A fast DTMF detector for filtering a packetized linear voice signal to identify whether the voice signal contains a DTMF tone. The detector includes a plurality of parallel notch filters for knocking down DTMF tones. The energies of the filtered signals output by the notch filters are calculated and criteria based upon the calculated energies are applied to determine if the voice signal contains a DTMF tone. The criteria include an energy differential test, a twist test, a low frequency tolerance test, a high frequency tolerance test, a packetized linear voice signal energy level test, a dial tone filtered signal energy level test, and a 1004 Hz filtered signal energy level test.

Dual tone multi-frequency (DTMF) signals were originally developed to facilitate the automated dialing of telephone numbers by end-users. They have since found wider application in transmitting other information, such as for example in voice mail systems and automated telephone menu systems. In the public switched telephone network (PSTN), DTMF signals are transmitted in-band with voice signals. A set of standards have been developed to set specifications for how DTMF is to be generated and when a DTMF tone should be recognized. For example the International Telecommunications Union has developed standards ITU-T Q.23 and ITU-T Q.24.
A DTMF signal is a sum of two predetermined frequencies, one selected from a set of four low frequency tones, and one selected from a set of four high frequency tones. Each pair of tones represents one of sixteen keys. The standard telephone keypad only uses the first twelve keys, and not the four alphanumeric keys (A to D), which are reserved for future use. The frequencies and their corresponding keys are outlined below in Table 1.
TABLE 1f(Hz)1209133614771633697123A770456B852789C941*0#D
Digital packet-based networks, like the Internet, are increasingly being used for transmission of telephone signals. The use of packet-based networks for telephony presents a problem for DTMF signaling. The compression techniques used for preserving bandwidth in packet-based networks are acceptable for speech, since the associated degradation is tolerable; however, these compression techniques degrade DTMF signals to an extent that they no longer satisfy the standards and will fail to be recognized at the receiver.
In order to address this problem, packet-based networks mat attempt to detect DTMF tones in a voice signal so as to strip them out before transmitting the voice signal. The DTMF tones represent alphanumeric information, and can easily and more efficiently be sent as a separate binary signal, or be otherwise encoded in the packetized linear voice signal. Accordingly, a packet-based network may employ a DTMF detector.
Another difficulty encountered with packet-based signals is that of end-to-end delay. Delay results from the processing associated with packetization and compression, and from the inherent delay in transmission through routers. Delay in packet-based telephony is particularly noticeable to the users.
Detecting a DTMF tone takes a certain amount of time, and the lag associated with this detection time can result in a portion of the DTMF tone leaking in-band prior to the detection occurring and prior to triggering a muting of the DTMF tone. At the receiving end, this leaked portion will be recombined with a regenerated DTMF signal and can result in spectral line splitting, which in turn can result in a failure to detect a valid DTMF digit. In some cases, it can lead to the false detection of double digits.
To avoid the spectral line splitting problem, a transmission delay must be incorporated so as to hold the voice packet while the DTMF detector attempts to detect a DTMF signal. The voice packet is only sent once the DTMF detector has finished analyzing whether or not the packet contains a DTMF signal. Therefore, DTMF detectors having a significant delay will further aggravate the delay problems of packet-based telephony.
Existing DTMF detectors typically require at least 10 milliseconds to analyze a packet for DTMF signals.
Accordingly, there remains a need for a DTMF detector that is capable of detecting DTMF signals quickly.

This patent is subject to a terminal disclaimer.

Method and apparatus for fast DTMF detection


The present invention relates to recombinant rhesus cytomegalovirus (RhCMV) and human cytomegalovirus (HCMV) vectors encoding heterologous antigens, such as pathogen-specific antigens or tumor antigens, which may be used, for example, for the treatment or prevention of infectious disease or cancer. The recombinant RhCMV or HCMV vectors elicit and maintain high level cellular immune responses specific for the heterologous antigen while including deletions in one or more genes essential or augmenting for CMV replication, dissemination or spread.

Since the emergence of the AIDS epidemic in the early 1980s, investigators have been focused on the development of an effective vaccine for HIV. However, this effort has been wrought with difficulties for a variety of reasons, including 1) explosive initial HIV replication causing rapid systemic infection, 2) potent genetic mechanisms mediating innate and adaptive immune evasion, 3) genetic malleability and immune escape, 4) host immune suppression, and 5) the ability of HIV to integrate within the host genome and latently infect long-lived cells. These inherent characteristics of HIV have made it difficult to use traditional vaccine approaches to generate a protective immune response using HIV antigens either expressed as recombinant proteins or in combination with non-replicating viral vector expression systems (prime-boost) (Barouch, D. H. 2008. Challenges in the development of an HIV-1 vaccine. Nature 455:613-619). One of the goals of this project is to generate an effective and safe HIV vaccine using HCMV as a vaccine vector.
CMV is an ubiquitous virus and a member of the beta subclass of the herpesvirus family. It is a large, double stranded DNA virus (genome of approximately 230 kB) that establishes life-long latent or persistent infection. In developed countries such as the United States, approximately 70% of the population is infected by HCMV depending on socioeconomic status. In contrast to gamma herpesviruses such as Epstein-Barr virus and Kaposi's sarcoma-associated herpesvirus, HCMV is non-transforming and non-oncogenic. A live, attenuated CMV vaccine (based on the human CMV Towne strain, which lacks a portion of the CMV genome) has been administered by subcutaneous injection to over 800 subjects in a phase II and III safety and efficacy trials (Arvin et al. 2004 Clin. Infect. Dis. 39:233-239). While this vaccine was found to be safe, it was not completely efficacious. More recently, in an attempt to increase its efficacy, some of the missing genes in the Towne-based vaccine strain were replaced. This vaccine has been tested in phase II safety studies, and was found to be safe (Arvin et al. 2004, Clin. Infect. Dis. 39:233-239).
Although HCMV is generally benign in healthy individuals, the virus can cause devastating disease in immunocompromised populations resulting in high morbidity and mortality (for review, see (Pass, R. F. 2001. Cytomegalovirus, p. 2675-2705. In P. M. H. David M. Knipe, Diane E. Griffin, Robert A. Lamb Malcolm A. Martin, Bernard Roizman and Stephen E. Straus (ed.), Fields Virology, 4th ed. Lippincott Williams & Wilkins, Philadelphia and Kenneson, A., and Cannon, M. J. 2007. Review and meta-analysis of the epidemiology of congenital cytomegalovirus (CMV) infection. Rev Med Virol 17:253-276)). Recent increases in the number of patients undergoing immunosuppressive therapy following solid organ (SOT) or allogeneic hematopoietic cell transplantation (HCT), as well as the expanded use of HCT for diseases such as sickle cell anemia, multiple sclerosis and solid cancers have increased the number of patient populations susceptible to HCMV disease (Chou, S. 1999. Transpl Infect Dis 1:105-14, Nichols, W. G., and M. Boeckh. 2000. J Clin Virol 16:25-40 and Sepkowitz, K. A. 2002. Clin Infect Dis 34:1098-107). HCMV is also the most common congenital viral infection, and the leading infectious cause of central nervous system maldevelopment in neonates (Fowler, K. B. et al. 1997. J Pediatr 130:624-30, Larke, R. P. et al. 1980. J Infect Dis 142:647-53 and Peckham, C. S. et al. 1983. Lancet 1:1352-5). In this regard, HCMV is considered the major cause of sensorineural deafness in neonates independent of infectious status (Fowler, K. B. et al. 1997. J Pediatr 130:624-30). HCMV therefore remains a major cause of mortality in multiple patient populations emphasizing the need for new antiviral pharmacologic and vaccine strategies. Immunity induced by natural wild-type (WT) CMV infection has consistently been shown unable to prevent CMV re-infection (see below). This unique characteristic of CMV presumably explains the poor efficacy of candidate vaccines in trials to prevent CMV infection (Pass, R. F. et al. 2009. N Engl J Med 360:1191-9). Nevertheless, immunity to HCMV acquired through natural infection has been shown to significantly decrease maternal to fetal transmission of HCMV during pregnancy. This observation would indicate that induction of an immunity in pregnant women that is comparable to that induced by natural CMV infection, but that is induced in a safe manner, may be able to decrease maternal to fetal transmission and have a significant impact on clinical CMV disease in the neonate. HCMV-specific T cell immunity has also been shown to afford protection against CMV disease in transplant patients, presenting another population wherein the ability to safely induce an immunity comparable to that acquired by natural CMV infection would have a clinical impact on CMV disease (Leen, A. M., and H. E. Heslop. 2008. Br J Haematol 143:169-79, Riddell, S. R., and P. D. Greenberg. 2000. J Antimicrob Chemother 45 Suppl T3:35-43 and Riddell, S. R. et al. 1994. Bone Marrow Transplantation 14:78-84). Cytomegalovirus is highly immunogenic, but has evolved immune evasion mechanisms to enable virus persistence and re-infection of the sero-positive host:
The immunological resources specifically devoted to controlling HCMV infection are enormous, with CMV being one of the most immunogenic viruses known. High antibody titers are directed against the main HCMV envelope glycoprotein (gB) during primary infection of healthy individuals (Alberola, J. et al. 2000. J Clin Virol 16:113-22 and Rasmussen, L. et al. 1991. J Infect Dis 164:835-42), and against multiple viral proteins (both structural and non-structural) during MCMV infection of mice (Farrell, H. E., and G. R. Shellam. 1989. J Gen Virol 70 (Pt 10):2573-86). A large proportion of the host T cell repertoire is also directed against CMV antigens, with 5-10 fold higher median CD4+ T cell response frequencies to HCMV than to acute viruses (measles, mumps, influenza, adenovirus) or even other persistent viruses such as herpes simplex and varicella-zoster viruses (Sylwester, A. W. et al. 2005. J Exp Med 202:673-85). A high frequency of CD8+ responses to defined HCMV epitopes or proteins is also commonly observed (Gillespie, G. M. et al. 2000. J Virol 74:8140-50, Kern, F. et al. 2002. J Infect Dis 185:1709-16, Kern, F. et al. 1999. Eur J Immunol 29:2908-15, Kern, F. et al. 1999. J Virol 73:8179-84 and Sylwester, A. W. et al. 2005. J Exp Med 202:673-85). In a large-scale human study quantifying CD4+ and CD8+ T cell responses to the entire HCMV genome, the mean frequencies of CMV-specific CD4+ and CD8+ T cells exceeded 10% of the memory population for both subsets (Sylwester, A. W. et al. 2005. J Exp Med 202:673-85). In an embodiment of the invention, it was not unusual for CMV-specific T cells to account for >25% of the memory T cell repertoire of a specific individual or at specific tissue sites. The clinical importance of this high level of CMV-specific immunity is most clearly shown by the occurrence of multi-organ CMV disease in immune-suppressed individuals during transplantation, and the ability of adoptive transfer of T cells to protect these patients from CMV disease (Riddell, S. R. et al. 1994. Bone Marrow Transplantation 14:78-84).
In summary, despite the apparent safety of live, attenuated CMV vaccines, significant concerns remain with live CMV-based vaccine strategies. Given the problems that can arise in immunosuppressed individuals, such as AIDS patients, organ transplant recipients, or infants who were infected in utero and that potential recipients of a CMV-based vaccine may be or become immunodeficient, significantly limiting the utility of a live CMV vaccine. Thus, a continuing need exists for a CMV vaccine vector that is safe and efficacious in all individuals.
Citation or identification of any document in this application is not an admission that such document is available as prior art to the present invention.

