A semiconductor integrated circuit device includes an SDRAM module operating in synchronization with a clock signal, a logic circuit transmitting data with the SDRAM module for effecting necessary processing, a direct memory access circuit taking in and transferring an externally applied signal in synchronization with the clock signal corresponding to an operation clock of the SDRAM module, and a selector selecting either the output signal of the logic circuit and the output signal of the direct memory access circuit in accordance with a test mode instructing signal for application to the SDRAM module. A test of a synchronous memory can be performed by externally making fast and direct access to the synchronous memory without an influence of a skew in a signal.

1. Field of the Invention
The present invention relates to a semiconductor integrated circuit device containing a large capacity memory such as a DRAM (Dynamic Random Access Memory) and a logic circuit such as a processor, which are integrated on a common semiconductor substrate, and in particular relates to a semiconductor integrated circuit device containing a synchronous memory operating in synchronization with a clock signal and a logic circuit in an integrated form. More particularly, the invention relates to a structure for externally testing the synchronous memory.
2. Description of the Background Art
Recently, a DRAM-embedded logic semiconductor integrated circuit device, in which a logic circuit such as a processor (which will be referred to merely as a "logic circuit" hereinafter) and a DRAM having a large storage capacity are integrated on a common chip (semiconductor substrate), has been developed. In this DRAM-embedded logic semiconductor integrated circuit device, it is possible to reduce a length of an interconnection line between the logic circuit and the DRAM, and a parasitic capacitance and a resistance of the interconnection line can be made small so that signals and data can be transmitted fast. Since the logic circuit and the DRAM are mutually connected only through internal interconnection lines, there is not restriction on the number of pin terminals. Therefore, a data bus width can be made wider to increase a bit width of data to be transferred, and therefore fast data transfer is allowed.
In the DRAM-embedded logic semiconductor integrated circuit device, only the logic circuit is coupled to the pin terminals through pads. Therefore, if functions of the embedded DRAM are to be tested, the test must be conducted through the logic circuit. In this case, however, the logic circuit performs the control for the test, and therefore a burden on the logic circuit increases. Also, the test must be performed in such a manner that an instruction for a function test of the DRAM is externally applied to the logic circuit, the logic circuit applies a control signal for the function test to the DRAM, and the result of the test is read out through the logic circuit. Thus, the function test of the DRAM is conducted through the logic circuit, and accurate tests of an operation timing margin of the DRAM and others cannot be performed. Also, the number of test patterns generated by the logic circuit is restricted due to a program capacity or the like so that the test cannot be conducted sufficiently, and it is impossible to determine the reliability of the DRAM with high accuracy. Accordingly, it becomes necessary to test externally and directly the DRAM through a dedicated test device.
FIG. 24 schematically shows a whole structure of a DRAM-embedded logic semiconductor integrated circuit. In FIG. 24, a DRAM-embedded logic semiconductor integrated circuit device (which will be referred to merely as a "semiconductor integrated circuit device" hereinafter) 900 includes a DRAM module 902, a logic circuit 904 which accesses data of DRAM module (macro) 902 and performs predetermined processing in accordance with an externally applied instruction or an embedded program, and a select circuit which selects either I/O nodes of logic circuit 904 or testing pads TPa, - - - , TPb, TPc, - - - and TPd for electrically connection to DRAM module 902 in accordance with a test mode instructing signal TE applied through a test pad 907. Logic circuit 904 is externally supplied with data or a signal through pads LPa, LPb, LPc, - - - , LPd, LPe, - - - and LPf. Generally, the semiconductor integrated circuit device 900 is provided with pads arranged along the periphery of the chip. FIG. 24 shows only some of the pads.
Select circuit 906 electrically connects testing pads TPa-TPb and TPc-TPd to DRAM module 902 when test mode instructing signal TE applied through pad 907 is active. DRAM module 902 includes a plurality of memory cells, a memory cell select circuit and a control circuit for the memory cell select circuit. In the structure shown in FIG. 24, DRAM module 902 can be externally and directly accessed by activating test mode instructing signal TE, for testing DRAM module 902 in accordance with a test program which has been conventionally used.
FIG. 25 shows a specific structure of the semiconductor integrated circuit device shown in FIG. 24. In FIG. 25, DRAM module 902 includes a data input node WD receiving write data of a 256-bit width, a control signal input node CD receiving a control signal, an address signal input node AD receiving an address signal of a 16-bit width, and a data output node RD supplying data of a 256-bit width.
For the test, there are provided a write data input pad WPD receiving write data of a 8-bit width, a control signal input pad CPD receiving a control signal, an address input pad APD receiving an address signal of 16 bits, a read data pad RPD receiving read data of an 8-bit width, and a data select address input pad SPD receiving an address signal for selecting data of 8 bits from the data of a 256-bit width read from DRAM module 902.
For write pad WPD, there is provided a distributing circuit 908 which extends the externally applied write data of 8 bits to test data of 256 bits. For read data pad RPD, there is provided a select circuit 909 for selecting data of 8 bits from data of 256 bits in accordance with an address signal for data selection applied from data select address pad SPD.
Select circuit 906 includes a switching circuit 906w selecting either the write data of 256 bits from logic circuit 904 or the write data of 256 bits from distributing circuit 908, a switching circuit 906c selecting the control signal from logic circuit 904 and the control signal from control signal input pad CPD, a switching circuit 906a for selecting one of the address signal of 16 bits from logic circuit 904 and the address signal of 16 bits from address input pad APD, and a switching circuit 906r for transmitting the data of 256 bits read from DRAM module 902 to one of logic circuit 904 and select circuit 909.
Connection paths of these switching circuits 906w, 906c, 906a and 906r are determined by test mode instructing signal TE. An operation of the semiconductor integrated circuit device shown in FIG. 25 will be described below with reference to FIG. 26.
Select circuit 906 connects pads CPD, APD and RPD to DRAM module 902 in accordance with activation of test mode instructing signal TE. Upon writing of data, an address signal A0 is applied to address input pad APD, and a write instructing signal (WRITE) instructing data writing is applied to control signal input pad CD. Write data WD0 is applied to write data input pad WPD. Distribution circuit 908 extends the write data to a data of 256 bits. The address signal, control signal and write data reach DRAM module 902 with a delay due to delays at internal interconnection in es extending from the pads, distribution circuit 908 and select circuit 906. Therefore, skews occur in the signals arriving at input nodes AD, CD and WD of DRAM module 902. When the signals arrive to DRAM module 902 and the signals on input node WD, CD and AD of DRAM module 902 are made definite, data writing is performed in DRAM module 902.
When data reading is to be performed, address signal A1 is applied to address input pad APD, as is done in the data writing, and a data read instructing signal (READ) is applied to control signal input pad CPD. Skews likewise occur on input nodes AD and CD of DRAM module 902 when address signal and control signal arrive at DRAM module 902 and are made definite. When the read instruction is applied, selection of the memory cell is performed in DRAM module 902 in accordance with address signal A1, and data RD1<0:255> of 256 bits appears on read data output node RD. When this read data appears, an address RDSA1 for data selection is applied to data select address input pad SPD. Due to an interconnection line delay between pad SPD and select circuit 909, a skew occurs in the data select address applied to node SD of select circuit 909 until it is defined. When data select address RDSA1 is definite on node SD of select circuit 909, data RD1<0:7> of 8 bits in 256 bits is selected and applied to read data output pad RPD. When the data reading is performed subsequently, read data from DRM module 902 changes so that a skew occurs on read data output node RD of DRAM module 902, and a skew likewise occurs on read data output pad RPD.
FIG. 26 shows that write data WD1 and WD2 are applied to write data input pads WPD even in the data read operation, only for clearly showing that a skew likewise occurs in the write data on write data input node WD of DRAM module 902. In the data read operation, it is not necessary to apply the write data to write data input pad WPD. Even if write data is applied, DRAM module 902 ignores the data applied to write data input node WD in data reading mode (by disabling the write data input buffer and write driver).
As shown in FIG. 26, the signals applied to the pads reach the corresponding nodes of DRAM module 902 through paths having different electrical characteristics, so that the definition timings shift due to interconnection line delays and the changed in bit numbers when the signals change, and skews occur.
DRAM module 902 takes in the address signal in accordance with the applied control signal, and allows the data access. An operation cycle for the test performed by externally and directly accessing DRAM module 902, which in turn takes in the address signal merely in synchronization with the control signal, is determined by a period from change in address signal applied to address input pad APD to the next change. DRAM module 902 selects a memory cell in accordance with the address signal which keeps a definite state for a period shorter than this operation cycle. Since the operation cycle of such DRAM module 902 is relatively long, the above skew occupies a short period in the operation cycle, and the influence exerted by this skew on the operation of the DRAM module can be substantially ignored.
Recently, such synchronous memories have been used that perform input/output of data and take in externally applied signals in synchronization with a clock signal different from the control signal. For example, input/output of data synchronized with a clock signal such as a system clock makes a data transfer speed equal to the speed of the clock signal. Since externally applied signals are taken in based on the clock signal, it is not necessary to give consideration to the shift (skew) in timing between external signals so that the internal circuits can start the operation at a faster timing, which allows fast access. A synchronous DRAM (SDRAM) is one of such kinds of synchronous memories. If this SDRAM is used in place of the DRAM module shown in FIG. 24 for data transfer between the logic circuit and the memory, the SDRAM module can operate in accordance with the clock signal so that it is possible to implement a DRAM-embedded logic semiconductor integrated circuit device capable of faster operation. In this case, a function test must be externally performed on the embedded SDRAM module (macro) for ensuring the reliability. For this, DRAM module 902 in the structure shown in FIG. 25 may be replaced with the SDRAM module.
FIG. 27 schematically shows a structure of a main portion of the SDRAM-module embedded logic semiconductor integrated circuit device. In FIG. 27, select circuit 906 which selects a signal transmission path in accordance with test mode instructing signal TE is arranged between an SDRAM module 910 and a logic circuit 912. Since SDRAM module 910 operates in synchronization with the clock signal, the clock signal is applied from logic circuit 912. During a test, SDRAM module 910 is externally supplied with a clock signal through a pad CKPD. Select circuit 906 includes a switching circuit 906ck for selecting one of the clock signal from logic circuit 912 and the clock signal from pad CKPD. Structures other than the above are the same as those shown in FIG. 25, and corresponding portions bear the same reference numerals.
SDRAM module 910 takes in signals applied to nodes WD, CD and AD in synchronization with clock signal CLK applied to its clock input node CKD, and outputs data from read data output node RD in synchronization with the clock signal. The operation of the semiconductor integrated circuit device shown in FIG. 27 will be described below with reference to a timing chart of FIG. 28.
In a test mode operation, test mode instructing signal TE is activated, and select circuit 906 isolates SDRAM module 910 from logic circuit 912 and sets SDRAM module 910 to a state allowing external access thereto through a pad. The clock signal applied to clock input pad CKPD is applied to clock input node CKD of SDRAM module 910 through select circuit 906. The clock signal applied to pad CKPD is merely applied to clock input node CKD of SDRAM module 910 with a delay.
The address signal is applied to address input pad APD in every clock cycle of the clock signal which in turn is externally applied to pad CKPD. The address signal applied to input pad APD has a plurality of bits, and a transition timing of each bit is different from the others so that a skew is present in the address signal reaching address input node AD of SDRAM module 910.
The control signal applied to control signal input pad CPD is applied to control signal input node CD of SDRAM module 910, and a skew likewise occurs when the state of the control signal changes. Since both the write operation instructing signal and read operation instructing signal change, consideration must be given on both the worst and best cases of the change (transition) timings of both the signals. Likewise, the write data applied to write data input pad WPD is 8-bit data, and is extended to 256 bits by distribution circuit 908, and is applied to SDRAM module 910 through select circuit 906, resulting in a skew. A skew likewise occurs in the address signal.
Address input pad APD is supplied with an address signal which is in the definite state at the rising of clock signal applied to clock input pad CKPD. SDRAM module 910 takes in the applied signal at the rising edge of clock signal applied to clock input node CKD. Therefore, it takes in address signal A1 applied in cycle #0 of the clock signal, which in turn is applied to clock input pad CKPD, in accordance with the data read instructing signal (READ) applied to control signal node CD, and the data reading is performed.
In SDRAM module 910, a memory cell is internally selected in accordance with this address signal A1. SDRAM module 910 has a structure similar to that of a conventional SDRAM, and a period which is called a column read latency (CAS latency) CL is required until the data is actually output after the data read instruction is applied. FIG. 28 shows the data read operation in the case where column read latency CL is 1. Therefore, data RD1<0:255> of the memory cell designated by this address signal A1 is made definite in cycle #1 of the clock signal applied to clock input pad CKPD. Data output node RD of SDRAM module 910 is coupled to select circuit 909 through select circuit 906r, and a skew occurs in the read data due to a load capacitance of this path. In cycle #1 of the clock signal applied to clock input pad CKPD, an address for data selection is applied to pad SPD, and select circuit 909 selects and outputs 8-bit data RD1<0:7> in accordance with a data select address RDSA1 applied to node SD.
In cycle #1 of the clock signal applied to clock input pad CKPD, the data read instruction is applied again, and next data is read in accordance with applied address signal A2. In cycle #2 of the clock signal applied to clock input pad CKPD, next data is likewise read in accordance with applied address signal A3. For the next read instruction, a data select address RDSA2 is applied, and next read data RD2<0:7> is read out. In this case, the selecting operation in select circuit 90 causes a skew in the read data applied to pad PRD.
FIG. 28 shows a state that write data WD1, WD2, WD3 and WD4 are also successively applied to write data input pad WPD in the data read operation. This is for clearly showing that a skew occurs in the write data transmitted to SDRAM module 910 when the write data changes. Even if the write data is applied during the data reading, SDRAM module 910 performs data reading in accordance with the read instruction, and does not perform the data writing so that no malfunction occurs. This is also true in such a case that an address RDSA for selecting the read data is applied during the data writing.
As shown in FIG. 28, the operation cycle of SDRAM module 910 is determined by the cycle of the clock signal applied to control signal input pad CKPD. This clock signal is a fast clock signal. Therefore, a proportion of the skew to the clock cycle in SDRAM module 910 is larger than that in asynchronous DRAM shown in FIGS. 24 and 25 even if the time widths of skews are equal to each other. SDRAM module 910 takes in externally applied data in synchronization with the rising edge of the clock signal applied to clock input node CKD, or outputs the data in synchronization with the same clock signal. If the skew is large, therefore, signals cannot be taken in accurately, and instructed operations cannot be performed accurately. If the skew is large, a period for which the signal applied to each input node of SDRAM module 910 is valid decreases. Therefore, an external test device must be operated under consideration of this skew caused when the operation mode instructing signal changes, and the clock cycle period effectively decreases, resulting in such a problem that fast external test of the SDRAM module is impossible.
In the SDRAM module shown in FIG. 28, the burst length (the number of data which is successively written/read per one data I/O node when data write/read instruction is applied) is one. However, even if the burst length is more than one, select circuit 909 shown in FIG. 27 performs the selecting operation during data reading. Therefore, a skew occurs in the read data, because the read data at node SPD changes at every clock cycle.
Column read latency CL can be changed in accordance with the clock cycle period of SDRAM module 910 because the time required for data reading is constant independently of the clock cycle.
FIG. 29 shows a data read operation with column read latency CL of 3. With column read latency CL of 3, SDRAM module 910 takes in the data read mode instruction together with the address signal in accordance with the clock signal applied to clock input node CLKD, and data RD1<0:255> of the addressed memory cell will be made definite after elapsing of 3 clock cycles. In cycle #3 of the clock signal applied to clock input node CKD of SDRAM module 910, the data is output.
When column read latency CL is changed, it is therefore necessary to apply externally the address signal for data selection to pad SPD in accordance with this changed column read latency, and it is necessary to change the timing of applying the address signal for data selection in accordance with the value of column read latency CL, resulting in disadvantageous increase in load on an external test device.
Therefore, a fast test cannot be performed if an SDRAM module operating in synchronization with a fast clock signal, is employed together with a structure for externally testing a clock-asynchronous DRAM module, which in turn takes in the address signal merely in accordance with signals /RAS and /CAS.

