An RFID tag having a tag antenna and an LSI chip, comprising: a power-supply pattern on which the LSI chip is mounted; a patch antenna that functions as the tag antenna; and a high-frequency connection section that makes a high-frequency connection between the power-supply pattern and the patch antenna. The high-frequency connection section is formed, for example, by forming a slot in the patch antenna, layering one end of a small dipole antenna that functions as the power-supply pattern over the slot so that it crosses over the slot, and supplying power from the small dipole antenna to the patch antenna.

The present invention relates to an RFID tag and manufacturing method thereof, and more particularly an RFID tag that comprises a patch antenna (flat antenna) as the tag antenna, and which is capable of demonstrating the required characteristics even when applied to an object such as a electrically conductive body, electrically non-conductive body or a body including liquid, and to the manufacturing method thereof.
Conventionally, in the distribution industry, transport industry and the like, a method of printing or sticking barcodes on a product itself or on the product packaging, and then reading that barcode with a barcode reader has been widely used as a method for managing individual product information. However, in that barcode processing method, when reading the barcode, the barcode reader must come in contact with the barcode, which makes the work of reading troublesome. Moreover, in the conventional barcode processing method, there is a problem in that it is not possible to add new information or update the information of the barcode itself.
Therefore, recently, a method of attaching an RFID (Radio Frequency Identification) tag to products in the place of a barcode, and reading that product information without contact using radio waves (electromagnetic coupling) is needed and is in the progress of being put into practical use. An RFID tag is a tag that has an IC card function to which a radio communication function for information has been added, and has a non-volatile memory that is capable of storing information, but does not have a battery (power source). Therefore, when reading information from the RFID tag memory without contact, a tag reader is constructed so that it supplies power to the RFID tag using electromagnetic waves, and reads information from the tag memory. With this kind of RFID tag, it is possible to greatly improve workability, and by using a technology such as a verification function or encoding between the reader and RFID tag, it is possible to ensure good security.
FIG. 38 is a drawing explaining an RFID tag, where a reader 1 transmits a radio signal (electromagnetic wave) of modulated data from an antenna 2 to an RFID tag 3. The antenna 3a of the RFID tag 3 inputs the received signal to a rectifier circuit 3b and a modulation and demodulation circuit 3c. The rectifier circuit 3b converts the radio signal to DC voltage, and supplies this DC voltage to the modulation and demodulation circuit 3c and a logic circuit 3d, and that voltage functions as a power supply. The modulation and demodulation circuit 3c demodulates control data that was sent from the reader 1, and inputs the result to the logic circuit 3d. The logic circuit 3d performs logic processing according to the control data (command), for example, reads information that is stored in an internal memory and inputs that information to the modulation and demodulation circuit 3c. The modulation and demodulation circuit 3c uses the information that was input from the logic circuit 3d to modulate a carrier signal, and transmits that signal as a radio signal from the antenna 3a to the reader 1.
Various types of RFID tags have been proposed. One of those is an RFID tag that is constructed by mounting an antenna pattern for radio communication and an IC chip (LSI) on a dielectric base sheet made of plastic, paper or the like. When this kind of RFID tag is attached to an electrically non-conductive object, the desired performance, such as communication distance and the like, is obtained. However, when this kind of RFID tag is attached to metal such as steel, the metal obstructs the radio waves used for communication with the RFID tag, and problems occur such as a decrease in the communication distance.
FIG. 39 is a drawing explaining the occurrence of this kind of problem, where (A) of FIG. 39 shows the case in which an RFID tag having a half-wave length dipole antenna pattern is attached to an electrically non-conductive object (not shown in the figure), and the power (open-circuit V) necessary for the IC chip is generated in the dipole antenna DP by the radio waves emitted from the reader/writer antenna. Also, current I flows in the dipole antenna making it possible to transmit an electromagnetic signal to the reader/writer antenna.
However, when an RFID tag having a dipole antenna pattern is attached to a metal object, the tangential component of the electric field on the metal surface becomes '0' from the boundary condition, and the surrounding electric field becomes '0'. Therefore, it is not possible to supply the necessary power to the IC chip of the RFID tag. Also, it is not possible to transmit (scatter) an electromagnetic wave to the reader/writer antenna from the tag antenna. In other words, as shown in (B) of FIG. 39, in the case of an RFID tag having a dipole antenna pattern DP that is attached to a metal object MTL, when current I flows in the dipole antenna DP, an image IMG, in which current flows in the opposite direction, is generated in the metal object MTL according to the mapping principle. This image cancels out the electric field that is generated by the dipole antenna current I, and thus it is not possible to supply the necessary power to the IC chip of the RFID tag, and it becomes impossible to transmit an electromagnetic wave to the reader/writer antenna from the tag antenna. Due to the aforementioned problems, an RFID tag having a tag antenna capable of transmitting and receiving electromagnetic waves without degradation of the antenna gain even when attached to a metal surface is desired.
As shown in (C) of FIG. 39, reducing the image effect by increasing the distance D from the surface of the metal object MTL to the dipole pattern DP is feasible, however, there is a problem in that the thickness of the RFID tag increases. Also, an RFID system in the UHF band has the advantage of having a long communication distance compared with other frequency bands, however, the length of a dipole type tag antenna for the UHF band normally must be a half wave length (approximately 16 cm). This length can be ensured and made more compact by attaching and bending the tag antenna around a dielectric body, however, the bandwidth becomes narrow. Taking the aforementioned problem into consideration, desired is an RFID tag that is small and compact and that has an antenna being capable of large bandwidth without degradation of the antenna gain even when the RFID tag is made small and compact.
Also, in order to efficiently supply the receiving power of the tag antenna to the LSI chip, the impedances of the tag antenna and the LSI chip must be matched (impedance matching). In order to accomplish this, an impedance conversion circuit is necessary, however, that would increase the manufacturing cost of the RFID tag. Therefore, it is necessary to perform impedance matching of the tag LSI and tag antenna without using an impedance conversion circuit. In other words, desired is an RFID tag that has an antenna for which impedance matching with the LSI chip is possible without having to use an impedance conversion circuit.
Conventional RFID tags having a dipole antenna have a problem in that the communication distance becomes poor when the RFID tag is attached to metal as described above. Therefore, some tag antennas have been developed that are compatible with metal even in the UHF band (refer to JP2002-298106A), however all of these are large having a thickness of 4 mm or more and length of 10 cm or more.
Therefore, the inventors of the present invention proposed an RFID tag having a small antenna that is capable of transmitting and receiving electromagnetic waves even when attached to a metal surface (refer to JP2006-53833A). As shown in FIG. 40, this proposed RFID tag 10 comprises: a rectangular shaped dielectric member 11; a transmission/reception antenna pattern 12 that forms a loop antenna around the surface of the dielectric member 11; and an IC chip 15 that is electrically connected to the antenna pattern 12 by way of a chip-mounting pad 13. With the RFID tag having this kind of loop antenna construction, transmission and reception of electromagnetic waves is possible, it is possible to lengthen the communication length even though the RFID tag is thin and is attached to a metal, the gain is nearly constant over a wide band, and furthermore, impedance matching is possible even without an impedance conversion circuit. However, manufacturing an RFID tag having loop antenna construction requires complicated processes such as side surface plating, or processing for wrapping an insulating film around the dielectric member, so there are problems in that the manufacturing cost increases, or high precision is required for positioning the wrapping.
Therefore, recently, use of a patch antenna as an RFID antenna has been proposed. With an RFID tag having this patch antenna construction, there is no need for special work such as side-surface plating or wrapping as in the case of a RFID tag having loop antenna construction.
However, in order to use a patch antenna as an RFID tag antenna, impedance matching with the LSI chip of the RFID tag must be performed. Normally, supplying power to a patch antenna can be done such that power is supplied to the patch antenna from a position that is matched to a 50Ω power supply line, however the impedance of the LSI chip becomes a different value greater than 50Ω, so an impedance conversion circuit is necessary. Also, with a conventional patch antenna it is necessary to make holes in the patch antenna in order to supply power, so there is a problem in that processing cost increases.
An RFID tag patch antenna has been proposed that does not need an impedance conversion circuit, and does not require making holes in the antenna in order to supply power (refer to U.S. Pat. No. 6,215,401). This proposed method is a method that supplies power to the patch antenna in a state in which the tag LSI is DC-connected to this patch antenna, and performs impedance matching by regulating the width and length of the line used for connection, however, it has a problem in that it is easy for construction of the power supply unit to become complicated. Also, in the case of using a board having a low frequency and low dielectric constant, the percentage of space occupied by the impedance matching circuit pattern and quarter wavelength converter with respect to the overall antenna becomes large.


