A method for controlling a reversible belt tensioner of a safety belt in a motor vehicle includes detecting a time profile of at least one state variable and/or at least one variable relating to the surroundings of the motor vehicle, identifying a predetermined driving maneuver and/or a value characterizing the attentiveness of a driver from the time profile of the at least one detected state variable and/or variable relating to the surroundings, and controlling the reversible belt tensioner based on the identified driving maneuver or on the basis of the value characterizing the attentiveness of the driver.

The present invention relates to a method for controlling a reversible belt tensioner of a safety belt in a motor vehicle. In addition, the present invention relates to a driver assistance system for a motor vehicle. Finally, the present invention relates to such a vehicle.
Today's vehicles are equipped with a conventional belt system without a reversible belt tensioner or with a belt system with a reversible belt tensioner. For motor vehicles that are equipped with reversible belt tensioners, the safety belt is tightened at the beginning of a trip when the belt is inserted and the so-called belt slack is removed. However, slack can be introduced again into the respective safety belt system during the trip by movement of the driver or of the passenger or as a result of a driving maneuver. The safety belt is then no longer sufficiently tightened and the safety of the driver or of the other vehicle occupants is no longer fully guaranteed.
DE 10 2005 035 850 A1 relates to a method for controlling a reversible belt tensioner in a motor vehicle, wherein the time profile of a measured value characterizing the vehicle dynamics is determined and a gradient of this measured value is calculated. The belt tensioner is activated when the gradient of the measured value exceeds a predetermined threshold value.
DE 10 2005 035 863 A1 describes a method for controlling a reversible belt tensioner in a motor vehicle. In this case, the belt tensioner is activated, so that a safety belt is brought from a normal position to a second position wherein the belt is tightened more than in the normal position. The belt tensioner is here activated independent of any dangerous situation.
DE 10 2008 050 316 A1 discloses a method for dynamically securing a vehicle occupant strapped in a seat of the vehicle with a safety belt. Here, a transverse dynamics of the vehicle is determined by at least one sensor. A slack of the safety belt is then at least partially rolled up by a safety belt retractor, when an upper threshold value of the transverse dynamics is exceeded, and a radius of curvature of a road course ahead remains constant or decreases.
DE 10 2008 007 149 A1 describes a method for generating, controlling and triggering a warning signal in a motor vehicle. Here, an attentiveness measure of the driver is determined by analyzing the driver's eye blink. A corresponding warning signal is outputted, for example by activation of the belt tensioner, in response to the attentiveness.
Lastly, systems are used in modern motor vehicles, wherein the field of vision of the driver is monitored by a camera. For example, when the driver turns his eyes away from the road and the driver assistance system recognizes a corresponding obstacle on the road, the driver is warned visually or audibly. However, the installation of such systems results in additional costs.

Method for controlling a reversible belt tensioner of a safety belt in a motor vehicle


A method and a system evaluate an efficacy of a test suite in a model-based diagnostic testing system to determine a revision of the test suite. The evaluation comprises suggesting a test to be added to the test suite based on probabilities of a correct diagnosis and an incorrect diagnosis. The evaluation either alternatively or further comprises identifying a test to be deleted from the test suite based on probabilities of a correct diagnosis for the test suite and for a modified test suite that does not include a test. An efficacy value of each test in the test suite is computed. The system has a computer program comprising instructions that implement an evaluation of diagnostic efficacy of the test suite. The system either is a stand-alone system or is incorporated into the testing system.

Testing of a device is normally an integral part of the design, manufacture and maintenance of the device. Testing is routinely employed during the design of a new device to establish reliability and an operational capability of the device. In manufacture, testing establishes and/or quantifies operability of the device as well as facilitates yield improvements through failure diagnosis. Once the device is deployed, testing helps to maintain the device by detecting potential failures and diagnosing the cause or causes of failures of the device or its components.
In most cases, testing comprises performing a set or sequence of tests on the device under test (DUT). Such a set of tests or test suite typically employs one or more pieces of test equipment. Together, the test equipment and the test suite are referred to as a testing system. In some cases the testing system comprises a complex, integrated and highly automated system. In other cases, the testing system is only loosely integrated and many, if not all, of the tests are performed manually. In yet other cases, a testing subsystem is built into the DUT and functions as a built-in self-test for the DUT. As used herein, the term 'testing system' includes all such testing systems including a built-in testing subsystem of the DUT.
However, while testing systems vary widely according to the DUT and the application of the testing system, at some basic level all testing systems generally attempt to determine whether a given DUT is GOOD or BAD. A GOOD DUT is one that passes the tests administered by the testing system while a BAD DUT is one that fails one or more of the tests. Since DUTs generally are made up of one or more components, a secondary goal of many testing systems is to diagnose which component or components of the DUT is responsible the DUT being BAD. Thus, many testing systems include some form of a diagnostic system that performs a component or subsystem level diagnosis of failures encountered during testing. A DUT with a built-in test subsystem also may feature a built-in self-diagnostic capability.
For example, a given DUT typically includes a variety of components. Such components include, but are not limited to, integrated circuits, electrical components, battery subsystems, mechanical components, electrical buses, wiring components, and wiring harnesses. Any one or more of these components may fail and cause the failure of the DUT. The role of the diagnostic system portion of the testing system is to attempt to pinpoint the component or components that most likely caused the encountered failure or failure mode of the DUT.
Typically, diagnostic systems of testing systems either employ a fault tree approach to produce a diagnosis or attempt to extract a diagnosis from a combination of results of functional tests used to verify DUT functionality. In simple terms, a fault tree is a flow chart of tests to perform and related diagnoses. Tests are performed at each of a series of decision blocks of the flow chart. At each decision block, results of the test performed determine which of a plurality of branches leading out of the decision block is to be taken. Branches either lead to additional decision blocks or to stop blocks. Stop blocks give a diagnosis and represent an end point of the fault tree. Typically the stop blocks are annotated with the diagnosis (e.g., a name of a failed component) or with "no diagnosis is possible" indication. Thus, when a stop block is reached, the annotation gives the diagnosis. In general, only enough tests necessary to reach a stop block giving a diagnosis are performed when a fault tree is employed. Typically, fault trees are designed to mimic a decision-making process followed by a skilled test technician.
On the other hand, diagnostic systems based on the results of functional tests typically require that all tests of a predetermined set or test suite be performed before an attempt at a diagnosis can be made. Moreover, many such diagnostic systems employ a model or models of the DUT. As used herein, a model-based diagnostic system is defined as a diagnostic system that renders conclusions about the state or failure mode of the DUT using actual DUT responses to applied functional tests that are compared to expected responses to these tests produced by a model of the DUT. Often, the model is a computer-generated representation of the DUT that includes specific details of interactions between components of the DUT.
Selecting a suite of tests to perform is an important step in using model-based diagnostic testing systems. Performing too few tests or performing the wrong tests can lead to an inability to arrive at a diagnosis or even an incorrect diagnosis. In other words, a poorly designed test suite may not provide a particularly effective or reliable diagnosis of a DUT failure. In particular, for a given test suite, simply adding tests may not improve the diagnostic efficacy of the test system. Thus, often the problem is how to choose additional tests to add to the suite to increase diagnostic efficacy.
On the other hand, performing too many tests is potentially costly in terms of time and test equipment needed to arrive at a diagnosis. Moreover, some of the tests may be redundant and add little if anything to the diagnostic accuracy of the test system. In particular, many tests performed on a DUT can take an appreciable amount of time to perform and/or require the use of expensive equipment. If performing such tests does not increase the diagnostic efficacy of the testing system, the tests might just as well be eliminated. In such situations, the problem is one of determining which tests of a test suite may be eliminated without significantly reducing diagnostic efficacy.
Accordingly, it would be advantageous to be able to examine a test suite to determine what tests might be added to improve the diagnostic efficacy of the testing system. Likewise, it would be useful to be able to determine which tests in a test suite are redundant or have little added diagnostic value and, therefore, can be safely eliminated from the suite. Such abilities would address a longstanding need in the area of model-based diagnostic testing systems.

Revising a test suite using diagnostic efficacy evaluation


An IC voltage clamp and a process for forming the voltage clamp. The voltage clamp includes an MGFO device having an n-type source region, an n-type drain region, and a p-type field implant diffusion between the source and drain regions. The voltage clamp further employs a parasitic NPN device having a collector region coincident with the MGFO drain region, an emitter region coincident with the MGFO source region, and a base region formed by the substrate. A metal gate electrode overlies and is insulated from the field implant diffusion, but electrically connects the source and emitter regions to ground. An input electrode contacts the drain region so as to electrically connect the drain and collector regions to the input voltage of an integrated circuit. The field implant diffusion and drain/collector regions are formed by overlapping their masks, such that a lower breakdown voltage is achieved between the NPN collector and the substrate and field implant diffusion (the NPN base). The voltage clamp is capable of withstanding electrostatic discharge pulses of greater than about 8000 Vdc, and is particularly adapted for use in protecting a CMOS IC that operates at high voltages, such as automotive battery voltages with 40 Vdc transients, without interfering with the operation of the IC.

