Continuous steel casting plant with following cross-cutting and slitting equipment for oxy-torch cutting of hot and cold strands


There is provided an information processing apparatus including a rewrite frequency management section configured to manage a rewrite frequency of a page included in a nonvolatile primary storage apparatus having an upper limit in the rewrite frequency, and a data processing section configured, when an instruction for writing write data to a predetermined page is issued and a rewrite frequency of the predetermined page reaches a threshold value that is less than the upper limit of the rewrite frequency of the primary storage apparatus, to write the write data to another page different from the predetermined page, the other page storing no effective data and having a rewrite frequency that does not reach the threshold value.

The present technology relates to an information processing apparatus and method and a program, and more particularly to an information processing apparatus and method and a program for enabling the use efficiency of a nonvolatile memory having an upper limit in a rewrite frequency to be improved.
In the related art, technology related to memory management for appropriately using each area of a memory in a nonvolatile memory having an upper limit in a rewrite frequency has been proposed.
For example, as the above-described technology, there is technology for storing a page table including mapping information of virtual and physical addresses on a memory and managing the memory using the page table (for example, see Japanese Unexamined Patent Application Publication No. 2010-186477).
In this technology, the mapping information includes write frequency information of each page on the memory and a data storage position is managed based on the write frequency information. Specifically, when the write frequency for a page on the memory has reached a durability limit, data of the page is moved to another page and the mapping information is updated according to the movement.

Information processing apparatus, method, and program for improving use efficiency of a storage apparatus


In a portable telephone which transmits and receives data having at least one of a voice signal and an image datum which are radio signals, the controlling device controls an amplifier so that a user can hear, at a first state that an ear is not near to a speaker, the voice from the speaker when the data from a base station includes a discrimination datum which represents the image datum. The controlling device controls the amplifier so that the user can hear, at a second state that the ear is near to the speaker, the voice from the speaker when the data from the base station does not include the discrimination datum which represents the image datum.

This invention relates to a portable telephone which transmits data having at least one of a voice signal and an image datum which are radio signals to a communicating device through a base station, and which receives the data having at least one of the voice signal and the image datum from the communicating device through the base station.
Recently, image transmission becomes important in accordance with development of communication technology. Therefore, various terminal devices which can execute image transmission are provided. In addition, a conventional portable telephone of the type comprises a body, an antenna, an operation device, a speaker, a display device, a microphone, a camera, a transmitting and receiving device, a controlling device, and amplifiers. The antenna is attached to the body. The operation device, the speaker, the display device, the microphone, and the camera are mounted on the body.
Also, according to development of communication technology, facsimile service that  where a facsimile device requests and receives a necessary datum is executed. Also, push-phone service such as preengagement  pre-engagement of an airline ticket and remainder inquiry of a bank deposit is  are executed. In these services, a user transmits, by operating ten keys of a telephone, datum of a predetermined telephone number to one of these service systems to connect the telephone to the one of these service systems. Thereafter, the user operates the ten keys of the telephone, in response to a guidance message, to transmit data of  such as a number (BOX number) representing a datum which is needs  needed for a DTMF signal, an account number, and a preengagement time. Thereby, the user can obtain data.
However, in the portable telephone, there is a problem that facility of operation is wrong. This is because, since the handset of the portable telephone is integrated with ten keys, the user cups the portable telephone to the user's ear when the user hear  hears the guidance messages and the user disconnect  removes the portable telephone from the user's ear when the user operates the ten keys. Also, in the portable telephone, there is another problem that the user is hardly able to hear a voice from the speaker when the user disconnect  removes the portable telephone from the user's ear to operate the ten keys. In addition, in the portable telephone, there is still another problem that it is needs to set, by  such as by a switching circuit, a hands free mode in case that the user executes conservation while the user see  sees image data which is displayed.

Portable telephone capable of increasing facility of operation


A vibration-based authentication method for an access control system includes: collecting vibration signals generated by a built-in vibration motor in an authentication device; filtering, denoising, and performing endpoint segmentation on the collected vibration signals, and extracting vibration signals containing effective touch; performing an alignment on the segmented vibration signals; performing a fast Fourier transform on the aligned vibration signals to obtain frequency-domain data, extracting frequency-domain features obtained after alignment and features obtained before alignment to construct a training data set, and storing the training data set in a database of the authentication device; using a new unlock signal generated when a user touches the authentication device as test data, and processing the test data to obtain test data containing effective touch; and matching and classifying the test data containing effective touch with the training data set by using a machine learning classification model, to obtain an authentication result.

With the development of science and technology, intelligent access control is widely used, for example, to allow authorized personnel or vehicles to enter or exit communities and parking lots, to improve security and management convenience. Integrated circuit (IC) cards are typically used as access control cards in current intelligent access control. However, IC cards have poor security performance and can be easily copied. If an IC card is lost or transferred to an unauthorized person, it may be used to make many unauthorized copies, which seriously undermines the security of the communities that uses the IC card for access control.
Traditional access control systems are typically achieved through, for example, smart card identification, password identification, key unlocking, application (APP) intelligent control, and fingerprint identification. Physical keys in some cases can be inconvenient, for example, it could be misplaced or left at home. Password identification also comes with burdens to users, such as it requires users to remember a long string of codes and users need to enter them repeatedly. APP intelligent control and fingerprint identification are sometimes limited due to high costs and other reasons.
Thus, a method that improves the existing door-opening authentication solutions with higher security and lower costs is needed.

Vibration-based authentication method for access control system


A method for producing a moldable object having a hollow plastic component and a single-piece plastic stanchion is provided. The method includes molding the single-piece plastic stanchion in a first mold. The molded stanchion includes a first substantially-closed end and a second substantially-open end, and a cap joined with the second end via a living-hinge, enabling the cap to assume and maintain a position, such that the second end becomes substantially covered. The method also includes flexing the living-hinge, wherein the cap assumes and maintains the position such that the second end is substantially covered. The method additionally includes arranging the single-piece stanchion relative to a second mold after the second end is substantially-covered via the cap. Furthermore, the method includes molding the hollow plastic component in the second mold, such that the single-piece stanchion is fixedly retained by the hollow plastic component.

Various objects may be manufactured via molding processes. Molding is often employed to produce objects from various polymers and other types of plastic materials. Common molding processes include blow molding and injection molding.
Blow molding and injection molding both typically employ heated thermoplastic materials to conform to a shape created in a specially designed tool, or mold cavity. Blow molding is generally employed to produce hollow objects of relatively simple shape with loosely controlled thickness. Injection molding, on the other hand, is generally employed to produce objects of more complex shape, and is frequently employed where an object with more precise dimensional control is required.


The present invention provides a novel method for producing hexafluoropropylene oxide, which can attain a high HFPO selectivity without using a phase transfer catalyst. Hexafluoropropylene (HFP), a water-soluble and aprotic organic solvent, and an aqueous solution of an oxidizing agent are introduced into a small space, thereby bringing into contact with each other and reacting hexafluoropropylene with the oxidizing agent to obtain hexafluoropropylene oxide (HFPO).

Hexafluoropropylene oxide is an important compound in the production of fluorine-containing compounds, since it is used, for example, as a raw material for perfluorovinyl ether. An oligomer of the hexafluoropropylene oxide is utilized as a lubricating oil, a heating medium and the like.
There has hitherto been developed, as a method for producing hexafluoropropylene oxide (hereinafter also referred to as HFPO), a method in which HFPO is obtained by oxidation of hexafluoropropyelene (hereinafter also referred to as HFP) using a hypochlorite as an oxidizing agent.
For example, there has been known method in which HFP is oxidized by a hypochlorite in a two phase system of an aqueous phase and an organic phase in the presence of a phase transfer catalyst such as a quaternary ammonium salt or a quaternary phosphonium salt to obtain HFPO (see Patent Literatures 1-3).
It has also been known that HEPO is produced from HEP when an aqueous solution of a hypochlorite is used in the presence of an aprotic solvent such as acetonitrile or diglyme.

Method for producing hexafluoropropylene oxide


Balancing a workload based on commitments to projects includes monitoring messages in a collaboration system, the messages representing correspondences between users of the collaboration system, selecting a number of the users associated with the collaboration system to form a group of users, retrieving the messages from each of the users in the group of users, analyzing data associated with the messages to determine which of the messages relate to at least one project, and executing, based on a threshold, at least one action to optimize a workload for at least one user in the group of users for the at least one project.

The present invention relates to balancing a workload, and more specifically, to balancing a workload based on commitments to projects.
A collaboration system includes a number of systems. The collaboration system may include systems such as electronic mail (email) systems, instant messaging (IM) systems, and social network systems. The collaborative system may further include a collaborative workspace, development tools and/or document authoring tools. The systems of the collaboration system are used to connect users to information in a logical and organized manner to enable sharing and processing of the information between the users in the form of messages. The messages may be displayed to the users via an inbox, a wall, an activity stream, a timeline, a profile, or other forms.

INTERNATIONAL BUSINESS MACHINES CORPORATION


A device for actuating the unloading mat in switching machines of a type comprising elements capable of engaging a supporting roller for the mat, so as to control its rotation and effect the unloading of the transported object during the forward motion of the trolley holding the mat. The elements include a rack capable of engaging a sprocket solidly affixed to the shaft of one of the mat rollers, and the rack is mounted on a support subjected to the action of eccentric devices designed to govern the shifts from a position of rest to one of engaging with the sprocket. The rack is mounted on the support with the capability of performing small shifts against elastic devices, along a direction parallel to the direction of the trolley's forward motion.

