Low mercury or mercury free primary or secondary alkaline manganese dioxide-zinc cell that comprises a manganese dioxide cathode with a manganese dioxide active material and a conductive powder. The active material and powder are uniformly mixed and pressed to form a porous cathode body. The cell further comprises a gelled zinc anode, a separator between the cathode and the anode, and an alkaline electrolyte. The anode gel comprises a modified starch as a gelling agent capable of releasing hydrogen gases developed during slow corrosion of zinc in the anode.. A hydrogen recombination system can be used in the cell to limit inside pressure within permitted limits by recombining the evolved hydrogen.

Owing to the increased significance of environmental protection, recent research and development work in the battery field has been concentrated on decreasing or eliminating the use of mercury in primary and secondary cells. A low mercury cell cannot comprise more than 0.025 by weight of mercury which is equivalent to about 0.25% by weight of mercury content in the anode. (Hereafter, the term "wt. %" is used to indicate a percentage by weight of the indicated component).
It can be expected that in the foreseeable future the commercial sale of mercury containing cells will be prohibited in most industrialized countries.
While the elimination of the mercury content in cells is a reasonable requirement in view of environmental protection, this causes numerous problems regarding cell operation and performance.
These problems have been summarized in detail in the paper of D. von Borstel entitled: "Das (uberwundene) Quecksilberproblem der Primarzellentechnik"--in English translation: "The (Overcome) Mercury Problem of Primary Cells Technique"--published in Dechema-Monographien Band 124 - VCH Verlagsgesellschaft 1991 pp. 375-388.
These problems are connected mainly with the following properties of cells without a sufficient amount of mercury:
increasaed generation of hydrogen gas due to zinc corrosion;
decreased loadability of the zinc; and
decreased electrical conductivity of the zinc particles.
While the cited paper deals mainly with primary cells, in case of secondary (rechargeable) cells these problems are more serious, since the electrochemical processes will be repeated in all cycles; and with increased cycle number the initially less significant magnitude of these phenomena become more apparent.
There are different approaches to the ways how these adverse effects can be overcome. In the commercially available low mercury and mercury free alkaline manganese dioxide-zinc primary and secondary cells, corrosion inhibitor materials are added to the anode gel which decrease hydrogen evolution from the zinc particles. The use of these inhibitor materials causes, however, further problems, i.e., they decrease conductivity and cell performance under high current drains.
The performance of such commercially available low mercury or mercury free cells is noticeably inferior compared to those including mercury; they leak at elevated temperature, and in secondary cells the cycle capacity sharply decreases with increasing cycle number and therefore they have smaller cumulative capacity values than conventional cells have.
The object of the present invention is to provide a low mercury or mercury free alkaline manganese dioxide-zinc cell in which the above problems become less significant or are eliminated.
The invention is based on the discovery that the approach of using corrosion inhibitors is insufficient for solving the problems connected with the lack of mercury, since with increased corrosion inhibition properties the adverse effects will also be higher. Therefore, there will be no acceptable compromise concerning cell performance.
In contrast to this approach, it has been recognized that the corrosion of high purity zinc is a slow process, the hydrogen gas development lies in the range of 1-5 microliter/day/gram, and the thus developed hydrogen can be recombined. The purity of the zinc has, however, an increased significance, since in solutions contaminated with heavy metal ions or particles or other contaminating materials present in the cathode material (like iron, copper, nickel, manganese dioxide, graphite etc.) the gas development can be several thousand times as high as in case of pure zinc.
In accordance with the inventive approach, it has been discovered that starch, preferably epichlorhydrin modified starch, should be used in the anode as a gelling agent, preferably in an amount between about 0.5 to 4 wt. %. The use of starch as gelling agent has already been known in the prior art; however, it was always combined with a substantial amount of other gelling agents like carboxy methyl cellulose (CMC) or CARBOPOL, whereby such anode gels obtained gas bubbles retention properties.
Gels made using epichlorhydrin modified starch do not retain hydrogen bubbles developed in the anode.
The gas release properties of the anode gel improve still further if the gel contains 0.5 to 3 wt % magnesium oxide.
The gelling properties of epichlorhydrin modified starch improve substantially if the anode gel is made at elevated temperatures between about 40.degree. C. and 65.degree. C., preferably between 50.degree. C. and 60.degree. C.
In accordance with the inventive concept, care should be taken that an inside pressure build up within the cell will not exceed permitted limits. Therefore, the cell comprises a hydrogen recombination system. Such systems are known in the art and, based on their operational principles, can be grouped in one of two types. The first type is the fuel cell electrode hydrogen recombination system which operates electrochemically, and the second type is a chemical recombination system using a hydrogen recombination catalyst. The fuel cell type hydrogen recombination systems use generally an auxiliary electrode as disclosed in U.S. Pat. No. 4,925,747 issued to Kordesch et al, and their operation does not influence the rechargeability of manganese dioxide. The second type reduces manganese dioxide to crystalline compounds which are not reversible, and the reduced manganese dioxide cannot be recharged any more. However, if the rate of gas evolution is low, the loss of rechargeability can be negligibly low; therefore, this type of hydrogen recombination system can also be used a suggested in the cited in U.S. Pat. No. 4,925,727.
It belongs to the inventive concept to utilize all means to slow down the pressure increase in the cell and to increase the cell performance.
It has been found that most of the materials that increase corrosion come from the porous manganese dioxide cathode in the form of dust, and this kind of contamination can be reduced efficiently if a protective coating is provided on the cathode surface--which coating is an ion permeable and ionically conductive layer that enables, normal cell operation. The thickness range of the coating can vary between about 25 and 200 microns and the coating can be made from a solution that comprises 2 to 5 wt. % starch, a viscosity control additive and 1-5 wt. % magnesium oxide. The presence of starch in the layer is preferable, since it has good soaking properties with the KOH electrolyte and contributes to preserving the required electrolyte content of the cathode.
A further corrosion source can be the metal current collector for the negative terminal that must be in contact with the anode gel and which is made generally of brass, copper or bronze. According to a further inventive aspect, the corrosion caused by the current collector on overdischarge can be eliminated or reduced to a negligible extent if the current collector is coated with gold.
In view of hydrogen evolution, it is preferable that a 9 to 12N potassium hydroxide forms the electrolyte, since the rate of zinc corrosion at such concentrations is lower than in commonly used lower concentration KOH electrolytes.
A further drawback of mercury free anode gels is their decreased interparticle conductivity. This drawback can be eliminated if the anode gel comprises at least 0.1 wt. % of particles with gold coated surface. Such particles can take any form, i.e. they can be fibers, flakes, etc. In the case of fibers, it is preferred that they have a length to diameter ratio between 100:1 and 1000:1 and that they are plated with gold.
The cells according to the invention can both be primary or secondary cells. The combination of the above summarized means enables the production of mercury free rechargeable cells with performance comparable to cells containing mercury.
Such cells can be of the commonly used cylindrical form, but any other cell configuration can be well within the scope of the invention.

Low mercury or mercury free alkaline manganese dioxide-zinc cell


The present invention relates to methods of treating inflammatory diseases, inhibiting production of adhesion molecules on endothelial cells, inhibiting production of nitric oxide synthase by macrophages, inhibiting production of tissue factor by endothelial cells, reversing the inhibitory effects of lipophosphoglycan on endothelial cells or macrophages, and targeting a material to endothelial cells, fibroblasts, or monocytes, by administering lipophosphoglycan or lipophosphoglycan analog. Also disclosed is an isolated DNA molecule suitable for connection to a gene capable of transcription where lipophophoglycan or lipophosphoglycan analogues bind to the DNA molecule and antagonizes transcription of the gene.

