An ink jet recording apparatus has a recording head 22 having pressure chambers to which ink is supplied, pressure generation elements for generating pressure in the pressure chambers, and nozzle orifices 8 communicating with the pressure chambers for jetting ink drops, a cap 24 for sealing a nozzle face 40 of the recording head 22 while defining an internal space therein, and a suction pump for giving negative pressure to the internal space of the cap 24, and the cap 24 contains a cover member 33 for covering all nozzle orifices 8 with the cap 24 sealing the nozzle face 40, whereby bubbles occurring in the internal space of the cap 24 are prevented from adhering to the nozzle face 40 and entering the nozzle orifices 8 and a print failure is prevented from occurring.

This invention relates to an ink jet recording apparatus for jetting ink drops from nozzle orifices, thereby recording images and characters on recording paper.
An ink jet recording apparatus using piezoelectric vibrators in a vertical vibration mode, which will be hereinafter referred to as recording head, generally comprises a channel unit 1 formed with a large number of nozzle orifices 8 and pressure chambers 7 and a head case 2 for housing piezoelectric vibrators 6, to which the channel unit 1 is attached, as shown in FIGS. 13 and 14.
The channel unit 1 comprises a nozzle plate 3 formed with rows of the nozzle orifices 8, a channel formation substrate 4 formed with rows of the pressure chambers 7 communicating with the nozzle orifices 8, and a vibration plate 5 for blocking lower openings of the pressure chambers 7, the nozzle plate 3, the channel formation substrate 4, and the vibration plate 5 being stacked on each other. The channel formation substrate 4 is formed with an ink reservoir 9 communicating with the pressure chambers 7 via an ink channel 10 for storing ink introduced into the pressure chambers 7.
The head case 2 has a space 12 penetrated up and down for housing the piezoelectric vibrators 6. Each piezoelectric vibrator 6 has a rear end side fixedly secured to a fix board 11 attached to the head case 2 and a tip face fixedly secured to an island part SA on the lower face of the vibration plate 5. In FIG. 13, numeral 14 denotes a frame for protecting the nozzle plates 3, etc.
In the recording head, a drive signal generated by a drive circuit is input to the piezoelectric vibrator 6 via a flexible circuit board 13 for expanding and contracting the piezoelectric vibrator 6 in the longitudinal direction thereof for changing pressure in the pressure chamber 7, thereby jetting ink in the pressure chamber 7 as an ink drop through the nozzle orifice 8.
In an ink jet recording apparatus using the recording head as described above, if print data runs out and the recording head itself is placed in a pause state, ink in the vicinity of the nozzle orifices 8 dries and the nozzle orifices are clogged. Thus, while the print operation is not performed, the recording head is sealed with a cap. However, if the recording head is left sealed with the cap for a long term, the solvent of ink in the proximity of the nozzle orifices 8 is volatilized little by little, the viscosity is increased, and trouble of making it impossible to print at once, degrading the print quality, etc., occurs easily. Further, new ink is supplied in sequence to the nozzle orifices 8 jetting ink drops consecutively by the print operation and the nozzle orifices 8 are hard to be clogged, but the nozzle orifices 8 positioned at the top end, the bottom end, etc., and having an extremely low opportunity of jetting ink drops are easily clogged because ink in the vicinity of the nozzle orifices 8 dries and the viscosity is increased during printing.
To deal with such a problem, as preliminary operation, etc., before print starts, when the recording apparatus is powered on or a print signal is first input, negative pressure is given to each nozzle orifice 8 by a suction pump, whereby ink is forcibly sucked from the nozzle orifices 8, whereby clogging of the nozzle orifices 8 is resolved and the jetting capability of ink is recovered as xe2x80x9ccleaning operation.xe2x80x9d
To perform the cleaning operation, as shown in FIG. 15A, first the margin of a cap 15 shaped like a shallow box opened to the top is abutted against a nozzle face 40 on the lower side of the nozzle plate 3 for sealing. Next, a pump 16 connected to a suction pipe 17 is actuated with a valve 19 of a leak pipe 18 closed for sucking the inside of the cap 15, whereby ink is forcibly sucked from the nozzle orifices 8.
In the recording apparatus, after the ink suction terminates, sucking of the pump 16 is continued with the valve 19 of the leak pipe 18 opened for leaking the inside of the cap 15 and ink accumulating in the cap 15 is discharged. However, in the recording apparatus, when ink in the cap 15 is discharged, air enters the cap 15 from the leak pipe 18 and, bubbles 20 occur in a large amount in the cap 15 as shown in FIG. 15B. The bubbles 20 are deposited on the nozzle face or a back-flow of ink is produced by the action of negative pressure occurring in the recording head or an ink cartridge and the bubbles 20 enter the nozzle orifices 8 and a print failure such that ink drops are not jetted or that the ink drop jetting direction becomes unstable may occur in later print.
It is therefore an object of the invention to provide an ink jet recording apparatus for making it possible to preventing bubbles occurring in a cap after cleaning from adhering to a nozzle face, etc., and stabilize the printing operation.
In order to achieve the above object, according to the present invention, there is provided an ink jet recording apparatus comprising:
a recording head including a pressure chamber to which ink is supplied, a nozzle face provided with a nozzle orifice communicated with the pressure chamber, and an element for generating pressure in the pressure chamber to eject an ink drop from the nozzle orifice;
a cap member for sealing the nozzle face while defining an internal space therein;
a cover member provided in the internal space of the cap member;
a suction member for giving negative pressure to the internal space of the cap member; and
a protrusion formed on the cover member at a portion opposing to the nozzle orifice, so as to face the nozzle face while defining a narrow gap therebetween to cover the nozzle orifice when the cap member seals the nozzle face.
In this configuration, if bubbles occur in the internal space of the cap member at the time of nozzle maintenance such as a cleaning operation, the nozzle orifice is covered by the cover member with the narrow gap in between and thus entering bubbles in the nozzle orifice is almost eliminated. Since ink in the cap member is prevented from back flowing into the nozzle orifice, mixing of inks when a plurality of inks are used is prevented.
Furthermore, since ink is held by the surface tension of liquid sandwiched between the cover member and the nozzle face, so that deposition of bubbles occurring when ink is discharged onto the nozzle face can be effectively prevented without destroying meniscuses. In addition, a jet failure caused by drying the recording head is also decreased. Therefore, a print failure such that ink drops are not jetted or that the ink drop jetting direction becomes unstable is hard to occur in later print.
Preferably, a gap is defined between the cap member and the cover member. An opening is formed within the gap so as to communicate with the suction member.
In this configuration, since the ink is sucked from the opening in the gap while retaining the ink in the nozzle orifice by the cover member when the cleaning operation is performed, a jet failure during the cleaning operation can be avoided by the simple configuration.
Preferably, a top face of a peripheral margin portion of the cap member is higher than a top face of the protrusion.
Preferably, the cover member is provided with a first abutment protrusion which. is to be abutted against the nozzle face to define a gap between the cover member and the nozzle face. The first abutment protrusion is continuously formed so as to surround the protrusion.
The first abutment protrusion may be continuously formed so as to surround the cover member. Here, a second abutment protrusion is formed on a portion surrounded by the first abutment protrusion.
In the above configurations, the ink surface area exposed to the atmosphere is lessened with the cover member covering nozzle orifice with the narrow gap between and, for example, to cover the nozzle orifice with the cover member while the recording apparatus stops, volatilization of ink solvent from the nozzle orifice can be decreased and occurrence of clogging can be prevented. Since the amount of ink held in the gap between the cover member and the nozzle face is lessened with the cover member covering the nozzle orifice with the narrow gap between, deposition of ink onto the nozzle face is lessened and removal of ink on the nozzle face by wiping, etc., is facilitated.
Preferably, the cover member covers the nozzle orifice during quiescent time of the apparatus.
In this configuration, volatilization of ink solvent from the nozzle orifice can be decreased drastically and occurrence of clogging can be decreased remarkably.
Preferably, the cover member is brought into intimate contact with the nozzle face to cover the nozzle orifice.
In this configuration, the hermeticity of the nozzle orifice by the cover member is enhanced and entering bubbles in the nozzle orifice can be prevented effectively.
Preferably, the cover member is made of a material having a stiffness not greater than a stiffness of a material composing the cap member, for example, an elastic material.
In this configuration, the hermeticity of the nozzle orifice by the cover member is enhanced and entering bubbles in the nozzle orifice and back-flow of ink can be prevented more effectively.
Preferably, a face of the cover member to be abutted against the nozzle face includes an inclined face.
In this configuration, the cover member abuts against the nozzle face gradually from the nearest portion of the inclined face to the nozzle face and thus sandwiching ink and bubbles between the nozzle face and the cover member is almost eliminated and back-flow of ink into the nozzle orifice and entering bubbles in the nozzle orifice can be prevented effectively.
Preferably, the suction member gives the negative pressure when the cover member defines the predetermined narrow gap.
In this configuration, ink sucking from the nozzle orifice and ink discharging from the cap member can be executed with the cover member and the cap member held in the same state, so that the structure and control of the: cap member and the cover member can be simplified.
Preferably, a face of the cover member to be abutted against the nozzle face is configured to be a hydrophilic surface.
In this configuration, ink is effectively held between the cover member and the nozzle orifice, so that the adverse effect of destroying meniscuses, etc., is lessened.
Preferably, an inner face of the cap member defining the internal space is configured to be a hydrofuge surface except for the hydrophilic surface.
In this configuration, after ink in the cap member is discharged, ink in the cap member becomes hard to remain.
Preferably, the cover member and the cap member are provided as an integral member.
In this configuration, the structure is comparatively simple and is advantageous in costs and ink leakage, etc., is also hard to occur.


