A magnetic field sensing structure for sensing magnetic field changes provided therein having a pair of pole structures with a gap space between them that each include permeable material and end in substantially a common surface. A plurality of field sensing structures is positioned successively in the gap space to be supported between the pole structures with each having an end thereof substantially the common surface. These sensing structures are formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic, electrically conductive layer positioned between them. They are electrically connected to one another adjacent the common surface, and may be electrically connected to one of the pole structures.

The present invention relates to ferromagnetic thin-film structures exhibiting relatively large magnetoresistive characteristics and, more particularly, to such structures used to sense externally applied magnetic fields.
Many kinds of electronic systems make use of magnetic devices including both digital systems, such as memories, and analog systems such as field sensors. Magnetometers and other magnetic field sensing devices are used extensively in many kinds of systems including magnetic disk memories and magnetic tape storage systems of various kinds. Such devices provide output signals representing the magnetic field sensed thereby in a variety of situations.
Such sensors can often be advantageously fabricated using ferromagnetic thin-film materials, and are often based on magnetoresistive sensing of magnetic conditions therein. These devices may be provided on a surface of a monolithic integrated circuit chip to provide convenient electrical connections between the device and the operating circuitry therefor in the integrated circuit chip. Otherwise, they may be mounted on another structure conveniently close to the sensor for this purpose.
Ferromagnetic thin-film sensors can be made very small when so constructed. Such sensors are often provided in the form of an intermediate separating material having two major surfaces on each of which an anisotropic ferromagnetic thin-film is provided. In such "sandwich" structures, reducing the thickness of the ferromagnetic thin-films in the intermediate layer has been shown to lead to a "giant magnetoresistive effect" being present. This effect can be enhanced by having additional alternating ones of such films and layers, i.e. superlattices. This effect can yield a magnetoresistive response which can be in the range of up to an order of magnitude greater than that due to the well-known anisotropic magnetoresistive response.
In the ordinary anisotropic magnetoresistive response in ferromagnetic thin-films, varying differences between the direction of the magnetization vector in such a thin-film and the direction of a sensing current passed through that film in turn lead to varying differences in the effective electrical resistance of the film in the direction of the current. The maximum electrical resistance occurs when the magnetization vector in the film and the current direction are parallel to one another, while the minimum resistance occurs when they are perpendicular to one another. The total electrical resistance of such a magnetoresistive ferromagnetic thin-film exhibiting this response can be shown to be given by a constant value, representing the minimum resistance present, plus an additional value depending on the angle between the current direction in the film and the magnetization vector therein. This additional resistance follows a square of the cosine of that angle.
As a result, external magnetic fields supplied for operating a film sensor of this sort can be used to vary the angle of the magnetization vector in such a film portion with respect to the easy axis of that film portion. This axis exists in the film because of an anisotropy present therein typically resulting from depositing the film in the presence of an externally supplied magnetic field during deposition of the film that is oriented in the plane of the film along the direction desired for the easy axis in the resulting film. During subsequent operation of a sensing device using this resulting film, such externally supplied magnetic fields for operating the film sensor can vary the magnetization vector angle to such an extent as to cause switching of that film's magnetization vector between two stable states which occur as magnetizations oriented in opposite directions along the established easy axis. The state of the magnetization vector in such a film portion can be measured, or sensed, by the change in resistance encountered by a current directed through this film portion.
In contrast to this arrangement, resistance in the plane of either of the ferromagnetic thin-films in the "sandwich" structure is isotropic with respect to the giant magnetoresistive effect rather than depending on the direction of a sensing current therethrough as for the anisotropic magnetoresistive effect. The giant magnetoresistive effect has a magnetization dependent component to resistance that varies as the cosine of the angle between the magnetizations in the two ferromagnetic thin-films on either side of the intermediate layer. In the giant magnetoresistive effect, the electrical resistance through the "sandwich" or superlattice is lower if the magnetizations in the two separated ferromagnetic thin-films are parallel than it is if these magnetizations are antiparallel, i.e. oriented in opposing directions. Further, the anisotropic magnetoresistive effect in very thin films is considerably reduced from the bulk values therefor in thicker films due to surface scattering, whereas very thin films are a fundamental requirement to obtain a significant giant magnetoresistive effect. The total electrical resistance in such a magnetoresistive ferromagnetic thin-film "sandwich" structure can be shown again to be given by a constant value, representing the minimum resistance present, plus an additional value depending on the angle between the magnetization vectors and the two films as indicated above.