Due to the sensitive nature of CMOS integrated circuits (IC's), a concern with designing a CMOS IC is providing adequate protection of the IC from electrostatic discharges (ESD) that might damage the gate oxides and junctions of the IC. A countervailing consideration is that a device, termed a "voltage clamp," designed to protect the IC must not interfere with the operation of the IC under tolerated voltage conditions, yet must respond in such a way as to reliably protect the IC if such tolerated voltage conditions are exceeded.
FIG. 1 represents a schematic of a voltage clamp 10 that includes a metal gate field oxide (MGFO) transistor 12 and a parasitic NPN transistor 14. The MGFO and NPN transistors 12 and 14 are connected between an input pad 16 and a ground node of a CMOS IC 18. As shown, the MGFO transistor 12 is connected in the "OFF" state, i.e., with its gate and source grounded and its drain connected to the input pad 16. The NPN transistor 14 is also normally "OFF," with its emitter and base tied to ground and its collector tied to the input pad 16. The MGFO transistor 12 establishes the spacings and dimensions of the parasitic NPN transistor 14. With positive ESD voltages, the MGFO transistor 12 behaves as a parasitic NPN. With negative ESD voltages, the MGFO transistor 12 behaves as an NMOS transistor.
A cross-sectional representation is illustrated in FIG. 2A of a prior art voltage clamp 10a embodying the circuitry of FIG. 1. The voltage clamp 10a is formed in a silicon substrate 20 doped p-type, which is tied to ground 32 through a p-type region 36. Formed in the substrate 20 are an n-well 22, a field implant diffusion 24 doped p-type, a field oxide 28 overlying the field implant diffusion 24, and two regions 26 and 30 doped n-type, the latter of which is formed in the n-well 22. Finally, a metal gate electrode 34 tied to ground 32 overlies the field oxide 28 and contacts the first n-type region 26, while an input pad electrode 16a of a CMOS transistor (not shown) contacts the second n-type region 30. With this structure, an MGFO transistor is defined having a source region formed by the first n-type region 26, a drain region formed by the n-well 22, and a gate formed by the metal gate electrode 34, while an NPN transistor is defined having an emitter region also formed by the first n-type region 26, a collector region formed by the n-well 22, and a base region formed by the substrate 20 and the field implant diffusion 24. With the above, the first n-type region 26 (the MGFO source and the NPN emitter) is tied to ground 32, and the second n-type region 30 provides ohmic contact to the n-well 22 (the MGFO drain and NPN collector) for the input pad 16a.
The n-well 22 and the substrate 20 define an np junction 50 therebetween, and the field implant diffusion 24 increases the p-type carrier (hole) concentration in the field areas and thus raises the field threshold of the MGFO transistor and the collector-to-emitter breakdown voltage of the NPN transistor. Prior art layout practice dictates that the mask 38 for the field implant 40 (FIG. 2C) is laterally offset about 1.2 micrometers from the mask 42 for the n-well implant 44 (FIG. 2B), as seen by the placement of the field implant 40 relative to the n-well implant 44, the latter of which is shown in phantom in FIG. 2C. During diffusion of the n-well implant 44 to form the n-well 22, the concentration of electrons in the n-well 22 decreases as the junction 50 is approached. As a result, subsequent diffusion of the field implant 40 creates a lightly-doped region 50 at the np junction 50 between the field implant diffusion 24 and the n-well 22, as shown in FIG. 2A. The lightly-doped region is defined by that portion of the field implant diffusion 24 that overlaps the n-well 22 by no more than about 2 micrometers for the purpose of preventing premature breakdown of the np junction 50. If the voltage at the input pad 16a exceeds the collector-to-base breakdown voltage of the NPN transistor, the NPN transistor goes into an avalanche condition by which excess voltage at the input pad 16a is conducted and shunted through the substrate 20 to the first n-type region 26 and ground 32.
The suitability of a voltage clamp for a given application depends in part on the operating voltage of the IC to be protected. A particularly challenging application is CMOS IC's that operate at 12 volts dc (Vdc) off the battery supply of an automobile. Automobile battery voltages are defined herein as "high voltages" in order to be distinguished from "low voltage" automotive applications that operate at 5 Vdc and less. A complicating factor of high voltage applications is that automotive batteries have associated low-impedance transient voltages of about 40 Vdc (possibly higher transients are possible, but are less destructive due to a higher impedance), while the gate oxides for CMOS IC's used in these applications typically have rupture voltages of about 62 Vdc. Therefore, to prevent its destruction by low-impedance transients, a voltage clamp must tolerate certain transient voltages (e.g., about 40 Vdc), yet prevent higher voltages (e.g., about 62 Vdc) from reaching the CMOS IC. Prior art voltage clamps of the type shown in FIG. 2A exhibit collector-to-base breakdown voltages exceeding the gate oxide rupture voltage (about 62 Vdc) of CMOS devices operating at high voltages, and have therefore been unable to protect these devices.
Accordingly, what is needed is a voltage clamp that is reliably capable of protecting CMOS IC's employed in high voltage applications, such as IC's that operate at automotive battery voltages with 40 Vdc transients, without interfering with the operation of the IC at such voltages. Such a voltage clamp would preferably not entail processing that conflicts with or otherwise unduly complicates conventional processing employed to produce integrated circuits.

Method for forming voltage clamp having a breakdown voltage of 40 Vdc


A process for removal of impurities, in particular of dopants, from chlorosilanes which includes the following steps: (a) heating a deposition surface (3); (b) contacting the heated deposition surface (3) with at least one gaseous chlorosilane mixture, the gaseous chlorosilane mixture including at least one chlorosilane and at least one impurity, in particular at least one dopant; (c) at least partially removing the impurity, in particular the dopant, by forming polycrystalline silicon depositions on the deposition surface (3), the polycrystalline silicon depositions being enriched with the impurity, in particular with the dopant; (d) discharging the purified gaseous chlorosilane mixture; (e) contacting the heated deposition surface (3) with an etching gas to return the polycrystalline silicon depositions and the impurity, in particular the dopant, into the gas phase to form a gaseous etching gas mixture; and (f) discharging the gaseous etching gas mixture.

Production of crystalline silicon layers for solar cells and microelectronics may be carried out inter alia by chemical gas phase epitaxy of silicon on substrates to achieve markedly lower layer thicknesses compared to conventional production processes comprising sawing of silicon blocks from the Czochralski or zone melting processes. Since in chemical gas phase epitaxy the thickness of the silicon layer formed may be controlled through suitable choice of the reaction conditions a subsequent sawing of the silicon, indispensable for silicon blocks from the aforementioned processes, is not required, thus avoiding sawing losses. The reduction in the layer thickness and sawing losses made possible by chemical gas phase epitaxy thus results in a marked reduction in production costs.
Suitable silicon precursor compound include inter alia silanes and chlorosilanes, the use of silanes generally being avoided due to their capacity for autoignition on contact with atmospheric oxygen. For thermodynamic reasons it is generally only a small proportion of the employed precursor compound that is deposited as a solid layer on a substrate in a chemical gas phase deposition. This proportion is dependent of a gas composition in the reaction chamber of the chemical gas phase deposition. In the production of crystalline silicon layers by gas phase epitaxy using chlorosilanes as the precursor compound, for example silicon tetrachloride or trichlorosilane, only around 25% of the chlorosilane is converted for example. Polluting and sometimes very difficult to purify waste products in the form of gaseous chlorosilane mixtures are therefore continuously generated. To reduce process costs and to reduce these polluting waste products it is therefore absolutely necessary, especially on a large industrial scale, for the unused chlorosilane to be purified and recycled into the process,
However, a problem in such recycling of the chlorosilane is that the offgas discharged from large industrial scale plants contains not only unused chlorosilanes and hydrogen as process gas but also small amounts of unused dopants and impurities. Dopants are present in the gaseous chlorosilane mixtures in traces of just a few ppb (parts per billion) for example. Such low concentrations of dopants cannot be removed to a sufficient extent by conventional chlorosilane recycling, such as for example using a distillative separation apparatus with an upstream gas scrubber. Yet, since even small variations in the concentration of the dopants have a marked effect on the semiconductor properties of silicon, the concentration of the dopants in the chlorosilane must be adjusted with a precision of just a few ppm, and impurities removed, before the chlorosilane is supplied again to the actual epitaxy process. While such high-purity chlorosilanes are commercially available they are very costly to produce which ultimately adversely affects the process costs of chemical gas phase epitaxy. Relatively inexpensive chlorosilanes generally contain metal-containing impurities which likewise have a marked effect on the semiconductor properties of crystalline silicon layers.
Since a distillative purification of the chlorosilane mixtures is insufficient for the removal of such impurities, processes using microporous solid phase materials to remove the dopants have been proposed for example, said solid phase materials binding the dopants by way of physical interactions to remove them from a liquid or gaseous chlorosilane mixture. For example, U.S. Pat. No. 4,713,230 A proposes a process for removal of boron-containing dopants from chlorosilanes wherein a gaseous boron-containing chlorosilane mixture is passed over a silica gel. This process does allow a reduction in the boron concentration down to 100 ppba (parts per billion atomic). However, when using silica gel further waste products requiring corresponding disposal are generated. The amount of purified chlorosilane and the purification rate further depend strongly on the properties and the amount of the employed solid phase material with the result that such a solid phase material may be integrated on a large industrial scale into a circular process only with difficulty.