A display panel, a display device, and a method for manufacturing a display panel are disclosed. The display panel includes a first power bus and a first power line. A display region of the display panel includes a first region and a second region, the first region and the second region include a plurality of first pixel units, respectively, the first power bus is between the first region and the second region, and the first power line is electrically connected to the first power bus and extends from the first power bus to the first region and the second region, respectively, so as to supply power to the plurality of first pixel units in the first region and the second region, respectively.

Compared with traditional liquid crystal panels, organic light-emitting diode (OLED) display panels have advantages such as a faster response speed, a higher contrast, a wider viewing angle, and a lower power consumption, and have been increasingly used for high-performance display. OLED display panels can be used in various electronic products such as a mobile phone, a tablet computer, a television, a laptop computer, etc.

Display panel, display device, and method for manufacturing display panel

CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD.


A light emitting device includes a first semiconductor layer having a first conductive dopant, an active layer on the first semiconductor layer, an electron blocking layer on the active layer, a carrier injection layer between the active layer and the electron blocking layer, and a second semiconductor layer having a second conductive dopant on the electron blocking layer. The carrier injection layer includes the first conductive dopant and the second conductive dopant, and the first conductive dopant of the carrier injection layer has a concentration lower than a concentration of the second conductive dopant.

1. Field
The embodiment relates to a light emitting device.
2. Background
In comparison with other light sources such as a fluorescent lamp and an incandescent lamp, the semiconductor light emitting device is advantageous because of low power consumption, a long lifetime, a fast response time, safety, and environment-friendliness. Accordingly, many studies and researches to substitute the existing light sources with the semiconductor light emitting device have been carried out.
In addition, semiconductor light emitting devices have a tendency increasingly used as light sources of a variety of lamps used in indoor and outdoor places, liquid crystal displays, electronic displays, or lighting devices such as streetlamps.
The above references are incorporated by reference herein where appropriate for appropriate teachings of additional or alternative details, features and/or technical background.


A process for making photonic crystal circuit and a photonic crystal circuit consisting of regularly-distributed holes in a high index dielectric material, and controllably-placed defects within this lattice, creating waveguides, cavities, etc. for photonic devices. The process is based upon the discovery that some positive ultraviolet (UV) photoresists are electron beam sensitive and behave like negative electron beam photoresists. This permits creation of photonic crystal circuits using a combination of electron beam and UV exposures. As a result, the process combines the best features of the two exposure methods: the high speed of UV exposure and the high resolution and control of the electron beam exposure. The process also eliminates the need for expensive photomasks.

A. Field of the Invention
The present invention relates generally to photonic crystals, and, more particularly to a process for making photonic crystal circuits using an electron beam and ultraviolet lithography combination.
B. Description of the Related Art
During the last decade photonic crystals (also known as photonic band gap or PBG materials) have risen from a relatively obscure technology to a prominent field of research. In large part this is due to their unique ability to control, or redirect, the propagation of light. E. Yablonovich, "Inhibited spontaneous emission in solid-state physics and electronics," Physical Review Letters, vol. 58, pp. 2059-2062 (May 1987), and S. John, "Strong localization of photons in certain disordered dielectric superlattices," Physical Review Letters, vol. 58, pp. 2486-2489 (June 1987), initially proposed the idea that a periodic dielectric structure can possess the property of a band gap for certain frequencies in the electromagnetic spectra, in much the same way as an electronic band gap exists in semiconductor materials. This property affords photonic crystals with a unique ability to guide and filter light as it propagates within it. In this way, photonic crystals have been used to improve the overall performance of many opto-electronic devices.
The concept of a photonic band gap material is as follows. In direct conceptual analogy to an electronic band gap in a semiconductor material, which excludes electrical carriers having stationary energy states within the band gap, a photonic band gap in a dielectric medium excludes stationary photonic energy states (i.e., electromagnetic radiation having some discrete wavelength or range of wavelengths) within a certain energy range or corresponding frequency range. In semiconductors, the electronic band gap is a consequence of having a periodic atomic structure which interacts with an electron behaving quantum-mechanically as a wave. This interaction gives rise to a forbidden range of energy levels, the so called electronic band gap. By analogy, the photonic band gap results if one has a periodically structured material, where the periodicity is of a distance suitable to interact with an electromagnetic wave of some characteristic wavelength, in such a way as to create a band of frequencies that are forbidden to exist within the material, the so called photonic band gap.
An envisioned use of these materials is the optical analog to semiconductor behavior, in which a photonic band gap material, or a plurality of such materials acting in concert, can be made to interact with and control light wave propagation in a manner analogous to the way that semiconductor materials can be made to interact with and control the flow of electrically charged particles, i.e., electricity, in both analog and digital electronic applications.
Planar photonic crystal circuits such as splitters, high Q-microcavities, and multi-channel drop/add filters have been investigated both theoretically and experimentally in both two- and three-dimensional photonic crystal structures. For two-dimensional photonic crystal structures, the photonic crystal consists of either an array of low index cylinders surrounded by a background material of sufficiently higher index or, an array of high index cylinders surrounded by a background material of sufficiently lower index. In both cases, in-plane confinement is achieved through multiple Bragg reflections that occur due to the presence of the material lattice, which represents the photonic crystal. For some three-dimensional photonic crystal structures, namely those that consist of a two-dimensional structure, or lattice, that are finite in height, confinement in the vertical direction is achieved through total internal reflection (TIR). In either case the main limiting factor in the wide spread use of these devices is the ability to get light into and out of these structures. For this reason, optical coupling structures have a pronounced impact on the operation of any photonic integrated circuit ("PIC").
In addition, whereas the lithography methods developed in the microelectronic industry have been successfully applied to fabricating small photonic crystal circuits, these methods are far from optimum for this purpose. For example, patterning a square centimeter of photonic crystal circuit for the near infrared wavelength requires exposing approximately 500 million circles. While not impossible, this is certainly strenuous for current lithography tools. Moreover, while slight variation in feature size is acceptable for electronic circuits, the tolerances in case of photonic crystal circuits are far more stringent for even small variation of hole sizes may compromise the performance of photonic crystal circuits.
Thus, there is a need in the art for an improved process for making photonic crystal circuits.

Process for making photonic crystal circuits using an electron beam and ultraviolet lithography combination


A throttle valve control device is provided which includes a throttle valve mounted in an intake pipe of an internal combustion engine, an actuator which drives the throttle valve so as to change an opening of the throttle valve, an operating condition sensor which detects operating conditions of the internal combustion engine, an accelerator sensor which detects an accelerator pedal position that represents an amount by which an accelerator pedal is depressed by a driver, and a control unit for controlling the throttle valve. The control unit includes a first setting circuit that sets a first target opening of the throttle valve based on the accelerator pedal position detected by the accelerator sensor, a second setting circuit that sets a second target opening of the throttle valve based on the accelerator pedal position detected by the accelerator sensor, and the operating conditions of the engine detected by the operating condition sensor, and a control circuit that compares the first target opening with the second target opening, and controls the actuator based on the larger one of the first target opening and second target opening.