Clock synchronous memory embedded semiconductor integrated circuit device

Mitsubishi Electric Engineering Company Limited


A multipurpose bottle and cap combination comprises a bottle for containing a fluid, a neck with an opening through which the fluid may flow, and a bottom. A cap is secured to the neck of the bottle by threaded engagement, and controls the flow of the fluid through the cap. A first massaging device comprising a plurality of curved surfaces terminating in a tip are provided on the cap, and a second massaging device comprising a plurality of rounded protrusions are spaced apart on the bottom of the bottle.

1. Field Of The Invention
The present invention relates to a multipurpose bottle and cap combination which may be used to contain perfume, powder, cosmetic products, medicines or other aromatic fluids and which is provided with at least two different types of massaging devices which may be used to effect at least two different types of massages.
2. Description Of The Related Art
There are currently bottles which are made specifically for containing powder, perfume or other aromatic fluids, such as air refreshener and cologne bottles. Many of these bottles are made of different shapes to provide the desired aesthetic appeal, and are also made from different materials; for example, plastic, glass, or crystals. However, all of these bottles are only made specifically for containing such powder and fluids. An individual may often times wish to carry these bottles in a bag for use in public places, and often finds such bottles to be quite bulky and, in some cases, heavy. Depending on the shape of the bottle which is often designed for aesthetic appeal and not to provide stability, the bottle may be unstable and may topple when resting on a flat surface. Further, the caps of such bottles are not always tightly secured so that the powder, perfume or fluid may leak or escape from the bottle.
There are a number of ways of performing acupressure massage. Such massages are most commonly given by masseurs or masseuses, who administer acupressure massage by using their fingertips to apply appropriate pressure to the localized pressure points in a person's body. Such application of pressure creates a warmth which is converted into a minute electrical charge. This charge feeds the muscles, nerves and lymphatic system and clears the meridians that are blocked. This increases blood and energy circulation between these pressure points. However, the masseur must accurately exert sufficient pressure on the pressure points via his or her fingertips to stimulate the pressure points to achieve a soothing and comfortable massage. Moreover, most masseurs accompany the massage with the application of powder, oils, or other lotion, many of which contain a pleasing and soothing aroma.
Massages may also be administered manually by an individual through the use of massaging devices. There are currently massaging devices which may be carried by an individual for use. For example, a round stick with a short handle is often used. The stick is often blunt and imprecise for applying the needed and accurate pressure. Such a device cannot create a wave pattern on the skin to achieve a soothing massage. In addition, some of these massaging devices are not provided with proper handles so that the individual often has difficulty firmly gripping the device when administering the massage. Moreover, it is often desirable that the massage be accompanied by a soothing aroma such as that emitted by perfume or herbal fluids.
Thus, there is a need for a bottle and cap combination which an individual may conveniently carry with him or her, the bottle capable of containing and effectively sealing powder, perfume or aromatic fluids and having a plurality of massaging devices provided thereon to effectuate different forms of massage.