Process and apparatus for removal of impurities from chlorosilanes


A system and multiple methods are described for removing dissolved gases from a liquid either prior to or following filling into a container. Prior to filling, gas is removed by creating a pressure differential, by application of heat, by sonication, or by generating a liquid by combination of dry solute and de-gassed solvent. Alternatively, liquids may be highly concentrated with solute to force any dissolved gas out of solution and later diluted with de-gassed solvents. In other embodiments, gases are percolated into liquids to displace atmospheric gases, wherein these percolated gases separate from solution and diffuse out of sealed contained after filling either by nature of their molecular size or chemical reaction with materials constructed into the container.

This invention relates to a system and multiple methods for removing gas from an aqueous solution, and in particular, embodiments for avoiding subdermal hematomas from the use of a needle-less injector when the system and methods are employed in conjunction with the loading of a needle-less injector ampoule.
In an application in which a liquid must be filled into a sealed container, it may be preferable that substantially all gas be removed from the liquid either prior to filling or soon after the container is filled. For example, in filling ampoules with liquid medications for use in a needle-less injector, it may be desirable to de-gas the medication prior to filling the ampoule or, alternatively, for the medication to be de-gassed once the ampoule is filled.
Typically, needle-less medication injections are performed with xe2x80x9cpermanent gunxe2x80x9d instruments, generally referred to as xe2x80x9cjet injectors.xe2x80x9d These devices use either a compression spring or a compressed inert gas to propel the fluid medication (via a push rod plunger) through a small orifice (an injector nozzle) which rests perpendicular to and against the injection site. The fluid medication is generally accelerated at a high rate to a speed of between about 800 feet per second (fps) and 1,200 fps (approximately 244 and 366 meters per second, respectively). This causes the fluid to pierce through the skin surface without the use of a needle, resulting in the medication being deposited in a flower pattern under the skin surface. This method of medication delivery is referred to as a subcutaneous injection.
Medication delivery via needle-less injector periodically results in the formation of subdermal hematomas, and efforts have been made to reduce the likelihood and severity thereof. In U.S. Pat. No. 6,156,008 issued Dec. 5, 2000, we described an injection site detecting device for avoiding subdermal hematomas from an injection, wherein the detecting device is employed prior to injection to locate a site of low blood flow, relative to the surrounding area. Since it is believed that administering a needle-less injection in a region of lower blood flow corresponds to lower bruising potential, utilization of this device reduces the likelihood of causing a subdermal hematoma from administration of an injection with a needle-less injector.
Subdermal hematomas, tissue damage, and scarring from mechanical force injury may also result from the use of needle-less injectors when pockets of gas are present in the injector ampoule prior to dispensing the medication contained therein. Within the 800 to 1200 fps range, optimal for acceleration of liquid medication through the skin via a needle-less injector, liquid readily penetrates the skin while air does not. Thus, gas pockets accelerated against the skin lead to the formation of a bruise and can be quite painful for the recipient, whereas liquid medication passes into and/or through the skin without discomfort.
In general, the gas pocket is found at the dispensing terminus of the ampoule, which is proximate to the skin, though this can change depending on the orientation of the ampoule during storage. Further, when the cap is removed from the end of a needle-less injector, exposing the dispensing area for application to the skin surface, any gas pocket not already situated at the dispensing end may tend to migrate toward that end, due to the pressure change caused by cap removal. This motion of the gas pocket often forces some liquid from the ampoule, thereby diminishing the volume of liquid that will be injected into the recipient. This renders the dosage level inaccurate, as a nontrivial volume of medication is lost from the injector prior to use.
Gas pockets may be present from the outset, resulting from the improper loading of an ampoule. Filling the ampoule with an insufficient amount of liquid clearly leaves such a pocket. However, overfilling the ampoule and removing any excess to arrive at the desired volume is generally not a practical alternative, either, since it is likely that a small amount of liquid will remain on the outer surface of the ampoule. In the medical context, any such liquid is likely to foster the growth of bacteria, which is unacceptable in a scenario where sterile conditions are imperative. Any ampoule with such bacterial growth must be disposed of, and is therefore wasteful.
Even in a perfectly filled ampoule, where no cognizable gas pockets are present immediately following loading, pockets may still develop over time as the dissolved gases present in the liquid separate out from solution. Dissolved gases are naturally present in liquids as a function of the gases"" partial pressures in the local atmosphere. Known to those skilled in the art as Henry""s Law, the concentration of a particular gas in solution is proportional to the pressure of that same gas in the air abutting the solution. Thus, dissolved gases are present in the liquids filled into ampoules under normal conditions (i.e., wherein filling is not performed in a vacuum, or the like) in concentrations proportional to their partial pressure in air. These dissolved gases consist mostly of nitrogen and oxygen, along with several trace gases, and are found latent in the solution in amounts related to their partial pressures in the local atmosphere.
The size of gas pockets varies according to the pharmaceutical active in solution, as some actives allow liquid to retain greater amounts of gas than others, but in some instances a pocket may be as large as 20% of the total ampoule volume. This naturally occurring formation of gas pockets is exacerbated when pre-filled ampoules remain unused for substantial periods of time. Again, varying with the type of active in solution, some actives will form substantial gas pockets after only a few days, while others may not form a pocket for a year or more. For certain medicaments, an ampoule may be stored as long as three to five years, and nearly every active will generate a gas pocket in that amount of time.
Increased temperature also affects the separation of gas from solution, prompting gas pockets to form faster and larger. Pharmaceutical actives generally require storage within a certain optimal temperature range in order to prevent the active from breaking down and thus losing efficacy. For example, many proteins suitable for injection will denature at high temperatures. However, optimal temperature ranges for efficacy may not have any correlation with temperature that would avoid a gas pocket from forming in storage. Thus, one may be forced to choose between either preserving drug efficacy or minimizing gas pocket formation.
In the context of injection by more traditional means such as with a preloaded syringe, it is well established that any significant amount of air in such a device will cause pain for the recipient and potentially far more dire consequences if the amount of air is substantial. Gas pockets may develop in these syringes much in the way described above with regard to ampoules of needle-less injectors, as these devices are frequently subject to similar storage conditions and requirements. Those administering such injections can more readily obviate these limitations, however, as air may be evacuated from the liquid-containing chamber of a syringe by partially depressing the plunger while the syringe is inverted immediately prior to administration of an injection. This is generally not possible with a needle-less injector, as the entire volume of a needle-less injector ampoule is evacuated in one step during normal operation. Moreover, liquid that is inadvertently evacuated from the chamber of a syringe along with the undesirable air does not present a sterility concern, since bacteria will not grow in a pharmacologically hazardous amount in the few moments between evacuating such air and administering an injection. Oftentimes some small quantity of air will remain in the syringe chamber, however, resulting in an injection more painful than would have been had the air been removed by another, more thorough methodology.
It is an object of an embodiment of the present invention to provide a method for removing gas from an aqueous solution.
It is an object of another embodiment of the present invention to provide a method for filling a container with a de-gassed liquid, wherein the liquid contains gas prior to being filled into the container.
It is an object of another embodiment of the present invention to provide a method for filling a container with liquid containing a gas wherein the gas separates out from the liquid such that the liquid becomes de-gassed.
It is an object of yet another embodiment of the present invention to provide a method for avoiding subdermal hematomas in the course of administering needle-less injections, that obviates for practical purposes, the above-mentioned limitations.
The present invention relates to a system and multiple methods for removing dissolved gases from a liquid to be filled into a container that is subsequently filled as well as methods for removing gases from a liquid after a container is filled. One embodiment of the instant invention involves partially filling a tank with gas-containing liquid and applying a vacuum source to an opening in the tank so that the atmospheric pressure above the gas-containing liquid is significantly reduced. In particular embodiments of the invention, the tank may be rotated to facilitate consistent removal of dissolved gases throughout the liquid. In alternative embodiments, the tank may be heated to further facilitate the gas removal process. Once the desired amount of dissolved gas has been removed, the vacuum source may be removed from the tank opening and the tank may be sealed. The tank may then be turned upside down so that the de-gassed liquid is near the opening and the tank may be coupled to filling equipment. Filling equipment may then be used to fill a container, such as the ampoule of a needle-less injector, a syringe, or the like.
The device in this embodiment operates as a function of what is known to those skilled in the art as Henry""s Law, which states that the pressure of a gas abutting a solution is proportional to the concentration of the same gas dissolved in the solution. Thus, as the air pressure in the tank of the present invention is reduced, the concentration of the gases in the solution decreases accordingly. In this embodiment of the present invention, these gases consist mostly of nitrogen and oxygen, and are found latent in the solution in amounts related to their partial pressure in the local atmosphere. However, the system will function in substantially the same manner with other dissolved gases.
Another embodiment of the instant invention involves partially filling a tank with gas-containing liquid and heating the tank. The liquid in the tank is either boiled or warmed to a temperature below its boiling point, while the tank remains open. Once the desired amount of dissolved gas has been removed, the tank opening may be sealed. The tank may then be turned upside down so that the de-gassed liquid is near the opening and the tank may be coupled to filling equipment. Filling equipment may then be used to fill a container, such as the ampoule of a needle-less injector, a syringe, or the like.
Yet another embodiment of the instant invention involves partially filling a tank with gas-containing liquid and resonating sound waves through the liquid, where such waves are originated by the high frequency oscillations at the tip of a device deployed therein. Known to those skilled in the art as xe2x80x9csonicating,xe2x80x9d such a device agitates a liquid and removes gas therefrom, while no harm is caused to a solute dissolved therein. This device may be employed in conjunction with a vacuum, heat, or a combination thereof. Once the desired amount of dissolved gas has been removed, the tank opening may be sealed. The tank may then be turned upside down so that the de-gassed liquid is near the opening and the tank may be coupled to filling equipment. Filling equipment may then be used to fill a container, such as the ampoule of a needle-less injector, a syringe, or the like.
Yet another embodiment of the instant invention involves filling a vacuum-sealed bag with lyophilized solute, or another solute in either liquid or solid form. De-gassed water or another appropriate de-gassed solvent may then be added to the bag, with the resulting solution being substantially free of dissolved gas. The bag can then be coupled to filling equipment and used to fill a container, such as the ampoule of a needle-less injector, a syringe, or the like.
Yet another embodiment of the instant invention involves partially filling a tank with gas-containing liquid and percolating another gas through the liquid. Concurrently, a vacuum is applied to the interior atmosphere of the tank such that a portion of the percolating gas is removed, along with a portion of the gas that was formerly dissolved in the liquid. The rate of addition of percolating gas to the system may be less than, equal to, or greater than the rate at which gas is removed from the tank via the vacuum source, such that a user may additionally utilize a pressure differential to drive gas out of the liquid. Once the desired amount of dissolved gas has been removed from the liquid, displaced by the percolating gas, the vacuum source and percolating gas line may be removed from the tank and the tank may be sealed. The tank may then be turned upside down so that the percolating gas-containing liquid is near the opening and the tank may be coupled to filling equipment. Filling equipment may then be used to fill a container, such as the ampoule of a needle-less injector, a syringe, or the like. The percolating gas may remain dissolved in the liquid after a container is filled therewith. Of the two types of preferred percolating gases, one type diffuses out of the container directly through the walls thereof, while the other type bonds or otherwise chemically reacts with a part of the container or other mechanical structure in contact with the liquid or chemical lining on the interior of the container, such that the gas extracts itself from the liquid. Preferably, the gas does not change phase during this bonding or other reaction.
Yet another embodiment of the instant invention involves xe2x80x9csalting outxe2x80x9d the dissolved gas from a liquid to be filled into a container. Along with any desirable solute, a salt or buffer is added to a liquid at a sufficiently high concentration such that substantially no gas can remain in the concentrated solution. The solution can be filled via filling equipment into a container, such as the ampoule of a needle-less injector, a syringe, or the like. The solution can further be diluted with de-gassed water or another suitable de-gassed liquid either prior to filling into a container, immediately after filling into a container, or at a later time such as just before administration of an injection with a needle-less injector.
Yet another embodiment of the instant invention involves a process similar to xe2x80x9csalting out,xe2x80x9d however in this embodiment the solute itself (e.g., a pharmaceutical active) is present in the liquid in such a high concentration that substantially no gas can remain in the liquid. The solution can be filled via filling equipment into a container, such as the ampoule of a needle-less injector, a syringe, or the like. The solution can further be diluted with de-gassed water or another suitable de-gassed liquid either prior to filling into a container, immediately after filling into a container, or at a later time such as just before administration of an injection with a needle-less injector.
Yet another embodiment of the instant invention involves an absorbent material being held in a compartment external to the container, where only gaseous communication exists between this compartment and the interior of the container. The liquid contains a gas that is absorbed by the material contained in the compartment, such that the liquid de-gasses after the container is filled.

