An improved winding base structure of a transformer is assembled by combining a primary-side winding base and a secondary-side winding base. The selection of the material of the primary-side winding base and the secondary-side winding base is dependant on the compression-resistant capability because the primary-side input and the secondary-side output of the transformer bear different voltages. The outside of the assembled winding base is disposed with grooves in which the wires are wound, and the center of the winding base is disposed with a through hole for an iron core to be put therein to form a transformer. The sectional winding base of the subject application is characterized in that the primary-side winding base is made of lower compression-resistant material and the secondary-side winding base is made of higher compression-resistant material. Therefore the production cost of the winding base is reduced.

1. Field of the Invention
The present invention relates to an improved winding base structure of a transformer and more particularly to a desired sectional winding base that is made of two parts of low or high compression-resistant material to reduce the production cost.
2. Description of the Prior Art
FIGS. 1 and 2 are side-view diagrams of the winding base structures of the conventional transformer. The winding base structures 1 and 2 are used to illustrate different types of transformers and are made in a one-piece manner. The outside of the conventional transformer is disposed with a plurality of grooves 111, 121, 211 and 221 such that the winding base structures 1 and 2 are divided into a primary-side input 11, 21 and a secondary-side output 12, 22. Nonetheless, the primary-side input 11, 21 and the secondary-side output 12, 22 of the conventional transformer bear different voltages. Because the winding base structures 1 and 2 are made in a one-piece manner, the manufacturers use a higher compression-resistant material to make both the primary-side input 11, 21 and the secondary-side output 12, 22 so that the secondary-side output 12, 22 of the winding base can bear the higher voltage. Although the winding base structures 1 and 2 can bear higher voltage, however, the cost of the material is relatively increased and therefore troubles the manufacturer.
In view of the above, the conventional products are not well designed and still have lots of defects.
The inventor is aware of the defects in the conventional products and concentrates his attention in improving the products by long-term research and practice so that the subject improved winding base structure of a transformer is finally accomplished.


Instead of performing a complete frequency scan and a subsequent cell scan on detected candidate frequencies, according to the method for searching for a PLMN as disclosed herein, the frequency scan is interrupted for performing an immediate cell scan based on inspection results for a specific candidate frequency obtained during the frequency scan. During the cell scan, the bandwidth among other parameters of the cell may be detected. Based on the detected bandwidth, certain candidate frequencies falling into the detected bandwidth can be skipped when resuming the frequency scan.

PLMN search is an important feature for a mobile device in a mobile communication system since it directly impacts the user experience when a user powers up the mobile device to find a network or has to do a network scan. Therefore, the faster and more accurate a PLMN search can finish, the better will be the user experience.
Normal PLMN search consists of two consecutive steps, frequency scan and cell scan. Frequency scan is carried out first for all candidate frequencies, for example in an LTE system for E-UTRA Absolute Radio Frequency Channel Numbers (EARFCNs), to identify frequencies, which most likely contain a cell. After a complete frequency scan, a cell scan is carried out for each detected frequency, in an LTE system for each detected EARFCN, to check whether there are cells there or not.
There are two drawbacks with the above PLMN search method. First of all, the time spent on the frequency scan can be quite long when the number of candidate frequencies is large. For example, in an LTE system totally 692 EARFCNs are specified. Secondly, the system parameters used during frequency scan are normally biased towards a worst case scenario at sacrifice of some performance metrics. For example, with respect to a frequency offset, in the absence of any a priori knowledge of the frequency offset as is the case when the mobile device powers up, a worst case scenario would mean a large frequency offset is assumed to exist throughout the entire frequency scan stage. Therefore, the frequency scan method has to be robust against large frequency offsets, potentially at the cost of sensitivity.

Method and related mobile device for searching for a mobile network


A radar system is shown to include a transmitter for transmitting a pulsed electromagnetic signal having a frequency less than 500 Hz and a receiver for receiving a (scattered) reflected signal provided from the pulsed electromagnetic signal (scattered) reflected from an anomaly below the surface of the water. The radar system further includes a switch for inhibiting the receiver from receiving a reflected signal provided from the pulsed electromagnetic signal reflected from the surface of the water and a signal processor for controlling interoperability of the transmitter, the receiver and the switch. With such an arrangement, a radar system is provided for detecting anomalies such as a wake of a moving vessel (if and when this produces a conductivity anomaly), or a plume of oil beneath the surface of water.

This invention relates to radar systems and more particularly to a radar system and components therefore for transmitting an electromagnetic signal from above the surface of water to below the surface of water to detect anomalies below the surface of water.
As is known in the art, it is often desirable to detect the present of objects under the surface of water. Typically, conventional underwater detection systems operate on acoustic principles. That is, acoustic energy is transmitted in the water medium and echo return signals are received and processed to determine the presence of objects. However, acoustic signal propagation requires a transmitting transducer and a receiving transducer be disposed in the water medium. If an underwater detection system is utilized from an aircraft (i.e. airplane, helicopter, etc.), then the transmitting transducer and the receiving transducer must be suspended from a cable or a towline attached to the aircraft with the transmitting transducer and the receiving transducer disposed below the water's surface. Unfortunately, such an arrangement reduces the mobility of the aircraft and the rate of searching capability of the system. Thus, it is desirable to not require transducers disposed in the water for an underwater detection system utilized from an aircraft.
An alternative technique for detecting objects is utilizing a radar system transmitting electromagnetic signals. Electromagnetic signals propagate effectively in air and couple suitably to sea water. Unfortunately, electromagnetic signals do not propagate well in a water medium wherein the signals are subjected to a high rate of attenuation. In sea water, an electromagnetic signal is typically attenuated 8.68 dB per skin depth. Skin depth is frequency dependent and typically with a frequency of 1 Hz, the skin depth is 252 meters, with a frequency of 100 Hz, the skin depth is 25.2 meters and with a frequency of 10 KHz, the skin depth is only 2.52 meters. If a signal having a frequency of 100 Hz is propagating through sea water a distance of 1,000 meters, then the signal would have travelled a distance of approximately 40 skin depths which equals 347 dB of attenuation. From the latter, it should be appreciated that it is desirable to use relatively low frequency electromagnetic signals if the signal is required to penetrate the surface of the water a significant amount of distance.
An electric antenna for transmitting an electromagnetic signal is typically a multiple of an one-half wavelength or variant thereof such that the electromagnetic signal is resonant with the antenna. At frequencies approaching 100 Hz, a signal has a wavelength in air so long that an electric antenna is not practical for use in an aircraft. An alternative antenna for a signal with a frequency of 100 Hz, is a magnetic dipole antenna for transmitting the electromagnetic signal. One such antenna is described in a publication entitled "Air/Undersea Communication at Ultra-Low-Frequencies Using Airborne Loop Antennas" by A. C. Fraser-Smith, D. M. Bubenik and O. G. Villard, Jr. wherein a loop antenna is described for use in an airplane. However, such an antenna is large and spanned the entire aircraft. Also the antenna had a large inductance, which may not be a problem in some instances, but is typically not desirable.

Radar system and components therefore for transmitting an electromagnetic signal underwater


A retainer and seal gasket is disclosed for a thermally insulated cabinet having a door. The configuration reduces the gap between the door and cabinet, and eliminates exposure of metal components to the cabinet interior. The retainer clamps the shell and liner of the container together without requiring separate mechanical fasteners. The retainer clips onto the shell and liner of the cabinet. The retainer further has a fastening means for securing the retainer and the seal gasket in an interlocking relationship. The retainer may include at least one anchoring rib for affixing the retainer within insulation inserted between the shell and liner of the container. The seal gasket provides a flexible bumper and a magnetic seal for releasably closing the door of the cabinet.

The present invention relates to refrigerators, freezers and other thermally insulated containers, provided with one or more doors adapted to close and access opening of the container. In particular, the present invention relates to a retainer and seal gasket for use in assembling the shell and liner portions of the container without separate mechanical fasteners, such as screws or rivets.
A refrigerator is generally a cabinet constructed of a metal outer shell, an injection molded or vacuum formed plastic liner, insulation, and a means for assembling and fastening these elements. This fastening means is generally a metal clip, which provides a conductive heat transfer path from the exterior to the interior of the cabinet, resulting in energy loss. The refrigerator door typically has an elastic magnetic seal gasket for releasably closing the container. Numerous techniques and devices for assembling the components of a refrigerator are known in the art. These techniques generally involve multiple pieces as well as separate mechanical fasteners. The use of these separate fasteners often requires numerous holes to be drilled. As a result, assembly of the refrigerator is a complicated, multiple-step operation, and results in low repeatability, high cost, and flaws in manufacture.
Although these conventional methods of attaching the refrigerator and door components have been acceptable in the art thus far, it is desirable to provide a simple retainer and gasket to fasten the shell and liner portions of the refrigerator.


A floating collar is metal injected moulded with an excess portion intended to be separated, such as by shearing, from the reminder of the moulded floating collar to leave a chamfer thereon and/or remove injection marks.

