A method of manufacturing a surface acoustic wave device having a high electromechanical coefficient and reflection coefficient, and also having an improved frequency-temperature characteristic is achieved by forming a SiO2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO2 film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO3 substrate, and a SiO2 film disposed on the LiTaO3 substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.

1. Field of the Invention
The present invention relates to surface acoustic wave devices used for resonators, bandpass filters, and other such devices, and more particularly, relates to a surface acoustic wave device using a rotation-Y plate X propagation LiTaO3 substrate and a method for manufacturing the same.
2. Description of the Related Art
In mobile communication apparatuses such as mobile phones, surface acoustic wave filters have been used, for example, as bandpass filters or duplexers in the RF stage. As this type of surface acoustic wave filter, surface acoustic wave filters using a leakage surface acoustic wave, which filters are each formed of an IDT (interdigital transducer) made of Al and provided on a 36° to 46° rotation-Y plate X propagation LiTaO3 substrate, have been used.
However, this surface acoustic wave filter has a poor frequency-temperature characteristic of −30 ppm/° C. to −40 ppm/° C., and hence it is necessary to improve the frequency-temperature characteristic. Accordingly, in order to improve the frequency-temperature characteristic, a resonator has been proposed having the structure in which after an IDT composed of Al having a normalized thickness of 0.01 to 0.04 is formed on a 36° rotation-Y plate X propagation (Euler angles: 0°, 126°, 0°) LiTaO3 substrate, a SiO2 film is further provided thereon (for example, in Japanese Unexamined Patent Application Publication No. 02-295212). In this structure, by forming the SiO2 film, the frequency-temperature characteristic is improved.
However, when IDTs are formed by using Al so as to produce filters, in order to obtain a sufficiently high reflection coefficient or electromechanical coefficient Ksaw, the IDT must have a relatively large electrode thickness H/λ (H indicates the thickness, and λ indicates the wavelength of a surface acoustic wave) of 0.08 to 0.10 (for example, in O. Kawachi et al., "Optimum Cut of LiTaO3 for High Performance Leaky Surface Acoustic Wave Filters", Proc. 1996 IEEE Ultrasonic Symp., pp. 71-76).
As described above, since the IDT composed of Al has a relatively large thickness, when a SiO2 film is formed at parts shown in FIG. 25A for improving the frequency-temperature characteristic, as shown in FIGS. 25B and 25C, large steps are formed by the SiO2 film. As a result, cracks may be generated therein in some cases. Accordingly, due to the generation of the cracks, filter characteristics of the surface acoustic wave filter are degraded.
In addition, since the electrode of the IDT composed of Al is relatively large, an effect of covering the irregularities of the electrode surface of the IDT cannot be satisfactorily obtained by forming the SiO2 film, and hence the temperature characteristics may not be sufficiently improved.

Method for manufacturing a surface acoustic wave device


Disclosed are magnetic agitation mixing systems for use with flexible container reaction vessels. In one aspect of the invention, the orientation of magnetic coupling between the impeller magnets and the external driver magnets is modified such that the coupling is neither strictly axial nor strictly radial. Also disclosed are “receiver-less” retainer configurations whereby the single-use container need not have a rigid base that defines a cup or post to engage of rotatable agitator.

Chemical mixing systems often include an agitator mechanically connected to a drive shaft or a post that is lowered into a fluid through an opening in the top of a vessel, and then rotated using external motors. In closed systems, agitators are often connected to external motors via hydraulically sealed drive shafts. However, because of potential contamination of the fluid in the vessel and potential leaking, these types of agitator are generally not practical for mixers and bioreactors used in manufacturing of pharmaceuticals or biological materials.
Magnetic coupling of an agitator inside the vessel to a drive system or motor external to the mixer or bioreactor can eliminate contamination issues, allow for a completely enclosed system, and prevent leakage. Because there is no need to have a drive shaft penetrate the bag support structure wall to mechanically spin the agitator, magnetically coupled systems can eliminate the need for having seals between the drive shaft and the vessel. Most magnetic agitator systems include a rotating magnetic drive head outside of the vessel and a rotating magnetic agitator (also referred to in this context as the "impeller") within the vessel. The movement of the magnetic drive head enables torque transfer and thus rotation of the magnetic agitator allowing the agitator to mix a substance within the vessel.
Increasingly, in the biopharmaceutical industry, single use or disposable containers are used. Such containers can be flexible or collapsible plastic bags that are supported by an outer rigid structure such as a stainless steel shell. Use of sterilized disposable bags eliminates time-consuming step of cleaning of the vessel and reduces the chance of contamination. Combining the single use or disposable bags with the magnetic agitator system establishes a sterile environment that is especially important for biopharmaceutical manufacturing.
Magnetic agitator systems currently include particular components to both retain the magnetic agitating element in a certain position within the flexible bag during mixing, and also to maintain coupling and proper alignment between the magnetic agitator and the external magnetic drive head or system. Examples of such components include post or cup-like "receiver" structures that are formed as part of the disposable container, typically as part of a rigid bottom or base of a disposable bag. Such receiver structures added to the expense of container manufacturing—and introduce regions of possible vessel failure if the spinning agitator repeatedly comes in contact with a portion of the receiver structure.
Moreover, the fusion of a thick rigid bottom segment to a container bag also complicates the placement of other process control elements. For example, bioreactor systems typically utilize spargers for introducing a controlled amount of a specific gas or combination of gases into the bioreactor. A sparger outputs small gas bubbles into a liquid in order to agitate and/or dissolve the gas into the liquid. The delivery of gas via spargers helps in mixing a substance, maintaining a homogenous environment throughout the vessel, and is sometimes essential for growing cells in a bioreactor. Ideally, the spargers and the agitator are in close proximity to ensure optimal distribution of the gases throughout the container.
Another problem with magnetic agitator systems lies in how the impeller and driver magnets are coupled together. Two different orientations of the impeller magnets and external driver magnets are commonly used. The two orientations are axial and radial. "Axial orientation" generally means that the direction of the magnetic coupling between the internal and external rotating components is parallel to the axis around which the internal and external components are rotating. The terms "radial" and "Radial orientation" mean that the direction of the magnetic coupling between the internal and external rotating components is at an angle that is not parallel to axis of rotation, e.g., perpendicular to the axis around which the internal and external components are rotating or some intermediate angle greater than 0 degrees and less than 90 degrees relative to the axis of rotation.
In an axially coupled magnetic coupling system the direction of the coupling and de-coupling force is parallel to the direction of the magnetic coupling force. If the nonlinear attractive force between the internal and the external system components during coupling cannot be adequately controlled, the internal and external components can forcefully slam together, damaging the components. Conversely, the force required to separate the internal and external components could damage the components by overstressing the components during de-coupling as the components are pulled apart. This is especially true for the coupling components of a disposable system wherein at least some of the components might be constructed from plastic.
In a radially coupled magnetic coupling system, the nonlinear attractive forces between the internal and external components must also be overcome in a controlled manner when the components approach one other during coupling and as they recede from one other during de-coupling. In the case of a radially coupled system, the forces during coupling and de-coupling would result in what could be called a shearing force; that is, the direction of the force would be perpendicular to the magnetic coupling. If the nonlinear attractive force between the internal and the external system components during coupling cannot be adequately controlled the internal and external components can forcefully slam together on one side of the system, resulting in non-alignment of the coupling components and damaging the components. Conversely, during de-coupling when the internal and external components separate, the components could again slam together in a sideways motion and this could damage the components. Again, this is especially true for the coupling components of a disposable system wherein at least some of the components are plastic materials.
In the worst cases, misalignment of the driver and impeller magnets can lead to complete decoupling and the ejection of the agitator into the fluid volume of the container. Unless the agitator can be re-coupled to the drive mechanism, no further mixing can be accomplished and the batch may be compromised in an attempt to reseat the impeller or, failing successful re-coupling, the entire batch being processed must be discarded. The possibility of decoupling increases with the height of the agitator. In large batch containers, it can be desirable to have the agitator to have an axial shaft that extends for a substantial portion, if not the entire height, of the container and carries several separate sets of vanes, for example, to mix the top, middle and bottom of the fluid column in the container simultaneously. Because the center of gravity for such extended length agitators is at a distance from the impeller hub, misalignment can quickly lead to wobbling and, ultimately, detachment especially at high rotational speeds.
A variety of vessels, devices, components and unit operations for manipulating liquids and/or for carrying out biochemical and/or biological processes are available. Increasingly, single-use or disposable bioreactor bags and single-use mixer bags are used as such vessels. For instance, biological materials (e.g., animal and plant cells) including, for example, mammalian, plant or insect cells and microbial cultures can be processed using bioreactors that include single-use processing bags. Manufacturing of complex biological products such as proteins, monoclonal antibodies, etc.) requires, in many instances, multiple processing steps ranging from fermentation or cell culture (bacteria, yeast, insect, fungi, etc.), to primary recovery and purification. Conventional bioreactor-based manufacturing of biological products generally utilizes batch, or fed-batch processing, or continuous or perfusion mode processing with subsequent off-line laboratory analysis conducted on representative samples collected from various points of the process to ensure quality.
In order to obtain timely information regarding changing conditions within a bioreactor during its operation, the use of sensor technology has been employed. There are recognized difficulties in attaching a sensor to the inside of a flexible-walled bioreactor or flexible tubing. Further, optical, electrical, and pH sensors, for example, positioned inside a flexible bag or tubing require an attachment means that allows for a clear signal to be communicated to or from external analytical instrumentation. There is an ongoing need for an improved disposable sensor assembly and a method for integrating a disposable sensor in flexible disposable bioreactor bags and in downstream tubing.
An improved device and method for integrating a disposable sensor in a flexible bioreactor bag or tubing would also be beneficial for use in bioreactor-based manufacturing systems that include in-line sensing in order to provide real-time data.
Further, there is a need for better disposable bioreactor systems that address one or more of the aforementioned problems. There is a further need for simpler, less expensive, more efficient and/or more robust, magnetic agitation mixer systems for biopharmaceutical manufacturing.