In recent years, a control device for controlling a throttle valve mounted in an engine of an automobile is provided with a system for controlling an opening of a throttle valve in response to an electric control signal based on the amount of depression of an accelerator pedal (accelerator pedal position). Such a system is called drive-by-wire (DBW) control system.
A known example of the control device, which is constructed in the simplest form as shown in FIG. 6, is adapted to transmit a control signal which fully represents or corresponds to the amount of depression of the accelerator pedal (accelerator pedal position). In this case, the control device principally consists of a sensor (accelerator position sensor) 10 for detecting the amount by which the accelerator pedal is depressed by a driver, a motor (throttle actuator) 20 for driving the throttle valve, and a driver-by-wire control unit 30 for converting a signal (indicative of the accelerator pedal position) received from the accelerator position sensor 10, into a corresponding drive signal used for driving the motor 20.
Another known example of the control device, which is in FIG. 7, includes an electronic control unit (ECU) 40 in addition to the above-described components 10-30, and is capable of driving the throttle valve with higher accuracy. In this example, the ECU 40 sets a target throttle opening (target TPS), based on a pseudo accelerator pedal position obtained by correcting a signal (indicative of an accelerator pedal position) from the accelerator position sensor 10 in accordance with operating conditions of the engine and other information. The drive-by-wire control unit 30 converts an output signal of the ECU 40 representing the target throttle opening TPS, into a drive signal to be transmitted to the motor 20.
If the ECU 40 is interposed between the accelerator position sensor 10 and the drive-by-wire control unit 30, the throttle valve can be driven more appropriately, but a delay arises in the response of the throttle opening to the current position of the accelerator pedal, due to computing time taken by the ECU 40 to compute the target throttle opening TPS, and time required for transmitting signals between the ECU 40 and the drive-by-wire control unit 30 and between the ECU 40 and the accelerator position sensor 10. This may make a driver feel uncomfortable when he/she depresses the accelerator pedal (namely, when the vehicle is accelerated), for example.
Japanese laid-open Patent Publication (Kokai) No. 3-141839 discloses a technique for deriving the target throttle opening directly from the amount of depression of the accelerator pedal when the engine is in a non-loaded state, thereby to solve the problem of racing of the engine. Japanese laid-open Patent Publication (Kokai) No. 3-290027 discloses a technique for setting the target throttle opening to an appropriate value so as to achieve an effective engine brake. These techniques, however, cannot solve the above-described problem of the delay in the response.

Throttle valve control device and control method thereof


An artificial intelligence apparatus for calibrating an output position of a display panel according to an embodiment includes a camera configured to capture an image displayed by the display panel; and a processor configured to: transmit a signal for outputting a position reference image to the display panel, receive, via the camera, a captured image for the display panel, calculate an output position offset for the display panel in a predetermined unit based on the position reference image and the captured image, determine an output position calibration value for the display panel using the calculated output position offset, and transmit the determined output position calibration value to the display panel.

Recently, display devices are implemented not only as TVs or monitors, but also as various devices such as a digital signage or an outdoor signboard, and the range of use for the display devices has been extensively increased. In particular, cases in which one large display is formed by connecting a plurality of display panels are increased.
However, when a plurality of display panels are used to constitute a single large display, distortion may occur in an output image due to the mismatch of a color or a position between the display panels. In addition, even in a display composed of a single display panel, the distortion may occur in the output image due to the mismatch of the color between output elements. Further, a flexible display may cause the distortion in an image observed by a user due to the bending of the display even if there is no distortion in an image which is actually output.
Therefore, it is necessary to provide a technique for calibrating/correcting a display panel such that the distortion does not occur in an image actually observed by a user.

Artificial intelligence apparatus for calibrating output position of display panel of user and method for the same


A semiconductor device includes a semiconductor substrate, at least two gate electrode sections formed adjacent to each other on the surface of the semiconductor substrate, a first diffusion region formed in the surface area of the semiconductor substrate, except in the gate electrode sections, a substrate contact layer formed between the gate electrode sections in self-alignment therewith, a first side-wall insulating film formed on one of side-wall portions of each of the gate electrode sections, and a second side-wall insulating film formed on other of the side-wall portions of each of the gate electrode sections. The device further includes a second diffusion region whose conductivity type is opposite to that of the first diffusion region, formed in the surface area of the semiconductor substrate and corresponding to each of the edges of the gate electrode sections, the edges corresponding to the other of the side-wall portions.

1. Field of the Invention
The present invention relates to a semiconductor device and a method of manufacturing the same. More specifically, the invention relates to a dynamic random access memory (DRAM) including a bit line contact having a self-align contact (SAC) structure, which is sandwiched between two gates, or a DRAM-embedded semiconductor memory device.
2. Description of the Related Art
Recently, a halo ion implantation process has been used for the manufacture of DRAMs or DRAM-embedded semiconductor memory devices (see, e.g., U.S. Pat. No. 6,444,548). In the halo ion implantation process, ion implantation (I/I) is performed at an angle. For example, impurities whose conductivity type is opposite to that of the source and drain are ion-implanted into the surface area of a substrate (DRAM cell), which corresponds to the edges of the gate (the end portions of the channel), through a contact hole for forming a bit line contact (CB) having an SAC structure to connect the substrate to the bit lines (formation of a diffusion preventing layer by CB halo I/I). The following problem can thus be circumvented. As a cell transistor decreases in gate length, the impurities that are ion-implanted to form the source and drain diffuse toward the edges of the gate to thereby lower the threshold voltage of the cell transistor.
However, a gate-to-gate space in which a bit-line contact is provided is gradually narrowed. Impurities are therefore becoming difficult to ion-implant exactly into the surface area of the substrate, which corresponds to the edges of the gate, even by the CB halo I/I.

Semiconductor device with a self-aligned contact (SAC) structure


A protection circuit includes an interruption device formed to interrupt a current path between a protection circuit input and a protection circuit output upon exceeding a predetermined temperature at a temperature measurement location, and a control device formed to generate a control signal depending on a current in the current path, wherein the protection circuit is formed to increase the temperature at the temperature measurement location or decrease the predetermined temperature, when the control signal indicates that the current in the current path is higher than a threshold value current.

Protected or protecting semiconductor switches are increasingly employed to protect downstream components, such as traces on circuit boards or PCB (printed circuit board) traces or cables, and thus to take over a protection function. Complete employment or employment of all protection elements in a protection circuit for downstream components by semiconductor switches is, however, problematic particularly in an overload case due to the increased response times, as will still be explained later.
So as to adapt the response time of a conventional semiconductor switch, so-called smart semiconductor switches, which enable adjusting a load current threshold leading to immediate switch-off via a current sense function, are employed for protection, for example. These conventional semiconductor switches, for example, are made by the company International Rectifier offering a smart semiconductor switch or smart high-side switch IR 3310 in its portfolio. Moreover, conventional semiconductor switches supporting software-side programming of a load current threshold and a fading time, such as the products MC33982 or MC33984, are offered by the company Freescale within the scope of its Extreme Switch family.
In the conventional semiconductor switches, in which an overload current threshold is adjusted during operation, or an overload current threshold fixed prior to startup, it is disadvantageous that the semiconductor switches lose their conductivity when the load current exceeds the load current threshold.
Moreover, semiconductor switches in which overtemperature protection is implemented are offered, these semiconductor switches interrupting a current through a downstream component, such as a cable, when its temperature exceeds a certain temperature threshold. Due to the great thermal capacity of a package of a protecting semiconductor switch and the thermal capacities resulting from the arrangement of the package of the semiconductor switch on the PCB, a response of the protecting semiconductor switch is substantially more inert than that of a comparable protection, particularly in an overload case. By an overload case, a state in which a voltage greater than a nominal voltage for which the components of the circuit are designed is applied to a circuit, or a current greater than a nominal current for which the components of the circuit are designed flows into the circuit is understood.
Particularly in an overload case, when the load current is only slightly greater than the nominal current, a more inert response of the protecting semiconductor switch than that of the cable to be protected may occur.
In FIG. 8, response times for two protection elements and one cable are shown. The current flowing through a protecting element or a cable is plotted on the x-axis in amperes, whereas the response time is plotted on the y-axis in seconds. After the response time, the protection elements inhibit current flow through the protection element, or the cable will become destroyed.
Curve 11 shows a course of a response time of a cable in dependence on a current through the cable at a temperature of 85° C. Curve 13 explains a course of a response time of a semiconductor switch, here of the BTS6143 type, at a temperature of 85° C. in dependence on a current through the semiconductor switch, whereas curve 15 shows a course of a response time of a protection in dependence on a current through the protection. Here, the protection is a mini-fuse designed for 10 amperes. It can be seen from FIG. 8 that the response time of the conventional semiconductor switch is higher than the response time of the cable in a critical region 17. This leads to the fact that the cable becomes destroyed before the conventional semiconductor switch inhibits the current through the cable downstream thereto. Thus, the cable is not reliably protected by the semiconductor switch over the entire range of the current values illustrated in FIG. 8.

