A carrot is sliced in the longitudinal direction in such a way that the slice surface passes through the core portion, the sliced carrot fragment is blanched and the blanched carrot fragment is extracted to obtain a vegetable extract, so as to manufacture a vegetable extract. By slicing the carrot in the longitudinal direction so as to pass through the core portion, a larger area of the core portion towards which the presence of nitrate ions is biased can be exposed, the contact area between the core portion and the blanching water can be increased and more nitrate ions can be eluted and removed at blanching time.

1. Field of the Invention
The present invention relates to a method for manufacturing vegetable juice and the like with decreased nitrate ions. More specifically, it relates to the method for manufacturing vegetable juice and the like wherein the nitrate ions are efficiently decreased in vegetable juice, vegetable extract, vegetable extract concentrate and the like, having carrot as ingredient.
2. Related Art Statement
Plants absorb nitrate nitrogen as nutrient to make amino acids and proteins. As such, nitrate nitrogen is a constituent that is indispensable for the plant, but at the same time, if nitrogen is supplied excessively in amounts that are more than the quantity necessary for growth, or if the balance with other nutrients such as phosphorus, potassium, calcium and magnesium collapses, or if photosynthesis does not proceed due to insufficient illumination, the entirety of the nitrate nitrogen that was absorbed is not metabolized into proteins and amino acids, and remains inside the body of the plant as is, in the form of nitrate nitrogen (nitrate ion).
When the nitrate nitrogen (nitrate ion) that remains inside the plant body is ingested inside the body of a human, a portion thereof is changed into nitrite ion inside the mouth and binds to amine to become "nitrosamine", a carcinogenic substance. Furthermore in the blood, it binds to hemoglobin, which transports oxygen, to become "nitroso hemoglobin", which is said to be a cause for triggering asphyxiation. In addition, nitrate nitrogen is also known as a causal substance of blood diseases in infants, such that decreasing nitrate ions in vegetables, vegetable juice and the like is desired.
The method of boiling the plant to achieve the decrease is well known as a method for decreasing nitrate ions. Boiling is said to allow the removal of approximately 30 to 45% of nitrate ions in case of leaf and stem vegetables and approximately 20% in case of root vegetables.
A thorough precaution is taken regarding the control of nitrate ion concentration also in the field of vegetable juice manufacturing, such that vegetable ingredients with as low as possible nitrate ion concentration are selected and used, or, methods have been adopted whereby the vegetables are blanched (boiled), or nitrate ions are adsorbed and eliminated by ion exchange treatment (see Japanese Patent Application Laid-Open No. 11-290041 and Japanese Patent Application Laid-Open No. 10-229858).

Method for manufacturing vegetable juice and the like with decreased nitrate ions


An intensity sensitive optical switch is described which comprises a nonlinear thin film Kerr material deposited on a conducting surface.

The present invention relates generally to optical switching devices, and more particularly to an optical switching device sensitive to changes in incident laser intensity.
The invention is an optical switching device capable of detecting small angular deviations in the propagation direction of a laser beam by measuring large changes in reflected intensity. The device comprises a nonlinear thin film Kerr material deposited on a conducting surface. When the device is properly aligned, it operates about a characteristic critical angle. The function of the device relies on nonlinear optical phenomena manifested by operation near a condition of bistability for a constant input intensity. If an incident beam wanders from this condition, the accompanying small angular deviation results and a precipitous change in reflected intensity occurs. The change in intensity is detectable by conventional means and may be used to realign the beam.
It is therefore a principal object of the invention to provide an improved optical switch.
It is a further object of the invention to provide an optical switch for laser beam alignment and control.
It is a further object of the invention to provide a device for sensing deviations in laser beam alignment.
It is a further object of the invention to provide a laser intensity sensitive optical switch.
These and other objects of the invention will become apparent as a detailed description of representative embodiments proceeds.

Thin film multistable angular optical switch

The United States of America as represented by the Secretary of the Air Force


When a printing fee is changed, if a printing fee is changed to one for a color amount that is smaller than an actual color amount of an input image, an image processing apparatus automatically performs image processing in order to maximize the color amount at the selected printing fee and prints an image processing result.

1. Field
Aspects of the present invention generally relate to an image processing apparatus that can determine a color amount, an image processing method, and a program.
2. Description of the Related Art
A technique discussed in Japanese Patent Application Laid-Open No. 2012-32668 determines whether each block of an input image is a color block or a monochrome block and determines a printing fee of the input image based on the amount of the color blocks.
However, according to Japanese Patent Application Laid-Open No. 2012-32668, if the determined printing fee is dissatisfactory for a user, the user has no choice but to cancel the printing.

Image processing apparatus capable of determining color amount, image processing method, and program


A method for programming a target memory cell in a memory array of a non-volatile memory system, the method comprising defining a default read biasing voltage value and a default verify biasing voltage value for each program state of a target memory cell of a memory structure, determining a location of a target memory cell within the memory structure and, based upon the determined location of the target memory cell, applying a first incremental offset voltage to the default read biasing voltage value with respect to each program state, and applying a second incremental offset voltage to the default verify biasing voltage value with respect to each program state.

Due to emerging technology and market forces, solid-state drives (SSDs) are steadily replacing previously conventional data storage systems that rely on the rotation of magnetic mediums for reading and writing data (e.g., hard disk drives). Rather than comprising any mechanical or moving parts, solid-state memory comprises integrated circuit assemblies or interconnected flash components to provide non-volatile storage in which stored data can be persistently retained even during a planned or unplanned interruption of power. As a result, a solid-state drive is inherently faster and more robust (i.e., less susceptible to data loss and corruption), as well as consumes less power and is more compact in comparison to disk-based storage. Accordingly, non-volatile memory is a powerful storage solution with respect to many types of computing, consumer electronic, and stand-alone external storage (e.g., USB drives) devices. Advances in non-volatile memory structures have led to significant increases in their storage density capability and a reduction in their power consumption, thereby lowering the per-bit and bit-per-chip cost.
Generally, a non-volatile memory device may be comprised of one or more arrays of individual memory cells. With respect to some flash memory types, each memory cell is comprised of a floating gate that is positioned above and isolated from a channel region of a semiconductor substrate, wherein the floating gate is positioned between the source and drain regions. Also, a control gate is provided over and isolated from the floating gate, wherein a threshold voltage (Vth) of the memory cell transistor is controlled by and dependent upon the amount of charge that is retained on the transistor's floating gate. Specifically, in a switch-like manner, a minimum amount of voltage that must be applied to the control gate of the transistor before the transistor is activated to permit conduction between its source and drain regions is, therefore, determined by the level of charge being retained on the floating gate. As a result, bit-value data can be programmed onto and erased from the cell by precisely changing the level of charge on the floating gate in order to change the threshold voltage (Vth) characteristic of the transistor. In an array structure, the memory cells are addressable by word lines (rows) and bit lines (columns). One type of non-volatile memory storage defined by this general structure is referred to as NAND flash memory based upon its electrical characteristics, which resemble a NAND logic gate.
As explained in detail below, the number of bits that can be stored in an individual memory cell is dependent upon the number of distinct voltage ranges that may be partitioned within the threshold voltage (Vth) window of that memory cell. For example, to store one bit of data (referred to as a binary data), the possible threshold voltage (Vth) of a memory cell can be divided into two voltage ranges, wherein the ranges are assigned as logical data "1" and "0" respectively. Accordingly, a memory cell of this storage density order may be referred to as a "single-level cell" or SLC.
By further partitioning the threshold voltage (Vth) window of a memory cell into additional distinct voltage ranges, multiple levels of information may be stored. A memory cell of this storage density order may be referred to as a "multi-state cell" or MLC. For example, in order to store two bits of data, the threshold voltage (Vth) window of a cell can be further partitioned into four distinct voltage ranges, with each range assigned a bit value equal to, for example, "11," "10," "01," and "00." Accordingly, following an erase operation, the cell's threshold voltage (Vth) is negative, which could be defined as logic "11." As such, the positive threshold voltages (Vth) can be used for the programmed states of "10," "01," and "00." In a further example, to store three bits of data, the threshold voltage (Vth) window of a cell may be partitioned into eight distinct voltage ranges, with each range assigned a bit value equal to, for example, "111," "110," "100," "010," "011," "000," "001," and "101." A memory cell of this storage density order may be referred to as a "tri-level," "triple-level cell," or TLC.
The specific relationship between the data programmed into a memory cell and the threshold voltage (Vth) levels of the memory cell depends on the data encoding pattern or data scheme adopted for the memory cells.
Thus, a memory device that comprises multi-state data (by incorporated MLC and/or TLC-type cells) has an increased storage capacity using the same MOSFET structure and wafer size as a memory device having a lower storage density (e.g., by incorporating SLC-type cells) and, therefore, provides a comparative cost per bit savings. However, as a consequence of the increased density, the tolerances between the partitioned voltage ranges of multi-state memory cells tighten and programming occurs at a slower speed relative to a single-state memory cell because the data is programmed to multiple target threshold voltage (Vth) ranges and requires a higher level of precision during programming. The increased storage density of a multi-state memory cell decreases the available margin of error between state changes and reduces the available voltage range capacity needed to endure the stress on the silicon oxide layer over successive programming/erase cycles. As a result, in comparison to a single-state cell, the durability of a multi-state storage element is significantly less.
In addition to the increasing storage densities with respect to a single memory cell, advances in non-volatile memory array structures have led to memory cells being stacked in a vertical direction with respect to the semiconductor substrate, thus creating a three-dimensional array structure as opposed to a planar two-dimensional array structure. As described in greater detail below, the lack of separation between the charge trapping regions of the memory cells in three-dimensional array structures provide further challenges with respect to the reliability and retention of the programmed data.
Accordingly, as the industry continues to achieve smaller sized memory cells with increased storage densities in order to store more data, this scaling of size entails certain performance and durability risks. In order to achieve the advantage of higher memory capacity for a fixed die size, smaller memory cells must be packed more closely together. Doing so, however, may result in an increased number of manufacturing, memory operation, and performance errors. For example, potentially catastrophic structural defects that occur between neighboring components, such as electrical shorting between adjacent word lines, occur more readily in compacted spaces. In addition, according to observations, in a scalable memory structure, there is a distinct challenge in maintaining the stability and the uniformity across an entire memory structure with respect to the semiconductor materials used to fabricate certain memory storage elements of the scalable memory, wherein such nonuniformities can lead to performance limitations and inconsistencies in, for example, operation of the memory's sense structure. As an example, there appears to be a distinct correlation, or dependence, between variations amongst the relative thicknesses of the multiple gate oxide (e.g., SiO2) layers that comprise a substructure (e.g., a memory cell, string or block) of a scalable memory (as a consequence of existing fabrication processes) and an inconsistency or unpredictability in, for example, the biasing voltage(s) that are necessary to program or erase a memory cell of the substructure with respect to the cell's target threshold voltage (Vth) range. Unfortunately, the presence or magnitude of variations in thicknesses amongst the multiple gate oxide layers is significantly more pronounced in the higher-density, bit-scalable (BiCS) memory devices, likely due to the compact and stacked nature of their storage elements, as well as their associated circuitry.
To compensate for these types of disturbances or inaccuracies, various algorithmic methods exist for identifying, filtering and/or correcting noise and bit errors during the read operation and subsequent processing. However, these overarching and generalized mitigation measures add complexity and latencies to the memory operations. Accordingly, there is a particular need for an improved mitigation or compensation mechanism that can operate at the point of a read or verify operation and in a predictive manner that harnesses, or takes into consideration, an observed relationship between a structural discordance or irregularity in the memory device and an operational effect, where such a factor exists, all while maintaining the scale and efficiency of high-density memory structures. Of particular focus herein is the discovered connection between the variable thicknesses of the gate oxide layers of a memory substructure and a corresponding fluctuation in the electrical resistivity that, in turn, causes problematic inaccuracies or disturbances in certain memory operations, leading to performance dissonances.

