A method for forming an array of DRAM cells with buried trench capacitors is provided. The present method utilizes a photolithography and etching process to laterally remove away the parts of a collar oxide layer around the inner sidewalls of buried trench capacitors neighboring with each other in a pair of neighboring buried trench capacitors before a dielectric layer of the capacitor is formed. By way of replacing the removed parts of the collar oxide layer with a silicon nitride/silicon dioxide (NO) composite layer and using a strip type pattern along the pattern of the buried trench capacitors to define active areas for source/drain regions of access transistors over the buried trench capacitors, additional capacitance is occurred in the peripheral area of the neighboring buried trench capacitors which are not used by a conventional buried trench capacitor. As a result, the capacitance of the buried trench capacitor is increased without either increasing the depth of the buried trench capacitor or thinning down the effective insulator""s thickness of the buried trench capacitor.

1. Field of the Invention
The present invention relates to a dynamic random access memory (DRAM) process, and more particularly, to a process for manufacturing a dynamic random access memory device with buried trench capacitors.
2. Description of the Prior Art
Dynamic random access memory (DRAM) is a type of volatile memory having a signal which is stored in a digital state depending on the charging state of the capacitor in each memory cell. A DRAM memory unit comprises an access transistor and a storage capacitor. The source terminal of the access transistor is connected to the storage electrode, known as the upper electrode, of a storage capacitor. The lower electrode of the storage capacitor is connected to a fixed voltage source. Between the upper electrode and the lower electrode is a dielectric thin film.
A capacitor is at the xe2x80x9cheartxe2x80x9d of a DRAM storage device. When the amount of electric charges capable of being stored in the capacitor is large, soft errors produced by a particles can be greatly lowered. Furthermore, a large charge storage capacity in the DRAM capacitor is able to lower its refreshing frequency. When a small charge storage capacity is needed in a DRAM capacitor, a conventional two-dimensional or planar type of capacitor can be fabricated in the integrated circuit. However, a planar type capacitor occupies a rather large surface area on the semiconductor substrate surface, hence is not suitable for high integration. Therefore, three-dimensional capacitors, for example, the so-called stacked type or trench type capacitors, are used for increasing the level of integration of DRAMs.
FIGS. 1A through 1L are schematic cross-sectional views showing the progression of manufacturing steps in the fabrication of an array of trench-type DRAM cells according to a conventional method. As shown in FIG. 1A and FIG. 2A, wherein FIG. 2A is a top view for illustrating the following steps and FIG. 1A is a cross-sectional view along line Ixe2x80x94I of FIG. 2A, a pad oxide layer 101 and a silicon nitride layer 102 are sequentially formed on a P type silicon substrate 100. Then, a plurality of rows of trenches 103 are formed in the P type silicon substrate 100 by patterning the silicon nitride layer 102 and the pad oxide layer 101 with a conventional photolithography and etching method. As shown in FIG. 2A, the silicon nitride layer 102 and the pad oxide layer 101 are patterned in the way such that each pair of neighboring trenches 103 in each row of the trenches 103 is separated from each other for a predetermined distance.
Referring next to FIG. 1B, a conformal silicon nitride layer 104 is deposited on the P type silicon substrate 100, and then a sacrificial layer 105 is formed on the conformal silicon nitride layer 104. Referring to FIG. 1C, the sacrificial layer 105 is partially etched away such that the depth of the left sacrificial layer 105 is under the surface of the pad oxide layer 101, and a portion of the conformal silicon nitride layer 104 in the trench 103 is exposed. Then, referring to FIG. 1D, the portion of the conformal silicon nitride layer 104 uncovered by the left sacrificial layer 105 is etched away. Afterward, the left sacrificial layer 105 is removed.
Referring to FIG. 1E, a collar oxide layer 106 is then formed around inner sidewalls of each trench 103 uncovered by the left conformal silicon nitride layer 104 by thermal oxidation. Thereafter, the left conformal silicon nitride layer 104 is removed with hot H3PO4 aqueous solution. Subsequently, referring to FIG. 1F, an N type diffusion region 107 is formed around the surrounding of each trench 103 in the silicon substrate 100, using thermal diffusion with N type impurity gas to dope the silicon substrate 100. The N type diffusion region 107 is used as a bottom electrode of the buried trench capacitor. The regions of the silicon substrate 100 covered by the collar oxide layer 106 are not doped.
Referring next to FIG. 1G, a silicon nitride/silicon dioxide (NO) composite layer 108 is formed around the inner peripheral area of each trench 103 uncovered by the collar oxide layer 106 for serving as a dielectric layer of a buried trench capacitor which will be formed later. Referring to FIG. 1H, depositing an N type doped polysilicon layer 109 on the silicon substrate 100 to fill each trench 103 and serve as the top electrode of the buried trench capacitor. The N type doped polysilicon layer 109 is partially etched to expose a part of the collar oxide layer 106 in the trench 103. Referring to FIG. 11, etching the exposed part of the collar oxide layer 106 until the surface of the N type doped polysilicon layer 109.
Referring to FIG. 1J, subsequently, depositing an amorphous silicon layer on the silicon substrate 100, and partially etching the amorphous silicon layer so that the left amorphous silicon layer forms a buried silicon strap 110 in the trench 103. The buried silicon strap 110 is then doped with N type dopants by ion implantation. An annealing step is performed so that the impanted N type dopants in the buried silicon strap 110 are out diffused to the silicon substrate 100. The N type doped buried silicon strap 110 electrically couples the top electrode of the buried trench capacitor and a source/drain region of an access transistor on the silicon substrate 100, which will be formed later. In accordance with the above steps, the buried trench capacitors are completed.
Referring to FIGS. 1K and 2B, wherein FIG. 2B is a top view for illustrating the following steps and FIG. 1K is a cross-sectional view along line IIxe2x80x94II of FIG. 2B, defining active areas for source/drain regions of the access transistors of the DRAM cells using an island type pattern 111. As a result, a trench isolation region 112 is formed in the silicon substrate 100, passing through the respective buried silicon strap 110 and a part of the respective buried trench capacitor, and between the pair of neighboring buried trench capacitors.
Referring to FIGS. 1L and 2C, wherein FIG. 2C is a top view for illustrating the following steps and FIG. 1L is a cross-sectional view along line IIIxe2x80x94III of FIG. 2, an oxide layer is deposited on the silicon substrate 100 to fill the trench isolation region 112, and then planarized by a chemical mechanical polishing process. At the chemical mechanical polishing process, the silicon nitride layer 102 and the pad oxide layer 101 are removed. Thereafter, an N well is formed in the silicon substrate 100 by ion implantation. The N well electrically couples the bottom electrode of the buried trench capacitor formed of the N type diffusion region 107 to a positive voltage bias. A gate oxide layer 114 is formed on the silicon substrate 100 by thermal oxidation. Then, a gate layer 115 serving as word lines of the DRAM cells are formed by depositing and patterning an N type doped polysilicon layer and a tungsten silicide layer. Then, the source/drain regions 116 of the access transistors are formed by ion implantation. As a consequence, the trench type DRAM cells are completed.
However, in accordance with the conventional process of manufacturing the trench type DRAM cells, the trench capacitor becomes a major limited factor in device scaling. To keep capacitance unchanged, the trench of the trench capacitor must be etched deeper to compensate capacitor area loss from horizontal scaling. It becomes very difficult and costly to etch the trench as the aspect ratio of the trench increases larger. On the other hand, because the trench capacitor is formed before other devices, increasing unit capacitance by reducing the effective dielectric thickness of the trench capacitor seems to be very difficult due to limited high dielectric materials that can sustain high temperature are available.
Accordingly, it is a need to provide an improved process for manufacturing a trench type DRAM cell, which can increase capacitance of the trench capacitor without the drawbacks of the conventional process.
It is an objective of the present invention to provide a method for forming an array of DRAM cells with buried trench capacitors, which can increase capacitance of the buried trench capacitor without either deepening the depth of the buried trench capacitor or thinning down the effective insulator""s thickness of the buried trench capacitor.
It is another objective of the present invention to provide a method for forming an array of DRAM cells with buried trench capacitors, which utilizes a strip type pattern along the pattern of the buried trench capacitors, instead of the island pattern used in a conventional DRAM process, to define active areas for source/drain regions of access transistors over the buried trench capacitors on a semiconductor substrate, such that the process window of the strip type pattern can be greatly improved.
It is a further objective of the present invention to provide a method for forming an array of DRAM cells with buried trench capacitors, which utilizes a strip type pattern along the pattern of the buried trench capacitors, instead of the island pattern used in a conventional DRAM process, to define active areas for source/drain regions of access transistors over the buried trench capacitors on a semiconductor substrate, so that overall contact resistance of a buried conductive strap which electrically couples the top electrode of the buried trench capacitor and a source/drain region of the access transistor can be reduced and properly controlled.
In order to achieve the above objectives, the present invention provides a method for forming an array of DRAM cells with buried trench capacitors. The present method begins with providing a semiconductor substrate with a first conductivity. A first dielectric layer is formed on the semiconductor substrate. The first dielectric layer then is patterned to form a plurality of rows of buried trenches in the semiconductor substrate. Each row of the buried trenches comprises a plurality of pairs of neighboring buried trenches, and each pair of the neighboring buried trenches separates from each other for a predetermined distance. A conformal dielectric layer is formed on the buried trenches. Then, a sacrificial layer is formed on the conformal dielectric layer. A portion of the sacrificial layer is removed in order that the depth of the sacrificial layer is below the surface of the first dielectric layer. The portion of the conformal dielectric layer uncovered by the sacrificial layer is removed. Then, the left portion of the sacrificial layer is removed. A collar oxide layer is formed on inner sidewalls of the buried trenches uncovered by the left portions of the conformal dielectric layer. The left portions of the conformal dielectric layer then is removed. A diffusion region with a second conductivity opposite to the first conductivity is formed around the surrounding of each buried trench in the semiconductor substrate except for the portion of the semiconductor substrate covered by the collar oxide layer. The diffusion region is served as a first electrode of a buried trench capacitor. Following, removing the portions of the collar oxide layer around the inner sidewalls of the buried trenches neighboring with each other by a photolithography and etching process. Forming a second dielectric layer on the inner peripheral area of each buried trench uncovered by the collar oxide layer by steps of including oxidation such that an inversion layer is induced on the interface between the second dielectric layer and the semiconductor substrate. The second dielectric layer is served for an insulating layer of the buried trench capacitor. A conductive layer with the second conductivity is formed on the semiconductor substrate to fill each buried trench. The conductive layer is served as a second electrode of the buried trench capacitor. Removing the conductive layer until a portion of the collar oxide layer is exposed. Then, the exposed portion of the collar oxide layer is removed. A buried conductive strap with the second conductivity is formed on the first conductive layer within each buried trench. Defining a plurality of active area on the semiconductor substrate along the rows of the buried trenches using a strip type pattern. Then, an oxide layer is formed on the semiconductor substrate to fill the buried trenches. Planarizing the oxide layer to form a trench isolation region on each buried trench capacitor. A well with the second conductivity is formed in the semiconductor substrate to electrically couple with the diffusion regions. A gate oxide layer is formed on the semiconductor substrate. A conductive gate layer is formed on the gate oxide layer for serving as word lines of an array of DRAM cells. Source/drain regions with the second conductivity are formed in the semiconductor substrate. One source/drain region electrically couples to the buried conductive strap and the other source/drain region is served as a bit line of one DRAM cell. In accordance with the present method, a photolithography and etching process is used to laterally remove away the parts of the collar oxide layer around the inner sidewalls of buried trench capacitors neighboring with each other in a pair of neighboring buried trench capacitors before the dielectric layer of the capacitor is formed. By way of replacing the removed parts of the collar oxide layer with the dielectric layer of the capacitor, for example, a silicon nitride/silicon dioxide (NO) composite layer, and using a strip type pattern along the rows of the buried trench capacitors to define active areas for source/drain regions of access transistors over the buried trench capacitors, additional capacitance is occurred in the peripheral area of the neighboring buried trench capacitors which are not used by a conventional buried trench capacitor. As a result, the capacitance of the buried trench capacitor is increased without either increasing the depth of the buried trench capacitor or thinning down the effective insulator""s thickness of the buried trench capacitor.