One common magnetic field sensing situation is the sensing of magnetization changes along a data recording track selected from many such tracks in the magnetic media of a magnetic data storage system. As these tracks are made narrower and narrower to permit increases in the data density in the magnetic media, inductive sensing of the magnetization changes along any of those tracks becomes less feasible. The smaller magnetization volumes lead to smaller outputs from an inductive sensor, and there is a limit to the number of turns in the coil used in such a sensor which can be provided to increase the output signal. Even in thin-film versions thereof, such inductive sensing structures remain relatively thick which becomes a problem as the tracks are made more narrow. Thus, sensing of the magnetization changes along the track using thin-film magnetoresistive sensors has become attractive.
Such magnetoresistive sensors for detecting magnetization changes along a track in the magnetic media are typically formed with the magnetoresistive sensor film in a rectangular shape, and sensors based on such films in initial designs therefor had such a sensing film positioned between a pair of highly permeable magnetic material shielding poles with a long side of the film's rectangular shape located adjacent the magnetic media to result in what is oftentimes termed a horizontal sensor. More recently, such magnetoresistive sensors have had an alternative construction with such sensing films positioned between the poles with the short side of the rectangle adjacent the magnetic media to form what is often termed a vertical sensor or an "end-on" sensor. These kinds of sensors were both initially based on use of the anisotropic magnetoresistive effect in the sensing films. This effect gives a maximum change in magnetoresistance due to the sensed magnetic fields on the order of 2.5% at room temperature.
As data tracks in the magnetic media grow ever thinner coupled with use of higher densities of magnetization direction changes therealong, the need for a more efficient converter of such magnetization changes in the magnetic medium into a sufficiently large current or voltage output signal becomes greater. Hence, horizontal and vertical magnetoresistive sensors based on the "giant magnetoresistive effect" were introduced because of the greater changes in resistance possible from corresponding changes in externally applied magnetic fields. A vertical or end-on magnetoresistive sensor based on the "giant magnetoresistive effect" is typically formed with a nonmagnetic intermediate conductive metal layer having ferromagnetic layers on opposite sides of the major surfaces thereof with all layers in corresponding rectangular shapes. As before, such a vertical sensor is mounted typically between a pair of ferromagnetic material shielding poles in a narrow gap provided therebetween so that a short side edge of the rectangular film sensor is positioned adjacent the magnetic media approximately in a plane with the sides of the poles also being positioned adjacent the magnetic media with the resultant surface in this plane forming the air bearing surface. Thus, the long sides of the sensor extend inward into the gap between the poles and away from the magnetic media.
The magnitudes of the changes in voltage across the length of the vertical sensing "sandwich" structure due to magnetization transitions in the magnetic media passing thereby, leading to voltage pulses that combine to form the sensor output or "read" signal, will be determined by a) the magnitude of the sense current provided therethrough along this length which in turn results in a sense field, H.sub.sn, across the width of the sensing films, and b) the magnitudes of the angular changes in the directions of the magnetizations of the two ferromagnetic layers for corresponding changes in the applied external field due to changing magnetization directions in the magnetic media passing by the sensor, i.e. the signal field or H.sub.sg. This signal field is directed to a significant extent along the length of the vertical sensing "sandwich" because of the permeabilities and the geometries of the magnetic materials present.
The increases in magnetic flux along the length of the sensing structure, due to the corresponding rotating magnetizations of the ferromagnetic layers in response to changing applied external fields because of magnetization transistions in the magnetic media passing thereby, is proportional to the total film magnetization multiplied by 47.pi. and further multiplied by the sine of the angle between the direction of the total magnetization and an axis parallel to the surface of the magnetic media across the width of the sensing films termed the "x" axis. Hence, the degree of angular change in the directions of the magnetizations of the ferromagnetic layers in response to an externally applied field can be characterized as an effective permeability in the sensing structure in view of its relation to the increase in lengthwise flux in response to an externally applied field. This effective permeability characterizes the sensing film in the sensing structure, and, as indicated, is proportional to the sine of the just described angle which can be designated .theta..