Read and verify methodology and structure to counter gate SiO


An impeller blade includes an elongate impeller blade body having opposing proximal and distal ends, opposing first and second edges extending from the proximal end to the distal end, and opposing upper and lower sides. The lower side includes a major generally concave channel extending from an open end thereof at the distal end of the impeller blade body to a closed end thereof adjacent to the proximal end of the impeller blade body.

Ceiling fans are as much a part of interior decor as furniture, household accessories and artwork. Often the design of a ceiling fan is carefully chosen to match or enhance a selected interior decor. Due to the importance that is now placed on new and innovative ceiling fan designs, and because ceiling fan design is considered by many to be an integral component of the fashion of interior and exterior living spaces, tremendous effort has been directed toward the design of ceiling fans, and particularly the design of the components of ceiling fans, including fan housing, fan blades, fan blade brackets, and ceiling fan light fixtures. As a result of this focus on design, comparatively little effort has been directed of late toward improving the structure and function of ceiling fans and to improving the air displacement characteristics of ceiling fans, which thus necessitates the continuing and ongoing improvement in the art.


A method performed in a liquid chromatography system that includes a metering device pushing a sample into a trap column. The metering device sucks in the sample from a sample reservoir, wherein the sucking in the sample from a sample reservoir precedes the step of pushing the sample into the trap column. The liquid chromatography system also includes a trap column and a metering device (100), wherein the system (1000) is adapted to assume a configuration allowing the metering device (100) to push a sample into the trap column (6) and wherein the metering device (100) is adapted to push the sample into the trap column (6) in this configuration, wherein the system (1000) is adapted to assume a configuration allowing the sample to be sucked into the system (1000) by means of the metering device (100). Furthermore, the invention relates to a use of the liquid chromatography system (1000) for liquid chromatography, in particular of high pressure liquid chromatography.

In LC systems, a liquid sample is introduced with an analytical pump into a separation column. Different constituents of the sample adhere to the separation column in a different manner. A pump pushes a solvent (or different solvents) through the separation column. Depending on, inter alia, the adherence of the constituents to the separation column, the solvent, the flow rate of the solvent and the pressure of the solvent, the different constituents of the sample need different amounts of time to pass through the separation column; generally, the more strongly a constituent interacts with the separation column, the longer it will need to pass through the separation column. This allows the constituents (and thus, the sample) to be determined and analyzed.
Introducing the sample into the separation column typically comprises different steps including (1) a sample pick up means, such as a needle, being introduced into a sample reservoir and picking up the sample. (2) The sample may then be introduced from the needle into a section for intermediate storing of the sample. Subsequently, (3) the sample may be introduced from the section for intermediate storing of the sample into the separation column. For this purpose, injection valves may be used. Such injection valves or distribution valves may connect different ports with one another to establish a fluid connection between different parts or sections of an LC system. For example, U.S. Pat. No. 3,530,721 discloses an apparatus for supplying liquid samples into a separation column. The apparatus includes a switch that can be switched from one state allowing a sample to be drawn into a receptacle (e.g., for carrying our steps (1) and (2)) to another state allowing the sample to be pumped from the receptacle into a column (e.g., for carrying out the above described step (3)). U.S. Pat. No. 4,939,943 discloses an injector including a high pressure syringe unit and a valve unit for LC, which valve unit is adapted to assume different positions, one for sample pick up and one for introducing the sample into a chromatographic column.
A further variant of LC systems includes a so-called trap column. Instead of intermediate storing of the sample in a simple section of tubing or in a simple receptacle, the sample may first be introduced into a trap column and constituents of the sample may adhere to the trap column (which may also be called a "pre-column"). Thus, by means of the trap column, the sample may be concentrated. In other words, when injecting the sample through a trap column, the sample is guided with the help of a pumping device through the trap column (or pre-column). The sample components remain hanging in the column on the material in the column. The sample can therefore be concentrated. Subsequently, the sample may be entrained in an analytical flow from the trap column through the separation column. Again, switching from the first step (introducing a sample into the trap column) to the second step (providing a flow to introduce the sample from the trap column to the separation column) may be done by switching of a valve. In other words, after introducing the sample into the trap column, the trap column is connected with an analytical flow, the sample detaches from the trap column, and is guided into the separation column (which may also be referred to as an analytical column). The separation of the sample from the trap column is enabled by the interaction of the sample with the column and the flow.
A part of such systems are samplers that are responsible for sample management and accurate collection of the sample. After sample collection, the sample is either brought to an analytical fluid path by the switching of valves, or first pumped into the above described trap column for concentration with the help of a pumping device. The trap column is then connected to the analytical fluid path, as also described above.
The analytical pump then either pushes the sample directly through the trap column (continuation of the flow direction) or away from the trap column to the separation column (reversal of the flow direction). In the separation column, the sample separation then takes place due to the different interactions of the sample constituents with the column and the flow. After the column, the sample is passed through a detector that detects each constituent of the sample, e.g. by optical detection.
That is, in very simple words, a sample is picked up and introduced into a trap column. The trap column is then fluidly connected to a separation column and the sample is supplied from the trap column to the separation column. The supplying of the sample from the trap column to the separation column is typically done by means of an analytical pump providing a pressure exceeding the atmospheric pressure. In HPLC, this pressure may be on the order of 1000 bar, such as 1500 bar.
For the above described process, LC systems are typically used. Such systems typically comprise a plurality of components, including a sample pick up means, a metering device for introducing a desired amount of a sample into the system, a separation column for separating the constituents of the sample and pumps for providing a flow between the components. As discussed, a trap column may also be provided, e.g., for sample concentration. The discussed components may be fluidly connected with each other (i.e., connected in such a way that fluid may flow from one component to another and/or vice versa) by means of a valve, which valve may also be referred to as a switching valve or a distribution valve. Such a valve may selectively connect the components to one another.
While known systems are satisfactory in some regards, they have certain disadvantages and limitations. For example, as discussed, the known systems comprise a plurality of different components. This make these systems complex and prone to failure, as each component may malfunction. The complexity of the systems also makes such systems difficult to service. Furthermore, such complex systems also need a relatively large amount of space.

Liquid chromatography system, method and use


An intraosseous access system can include a needle that defines a lumen and a longitudinal axis about which the needle can be rotated during an insertion event. The needle can include a proximal end that remains at an exterior of a patient during use, a distal end that can be inserted through the skin of the patient into contact with a bone of the patient, and a distal tip at a distalmost point of the distal end of the needle that is positioned at the longitudinal axis of the needle. The system can further include an obturator sized to be received within the lumen of the needle that can inhibit material from entering the needle as the system is inserted into the bone.

Many devices, systems, and methods have been developed to for accessing an interior of a bone of a patient, including for such purposes as intraosseous access. Known devices, systems, and methods, however, suffer from one or more drawbacks that can be resolved, remedied, ameliorated, or avoided by certain embodiments described herein.