The invention relates to a control device of a hybrid system. The control device selectively performs first and second modes for concomitantly using an EV mode for operating the electric motor (12) with the engine operation being stopped and an HV mode for selectively operating the engine and stopping the engine operation with the electric motor being operated by switching the EV and HV modes according to a predetermined switching condition set such that a proportion of an engine operation time in the first mode is smaller than that in the second mode. When an actual acceleration pedal manipulation amount is smaller than a first manipulation amount, an amount of the hybrid system power increased according to the increasing of the actual acceleration pedal manipulation amount in the first mode is made larger than that in the second mode.

In the Patent Document 1, a hybrid system is described, which hybrid system can output a power output from an internal combustion engine by its operation and a power output from an electric motor by its operation simultaneously or selectively.
In this hybrid system, a mode for selectively performing the operation of the engine and the electric motor and the stop of the operation (hereinafter, this mode may be referred to as—HV mode—) and a mode for performing the operation of the electric motor and the stop of the operation of the engine (hereinafter, this mode may be referred to as—EV mode—) are selectively performed.
In this hybrid system, a power depending on an actual acceleration pedal manipulation amount is output from the hybrid system.
In the hybrid system described in the Patent Document 1, a required hybrid system power value (i.e. a value of the power required as a power output from the hybrid system) is calculated on the basis of the actual acceleration pedal manipulation amount and when the thus calculated required hybrid system power value is smaller than a certain threshold value, the EV mode is selected and on the other hand, when the aforementioned calculated required power value is larger than the aforementioned threshold value, the HV mode is selected.
In this regard, in the hybrid system described in the Patent Document 1, in order to facilitate the selection of the EV mode at the EV mode selection being required (i.e. when it is required that the EV mode is selected), the power output from the hybrid system on the basis of the actual acceleration pedal manipulation amount at the EV mode selection being required is made smaller than that at the HV mode selection being required.


The invention relates to observing requests, deriving quality of service (QoS) demands and scheduling the network's resources in terms of QoS. A scheduler is modulating the QoS based on service usage and user-behavior just-in-time. It relates to a method for efficient use of network resources by just-in-time modulation of quality of service based on real-time service-usage and user-behavior comprising steps recording events, generating a synthesis of user-behavior for a QoS user profile according to QoS user preferences, predicting required QoS demand based on current user behavior and user QoS profile, according to QoS user preferences, deriving and propagating QoS demands and allocations, and co-ordination of QoS request of a manifold of users, based on requests, QoS user profiles, QoS user preferences and resources. Further it relates to computer software product, client terminals, a scheduler server, a network element, and a network.

1. Field of the Invention
The present invention relates to modulation of quality of service (QoS) in access networks. The invention is based on a priority application, EP 02360213.9, which is hereby incorporated by reference.
2. Background
Many sophisticated emerging applications, such as video streams, multimedia conferencing, or distributed virtual reality deploy in today's internetworking infrastructure. The main due requirement that all these applications share is the need for (guaranteed) quality of service (QoS) such as high bandwidth, delay, and jitter delay etc.
The ITU-T E.800 (08/94) recommendation introduces into the QoS concept on page 1 to 4 and defines there areas that affect the QoS. This recommendation describes factors that contribute collectively to the overall quality of service as perceived by the user of a telecommunication service. The user's degree of satisfaction of the quality of service can be divided into service performance areas like support, operability, servability, and security. It defines QoS as the collective effect of service performance which determines the degree of satisfaction of a user of the service.
Service providers that offer services with a guaranteed quality require management systems that can retrieve, calculate and present QoS data from the four performance areas. These management systems have to control the Service Level Agreements (SLA), between the consumers and the provider, and react on service quality violations according to business rules. Today there exist products to manage this, but no standards or de-facto standards exist to facilitate the integration of a QoS management system with other management systems such as mediation, billing and service activation as part of a total management solution.
The QoS requirements are typically specified in terms of bounds, e.g., the worst case end-to-end delay or the maximum bandwidth. Other parameters may be specified as well.
On the other hand the networks have limited resources with respect to quality of service. The resources are shared between consumers.
Today the resources are allocated mainly statically by consumers, e.g. according to a business model. There are colored services (gold, silver, bronze) available, where per connection at connection set-up a static type of QoS is chosen. From telephony an optimization is known, minimizing cost by choosing a subscription-type (provider), e.g., by a call-by-call prefix or user-preferences, at subscription time. Another example is the subscription-type (billing) to user-preferences in mobile communication. There is no cost reduction and no change of QoS at this moment, only billing is adapted while QoS remains.
This QoS management is of rather static type, configured administratively at subscription time. Changing the QoS and price of the subscription is an administrative task. The granularity of this approach is limited to the connection-setup, rather than the requirements of applications that use them.
This prior art has some major disadvantages. It does not take into account the cost for operator. Effectively no change of QoS, only billing is adapted while QoS remains the same. The approaches with respect to change are limited . Typically a user can change subscription mode 2 or 3 times. And the granularity is limited to a connection, instead of services or finer granularity. The QoS adaptation is triggered by user, based on match between preferences and behavior of the service. The user has to make the matching judgement himself.
Especially today's broadband access networks lack dynamic subscription types. There are static subscription types dealing with the connection as a whole. Typically, at subscription-time, the user chooses a type gold versus bronze and this type is not changed thereafter. If the user wants to use demanding services, he or she will have to change his or her entire connectivity subscription impacting all services and all family members.
FIG. 1 to FIG. 5 explain the current problems and the proposed solution. For a gold service, the end-user will pay a lot of money to have, e.g. a high bandwidth available at all times, satisfying most of his needs. Although the operator will have significant revenues, he will have to provision a lot of unused bandwidth.
For a bronze service, the end-user will have a cheap subscription that will limit the networking performance. An upgrade from bronze to gold will be expensive and will be a time-consuming administrative task.
Therefore it is necessary to provide a method for quality of service, e.g. bandwidth, allocation in an highly adaptive way.
Such a method for allocation of bandwidth in a predictive fashion is known from the international patent application WO 99/44335. There packets are identified with particular data streams and characteristics of the data streams are used to predict probable future bandwidth requirements. Such predictions are used to allocate high-bandwidth channels and to close or switch channels as in accordance with predicted needs. Preferably the system is self-learning and can modify a rules base for making allocation decisions e.g. based on actual use statistics.
European Patent EP 1 202 528 describes a development in the direction from a user's perspective instead of the technical view in terms of bandwidth, namely a browser-based monitoring system and method. A browser operable with a user's Internet-compliant device is provided for launching a transaction session, wherein a media-based parametric detector is associated with the browser in order to track a plurality of media-based parameters and metrics generated during the transaction session. The media-based parameters and metrics are effectuated at least in part due to the user's interaction with the browser with respect to the transaction session. A reporting structure is provided in association with the browser for reporting the media-based parameters and metrics to an Internet entity for effectuating an IP-based service.
European Patent Application EP 1 158 740 relates to a framework for achieving cross-adaptability by providing components for QoS management in the communication network(s) by means of a component coordinator unit and targets the uniformity problem.
European Patent Application EP 1 021 015 discloses a network-device control system for controlling a network device by acquiring user priority or application priority and, controlling in accordance with the priority.
The article, A CORBA-BASED QUALITY OF SERVICE MANAGEMENT FRAMEWORK FOR DISTRIBUTED MULTIMEDIA SERVICES AND APPLICATIONS' IEEE NETWORK, IEEE INC. NEW YORK, US, vol. 13, no. 2, March 1999 (1 999-03), pages 70-79, XP000875023 ISSN:0890-8044 addressed issues of QoS management services in distributed multimedia services and applications. The article provides an end-to-end QoS management called the QoS management framework. A key component of this framework is the QoS Management Service Object, which orchestrates resources at endpoints, coordinating resource management across layer boundaries. Services such as translation, monitoring, admission, and negotiation are provided by the QoS Management Service Object allowing dynamic negotiation and renegoation of QoS by users.
A further method and apparatus for a variable bandwith experience for an end-user is described in the international patent application WO 01/50278.
It is a problem to provide network resources uniformly in terms of the above mentioned QoS efficiently in order to satisfy the real demand of customers, i.e. from a user's perspective instead of the technical view in terms of bandwidth, as good as possible. In order to solve this situation one has to schedule the network resources, i.e. the QoS, with respect to the requests and expectations of the users.