An underwater lamp includes a cylindrical shaped shell with two opposite ends being open, a lens being received at one of the two opposite ends of the shell, and a sink base attaching to the other one of the two opposite ends of the shell. An interior space is defined among the shell, the sink base, and the lens. A light generating element for emitting light is received in the interior space and thermally attached to the sink base. The light generating element has an emitting surface facing the lens. At least one opening is defined in the lamp for fluid flowing into the interior space.

1. Field of the Invention
The present invention relates to an underwater lamp incorporating a solid state lighting element as a light source.
2. Description of Related Art
In recent years, light emitting diodes (LEDs) have been widely used as a light source in underwater applications such as swimming pools, water fountains, rearing ponds, and aquariums.
A typical underwater lamp includes a shell, a lens, and at least one LED. The lens couples to an opening of the shell to seal the shell. Thus the shell and the lens define a hermetic space for receiving the LED therein. The LED includes an LED die facing the lens and a packaging layer encapsulated the LED die. The packaging layer is usually made of transparent macromolecular materials, such as epoxy resin and silica gel. A refractive index of the packaging layer is about 1.5. However, the air between the packaging layer and the lens has a refractive index about 1.0. Snell's Law describes the relationship between the angles and the velocities of the waves. A critical angle is about 42 degree. In other words, the light with an angle of incidence smaller than 42 degrees can pass across the boundary to the space, whilst the light with an angle of incidence not smaller than 42 degrees generates total reflection at the boundary and then travels back to the packaging layer. Only a small portion of the light can pass through the packaging layer into space, and then travels through the lens to the outside. Thus, a utilization efficiency of the light of the LED is relatively low.
Therefore, an improved underwater lamp is desired which overcomes the above-described deficiencies.


A sensor system for detecting concealed blood vessels including a handpiece having a passage for transmitting a laser beam and a detector housing at the distal end of the handpiece, the housing including a common electrode, a plurality of segmented electrodes spaced from the common electrode and between the common electrode and the segmented electrodes a plurality of four sensitive elements having an electrical characteristic which varies with the force applied; and an indicator device responsive to variations in the electrical characteristic for representing the presence of a concealed vessel.

The unexpected encountering of a concealed blood vessel in surgery can have disastrous results. For example, in conventional open heart transmyocardial revascularization (TMR) a channel is created through the heart wall from the outside to the inside of the left ventricle using a laser beam typically from a CO.sub.2 laser. The channel heals quickly on the outside from slight finger pressure so there is no substantial bleeding. The channel remains open on the inside part way through the heart wall so that the heart muscle is supplied with blood by suffusion through the channel from within the ventricle. With a number of such channels the blood supply to the heart muscle can be restored to ensure proper functioning of the heart despite occluded coronary arteries. One problem encountered in TMR is the danger of creating a channel in a path which cuts an unseen vessel in the heart wall. When this occurs substantial bleeding can occur so that a stitch will be required on the outside of the channel at the heart wall to stanch the bleeding. In addition to the obvious danger and extra effort required, this technique also results in a less extensive channel. That is, channels which have such a stitch tend to heal for a longer distance into the heart wall thereby shortening the channel where the blood flows and reducing that area of the heart muscle suffused.

Sensor system for detecting concealed blood vessels


A nonvolatile semiconductor storage device is provided with a memory cell selecting circuit which selects a selected memory cell from a memory cell array; and a write voltage applying circuit, which applies a row write voltage and a column write voltage to a selected word line and a selected bit line, respectively, and applies a row write blocking voltage and a column write blocking voltage to an unselected word line and an unselected bit line, respectively, and applies a write voltage sufficient for writing only on both ends of the selected memory cell. The write voltage applying circuit applies a write compensating voltage, which has a polarity opposite to that of the voltage applied on the both ends of the unselected memory cells other than the selected memory cell, on both ends of the unselected memory cells, while the write voltage is applied to the selected memory cell.