An approximate analysis for determining the value of .theta. can be found from thermodynamic considerations through finding the total magnetic energy present in such a vertical sensor and differentiating the same with respect to .theta. followed by setting the result equal to zero to determine the value of .theta. yielding a minimum for that energy. This is equivalent to setting equal to zero the magnetic torque on the magnetization vectors in the ferromagnetic films or layers which can be written directly assuming that the magnetization of each of the ferromagnetic layers is in the plane of the layer due to the thinness of such layers as films, and assuming that the rotations of the magnetization in each of those layers are equal in magnitude but opposite in direction because of symmetry between the layers. Further assumed is that, in each of the ferromagnetic layers, the magnetizations at the long sides of those layers in the vertical sensing films are pinned parallel to those sides due to demagnetization considerations. In these circumstances, the magnetization effect of one ferromagnetic layer on the other can be found from a line integral of the total magnetic field around the sensing "sandwich" structure intermediate layer, i.e. primarily across the width of the sensor, so that the magnetic torque equation can be written as ##EQU1## Here, the quantity A is the exchange constant, M.sub.s is the saturation magnetization, and .theta. is the angle of the film magnetization away from the fabricated easy axis which is across the width of that sensing film in the direction of the x axis taken as having its zero datum at the center of the sensor width.
The factor S' is the effective separation of the two ferromagnetic layers in the sensing structure "sandwich". The effective separation is somewhat greater than the actual physical separation of those layers, i.e. the thickness of the intermediate layer, because of the turning of the magnetic flux in one ferromagnetic layer toward the other at the long edges of the vertical sensor so as to have that field pass through the separation to the other. The effective separation is determined from ##EQU2## In addition, H.sub.sg is the externally applied signal field due to the changing magnetizations in the magnetic media passing by the sensor and H.sub.sn is the sense field due to the sense current as indicated above. H.sub.b is the bias field generated by the provision of a bias current in a current strap near the sensing structure that is used to operate the vertical sensor in a more linear portion of its characteristic. H.sub.k is the anisotropy field.
The first term on the right-hand side of the equal sign in the magnetic torque equation is an exchange term representing the resulting torque on the rotating magnetization. The second term is the torque due to the signal field generated by the changing magnetizations in the magnetic media moving past the vertical sensing structure, and the torque due to the bias field provided by a current in the bias current strap. The third term is the torque due to demagnetizing effects of the fringing fields between the ferromagnetic layers. The fourth term is the torque due to the sense field resulting from the sense current passed through the vertical sensing structure in a direction parallel to the long sides thereof. Finally, the last term is the torque due to the anisotropy described above.
This anisotropy field has a value with respect to an effective easy axis which can be arranged during fabrication of the ferromagnetic films to occur along one of many possible directions in these films. As a result, the algebraic sign of the term in the above equation containing this factor will vary depending on where this axis is located in the films actually made, and will not always be negative as shown in the above torque equation which is appropriate, as an example, for the easy axis extending across the width of the vertical sensing structure.
Some easy axis directions in the ferromagnetic films have been found to be better than others in providing a larger output signal for a given externally applied field input. One such arrangement is effectively having the easy axis extend along the length of the vertical sensing structure even though the ferromagnetic films were fabricated with an externally applied field directed along the width of the structure which would typically result in the easy axis being along the structure width or "x" axis. This moving of the effective easy axis from across the width of the vertical sensing structure to along its length comes about due to shape anisotropy effects because of its rectangular shape, exchange coupling and surface roughness coupling ("orange-peel coupling") which act to provide the effective easy axis along the length of the vertical sensor. Changing the thickness of the film will change the surface roughness coupling to a greater degree than it will change the shape anisotropy to provide some control of the result, and the composition of the ferromagnetic layers can be changed to lower the anisotropy field across the sensing structure width to provide further control. The magnitude of the resulting lengthwise effective anisotropy field is significantly less than that which would be provided if the fabricated easy axis intentionally provided during fabrication along the length of the vertical sensing structure.
The value of having an effective anisotropy field of a reduced value directed along the length of the vertical sensor can be seen from a further approximation for the magnetic torque set out in the above torque equation by neglecting the curling of the magnetic field at the long edges of the vertical sensor and neglecting the demagnetizing fields. As a result, the equation represents approximately the sensing situation occurring near the center of the width of the vertical sensor relatively far from the edges, and represents that as though this condition applied over the entire width of the sensor. In addition, the bias field can be ignored for this purpose. The result of such an approximation is EQU M.sub.s H.sub.sg cos .theta.-M.sub.s H.sub.sn sin .theta..+-.M.sub.s H.sub.k sin .theta.cos .theta.=0.