System and method for removing dissolved gas from a solution


Ceramic filler compositions of customized shapes (FIGS. 1-30) according to the present invention, includes ceramic and glass-ceramic particles having a customized shape which provides mechanical locking within a resin matrix giving significantly improved fracture toughness performance for a resin/glass or ceramic composite system. The material has particular application as a tooth filling material with significantly improved wear resistance. The wide range of unique-shaped filler particles are produced using wet chemistry methods according to the invention of preparing the ceramic particles for use in a resin matrix composite material. Such composite materials have a very wide application, especially as a dental composite filling material for restoring a tooth.

This invention deals with development of an improved resin glass or ceramic composite system which has wide application and may be used for dental restorative filling materials for teeth and biomedical bone cement. It will be appreciated by one skilled in the art that modern 'dental composite' materials are a blend of glass and/or ceramic particles dispersed in a polymerizable synthetic organic resin. The polymer materials are blended together with the finely divided inorganic material such as a barium aluminosilicate or zirconium silicate glass or other glass ceramic compositions having an effective amount of radiopacifying agent that renders the resultant glass radiopaque to X-rays. Such dental restorative composite materials comprised of a blend of liquid polymerizable organic binder and a solid inorganic filler are known to the prior art. Such compositions are described in general terms for example in U.S. Pat. No. 3,066,112. The full potential application in dentistry of glass and glass/ceramic/resin composite biomaterials has not yet been achieved because the current composite materials cannot completely withstand the aggressive environment of the oral cavity. Major shortcomings are low fracture toughness and the inability of the composite materials to resist abrasion and wear in the mouth.
The dental restorative composite materials using the improved filler particles of this invention may be prepared according to known methods of the prior art such as employed in U.S. Pat. No. 3,066,112 which is hereby incorporated by reference for such disclosure. The improved composite restorative system having a tooth-like colour can be used to replace the conventional amalgam or gold dental fillings. Materials such as amalgam suffer from uncertainty as to the biological effect of the introduction of mercury into the oral cavity over long periods of time. In addition the metallic hue of amalgam restorations is not aesthetic.
Currently dental composite systems suffer from lack of sufficient adhesion being established between the inorganic (glass or ceramic) filler and the resin matrix. The modulus of elasticity of a composite material will show the effectiveness of the stress/strain transfer from matrix to the filler particles. The modulus of elasticity and Poisson's ratio of dental restorative materials are also regarded as important fundamental properties, because a material with a low elastic modulus will more readily elastically deform under a given masticatory functional force. Excessive elastic deformation of the restorative material under functional stress may result in catastrophic fracture of surrounding brittle tooth enamel structure, or alternatively increased microleakage may result. The increased use of polymer/glass composite systems as posterior restoratives (in back 'molar' grinding teeth) which are subjected to much higher levels of force than anterior restorations, might suggest the use of materials with a higher modulus of elasticity and fracture toughness in order to minimize the risk of cusp fractures. A dental restorative composite material with a higher modulus of elasticity and fracture toughness will be able to provide support at the interface with tooth enamel to protect the enamel rods at the margin from fracturing. Excessive wear of the restoration due to loss of filler particles (pull-out) followed by easier wearing away of the softer resin matrix is another problem in such situations.
A major limitation of the current dental composite materials is the relatively low fracture toughness. Fracture toughness is the energy absorbed by the material in resisting crack propagation. Dental restorative composite materials exhibiting higher fracture toughness values will have a better resistance to fracture and functional wear.


DNA sequences are described which on the codogenic strand code plant debranching enzymes, whose transcripts formed in transgenic plants code new proteins with the enzymatic activity of debranching enzymes which in transgenic plants reduce the degree of branching of amylopectin starch and DNA sequences which on the codogenic strand code plant debranching enzymes, whose transcripts formed in transgenic plants prevent the synthesis of proteins with the enzymatic activity of debranching enzymes, which in the transgenic plants increases the degree of branching of amylopectin starch, as well as plasmids on which these DNA sequences are localized, which can be introduced into plant cells and plants. Also described is a process for the production of plants changed by genetic engineering whose amylopectin starch is modified, and the modified starch obtainable from these plants.