Method, computer software products, client terminal, network element and network for efficient use of network resources by just-in-time modulation of quality of service based on service usage and user behavior


Electrically conductive studs are employed to interconnect bulk active devices and SOI devices in a semiconductor device. Also provided is a method for fabricating such devices.

MOSFET scaling on bulk silicon has been the primary focus of the semiconductor and microelectronic industry for achieving CMOS chip performance and density objectives. The shrinking of MOSFET dimensions for high density, low power and enhanced performance requires reduced power-supply voltages. Because power consumption, P, is a function of capacitance, C, power supply voltage, V, and transition frequency, f, where P=CV.sup.2 f, the focus has been on reducing both C and V as the transition frequency increases. As a result, dielectric thickness and channel length are scaled with power-supply voltage. Power-supply reduction continues to be the trend for future low-voltage CMOS. However, with power supply reduction, transistor performance is severely impacted by both junction capacitance and the MOSFET body effect at lower voltages. As technologies scale below 0.25 .mu.m channel lengths, to 0.15- and 0.1 .mu.m. short-channel effects (SCE) control, gate resistance, channel profiling and other barriers become an issue for advanced CMOS technologies. While significant success has been achieved with successive scaling of bulk CMOS technology, the manufacturing control issues and power consumption will become more difficult to deal with.
Using silicon-on-insulator (SOI) substrates, many of the concerns and obstacles of bulk-silicon CMOS can be eliminated at lower power supply voltages. CMOS-on-SOI has significant advantages over bulk CMOS technology and will achieve the scaling objectives of low power and high performance for future technologies. CMOS-on-SOI provides low power consumption, low leakage current, low capacitance diode structures, good sub-threshold I-V characteristics (better than 60 mV/decade), a low soft error rate from both alpha particles and cosmic rays, good SRAM access times, and other technology benefits. SOI technology allows for the mapping of standard advanced technologies into an SOI technology without significant modifications. SOI process techniques include epitaxial lateral overgrowth (ELO), lateral solid-phase epitaxy (LSPE) and full isolation by porous oxidized silicon (FIPOS). SOI networks can be constructed using the semiconductor process of techniques of separation by implanted oxygen (SIMOX) and wafer-bonding and etch-back (SIBOND) because they achieve low defect density, thin film control, good minority carrier lifetimes and good channel mobility characteristics. Structural features are defined by shallow-trench isolation (STI). Shallow-trench isolation eliminates planarity concerns and multidimensional oxidation effects, such as LOCOS bird's beak, thereby allowing technology migration and scaling to sub-0.25 .mu.m technologies.
There are multiple concerns in SOI technology. Thermal dissipation of the electrical-current generated self heating is a concern. In this case, the ability to establish a low-thermal resistance contact to the bulk (e.g., thermal contacts) can reduce this concern.
In thin-film SOI technology, there are no vertical diodes, vertical transistors, vertical pnpn or other bulk type elements normally used for analog applications. Analog circuit and device elements that can be placed in the bulk silicon can be used to reduce chip area and achieve bulk-silicon like circuit operation.
Another barrier is electrostatic discharge protection (ESD). One problem with SOI is that there are no diodes natural to the process that are not in the presence of a polysilicon gate edge. In thin-film SOI technology, there are no vertical diodes, vertical transistors, vertical pnpn or other bulk type elements normally used for electrostatic discharge protection. ESD circuit and device elements that can be placed in the bulk silicon can be used to reduce chip area and achieve bulk-silicon like circuit operation. To achieve ESD robustness in a mainstream SOI technology suitable for high volume commercial usage, ESD protection structures and circuitry must have low resistance and capacitance as well as a small percentage of semiconductor chip area. The disadvantage of SOI ESD networks is 1) high thermal impedance to the bulk substrate, 2) thin films, 3) polysilicon gate structures, and 4) the lack of vertical silicon diodes. The high-thermal impedance creates high surface temperatures in the SOI film leading to thermal secondary breakdown in SOI devices. The thin film SOI devices leads to high current densities creating significant power/density constraints. The polysilicon gate structures create high capacitance and are prone to electrical overload and dielectric breakdown. The lack of vertical structures prevents electrical current to be dissipated to the bulk and forces construction of wide perimeter lateral structures. As a result, a disadvantage for SOI is that negative pulse ESD protection is as difficult as the positive pulse ESD protection. In bulk silicon, using comparatively smaller structures, ESD protection for negative mode pulses is easily achieved because of current dissipation to the bulk substrate; in SOI this is not true. This forces designers to allocate as much area for negative mode as the positive mode protection schemes.
In the prior art, there are different alternatives suggested to date to achieve ESD protection. Standard circuits are constructed in SOI and used for ESD protection. K. Verhaege et al. ("Analysis of Snapback in SOI NMOSFETs and its Use for an SOI ESD Protection Circuit," Proceedings of the IEEE SOI Conference, pp. 140-141, 1992), and ("Double Snapback in SOI NMOSFETs and its Application for SOI ESD Protection." IEEE Electron Device Lett., Vol. 14, No. 7, July 1993, pp. 326-328) demonstrates that usage of a SOI MOSFET transistor as an ESD protection device. Lu (U.S. Pat. No. 4,989,057, ESD Protection for SOI Circuits) demonstrates the usage of transistors in the SOI film for ESD protection. Voldman et al. ("CMOS-on-SOI ESD Protection Networks," EOS/ESD Proceedings, September 1996) demonstrates that thin film SOI ESD devices can be constructed by configuring MOSFETs in diode modes of operation. The First problem is that SOI-based ESD circuits are worse than bulk devices by at least a factor of 2.times.. M. Chan et al. ("Comparison of ESD Protection Capability of SOI and Bulk CMOS Output Buffers," IRPS 1994) have demonstrated that SOI circuits are 2.times. less ESD robust. This then will require very large ESD networks which will be unacceptable in size or capacitance loading. A second problem is that the structures are all MOSFET based. All of the above structures introduce a polysilicon gate structure. The concern with the polysilicon gate structure is dielectric overload and high capacitance per unit width. Both of these solutions are unacceptable from a reliability and functional perspective.
In the implementations, the structures utilize only bulk elements adjacent to the active core SOI circuitry. Kawai, U.S. Pat. No. 4,889,829, demonstrates a method of building bulk transistors in the substrate and SOI transistors in the insulating film. In this methodology, it is required that the bulk transistor be constructed adjacent to the active area structures in the same plane. This requires additional chip area devotee to the bulk transistors as well as Topography concerns. Kawai introduces significant topography. which would make it unacceptable for high density and planarity integration issues.
Sun, U.S. Pat. No. 5,399,507, proposed a mixed thin film where ESD devices are constructed in the bulk and where the oxygen implant is masked and core SOI devices are built over the insulating layer. In the concept, the ESD MOSFET structures are placed adjacent to the active integrated circuits in the same physical silicon plane. This concept eliminates planarity concerns but leads to silicon dislocation, which are unacceptable from a manufacturing perspective. To avoid the silicon dislocations, the active core SOI structures must be spatially separated to avoid yield concerns. This introduces an area disadvantage. Whereas the proposed solutions solve the concern of building ESD networks in the thin SOI film, they do not resolve semiconductor manufacturing problems, yield issues and topography.
In the above, no ESD solution has been proposed that uses ESD structures under active circuitry to eliminate the problem of semiconductor chip area. In Kawai and Sun, the use of SOI MOSFETs and diode structures for ESD devices is avoided by constructing bulk MOSFET devices. In Verheage and Lu, bulk devices are avoided. Hence in the prior art, there is no obvious incentive to use both bulk and SOI transistors for ESD protection. Also, three-dimensional structures have not been suggested or proposed as ESD solutions. This is because it is not possible to build bulk MOSFETs under SOI MOSFETs. Using a dual-gate MOSFET, Ohmi, U.S. Pat. No. 4,907,053, addresses the problem of back gate biasing in a SOI MOSFET transistor. Ohmi suggests the possibility of constructing a SOI MOSFET with a top gate and a bottom gate where the bottom gate is placed in the bulk and the top gate is above the SOI film. The implementation suggested by Ohmi interconnection is not addressed in the structure.
Structural elements that need to be interconnected are the MOSFET top gate, bottom gate, body, and source/drain diffusions and bulk structural elements.
SOI structures can contain a top gate and bottom gate structure. In SIBOND implementations, a buried bottom gate can exist within the buried oxide layer. In a SIMOX implementation, a diffused second gate can be present and formed in the silicon substrate. Interconnect structures arc needed to establish electrical connections between the silicon surface, the body, bottom gate, and bulk device elements. Interconnect elements between the different elements can be advantageous for single gale CMOS-on-SOI, dual gate CMOS-on-SOI, dynamic threshold MOSFETs (DTMOS). In dynamic threshold MOSFETs, the body of the MOSFET is used to dynamically vary the threshold voltage of the MOSFET transistor.
An issue of SOI is the "body contact." A concern is the additional areas needed for establishing an electrical connection between the body and an electrical potential. In bulk CMOS, the substrate acts as the natural plane for the "MOSFET body." In SOI, new three dimensional structures are advantageous for establishing connections between the body and power supply connections, bulk devices or bulk contacts.
An advantage in dual-gate CMOS-on-SOI, interconnects to connect either a buried gate or a diffused bulk gate can be advantageous to avoid additional silicon area.
In dynamic threshold MOSFETs, interconnects to connect either a buried gate or a diffused bulk gate to the MOSFET body can be advantageous to reduce additional silicon area.
For three dimensional circuits, that consist of either bulk elements, or both bulk, and SOI elements, interconnections between these elements are needed to reduce additional silicon area.
For bulk ESD networks, that consist of either bulk elements, or both bulk and SOI elements, interconnections between these elements are needed to reduce additional silicon area

