Bispecific antibodies which comprise one antigen-binding region binding to an epitope of human epidermal growth factor receptor 2 (HER2) and one antigen-binding region binding to human CD3, and related antibody-based compositions and molecules, are disclosed. Pharmaceutical compositions comprising the antibodies and methods for preparing and using the antibodies are also disclosed.

HER2 is a 185-kDa cell surface receptor tyrosine kinase and member of the epidermal growth factor receptor (EGFR) family that comprises four distinct receptors: EGFR/ErbB-1, HER2/ErbB-2, HER3/ErbB-3, and HER4/ErbB-4. Both homo- and heterodimers are formed by the four members of the EGFR family, with HER2 being the preferred and most potent dimerization partner for other ErbB receptors (Graus-Porta et al., Embo J 1997; 16:1647-1655; Tao et al., J Cell Sci 2008; 121:3207-3217). HER2 can be activated by overexpression or by heterodimerization with other ErbBs that can be activated by ligand binding (Riese and Stern, Bioessays 1998; 20:41-48). For HER2, no ligand has been identified. HER2 activation leads to receptor phosphorylation, which triggers a cascade of downstream signals through multiple signaling pathways, such as MAPK, phosphoinositol 3-kinase/AKT, JAK/STAT and PKC, which ultimately results in the regulation of multiple cellular functions, such as growth, survival and differentiation (Huang et al., Expert Opin Biol Ther 2009; 9:97-110).
Much of the attention on HER2 in tumors has been focused on its role in breast cancer, in which HER2 overexpression is reported in approximately 20% of the cases and is correlated with poor prognosis (Reese et al., Stem Cells 1997; 15:1-8; Andrechek et al., Proc Natl Acad Sci USA 2000; 97:3444-3449; and Slamon et al., Science 1987; 235:177-182). Besides breast cancer, HER2 expression has also been associated with other human carcinoma types, including prostate cancer, non-small cell lung cancer, bladder cancer, ovarian cancer, gastric cancer, colon cancer, esophageal cancer and squamous cell carcinoma of the head & neck (Garcia de Palazzo et al., Int 3 Biol Markers 1993; 8:233-239; Ross et al., Oncologist 2003; 8:307-325; Osman et al., J Urol 2005; 174:2174-2177; Kapitanovic et al., Gastroenterology 1997; 112:1103-1113; Turken et al., Neoplasma 2003; 50:257-261; and Oshima et al., Int J Biol Markers 2001; 16:250-254).
Trastuzumab (Herceptin®) is a recombinant, humanized monoclonal antibody directed against domain IV of the HER2 protein, thereby blocking ligand-independent HER2 homodimerization, and to a lesser extend heterodimerization of HER2 with other family members in cells with high HER2 overexpression (Cho et al., Nature 2003; 421:756-760 and Wehrman et al., Proc Natl Acad Sci USA 2006; 103:19063-19068). In cells with modest HER2 expressing levels, trastuzumab was found to inhibit the formation of HER2/EGFR heterodimers (Wehrman et al., (2006), supra; Schmitz et al., Exp Cell Res 2009; 315:659-670). Trastuzumab mediates antibody-dependent cellular cytotoxicity (ADCC) and prevents ectodomain shedding, which would otherwise result in the formation of a truncated constitutively active protein in HER2 overexpressing cells. Also inhibition of both in vitro and in vivo proliferation of tumor cells expressing high levels of HER2 has been reported for trastuzumab (reviewed in Nahta and Esteva, Oncogene 2007; 26:3637-3643). Herceptin® has been approved both for first-line and adjuvant treatment of HER2 overexpressing metastatic breast cancer, either in combination with chemotherapy, or as a single agent following one or more chemotherapy regimens. Trastuzumab has been found to be effective only in 20-50% of HER2 overexpressing breast tumor patients and many of the initial responders show relapse after a few months (Dinh et al., Clin Adv Hematol Oncol 2007; 5:707-717).
Pertuzumab (Omnitarg™) is another humanized monoclonal antibody. It is directed against domain II of the HER2 protein, resulting in inhibition of ligand-induced heterodimerization (i.e., HER2 dimerizing with another member of the ErbB family to which a ligand has bound); a mechanism reported to not strictly require high HER2 expression levels (Franklin et al., Cancer Cell 2004; 5:317-328.). Although pertuzumab also mediates ADCC, the main mechanism of action of pertuzumab relies on its dimerization blockade (Hughes et al., Mol Cancer Ther 2009; 8:1885-1892). Moreover, pertuzumab was found to enhance EGFR internalization and downregulation by inhibiting the formation of EGFR/HER2 heterodimers, which otherwise tethers EGFR at the plasma membrane (Hughes et al., 2009, supra). This correlates with the observation that EGFR homodimers internalize more efficient than EGFR/HER2 dimers (Pedersen et al., Mol Cancer Res 2009; 7:275-284. The complementary mechanisms of action of pertuzumab and trastuzumab reportedly results in enhanced anti-tumor effects and efficacy when combined in patients who progressed during prior trastuzumab therapy (Baselga et al., J Clin Oncol 2010; 28:1138-1144), and a phase III trial to evaluate this antibody combination together with Docetaxel in previously untreated HER2-positive metastatic breast cancer is underway.
An alternative approach to improve targeted antibody therapy is by delivering cytotoxic cells or drugs specifically to the antigen-expressing cancer cells. This concept of using T-cell for efficient killing of tumor cells has been described already in 1985 (Stearz at al. Nature 1985, 314:628-631). For example, the so-called trifunctional antibodies are bispecific antibodies, targeting with one arm the antigen on the tumor cell and with the other arm for instance CD3 on T cells, and provide Fc receptor binding by the Fc region. Upon binding, a complex of T cells, tumor cells and effector cells that bind the antibody Fc domain is formed, leading to killing of the tumor cells (Muller and Kontermann, BioDrugs 2010; 24:89-98.). Ertumaxomab is one such trifunctional antibody against HER2 and CD3, which induces cytotoxicity in cell lines with low HER2 expression and which is in Phase II clinical development in metastatic breast cancer (Jones et al., Lancet Oncol 2009; 10:1179-1187 and Kiewe et al., Clin Cancer Res 2006; 12:3085-3091).
Alternatively, a complex of T cells and tumor cells are formed, leading to killing of the tumor cells (Muller and Kontermann, BioDrugs 2010; 24:89-98, Baeuerle and Reinhardt 2009, Cancer Research 96: 4941) by an dual targeting antibody fragment (e.g. dual targeting single chain antibodies). Blinatumomab (Bargou et al, Science 2008, 321:974-976) is a single chain antibody construct named BITE which induces cytotoxicity by targeting CD19 and CD3. Other antibody fragment based T-cell engaging bispecifics have been described (Moore et al. 2011, Blood 117:4542-4551, Baeuerle et el. Current opinion in Molecular Therapeutics 2009, 11:22-30).
The complex mechanisms regulating the function of HER2 warrant further research on new and optimized therapeutic strategies against this proto-oncogene. Accordingly, there remains a need for effective and safe products for treating HER2-related diseases, such as cancer.

Bispecific antibodies against HER2 and CD3


A biological component adhesion-suppressing material includes a substrate provided with a functional layer having, fixed on a surface thereof that comes into contact with a biological component, a polymer including a saturated aliphatic monocarboxylic acid vinyl ester unit, wherein: when compositional analysis is performed on the surface of the functional layer using a TOF-SIMS device, the number of carbon atoms in an aliphatic chain representing an ion signal detected for saturated aliphatic carboxylic acid is 2-20; and an XPS measurement taken of the surface of the functional layer shows a peak derived from an ester group.

Conventional medical materials are recognized as contaminants for biological components and cause adhesion of platelets and proteins, and biological reactions, resulting in serious problems. In addition, in conventional blood purifiers such as artificial kidney modules, platelets and proteins adhere to the surfaces of materials in the blood purifier, resulting in deterioration of fractionation performance and water permeability. Particularly, in continuous blood purifiers to be used for treatment of acute renal failure, continuous use for one day to several days is required. Therefore, it is important to set specifications that ensure that adhesion of platelets and proteins is suppressed, thus making it possible to withstand use for a long period of time.
In addition, with regard to materials other than medical materials, for example, separation materials to be used for antibody purification or the like there is the problem that the recovery rate decreases due to adhesion of antibodies to the surface of the separation material. Attempts have been heretofore made to solve such a problem by hydrophilizing the surface of a medical material, and various studies have been conducted.
Japanese Patent Publication No. 2-18695 discloses a polysulfone-based polymer in which by performing molding while mixing polyvinyl pyrrolidone as a hydrophilic polymer at the stage of a membrane formation dope solution, hydrophilicity is imparted to a membrane to suppress contamination.
Japanese Patent Laid-open Publication No. 6-238139 discloses a polysulfone-based polymer separation membrane in which a coating layer insolubilized by radiation crosslinking is formed after the polymer is brought into contact with a hydrophilic polymer solution such as polyvinyl pyrrolidone.
Japanese Patent Laid-open Publication No. 2010-104984 and Japanese Patent Laid-open Publication No. 2011-173115 disclose a separation membrane of a polysulfone-based polymer in which a vinylpyrrolidone/vinyl acetate copolymer is immobilized on a surface.
Further, International Publication No. WO 2013/015046 discloses a separation membrane of a polysulfone-based polymer in which a lipid-soluble vitamin and poly (2-hydroxyalkyl methacrylate) are immobilized on a surface.
However, in the methods described in Japanese Patent Publication No. 2-18695 and Japanese Patent Laid-open Publication No. 6-238139, it is difficult to form a coating layer because of the weak interaction between a hydrophilic polymer such as polyvinyl pyrrolidone and a polysulfone-based polymer as a hydrophobic polymer. Therefore, to impart hydrophilicity to the surface by that method, it is necessary to use a large amount of a hydrophilic polymer in a membrane formation dope solution, or it is necessary to limit the hydrophilic polymer to one that is compatible with a polymer to be used as a substrate.
On the other hand, in the methods described in Japanese Patent Laid-open Publication No. 2010-104984 and Japanese Patent Laid-open Publication No. 2011-173115, a vinyl acetate unit interacts with a hydrophobic substrate to improve introduction efficiency of the copolymer so that hydrophilization can be efficiently performed, but a vinylpyrrolidone/vinyl acetate copolymer that is a commercially available polymer is used, and a structural design suitable to suppress adhesion of platelets and proteins is not considered at all. In fact, we prepared a medical material on the basis of the methods described in Japanese Patent Laid-open Publication No. 2010-104984 and Japanese Patent Laid-open Publication No. 2011-173115 and found that platelets and proteins adhered to the medical material when the medical material was in contact with blood or the like for a long period of time.
The method described in International Publication No. WO 2013/015046 is aimed at improving antioxidant performance, and has not been evaluated for antithrombogenicity. Further, a surface design associated with arrangement, immobilization and the like of a polymer is important in hydrophilization of the surface of a medical material, but this point is not described at all.
Thus, it could be helpful to provide a biological component adhesion-suppressing material that is able to suppress adhesion of platelets and proteins even when coming into contact with blood or the like.