Gas turbine combustors are typically provided with floating collar assemblies or seals to permit relative radial or lateral motion between the combustor and the fuel nozzle while minimizing leakage therebetween. Machined floating collars are expensive to manufacture at least partly due to the need for an anti-rotating tang or the like to prevent rotation of the collar about the fuel nozzle tip. This anti-rotation feature usually prevents the part from being simply turned requiring relatively expensive milling operations and results in relatively large amount of scrap material during machining.
There is thus a need for further improvements in the manufacture of fuel nozzle floating collars.

This patent is subject to a terminal disclaimer.

Method for manufacturing of fuel nozzle floating collar


The present disclosure describes a tire management system for a vehicle. The tire management system includes a first load sensor that determines a first load placed on a first tire of the vehicle, a first pressure sensor that determines a first fluid pressure within the first tire, a control unit communicatively coupled to the first load sensor and to the first pressure sensor. The control unit generates a first fluid pressure adjustment instruction based at least in part on the first load determined by the first load sensor and the first fluid pressure determined by the first pressure sensor. Additionally, the tire management system includes a first valve fluidly coupled to the first tire and communicatively coupled to the control unit, in which the first valve adjusts the first fluid pressure within the first tire based at least in part on the first fluid pressure adjustment instruction.

The present disclosure generally relates to managing tire pressure for vehicles, and more particularly, to determining and adjusting tire pressure in the vehicles.
Generally, vehicles, such as an off-road work vehicle provides versatility by being able to perform a multitude of tasks. To help illustrate, an off-road tractor may pull a planter implement to plant seeds in a field. Additionally, a loader attachment may be attached to the off-road tractor to lift bales of hay. However, the various tasks a single off-road work vehicle performs may place different load profiles (e.g., forces or weights) on the vehicle. Continuing with the two examples above, using the off-road tractor to pull an implement may place a higher load on the rear wheels and a lower load on the front wheels of the tractor. On the other hand, attaching a loader to the front of the off-road tractor may place a higher load on the front wheels and a lower load on the rear wheels of the tractor.
The varying loads placed on the vehicle may affect the performance of the vehicle's tires. For example, when tire pressure is lower than desired for a particular tire load, the tire may deform along the sidewalls of the tire (e.g., radially contracting a central portion of the tire), which may decrease fuel efficiency of the off-road vehicle. On the other hand, when tire pressure is higher than desired for a particular tire load, the tire may deform along the tread of the tire (e.g., radially expanding a central portion of the tire), which may decrease traction of the vehicle.

Tire pressure control system for a vehicle


A method for data transmission between a sensor and an electronic control and/or regulating unit (ECU), the transmitted sensor data (x1, . . . , xt) and the sensor being secured against a manipulation. The system provides a particularly simple, but very secure method for manipulation protection, the sensor data (x1, . . . , xt) being transmitted via a first logical data transmission channel at a first data transmission rate, and security data (MAC; CMAC) for securing the transmitted sensor data and/or the sensor being transmitted via a second logical data transmission channel at a second data transmission rate from the sensor to the ECU. At least once at the beginning of a data transmission session, a session key is transmitted from the ECU to the sensor via a third logical data transmission channel and received by the latter, the session key being used at least for the ongoing session to generate the security data.

For example, pressure sensors for detecting the pressure prevailing in a shared fuel accumulator (so-called common rail) of a fuel injection system of a motor vehicle are known from the related art. The fuel stored under the measured pressure in the accumulator is provided for injection into combustion chambers of an internal combustion engine of the motor vehicle. Such pressure sensors are connected to an electronic control and/or regulating unit (so-called engine control unit, ECU). The pressure sensors communicate via analog communication channels with the ECU. These analog channels may be manipulated relatively easily, whereby it is possible for unauthorized persons to achieve a performance enhancement of the internal combustion engine (so-called tuning). This performance enhancement is advantageous for the driver of a motor vehicle provided with the performance-enhanced internal combustion engine and generally desired thereby.
However, such tuning is not recognizable and not comprehensible for the vehicle manufacturer. This has the disadvantage that the vehicle manufacturer in the past was made liable for any problems which resulted from the impermissible performance enhancement and had to repair defects of the internal combustion engine, although these were sometimes to be attributed to the impermissible performance enhancement. For some time, many of the analog communication channels between sensors and the ECU have been replaced by digital data buses. A variety of possibilities is known from the related art for recognizing a manipulation of the sensor data digitally transmitted from the sensor to the ECU and/or of the sensor itself or to secure the sensor data and/or the sensor against a manipulation.
A corresponding method for recognizing a manipulation of transmitted sensor data and/or a sensor itself is discussed, for example, in DE 10 2009 002 396 A1. Many of the methods may have the disadvantage that they are relatively costly and complex. They place relatively high demands on the software and the hardware which are necessary to implement the manipulation recognition according to the known methods. Thus, for example, it is necessary in the case of the method known from the cited publication that two keys for generating and verifying authentication codes (so-called message authentication codes, MACs) for the data transmitted between the sensor and the ECU must be stored both in the sensor and in the ECU. This requires additional storage space both in the sensor and in the ECU, storage space being scarce and costly in the sensor in particular. In addition, the computer program for implementing the manipulation protection is relatively complex, and computing-intensive and storage-intensive as a result of the complexity of the method. In addition, substantial computing power is necessary to be able to process the complex computer program within acceptable processing times in the sensor or in the ECU.

Method for recognizing a manipulation of a sensor and/or sensor data of the sensor


A method of controlling a laser unit in order to negate heat build-up caused by a laser modulation current, and eliminating artifacts caused by image related thermal effects. Upon receipt of an activation signal, an activation current is applied which causes lasing of the laser unit. Upon receipt of a deactivation signal, the method ceases lasing by selectively applying either an idle current below the activation current, or a cooling current below the idle current.

Laser Scanning Units (LSU) employed in printing systems directly scan a laser over a negatively charged cylinder called a "drum" to define differentially charged areas representing text or images. In some examples, a belt, or other configurations are used in place of or in addition to the drum. Electrically charged printing fluid, for example liquid ink or powdered ink (toner), is then selectively applied to the drum and transferred to the print medium. The intensity of the laser, which affects the size and amount of toner transferred to the drum, is controlled by modulating the current provided to the laser diode in a laser unit.
The modulation current causes temperature fluctuations in the laser diode. Whilst laser units often include temperature stabilization systems comprising temperature sensors and thermoelectric coolers, the temperature control is generally significantly slower than the modulation data dependant heat changes.


Embodiments are generally directed to systems and apparatuses for tracking usage of an item. For example, an apparatus may be provided for tracking use of a packetized item. The apparatus may include a microprocessor, a power source, and a structural layer to which the microprocessor and power source are coupled. The structural layer may include a container that is configured to hold various items. The container may also include an opening that allows access to the items. The apparatus may further include a cover layer that is configured to cover the opening of the container. The cover layer may include at least one bendable sensor placed over the opening of the container. The microprocessor may be configured to determine, using detected movements in the bendable sensor, whether the container has been opened.

Many items that are produced are never opened. And many items that are produced for a certain individual are opened by the wrong individual. Still further, there is no way to track usage of a wide variety of products that are purchased and sold throughout the country. Providers of these goods may wish to know whether their goods end up being used and, if so, how they are used. This is especially true for pharmaceutical manufacturers, and producers of medical supplies and devices. Currently, there is no reliable mechanism for tracking such use.


An air sampler having a fan; an air inlet tube; a main body having a cyclonic cup, a stripping column and a demister; and fluidic circuitry for inputting fluids to the main body and the air inlet tube, and for outputting fluids from the main body. Air flow through the air sampler may be generated by a fan that is either external or internal with respect to the main body's cyclonic cup. A thin film of stripping liquid and/or a fog of stripping liquid particles in the air inlet tube, the cyclonic cup, the stripping column and/or the demister strip a target material from the air flow through the air sampler. A passive fog generating slot or a passive spiral fog generating nozzle may be placed over the fluid input conduit in the center of the cyclonic cup. The air sampler's main body and/or an air inlet tube may be integrally formed as one part. The main body's inner surfaces may be selected to be hydrophilic, for better flow of the thin film of stripping liquid across them; and its intersecting internal surfaces may be provided with smoothly curved fillets for better air and liquid flow over them. The air sampler may be provided with a liquid level control that may have a reservoir float monitored by external optical sensors; a flexible, capacitive effect, dual electrode bearing substrate that is wrapped around the exterior of the air sampler's stripping column; or an external optical bubble sensor for the reservoir's output conduit. The air sampler may be so small, light and low in energy consumption that it may be battery powered and human-portable; and may be so efficient that it may be used to strip target material that is present in the incoming air in concentrations of only a few parts per trillion, or less.

The present invention relates to air samplers. More particularly, it relates to air samplers that strip a target material from the ambient air (the air mass being sampled), and concentrate it in a stripping liquid. The stripping liquid may then be delivered to any suitable detection apparatus for the target material.


Techniques for multiple message retrieval for secure electronic communication are described. The techniques, for instance, utilize a server and computing devices employing a private information retrieval scheme to allow a receiving device to locate multiple electronic communications on a server, request delivery of the multiple electronic communications without the server being aware of which electronic communication are requested, and receive the electronic communications without the server being aware of which electronic communications were sent. For example, the server may utilize an efficient electronic communication storage structure for storing and retrieving multiple electronic communications.