Electrical contact to buried SOI structures

International Business Machines Corporation


An image diagnosis assistance apparatus calculates a first characteristic value based on an image feature of an image that is a diagnosis target, acquires a second characteristic value based on the findings information of the image input by a user via an operation unit, and performs diagnostic inference for a predetermined region of the image based on the first characteristic value, the second characteristic value, and the reliability of inference of the first characteristic value and the second characteristic value.

1. Field of the Invention
The present invention relates to an image diagnosis assistance apparatus, a processing method thereof, and a storage medium.
2. Description of the Related Art
One known data processing technology using a computer is inference technology, where an unknown event is inferred based on knowledge extracted from a known event. Even in the medical field, studies have recently been carried out to assist the diagnosis of a morbid portion using an inference apparatus. For example, research is being conducted to develop a technique of inputting the characteristic values (image features or image findings) of a medical image and inferring whether an abnormal shade on the medical image is benign or malignant.
Japanese Patent Laid-Open No. 2008-541889 discloses a system that analyzes a medical image, extracts image features, calculates initial diagnosis based on them, and offers the user the initial diagnosis. In this system, when the user changes the image features, the diagnosis result is dynamically recalculated. The thus calculated image features and diagnosis result are generated as a diagnosis report after the user has confirmed and properly modified.
Japanese Patent Laid-Open No. 2006-163465 discloses a technique of calculating and outputting the predicted value of a target variable value (for example, diagnosis) of input unknown medical data and the reliability measure of the prediction itself based on known medical data accumulated in a database.
In the above-described technique of Japanese Patent Laid-Open No. 2008-541889, the system performs image feature calculation and diagnoses before the user and presents the result to the user. For this reason, it is impossible to cause the user to input image features and a diagnosis result first and then cause the system to present, to the user, image features and diagnosis results calculated later. In the technique of Japanese Patent Laid-Open No. 2008-541889, if the user changes an image feature, the image feature calculated by the system is not used for the image feature. For this reason, even if the system can calculate a more reliable image feature than the user, it is not used, and more reliable diagnostic inference cannot be performed.
Japanese Patent Laid-Open No. 2006-163465 allows calculation of the predicted value of diagnosis and the reliability measure of the prediction itself. However, even if the reliability is revealed to be poor, more reliable diagnostic inference cannot be performed.

Image diagnosis assistance apparatus, processing method thereof, and storage medium


While a user holds a camera positioned relative to an object, a first image of the object and a second image of the object, as captured by the camera, may be obtained. Intensity variations between a first intensity map of the first image and a combination intensity map obtained from the first intensity map and a second intensity map of the second image may be compared. Then, a shadow may be identified within the first image, based on the intensity variations.

The image quality of a digital image is typically reduced when unwanted shadows are captured. Further, subsequent uses of the digital image may be unavailable or compromised. For example, text captured in the digital image may be obscured. Then, desired image processing may include errors, e.g., if the processing incorrectly interprets a shadow as an actual image element of the digital image.
With frequent use of mobile device cameras to capture digital images, inclusion of unwanted shadows is particularly frequent and problematic. For example, users often position their mobile devices above a document to capture an image of the document. In these and similar contexts, the positioning of the mobile device often causes a shadow across the document being captured.
Shadow detection, however, is often difficult, problematic, and prone to error. For example, existing techniques may identify false positives, such as by incorrectly identifying an image element as a shadow. Existing techniques are also prone to detect false negatives, in which actual shadows are not identified as such.
Additionally, existing techniques may be burdensome to a user. For example, the techniques may require an undesirably long processing time to complete, or may require excessive input from the user.

Image shadow detection using multiple images


A sports training apparatus having a substantially resilient elongated arm support coupled to straps adapted to surround an athlete's shoulders to hold the arm support securely against the athlete's chest and under the athlete's arms to facilitate the proper training position for a variety of sports activities. Methods of using the training apparatus are also disclosed.

This invention relates generally to methods and apparatus for sports training, and more particularly to methods and devices that prevent a user's arms from moving too close to the body during certain athletic activities.
Many poor habits in sports develop during training when athletes engage in excess arm movements, and specifically when they allow their elbows to come too close to their bodies. An athlete's range of motion is greatly decreased as his or her arms move closer to the body. Such restriction interferes with proper passing, digging and blocking form for volleyball, proper shot mechanics for basketball, and proper fielding in baseball and softball. Moreover, catching fundamentals in many sports are enhanced if the athlete is able to keep his or her elbows an appropriate distance away from the body while performing these actions. If the athlete instead performs these actions in the frontal plane with elbows away from the body, this form will give the athlete more range and a faster response time to react to various situations in the game.
A number of sports training devices have been reported that address arm positioning. For instance, Cook, U.S. Pat. No. 6,283,877 (the "Cook Patent") discloses a device that uses a restricting line, designated as an "assembly line" connected to a wristband and a waist band on the athlete to limit forward movement of a basketball shooter's non-shooting hand. The stated purpose of the device is to teach the athlete to shoot a basketball with one hand. The restricting line works to help keep the athlete's non-shooting elbow close to the body, forcing the athlete to finish the shot with the other "shooting" hand. (Cook Patent, Col. 1, Lines 26–27.) However the device does not help train the athlete for those basketball techniques that require a greater range of motion, which is enhanced if the athlete keeps the arms away from the body. For instance, in a jump shot, the shot release is quicker and more efficient if the athlete keeps his or her elbows away from the body, thus decreasing the chances of having the shot blocked. The device of the Cook Patent is not suitable for developing this type of form, because is designed to develop proper form for movements that require the elbow to be kept close to the body.
Sheppard, U.S. Pat. No. 6,645,093 (the "Shepard Patent") describes a device to control the movement of a basketball shooter's shooting arm in a predetermined direction with predetermined elbow placement. The device includes an rigid arm bar strapped to the shooting arm and pivotally connected to a back plate strapped to the athlete's back. A stated purpose of the device is to assure that "the athlete's arm cannot move inwardly or outwardly from the desired plane." (Shepard Patent, Col. 6, Lines 41–46.) The athlete's arm is restricted to movement in an arc from his or her side in a "vertical plane" extending outwardly and forwardly from the front of the athlete's arm. However, the device is not intended to help athletes achieve the proper from for such basketball techniques described above where the technique is enhanced by the athlete's ability to maintain his elbow away from his torso. Moreover, the device essentially "locks" the athlete's arm into a motion in the arc of a single plane, thereby limiting the usefulness of the device in general training exercises where the athlete may need to perform activities where the arm restriction proves detrimental. For instance, an athlete wearing such a device during training would find it particularly difficult to catch a basketball prior to performing the required shot.
Caveness, U.S. Pat. No. 3,820,783 (the "Caveness Patent") discloses a device having a belt-supported arm that extends upwardly and forwardly from the athlete's abdomen with a transverse gauge bar at its upper end to indicate the height at which a basketball shooter's elbow should be before extending the arm to shoot a basket. While the device serves as a gauge for proper elbow height for shooting, it does not prevent the elbow from moving too close to the torso. Moreover, the device is bulky, with rigid components, some at face height, which precludes its use in general training where unexpected contact with the device could cause injury.
Selberg, U.S. Publication No. 2003/0190984 (the "Selberg Application") discloses a volleyball training device that includes a restricting lines or "cords" connected by straps to an athlete's thighs and elbows limiting the distance that the elbows can move away from the thighs and from one another. The stated purpose of the device is to retain the elbows within a predetermined distance apart so that they are locked and close to one another. However the device does not help train the athlete for those volleyball techniques that require a greater range of motion, which is enhanced if the athlete keeps the arms away from the body. For instance, certain passing, digging and blocking shots are enhanced if the athlete keeps his or her elbows away from the body. Moreover, since the device essentially ties the athlete's arms to his legs, maintaining him in a squat position, the device is not suitable for general training requiring a wide variety of movements.
Szabo, U.S. Pat. No. 4,795,163 (the "Szabo Patent") describes a volleyball training device that includes a rigid rod attached to an athlete's bicep and having a ball at the distal end of the rod, which the athlete grabs. The device essentially locks the athlete's arm into place. The stated purpose of the device is to teach proper form for the forearm bump pass, and particularly to prevent the elbows from bending. Since the device does not attach to the shoulders, it does not control lateral or forward arm movement and thus does not assist in the development of techniques that require such arm placement. Moreover, since the device rigidly locks the athlete's arms, it is not suitable for general training where a volleyball player would need more arm flexibility, for instance to protect himself if a ball approaches his face.
While the above disclosed devices help develop specific athletic techniques, none address the common problem of correcting the athlete's tendency to allow her arms and elbows to move too close to her torso rather than positioning them away from and in front of her body in the frontal plane. Such positioning is necessary for faster performance of many athletic techniques as described above. Moreover, the devices are specific to the sports of either volleyball or basketball and do not address form problems in other sports. For instance, softball and baseball fielders also achieve a greater range of motion by maintaining their elbows away from their body in the frontal plane. A receiver in football is taught to catch the ball by reaching for the ball and not letting it come into his chest to create more efficient moves and decrease the time that a defender has to defend the pass. Also, the devices described must be used in very controlled training environments, because they lock body parts and some have rigid members that can cause injury to the user or other in the game.
A need exists for a lightweight athletic training device that helps an athlete keep his or her arms away from the body while not restricting other bodily movements that can be used in general training settings without a risk of injury to the athlete or others she may come into contact with. Existing devices are inadequate for this purpose.

