An information recording device includes a control unit and a memory interface unit. An ICV for each sector data of data to be stored in units of sectors is stored in the redundant part of each sector. An ECC and an ICV are stored in the redundant part of each sector, so that sector-unit ICV storage can be performed without reducing the storage capacity of the data part of the sector. processing that combines data parts by using the file system of a device can be performed similarly to conventional data combination processing that only combines data parts in which ones purely used as data are stored. The control unit does not have any load because only each sector which is regarded as valid (no interpolation) as a result of ICV checking is transmitted to the control unit, and the ICV checking is performed by the memory interface unit.

1. Field of the Invention
The present invention relates to information recording devices, information playback devices, information recording methods, information playback methods, information recording media, and program providing media. In particular, the present invention relates to an information recording device, an information playback device, an information recording method, and an information playback method in which content stored in a storage device is protected under high security management so that the content can be effectively checked for interpolation, and to an information recording medium and a program providing medium which are used therewith.
2. Description of the Related Art
With the rapid spread of the Internet in recent years and the spread of compact mobile players and portable game machines, the distribution of various types of software data (hereinafter referred to as "content"), such as music data, game programs, and image data, via a network such as the Internet or by storage media, such as digital versatile disks (DVDs), compact disks (CDs), and memory cards, is rapidly increasing. The distributed content is received via the network and is stored in a play-only device or a storage medium of a game machine which belongs to a user, or a memory card containing the content is loaded into the game machine, whereby content-playback processing or the execution of a program can be performed.
Content storage devices include a flash memory, which is commonly used. The flash memory is a form of electrically rewritable, non-volatile memory called an "electrically erasable, programmable read-only memory (EEPROM)". The degree of integration of conventional EEPROMs is limited because the use of two transistors for one bit results in a large occupied area per bit. Conversely, in the flash memory, by using an all-bit batch erasure, one bit is implemented by one transistor. It is expected that flash memories will replace recording media such as magnetic disks and optical disks.
A type of memory card is also known in which the flash memory can be loaded/unloaded into/from a data recording/playback device. By using this memory card, a digital audio recorder/player in which a memory card is used instead of a conventional disk medium such as CD or MiniDisk (registered trademark) (MD) can be provided.
When such a content storage device using the flash memory is used in a personal computer, a playback unit, or the like, a file management system called a "file allocation table (FAT)" is generally used as an access information table. In the FAT system, after defining necessary files, the parameters required for the files are sequentially set from the first file. As a result, the file size can be set to be variable, and one or more management units (e.g., sectors or clusters) can constitute one file. Details related matters to the management units are written in the FAT. In the FAT system, the file structure can be easily formed regardless of the physical properties of the recording medium. Accordingly, the FAT system can be employed not only in floppy disks and hard disks but also in magneto-optical disks. The FAT system is employed in the above memory card.
Various content, such as music data, image data, or programs, are accessed based on the FAT from, for example, the above flash memory in response to a user's instruction from an information device which is used as a playback unit, a game machine, or a personal computer, or to a user's instruction via an input device connected to the information device. The content is played back by the information device or on a display and a speaker which are connected thereto.
In general, the distribution rights, etc., of much software content, such as game programs, music data, and image data, are possessed by the creators and sellers of the content. Accordingly, in the distribution of the contents, security limitation of usage is commonly employed in which unauthorized duplication, etc., is prevented by permitting only a registered user to use the content.
One technique enabling limitation of use by the user is encryption processing on the content to be distributed. Specifically, various encrypted contents, such as encrypted audio data, image data, and game programs, are distributed via, for example the Internet, and only a person who is identified as a registered user is supplied with a means for decrypting the distributed content, that is, a decryption key.
The encrypted data can be processed to form usable decrypted data (plaintext) by performing decryption processing based on predetermined processes. This method of data encryption and decryption which uses an encryption key for information encryption processing and a decryption key for decryption processing has been conventionally known.
When adding integrity check values (ICVs) to data which is stored in plurality of sectors of a memory (e.g., a flash memory) which stores data in units of sectors, and when adding an ICV for each sector, the storage of an ICV in the data part of each sector reduces a data area, and when a device performs data playback, processing that separates ICV data and actual data must be executed.
In this construction in which data is stored in units of sectors, the setting of ICVs in units of sectors causes problems in that a reduction in the capacity of the data storage area of the memory, an increase in the load on the device, etc. Accordingly, an effective construction is not implemented.

Information recording and playback system having a memory interface and method therefore


Techniques for prioritizing non-scheduled data are described. Non-scheduled data to be transmitted on a non-scheduled MAC-d flow having a non-scheduled priority and scheduled data to be transmitted on a scheduled MAC-d flow having a scheduled priority may be identified by a user equipment (UE). The UE may transmit the non-scheduled MAC-d flow and the scheduled MAC-d flow according to a priority condition. In one aspect, the UE may receive a pre-allocation of power associated with a non-empty non-scheduled MAC-d flow. Based on a priority condition that the non-scheduled priority is a highest priority, the UE may apply all of the pre-allocation of power when transmitting the non-scheduled MAC-d flow. In one aspect, based on a priority condition that the non-scheduled priority is a lower priority, the UE may adjust the non-scheduled priority and/or the scheduled priority so that the non-scheduled priority is a higher priority.

1. Field
Aspects of the present disclosure relate generally to wireless communication systems, and more particularly, to prioritizing non-scheduled data in a wireless communications network.
2. Background
Wireless communication networks are widely deployed to provide various communication services such as telephony, video, data, messaging, broadcasts, and so on. Such networks, which are usually multiple access networks, support communications for multiple users by sharing the available network resources. One example of such a network is the UMTS Terrestrial Radio Access Network (UTRAN). The UTRAN is the radio access network (RAN) defined as a part of the Universal Mobile Telecommunications System (UMTS), a third generation (3G) mobile phone technology supported by the 3rd Generation Partnership Project (3GPP). UMTS, which is the successor to Global System for Mobile Communications (GSM) technologies, currently supports various air interface standards, such as Wideband-Code Division Multiple Access (W-CDMA), Time Division-Code Division Multiple Access (TD-CDMA), and Time Division-Synchronous Code Division Multiple Access (TD-SCDMA). UMTS also supports enhanced 3G data communications protocols, such as High Speed Packet Access (HSPA), which provides higher data transfer speeds and capacity to associated UMTS networks.
As the demand for mobile broadband access continues to increase, research and development continue to advance the UMTS technologies not only to meet the growing demand for mobile broadband access, but to advance and enhance the user experience with mobile communications.
As an example, in Release 9 of the 3rd Generation Partnership Project (3GPP) family of specifications (or standards), "pre-allocation" of power to non-scheduled (NS) data on a primary cell (or carrier or frequency) was introduced for Dual Cell-High Speed Uplink Packet Access (DC-HSUPA). More particularly, according to the 3GPP Medium Access Control (MAC) technical specification (TS) 25.321, entitled "Universal Mobile Telecommunications System (UMTS); Medium Access Control (MAC) protocol specification", which is publicly available, for DC-HSUPA when there is more than one Activated Uplink Frequency available, a certain amount of power is pre-allocated for non-empty non-scheduled MAC-d flows. However, the description of the pre-allocation scheme is ambiguous and different interpretations result in different behavior at a user equipment (UE). Because of this ambiguity, it is possible that non-scheduled, but high priority data, such as, for example, signaling radio bearer (SRB) data, may not be transmitted by a UE in a timely fashion resulting in undesirable call drops.
As such, improvements in prioritizing non-scheduled data in a wireless communications network are desired.

Apparatus and method for prioritizing non-scheduled data in a wireless communications network


A semiconductor memory device according to an embodiment includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a plurality of first electrodes provided on the first insulating film, a second insulating film provided on a side surface of the first electrodes and on an upper surface of the first electrodes, and a second electrode insulated from the first electrodes by the second insulating film. The second electrode includes an interconnect portion provided on the second insulating film, and a downward-extending portion extending into a space between the first electrodes from the interconnect portion. A lower end portion of the downward-extending portion is not covered with the second insulating film.

NAND flash memory has been developed as a large-capacity nonvolatile memory device. In NAND flash memory, data is stored by storing charge in floating gate electrodes. However, interference between the floating gate electrodes becomes problematic when the cell structure of NAND flash memory is shrunk to increase the bit density. Although a method has been proposed in which a portion of the control gate electrode is extended into the space between the floating gate electrodes to suppress the interference between the floating gate electrodes, in such a case, the distance between the silicon substrate and the control gate electrode becomes short; and the breakdown voltage between the silicon substrate and the control gate electrode undesirably decreases.

Semiconductor memory device and method for manufacturing the same


The invention provides an improved method of exploring paths having multiple layers. Such paths may be through any of a number of types of networks, such as transportation networks, distribution networks, business structure networks, or telecommunication networks. The method initially displays in a path explorer view, the nodes and links of a first layer of the path in a linear configuration. Upon selection/deselection of a layer expander icon located near the first layer node at which the path traverses to the second layer, the method expands/collapses the second layer of nodes and links in a linear configuration which is parallel to, but offset from the first layer. The method further contemplates the display of a topology view which, in conjunction with the path explorer view, graphically displays a structure of a selected layer of the path, with the path visually distinguished therein.