Keeping communication private has become increasing important in an era of mass surveillance and cyberattacks. For example, government officials and business leaders travel to hostile locations and rely on local, untrusted infrastructure to communicate using mobile devices and computers. Additionally, even in friendly locations, servers and internet service providers may be untrusted. Many people are also concerned that communication is being monitored by private parties and government agencies. Not only are people concerned with content of communication being discovered, but metadata surrounding the communication as well. Metadata may contain information about the communication including identities of parties that sent and received the communication, a time of the communication, and a frequency of the communication. Although communication may be encrypted to protect content of the communication, maintaining privacy of associated metadata is an increasingly important challenge.
Conventional methods attempting to protect metadata of communication are either insufficiently secure or limited by network and other computing costs. When a user attempts to receive a high volume of communication through a sophisticated secure communication system, the user may be compelled to bear high network or other computing costs and/or delay receiving communications because of the high network or other computing costs.

Multiple message retrieval for secure electronic communication


Apparatus for tracking an object includes a plurality of field generators, which generate electromagnetic fields at different, respective frequencies in a vicinity of the object, and a radio frequency (RF) driver, which radiates a RF driving field toward the object. A wireless transponder is fixed to the object. The transponder includes at least one sensor coil, in which a signal current flows responsive to the electromagnetic fields, and a power coil, which receives the RF driving field and conveys electrical energy from the driving field to power the transponder. The power coil also transmits an output signal responsive to the signal current to a signal receiver, which processes the signal to determine coordinates of the object.

Many surgical, diagnostic, therapeutic and prophylactic medical procedures require the placement of objects such as sensors, treatment units, tubes, catheters, implants and other devices within the body. These procedures cover a large spectrum including, for example:                insertion of electrodes for therapeutic or diagnostic purposes,        placement of tubes to facilitate the infusion of drugs, nutritional and other fluids into a patient's circulatory system or digestive system,        insertion of probes or surgical devices to facilitate cardiac or other types of surgery, and        biopsies or other diagnostic procedures.
In many instances, insertion of a device is for a limited time, such as during surgery or catheterization. In other cases, devices such as feeding tubes or orthopedic implants are inserted for long-term use. The need exists for providing real-time information for accurately determining the location and orientation of objects within the patient's body, preferably without using X-ray imaging.
U.S. Pat. Nos. 5,391,199 and 5,443,489 to Ben-Haim, whose disclosures are incorporated herein by reference, describe systems wherein the coordinates of an intrabody probe are determined using one or more field sensors, such as a Hall effect device, coils, or other antennae carried on the probe. Such systems are used for generating three-dimensional location information regarding a medical probe or catheter. Preferably, a sensor coil is placed in the catheter and generates signals in response to externally-applied magnetic fields. The magnetic fields are generated by three radiator coils, fixed to an external reference frame in known, mutually spaced locations. The amplitudes of the signals generated in response to each of the radiator coil fields are detected and used to compute the location of the sensor coil. Each radiator coil is preferably driven by driver circuitry to generate a field at a known frequency, distinct from that of other radiator coils, so that the signals generated by the sensor coil may be separated by frequency into components corresponding to the different radiator coils.
U.S. Pat. No. 6,198,963 to Ben-Haim et al., whose disclosure is incorporated herein by reference, describes simplified apparatus for confirmation of intrabody tube location that can be operated by nonprofessionals. The initial location of the object is determined as a reference point, and subsequent measurements are made to determine whether the object has remained in its initial position. Measurements are based upon one or more signals transmitted to and/or from a sensor fixed to the body of the object whose location is being determined. The signal could be ultrasound waves, ultraviolet waves, radio frequency (RF) waves, or static or rotating electromagnetic fields.
PCT Patent Publication WO 96/05768 to Ben-Haim et al., whose disclosure is incorporated herein by reference, describes a system that generates six-dimensional position and orientation information regarding the tip of a catheter. This system uses a plurality of sensor coils adjacent to a locatable site in the catheter, for example near its distal end, and a plurality of radiator coils fixed in an external reference frame. These coils generate signals in response to magnetic fields generated by the radiator coils, which signals allow for the computation of six location and orientation coordinates.
U.S. Pat. No. 6,239,724 to Doron et al., whose disclosure is incorporated herein by reference, describes a telemetry system for providing spatial positioning information from within a patient's body. The system includes an implantable telemetry unit having (a) a first transducer, for converting a power signal received from outside the body into electrical power for powering the telemetry unit; (b) a second transducer, for receiving a positioning field signal that is received from outside the body; and (c) a third transducer, for transmitting a locating signal to a site outside the body, in response to the positioning field signal.
U.S. Pat. No. 6,172,499 to Ashe, whose disclosure is incorporated herein by reference, describes a device for measuring the location and orientation in the six degrees of freedom of a receiving antenna with respect to a transmitting antenna utilizing multiple-frequency AC magnetic signals. The transmitting component consists of two or more transmitting antennae of known location and orientation relative to one another. The transmitting antennae are driven simultaneously by AC excitation, with each antenna occupying one or more unique positions in the frequency spectrum. The receiving antennae measure the transmitted AC magnetic field plus distortions caused by conductive metals. A computer then extracts the distortion component and removes it from the received signals, providing the correct position and orientation output.
U.S. Pat. No. 4,173,228 to Van Steenwyck et al., whose disclosure is incorporated herein by reference, describes a catheter locating device based upon inducing a signal in a coil attached to the catheter and monitoring the amplitude and phase of the induced signal.
U.S. Pat. No. 5,099,845 to Besz et al., and U.S. Pat. No. 5,325,873 to Hirschi et al., whose disclosures are incorporated herein by reference, describe apparatus and methods in which a radiating element is fixed to a medical tube, e.g., a catheter, and the position of the tube is determined responsive to energy radiated from the element.
U.S. Pat. No. 5,425,382 to Golden, et al., whose disclosure is incorporated herein by reference, describes apparatus and methods for locating a medical tube in the body of a patient by sensing the static magnetic field strength gradient generated by a magnet fixed to the medical tube.
U.S. Pat. No. 4,905,698 to Strohl et al. and U.S. Pat. No. 5,425,367 to Shapiro, et al., whose disclosures are incorporated herein by reference, describe apparatus and methods wherein an applied magnetic field induces currents within a coil at the tip of a catheter. Based on these currents, the relative location of the catheter is determined.
U.S. Pat. No. 5,558,091 to Acker et al., whose disclosure is incorporated herein by reference, describes a magnetic position and orientation determining system which uses uniform fields from Helmholtz coils positioned on opposite sides of a sensing volume and gradient fields generated by the same coils. By monitoring field components detected at a probe during application of these fields, the position and orientation of the probe is deduced. A representation of the probe is superposed on a separately-acquired image of the subject to show the position and orientation of the probe with respect to the subject.
U.S. Pat. No. 5,913,820 to Bladen et al., whose disclosure is incorporated herein by reference, describes apparatus for locating the position of a sensor, preferably in three dimensions, by generating magnetic fields which are detected at the sensor. The magnetic fields are generated from a plurality of locations and enable both the orientation and location of a single coil sensor to be determined.
Commercial electrophysiological and physical mapping systems based on detecting the position of a probe inside the body are presently available. Among them, CARTO™, developed and marketed by Biosense Webster Inc., Diamond Bar, Calif., is a system for automatic association and mapping of local electrical activity with catheter location.
An article entitled, "Microtool Opens 3D Window into the Human Body," by Cleopatra Alfenito, Medical Imaging 12(11) (November, 1997), which is incorporated herein by reference, describes the "miniBIRD" device, made by Ascension Technology (Burlington, Vt.). This device " . . . measures internal organs and their motion by reconstructing the position and orientation of 2D slices to fill a 3D volume . . . Sensors—as small as 5 mm—can be attached to probes, instruments, or even a fetal head inside the human body. These mini-trackers measure the spatial location of ultrasound probes or other instruments with six degrees of freedom (position and orientation as given by x,y,z, yaw, pitch and roll) in real time. The miniBIRD works by measuring magnetic fields and converting signals to real-time 3D measurements. At the start of each measurement cycle (of which there are up to 144 per second), the system's triaxial transmitter is driven by a pulsed DC signal. The sensor then measures the transmitted magnetic field pulse. The electronics unit controls the transmitting and receiving elements and converts the received signals into real-time position and orientation measurements, providing for the collection of accurate data. This data can then be used for 3D reconstruction of internal images of the heart, blood vessels, stomach, pelvis and other areas as provided by ultrasound or an endoscope."


A trench gate MOS structure is provided on one main surface of a semiconductor substrate which will be an n− drift region. An n shell region is provided in the n− drift region so that it contacts a surface of a p base region close to the n− drift region forming the trench gate MOS structure. The n shell region has a higher impurity concentration than the n− drift region. The effective dose of n-type impurities in the n shell region is equal to or less than 5.0×1012 cm−2. The n− drift region has a resistivity to prevent a depletion layer, which is spread from a p collector region on the other main surface when reverse rated voltage is applied with an emitter as positive electrode, from reaching either n shell region or the bottom of a first trench, whichever is closer to the p collector region.

