An electrostatic discharge (ESD) protection circuit uses two N-channel field effect transistors (NFETs) to conduct ESD current from a first to a second supply node. During the ESD event, an ESD detection circuit couples the gates of both NFETs to the first supply node through separate conductive paths. In one novel aspect, an RC trigger circuit includes a capacitance that is charged through a resistance. The resistance involves a P-channel transistor whose gate is coupled to the gate of the second NFET. During a normal power-up condition, the P-channel transistor is conductive, thereby preventing the RC trigger from triggering if the supply voltage VDD were to rise rapidly. In another novel aspect, a novel level-shifting inverter drives the second NFET. The level-shifting inverter uses a pull down resistor to avoid snap-back and also isolates the gate of the second NFET from a capacitively loaded third supply node.

1. Technical Field
The disclosed embodiments relate to ESD protection circuits.
2. Background Information
Integrated circuits can be damaged by high voltage spikes produced by electrostatic discharge (ESD). High static charges can develop on the human body. Consider a situation in which a packaged integrated circuit is free and is not coupled to a printed circuit. Power and ground conductors within the integrated circuit may be resting at a first potential. If a person were charged with a static charge, and then were to touch a terminal of the integrated circuit, the high static voltage charge on body of the person might be discharged quickly through the terminal and into the integrated circuit until the integrated circuit and the human body equalize at a common potential. Such an electrostatic discharge event would momentarily introduce high voltages and high currents into the integrated circuit that may damage the integrated circuit. In one example, the gate dielectric material of a small logic transistor in the integrated circuit is thin and breaks down when a high voltage is momentarily present between its gate electrode and the underlying semiconductor material. During the ESD event, the gate dielectric breaks down and is permanently damaged. When the integrated circuit is later incorporated into a usable product, the product may be defective or inoperable due to the damage done to the integrated circuit during handling.
To prevent this situation, circuits called electrostatic discharge (ESD) protection devices are commonly incorporated into integrated circuits. An ESD protection circuit has circuitry that is able to shunt the momentary high currents of an ESD discharge event while dropping a low, non-destructive voltage. One type of ESD protection circuit is commonly referred to as an ESD "clamp." If the voltage between a voltage supply terminal and a ground terminal of the integrated circuit starts to increase rapidly as in an ESD event, then the ESD protection device becomes conductive and clamps one terminal to the other (or clamps one internal supply voltage bus to another). The clamping is such that the charge of the high voltage ESD event on one of the terminals is discharged through the ESD protection device and to the other terminal. The ESD event is only of a short duration, so after the ESD event the ESD protection device is no longer conductive. There are situations in which circuitry must be operated at a voltage higher than the rating of the semiconductor field effect transistors (FETs) used in the circuit. In such a case, a technique called "cascading" is used. In this technique, FETs of like polarity are placed in series to allow the circuit to operate above the voltage rating of the individual FETs. Such circuits require a bias voltage level between the positive supply terminal and the negative supply terminal.
FIG. 1 (Prior Art) is a circuit diagram of one conventional cascoded ESD protection circuit. Supply voltage conductor 1 is coupled to a first terminal and ground conductor 2 is coupled to a second terminal, and an intermediate supply 9 or cascode bias voltage is coupled to a third terminal. Assume that all nodes of the circuit are initially at the same potential. If the voltage on conductor 1 increases rapidly with respect to ground potential on conductor 2, then the large N-channel FETs 3 and 4 are made conductive to conduct possible ESD current from conductor 1 to conductor 2. The circuit involves two RC circuits. P-channel transistor 5 functions as a resistor and P-channel transistor 6 functions as a capacitor. P-channel transistors 7 and 8 are coupled together in similar fashion. Consider the RC circuit involving transistors 5 and 6. Initially, the capacitance of transistor 6 is discharged and there is no voltage drop across the capacitance of transistor 6. Node 10 is therefore at a digital low with respect to the supply voltages on leads 11 and 12 of inverter 13. When the voltage between conductors 1 and 9 increases rapidly, the capacitance of transistor 6 is charged relatively slowly through the resistance of transistor 5. As a result, a digital low is present on the input of inverter 13. Inverter 13 outputs a digital high, which causes the gate of large N-channel transistor 3 to be coupled to conductor 1. Large N-channel transistor 3 is made conductive. The lower portion of the circuit of FIG. 1 works in an identical fashion to the upper portion of the circuit. Accordingly, both large N-channel transistors 3 and 4 turn on quickly during an ESD condition when the voltage between conductors 1 and 2 is detected to rise rapidly. Transistors 3 and 4 discharge the static ESD charge, and prevent the voltage between conductors 1 and 2 from reaching high levels that would damage other sensitive circuitry within the integrated circuit.
After a short time, the capacitances of transistors 6 and 8 charge to the point that the voltages on nodes 10 and 14 reach the switching voltages of inverters 13 and 15. The inverters 13 and 15 then switch to output digital logic low values that in turn cause transistors 3 and 4 to be nonconductive. Once the large N-channel transistors 3 and 4 are nonconductive, then a voltage supply supplying VDD can be coupled to conductors 1 and 2 in a normal power-up condition. In a normal power-up condition, the voltage between conductors 1 and 2 does not rise quickly as in an ESD event. The voltages between conductors 1 and 9 and between conductors 9 and 2 increase slowly such that the capacitors of transistors 6 and 8 are always adequately charged and such that the voltage on nodes 10 and 14 remain above the switching voltages of inverters 13 and 15. Inverters 13 and 15 therefore always output digital logic low values. The transistors 3 and 4 therefore remain nonconductive. The voltage between conductors 1 and 2 can be raised in this fashion until the voltage between the conductors 1 and 2 is at the supply voltage VDD level. The ESD protection circuit does not conduct current from conductor 1 to conductor 2 during a normal power-up condition.
There are two common models used to test the adequacy of ESD protection circuits: the Human Body Mode (HBM) and the Charge Device Model (CDM). In the CDM model, the ESD pulses are of high current magnitudes but are of shorter duration than the ESD pulses in the HMB model. Under CDM testing, large N-channel transistors used to conduct ESD current in ESD clamps were noticed to fail. Ballasts were therefore provided and the voltage at which the ESD protection failed was successfully increased. It was, however, recognized that providing the ballasts increased the amount of integrated circuit area consumed by the ESD protection circuits. A P-channel transistor of similar construction, although it had a lower carrier mobility and therefore was made larger to conduct the same amount of ESD current as an N-channel transistor, was not seen to fail in the ESD protection circuit application. The amount of integrated circuit area consumed by the P-channel transistor was sometimes less than the amount of integrated circuit area consumed by a smaller N-channel transistor and its associated ballast. Accordingly, ESD protection circuits came to use P-channel transistors for the large ESD current carrying transistors.
FIG. 2 (Prior Art) is a diagram of an ESD protection circuit employing P-channel transistors P1 and P2 for the large ESD current carrying transistors. During a rapid rise of the voltage between conductor 16 and ground conductor 17, the RC circuit 18 initially provides a digital logic low onto the input lead 19 of inverter 20 with respect to the supply voltages on inverter 20. Inverter 20 therefore outputs a digital logic high onto the input lead 23 of inverter 21, which in turn couples the gate of P1 to the low potential on node 22. Transistor P1 is therefore made conductive. The low potential on node 22 is directly coupled to the gate of transistor P2, so transistor P2 is also conductive. Node 23 is coupled to conductor 16 by inverter 20, so node 23 has a higher potential than does node 22. The voltage on node 22 is below the switching threshold of inverter 23. Inverter 24 therefore outputs a digital high voltage (the voltage on node 23) onto the gate of transistor 25, thereby making transistor 25 conductive and keeping the voltage on node 22 coupled to ground potential. The ESD current is conducted from conductor 16, through transistors P1 and P2, and to ground conductor 17.
After the passing of the ESD event, the voltage on node 19 increases with respect to the voltage on conductor 22 to the point that the switching threshold of inverter 20 is reached. Inverter 20 switches, inverter 21 switches, and the gate of transistor P1 is coupled to conductor 16 by inverter 21. Transistor P1 is then turned off. At this time, node 23 is coupled to node 22 by the pulldown transistor in inverter 20. The voltage on the input lead of inverter 24 is no longer below the switching point of inverter 24. Inverter 24 therefore switches and couples the gate of transistor 25 to ground conductor 17, thereby turning transistor 25 off. Because node 22 is no longer coupled to ground conductor 17, the voltage on node 22 rises and turns transistor P2 off. Accordingly, after the ESD event both large P-channel transistors P1 and P2 are nonconductive. Under normal operating conditions with a voltage applied to supply conductor 16, an intermediate voltage to conductor 22, and ground to ground conductor 17, the gate of transistor P1 is held to its source potential thereby biasing transistor P1 off. The gate of transistor P2 is held at the potential of conductor 22, thereby lowering the drain-to-source potential of transistor P1 to a safe level.

N-channel ESD clamp with improved performance


A combination toothpick holder and toothpick which is formed of a tube having cylindrical openings in which a plurality of toothpick ends are inserted, stored and used. The toothpick holder inside diameter is such to frictionally grip the toothpick ends and hold them in place both in the holder and in the ready to use position. The toothpick ends are made of a reusable plastic material and are provided with pointed ends especially configured for cleaning teeth.