Multipurpose bottle and cap with massaging devices


An authentication method and system provides an improved authentication scheme. The authentication scheme can be flexibly applied for authenticating various classes of users for access to information having various levels of security or sensitivity. One method includes receiving a request from a user for a portal content component. In response, an authenticator determines whether the user has satisfied a previous authentication requirement for the portal that is equal to or greater than an authentication requirement for the portal content component. If so, the requested portal content component is rendered. Accordingly, the disclosed approach conserves valuable authentication resources.

The following description relates to computing environment security methods and systems.
Security mechanisms are widely employed in computing environments to inhibit access by a user to computing resources until after the identity of the user has been authenticated. One type of authentication mechanism includes a single sign-on (SSO) security process. Typically, an SSO process requires a user to provide one or more pieces of validating data in a single sign-on interface in a display. Once authenticated, the user gains access to computing resources, usually for the entire course of a computing session.
Conventional SSO processes, however, lack the granularity of "pluggability," that is, implementation of such processes are generally designed for a global software environment and not for specific applications or content. Accordingly, many applications or content in a computing environment usually have the same authentication requirements despite different security requirements. For instance, one application may provide access to content that is more confidential than content accessible by another application.
Ordinarily, web applications have a certain flow during logon, e.g. first check for a SSO token, and if not present, display a logon screen for authentication against the user master source. This flow might be sufficient for ordinary users, but some special users may require access to special context where strong authentication with SSL and mutual authentication is required. Several examples could be a manager that accesses sensitive human resource (HR) data, or administrator that needs access to administrative components of a web portal. The fact that some content needs stronger protection does not only mean that the set of authorized persons is restricted; it also means that authentication must be more difficult to fake or eavesdrop.
Additionally, different users may have different security requirements. For example, a user may have access to applications and content through a role-based enterprise portal, also known as their "workplace." If each user requires unique access requirements, an enterprise, particularly the larger ones, would have to create an corresponding large number of different workplaces and associated authentication requirements, and identify and code the workplace requirements for each user. More than ever, enterprises need to identify and create authentication mechanisms for their computing systems that can be generic yet still meet the enterprise's varied security and access objectives.


A multi-application connector includes a mating connection module including an electrical insulating terminal holder, a conducting terminal set and a metal shield and configured subject to a first predetermined electrical connector standard, and an adapter module configured subject to a second predetermined standard and including an electrical insulating terminal holder detachably insertable into the mating connection module, a signal terminal set electrically connectable to the conducting terminal set of the mating connection module and a metal shield surrounding a front tongue block of the electrical insulating terminal holder and signal terminal set of the adapter module.

1. Field of the Invention
The present invention relates to electrical connectors, and more particularly to a multi-application connector, which includes a mating connection module configured subject to a first predetermined electrical connector standard for the connection of an external mating electrical connector, and an adapter module configured subject to a second predetermined standard and detachably connectable to the mating connection module.
2. Description of the Related Art
Following fast development of computer electronic technology, many high mobility electrical and electronic apparatus are well developed and widely used by people for different applications, bringing convenience to people and making people's life more comfortable. Further, high-speed, high-power and sophisticated mobile electrical and electronic devices and related products with large capacity and low profile characteristics have been continuously created. Further, many different transmission interfaces and connectors are widely used in electrical and electronic products for power and data transmission. For connecting different component parts, different transmission interfaces or connectors of different sizes and configurations must be used. Therefore, an electrical or electronic device needs to provide sufficient installation space for the installation of different types of transmission interfaces and connectors.
Further, it is the market trend to create mobility electronic apparatuses having light, thin, short and small characteristics. In consequence, circuit board electronic components must be made extremely strong, small and precise. Further, many different male and female electrical connectors are used in an electronic apparatus to connect different components and parts to a circuit board for the connection of mating electronic cards and/or connectors. These electrical connectors occupy much circuit layout space of the circuit board and the inside space of the electronic apparatus. It is quite important to fully utilize the circuit layout space of a circuit board and the internal space of an electronic apparatus.


In one embodiment, an apparatus for reading data from a data storage medium includes a processor and logic integrated with and/or executable by the processor, the logic being configured to: read data from a data storage medium, the data including a plurality of data sets, determine that an error condition is detected for a data set read from the data storage medium, determine whether the data set was read from the data storage medium using multiple cut and paste (C/P) error recovery procedure (ERP) (C/P ERP Multi), and when the data set was read from the data storage medium using C/P ERP Multi: continue reading data from the data storage medium normally when the detected error condition has been overcome using C/P ERP Multi; otherwise, continue using C/P ERP Multi to read data from the data storage medium until the error condition is overcome.

The present invention relates to data storage, and more particularly, to reading data from tape selectively using single and/or multi-cut and paste (C/P) reconstructive error recovery procedure (ERP) which relies on a history of error to reduce backhitches during error burst scenarios.
Tape and optical storage devices use very powerful error correction codes, such as product codes or concatenated codes, in conjunction with interleaving to provide a very high degree of data integrity. These error correction schemes typically use two error correction codes (ECCs) as component codes. Two important burst-error performance measures for tape storage systems protected by these schemes are: 1) lateral width of an erroneous stripe which is still capable of being corrected (this is also known as "broken track correction" capability), and 2) longitudinal width of an erroneous stripe that is still capable of being corrected. A "broken" track generally refers to a track that cannot be read correctly due to a problem on the media itself and/or a problem with the readback channel, e.g., as a channel that does not detect data correctly because of alignment or some systematic problem with the head.
Magnetic tapes may store data in the form a "data sets" or files. Each data set is encoded using interleaved sets of codewords that are organized into an ECC-encoded matrix of size M bytes×N bytes (M×N) and then written to tape as shown in FIG. 1, according to the prior art. There are two levels of encoding within this matrix 150. The first level of encoding utilizes the matrix rows 102. Each row 102 of the matrix contains C1-ECC row parity 106, which adds p-bytes of C1-ECC to the n-bytes of user data (e.g., N=n+p bytes). The second level of encoding, C2-ECC column parity 108, adds q-bytes of C2-ECC to each matrix column 104. For example, if q=12, then adding 12 bytes of C2-ECC would add 12 rows to the matrix 150 (e.g., M=m+q bytes).
However, many temporary errors may occur during reading of the data (data sets) from the tape media. One such condition is called a "temp burst" or "error burst" (comprising a plurality of errors or temporary errors within a predetermined distance on the magnetic tape). Under an error burst condition, a tape drive may not be able to correct all errors encountered while reading the data from the tape in a predetermined amount of time, and reports these errors as one or more permanent errors. For example, when the data set is read from the tape in a high error rate condition, C1/C2 ECC is not capable of correcting the read data. For example, in some approaches, C1-encoding is capable of correcting 10 bytes of error, and C2-encoding is capable of correcting 20 bytes of error. If the error bytes exceed this correction power, then data cannot be read from the tape. In this scenario, the tape drive will then attempt ERP to read the data set from the tape again with a different hardware setting (e.g., changing the tape speed). ERP repeats until C1/C2-encoding is able to correct the data or until the ERP retry count exceeds a threshold. If the retry count exceeds the threshold, then the tape drive will report a permanent error for the read operation.
When an error burst is encountered while reading data from the magnetic tape, there are several different methods of attempting to handle the error burst. One method is "Reconstructive Error Recovery Procedure (ERP) Using Reserved Buffer," which is described in more detail in U.S. patent application Ser. No. 13/676,477, filed Nov. 14, 2012, which has been incorporated by reference. This method uses a reconstructive ERP to reduce backhitches during error burst scenarios, and is referred to herein as C/P ERP Single.
Another such method is referred to as an "Iterative Cut and Paste Error Recovery Procedure" (C/P ERP Multi), which is described in more detail in U.S. patent application Ser. No. 13/676,493, filed Nov. 14, 2012, which has been incorporated by reference. This method attempts to solve burst reading errors for a tape drive reading a magnetic tape. However, the C/P ERP Multi uses a dedicated buffer area of a predetermined size, which is allocated regardless of other performance concerns (such as whether the tape drive has detected an error burst or not). Therefore, this usage of the dedicated buffer causes performance degradation for normal reading.
C/P ERP Multi typically utilizes a ring buffer of a type known in the art. The tape drive has a buffer memory which is divided and allocated to each segment and is referred to as a ring buffer because data is stored in the buffer from a starting point to an end point, and when more data needs to be stored, the starting point is again utilized (possibly overwriting data already stored therein). A tape drive reads/writes the data from/to magnetic tape media in units referred to as data sets and stores each data set into each segment. Segments are filled from top to bottom and back to top, repeatedly.
C/P ERP Multi improves performance under an error burst condition; however, the procedure utilizes a portion of the reserved buffer area. The procedure divides the ring buffer into two portions and uses one of these portions for storing data during the C/P ERP Multi procedure. The other portion of the ring buffer remains accessible by the tape drive for normal operation (reading/writing). As a result, the normal or typical ring buffer size is reduced and the ordinary streaming read performance (read performance that is possible when no error burst occurs) is degraded.
The two methods of C/P ERP (single cut/paste or multi-cut/paste) are available to conventional tape drives and must be selected by the tape drive before reading data. The drive must examine dynamic recovery performance criteria to determine which technique, C/P ERP Multi or C/P Single, will be the more effective choice. In configuring the drive for C/P ERP Multi operation, the drive may choose a buffer segmentation ratio based on dynamic performance criteria. Dynamically allocating a ring buffer is described in more detail in U.S. patent application Ser. No. 13/943,674, filed Jul. 16, 2013, which has been incorporated by reference.
However, in a typical tape drive, there is no ability to intelligently choose between C/P ERP Single and C/P ERP Multi when reading data from a medium, and instead the tape drive reacts to error burst conditions.

