The present invention is directed to minimizing the dependency of source code on the characteristics of a set-top box's in-band (streaming video or audio) hardware. The set-top box software consists of a device driver layer, which is intimately aware of hardware characteristics, an application layer, which is relatively unaware of any hardware details, a middleware layer which is also relatively unaware of any hardware details, and a device translation layer (DTL). In the DTL, all of the translation between device abstractions to device driver calls that were formerly made in middleware are moved down to an engine manager. Middleware thus becomes device-independent with respect to in-band devices, and porting Middleware to new hardware becomes trivial.

A set-top box is a device that enables a television set to become a user interface capable of receiving and decoding broadcast signals via phone, cable, satellite, the Internet, or other means of communication. Newer Set-top boxes typically include a Personal Video Recorder (PVR) capability, which additionally can record and playback broadcast signals. PVR lets the viewer watch shows in a time shifted mode so that the viewer can apply VCR-like functionality to live broadcasts. For example, the PVR lets the viewer pause, replay, rewind, fast-forward, or skip over advertising while viewing a live show.
The enhanced set-top box has become increasingly complex. The increase in functionality leads to an increase in the hardware components and interconnections used to implement that functionality. Earlier set-top boxes were designed to support a single tuner with audio, video, and data outputs.
Connections between the various components were more or less fixed in stone. While a simple system with fixed connections works well for simple hardware, it begins to become unwieldy and inadequate when more complicated hardware allows the dynamic configuration of multiple input devices (e.g., tuners, buses, and memory devices) feeding multiple output devices (decoders, memory devices, and buses) simultaneously. If a developer tries to hand-code all possible legal configurations of the hardware devices, the developer will quickly discover that the number of cases becomes very large. Hand-coding all possible configurations is possible but it represents a maintenance nightmare.
Furthermore, hand-coding must be repeated for each new product developed. Thus, it is desired to find a way to more general approach that is flexible and allows for reduced maintenance and re-use of software.

Minimizing the dependency of source code on the in-band resources of a set-top box


High fidelity velocity models are generated for acoustic vertically transverse isotropic media by taking advantage of full-waveform based modeling using VSP data. The present disclosure determines VTI parameters in acoustic media using pseudo-acoustic equations which can eliminate the contribution from shear waves, and thus significantly reduce the time needed to perform inversion. The methods disclosed herein provide workflows for performing full waveform inversion to provide velocity models used to generate seismic images with high quality and resolution.

Certain earth formations exhibit a property called "anisotropy", where the velocity of acoustic waves polarized in one direction may be somewhat different than the velocity of acoustic waves polarized in a different direction within the same earth formation. Anisotropy may arise from intrinsic structural properties, such as grain alignment, crystallization, aligned fractures, or from unequal stresses within the formation. Anisotropy is particularly of interest in the measurement of the velocity of seismic P-waves propagating in the earth formations. Subsurface formations are often anisotropic, meaning that the acoustic wave propagation speed depends on the direction in which the wave propagates. Typically, the formations, even when anisotropic, are relatively isotropic in the horizontal plane. This particular version of anisotropy is often called vertical transverse isotropic ("VTI"). Accurate seismic imaging requires that such anisotropy be accounted for during the migration portion of seismic data processing. VTI based models represent the conventional approach for anisotropic depth imaging in many areas, and prior knowledge of a vertical velocity (Vp0) and two anisotropy Thomsen parameters ∈ and δ is essential to produce accurate depth image of P-wave seismic data. It may be noted here that alternative combinations of these parameters can also be used for creation of such depth images and hence Vp0, ∈, and δ may be substituted by other parameters obtained by reformulation of the definitions of these parameters.
Over the past several decades, seismic processing has gradually developed to allow for estimation of anisotropy parameters from seismic data. One such method is vertical seismic profile ("VSP") approach. However, conventional VSP processing methods like semblance or ray-based tomography do not exploit the full-data information and, hence, generate sub-optimal velocity models. The failure to exploit all the data is because semblance and tomography methods only utilize the kinematic information and ignore the dynamic (amplitude) information in the seismic data. This results in poor recovery of subsurface parameters which affects the reservoir characterization, modeling and, ultimately, production.

Full waveform inversion of vertical seismic profile data for anisotropic velocities using pseudo-acoustic wave equations


An information device includes a main processing circuit for executing signal processing related to a main function in the information device, a main microcomputer for controlling the main processing circuit, a receiver circuit for interfacing with the outside of the information device, and an interface microcomputer for controlling the receiver circuit, the interface microcomputer being provided separately from the main microcomputer.

1. Field of the Invention
The present invention relates to an information device including a main processing circuit, an interface circuit, and a microcomputer.
2. Description of the Background Art
Conventionally, a variety of standards have been proposed for an interface between information devices. For example, HDMI (High-Definition Multimedia Interface) is known as a high-speed serial interface. Devices which adopt the HDMI as an interface are disclosed in Japanese Patent Application Laid-Open No. 2005-189587 and Japanese Patent Application Laid-Open No. 2004-248080. The HDMI is well known as a digital interface which transmits high-quality audio/video (A/V) content data between a source device such as a DVD (Digital Versatile Disk) device, an STB (Set-Top Box) and the like and a sink device such as a plasma display device, a digital television set and the like. The HDMI is characterized by the capability of transmitting encrypted information, the capability of transmitting a video signal and an audio signal at the same time, the capability of transmitting uncompressed data in real time, a transmission rate of 3.5 Gbps and a wide transmission band, and the like.
In the conventional information device, an interface circuit for interfacing with the outside based on the HDMI or other standards and a main processing circuit for performing signal processing related to a main function in the information device have been controlled by the same microcomputer. In a display device such as a plasma display device as an example, a receiver circuit for receiving and outputting a video signal, an audio signal and the like transmitted from a source device such as a DVD device by using a predetermined interface and a signal processing circuit for performing a format conversion process and like related to video display and audio output upon the video and audio signals outputted from the receiver circuit are controlled by the same microcomputer. Thus, the single microcomputer is required to execute firmware for controlling the interface circuit and firmware for controlling the main processing circuit, and therefore has the problem of bearing a heavy load during real-time processing. It is also necessary to develop the firmware for controlling the interface circuit and the firmware for controlling the main processing circuit in the same environment. This provides an increased development load, and becomes one of the causes of the slowdown of the development. Similar problems arise in the source device such as the DVD device.

Information device including main processing circuit, interface circuit, and microcomputer


A near eye display includes a main freeform prism lens and a micro-display corrector lens, where the main freeform prism lens includes a first freeform surface, a second freeform surface, and a third freeform surface, the first freeform surface refracting a light from a micro-display into a body of the main freeform prism lens, and the main freeform prism lens having an exit pupil diameter greater than 12 millimeter (mm), and a lateral color aberration of less than 4 micrometer (um)) across a diagonal field of view (FOV), where the micro-display corrector lens is positioned between the main freeform prism lens and the micro-display, the micro-display corrector lens including a first corrector lens surface and a second corrector lens surface, and each surface of the main freeform prism lens and the micro-display corrector lens comprises a surface sag.

A near eye display, also commonly referred to as a head mounted display (HMD), is used to provide virtual, augmented, or mixed-reality experiences to users. In such virtual, augmented, or mixed-reality experiences provided by the near eye display, a computer-generated virtual scene or image is combined with a real-world scene at a user's eyes. Typically, the near eye display is an electronic display that allows the user to see what is shown on the micro display panel while still being able to see the real world. As such, the near eye display maintains a direct-view of the physical world by optically superimposing the computer-generated image of the virtual scene onto the real-world scene.

Achromatic freeform prism for near eye displays


Provided herein are a drive apparatus that includes an internal combustion engine capable of operating with a high expansion ratio by reducing an effective compression ratio through advancement of an intake valve closing timing, and a control method of the drive apparatus, and a motor vehicle equipped with the apparatus and method. The drive apparatus further includes a torque output device capable of outputting a torque to an output shaft of the internal combustion engine. Upon a command to stop operation of the internal combustion engine, the apparatus controls the driving of the torque output device so that the internal combustion engine stops at a target stop position which is set outside a region that leads to an increased compression ration in an initial compression stroke when the internal combustion engine is next stated.

1. Field of the Invention
The invention relates to a drive apparatus and a motor vehicle equipped with the drive apparatus. More particularly, the invention relates to a drive apparatus that includes an internal combustion engine capable of operating with a high expansion ratio by reducing the effective compression ratio through advancement of the intake valve closing timing, and a control method of the drive apparatus, and a motor vehicle equipped with the apparatus and the method.
2. Description of the Related Art
A related-art drive apparatus of the aforementioned type has been proposed which includes a motor-generator directly coupled to a crankshaft of the engine, and which drives and controls the motor-generator so as to stop the crankshaft of the engine at a desired position when a condition for stopping the engine is met. Such a drive apparatus is disclosed in, for example, JP(A) 2001-30408. In this drive apparatus, the engine is stopped at a predetermined position of the crankshaft of the engine, so as to improve the startability of the engine at the next time of starting the engine.
In the above-described drive apparatus, however, no consideration is given to the stop position in a high-expansion ratio cycle engine that is capable of attaining a high expansion ratio by reducing the effective compression ratio through advancement of the timing of closing an intake valve. In the high-expansion ratio cycle engine, if the intake valve is closed at an intermediate point during the intake stroke, the intake gas undergoes expansion, and then is compressed. Therefore, depending on the stop position of the engine, there may occur an incident where when the engine stops, a negative pressure exists in a cylinder, so that air enters the cylinder space via clearances between the cylinder and the piston, and therefore when the engine is next started, the compression ratio in the initial compression stroke becomes rather high, thus leading to a cause for knocking or the like.

