Validation of printer cartridges using a unique identifier from an RFID tag, a serial number or identifier from a cartridge, and a seed to generate a reproducible key are described. The key is written to non-volatile memory of the RFID tag. The parameters for generation of the key are retrieved when the cartridge is asked to print in a printer, and a second key is generated, and the keys are compared. If the keys match, the cartridge is validated and printing continues.

Print cartridges for printers are typically single use commodities. Each cartridge contains a supply of ink, for example in an ink jet type printer. Once the ink supply is exhausted, the cartridge is discarded or recycled, and a new cartridge is loaded into the printer. Many cartridges are not designed to be refilled, or to be replaced with non-printer specific cartridges. Print cartridges contain a memory among other components. The memory may contain parameters corresponding to various physical characteristics of the cartridge, including by way of example only and not by way of limitation ink type, ink color, ink quantity, date codes for manufacture of cartridge and ink, cartridge serial number or identifier, and the like.
Radio frequency identification (RFID) operates on well known principles. The requirements for a simple RFID system include an antenna or coil, a transceiver, and a transponder. The transceiver generates signals which are emitted by the antenna as radio signals. In some RFID systems, the transceiver and antenna are combined with a decoder and called an interrogator. The radio signals excite or activate an RFID tag containing the passive transponder. The tag transponder emits a signal in response to the received radio signals. This response is received and interpreted by the transceiver/decoder. RFID tags can contain a relatively large amount of data stored in on-tag non-volatile memory. Many passive RFID tags are programmed only once with data, and are not re-programmable. Some RFID tags carry a non-volatile memory that can be programmed, such as a flash memory, an electrically erasable programmable read-only memory (EEPROM), or the like. Active RFID tags have an internal power source, and are typically read/write capable.
In many areas, validation of print cartridges is important. For example, in a printer in which a certain type of cartridge or quality of cartridge is required, or in which an authentic cartridge specifically designed for the printer is required, the large number of cartridges available that all have the same basic configuration could result in an incorrect, improper, or non-authentic cartridge being used in a printer, potentially damaging not only the cartridge, but the printer and perhaps any media on which the printer is used. Simple validation techniques such as detecting a correct size or ink configuration of an ink cartridge are already performed on some printers using the information stored in the memory of the print cartridge. However, since such information is relatively standard and known, compromising the simple validation techniques currently used is not a complex process.
For the reasons stated above, and for other reasons stated below which will become apparent to those skilled in the art upon reading and understanding the present specification, there is a need in the art for a validation system more resistant to compromise.

Cartridge validation with radio frequency identification


Microlaser based dye doped polymeric resonators are provided as well as pharmaceutical formulations containing the microlaser based dye doped polymeric resonators, methods of making thereof, and methods of use thereof for monitoring and/or stimulating electrical activity in a brain of a subject in need thereof. The microlaser based dye doped polymeric resonators can include a particle having a spherical core containing one or more fluorescent dyes dispersed within a polymer matrix, wherein the polymer matrix has an index of refraction of about 1.2 or greater; an outer surface surrounding the spherical core; and a gold nanoparticle, wherein the gold nanoparticle is on the outer surface, is dispersed within the spherical core, or both. The fluorescent dyes can include a voltage sensitive fluorescent dye.

Different pathologies such as Alzheimer's, Parkinson's, Wilson's diseases, and chronic traumatic encephalopathy due to blasts and impacts affect the brain functions altering the neuronal electrical activity. An important aspect of the brain study is the use of non-invasive, non-surgical methodologies that are suitable to the well-being of the patients. Brain activities are characterized by chemical and electrical processes, which happen at a fast rate within the skull. Only a portion of the electromagnetic field can be detected by applying sensors outside the scalp; in addition, surgery is often involved if sensors are applied in the subcutaneous region of the skull. For these reasons, sensors that can go behind the scalp without surgical procedures are needed to fully comprehend the phenomena involved into different pathologies affecting the brain.
Currently, the brain activity is monitored, for example, by using machines such as the electroencephalograph (EEG), where electrodes applied to the scalp measure the electric field generated by the activity of the brain. This method exhibits a poor spatial resolution, can cause discomfort to the patient and presents a low level of signal-noise (A. K. Maddirala, et al., IEEE Sensors Journal, vol. 16, 23, 2016). Other techniques such as functional magnetic resonance imaging (fMRI), and magnetoencephalography (MEG), are very expensive and they do not allow the patient to move during the scanning process (Z. Liu, et al., IEEE engineering in medicine and biology magazine, Vol. 25, 4, 2006).
Optical techniques applied to biomedical research and diagnostics have been spread during the last decades. Techniques such as optical coherent tomography (OCT), exhibit high resolution (˜15 μm) and a depth of ˜2 mm (J. Welzel, Non Invasive Diagnostic Techniques in Clinical Dermatology, Springer, Berlin, Heidelberg, 2014), and is used for biomedical diagnostic of skin layers, mucous membranes and blood vessels. The OTC is used specially to detect and diagnose some types of cancers (T. Freddy, et al., Cancer Research, Vol. 69, 22, 2009). Near infrared light (NIR) of spectral range goes from 800 nm to 1300 nm, it is a harmless radiation for the living tissue, and can penetrate the living matter in depth as, it turns out that most of the living matter is transparent to the NIR light. For example, functional near infrared (fNIR) spectroscopy has been employed to monitor cerebral hemodynamics in the prefrontal cortex in patients exposed to different stimuli. However, the change of the blood flow associated with the neuronal activity is slow, which in turn makes this method not suitable to detect neuronal activity where high temporal resolution is often needed.
Also, voltage sensitive dyes have been used to detect electrical activities from neuronal cells, both in vitro and in vivo (D. Shoham, et al., Neuron, Vol. 24, 4, 1999.). The emission spectra of these dyes change with a variation of electrical potential. However, the quantity of dye required to have a detectable signal from the emitted fluorophores is not safe if used for a living biological entity; in addition, the development of complex algorithms is required to mitigate the background noise and reach a clear signal.
There remains a need for improved methods that can be employed to detect the brain activity (i.e. neuronal electric signals) efficiently and with high level-noise ratio. There remains a need for methods and techniques that measures electric signals directly from within the neurons with high spatial and temporal resolutions, and high level to noise ratio. Furthermore, there remains a need for improved tools and methods for direct measurement and/or stimulation of neuronal electric activity without surgical operations that overcome the aforementioned deficiencies.

Microlasers based dye doped polymeric resonators for brain activity stimulation and monitoring


In one embodiment, a computer accessible medium comprises instructions which, when executed, check a first storage from which a computer system is configured to boot for a block identified in a read request. The block is included within an image of a set of software resources to be provisioned on the computer system. If the block is stored in the first storage, the instructions supply the block from the first storage in response to the read request. Otherwise, the instructions: fetch the block from an image repository system that stores the image; store the block in the first storage; and supply the block in response to the read request. In another embodiment, the instructions store a block identified in a write request to the first storage. The instructions record that the block is modified in the first storage with respect to the image stored in an image repository system.

1. Field of the Invention
This invention is related to the field of provisioning computer systems to execute a set of software resources.
2. Description of the Related Art
Software provisioning of computer systems is becoming more pervasive as businesses attempt to more fully utilize the computer power they have at their disposal. As the workload being performed by a set of computer systems changes, it may be desirable to shift workload of various types from one computer system to another, to increase or decrease the number of computer systems handling a given type of workload, etc. Different workloads may require different software resources (e.g. operating systems, applications, etc.), and thus the configuration of the computer systems may need to be changed. Providing a computer system with a set of software resources is referred to as provisioning the computer system.
Software provisioning generally involves copying an image of the software resources from an image repository system to the target computer system, typically across a network of some sort. Provisioning a computer system frequently takes a relatively long period of time (e.g. 20 minutes or more, depending on the size of the image, the speed of the network, etc.). The amount of time required to provision a computer system may impact how efficiently computer systems can be redeployed to handle other workloads. For example, the OpForce™ product currently available from VERITAS Software Corporation (Mountain View, Calif.) may do the following to provision a computer system (OpForce executes on the image repository system): The target computer system sends out a Pre Execution Environment (PXE) boot request (during boot of the target computer system). OpForce receives the PXE boot request, and transmits a lightweight Linux operating system (the "Active OS") to the target computer system. The target computer system boots into the Active OS, which mounts the image repository system containing the image to be provisioned (e.g. a network file system (NFS) or common internet file system (CIFS) mount). The Active OS executes a make filesystem command on the target computer system, and copies all files from the image on the image repository system to the local disk in the target computer system The Active OS "personalizes" the local files (hostname, IP address, etc). The Active OS then reboots the target computer system. The target computer system again sends out a PXE boot request, which OpForce ignores. The target computer system times out on the PXE boot request and boots from the local disk.
In some cases, provisioning may be accomplished by having multiple bootable images in a storage area network (SAN) or Network Attached Storage (NAS), and directing a target computer system to boot from the desired image. Small Computer Systems Interface over Internet Protocol (iSCSI) disks could be used in a similar fashion. While some high-end server systems may be capable of such booting, many computer systems (e.g. personal computer (PC) systems based on Intel or AMD processors) typically are not designed to boot in this fashion. If a large amount of local storage is included in a target computer system, multiple bootable images may be stored in the local storage, and the desired image may be selected for booting (e.g. so called "multiple bootable partitions").
Another function which may take a relatively long period of time is snapshotting a system image from a computer system into the image repository. For example, the current OpForce product may perform the following to snapshot an image into the image repository system: OpForce communicates with an OpForce agent running on the target computer system, requesting a reboot of the target computer system. The target sends out a PXE boot request during the reboot. OpForce detects the PXE boot request, and pushes the Active OS to the target computer system in response. The target computer system boots the Active OS, which mounts the image repository system. Active OS copies the changed files to the image repository system. Determining which files have changed requires communication back and forth between the target computer system and the image repository system (e.g. comparing time stamps of corresponding blocks on the target computer system and the image repository system).
During both provisioning and snapshotting, the target computer system may be unavailable to perform other work.