The present invention relates to DNA sequences which on the codogenic strand, code plant debranching enzymes whose transcripts formed in transgenic plants code new proteins with the enzymatic activity of debranching enzymes which in transgenic plants reduce the degree of branching of amylopectin starch. (The invention also Relates) to DNA sequences which on the codogenic strand code plant debranching enzymes whose transcripts formed in transgenic plants prevent the synthesis of proteins with the enzymatic activity of debranching enzymes, which in transgenic plants increases the degree of branching of amylopectin starch, and also to recombinant plasmids on which these DNA sequences are localized and which can be introduced into plant cells and plants.
The invention also relates to a process for the production of plants changed by genetic engineering whose amylopectin starch is modified, and to the modified starch obtainable from these plants.
Polysaccharides such as starch are, alongside along with oils, fats and proteins, essential renewable raw materials from plants.
A decisive factor which stands in the way of the use of renewable raw materials is the lack of substances which precisely meet the requirements of the chemical industry in regard to form, structure, or other physico-chemical parameters. In order to make the application of renewable raw materials feasible in as many fields of use as possible, it is particularly important to achieve a great material diversity. In regard to polysaccharides, this means that, for example, as many different forms of starch must be provided as possible. This necessitates considering both strongly branched forms which are characterized by a high surface reactivity in their chemical properties, and mildly branched types which are distinguished by a high uniformity of structure. Uniformity of structure is an important prerequisite for highly efficient reaction control during chemical syntheses.
Although starch is a polymer comprising chemically uniform basic components, the glucose molecules, it is a complex mixture of very different molecule forms which differ in respect to their degree of polymerization and the occurrence of branchings of the glucose chains. Starch is therefore not a uniform raw material. In particular, a distinction is drawn between amylose starch, an essentially unbranched polymer comprising .alpha.-1,4 glycosidically linked glucose molecules, and amylopectin starch, which for its part is a complex mixture of differently branched glucose chains. The branchings come about through the occurrence of additional .alpha.-1,6 glycosidic linkages.
In typical plants for starch production, such, for example maize or potato, the two forms of starch occur in a ratio of roughly 25 parts amylose to 75 parts amylopectin.
In regard to the uniformity of a basic substance, such as starch, for its application in the industrial sector, plants are needed which, for example, contain only the component amylopectin or plants which contain only the component amylose. In regard to the versatility of the raw material starch, plants are needed which show forms of amylopectin with differently marked branching. There is thus a great interest in enzymes of the starch metabolism which can modify the degree of branching of the starch molecules, or in gene sequences which can be used for the genetically changing plants so as to be able to synthesize different forms of starch in plants.
It is already known that for certain plant species, for example maize, plant types which contain only amylopectin can be produced by mutagenesis in which individual genes of the plant are inactivated. For potato, a genotype which forms no amylose was likewise produced by chemical mutagenesis with a haploid line (Hovenkamp-Hermelink et al., 1987, Theor Appl Genet 75: 217-221). Haploid lines, or the homozygotic diploid or tetraploid lines developed from them, are not usable in agriculture, however. The mutagenesis technique is not applicable to the agriculturally interesting heterozygotically tetraploid lines, as an inactivation of all copies of a gene is technically not possible because of the presence of four different genotype copies. It is known from Visser et al. (1991, Mol Gen Genet 225: 289) that plant types which form substantially pure amylopectin starch can be produced by antisense inhibition of the gene for the starch granule-bound starch synthetase in potato.
A branching enzyme of the potato is known from WO 92/14827. This enzyme is known as the Q-enzyme of Solanum tuberosum. It is also known that, with the help of DNA sequences which contain the information for the branching enzyme of the potato described in WO 92/14827, transgenic plants can be produced in which the amylose/amylopectin ratio of the starch is changed.
While the occurrence of several Q-enzymes is known for other species, e.g. maize (Singh & Preiss, 1985, Plant Physiol 79: 34-40), it is not known whether, besides the branching enzyme of the potato known from WO 92/14827, other enzymes are involved in the synthesis of branched starch in potato. Besides the Q-enzymes which introduce branchings into starch molecules, enzymes occur in plants which dissolve branchings. These proteins, also known as debranching enzymes, are divided into three groups according to substrate specifity:
The pullulanases, which besides pullulane also use amylopectin, occur in microorganisms, e.g. Klebsiella, and plants. In plants, they are also called R-enzymes. The isoamylases, which do not work with pullulane, but do with glycogen and amylopectin, likewise occur in microorganisms and plants. An isoamylase of maize is described by Manners & Rowe (1969, Carbohydr. Res. 9: 107), and Ishizaki et al. (1983, Agric Biol Chem 47: 771-779) describe an isoamylase of potato. The amylo-1,6-glucosidases are described in mammals and yeasts and use limiting dextrins as substrates.
Besides five endo- and two exoamylases, Li et al. (1992, Plant Physiol 98: 1277-1284) detected only one debranching enzyme of the pullulanase type in sugar beet. This enzyme, which has a size of ca. 100 kDa and a pH optimum of 5.5, is localized in the chloroplast.
Ludwig et al. (1984, Plant Physiol 74: 856-861) describe a debranching enzyme from spinach which uses pullulane as a substrate but which displays an activity three times lower upon reaction with amylopectin.
In the case of the agriculturally important starch-storing cultivated plant the potato, the activity of a debranching enzyme was investigated in 1951 by Hobson et al. (1951, J Chem Soc 1451). It was demonstrated that the corresponding enzyme, unlike the Q-enzyme, does not possess a chain-extending activity and merely hydrolyses .alpha.-1,6 glycosidic bonds. However, it was possible neither to characterize the enzyme more precisely nor to describe DNA sequences which code a protein with the enzymatic activity of a debranching enzyme.
To date, no DNA sequences are known which code a protein with the enzymatic activity of a debranching enzyme from plants which, upon introduction into the plant genome, change the metabolism of the plant in such a way that the degree of branching of the amylopectin starch is increased or reduced.

Debranching enzymes and DNA sequences coding them, suitable for changing the degree of branching of amylopectin starch in plants


High speed optical modulators can be made of a lateral PN diode formed in a silicon optical rib waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.

Optical fibers have been widely used for the propagation of optical signals, especially to provide high speed communications links. Optical links using fiber optics have many advantages compared to electrical links: large bandwidth, high noise immunity, reduced power dissipation and minimal crosstalk. Fiber optic communications links can operate with carrier frequencies in the THz range. In communications systems where optical fibers are used to transport optical communications signals, various optoelectronic devices are used to control, modify and process the optical signals.
An integrated optical modulator is a key component of an optical communications system. An optical modulator uses an electrical signal to modulate some property of an optical wave, like the phase or the amplitude. A modulated optical wave can be sent on a fiber optic link or processed by other optical or optoelectronic devices.
Integrated optoelectronic devices made of silicon are highly desirable since they can be fabricated in the same foundries used to make VLSI integrated circuits. Optoelectronic devices integrated with their associated electronic circuits can eliminate the need for more expensive hybrid optoelectronic circuits. Optoelectronic devices built using a standard CMOS process have many advantages, such as: high yields, low fabrication costs and continuous process improvements.
Previously fabricated silicon-based PIN diode optical modulators have been designed for integrated silicon waveguides with large cross sectional dimensions on the order of several microns. These large modulators are relatively low speed devices capable of modulation at rates in the tens of megahertz, and such low speed devices are not suitable for use in high speed GHz rate systems.

This patent is subject to a terminal disclaimer.

Doping profiles in PN diode optical modulators


Carbon nanomaterials are stabilized and uniformly dispersed in a liquid such as water using a simple procedure. Methylcellulose is added to hot water where it separates and expands with a temperature of about 80-90 degree Celsius. Methylcellulose swiftly dissolves when the water cools down. Carbon nanomaterials are dispersed in a solvent and sonicated. This nanomaterial dispersed solvent is then added to the methylcellulose dispersed water and mechanically stirred. The resulting uniform mixture is up to 90% by weight nanomaterials and is stable for months.

Recent developments in nanotechnology promise that incorporating nanomaterials, such as carbon nanotubes (CNTs), at a very low loading percentage will enhance the overall performance of structural materials many-fold. Carbon nanotubes are quasi-one dimensional, nearly single crystalline (axially), hollow, graphitic carbon structures. The combination of high aspect ratio, small size, excellent mechanical properties, low density, and high electrical conductivity make them perfect candidates as fillers in polymer composites. Experimental as well as theoretical predictions regarding nanotubes suggest an axial Young's modulus of 1 TPa.
These exciting properties make carbon nanotubes greatly desired carbonaceous materials that have a wide range of applications for their extraordinary physical, chemical, and mechanical properties. However, difficulties in dispersing carbon nanotubes and their tendency to aggregate in aqueous environments prevent them from being used in many applications. As prepared nanotubes are insoluble in many liquids, such as water and polymers. A good dispersion of the materials, preferably up to single nanotube level, is of critical importance in achieving the predicted exciting properties for nanotube reinforced materials.
Needs exist for improved methods of dispersing and stabilizing carbon nanomaterials without significantly degrading their physical and chemical characteristics.

Carbon nanomaterial dispersion and stabilization


A liquid crystal light valve includes a first substrate having a transparent electrode formed thereon, a second substrate, a liquid crystal provided between the first and second substrates, a photoconductive layer formed between the liquid crystal layer and the first substrate, the photoconductive layer being adapted to change impedance thereof in response to an incident ray of light thereto, and a light waveguide for emitting light from the first substrate side to the photoconductive layer.