Drive apparatus, control method thereof, and motor vehicle equipped with the apparatus and the method


Gateway hardware/software (such as associated with a router in a subscriber domain) provides multiple communication devices access to a remote network. During operation, the gateway hardware establishes a secured tunnel between the gateway hardware and a remote communication device over a shared communication link. The gateway hardware also establishes a non-secure channel over the shared communication link. The gateway hardware analyzes communications received from multiple communication devices; the communications are destined for delivery to recipients in the remote network. Depending on attributes of the received communications, the gateway hardware selectively forwards each of the received communications over the secured tunnel or the non-secure channel.

Conventional wireless routers (such as those supporting WiFi™ or other types of communications) provide wireless communication devices access to a remote network such as the Internet.
As an example, a communication device initially establishes a wireless communication link with a wireless access point. Via the wireless communication link, the mobile communication device communicates requests for content to the wireless access point. The wireless access point forwards the requests to an appropriate server resource in a network to retrieve the requested content. Upon receiving the requested content form a server resource, the wireless access point then wirelessly communicates the content to the requesting communication device.
Unfortunately, communications via a conventional router are not always secure. For example, the network traffic through a router can be easily monitored to identify information such content type being retrieved, source requesting the content, etc.
One type of secure network is based on TOR (a.k.a., The Onion Router). So-called onion routing supports anonymous communications over a network. Via an onion network, messages are encapsulated in layers of encryption. Encrypted data passes through multiple network nodes called onion routers. Each router removes a single layer of the communication, uncovering the data's next destination. When the final layer is decrypted, the message arrives at its destination. According to such techniques, a sender remains anonymous because each intermediate node in the network is aware of only the location of the immediately preceding and following nodes associated with the data packet.
A conventional TOR browser conceals users' identities and their online activity from surveillance and traffic analysis by separating identification and routing. In general, TOR routing includes so-called onion routing as previously discussed.

Secured communications routing in a network


This invention relates to novel substituted isoquinoline derivatives and their use as anticonvulsants.