The known switching equipment comprises a number of mobile trolleys moving along a fixed path, pulled for example by chains or the like, each fitted with a rotating mat which simultaneously constitutes a carrying plane for the objects to be transported, and a device designed to unload it when passing certain pre-established collecting points.
This equipment is generally controlled by a computer and coupled to certain coding devices which assign to each of the objects, at the time of their loading on the machine, a certain trolley and exit gate and subsequently govern the actuation of the mat when it passes opposite the exit assigned to the loaded object.
Depending on the type of equipment and the user's requirements, the unloading mat may be actuated by motor devices mounted on the trolleys, each connected and coupled to an individual mat, or by mechanical means arranged along the path, so as to engage mechanical mat controlling devices installed on each trolley.
For example, one of these devices is described in the Italian patent No. 1.254.117 by the same applicant, to which reference is made for further details relating to this type of equipment.
As mentioned above, the means controlling the rotation of the mat may be of various kinds, for example devices fitted with cams that engage certain elements attached to the mat to control its rotation, or various mechanical devices engaging the sprockets, rollers or similar elements affixed to the shaft of one of the rollers holding the mat.

System for actuating the unloading mat in switching machines


A pitch control method and system of a symmetrical-airfoil vertical axis wind turbine collects data by an anemometer, an anemoscope and an angle sensor, outputs an optimum pitch angle based on a control law of a pitch angle and controls the pitch angle to be the optimum pitch angle through a pitch control actuator. In addition to input variables of the control law such as a wind velocity vin and a blade azimuth angle Ψ, constants such as a rotation radius R, a rotation velocity Ω of the blade and aerodynamic coefficients c1, c2 and c3 are also related. A Reynolds number has little influence on three aerodynamic coefficients c1, c2 and c3. The pitch actuator controls the adjustment rods to realize the automatic pitch control of the blades. An expression of the control law of the pitch is concise, the calculation time is short, and a response speed is fast.

A rotation shaft of a wind wheel of a vertical axis wind turbine is perpendicular to the ground or an air flow, and there is no need to make the wind wheel face the wind when a wind direction changes. Compared with a horizontal axis wind turbine, the vertical axis wind turbine not only has a simple structure, but also reduces a gyroscope force of the wind wheel when the wind wheel faces the wind. However, for the vertical axis wind turbine, there are shortcomings such as poor self-starting ability and low wind energy utilization ratio. The pitch control is an effective measure to optimize the aerodynamic performance and wind energy utilization ratio of the vertical axis wind turbine.
In the prior art, there are a large number of pitch control methods for horizontal axis wind turbines. However, because an operation mode of the horizontal axis wind turbine is different from that of the vertical axis wind turbine, the large number of pitch control methods cannot be directly applied to the vertical axis wind turbine. At present, pitch control methods used by the vertical axis wind turbine mainly include: (1) adjusting based on a periodically variable pitch angle which is provided by an eccentric mechanism; (2) controlling in real-time based on an optimal pitch angle determined by numerical simulation and optimization algorithms. An adjustment of the eccentric mechanism usually has poor automaticity. For the real-time adjustment by the optimization algorithm, if an iterative algorithm is complicated, a lag of the pitch control will occur easily; and the real-time adjustment is mostly set according to wind conditions under a specific Reynolds number, which lacks universality.
The present patent application with publication number CN102889177A discloses a variable pitch angle structure of an H-type vertical axis wind power generation system and a control method thereof, which improves the self-starting ability and the tangential force of the vertical axis wind turbine by collecting a wind direction signal and a wind velocity signal as well as blade position signals in real time, comparing the wind velocity and a predetermined tangential wind velocity, and providing a result of pitch control with reference to the wind direction. However, the control logic of the control method is relatively complicated, and the control method has a long response time and a lag problem existing in the pitch control.

Pitch control method and system of symmetrical-airfoil vertical axis wind turbine

Anhui University of Science and Technology


A brazing ring is provided and includes ring material including an aluminum-zinc-silicon alloy having a first melting point and flux material contained within the ring material having a second melting point, which is substantially lower than the first melting point, the ring material being formed such that the flux material is exposed outwardly to a heat source and such that, upon heating, flux material melts before the ring material.

The subject matter disclosed herein relates to an autobrazing system and, more particularly, to an autobrazing system having a brazing ring.
Round tube and plate fin heat exchangers (RTPF) used in air conditioners and heat pumps generally include a series of long "U"-shaped tubes inserted into a densely arranged pack of fins. The formed tubes, called hairpins, are then circuited (joined) to each other at the opposite end by brazed-in-place return bends. At low production volumes, the tubes are brazed manually. However, such manual brazing process is operator dependant, susceptible to a higher defect rate and unacceptable in the high volume production environments. Therefore, there is cost justification to automate the brazing process when the production rates become sufficiently high.
Since conventional RTPF heat exchangers typically have copper tubes and aluminum fins, the associated brazing process is forgiving due to a wide temperature window between melting points of brazing material and copper tubes. Brazing automation for aluminum tubes and aluminum fins, on the other hand, is new and requires relatively high quality and high precision brazing to assure a leak/defect rate that is comparable to copper/aluminum RTPFs.


A wafer bevel processing apparatus comprises a plurality of rollers for rotatably supporting a wafer, first process roller, a second process roller, and a process tape extending between the first process roller and the second process roller. The first and second process rollers are positioned to cause the process tape to contact an edge of the wafer when the wafer is loaded into the processing apparatus. The process tape is configured to frictionally prepare the edge where contact occurs with the process tape.

1. Field of the Invention
The present invention relates generally to semiconductor wafer cleaning and preparation, and more particularly, to a method and apparatus for cleaning or preparing wafer edges after various fabrication operations.
2. Description of the Related Art
In the field of semiconductor chip fabrication processing, it is well known that there is a need to clean a semiconductor substrate wafer where a fabrication operation has been performed that leaves unwanted residuals on the surface of the wafer. Examples of such fabrication operations include plasma etching, material depositions and chemical mechanical planarization (CMP). CMP is commonly performed on both dielectric materials and conductive materials such as oxide and copper. If particles or films are left on the surface of the wafer without removing them, the unwanted residual particles or material may cause defects on the wafer surface and inappropriate interactions between metallization features or with subsequent lithography operations. Such defects may cause devices on the wafer to become inoperable. It is therefore necessary to clean the wafer after fabrication operations that leave unwanted residuals on the surface of the wafer.
A common fabrication operation includes the deposition of metals over previously formed dielectric features, which is commonly done in damascene and dual-damascene processes. As is generally defined, damascene and dual-damascene processes include the formation of features, such as interconnect lines and vias into dielectric materials, filling the dielectric features with conductive material, e.g., such as copper, and then performing CMP operations to remove the excess metallization material. The metal material can be formed over the wafer using various techniques, such as, for example, deposition, electroplating, sputtering, and the like. In either case, the formation of metal material may generate excess beading around the periphery of the wafer. It is also a common operation to perform standard cleaning operations after such metal deposition operations, to ensure that the excess material, debris, and contaminants are removed from the wafer before engaging in further processing.
Standard brush scrubbing techniques often fail to clean and remove the metal edge beading and loose particles from wafer edge surfaces including the bevel edge and exclusion zone which extends from about 1 to 3 millimeters from the bevel. Although sufficient center cleaning is performed using roller brushes, not enough mechanical scrubbing is performed at the edge. Consequently, unwanted material may remain even after repeated conventional brush cleaning.
FIG. 1 shows an exemplary prior art wafer brush-box 50. The brush-box 50 includes a drive roller 61 that rotates in a direction 62 that drives the wafer 12 in a direction 63, and a stator roller 68 that forces the wafer into engagement with the circumferential groove 70 of drive roller 61. Edge cleaner 65 cleans the bevel 74 of the wafer 12. Edge cleaner 65 may rotate in the direction 67 at a different speed than the drive roller 61 to provide some scrubbing action between edge cleaner 65 and wafer bevel 74. Edge cleaner 65 comprises a grooved roller having a soft compliant material lining the groove for conforming to the edge profile and removing debris. An exemplary edge cleaner of this type is shown in U.S. Pat. No. 6,334,229, which issued to Moinpour et al. on Jan. 1, 2002. Stationary, U-shaped scrub brush edge cleaners are also known.
Unfortunately, prior art wafer edge cleaners must be replaced periodically, increasing operating costs. Furthermore, the prior art devices have a small area of contact between the cleaning implement and the wafer. The small area of contact results in reduced efficiency in cleaning, requiring longer cleaning times.
In view of the foregoing, there exists an unmet need for a substrate edge cleaning system and method that provides a less costly, more effective and efficient alternative to current technologies.

Process tape for cleaning or processing the edge of a semiconductor wafer


A solid-state imaging apparatus comprising a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels, reading out parts, each comprising a reading out electrode, wherein the reading out electrode and at least one of transfer electrodes adjoining to the reading out electrode are adjoining to same photo electric conversion element is characterized by that electric charge accumulated in each photo electric conversion element is transferred by every other line of vertical electric charge transfer channels in the vertical direction. The solid-state imaging apparatus can prevent color mixture even when the inter-VCCD blooming is occurred.