Provisioning and snapshotting using copy on read/write and transient virtual machine technology


A playhouse structure arranged to include a front and rear wall in a parallel orientation relative to one another, having first and second end walls. The first and second end walls are hingedly mounted intermediate their width and are hingedly mounted at each of their sides to the associated front and rear walls to permit projection of the first and second end walls intermediate the front and rear walls, with the roof structure having first and second roof plates hingedly mounted to the front and rear walls respectively and to one another. A modification of the invention includes crown trusses having projections projected through the roof plates and into one of the end walls to provide for a rigid structure.

1. Field of the Invention
The field of invention relates to playhouse assemblies, and more particularly pertains to a new and improved collapsible and extensible playhouse wherein the same is arranged for ease of storage during periods of non-use and permitting the end walls to be oriented and projected in an orthogonal orientation between the front and rear walls.
2. Description of the Prior Art
Playhouse structure of various types are utilized throughout the prior art for the amusement and entertainment of children and the like. Such an organization is indicated in the U.S. Pat. No. 4,569,664 providing a playhouse structure arranged for ease of erection, with U.S. Pat. No. 4,964,249 indicating the use of a foldable playhouse having interfolded roof and side wall structures.
Further examples of children's playhouse structure is exemplified in U.S. Pat. Nos. 3,977,119 and 3,729,881.
The instant invention attempts to overcome deficiencies of the prior art by the particular positioning and arrangement of the hinge structure utilizing interdigited side portions of the front, rear, and end walls and in this respect, the present invention substantially fulfills this need.


A semiconductor device and its method of formation are disclosed wherein a surface of a semiconductor substrate is planarized to form an interconnect (1244) within a dielectric layer (1243). The top surface of the dielectric layer is then recessed with respect to a top surface of the interconnect to form a step (201). An opaque film (301) is then deposited over the surface of the semiconductor substrate. The opaque film (301) is lithographically patterned and etched, wherein an alignment of the patterning layer (401) is accomplished using topographically discernable features (303) that are formed in the opaque film (301) in regions where the step (201) between the interconnect (1244) and dielectric layer (1243) is produced.

The invention relates generally to semiconductor devices and more particularly to the alignment of features on a semiconductor device substrate.
Manufacturing semiconductor devices requires depositing various layers of materials over semiconductor device substrates and then patterning and etching the layers to form semiconductor device features. The successive steps of depositing, patterning, and etching eventually form is more complicated semiconductor device structures, such as transistors, capacitors, interconnects, and the like. Aligning the features formed at one level to a previous level requires using advanced photolithography equipment. Typically, the alignment requires an ability to detect optical contrasts from alignment marks formed in underlying layers. This can usually be accomplished by aligning the patterning layer to alignment marks through transparent films, such as silicon dioxide, or by using the surface topography created by underlying alignment marks.
However, semiconductor manufacturing is increasingly using chemical mechanical polishing (CMP) processes to planarize the substrate surface before depositing subsequent films. Planarizing the surface reduces the amount of topography that can be used for alignment purposes. Therefore, when non-transparent films are deposited over the surface of a planarized substrate, no means exist to adequately align either through the film to an underlying feature or using surface topography. Consequently, patterning process at these levels can be highly inaccurate and the resulting increase in the level of lithographic reworks (i.e. removing and re-patterning the resist) due to poor alignment can be costly and time-consuming.
Prior art methods that attempt to overcome this problem include over-polishing and upsizing alignment mark dimensions to create topography in the substrate surface. Unfortunately, the topography resulting from the over-polishing only produces smooth changes in the surface of the substrate, which provides poor contrast. Upsizing alignment mark dimension provides topography by preventing the alignment marks from completely filling with deposited material. However, this topography similarly has smooth surfaces that are difficult to use for alignment purposes.

Semiconductor device and method of formation


An electrical coupling device for solar cells includes a conductive member characterized by a single shaped thickness of material. The member includes a first portion extending a first length from a first end region and a second portion extending a second length from a second end region. The member also includes a U-like-shaped portion including a first branch, a second branch, and a joint region integrally connecting the first branch and the second branch. The first branch is integrally connected to the first portion at a first junction region and the second branch is integrally connected to the second portion at a second junction region. The first end region connects a first electrical lead of a first solar cell and the second end region connects a second electrical lead of a second solar cell which is disposed at flexible distance allowed by deforming the U-like-shaped portion elastically.

The present invention relates generally to solar energy techniques. In particular, the present invention provides a method and device for solar cell electrical coupling. Moreover, the present invention provides an electrical coupling device for interconnecting solar cells and/or connecting solar cells with external conducting leads. Merely by way of example, the invention has been applied to solar panels, commonly termed modules, but it would be recognized that the invention has a much broader range of applicability.
As the population of the world increases, industrial expansion has lead to an equally large consumption of energy. Energy often comes from fossil fuels, including coal and oil, hydroelectric plants, nuclear sources, and others. As merely an example, the International Energy Agency projects further increases in oil consumption, with developing nations such as China and India accounting for most of the increase. Almost every element of our daily lives depends, in part, on oil, which is becoming increasingly scarce. As time further progresses, an era of "cheap" and plentiful oil is coming to an end. Accordingly, other and alternative sources of energy have been developed.
Concurrent with oil, we have also relied upon other very useful sources of energy such as hydroelectric, nuclear, and the like to provide our electricity needs. As an example most of our conventional electricity requirements for home and business use comes from turbines run on coal or other forms of fossil fuel, nuclear power generation plants, and hydroelectric plants, as well as other forms of renewable energy. Often times, home and business use of electrical power has been stable and widespread.
Most importantly, much if not all of the useful energy found on the Earth comes from our sun. Generally all common plant life on the Earth achieves life using photosynthesis processes from sun light. Fossil fuels such as oil were also developed from biological materials derived from energy associated with the sun. For human beings including "sun worshipers," sunlight has been essential. For life on the plant Earth, the sun has been our most important energy source and fuel for modern day solar energy.
Solar energy possesses many characteristics that are very desirable! Solar energy is renewable, clean, abundant, and often widespread. Certain technologies developed often capture solar energy, concentrate it, store it, and convert it into other useful forms of energy.
Solar panels have been developed to convert sunlight into energy. As merely an example, solar thermal panels often convert electromagnetic radiation from the sun into thermal energy for heating homes, running certain industrial processes, or driving high grade turbines to generate electricity. As another example, solar photovoltaic panels convert sunlight directly into electricity for a variety of applications. Solar panels are generally composed of an array of solar cells, which are interconnected to each other. The cells are often arranged in series and/or parallel groups of cells in series. Accordingly, solar panels have great potential to benefit our nation, security, and human users. They can even diversify our energy requirements and reduce the world's dependence on oil and other potentially detrimental sources of energy.
Although solar panels have been used successful for certain applications, there are still certain limitations. Solar cells are often costly. Depending upon the geographic region, there are often financial subsidies from governmental entities for purchasing solar panels, which often cannot compete with the direct purchase of electricity from public power companies. Additionally, the panels are often composed of silicon bearing wafer materials. Such wafer materials are often costly and difficult to manufacture efficiently on a large scale. Availability of low-cost solar panels is also somewhat scarce because of limited sources of photovoltaic silicon bearing materials. These and other limitations are described throughout the present specification, and may be described in more detail below.
One of solutions for making low-cost solar panels is to assemble a plurality of solar cells each of which utilizes a light concentrator and less than 50% of photovoltaic materials. As an important element for assembling a plurality of solar cells, an electrical coupling device for interconnecting solar cells and/or for connecting solar cells with external conducting leads is highly desirable.

Electrical coupling device and method for solar cells


An automated system for message analysis whereby messages within a given category may be identified and processed as a category connote. While a domain of messages may be monitored and processed in the due course of business, connote message are different. For example, a number of messages may fall into a domain of “poor airline food.” Such messages may be processed in the due course of business. However, a message with a different aspect, such as, “I found glass in my food,” may be initially identified as begin within the domain of “poor airline food,” and processed further to distinguish the message as being a connote with regard to the “poor airline food” category and warranting special handling.

