Simultaneous use of wavelengths in at least two ranges selected from RADIO, MICRO, FIR, IR, NIR-VIS-NUV, UV, DUV, VUV EUV, XRAY in a regression procedure to evaluate parameters in mathematical dispersion structures to model dielectric functions.

It is well known to apply electromagnetic radiation to evaluate optical properties of sample systems. The disclosed invention can comprise any means for generating an electromagnetic beam and causing it to impinge upon a sample system, such as:                reflectometer;        spectrophotometer;        ellipsometer;        spectroscopic ellipsometer;        polarimeter; and        spectroscopic polarimeter;with reflected or transmitted electromagnetic radiation being directed to enter a detector.
For breadth it is noted that while semiconductor sample systems with one or more thin film on their surface are typical of those to which ellipsometry can be applied, essentially any sample can be subjected to investigation using electromagnetic radiation. Non-limiting Examples are amples which comprise:                Materials with High or Low Extinction Coefficient (K);        Materials with High or Low Refractive Index (N);        Metals;        Semimetals;        Semiconductors;        Insulators;        Transparent Oxides;        Liquids;        Fluids;        oils;        Lubricants;        Biological materials;        Nucleic Acids;        DNA &/or RNA;        Proteins;        Amino Acids;        Carbohydrates;        Waxes;        Fats;        Lipids;        Plant material;        Animal material;        Fungi material;        Microbe material;        Tissues;        Condensates;        Combination Solid and Liquid &/or Gas sample systems;        Liquid Crystals;        free standing films;        Porous materials;        Alloys;        Compounds;        Composites;        Ceramics;        Polymers;        Fiberous materials;        Wood containing materials;        Paper containing materials;        Plastics;        Crystaline materials;        Amorphous materials;        Polycrystaline Materials;        Glassy materials;        Homogeneous materials;        Inhomogeneous materials;        Superlattices;        Superconductors;        Lamgmuir-Blodgett materials;        Monolayers;        Fractional Monolayers;        Multi layers;        Samples comprising Quantum Dots &/or Wells;        Polymers;        Conjugated Polymers;        Films of any material on substrate of another material;        Monoparticles;        Composites containing monoparticles;        Nanomaterials;        Materials containing Nanomaterials;        Superlattices with Nanoparticles;        combinations of the above.
It is further noted that many types of ellipsometer systems exist. Examples are Nulling, Rotating Polarizer, Rotating Analyzer, Rotating Compensator, Modulation Element etc. but all have in common that they provide data which allow determination of PSI (Ψ) and DELTA (Δ) of a Sample, where (Ψ) and (Δ) are defined by:ρ=rp/rs=Tan(Ψ) exp(iΔ)Tan (Ψ) or Cos (Δ), coordinates on a Poincare Sphere or other descriptors of the Polarization State of electromagnetic radiation are to be understood as equivalents to PSI (Ψ) and DELTA (Δ), as are the Coefficients "IN" "S" & "C":N=Cos(2Ψ);C=Sin(2Ψ)Cos(Δ);S=Sin(2Ψ)Sin(Δ);in Modulation Ellipsometers, (see U.S. Pat. Nos. 5,416,588 and 5,956,145 which are incorporated by reference hereinto).
Further, evaluation can be achieved for at least one sample system characterizing selection from the group consisting:                energy gap;        index of refraction;        growth rate;        etch rate;        thickness;        extinction coefficient;        carrier concentration;        alloy ratio;        critical point;        depolarization rate;        inhomogenuity;        grading;        anisotropy;        temperature;        crystalinity;        stress;        strain;        surface layer roughness;        interface layer;        interface roughness;        electro-optic coefficient;        magneto-optic coefficient;        chemical bond presence;        chemical bond strength;        sample system phase;        combinations of the above.
It is also noted that data can be obtained which is characterized by at least one selection from the group consisting of:                reflected electromagnetic radiation;        transmitted electromagnetic radiation;        single sample system invesitgated;        multiple sample systems simultaneously        investigated;        single angle of incidence of electromagnetic        radiation;        single sample system orientation;        multiple sample system orientations;        multiple angles of incidence of        electromagnetic radiation;        date acquired from single instrument;        data acquired from multiple instruments;        focused beam of electromagnetic radiation;        divergent beam of electromagnetic radiation;        unfocused beam of electromagnetic radiation;        in-situ;        ex-situ;        electro-optic;        electro-opticcoincident with ellipsometric data;        kerr magneto-optic;        kerr magneto-optic coincident with ellipsometric data;        combinations of the above.
Briefly, methodology provides that electromagnetic radiation be caused to interact with a sample system, with detected changes in intensity and/or polarization state being used to evaluate the sample system optical constants. Spectrophotometry and Reflectometry detect changes in Intensity of a beam of electromagnetic radiation resulting from interaction with a sample system. Ellipsometry characterizes change in polarization state caused by interaction of a beam of electromagnetic radiation with a sample system. And while strong correlation typically exists between thin film thickness and optical constants, Ellipsometric data can, at times, be sufficient to evaluate the thickness of a thin flim on a sample system and its refractive index and extinction coeficient, (or the mathematically equivalent real and imaginary parts of the dielectric function). Combined with Spectrophotometry and Reflectometry data serves to to enable less correlated determination of sample system properties.
Further, while use of data at a single wavelength can provide beneficial results in many situations, it is typical to obtain data at a multiplicity of wavelengths, and perhaps at a plurality of Angles of Incidence (AOI) at which a beam of electromagnetic radiation is caused to approach a sample system. This allows determining the refractive index and extinction coeficient or the mathematically equivalent real and imaginary parts of the dielectric function over a spectroscopic range.
Continuing, it is known to:                provide a sample system and obtain characterizing data therefrom comprising change in spectroscopic electromagnetic radiation caused to interact therewith, said change being caused by said interaction, and        provide a mathematical model of the sample system; and        perform a regression procudure of the mathematical model onto the data to evaluate parameters in the mathematical model.Where data is to be obtained in two different wavelength ranges, possible non-limiting combination of instruments which operate in said different spectral ranges are:        Two Ellipsometer Systems operating in different wavelength ranges;        One Ellipsometer and a Transmission Spectrometer;        One Ellipsometer and a Reflection Spectrometer;        Two Spectrometer Systems, one Reflection mode and one Transmission mode.
Again, where ellipsometry is applied the change is in polarization state, rather than intensity of the spectroscopic electromagnetic radiation caused by reflection from or transmission through the sample system.
By said known methodology insight to the composition and optical properties of the sample system can be determined.
Typically the spectroscopic electromagnetic radiation is obtained using an instrument which provides wavelengths in a range selected from the group:                Radio;        Micro        Far Infrared (FIR);        Infrared (IR);        NIR-VIS-NUV;        Near Infrared (NIR);        Visual (VIS);        Near Ultraviolet (NUV);        Ultraviolet (UV);        Deep Ultraviolet (DUV);        Vacuum Ultraviolet (VUV);        Extreme Ultraviolet (EUV);        X-Ray (XRAY);and while wavelengths from one said selection is often sufficient to provide good evaluation of parameters in a mathematical model of a sample system, it does occur that some parameters in a mathematical model can not be investigated by wavelengths in a single selected range of wavelengths. For instance, wavelengths in the IR range are typically appropriate for investigation of the nature of chemical bonds in molecularly bonded sample systems, and IR, NIR, VIS and UV wavelengths are all suited to obtaining information about absorption and electron transitions in numerous material, (eg. semiconductors, semi-metals and metals). NIR wavelengths are particularly applicable to investigtion of semi-metals and VIS wavelengths to metals. Another example is that the angle of incidence of an IR beam with respect to a normal to a surface of a sample system is often strongly correlated with the absolute index of refraction of the sample system, but UV-VIS-NIR wavelengths are often capable of accurately evaluating the index and its dispersion, thereby enabling breaking of said correlation.
The following provides insight to various Sample System Physical Parameters and Spectral Ranges typically utilized to provide insight thereto:
PHYSICAL PARAMETERSPECTRAL RANGEPHONON ABSORPTIONMID-IR (MIR) TO FAR-IR (FIR)MOLECULAR BOND ABSORPTIONMIR TO FIRCHEMISTRY INFORMATION)FREE CARRIER ABSORPTIONUV-VIS AND LONGER WAVELENGTHSIN METALSFREE CARRIER ABSORPTIONNEAR-IR (NIR)IN CONDUCTIVE OXIDESFREE CARRIER ABSORPTIONMIR TO FIRIN SEMICONDUCTORSSURFACE ROUGHNESSUV-VIS (THOUGH DIFFERENTWAVELENGTH RANGES GIVEINFORMATION ON DIFFERENTLEVELS OF ROUGHNSS)SMALL SCALE INDEX GRADINGABSORBING REGIONS IN VACUUM ULTRAVIOLET (VUV) TO NIRLARGE SCALE INDEX GRADINGANY SPECTRAL REGIONTHICKNESS NON-UNIFORMITYANY SPECTRALALTHOUGH RANGE SENSITIVITYINCREASES AT SHORTER WAVELENGTHSANISOTROPYANY SPECTRAL RANGE - VARIES WITHSAMPLEDICHROISMABSORBING REGION-TYPICALLY UV ORIRABSORPTION DUE TO ELECTRONICUV TO VIS AND NIR - NIR WITHTRANSITIONSNARROW BANDGAP SEMICONDUCTORSALLOY RATIOSUV-VISNATIVE OXIDESUV-VIS(SEMICONDUCTORS)ULTRA-THIN FILM THICKNESSUVOXYGEN IN LIVING TISSUES &VIS RED-NIRWATER IN VARIOUS STATES &BIOLOGICAL MATTER
It is also noted that published Optical Constant data for many materials, (eg gold), even today often have discontinuous steps or jumps therein which result from the use of different investigating systems on either-side of the discontinuity. That is, the Optical Constants arrived at using data obtained from an Ellipsometer capable in the IR wavelength range, and Optical Constants arrived at using data obtained from an Ellipsometer capable in the NIR-VIS waelength range are often not continuous at the interface wavelengths. The discontinuity is, of course, an artifact.
In view of the above it should be apparant that simultaneous use of information gathered from various wavelength ranges from the same or different investigation systems in a single regression procudure, would enable the ability to better evaluate sample systems and provide more realistic results.
While it is often the practice to regress on a point by point, (ie. wavelength by wavelength), basis in wavelength regions where a sample system is opague, regression based evaluation of parameters in a mathematical model preferably involves parameterization in wavelength regions where a sample system, (eg. a bulk material and substrates with layers thereupon), is transparent and where reflected electromagnetic radiation demonstrates minimal absorption and typically interference efects resulting from reflections from interfaces between layers as well as from the surface. Parameterization can provide Kramers- Kronig consistency, resulting in physical optical constants, and often reduces the number of parameters that are required to be evaluated to accurately model very irregular data. Parameterization also avoids discontinuities and reduces the effects of noise in optical constants by modeling with smooth mathematical functions. Disclosed in the J.A. Woollam Co. W-VASE32 (Registered Trademark), Manual are various approaches, including the mathematics thereof, to Parameterization, including:                Cauchy;        Cauchy +Urbach absorption;        Sellmeier Oscillator, (zero broadened);        Lorentz Oscillator;        Gaussian Oscillator;        Harmonic Oscillator;        Drude Oscillator;        Tauc-Lorentz Oscillator;        Cody-Lorentz Oscillator;        Tanguay;        Ionic Oscillator;        TOLO;        Gauss-Lorentz Oscillator;        Gauss-Lorentz Oscillator Asymetric Doublet (GLAD) Oscillator;        Herzinger-Johs Parametric Semiconductor Oscillator Model;        Psemi-Eo Oscillator;        Critical Point Parabolic band (CPPB);        Adachi Oscillator Model;        Pole;wherein the Oscillators are preferably Kramers-Kronig consistent.
Following directly are mathematical descriptions of many of the foregoing Oscillator Structures, which are presently available in the J.A. Woollam Co. WVASE32 (Registered Trademark), GEMOSC™ Layer. Said GEMOSC™ layer can be invoked once Dielectric Function plots are known over a Spectroscopic Range by other means, and enables placing Oscillator Strurctures of appropriate shape at appropriate locations under, for instance, the imaginary part of said Dielectric Function such that summation of their contributions at each wavelength results in said Dielectric Function. The oscillator Structures are Kramers-Kronig consistant, hence modeling the Imaginary part allows calculation of the real part.