Recombinant HCMV and RHCMV vectors and uses thereof


A connector for a flexible printed circuit board or flexible flat cable includes an insulator having an insertion opening for a flexible printed circuit board or a flexible flat cable, a plurality of contacts supported by the insulator, contact leg portions formed on the contacts, which come into elastic contact with an upper or lower inner surface of the insertion opening in the insertion direction, and a pusher which is adapted to elastically deform the contact leg portions to disconnect the latter from the inner surface of the insertion opening.

1. Field of the Invention
The present invention relates to a connector for connecting a flexible printed circuit (FPC) board or a flexible flat cable (FFC) to a group of contacts.
2. Description of Related Art
In general, a conventional connector for an FPC board or FFC (referred to as an FPC/FFC connector) is essentially comprised of an insulator having a group of contacts (contact group), and a slider. The insulator is provided with an insertion opening for a slider, opposed to the contact group. When the slider is inserted in the opening after the FPC/FFC has been inserted therein, contact pressure is produced between the FPC board or FFC and the contacts. There are two major types of connectors, i.e., a first type in which the slider is linearly inserted in the opening of the insulator and a second type in which the slider is inserted in the insertion opening by the rotational movement of the slider. In either type, it has been considered necessary to insert both the FPC and the slider in the insertion opening of the insulator.

Connector for a flexible printed circuit board or a flexible flat cable


Link protein and cartilage matrix protein, which are two major components of the extracellular cartilage matrix, have been found to bind to each other. Cartilaginous tissue is attached to a surface by anchoring on the surface a fragment of cartilage matrix protein capable of binding to link protein or to collagen and link protein, or a fragment of link protein capable of binding to cartilage matrix protein or to cartilage matrix protein and a complex or proteoglycan and hyaluronic acid, and contacting the surface with cartilaginous tissue. Cartilage matrix protein is attached to a surface by anchoring on the surface a fragment of link protein capable of binding to cartilage matrix protein, and contacting the surface with cartilage matrix protein. Link protein is attached to a surface by anchoring on the surface a fragment of cartilage matrix protein capable of binding to link protein, and contacting the surface with link protein. Human cartilage matrix protein, link protein and fragments thereof are used, and the fragments may be recombinantly made. A recombinant fusion polypeptide is prepared that contains the fragments of cartilage matrix protein and link protein. The fragments or fusion polypeptide can be administered for repair of diseased or injured cartilaginous and non-cartilaginous tissue by promoting the binding of a complex of proteoglycan and hyaluronic acid to collagen. The fragments or fusion polypeptide can also be anchored to the surface of a prosthetic device, implant or tissue graft to promote adherence of tissue and biocompatibility.

