The present invention relates to an article comprising a substrate having a main surface coated with a mesoporous antistatic coating, said coating having a refractive index lower than or equal to 1.5, and a silica based matrix functionalized by ammonium groups, said matrix having a hydrophobic character. Under certain conditions, the mesoporous antistatic coating is a single-layer anti-reflection coating or is part of a multi-layer anti-reflection coating. This invention further relates to a method for manufacturing said article, and to the use of a mesoporous coating having a silica based matrix functionalized by ammonium groups, as an antistatic coating.

1. Field of the Invention
The present invention generally relates to sol-gel mesoporous coatings having a silica based matrix with a low refractive index, which in addition possess antistatic properties as a result of the presence of ammonium groups within the structure thereof, and to methods for manufacturing such coatings. They are mainly intended to be provided on substrates in organic or mineral glass, especially in the ophthalmic optics field.
2. Description of Related Art
Increasingly, the trend is seeking to functionalize items made from mineral or organic glass, by depositing onto the surface thereof coatings that are a few nanometers or micrometers thick in order to impart the same a given property depending on the intended use. Thus, anti-reflection, abrasion-resistant, scratch-resistant, impact-resistant, anti-fogging, anti-fouling or antistatic layers can be provided.
It is well known that optical items, made from substantially insulating materials, have a tendency to build up static electricity charges onto their surface, especially when cleaned under dry conditions by rubbing the surface thereof using a wiping cloth, a piece of synthetic foam or polyester (triboelectricity). Charges that are present on the surface generate an electrostatic field capable of drawing and fixing very low weight-elements that are close at hand (few centimeters), generally small-sized particles such as dust, and this lasts as long as the charge remains on the item.
To reduce or prevent such particle attraction, the electrostatic field intensity should be decreased, that is to say the number of static charges present on the item's surface should be reduced. This may be obtained by making the charges mobile, for example by introducing a layer made of a material inducing amongst the "charge carriers" a high mobility. Materials inducing the highest mobility are conductive materials. Thus, a highly conductive material can disperse charges more rapidly.
The state of the art reveals that an optical item may acquire antistatic properties by incorporating onto its surface, within the functional coating stack, at least one electrically conductive layer, or "antistatic layer", both expressions being used indifferently.
Such antistatic layer most often may form the outer layer of the functional coating stack, an intermediate layer (inner layer) or be deposited directly onto the optical item substrate.
As used herein, "antistatic" is defined as the ability to retain and/or to develop a substantial electrostatic charge. An item is generally considered as possessing acceptable antistatic properties insofar as it does neither draw nor fix dust or small particles after one of its surfaces has been rubbed using a suitable wiping cloth. It can quickly disperse any accumulated electrostatic charge, so that such an item seems to be "cleaner" after wiping.
The ability for a glass to disperse a static charge resulting from the rubbing using a cloth or any other suitable method for generating an electrostatic charge (through corona discharge, . . . ) may be quantified by measuring the time necessary for said charge to be dispersed. Typically, a glass can be considered as being antistatic when the discharge time is less than or equal to 500 milliseconds. In the present application, a glass is considered as being antistatic when the discharge time thereof is less than or equal to 200 milliseconds.
Known antistatic coatings comprise at least one antistatic agent, which is generally an optionally doped (semi-)conductive metal oxide, such as tin-doped indium oxide (ITO), antimony-doped tin oxide, vanadium pentoxide, or a conjugated structure-conductive polymer.
A number of patent applications (US 2004/0209007, US 2002/0114960 . . . ) describe items provided with an antistatic layer based on conductive polymers deposited directly onto the substrate of the item and independent from the anti-reflection coating. However, conductive polymers are much more expensive than conductive metal oxides. Moreover their presence increases the refractive index and the coating absorption.
The patents EP 0,834,092 and U.S. Pat. No. 6,852,406 describe optical items, especially ophthalmic lenses, provided with an anti-reflection stack which is mineral in nature comprising a transparent, indium-tin oxide-(ITO) or tin oxide-based, antistatic layer, mineral in nature, deposited under vacuum. However, ITO-based antistatic layers do not give fully satisfactory results. As a drawback, they do suffer from non negligibly absorbing in the visible range, so that their thickness has to be relatively low so as not to be detrimental to the transparency properties of an optical item. Moreover, these layers have high refractive indices, generally higher than 1.8.
It would be advisable to provide antistatic coatings possessing lower refractive indices, especially lower than 1.5.
Preparing mesoporous coatings having a silica based matrix possessing a low refractive index due to their high porosity is well known and has been described for instance in the applications WO 2006/021698, WO 2007/088312 and WO 2007/090983, in the applicant's name.
The Japanese applications JP 2008-280193 and JP 2009-040967 describe structured mesoporous coatings with a silica matrix functionalized by NH2 groups, obtained through co-hydrolysis of a tetraalkoxysilane precursor and of an alkoxysilane precursor carrying at least one amino group, typically tetraethoxysilane and 3-aminopropyltriethoxysilane, in the presence of a base and a cationic pore-forming agent selected from surfactants comprising a quaternary ammonium group. The coating may optionally undergo a functionalization reaction of the amino groups before or after extraction of the pore-forming agent, by reacting with an organic compound which carries groups that do react towards the amino groups such as vinyl, carboxy, epoxy or isocyanate groups. The coatings are 50 to 150 nm thick, have a low refractive index (1.33-1.36), and are poorly conductive.
Publications Langmuir 2002, 18, 972-974, J. Sol Gel Sci. Technol. 2007, 43, 305-311, J. Phys. Chem. B 2002, 106, 6652-6658, Chem. Mater. 2008, 20, 4661-4668, Chem. Commun. 2003, 1146-1147 and Chem. Commun. 2004, 1742-1743 describe the preparation of mesoporous coatings having a silica-based- or a polysiloxane based-matrix functionalized by ammonium groups. They are obtained by co-condensating in acidic medium a tetraalkoxysilane- or a bis(trialkoxysilane)-bridged precursor (tetraethoxysilane TEOS or bis-(triethoxysilyl)ethane BTSE) and an alkoxysilane precursor carrying at least one amino or ammonium group (3-aminopropyltriethoxysilane or N-trimethoxysilylpropyl-N,N,N-trimethylammonium chloride) and a pore-forming agent, followed with the removal through extraction or thermal treatment of the pore-forming agent. When an amino group-carrying alkoxysilane precursor is used, an acid sufficient amount should be used so as to protonate the amino group and thus to slow down the condensation reaction of the gel-forming silanes. The pore-forming agent is generally a non ionic agent, of the ethylene oxide and propylene oxide block copolymer type or of the polyethylene glycoalkyl monoether type, but it may also be an ionic agent (cetyltrimethylammonium bromide). Both precursors are generally used according to following mole ratio: TEOS to organosilane carrying one ammonium group=1:0.05-0.667.
These mesoporous coatings having a silica based matrix functionalized by amino or ammonium groups as a drawback are sensitive to moisture since water may be easily adsorbed within the pores of the material.

Method for manufacturing a substrate coated with mesoporous antistatic film, and use thereof in ophthalmic optics

ESSILOR INTERNATIONAL (COMPAGNIE GENERALE D'OPTIQUE)


To fabricate a Schottky barrier diode in which a decrease in on current due to parasitic resistance is suppressed, variations in on current are suppressed, and an increase in off current is suppressed. The fabricating method includes the steps of forming an island-shape semiconductor film; doping the island-shape semiconductor film with a first impurity element to form a first impurity region; forming an insulating film so as to cover the island-shape semiconductor film; etching the insulating film to form a first opening and a second opening that partly expose the first impurity region; forming a mask over the insulating film so as to cover the first opening and expose the second opening; doping the first impurity region with a second impurity element to form a second impurity region; and forming a first wiring in contact with the first impurity region exposed at the first opening, and forming a second wiring in contact with the second impurity region exposed at the second opening. Since the second impurity element is added through the second opening, the periphery of the second opening is also doped with a slight amount of the second impurity element. Therefore, the first impurity region and the second wiring are located away a short distance from each other such that they are not shorted.

1. Field of the Invention
The present invention relates to a Schottky barrier diode having an anode and cathode formed on the same plane, and a method of fabricating the Schottky barrier diode.
2. Description of the Related Art
Among conventional methods of fabricating a Schottky barrier diode formed on a semiconductor substrate, there is a method which includes the steps of forming a cathode contact opening region in a silicon oxide film formed on a semiconductor substrate, selectively diffusing or introducing an impurity having the same conductivity type as the semiconductor substrate into the cathode contact opening region by an ion implantation method or the like to form an ohmic contact in a subsequent step, forming an anode contact opening region, forming a metal film on the anode contact opening region to form a Schottky junction, and forming an anode electrode and a cathode electrode (see Japanese Published Patent Application No. H2-178973).
The anode contact opening region and the cathode contact opening region are formed using masks. Therefore, when the two opening regions are positioned a short distance from each other, the anode electrode and the cathode electrode may be shorted due to misalignment of the masks. Thus, it is necessary to provide a given margin between the anode contact opening region and the cathode contact opening region. However, such as margin can be parasitic resistance between the two opening regions, which could result in a decrease in on current of the Schottky barrier diode.
In the case of fabricating a thin film transistor (TFT) and the conventional Schottky barrier diode over the same substrate, there is still a problem of the decrease in on current due to the parasitic resistance of the Schottky barrier diode.

Method of fabricating semiconductor device

Semiconductor Energy Laboratory Co., Ltd.


An integrated circuit may include an over-capability detection circuit coupled to an I/O pad which provides a shut-off signal to a latch controlling an ESD protection shunting component. The ESD protection shunting component is coupled between the I/O pad and a reference node of the integrated circuit. The over-capability detection circuit provides the shut-off signal when safe operating conditions are resumed after a voltage excursion at the I/O pad. After receiving the shut-off signal, the latch biases the ESD protection shunting component into an off-state.