e1 Offset:Purely real constant added to ε1. It is equivalent to "εco",which is often seen in scientific literature.Sellmeier:StyleEquationFit ParametersSell.0 (nm)Sell.5 (μm)      ɛ    n_sellmeier    =                              A          n                ·                  λ          2                                  λ        n        2                            λ        2            -              λ        n        2            Ampn = An (nm−2), Wvln = λn (nm)Ampn = An (μm−2), Wvln = λn (μm) Sell.1 (nm)Sell.6 (μm)      ɛ    n_sellmeier    =                              A          n                ·                  λ          2                                  λ        n                            λ        2            -              λ        n        2            Ampn = An (nm−1), Wvln = λn (nm)Ampn = An (μm−1), Wvln = λn (μm) Sell.2 (nm)Sell.7 (μm)      ɛ    n_sellmeier    =                    A        n            ·              λ        2                            λ        2            -              λ        n        2            Ampn = An (dimensionless),Wvln = λn (nm) or Wvln = λn (μm)n = 1, 2Cauchy:StyleEquationFit ParametersChy.0      N    n    =            A      n        +                  B        n                    λ        2              +                  C        n                    λ        4            Ann = An, Bnn = Bn, Cnn = Cn, (dimensionless)λ (μm)       K    n    =      αⅇ          β                    (                  1.24                                (                                          1                λ                            -                              1                r                                      )                          )            Akn = α (dimensionless)Bkn = β (μm−1),       ɛ    n_Cauchy    =            (                        N          n                +                  iK          n                    )        2  Ckn = γ (μm) (user adjustable but not fittable.Only valid when λ > γ)DrudeStyleEquationFit ParametersDrd.0 (eV)Drd.5 (cm−1)      ɛ    n_Drd    =      -                            A          n                                  Br          n                                      E          2                +                              iBr            n                              E                    Ampn = An (eV)Brn = Brn (eV)Ampn = An (cm−1),Brn = Brn (cm−1) Drd.1 (eV) Drd.6 (cm−1)      ɛ    n_Drd    =      -                  A        n                              E          2                +                              iBr            n                              E                    Ampn = An (eV2),Brn = Brn (eV)Ampn = An (cm−2),Brn − Brn (cm−1)rho-tau Drude & N-mu Drude:CalculatedFitParametersStyleEquationParameters(mstar known)Rho-tau.0      ɛ    n_rtDrd    =            -              ℏ        2                            ɛ        0                                    ρ          n                                  (                                                    τ                n                            ·                              E                2                                      +                          i                                                                                ℏ                                                                                E                                )                    rhon = ρn (Ω-cm),taun = τn (10−15 sec) Rho-tau.5      ρ    n    =                    m        *                              N          n                                  q          2                                  τ          n                      =          1              q                                                            μ          n                                  N          n                    rhon = log10(ρn) (Ω-cm)taun = τn (10−15 sec)log10(N) (cm−3)μ (cm2V−1 sec−1) N-mu.0      ɛ    n_NμDrd    =            -              ℏ        2                            ɛ        0                                    ρ          n                                  (                                                    τ                n                            ·                              E                2                                      +                          i                                                                                ℏ                                                                                E                                )                    Nn = Nn (cm−3),mun = μn (cm2V−1 sec−1)N (cm−3),μ (cm2V−1 sec−1) N-mu.5      ρ    n    =                    m        *                              Nq          2                        τ              =          1              q                                                            μ                    N                    Rhon − log10(Nn) (Ω-cm)taun = τn (10−15 sec)log10(N) (cm−3)μ (cm2V−1 sec−1)Lorentz:StyleEquationFit ParametersLor.0 (eV) Lor.5 (cm−1)      ɛ    n_Lorentz    =                    A        n                          Br        n                          E        n                            E        n        2            -              E        2            -                        iBr          n                        E            Ampn = An (dimensionless),Enn = En (eV), Brn = Brn (eV)Ampn = An (dimensionless),En1 = En (cm−1), Br1 = Brn (cm−1) Lor.1 (eV) Lor.6 (cm−1)      ɛ    n_Lorentz    =                    A        n                          E        n                            E        n        2            -              E        2            -                        iBr          n                        E            Ampn = An (eV),Enn = En (eV), Brn = Brn (eV)Ampn = An (cm−1),Enn = En (cm−1), Brn = Brn (cm−1) Lor.2 (eV) Lor.7 (cm−1)      ɛ    n_Lorentz    =                    A        n                          E        n        2                            E        n        2            -              E        2            -                        iBr          n                        E            Ampn = An (dimensionless),Enn = En (eV), Brn = Brn (eV)Ampn = An (dimensionless),Enn = En (cm−1), Brn = Brn (cm−1)HarmonicStyleEquationFit ParametersLor.0 (eV) Lor.5 (cm−1)      ɛ    n_Harmonic    =                    A        n                          Br        n                          E        n                            E        n        2            -              E        2            +                        1          /          4                                  Br          n          2                    -                        iBr          n                        E            Ampn = An (dimensionless),Enn = En (eV), Brn = Brn (eV)Ampn = An (dimensionless),En1 = En (cm−1), Br1 = Brn (cm−1) Lor.1 (eV) Lor.6 (cm−1)      ɛ    n_Harmonic    =                    A        n                          E        n                            E        n        2            -              E        2            +                        1          /          4                                  Br          n          2                    -                        iBr          n                        E            Ampn = An (eV),Enn = En (eV), Brn = Brn (eV)Ampn = An (cm−1),Enn − En (cm−1), Brn = Brn (cm−1) Lor.2 (eV) Lor.7 (cm−1)      ɛ    n_Harmonic    =                    A        n                          E        n        2                            E        n        2            -              E        2            +                        1          /          4                                  Br          n          2                    -                        iBr          n                        E            Ampn = An (dimensionless),Enn = En (eV), Brn = Brn (eV)Ampn = An (dimensionless),Enn = En (cm−1), Brn = Brn (cm−1)Gaussian:StyleEquationFit Parameters                                                        ɛ              n_Gaussian                        =                                          ɛ                n1                            +                              i                                                                                ɛ                  n2                                                              ,          where                                                                        ɛ              n1                        =                                          2                π                                          P                                                              ∫                                      R                    g                                    ∞                                                                                ξɛ                        n2                                                                                (                        ξ                        )                                                                                ξ                        2                                            -                                              E                        2                                                                                ⅆ                    ξ                                                                                ,                                              using                                                                          ɛ            n2                                                                        as                                                              defined                                                                          below            .                                  Gau.0 (eV) Gau.5 (cm−1)      ɛ    n2    =                    A        n                          ⅇ                  -                                    (                                                E                  -                                      E                    n                                                                    Br                  n                                            )                        2                                +                  A        n                          ⅇ                  -                                    (                                                E                  +                                      E                    n                                                                    Br                  n                                            )                        2                              Ampn = An (dimensionless),Enn = En (eV), Brn = Brn = Brn (eV)Ampn = An (dimensionless),En1 = En (cm−1), Br1 = Brn (cm−1) Gau.1 (eV) Gau.6 (cm−1)      ɛ    n2    =                              A          n                          Br          n                                  ⅇ                  -                                    (                                                E                  -                                      E                    n                                                                    Br                  n                                            )                        2                                +                            A          n                          Br          n                                  ⅇ                  -                                    (                                                E                  +                                      E                    n                                                                    Br                  n                                            )                        2                              Ampn = An (eV),Enn = En (eV), Brn = Brn (eV)Ampn = An (cm−1),Enn = En (cm−1), Brn = Brn (cm−1) Gau.2 (eV) Gau.7 (cm−1)      ɛ    n2    =                                          A            n                                          E            n                                    Br          n                                  ⅇ                  -                                    (                                                E                  -                                      E                    n                                                                    Br                  n                                            )                        2                                +                                        A            n                                          E            n                                    Br          n                                  ⅇ                  -                                    (                                                E                  +                                      E                    n                                                                    Br                  n                                            )                        2                              Ampn = An (dimensionless),Enn = En (eV), Brn = Brn (eV)Ampn = An (dimensionless),Enn = En (cm−1), Brn = Brn (cm−1)Gauss-Lorentz:                                                        ɛ              n                        =                          i                                                                                Φ                  n                                                                  [                                                                                ∫                        0                        ∞                                                                                ⅇ                                                                                ⅈ                                                                                (                                                                  ℏω                                  -                                                                      E                                    n                                                                    +                                                                                iBr                                      n                                                                                γ                                        n                                                                                (                                        s                                        )                                                                                )                                                                                s                                                                                ⅆ                          s                                                                                +                                                                  ∫                        0                        ∞                                                                                ⅇ                                                                                ⅈ                                                                                (                                                                  ℏω                                  +                                                                      E                                    n                                                                    +                                                                                iBr                                      n                                                                                γ                                        n                                                                                (                                        s                                        )                                                                                )                                                                                s                                                                                ⅆ                          s                                                                                ]                                                              ,                                                                        where                                                                                γ                  n                                                                  (                  s                  )                                                      =                                          Γ                n                            +                              2                                                  σ                  n                  2                                                s                                              ,                                    ⅇ                              Bmix                n                                      =                                          Γ                n                                            σ                n                                              ,          and                                              Φ                                                              is                                                              defined                                                                          below            .                                  StyleΦFit ParametersCalculated ParametersG-L.0 (eV)Φ = AnAn = Ampn (dimensionless),Γn = Blorn (eV),En = Enn (eV), Brn − Brn (eV),σn = Bgaussn (eV)Bmixn = Bmixn (dimensionless)G-L.5 (cm−1)An = Ampn (dimensionless),Γn = Blorn (cm−1),En = Enn (cm−1), Brn = Brn (cm−1)σn = Bgaussn (cm−1)Bmixn = Bmixn (dimensionless) G-L.1 (eV)  G-L.6 (cm−1)  Φ  =            A      n              Br      nn      An = Ampn (eV),En = Enn (eV), Brn = Brn (eV)Bmixn = Bmixn (dimensionless)An = Ampn (cm−1),En = Enn (cm−1), Brn = Brn (cm−1)Bmixn = Bmixn (dimensionless)Γn = Blorn (eV),σn = bgaussn (eV) Γn = Blorn (cm−1),σn = Bgaussn (cm−1) G-L.2 (eV)  G-L.7 (cm−1)  Φ  =                    A        n                          E        n                    Br      nn      An = Ampn (eV),En = Enn (eV), Brn = Brn (eV)Bmixn = Bmixn (dimensionless)An = Ampn (cm−1),En = Enn (cm−1), Brn = Brn (cm−1)Bmixn = Bmixn (dimensionless)Γn = Blorn (eV),σn = bgaussn (eV) Γn = Blorn (cm−1),σn = Bgaussn (cm−1)Tauc-Lorentz & Egap Tauc-Lorentz:StyleEquationFit ParametersT-L.0 (eV)            ɛ              n_T        -        L              =                  ɛ        n1            +              i                                                            ɛ          n2                      ,  whereAmpn = An (dimensionless),Enn = Eon (eV),Cn = Cn (eV)Egn = Egn (eV) EgT-L.o (eV)                                          ɛ            n2                    =                                                                                A                    n                                                                          (                                          E                      -                                              Eg                        n                                                              )                                                  2                                                              (                                                            E                      2                                        -                                          Eo                      n                      2                                                        )                                +                                  C                  n                  2                                                                                Θ                                                  (                                      E                    -                                          Eg                      n                                                        )                                            E                                                          and                                                  ɛ            n1                    =                                    2              π                                    P                                                      ∫                                  R                  g                                ∞                                                                                ξɛ                      n2                                                                                (                      ξ                      )                                                                                ξ                      2                                        -                                          E                      2                                                                                ⅆ                  ξ                                *                                                           Egap T-L.0: same asabove, exceptEgap = Eg (eV)Ionic1 & Ionic2:StyleEquationFit ParametersIon1.0 (eV)  Ion1.5 (cm−1)      ɛ    n_Ion1    =            ɛ      ∞n        +                            E          Tn          2                                  (                                    ɛ              dcn                        -                          ɛ              ∞n                                )                                      E          Tn          2                -                  E          2                -                              iBr            n                              E                    edcn= εdcn (dimensionless),einfn = ε∞n (dimensionless),Eton = ETn (eV), Brn = Brn(eV)edcn = εdcn (dimensionless),einfn = ε∞n (dimensionless),Eton = ETn (cm−1), Brn = Brn (cm−1) Ion2.0 (cV)  Ion2.5 (cm−1)      ɛ    n_Ion1    =            ɛ      dcn        (                            E          Tn          2                          E          Ln          2                    +                                    E            Tn            2                                          (                          1              -                                                E                  Tn                  2                                                  E                  Ln                  2                                                      )                                                E            Tn            2                    -                      E            2                    -                                    iBr              n                                    E                                )  edcn= εdcn (dimensionless),eton = ETn (eV), Brn = Brn (eV)Elon = El,n (eV)edcn = εdcn (dimensionless),Eton = ETn (cm−1), Brn = Brn (cm−1)Elon = ELn (eV)TOLO:StyleEquationFit ParametersTOLO.0 (eV)  TOLO.5 (cm−1)      ɛ    n_TOLO    =            A      n                                    E          lon          2                -                  E          2                -                              iB                          l                            on                                          E                                      E          ton          2                -                  E          2                -                              iB            ton                              E                    Ampn = An (dimensionless),Elon = Elon (eV), Eton = Eton (eV)Blon = Blon (eV), Bton = Bton (eV)Ampn = An (dimensionless),Elon = Elon (cm−1), Eton = Eton (cm−1)Blon = Blon (cm−1), Bton = Bton (cm−1) TOLO.1 (eV)  TOLO.6 (cm−1)      ɛ    n_TOLO    =                    A        n                    B        ton                                          E          lon          2                -                  E          2                -                              iB            lon                              E                                      E          ton          2                -                  E          2                -                              iB            ton                              E                    Ampn = An (eV),Elon = Elon (eV), Eton = Eton (eV)Blon = Blon (eV), Bton = Bton (eV)Ampn = An (cm−1),Elon = Elon (cm−1), Eton − Eton (cm−1)Blon = Bton (cm−1), Bton − Bton (cm−1) TOLO.2 (eV)  TOLO.7 (cm−1)      ɛ    n_TOLO    =            A      n                          E        ton                    B        ton                                          E          lon          2                -                  E          2                -                              iB            lon                              E                                      E          ton          2                -                  E          2                -                              iB            ton                              E                    Ampn = An (dimensionless),Elon = Elon (eV), Eton = Eton (eV)Blon = Blon (eV), Bton = Bton (eV)Ampn = An (dimensionless),Elon = Elon (cm−1), Eton − Eton (cm−1)Blon = Blon (cm−1), Bton = Bton = (cm−1)GLAD:Separationn = Splitn × BrnAsymn > 0: (lower-energy peak) < (higher-energy peak)Asymn < 0: (lower-energy peak) > (higher-energy peak)Asymn = 0: (lower-energy peak) = (higher-energy peak)The two peaks are Gauss-Lorentz oscillators and are defined as                                                         ɛ              n                        =                          i                                                                                Φ                  n                                                                  [                                                                                ∫                        0                        ∞                                                                                ⅇ                                                                                ⅈ                                                                                (                                                                  ℏω                                  -                                                                      E                                    n                                                                    +                                                                                iBr                                      n                                                                                γ                                        n                                                                                (                                        s                                        )                                                                                )                                                                                s                                                                                ⅆ                          s                                                                                +                                                                  ∫                        0                        ∞                                                                                ⅇ                                                                                ⅈ                                                                                (                                                                  ℏω                                  +                                                                      E                                    n                                                                    +                                                                                iBr                                      n                                                                                γ                                        n                                                                                (                                        s                                        )                                                                                )                                                                                s                                                                                ⅆ                          s                                                                                ]                                                              ,                                                                        where                                                                                γ                  n                                                                  (                  s                  )                                                      =                                          Γ                n                            +                              2                                                  σ                  n                  2                                                s                                              ,                                    ⅇ                              Bmix                n                                      =                                          Γ                n                                            σ                n                                              ,          and                                              Φ                                                              is                                                              defined                                                                          below            .                                  