Single and multi-cut and paste (C/P) reconstructive error recovery procedure (ERP) using history of error correction

International Business Machines Corporation


A semiconductor device where an outside connection terminal of a semiconductor element and an electrode of a wiring board are connected to each other via a conductive adhesive, the conductive adhesive includes a first conductive adhesive; and a second conductive adhesive covering the first conductive adhesive; wherein the first conductive adhesive contains a conductive filler including silver (Ag); and the second conductive adhesive contains a conductive filler including a metal selected from a group consisting of tin (Sn), zinc (Zn), cobalt (Co), iron (Fe), palladium (Pd), and platinum (Pt).

As electronic devices such as mobile phones or digital cameras have high functionality and small sizes, higher functions and higher integration are in demand for semiconductor devices provided in the electronic devices. Accordingly, recently, a semiconductor element such as a integrated circuit chip being directly mounted on a wiring board has been suggested so that the mounting area is made small and efficient use is achieved.
More specifically, in the semiconductor device, a semiconductor integrated circuit element (hereinafter "semiconductor element") is mounted on a wiring board by using convex (projection) outside connection terminals called wire bumps. Insulating resin such as glass epoxy resin is used for a base part of the wiring board. Conductive layers made of copper (Cu) or the like are selectively provided on a main surface of the wiring board. The convex (projection) outside connection terminals provided on a main surface of the semiconductor element are connected to the conductive layers of the wiring board. Outside connection terminals such as spherical electrode terminals are provided on surfaces of electrodes selectively formed on another main surface of the wiring board. In the above-mentioned semiconductor device, the semiconductor element is mounted on the wiring board in a so-called flip-chip (face-down) state. The above-mentioned flip-chip mounting structure is formed by the following methods.
In a first method, when a semiconductor element is mounted on a wiring board, an underfill material such as a thermosetting adhesive is supplied on a main surface of the wiring board in advance. While the semiconductor element is mounted on the wiring board via the underfill by applying high loads so that the underfill material is spread, the underfill material is made to flow across in the entire surface area of the semiconductor element by capillary action. At the same time, the underfill material is cured by heat applied at the time when the semiconductor element is mounted.
In the first method, since the high loads are applied to the semiconductor at the same time that the underfill material is cured, the convex shaped outside connection terminal of the semiconductor element and the electrode of the wiring board are crushed against each other so as to be connected to each other.
In this pressure connecting type first method, connection of the convex shaped outside connection terminal of the semiconductor element and the electrode of the wiring board is maintained by using a contractive force for curing the underfill material by heat and a repulsive force when the convex shaped outside connection terminal of the semiconductor element is crushed, so as to make electric connection between the convex shaped outside connection terminal of the semiconductor element and the electrode of the wiring board.
In a second method, a conductive adhesive made of, for example, silver (Ag) paste is transferred to the head end of the convex shaped outside connection terminal. The convex shaped outside connection terminal of the semiconductor device and the electrode of the wiring board are connected to each other via the conductive adhesive. Then, an underfill material is applied in the vicinity of the external circumference of the semiconductor element on the wiring board. The underfill material is made to flow across the entire surface area of the semiconductor element by capillary action and is cured by heating.
It is general practice to use, as the above-mentioned conductive adhesive, silver (Ag) or a mixture or an alloy containing silver (Ag) as a main ingredient. Silver (Ag) has a low volume resistivity and low contact resistance with gold (Au) forming the convex shaped outside connection terminal of the semiconductor element.
Japanese Patent No. 3409957 describes an example where two kinds of conductive adhesives are used for a connecting part of an electrode of a wiring board and an electrode of a semiconductor element. More specifically, a structure of a projection electrode of an IC chip mounted on the wiring board in a face-down manner is suggested in Japanese Patent No. 3409957. A first conductive adhesive made of a conductive filler of silver palladium (AgPd) is transferred to the projection electrode and a second conductive adhesive made of a conductive filler of silver (Ag) is transferred to the outside of the first conductive adhesive. A thin semiconductor device having good electric properties can be easily formed by flip chip mounting using such a method.
However, as the semiconductor device has high level functions, the pitch of the convex shaped outside connection terminals becomes narrow so that the size of the convex shaped outside connection terminals become small.
In this pressure connecting type first method, high loads are applied to the semiconductor element at the same time when the underfill material is cured so that the convex shaped outside connection terminal of the semiconductor element is crushed. However, since the semiconductor element is more solid than the wiring board, a curve whose top part is situated substantially in the center of the wiring board may be formed in the wiring board where the semiconductor element is flip-chip mounted. As a result of this, a gap in a vertical direction between the semiconductor element and the wiring board becomes narrow in an area other than an area where electric connection of the semiconductor element and the wiring board is formed by the electrode and the convex shaped outside connection terminal becomes narrow.
Because of this, a particle generated during a manufacturing process of the semiconductor device enters in the underfill material positioned in the gap in the vertical direction between the semiconductor element and the wiring board so that a circuit of the semiconductor element may be broken.
If the load applied when the semiconductor element and the wiring board are connected to each other so that the gap in the vertical direction between the semiconductor element and the wiring board is made wide, a force for connecting the convex shaped outside connection terminal of the semiconductor device and the electrode of the wiring board may be degraded so that shorts between the semiconductor element and the wiring board may be generated. In other words, if the pressure connecting type first method is applied to flip chip mounting of the semiconductor element where the convex shaped outside connection terminals are formed with a narrow pitch on the wiring board, a connection limit may be generated where the connection between the semiconductor element and the wiring board is released.
In addition, in a case where a test having a heat history such as a reflow test or a temperature cycle test is performed, due to stress caused by thermal expansion based on differences of thermal expansion coefficients of the semiconductor elements, the wiring board, the underfill material, the conductive adhesive, and others, the connection of the semiconductor element and the wiring board may become loose and a short between the semiconductor element and the wiring board may be generated.
In the above-discussed second method, the semiconductor element, where the conductive adhesive of silver (Ag) paste is transferred on the head end of the convex shaped outside connection terminal, is mounted on the wiring board so that the convex shaped outside connection terminal of the semiconductor element and the electrode of the wiring board are connected to each other. Accordingly, a connection part where the convex shaped outside connection terminal of the semiconductor element and the electrode of the wiring board are connected to each other is a low elasticity body.
Accordingly, in a case where the test having a heat history such as a reflow test or a temperature cycle test is performed, although the connection between the semiconductor element and the wing board is not loosened, ion migration, where silver (Ag) contained in the conductive adhesive is ionized due to an electric field or environment and eluted in the periphery, may be easily generated. In particular, if the pitch of the convex shaped outside connection terminals becomes narrow and a large amount of silver (Ag) exists in the connection part where the convex shaped outside connection terminals of the semiconductor element and the electrodes of the wiring board are connected to each other, the shorts due to the ion migration between the semiconductor element and the wiring board may be easily generated.
Furthermore, in the example discussed in Japanese Patent No. 3409957, since the second conductive adhesive made of silver (Ag) conductive filler is formed on the outermost circumferential part of the projection electrodes, it is difficult to avoid generation of the above-mentioned silver ion migration.

Semiconductor device and manufacturing method of the semiconductor device


The present application discloses a lithium ion secondary battery comprising a positive electrode plate, a negative electrode plate, a separator and an electrolyte, wherein the positive electrode plate comprises a positive electrode current collector and a positive electrode film provided on at least one surface of the positive electrode current collector, and the positive electrode film comprises a first positive electrode active material represented by chemical formula Li1+xNiaCobMe1-a-bO2-yAy and a second positive electrode active material represented by chemical formula Li1+zMncN2-cO4-dBd; the positive electrode plate has a resistivity r of 3500 Ω·m or less; and the electrolyte comprises a fluorine-containing lithium salt type additive. The lithium ion secondary battery provided by the present application is capable of satisfying high safety performance, high-temperature storage performance and cycle performance simultaneously.

Lithium-ion secondary batteries can provide stable voltage and current, have a high-voltage platform, high specific energy, and a wide temperature range, and are environmentally friendly and easy to carry, which have become a mainstream power source of various consumer electronics and electric products. Lithium ion secondary batteries with a ternary system positive active material have characteristics of large discharge capacity and high energy density, and thus are a very potential lithium ion secondary battery. However such lithium ion secondary batteries have a disadvantage of poor safety performance. As the application range of lithium ion secondary batteries becomes wider and wider, people have also put forward higher and higher requirements to safety performance of lithium ion secondary batteries. Therefore how to make lithium ion secondary batteries having a higher energy density while also keeping a higher safety performance has been becoming an urgent felt technical problem to be solved.