Electrostatic discharge (ESD) is a continuing problem in the design, manufacture, and utilization of integrated circuits (ICs). A voltage vs time plot of a typical ESD event 100 is shown in FIG. 1. The voltage (and/or current) rises very rapidly, and falls quickly thereafter. An integrated circuit may include an ESD protection shunting component, such as an ESD protection field effect transistor (FET), connected between an input/output (I/O) pad and a reference node, for example a Vss or ground node, of the integrated circuit. The integrated circuit may further include an ESD detection circuit with a "sense" functionality coupled to the I/O pad and with a "signal out" functionality which sends a signal to a latch of the integrated circuit when an ESD event occurs. The latch may have a "gate bias" functionality which maintains an on-state gate bias at a gate node of the ESD protection FET while the ESD detection circuit signals that the ESD event is occurring. The latch may provide efficient shunting of the I/O pad to the reference node by providing a constant on-state gate bias regardless of a varying strength of the signal from the ESD detection circuit.
A problem arises when the ESD detection circuit is triggered by a voltage excursion when the integrated circuit is coupled to a power supply for normal operation. A voltage vs time plot of such a voltage excursion 102, also known as an electrical overstress (EOS) event 102, and ensuing power application 104 is also shown in FIG. 1. The EOS event 102 causes the ESD detection circuit to initiate the signal to the latch to provide the on-state bias to the ESD protection FET. The application of power 104 to the integrated circuit causes the ESD detection circuit to maintain the signal to the latch which then maintains the ESD protection FET in an on state. Thus, the ESD protection FET may be undesirably left on during normal operation of the integrated circuit, possibly disadvantageously leading to failure of the ESD protection FET and possibly to failure of the integrated circuit. EOS events as described above may occur when the power supply of a laptop or cell phone is plugged into a socket before it is plugged into the laptop of cell phone.
The risetime of the voltage excursion 102 can be slower than the risetime of the ESD event 100, as depicted in FIG. 1. Currently, circuits that trigger the ESD detection circuit with very fast rise times but do not trigger with less fast rise times are being used to avoid latching the ESD protection FET gate during an EOS event, with partial success. However, these solutions are not immune to triggering under EOS events with faster risetimes which trigger the ESD detection circuit.

Shut-off circuits for latched active ESD FET


Providing is a piezoelectric thin-film filter including resonators connected in a lattice pattern, which can achieve large attenuation at frequencies away from a passband and improve steepness near two ends of the passband without involving an additional special step. Second resonators C—2 or first and third resonators C—1 and Cx—1 connected in parallel form series-arm resonators or parallel-arm resonators C—1 connected in a lattice pattern. The capacitance of each second resonator C—2 is larger than the capacitance of each first resonator C—1. The capacitance of each third resonator Cx—1 is substantially equal to the difference between the capacitance of the second resonator C—2 and the capacitance of the first resonator C—1. The resonant frequency of the first resonator C—1 higher than the resonant frequency of the second resonator C—2. The anti-resonant frequency of the third resonator Cx—1 is higher than the resonant frequency of the second resonator C—2 and lower than the resonant frequency of the first resonator C—1.

A proposal has been made to add capacitors in order to achieve steep filter characteristics in a filter including resonators connected in a lattice pattern.
For example, as shown in FIG. 23, a proposal has been made for a circuit configuration of a surface acoustic wave (SAW) filter 1 including series-arm resonators 4 and 7 and parallel-arm resonators 8 and 9 connected in a lattice pattern between input terminals 2 and 5 and output terminals 3 and 6, and capacitors 10 and 11 connected in parallel to the parallel-arm resonators 8 and 9, respectively (for example, see Patent Document 1).
Patent Document 1: Japanese Patent No. 3389911


A liquid-liquid mixing device (10, 210) includes a barrel (20, 220) with a liquid port (23) at or adjacent one end. A plunger assembly (30) is reciprocably moveable along an axis in the barrel (20, 220) and includes a seal member (31, 231) and an agitator (50, 250). The seal member (31, 231) is in sealingly slidable engagement with the internal wall of the barrel (20, 220) to define a variable volume chamber (24, 224) therein in communication with the liquid port. The agitator (50, 250) is reciprocably moveable in the variable volume chamber (24, 224), which agitator (50, 250) includes one or more end to end passages (54) through which liquid in the chamber (24, 224) is forced as the agitator (250) reciprocates in the chamber (24, 224). The device (10) also includes a mode selector mechanism (60, 28, 46, 64, 65, 90, 92, 94, 96) for selection between at least two modes of operation for the plunger assembly, wherein the mode selector mechanism (60, 28, 46, 64, 65, 90, 92, 94, 96) is adjustable between two or more modes whereby movement of the plunger assembly (30) effects either movement of the agitator (50, 250) with the seal member (31, 231) or movement of the agitator (50, 250) relative to the seal member (31, 231), depending on the selected mode.

Liquid-liquid extraction (LLE) is one of the simplest and most widely used techniques for preparing samples for presentation to analytical instruments. It is particularly useful in separating target analytes from other components of complex matrixes and typically involves the transfer of analyte from an aqueous sample to a water immiscible solvent. However, the technique entails a number of known disadvantages, including consumption of large volumes of organic solvents, emulsion formation and, for some applications, a requirement for multiple extraction steps. Other issues include operator exposure to hazardous chemicals, operator errors and a procedure that is both time and labour intensive.
U.S. Pat. No. 4,454,231 discloses a technique in which mass transfer of a component between two initial liquid phases and physical separation of the two resultant phases are carried out in a single device. The device consists of a mixing reservoir that reciprocably slidably receives a mixer separator having a central vertical channel to a collection chamber. The two substantially immiscible liquid solutions are introduced into the mixing reservoir but thoroughly mixed by moving the mixer separator in and out of the mixing reservoir. After spontaneous separation of the two resultant phases, the upper phase is removed by pushing the mixing separator in so that the upper phase accumulates in the collecting chamber. A device that utilises the concept of this patent has been marketed as MIXXOR.
Recently, automated LLE systems have been developed but there is still significant room for improvement.
Reference to any prior art in the specification is not an acknowledgment or suggestion that this prior art forms part of the common general knowledge in any jurisdiction or that this prior art could reasonably be expected to be understood, regarded as relevant, and/or combined with other pieces of prior art by a skilled person in the art.

Liquid-liquid mixing device suitable for sample preparation by liquid-liquid extraction


An electric vehicle includes an inverter unit and an ECU. The inverter unit or the ECU includes a magnetic force estimator that estimates a magnetic force of a permanent magnet structure associated with a motor rotor of a motor unit. The inverter unit or the ECU may also include a determiner for the estimated magnetic force and an abnormalities-responsive motor drive limiter. The estimator is configured to estimate, according to a predefined rule, the magnetic force, based on at least two detection signals selected from a group consisting of a detection signal indicating a rotational frequency of the motor unit, a detection signal indicating a motor voltage of the motor unit and a detection signal indicating a motor current of the motor unit.

1. Field of the Invention
The present invention relates to an electric vehicle, such as an in-wheel motor vehicle, that is equipped with motor(s) to drive wheels and that may be battery-powered or fuel cell-powered.
2. Description of Related Art
An electric vehicle may experience degradation in performance or malfunctions of a motor serving as a drive for the vehicle. This can significantly affect the travel performance or travel safety. In particular, a battery-powered electric vehicle may include a drive system with an IPM (e.g., Interior Permanent Magnet synchronous motor). Such an IPM may include a neodymium magnet to provide a highly efficient performance, thus increasing the maximum travel range that is possible with a limited battery capacity.
In the past, an in-wheel motor drive system has been proposed in which the temperature of components such as a motor may be measured and monitored for overload, with features to limit a drive current in/to the motor or a rotational frequency of the motor according to the temperature measurements, in order to ensure reliability of the system (see the Patent Document 3 listed below).    [Patent Document 1] JP Laid-open Patent Publication No. 2006-258289    [Patent Document 2] JP Laid-open Patent Publication No. 2004-328819    [Patent Document 3] JP Laid-open Patent Publication No. 2008-168790


Latency-based power mode units for controlling power modes of processor cores, and related methods and systems are disclosed. In one aspect, the power mode units are configured to reduce power provided to the processor core when the processor core has one or more threads in pending status and no threads in active status. An operand of an instruction being processed by a thread may be data in memory located outside processor core. If the processor core does not require as much power to operate while a thread waits for a request from outside the processor core, the power consumed by the processor core can be reduced during these waiting periods. Power can be conserved in the processor core even when threads are being processed if the only threads being processed are in pending status, and can reduce the overall power consumption in the processor core and its corresponding CPU.

I. Field of the Disclosure
The technology of the disclosure relates generally to processor cores, and particularly to controlling power modes of processor cores.
II. Background
Processor-based computer systems can include one or more central processing units (CPUs) that each includes one or more processor cores for instruction execution. Each processor core includes hardware resources used to process an instruction through multiple pipeline stages. For example, processing an instruction in a pipeline may include fetching the instruction and decoding the instruction prior to sending the instruction to an execution unit, such as an arithmetic logic unit. Further, hardware resources of a processor core can be divided into separate portions known as "threads," also referred to as "hardware threads." The threads provide the processor core with the ability to process multiple instructions concurrently in parallel. More specifically, a thread within a processor core can process an instruction at the same time another thread within the same processor core processes a different instruction.
In this regard, processing instructions within a processor core contributes to the overall power consumption of the corresponding CPU. In an effort to conserve power, the CPU may employ a power control unit that is configured to control a power level of a processor core depending on the activity of the processor core. For example, the power control unit may provide a nominal power level to the processor core while at least one thread is in active status, so as to provide sufficient power to drive the hardware resources within the processor core to process instructions. However, if no threads are in active status in a processor core, the power control unit may power collapse the processor core to conserve power. In this manner, power consumption of the processor core, and its corresponding CPU, is conserved by providing nominal power to the processor core when the processor core has a thread in active status, and power collapsing the processor core when all threads are inactive.