StyleΦFit ParametersGLAD.0 (eV)Φ = AnAn = Ampn (dimensionless),En = Enn (eV), Brn = Brn (eV),Splitn = Splitn, Asymn = Asymn, Bmixn = Bmixn(Splitn, Asymn, & Bmixn all dimensionless)GLAD.5 (cm−1)An = Ampn (dimensionless),En = Enn (cm−1), Brn = Brn (cm−1),Splitn = Splitn, Asymn = Asymn, Bmixn = Bmixn(Splitn, Asymn, & Bmixn all dimensionless) GLAD.1 (eV)   GLAD.6 (cm−1)  Φ  =            A      n              Br      nn      An = Ampn (eV),En = Enn (eV), Brn = Brn (eV)Splitn = Splitn, Asymn = Asymn, Bmixn = Bmixn(Splitn, Asymn, & Bmixn all dimensionless)An − Ampn (cm−1),En = Enn (cm−1), Brn = Brn (cm−1)Splitn = Splitn, Asymn = Asymn, Bmixn = Bmixn(Splitn, Asymn, & Bmixn all dimensionless) GLAD.2 (eV)   GLAD.7 (cm−1)  Φ  =                    A        n                          E        n                    Br      nn      An = Ampn (dimensionless),En = Enn (eV), Brn = Brn (eV)Splitn − Splitn, Asymn = − Asymn, Bmixn − Bmixn(Splitn, Asymn, & Bmixn all dimensionless)An = Ampn (dimensionless),En Enn (cm−1), Brn = Brn (cm−1)Splitn = Splitn, Asymn = Bmixn = Bmixn(Splitn, Asymn, & Bmixn all dimensionless)CPPB:                                                                        ɛ                n                            =                                                                    Φⅇ                                          ⅈθ                      n                                                                                (                                          Γ                                                                        2                                                                                E                            gn                                                                          -                                                  2                                                    E                                                -                                                  i                                                                                Γ                            n                                                                                )                                                                    μ                  n                                                      ,                                          μ                n                            =                                                ±                  1                                /                2                                                                                ɛ                n                            =                                                Φⅇ                                      ⅈ                                                                                θ                      n                                                                                ln                                                        (                                                                  2                                                                          E                          gn                                                                    -                                              2                                                E                                            -                                              i                                                                                Γ                          n                                                                                )                                                                        ,                                          for                                                                                μ                  n                                            =              0                                                                        where                                                                          Φ                                                                          is                                                                          defined                                                                                below              .                                                   StyleΦFit ParametersCPPB.0 (eV)Φ = AnAmpn = An (dimensionless), Enn = Egn (eV), Brn = Γn (eV),mun − μn − −½, , 0, ½; Phasen = θn (dimensionless)CPPB.5 (cm−1)Ampn = An (dimensionless), Enn = Egn (cm−1), Brn = Γn (cm−1)mun = μn = −½, , 0, ½; Phasen = θn (dimensionless) CPPB.1 (eV) CPPB.6 (cm−1)  Φ  =            A      n              Γ      n      Ampn = An (eV), Enn = Egn (eV), Brn = Γn (eV),mun = μn = −½, , 0, ½; Phasen = θn (dimensionless)Ampn = An (cm−1), Enn = Egn (cm−1), Brn = Γn (cm−1)mun = μn = −½, , 0, ½; Phasen = θn (dimensionless) CPPB.2 (eV) CPPB.7 (cm−1)  Φ  =                    A        n                          E        n                    Γ      nn      Ampn = An (dimensionless), Enn = Egn (eV), Brn = Γn (eV),mum = μn = −½, , 0, ½; Phasen = θn (dimensionless)Ampn = An (dimensionless), Enn = Egn (cm−1), Brn = Γn (cm−1)mun = μn = −½, , 0, ½; Phasen = θn (dimensionless)Tguy:            ɛ      Tanguy_n        =                                        A            n                                                        R              n                                                            (                          E              +                              i                                                                                Γ                  n                                                      )                    2                                  {                                            g              u                                                  (                              ξ                                                  (                                      E                    +                                          i                                                                                Γ                        n                                                                              )                                            )                                +                                    g              u                                                  (                              ξ                                                  (                                                            -                      E                                        -                                          i                                                                                Γ                        n                                                                              )                                            )                                -                      2                                                      g                u                                                          (                                  ξ                                                        (                    0                    )                                                  )                                                    }              , where                                                            g              a                                                  (              ξ              )                                =                                    2                            ln                                                                                ξ                        -                          2                            π                                                                                c                                                                                o                (                                  π                                                                                ξ                                )                                      -                          2                                                                                ψ                                                  (                  ξ                  )                                                      -                          1              /              ξ                                                                                ξ                                            (                z                )                                      =                                                            R                  a                                                                      E                                                                  x                        -                                                                  a                                                        -                  z                                                              ,          and                                                          ψ                                      (              z              )                                =                                                    ⅆ                                  (                                      ln                                                                                Γ                                                                    (                        z                        )                                                                              )                                                            ⅆ                z                                                                (                              digamma                                                                                function                            )                                           StyleFit ParametersTguy.0 (eV)Ampn = An (eV2),Egn = Eg,n (eV),Bn = Γn (eV),Rn = Rn (eV)Ingn =Psemi-E0 [only PS-E0.0 (eV) Style available]:Fit ParameterDescriptionDimensionsAmpAmplitude of ε2 at EgapAmpn = Ampn (dimensionless)EgapBandgap EnergyEgapn = Egapn (eV)BrBroadening (Gaussian type)*Brn = Brn (eV)EwidWidth of absorption regionEwidn = Ewidn (eV)(Egap to high energy cut-off)MposConnecting point of polynomials,Mposn = Mposn(as a fraction of Ewid),(dimensionless)measured from (Egap + Ewid)*MampAmplitude at connecting pointMampn = Mampnof polynomials (as a fraction of(dimensionless)Amp)*O2ndSecond order polynomial factors*02ndn = 02nd (dimensionless)
For additional insight see the J.A. Woollam Co. WVASE32 (Registered Trademark), Manual which describes the GENOSC™ Layer. Said J.A. Woollam Co. WVASE32 Manual is incorporated by reference herein. Also note that insight to the application of the Drude Model with mean scatteing time and resistivity as parameters is given in "Introduction to Solid Stae Physics", Kittel, 6th Ed, John Wiley & Sons, (1986), P. 257. More insight to the Tauc-Lorentz Model can be found in "Parameterization of the Optical Functions of Amorphous Materials in the Interband Region", Jellison & Modine, Appl. Phys. Lett. 69, 371 (1996). More insight to the Gauss-Lorentz Model can be found in an article by Kim et al., at Phys. Rev. B 45, 11749 (1992). More information about the CPPB Critical Point Parabolic Band Model can be found in "Modulation Spectroscopy/Electric Field Effects on the Dielectric Function of Semiconductors", Handbook of Physics, Vol. 2 Editor Balkanski, North Holland Pages 125-127, (1980). More Information about CPM0, CPM1, CPm2 and CPm3 Models can be found in "Other Dispersion Relations for GaP, GAAS, GaSb, InP InAs, InSb Alx Ga1-x, GaxAsyP1-y", J. Appl. Phys. 66, 6030 (1989). More Information about the Tangay Model can be found in "Optical Dispersion of Wannier Excitons", Phys. Rev. Lett. 75, 4090 (1995) and Errata, Phys. Rev Lett. 76, 716 (1996).
Continuing, insight to Special Properties, Usefulness and what Materials some of said Oscillator Structures are applied to are:

Sample analysis methodology utilizing electromagnetic radiation


The present invention relates to a light emitting device where difference of brightness of pixels can be reduced when the same data currents are applied to the pixels. The light emitting device includes anode electrode layers, cathode electrode layers, pixels and cathode lines. The anode electrode layers are disposed in a first direction. The cathode electrode layers are disposed in a second direction. The pixels are formed in cross areas of the anode electrode layers and the cathode electrode layers. The cathode lines are coupled to the cathode electrode layers. Here, in one cathode electrode layer, at least one of resistors between parts corresponding to pixels except a first pixel next to a cathode line corresponding to the cathode electrode layer has resistance smaller than resistor between a part corresponding to the first pixel and a part corresponding to a pixel next to the first pixel.

1. Field of the Invention
The present invention relates to a light emitting device. More particularly, the present invention relates to a light emitting device where difference of brightness of pixels can be reduced when data currents having the same magnitude are applied to the pixels.
2. Description of the Related Art
A light emitting device emits a light having a certain wavelength when a predetermined current or voltage is provided to the light emitting device, and especially an organic electroluminescent device is self light emitting device.
FIG. 1 is a plan view illustrating a common light emitting device.
In FIG. 1, the light emitting device includes anode electrode layers 100, cathode electrode layers 102, pixels 104, walls 106, anode lines 108, cathode lines 110A and 110B and a driver 112.
The anode electrode layers 100 are disposed in a first direction.
The cathode electrode layers 102 are disposed in a second direction different from the first direction.
The pixels 104 are formed in cross areas of the anode electrode layers 100 and the cathode electrode layers 102.
The walls 106 are made up of insulating material, and are disposed between the cathode electrode layers 102 to separate electrically the cathode electrode layers 102.
The anode lines 108 are coupled to the anode electrode layers 100.
The cathode lines 110A and 110B are coupled to the cathode electrode layers 102.
The driver 112 combines with end of the lines 108, 110A and 110B as shown in FIG. 1, and includes a driving circuit 114.
The driving circuit 114 drives the pixels 104.
FIG. 2A is a view illustrating a circuitry of the light emitting device in FIG. 1. FIG. 2B and FIG. 2C are views illustrating process of driving the light emitting device in FIG. 2A.
In FIG. 2A, the light emitting device includes the pixels E11 to E64 and the driver 112.
The driver 112 includes a controller 200, a first scan driving circuit 202, a second scan driving circuit 204 and a data driving circuit 206. Here, data lines D1 to D6 correspond to the anode electrode layers 100 and the anode lines 108, and scan lines S1 to S4 correspond to the cathode electrode layers 102 and the cathode lines 110A and 110B.
The controller 200 controls the scan driving circuits 202 and 204 and the data driving circuit 206 using display data inputted from an outside apparatus (not shown).
The first scan driving circuit 202 transmits first scan signals to some of the scan lines S1 to S4, for example S1 and S3. The second scan driving circuit 204 transmits second scan signals to the other scan lines S2 and S4. As a result, the scan lines S1 to S4 are connected in sequence to a ground as described below.
The data driving circuit 206 has a plurality of current sources CS1 to CS6, and provides data currents corresponding to the display data and outputted from the current sources CS1 to CS6 to the data lines D1 to D6. As a result, the pixels E11 to E64 emit light.
Hereinafter, a process of driving the light emitting device will be described with reference to FIG. 2A to FIG. 2C.
Firstly, as shown in FIG. 2B, a first scan line S1 of the scan lines S1 to S4 is connected to the ground, and the other scan lines S2 to S4 are connected to a non-luminescent source having a voltage V1, wherein the voltage V1 has the same magnitude as a driving voltage Vc of the light emitting device.
Subsequently, data currents I11 to I61 corresponding to a first display data are provided to the data lines D1 to D6. In this case, the data currents I11 to I61 are passed to the ground through the data lines D1 to D6, the pixels E11 to E61 and the first scan line S1. As a result, the pixels E11 to E61 related to the first scan line S1 emit light.
Then, as shown in FIG. 2C, a second scan line S2 is connected to the ground, and the other scan lines S1, S3 and S4 are connected to the non-luminescent source.
Subsequently, data currents I12 to I62 corresponding to a second display data inputted to the controller 200 after the first display data is inputted to the controller 200 are provided to the data lines D1 to D6. In this case, the data currents I12 to I62 are passed to the ground through the data lines D1 to D6, the pixels E12 to E62 and the second scan line S2. As a result, the pixels E12 to E62 corresponding to the second scan line S2 emit light.
Pixels E13 to E63 corresponding to a third scan line S3 emit light, and then pixels E14 to E64 corresponding to a fourth scan line S4 emit light through the method described above. Subsequently, the above process of emitting light in the pixels E11 to E64 is repeated in units of the scan lines S1 to S4.
Hereinafter, a process of driving the pixels E11 to E64 will be described in detail through difference of brightness between the pixels E11 and E12.
Firstly, resistors between each of the pixels E11 to E64 and the ground will be described.
Each of the cathode electrode layers 102 has a constant width through its whole area as shown in FIG. 1. Hence, in one cathode electrode layer, resistors between the pixels E11 to E64 have the same resistances. As a result, a resistor between the pixel E11 and the ground is Rs, a resistor between a pixel E21 and the ground is Rs+Rp, and a resistor between a pixel E31 and the ground is Rs+2Rp. In addition, a resistor between the pixel E41 and the ground is Rs+3Rp, a resistor between a pixel E51 and the ground is Rs+4Rp, and a resistor between a pixel E61 and the ground is Rs+5Rp
Hereinafter, the data currents I11 to I61 having the same magnitude are assumed to be provided to the data lines D1 to D6 so that the pixels E11 to E61 have the same brightness.
The data currents I11 to I61 pass to the ground through corresponding pixels E11 to E61 and the first scan line S1. In this case, because the data currents I11 to I61 have the same magnitude, cathode voltages VC11 to VC61 of the pixels E11 to E61 are proportionate to resistor between corresponding pixel and the ground. Therefore, the values are high in the order of the cathode voltages VC61, VC51, VC41, VC31, VC21 and VC11. Here, brightness of the pixels E11 to E61 is affected by the cathode voltages VC11 to VC61 of the pixels E11 to E61. Generally, when data currents having the same magnitude are provided to the pixels E11 to E61, the higher the cathode voltages VC11 to VC61 are, the smaller the pixels E11 to E61 have brightness. Accordingly, when the data currents having the same magnitude are provided to the pixels E11 to E61, the pixel E11 related to the smallest resistor of resistors corresponding to the pixels E11 to E61 emits a light having the highest brightness. However, the pixel E61 related to the highest resistor of the resistors emits a light having the smallest brightness.
In short, when the data currents I11 to I61 having the same magnitude are provided to the pixels E11 to E61, the brightness of the pixels E11 to E61 is governed by the resistors between each of the pixels E11 to E61 and the ground.
In FIG. 2C, a resistor between a pixel E12 and the ground is Rs+5Rp. Accordingly, the pixel E12 of the pixels E12 to E62 corresponding to the second scan line S2 emits a light having the smallest brightness.
Hereinafter, the pixels E11 and E12 will be compared.
The resistor between the pixel E11 and the ground is Rs, but the resistor between the pixel E12 and the ground is Rs+5Rp. Hence, when pixels E11 and E12 are preset to have the same brightness, i.e. the data currents I11 and I12 having the same magnitude are provided to the pixels E11 and E61, the pixel E11 emits a light having brightness higher than the pixel E12. In this case, the pixel E12 is located next to the pixel E11, and so difference of brightness of the pixels E11 and E12 is sensed by a user.
In brief, in the light emitting device, though pixels are preset to have the same brightness, difference of brightness between the pixels is generated. In addition, the difference of brightness of the pixels E11 to E12 may be sensed by the user.