Recently, as a next generation NVRAM (Nonvolatile Random Access Memory) capable of performing a high-speed operation to replace a flash memory, various devices such as a FeRAM (Ferroelectric RAM), an MRAM (Magnetic RAM), and an OUM (Ovonic Unified Memory) have been proposed and they are being developed competitively in view of implementing high performance, high reliability, low cost and process consistency.
In addition, based on these existing techniques, a method of changing electric resistance reversibly by applying a voltage pulse to the perovskite material known for a super colossal magnetoresistance effect is disclosed by Shangquing Liu, Alex Ignatiev et al. in University of Houston, in the following Patent Document 1 and Non-patent Document 1. This is extremely innovative because resistance change over several digits can be implemented at a room temperature without applying an electric field while using the perovskite material known for the super colossal magnetoresistance effect. A resistance nonvolatile RRAM (Resistance Random Access Memory: RRAM is a registered trademark of Sharp Corporation) using a variable resistance element and employing this phenomenon is extremely low in power consumption because it does not need a magnetic field at all unlike the MRAM and easy to be miniaturized and highly integrated and has a considerably large dynamic range of the resistance change as compared with the MRAM, so that it has excellent characteristics such that multilevel storage can be implemented. The basic structure in an actual device is considerably simple such that a lower electrode material, a perovskite-type metal oxide, and an upper electrode material are laminated in this order on a substrate in the vertical direction. In addition, according to the element structure illustrated in Patent Document 1, the lower electrode material is yttrium-barium-copper oxide YBa2Cu3O7 (YBCO) film deposited on a single-crystal substrate of lanthanum-aluminum oxide LaAlO3 (LAO), the Perovskite-type metal oxide is a crystalline praseodymium-calcium-manganese oxide Pr1-xCaxMnO3 (PCMO) film, and the upper electrode material is an Ag film deposited by sputtering. According to the action of the memory element, it is reported that the resistance can be reversibly changed by applying positive and negative voltage pulse of 51 volts between the upper and lower electrodes. The novel nonvolatile semiconductor memory device is implemented by reading the resistance value in this reversible resistance changing action (referred to as the "switching action" occasionally hereinafter).
A nonvolatile semiconductor memory device is constituted such that a memory cell array in which memory cells comprising a variable resistance element consisting of the PCMO film and the like and storing information by the change of the electric resistance of the variable resistance element are arranged in a row direction and column direction like a matrix is formed, and circuits for controlling data programming, erasing and reading for each memory cell in the memory cell array are disposed in the periphery of the memory cell array.
As the constitution of the memory cell comprising the variable resistance element, there is a case where each memory cell comprises a series circuit in which a variable resistance element and a selection transistor are connected in series, and a case where each memory cell comprises only a variable resistance element. The former memory cell is referred to as the 1T/1R type memory cell and the latter memory cell is referred to as the 1R type memory cell. In addition, the memory cell array comprising the 1R type memory cells is referred to as the cross-point type memory cell array.
A constitution example in which the cross-point type memory cell array is formed with the 1R type memory cells to provide a large capacity nonvolatile semiconductor memory device will be described with reference to the drawings hereinafter.
As shown in FIG. 1, a memory cell 2 comprises a variable resistance element 1 only and a cross-point type memory cell array 3 is constituted by arranging the 1R type memory cells 2 like a matrix, and this is the same constitution as disclosed in the following patent document 2. More specifically the memory cell array 3 is constituted such that (m×n) memory cells 2 are disposed at intersections of m (BL1 to BLm) bit lines extending in the column direction and n (WL1 to WLn) word lines extending in the row direction. According to each memory cell 2, the upper electrode of the variable resistance element 1 is connected to the word line, and the lower electrode of the variable resistance element 1 is connected to the bit line. In addition, the relation between the upper electrode and the lower electrode of the variable resistance element 1 may be reversed such that the lower electrode of the variable resistance element 1 is connected to the word line and the upper electrode of the variable resistance element 1 is connected to the bit line.
FIG. 2 shows one constitution example of a nonvolatile semiconductor memory device comprising the cross-point type memory cell array 3. A specific memory cell in the memory cell array 3 corresponding to an address inputted from an address line 9 to a control circuit 6 is selected by a bit line decoder 4 and a word line decoder 5 and each memory action such as data programming, erasing and reading is performed for the memory cell, so that data is stored in the selected memory cell and read from it. The data is inputted or outputted to and from an external device (not shown) through a data line 10.
The word line decoder 5 selects the word line of the memory cell array 3 according to a signal inputted to the address line 9. The bit line decoder 4 selects the bit line of the memory cell array 3 according to an address signal inputted to the address line 9. The control circuit 6 controls each memory action such as programming, erasing and reading for the memory cell array 3.
The control circuit 6 controls the word line decoder 5, the bit line decoder 4, a voltage switch circuit 7, and the programming, erasing and reading action of the memory cell array 3, based on the address signal inputted from the address line 9, a data input (at the time of programming) inputted from the data line 10, and a control input signal inputted from a control signal line 11. In the example shown in FIG. 2, the control circuit 6 is provided with a function as a general address buffer circuit, data input/output buffer circuit, and control input buffer circuit though they are not shown.
The voltage switch circuit 7 switches each voltage of the word line and bit line required for the reading action, programming action and erasing action of the memory cell array 3 according to an action mode and supplies it to the memory cell array 3. Here, reference character Vcc designates a power supply voltage of the nonvolatile semiconductor memory device of the present invention, reference character Vss designates the ground voltage, reference character Vr designates a reading voltage, reference character Vp designates a programming supply voltage (programming voltage) and reference character Ve designates an erasing supply voltage (erasing voltage is −Ve). In addition, the data reading is carried out from the memory cell array 3 through the bit line decoder 4 and the reading circuit 8. The reading circuit 8 determines the state of the data and transfers its result to the control circuit 6 to be outputted to the data line 10.
In the memory cell array comprising the 1T/1R type memory cells, when a memory cell for which the data reading, programming and erasing is performed is selected, a predetermined bias voltage is applied to a selected word line and a selected bit line to turn on the selection transistor in the selected memory cell connected to both selected word line and selected bit line, so that a reading and programming/erasing current flows in only the variable resistance element in the selected memory cell.
Meanwhile, according to the memory cell array 3 comprising the 1R type memory cells 2, when a memory cell for which the data reading is performed is selected, since the same bias voltage is applied also to memory cells connected to the word line and bit line shared with the memory cell to be read, the reading current flows in other memory cells. The reading current flowing in the selected memory cells selected by the row or column is detected as the reading current of the memory cell to be read by column selection or row selection. According to the memory cell array 3 comprising the 1R type memory cells 2, although the reading current also flows in the memory cells other than the memory cell to be read, it has advantages that its memory cell structure is simple and a memory cell area and memory cell array area are small.
FIGS. 1 and 3 show a conventional example of a process in which a voltage is applied to each part at the time of data reading action in the memory cell array 3 comprising the 1R type memory cells 2. When the data of the selected memory cell is read, the selected word line connected to the selected memory cell is kept at the ground potential Vss and a reading voltage Vr is applied to unselected word lines and all the bit lines during a reading period Tr. During the reading period Tr, since the voltage difference of the reading voltage Vr is generated between the selected word line and all the bit lines, a reading current corresponding to its electric resistance, that is, its memory state flows in the variable resistance element of the selected memory cell, so that the data stored in the selected memory cell can be read. In this case, since the reading current corresponding to the memory state of the selected memory cell connected to the selected word line flows in each bit line, when the reading current flowing in a certain selected bit line is selectively read on the bit line side, the data in the specific selected memory cell can be read. Here, the relation of the bit line and the word line may be switched such that the reading current flowing in each word line is selectively read on the word line side.
FIGS. 4 and 5 show a conventional example of a process in which a voltage is applied to each part in the memory cell array 3 comprising the 1R type memory cells 2 at the time of data programming action. In addition, FIGS. 6 and 7 show a conventional example of a process in which a voltage is applied to each part in the memory cell array 3 comprising the 1R type memory cells 2 at the time of data erasing action. In addition, the following non-patent document 2 discloses a specific voltage bias condition applied to the word line and bit line at the time of data reading action and data programming action for the cross-point type memory cell array.
As shown in FIGS. 4 and 5, when data is programmed in a selected memory cell M0, while the selected word line connected to the selected memory cell is kept at the ground potential Vss, a programming blocking voltage Vp/2 is applied to the unselected word lines and unselected bit lines and the programming voltage Vp is applied to the selected bit line in the programming period Tp.
In the programming period Tp, the voltage difference of the programming voltage Vp is generated between the selected bit line and the selected word line, so that the resistance of the variable resistance element of the selected memory cell is changed. In addition, at the time of programming action of the selected memory cell, the voltage Vp/2 that is the half of the programming voltage Vp is applied to each variable resistance element of the first unselected memory cells M1 connected to the word line shared with the selected memory cell, and the second unselected memory cells M2 connected to the bit line shared with the selected memory cell for the programming period Tp.
When data is erased from the selected memory cell M0, the voltage having the opposite polarity to that in the programming is applied to the variable resistance element of the selected memory cell M0. As shown in FIGS. 6 and 7, while the selected bit line connected to the selected memory cell is kept at the ground potential Vss, an erasing blocking voltage (−Ve/2) is applied to the unselected bit lines and the unselected word lines and the erasing voltage (−Ve) is applied to the selected word line in the erasing period Te.
In the erasing period Te, the voltage difference of the erasing voltage Ve is generated between the selected bit line and the selected word line, so that the resistance of the variable resistance element of the selected memory cell is changed. In addition, at the time of erasing action of the selected memory cell, the voltage (−Ve/2) that is the half of the erasing voltage (−Ve) is applied to each variable resistance element of the first unselected memory cells M1 connected to the word line shared with the selected memory cell, and the second unselected memory cells M2 connected to the bit line shared with the selected memory cell for the erasing period Te.
Here, the relation between the bit line and the word line may be exchanged in the programming action and the erasing action.
The variable resistance element constituting the 1R type memory cell includes a phase-change memory element in which a resistance value is changed by the change in crystalline/amorphous state of chalcogenide compound, an MRAM element using a resistance change by a tunnel magnetic resistance effect, a memory element of a polymer ferroelectric RAM (PFRAM) in which a resistance element is formed of a conductive polymer, a RRAM element causing a resistance change by an electric pulse application and the like.    Patent document 1 U.S. Pat. No. 6,204,139    Patent document 2 Japanese Unexamined Patent Publication No. 2002-8369    Non-patent document 1: Liu, S. Q. et al. "Electric-pulse-induced reversible Resistance change effect in magnetoresistive films", Applied Physics Letter, Vol. 76, pp. 2749-2751, in 2000.    Non-patent document 2: Y. Chen et al. "An Access-Transistor-Free (0T/1R) Non-Volatile Resistance Random Access Memory (RRAM) Using a Novel Threshold Switching, Self-Rectifying Chalcogenide Device", IEDM Technical Digest, Session 37, in 2003.
When data programming or erasing is performed for the cross-point type memory cell array comprising the 1R type memory cell having the variable resistance element, a bias voltage is applied to the variable resistance element of the selected memory cell to change its resistance to perform the programming or erasing. In this case, the voltage that is the half of the programming voltage or erasing voltage is applied to each variable resistance element of the unselected memory cells connected to the bit line shared with the selected memory cell and the unselected memory cells connected to the word line shared with the selected memory cell. The voltage that is the half of the programming voltage or erasing voltage is generated when the programming blocking voltage or the erasing blocking voltage is applied to the unselected word lines and unselected bit lines so that the programming voltage or erasing voltage is not directly applied to the unselected memory cells in order to prevent programming or erasing in the unselected memory cells for which the programming or erasing is not to be performed. That is, in order to prevent programming or erasing in the unselected memory cells, a low voltage that is insufficient for the programming or erasing action is applied.
However, the inventors of this disclosure have found that in the case where the PCMO film (Pr1-xCaxMnO3) that is one of the Perovskite type metal oxide is used as the variable resistance element, when a voltage pulse having a voltage magnitude that is not more than the half of the programming voltage and the same polarity as the programming voltage is continuously applied to the variable resistance elements of the unselected memory cells, as the number of applications is increased, the resistance value of the variable resistance element is gradually changed. That is, it means that while the programming action or the erasing action is repeated in the cross-point type memory cell array unexpected error programming or error erasing is generated (this phenomenon is referred to as the "programming disturbance" or "erasing disturbance" hereinafter) in the unselected memory cells other than the memory cell in which the programming or erasing is performed.
FIG. 8 shows the behavior of the resistance change when five kinds of voltage pulses having different voltage magnitudes, voltage polarities, applying methods are applied to the variable resistance element whose initial state is in a high resistance state. As shown in FIG. 8, when a voltage pulse having a positive polarity (whose pulse width is 100 ns) is continuously applied to the upper electrode of the variable resistance element (shown by a curved line pointed by arrow A), the resistance value of the variable resistance element whose initial state was in the high resistance state is reduced as the number of pulse applications is increased. In addition, when a voltage pulse having a negative polarity (whose pulse width is 100 ns) is continuously applied (shown by a curved line pointed by arrow B), the resistance value of the variable resistance element whose initial state was in the high resistance state is increased as the number of pulse applications is increased. In addition, as for the voltage pulse having the negative polarity, although the resistance value tends to be increased as the number of pulse applications is increased, since the fact that the high resistance state further becomes high resistance state means that the difference from the low resistance state becomes great, this is no problem in view of characteristics. Meanwhile, the problem is that the resistance value is decreased when the voltage pulse having the positive polarity is applied. In FIG. 8, the curved line A designates the application of the voltage pulse having the positive polarity whose voltage magnitude is the half of the programming voltage, and the curved line B designates the application of the voltage pulse having the negative polarity whose voltage magnitude is the half of the programming voltage.
Here, the voltage pulse having the positive polarity means the state in which the reference ground voltage is applied to the lower electrode and a positive voltage pulse (having a voltage magnitude of 1V, for example) is applied to the upper electrode. In addition, the voltage pulse having the negative polarity means the state in which the reference ground voltage is applied to the upper electrode and a positive voltage pulse (having a voltage magnitude of 1V, for example) is applied to the lower electrode. Furthermore, the measuring condition of the resistance value shown in FIG. 8 has been calculated from a current value when the reference ground voltage is applied to the lower electrode and 0.5V is applied to the upper electrode. In addition, the horizontal axis in FIG. 8 designates the relative number of applications of the voltage pulse in a logarithmic manner.
FIG. 9 shows the behavior of the resistance change when six kinds of voltage pulses having different voltage magnitudes, voltage polarities, and application methods are applied to the variable resistance element whose initial state is in the low resistance state. In addition, the measuring condition of the resistance value shown in FIG. 9 has been calculated from the current value when the reference ground voltage is applied to the lower electrode and 0.5V is applied to the upper electrode. In addition, the horizontal axis in FIG. 9 designates the relative number of applications of the voltage pulse in a logarithmic manner. As shown in FIG. 9, it can be seen that when the initial state is the low resistance state, the resistance change is small as compared with the case where the initial state is the high resistance state. In FIG. 9, a curved line A designates the application of a voltage pulse having a positive polarity whose voltage magnitude is one fourth of the programming voltage, and a curved line B designates the application of a voltage pulse having a positive polarity whose voltage magnitude is the half of the programming voltage.
As a result, it has become clear that the programming disturbance phenomenon in which the resistance state is changed from the initial state in accordance with the number of applications is caused because the voltage pulse whose voltage magnitude is the half of the programming voltage or less and polarity is the same is applied to each variable resistance element of the unselected memory cells connected to the bit line shared with the selected memory cell, and the unselected memory cells connected to the word line shared with the selected memory cell during the programming period for the selected memory cell. Especially, since the programming disturbance phenomenon is obvious on the variable resistance element whose initial state is high resistance state, the problem that the resistance value of the variable resistance element is decreased and the resistance difference between the high resistance state and the low resistance state becomes small and its reading margin is lowered is raised. In addition, since the repeating frequency of the programming actions at the low voltage for the unselected memory cells is increased in the large capacity memory cell array having many word lines and bit lines, the disturbance is caused frequently, and as the worst case, the stored data is completely erased and it cannot be read. In addition, the same is true in the erasing action.
Especially, when the programming blocking voltage that is the half of the programming voltage or the erasing blocking voltage that is the half of the erasing voltage is applied to the unselected word lines and the unselected bit lines during the programming period or erasing period, since the voltage whose voltage magnitude is the half of the programming voltage or erasing voltage and polarity is the same is applied to each variable resistance element of the unselected memory cells connected to the bit line shared with the selected memory cell, and the unselected memory cells connected to the word line shared with the selected memory cell, the programming disturbance phenomenon becomes more obvious.
In addition, when two kinds of programming blocking voltages that are one third and two thirds of the programming voltage, or two kinds of erasing blocking voltages that are one third and two thirds of the erasing voltage are applied to each of the unselected word lines and unselected bit lines during the programming period or the erasing period, the voltage whose voltage magnitude is one third of the programming voltage or erasing voltage and polarity is the same is applied to each variable resistance element of the unselected memory cells connected to the bit line shared with the selected memory cell, and the unselected memory cells connected to the word line shared with the selected memory cell, and the voltage whose voltage magnitude is one third of the programming voltage or erasing voltage and polarity is opposite is applied to each variable resistance element of the unselected memory cells connected to the word lines and bit lines that are not connected to the selected memory cell. In this case, since the number of third unselected memory cells, to which the voltage having the opposite polarity is applied, is huge in the large capacity memory cell array having many word lines or bit lines, when the programming disturbance phenomenon or the erasing disturbance phenomenon due to the application of the voltage having the opposite polarity could be generated, care should be taken because the application number is large although the applied voltage is as low as one third of the programming voltage or erasing voltage as compared with the case the applied voltage is the half thereof. In addition, the polarity in programming and erasing is changed due to the material, film quality, composition, temperature, structure, programming/erasing time and the like of the variable resistance element in some cases.
One or more aspects of the present invention has been made in view of the above problems and it is an object of one or more aspects to provide a nonvolatile semiconductor memory device in which resistance change in the unselected memory cells due to the programming or erasing action for the cross-point type memory cell array comprising the variable resistance elements is prevented and the reading margin is large.