Single-use mixing and bioreactor systems


A double layer capacitor comprising a conductive solid in contact with a gas, preferably an inert gas, to form a double layer capacitor of unusually high specific energy density (energy to weight ratio). The device may be sized for use with microelectronics or scaled up for use in electrical utility storage and may be controlled to provide variable conductance as an active element.

Double layer capacitors employing conductive solid and liquid electrolytes operate on a different principle from that employed in double-plate electrolytic capacitors. In these capacitors, a double layer of electrical charge occurs at the interface of the conducting solid and the liquid electrolyte. Typically, the conducting solid is immersed in a liquid electrolyte, such as a dilute sulfuric acid. A layer several atoms thick just inside the surface of the conducting solid constitutes one electrode of the capacitor, while the second electrode is a "virtual" electrode within the electrolyte. At the interface, a space of 1 to 2 Angstroms outside of the solid electrode contains the virtual electrode. A polarized layer of solvent molecules is attracted to the electric field of the electron layer. Outside the polarized (dipole) layer is a second charged area which contains ion particles in a diffuse layer extending about 25 Angstroms into the solvent bulk. Commercial double layer capacitors include two conductors separated by the liquid electrolyte and an ion permeable separator and are bipolar devices. The charge held in the capacitor is discharged through a load, using the ions in the electrolyte to complete the circuit between the virtual electrodes of the bipolar device. Without this ion-charged transfer path, the energy at the virtual electrodes would be inaccessible.
High capacitance is obtained in these devices by using activated charcoal for the solid electrode. The activated charcoal is a highly porous substance that has a very large surface area. For example, one gram of activated charcoal may have a surface area of 1,000 to 2,000 square meters.
Double layer capacitors, unlike batteries, can be cycled indefinitely and have at least a 10 year life. Further, these devices can easily be soldered into place, usually do not leak or explode, and easily indicate their charge. Further, they do not exhibit the undesired memory effect that is common to batteries such as Ni-Cd batteries.
Additionally, double layer capacitors can be operated over a wider temperature range than batteries. For example, these capacitors can be operated over a range from -25.degree. C. to +70.degree. C. and can be stored over a range from -40.degree. C. to +85.degree. C.
One drawback of the double layer capacitors employing a conducting solid and a liquid electrolyte, however, is the working voltage of such capacitors. The sulfuric acid solution commonly used in the commercially available double layer capacitors will decompose into hydrogen and oxygen with an electrical charge in excess of approximately 1.2 volts. Consequently, such a single double layer capacitor element has a maximum working voltage of only 1.2 volts. Should this working voltage be exceeded, there will be a chemical disassociation which can damage the device. With such a low working voltage, the double layer capacitor has limitations in applications.
To increase the voltage, such capacitors must be connected in series. However, such a connection has two drawbacks. First, the total capacitance decreases when connecting capacitors in series, and, further, the resistance increases which reduces the current handling capabilities by causing power dissipation or losses in both the charging and discharging modes. In production double layer capacitors, as many as six capacitive cells having 6 Farads of capacitance each are connected in series. This reduces the combined 36 farads of capacitance of the 6 cells to one farad, while raising resistance by a factor of six to create an acceptable working voltage for the higher voltage application.

Solid/gas double layer capacitor and electrical storage device


An aggregate of carbon nanotubes satisfying all of the following requirements (1) to (3):

In carbon nanotubes, generally, one with the smaller number of layers has a high graphite structure. Therefore, it has been known that single-walled carbon nanotubes are high in characteristics such as electrical conductivity and heat conductivity. On the other hand, multi-walled carbon nanotubes have a low degree of graphitization, thus it has been also known that they have generally lower electrical conductivity and heat conductivity than single-walled carbon nanotubes. Since double-walled carbon nanotubes have both characteristic of single-walled carbon nanotubes and characteristic of multi-walled carbon nanotubes, there have been drawn attentions as a promising material in various applications.
In recent years, in chemical vapor deposition method (Patent document 1), plasma method (Non-patent document 1), pulse arc method (Patent document 2) and so on, it has been now known that aggregates of carbon nanotubes with high ratio of double-walled carbon nanotubes can be synthesized.
In the aggregates of carbon nanotubes produced, catalyst metal and impurities other than carbon nanotubes such as amorphous carbon and particulate carbon are mixed, and thus in order to bring out an intrinsic characteristic of carbon nanotubes sufficiently, an operation to remove the catalyst metal and carbon impurities becomes necessary.
For removing carbon impurities, generally a heating method in a gas phase is often used. For removing catalyst metal, it is common to use an acid. Although using a strong acid makes removal of catalyst metal easy, in the case of using a strong acid, carbon nanotubes are damaged and the characteristic deteriorates. Thus, practically it is necessary to use an acid having a relatively mild reactivity as an acid to be used for removal of catalyst metal. Non-patent document 2 describes that when single-walled carbon nanotubes are treated in a nitric acid solution, functionalization and defect of graphite structure take place. Non-patent document 3 denotes that when heating of multi-walled carbon nanotubes is continued, functionalization proceeds, G/D ratio in a Raman spectrum being one index showing a purity of carbon nanotubes is lowered. In a method shown concretely in Patent document 1, it is also reported that layers more than 20 layers are removed with nitric acid (which is understand on the basis of calculation from the average diameter before and after treatment, provided that interlayer distance of a carbon nanotube is 0.34 nm).
When removal of catalyst metal is only purpose, any acid which dissolves catalyst metal may be used, in general, when an acid such as nitric acid or a mixed acid of nitric acid with sulfuric acid is used, there is a fear that the surface of a carbon nanotube is functionalized, thus from the above-described reason, practically when the metal can be removed with hydrochloric acid, it is very often to use hydrochloric acid. In particular, in the case of a single-walled carbon nanotube, a graphite layer is constituted by only one layer, thus it comes under the notable influence of functionalization.
In order to increase electrical conductivity as the aggregate of carbon nanotubes, there have been devised a method that high conductive metallic carbon nanotubes are separated from semiconductive carbon nanotubes by electrocataphoresis, a synthesis method that metallic carbon nanotubes become major in a synthesis stage and the like, but they are techniques hardly applicable to carbon nanotubes with the number of layers of 2 or more, and the present situation is that double-walled carbon nanotubes having both merits of single-walled and multi-walled ones have not been obtained.    Patent document 1; Japanese Unexamined Patent Publication No. 2006-335604    Patent document 2; Japanese Unexamined Patent Publication No. 2004-168647    Patent document 3; Japanese Unexamined Patent Publication No. 2005-154200    Non-patent document 1: Journal of Physical Chemistry B, 107(2003), 8794-8798    Non-patent document 2: Journal of American Chemistry Society, 126(2004), 6095-6105    Non-patent document 3: Carbon 43(2005), 3124-3131