This invention relates to novel compounds, to processes for preparing them, and to their use as therapeutic agents.
U.S. Pat. No. 4,022,900 (Marion) discloses benzamido-tetrahydroisoquinolines having anti-hypertensive and vasodilator properties.
PCT/GB98/00781 (SmithKline Beecham), unpublished at the filing date of this application, discloses that benzamide compounds of formula (A) below possess anti-convulsant activity and are therefore believed to be useful in the treatment and/or prevention of anxiety, mania, and related depression disorders.
where;
R1 is hydrogen, C1-6 alkyl (optionally substituted by hydroxy or C1-4alkoxy), C1-6alkenyl, C1-6alkynyl, C1-6alkylCOxe2x80x94, formyl, CF3COxe2x80x94 or C1-6alkylSO2xe2x80x94,
R2 is hydrogen or up to three substituents selected from halogen, NO2, CN, N3, CF3Oxe2x80x94, CF3Sxe2x80x94, CF3COxe2x80x94, trifluoromethyldiazirinyl, C1-6alkyl, C1-6alkenyl, C1-6alkynyl, C1-6perfluoroalkyl, C3-6cycloalkyl, C3-6cycloalkyl-C1-4alkyl-, C1-6alkylOxe2x80x94, C1-6alkylCOxe2x80x94, C3-6cycloalkylOxe2x80x94, C3-6cycloalkylCOxe2x80x94, C3-6cycloalkyl-C1-4alkylOxe2x80x94, C3-6cycloalkyl-C1-4alkylCOxe2x80x94, phenyl, phenoxy, benzyloxy, benzoyl, phenyl-C1-4alkyl-, C1-6alkylSxe2x80x94, C1-6alkylSO2xe2x80x94, (C1-4alkyl)2NSO2xe2x80x94, (C1-4alkyl)NHSO2xe2x80x94, (C1-4alkyl)2NCOxe2x80x94, (C1-4alkyl)NHCOxe2x80x94 or CONH2;
or xe2x80x94NR5R6 where R5 is hydrogen or C1-4 alkyl, and
R6 is hydrogen, C1-4alkyl, formyl, xe2x80x94CO2C1-4alkyl or xe2x80x94COC1-4alkyl;
or two R2 groups together form a carbocyclic ring that is saturated or unsaturated and unsubstituted or substituted by xe2x80x94OH or xe2x95x90O; and
the two R3 groups and the two R4 groups are each independently hydrogen or C1-6 alkyl or the two R3 groups and/or the two R4 groups together form a C3-6 spiroalkyl group provided that at least one R3 and R4 group is not hydrogen.
It has now been surprisingly found that carboxamide compounds of formula (I) below possess anti-convulsant activity and are therefore believed to be useful in the treatment and/or prevention of anxiety, mania, depression , panic disorders and/or aggression, disorders associated with a subarachnoid haemorrhage or neural shock, the effects associated with withdrawal from substances of abuse such as cocaine, nicotine, alcohol and benzodiazepines, disorders treatable and/or preventable with anti-convulsive agents, such as epilepsy including post-traumatic epilepsy, Parkinson""s disease, psychosis, migraine, cerebral ischaemia, Alzheimer""s disease and other degenerative diseases such as Huntingdon""s chorea, schizophrenia, obsessive compulsive disorders (OCD), neurological deficits associated with AIDS, sleep disorders (including circadian rhythm disorders, insomnia and narcolepsy), tics (e.g. Giles de la Tourette""s syndrome), traumatic brain injury, tinnitus, neuralgia, especially trigeminal neuralgia, neuropathic pain, dental pain, cancer pain, inappropriate neuronal activity resulting in neurodysthesias in diseases such as diabetes, multiple sclerosis (MS) and motor neurone disease, ataxias, muscular rigidity (spasticity), temporomandibular joint dysfunction, and amyotrophic lateral sclerosis (ALS).
Accordingly, the present invention provides a compound of formula (I) or salts thereof or solvates thereof:
wherein:
R1 is hydrogen, C1-6 alkyl (optionally substituted by hydroxy or C1-4alkoxy), C1-6alkenyl, C1-6alkynyl, C1-6alkylCOxe2x80x94, formyl, CF3COxe2x80x94 or C1-6alkylSO2xe2x80x94;
R2 is hydrogen or up to three substituents selected from halogen, NO2, CN, N3, CF3Oxe2x80x94, CF3Sxe2x80x94, CF3COxe2x80x94, CF3SO2, trifluoromethyldiazirinyl, C1-6alkyl, C1-6alkenyl, C1-6alkynyl, C1-6perfluoroalkyl, C3-6cycloalkyl, C3-6cycloalkyl-C1-4alkyl-, C1-6alkylOxe2x80x94, C1-6alkylCOxe2x80x94, C3-6cycloalkylOxe2x80x94, C3-6cycloalkylCOxe2x80x94, C3-6cycloalkyl-C1-4alkylOxe2x80x94, C3-6cycloalkyl-C1-4alkylCOxe2x80x94, phenyl, phenoxy, benzyloxy, benzoyl, phenyl-C1-4alkyl-, C1-6alkylSxe2x80x94, C1-6alkylSO2xe2x80x94, (C1-4alkyl)2NSO2xe2x80x94,(C1-4alkyl)NHSO2xe2x80x94, (C1-4alkyl)2NCOxe2x80x94, (C1-4alkyl)NHCOxe2x80x94 and CONH2; or xe2x80x94NR5R6 where R5 is hydrogen or C1-4 alkyl, and R6 is hydrogen, C1-4alkyl, formyl, xe2x80x94CO2C1-4alkyl or xe2x80x94COC1-4alkyl; or two R2 groups together form a carbocyclic ring that is saturated or unsaturated and unsubstituted or substituted by xe2x80x94OH or xe2x95x90O;
the two R groups, the two R3 groups and the two R4 groups are each independently hydrogen, C1-6 alkyl, C1-6 alkenyl, benzyl, or phenyl, or the two R groups and/or the two R3 groups and/or the two R4 groups together form a C3-6 spiroalkyl group, provided that at least one R , R3 or R4 group is other than hydrogen; and
X is selected from the group consisting of hydrogen, halogen, cyano, CF3, alkyl and alkoxy;
provided that when X is hydrogen. the two R groups are not both hydrogen.
The compounds of this invention are typically isoquinolinyl-carboxamides, especially (tetrahydroisoquinolin-5-yl) and (tetrahydroisoquinolin-7-yl)carboxamides. The carboxamide moiety may be a benzamide. When two R2 groups form a carbocyclic ring, this is typically a 5-7 membered ring, and the carboxamide moiety may be a naphthalene carboxamide or an indane or indanone carboxamide.
In the formula (I), alkyl groups, including alkyl groups that are part of other moieties, such as alkoxy or acyl, may be straight chain or branched. Phenyl groups, including phenyl groups that are part of other moieties, in R2 may optionally be substituted with one or more independently selected halogen or C1-6 alkyl, C1-6 alkoxy or C1-6 alkylcarbonyl.
Suitable C3-6 cycloalkyl groups include cyclopropyl, cyclobutyl, cyclopentyl, and cyclohexyl. Suitable halo substituents include fluoro, chloro, iodo and bromo.
It should be appreciated that compounds of the present invention possess chiral centres and as such may exist in different enantiomeric forms, the present invention extends to each enantiomeric form and mixtures thereof including diastereoisomers and racemates.
A preferred group of compounds of formula (I) have;
R as methyl or hydrogen; and/or
R1 as hydrogen or methyl; and/or
R2 as methyl, ethyl, iso-propyl, methoxy, ethoxy, iso-propoxy, bromo, chloro, fluoro, iodo, cyano, acetyl, CF3, or C2F5; and/or
R3 as hydrogen, methyl, or spirocyclobutyl; and/or
R4 as hydrogen, methyl, benzyl, allyl, phenyl, iso-butyl, or iso-propyl; and/or
X as hydrogen, chloro, bromo, methyl, or ethyl.
A further aspect of the invention provides a compound selected from the group consisting of;
N-(3,3-Dimethyl-1,2,3,4-tetrahydro-2-trifluoroacetyl-isoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(3,3-Dimethyl-1,2,3,4-tetrahydro-2-trifluoroacetyl-isoquinolin-7-yl)-3-cyano-4-iso-propylbenzamide;
N-(3,3-Dimethyl-1,2,3,4-tetrahydro-2-trifluoroacetylisoquinolin-7-yl)-3-chloro-4-iso-propyloxybenzamide;
N-(3,3-Dimethyl-1,2,3,4-tetrahydro-2-trifluoroacetylisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(3,3-Dimethyl-1,2,3,4-tetrahydro-2-trifluoroacetylisoquinolin-7-yl)-3-bromo-4-iso-propyloxybenzamide;
N-(3,3-Dimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(3,3-Dimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-iso-propylbenzamide;
N-(3,3-Dimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-iso-propyloxy-benzamide;
N-(3,3-Dimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(3,3-Dimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-iso-propyloxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-iso-propyloxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-iso-propyloxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-5-bromo-4-ethoxy-2-methoxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-acetyl-4-iso-propyloxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-methoxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro4-methoxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-iodo-4-methoxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-fluoro-4-methoxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-methoxybenzamide:
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-pentafluoroethylbenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-ethoxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-ethoxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-y )-2,4-dimethoxy-5-trifluoromethylbenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-methylbenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-ethylbenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3,5-dichloro-4-ethoxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-5-yl)-5-bromo-4-ethoxy-2-methoxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-5-yl)-5-cyano-2-ethoxy-4-iso-propylbenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-5-yl)-5-chloro-2-methoxy-4-iso-propyloxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-5-yl)-5-bromo-2-methoxy-4-iso-propylbenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-5-yl)-4-ethoxy-2-methoxy-5-trifluoromethylbenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-5-yl)-5-cyano-2,4-diethoxy-benzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-5-yl)-2,4-diethoxy-5-trifluoromethylbenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-5-yl)-2-methoxy-4-iso-propyl-5-trifluoromethylbenzamide;
N-(4,4-Dimethyl-1,2,3,4-tetrahydroisoquinolin-5-yl)-5-chloro-2-methoxy-4-iso-propoxybenzamide;
N-(4,4-Spirocyclopentyl-2-methyl-1,2,3,4-tetrahydroisoquin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(4,4-Spirocyclopentyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethyl benzamide;
N-(4,4-Spirocyclopentyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-iso-propyl benzamide;
N-(4,4-Spirocyclopentyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-iso-propyloxybenzamide:
N-(4,4-Spirocyclopentyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethylbenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-ethoxy-3-trifluoromethyl-benzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-iso-propyl-3-trifluoromethylsulfonylbenzamide;
N-(4,4-Dimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(8-Ethyl-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(8-Ethyl-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl )-4-methoxy-3-trifluoromethylbenzamide;
N-(8-Ethyl-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl )-3-bromo-4-iso-propyloxybenzamide;
N-(8-Ethyl-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-iso-propylbenzamide;
N-(8-Ethyl-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-acetyl-4-iso-propyloxybenzamide;
N-(5-Chloro-1,1,2-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-3-bromo-4-ethyl benzamide;
N-(5-Chloro-1,1,2-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-iso-propylbenzamide;
N-(5-Chloro-1,1,2-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(5-Chloro-1,1,2-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(1,2-Dimethyl-1,2,3,4-tetrahydroisoquinoline-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(1-Phenyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(1-Benzyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(1-Iso-propenyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(1-Allyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(1-Iso-butyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(1-Iso-propenyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-iso-propylbenzamide;
N-(1-Iso-propenyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-iso-propoxybenzamide;
N-(1-Iso-propenyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(1-Iso-propenyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethyl benzamide;
N-(1-Iso-propenyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-iso-propoxybenzamide;
N-(1-Iso-propyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(1,1,2-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-iso-propyl-benzamide;
N-(1,1,2-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethylbenzamide;
N-(1,1,2-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(1,1,2-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-iso-propoxybenzamide;
N-(2,3,3-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(2,3,3-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-iso-propylbenzamide;
N-(2,3,3-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethylbenzamide;
N-(2,3,3-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(2,3,3-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-iso-propoxybenzamide;
N-(4,4-Spirocyclobutyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-iso-propylbenzamide;
N-(4,4-Spirocyclobutyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(4,4-Spirocyclobutyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-iso-propoxybenzamide;
N-(4,4-Spirocyclobutyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(4,4-Spirocyclobutyl-2-methyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-ethoxy-3-trifluoromethylbenzamide;
N-(1,2,4,4-Tetramethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(1,2,4,4-Tetramethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-iso-propoxybenzamide;
N-(1,2,4,4-Tetramethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-iso-propylbenzamide;
N-(1,2,4,4-Tetramethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-iso-propoxybenzamide;
N-(1,2,4,4-Tetramethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethylbenzamide;
N-(1,2,4,4-Tetramethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(1,1,2,5-Tetramethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethylbenzamide;
N-(1,1,2,5-Tetramethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-iso-propylbenzamide;
N-(1,1,2,5-Tetramethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(1,1,2-Trimethyl-5-trifluoromethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(1,1,2-Trimethyl-5-trifluoromethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(1,1,2-Trimethyl-5-trifluoromethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-ethoxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-ethyl-3-trifluoromethyl-benzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-acetyl4-iso-propyl-benzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-acetyl-4-ethoxybenzamide;
N-[4,4-Dimethyl-2-(2-methoxyethyl)-1,2,3,4-tetrahydroisoquinolin-7-yl]-3-cyano-4-iso-propoxybenzamide;
N-[4,4-Dimethyl-2-(2-methoxyethyl)-1,2,3,4-tetrahydroisoquinolin-7-yl]-3-cyano-4-iso-propylbenzamide;
N-[4,4-Dimethyl-2-(2-methoxyethyl)-1,2,3,4-tetrahydroisoquinolin-7-yl]-4-methoxy-3-trifluoromethylbenzamide;
N-(8-Chloro-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-iso-propoxybenzamide;
N-(8-Chloro-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-ethyl-3-trifluoromethylbenzamide;
N-(8-Chloro-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-acetyl-4-iso-propylbenzamide;
N-(8-Chloro-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-methoxybenzamide;
N-(8-Chloro-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(8-Chloro-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-ethoxybenzamide;
N-(8-Chloro-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(8-Chloro-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-iso-propylbenzamide;
N-(8-Chloro-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-ethylbenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-iso-propoxy-3-trifluoromethylbenzamide;
N-(8-Ethyl-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-methoxybenzamide;
N-(8-Ethyl-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro4-methoxybenzamide;
N-(8-Ethyl-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-ethoxybenzamide;
N-(8-Ethyl-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethylbenzamide;
N-(8-Methyl-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(8-Methyl-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(8-Methyl-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-ethoxybenzamide;
N-(8-Methyl-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-cyano-4-ethylbenzamide;
N-(8-Bromo-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-methoxybenzamide;
N-(8-Bromo-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-acetyl-4-ethylbenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-ethoxy-3-propionylbenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-iso-propoxy-3-propionylbenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-iso-butyroyl-4-methoxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-ethoxy-3-iso-butyroyl benzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl )-3-iso-butyroyl-4-iso-propoxybenzamide;
N-(2,4,4-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-iso-butyroyl-4-n-propoxybenzamide;
N-(4,4-Dimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl )-3-acetyl-4-ethoxybenzamide;
N-(8-Bromo-4,4-dimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(4,4,8-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(4,4,8-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(4,4-Dimethyl-8-ethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(4,4-Dimethyl-8-ethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-(4,4-Dimethyl-8-ethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-ethoxybenzamide;
N-(8-Cyano-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(4,4-Dimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-methoxybenzamide;
N-(4,4,8-Trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-acetyl-4-ethoxybenzamide;
N-(4,4-Dimethyl-8-ethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-acetyl-4-ethoxybenzamide;