This invention relates to methods and novel compounds for treating autoimmune and vascular disease. In particular, the invention relates to the use of lipophosphoglycan and novel lipophosphoglycan analogs to treat these diseases.
Pro-inflammatory cytokines, such as interleukin-1 (IL-1), tumor necrosis factor (TNF-xcex1), and interleukin-6 (IL-6) are important mediators of sepsis, rheumatoid arthritis and reactive arthritis. They are also associated with other conditions such as atherosclerosis, progression of disease in persons infected with the human immunodeficiency virus, and autoimmune disorders. There were 250,000 reported cases of sepsis in the United States in 1987. Rheumatoid arthritis in the adult population is estimated at 1%, with an additional 1% of the population estimated to have reactive arthritis or juvenile rheumatoid arthritis. Therefore, pro-inflammatory cytokines play a direct role in the pathogenesis of conditions in nearly 3 million persons. Current therapeutic methods are not very effective in reducing the morbidity and/or mortality associated with these diseases.
Depressed cellular immunity and IL-1xcex2 production are associated with leishmaniasis caused by Leishmania donovani. Leishmania donovani is an obligate intracellular parasite of the mammalian macrophage. It is worldwide in distribution and annually causes disease in 20 million persons. The life cycle of Leishmania parasites consists of two stages. The flagellated promastigote form propagates in the alimentary tract of its insect vector (the sandfly) and develops into the infectious metacyclic promastigote stage. During the sandfly""s blood meal, the metacyclic promastigotes are inoculated into the mammalian host. The promastigotes evade local host defense, disseminate, and enter macrophages throughout the reticuloendothelial system. Within macrophages they transform into the amastigote form which remains for the life of the new host. S. J. Turco and A. Descoteaux, xe2x80x9cThe Lipophosphoglycan of Leishmania parasites,xe2x80x9d Annu. Rev. Microbiol., 46:65-94 (1992); J. L. Ho, R. Badaro, D. Hatzigeorgiou, S. G. Reed, and W. D. Johnson, Jr., xe2x80x9cCytokines in the Treatment of Leishmaniasis: From Studies of Immunopathology to Patient Therapy,xe2x80x9d Biother. 7:223-35 (1994).
The two poles of immune responses in patients infected with L. donovani are: 1) a delayed type hypersensitivity (xe2x80x9cDTHxe2x80x9d) and CMI to Leishmania antigens which is associated with containment of infection, and 2) B cell activation with absence of DTH, and T-cell reactivity that is associated with visceral leishmaniasis (xe2x80x9cVLxe2x80x9d). J. L. Ho, R. Badaro, D. Hatzigeorgiou, S. G. Reed, and W. D. Johnson, Jr., xe2x80x9cCytokines in the Treatment of Leishmaniasis: From Studies of Immunopathology to Patient Therapy,xe2x80x9d Biother. 7:223-35 (1994). Patients with acute VL have both a functional T-cell defect with decreased production of IL-2 and IFN-xcex3 in response to Leishmania antigens or mitogens, and a presumed monocytic defeat with decreased in vitro production of IL-1xcex2 and TNF-xcex1 in response to Leishmania systate, LPS, or Listeria. E. M. Carvalho, R. Badaro, S. Reed, W. D. Johnson, Jr., and T. Jones, xe2x80x9cAbsence of IFN-xcex3 and IL-2 Production During Active Visceral Leishmaniasis,xe2x80x9d J. Clin. Invest, 76:2066-9 (1985). These defects are attributed either to Leishmania products, or to a predominance of the T helper-2 (xe2x80x9cTh2xe2x80x9d) type of lymphocytes. S. J. Turco and A. Descoteaux, xe2x80x9cThe Lipophosphoglycan of Leishmania Parasites,xe2x80x9d Annu. Rev. Microbiol., 46:65-94 (1992); P. Scott, xe2x80x9cIFN-xcex3 Modulates the Early Development of Th1 and Th2 Responses in a Murine Model of Cutaneous Leishmaniasis,xe2x80x9d J. Immunmol., 147:3149-3155 (1991); K. Varkla, R. Chatelain, L. M. C. C. Leal, and L. Coffman, xe2x80x9cReconstitution of C.B-17 SCID Mice with BALB/c T cells Initiates a T Helper Type-1 Response and Renders Them Capable of Healing Leishmania Major Infection,xe2x80x9d Eur. J. Immunol. 23:262-268 (1992); C. L. Karp, S. H. El-Sagi, T. A. Wynn, M. M. H. Satti, H. M. Kordojani, F. A. Hashim, M. Hag-Ali, F. A. Neva, T. B. Nutman, and D. L. Sacks, xe2x80x9cIn vivo Cytokine Profiles in Patients with Kala-azar: Marked Elevation of Both Interleukin 10 and Interferon-gamma,xe2x80x9d J. Clin. Invest. 91:1644-8 (1993); H. G. Ghalib, M. R. Piuvezam, Y. A. W. Skeiky, M. Siddig, F. A. Hashim, A. M. El-Hassan, D. M. Russo, and S. G. Reed, xe2x80x9cInterleukin 10 Production Correlates with Pathology in Human Leishmania donovani Infections,xe2x80x9d J. Clin. Invest. 92:324-9 (1993); L. Morris, A. B. Troutt, E. Handman, and A. Kelso, xe2x80x9cChanges in the Precursor Frequencies of IL-4 and IFN-xcex3 Secreting CD4+ Cells Correlate with Resolution of Lesions Inmurin Cutaneous Leishmaniasis,xe2x80x9d J. Immunol. 149:2715-2721 (1992); M. D. Sadick, F. P. Heinzel, B. J. Hodaday, R. T. Pu, R. S. Dawkins, and R. M. Locksley, xe2x80x9cCure of Murine Leishmaniasis with Anti-interleukin 4 Monoclonal Antibody; Evidence for a T cell-Dependent, Interferon-xcex3-independent Mechanism,xe2x80x9d J. Exp. Med. 171:115-127 (1990); L. M. Leal, D. W. Moss, R. Kuhn, W. Muller, and F. Y. Liew, xe2x80x9cInterleukin-4 Transgenic Mice of Resistant Background are Susceptible to Leishmania Major Infection,xe2x80x9d Eur. J. Immunol. 23:566-5690 (1993).
One unique characteristic of Leishmania infection is that the macrophage is unable to kill the parasite. In macrophages infected with Leishmania or treated with lipophosphoglycan (LPG) of promastigotes of L. donovani, impaired macrophage functions including production of IL-1xcex2 have been reported. S. J. Turco and A. Descoteaux, xe2x80x9cThe Lipophosphoglycan of Leishmania Parasites,xe2x80x9d Annu. Rev. Microbiol. 46:65-94 (1992); T. B. McNeely and S. Turco, xe2x80x9cRequirements of Lipophosphoglycan for Intracellular Survival of Leishmania donovani Within Human Monocytes,xe2x80x9d J. Immunol. 144:2745-50 (1992); S. Frankenburg, V. Leibovici, N. Mansbach, S. J. Turco, and G. Rosen, xe2x80x9cEffect of Glycolipids of Leishmania Parasites on Human Monocyte Activity,xe2x80x9d J. Immunol. 145:4284-89 (1990); S. Frankenburg, A. Gross, and V. Leibovici, xe2x80x9cLeishmania major and Leishmania donovani: Effect of LPG-containing and LPG-deficient Strains on Monocyte Chemotaxis and Chemiluminescence,xe2x80x9d Exp. Parsitol. 75:442-8 (1992); A. Descoteaux and G. Matlashewski, xe2x80x9cC-fos and Tumor Necrosis Factor Gene Expression in Leishmania donovani-infected Macrophages,xe2x80x9d Molecular Cell Biol. 9:5223-7 (1989); N. E. Reiner, W. Ng, C. B. Wilson, R. McMaster, and S. K. Burchett, xe2x80x9cModulation of in vitro Monocyte Cytokine Response to Leishmania donovani. Interferon-xcex3 Prevents Parasite-induced Inhibition of Interleukin-1 Production and Primes Monocytes to Respond to Leishmania by Producing Both Tumor Necrosis Factor-xcex1 and Interleukin-1,xe2x80x9d J. Clin. Invest. 85:1914-240 (1990). Similarly, diminished macrophage activation and/or IL-1 production have been reported to Th-2 derived cytokines such as, IL-4, IL-6, and IL-10. Essner, R. K. Rhoades, W. H. Mcbride, D. L. Morton, and J. S. Economou, xe2x80x9cIL-4 Down-regulates IL-1 and TNF Gene Expression in Human Monocytes,xe2x80x9d J. Immunol. 142:3857-61 (1989); J. L. Ho, S. H. He, M. J. C. Rios, and E. A. Wick, xe2x80x9cInterkeukin-4 Inhibits Human Macrophage Activation by Tumor Necrosis Factor, Granulocyte-macrophage Colony Stimulating Factor and Interleukin-3 for Anti-leishmania Activity and Oxidative Burst Capacity,xe2x80x9d J. Infect. Dis. 165.344-51 (1992); D. H., Hatzigeorgiou, S. H. He, J. Sobel, A. Hafner, K. Grabstein, and J. L. Ho, xe2x80x9cInterleukin-6 Down-modulates Cytokine-enhanced Antileishmanial Killing,xe2x80x9d J. Immunol. 151:3682-92 (1993); C. Bogdan, J. Paik, Y. Vodovotz, and C. Nathan, xe2x80x9cContrasting Mechanisms for Suppression of Macrophage Cytokine Release by Transforming Growth Factor-xcex3 and Interleukin-10,xe2x80x9d J. Biol. Chem. 267:23301-8 (1992). IL-1xcex2 produced by macrophages and other antigen-presenting cells mediates T-cell activation and proliferation and triggers T-cell production of IL-2. M. Luqman, L. Greenbaum, D. Lu, and K. Bottomly, xe2x80x9cDifferential Effect of Interleukin 1 on Naive and Memory CD4+ T Cells,xe2x80x9d Eur. J. Immunol. 22:95-100 (1992); P. H. Stein and A. Singer, xe2x80x9cSimilar Co-stimulation Requirements of CD4+ and CD8+ Primary T Helper Cells: Role of IL-1 and IL-6 in Inducing IL-2 Secretion and Subsequent Proliferation,xe2x80x9d Int. Immunol. 3:327-35 (1992). In addition, IL-1 plays an obligate role in the in vivo induction of activated macrophages against intracellular Listeria and activates anti-Leishmania activity in vitro,xe2x80x9d H. W. Rogers, K. C. F. Sheehan, L. M. Brunt, S. K. Dower, E. R. Unanue, and R. D. Schreiber, xe2x80x9cInterleukin 1 Participates in the Development of Anti-Listeria Response in Normal and SCID Mice,xe2x80x9d Proc. Natl. Acad. Sci. USA. 89:1011-15 (1992); D. Hatzigeorgiou, S. G. Reed, and W. D. Johnson, Jr., xe2x80x9cCytokines in the Treatment of Leishmaniasis: From Studies of Immunopathology to Patient Therapy,xe2x80x9d Biother. 7:223-35 (1994), which are hereby incorporated by reference. Therefore, inhibition of IL-1xcex2 production may be an important mechanism for evasion of CMI.
LPG, one of the most abundant surface molecules of the promastigotes but not synthesized by the amastigotes of L. donovani, plays a critical role for intramacrophage survival of promastigotes. S. J. Turco and A. Descoteaux, xe2x80x9cThe Lipophosphoglycan of Leishmania Parasites,xe2x80x9d Annu. Rev. Microbiol. 46:65-94 (1992). Although the production of IL-1xcex2 in response to LPS in human macrophages treated with LPG has been shown to be depressed, the molecular mechanisms remain undefined. S. Frankenburg, V. Leibovici, N. Mansbach, S. J. Turco, and G. Rosen, xe2x80x9cEffect of Glycolipids of Leishmania Parasites on Human Monocyte Activity,xe2x80x9d J. Immunol. 145:4284-9 (1990). Furthermore, the mechanisms reported for L. donovani-maastigote-infected human macrophages differ from those reported for murine macrophages. N. E. Reiner, xe2x80x9cParasite Accessory Cell Interaction in Murine Leishmaniasis. Evasion and Stimulus-dependent Suppression of the Macrophage Interleukin 1 Response by Leishmania donovani,xe2x80x9d J. Immunol. 138:1919-25 (1987); N. E. Reiner, W. Ng, and W. R. McMaster, xe2x80x9cParasite-accessory Cell Interactions in Murine Leishmaniasis. II. Leishmania donovani Suppress Macrophage Expression of Class I and Class II Major Histocompatibility Gene Products,xe2x80x9d J. Immunol. 138:1926-32 (1987); N. E. Reiner, W. Ng, C. B. Wilson, R. McMaster, and S. K. Burchett, xe2x80x9cModulation of in vitro Monocyte Cytokine Response to Leishmania donovani. Interferon-xcex3 Prevents Parasite-induced Inhibition of Interleukin-1 Production and Primes Monocytes to Respond to Leishmania by Producing Both Tumor Necrosis Factor-xcex1 and Interleukin-1,xe2x80x9d J. Clin. Invest. 85:1914-240 (1990).
The present invention relates to a method of treating inflammatory diseases in mammals. This process involves administering an effective amount of lipophosphoglycan or a lipophosphoglycan analogue to the mammal.
Another aspect of the present invention relates to a method of inhibiting production of adhesion molecules on endothelial cells. This process involves administering an effective amount of lipophosphoglycan to the endothelial cells.
The present invention also relates to inhibiting production of tissue factor by endothelial cells. This process involves administering an effective amount of lipophosphoglycan or lipophosphoglycan analogue to the endothelial cells.
A method of inhibiting induction of nitric oxide synthase by macrophages is also disclosed. This involves administering an effective amount of lipophosphoglycan or lipophosphoglycan analogue to macrophages.
A method of reversing the inhibitory effects of lipophosphoglycan on endothelial cells or macrophages is also disclosed. Here, an effective amount of lipophosphoglycan analogues are administered to endothelial cells or macrophages which are being contacted with lipophosphoglycan.
The present invention also relates to a method of targeting material to endothelial cells, fibroblasts, or monocytes. This involves administering lipophosphoglycan or lipophosphoglycan analogues to endothelial cells, fibroblasts, or monocytes. A product for such targeting is also disclosed.
Another aspect of the present invention relates to an isolated DNA molecule suitable for connection to a gene capable of transcription. Lipophosphoglycan or lipophosphoglycan analogues bind to the DNA molecule or trigger nuclear protein(s) binding to the DNA molecule.
Such binding antagonizes transcription of the gene. The DNA molecule, when positioned to regulate transcription of the gene, can be used to carry out a method of testing drugs for inhibiting production of tissue factor, nitric oxide synthase, proinflammatory cytokines, or adhesion molecules.