The present invention relates to reusable toothpicks, and in particular to a combination toothpick holder and reusable toothpicks dispensed from the holder.
Prior toothpicks have taken many shapes and have been composed of many materials. Wooden toothpicks, for example, may have a single pointed end and a flat end with an arcuate shape, or both ends may be pointed. Plastic toothpicks may be shaped like the described wooden toothpicks or they may be of tubular shape with diagonally sharpened ends.
There are inherent problems with the prior art toothpicks, wooden toothpicks can break or splinter, resulting in possible mouth or finger damage. On the other hand, plastic toothpicks can be very hard which if improperly used can cause tooth or gum damage. Another problem exists with both wooden or plastic toothpicks, if they are not immediately disposed of, they may be reused. Reusing such toothpicks can cause sanitary health issues.
Heretofore, there has not been a toothpick holder for storing and dispensing toothpick ends. In fact, to the inventor's knowledge, there is only U.S. Pat. No. 579,139, issued to DEARDORFF, which shows a replaceable toothpick in a holder, with a recess for housing the toothpick and supporting it in a use position. There are multiple holders with a cavity to house a tool implement or plurals of the same. One example is U.S. Pat. No. 5,388,698, issued to WAKAO, which is directed to a carrier/dispenser for dispensing capsules.


For use with a power converter couplable to a source of electrical power and having a power switch coupled to a primary and tertiary winding of a transformer, the power switch capable of impressing an input voltage (Vin) across the primary winding and a duty cycle (D) of the power switch limited by a voltage applied to reset the transformer, a clamp circuit and method of increasing an efficiency of the power converter. In one embodiment, the clamp circuit includes: (1) first and second storage devices coupled between the primary and tertiary windings and (2) a switching circuit, coupled between the first and second storage devices, that selectively couples the first and second storage devices in a parallel configuration when the power switch is conducting and in a series configuration when the power switch is not conducting, thereby increasing the voltage to reset the transformer and increasing the duty cycle (D) to improve an efficiency of the power converter.

Increased power density is a continuing goal of modern power supply design. High power density is particularly crucial in applications wherein the allocated space for the power supply relative to the power output is restricted. In addition to being highly compact, the power supply must also be efficient to limit heat-creating power dissipation.
In low to medium level power applications (e.g., 30 to 800 watts), a forward converter topology is widely used. A DC/DC forward converter generally includes an isolation transformer, a switch on a primary side of the transformer, and a rectifier and output filter on a secondary side of the transformer. The switch, coupled in series with a primary winding of the transformer, converts an input DC voltage into an AC voltage. The transformer then transforms the AC voltage to another value and the rectifier generates therefrom a desired DC voltage that is filtered by the output filter at an output of the forward converter.
A practical concern regarding forward converters is that a magnetizing current of the transformer must be taken into consideration during the design of the converter. Otherwise, the magnetic energy stored in a core of the transformer by the magnetizing current may cause a failure in the converter. One approach of recovering the magnetic energy (to reduce the deleterious effects associated therewith) includes a reset topology wherein a tertiary reset winding is added to the transformer.
In a forward converter employing a typical reset topology, as the switch conducts, a transformer magnetizing current rises, storing magnetizing energy in a core of the transformer. During a complementary interval, the switch is turned off. During this period, the stored magnetizing energy is recovered and returned to the source of DC power via the tertiary reset winding and a diode (coupled thereto), thereby resetting the transformer.
One inherent problem with the reset topology is the maximum reset voltage for the transformer. At a 0.5 duty cycle for the switch, for instance, a drain-to-source voltage across the switch must be at least twice the input voltage. By operating the switch at less than the 0.5 duty cycle, the selection criteria for the switch and the turns ratio of the transformer are limited. Obviously, the aforementioned limitations detract from the use of forward converters and raise the costs associated therewith.
Accordingly, what is needed in the art is a system and method for recovering the magnetic energy stored in the transformer core and resetting the transformer while, at the same time, maximizing the design flexibility and increasing the efficiency of the power converter.

Clamp circuit for a power converter and method of operation thereof


An inflatable ball capable of being attached to an external device includes an inflatable ball and a receptacle. The receptacle includes a cavity and an opening in communication with the cavity. The cavity and opening are configured to receive a key, which may be releasingly engaged in the receptacle and secured to a strap in order to conveniently carry the ball.

Balls used for athletic activities, e.g., soccer balls, volleyballs, basketballs, footballs, etc., often need to be carried by individuals to and from the places where they are used. Such balls cannot always be conveniently carried, especially when the individual is carrying other items. For example, students traveling to school may have a backpack filled with books and other materials. Carrying a ball in addition to the backpack and other materials can be problematic. Carrying the ball within the backpack may not be possible, since the backpack may not be large enough to carry such a ball, or may already be filled with books and/or other items. Further, carrying more than one ball at a time can prove difficult if an individual does not a have a bag large enough to hold all of the balls at one time.
It is an object of the present invention to provide a ball that can be carried in a manner that reduces or wholly overcomes some or all of the difficulties inherent in prior known ways of carrying a ball. Particular objects and advantages of the invention will be apparent to those skilled in the art, that is, those who are knowledgeable or experienced in this field of technology, in view of the following disclosure of the invention and detailed description of certain preferred embodiments.


Process and system for fabricating a multidirectional fibrous reinforcement designed to be a porous preform for producing a part made of a composite material. Reinforcing thread is deposited in successive layers on a support surface. A binder is provided in association with the reinforcing thread so as to adhere the reinforcing thread to the support surface and the successive layers of thread. The reinforcing thread is pressed against the support surface in a manner that exerts a pressure substantially perpendicular to the support surface at the point where the thread is deposited. The binder may be pre-applied to the support surface or it can be applied simultaneously with the reinforcement thread.

1. Field of the Invention
The present invention concerns the technical area of fabricating preforms or multidirectional fibrous reinforcements designed for fabricating parts made of composite materials.
2. Description of Related Art
In that technical area it is known, specifically from patent application FR 2 581 379, starting with reinforcing threads, how to make a preform or multidirectional fibrous reinforcement designed to be resin-injected and become a part made of a composite material.
Patent application FR 2 581 379 proposed to make preforms for truncated conic or ellipsoid revolving parts, such as jet engine vents, by winding a reinforcing thread that has been pre-impregnated with a binding agent, on a support having teeth, designed to avoid any relative slippage of the thread on the support, so as to preserve a perfectly even distribution of the reinforcing thread on the fibrous reinforcement.
Using such a fabrication procedure, it is possible to make spoolable multidirectional fibrous reinforcements that are rotationally symmetrical. However, this fabrication process has the disadvantage of not permitting the fabrication of multidirectional fibrous reinforcements having complex or awkward forms, with no favored axis of rotational symmetry or, again, having locally concave areas, with regard to the general form of the fibrous reinforcement.
In addition, the process according to patent application FR 2 581 379 has the disadvantage of placing the reinforcing thread, while it is being laid down, in a state that could be described as a pre-constraint or pre-stressed. The pre-constraint influences the mechanical behavior of the multidirectional fibrous reinforcement and can affect the performance of the part incorporating the fibrous reinforcement.
Also, because of the tension applied to the reinforcing thread, winding it requires a deposit path that necessarily corresponds geodesically to the support surface and thus limits the types of reinforcing structures that can be made.
Thus arises the need to have a new fabrication process available that permits preforms or multidirectional fibrous reinforcements to be made that can have complex or awkward forms, specifically with locally concave areas and specifically in these areas having reinforcing threads arranged in different directions.

Process and system for fabricating a reinforcing preform


A recovery circuit for recovering the control gate and the channel well of a floating gate memory cell to a first recovery potential and a second recovery potential respectively after a program or erase process has been performed on the cell is provided. The floating gate memory cell may include the control gate coupled to a first node at a first program/erase potential, a floating gate, the channel well coupled to a second node at a second program/erase potential having a first conductivity type, and drain and source regions within the channel well having a second conductivity type different from the first. The recovery circuit includes control circuitry that provides a recovery control signal indicating when the program or erase process has been completed, and a coupling circuit that connects the control gate to the channel well in response to the recovery control signal. The recovery circuit further includes first and second voltage detectors that generate first and second grounding signals when the control gate and channel well voltages reach a first and second switching voltage respectively. The first and second grounding signals are provided to first and second voltage grounding circuits that bias the control gate and the channel well to the first and second recovery potentials respectively in response to the grounding signals. In one embodiment the first and second recovery potentials are connected to a node at ground potential, and in another embodiment the first conductivity type is p-type. In a further embodiment the floating gate memory cell is a triple well transistor, the channel well of which is within an isolation well on the substrate of an integrated circuit.