Intraosseous access devices, systems, and methods


A switch SW 11 comprises a ferroelectric memory 26 and an AND gate 28. A data input line L11 and an output terminal of the ferroelectric memory 26 are connected to an input terminal of the AND gate 28. Also, the output terminal of the AND gate 28 is connected to an AND input line L21. In order to write the switching data which switches the state of the switch SW11 either to an open state or a closed state into the ferroelectric capacitor 26, ferroelectric capacitors C11 and C12 are polarized in opposite directions with each other. The polarization is carried out in a short period, and the polarization state can be maintained even when the power is turned off. So that, the switching data can be written repeatedly by changing direction of the voltage applied to the ferroelectric capacitors C11 and C12.

1. Field of the Invention
This invention relates to a programmable functional device, more specifically to switches used for the programmable functional device.
2. Description of the Related Art
A programmable logic device (hereinafter referred to as PLD) is known as large scale integrated circuit(hereinafter referred to as LSI) capable of programming logic functions by the user(s). The PLD has a wide variety of devices such as a programmable logical array (hereinafter referred to as PLA) and a field programmable gate array (hereinafter referred to as FPGA). The PLA is an example of a small scale PLD having a basic structure consisting of an AND portion and an OR portion. Also, the FPGA is an example of a large scale PLD.
These PLDs are constructed so as to provide a number of logic circuits and the like on the chip for the LSI, and the logic circuits are connected to one another through switches capable of programming. So that, it is possible to realize desired logic functions by switching the switches in accordance with the programs programmed by the user(s).
Thus, an LSI having desired logic functions can be realized in a short period of time by utilizing the PLD.
However, the PLD in the prior art described in the above has the following disadvantages. A fuse 2 shown in FIG. 9A is used as a switch capable of programming in the prior art. Disconnection of a line 4 and a line 6 can be done by burning out the fuse 2. However, it is not possible to connect the fuse 2 again, once the fuse 2 has been burned out. So that, the logic functions can not be rewritten as a result of disconnection.
To resolve the problem stated in the above, an electrically erasable and programmable read only memory (hereinafter referred to as EEPROM) 8 shown in FIG. 9B can be used as the switch instead of the fuse 2. Although rewriting of the logic functions can be achieved as a result of using the EEPROM 8, it requires a long time to rewrite the logic functions. Therefore, the EEPROM 8 cannot be applied to a switch that needs to be operated under real-time bases.
In order to realize simulated rewriting of the logic functions under real-time bases while using the EEPROM 8, a method using two individual units each of which includes a certain numbers of logic circuits etc. (hereinafter, each of the unit is referred to as a tile) is proposed. In this method, a total of two tiles being twice the number of tiles used in regular operation are mounted, and rewriting of the logic functions is carried out one after another exclusively. In other words, the rewriting of one tile is carried out while the other tile is performing routine data processing as regularly executed by a PLD. Although the method allows the EEPROM 8 to prevent suspension of processing for long period of time when the rewriting is carried out, the area of the chip must be increased to twice as much for mounting the two tiles.
A static random access memory (hereinafter referred to as SRAM) 10 shown in FIG. 9C can be used in order to carry out rewriting of the logic functions under real-time bases. Although rewriting of the logic functions under real-time bases can be carried out by utilizing the SRAM 10, another non-volatile memory device is required to secure the contents of the rewriting because the SRAM is a volatile memory device.

Programmable functional device having ferroelectric material


A television tuner includes: low band and high-band receiving units; a mixer that frequency-converts low-band television signals from the low-band receiving unit or high-band television signals from the high-band receiving unit; first and second switching diodes that couple the low-band or high-band receiving unit and the mixer to each other, respectively; and a transistor which applies a bias voltage to one end of each of the switching diodes. The emitter of the transistor is grounded and the collector is pulled up to a power supply through a resistor. ON/OFF of the switching diodes are switched to be opposite to each other. The other end of each of the switching diodes is connected to the collector through a first inductance element. The collector of the transistor is connected to one end of a second inductance element, and the other end of the second inductance element is grounded in a high-frequency manner.

1. Field of the Invention
The present invention relates to a television tuner.
2. Description of the Related Art
A conventional television tuner will be described with reference to FIG. 2. In FIG. 2, an interstage double-tuned circuit 53 (hereinafter, referred to as a double-tuned circuit) is provided between a high-frequency amplifier 51 and a mixer 52. A primary tuning circuit 53a includes a high-band tuning coil 54 and a low-band tuning coil 55 connected in series at one end of each coil, and a varactor diode 56 connected in parallel to the high-band tuning coil 54 and the low-band tuning coil 55 connected in series. An anode of the varactor diode 56 is grounded, and a cathode thereof is connected to the other end of the high-band tuning coil 54 through a DC-blocking capacitor 57 interposed therebetween.
In a similar manner, a secondary tuning circuit 53b includes a high-band tuning coil 58 and a low-band tuning coil 59 connected in series at one end of each coil, and a varactor diode 60 connected in parallel to the high-band tuning coil 58 and the low-band tuning coil 59 connected in series. An anode of the varactor diode 60 is grounded, and a cathode thereof is connected to the other end of the high-band tuning coil 58 through a DC-blocking capacitor 61 interposed therebetween.
Further, the other ends of the low-band tuning coils 55 and 59 are connected to one end of a coupling coil 62, and the other end of the coupling coil 62 is grounded through a DC-blocking capacitor 63.
Furthermore, a connection point of the high-band tuning coil 54 and the low-band tuning coil 55 in the primary tuning circuit 53a is connected to a cathode of a switching diode 64, and an anode thereof is grounded through a DC-blocking capacitor 65. Similarly, a connection point of the high-band tuning coil 58 and the low-band tuning coil 59 in the secondary tuning circuit 53b is connected to a cathode of a switching diode 66, and an anode thereof is grounded through a DC-blocking capacitor 67.
In addition, the anode of the switching diode 64 is connected to a high-band switching terminal 69 through a resistor 68, and similarly, the anode of the switching diode 66 is connected to the high-band switching terminal 69 through a resistor 70.
Moreover, a connection point of a coupling capacitor 62 and the DC-blocking capacitor 63 is connected to a low-band switching terminal 72 through a resistor 71. Also, a tuning voltage is applied to the cathode of the varactor diode 56 from a tuning voltage terminal 73 through a resistor 74, and similarly, the tuning voltage is applied to the cathode of the varactor diode 60 from the tuning voltage terminal 73 through a resistor 75.
A peaking circuit 76 is provided between the double-tuned circuit 53 and the mixer 52. The peaking circuit 76 is DC-blocked from the double-tuned circuit 53 by a DC-blocking capacitor 77 and also DC-blocked from the mixer 52 by a DC-blocking capacitor 78.
The peaking circuit 76 is composed of a peaking coil 79, a switching diode 80 and a DC-blocking capacitor 81 connected to each other in series. The peaking coil 79 is connected to the DC-blocking capacitors 77 and 78, and one end of the DC-blocking capacitor 81 is grounded. Also, a cathode of the switching diode 80 is connected to the low-band switching terminal 72 through a resistor 82, and an anode thereof is connected to the high-band switching terminal 69 through a resistor 83. The inductance of the peaking coil 79 and an input capacitance 84 of the mixer 52 are set to cooperate to resonate with the frequency of a lower-band television signal within the range of high-band television signals.
In the above-mentioned configuration, when high-band television signals included in a VHF band are received, a current passes through both of the switching diodes 64 and 66 by a switching voltage applied to the high-band switching terminal 69, so that the double-tuned circuit 53 is in a state in which the high-band television signals are received. The switching voltage applied to the high-band switching terminal 69 is also applied to the anode of the switching diode 80, so that the switching diode 80 is also in an electrical connection state. As a result, a parallel resonating circuit is constructed by the peaking coil 79 and the input capacitance 84 of the mixer 52.
Further, by the parallel resonating circuit constructed by the peaking coil 79 and the input capacitance 84 of the mixer 52, the gain of a lower-band television signal within the range of the high-band television signals is increased.
In addition, by the tuning voltage applied to the tuning voltage terminal 73, the double-tuned circuit 53 is tuned to a desired frequency (for example, see Japanese Unexamined Patent Application Publication No. 11-275478 (FIG. 2)).
However, the television tuner has a complicated configuration because the interstage tuning circuit is a band switching type. Also, since the peaking circuit can not be constructed when low-band television signals are received, there is a problem in that a gain deviation in the low band cannot be solved.

Television tuner capable of reducing gain deviation when low-band or high-band signal is received


Screen brightness is improved in an IPS type liquid crystal display device.

1. Field of the Invention
The present invention relates to a display device and it particularly relates to a liquid crystal display device capable of improving the screen brightness.
2. Description of the Related Art
A conventional liquid crystal display device includes a TFT substrate having a pixel electrode, thin film transistors (TFT), etc. formed in a matrix; a counter substrate disposed in facing relation to the TFT substrate and having a color filter, etc. formed at portions corresponding to the pixel electrodes of the TFT substrate; and liquid crystals put between the TFT substrate and the counter substrate. Images are formed by controlling the transmittance of light for every pixel by liquid crystal molecules.
Since liquid crystal display devices are flat and light in weight, their application use has been extended in various fields. Small-sized liquid crystal display devices have been used generally for mobile phones and DSOs (Digital Still Cameras). The liquid crystal display devices involve a problem of a so-called viewing angle characteristics in which contrast or color changes when a screen is viewed from the oblique direction to the screen. For the viewing angle characteristics, IPS (In Plane Switching) liquid crystal display device (hereinafter referred as a IPS) have excellent characteristics.
While IPS include various IPS types, liquid crystal display devices of a type in which an insulating film is formed on a rectangular first electrode, over which a comb-shaped second electrode is disposed have been used generally so far. When the first electrode is a pixel electrode, the second electrode is a common electrode and, on the contrary, when the first electrode is a common electrode, the second electrode is a pixel electrode.
At the end of the comb-shaped electrode of the second electrode, a domain tends to be generated by reverse rotation of liquid crystal molecules. Particularly, touch panel systems have been popularized recently and, in this system, the surface of a liquid crystal display panel is touched by a finger or the like. Then, the liquid crystal molecules rotate by the pressure and it take a time to return to the initial state, to cause a problem of deteriorating image quality. The problem is hereinafter referred to as pressing domain. In order to overcome the problem, JP-A-2000-330123 describes a configuration of preventing generation of pressing domain by bending the top ends of the comb-teeth in a range of larger than 1° and smaller than 90°.