In many industries, it is desirable to view a path taken by a particular object, idea or signal, as it travels through for example, transportation, distribution, business or communication networks. Common examples include tracking of a courier package from an originating point to its destination, examining the travel of individuals through a transportation network, viewing a path a proposal may take within a business from conception through to final approval, or examining an assigned path of data traffic through a telecommunication network.
Such paths typically consist of nodes and links, with nodes representing hubs, intersections, action points, sources, destinations, etc., and links representing the logical or actual transportation or communication links between the nodes. For example, in a communication network, the nodes may be communication devices such as routers or antenna base stations, while the links may be any means of communication between two nodes such as through copper wire, optical cable, or microwaves. In a transportation network, nodes may be airports, train stations, or shipping ports, while the links may be air routes, train routes or shipping routes.
Many methods have been developed to view paths. One example is a geographic topology which displays nodes according to their geographic locations, as well as the links which connect the nodes. In one version, all nodes and all links are displayed, with the specific nodes and links comprising the path of interest highlighted in the geographic topology. In another version, only those nodes and links which make up the path of interest is displayed. Another example of a method of viewing paths is a logical topology, which is similar to the geographic topology except that the nodes are spatially arranged not according to their geographic locations, but in accordance with some other logical organization. A third example is a line view, wherein a path is represented by a simple linear representation of all of the nodes which comprise the path, with link representations therebetween.
Each of the above methods are useful for viewing simple paths. However, where paths become complex, these methods may fail. One source of complexity is the sheer number of nodes and links which may comprise a path. Another source of complexity is the amount of information which must be displayed in respect of each of the nodes and links to be viewed.
A third source of complexity is where the nodes are grouped into layers, wherein it may be desirable to know which nodes fall within which layer, and further, information respecting each layer may need to be viewed. One example of a network in which the nodes are grouped into layers is a distribution network, wherein the nodes may consist of source/destinations, storage facilities, trucking depots, and airports. In such a case, the nodes may be grouped into four distinct node layers, the first being a pick-up/delivery layer, the second being a storage layer, the third being a trucking layer, and the fourth being an air transportation layer. Thus a path from pick-up to delivery may progress from nodes in the pick-up/delivery layer, to the trucking layer, to the air transportation layer, to the storage layer, to the trucking layer, and back to the pick-up/delivery layer. Similarly, in a telecommunication network, node layers may include an IP (Internet Protocol) layer, a SONET (Synchronous Optical Network) layer, an SDH (Synchronous Digital Hierarchy) layer, an ATM (Asynchronous Transfer Mode) layer, and an optical layer. In a business plan network, node layers may include a planning committee layer, a finance layer, an engineering layer, and a marketing layer. Of course, there may exist sub-layers within each layer. For example, in the telecommunication context, there may be multiple SONET layers, grouped by geographic location, for example.
Where nodes are grouped into layers, it may at times be desirable to view all nodes in the path, grouped according to the layer in which a particular node may belong. Other times, it may be desirable to omit nodes of a certain layer, allowing an individual to view only those layers of interest. Current solutions include identifying in a geographic or logical topology, or in a linear representation, nodes which belong in a particular layer using a distinctive colour, special icons, text, or by drawing a box around nodes comprising a node layer. However, such identifiers tend to clutter the path representation, and make it difficult to discern the node layers. Further, such solutions fail when a large number of nodes need to be viewed.


To deposit silicon onto a substrate, there is introduced into a reaction zone a gas including source gases of silicon, carbon, nitrogen and an inert gas. An electric field is generated using low and high frequency RF power to produce a plasma discharge in the reaction zone to cause the deposition. The average power on the substrate is substantially constant. A ratio of low frequency RF power to total RF power is less than about 0.5.

Integrated circuits have evolved into complex devices that include multiple levels of metal layers to electrically interconnect discrete layers of semiconductor devices on a single semiconductor chip. Recently, with the evolution of higher integration and higher density of integrated circuit components, the demand for greater speed of the data transfer rate is required. For this reason, an insulating film having high compressive stress, low leakage current, low dielectric constant to give the small RC delay is employed.
As the device dimensions continuously shrink, the RC time delay of the interconnect system becomes one of the most important limitation factors to the integrated circuits performance. The RC delay is directly proportional to the resistivity of the metal and the dielectric constant of the dielectric. In order to minimize the signal propagation delay, it is inevitable to use low dielectric constant materials as the inter-layer and intra-layer dielectrics (ILD). While many low-k (k<3.0) materials have been used as ILDs, silicon nitride with a high dielectric constant (k>7.0) is still the primary candidate for the Etch Stop Layer (ESL) required in copper damascene structures. Thus, it is desirable to replace silicon nitride by new materials with lower dielectric constants to further reduce the effective dielectric constant of the Cu interconnect system. In recent years, increasing interest has been focused on the study of high stress and thermally stable low-k silicon carbide based films deposited by PECVD using organosilicon gases.
Furthermore, to reduce the size of interconnection lines and vias is to change the wiring materials from the conventional aluminum (Al) to copper (Cu) wiring having low electric resistance.
However, to produce a semiconductor device having multi-layered copper wiring, a low dielectric constant insulating layer is formed as the interlayer insulating film on the copper wiring.
The use of copper as the interconnect material has various problems. For example, copper is easily diffused into the low dielectric constant insulating film from the copper wiring, thus increasing the leakage current between the upper and lower wiring.
The use of silicon carbide films as copper diffusion barrier layers has been published in U.S. Pat. No. 5,800,878. The dielectric constant of this film is about 5, and in addition it is used as copper diffusion barrier layers for 130 nm-nodes Large Scale Integration (LSI) technologies where the dielectric constant of the interlayer dielectric film is 3.
For next generation, 100 nm/65 nm-nodes Ultra Large Scale Integration (ULSI) technologies, the reduction of interconnect capacitance is important for suppressing the signal delay as well as the power consumption. Interlayer dielectric films with dielectric constant less than 2.5 are used with copper damascene structures. To decrease the effective dielectric of fine pitched lines, further reduction in the dielectric constant is necessary not only for the inter layer dielectric film itself but also the supporting dielectric films such as hard mask, etch stop layers and copper diffusion barrier layers.
The interface between copper and copper diffusion barrier layer is known to be the key point for the electro-migration reliability of copper interconnects. The interface between copper and the copper diffusion barrier layer is the dominant diffusion path. However, there is no report on the identification of the dominant path for copper interconnects. On the other hand, the interface can be not only the dominant path but also the electro-migration induced void nucleation site.
The strength of adhesion between copper and diffusion layer would affect the electro-migration induced void nucleation because electro-migration induced void nucleates when copper atom at the interface is stripped away from the diffusion layer. Films with high compressive stress provide better adhesion with copper. It is also suggested that in order to prevent the migration of metal atoms, the film has to have high compressive stress such as above 200 MPa where the stress is stable even after being directly exposed to air at room temperature of about 20 to 30° C. Furthermore, the leakage current and dielectric constant of such film at 1 MV/cm has to be less than that of 1×10−8 A/cm2 and less than 5.0 respectively. SiCN films with dielectric constant less than 5 such that the leakage current at 1 MV/cm is less than 1×10−8 A/cm2 are suggested to be suitable to substitute for such films.
Using the silicon carbide film as an etch stop film was developed and presented in U.S. Pat. No. 5,800,878. A dielectric constant of the silicon carbide film is approximately 5. Silicon carbide films are applied to LSI devices using copper wiring in combination with carbon-containing silicon oxide films, whose dielectric constant is approximately 3. There are several different types of compositions for what is generally called silicon carbide films. One type is a silicon carbide film comprising Si, C and H. This film's stress and dielectric constant change if it is left in the atmosphere. This is due to the oxidation of the top surface of the silicon carbide film. The method to minimize the oxidation of carbon containing materials, such as silicon carbide, with an inert gas plasma such as helium (He), Argon (Ar) is published in JP laid-open patent 2001/0060584. This inert gas plasma treatment only minimizes the top surface of the silicon carbide film from getting oxidized, however, no changes/improvements to the film properties are observed.
The method of forming nitrogen doped silicon carbide (SiCN), oxygen doped silicon carbides (SiCO) has been published in U.S. Patent Application Publication 2001/0030369, U.S. Patent Application Publication 2002/0027286, U.S. Patent Application Publication 2001/0051445, and U.S. Patent Application Publication 2001/0031563. Furthermore; these films have been proposed as copper diffusion barrier layers. Though a silicon carbonitride layer has been proposed as a copper diffusion barrier layer with low leakage current, its dielectric constant is high and film stress is less compressive such as 5.5 and 100 MPa respectively.
In case of oxygen doped silicon carbide, although its dielectric constant is relatively low, such as less than 5, it cannot sufficiently refrain from increasing the leakage current. To decrease the leakage current to a sufficient level, the oxygen must be introduced much more into the silicon carbide film.
However, to do so, the leakage current can be reduced up to a satisfactory level, nevertheless a new problem is caused such that the surface of the copper wiring is oxidized and thus the barrier insulating film and the inter dielectric layer is ready to peel.


In order to mount a semiconductor element of a small electrode pitch, an inner lead portion of a lead frame is made thin and narrow to reduce a pitch. Even a semiconductor element in which an electrode arrangement pitch is smaller than conventionally can be mounted by flip chip bonding, the number of components such as a wire is reduced, and a possibility of wire cutting or the like caused by vibration or the like during semiconductor device assembling is reduced. A fine inner lead formation scheduled area of a conductor plate is half-etched to make a plate thickness smaller than that in a peripheral area. Then, the fine inner lead formation scheduled area is patterned to form a fine inner lead portion 22. Especially, a width of a tip 22a of the fine inner lead portion 22 is set smaller than those of a middle inner lead portion 23 and an outer lead portion 25.