Sports training apparatus and method of use


A medical holding apparatus includes: a support including a plurality of arms, and a plurality of joints configured to connect the plurality of arms, the support being configured to support an imaging unit at a distal end thereof; a load applying mechanism arranged in at least one of the joints and configured to apply a resistance load against operation of the at least one of the joints to the support; and a processor comprising hardware, the processor being configured to: set torque to be applied by the load applying mechanism based on an operating state of the imaging unit; and apply a load corresponding to the set torque to the load applying mechanism when a rotation inhibit state of each of the arms of the support is released.

The present disclosure relates to a medical holding apparatus and a medical observation system.
In a medical field, a medical observation apparatus including an imaging unit that captures an image of an observation object in an enlarged manner, and a support unit that includes a plurality of arm parts and a plurality of joint parts for connecting the plurality of arm parts and supports the imaging unit at a distal end thereof has been known (for example, see JP 2017-158969 A). In the medical observation apparatus described in JP 2017-158969 A, the imaging unit is moved three-dimensionally by using operation of each of the joint parts, and located at a desired position. Then, the image captured by the imaging unit is displayed on an external display apparatus.
Meanwhile, in the medical observation apparatus that moves the imaging unit three-dimensionally by using operation of each of the joint parts, there is a problem in that an imaging field of view is reduced with an increase in a magnification that is used for observation, and a target region in the observation object disappears (an image is missed) from a screen of the display apparatus only by applying a weak force to the imaging unit (only by slightly moving the imaging unit). To cope with the problem as described above, in the medical observation apparatus described in JP 2017-158969 A, a certain load is applied to each of the joint parts to control movement of each of the joint parts, to thereby prevent missing of an image.

Medical holding apparatus and medical observation system


Embodiments of a method for detecting potential areas of inductive coupling in a high density integrated circuit design are described. The inductance mitigation process first converts the inductive analysis into a density problem. The density of wires within a region that may switch within a portion of the system clock are compared to the density of wires will not switch within that same time. Regions of the chip that have a high ratio of density of switching wires versus non-switching wires are determined to have the potential of an inductive coupling problem. Additional grounded metal is added into the problematic regions of the chip to improve the switching versus non-switching wire density.

When two or more signal wires run in parallel they have the potential to interfere with each other through either capacitive or inductive coupling effects. In general, capacitance is a short distance effect that impacts only immediately neighboring wires, and several different tools automated circuit design tools have been developed to detect and measure the impact of capacitive coupling in a circuit. Unlike capacitance, induction is a relatively long distance effect, and is therefore harder to detect and analyze. Inductive coupling occurs when a change in current flow through one component or wire induces a current flow in another component or wire through a shared magnetic field. Its impact is not necessarily limited to immediately neighboring wires, and in fact can reach far across a particular chip or system.
In the design and layout of VLSI (Very Large Scale Integration) devices, which have many wires, inductive coupling is especially difficult to analyze and correct. As circuit designs become denser, the number of parallel wires (traces) increases, while the spacing between the wires decreases. Inductive coupling can become a particular problem when these dense, wide busses switch at or near the same time. Powerful enough inductive coupling can cause glitches in digital circuits when inadvertent state changes in a wire are caused by the induction induced by one or more other wires changing state.
Current methods of detecting and correcting inductive coupling effects typically rely on traditional method of inductor extraction and analysis through circuit simulation tools, such as SPICE (Simulation Program with Integrated Circuit Emphasis). This limits the technology to analysis of a small subset of the total number of signals on the VLSI device. An alternate approach using reluctors has also been developed, however, such approaches are also limited in capacity and typically lack full chip coverage. Such methods also require knowledge of an effected area, and are thus ineffective at detecting unknown problem areas in a design. In general, present methods of detecting and analyzing inductive coupling effects are limited to circuit densities on the order of thousands of wires. Such methods are totally inadequate for circuit densities on the order of millions or tens of millions of wires.

Inductance mitigation through switching density analysis


An utterance in any of various languages is processed to derive a predicted label using a generated grammar. The grammar is suitable for deriving meaning of utterances from several languages (polyglot). The utterance is processed by an encoder using word embeddings. The encoder and a decoder process the utterance using the polyglot grammar to obtain a machine-readable result. The machine-readable result is well-formed based on accounting for re-entrances of intermediate variable references. A machine then takes action on the machine-readable result. Ambiguity is reduced by the decoder by the well-formed machine-readable result. Sparseness of the generated polyglot grammar is reduced by using a two-pass approach including placeholders which are ultimately replaced by edge labels.

A problem exists at the human interface with machines. The machine may not obtain the intended meaning of a person, when the machine is asked to do something or given a command.
Making this problem more difficult to practically address, is that people communicate in more than one language. Examples of languages are English, Italian, German and Dutch.
Some workers in the field of communication with machines have studied the grammar of a particular human language. A formalism representing rules applied to the language to come up with a particular sentence or meaning may be programmed into the machine. That is, the machine can interpret requests or commands expressed in the formalism (not English, Italian, etc.). These formalisms may refer to a graph, one graph for each meaning. In some instances, a particular kind of graph is referred to as a tree.
A problem with grammars in general is that two distinct sequences of rules may produce the same utterance. In reverse then, an utterance may be correctly interpreted as indicating two different graphs. For such a grammar, even with correct analysis, the machine may be faced with one utterance and two meanings. This problem is called ambiguity.

Machine action based on language-independent graph rewriting of an utterance


The present invention provides an endoscopic accessory control system that resides externally of the endoscope. The system comprises the endoscopic accessory with a working end to be placed at the distal end of the endoscope, a control sheath extending proximally external to the endoscope and a control handle joined to the proximal end of the control sheath. The control handle is slidably mounted to the exterior surface of the endoscope shaft and is configured to permit grasping of both the shaft and the handle. With the control handle and endoscope shaft grasped with one hand, the other hand of the user is left free to manipulate the endoscope distal tip controls. Additionally, the external arrangement of the control sheath leaves the working channel of the endoscope free for use of accessories or operations.