Carbon nanotube assembly and process for producing the same

Abstract: (1) the volume resistivity is from 1×10−5 Ω·cm to 5×10−3 Ω·cm;

Abstract: (2) at least 50 out of 100 carbon nanotubes are double-walled carbon nanotubes in observation by a transmission electron microscope; and

Abstract: (3) the weight loss from 200° C. to 400° C. in thermogravimetry at a temperature rise of 10° C/min is from 5% to 20%.


A circuit and method for judging a latent short-circuit defect, also known as a short-circuit defect with time passing, in the case of a high voltage system. A detection-dedicated wiring for detecting a short-circuit defect is provided between a first high voltage system wiring and a second high voltage wiring. A power supply and an ammeter is connected in series and one end of it is connected to the high voltage system wiring and the other end of it is connected to the detection-dedicated wiring. If a current value us higher than a predetermined value when the power supply is turned on, one can judge that the circuit has a high possibility of the latent short-circuit defect.

1. Field of the Invention
The present invention relates to a technique for detecting a short-circuit between interconnections of a semiconductor device.
2. Description of the Related Art
In the interconnections of the circuit in a semiconductor device and the like, a short-circuit is generated due to the contact of a conductive foreign matter with an interconnection and the other interconnection. This leads to the defect of a circuit. Even if the circuit is not judged as defective before shipping, there is a possibility that the circuit become defective depending on various conditions.
FIG. 1 is the plane view of a suspected substance. In FIG. 1, a conductive foreign matter 101 exists between a high-voltage interconnection A and a high-voltage interconnection B. The electric potential of the interconnection A and that of the interconnection B may be set in different. In this case, the high-voltage interconnection A and the high-voltage interconnection B are short-circuited through the conductive foreign matter
Therefore, the suspected substance can be judged as being defective in a usual test.
On the other hand, referring to FIG. 2, the conductive foreign matter 102 is placed slightly apart from the high-voltage interconnection A. Therefore, the high-voltage interconnection A and the high-voltage interconnection B are not short-circuited. Therefore, the suspected substance should not be judged as being defective in a usual test. However, a stress and the like after the test may cause the conductive foreign matter 102 to contact the high-voltage interconnection A, and the high-voltage interconnection A and the high-voltage interconnection B will be possibly short-circuited. Such a phenomenon is hereafter referred to as a "short-defect with time passing" or a "latent short-circuit defect."
A method of applying overvoltage between interconnections has been used in a low-voltage circuit to detect the short-defect with time passing. On the other hand, in the case of a high-voltage circuit, it is necessary to apply higher voltage than the one used in a usual test for detecting the short-defect with time passing by applying overvoltage as well as the low-voltage circuit, and that possibly causes elements to be broken down or deteriorated.
Japanese Laid Open Patent Application (JP-A 2004-14694) as a conventional technique discloses an interconnection test pattern characterized in including at least two resistors the resistance values of which is known on a silicon substrate; an interconnection that connects the resistors electrically in series; an adjacent interconnection formed by the same material as the mentioned interconnection, which is placed adjacent to the interconnection with a predetermined interval; and two terminals that are electrically connected to the mentioned resistors respectively.
Japanese Laid Open Patent Application (JP-A H06-29364) discloses a semiconductor device characterized in including a group of interconnection layers mutually arranged in parallel and a test means that tests whether the mentioned group of interconnection layers is normal or not, wherein the mentioned test means includes; a first potential applying means to apply a first potential to a n-th interconnection layer (n is a multiple of two including 0) in the group of interconnection layers; and a second potential applying means to apply a second potential having at least a different potential from the first potential to n+1-th interconnection layer in the group of interconnection layers, in which, the first potential is applied to the n-th interconnection layer and the second potential is applied to the n+1 interconnection layer at the same time and this status is maintained during a predetermined time.
Japanese Laid Open Patent Application (JP-A H11-23668) discloses an interconnection defect testing circuit as a testing device, which is configured corresponding to an evaluation object circuit and provided on a same substrate as the evaluation object circuit, consisting of a first interconnection and a second interconnection which are electrically insulated, in which a detection circuit forming area for the same evaluation object circuit is divided into a plural, and an insulation-defective detection can be possible in each divided area.

Short detection circuit and short detection method


A twist detecting device is capable of detecting twist of band-like cloth even though the thickness of the band-like cloth is changed, and a twist eliminating machine incorporates the twist detecting device. The twist detecting device is constructed so that cloth contactors 3a, 3b are supported by a pair of supporting axes 2a, 2b, the arcuate contacting portion r of these cloth contactors is brought into contact with band-like cloth w1 or w2, the respective cloth contactors 3a, 3b are caused to rock and to be displaced around their supporting axes by engagement with wrinkle lines of the band-like cloth, and the rocking and displacement are detected as twist information, wherein a cloth intermediate contacting member which is able to detect to the twist of band-like cloth is rockably provided around an intermediate supporting axis 13 juxtaposed between pair of supporting axes deep in a triangle-shaped space formed at the opposed sides of the arcuate contacting member of pair of cloth contactor, so that the cloth intermediate contacting member 12 is caused to rock and to be displaced around the intermediate supporting axes by engagement with the cloth contactors, and the rocking and displacement are detected as twist information of the band-like cloth.

Generally, natural twists rightward or leftward in the lengthwise direction of band-like cloth irregularly occur when dyeing or washing the band-like cloth. It is necessary to continuously eliminate the twists when spreading the band-like cloth.
Therefore, the present applicant has designed and been manufacturing a twist eliminating machine represented by a machine disclosed by Japanese Patent Publication No. 19793 of 1979, and the outline thereof is described below.
That is, as shown in FIG. 4, 1 is a cloth guide wheel which is able to guide so as to cause band-like cloth w turned rope-like by narrowing the same to go upward and continuously go down.
2a and 2b are supporting axes juxtaposed to each other, 3a and 3b are spherical cloth contactors supported by each of the supporting axes 2a, 2b, and they function as a twist detecting device of the band-like cloth w.
4 is a cloth turning device which consists of a cylindrical rotating member 4 rotatably retained around a vertical axis and a motor 4b for causing the rotating member 4 to rotate.
When using the twist eliminating machine, the band-like cloth w turned rope-like by narrowing is upwardly inserted into an inner hole of the cylindrical rotating member 4 from its lower side, and continuously is caused to go down with the same applied to the cloth guide wheel 1. Thereafter, the band-like cloth is guided so as to be brought into contact with the arcuate contacting member r of a pair of cloth contactors, and a tensile force f1 is given to the point of the band-like cloth, wherein the band-like cloth is fed and supplied.
Thereby, the band-like cloth w will move with the wrinkle lines thereof being brought into contact with the arcuate contacting member r of the cloth contactors 3a, 3b. At this time, if any twist exists on the band-like cloth w, the wrinkle lines are inclined in a fixed direction, thereby causing an engaging force to be generated between the wrinkle lines and a number of longitudinal grooves m of the arcuate contacting member r. This engaging force causes the cloth contactors 3a, 3b to rotate in either left or right direction centering around the supporting axes 2a and 2b thereof, corresponding to the orientation of the twist of the band-like cloth w, against the resiliency of a spring (not illustrated).
Only when the rotation exceeds a specified value, this is electrically detected and the detection is outputted as twist information.
While the twist information is being outputted, the motor 4b begins to rotate in a particular direction corresponding to the orientation of the twist. In line with this rotation, the cloth turning device 4 is caused to rotate, and the band-like cloth w is accordingly rotated in a direction for eliminating the twist existing at the position of the cloth contactors 3a, 3b. Therefore, while the band-like cloth w is moving, the twist thereof can be kept less than a specified level.
The conventional twist detecting device has been widely utilized in the field of the corresponding industry, and the same is beneficial, too.
However, since in this kind of device, the thickness of band-like cloth w to be handled is determined by the relative position and size of a pair of cloth contactors 3a, 3b, the scope of the use is comparatively narrow. Especially, if the thickness is very narrow less than the allowance thereof, the band-like cloth w may be engaged between a pair of cloth contactors 3a, 3b, there may be cases where a desired operation can not be achieved.
If a tensile force acting on the band-like cloth w is too strong and the cloth w is excessively strongly brought into contact with the cloth contactors 3a, 3b even though the thickness of the band-like cloth w is within the allowance, a part of the band-like cloth w may be also engaged between a pair of cloth contactors 3a, 3b, thereby causing smooth operation not to be acquired. Therefore, in order to prevent this, it is necessary that another means is provided in addition thereto.