This patent is subject to a terminal disclaimer.

Biological component adhesion-suppressing material


A coupling includes a diaphragm assembly, a sleeve, a stud, and a ball bearing system. The diaphragm assembly includes a first end, a second end, and an opening extending axially through the diaphragm assembly with the diaphragm assembly also including a first annular diaphragm pair. The sleeve extends into the opening and has a bore. The stud extends at least partially within the bore of the sleeve and within the opening. The ball bearing system is concentric with and radially between the sleeve and the stud with the ball bearing having an outer race adjacent to the sleeve, an inner race adjacent to the stud, and at least two rows of ball therebetween with the outer race having an arced shape when viewed in a circumferential direction to allow for axial movement of the at least two rows of ball bearings relative to the outer race.

The present disclosure relates to the coupling of rotating components and, in particular, to a flexible coupling for transmitting power and accommodating angular misalignment between rotating shafts, such as in aircraft transmission devices.
Drive systems include power transmission couplings between rotatable members. These couplings transmit power from an engine to a gearbox or from a rotatable driving shaft to a rotatable driven shaft. These shafts can axially, angularly, and/or radially misaligned. Flexible couplings capable of carrying high torque and high bending stress are employed for coupling such rotatable members.


An isochronous cyclotron including one or more coils and a plurality of pairs of bulk superconductor sectors. The one or more coils can be configured to generate a magnetic field in the beam chamber having a magnetic flux density that increases radially from the central axis of the beam chamber, and is orientated substantially perpendicular to the median acceleration plane of the beam chamber. Each pair of bulk superconductor sectors can be disposed on opposite sides of the median acceleration plane. The plurality of pairs of bulk superconductor sectors can be configured to guide or concentrate the magnetic field to provide an axial focusing component of the magnetic field.

Referring to FIG. 1, an isochronous cyclotron according to the conventional art is shown. The isochronous cyclotron 100 includes a beam chamber 105 having a central axis and a median acceleration plane. The isochronous cyclotron 100 further includes a particle source 115 configured to introduce charged particles into the beam chamber 105 proximate the central axis of the beam chamber 105.
One or more coils 125 are disposed about the beam chamber 105. The one or more coils 125 are configured to generate a magnetic field in the beam chamber 105 having a magnetic flux density that increases radially from the central axis of the beam chamber 105 and is orientated perpendicularly to the median acceleration plane. One or more radio frequency (RF) drives circuits (not shown) are configured to accelerate the charged particles 220 in the beam chamber 105 in an orbiting trajectory 230 expanding outward from the central axis, as illustrated in FIG. 2. After acceleration along the orbital trajectory 230 the charged particles 220 can be output from the isochronous cyclotron 100, 200 through one or more ports 235.
In the isochronous cyclotron 100, 200 the magnetic field increases with the radius of the beam chamber 105 to keep the angular frequency of the particle constant. As the radius increases, the particle frequency does not depend on the energy of the particle. However, this leads to axial (e.g., vertical) instability in axially symmetric magnetic fields. The axial instability in the magnetic field causes a vertical defocusing wobble in the particle beam.
To compensate for the axial instability, the magnetic field is modified azimuthally to focus the particle beam. To modify the magnetic field azimuthally, the isochronous cyclotron 100, 200, 300 includes a plurality of pairs of sector hills 140, 240, 340, 345 and a plurality of pairs of sector valleys 150, 250, 350, 355 disposed on opposites sides of the median acceleration plane 310, as illustrated in FIG. 3. The sector hills 140, 240, 340, 345 and the sector valleys 150, 250, 350, 355 can be comprised of iron or other ferromagnetic material. FIG. 3 shows a section view along a radial arc of the beam chamber 105. The magnetic field 360 generated by the one or more coils 125 perpendicular to the median acceleration plane 310 is also illustrated. The magnetic flux density is greater between the pairs of sector hills 140, 240, 340, 345 because the sector hills 140, 240, 340, 345 are closer together, while the magnetic flux density is less between the pairs of sector valleys 150, 250, 350, 355. The resulting local densification and de-densification of the magnetic flux density can provide an axial focusing component along the particle path. In addition, the charged particles can experience an axially restoring force at the edges of the sectors. The axially restoring force acts toward the median acceleration plane 310. The dots indicate that the particle has a velocity component into the page and the crosses indicate that the particle has a velocity component toward the page. The incongruity of the magnetic field proximate the boundary between the sector hills 140, 240, 340, 345 and sector valleys 150, 250, 350, 355 providing the axially restoring force is commonly referred to as the flutter field. In some cases, the sector valleys 150, 250, 350, 355 may also be referred to as flutter sectors, flutter plates or the like.
Referring now to FIG. 4, the sector hills and valleys 440 can have a wedge form factor. Alternatively, the sector hills and valleys 540 can have a spiral form factor, as shown in FIG. 5. The spiral shape of the sector hills and valleys 540 can provide additional axial focusing.
A larger average magnetic field 360 that provides a tighter spiral deflection of the charged particles 220 enables the size of the isochronous cyclotron 100, 200 to be reduced. However, as the average magnetic field 360 is increased, the flutter field decreases relative to the average magnetic field. Therefore, the axial instability increases. Furthermore, the ferromagnetic sectors saturate when the magnetic field is increased beyond the magnetic saturation limit of the sector material. When the ferromagnetic sectors saturate, the sectors cannot generate the flutter fields at their boundaries that are used to provide axial focusing.
To provide additional magnetic flutter field flux, the valley sectors 640 can further include an electromagnetic coil 645 disposed about the perimeter of the valley sectors 640, as illustrated in FIG. 6. In one implementation, the electromagnetic coil 645 disposed about the perimeter of the valley sectors 640 can be a superconductor coil. However, the superconductor coil increases the complexity as a result of the need for routing current to and from the valley sectors, the need for cooling the valley sectors below the critical temperature of the superconductor of the coils, and the like. In addition, isochronous cyclotrons typically include twelve to twenty valley sectors 640. Therefore, the amount of superconductor coil 645 used for wrapping the valley sectors 640 can result in an appreciable cost increase in the isochronous cyclotron 100, 200. In addition, the preferable sharp tips of the valley sectors 640 need to be rounded to accommodate the coil 645 disposed about the perimeter of the valley sectors 640. Furthermore, the concave sections of the preferred spiral shape of the valley sectors 640 increase the complexity of winding the coil 645 about the perimeter of the valley sectors.
Accordingly, there is a continuing need for improved particle acceleration techniques in isochronous cyclotrons to permit further reductions in the size and or cost of the isochronous cyclotrons.

Isochronous cyclotrons employing magnetic field concentrating or guiding sectors

Varian Medical Systems Particle Therapy GmbH


Provided, is a reliable semiconductor device with a layered interconnect structure that may develop no trouble of voids and interconnect breakdowns, in which the layered interconnect structure comprises a conductor film and a neighboring film as so layered on a semiconductor substrate that the neighboring film is contacted with the conductor film. In the device, the materials for the conductor film and the neighboring film are so selected that the difference between the short side, ap, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the short side, an, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {lap−anl/ap}×100=A (%) and the difference between the long side, bp, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the long side, bn, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {lbp−bnl/bp}×100=B (%) satisfy an inequality of {A+B×(ap/bp)}<13. In this, the diffusion of the conductor film is retarded.

The present invention relates to a semiconductor device, in particular, to that with a layered interconnect structure.
In recent large-scale-integration, high-performance semiconductor devices, copper (Cu) interconnects are being employed as having lower electric resistance than conventional aluminum (Al) interconnects. However, diffusion of copper (Cu) atoms into silicon (Si) substrates or insulating films will detract from the characteristics of the devices. To prevent the copper (Cu) diffusion, a diffusion barrier is formed adjacent, to the copper (Cu) film. As the material for the diffusion barrier, high-melting-point metal films of, for example, titanium nitride (TiN), tungsten (W) or tantalum (Ta) have been investigated, as in the Nikkei Microdevice (for July 1992, pp. 74-77).
Large-scale-integration semiconductor devices with fine patterns receive high-density current, in which, therefore, atoms are diffused owing to electron streams flowing therein and to heat as generated by the flow to cause voids and interconnect breakdowns. The problem with the devices is so-called electromigration. As compared with aluminum (Al) films, copper (Cu) films, as having a higher melting point, are difficult to diffuse, and are therefore expected to have good electromigration resistance. However, layered interconnect structures in which a diffusion barrier of, for example, a titanium nitride (TiN) film, a tungsten (W) film or a tantalum (Ta) film is kept in contact with a copper (Cu) film could not have satisfactory electromigration resistance, and therefore often pose the problem of voids and interconnect breakdowns.