A light emitting element includes a semiconductor layer; an upper electrode disposed on an upper surface of the semiconductor layer; and a lower electrode disposed on a lower surface of the semiconductor later. In a plan view, the upper electrode includes a first extending portion extending in an approximately rectangular shape along an outer periphery of the semiconductor layer, a first pad portion connected to a first side among four sides of the first extending portion, a second pad portion connected to a second side that is opposite to the first side, among the four sides of the first extending portion, and a second extending portion and a third extending portion, each disposed in a region surrounded by the first extending portion, the second extending portion and the third extending portion each connecting the first pad portion and the second pad portion.

1 . Technical Field
The present disclosure relates to a light emitting element that includes a semiconductor layer, an upper electrode disposed on an upper surface of the semiconductor layer, and a lower electrode disposed on a lower surface of the semiconductor layer.
2 . Background Art
There have been light emitting elements in which a "pad" is disposed on at each of two adjacent corners of an approximately rectangular upper surface of a semiconductor layer, and a "fine wire electrode" is disposed in a grid shape extending from the pad electrode, as described in JP2013-197197A.
However, with such a conventional structure, uneven emission tends to occur. Generally, a higher current density occurs in a region close to the pad to which the wire for supplying current from an external power source is connected, and even with a fine wire electrode, the current density decreases as the distance from the pad increases. As a result, stronger emission occurs near the pad, which tends to result in uneven brightness in the emission of the light emitting element as a whole.
Certain embodiments of the present invention have been devised in view of such circumstances, and an object thereof is to provide a light emitting element that can emit light more uniformly.
According to certain embodiments of the present invention, a light emitting element includes a semiconductor layer, an upper electrode disposed on an upper surface of the semiconductor layer, and a lower electrode disposed on a lower surface of the semiconductor layer. The light emitting element has an approximately rectangular shape in a plan view. In the plan view, the upper electrode includes a first extending portion extending in an approximately rectangular shape with four sides, along outer periphery of the semiconductor layer, a first pad portion connected to a first side among the four sides of the first extending portion, a second pad portion connected to a second side which is opposite to the first side, and a second extending portion and a third extending portion each disposed in a region surrounded by the first extending portion and respectively connecting the first pad portion and the second pad portion. With respect to a first straight line connecting the first pad portion and the second pad portion with a shortest distance, the second extending portion is disposed in a region closer to the third side of the four sides, and the third extending portion is disposed in a region closer to the forth side which is opposite to the third side. On a second straight line perpendicularly bisecting the first straight line, a distance between the second extending portion and the third extending portion is equal to or greater than a shortest distance between the first extending portion and the second extending portion, and equal to or greater than a shortest distance between the first extending portion and the third extending portion.
According to certain embodiments of the present invention, it is possible to obtain a light emitting element in which uneven current density on the upper surface of the semiconductor layer can be reduced, which allows for more uniform emission.


According to one or more of the embodiments herein, systems and techniques for using satellite diversity for enhancing communication confidentiality are provided. In particular, a system in accordance with the techniques herein enhances the security of encrypted messages transmitted over a secure channel, specifically through the use of satellite communications diversity to securely deliver secret messages from a sender to a recipient, ensuring message confidentiality. That is, the techniques herein provide secure message communication over satellites, particularly with additional message security in the presence of an eavesdropping adversary party by segmenting the message and sending the various message segments over different diverse paths.

When a secure message needs to be conveyed over a communication medium, a plaintext message may be encrypted using an encryption algorithm. For example, the algorithm may use a cipher key or an encryption key to encrypt the plaintext and generate an encrypted message that can be deciphered (or decrypted) by the intended recipient, while being otherwise not readable by unintended recipients. The encrypted text is also known as "ciphertext" (or "cyphertext").
It is in principle possible to decrypt ciphertext without possessing the decryption key, but, for a well-designed encryption scheme, considerable computational resources and skills are required. An authorized recipient, on the other hand, can easily decrypt the message with a key provided by (or exchanged with) the originator to recipients, but which is not provided to unauthorized users.
Adversaries who may attempt to gain access to the plaintext of a confidential communication need to first gain access to the ciphertext message and then use their computers to break the encryption code. To this end, adversaries eavesdrop on communication networks with the goal of intercepting confidential communications.
Satellites are a technology commonly used to communicate information, particularly from areas that are otherwise not accessible via other communication means. However, satellites are not safe from eavesdropping, either. More specifically, adversaries may position a spy satellite next to a communication satellite and attempt to monitor communication traffic via a communication channel. Similarly, in other scenarios, adversaries may fly an airplane or a drone in the transmission path between a user terminal (UT) and the associated communication satellite, with the goal of eavesdropping on the communication and intercepting the transmitted ciphertext data in transit.

Using satellite diversity for enhancing communication confidentiality


An apparatus and a method for cleaning wafers by a wet bench technique without incurring ammonia vapor damages to the wafer surface are provided. The apparatus of a wet cleaning tank consists of a tank body for holding a quantity of a cleaning solution therein; a conduit mounted through and vertical to a bottom wall of the tank body for feeding an ammonia-containing solution into the tank body through an outlet; and a cup-shaped container mounted in an upside-down position over the outlet of the conduit for blocking ammonia vapor generated by the ammonia-containing solution from reaching an upper cavity of the tank body. The method for cleaning wafers may be practiced by first positioning a conduit vertically through and with an outside wall of the conduit sealingly engaging a bottom wall of a liquid tank with an outlet end of the conduit immersed in a cleaning solution in the tank; then mounting a cup-shaped container in an upside-down position over the outlet end of the conduit to collect any ammonia vapors exiting the conduit and preventing the vapor from reaching an upper portion of the tank cavity.