Band-like cloth twist detecting device and twist eliminating machine


Provided are methods of manufacturing semiconductor devices. The methods may include forming a first insulation layer on a semiconductor substrate, forming a groove by selectively etching the first insulation layer, filling the groove with a copper-based conductive layer, depositing a cobalt-based capping layer on the copper-based conductive layer by electroless plating, and cleansing the first insulation layer and the cobalt-based capping layer using a basic cleansing solution.

The present invention relates to semiconductor devices, and more particularly, to methods of manufacturing semiconductor devices.
With the rapid development of the electronics industry, semiconductor devices having high speed and high integration degree have been manufactured. In order to achieve both high speed and high integration degree, copper wiring techniques have been used. However, when conventional copper wiring techniques are applied, the electromigration (EM) characteristics may be decreased due to reduction in a wiring line width. In this regard, desired electrical characteristics of the semiconductor device may not be achieved.

Methods of manufacturing semiconductor devices including a copper-based conductive layer


The present invention relates to solvent-free two-component polyurethane adhesive systems with high initial strengths and low levels of migration derived from a select reactants comprising a hydroxyl polyester and an isocyanate containing prepolymer.

There is an increasing trend towards solvent-free coating systems, both on environmental and economic grounds. In order to approach the high level of performance set by current solvent-containing products, many investigations aimed at minimizing the points of weakness of solvent-free coating systems have been performed in recent years. The points of weakness of these systems reside in the difficulty of attaining the requirement of low molecular weight of their components or expressed another way, the points of weakness reside in the difficulty of attaining the requirement of low viscosity, in order to make it possible to dispense without a solvent, and allow further processing of the manufactured article to be performed immediately, in order to dispense with costly storage and inspection of the article.
Criteria which are easy to measure in this context comprise, in particular, the initial loading capacity under stress. This may be described as the initial strength which only permits direct further processing operations to be carried out once it has reached a certain value.
Criteria which are more difficult to assess relate to problems which arise when using compounds of low molecular weight, and which may be summarized under the collective term of migration.
The latter comprises the migration of compounds of low molecular weight from the coating into the environment. Monomeric diisocyanates or possible lower oligomers are regarded as the principal causes of migration.
This migration can lead to the impairment, and in extreme cases even lead to the complete prevention of further processing. Furthermore, very stringent conditions have been prescribed by the legislature, particularly for products which come into contact with foodstuffs. This is because such products, or their decomposition products, capable of migration, can under some circumstances constitute a health hazard.
The manufacture of composite films or foils for the packaging industry is assuming an ever-widening scope, since a composite film or foil with tailored properties can be built by combining different films or foils. Polyurethanes are the preferred adhesives, since they ensure that the films or foils thereof adhere well underneath each other, are odorless and, on account of their transparency, do not result in the visual impairment of the goods to be packaged.
The common two-component systems which are currently used in industry are polyester polyols which are reacted with prepolymers based on diphenylmethane diisocyanate and containing isocyanate groups. Systems such as these provide good initial strengths, but tend to result in increased migration when they are made up incorrectly (e.g. by the use of too much prepolymer).
Systems which provide some progress in this respect have been proposed in EP 150,444 and EP 464,483. However, the prepolymers containing isocyanate groups which are proposed in EP 150,444, or the polyols containing urea groups described in EP 464,483 can only be manufactured with an associated high expenditure. Moreover, products of this composition are often highly viscous; this can lead to difficulties in their subsequent processing under some circumstances. As stated above, there is, therefore, an existing desire in industry for systems which fulfill or approximate the above-mentioned requirements, namely adhesive systems with a high initial strength which are substantially free from migration and yet have as low a viscosity as possible.
The preferred route to attaining these conditions resides in two-component systems which produce on substrates polymeric polyurethane from low molecular weight polyols and polyisocyanates. So as to rapidly achieve the final properties, systems with an overall functionality greater than two are being sought, in order to rapidly obtain a high molecular weight system due to branching.

Solvent-free, two-component polyurethane adhesive systems


A fluid handling assembly comprising a cavity in which water may become trapped due to use of the assembly, and a membrane disposed in the cavity. The membrane divides the cavity into a first sub-cavity on a first side of the membrane that is configured to collect any water trapped in the cavity and a second sub-cavity on a second, opposite side of the membrane. The membrane is configured to change shape such that the first sub-cavity increases in volume and the second sub-cavity decreases in volume in response to being subjected to water freezing conditions. The increase in volume accommodates an increase in volume of any water that may be trapped in the first sub-cavity when it freezes to ice.

Fluid handling assemblies are generally used to transport fluids. Such fluid handling assemblies generally include components such as pipes, tanks, valves and/or connectors that can be connected together in a system to hold, transport and divert fluid where necessary for use. Fluid handling systems are used in many different industries, such as for carrying fluids around manufacturing plants, homes and vehicles. During use, the fluid that is carried by the fluid handling assemblies may inadvertently leak into cavities defined within the assemblies that are not intended to carry fluid (e.g. between the components of the assembly and connections there between) and become trapped therein. Even if the assembly is drained or fluid is no longer flowed through the assembly, the fluid in the cavities can remain trapped therein. Often such fluids will contain a water or a water-based component. If the assembly encounters temperatures that fall to around or below the freezing point of water, then the water therein will turn to ice. It is a well-known phenomenon that the volume of the ice formed is greater than the volume of water it is formed from (the increase in volume being around 10%). This change in volume when the ice forms can fill the cavity and push against the walls/components that define the cavity. This can put harmful stress on the fluid handling assembly components and the connections there between. Over time, this stress may lead to damage of fluid handling assemblies and the fluid handling systems they are used in.
One particular example of an application where this problem is of particular concern is in the fluid handling systems of airplanes, such as a water system e.g. that stores and carries potable water for the aircraft cabin. When the airplane experiences temperatures about or below the freezing point of water for a sustained period, e.g. during a prolonged period of storage, the aforementioned harmful icing therein can occur.
It is known to provide an active heating system (e.g. heating wires) in the vicinity of fluid handling assemblies that are particularly sensitive to the harmful effects of the aforementioned icing issue. Such systems are powered and used to actively and continuously heat the assembly to keep the water trapped therein from freezing despite external/environmental temperatures. Such systems have been found to have some drawbacks. For example, they need to be continuously supplied with electrical power to function and have been known to fail or otherwise be unreliable and inefficient for solving the icing problem over longer periods of time (e.g. weeks and months). Such systems may also provide electrical "noise" that negatively interferes with other electric systems e.g. on the airplane.
Accordingly, the present disclosure aims to address these drawbacks by instead using a passive method that accommodates the expansion of any ice that may form from water trapped in such fluid handling assemblies to prevent the stress generated thereby from occurring. Other advantages and benefits of various features of the present disclosure may also be achieved, as will become apparent from the description below.
It is to be appreciated that there are also many other examples of applications where the aforementioned problem can occur, for example, in other fluid handling systems in aircrafts (e.g. chemical and hydraulic fluid handling systems), vehicles, manufacturing and domestic settings (e.g. in central heating and water systems in homes). The present disclosure accordingly extends to include all such applicable applications where the embodiments thereof can be suitably applied.

