A resonator element includes a piezoelectric substrate including a vibrating section and a thick section having a thickness larger than that of the vibrating section. The thick section includes a first thick section provided along a first outer edge of the vibrating section, a second thick section provided along a second outer edge, and a third thick section provided along a third outer edge. A first inclined outer edge section that is inclined with respect to both of an X axis direction and a Z′ axis direction is provided in a corner section of the piezoelectric substrate where the second thick section and the third thick section are connected to each other.

1. Technical Field
The present invention relates to a resonator element, a resonator, an oscillator, an electronic apparatus and a moving object.
2. Related Art
An AT-cut quartz crystal resonator element exhibits a thickness shear vibration in a vibration mode of main vibration for excitation. Since the AT-cut quartz crystal resonator element is suitable for miniaturization and increase in frequency and provides a cubic curve having an excellent frequency-temperature characteristic, the AT-cut quartz crystal resonator element is used in various apparatuses such as a piezoelectric oscillator and an electronic apparatus.
JP-A-2002-198772 discloses an AT-cut quartz crystal resonator element having an inverted mesa structure that includes a thin vibrating section and a thick section provided around the entire periphery of the vibrating section. The AT-cut quartz crystal resonator element is fixed to a package through an adhesive agent in one end portion of the thick section. In a state where the AT-cut quartz crystal resonator element is cantilevered, if an acceleration in a thickness direction is applied to the AT-cut quartz crystal resonator element, a tip section (the vibrating section) is deformed, which causes a problem in that a vibration characteristic (frequency characteristic) is not stable. In particular, in the AT-cut quartz crystal resonator element disclosed in JP-A-2002-198772, since the thick section is formed over the entire periphery of the vibrating section and the weight of the tip section is heavy, the influence on the acceleration is large, and accordingly, the amount of frequency deviation is also increased. Here, in order to reduce the deformation of the tip section (vibrating section), a method of increasing the thickness of the thick section to enhance the rigidity may be considered. However, if the thickness of the thick section increases, the accuracy of formation of the vibrating section in wet etching is decreased, which causes a problem in that a vibration characteristic of an obtained resonator element does not reach a predetermined characteristic.

Resonator element, resonator, oscillator, electronic apparatus, and moving object


A moist multi-colored food product is prepared by mixing meat and meat-by-product materials and cereal, fat and water ingredient materials to obtain a base mixture, pumping the base material mixture to an emulsifier device and supplying a coloring solution to the emulsifier device and emulsifying the base material mixture and coloring solution to obtain a colored material mixture emulsion, passing the colored emulsion to a distribution valve which is connected to a plurality of parallel piping lines connected in series to extruders to pass differing colored emulsions to the extruders for extrusion and deposit onto a conveyor for conveying through a steam oven, and to obtain the differently colored product, a first coloring solution is delivered to the emulsifier device for a time, the colored emulsion is passed to the distribution valve and to one piping line and one extruder in series and then after that time, a differently colored solution is delivered to the emulsifier device to obtain a differently colored emulsion, the distributing valve is controlled to deliver the differently colored product to a second piping line and extruder in series to obtain a second differently colored product from the second extruder.

The present invention relates to preparation of multi-coloured food products and particularly to products which are prepared with mixing and emulsification procedures and with an extrusion procedure.
European Patent Application Publication No. 0 265 740 already relates to a process for preparing pieces, in which a meat emulsion is prepared by subjecting it to a heat treatment allowing coagulation of the proteins present. To obtain the coagulation, a certain content of proteins is required, which increases the cost of the starting raw materials.

Preparation of a multi-colored food product with a process which includes extrusion


The present disclosure provides a fuselage of an unmanned aerial vehicle. The fuselage comprises an upper plate, a lower plate opposite to the upper plate, a connecting plate, and a middle spacing plate; the connecting plate is connected between the upper plate and the lower plate; the upper plate, the lower plate, and the connecting plate are enclosed to define a receiving space; the upper plate, the lower plate, the connecting plate, and the middle spacing plate are integrally formed; the upper cavity is located between the middle spacing plate and the upper plate, and the lower cavity is located between the middle spacing plate and the lower plate; and a first mounting opening is defined in the upper plate allowing a component to enter the upper cavity, and a second mounting opening is defined in the lower plate allowing a component to enter the lower cavity.

1. Technical Field
The present invention relates to aircrafts, and particularly, to an unmanned aerial vehicle, a fuselage thereof, and a method for manufacturing the fuselage.
2. Description of Related Art
At present, an unmanned aerial vehicle is capable of performing various kinds of reconnaissance and supervision tasks by mounting a visible light camera, a motion picture camera, a standard or low-light level television camera, an infrared scanner, and radar on a housing thereof, therefore, the unmanned aerial vehicle is applicable in fields including security, reconnaissance, and forest fire prevention. However, the unmanned aerial vehicle has following drawbacks: the housing generally includes a front housing and a rear housing which are secured together by a large number of screws, which greatly increases the weight of the unmanned aerial vehicle and affects the flying performance of the unmanned aerial vehicle;
moreover, it is inconvenient to assemble and disassemble the housings, making the maintenance and replacement of the component inside the housing troublesome; in addition, signal shielding between two modules inside the housing is weak and interference is generally produced between the modules, which affects the quality of the signal transmission of each module and may even affects the flying safety of the unmanned aerial vehicle; furthermore, the arrangement of the modules inside the housing is unreasonable, preventing the space of the housing from being utilized reasonably.

Unmanned aerial vehicle and fuselage thereof and method for manufacturing the fuselage


A fixing belt includes an inner layer, serving as a sliding layer, in which filler particles having an aspect ratio of 5 or more are oriented substantially in the longitudinal direction of the fixing belt.

1. Field of the Invention
The present invention relates to fixing belts, fixing devices, and methods for manufacturing fixing belts.
2. Description of the Related Art
Japanese Patent Laid-Open Nos. 63-313182 and 2-157878 propose fixing devices including a fixing belt with low heat capacity that provides a short startup time.
Such fixing devices include a heating element fixed and supported inside the fixing belt. This heating element tends to degrade the inner surface of the fixing belt as the fixing belt slides over the heating element. After extended use, this may result in self-induced vibration, which is called stick-slip, and an increased torque required to rotate the fixing belt.
Accordingly, Japanese Patent Laid-Open No. 2001-341143 proposes a fixing belt including an inner layer having the surface thereof roughened to improve the sliding resistance thereof.
This technique, however, is insufficient because the roughened surface is effective only at an early stage of use; the asperities wear gradually during extended use and will eventually almost disappear.
Accordingly, Japanese Patent Laid-Open No. 2009-251253 proposes a fixing belt including an inner layer containing filler particles such as molybdenum disulfide, carbon, or diamond-like carbon to improve the sliding resistance thereof.
Although this technique provides more durable asperities on the inner layer, it is insufficient in view of the increasing process speed and durability of image-forming apparatuses in recent years.

Fixing belt, fixing device, and method for manufacturing fixing belt


The present invention relates to a method of preparing a pressure-sensitive adhesive comprising the steps of:                (i) providing an essentially solvent-free mixture comprising one or more free radically polymerizable monomers having one ethylenically unsaturated group and at least one free-radical polymerization initiator,        (ii) partially polymerizing said mixture to provide a partially polymerized mixture exhibiting a Brookfield viscosity of between 1,000 and 125,000 mPa·s at 20° C. and a degree of conversion of monomers to polymer of between 30-60 wt. % with respect to the initial mass of the monomers prior to polymerization,        (iii) adding one or more free-radical radiation polymerization initiators to the partially polymerized mixture to provide a radiation-curable precursor,        (iv) applying the radiation-curable precursor to a substrate, and        (v) further polymerizing the radiation-curable precursor by subjecting it to actinic irradiation to provide said pressure-sensitive adhesive.

The present invention relates to a method of preparing a pressure-sensitive adhesive comprising providing a coatable partially polymerized radiation-curable precursor of the adhesive and applying the precursor to a substrate with subsequent further polymerization.
Pressure-sensitive adhesives can be applied to a substrate as pre-cured adhesive tapes which may be die-cut to the required shape. While this technique is convenient for many technical applications and does, in particular, usually not require any in-situ curing step, it may be disadvantageous in other technical applications for the following reasons:                Double-coated adhesive tapes usually require the use of one or more release liners which have to be discarded upon application of the adhesive tape. When die-cutting the adhesive tape to the desired shape, the excess tape has to be discarded as well.        Especially in the electronics industry the shapes of the substrates to be adhered tend to get smaller and more complicated so that the die-cutting of the adhesive tape tends to become more difficult and technically demanding.
U.S. Pat. No. 4,181,752 discloses a process for the preparation of a normally tacky pressure-sensitive adhesive comprising subjecting a suitable radiation-sensitized solventless liquid mixture containing as a major proportion thereof at least one acrylic acid ester of an alkyl alcohol containing from 4-14 carbon atoms, and at least one monomer copolymerizing therewith to prepolymerizing conditions to form a relatively viscous partially polymerized mixture or syrup in which about 5-10% of the monomers have been converted to polymers, applying said partially polymerized mixture to a substrate in a thickness of up to about 1.9 cm in thickness and subjecting it to radiation in the near UV-region at a rate of from 0.1-7 mW/cm2 of the partially polymerized mixture exposed.
The further polymerization of the partially polymerized mixture of U.S. Pat. No. 4,181,752 is carried out in an inert atmosphere such as N2, CO2, He or Ar which is disadvantageous for various practical applications. The method of forming the partially polymerized mixture used in U.S. Pat. No. 4,181,752 provide a coatable viscosity of the partially polymerized mixture only at low degrees of conversion of the monomers to polymers of typically less than about 10%. Due to the low degree of conversion of the monomers to polymer the further polymerization of the partially polymerized mixture requires the application of UV-irradiation with a relatively high energy density which may damage, for example, a substrate the partially polymerized mixture is applied to. If the degree of conversion of the monomers to polymers is increased, the viscosity of the partially polymerized mixture tends to become very high rendering the mixture non-coatable. It was also found that if the degree of conversion of monomers to polymer is increased, the resulting partially polymerized mixture tends to gel and/or become inhomogeneous.
It was a desire of the present invention to provide a method of preparing a pressure-sensitive adhesive comprising the preparation of a partially pre-polymerized coatable radiation-curable precursor with subsequent further polymerization to a pressure-sensitive adhesive with advantageous properties which does not exhibit the drawbacks of previously known methods or exhibits such drawbacks to a limited degree only. It was another desire of the present invention to provide a coatable radiation-curable precursor of a pressure-sensitive adhesive which can be polymerized in a non-inert atmosphere.