A) Field of the Invention
This invention relates to a solid state imaging apparatus and more specifically to a driving method of a solid state imaging apparatus.
B) Description of the Related Art
FIG. 5 is a schematic plan view of a conventional solid state imaging apparatus 51.
The solid state imaging apparatus 51 is consisted of a light receiving region 52 including a multiplicity of photo electric conversion elements 52 and vertical electric charge transfer devices (vertical charge coupled devices: VCCD) 64 for transferring electric charges generated in the photo electric conversion elements in a vertical direction, a horizontal electric charge transfer device (horizontal charge coupled device: HCCD) 73, and an output amplifier 74.
The light receiving region 64 of the imaging device to which a pixel interleaved array CCD (PIACCD) is applied as shown in the drawing has the multiplicity of the photo electric conversion elements 52 arranged in so-called pixel interleaved arrangement. Between columns of the photo electric conversion elements 54, the vertical electric charge transfer device 64 that reads out electric charges generated in the photo electric conversion elements 54 and transfers them in the vertical direction is placed by sewing spaces between the photo electric conversion elements to the vertical direction. Winding transfer channels are formed in spaces formed by the pixel interleaved arrangement, and adjacent transfer channels are going away from each other via the photo electric conversion element 52 and coming closer to each other via a channel stop region 53. For example, the details of the pixel interleaved arrangement can be found in Japanese Laid-Open Patent Hei10-136391 and Tetsuo Yamada, et al, February, 2000, "A Progressive Scan CCD Imager for DSC Applications", ISSCC Digest of Technical Papers, Page 110 to 111.
The vertical electric charge transfer device 64 is consisted of the vertical transfer channel 54 shown in FIGS. 6A and in 6B and transfer electrodes 16a and 16b which are formed over the vertical transfer channel 54 via an insulating film 10a and wobbling the photo electric conversion elements 52 to the horizontal direction.
FIG. 6A is an enlarged plan view showing a part of the light receiving region 52 in the conventional solid-state imaging apparatus 51. FIG. 6B is an enlarged cross sectional view showing the conventional solid-state imaging apparatus 51 cut across a broken line A-B in FIG. 6A.
Each of the vertical transfer channel 54 is formed corresponding to each row of the photo electric conversion elements 52, and transfers the signal electric charges read out via a reading-out gate channel region 51c formed adjoining to each photo electric conversion element 52 to the vertical direction. A channel stop region 53 is positioned adjoining to the vertical transfer channel 54 on the opposite side of the reading-out gate channel region 51c. Moreover, the transfer electrodes 56 (the first layer poly-silicon electrode 56a and the second layer poly-silicon 56b) are formed over the vertical transfer channel 54 via the insulating film 60a. Furthermore, at the cross section of this part, only the second layer poly-silicon electrode 56b is positioned over the vertical transfer channel 54. Further, the conventional solid-state imaging apparatus 51 has a structure wherein the two vertical transfer channels 54 are adjoining via the channel stop regions 53.
During a reading-out period, the signal charges generated by the photo electric conversion elements (pixel) 52 are read out to the vertical transfer channels by impressing a high level voltage (VH) to the first layer poly-silicon electrode 56b (φV1) or 56d (φV3) equipped on the reading-out gate channel region (reading-out part) 51c.
Thereafter, during a transfer period, the signal charges are transferred to the HCCD 73 by sequentially impressing a mid-level pulse (VM) or a low-level pulse (VL) to the transfer electrodes 56a to 56d. A horizontal transfer of the electric charges by the HCCD 73 is executed by the two-phase drive with HM/HL pulses during a period between the transfer operations of the VCCD 64 in the transfer period.
FIG. 7 shows electric potentials between a broken line E-F in FIG. 6B. An overflow drain that discharges an excessive signal electric charge of the photo electric conversion elements 52 is formed by adding an inverse bias on an n-type substrate 51a to form an appropriate electric potential barrier between the photo electric conversion element 52 and the n-type substrate 51a.
In the drawing, the electric potential indicated with a solid line is in a condition that the electric charges are accumulated in the photo electric conversion element 52. Since a low voltage (VM or VL) is impressed on the electrode 56b, a reading part 51c is closed, and the accumulated signal charges are not read out to the vertical transfer channel 54.
In the drawing, the electric potential indicated with a dashed line is in a condition that a high voltage (VH) is impressed on the electrode 56b, and the electric potential barrier to the vertical transfer channel 54 from the photo electric conversion elements 52 is eliminated by impressing a sufficient high voltage, and all the electric charges will move to the vertical transfer channel 54. Moreover, two vertical transfer channels 54 which are adjacent via the channel stop region 53 become high electric potential, although the channel stop region 53 divides them. Since the signal electric charges are accumulated in the vertical transfer channel 54 which is adjacent to the reading part 51c at the reading-out period, the signal charges that can be accumulated in the vertical channel 54 in terms of electric potential will not exceed the electric potential of the channel stop region 53.
FIG. 8 is an enlarged plan view showing a part enclosed with a double short-dashed line in FIG. 6A. In the drawing, S2 indicates a region of a channel formed by the electrode 56b at the reading-out period. An accumulation capacity at the reading-out period is decided approximately by a difference φa between the electric potential of the vertical transfer channel 54 that is adjoining to the reading part 51c shown in FIG. 7 and the electric potential barrier of the channel stop region 53 and an area of the S2 and a static capacity for the area per unit (the maximum accumulation capacity equals to or approximately equals to αS2φa, when α is the static capacity for the area per unit).
In a case that this maximum accumulation capacity is smaller than the maximum accumulation capacity of the photo electric conversion element 52, the signal electric charges flow into an adjacent vertical transfer channel 54m over the electric potential barrier of the channel stop region 53, and it causes a blooming phenomenon that will deteriorate an image of a blight part as the solid-state imaging apparatus. That is, the dynamic range will be lost as a reduction of the dealing signal amount.
FIG. 9A to FIG. 9C are diagrams for explaining a conventional driving method of all pixel reading when electric charges are read out from the photo electric conversion elements 52 to the vertical transfer channel 54. In the drawing, a white circle represent an electric charge, and each electric charge corresponds to one of colors represented by letters "R, G, B" placed inside the circle. Moreover, a black painted part of the vertical transfer channel shows a state of a high electric potential when the black painted part can accumulate electric charges.
FIG. 9A shows an initial condition, each photo electric conversion element 52 accumulates electric signal charge corresponding either one of "R, G, B". From the initial condition, the electric charges (G signals) stored in the photo electric conversion elements 52 are read out to the vertical transfer channel 54 by impressing high level voltage (VH) to φV1 as shown in FIG. 9B. At this time, the electric charges may flow into adjacent vertical transfer channel 54 over a potential barrier of the channel stop region 53. Thereafter, the electric charges (R signals and B signals) stored in the photo electric conversion elements 52 are read out to the vertical transfer channel 54 by impressing high level voltage (VH) to φV3 as shown in FIG. 9C. At this time also, the electric charges may flow into adjacent vertical transfer channel 54 over a potential barrier of the channel stop region 53. Therefore, this inter-VCCD blooming phenomenon causes color mixture and, as a result of that, an image in a light part will be extremely deteriorated.

This patent is subject to a terminal disclaimer.

Solid state imaging apparatus and its driving method


Processor interrupt determination procedures are described. In an implementation, one or more computer-readable media comprise instructions that are executable by a computer to determine, based on a performance goal, which of a plurality of processors is to be targeted by a device that is to perform an input/output operation when an interrupt message is discovered that is from the device and that targets the determined processor. The interrupt message is communicated to the device to indicate availability of the determined processor for use by the device. When an interrupt message is discovered that is from the device and that targets an alternative processor near the determined processor when compared with other processors in the plurality of processors, the interrupt message that targets the alternative processor is communicated to the device to indicate availability of the alternative processor for use by the device.

Devices associated with a computer may target a processor with a message to communicate the processor information. For example, input/output device may signal the processor to inform the processor that an operation has been completed by the input/output device. However, such communication may become inefficient when the computer includes a multitude of processors, when processors are located in different physical localities and so on.


There is provided a treatment device for disinfecting a fluid being configured as a conduit for conveying a flow of fluid to be treated, said device being toroidal-shaped with an inner concave parabolic surface, wherein the device is provided with apertures extending from the outer to the inner surface of the toroidal-shaped device; one or more UV LED(s) provided in the apertures thereby enabling emitted light to be transmitted through the apertures into the interior part of the device for disinfecting said fluid; a power source for powering the UV LEDs, wherein the inner surface is made from a light reflecting material, and the apertures are sealed in the ends extending into the interior part of the device by a UV-transparent material.