Methods and compounds for treating autoimmune and vascular disease


In an open integration framework of a computerized cybersecurity incident management software platform, integrations are defined at an action level for integrating cybersecurity products for performing desired actions into the cybersecurity incident management software platform. High-level parameters of an integration are defined through an integration definition file. The integration definition file identifies a cybersecurity product to be called through an application program interface. One or more actions of the integration are defined through one or more respective action definition files that define details of the one or more actions. The action definition files identify the integration defined by the integration definition file, and the actions requiring use of the cybersecurity product through the application program interface.

Cybersecurity incident management platforms typically permit users to call application programming interfaces (APIs) associated with external providers as part of the process of performing desired actions within the platform. Frequently, very large integration files are created that call multiple APIs in order to provide the necessary code for integrating cybersecurity products for performing desired actions into a computerized cybersecurity incident management system.
One incident management system, into which the embodiments described herein may be incorporated as an open integration framework, is the DF Labs IncMan Suite, which is an incident management system that enables management of many kinds of information security incidents. The IncMan Suite supports the entire incident management process for every type of incident, including cybersecurity incidents, by supporting digital forensics, case management, and incident response.
Previous patent applications having at least one inventor in common with the present application, pertaining to cybersecurity incident management systems and digital evidence control systems, include U.S. patent application Ser. No. 11/784,794, filed Apr. 10, 2007 and published as U.S. Patent Publication 2008/0098219; U.S. patent application Ser. No. 14/521,328, filed Oct. 22, 2014 and issued as U.S. Pat. No. 10,412,117; and U.S. patent application Ser. No. 15/620,439, filed Jun. 12, 2017 and issued as U.S. Pat. No. 10,439,884. The entire disclosure of these previous patent applications naming at least one inventor of the present application are hereby incorporated herein by reference. It is contemplated that the system described herein may be used in connection with cybersecurity incident management, response, and security operation systems employing the subject matter described in the above-referenced previous patent applications by the inventor.

Open integration framework for cybersecurity incident management software platform


A gas detector for detecting the presence of a light absorbing gas within an atmosphere (10) containing the gas includes a light source (12), a detector (14) arranged to detect a presence of incident radiation from the light source (12) and to provide an output signal (46) representative of the level of incident radiation from the light source (12). Electronic circuitry (130) is arranged to process the output signal (46) to provide an indication of the incident radiation. A power supply (40, 36) for cyclically energizing the light source (12) is also provided. The power supply is arranged to deliver substantially constant power at the or each level of energization of the light source (12).

The presence of hydrocarbon gas in air is conventionally monitored by beaming infra-red radiation through a chamber containing the gas-air mixture and detecting for absorption, or the degree of absorption, of radiation within the chamber. An output signal is derived which provides a measure of the amount of infra-red radiation that impinges on a detector, with an increase in the level of the output signal signifying a reduction in the amount of infra-red absorbing gas within the chamber. A bandpass filter is normally located between the radiation source and the detector to permit selective detection of the presence of a specific gas, that is a gas which absorbs radiation having a frequency in the filter pass band.
Determination of the volumetric proportion of hydrocarbon gas in air is determined by comparing a measured level of the output signal with a reference level, whilst accommodating variables introduced by ambient temperature change, component heat contributions, drifting of source and detector sensitivity, and accumulation of pollutants on optical elements within the system. One of the steps taken toward accommodating variables has involved driving the infra-red source by a square wave voltage, typically at a rate in the range of 0.5 to 50 Hz, and thermal drifts have been accommodated by measuring the peak-to-peak value of the output signal.

Apparatus for detecting the presence of a light absorbing gas within an atmosphere containing the gas


A shoe for a bar code wand consists of an upper cylindrical portion having a through hole for receiving and frictionally engaging a portion of the scanning head of the wand, a downwardly sloping inwardly converging shoulder located within the hole near the bottom of the cylindrical portion serving to limit the extent of penetration of the wand into the hole, and a pair of parallel opposing contact arms extending downward from the bottom of the cylindrical portion, for providing a predetermined gap between the reading tip of the wand and a bar code label. The ends of the contact arms are radiused to permit angular movement within a range of the wand from perpendicular orientation with a bar code label being read by moving the assembly of the wand and shoe across the label, while maintaining the desired gap.

Bar coded labels have been used for many years for providing coding of goods to convey desired information, such as the contents of a container, the price of the goods, origin of the goods, and so forth. A variety of equipment has been developed for reading bar code labels. An inexpensive bar code reader is provided by bar code wands. Typically, such wands have a pencil-shaped holder for housing associated electronics, illumination and light detector devices. The tip of such a wand is typically provided by a rounded jewel element. In use, the wand is positioned for wiping the jewel tip across the bar code label, for detecting the bar code as a sequence of electrical signals, for processing. Bar code labels that are repeatedly read vary in their resistance to contact damage from the jewel tip of the bar code wands. In certain applications, the environment in which a bar code label is to be used may restrict the selection of label material to materials that are subject to damage from repeated contact scanning via a bar code wand. Ceramic labels must be used in applications exposing a bar code label to high temperatures. Although ceramic labels are useful in such high temperature applications, and can withstand any outgasing in the environment, such labels are prohibitively expensive. Attempts to use metal labels in such applications, and even in less demanding applications, have shown that such labels sustain damage to the bar code printing thereon from repeated bar code wand scans by contact with the jewel tipped heads of such wands.
Non-contact beam scanners have been developed for overcoming the problems associated with contact bar code wands in reading bar coded labels. However, such scanners as laser beam scanners, typically cost more than ten times the cost of bar code wands. Accordingly, the high cost of such laser beam scanners tends to reduce the overall economies obtained from being able to use metal bar code labels without damage by repeated scans via non-contact beam scanners. Such non-contact laser beam scanners are disclosed in Shepard et al. U.S. Pat. Nos. 4,460,120; 4,736,095; 4,845,350, respectively, for example.
Other attempts have been made in the art to provide devices for protecting bar code labels. For example, Bianco U.S. Pat. No. 4,263,503, shows the use of a plate mounted over a bar code label or bar coded area on an object, with the plate having an elongated slot therethrough for exposing a sufficient portion of the bar code. The width of the slot permits a bar code wand to be wiped across the slot without touching the label, but in close enough contact to the label for reading the bar code.
Milbrett U.S. Pat. No. 4,833,306, shows another device for protecting bar code labels or tags. In this patent, a bar code tag is encapsulated beneath a transparent window of a bar code carrier attached to an associated object. In this manner, the bar code tag is protected from harsh chemical environments, but can still be read through the transparent cover by an associated bar code reader.
Sanner U.S. Pat. No. 4,288,690, shows an optical character reader consisting of a hand-held scan head 10, that is provided with a detachable illuminator 12. The illuminator 12 includes a pair of opposing light bulbs mounted in a top portion thereof on either side of an open slot 12b. The light from the light bulbs is reflected along interior downward converging side portions to exit from a truncated tip portion of the illuminator 12. A notch is cut through the tip for permitting a user to more easily position the scanner 10 over characters to be read by moving the scanner along a row of such characters. The light from the illuminator 12 is reflected back from the characters through the topmost central slot of the illuminator 12, to focusing lenses 17, for focusing the detected light upon a light sensor array 16.
The present inventor recognized the need for a relatively inexpensive device for permitting typical bar code wands to be used for reading bar codes on metal labels, for example, without damaging the bar code label. The present inventor further recognized that such a device must be very inexpensive, and adaptable for use with a variety of standard bar code wands.