The invention relates to the extracellular matrix of cartilage, and more specifically to cartilage matrix protein (CMP) and link protein (LP).
Connective tissues, in general, have an abundant extracellular matrix, synthesized and maintained by specialized cells. The interactions among these cells, the uniquely combined extracellular matrix components, and the water, electrolytes, and proteins in the extracellular fluid of each type of connective tissue determine the tissue's functional characteristics.
In cartilage, one major component of the extracellular matrix is the collagen fibril. As the principal tensile element, the collagen fibril plays a key role in the structural stabilization of cartilaginous tissues. The fibril consists of a core of type XI collagen surrounded by type II collagen, and on the periphery there is type IX collagen covalently attached to the type II collagen (Mendler et al. J. Cell Biol. 108:191-197, 1989).
Several non-collagenous proteins that interact with collagen fibrils, including decorin (Vogel et al., Coll. Rel. Res. 7:104-114, 1987), cartilage matrix protein (CMP) (Paulsson et al., Biochem. J. 197:367-375, 1981; Winterbottom et al., Dev. Dynamics 193:266-276, 1992), fibromodulin (Hedbom et al., J. Biol. Chem. 264:6898-6905, 1989) and collagen binding protein (Chandrasekhar et al., Proc. Natl. Acad. Sci. USA 83:5126-5130, 1986), have also been described. The role of these proteins in the organization of the fibrils is not clear, although it has been recently reported that CMP binds to type II collagen (Winterbottom et al., supra).
CMP is a homotrimer of disulfide bond linked subunits, and contains a domain with significant homology to epidermal growth factor, and two homologous repeat sequences (CMP-1 and CMP-2) which have homology to regions within von Willebrand's factor, complement factor B, complement factor C2, Type VI collagen, and the a chains of the integrins Mac-1, p150,95 and LFA-1 (Kiss et al., J. Biol. Chem. 264:8126, 1989; Argraves et al. Proc. Natl. Acad. Sci. USA 84:464, 1987). These repeat sequences have been reported to contain the regions responsible for collagen binding (Winterbottom et al., supra).
Most of the extracellular space between the collagen fibrils is occupied by the second major component of the cartilage extracellular matrix, the ternary complex, which is composed of monomers of the large cartilage proteoglycan, aggrecan, link protein (LP), and hyaluronic acid (HA). The polyanionic glycosaminoglycan side chains of each aggrecan monomer are covalent modifications of the core protein and restrain large volumes of water and ions within the matrix, thus providing the shock-absorbing properties of the cartilage tissue (Hascall, J. Supramol. Struc. 7:101-120, 1970). As many as 100 aggrecan monomers bind to a single HA polymer through amino acid residues contained in the amino-terminal globular domain. These interactions are stabilized by the binding of a single molecule of LP independently to both aggrecan and HA (Hascall, in Biology of Carbohydrates, Vol 1., pp. 1-49, ed. Ginsberg, C., Wiley, N.Y., 1981).
The amino acid sequence of LP has revealed that this protein is composed of an NH.sub.2 -terminal domain which possesses homology with immunoglobulin like proteins (Bonnet et al., Biochem. Biophys. Acta. 873:152, 1986) and two tandemly repeated sequences that have homology with the HA-binding region of aggrecan (Deak et al. Proc. Acad. Sci. USA 83:3766, 1986; Doege et al., Proc. Acad. Sci. USA 83;3761, 1986; Neame et al., J. Biol. Chem. 261:3519, 1986). Based on this sequence homology it has been suggested that these tandemly repeated sequences contain the sites for interaction with HA (Deak et al., supra; Neame et al., J. Biol. Chem. 260:12402, 1985; Goetinck et al., J. Cell Biol. 105:2403, 1987). In addition to being present in large amounts in cartilage, LP has also been found in a number of embryonic tissues including aorta, dorsal skin, kidney, and eyes, as well as in the connective tissue along the entire digestive tract (Gardell et al., BBRC 95:1823, 1980; Stirpe et al., Dev. Biol. 137:419, 1990; Poole et al., J. Cell Biol. 93:910, 1982; Ripellino et al., J. Cell Biol. 108:1899, 1989; Binette et al., Mol. Biol. Cell 3:224, 1992). It has been proposed that the presence of LP in a wide variety of tissues indicates that this protein may also play a role in the stabilization of the extracellular matrix of non-cartilaginous tissues (Binnette et al., supra).
To date, the nature of the macromolecular interactions between the major components of the extracellular matrix of cartilage and non-cartilaginous tissues are unknown, but it has been recognized that this interaction is critical for the growth and maintenance of these tissues.

Method for attaching cartilaginous tissue, cartilage matrix protein or link protein to a surface


The specification describes an interconnect strategy for memory chip packages to reduce or eliminate alpha particle contamination from the use of high lead solder interconnections in the vicinity of semiconductor memory cells. In the primary embodiment a high tin solder is recommended. A multi-layer under bump metallization is described that is compatible with high tin solders and flip-chip solder bump technology.

The susceptibility of dynamic random access (DRAM) and static random access (SRAM) devices to alpha particle degradation has long been recognized. The problem was discovered early in the evolution of semiconductor memory devices but has become severe since the advent of very high density MOS transistor memory arrays. These arrays store data in the form of electrons or holes (usually electrons in n-channel devices) and a very few charges represent a data bit in a very high density array. Thus a single alpha particle "hit" in a storage capacitor of one of these devices will generate enough hole-electron pairs that the charge state of a capacitor in e.g. the "zero" state (no charge) will be read as a "one".
A variety of approaches have been used for protecting these devices from alpha particle exposure, typically from alpha particle sites outside the device package. Thus packaging designs are known which shield the package contents, i.e. the memory arrays, from alpha particle exposure. It has also been recognized that certain types of device packages, e.g. certain metal containers, can be sources of alpha particle contamination and either are to be avoided, or steps taken to insulate the chip from the alpha particle source. Generally, the art of memory chip packaging is well developed and the conventional memory chip packages are largely free of alpha particle problems.
Standard memory chip packages, which now have essentially proven alpha particle immunity, are dual in-line packages, and more recently, surface mount quad packages. Both of these device packages often use solder connection between the leads or pads on the encapsulated IC, and printed wiring boards or other interconnect substrates. Typically the solder is standard lead-tin solder.
The conventional memory packages, i.e. die- and wire-bonded leaded packages, impose a cost in terms of performance and size that is now being seen as too high for certain applications, and more sophisticated memory chip packaging approaches are sought. For many years the trend in semiconductor device and package design was in ever higher levels of integration, which in memory technology took the form of integrating memory and logic on the same chip. Power modules and driver circuits are conventionally part of DRAM and SRAM devices, and many memory device designs have application specific logic embedded with the memory arrays on a common chip. However, while logic and memory semiconductor elements share many common features, there are differences. For example, a critical feature of a memory element is the storage capacitor. This element must be made optimally small, and essentially without defects or leakage. Logic devices have no comparable element, and are more forgiving in some device aspects. Consequently a wafer fabrication process that is tailored for memory device optimization is not usually optimum for logic devices. Thus, compromises are made in order to have different device species on the same semiconductor chip.
Current developments are proceeding in the direction of "disintegration", where memory devices consist mainly of memory cells, and the "on-board" logic and other transistors are put on another chip. These chips can be processed optimally for the size and nature of their components. In this technology, the "integration" is performed at the package level, and the key to its success is a packaging technology that produces a final product that is superior to a chip integrated system in performance and cost, and at least comparable in size.
A leading candidate for this packaging technology is flip chip bonding and assembly. Flip chip bonding is a well developed technology and is characterized by bonding bare silicon IC die upside down on an interconnect substrate such as a printed wiring board. Several bonding techniques have been developed, e.g. ball bonding, ball grid array (BGA--a form of ball bonding), and solder bump bonding. These techniques lead to reduced I/O pitch through smaller contact surfaces, and area rather than perimeter interconnection arrays. Moreover, electrical performance is enhanced because lead lengths are reduced. Typically, the bonding method in these techniques is solder bonding.
We have recognized that the miniaturization of interconnections in these advanced technologies introduces new and unexpected consequences. Essentially unknown to the developers of wire bonds, and extended leads typical of through mounted and surface mounted packages, is that the leads in these techniques are inherently long enough to provide beneficial isolation of the active circuit elements, i.e. transistors, from alpha particle sources in the solder interconnections. As those leads are shortened, as they are in the improved technologies described above, the active elements of the ICs are brought closer to the solder interconnections. We have recognized that a consequence of very close proximity of a solder interconnection to a susceptible IC component is that alpha particles emitted from the solder can impact the semiconductor substrate in the vicinity of the active element and cause alpha particle damage as described earlier. The alpha particle problem is most severe when the interconnection comprises a lead based solder.
One approach to overcoming the alpha particle problem is to locate the I/O leads far enough away from the susceptible circuit elements to spatially isolate the latter from alpha particles emitted from the solder. To some extent this is achievable in large packages with perimeter I/O pads. However, in the new packaging technologies of interest to state of the art designers, the best interconnection approaches use area arrays of I/O pads, where I/O pads are located directly adjacent potentially susceptible circuit elements. Moreover, even perimeter I/O pads are situated very close to active elements in the very small packages currently being designed.


A valve characteristic control apparatus is provided with a simple structure in which a cam shaft having three-dimensional cams is axially displaced and the cam shaft is rotated with respect to a crank shaft by a ring gear. An axial driving mechanism axially displaces the intake cam shaft and thereby changes working angles of the three-dimensional cams. In this case, engagement of a spline formed on the cam shaft with teeth formed on an inner peripheral surface of the ring gear allows the cam shaft to axially move with respect to a pulley integrated with the crank shaft. A rotational driving mechanism axially displaces the ring gear, so that a helical spline formed on the pulley engages teeth formed on an outer peripheral surface of the ring gear and a spline formed on the cam shaft engages teeth formed on the inner peripheral surface of the ring gear. Thus, the cam shaft rotates relative to the pulley.