Social media messages may be monitored to determine trends and identify issues that may be arising. A keyword, hash tag, or phrase of interest may be found in messages a number of times and examined over time. In such a manner, the popularity of a particular issue within a community of users may be determined.
Clustering is a method used to group a set of related items where the items in the cluster are more closely related to each other than to items in other clusters. Cluster analysis is typically used in data mining. Comments on social media are expected when an event occurs, and data analysis can be very useful.
A large scale event like a natural disaster typically creates a large and related set of social media comments. A significantly delayed flight may create a similar, but smaller set of comments. Each of these sets of comments represents a cluster. Within sets of comments, or clusters, there is typically an average nominative value and the cluster develops in a certain way. A known cluster or trend gives expected results that are typical and predictable.


A fluid injector includes a valve body, a valve needle and axially moveable in the valve body between a closing position that prevents a fluid injection and further positions that permit the fluid injection, an armature coupled to the valve needle for displacing the valve needle away from the closing position, and a solenoid assembly including at least a first and second coil and operable to magnetically actuate the armature via an electrical signal. A method for operating the fluid injector includes applying the electrical signal to the first coil to generate a magnetic field to move the armature for displacing the valve needle away from the closing position, evaluating a voltage across terminals of the first coil, and controlling the second coil with a further electrical signal to saturate a magnetic field in a portion of the valve body between the armature and solenoid assembly during evaluating the voltage.

Fluid injectors are in widespread use, in particular for internal combustion engines where they may be arranged in order to dose fluid into an intake manifold of the internal combustion engine or directly into the combustion chamber of a cylinder of the internal combustion engine.
In order to enhance the combustion process in view of the creation of unwanted emissions, the respective fluid injector may be suited to dose fluids under very high pressures. The pressures may be in case of a gasoline engine, for example, in the range of up to 200 bar and in the case of diesel engines in the range of up to 2000 bar.
WO 2011/000663 A1 discloses a fluid injector comprising a longitudinal axis and a valve needle, which is axially moveable and operable to prevent a fluid injection in a closing position and to permit the fluid injection in further positions. The fluid injector also comprises an armature being mechanically coupled to the valve needle, and a solenoid assembly which comprises at least a first and second coil and which is operable to magnetically actuate the armature via an electrical signal applied to at least one predetermined assortment of the at least two coils. This enables an adjustment of the fluid injection to the current operating conditions, in particular a fluid pressure, of the fluid injector. Applying the electrical signal on a first predetermined assortment comprising more than one coil contributes to increasing the solenoid inductance and the magnetic force acting on the armature. This permits the fluid injection in a fast manner. On the other hand, if the fluid pressure within the fluid injector is relatively low the electrical signal may be applied to a second predetermined assortment comprising less coils than the first assortment. This reduces e.g. ohmic drops due to reduced resistance and contributes to ensuring an efficient operation of the fluid injector.
Due to always more stringent requirements, the solenoid injector must be controllable in order to deliver very small fuel quantities. In particular, this is true for solenoid injectors under so called ballistic operating mode. To control the injector, an electrical feedback signal is used to detect the movement changes of an injector armature when the armature-needle assembly reaches a fully opened and a fully closed position. Evaluating this signal with an appropriated controlling unit makes it possible to control minimum dispensable fuel delivery quantities. The electrical feedback signal is measured between the terminals of a coil which is used to generate a magnetization of the armature in order to open and close an injector valve.
In order to achieve a good signal quality of the electrical feedback signal available from the injector circuit, the injector body needs to have a restriction (a thin valve body section) in the area of the coil which supports the electrical signal development to detect the closing position of the armature-needle assembly. This design requires that the valve body is made by special "not good" magnetic steel, for example 415M SS, with limited saturation level at around 1 Tesla. As a disadvantage, this has the effect that the electrical signal amplitude will be reduced. Nevertheless, a valve body having a section with reduced thickness must accomplish all requirements coming with regard to the structural resistance. Hence, the material of the valve body must also support higher mechanical stresses.

Fluid injector and method for operating a fluid injector


In a semiconductor device, a plurality of first diffusion regions of a first conductive type are formed on a diffusion layer well of the first conductive type. A plurality of second diffusion regions of a second conductive type are formed on the diffusion layer well of the first conductive type. An impurity concentration of each of the plurality of first and second diffusion regions is desirably higher than that of the diffusion layer well. The plurality of first diffusion regions are connected to a first common node as an anode and the plurality of second diffusion regions are connected to a second common node as a cathode.

1. Field of the Invention
The present invention relates to a semiconductor device, more particularly to a protection element to protect an internal circuit of a semiconductor device.
2. Description of the Related Art
In recent years, in order to protect the internal circuit of an IC from current of electrostatic surge, a protection element is provided for the input terminal. As this protection element, a diode with a high breakdown voltage is generally used. FIGS. 1A and 1B show such a conventional high breakdown voltage diode. Referring to FIGS. 1A and 1B, in the conventional diode, a P-type well 801 is formed in a P-type semiconductor substrate 800, and a P+-type diffusion layer 803 is formed in a ring along an outer circumference of the P-type well 801 to have a higher impurity concentration than the P-type well 801. An N+-type diffusion layer 804 is formed in a region of the P-type well 801 surrounded by the P+-type diffusion layer 803. It should be noted that the P+-type diffusion layer 803 and the N+-type diffusion layer 804 separated by an element separation region (insulation region) 802, and contacts 805 are formed on the respective diffusion layers to form an anode and a cathode. In this way, in the conventional high breakdown voltage diode, the breakdown voltage is improved by forming the large N+-type diffusion layer 804. For example, such a conventional example is disclosed in Japanese Laid Open Patent Application (JP-A-Heisei 1-214055)
However, in the structure of the above-mentioned conventional high breakdown voltage diode, in order to need a large region for improvement of the breakdown voltage, the high integration becomes difficult.


Mid-IR spectrometer with no moving parts, which is small and compact, low power consuming, and can monitor blood sugar (glucose) and other blood and bodily fluid analytes on a continuing basis. It has many applications in the health, forensic, environmental and other areas.

Lightweight wearable sensors (finger, toe, earlobe clip-on's) have been in wide use for monitoring hospital patients for the oxygen content in their blood, non-invasively, by detecting electromagnetic radiation in the near-infrared ("near IR").
However, many chemical compounds in the blood or other bodily fluids, which are detectable analytes or detectable components of pathogens, are more clearly identified from their spectrum in the mid-infrared ("mid-IR").
The source of these spectra typically arises from molecular vibrations due to the nature of the bonds within a molecule, and mediated by the molecular structure, so that each molecular species tend to have distinct spectra. The near IR spectra of many in vivo substances, such as glucose in blood, are obscured by spectral absorption peaks or plateaus in the spectrum of the water in blood, for example. However, these spectra tend to extend into the mid infrared ("mid IR").
Typical spectrometers for the mid-IR tend to need cooling and are generally bulky and expensive, and are not suitable to be worn by a human or an animal, able to freely moving about and attending to regular business. There is a long-felt need for a wearable analyte detector which is accurate and remains in calibration.
In a molecule, the atoms are not held rigidly apart. Instead they can move, as if they are attached by a spring of equilibrium separation. See FIG. 1 (prior art). This bond can either bend or stretch. If the bond is subjected to infrared radiation of a specific frequency (between 300-4000 cm−1), it will absorb the energy, and the bond will move from the lowest vibration state, to the next highest. In a simple diatomic molecule, there is only one direction of vibrating, stretching. This means there is only one band of infrared absorption. Weaker bonds require less energy, as if the bonds are springs of different strengths. If there are more atoms, there will be more bonds, and therefore more modes of vibrations. This will produce a more complicated spectrum. For a linear molecule with "n" atoms, there are 3n−5 (for n=2 or greater) vibration modes, if it is nonlinear, it will have 3n−6 for (n>2) modes. These resonant frequencies are determined by the shape of the molecular potential energy surfaces, the masses of the atoms and, by the associated vibronic coupling. The resonant frequencies can be, in a first approximation to a description of the molecular system, related to the strength of the bond, and the mass of the atoms at either end of it. Thus, the frequency of the vibrations can be associated with a particular bond type. Measurement of physiological concentrations of compounds in vivo in situ in blood, such as glucose ("blood sugar"), or in saliva (or other bodily fluids) by infrared (IR) absorption spectroscopy is interfered with by water (and protein) absorption spectra. The spectral absorbance of water in the mid-IR does not obscure the 900-1500 cm−1 'fingerprint' spectral bands and only partially obscures the 2700-3600 cm−1 spectral bands that are rich in characteristic absorbencies.
Thus, the rich mid-IR absorption texture of organic compounds and the diversity of the absorption bands for water result in potential compound quantifications, which are significantly better than for that of the near-IR.
Bodily fluids can be similarly analyzed in the mid-IR by applying the mid-IR spectral detector-analyzer to a transparent (in the mid IR) "cell," or fluid holder, where the fluid may be a saliva sample or urine sample, for example, and which the spectral-detector clamps around, or, onto, rather than clamping around, or onto, a finger or an earlobe.
A reliable spectral analyzer, which has sufficient effective penetrative depth (by operating reliably in the mid-IR), to analyze in vivo blood glucose, or other fluid, "off-line", in a cell, is believed to not exist heretofore.
Operating as a "pathometer," a mid-IR spectral detector-analyzer, would answer a long-felt need, namely, as an apparatus, which would detect the antigenic materials or actual pathogens or pathogenic components from viruses, bacteria or pathogens from saliva, and fluid samples from ulcers or open sores after the collection of very small samples from these various sites.
Both type I and Type II diabetes are clinically controlled with insulin injections, typically taken at discrete times by pricking the skin so as to draw a droplet of blood and blotting on a paper test strip which then reads the "blood sugar" concentration and by the person with the diabetes regulating the blood sugar in vivo blood sugar concentration by discrete injections of insulin administered by hypodermic needle. There are also, known in the art, wearable insulin pumps which are typically programmed, or manually set, or by a combination of programming and manual setting set, to deliver insulation amounts on a more continuous basis into, in vivo, the bloodstream, via a pre-positioned hypodermic needle, or other means.
The "missing link" has heretofore been the glucose sensor. Although measurement of oxygenation by wearable or clip-on sensors is widely and routinely used for monitoring hospital patient, a similar application for blood sugar (glucose) has not so far blossomed. The reason is that the continuous measurement of glucose levels in the blood by a non-invasive technique requires a more subtle approach than the extrapolation of blood oxygen-level techniques by "brute force," in the scientific sense.
Measuring physiological concentrations of glucose in blood by infrared (IR) absorption spectroscopy for glucose has concentrated on the near IR (4000-6000 cm−1), see FIG. 2 (prior art1) but interference from protein and water absorption spectra has precluded univariant calibration or glucose concentrations measurements. The 2%-5% absorbance for the glucose spectral bands (FIG. 2, prior art) exaggerates the spectral diversity of the near IR. The circled portion of the IR transmission curve between 4000-4600 cm−1 (FIG. 2, prior art2) puts this in perspective. In FIG. 4 (prior art), the misrepresentation is magnified by referencing relative absorbance {0-1} rather than actual absorbance (0.02-0.05). FIG. 4 (prior art) also demonstrates that these glucose absorbencies, weak though they be, are masked by protein and water absorption.
Glucose exhibits a high spectral diversity, since there are more than twenty absorption peaks over the mid IR. As shown in FIG. 3 (prior art) these absorption peaks are between 2700-3600 cm−1 and 900-1500 cm−1. The spectral absorbance of water in the mid IR (FIG. 5, prior art) does not obscure the 900-1500 cm−1 spectrum and the spectral absorption of Bovine Albumin (plasma matrix) in the IR (FIG. 6, prior art) only partially obscures the 2700-3600 cm−1 and 900-1500 cm−1 spectrums that are two of the spectral bands rich in glucose absorbance (FIG. 7, prior art).
The rich mid-IR absorption texture of glucose and the diversity of the absorption bands for water and plasma matrix result in a potential glucose quantification, which will be significantly better than for that of the near-IR. The spectral diversity will also improve the discrimination potential of component regression techniques and provide more spectra for component regression analysis spectroscopy.