A tool includes a handle and a blade. The handle extends from a handle first end to a handle second end. The blade has a first surface and an opposed second surface and defines a cutting edge between the first surface and the second surface. The blade extends from a blade first end to a blade second end. The blade and the handle are rotatably coupled at the blade first end and the handle first end about an axis extending from the first surface of the blade to the second surface of the blade. The blade is rotatable from a first position to a second position. The blade is lockable in the first position. When in the first position, the blade extends out from the handle second end.

Various tools are known for clearing brush and trimming trees, bushes, and other objects. One such tool is a machete. Machetes typically include a broad blade and a handle and are used to clear undergrowth. Shears are another common tool used for cutting objects. Shears include cutting blades that are operated in a scissor-like fashion to cut branches or stems. Additionally, removable and/or disposable saw blades are known for cutting various materials.


A main surface of a semiconductor substrate having the aspect ratio of 1:2 is equally divided into 9 regions of 3 rows and 3 columns, and a 2.sup.N-2 -bit subarray portion having the aspect ratio of 1:2 is arranged in each region other than a central region. The central region is provided with control circuitry and pads. Thus, a DRAM chip having the aspect ratio of 1:2 and the storage capacity of 2.sup.2N+1 bits can be formed. The DRAM chip can be contained at a high effective ratio in a package having the aspect ratio of 1:2 as is conventional.