Protection circuit and method of protecting a load circuit


A musical tone control apparatus controls a musical tone corresponding to a movement itself of an object and the like which is detected by a detector Such detector detects also a moving speed, a moving force, a moving angle or an intensity of given impulse of the object. In the case where the detector is mounted in the vicinity of a player's joint, the detector detects a revolving or bending angle of the player's joint. Hence, the musical tone can be controlled based on such angle of the player's joint. Thus, through this musical tone control apparatus, the player can generate a musical tone having, for example, a desirable tone pitch, a desirable volume and a desirable tone color based on the movement of the object or the player's joint.

1. Field of the Invention
The present invention generally relates to a musical tone control apparatus using a detector, and more particularly to a musical tone control apparatus which controls a musical tone in response to a movement of a player and the like detected by a detector.
2. Prior Art
Conventionally, musical tones are generated by playing a natural musical instrument (such as a violin, a piano, an organ and a bass drum) and an electronic musical instrument and the like. In such musical instruments, a tone pitch and a tone color of the generating musical tone is controlled by touching or depressing keys, strings or pedals by use of hands or feet of the player.

Musical tone control apparatus using a detector


A touchscreen sensing module includes a first baseplate, a first conductive layer, a second baseplate, a second conductive layer, and a supporting substrate. A first groove in a predetermined shape is defined on a side of the first baseplate. The first conductive layer matches with the first groove in shape, and the first conductive layer is received in the first groove. A second groove in a predetermined shape is defined on a side of the second baseplate. The second conductive layer matches with the second groove in shape, and the second conductive layer is received in the second groove. The first conductive layer and the second conductive layer respectively match with the first groove and the second groove in shape, no etching is needed to obtain electrodes when forming the conductive layers, which avoids material waste and reduces costs In addition, a monitor is also provided by the present invention.

Touchscreen is a sensing device capable of receiving touch input signals. The touchscreen brings a new appearance for information exchange and is a new attractive information interactive device. For conventional touchscreens, ITO (Indium Tin Oxide) conductive layer is still a much important part.
When manufacturing ITO conductive layer, an ITO film is coated on an entire surface of a substrate, ITO patterning is then carried out to obtain electrodes, and transparent electrode silver leads are finally made. In ITO patterning, the formed ITO film is etched by etching process. ITO is a kind of expensive material, and patterning results in a large amount of waste of ITO, thereby increasing the cost. Besides, corrosive chemical materials are used in etching process, which causes environmental pollution.

Monitor, touchscreen sensing module thereof, and method for manufacturing the touchscreen sensing module


A display apparatus (10) having a display (12) including indicia representative of a measured parameter, an indicator (13) shiftable relative to the display, and a control assembly (14) for controlling the positioning of the indicator relative to the display. The control assembly includes a microprocessor (16) for receiving navigational signals and for converting the navigational signals to control signals and a stepper motor (18) responsive to the microprocessor for driving the indicator in response to the control signals. The control assembly also includes an indicator position sensor (20) for determining the actual position of the display indicator and for generating position signals representative of this actual position. The microprocessor uses these position signals for calibrating the stepper motor.

1. Field of the Invention
The present invention relates to navigation displays for use in aircraft navigation systems. More particularly, the invention relates to a navigation display having an indicator position sensor.
2. Description of the Prior Art
Avionics displays must be precisely aligned and calibrated to insure accurate indication of the position, heading, glide slope or other navigational parameter of the aircraft. The displays must also be mechanically, electrically, and magnetically linear.
Avionics displays are typically aligned and calibrated during their manufacture. Unfortunately, the alignment and linearity of avionic displays can change over time due to many factors, resulting in inaccurate display readings.
Prior art avionics displays do not include systems for checking the alignment and linearity of the displays once they are installed in an aircraft. Thus, pilots cannot accurately determine when a display's reading is inaccurate.
Additionally, prior art avionics displays are not self-calibrating. Thus, when the alignment or linearity of a display changes, the display must be removed from the aircraft and re-calibrated or replaced with a new display. Those skilled in the art will appreciate that both of these options are expensive and time-consuming.


A main object of the present invention is to provide a composite active material provided with a coating layer having satisfactory electron conductivity. The object is attained by providing a composite active material including an active material and a coating layer that is formed on the surface of the active material and contains a carbonaceous material and an ion conductive oxide, wherein the elemental carbon concentration of the coating layer surface is 17.0 atm % or more.

Along with the rapid distribution of information-related equipment and telecommunication equipment such as personal computers, video cameras and mobile telephones in recent years, more emphasis is put on the development of batteries (for example, lithium batteries) that are excellent as power supplies of the equipment. Furthermore, in fields other than the information-related equipment and telecommunication equipment, for example, in the automotive industry, development of lithium batteries and the like for electric cars and hybrid cars is underway.
Here, in lithium batteries that are conventionally available in the market, since organic liquid electrolytes making use of flammable organic solvents are used, improvements in terms of structure and material are needed for the installation of safety devices that suppress temperature increase at the time of short circuits, or for the prevention of short circuits. In this regard, since an all solid state battery in which the liquid electrolyte has been changed to a solid electrolyte, does not use flammable organic solvents in the battery, it is contemplated that simplification of safety devices is promoted, and excellent production cost or productivity is attained.
In the field of such all solid state batteries, attention has been paid for a long time to the interface of an active material and a solid electrolyte material, and there have been attempts to promote an enhancement in the performance of all solid state batteries. For example, Patent Literature 1 discloses an all solid state lithium battery which uses a lithium ion conductive solid electrolyte containing a sulfide as a main component, the battery having the surface of a cathode active material coated with a lithium ion conductive oxide. This technology is intended to suppress the formation of a high resistive layer that is generated at the contact interface between a sulfide solid electrolyte and a cathode active material.

Composite active material, all solid state battery, and method for producing composite active material


A displacement detecting device includes an irradiation optical system, an interference optical system, a light-receiving section, and a displacement detecting section. The irradiation optical system causes two light-beams to be incident on a diffraction grating respectively at different angles with respect to a plane perpendicular to the X-direction along which grating structures of the diffraction grating are periodically arranged. The interference optical system causes two Mth-order diffracted lights of respective light-beams incident on the diffraction grating to interfere with each other, so as to generate an interference light. The light-receiving section receives the interference light and detects an interference signal. The displacement detecting section detects a vertical displacement of a surface having the diffraction grating arranged thereon based on the change of the interference signal.

1. Field of the Invention
The present invention relates to a displacement detecting device adapted to detect the displacement in a direction perpendicular to a surface having a diffraction grating arranged thereon by using interference of light.
2. Description of the Related Art
Conventionally, displacement detecting devices for detecting the displacement in a direction perpendicular to a surface-to-be-measured are widely used. An example of such displacement detecting devices is described in Japanese Unexamined Patent Application Publication No. H06-241728. In the displacement detecting device described in Japanese Unexamined Patent Application Publication No. H06-241728, two pairs of monochromatic lights are used, each pair including two monochromatic lights having slightly mutually different frequencies. The two light-beams of each pair are incident on a diffraction grating of a first object and a diffraction grating of a second object. The two light-beams have mutually different incidence angles on both sides of the optical axis, and the incident directions of the two light-beams are asymmetrical to each other with respect to the optical axis. The two pairs are reverse-symmetrical to each other on both sides of the optical axis.
Next, two or more beams of diffracted lights, which have been subjected to light heterodyne interference, are taken out from two positions symmetrical to each other on both sides of the optical axis. Thus, phases φxz, φxz′ of light heterodyne detection signals are detected based on variation of optical path difference generated due to a position deviation in an X-direction parallel to a surface having two diffraction gratings arranged thereon and a position deviation in a Z-direction perpendicular to the surface having two diffraction gratings arranged thereon. Further, two-dimensional phase changes φx, φz of the two objects in the X-direction and the Z-direction are calculated based on sum and difference of the expression of phase φxz and the expression of phase φxz′.