Abstract: A common electrode having a slit is disposed over a rectangular pixel electrode with an insulating film attached therebetween. The slit has a linear part and a bend part. The bend part is necessary for preventing pressing domain. The transmittance in the bend part is increased by making the thickness of the insulating film below the bend part of the slit to less than the thickness of the insulating film at the linear part of the slit, thereby increasing the transmittance of the entire pixel. Thus, the screen brightness can be improved.


A power semiconductor device includes a backside metal layer, a substrate formed on the backside metal layer, a semiconductor layer formed on the substrate, and a frontside metal layer. The semiconductor layer includes a first trench structure including a gate oxide layer formed around a first trench with poly-Si implant, a second trench structure including a gate oxide layer formed around a second trench with poly-Si implant, a p-base region formed between the first trench structure and the second trench structure, a plurality of n+ source region formed on the p-base region and between the first trench structure and the second trench structure, a dielectric layer formed on the first trench structure, the second trench structure, and the plurality of n+ source region. The frontside metal layer is formed on the semiconductor layer and filling gaps formed between the plurality of n+ source region on the p-base region.

1. Field of the Invention
The present invention relates to a power semiconductor device, and more particularly, to a power semiconductor device capable of improving voltage spike effect produced during switching and stability of the manufacturing process.
2. Description of the Prior Art
A trench power transistor is a typical semiconductor device in power management application, such as switching power supplies, power control ICs of computer systems or peripherals, power supplies of backlight, motor controllers, etc. With the high switching speed of the trench power transistor, a voltage spike effect produced during switching may affect operating performance. Therefore, to solve the above-mentioned problem, the ratio of the input capacitance to the reverse transfer capacitance of the trench power transistor needs to be enhanced to an optimal value for suppressing the voltage spike effect.
In order to improve the voltage spike effect produced during switching, the prior art provides modifications on the structure of the trench power transistor to optimize the ratio of the input capacitance to the reverse transfer capacitance. For example, U.S. Pat. No. 7,253,473, U.S. Pat. No. 7,037,788, U.S. Pat. No. 6,809,349, U.S. Pat. No. 6,806,548, and U.S. Pat. No. 6,777,295 disclose trench semiconductor devices which form a gate electrode upon the trench surface by reducing the trench depth, so as to enhance the ratio of the input capacitance to the reverse transfer capacitance of the trench power transistor. However, through the above-mentioned structures, several problems, such as non-uniform implant or unusual P-N junction avalanche, often occur.

Semiconductor device for improving the peak induced voltage in switching converter


A driving device for driving a light source module (12), includes an inverter circuit (15) for converting a received signal to a signal driving the light source module, a feedback and filter circuit (13) for feeding back currents flowing through the light sources and filtering radio frequency interference (RFI) signals of feedback currents, and a controller (14) electrically connected between the feedback and filter circuit and the inverter circuit. The feedback and filter circuit includes at least one filter for filtering the RFI signals of the feedback currents, and a resistor (R) for feeding back the current flowing through the light source module. The filter includes an impedance (Z11) including a first terminal designated as an input of the filter and a second terminal, and a capacitor (C11). The capacitor includes a third terminal designated as an output of the filter and a fourth terminal electrically connected to ground.

1. Field of the Invention
The invention relates to light source driving devices, and particularly to a light source driving device used in a liquid crystal display (LCD) backlight module.
2. Description of Related Art
Conventionally, discharge lamps, especially cold cathode fluorescent lamps (CCFL), have been used as backlight sources in liquid crystal display (LCD) panels, and often are driven by an inverter circuit supplying alternating current signals to the discharge lamps. According to current from a feedback circuit flowing through the discharge lamps, a controller controls output of the inverter circuit. However, the current flowing through the discharge lamps is prone to be interfered with by outer radio frequency (RF) signals, such as, from 824 megahertz to 1909.8 megahertz signals from global system for mobile communication (GSM), resulting in flashes of the discharge lamps.
Therefore, a heretofore unaddressed need exists in the industry to overcome the aforementioned deficiencies and inadequacies.


A self-propelled harvesting machine having an internal combustion engine, a propulsion system that can be operated to cause the harvesting machine to move across a field with a propulsion speed, a crop material pick-up device for picking up the crop material from a field, a crop material processing device for processing the crop material that has been picked up, a control unit for specifying the speed of the internal combustion engine, and a through-put measurement device for determining the through-put of the harvesting machine. The control unit can be operated to vary the speed of the internal combustion engine depending on the signal from the through-put measurement device. In this manner the RPM of the internal combustion engine that is most favorable in terms of fuel consumption and that corresponds to the power to be applied at a given through-put can be specified.

1. Field of the Invention
The invention generally relates to a self-propelled harvesting machine.
2. Related Technology
Forage harvesters are harvesting machines that, during harvesting operations, pick up and chop crop material standing or lying in a field and discharge it into a transport vehicle. The transport vehicle drives adjacent to or behind the forage harvester. Although it has already been suggested to saddle mount the transport container on the forage harvester, or to attach a transport trailer to a trailer coupling of the forage harvester, in practice, self-propelled transport vehicles that drive independent of the forage harvester have become common. This makes it possible with fodder material to construct a transport chain from the field to the silo with a plurality of transport vehicles.
When transferring the crop material, the driver of the transport vehicle drives adjacent to or, especially when entering the field, behind the forage harvester. In order to avoid losses from crop material that falls onto the ground instead of reaching the transport container, both vehicles must drive at approximately the same speed. For synchronization, it has been suggested to provide a wireless communication connection with which the movement of the transport vehicle is controlled by the forage harvester or vice versa. Such systems have not in the past become common in practice due to their complexity. Currently, therefore, the driver of the forage harvester equipped with a hydraulic propulsion system specifies a propulsion speed that the driver of the transport vehicle is to maintain.
The speed, in revolutions per minute (RPM), of the internal combustion engine of the forage harvester, is generally constant during harvesting operations, but can be varied by the operator within certain limits. Fuel consumption is unnecessarily high when the internal combustion engine is operated at higher RPM but is only slightly loaded with low throughputs. On the other hand, at lower RPM there is the risk that the internal combustion engine will stall or that the crop material will back up in the discharge channel when higher through-puts are processed.
It has also been suggested to specify the RPM of the internal combustion engine as a function of the width of the crop material attachment and the length of the discharge chute of the forage harvester in order to reduce fuel consumption when the forage harvester has less of a load. Although the RPM of the combustion engine is matched to the throughput, this matching is relatively imprecise and is only a function of the expected through-put, not the actual through-put.
Furthermore, it has been suggested to set the propulsion speed of the forage harvester as a function of the through-put. The RPM of the internal combustion engine remains constant. Although this means the internal combustion engine of the forage harvester can be loaded optimally, the propulsion speed will change at varying densities, which will make it difficult or impossible for the driver of the transport vehicle to drive in synch adjacent to the forage harvester.
In combine harvesters, the RPM of the internal combustion engine is also generally constant during harvesting operations. The thresher and separating devices are driven via gears with a variable transmission ratio, such as with variator drives or planetary gears in which one element is driven by the internal combustion engine and one element is driven hydraulically for RPM variation and one acts as output drive. It has also been suggested to adjust the RPM of the internal combustion engine in order to attain the desired RPM of the threshing and separating rotor. In this case, as well, the RPM of the internal combustion engine depends on the crop material through-put and fuel consumption is therefore not always optimal.
In combine harvesters, the propulsion speed in the prior art is also either specified by the operator or automatically regulated using the through-put. In such an arrangement, in order to facilitate the transfer of the harvested grain from the grain tank of the combine harvester to a transport vehicle, with an activated unloading conveyor it is known to perform the changes in the propulsion speed with a smaller amplification factor. Although this means that the speed does not vary as greatly, it is not constant. In addition, the load on the combine harvester is then not necessarily optimum.
In combine harvesters it has also bee suggested to detect the torque that the internal combustion engine outputs to the driven elements. If the measured torque is lower than a certain threshold value, which indicates that for lower through-puts, for instance in harvesting special crops or non-rectangular blocks, less power is taken off than the internal combustion engine can output at its RPM, the RPM of the internal combustion engine is reduced. A gear transmission between the internal combustion engine and the driven elements, such as the threshing drum, keeps the RPM of the driven elements constant despite the change in RPM in the internal combustion engine. This measurement is relatively imprecise, since it is based on only a portion of the through-put, while the power taken off from the propulsion system is included in the measurement value.


Compositions and methods are described in which a primary detergent or surfactant in an aqueous solution is removed by the addition of a secondary detergent or surfactant in concentrations that exceed the critical micellar concentration (CMC) of the secondary detergent or surfactant. These compositions and methods are particularly applicable to protein-containing solutions. Typical primary detergents/surfactants include polysorbate 20, polysorbate 80, and Triton X-100. Suitable secondary detergents or surfactants can be ionic, nonionic, or zwitterionic. Typical secondary detergents/surfactants include, but are not limited to, galactoside detergents (e.g. octyl-β-galactoside), glucamide detergents (e.g. MEGA 8, MEGA 9, MEGA 10), cholamide detergents (e.g. CHAPS, CHAPSO, BIGCHAPS), and sulfobetaine detergents (such as sulfobetaine 3-10).