Endoscopes are elongate instruments navigable through natural body lumens and cavities of a patient for the purpose of remotely evaluating and treating a variety of ailments. Endoscopes have viewing capability provided by fiber optic elements that transmit images along their length to the medical care provider. Endoscopes may specifically configured in length, diameter, flexibility and lumen configuration to navigate specific treatment areas in the body. Examples of specifically configured endoscopes are a laparoscope, duodenoscope, colonoscope, sigmoidoscope, bronchoscope and urethroscope among others. In combination with remote viewing capability, endoscopes are frequently configured to provide a working channel through which shaft mounted tools and medical instruments may be navigated and remotely operated. Additionally, the endoscope shaft itself may carry a medical instrument for remotely performing a procedure at an internal treatment site, while permitting direct visualization of the site through the endoscope.
Presently, instruments and accessories used with endoscopes employ shafts that extend from the distal working end of the instrument, proximally outside of the patient to provide a mechanism by which the physician can manipulate the device. When used with an endoscope, the instrument shafts are routinely passed through the working channel of an endoscope so that the device extends distally to the distal face of the endoscope while the proximal end extends out through a port in the control handle of the endoscope to provide means for the physician to manipulate the instrument. In the case of certain endoscopic accessories, the distal end of the device attaches directly to the outside surface of the distal end of the endoscope. However, even with accessories that attach to the distal end of the endoscope, control elements such as cables or wires must pass through the working channel of the endoscope.
The arrangement of instruments and accessories passing through the working channel of the endoscope presents several problems to the user operating the combination. First, setting up the device can be cumbersome and time-consuming for the physician. In the use of accessories that attach to the distal end of the endoscope, the physician or technician preparing for the procedure must first back load control elements for the accessory into the working channel of the endoscope. This procedure entails threading the control cables or wires for the accessory into the working channel at the distal end of the endoscope and advancing the wires through until they project from a port at the control handle of the endoscope. After inserting the control elements through the working channel, the accessory may then be secured to the distal end of the endoscope. As a final step in the assembly, an accessory control module that will be manipulated by the physician during the procedure must be connected to the proximal end of the control element and then secured in some fashion to the endoscope control handle. The means for connecting such a control module to the endoscope control handle may be awkward and may not be secure because the accessory may not be designed for the particular endoscope control handle set-up.
After the lengthy set-up procedure described above, another problem faced by the physician during the procedure is controlling both the endoscope and the accessory at the same time. Typically, in an endoscopic procedure performed without an additional accessory, a physician will hold the endoscope control handle in the left-hand while advancing and controlling longitudinal movement of the shaft with the right hand, grasping the shaft along its midportion. When an accessory is added, the proximal control module presents the problem of operating a third element that must be manipulated by the physician's hand during the procedure. Obviously, with only two hands available, a physician must have the assistance of another person to control the endoscope accessory combination during the procedure. Alternatively, the physician will have to release control of one control element in order to manipulate the third element during various portions of the procedure. However, while the endoscope shaft or either the endoscope or accessory controls are released, that element will be subject to small undesired movements that may result in movement of the device away from the intended internal treatment site. It would be desirable to provide a system that permits two-handed control of both the endoscope and the accessory or instrument being used in conjunction with it.
Another disadvantage of current endoscopic accessories and instruments is that their control shafts must pass through a working lumen of the endoscope that could otherwise be used for other purposes during the medical procedure. In order to provide a reasonably small diameter, endoscopes can afford to provide only limited additional space for working channels to accept accessories or provide a lumen for other operations. Accordingly, when the control elements for a single accessory take up the space provided by the working channel, the use of other instruments or procedures through the channel are necessarily hindered or eliminated. With control elements for the accessory extending through the working channel, a second device, such as an injection needle for drug therapy will not be able to pass through the working channel and may, therefore, have to be navigated to the site with a second, subsequent intubation with the endoscope, which increases procedure time and danger to the patient. Additionally, functions such as aspiration are hindered by the presence of control elements in the working channel of the endoscope. With the diameter of the working channel being used predominantly by the indwelling control elements, vacuum through the channel is reduced and the aspirating function impaired. The reduced effectiveness of aspiration can be problematic in applications where blood and tissue may cover the distal end of the endoscope inhibiting viewing capability. Insufficient aspiration may not adequately clear the area of the distal end of the endoscope of tissue debris. Also, debris and blood that is sucked into the channel may interfere with the smooth operation of the accessory control elements. Additionally, procedures that require aspiration to collect areas of tissue into a chamber, such as band ligation or suturing may be negatively impacted by reduced aspiration capacity. Accordingly, it would be desirable to provide an endoscopic accessory control system that does not dominate the use of the endoscope's working channel.

This patent is subject to a terminal disclaimer.

External endoscopic accessory control system


A thermoelectric material which exhibits a high thermoelectric performance even at high temperatures is shown and described. A thermoelectric material is provided with a plurality of conductive layers made of a first semiconductor only and a plurality of barrier layers made of a second semiconductor only, which are alternatingly arranged, a diffusion-preventive layer being interposed between neighboring conductive layers and barrier layers. Diffusion between the conductive layers and the barrier layers under high-temperature conditions is prevented, and the thermoelectric material maintains high performance standards at high temperatures.

Currently available thermoelectric materials include a type in which conductive layers and barrier layers are layered adjacent to each other and are directly joined to each other (see, for example, U.S. Pat. No. 5,436,467).
In the thermoelectric material, the energy gap in the barrier layer is maintained to be much wider than the energy gap in the conductive layer to create a large difference between the two energy gaps, whereby quantum wells are formed in the conductive layers. As a result, the electric conductivity of the thermoelectric material is heightened, and an improved thermoelectric performance is exhibited.
However, when such a currently available thermoelectric material is subjected to a high temperature condition, the energy gap is broadened in the conductive layer and is narrowed in the barrier layer due to diffusion, mainly, mutual diffusion between the conductive layer and the barrier layer. Accordingly, the difference between the two energy gaps becomes small, making it impossible to form a quantum well in the conductive layer. As such, conventional thermoelectric materials have a low heat resistance and are incapable of maintaining adequate thermoelectric performance under a high temperature condition.
A need therefore exists for an improved thermoelectric material that maintains good performance at high temperatures. The present invention fulfills this need by preventing the occurrence of diffusion between the conductive layer and the barrier layer, and provides further related advantages.

Thermoelectric material with diffusion-preventive layer


A LWD tool is disclosed for providing an image of the borehole during drilling or during removal of the tool from the borehole. The tool includes imaging transducers which are fired based upon either time or direction. Borehole reflections are processed to determine time-of-flight to give an indication of standoff with respect to each transducer from which the borehole geometry can be obtained. The reflections also are analyzed for other information, such as the amplitude of the reflected signal. The time-of-flight and amplitude values are encoded and stored in memory for retrieval later. In addition to the imaging transducers, the imaging assembly also includes depth transducers to obtain a micro measurement of depth downhole. The micro-depth measurements are stored and/or transmitted to the surface. In addition, a directional sensor and clock are provided downhole to correlate the firing of the transducers and the receipt of reflections. The micro-depth measurements and directional measurements preferably are used with one more image signals to check for the presence of bed boundaries intersecting the borehole. If a boundary is present, the imaging assembly applies a best fit sine wave to the image signal, from which dip angle .alpha. and dip direction are obtained. In the preferred embodiment, acoustic transducers are used as the imaging transducers, although electromagnetic transducers or other suitable transducers may be used.