a. Field of the Invention
The present invention relates to the programming and erasing of nonvolatile memory devices. More particularly, the present invention relates to a scheme for flash cell recovery from a Fowler-Nordheim tunneling program and/or erase process.
b. Description of Related Art
Flash memory is a class of nonvolatile memory integrated circuits, based on floating gate transistors. The memory state of a floating gate cell is determined by the concentration of charge trapped in the floating gate. The operation of flash memory is largely dependent on the techniques used for injected or removing charge from the floating gate.
There are at least two basic techniques utilized for moving charge into and out of floating gate memory cells. A first technique is referred to as hot electron injection. Hot electron injection is induced by applying a positive voltage between the drain and source of the memory cell, and a positive voltage to the control gate. This induces a current in the cell, and hot electrons in the current are injected through the tunnel oxide of the floating gate cell into the floating gate. Hot electron injection is a relatively high current operation, and is therefore usually limited to use for programming a few cells at a time in the device.
A second major technique for moving charge into and out of the floating gate of flash memory cells is referred to as Fowler-Nordheim tunneling (F-N tunneling). F-N tunneling is induced by establishing a large electric field between the control gate and one of the drain, source, and channel or between the control gate and a combination of these terminals. The electric field establishes a F-N tunneling current through the tunnel oxide and can be used for both injecting electrons into the floating gate, and driving electrons out of the floating gate. The F-N tunneling process is relatively low-current, because it does not involve a current flowing between the source and drain of the cells. Thus, it is commonly used in parallel across a number of cells at a time on a device.
Operation of flash memory involves programming the array, which requires a cell-by-cell control of the amount of charge stored in the floating gate, and erasing by which an entire array or a sector of the array is cleared to a predetermined charge state in the floating gate. In one kind of flash memory, F-N tunneling is used both for programming and for erasing cells in the array.
The F-N tunneling erase used in prior approaches, has been a limiting factor on the ability to use low supply voltages (VDD less than 5 volts) with the integrated circuit chips. For example, one common approach is based on a memory cell formed in a p-type semiconductor substrate having n-type source and drain regions. A source-side F-N tunneling erase operation is biased by applying an erasing potential of about twelve volts to the source, grounding the substrate, and setting the word line connected to the control gate of the cells to be erased at zero volts. Thus, an erase operation is achieved by F-N tunneling between the source and the floating gate. However, a large voltage difference (12 volts) is established between the source and the substrate. This voltage difference induces unwanted substrate current and hot hole current. To suppress the unwanted current a so-called double diffusion source process is used. The double diffusion creates a gradual or two stage change in concentration of n-type doping between the source and the substrate. This reduces the stress at the interface between the source and the substrate, and suppresses the unwanted current. However, the double diffusion source limits the ability to shrink the size of the cell.
An alternative approach involves the use of a triple well floating gate memory such as that disclosed in International Patent Application No. PCT/US97/03861, entitled "Triple Well Floating Gate Memory and Operating Method with Isolated Channel Program, Preprogram and Erase Processes", invented by Ray-Lin Wan and Chun-Hsiung Hung, and assigned to the assignee of the present invention. In one embodiment of this approach, the flash cell is formed in a p-type substrate, in which a deep n-well (NWD) is formed within a p-well inside (PWI). N-type source and drain regions are formed within the PWI. A typical manner of F-N programming of this triple well floating gate arrangement is illustrated with respect to FIG. 1, in which it is shown that the p-substrate is connected to ground, the NWD to a small positive voltage of approximately 3 volts, the PWI, source, and drain are connected to a negative voltage of approximately -9 volts, and the gate is connected to a positive voltage of approximately 8 volts. A typical manner of F-N erasing of this triple well floating gate arrangement is illustrated with respect to FIG. 2, in which it is shown that the p-substrate is connected to ground, the NWD to a large positive voltage of approximately 10 volts, the PWI, source, and drain are connected to a positive voltage of approximately 6 volts, and the gate is connected to a negative voltage of approximately -9 volts. After performing a program or erase of the cell, the potentials applied to the nodes must be moved away and recovered to ground potential, this is known as the recovery of the cell.
In designing a scheme to program and erase a triple well floating gate cell as illustrated in FIGS. 1 and 2, one major factor to be considered is the speed at which the program/erase functions can be performed. The speed at which the cell can recover from the high voltages applied to the various cell nodes is a major determinant of the overall speed of the program/erase scheme. One factor having a very large effect on the recovery time of a particular program/erase scheme is the parasitic capacitance that is formed between the various nodes of the floating gate cell. These capacitances are illustrated in FIGS. 1 and 2 as C1 (the gate to PWI capacitor), C2 (the PWI to NWD junction capacitor), and C3 (the NWD to P-substrate junction capacitor). Thus far, three conventional schemes have been used to discharge C1, C2, C3, and recover all the terminals of the cell to ground.
The first scheme is illustrated in FIGS. 3(a)-(c) with respect to a recovery from a program step. This scheme consists of first connecting the cell's gate to ground via a highly conductive path, thereby coupling node PWI to a lower potential by capacitor C1 (-17 volts in this case) since PWI is connected to -9 V by a low conductive path. Thus, in order to reduce this coupling, this scheme is typically modified by connecting the gate to ground by a low conductive path and consequently prolonging the recovery time. Further, as shown in FIG. 3(b), a voltage limiter D3 is also typically provided in order to provide the node with protection from a high voltage stress caused by a miscalculated coupling. After the gate terminal is discharged to ground, PWI is discharged to ground via another path. At this moment, the same coupling problem appears again. As illustrated in FIG. 3(c), the gate will be coupled to a positive potential by C1 if the gate-to-ground path is not highly conductive enough to maintain the gate at ground, and NWD is thus coupled to +12 volts via C2. Therefore, this particular recovery scheme requires a negative potential limiter D3, and two separate drivers to connect the gate to ground at different time intervals. A weak gate driver is needed for the first step to ensure that PWI is not coupled too low, and a strong gate driver is needed to ensure that the gate is not coupled high when PWI is discharged to ground.
The second scheme is illustrated in FIGS. 4(a)-(c) with respect to a recovery from a program step. This scheme is just the reverse of the above scheme, it discharges PWI first, then the gate. A positive potential limiter D5 must therefore be connected to the gate terminal to avoid a strong coupling high via C1 during the first step if a strong driver is used to connect PWI to ground. Similarly, PWI must be connected to ground via a highly conductive path while the gate is discharged to ground to avoid PWI being coupled to -12 volts.
Another scheme that has been utilized is illustrated in FIGS. 5(a)-(b) with respect to a recovery from a program function. In this scheme, both PWI and the gate are discharged to ground at the same time. To implement this, the driving ability to the ground at the gate terminal must be roughly equal to the ground driving ability at PWI to balance the coupling by C1. Otherwise, the clamp circuits D3 and D5 used in the aforementioned schemes are needed to limit voltage swings at the terminals. If equal driving is adapted without the use of a clamp circuit, the precise capacitance estimation of C1, C2, and C3 is crucial to the proper operation of a circuit implementing this scheme. In addition, as C2 and C3 are junction capacitors whose capacitance varies with the potential difference between the two terminals of the capacitors, then C2 and C3 become voltage dependent variables during the recovery period. This variation greatly complicates the precise estimation of C1, C2, and C3 that is needed to implement this scheme.
FIGS. 3, 4, and 5 were discussed above with respect to recovery from a program function. Each of the above three recovery schemes could be applied to a recovery from an erase function as well--only the polarities of the voltages would change. Similarly, the problems discussed above with respect to the program function recovery apply equally with respect to an erase function recovery.
In summary, it has been found that currently utilized schemes to recover the terminals of a triple well floating gate cell after a program or erase function are somewhat limited. In particular, these schemes are limited in the speed at which they can perform the recovery function. This speed limitation is caused by the problems inherent in parasitic coupling between the various nodes of a triple well floating gate cell that has been programmed/erased. Accordingly, it is desirable to provide a scheme to recover a triple well floating gate cell from a program and/or erase function which overcomes the problems of the prior art as set forth above. Further, it is desirable to provide a circuit which will implement such a scheme, and that is capable of being implemented on an integrated circuit with a flash memory cell.

Channel FN program/erase recovery scheme


The present invention concerns a reinforcing base fabric (1) for fabrics, cloths, clothing, consisting of a weft knit fabric (2) comprising an insertion of reinforcing and stabilizing yarns (3) extending in the direction of the weft between the rows, the reinforcing and stabilizing yarns being flat and free from crimp stress.

Shirt collars including an interlining are already known.
Refer to documents FR-A-2 570 577 and FR-A-2 609 873, for example.
Conventionally, interlinings or reinforcing pieces for shirt collars are made either woven, of polyester for example, or nonwoven.
However, existing shirt collars have a disadvantage in that the dimensional stability of the collar cannot be perfectly ensured in time. Indeed, when the shirt, and therefore the collar, is washed repeatedly, the stabilisation provided by the reinforcing interlining of the collar deteriorates, leading to a modification of the neck measurement, which is particularly inconvenient. This loss of neck measurement can attain 1.5 or even 2.5 cm, if not more.
Reinforcing pieces for the localised stiffening of textiles (see FR-A-2 531 616), thermofusible interlinings (see FR-A-2 462 456) and, finally, thermofusible linings in the form of weft knit fabrics (see FR-A-2 710 078) are also known in the art.
A shirt collar including two strips of fabric with different stretching abilities on the inside is already known from document FR-A-680 742.
The problem at the root of the invention consists in ensuring the dimensional stability of a shirt collar taking into account the regular upkeep of this article of clothing, including repeated washing and ironing.


The invention features two novel antibiotics, termed 15352A and 15352B, having the structures shown in the figures.