The following description includes information that may be useful in understanding the present invention. It is not an admission that any of the information provided herein is prior art or relevant to the presently claimed invention, or that any publication specifically or implicitly referenced is prior art.
Excipients are frequently added to small molecule (e.g. <500 D) and/or protein solutions (such as pharmaceutical preparations) in order to reduce aggregation, prevent nonspecific binding to container surfaces, and otherwise improve stability. Conventional excipients include proteins (such as human or bovine serum albumin, ovalbumin, immunoglobulins, etc.), sugars and polysaccharides, and soluble polymers (such as polyvinylpyrrolidone). In an attempt to provide non-immunogenic formulations, nonionic and zwitterionic detergents and surfactants are increasingly being used for this purpose. Many detergents and surfactants, however, interfere with analytical methods used for characterization and/or quality control of such solutions (such as immunoassays, peptide reporter-based assays, cell based assays, mass spectrometry, etc.).
Unfortunately, detergents and surfactants can be problematic to remove from solution once introduced. Ion exchange can be used for removal of charged (e.g. cationic or anionic) detergents and surfactants, however many surfactants in common use do not carry a formal charge. Hydrophobic media can bind large amounts of detergent and/or surfactant, however such hydrophobic media can also bind significant amounts of the protein of interest (which may be present in low concentrations). Dialysis is used for detergent or surfactant removal with only partial success, as self-association of detergents or surfactants into micelles reduces the amount of "solvated" surfactant or detergent available for removal by dialysis. As a result, concentration gradient driven dialysis for removal of detergents and surfactants is very slow. The formation of micelles also interferes with efforts to remove surfactants and detergents by more active size-based separation methods, such as gel filtration and ultrafiltration, as their size leads to retention by ultrafiltration membranes and exclusion from the internal volume of gel filtration media.
Commercial products are available for removal of surfactants and detergents from aqueous solutions. For example, ThermoFisher's HiPPR resin purports to remove 95% of surfactant or detergent from low concentration protein/peptide solutions while maintaining protein/peptide content. G Biosciences offers a DetergentOUT™ resin described as having a high affinity for most surfactants and a low affinity for most proteins and peptides. Calbiochem provides a hydrophobic CALBIOSORB™ resin for use in batchwise removal of surfactants, and suggests using the resin in a dialysis buffer in order to avoid nonspecific binding of proteins of interest. It is not clear, however, if such products are effective in removal of the polysorbate surfactants that are increasingly being used as excipients or if all proteins/peptides are retained in solution following treatment.
Extraction of peptide solutions using organic solvents, such as ethyl acetate, is utilized in some applications. In such extractions the relatively hydrophobic detergent transfers to the relatively insoluble organic layer of the extraction mixture. Due to the possibility of irreversible denaturation, however, such methods are generally followed by characterization of physical properties of the protein (for example, by mass spectrometry) that may not be informative in regard to activity.
Thus, there is still a need for a simple and convenient method for removal detergents and/or surfactants from aqueous solutions, while retaining functional proteins and/or peptides in the solution.

Compositions and methods for removal of detergents from aqueous solutions


Selective photocoagulation of particular cells, tissue or portion of tissue can be aided by monitoring microcavitation within the material exposed to electromagnetic radiation (12). The information gained by the detection of microcavitation events can be used to modulate the intensity of the radiation (12) to prevent significant thermal energy transmission and mechanical damage to cells, tissues or portions of tissues which are not directly exposed, but prone to thermal damage by such energy transmission. Detection of microcavitation also serves as a valuable therapeutic endpoint. The methods of the invention are applicable to laser eye surgery, since the target cells of several therapeutic photocoagulation methods, the retinal pigment epithelial (RPE) cells are proximate to photoreceptor cells. The inventive methods can help prevent the formation of blind spots that can be associated with laser eye surgery. Other fields of laser surgery can also be readily adapted to the methods described herein.

Laser surgery has become a generally useful technique, requiring specialized equipment and techniques. Laser surgery is indicated in the treatment of many eye diseases. For example, lasers are used to treat the ocular complications of diabetes. For glaucoma patients, lasers help to control the pressure inside the eye when medications alone do not succeed. Lasers are used to seal holes in the retina, and prevent or treat retinal detachments. Macular degeneration is another condition where lasers can sometimes help prevent vision loss. Laser surgery is also used after cataract surgery to improve vision, if necessary.
The retinal pigment epithelium (RPE) is a single cell layer, situated in the back of the eye behind a sensitive neuroretinal layer, with a high pigment density that can be targeted by laser irradiation. Retinal laser surgery can be classified into techniques which rely on thermal damage to the neuroretinal layer (such as retinal welding), and those that desirably do not involve damage to the neuroretinal layer (such as photocoagulative treatment of central serous retinopathy, diabetic macular edema, and drusen).
Conventional laser photocoagulation of the retina is performed with long pulses (on the order of from about 10 to about 500 ms) generated from a continuous wave laser, with the majority of the energy absorbed by the RPE. Heat diffusion during the long exposure to the laser pulse results in a relatively large zone of thermal damage, causing irreversible thermally-induced damage of not only the RPE cells, but also the photoreceptors and the choroicapillaris, producing scotomas (blind spots) in the treated areas.
Selective RPE photocoagulation is a recently developed therapeutic approach that uses short (microsecond) laser pulses to, ideally, target retinal pigment epithelial cells while not affecting adjacent photoreceptors in the retina, as described in U.S. Pat. No. 5,302,259 to Birngruber, and U.S. Pat. No. 5,549,596 to Latina. These treatment methods do not produce blind spots, as does conventional laser photocoagulation. In fact, this treatment does not produce any visible changes in the fundus during treatment. However, clinicians have to rely on post surgery fluorescein angiography to determine if the treatment endpoint has been reached, a treatment that requires approximately an hour and is inconvenient for the patient.


Aspects of the invention can provide a display device, a display method, and a projection type display device that allow a characteristic of a display image such as brightness to be continuously changed. The display device can include a light source capable of emitting a plurality of different color lights and a white light, and an optical modulation device for modulating light corresponding to the lights emitted from the light source. The ratio of the period of emitting the white light relative to the total of the periods of emitting the lights from the light source can be variable.

Aspects of the invention relate to a display device, a display method, and a projection type display device.
As information equipment has made remarkable developments, there has been an increasing demand for high resolution, less power consuming, and thin image display devices, and search and development are underway to provide such devices. Among all, a liquid crystal display device can electrically control the orientation of liquid crystal molecules and change the optical characteristics, and is expected to be a display device to satisfy the above demand. A projection type liquid crystal display device (liquid crystal projector) that expands and projects a display image emitted from an optical system using a liquid crystal valve on a screen with a projection lens is as an example of a related art liquid crystal display device.
The projection type liquid crystal display devices are divided into so-called three-plate type devices and single plate type devices. In the three-plate type device, light from the light source is for example separated into three R (red), G (green), and B (blue) color lights, and three liquid crystal light valves corresponding to these color lights are used to carry out optical modulation. The single-plate type device carries out optical modulation to the color lights using one liquid crystal light valve. The single plate type display device that uses only one liquid crystal light valve has a simple optical system accordingly, and therefore can be compact.
When color display is carried out using a white light source in the single-plate, projection type display device, there are two kinds of such display. One is a space divisional type display in which a liquid crystal light valve including a color filter is used and three dots for R, G, and B form one pixel. The other is a time divisional type display in which a white light is temporally separated into R, G, and B color lights using a color wheel or the like, and time divisional driving (color sequential display) is carried out using the liquid crystal light valve.
Techniques of irradiating R, G, and B color lights to a light valve using a light source (such as a light emitting diode (LED)) that emits these color lights instead of a white light source and a color filter have been disclosed. However, the quantity of light emitted from the LED is less than that of a light source, such as a lamp, and the displayed image could be dark. An image displayed by the color sequential display described above can be even darker, and techniques of brightening displayed images have been developed. See, for example, Japanese Patent Laid-Open No. 2002-251175.
In the disclosure of Japanese Patent Laid-Open No. 2002-251175, when an image is brightened based on the display content in a display device that carries out color sequential display, the color components of color lights R (red), G (green), and B (blue) are changed to C (cyan), Y (yellow), and M (magenta).
By the method disclosed by Japanese Patent Laid-Open No. 2002-251175, when the color components are changed (for example from (R, G, B) to (C, Y, M)), change in the brightness of the image can be disconnected. When the brightness change is disconnected in the image, the viewer may find the displayed image unnatural.

Display device, display method, and projection type display device


A method for forming within a Field Effect Transistor (FET) for use within an integrated circuit a polycide gate electrode. There is first provided a semiconductor substrate. Formed upon the semiconductor is a patterned polysilicon layer. Formed then upon the semiconductor substrate and the patterned polysilicon layer is a blanket insulator layer. The blanket insulator layer is then patterned through planarizing to form a patterned planarized insulator layer while simultaneously exposing the surface of the patterned polysilicon layer. Finally, there is formed upon the exposed surface of the patterned polysilicon layer a patterned metal silicide layer. The patterned metal silicide layer and the patterned polysilicon layer form a polycide gate electrode. The metal silicide layer within the polycide gate electrode is not susceptible to encroachment upon adjoining insulator spacers or source/drain regions within the Field Effect Transistor (FET) within which is formed the polycide gate electrode.