1. Field of the Invention
This invention relates to a lead frame, a manufacturing method of the lead frame, and a semiconductor device that is packaged by using the lead frame.
2. Description of the Related Art
The development of a technology of a semiconductor integrated circuit has heightened a request for high-density mounting especially by using multiple pins. In response to such a request, various packaging forms have been developed for semiconductor devices.
There is a resin sealed package of a lead frame type as one of the packaging forms of the semiconductor devices. The resin sealed package has been widely used because of an inexpensive material and a shape that is suited to mass production.
In the package of the lead frame type, a semiconductor element and an inner lead portion of the lead frame are generally connected to each other through a metal wire (e.g., see Patent Document 1 as identified below).
A constitutional example of a conventional semiconductor device sealed by a resin sealed package 142 of a lead frame type will now be described with reference to FIG. 11. Two semiconductor elements 143a and 143b are mounted in the resin sealed package 142. One semiconductor element 143a is stuck to an upper surface of a dye stage 144 by a semiconductor element adhesive 145. An upper surface of the semiconductor element 143a is a circuit formation surface, and one end of a metal wire 149 is attached to a bonding electrode 150 on the circuit formation surface. Further, the other end of the metal wire 149 is connected to an inner lead portion of a lead frame 148.
An upper surface of the other semiconductor element 143b is a circuit formation surface, and one end of a tab lead 146 is attached to a bump 152 on the circuit formation surface. Further, the other end of the tab lead 146 is connected to the inner lead portion of the lead frame 148. The semiconductor element 143b to which the tab lead 146 is attached is disposed below the dye stage 144 through an insulating material 147.
If a metal wire is used for a connection between a semiconductor element and an inner lead portion of a lead frame, there is a possibility that wire cutting or the like will occur due to vibration or the like during package manufacturing. However, if a semiconductor chip and the inner lead portion are connected by flip chip bonding, the metal wire and a tab lead are made unnecessary. Thus, a possibility of metal wire cutting or the like can be eliminated, and the number of components can be reduced.
Patent Document 1: Japanese Patent Application Laid-Open No. 7 (1995)-30051 (claim 1 and FIG. 1)

Lead frame, manufacturing method of the same, and semiconductor device using the same


A laptop computer and keyboard provides an improved assembly of a central processing unit (CPU) housing, keyboard and screen, utilizing a keyboard having a right and left hand pair of keyboard portions or halves joined together in a non-planar (V-shaped or open-book shaped) arrangement along a common edge or by a connecting member. Both sides of each keyboard half preferably contain at least one key or input control, such that the entire desired array of keys is disposed about the four surfaces (i.e., two front sides and two back sides) and/or edges.

1. Field of the Invention
This invention relates generally to computers and their peripherals, and more specifically to an improved portable computer and its associated ergonomic keyboard.
2. Description of the Prior Art
Computer keyboards are well known, and typically consist of a flat, generally rectangular rigid "slab" bearing one hundred or more keys, including standard letter keys (in a "QWERTY" or other arrangement), number keys, punctuation keys, function keys, and the like. However, long-term use of such flat keyboards can be awkward and uncomfortable to the user, and may even cause physical problems such as Carpal Tunnel Syndrome and related disorders.
Laptop computers typically consist of a CPU housing (usually including disk drives, batteries, ports, and other appropriate hardware), a keyboard, and a screen, which components are either integral or connected together in a folding arrangement. However, the necessarily small size of the keyboard portion in a laptop computer makes it particularly difficult for the user's hands to access the keys, and exacerbates the physical problems associated with any traditional keyboard.


An engine includes a variable valve timing device coupled to a camshaft, which operates within a cam chamber of the engine. The variable valve timing device includes a hydraulic pressure switchover valve having an elongated valve body. The switchover valve is disposed outside the cam chamber and is oriented such that a longitudinal axis of the elongated valve body lies generally parallel to a rotational axis of the camshaft. In this manner, the engine size can generally remain compact while still employing a variable valve timing device with a switchover valve.

1. Field of the Invention
The present invention relates to an engine comprising a variable valve timing device that varies phases of a camshaft to vary timing of opening and closing of an intake valve, an exhaust valve, or both.
2. Description of the Related Art
Some engines today include a variable valve timing device that varies the timing for opening and closing intake and exhaust valves in the engine according to the rotating speed of the engine and a load thereon. In most engines, the valves are driven off of the crankshaft in a timed relationship. A crank-side drive member is mounted on a crankshaft and a camshaft drive member is mounted on a camshaft. A timing chain or a timing belt connects these drive members together such that the camshaft(s) rotate together with the crankshaft. The variable valve timing device changes the phase of the camshaft drive member and the camshaft relative to the crank-side drive member using hydraulic pressure. Japanese Patent Publication No. JP-A-07-293210 discloses an example of a variably valve timing device that uses hydraulic pressure to change the phase of the camshaft and the camshaft drive member.
An engine provided with the hydraulic pressure-type variable valve timing device described above needs a hydraulic pressure switchover valve that switches hydraulic pressure to an advance-side or a lag-side of a hydraulic pressure chamber of the variable valve timing device. That is, the switchover valve is used to supply pressurized hydraulic fluid to either the advance-side or lag-side of the hydraulic pressure chamber of the variable valve timing device. Consequently, the variable valve timing device either advances or retards the position of the camshaft relative to the crank-side drive member. The switchover valve typically has an elongated body. In some prior applications, the size of the engine must be enlarged to accommodate the switchover valve within the cylinder head of the engine.

Engine with variable value timing device


In a semiconductor device including a lockstep function, conflicts of bus accesses by a plurality of processors are suppressed. The semiconductor device includes a first processor, a second processor for monitoring operation of the first processor in a first mode, first and second buses, first and second non-shared resources dedicated to either the first or second processor in a second mode, and a first selector for selecting a bus for transferring interface signals between the second processor and the selected bus. In a second mode in which the first and second processors execute different instructions, the first selector selects the second bus. In the second mode, the first non-shared resource is accessed by the first processor via the first bus and the second non-shared resource is accessed by the second processor via the second bus.

The present disclosure relates to a semiconductor device, for example, a semiconductor device including a plurality of processors and, as modes of operation, a lockstep mode in which a plurality of processors perform the same operation and a non-lockstep mode in which a plurality of processors perform different operations.
In recent years, there has been a semiconductor device that includes a built-in processor for executing programs, which realizes an improvement in reliability or an improvement in throughput by incorporating a plurality of processors. Such a semiconductor device may include a lockstep mode in which a plurality of processors are operated so as to obtain the same calculation result, and a non-lockstep mode in which a plurality of processors are operated differently.
There are disclosed techniques listed below.    (Patent Document 1) Japanese Unexamined Patent Application Publication No. 2010-198131
Patent Document 1 discloses an example of a semiconductor device capable of switching between a lockstep mode and a free step mode which is a non-lockstep mode. In the lockstep mode, the plurality of processors described in Patent Document 1 detect errors by causing the plurality of processors to execute the same processing and comparing the execution results of the processing. On the other hand, in the free step mode, a plurality of processors can execute different processing. Therefore, semiconductor device described in Patent Document 1 can improve the throughput of the entire semiconductor device in the free step mode.
On the other hand, in a semiconductor device including a plurality of processors, circuits for realizing various functions may be provided as resources in addition to the plurality of processors. Here, the resource is, for example, a memory, a timer, an I/O interface circuit, an analog-to-digital converter, or a peripheral circuit such as a digital-to-analog converter. If semiconductor device comprises such resources, the processor writes to or reads from the resources via the buses.