A. Field of the Invention
The present invention relates to semiconductor devices including a reverse blocking semiconductor device and a bidirectional semiconductor device, and more particularly, to trench gate semiconductor devices.
B. Description of the Related Art
In recent years, in a power conversion circuit which performs, for example, AC (alternating current)/AC conversion, AC/DC (direct current) conversion, or DC/AC conversion using a semiconductor element, a matrix converter has been known as a direct conversion circuit which can be configured without using a DC smoothing circuit including, for example, an electrolytic capacitor or a DC reactor. Since the matrix converter is used at an AC voltage, a plurality of switching devices forming the matrix converter need to be bidirectional switching devices with bidirectionality which can control a current in the forward direction and the reverse direction. As this type of bidirectional switching device, a bidirectional switching device has been used which is formed by connecting two devices, each of which includes a diode for a reverse breakdown voltage that is connected in series to a general insulated gate bipolar transistor (hereinafter, referred to as an IGBT) in inverse and can control a current in two directions.
In recent years, a reverse blocking IGBT (RB-IGBT) has been used as the above-mentioned bidirectional switching device in order to reduce the size and weight of a circuit, to increase the efficiency and response of the circuit, and to reduce manufacturing costs. The reason is that, when two reverse blocking IGBTs are connected inversely in parallel, it is possible to form the bidirectional switching device, without using the diode for a reverse breakdown voltage. A bidirectional IGBT has the bidirectional switching device, which is formed by connecting two reverse blocking IGBTs in inverse parallel, as a power chip. Next, the structure of the reverse blocking IGBT according to the related art will be described.
FIG. 15 is a cross-sectional view schematically illustrating the structure of the reverse blocking IGBT according to the related art. In the reverse blocking IGBT, in general, an active region 110 is provided at the center and a separation portion 130 is provided in the outer circumference of the active region 110 through an edge termination structure region 120. The separation portion 130 includes a p-type isolation region 31. The active region 110 is the path of a main current of a vertical IGBT including, for example, an n− drift region 1, a p base region 2, an n+ emitter region 3, an emitter electrode 9, a p collector region 10, and a collector electrode 11. The isolation region 31 is a p-type region which is formed so as to extend from the front surface of a semiconductor substrate to the p collector region 10 provided on the rear surface side. The structure of the active region 110 will be described in detail with reference to FIG. 16.
FIG. 16 is a cross-sectional view illustrating the detailed structure of the active region in the reverse blocking IGBT according to the related art illustrated in FIG. 15. The n− drift region 1 is a silicon substrate produced by a floating zone (FZ) method (hereinafter, referred to as an FZ silicon substrate). In the IGBT using the FZ silicon substrate, a high-concentration semiconductor substrate is not used, unlike in an IGBT using an epitaxial silicon substrate according to the related art. Therefore, for example, the thickness of the silicon substrate can be reduced to about 100 μm when the rated voltage of the IGBT is 600 V and can be reduced to about 180 μm when the rated voltage of the IGBT is 1200 V.
The p base region 2 is selectively provided in a surface layer of the front surface of the FZ silicon substrate which will be the n− drift region 1. The n+ emitter region 3 and the p body region 4 are selectively provided in a surface layer of the p base region 2 which is close to the front surface of the substrate. A gate electrode 7 which is made of polysilicon is provided on the surface of a portion of the p base region 2 which is interposed between the n+ emitter region 3 and the n− drift region 1, with a gate insulating film 6 interposed therebetween. The emitter electrode 9 comes into ohmic contact with both the surface of the n+ emitter region 3 and the surface of the p+ body region 4. The interlayer insulating film 8 is provided between the gate electrode 7 and the emitter electrode 9 and electrically insulates the gate electrode 7 from the emitter electrode 9.
The p collector region 10 and the collector electrode 11 which comes into ohmic contact with the p collector region 10 are provided on the rear surface side of the FZ silicon substrate which will be the n− drift region 1. When the rear surface structure of the FZ silicon substrate is formed in this way, the thickness of the p collector region 10 is reduced and the p collector region 10 is controlled to the required low impurity concentration. Therefore, it is possible to reduce the injection efficiency of a minority carrier from the p collector region 10 and to improve transport efficiency. As a result, in the reverse blocking IGBT having the above-mentioned structure, the trade-off relationship between on-voltage characteristics and turn-off loss is improved and it is possible to reduce both the on-voltage and the turn-off loss.
As this type of reverse blocking IGBT, a reverse blocking IGBT has been proposed in which a p base region is formed in the front surface of a semiconductor substrate, an n+ emitter region is formed in the p base region, a p+ isolation region and a p+ collector region are respectively formed in an outer circumferential portion (the side surface of the substrate) and the rear surface of the semiconductor substrate so as to surround the p base region, and the thickness of the p+ collector region in the rear surface is about 1 μm (for example, see JP 2002-319676 A).
In addition, as another reverse blocking IGBT, a high-breakdown-voltage semiconductor device has been proposed in which a single-layered semiconductor substrate has at least pn junctions for forward and reverse breakdown voltages formed on both sides thereof and the breakdown voltage junction termination structure of the two pn junctions is provided on the first main surface of the semiconductor substrate by a separating diffusion region. The single-layered semiconductor substrate includes a region in which an impurity concentration distribution is substantially constant from the first main surface toward the inside or impurity concentration is reduced from the first main surface toward the inside. Therefore, in the reverse blocking IGBT, it is possible to reduce a reverse leakage current, without reducing a reverse breakdown voltage (for example, see JP 2006-080269 A).
As a reverse blocking IGBT with improved electrical characteristics, the following device has been known. FIG. 17 is a diagram illustrating the electric field intensity distributions of the reverse blocking IGBT according to the related art when a forward voltage is applied and when a reverse voltage is applied. FIG. 17A illustrates the cross-sectional structure of a main portion of the reverse blocking IGBT according to the related art. In FIG. 17B, the y-axis indicates the thickness of the reverse blocking IGBT illustrated in FIG. 17A and the x-axis indicates the electric field intensity distributions when the forward voltage is applied and when the reverse voltage is applied. The distance of the y-axis means the distance to an emitter direction when the rear surface of the substrate (the interface between a p collector region 10 and a collector electrode 11) is 0 (zero). In the reverse blocking IGBT illustrated in FIG. 17A, buffer layers 201 and 202 which have the same conductivity type and high impurity concentration are provided at the interface between an n− drift region 1 and a p base region 2 and the interface between the n− drift region 1 and the p collector region 10, respectively. Therefore, it is possible to achieve an IGBT having a forward breakdown voltage value and a reverse breakdown voltage value which are equal to each other (for example, see JP 2002-532885 W).
As an IGBT with improved electrical characteristics, a device has been proposed in which a high-impurity-concentration region that has the same conductivity type as an n− drift region is provided at least a portion of the boundary between a p base region and the n− drift region. According to this structure a channel length is reduced and a voltage drop in an on state is reduced (for example, see JP 09-326486 A).
As another IGBT with improved electrical characteristics, the following device has been proposed. A short lifetime region is provided in a portion of an n drift region close to a p collector region. The short lifetime region is an n-type region and has a higher impurity concentration than an n base layer. According to this structure, it is possible to reduce the leakage current of a non-punch-through (NPT) IGBT (for example, see 09-260662 A).
As another IGBT with improved electrical characteristics, a device has been proposed which includes a second-conductivity-type collector region and a first-conductivity-type field stop region that is formed in a first-conductivity-type semiconductor substrate, has a higher impurity concentration than the first-conductivity-type semiconductor substrate, and is separated from the second-conductivity-type collector region (for example, see JP 2002-246597 A). In JP 2002-246597 A, even when a partial deficiency occurs in the collector region, an increase in the voltage drop characteristics in an on state or the deterioration of the breakdown voltage characteristics is suppressed.
As a bidirectional IGBT with improved electrical characteristics, the following device has been proposed. Gate electrodes are provided in trenches which are formed in two main surfaces of a semiconductor substrate through gate oxide films and trench MOS gate (an metal-oxide-semiconductor insulated gate) structures (hereinafter, referred to as trench gate MOS structures) are formed on the two main surfaces of the semiconductor substrate. A buffer layer which has the same conductivity type as a drift region and has a higher concentration than the drift layer is provided at the interface between the drift region and a base layer on the two main surface sides of the semiconductor substrate. In addition, a depletion layer which is spread to the drift region when an off-voltage is applied extends sufficiently to reach the high-concentration buffer layer. This structure is a punch-through structure. According to this structure, it is possible to improve the breakdown voltages in two directions to the same level and to remove an oscillation waveform when the device is turned off. In addition, it is possible to control the gate in two directions (for example, see JP 2001-320049 A).
As a reverse blocking IGBT with improved electrical characteristics, a device has been proposed in which a second trench groove is formed on the collector electrode side, an oxide film is coated on the surface of the second trench groove, the second trench groove is filled with polysilicon, a second n buffer region is formed in a portion interposed between the second trench grooves, and a depletion layer is spread to an n− drift region over the second n buffer region when a reverse bias is applied, thereby obtaining the reverse breakdown voltage equal to the forward breakdown voltage using a PT structure (for example, see JP 2003-318399 A).
However, in the reverse blocking IGBT disclosed in JP 2002-319676 A, the reverse breakdown voltage is likely to be lower than the forward breakdown voltage. Hereinafter the reason will be described. The planar reverse blocking IGBT requires the p+ isolation region which extends from the front surface of the semiconductor substrate to the p+ collector region on the rear surface side in order to ensure the reverse blocking capability. A drive diffusion (heat treatment) which is required to form the p+ isolation region is performed in an oxygen atmosphere at a high temperature for a long time in order to prevent the surface roughness of the n type silicon substrate. For example, the diffusion time of the heat treatment is about 100 hours at a temperature of 1300° C. in a device for a breakdown voltage of 600 V and is about 200 hours at a temperature of 1300° C. in a device for a breakdown voltage of 1200 V.
When the heat treatment is performed for the silicon substrate in the oxygen atmosphere at a high temperature for a long time, the doped oxygen atom is changed to a donor. In particular, when the silicon substrate has low impurity concentration, the oxygen concentration of the silicon substrate is increased by the influence of the change of the oxygen atom into the donor. Since oxygen concentration in the vicinity of the surface of the silicon substrate is reduced by outward diffusion, the impurity concentration distribution of the silicon substrate is low in the width (depth) range of a few micrometers to tens of micrometers from two main surfaces of the substrate in the depth direction and is high at the center of the substrate. The manufacturing processes of the reverse blocking IGBT include a process of forming a predetermined MOS gate structure and an aluminum electrode film on the front surface, a rear surface grinding process of reducing the thickness of the n drift region to a value required for a breakdown voltage while reducing the on-voltage, and a process of forming the p+ collector region and the collector electrode. The amount of grinding of the rear surface of the silicon substrate in the rear surface grinding process is very large, that is, equal to or more than half the original thickness of the silicon substrate. Therefore, as described above, the silicon substrate which is affected by the change of the oxygen atom into the donor has an impurity concentration distribution in which, after the rear surface grinding process, the impurity concentration is high on the collector side for which the rear surface grinding is performed and is obliquely reduced on the emitter side by the influence of outward diffusion in the width (depth range) of a few micrometers to tens of micrometers from the front surface of the substrate in the depth direction.
As a result, since the impurity concentration of a collector-side portion of the n drift region is higher than the impurity concentration of an emitter-side portion of the n drift region, the depletion layer which is spread from the collector junction (the pn junction between the p+ collector region and the n drift region) is less likely to be extended than the depletion layer which is spread from the p base junction (the pn junction between the p base region and the n drift region) on the emitter side of the reverse blocking IGBT. Therefore, since the electric field is likely to be increased by the application of a low voltage, the reverse breakdown voltage is lower than the forward breakdown voltage. The influence of the oxygen donor on the breakdown voltage is likely to cause problems when the resistivity of the silicon substrate is large, for example, when the breakdown voltage is equal to or higher than 600 V. For the curvature radius of the circumference of the original pn junction, the breakdown voltage obtained in the collector junction (reverse breakdown voltage junction) is likely to be higher than that in the p base junction (forward breakdown voltage junction). In the device with a breakdown voltage lower than 600 V, the reverse breakdown voltage is likely to be higher than the forward breakdown voltage even when the influence of the oxygen donor on the reverse breakdown voltage is considered.
The technique disclosed in JP 2002-532885 W or JP 09-326486 A has the following problems. For example, as represented by a dashed line in FIG. 17B, if the depletion layer which is spread from the collector junction 21 when the reverse voltage is applied (reverse bias) reaches an emitter-side buffer layer 201 (hereinafter, referred to as a shell region), it is less likely to be extended and the electric field increases rapidly. As a result, an electric field peak (critical electric field intensity) 212 appears in the vicinity of the collector junction 21. In contrast, as represented by a solid line in FIG. 17B, if the depletion layer that is spread from the p base junction 20 when the forward voltage is applied (forward bias) reaches the p collector region 10, similarly, the electric field increases rapidly and an electric field peak 211 appears in the vicinity of the interface of the p base junction 20. Therefore, both the forward breakdown voltage and the reverse breakdown voltage are likely to be reduced. That is, when the shell region 201 and the buffer region (collector-side buffer layer) 202 are provided, it is difficult to achieve the forward breakdown voltage and the reverse breakdown voltage which are obtained when these regions are not provided. As a method for solving the problem of the breakdown voltage being reduced, a method has been known which reduces the impurity concentration of the n− drift region 1 to increase the design breakdown voltage.
However, when the impurity concentration of the n− drift region 1 is reduced, the depletion layer is likely to be spread, but the punch-through phenomenon that the depletion layer reaches the buffer region 202 while the semiconductor device is operating is likely to occur. As a result, a new problem that the voltage waveform and the current waveform in a turn-off state (hereinafter, referred to as a turn-off waveform) oscillate arises. In addition, the reverse blocking IGBT has the characteristic that a large amount of current flows transiently during reverse recovery for which the reverse blocking IGBT is changed from an on state to a reverse blocking state (reverse recovery characteristic). Therefore, the problem that the voltage waveform and the current waveform during reverse recovery (hereinafter, referred to as a reverse recovery waveform) oscillate also arises. When the turn-off waveform and the reverse recovery waveform oscillate, there is a concern that noise will be generated. When the oscillation of the voltage waveform is very large, there is a concern that the semiconductor device will be damaged.
The invention has been made in order to solve the above-mentioned problems of the related art and an object of the invention is to provide a semiconductor device which can improve a reverse breakdown voltage and a forward breakdown voltage, suppress the oscillation of a voltage waveform and a current waveform when the semiconductor device is turned off, and suppress the oscillation of the voltage waveform and the current waveform during reverse recovery.
The present invention is directed to overcoming or at least reducing the effects of one or more of the problems set forth above.