The present invention generally relates to an apparatus and a method for wet cleaning wafers without ammonia vapor damage and more particularly, relates to an apparatus and a method for cleaning wafers with an ammonia-containing solution by trapping ammonia vapor in a cup-shaped container immersed in the cleaning solution such that ammonia vapor does not escape into the cleaning tank to attack wafers that are being cleaned in the tank.
Deionized water is frequently used in a wet bench process after a chemical process has been conducted on a semiconductor wafer. When residual chemical must be removed, deionized water rinse is used in a wet bench process for semiconductor wafer processing to perform two major functions of a quick dump rinse (QDR) and a cascade overflow rinse. Conventionally, the two functions are carried out in separate tanks in order to produce the desirable result. One of the major processing issues presented by the conventional dual-tank process is the particle re-deposition problem during a withdrawal step when cassettes are transported from a quick dump rinse tank to a cascade overflow tank. A second major issue is the large floor space required for accommodating the two tanks.
A conventional wet bench wafer cleaning process is shown in FIG. 1. The wet bench wafer cleaning process 10 for cleaning wafer 12 is carried out in six separate cleaning and rinsing tanks sequentially of a HF cleaning tank 14, a first quick dump rinse (QDR) tank 16, a SC-1 cleaning tank 18, a second quick dump rinse tank 20, a SC-2 cleaning tank 22 and a third quick dump rinse tank 24. The first HF cleaning tank is used to hold a diluted HF solution, for instance, at a concentration of 0.5% HF in H2O for removing a thin native oxide layer from the wafer surface. After the diluted HF cleaning process, the wafer 12 is rinsed in a first quick dump rinse tank 16 with deionized water. Wafer 12 is then cleaned in a second cleaning tank filled with SC-1 cleaning solution, i.e. a mixture of NH4OH, H2O2 and DI water at a ratio of 1:1:5. The SC-1 cleaning solution is used at a temperature between 70xcx9c80xc2x0 C. for a suitable time period. The wafer 12 is then rinsed again in a second quick dump rinse tank 20 that is filled with DI water. In the final stage of cleaning, the wafer 12 is cleaned in tank 22 filled with a cleaning solution of SC-2 which is a mixture of HCl, H2O2 and DI water at a ratio of 1:1:6. The wafer 12 is then rinsed in a third quick dump rinse tank 24 with DI water.
The wet bench wafer cleaning process 10 shown in FIG. 1 is conventionally used for pre-diffusion clean, pre-gate oxidation clean, pre-CVD clean, etc. For instance, in the ULSI fabrication of integrated devices, the conventional wet bench wafer cleaning process 10 can be advantageously used for wafer surface cleaning before a coating process in a CVD chamber or an oxidation process in a furnace.
Despite the fact that the conventional wet bench wafer cleaning process 10 is widely used, numerous processing difficulties of the process have been observed. For instance, during the SC-1 cleaning process carried out in tank 18, since SC-1 contains about 28% NH4OH which forms ammonia vapor in the tank cavity over the surface of the solution. When wafer 12 (or a whole wafer boat) is removed from the SC-1 cleaning solution and taken out of tank 18, ammonia vapor attacks the cleaned, bare wafer surface, i.e. the fresh silicon surface of the wafer. As a consequence, a defect known as xe2x80x9csilicon holexe2x80x9d occurs wherein craters in the silicon surface are formed due to the ammonia vapor attack.
Another processing difficulty encountered in the conventional wet bench cleaning process 10 is that, in order to perform the wafer cleaning process in a reliable and repeatable manner, the concentration and temperature of the cleaning solutions in the cleaning tanks must be maintained at constant values. For instance, during a typical wafer cleaning process, the SC-1 solution in tank 18 must be constantly replenished since the components in the SC-1 solution evaporates rapidly at a temperature higher than 50xc2x0 C. As a consequence, during a wafer cleaning process, fresh NH4OH must be constantly added into the SC-1 tank 18 in order to maintain a suitable concentration. A suitable method for monitoring the concentration of the SC-1 cleaning solution is by using an infrared analysis technique.
In a conventional method of adding NH4OH to the SC-1 tank 18, as shown in FIG. 2, wherein the tank 18 is further equipped with an outer tank (or an overflow tank) 26, the addition of the NH4OH liquid or any other ammonia-containing liquid further complicates the wafer cleaning process. The flow of NH4OH into the tank 18 causes agitation at the surface of the SC-1 liquid 28 and thus producing ammonia vapor 30 at or near the top surface of the SC-1 liquid 28. The ammonia vapor further presents a problem for attacking the bare, or freshly cleaned silicon wafer surface. This has been observed when NH4OH liquid was used to replenish either the SC-1 solution 28 in the SC-1 tank 18, or when the NH4OH liquid was used to replenish the SC-1 solution 32 in the outer tank 26.
It is therefore an object of the present invention to provide an apparatus for cleaning semiconductor wafers by wet bench that does not have the drawbacks or shortcomings of the conventional apparatus.
It is another object of the present invention to provide an apparatus for cleaning semiconductor wafers by wet bench without causing damages to the wafer surface by ammonia vapor.
It is a further object of the present invention to provide an apparatus for cleaning semiconductor wafers by wet bench without causing ammonia vapor damages to the wafer surface by minimizing the generation of ammonia vapor.
It is another further object of the present invention to provide an apparatus for cleaning semiconductor wafers by wet bench without causing ammonia vapor damages to the wafer surface by positioning a feed conduit for an ammonia-containing liquid through a bottom wall of a holding tank with outlet end of the conduit immersed in the cleaning solution.
It is another further object of the present invention to provide an apparatus for cleaning semiconductor wafers by wet bench without causing ammonia vapor damages to the wafer surface by positioning a feed conduit for an ammonia-containing liquid through a bottom wall of the holding tank with an outlet end of the conduit immersed in the cleaning solution and covered by a cup-shaped container such that any ammonia vapor generated is trapped in the container.
It is yet another object of the present invention to provide an apparatus for cleaning semiconductor wafers by wet bench without causing ammonia vapor damages to the wafer surface by positioning a feed conduit for an ammonia-containing liquid through a bottom wall of an outer tank with the liquid outlet end of the conduit immersed in a cleaning solution.
It is still another further object of the present invention to provide a method for cleaning semiconductor wafers by wet bench without causing ammonia vapor damages to the wafer surface by mounting a feed conduit for an ammonia-containing liquid through a bottom wall of a holding tank such that an outlet end of the feed conduit is immersed in the cleaning solution.
It is yet another further object of the present invention to provide a method for cleaning semiconductor wafers by wet bench without causing ammonia vapor damages to the wafer surface by mounting a cup-shaped container on top of a feed conduit for an ammonia-containing liquid such that any ammonia vapor generated is trapped by the cover that is immersed inside a cleaning solution.
In accordance with the present invention, an apparatus and a method for cleaning wafers by wet bench without causing ammonia vapor damages occurring to the wafer surface are provided.
In a preferred embodiment, a method for cleaning wafers by wet bench without causing ammonia vapor damages to the wafer surface can be carried out by the operating steps of first filling a tank with a quantity of a cleaning solution; positioning a conduit vertically through and with an outside wall sealingly engages a bottom wall of the tank with an outlet end of the conduit immersed in the cleaning solution; mounting a cup-shaped container in an upside-down position over the outlet end of the conduit in the cavity, the cup-shaped container retains ammonia vapor exiting the conduit and prevents the ammonia vapor from reaching an upper portion of the tank cavity; and flowing an ammonia-containing liquid through the conduit into the cavity of the tank to maintain a concentration of the cleaning solution.
The method for cleaning wafers by wet bench without ammonia vapor damage occurring to the wafer surface may further include the step of mounting an outer tank to the tank for receiving an overflow from the tank, or the step of filling the outer tank with an ammonia-containing liquid through a bottom wall of the outer tank. The method may further include the step of mounting the cup-shaped container to the conduit by mechanical means, or the step of mounting a particle trap to a second conduit for feeding the outer tank and for preventing contamination of the outer tank. The method may further include the step of flowing ammonium hydroxide through the conduit into the cavity of the tank to maintain a concentration of the cleaning solution, or the step of filling the tank with a cleaning solution mixture including ammonium hydroxide, H2O2 and deionized water. The method may further include the step of mounting the cup-shaped container to the conduit by plastic bolts that threadingly engage a sidewall of the cup-shaped container. The method may further include the step of providing the cup-shaped container in a dimension of between about 2 cm and about 10 cm in diameter and between about 2 cm and about 10 cm in height, or the step of immersing the cup-shaped container in the cleaning solution.
The present invention is further directed to a wet cleaning tank for cleaning semiconductor wafers by an ammonia-containing solution without causing ammonia vapor damage to the wafer surface including a tank body for holding a quantity of a cleaning solution therein; a conduit mounted through and vertical to a bottom wall of the tank body for feeding an ammonia-containing solution into the tank body through an outlet; and a cup-shaped container mounted in an upside-down position over the outlet of the conduit for blocking ammonia vapor from the ammonia-containing solution from reaching an upper cavity of the tank body.
The wet cleaning tank may further include an outer tank mounted to the tank body for receiving overflow from the tank body. The outer tank may be filled with an ammonia-containing liquid for flowing into the tank body for maintaining a concentration of the cleaning solution. The cup-shaped container may further include mechanical mounting means for mounting to the conduit, the mechanical mounting means may include plastic bolts threadingly engaging a sidewall of the cup-shaped container.
The wet cleaning tank may further include a second conduit for feeding the ammonia-containing liquid to the outer tank, the second conduit may be mounted through a bottom wall of the outer tank. The cleaning solution may include NH4OH, H2O2 and DIW (deionized water). The ammonia-containing liquid may include NH4OH. The cup-shaped container may have a dimension between about 2 cm and about 10 cm in diameter, and between about 2 cm and about 10 cm in height. The cup-shaped container may be mounted in an upside-down position with an air space therein for receiving and retaining the ammonia vapor.

Apparatus and method for wet cleaning wafers without ammonia vapor damage

Taiwan Semiconductor Manufacturing Company, Ltd


An amplifier is disclosed for providing processing of a variable RF signal, the amplifier comprising a first parallel gain stage and a plurality of second parallel gain stages electrically disposed between an input fixed impedance matching circuit and an output fixed impedance matching circuit. Wherein in operation each of the first parallel gain stage and plurality of second parallel gain stages are for processing the variable RF signal according to at least a characteristic of the RF power or frequency range. Each of the plurality of second parallel gain stages comprising a tunable impedance matching circuit such that when the second parallel gain stage is in operation the tunable impedance matching circuit providing a transformation of impedance to match between the second amplifier and output fixed matching circuit within the frequency range, and other than providing a match within the frequency range when not in operation.

In recent years, the use of wireless and RF technology has increased dramatically in portable and hand-held units, where such units may be deployed by a variety of individuals from soldier on the battlefield to a mother searching for her daughter's friend's house. The uses of wireless technology are widespread, increasing, and include but are not limited to telephony, Internet e-mail, Internet web browsers, global positioning, photography, and in-store navigation.
Within each hand-held or portable wireless device there is a highly sensitive chain of RF electronics providing both the transmission and receiver functions. These circuits require not only direct manipulation of the RF signal, for example by amplification, attenuation, mixing or detection, but also ancillary functions such as power monitoring, signal identification, and control. Additionally these functions may be undertaken post-mixing, such that the signals are at a lower RF frequency (typically called the IF or Intermediate Frequency) than the original received signal.
Increasingly therefore such wireless electronics must provide simultaneous optimization of the function at lowest cost whilst also offering:                Wide dynamic range for maximum coverage from wireless infrastructure,        Flexible operation at high and low power levels for transmit and receive functions in same wireless device,        Operation on multiple frequencies to provide single wireless device with widest coverage against multiple worldwide standards, and        Low power consumption under all conditions to provide maximum standby and use times for user.
In today's commercially demanding requirements for providing highly adaptive amplification within wireless devices, with multiple frequency regimes, multiple international protocol standards, widely ranging microwave signal levels and the commercial benefits of achieving these in wireless devices with smaller physical size, using lower cost components, which leads to minimizing die footprint on semiconductor manufacturing techniques.
It would be advantageous to provide for a design solution for microwave amplifiers exploiting parallel gain circuits to supports these demands, whilst reducing power consumption, thereby providing for increased battery lifetime.
It would be further advantageous if the approach provided for a solution that allowed for increased semiconductor integration by reducing number and/or type of elements required, provided enhanced manufacturing efficiency and eliminating a need for a large quantity of bulky discrete external components.


A device for supporting adjacent bony portions includes a body having a first end and an opposite second end. The body is positionable in a space between the adjacent bony portions with the first and second ends oriented toward respective ones of the adjacent bony portions. At least one of the first and second ends includes bone engaging surfaces. An end member substantially covers the bone engaging surfaces with a bio-absorbable material on at least one end of the body. The end member providing a smooth surface profile to facilitate insertion of the body in the space between the adjacent bony portions.

The repair and reconstruction of bony structures is sometimes accomplished by directly fixing adjacent bony portions to each other, such as by a plate. In other instances, bone growth inducing material can be introduced between the adjacent bony portions, which over time results in a solid bony connection. In some instances, the adjacent bony portions are supported by an implant positioned therebetween as the bone heals or the bone grows between the adjacent portions. In order to secure the implant in the space between the adjacent bony portions, the bone engaging ends of the implants can be provided with bone engaging surfaces. The bone engaging surfaces, however, can cause undesired cutting or tearing of tissue as the implant is positioned in the desired location between the bony portions. Positioning of the implant can be difficult if the implant engages tissue as it is moved into position.