Contemporary Amperex Technology Co., Limited


An apparatus and method for performing channel estimation in an OFDM (Orthogonal Frequency Division Multiplexing) system using multiple antennas, and a method for performing channel estimation using received sub-carriers in an OFDM system for receiving a sub-carrier having a training symbol and another sub-carrier having no training symbol comprising the steps of: a) differently setting a weight associated with a reliability of the sub-carrier having the training symbol and a weight associated with a reliability of the sub-carrier having no training symbol, b) measuring channel estimation errors associated with individual received sub-carriers, and c) performing channel estimation using the measured channel estimation errors and the set weights.

1. Field of the Invention
The present invention relates generally to a mobile communication system for transmitting data using a plurality of transmission/reception antennas, and more particularly to an apparatus and method for accurately performing channel estimation at a plurality of reception antennas.
2. Description of the Related Art
Signals transmitted over a wireless channel are affected by a multi-path interference caused by various obstacles existing between a transmitter and a receiver. A wireless channel having multiple paths has a maximum delay spreading characteristic and a maximum signal transmission period characteristic. If the signal transmission period is longer than the maximum delay spreading time, there is no interference between successive signals, and a frequency area characteristic of a channel is set to a frequency nonselective fading. However, in a high-speed transmission system for transmitting data using a wideband signal, the signal transmission period is shorter than the maximum delay spreading time, such that signal interference between successive signals, and thus a received signal, is affected by intersymbol interference. In this case, the frequency area characteristic of the channel is set to a frequency selective fading. A single-carrier transmission method using a coherent modulation scheme utilizes an equalizer to remove such intersymbol interference. The higher the data transmission speed, the greater the signal distortion caused by the intersymbol interference. The greater the signal distortion, the higher the equalizer's complexity. An OFDM (Orthogonal Frequency Division Multiplexing) system has been recently proposed to solve the aforementioned problem of the equalizer for use in the single-carrier transmission method.
Typically, an OFDM scheme is defined as a two-dimensional access scheme for combining a TDM (Time Division Access) technique with an FDM (Frequency Division Access) technique. Therefore, when transmitting data using the OFDM scheme, individual OFDM symbols are separately loaded on sub-carriers, and are thus transmitted over predetermined sub-channels.
The OFDM scheme has superior spectrum efficiency because sub-channel spectrums are orthogonal to each other while being overlapped with each other. The OFDM scheme enables a modulation/demodulation unit to be implemented with an effective digital configuration because an OFDM modulation/demodulation is implemented with an IFFT (Inverse Fast Fourier Transform) and a FFT (Fast Fourier Transform). Further, the OFDM scheme is very well adapted to a current Europe digital broadcasting transmission and a high-speed data transmission prescribed in a high-capacity wireless communication system standard, for example, an IEEE 802.11a, an IEEE 802.16a, or an IEEE 802.16b, etc.
The OFDM scheme, serving as an MCM (Multi-Carrier Modulation), converts a serially-entered symbol stream into a parallel symbol stream, modulates the parallel symbol stream into a plurality of sub-carriers orthogonal to each other, and transmits the plurality of sub-carriers.
Such an MCM system was first applied to a high-frequency wireless communication for use in the military in the late 1950s, and an OFDM scheme for overlapping between a plurality of orthogonal sub-carriers was first studied in the late 1970s. This OFDM scheme must implement an orthogonal modulation between multiple carriers, resulting in limited system application. However, it was known that a modulation/demodulation based on the OFDM scheme can be effectively processed using a DFT (Discrete Fourier Transform), and many developers have conducted intensive research into the OFDM scheme. Using a guard interval and a method for inserting a cyclic prefix guard interval are well known to those skilled in the art, such that negative influence on a system affected by a multiple-path and a delay spread is greatly reduced. Therefore, the OFDM scheme is widely applied to digital transmission technology, for example, DAB (Digital Audio Broadcasting), digital TV, a W-LAN (Wireless-Local Area Network), and a W-ATM (Wireless Asynchronous Transfer Mode). More specifically, although the use of the OFDM scheme has been limited due to its hardware complexity, the OFDM scheme can be implemented with digital signal processing technology such as a FFT and an IFFT. The OFDM scheme is similar to a conventional FDM (Frequency Division Multiplexing) scheme, but it can obtain optimum transmission efficiency during high-speed data transmission because it transmits a plurality of sub-carriers orthogonal to each other. Further, the OFDM scheme has superior frequency use efficiency and is very resistive to a multi-path fading, which results in an optimum transmission efficiency during high-speed data transmission. Particularly, because the OFDM scheme uses an overlapped frequency spectrum, it can effectively use a frequency, is very resistive to a frequency selective fading and a multi-path fading, reduces an intersymbol interference using a guard interval, and provides an equalizer composed of simple hardware. Also, the OFDM scheme is very resistive to an impulse noise, such that it is widely used in communication system architecture.
FIG. 1 is a block diagram of a conventional mobile communication system based on an OFDM scheme. Referring to FIG. 1, an input bit, which is a binary signal, is applied to a channel encoder 100. The channel encoder 100 codes input bits, and outputs coded symbols. The coded symbols are applied to a S/P (Serial/Parallel) converter 105. The S/P converter 105 converts received serial-coded symbols into parallel-coded symbols, and transmits the parallel-coded symbols to a modulator 110. The modulator 110 maps the received coded symbols with a symbol-mapping constellation, and outputs mapped symbols. There are a variety of modulation schemes for use in the modulator 110, for example, a QPSK, a 8PSK, a 16QAM, a 64QAM, etc. The number of bits contained in the symbols is prescribed according to individual modulation schemes. The QPSK modulation scheme is composed of 2 bits, the 8PSK modulation scheme is composed of 3 bits, the 16QAM modulation scheme is composed of 4 bits, and the 64QAM modulation scheme is composed of 6 bits. Modulated symbols generated from the modulator 110 are applied to an IFFT unit 115. The IFFT-modulated symbols generated from the IFFT unit 115 are applied to a P/S (Parallel/Serial) converter 120, and the P/S converter 120 outputs serial-format symbols. The serial-format symbols are transmitted over a transmission antenna 125.
The symbols transmitted from the transmission antenna 125 are received at a reception antenna 130. Symbols received at the reception antenna 130 are converted into parallel-format symbols over the S/P converter 135. The parallel-format symbols are transmitted to a FFT unit 140. A reception signal received at the FFT unit 130 performs an FFT process, and is then applied to a demodulator 145. The demodulator 145 has a symbol mapping constellation to the same as that of the modulator 110, and converts despreading symbols into binary-bit symbols according to the symbol mapping constellation. That is, the demodulation scheme is determined by the modulation scheme. Binary symbols demodulated by the demodulator 145 are used for channel estimation by a channel estimator 150. The channel estimator 150 estimates various conditions created when the transmission antenna 125 transmits data, resulting in an effective data reception. The binary symbols for performing channel estimation using the channel estimator 150 are converted into serial-format symbols over the P/S converter 155, and are then decoded by a decoder 160. The binary symbols applied to the channel decoder 160 are decoded and thus binary bits are generated from the channel decoder 160.
FIG. 2 is a block diagram of a mobile communication system for transmitting/receiving data according to an OFDM scheme using a plurality of transmission/reception antennas. However, prior to describing the above mobile communication system, a mobile communication system for transmitting/receiving data using one transmission/reception antenna will hereinafter be described in more detail.y(n)=x(n)h(n)+n(n)  [Equation 1]
With reference to the Equation 1, y(n) is data received at a time "N" over a reception antenna, x(n) is data transmitted at a time "N" over a transmission antenna, h(n) is an index of a transmission channel environment influence of data generated from the transmission antenna at a specific time "N", and n(n) is a noise created at the time "N". The influence of the noise will herein be omitted for the convenience of description of the present invention.
As shown in the Equation 1, a reception end must previously know the value of h(n) to obtain correct data. For this purpose, a transmission/reception end of a mobile communication system transmits previously-known data in such a way that the value of h(n) can be recognized. This previously-known data is called a training symbol. Provided that the value of h(n) is recognized, a reception end of the mobile communication system can correctly recognize data transmitted from the transmission end.
As illustrated in FIG. 2, each of a plurality of transmission antennas 220, 222, and 224 transmits data using a plurality of sub-carriers having a specific frequency. The plurality of sub-carriers are assigned to the plurality of transmission antennas 220, 222, and 224 in the OFDM-based mobile communication system using a plurality of transmission/reception antennas.
Modulators 200, 202, and 204 modulate received symbols, and transmit the modulated symbols to the IFFT units 210, 212, and 214. The IFFT units 210, 212, and 214 IFFT-modulate the received symbols, and transmit IFFT-modulated symbols over individual transmission antennas 220, 222, and 224. Data transmitted over the transmission antennas 220, 222, and 224 is received at reception antennas 230, 232, and 234. The data received at the reception antennas 230, 232, and 234 is FFT-modulated at FFT units 240, 242, and 244, and is then transmitted to demodulators 250, 252, and 254. Channel estimators 260, 262, and 264 perform channel estimation on symbols demodulated at the demodulators 250, 252, and 254.
Individual reception antennas 230, 232, and 234 receive data transmitted from each of the transmission antennas 220, 222, and 224. In more detail, the reception antenna 230 receives data transmitted from the transmission antennas 220, 222, and 224, the reception antenna 232 receives data transmitted from the transmission antennas 220, 222, and 224, and the reception antenna 234 receives data transmitted from the transmission antennas 220, 222, and 224.
Individual sub-carriers having a specific frequency allocated to the transmission antennas are allocated to different transmission antennas. If the number of allocatable sub-carriers is "A" and the number of transmission antennas is "B"; an A/B number of sub-carriers is generally allocated to one transmission antenna for transmission of the training symbol.xp(n)=[0 . . . 0x1px2p . . . xNap0xNa+1p. . . x2Nap0 . . . 0]T  [Equation 2]
Sub-carriers allocated to an OFDM-based mobile communication system are represented in the Equation 2. With reference to the Equation 2, xp(n) is a training symbol transmitted at a N-th time from a P-th antenna in the OFDM-based system having K carriers. The training symbol is a symbol recognized at a transmission/reception end of the system to perform channel estimation, is loaded on a sub-carrier having a specific frequency, and is then transmitted. As shown in the Equation 2, all the sub-carriers are not allocatable, but only some sub-carriers from among all sub-carriers are allocatable. A center carrier and both-ends carriers having a DC component are not allocated to the transmission antennas 220, 222, and 224. Therefore, the number of sub-carriers allocatable to the training symbol is 2Na. Provided that the number of transmission antennas is Nt, sub-carriers for transmission of Nc training symbols are allocated to one transmission antenna.2Na=NcNt  [Equation 3]
Therefore, training symbols are allocated to individual transmission antennas, and the allocated training symbols are transmitted over sub-carriers.
                                                                        x                i                p                            =                              {                                                                                c                        i                                                                                i                        =                                                                                (                                                              m                                -                                1                                                            )                                                                                N                              t                                                                                +                          p                                                                                0                                                              otherwise                                                                                0                ≤                p                ≤                                                      N                    t                                    -                  1                                            ,                              1                ≤                i                ≤                                                      N                    c                                                                          N                    t                                                                                [                  Equation                                                              4                ]
where xip is a training symbol included in the pth training symbol group, Nt is the number of antennas or the number of training symbol groups, ci is an arbitrary complex of a magnitude ∞{square root over (Nt)}, m is an integer lower than Nc, and Nc is number of training symbols allocated to one transmission antenna.
When three transmission antennas are applied to the Equation 4, FIG. 3 is a view illustrating training symbols transmitted over these three transmission antennas. Referring to FIG. 3, individual transmission antennas do not transmit data in a virtual carrier area and a DC carrier area. Individual transmission antennas load the training symbols on the sub-carriers of a specific frequency according to the Equation 4, and then transmit the training symbols loaded on the sub-carriers. If the number of the training symbols having a specific frequency is 12, a first transmission antenna transmits a first training symbol, a fourth training symbol, a seventh training symbol, and a tenth-training symbol. A second transmission antenna transmits a second training symbol, a fifth training symbol, an eighth training symbol, and an eleventh training symbol. A third transmission antenna transmits a third training symbol, a sixth training symbol, a ninth training symbol, and a 12-th training symbol. A group of the training symbols transmitted at a specific time over individual transmission antennas is called a training symbol group. The training symbol group is applied to individual modulators illustrated in FIG. 2, but it will hereinafter be described in connection with a transmission antenna.
The training symbols transmitted over several transmission antennas are received at a plurality of reception antennas over individual transmission paths (i.e., channels). Individual reception antennas receive training symbols received from the transmission antennas. Therefore, one reception antenna must estimate status information of a channel for transmitting the training symbols over the transmission antennas.
TABLE 1TransmissionTransmissionTransmissionTransmissionantenna 1antenna 2antenna 3antenna NReceptionh11h21h31hN1antenna 1Receptionh12h22h32hN2antenna 2Receptionh13h23h33hN3antenna 3Receptionh1Mh2Mh3MhNMantenna M
Table 1 indicates channel estimation values to be measured at individual reception antennas for receiving training symbols from transmission antennas. The value of h11 is a channel estimation value measured at a reception antenna 1 using a training symbol received from the transmission antenna 1. The value of hNM is a channel estimation value measured at a reception antenna M using a training symbol received from the transmission antenna N. Various values created at specific time points are shown in the Table 1. The channel estimation values may be denoted by a two-dimensional matrix. The channel estimation values denoted by such a two-dimensional matrix at a specific time are called a spatial channel matrix. As shown in the Table 1, one reception antenna must measure channel estimation values associated with a plurality of transmission antennas. The channel estimation values measured by a specific reception antenna measure the training symbols several times to reduce the influence of noises. In this case, individual transmission antennas transmit a training symbol group composed of the same training symbols to the reception antennas.
TABLE 2Trans-missionTransmissionTransmissionTransmissionantenna 1antenna 2antenna 3antenna NT1TrainingTraining symbolTraining symbolTraining symbolsymbolgroup 2group 3group Ngroup 1T2TrainingTraining symbolTraining symbolTraining symbolsymbolgroup 2group 3group Ngroup 1T3TrainingTraining symbolTraining symbolTraining symbolsymbolgroup 2group 3group Ngroup 1T4TrainingTraining symbolTraining symbolTraining symbolsymbolgroup 2group 3group Ngroup 1
With reference to the Table 2 above, the specific transmission antenna transmits the same training symbol group to the reception antennas to measure channel estimation values. It should be noted that the training symbol group is not one training symbol, but is composed of a plurality of training symbols having a specific frequency according to Equation 4.
Individual reception antennas receive training symbol groups transmitted from transmission antennas, and perform channel estimation on the basis of the values of the received training symbols. The reception antennas repeatedly perform the channel estimation. A channel estimation value correctly measured at the reception antennas is obtained from only a specific-frequency carrier having a training symbol loaded from the transmission antennas. Other channel estimation values of sub-carriers associated with a specific frequency unloaded from the transmission antenna cannot be recognized at the reception antennas.
In a system having three transmission antennas and 12 sub-carriers, a first transmission antenna from among the three transmission antennas loads a training symbol on a first sub-carrier, a fourth sub-carrier, a seventh sub-carrier, and a tenth sub-carrier. The reception antenna receives the first sub-carrier, the fourth sub-carrier, the seventh sub-carrier, and the tenth sub-carrier from the first transmission antenna, and measures channel estimation values of individual channel paths using the received sub-carriers. However, it is impossible for the reception antenna to perform channel estimation on a second sub-carrier, a third sub-carrier, a fifth sub-carrier, a sixth sub-carrier, an eighth sub-carrier, a ninth sub-carrier, an 11-th sub-carrier, and a 12-th sub-carrier.
In order to solve this problem, recently an interpolation method for estimating channels of sub-carriers having no training symbol using channel estimation values of other sub-carriers having training symbols has been proposed. However, in this case, a training symbol is not allocated to an edge sub-carrier area, which results in an ineffective interpolation method and an increased channel estimation error. FIGS. 4A˜4B illustrate channel estimation results using a conventional interpolation method. Referring to FIGS. 4A˜4B, training symbols are transmitted over four transmission antennas, and channel estimation error increases at both-edge sub-carrier areas. Therefore, a need exists for a method for performing accurate channel estimation even in a sub-carrier area having no training symbol.