1. Field of the Invention
The present invention relates to a liquid crystal light valve which is used for a projection type display device, a spatial light modulating element and a coherent light operating element.
2. Description of the Related Art
The inventors of the present invention know of other addressing systems for forming an image on a liquid crystal valve according to a signal standing for an image (referred to as an image signal) which include an electric addressing system, a laser head addressing system or a light addressing system.
As to the electric addressing system, a liquid crystal light valve of a simple multiplexing driving system is arranged to have a plurality of scanning electrodes and signal electrodes formed in a matrix manner. This liquid crystal light valve is arranged to selectively apply an electric voltage on any of the pixels consisting of scanning electrodes X1, X2, . . . Xn and signal electrodes Y1, Y2, . . . Ym ranged in the X direction and the Y direction, respectively and transmit a scanning signal and a data signal through electric wires.
As to the light addressing system, a liquid crystal light valve is arranged so that a liquid crystal layer and a photoconductive layer are laid between both of the glass substrates and provide transparent electrodes for directly addressing the liquid crystal through the effect of irradiated light.
Typical examples of the light addressing type liquid crystal light valve have been disclosed in J. Grinberg, A. Jacobson, W. Bleha, L. Miller, L. Frasss, D. Boswell and G. Myer "A New Real-time Noncoherent To Coherent Write Image Converter" and "The Hybrid Field Effect Liquid Crystal Light Valve", Optical Engineering Volume 14, 217 (1975).
In these examples, the liquid crystal light valve of a light addressing type is arranged to have a pair of glass substrates, two transparent electrodes, a photoconductive layer, a dielectric mirror, two orientation films, a sealing member, a liquid crystal layer, and an A. C. power source. The A. C. power source serves to apply a voltage between the transparent electrodes. When an addressing (writing) ray of light is incident to one glass substrate, the impedance of the photoconductive layer is made smaller on the light-hit area (bright state) so that the voltage is applied from the A. C. power source to the liquid crystal layer. On the other hand, on the other area where no light impinges (dark state), the impedance of the photoconductive layer is kept constant so that no voltage may be applied to the liquid crystal layer.
The difference between the bright state and the dark state leads to forming an image data corresponding to the addressing light. The image data is allowed to be read by a reading ray of light.
This type of liquid crystal light valve may apply to a projection type display device, a coherent operating element, and so forth.
As another example, there has been proposed an addressing type liquid crystal light valve having a combination of the electric addressing system and the light addressing system. As disclosed in Japanese Lying Open No. 2-134617, a data signal in the electric addressing system is allowed to be transmitted by using a light signal.
The above-described electric addressing system liquid crystal light valve of a simple multiplex driving type is arranged to apply divided voltages on the pixels except display pixels. This known light valve hence has a disadvantage of lowering a display contrast. The time when a data signal used for controlling a display state is applied to the display pixels is a constant time defined by a duty ratio. For the remaining time, the data signal having no concern with the control of the display state is applied onto the display pixels. Hence, the liquid crystal disadvantageously responds to the data signal sent at a non-selecting time. To overcome these disadvantages, a method referred to as a voltage averaging method is generally used for the simple multiplex driving system having matrix electrodes.
However, the margin of an operating voltage in the voltage averaging method is made lower as the number n of scanning electrodes is increasing. In a case that the used liquid crystal material has constant electro-optical characteristics, the number n of scanning electrodes for holding a practical display quality is defined. Hence, the use of the voltage averaging method disadvantageously makes it possible to provide a higher resolution or a larger screen than that arranged for the held scanning electrodes.
Further, in the known electric addressing type liquid crystal valve, the resistance of wire and the capacitance cause a signal waveform to be delayed, resulting in being unable to realize a large device or a high-density device.
On the other hand, the known liquid crystal light valve of a light addressing system needs a CRT or an addressing light source such as a liquid crystal panel. This brings about a disadvantage that the overall device cannot be made reduced in size.
In the addressing system having a combination of the known electric addressing system and the known light radiation addressing system (see Japanese Lying Open No. 2-134617), the waveform of the data signal is converted into the change of light intensity and is written on the photoconductive layer. Hence, disadvantageously, it is necessary to provide a higher sensitive photoconductive layer which will be sensitive to a minute change of light intensity. And, the photoconductive layer has to have a quite uniform sensitivity distribution for uniformly displaying an image on the screen.

Liquid crystal light valve having capability of providing high-contrast image


Methods of manufacturing an adjustable bird slope are described. A height of the face of the bird slope can be altered as necessary so that the bird slope can effectively fit almost any perching area.

Some bird deterrents rely on a sloped surface to deter birds from alighting. In such instances the deterring aspect of the device is usually based on a combination of the degree of slope of the surface and the texture of the surface. One such device is taught in U.S. Pat. No. 3,626,906 to Voran et al. The '906 patent describes an egg guard for a poultry cage, which is sloped so that a bird would slide off it.
Another bird deterrent with a sloped surface is described in U.S. Publication No. 2002/0073633. That publication actually describes birds sliding off of the surface. U.S. Publication No. 2004/0194423 describes still other sloped devices.
All of these devices suffer from dimensional limitations; a bird must land on the sloped surface in order to be deterred. If the device is too small to cover the entire perching area, a bird will simply land along side of it. Consider, for example, a ledge of a building where birds are likely to perch. Such ledges can range considerably in size. A sloped bird deterrent that covers less than the entire space of the ledge is virtually worthless since birds can perch on the portion of the ledge that is not covered by the slope. At the same time, a sloped bird deterrent that is too large for a particular perch can be unsteady or at least will be aesthetically unpleasing.
The wide range of possible deployment surfaces and shapes creates considerable problem in manufacturing and distribution of sloped bird deterrent products. Thus, there is a need for a sloped bird deterrent that can be adjusted to fit a variety of different sized areas.


The individual cylinders of the internal combustion engine are divided into at least two cylinder banks wherein each is assigned a separate exhaust-gas channel. Secondary air is conveyed by a compressor. The flow of the secondary-air mass flow is set independently by an electrically controllable throughflow control. A value for the entire secondary-air mass flow is determined from the signal of a secondary-air mass sensor. The throughflow control is controlled into an open position, the value for the entire secondary-air mass flow is detected and subsequently the throughflow control is controlled into a closed position, the values for the secondary-air mass flows are detected before and after closure, and these values are compared with a plurality of different threshold values and, as a function of the result of the comparisons, a determination is made of the fault location with regard to the respective cylinder bank.

Three-way exhaust gas catalytic converters (hereinafter referred to as catalytic converters for simplicity) have proved their worth for a long time now as a means of reducing exhaust emissions in an internal combustion engine. In an internal combustion engine at normal operating temperature, up to 98% of the hydrocarbon, carbon monoxide and nitrogen oxide emissions can be converted by means of commercially available systems.
The emission behavior is unsatisfactory during cold starting and the immediately following warming-up phase of spark-ignited internal combustion engines, since at these times the catalytic converter and the lambda probe have not yet reached their operating temperatures.
A possible measure for improving the exhaust gas quality consists in introducing fresh air (referred to as secondary air) into the exhaust manifold close to the exhaust valves so that the exhaust gas constituents that were not combusted during starting due to a rich mixture are oxidized by afterburning at temperatures of up to 600° C. This exothermic reaction leads to an increase in the exhaust gas temperature and hence to a shortening of the warm-up or light-up time of the catalytic converter. The unburnt exhaust gas constituents are reduced at the same time.
A so-called secondary air pump is employed to introduce the secondary air. Said secondary air pump is an electrically driven compressor which draws in air from the environment and injects it into the exhaust gas tract close to the exhaust valves via secondary air lines into which a shutoff valve, which as a general rule is of the pneumatic type, is inserted.
The secondary air charger constitutes a powerful alternative to the electrically driven secondary air pump. Said secondary air charger consists of a turbine and a compressor, the turbine being driven by the pressure difference at the throttle valve in the intake tract. The compressor is disposed in a secondary air bypass to the throttle valve and delivers fresh air into the exhaust gas tract.
In internal combustion engines having a plurality of cylinders, e.g. 6, 8, or 12 cylinders, the cylinders are assigned to what are termed cylinder banks. In an 8-cylinder internal combustion engine, for example, the cylinders 1-4 are assigned to a first cylinder bank and the cylinders 5-8 to a second cylinder bank. In this arrangement each cylinder bank can be supplied with air by means of its own secondary air pump having associated secondary air lines or a single secondary air pump supplies both cylinder banks, in which case a line connected to the pump outlet then branches off and a secondary air line leads to each of the individual cylinder banks. This results in a bank-selective secondary air injection.
Since the secondary air system constitutes an exhaust-gas-relevant component within the motorized vehicle driven by means of the internal combustion engine, it must be checked for any faults that may occur. Future legislative measures (ARB, Air Resources Board, LEV II) provide that not only must the secondary air system as such, i.e. globally, be checked with regard to proper operation, but that in a system comprising a plurality of cylinder banks and consequently a plurality of secondary air paths, each individual subsystem must also be diagnosed and a bank-selective differentiation made in the event of a fault.
DE 41 20 891 A1 describes an internal combustion engine having a secondary air pump in which the delivery performance of the secondary air pump is monitored. Toward that end, the actual performance is compared with the desired performance at defined operating points.
DE 43 43 639 A1 discloses a method for monitoring a secondary air system wherein a first value is calculated which characterizes the secondary air stream blown into the exhaust gas channel of the internal combustion engine by the secondary air system. The first value is calculated from the air stream supplied to the internal combustion engine, from the air/fuel ratio of the mixture drawn in by the internal combustion engine and from the air/fuel ratio prevailing in the exhaust gas channel downstream of the secondary air line. The first value is compared with a predefined interval and in the event of a deviation a malfunction of the secondary air system is detected.
DE 197 13 180 C1 discloses a method for monitoring the secondary air mass flow of an exhaust gas purification system for an internal combustion engine. Secondary air is fed by means of a secondary air pump to an exhaust gas duct of the internal combustion engine upstream of an exhaust gas catalyzer, the measured signal of a secondary air mass meter being recorded. The variation in time of the measured signal is determined and a malfunction of the secondary air supply is detected if the variation does not correspond to a predetermined variation.
EP 0 928 366 B1 discloses a secondary air system for an internal combustion engine which has a secondary air pipe which is connected to an intake tract via an inlet orifice and to an exhaust gas tract via an outlet orifice. The inlet orifice is located downstream of an air mass meter measuring the air mass flowing into the cylinders of the internal combustion engine and upstream of a throttle valve. The secondary air system comprises a secondary air valve which is installed in the secondary air pipe and a control device with a monitoring unit which controls the degree of opening of the secondary air valve. The monitoring unit, which includes a physical model of the intake tract and the secondary air system, determines an estimated value of a secondary air mass flow as a function of the aperture angle of the throttle valve, the revolutions per minute, and a measured value of a first air mass flow determined by the air mass meter.
DE 196 09 922 A1 discloses a method for monitoring the secondary air injection in the case of an internal combustion engine having a measuring sensor for measuring the oxygen content in the exhaust gas. The method is based on the reaction of the measuring sensor to the switching-in of the secondary air, the volume of the air aspirated by the internal combustion engine being increased during the supply of air to the exhaust gas.
DE 102 49 421 A1 discloses a method for monitoring the delivery of secondary air to the exhaust gas of an internal combustion engine, wherein the internal combustion engine has at least two partially separate exhaust gas systems in each which are disposed an exhaust gas catalyzer and, upstream thereof, a lambda probe. A secondary air pump is provided which delivers the drawn-in secondary air initially via a single secondary air line containing an electrically controllable secondary air valve and which branches off downstream of the secondary air valve into a number of individual secondary air lines corresponding to the number of exhaust gas systems for the purpose of delivering secondary air to the respective exhaust gas systems. A value for the total air mass flow that is introduced into the exhaust gas systems is determined from the signal of at least one air mass meter. In order to determine the actual air mass introduced into the individual exhaust gas systems, the output signals from the lambda probes in the exhaust gas systems are referred to in order to identify an uneven distribution of the air mass supplied to the individual exhaust gas systems.
DE 100 65 963 A1 discloses an apparatus for supplying secondary air on an individual cylinder basis to the exhaust gas of an internal combustion engine, said apparatus having at least two partially separated exhaust gas pipes and a secondary air pump having secondary air conduits which connect the outlet side of the secondary air pump to one of the aforesaid separate exhaust gas pipes in each case. A separately controllable flow control means is provided in each of the said secondary air conduits. Additionally provided on the outlet side of the secondary air conduit is at least one further controllable opening whose opening state influences the pressure in the said secondary air conduits. A diagnosis of the individual secondary air conduits is not addressed.