N-(4,4-Dimethyl-8-ethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-acetyl-4-methoxybenzamide;
N-(4,4-Dimethyl-8-ethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-propionyl benzamide;
N-(8-Chloro-4,4-dimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethylbenzamide;
N-(8-Bromo-2,3,3-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethyl benzamide;
N-(8-Chloro-2,3,3-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-ethoxy benzamide;
N-(8-Chloro-2,3,3-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-chloro-4-methoxy benzamide;
N-(8-Chloro-2,3,3-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-fluoro-4-methoxy benzamide;
N-(8-Chloro-3,3-dimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethyl benzamide;
N-(5-Iodo-1,1,2-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethyl benzamide;
N-(5-Cyano-1,1,2-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-4-methoxy-3-trifluoromethyl benzamide;
N-(8-Bromo-3,3-dimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl )-4-methoxy-3-trifluoromethylbenzamide;
N-(1,1,2,5-Tetramethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide;
N-[4,4-Dimethyl-2-(2-methoxyethyl)-1,2,3,4-tetrahydroisoquinolin-7-yl]-3-bromo-4-iso-propoxybenzamide, and;
N-(6-Bromo-2,4,4-trimethyl-1,2,3,4-tetrahydroisoquinolin-7-yl)-3-bromo-4-ethoxybenzamide.
When synthesised, these compounds are often in salt form, such as the hydrochloride or trifluoroacetate, and such salts also form part of this invention. Such salts may be used in preparing pharmaceutically acceptable salts. The compounds and their salts may be obtained as solvates, such as hydrates, and these also form part of this invention.
The above compounds and pharmaceutically acceptable salts thereof, especially the hydrochloride, and pharmaceutically acceptable solvates, especially hydrates, form a preferred aspect of the present invention.
The administration of such compounds to a mammal may be by way of oral, parenteral, sub-lingual, nasal, rectal, topical or transdermal administration.
An amount effective to treat the disorders hereinbefore described depends on the usual factors such as the nature and severity of the disorders being treated and the weight of the mammal. However, a unit dose will normally contain 1 to 1000 mg, suitably 1 to 500 mg, for example an amount in the range of from 2 to 400 mg such as 2, 5, 10, 20, 30, 40, 50, 100, 200, 300 and 400 mg of the active compound. Unit doses will normally be administered once or more than once per day, for example 1, 2, 3, 4, 5 or 6 times a day, more usually 1 to 4 times a day, such that the total daily dose is normally in the range, for a 70 kg adult of 1 to 1000 mg, for example 1 to 500 mg, that is in the range of approximately 0.01 to 15 mg/kg/day, more usually 0.1to 6 mg/kg/day, for example 1 to 6 mg/kg/day.
It is greatly preferred that the compound of the invention is administered in the form of a unit-dose composition, such as a unit dose oral, including sub-lingual, rectal, topical or parenteral (especially intravenous) composition.
Such compositions are prepared by admixture and are suitably adapted for oral or parenteral administration, and as such may be in the form of tablets, capsules, oral liquid preparations, powders, granules, lozenges, reconstitutable powders, injectable and infusable solutions or suspensions or suppositories. Orally administrable compositions are preferred, in particular shaped oral compositions, since they are more convenient for general use.
Tablets and capsules for oral administration are usually presented in a unit dose, and contain conventional excipients such as binding agents, fillers, diluents. tabletting agents, lubricants, disintegrants, colorants, flavourings, and wetting agents. The tablets may be coated according to well known methods in the art. Suitable fillers for use include cellulose, mannitol, lactose and other similar agents. Suitable disintegrants include starch, polyvinylpyrrolidone and starch derivatives such as sodium starch glycollate. Suitable lubricants include, for example, magnesium stearate. Suitable pharmaceutically acceptable wetting agents include sodium lauryl sulphate.
These solid oral compositions may be prepared by conventional methods of blending, filling, tabletting or the like. Repeated blending operations may be used to distribute the active agent throughout those compositions employing large quantities of fillers. Such operations are, of course, conventional in the art.
Oral liquid preparations may be in the form of, for example, aqueous or oily suspensions, solutions, emulsions, syrups, or elixirs, or may be presented as a dry product for reconstitution with water or other suitable vehicle before use. Such liquid preparations may contain conventional additives such as suspending agents, for example sorbitol, syrup, methyl cellulose, gelatin, hydroxyethylcellulose, carboxymethyl cellulose, aluminium stearate gel or hydrogenated edible fats, emulsifying agents, for example lecithin, sorbitan monooleate, or acacia; non-aqueous vehicles (which may include edible oils), for example, almond oil, fractionated coconut oil, oily esters such as esters of glycerine, propylene glycol, or ethyl alcohol; preservatives, for example methyl or propyl p-hydroxybenzoate or sorbic acid, and if desired conventional flavouring or colouring agents. Oral formulations also include conventional sustained release formulations, such as tablets or granules having an enteric coating.
For parenteral administration, fluid unit dose forms are prepared containing the compound and a sterile vehicle. The compound, depending on the vehicle and the concentration, can be either suspended or dissolved. Parenteral solutions are normally prepared by dissolving the compound in a vehicle and filter sterilising before filling into a suitable vial or ampoule and sealing. Advantageously, adjuvants such as a local anaesthetic, preservatives and buffering agents are also dissolved in the vehicle. To enhance the stability, the composition can be frozen after filling into the vial and the water removed under vacuum.
Parenteral suspensions are prepared in substantially the same manner except that the compound is suspended in the vehicle instead of being dissolved and sterilised by exposure to ethylene oxide before suspending in the sterile vehicle. Advantageously, a surfactant or wetting agent is included in the composition to facilitate uniform distribution of the.
As is common practice, the compositions will usually be accompanied by written or printed directions for use in the medical treatment concerned.
Accordingly, the present invention further provides a pharmaceutical composition for use in the treatment and/or prophylaxis of anxiety, mania, depression, panic disorders and/or aggression, disorders associated with a subarachnoid haemorrhage or neural shock, the effects associated with withdrawal from substances of abuse such as cocaine, nicotine, alcohol and benzodiazepines, disorders treatable and/or preventable with anti-convulsive agents, such as epilepsy including post-traumatic epilepsy, Parkinson""s disease, psychosis, migraine, cerebral ischaemia, Alzheimer""s disease and other degenerative diseases such as Huntingdon""s chorea, schizophrenia, obsessive compulsive disorders (OCD), neurological deficits associated with AIDS, sleep disorders (including circadian rhythm disorders, insomnia and narcolepsy), tics (e.g. Giles de la Tourette""s syndrome), traumatic brain injury, tinnitus, neuralgia, especially trigeminal neuralgia, neuropathic pain, dental pain, cancer pain, inappropriate neuronal activity resulting in neurodysthesias in diseases such as diabetes, multiple sclerosis (MS) and motor neurone disease, ataxias, muscular rigidity (spasticity), temporomandibular joint dysfunction, and amyotrophic lateral sclerosis (ALS) which comprises a compound of formula (I), or a pharmaceutically acceptable salt or solvate thereof, and a pharmaceutically acceptable carrier.
The present invention also provides a method of treatment and/or prophylaxis of anxiety, mania, depression, panic disorders and/or aggression, disorders associated with a subarachnoid haemorrhage or neural shock, the effects associated with withdrawal from substances of abuse such as cocaine, nicotine, alcohol and benzodiazepines, disorders treatable and/or preventable with anti-convulsive agents, such as epilepsy including post-traumatic epilepsy, Parkinson""s disease, psychosis, migraine, cerebral ischaemia, Alzheimer""s disease and other degenerative diseases such as Huntingdon""s chorea, schizophrenia, obsessive compulsive disorders (OCD), neurological deficits associated with AIDS, sleep disorders (including circadian rhythm disorders, insomnia and narcolepsy), tics (e.g. Giles de la Tourette""s syndrome), traumatic brain injury, tinnitus, neuralgia, especially trigeminal neuralgia, neuropathic pain, dental pain, cancer pain, inappropriate neuronal activity resulting in neurodysthesias in diseases such as diabetes, multiple sclerosis (MS) and motor neurone disease, ataxias, muscular rigidity (spasticity), temporomandibular joint dysfunction, and amyotrophic lateral sclerosis (ALS) comprising administering to the sufferer in need thereof an effective or prophylactic amount of a compound of formula (I), or a pharmaceutically acceptable salt or solvate thereof.
In a further aspect the invention provides the use of a compound of formula (I), or a pharmaceutically acceptable salt or solvate thereof, for the manufacture of a medicament for the treatment and/or prophylaxis of anxiety, mania, depression, panic disorders and/or aggression, disorders associated with a subarachnoid haemorrhage or neural shock. the effects associated with withdrawal from substances of abuse such as cocaine, nicotine, alcohol and benzodiazepines, disorders treatable and/or preventable with anti-convulsive agents, such as epilepsy including post-traumatic epilepsy, Parkinson""s disease, psychosis, migraine, cerebral ischaemia, Alzheimer""s disease and other degenerative diseases such as Huntingdon""s chorea, schizophrenia, obsessive compulsive disorders (OCD), neurological deficits associated with AIDS, sleep disorders (including circadian rhythm disorders, insomnia and narcolepsy), tics (e.g. Giles de la Tourette""s syndrome), traumatic brain injury, tinnitus, neuralgia, especially trigeminal neuralgia, neuropathic pain, dental pain, cancer pain, inappropriate neuronal activity resulting in neurodysthesias in diseases such as diabetes, multiple sclerosis (MS) and motor neurone disease, ataxias, muscular rigidity (spasticity), temporomandibular joint dysfunction, and amyotrophic lateral sclerosis (ALS).
In a further aspect the invention provides the use of a compound of formula (I), or a pharmaceutically acceptable salt or solvate, thereof as a therapeutic agent, in particular for the treatment and/or prophylaxis of anxiety, mania, depression, panic disorders and/or aggression, disorders associated with a subarachnoid haemorrhage or neural shock, the effects associated with withdrawal from substances of abuse such as cocaine, nicotine, alcohol and benzodiazepines, disorders treatable and/or preventable with anti-convulsive agents, such as epilepsy including post-traumatic epilepsy, Parkinson""s disease, psychosis, migraine, cerebral ischaemia, Alzheimer""s disease and other degenerative diseases such as Huntingdon""s chorea, schizophrenia, obsessive compulsive disorders (OCD), neurological deficits associated with AIDS, sleep disorders (including circadian rhythm disorders, insomnia and narcolepsy), tics (e.g. Giles de la Tourette""s syndrome), traumatic brain injury, tinnitus, neuralgia, especially trigeminal neuralgia, neuropathic pain, dental pain, cancer pain, inappropriate neuronal activity resulting in neurodysthesias in diseases such as diabetes, multiple sclerosis (MS) and motor neurone disease, ataxias, muscular rigidity (spasticity), temporomandibular joint dysfunction, and amyotrophic lateral sclerosis (ALS).
Another aspect of the invention is a process for the preparation of compounds of formula (I) as herein before described or salts thereof or solvates thereof which comprises reacting a compound of formula (II)
where RA, R1A, R3A, R4A are R, R1, R3, R4 as defined for formula (I) or a group or groups convertible to R, R1, R3, R4 with a compound of formula (III)
where Y is Cl or OH, and R2A groups are independently R2 as defined for formula (I) or a group or groups convertible to R2, and where required converting an RA, R1A, R2A, R3A, R4A group to a R, R1, R2, R3, R4 group, converting one R, R1, R2, R3, R4 group to another R, R1, R2, R3, R4 group, or converting a salt product to the free base or another pharmaceutically acceptable salt, or separating any enantiomers, or converting a free base product to a pharmaceutically acceptable salt.
Reaction of a compound of formula (III) which is a benzoyl chloride derivative (Y=Cl) will lead directly to the hydrochloride salt. Suitable solvents include ethyl acetate or dichloromethane, optionally in the presence of a base such as triethylamine. When the compound of formula (III) is a benzoic acid derivative (Y=OH), conventional conditions for condensation of aromatic acids with amines may be used, for example reacting the components in a mixture of ethyl-(dimethylaminopropyl)-carbodiimide/hydroxybenzotriazole in a suitable inert solvent such as dimethyl formamide.
Conversions of an RA, R1A, R2A, R3A, R4A group to a R, R1, R2, R3, R4 group typically arise when a protecting group is needed during the above coupling reaction or during the preparation of the reactants by the procedures described below. Interconversion of one R, R1, R2, R3, R4 group to another typically arises when one compound of the invention is used as the immediate precursor of another compound of the invention or when it is easier to introduce a more complex or reactive substituent at the end of a synthetic sequence.
Compounds of formula (II) when R4=H or alkyl may be prepared from the corresponding isoquinoline of formula (IV)
by reaction with a compound R1AZ where Z is a leaving group such as halogen, especially iodo, or tosylate to obtain an intermediate of formula (V)
which is reacted with an R4A containing Grignard reagent under conventional conditions to obtain a dihydroisoquinoline of formula (VI)
which can be hydrogenated, for example using hydrogen and a palladium/activated carbon catalyst, to obtain a tetrahydroisoquinoline of formula (II). Alternatively the compound of formula (IV) may be a nitro-isoquinoline, and the nitro group is converted to an amino group in the hydrogenation step.
When the intended R1 is hydrogen, the N of the isoquinoline is preferably protected conventionally, for example by making R1A benzyl, or 4-methoxybenzyl during introduction of the R4 group via the Grignard reagent. Again protection is preferably provided prior to formation of the benzamide, for example by tert.-butoxycarbonyl and then deprotected under standard conditions, for example using trifluoroacetic acid/methylene chloride.
Amino/nitro-isoquinolines of formulae (IV) and the reagents used are commercially available, or can be prepared from commercially available materials using conventional procedures described in the literature (eg. I. W. Matheson et al, J. Med. Chem. 1973, 16, 332).
Compounds of formula (II) with di-R3 substitution and X is hydrogen may be prepared from the corresponding nitro-isoquinoline dione of formula (VII), by converting the nitro group to amino by catalytic hydrogenation as above and subsequently removing the dione groups by reduction with diborane. The nitro-dione may be obtained by treating a di-R3 isoquinoline dione [prepared using the procedure of H. Takechi et al., Synthesis. 1992, 778] with fuming nitric acid. R1A groups may be introduced as described above.
Compounds of formula (II) where both R4 are alkyl may be prepared from the corresponding 1-alkyl-3,4-dihydroisoquinoline by nitration [using procedures by R. D. Larsen et al, J. Org. Chem., 1991 56 6034 and A. P. Venkov and S. S. Abeghe, Syn. Commun., 1996 26 127] followed by quaternisation and treatment with an R4 Grignard reagent as described above.
Compounds of formula (II) where R is alkyl may be prepared from the corresponding phenylethylamines using the modified Pictet-Spengler procedure of T. J. N. Watson J. Org. Chem., 1998, 63, 406.
When the substituent X is other than hydrogen it may be introduced during any of the procedures above, or may be present on commercially available starting materials usable in the above described procedures. Most suitably the substituent X is introduced into an amino/nitro compound of formula (II) in which X is hydrogen. For example X as halogen may be incorporated directly by halogenation or via an amino group using Sandmeyer chemistry as illustrated in the descriptions below. Interconversions of X=halogen to X=alkyl or trifluoroacetyl may be carried out using Pd(0) or Cu(I) chemistry respectively as detailed below.
Compounds of formula (III) may be prepared by further substitution of commercially available benzoic acid derivatives using conventional procedures, or by oxidation of corresponding substituted benzyl alcohols. Alternatively benzoic acids can be prepared from correpondingly substituted phenols, for example by formation of the acetate, conversion to an acetophenone and then to the desired acid.
Where the above described intermediates are novel compounds, they also form part of this invention.