An alternative algebraic sign indication, .+-., has been placed ahead of the anisotropy term to indicate that the anisotropy field term leads to opposite polarity torques depending on whether the easy axis with respect to which the field occurs is, for two possibilities, either across the width of the sensing structure or along the length of the sensing structure. As indicated, the first magnetic torque equation above was written assuming that the effective direction of the easy axis was across the sensor.
Since the response of the sensing structure to an externally applied signal field, i.e. the effective permeability, as indicated above is proportional to the sine of .theta., this last equation can be solved for the sine of .theta. to get an expression related to the effective permeability or ##EQU3## In this last solution, the precedence of the denominator term H.sub.k with a plus sign corresponds to the easy access being across the width of the stripe. In this circumstance, one can see that an increase in the sense field H.sub.sn will in this circumstance only serve to reduce the effective permeability and hence provide little aid in increasing the output signal in response to a externally applied signal field H.sub.sg.
In the opposite situation in which a minus sign precedes the anisotropy field H.sub.k in the last equation for a lengthwise easy axis, however, a relatively high effective permeability can be maintained even with large sense fields through adjusting the anisotropy field value to be relatively near in magnitude to the desired sense field magnitude. Thus, if the difference in magnitudes between sense field H.sub.sn, acting across the width of the vertical sensor in response to the sense current traversing the length of that sensor, and anisotropy field H.sub.k is kept small through adjustment of the anisotropy field value by appropriate adjustment of the combined exchange coupling, "orange-peel" coupling, and shape anisotropies, a relatively large effective permeability can be provided in the vertical sensing structure.
As indicated above, the resistance change along the length of the vertical sensor is proportional to the sign of the angle between the magnetizations in the two ferromagnetic layers on either side of the intermediate layer. The output signal is formed from the voltage changes occurring across the length of the sensing structure for a fixed sense current therethrough because of the magnetization direction transitions in the magnetic media passing by the sensor that act to change the angle between the magnetization vectors in the two ferromagnetic layers, an angular change which is related to the effective permeability as described above. Thus, the magnitude of the output signal will depend on the amount of resistive change in the sensor which in turn will depend on the fraction of the length of that sensor which is penetrated by the externally applied signal field H.sub.sg causing such angular changes.
The degree that the externally applied magnetic field is shunted away from the vertical sensor by the high permeability shielding poles on either side thereof in a typical "read" sensing head determines the effective fraction of, or the effective length in, the vertical sensing structure that is subject to this externally applied field. The effective signal field in the vertical sensing structure can be found from an Ampere's law line integral through the entire field over a closed path through the length of the vertical sensing structure and across the gaps and then through the length of a shielding pole positioned adjacent to the vertical sensor across the gap therefrom. Such a procedure can, through approximations, be used to arrive at a nonuniform transmission line model equation for the average signal flux distribution in the vertical sensing structure due to a magnetization transition in the magnetic media moving pass the sensor which is modeled as a flux source. The average signal flux in the vertical sensing structure is represented by M.sub.av which is averaged across the width of the sensor to provide the average signal flux at any point along the length of that sensor. The result is ##EQU4## Here, T again is the thickness of a magnetic layer, .mu..sub.r is the average effective permeability, G.sub.ss (z) is the gap distance between the vertical sensing structure and one of the shielding poles, and M.sub.b is the bias flux resulting from a bias current in the bias strap provided adjacent to the vertical sensing structure. The variable "z" is the directional coordinate along the length of the sensor intersecting the "x" axis at its zero datum.