Method for preparing a pressure-sensitive adhesive


This present invention extends the mechanism for locating solution access information and then obtaining and implementing the correct solution for updating software programs. The user can communicate with one system on the network, tell it what the user is interested in, and then the system replies on a file by file basis where to locate the desired information. Thus, the user no longer has to register, e.g. in the environment variables, the individual paths for where a multitude of different applications find their additional related information on the network. According to the teachings of the present invention, a user will have to make basically zero changes to the system, and instead will automatically discover the name location of a server that is going to provide the user with the information associated with any user executable file.

While software is being developed and after it is deployed, it is often important to have access to information related to the executable software that is not stored as part of the executable. This includes, but is not limited to, debug information produced by the development tools like compilers and linkers, the source code from which the executable is generated, instructions for tools that process the executable in some way, patches to transform an executable to another version, and the output of tools that get made available for use by other tools.
For groups developing or deploying software, getting access to this information can be difficult or time consuming. Every time the software is updated, the associated information is usually updated and the updates made available. In a development environment, this can be as often as several times a day. Some common mechanisms used to handle this today are to copy the information to the computer where the software is installed and rely on default search mechanisms for tools that need it to find this information, to set environment variables to point to a location on the local computer or a network server where the information resides and to update these environment variables whenever the software is updated, to patch the executable files that comprise the software to point to the location where the information resides, or for tools to assume that the information can be found locally and to prompt the user to enter the correct location when the information cannot be found. All of these require either extra steps to be taken whenever software is updated or for some individual to have knowledge where to find the information that is needed.
For software deployment scenarios in particular, though this can also apply to development and other uses, all the information is not needed all the time so requiring the information to be copied locally is unnecessary. It is also impractical in many cases. For example, for Windows 2000 the symbolic debug information for all the executables is in excess of three gigabytes. It is not necessary to have all this information available all the time just so the fraction that is needed can be available when it is needed.
Updating environment variables every time the software is updated is time consuming and error prone. The more distinct software packages installed, the more effort involved and the greater the likelihood of error.
As new types of information are introduced, any scripts and/or processes to update the client systems to locate information need to be updated to include the new types further increasing the cost of keeping the client system updated.
For the reasons stated above and for other reasons which will become apparent from reading and studying the present disclosure, systems and methods are needed which extend the mechanism for locating solution access information, e.g. information related to an executable, including more accurately pinpointing the solution access information, and then obtaining and implementing the correct solution for updating software programs.

Abstract: In particular, one embodiment of the present invention includes a computer implemented method. The method includes querying a first server for a location of a second server containing information associated with a local file. The method further includes querying the second server for the information associated with the local file. The second server then provides the information associated with the executable. Other systems and methods are included within the scope of the present invention.


A dishwasher and a method for controlling the same are provided. The dishwasher includes a contamination level sensor that measures a contamination level of washing water in a washing tub of the dishwasher. The method includes supplying washing water to an inside of the dishwasher, washing dishes by spraying the washing water to the inside of the dishwasher, temporarily pausing the washing of the dishes for a preset time period, and resuming the washing of the dishes after the preset time period.

1. Field of the Invention
The present invention relates to a method for controlling a dish washer, and more particularly, to a method for controlling a dish washer, in which a contamination level sensor is made to measure a contamination level of a washing tub, accurately.
2. Discussion of the Related Art
In general, the dish washer is provided with a case which forms an exterior thereof, and a washing tub for holding dishes to be washed. The washing tub is provided with a spray arm for spraying washing water to the dishes, and a sump for supplying and collecting the washing water. The washing tub also provided with a washing pump for pumping the washing water from the sump to the spray arm, and a water supply valve connected to a water supply hose for closing/opening the washing water flowing to/from the washing tub.
The washing tub may also be provided with a drain pump for pumping the washing water collected in the sump after finishing washing to an outside of the dish washer, an air guide for making air in the washing tub to be in communication with air outside of the washing tub during water supply, and a water level sensor for sensing a water level of the washing tub.
Moreover, in order to measure a contamination level of the washing water, a dirt chamber may be provided, which is in communication with the sump, and a contamination level sensor may be provided thereto for measuring the contamination level.
The operation of the dish washing will be described.
If the washing water is supplied to a preset level, a controller applies to close the water supply valve.
At the same time with stopping of the water supply, the washing pump is put into operation, to pump the washing water from the sump to the spray arm, and the spray arm sprays the washing water to the dishes held in the washing tub, thereby carrying out a washing course.
In the meantime, the contamination level sensor at the dirt chamber measures the contamination level of the washing water for carrying out an optimum washing course. However, during the washing course is carried out, since the washing water forms a vortex as the washing water passes the contamination level sensor, scattering of signals from the contamination sensor is large, such that the controller fails to determine an accurate value of the contamination level sensor, causing difficulty in carrying out an optimum washing course.


A method of attaching inner leads to the metal electrodes of an integrated-circuit die, in which the tips of the inner leads are pressed onto the metal electrodes by a heated bonding tool. The heat of the bonding tool softens the tips of the inner leads, enabling the inner leads to be directly pressure-welded to the metal electrodes, without the need for intervening soft metal bumps.

The present invention relates to a method of attaching inner leads to the metal electrodes of a semiconductor integrated-circuit die.
Conventional methods of inner-lead attachment employed in tape-automated bonding, for example, make use of bumps of a soft metal such as gold, which are formed on either the metal electrodes or the inner leads themselves. While these soft metal bumps facilitate the bonding of the inner leads to the electrodes, the formation of the bumps is an expensive process requiring separate equipment and extra labor, and the technology of bump-formation takes time to learn. The bump-formation process thus adds significantly to the cost of the completed semiconductor device.

Bumpless method of attaching inner leads to semiconductor integrated circuits


Methods (100, 200, 250) and data processing system (300) for automatically placing ties (136, 138, 146, 148) and connection elements within an integrated circuit (120). Integrated circuit dimensions (102), element locations and element dimensions (104), and tie placement rules (106) are received for a particular integrated circuit (120). The quantities are then processed to place ties within the integrated circuit (108). Tie placement rules include tie spacings (164, 166), well edge spacings (162), and diffusion spacings (168) to prevent SCR latch up and gate threshold voltage drift. Tie placement methods (100, 200) automatically place ties within the integrated circuit (120) to comply with tie spacing rules and also consider estimated compactions so that tie numbers are minimized. Associated data processing system (300) and computer readable medium operate in conjunction with the methods of the present invention. A method of making an integrated circuit (350) optimally places ties and connection elements within an integrated circuit design.