Semiconductor device and method of operating the same


In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

The present invention relates to a semiconductor device. More particularly, the present invention relates to a technology effectively applicable to a semiconductor device designed into a configuration of a multistage amplifier circuit.
A semiconductor device known as a high-frequency power amplifier (or a high-frequency power module) is incorporated in a portable communication apparatus such as a portable telephone or an car telephone of the PDC (Personal Digital Cellular) system or a portable telephone of the PHS (Personal Handyphone System). This high-frequency power amplifier is designed into a configuration of a multistage amplifier circuit in which a plurality of amplifying means are electrically connected to each other to form a multistage structure.
The high-frequency power amplifier is built by mounting a semiconductor chip on a main surface of a wiring substrate.
The semiconductor chip has an amplifying means formed on a main surface thereof. Electrodes formed on a main surface of the semiconductor chip are electrically connected to electrodes formed on a main surface of the wiring substrate by conductive wires. The amplifying means has a configuration in which typically a plurality of field-effect transistors are electrically connected to each other to form a parallel circuit. A gate terminal (serving as the input unit) of the amplifying means is electrically connected to a chip-side input electrode formed on the main surface of the semiconductor chip. On the other hand, a drain terminal (serving as the output unit) of the amplifying means is electrically connected to a chip-side output electrode formed on the main surface of the semiconductor chip. The chip-side input electrode is placed at a position on a particular side of the semiconductor chip whereas the chip-side output electrode is placed at a position on another side of the semiconductor chip facing the particular side. A source terminal of the amplifying means is electrically connected to a back-surface electrode formed on a back surface of another semiconductor chip facing the main surface. The back-surface electrode is fixed at a reference electric potential. The chip-side input electrode is electrically connected to a substrate-side input electrode formed on the main surface of the wiring substrate by an input wire. The substrate-side input electrode is placed at a position facing the particular side of the semiconductor chip cited above. The chip-side output electrode is electrically connected to a substrate-side output electrode formed on the main surface of the wiring substrate by an output wire. The substrate-side output electrode is placed at a position facing the other side of the semiconductor chip cited above.
By the way, in order to reduce the size and the cost of the high-frequency power amplifier, an attempt has been made to form a plurality of amplifying means on one semiconductor chip. In the case of two amplifying means formed on one semiconductor chip, for example, the amplifying means at the front stage is oriented in a direction opposite to a direction in which the amplifying means at the rear stage is oriented so that the input and the output of the amplifying means at the front stage are placed at locations in close proximity to respectively the output and the input of the amplifying means at the rear stage. As a result, the input and output wires at the front stage and the output and input wires at the rear stage are close to each other. As a result, there is raised a problem of a deteriorating high-frequency characteristic due to a mutual-induction effect between the input and output wires. In particular, the mutual-induction effect between the input wire of the front stage and the output wire of the rear stage is a serious problem since a difference between a power flowing through the input wire and a power flowing through the output wire is big.
A technology to prevent the high-frequency characteristic from deteriorating due to a mutual-induction effect between wires is disclosed for example in Japanese Patent Laid-open No. Hei 9-260412 (1997). According to this technology, a chip-side bonding electrode is formed between the chip-side input electrode and the chip-side output electrode whereas a substrate-side bonding electrode is formed between the substrate-side input electrode and the substrate-side output electrode. The chip-side bonding electrode is electrically connected to the substrate-side bonding electrode and, by fixing the chip-side bonding electrode and the substrate-side bonding electrode at a reference electric potential, the high-frequency characteristic can be prevented from deteriorating due to a mutual-induction effect between the input and output wires.
In addition, the high-frequency power amplifier module employing transistors is a key device of a portable telephone of mobile communication adopting systems such as the PDC (Personal Digital Cellular) system and the GSM (Global System for Mobile communication). The demand for such a portable telephone has been growing tremendously in recent years. Specifications of such a high-frequency power amplifier include a small size and a low cost in addition to good high-frequency characteristics for applications to mobile communication systems.
A technique to respond to such a demand is disclosed in Japanese Patent Laid-open No. 2755250. By placing 2 transistors, namely, a first-stage transistor 2000 and a second-stage transistor 3000, at locations close to each other on a semiconductor chip 1000 as shown in a top-view diagram of FIG. 21 and a squint-view diagram of FIG. 22, the size and the cost can be reduced. A bonding input electrode 2000b of the first-stage transistor 2000 is electrically connected to a bonding electrode 7000d of a wiring substrate 6000 by an input bonding wire 9000d. A bonding output electrode 3000c of the second-stage transistor 3000 is electrically connected to a bonding electrode 7000a of the wiring substrate 6000 by an output bonding wire 9000a. A bonding electrode 10000a on the semiconductor chip 1000 is electrically connected to a bonding electrode 12000a of the wiring substrate 6000 by a shield bonding wire 13000a. The shield bonding wire 13000a is provided between the input bonding wire 9000d and the output bonding wire 9000a. The bonding electrode 10000a and the bonding electrode 12000a at the ends of the shield bonding wire 13000a are connected to the ground at high frequencies by via holes bored through the semiconductor chip 1000 and the wiring substrate. It should be noted that the via holes themselves are not shown in the figure. By providing a shield bonding wire 13000a, the amount of coupling through a mutual inductance between the input bonding wire 9000d and the output bonding wire 9000a can be reduced, allowing the degree of deterioration of isolation between the high-frequency input and output terminals to be lowered. As a result, the high-frequency characteristic is improved.
The problem of coupling through a mutual inductance between the input bonding wire 9000d and the output bonding wire 9000a is raised by a location of the input of the first-stage transistor 2000 in close proximity to a location of the output of the second-stage transistor 3000 and a location of the output of the first-stage transistor 2000 in close proximity to the location of the input of the second-stage transistor 3000 which are caused by the fact that the first-stage transistor 2000 and the second-stage transistor 3000 are oriented in directions opposite to each other. In particular, the mutual-induction effect between the input bonding wire 9000d of the first-stage transistor 2000 and the output bonding wire 9000a of the second-stage transistor 3000 is a serious problem. This is because the high-frequency power output by the second-stage transistor 3000 is higher than the high-frequency power input to the first-stage transistor 2000 by 20 to 30 dB (or 100 to 1,000 times), giving rise to a positive feedback from the output to the input. Even though the output bonding wire 9000c of the first-stage transistor 2000 and the input bonding wire 9000b of the second-stage transistor 3000 are also close to each other, the problem of a deteriorating high -frequency characteristic caused by a mutual-induction effect does not arise due to the fact that a ratio of a high-frequency power flowing through the input bonding wire 9000b to a high-frequency power flowing through the output bonding wire 9000c is not greater than 0 dB (1 time).
In FIGS. 21 and 22, reference numerals 2000a and 3000a denote the main bodies of the first-stage transistor 2000 and the second-stage transistor 3000 respectively. Reference numerals 2000d and 3000d denote the source electrodes of the first-stage transistor 2000 and the second-stage transistor 3000 respectively. Reference numeral 2000c denotes the bonding output electrode of the first-stage transistor 2000 and reference numeral 3000b denotes the bonding input electrode of the second-stage transistor 3000. Reference numeral 4000 denotes a ground electrode whereas reference numerals 7000b and 7000c each denote a bonding electrode of the wiring substrate 6000. Reference numerals 8000a to 8000d each denote a lead electrode and reference numeral 104 denotes a cavity.
As a result of a study of the technology described above, however, the inventors of the present invention identified the following problems.
The substrate-side bonding electrode is placed between the substrate-side input electrode and the substrate-side output electrode. That is, the substrate-side input electrode, the substrate-side bonding electrode and the substrate-side output electrode are laid out along a straight line beside a side of the semiconductor chip.
In general, the substrate-side electrode is formed by adopting a screen printing technique. Thus, the area occupied by the substrate-side electrode is larger than the chip-side electrode which is formed by adopting a photolithography technique. In addition, a through-hole wire is formed right below the substrate-side electrode in order to make the propagation path short. Since the area of the through-hole wire in the plane direction (that is, the external size) has to be increased to a certain degree in order to give a low resistance, the area occupied by the substrate-side electrode becomes larger. Thus, when the substrate-side input electrode, the substrate-side bonding electrode and the substrate-side output electrode are laid out along a straight line beside a side of the semiconductor chip, the array of these electrodes is long. As a result, the chip-side input electrode and the substrate-side input electrode do not face each other anymore and, at the same time, the chip-side output electrode and the substrate-side output electrode also do not face each other as well. For this reason, the input and output wires become longer. When the input and output wires become longer, the inductance increases, causing the high-frequency characteristic to deteriorate. As a consequence, the gap between the amplifying means at the front stage and the amplifying means at the rear stage needs to be widened to make the input and output wires shorter. In this case, however, the area occupied by the semiconductor chip increases, giving rise to a hindrance to miniaturization of the high-frequency power amplifier.
An effect of the shield bonding wire 13000a of the conventional technology described above is explained by referring to FIG. 15. FIG. 15 is a diagram showing computed values of a coupling coefficient (or the mutual inductance expressed in terms of nH) between parallel input and output bonding wires of an amplifier. The 2 bonding wires each have a length of 1 mm (which is close to the real thing) and have bonding portions separated from each other by a distance d. A dotted line representing a coupling coefficient of 0.12 shows that the amplifier operates in a stable state for a coupling coefficient of 0.12 or smaller. The value 0.12 is found from FIG. 16 which shows a relation between the coupling coefficient and a coefficient of stability of the amplifier. The amplifier operates in a stable state for a coefficient of stability of at least 1. The bonding distance d cited above is defined as a distance between the centers of the bonding portions of the 2 bonding wires which are closest to each other.
FIG. 15 indicates that the conventional technology taking a countermeasure of providing shield bonding wires results in small coupling coefficients in comparison with a case with no shield bonding wires (which is denoted by a phrase xe2x80x98No countermeasurexe2x80x99 in the figure) and, hence, exhibits an improved high-frequency characteristic. In addition, for coupling coefficients not exceeding 0.12, the countermeasure allows a wider range of the distance d between bonding portions, raising the degree of design freedom. Moreover, the distance d between bonding portions can be decreased to 0.55 mm, allowing the chip area to be made smaller. As a result, the module can be made small in size and the cost can be reduced.
In actuality, however, since the inductance of a via hole is added in series to each end of the shield bonding wire 13000a, a sufficient improvement of the high-frequency characteristic can not be achieved by the conventional technology
It is thus an object of the present invention to provide a technology that is capable of making a semiconductor device small in size.
To be more specific, it is an object of the present invention to provide a high-frequency power amplifier module that is capable of further improving the high-frequency characteristic thereof.
The present invention as well as other objects and novel characteristics thereof will become more apparent from the description of this specification and accompanying diagrams.
An outline of a representative of the present invention disclosed in this patent application is described briefly as follows.
A semiconductor device comprises: a semiconductor chip having a square surface; a wiring substrate having a main surface thereof used for mounting the semiconductor chip; a first electrode formed on a first area of a main surface of the semiconductor chip and placed at a location in close proximity to a side of the semiconductor chip; first amplifying means formed on the first area of the main surface of the semiconductor chip and provided with an input unit electrically connected to the first electrode; a second electrode formed on a second area of the main surface of the semiconductor chip and placed at a location in close proximity to the side of the semiconductor chip; second amplifying means formed on the second area of the main surface of the semiconductor chip and provided with an output unit electrically connected to the second electrode; a third electrode formed on a third area between the first and second areas of the main surface of the semiconductor chip; a fourth electrode formed on the main surface of the wiring substrate to face the side of the semiconductor chip and electrically connected to the first electrode by a first wire; a fifth electrode formed on the main surface of the wiring substrate to face the side of the semiconductor chip and electrically connected to the second electrode by a second wire; and a sixth electrode formed on the main surface of the wiring substrate to face the side of the semiconductor chip and electrically connected to the third electrode by a third wire with an electric potential thereof fixed at a reference level,
wherein:
the sixth electrode is placed at a location farther from the side of the semiconductor chip than the fifth electrode; and
the fourth electrode is placed at a distance from the side of the semiconductor chip about equal to a distance of the fifth electrode from the side of the semiconductor chip or at a location farther from the side of the semiconductor chip than the sixth electrode.
Since a gap between the fourth and fifth electrodes in the semiconductor chip described above can be narrowed by an amount corresponding to the size of an area occupied by the sixth electrode, a gap between the first and second areas can also be made narrow as well. As a result, since the area occupied by the semiconductor chip can be shrunk, the semiconductor chip can also be made small in size.
In addition, the objects described above can be achieved by a high-frequency power amplifier module having a semiconductor chip thereof provided on a wiring substrate having a base thereof made of a dielectric material. The high-frequency power amplifier module is designed into a configuration wherein: amplifying transistors of two or more stages, a bonding input electrode for inputting a high-frequency power to the amplifying transistors and a bonding output electrode for outputting a high-frequency power from the amplifying transistors are provided on the semiconductor chip; an angle formed by a first auxiliary line connecting bonding portions to each other at the two ends of an input bonding wire connecting the bonding input electrode for a specific one of the amplifying transistors to the wiring substrate and a second auxiliary line connecting bonding portions (their centers) to each other at the two ends of an output bonding wire connecting the bonding output electrode for another amplifying transistor at a stage following the specific amplifying transistor to the wiring substrate is in the range 72 degrees to 180 degrees; and a gap between bonding portions of the bonding input electrode and the bonding output electrode is at least 0.3 mm but smaller than 0.8 mm.
In spite of the condition stipulating that the gap between bonding portions of the bonding input electrode and the bonding output electrode is at least 0.3 mm but smaller than 0.8 mm, the above objects can be achieved provided that the high-frequency power amplifier module is designed to give a coefficient of stability of at least one between the two amplifying transistors.