1. Field of the Invention
The present invention relates to a valve characteristic control apparatus for an internal combustion engine which controls valve characteristics such as valve timing (timing and phase for opening and closing a valve), valve opening time period (cam working angle), valve lift amount and the like.
2. Description of the Related Art
In order to achieve the optimal valve characteristic in accordance with the operating conditions of a vehicle engine, various mechanisms capable of changing the characteristics of a valve train have recently been developed and put to practical use. The valve characteristics include valve timing, valve opening time period, valve lift amount and the like. In order to change at least one of the aforementioned valve characteristics, there has been devised a valve train for changing rotational phase of a cam shaft relative to a crank shaft consecutively or in two steps (ON/OFF control), a valve train selectively using a plurality of cams having different profiles, a valve train for axially displacing a cam shaft having three-dimensional cams (solid cams) whose profile changes in the axial direction of the cam shaft, and the like. In an internal combustion engine equipped with a valve characteristic control apparatus as described above, the valve characteristic control is performed in accordance with the operating conditions of the engine in the light of intake efficiency and exhaust gas recirculation. A sufficient intake efficiency contributes to enhancement of engine power, and the exhaust gas recirculation brings about an improvement in the capacity for purging emission substances based on a reduction in NO.sub.x and an improvement in fuel consumption based on a reduction in pumping loss.
For example, Japanese Patent Application No. SHOU 55-87833 discloses a valve characteristic control apparatus for axially displacing a cam shaft having three-dimensional cams, which make it possible to change valve opening time period (cam working angle), valve lift amount and the like. Japanese Patent Application No. HEI 7-139327 discloses a valve characteristic control apparatus for consecutively changing valve timing by shifting a rotational phase of a cam shaft relative to a timing pulley. In this apparatus, the timing pulley is rotatably driven by a timing belt to which rotation of a crank shaft is transmitted. The timing pulley is connected via a ring gear to a cam shaft for driving valves. Formed on inner and outer peripheral surfaces of the ring gear are helical splines (longitudinally extending twisted grooves). A movable piston integrated with the ring gear is hydraulically driven to be displaced in the axial direction so that the cam shaft rotates relative to the timing pulley.
By combining the variable valve train employing three-dimensional cams with the variable valve train employing a ring gear, the valve characteristics including valve timing, valve lift amount and cam working angle can be controlled with a degree of freedom higher than in the conventional art. However, the apparatus with such a combination is bulky, complicated in structure and thus unsuitable for practical use.

Valve control apparatus for an internal combustion engine


A non-volatile semiconductor memory wherein in a semiconductor substrate at both sides of a gate structure, a source diffusion layer and drain diffusion layer having an opposite conductivity type impurity to that of the substrate are provided with a high impurity concentration and a threshold value of a transistor is changed by holding charges in an insulating film in the gate structure, an outer diffusion layer having the same conductivity type impurity as that of the substrate and the impurity concentration higher than that of the substrate intervenes between the drain diffusion layer and the substrate.

The present invention relates to a non-volatile semiconductor memory in which a threshold value of a transistor is changed by holding charges in an insulating film in the gate structure.
Conventionally, such a non-volatile semiconductor memory, for example, an M O N O S (Metal-Oxide-Nitride-Oxide-Semiconductor) element has been known. The structure of the memory will be explained below the reference to FIG. 5. The M O N O S element shown in FIG. 5 includes a gate structure in which a tunnelling oxide film 2 of a thin silicon oxide film, a silicon nitride film 3 hereinafter referred to as merely nitride film, a silicon oxide film 4 hereinafter referred to as a top oxide film and a gate electrode 5 which is conducting layer of an N.sup.+ polysilicon layer, etc., are stacked in that order on a P type silicon substrate 1.
The writing of data in M O N O S element is carried out as follows. When a source S is grounded and a positive voltage is applied to the gate G and the drain D (voltage to the gate G is a little higher than to the drain D), respectively, a large electric field is generated near the drain diffusion layer 7. Consequently, electrons in the channel region are accelerated and a charge consisting of a number of electrons (hot electrons) having a high energy is generated. A part of the hot electron charge is drawn into the drain diffusion layer 7. Nevertheless, another part thereof is drawn into the nitride film 3 by tunnelling through the oxide film 2 and is locally held in the nitride film 3, which results in a state in which a threshold value is increased, namely, a state in which data are written is obtained.
The erasing of data from the M O N O S element is carried out as follows. When the source S is grounded, a negative voltage is applied to the gate G and a positive voltage is applied to the drain D, respectively, so that the bending of the energy band becomes large just below the gate on the surface of the drain diffusion layer 7, namely, and the tunnelling effect between bands is generated and holes (avalanche hot holes) are generated. A part of the charge of generated holes becomes a substrate current. Nevertheless, another part thereof is accelerated by the electric field just below the gate to be injected into the nitride film 3. Consequently, the negative charge held in the nitride film 3 is cancelled and the threshold value is reduced. In turn, a number of holes are generally injected into the nitride film 3 to provide a larger charge than the writing negative charge so that a so-called over erase state is generated. However, the residual charge of holes in the nitride film 3 is locally held at the drain side of the nitride film 3. Thus, the channel conduction between the source S and the drain D does not occur.
Reading of data from the M O N O S element is carried out by grounding the source S and applying a lower positive voltage to the gate G and the drain D than in the writing of the data. In this case, the voltage applied to the gate G is at a higher level. When the data is written, the channel from the source different layer 6 does not reach the drain diffusion layer 7 because of the influence of the negative charge held in the nitride film 3. Therefore, a state in which current does not flow between the source S and the drain D (a state in which the threshold value is increased) is obtained. Namely, 1 can be read. In a case where data is not written (erase), a state in which a channel is formed between the source diffusion layer 6 and the drain diffusion layer 7 and current flows (a state in which the threshold value is reduced) is obtained. Namely, O can be read.
Conventional memory devices having such structure, however, have the following problems.
The conventional problems will be explained with reference to FIG. 6. FIG. 6 is a diagram of a memory device in which the M O N O S elements of the type shown in FIG. 5 are connected in a matrix. In FIG. 6, n and n-1 are word lines connected to the gate G of each element, m-1, m, and m+1 are bit lines connected to the drain D of each element. The source S of each element is grounded. When the word line n and the bit line m are held at a high voltage level to write data into the element M1, negative charges are stored in the nitride film in the gate dielectric of the element M1 as mentioned above.
On the other hand, since in the element M2, a low level voltage is applied to the gate G and the high level voltage is applied to the drain D, a comparatively large electric field is generated near the drain and negative charges stored in the nitride film 3 are drawn into the drain or, on the contrary, a state in which the written data is disturbed (drain wring disturbance) is sometimes generated by the fact that the holes generated near the drain are injected into the nitride film 3.
Further, in the elements M3 and M4, since the high level voltage is applied to the gate G, a state in which negative charges stored in the nitride film 3 are drawn into the word line n through the gate electrode 5 (gate writing disturbance) is sometimes generated in the element M3 and in turn, an error writing problem may be generated in the element M4 because negative charges in the channel region are injected into the nitride film 3.
Additionally, when the channel length becomes short by miniaturization of the element and a high level voltage is applied to the drain D, the depletion layer extending from the drain diffusion layer 7 reaches the source diffusion layer 6. Thus, the punch through current is increased and a reading error may be generated.

Non-volatile semiconductor memory with outer drain diffusion layer


A facility comprising systems, methods, and techniques for collecting data indicative of energy consumption and/or energy production by energy systems and devices and providing the data to interested users and devices in real-time is described. The facility may comprise an energy gateway device coupled to one or more monitored devices, one or more energy data extraction servers, and one or more client computers. The energy gateway devices and energy data extraction servers are coupled to a network and are configured to collect energy consumption and/or energy production data from one or more devices and provide an indication of the collected data in real-time or near real-time. The facility may collect current energy consumption or production rates, predicted energy consumption or production levels over a future period of time, and/or amounts of energy that has been consumed or produced by the device over a previous period of time.

As non-renewable energy resources are being depleted and energy costs become increasingly more expensive and volatile, consumers continue to seek out ways to monitor and reduce their energy consumption and energy costs. Energy systems often include energy-consuming devices (i.e., devices configured to consume more energy than they produce) and energy-producing devices (i.e., devices configured to produce more energy than they consume). An intelligent system for monitoring the consumption and/or production of energy by energy systems and devices and providing data indicative of the monitored consumption and/or production to local and remote devices is desired.