In the construction of an integrated circuit, the designer must compensate for operational difficulties that may arise for the particular construction of the integrated circuit. Typical operational difficulties include excessive current drain, substrate power up, localized heat generation beyond a limit, and other problems that are not apparent in the design of the integrated circuit but that are critical to the operation of the integrated circuit. These operational difficulties, of course, are affected by the physical design of the integrated circuit made from a logical design, the size of the integrated circuit, the process used to construct the integrated circuit, and the manner in which the integrated circuit is operated.
With particular reference to FIG. 1, a typical CMOS transistor 10 may include N-channel transistors 12 and P-channel transistors 14. The transistors 12 and 14 are connected such that they implement particular logic functions or portions of logic functions within an integrated circuit. Each N-channel transistor 12 includes a source 16, a gate 18, and a drain 20 while each P-channel transistor also includes a source 22, a gate 24, and a drain 26.
The N-channel transistor 12 is turned on by applying a voltage exceeding a threshold voltage to the gate 18. Once turned on, the N-channel transistor 12 conducts from its source 16 to its drain 20. Alternatively, the P-channel transistor 14 is turned on by applying a voltage lower than a threshold to its gate 24. Once the transistor is turned on, the P-channel transistor also conducts from its source 22 to its drain 26.
As is shown, when a P-type substrate 30 is used as the base for the integrated circuit, each P-channel transistor 14 is constructed within an N-type well 28 formed in the P-type substrate 30. The use of an N-type well 28 is required to prevent a direct short between the source 22 and substrate. Silicon controlled rectifier ("SCR") latch-up occurs when a forward bias exists at the substrate/well junction. Upon SCR latch-up, the integrated circuit ceases to function properly and consumes large quantities of power. To prevent SCR latch-up between the P-type material of drain 26, the N-type material of the well 28, and the P-type material of the substrate 30, the N-well 28 is tied to a first voltage reference level or V.sub.DD. In this fashion, SCR latch-up is prevented by fixing the potential of the N-type well 28 at the first reference voltage V.sub.DD.
Fixing the well 28 at the first reference voltage V.sub.DD also guarantees that the threshold gate voltage that must be applied to the gate 24 to turn the P-type transistor 14 on will remain constant during operation of the integrated circuit. Because the relative voltage differential between the gate 24 and the N-well 28 determines whether, and how rapidly, the inversion layer between the source 22 and the drain 26 will invert, the voltage differential must be controllable. The application of a voltage to the source 22 or the drain 26 affects the potential of the N-well 28. Thus well ties 32 along the N-type well 28 also serve to fix the voltage of the N-well 28 and ensure that the gate voltage threshold will remain constant. As shown, well ties 32 may be made directly between the source V.sub.DD and the N-well 28 or may be made between the source V.sub.DD and a more highly doped region 36 within the N-well structure.
With the N-channel transistor 12 as well, a voltage applied to the source 16 or drain 20 may alter the voltage of the substrate 30. In such a situation, if the voltage of the substrate 30 is not fixed, the gate threshold voltage required to turn on the N-channel transistor 12 through its application to the gate 18 will vary. Thus, substrate ties 34 are commonly used to fix the voltage potential of the substrate 30 at a reference potential V.sub.SS. As shown, the substrate ties may be made directly to the substrate 30 or may be made to a more highly doped portion of the substrate 35.
The placement of ties within integrated circuits has typically been left up to the circuit designer who generates the physical design of the integrated circuit. Thus, the application of ties has been inconsistent and iterative alterations in their placement between the production of mask sets are sometimes required to enable a correct operation of the integrated circuit. Even when the placement of ties does not cause operational difficulties which must be fixed at a later time, the application or placement of ties within an integrated circuit has been a tedious and difficult process because of the various design rules that influence tie placement. The integrated circuit will have smaller dimensions when the ties are properly placed because properly placed ties allow for more efficient compaction.
The placement of other elements within a physical integrated circuit is also difficult and their improper placement causes operational difficulties within the integrated circuitry. For example, the placement of vias between a first layer and a second layer may interrupt signal paths within both the first layer and the second layer. While the proper placement of a via may increase a highest frequency of operation of the digital circuit, the placement of vias is often left up to the designer and does not include an automated process. Further, in an integrated circuit, antenna diodes are often used to reduce charge induced damage within the integrated circuit. While the antenna diodes reduce charge induced damage, their placement within the integrated circuit is difficult for the same reasons as is the placement of vias. Integrated circuit dimensions will also be reduced upon an efficient placement of vias due to increased compaction efficiencies that are possible.
Thus, there exists a need in the art for a method and apparatus for the automatic placement of ties and connection elements within integrated circuits based upon design rules.

Apparatus and method for automatically placing ties and connection elements within an integrated circuit


A method for producing a bonded body of ceramic and metal bodies includes stacking a ceramic body, metal body, gap layer capable of preventing oxidation and hindering heat conduction, first intermediate layer and second intermediate layer with the gap layer between the ceramic body and the metal body in the stacking direction. The first intermediate layer is between the ceramic body and gap layer, and the second intermediate layer is between the gap layer and metal body, linear expansion coefficients of the first and second intermediate layers being between those of the ceramic body and the metal body. Diffusion bonding is performed between the ceramic body and the first intermediate layer, and between the metal body and the second intermediate layer simultaneously. The gap layer is then removed from between the first and second intermediate layers. The first and second intermediate layers are then bonded to each other.

1. Technical Field
The invention relates to a method for producing a bonded body by using diffusion bonding.
2. Related Art
A bonded body of a ceramic body made from a ceramic material and a metal body made from a metal material is used in, for example, an electrically heated catalytic converter (EHC), a temperature sensor element and a ceramic heater etc.
In such a bonded body, the ceramic body and the metal body are bonded to each other using various bonding methods.
For example, Patent document 1 (Japanese patent application publication No. 2012-76937) discloses a bonded body made by brazing the ceramic body and the metal body with a brazing material therebetween. However, since the brazing material has a comparatively low melting point, when the bonded body is used under a high temperature environment such as inside an exhaust pipe of the a vehicle, creep resistance of the brazing material becomes a problem, and the allowable working temperature of the bonded body is limited.
Patent document 2 (Patent application publication No. 2005-343768) discloses a bonded body made by heating the ceramic body and the metal body to perform diffusion bonding. This method allows diffusion layers at the interfaces of the ceramic body and the metal body to form, which causes bond portions of both bodies to have higher melting points. Accordingly, when the bonded body is used under high temperature environment, heat resistance can be secured adequately.
If diffusion bonding between the ceramic body and the metal body is performed simply, however, there is the following problem.
That is, a thermal expansion coefficient of a ceramic material composing a ceramic body is generally smaller than that of a metal material composing a metal body. Accordingly, if the bonded body is used under a high temperature environment, heat stress (tensile stress) due to the difference between the heat expansion coefficients of the metal body and the ceramic body occurs in the ceramic body, this might cause damage such as cracks to occur in the ceramic body or the bond portions of both bodies.
For solving this problem, the following method is possible. That is, between the ceramic body and the metal body, an intermediate layer whose thermal expansion coefficient is between those of the ceramic body and the metal body is provided, thereby decreasing the heat stress due to the difference between the ceramic body and the metal body. Diffusion temperatures, however, might be different between diffusion bonding of the ceramic body and the intermediate layer and diffusion bonding of the metal body and the intermediate layer. In this case, keeping each bond portion at a respective diffusion temperature is needed.


A system and a method are disclosed for configuring hosts of virtual machines. The system and method include receiving, by a management server, a network configuration of a first host, wherein the first host is associated with a network identified by a network label, storing the network configuration of the first host in a template record, in response to a request to configure a second host, determining if the second host is to join the network identified by the network label, and configuring the second host using the template record.

Virtualization in information processing systems allows for multiple instances of one or more operating systems to run on resources (or components) of a hosting computing device ("host"). Virtualization is typically implemented by using software (e.g., a virtual machine monitor, or a "VMM") to present to each OS a "virtual machine" ("VM") having virtual resources, including one or more virtual processors, that the OS may completely and directly control, while the VMM maintains a system environment for implementing virtualization policies such as sharing and/or allocating the physical resources among the VMs (the "virtualization environment"). Each OS, and any other software, that runs on a VM is referred to as a "guest" or as "guest software," while "host software" is software, such as a VMM, that runs outside of, and may or may not be aware of, the virtualization environment.
VM(s) may run on one or more hosts. Further, each of the VM(s) may run under a respective OS which may or may not be different from the OS of another VM. Resources of the one or more hosts may need to be configured for the VM(s). For example, the network interfaces (NICs) of the one or more hosts may be configured by a network administrator through a user interface.

Host connectivity templates to configure host of virtual machines


In an aspect, a sunroof assembly is provided for a vehicle, and comprises a sunroof panel, a final gear and a drive arm. The sunroof panel has a longitudinal axis and which is mounted to the vehicle for longitudinal movement between an open position and a closed position. The final gear is mounted to a stationary member of the vehicle, and is pivotable about a pivot axis between a first position and a second position. The drive arm is pivotable with the final gear about the pivot axis and which has a drive end that is laterally movable relative to the sunroof panel but that is operatively connected to the sunroof panel to drive the sunroof panel longitudinally between the open and closed positions during pivoting movement of the final gear between the first and second positions.

Vehicle sunroofs are well known in the art. The drive system for some sunroofs incorporates a spiral cable and a worm gear. In some cases, such drive systems involve a relatively large number of components. Additionally the components that make up a drive system for a certain size of sunroof are typically not all able to be used for the drive system of a different size of sunroof. For example, the spiral cables may have unique lengths for each size of sunroof produced by a sunroof drive system manufacturer. There is little standardization on sunroof dimensions; each make and model of vehicle typically has a sunroof having unique dimensions. As a result, a sunroof drive system manufacturer may keep a large number of different inventory items in stock in order to be ready to manufacture sunroof assemblies on tight production schedules for a range of models of vehicle. The large number of inventory items ties up money and complicates production. Furthermore, the large number of parts that are involved in manufacturing the sunroof drive assembly can reduce the reliability of the assembly. It would be advantageous to provide a sunroof drive assembly that at least partially addresses one or more the above problems.


An improved welding method is provided for repairing rotating shafts, particularly cracked high pressure steam turbine rotors. The welding method preferably employs a 2.25Cr--1.0Mo--0.3V-type welding filler metal, preferably deposited using a narrow groove automatic gas tungsten arc welding technique. A narrow groove is formed in the rotor to remove the crack. The groove is preheated, filled with the welding filler metal, and postheated, resulting in a strong, high temperature resistant, long lasting weld.