1. Field of the Invention
The present invention relates generally to gate electrodes employed within advanced Field Effect Transistors (FETs). More particularly, the present invention relates to a method for forming polycide gate electrodes employed within advanced Field Effect Transistors (FETs).
2. Description of the Related Art
Integrated circuits are formed upon semiconductor substrates within and upon whose surfaces are formed resistors, transistors, diodes and other electrical circuit elements. The electrical circuit elements are connected internally and externally to the semiconductor substrate upon which they are formed through patterned conductor layers which are separated by insulator layers.
As integrated circuit technology has advanced, there has been a continuing trend towards increasing levels of integrated circuit integration, integrated circuit performance and integrated circuit function. Within advanced integrated circuits within which there are formed Field Effect Transistors (FETs), such increasing levels of integrated circuit integration, integrated circuit performance and integrated circuit function have typically been achieved by simultaneously decreasing within those Field Effect Transistors (FETs) both the thicknesses of gate dielectric layers and the widths of semiconductor channel regions which are formed beneath those gate dielectric layers. The decreasing width of semiconductor channel regions within Field Effect Transistors (FETs) has in turn typically required a correlating decrease in areal dimensions of polysilicon gate electrodes which are conventionally employed as a masking element in defining within advanced Field Effect Transistors (FETs) the dimensions of semiconductor channel regions as well as the locations of source/drain regions which are separated by those semiconductor channel regions.
While the continuing increases in integration have successfully provided advanced generations of integrated circuits with increasing levels of performance and function, the continuing decreases in areal dimensions of polysilicon gate electrodes conventionally employed in forming Field Effect Transistors (FETs) within those advanced integrated circuits have required the use of polysilicon gate electrodes having low contact resistance layers formed upon their surfaces. The low contact resistance layers formed upon the polysilicon gate electrodes within advanced Field Effect Transistors (FETs) have typically been required in order to avoid contact resistance induced gate electrode electrical circuit delay which would otherwise result from higher contact resistance connections made directly to polysilicon gate electrodes of reduced areal dimension. The resulting polycide (polysilicon/metal silicide stack) gate electrodes have typically conventionally been formed as either a tungsten silicide polycide gate electrode or a titanium silicide polycide gate electrode, often through a self-aligned silicide (salicide) method which simultaneously provides corresponding tungsten silicide layers or titanium silicide layers upon the surfaces of adjoining source/drain regions of the Field Effect Transistor (FET) within which is formed the tungsten silicide polycide gate electrode or the titanium silicide polycide gate electrode. See, for example, Ahmad et al., U.S. Pat. No. 5,382,533, which illustrates the use of a tungsten silicide polycide gate electrode within a Field Effect Transistor (FET).
As areal dimensions of tungsten silicide polycide gate electrodes or titanium silicide polycide gate electrodes employed within Field Effect Transistors (FETs) have continued to decrease and define semiconductor channel regions beneath those tungsten silicide polycide gate electrodes or titanium silicide polycide gate electrodes of linewidth less than about 0.25 microns, the problem of contact resistance induced gate electrode electrical circuit delay again becomes important since the sheet resistances of both tungsten silicide layers and titanium silicide layers which define the contact resistances of both tungsten silicide polycide gate electrodes and titanium silicide polycide gate electrodes inherently increase dramatically at linewidths of less than about 0.25 microns. Thus, in order to avoid contact resistance induced gate electrode electrical circuit delay within integrated circuits having formed therein advanced Field Effect Transistors (FETs) with tungsten silicide polycide gate electrodes or titanium silicide polycide gate electrodes of linewidth less than about 0.25 microns, there has recently been proposed and implemented the use of polycide gate electrodes comprising cobalt silicide layers or nickel silicide layers rather than tungsten silicide layers or titanium silicide layers, since cobalt silicide and nickel silicide have an inherently lower contact resistance in comparison with either tungsten silicide or titanium silicide when formed in patterned layers of linewidth less than about 0.25 microns.
While the cobalt silicide polycide gate electrodes and nickel silicide polycide gate electrodes so formed have served well in providing gate electrodes exhibiting the decreased levels of contact resistance induced gate electrode electrical circuit delay desired within advanced integrated circuits, the methods through which such cobalt silicide polycide gate electrodes and nickel silicide polycide gate electrodes are formed within advanced Field Effect Transistors (FETs) are not entirely without problems. In particular, it is known in the art that the conventional self-aligned method for metal silicide layer formation within polycide gate electrodes, when employed for forming a cobalt silicide polycide gate electrode or nickel silicide polycide gate electrode, will typically yield a cobalt silicide layer or nickel silicide layer exhibiting substantial encroachment onto insulator spacers which adjoin the cobalt silicide polycide gate electrode or nickel silicide polycide gate electrode. Such encroachment may lead to electrical shorts between the cobalt silicide polycide gate electrode or the nickel silicide polycide gate electrode and the adjoining source/drain electrode regions which are separated by the insulator spacers, particularly under circumstances where the adjoining source/drain electrode regions also have simultaneously formed upon their surfaces self-aligned cobalt silicide layers or nickel silicide layers. It is thus in general towards the goal of forming within advanced Field Effect Transistors (FETs) cobalt silicide polycide gate electrodes, nickel silicide polycide gate electrodes and other metal silicide polycide gate electrodes which exhibit limited susceptibility to encroachment upon adjoining insulator spacers or source/drain regions that the present invention is directed.
Methods and materials through which may be formed within integrated circuits cobalt silicide layers and/or nickel silicide layers exhibiting desirable properties are known in the art. For example, Duchateau et al. in U.S. Pat. No. 5,302,552 disclose a method for forming without encroachment a self-aligned cobalt silicide layer or nickel silicide layer within an integrated circuit. The method employs annealing upon the exposed silicon portions of a silicon semiconductor substrate an amorphous alloy comprising cobalt or nickel in combination with an additional metal selected from the group of metals consisting of titanium, zirconium, tantalum, molybdenum, niobium and hafnium. In addition, Geiss et al. in U.S. Pat. No. 5,356,837 disclose a method for forming within a silicon semiconductor device an epitaxial cobalt silicide layer with limited susceptibility to agglomeration. The method employs annealing a silicon semiconductor device having formed thereover a bilayer comprising a cobalt layer formed over a refractory metal layer or a refractory metal silicide layer. Finally, Chen et al. in U.S. Pat. No. 5,457,069 disclose a method for forming within an integrated circuit a silicon semiconductor device having simultaneously formed thereover a titanium-tungsten barrier layer and a cobalt silicide layer or platinum silicide layer contacted shallow junction. The method employs forming and annealing upon the silicon semiconductor device a metal bilayer consisting of a lower metal layer comprising titanium metal alloyed with either cobalt metal or platinum metal, and an upper metal layer formed from tungsten.
Desirable in the art are additional methods and materials through which metal silicide layers such as cobalt silicide layers and nickel silicide layers may be formed within integrated circuits while exhibiting specific properties. Particular desirable are methods through which low resistance and high encroaching metal silicide layers such as cobalt silicide layers and nickel silicide layers when employed in forming polycide gate electrodes such as cobalt silicide polycide gate electrodes and nickel silicide polycide gate electrodes within Field Effect Transistors (FETs) within integrated circuits may be formed without encroachment of the low resistance and high encroaching metal silicide layers onto insulator spacers or source/drain regions adjoining the polycide gate electrodes formed with the low resistance and high encroaching metal silicide layers.

Method for forming a polycide gate electrode

Chartered Semiconductor Manufacturing Ltd.


In a display device, a demultiplexer is used to transmit a data current to a data line. The demultiplexer includes a plurality of sample/hold circuits for sampling the time-divided and sequentially input current and holding them to the data line. A plurality of data lines coupled to the demultiplexer are coupled to pixels of the same color, and hence, currents with different levels are transmitted to pixels of different colors. A sample/hold circuit for transmitting a higher level current uses a driving transistor having a larger ratio of a channel width and a channel length.

(a) Field of the Invention
The present invention relates to a demultiplexing device and a display device using the same. More specifically, the present invention relates to a demultiplexing device for demultiplexing current using a sample/hold circuit.
(b) Description of the Related Art
A display device requires a gate drive integrated circuit (IC) for driving scan lines and a data drive IC for driving data lines. The data drive IC has output terminals corresponding to the number of data lines since it converts digital signals into analog signals and applies the analog signals to all the data lines. A plurality of data drive ICs are used to drive all the data lines since the number of output terminals on a single IC is limited. Hence, demultiplexers are adopted so as to reduce the number of data drive ICs.
For example, a 1:2 demultiplexer receives data signals time-divided and applied by the data drive IC through a signal line, divides them into two data groups, and outputs them to two data lines. Therefore, usage of a 1:2 demultiplexer reduces the number of data drive ICs by half. Recent liquid crystal displays (LCDs) and organic electroluminescent displays are beginning to mount the data drive ICs on the panel, and in this instance, there is a greater need to reduce the number of data drive ICs.
Analog switches are used to configure a demultiplexer. For example, in the case of a 1:2 demultiplexer, two analog switches are coupled between a signal line of the data drive IC and two data lines, and the analog switches are alternately turned on to alternately transmit the data signals time-divided and applied through the signal line to the two data lines. The organic electroluminescent display uses the method of programming data using current in order to program the data on the pixels. When using the analog switches, the time for applying the data current to a data line is half the horizontal period. Therefore, the data current is insufficiently programmed to the pixels since the time for programming the data on the pixels is reduced as compared to using no demultiplexer.