1. Field of the Invention
The present invention relates to a semiconductor memory device and more particularly to a semiconductor memory device having a storage capacity of 2.sup.2N+1 bits.
2. Description of the Background Art
FIG. 7 is a block diagram showing the structure of a conventional dynamic random access memory (hereinafter referred to as a DRAM). Referring to FIG. 7, the DRAM includes a clock generation circuit 31, a row and column address buffer 32, a row decoder 33, a column decoder 34, a memory mat 35, an input buffer 38 and an output buffer 39. Memory mat 35 includes a memory array 36 and a sense amplifier+input/output control circuit 37.
Clock generation circuit 31 selects a prescribed operation mode in accordance with externally applied control signals /RAS, /CAS, /W, and controls the entire DRAM.
Row and column address buffer 32 generates a row address signal RA0-RAi and a column address signal CA0-CAi in accordance with an externally applied address signal A0-Ai (i is an integer of at least 0), and applies generated signals RA0-RAi and CA0-CAi to row decoder 33 and column decoder 34, respectively.
Memory array 36 includes a plurality of memory cells each storing 1-bit data. Each memory cell is arranged at a prescribed address determined by row and column addresses.
Row decoder 33 designates a row address in memory array 36 in response to row address signal RA0-RAi applied from row and column address buffer 32. Column decoder 34 designates a column address in memory array 36 in response to column address signal CA0-CAi applied from row and column address buffer 32.
Sense amplifier+input/output control circuit 37 connects the memory cell at the address which is designated by row decoders 33 and column decoder 34 to one end of a global data input/output line pair GIO. The other end of global data input/output line pair GIO is connected to input buffer 38 and output buffer 39. In the write mode, input buffer 38 applies, in response to control signal /W, data Dj which is externally received (j is an integer of at least 0) to a selected memory cell through global data input/output line pair GIO. In the read mode, output buffer 39 outputs, in response to a control signal /OE which is externally received, read data Dj from a selected memory cell to the outside.
FIG. 8 shows a chip layout of the DRAM shown in FIG. 7. Referring to FIG. 8, memory mat 35 is generally arranged in a rectangular region. Memory array 36 is divided into a plurality of memory array blocks MA0-MAn (n is an integer of at least 0), and sense amplifier+input/output control circuit 37 is divided into a plurality of sense amplifier bands SA0-SAn+1. Memory array blocks MA0-MAn and sense amplifier bands SA0-SAn+1 are arranged in the rectangular region in the direction of its longer side, with memory array blocks MA0-MAn each arranged between sense amplifier bands SA0-SAn+1.
Row decoder 33 is arranged along one longer side of rectangular memory mat 35, and column decoder 34 is arranged along one shorter side of memory mat 35. Memory mat 35, row decoder 33 and column decoder 34 constitute an array portion 40. Control circuitry other than array portion 40, that is, clock generation circuit 31, row and column address buffer 32, input buffer 38 and output buffer 39, and pads for receiving and outputting control signals /RAS, /CAS, /W, /OE, address signal A0-Ai, data signal D0-Dj or the like are arranged in the periphery of array portion 40.
FIG. 9 illustrates part of memory array block MAn shown in FIG. 8. Referring to FIG. 9, memory array block MAn includes a plurality of memory cells MC arranged in a matrix, a word line WL provided corresponding to each row, and a bit line pair BL, /BL provided corresponding to each column. One memory cell MC is arranged at one of the two crossings of two bit lines BL, /BL and one word line WL which orthogonally crosses them.
As shown in FIG. 10, each memory cell MC includes an N channel MOS transistor Q for accessing and a capacitor C for storing information. N channel MOS transistor Q and capacitor C are connected in series between corresponding bit line BL or /BL and the line of a cell potential Vcp, and the gate of N channel MOS transistor Q is connected to corresponding word line WL.
As shown in FIG. 10, sense amplifier band SAn includes transfer gates 41, 57, a column selection gate 44, a sense amplifier 47 and an equalizer 53 which are provided corresponding to each odd column of memory array block MAn. Transfer gates 41, 57, column selection gate 44, sense amplifier 47 and equalizer 53 for each even column of memory array block MAn are provided in sense amplifier band SAn+1.
Transfer gate 41 includes N channel MOS transistors 42, 43. N channel MOS transistors 42, 43 are connected between input/output nodes N1, N2 of sense amplifier 47 and corresponding bit lines BL, /BL, respectively. Their gates receive a block selection signal BLIR.
Transfer gate 57 includes N channel MOS transistors 58, 59. N channel MOS transistors 58, 59 are connected between input/output nodes N1, N2 and corresponding bit lines BL, /BL, respectively. Their gates receive a block selection signal BLIL.
The circuit in sense amplifier band SAn is shared by two memory array blocks MAn-1, MAn on the both sides of sense amplifier band SAn. When memory array block MAn-1 is selected, signal BLIR is at the L level to cut off transfer gate 41. When memory array block MAn is selected, signal BLIL is at the L level to cut off transfer gate 57.
Column selection gate 44 includes N channel MOS transistors 45, 46 which are connected between input/output nodes N1, N2 and data input/output lines IO, /IO, respectively. The gates of N channel MOS transistors 45, 46 are connected to column decoder 34 through a column selection line CSL. When the potential of column selection line CSL is raised to the H level selected state by column decoder 34, N channel MOS transistors 45, 46 are rendered conductive, connecting input/output nodes N1, N2, that is, bit line pair BL, /BL of memory array block MAn-1 or MAn to data input/output line pair IO, /IO. The other end of data input/output line pair IO, /IO is connected to one end of global data input/output line pair GIO through a block selection switch, not shown.
Sense amplifier 47 includes P channel MOS transistors 48, 49 connected between each one of input/output nodes N1, N2 and a node N3, and N channel MOS transistors 51, 52 connected between each one of input/output nodes N1, N2 and a node N4. The gates of MOS transistors 48, 51 are both connected to node N2, and the gates of MOS transistors 49, 52 are both connected to node N1. Nodes N3, N4 receive sense amplifier activation signals SE, /SE, respectively. When sense amplifier activation signals SE, /SE attain the H and L levels, respectively, sense amplifier 47 amplifies, to a power supply voltage Vcc, a slight potential difference between nodes N1, N2, that is, between bit lines BL, /BL of memory array block MAn-1 or MAn, in response.
Equalizer 53 includes an N channel MOS transistor 54 connected between input/output nodes N1, N2, and N channel MOS transistors 55, 56 connected between each one of input/output nodes N1, N2 and a node N6. The gates of N channel MOS transistors 54-56 are all connected to a node N5. Node N5 receives a bit line equalize signal BLEQ, and node N6 receives a precharge potential VBL (=Vcc/2). When bit line equalize signal BLEQ attains the H level active state, equalizer 53 equalizes, to precharge potential VBL, a potential difference between nodes N1, N2, that is, a potential difference between bit lines BL, /BL of memory array block MAn-1 or MAn, in response. Here, signals BLIR, BLIL, SE, /SE, BLEQ and precharge potential VBL are supplied from clock generation circuit 31 in FIG. 7.
The operation of the DRAM shown in FIGS. 7-10 will be briefly described below. At the time of standby, signals BLIR, BLIL, BLEQ are all at the H level and signals SE, /SE are both at the intermediate level (Vcc/2), so that bit lines BL, /BL have been equalized to precharge potential VBL. Further, word line WL and column selection line CSL are at the L level non-selected state.
In the write mode, bit line equalize signal BLEQ is first lowered to the L level, stopping equalization of bit lines BL, /BL. Then, row decoder 33 selects memory array block MAn, for example, in response to the row address signal, and drives signals BLIR, BLIL to the L and H levels, respectively, connecting memory array block MAn and sense amplifier bands SAn, SAn+1. Further, row decoder 33 raises the potential of word line WL of a row corresponding to the row address signal to the H level selected state, rendering conductive N channel MOS transistor Q of memory cell MC of that row.
Then, column decoder 34 raises the potential of column selection line CSL of a column corresponding to the column address signal to the H level active state, rendering column selection gate 44 conductive. Externally applied write data Dj is supplied through input buffer 38, global data input/output line pair GIO and data input/output line pair IO, /IO to bit line pair BL, /BL of a selected column. Write data Dj is applied as a potential difference between bit lines BL, /BL. Capacitor C of a selected memory cell MC stores electric charges of the amount corresponding to the potential of bit line BL or /BL.
In the read mode, bit line equalize signal BLEQ is first lowered to the L level, stopping equalization of bit lines BL, /BL. Similarly to the write mode, row decoder 33 selects memory array block MAn, for example, connecting memory array block MAn and sense amplifier bands SAn, SAn+1 and raising the potential of word line WL of a row corresponding to the row address signal to the H level selected state. The potentials of bit lines BL, /BL are slightly changed in accordance with the amount of electric charges of capacitor C in the activated memory cell MC.
Then, sense amplifier activation signals SE, /SE attain the H and L levels, respectively, and sense amplifier 47 is activated. When the potential of bit line BL is slightly higher than the potential of bit line /BL, the resistance values of MOS transistors 48, 52 become lower than the resistance values of MOS transistors 49, 51. Thus, the potential of bit line BL is raised to the H level and the potential of bit line /BL is lowered to the L level. On the contrary, when the potential of bit line /BL is slightly higher than the potential of bit line BL, the resistance values of MOS transistors 49, 51 become lower than the resistance values of MOS transistors 48, 52. Thus, the potential of bit line /BL is raised to the H level and the potential of bit line BL is lowered to the L level.
Then, column decoder 34 raises the potential of column selection line CSL of a column corresponding to the column address signal to the H level selected state, rendering conductive column selection gate 44 of that column. Data Dj of bit line pair BL, /BL of the selected column is externally output through column selection gate 44, data input/output line pair IO, /IO, global data input/output line pair GIO and output buffer 39.
Now, the storage capacity of such a DRAM has increased for each generation. Specifically, the storage capacity of the DRAM has increased four times in each generation, starting from 16 K bits to 64K, to 256K, to 1M, to 4M, to 16M, and to 64M bits. Since 1K=2.sup.10, the storage capacity of the DRAM is 16K=2.sup.14, 64K=2.sup.16, 256K=2.sup.18, 1M=.sup.20, 4M=2.sup.22, 16M=2.sup.24 or 64M=2.sup.26 bits. In short, the storage capacity is 2.sup.2N bits (N is a natural number).
As shown in FIG. 9, in the DRAM, one memory cell MC is arranged at one of the two crossings of two bit lines BL, /BL and one word line WL which orthogonally crosses them. Since the pitch of bit lines BL, /BL is almost the same as the pitch of word lines WL, the basic unit of memory cell MC has the aspect ratio of approximately 1:2 (longitudinal to lateral).
Thus, the storage capacity of the DRAM is 2.sup.2N bits and the basic unit of a memory cell has the aspect ratio of 1:2. When the area of a square which is half of the basic unit of the memory cell is S, the area of 2S.times.2.sup.2N =S.times.2.sup.2N+1 in the entire DRAM is occupied by memory cells MC. In order to arrange the 2.sup.2N+1 squares, conventionally, 2.sup.N squares are arranged longitudinally (or laterally) and 2.sup.N+1 squares are arranged laterally (or longitudinally) so that the entire DRAM chip has the aspect ratio of approximately 2:1. There have been various methods for arranging in this manner.
As one method, as shown in FIG. 11A, an array portion 40 consisting of 2.sup.N .times.2.sup.N+1 (longitudinal.times.lateral) squares each having the area of S is arranged at the center of a rectangular semiconductor substrate 60, and control circuitry 61 and pads 62 are distributed around array portion 40.
The method was also described with respect to FIG. 8. In FIG. 8, array portion 40 includes not only memory array blocks MA0-MAn but sense amplifier bands SA0-SAn+l, row decoder 33 and column decoder 34. However, almost all the area of array portion 40 is occupied by memory array blocks MA0-MAn, that is, memory cells MC.
As another method, as shown in FIG. 11B, array portion 40 is equally divided into four subarray portions 63 each consisting of 2.sup.N-1 .times.2.sup.N (longitudinal.times.lateral) squares, the four subarray portions 63 are arranged at the four corners of semiconductor substrate 60, and control circuitry 61 and pads 62 are distributed in the cross-shaped region defined by four subarray portions 63 therebetween. Dividing array portion 40 into a plurality of subarray portions can achieve higher operation speed, lower power consumption and so on.
As still another method, as shown in FIG. 11C, each one of four subarray portions 63 shown in FIG. 11B is divided into four subarray portions 64 each consisting of 2.sup.N-2 .times.2.sup.N-1 (longitudinal.times.lateral) squares with the area S.
As another attempt, as shown in FIG. 11D, each one of four subarray portions 63 shown in FIG. 11B is divided into four subarray portions 65 each consisting of 2.sup.N-1 .times.2.sup.N-2 (longitudinal.times.lateral) squares with the area of S.
In all of these methods, one or an even number of array portions 30 or subarray portions 63-65 are arranged longitudinally and laterally.
Since pads 62 and control circuitry 61 are distributed in the entire periphery of semiconductor substrate 60 or in the entire region which transverses longitudinally and laterally the center of semiconductor substrate 60, the longitudinal and lateral sizes of the DRAM chip are the sum of the size of array portion 40 (or subarray portions 63-65) and the sizes of pads 62 and control circuitry 61.
So far, the storage capacity of the DRAM has been 2.sup.2N bits. However, since there is no particular reason for limiting the storage capacity to 2.sup.2N bits, a DRAM of 2.sup.2N+1 bits may be supplied according to the market demand. If so, the entire memory cell has the area of S.times.2.sup.2N+. Therefore, if one or an even number of subarray portions are arranged longitudinally and laterally as is conventional, the aspect ratio of the DRAM chip comes to be 1:1 or 1:4 as shown in FIGS. 12A-12C. The aspect ratio of 1:2 cannot be achieved.
If four subarray portions 71 each consisting of 2.sup.N+1 .times.2.sup.N+1 squares with the area S are arranged at the four corners of semiconductor substrate 70, and control circuitry 61 and pads 62 are distributed among four subarray portions 71, the aspect ratio of the DRAM chip is 1:1.
As shown in FIG. 12B, even if each one of four subarray portions 71 is divided into two subarray portions 72 each consisting of 2.sup.N+1 .times.2.sup.N squares, the aspect ratio of the DRAM chip is 1:1.
As shown in FIG. 12C, if eight subarray portions 72 shown in FIG. 12B are arranged in one row, and control circuitry 61 and pads 62 are distributed around them, the aspect ratio of the DRAM chip is 1:4.
Since a DRAM chip has been enclosed in a rectangular package having the aspect ratio of approximately 1:2 for commercialization, a chip needs to be enclosed in the rectangular package having the aspect ratio of approximately 1:2 even if a DRAM chip of 2.sup.2N+1 bits is to be commercialized. By the methods of arrangement shown in FIGS. 12A-12C, however, the effective ratio of the chip area to the package area is about 50%, undesirably resulting in a larger package size.
For enclosing the DRAM chip in a smaller package, it is not preferred that the longitudinal and lateral sizes of the chip are the sum of the sizes of the array portion or subarray portions, pads 62 and control circuitry 61.
Accordingly, a main object of the present invention is to provide a semiconductor memory device which can be contained at a high effective ratio in a package having the aspect ratio of 1:2 and in which the longitudinal and lateral sizes of a chip are determined only by the size of a memory array.
According to an aspect of a semiconductor memory device of the present invention, a main surface of a rectangular semiconductor substrate is equally divided into 9 regions of 3 rows and 3 columns, and a memory array having the aspect ratio of 1:2 and the storage capacity of 2.sup.2N-2 bits is provided in each region other than a central region. Therefore, a memory chip having the aspect ratio of 1:2 and the storage capacity of 2.sup.2N+1 bits can be formed, and as is conventional, it can be contained at a high effective ratio in a package having the aspect ratio of 1:2. Further, by arranging control circuitry or the like in the central region of the semiconductor substrate, a smaller chip can be obtained without a possibility that the dimensions of control circuitry or the like influence, as is conventional, the longitudinal and lateral sizes of the chip.
Preferably, each memory array is divided into a plurality of subarray portions. Therefore, higher operation speed and lower power consumption can be achieved.
Preferably, control circuitry are formed at the center of the central region of the semiconductor substrate, and pads are provided in a periphery of the central region. Therefore, the control circuitry and the pads can be arranged compactly.
The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.

Semiconductor memory device having storage capacity of 2.sup.2N+1 bits


A method, apparatus, and computer program product are provided for determining a network interface to network resource. An apparatus may comprise a processor configured to receive a request for resolution of a domain name. The processor may be further configured to access maintained domain name suffix information. The maintained domain name suffix information may comprise a plurality of domain name suffix entries. The processor may additionally be configured to search the maintained domain name suffix information for one or more domain name suffix entries corresponding to the domain name to determine one or more network interfaces through which the domain name is accessible. The processor may also be configured to select a network interface for resolving the domain name into a network address from the one or more determined network interfaces.