The present application includes an independent and redundant measurement of anesthetic concentration, based on acoustic time-of-flight measurements, added to an anesthetic vaporizer. The redundant anesthetic concentration measurement is used to make the vaporizer inherently safe by design and monitor true vaporizer empty. Further, using an acoustic wave splitting technique and the time-of-flight measurements, the flows at the vaporizer inlet and outlet are computed. The flow measurements are used to monitor carrier gas loss, anesthetic consumption, and anesthetic delivery time remaining and provide such information to the vaporizer operator.

An anesthetic, or combination of anesthetics, may be delivered to a patient in order to produce the effects of sedation, analgesia, and neuro-muscular block, broadly referred to as anesthesia. Different anesthetics produce different effects and degrees of effects, and therefore, must be carefully delivered to the patient. When the anesthetic, or combination of anesthetics, is delivered in a gaseous form for patient inhalation, the anesthetic is combined with one or a combination of carrier gases for delivery to the patient. A vaporizer combines these two or more gases before delivery to the patient.
Acoustic wave time-of-flight (time-of-flight) t is the ratio of distance traveled (distance) D by an acoustic wave to acoustic wave speed (speed) v. As seen in FIG. 1, speed v has two components, one due to acoustic wave speed in the media (speed in media) vs in which it travels, and one due to the speed of the media itself (media speed) vm, arising from flow of the media (flow) F. Speed in media vm is related to media heat capacity ratio (heat capacity ratio) γ, media temperature (temperature) T, and media molar mass (molar mass) M. Direct measurement of time-of-flight t, rather than speed v, is possible using time-of-flight sensors (sensor) 5. Practitioners will recognize that a sensor can be a fully integrated device located at the point of measurement, comprised of a transducer and other components required to acquire and report a measurement, or that a sensor can be a distributed device, minimally having a transducer located at the point of measurement, with other components located elsewhere. The inclination angle α of the sensor mounting versus the direction of flow (inclination) determines the influence of flow F on speed v. These relationships are well known to practitioners and are summarized below.
                    t        =                  D          v                                    (        1        )                                v        =                              v            s                    ±                                    v              m                                    sin                                                                          α                                              (        2        )                                                      v            s                    =                                                    γ                                                                                RT                            M                                                                                t                                                              is                                                              time                                -                              of                                -                              flight                                                                    D                                                              is                                                              distance                                                                    v                                                              is                                                              speed                                                                                v            s                                                                        is                                                              speed                                                              in                                                              media                                                                                v            m                                                                        is                                                              media                                                              speed                                                                    α                                                              is                                                              inclination                                                                    γ                                                              is                                                              heat                                                              capacity                                                              ratio                                                                    R                                                              is                                                              molar                                                              gas                                                              constant                                                                    T                                                              is                                                              temperature                                                                    M                                                                                is                                                              molar                                                              mass                                    (        3        )
Gas composition affects speed v by modifying the speed in media vm. This occurs as gas composition affects both heat capacity ratio γ and molar mass M, dependent on the amounts of the component gases present based on volumetric concentration (concentration) c. Flow F affects speed v by modifying the media speed vm. These relationships are also well known to practitioners and are summarized below.
                    γ        =                  1          +                                    (                                                c                                                            γ                      1                                        -                    1                                                  +                                                      1                    -                    c                                                                              γ                      2                                        -                    1                                                              )                                      -              1                                                          (        4        )                                M        =                              cM            1                    +                                    (                              1                -                c                            )                                                  M              2                                                          (        5        )                                                      v            m                    =                      F            A                                                                                c                                                                                is                                                              concentration                                                              of                                                              component                                                              1                                                                                γ            1                                                                        is                                                              heat                                                              capacity                                                              ratio                                                              of                                                              component                                                              1                                                                                γ            2                                                                        is                                                              heat                                                              capacity                                                              ratio                                                              of                                                              component                                                              2                                                                                M            1                                                                        is                                                              molar                                                              mass                                                              of                                                              component                                                              1                                                                                M            2                                                                                is                                                              molar                                                              mass                                                              of                                                              component                                                              2                                                                    F                                                              is                                                              volumetric                                                              flow                                                                    A                                                              is                                                              flow                                                              cross                                -                              sectional                                                              area                                    (        6        )
In general, application of the previous relationships to concentration c requires removing the effect of flow F using time-of-flight measurements t of acoustic waves traveling upstream and downstream versus flow F, then eliminating the media speed vm term using equations (1) and (2). In general, application of the previous relationships to flow F requires removing the effect of speed in media vs using time-of-flight measurements t of acoustic waves traveling upstream and downstream versus flow F, then eliminating the speed in media vs term using equations (1) and (2). These techniques are well known to practitioners and the equations involved are shown below.
                              t          u                =                  D                      v            u                                              (        7        )                                          v          u                =                              v            s                    -                                    v              m                                    sin                                                                          α                                              (        8        )                                          t          d                =                  D                      v            d                                              (        9        )                                                      v            d                    =                                    v              s                        +                                          v                m                                          sin                                                                                α                                                                                t            u                                                                                is                                                              upstream                                                              time                                -                              of                                -                              flight                                                                                v            u                                                                        is                                                              upstream                                                              speed                                                                                t            d                                                                        is                                                              downstream                                                              time                                -                              of                                -                              flight                                                                                v            d                                                                                is                                                              downstream                                                              speed                                    (        10        )
Taking anesthetic to be a first component and carrier gas to be a second component, combining equations (3)-(10) implies the general relationship below exists among the parameters at the inlet and outlet of a vaporizer. Inlet gas consists only of carrier gas. Outlet gas consists of a combination of anesthetic and carrier gas. Practitioners will recognize that the concentration c of anesthetic at the outlet of the vaporizer is synonymous with vaporizer output (output) and is the fundamental vaporizer parameter to be controlled.c=ƒ(tiu,tid,tou,tod,γcg,γaTi,To,Mcg,Ma)  (11)                ƒ( . . . ) denotes "is a function of", with exact form dependent on context        c is output        tiu is inlet upstream time-of-flight        tid is inlet downstream time-of-flight        tou is outlet upstream time-of-flight        tod is outlet downstream time-of-flight        γcg is carrier gas heat capacity ratio        γa is anesthetic heat capacity ratio        Ti is inlet temperature        To is outlet temperature        Mcg is carrier gas molar mass        Ma is anesthetic molar mass
Referring back to earlier discussion, combining equations (6)-(10) and converting volumetric flow to volumetric flow at standard conditions using the Ideal Gas Law, implies the general relationships below exist.Fi=ƒ(tiu,tid,Pi,P,Ti,T)  (12)Fo=ƒ(tou,tod,Po,P,To,T)  (13)                Fi is inlet flow at standard conditions        Pi is inlet pressure        P is standard pressure        Ti is inlet temperature        T is standard temperature        Fo is outlet flow at standard conditions        Po is outlet pressure        To is outlet temperature
U.S. patent application Ser. No. 12/648,602 describes a scheme (prior vaporizer) to control output c from a vaporizer using a negative feedback controller based on time-of-flight measurements ti, to at the inlet and outlet of the vaporizer as suggested by equation (11). This involves computing a target outlet time-of-flight {circumflex over (t)}o from the inlet time-of-flight ti, the anesthetic identity ID, and the commanded output co. Then, an error signal e is formed for the outlet time-of-flight to. Finally, an actuator throttling the amount of anesthetic delivered from the vaporizer is driven from the error signal e to control output. Judicious mounting of sensors at the vaporizer inlet and outlet to negate the effect of flow F on speed v, maintaining the inlet and outlet at similar temperatures T to negate the effect of temperature variation, and the use of singular nominal values for heat capacity ratio γ and molar mass M for all possible combinations of carrier gas to make the vaporizer independent of the carrier gas source enable a simpler, less costly, and more available vaporizer than suggested by equation (11). The prior vaporizer was reported applicable to controlling a wide range of anesthetics, including, but not limited to, Desflurane, Enflurane, Halothane, Isoflurane, Sevoflurane, and Xenon in a wide range of carrier gases, including, but not limited to, air, carbon dioxide, heliox, nitrous oxide, and oxygen.
Risk management regulations require control measures be provided in a vaporizer to make it safe for patient use, with an inherently safe design being optimum. An inherently safe vaporizer design operates in such a way that it self detects unsafe conditions and shuts down anesthetic output without operator setup, monitoring, or intervention. The primary patient hazards associated with vaporizer use are over and under delivery of anesthetic. It is an objective of the present application to create a method whereby the prior vaporizer is extended to be an inherently safe design with respect to over and under delivery of anesthetic. A secondary patient hazard associated with vaporizer use is loss of carrier gas. It is an objective of the present application to create a method whereby the prior vaporizer is extended to monitor carrier gas loss within the vaporizer.
For a vaporizer operator (operator), two beneficial quantities to know are (1) anesthetic consumption (consumption) during a time period for patient billing purposes, and (2) anesthetic delivery time remaining (time remaining) at the current output and carrier gas flow input for vaporizer refilling purposes. The present application includes a method whereby the prior vaporizer is extended to monitor consumption. The present application also includes a method whereby the prior vaporizer is extended to monitor time remaining.
Application of time-of-flight t to flow F requires an implementation where flow F affects speed v. In the prior art, this is typically accomplished using a physical configuration where the sensors 5 are positioned with an inclination a to the direction of flow F, as seen in FIG. 1. In this manner, media speed vm has a component along the direction of acoustic wave 7 travel. Flow meter design, however, is a tradeoff of several design parameters that affect implementation feasibility, performance, and cost.
Three significant design parameters of time-of-flight flow meters used for gas composition and flow are (1) time-of-flight magnitude, (2) time-of-flight change magnitude, and (3) flow meter volume. The former two parameters must be reconciled with commercially available sensors and electronics, with maximization of both time-of-flight magnitude and time-of-flight change magnitude being preferred. The latter parameter of the three determines the speed of flow meter response to composition changes, as media in the flow meter must be fully exchanged for proper detection, with minimization of flow meter volume being preferred. The present application includes a new flow meter configuration whereby the tradeoff between the time-of-flight change magnitude and flow meter volume is improved versus the prior art.