An analytical solution can be obtained to this equation with the simplifying assumption that the gap distance between the vertical sensor and the shielding poles on either side thereof is constant with a value of G.sub.ss-c giving a total gap for the gaps on both sides of the sensor of G=2G.sub.ss-c. Although this is not often the case in practice, such an approximation allows obtaining a representative distance expression for the length of the vertical sensor which is effectively penetrated by the flux due to the externally applied signal field changes caused by the magnetization transitions in the magnetic media passing by the end of the vertical sensing structure. Such an approximation, along with ignoring the bias field magnetization in view of interest being only in the externally applied signal field decay with length in the sensing structure, yields ##EQU5##
This equation has an exponential solution for M.sub.av involving the base e raised to an exponent involving -z divided by a characteristic length. This characteristic length is found to be ##EQU6## However, there are two shielding poles present in practice separated from the vertical sensor by two gaps, but also there are present two magnetic layers in the "sandwich" structure of that sensor. Thus, this characteristic length in practice will remain the same as that just given to thereby provide an effective decay length, d, in the vertical sensing structure measured from the air bearing surface at which the externally applied signal field is down by 1/e from its initial value, this length being ##EQU7##
Thus, the output voltage signal will depend on the effective permeability in the vertical sensor, the thickness of the magnetic layers therein and the length of the gap. There is a desire to increase the magnitude of the output signal for a given value of externally applied signal H.sub.sg provided by magnetization transitions in the magnetic media passing by the end of the vertical sensor, as such externally applied signals tend to become smaller as less and less magnetic material is provided for each bit in each data track because of a desire to increase the density of storage in the magnetic media. Thus, there is desired a sensor configuration which can yield an increased output signal for a given externally applied input signal without resulting in widening the vertical sensor which would limit the narrowness permitted for tracks in the magnetic media.

Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surface


A support device for supporting a light fixture includes an anchor portion for anchoring the light fixture to a ceiling location, a wing arrangement coupled to the anchor portion, the wing arrangement including a central base portion and a pair of wing portions extending outwardly therefrom, each wing portion including a body having a distal edge region and a proximal flange portion joined to the central base portion, a first passage in each body and a second passage in each proximal flange, the first and second passages to form a path to receive one or more cable members to be suspended therefrom to support a light fixture thereon.

1. Field of the Invention
The present invention relates to lighting fixtures.
2. Description of the Related Art
Light fixtures are commonly suspended from ceiling locations. It is often awkward to adjust the position of such light fixtures.
It would be desirable to provide a novel approach to suspending a light fixture.


The bypass opening of the tie plate of a fuel assembly of a nuclear reactor is provided with a flow restricting or check valve such that flow during normal operation upwardly through the tie plate and bypass opening is maintained. In the event of a loss of coolant accident, and degradation of a core spray sparger system, backflow leakage through the tie plate is minimized or eliminated by the valves, enabling the core spray sparger system to flood the core about the fuel assemblies and provide spillover coolant into the open top ends of the fuel assemblies. Additionally, because the fuel assemblies change in length over time, a uniform coolant flow distribution into the fuel assemblies upon loss of coolant accident is achieved by providing metering holes through the channels whereby each channel receives substantially the same flow of coolant from the flooded core.

In a typical boiling water nuclear reactor, a reactor core includes a core plate supporting a plurality of fuel assemblies within a core shroud. The core shroud provides a barrier to separate upward coolant flow through the core from the downward flow in an annulus surrounding the core within the reactor vessel. The fuel assemblies each comprise a plurality of fuel rods carried on a lower tie plate and supported within a fuel channel. The lower tie plate is received in an opening through the core plate and has an inlet at its lower end for flowing coolant upwardly through the core plate and tie plate into and about the fuel rods within the fuel channel. A bypass flow through the tie plate is also provided for flowing coolant between the channels. Consequently, there is generally an upward flow of coolant from below the reactor core through the tie plate and into and about the fuel assemblies during normal operation of the reactor.
In the event of a drop of coolant level below the top of the active fuel assemblies, or a major loss of coolant in the event of a large recirculation line break that drains the annulus, a core spray sparging system is used to distribute coolant to each fuel assembly to prevent fuel damage. That is, the core spray sparging system prevents fuel rod cladding damage in the event the core becomes uncovered due to loss of coolant. The sparging system includes nozzles mounted in a sparger ring located inside the reactor vessel above the fuel assemblies for directing coolant as a spray over the area of the fuel assemblies. The core spray system also includes pumps, valving, piping and instrumentation necessary to provide coolant to the reactor.