Real-time monitoring and dissemination of energy consumption and production data


An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that utilizes a carbon nanotube channel region and nanocrystal charge storage regions. Such a combination enables a combination of low power, low read and write voltages, high charge retention, and high bit density. An embodiment further exhibits a large memory window and a single-electron drain current.

Memory manufacturers are currently researching and developing the next generation of memory devices. One such development includes technology designed to replace current volatile and non-volatile memory technologies. Important elements of a successor include compactness, low price, low power operation, non-volatility, high density, fast read and write cycles, and long life.
Current memory technology is predicted to survive into 65 nanometer process generations. This survival is in part based on the successful integration of, for example, exotic storage, source and drain engineering, copper and low dielectric constant materials for the interconnect levels, and high dielectric constant materials for transistor gates. However, there will thereafter exist a need for new memory materials and technology, particularly for non-volatile memory.
As is well known in the art, Flash memory utilizes a floating gate to store charge indicative of a logical "0" or logical "1" memory state. The floating gate is located between a control gate and a substrate, and relies on hot electron injection and Fowler-Nordheim electron tunneling through a thin tunneling oxide between the floating gate and the substrate for charge injection. An electrical potential, usually between 10 and 13 volts, can be applied to the control gate to excite electrons through the tunneling oxide layer into the floating gate where they are thereafter trapped. The trapped electrons provide excess potential in addition to the potential applied at the control gate. Hence the current through the transistor channel in the substrate is a function of both the control gate voltage and the presence/absence of charge in the floating gate. In other words, the compounded effect of the stored charge and the control gate voltage sets the resistance in the current channel, controlling the current flow through it. A cell sensor (external circuitry) monitors the potential drop across the current channel in the substrate which is controlled by the resistance of the channel to the current flow. If, for example, the resistance through the gate is greater than a set threshold value in Ohms, it has a logical value of "1." If the resistance drops below the threshold, the logical value changes to "0." The non-volatility of the memory depends on how securely the electrons are trapped in the floating gate. Among other defects, weak spots in the tunneling oxide (in particular as the tunneling oxide thickness decreases) may enable a filament current that will discharge the entire floating gate and render the device useless as a non-volatile memory element as the floating gate will be unable to store charge for any useful duration which leads to product reliability concerns.
Nanocrystals have been introduced as a paradigm to increase tunneling oxide reliability of Flash memory by dividing a monolithic floating gate into a set of discretely spaced floating gates. In the event of a weak spot or defect in the tunneling dielectric, this discreteness allows the discharge of only the floating gate directly over the defect. The rest of the floating gates are unaffected by the defect instead of the catastrophic leakage of all stored charge from a monolithic floating gate.
Another paradigm shift involves the use of carbon nanotubes in electronic applications. In particular, single-walled carbon nanotubes (SWNTs) are nanometer scale cylindrical tubes that are rolled from a single graphene sheet that can either be grown from a carbon source with the help of a catalyst. Nanotubes can have various crystal orientations and diameters which produces a variety of electronic band structures. Thus, SWNT can either metallic or semiconducting. As a semiconductor, a SWNT or multiple SWNTs can replace the semiconductor (e.g., silicon substrate) in a metal oxide semiconductor field effect transistor (MOSFET) structure. Such devices are also called carbon nanotube field effect transistors (CNFETs). However, while the promise of SWNTs in electronics applications theoretically impressive, SWNT-based electronic manufacturability offers significant hurdles to commercial practicability.

Nanotube- and nanocrystal-based non-volatile memory


In an embodiment a ceramic material includes ZnO as main constituent, Y as a first additive, second additives including at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Cr, Co, Mn, Ni and Sb, Si4+ as a first dopant and second dopants having at least one compound containing a metal cation from Al3+, B3+, or Ba2+, wherein a corresponds to a molar proportion of Bi calculated as Bi2O3, b corresponds to a molar proportion of Y calculated as Y2O3, c corresponds to a molar proportion of Al calculated as Al2O3, d corresponds to a molar proportion of Ba calculated as BaO, e corresponds to a molar proportion of B calculated as B2O3, f corresponds to a molar proportion of Si calculated as SiO2, g corresponds to a molar proportion of Ni calculated as NiO, h corresponds to a molar proportion of Co calculated as Co3O4, i corresponds to a molar proportion of Cr calculated as Cr2O3, j corresponds to a molar proportion of Sb calculated as Sb2O3, and k corresponds to a molar proportion of Mn calculated as Mn3O4.

Monolithic and multilayer varistors based on ZnO ceramics are widely used components for protection from overvoltages. Owing to ever increasing demands in the area of performance and miniaturization of such components, it is necessary to ever further increase the specific varistor voltage (≥100 V/mm). Particularly in the field of multilayer varistors, it would thus be possible to achieve more active layers for the same active volume, which in turn increase the active area, by means of which higher currents can be dissipated. It would also be possible to achieve higher input voltages of the multilayer varistor for the same layer thickness, for example, in the region of 230 V mains voltage. Furthermore, an increase in the specific varistor voltage means that lower layer thicknesses are necessary to obtain a given input voltage.
Since the specific varistor voltage increases with the number of series-connected grain boundaries of ZnO grains between the contacts of the varistor, one option to increase the specific varistor voltage in a given volume is to reduce the size of the ZnO grains and hence to increase the number of series-connected grain boundaries in a given volume.
German Patent Application No. DE 199 15 661 A1 discloses a multilayer varistor in which the average grain size of the ZnO grains in the ceramic body of the varistor is within a range between 0.9 m and 3.0 μm inclusive and which has a specific varistor voltage of ≥1000 V/mm. Owing to the relatively large amount of additives used that permit the sintering of the ceramic body at relatively low temperatures (850-900° C.), it is difficult to limit the grain growth of the ZnO grains during the sintering, and there is an increased probability of occurrence of inactive secondary phases, especially B2O3.
German Patent Application No. DE 10 2016 104 990 A1 discloses a process for producing a monolithic varistor comprising a ceramic body, in which a smaller amount of additives (≤5% based on 100 mol % of ZnO) is used for production of the ceramic body. This limits grain growth and reduces the occurrence of inactive secondary phases. The varistor thus obtained has a specific varistor voltage of only 640 V/mm at most.

Ceramic material, varistor, and method for producing the ceramic material and the varistor


A container preassembly which has an inner sleeve in a flat unopened position disposed within an outer sleeve in a flat unopened position, where in the inner sleeve is substantially shorter than the outer sleeve. The two sleeves are adapted for form the top and bottom ends of the final opened container. The inner sleeve is cut so that gaps at the top of the inner sleeve form notches at the corners of the final opened container. The shorter outer sleeve rests on these notches preventing the pieces from shifting during the manufacturing process and to allow the preassembly to be folded into the final container using current machine technology.

1. Statement of the Technical Field
The invention pertains to containers used for packaging, shipping, and displaying goods. More particularly, the invention relates to containers formed from at least two sections.
2. Description of the Related Art
Two piece containers are extremely popular and in widespread use. Typical two piece containers have separate top and bottom sections formed from separate blanks. A first section has side walls and flaps for forming the container's bottom. A second section has side walls and flaps for forming the top, and fits over the side walls of the bottom section to enclose the interior of the container. These top and bottom sections are sometimes referred to as half slotted containers since both are necessary to form a single fully enclosed container. In contrast, a regular slotted container is formed from a single blank section having both bottom and top forming flaps.
Two piece containers are extremely useful for packaging, storing, shipping, and displaying goods. After the goods are placed into the interior of the bottom section, the top section is placed over the bottom section to fully enclose the contents. The top and bottom sections can then be secured together for shipping.
Two piece containers are particularly useful as shipping-display containers. Used to package and ship goods for retail, the outside face of the bottom section can be printed and/or designed with promotional information suitable for display on the retail floor. The retailer simply removes the top section of the container and places the bottom display section containing the goods on the retail floor. Unlike regular slotted containers, no cutting or tearing of the container is required to open it. This type of container is very popular for food items which are easily displayed in the bottom display section.
One disadvantage of present two piece containers is the number of steps necessary to assemble the container. The user begins with the two separate container sections, both in a flat unfolded position. The bottom section is opened to form the sides and its flaps folded and secured to form the container bottom. The top piece is likewise opened and its flaps folded and secured to form the top. After the bottom section is loaded with the goods, the top section, slightly larger than the bottom, is placed over the bottom section to form a completely enclosed container. If desired, the two sections can be secured together.
U.S. Pat. No. 5,505,368 to Kanter et al., teaches a two section container with an inner sleeve and an outer sleeve, both adapted to form the two ends of the container in an aligned relationship of the final open container. This allows preassembly of a container, by an automated process, into a "knockdown" that may be opened to form the final container without requiring further adjustment. Once opened, the flaps for forming the container bottom are folded to create a container ready for use. This container has many advantages, but further improvements are believed possible. Such improvements would include using less material to create less waste while lowering costs, and also maintaining strength while using less material.