A method for forming a semiconductor structure. The method includes providing a semiconductor structure including a semiconductor substrate. The semiconductor substrate includes (i) a top substrate surface which defines a reference direction perpendicular to the top substrate surface and (ii) a semiconductor body region. The method further includes implanting an adjustment dose of dopants of a first doping polarity into the semiconductor body region by an adjustment implantation process. Ion bombardment of the adjustment implantation process is in the reference direction. The method further includes (i) patterning the semiconductor substrate resulting in side walls of the semiconductor body region being exposed to a surrounding ambient and then (ii) implanting a base dose of dopants of a second doping polarity into the semiconductor body region by a base implantation process. Ion bombardment of the base implantation process is in a direction which makes a non-zero angle with the reference direction.

In a conventional process for changing threshold voltage of a transistor on a chip, the semiconductor body of the transistor can be doped with dopants by ion implantation. Control of the value of the threshold voltage is critical to good performance and low power consumption of the circuits employing the transistors. In Multi-Gate FETs (MuGFETs), such as FinFETs, Tri-Gate, and other related structures, doping the MuGFET body is best performed with angled implants at some point following fin (body) formation, as this allows total dose delivery to the body to be minimally affected by incidental variations in fin dimensions. When multiple threshold-voltages are required for the same polarity (e.g. n-type) FET, it is desirable that the spacing between two FETs with differing threshold voltages can be as close, physically, as two such FETs having the same threshold voltage; this provides for high circuit density and low manufacturing cost. Unfortunately, this spacing is such that the blocking resist used to allow such threshold-adjusting implants into one FET and not an adjacent one, prohibits the use of tilted, or angled, implants that are needed to dope the fins in a uniform manner. Therefore, there is always a need for a method of changing the threshold voltage of a transistor that is better than that of the prior art.

Methods of changing threshold voltages of semiconductor transistors by ion implantation

International Business Machines Corporation


A robotic tool picks and places a clinging part in an assembly. Two gripper jaws each have gripper fingers spaced apart from each other by a central spacing. The gripper jaws are movable between a grip position and a release position. The robotic tool also has an ejector. The ejector has a part pusher that is cling resistant and movable in the central spacings between a retracted position, and an eject position in which the cling resistant part pusher ejects the clinging part.

Recirculation filters used in disc drives are typically formed of fibers that are permanently electrostatically charged to attract and hold small particles. Recirculation filters tend to cling to fingers, tools and other objects used in assembling disc drives. The clinging tends to make it difficult to insert the recirculation filters in slots in a disc drive assembly without inadvertently misplacing the filters which tend to cling to and follow fingers or tools as they are withdrawn after insertion. There is a desire to automate the insertion of recirculation filters and other clinging parts, however, this is difficult to do reliably because of the possibility of misplacement of the filter.
A method and apparatus are needed to automatically pick and place a clinging part such as a recirculation filter in a reliable manner.


Various embodiments of the disclosed technology present a structural foundation for volumetric flow reconstructions for expiratory modeling enabled through multi-modal imaging for pulmonology. In some embodiments, this integrated multi-modal system includes infrared (IR) imaging, thermal imaging of carbon dioxide (CO2), depth imaging (D), and visible spectrum imaging. These multiple image modalities can be integrated into flow models of exhale behaviors enable the creation of three-dimensional volume reconstructions based on visualized CO2 distributions over time, formulating a four-dimensional exhale model which can be used to estimate various pulmonological traits (e.g., breathing rate, flow rate, exhale velocity, nose/mouth distribution, tidal volume estimation, and CO2 density distributions). Various embodiments also enable the accurate acquisition of numerous pulmonary metrics that are then stored within distributed systems for respiratory data analytics and feature extraction through deep learning embodiments.

Evaluating objective reconstructions of vortex behaviors within turbulent flows is an open problem within computational fluid dynamics due to reference frame dependent flow behaviors. Recent flow visualization techniques have proposed visualizations of vortex behavior through optimally local reference frame optimization for reconstructing complex vortex flows. Other flow reconstruction techniques attempt to build models of complex gas flows through refraction-based Background-oriented Schlieren methods or through Light-Path approximations captured through multiple imaging devices using visible light wavelengths. These techniques represent a divergence from traditional tracer-based method such as Particle Image Velocimetry (PIV) that requires discrete cross-correlation of discrete tracer particles which is impractical for our clinical domain.
Accurate non-contact respiratory analysis has recently gained popularity within the domains of wireless signal processing and computer vision to automate and significantly broaden the class of quantitative respiratory metrics that non-contact methods can reliably address. Numerous techniques exist for both contact and non-contact respiratory analysis. However, traditional methods indirectly infer breathing behaviors or utilize correlation functions for respiratory analysis. Techniques within computer vision have introduced thermal infrared cameras with spectral filters for CO2 imaging for respiratory analysis. However, the applicability of these techniques to comprehensive respiratory analysis is severely underdeveloped and the adoption of these methods has been very limited.
This is due to three primary factors shared between most prior vision-based techniques: (1) prior objectives only emphasize simple quantitative measures such as respiratory rate within limited Regions of Interest (RoI) and strength, limiting potential high-level behavioral analysis, (2) prior devices lack the sensitivity required to monitor subtle density variances and complex flow behaviors for identifying respiratory conditions, and (3) frame-rate limitations inhibit the ability to accurately capture rapid and turbulent respiratory behaviors. As such, there are a number of challenges and inefficiencies created in traditional respiratory analysis systems. It is with respect to these and other problems that embodiments of the present invention have been made.