A structural mount assembly for a roof panel of a vehicle. The structural mount assembly includes an exterior bracket and a plurality of interior brackets. The exterior bracket is secured to an exterior surface of the roof panel. The exterior bracket includes a plurality of stanchions for mounting a sensor structure. The plurality of interior brackets are disposed on an interior surface of the roof panel and being secured to the exterior bracket through the roof panel.

The statements in this section merely provide background information related to the present disclosure and may not constitute prior art.
Autonomous vehicles have one or more sensor structures to provide situational information to a vehicle controller. The sensor structures may be mounted to a roof of the vehicle via a bracket and/or other support members. The roof of the vehicle is typically modified to provide for the brackets and/or support members to assist in supporting the sensor structure. Such modification includes drilling holes in the roof of the vehicle, for example, which increases the time it takes to mount the sensor structure to the roof of the vehicle.
These mounting issues related to sensor structures, among other issues related to mounting sensor structures to a vehicle, are addressed by the present disclosure.

Structural mount assembly and vehicle having structural mount assembly


(−)-(S)-3-(3′-hydroxy)-butylphthalide (a compound shown by Formula I) and an ester formed of the same and an acid are proved by experiments to be applicable to treatment and prevention of cerebral ischemic diseases and have a sleep-improving function. The acid refers to a pharmaceutically acceptable inorganic or organic acid. The inorganic acid refers to nitric acid, sulfuric acid, or phosphoric acid. In addition to an acid radical, the organic acid at least comprises at least one of an amino group, a hydroxyl group, and a carboxyl group. None of the compound shown by Formula I and the ester thereof is water-soluble. An ester generated from the compound and the acid further react with an acid or a base to generate a salt which is water-soluble and is used to prepare injection preparation. The experiment proves that the salt does not stimulate vessels.

Butylphthalide has improving effects on impairment of central nervous system function in patients with acute ischemic stroke, can promote the recovery of function in patients, and is mainly converted in vivo into two metabolites, 3-3-(3′-hydroxy)butylphthalide and 3-hydroxy-3-butylphthalide:

Guangdong Zhongke Drug Research & Development Co. Ltd. and Shandong Lvye Natural Drug Research & Development Co. Ltd. synthesized a succinic acid ester, a glycine ester and a phosphoric acid ester of the Metabolite I, and illustrated the use thereof for preventing cerebral ischemic diseases in 2008. Patent application 200410036628.3 discloses a novel use of butylphthalide homologs 3-(3′-hydroxy)butylphthalide and 3-hydroxy-3-butylphthalide. Both of them are proved to have the following effects:
1) significantly improving neurologic symptoms in rats caused by cerebral ischemia due to brain trauma;
2) improving memory disorder in rats caused by cerebral ischemia;
3) relieving cerebral edema in rats caused by cerebral ischemia;
4) reducing stroke in rats caused by cerebral ischemia;
5) improving energy metabolism in rats caused by cerebral ischemia;
6) increasing cerebral blood flow in the ischemic brain region;
7) reducing the area of cerebral infarction in rats with local cerebral ischemia and relieving symptoms of neurological deficit;
8) anti-platelet aggregation and anti-thrombosis;
9) preventing and treating dementia.
Researchers in our company discover that the Metabolite I has two different optical isomers, and have prepared the compound of 3-3-(3′-hydroxy)butylphthalide (Metabolite I) in both S- and R-configurations as is shown in the following figures, by a method of asymmetric synthesis:

Furthermore, it is found by animal tests that the R-configuration cannot affect the cerebral infarct volume in rats with cerebral ischemia and improve the symptoms of cerebral ischemia, while the S-configuration has effects of improving the symptoms of cerebral ischemia and decreasing the cerebral infarct volume in rats with cerebral ischemia. It is also found that the S-configuration of the Metabolite I (the compound of claim 1) has the effect of improving sleep.
The S-configuration of the Metabolite I (the compound of claim 1) is an oily liquid and is insoluble in water. Therefore, in order to prepare it into a dosage form of injectable solution, we have conducted further studies to allow it to become a water-soluble compound by forming an ester with an acid and then forming a salt, to meet the requirement of the formulation.