Product forming molds have surfaces conformally coated with a coating composite comprising superabrasive particles. In one embodiment, the mold surface is plated (electrolessly or electrolytically) or coated with a metal having superabrasive particles dispersed therein. In another embodiment, the composite is a SiC composite having superabrasive particles dispersed therein.

Molded articles such as glass lenses, screen panels for televisions, etc., require refracting surfaces of precise configuration and a high degree of surface smoothness. With respect to other molded articles such as glass bottles, containers, and the like, the requirement for surface smoothness is not as stringent, but there is a common requirement for the molding to be done at high temperatures of about 500° C. or higher. Accordingly, the mold to be used for glass forming has chemical and physical properties such as mechanical strength, heat resistance, and chemical stability against the high temperature mold glass, as well as other characteristics such as surface roughness, surface precision, and release property.
In the manufacture of glass articles, such as bottles, containers, and optical elements, molten glass can be supplied in gobs or charges from a furnace or hearth to a gob chute for conveyance to a split cavity glass forming mold maintained at a temperature of the order of about 500° C. or higher. The mold defines a forming cavity that is disposed with its axis generally vertical, and an access opening in one end of the mold that permits loading of the gob into the cavity. Stainless steel, nickel alloys, steel alloys, and free-machining metals such as aluminum are known as base materials for glass forming molds. In the glass molding process, masses of heat-softened vitreous material, known as gobs, are thrown into the mold (e.g., blank mold and neck ring). For example, in one type of process the mold, upon receipt of the molten glass gob, may be inverted and compressed air blown into it to spread the glass into the shape of the cavity and form the shape of the article. The halves of the mold are then separated, and the formed article is removed while still hot.
In another type of molding operation, such as a plastic molding operation a parison is formed in one mold, which is commonly referred to as the blank mold. This parison may include a neck cavity formed by a neck ring placed adjacent the blank mold to form the neck of the article. After forming the parison by either the above-described air pressure method or by use of the positive pressing force of a plunger inserted into the mold cavity, the parison is transferred to another mold called the blow mold and formed to a final shape by a blowing technique.
In both types of operations, lubricant is either sprayed onto the empty mold cavity by automated mechanical devices or, alternatively, applied by hand swabbing. The lubricant is used to protect the mold from the glass and oxidation, as well as to lubricate the mold/glass interface during molding. Release, lubricating or parting agents have been used in the form of an oil (swabbing compound) containing graphite at intervals of several tens of minutes. The lubrication of the various parts of the mold, including the neck ring, the bottom plate, the mold cavity and the plunger used in the press and blow process, is used to improve gob loading and to improve the release of the formed glass products from the mold and prevent flaws in the product caused by sticking.
There are several significant disadvantages in lubricating molds, either by hand or automatically. Hand swabbing, aside from being hazardous, requires application of lubricant at a time when the cycle of the machine mechanism permits. Mechanized spray units complicate the cycle of the machine and require that the mold parts to be lubricated be made accessible for insertion of a spray nozzle and time allowed for spraying and removal of the nozzle before beginning the forming cycle again. In the application of a release agent or lubricant to a mold surface by hand or an automated sprayer station, one or more cycles of molding may be missed because of the time required for the swabbing or spraying operation. Sprayer stations add to the cost and maintenance of the molding process. These combine to decrease productivity, increase costs, and may result in non-uniform, excessive or incomplete lubrication of the mold parts. Since the mold may be heated at a high temperature of about 500° C. or more, oil soot generates to deteriorate the working environment. Moreover, any graphite applied in excess amounts can adhere to the surfaces of the glass causing the products to be fouled.
Several patents describe prior attempts to address these problems. For example, Sano, et al. in U.S. Pat. No. 5,595,639 teaches coating the inner surface of the glass-forming mold a nickel or nickel-based alloy composition comprising chiefly nickel and graphite granules. Hagerty, et al. in U.S. Pat. No. 4,747,864 discloses glass-forming molds coated with an optically smooth titanium nitride surface. Blair in U.S. Pat. No. 4,168,961 discloses molds having molding surfaces of a silicon carbide/glassy carbon mixture. Copeland in U.S. Pat. No. 3,244,497 discloses glass forming mold parts having surfaces coating with refractory nitrides, carbides, oxides, borides and boride complexes. Blair et al. in U.S. Pat. No. 4,139,677 proposes a molding surface of silicon carbide or silicon nitride. Oiwa et al. in U.S. Patent Publication No. 2003/0005725 teaches coating the mold with a chromium-plated coating film and subsequently a coating containing a silicon compound. Christini et al. in U.S. Pat. No. 3,936,577 and RE 33,767 disclose methods for concomitant particulate diamond deposition in a metal by electroless plating on substrates. Spencer discloses in U.S. Pat. No. 4,906,532 particulate diamond composite coatings for textile tools by electroless deposition where the diamond has at least two nominal sizes. Feldstein discloses in U.S. Pat. No. 6,309,583 a method of making composite coatings with enhanced thermal properties by electroless deposition that include diamonds. All of the references listed in this paragraph are incorporated into the present disclosure in their entirety by reference.
There is still a need for mold components having improved wear and release properties.

Product forming molds and methods to manufacture same


A powered operating device such as a powered toothbrush includes a test button for momentarily testing the operability of the device. The test button simultaneously presses against both the on portion and the off portion of the switch which controls the operation of the device. While pressure is applied to the test button, the device is placed in its operative condition and when the pressure is released, the geometric structure of the test button held by the package releases the on portion of the switch at the same time or just before the off portion. Thus, assuring that the switch turns off.

For some powered items, such as a powered toothbrush, it is preferable for the consumer to be able to try to experience the function of the item before a purchase is made. Many powered items use a spring switch to provide the item with the ability to be turned on and off. In normal use of such items the user will press the "on" portion of the switch to activate and set the switch in the on position. Once in the on position the switch remains in this position until the "off" position is depressed to set the spring switch in the off position. Various attempts have been made to provide test structure, frequently referred to as "try me", in order to permit the user to test the operation of the item.
Some attempts have been made in the field of power toothbrushes to permit a prospective purchaser of a powered toothbrush to test the operability of the toothbrush. One of the concerns is that the testing should be of a momentary nature so that a tested toothbrush will not remain in its on or operating condition after the test. One approach that has been taken is to use a pressing movement of the switch for the momentary actuation and a sliding movement for the continuous operation. Examples of this approach are found in U.S. Pat. Nos. 6,000,083, 6,189,693, 6,311,837, 6,371,294 and 6,564,940 and U.S. Published Patent Application Nos. 2001/0004781, 2001/0022277, 2002/0020645, 2002/0032941, 2002/0038772 and 2002/0078514. A disadvantage with this type of approach is that the user is required to use different motions for either testing or continuously operating the toothbrush.
A further approach at providing only momentary actuation for test purposes of a power toothbrush is to provide separate switches, one switch being for the test purposes giving momentary actuation and the other switch being for continuous operation. Examples of this approach are found in U.S. Published Application Nos. 2002/0017474 and 2002/0029988. A disadvantage with this approach is that the user must be careful as to which switch is being actuated. Other examples of providing power testing of toothbrushes and the like are found in U.S. Pat. Nos. 4,925,025, 5,118,222 and 5,494,252 and in U.S. Published Application Nos. 2003/0000031, 2003/0066145, 2003/0135940 and 2003/0205492. Other examples include European Patent Application EP 0 587 406 and Japanese Application JP 402109226.