Semiconductor device and method for producing the same


A swimming pool skimmer which has two independent pieces, a first piece and a second piece, fixed to one another orientably. The first piece forms a first guide tunnel for water in the swimming pool and has a first axis of symmetry in its longitudinal direction. The second piece has a body with a cylindrical wall and has a second axis of symmetry in its longitudinal direction. The first and second pieces are suitable for being fixed to one another in several possible angular positions in which the inclination, between the first and second axes at the level of the first and second pieces, varies from 90° to 90°+α max when the first axis, at the level of the first piece, has an inclination varying from the horizontal to an angle α max below the horizontal, the second axis being vertical.

The present invention relates to a novel type of orientable skimmer, that is, a device from a water circulation plant of the pool of a swimming pool, cooperating with a side wall of the pool of the swimming pool to suction and channel water from the pool by skimming its surface, the water being channeled in a pipe circuit external to the pool of the swimming pool. This type of device is also known as a skimmer.
A skimmer comprises two parts per se, specifically:
1/—a tunnel having a substantially rectangular cross-section, whereof the longitudinal axis is substantially horizontal, passing through the wall of the swimming pool and terminating at the level of the wall, the side walls of the tunnel also being flared in the direction of the interior of the swimming pool to favour water flow from the interior of the swimming pool to the exterior of the swimming pool by way of this opening in the form of a funnel. The opening of the skimmer is designed to receive a current of water from the pool of the swimming pool to the water circulation circuit outside the pool. The funnel-shaped part and the tunnel part aim to create shrinkage in width of the latter to generate acceleration of the water rate passing through it in the direction of the skimmer body. The opening of the opening, at the level of the wall of the swimming pool, is regulated by a pivoting panel, the opening being made by pivoting of the panel (acting as anti-return valve) as a function of the suction current of the water via the skimmer, in known fashion, and
2/—a skimmer body whereof the longitudinal axis is placed substantially vertically, that is, perpendicularly to the axis of said tunnel, the body of the skimmer comprising a cylindrical wall substantially having a circular cross-section, with a lower orifice cooperating with a conduit of the water treatment device, especially in the direction of a water treatment device, such as a sand filter. The skimmer body is for taking up a basket in its lower part, that is, in a well located in the skimmer body, but below the ceiling surface of the tunnel opening.
The "skimmer" or "surface skimmer" keeps the water plane perfectly clean. Attached to the electropump group, the skimmers can absorb the entire installation rate, thus rapidly ridding the water plane of leaves, hair, hairs, insects and impurities deposited before they grow heavy and fall to the bottom of the pool. These skimmers are fitted with an easily accessible basket, allowing retention of these elements to avoid obstruction of the conduits and protect the electropump group. If possible, the skimmers are placed facing the prevailing wind and facing the discharge outlets so as to propel impurities towards the extraction and create a current over the entire surface of the pool. Provided with cache, screws, flanges and joints, the skimmers are equipped with an extension which avoid cutouts in the ledge.
Traditionally, there are two distinct sizes of skimmer with small and large opening, though in both cases the skimmer body is substantially of the same dimension.
In conventional terms, the approximate skimmer dimensions are the following:                external opening rectangular of the opening terminating on the pool:        large opening: width=400 mm, height=165 mm, and        small opening: width=200 mm approximately, height=130 mm.
The skimmer body has a circular cross-section of around 200 mm in diameter at its base, corresponding substantially to the diameter of the filtration basket.
The distance between the plane of the aperture of the opening on the pool side and the axis of the skimmer body depends on the thickness of the wall of the swimming pool and other installation conditions of the swimming pool when it is being installed. This distance can vary from 30 to 45 cm.
Most often, the tunnel part of the skimmer itself comprises two parts, specifically:                a flared part, that is, whereof the rectangular cross-section of the tunnel reduces from its opening terminating in the wall in the direction of the skimmer body, and        a second part of substantially constant rectangular cross-section placed between the skimmer body and the part of the tunnel in a funnel shape.
This offset of the skimmer body is linked to the thickness of the wall but, also, of the peripheral ledge around the pool, to the extent where the upper part of the skimmer body is covered by a plate and cover which contact at the level of the surround enclosing the pool, beyond the peripheral ledge.
Accordingly, the most significant deposits on the surface of the water of the pool are swept in through the opening and collected in this filtration basket.
For the quantity of water swept along in the skimmer to be optimal, with respect to its function as skimmer at the surface of the water, in conventional terms the level of the water in the upper chamber of the skimmer body, above the filtration basket, must arrive at a level corresponding substantially to ⅔ to 8/10 of the height of the opening of the skimmer body corresponding to the opening of the tunnel on the skimmer side. And, in theory also, the level of water at the level of the opening, that is, at the level of the opening of the tunnel on the pool side, must be substantially ⅔ to 8/10 of its height relative to the floor of the tunnel.
In skimmers in current use the two parts of the skimmer, specifically and respectively the tunnel/opening, on the one hand, and on the other hand, the filtration basket receptacle body, are placed according to perpendicular axes.
A problem comes up for swimming pools whereof the wall of the pool, receiving the skimmer, is slightly inclined relative to the vertical. This is the case in particular for swimming pools in a shell shape made of stratified composite materials based on synthetic resin and fibres, especially polyester resin, for which an inclination must be provided, from 2 to 5 degrees relative to the vertical, of the side walls of the shell to allow the shell to be stripped. The result is that after the opening is placed at the level of the wall of the pool of the swimming pool, the skimmer body is not quite vertical, which impairs proper functioning of the skimmer, as will be explained hereinbelow. In fact, the upper chamber of the skimmer, above the filtration basket, can be entirely filled with water when the external opening of the opening is filled to 80% only, according to the standard criterion considered as optimal for proper functioning of the skimmer. Inversely, the external opening of the opening will be filled to less than 50% so that the upper chamber of the skimmer body is filled from 50 to 80%. These two cases in point impair proper functioning of the water circulation and skimming of the water surface of the pool by the skimmer.
Another disadvantage of the inclination of the skimmer body is that a lifting device has to be applied to it to recover an upper end plane for cooperating with horizontal plates and covers at ground level. This hoist is generally constituted by a cross-section of a tubular washer of cylindrical wall with transverse cross-section inclined at its upper end, allowing its inclination to be adapted by rotation on itself to regain a horizontal plane at ground level.
Another problem of skimmers is their relative fragility, in particular at the level of the junction zone of the tunnel/opening part with the cylindrical body part of the skimmer. Therefore, at the worksite, when the swimming pool is being installed it is required to install the skimmer on the wall of the swimming pool and the skimmer body constitutes a nuisance due to its bulk outside the pool and often receives shocks on site.
Also, in winter, in the case of frost there is often waste, especially fissures at the level of the junction between the tunnel part and the cylindrical body of the skimmer.
In case the skimmer is damaged it is difficult to replace it, especially to remove the tunnel/opening part from the wall of the swimming pool. This is why most frequently local repairs are made, but which do not always prove reliable or satisfactory.
The aim of the present invention is to provide a novel type of skimmer which brings a solution to the abovementioned problems.

Swimming pool skimmer comprising two independent pieces fixed to one another orientably


A safety pressure relief device comprises an annular flange portion (22), a concave/convex dome portion (24) and a transition portion (26) between the flange portion (22) and the dome portion (24), the transition portion (26) comprising a linear extent (28) extending from the annular flange portion (22) at a first acute angle (θ1) to the plane of the flange portion (22), a tangent to the dome portion (24) at its junction with the transition portion (26) making a second acute angle (θ2) with the plane of the flange portion (22) which is greater than said first angle (θ1), a line of weakness being formed in and around part at least of the linear extent (28) of the transition portion (26).

It is conventional practice to provide reverse buckling discs comprising an annular peripheral flange portion bounding an integral concave/convex dome portion, the disc being provided with one or more scores positioned to encourage opening of the disc on reversal thereof.
A currently preferred position for the score is around the dome portion adjacent the transition region between the dome portion and the flange portion, such a score being in a position of relatively high stress, and providing maximum free flow area for fluid subsequent to tearing of the collapsed reversed dome portion along the score.
Manufacture of such reverse buckling discs, however, poses a number of problems, both economical and practical.
One current method of manufacture is, with reference to FIG. 1, to provide a pre-form 2 incorporating a hemisphere the shape of which conforms with that of the dome portion 4 of the desired disc, to form the dome portion 4 of the disc in the pre-form 2, and then to score the dome portion 4 with an associated blade 6 whilst the dome portion is supported in the pre-form 2.
However it is necessary to provide separate tooling for each and every deliverable range of burst pressure of disc, which is clearly financially impractical.
Alternative known methods are shown in FIGS. 2 to 4, FIG. 2 showing a pre-form 8 which can be used for a range of anticipated dome heights all of which are less than that of the hemisphere 10 provided in the pre-form 8. Thus the dome portion 12 of the formed disc terminates below the hemisphere 10, and the scoring is effected by a score blade 14. However, scoring of the dome portion 12 in this manner can, as shown in FIG. 4, damage the dome portion by distorting the unscored reverse of the dome portion 12, which leads to an unreliable product and underlying issues in respect of:                repeatable performance        low product yield        range limitation        reduced in-service cycle life        high maintenance costs for tooling        inability to produce a specific burst pressure        high production costs.
FIG. 3 shows an annular pre-form or anvil 16 with a chamfered or angled lower inner region 18 for accommodating a range of discs in a similar manner to the pre-form of FIG. 2, such an arrangement suffering from the same disadvantages detailed above in respect of FIG. 3.