Non-invasive qualitative measurement of chemistry of blood and bodily fluids


An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to (i) receive an image data stream comprising a plurality of frames each having a plurality of regions, (ii) select a particular region to be marked as being homogeneous or not homogeneous, and (iii) determine whether a group of neighboring regions to the selected region are qualified or not qualified. The second circuit may be configured to mark the selected region as being homogeneous when one or more of the adjacent regions are (i) qualified and (ii) previously marked as being homogeneous.

Conventional block-based image processing (such as filtering, segmentation and compression) usually involves determining the homogeneity of the various blocks within the image data stream. A homogeneous block has no strong edge or no high frequency texture. A non-homogeneous block either has strong edges or has many high frequency textures.
The homogeneity of blocks can be used to select different processing approaches. In particular, Motion Estimation (ME) and/or Motion Compensation (MC) in video compression is often performed with different block partitions for homogeneous Macro-Blocks (MB) and non-homogeneous MBs. Since homogenous blocks use less processing resources, efficient and accurate detection of the homogeneity of blocks is important in many image processing applications. In conventional implementations, the homogeneity of a block is often detected in terms of the pixel-by-pixel texture information of the block. If the edge strength in a block is below a threshold, the block is considered homogeneous. Otherwise, the block is considered non-homogeneous.
Linear or non-linear filters are used for edge strength detection. Linear or non-linear filters are typically computationally expensive in hardware implementations and some software implementations. The computational complexity is determined by the filter, the filter kernel size, the image resolution, etc.
It would be desirable to provide a method and/or apparatus for detecting the homogeneity of a number of blocks in an image processing system that reduces the amount of computational resources when compared with using only linear or non-linear filters.

Method and/or apparatus for detecting homogeneity of blocks in an image processing system


A supercharging system, in particular an at least two-stage supercharging system, including a first stage and a second stage for an internal combustion engine having two cylinder banks. The at least two-stage supercharging system includes at least two charge air coolers. An exhaust gas turbocharger representing the first stage and an exhaust gas turbocharger representing the second stage are each situated next to one of the cylinder banks of the internal combustion engine.

The power limits of a supercharging system such as an exhaust gas turbocharger are increased, for example by regulated two-stage supercharging, as is known from Bosch, Kraftfahrtechnisches Taschenbuch [Automotive Handbook], 23rd Edition, Vieweg, 1999, pages 445 through 446. In regulated two-stage supercharging, two exhaust gas turbochargers of different sizes are connected in series. The exhaust gas mass flow first flows into an exhaust gas manifold. From there, the exhaust gas mass flow is expanded via a high pressure turbine. In the case of large exhaust gas volumes, which can occur at high speeds, a portion of the exhaust gas mass flow may be redirected around the high pressure turbine via a bypass. The entire exhaust gas mass flow is subsequently used by a low pressure turbine connected downstream from the high pressure turbine. The incoming fresh air mass flow is first precompressed by a low pressure stage and then further compressed in the high pressure stage. Ideally, the fresh air mass flow undergoes intermediate cooling between the low pressure stage and the high pressure stage.
At approximately 50% to 60% of the nominal speed, the exhaust gas is completely redirected around the high pressure turbine via a bypass. As a result, the high pressure compressor, which is driven by the high pressure turbine and is connected in series to a low pressure compressor driven by the low pressure turbine, is simultaneously taken out of operation. In this case, the high pressure compressor is bypassed via a charge air line in which a nonreturn valve is provided to prevent charge air from flowing back via the charge air line during operation of the high pressure compressor.
Two-stage supercharging in a supercharging system is generally carried out by two series-connected exhaust gas turbochargers. This achieves a two-stage expansion via the two turbine parts of the two exhaust gas turbochargers as well as a two-stage compression on the compressor side of the two series-connected exhaust gas turbochargers. The disadvantages of unregulated two-stage supercharging are avoided by regulating devices for bypassing the high pressure turbine and high pressure compressor.
Cutting off the exhaust gas mass flow upstream from the high pressure turbine regulates the power of the high pressure turbine. The exhaust gas mass flow leaving the high pressure turbine mixes with a portion of the exhaust gas mass flow flowing through the bypass valve and is subsequently expanded in the low pressure turbine. A disadvantage of this procedure is the fact that the difference in pressure present between the outlet side of the internal combustion engine and the output of the high pressure turbine is expanded by a bypass valve without reducing work. In the case of unregulated two-stage supercharging, the fact that the entire exhaust gas mass flow is expanded in an unregulated manner in the high pressure and low pressure turbines is disadvantageous. This means that the power of the two-stage supercharging system rises in an unregulatable manner between a specific load point and the maximum load point, which is unsuitable for use in an internal combustion engine of a passenger car. Due to the design of the high pressure and low pressure turbines in the case of unregulated two-stage supercharging, an unsatisfactory response characteristic exists in the operating range up to and above the design point.
European Patent Application No. EP 0 718 481 relates to an exhaust gas recirculation system for a supercharged internal combustion engine. To lower exhaust emissions, in particular to substantially reduce NOx levels in the partial load range of the internal combustion engine, a method is known for recirculating a portion of the exhaust gas to suppress NOx formation by reducing the oxygen content. In supercharged engines, recirculating the exhaust gas directly results in a noticeable decrease in the power of the exhaust gas turbine. This decrease is even more pronounced in a two-stage supercharging system. To avoid power decreases of this type, which usually go hand-in-hand with increased fuel consumption, a method is described in which the exhaust gas to be recirculated is removed from between the high pressure turbine part and the low pressure turbine part and supplied to the inlet of the low pressure compressor which is higher in relation to the low pressure turbine. This ensures an exhaust gas recirculation method which minimizes increased fuel consumption.
The design of a two-stage supercharging system poses a particular difficulty in internal combustion engines having a V-shaped cylinder layout, because the two cylinder banks must be uniformly impinged upon by the turbochargers. If only one turbocharger is used as the high pressure stage and one turbocharger as the low pressure stage, the supercharging system may be positioned in front of or behind the internal combustion engine without taking up a lot of space. Although this provides a number of advantages, it nevertheless has the disadvantage that there is not always enough room in the engine compartment.