This invention relates to antibacterial compounds.
Microorganisms, such as fungi, produce diverse secondary metabolites that are capable of modulating many different biological activities. For example, it is known that secondary metabolites isolated from the fermentation broth of Thielavia terricola inhibit phospholipase A.sub.2 and prostaglandin biosynthesis, and thus may be useful in the treatment of inflammation. The largest group of bioactive secondary metabolites are antibiotics that inhibit the growth of bacteria, fungi, and viruses by acting on essential processes such as cell wall synthesis, DNA replication, and protein synthesis.
The search for new and useful metabolites has been fueled by the need for more potent (and less toxic) antibiotics, the evolution of microorganisms that are resistant to existing antibiotics, and the emergence of new viral diseases. Corresponding factors from the agricultural sector have also contributed to the urgent search for new bioactive secondary metabolites (Franco et al., 1991, Crit. Rev. in Biotech. 11(3):193-276). Investigators who search for these compounds are likely to be rewarded: only about 5% of the estimated 1.5 million species of fungi have been described (Hawksworth, 1991, Mycol. Res. 95:441-452) and less than 10% of these have been tested for the production of useful secondary metabolites (Porter, 1993, Pestic. Sci. 39:161-168).


Disclosed is an apparatus for encoding k consecutive inputs indicating a TFCI (Transport Format Combination Indicator) of each of successively transmitted frames into a sequence of m symbols in an NB-TDD (Narrowband-Time Division Duplex) mobile communication system. An encoder encodes the k input bits into a sequence of at least 2n symbols where 2n>m, using an extended Reed-Muller code from a Kasami sequence. A puncturer performs puncturing on the sequence of 2n symbols from the encoder so as to output a sequence of m symbols.

1. Field of the Invention
The present invention relates generally to an apparatus and method for a TFCI (Transport Format Combination Indicator) code generator in a CDMA mobile communication system, and in particular, to an apparatus and method for encoding a TFCI in an NB-TDD (Narrowband-Time Division Duplex) mobile communication system.
2. Description of the Related Art
In general, a CDMA mobile communication system (or an IMT-2000 system) transmits data frames of various services such as a voice service, an image service and a data service all together, using a single physical channel. Such service frames are transmitted at either a fixed data rate or a variable data rate. As for the different services transmitted at a fixed data rate, it is not necessary to inform a receiver of a spreading rate of the respective service frames. However, regarding the services transmitted at a variable data rate, it is necessary to inform the receiver of a spreading rate of the respective service frames. In the IMT-2000 system, the data rate is in inverse proportion to the data spreading rate.
When the respective services use different frame transfer rates, a TFCI is used to indicate a combination of the currently transmitted services. The TFCI secures correct reception of the respective services.
FIG. 1 illustrates an example in which an NB-TDD communication system uses the TFCI. Herein, the NB-TDD system employs 8PSK (8-ary Phase Shift Keying) modulation for high-speed transmission, and the TFCI bits are encoded to a code of length 48 before transmission. As shown in FIG. 1, one frame is divided into two sub-frames of a sub-frame#1 and a sub-frame#2. Each sub-frame is comprised of 7 time slots TS#0-TS#6. Among the 7 time slots, the odd-numbered time slots TS#0, TS#2, TS#4 and TS#6 are used for an uplink transmitted from a mobile station to a base station, while the even-numbered time slots TS#1, TS#3 and TS#5 are used for a downlink transmitted from a base station to a mobile station. Each time slot has a structure in which data symbols, a first part of TFCI, a midamble signal, SS symbols, TPC symbols, a second part of TFCI, data symbols and GP are sequentially time-multiplexed.
FIG. 2 illustrates a structure of a transmitter for transmitting a frame in a conventional NB-TDD communication system. Referring to FIG. 2, a TFCI encoder 200 encodes an input TFCI and outputs a TFCI symbols. A first multiplexer (MUX) 210 multiplexes the TFCI symbols output from the TFCI encoder 200 and other signals. Here, the "other signals" refer to the data symbol, the SS symbol and the TCP symbol included in each slot of FIG. 1. That is, the first multiplexer 210 multiplexes the TFCI symbol and the other signals except for the midamble signal of FIG. 1. A channel spreader 220 channel-spreads the output of the first multiplexer 210 by multiplying it by a given orthogonal code. A scrambler 230 scrambles the output of the channel spreader 220 by multiplying it by a scrambling code. A second multiplexer 240 multiplexes the output of the scrambler 230 and the midamble signal as shown in FIG. 1. Here, the first multiplexer 210 and the second multiplexer 240 generate the frame structure of FIG. 1, under the control of a controller (not shown).
FIG. 3 illustrates a structure of a receiver in the conventional NB-TDD communication system. Referring to FIG. 3, a first demultiplexer 340 demultiplexes an input frame signal under the control of a controller (not shown), and outputs a midamble signal and other signals. Here, the "other signals" include the TFCI symbol, the data symbol, the SS symbol and the TCP symbol. A descrambler 330 descrambles the other signals output from the demultiplexer 340 by multiplying them by a scrambling code. A channel despreader 320 channel-despreads the output of the descrambler 330 by multiplying it by an orthogonal code. A second demultiplexer 310 demultiplexes the signals output from the channel despreader 320 into the TFCI symbol and other signals, under the control of the controller. Here, the "other signals" include the data symbol, the SS symbol, and the TCP symbol. A TFCI decoder 300 decodes the TFCI symbol output from the second demultiplexer 310 and outputs TFCI bits.
The TFCI is comprised of 1 to 2 bits to indicate 1 to 4 combinations of the services, comprised of 3 to 5 bits to indicate 8 to 32 combinations of the services, or comprised of 6 to 10 bits to indicate 64 to 1024 combinations of the services. Since the TFCI is information indispensable when the receiver analyzes the respective service frames, a transmission error of the TFCI may prevent the receiver from correctly analyzing the respective service frames. Therefore, the TFCI is encoded using an error correcting code so that even though a transmission error occurs on the TFCI, the receiver can correct the error.
FIG. 4 illustrates a scheme for encoding the TFCI using an error correcting code according to the prior art. Referring to FIG. 4, an extended Reed-Muller encoder 400 encodes an input 10-bit TFCI and outputs a 32-symbol TFCI codeword. A repeater 410 outputs intact even-numbered symbols of the TFCI codeword output from the extended Reed-Muller encoder 400 and repeats odd-numbered symbols, thereby outputting a total of 48 coded symbols. In FIG. 4, a less-than-10-bit TFCI is constructed to have a 10-bit format by padding a value of 0 from the MSB (Most Significant Bit), i.e., from the leftmost bit. The (32, 10) extended Reed-Muller encoder 400 is disclosed in detail in Korean patent application No. 1999-27932, the contents of which are hereby incorporated by reference.
In the (32, 10) extended Reed-Muller encoder 400, a minimum distance between codes is 12. After repetition, an input code is converted to a (48, 10) code having a minimum distance of 16. In general, an error correction capability of binary linear codes is determined depending on the minimum distance between the binary linear codes. The minimum distance (dmin) between the binary linear codes to become optimal codes is disclosed in a paper entitled "An Updated Table of Minimum-Distance Bounds for Binary Linear Codes" (A. E. Brouwer and Tom Verhoeff, IEEE Transactions on information Theory, VOL 39, NO. 2, MARCH 1993).
The paper discloses that the minimum distance required for the binary linear codes used to obtain a 48-bit output from a 10-bit input is 19 to 20. However, since the encoder 400 has a minimum distance of 16, the error correction encoding scheme of FIG. 4 does not have optimal codes, causing an increase in TFCI error probability in the same channel environment. Because of the TFCI error, the receiver may misjudge a rate of the data frame and decode the data frame at the misjudged rate, thereby increasing a frame error rate (FER). Therefore, it is important to minimize a frame error rate of the error correction encoder for encoding the TFCI.

Apparatus and method for encoding and decoding TFCI in a mobile communication system


This invention provides a circuit and a method for regulating the voltage of semiconductor integrated circuits. It provides the ability to accurately regulate voltage on chips by eliminating the sensitivity due to temperature, process and noise by eliminating the problems introduced by body effect. The invention utilizes a charge pump, a PN diode, diode connected NMOS field effect transistors, one or more intrinsic NMOS field effect transistors, a current mirror discharge NMOS field effect transistor, a current source and, a diode connected NMOS field effect transistor current mirror.