Apparatus and method for performing channel estimation in an orthogonal frequency division multiplexing (OFDM) system using multiple antennas


An apparatus for providing deceleration rate information of a user operating a vehicle is disclosed. The apparatus includes a unit including an accelerometer, a processor, and a lighting mechanism. The processor receives from the accelerometer deceleration info of the vehicle and variably adjusts at least one aspect of the lighting mechanism, thereby quantitatively signaling the deceleration rate to a driver of a following vehicle. The unit may be mounted on an article of clothing, a bag, or the vehicle itself.

1. Field
The present disclosure relates to an indicator apparatus that flashes at a frequency correlating to the rate of deceleration, thereby quantitatively signaling a deceleration rate to a driver of a following vehicle. This apparatus is designed to be used in addition to conventional brake lights. The disclosure exploits the awareness of the accepted meaning of flashing lights as well as improved visibility to provide a safer signaling system.
This relates to braking lights, specifically to a vehicle application that informs a following vehicle of a deceleration rate of the user's vehicle. This apparatus is especially beneficial for motorcycle riders and bicyclists who are especially vulnerable and tend to be less visible. Motorcycle brake lights tend to be small and lower to the ground. In addition, motorcyclists use engine braking more than drivers of other types of vehicles. In one embodiment of the disclosure, a motorcycle jacket includes a deceleration rate indicator apparatus having a lighting mechanism that serves as a running light as well as deceleration indicator. The embodiment provides added advantage such that it will be higher up than a light mounted on a motorcycle. This added visual cue improves the visibility of the riders. The deceleration rate indicator apparatus may take on any appropriate shape or configuration, such that users may proudly display their favorite logo, emblems, or advertisement while making them more visible.
Braking indication by measuring deceleration rate complements the monitoring application of brakes, as the apparatus measures actual deceleration instead of application of brakes. This provides user the ability to inform the following vehicle of the degree of danger involved. This provides extra time for following drivers to react as braking is usually preceded by releasing throttle or shifting down in many cases. The specification of this apparatus centers around the application of motorcycle jacket but its application can also be extended to the vehicle itself or other apparel and or accessories.
2. Description of Prior Art
The following table some prior art that appears relevant:
Pat. No.TitleIssue DatePatenteeU.S. Pat. No. 2,474,610Quantitative deceleration indicatorJun. 28, 1949Elton P WunschU.S. Pat. No. 6,925,654Safety Signal Jacket for riders ofAug. 09, 2005Shelton Gamini De Silvanon-enclosed vehicles.U.S. Pat. No. 6,679,615Lighted signaling system for userJan. 20, 2004Raliegh A. Spearingof vehicleUS2007/0063831Signaling safety systemMar. 22, 2007Barry Perkinds, JosephCordinaU.S. Pat. No. 6,525,652Downshifting warning systemFeb. 25, 2003Clayton S. SmithU.S. Pat. No. 6,943,677Modulated Intensity Flasher forSep. 13, 2005Clyde H Boyer, Edward J.Vehicle Brake Light with LockoutStropkay, Robert C. MorrisU.S. Pat. No. 4,918,424Two-stage brake light systemApr. 17, 1990R Douglas Sykora

This patent is subject to a terminal disclaimer.