Derivative of butylphthalide and preparation method and use thereof

Shijiazhuang Yiling Pharmaceutical Co., Ltd.


An optoelectronic device having a substrate and a plurality of sets of light-emitting diodes where each set includes a plurality of light-emitting diodes, a first lower electrode, a second upper electrode, an electronic component of an electronic circuit formed in a first portion of the substrate, on the side of the face of the substrate that does not bear the light-emitting diodes, and a first conductive means formed through the first portion and electrically connecting a first terminal of the electronic component to one amongst the first and second electrodes. The first conductive means of a given set is electrically-insulated from the first conductive means of the other sets.

The invention also concerns a method for manufacturing an optoelectronic device with light-emitting diodes.
In a known manner, an optoelectronic device with light-emitting diodes allows performing the conversion of an electric signal into an electromagnetic radiation.
There are optoelectronic devices, in particular display screens or images projection devices, comprising light-emitting diodes based on semiconductor materials comprising a stacking of semiconductor layers or three-dimensional elements composed mostly of at least one element from the group Ill and one element from the group V, referred to later on as a III-V compound, in particular gallium nitride (GaN), gallium and indium nitride (GalnN) and gallium and aluminum nitride (GaAIN).
A pixel of an image corresponds to the unitary element of the image displayed by a display screen or projected by a projection device. In the case where the optoelectronic device is a screen for displaying monochrome images, it generally comprises one single light source for the display of each pixel of the image. In the case where the optoelectronic device is a screen for displaying color images or a device for projecting color images, it generally comprises at least three light intensity emission and/or regulation components, also called display sub-pixels, for the display of each image pixel, each emitting a light radiation substantially in one single color (for example, red, green, and blue). The superimposition of the radiations emitted by these three display sub-pixels imparts on the observer the colored feeling corresponding to the pixel of the displayed image. In this case, by display pixel, it should be understood the set formed by the three sub-pixels used for the display of one image pixel.
In general, each sub-pixel is constituted by a set composed by one or several light-emitting diode(s), an optoelectronic device thus comprising a plurality of such sets of light-emitting diodes for constituting the different sub-pixels.
In order to manufacture each pixel, a first solution consists in providing a set of diodes adapted to emit red light, another set of diodes adapted to emit green light and another set adapted to emit blue light. But this type of design requires the manufacture of the diodes of a given color on the same substrate, which is cut afterwards in order to delimit individual devices. Each pixel is then obtained by reconstruction in order to associate the individual devices so as to obtain the three colors.
An alternative solution consists in providing for all of the diodes of one pixel being adapted to emit in a given color, the obtainment of the sub-pixels emitting in the two other colors being obtained through color converters.
Afterwards, the different sub-pixels thus obtained by reconstruction or using color converters are disposed within a case so as to protect the light-emitting diodes, which case is generally fastened to a support, such as a printed circuit.
In particular, it may be desirable to associate to each set of light-emitting diodes, a control electronic circuit whose function consists in controlling the light-emitting diodes of this set, for example in order to regulate the emission of each sub-pixel of each image pixel. More generally, it consists, for example, of a circuit for controlling the power supply of the light-emitting diodes, a circuit for protecting the light-emitting diodes against electrostatic discharges or a circuit for detecting the temperature of the light-emitting diodes.
These circuits, which may comprise a few transistors (for example in an amount comprised between 2 and 100) and possibly some capacitors (in an amount comprised between 0 and 6) for each light-emitting diode, may be connected to the light-emitting diodes by a hybridization technique. In this technique, the electronic circuits are first manufactured on a second substrate, separately from the optoelectronic device, and then assembled to the optoelectronic device, for example by being fastened to the support and connected to the case.
This known technique poses a problem because the bulk due to the electronic circuits may be considerable. It generates a high cost because of the need for using a second substrate. It requires providing for a hybridization process having a step corresponding to the step of the matrix of the light-emitting diodes. In addition to the manufacture of the optoelectronic device, the method comprises distinct steps of manufacturing the electronic circuits and steps of connecting the electronic circuits to the optoelectronic device. These steps generate manufacturing costs.
Another solution consists in embedding the components of the electronic circuits over the face of the substrate that bears the light-emitting diodes, for example in the same way as the solution described in the document WO2015/044619A1 on the name of the Applicant. But this solution induces a substantial loss of space on the side of the light-emitting diodes because of the space occupied by the implantation of the electronic circuits between the light-emitting diodes. This loss of space results in this technique not being perfectly suited to the construction of a display screen where the best possible resolution is commonly desired.
Resorting to electronic circuits using thin film transistors, known in the concerned field under the name «TFT», does not allow solving these problems because transistors of this kind cannot be associated to small-sized pixels.

Optoelectronic device with electronic components at the level of the rear face of the substrate and manufacturing method


Apparatus and methods are described, including apparatus for treating a subject for obstructive sleep apnea (OSA). The apparatus includes an implant, an imaging device, and a control unit. In response to a set of training images received from the imaging device, the control unit learns an association between a position of a head of the subject and OSA of the subject. In response to the association, the control unit establishes, for an OSA-related parameter, at least two distinct thresholds corresponding to respective different head positions. Subsequently, at a second time, the control unit selects a threshold that corresponds to the position of the subject's head, and if the value of the OSA-related parameter passes the selected threshold, treats the subject for OSA by driving the implant to apply current to an anatomical site of the subject. Other applications are also described.

Sleep apnea is a chronic sleep breathing disorder typically characterized by abnormal pauses (apneas) in an individual's breathing, or alternatively, by instances of abnormally low breathing. Each apnea event can range in duration from seconds to minutes. Sleep apnea, although often unrecognized for years by the subject herself, can have long term health effects: Sleep apnea and other sleep breathing disorders are associated with cardiovascular disease, myocardial infarction, high blood pressure, stroke, arrhythmias, diabetes, sleep-deprived driving accidents, and cerebrovascular disease.
In general, there are three forms of sleep apnea: central sleep apnea (CSA), obstructive sleep apnea (OSA), and complex sleep apnea—a heterogeneous group of sleep-related breathing disturbances, with characteristics partially related to both CSA and OSA.
With CSA, cessations in air flow occur without respiratory effort. With OSA (alternatively, obstructive sleep apnea/hypopnea syndrome (OSAHS)), which has overlapping pathogenesis and clinical presentation with CSA, in subject's breathing is interrupted by a physical blockage in the airflow, often characterized, but not limited to snoring and restless sleep. Cardiac output also tends to decrease during apnea events. Snoring, along with other risk factors such as obesity, diabetes or smoking, is often indicative of OSA, particularly when snoring is punctuated by deep gasps.
OSA, the most common form of sleep apnea, is characterized by repetitive collapse and reopening of the upper airway during sleep, resulting in complete or partial blockage of the upper airway during sleep and leading to hypoxemia and hypercapnia. Typically, dilator muscles in the subject's airway stiffen and dilate various regions of the upper airway while the subject is awake. This activity, however, is reduced during sleep, effectively narrowing the upper airway. Of the dilator muscles, the largest is the genioglossus, (the muscle that forms the majority of the tongue).
Current treatments includes positive airway pressure (PAP) therapy, particularly, continuous positive expiratory pressure (CPAP), oral appliances, surgery, including genioglossus advancement, tongue radiofrequency treatment, midline glossectomy, hyoid suspension, maxillomandibular advancement, and lifestyle changes such as positional therapy and weight loss.


A method of site preparation in environmentally sensitive areas. A first step involves determining boundaries of a site. A second step involves removing obstacles, if any, from within the boundaries of the site. A third step involves laying a layer of interlocking wood fibre on the site. A fourth step involves packing down the layer to form a cohesive ground cover mat. The steps of laying a layer of interlocking wood fibre on the site and packing down the layer is repeated to increase a thickness of the cohesive ground cover mat, until a hard packed base of at least six inches in depth has been formed.

It is preferable to minimize environmental damage when working in environmentally sensitive areas. The oil and gas drilling is an example of an application in which a temporary site access is required. An example of environmentally sensitive areas are public wilderness park lands or private farm lands. Drilling permits are refused on public wilderness park lands, unless stringent conditions are met to protect the environment. Private farm lands must be restored to their former use. The greater the environmental damage caused during the drilling operations, the more expensive it becomes to restore the lands to their former use as farm lands.

Method of site preparation in environmentally sensitive areas


The invention relates to a powered reciprocating saw. To simplify use of the saw, a clamping mechanism is provided which holds an object in position while it is sawn. The clamping mechanism is mounted at the front of the housing of the saw near the saw blade. The clamping mechanism comprises: a slide element for sliding movement in the cutting direction, a supporting member, and a clamping arm rotatably mounted on the slide element by a one way clutch to clamp an object therebetween in a clamping position below the saw blade. When the saw is in use, it vibrates. Since the clamping arm has a moment of inertia with respect to the axis of rotation of the one way clutch, the oscillating movement is transformed into a progressive rotational movement of the clamping arm to clamp an object.