A vehicle includes a powertrain having an engine and an electric machine (M/G) connected by an upstream clutch, and a gearbox connected to the M/G by a torque converter. A controller is configured to, in response to a Park or Neutral gear selection and an electrical power request from the M/G, operate the engine at an engine speed and an engine torque based on the request and M/G speed and torque for improved powertrain efficiency. A method is provided for controlling a vehicle. In response to a Park or Neutral gear selection and an electrical power request from the M/G, the engine is operated at an engine speed and an engine torque based on the request and M/G speed and torque for improved powertrain efficiency.

Hybrid electric vehicles (HEV's) utilize a combination of an internal combustion engine with an electric machine to provide the power and torque needed to propel the vehicle. This arrangement provides improved fuel economy over a vehicle that has only an internal combustion engine. Because there are multiple power sources, the vehicle or powertrain efficiency may be increased based controlling the operation of the engine and the electric machine.

Method and system for selecting an engine operating point for a hybrid vehicle


An anti-reflective film includes a polarizing film and a compensation film, where the polarizing film includes a polymer, and a plurality of dichroic dyes having an absorption wavelength region in a range from about 380 nanometers to about 780 nanometers, and a reflective color of the anti-reflective film is substantially in a range of −5≦a*≦5 and −5≦b*≦5 in CIE-Lab color coordinates.

1. Field
The disclosure relates to an anti-reflective film and a display device including the anti-reflective film.
2. Description of the Related Art
A display device, such as a liquid crystal display ("LCD") and an organic light emitting diode ("OLED"), for example, typically includes a polarizing plate provided on an outer surface of a display panel thereof. The polarizing plate only transmits light of a specific wavelength range and substantially absorbs or reflects light outside of the specific wavelength range, such that the polarizing plate may control the direction of incident light on the display panel or light emitted from the display panel.
The polarizing plate generally includes a polarizer and a protective layer for the polarizer. The polarizer may include, for example, iodine or a dichroic dye, which is adsorbed and arranged in polyvinyl alcohol ("PVA"), and the protective layer may include, for example, triacetyl cellulose ("TAC").
Recently, a polarizing film that does not include a protective layer has been researched. Such a polarizing film may be combined with a compensation film, and may function as an anti-reflective film which effectively prevents reflection of external light.

Polarizing film, anti-reflective film and display device including the same


A metal utilized for forming a silicide film is left even after completion of the reaction to produce silicide. A conductive film made of a material other than the metal is grown on the metal. A local interconnection overlapping the silicide layer is formed by the conductive film and the metal remaining after formation of silicide.

1. Field of the Invention
The present invention relates to a semiconductor device and a method for manufacturing the same. In particular, it relates to a semiconductor device provided with a local interconnection for making electrical connection among conductive regions and a method of manufacturing the same.
2. Description of the Prior Art
As the integration level of semiconductor devices including CMOS or Bi-CMOS circuits becomes high, silicide layers of titanium (Ti), cobalt (Co), nickel (Ni), platinum (Pt) and the like are generally utilized to form gate electrodes, source layers and drain layers for the purpose of reducing the parasitic resistances and the parasitic capacitances thereof.
Silicide layers can be formed by the salicide technique. Namely, after forming insulating sidewalls on the both sides of the gate electrodes, a metallic film is formed on the entirety of the transistor formation area, followed by reaction between the metallic film and silicon of the source electrode, the drain electrode and the gate electrode in order to form silicide layers respectively on the upper surface of the source electrode, the drain electrode and the gate electrode in a self-alignment manner. This method is described in U.S. Pat. No. 4,384,301.
Ti has been frequently utilized for formation of the silicide layer. It is known to introduce, nitrogen into the atmosphere for thermal treatment in order to form a silicide layer on the surface of the Ti film, as illustrated in U.S. Pat. No. 4,545,116. In accordance with this technique, a TiN film is successively formed after formation of a TiSi film in the nitrogen atmosphere and utilized for forming a local interconnection by making use of the TiN film, which is conductive and functions as a barrier layer for preventing impurity diffusion.
Local interconnection of this type are described also in U.S. Pat. No. 4,821,085, U.S. Pat. No. 4,804,636 and U.S. Pat. No. 4,657,628.
The advantages of a local interconnection have been frequently reported. For example, in U.S. Pat. No. 4,746,219, neighboring devices are connected by means of a local interconnection. Also, in U.S. Pat. No. 4,975,756, an SRAM is constructed by cross-coupling CMOS inverters by means of local interconnection. Furthermore, in U.S. Pat. Nos. 5,010,032 and 4,890,141, n-type and p-type polysilicon gate electrodes formed from a polysilicon layer are connected to each other by means of local interconnection in order to prevent two type impurities contained in the polysilicon layer from interdiffusion.
Meanwhile, when the TiN layer formed on the TiSi layer is utilized to form a fine local interconnection, the TiN layer has to be locally removed from the TiSi film, an oxide film or the like underlying surface by etching.
The removal of the unnecessary TiN film may be carried out, for example, by dry etching with a chlorine compound gas as illustrated in U.S. Pat. No. 4,793,896, U.S. Pat. No. 4,863,559 and U.S. Pat. No. 4,957,590 or by dry etching with a gas of freon system as illustrated in U.S. Pat. No. 4,675,073. However, in accordance with such etching, the selectivity ratio of TiN respective to the underlying surface made of TiSi or an oxide can not be sufficiently secured and often fluctuates during the etching process in any case of the conventional techniques.
In order to avoid the above problem, it has been proposed to switch the composition of the etchant gas in the middle of the etching process as described in U.S. Pat. No. 5,122,225. However, the control of the process becomes complicated to switch the composition of the etchant gas in the middle of the etching process, resulting in the need for a large process margin.
Also, an appropriate material for formation of a local interconnection can be selected in order to improve the selectivity ratio of TiN respective to the underlying silicide layer, as illustrated in U.S. Pat. No.4,980,020. In the description of the patent, a local interconnection is formed by forming the silicide layer with a different material by sputtering on the silicide layer.
When sputtering is utilized for the deposition of a local interconnection layer, the surface of the silicide layer has to be subjected to reverse RF sputtering etching treatment in order to decrease the contact resistance between the silicide layer and the local interconnection. However, since the very thin edge of the field oxide film surrounding the silicide layer is removed by the etching treatment, the junction within the semiconductor substrate comes to slightly appear after the removal of the very thin edge, resulting in the increased chance of causing junction leakage near the exposed surface.
Another technique for decreasing the contact resistance between the silicide layer and the local interconnection is described in the U.S. Pat. No. 5,190,893. In accordance with this technique, after formation of the silicide layer, a film for formation of a local interconnection is grown anew by making use of an appropriate material for improving the etching selectivity ratio thereof respective to the underlying silicide layer and patterned in the form of a local interconnection, followed by thermal treatment for nitrogenization in order to alloy the local interconnection with the underlying silicide layer, resulting in a decreased contact resistance.
In this case, although the contact resistance is certainly decreased, there is a possibility of accidentally increasing junction leakage of drain and source regions since the silicide layer tends to undergo reaction in nitrogen during the alloying process by thermal treatment.
As described above, while it is important to increase the etching ratio of a local interconnection more than that of the underlying silicide layer during patterning the local interconnection, it is effective for improving the selectivity ratio to make use of a material other than the silicide for forming the local interconnection. However, there is no report sufficiently discussing the technique to decrease the contact resistance between the silicide layer and the local interconnection without causing junction leakage at the periphery of the silicide layer.

Method for manufacturing a semiconductor device


A pumping unit system having vertical sampson post, a walking beam pivotally supported at the upper end of the sampson post and a horsehead affixed at a forward end thereof that supports a reciprocated sucker rod string, including a gear reducer mounted at selectable positions on the walking beam and having a horizontally extending drive shaft, a crank arm affixed to the drive shaft the spacing between a selectable length pitman rod having a first end secured to said crank arm and a second end having a pitman bearing that is selectably mountable to a plurality of pitman bearing locations and a prime mover connected to the gear reducer and wherein the characteristics of the pumping unit are determined by the selectable position of the gear reducer, the selectable length of the crank arm, the selectable length of the pitman rod, and the selectable pitman bearing location.