Bone supporting devices with bio-absorbable end members


The present disclosure provides a method for preparing a display panel, a display panel and a display device including the same. The method includes: providing a transparent substrate; and preparing a display structure and a protective film layer covering the display structure on the transparent substrate, in which the preparing the display structure includes: forming a pixel unit array and a lead metal layer on the transparent substrate; and forming a laser barrier layer on a surface of the lead metal layer away from the transparent substrate, in which an orthogonal projection of the laser barrier layer on the transparent substrate partially covers that of the lead metal layer on the transparent substrate.

At present, in the preparation process of the display panel, a plurality of display panels is usually prepared on a transparent substrate, and protective films are attached on the upper surface and the lower surface of the substrate on which the plurality of display panels is formed, respectively. Then, the entire transparent substrate on which the plurality of display panels is formed is cut by a cutting process, to form a plurality of separate display panels. As for an organic light-emitting diode (OLED) display device, since the transparent substrate of the OLED and the thin film transistor array is usually a flexible substrate made of a plastic material, and the protective film is usually also made of a plastic material, the conventional glass cutting process cannot achieve cutting. Typically, a laser process is used to perform the above cutting steps.

Method for preparing display panel, display panel and display device


The invention describes biodegradable calcium phosphate cements, in particular mixtures of calcium phosphate-containing powders of different stoichiometric composition, the precipitated hydroxylapatite present being a cation-deficient hydroxylapatite of the formula 1, with the result that the mixtures have improved properties with regard to compressive strength.

The prior German Patent Application P 198 13 614.5 relates to biodegradable calcium phosphate cements, in particular mixtures of calcium phosphate-containing powders of different stoichiometric composition having improved properties. These mixtures all comprise tricalcium phosphate (TCP) and one or more other phosphate-containing inorganic compounds of different composition, the TCP content being present in a well-defined particle size range. Essential for the invention was the fact that a specific fraction of fine particles (about 1-40 xcexcm) and very fine particles (0.1-1 xcexcm) must be present in addition to a specific fraction of coarse particles (40-300 xcexcm).
A teaching of the present invention is based on the object of further improving biodegradable calcium phosphate cements of the type described. Here, the following considerations are particularly important: Up to the end of 1997, only prototypes of biocement D (for composition, cf. DE 19813614.5) were known. Characteristic of these prototypes were their adequate properties with respect to miscibility, cohesion time, dough time and initial and final hardening time according to ASTM C266, but the compressive strength never reached values greater than 50 MPa. It was thus only in the region of trabecular human bone (Driessens et al., Bioceramics 10 (1997) 279-282). Commercial TCP was used as the crystallization nucleus (cf. DE 19813614.5).
An object of the present invention is to achieve biocements having compressive strengths greater than 50 MPa, which are even in the region of the cortical bone with respect to strength, without these biocements exhibiting adverse changes with regard to processing times and cohesion.
Upon further study of the specification and appended claims, further objects and advantages of this invention will become apparent to those skilled in the art.
This and other objects are achieved, according to the invention, by using a specially prepared, precipitated hydroxylapatite (PHA), this serving as a crystallization nucleus or nucleating agent for the formation of the carbonized apatite, formed during the hardening reaction, from biocement D. Surprisingly, it is thus possible to achieve compressive strengths of 70-80 MPa after the hardening (cf. Tab. 1 and FIG. 1).
An aspect of the present invention thus relates to a mixture of powders which are suitable for the preparation of absorbable calcium phosphate cements, comprising tricalcium phosphate (TCP) in which about 30-70% of the TCP particles have a particle size of about 0.1-7 xcexcm and about 10-60% have a particle size of about 40-100 xcexcm, precipitated hydroxylapatite (PHA) and at least one further other phosphate-containing inorganic compound, the PHA being a cation-deficient hydroxylapatite having the composition
Ca8.75V(Ca)1.25[(HPO4)5.5-x(CO3)0.5](OH)xV(OH)2-x
with values for x between 0 and 2.
It was found that the precipitate formed during the setting and hardening phase from biocement D is a carbonized cation-deficient hydroxylapatite of the above-mentioned empirical formula. V(Ca) and V(OH) are Ca and OH voids in the crystal lattice. The values for x depend in turn on the structurally related water content of the apatite. It was furthermore found that the structure and composition of the PHA used to date as a nucleus for the preparation of the biocement D prototype, the so-called TCP, differs considerably from those of the cation-deficient hydroxylapatite described above. The TCP used in the prior art (cf. DE 198 13614) comprises, as the main phase, apatite which however comprises very little carbonate (CO2 content less than 0.2%) and, as secondary phases, monetite. This led to the conclusion that it is necessary to prepare a more highly carbonized, precipitated cation-deficient hydroxylapatite which has a structure similar to that established during the setting and hardening of the biocement D. The preferred CO2 content for the TCP of the present invention is about 0.2 to 10%. Such a material should be more suitable as a nucleating agent for the reaction of the biocement D. The preparation of the PHA is most simply carried out by conversion of three salts according to the following reaction:
8.25 CaSO4.2H2O+5.5 Na3PO4.12H2O+0.5 CaCO3xe2x86x92Ca8.75V(Ca)1.25[(HPO4)5.5-x(CO3)0.5](OH)xV(OH)2-x+8.25 Na2SO4 +(82.5xe2x88x92x)H2O
Instead of the CaSO4.2H2O, other calcium salts of strong acids, such as, for example, an anhydrate or hydrate of calcium chloride or calcium nitrate, can also be used. However, the disadvantage thereof is the high deviation from stoichiometry, so that it is not possible to predict with certainty how much calcium is contained proportionately in the three salts.
In order to obtain a cation-deficient hydroxylapatite, the solution should have a pH between about 7 and 9, preferably between about 7 and 8. This is best achieved by dissolving Na2HPO4 or K2HPO4 or NaH2PO4 or KH2PO4 or a mixture thereof in an aqueous solution, in which the three above-mentioned salts are then correspondingly dissolved. The primary salts of phosphoric acid additionally have the advantage that they liberate CO2 from the CaCO3 of the biocement D powder mixture and thus enlarge or increase its porosity, which makes it possible to increase the remodelling rate.
A further precondition is the particle size of the PHA. In order for it to be suitable as a nucleating agent in biocement D, H or F (cf. DE 19813614.5), the particle size should be between about 0.5 and 10 xcexcm, preferably between about 0.5 and 5 xcexcm. This is achieved by dissolving magnesium chloride and/or magnesium sulfate and/or magnesium nitrate and/or one or more of their hydrates in an aqueous solution in which the reaction to give the PHA is carried out and in which the magnesium salts are dissolved, preferably before the three salts according to the above-mentioned equation are mixed in. The precipitate of PHA in the solution should be stored for a relatively long time at room temperature in order to complete the incorporation of the carbonate anions into the PHA. In order to avoid crystal growth of the precipitate increases in temperature should be avoided. Thereafter, the precipitate is removed from the aqueous solution, for example by filtration or centrifuging, the precipitate being washed with an excess of an aqueous solution comprising a neutral electrolyte, in order to remove sodium and sulfate ions. Traces of these ions in the PHA of the order of magnitude of about less than 0.1% by weight are acceptable. Preferably Na or K salts, in the form of chlorides and/or sulfates and/or nitrates and/or one or more of their hydrates, are used as neutral electrolytes. The reason for using these neutral electrolytes in the wash solution is to prevent the swelling and the disproportionation of the precipitate. After washing of the precipitate, it is dried overnight at about 120xc2x0 C. In order to avoid aggregation, the drying should not be carried out for more than 16 h. The PHA thus prepared is then ready for use for the preparation of the final biocement D powder.
The PHA according to the invention can be used not only for the preparation of biocement D but also for the preparation of cement mixtures F and H. The compositions and mixing ratios of the biocements D, F and H are disclosed in WO 99/49906. As already mentioned above, however, a PHA of a different composition was used in these biocements.
In a preferred embodiment, the content of PHA is about 1 to 5% by weight, based on the total dry mass. More preferably, the PHA content is about 1.7 to 2.7% by weight, based on the total dry mass of the biocement.
Suitable compounds which can be mixed with TCP are in general all inorganic compounds which comprise calcium and phosphate. The compounds which are selected from the following group are preferred:
CaHPO4, carbonate-containing apatite and CaCO3.
The mixtures according to the invention can, if desired, also comprise known setting accelerators. Disodium hydrogen phosphate is preferred here.
Furthermore, it is desirable to mix with the mixture pharmaceutical active ingredients which have a very wide range of actions. Examples of such active ingredients are growth factors, such as FGF (Fibroblast Growth Factor), BMP (Bone Morphogenetic Protein), a growth factor from the TGF-xcex2 super family, TGF-xcex2 (Tissue Growth Factor), or other active ingredients, such as prostaglandins. Owing to their structure, the biocements are capable of releasing the active ingredients into the environment within a few days after the implantation.
Furthermore, it is useful to add antibiotics or disinfectants to the mixture according to the invention, as temporary protection from population with germs during the implantation, analogously to the known mixtures according to WO 99/49906.
The invention also relates to a corresponding mixture in the form of an aqueous solution, paste or suspension and its use for the preparation of biodegradable implantable synthetic bone materials.
In the foregoing and in the following examples, all temperatures are set forth uncorrected in degrees Celsius; and, unless otherwise indicated, all parts and percentages are by weight.
The entire disclosure of all applications, patents and publications, cited above and below, and of corresponding European Application No. 00110045.2, filed May 12, 2000 is hereby incorporated by reference.
The PHA is prepared according to the following example.