The modern communications era has brought about a tremendous expansion of wireline and wireless networks. Computer networks, television networks, and telephony networks are experiencing an unprecedented technological expansion, fueled by consumer demand. Wireless and mobile networking technologies have addressed related consumer demands, while providing more flexibility and immediacy of information transfer.
Current and future networking technologies as well as evolved computing devices making use of networking technologies continue to facilitate ease of information transfer and convenience to users. Many computing devices are now configured to access network resources, such as, for example, web pages, over a plurality of available network interfaces. These network interfaces may include, for example, cellular network interface, a wired Ethernet interface, a wireless local access network interface, a virtual private network tunnel interface, and/or the like. These available network interfaces may interface with wireline or wireless networks.
Some network resources, however, may not be accessible through each available network interface. Moreover, even if a network resource is available through multiple available network interfaces, one available network interface may be better for accessing the network resource than others. Unfortunately, applications, such as web browsers, used to access network resources and/or applications used to control access to network resources by other applications, such as various operating system components, may not be configured to determine an appropriate network interface for use to access a network resource. These applications may be configured to only use a predefined network interface or may otherwise be configured to blindly cycle through available network interfaces. Some applications may require user intervention to switch a default network interface. However, this is undesirable from a usability point of view as not only does it impose a burden on the user, but the user may not know which network interface to use.
Accordingly, it may be advantageous to provide computing device users with methods, apparatuses, and computer program products for determining a network interface to access a network resource.

Methods, appratuses, and computer program products for determining a network interface to access a network resource


The public-key encryption method uses the sender-side apparatus by the creator of a ciphertest and creates the ciphertext of a plaintext x (ε{0, 1}n), in y1=f(x0k1G(r)), y2=H(x0k1G(r))r with respect to the published trapdoor-equipped unidirectional function f and the random functions G, H. Meanwhile, the receiver of the ciphertext, who has received the ciphertext by the receiver-side apparatus via the communications line, performs the decryption processing with the use of f−1, i.e., the secret key, in accordance with the steps inverse to those of the encryption processing.

The present invention relates to a cipher communication method using a public-key encryption scheme and being provable to be semantically-secure against an adaptive chosen-ciphertext attack.
Up to the present, a variety of public-key encryption methods have been proposed. Among them, an encryption method published in a literature 1: "R. L. Rivest, A. Shamir, L. Adleman: A Method for Obtaining Digital Signatures and Public-Key Cryptosystems, Commun. of the ACM, Vol. 21, No. 2, pp. 120-126, (1978)" is the most famous and the most put-into-practical-use public-key encryption scheme. As another encryption method, a method using elliptic curves described in the following literatures has been known as an efficient public key encryption scheme: A literature 2: "V. S. Miller: Use of Elliptic Curves in Cryptography, Proc. of Crypto' 85, LNCS218, Springer-Verlag, pp. 417-426, (1985)", a literature 3: "N. Koblitz: Elliptic Curve Cryptosystems, Math. Comp., 48, 177, pp. 203-209, (1987)", and so on.
As encryption methods that are provable about the security, at first, as the methods with a chosen-plaintext attack set as their object, the following have been known: A method described in a literature 4: "M. O. Rabin: Digital Signatures and Public-Key Encryptions as Intractable as Factorization, MIT, Technical Report, MIT/LCS/TR-212 (1979)", a method described in a literature 5: "T. E L Gamel: A Public Key Cryptosystem and a Signature Scheme Based on Discrete Logarithms, IEEE, Trans. On Information Theory, IT-31, 4, pp. 469-472, (1985)", a method described in a literature 6: "S. Goldwasser and S. Micali: Probabilistic Encryption, JCSS, 28, 2, pp. 270-299, (1984)", a method described in a literature 7: "M. Blum and S. Goldwasser: An Efficient Probabilistic Public-Key Encryption Scheme which Hides All Partial Information, Proc. of Crypto' 84, LNCS196, Springer-Verlag, pp. 289-299, (1985)", a method described in a literature 8: "S. Goldwasser and M. Bellare: Lecture Notes on Cryptography, http:/www-cse.ucsd.edu/users/mihir/ (1997)", a method described in a literature 9: "T. Okamoto and S. Uchiyama: A New Public-Key Cryptosystem as Secure as Factoring, Proc. of Eurocrypto' 98, LNCS1403, Springer-Verlag, pp. 308-318, (1998)", and so on.
Also, as encryption methods that are provable about the security against the chosen-ciphertext attack, the following have been known: A method described in a literature 10: "D. Dolve, C. Dwork, and M. Naor: Non-Malleable Cryptography, In 23rd Annual ACM Symposium on Theory of Computing, pp. 542-552, (1991)", a method described in a literature 11: "M. Naor and M. Yung: Public-Key Cryptosystems Non-malleable against Chosen Ciphertext Attacks, Proc. of STOC, ACM Press, pp. 427-437, (1990)", a method described in a literature 12: "R. Cramer and V. Shoup: A Practical Public-Key Cryptosystem Non-malleable against Adaptive Chosen Ciphertext Attack, Proc. of Crypto' 98, LNCS1462, Springer-Verlag, pp. 13-25, (1998)", and so on.
Also, in a literature 13: "M. Bellare, A. Desai, D. Pointcheval, and P. Rogaway: Relations Among Notions of Security for Public-Key Encryption Schemes, Proc. of Crypto' 98, LNCS1462, Springer-Verlag, pp. 26-45, (1998)", the equivalence between IND-CCA2 (i.e., being semantically-secure against the adaptive chosen-ciphertext attack) and NM-CCA2 (i.e., being non-malleable against the adaptive chosen-ciphertext attack) has been demonstrated. Accordingly, at present, the public key encryption scheme satisfying this condition is considered as the most secure cypher.
An encryption method described in a literature 14: "M. Bellare and P. Rogaway: Optimal Asymmetric Encryption How to Encrypt with RSA, Proc. of Eurocrypto' 94, LNCS950, Springer-Verlag, pp. 92-111, (1994)" has been considered as semantically-secure against the adaptive chosen-ciphertext attack on the premise of the difficulty in calculating the inverse function of a one-way trapdoor permutation. In recent years, however, in a literature 15: "V. Shoup: OAEP Reconsidered. Available on the e-print library (2000/060), November 2000", a problem and the fact that the proof of the security is insufficient from a general viewpoint have been pointed out, and the solving methods therefor have been also proposed.
Meanwhile, in a cipher communication, in many cases, transmission data is encrypted using a common-key cypher, and the secret key to the common-key cypher used for the data encryption at that time is encrypted using a public key encryption scheme. One reason for this is that the length of a plaintext that can be encryption-processed at one time using the public-key encryption methods described in the above-described respective literatures is short, and is limited in proportion to the key length. For example, in the encryption method described in the literature 1, if the key length is 1024 bits, the plaintext is, at the most, 1024 bits. Moreover, in the encryption method described in the literature 3, if the base p is 160 bits, the information that can be transmitted at the one-time encryption is 160 bits.
In the practical systems, however, there are many cases where, in addition to the common key, the identification information (i.e., the ID information) of the user is also sent together therewith. Also, in accompaniment with the advancement of the computers' capabilities, the key length to be transmitted is now getting longer and longer. On account of this, there occurs a necessity for performing the encryption in a manner of being divided into a plurality of times. In the case of dividing the encryption into the plurality of times, there occurs a necessity for guaranteeing the validity of the correspondences among the respective ciphertexts. This necessitates much extra time and labor.
From the situation like this, expectations are concentrated on an encryption method which allows a longer plaintext to be encrypted at one time and whose security against the attack is provable.
Also, the literature 4 has proved that the encryption method described in the literature 4 is unidirectional against the chosen-plaintext attack. This, however, means that the encryption method is weak against the chosen-ciphertext attack. Also, although the encryption method in the literature 4 is superior in the high-speed performance in the encryption processing, the method could not be expected to implement a high-speed decryption processing.

This patent is subject to a terminal disclaimer.

Method of a public key encryption and a cypher communication both secure against a chosen-ciphertext attack


Flow control of packet based traffic by window is known. Novel modification is described which causes the flow control mechanism to reduce sending rate to some configured number rather than just reducing it by a fixed amount such as one half. The description also shows how the flow control mechanism can be constrained to a maximum rate. The configured numbers will assure that the connection can always run at a minimum rate but not more than a maximum rate. If the guaranteed minimum bandwidth is known and the round trip time between the end points is known or has been calculated, then the sender node needs only reduce its window to that which corresponds to a sending rate equal to that configured number. In this way the protocol will still probe for extra, opportunistic bandwidth but will be able to maintain the minimum rate. In a similar way a window that corresponds to the maximum rate can be calculated and used to constrain the maximum rate of sending.