Method for monitoring the secondary air system in an exhaust-gas purification system


An electrostatic image developing toner including: toner base particles each including a binder resin and a colorant; and an external additive, wherein the toner base particles each have protrusions on a surface thereof, an average of lengths of long sides of the protrusions is 0.1 μm or more but less than 0.5 μm, a standard deviation of the lengths of the long sides of the protrusions is 0.2 or less, a coverage rate of the protrusions on the surface of each toner base particle is 10% to 90%, and the external additive includes an external additive (A) which is fine inorganic particles each containing silicone oil.

Dry-process developing devices using a powdery developing agent have widely been employed in image forming apparatuses such as electronic copiers, printers and facsimiles, in which a latent electrostatic image formed on a latent image bearing member is visualized with a developer to obtain a recorded image.
In recent years, color image forming apparatuses using electrophotographic process have broadly been employed, and digitized images are easily available. Thus, it is required to make an image to be printed at higher definition. While studying higher resolution and gradation of an image, as an improvement of a toner which visualizes a latent image, it has been studied to further conglobate and minimize in particle size for forming the image at high definition. And, since in the toners produced by the pulverizing methods, their conglobation and minimization are limited, so-called polymerized toners produced by a suspension polymerization method, an emulsification polymerization method and a dispersion polymerization method capable of conglobtaining and minimizing in particle size have been being employed.
In the production method of polymerized toners, toner materials having relatively low resistance are localized in the vicinity of the surfaces of toner core particles. Thus, the formed polymerized toners have low chargeability to cause background smear. In addition, the polymerized toner has a small particle diameter and thus has increased adhesive force to members, thereby raising problems such as filming and a drop in transfer efficiency. Furthermore, the polymerized toner is highly spherical to cause cleaning failure.
In view of this, attempts have been made to modify the surfaces of toner core particles to solve the aforementioned problems. The method for surface modification is, for example, dry methods in which fine particles are made to adhere onto the toner surfaces by the action of mechanical impact, and wet methods in which a resin dispersing agent is added to a dispersion liquid containing toner particles dispersed in a solvent, wherein the resin of the resin dispersing agent is different from the resin forming the toner particles.
Regarding the dry methods, disclosed is a toner including toner base particles and fine particles embedded in the surfaces thereof, wherein the toner is produced by adding the fine particles to the toner base particles heated to a temperature near their softening point, followed by stirring and mixing (see PTL 1). Also, disclosed is a toner including fine resin particles and toner core particles which are covered with the fine resin particles by the action of mechanical impact (see PTL 2).
However, in these dry methods, the fine particles cannot be uniformly and sufficiently attached or adhered to the toner base particles and toner core particles. As a result, the fine particles are exfoliated from the toner base particles and toner core particles to cause problems such as filming and adhesion.
Regarding the wet methods, disclosed is a method in which the surfaces of toner core particles formed of first resin particles and a colorant are partially or totally covered with second resin particles (see PTL 3). However, according to this method, the toner core particles are covered with the second resin particles so sparsely and ununiformly that background smear and toner storage stability cannot be sufficiently improved, although cleanability is improved. In addition, degradation of transferability occurs.
Also, disclosed is a toner including toner core particles and convex portions with an average diameter of 100 nm to 500 nm which are provided on the surfaces of the toner core particles, wherein the toner core particles are covered with the convex portions at a coverage rate of 10% to 80% (see PTL 4). However, according to the production method described in Examples, the protrusions of the toner are not uniform in size, and thus the toner cannot solve problems such as background smear. The binder resin forming the convex portions has high polarity to greatly change depending on the environment and thus, is insufficient in improvement of heat resistance storage stability.
Also, disclosed is a method in which fine resin particles are added in advance to an aqueous phase for fusion to control the particle diameter (see PTL 5). However, in this method, the fine resin particles are incorporated into toner core particles, and as a result, the toner core particles cannot be covered with the fine resin particles in such an amount that heat resistance storage stability is improved.
Also, disclosed is a toner having a core-shell structure (see PTL 6), but in this toner, cores are totally covered with shell layers, leading to considerable degradation of fixing property.
In addition to the above-described surface modification, some attempts to solve these problems by appropriately selecting external additives have been made. In particular, there have been various proposals utilizing hydrophobicity and low surface energy of silicone oil.
For example, it is disclosed that qualities of both transfer and fixing are kept in a favorable balance by defining the silicone oil release rate of fine inorganic particles each containing silicone oil (see PTL 7). Also, there is disclosed fine silica particles treated with silicone oil and having two peaks in the particle size distribution thereof (see PTL 8). Also, it is disclosed to use as external additives aggregates of fine particles treated with silicone oil and fine inorganic particles (see PTL 9). Also, it is disclosed to use as external additives fine inorganic particles treated with silicone oil and fine inorganic particles treated with a silane coupling agent (see PTL 10). However, any of these methods is not sufficient to retain transferability and abrasion resistance for a long period of time in a wide range. Attachment of an excessive amount of an external additive would degrade fixability and also raise contamination of a released external additive.

Electrostatic image developing toner, image forming apparatus, image forming method, and process cartridge


The invention relates to a method of forming the inside wall of a support bearing of given height H and suitable for receiving a cylindrical portion of a cylindrical element for co-operating with the inside wall, said method comprising the steps of estimating a deflection f taken up by the cylindrical element between the center and one of the ends of the support bearing, estimating a nominal radius R using the relationship R=H2/8f, determining an inside wall for the support bearing that occupies a toroidal surface having a throat diameter equal to a diameter of the cylindrical element, ignoring predetermined clearance, and having a meridian radius lying in a range of ±15% about the nominal radius R, and machining the support bearing in such a manner that its inside wall occupies the toroidal surface as determined in this way.

Most support bearings present an inside wall that is cylindrical. Such support bearings are entirely suitable so long as the bending stiffness of the cylindrical element and/or the load to which the cylindrical element is subjected lead to deformation of the cylindrical element that is negligible relative to the macroscopic dimensions of the support bearing.
When the cylindrical element is more flexible, or when it is subjected to higher loading, the deformation of the cylindrical element is no longer negligible and the cylindrical element then comes to bear against the support bearing in one or more zones of small area, thereby considerably increasing the pressure that is applied locally to the cylindrical element. Under such conditions, the cylindrical element bears on the end of the support bearing, which gives rise to marking on the cylindrical element due to deterioration of its surface coating. This phenomenon leads to a degraded surface state for the cylindrical element which can give rise to the initiation of fatigue cracks.
To solve this problem, proposals have already been made for support bearings having cylindrical inside walls that present chamfers at at least one of the ends of each inside wall. Such support bearings provide a certain amount of improvement over support bearings having inside walls that are purely cylindrical.
Proposals have also been made to give the inside wall of the support bearing a surface that is not cylindrical, but that bulges.
Various types of surface have been considered, and formulae have been proposed for determining the parameters of such surfaces as a function of geometrical data as the height of the support bearing or the diameter of the cylindrical element.
Those formulae have the drawback of taking no account of the stiffness characteristics of the cylindrical element or of the loading actually applied thereto.
To fill out the technical background, reference may be made to U.S. Pat. Nos. 4,396,170, 3,969,029, 4,136,582, and 4,688,808.