Biocements having improved compressive strength


A switchable valve train member, such as a deactivating valve lash adjuster or a deactivating hydraulic valve lifter, including a pin housing slidably disposed within an axial bore in a body. A transverse bore in the pin housing contains a retractable locking pin that engages a feature in the body including a locking surface whereby the body and the pin housing are locked together for mutual actuation by rotation of a cam lobe. A lash ring at the outer end of the body includes a portion extending into the axial bore that limits the travel of the pin housing within the body and thereby sets the internal mechanical lash in the switchable member. The axial thickness of the lash ring may be varied between assemblies to compensate for manufacturing variation in the components and is secured to the body in any of various configurations.

It is well known that overall fuel efficiency in a multiple-cylinder internal combustion engine can be increased by selective deactivation of one or more of the engine valves, especially the intake valves, under certain engine load conditions. For cam-in-block engines, a known approach to providing selective deactivation is to equip the hydraulic valve lifters for those valve trains with means whereby the lifters may be rendered incapable of transferring the cyclic motion of the engine cam into reciprocal motion of the associated valves. For an overhead-cam engine, a known approach is to equip the hydraulic lash adjusters for those valve trains with means whereby the rocker arm may be rendered incapable of transferring the motion of engine the cams into reciprocal motion of the associated valves.
Typically, a DHLA includes, in addition to the conventional hydraulic lash elimination means, a concentric inner pin housing and outer HLA body which are mechanically responsive to the force of the rocker arm as exerted by the cam lobe, and which may be selectively latched and unlatched hydromechanically to each other, typically by the selective engagement of pressurized engine oil on locking pins.
An important consideration in a DHLA is the amount of internal mechanical lash deliberately incorporated into the DHLA. In prior art DHLAs, a transverse bore in the pin housing contains the two opposed locking pins which are urged outwards of the pin housing by a pin-locking spring disposed in compression therebetween to engage a circumferential groove including a locking surface in the inner wall of the HLA body whereby the HLA body and the pin housing are locked together to produce reciprocal motion of a rocker arm disposed on the DHLA. When valve deactivation is desired, the pins are withdrawn from the DHLA body by application of hydraulic fluid such as engine oil to the outer ends of the pins at pressure sufficient to overcome the force of the pin-locking spring.
Prior art DHVLs, such as shown in U.S. Pat. No. 6,578,535, typically are assembled from a top end of the DHVL body (which is closed at its bottom end) by insertion of components through the open top end and securing the components with one or more retaining rings and the like, fitting into an annular groove formed in the inner wall of the DHVL body below the open end thereof. The rings also serve to set internal mechanical lash in the DHVL by the selection of rings of appropriate thickness during assembly of the DHVL. The rings act as a mechanical stop to limit the outward motion of the pin housing prior to engagement and disengagement of the locking pins. Preferably, the lash rings permit the pin housing to travel to a position wherein the locking pins can clear the bottom surface, or ledge, of the locking feature in the DHVL body by a small amount, typically about 0.005 inches or less. Excess internal mechanical lash results in clatter and wear of the DHVL during engine operation, and can have an adverse effect on the lift characteristics of the associated valve. Thus, controlling the axial position of the underside of the retaining rings with respect to the ledge of the locking feature is of critical importance.
Typically, because of variation in manufacturing tolerances of the body, pin housing, and pins, the correct lash is obtained only by iterative trial and measurement using rings of differing thickness. However, setting the lash in this fashion is difficult, requiring repeated assembly and disassembly of the pin housing from the DHVL body because accessing the lash-setting retaining snap rings to remove the pin housing once installed is difficult and complicated.
Further, in cases where the wall of the DHVL body is thin because of packaging constraints, the presence of an inner-wall annular groove for the retaining rings near the open end of the DHVL body structurally weakens the wall of the body.
Referring to U.S. Pat. No. 6,513,470, a spring seat is shown for an external lost motion (LM) spring in a DHVL, wherein the spring seat also functions as a variable-thickness shim for setting the internal mechanical lash in each valve deactivation assembly. The spring seat is held in place by the LM spring that is captured by a spring tower. The spring seat rests on the outer end of the lifter body and also includes a cylindrical portion that extends into the lifter bore to engage the pin housing therein, the cylindrical portion being selectively varied to control mechanical lash. Thus, the seat serves to control mechanical lash without a requirement for a retaining groove in the inner wall of the lifter bore.
This latter approach for setting lash is not adaptable to current DHLAs since, in prior art DHLAs, the LM spring is internal to the assembly, and thus there is no spring seat requirement at the outer end of the body.
What is needed in the art is an improved DHLA wherein components are easily assembled, wherein mechanical lash is easily set, and wherein an annular groove for locking a retaining ring is obviated.
It is a principal object of the present invention to reduce the cost and complexity of an improved DHLA, to improve the ease and reliability of assembly thereof, and to increase the operating reliability thereof.

Mechanical lash ring for a switchable valve train member


A cooling fan module is disclosed. The cooling fan module includes a module housing, a fan assembly, a fan control circuit board, and an electrical connector. The fan assembly is disposed within the module housing and includes a fan housing, a motor disposed within the fan housing, and a blade assembly coupled to the motor. The fan control circuit board is disposed between the module housing and the fan housing, and is coupled to the motor. The electrical connector is coupled to the fan control circuit board and projects outside of the module housing.

Computer systems include numerous electrical components that draw electrical current to perform their intended functions. For example, a computer's microprocessor or central processing unit ("CPU") requires electrical current to perform many functions such as controlling the overall operations of the computer system and performing various numerical calculations. Generally, any electrical device through which electrical current flows produces heat. The amount of heat any one device generates generally is a function of the amount of current flowing through the device.
Typically, an electrical device is designed to operate correctly within a predetermined temperature range. If the temperature exceeds the predetermined range (i.e., the device becomes too hot or too cold), the device may not function correctly, thereby potentially degrading the overall performance of the computer system. Thus, many computer systems include cooling systems to regulate the temperature of their electrical components. One type of cooling system is a forced air system that relies on one or more cooling fans to blow air over the electronic components in order to cool the components.
The cubic feet per minute ("CFM") of air that can be moved across an electric device is an important factor in how much heat can be removed from the device. Thus, the capacity of a cooling fan is a critical factor in selecting an air mover for use in a cooling application. The CFM that a cooling fan can produce is governed a number of factors including: the total area of the blades generating the airflow, the free area provided for airflow through the fan, the design of the blades, and the power generated by the electric motor.

This patent is subject to a terminal disclaimer.

Hewlett-Packard Development Company, L.P.


An automated message processing system communicates with a digital data processing machine, for example, in replacement of a human operator. The automated message processing system receives messages from a digital data processing machine. The received messages may include immediate-response messages as well as delayed-response messages. Each received message is selectively routed to one of many specialized expert local facilities (ELF) for performance of a designated function, such as generation of an appropriate output message. Each ELF may also generate output messages in response to other stimulus, such as expiration of a timer or receipt of a message from another ELF or an external source. The output message is formatted appropriately and ultimately transmitted to the digital data processing machine.

1. Field of the Invention
The present invention relates to a system that processes and responds to messages generated by a digital data processing machine. More particularly, the invention concerns an apparatus, article of manufacture, and method for receiving both immediate-response and delayed-response messages from a digital data processing machine, selectively routing the messages to specialized expert local facilities (ELFs), performing designated functions at the ELFs, generating an appropriate output message, and transmitting the output message to the digital data processing machine.
2. Description of the Related Art
Many different machines require operator supervision. Although automation is increasing, some type of management by an operator is still required for many simple machines such as drill presses, facsimile machines, and sewing machines. With more complicated machines, an operator is even more important, to perform critical and often complicated duties.
For example, most mass data storage systems require some type of operator support. Such data storage systems often store customer data on magnetic tapes, magnetic disk drives, or a combination of the two. These systems need an operator to perform error/exception handling, to backup data, to configure hardware devices, and to perform other functions. Furthermore, in storage libraries employing portable data storage units, such as tapes, operators must manage the media pool. This involves, for instance, supplying blank media, labelling tapes, advising the system when new tapes are introduced, and the like.
Thus, the operator provides the mass storage system with a number of benefits. On the other hand, use of an operator also comes with a number of drawbacks. One drawback, for example, is the cost of paying a highly trained person to monitor the data storage system. It may even be necessary to have an operator at hand twenty-four hours a day in systems that store particularly important data, such as automated teller machines, telephone directory information, internationally accessible data, and the like. In these systems, the cost of the operator can be substantial.
Another drawback of human operators is the potential for human mistakes. And, with human operators comes the possibility of human work scheduling problems. The operator's absence from the data storage system at a critical time may have serious consequences. For example, recovery from certain types of system errors may be impossible without operator intervention, thus rendering the entire storage system inoperative.

Automated message processing system having a plurality of expert local facilities responsive to messages routed thereto to perform predetermined actions

International Business Machines Corporation


A speech recognition apparatus and method that can improve speech recognition rate and recognition speed by reflecting information for dynamic display, are provided. The speech recognition apparatus generates a display variation signal indicating that variations have occurred on a screen and creates display information about the varied screen. The speech recognition apparatus adjusts a word weight for at least one word related to the varied screen and a domain weight for at least one domain included in the varied screen, according to the display variation signal and the display information. The adjusted word weight and the adjusted domain weight are dynamically reflected in a language model that is used for speech recognition.