Large rotating shafts are used in many applications, such as turbines, fans, and pumps. The use in turbines often exposes them to environments and load cycling which can lead to cracking. Examples of use in the electric utility industry are high and intermediate pressure steam turbines, boiler feed pump turbines, and gas turbines.
High and intermediate pressure steam turbines are commonly used by modern electric utility companies for the purpose of driving generators to produce electric power. In order to operate safely and effectively, the components of the steam turbines, including the rotors, discs, blades, and stationary diaphragms are typically fabricated from heavy structural alloy steels of the chromium-molybdenum type. The high pressure steam turbines generally operate at temperatures higher than about 500.degree., however, certain components of the steam turbine are exposed to even higher operating temperatures. The hottest component of a steam turbine is typically the first stage of the rotor. During normal operation, sections of the rotor are typically exposed to temperatures higher than 850.degree. F., are often exposed to temperatures about 900.degree. F., and can be exposed to temperatures as high as 1050.degree. F.
The useful life of the various steel-fabricated steam turbine components depends heavily on the thermal stresses endured by the components. Because the rotors are typically exposed to much higher temperatures than the other components, the rotors tend to be susceptible to creep damage. In particular, the high temperature regions of the high pressure steam turbine rotors have increased susceptibility to cracking due to long-term thermal fatigue and creep from power plant load cycling. Similar damage, such as gouging, can occur from mechanical interference between the rotor and stationary components. In the past, the damaged rotor components have simply been replaced. However, replacement of the rotors requires very high capital costs and very long lead times for procurement.
An alternative approach which is currently used is to discard only the section of the rotor which is exposed to temperatures above 850.degree. F., including an appropriate portion surrounding the high temperature region, and replacing the discarded section with a new forging that can be welded to the remaining portion of the older rotor in a lower temperature region. In order for this approach to be successful, the replaced section of the rotor must be large enough to include both the high temperature region (i.e., above 850.degree. F.) and enough of the surrounding region that the weld can be made in an area where the operating temperature does not exceed about 850.degree. F. This conventional welding approach includes the use of a filler metal which cannot withstand prolonged exposure to temperatures higher than about 850.degree. F.
The filler metal used in the above-mentioned conventional welding approach is composed of about 0.12 weight percent C, 0.4-0.7 weight percent Mn, 0.4-0.7 weight percent Si, 0.025 weight percent P, 0.025 weight percent S, 0.20 weight percent Ni, 2.3-2.7 weight percent Cr, and 0.9-1.2 weight percent Mo. This conventional filler metal is commonly known as a 21/4 Cr-1Mo filler metal. The disadvantage of the conventional welding approach is that it represents an expensive repair program even if only minor cracking is observed in the high temperature region of the high pressure steam turbine rotor. Also, long lead times are often required for procurement of the replacement forgings.
Methods of repair in which a wide groove is machined in the rotor shaft to remove a crack and the groove is filled with weld metal are well known in the art. The wide groove may be semi-circular with a radius deep enough to fully remove the crack, or may be machined with straight walls and a large angle of greater than 24 degrees between opposing walls. The wide groove method requires a large amount of weld filler metal, increasing the welding time and chance of distortion. The large weld area also increases the chance of weld defects.
Various other welding filler metals are also known in the art for different high temperature applications. U.S. Pat. No. 4,994,647, issued to Tanaka et al., discloses welding deposit materials intended for use in high temperature applications (e.g., 482.degree. C. or 900.degree. F.). The disclosed uses are boilers, pressure vessels and chemical reactors. The reference teaches that 2.25-3% Cr--1% Mo steels are unsatisfactory for application to pressure vessels which are used under such high temperature and pressure conditions, such as required in a coal liquefaction plant. However, increased strength and increased resistance to hydrogen attack are imparted by adding V and Nb to the covered electrode.
U.S. Pat. No. 4,503,129, issued to Okuda et al., discloses a shielded metal arc welding electro for chromium-molybdenum low alloy steels. The reference states that chromium-molybdenum low alloy steels, including 2.25Cr--1Mo steel, are widely applied industrially as materials of high heat resistance in the fields of boilers of high temperature and pressure, petroleum industry, synthetic chemistry, and for uses requiring resistance to hydrogen of high temperature and pressure. The reference discloses a welding core wire and/or flux containing chromium and molybdenum, as well as carbon, manganese, silicon, aluminum, nitrogen and nickel. The reference further discloses that at least one element selected from vanadium, titanium, niobium and boron, can be added to the welding flux and/or the core wire to improve high temperature strength.
An article by Kim, et al. entitled "Weldability Studies In Cr--Mo--V Turbine Rotor Steel", Journal Of Materials Engineering, Vol. 10, No. 2, 1988, discusses a study undertaken to establish the weldability of a high pressure steam turbine rotor constructed using 1.0Cr--1.0Mo--0.25V steel. The reference discusses the performance of a post weld stress relief heat treatment to prevent cracking of the weld zone during subsequent exposure to elevated temperature service, and to restore its notch toughness. The reference discloses that a 2.25Cr--1Mo filler wire was used in the production of welds. After welding, and heat treatment, impact tests were performed on the weld specimens. The article concluded that postweld heat treatment at 1050.degree. F., caused a reduction in impact properties. On the other hand, postweld heat treatment at 1250.degree. F. caused some improvement in impact properties.
U.S. Pat. No. 4,897,519, issued to Clark et al., discloses a method for repairing worn surfaces of Cr--Mo--V steam turbine components which focuses on the use of a ferrous welding metal including about 4.00 to 19.0 weight percent chromium, 0.43 to 2.1 weight percent molybdenum, 0.09 to 0.5 weight percent vanadium, 0.03 to 0.20 weight percent niobium, 0.0 to 0.08 weight percent aluminum, 0.0 to 0.20 weight percent copper, 0.005 to 0.06 weight percent nitrogen, 0.04 to 0.22 weight percent carbon, 0.15 to 1.0 weight percent manganese, 0.15 to 1.0 weight percent silicon, 0.0 to 0.2 weight percent phosphorous, 0.0 to 0.016 weight percent sulfur, 0.0 to 0.8 weight percent nickel, and the balance iron. The alloy is welded to the worn surface of the turbine component using gas tungsten arc welding, plasma arc welding, electron beam welding, laser beam welding, or gas metal arc welding. The disclosed method is for repairing worn surfaces and no mention is made of repairing rotor shaft cracks.
U.S. Pat. No. 4,903,888, issued to Clark et al., is also directed toward a method for repairing worn surfaces of turbine rotors, including high pressure turbine rotors. A first layer of weld metal is deposited on a worn surface of a turbine component. Then, a second layer of weld metal is deposited over the first layer, using a higher application (weld heat input) temperature, for tempering at least part of the heat-affected zone created in the base metal by the depositing of the first layer.
U.S. Pat. No. 5,049,716, issued to Dunmire et al., discloses methods for providing erosion resistant surfaces to carbon steel turbine components. The surface is welded with a first weldment including steel having at least 12 weight percent chromium. The weldment is deposited on the carbon steel surface at a high rate of welding speed of about 24-52 inches per minute, in a first pass thickness of less than about 0.1 inches.
There is a demand among electric power utilities for a welding method which can be used to repair cracked high pressure steam turbine rotors without requiring extensive down time, capital expenditure, or replacement of rotor sections. It is important that the repair weld be able to meet or exceed the mechanical properties of the rotor base material, during and after long-term exposure to temperatures within the range of about 850.degree. F. to about 1050.degree. F. It is believed that such a welding method could extend the operating life of high pressure steam turbine rotors for an additional 10 to 20 years, resulting in savings of millions of dollars to electric utility companies.


Cone beam volume CT breast imaging is performed with a gantry frame on which a cone-beam radiation source and a digital area detector are mounted. The patient rests on an ergonomically designed table with a hole or two holes to allow one breast or two breasts to extend through the table such that the gantry frame surrounds that breast. The breast hole is surrounded by a bowl so that the entire breast can be exposed to the cone beam. Spectral and compensation filters are used to improve the characteristics of the beam. A materials library is used to provide x-ray linear attenuation coefficients for various breast tissues and lesions.