Supercharging system for two-stage supercharging of V-type internal combustion engines


A method of and system for allocating a purchasing contract over a temporal period associated with the purchasing contract is disclosed. The method includes receiving data regarding the purchasing contract in a computerized system, distributing the received data regarding the purchasing contract over the associated temporal period, and applying at least one rule to the distributed data to determine whether the distribution of the data regarding the purchasing contract should be accepted or rejected. The system includes means for receiving data regarding the purchasing contract, means for distributing the received data regarding the purchasing contract over the associated temporal period, and means for applying at least one rule to the distributed data to determine whether the distribution of the data regarding the purchasing contract should be accepted or rejected.

The present description relates generally to the field of methods of and systems for purchasing retail products and/or services, and more specifically to methods of and systems for allocating a purchasing contract, such as an OTB-relevant purchasing contract, for retail products and/or services over a plurality of budgeting periods during the term of the contract.
Purchasing retail products and services from a supplier or provider typically involves sending a purchase order to the supplier requesting a specific number of items for a specific price. The number of items multiplied by the price of the items provides a total cost associated with the purchase order. Prior to sending the purchase order, the purchase order may need to be approved by an entity, such as a budgeting department. The entity may apply one or more rules, or checks, to the purchase order in determining whether to approve the purchase order. For example, a rule may dictate that the approval is granted or denied based on whether incurring the total cost of the purchase order is acceptable in view of budget constraints. Accordingly, the purchase order is approved or rejected based on budget constraints prior to being sent to the supplier.
The rules that are applied to the electronic purchase order may be any of a plurality of types of rules. For example, the rule may be a budgeting rule. Budget rules describe the amount of money available to purchase merchandise for a given time period. During a pre-season planning and buying phase, the budget rules may be used by planners and buyers to control their purchasing budget. During a seasonal phase, the budget rules may be utilized in calculating performance as the budget rules are updated based on sales activity. For example, planners and buyers may monitor the updated budget rules to determine if each category's performance is proceeding according to plan or if corrective steps, such as price reductions or stop orders, need to be taken to manage inventory.
The business of providing retail products and services can require that certain purchase orders be processed in a very short amount of time, while other purchase orders must be placed well in advance of the desired delivery. For example, changes in current trends in the fashion industry may require that inventory be increased on short notice. Additionally, fashion articles may require ordering well in advance of delivery, in some cases six months or more in advance. For certain aspects of the fashion industry, items may be required to be ordered one or more seasons in advance. Further, tracking inventory and budgets for seasonal items can be important to the profitability of business. For example, identifying a particularly fast selling item and ordering additional quantities of the fast selling item within a prescribed budget may increase the profitability of a retail location.
As part of the procurement process, providers of retail sales articles and services often enter into long-term purchasing agreements such as purchasing contracts in order to secure a supply of materials or provision of services over a certain period based on predefined conditions. For example, a provider may negotiate a central contract for an entire group of stores in order to obtain more favorable pricing conditions. Purchase orders for required quantities of retail sales articles or services may then be released against the contract throughout its duration. Accordingly, optimization of the smooth flow of the procurement process includes efficiently incorporating data from purchasing contracts.
As the term of a purchasing contract usually extends over more than one delivery or purchasing period used for budgeting purposes, the quantities or other amounts in the contract need to be distributed over each budgeting period such that purchase orders for required quantities of retail products or services may then be released against the purchasing contract throughout its duration for each distribution. In turn, a budget rule may need to be applied to the purchasing contract to determine whether sufficient funding is available or was reserved in the corresponding budget for the retail products or services.
Thus, there is need for a method of and system for allocating a purchasing contract, such as an OTB purchasing contract, which is configured for automated distribution of quantities or other amounts in the purchasing contract over several budgeting periods. There is further need for such a method and system configured for automated application of a budget rule to each distribution to determine whether sufficient funding is available or was reserved in the corresponding budget for the retail products or services.

Method of and system for allocating an OTB-relevant purchasing contract


A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.