Mitigating ice build up in a fluid handling assembly


A semi-annular sleeve segment (60) is welded (78) to a drive member (24). Sleeve segment (60) presents abutment surfaces (52, 54) at its ends which upstand from the drive member (24). The abutment surfaces (52, 54) are contiguous inside surface portion (56, 58) of upper clamp parts (30, 32) that are welded to a transverse drive beam (18). The transverse drive beam (18) extends across the drive member (24). Downwardly directed recesses (34) in the upper clamp parts (30, 32) receive upper portions of the drive member (24). Lower clamp parts (36, 38), having upwardly directed recesses (40) are moved upwardly until lower portions of the drive member (24) are within the recesses (40). Bolts (48) are inserted through bolt openings (42) in the lower clamp parts (36, 38) and are then screwed into threaded openings (44) in the upper clamp parts (30, 32). Tightening of the bolts (48) moves the upper and lower clamp parts (30, 32 and 36, 38) together and moves the inner surface portions (56, 58) of the upper clamp parts (30, 32) into positions contiguous the abutment surfaces (52, 54). Movement of the drive member (24) in either direction, will move the leading abutment (52, 54) into driving contact with the contiguous surface (56, 58) on the leading clamp part (30, 32).

A number of prior art reciprocating slat conveyors are discussed in the "Background Art" section of my co-pending application Ser. No. 09/275,473, filed Mar. 24, 1999 and entitled "Drive Units and Drive Assembly For Reciprocating Slat Conveyors." One of the prior art conveyors is one that is disclosed in my U.S. Pat. No. Re.35,022, granted Aug. 22, 1995, and entitled "Reduced Size Drive/Frame Assembly For A Reciprocating Floor Conveyor." U.S. Pat. No. Re.35,022 relates to a drive assembly composed of "linear hydraulic drive units." The drive units have fixed opposite end portions connected to frame members and a movable center portion connected to one of the transverse drive beams to which the conveyor slats are connected. According to the invention of that patent, the end portions of the drive units are piston components and the movable central portion is a cylinder component. Or, the end portions are cylinder components and the movable central portion is a piston component. This latter arrangement is disclosed in some detail in my U.S. Pat. No. 5,638,943, granted Jun. 17, 1997 and entitled "Drive Assembly For Reciprocating Slat Conveyor." In either style of drive assembly, it is desirable to have the movable portions of the drive units, herein "drive members", detachably connected to the transverse drive beams. This is so the drive units can be disconnected from the drive beams and removed from the installation for servicing. The structure disclosed in U.S. Pat. No. Re.35,022 for detachably connecting the cylinder components to the drive beams comprises a pair of longitudinally spaced apart clamp assemblies, each composed of an upper clamp part that is connected to the drive beam and a removable lower clamp part. Two bolts are provided for connecting each lower clamp part to its upper clamp part. At each connection, one of the upper clamp parts forms an interlock with a structure that has been added to the movable portion of the drive unit. Conveyor assemblies sold by Hallco Manufacturing Co., Inc. of Tillamook, Oreg., under the name Hallco 4000 and Hallco 6000, have a similar connection. The Hallco drive members are piston rods that are connected to the drive beams by longitudinally spaced apart clamp structures composed of upper and lower clamp parts. One of the upper clamp parts interlocks with a structure that has been added onto the drive member.
An object of the present invention is to provide a detachable clamp connection for connecting the drive member to the drive beam in a way that utilizes both upper clamp parts for transmitting the longitudinal drive force from the drive member to the drive beam.


A semiconductor device comprising: a silicon nitride film formed on a semiconductor substrate having a first wiring layer; a first silicon oxide film formed on said silicon nitride film; and a second silicon oxide film formed on said first silicon oxide film by way of an atmospheric pressure CVD process using tetraethyl orthosilicate, siloxane, or disilazane as a source material.