1. Field of the Invention
The present invention relates to the use of cone beam volume computed tomography (CBVCT) in breast imaging and in particular to improvements therein that make better use of the radiation from the radiation source, the data output by the detector, or both. Throughout the present disclosure, it will be understood that references to breast imaging (mammography) are illustrative rather than limiting, as the invention is broadly applicable to breast imaging in general.
2. Description of Related Art
Breast cancer represents a significant health problem. More than 180,000 new cases are diagnosed, and nearly 45,000 women die of the disease each year in the United States.
The clinical goal of breast imaging is to detect tumor masses when they are as small as possible, preferably less than 10 mm in diameter. It is reported that women with mammographically detected, 1-10 mm invasive breast carcinoma have a 93% 16-year survival rate.
Conventional screen film mammography is the most effective tool for the early detection of breast cancer currently available. However, mammography has relatively low sensitivity to detect small breast cancers (under several millimeters). Specificity and the positive predictive value of mammography remain limited owing to an overlap in the appearances of benign and malignant lesions. Limited sensitivity and specificity in breast cancer detection of mammography are due to its poor contrast detectability, which is common for all types of projection imaging techniques (projection imaging can only have up to 10% contrast detectability). The sensitivity with which conventional mammography can identify malignant tumors in the pre-clinical phase will largely be affected by the nature of the surrounding breast parenchyma. Detection of calcifications will be influenced to a lesser degree by the surrounding tissue. The perception of breast masses without associated calcification, representing the majority of tumors in patients with detected carcinomas, is greatly influenced by the mammographic parenchymal pattern. Thus conventional mammography is often not able to directly detect tumors of a few millimeters due to poor low contrast resolution. Conventional mammography requires ultrahigh resolution (50-100 μm/pixel) to image microcalcifications to compensate for its poor contrast resolution. Mammography fails to initially demonstrate 30%-35% of cancers. In addition, not all breast cancers detected with mammography will be found early enough to cure. At best, it appears that conventional mammography can reduce the death rate by up to 50%. This is an important gain, but there is considerable room for improvement in early detection of breast cancer.
Relatively low specificity of mammography results in biopsy for indeterminate cases despite the disadvantages of higher cost and the stress it imposes on patients. There is a need for more accurate characterization of breast lesions in order to reduce the biopsy rate and false-positive rate of biopsy.
There are several radiological or biological characteristics of breast carcinoma that can be imaged. First, carcinoma has different x-ray linear attenuation coefficients from surrounding tissues, as shown in FIG. 1. Second, carcinoma has a substantially higher volume growth rate compared to a benign tumor which lacks growth. Third, carcinoma has patterns distinguishable from those of a benign tumor. Fourth, benign tumors show different contrast enhancement after intravenous contrast injection. Fifth, the presence of neovascularity can indicate cancer. Conventional mammography relies mainly on the first characteristic and partially uses the third characteristic for breast cancer detection. Since mammography is a two-dimensional static imaging technique, it cannot provide any information regarding characteristics 2, 4, or 5.
Currently, radiological evaluation of breast cancer is important not only for early detection of disease, but also for staging and monitoring response to treatment. So far, conventional screen film mammography has been shown to be the most cost-effective tool for the early detection of breast cancer currently available. The specificity and positive predictive value of mammography, however, remain limited, owing to an overlap in the appearances of benign and malignant lesions and to poor contrast detectability, which is common for all projection imaging techniques. Projection imaging can have only up to 10% contrast detectability. Biopsy is therefore often necessary in indeterminate cases, despite the disadvantages of higher cost and the stress it imposes on patients. There is therefore a need for more accurate characterization of breast lesions in order to reduce the biopsy rate.
In the last decade, MRI of the breast has gained a role in clarifying indeterminate cases after mammography and/or ultrasound, especially after breast surgery and in detecting multifocal breast cancers. However, the integration of MR into routine clinical practice has been hampered by a number of limitations, including long scanning times and the high cost of MR examinations. Additionally, many patients cannot undergo MR because of MR contraindications (e.g., aneurysm clips, pacemaker) or serious claustrophobia.
Characterization of breast lesions on MR has been based largely on the differential rates of enhancement between benign and malignant lesions. The constant trade-off between spatial and temporal resolution in MR has made it difficult to achieve the spatial resolution necessary for improved lesion detection and characterization.
Standard fan beam computed tomography (CT), including spiral CT, has been evaluated as a potential tool for the characterization of breast lesions. Most previous work has been based on the traditional or helical technique using the whole body scanner. That technique, however, suffers from a number of disadvantages including significantly increased radiation exposure due to the fact that standard CT can not be used to target only the breast, so that the majority of x-rays are wasted on whole body scanning. That leads to relatively low in-plane spatial resolution (typically 1.0 lp/mm), even lower through plane resolution (less than or equal to 0.5 lp/mm in the direction perpendicular to slices), and prolonged volume scanning times, since spiral CT scans the whole volume slice by slice and takes 120 seconds for the whole breast scan. It still takes 15-30 seconds for the latest multi-ring spiral CT for 1 mm/slice and 12 cm coverage.
Ultrasound has poor resolution in characterizing lesion margins and identifying microcalcifications. Ultrasound is also extremely operator dependent.
In addition, for conventional mammography, compression is essential for better low-contrast detectability. However, patients are uncomfortable even though compression may not be harmful to them.
The above-cited parent patent application teaches the use of cone beam volume computed tomography (CBVCT) for breast imaging, called cone beam volume CT breast imaging (CBVCTBI) technique. The patient lies on a table with a breast hole through which the breast to be imaged extends. A gantry frame rotates a radiation source and a detector around the breast. However, because of the relative positioning of the radiation source and the table required to achieve the volume scan, the radiation source may be positioned so low relative to the table that the entire breast may not lie within the cone beam (half cone beam). Also, it would be helpful to compensate for the shape of the breast while minimizing discomfort for the patient and to analyze efficiently the signals corresponding to various kinds of breast tissues and lesions. Furthermore, it would be helpful to increase sensitivity of detecting small breast cancer without raising patient dose levels or to reduce patient dose level without compromising image quality of CBVCTBI.

This patent is subject to a terminal disclaimer.

Apparatus and method for cone beam computed tomography breast imaging


Process for sterilizing a contact lens using an aqueous solution of a sterilant which may be a peroxygen disinfectant, an inorganic hypochlorite compound or a hypochlorite precursor compound. The process involves the steps of contacting the lens with the aqueous solution for a period of time sufficient to effect sterilization of the lens; and thereafter contacting the resultant aqueous solution and lens with an amount of activated carbon and for a period of time sufficient to decompose substantially all of any residual sterilant to ophthalmologically innocuous by-products.

Processes for sterilization of contact lenses are well known in the prior art. Typically such processes employ aqueous solutions of sterilants such as H.sub.2 O.sub.2 present in a concentration of 1-5 wt. %, together with adjuvants such as chelating agents (e.g. ethylenediaminetetraacetic acid), buffering agents such as alkali metal phosphates, alkali metal borates, alkali metal carbonates and mixtures thereof, etc.
After a contact time sufficient to disinfect the lens, the residual sterilant must be neutralized, i.e. converted into ophthalmologically innocuous by-products, since even traces of the sterilant remaining on the lens will result in irritation to the eye and concomitant discomfort to the contact lens wearer.
The most common method for neutralizing H.sub.2 O.sub.2 involves the use of a thin film of platinum on a plastic substrate, as disclosed in U.S. Pat. No. 3,912,451. Such prior art process suffers from several disadvantages. Firstly, this process is quite expensive, owing to the use of platinum. Of course, the device may be reused a number of times (up to a maximum of .about.100 times), but frequently the user continues to use the device well after the recommended maximum number of times, either because of inadvertence or to try to achieve further cost savings. Moreover, the decomposition rate of the H.sub.2 O.sub.2 is non-reproducible and will gradually diminish, thus affording a lack of certainty as to the continued effectiveness of the device. Finally, there is also the need to dispose of an envirormentally unfriendly material, i.e. platinum coated on a plastic substrate, since the device is not readily recyclable.
The prior art also teaches that chemical reducing agents, e.g. sodium thiosulfate, may be used to neutralize the residual H.sub.2 O.sub.2, see A. R. Gasset et al., Arch. Ophthalmol., vol. 93, June, 1975, pp. 412-415. It is also known to utilize a controlled-release sterilant system utilizing sodium percarbonate, see U.S. Pat. No. 4,863,627. However, such techniques are disadvantageous in that they introduce foreign substances which cause a change in the osmotic pressure of the ophthalmological solution and also a severe burning sensation in the eye or even irritation to the ocular tissue may result.
It is also known to use aqueous solutions of inorganic hypochlorites, i.e. alkali and alkaline metal hypochlorites as the sterilants for contact lenses together with reducing agents to neutralize the residual hypochlorite, see U.S. Pat. Nos. 3,717,580 and 4,167,561, Canadian Patent 1,087,955 and U.K. Patent 2,094,922.
U.S. Pat. No. 4,976,921 extends the concept of hypochlorite sterilants to compounds which are hypochlorite precursors, e.g. Chloramine-B, Chloraraine-T, Dichloramine-T, Halazone, chlorinated cyanuric acid, etc. It is taught that various reducing agents may be used to neutralize the residual hypochlorite precursors, e.g. sodium thiosulfate, .alpha.- and .beta.-hydroxy-carboxylic acids such as glycolic, malic, citric, lactic, tartaric, ascorbic, etc.
In many of the systems which employ slow-release inorganic hypochlorite or hypochlorite precursor compounds, a continuous loss of hypochlorite occurs which then entails higher concentrations of hypochlorite than otherwise needed. Such a situation may readily result in misuse by the consumer. Moreover, animal studies have shown that the use of hydroxy-carboxylic acids in the reduction of hypochlorites indicate that the reaction between these reactants produce physiologically irritating and perhaps toxic oxidation by-products, thereby limiting the usefulness of this method. In addition, all presently known methods of reducing hypochlorites bring about a concurrent change in the tonicity of the resulting aqueous solution, thereby causing discomfort to the contact lens wearer.


System for the chemical/physical treatment of a fluid in which a distributor valve has been installed for the feed/discharge of fluid to/from various reactors. The distributor valve consists of a plate valve with stationary plate and rotary plate. A cylindrical body provided with a number of axial bores that change into radial bores and emerge in the wall of a stationary housing adjoins the rotary plate and rotates therewith. A number of inlets/outlets located one after the other viewed in the axial direction are provided on the stationary housing. According to the invention the various radial bores in the cylindrical body are provided with a fluid via axial bores, based on a single valve plate.