1. Field of the Invention
The present invention relates to a method for manufacturing a silicon semiconductor thin film having crystallinity which is formed on a substrate having an insulating surface such as a glass substrate.
2. Description of the Related Art
In recent years, attention has been paid to a technique by which a thin-film transistor is formed using a silicon thin film formed on a glass substrate. The thin-film transistor of this type is mainly used for an active matrix liquid-crystal electro-optical device, and other thin-film integrated circuits. The liquid-crystal electro-optical device is designed such that liquid crystal is sealingly interposed between a pair of glass substrates, and an electric field is applied to the liquid crystal, to thereby change the optical characteristic of the liquid crystal, thus conducting image display.
In particular, the active matrix liquid-crystal display unit using the thin-film transistors is characterized by arranging the thin-film transistors as switches for the respective pixels, and controlling charges held by pixel electrodes. The active matrix liquid display unit is used for the display of a variety of electronic equipments (for example, a portable word processor or a portable computer) because it can display a fine image at a high speed.
An amorphous silicon thin film is generally employed for the thin-film transistor used in the active matrix liquid-crystal display unit.
However, the thin-film transistor using the amorphous silicon thin film suffers from problems stated below.
(1) A higher-quality image display cannot be conducted because the characteristic is low.
(2) A peripheral circuit for driving the thin-film transistor disposed in a pixel cannot be constituted.
The above problem (2) can be classified into two problems one of which is that a CMOS circuit cannot be constituted, since a p-channel type thin-film transistor is not put into practical use for the thin-film transistor using the amorphous silicon thin film, and the other is that the peripheral drive circuit cannot be constituted, since the thin-film transistor using the amorphous silicon thin film cannot conduct high-speed operation and also does not allow a large current to flow therein.
As a method for solving those problems, there is a technique by which a thin-film transistor is formed using a crystalline silicon thin film. As methods for obtaining the crystalline silicon thin film, there are a method for subjecting the amorphous silicon film to a heat treatment, and a method for irradiating a laser light onto the amorphous silicon film.
The method for crystallizing the amorphous silicon film through the heat treatment generally suffers from problems stated below. In order to form the thin-film transistor used in the liquid-crystal electro-optical device, the thin-film transistor is usually required to be formed on a translucent substrate. The translucent substrate may be formed of a quartz substrate or a glass substrate. However, the quartz substrate is expensive and therefore cannot be used in the liquid-crystal electro-optical device which suffers from such a technical problem that the costs must be decreased. Hence, although the glass substrate is generally used, it suffers from such a problem that its heat resistant temperature is low.
It has been proved from the experiment that a temperature of 600xc2x0 C. or higher is required to crystallize the amorphous silicon film by heating, and also it has been proved from the experiment that several tens hours are required as a heating period. Such a high-temperature and long-period heating cannot be conducted on a large-area glass substrate.
Also, there has been known a technique in which the amorphous silicon film is crystallized by the irradiation of a laser light. However, it is difficult to uniformly irradiate a laser light over a large area of the film, or to irradiate a laser light while maintaining a given irradiation power as a real problem.
The present invention has been made to eliminate the above problems, and therefore an object of the present invention is to provide a method for manufacturing a semiconductor thin film, which uses the catalytic action of a metal element and manufactures a crystalline silicon film excellent in characteristics.
In order to solve the above problem, the present invention has been achieved by the provision of a method for manufacturing a semiconductor thin film, comprising the steps of:
introducing metal elements into an amorphous silicon film;
crystallizing said amorphous silicon film to obtain a crystalline silicon film;
forming a protective film on said crystalline silicon film;
forming an amorphous silicon film containing impurities therein on said protective film;
diffusing said metal elements in said amorphous silicon film containing the impurities therein; and
removing said amorphous silicon film containing the impurities therein with said protective film as an etching stopper.
In the above method, the amorphous silicon film to be crystallized may be formed of a film which is formed on a glass substrate or a glass substrate on which an insulating film is formed through a plasma CVD method or a low pressure thermal CVD method.
Also, the metal element may be one kind of element or plural kinds of elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au. Those metal elements have the catalytic action that promotes the crystallization of silicon, and Nickel (Ni) has the particular catalytic action among those metal elements.
A method for introducing the above metal elements may be a method for forming a layer made of the above-mentioned metal or a layer containing the metal therein on the surface of the amorphous silicon film. Specifically, there are methods for forming a metal-element layer or a layer containing the metal elements therein through the CVD method, the sputtering method, the vapor deposition method or the like, and a method for coating solution containing the metal elements therein on the amorphous silicon film.
However, in case of using the CVD method, the sputtering method, the vapor deposition method or the like, since it is difficult to form a very-thin uniform film, the metal elements non-uniformly exist on the amorphous silicon film, which leads to such a problem that the metal elements are liable to locally exist at the time of crystal growth. On the other hand, the method of using the solution is very preferable, since the concentration of the metal elements can be readily controlled, and the metal elements can be held in uniform contact with the surface of the amorphous silicon film.
In order to crystallize the amorphous silicon film into which the metal elements that promote the crystallization of silicon are introduced, heating may be conducted at a temperature of 450xc2x0 C. or higher. The upper limit of the heating temperature is limited by the heat resistant temperature of the glass substrate used as a substrate. In case of the glass substrate, the heat resistant temperature can be regarded as a strain point of glass. For example, because a Corning 1737 glass substrate is 667xc2x0 C. in strain point, the heating temperature can be set to about 620xc2x0 C., and it is proper from the viewpoints of the heat resistance or the productivity of the glass substrate.
Also, in case of using material that withstands even a temperature of 1,000xc2x0 C. or higher such as a quartz substrate as a substrate, the heating temperature can be increased in accordance with its heat resistant temperature. In addition, the higher the heating temperature is, the more excellent crystallinity can be obtained for the film.
In the above constitution, the step of forming the protective film may be a step of forming a silicon oxide film, silicon nitride film, and a silicon oxynitride film through the plasma CVD method. Alternatively, there can be applied a step of oxidizing the surface of the crystalline silicon film by the irradiation of UV rays, heating or the like in the air.
The protective film is adapted to function as an etching stopper and may be a film by which selectivity can be obtained when etching the silicon film. Also, the thickness of the protective film may be about several tens to 100 xc3x85. The reason why the protective film is thus thinned is that the metal elements need to be movable from the crystalline silicon film through the protective film.
Furthermore, in the above constitution, the amorphous silicon film containing the impurities therein is adapted to function as a film for diffusing the metal elements and may be an amorphous silicon film which is formed through the general CVD method. For example, there can be used an amorphous silicon film which is obtained, for example, through a method identical with a method for forming the amorphous silicon film which is a start film of the crystalline silicon film which has been crystallized by heating.
Also, the impurities contained in the amorphous silicon film are at least one kind of element selected from oxygen, carbon and nitrogen. For example, in the amorphous silicon film, the concentration of impurities is set to 1xc3x971019 to 1xc3x971021 atoms cmxe2x88x923 when the impurities are oxygen, and to 1xc3x971017 to 1xc3x971020 atoms cmxe2x88x923 when the impurities are carbon or nitrogen.
Because the silicon film containing the impurities therein is amorphous in quality (for example, having a large number of dangling bonds, defects and so on), the film per se has an effect of gettering the metal elements such as nickel. However, in the present invention, impurities are allowed to be contained in the silicon film so that the amorphous silicon film has more elements of gettering the metal elements. The elements of this type may be impurities, defects caused by binding of Si and the impurities, oxygen between the silicon binding, and so on.
An increase of the concentration of the impurities higher than the metal elements in the crystalline silicon film is effective in capturing more metal elements in the silicon film. Furthermore, it is effective that the amorphous silicon film is made thicker than the thickness of the crystalline silicon film. This is because the volume ratio of the amorphous silicon film to the crystalline silicon film can be increased as the silicon film is thick. Also, that the impurities such as oxygen are contained with high density in the amorphous silicon film enables more defects to be contained in the film when the silicon film is crystallized by heating, with the result that the above metal element can be gettered in the periphery of those defects.
Moreover, as a film by which the metal elements are diffused, an amorphous SixGe1xe2x88x92x film (0 less than xc3x97 less than 1) containing the above impurities therein can be used. In order to obtain amorphous SixGe1xe2x88x92x film, it may be formed through the plasma CVD method using silane (SiH4) and german (GeH4) as raw gas.
In the above method, the step of diffusing (drawing in) the metal elements in the silicon film containing the impurities therein can be conducted by a heat treatment. The metal elements are diffused in the silicon film containing the impurity elements therein by heating. As a result, because, in fact, the silicon film enables the metal elements in the crystalline silicon film to be drawn out, a crystalline silicon film which is low in the concentration of the metal elements and excellent in crystallinity can be obtained.
For example, if the silicon film containing the impurities therein has substantially the same thickness as that of the crystalline silicon film, the concentration of the metal elements in the crystalline silicon film can be set to xc2xd or less in average by heating.
It should be noted that because the above heat treating step is conducted to diffuse the metal elements outside the crystalline silicon film, the lower limit of the heating temperature is defined by a temperature at which the metal elements can be diffused. Since the effect of reducing the concentration of the metal elements in the crystalline silicon film is more enhanced as the heating temperature is high, it is preferable that heating is conducted at a temperature as high as possible. Hence, from the viewpoint of forming the crystalline silicon film on the substrate, the upper limit of the heating temperature is defined by the strain point or lower of the substrate.
It should be noted that the strain point of the substrate is a criterion for setting the heating temperature, and the heating temperature needs to be set to a temperature at which the deformation or the strain of the substrate is permissible. For example, as represented by RTP, heating can be conducted at a temperature higher than the strain point or higher of the substrate if it is a short-period of high-temperature heat treatment. Furthermore, the temperature and period of time necessary for the heat treatment depend on the pattern of the film to be processed, the rule of a design and so on. Hence, the heat treatment may be conducted at 550 to 1,050xc2x0 C. for about several minutes to 10 hours with the above conditions being satisfied.
There is a case in which when the heating temperature is set as high as possible as described above, the silicon film containing the impurities therein is crystallized due to the catalytic action of the metal elements which are diffused from the crystalline silicon film with the result that the silicon film is formed into a crystalline silicon film. Similarly, in this case, even though silicon containing the impurities therein is crystallized as described above, a large number of defects are formed inside of silicon and act as the selective gettering sink.
Because the crystallizing step is progressed while the metal elements are diffused, crystal growth is progressed from the surface of the crystalline silicon film toward the silicon film containing the impurities therein. Because the metal elements such as nickel have a tendency to concentrate on the tip portion of the crystal growth, even though the crystal growth is progressed, the concentration of the nickel elements in the crystalline silicon film can be reduced, and in addition, a region in which the nickel elements are segregated can be eliminated.
It should be noted that because the impurities are contained in the silicon film which allows the metal elements to be diffused, even though the silicon film is brought into crystallinity, two silicon films can be made different in quality from each other through the protective film.
Further, in the present invention, even though the step of diffusing the metal elements in the amorphous silicon film containing the impurities therein is conducted at a temperature at which the amorphous silicon film containing the impurities therein is not crystallized, its effect can be sufficiently obtained.
This is because the impurities such as oxygen are contained at a high concentration in the amorphous silicon film, heating restrains the amorphous silicon film from being crystallized, and the metal elements can be diffused even at a temperature at which the amorphous silicon film is not crystallized.
Further, the heat treatment is conducted for a long period of time at a temperature at which the amorphous silicon film containing the impurities therein is not crystallized, thereby being capable of more reducing the concentration of the metal in the crystalline silicon film although it is gradual. This action is a remarkable characteristic which cannot be found in the case where the amorphous silicon film is crystallized.
Further, because the amorphous silicon film containing the impurities therein is not allowed to be crystallized so that the amorphous silicon film into which the metal elements have been diffused and the crystallized silicon film are different in crystallinity from each other, there can be obtained such an effect that the step of forming the protective film that functions as an etching stopper can be omitted.
The removal of the silicon film containing the impurities therein on the protective film may be achieved by the application of the wet etching method or the dry etching method. In this situation, since the protective film functions as the etching stopper, the silicon film on the protective film into which the metal elements are diffused can be readily selectively etched.
In other words, in the above method, with the formation of the protective film that functions as the etching stopper on the crystalline silicon film, the silicon film on the protective film in which the metal elements exist with a high density can be surely and selectively removed regardless of whether the silicon film on the protective film is crystallized, or not, in the step of diffusing the metal elements.
Hence, in the present invention, in case of forming the protective film, the heating temperature in the step of diffusing the metal elements may be set to a temperature at which the concentration of the nickel elements in the crystalline silicon film can be reduced to a desired value, regardless of whether the silicon film containing the impurities therein is crystallized, or not.
In particular, in the case where the silicon film containing the impurities therein is not crystallized in the step of diffusing the metal elements, the step of forming the protective film that functions as the etching stopper on the crystalline. silicon film can be omitted.
Furthermore, in the above method, when halogen elements are contained in the atmosphere in the heating step of diffusing the metal elements, the gettering effect is more improved.
As a method for introducing the halogen elements, one kind or plural kinds of gases selected from HCl, HF, HBr, Cl2, F2 and Br2 may be used. In general, hydride of halogen may be used.
Since halogen reacts with nickel to form vaporizable halide of metal elements by heating the silicon film in the atmosphere containing halogen elements therein, the action of removing nickel from the crystalline silicon film is more promoted. Similarly, halide of the metal elements is formed on the crystalline silicon film, thereby being capable of making the metal elements in an electrically inactive state. With the introduction of halogen elements, the concentration of the metal elements can be set to {fraction (1/10)} or less at the maximum in comparison with a case in which no halogen element is introduced in the heat treatment.

Method for manufacturing a semiconductor thin film

Semiconductor Energy Laboratory Co., Ltd.


Disclosed herein is a technique for created an advanced MRAM array for constructing a memory integrated circuit chip. More specifically, the disclosed principles provide for an integrated circuit memory chip comprised of a combination of at least one of an array of high-speed magnetic memory cells, and at least one of an array of high-density magnetic memory cells. Accordingly, a memory chip constructed as disclosed herein provides the benefit of both high-speed and high-density memory cells on the same memory chip. As a result, applications benefiting from the use of (or perhaps even needing) high-speed memory cells are provided by the memory cells in the high-speed memory cell array.