A system and method for managed peer-to-peer (p2p) file sharing. The peer nodes can include a web browser and a p2p agent. The web browser can connect to the Internet and can interface with the p2p agent. The p2p agent provides the file sharing utilities for implementing the p2p network. A web server connected to the Internet can monitor and manage p2p activity, including providing persistent storage for the p2p networks. The web server can interface with a Public Switched Telephone Network (PSTN) to provide access to the p2p network for PSTN peer nodes that do not have web browsing capabilities. A method of implementing managed p2p file sharing includes registering users; providing login and logout functions; creating p2p sessions; preparing, forwarding, receiving, accepting and/or rejecting invitations to join p2p sessions; quitting p2p sessions; deleting p2p sessions or selected members of p2p sessions; and sharing and transferring files.

Current means to share files include emails and ftp/http posting. These means can require the file that is being shared to be hosted on a server. Hosting can be expensive and such systems can limit the size of files. In addition, the transfer speeds available for these systems can result in long delays when sharing large files. Peer-to-peer (p2p) file sharing solutions have been introduced, particularly in music and video sharing environments. Common p2p solutions can provide anonymous search capabilities and retrieval of files. Without proper management of shared files, these solutions can unknowingly allow for illegal distribution of protected content. Managed p2p solutions are generally limited to intranet environments and do not readily support file sharing over extranets or the Internet. Additionally, there is no known p2p file sharing solution that can provide ease of file sharing for traditional phone users and the proliferating cell phone and conference calling markets.


A traffic shifting system is described to shift traffic away from one or more network devices or interfaces. The system ensures that traffic can be safely shifted off of a network device before the shifting occurs. The method is described as broken into several phases, such as a discovery phase, a pre-check phase, a shifting phase, and a post-shift phase. Before shifting occurs, the discovery phase is used to obtain network topology and configuration information. In the pre-check phase, that information is interrogated so that a shifting can be performed without negatively impacting the network. If the pre-check phase is passed, then the network shifting can occur through adjustment of configuration parameters, such as a cost parameter associated with an interface on any devices for which traffic is being shifted. Finally, in the post-shift phase, checks are performed to ensure traffic is shifting away from the network device.

Traffic on the Internet has grown dramatically over the last decade and continues to grow. Routers play a critical role in sustaining that growth. Various protocols exist for routers to communicate together. Typically, the protocols allow routers to identify neighbors and costs associated with routing packets to those neighbors. Such information allows the routers to construct a topology map and to select an optimal route for forwarding network packets. Open Shortest Path First (OSPF) is an example of a routing protocol for Internet Protocol networks.
In some cases, for maintenance or other reasons, it is necessary to shift traffic away from a router or a group of routers. Such traffic shifting is often manually accomplished with no set techniques established. More efficient traffic shift options are needed.

This patent is subject to a terminal disclaimer.

Shifting network traffic from a network device


A method and apparatus for combustion of a solid carbonaceous material in which the solid carbonaceous material is preheated and at least a portion thereof pyrolyzed on a stoker grate disposed in the lower portion of a combustion chamber to produce pyrolysis products. Overfire oxidant is then introduced into the combustion chamber above the stoker grate to ensure complete combustion of combustibles in the products of combustion generated by combustion of the solid carbonaceous material and the pyrolysis products. Preheating and pyrolysis of the solid carbonaceous material is carried out by the introduction of a pyrolysis agent directly into the bed of solid carbonaceous material.