1. Field of the Invention
The present invention relates to a pumping unit for actuating a down hole pump for pumping fluid, primarily crude oil, from subterranean oil-bearing formations to the earth's surface. More particularly, the present invention relates to a pumping system that includes a sampson post extending upwardly from a base supported on the earth's surface, a walking beam pivotally supported by a saddle bearing at the sampson post upper end with a horsehead affixed at a forward end of the walking beam to receive the upper end of a downwardly extending sucker rod string by which a subsurface pump is vertically reciprocated, the system including a gear reducer mounted on the walking beam for rotating a crank arm. The crank arm has affixed at the outer end thereof a crank pin bearing which secures one end of a pitman rod, the opposite end of the pitman rod being affixed by a pitman bearing to a variably pitman bearing location relative to the sampson post by which the characteristic of the pumping unit upward work strokes and downward return strokes can be selectably varied.
2. Prior Art
A primary source of energy as used by the world today is derived from crude oil. Oil-bearing formations deep below the earth's surface are the source of crude oil. Bore holes are drilled from the earth's surface downwardly to penetrate crude oil producing formations. In some parts of the world such formations have sufficient formation pressure that crude oil is forced to the earth's surface in which case the crude oil is recovered without being pumped. In other parts of the world formation pressures are insufficient to force the crude oil to the earth's surface and therefor the crude oil must be pumped. In many instances when a formation is initially penetrated the formation pressure causes the crude oil to flow to the earth's surface but after a time as quantities of crude oil are removed from the formation the formation pressure drops so that it then becomes necessary to pump the crude oil to the surface.
Various systems exist for pumping crude oil from a subterranean formation including hydraulic pumping systems, electric pumping systems in which a motor rapidly rotates a centrifugal pump, and so forth. However, the most commonly used system for extracting crude oil from a producing formation is by the use of a reciprocating string of sucker rods that extend within a bore hole from the earth's surface to a positive displacement, reciprocating pump. At the earth's surface a system must be provided for sequentially reciprocating the sucker rods in up and down fashion. The most common mechanism for performing this work is referred to as a pumping unit. The common type of pumping unit includes a base mounted on the earth's surface. Upwardly extending from the base is a post, sometimes referred to as a sampson post. At the top of the sampson post is a saddle bearing that pivotally supports a walking beam. The walking beam has at one end a "horsehead" that receives a wire line or cable that passes over a convex outer face of the horsehead, the outer face being curved with reference to saddle bearing as pivotal axis of the walking beam. The wire line connects at its lower end to the upper end of the string of sucker rods. The sucker rods are vertically reciprocated by the pivotation of the walking beam in a vertical plane.
Various systems have been devised for providing the pivotal action of a walking beam supported on a sampson post to achieve the reciprocal action necessary to move sucker rods to actuate a bottom hole pump. The invention herein relates to such a system.
A typical bottom hole pump includes a piston vertically reciprocating in a cylinder, the piston being connected to the sucker rod string so that as the horsehead of the pumping unit is pivoted the sucker rods move the pump piston in an oscillatory cycle. The upward movement of the sucker rods caused by the pivoting walking beam is usually termed a "work stroke" and downward movement that permits the pump piston to return to the lower part of the pump barrel as referred to as a down or "return stroke."
Various means have been devised for reciprocating the walking beam. Further, it is important that the walking beam be counterbalanced to counteract the huge weight of the string of sucker rods that extend from the earth's surface. The length of a string of sucker rods may vary from a few hundred feet to a few thousand feet and accordingly constitute a substantial weight. Further, as the sucker rod string is moved upwardly, the column of fluid within the well bore hole is simultaneously moved upwardly to elevate the fluid to the earth's surface that constitutes the well's production.
The typical, that is the most common pumping unit, employs a gear reducer mounted on a slab or base that rests on the earth's surface. The gear reducer has a horizontal rotating shaft extending therefrom. A crank arm has one end affixed to the rotating shaft. At the other end of the crank arm is a bearing that receives the first end of a pitman rod. The second or upper end of the pitman rod is affixed to the walking beam. Rotative energy is supplied by a prime mover to the gear reducer to rotate the crank arm and thereby oscillate the pitman rod to cause the pumping unit walking beam to pivotally reciprocate in a vertical plane.
This typical type of pumping unit requires substantial counterbalancing. For this reason, weights are affixed to the walking beam to help offset the weight of the sucker rod string plus the weight of fluid being lifted. Many pumping units in use today include dynamic counterbalance weights that rotate with the crank arm. Properly designing and operating a pumping unit, particularly for a deep well, is an exacting science.
A complicating factor with respect to a pumping unit design is caused by the elasticity of the sucker rod string. That is, as the pumping unit pivots to lift the sucker rod string and accordingly the weight of the column of fluid in the well bore hole, the sucker rods stretch due to the elasticity of the steel or other metal alloys of which the sucker rods are constructed. When the sucker rods are in the downward or return stroke mode the sucker rods contract. The extension and contraction of a sucker rod string can introduce complex standing wave phenomena that must be taken into consideration in the design and operation of pumping units, especially for deeper wells.
Much creative work has been done in designing pumping units. The American Petroleum Institute has published works relating to the design and operation of pumping units entitled, "API Specification For Pumping Units, American Petroleum Institute, Washington D.C." and issued by the American Petroleum Institute Production Department, 211 N. Irvay, Suite 1700, Dallas, Tex. 75201. This document was published in 1984 and is a standard reference for those engaged in designing and operating pumping units.
For reference to prior issued United States patents that provide a good background relating to the subject matter of pumping units and therefore specifically relating to the subject of this invention, reference may be had to the following previously-issued United States patents:
U.S. Pat.No.InventorTitleIssue Date4,660,426MosleyPUMPING UNIT FORApr. 28, 1987ACTUATING A DOWNHOLE PUMP WITHSTATIC AND DYNAMICCOUNTERWEIGHTS1,986,012PattersonPUMP ACTUATINGJan. 1, 1935MECHANISM4,603,592SieboldOFF-VERTICALAug. 5, 1986et alPUMPING UNIT2,958,237JohnsonSTROKE ADJUSTINGNov. 1, 1960MECHANISM4,505,162Hoh et alOIL WELL PUMPINGMar. 19, 1985APPARATUS AND METHOD5,105,671SlaterWELL PUMPING UNITApr. 21, 1992WITH ADJUSTABLEBALANCE BEAM4,502,343DingfelderPUMP JACKMar. 5, 19853,371,554McCrayINTEGRAL CRANK ANDMar. 5, 1968et alPHASEDCOUNTERWEIGHT ARM2,294,094O'LearyCOUNTERBALANCEDAug. 25, 1942PITMAN GEARING

Pumping unit with variable work stroke and return stroke torque factor characteristics


A substrate work system is provided which can reduce the time taken to deal with a communication error by notifying information on the communication error. First confirmation processing section of mounting device determines a cause for a communication error in a communication line between two devices in response to an occurrence of a communication error in first network. Display device displays a result of the confirmation by first confirmation processing section in addition to a message informing that a communication error occurs in first network. As a result, an operator of substrate work system can confirm in which communication path or the like the communication error is possibly occurring in first network by checking the content displayed on display device.

For example, as a technique related to a FA (Factory Automation) network, there is a technique related to a communication error between a robot controller and a master unit (for example, Patent Literature 1). In this FA network, when multiple communication errors are detected during robot adjustment work, only a first communication error is made effective (and second and subsequent communication errors are discarded). As a result, the adjustment work is prevented from being suspended.


An electrical compression connector having a first section with a first main conductor receiving channel extending into a top side of the connector; and a second section integrally formed with the first section. The second section has a first tap conductor receiving channel and a second tap conductor receiving channel extending into opposite respective first and second lateral sides of the connector. The tap conductor receiving channels comprise different shapes and different cross sectional areas. Bottom portions of the second section extend laterally outward past lateral sides of the first section.

1. Field of the Invention
The present invention relates to electrical connectors and, more particularly, to an electrical compression connector.
2. Brief Description of Prior Developments
U.S. Pat. No. 5,898,131 discloses a twisted H-shaped electrical connector. A hydraulic compression tool can be used to compress the connector for connecting two conductors to each other at the same time. FCI USA Inc. sells electrical compression connectors under the part designation YH292C which are specifically designed for the telecommunications industry for making parallel and tap connections to copper Class I and Class K stranded conductors.
Class K conductors are more flexible than Class I conductors. This increased flexibility is provided by a substantially larger number of individual strands in the conductor. For example, a 2 AWG Class I copper stranded conductor has 161 strands and a 2 AWG Class K copper stranded conductor has 665 strands. The individual strands of a Class K conductor have a smaller diameter than the individual strands in a Class I conductor (0.01inch versus 0.201 inch). However, a Class K conductor has a larger outer diameter than a Class I conductor of the same electrical size (i.e., a 2 AWG Class K conductor has a 0.338 inch nominal diameter, and a 2 AWG Class I conductor has a 0.319 inch nominal diameter).
For the YH292C connector, the largest tap conductor receiving channel can accept and be properly crimped onto a Class I conductor between 2-6 AWG or a Class K conductor between 3-8 AWG. The YH292C connector cannot be properly crimped onto a 2 AWG Class K conductor at its largest tap conductor receiving channel. The largest tap conductor receiving channel is too small to properly receive and connect to the larger diameter Class K conductor. Although a 2 AWG Class K conductor can be placed inside the largest tap conductor receiving channel of the conventional YH292C compression connector, during compression strands of the Class K conductor are pushed out of the lateral side aperture of the tap conductor receiving channel before the aperture is closed. This creates a problem electrically due to the small percentage of strands actually contained in the compressed conductor tap receiving channel. These non-contained stands can also contact and thereby cause problems with nearby electrical or electronic components. In addition, these strands can break off of the conductor and cause additional problems with nearby electrical or electronic components. , The smaller tap conductor receiving channel for the YH292C connector can accept and be properly crimped onto a Class I conductor between 8-14AWG or a Class K conductor between 10-14 AWG. The YH292C connector cannot be properly crimped onto an 8 AWG Class K conductor at its smaller tap conductor receiving channel. The smaller tap conductor receiving channel is too small to properly receive and connect to the larger diameter Class K conductor. Although an 8 AWG Class K conductor can be placed inside the smaller tap conductor receiving channel of the conventional YH292C compression connector, during compression strands of the Class K conductor are pushed out of the lateral side aperture of the tap conductor receiving channel before the aperture is closed.
There is a desire to provide an electrical compression connector with tap conductor receiving channels which can be used with Class I and Class K conductors having the same electrical wire size. There is also a desire to provide an electrical compression connector adapted to be connected to a Class I conductor or a Class K conductor of the same size and can be compressed onto the Class K conductor without strands of the conductor being pushed out of a lateral side aperture into the tap conductor receiving area before the aperture is closed.
In accordance with one aspect of the present invention, an electrical compression connector is provided having a first section with a first main conductor receiving channel extending into a top side of the connector; and a second section integrally formed with the first section. The second section has a first tap conductor receiving channel and a second tap conductor receiving channel extending into opposite respective first and second lateral sides of the connector. The tap conductor receiving channels comprise different shapes and different cross sectional areas.
In accordance with another aspect of the present invention, an electrical compression connector is provided including a first section having a first main conductor receiving channel extending into a top side of the connector; and a second section integrally formed with the first section. The second section has a first tap conductor receiving channel and a second tap conductor receiving channel extending into opposite respective first and second lateral sides of the connector. The tap conductor receiving channels comprise different shapes or sizes, and bottom portions of the second section extend laterally outward past lateral sides of the first section.
In accordance with another aspect of the present invention, an electrical compression connector is provided including a first section having a first main conductor receiving channel extending into a top side of the connector; and a second section integrally formed with the first section. The second section has a first tap conductor receiving channel and a second tap conductor receiving channel extending into opposite respective first and second lateral sides of the connector. Lateral sides of bottom portions of the second section extend laterally outward past lateral sides of top portions of the second section. The first tap conductor receiving channel is sized and shaped to fully crimp onto a 2 AWG size Class K conductor. The second tap conductor receiving channel is sized and shaped to fully crimp onto an 8 AWG size Class K conductor. The second section is about 1 inch wide or less and, less than about 0.7 inch high.