Method of forming an inside wall of a bearing for supporting a cylindrical element


A solid state image sensing device includes an MOS transistor T2 that has a source thereof connected to a drain of an MOS transistor T1 being provided with a transfer gate which is connected to an embedded photodiode PD; an MOS transistor T5 that has a gate thereof connected to the drain of the MOS transistor T1; and a condenser that has a source thereof connected to the MOS transistor T5. When a linear conversion operation is performed in an entire range of luminance, the MOS transistor T2 works, serving as a switch for resetting, and at least when a logarithmic conversion operation is performed in a part of the range of luminance, the MOS transistor T2 works in a sub-threshold region.

1. Field of the Invention
The present invention relates to a solid state image sensing device including pixels that produce electric signals corresponding to incident light. In particular, the present invention relates to a solid state image sensing device including pixels each of which consists of transistors.
2. Description of the Prior Art
Solid state image sensing devices that are used for various applications can be classified into two main types according to a method to read out/take out photo-charges that are generated in photoelectric conversion elements: CCD type of solid state image sensing devices and CMOS type of solid state image sensing devices: The CCD type of solid state image sensing devices transfer the photo-charges while storing them in potential wells, thereby making a dynamic range thereof narrow, which is disadvantageous to the CCD type of solid state image sensing devices. On the other hand, the CMOS type of solid state image sensing devices directly read out the photo-charges, which are stored in a "pn" junction capacitance of a photodiode, by way of an MOS transistor.
In addition, one of conventional CMOS types of solid state image sensing devices performs a logarithmic conversion operation which converts an amount of incident light by a logarithmic conversion. (See the U.S. Pat. No. 2,836,147.) This solid state image sensing device has a wide dynamic range having five to six digits. Therefore, although an image of a subject having a luminance distribution of a slightly wide range of luminance is sensed, the solid state image sensing device can convert entire luminance information in the luminance distribution into an electric signal so as to be outputted. However, since a region where image sensing is possible becomes larger than the luminance distribution of a subject of an image sensing, there may be generated such an area as has no luminance data in a low luminance range or a high luminance range within the region where the image sensing is possible.
The present applicant has disclosed such a CMOS type of solid state image sensing device as can switch over between a logarithmic conversion operation and a linear conversion operation that are mentioned above. (See the U.S. Pat. No. 3,664,035.) In addition, in order to automatically switch over between the linear conversion operation and the logarithmic conversion operation, the present applicant has disclosed such a CMOS type of solid state image sensing device as sets a potential state of a transistor being connected to a photodiode performing a photoelectric conversion operation to be in an appropriate state. (See the Japanese Patent Application No. 2002-300476.) A solid state image sensing device in accordance with the Japanese Patent Application No. 2002-300476 can change over an inflection point, at which the photoelectric conversion operation is switched over from a linear conversion operation to a logarithmic conversion operation, by changing a potential state of a transistor.
Additionally, in order to reduce dark currents of a solid state image sensing device, such a solid state image sensing device is disclosed as employs an embedded photodiode. (See the Japanese Patent Application 2006-050544.) A solid state image sensing device in accordance with the Japanese Patent Application 2006-050544 comprises an embedded photodiode PD that serves as a photosensitive element; an MOS transistor T1 that has a source thereof connected to a cathode of the embedded photodiode PD; an MOS transistor T2 that has a source thereof connected to a drain of the MOS transistor T1: an MOS transistor T3 that has a gate thereof connected to a connection node between the drain of the MOS transistor T1 and the source of the MOS transistor T2; and an MOS transistor T4 that has a drain thereof connected to the source of the MOS transistor T3.
Then, a direct current voltage VPS is applied to an anode of the photodiode PD and back gates of the MOS transistors T1 through T4, and direct current voltages VRS and VPD are applied to the drains of the MOS transistors T2 and T3, respectively. In addition, signals φTX, φRS and φV are supplied to the gates of the MOS transistors T1, T2 and T4, respectively, and an output signal line 14 is connected to the source of the MOS transistor T4. Moreover, the MOS transistors T1 through T4 are N-channel MOS transistors.
As shown in FIG. 19, a pixel being constructed as described hereinabove comprises an embedded photodiode PD that is constructed by forming a P type layer 20 on a surface of a P type well layer 31 being formed on a P-type substrate 30 so as to have an N type embedded layer 21 buried therein; a transfer gate TG that is provided with a gate electrode 23 being constructed by way of an insulation film 22 on a surface of a region neighboring a region where the embedded photodiode PD is constructed; an N type floating diffusion layer FD that is formed in a region neighboring a region where the transfer gate TG is constructed; a reset gate RG that is provided with a gate electrode 25 being constructed by way of an insulation film 24 on a surface of a region neighboring the N type floating diffusion layer FD; and an N type diffusion layer D that is formed in a region neighboring a region where the reset gate RG is constructed.
In the above-mentioned condition, a P type layer 20 of high density is formed on a surface of the N type embedded layer 21 in the embedded photodiode PD. In addition, the MOS transistor T1 comprises an N type embedded layer 21, an N type floating diffusion layer FD, and a transfer gate TG; and the MOS transistor T2 comprises an N type floating diffusion layer FD, an N type diffusion layer D, and a transfer gate RG. Then, by having an embedded photodiode PD constructed in a pixel in such a manner as described hereinabove, a potential on a surface of the P type layer 20 is fixed to a potential which is same as a potential of a channel stopper layer that consists of a the P type layer surrounding the embedded photodiode PD. Moreover, the N type floating diffusion layer FD has the gate of the MOS transistor T3 connected thereto.
By having a configuration of a circumference of the embedded photodiode PD constructed so as to achieve a configuration as shown in FIG. 19, it is possible to suppress dark currents that are generated on a surface of the circumference of the embedded photodiode PD and to reduce dark currents that are generated in a pixel. In addition, in a signal output circuit which is installed in a subsequent stage of a pixel, a correlation double sampling method can be employed, and thereby, noises can be eliminated. Due to the above-mentioned effects, a solid state image sensing device employing an embedded photodiode PD is expected to be a dominant solid state image sensing device of low noise and high sensitivity.
In addition, in a pixel having such components as shown in FIG. 19, by having a gate voltage of a gate electrode 23 determining a potential state in a transfer gate TG become a midpoint potential, it is possible to switch over an operation between a linear conversion operation that changes an electric signal in a linear manner for an amount of incident light and a logarithmic conversion operation that changes an electric signal in a logarithmic manner for an amount of incident light. FIG. 20A shows a relation of potentials among an embedded photodiode PD, a transfer gate TG and an N type floating diffusion layer FD in a pixel in the above-mentioned condition.
When a light falls on the embedded photodiode PD, a photo-charge is generated. Therefore, the potential of the embedded photodiode PD decreases in accordance with photo-charges that are generated. At this time, when a luminance of a subject of image sensing is low, the potential appearing to the embedded photodiode PD becomes proportional to an integration value of the amount of incident light in a linear manner. Additionally, when a luminance of a subject of image sensing is high, the potential of the embedded photodiode PD becomes low; and when a difference thereof from the potential of the transfer gate TG comes close to a threshold value, the control gate TG works in a sub-threshold region, whereby an electric current flows from the embedded photodiode PD. Then, as shown in FIG. 20A, the potential appearing to the embedded photodiode PD varies so as to be proportional to a logarithmic value of an electric current that is generated by a photoelectric conversion.
When the potential of the embedded photodiode PD varies in accordance with the amount of incident light as described hereinabove, by setting a gate voltage of the gate electrode 23 to be at a low level, the potential of the transfer gate TG comes to take a low value as shown in FIG. 20B, and thereby, the potential of the embedded photodiode PD is maintained as shown in FIG. 20B. After that, a voltage of the potential of the embedded photodiode PD being maintained is transferred to the N type floating diffusion layer FD by way of the transfer gate TG, and additionally, an electric signal due to the voltage being transferred is outputted as an image signal.
However, in a solid state image sensing device including a pixel having a configuration as shown in FIG. 18, in a case where an image signal is produced by having a linear conversion operation performed, a photo-charge that is generated in the photodiode PD by the incident light is stored, and an image signal that is integrated is outputted even though an integrating circuit is not provided therein. On the other hand, in a case where an image signal is produced by having a logarithmic conversion operation performed, an image signal corresponding to a value at a moment when the MOS transistor T1 is turned off is outputted, in spite of a change in the amount of incident light during a period of exposure. As described hereinabove, an image signal that is integrated and converted in a linear manner or an image signal that is converted in a logarithmic manner without being integrated is outputted from a pixel having a configuration shown in FIG. 18. Therefore, compared with a signal at the time of a linear conversion operation having an integrating constituent, a degree of variability of a signal is high, and it is easy to receive effects of noises.
In consequence, at the time of a long-time exposure and the time of a speed light photography when a change in the incident light is likely to occur, there arises a problem that an information on a subject of image sensing cannot be obtained correctly in a case where an image signal being converted in a logarithmic manner is produced, like a case where the luminance of a subject of image sensing is high. In addition, in a case where the image signal being converted in a logarithmic manner is produced, there arises a problem that a flicker occurs for a luminance fluctuation of an illumination.

Solid state image sensing device which performs a linear conversion operation and a logarithmic conversion operation