Non-contact breathing activity monitoring and analyzing through thermal and CO2 imaging

The Regents of the University of Colorado


The present invention relates to a polymer electrolyte membrane that includes a porous polymer matrix and an ion conducting polymer coating membrane formed in the outer surface of single fibers in the porous polymer matrix. The polymer electrolyte membrane can provide excellent mechanical strength, is not deteriorated by heat even at a temperature higher than 100°C., can provide excellent ion conductivity even at non-humidified state. Thus it is suitable for use in a fuel cell that is operated at high temperatures.

1. Field of the Invention
The present invention relates to a polymer electrolyte membrane and a fuel cell that employs the same. In particular, the present invention relates to a polymer electrolyte membrane that has excellent thermal properties and mechanical stability, and a fuel cell employing the same.
2. Description of the Related Art
A fuel cell is a device that generates electricity by a chemical reaction between the fuel and oxygen. A fuel cell can be used to provide electric power in small electronic products such as portable devices, as well as to provide electric power for industrial, household and automotive use.
Fuel cells can be classified into categories based on the type of the electrolyte to be used, including polymer electrolyte membrane fuel cell (PEMFC), phosphoric acid fuel cell (PAFC), molten carbonate fuel cell (MCFC), and solid oxide fuel cell (SOFC), etc. The operating temperature of the fuel cell and the composition of its components vary depending on the type of electrolyte to be used.
Fuel cells can be classified based on the method of supplying fuel. These categories include an exterior reforming type that converts a fuel to a hydrogen enriched gas through a fuel reformer, a direct fuel feeding type that directly supplies a fuel in a gas or a liquid state to an anode, or an interior reforming type.
An example of the direct fuel feeding type is a direct methanol fuel cell (DMFC). In general, the DMFC uses an aqueous methanol solution as a fuel, and a hydrogen ion conducting polymer electrolyte membrane as an electrolyte. Accordingly, the DMFC is a type of PEMFC.
Although PEMFCs are small and lightweight, they can provide high output density. Furthermore, by using the PEMFC, a system for generating electricity becomes simple to construct.
A PEMFC typically comprises an anode (fuel electrode), a cathode (oxidant electrode), and a polymer electrolyte membrane placed between the anode and the cathode. The anode of the PEMFC is provided with a catalyst layer to promote oxidation of a fuel, and the cathode of the PEMFC is provided with a catalyst layer to promote reduction of the oxidant.
The fuel that is supplied to the anode of a PEMFC typically includes hydrogen, hydrogen-containing gas, mixed vapor of steam and methanol, and aqueous methanol solution, etc. The oxidant that is supplied to the cathode of the PEMFC typically includes oxygen, oxygen-containing gas or air.
A fuel is oxidized to form a hydrogen ion and an electron at the anode of the PEMFC. The hydrogen ion is transferred to the cathode through an electrolyte membrane, and the electron is transferred to an outer circuit (load) through a wire (or a collector). At the cathode of the PEMFC, the hydrogen ion transferred through the electrolyte membrane, the electron transferred from the outer circuit through a wire (or a collector), and oxygen are combined to form water. The flow of the electron through the anode, the outer circuit, and the cathode is electricity.
In the PEMFC, the polymer electrolyte membrane plays not only a role as an ion conductor to transfer hydrogen ions from the anode to cathode, but also a role as a separator to block the physical contact of the anode and the cathode. Accordingly, the properties required for the polymer electrolyte membrane are excellent ion conductivity, electrochemical stability, strong mechanical strength, thermal stability at operating temperature, easy thin film making, etc.
The material of the polymer electrolyte membrane generally includes a polymer electrolyte such as a sulfonate perfluorinated polymer such as Nafion® that has a backbone consisting of a fluorinated alkylene, and a side chain that consists of a fluorinated vinyl ether that has a sulfonic acid group at the terminal end. Such a polymer electrolyte membrane contains a sufficient quantity of water and thus shows excellent ion conductivity.
However, when operating a PEMFC at an operating temperature higher than 100° C., such an electrolyte membrane loses its function since its ion conductivity seriously declines due to the loss of water by evaporation. This problem makes it almost impossible to operate the PEMFC using such a polymer electrolyte membrane at atmospheric pressure and a temperature higher than 100° C. Thus, existing PEMFCs have been operated at a temperature lower than 100° C., for example at about 80° C.
Methods to increase the operating temperature of the PEMFC to a temperature of 100° C. or higher including mounting a humidifying apparatus on the PEMFC, operating the PEMFC at pressurized condition, and using a polymer electrolyte that does not require humidification have been suggested.
When the PEMFC is operated under pressurized conditions, the operating temperature can be elevated since the boiling point of water is elevated. For example, when the operating pressure of the PEMFC is 2 atm, the operating temperature can be elevated to about 120° C. However, when a pressurizing system is applied or a humidifying apparatus is mounted to the device, not only do the size and weight of the PEMFC increase, but the total efficiency of the generating system decreases. Accordingly, in order to maximize the application range of the PEMFC, the "non-humidified polymer electrolyte membrane" which is a polymer electrolyte membrane that provides excellent ion conductivity without humidification, is needed.
An example of a non-humidified polymer electrolyte membrane is disclosed in Japanese Patent Publication No. 1999-503262. In this patent, several materials, such as polybenzoimidazole, sulphuric acid or phosphoric acid doped polybenzoimidazole, etc. are described as a non-humidified polymer electrolyte.

Polymer electrolyte membrane and fuel cell employing the same


An integral stationary arcing contact and arc runner for electrical switching apparatus is formed by an electrically conductive member secured to the line conductor adjacent the stationary main contact thereby providing a joint free path for the arc to pass from the arcing contact to the arc runner. Preferably, the electrically conductive member is a sheet metal member having a base section secured to the line conductor, an arcing contact section adjacent the stationary main contact and extending generally perpendicular to the line conductor and a runner section extending at an obtuse angle to the arcing contact section toward the arc chute. A support member between the arcing contact section and the housing transmits reaction forces imposed by the moving conductor assembly on the sheet metal member into the housing.

1. Field of the Invention
This invention relates to electrical switching apparatus having arcing contacts which open after the main contacts to protect the main contacts from damage and wear caused by arcing. More particularly, it relates to the construction of the arc runner which transfers the arc from the arcing contacts to an arc chute where it is extinguished.
2. Background Information
Electrical switching apparatus for power distribution systems includes devices such as, for instance, circuit breakers, network protectors, transfer switches and disconnect switches. Power circuit breakers are typically used to connect a power distribution network to a power source. Such power circuit breakers must be able to withstand high currents for a period of time without tripping to give circuit breakers in the network time to respond and isolate the fault thereby localizing disruption of service. Thus, by the time the power circuit breaker responds, it may have to interrupt a sizable current. This results in the drawing of an arc as the circuit breaker contacts open. It is known to provide an arc chute adjacent to the opening path of the circuit breaker contacts. The arc chute is constructed of a number of spaced plates extending transverse to the arc. As the contacts open, the arc is transferred by electromagnetic forces to the arc plates which cool the arc and increase the arc voltage by breaking it up into sections, both of which help to extinguish the arc.
In a power circuit breaker with "heel-toe" contact parting action, the arcing end of a copper contact finger ("toe") comes in contact with a stationary copper arcing contact ("toe block") after the breaker has begun to open. The main contacts then part followed by parting of the arcing contacts resulting in the striking of an arc between the copper arcing contacts. This protects the main contacts from damage due to arcing. Typically, an arc runner is mounted on top of the stationary arcing contact in order to provide a surface for the arc to run toward the arc chute. The arc is formed on the arcing contact and must travel across the joint to the arc runner. At low currents, the electromagnetic force on the arc may not be adequate to force the arc to cross this joint. One end of the arc may remain on the stationary arcing contact, severely eroding the contact. If the arc does not move onto the arc runner it will not reach the arc chute in time for the breaker to interrupt.
Also, when the arc is created on the arcing contact, it is more likely to travel along a sharp edge or corner of the part. Arc runners often have a slot up the center of the part to provide an attractive edge for the arc to run along. The edge of the slot encourages the arc to travel up the center of the arc runner, engaging the arc chute near the center and extinguishing the arc sooner. At lower current levels, the arc may be attracted to the laterally extending edge of the stationary arcing contact instead of the slot in the arc runner. This may prevent the arc from running up the arc runner or cause the arc to run to one side of the pole where it may track along the inside wall of the arc chamber.
There is a need therefore for electrical switching apparatus with an improved arrangement for extinguishing arcs generated during current interruption.
There is a more specific need for such an improved arrangement for directing the arc from the stationary arcing contact into an arc chute.

Electrical switching apparatus having arc runner integral with stationary arcing contact


A magnetic tool organizing system including a base substrate having an inner base substrate area, a base substrate front surface and a base substrate rear surface; at least one magnetic element positioned at least partially within the inner base substrate area. In one embodiment, a cover element, including a rim portion, is positioned adjacent the at least one magnetic element, and the rim portion of the cover element is at least partially embedded within an area of the base substrate In another embodiment, the magnetic element is embedded in the inner base substrate area. Methods of manufacturing a magnetic tool organizing system are also disclosed.