The present invention relates generally to a system for compiling an image of a wellbore wall with a bottomhole drilling assembly. More particularly, the invention relates to a bottomhole drilling assembly that includes a logging while drilling ("LWD") sub-system for determining characteristics of the borehole and formation during the drilling of a well, and correlating that information with depth to produce an image of some desired portion of the borehole. Still more particularly, the present invention relates to a device that provides an image of the borehole as part of an LWD tool, and which also can be used as a device to determine other formation parameters such as formation dip angle.
Modern petroleum drilling and production operations demand a great quantity of information relating to parameters and conditions downhole. Such information typically includes characteristics of the earth formations traversed by the wellbore, in addition to data relating to the size and configuration of the borehole itself. The collection of information relating to conditions downhole, which commonly is referred to as "logging," can be performed by several methods. Logging has been known in the industry for many years as a technique for providing information regarding the particular earth formation being drilled. In conventional oil well wireline logging, a probe or "sonde" is lowered into the borehole after some or all of the well has been drilled, and is used to determine certain characteristics of the formations traversed by the borehole. The sonde may include one or more sensors to measure parameters downhole and typically is constructed as a hermetically sealed steel cylinder for housing the sensors, which hangs at the end of a long cable or "wireline." The cable or wireline provides mechanical support to the sonde and also provides an electrical connection between the sensors and associated instrumentation within the sonde, and electrical equipment located at the surface of the well. Normally, the cable supplies operating power to the sonde and is used as an electrical conductor to transmit information signals from the sonde to the surface, and control signals from the surface to the sonde. In accordance with conventional techniques, various parameters of the earth's formations are measured and correlated with the position of the sonde in the borehole, as the sonde is pulled uphole.
The sensors used in a wireline sonde may include a source device for transmitting energy into the formation, and one or more receivers for detecting the energy reflected from the formation. Various sensors have been used to determine particular characteristics of the formation, including nuclear sensors, acoustic sensors, and electrical sensors. See generally J. Labo, A Practical Introduction to Borehole Geophysics (Society of Exploration Geophysicists 1986); D. R. Skinner, Introduction to Petroleum Production, Volume 1, at 54-63 (Gulf Publishing Co. 1981).
For an underground formation to contain petroleum, and for the formation to permit the petroleum to flow through it, the rock comprising the formation must have certain well known physical characteristics. One characteristic is that the rock in the formation have space to store petroleum. If the rock in a formation has openings, voids, and spaces in which oil and gas may be stored, it is characterized as "porous." Thus, by determining if the rock is porous, one skilled in the art can determine whether or not the formation has the requisite physical properties to store and yield petroleum. See D. R. Skinner, Introduction to Petroleum Production, id. at 8.
Acoustic sensors are commonly used to measure porosity of the formation by determining the amount of time it takes the acoustic wave to travel through the formation. The porosity of the formation through which the acoustic wave travels influences the speed of sound in that formation. By determining the speed of sound of a formation, valuable insight can be obtained regarding formation porosity and other formation characteristics. Examples of acoustic wireline tools are U.S. Pat. Nos. 3,237,153, 3,312,934, 3,593,255, 4,649,525, 4,718,046, 4,869,349, and 5,069,308. Typically, the acoustic wireline tools include one or more acoustic transmitters and one or more acoustic receivers. Acoustic waves are generated by the transmitter(s) and are transmitted into the formation adjacent the wellbore. The acoustic signals are refracted back to the receivers, and a travel time for the wave is determined, typically at the surface of the well. From this travel time, and knowing the spacing between the receivers, speed of sound of the formation can be calculated, which then can be used to provide an indication of formation porosity according to known techniques. See generally J. Labo, A Practical Introduction to Borehole Geophysics, Chapter 10 (Society of Exploration Geophysicists 1986).
Acoustic logging tools also have been used by the assignee of the present invention as a wireline imaging device. See Open Hole Services, (Halliburton Logging Services 1992), p. 28. This device is commonly referred to as the Circumferential Acoustic Scanning Tool (or CAST). As the sonde is pulled up the borehole, an acoustic transducer is rotated at a high speed (on the order of 10 revolutions per second). During each rotation, the acoustic transducer is fired based upon its relative rotational bearing. Thus, the radial directions are divided into a plurality of finite points (on the order of 200 points), and the transducer is fired at each point. Reflections are received by the transducer, and the amplitude and time-of-flight of the reflected signal is computed and transmitted via the wireline to the surface for processing. If the transducer is fired 200 times per revolution, and the transducer is rotated 10 times per second, then the transducer is fired 2000 times per second, and receives 2000 reflected signals in one second. The reflected signals from the wireline imaging device are used to produce rotational image logs, as well as borehole caliper measurements and/or standoff measurements using two-way time-of-flight of a pulse-echo signal (with an assumed mud slowness).
While wireline logging is useful in assimilating information relating to formations downhole, it nonetheless has certain disadvantages. For example, before the wireline logging tool can be run in the wellbore, the drillstring and bottomhole assembly must first be removed or tripped from the borehole, resulting in considerable cost and loss of drilling time for the driller (who typically is paying daily fees for the rental of drilling equipment). In addition, because wireline tools are unable to collect data during the actual drilling operation, drillers must at times make decisions (such as the direction to drill, etc.) possibly without sufficient information, or else incur the cost of tripping the drillstring to run a logging tool to gather more information relating to conditions downhole. In addition, because wireline logging occurs a relatively long period after the wellbore is drilled, the accuracy of the wireline measurement can be questionable. As one skilled in the art will understand, the wellbore conditions tend to degrade as drilling fluids invade the formation in the vicinity of the wellbore. In addition, the borehole shape may begin to degrade, reducing the accuracy of the measurements.
Because of these limitations associated with wireline logging, there recently has been an increasing emphasis on the collection of data during the drilling process itself. By collecting and processing data during the drilling process, without the necessity of tripping the drilling assembly to insert a wireline logging tool, the driller can make accurate modifications or corrections "real-time", as necessary, to optimize drilling performance. For example, the driller may change the weight-on-bit to cause the bottomhole assembly to tend to drill in a particular direction, or, if a steerable bottomhole assembly is used, may operate in the sliding mode to effect source corrections. Moreover, the measurement of formation parameters during drilling, and hopefully before invasion of the formation, increases the usefulness of the measured data. Further, making formation and borehole measurements during drilling can save the additional rig time which otherwise would be required to run a wireline logging tool.
Designs for measuring conditions downhole and the movement and location of the drilling assembly, contemporaneously with the drilling of the well, have come to be known as "measurement-while-drilling" techniques, or "MWD." Similar techniques, concentrating more on the measurement of formation parameters of the type associated with wireline tools, commonly have been referred to as "logging while drilling" techniques, or "LWD." While distinctions between MWD and LWD may exist, the terms MWD and LWD often are used interchangeably. For the purposes of this disclosure, the term LWD will be used with the understanding that the term encompasses both the collection of formation parameters and the collection of information relating to the position of the drilling assembly while the bottomhole assembly is in the well.
The measurement of formation properties during drilling of the well by LWD systems improves the timeliness of measurement data and, consequently, increases the efficiency of drilling operations. Typically, LWD measurements are used to provide information regarding the particular formation in which the borehole is traversing. During the last several years, many in the industry have noted the desirability of an LWD system that could be especially used to detect bed boundaries and to provide real-time data to the driller to enable the driller to make directional corrections to stay in the pay zone. See, e.g. Olsen, "Potential of MWD Tools," Euroil, March 1993, pp. 17-18. Alternatively, the LWD system could be used as part of a "Smart" system to automatically maintain the drill bit in the pay zone. See, e.g. commonly assigned U.S. Pat. No. 5,332,048, the teachings of which are incorporated by reference herein. The assignee has also developed a system which permits the measurement of LWD data at the drill bit to provide an earlier indication of bed boundaries and formation characteristics. See U.S. Pat. No. 5,160,925. The use of an LWD system with these other systems makes it possible to conduct at least certain portions of drilling automatically.
Currently, logging sensors that commonly are used as part of an LWD system are resistivity and gamma ray sensors. Some in the industry have begun offering imaging systems based upon resistivity measurements. See the IDEAL system brochures published by Schlumberger. Acoustic measurement devices currently are being experimented with and implemented by the assignee and other companies for use in LWD systems to calculate a correction factor for other LWD measurements, and to determine formation speed of sound. See, e.g. commonly assigned U.S. patent application Ser. No. 08/430,822, now allowed entitled "Standoff Compensation for Acoustic Logging While Drilling Systems." The primary goal of acoustic measurements in LWD systems is to develop additional data relating to formation porosity by determining the formation speed of sound, which corresponds to measurements obtained by wireline logging. See "Sonic While Drilling--Real-Time Data to Guide Real-Time Decisions," Schlumberger Oilfield Services catalogue. The implementation of acoustic logging tools in a LWD system, however, is complicated as compared to a wireline tool because of the presence of extraneous drilling noise downhole. Thus, the noise generated by the drilling assembly, the flow of mud through the drillstring, the grinding of the drilling components, and other mechanical and environment noises present downhole make it difficult for the acoustic transducers to receive the transmitted acoustic wave and to isolate the received acoustic waveform from the extraneous noise that also is detected by the acoustic receiver. As a result, to date, acoustic sensors have had a very limited application in LWD systems.
Until very recently, imaging devices only have been available in wireline logging tools. Imaging devices have not been used extensively downhole for a myriad of reasons. One problem with implementing an LWD imaging tool is that the images must be stored downhole, and cannot be transmitted to the surface as quickly as is done in wireline logging because of the manner in which data is transmitted in LWD systems. The images require a massive amount of memory storage space. A second problem with LWD imaging relates to depth measurements. In wireline logging, depth can be tracked with better resolution than is available in the drilling process because more precise depth measurements are available for use with wireline devices than with LWD systems. Because of the problem with depth measurements during drilling, there is a great concern that LWD images will be smeared, or must be time correlated instead of depth correlated. A third concern with LWD imaging relates to the limitations on processing downhole, which results in an under-utilization of the imaged data until it can be retrieved at the surface.
While the advantages of determining borehole images during drilling are immediately apparent to one skilled in the art, to date no one has successfully implemented such a system which overcomes the limitations listed above.

Logging while drilling borehole imaging and dipmeter device


A method of evaluating the quality of an image includes a step of determining at least a parameter concerning a zone or a parameter concerning a distribution pattern of sampling points within the zone. This step is performed based on the image. For each zone, Fourier analysis is performed using the optical characteristic values of the respective sampling points within the zone, and the image quality of each zone is obtained. The quality of the image is then determined based on the image quality of each zone within the image. A suitable zone and distribution pattern of sampling points are employed in evaluating the quality of an image.

1. Field of the Invention
The present invention relates to a method of evaluating the quality of an image, a device for assisting in evaluating the quality of an image, an image forming device, and a computer program product for implementing the method of evaluating the quality of an image.
2. Description of the Related Art
Printed images and images loaded into a computer or the like via a scanner or from a digital camera contain defects that are called noises. The image noise (hereinafter referred to as a noise) is a cyclical variation in an optical characteristic (hue, brightness, saturation, or the like) occurring irrespective of an original image. In images, various noises occur depending on the performance of a printer that prints the images, that of the scanner via which the images are loaded, or that of the digital camera from which the images are loaded. For example, a noise that is short in the cycle of a variation in the optical characteristic (hereinafter referred to as a high-frequency noise) or a noise that is long in the cycle of a variation therein (hereinafter referred to as a low-frequency noise) may occur. Moreover, noises may occur linearly or circularly. In any case, an image containing many noises is recognized as an image of poor quality when it is viewed by human beings.
A known method is such that the foregoing noises are detected by performing Fourier analysis on an image to evaluate the quality of the image. According to the method of evaluating the quality of an image, zones having a predetermined shape are delineated in an image, and sampling points are disposed within the delineated zone. Thereafter, the positions of the sampling points are identified and optical characteristic values thereof are detected. The optical characteristic to be detected may be any of various optical characteristics, that is, a hue, brightness, and saturation. After the optical characteristic values of the respective sampling points are detected, Fourier analysis is performed on data items each representing the identified position and optical characteristic value of each sampling point to detect noises in respective zones. After noises are detected, the image quality of respective zones is assessed based on the noises. Consequently, the quality of the image is evaluated based on the image qualities of respective zones. When the quality of an image is evaluated as mentioned above, noises can be detected and the quality of the image can be evaluated.
According to the conventional method of evaluating the quality of an image, a parameter concerning a zone to be delineated in an image, that is, a shape or a size is predetermined but will not be changed. Moreover, a parameter concerning a distribution pattern of sampling points, that is, positions of sampling points, a distance between adjoining sampling points, and the number of sampling points are also predetermined but will not be changed. Zones are delineated in the same manner for any image and sampling points are disposed within each zone in the same manner for any image to evaluate the quality of the image.