Substituted isoquinoline derivatives and their use as anticonvulsivants


Method and system for dynamical sensor geometry by means of formation control of sensor carrying craft, which operate below the water surface, on the ground, at the water surface and/or in the air, are manned and/or unmanned, and which are provided with one or more sensors. The sensors are arranged on the sensor carrying craft, and/or arranged with the sensor carrying craft in other suitable ways, such as towed behind the craft.

The invention relates to a method for dynamic sensor geometry by means of formation control of sensor carrying craft to achieve desired sensor geometry. The invention also relates to a system for performing the method.
Today, craft are provided with different kinds of sensor systems for data collection. Typical sensors/applications may be: multibeam echo sounders/subsea survey, sonar/fishing, sonar/mine detecting, hydrophones/maritime seismology, laser scanner/topographical survey and similar.
The craft's sensor systems will have a limited coverage. This is commonly solved by running the sensor carrier (the craft) in repetitive and partly overlapping patterns in order to be able to interpolate the measured results to a general measured result over a given area. Sensor carrying craft typically have a very high amount of daily use. To increase the efficiency of craft based data collection, there are three obvious alternatives:                1. Increase the speed of the sensor carriers, thereby covering a larger area per unit time;        2. Increase the coverage of the sensors; and        3. Increase the number of sensors.
The speed at which the measuring can be performed (the speed of the craft) is often limited due to limitations in measuring technique (quality of measured data).
The coverage of the sensors may also be limited by the measuring technique. Often it is desirable to have a high sensor resolution, so the effective search area of the sensor must therefore be low.
Increasing the number of sensors is not without thought a possible solution, as the sensors still are dependent of being arranged to the craft, and thus will have overlapping coverage.
It is not known publications which disclose or suggest methods for achieving a desired sensor geometry by means of formation control of sensor carrying craft.


A system includes: a processor; and a memory, wherein the memory stores instructions that, when executed by the processor, cause the processor to: retrieve a first log over a network from a first server of a plurality of servers for at least one contact center; generate an index of values in the first log; update an index database based on the index; and save the first log on a storage device.

When providing technical support for computer systems, support specialists often use log files generated by various components of the systems to diagnose technical issues. Such logs are generally stored in various locations scattered across various computers (e.g., servers) of the software system and across the file systems of those computers, thereby complicating collecting those logs from a customer computer system installation.
In addition, the various servers of the software systems often have limited storage space available for logs, thereby reducing the detail of the information and length of the history. This loss of detail and reduced history length may make diagnosis of the customer's technical issues difficult or impossible.

This patent is subject to a terminal disclaimer.


A method of starting a permanent magnet machine. A machine stator voltage in a stationary reference frame is sensed. An initial speed of a rotor of the machine is estimated based on the sensed voltage, and state variables of control algorithms are initialized based on the estimated initial speed. This method can provide smooth startup and/or restart at any speed.

Interior permanent magnet machines are used in many different applications, including but not limited to vehicle applications. For example, IPM machines may be used in vehicle alternator-starter systems to provide engine cranking for engine starts and to generate power for vehicle electrical loads. In some vehicles, energy is saved and emissions are reduced by "on-and-off" operation, that is, by turning the engine on and off based on emission and gas consumption levels. Such engines may need repeated starting, for example, during urban stop-and-go operation.
A number of circumstances can affect the performance of an IPM machine during restart, not only in vehicle applications but also in other applications. For example, a fault in a processor controlling an IPM machine could cause the machine to lose synchronization. It is desirable for IPM machines to start up and restart smoothly in such situations.

Start-up and restart of interior permanent magnet machines


The new active ingredient derivative compounds have the formula (I) ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 are the same or different and are each an unsubstituted or substituted alkyl group, Y is an unsubstituted or substituted alkylene group, R is an active ingredient group which, prior to ester formation, has at least one OH group and A.sup.- is an anion. A process for making the compounds of formula (I) is described. Hair treatment compositions containing these compounds and methods of treating hair with these hair treatment compositions are also described.