Sterilization technology is absolutely essential for our daily life. For example, it is used for water and sewerage system, foods, and medicine. Methods widely used for sterilization use drug, heating, ultraviolet (UV) radiation, and ozone. Chlorine is used extensively in sterilization because of its easiness and low cost. Using chlorine has some adverse effects such as alteration of quality of the target. Also it is bad for environment discharge water sterilized by drug to rivers and oceans. Conventional methods for UV sterilization use UV lamps. These are used to sterilize workspaces and tools used in biology laboratories and medical facilities. Low pressure mercury-vapor lamps emit 254, nm wavelength of UV which coincides very well with peaks of the germicidal effectiveness curve (i.e., effectiveness for UV absorption by DNA). Low pressure mercury-vapor lamps contain mercury and it has harmful effects to the environment and human body.
There are many systems that use ultraviolet light. Some systems are designed to generate effects such as fluorescing effects while other systems are used for the purification of objects, liquids and vapor.
Water purification systems are in great demand for industrial, home, portable, and other uses. These systems are designed to purify a predetermined quantity of water before dispensing for consumption or other use. There are many techniques or methods used to purify water. Usually, multiple techniques are employed within one purification device. Filters are generally used to remove particulates from the water while ultra-violet light is used to disinfect the water. The disinfection process may involve passing water through a clear tube while passing ultraviolet light through the tube simultaneously. The ultraviolet radiation is used to eliminate most bacteria and viruses.
UV light disinfects water by permanently deactivating organisms such as bacteria, spores, moulds, viruses or the like. Light having wavelengths between 200, nm and 300 nm, also known as UVC, is known to be responsible for this effect. This application of UV sterilisation in aquatic environments such as ponds or aquariums is also known.
However, UV lamps and tubes have relatively high power consumption. UV lamps and tubes also degrade over time and eventually become ineffective for water treatment making replacement necessary. This adds significantly to the costs of UV water treatment, both because of the relatively high cost of the new tubes, and because of the frequency of replacement. Furthermore, UV degradation is not immediately obvious to an observer. Hence, treatment lamps and tubes are often used for a long time after they become ineffective.
Although the sterilization technology using UV is a traditional method, development of efficient and low cost sterilization equipment is still lacking.
Also air contamination, particularly indoor air contamination, contributes to human health complications. Specifically, airborne chemical and/or biological contaminants, particularly when present in poorly ventilated areas, cause a wide variety of human illnesses. Biological contaminants include bacteria, fungi, fungi spores, protozoa, viruses, algae, pollen, various antigenic agents, and the like, and are known to cause such health complications as pneumonia, fever, mycotoxicosis, various infections, asthma and the like. Prior art air sterilization devices suffer from a number of problems. First, the devices are large and consume significant amounts of useable space in an office or home environment. Second, though they may provide a means for reducing airborne contaminants, they do not address the odors that may be present in the areas of intended use. In addition, the prior art devices are very inefficient. More often than not, they require an associated volume of air in the area of intended use to be recirculated multiple times through the device in order for the contaminants to be effectively removed.
WO2010071814A1, discloses a system for disinfecting a fluid. The system includes a flow cell with inlet and outlet ports, configured to communicate a fluid containing a biological contaminant from the inlet ports to the outlet ports through an interior portion thereof. The flow cell wall is provided with apertures and point radiation sources are disposed in these apertures. The point radiation sources are described to be UV optical sources, deep-UV optical sources, semiconductor optical sources, and/or LED optical sources. They are operable for delivering radiation to the biological contaminant. The interior surface of the flow cell reflects the radiation delivered by the point radiation source(s) such that a radiation intensity is uniform throughout the interior portion of the flow cell. The flow cell can be an integrating sphere or an integrating ellipsoid.
WO2007113537A1, discloses a treatment apparatus for at least partially disinfecting a fluid such as water comprising a pipe for conveying a flow of fluid to be treated, a series of ultraviolet (UV) light emitting diodes (LEDs) for emission of UV light into the fluid, and a control circuit for controlling operation of the LEDs. The pipe has apertures extending from the outer surface to the inner surface of the pipe and the UV LEDs are placed in the apertures. The aperture are sealed for fluid impermeability such that the fluid flowing in the tube, in operation, does not leak out of the pipe through wall. Electrical circuitry for operation of the LEDs is located on a flexible printed circuit board (PCB) wrapped cylindrically around the pipe. The apparatus also includes sensors which can for example monitor the level of UV or natural light passing through the fluid.
The prior art does not utilize UV LED point radiation sources emitting light through apertures sealed in the ends with a UV transparent material, and there is no indication that the flow cell is toroidal-shaped with an inner concave parabolic surface.
It is an object of the present invention to overcome one or more of the aforementioned problems in removing and/or generally reducing the presence of air or water borne contaminants in an efficient manner. In particular, there is a need for a flow cell with improved disinfection of a fluid to be treated.

Toroidal-shaped treatment device for disinfecting a fluid such as air or water


A feeding device configured for insertion into the gastrointestinal tract of a patient, and dynamic movement through the gastrointestinal tract toward the jejunum. The device includes an elongate tubular member having a plurality of distal projections disposed on an exterior surface thereof. The projections extend radially outwardly from the exterior surface of the tubular member a distance sufficient to engage an interior surface of the gastrointestinal tract during peristaltic contractions therein, and are configured to promote ingress of the device in response to the contractions. At least some of the projections are soluble under bodily conditions at the gastrointestinal tract, thereby facilitating removal of the feeding device.

1. Technical Field
The present invention relates to a device for invading body canals non-destructively and with a minimum of trauma. More particularly, the invention relates to a device, such as a feeding tube, having one or more removable external projections for dynamic advancement of the distal end of the device to the desired body site.
2. Background Information
Medical devices intended for non-destructive invasion of body canals have typically been provided with a low friction external surface. The low friction surface has a slippery texture to facilitate ingress of the device into the body canal for carrying out a medical procedure, and egress of the device from the body canal following termination of the procedure. Once inserted, such low friction devices were generally suitable for their intended use. However, the devices were often difficult to deliver and properly position at the desired site. In addition, insertion required a good deal of physician time and effort to insure adequate placement.
Recently, as set forth in U.S. Pat. Nos. 6,589,213 and 6,767,339, incorporated by reference herein, it was found that the ingress of the medical device or other instrumentation into a desired body site could be facilitated by providing a structure on the external surface of the device having a bi-directional coefficient of friction with respect to the tissue within the body cavity or canal that is engaged by the device during ingress. As disclosed in the incorporated-by-reference patents, the surface structure could be positioned along the device in a manner such that naturally occurring dynamic functions of the body, such as peristaltic contractions, could be used to grasp the surface structure of the device upon insertion, and carry the device toward the desired work site.
Devices such as those disclosed in the incorporated-by-reference patents have been successfully used, among others, as tubes for delivering feeding materials, drugs, contrast materials or saline, to a target site, within the body of the patient. One primary use of such devices is as jejunal feeding tubes ("J-tubes") for delivering nutritional products through the esophagus, and thereafter through the stomach or small intestine for delivery to the jejunum. Unlike conventional gastrostomy tubes ("G-tubes") that are utilized for delivery of nutritional products into the stomach, J-tubes bypass the stomach, and deposit the nutritional products directly into the jejunum (the middle section of the small intestine). Delivery of nutritional products to the jejunum is often preferred to delivery into the stomach, as it decreases the risk of adverse conditions such as gastric reflux and aspiration. In addition, in many cases, delivery directly into the jejunum provides better success in reaching patient nutritional targets, and does so at a more rapid rate than may be achieved with a conventional G-tube.
The device disclosed in the '339 patent employed a series of cilia-like flaps positioned along the external surface of the device. The flaps were positioned in a manner such that the surface could be grasped by the peristaltic contractions, and the distal end of the device propelled toward the target site. Self-advancing tubes, such as those described in the '339 patent, are available commercially from Cook Incorporated, of Bloomington, Ind., and are sold under the trademark TIGER TUBE®. Such tubes have been well received in the medical community, and have been found to achieve a high success rate in post pyloric placement of the feeding tube.
Once successful placement is attained with the self-advancing tubes, there is little or no benefit to maintaining the surface structure, such as the flaps of the '339 patent, on the exterior of the tube. Although the flaps are generally flexible, the presence of such flaps is unnecessary when the tube is withdrawn, and the additional diameter occupied by the flaps may impose an impediment to withdrawal. It would be desirable to provide a device having surface structure suitable for enhancing advancement to the target site by peristaltic contraction, and in which the surface structure is removable following successful placement of the device.


An apparatus for evaluating an epitaxial layer, including pre-treating the epitaxial layer before evaluation of the epitaxial layer by making the epitaxial layer contact with a metal electrode by a capacitance-voltage measurement, the method comprising; applying carbon-bearing compound to a surface of the epitaxial layer; subsequently irradiating ultraviolet light to the surface of the epitaxial layer; and thereby forming an oxide film on the surface of the epitaxial layer.