The invention relates to an input circuit for a logic circuit part, comprising a voltage converter component for conversion of a mains voltage to the required low voltage in order to supply a user with a low voltage. The supply to the input circuit may hence be connected to a mains supply to rectify the mains voltage and an output from the input circuit may be connected to the voltage converter component to provide a rectified input voltage for the voltage converter component. According to the invention, an improved input circuit for a logic circuit part with improved functionality and operating security also permitting an extensive miniaturization and simplified production may be achieved by replacement of at least two of the remaining four diodes in the rectifier part of an input circuit for a logic circuit part by two controllable switches which work as a synchronous rectifier and are connected such as to be switched on and off by alternate forced control.

The invention relates to an input circuit for a switched-mode power supply, comprising a voltage transformer unit for transforming a mains voltage to the required low voltage in order to supply a consumer with a low voltage. An input of the input circuit is connectable to the mains voltage to rectify the mains voltage, and an output of the input circuit is connectable to the voltage transformer unit to provide a rectified input voltage for the voltage transformer unit.
Modern switched-mode power supplies in the low-power field, e.g. chargers for mobile phones and the like, have been substantially reduced in size by now due to a number of innovations with respect to the components and circuit technology. The dimensions and the weight are of major importance specifically for travelers. Therefore, one focal point in today's advancements is on miniaturizing the function of such a switched-mode power supply to an extent that allows, in the ideal case, its integration into the terminal device. Due to the high cost pressure along with the fulfillment of pertinent safety standards specifically the input wiring on the primary side of such a switched-mode power supply was more and more reduced with respect to size and the number of components and, in known configurations, is nowadays substantially formed of a fuse resistor, a bridge rectifier and a Π-filter.
FIG. 1 shows a circuit according to the prior art with the characteristic values for a 3 W switched-mode power supply. Moreover, the parasitic elements are illustrated. In this input wiring, the resistor Rlimit fulfills several functions: It allows a starting current limitation to values below the maximum surge current Isurge of the four diodes of the rectifier. It fulfills a safety function by permitting a defined release behavior if the power supply breaks down, and it reduces the pulse voltage for the power supply in transients.
Apart from the mechanical dimensions of the rectifier diodes (or a function-compatible bridge rectifier), which are in conflict with a desired miniaturization, the input wiring shown in FIG. 1 has some more disadvantages. On the one hand, the electrical load on the input wiring during the start-up leads to a reduction in reliability and service life. On the other hand, the function of the resistor Rlimit per se is not reversible, so that an ongoing use of the switched-mode power supply is no longer possible even if only a temporary malfunction has occurred. Moreover, the known configuration as shown in FIG. 1 is not at all protected against a short-term overvoltage of the mains, which occurs comparatively often in countries having a poor supply quality when operated by emergency power supplies.
Therefore, it is the object of the present invention to provide an improved input circuit for a switched-mode power supply which, apart from an increased functionality and operational safety, simultaneously permits an advanced miniaturization and simplified manufacturability.

Input circuit for a switch-mode power supply


A biomass fuel gasification chamber, blast tube, and heat exchange chamber are interconnected horizontally and subjected to negative drawing pressure by a large variable speed chimney fan. An auger with an air lock feeds biomass fuel automatically into the gasification chamber. Fuel is moved across the gasification chamber on a partially serrated sloping grate. Three stages of fuel activity are created: anaerobic heating for pyrolysis, combustion, and incandescent charcoal oxydation for gasification. A variable speed fan, variable flue, and directional air duct and baffles control the stages with underfire air. A programmed auger in an airtight chamber removes ash automatically. In large systems a hydraulic moving wedge floor assists the fuel feeding auger and a moving sloping grate moves the fuel. A fan and long preheating duct with baffles and fins inside the gasification chamber preheat and direct air into a blast tube leading from the gasification chamber. Openings from the preheating tube angled both longitudinally and transversely into the blast tube create turbulence in the blast tube directed away from the gasification chamber. Preheated directed air flow and the negative pressure of the chimney fan draw gases from the gasification chamber into the blast tube, crack the gases, and shoot a fire blast into the heat exchange chamber. The fire blast heats an external system. Particulates are removed producing a clean-emission exhaust gas. Temperature and air quality sensors in the chimney provide feedback signals to various system controls to maintain optimum operating conditions.

1. Technical Field
The present invention relates to heating systems with fuel treatment means for liberating gas from solid fuel and in particular to a controlled system and method for clean-emission variable biomass gasification and combustion.
2. Description of the Prior Art
Biomass waste provides an abundant source of fuel from what might otherwise be considered waste. In addition, the plant matter from which the biomass waste comes is a renewable resource. As long as trees and other plants are harvested ecologically they keep replacing themselves with new growth by the natural growth cycle in many forests or by replanting. In addition, using plant growth as fuel maintains the natural carbon cycle in a 100% balanced state, because the clean gasification and combustion of biomass fuel puts back into the environment the same amount of carbon that occurs in the natural decay of plants. The carbon is then taken in by the living plants. However, burning coal, oil and natural gas creates a carbon overload in the environment from the centuries of stored carbon suddenly released into the environment.
Sources for biomass waste in the form of wood chips include whole tree chips from forestry maintenance including tree tops and waste in forests, brush and tree cuttings from parks and roadways, lumber mill waste, woodworking waste, crushed palletts, and any other sources of disgarded wood or wood byproducts. Many other sources of biomass waste exist in other forms from landfill sites, municipal waste collection, waste from companies using plant matter in any form, paper waste, and many other sources. The community itself can become the source of fuel for the community's own plants burning biomass fuel.
The major problem with biomass fuel is the substantial creosote and smoke discharge normally associated with wood burning and biomass burning stoves and furnaces which burn at relatively low temperatures at low efficiency rates. As well as a pollution problem, this is a great waste or resources, because the "pollutants" given off by such stoves and furnaces are hydrocarbon gases and particulates which will all burn cleanly if burned in an efficient high temperature system.
Most stoves, furnaces, and power plants using wood and biomass fuel are set up to burn somewhat efficiently, but only with specific qualities of fuels, typically limited in an allowable range of moisture content and other criteria such as phosphate content, which creates ash. Finding sources of biomass waste that meet specific requirements of moisture content and other criteria consistently is a major problem that further limits the efficiency of other systems, thereby wasting fuel and creating considerable pollution.
In other systems, such as large power plants, burning at relatively high temperatures in very large chambers "gasification" and burning of some of the hydrocarbon gases occurs spontaneously because of the high temperatures created from a huge fire source, the explosiveness of blown-in fuel and the fact that pyrolytic gases remain in some locations within the huge chambers to eventually burn up. Because these systems are relatively static and uncontrolled they are designed for a very limited range of fuel types and qualities and therefore burn less efficiently than they were designed for much of the time because of variations in fuel quality and changing climatic conditions such as air pressure, air temperature and humidity.
Smaller scale systems such as furnaces for buildings and stoves for homes are generally less efficient than the large power plants because they don't develop the same level of gasification spontaneously, because in smaller chambers the gases generally don't remain in the system as long, the same high temperature conditions are usually not attained, and fuel sources are even less uniform than municipal systems with rigid fuel requirements.
Although some systems have some controls built in to vary air input through flues or with some provision for creating gasification and combustion of the pyrolytic gases, most systems are relatively static with no feedback means to monitor the efficiency of the system; so they fail to control the gasification and pyrolytic gas combustion for variations in fuel quality and climatic conditions. Most biomass and wood burning systems require considerable time and labor in monitoring and manual adjustments to maintain some level of efficiency, especially systems requiring manual loading of fuel and unloading of ash.
Most other biomass fuel chambers are vertically oriented with vertical stacking of the fuel and vertical release and combustion of gases. The vertical system lacks control and creates inefficient, irregular, and incomplete gasification and combustion of pyrolytic gases, producing considerable pollution and waste as well as using more fuel to produce less heat.