Medical vaporizer and method of monitoring of a medical vaporizer


An image forming apparatus includes a first image forming unit and a second image forming unit, wherein the first image forming unit is arranged on a downstream side of the second image forming unit in a traveling direction of a transfer medium, the first developing unit contains a first developer containing a first toner and a first carrier, the second developing unit contains a second developer containing a second toner and a second carrier, and a ratio of a resistance value of the first carrier to a resistance value of the second carrier is within a range of from 4.0×10−5 to 9.7×10−1.

1. Technical Field
The present invention relates to an image forming apparatus, an electrostatic charge image developing carrier set, and a process cartridge set.
2. Related Art
In electrophotography, an electrostatic charge image formed on a surface of an image holding member (photoreceptor) is developed using a developer containing toner to forma toner image, and the obtained toner image is transferred to a recording medium and fixed with a heating roll or the like, thereby obtaining an image.

Image forming apparatus, electrostatic charge image developing carrier set, and process cartridge set


Security management techniques for service authorization for communication systems are provided. In one or more methods, a first element or function in a home network of a communication system registers a second element or function in the home network as a service consumer of one or more services provided by at least a third element or function in the home network, receives a request from the second element or function, and provides an access token to the second element or function responsive to authenticating the second element or function, the access token being used by the second element or function to access the one or more services provided by the third element or function.

This section introduces aspects that may be helpful to facilitating a better understanding of the inventions. Accordingly, the statements of this section are to be read in this light and are not to be understood as admissions about what is in the prior art or what is not in the prior art.
Fourth generation (4G) wireless mobile telecommunications technology, also known as Long Term Evolution (LTE) technology, was designed to provide high capacity mobile multimedia with high data rates particularly for human interaction. Next generation or fifth generation (5G) technology is intended to be used not only for human interaction, but also for machine type communications in so-called Internet of Things (IoT) networks.
While 5G networks are intended to enable massive IoT services (e.g., very large numbers of limited capacity devices) and mission-critical IoT services (e.g., requiring high reliability), improvements over legacy mobile communication services are supported in the form of enhanced mobile broadband (eMBB) services providing improved wireless Internet access for mobile devices.
In an example communication system, user equipment (5G UE in a 5G network or, more broadly, a UE) such as a mobile terminal (subscriber) communicates over an air interface with a base station or access point referred to as a gNB in a 5G network. The access point (e.g., gNB) is illustratively part of an access network of the communication system. For example, in a 5G network, the access network is referred to as a 5G System and is described in 5G Technical Specification (TS) 23.501, V15.0.0, entitled "Technical Specification Group Services and System Aspects; System Architecture for the 5G System," the disclosure of which is incorporated by reference herein in its entirety. In general, the access point (e.g., gNB) provides access for the UE to a core network (CN), which then provides access for the UE to other UEs and/or a data network such as a packet data network (e.g., Internet).
TS 23.501 goes on to define a 5G Service-Based Architecture (SBA) which models services as network functions (NFs) that communicate with each other using representational state transfer application programming interfaces (Restful APIs).
Furthermore, 5G Technical Specification (TS) 33.501, V0.7.0, entitled "Technical Specification Group Services and System Aspects; Security Architecture and Procedures for the 5G System," the disclosure of which is incorporated by reference herein in its entirety, further describes security management details associated with a 5G network.
Security management is an important consideration in any communication system. However, due to continuing attempts to improve the architectures and protocols associated with a 5G network in order to increase network efficiency and/or subscriber convenience, security management issues can present a significant challenge.

Security management for service authorization in communication systems with service-based architecture


A method and an apparatus for identifying mapping of a paper machine by means of a mapping test. The invention comprises forming a mapping model which takes the linear and non-linear shrinkage of a paper web into account. The mapping test result is analyzed to form a non-linear shrinkage profile and a linear mapping error from it. The linear error and the non-linear shrinkage profile thus obtained are used in the mapping model.