1. Field of the Invention
The present invention relates to a method for pre-treating an epitaxial layer, a method for evaluating an epitaxial layer, and an apparatus for evaluating an epitaxial layer. Specifically, the present invention relates to a method for pre-treating an epitaxial layer a method for evaluating an epitaxial layer, and an apparatus for evaluating an epitaxial layer, which enable stable measurement of resistivity of the epitaxial layer.
2. Description of Related Art
Recent remarkable progress of the integrity of silicon semiconductor devices requires a strictly high quality of silicon wafer as a substrate for the semiconductor device.
For example, since crystalline defects such as dislocations and metallic impurities cause an increase of leak current and reduction of carrier-lifetime, reduction or elimination of the crystalline defects and metallic impurities from a device active region as a region for forming devices on a wafer is strictly demanded compared with the conventional level, in order to satisfy refinements of circuits with increasing integrity.
In order to satisfy such demands, an epitaxial wafer has been developed by growing an epitaxial layer substantially free of crystalline defects on the wafer, and frequently used in the manufacture of highly integrated devices.
A p+ type or n+ type silicon wafer doped with boron or phosphor to a high concentration has been used as a wafer for growing an epitaxial layer thereon. A N type or P type epitaxial wafer is produced by forming a p− type or n− type epitaxial layer doped with boron or phosphor to a low concentration on the p+ type or n+ type silicon wafer.
Characteristics of the epitaxial wafer when checked for quality control include the resistivity of the epitaxial layer, flatness of the epitaxial layer, and warpage of the epitaxial wafer, and haze of a surface of the epitaxial wafer. Especially, correct measurement of the resistivity is required since the resistivity is the most fundamental property of the wafer. Conventionally, the Hg-CV measurement belonging to capacitance-voltage measurement has been widely used as a method to measure the resistivity of an epitaxial layer of the above-described N type or P type epitaxial wafer. In the Hg-CV measurement, an oxide film is firstly formed on the surface of the epitaxial layer, and the oxide film is made to contact with a mercury electrode, thereby forming a so-called Schottky junction. Next, with the Schottky junction intervening, property of the capacitance (C) and electric voltage (V) in the reverse direction are measured. The resistivity of the wafer can be determined based on the measurement result of the C-V property and donor concentration. Japanese Unexamined Patent Application, First Publication No. H6-140478 (Patent reference 1) describes an apparatus for measuring the resistivity of an epitaxial layer based on a principle of the HV-CV measurement.
As a method for forming an oxide film on the surface of an n-type epitaxial layer, there is known a method standardized by ASTM F1392. In this method, a wafer is immersed for several minutes in a solution containing an oxidizing agent such as hydrogen peroxide, subsequently cleaned and dried. By this treatment, a thin oxide film is formed on the surface of the wafer.
However, in this method, a large amount of the solution containing the oxidizing agent are required, and a relatively long treating-time of about 20 to 30 minutes. In addition, there is a possibility that a long treating-time results in a delay of feed-back of measurement results of resistivity in the manufacturing process of epitaxial layers.
On the other hand, in the standard pretreatment-method of a p-type epitaxial layer, a wafer is immersed in a HF solution, subsequently rinsed in pure water, dried by spinning, and is subjected to Hg-CV measurement. Although this method allows measurement of resistivity of the p-type epitaxial layer, there is a demand for further reducing dispersion of the measured value. In an alternative method recently proposed for oxidizing n-type wafers (patent reference 2: Published Japanese Translation No. 2002-516486 of PCT International Publication), ultraviolet (UV) light is irradiated to the wafer placed in an oxygen bearing atmosphere, thereby generating atomic oxygen or ozone and oxidizing the wafer by the atomic oxygen or by the ozone.
On the other hand, in a method proposed for treating a p-type wafer, an inert carrier gas is blown into the acid trap containing hydrofluoric acid, and a surface oxide film of the wafer is removed by the carrier gas.
However, even in the method described in Patent Reference 2, depending on the pretreatment conditions such as irradiation time of UV light, a dispersion in measured resistivity could not be avoided.
Based on the above-described circumstances, with regard to an n-type epitaxial layer, an object of the present invention is to provide a method for pre-treating the epitaxial layer, method for evaluating the epitaxial layer, and an apparatus for evaluating the epitaxial layer, which enable a reduction of consumption of the agent for pretreatment, shortening of treatment time, and reduction of dispersion of the measured value.
In addition, with regard to a p-type epitaxial layer, an object of the present invention is to provide a method for pre-treating the epitaxial layer, method for evaluating the epitaxial layer, and an apparatus for evaluating the epitaxial layer, which require a longer time than the conventional method, but enable a reduction of dispersion of the measured value.

Method for pre-treating epitaxial layer, method for evaluating epitaxial layer, and apparatus for evaluating epitaxial layer

Abstract: An apparatus for evaluating an epitaxial layer of an epitaxial wafer, the apparatus including a pretreatment unit for pre-treating an epitaxial wafer having a semiconductor wafer and an epitaxial layer formed on the semiconductor wafer, a metal-electrode which can be made contact with or vapor-deposited on the surface of the epitaxial layer of the epitaxial wafer which has been pre-treated in the pretreatment unit, a measuring electrode which can be made contact with or vapor-deposited on the semiconductor wafer, and a measuring unit which is connected to each of the electrodes and is used to measure physical properties of the epitaxial layer. The pretreatment unit includes an applying device for applying a carbon-bearing compound to a surface of the epitaxial layer, and an irradiation device for irradiating ultraviolet light to the surface of the epitaxial layer in an oxygen-bearing atmosphere.


The method of manufacturing the semiconductor device that includes a high voltage MOS transistor with high operating voltage under both high and low gate voltages with low-cost is disclosed. When manufacturing the high voltage MOS transistor, a portion of a gate insulation film is removed to form an opening that exposes an outside area of the active area, which is outside of the central area where a gate electrode will be formed. A shallow grade layer is formed by implanting impurities into an opening with an energy that does not permit penetration of impurity ions through the gate insulation film.

This invention is first described in and claims priority from Japanese Application No. 2004-328626, which is incorporated by reference in its entirety.
The present invention relates to a method of manufacturing semiconductor devices having mask LDD (Lightly Doped Drain)-type high voltage MOS transistor with fewer manufacturing steps and the MOS transistor that is manufactured by the method. It particularly relates to a method of manufacturing semiconductor devices including high voltage MOS transistors whose maximum operating voltages are improved and the semiconductor devices that are manufactured by the method.
In order to drive a liquid crystal display device, for example, it is required that both low voltage MOS transistors which operate with a low power-supply voltage of, for example, 3.3V and high voltage MOS transistors which operate with a high power-supply voltage of, for example, 18V, are located on the same semiconductor substrate.
Among the above mentioned MOS transistors, a low voltage MOS transistor is, for example, formed in a well-known self-aligned LDD process as disclosed in reference 1. First, a gate insulation film is formed on a surface of an active area of a first conduction type in a surface of a semiconductor substrate, and a gate electrode is formed on the gate insulation film. Secondly, on both sides of the gate electrode, an LDD and lightly doped source layers are formed by implanting ions of impurities of a second conduction type at low concentration in a self-aligned process using gate electrode as a mask. Then, sidewall films are formed on sidewalls of the gate electrode, and the heavily doped source layer and heavily doped drain layer are then formed on the outside of the sidewall films by implanting ions of the impurities of the second conduction type at high concentration in a self-aligned process using the gate electrode and the sidewall films as a mask. In this method, the distance between the high concentration drain layer and the edge of the gate electrode is made equal to the width of the sidewall film.
On the other hand, it is necessary to make the gate insulation film of the high voltage MOS transistor thicker than that of the low voltage MOS transistor in order to improve the breakdown voltage between the gate and the source. Therefore, as disclosed in reference 1, a thick gate insulation film is formed first on the entire surface area of the semiconductor substrate by the thermal oxidation method, for example. The thick gate insulation film is then patterned by using a resist mask so that it is selectively removed in areas for forming low voltage MOS transistors. Then, the thin gate insulation film is formed again by a heat oxidation method, for example, in areas for forming low voltage MOS transistors.
For realizing a transistor with high breakdown voltage, it is also necessary to expand the distance between the gate electrode and the heavily doped drain layer to improve the breakdown voltage between the drain and the source. Therefore, for example, a structure of so-called "mask LDD" structure is utilized as disclosed in reference 1. In the "mask LDD" structure, heavily doped drain layer is formed with a certain distance apart from the gate electrode by implanting ions by using a resist mask. In this case, a low concentration layer whose conduction type is the same as the heavily doped drain layer is also formed between the edge of the gate electrode and the heavily doped drain layer, similar to the case of the LDD layer of the low voltage MOS transistor. Though this layer is named "high voltage area implanted by LDD" in reference 1, it is named a "grade area" in this specification.
However, there was a problem in that it was difficult to sufficiently increase the breakdown voltage ("breakdown voltage when operating" or "on-state breakdown voltage") of this type of conventional MOS transistor. The problem was that when the drain voltage increases, the difference between the drain current and the source current increases, and the transistor destructs. This phenomenon of destruction depends on the concentrations of impurities of the grade area. However, the phenomenon occurs in the area of high gate voltages when the concentration is low, and in the area of low gate voltages when the concentration is high. Therefore, it is difficult to increase the breakdown voltage in both areas at the same time.
On the other hand, reference 2 discloses a semiconductor device comprising: a gate electrode formed on one conductive type semiconductor substrate through a gate insulation film; a high concentration reverse conductive type source region adjacent to one end of said gate electrode; a low concentration reverse conductive type drain region formed facing said source region through a channel region; a high concentration reverse conductive type drain region separated from the other end of said gate electrode and included in said low concentration reverse conductive type drain region; and a middle concentration reverse conductive type layer at a region spanning at least from the position having the predetermined space from said gate electrode to said high concentration reverse conductive type drain region, and formed so that high impurity concentration becomes lower at a region near the gate electrode than near said high concentration reverse conductive type drain region.
Reference 3 discloses the high breakdown voltage MOS transistor comprising a semiconductor substrate; a gate insulation film formed on the semiconductor substrate; a gate electrode formed on the gate insulation film; and an impurity diffusion layer formed by overlapping low, medium and high concentration impurity layers on the semiconductor substrate of at least one side of the gate electrode. Reference 3 also discloses the manufacturing method of the high breakdown voltage MOS transistor.    Reference 1: Official Gazette of Japanese Patent No. 3473902    Reference 2: Official Gazette of Japanese Laid-open Patent No. 2002-261276    Reference 3: Official Gazette of Japanese Laid-open Patent No. 8-172191
References 2 and 3 disclose an improvement in the breakdown voltage by adding the middle concentration layer in addition to the grade layer and the heavily doped drain layer. (In each reference, it is called the "middle concentration reverse conductive type layer," and the "medium concentration impurity layers," respectively.)
However, the manufacturing processes disclosed in the above references require forming the resist pattern to determine the position of the middle concentration layer. Therefore, a different photo-mask would be required in order to form the middle concentration layer, when the methods of forming the gate insulation film of two kinds of thicknesses disclosed in reference 1 are combined, for example, and the high voltage MOS transistor and low voltage MOS transistor are formed on the same semiconductor substrate. Also, it would be necessary to perform an additional process in order to form the resist pattern by using this different mask. Therefore, these process steps would increase the manufacturing cost.