Core spray sparging systems, however, may degrade and break down, resulting in a loss of ability to provide uniform coolant flow across the core. While core spray spargers can be serviced during refueling operations and parts replaced, there is considerable expense involved. Consequently, in the event of a drop of coolant level, for example, due to a recirculation line break, the core spray sparger system may not have the remaining capacity due to degradation or breakdown to achieve a minimum coolant flow to each fuel channel and prevent fuel cladding damage. This is a result of the inability of the core spray spargers when degraded or broken down to provide distribution of sufficient coolant to make up for the flow of coolant out of the core due to backflow leakage through the tie plates and the core plate. For example, upon a large recirculation line break, coolant flows downwardly through the fuel channels and from between the fuel channels through various leakage paths including the lower tie plate bypass holes through the core plate. These backflow leakage paths are designed into the reactor to approximate 10% of normal operating core flow in order to maintain sub-cooling of the water between the fuel channels. That is, approximately 90% of the backflow leakage is through the lower tie plate bypass holes and finger springs mounting the channel. Stated differently, the lower tie plate holes are sized to ensure that 10% of the flow is bypassed in normal operation when flow is moving upwardly through the core plate. Following a large recirculation line break, the flow from between the channels reverses and flows through the bypass holes into the lower tie plate and through the core plate. It will be appreciated that in the event of a loss of coolant flow due to a line break, and a degraded or broken down core sparger system, the core sparger may have insufficient capability to provide adequate coolant distribution to the fuel assemblies to prevent fuel cladding damage.

Nuclear reactor core flooding by control of shroud leakage and fuel channel spillover


A self contained data medium is provided with an apparatus for generating a decrypting key for decrypting stored data. Frames of encrypted data are stored on the data medium such as a video or audio disk. Each frame of data includes a header which has a frame identification number. A reader reads each frame of data including the header with the frame identification number. The reader transmits the frame number to a transponder attached to the data medium. The transponder includes a decryption engine which calculates a decryption key from the frame number and a secret deciphering key stored in the transponder. The transponder transmits the decryption key to the reader which uses the decryption key to decrypt the frame of data. The system discourages both home copying and commercial piracy of the underlying program material.

The present invention relates to a system for maintaining data stored on a data medium secure against unauthorized copying and use. Specifically, an encrypted data medium is provided which includes a self contained apparatus for generating a decrypting key for decrypting the stored data from information read from the data medium.
The explosion of digital data technology has produced a demand for mass marketed data media in the form of optical disks and magnetic tapes which include program information other than computer software stored as digital data. These mass produced memory devices may contain audio or video records which are often used on equipment such as CD players and audio tape players which are not equipped with any type of security device which will prevent unauthorized copying. The ability to prevent the manufacture and use of illicit copies of these recordings has been a serious problem for the legitimate owners of the underlying copyrighted works. The source of illicit copying is from both home copying and commercial piracy. The availability of home recording devices permits on a very limited scale the manufacture of copies which diminish the market for the legitimate copies. While a single home copier will not individually create a large number of copies, it is expected that copying equipment will be so widespread that the total number of home copies will be very significant to the loss of commercial sales.
A related and potentially more serious threat to the legitimate producer of video and audio recordings is commercial piracy. The profit potential for illicit copies is so great that the threat of criminal sanctions, confiscation of plant and equipment has failed to deter these activities. For this reason, a system which will protect against copying and illicit use, and which does not rely upon a separate hardware device to be separately connected to the data reading hardware is desirable.
Security against copying of mass marketed data mediums may be increased by encrypting the data before recording on the medium, and further enhanced by changing the encryption key for each title, as well as for individual data frames of each title, frustrating any efforts to determine a universal decryption key. In order to provide such enhanced security, the keys for each title and each frame within a title must be supplied with the data medium in an undiscoverable form
A body of technology has developed for maintaining digital data such as computer software stored on a data medium, which is also the subject of wide spread copying piracy, inaccessible to unauthorized users. One common solution used to frustrate unauthorized use and copying of consumer software includes the provision of a hardware device mounted to a port of the computer which executes the software. During execution of the software, data which is necessary for the execution to proceed is recovered from the hardware device which may be a ROM. Unless the hardware device is possessed by the software user, the program cannot be executed. Duplicates of the software, therefore, are not usable without the corresponding ROM.