1. Field of the Invention
The present invention relates to a semiconductor device and a method of fabricating the same. More particularly, the invention relates to a semiconductor device having a microstructure and a multi-layer wiring structure, and a method of fabricating the same.
2. Related Art
Multi-layer wiring structure is needed, since semiconductor devices are more highly integrated and the density of wiring lines for interconnecting elements increases. This requires an interlayer insulating film between first and second wiring layers to be made flat to prevent the disconnection of wiring lines on steps of the elements and first wiring layer. Conventionally, organic or inorganic silicon oxide coating films have been used as a flattening material, resulting in the generation of particles and cracks and the deterioration of transistor characteristics due to moisture diffusion in the film.
In recent years, a film (hereinafter referred to as "TEOS/O.sub.3 --SiO.sub.2 film") formed by way of the atmospheric pressure chemical vapor deposition (CVD) process employing O.sub.3 /tetraethyl orthosilicate (TEOS) as a source material has been attracting a great deal of attention as an interlayer film for LSIs having the micropatterns, since the TEOS/O.sub.3 --SiO.sub.2 can be formed at a low temperature below 400.degree. C. and has a selfflattening property that allows a step coverage to have a flowing shape in deposition.
The deposition rate of the TEOS/O.sub.3 --SiO.sub.2 film, however, is highly underlayer-dependent, which differs depending on materials and shapes of the underlying layer. The deposition rate is high when the underlayer is silicon and is low when the underlayer is an insulating film such as SiO.sub.2 film. Further, the deposition rate also differs depending on the flow ratio of O.sub.3 to TEOS.
In general, films deposited under a condition of high O.sub.3 /TEOS flow ratio have a higher crack-resistance, a lower moisture content in the film, and a better step coverage than those deposited under a condition of low O.sub.3 /TEOS flow ratio and provide an excellent film quality, but are disadvantageous in that they depend heavily on the underlayer. The TEOS/O.sub.3 --SiO.sub.2 film, which contains moisture, presents the problems of low reliability resulting from hot carriers and corrosion of wiring lines when used in MOS devices.
To solve the problems, Japanese Unexamined Patent Publication No. 2(1990)-209753 discloses an interlayer film of three-layer construction consisting of a plasma SiO.sub.2 film, a TEOS/O.sub.3 --SiO.sub.2 film and a plasma SiO.sub.2 film. A manufacturing process of the interlayer film is illustrated in FIGS. 6(a) to 6(c).
First, an interlayer insulating film 4 is formed over a semiconductor substrate 1 on which a gate oxide film 2 and a gate electrode 3 are formed. A first wiring layer 5 is formed on the interlayer insulating film 4, and a first silicon oxide film 7 (plasma SiO.sub.2 film) is formed so as to cover the interlayer insulating film 4 and the first wiring layer 5. Then, a TEOS/O.sub.3 --SiO.sub.2 film 8 is formed over the first silicon oxide film 7 (see FIG. 6(a)).
In turn, the TEOS/O.sub.3 --SiO.sub.2 film 8 is etched back to form a second silicon oxide film 10. A third silicon oxide film 11 (plasma SiO.sub.2 film) is formed over the second silicon oxide film 10 (see FIG. 6(b)).
The first silicon oxide film, the second silicon oxide film and the third silicon oxide film formed above the first wiring layer are subjected to an etching process to form a connecting hole therethrough. A second wiring layer is formed in the connecting hole by way of a photoresist process. Thus, a semiconductor device is fabricated (see FIG. 6(c)).
It is thought that the first silicon oxide film 7 and third silicon oxide film 11 (plasma SiO.sub.2 films) act as a barrier layer against organic substances produced when the TEOS/O.sub.3 --SiO.sub.2 film 8 is formed, and also serve to alleviate the underlayer-dependence of the TEOS/O.sub.3 --SiO.sub.2 film 8 when the first silicon oxide film 7 is 2000 .ANG. to 3000 .ANG. thick.
Japanese Unexamined Patent Publication No. 5(1993)-41459 discloses a two-layer structure consisting of a silicon nitride film formed by way of the low pressure CVD process or plasma CVD process and the TEOS/O.sub.3 --SiO.sub.2 film formed on the silicon nitride film to improve the step coverage configuration.
Japanese Unexamined Patent Publication No. 63(1988)-207168, which does not employ the TEOS/O.sub.3 --SiO.sub.2 film, discloses a three-layer structure consisting of a plasma SiN film of 200 .ANG. in thickness, a CVD SiO.sub.2 film, and an SOG (spin on glass) film to prevent moisture penetration through the plasma SiN film.
The above discussed prior art techniques present the following.
(1) Japanese Unexamined Patent Publication No. 2-209753
Where the O.sub.3 /TEOS flow ratio is low (=1), it will be understood from FIG. 2(a) that the deposition rate of the TEOS/O.sub.3 --SiO.sub.2 film on an Si wafer is generally equal to that on a flat portion (at the point A in FIG. 4) with a metal pattern, but the deposition rate of the TEOS/O.sub.3 --SiO.sub.2 film is not satisfactory. In FIG. 2(a), the open circles represent the deposition rate of the TEOS/O.sub.3 --SiO.sub.2 film on the Si wafer, and the solid circles represent the deposition rate of the TEOS/O.sub.3 --SiO.sub.2 film on the flat portion (at the point A in FIG. 4) with the metal pattern. The triangles of FIG. 2(a) represent the deposition rate on the flat portion with a metal pattern in accordance with the present invention.
Where the O.sub.3 /TEOS flow ratio is high (=7) for formation of a TEOS/O.sub.3 --SiO.sub.2 film of excellent quality, it will be understood from FIG. 2(b) that the deposition rate greatly differs between the TEOS/O.sub.3 --SiO.sub.2 film on the Si wafer and the TEOS/O.sub.3 --SiO.sub.2 film on the flat portion (at the point A in FIG. 4) with the metal pattern, failing to provide the flatness. In FIG. 2(b), the open circles represent the deposition rate of the TEOS/O.sub.3 --SiO.sub.2 film on the Si wafer, and the solid circles represent the deposition rate of the TEOS/O.sub.3 --SiO.sub.2 film on the flat portion (at the point A in FIG. 4) with the metal pattern. The low deposition rate of the TEOS/O.sub.3 --SiO.sub.2 film on the flat portion leads to decreased throughput. Further, variations in film thickness within the wafer surface cause the TEOS/O.sub.3 --SiO.sub.2 film to have different thicknesses around the point A on the wafer as shown in FIGS. 5 and 5(a), resulting in variations in thickness of the interlayer insulating film. In FIG. 5, the open circles represent the film thickness distribution on the Si wafer, and the open squares represent the film thickness distribution on the SiO.sub.2 film. It will be appreciated from FIG. 5 that the maximum film thickness on the wiring lines is about twice the minimum film thickness, and the film thickness cannot be rendered uniform.
Another problem is that moisture contained in the TEOS/O.sub.3 --SiO.sub.2 film is diffused into the gate oxide film of an underlayer transistor and field transistor by subsequent heat treatment. The moisture acting as a positively fixed charge deteriorates a resistance to hot carriers by about an order of 10 or decreases a field breakdown voltage of the field transistor.
(2) As to Japanese Unexamined Patent Publication No. 5-41459 referring to FIG. 7 of the present application, the TEOS/O.sub.3 --SiO.sub.2 film on an SiN film has a greater angle of tilt in a step portion, and accordingly is less flat than that on SiO.sub.2, failing to meet the requirements for the microstructure of devices. The data of FIG. 7 of the present disclosure is for a wiring thickness of 0.7 um, TEOS/O.sub.3 --NSG film thickness of 1.3 um, silicon nitride thickness of 500 .ANG. and a silicon oxide thickness of 1000 .ANG..
The SiN film as thin as 200 .ANG. improves surface homology. However, the thin SiN film, when used on Al wiring lines, does not function as a barrier against moisture for step coverage, and thus fails to maintain stable transistor characteristics as will be apparent from FIG. 8, in which a long relative life means a small influence of moisture in the TEOS/O.sub.3 --SiO.sub.2 film. Relative life is the ratio of hot carrier life after formation of the interlayer insulating film to hot carrier life after the first layer wiring, wherein "hot carrier life" is the time required for 10% deterioration of .beta. of a transistor.
(3) Japanese Unexamined Patent Publication No. 63-207168
A complicated wiring structure of an LSI decreases the wiring width and inevitably increases the wiring height in order to prevent an increase in the wiring resistance, resulting in an increased step. To flatten the step, it is necessary to increase the thickness of the SOG film. However, the increase in the thickness varies with the volume of the SOG film due to solvent evaporation when heated, generating cracks at the edges of the SOG film and deteriorating the film quality. Further, there arises another problem of particle generation.
The SOG film formed by way of the spin coating process is prone to cause a problem of wettability when narrow and deep gaps are coated therewith, and accordingly has not been adapted for semiconductor devices having a microstructure.
Furthermore, gases evolved from the SOG film exposed in a contact portion causes certain compounds to be formed on the surface of the wiring layer and thus increases the viahole resistance.

Semiconductor device and method of fabricating the same


In order to provide a still image reader enabling easy acquisition of high resolution image data of a desired scope, sufficiently portable and not expensive at the same time, a multi-shot still image reader of the invention comprises a position detector (11) for detecting each position of the camera unit (10) from where each of the plurality of partial images is taken; a frame for unitizing the position detector (11) and the camera unit (10) and enabling displacement of the camera unit (10) parallel to the object; and means (14) for calculating candidate vectors for each of the plurality of partial images, a correction vector giving a correct position where said each of the plurality of partial images is to be synthesized being selected among said candidate vectors.