1. Field of the Invention
This invention relates to a circuit and a method for regulating voltage with low sensitivity to body effect in semiconductors.
More particularly this invention relates to the use of intrinsic transistors to fine-tune the regulation voltage.
2. Description of Related Art
Many applications implemented on today""s semiconductor chips require accurate voltages. A classic example is writeable memory which requires that the amplitude of the erase voltage to exactly balance the write voltage of the writeable memory cells. If the erase voltage does not accurately match the write voltage, the memory cell will continue to store a xe2x80x981xe2x80x99 value instead of the intended xe2x80x980xe2x80x99 value. To insure that the write voltage and erase voltage are generated properly, an on-chip voltage regulation circuit is required. There are several on-chip and environmental effects which counteract the regulation of on-chip voltages. These include temperature effects, process variations and noise interference. Temperature effects the resistance, capacitance and current flow on chip. In addition, process variations affect the line spacings and oxide, metal and semiconductor thicknesses affect the on-chip voltages. There is one semiconductor chip design item which affects the threshold voltages and other voltages on chip. The body effect is a threshold voltage shift that occurs when there is a back bias Between the source and the body or the bulk of a transistor. In this case, the source of the field effect transistor is not coupled to ground, but the bulk is connected to ground. The above case represents the back-bias effect. This back-bias effect adds to the threshold voltage shift caused by the temperature and process variation. The problem of back-bias body effect is solved in this invention.
U.S. Pat. No. 5,955,874 (Zhou et al) xe2x80x9cSupply Voltage-independent Reference Voltage Circuitxe2x80x9d describes a voltage reference circuit comprising intrinsic MOS transistors. The circuit is independent of voltage supply and insensitive to process and temperature variations.
U.S. Pat. No. 5,783,934 (Tran) xe2x80x9cCMOS Voltage Regulator with Diode-Connected Transistor Divider Circuitxe2x80x9d describes a CMOS voltage regulator. This voltage regulator is configured in a negative feedback operational amplifier loop with diode connected p-MOS FETs serving as a resistor divider.
U.S. Pat. No. 5,097,303 (Taguchi) xe2x80x9cOn-Chip Voltage Regulator and Semiconductor Memory Device Using the Samexe2x80x9d discloses a voltage regulator comprising diode-connected MOS transistors. The internal chip voltage created is little affected by variations in the load current and consumes a small amount of current in stand by mode.
U.S. Pat. No. 5,029,282 (Ito) xe2x80x9cVoltage Regulator Circuitxe2x80x9d discloses a regulator made up of diode connected MOS FETs. This regulator circuit is ideal for an integrated circuit with a charge pump circuit having a voltage output terminal.
It is the objective of this invention to provide a circuit and a method for for regulating the voltage for semiconductor integrated circuits.
It is further an object of this invention to accurately regulate voltage on chips by eliminating the sensitivity due to temperature, process and noise by eliminating the problems introduced by body effect.
The objects of this invention are achieved by a circuit that provides voltage regulation using a charge pump, a PN diode, diode connected NMOS field effect transistors, an intrinsic NMOS field effect transistor, a current mirror discharge NMOS field effect transistor, a current source and, a diode connected NMOS field effect transistor current mirror.
The problem of back-bias body effect is solved in this invention by using one or more intrinsic MOS field effect transistors. Intrinsic MOS FETs have low threshold voltage, Vt. In fact, more than one intrinsic transistor can be applied into the diode chain in order to generate the proper regulation voltage level. Therefore, this voltage regulator output stage generates a regulated voltage equal to the sum of the breakdown voltage Vbd of said PN diode, the threshold voltages, Vtn, of said N diode connected NMOS field effect transistors including the intrinsic MOS transistors which are also diode-connected, and the drain-to-source voltage, Vds of said current mirror discharge NMOS field effect transistor.
Vpp=Vbd+Vt1+Vt2+ . . . +Vtn+Vds
In summary, if we use intrinsic MOS with low sensitivity to body effect as the components of the voltage regulator, the regulation voltage will also have low sensitivity to body effect. This reduces the back bias effect to the regulator. Also, this circuit of this invention uses the grounding of the sources of the current mirror MOS transistors. This also reduces the back-bias effect.

Voltage regulator with low sensitivity to body effect

Taiwan Semiconductor Manufacturing Company


A power boost assembly is disclosed that can be used with a door actuator, such as a door closer. The power boost assembly is structured to store an energy during a first movement of a door and release the stored energy during a second movement of the door. In one form the power boost assembly can be structured as a module that can be added to an existing door and door closer installation. In one form the power boost assembly is used to increase a closing force imparted to a door to ensure a latching event.

Door closers are often attached to doors to assure that the door is closed after use. The American with Disabilities Act ("ADA") includes guidelines that relate to the manual operating force required to activate door hardware and manually open public doors. Specifically, the ADA requires that a manual operating force of 5 lbs or less is required to open interior and exterior doors.
Current mechanical closer design allows for closers to be set to require manual opening forces measuring between 3.75-4.75 lbs, depending on the application, door weight, and external environment. In some cases, this setting does not provide enough force to assure that the door latches in the closed position.
Some existing systems have various shortcomings relative to certain applications. Accordingly, there remains a need for further contributions in this area of technology.


An apparatus and method are disclosed for accurately determining viscosity of Newtonian and non-Newtonian fluids using a controlled needle viscometer. The controlled needle viscometer includes a vertical sample insert tube filled with the liquid of which the viscosity is to be determined. Using a needle guide at the top of the sample insert tube, a body having a known density is made to fall through the liquid in the sample insert tube. Using the time that the controlled needle takes to fall between two known distance marks or transducers, the velocity of the needle falling through the liquid is determined. Thus, the viscosity can be calculated by using the velocity of a controlled needle. In the method, viscosity, shear rate and shear stress can be calculated according to a modified power law model.

This invention relates to an apparatus and method for accurately determining the viscosity of Newtonian and non-Newtonian fluids by means of a controlled needle viscometer. The controlled needle viscometer includes a vertical sample insert tube filled with the liquid of which the viscosity is to be determined. Viscosity of the sample can be determined by measuring the time of fall of a controlled needle through a predetermined distance of the fluid held in a sample insert tube.
A fluid can generally be classified as ideal, Newtonian or non-Newtonian based on its behavior under stress. An ideal fluid has no shear stress in a flow field and its viscosity is zero. No fluids which exhibit this type of behavior in fact exist. In a Newtonian fluid, such as water and glycerol, the shear stress is directly proportional to the shear rate, and its viscosity is independent of the shear rate. In a non-Newtonian fluid, the shear stress is dependent on the shear rate, and its viscosity may vary with the shear rate in a complex manner.
Viscosity is a function of internal friction and of the behavior of a fluid under stress. Therefore, in order to improve the design of pumps, stirrers, mixers, liquid transport devices, and reactors, it is important to be able to accurately determine viscosity. Furthermore, because the molecular weight of a polymer solution is related to its viscosity at zero shear rate, an accurate determination of the zero shear rate viscosity of a polymer solution enables one to obtain an accurate measurement of its molecular weight.
Many methods have been developed to determine the viscosity of fluids. The earliest is the capillary type viscometer, in which a fluid flow is provided through a capillary tube and the drop in pressure across a length of the tube is used to determine the viscosity. This technique suffers from many disadvantages, such as the need for measuring small pressure differences accurately, calibrating the diameter of the capillary tube and keeping the capillary tube clean. Furthermore, it has been found that the capillary tube viscometer is only useful for determining viscosity at high shear rates. It cannot be used to determine viscosity at low shear rates.
Another known technique is falling sphere or falling ball viscometry, first described in G. G. Stokes, Camb. Phil. Trans., 9, p. 8 (1851). In this method the viscosity is determined from the time taken for a sphere to fall through a predetermined distance in an infinite fluid. However, in the falling sphere method, the following assumptions are made: (a) the spheres are falling in an infinite medium, and (b) the density of the falling sphere is in a suitable range for the equation used to determine the viscosity to hold true. Furthermore, the falling sphere must be perfectly round, so that it will fall vertically through the fluid and will not veer in one direction or another or fall erratically.
In practice, spheres can only be made from a limited range of materials, such as, glass, aluminum or steel and their density cannot be adjusted. Further, very few spheres are truly round and, as a consequence, the fall through the fluid medium is often not vertical. Moreover, a fluid must be held in a container. Therefore, the fluid is not, in fact, infinite, and wall effects have to be considered. Thus, inaccuracies arise from the non-vertical fall of a sphere and a correction factor for wall effects must be applied. The falling sphere method does not provide an exact analytical solution for non-Newtonian fluids because of the geometric complexities involved.
Falling cylinder and plunger viscometers have also been designed. See, Lohrentz, et al., A. I. Ch. E. Journal, 6, No. 4, p. 547-549 (1960) and G. S. Smith, J. Inst. Pet., 43, p. 227-230 (1957). Some deficiencies of these viscometers are difficulties in constructing the falling cylinder or plunger; difficulties in obtaining cylinders or plungers with different densities; and difficulties in maintaining a vertical fall through the fluid. To maintain a vertical fall through the fluid, guide pins or bushings are required. Further, the eccentricity effect is very significant. Because of these problems, it is difficult to account for the systematic error in viscosity measurement by the falling cylinder or plunger method.
A rotating cylinder viscometer with two coaxial cylinders, a rotating outside cylinder with a stationary inside cylinder, has been developed to measure the viscosity of non-Newtonian fluids. See Van Wazer et al., Viscosity and Flow Measurement, p. 47-96, Interscience Publishers, New York, 1963. However, the rotating cylinder viscometer is difficult and expensive to make because small torque measurements on the stationary spindle are needed for compensation purposes. Further, it is very difficult to maintain a constant temperature in the system and evaporation of the fluid from the open mouth container is unavoidable. These difficulties are often translated into unacceptably large errors in the viscosity measurement obtained.
Recently, a relatively simple and easily used apparatus and method for the accurate determination of the viscosity of Newtonian and non-Newtonian fluids was developed. That apparatus is the subject of U.S. Pat. No. 4,637,250, issued Jan. 20, 1987, entitled Apparatus and Method For Viscosity Measurements For Newtonian and Non-Newtonian Fluids, to Irvine and Park (the present inventor). The disclosure of that patent is incorporated herein by reference as if set forth in full. The patented apparatus includes a cylinder for holding the fluid for which the viscosity is to be determined; a needle; a needle launcher placed at the top of the cylinder for feeding the needle into the fluid in the cylinder; means at the bottom of the cylinder for collecting the needle; means for maintaining the cylinder, the sample insert tube, and its contents at a constant temperature; and means for measuring the time of fall of the needle between two marks on the wall of the cylinder spaced a predetermined distance. The needle is capable of being adjusted in density, and viscosity is measured by allowing the needle to fall through the liquid in the sample insert tube while maintaining the sample insert tube and its contents at a constant temperature. The time of fall of the needle between the spaced marks on the cylinder (or between transducers) is measured. From this measurement and the dimensions of the apparatus, the viscosity can be calculated.
It is an object of this invention to provide an inexpensive and easily used apparatus and method to determine accurately the viscosity of Newtonian and non-Newtonian fluids over a wide range of viscosities.