1. Field
The following description relates to an apparatus and method for speech recognition, and more particularly, to a speech recognition apparatus and method that allows a user to input vocal commands to manipulate a display.
2. Description of the Related Art
Recently, applications, such as three-dimensional simulations or games are becoming more popular. Users may search for desired information directly or indirectly while viewing the application on a display. The display on which such an application is executed may have a dynamic structure that varies over time or according to a user's manipulations. While viewing the dynamic display, a user tends to concentrate his or her efforts on execution of the application. Accordingly, a speech recognition method may be useful to allow the user to interact with the display without the use of focusing his or her attention on inputting commands via a keyboard or via a touch screen.

Method and apparatus for recognizing speech according to dynamic display


Provided is an information processing apparatus (100) including: an image acquiring unit (112) that acquires captured image information of a sample (20) dyed with a fluorescent dye reagent (10), an information acquiring unit (111) that acquires information related to the fluorescent dye reagent (10), a correcting unit (131) that corrects the luminance of the captured image information using a fluorescence fading coefficient that represents the rapidness at which the fluorescence intensity of the fluorescent dye reagent (10) drops, the fluorescence fading coefficient being included in the fluorescent dye reagent (10), and a calculating unit (132) that calculates information corresponding to fluorescent molecules in the captured image information, using the corrected luminance.

Having been conventionally known is a fluorescence microscope capable of generating fluorescence by irradiating an object to be observed that is dyed with a fluorescent dye reagent, with an excitation ray, of capturing an image of the fluorescence, and of outputting the resultant captured image information. In relation to the fluorescence microscope, because the brightness of the object to be observed is low compared with that in an ordinary microscope (bright-field microscope) for visible light, it is necessary to expose the imaging device to the excitation ray for a long time period, and the noise is likely to become included in the captured image information as a result of the extended exposure. Therefore, various technologies have been developed to remove the noise from the captured image information of the fluorescence.
For example, Patent Literature 1 listed below discloses a technology capable of removing noise more appropriately when tiling is applied to an image of an object to be observed that is dyed with a fluorescent dye reagent (when the image is divided into tiles), using a fluorescence microscope.

Information processing apparatus, information processing method, information processing system, and computer program


A method and system for detecting fraud in an electronic session performed over a network, the session including communications between a purported customer and a bank operating system, the communications from the customer including headers. The method including inputting the headers, including header attributes, from the purported customer during the session; comparing the header attributes from different communications during the session; determining that the comparison of the header attributes are irregular; and flagging, based on the determining that the comparison of the header attributes are irregular, the session as suspect.

Financial institutions typically use very well known techniques for limiting fraudulent access to secure systems. In particular, larger financial institutions use commonplace methodologies to allow access to a web site, such as the well known user ID and password, followed by a soft token on their computer, such as a cookie (so as to authenticate the computer). A machine signature is often used. A machine signature is a compilation of attributes about the computer, such as software related attributes, IP address and other information. This various data, in the form of a header, and specifically a "https: header" for example, allows access onto a bank's web site. Technically speaking, the "https header" refers to the data that is placed at the beginning of a string of data that is being transmitted. The header contains various attributes about the session (including time information) and the way in which the data should be handled. The criminal element collects this various information and replays it, so as to gain access onto a web site (and so as to appear to be the customer). In particular, the information may be collected to obtain one element to gain access to the site, i.e., that one element being a device signature/GUID (Globally Unique Identifier), for example. The information may well be collected via crimeware.
The current known technology is in some respects lacking in the ability to recognize unauthorized access when crimeware is used.

Systems and methods for performing network counter measures


A removable safety barrier for a construction site pit, in which piles support the sides of the pit, and having a plurality of upright barrier posts at spaced intervals, supported on the piles, the barrier posts extending below grade level around the edge of the construction pit and also above grade level; a plurality of retention panels, shaped to fit between adjacent posts; personal barrier supports secured to the barrier posts above grade level; and personal barrier members supported in the supports, extending substantially transversely between the upright barrier posts, and the retention panels being located below grade level extending between the barrier posts.

In the construction of buildings, a pit is usually excavated into which the footings and underground portions of the building will be erected. It is common for excavations to go down three or four floors at least. The sides of the pit are usually substantially vertical, and in order to support the earth around the pit, I-beams or piles, are installed at intervals. These beams or piles are driven in by pile drivers, down into the earth prior to or during excavation, as well known in construction practice. Side Wall panels, such as concrete or the like, are then formed or placed between the vertical I-Beams as excavation continues downwardly. In this way the sides of the pit are maintained and supported, without collapsing into the pit. It is however, not an unusual experience for the concrete or side wall panel material or earth around the upper edge of the pit at or close to ground level, will start to deteriorate and portions of debris may fall down into the pit. This is both hazardous, and also constitutes material which must eventually be removed for the construction of the underground portion of the building to proceed uninterrupted.
In addition to this, while the pit is being excavated, and even after the underground portion of the building has been erected, the edge of the pit remains a hazard to workers and pedestrians alike. It has been the practice for years to install safety barriers around the grade level edge of such a pit, in order to prevent any accidents occurring to workers and pedestrians around the edge of the pit.
In addition to this, it is now becoming desirable to install some protective barrier extending from the grade level edge of the pit downwardly, so as to then prevent debris falling from the upper portions of the wall panel materials holding the earth in place.
The erection of such barriers, both below grade level and above grade level is becoming an essential feature of modern day construction. Numerous forms of safety barriers have been proposed in the past, which can be erected around an open pit at grade level. However, these prior proposals are not generally suitable for erection around major excavations such are the practice in the erection of high rise buildings. In these cases, excavation will start and the piles will be driven into the earth around the perimeter of the excavation. Once excavation has removed more than a small portion of the earth, it becomes difficult to erect a safety barrier around the perimeter. The safety barrier should be securely erected so as to retain the earth and wall panels around the upper edge of the pit or excavation. In addition, the safety barrier preferably will extend above the perimeter of the pit, ie. above grade level, for personal safety. Securing such a safety barrier in position around a large excavation is a difficult and challenging problem. In addition, since the construction of the barrier will involve a substantial cost and material resources, it is desirable, as far as possible, that it is capable of being removed when the building is completed, or at a stage where the site is no longer hazardous, and the barrier can then be reinstalled around a new building site.

Removable and re-useable construction safety barrier


Method for determining temperature ranges at which a selected gas evolves from a specimen of a selected material, bulk or surface of a metal, semiconductor, or insulator, and the probable source of that gas in each such temperature range. A specimen is placed in an evacuated and baked-out tube, and the specimen temperature T is increased according to a selected time-dependent temperature pattern over a temperature range. As temperature T(t) increases, pressure p(t) of any gas evolving in the tube is measured for a sequence of times t. A total pressure derivative, dp/dT=(dp/dt)(dT/dt).sup.-1, is determined, identifying one or more peak temperatures, each having a peak temperature range corresponding to specimen emission of at least one gas by breaking a bond containing an atom or molecule of that emitted gas. Partial pressure rises in the tube at each peak temperature are monitored and converted to an equivalent gas concentration. In a second embodiment, two tubes, with only one containing a specimen, are used for analyzing the differential pressure .DELTA.p=p1- p2 and differential pressure derivative d(.DELTA.p)/dT. In a third embodiment, both tubes contain specimens, and one or more peak temperatures are identified. In each embodiment, composition, partial pressures and concentrations of gases evolved at a peak temperature are optionally determined by residual gas analysis of another specimen in another tube, heated to and held at a peak temperature.