The present invention relates to hydrolytically cleavable active ingredient derivative compounds, to hair treatment compositions containing them and to methods of treating hair with those compositions.
A number of different active ingredients are used for beautification and care of hair or for protection of hair. Some of these active ingredients only remain on the hair for a short application period (for example, permanent wave compositions) and are rinsed out of the hair afterwards, while other active ingredients remain on the hair and act on it for a certain predetermined acting time. Hair fixing compositions and hair sprays, which maintain their action until subsequent contact with water or moisture, or hair rinses and hair care compositions, which remain on the hair until subsequent washing of the hair, or temporary and/or semi-permanent hair dye compositions ("Hair tinting compositions"), which remain on the hair over a more or less extended period of time according to their service life while the intensity of color of the dyed hair decreases with each hair washing, can be named among those latter active ingredients.
To an increasing extent the need has arisen to extend the acting time of active ingredients contained in hair treatment compositions in order to provide long-term protection and/or long-term care of the hair. A special value is placed on a high resistance of the active ingredient to being washed out, so that the action of the active ingredient is maintained also after many hair washings.
Also there is an urgent requirement to make a weakly soluble or insoluble active ingredient and an active ingredient with a reduced penetration ability available for use in cosmetic compositions.

Hydrolytically cleavable active ingredient derivative compounds, hair treatment compositions containing them and hair treatment methods


A liquid droplet jetting head, having: a plurality of dividing walls to divide a plurality of flow channels, wherein at least a portion of the dividing wall is formed with a piezoelectric element; a flow path having a rectangular tubular from formed by an upper wall to close an upper surface of the flow path along an array direction of the plurality of the flow paths, and a lower wall to close a lower surface of the flow path; a nozzle to jet liquid in the flow path as the liquid droplet; and two driving electrodes formed independently on each wall surface of the dividing wall in a longitudinal direction of the flow path having the rectangular tubular form, wherein the nozzle is formed on either the upper wall or the lower wall.

The present invention relates to a liquid droplet jetting head to jet liquid from a nozzle and a liquid droplet jetting apparatus.
In a liquid jetting head to jet a liquid droplet from a nozzle such as an inkjet head (hereafter may called just head) to record an image by using a minimal ink droplet, a pressure generating device applies a pressure to a pressure generating chamber to jet the ink droplet from the nozzle so as to land the ink droplet on a recording medium like a recording sheet.
Conventionally, so called shear mode type ink jet recording head (hereinafter also called shearing mode head) has been known in which an actuator substrate is configured by forming a number of channels on a polarized piezoelectric element, a cover plate is bonded on an upper surface of the actuator substrate so as to form a number of pressure generating chambers separated by the aforesaid piezoelectric element, an electric field is applied to the piezoelectric element between the adjacent pressure generating chambers so as to deform the piezoelectric element and to jet ink from a nozzle hole formed on the cover plate or a bottom surface of the actuator substrate (Patent document 1).
Patent document 1: Japanese Patent Non-Examined Publication No. 2001-162795
In recent years, highly-functional and high quality inkjet printers are being demanded which are capable of multi step tone reproduction and resolution change, for example 300 dpi and 600 dpi to realize a high-resolution print image.
In a head disclosed in the Patent document 1, ink is jetted from the nozzle by driving the piezoelectric elements of the pressure chambers which are provided for each of nozzles one-on-one. Thus as a method to change an amount of ink droplet, it is considered that an injection amount of ink droplet is changed in accordance with driving condition such as a voltage value of a driving pulse applied to the piezoelectric element. However, usually, it was difficult to change the driving condition to a large degree so as to change a diameter of the ink droplet. In particular, it was not possible to control the amount of ink droplet without changing a speed of the ink droplet.
Further, as the other method, it is also considered that the ink droplets are shot redundantly a plurality of times for one dot by using a nozzle to jet small ink droplets and the number of shots is controlled for contrast control. In this method, a variable contrast image can be outputted consistently in a sufficiently high quality though, a decrease of a printing speed is caused since the ink jetting is carried out the plurality of times.
Also, as yet another method, it is considered that a plurality of nozzles having different ink jetting amount are disposed and combined selectively to reproduce contrast. In this case, though a level of contrast increase, there is a problem that a cost of manufacturing the head increases as the recording head becomes large.

Liquid jetting head and liquid jetting apparatus


A semiconductor memory apparatus that accelerates the reading of data is provided with a memory cell, bit lines each sectioned into at least two portions, a device for reading data from a memory cell, each provided in between and connecting sectioned bit lines, and a device for connecting one of divided bit lines to the device for reading data or disconnecting connected one of sectioned bit lines from the device for reading data, depending on the position of the memory cell to be read.