An MTJ memory device comprises three basic layers, a free ferromagnetic layer, an insulating tunneling barrier, and a pinned ferromagnetic layer. The magnetization moments of the free ferromagnetic layer are free to rotate under an external magnetic field. The pinned ferromagnetic layer can comprise a ferromagnetic layer and/or an anti-ferromagnetic layer that pins the magnetic moments in the ferromagnetic layer. Thus, the magnetization moment of the pinned ferromagnetic layer is pinned in a fixed direction. A very thin insulation layer forms the tunneling barrier between the pinned and free ferromagnetic layers.
The MTJ memory device can be electrically represented as a resistor. The size of the resistance depends upon the orientation of the magnetization of the free ferromagnetic layer and the pinned ferromagnetic layer. As is understood by those skilled in the art, the MTJ memory device has a relatively high resistance when the magnetic vectors are misaligned (point in opposite directions) and a relatively low resistance when the magnetic vectors are aligned. That is, an MTJ memory device stores a bit of information as the relative orientation of the magnetizations of the free ferromagnetic layer and the pinned ferromagnetic layer. In other words, the magnetization of each MTJ memory device at any given time assumes one of two stable orientations. These two stable orientations, referred to as "parallel" and "anti-parallel" magnetic orientation, represent logic values of "0" and "1", for example.
To write or change the state in a basic MTJ memory device, an external magnetic field can be applied that is sufficient to completely switch the stable orientation of the magnetization of the free ferromagnetic layer. To sense states in the MTJ memory device, a read current can be applied through the MTJ memory device. As the magneto-resistance varies according to the state stored in the MTJ memory device, the logic state of the MTJ memory device can be sensed by obtaining the voltage difference across the MTJ memory device. An MRAM array comprises a plurality of MTJ memory devices, and the binary logic data of entire MRAM array is typically read by applying a sensing current flowing perpendicularly through selected MTJ memory device. Switches, typically transistors like MOSFETs, are implemented in conventional methods to block the stray read current path. In addition, the switches are also used to avoid write disturbance.
Some MRAM circuit arrays employ one transistor for each bit (each memory cell or bit is thus noted as 1T1R) to control the read current and block the sneak current paths. This type of MRAM array typically offers fast memory speeds, such as used in L1 cache memory. However, the one-to-one ratio of switches to MTJ stacks in such arrays limits array density. Other array layouts employ two transistors for each MTJ stack (noted as 2T1R). However, although this design provides very fast speeds, such designs provide insufficient cell density due to the relatively large area occupied by the switching devices in relation to MTJ stacks. Still other array layouts employ one transistor for two or more MTJ stacks (noted as 1T2R, or 1TnR for "n" number of MTJ stacks per switching device). However, while these layouts provide for increased MRAM cell density per chip real estate, they typically lack the desired fast access speeds demanded in today's market. As can be seen, available MRAM array layouts result in a give-and-take for various applications. Accordingly, a new type of array layout for memory cell arrays such as MRAM devices is needed.

Taiwan Semiconductor Manufacturing Company, Ltd.


A diffuser (30) for a centrifugal compressor (60) having a flow slot (34) formed between the leading edge portion (36) of a diffuser vane (32) and an adjoining diffuser wall (70) for the passage of working fluid (67) over the vane from the pressure side ((40) to the suction side (42) of the vane. The portion (38) of the working fluid passing over the vane is injected into the flow boundary region (43), thereby minimizing the growth of a flow separation zone (58) along the suction side.

Centrifugal compressors are known to utilize diffusers for converting a portion of the kinetic energy of a working fluid leaving a compressor wheel into static pressure by slowing the flow velocity of the working fluid through an expanding flow volume region. Diffusers may incorporate airfoils, commonly called vanes, for directing the working fluid through the expanding volume to enhance this process, with each vane having a pressure side and a suction side relative to an angle of attack of the incoming working fluid. FIG. 1 illustrates how a prior art diffuser 10 may develop a large flow separation zone 12 on the suction side 14 of a diffuser vane 16 under certain conditions. The flow separation zone 12 is essentially a flow boundary layer that has a lower velocity than the remainder of the flow and therefore hinders the overall fluid flow rate. The flow separation zone 12 creates a distorted exit flow 18 from the compressor, reducing the efficiency of the compressor and potentially leading to surge and stall of the compressor, with resultant damage to the compressor and/or a downstream turbocharged engine. For the embodiment of a compressor used as a turbocharger for the diesel engine of a railroad locomotive, the compressor is most vulnerable to such surge and stall events when the locomotive is operating at high altitude, low ambient temperature, and high manifold air temperature; for example when just exiting a high altitude tunnel.
As illustrated in FIG. 1, the conventional wisdom for the design of compressor diffuser vanes 16 is to provide uninterrupted surfaces 20 from the leading edge 22 to the trailing edge 24 of the vanes to maximize the surface area of the vane exposed to the differential pressure between the suction side 14 and the pressure side 26. The position and angle of the vane is chosen as a compromise between avoiding stalling of the flow and maintaining efficient pressure recovery for the angles of attack of the various incoming air flow streams that were anticipated to impinge upon the vane.


A method for measuring tubular anatomical structures, for example lung airways, comprises isolating by at least one segmentation process a given tubular anatomical structure of interest and measuring at least one attribute of the structure of interest. A system for measuring lung airways using acquired image data is provided. The system comprises an imaging device for acquiring the image data and an image processing device coupled to the imaging device. The imaging processing device is configured for isolating by at least one segmentation process a given airway of interest, fitting an inner ellipse to an inner boundary of the given airway and an outer ellipse to an outer boundary of the airway structure using statistical techniques at a given point in the airway, and further configured for generating measurements of the given airway using the inner and outer ellipses.

This invention relates to a method and system for processing medical image data to aid in the detection and diagnosis of disease, and more particularly, to a method and system for detecting lung disease in medical images obtained from a x-ray computed tomography (CT) system.
A x-ray chest radiograph system is the more commonly used diagnostic tool useful for the purpose of detecting lung disease in humans. Lung disease such as bronchitis, emphesema and lung cancer are also detectable in chest radiographs and CT. However, CT systems generally provide over 80 separate images for a single CT scan thereby providing a considerable amount of information to a radiologist for use in interpreting the images and detecting suspect regions that may indicate disease.
Suspect regions are defined as those regions a trained radiologist would recommend following through subsequent diagnostic imaging, biopsy, functional lung testing, or other methods. The considerable volume of data presented by a single CT scan presents a time-consuming process for radiologists. Conventional lung cancer screening generally involves a manual interpretation of the 80 or more images by the radiologist. Fatigue is therefore a significant factor affecting sensitivity and specificity of the human reading. In other diseases, such as emphysema, it is difficult for a radiologist to classify the extent of disease progression by only looking at the CT images.
Chronic Obstructive Pulmonary Disease (COPD) is identified based on symptoms including coughing, wheezing, and shortness of breath (dyspnea). COPD includes a number of respiratory diseases, the most prominent of which are emphysema and chronic bronchitis. COPD affects large airways, small airways and parenchyma in patients. Diseases are typically caused by smoking and air pollution, and are linked to genetic predisposition causing alpha-anti-elastase deficiency.
Emphysema, or airspace destruction, is the most prominent feature of parenchymal change in COPD patients. Emphysema is the result of the loss of elastic recoil of lung tissue. There are four types of emphysema: centrilobular, panlobular or panacinar, distal acinar or paraseptal, and irregular. The first two types contribute to the majority of emphysematous COPD. The classification is based on the anatomical distribution of airspace destruction within a lobule, which is a cluster of acini. Currently, emphysema can be classified only through post mortem examination. Emphysema is typically diagnosed by gross physiological responses, medical imaging and post mortem anatomical inspection.
Chronic bronchitis causes anatomical airway narrowing, which reduces lung function. Airway modification typically begins with irritation from smoking and/or air pollution and can be caused/exacerbated by biological infection. Chronic bronchitis is clinically defined by persistent cough and sputum production for more than 3 months in a 2-year period. Chronic bronchitis can be classified into simple chronic bronchitis, obstructive bronchitis and chronic asthmatic bronchitis. In simple chronic bronchitis, no sputum is produced. Chronic asthmatic bronchitis involves hyperreactivity of the airways. In obstructive chronic bronchitis, airflow is hindered by airway modification. Chronic bronchitis is currently staged using Reid index post mortem. High resolution CT may enable scoring chronic bronchitis using Reid index in vivo.
Bronchial wall cross-sectional area is a key indicator in the diagnosis and staging of COPD. Measuring airway cross-sectional area from medical images (for instance CT) will enable physicians to track disease progression and accelerate clinical trials. Bronchial passages appear in CT images as small dark regions surrounded by bright regions. The dark area is the lumen while the bright area is composed of both the bronchial wall and any attaching or adjacent blood vessels. In measuring the airway wall cross-sectional area, one must not incorporate the thickness of the attaching or adjacent blood vessels.
If the airway is isolated, with no attaching or adjacent blood vessels, the airway can be measured using a variety of standard image processing and computer vision techniques. When the imaged airway has attached of adjacent blood vessels, an example of traditional approach has been to manually select a ray from the center of the lumen that passes through the airway wall at a point where the are no blood vessels. The measure of the wall thickness along this single ray is used to estimate the airway cross-sectional area.
What is needed is a robust method and system for measuring airways to enable diagnosis and tracking of various diseases of COPD.