For each of pads for control clock signals and address signals included in a DRAM, an n type well region is provided, and each n type well region is connected to an upper power supply source only by means of a first lower power supply line. Therefore, compared with the conventional device in which n type wells are connected to each other by a second lower power supply line, current flowing from the resistance element in a p type well to the upper power supply line is reduced. Therefore, damage to the resistance element 8 can be prevented, and surge immunity of the DRAM is increased.

1. Field of the Invention
The present invention relates to a semiconductor memory device and to a semiconductor device.
More specifically, the present invention relates to a semiconductor memory device and a semiconductor device structured to protect its data portion against a surge current.
2. Description of the Background Art
FIG. 30 is a partially omitted from plan view showing a layout of a conventional dynamic random access memory (hereafter referred to as a DRAM). In the figure, memory mats 51 are provided at four corners of a rectangular chip, respectively. A row recorder 52 is provided along a longer side of each memory mat 51, and a column decoder 53 is provided along a shorter side of each memory mat 51.
A plurality of pads are arranged in one line at a peripheral circuit region 54 at the center of the chip. A ground potential VSS is externally applied to pads 1.1, 1.2 and 1.3. A power supply potential VCC is externally applied to pads 2.1, 2.2 and 2.3. Pads 3.1 to 3.K are used for data signal input/output. Control clock signals /RAS, /CAS, . . . are applied to pads 4.1 to 4.M. Address signals A1 to AN are externally applied to pads 5.1 to 5.N.
Along the plurality of pads, three power supply lines 2ALVCC, 2ALVBB and 2ALVSS are provided. To power supply line 2ALVCC, the power supply potential VCC is applied externally through pads 2.1, 2.2 and 2.3. A negative power supply VBB is applied from an internal power supply circuit (not shown) provided in the chip to power supply line 2ALVBB. The ground potential VSS is applied externally to power supply line 2ALVSS through pads 1.1, 1.2 and 1.3.
An internal protecting circuit for protecting an internal circuitry of the DRAM against an externally applied surge current is provided in each pad.
FIG. 31 is a schematic diagram showing the structure of the internal protecting circuit 9 provided in each of pads 4.1 to 4.M and 5.1 to 5.N. Referring to the figure, the internal power protection circuit 9 includes two resistance elements 6 and 8 connected in series between a pad (for example, 5.2) and an internal circuitry of the DRAM, and a field transistor 7 connected between a connection node of the two resistance elements 6 and 8 and a node of the ground potential VSS (hereinafter referred to as the ground node). Field transistor 7 has its gate connected to the ground node.
The surge current input to pad 5.2 is attenuated by resistance element 6. The surge current which has passed through resistance element 6 flows out to the ground node through field transistor 7 by a punch through. The remaining surge current which did not flow out to the ground node is further attenuated by resistance element 8 and flows to an internal circuitry. Therefore, the internal circuitry can be protected against the surge current.
FIG. 32 is a partially omitted view of the portion including pads 4.1 to 4.M and 5.1 to 5.N of FIG. 30, shown in enlargement. Near each of the pads 4.1 to 4.M and 5.1 to 5.N, an n type well region NW for the internal protecting circuit 9 is provided, and two p type well regions PW2 and PW2 are formed in each n type well region NW. Power supply lines 1ALVCC, 1ALVBB and 1ALVSS are provided corresponding to each of the pads 4.1 to 4.M and 5.1 to 5.N.
To each n type well region NW, the power supply potential VCC is applied from power supply line 2ALVCC to power supply line 1ALVCC. To each of the p type well regions PW1 and PW2, the power supply potential VBB is applied from power supply line 2ALVBB through power supply line 1ALVBB. To each p type well region PW1, the ground potential VSS is further applied from power supply line 2ALVSS through power supply line 1ALVSS.
For connecting adjacent well regions NW and PW2, power supply lines 1ALVBB' and 1ALVCC' are provided. The plurality of p type well regions PW2 corresponding to pads 4.1 to 4.M are connected to each other by means of power supply line 1ALVBB'. The plurality of p type well regions PW2 corresponding to pads 5.1 to 5.N are connected to each other by power supply line 1ALVBB'. The plurality of n type well regions NW corresponding to pads 5.1 to 5.N are connected to each other by power supply line 1ALVCC'. The plurality of n type well regions NW corresponding to pads 4.1 to 4.M are not connected to each other by the power supply line 1ALVCC', because of a reason in a layout.
FIG. 33 is enlarged view of a portion including n type well regions NW of FIG. 32. Two p type well regions PW1 and PW2 are formed separated from each other in n type well regions NW. A field transistor 7 of internal protecting circuit 9 is formed in p type well region PW1, and resistance element 8 of internal protecting circuit 9 is formed in p type well region PW2. Field transistor 7 has its gate and source connected to power supply line 1ALVSS. The p type well region PW1 including field transistor 7 is formed separate from p type well region PW2 including resistance element 8 in accordance with a general method of design in which arrangement is performed element by element.
Referring to FIGS. 34 and 35, the structure of internal protecting circuit 9 will described in greater detail. FIG. 34 is an enlarged view of pad 5.2 and portions therearound of FIG. 32, and FIG. 35 is a cross section taken along the line 35--35 of FIG. 34.
Referring to FIGS. 34 and 35, in the DRAM chip, a so-called triple well structure is employed. More specifically, at a surface of a p type silicon substrate 20, an n type well region BNW is formed, and at its surface p type well region PW1 and PW2 are formed. Along p type well regions PW1 and PW2, n type well region NW is formed, and p type well regions PW1 and PW2 are separated from p type silicon substrate 20. At the surface of n type well region NW, a band shaped n.sup.+ type potential fixed region 21 is formed.
The n.sup.+ type drain region 7d of field transistor 7 is formed at the center of the surface of p type well region PW1, and n.sup.+ source region 7s is formed surrounding n.sup.+ drain region 7d. A band shaped p.sup.+ type potential fixed region 22 is formed along the outer periphery of p type well region PW1.
At the central portion of the surface of p type well region PW2, an n.sup.+ type diffusion resistance region 8 is formed. The n.sup.+ type diffusion resistance region 8 constitutes the resistance element 8 of internal protecting circuit 9. Around the outer periphery of p type well region PW2, a p.sup.+ type potential fixed region 23 is formed.
An IF transistor 12 for testing state of connection of pad 5.2 and a bonding wire is also formed in p type well region PW2.
On silicon substrate 20, a polycrystalline silicon layer BL, a lower aluminum interconnection layer 1AL and an upper aluminum interconnection layer 2AL are formed successively. By polycrystalline silicon layer BL, resistance element 6 and interconnections 10 and 11 for cross under are formed. By lower aluminum interconnection layer 1AL, power supply lines 1ALVCC1 to 3, 1ALVCC', 1ALVBB, 1ALVBB', 1ALVSS1, 1ALVSS2 and signal lines 1ALSL1 to 3 are formed. By the upper aluminum interconnection layer 2AL, pad 5.2 and power supply lines 2ALVCC, 2ALVBB and 2ALVSS are formed.
Pad 5.2 is connected to one end of resistance element 6 through signal line 1ALSL1. Resistance element 6 has its the other end connected to one end of resistance element 8 and to n.sup.+ type drain region 7d of field transistor 7 through signal line 1ALSL2. Resistance element 8 has the other end connected to the internal circuitry of the DRAM through signal lines 1ALSL3. Power supply line 1ALVSS1 and 1ALVSS2 also serve as gate electrodes 7g1, 7g2 of field transistor 7. Power supply lines 1ALVSS1 and 1ALVSS2 are connected to power supply line 2ALVSS.
Power supply lines 1ALVCC1 to 3 are formed on n.sup.+ type potential fixed region 21 of n type well region NW, and connected to n.sup.+ type potential fixed region 21 through a contact hole. Power supply lines 1ALVCC1 and 1ALVCC2, and 1ALVCC2 and 1ALVCC3 are connected to each other by interconnections 10 and 11, respectively. Power supply lines 1ALVCC1 and 1ALVCC3 are connected to power supply line 2ALVCC. Power supply line 1ALVCC2 has both ends connected to power supply line 1ALVCC2 corresponding to pads 5.1 and 5.3 through power supply line 1ALVCC', respectively.
Power supply line 1ALVBB is formed along p.sup.+ type potential fixed regions 22 and 23 of p type well regions PW1 and PW2, and connected to p type potential fixed regions 22 and 23 through contact holes. Power supply line 1ALVBB is connected to power supply line 2ALVBB. Power supply line 1ALVBB is connected to power supply line 1ALVBB corresponding to adjacent pads 5.1, 5.3 through power supply line 1ALVBB' passing above interconnections 10 and 11, respectively.
Structures near remaining pads 5.1, 5.3 to 5.N are similar. The structure near pads 4.1 to 4.M is also similar, except that power supply lines 1ALVCC2 are not connected by power supply line 1ALVCC'.
In FIG. 34, the distance Ly between an end of the resistance element 8 on the input side (connected to n.sup.+ type drain region 7d of field transistor 7) and the power supply line 1ALVCC2 is smaller than the distance Lx between the end of resistance element 8 on the input side and the power supply line 1ALVCC3.
FIG. 36 shows a structure of a pad 5.2 and portions therearound of another conventional DRAM not employing the triple well structure. FIG. 37 is a cross section taken along the line 37--37 of FIG. 36, and FIG. 38 is a cross section taken along the line 38--38 of FIG. 36.
Referring to the figures, in the DRAM, n.sup.+ type drain region 7d and n type source region 7s of field transistor 7 and n.sup.+ type diffusion resistance region 8 are directly formed at the surface of p type silicon substrate 20, and wells PW and NW are not formed. The n.sup.+ type drain region 7d, n.sup.+ type source region 7s and n.sup.+ type diffusion resistance region 8 are separated from each other by a field oxide film 24. A resistance element 6 is formed by a polycrystalline silicon layer BL, signal lines 1ALSL1 to 3 are formed by lower aluminum interconnection layer 1AL, and pad 5.2 is formed by an upper aluminum interconnection layer 2AL.
Pad 5.2 is connected to one end of signal line 1ALSL1 through a contact hole CH, and the other end of signal line 1ALSL1 is connected to one end of resistance element 6 through contact hole CH. The other end of resistance element 6 is connected to one end of signal line 1ALSL2 through a contact hole CH, and the other end of signal line 1ALSL2 is connected to n.sup.+ type drain region 7d of field transistor 7 and to one end of n.sup.+ type diffusion resistance region 8 through a contact hole CH. The other end of n.sup.+ type diffusion resistance region 8 is connected to single line 1ALSL3 through a contact hole CH, and the other end of signal line 1ALSL3 is connected to the internal circuitry of the DRAM.
The DRAM is similar to the DRAM shown in FIGS. 30 to 35 except that the triple well structure is not employed.
For simplicity, the gate electrodes 7g1 and 7g2 of field transistor 7 and IF transistor 12 shown in FIG. 36 are omitted in FIG. 36.
Further, in FIGS. 30 to 35, field oxide film 24 shown in FIG. 37 and 38 are omitted for simplicity.
FIG. 39 is a cross section showing a still another conventional DRAM structure not employing the triple well structure but employing a trench separation structure, which corresponds to FIG. 37. In the DRAM, n.sup.+ type drain region 7d, n.sup.+ type source region 7s and n.sup.+ plus type diffusion resistance region 8 are separated from each other by a trench separation region 25. Trench separation region 25 is formed by forming at the surface of silicon substrate 20, a trench deeper than a junction portion between n.sup.+ type drain region 7d and silicon substrate 20, and by filling the trench with an insulator. The DRAM is similar to that shown in FIGS. 36 to 38 except that it employs the trench separation structure.
In the chip shown in FIGS. 30 to 35 employing a triple well structure, a surge current was applied to each of the pads 4.1 to 4.M and 5.1 to 5.N for testing the surge immunity of the chip. Then it was found that the internal protecting circuit 9 corresponding to pads 5.1 to 5.N was more susceptible to damage than the internal protecting circuit 9 corresponding to pads 4.1 to 4.M. The reason for this may be the fact that the current value flowing from the input side end of resistance element 8 to power supply line 1ALVCC2 differ dependent on the presence/absence of power supply line 1ALVCC'.
Further, it was found that surge immunity of the chip shown in FIGS. 30 to 35 employing the triple well structure has smaller surge immunity than the chip shown in FIGS. 36 to 38 not employing the triple well structure. The reason for this may be the fact that in the chip employing the triple well structure, surge current leaking from resistance element 8 diffuses only in the well regions PW1, NW and BNW, while in the chip not employing the triple well structure, the surge current leaking from resistance element 8 diffuses to the entire signal substrate 20. In other words, it is because of the difference of the capacity of portions absorbing the surge current.
In the chip shown in FIGS. 36 to 38 not employing the triple well structure, it was found that of the junction surfaces between n.sup.+ type drain region 7d, n.sup.+ type diffusion resistance region 8 and the silicon substrate 20, the portion corresponding to the junction between n.sup.+ type drain region 7d, n type diffusion resistance region 8 and contact hole CH (for example, the portion Q of FIG. 38) tends to be broken. A reason for this may be the fact that aluminum atoms of contact hole CH diffuse into n type drain region 7d and n.sup.+ type diffusion resistance region 8, and that there is a large difference in impurity concentration between n.sup.+ type region 7d, n.sup.+ type diffusion resistance region 8 and silicon substrate 20, so that electric field at the portion Q increases when the surge current flows, resulting in a leak path formed by large current flowing through the portion Q.
The chip shown in FIG. 39 employing not the triple well structure but the trench separation structure has low capability of absorbing surge current. The reason for this may be the fact that the current flowing through the base of npn bipolar transistor formed in the horizontal direction below the field transistor 7 is intercepted by trench separation region 25, and therefore npn bipolar transistor comes to have reduced current drivability.