A conventional NAND-type flash memory requires a data transfer time (random access time) of about 7 μs to transfer data from a memory cell to a page buffer circuit. This time period depends on the layout of a memory cell array and the method of fetching data.
FIG. 1 is a block diagram showing the entire configuration of a general NAND-type flash memory. As showed in FIG. 1, the conventional general NAND-type flash memory 1 is provided with the following: a logic controller 3, a control circuit 5, an I/O control circuit 7, a command register 9, an address register 11, a status register 13, a state representation circuit 15, a terminal 16, a high voltage generation circuit 17, a row address buffer 19, a row address decoder 21, a memory cell array 23, a column address buffer 25, a column decoder 26, a data register 27, a bus OBUS, a sense amp 28, and an N-channel MOS transistor NT1.
A page buffer circuit PB is configured by the data register 27 and the sense amp 28. Additionally, the data register 27 includes the data latch circuit DL configuring the page buffer circuit PB, and the sense amp 28 includes a sense amp circuit SA configuring the page buffer circuit PB.
In the above NAND-type flash memory, the logic controller 3 is provided with a command enable signal /CE, a command latch enable signal CLE, an address latch enable signal ALE, a write enable signal /WE, and a read enable signal /RE.
On the other hand, the I/O control circuit 7 is connected to input terminals 6 to which signals I/O0-I/O7 are provided, further connected to the status register 13, and provided with the command latch enable signal CLE, the address latch enable signal ALE, the write enable signal /WE, and an internal power supply voltage Vccq. The command register 9 and the address register 11 are connected to the I/O control circuit 7. The status register 13, the state representation circuit 15, and the high voltage generation circuit 17 are connected to the control circuit 5. The gate of the N-channel MOS transistor NT1 is connected to the state representation circuit 15 with its source being grounded and its drain being connected to the terminal 16 that outputs a busy signal /BY.
Additionally, the row address buffer 19 is connected to the address register 11, and the row address decoder 21 and the memory cell array 23 are connected to the high voltage generation circuit 17. Furthermore, the row address decoder 21 is connected to the control circuit 5, and the memory cell array 23 is connected to the row address decoder 21.
Additionally, the column address buffer 25 is connected to the address register 11, and the column decoder 26 is connected to the column address buffer 25. The data register 27 is connected to the I/O control circuit 7 via the bus OBUS and further to the column decoder 26. Furthermore, the sense amp 28 is connected between the data register 27 and the memory cell array 23, and further connected to the control circuit 5.
FIG. 2 is a schematic drawing showing the layout of the memory cell array 23 showed in FIG. 1, and FIG. 3 is a circuit diagram showing the equivalent circuit of the memory cell array 23 showed in FIG. 2. As showed in FIG. 2, the following are formed in the memory cell array 23: a plurality of bit lines BL connected to the page buffer circuit PB, a plurality of word lines WL0a-WL15a, WL0b-WL15b, and WL0c-WL15c, a plurality of select gate lines SG1a, SG2a, SG1b, SG2b, SG1c, the word lines and the select gate lines being perpendicular to the bit lines BL, a plurality of select gate transistors SGTr, and a plurality of memory cells MC, the select gate transistors SGTr and the memory cells MC being described later. The memory cells MC and the select gate transistors SGTr that are connected serially are connected to the bit lines BL via the bit line contact units BC.
On the other hand, FIG. 3(a) shows the entire configuration of the memory cell array 23, and FIG. 3(b) is a circuit diagram showing the configuration of a portion 29 showed in FIG. 3(a). In addition, in FIG. 3(a), the memory cell array 23 is simplified.
As showed in FIG. 3(a), the memory cell array is configured by a series of (N+1) blocks from the 0th block to the Nth block provided in the direction of the bit line BL. The memory cell array includes the bit lines BL connected to the page buffer circuit PB. And, as showed in FIG. 3(b), each block configuring the NAND-type flash memory includes a string ST connected to the bit lines BL. The string includes a plurality of serially connected memory cells MC and the select gate transistors SGTr serially connected on both sides.
A corresponding word line WL0a-WL15a, WL0b-WL15b, or WL0c-WL15c is connected to each gate of the above memory cell MC configured by a flash memory. A corresponding select gate line SG1a, SG2a, SG1b, SG2b, SG1c, or SG2c is connected to each gate of the select gate transistor SGTr.
Additionally, in the above configuration, the size of the page buffer circuit PB is correspondingly determined based on the page size, 528 bytes (4,224 bits), for example, being the unit of writing and reading of data of the NAND-type flash memory. When data are transferred, the page buffer amplifies and latches a whole page of data.
FIG. 4 is a circuit diagram showing the configuration of the page buffer circuit PB showed in FIG. 1. As showed in FIG. 4, the page buffer circuit PB is provided with the sense amp circuit SA, a data latch circuit DL, a tri-state buffer TSB, and N-channel MOS transistors NT2 and NT8.
The sense amp circuit SA includes N-channel MOS transistors NT9, NT10, and a P-channel MOS transistor PT3. The data latch circuit DL includes a latch circuit 30 and N-channel MOS transistors NT6 and NT7. And the tri-state buffer TSB includes N-channel MOS transistors NT3-NT5 and P-channel MOS transistors PT1 and PT2.
Here, the source and drain of the N-channel MOS transistor NT2 are connected in series to the bus OBUS, and a signal YD1 is provided to its gate from the column decoder 26. Additionally, the signal LD is provided from the control circuit 5 to the gate of the N-channel MOS transistor NT5 and the gate of the P-channel MOS transistor PT2 and the signal RD is provided from the control circuit 5 to the gate of the N-channel MOS transistor NT3. Likewise, a signal SET is provided from the control circuit 5 to the gate of the N-channel MOS transistor NT7, and a signal PGMON is provided from the control circuit 5 to the gate of the N-channel MOS transistor NT8.
Additionally, a signal BLCNTRL is provided from the control circuit 5 to the gate of the N-channel MOS transistor NT9. A signal DIS is provided from the control circuit 5 to the gate of the N-channel MOS transistor NT10, and a signal PBIAS is provided from the control circuit 5 to the gate of the P-channel MOS transistor PT3. In addition, the source and drain of the N-channel MOS transistor NT9 are connected in series to the bit line BL.
In the page buffer circuit PB configured as described above, a high level signal BLCNTRL provided to the gate of the N-channel MOS transistor NT9 connects the bit line BL to the sense amp circuit SA. In addition, when data are transferred, a low level signal PBIAS provided to the gate of the P-channel MOS transistor PT3 causes the P-channel MOS transistor PT3 to provide sense current Iref to the bit line BL.
Additionally, the N-channel MOS transistor NT10, when a high level signal DIS is provided to its gate, discharges the bit line BL. In the initial stage of data transfer, when the N-channel MOS transistor NT8 is turned on in response to a signal PGMON, the N-channel MOS transistor NT10 resets the node A included in the latch circuit 30 to a low level.
On the other hand, the N-channel MOS transistors NT6 and NT7 are serially connected to a node B included in the latch circuit 30. The gate of the N-channel MOS transistor NT6 is connected to a node SNS. Accordingly, the N-channel MOS transistor NT6 turns on and off in response to data amplified by the sense amp SA. The data are latched by the latch circuit 30 in response to a signal SET provided to the gate of the N-channel MOS transistor NT7.
The above signals RD and LD turn to a high level when data are read from and loaded to the memory cell MC, respectively. For example, when the signal RD is turned to a high level, the tri-state buffer TSB is enabled. During this period, the tri-state buffer TSB inversely amplifies the signal level at the node A, and provides data generated by inversely amplifying to the bus OBUS via the N-channel MOS transistor NT2.
On the other hand, the signal LD, when it turns to a high level, disables the tri-state buffer TSB. Data are provided to the node A from the bus OBUS via the N-channel MOS transistor NT2 and NT5.
The data transfer operation of the NAND-type flash memory configured as above will be described by reference to timing charts showed in FIGS. 5 and 6 as follows. FIG. 5 shows timing in which data "0" of the memory cell array showed in FIGS. 2 and 3 are transferred.
As showed in FIG. 5(a), a command latch enable signal CLE is turned to a high level (H) at time T1 to start data transfer, and as showed in FIG. 5(c), a write enable signal /WE is turned to a low level (L). In response to these signals, as showed in FIG. 5(d), the flash memory acquires a command through the I/O terminal 6. This command is latched in the command register 9 when the write enable signal /WE turns to the high level (also referred to as "rise"). As showed in FIG. 5(g), in response to the above command indicating an instruction of the reading of data, the control circuit 5 turns the signal RD to a high level.
As showed in FIG. 5(b), an address latch enable signal ALE is turned to a high level at time T2, and as showed in FIG. 5(c), an address Add is input by toggling the write enable signal /WE. This address Add is latched by the address register 11 in response to a rise in the write enable signal /WE as well as the above command.
After the inputting of the address, the device automatically starts the data transfer operation. Specifically, as showed in FIGS. 5(e) and (f), the control circuit 5 turns a signal DIS and the signal PGMON to high levels at time T3. In response to this, as showed in FIGS. 5(n) and (o), the nodes A and B of the data latch circuit DL included in the page buffer circuit PB showed in FIG. 4 are reset to a low level and a high level, respectively.
In this case, as showed in FIGS. 5(j) and (k), select gate lines SG1a and SG2a of the selected block in the memory cell array are each activated to a high level of 4 V, for example, at time T4. Additionally, a selected word line is turned to a low level of 0 V, for example, and an unselected word line is turned to a high level of 4 V, for example.
Now, as showed in FIG. 5(i), a signal BLCNTRL is turned to a high level of 1.5 V, for example, and as showed in FIG. 5(h), a signal PBIAS is lowered so that a sense current Iref showed in FIG. 4 becomes a desired level of 1 μA, for example.
Therefore, the sense amp circuit SA included in the page buffer circuit PB is connected to the bit line BL, and the above sense current Iref flows in the bit line BL. And voltage caused by the difference between the sense current Iref and the current that flows through the selected memory cell MC appears as the voltage of the node SNS showed in FIG. 5(m).
When the memory cell MC does not stores data "0" as described above, no current flows in the memory cell MC. Accordingly, as showed in FIG. 5(m), the voltage at the node SNS starts rising at time T5 due to the above sense current Iref. And, as showed in FIG. 5(l), the control circuit 5 has a signal SET transit to a high level at time T6 after a long enough time passes for the voltage of the node SNS to be stabilized at a high level.
Because, as showed in FIG. 5(m), the voltage of the node SNS is at a high level, the N-channel MOS transistor NT7 showed in FIG. 4 turns on, and the node B of the data latch circuit DL is drawn to the low level. As showed in FIGS. 5(n) and (o), the node A turns to a high level and the node B turns to a low level at time T7. In response to this, data output at the node A are inverted by the tri-state buffer TSB, and data "0" are provided to the I/O control circuit 7 via the bus OBUS. The I/O control circuit 7 outputs data "0" to the exterior through the I/O pins 6.
The reading operation of data "0" in the case of a conventional NAND-type flash memory has been described above. The transfer operation of data "0" of the memory cell array showed in FIGS. 2 and 3 will be described by reference to FIG. 6. Since the inputting of the command and the address is the same as the reading operation of data "0" described above, its description will not be given.
As showed in FIGS. 6(e) and (f), the control circuit 5 turns the signal DIS and the signal PGMON to high levels at time T3 after the inputting of the address. Consequently, in the data latch circuit DL showed in FIG. 4, the node A and the node B are reset to a low level and a high level, respectively. The select gate lines SG1a and SG2a included in a selected block in the memory cell array are each turned to a high level at time T4, a selected word line is turned to a low level, and an unselected word line is turned to a high level.
As showed in FIG. 6(i), the signal BLCNTRL is turned to a high level at time T5, and the signal PBIAS is lowered so that the sense current Iref showed in FIG. 4 becomes at a desired level.
The sense amp circuit SA included in the page buffer circuit PB is connected to the bit line BL, and the above sense current Iref flows through the bit line BL. The difference between the sense current Iref and the current flowing through the selected memory cell MC results in voltage at the node SNS showed in FIG. 6(m).
Now, when the memory cell MC stores data "1" as described above, the memory cell MC causes the current flow so that, as showed in FIG. 6(m), the node SNS is discharged to a low level. And, the control circuit 5 has the signal SET transit to a high level at time T6 after a long enough time passes for the voltage of the node SNS to stabilize at a low level.
At this point, since the voltage of the node SNS is at a low level as showed in FIG. 6(m), the node B of the data latch circuit DL sustains a high level state, and, as showed in FIGS. 6(n) and (o), the nodes A and B become at a low level and at a high level, respectively. Consequently, data output at the node A are inverted by the tri-state buffer TSB, and data "1" are provided to the I/O control circuit 7 through the bus OBUS. In addition, the I/O control circuit 7 outputs the data "1" to the exterior through the I/O terminal 6.
In accordance with the above description, time required for completing the reading operation (data transfer) of data "0" is, as showed in FIG. 5, the sum of the time period Ta from time T3 to time T4 and time period Tb from time T4 to time T7. The time Ta is, as described above, time required to reset the data latch circuit DL and to set the select gate lines SG1a, SG2a, in a selected block, and the unselected word line at a high level. The time Tb is time required to charge the bit line BL with the sense current Iref so that the voltage of the node SNS is stabilized at the high level. The above times Ta and Tb may overlap depending on the case.
In addition, the above time Tb depends on the following: the capacitance and resistance of the bit line BL, the capacitance of the diffusion layer of the select gate transistor SGTr connected to the bit line BL, and the above sense current Iref.


A method and an apparatus for producing an adhesive tape are disclosed in which an adhesive tape is produced while a liquid reservoir is almost hermetically sealed by bringing a blade into contact with an upper laminate roller, and supplement of adhesive to the liquid reservoir is controlled so that the liquid surface of the adhesive reserved in the liquid reservoir comes into contact with the back face of the blade.