Demultiplexing device and display device using the same


The carrier vehicle includes a coaxial two-wheel vehicle including two wheels arranged on the same axial centerline, a cart, and a coupling mechanism to couple the coaxial two-wheel vehicle to the cart. The coupling mechanism 4 includes a roll rotation tolerance portion that tolerates, when a traveling direction of the coaxial two-wheel vehicle is defined as a roll axis, rotation of the coaxial two-wheel vehicle in a roll direction. Further, the coupling mechanism includes a pitch rotation tolerance portion that tolerates, when a left-and-right direction of the coaxial two-wheel vehicle is defined as a pitch axis, rotation of the coaxial two-wheel vehicle in a pitch direction.

It has been considered that coaxial two-wheel vehicles have such a configuration that they are smaller and lighter and have higher operability in comparison to other vehicles such as automobiles and motorcycles. Therefore, they may possibly be used, for example, in vast facilities such as airports. Therefore, it might be useful if a cart loaded with baggage or the like can be coupled to the coaxial two-wheel vehicle so that a carrier vehicle can be formed from the cart and the coaxial two-wheel vehicle.
Accordingly, Patent literature 1, for example, discloses a cart that is coupled to a coaxial two-wheel vehicle so that the cart can be pulled by the coaxial two-wheel vehicle. The cart is coupled to the coaxial two-wheel vehicle in such a manner that the rotation of the coaxial two-wheel vehicle in the yaw direction and the pitch direction can be tolerated.
Meanwhile, Patent literature 2 discloses a coaxial two-wheel vehicle having such a structure that the coaxial two-wheel vehicle turns by rotating the vehicle main body in the roll direction. In this coaxial two-wheel vehicle, the vehicle main body, which is composed of a parallel link mechanism, is disposed in such a manner that the vehicle main body can rotate in the left-and-right direction of the coaxial two-wheel vehicle. Wheels are rotatably disposed in vertical links on both sides, i.e., left and right sides of the vehicle main body. Step plates on which a rider rides are provided on the upper ends of the vertical links of the vehicle main body. In the coaxial two-wheel vehicle, when a rider riding on the step plates tilts a turning operation portion coupled to the vehicle main body, the turning operation portion is tilted and the opposed links of the vehicle main body rotate while the opposed links are maintained in the paralleled state. In this state, the vertically-arranged horizontal links of the vehicle main body are horizontally disposed. The coaxial two-wheel vehicle has such a configuration that the vehicle detects the tilting angle of the turning operation portion with respect to the vertically-arranged horizontal links by using a sensor, and thereby turns by changing the rotation speeds of left and right wheels. In the coaxial two-wheel vehicle like this, since the step plates are tilted toward the turning center as the vehicle main body is rotated during the turning action, the user can be brought into a state where the user can easily cope with the centrifugal force.


The invention relates to a brake regulator interposable between a hydraulic pressure source and a motor-vehicle brake circuit, of the type comprising a housing equipped with a bore, a simple or differential piston sliding in the bore and delimiting there a first (18) and a second (20) pressure chamber capable of being connected to the pressure source and to the brake circuit respectively, the chambers (18, 20) communicating with one another by means of a passage made in the piston, a valve mounted in the passage and stretched elastically to bear sealingly against a seat formed on the piston, and a return boring interposed between a movable element, the position of which varies as a function of the load of the vehicle, and the piston, so as to stress the latter toward the bottom of the second chamber (20), in a rest position in which the valve is set apart from its seat by a stop (30). The bottom (15) of the second chamber (20) assumes a reentrant shape, the piston (16) comprises a tab (44) projecting opposite the substantially lowest part (13) of the bottom (15), and the stop (30) mounted movably relative to the bottom (15) rests on the bop of a preformed washer (40) forming a lever when the tab (44) bears on it.

The present invention relates to an improvement to brake regulators for motor vehicles and more particularly to regulators of the type comprising a housing equipped with a bore, a simple or differential piston sliding in the bore and delimiting there a first and a second pressure chamber capable of being connected to a source of fluid under pressure and to one of the brake circuits of the vehicle respectively, the chambers communicating with one another by means of a passage made in the piston, a valve mounted in the passage and stressed elastically to bear sealingly against a seat formed on the piston, and a return spring interposed between a movable element, the position of which varies as a function of the load of the vehicle, and the piston, so as to stress the latter towards the bottom of the second chamber, in a rest position in which the valve is set apart from its seat by a stop.
Such a brake regulator, more especially designed as a "compensator", is particularly described, and its function and operating mode explained, in FR-A-2,383,048 or EP-A-0,156,666 (Perrin U.S. Pat. No. 4,615,566).
In a regulator of the above-mentioned type, it is desirable, to obtain a correct operation of the brakes when the actuating fluid is put under pressure, to have a relatively wide opening of the valve, that is to say a sufficient setting of this valve (usually consisting of a ball) apart from its seat in the rest position of the piston. Moreover, it is necessary as far as possible to reduce the stroke of the piston between its rest position and its position corresponding to the activation point of the compensator, that is to say that in which the ball comes to rest on its seat, the purpose of this being to avoid disturbing the information transmitted to this piston in the form of a force reflecting the load of the vehicle.
Since these two requirements are incompatible in principle, an object of the present invention is to correct this deficiency, and to achieve this it provides a brake regulator of the above-mentioned type, in which the relative movement of the ball and piston is amplified in relation to that of the piston and body.

Brake regulator with lever and improved response time


A packaged electronic device includes a thickness shaped IC die including a top portion, top surface, active circuitry, bottom portion and bottom surface. A cross sectional area of the bottom surface is ≧5% less than a cross sectional area of the top surface to provide a protruding lip having a bottom lip surface. A package substrate includes a top substrate surface including substrate bonding sites, a bottom substrate surface, and a die support structure on the top substrate surface having a gap region. The bottom lip surface of the IC die is secured to the die support structure and the bottom surface of the IC die extends below the die support structure into the gap region. Coupling connectors couple the bonding features on the IC die to the substrate bonding sites.

Delamination of a packaged IC die from its mounting surface, which is commonly triggered by die attach stress, is a known problem. One type of die attach stress (generally referred to as "differential coefficients of thermal expansion (CTE) stress") is induced by heating (or cooling) a packaged IC die that arises from forces produced by the large differential CTE between the IC die and the die mounting surface (e.g., a die attach pad) that is often present, such as when the IC die comprises silicon and the die pad comprises copper.
A window pad type of lead frame is a type of lead frame that is used for construction of electronic packages. This type of lead frame is characterized by an opening (or "window") located in the center of the die pad. Due to the reduced contact area between the IC die and the window pad lead frame, such arrangements help to prevent delamination of the mounted IC die from the lead frame. However, such arrangements generally have poor thermal performance due to the high thermal resistance of the epoxy-mold compound of the package that is between the IC and a heat sink (e.g. the ambient) in such arrangements.
To address thermal performance, some packages provide direct exposure of a portion of the IC die (e.g., the bottom of a silicon die) to an external heat sink (e.g. to a mother board or to the ambient), to bypass the thermal resistance of the package and thus improve the thermal performance of the packaged IC. Such packages are generally referred to as exposed silicon packages. Conventional exposed silicon packages include a solid (window-less) die pad, wherein the top surface of the IC die comprising active circuitry is attached by a die adhesive (e.g., epoxy) to a die pad that has an area substantially less then the area of the IC die. The bottom of the IC die is substantially coplanar with respect to the outer surface of the package and is thus exposed for coupling to an external heat sink.
In one alternate arrangement, an exposed silicon package includes a window pad lead frame. In this arrangement, an opening is formed in the central portion of the die-attach pad as a die-mounting ring for exposing one side of an IC die. The IC die has a conventional uniform shape (i.e. the cross sectional area of the IC die is constant in its thickness direction). The exposed surface of the IC die is recessed with the respect to the outer surface of the package which provides a cavity region that allows external cooling media to directly contact the exposed side of the IC die through the cavity. The exposed surface of the integrated circuit die is cooled, for example, with a cooling fluid, a heatsink, or a thermo-electric refrigeration unit in contact with the exposed side of the IC die.
Exposed silicon packages have several known problems. Problems for conventional exposed silicon packages include bleeding of the die attach adhesive (e.g., epoxy) onto the top surface of the IC die which can result in bonding and reliability problems, as well as die tilt. Die tilt can cause leakage of molding resin commonly referred to in the art as "mold flush", as well as die cracking. In addition, both conventional exposed silicon packages and the alternate arrangement described above do not provide a mold lock to the IC substrate (e.g., silicon), so that ambient moisture can enter the packaged IC and reach the IC die, and as a result can cause reliability problems including delamination.

Delamination resistant packaged die having support and shaped die having protruding lip on support


A method for selecting a plurality of base stations to position a mobile device is provided. The method includes selecting a plurality of base station sets from the plurality of base stations, wherein each of the plurality of base station sets corresponds to a distance matrix, utilizing a first artificial neural network (ANN) unit to select a predefined number of the plurality of base station sets from the plurality of base station sets according to a plurality of distance matrixes corresponding to the plurality of base station sets; and utilizing a second ANN unit to position the mobile device according to the predefined number of the plurality of base station sets.