1. Field of the Invention
This invention relates generally to analytical instruments and more particularly to instruments that detect trace amounts of gases.
2. Background of the Technical Art
Plasma deposition of silicon nitride, silicon dioxide or amorphous silicon is a common processing step in fabrication of integrated circuits (ICs) in active matrix liquid crystal displays. Plasma deposition of such material usually occurs at low pressures, promoted by the presence of energy from a radiofrequency discharge or similar energy source.
Plasma deposition differs from deposition of pyrolytic silicon nitride and similar insulator materials by chemical vapor deposition (CVD) techniques in several respects. First, considerable bond scrambling occurs, wherein some bonds are broken and other bonds, which give rise to different molecular species, are formed. Second, plasma-deposited silicon nitride has no fixed stoichiometry (such as Si.sub.3 N.sub.4) and is more accurately described as a polysilazane, Si.sub.x N.sub.y H.sub.z, containing varying combinations of Si, N and H.
Semiconductor device performance often degrades after silicon nitride is used as a final passivation film for an IC, or after an anneal cycle to reduce plasma damage or improve electrical contact resistance. Silicon nitride has low hydrogen permeability so that free hydrogen can become trapped under a silicon nitride layer, or within this layer. Hydrogen evolution during subsequent high temperature processing is often the cause of such degradation, but IC manufacturers have had only limited methods to determine how such evolution occurs. The presence of hydrogen in plasma-deposited silicon nitride is confirmed by absorption spectrum analysis of such a compound, which manifests N--H and Si--H stretching bonds at the well known wavenumbers of 3350 cm.sup.-1 and 2160 cm.sup.-1, respectively.
The hydrogen evolved during subsequent application of high temperatures may be lightly bound interstitial hydrogen or may arise from bond breaking in compounds such as SiH and SiH.sub.2 in hydrogenated amorphous silicon (a-Si:H), NH and NH.sub.2 in nitride, and SiOH and trapped H.sub.2 O in oxide films. The particular bonds that are present are important because different bonds are broken in different temperature ranges, and a temperature cycle for a particular process may include some or all of these temperature ranges.
Plasma-deposited silicon nitride, used as an encapsulant, as a gate dielectric and as an etch stop for IC fabrication, has been observed to degrade after cycling through the high temperatures used for annealing, for cure of plasma damage, for improvement of contact resistance, or for general semiconductor processing. The presence of hydrogen has been determined to be responsible, in large part, for this degradation. Plasma-deposited silicon nitride has no fixed stoichiometry and is best described by the general chemical formula Si.sub.x H.sub.y N.sub.z, with x, y and z variable. Plasma-deposited silicon nitride often contains 10-30 atomic percent hydrogen, as interstitial hydrogen or in a chemical form such as SiH.sub.2, NH.sub.2, SiH or NH. The bonding strengths of the four molecules SiH.sub.2, NH.sub.2, SiH or NH differ and are known to increase in that order. Silicon nitride, once formed, has low permeability to hydrogen and H.sub.2 O and can trap hydrogen evolved from the layer below the passivation film. It is difficult to determine the source(s) of the hydrogen that degrades the silicon nitride film, and no equipment is presently available that allows identification of the source(s) of this hydrogen.
A similar problem is encountered in use of amorphous silicon films for active matrix LCDs, solar cells and other photo-imaging tools. Amorphous silicon is often prepared using plasma-enhanced chemical vapor deposition, and the hydrogen content in a-Si:H is typically 10 atomic percent. The stoichiometry of a-Si:H is also not fixed, and this compound is best described by the chemical formula SiH.sub.y with y variable. Free hydrogen in a-Si:H passivates the dangling bonds and reduces the spin density so that the field effect charge carrier mobility in a thin film transistor increases. The carrier mobility value determines whether the a-Si:H film is suitable for AMCLD applications. Thus, it is important to determine the hydrogen content and hydrogen source(s) for amorphous silicon films.
Silicon nitride is used as a gate dielectric etch stopper and for passivation in AMCLD. Device reliability heavily depends upon the hydrogen bond stability in the silicon nitride film.
Lanford and Rand, in Jour. Appl. Phys., vol. 49 (1978) pp. 2473-2477, have determined the hydrogen content of plasma-deposited silicon nitride, using a nuclear reaction H+N.sup.15 --C.sup.12 +He.sup.4 +.gamma.-ray (4.43 MeV) in which the number of 4.43 MeV .gamma.-rays emitted is proportional to the concentration of H present. Over a ratio range Si/N=0.7-1.4, the hydrogen content varied between 1.6.times.10.sup.21 and 2.1.times.10.sup.21 (cm.sup.-3). This method of determining the amount of hydrogen present is expensive and does not, by itself, indicate the chemical forms in which the hydrogen is bound in the plasma-deposited material. As a result, this technique will not determine whether or not the hydrogen present will cause problems.
Beyer et al, in Jour. Appl. Phys., vol. 53 (1982) pp. 8745-8754, and in Materials Research Society Symposium, vol. 219 (1991) pp. 81-86, discuss hydrogen stability in hydrogenated amorphous semiconductor compounds, such as a-Si:H, a-Ge:H, a-Si--Ge:H, a-Si--N:H and a-Ge--N:H. The authors heat the individual hydrogenated compounds in a vacuum and use a quadrupole mass analyzer to identify hydrogen evolution and evolution rate at temperatures T=200.degree.-800.degree. C. Time rate of change of gas pressure is determined for particular species. One or more peaks of hydrogen evolution rate occur for amorphous silicon and nitride alloys. The technique is applied to study of diffusion characteristics of hydrogen for a-Si:H and silicon nitride but is not applied to study total hydrogen concentration and bonding.
Another technique sometimes applied, Fourier transfer infrared spectroscopy (FTIR), provides measurements on bonded hydrogen only. The Si--H and N--H absorption bands are well isolated, but calibration is critical and must usually be redone each time the spectroscopic instrument is used. The FTIR approach gives no information about the presence of interstitial hydrogen. The quantitative results are not always clear here, and FTIR provides no direct information on hydrogen evolution.
Sakka et al, in Appl. Phys. Lett., vol. 55 (1989) pp. 1068-1070, discuss hydrogen evolution from plasma-deposited, hydrogenated amorphous silicon films prepared from an SiH.sub.4 /H.sub.2 mixture, using apparatus similar to that of Beyer et al, supra. Sakka et al indicate that hydrogen evolution is determined in part by the deposition conditions for the SiH.sub.4 fraction rather than by diffusion characteristics. The Sakka et al technique is not used to determine hydrogen concentration.
It is desirable to determine the total amount of hydrogen present in a material that will be processed over a temperature range including high temperatures. It is also desirable to determine the hydrogen bonding strength and the chemical forms in which the hydrogen is bound on the IC. It is further desirable to estimate the temperature range or ranges at which large amounts of this hydrogen will be released during subsequent processing of the IC.


Colchicine derivatives represented by the formula (I)

Colchicine is a pseudo-alkaloid widely used for treatment of gout and is used only for short-term therapeutic treatment due to its toxicity. However, colchicine has been reported to exhibit a very fast and specific therapeutic effect on gout, as described in the Alkaloids, 1991, vol. 41, 125–176, U.S. Pat. No. 4,533,675, and so on.
During cell division, colchicine inhibits formation of mitotic spindle, thereby suppresses cell division, leading to activation of anticancer and anti-proliferous effects. Also, continuous research into colchicine applications has been carried out and a variety of colchicine derivatives have been synthesized up to now, as described in U.S. Pat. No. 3,222,253, U.S. patent application Ser. No. 00/608073A, WO 91/02084, and so on. Among them, only demecolcine has been used for treatment of leukemia.
There is also a report that colchicine can be used for treatment of psoriasis or rheumatoid arthritis and has an amyloidosis inhibitory effect and an anti-inflammatory effect (Arch. Dermatol. 1982, Vol. 118, Jul., pp 453–457). Also, thiocolchicoside, which is one of colchicine derivatives, is widely used for treatment of skeletal muscle contracture and inflammation.

Alkaloid derivative and a pharmaceutical composition containing the same

Abstract: with a halogen or nitric ester group, or pharmaceutically acceptable salts thereof, are described. Pharmaceutical compositions containing the same as effective components are also described. The colchicine derivatives were found to have anticancer, anti-proliferous and immunosuppressive function. Methods for preparing the colchicines derivatives are also provided.


A hose coupling fitting is furnished with a coupling head portion having a connecting hole, and a nipple portion having a nipple hole, and is fabricated through sequential cold forging steps carried out on a rod material. Specifically, a first pilot hole is formed along the center axis from a first end of the rod material, and a second pilot hole is formed along the center axis from the other end of the rod material. The second pilot hole is connected to the first pilot hole, and is formed with smaller diameter than the first pilot hole and larger diameter than the nipple hole. The surrounding area of the second pilot hole is then worked to form the nipple portion.

1. Field of the Invention
The present invention relates to a method of manufacturing a hose coupling fitting for connecting various kinds of hoses for fluids, such as automotive brake hoses.
2. Description of the Related Art
Conventional hose coupling fittings of this kind are furnished with a coupling head portion having a connection opening and a coupling body which has a nipple portion; a line on the brake cylinder side is connected to the connection opening, and a hose on the master cylinder side is inserted into and connected with the nipple portion to connect the master cylinder with the brake cylinder. In a hose coupling fitting of this design, the nipple portion is a thin elongated pipe which inserts into the path of the hose and which must be worked to high dimensional accuracy. For this reason the part is typically manufactured by a cutting operation, or by producing a separate component and unifying this with the coupling body by welding.
In this regard, with a view to manufacturing a hose coupling fitting of simpler design composed of single component without the need for a cutting process, methods which simply entail a series of cold forging steps have been considered; one such known technique is disclosed in JP 2002-361359 A. In this conventional technique, a large-diameter bore is formed in a thick, short rod-shaped material which then undergoes several cold forging steps to produce the connection opening and the nipple portion. However, in a conventional hose coupling fitting of ferrule shape having a socket portion and a nipple portion, appreciable deformation is necessary in order to transform the large-diameter through-bore into a narrow and elongated nipple hole, and it is difficult in practice for uniform shaping to take place between the upper end face and the lower end face of the nipple hole, thus creating the problem of appreciable deviation in the inside diameter dimension due to inside diameter taper or rippling, and making it difficult to achieve the desired shape.

Method of manufacturing hose coupling fitting


A substrate storage condition inspecting apparatus includes an illumination device, an imaging device, and a substrate storage condition determining unit. The illumination device includes, on the front side of an opening of a transport container located at an inspecting position, a first illumination portion and a second illumination portion that are spaced apart in the width direction of the opening. The substrate storage condition determining unit detects a pair of high-luminance portions on an inspection image captured by the imaging device, the pair of high-luminance portions being generated in locations circumferentially spaced apart in the peripheral edge portion of the semiconductor substrate by light applied by the first illumination portion and the second illumination portion, and determines whether or not the storage orientation of the semiconductor substrate is abnormal on the basis of the positional correspondence in the vertical direction for the pair of high-luminance portions.

JP 2005-64515A (Patent Document 1) discloses an example of a substrate storage condition inspecting apparatus as described above. According to the configuration of Patent Document 1, an imaging device captures an image of a semiconductor substrate stored in a transport container, the angle of inclination of the semiconductor substrate relative to the horizontal direction is calculated on the basis of the captured image, and it is determined whether or not an abnormal storage condition has occurred in which, for example, the semiconductor substrate is stored in a laterally inclined orientation.
The substrate storage condition inspecting apparatus of Patent Document 1 needs to perform, for all of a plurality of semiconductor substrates, a complex analysis that involves extracting, from the captured image of each semiconductor substrate, edges of a plurality of locations of the semiconductor substrate that are circumferentially aligned in the peripheral edge portion, determining a straight line connecting the plurality of edges for each semiconductor substrate, and determining the inclination of the semiconductor substrate from the angle of inclination of the straight line relative to the horizontal direction. This has complicated the configuration for determining whether or not a semiconductor substrate is in an abnormal storage condition inside the transport container.

Substrate storage condition inspecting apparatus and substrate storage facility having same