1) Field of the Invention
The invention relates to a method of identifying mapping of a paper machine actuator in a paper making process, the method comprising forming a mapping model which takes linear and non-linear shrinkage of a paper web into account, and performing a mapping test to obtain a mapping test result.
The invention also relates to an apparatus for identifying mapping of a paper machine actuator, the apparatus comprising means for performing a mapping test to obtain a mapping test result, and means for forming a mapping model which takes linear and non-linear shrinkage of a paper web into account.
2) Description of Related Art
In a continuous paper making process, quality parameters measured in the cross direction of a paper web are controlled mainly using actuators arranged in the cross direction with respect to the paper direction. The paper quality parameters are measured with dynamic or static measurement devices, which measure the paper web in the cross direction. The cross-directional measurements are vectors which are called profiles. These profiles are controlled with actuators, which can change the shape of a measured profile. Controlling of the profile requires information on where and how each actuator affects the measured profile. The relation of the cross-directional location of the actuators to the location of the measurement devices is called mapping, and the process or method by which the relation of the cross-directional location of the actuators to the location of the measurement devices is determined is called a mapping test (thus reference herein to "mapping" will be understood to involve a mapping test procedure or method). One example of this is the profile bar in the head box of a paper machine, whose position affects the basis weight of paper. The position of the profile bar is controlled with the measurement information obtained from measurement devices located at the dry end of the paper machine. It is desirable to exert influence on the basis weight cross profile to make it correspond to the shape of the target profile as accurately as possible. The target profile is usually straight, but in some cases it is desirable to increase or reduce the basis weight of the edges of the web to produce paper with as uniform quality as possible. Uniform quality is obtained when the mapping of the measurement of cross-directional control is aligned with the mapping of the actuators.
The further away the actuators and the measurements are from one another in the direction of the paper web, the more difficult it is to align them. The reason for this is that the paper web usually also moves in the cross direction during the paper making process. In addition, the paper shrinks in the cross direction of the paper web. The shrinkage can be divided into linear shrinkage and non-linear shrinkage. A model of mapping consists of a model for cross-directional shift and of a model for shrinkage.
The mapping model may be static or dynamic. In the static case, mapping is modelled using a step response test, and a table showing the correlation between the actuators and the measurements is formed from the test result. This correlation table is used even though the process would change. In the dynamic case, the position of the paper web edges is measured continuously and the model is updated dynamically as the edge information changes. Mapping can also be implemented adaptively, i.e. the mapping model is tuned at the same time as it is used.
The mapping model is usually modelled using a step response test when the control is in the manual mode. In that case the step response test is performed with a few actuators. In the step response test the actuators are moved either manually or automatically from one position to another, which provides a response which is seen in the measurement profile and which indicates the shape and location of the actuator response. The response locations determine mapping of the control, after which the correlation model of mapping is amended to conform to the result provided by the test.
The problem associated with prior art solutions is that the model of mapping has to be corrected manually after an automatic mapping test. The mapping error is obtained from the test results by comparing the result with the current model. If there are errors, as usual, it is difficult to find out which part of the multi-part mapping model contains errors. In that case the mapping model may be corrected with an erroneous parameter, which leads to an unsatisfactory final result. For example, the shape of the non-linear shrinkage profile may change between different lines, and in the case of a new line mapping is no longer in order because the shape differs from that of the shrinkage profile used in the model. Alternatively, the mapping model error can be corrected with linear shrinkage even though the error had been caused by non-linear shrinkage. In that case, the level of cross-directional control decreases as the process changes and it may be necessary to perform the mapping test and correct the error again.
Fu, C. Y., Nuyan, S., Bale, S., CD Response Detection for Control, Proc. TAPPI PCE&I '98, Vancouver, Canada, pages 95–106, March discloses how both the movement of actuators and signal processing as well as analysis of the test result can be automated. Metsälä, T., Shakespeare, J., Automatic Identification of Mapping and Responses for Paper Machine Cross Directional Control, Control Systems '98, Porvoo, Finland teaches that actuators can also be controlled with inputs instead of state changes. In that case actuators usually need to be controlled so accurately that the control has to be automated and performed by software.
U.S. Pat. No. 5,539,634 discloses a mapping method for reducing the disturbing effect of the state change test signal on the paper to be manufactured by using a pulse sequence as the test signal. The detector uses machine directional noise calculated using profile measurements.
U.S. Pat. No. 5,400,247 discloses a method which comprises determining an actuator resolution decoupling matrix for the controller by first saving the controller's actuator resolution control profile when the process is controlled, and by calculating its effect on the measurement profile with the matrix which does not include decoupling. Approximately at the same time the measured profile change is saved and decoupling is eliminated from it using the decoupling matrix, which is changed as these two signals are minimized. Using recursive identification, the decoupling matrix can be modelled adaptively. The solution relates to identification of decoupling, but does not define mapping of actuators and measurements.
D. Gorinevsky, M. Heaven, C. Hagart-Alexander, M. Kean and S. Morgan, New algorithms for intelligent identification of paper alignment and nonlinear shrinkage, Pulp & Paper, Canada, 1997, pages T209–T214 discloses a method for determining mapping and non-linear shrinkage. The solution comprises correlating the predicted change of the actuators with the actual change, and thus test results can also be obtained from the measurement resolution profile. The solution comprises optimising alignment of two parameters of linear mapping by adjusting the predicted change and the actual change to each other as accurately as possible. The solution requires matrixes the size of which may be even 800 * 100, for which reason the method requires a considerable amount of calculation. In addition, the solution comprises generating a shrinkage profile using the inference rules of fuzzy logic.
U.S. Pat. No. 5,400,258 defines a mapping method which comprises filtering the result of the step response test by correlating the vector of the test actuator with the result vector. By using this pattern identification algorithm, noise can be reduced in the test result and mapping points found out. The method employs a measurement profile which comprises as many zones as there are actuators. The resolution of the measurement profile thus corresponds to the actuator resolution. As the result of the mapping test, a shrinkage coefficient profile is calculated, which is used for making the measurement profile to correspond to the actuators by calculating the coefficients of the shrinkage coefficient profile as a relation of the shrinkage of actuator zones to the total shrinkage. Any errors in mapping are corrected by changing the shrinkage coefficient profile. For example, if the error is in linear shrinkage, it is corrected in the shrinkage coefficient profile, which will no longer show the real physical non-linearity of shrinkage. Furthermore, the shrinkage profile is determined only by calculating it from the test results, in which case it is assumed that the result points are completely correct. If the result points have been defined incorrectly, which is rather common in processes in which the actuator responses are rarely identical, the shrinkage coefficient profile will also contain errors, and thus the physical non-linearity of shrinkage may be modelled incorrectly.
An object of the present invention is to provide an improved method and apparatus for identifying mapping between actuators and corresponding measurement points.

Method and apparatus for identifying mapping of paper machine actuator


The invention provides a method for producing a group III nitride based semiconductor having a reduced number of crystal defects.

Generally, in production of group III nitride based semiconductor crystal substrates, a group III nitride based semiconductor layer is formed on a sapphire substrate. However, due to difference in lattice constant between a group III nitride based semiconductor and sapphire, a large number of dislocations are unavoidably generated in the produced group III nitride based semiconductor crystal substrates. Among such dislocations, screw dislocations result in generation of vacancies having a diameter of a few to several nanometers, which are called micropipes and which penetrate through the layer in the thickness direction. If such a group III nitride based semiconductor is used to produce a semiconductor device, micropipes may cause current leakage, to thereby deteriorate performance of the semiconductor device. Therefore, reduction of dislocation density is preferred.
Possible approaches for reducing dislocation density are known as methods for producing group III nitride based semiconductors disclosed in Patent Documents 1 and 2. In these methods, a group III nitride based semiconductor layer is etched to form etch pits, and another group III nitride based semiconductor layer is epitaxially grown on the etched group III nitride based semiconductor layer so that the etch pits are filled with the epitaxial layer. According to these methods, dislocation density of the upper group III nitride based semiconductor layer can be lowered as compared with that of the lower group III nitride based semiconductor layer.
Etching techniques for forming etch pits employed in the production methods are also disclosed. Patent Document 1 discloses an etching process employing ammonia or hydrogen gas, whereas Patent Document 2 discloses a wet etching process employing phosphoric acid, sulfuric acid, or KOH, and an etching process employing HCl gas, Cl2 gas, or BCl3 gas.
Patent Document 1 does not disclose the shape of etch pits. Patent Document 2 discloses that the shape of the formed etch pits is conical, hexagonal pyramid, bowl-like, partial-spherical, or a complex shape thereof.
Patent Document 1: Japanese Patent Application Laid-Open (kokai) No. 2002-367909
Patent Document 2: Japanese Patent Application Laid-Open (kokai) No. 2002-261027

Group III nitride based semiconductor and production method therefor

Abstract: A GaN layer 2 is epitaxially grown on a sapphire substrate 1 having C-plane as a main plane (FIG. 1A). Then, the layer is wet-etched by use of a 25% aqueous TMAH solution at 85° C. for one hour, to thereby form an etch pit 4 (FIG. 1B). Then, a GaN layer 5 is grown on the GaN layer 2 through the ELO method (FIG. 1C). The thus-formed GaN layer 5 has a screw dislocation density lower than that of the GaN layer 2.


An oscillator circuit includes: a plurality of delay elements, a first delay element configured to receive a first oscillator signal outputted from a second delay element in one stage before the first delay element and a second oscillator signal outputted from a third delay element in two or more stages before the first delay element, the plurality of delay terminals being connected in a ring by at least three or more delay elements, and the first oscillator signal and the second oscillator signal having phases different from one another; and a bias voltage generator configured to change a ratio of a first input bias current for the first oscillator signal to a second input bias current for the second oscillator signal, in accordance with a first bias voltage and a second bias voltage supplied to the plurality of delay elements.