Semiconductor memory device and semiconductor device


The invention provides a housing adapted to provide for the juxtaposition of an oral hygiene device, such as a toothbrush, with an inhaler medication device, such as a metered dose inhaler (MDI) or dry powder inhaler (DPI). Also provided is an assembly including a housing, an oral hygiene device and an inhaler medication device wherein, in use, the housing and inhaler medication device together secure the oral hygiene device in the housing such that the oral hygiene device cannot be removed for use without first removing the inhaler medication device.

Asthma and other respiratory diseases, such as chronic obstructive pulmonary disease (COPD) have long been treated by the delivery via inhalation of appropriate medication into the body via the lungs. The inhalation of the medication has been facilitated by an inhaler or puffer device. For many years the two most widely used and convenient choices of portable treatment devices have been the metered dose pressurised inhaler (MDI), or a dry powder inhaler (DPI). In an MDI the medication is most commonly stored in solution in a pressurised canister that contains a propellant, although the medication may also be in suspension. The MDI canister is attached to a plastic, hand-operated actuator. On activation, the MDI releases a fixed dose of medication in aerosol form from the mouthpiece of the MDI that can then be drawn into the lungs of the user. Dry powder inhalers release a dose of the medication as a powder aerosol.
In medicine, compliance or adherence describes the degree to which a patient correctly follows medical advice. Non-compliance or non-adherence of patients in taking their medication is a major recognised problem in the effective delivery of health care. Estimates from the World Health Organisation indicate that asthma non-compliance could be as significant as 28-70% worldwide, which means that there is a corresponding increase in the risk of severe asthma attacks requiring hospitalisation and this contributes to the human and economic burden of asthma as a condition. Non-adherence of asthma sufferers to their medication in the US alone is estimated to cost US $290 million per year. One of the major compliance barriers seen in asthma sufferers not taking their medication or overusing the wrong type of asthma medication is the difficulty for asthma sufferers to habitually remember to take their preventive medication. The preventive medication, such as Seretide® made by GlaxoSmithKline that includes fluticasone proprionate (a preventer of asthma symptoms) with salmeterol (an asthma symptom controller), needs to be taken on a twice daily basis. Efforts to improve compliance with asthma sufferers taking their preventive medication that are undertaken include the likes of sending reminders including telephone reminders, using individualised charts, diaries, e-mail, text or SMS messages, electronic applications for use with smartphones and the like. However, all of these efforts or systems require ongoing costs and daily interruption in the lives of asthma sufferers.
The present invention aims to provide an alternative low cost method of providing a device that reminds an asthma sufferer to use their inhaler every time that they brush their teeth, or to at least provide the public with a useful choice.

Housing for an oral hygiene and medication device, and an assembly thereof


A slope compensation circuit that provides slope compensation in a switching regulator is provided. The slope compensation circuit preferably is adapted to receive an oscillator pulse train from a pulse width modulator oscillator and a modulator pulse train from a pulse width modulator. The circuit preferably includes a feedback loop that is responsive to the oscillator pulse train. The circuit preferably provides a slope compensation pulse train of ON and OFF states that is responsive in part to the feedback loop and in part to the pulse width modulator switch pulse train. The invention preferably achieves lower maximum slope compensation current by incorporating an analog feedback loop in the PWM system to start slope compensation preferably only slightly ahead of PWM switch-OFF. This preferably occurs independent of the PWM duty cycle.