Method and system for airway measurement


A method and an apparatus for driving multi-segment display device are described. According to the present invention, problems of driving the electrode wire activation mode of the conventional liquid crystal display are solved by the driving waveforms. The driving waveforms of non-display area are in the OFF mode, where the non-display area has pixels in the OFF mode, driving electrode wires and background area. Problems of driving voltage wire activation mode are decreased, cost is lowered, and processing is simplified, so that every pixel of the display device will be controlled precisely.

1. Field of the Invention
The present invention relates to a driving method and a driving apparatus, and in particular to a method and an apparatus for driving multi-segment display device.
2. Description of Related Art
To drive multi-segment display devices used to illustrate characters (e.g. numeric or alphabetical), a clock signal having continuous square wave and a control continuous wave as an input signal is conventionally used to determine whether a "ON" or "OFF" mode is used. With a driving circuit, the input signal is converted into a continuous square wave having two polarities. Amplitudes of the continuous square wave are used to determine whether the "ON" or "OFF" modes of corresponding pixels are used. Because many display media well known in the art such as liquid crystal (LC) display medium or non-LC display medium have different characteristics, it therefore arises an issue to drive the pixels into "ON" mode for multi-segment display devices accompanying with also driving the corresponding electrically wires into "ON" mode by the conventional segment driving.
In addition, when the multi-segment display devices are assembled, segment electrodes corresponding to the segments of upper substrates and lower substrates need to be aligned accurately. This results in higher costs and low production yield. To overcome the above-mentioned disadvantages, it is usually improved to avoid the driving electrical wires in the process by, for instance, increasing the light-absorbing layer upon the electrical wires or avoiding the electrical wires with respect to different display media such as electrochromic display (ECD) which disposes the display medium in the right positions to avoid the electrical wires. However, it is not a direct means to solve the electrical wires to be mistakenly driven into the "ON" mode.
FIG. 1A is a conventional driving circuit for a display device. Referring to FIG. 1, each pixel of the display device corresponds to a set of input signals and a conversion circuit 16. The conventional driving circuit includes a control input terminal 12 and an input signal terminal 10. A clock signal is supplied to the control input terminal 12 of the conventional driving circuit, and the frequency of the clock signal is the AC signal having two polarities supplied to corresponding pixel of the display device. A logic control signal is supplied to the input signal terminal 16 and used to switch between the "ON" or "OFF" modes of the corresponding pixels. Also, both the control input terminal 12 and the input signal terminal 16 are coupled to an exclusive OR (XOR) gate 14. Then, the control input terminal 12 and the input signal terminal 16 are connected to an amplifier or a signal scaler so that logic output levels are converted to a plurality of voltages. The voltages include a segment voltage 18 and a common voltage 20, and are used to drive display medium 22 of the display devices.
FIG. 1B shows segment driving waveforms of the segment voltages of the conventional driving circuit. Referring to FIG. 1B, a waveform of signal supplied to the input signal terminal 10 is indicated by reference numeral 100, and a waveform of signal supplied to the control input terminal 12 is indicated by reference numeral 102. A waveform of signal having the common voltage 20 is indicated by reference numeral 104. A waveform of signal having the segment voltage 18 is indicated by reference numeral 106. A waveform of a signal having a voltage drop of the common voltage 20 and the segment voltage 18 is indicated by reference numeral 108. The signal having the waveform 108 has a voltage to activate the display medium. The waveform of the signal supplied to the segment electrodes and the common electrodes has amplitudes of F, and the signal has one polarity. However, the segment electrodes and the common electrodes are likely positioned opposite to the backgrounds of display device. Electrical fields generated by the signals having the waveform 108 have impact on the modes of display medium. Thus, the electrical fields are higher than threshold value of the display medium so that modes of display medium are changed.
Reference is made to FIG. 2. FIG. 2 schematically illustrates a driving circuit for the display device in the prior art. The "ON" mode is driven by a driving common voltage 112 and a driving segment voltage 114. The "OFF" mode is driven by a driving common voltage 112 and a driving segment voltage 28. Referring to FIG. 2, a pixel with the "ON" mode and a pixel with the "OFF" mode are shown (FIG. 2 may include more pixels). The "ON" mode is indicated by a display medium active mode 24, and the "OFF" mode is indicated by a display medium inactive mode 26. However, pixels of non-display area should not be lit (even the background light should not be lit), and pixels of display area should normally be lit. If the clock signal having the waveforms as shown in FIG. 1B is applied, then a segment driving voltage VLS, ON=V(clk,−)−Vcg of the ON mode is generated. Besides, a segment driving voltage VLS,OFF=V(clk,+)−Vcg of the OFF mode is generated. The voltage V(clk,+) is the segment electrode voltage of the OFF mode, and the voltage V(clk,−) is the segment electrode voltage of the ON mode. The voltage Vcg is a common background voltage. In the prior art, the common background voltage or the segment background voltage may be floating as a result of uncertain voltage. That is, the common background or segment background may be lit or may not be lit. (It depends on the display mediums).

Method and apparatus for driving multi-segment display device

Industrial Technology Research Institute


The present invention provides a fixing device and a digital photocopier which can shorten the time from an instruction of starting image formation to end of fixing. The fixing device is provided in a cylinder made of metal and having a small thickness, and includes a magnetic excitation coil. When the power source is turned on, all the electric power defined by subtracting an electric power amount consumed by components other than the fixing device is supplied to the magnetic excitation coil to perform heating. As the structural components of the photocopier and auxiliary devices added to the photocopier operate, the electric power defined by subtracting, from the maximum input electric power, the electric power consumed by the structural components of the photocopier and the auxiliary devices is supplied to perform heating. In this manner, the heat roller of the fixing device is heated, in a short time, to a temperature which enables fixing, so that the time required for first copying can be shortened.

1. Field of the Invention
The present invention relates to an image forming apparatus such as an electrostatic photocopier, a laser printer, or the like in which a toner image is fixed to a fixing material.
2. Description of the Related Art
In a fixing device incorporated in a photocopier using an electrophotographic process, a developer which is toner formed on a fixing material is heated and melted to fix the toner to the fixing material. A method of using radiated heat based on a halogen lamp (a filament lamp) is widely used as a method for heating toner usable for a fixing device.
With respect to the method of using a halogen lamp as a heat source, a structure is widely used, i.e., paired rollers are provided such that a predetermined pressure can be applied to the fixing material and toner, at least one of the paired rollers is used as a hollow column, and a halogen lamp arranged in a column is arranged in the inner hollow space. In this structure, the roller provided with a halogen lamp forms an acting part (nip) at a position where the roller contacts with the other roller, so that pressure and heat are applied to a fixing material and toner guided to the nip. That is, the fixing material, i.e., a paper sheet is passed through a fixing point which is a press contact part between a heat roller provided with a lamp and a press roller which rotates as a slave to the heat roller, and thus, toner on the paper sheet is melted and fixed to the paper sheet.
In the fixing device using a halogen lamp, light and heat from the halogen lamp is radiated in all directions to the entire circumference of the heat roller. In this case, it is known that the thermal conversion efficiency is 60 to 70%, the thermal efficiency is low, the power consumption is large, and the warm-up time is long, in consideration of the loss at the time when light is converted into heat, the efficiency at which air in the roller is warmed to transfer heat to the holler, and the like.
Hence, as a heat source for a heat roller, an induction heating method has been practiced, in which a heat coil is provided inside a heat roller, and a high-frequency current is supplied to the coil, so that heating is carried out by induction heating.
For example, Japanese Patent Application KOKAI Publication No. 59-33476 discloses a technique in which a roller having a thin metal layer on the outer circumference of ceramics cylinder is comprised and an induction current is passed through the thin metal layer of the roller with use of a conductive coil to achieve heating.
Japanese Patent Application KOKAI Publication No. 258586 discloses a method which uses a heat generation member in which a coil is wound around a core provided along the rotation axis of a fixing roller, and which achieves heating by flowing eddy current through the fixing roller.
Since the induction heating heats a roller by eddy current obtained as a result of flowing current through a coil, a large electric power is required to heat a heat roller to a predetermined temperature in a short time period.
However, a fixing device used in a photocopier has an upper limit to the power which can be consumed singly by only the fixing device, and electric power is also consumed by a large number of components constructing the photocopier. It is therefore known that a large electric power cannot be continuously supplied only to the fixing device.
Therefore, if a large electric power cannot be distributed to heating of the heat roller of the fixing device, the warm-up time of the photocopier is elongated, so that the time required for obtaining a copy is also elongated. If priority is given to warm-up of the photocopier, the fixing rate is insufficient in some cases. Meanwhile, in a heat roller having a structure in which the heat roller is formed into a thin cylinder made of metal and a coil is provided inside the cylinder along the axial direction of the cylinder, an irregular temperature distribution is caused on the outer circumferential surface of the roller. Therefore, the heat roller must be rotated in contact with the press roller when the temperature of the heat roller increases, to make uniform the temperature of the outer circumferential surface of the heat roller. This lengthens not only the warm-up time but also the electric power required for heating.

Image forming apparatus and fixing device