The present invention relates to a system for the chemical/physical treatment of a fluid according to the preamble of Claim 1.
Such a system is disclosed in WO 02/30570. In this publication a construction is described consisting of a rotary cylindrical body that also has the function of a rotary valve plate. For this purpose measures are taken on sides, being in the axial direction opposite, of the rotary cylindrical body, as a result of which it is possible to supply a fluid in the axial direction. There are axial bores in the cylindrical body that change into radial bores. These radial bores emerge at the wall of the cylinder. This cylinder wall is accommodated in a housing in a sealed manner and corresponding bores are made in this housing. Lines that are connected to a feed/discharge and/or reactors join onto both the stationary valve plates and the bores in the housing.
The aim with such a construction is always to provide various reactors with a changing fluid stream. All sorts of processes can be carried out by this means and in general these always involve regeneration of the reactors.
In the state of the art constructions are known where the reactors are constructed as columns that are arranged on a rotary frame. With this arrangement there is always a valve plate construction.
Using a construction as described in WO 02/30570 only the cylindrical body has to turn and rotation of the columns is no longer necessary, as a result of which an appreciable simplification can be obtained with, as a consequence, a saving in costs and freedom in positioning and design of reactors.
However, it is not easily possible to address a large number of reactors with the construction according to WO 02/30570. After all, in the embodiment shown the fact of the matter is that it is impossible or virtually impossible to achieve complete sealing of the construction. A large number of surfaces perpendicular to one another must be sealed with respect to one another, which, although it may be theoretically possible, in practice will always be beset with difficulties. According to this WO 02/30570 publication, increasing the number of reactors that can be connected is achieved by making feed/discharge openings in the stationary/rotary valve plate in the radial direction at various distances from the centre of rotation. However, if it is desired to keep the size of such a valve plate down and the complexity thereof may not be too great, it will not be possible to employ such a solution when using a larger number of columns.
GB 761 690 describes a distributor valve provided with two plate parts or end plates with axial feed openings that merge into radial channels. These radial channels all emerge axially at the same level. Furthermore, orifices of channels that are connected internally and do not emerge at a plate part or end plate are made in the cylinder wall. A corresponding construction as far as functioning is concerned is shown in U.S. Pat. No. 2,600,099.
The aim of the present invention is to provide a system that does not have these disadvantages and with which it is possible to address a larger number of columns with a single distributor valve.
This aim is realised with a system as described above having the characterising features of Claim 1.


A device and method for expediting the repair of laminated automobile glass, comprising a supporting bridge removably mountable to a windshield surface over a damaged area, with a receptacle for receiving an injector or dispenser for UV curable repair resin, and guide means between said bridge and dispenser comprised of a guide pin and a guide groove with linear and helical portions. The resin dispenser can be quickly aligned, inserted into place and sealed against the windshield with only a partial twist. The dispenser includes a manually operable plunger which partially defines an expandable chamber to hold UV curable repair resin and provide a means of controllably applying vacuum or pressure to the resin and damaged cavity, valve means to allow selectable control of air to be released from or allowed into said chamber to facilitate creation and application of vacuum or pressure, further including means to lock the plunger in multiple selectable positions to maintain applied vacuum or pressure. Integrated ultra high intensity UV LED's surround the damaged area and apply sufficient intensity UV to fully cure the repair and surfacing resin without the use of any barrier film.

The present invention is directed to improved repair of damaged laminated automotive glass, such as a windshield, in a fast and economically viable manner. Millions of automotive windshields are cracked every year from small stones impacting the windshield at speed, commonly leaving impact damage which is roughly coin-sized, round or star-shaped with numerous small cracks radiating from the point of impact. Such damage is often referred to as a "bullseye" or "star-break."
Windshield repair in lieu of replacement has been known for more than 40 years, however new technology and methods have made great improvements in quality of repair and time spend to perform repairs. It has become common to repair such damage by injecting a curable clear liquid repair resin to completely fill the cracks of the damaged area and placing a layer of "finishing" or "surfacing" resin, sometimes referred to as "pit filler," over the injected resin to provide a smooth and level repaired surface matching that of the surrounding undamaged glass. Curing the resins in place creates an area which is optically and structurally similar to undamaged glass, thus avoiding the need to replace the entire windshield.
The injected repair resin is usually of very low viscosity to facilitate complete penetration into the fine cracks and crevices of the damaged glass, while the surfacing resin is typically of high viscosity to prevent it "running" or flowing away from the repair area while filling and leveling the damaged area and replacing any missing glass fragments.
UV curable acrylic resins, which harden as the result of a photochemical process upon exposure to ultraviolet light, have become the de facto standard for such repairs. Such UV curable resins provide the advantage of control of the curing time, both to avoid premature curing during placement of the resin and to allow immediate initiation of curing once the resin is placed. This can ensure greater efficiency and profitability for a repair technician and minimize any delay in returning the vehicle to use.
However, despite having the benefit of controllability, the commonly used UV curable resins typically have the disadvantage of being "air-inhibited" or "moisture inhibited," which causes the surface layer of a liquid resin exposed to air or atmospheric moisture to remain partially uncured. Because of such characteristics, it has become a common and mandatory practice to place a tab or strip of a Mylar (polyester) to cover the surfacing resin and serve as a barrier to prevent its exposure to air or moisture to ensure complete and final curing.
U.S. Pat. No. 3,562,366 to Sohl discloses an early example of a method of injecting clear resin for in-situ windshield repair describing a curing time of hours for the resin.
U.S. Pat. No. 3,765,975 to Hollingsworth describes a method involving the application of vacuum or pressure to a repair area by manual operation of a syringe plunger without providing any means for locking the device to retain either pressure or vacuum.
U.S. Pat. No. 3,993,520 to Werner, disclosing a device for repairing glass, describes manually adjustable screw actuators to select the application of alternating vacuum and pressure cycles to accomplish the removal of entrained air from the broken area.
U.S. Pat. No. 8,268,104 to Campfield describes methods to overcome the air or moisture inhibited characteristics of acrylic repair resins by incorporation of cationic epoxy resins.
Applicants' prior U.S. Pat. No. 8,378,315 to Wanstrath et al discloses a resin injector support bridge incorporating a source of UV radiation.
In performing repair of a windshield or similar glass structure it is desirable to have a device which can be set up and operated simply, quickly and accurately. The present invention provides several novel improvements over the devices and methods previously used by providing a device and method to simplify, control and expedite the repair process. The device providing a resin injector assembly which is compact, mechanically simple and durable. The device expedites the steps of device setup, application of multiple vacuum and pressure cycles to ensure completely filling a damaged cavity with repair resin, controlling the duration of such cycles, and further controlling the final curing of the repair resin. The device incorporates an integrated high intensity UV source which provides the novel benefit of allowing cure of air inhibited UV curable repair resin without the need for an air or moisture barrier film or other material.

Device and method for the repair of laminated autoglass


The present invention relates to method for revaluing a phone card by way of an electronic commerce terminal system. The method comprise the steps of: communicating transaction data from the phone card to a universal server, with the universal server retrieving further user identification from a database based on a dynamic identification interchange within the universal server; evaluating the validity of the transaction data at the universal server; processing the transaction data and the first form and/or the further form of the user identification information; identifying the at least one user account; requesting and transferring funds either between a first one of the at least one user account and a second one of the at least one user account or between the at least one user account and the phone card to increase the value of the phone card, based on the dynamic identification interchange within the universal server.

The growth of the Internet has created a new way to buy, sell, trade, and barter goods and services worldwide. This new form of buying, selling, trading, and bartering may commonly be referred to as electronic commerce or e-commerce and or electronic business or e-business. The process of conducting these types of transactions can be called an electronic commerce transaction, electronic business transaction, e-commerce transaction, or e-business.
In addition, as more business gain access to the Internet the way businesses conduct business may also change. This new form of conducting business on the Internet can be referred to as electronic business, or e-business.
As more individuals and businesses gain access to and or develop a presence on the Internet more goods and services can be made available and offered to buy, sell, trade, and or barter. Resultant from rapid growth trends in Internet usage, e-commerce transaction and e-business transaction trends may also be increasing.
Prior to recent Internet, e-mail, e-commerce, and e-business trends many companies might have been able to manage business information processes including dissemination of timely information, order processing, and customer support. Traditional businesses including accounting, operations, sales departments, and order fulfillment departments might have been able to expand equally in harmony with new customer generation and increased business sales volume.
A factor in growing and expanding a business equally as well as in managing balanced growth of a company may have been the fact that until the introduction of the Internet traditional advertising means (print, radio, television, etc.) reached limited selected market places. Reaching selected market places in a controlled approach could allow a company to tailor ramping up for increased order processing, order fulfillment, customer service and or increased ways and opportunities for relevant information to be distributed and otherwise be made available.
The dynamics of the Internet can be that a company with an Internet presence, ready or not, can have a worldwide presence overnight to millions of potential customers and shortly thereafter be inundated with orders, customer service issues, merchandise returns, and order fulfillment requirements. The work load may force some companies into a position of being unable to support certain individual and customers needs—at anytime, all the time, anywhere.
In general, the Internet can offer exposure to many millions of potential customers worldwide simultaneously. The result can be receipt of more orders, news, and or information requiring processing, disbursement, and or fulfillment then a company can reasonably handle. This can result in poor performance on the part of the order recipient to timely meet business and customer needs. In many cases this could cause alienation and ultimate loss of a valued or potential business partners, and or customers.
As individuals become more reliant on the Internet for e-mail, e-commerce and e-business the demands for access to the Internet may increase. In addition, to the buying, selling, trading, and bartering supported on the Internet other services vital to daily business may also be performed online.
For example, Internet banking, stock and security trading, and e-mail and e-business communication may also be a growing functional need of the Internet. Unfortunately only individuals with access to computers that have Internet connectivity can use these services. In large part this may limit the access to Internet services since many potential users might only have access to an Internet capable computer at home or at a place of employment. Even if a computer with Internet access is available the opportunity to surf through tens of thousands of Internet web sites may require more time than is available or may be an inappropriate use of time (as may be common in the work place environment).
Additionally, a computer with Internet access may be too foreboding in time and or skill required from a potential user in finding the appropriate web site, identifying the goods or services desired, and ultimately conducting an e-mail, e-commerce, or e-business transaction. Furthermore, the potential lack of security of sensitive credit card and transaction information, and other sensitive data may be a real threat in discouraging potential users from performing e-commerce transactions. Thus a potential customer may become scared, and or frustrated choosing not to partake in e-mail, e-commerce, or e-business transactions all together.
There are numerous problems for Internet based businesses (referred to as virtual companies or virtual businesses) in that increased competition on the Internet may see their growth diminish. The barrier to entry of a virtual company can be little more than a computer hooked to the Internet. As more web sites appear selling similar products, a virtual company's ability to differentiate itself from other virtual companies may diminish. Head-to-head competition may shrink profit margins, potentially jeopardize an entire business enterprise. In addition, web based business may struggle to uniquely identify themselves—after all most if not all virtual companies exist on web pages, and web pages only.
In addition to virtual companies having to compete with other virtual companies, virtual companies have to compete with brick and mortar type companies. Brick and mortar type companies may be referred to as physical companies. Physical companies are companies with physical locations that the public can access.
Physical companies may have several advantages over virtual companies. For example, in many cases physical companies can see their competition coming after them by monitoring and counting the competitions physical locations. Furthermore, it is much easier for a company with physical locations to expand by developing an Internet business, then it is for a virtual company to expand by buying or building physical locations.
A number of deficiencies support the long felt need of the present invention including the inability of many companies to meet the information distribution and availability demands of businesses and individuals with respect to e-mail, e-commerce, and e-business. In addition, the demands for access to Internet services to timely conduct business and personal related transactions, as well as a wide variety of e-mail, e-commerce, and e-business type transactions can result in user dissatisfaction, late or incorrect information, lost opportunities, and or lost sales to name a few.
Deficiencies and shortcomings resulting from limited access to computers that have Internet access or connectivity may restrict access to virtual companies. In addition, the lack of Internet access available to everyone prevents a large contingent of potential customers from conducting e-mail, e-commerce, and e-business transactions with virtual companies.
Deficiencies and shortcomings of virtual companies include a lack of ways to differentiate themselves among competing rival virtual companies as well as brick and mortar type physical companies. In addition, the inability of the virtual companies to generate physical point of presence in the public may make virtual companies susceptible to competition from physical companies that decide to diversify by developing a competing virtual business.