The present invention relates to switching regulator circuits. More particularly, the present invention relates to circuits and methods for maintaining constant amounts of slope compensation in switching regulators preferably independent of variations of switching frequency of the regulators.
The purpose of a voltage regulator is to provide a predetermined and substantially constant output voltage to a load from a voltage source which may be poorly-specified or fluctuating. Two types of regulators are commonly used to provide this function; a linear regulator and a switching regulator. In a typical linear regulator, the output voltage is regulated by controlling the flow of current through a pass element from the voltage source to the load.
In switching voltage regulators, however, the flow of current from the voltage source to the load is not steady, but is rather in the form of discrete current pulses. To create the discrete current pulses, switching regulators usually employ a switch (such as a power transistor) that is coupled either in series or parallel with the load. The current pulses are then converted into a steady load current with an inductive storage element.
By controlling the duty cycle of this switch—i.e., the percentage of time that the switch is ON relative to the total period of the switching cycle—the switching voltage regulator can regulate the load voltage. In current-mode switching voltage regulators—i.e., a switching regulator that is controlled by a current-derived signal in the regulator—there is an inherent instability when the duty cycle exceeds 50%—i.e., when the switch is ON for more than 50% of a given switching period. Stability is often maintained in such current-mode switching regulators by adjusting the current-derived signal used to control the regulator with a slope compensation signal which compensates for the instability present at higher duty cycles. From the slope compensation theory it is generally known that the slope compensation signal is only needed at the instant when the switching regulator switch turns OFF
One method of producing such a slope compensation signal is to use a portion of an oscillator signal as the compensation signal. The oscillator signal may be, for example, a ramp signal that is used to generate a clock signal that controls the switching of the regulator. The slope compensation signal can be applied by either adding the ramp signal to the current-derived signal, or by subtracting it from a control signal. By deriving the slope compensation signal from a signal that oscillates the switch of the regulator, the slope compensation signal is synchronized with the switching of the regulator.
In the conventional current mode switching regulator 100 shown in FIG. 1, slope compensation is needed for the operating duty cycle of 50% or higher to avoid sub-harmonic oscillation. Switching regulator 100 preferably includes oscillator 102, flip-flop 104, preferably pulse width modulated switch control circuit 106, inductor 108, resistor divider formed from resistors 110 and 112, output capacitor 114, output load 116, voltage feedback (or other suitable type, such as current feedback, of) amplifier 118, feedback capacitor 120, and current comparator 122 which is adapted to receive a switch current sample 126 and a slope compensation signal 124 and to compare the sum of these signals with a signal from voltage feedback amplifier 118.
This exemplary circuit uses a common type of switching regulator which is known as a pulse-width modulation (PWM) regulator. The PWM regulator relies on pulse width modulation to produce output signals of different amplitudes. PWM switching regulators vary the duty-cycle of the output signals they produce in order to adjust the current supplied and the voltage level maintained at their output or outputs. The voltages supplied at the outputs of these regulators may depend on the ratio of the switch pulse width to the switch pulse period, a higher ratio producing a higher output voltage.
Oscillator 102 is shown in greater detail in FIG. 2 as oscillator 200. Oscillator 200 preferably includes a charging source 202 for charging oscillator capacitor 204, an oscillator switch 206, an oscillator current comparator 208, a discharging current sink 210 for discharging oscillator capacitor 204, and a second comparator 212 that provides the Vset signal to voltage regulator 100 (not shown in FIG. 2.)
Typically, regulators use the oscillator voltage Vramp, derived in the circuit shown in FIG. 2 and depicted as the signal 300 shown in FIG. 3A, as a reference to generate the slope compensation. Vset indicates the low and high signals, T1 and T2, respectively, that are transmitted to flip-flop 104 of voltage regulator 100.
FIG. 4A shows compensation curve Sx 402 with a selected portion of Vramp 404. The x-axis of FIG. 4A shows the duty cycle of the switching regulator. The y-axis runs from 0 volt to 1 volt. In order to generate slope compensation curve Sx 402, conventional switching regulators use the circuit shown in FIG. 4B. This circuit includes unity gain buffer 406, NPN transistor 408 and resistor 410.
Linear slope compensation curve Sx 402 typically starts at 50% duty cycle (as shown in FIG. 4A) and is determined by VB. In one particular case, VB may be equal to 0.5V (arbitrarily chosen). Furthermore, Sx 402 has a fixed slope determined by resistor 410.
The oscillator ramp Vramp is fed to the positive input of unity gain buffer 406 and VB and resistor 410 are connected to the negative input. Only when Vramp is higher than VB does NPN transistor 408 turn ON. The emitter current of transistor 408 is determined by:
      Vramp    -    VB        Res        .410  This emitter current of transistor 408 forms the slope compensation signal Sx 402.
VB determines slope compensation curve Sx 402 starting point Ts as follows:
            Ts                                              (                  Sx                                                              Starting                                                              point                )              =          VB              Vpeak                                                  of                                                  Vramp                      and resistor 410 determines the slope of the curve, as shown below:
      Slope                          of                          Sx                          402              :                                            ⅆ        Sx                    ⅆ        t              =            ⅆ      Vramp              Resistor                                      410                                      x                                              ⅆ        t            Because Vramp is a linear ramp, VB is therefore directly proportional to the duty cycle. In one exemplary system, when VB=0.5, Ts corresponds to a 50% duty cycle from the foregoing equations.
One problem associated with the exemplary prior art configuration is that, because the slope compensation curve starts at 50%, it builds up to a very high level Smax at maximum duty cycle 100%.
This high level Smax can cause problems when the regulator is operating at a high duty cycle as follows. Because VC (shown as the output of feedback amplifier 118) at current comparator 122 positive input generally has the same value as the sum of the switch current sample and the slope compensation signal at the negative input of current comparator 122 when the regulator loop closes, it is often used to indicate the output current load level. But at a high duty cycle, the slope compensation builds up from 50% duty cycle and introduces high offset at VC, and VC will not accurately indicate true output load current. Because of this high offset at high duty cycle, problems include a reduced current limit level. This problem is especially pertinent if a fixed VC level is used for current limit. Furthermore, a highly efficient Burst Mode™ threshold will be off at light load situations if a fixed VC level is used to determine the Burst Mode™ threshold.
Another problem associated with the prior art is that the circuit has to use very high current to generate this high level slope compensation signal when operating at high duty cycle.
Therefore, it would be desirable to provide a slope compensation signal that does not cause the voltage regulator circuit to lose the indication of true output load current at high duty cycles.
It would also be desirable to limit the current required to generate a high level slope compensation signal at high duty cycles.

Switching regulator slope compensation generator circuit


A method for preparing tobramycin sulfate powder for injection is provided. The method includes steps of providing a sterile tobramycin sulfate solution; and aseptically spray drying the tobramycin sulfate solution to obtain the tobramycin sulfate powder.

Tobramycin is a very hygroscopic aminoglycoside antibiotic that is extracted from the fermentation of Streptomyces tenebrarius. Two major impurities and a degradation product specified in European Pharmacopeia (EP) are kanamycin B, neamine (impurities), and nebramine (degradation product), respectively. It shows an antibacterial effect on the gram-negative bacteria when formulated as ophthalmic, inhalant, and injectable dosage forms. Generally, the injectable dosage forms of tobramycin include Tobramycin Injection and Tobramycin for Injection. The former one is a tobramycin sulfate solution with the addition of preservatives and anti-oxidants, and the latter one is tobramycin sulfate powder without any other excipients. As the Tobramycin for Injection is concerned, it is generally prepared by lyophilizing (freeze-drying) a sterile tobramycin sulfate solution. Although the lyophilization process for powder for injection is well-developed in pharmaceutical industry, it is still inefficient on drying and requires high energy consumption. Moreover, low throughput is another demerit due to the long cycle time, i.e., about 24 to 48 h. Thus, the lyophilization process is essentially time-consuming and expensive.
Spray drying is one of the conventional techniques in chemical industry since 1920s and has several advantages, compared to the lyophilization process. For example, the spray drying process can save more than 50% energy cost in comparison to the lyophilization process. Generally, the spray drying process mainly includes three stages. The first one is the atomization of the concentrated solution into numerous liquid droplets. Second, the liquid droplets contact with the heated gas, e.g., air or N2, and then the liquid droplets evaporate to accompany with the nucleation of particles in a short period about a few seconds. Finally, the dried particles are collected by a cyclone system incorporated with a bag filter or wet scrubber. In view of industrial processes, the advantages of spray drying include the continuous mass production, automated controlling, higher energy efficiency, and feasible applications for both heat-resistant and heat-sensitive materials. Therefore, the application of spray dryers is widely adopted in industry. However, it is rarely in the aspect of manufacturing active pharmaceutical ingredients (APIs) so far.
In 2008, Pilcer had reported that tobramycin suspension can be spray dried to prepare tobramycin powder for inhalation in his dissertation. In the study, tobramycin suspensions were firstly prepared by using a homogenizer to disperse tobramycin powder into isopropanol solutions containing 0 to 20% (v/v) water. After the tobramycin suspension was spray dried, the prepared powders were filled with capsules as the tobramycin powder for inhalation. The same results were also disclosed in other publications.
The above prior art described the preparation of tobramycin powder for inhalation by spray drying a tobramycin suspension, in which isopropanol is used as continuous phase. However, the prepared tobramycin powder is different from tobramycin sulfate and not suitable for intravenous use in consideration of the residual isopropanol, which is toxic to health. Also the chosen isopropanol is a flammable solvent which increases the possibility of explosion during spray drying. In addition, isopropanol is not environmentally friendly. On the other hand, the solid content of prepared tobramycin suspension is merely 5% (w/v) which is much lower than the saturated solubility of tobramycin in water. Thus the production rate of spray drying tobramycin is quite low and impractical. Moreover, the injectable dosage form, i.e., powder for injection, is used more widely in comparison to the dry powder inhalation (DPI) due to its effectiveness and ready-to-use.
Accordingly, the present invention provides a method of spray drying for preparing tobramycin sulfate powder that can be formulated as Tobramycin for Injection and reconstituted for intravenous administration.

Method for preparing tobramycin sulfate powder


Example methods, apparatuses, or articles of manufacture are disclosed that may be implemented using one or more computing devices to facilitate or otherwise support one or more processes or operations associated with ranking entity facets using user-click feedback.

1. Field
The present disclosure relates generally to search engine information management systems and, more particularly, to ranking entity facets for a given query using user-click feedback for use with search engine information management systems.
2. Information
The Internet is widespread. The World Wide Web or simply the Web, provided by the Internet, is growing rapidly, at least in part, from the large amount of information being added regularly. A wide variety of information, such as, for example, web pages, text documents, images, audio files, video files, or the like is continually being communicated, identified, located, retrieved, accumulated, or stored. Various information databases including, for example, knowledge bases or collections of user-generated content, Web-based or otherwise, have become commonplace, as did related communication networks or computing resources that help users to access relevant information.
In certain instances, search engine information management systems or search engines may be utilized to locate or otherwise provide access to information. For example, service providers may employ search engines to enable a user to search the Web using one or more search terms or queries or to try to locate or retrieve information that may be relevant to one or more queries. In addition to retrieving information, search engines may employ one or more functions or processes to rank information, such as retrieved documents, files, etc. and to display documents, files, etc. in an order that may be based, at least in part, on various ranking measures, such as, for example, relevance, usefulness, popularity, web traffic, recency, or the like. Search engines may further arrange or present information, such as, for example, retrieved documents, files, etc. in a variety of different formats. Because of the large amount and distributed nature of information on the Web, locating or presenting information in an efficient or effective manner may be valuable for both users inexperienced at web searching and for advanced "web surfers."
With an overabundance of information being available or accessible over the Internet, search engine information management systems as well as information retrieval techniques continue to evolve or improve. Effectively or efficiently locating or retrieving information on the Web may facilitate or support information-seeking behavior of search engine users, thus, leading to increased usability of a search engine. However, how to rank information in terms of relevance continues to be an area of development. Accordingly, with so much information being available, there is a continuing need to develop one or more methods, systems, or apparatuses that may implement efficient or effective information retrieval or presentation techniques.