Method of manufacturing semiconductor device and the semiconductor device manufactured by the method


A tubular stent (1) has first and second ends (2,3) and a longitudinal axis (4) therebetween. The tubular stent (1) is formed from a network of struts which defines a cylindrical surface about the longitudinal axis (4), the struts delineating a plurality of cells {23, 30, 31, 32, 33) within the network, there being rows of cells parallel to the longitudinal axis (4). At least one cell in each row is a nodal cell (23). There is an increase in the maximum length parallel to the longitudinal axis (4) of cells from the at least one nodal cell (23) to a first distal cell (30) in the row that is closer to the first or second end (2, 3) of the tubular stent (1). There is a second distal cell (31) in the row which has a different maximum length parallel to the longitudinal axis (4) from the nodal cell (23) and the first distal cell (30). The network of struts comprises a plurality of circumferential rings (6, 6′, 9, 9′, 13, 13′, 16, 16′, 17, 17′). Each ring (6, 6′, 9, 9′, 13, 13′, 16, 16′, 17, 17′) extends perpendicularly to the longitudinal axis (4) and the rings are located adjacent to each other parallel to the longitudinal axis (4) to define the cylindrical surface. The circumferential rings (6, 6′, 9, 9′, 13, 13′, 16, 16′, 17, 17′) are of a wave form. Each circumferential ring (6, 6′, 9, 9′, 13, 13′, 16, 16′, 17, 17′) has an amplitude parallel to the longitudinal axis (4), such that each wave form comprises a plurality of peaks (7, 10, 14, 18, 20) which extend towards the axial centre (5) of the tubular stent (1) and a plurality of troughs (8, 12, 29, 21, 36) which extend away from the axial centre (5) of the tubular stent (1).

There are many medical situations where it is necessary or desirable to implant a stent within a patient in order to prevent or counteract a constriction in a naturally occurring vessel or passage. In this context, a "stent" is an artificial tubular structure which is able to apply force radially outwardly on a vessel or passage of a patient in order to maintain patency of the vessel or passage and permit fluid flow through the vessel or passage.
The most common procedure in which a stent is implanted in a patient is implantation in a coronary artery which has become partially blocked or occluded (referred to as being "stenosed") by a lesion or plaque. In this procedure, a stenosed coronary artery is opened through an angioplasty procedure in which a crimped stent is introduced into the stenosed artery and the stent is expanded within the artery, for example, by using a balloon on a catheter. Expansion of the stent compresses the lesion or plaque blocking the coronary artery and allows blood to flow through the artery without constriction. As part of the procedure, the stent is left in place in the artery, in expanded form, in order to maintain the patency of the artery. In some procedures, prior to implantation of the stent, a pre-dilation step is carried out by expanding a balloon on a catheter within the section of the coronary artery affected by the lesion in order to compress the lesion or plaque prior to insertion of the stent. Vascular stents are also used in other blood vessels aside from coronary arteries and the implantation procedure is similar.
One of the main requirements of a vascular stent is that it can be enlarged from a crimped configuration which has a sufficiently small radial diameter in order to be guided in an angioplasty procedure, to an expanded configuration in which the exterior surface of the stent contacts and engages with the inner surface of the blood vessel. Moreover, in the expanded configuration, the stent must have sufficient radial strength in order to maintain the lumen of the blood vessel open. There are various different forms of construction of vascular stents but a common form is a metal mesh stent in which the stent comprises a network of struts which delineate a plurality of cells within the network. The struts are hinged or otherwise deformable with respect to each other which permits expansion of the stent after implantation. However, more recently, mesh stents have been made from other materials such as biodegradable polymers.
One problem with mesh stents is that of "arterial recoil". After a mesh stent has been expanded, the stent may not have sufficient radial strength to withstand the radially inward force of the blood vessel such that the stent is squeezed and the blood vessel constricts. There are various solutions to this problem, although none is ideal. For example, one solution is to reduce the cell size of the mesh which directly increases the radial strength of the stent. However, the problem with this approach is that decreasing the cell size reduces the flexibility of the stent which can make implantation of the stent difficult because blood vessels are not perfectly cylindrical in shape and thus the natural conformation of a blood vessel may be lost when the stent is implanted.
Another solution is to increase the thickness of the strut size. However, there is evidence that suggests that the thicker the struts of a mesh stent, the greater the likelihood of restenosis after implantation of the stent.
The problem of arterial recoil in mesh stents can occur with metal mesh stents but is particularly a problem with polymer mesh stents which have less intrinsic strength than metal mesh stents.
U.S. Pat. No. 6,059,822 reports on a mesh stent that has large mesh portions at either end of the stent and a small mesh portion at the longitudinal centre of the stent. The small mesh portion has a mesh of a smaller size than the larger mesh portion and is used at the longitudinal centre of the stent where the main lesion is located once the stent is implanted. The small mesh portion provides more radial strength and lessens any chance of prolapse. The ends of the stents, however, have a larger mesh size so as to reduce the damage to healthy tissue parts of the artery in which the stent is located. Thus there are only two different cell sizes in the stent. However, there is always a demand to improve upon the configuration of mesh stents so as to avoid the problem of arterial recoil along the longitudinal length of the stent whilst maintaining flexibility and minimising arterial injury.
The background to the invention has been explained above in relation to vascular stents but it is to be understood that the present invention is not limited thereto. Stents other than vascular stents exist such as ureteral, urethral, duodenal, colonic and biliary stents, and analogous problems arise with these stents as have been described above in relation to vascular stents.
The present invention seeks to alleviate one or more of the above problems.


A dispenser for dispensing double-sided adhesive tape, from a reel, comprising a press for pressing the tape onto a product, a cutter which guides the tape and makes an incision in the tape and a controller for controlling the application of the tape to the product.

For unwinding double-sidedly self-adhesive material on a reel there are a large number of unwinders which are tailored to the particular material, whether it be a narrow or else, possibly, wide adhesive tape or a wide adhesive sheet.
By way of example, EP 0 121 371 A1 discloses an apparatus which is used for placing a double-sided adhesive tape on packaging for cigarettes, inter alia. The apparatus comprises a means for moving the packaging material and a dispenser for supplying the adhesive strip to a location where it is to be brought into contact with the moving packaging material. The dispenser comprises a frame carrying                a support means for receiving a rotatable reel of the adhesive tape,        a guide means defining a tape path from the reel to said location,        a brake means, and        a drive means.
The guide means is formed in turn by a fixed guide member and also a second guide member, which is mounted for a pivotal movement around a pin, in order to be movable relatively within the tape path in accordance with changes in the tension of the tape. Extending between the members are a tension spring and a slidable balance weight, which is carried by the second guide member and is adjustable so that the second guide member is in equilibrium about the pin.
The brake means is provided in order to reduce the rotational speed of the reel and is controlled by the relative motion of the members, whereby the brake means is released as the tension in the tape increases and applied when the tension in the tape decreases. The drive means serves for forced drive of the reel and so produces a rotational speed which becomes greater in dependence on an increase in the tension of the tape moving along said path.
In the papermaking industry, the finished paper is wound onto reels some of which are up to eight meters in width.
At the interior of the reels there is a core or sleeve, usually of cardboard, which at the beginning gives the reel the necessary stability in order to allow the winding operation. The winding operation starts by the application to the core in the longitudinal direction of a strip of adhesive, the beginning of the paper being fixed to this strip and thus to the core. The adhesive is normally a hotmelt adhesive, which is applied automatically in appropriate width by way of a nozzle, which for that purpose is caused to travel over the core in the longitudinal direction.
Since the plant and apparatus for processing hotmelt adhesive is complex and susceptible to faults, attempts have been made to replace the hotmelt adhesive by double-sided adhesive tapes.
To date, these adhesive tapes have normally been dispensed onto the core by hand using a manual unwinder adapted appropriately to the adhesive tape.