Adapting these measures to the problem of copying video and audio disks and magnetic tapes requires that a separate hardware device be provided with the encrypted software in order to recover the key necessary to decrypt the video or audio disk. The device must be difficult to replicate or analyze, and be capable of supplying the needed decryption keys on a title by title and a frame by frame basis to allow an authorized user to use the data.

System for securely storing and reading encrypted data on a data medium using a transponder


An inter-hierarchy synchronizing system and an LSI include a plurality of function blocks taking a hierarchical structure and having timing systems expressed by timing variables independent of each other and inter-hierarchy synchronizing blocks disposed these hierarchies. This synchronizing block has: an input event temporary storage part for receiving and storing an input event generation signal group from a higher-level block; an activation timing judging part for judging activations of a plurality of function blocks and transmitting activation signals; an output event temporary storage part for receiving and storing output event generation signals including a completion signal from lower-level blocks; and a final completion signal judging part for judging a final completion state on the basis of a signal from the output event temporary storage part and transmitting a final completion signal to the high-block. The pre-designed function blocks are operable at a high speed without undergoing an influence by a delay of clocks.

1. Field of the Invention
The present invention relates generally to an inter-hierarchy synchronizing system and an LSI using this system and, more particularly, to an LSI in which the existing system is actualized based on a hierarchical structure in a semiconductor chip.
2. Description the Prior Art
An LSI having as many as several millions or more of elements is complicated in its configuration and is therefore impossible to design manually. Designing inevitably involves a computer aided design (CAD). In this case, an integrated circuit is constructed by combining predesigned blocked circuits. The typical blocks to be combined are designed by use of gate arrays and standard cells.
FIG. 1 is an internal block diagram showing one example of a conventional LSI employed as a system constituting a large proportion or a part of an applied appliance. As illustrated in FIG. 1, this LSI is constructed in such a way that first through eighth circuit blocks 1-8 are formed in an LSI chip 11. These blocks 1-8 are operated in response to clock signals from an internal 2-phase clock generating part 9 or an external clock input terminal 10. Further, these blocks 1-8 are formed to input and output signals to the exterior of the LSI chip 11 via a bonding pad area 12.
A design of such an LSI involves fractionalizing the system into the first to eight blocks according to their functions and designing logical circuits for the respective blocks by use of gate arrays, etc.. Then, all these blocks 1-8 are connected. Contents of a logical drawing are inputted to a CAD tool. Whether the design is correct or not is verified by performing logical simulation of the whole. A layout, wiring, a prototype production and an improvement of the LSI are conducted based on a result of this verification.
Further, the following method is employed for obtaining a correct and stable operation of the LSI. To be specific, synchronizing clocks supplied from the internal 2-phase clock generating part 9 or the external clock input terminal 10 are delivered to the overall chip. For example, the respective blocks are unified by a single 2-phase clock system such as clocks .PHI.1, .PHI.2. Further, storage circuit parts are constructed of synchronous type circuits to the greatest possible degree. In addition, the essential timing judging and generating parts are operated in synchronism by means of single 2-phase clocks. As a result, control signals are transmitted as if spreading a net between the respective circuit blocks. The respective circuits are thus linked in a firm timing dependent relationship.
As described above, the conventional LSI adopts a so-called absolute synchronism design method, wherein the overall area of the chip is synchronized by using the single 2-phase clock system with respect to logical components such as microprocessors, gate arrays and standard cells in order to stably operate this LSI. Under such circumstances, if timings indicated by the single 2-phase clocks delivered to the overall chip separately arrive at a certain location in chip, this embraces possibility to cause a malfunction of the in-chip circuit system.
This possibility can be seen in the real scene. The method given above can not be applied even with the present CMOS process on the rule or 1.5 .mu.m-1.0 .mu.m in some cases.
Referring to the system of FIG. 1 for example, the interior of the chip is fractionalized into the first to eight blocks 1-8. During this block fractionalizing, there is almost no case where the design is conducted by elaborately analyzing a system request specification. That is, the dominant method is a chip construction method of directly allocating large-scale cells (mega cells) constituting independent high-function blocks of peripheral cores, MPU cores and further a cell library containing known physical dimensions of already-designed ALUs, multiplexers, decoders, register files, flip-flops, ROMs, RAMs, counters, shift registers and primitive gates (NAND, NOR, NOT, etc.).