In a memory readout circuit for use in a phase-change memory device comprising phase-change elements as memory cells, a sense amplifier sets readout voltage, which is applied to a selected phase-change element selected among the phase-change elements by a column selecting switch, to voltage equal to or higher than hold voltage of the selected phase-change element but lower than transition voltage of the selected phase-change element in a readout cycle. The selected phase-change element is read out as a dynamic state in the case where the selected phase-change element is in a set state.

The present invention relates to a phase-change memory and, in particular, to a readout circuit for use in the phase-change memory.
A semiconductor memory includes a volatile memory which loses memory information when power supply is turned off and a nonvolatile memory which retains memory information even when power supply is turned off. For example, the volatile memory is a Dynamic Random Access Memory (DRAM) or a Static Random Access Memory (SRAM), while the nonvolatile memory is an Electrically Erasable Programmable Read Only Memory (EEPROM) or a flash memory. In a recent mobile information terminal, for the purpose of miniaturization and power saving, the flash memory which retains memory information even when power supply is turned off is commonly used.
However, higher performance and/or higher functionality is desired as a recent mobile memory. As a mobile memory, in addition to large capacity, fast access such as a Double Data Rate (DDR) system, multiple bits of a data bit width, and low power consumption for ensuring battery life are required. Thus, a phase-change memory using a phase-change material comes to the front, and its development proceeds. The phase-change memory is a nonvolatile memory using two different phase states of the phase-change material as memory information. A chalcogenide material (such as Ge, Sb and Te) is used as the phase-change material.
FIG. 1 shows a memory cell of a phase-change memory. The memory cell is constituted from a phase-change element GST made of a chalcogenide material (such as Ge, Sb and Te), and a selection transistor C1 for selecting a memory cell. One terminal of the phase-change element GST is connected to a bit line BL of the memory cell, while the other terminal thereof is connected to a drain of the selection transistor C1. A source of the selection transistor C1 is connected to GND, while a gate thereof is connected to a Row selection signal VG. The selection transistor conducts an electric current therethrough in response to the Row selection signal VG, whereby a writing/reading operation is carried out via the bit line BL.
The phase-change element GST uses a property that a chalcogenide material (such as Ge, Sb and Te) becomes either an amorphous state (high resistance) or a crystal state (low resistance) by applying heat thereto. By controlling applied voltage and applied time, the chalcogenide material is changed between a high resistance (reset) state and a low resistance (set) state by means of Joule heat generated by a current. The state where the phase-change element GST becomes a amorphous state to present high resistance is referred to as a "reset state", while the state where the phase-change element GST becomes a crystal state to present low resistance is referred to as a "set state". The phase-change element GST made of a chalcogenide material becomes low resistance at the crystal state, while it becomes high resistance at the amorphous state. The phase-change element GST is a memory element that uses a state difference as memory information. This phenomenon was discovered by Stanford Ovshinsky. Now, the phase-change element by the designation of Ovonic Unified Memory (OUM) and the like gets a lot of attention as a memory material with potential for a universal memory.
Writing into a phase-change element GST requires applying a large current thereto because a phase state of the phase-change element GST is to be changed. Generally, writing current published in a VSLI symposium and/or an ISSCC, in particular, a current at a reset program (changed from a crystal state to an amorphous state) is reported to be in the range of 400 μA to 600 μA. However, in order to satisfy low consumption current required for the mobile memory, it is necessary to reduce this program current. In the ISSCC2006 (P. 140, 7.5 A, 0.1 μm, 1.8V, 256 Mb, and 66 MHz Synchronous Burst PRAM), a method of reducing a consumption current by reducing a bit width simultaneously programmed has been proposed as a method of reducing a program current in a product specification.
A mobile memory is required to reduce a reset program current to the range of about 100 μA to 200 μA. Thus, the search for a composition or material for a phase-change element GST is proceeding. It is also required that access time achieves fast access like a DRAM, and internal access speed thereof is desired to be in the range of about 10 ns to 20 ns. FIG. 2 shows a relationship diagram between a reset program current Ireset and values of a set resistance Rset and a reset resistance Rrst at a set state and a reset state. As shown in FIG. 2, the value of each of the resistances Rset and Rrst of the phase-change element GST considerably changes in the range of one or two order or more as the program current value changes. A phenomenon is seen which reset and set resistance values increase when a reset program current (Ireset) is reduced.
As will be described later, a set program current (Iset) is less than a reset program current (Ireset), and the maximum voltage and the maximum current at the programming are restricted. For example, a set program current Iset in FIG. 2 is set to about 60% of the current value of the reset program current Ireset. For example, in the case of the reset program current of 200 μA, the reset resistance is about 10 MΩ, and the set resistance is about 100 KΩ. In the case of the set resistance of 100 KΩ, the set readout current becomes lower to about 4 μA. Thus, there has been a problem that it is difficult to achieve fast readout because the set readout current becomes smaller.
Hereinafter, these problems will be described more in detail. FIG. 3 shows a circuit diagram of a sense amplifier and a column selecting switch (hereinafter, referred to as a "Y switch") as a conventional readout circuit. FIG. 4 shows a relationship diagram between a program resistance value and voltage V in the phase-change element GST. FIG. 5 shows a relationship diagram between a program resistance value and a current I in the phase-change element GST. FIG. 6 shows profiles of current and temperature at programming of a phase-change memory. FIG. 7 and FIG. 8 respectively show volt-ampere characteristic diagrams at an amorphous state (reset state) and a crystal state (set state) of the phase-change element GST.
In FIG. 6 which shows profiles of current and temperature at programming of a general phase-change memory, program time is shown in the horizontal axis, while current and temperature profiles are shown in the longitudinal axis. Since the temperature profile here is determined by the supplied current, it is simplified and shown as the same as the current profile. In the case where the phase-change element GST is changed to an amorphous state, a large reset program current Ireset is supplied for a short time. The phase-change element GST is caused to generate heat due to the reset program current until the temperature exceeds melted temperature (Tm), and the phase-change element GST is then cooled rapidly. Rapid cooling causes the phase-change element GST to become an amorphous state.
Further, in the case where the phase-change element GST is changed from the amorphous state to a crystal state, a set program current Iset smaller than the reset program current Ireset is supplied to the phase-change element GST for a time longer than that at the reset program. The phase-change element GST is caused to generate heat for a long time at temperature lower than the melted temperature (Tm). Slow cooling from low temperature causes the phase-change element GST to become a crystal state. Generation of heat when to change the phase states is caused by a current flowing to a phase-change element material itself or resistance (R) such as a heater material. The product of a square value of the flowing current (I) and the resistance (R) is a calorific value.
In FIG. 7 which shows a device property of the phase-change element GST at a reset state, applied voltage is shown in the horizontal axis, while a current is shown in the longitudinal axis. The applied voltage VGST to the reset resistance Rrst in the phase-change element GST at a reset state is gradually raised. When the applied voltage reaches predetermined constant voltage Vth, the slope in FIG. 7 changes largely, and a phenomenon in which the current according to dynamic resistance Rdyn flows rapidly occurs. This phenomenon is called as Ovonic Threshold Switching (OTS). This voltage Vth is called as transition voltage. When the current more than the minimum reset program current Ireset(min) is applied after occurrence of OTS, the phase-change element GST is changed to a reset state.
Further, when a current less than the maximum set program current Isafe but more than the minimum set program current Iset(min) is applied thereto, the phase-change element GST is allowed to change to a set state. The difference between the minimum reset program current Ireset(min) and the maximum set program current Isafe is a margin of the program current for programming the phase-change element GST to either the reset state or the set state. The voltage VGST when obtaining the maximum set program current Isafe is defined as maximum set program voltage Vsafe. Moreover, the transition voltage Vth at which OTS occurs varies depending on temperature dependency and/or a condition of a phase-change film. The maximum and minimum values of the transition voltage Vth are respectively defined as Vth(Max) and Vth(Min).
In FIG. 8 which shows a device property of the phase-change element GST at a set state, applied voltage is shown in the horizontal axis, while a current is shown in the longitudinal axis. Set resistance Rset is first indicated with respect to the applied voltage VGST. When the applied voltage VGST becomes predetermined voltage VH or more, it is under dynamic resistance Rdyn. The voltage VH at which the resistance property is changed is called as hold voltage VH. In the programming from a set state to a reset state, by applying the maximum set program voltage Vsafe or more thereto to supply the current of the minimum reset program current Ireset(min) or more thereto, the phase-change element GST is allowed to phase-change to a reset state.