A typical reciprocating saw is disclosed in GB 2 234 033. The reciprocating saw disclosed therein comprises a housing having a handle portion and a front portion from which a saw blade extends. The saw blade is guided for reciprocating movement and is connected to a drive mechanism within the housing which drives the saw blade to reciprocate. A typical example of saws of this kind are pruning saws used for cutting the branches of trees, bushes and the like. In this field of application the user holds the saw at the handle portion and brings the reciprocating saw blade into contact with the branch to be cut. The reciprocating saw blade is slowly moved through the branch while cutting it. The reciprocating movements of the saw blade exert forces on the object which is sawn, i.e. the object, for example a branch, tries to follow the reciprocating movement of the saw blade since there is a considerable friction between the reciprocating saw blade and the branch. Therefore, the user has to grip the branch and hold it tightly with one hand against the saw, while the pruning saw is held in the other hand in order to achieve an accurate cut. The need to hold the object, e.g. a branch, to be sawn with the reciprocating saw can make the saw very inconvenient to use.
Another problem or inconvenience arises due to the fact that the user has to absorb the oscillating forces which act between the reciprocating saw and the object which is sawn. When the user grips the branch to be cut and holds the reciprocating saw with the other hand he has to absorb the reciprocating forces acting between the branch and the saw with his arms. On the one hand this makes use of the saw tiring, and on the other hand, since the user cannot hold the branch completely fixed, the cut can be inaccurate if the saw is not steadily held in the same position with respect to the branch.
The problems outlined above do not apply to pruning saws only but to reciprocating saws in general. Whenever the object to be sawn has a certain flexibility or is not fixed and so has to be held by the user, for example when a rod has to be cut into pieces of shorter length, problems as described above arise.
The problems are further exacerbated when the branches of trees and bushes high above a user are cut using a reciprocating saw mounted on an extension arm or pole. In this case a user cannot reach the branch to be cut to hold it while it is cut. Thus, the reciprocating movement of the blade is transferred to the branch and the branch reciprocates also. This reduces the cutting performance of the saw, can lead to inaccurate cuts being made and tends to increase the length of time required to complete the task in hand.
It is therefore desirable to have a clamping device to hold the object to be saw stationary to prevent it from following the reciprocating movement of the saw blade whilst allowing the saw blade to cut through the object.
One such clamping device for a compass saw is disclosed in GB 2,182,282 and comprises a clamping holder in the form of a part circular bracket which is pivotally mounted at its centre on the body of the saw. On one arm of the part circular bracket is a clamping jaw having two inwardly facing clamping surfaces. On the other arm of the part circular bracket is a clamping part which comprises a threaded shaft which screws through a corresponding threaded hole, the direction of travel of the shaft as it screws into or out of the hole being within the plane of the clamping device either towards or away from the clamping jaw. In operation, the workpiece to be cut is inserted into the region bounded by the part circular bracket and is clamped between the clamping part and the clamping jaw by screwing the clamping part towards the clamping jaw and trapping the workpiece in between. As the blade of the saw cuts through the workpiece, the clamping device pivots to allow the workpiece to remain in contact with the cutting edge of the saw blade.
The clamping device disclosed in GB 2,182,282 must be firmly attached to the object to be sawn by the user prior to commencing the sawing operation. This can be difficult if the object to be sawn is located in an awkward position, for example, if it is a branch high up in a tree. The user is required to use both hands whilst attaching the clamp, one to hold the clamping device against the object to be cut whilst the other tightens the clamping part to hold the object to be cut. Furthermore, as the clamping device is firmly attached to the object to be cut, the only movement relative to the object to be cut which the body of the saw can make whilst cutting through the object to be cut is a pivotal movement. This may be undesirable in certain situations where there is insufficient room for the body of the saw to pivot.
DE 4429408 also disclosed a clamping device for a compass saw. The clamping device comprises a structure similar to a pipe wrench which is pivotally mounted on the saw housing. The object to be sawn is clamped by turning a knob which in turn rotates a threaded spindle to bring two clamping surfaces of the wrench into engagement with and thus hold the object. The clamping device disclosed in DE 4429408 suffers from the same problems as those suffered by the clamping device in GB 2,182,282.


The present invention is an ergonomic make-up shield. The make-up shield comprises an eye portion having a curved smooth edge for engaging against a person's face adjacent to the eye. The eye portion further has two side edges which define a first plane. The make-up shield also comprises a handle portion integrally attached to the eye portion. The handle portion forms a solid closed planar surface extending downwardly in a second plane essentially perpendicular to the first plane. Preferably, the closed planar surface provides a surface area of at least 0.50 square inches for providing ample surface area for ease of handling and ergonomic wrist positioning. The natural position of the wrist while grasping the handle portion between the thumb and the index finger turns the hand and knuckles sideways to provide a clear open area which is specifically the area where the other hand applies the make-up to the face. Another critical feature of the present invention is that the handle portion has a solid closed surface which provides a large surface area. In this manner the fingers can grasp and regrasp the handle in numerous locations. This feature is significant because the person cannot see the make-up shield during use due to its proximity to the eye and thus a large surface area is needed for the fingers to grasp and perhaps reposition on the handle.

During application of make-up, such as mascara, it is a common problem that the make-up can end up on parts of the face where it is not desired. Accordingly, in the past, there have been attempts to provide a make-up shield which engage against the face to form a surface which prevents the make-up from being deposited on the face during make-up application. However, these make-up shields, in general, have been designed without little regard for comfort and ease of handling. Accordingly, few if any of these clumsy make-up shields are used or marketed.
The present invention discloses a make-up shield which is ergonomically designed. Its shape, besides being highly aesthetic, is easy to grasp and manipulate. These features are critical in that many people desire to make the process of make-up application a pleasing hassle free experience.


A dehumidifying radome vent in open communication between a radome and the external environment for passively ventilating and dehumidifying the radome. The dehumidifying radome vent is a duct receiving a water aerosol comprised of air and water. The duct passively decreases a flow rate of the water aerosol so as to remove water from the air and ventilate the radome. To this end, the duct defines two or more cross-sectional flow areas along a predetermined flow path. These cross-sectional flow areas include a first cross-sectional flow area and a second cross-sectional flow area. The second cross-sectional flow area is larger than the first cross-sectional flow area for passively decreasing the flow rate and dehumidifying the aerosol.

Satellite antenna radomes can trap moisture and heat, which may lead to the corrosion and overheating of the satellite antenna contained therein. A radome having two or more unobstructed vent openings can receive large volumes of ambient air to cool the antenna to the outside ambient temperature. However, this opening may also introduce rain and salt water, such as an aerosol, into the radome. The rain, salt water, and other condensation can produce mildew, corrosion, water accumulation, and other adverse conditions. On the other hand, a sealed radome enclosure can trap humidity, which may condense to its liquid form once the air temperature drops and thus produce the associated problems.
One known radome is a sealed enclosure with a heating element for continuously adding heat and therefore minimizing condensation. In this way, the heated enclosure decreases the variation in relative humidity, which may otherwise occur in an unheated sealed enclosure. However, this radome is power inefficient and furthermore is impractical in view of temporary out-of-use conditions that are commonly associated with maritime operations. Also, it is understood that the continuous production of heat can cause the antenna to overheat. This radome merely dissipates heat by radiation and conduction. The radome may be made of a composite (sandwich) construction to enhance stiffness and decrease radio frequency losses, which decreases thermal conductivity, making heat removal by conduction difficult (occurring largely through the base by conduction).
It would, therefore, be highly desirable to provide a dehumidifying radome vent that passively ventilates a radome and removes moisture without consuming power to do the same.


A method and apparatus is provided that facilitates low-power consumption during a suspend mode of operation of an integrated circuit (IC), while substantially eliminating current paths within the IC that may be created should any of the power supplies be deactivated during the suspend mode. Deactivation of one or more power supplies during a normal mode of operation is also facilitated, whereby current paths created by the deactivated power supplies are also eliminated. Voltage bias circuitry is added to certain voltage regulators within the IC, so as to maintain those voltage regulators inactive due to a drop in voltage magnitude that is sensed when one or more power supplies are disabled. In addition, a well bias circuit is employed to maintain the substrate bias potential of certain devices within the voltage regulators and associated amplifiers to a fixed potential depending upon the operational mode of the IC.