The invention resides generally in the field of digital data transmission through a network. In particular, it relates to an apparatus for and method of transmitting digital data in streams of packets while observing guaranteed minimum and/or maximum bandwidth allocations.
In contrast to circuit based transport systems, a packet based transport system allows the access bandwidth to be dynamically allocated. Remote nodes can be represented as logical ports but there is no commitment of bandwidth when this is not needed. The physical access link is fully available for traffic to any destination. In a packet transport system, virtual pipes are provided between any two transport access points. These pipes may be guaranteed some minimum rate of transmission but certainly it is required that an access point can make opportunistic use of spare bandwidth up to some maximum amount. Frame relay as a packet based transport allows more efficient use of bandwidth by permitting statistical multiplexing of data streams, thus allowing it to exploit unused bandwidth. However, there is no mechanism (protocol) to ensure reliable delivery of the frames and under congestion conditions frames are discarded and the higher layer protocols must compensate for the loss. The discard of frames is not sensitive to the impact on the higher layer protocols and the frame flows do not directly adapt to the network conditions. ATM with an effective flow control can provide a lossless but dynamic transport. However, it relies on some reasonable level of complexity at the transport switching points to achieve the flow control, the effectiveness of which has not yet been proven in the field. ATM without flow control requires that cells be discarded under congestion conditions and this discard should be aware of packet boundaries and the impact on the higher layer protocol such as TCP protocol. These issues are just beginning to be understood.
It is commonly understood in the field of the present invention that a layer under the networking layer is called xe2x80x9ctransportxe2x80x9d layer and provides pipes between networking layer nodes. This is in contrast to the layered model of the OSI (open systems interconnect) in which the transport layer resides upon the network layer, which in turn sits on top of the data link layer. The data link layer provides similar functionalities to those of the transport layer of the present description. Throughout the specification, the former designation is used.
Therefore in the TCP/IP model, IP layer resides under TCP layer. The IP layer is the network layer in which IP (Internet protocol) runs. An internetwork differs from a single network, because different parts may have wildly different topologies, bandwidth, delays, packet sizes, and other parameters. The TCP layer is the transfer layer in which the TCP (transmission control protocol) runs. The TCP has been used for ensuring reliable transfer of byte stream data between two end points over an internetwork, which may be less reliable. TCP allows a shared and adaptive use of available bandwidth of a transmission link between two end points. It does this by having the sender gradually increase the rate of sending until a packet is lost whereupon it reduces its rate significantly and repeats the gradual increase. Thus, TCP tends to give connections their proportional share of the available bandwidth on a link although different connection characteristics can cause large variations in the sharing.
In Internet terminology, aggregating traffic streams by encapsulating them into a single IP stream is often called tunneling. Applicant""s copending patent application Ser. No. 09/066,888 filed on Apr. 28, 1998 describes an invention, which re-uses TCP in a packet based transport to provide TCP tunneling which can conveniently be called xe2x80x9cTCP trunkingxe2x80x9d. The use of TCP provides for reliable delivery of data between two transport access points while permitting that transport to offer elasticity and bandwidth sharing. Aggregating traffic streams into TCP tunnels reduces the size of buffers and tables in the transport switches. TCP is well suited to the use of first-in-first-out queues and allows simple implementations at the switching nodes. TCP is also inherently provides for re-sequencing of out-of-order packets which can occur when switching nodes spread load over multiple links.
It is expected that in future networks, particularly those using TCP trunking between aggregation points, it will be required to assure a minimum sending rate for the connection while still allowing the connection to probe for more throughput if it is available. This opportunistic acquisition of bandwidth might be limited to some maximum. TCP currently has no capability to support a guaranteed minimum bandwidth or a maximum permitted bandwidth but this will be essential as IP networks introduce virtual private networks with performance guarantees. The present invention offers a good solution to such a problem.
It should be noted that in a carrier owned transport network the TCP functionality would be in transport access points rather than host computers, the variability of paths will be low and parameters such as connection round trip time will be very stable. These features make it much easier to envisage modifications to the TCP protocol for these networks. However, the use of this invention can be more generally applied to other TCP hosts and other sliding window protocols.
Many flows on today""s networks carry only a small amount of information, say ten or twenty packets, and the rate adaptation feature of TCP is not as relevant as the reliability feature. Providing reliability without incurring TCP time-outs on the loss of a single packet would greatly improves user throughput and network efficiency.
It is therefore an object of the invention to provide sliding window based flow control for point-to-point connections in a packet network, which constrain the minimum and/or maximum bandwidths available to that connection.
It is another object of the invention to provide modifications to the TCP protocol to provide for constraining the minimum and/or maximum bandwidths achieved by the connection.
It is yet an object of the invention to ensure the absence of TCP retransmission timeouts for flow with small windows by maintaining a minimum rate of sending.
Briefly stated, in accordance with one aspect, the invention is directed to a method of sending data in packets via a connection by way of sliding window algorithm in which a flow of data into the connection is controlled in response to acknowledged packets and the connection observing either or both of a guaranteed minimum bandwidth and a maximum permitted bandwidth. The method comprises steps of (1) calculating a congestion window hereinafter called C-WND of the connection, (2) setting either or both of a guaranteed minimum bandwidth and a maximum permitted bandwidth and then respectively calculating either or both of a guaranteed minimum bandwidth window hereinafter called MIN-WND and a maximum permitted bandwidth window hereinafter called MAX-WND. The method further includes steps of (3) determining if the MIN-WND or MAX-WND is invoked on the connection, based on their relationship with C-WND and (4) allowing the transmission of one or more packets of data into the connection if either MIN-WND or MAX-WND permits said transmission.
According to another aspect, the invention is directed to an apparatus for sending data in packets via a connection by way of sliding window algorithm in which a flow of data into the connection is controlled in response to acknowledged packets and the connection observing either or both of a guaranteed minimum bandwidth and a maximum permitted bandwidth. The apparatus comprises a flow control module for controlling a flow of packets into the connection in response to acknowledged packets, a congestion window arithmetic module for calculating a congestion window hereinafter called C-WND of the connection and a bandwidth monitoring window arithmetic module for calculating either or both of a guaranteed minimum bandwidth window hereinafter called MIN-WND and a maximum permitted bandwidth window hereinafter called MAX-WND. The apparatus further includes control logic module for determining if the MIN-WND or MAX-WND is invoked on the connection, a transmitter for transmitting a series of packets of data into the connection and a controller for allowing the transmission of one or more packets of data into the connection if either MIN-WND or MAX-WND permits said transmission.

Apparatus for and method of managing bandwidth for a packet based connection


A magneto-resistive head, a magnetic tape and a magnetic tape recording/reproducing system, which are capable of suppressing the formation of protrusions around a magneto-resistive element, thereby preventing the occurrence of such problems as spacing loss and tape damage, are provided. A thermally conductive member that is connected to the magneto-resistive element is formed of a material having a thermal conductivity greater than 20 W/m·K so as to efficiently release the heat generated when the magneto-resistive element is in use and suppress the rise in temperature around the magneto-resistive element. In addition, by selecting, for a lubricant layer formed on the surface of the magnetic tape, a material whose melting point is higher than the operating temperature of the magneto-resistive element, the lubricant layer is prevented from melting even when the magneto-resistive element is in use and when the temperature of the magnetic head thus rises.

1. Field of the Invention
The present invention relates to magneto-resistive heads, magnetic tapes and magnetic tape recording/reproducing systems.
2. Description of the Related Art
In recent years, video tape recorders, audio tape recorders and data storage systems for computers have been known as magnetic recording/reproducing apparatuses that use magnetic tapes as recording media. It is desirable for these magnetic recording media to have their recording density increased so as to improve their storage capacity and data transfer rate. However, when the recording density of a magnetic recording medium is increased, magnetic signals from the magnetic recording medium become weaker, and it is difficult to detect reproduction signals sufficiently with conventional inductive magnetic heads that utilize electromagnetic induction.
As such, it is becoming popular to use magneto-resistive heads, which use a magneto-resistive element (hereinafter referred to as MR element) comprised of a soft magnetic film, and which have a higher reproductive sensitivity than inductive magnetic heads, for the reproduction of signals. Further, of the various types of magneto-resistive heads, so-called shielded magneto-resistive heads, in which an MR element is placed between magnetic shields comprised of a soft magnetic material and in which an end portion of the MR element is exposed through a surface that faces a magnetic recording medium, have the highest reproductive efficiency, and are suitable for increasing recording density.
FIG. 10 shows the structure of a rotary head magnetic recording/reproducing apparatus that uses a conventional magneto-resistive head, and is a partially enlarged perspective view showing the rotary head and its surroundings. In order to place a magnetic tape 2 in contact with a magnetic head 1, the magnetic tape 2 is made to slide along a rotary drum 3, a lead 4, and rotary guides 5. The magnetic tape 2 is designed in such a manner that the lower edge of the tape runs along the lead 4 of the rotary drum 3 so that the magnetic head 1 can trace tracks correctly. By having the magnetic head 1, which is a magneto-resistive head that uses an MR element, mounted on the rotary drum 3 and made to slide along the magnetic surface of the magnetic tape 2, magnetic data recorded on the magnetic tape 2 is read.
FIGS. 11A and 11B show the sliding surface of a conventional magneto-resistive head. FIG. 11A is a front view of the magnetic head 1, and FIG. 11B is an enlarged front view of the MR element of the magnetic head 1 and its surroundings. The magnetic head 1 is positioned at a head exposing section formed at a predetermined position in the rotary drum 3, and an MR element 8 is held in place with a guard member 10 and a protective layer 9. The magnetic head 1 has such a structure where the MR element 8 is held between shields 6 and 7 comprised of a soft magnetic material, and where the surroundings of the shields 6 and 7 and of the MR element 8 are covered with the protective layer 9.
One end surface of the MR element 8 is exposed through the surface of the rotary drum 3 that contacts the magnetic tape 2, and the magnetic tape 2, which runs by sliding along the lead 4 of the rotary drum 3, and the MR element 8 face each other across a very small gap.

Magneto-resistive head having a thermally conductive layer


A determination method includes: using a microchip, including a capillary flow path and a sample reservoir connected to the capillary flow path at an upstream side, to fill the capillary flow path with a first solution for electrophoresis, and supply the sample reservoir with a second solution containing an analyte; applying a voltage between the sample reservoir supplied with the second solution and the inside of the capillary flow path filled with the first solution, to move a component contained in the second solution in the capillary flow path and separate the component in the capillary flow path; optically detecting a value related to a component difference between the first solution and the second solution, other than a value related to the analyte, for the separated component; and determining whether the optical detection is favorable or poor by comparing the optically detected value with a predetermined threshold value.

In the field of clinical tests, specimen analysis by capillary electrophoresis has conventionally been conducted. In recent years, specimen analysis by electrophoresis using a microchip provided with a capillary flow path has been conducted in order to miniaturize and simplify an apparatus.
For example, an analyzer for analyzing blood proteins such as hemoglobin by capillary electrophoresis has been proposed (see, for example, Patent Document 1). An analysis method for analyzing HbA1c which is a glycated hemoglobin using an electrophoresis chip has also been proposed (see, for example, Patent Document 2).
In capillary electrophoresis, a capillary is irradiated with light, light transmitted through the capillary is detected, and a sample moving in the capillary is analyzed. When analyzing a sample using such an optical method, in order to improve the analysis accuracy, it is necessary to remove internal stray light (extra light not contributing to measurement) due to aberration, irregular reflection, or the like of lenses constituting an optical system. Therefore, for the purpose of improving the analysis accuracy, a microchip having a function of reducing the influence of stray light has been proposed (see, for example, Patent Document 3).