In interface circuits that transmit and receive data between circuit boards and between large scale integrated circuits, multiple-phase clocks are used for sampling data at a plurality of timings.
For example, in high-speed signal transmission systems, optimum timings for sampling data vary depending on losses of received signals and the strength of equalization processing. Ideal timings for sampling received signals are a timing of the center of data (the center of an eye) at which the received signal has the largest amplitude and a timing at which data makes a transition. However, after equalization processing, the largest amplitude is not obtained at the center of data in some cases. To address this, there is a way in which, using a function called an eye monitor, the phases of clocks for data sampling are changed (generating multi-phase clocks) and thus an optimum sampling timing is determined.
One approach for generating multi-phase clocks is a method of using a phase interpolator. A phase interpolator, using an accurate reference clock, enables phase adjustment to be performed accurately. However, a clock source for generating an accurate reference clock is used, and thus the cost and the circuit size increase.
Another approach for generating multi-phase clocks is a method of using a ring oscillator, or an injection locked ring oscillator in which an additional feature for improving jitter characteristics of a ring oscillator is added.
Examples of the related art are disclosed in Japanese Laid-open Patent Publication No. 2011-61325 and Japanese Laid-open Patent Publication No. 2013-106062.


A liquid spray air purification apparatus utilizing at least two liquid migration eliminator members for providing effective containment of substantially all of the spray liquid employed in the system to within a segregated spray liquid loop so as to prevent spray liquid from interfering with the operation of electrical and other auxiliary components within the apparatus and to minimize spray liquid loss from the recirculation cycle. The segregated spray liquid loop is formed by a liquid spray chamber, a spray liquid sump and recirculation means interconnecting the sump and the liquid spray chamber. Auxiliary components include a particulate filter, fan means, germicidal ultraviolet light means, dehumidification means, heating means and a compressor. The apparatus is designed for use in efficiently improving interior environmental air quality within homes, offices, hospitals and the like, and is adaptable for use in motorized vehicles.

Atmospheric pollutants have been posing an ever-increasing threat to interior environmental air quality. This is so not only in major metropolitan areas, but also in some of the less populated and less industrialized regions of the world. The problem is particularly acute, for example, in those areas subject to the effects of the noxious gases and particulates naturally released into the atmosphere from volcanoes before, during and after eruptions.
Volcanic gas, commonly referred to as "vog", is a highly irritating and potentially hazardous mixture of gaseous components, including carbon dioxide, sulfur dioxide, hydrogen sulfide, hydrochloric acid, hydrogen, carbon monoxide, hydrofluoric acid, and other trace gases and volatile metals. The reported adverse health effects of these gases include sore throat, headache, damage to eyes and mucous membranes, bronchitis, asthma, and in extreme circumstances, even death. While most severe in the areas immediately surrounding volcanic vents and fumaroles and in low spots on the flanks of volcanoes, the atmospheric pollution problems caused by vog can sometimes persist for long distances downwind from a volcano and have a rather widespread adverse effect on interior environmental air quality.
Based upon the known water-solubility properties of the noxious gaseous components of vog, the potential exists for vog-contaminated interior environmental air to be effectively purified with the use of aqueous liquid spray air purification techniques. Such techniques are well known in the art, and generally comprise treating a contaminated airstream flowing through a suitable spray chamber with a recirculating liquid spray so as to wash the contaminants from the airstream, followed by a mechanical drying of the washed airstream through a mist eliminator before discharge of the purified airstream. These techniques have been found effective in removal of a number of common air pollutants, including dust, pollen, smoke, aerosols, nitrogen oxides, sulfur dioxide, hydrogen sulfide, hydrochloric acid, carbon dioxide, carbon monoxide and ozone. Nevertheless, liquid spray air purification systems have thus far failed to gain wide acceptance in other than industrial applications. One of the major drawbacks to interior environmental use of these systems has been their high maintenance requirements, which in large part are related to ineffective management and control of the spray liquid within the system.
The Sewell et al U.S. Pat. No. 5,389,120, issued Feb. 14, 1995, represents an attempt to adapt a liquid spray air purification system for residential use by incorporating it into a standard heating, ventilation and air conditioning system installed within the space between the roof and ceiling of a building. However, without an effective solution to the liquid management and control problems within the basic air purification system itself, the installation proposed by Sewell et al would only serve to render the system more difficult to access for servicing its high maintenance requirements.


It has been shown that a 5' untranslated leader sequences of RNA virus non-structural genes act as enhancers of translation of mRNA. These leader sequences can be ligated upstream of an appropriate mRNA or used in the form of a cDNA expression vector. The translational enhancers are effective in many different types of expression systems, such as plant cells, bacterial cells and animal cells as well as translation systems made from these cells. Tobacco mosaic virus (TMV), turnip yellow mosaic virus (TYMV), brome mosaic virus (BMV), alfalfa mosaic virus (A1MV) and rous sarcoma virus (RSV) are examples of RNA viruses whose 5' untranslated leader sequences of non-structural genes enhance translation.

1. Field of the Invention
This invention relates to enhancers of the translation of mRNA.
2. Discussion of the Background
The mechanisms by which eukaryotes and prokaryotes initiate translation are known to have certain features in common and to differ in others. Eukaryotic messages are functionally monocistronic, translation initiates at the 5' end and is stimulated by the presence of a cap structure (m.sup.7 G.sup.5' ppp.sup.5' G . . .) at this end (Shatkin, Cell 9 645 (1976)). Prokaryotic messages can be polycistronic, can initiate at sites other than the 5' terminus, and the presence of a cap does not lead to translational stimulation. Both eukaryotes and prokaryotes begin translation at the codon AUG, although prokaryotes can also use GUG. Translation in both is stimulated by certain sequences near the start codon. For prokaryotes, it is the so-called Shine-Dalgarno sequence (a purine rich region 3-10 nucleotides upstream from the initiation codon). For eukaryotes, it is a purine at the -3 position and a G residue in the +4 position (where the A of the AUG start codon is designated +1), plus other sequence requirements involved in finer tuning. This is part of the "relaxed" version of the scanning model (Kozak, Nuc. Acids. Res. 13, 857 (1984)) whereby a 40S ribosomal sub-unit binds at the 5' end of the eukaryotic mRNA and proceeds to scan the sequence until the first AUG, which meets the requirements of the model, is encountered, at which point a 60S sub-unit joins the 40S sub-unit, eventually resulting in protein synthesis. Reference can be made in this connection to the following publications by Kozak: Cell 15, 1109 (1978), Nuc. Acid. Res. 9, 5233 (1981) and Cell 44, 283 (1986).
Beyond these sequence requirements in and about the initiation codon, there are no additional regions of mRNA which are known to enhance translation reproducibly.
During eukaryotic transcription, sequences known as "enhancer" regions can provide transcriptional stimulation.
RNA viruses contain either positive or negative single-stranded RNA or double-stranded RNA. The class of RNA viruses include the majority of plant viruses (over 90%), some animal viruses and several bacteriophage.
One of the most widely studied of RNA viruses is tobacco mosaic virus (referred to hereinafter as TMV). The complete nucleotide sequence of TMV is known (Goelet et al., Proc. Natl. Acad. Sci. USA 79 5818 (1982)). The 5'-region of TMV RNA was first isolated in 1965 as an RNase T.sub.1 -resistant fragment 70 nucleotides long (Mundry, Z. Vererbungsl. 97, 281 (1965)) and free of internal G residues (Mandeles, J. Biol. Chem. 243, 3671). This region (later referred to as omega, Mandeles J. Mol. Biol. Chem. 243 3671) was sequenced (Richards et al. Eur. J. Biochem. 84 513 (1978)) and shown to form disome initiation complexes with wheat germ ribosomes. One ribosome occupies the AUG initiation side of the 126 KDa protein coding region and the second binds to the upstream leader sequence (Filipowicz and Haenni, Proc. Natl. Acad. Sci. USA 76, 3111 (1979); Konarska et al., Eur. J. Biochem. 114, 221 (1981)). Recent additional evidence to support the role of omega in ribosome association comes from the uncoating/gene expression data of Wilson and co-workers, (reviewed in J. Gen. Virol. 66, 1201 (1985) and UCLA Symp. 54 159 (1987)). It was observed in various in vitro translation systems that TMV particles are uncoated by the binding of ribosomes to the 5' end and their translational movement toward the 3' terminus.

Untranslated leader sequences from RNA viruses as enhancers of translation