1. Field of the Invention
The present invention relates generally to tool and component part organization systems and structures and, in particular, to magnetic-based tool and component part organization systems.
2. Description of Related Art
In order to provide organization to one's work area, some type of system or structural arrangement is often desired. For example, as a person collects tools and tool parts over a period of time, he or she may require some manner of organizing and positioning these tools and parts for easy access and recall. One example of a tool holding device is found in U.S. Pat. No. 5,743,394 directed to a magnetic socket holder. While the socket holder disclosed in this reference uses magnetic force, other tool attachment and organization means are known in the art. For example, in a typical tool chest, a slideable drawer with segregated compartments is used. For tool organization structures that hang on the wall and are oriented in a vertical plane, clips or other attachment devices can be used. Examples of other magnet-based organizing systems may be found in U.S. Pat. Nos. 6,039,178; 6,431,373; 6,092,655; 5,855,285; 4,337,860; 3,726,393; 3,405,377; and 1,712,473. However, such prior art systems have many drawbacks.
When using mechanical clips to hold tools and tool components in place, such clips are subject to breaking or they require excessive force to remove the tool from the clip. Tool chest trays are often inconvenient since a user will often place multiple and stacked tools and other construction components within the tray, which, in turn, leads to additional disorganization and inability to easily locate the desired tool or component.
Typical magnetic tool organization systems use economical magnets, such as flexible magnets or ceramic magnets, that do not have sufficient holding power to allow storage of many tools in a vertical orientation, such as on a wall, a vertical pegboard, the side of a metal toolbox, etc. While ceramic magnets do offer more holding power than flexible magnets, products utilizing ceramic magnets are still deficient in holding power for heavy tools and are expensive to manufacture due to the inherent fragility of the ceramic magnets, which leads to product loss during manufacture. Further, this inherent fragility causes a substantially less than desired product life because of breakage during normal use. Also, prior art structures and arrangements have poor product life, are subject to breakage and loss and are difficult to manufacture.

Magnetic tool organizing system and method of manufacturing a magnetic tool organizing system


An apparatus for controlling illumination of a fluorescent lamp is disclosed which includes two transformers for heating cathodes of the fluorescent lamp. Also included are two ballasts for ballasting the fluorescent lamp having an input adapted to receive a source of A-C power and an output coupled to the fluorescent lamp. The ballasts provide power to the fluorescent lamp in excess of a normal rated power of the fluorescent lamp. The apparatus further includes a flasher relay for repeatedly cycling power at a cycling rate between power on and power off to the fluorescent lamp coupled to the output of the ballasts and to the fluorescent lamp, thereby causing the fluorescent lamp to flash at a flashing rate with a flashing intensity of light output which is greater than the flashing intensity of output of the fluorescent lamp under normal continuous operation. A remote control sensor may be connected to the apparatus to switch the apparatus between the flashing cycle and normal continuous operation. The remote control sensor may also be used to the control the flashing rate of the flasher relay. An audio modulation apparatus may also be operatively connected to the flasher relay to control the flashing rate of the apparatus with an audio signal.

1. Field of Invention
This invention pertains to the art of methods and apparatuses for the control of electric discharge lamps, and more specifically to methods and apparatuses for the control of a fluorescent lamp that causes the lamp to periodically flash.
2. Description of the Related Art
In the past, control circuitry has been employed to cause a fluorescent lamp to flash by cycling the primary of the lamp ballast reactor at a desired cycle rate by turning the power "on" and "off" at the desired cycle rate. This results in the average lamp wattage output being below its normal wattage rating, generally in the 40%-60% range. This in turn results in a corresponding reduction in lumen output. In such flashing, the intensity or light output of each flash is approximately the same as its normal continuous light output. Additionally, the cathodes of the fluorescent lamp must be kept continuously heated in order to avoid early lamp "end blackening" and short lamp life.
Applicant recognized the need to create a flashing circuit that allowed the fluorescent lamp to be operated at higher wattage without detrimental effects to the life of the fluorescent lamp.
The present invention contemplates a new and improved control of a fluorescent lamp which is simple in design, effective in use, and overcomes the foregoing difficulties and others while providing better and more advantageous overall results.

Apparatus for controlling illumination of a fluorescent lamp

National Biological ETA Systems Corporation


A method of manufacturing a seat that includes the steps of attaching adjacent upholstery panels with a locator strip and attachment strip sandwiched therebetween. The attachment strip includes an enlarged edge portion that engages clips in a molded foam seat backing. At least a portion of the locator strip is torn away along a line of perforations formed therein.

Conventional vehicle seats generally include one or more backing members, and a plurality of upholstery panels positioned thereon. Various processes and designs have been developed over the years for attaching the upholstery material onto the backing. Automated methods are known whereby the upholstery material is positioned by a machine onto the pre-formed backing material, as well as methods wherein an operator attaches the upholstery material manually.
In one common manual technique, an operator positions the upholstery material and secures the same to the backing material by sliding a retaining member attached to adjacent pieces of upholstery material into a receiving groove in a foam cushion or backer. This process allows the upholstery to be attached to the backer relatively quickly and easily, however it is necessary to fold one of the adjacent upholstery panels double, i.e. backwardly against the opposing piece of upholstery material so that the operator can visually determine the appropriate orientation and positioning of the retaining member for receipt in the groove.
In another known design, a robotic machine is utilized to position upholstery material proximate a mold in which a formable foaming material is injected, which solidifies to create the backer for the seat. The solidification of the foam material adheres to a retaining member extending between the adjacent upholstery panels. In this design, the robotic device grasps a strip that is inserted and attached between the adjacent panels, which may be torn away along a perforated line after the molding process is complete.


In a force transmission belt or a conveyor belt, in particular a toothed belt, having a main belt body or a cord embedding zone made of a customary belt elastomer (20), in particular of polyurethane, and having at least one tension member of carbon cord (10; 1, 2) embedded in the elastomer (20), a material (30) is provided, which is enclosed between the strands (1) of the cord (10), and which could have been introduced by applying coatings onto strands (1) of the cord (10), for example. Said filler material (30), which is different from the elastomer (20) in which the carbon cord is embedded, consists of a composition of hydroxyaromates and aldehydes, without any addition of rubber or rubber latex, a hydroxyaromates-aldehyde resin that does not contain rubber, reaction products from hydroxyaromates or hydroxyaromates-aldehyde compositions with isocyanates or isocyanate prepolymers, and/or aromatically or polyaromatically cross-linked polyurethanes, or contains these substances. The elasticity of the carbon cord (10; 1, 2) is thus successfully maintained, good integration in the belt elastomer (20) is ensured, and the service time of the belt is substantially increased.

It is known in belt technology that tension-member systems can be embedded into a surrounding belt material in order to absorb tensile powers and in order to provide reempowerment. The belt material of the belt base is often composed of synthetic or other rubber, or of other polymers. Tension-member systems often used comprise cables made of synthetic fibers or steel, another term used for these in this connection being cord. A cable or cord can have been formed by various processes, which can involve one or more combined-group-twisting (laying) or braiding processes. Irrespective of the structure of the cable, a feature of all cords is that there are interstices within the volume of the cord. The manner of filling of said interstices greatly affects the properties of the tension-member system.
U.S. Pat. No. 3,138,962 B discloses a power-transmission belt in which, during the casting of the molding of the belt structure, the cord interstices are completely filled by a liquid castable polyurethane into which the cord is embedded. Although this initially leads to good binding of the cord into the material, there is a marked reduction of the lifetime of the belt under load. The belt urethane generally has a high coefficient of friction, and this type of polyurethane as fill material for the cord therefore leads to a loss of elasticity, to low flexibility, and to cord strand breakage caused by stiffening. This effect is particularly marked for carbon fibers and aramid fibers, since these are fine and are easily broken under load if they cannot slip over one another to a certain extent.
EP 0 841 500 B1 discloses a toothed belt made of an elastic polyurethane material which has tension members made of carbon-fiber cord, where the polyurethane material of the belt base penetrates into only a portion of the cord interstices, at least with about 0.2 mg of belt material per mm 3 of cord volume. The carbon cord can already have a size applied by the producer and made by way of example of an epoxide, the intention here being to prevent breakage of the fibers but not to seal the cord completely, but instead to leave spandrel-shaped interstices. A disadvantage is that the cord is bonded purely mechanically into the surrounding belt polyurethane, which retains its high coefficient of friction and has no contact to any other binding material.
In contrast, WO 2011/068729 A1 discloses that a tension-member system which has been embedded into the elastic structure of a belt and which by way of example can be a carbon cord can be provided with urea-crosslinked polyurethane impregnation that fills from 20 to 99% of the interstitial volume, and that the cord thus pretreated can then be embedded into an elastomeric belt structure. The polyurethane cast around the cord here can flow into the remaining interstices. The fill material made of urea-crosslinked polyurethane is produced via crosslinking of a polyurethane prepolymer with diamines or water. The specific fill material is intended to protect the cord fibers from breakage and give the entire cord substantially better elasticity and good flexural properties. A disadvantage is that the fill material for the cord interstices is cured separately prior to the embedment process and therefore does not bond fully satisfactorily to the surrounding belt elastomer.


The present invention relates to a process for preparing polydextrose by using a microdevice. It further relates to the use of a microdevice for the polycondensation reactions.