Controlled clean-emission biomass gasification heating system/method


A data storage system has a media cartridge library subsystem. The subsystem includes a cartridge storage array which has receptacles for removably receiving cartridge holding bins. Each bin stores a plurality of cartridges in slots. The slots are arranged to open to a transport system in the subsystem such that the bins held in the receptacles constitute a storage array of cartridges. Cartridges are inserted into and removed from the subsystem either by an IO bin or station or by removing and inserting cartridge containing bins. Cartridges are assignable to affinity groups; such affinity cartridges in an affinity group are stored in affinity bins. An affinity bin cannot be removed from the subsystem until all of the affinity cartridges assigned to the bin are present. Each of the bins and cartridges have bar code labels. A battery operated bar code read is transportable by the cartridge transport means for reading the bar code labels. An infrared communication system transmits information and control signals between the bar code reader and a control in the subsystem. Methods and apparatus for operating the subsystem are described.

To date, media libraries having automatic storage and retrieval capabilities have been limited to one type of media containing cartridge. For example, the Beach U.S. Pat. No. 3,831,197 shows a tape library which automatically stores and retrieves data-storing tape cartridges--all of the tape cartridges have the same physical outline shape. Similarly, other media library systems have the same limitation. Beach shows a travelling elevator system for fetching and storing cartridges from and to addressed compartments in the library storage array. Power and control is transmitted to the travelling elevator via a flexible flat cable.
In the last years there has been a proliferation of differently shaped media cartridges. For example, there are the well known VHS video cartridges, the 8 mm video cartridges, the 3.5 inch magnetic disk data-storing cartridges, the 3.5 and 5.25 inch optical media cartridges, differently sized and shaped magnetic tape cartridges, etc. Diverse optical media types are known, such as read-only (CD-ROMs, for example), write-once read-many (WORM) consisting of diverse media such as ablative, phase change, etc., and rewriteable media. Such rewriteable media includes the well known magnetic tapes and disks, magnetooptical disks, and the like. It is desired to enable using a single media library construction for accommodating a plurality of differently shaped information or data-storing cartridges in one modularly constructed library apparatus.

International Business Machines Corporation


In a multi-focusing type electron gun in which first through eighth electrodes and a shield cup are provided, the sixth electrode which forms the center of a second unipotential lens is formed by a primary electrode and a corresponding secondary electrode. The center aperture of the primary electrode has a larger inside diameter than lateral apertures thereof, which is equal to the inside diameter of the lateral apertures of the secondary electrode. The center aperture of the secondary electrode has a comparatively smaller inside diameter than the lateral apertures thereof but which is equal to the inside diameter of the lateral apertures of the primary electrode, so that a voltage difference of the second unipotential lens becomes uniform to obtain an expanded focus lens.

Color cathode ray tubes are, as shown in FIG. 4, have a bulb 8 formed by uniting a face plate 4 in which a fluorescent layer 2 is formed on the inside surface of a funnel 6. At the inside of a neck portion of bulb 8, there is received an electron gun 10 which emits R,G,B electron beams 12. The beams pass through apertures of a shadow mask 14 and then strike fluorescent layer 2 to form a picture element on a screen. A deflection yoke 16 disposed on the outside surface of the funnel 6 deflects the beams to form the picture on the screen.
The inline type electron gun for such color cathode ray tubes has advantages of being easily manufactured due to the simple structure in which R,G,B electron beams are transversely arranged in a line and omitting vertical dynamic convergence. However, this gun has the disadvantage of having serious spherical aberration of a focus lens for focusing the electron beams.
To reduce spherical aberration, it is well known that greater spacing between a pair of electrodes forming the focus lens creates an expanded focus lens. In this case, the greater the spacing between the pair of electrodes forming the focus lens, the smaller the spherical aberration is. However, when the spacing therebetween is excessively great, static electric charge generated from the periphery of the neck portion has influence on the focus lens to cause the electron beams misconvergence, which severely restricts the expanded focus lens of the inline type electron gun.
Thus, attempts at forming the expanded focus lens have been continued. One of them is described in U.S. Pat. No. 4,370,592 "Color Picture Tube having an Improved Inline electron Gun with an Expanded Focus Lens", issued to Richard H. Hughes on Jan. 25, 1983. FIG. 9 shows the main focus lens structure of the inline type electron gun provided in the U.S. Pat. No. 4,370,592. The electron gun of such method has R,G,B apertures 18.sub.R, 18.sub.G, 18.sub.B, 20.sub.R, 20.sub.G, 20.sub.B which are included in a pair of electrodes 18,20, facing each other and has a horizontal lens 22,24 which is formed by deep drawing at a predetermined depth from the opposing side of the two electrodes 18,20 at their peripheries, thereby, in practice, forming the expanded main focus lens without the influence of external static charge. The width of both horizontal lenses 22,24 is, in practice, determined by the lateral width D of the third electrode 18 and by the lateral width E of the fourth electrode 20. While the lateral width D,E is severely restricted by the inside diameter of the neck portion of the color cathode ray tube (CRT), in a practical manufacturing process, it is much restricted by the distance A between the axes of each aperture. That is, while the horizontal lens 22,24 can be used in a SS(small separation) type of 5.08 mm or in a MS(middle separation) type of 5.5-5.6 mm, it can not be used in a LS(large separation) type of more than 6.6 mm.
The reason for not applying the horizontal lens to the LS type will be described with reference to FIG. 6, which is a plan view of the fourth electrode 20. Each R,G,B electron beam E.sub.R,E.sub.G,E.sub.B which pass through each aperture 20.sub.R,20.sub.G,20.sub.B thereof is positioned at the center thereof. However, when the distance A between the axes of each aperture is more than 6.6 mm, the respective distance from the two side apertures 20.sub.R,20.sub.B to the two ends of the horizontal lens 24 becomes different from each other, whereby each horizontal focusing voltage between the central aperture the two side apertures is different.
The reason for the horizontal focusing voltage difference above is that the side apertures 20.sub.R, 20.sub.B are nearer the electrode 20 than the central aperture 20.sub.G, whereby the side apertures have higher potential than the center aperture. For the same reason as above, the two side apertures 20.sub.R,20.sub.B have a partial or local difference between the horizontal and vertical focusing voltage, whereby the picture element formed on the screen is distorted.
To solve such problems caused by the expanded focus lens as described above, the multi-focusing type electron gun of a uni-uni-bipotential lens arrangement as shown in FIG. 7 has been used in practice. Such electron gun is formed such that a cathode K, an electrode assembly formed by first to eighth electrodes 26 to 40, and a shield cup 42 are successively arranged. A screen voltage Vs of 0-1 Kv is applied to the second, fourth and sixth electrode 28,32,36, a focus voltage Vf of 0-10 Kv is applied to the third, fifth and seventh electrodes 30,34,38, a voltage of 0--100 Kv is applied to the first electrode 26 and 0-30 Kv high voltage is applied to the eighth electrode 40 and the shield cup 42. Accordingly, the third, fourth and fifth electrode 30,32,34 form a unipotential lens SL1, the fifth, sixth and seventh electrode 34,36,38 form a second unipotential lens SL2 and the seventh and eighth 38,40 form a bipotential lens ML.
The uni-uni-bipotential type electron gun can optically be explained with reference to FIG. 8, wherein a solid line indicates that the first emitting angle .theta..sub.1 of the electron beam becomes small when the first unipotential lens SL1 is larger than the second unipotential lens SL2. As a result, since the electron beam which passes through the first lens centrally enters the axis of the second lens, the second emitting angle .theta..sub.2 becomes relatively small for the beam to have a comparatively small inside diameter r. By contrary, a dotted line reveals that, since the first emitting angle .theta..sub.1, becomes large when the first lens SL1' is formed less weakly than the second lens SL2', the beam enters the surroundings of the second unipotential lens SL2. Accordingly, even when the second emitting angle .theta..sub.2 ' of the beam becomes small, the beam has a comparatively large inside diameter r'. Further, the diameter of the two unipotential lenses SL1,SL2 is determined by the spacing between the opposing electrodes so that, when the second lens is expanded, static charge generated from the neck portion has serious influence thereon to reduce picture quality.
Thus, the first unipotential lens of a conventional multi-focusing type electron gun is formed with a larger diameter than the second lens so that the beam has a small inside diameter. However, even in such a gun, problems arise when distribution of equipotential formed in each aperture of the sixth electrode 36, which is the center of the second unipotential lens SL2 is examined.
FIG. 9 explains distribution of equipotential of the second unipotential lens SL2 formed at the aperture inside of the sixth electrode 36 of the multi-focusing electron gun of FIG. 7. Bordering each aperture inside the sixth electrode 36 to which the relatively low voltage is applied, equipotential lines are formed of a bobbin type in which the middle part is depressed, so a gap L formed at a symmetrical point becomes very narrow to hinder keeping the voltage difference uniform.
Accordingly, picture quality of color cathode ray tubes can be much improved when the second unipotential lens SL2 is not influenced by static charge generated from the neck and voltage difference thereof is kept uniform.