1. Field of the Invention
The present invention relates to a method and a system for selecting a plurality of base stations to position a mobile device, and more particularly, to a method and a system which utilize a plurality of artificial neural network units for selecting a plurality of base stations to be to a plurality of base station sets, so as to position a mobile device.
2. Description of the Prior Art
In the development of wireless communications and the mobile device, it has become an important issue to accurately estimate a current position of the mobile device and to correspondingly provide wireless communication services from a plurality of base stations. In the prior art, the mobile device and its neighboring base stations are utilized to generate a plurality of line-of-sight (LOS) vectors to be taken into an artificial neural network, such as a back-propagation neural network (BPNN), to position the mobile device. Please refer to FIG. 1, which illustrates a schematic diagram of a conventional artificial neural network (ANN) 10. As shown in FIG. 1, the ANN 10 includes an input layer 100, a hidden layer 102 and an output layer 104. The input layer 100 receives the plurality of LOS vectors, the hidden layer 102 processes a calculation, and the output layer 104 outputs an estimated position of the mobile device corresponding to the calculation. The hidden layer 102 of the prior art can utilize a training model to adaptively receive the plurality of LOS vectors for continuous iteration calculation and to adaptively adjust a connective weighting value of the plurality of LOS vectors, so as to complete a training of the ANN 10 for correspondingly outputting the estimated position. However, during the iteration calculation of the prior art, it may result in complicated redundant calculation for the ANN 10 while the ANN 10 receives all the LOS vectors corresponding to the plurality of base stations. In the meanwhile, the complicated redundant calculation is accompanied by longer calculation periods, which is inconvenient for users' practical operation.

Method and system for selecting base stations to position mobile device


The present invention relates to novel human proteins and isolated nucleic acids containing the coding regions of the genes encoding such proteins. Also provided are vectors, host cells and recombinant methods for producing the proteins of the invention. The invention further relates to diagnostic and therapeutic methods useful for diagnosing and treating disorders related to these novel human secreted proteins.

Identification and sequencing of human genes is a major goal of modern scientific research. For example, by identifying genes and determining their sequences, scientists have been able to make large quantities of valuable human gene products. These include human insulin, interferon, Factor VII, human growth hormone, tissue plasminogen activator, erythropoeitin and numerous other proteins. Additionally, knowledge of gene sequences can provide keys to diagnosis, treatment or cure of genetic diseases such as muscular dystrophy and cystic fibrosis.
Despite the great progress that has been made in recent years, only a small number of genes which encode the presumably thousands of human proteins have been identified and sequenced. Therefore, there is a need for identification and characterization of novel human proteins and corresponding genes which can play a role in detecting, preventing, ameliorating or correcting disorders related to abnormal expression of and responses to such proteins.


The invention relates to a method of treating orofacial pain in a patient wherein an effective amount of capsaicin is topically applied to the skin of the face and/or the neck and/or the scalp overlying the trigeminal or upper cervical nerves and it is left in place for a time sufficient to relieve the symptoms thereof.

Orofacial pain represents a huge morbidity for millions of Americans. Tooth pain alone represents significant morbidity with millions having toothaches on a daily basis. In addition, the TMJ syndrome and orofacial myofacial pain may affect up to 10-15% of the population.
Numerous etiologies of facial pains have been described. These include typical pains of dental origin, myopathic pains, neurogenic pains, vascular associated pains, atypical facial pains and sinus related pains. These pains are typically considered to be deep pains requiring interventions which are systemic or direct topical treatments or invasively or surgically directed treatments at the site of pain. The treatments have included ear drops (placed into the ear for ear pain), topical solutions (applied directly to the gums and teeth for tooth pain), local injections (into gums for tooth pain or into trigger points), a variety of systemic analgesics (aspirin, acetaminophen, non-steroidal anti-inflammatory agents and narcotics), a variety of other systemic agents (steroids, diphenylhydantoin, carbamazepine, calcium channel blockers, beta-blockers, and tricyclic antidepressants) and surgical procedures (tooth extractions, sinus operations, etc.).
Although some reasonable treatments are available, no simple, cutaneously applied, rapidly acting and effective treatment has been described to date for the deeper orofacial pains.

Indirect method of treating orofacial pain


A cargo bed cover in which two frames are used to provide a rigid fabric shell. The first frame is rigid and is constructed of metal piping or other suitable material. The second frame is constructed of flexible stock preferably having a substantially flat cross section and sewn into or secured to the fabric material. Acting as battens, the flexible stock tends to keep the fabric taut during wind pressure either through ambient conditions or through the vehicle's movement. The flexible frame is secured to the rigid frame through ties.

This invention relates generally to vehicles and more particularly to covers for cargo beds.
Cargo beds on vehicles have always suffered from a dual objective: on the one hand, the user wants an open cargo bed since this allows easy loading and unloading; yet, on the other hand, there are times when the cargo requires protection from the elements and security from theft.
In an attempt to provide this protection, an assortment of caps, shells, or rigid covers have been developed which fully enclose the cargo bed. These shells provide for optimal protection from the elements and from theft; but, they are also heavy and extremely cumbersome to remove and store should the user desire an open cargo bed. Because of this, typically once the shell is attached to the vehicle, it is seldom removed.
To solve this problem, a variety of mechanisms have been developed which attempt to make the shell easier to remove and store. Some such mechanisms are described in: U.S. Pat. No. 5,056,855, entitled "Vehicle Bed Cover Assembly" issued to Moravsky on Oct. 15, 1991; U.S. Pat. No. 5,016,935, entitled "Collapsible Cap for a Pickup Truck Box" issued to Semple on May 21, 1991; U.S. Pat. No. 4,784,429, entitled "Collapsible Camper Top for Pick-up Trucks" issued to Hodges on Nov. 15, 1988; and, U.S. Pat. No. 5,054,841, entitled "Portable Pickup Truck Camper Shell Standard or Roll Bar Model" issued to Zalman on Oct. 8, 1991.
In all of these situations though, the resulting mechanism was so complex that its purpose was averted--to make the shell easier to attach or remove from the pickup.
Going to an extreme was the creation of the tonneau cover which covers only the lower portion of the cargo bed. One such apparatus is described in U.S. Pat. No. 4,792,178, entitled "Truck Tonneau Cover Assembly" issued to Kokx on Dec. 20, 1988.
Although easy to use, the tonneau cover is extremely restrictive on the cargo which can be enclosed and as such it has not won wide acceptance.
In an effort to reduce the weight and expand upon the cargo space available, a variety of tarpaulin or fabric covered shells have been developed, including: U.S. Pat. No. 3,785,694, entitled "Flexible Cover Assembly" issued to Sargent on Jan. 15, 1974; U.S. Pat. No. 4,380,350, entitled "Truck Box Tarpaulin Assembly" issued to Block on Apr. 19, 1983; U.S. Pat. No. 4,310,194, entitled "Tent Camper for Pickup Truck" issued to Biller on Jan. 12, 1982; U.S. Pat. No. 4,756,325, entitled "Collapsible Canopy for Pick-up Trucks" issued to Daniels on Jul. 12, 1988; U.S. Pat. No. 4,955,660, entitled "Test Structure for Pickup Truck" issued to Leonard on Sep. 11, 1990.
Although these tarpaulin and fabric shells are lighter and generally easier to install and remove, the all suffer from deformation and drag due to the forces of wind. As the vehicle travels, or even during a windy day, the fabrics tend to whip and bow causing additional drag to the vehicle and wear on the fabric.
It is clear from the foregoing that there exists a need for an improved cargo bed cover which is easy to install, easy to remove, light weight, and yet resists wind deformation.


The autonomic nerve regulating agent of the present invention, which, has sedative action, sleep inducing action, and stress mitigating action in individuals, regardless of individual variation in sensitivity to or preference for fragrance, contains as an active ingredient a sesquiterpene alcohol with a boiling point of 250° C. or higher, particularly cedrol.

1. Field of the Invention
The present invention relates to an autonomic nerve regulating agent having sedative action, sleep improving action, stress mitigation action, and the like.
2. Discussion of the Related Art
When the balance between the activities of the parasympathetic nervous system and the sympathetic nervous system is upset by physical and mental stress, the resulting disequilibrium in the autonomic nervous system can lead to mental aggravation, making it difficult to fall asleep very easily (sleep induction) and resulting in shallow sleep. It is believed that stimulating the physiological predominance of the parasympathetic activity over the sympathetic activity can reduce stress and calm aggravated mental states, thus inducing favorable sleep.
Methods that have long been used to thus stimulate the predominance of the parasympathetic activity over the sympathetic activity include the oral or percutaneous administration of active ingredients to humans, as well as aromatherapy involving vaporizable fragrance compositions to allow the vapors to be inhaled. Recent proposals include methods in which bitter orange essential oil (Japanese Laid-Open Patent Application Kokai) H4-128234) and jasmine lactone (Japanese Laid-Open Patent Application (Kokai) H6-40911) are administered by absorption via the nasal mucosa, oral mucosa, or pulmonary tissue for better sleep induction.
The use of the low-boiling components of cedar wood oil (such as α-pinene, α-cedrene, β-cedrene, and caryophyllene) as a sedative essential oil has also been proposed (Japanese Laid-Open Patent Application (Kokai) H5-255688).
It is not altogether clear-whether or not the effects of such fragrances or essential oil components are determined solely by their action on the autonomic nervous system, and it has been assumed that action mediated by other physiological routes, including the lower central nervous system, may be involved.
There is substantial individual variation in the sensitivity to and preference for scents (fragrances) such as bitter orange essential oil and jasmine lactone. While these may have sedative and sleep inducing action for some people, they may on the contrary be disagreeable or irritating to others. There is thus a need for a component or method capable of universally improving autonomic nervous imbalances (in other words, restoring the balance to a physiologically ideal state) whose effects are not biased by odor perceptions.
The low-boiling components of cedar wood oil have a strongly characteristic fragrance, and their sedative actions are also subject to considerable individual variation in terms of people's sensitivity and preferences in the same manner as bitter orange essential oil and the like.