Method of evaluating quality of image and use thereof


A plasma display panel capable of increasing a luminous efficiency while decreasing discharge firing voltage while easily generating an address discharge by generating a sustain discharge as facing discharge. The discharge sustain electrodes are on barrier ribs between the two substrates. One of the sustain discharge electrodes extends between discharge cells and the other extends through discharge cells dividing discharge cells into two portions. Each discharge sustain electrode is surrounded by a dielectric material and also a non-transparent MgO protective layer. These electrodes are formed to be tall and narrow to allow for superior facing discharge potential.

1. Field of the Invention
The present invention relates to a plasma display panel (PDP), and more particularly, to a PDP having an electrode structure resulting in a high-density and a high-luminance display.
2. Description of the Related Art
A plasma display panel (PDP) is a display apparatus using plasma discharge. Vacuum ultraviolet (VUV) light emitted by the plasma discharge excites phosphor layers, and in turn, the phosphor layers emit visible light that is used to display images. Recently, the PDP can be implemented as a thin wide screen apparatus having a screen size of 60 inches or more and a thickness of 10 cm or less. In addition, since it is a spontaneous light emitting apparatus such as CRT, the PDP has excellent color reproducibility. In addition, the PDP has no image distortion associated with its viewing angle. Moreover, the PDP can be manufactured by a simpler method than an LCD can, so that the PDP can be produced with a low production cost and a high productivity. Therefore, the PDP is expected to be a next-generation display apparatus for industry and home TVs.
A three electrode type PDP has become very popular recently. However, such a PDP is limited by the fact that it has a limited luminance efficiency and a large voltage is needed to initiate or fire the discharge. Therefore, what is needed is a design for a PDP that results in improved luminance efficiency where a lower voltage is needed to start discharge.

Design for a plasma display panel that provides improved luminance-efficiency and allows for a lower voltage to initiate discharge


A lock mechanism is provided which may actuate both a deadbolt and flush bolts in response to a single lock movement. The mechanism includes a dual element bolt throw and flush bolt actuator, which locks in place in the extended position if the end of the bolt is pressed inwardly. The throw includes a transfer mechanism which translates the horizontal movement of the bolt to vertical movement at the flush bolts. The flush bolts also include a mechanism to limit retraction thereof if the extending end of the flush bolt is exposed to inward directed force. The entire lock mechanism may be actuated by a standard cylindrical lockset having actuating jaws extending therefrom. The lock mechanism case may include an aperture therein, through which the handle housing extends, which aligns the jaws in the handle housing with the rear end of the bolt.

The present invention is directed to an improvement in locks and locking mechanisms. A flush bolt system for cylindrical lock sets is supplied by the present invention which includes anti-jimmying or anti-forcing features, and an ability to automatically lock several bolts simultaneously.
Doors are used to secure openings through exterior and interior walls, fences or other enclosures. Typically, the door is semi-permanently attached to the wall in a manner which permits the door to be moved with respect to the opening to permit passage there through, and then permit easy and fast repositioning of the door to reclose the opening. This may be accomplished by the use of hinges on one of the stiles of the door, or the door may be located on rollers, or may hang on rollers or be otherwise movable. In each instance, the hinges, or rollers, allow the door to be moved with respect to the opening, while maintaining the door in alignment to reseal the opening.
To secure the opening against undesirable or unwanted entry, the door is provided with a lock. This lock is intended to secure the door to close the opening until the lock is actuated to an unlocked status to allow the door to be moved to an open position. Such locks come in a multitude of forms, and include outside sliding latches, sliding flush mounted bolts, handled latch sets, and keyed locksets. Commonly, many such systems can be utilized in openings having multiple swinging doors to obtain proper securing of the door in the opening.
Double, or french, doors present additional problems for the door designer from the aspect of securing, or locking, the door in position. These doors are hingedly connected to a frame and meet in the middle of the frame opening. Each is commonly configured to move independently of the other, and they must be sized, and hung in the opening, with clearance therebetween for free movement in the frame but also with insufficient clearance to permit easy jimmying or prying of the doors apart. Further, to securely interlock the doors into the frame a mere bolt therebetween is insufficient. A bolt secured in one door, and extending a short distance into the other door, will not prevent motion of the doors about their hinges. To accomplish this task, an upper, and/or lower, vertical or "flush" bolt is provided which is actuatable out of the top and/or bottom of at least one of the doors and into adjacent frame members. These bolts prevent motion of the door relative to the frame when in the extended or actuated position.
The actuation of flush bolts into the door frame and floor, and accompanying actuation of the deadbolt, presents several problems to the door lock supplier. Most doors are less than three inches in width, and many modern doors are less than two inches wide. For aesthetic purposes, most lock specifiers and secondary market users require that all of the door hardware, except the handles and keyways, fit inside of, or on, the door in such a way as to minimize the exposed parts thereof. Additionally, by keeping exposed parts to a minimum, the ability of thieves or burglars to break the lock and gain entry through the door is minimized. Thus, mainly in industrial, commercial or institutional applications will exterior lock components be acceptable, and then only on the interior side of the door. Therefore, in many instances, the door lock manufacturer must supply a lock and actuation members which physically fit inside the door, leaving only handles and plates exposed. Such an installation commonly includes a lock case containing the lock actuation members, which fits into a pocket extending inward the side of the door, or a lockset, each having a pair of knobs extending from the faces of the door.
In addition to the size limitations on door hardware imposed by the size of the door, designers are faced with increasing government regulation which affects the flexibility of hardware selection common in the past. For example, in most public facilities doors must be wheelchair accessible. In that instance, when french doors are used, they must be operable by a person sitting in a wheelchair. Likewise, to increase security, doors may include mortise locks to further secure them in their frame, in the form of surface or flush mounted locks which are vertically located at the top and bottom of the door. This forecloses the use of manual flush bolts or surface bolts on the door which are disposed adjacent the top of the door, as they are out of reach of the wheel chair bound. Therefore, there exists a need for a retrofitable door lock for use in french doors, which will allow, with the turn of a single handle, the opening of both the top and bottom flush bolts.
In addition to the problems encountered with the design of accessible double door locks, the designer must include anti-theft devices to minimize the ability of thieves or others to bypass the lock and gain entry through the door.
Many doors are fitted with a rotary handle lock, commonly having retracting jaws therein which engage the rear of a bolt. These locks are installed by drilling a hole through the door adjacent the lock stile thereof, and then drilling a cross hole into the lock stile which enters the first hole. The handle lock, with the jaws, is fitted in the first hole with the jaws disposed in alignment with the cross hole, and the bolt is received through the cross hole and engaged with the jaws. Turning of the handle causes the jaws to retract into the handle lock, thus retracting the bolt into the door. As the bolt is biased to a position extending from the door, the bolt head is chamfered so that as the door closes, the chamfered portion engages a strike plate on the doorjamb, and further closing movement of the door causes the bolt to retract inward the door. Where locking is required, the inner knob will typically include a lock tab and the outer knob will include a keyed access. The outer knob is locked against movement by actuating the lock tab in the inner knob to the locked position, thereby preventing turning of the keyed handle. In this position, entry may not be gained by turning the handle to retract the bolt. However, the rotary drive commonly does not include any means of preventing retraction of the jaws which initially actuate the bolt in response to handle movement, and such devices are therefore easily forced. Thus, even where the handle is locked against rotary motion, the bolt may be forced inward the door by exerting inward pressure on the extended portion of the bolt. If further security is required a secondary, keyed, deadbolt can be installed by drilling a second set of holes in the door.
Another lock configuration is the mortise lock. These locks are disposed in a case, and the door must be mortised to receive the case. A hole drilled through the face of the door receives handles received into a mortise case. Mortise locks can include a secondary deadbolt lock therein. External knobs control movement of the latch extending outward through the door butte stile from the case.
An additional problem with lock sets which incorporate retractable non-locking jaws occurs as a result of the relatively tight alignment tolerances of the jaws and the latch bolt. Typically, a retractable, non-locking jaws type of handle set includes an inner and an outer handle, one of which may be keyed, and a cylindrical housing in which the retractable non-locking jaws are located. The latch bolt is typically housed within a cylindrical housing, and it includes an extending portion which is engaged by the jaws. When a handle is turned, the jaws housing must remain stationary, and the jaws are retracted inwardly of the jaws housing to retract the latch bolt inwardly of the end of the door.
To provide the alignment of the latch bolt and the jaws, a latch bolt bore is drilled into the end of the door, and a handle bore is drilled through the faces, i.e., through the main panel portion, of the door. If the axes of these bores intersect and are perpendicular, the jaws and the latch bolt will be in perfect alignment, and the latch bolt will move freely in response to motion of the jaws. This occurs because the jaws move linearly back and forth within the jaws housing, and they therefore provide a vector which is collinear with the axis of movement of the latch bolt to move the latch bolt in the housing. However, if the bores are substantially out of alignment, either as a result of an offset between the two axes and/or a non-perpendicular relationship between the two axes, the jaws will engage the engagement portion of the latch bolt, but the force vector provided by the jaws will not be collinear with the linear axis of motion of the latch bolt. As a result, the jaws will impose a side load on the latch bolt, which, in turn, may cause the latch bolt to bind.