Dispenser for continuously and discontinuously dispensing material composed of double-sidedly self-adhesive carrier material on a reel


The present invention provides fiber and a fiber structure having a high flame-retarding property and high moisture-absorptive property which do not generate noxious gases such as hydrogen halide gas upon burning, do not elute heavy metal compounds and phosphorus compounds therefrom even when reclaimed upon discarding including a burning treatment and have an excellent processing property.

Up to now, many methods have been proposed for preparing a flame-retarding fiber and one of them is a post-processing method where a flame retardant such as phosphorus compound or halogen compound is adhered and fixed on the surface of the fiber but, in that method, it is difficult to adhere a lot of the flame retardant as such so that it is difficult to prepare a fiber having a high flame-retarding property and, in addition, there are various problems such as durability, changes in texture and toxicity of the flame retardant itself and also upon burning.
A representative example of other methods is a method where fiber is formed using a polymer in which a halide monomer such as vinyl halide and vinylidene halide is copolymerized but, in that method, it is necessary to copolymerize a halide monomer in large amount for preparing a highly flame-retarding fiber and, as a result, there is also an essential disadvantage such as generation of noxious gases upon burning.
Against the problems as such, flame-retarding fibers in which carboxyl group obtained by a hydrolysis reaction of a cross-linked acrylate fiber is cross-linked by a polyvalent metal ion such as zinc, copper, calcium and iron have been proposed in Japanese Patent Laid-Open Nos. 01/314,780, 02/084,528 and 02/084,532. However, a limiting oxygen index (hereinafter, it will be referred to as LOI) showing the degree of flame-retarding property is as high as 37 in the fiber where vinylidene chloride which is a halide monomer is used but, when no halide monomer is used, it is 34 at the highest.
In Japanese Patent Laid-Open No. 04/185,764, there is a proposal for a cross-linked acrylate fiber where an increase in nitrogen content by hydrazine cross-linking is more than a predetermined value in which ionic cross-linking is conducted by copper ion. In that case, a product of a high flame-retarding property where the LOI is up to 35 at the highest is able to be prepared. However, since it uses copper, copper ion which is heavy metal ion causes a problem in its discarding or in discarding after burning.
In the Japanese Patent Laid-Open Nos. 08/325,938 and 09/059,872, there is a description for a moisture-absorptive fiber having a flame-retarding property where carboxyl group is introduced by hydrolysis into an acrylate fiber into which cross-link has been introduced by hydrazine and said carboxyl group is made into a metal salt type selected from the group consisting of calcium, magnesium, aluminum, copper, zinc and iron salt type. However, in the fiber of a calcium salt type disclosed in Examples of those documents, LOI is 30 at the highest and no high flame-retarding property is bestowed. Although moisture-absorptive property is said to be one of the characteristics therein, the moisture-absorptive rate at 20° C. and 65% relative humidity is about 30% at the highest and very high property is not achieved.
In Japanese Patent Laid-Open No. 10/237,743, there are examples for pile cloth as a structure comprising an acrylate fiber where hydrogen and at least one type of metal selected from calcium, magnesium and aluminum are bonded to carboxyl group. However, LOI of the flame-retarding acrylate fiber (trade name: "eks" (trade mark) manufactured by Toyobo) disclosed in Examples of said document is 31 at the highest and the fiber is not highly flame-retarding.

Fiber and a fiber structure having a high flame-retarding property and high moisture-absorptive property

Abstract: The present invention discloses a highly flame-retarding and moisture-absorptive fiber, characterized in that, it comprises an organic polymer having a cross-linking structure and a salt-type carboxyl group in which at least a part of such a salt-type carboxyl group is a magnesium salt type and a saturated moisture absorption rate at 20° C. and 65% relative humidity and a limiting oxygen index are not less than 35% by weight and not less than 35, respectively, and a flame-retarding fiber structure wherein the highly flame-retarding and moisture-absorptive fiber is used in at least a part of the structure.


The present invention provides a multi-layer polymer composition having a polar outer layer and a non-polar second outer layer. The polar outer layer is preferably PVC and the non-polar outer layer, polypropylene. The adhesive tie layer is a unique blend of a copolyester elastomer, a non-polar polymer, and a copolymer that contains functional groups capable of reaction with the functional end groups of the copolyester elastomer and that is totally or partially miscible with the non-polar polymer in the second outer layer. The multi-layer polymer can be advantageously coextruded. The non-polar outer layer can comprise the bulk of a fabricated part, with only a thin layer of polar polymer, providing desired attributes of the polar polymer at a lower cost.

1. Field of the Invention
This invention relates to multi-layer polymer compositions that comprise two outer layers and an adhesive tie layer. This invention specifically relates to a multi-layer polymer composition comprising a polar polymer, e.g. polyvinylchloride (PVC), as the first outer layer, a non-polar polymer, e.g., polypropylene, as the second outer layer, and a unique blend of polymers for the adhesive tie layers that allows the composition to be easily and advantageously coextruded.
2. Description of Related Art
It is often desirable to adhere polar polymers to non-polar polymers. Non-polar polyolefins, such as polyethylene and polypropylene, have traditionally been available at a lower cost than polar polymers. Using the non-polar polymer for the bulk of a fabricated part, with only a thin layer of polar polymer on the surface, can provide attributes of the polar polymer at an overall lower cost.
As a specific example, PVC siding used in the housing construction industry typically has poor dimensional stability. Because of its low glass transition temperature, Tg, and flexibility, it can expand and contract with swings in atmospheric temperature, which can be a problem when used as housing siding. To minimize this problem, only heat-reflecting, light colors can be used.
To overcome the problem of poor dimensional stability, the PVC can be combined with a thick substrate of polypropylene, and/or glass fiber-reinforced or filled polypropylene, which are stiffer at all temperatures and more dimensionally stable. This can reduce cost, also, since the more expensive PVC can be a much thinner layer than that used in conventional siding. With the dimensional stability problem solved, darker color PVC's can also be used.
The problem remains, however, of adhering the polar polymer, e.g., PVC, to the non-polar polymer, e.g., polypropylene, in a structurally sound and cost-efficient manner.
Attempts have been made to solve this problem in the past. For example, U.S. Pat. No. 6,045,732 (Nakatsuji et al.), discloses a multi-layer molded article having a skin material layer of a vinyl chloride resin and a propylene resin core. They disclose an adhesive layer (A), used to combine the vinyl chloride resin and propylene resin core, containing two layers, one layer (polyester resin and epoxy-group containing ethylene copolymer) bonded to the vinyl chloride resin, one layer (at least one copolymer selected from an ethylene copolymer and epoxy group-containing copolymer) bonded to the propylene resin core. Alternatively, adhesive layer (B), comprising an ethylene resin composition containing a polybasic carboxylic acid and an epoxy group-containing copolymer, can be used. These multi-layer articles, however, must be formed by molding under heat and pressure to form the final multi-layer article. The adhesive layers are formed in advance in a separate step by, for adhesive layer (A), co-extruding the adhesive layer, or by powder molding, inflation molding or extrusion, for adhesive layer (B).


Memory systems and methods are described. In one embodiment, a circuit board has front and back surfaces. At least one memory device having a plurality of pins is mounted on the front surface of the circuit board. At least one other memory device having a plurality of pins is mounted on the back surface of the circuit board. The memory devices are mounted on the circuit board such that at least some pins from the one memory device align with at least some pins of the other memory device to provide aligned pin pairs. A via is disposed in the circuit board and extends between and connects individual pins of an aligned pin pair.

The trend in the computer industry is toward designing systems with higher processing speeds and smaller packaged subsystems to increase performance and throughput in support of increasingly demanding applications. Information access from off-chip caches and memories to the processing unit dictates overall performance of these computing systems. A processing unit made up of an integrated circuit typically connects to an external cache or memory IO through wiring (i.e. a bus) on a printed circuit board. External bus speeds do not scale with improvements in speed within the integrated circuit or processing unit due to the limiting effects of board level parasitics, which include connecting wires and discontinuities in the signal path such as those associated with vias and stubs.
Component package parasitics on power and ground paths limit power delivery to on-die circuitry to support high speed switching transients. Bus performance is generally improved in terms of timing and noise margin by optimizing the interconnect topology between the connecting devices, by reducing wiring lengths, matching wire lengths, minimizing discontinuities, providing proper termination and adequate decoupling.
Circuit boards such as motherboards designed for high performance systems need to support a variety of fine pitch components with high IO density using a combination of signal redistribution, signal routing, and power and ground layer configurations thus driving overall layer count and board thickness higher. Connectivity or transition between various metal layers is accomplished using vias with conductive walls through openings in dielectric layers. These vias present themselves as electrical discontinuities to the controlled impedance interconnect path from the controller to the memory devices. Compared to standard memory dual in line memory modules (DIMM) modules which host only memory devices, layer to layer via transitions for signal routing in motherboards has become more electrically significant because of relatively large board thickness.
Accordingly, this invention arose out of concerns associated with providing improved memory systems and related methods.

Hewlett-Packard Development Company, L.P.