Apparatus and method for viscosity measurements using a controlled needle viscometer


The present invention relates generally to amplifiers, and more specifically to multi-band and/or multi-standard low noise amplifiers. There are currently no inexpensive, highperformance, fully-integrable, multi-standard low noise amplifiers (LNAs) available. The invention provides a suitable LNA for a multi-band and/or multi-standard receiver in wireless and other applications. This LNA comprises a positive signal amplifier having a first input for receiving a positive RF signal, and a first output for providing an amplified positive RF signal; a negative signal amplifier having a second input for receiving a negative RF signal, and a second output for providing an amplified negative RF signal; and a tunable differential filter having a tuning control input, a third input for said first output and a fourth input for said second output; the frequency response of said tunable differential filter varying with a control signal input to said tuning control input, whereby signal of undesired frequencies may be filtered from said first output and said second output.

There are many different wireless communication systems used world-wide today, including cellular telephone systems, satellite communications, cordless telephones, short range citizen's band (CB) radio and high frequency (HF) radio systems. The communication bands and standards for many of these systems vary between applications and from for one jurisdiction to the next.
One area of particular interest in wireless communications is that of cellular telephone systems. The cellular telephone industry has been experiencing massive growth in both industrial and non-industrial countries alike. But still, a cellular telephone system in one jurisdiction may have been designed around completely different transmission frequencies and operating modes, than a cellular telephone system in another jurisdiction. Portable cellular telephones are therefore often unable to move from one jurisdiction to another.
It would be desirable to have a cellular telephone which could operate in any jurisdiction, thus being portable world-wide. However, the standards for cellular telephone technology vary a great deal. Some of the major standards are:                1. the advanced mobile phone service ("AMPS") used in North America. This is an analog cellular system which uses a transmission frequency band between 824 MHz and 849 MHz. This band is often referred to as AMPS 800;        2. the digital mobile phone service ("DMPS"), which is used for digital communications. This system also operates at transmission frequency band between 824 MHz and 849 MHz and is referred to as DMPS 800;        3. the global system for mobile communications ("GSM"), used in Europe and Japan, which specifies a transmission frequency band between 890 MHz to 915 MHz. This digital system is often referred to as GSM 900;        4. the personal communications system ("PCS") 1900, used in North America, which specifies a transmission frequency between 1850 MHz and 1910 MHz;        5. the Nordic mobile telephone 450 system ("NMT-450") which specifies a transmission frequency between 463 MHz and 468 MHz, and uses FDMA (frequency division multiple access) signal modulation; and        6. the Nordic mobile telephone 900 system ("NMY-900") which specifies an FDMA transmission frequency between 935 MHz and 960 MHz.Other communication standards are also used, and others are certain to appear over time.
The same situation arises with respect to other communication media, such as cordless telephones. In the cordless telephone world, for example, three common standards are:                1. the cordless telephone 2 ("CT2") standard which specifies a transmission frequency between 864 MHz and 868 MHz;        2. the digital European cordless telephone ("DECT") standard which specifies a transmission frequency between 1880 MHz and 1990 MHz; and        3. the newer North American cordless telephones which use the industrial, scientific, medical (ISM) band, transmitting signals at a frequency band of 2475 MHz to 2483.5 MHz.
Demand for cellular telephones and other wireless communications services is continually increasing, as is the pressure to reduce costs and increase marketable advantages such as portability and flexibility. As a result, many wireless systems are now configured to operate in more than one frequency band. However, the current technology results in multi-band and multi-standard wireless handsets and other portable devices which are expensive and bulky, and consume a great deal of power. For cellular telephones and similar consumer items, clearly, it is desirable to that these devices be fully integrated onto inexpensive, low power integrated circuits (ICs).
One of the problems is in the provision of the front end radio-frequency (RF) circuitry, and in particular, in the provision of a "low noise amplifier" (LNA). At the front end of the typical wireless device, signals received from the antenna are first fed to an LNA which amplifies the incoming signal to a level that can be handled by the rest of the receiver circuitry without introducing too much noise or distortion. Such an amplifier must have both a low noise figure and a high gain to reduce the effects of noise in subsequent amplifying and processing stages. Unfortunately, conventional LNAs or wide-band LNAs are unable to provide acceptable noise and gain performance in multiple wireless bands without unduly increasing the amplifier cost and complexity.
Most prior multi-band or multi-standard wireless receivers used separate LNAs for each of the frequency bands, or a single, multi-stage amplifier which is both complex and expensive. In either case, the size, cost and power consumption of the handset is unduly increased.
For example, a typical front-end for a multi-band, multi-standard RF receiver is presented in the block diagram of FIG. 1. Each of the input RF signals RF1, RF2, . . . RFn, is fed to a corresponding low noise amplifier LNA1, LNA2, . . . LNAn which is optimized for the particular frequency, amplitude and other characteristics of the input signal RF1, RF2, . . . RFn. Each amplified signal is then fed to a direct conversion element DC1, DC2, . . . DCn, or some other manner of signal demodulator, which converts the amplified signal to a lower frequency for processing or filtering. Typically, the RF signals are demodulated to an "intermediate frequency" (IF), or to baseband (the frequency of the original signal. In the case of voice communications, for example, the baseband would be audio frequency).
Clearly, this is an inefficient way of providing a multi-band or multi-standard receiver. The large number of components makes for a physically large, expensive, high power consuming, and unreliable device.
The continuing desire to implement low-cost, power efficient receivers has proven especially challenging as the frequencies of interest in the wireless telecommunications industry (especially low-power cellular/micro-cellular voice/data personal communications systems) have risen above those used previously (approximately 900 MHz) into the spectrum above 1 GHz. Attempts to provide flexible designs in Radio Frequency Integrated Circuits (RFICs)—also known as monolithic microwave integrated circuits (MMICs)—allowing for multiple standards and varying conditions of reception have met with limited success. These designs usually provide this functionality by means of multiple, independent signal paths—one signal path and set of components for each frequency standard and/or set of operating conditions. This is an expensive and physically bulky approach which suffers from all of the performance problems described above.
Thus, there is a need for a simple and inexpensive low-noise amplifier which can operate in at least two distinct frequency bands, addressing the problems above. It is desirable that this design be fully-integratable, inexpensive, physically small, power-efficient, reliable, and high performance. As well, it is desirable that this design be easily applied to multi-standard/multi-frequency wireless applications.


The invention is directed towards a battery condition indicator. The battery condition indicator includes at least one indicator electrode, a counter electrode for the at least one indicator electrode, and a separator that is combined with an electrolyte. The at least one indicator electrode is in electrical connection with a first terminal of a battery. The at least one indicator electrode includes at least one redox material. The counter electrode is a second terminal of the battery. The separator that is combined with electrolyte is positioned between the at least one indicator electrode and the counter electrode.