Determination method, analysis method, and analysis system


A method and an apparatus for driver assistance, in which a distinction is made, with the aid of operating variables and a classifier, between an intentional and unintentional lane change by the vehicle.

Methods and apparatuses, called driver assistance systems, are described in the existing art in a variety of manifestations. Examples of such driver assistance systems are adaptive cruise control (ACC) systems, which adapt the vehicle's speed to maintain a separation from a preceding vehicle; lane departure warning systems, which warn the driver upon departure from the lane; systems for monitoring the blind-spot, which warn the driver about objects in the "blind spot" of the driver's field of view when changing lanes, etc. An example of an adaptive cruise control system is shown in German Patent Application No. 101 18 295, and an example of a lane departure warning system in European Patent Application No. 1 074 430. In lane departure warning systems in particular, but also in some ACC embodiments, the system checks whether the vehicle is departing, or about to depart, from the lane delimited, for example, by road edge markings. A considerable functional improvement would be achieved here if a distinction could be made between an intentional and unintentional lane change, i.e. for example between a lane change for passing purposes and a lane change due to inattention by the driver.

Method and apparatus for driver assistance


This invention relates to a novel fluidized bed membrane reactor for autothermal operations. More particularly, this invention pertains to a unique fluidized bed membrane reactor which includes internal catalyst solids circulation for conveying heat between a reforming zone and an oxidation zone. A method of producing hydrogen gas from a hydrocarbon gas and steam comprising forming a fluidized bed of a suitable particulate catalyst in a reactor, wherein the catalyst is disposed in the reactor in two reaction modes, the first being an endothermic dehydrogenation reaction mode and the second being an exothermic oxidation or partial oxidation reaction mode, introducing a mixture of steam and hydrocarbon gas into the bottom of the fluidized bed to fluidize the particulate catalyst and form the fluidized bed, reacting the steam and hydrocarbon gas within the first endothermic dehydrogenation reaction mode to produce hydrogen gas, separating said hydrogen gas from other gases in the first endothermic dehydrogenation reaction mode as molecular or atomic hydrogen through a perm-selective membrane that permits the transfer of hydrogen therethrough while preventing or minimizing the transmission therethrough of the other gases in the endothermic dehydrogenation reaction mode, introducing oxidant in the second exothermic oxidation or partial oxidation reaction mode, and mixing same with other gases in the second exothermic oxidation and partial oxidation mode, and directing resultant oxidized gases to the first endothermic dehydrogenation reaction mode.

Membrane reactors have been proposed for numerous reactions that are thermodynamically limited such as: propane dehydrogenation to propylene, cyclohexane to benzene, ethyl benzene to styrene, steam-methane reforming to hydrogen and water-gas shift reaction to hydrogen. Most of those reactions are both reversible and endothermic. The concept of shifting thermodynamic equilibrium by removing one of the products, notably hydrogen in the case of steam-methane reformation and water-gas shift reaction, has been demonstrated to drive the reaction forward beyond its conventional thermodynamic limits thereby leading to economic and performance enhancements. Various concepts have been proposed for supplying the heat that is required for endothermic reactions. One concept is the use of heat pipes. Another concept is oxidizing part of the hydrocarbon feed in-situ by introducing an oxidant.
Membrane reactors provide a means for removing a reaction product from a reaction. Many different configurations of membrane reactors have been proposed over the years. One is a fluidized bed membrane reactor as disclosed in U.S. Pat. No. 5,326,550, Adris et al., granted Jul. 5, 1994. This patent discloses hydrogen gas being generated in a fluidized bed reactor by reacting gases namely steam and a hydrocarbon gas such as methane or natural gas in a fluidized bed of particulate catalytic material. The catalytic material is fluidized by injecting the mixture of the reacting gases at the bottom of the bed. Hydrogen generated within the bed is removed by using a selectively permeable membrane that extends through the bed and through a freeboard area above the bed. Since the reaction is endothermic, heat to maintain the bed at the desired temperature is added as required. Preferably a separator separates particulate catalytic material entrained in the gases in the freeboard area and returns the particulate material separated from the gas to the bed. The subject matter of this patent, insofar as it is relevant to the subject invention, is incorporated herein by reference.
Fluidized catalyst beds have the advantages of a high degree of solids mixing resulting in minimal temperature and concentration gradients, small particle size resulting in improved catalyst effectiveness and flexibility in shape and configuration which allows the fluidized bed to accommodate substantial permeation capacities.
U.S. Pat. No. 6,331,283 B1, Roy et al., granted Dec. 18, 2001, discloses a process of producing hydrogen by autothermal steam reformation of a hydrocarbon comprising the steps of providing a reactor vessel having a fluidized catalyst bed, introducing steam and a gaseous hydrocarbon into the vessel, introducing oxygen into the vessel, maintaining the fluidized catalyst bed temperature below the spontaneous combustion temperature of the hydrocarbon and withdrawing hydrogen from the vessel using a perm-selective membrane. The apparatus for producing hydrogen comprises a reactor vessel, steam and hydrocarbon inlets, an oxygen inlet, a fluidized bed of catalyst within the reactor vessel and a perm-selective membrane for withdrawing hydrogen from the vessel. The subject matter of this patent, so far as it is relevant to the subject invention, is incorporated herein by reference.

Internally circulating fluidized bed membrane reactor system


In a system where data is transmitted from a source device to a destination device via one or more buses, transmission mode selecting circuitry is provided to select one of a first transmission mode and a second transmission mode for the data in response to a mode selecting signal that indicates a latency requirement of the destination device. When data is sent using the second mode there is a lower latency between the destination device receiving the data and being able to process the data than when the first transmission mode is used.

It is known from "Frequent Value Encoding For Low Power Data Buses" Jun Yang et al, Association for Computing Machinery (ACM) Transactions on Design Automation of Electronic Systems, Volume 9, No. 3, July 2004, Pages 354 to 384 to encode data values to be transmitted so as to reduce switching activity on external buses for the purpose of reducing power consumption. However, this technique has the disadvantage that extra circuit resources and power are consumed by first encoding the data values to be transmitted and then subsequently decoding these values. Also, the encoding and decoding of the data values introduces a time delay.
It is known from "Reordering Memory Bus Transactions For Reduced Power Consumption" Bruce R. Childers et al. ACM SIGPLAN Workshop On Languages, Compilers, and Tools for Embedded Systems, during ACM SIGPLAN Conference On Programming Language Design and Implementation (PLDI'2000, June 2000) to examine with hardware the data words within a cache line being transferred to or from memory so as to determine a new order for the data words to be transferred in order to reduce switching activity and accordingly energy consumption. This additional hardware consumes power which detracts from the energy saved by reducing the switching activity on the buses. The additional hardware is also a disadvantageous complexity and cost overhead, and incurs a latency penalty due to the time taken to calculate a new order of transmission.
Thus, both Yang and Childers reduce the power consumed by the bus, but at the expense of latency. In some situations the latency incurred may be unacceptable. It is desirable to produce a system that improves the performance of data transfers over the bus without adversely affecting the latency of the system.
In the present application, the term "bus" is taken to mean a collection of one or more conductors. A bus can be a one-to-one connection, a one-to-many connection, a many-to-one connection, or a many-to-many connection. A bus may or may not connect devices via interconnect circuitry.


In one embodiment, the present disclosure may be a wrapping material for formed bales of materials, including at least one layer of a flexible plastic material film web divided into portions by a plurality of spaced lines of perforations, the web including a first surface and an opposite second surface, each portion having a first adhesive substrate adhered to the first surface of each portion adjacent to each line of perforation, each first adhesive substrate including a first adhesive surface adhered to the first surface of each portion and a second adhesive surface facing outwardly opposite the first adhesive surface, each portion having a second adhesive substrate adhered to the first surface of each portion, each second adhesive substrate including a first adhesive surface adhered to the first surface of each portion and a second adhesive surface facing outwardly opposite the first adhesive surface, and a first release liner overlying the second adhesive surface of the first adhesive substrate and a second release liner overlying the second adhesive surface of the second adhesive substrate.

It is known to form bales of harvested agricultural material, such as hay, silage making materials, cotton and the like, and to wrap same in plastic film web for storage and/or transport. It is also known to form bales of collected rubbish or waste materials and to wrap such bales in a plastic film web. One technique is to secure the formed bale initially with a net material and then to wrap same with plastics film web. A second technique is to wrap the formed bale in multiple overlapping layers of a plastic film web. Typically in such techniques the plastic film web is made from linear low density polyethylene that is made to be self adhesive to adhere to itself. In yet another technique, a single individual length of a plastic film web is used with an applied adhesive strip of sufficient strength to adhere and hold a wrapped bale. Such a technique is described in Australian patent specification nos. 2003292463 and 2005300259 which provide individual and separate lengths of plastic material web formed into a connected roll, each individual length being sufficient to wrap once around a desired bale size. Each individual and separate length is held to an adjacent length by a Z lock fold configuration at its ends and adhesive to form a temporarily continuous roll which in use in a suitable baler is separated from the roll by an applied force of sufficient strength to be then wrapped around and secured to a formed bale. A bale forming machine capable of using this type of wrapping material is disclosed in Australian patent specification no. 2008229852 and U.S. Pat. No. 6,263,650.
There is a need to provide an improved wrapping material for wrapping any material formed into a bale, but particularly for harvested agricultural material formed into a bale with substantially one pass of a plastics material film web having a predefined length. There is also a need to provide a method of manufacturing such a wrapping material in a continuous roll whereby each of the predefined lengths of the plastics material film web are formed in a continuous length of adjoining portions that are separable sequentially in a baling machine.

Wrapping material and method of manufacturing for baling materials