In order to continually improve physical standards of living for greater number of people, it is necessary to achieve more results with fewer resources. Therefore there is the tendency towards building and manufacturing smaller-scale products due to the desire for size efficiency. Most recently, scientists have learned that not only electronic devices, but also mechanical devices, may be miniaturized and batch-fabricated, promising the same benefits to the mechanical world as integrated circuit technology has given to the electronic world.
Acid-catalysed polymerisation of saccharides is a well-known phenomenon which is described in numerous general articles, books and patents.
Polydextrose is commercially available and all of these polydextrose products include a variety of residual compounds such as glucose, sorbitol, citric acid and other compounds which contribute to the taste, colour, and caloric value. Low molecular weight compounds such as 1,6-anhydroglucose and 5-hydroxymethylfurfural contribute a bitter taste and off-flavour.
U.S. Pat. No. 3,766,165 discloses that polymers useful as low-calorie food ingredients can be prepared by heating dextrose or maltose, optionally with a minor amount of a polyol, in the presence of edible polycarboxylic acid catalysts under reduced pressure. U.S. Pat. No. 3,876,794 discloses various kinds of foods containing same.
In the wake of this important disclosure, further development and research is concentrated on overcoming the sour and/or bitter taste observed in the products according to U.S. Pat. No. 3,766,165 and U.S. Pat. No. 3,876,794.
E.g., WO 98/41545 discloses methods for preparing polysaccharides by reacting glucose or glucose containing materials with a polyol in the presence of mineral acids such as phosphoric, hydrochloric and/or sulphuric acid. According to this disclosure, the low levels of catalyst as suggested therein lead to minimal or no off-flavors and little color formed during the course of the reaction. The methods disclosed in this document may comprise further purification methods.
U.S. Pat. No. 5,831,082 describes a process for obtaining highly pure water-soluble polydextrose by separation. The water-soluble polydextrose contains considerable amounts of di-, tri- and tetrasaccharides. The products according to this disclosure are reported to not have a bitter aftertaste.
U.S. Pat. No. 5,051,500 describes a continuous method for preparing a randomly-bonded polysaccharide.
In general, the benefits of miniaturized systems have been recognized but there is still a need for further developing the use of these systems in reactions for preparing polycondensates, such as polydextrose.

Microprocessing for preparing a polycondensate


A stand for a revolving card index is formed from parts which are fitted together to enable the economic manufacture of the stand.

The invention relates to a stand for a revolving card index having a roller-like holder for sheet-like information carriers which has two encircling T-shaped profile ridges serving for receiving the information carriers, in which rotational movements can be initiated by hand wheels, and which can be fixed in different angle positions by latching elements.
A stand of the abovementioned type which forms a constituent part of a revolving card index which is sold throughout the world under the "ROLODEX" trademark is known. The known stand comprises a tube which has been bent a number of times, a shaft which is flattened on one side being mounted in a rotatable manner in the mutually parallel ends of said tube. The shaft bears two plastic bodies which are guided thereon such that they can be displaced in the direction of its longitudinal axis, which form the roller-like holder and which are secured against axial movements relative to one another by the information carriers. Arranged at the flattened tube ends, moreover, are cup-like abutments which have end surfaces directed toward the hand wheels fastened at the ends of the shaft. Located between one of these end surfaces and one of the band wheels is a latching mechanism which has steel balls subjected to the action of a spring force, and which is intended for fixing the holder in different positions.
On account of the large number of parts and the design thereof, the construction of the known stand is comparatively complex and thus costly. In addition, the axial displaceability of the holder on the steel shaft which bears it is not fully satisfactory. This is because, if the known revolving card index is used over a relatively long period of time, on account of friction between the borders of the cup-like abutments and the lateral edges of the information carriers, this displaceability may result in undesired wear marks on the information carriers.


A ghost cancelling apparatus and method for quickly and sufficiently cancelling a ghost in a video signal, particularly a spread ghost, include performing a cross-correlation operation between the output video signal and a ghost cancelling reference signal, and correcting a filter coefficient based on the cross-correlation operation result when a remaining ghost is not less than a predetermined value, while when the remaining ghost is less than a certain value, the filter coefficient is corrected according to a least mean square method.

The present invention relates to a ghost cancelling apparatus and method for a television video signal, and more particularly, to an apparatus and method for automatically canceling a ghost within an input video signal using a transversal filter.
When a television signal is transmitted via a channel, the television signal includes a ghost signal as a result of multi-paths which are formed when the television video signal is reflected by a large object such as a building, etc. Such a ghost signal is received after being delayed in time in comparison with the original signal due to the difference in lengths of the signal paths. When the television signal is reproduced in a receiver, the ghost signal, having a smaller amplitude than that of the original signal, is displayed on a screen as a dark image which is offset from the image of the original signal.
To eradicate the unwanted ghost signal from the received signal, various ghost signal cancelling techniques have been proposed. However, such conventional ghost signal cancelling techniques utilize a common principle, in which the original signal is delayed so as to match the ghost signal in time, and the amplitude of the original signal is attenuated so to match that of the ghost signal. The attenuated and delayed original signal, that is, a ghost correction signal, is then provided to cancel the ghost signal.
A basic step of effectively cancelling a ghost signal within an input video signal, is a step of correctly extracting the existence of the ghost component in the input signal, that is, relative to its magnitude and location. In order to provide this correction step, the television signal transmission station transmits a ghost cancelling reference signal (GCR) a predetermined time before transmitting the video signal, and the receiver compares the received signal distorted during transmission with a signal corresponding to the reference signal in order to detect the location and magnitude of the ghost.
Conventionally, the cross-correlation is performed between the initially received video signal and a reference signal GCR. Using the result of the cross-correlation, the location and magnitude of the ghost are extracted and the filter coefficient is initialized. Thereafter, the filter coefficient is corrected according to the conventional least mean square (LMS) algorithm which is based on the difference between the output y(n) and the reference signal r(n), that is, error signal e(n), thereby obtaining an optimal filter coefficient to cancel the ghost. A system for performing this conventional method is shown in FIG. 1 and includes an error signal detector 3 for providing the error signal e(n), a LMS filter coefficient corrector 4 for receiving the error signal e(n), a transversal filter 2 which receives the output of the corrector 4 and a subtractor 1 for receiving input signal x(n) and the output of filter 2.
However, in the conventional ghost cancelling method, when the input signal includes a spread ghost due to multiple ghosts each having nearly the same delay time as shown in FIG. 2A, the spread ghost is recognized as a single ghost to be processed. Accordingly, it takes a long time to remove the ghost, and further, it is difficult to sufficiently remove the ghost. That is, when the spread ghost exists as shown in FIG. 2A, only that ghost having the maximum peak value is recognized, and therefore the spread ghost is detected as a single ghost as shown in FIG. 2B. As a result, the remainder of the ghost above the threshold value as shown in FIG. 2C, still exists in the output even after the ghost has been removed from the input signal as described above. When such a remaining ghost above the threshold value is supposed to be removed by repeatedly correcting the filter coefficient using an LMS algorithm based on an error signal between the output signal and a reference signal according to the conventional ghost cancelling method, it takes too much time and results in insufficient removal of the ghost.

Ghost cancelling apparatus having transversal filter for generating ghost cancelling signal and method thereof


A field emitter device formed by a veil process wherein a protective layer comprising a release layer is deposited on the gate electrode layer for the device, with the protective layer overlying the circumscribing peripheral edge of the opening of the gate electrode layer, to protect the edge of the gate electrode layer during etching of the field emitter cavity in the dielectric material layer on a substrate, and during the formation of a field emitter element in the cavity by depositing a field emitter material through the opening. The protective layer is readily removed subsequent to completion of the cavity etching and emitter formation steps, to yield the field emitter device. Also disclosed are various planarizing structures and methods, and current limiter compositions permitting high efficiency emission of electrons from the field emitter elements at low turn-on voltages.