Electrochemical cells, or batteries, are commonly used as electrical energy sources. A battery contains a negative electrode, typically called the anode, and a positive electrode, typically called the cathode. The anode contains an active material that can be oxidized. The cathode contains an active material that can be reduced. The anode active material is capable of reducing the cathode active material. A separator is disposed between the anode and the cathode. These components are contained within a can, or housing, that is typically made from metal.
When a battery is used as an electrical energy source in a device, electrical contact is made to the anode and the cathode, allowing electrons to flow through the device and permitting the respective oxidation and reduction reactions to occur to provide electrical power. An electrolyte in contact with the anode and the cathode contains ions that flow through the separator between the anode and cathode to maintain charge balance throughout the battery during discharge.
Batteries that include an indicator for visually displaying the condition, such as the state of charge, of the battery are known. Known indicators include, for example, electrochromic materials in electrical contact with the battery and thermochromic materials in thermal contact with a resistive element that is adapted to be connected across the battery. Electrochromic materials are materials that change color or transparency when subjected to electrical charge. Thermochromic materials are materials that change color or transparency when subjected to temperature change.
The known indicators typically require a consumer to physically interact with the indicator in order for the battery-related information to be displayed. A thermochromic indicator, for example, may include a resistor that is connected in series with the battery to form a circuit during voltage measurement. A switch must be present within the circuit to break electrical connection from the indicator to the battery when the indicator is not in use. The battery will prematurely discharge if the thermochromic indicator is in permanent electrical contact with the battery since a leakage current will be flow from the battery through the thermochromic indicator. Known electrochromic indicators will also suffer from issues associated with battery leakage current, similar to that of thermochromic indicators, without the presence of a switch within the indicator circuit. In addition, consumers with, or without, dexterity issues may find it difficult to operate the switch within the indicator. The switch generally includes at least one, and more often two, press-points that must be engaged to close the circuit. The press-points are typically very small; may be hard to see; and may be difficult to press. The known indicators are also sensitive to the amount of force with which the press-point(s) are closed. The condition of the battery that is displayed, if a condition is displayed at all, may be affected by the sensitivity and thus the accuracy of the indicator may be adversely affected.
Known indicators may also be permanently connected to the battery so that consumer interaction is not needed to activate the battery condition indicator. The known indicators of this type, however, typically include a distinct indicator electrode and a distinct counter electrode within the construction of the indicator. The inclusion of two electrodes within the indicator occupies space and increases the complexity of manufacturing the indicator. In addition, the additional components increases the overall cost of manufacturing the indicator.
The present invention overcomes the problems associated with the known indicators by employing a battery tester comprising an electrochemically generated display that is in permanent electrical connection with the battery. Consumer interaction to display the condition or state of charge of the battery is not needed. The accuracy of the indicator is not adversely affected by the operation of a switch since no consumer interaction is needed to activate the indicator. The affects of parasitic discharge are minimized within the battery condition indicator of the present invention and the useful capacity of the battery is minimally reduced over an extended period of storage. The indicator of the present invention is also simplistic in design and is less costly with respect to known indicators to manufacture.


A valve (201) is provided that comprises a housing (202) including a fluid inlet (332) and a fluid outlet (204). The valve (201) also includes one or more vibrating elements (409) configured to vibrate when energized. The valve (201) further comprises an amplifying plate (410) including a fluid passage (412) and one or more pressure-balancing apertures (413) in fluid communication with the fluid inlet (332), contacting the one or more vibrating elements (409). A sealing ball (407) is positioned between the fluid inlet (332) and the fluid passage (412).

Fluid handling devices are becoming increasingly popular and there is an increased demand for fluid handling devices that are both portable and easy to use. Portable fluid handling devices are being used for applications such as home care, point of care testing, fuel cells, fragrance dispensers, etc. In order for a portable fluid handling device to be effective and efficient, it should be light weight, small in size, consume minimal power, and be cost effective to manufacture. In many applications, it is also important that the fluid handling device provide an accurate and consistent fluid distribution. Therefore, it is necessary to incorporate an efficient fluid valve in the fluid handling device. In many aspects, the fluid valve characterizes the device's efficiency.
One solution of a portable valve that attempts to meet the above criteria is a miniature solenoid valve. The miniature solenoid valve however, is not as effective as originally anticipated. Solenoid valves are limited in both size as well as power consumption. In order to obtain adequate performance, a solenoid valve typically consumes a substantial amount of power. The power consumption of a solenoid valve, in some circumstances, is unacceptable when using batteries as a power source.
Another solution has been the use of electrically actuated piezo valves. Some piezo valves operate using a closing arm that seals against a sealing shoulder when the piezo element is de-activated. These valves typically require a substantial amount of space to operate and may not always provide an adequate solution as they are subject to clogging when used with liquids that may dry around the orifice. However, it is also known in the art to provide a sealing ball, which seals against a sealing shoulder.
For example, international patent application publication WO/2009/106233, which is assigned on its face to the present applicant and incorporated herein by reference, discloses an electrically actuated valve with a sealing ball. The valve includes a vibrating element and an amplifying plate in contact with the vibrating element.
FIG. 1 shows a simplified cross-sectional view of a prior art valve 10 similar to the valve shown in FIG. 3 of the '233 application. The prior art valve 10 includes a housing 11, which is separated into a first portion 11a and a second portion 11b. The first portion 11a includes a fluid inlet 12 while the second portion 11b includes a fluid outlet 13. As can be appreciated, the fluid inlet 12 can be adapted to receive a pressurized fluid from a pressurized fluid supply (not shown). Further, the fluid outlet 13 can be provided to deliver fluid to a desired component (not shown). The valve 10 is therefore, designed to control the flow of the pressurized fluid from the fluid inlet 12 to the fluid outlet 13.
The prior art valve 10 is also shown with electrical contacts 14. The electrical contacts 14 are in contact with electrodes 15 to supply power to a vibrating element 16. The vibrating element 16 may comprise a piezoelectric material as explained in the '233 application. The vibrating element 16 is capable of vibrating when energized, i.e., when exposed to an electrical field or an electric potential. Piezoelectric materials are known in the art and are often used for their physical characteristics when energized by an alternating field. If an alternating electric field is applied to the piezoelectric element, the element 16 changes dimensions at a frequency of the electric field. Therefore, the vibrating element 16 converts electrical energy into mechanical energy. The valve 10 further includes an amplifying plate 17. The amplifying plate 17 can transfer and amplify vibrations produced by the vibrating element 16 to a sealing ball 18. The amplifying plate 17 also defines a fluid passage 19 through which fluid can flow. The fluid acting on the amplifying plate 17 is prevented from reaching the vibrating element 16 by two sealing members 20a, 20b.
The sealing ball 18 is sized and shaped to form a substantially fluid-tight seal with the fluid passage 19 to prevent fluid flow. As explained in the '233 application, the pressure of the fluid in the fluid chamber 21 provides the biasing force against the sealing ball 18. In order to allow fluid to flow through the valve 10, the vibrating element 16 is energized and caused to vibrate. The vibrations are transferred and possibly amplified by the amplifying plate 17. The vibrations of the amplifying plate 17 overcome the fluid pressure that forces the sealing ball 18 to seal against the fluid passage 19, thereby allowing fluid to flow between the inlet 12 and outlet 13.
While the prior art valve 10 provides suitable control for relatively low flow operations, as can be appreciated, the pressure of the fluid acts on a single side of the amplifying plate 17. More specifically, the pressure of the fluid acts on the inlet side of the amplifying plate 17 exposed to the inlet pressure chamber 21 across a diameter, D of the plate 17. The diameter D extends substantially entirely across the inlet pressure chamber 21. Consequently, the pressure of the fluid tends to dampen the vibrations of the amplifying plate 17. While the fluid damping may not be significant for some fluid pressures, as the fluid pressure increases, the power required to vibrate the amplifying plate 17 with predetermined amplitude also increases. As a result, high pressure applications may require an excessive amount of power.
The embodiments described below overcome this and other problems and an advance in the art is achieved. The embodiments provide an amplifying plate with one or more pressure balancing apertures. The apertures permit fluid at the inlet to act on both sides of at least a portion of the amplifying plate. The apertures can advantageously reduce the cross-sectional area of the amplifying plate that is exposed to pressurized fluid on a single side. With fluid acting on both sides of the amplifying plate, fluid dampening of the amplifying plate is substantially reduced.

Electrically actuated valve with a sealing ball


A packing box made from a patterned cardboard having a bottom panel, a top panel, two side panels, a front panel, and a rear panel, wherein a rectangular bottom frame is extended from one long side of the bottom panel remote from the front panel, having two adhesion flaps respectively extended from one long side and one short side thereof and adhered to the bottom panel at an outer side, defining with the bottom panel a bottom window and an insertion hole at one side for the insertion of a card into the bottom window; a rectangular top frame is extended from one long side of one side panel remote from the bottom panel, having two adhesion flaps respectively extended from one long side and one short side thereof and adhered to the top panel at an outer side, defining with the top panel a top window and an insertion hole at one side for the insertion of a card into the top window.

The present invention relates to packing boxes, and relates ore particularly to such a packing box which has two integral frames at two opposite sides for the loading of advertising cards.
Regular paper packing boxes for packing cigarettes, food, etc., are commonly made by cutting a cardboard into the desired pattern, then folding up the patterned cardboard into shape and fixing it by an adhesive. These packing boxes may be printed with advertising words, directions for use, cautionary statement, precautionary statement, etc. However, a packing box has only a limited printing surface area. Furthermore, when printed, the content of the printing can no longer be changed.


A stent includes annular units arranged in the axial direction of the stent, wherein each of the annular units includes a plurality of annular elements so arranged as to surround the stent axis, the adjacent annular elements being joined to each other through a joint, and the adjacent annular units are interconnected at their joints by at least one link. The annular elements in each annular unit are so arranged that one of the adjacent pair of annular elements is located on the proximal end side in the axial direction of the stent relative to the other of the adjacent pair of annular elements, end portions of each annular unit are projected zigzag, and the zigzag projected end portion of one annular unit is in the state of penetrating into the adjacent annular unit. The joints in each annular unit are substantially parallel to the stent axis.