The present invention relates to a still image reader for obtaining still image data to be processed in a computer, wherein still image data of an optional scope are synthesized with data of partial images of an object obtained by an image input device.
Image input devices applied for obtaining still image data to be processed in a computer can be grouped into two categories according to types of image sensor applied therein, electronic still cameras and image scanners.
The electronic still camera, which can take an image with one shot without any mechanical structure for scanning the object, has superiority in its portability and handiness. On the other side, unable to take image of a wide scope with sufficient resolution, there is a problem that the object size should be limited in a narrow scope for extracting necessary information thereof, with the electronic still camera. Therefore, the electronic still camera, its resolution depending on a limited number of pixels of the two-dimensional area sensor applied therein, is regarded as inadequate for obtaining image data of precise pictures such as character documents or drawings.
On the contrary, in the image scanners such as flatbed type scanners or handy type scanners, there are problems of portability and limitation of scanning size for the flatbed type scanners having a certainly large scanning mechanism, or a problem of a narrow scanning width for the handy type scanners, even though the handy type scanners have little problem of the portability. Further, problem of complicated manipulation lies in both types of the image scanners, although they are superior in resolution for obtaining image data of character documents or drawings.
Still more, after taking image data, an editing operation, or trimming, is needed for clipping a desired part from the image data, either in the electronic still camera or the image scanner.
For resolving these problems of the conventional image input devices, there have been proposed several devices applying mosaic methods, that is methods wherein image data of a necessary scope are synthesized from partial image data obtained with necessary resolution from an object divided into several parts, making use of the two-dimensional area sensor not expensive by thus compensating its limitation of scope width.
The mosaic methods applied in these devices can be classified into four types according to methods for obtaining the partial image data, as follows:
first method: synthesizing partial image data obtained with a plurality of cameras each taking a photo of each of divided parts of an object; PA1 second method: synthesizing partial image data obtained by a plurality of CCD (Charge Coupled Device) units on which an image of an object is projected through a single optical system; PA1 third method: synthesizing partial image data obtained with a camera by displacing an object; and PA1 fourth method: synthesizing partial image data obtained from an object by displacing a camera. PA1 a position detector for detecting each position of the camera unit from where each of the plurality of partial images is taken; PA1 a frame for unitizing the position detector and the camera unit and enabling displacement of the camera unit parallel to the object; PA1 a partial image memory for storing data of the plurality of partial images; PA1 means for converting said each position of the camera unit into a corresponding position of the whole image to be synthesized where said each of the plurality of partial images is to be positioned; PA1 an image attribute table for storing attribute information including the corresponding position and a correction vector thereof for each of the plurality of partial images; PA1 means for calculating candidate vectors for each of the plurality of partial images referring to characteristic of the camera unit and the position detector, the candidate vectors indicating at least probable displacement from the corresponding position to coordinates where said each of the plulrality of partial images to be synthesized; PA1 means for selecting the correction vector to be stored in the image attribute table most appropriate among the candidate vectors by positioning trials of said each of the plurality of partial images referring to said each of the plurality of partial images, the attribute information and the candidate vectors for said each of the plurality of partial images; and PA1 means for synthesizing each of the plurality of partial images into the whole image according to the attribute information for said each of the plurality of partial images.
In the first method, of which an example is described in "Acquisition of Super High Definition Pictures by Processing Stereoscopic Images" by Aizawa et al., Technical Journal IE90-54, IEICE (the Institute of Electronics, Information and Communication Engineers), partial image data of each divided part of an object are taken by each of a plurality of cameras previously arranged for the object, and they are combined into image data of a desired scope. So, there is a necessity of distortion elimination for synthesizing from the partial image data obtained by cameras each having its own optical system, in addition to difficulty of arranging and preparing the camera positions appropriately.
In the second method, an optical picture focused by a single lens is received with a plurality of two-dimensional area sensors, for obtaining desired resolution by synthesizing partial image data taken therewith, such as described in "High Speed Still Image Reader using Optically Coupled Multi Area Sensors" by Uehira, the Journal of the IIEEJ (Institute of Image Electronics Engineers of Japan), Vol. 20, No. 3 (1991), pp. 203-208, or in "A Development of a Wide Scope Mosaic CCD Camera and a Prospect of Observational Cosmology" by Sekiguchi et al., BUTSURI, Vol. 47, No. 5 (1992), pp. 376-381, the Physical Society of Japan. Having a common optical system, camera operation such as focusing or exposure setting is not so difficult in the second method compared with ordinary cameras.
In these two methods, the resolution is improved making use of a plurality of two-dimensional area sensors, and so the resolution or the scope width is restricted by the limited pixel number of two-dimensional area sensors. The problem of editing operation is also left not improved, especially in the second method with two-dimensional area sensors generally arranged in a rectangle.
According to the third or the fourth methods, the partial image data of an object can be obtained by a single camera.
In the third method, of which an example is disclosed in a Japanese patent application by Kosaka, entitled "A Still Picture Input Device and a Method of Recording and Reproducing Still Pictures" and laid open as a Provisional Publication No. 96081/'91, the object is displaced for obtaining its partial image data by a fixed camera. So, a certainly large mechanism for the object displacement hinders portability of the whole system.
The fourth method, wherein the camera is displaced for obtaining the partial image data of a fixed object such as described in "A Hand-Scan Image Digitizer with an Ability for Realtime Assembling of Mosaic Pictures" by Okada et al., Technical Journal IE81-17, IE-ICE, or in a Japanese patent application by Mizoguchi et al., entitled "Image Input Device" and laid open as a Provisional Publication No. 259557/'94, enables the user to select desired parts of the object to be input by controlling the camera displacement, resolving the problem of trading off between the resolution and the scope width together with the posterior trimming.
However, even with the fourth method, there is left a problem, in these conventional mosaic methods, that an enormous calculation is needed for synthesizing the partial image data, which is to be performed referring to information extracted therefrom by analyzing patterns thereof, resulting in a high processing cost.
Furthermore, the mosaic method is susceptible of mis-synthesizing for an object with a monotonous texture having repeated patterns. For example, partial image data 401 and 402 illustrated in FIG. 15 may be synthesized into either image data 403 or image data 404 in the mosaic method and it can not be discriminated which are representing the correct object.
Still further, when the image input device, a CCD camera for example, is displaced manually, there may arise different distortions in different partial image data such as skews, magnifications or reductions, making correct synthesizing still more difficult.
These are problems of the mosaic method.


A rail condition monitoring carriage for use on a railroad track is provided, including at least one frame movable along the railroad track, an ultrasonic rail condition monitor disposed on the at least one frame and configured for ultrasonically monitoring condition of the railroad track and transmitting the condition data to a remote location, a gage measurement device disposed on the at least one frame for monitoring a gage value of the track, collecting gage data and transmitting the gage data to the remote location, and a control system connected to the rail condition monitor and the gage measurement device for receiving the collected data and evaluating same.

The present invention generally relates to rail track inspection equipment, and more specifically to equipment for automatically monitoring the condition of railroad rails.
US railroads are subject to several different track inspection processes. First, as dictated by the Federal Railroad Administration (FRA), the railroads are required to visually inspect the rail on a regular basis. The frequency of these visual inspections is determined by the speed at which the railroad wishes trains to travel on the specific rail in question, also known as the Class or Classification of the track. For Class 4 and 5 track, the railroad is required to traverse the rail (by foot or on a hy-rail vehicle) twice weekly, with at least one calendar day intervals between tests. As is known in the art, a hy-rail vehicle is a standard truck equipped for travel along railroad track, with a set of hydraulically operated rail-type wheels mounted to the front and rear of the vehicle.
In addition to visual track inspections required by the FRA, a frequent, periodic search for internal defects must be conducted for all rails in Classes 4 through 5 tracks. The practice of searching for internal flaws is known as rail flaw detection using Non Destructive Testing techniques such as Ultrasonic Testing.
Current standard practice for rail flaw detection utilizes a process that is referred to as stop/start testing (SST). A custom SST rail flaw detection vehicle outfitted with real time on screen displays travels along the track looking for rail defects. At least one on-board operator interprets the on screen results and determines when to stop and verify that a defect exists. Testing frequency along the track is typically scheduled by the railroad based on predetermined risk management guidelines. The railroads balance the cost of increased test frequency versus the reduction of service failures (an interruption in revenue service) and derailments. In practice, railroad test frequencies typically far exceed the requirements by the FRA. However, for railroads, the cost of purchasing, maintaining and staffing and/or subcontracting conventional customized rail flaw detection vehicles prevents their widespread use, and accordingly limits the coverage and/or frequency of track monitoring.
Another drawback of conventional SST testing is that the typical ultrasonic system installation onto a testing vehicle involves a complex collection of cable wiring, ultrasonic signal cables, water plumbing, pneumatic air lines, and hydraulic hose, all of which need to be run and managed throughout the testing vehicle. This integration is time consuming and problematic for field service.

Rail condition monitoring system with carriage


A conching apparatus having: a container, which forms an accommodating space for a product mass, a shaft, which is accommodated, at least in part, in the container and is designed to rotate about its longitudinal axis, and at least one conching tool, which is coupled to the shaft for joint rotation therewith, the conching tool therefore, during conching operation of the conching apparatus, moving in a first direction of circulation along a circulatory path. The conching tool here includes an operative surface, which is directed towards the inner wall of the container and is designed such that a radial gap between the inner wall of the container and the operative surface decreases, at least in part, counter to the first direction of circulation. The invention also relates to a method for conching a product mass.

A conching device (also referred to as conche) is a device for processing a food product mass, in particular, in the chocolate production. Raw materials, such as, for example, cocoa mass, sugar, cocoa butter and/or milk powder, can be mixed by means of such a device and can be processed by the person of skill in the art in the known manner by exerting compression and/or shear forces. The latter is generally also referred to as conching and serves the purpose, inter alia, of discharging moisture and thus substances comprising unwanted properties, such as, for example, acetic acids or aldehydes.
The conching is an important process step, which can decisively determine the quality and the flavor of the end product. It is further a comparatively time-intensive process step, which is characterized by a correspondingly high energy demand.
It has been shown that a desired product quality cannot always be achieved with the known devices and methods, in particular when this is to take place in an efficient and energy-saving manner.