In the technology of field emission structures and devices, a microelectronic emission element, or a plurality (array) of such elements, is employed to emit a flux of electrons from one or more field emitters. The field emitter, which often is referred to as a "tip", is specifically shaped to facilitate effective emission of electrons, and may for example be conical-, pyramidal-, or ridge-shaped in surface profile.
Field emitter structures have wide potential and actual utility in microelectronics applications, including electron guns, display devices comprising the field emitter structure in combination with photoluminescent material on which the emitted electrons are selectively impinged, and vacuum integrated circuits comprising assemblies of emitter tips coupled with associated control electrodes.
In typical prior art devices, a field emission tip is characteristically arranged in electrical contact with an emitter conductor and in spaced relationship to an extraction electrode, thereby forming an electron emission gap. With a voltage imposed between the emitter tip and extraction electrode, the field emitter tip discharges a flux of electrons. The tip or tip array may be formed on a suitable substrate such as silicon or other semiconductor material, and associated electrodes may be formed on and/or in the substrate by well-known planar techniques to yield practical microelectronic devices.
Two general field emitter types are known in the art, horizontal and vertical, the direction of electron beam emission relative to the substrate determining the orientational type. Horizontal field emitters utilize horizontally arranged emitters and electrodes to generate electron beam emission parallel to the (horizontally aligned) substrate. Correspondingly, vertical field emitters employ vertically arranged emitters and electrodes to generate electron beam emission perpendicular to the substrate.
Examples of horizontal field emitters are disclosed in Lambe U.S. Pat. No. 4,728,851 and Lee et al U.S. Pat. No. 4,827,177. The Lambe and Lee et al structures are formed as a single horizontal layer on a substrate. An improved horizontal field emitter is disclosed in Jones et al U.S. Pat. No. 5,144,191.
Examples of vertical field emitters are disclosed in Levine U.S. Pat. No. 3,921,022; Smith et al U.S. Pat. No. 3,970,887; Fukase et al. U.S. Pat. No. 3,998,678; Yuito et al U.S. Pat. No. 4,008,412; Hoeberechts U.S. Pat. No. 4,095,133; Shelton U.S. Pat. No. 4,163,949; Gray et al. U.S. Pat. No. 4,307,507; Greene et al U.S. Pat. No. 4,513,308; Gray et al U.S. Pat. No. 4,578,614; Christensen U.S. Pat. No. 4,663,559; Brodie U.S. Pat. No. 4,721,885; Baptist et al U.S. Pat. No. 4,835,438; Borel et al U.S. Pat. No. 4,940,916; Gray et al. U.S. Pat. 4,964,946; Simms et al. U.S. Pat. 4,990,766; and Gray U.S. Pat. No. 5,030,895.
As further examples, Tomii et al U.S. Pat. No. 5,053,673 discloses the fabrication of vertical field emission structures by forming elongate parallel layers of cathode material on a substrate, followed by attachment of a second substrate so that the cathode material layers are sandwiched therebetween in a block matrix. Alternatively, the cathode material layer can be encased in a layer of electrically insulative material sandwiched in such type of block matrix. The block then is sectioned to form elements having exposed cathode material on at least one face thereof. In the embodiment wherein the cathode material is encased in an insulative material, the sliced members may be processed so that the cathode material protrudes above the insulator casing. The exposed cathode material in either embodiment then is shaped into emitter tips (microtip cathodes).
Spindt et al U.S. Pat. No. 3,665,241 discloses vertical field emission cathode/field ionizer structures in which "needle-like" elements such as conical or pyramidal tips are formed on a (typically conductive or semiconductive) substrate. Above this tip array, a foraminous electrode member, such as a screen or mesh, is arranged with its openings vertically aligned with associated tip elements. In one embodiment disclosed in the patent, the needle-like elements comprise a cylindrical lower pedestal section and an upper conical extremity, wherein the pedestal section has a higher resistivity than either the foraminous electrode or the upper conical extremity, and an insulator may be arranged between the conical tip electrodes and the foraminous electrode member. The structures of this patent may be formed by metal deposition through a foraminous member (which may be left in place as a counter-electrode, or replaced with another foraminous member) to yield a regular array of metal points.
A metal microtip process conventionally employed in the art to fabricate structures of the type disclosed in the Spindt et al. patent involves the initial fabrication of a basic structure on a substrate of a material such as glass, on which are successively deposited cathode, insulator and gate material layers. The uppermost gate material layer is photomasked, and RIE processed to form an opening in the gate material layer, exposing the underlying insulator layer. The underlying layer of insulator material, e.g., SiO2, is then etched by chemical etch or RIE technique, to yield a cavity below the gate layer opening and extending down to the cathode material layer. This cavity extends radially outwardly under the overlying gate layer, so that the latter forms an overhang over the cavity about its periphery.
Subsequently in this microtip emitter structure formation process, a parting layer is vacuum deposited on the gate layer by evaporation technique, at a shallow angle (e.g., along a direction which is 75 degrees from the central axis of the cavity). The microtip element then is formed in the cavity on the cathode layer with contemporaneous formation of a closure layer overlying the parting layer on the gate structure. Finally, the parting layer is electrochemically etched to remove the closure layer, and yield the final structure in which the gate layer forms a gate electrode structure overlyingly surrounding the conical emitter tip in the cavity.
Jones et al U.S. Pat. No. 5,371,431 discloses a vertical column emitter structure in which the columns include a conductive top portion and a resistive bottom portion, and upwardly vertically extend from a horizontal substrate. By this arrangement, an emitter tip surface is provided at the upper extremity of the column and the tip is separated from the substrate by the elongate column. An insulating layer is formed on the substrate between the columns. An emitter electrode may be formed at the base of the column and an extraction electrode may be formed adjacent the top of the column.
As described in Jones et al U.S. Pat. No. 5,371,431, the vertical column emitter structure may be fabricated by forming the tips on the face of the substrate, followed by forming trenches in the substrate around the tips to form columns having the tips at their uppermost extremities. Alternatively, the vertical column emitter structure of U.S. Pat. No. 5,371,431 is described as being fabricatable by forming trenches in the substrate to define columns, followed by forming tips on top of the columns. In either method, the trenches may be filled with a dielectric and a conductor layer may be formed on the dielectric to provide extraction electrodes.
Further improvements in vertical field emitter structures and fabrication methods are disclosed in Jones U.S. patent application Ser. No. 029,880, filed Mar. 11, 1993, entitled "Emitter Tip Structure and Field Emission Device Comprising Same, and Method of Making Same," and in corresponding International Application Number PCT/US94/02669, published on 15 Sep. 1994 as International Publication WO 94/20975.
By the present invention, a number of structures are provided which enhance the performance and reliability of field emitter devices, particularly field emitter displays. The invention additionally provides methods for fabricating the structures.
More particularly, the invention provides various improved structures and methods for readily fabricating arrays of field emitter elements in a base structure, in which the field emitter elements have superior uniformity of shape and dimensional character, and resulting enhanced utility for field emitter displays, as compared to field emitter elements formed by prior art fabrication techniques.
FIGS. 1-3 depict a process for forming a base structure for subsequent fabrication of emitter tip elements thereon.
FIGS. 4-6 depict an alternative process to that shown in FIGS. 1-3 for forming a base structure for subsequent fabrication of emitter tip elements thereon.
FIGS. 7-9 depict the etch formation of emitter tip elements on a base structure of the type formed via the processes of FIGS. 1-3 or FIGS. 4-6.
FIGS. 10-16 depict the evaporation formation of emitter tip elements on a base structure of the type formed via the processes of FIGS. 1-3 or FIGS. 4-6, with FIGS. 10-12 and 15-16 showing schematically the structures in the processs flow and with FIGS. 13 and 14 showing photomicrographs of the "veiled" precursor structure of the field emission array and of the final field emission array structure.

Field emitter device, and veil process for the fabrication thereof


Many times, users play games to certain places in the game and decide to save the game and resume it later. When users resume the game, they have to wait for it to load, wade through menus to select the saved game, and wait again for the game to resume. The introduced technique directly suspends and resume games that are rendered on a cloud server based on user initiated suspend and resume control commands. As the games are directly suspended and resumed, the users can skip past menu and screen loading. The introduced technique can track game information of multiples users in cloud tokens, and can move these cloud tokens from one memory location to another based on the user initiated suspend and resume control commands.

Video gaming, played on a local gaming device (such as a personal computer), is a rapidly growing commercial field that is receiving a great deal of attention due to its universal interest and appeal. Many times, users play these games to certain places in the game and decide that they have reached a point where they want to quit playing the game and resume it later. Some games do have a "saved games" feature, which allows a player to resume playing the game from different locations inside the game. However, users have to start the game, wait for it to load, wait through menus, then select the saved game to restore, and wait for the game to finally load.

Quickly suspending and resuming applications running on a cloud server


Device and method for drilling into geological formations. The device comprises:                a rotatable body;        drilling cutters arranged on an axial end surface of the rotatable body;        a percussion part, which is parallel to the rotating axis reciprocatable arranged on said body; and        percussion cutters arranged on an axial end surface of the percussion part.

Such devices are generally known. The drilling cutters form a rotating movement with which they scrape parts of the bottom of the hole to be formed. These cuttings are then removed by for example the drilling fluid.
When however a hole has to be drilled into a geological formation of a relatively hard material, this scraping action is very slow and has a low yield.
To alleviate this disadvantage drilling devices are known which use the same principle as a hammer drill. In such a device a bit part is rotated and a hammer part is hammered against this bit part. The vibrations caused by the hammering of the hammer part cause cracks into the material in which the hole is drilled. The rotating bit then scrapes off the cracked parts of the material. A disadvantage of such a device is that the cutters have to endure high forces because of the hammering resulting in an excessive wear of the drill cutters. Another disadvantage is that part of the hammering energy is absorbed in the contact surface between drill bit and hammer part.
Yet another disadvantage is that the cuttings are not adequately removed as no scraping action is performed during lift-off of the bit part.
A further disadvantage is that when sharp cutters are used, which will penetrate the formation, the cutters will hinder rotation of the drilling device.

Abstract: The method comprises the steps of:                bringing a percussion part with a percussive movement in contact with the formation in order to crack at least a part of the formation, and        scraping the cracked parts of the formation with a drilling part.


Disclosed are various embodiments for shopping using a messaging system. A message from a user includes a plurality of line items. At least one item may be identified corresponding to at least one of the plurality of line items. The at least one item may be included in a list associated with a user account.

An electronic marketplace allows a multitude of merchants to sell items through a common network site. Customers access the electronic marketplace by browsing through webpages powered by an electronic commerce system. Customers who wish to purchase many products will often spend more time browsing websites as the number of products they wish to purchase increases.

Message shopping over an electronic marketplace