PLDs are a well-known type of integrated circuit that may be programmed to perform specified logic functions. One type of PLD, the Field Programmable Gate Array (FPGA), typically includes an array of programmable tiles. These programmable tiles can include, for example, Input/Output Blocks (IOBs), Configurable Logic Blocks (CLBs), dedicated Random Access Memory Blocks (BRAMs), multipliers, Digital Signal Processing blocks (DSPs), processors, clock managers, Delay Lock Loops (DLLs), Multi-Gigabit Transceivers (MGTs) and so forth.
Each programmable tile typically includes both programmable interconnect and programmable logic. The programmable interconnect typically includes a large number of interconnect lines of varying lengths interconnected by Programmable Interconnect Points (PIPs). The programmable logic implements the logic of a user design using programmable elements that may include, for example, function generators, registers, arithmetic logic, and so forth.
The programmable interconnect and the programmable logic are typically programmed by loading a stream of configuration data into internal configuration memory cells during a configuration event that defines how the programmable elements are configured. The configuration data may be read from memory (e.g., from an external PROM) or written into the FPGA by an external device. The collective states of the individual memory cells then determine the function of the FPGA.
Another type of PLD is the Complex Programmable Logic Device, or CPLD. A CPLD includes two or more "function blocks" connected together and to input/output (I/O) resources by an interconnect switch matrix. Each function block of the CPLD includes a two-level AND/OR structure similar to those used in Programmable Logic Arrays (PLAs) and Programmable Array Logic (PAL) devices. In CPLDs, configuration data is typically stored on-chip in non-volatile memory. In some CPLDs, configuration data is stored on-chip in non-volatile memory, then downloaded to volatile memory as part of an initial configuration (programming) sequence.
For all of these PLDs, the functionality of the device is controlled by configuration data bits provided to the device for that purpose. The configuration data bits can be stored in volatile memory (e.g., static memory cells, as in FPGAs and some CPLDs), in non-volatile memory (e.g., FLASH memory, as in some CPLDs), or in any other type of memory cell. Static random access memory (SRAM) is an exemplary memory device that is commonly used to store the configuration data bits. The contents of SRAM, however, is lost whenever operational power is removed. As such, operational power is required at all times to maintain the contents of the SRAM intact.
Some PLDs, such as the Xilinx Virtex® FPGA, can be programmed to incorporate blocks with pre-designed functionalities, i.e., "cores". A core can include a predetermined set of configuration data bits that program the FPGA to perform one or more functions. Alternatively, a core can include source code or schematics that describe the logic and connectivity of a design. Typical cores can provide, but are not limited to, DSP functions, memories, storage elements, and math functions. Some cores include an optimally floor planned layout targeted to a specific family of FPGAs. Cores can also be parameterizable, i.e., allowing the user to enter parameters to activate or change certain core functionality.
Generally, one or more power supplies are often utilized to provide operational power to one or more regions within the PLD. For example, a first power supply may be utilized to provide operational power to core logic within the PLD, such as CLBs and BRAMS, while a second power supply may be used to provide operational power to IOBs, DSPs, memory cells, and other higher voltage circuitry within the PLD. Other power supplies may also be used as necessary depending upon the application.
For example, FIG. 1 exemplifies PLD 100, whereby two power supplies, e.g., VCCAUX and VCCINT, are utilized. Upon power-up of PLD 100, power-on reset (POR) circuit 114 deasserts the control terminal of p-type metal oxide semiconductor (PMOS) transistor 106 to logic a low value, which causes PMOS transistor 106 to transition to a conductive state. The conductive state of PMOS transistor 106 allows current to flow from VCCINT to node 110, thereby charging node 110 to a voltage magnitude that is substantially equal to VCCINT during the power-up sequence.
Once node 110 has reached an acceptable voltage magnitude, e.g., acceptable for initializing PLD circuits 108, POR circuit 114 asserts the control terminal of PMOS transistor 106 to a logic high value, which renders PMOS transistor 106 non-conductive, so as to isolate VCCINT from node 110. Operational amplifier 102 then becomes operational and regulates the voltage magnitude at node 110 using VCCAUX by adjusting the gate voltage of PMOS transistor 104 until node 110 achieves a voltage magnitude that is substantially equal to VREF. As can be seen, however, device 100 does not exhibit a low-power, or suspend mode of operation, since all components of PLD 100, except PMOS transistor 106, remain active once the power-up sequence is complete.
Some FPGAs, therefore, may be configured to provide the lowest possible standby power, i.e., during a suspend mode of operation, which minimizes the amount of operational power that is consumed. In particular, after the PLD enters the suspend mode, all non-essential PLD functions are shut down to minimize power dissipation. All writable clocked elements are write protected against spurious write operations and all PLD inputs and outputs are shut down, which allows the application state of the PLD to be held static during suspend mode. Operational power is, however, maintained to critical circuits within the PLD, such as the SRAM configuration memory, so as to preserve the configured state of the PLD during the suspend mode.
Turning to FIG. 2, for example, an exemplary embodiment of PLD 200 is illustrated, in which a low-power operation during the suspend mode is facilitated. Operation of PLD 200 during normal operation, i.e., the awake mode, is such that signal SUSPEND is deasserted to a logic low level. In response, suspend circuit 216 deasserts signal DISABLE and asserts signal POWER DOWN, which renders transistor 210 non-conductive. In response, operational amplifier 202, in combination with transistor 204, regulates the voltage magnitude at node 212 to be substantially equal to VREF to supply operational power to PLD circuits 214.
The operation of well bias circuit 208 is discussed in U.S. patent Ser. No. 11/252,504 filed on Oct. 18, 2005 by Narasimhan Vasudevan and is incorporated herein by reference in its entirety. Generally, well bias circuit 208 maintains the well potential of transistors 204 and 210 at a voltage magnitude that prevents inadvertent forward biasing of the body diodes that exist within transistors 204 and 210. During the awake mode, for example, the voltage magnitude, VB1, is applied to the well region of transistor 204 by well bias circuit 208 and is substantially equal to VCCAUX. Similarly, the voltage magnitude, VB2, is applied to the well region of transistor 210 by well bias circuit 208 and is substantially equal to the voltage magnitude at node 212. As such, inadvertent forward biasing of the body diodes within transistors 204 and 210 is substantially prevented.
The suspend mode of operation is entered by asserting signal SUSPEND, which causes suspend circuit 216 to assert signal DISABLE. In response, the voltage magnitude at the output of operational amplifier 202 is substantially equal to VCCAUX, which renders transistor 204 non-conductive. In addition, suspend circuit 216 deasserts signal POWER DOWN, which causes transistor 210 to enter a conductive state. In response, the voltage magnitude at node 212 is substantially equal to VCCINT by operation of transistor 210. PLD circuits 214 then derive operational power from VCCINT, which is at a lower voltage magnitude than VREF. In one embodiment, PLD circuits 214 are composed of static random access memory (SRAM), which provides the configuration memory for PLD 200. The leakage current of SRAM decreases exponentially with decreasing supply voltage. Thus, the amount of power consumed by the SRAM during the suspend mode is reduced considerably because the voltage magnitude of VCCINT is generally lower than the voltage magnitude of VREF. Thus, operational power is further reduced even while conserving the configuration memory of PLD 200 during the suspend mode.
As can be verified from FIG. 2, however, deactivation of power supply VCCAUX or VCCINT causes a low-impedance current path to exist. For example, if power supply VCCAUX is deactivated during the SUSPEND mode of operation, then a low-impedance current path exists from VCCINT through transistor 210, node 212 and transistor 204. The current path exists because the body diode of transistor 204 is forward biased due to the voltage magnitude of the drain terminal of transistor 204 being at a higher potential, e.g., VCCINT, than the voltage magnitude of the well region of transistor 204, e.g., ground potential, due to the deactivated power supply VCCAUX. In addition, the voltage magnitude at the control terminal of transistor 204 is also substantially zero due to the disablement of VCCAUX, which renders transistor 204 conductive to create a low-impedance current path between VCCAUX and VCCINT.
If power supply VCCINT is deactivated during the awake mode of operation, on the other hand, then a low-impedance current path exists from VCCAUX through transistor 204, node 212 and transistor 210. The current path exists because the body diode of transistor 210 is forward biased due to the voltage magnitude of the drain terminal of transistor 210 being at a higher potential, e.g., VREF, than the voltage magnitude of the well region of transistor 210, e.g., ground potential, due to the deactivated power supply VCCINT. In addition, the voltage magnitude at the control terminal of transistor 210 could be substantially equal to zero, which renders transistor 210 conductive to create a low-impedance current path between VCCAUX and VCCINT.
Turning to FIG. 3, an alternate embodiment of PLD 300 is illustrated, in which a low-power operation during the suspend mode is facilitated, whereby activation of VCCINT during the suspend mode occurs in response to sensing the voltage magnitude output of operational amplifier 302 after a time delay. In particular, once signal SUSPEND is asserted, signal DISABLE is also asserted within suspend circuit 316 to deactivate operational amplifier 302. Once deactivated, the output voltage magnitude of operational amplifier 302 at node 304 is substantially equal to VCCAUX, which causes transistors 306 and 318 to enter a non-conductive state. Once transistor 318 is rendered non-conductive and after delay 322, transistor 320 is rendered conductive to deassert signal SENSE to a logic low level. In response, transistor 310 is rendered conductive to allow PLD circuits 314 to derive operational power from power supply VCCINT via node 312 during the suspend mode.
The PLD of FIG. 3, however, causes low-impedance current paths to exist during the deactivation of power supply VCCAUX or VCCINT for similar reasons as discussed above in relation to FIG. 2. Efforts continue, therefore, to provide means to prevent current flow through the low-impedance current paths that are created when one or more power supplies are deactivated during the suspend or awake modes of operation.

Enhanced voltage regulation with power supply disable capability for low-power operation