(1) Field of the Invention
The invention relates to a method and apparatus for producing an adhesive tape by supplying and applying an adhesive on a base material, and an adhesive tape.
(2) Description of the Relates Art
Conventionally, an adhesive tape is produced by means of a direct system in which an adhesive is applied as an application solution by an application roller on an elongated base material such as paper, plastic film or the like, or by means of a reverse system. These means are made up of a pair of laminate rollers 40 and 50 on which base materials 90 and 100 are wound, and which are oppositely disposed to each other while facing with a liquid reservoir 80 opened to air, as shown in FIG. 1.
In the above means, when the applying speed is high or when the viscosity of the adhesive is high, in particular, a phenomenon markedly arises that an air cell B in the liquid reservoir 80 is rolled together (involved) with rotation of the upper laminate roller 40. As a measure for avoiding involvement of air cells, for example, the following measures are proposed. First, there is proposed and practiced a measure which separates a liquid reservoir into a front part and a rear part along the width direction of a base material by means of a surface of a base material whose distal end is wound on a lower laminate roller, or by an air cell scraping-off plate provided at a certain interval (see JP-A 2002-177859).
Secondly, there is proposed and practiced a measure in which a suction space is provided in a gap between the bottom of a liquid reservoir and a roller so as to reduce entering of air cells from the gap (see JP-A 2003-53228).
However, these conventional measures suffer from the following problems.
In fact, the first and second measures are effective in removing air cells residing in the bottom of the liquid reservoir and in preventing the air cells from rolled together by the roller. However, these is still a problem that occurrence of air cells in an adhesive is inevitable because air is rolled together from the liquid surface of the liquid reservoir that is open to air with rotation of the upper roller.
In the conventional measures, when an adhesive having a viscosity ranging from 0.1 to 100 Pa·s is used, in particular, it is difficult to remove air cells occurring in the adhesive due to air involved from the liquid surface side, from the side of the bottom of the liquid reservoir.
Therefore, when an air cell occurring in the adhesive due to rotation of a roller is such a large cell that has a diameter ranging from several hundreds micrometers to several millimeters, a through hole occurs in an adhesive layer of a formed adhesive tape, leading deterioration in appearance and quality.

Method and apparatus for producing adhesive tape, and adhesive tape


A system for measuring the doping levels of a doped region in a semiconductor substrate, wherein an analyzer beam and a reference beam are generated, the analyzer and reference beams being substantially parallel and spaced apart from each other so that the analyzer and reference beams are non-overlapping. The analyzer beam is focused on a preselected doped region of the substrate and the reference beam is focused on an undoped region of the substrate, the doped region generating a phase shift of the analyzer beam relative to the reference beam corresponding to a level of doping of the doped region of the substrate. A detector detects the phase shift of the analyzer beam relative to the reference beam, and the doping level of the substrate in the preselected doped region is determined from the phase shift. The doping level measuring system may be used to control a semiconductor fabrication process.

This invention relates generally to a system and method for measuring the doping levels and doping profiles of a semiconductor substrate, and in particular to a system and method for measuring the doping level or doping profile of a semiconductor substrate in a semiconductor fabrication line environment.
In the fabrication of electrical active or passive devices on a semiconductor substrate, one of the most critical processes is a doping process in which impurity atoms, such as boron, phosphorus, or arsenic, are imbedded into the semiconductor substrate using various methods, such as ion implantation or diffusion. These impurities are imbedded within the semiconductor substrate, and the area is known as a doped region, and the doped region has a certain doping profile. The doping profile is the doping levels of the doped region at various points in the area of the doped region. The impurities within the semiconductor substrate determine the semiconductor substrate's conductivity, which is how well charge carriers move through a substrate. The careful control of this doping profile is critical in order to obtain an active or passive device, such as transistors, diodes, resistors, or capacitors, on the semiconductor substrate with desired electrical properties.
As indicated above, there are two conventional methods for forming a doped region in a semiconductor substrate. These methods form doped regions with profiles that may differ. In the ion implantation method, impurity atoms are accelerated, strike the surface of the semiconductor substrate, and penetrate the surface where the impurity atoms collide with the substrate lattice and stop. The substrate is then annealed (i.e, heated to high temperatures on the order of 1000.degree. C.). The doping profile for an ion implantation method is gaussian in shape (i.e., a curve with a peak near the surface of the substrate). In the diffusion method, the substrate is heated to a high temperature in a chamber that also contains a gas that has impurity atoms suspended in the gas. The impurity atoms in the gas diffuse into the substrate, and form a doping profile that is described by a complementary error function, which is well known function. The doping region may also be generated by a combination of methods where, for example, the substrate surface may be heavily doped with impurity atoms at low energy levels, and then the impurity atoms are diffused into the substrate by heating the substrate.
It is desirable to be able to accurately measure the doping profile of a device, whether it is active or passive, formed on the semiconductor substrate. It is also desirable to measure doping profiles of a semiconductor substrate during fabrication of the substrate to permit real-time control of a fabrication line and to vary the fabrication process. There are a number of conventional methods for determining the doping profile. One is a spreading resistance method in which probes are placed on the surface of the substrate, and the voltage drop across the probes is measured in response to an applied current. This method for measuring the doping profile requires too much area of the substrate surface so that is cannot be used with production substrates and cannot be used for real time control of a fabrication line. In addition, the method requires that the probes directly contact the substrate surface, which is undesirable.
Another method of measuring the doping profile of the semiconductor substrate is known as capacitance-voltage (C-V) profiling in which a junction is formed at the substrate surface, biased with a voltage, and a measurement of the capacitance of the junction as a function of the voltage applied across the junction permits the doping profile to be measured. This method also requires that probes are connected to the substrate and has the same drawbacks as the spreading resistance probe method.
The doping profile may also be measured indirectly by a method, known as Thermaprobe, in which the substrate is heated by a laser beam, and the response of the substrate to the heating is measured. This method is normally used after ion implantation, but only measures the damage caused to the substrate by the ion implantation, not the doping profile of the substrate. This method also is used prior to annealing to make the impurity atoms electrically active. Some other conventional methods include Hall effect measurements, Fourier transform infrared determination, secondary ion mass spectrometry, and plasma resonance.
None of these conventional methods of measuring the doping profile of the semiconductor substrate can be used as process monitors for real-time control in a fabrication line to measure the doping profiles of semiconductor substrate devices as they are being manufactured. The conventional methods are difficult to use and many require as area of the substrate that is so large as to preclude use of the method on production substrates in a fabrication process. They also have a limited range of resolutions that cannot measure the doping levels of the smaller semiconductor devices that are being manufactured, and may require direct contact with the surface of the substrate. Thus, these systems cannot be used as process monitors for real-time control of a fabrication line.
Therefore, there is a need for a system and method for real-time monitoring and measurement of doping profiles of doped regions in a semiconductor substrate to control the fabrication process which avoid these and other problems of known systems and methods, and it is to this end that the invention is directed.

System and method for measuring the doping level and doping profile of a region in a semiconductor substrate


A chemical munition hydrolysate treatment system pretreats agent hydrolysate with irradiation in the presence of an oxidant and processes the pre-treated chemical agent and energetic materials through a series of treatment processes until a preselected level of destruction is achieved. The treatment process includes a biological treatment of the aqueous wastestreams and catalytic oxidation of the air exhaust streams.

1. Field of the Invention
This invention relates to a process and a system for destruction of hydrolysates, and particularly aqueous hydrolysates generated from the demilitarization of chemical munitions.
2. Description of the Prior Art
The destruction of chemical munitions is a major international concern. International treaties now outlaw these weapons, and their safe disposal has been mandated.
Disposal of chemical weapons is conventionally effected by means of incineration. Although incineration represents a technically feasible approach to the destruction of these materials, it is not only unacceptable to many state and local governments, but it is also unacceptable to many of the communities surrounding the stockpile sites. One of the major concerns of these groups is the perceived hazards to the environment associated with emissions from incinerators. There is a great desire on the part of all the stakeholders of the chemical munitions demilitarization process to find effective, safe and cost efficient alternative technologies for the destruction of these weapons.
Neutralization of the chemical agent and the energetic components of chemical munitions by hydrolysis in a strong base solution is an accepted alternative technology to incineration, but the treatment of the resulting hydrolysate is problematic because the hydrolysis products could be used to reform the chemical agent and thus must be further treated. Biological treatment processes are known to be able to successfully treat energetic hydrolysates as well as hydrolysates of mustard agent (H) but biological treatment of nerve agent (VX and GB) hydrolysates has proven difficult due to the low biodegradability of the carbon-phosphorous bond of the alkyl phosphonate component of these hydrolysates. For this reason, biological treatment of nerve agent hydrolysates in combination with energetic hydrolysates is not generally accepted as practicable. See Alternative Technologies for the Destruction of Chemical Agents and Munitions, NRC, which is incorporated in its entirety by reference, at p.126-136.
The present invention provides systems and methods that use a unique combination of oxidation, preferably UV/oxidation, followed by organic removal, preferably by biological treatment, to process chemical and energetic hydrolysates to achieve results that heretofore have not been attainable. The preferred processes comprise: (1) oxidizing a chemical hydrolysate, and preferably a hydrolysate comprising alkyl phosphonate, to produce a treated chemical hydrolysate containing organic compounds; (2) optionally combining the treated chemical agent hydrolysate with an energetics hydrolysate; and (3) removing at least a portion of the organic compounds contained in said treated hydrolysate by exposing said treated hydrolysate to biodegradation. The oxidizing step preferably comprises irradiating the chemical hydrolysate, preferably with ultraviolet (UV) radiation in the presence of an oxidant.
The present inventor has found that processes according to this invention are capable of achieving surprisingly and unexpectedly superior results when compared to the processes of the prior art. For example, the methods of the present invention are capable of removing alkyl phosphonates, a component found in many chemical agent hydrolysates, at a 90% or greater efficiency.