1. Field of the Invention
This invention relates to a method for combustion of a solid carbonaceous material, in particular, solid fuels such as coal, municipal solids waste, biomass, refuse derived fuels, and the like in industrial and utility stoker boilers which are co-fired with other fuels such as gaseous, liquid and/or solid fuels. The method and apparatus of this invention provide a reduction in emissions, an increase in firing rate and possible improvements in efficiency, and a reduction in the amount of gaseous, liquid and/or solid fuel consumption for co-firing in a cost-effective manner in comparison with conventional solid fuel, waste, biomass and the like-fired industrial and utility stoker boilers.
2. Description of Prior Art
Most of the existing stoker processes and apparatuses for combustion of solid fuels, waste, biomass and the like include a combustion chamber equipped with a sloped or horizontal vibrating stoker grate that reciprocates or travels to move the fuel from the fuel inlet side of the combustor to the ash removal side of the combustor. A portion of the combustion air, generally equivalent to about 1.0 to about 1.3 of the fuel stoichiometric requirement is supplied under the stoker grate. Such combustion air is typically called undergrate air, and is distributed through the stoker grate to dry and burn the fuel present on the stoker grate. The fuel is first dried on the drying portion or drying grate of the stoker grate, then combusted on the combustion portion or combustion grate of the stoker grate. The residual fuel that primarily includes ash and carbon is then decarbonized or burned on the burnout portion or burnout grate of the stoker grate. The bottom ash is then removed through an ash pit. To assure carbon burnout, a high level of excess air, compared to the amount required for carbon burnout, is maintained at the burnout grate. In addition to other species, the products of fuel drying, combustion and burnout contain products of incomplete combustion such as carbon monoxide and total hydrocarbons, oxides of nitrogen, such as NO, NO2, N2O and other nitrogen-bearing compounds such as NH3, HCN and the like.
The majority of NOx evolved from the stoker grate, also referred to herein as the primary combustion zone, is believed to form from the oxidation of nitrogen-bearing compounds and a smaller portion formed from the oxidation of molecular nitrogen.
Additional air or overfire air is usually introduced above the stoker grate, referred to herein as the secondary combustion zone and mixed with the products evolved from the primary combustion zone to burn out the combustibles.
Nitrogen-bearing compounds that evolve from the fuel react with oxygen in and downstream of the secondary combustion zone, forming significant additional NOx. Because of the low combustion temperatures in and downstream of the overfire air injection, most of the NOx formed in this zone is by the oxidation of nitrogen-bearing compounds (less than about 10% are formed in this zone by the oxidation of molecular nitrogen).
In most cases, a boiler is an integral part of the combustor to recover the heat generated by the combustion of the solid combustible material. In some cases, cooled flue gases from downstream of the boiler are recirculated back into the primary and/or secondary combustion zone to reduce oxygen concentration and to lower combustion temperatures and, thus, are believed to enable some decrease in oxides of nitrogen formation. Disadvantages of flue gas recirculation include generally higher concentrations of products of incomplete combustion within the flue gases and within the stack gases due to reduced combustion efficiency, reduced boiler thermal efficiency, and increased capital and operating costs.
One approach to the reduction of NOx, CO, and total hydrocarbon emissions in industrial and utility boilers fired with solid fuel, waste, biomass and like-type fuels is the introduction of a fuel, such as natural gas, into the combustion products generated by the primary combustion zone.
U.S. Pat. No. 5,205,227 teaches a process and apparatus for combustion of a combustible material in which the combustible material is introduced onto a stoker grate in a combustion chamber and burned, forming a primary combustion zone. A fuel or fuel/carrier fluid mixture is supplied into the combustion chamber to create an oxygen deficient secondary combustion zone for NOx reduction and other nitrogen bearing compounds decomposition above the primary combustion zone. An oxidizing fluid is supplied into the combustion chamber above the oxygen deficient secondary combustion zone for thorough mixing with combustion products and at least partial burnout of combustibles in an oxidizing tertiary combustion zone.
A substantial amount of work has been directed to the disposal of solid waste material for the purpose of improving efficiency, reducing NOx emissions, more stable combustion and lower capital and operating costs. A substantial amount of work also has been conducted for these same reasons in connection with solid fuel fired industrial and utility boilers. See for example U.S. Pat. No. 5,957,063 to Koseki et al., which teaches a combustion system having a thermal decomposition section in which solid combustibles are thermally decomposed or partially burned so as to generate combustible gases and a combustion section in which the combustible gases are burned. The apparatus in accordance with one embodiment is a stoker-type boiler in which thermal decomposition of the solid fuel is initiated by a burner, such as a natural gas burner, disposed above the grate.
U.S. Pat. No. 5,823,122 to Chronowski et al., teaches a system for the gasification of solid biomass fuels and for combustion of the fuel gas produced therefrom comprising a gasification zone connected to a solid biomass fuel supply and to a gasification air supply, a predetermined ignition point, a pathway for conveying fuel gas from the gasification zone to the ignition point, and a combustion air injection device for mixing fuel gas and combustion air at the ignition point to initiate combustion of the fuel gas and the combustion air.
U.S. Pat. No. 5,657,705 to Martin et al., teaches a furnace for pyrolysis of solid waste material comprising a cylindrical cavity rotating around its lengthwise axis, a combustion chamber located around the cavity and injectors for introducing fuel and oxidant into the chamber.
U.S. Pat. No. 5,655,463 to Good teaches a furnace for decomposition of waste material comprising a decomposition chamber, a waste preheat chamber disposed above the decomposition chamber by which the waste material to be decomposed is preheated prior to entry into the decomposition chamber, and an afterburner chamber which operates under vacuum such that the gases and vapor from the preheat chamber and the decomposition chamber are drawn through the decomposing solid fuel.
U.S. Pat. No. 5,241,916 to Martin teaches a method for supplying combustion air during grate firings in which the primary combustion air is introduced into the fuel and secondary combustion air is introduced directly into the flow of exhaust gas and in which some of the exhaust gas is tapped off from the flow of exhaust gas and returned to the combustion process.
U.S. Pat. No. 4,848,249 to LePori et al., teaches a method and apparatus for the gasification of biomass in a fluidized bed gasifier in which the products of combustion of a fuel are passed through the distributor plate for preheating of the biomass.
Not with standing the improvements that have been made with respect to reducing pollutant emissions from utility and industrial boilers fired with solid fuel, waste, biomass and like-type fuels as exemplified by the aforementioned prior art, there remains a need for combustion processes and apparatuses which provide lower co-firing fuel consumption for the same emission reduction rate, potential for much higher emission reduction at the same co-firing fuel rate, more stable combustion, higher turndown ratio, increased firing rate and boiler thermal efficiency, and lower capital and operating costs.
Accordingly, it is one object of this invention to provide a method for combustion of a solid fuel and/or waste material which addresses the needs for further improvements as discussed hereinabove.
These and other objects of this invention are addressed by a method for combustion of a solid carbonaceous material, including solid fuels such as coal, waste, refuse derived fuels and biomass on a stoker grate in which the solid carbonaceous material is preheated and pyrolyzed in a pyrolysis zone of a stoker to form pyrolysis products, and partially devolatilized material is combusted on the stoker, forming a primary combustion zone. An oxidant is introduced into the combustion chamber downstream of, typically above, the primary combustion zone, forming a secondary combustion zone in which substantially complete combustion of the unburned products is carried out. As will be discussed hereinbelow, the solid carbonaceous material may be preheated prior to its introduction onto the stoker grate or it may be preheated after introduction into the charging zone. Introducing an overfire oxidant into the combustion chamber above the stoker grate or downstream of the primary combustion zone results in combustion of the unburned products. In accordance with a particularly preferred embodiment of this invention, preheating of the solid carbonaceous material is carried out on the stoker grate by the products of combustion from combustion of a co-fired gaseous, liquid or solid fuel which is continuously introduced directly into the solid carbonaceous material.
The method of this invention is carried out in an apparatus for combustion of a solid carbonaceous material comprising at least one wall enclosing a combustion chamber, a stoker grate disposed in a lower region of the combustion chamber, preheating means for preheating the solid carbonaceous material, and injection means for continuously introducing a pyrolysis agent into the solid carbonaceous material. In accordance with one particularly preferred embodiment of this invention, the injection means introduce the pyrolysis agent directly into the solid carbonaceous material disposed on the stoker grate.


Heated oven inlet gases enter a receiving chamber within the oven and are disbursed into the oven interior through directionally oriented, venturi-like outlets. Interior oven gases are allowed to be drawn into the resulting low pressure zones so as to mix with the inlet gases and inducing a circulation pattern within the oven interior.

Furnaces, process ovens and burn-off ovens use a temperature controlled, highly heated atmosphere to accomplish their designated objective. A "charge" of materials for processing is placed in an insulated primary chamber which is fired with combustion gases. A circulation pattern in the oven interior is initiated by the burner discharge flow, or by a separate blower, passes through or around the charge, is continued by convection and completed by the low pressure of exhaust stack draft and/or aspiration into an afterburner system.
Practitioners of the art have given us various methods for control of oven atmosphere distribution, frequently involving mechanically forced flow, as by fans, or multiple burner discharge locations. Such means have generally been adequate, albeit at the expense of greater capital expense and/or increased maintenance requirements. There is a continuing need for means to achieve uniform temperature distribution in ovens, in a form that is adaptable to all types of oven and inexpensive to manufacture.
Objects of the present invention therefore, are to provide a system and means for inducing operating atmosphere circulation to provide uniform temperature distribution and eliminate "dead spots" of stagnate gases, and "hot spots" such as caused by burner gases in a gas or oil fired oven. A second object is provide such a system without the expense and maintenance required by fans or mechanical means and yet another object is to achieve better energy efficiency for ovens.
The present invention addresses these objects with a gas flow directing and mixing device which can be adapted to virtually any oven application. Burner gases are directed into a distribution chamber, which is preferably located against an oven wall. The burner gases then flow outwardly from that chamber, through directionally oriented venturi-like ducts, so as to spread out and flow along the oven wall. Oven gases, drawn in through openings that communicate with the venturi-generated low pressure zones, mix with the burner gases and create a pattern of circulation throughout the oven interior. Thusly, in the present invention, the enhanced velocity of burner gases is used to provide uniform temperature distribution in ovens, without the need for fans or other additional complexities. In burn-off ovens, the oven gases will include combustible vapors, which provide a source of "free fuel" when drawn in and mixed with burner gases in the venturi mixer of the present invention.

Method and apparatus for circulating interior gases in an oven


An improved system and method for supporting web system services is provided for storing data and context of client applications on the web. A client application may include a web system services interface for invoking web system services to support web applications to operate over the web using different devices that may store data and context of web applications as a web application document onto a web server. A web application document may be represented by components that may include view information, content, and context information. The application may also include a web system services user interface for providing a graphical user interface for a user to invoke web system services that may include a new document system service, a store document system service, and a restore document system service. A schema for context scope may be implemented for collecting context information relevant to the web application document.