Ranking entity facets using user-click feedback


A retainer for a sliding device provided with a buffer member includes a body which is arranged between sliding rails, and has buffering insertion grooves on one side that are open in the outward direction, which is the withdrawal direction, and on the other side, which is the closing direction, so as to adjust the range of withdrawal when the sliding rails are withdrawn; and buffer member portions protruding from the two ends of the body, respectively, in the direction of an accommodation body, and being arranged so as to be respectively inserted into the buffering insertion grooves for coming into contact when the sliding rails are withdrawn.

In general, a piece of furniture, such as a desk or closet, or a home appliance, such as a refrigerator, a washing machine or a microwave oven, is provided with a receptacle which is pushed in and pulled out in a state in which an object is contained therein. A body of the furniture or home appliance has an accommodating space, and the receptacle having an inner space in which the object is contained is slidably coupled via a sliding device, which is disposed on both sides thereof, such that it can slide into and out of the accommodating space.
A typical sliding device is disposed between the body and the receptacle, in which a rail fixed to the body and a rail which moves along with the receptacle are disposed such that they overlap each other. Rolling means such as balls or rollers are disposed between the overlapping rails such that the fixed rail and the movable rail come into rolling-contact with each other.
In this sliding device, the rolling means is disposed between the rail of the receptacle and the rail of the body such that the receptacle moves via rolling when it is pulled out and pushed in. Accordingly, the receptacle can be smoothly opened and closed when it is pulled out and pushed in. In addition, the rails have a double structure that includes the rail fixed to the body and the rail fixed to the receptacle. In order to increase the length to which the receptacle is pushed out, a triple rail structure in which an intermediate rail is disposed between the fixed rail and the movable rail can be provided. Since the sliding structure is identical irrespective of the double or triple rail structure, it is apparent to a person having ordinary skill in the art that these structures belong to the same category.
The rolling means disposed between the overlapping rails in the sliding device includes a retainer which allows a plurality of balls or rollers to stay in the same interval in the state in which they are disposed at positions where they come into rolling-contact with each other.
A typical retainer is disposed between the fixed rail and the movable rail, and has a configuration that minimizes interference during movement. A plurality of rolling members, such as balls and rollers, are inserted at positions where the fixed rail and the movable rail overlap each other, and stay at predetermined intervals.
Specifically, in the sliding device, the rail fixed to the body has the shape of a letter "C," and the rail which moves along with the receptacle has the same shape such that it can be inserted into the open portion. Accordingly, the retainer which is inserted into the fixed rail and the movable rail has the same shape so as not to interfere with either of them.
In addition, the rolling members fitted to the retainer, which is inserted at a position where the movable rail overlaps the fixed rail at protruding surfaces which face each other, can come into rolling-contact with both of the fixed rail and the movable rail.
In addition, the retainer disposed between the fixed rail and the movable rail has the function of supporting the rolling members and limiting the length to which the movable rail, which slides on the fixed rail in the overlapping fashion, is pulled out in order to prevent the movable rail from be dislodged to the outside. Specifically, the retainer moves in rolling-contact between the fixed rail and the movable rail, and has a protrusion at one end in the pulling-out direction, the protrusion preventing the retainer from being dislodged. The movable rail also has a protrusion which is held by the retainer in order to prevent dislodgment. In other words, when the receptacle is pulled out, one side of the retainer in the pulling-out direction is held by the protrusion on the fixed rail, thereby preventing the retainer and the movable rail from being dislodged to the outside. In addition, the other side of the retainer in the closing direction is held by the protrusion on the movable rail, thereby limiting the length to which the receptacle slides when it is pushed in.
Such a retainer has the following problems: When the receptacle is pulled out, both sides of the receptacle are held by the protrusions on the rails. An impact is thereby transferred to the receptacle, thereby generating noise. In addition, damage may occur due to repeated impact.
In addition, a typical retainer is strong enough to withstand an impact transferred thereto, since it is made of the same metal material as the rails. However, when the rail moves, the rolling members which are disposed for rolling movement are rubbed against the metal-made retainer, thereby creating noise. This may also damage the rolling members.
In addition, the retainer made of the metal material must be formed such that it has the shape of a letter "C" corresponding to the shape of the rails and that the rolling members can be inserted into opposing surfaces so that they can roll. This makes machining difficult, thereby increasing the machining cost. When the metal material is exposed to moisture, corrosion occurs, and frictional sound is produced thereby. During a pulling out action, the retainer collides against with the rails made of the same metal material, thereby creating noise.
Accordingly, recently, a retainer has been made of a synthetic resin material in order to reduce noise due to friction against the rolling members and minimize the damage of the rolling members.
However, the retainer of the related art is less strong than the metal material in terms of withstanding an impact that occurs during a pulling out action. When the receptacle is repeatedly pulled out, the retainer may be easily broken by impact that is transferred thereto, which is problematic.
In addition, in the retainer of the related art, when the receptacle is pulled out, both sides of the retainer collide against the protrusions on the rails so that the rail is prevented from being dislodged and the length to which the receptacle is pulled out is changed. At this time, noise is produced to due to impact, which is problematic.
Furthermore, when the receptacle is pulled out, an impact is created as the retainer of the related art collides against the rail. The impact is concentrated at the contact surface, which may be broken when an impact repeatedly occurs due to continuous pulling-out actions, which is problematic.

Retainer for sliding device provided with buffer member


A vehicle is provided with an identification information memory in which identification information of the vehicle is memorized, and a transmitter for transmitting the identification information. A portable terminal is provided with a receiver for receiving the identification information transmitted from the transmitter, a registration information memory in which identification information of a ridable vehicle is memorized as registration information in advance, and a controller for executing authentication between the identification information and the registration information and executing a warning processing when a result of authentication shows inconsistency.

1. Field of the Invention
The present invention relates to a crime prevention system for notifying the occurrence of a crime in which a vehicle is used.
2. Description of the Related Art
In recent years, the number of stolen cars has been increased, and various systems in which a portable terminal is used for authentication of a vehicle driver have been proposed as a prevention measure. The theft prevention system for vehicle, for example, recited in No. 2004-224265 of the Japanese Patent Documents is constituted in such a manner that identification information of a portable telephone possessed by a driver is memorized on the vehicle side in advance, and identification information transmitted from the portable telephone and the memorized identification information are collated with each other on the vehicle side so that the vehicle is allowed to be used when the information are coincident with each other. Hereinafter, the foregoing example is referred to as the first conventional example.
FIG. 10 shows a constitution of an engine control computer provided in the vehicle of the first conventional example (theft prevention system for vehicle). An engine control computer 50 comprises an engine controller 51 for controlling an engine 60, a memory 52 in which identification information of a portable telephone 30 possessed by a driver is memorized in advance, a receiver 53 for receiving a position registration request signal transmitted from the portable telephone 30 to a base station of a telecommunication network, and a granter 54 for collating the identification information of the portable telephone 30 included in the position registration request signal and the identification information memorized in the memory 52 with each other and granting start-up of the engine 60 when the information is coincident with each other.
Meanwhile, crimes using a car are increased, and systems in which a portable terminal is used have been proposed in order to assure human safety. In the personal portable rescue request system, for example, recited in No. 2005-11305 of the Japanese Patent Documents, when a vehicle owner encounters some danger, a person presses an emergency button of a portable remote controller and transmits rescue request information using a radio portable telephone so that the safety of the vehicle owner is assured against any assailant. Hereinafter, the foregoing constitution is referred to as the second conventional example.
However, it is difficult to apply the first conventional example to a crime prevention system for notifying the occurrence of such a crime as kidnapping. The individual authentication in the first conventional example is not applicable to a portable telephone possessed by any fellow passenger in the vehicle other than the driver. Therefore, the constitution is unable to deal with the occurrence of such a crime as kidnapping.
Further, the management of the identification information used for authentication and the authenticating process itself are performed on the vehicle side, which leaves such a possibility that the identification information can be additionally registered on the vehicle side with malicious motives. As a result, there is still some problem in a security level.
Further, since the vehicle driver can be authenticated only when the engine starts, it is not possible to detect the vehicle theft after the engine started.
Meanwhile, in the second conventional example, the rescue cannot be requested when it is not possible to press the emergency button of the portable remote controller.


To present a green- to yellow-emitting phosphor whereby a light-emitting device having high color rendering properties and high luminance can be obtained, a light-emitting device employing such a phosphor, and an image display device and a lighting system, containing such a light-emitting device.