The present invention relates to an indwelling stent for use in improving constriction occurred in a living organism such as blood vessel, bile duct, trachea, esophagus, urethra, other organs, etc.
A stent is a generally tubular tool having the function of maintaining a blood vessel or other incised lumen part in an opened state, and is used for improving stenosis of a blood vessel or the like.
Stents are classified, by the function and indwelling method thereof, into self-expandable stents and balloon expandable stents. The balloon expandable stent does not have a self-expanding function, and is used in such a manner that the stent is inserted into a target site, then a balloon is located inside the stent, and the balloon is inflated to expand (plastically deform) the stent by the inflation force of the balloon, thereby bringing the stent into close contact with the inside surface of the target site and fixing the stent there. In this type of stent, the operation of expanding the stent is needed.
A balloon expandable stent has been proposed, for example, in Japanese Patent Laid-open No. 2002-172176 by the present applicant.
The stent disclosed in FIGS. 4, 5 and 6 in the publication is formed in a roughly tubular shape, has a diameter allowing for insertion into a lumen in a living organism, and is expandable when radially outward forces are exerted thereon from the inside of the tubular shape.
The stent comprises a plurality of annular units arranged in the axial direction of the stent, wherein the annular units each comprise a plurality of roughly polygonal filamentous members each of which has a multiplicity of filamentous bent portions and an opening so as to be expandable under radially outward forces and which are joined to each other through a plurality of joints so as to be annular in overall shape. Further, the stent comprises links by which the adjacent annular units are linked to each other through the joints thereof and which are so disposed as not to be continuous with the adjacent links, and a plurality of links are provided between the adjacent annular units at opposed positions or at substantially regular angular intervals around the stent axis.
As shown in FIGS. 4 and 5 and FIG. 6, which is a development of FIG. 4, of the publication, the stent comprises a plurality of the annular units arranged in the axial direction of the stent 10, each of the annular units comprising a plurality of the roughly polygonal filamentous members each of which is elongate in the axial direction of the stent and has filamentous bent portions and a central opening and which are arranged substantially on the circumference of a circle at substantially regular angular intervals around the stent axis, adjacent portions (side portions) in the circumferential direction of the roughly polygonal filamentous members being joined to each other through the joints. Further, the joints of one annular unit and the joints of the adjacent annular unit are linked by the links at two or more locations. From another point of view, the stent 10 is a tubular body composed by linking a multiplicity of the annular units through the links.
A balloon expandable stent has been proposed, for example, in U.S. Pat. No. 5,879,381 by the present applicant.
The stent disclosed in FIGS. 1 to 3 of the publication is a so-called balloon expandale stent which is formed in a roughly tubular shape, has a diameter allowing for insertion into a living organism, and is expandable when radially outward forces are exerted thereon from the inside of the tubular shape. As shown in FIGS. 1 to 3 of the publication, the stent includes annular units arranged in the axial direction of the stent, wherein each annular unit has four roughly elliptic or polygonal annular elements each of which is elongate in the axial direction of the stent and has a central opening and which are arranged substantially on the circumference of a circle at roughly regular angular intervals around the stent axis, adjacent portions (side portions) in the circumferential direction of the annular elements being joined to each other by joints. Further, the adjacent annular units are interconnected at their joints by at least one link.
In general, the balloon expandable stent is produced with a predetermined outside diameter by use of a pipe of a plastically deformable material, a balloon is disposed inside the stent, and the diameter of the stent is reduced by compressing from outside so as to mount the stent onto the balloon. The stents shown in the above-mentioned patent references have the merit that shape retention after expansion is good and the overall length is little changed upon expansion, and have a sufficient effect for dilation of a living organ.
Recently, however, there is a demand for a stent capable of indwelling in a smaller-diameter living organ, particularly, a smaller-diameter blood vessel or bile duct. In the stents disclosed in the above-mentioned patent references, the adjacent roughly polygonal filamentous members or the adjacent roughly elliptic or polygonal annular elements extend in directions orthogonal to the stent axis. Therefore, even though the polygonal filamentous members (polygonal annular elements) can be compressed, it is difficult for the joints to be compressed, so that reduction in diameter by compression is limited, and it is impossible to compress the stent to a sufficiently small diameter.

Indwelling stent and living organ dilator


A method of removably anchoring well tubing in a well bore may include selecting a well having a bore diameter and an anchor positioned therein. The anchor may have a housing defining an anchor diameter and extension members extending therefrom toward the bore diameter. The bore diameter and anchor diameter may be spaced apart a distance defining an annulus therebetween and extending along the well. A tool sized to cut substantially exclusively within the annulus may be selected. The tool may be positioned within the annulus, rotated, and advanced to drive past the housing to remove the extension members between the housing and the bore diameter to free the anchor.

1. The Field of the Invention
This invention relates to wells and, more particularly, to novel systems and methods for anchoring tubing within a well bore.
2. The Background Art
The presence of methane (CH4, a principal ingredient of natural gas) in underground coal seams has long been known. In the past, coal bed methane was vented to provide a non-explosive, non-suffocating environment in which coal miners could work. However, in recent times, methane has become a popular fuel for use in electric generators, furnaces, city buses, and the like. Methane's popularity may largely be attributed to its relatively low cost and clean combustion characteristics.
By drilling down to a coal seam aquifer and pumping out water, the pressure holding the methane within the coal seam may be relieved somewhat as it propels methane and water mixed therewith up the well bore (typically a cased bore). The methane may then be gathered, compressed, and shipped to customers. Well drilling and production techniques permit the collection of methane from coal seams at virtually all depths at which coal is available. Thus, coal bed methane may be collected from coal seams that are far too deep to be mined themselves.
In the past water and oil well technologies have been used to collect methane from coal seam aquifers. However, some of the equipment now in use is not optimal for the unique requirements of coal bed methane collection. For example, down-hole, tubing anchors developed for the oil industry do not have to deal with many of the annular flow demands found in coal bed methane extraction. When applied to a coal bed methane wells, typical anchors may limit gas production. What is needed is a down-hole tubing anchor specifically designed to handle annular flows, such as those found in coal bed methane wells.


The present invention relates to novel compounds as autotoxin inhibitors for treatment and prophylaxis of conditions or a disorder caused by autotaxin activation or increased concentration of lysophosphatidic acid, and also a pharmaceutical composition containing the same.

Autotaxin (hereinbelow, abbreviated as ATX) is an enzyme which is responsible for the increase in lysophosphatidic acid in ascites and plasma, and it is a secretory enzyme important for converting lysophosphatidylcholine (hereinbelow, abbreviated as LPC) into lysophosphatidic acid (hereinbelow, abbreviated as LPA) as a bioactive signaling molecule. ATX is also referred to as an ectonucleotide pyrophosphatase/phosphodiesterase 2 or lysophospholipase D. ATX plays a role in causing pathological conditions including fibrosis, arthritis inflammation, neurodegeneration, neuropathic pain, and cancer.
LPA is a physiologically active lipid having an influence on the migration, proliferation, and survival of various types of cells. Since the LPA level in plasma is highly related to the activity of ATX, it is believed that ATX is an important supply source of extracellular LPA.
It has been shown that, in pathological conditions, inhibition of ATX reduces the LPA level. LPA reduction may provide therapeutic benefit for a disorder with unsatisfied medical needs, including cancer, lymphocyte homing, chronic inflammation, neuropathic pain, fibrotic disorder like idiopathic pulmonary fibrosis (IPF), thrombosis, cholestatic pruritus, or the like that are induced, mediated, and/or propagated by increased LPA level and/or ATX activation.
Furthermore, it has been found that LPA is present in increased concentrations in plasma and ascites fluid from ovarian cancer patients in the early and late phase. Increased LPA level and altered expression and altered response of a receptor for LPA can be one of the causes of having an onset, a progress, or a result of ovarian cancer. LPA is also related to prostate cancer, breast cancer, melanoma cancer, head and neck cancer, bowel cancer, brain cancer, and thyroid cancer. LPA plays a role in tumor cell proliferation and invasion thereof into neighboring tissue, which can result in metastasization. These biological and pathobiological processes are switched on by activation by LPA of G-protein coupled receptors.
For the treatment of tumor patients, it is desirable to lower the LPA level. This can be achieved by the inhibition of enzymes which are involved with LPA biosynthesis, for example, ATX. Autotaxin belongs to the enzyme family of the nucleotide pyrophosphatases and phosphodiesterases representing an important starting point in anti-tumor therapy. That is because ATX is expressed to an increased extent in tumors to exhibit an influence on tumor cell proliferation and invasion into neighboring tissue, which can result in metastases formation.
Namely, as ATX is expressed in tumors and has an influence on tumor cell proliferation and infiltration to neighboring tissue, both of them can result in metastases formation, ATX is a target for anti-tumor therapy. Furthermore, during the course of angiogenesis, ATX together with other angiogenic factors causes blood vessel formation. Angiogenesis supplies the tumor with nutrients during tumor growth. As such, it can be said that inhibition of angiogenesis is an important starting point in cancer and tumor therapy.

This patent is subject to a terminal disclaimer.

Compounds as autotaxin inhibitors and pharmaceutical compositions comprising the same

Abstract: The novel compounds of the present invention are autotoxin inhibitors, and by inhibiting the production of lysophosphatidic acid, they are useful for treatment or prophylaxis of cardiovascular disorder, cancer, metabolic disorder, kidney disorder, liver disorder, inflammatory disorder, nervous system disorder, respiratory system disorder, fibrotic disease, ocular disorder, cholestatic and other forms of chronic pruritus, or acute or chronic organ transplant rejection.