Next, readout voltage Vread and readout current Iread at a reset state and a set state of the phase-change element will be described. At the reset state shown in FIG. 7, the readout voltage Vread has first to be set to the transition voltage Vth(min) or less. This is because of reasons as follows. In the case where voltage over the transition voltage Vth(min) is applied to a bit line BL, OTS occurs in the phase-change element to become a region of the dynamic resistance Rdyn. A current larger than the reset readout current Iread that flows when the phase-change element has high resistance thus flows. For that reason, it is mistakenly determined that the set readout current at low resistance state flows, whereby it is impossible to read out normally.
The readout current Iread has also to be the minimum set program current Iset(min) or less. This is because of reasons as follows. In the case where the applied voltage becomes the transition voltage Vth(min) or more even instantaneously when the readout voltage is applied to the bit line BL, the phase-change element GST becomes the dynamic resistance Rdyn region, whereby the current of the minimum set program current Iset(min) or more flows thereto. In this case, a phase change occurs in the phase-change element GST that is written to a reset state even though the readout is carried out, whereby the phase-change element GST may be rewritten to a set state. Mistakenly writing at the readout in this manner is referred to as "read disturb".
Similarly, in the case of the set state in FIG. 8, similar conditions are also required. The readout voltage Vread has to be the maximum set program voltage Vsafe or less. In addition, in the case where the readout current Iread is the maximum set program current Isafe or less, the phase-change element GST leads to a reset state. This results in a permissible range. Ranges of readout voltage and a current for satisfying both conditions at the reset state and the set state are as follows.Vread<Vth(Min)<VH(<Vsafe)  Formula (1)Iread<Iset (<Isafe)  Formula (2)Thus, the ranges of the readout voltage and the current are required to be set so as to satisfy the conditions of the formulas (1) and (2) at the programming and readout for the phase-change element. These setups allow the phase-change element GST to function as a nonvolatile memory without erasing the written data at the readout.
In FIG. 3, a circuit diagram of a sense amplifier 201 and a Y switch 203 is shown as a conventional readout circuit. In a Magnetic Random Access Memory (MRAM) or a Resistance Random Access Memory (RRAM) end a memory element of a resistance program system such as a phase-change memory, a current sense amplifier type of sense amplifier is normally utilized. The current sense amplifier is a sense amplifier that reads out and detects a current flowing to a resistance element to amplify it. The sense amplifier 201 is set up so as to ensure the readout voltage and the current according to the formulas (1) and (2).
A bias circuit (including a comparator circuit 101 and a PMOS transistor P2) for controlling voltage and a current on the bit line BL in the memory cell is incorporated in the sense amplifier 201. The sense amplifier 201 is constituted from PMOS transistors P1, P2, a NMOS transistor N1 and a comparator circuit 101. The Y switch 203 is constituted from a plurality of NMOS transistors N3, N4. The sense amplifier 201 is connected to the Y switch 203 at the connection node Vbit so as to be connected to the bit line BL of the memory cell via the Y switch 203. In the following circuit diagrams, a NMOS transistor is represented by a transistor Nxx, while a PMOS transistor is represented by a transistor Pxx.
Drain, source and gate of the transistor P1 are respectively connected to a source of the transistor P2, a power supply Vdd, and a standby signal STB. Drain, source and gate of the transistor P2 are respectively connected to a sense amplifier output Vsa, the drain of the transistor P1, and reference voltage Vref. Drain, source and gate of the transistor N1 are respectively connected to the sense amplifier output Vsa, the connection node Vbit, and an output from the comparator circuit 101. A drain of each transistor in the Y switch 203 is connected to the connection node Vbit. Gates of the transistors in the Y switch 203 are respectively connected to Y selection signals (Y0, . . . and Yn). Sources thereof are respectively connected to the bit lines BL of the memory cells.
The connection node Vbit and the clamp voltage Vclmp are inputted to the comparator circuit 101, and the comparator circuit 101 outputs a comparison result to the gate of the transistor N1. A conductive state of the transistor N1 is controlled on the basis of the output from the comparator circuit 101 so that voltage of the connection node Vbit becomes equal to the clamp voltage Vclmp. By setting the clamp voltage Vclmp to voltage according to the formula (1), it is possible to hold the connection node Vbit to optimal constant voltage (clamp voltage Vclmp). Since the voltage applied to the memory cell is the same as the voltage at the connection node Vbit, the clamp voltage Vclmp is applied as the readout voltage.
Further, the maximum flowing current is set to the minimum set program current Iset(min) or less depending on the reference voltage Vref, which is a gate input of the transistor P2. The current flowing to the transistor P2 is the same as the current flowing to the transistor N1 and the readout current Iread of the memory cell. The readout current Iread becomes the minimum set program current Iset(min) or less, whereby it is possible to satisfy the formula (2).
During readout of the memory cell, the readout current Iread flows in accordance with memory information of the memory cell selected by the Y selection signal. The difference between the readout current Iread at a set state and a reset state causes output voltage of the sense amplifier output Vsa to be differentiated. The memory information in the memory cell is outputted as the sense amplifier output Vsa. Moreover, a comparator circuit (not shown in the drawings) compares and determines the sense amplifier output Vsa with the reference amplifier output to output a comparison result to an external interface circuit as memory cell data.
Next, the specific operation will be described with reference to current-voltage characteristics of the phase-change element. Here, it is assumed that transition voltage Vth(min) of the phase-change element is 0.5V and the minimum set program current Iset(min) is 50 μA. In this case, in view of a margin of the readout operation, the readout voltage Vread can be set to 0.4V, and set readout current Iread can be set to 40 μA. In order to achieve a fast readout operation, it is required to ensure the set readout current of a predetermined level or more. In order to ensure the set readout current Iread to 40 μA, it is desired that the set resistance value is 10 KΩ or less. Further, in view of production tolerance or the like, it is desired that the reset resistance value at a reset state has a margin in the range of one or two order with respect to the set resistance. It is desired that the reset resistance value is 1,000 KΩ or more.
It is necessary that a device property of the phase-change element GST is set so that the readout voltage Vread is 0.4V and the set readout current Iread is 40 μA. As shown in FIG. 4, even when the program resistance is 10 MΩ, the voltage VGST is held at 0.4V. Namely, even though the reset resistance increases up to about 10 MΩ, it is possible to keep the voltage VGST applied to the phase-change element GST at 0.4V or less. No OTS thus occurs.
Moreover, as shown in FIG. 5, the device property of the phase-change element GST is set so that the set readout current of 40 μA flows when the program resistance is 10 KΩ. When the resistance further increases up to 100 KΩ, the set readout current Iread becomes about 4 μA. Further, in the case where the resistance becomes too lower so that the resistance value is 1 KΩ, a current of 40 μA or more does not flow because current control is carried out at the transistor P2 in the sense amplifier. In FIG. 4 and FIG. 5, the voltage and current are controlled in accordance with the Ohm's law.
In this case, the program resistance satisfying that the readout voltage Vread is 0.4V and the set readout current Iread is 40 μA becomes 10 KΩ for the set resistance and 1,000 KΩ for the reset resistance. By carrying out the setting in this manner to constantly keen the current and voltage to be supplied to the phase-change element GST, it is possible to realize a nonvolatile memory and to achieve fast readout.
However, according to FIG. 2, the reset program current Ireset required to obtain the resistance value is about 800 μA, and the set program current Iset thereof thus becomes 480 μA (obtained by multiplying 800 by 60%). In the mobile memory required to reduce power consumption, the reset program current Ireset of 200 μA or less is required. In the case where the reset program current Ireset is 200 μA, the set resistance is 100 KΩ and the set resistance is 10,000 KΩ. The set readout current when the set resistance is 100 KΩ becomes 4 μA, and a fast readout operation is thus hardly carried out. In the case where the program current is made smaller in the phase-change memory in this manner, the set resistance value becomes larger. Therefore, there has been a problem that it is difficult to carry out fast readout because the readout current at a set state becomes smaller.
There are following patent documents as prior patent documents regarding a variable resistance value type of memory device. A memory cell disclosed in Japanese Unexamined Patent Application Publication No. 2005-71500 includes two selection transistors in parallel. One selection transistor conducts an electric current therethrough at readout, while two selection transistors conduct an electric current therethrough at writing, whereby the current flowing to the phase-change element is controlled. In Japanese Unexamined Patent Application Publication No. 2005-50424, writing conditions in which a writing voltage level and drop speed are differentiated in accordance with a verifying result of writing data are utilized. However, the above-mentioned patent documents are documents relating to a technique to program precisely, and they fail to disclose the problems in the case where the reset program current is made smaller according to the present invention.

Memory readout circuit and phase-change memory device