Biocompatible particles, according to the present invention, have encapsulated nanoparticles comprising a liposome including a drug therein, and comprise a PEO-PPO-PEO copolymer which is associated on a surface of the liposome. The biocompatible particles, according to the present invention, can flexibly control a drug release rate regardless of the solubility unique to the drug due to increased stability in an aqueous solution, thereby exhibiting continuous drug release. Also, the present invention exists stably in a powder form, thereby providing convenience for storage and administration. Therefore, the biocompatible particles according to the present invention can be useful as a drug delivery carrier.

Most drugs are classified into hydrophobic and hydrophilic drugs. Hydrophobic drugs exhibit limited solubility in an aqueous solution, and thus are difficult to be effectively delivered in vivo. Hydrophilic drugs exhibit excellent initial expression of drug effects due to high solubility, but encounter difficulties in continuous drug release, and thus require frequent drug administration. To overcome these difficulties, development of various drug delivery carriers using nanoparticles has continued, and studies on polymeric drug delivery carriers, lipid drug delivery carriers, and nano tubes are actively progressing. As a polymeric drug delivery carrier, a polymer-drug conjugate, a polymer micelle, or a dendrimer is used.
However, such drug delivery carriers exhibit fast drug release due to instability in an aqueous solution, and particularly, when an hydrophilic drug or protein drug and antibodies are loaded, fast drug release is induced due to excellent solubility in an aqueous solution, thereby making it difficult to realize desired drug effects. To overcome this problem, repeated drug administration is required, and in the case of an expensive protein drug or antibody, an increase in treatment cost is expected.
Meanwhile, since a liposome may be composed of several kinds of lipid molecules, and most phospholipids constituting the liposome are not toxic or harmful to a human body, it is receiving attention as an effective drug delivery carrier. In Korean Patent Publication No. 0792557, liposome-type nanoparticles prepared and used as a drug delivery carrier are disclosed.
However, physical stability is not ensured in particles using a liposome, and therefore various studies to ensure stability have been attempted. For example, a specific surfactant was added to a liposome to induce an increase in stability, electrostatic charge lipids were added to components for a liposome, or sterols, anionic lipids or spingo lipids were introduced. To this end, studies to enhance stability of a liposome have been continuously performed, but the techniques have not exhibited sufficient physical stability, and thus utilization in the pharmaceutical field has been limited.
Therefore, development of new types of biocompatible particles which may increase safety in an aqueous solution, maintain an excellent redistribution function in the aqueous solution when prepared in a powder type, and flexibly control a drug release rate, thereby exhibiting a continuous drug release pattern, is required.

Biocompatible particles and method for preparing same


A gamma-ray compensated ionization chamber wherein the state of compensating a gamma-ray is controlled by utilizing the effect that a change in the applied voltage ratio of a high-voltage electrode to a compensating electrode changes the form of an electric field around the holes in a signal electrode.

1. Field of the Invention
The present invention relates to a gamma-ray compensated ionization chamber used for counting only neutrons under the presence of gamma rays in a nuclear reactor or the like.
2. Description of the Related Art
FIG. 1 is a schematic diagram showing the construction of a conventional gamma-ray compensated ionization chamber (hereinafter abbreviated as CIC) depicted, for example, in "Measurements of Nuclear Radiation" (pp. 98-102, Nikkan Kogyo Shimbun, Inc., 1978). As shown in the FIGURE, the CIC 10 comprises three cylindrical electrodes disposed concentrically: a high-voltage electrode 1 as the outermost electrode; a signal electrode 21 disposed inwardly spaced apart from the high-voltage electrode 1; and a compensating electrode 31 disposed inwardly spaced apart from the signal electrode 21. A high-voltage power supply 4 applies a high voltage +V.sub.H to the high-voltage electrode 1, while a compensating power supply 5 applies a compensating voltage -Vc to the compensating electrode 31. The neutron current obtained from the signal electrode 21 is amplified through an amplifier 6.
The inside surface of the high-voltage electrode 1 and the outside surface of the signal electrode 21 are coated with a neutron-sensitive material 7 such as .sup.10 B. The outside surface of the compensating electrode 31 is provided with a plurality of circumferentially extending grooves 8.
In operation, when the gamma rays emitted by the nuclear reaction and neutrons are radiated to the CIC 10, a neutron current In caused by the neutron-sensitive material 7 and a current I.gamma..sub.1 caused by the gamma rays flow through the space (neutron ionization chamber) between the high-voltage electrode 1 and the signal electrode 21. At the same time, another gamma-ray current I.gamma..sub.2 flows through the space (compensating ionization chamber) between the signal electrode 21 and the compensating electrode 31.
Because the applied currents from the high-voltage power supply 4 and the compensating power supply 5, respectively connected to the high-voltage electrode 1 and the compensating electrode 31, are opposite in polarities to each other, the ionization currents flowing in the two respective chambers flow in opposite directions to each other with respect to the signal electrode 21. When the current flowing to the signal electrode 21 is denoted as Isig, the following equation is given. EQU Isig=In+I.gamma..sub.1 -I.gamma..sub.2 ( 1)
If I.gamma..sub.1 and I.gamma..sub.2 are equal, we have EQU Isig=In (2)
Thus, the net neutron current without containing the gamma-ray current can be measured. This operation is the gamma-ray compensation employed in the CIC 10. The neutron current In is detected from the signal electrode 21 and is amplified through the amplifier 6.
Since an ionization chamber in which I.gamma..sub.1 and I.gamma..sub.2 are exactly equal is difficult to construct, a large number of narrow grooves 8 are provided on the outer circumferential surface of the compensating electrode 31 so as to exactly equalize I.gamma..sub.2 to I.gamma..sub.1 by controlling the voltage -Vc supplied from the compensating power supply 5. The reason that I.gamma..sub.2 is varied by the grooves 8 on the outside surface of the compensating electrode 31 is as follows.
Since the electric field strength inside the groove 8 is weak, ionized electrons are not completely collected so that the portion of the electrode 31 having the grooves 8 is ineffective an does not effectively function as an ionization chamber. The volume of this ineffective portion depends on the compensating voltage Vc supplied from the compensating power supply 5; it decreases as the voltage Vc increases. Therefore, the effective volume of the ionization chamber is varied by controlling the compensating voltage Vc so as to equalize I.gamma..sub.2 to I.gamma..sub.1.
In the above construction of the conventional gamma-ray compensated ionization chamber, the gamma ray current is compensated by controlling the compensating voltage Vc. The volume of the ineffective portion resulting from the weak field strength inside the grooves 8 is unstable, however, because the compensating conditions vary with changes in external conditions such as the intensity and energy of gamma rays, thus resulting in overcompensation or undercompensation.

Gamma-ray compensated ionization chamber


The present invention is to provide a silicone having (meth)acryl groups on both ends of a molecule and represented by the formula (I):

A silicone which has polymerizable groups on both ends and a hydrophilic side chain is known from the following Patent Literature 1. It is also known that this silicone is copolymerized with a polymerizable monomer to form hydrophilic contact lenses. The silicone is said to be suitable for medical applications, because it does not have a urethane bond. However, the silicone has a drawback that the conversion of the (meth)acryl groups on the ends of the silicone is not enough and, therefore, the physical properties of the contact lenses obtained vary depending on an amount of the unreacted monomers.    Patent Literature 1: Japanese Patent Publication No. Sho-62-29776/1987

Silicone for preparing ophthalmic devices

Abstract: wherein R1 is represented by the following formula:

Abstract: wherein n is 3 or 4, k is an integer of from 1 to 15, j is an integer of from 0 to 15, and Q2 is a methyl group or a hydrogen atom;                        R2 is, independently of each other, a group selected from the group consisting of hydrocarbon groups and halogenated hydrocarbon groups, both having 1 to 10 carbon atoms;        R3 is a group represented by the following formula:—CmH2mO(C2H4O)x(C3H6O)yQ1                     wherein m is 3 or 4, x is an integer of from 1 to 15, y is an integer of from 0 to 15, and Q1 is a methyl group or a hydrogen atom;                        a is an integer of from 1 to 500; and        b is an integer of from 1 to 100, with a total of a and b being 50 to 500.