A light-emitting device for emitting white color, constituted by a combination of a gallium nitride (GaN)-type blue-emitting diode as a semiconductor light-emitting element and a phosphor as a wavelength-conversion material, has a long useful life with small power consumption and thus has attracted an attention as a light-emitting source for an image display device or a lighting system.
With such a light-emitting device, the phosphor used therein absorbs visible light in a blue color region emitted from the GaN-type blue-emitting diode and emits yellow light, whereby white color emission is obtainable by the color mixing of the yellow light with the blue light of the light-emitting diode not absorbed by the phosphor. As such a phosphor, typically, a phosphor is known which comprises, as matrix, an yttrium/aluminum composite oxide (Y3Al5O12) and which contains cerium (Ce) as a luminescent center ion in the matrix. However, this phosphor is difficult to prepare, for example, as the is firing temperature is high, and it was not satisfactory also from the viewpoint of the temperature quenching.
As a substitute yellow phosphor, the present inventors have invented a phosphor having a basic structure being Ca3Sc2Si3O12:Ce3+ (hereinafter referred to simply as "CSS phosphor") and previously filed a patent application (Patent Document 1). Namely, it is a phosphor which comprises, as matrix, a compound of a garnet crystal structure represented by the following formula and which contains a luminescent center ion in the matrix.M1′a′M2′b′M3′c′Od′wherein M1′ is a bivalent metal element, M2′ is a trivalent metal element, M3′ is a tetravalent metal element, a′ is a number within a range of from 2.7 to 3.3, b′ is a number within a range of from 1.8 to 2.2, c′ is a number within a range of from 2.7 to 3.3, and d′ is a number within a range of from 11.0 to 13.0.
The Patent Document 1 discloses Ca as the bivalent metal element M1′ and also discloses a phosphor wherein a part of Ca is substituted by e.g. Mg or Zn. Such CSS phosphor is one which emits from blue- to yellow-color depending upon the composition and is a high performance phosphor which can be used also as a green phosphor for a light-emitting device having a GaN-type blue-emitting diode, a green phosphor and a red phosphor combined.
Patent Document 1: JP-A-2003-64358

Fluorescent material, fluorescent device using the same, and image display device and lighting equipment

Abstract: A phosphor made of a compound represented by the following formula (I), which comprises, as matrix, a compound of a garnet structure and which contains, as a luminescent center ion, a metal element in the matrix:M1aM2bXcM3dM43Oe  (I)wherein M1 is Mg and/or Zn, M2 is a bivalent metal element excluding Mg and Zn, X is a metal element as a luminescent center ion composed mainly of Ce, M3 is a trivalent metal element excluding X, M4 is a tetravalent metal element, and a, b, c, d and e are numbers satisfying the following formulae, respectively:0.001≦a≦0.52.5≦b≦3.30.005≦c≦0.51.5≦d≦2.3e={(a+b)×2+(c+d)×3+12}/2.


An intake manifold is assembled from a near manifold component which is positioned near an engine, a far manifold component which is positioned far from the engine and a middle manifold component which is positioned between the near and far manifold components. The near manifold component includes first path-forming parts forming the lower parts of the intake paths. The middle manifold component includes second path-forming parts which are joined on and vibration-welded to the first path-forming parts. The middle manifold component further includes third path-forming parts which extend in the vertical direction in a curve. Further, the far manifold component includes fourth path-forming parts which are vibration-welded to the third path-forming parts.

(a) Field of the Invention
The present invention relates to a resin intake manifold for feeding air to intake ports of a multicylinder engine.
(b) Description of Related Art
As disclosed by Japanese Unexamined Patent Publications Nos. 2002-235619 (Patent Literature 1) and 2002-70670 (Patent Literature 2), there has been known a resin intake manifold including a plurality of intake paths connected to individual intake ports of an inline multicylinder engine. If a resin is used to form the intake manifold as disclosed by these patent literatures, the shape of the intake manifold can be designed with a high degree of freedom. Therefore, a throttle body mounting part for mounting a throttle body having a throttle valve and a surge tank can be integrated with the intake paths.
The resin intake manifold of Patent Literature 1 is formed of a combination of four manifold components. One of the manifold components to be mounted to the engine is configured to extend downward with inclination from the engine to the direction away from the engine. On the top of the manifold component attached to the engine, another manifold component which constitutes part of the intake paths is welded and the throttle body mounting part is integrated with the welded manifold component. Further, the other two manifold components which constitute the surge tank and part of the intake paths are welded to the bottom of the manifold component attached to the engine.
On the other hand, the resin intake manifold of Patent Literature 2 is formed of a combination of three manifold components which are separated in the vertical direction. Among them, the top manifold component is attached to the engine and integrated with the throttle body mounting part. The other two manifold components are welded below the top manifold component.
Since the intake manifold is fixed to the engine, the vibration of the engine is directly transmitted to every part of the intake manifold. Therefore, if the intake manifold is formed by welding a plurality of resin manifold components together as disclosed by Patent Literature 1, they must be welded firmly enough not to be separated from each other. However, according to Patent Literatures 1 and 2, the bottom side of the manifold component attached to the engine and the top side of another manifold component are welded together. Therefore, the weight of the lower manifold component is exerted downward on the welding interface between the manifold component attached to the engine and the lower manifold component, i.e., force is applied in the direction in which the manifold components are separated. Thus, there is a difficulty in maintaining a welding strength of a satisfactory degree.
Further, since the intake manifold of Patent Literature 1 is formed of four manifold components, the number of steps of welding the manifold components increases, causing a problem in mass productivity.

Resin intake manifold for multicylinder engine


A stage including a node control unit which controls a voltage of a first control node and a voltage of a second control node, in correspondence with a first input signal supplied to a first input terminal, a second input signal supplied to a second input terminal, and a third input signal supplied to a third input terminal, a node maintenance unit which maintains the voltage of the first control node to be constant in correspondence with the voltage of the second control node, and an output unit which supplies a first gate voltage supplied to a first power terminal or a second gate voltage supplied to a second power terminal to an output terminal in correspondence with the voltage of the first control node and the voltage of the second control node.

Field
Exemplary embodiments of the present invention relate generally to a stage and a display device having the stage, and more particularly, to a stage for supplying a light emission control signal to pixels and a display device having the stage.
Discussion of the Background
A display device displays an image using pixels disposed in a display unit. The pixels are connected to scan lines and data lines, and are driven by a scan signal and a data signal supplied from the scan lines and the data lines.
The pixels may be further connected to light emission control lines, and a light emission period of the pixels may be controlled using a light emission control signal supplied to the light emission control lines. In this case, the display device includes a light emission control driver for generating the light emission control signal.
The light emission control driver includes stages for supplying respective light emission control signals to the light emission control lines. The stages output a second gate voltage to the light emission control line connected to corresponding pixels during the light emission period of the pixels positioned on each horizontal line, and output the light emission control signal of a first gate voltage to the light emission control line in other periods to block light emission.
The display device may have a sequence in which power is turned on again after forcibly resetting a device when the device is required to be protected, such as a case where an unexpected impact is applied from the outside.
When a display device is forcibly reset, a light emission control signal that is outputting a second gate voltage (gate-on voltage) may be instantaneously changed to a ground voltage. When the device is powered on before a sufficient time elapses after the forcible reset, in a lower stage among a plurality of stages of a light emission driver, a first gate voltage (gate-high voltage) is relatively slowly applied to a low buffer gate of an output unit in comparison with an upper stage. Therefore, a short-circuit may occur between the second gate voltage and the first gate voltage.
When a short-circuit occurs between the first gate voltage and the second gate voltage, in a pixel circuit, a short-circuit may occur between first pixel power (VDD) and a data voltage (Vdata) (that is, a data signal). Therefore, an initial abnormal light emission phenomenon (flashing phenomenon) such as a screen flickering may occur.
The above information disclosed in this Background section is only for understanding of the background of the inventive concepts, and, therefore, it may contain information that does not constitute prior art.

Stage and display device including the same


A maintenance method for an elevator includes provision of a service platform in a lower region of the elevator, in particular a shaft pit, for later maintenance work, wherein the service platform was previously mounted for installation purposes on at least one set of car guide rails and served in the installation process as a working platform for mounting elevator components in the elevator shaft, in particular on a shaft wall.

By a building of a high constructional height there is to be understood a building from approximately 30 floors and higher. Installation of an elevator is relatively costly in the case of such high buildings. Special methods and devices are often provided for the installation so that the installation can be carried out efficiently in terms of time.
US 2010/0133048 A1 shows, for example, an installation method for an elevator in a high building, in which use is made of a movable installation platform. At the start of the installation method the installation platform is positioned in the region of the shaft pit. Elevator components are constantly brought to the elevator installation from where these are mounted in the shaft area. In that case, the installation method provides that the installation platform is moved upwardly into different mounting positions by means of a hoist until the installation platform reaches an uppermost or last mounting position. Finally, the installation platform itself serves at least as a sub-structure of the elevator car.
This installation method is thus distinguished not only by an efficient procedure, but also by optimum utilization of the structures already present during the installation, in that the installation platform or at least parts thereof are incorporated into the later elevator car.


A fluid dispensing device having a flexible fluid pouch and a dispensing assembly, the dispensing assembly having a top piece and a bottom piece, the top piece having a flexible actuator including a flexible dome and a flexible flange extension, the bottom piece having a bottom portion of a pump chamber, a pump chamber inlet, a chamber inlet valve, and a bottom portion of an outlet valve, the top piece and the bottom piece mated together to form a pump chamber and an outlet valve, the device configured to allow bidirectional fluid flow through either or both inlet and outlet valves, and to dispense a volume of fluid that is less than the volume of the pump chamber. The flexible pouch may have a single opening or two openings. In the case of a single opening, the entire dispensing assembly is in the interior of the pouch. In the case of two openings, only the flexible dome extends to the exterior of the pouch. The outlet valve is configured so that the more pressure that is applied to the flexible fluid pouch, the more tightly the outlet valve seals.

Various types of fluid material and media are employed for different purposes through commerce and industry. For example, there are various products in the personal care, home care, air care, transportation care, and food industries that require some type of dispensing of a fluid material from a source of such material. When this material is sold in commerce, it must be contained and stored in some type of container. When that product is used, it must be dispensed from its storage container to a location for use.
In the prior art, there are many different types of dispenses for delivering fluid material. For example, a flexible container body with a nozzle tip is commonly provided for such a purpose. An application of such use is for the dispensing of ketchup where the container body is squeezed by the user to urge the fluid material out from the nozzle tip and accurately to a desired location. The amount of fluid delivered is determined by how much the user squeezed the container body. However, this yields erratic results where more or less fluid material is delivered on each successive squeeze of the container body. Also, the container must be held upright to avoid leakage because no valves are employed.
In another example of a prior art dispensing device, a flexible container holds a volume of fluid material to be delivered. A single one-way check valve is provided as an exit port from the flexible container. When the flexible body is squeezed, the material is urged out under pressure through the valve.