Conching device and method for conching a product mass


The invention relates to a clean up bag, more particularly to a plastic bag that has a plastic glove which is heat sealed to one interior side of the bag. The glove has two thumbs so that it may be used by either left handed or right handed individuals. The bag is covered with a cut-resistant fabric such as Kevlar, and has a padding of fibrous material on the outside of the bag which absorbs any liquid surrounding or contained in the waste to be picked up. The bag also has a draw string closure on the top which pulls from either side. The bag is turned inside out once the waste has been cleaned up, and the draw strings used to close the bag for disposal.

U.S. Pat. No. 4,964,188 to Olson, entitled "Clean Up Device", (the entire disclosure of which is hereby incorporated herein by reference) discloses a clean up device which includes a glove which is heat-sealed to the inside of a plastic bag. The plastic bag is used to pick up waste, and in particular animal excrement. This glove allows easy manipulation of the bag so that the excrement may be easily picked up. The glove prevents the bag from slipping around on the hand. Further, the outside of the bag has padded material mounted to the surface of the bag. This padding material helps absorb any moisture contained in the excrement so that the excrement does not slip around when the user is picking it up. Further, the padding serves as an insulator so that the user does not feel the texture or heat of the excrement.
The present invention is a further development of the device disclosed in the Olson '188 patent. The invention is particularly adapted for the clean up and disposal of hazardous, infectious and toxic wastes.


A magneto-optical disc system and a medium used therewith are disclosed in which a magneto-optical disk having a magneto-optical recording layer on one major surface with a protective film formed on said magneto-optical recording layer, on which a magnetic head is slid, and an optical system having a focus servo mechanism on the other surface. The focus servo mechanism of the optical system satisfies a certain condition to avoid any focal blank.

The present invention relates to a magneto-optical disc system for recording information, sliding a magnetic head along a magneto-optical disc, and also relates to the magneto-optical disc used for such a system.
The basic theory of a magneto-optical recording system is that the temperature of a part of a magnetic thin film is raised to a point exceeding the Curie point or the temperature compensating point, so that coercive force of this portion is extinguished, thereby reversing the direction of magnetization into a direction of recording magnetic field applied from outside. This magneto-optical recording system is being utilized in external recording apparatus of an optical file system or a computer and also recording apparatus for sound and image signals, etc.
A typical magneto-optical disc used for this magneto-optical recording system has a magnetization facilitating axis on a transparent substrate which consists of a polycarbonate etc. in a direction perpendicular to a film side, and forms a recording unit by laminating a magneto-optical recording layer (for example, rare earth-transition metal alloy amorphous thin film) having a large magneto-optical effect, a reflective layer, a dielectric layer, etc., thereby irradiating with laser light from the transparent substrate for reading the signals.
Meanwhile, in general, in said magneto-optical recording system an optical system for irradiating with laser light and a magnetic head impressing a magnetic field are both arranged distantly from a magneto-optical disc. However, when a magnetic field modulation system is employed, sliding the magnetic head along the magneto-optical disc is more useful for low magnetic field recording.
This is based on the following reasons. With the magnetic head impressing a high-speed reversal magnetic field, only a very small magnetic field can be generated because of various restrictions. Therefore, the magnetic head needs to be brought as close to the magnetic recording layer as possible, and it is difficult to control the amount of surfacing of the magnetic head minutely and with high precision.
However, in sliding the magnetic head along the magneto-optical disc, problems such as a focal blank (so-called defocusing) caused by a projection of the magneto-optical disc surface are created.
Namely, when the magnetic recording layer of the magneto-optical disc is covered with a protection film consisting of ultraviolet-ray hardened resin etc., the magnetic head is to slide along the protection film of this magneto-optical disc.
On the other hand, the said protection film is formed by techniques such as spin coat, wherein with the viscosity of ultraviolet-ray hardened resin being high, a bubble tends to remain in the film, causing defects such as a projection.
If the magnetic head slides along the protection film surface having such a projection, the magnetic head will collide with the projection, causing bending (displacement) of the disc and magnetic head jump.
Bending and magnetic head jump will cause a focal blank and shortage of external magnetic field, respectively, thereby disturbing normal recording/reproduction.
In order to solve said problem, all discs having a projection generated with a bubble may be eliminated. However, it is not realistic because of possible deterioration of manufacturing yield.

Magneto-optical disc system and magneto-optical disc


A system for displaying images is provided. A capacitor type digital-to-analog converter is coupled between a first node and a second node and generates a first analog signal according to a digital signal with N bit data. An analogue buffer is coupled between the second node and a third node and generates a second analog signal according to the first analog signal and a bias voltage. A first switch is coupled between a predetermined voltage and the second node. A second switch is coupled between the first node and the third node. A third switch is coupled between the third node and an analog output signal. The second switch is turned on and the third switch is turned off when the first switch is turned on, and the first and second switches are turned off when the third switch is turned on.

1. Field of the Invention
The invention relates to a digital-to-analog converting circuit, and more particularly to a digital-to-analog converting circuit with an analogue buffer and a capacitor type digital-to-analog converter.
2. Description of the Related Art
In image displaying systems, such as thin film transistor liquid crystal displays (TFT-LCD) fabricated by low temperature poly-Si (LTPS) technology, the bit number of a digital signal is increased due to higher resolution and gray scale. However, for application of the digital signal with higher bits, using a resistor type digital-to-analog converting circuit will greatly expand the circuit layout area. Therefore, one solution is to use the resistor type digital-to-analog converting circuit together with a capacitor type digital-to-analog converting circuit. For example, a 10-bit resistor type digital-to-analog converting circuit is re-designed to a 5-bit resistor type digital-to-analog converting circuit with a 5-bit capacitor type digital-to-analog converting circuit, or a 3-bit resistor type digital-to-analog converting circuit with a 7-bit capacitor type digital-to-analog converting circuit, thus reducing layout area.
FIG. 1 shows a conventional capacitor type digital-to-analog converting circuit 100 with an analogue buffer. The digital-to-analog converting circuit 100 comprises a capacitor type digital-to-analog converter 110 and a source follow type analogue buffer 120. The source follow type analogue buffer 120 has an active load 122 and a storage capacitor 124, which is used to compensate for an output voltage. The source follow type analogue buffer 120 can decrease the charge time and variations caused by device characteristics, and increase the input voltage range. However, during a compensation period of the source follow type analogue buffer 120, a capacitor 112, which is an equivalent capacitor of all the capacitors within the capacitor type digital-to-analog converter 110, is coupled to the storage capacitor 124. Due to the coupling, the capacitor 112 influences the voltage distribution within the storage capacitor 124, such that an incorrect voltage is stored in the storage capacitor 124, thus causing distortion of the output voltage.


A process of using a transparent overlay device with a resin for repairing a small hole in a pipe includes applying an adhesive resin to a transparent overlay; applying the adhesive resin to a pipe surface over a hole and curing the adhesive resin through the application of a light source.

1. Field of the Invention
The invention relates to a method of utilizing a transparent overlay device and visible light to apply and form radiation cured adhesive resins while they ate being cured. The methods include application of radiation cured adhesive resins to various types and shaped surfaces, such as dry surfaces, wet surfaces, underwater surfaces, curved surfaces and surfaces affected by extreme temperatures.
2. Description of the Prior Art
When adhesive resins are applied to a surface, they often are mechanically pushed onto the intended surface with tools such as putty knives, fingers or the tip of a tube of resin. This may be effective for areas with high surface energies or where gravity and external forces maintain the pressure of the adhesive onto the intended surface. However, when working on wet surfaces or on surfaces with low surface energies, there is a significant functional improvement to adhesive strength if an overlay material is used to ensure the adhesive is held onto the intended surface until it is functionally cured.
A need exists for a versatile method of promoting rapid curing of adhesive resins to surfaces while applying pressure to maintain the adhesive resins in place during the curing process and keeps oxygen from reaching the adhesive resins during free radical polymerization curing. The present invention provides such a method.

Method of applying a radiation cured resin with a transparent, removable overlay