Medical device balloons are formed from a tubular parison by a process or apparatus which establishes a controlled location (initiation zone) on the parison where radial expansion is initiated. Initiation within the initiation zone is achieved by heating the parison in that location to a higher temperature than the remainder of the parison for at least a portion of the blowing time. A variety of apparatus configurations are provided, some of which allow for the size and location of the initiation zone to be readily reconfigured. Balloons can also be modified, post-blowing, using heating apparatus and methods described.

Medical devices comprising catheter shafts and catheter balloons are used in an increasingly widening variety of applications including vascular dilatation, stent delivery, drug delivery, delivery and operation of sensors and surgical devices such as blades, and the like. The desired physical property profile for the balloons used in these devices vary according to the specific application, but for many applications a high strength robust balloon is necessary and good softness and trackability properties are highly desirable.
Commercial high strength balloons having wall strengths in excess of 20,000 psi, have been formed of a wide variety of polymeric materials, including PET, nylons, polyurethanes and various block copolymer thermoplastic elastomers. U.S. Pat. No. 4,490,421, Levy, and U.S. Pat. No. 5,264,260, Saab, describe PET balloons. U.S. Pat. No. 4,906,244, Pinchuk et al, and U.S. Pat. No. 5,328,468, Kaneko, describe polyamide balloons. U.S. Pat. No. 4,950,239, Gahara, and U.S. Pat. No. 5,500,180, Anderson et al describe balloons made from polyurethane block copolymers. U.S. Pat. No. 5,556,383, Wang et al, and U.S. Pat. No. 6,146,356, Wang et al, describe balloons made from polyether-block-amide copolymers and polyester-block-ether copolymers. U.S. Pat. No. 6,270,522, Simhambhatla, et al, describes balloons made from polyester-block-ether copolymers of high flexural modulus. U.S. Pat. No. 5,344,400, Kaneko, describes balloons made from polyarylene sulfide. U.S. Pat. No. 5,833,657, Reinhart et al, describes balloons having a layer of polyetheretherketone. All of these balloons are produced from extruded tubing of the polymeric material by a blow-forming radial expansion process. U.S. Pat. No. 5,250,069, Nobuyoshi et al, U.S. Pat. No. 5,797,877, Hamilton et al, and U.S. Pat. No. 5,270,086, Hamlin, describe still further materials which may be used to make such balloons.
A variety of blow forming techniques have been utilized. The extruded parison may be radially expanded as is into a mold or by free-blowing. Alternatively, the parison may be pre-stretched longitudinally before expansion or reformed in various ways to reduce thickness of the balloon cone and waist regions prior to radial expansion. The blowing process may utilize pressurization under tension, followed by rapid dipping into a heated fluid; a sequential dipping with differing pressurization; a pulsed pressurization with compressible or incompressible fluid, after the material has been heated. Heating may also be accomplished by heating the pressurization fluid injected into the parison. Examples of these techniques may be found in the patent documents already mentioned or in U.S. Pat. No. 4,963,313, Noddin et al, U.S. Pat. No. 5,306,246 Sahatjian, U.S. Pat. No. 4,935,190, Tennerstedt, U.S. Pat. No. 5,714,110, Wang et al, U.S. Pat. No. 5,304,340, Downey.
Following blow-forming the balloons may be simply cooled, heat set at a still higher pressure and/or temperature or heat shrunk at an intermediate pressure and/or temperature, relative to the blow forming temperature and pressure. See U.S. Pat. No. 5,403,340, Wang et al. EP 540858, Advanced Cardiovascular Systems, Inc.; and WO 98/03218, Scimed Life Systems.
In commonly owned copending US application published as US 2003-0167067 A1, Wang et al., incorporated herein by reference, it is disclosed that improved balloon properties can be obtained by controlling the parison extrusion in a manner which restricts the elongation of the parison material in the longitudinal direction.
U.S. Pat. No. 5,714,110, Wang et al., describes a method for forming a catheter balloon comprising the steps of placing tubing of a thermoplastic material in a mold and blowing the balloon by pressurizing and tensioning the tubing while gradually dipping the mold into a heated heat transfer media so as to sequentially blow the first waist, the body and the second waist portions of the balloon, the tubing being subjected to a relatively lower pressure while the body portion is blown than while the first and second waist portions are blown.
In commonly owned copending U.S. application Ser. No. 10/617,428, filed Jul. 7, 2003, Schewe, et al, entitled "Medical Device Tubing With Discrete Orientation Regions", methods of forming extruded tubular polymeric segments with a varied orientation or elongation along the length thereof are disclosed.
In U.S. Pat. No. 6,572,813, Zhang et al, an apparatus is described in which a mold form is heated by mechanically moving one or more external heaters along the outside of a balloon mold containing a tubular parison. The document states that the temperature of the parison, along the effective length of the mold should be kept within a specified minimum difference, for instance 100° C. and preferably within 20° C. That is, a relatively non-uniform heating apparatus is controlled to provide a more uniform heating. In this respect the system is understood to merely mimic heating behaviour of well known balloon molding systems, for instance those in which mold forms are dipped into a heated liquid bath and those in which a block heater surroundingly contacts the mold.
In mass production of medical device balloons, some processes produce substantial rejection rates. Parison shaping techniques going beyond simple axial stretching and radial expansion of straight tubes tend to increase balloon rejection rates. Grinding or necking down ends of a parison may have such an effect. Nevertheless, shaped parisons are often needed, for instance to allow large diameter balloons to be fashioned with high burst strength and/or for mounting on small diameter catheters. A free-blowing step in a balloon forming process can also display such problems.
Process improvements in the balloon forming art which minimize rejection rates are desirable both for the direct reduction in manufacturing cost and for the reduced likelihood that a defective balloon will escape inspection. Consequently there is ongoing need for process improvements in the medical balloon forming arts.

Process for forming medical device balloons


Material for the paving of rinks suitable for skating with blade-skates, of synthetic type, characterized in that it exhibits a chemical composition gradient between the upper skating surface (A), consisting of hydrocarbons having a melting point of 30.degree.-130.degree. C., and the innermost surface (B) consisting of polymers having high mechanical properties and low brittling point.

As is known to those skilled in the field, the blade-skate skating dynamics requires that the skating surface be substantially grooved by the skate blades in order to balance the centrifugal forces generated during the movements which are typical of this sport. Thus it is indispensable that the sheeting regains the original smoothness after a certain time of use.
The smoothness of an ice surface is restorable by means of melting at relatively low costs. However, excepted the territories having a particularly cold climate, and in such territories during the warmer season, the maintenance of vast frozen surfaces involves very high investments and fixed maintenance expenses.
Owing to the above, skating rinks have been studied, which are made of synthetic materials such as Teflon (polytetrafluoroethylene), polyethylene, mixtures which include linear polyesters, the purpose being to reduce the initial investment and fixed maintenance expenses with respect to ice rinks, where ice is formed and maintained by means of cryogenic plants.
However, the surface of said materials, once it is worn out by skating, can only be restored by mechanical removal (by means of milling) of the worn out layer.
In particular, the polyethylene rinks, although they are the most economic, are quite unsatisfactory because the optimum maneuverability of blade-skates, which is only obtainable through a sufficient grooving, requires a substantial material removal for its restoration, which has proven to be uneconomical.
An improvement, as regards the problem of the costs involved in the restoring of the worn out skating surface, is disclosed in German patent application DE 3445976, which claims a water-repellent skating sheeting consisting of a mixture of saturated hydrocarbons.
In particular such sheeting is based on a mixture of waxes, polymers and copolymers of ethylene, propylene, butylene and mixtures thereof, having a melting point ranging from 30.degree. C. to 130.degree. C.
The materials in question are referred to, in the present specifications, as "Low-Melting Materials" or briefly "LMM". The "LMM" permit to restore the smoothness of the surface worn out by the skates by melting only the layer affected by wearing.
Such materials, however, are characterized by a high thermal expansion coefficient and exhibit poor mechanical properties; in particular a narrow elastic range, a low tensile strength, and a ductile/brittle transition temperature above 0.degree. C.
Such characteristics make it extremely difficult to prepare a smooth surface, free from cracks and splits.
This is due to the fact that, in manufacturing the skating sheeting, during the cooling from the melting temperature to the room temperature, the tensions resulting from the material shrinking cause cracks in several areas.
In order to solve said problems, the above-mentioned patent application claims a paving process consisting in laying preformed LMM tiles, i.e. already freely shrunk from the solidification temperature to the room temperature, onto particular porous substrates of inorganic nature, to which they anchor, thereby forming a prevailingly mechanical bond with said substrates.
A first problem connected with the practical use of pavings of the type claimed in the abovesaid patent application is encountered when the temperature of the LMM substrate complex drops and remains for a long time at values below -2.degree. to -3.degree. C. Under these conditions, many tiles get detached from the substrate, thus rendering the works unrealiable.
Another problem is connected with the formation and propagation of macroscopic cracks at temperatures also of a few degrees above 0.degree. C., which are caused either by frequent temperature fluctuations around such values or by the grooving action of the skates.
The properties of both of these materials make them unfit for skating rinks.
Therefore a material for paving rinks free from the above drawbacks was needed.