Provided is a plug that enables reliable and easy removal of a plug body together with a cover member from a tubular container without increasing an outwardly-bulging flange portion of a grip part of the plug body and is superior in productivity. A plug 1 for closing an open end of an open-ended tubular container 4. A cover member 3 is fitted on a plug body 2 including a press-fit part 2a and a grip part 2b. An engagement portion 3d is extended from a head plate 3a of the cover member 3 into a recess 2d in the upper surface of the plug body 2 to face an inside wall 2e surrounding the recess 2d. When an external force is applied to incline the head plate 3a with respect to the upper surface of the plug body 2, the engagement portion 3d is engaged to the inside wall 2e.

Plugs made of rubber, elastomer or the like are conventionally used in order to seal bodily fluid collection tubes, such as a vacuum blood collection tube.
Patent Literature 1 below discloses an example of a plug of this kind. FIG. 9(a) is a partly cutaway front cross-sectional view for illustrating a plug described in Patent Literature 1. The plug 102 is attached to an upper end opening of a closed-bottomed, cylindrical, bodily fluid collection tube 101 to seal it. The plug 102 includes a plug body 103 made of rubber, elastomer or the like and a cover member 104. The plug body 103 includes a press-fit part 103a press-fitted into the bodily fluid collection tube 101; and a grip part 103b continued upward from the press-fit part 103a. The cover member 104 is fitted to the grip part 103b to cover the grip part 103b.
The cover member 104 includes a head plate 104a engaging against the upper surface of the grip part 103b of the plug body 103. A skirt 104b is provided to extend downward from the outer peripheral edge of the head plate 104a.
Alternatively, Patent Literature 2 below discloses a plug 111 shown in front cross-section in FIG. 10. The plug 111 includes a plug body 112 made of rubber, elastomer or the like and a cover member 113 fitted on the plug body 112. A press-fit part 112a of the plug body 112 is press-fitted into a bodily fluid collection tube 101. A grip part 112b continued upward from the press-fit part 112a is covered by the cover member 113.
An annular retaining ring 114 is placed on the upper surface of the grip part 112b. The cover member 113 has a tubular shape. An annular extension 113a is provided to extend inward from the upper open edge of the cover member 113. The retaining ring 114 is engaged to the annular extension 113a against slipping out upward.
The cover member 113 is provided at the middle of the height with an annular engagement ledge 113b extending inward from the inside wall of the cover member 113. The annular engagement ledge 113b is clamped between the lower surface of the grip part 112b of the plug body 112 and the upper end of the bodily fluid collection tube 101. Specifically, the grip part 112b is formed to have a larger diameter than the press-fit part 112a of the plug body 112, so that a shoulder 112c is formed on the lower surface of the grip part 112b. The annular engagement ledge 113b is engaged against this shoulder 112c.
The cover members 104, 113 described in Patent Literatures 1 and 2 are provided to allow examining staffs to easily remove the plug bodies 103, 112 from the bodily fluid collection tubes 101 without touching the plug bodies 103, 112 with their hands. Specifically, by applying a force to the cover members 104, 113 with fingers to move it away upward from the bodily fluid collection tubes 101, the plug bodies 103, 112 can be removed together with the cover members 104, 113 from the bodily fluid collection tubes 101.


Various examples relate to a transcatheter delivery system including a sheath, a delivery catheter, and an implantable device (e.g., a prosthetic valve, a stent, a stent graft, occluder, or vascular filter) maintained in a collapsed configuration by the delivery catheter. The delivery catheter includes a plurality of fiber guides separated by one or more reduced profile sections each having a smaller transverse outer profile than the transverse outer profiles of the fiber guides.

Depending on device design and the delivery system used, implantable devices, such as prosthetic valves, are deliverable to a treatment site using a variety of methods. As one example, U.S. Pat. No. 9,629,718 to Gloss et al., issued Apr. 25, 2017, is directed to a system that includes a prosthetic valve having a self-expanding frame and a holder configured to retain the frame of the prosthetic valve in a constricted configuration and to control expansion of the frame. According to Gloss et al., the holder has a controllably constrictable and expandable loop, wherein the loop is disposed about at least a portion of the self-expanding frame such that constriction or expansion of the first loop controls constriction or expansion of the frame.
Advances over existing and contemplated transcatheter delivery systems in the pertinent field remain to be realized.

Transcatheter deployment systems and associated methods


A payload perimeter protecting bumper and method of stopping an approaching vehicle from coming too close to a parked vehicle which includes a male receiver insert structure, which is configured to be inserted into and coupled to a hitch receiver on a truck, an intermediate portion disposed between male receiver insert structure and bumper member, which provides for the pivoting ability. The bumper member has an elongated pivotable structural member. The system is configured so that if you were to be trapped, you could unlock the pivot limiting pin and pivot upward the elongated pivotable structural member, thereby creating more space to move to exit the parking spot. In some embodiments, the elongated pivotable structural member could have a remote controlled linear actuator, with a length that could be automated.

In the past, farmers often use pickup trucks to haul pallets of seed or other agricultural products.
These pallets are often loaded into the payload area of the pickup trucks by using fork lifts. Normally, the tailgate is folded down when the forklift moves the pallets into the truck.
While this practice has been used frequently for many years, it does have some drawbacks. Often the front end of the forklift will run into the tailgate causing damage which can render the tailgate unusable.
Consequently, there exists a need for new systems and methods for loading a pickup truck with a forklift without damaging the tailgate.


The present invention provides a veterinary treatment method for animals suffering from a high arousal state. The treatment employs a class of pharmacologically active compounds having a pyrimidinyl-piperazine ring structure of which the most preferred member is buspirone. These compounds are administered to a variety of different domestic animals and household pets exhibiting behavioral problems which often are refractory to other modes of treatment.

Clinical behavior modification for domestic animals and household pets is a relatively new specialty in veterinary medicine and is poorly understood today by most practicing veterinarians. Prior to about 1974, the science of veterinary animal behavior was in its most rudimentary stages and the idea of treating specific behavioral problems in domesticated dogs and cats was still in its infancy. Subsequently, over the next approximately ten years (1974-1984) animal behavior modification focused mainly on behavioral shaping using techniques developed from the science of ethology (the study of innate animal behavior patterns) and similar conditioning strategies. Even in the mid-1980's the use of specific pharmacologically active substances to modify animal behavior was only just being explored and investigated. The outmoded psychopharmacological approach then employed was along lines popular in human medicine in the 1950's when neuroleptics such as chlorpromazine were first introduced for human psychotherapy. Only since about 1985 has the specific approach to pharmacologic modification of animal behavior disturbances been fully appreciated as being both possible and desirable.
The nature and depth of the problem is illustrated by a common behavioral problem in domestic cats--inappropriate elimination or urine marking. In the domestic cat, urine marking (or spraying) usually occurs in response to the stress of competition between cats; or in response to anxiety provoking interactions with people. This is a frustrating situation for cat owners; and, unfortunately, an incomplete resolution of this problem may, and often does, result in euthanasia of the cat by its owners.
It will be recognized and appreciated that the most common veterinary therapies to solve the behavioral problem of urine making include gonadectomy, environmental modification, and pharmacologic intervention [Borchelt, P. L., Compendium Continuing Education Pract. Vet. 8:197-205 (1986)]. Gonadectomy greatly reduces or stops urine marking; however, it has been reported that 10% of 134 castrated male cats and 5% of 152 spayed female cats continue to spray inappropriately following the surgery [Hart, B. L. and L. Cooper, Med. Assoc. 184:1255-1258 (1984)]. Moreover, cats are often refractory to both environmental and behavioral modification as a treatment for spraying or urine marking [Hart, B. L. and L. A. Hart, Canine and Feline Behavior Therapy, Lea & Febiger, 1985, p 134].
Among the different drugs presently prescribed as a treatment for urine spraying in cats are the progestins and the benzodiazepine, diazepam. Both of these drug therapies have had but limited success and are associated with undesirable side-effects for the animal. The progestins, medroxyprogesterone acetate and megestrol acetate, have been reported to eliminate urine marking behavior in approximately one-third of animals treated [Hart, B. L., J. Amer. Vet. Med. Assoc. 177:5229-533 (1980)]. Prolonged progestin therapy is also associated with recognized increases in appetite, body weight, and insulin levels. Progestins also have been reported to produce mammary gland hyperplasia, diabetes mellitus, acromegaly, pyometra, and adrenocortical suppression [Henik et al., Comp. Cont. Ed. Pract. Vet. 7:132-140 (1985)]. In comparison, diazepam has been shown to stop or reduce the frequency of spraying in neutered cats. However, side-effects of diazepam therapy include lethargy, temporary ataxia, and increases in appetite [Marder, A. R., Proceding of Animal Behavior Society Meeting, Raleigh, N.C., 1985]. Tolerance to the effects of the drug and physical dependence are also major problems associated with benzodiazepine therapy.
Accordingly, it is recognized and appreciated by veterinary practitioners and animal behavioral specialists that there remains a standing need for novel pharmacological treatments for a variety of animal behavior disturbances. Moreover, were a new class of pharmacologically active compounds to become available for clinical behavior modifications in domestic animals and household pets, this method would be of major advantage and maximum benefit both for the animal as well as its owner.

Veterinary method for treating inappropriate elimination of urine in household pets