Multi-focusing type electron gun for color cathode ray tubes


Mixing means, for producing a flow mixture of oil and steam, is combined with an atomizing nozzle to provide a nozzle assembly which produces a jet of very fine oil droplets. The nozzle assembly is used in conjunction with a reactor, such as a fluidized bed coker. The mixing means comprises a pipe, external of the reactor, having separate, spaced apart inlets for oil and steam. The steam inlet is upstream of the oil inlet. A reducing diameter nozzle is positioned in the pipe bore between the inlets, for accelerating the steam. The steam contacts the oil and turbulently moves down the pipe bore to produce what is known as a "bubbly flow" mixture. The mixture is fed to the nozzle, which is internal of the reactor. The nozzle has: an inlet; a first contraction section of reducing diameter for accelerating the flow, preferably to supersonic velocity, whereby the droplets are reduced in size; a diffuser section of expanding diameter wherein the mixture decelerates and a shock wave may be induced; a second contraction section operative to accelerate the mixture more than the first contraction section; and an orifice outlet for producing a jet or spray. The nozzle assembly has been shown to reduce droplet size from about 12,000 .mu.m to about 300 .mu.m.

Dry bitumen liquid is obtained from oil sands and is further processed in a fluidized bed coker to produce low-boiling petroleum products. The efficacy of this coking process depends upon effective and rapid heat transfer from the fluidized bed solids of the coker to the bitumen feed. This can be enhanced by introducing the bitumen into the coker in the form of fine liquid droplets, thereby significantly increasing the surface area of the bitumen. The greater the surface area, the more effective and rapid the heat transfer to the bitumen. In addition, better heat transfer is achieved if the cross-sectional coverage area of the droplets is increased. The formation of a wide spray of evenly distributed fine bitumen droplets will increase the desired liquid distillate products and decrease the undesired by-products, namely, gas make and coke make.
The bitumen feed is conventionally mixed with steam to produce a two phase mixture and this mixture is injected into the fluid coker through nozzles. The nozzles induce some atomization of the bitumen so that a spray or jet of bitumen droplets is injected into the coker. However, it is our belief that the commercial nozzles available only atomize a portion of the bitumen. We have tested the prior art nozzles used in the present assignees' fluid coker using water and steam as the feed--the indication is that 70-90% of the liquid passed through the nozzle is in a non-atomized form. In addition, the average mean diameter of the atomized liquid droplets produced in the test were in the order of 400 .mu.m for an air to liquid ratio (ALR) value of 0.008; this is larger than desirable for optimal coking of the bitumen to occur.
One aim of the present invention is to provide an improved nozzle that atomizes most of the liquid processed into evenly distributed fine droplets, resulting in desirable droplet surface area of the bitumen when it is subjected to the coking process.
In service, nozzles used to atomize the bitumen feed are subject to high wear rates and a high degree of plugging. Therefore it is desirable to ensure that a nozzle not only atomizes the bitumen effectively but is also erosion resistant in order to minimize replacement and repair costs. This can be achieved by designing a nozzle assembly with a minimum of internal parts. In addition, the nozzle assembly should be "roddable" so that it may be unplugged with a rod.
It is also desirable that a nozzle design be effective over a broad range of gas/liquid ratios because the bitumen feed rate is variable.
It is further desirable that the pressure drop required for achieving satisfactory atomization is not excessive.
The literature teaches that several flow mechanisms can have an effect on reducing liquid droplet size in two phase flow. More particularly it is known:
That longitudinal vibration of stretched liquid droplets (referred to as "ligaments") can cause reduced diameter at the nodal points and corresponding "necking", which can lead to droplet break-up and formation of finer droplets (this is referred to as the "Rayleigh instability"); PA1 That longitudinal stretching or straining of a liquid droplet by an accelerating carrier fluid flow can lead to droplet break-up. Otherwise stated, situating droplets of one fluid in another fluid undergoing acceleration can cause the droplets to undergo shear. When the shear forces overcome surface tension forces, the droplets will deform and can break up (this is referred to as the "elongation effect"); PA1 That mean and fluctuating shear stresses applied to larger droplets can cause the droplets to rotate, then stretch and ultimately divide into smaller droplets. Mean shear effects and stresses can be induced in droplets by turbulent flow and fluctuations of the carrier phase (the "Reynolds stress effect"); PA1 That droplets can collide with each other or an impact surface and break up if generated internal stress exceeds surface tension effects; and PA1 That droplets passing through a supersonic shock wave can break up due to the effect of the sudden pressure rise. PA1 the first contraction section should accelerate the mixture to supersonic velocity--the possibility is then created for generating a flow of relatively small droplets such as in "bubbly" flow due to the elongation of the flow and secondly generating a shock wave in the diffuser due to the lower speed of sound value. If a shock wave is created, it will assist in droplet size reduction; PA1 as previously stated, the second contraction section should accelerate the mixture more than that achieved by the first section. We successfully used a section that provided about twice the acceleration. If the fine droplets produced by the first contraction and diffuser sections are to be further reduced in size, it is necessary to subject them to relatively increased elongation and shear stress; and PA1 the diffuser section should increase the diameter of the flow passageway sufficiently so that the desired acceleration in the second contraction section can be achieved. However the length of the section needs to be limited to avoid excessive recombination of droplets. We found a 3.degree. section to be satisfactory while a 6.degree. section, total angle, was much less useful. PA1 a straight pipe closed at one end by a valve and connected at the other end with the nozzle; PA1 a pre-conditioning nozzle of reducing diameter positioned coaxially in the pipe bore between its ends; PA1 an inlet upstream of the nozzle, for introducing the steam; and PA1 an inlet, close to and downstream of the nozzle, for introducing the bitumen. PA1 use of the nozzles and active mixing means in connection with a commercial fluid coker demonstrated improved upgraded oil yield; PA1 the nozzle has been shown to be capable of reducing the majority of water droplets in a water/air mixture from about 12,000 .mu.m in the feed to about 300 .mu.m in the jet product and the fine droplets are evenly distributed in the product jet; and PA1 the nozzle is free of working parts and is roddable.
It is the objective of the invention to provide a nozzle assembly, free of moving parts, which can be "rodded" to unplug it and which is designed to incorporate some or all of the previously mentioned flow mechanisms, to combine in efficiently breaking up large liquid droplets in a two phase flow.
It is to be understood that, while the nozzle was developed for service with fluid cokers in the petroleum refining field, it is anticipated that it will find application in other fields where atomizing nozzles are used.

Nozzle for atomizing liquid in two phase flow