A pump enclosure assembly including a submersible pump within an elongate chamber and connected to an excess chamber having a detachable fitting extending through the access chamber to allow easy retrieval and maintenance of the pump. The pump enclosure assembly of the present invention is a sturdy, efficient, inexpensive assembly to promote the efficiency and safety of the pump itself.

Submersible pumps have been used for many years to effectively pump water or the like from one point to another. However, offshore submersible pump assemblies have been difficult to maintain and repair due to the submersible nature of the assembly. Offshore submersible pumps are subject to the daily wear and tear of use while also being exposed to the hostile underwater environment. Off shore pump assemblies for use with pumping water from underground water aquifers, are susceptible to contamination from external forces. Interference with the pump assemblies, such as human interference or natural interference such as gravel, sand and plant life, tends to wreak havoc on the pumps. The submersible pump may become trapped on the floor of the body of water or may be caught in a tow line or anchor line of a boat. In order to maintain and repair the pumps, underwater divers are sometimes used. Other retrieval means such as retrieval lines and ropes may be used but may cause further damage to the pump assembly.
Further, some prior art design of pump assemblies have tended to position or orient the discharge lines such that the discharge line rises in a vertical direction away from the pump assembly. This vertical rise of the discharge line exposes the discharge line to external factors such as boaters and sea animals which may destroy the discharge line. Some pump assemblies have inverted the position of the pump, contrary to its mechanical design, to orient the discharge line along the floor of the body of water.
In addition, the electrical combinations of prior art tend to expose the electrical connections and conductors in a dangerous manner. The risk of electric shock to the maintainer, swimmer, or boater presents a formidable threat to the individual's life.
Further, it is unknown in the prior art to construct a sealed pump assembly which utilizes the submersible pump to generate a vaccuum as a means to pump water for any application. Submersible pumps are not typically used to generate a vaccum. Such pumps are utilized to push water along, not to generate a vaccuum to pump water.
In order to overcome the aforementioned problems, many individuals have designed cumbersome, ineffective and sometimes hazardous assemblies. Therefore, there is still a long felt need for a sturdy, inexpensive pump enclosure which can withstand a sufficient pressure and allow a submersible pump to create a vacuum to pump water in a safe, effective manner.

Portable pump housing for an operable submersible pump unit


A method for printing a coded document includes receiving a print job, generating a document-file identifier, storing a document-file table entry into a document-file table, and printing a coded document. The document-file table entry includes the document-file identifier and the original document-file path. The coded document includes the received document-file data and the generated document-file identifier. A method for scanning a coded document includes receiving scan-document data indicative of a coded document, extracting the document-file identifier from the scan-document data, and searching a plurality of document-file table entries for the scanned document-file identifier. Each of the plurality of document-file table entries includes an entry document-file identifier and an entry document-file path, and may also include a table entry lifetime and/or a plurality of document-file variations. A pull-copy system includes an image forming apparatus, a storage unit, and a processor. The processor may perform the methods for printing and scanning a coded document.

Traditional document copying solutions utilize an image reading device, such as a scanner or a Multi-Function Peripheral (MFP), to scan each page of a document and reproduce each page using a printer with the information obtained during the scan. The process of scanning a paper document and printing a copy of the paper document often results in a degradation of the quality of the document. If the document being scanned is a text document, the sharpness of the text becomes "fuzzier" as a result of a loss of information during the scan and copy process. Similarly, documents containing printed images will suffer a loss of quality when reproduced using traditional scanning and copying methods.
Ideally, the pages in a document to be copied are individual sheets of paper which may be copied in quick succession using a Multi-Functioning Peripheral (MFP); however, even in this ideal condition, copies produced from scanning the pages will result in a document being reproduced at a lower quality than the scanned document. In less ideal situations, the document is more permanently bound—perhaps with staples or bound within a book—requiring each page to be manually scanned and copied. In addition to the added manual labor, pressing a book onto a flat scanning device does not provide a flat page to scan, and as a result the text near the binding of the book is skewed and the edge of the reproduced page is darkened.
In order to reproduce a document at its original image quality, a user likely needs to identify the printable file on a personal computer (PC), open the printable file, launch a printer driver, send the print job to the printer, and retrieve the newly printed document. These steps may take considerable time.

Pull copying using document-file identifiers


A reentry apparatus has an outer catheter configured to accommodate a first reentry device and an inner catheter configured to fit within the outer catheter. The inner catheter has a series of expanding anchors extending from the outer surface of the inner catheter and a reentry channel configured to accommodate a second reentry device. A retaining wire extends along the upper surface of the expanding anchors. A reentry channel is located in the configured to accommodate a second reentry device.

Atherosclerosis, or hardening of the arteries, is a medical condition where atherosclerotic material (i.e., plaque) accumulates along the inner walls of a blood vessel. As plaque builds up, the blood vessel may become partially or completely blocked, leading to issues such as coronary heart disease, angina, carotid artery disease, peripheral artery disease, and chronic kidney pain. Sometimes blood clots form near the blockage, or a piece of the blockage breaks off, and travels through the person's vascular system, which can potentially result in a heart attack or a stroke. Various intervention devices and procedures have been developed to treat atherosclerosis and related issues. Many of these intervention devices are now designed for intravascular use so as to minimize the invasiveness of the procedure.
A common example is an angioplasty. During an angioplasty procedure, an intravascular device(s) is used to move a balloon through a persons' vascular system to the site of the blockage. Once appropriately positioned, the balloon is inflated to compress the surrounding plaque, thereby increasing the lumen available for blood flow. The balloon is then deflated and removed and oftentimes a stent is inserted to help keep the plaque in its newly compressed state. However, in some cases the plaque blockage is too large, which prevents the angioplasty balloon or other intervention device from being appropriately positioned to perform the treatment. In such cases the procedure must generally be aborted unless the blockage can be circumnavigated (i.e., crossed).
Chronic Total Occlusions ("CTOs") are one type of plaque blockage that often requires such crossing. CTOs are generally blockages classified as having a Thrombolysis In Myocardial Infarction ("TIMI") grade flow of 0 or 1; 0 (no perfusion) referring to the absence of any antegrade flow beyond a coronary inclusion, and 1 (penetration without perfusion) referring to a faint antegrade coronary flow beyond the occlusion, with incomplete filing of the distal coronary bed. Regardless, when a CTO or other serious plaque blockage is encountered, a reentry catheter may be used to cross the blockage.
Typically, the reentry catheter is advanced along a guidewire either through the blockage itself or into the layered walls of the blood vessel where it can then be advanced passed the blockage. Once the reentry catheter is sufficiently advanced through or past the blockage, a tool is used to reenter the true lumen of the blood vessel. Using the tool, the guidewire is advanced past the blockage and into the true lumen of the blood vessel. The reentry catheter is then typically removed and the desired intervention device may be advanced into position and used to treat the person. An example of such a device is the Outback® LTD® reentry catheter by Cordis® (https://emea.cordis.com/emea/endovascular/lower-extremity-solutions/cross/outback-ltd-re-entry-catheter.html).
Known devices, however, can be difficult and cumbersome to operate. They may require precise positioning and movement to perform the reentry procedure and may not be particularly stable. Further, known devices may provide only one reentry port configured to accommodate a single reentry device at a single angle. This can be particularly problematic as unpredictable wall thicknesses, blockage positioning, material compositions, and calcification densities can require differently positioned, sized, and types of reentry devices to perform a successful cross. Therefore, what is needed is a reentry catheter that is easy to use and provides multiple reentry ports for multiple reentry devices.
The present invention is a reentry catheter that is easy to use and provides multiple reentry ports for multiple reentry devices. The reentry catheter may comprise an outer catheter tube surrounding an inner catheter, both extending from a handle assembly. The inner catheter may be configured to normally remain substantially in line with the outer catheter, but upon removal from the outer catheter, revert to a pre-shaped state wherein the distal portion of the inner catheter is bent at an angle.
A series of expanding anchors may be located long the outer wall of the inner catheter and when the inner catheter is located inside of the outer catheter, the expanding anchors may be placed in a compressed state. However, once positioned at a treatment site, the inner catheter may be advanced relative to the outer catheter, thus exposing some or all of the expanding anchors. The expanding anchors may expand against the blood vessel wall, stabilizing the device and forcing the distal portion of the inner catheter towards a reentry target. Once appropriately positioned, a user of the device may advance a first or a second reentry device through one of two reentry apertures the inner catheter. Preferably, a first reentry aperture is located on the distal end of the inner catheter and a second reentry aperture is located along the side wall of the inner catheter such that the first and the second reentry device exit the inner catheter at different angles.