Web users are increasingly conducting their personal and professional lives online by using a variety of different applications and devices to provide functionality for communications, scheduling activities, searching and retrieving information, creating and sharing information and content, and many other applications. A variety of applications and information formats like wikis, blogs, video and audio editors, and personal social networking pages provide increasing capability of users to create and share information. Users may create any number of documents that may be shared by reference to a network location or may be sent as an encapsulated document to another user via email. For example, users might move from creating daily blog posts or myspace profiles to creating sales presentations, business reports, multimedia entertainment works, non-fiction works, or "electronic books" containing multiple media items of varying formats.
Unfortunately, there fails to be any consistent set of services supporting an arbitrary set of applications that may be used on the web and that may store content on the web accessible by any of the applications. An online user may be able to receive news headlines from RSS feeds but may not be able to store the headline news stories on the web and later access the text messages using a text-to-speech application to listen to the news headlines from a mobile device. Or an online user may be able to send and receive email attachments using client-server based email systems connected over the web, but may not be able to access the content of the attachments using a text editor executing on a handheld device. Similarly, an online user may receive a video conferencing broadcast over the web, but may not be able to store the video conference on the web and later access the video conference from storage on the web using a streaming media application on an IP video phone.
Although there may be a variety of applications commercially available for creating and storing a web page on a client computer or creating and storing a web page on a web page server, there fails to be a data and storage model for a client to create a content file on a client device and to store the content file on the web where it may be accessible by a variety of web-based applications executing on different devices. HTML-style web pages, for instance, fail to support inclusion of such varied forms of context that may be accessible by a variety of web-based applications. What is needed is a system and method that may implement a data and storage model that may accommodate an otherwise varied set of document types, applications, and device configurations so that an online user may seamlessly store and retrieve content ubiquitously using any device connected to the web.

System and method of storing data and context of client application on the web


Disclosed is a signal processing device that reduces the influence of an interfering wave to suppress the deterioration of a BER even if narrow-band noise is included in a communication band. In the signal processing device, which is capable of performing an FFT and performing a window function process as preprocessing before the FFT and achieves OFDM demodulation, the window function process is skipped to perform an FFT on a received signal if the frequency of narrow-band noise included in the received signal coincides with the subcarrier frequency of OFDM within a predetermined range. If the frequencies do not coincide with each other, the FFT is performed after the window function process is performed on the received signal. The signal processing device includes an NBN detection/determination section, which determines whether narrow-band noise is included in a subcarrier, and a window function determination section, which determines, in accordance with the degree of coincidence between the frequency of narrow-band noise and the frequency of a subcarrier, whether or not to perform the window function process.

The present invention relates to a signal processing device, a signal processing method, and a program. In particular, the present invention is preferably applicable to an orthogonal frequency division multiplexing receiver (OFDM receiver).
For an OFDM receiver used, for instance, for communication and broadcasting, a fast Fourier transform (FFT) is generally used. A signal received by the OFDM receiver has a spectrum that exhibits an impulsive peak periodically at intervals of subcarrier frequency. Therefore, demodulation is achieved by using the FFT to calculate the intensity of the signal at a frequency equivalent to the intervals of subcarrier frequency. As is well known, the FFT is a process in which a matrix operation is performed on a finite number of time-series data. More specifically, the FFT is an algorithm that assumes a waveform in which the finite number of time-series data are periodically repeated, and rapidly calculates a frequency component that is obtained when the waveform is Fourier-transformed. In reality, however, the signal actually input to the FFT cannot be expected to be a waveform that is repeated at intervals of the number of time-series data (FFT length), which is an input to the FFT. Nevertheless, the FFT makes the above assumption. It means that a waveform in which discontinuity occurs at joints between the finite number of time-series data is assumed to be an input signal. Thus, a frequency component derived from waveform discontinuities leaks into a normal frequency component. As a result, a so-called leakage error occurs. It is known that preprocessing is performed before the FFT to execute a window function in order to suppress the leakage error. For example, a Blackman-Tukey window function is well known. When a finite number of time-series signals for FFT are obtained from a sequence of time-series signals and subjected to a weighting process, the above-mentioned window function suppresses the leakage error by alleviating the discontinuities at the joints.
A technology disclosed in WO/2009/031239 enables an OFDM receiver having an FFT circuit preceded by a window function processing section to eliminate an interfering wave while performing a window function process to suppress the deterioration of a bit error rate (BER). A desired-to-undesired signal ratio (D/U ratio) measurement section is incorporated in the OFDM receiver to change the coefficients of the window function process in accordance with a measured D/U ratio. As described in FIGS. 8 and 9 and in paragraphs 0055 to 0057, the window function process is performed by selecting one window function coefficient set from two different window function coefficient sets in accordance with the measured D/U ratio. Consequently, the interfering wave can be successfully eliminated.

Signal processing device, signal processing method, and program


A semiconductor device comprises a plurality of circuit blocks, each of which performs an assigned operation, and performs a reset operation when recovering from a shutdown state of power supply, and a power control unit configured to control power supply to a power domain comprising at least one circuit block. The reset operation parameters of the plurality of circuit blocks as reset operation targets, for which power supply is resumed by the power control unit, are controlled so as to meet a power condition that makes the power dissipation of the semiconductor device by the reset operation not more than a predetermined power.

Field of the Invention
The present invention relates to a semiconductor device comprising a plurality of circuit blocks.
Description of the Related Art
In recent years, semiconductor integrated circuits are required to reduce power dissipation because of a trend toward energy saving considering environmental problems. In general, the power dissipation of a semiconductor integrated circuit formed from logic gates is roughly divided into dynamic power dissipation and static power dissipation.
The dynamic power dissipation is power dissipated by current that charge/discharge a wiring capacitance connected to a logic gate and a gate capacitance at the subsequent stage. The dynamic power dissipation can be reduced by suppressing a signal change. For example, when clock supply to a flip-flop without a signal change is suspended by clock gating, the dynamic power dissipation can be reduced.
On the other hand, the static power dissipation is power dissipated by the leakage current of a transistor in the off state and does not depend on the operating frequency. In general, power dissipation by a junction leakage current, a gate leakage current, a gate-induced drain leakage current, and a subthreshold leakage current are categorized into the static power dissipation.
The static power dissipation by these leakage currents can be suppressed by shutting down power supply (to be referred to as "power shutdown" hereinafter) to some circuit blocks of the semiconductor integrated circuits. When recovering the circuit blocks that have undergone the power shutdown to a normal operation, it is necessary to resume power supply to the circuit block and then perform initialization. Hence, reset is performed before the circuit blocks return to the normal operation.
During the reset operation, since a signal change is actively caused in a storage element such as a flip-flop in each circuit block, clock gating is not performed during the reset operation. For this reason, the power dissipation of the circuit blocks during the reset operation is larger than that in the normal operation.
In the recent semiconductor integrated circuits, the number of power shutdown target regions (to be referred to as "power domains" hereinafter, and for example, circuit blocks) tends to increase. When the plurality of circuit blocks configured to implement the functions of a semiconductor integrated circuit are arranged in different power domains, it is possible to shut down power to power domains where circuit blocks having functions that are not to be used. Unnecessary static power dissipation can thus be reduced.
Each power domain needs the reset operation (especially cancel of the reset signal) after resumption of power supply. In a general semiconductor integrated circuit, when a plurality of circuit blocks are to be reset, the circuit block unit reset operations (reset signal issuance timings or cancel timings) are synchronized to raise the processing efficiency of the entire circuit. Hence, when the reset operations overlap in the plurality of power domains, the power dissipation instantaneously increases during the reset operations.
There is proposed a technique of reducing power dissipation by dividing the frequency of clocks input to circuit blocks and lowering the operating frequency of the circuit blocks during the reset operations. There is also proposed a technique of distributing the degree of increase in power dissipation by inputting clocks to a plurality of circuit blocks at different timings.
However, to complete the reset operations of the circuit blocks, clocks as many as a predetermined number of cycles need to be input. According to the technique of lowering the operating frequency of circuit blocks, the period required for the reset operations becomes long because the operating frequency lowers, although the peak of power dissipation can be reduced to some extent. According to the technique of changing the clock timing, the frequency of clocks input to the circuit blocks is not lowered. However, the period required for the reset operations becomes long as well because the timing of input clocks changes.

Semiconductor device and method of controlling the same