Accordingly, as explained above, if this absolute synchronism design method is unreasonably applied to a high-speed VLSI, the clock delivery line group is brought into an almost stray state. It is almost impossible to give a consideration in terms of design to relieve this state. Consequently, the probability to cause the malfunction remarkably increases.
For this reason, the clock frequency is decreased in an attempt to obtain reliable operation. As a result, in the case of the LSI constructed on the rule of 1.0 .mu.m, the situation is such that the maximum system operation speed of the entire chip has to be set, though the element switching speed is as high as 300 ps-1 ns, extremely down to 1/50-1/100 of this maximum speed.
It is predicted that the VLSI in the future will adopt a hyperfine technology on the rule of 0.6 .mu.m or under and have several millions to several ten millions of elements for logic and approximately one hundred million of elements for memory. It is also predicted that the chip size will become as large as 10 mm.times.10 mm or more. Besides, the operation frequency is increased up to 30 MHz-100 MHz.
Under such circumstances, a rate of wiring delay time increases as compared with an element delay time. More specifically, the element switching speed is 0.1-0.3 ns, while the wiring delay becomes several ns/mm. For instance, one clock is 10 ns in a clock frequency of 100 MHz, and therefore it may be understood how large the influence of the wiring delay is.
If the LSI chips that have already been put on the commercial line are to be shrunk in size in an attempt to reduce the costs and increase the speed at the present time, the malfunction of the chip is induced. In the majority of cases, the design is forced to be fundamentally reviewed. More naturally, the VLSI takes the intrinsic synchronizing method of clocks in every portion of the chip. Consequently, a large phase difference is forced to occur due to indirect fluctuations in tinting and delivery route.
As explained above, the side effect in terms of timing increases with a larger chip size and a finer process. This aspect will be exemplified with reference to timing charts of FIGS. 2A-2G. As illustrated in FIGS, 2A and 2B, when arriving at the in-system blocks, clocks .PHI..sub.11, .PHI..sub.12 of a clock .PHI.1 and clocks .PHI..sub.21, .PHI..sub.22 of a clock .PHI.2 largely shift in phase as in the case of clocks .PHI..sub.'11, .PHI..sub.'12 of a clock .PHI.'1 and clocks .PHI..sub.'21, .PHI..sub.'22 of a clock .PHI.'2 as shown in FIGS. 2D and 2E.
Consider a circuit shown in FIG. 3 by way of an example of the system operating with such clocks. Data D shown in FIG. 2C is fetched from a first storage circuit 13 shown in FIG. 3. Data D' shown in FIG. 2F is fetched from a second storage circuit 14. It is assumed that an output X illustrated in FIG. 2G is obtained from a combinational circuit/storage circuit 15 to which outputs of the storage circuits 13, 14 are inputted. In this case, it is also assumed that the clocks .PHI.1, .PHI.2 shown in FIGS. 2A and 2B are supplied to the first storage circuit 13; the clocks .PHI.'1 , .PHI.'2 shown in FIGS. 2D and 2E are supplied to the second storage circuit 14; and the clock .PHI.'2 is supplied to the combinational circuit/storage circuit 15. In this instance, there arises a problem when an expected result f (D1, D'1) is not obtained as the output X from the combinational circuit/storage circuit 15, but an incorrect result f (D'1, D2) comes out.
Further, the phase difference derived from a difference in length among the delivery routes of the clock system and a turn-around thereof causes a critical path in every portion of the IC. The advantages of the synchronism type circuit design method are lost. To avoid this situation, there is needed a local time adjustment for queuing till the next safety timing. It follows that this presents a new problem wherein an extra increment in the number of elements is induced, and further the timing can not be broadly predicted. Moreover, this again causes the malfunction due to the shrinkage in size of the chip and the circuit modification that have hitherto been implemented.
Hence, the problems described above are big obstacles in the present scene where ASIC (Application Specific IC) spreads widely in such cases that the designer uses the already-completed LSI as a mega cell by shrinking this LSI and that the LSI design is effected on a larger scale by utilizing a library of mega cells which have already been offered by LSI manufacturers. This situation implies that when constructing the large-scale software, the common variable effective in the small-scale software in turn causes a side effect enough not to actualize a software construction.
As stated above, the conventional LSI does not actually, though the design based on the absolute synchronism system as an essential requirement is adopted, include the method of creating the absolute timing. It is therefore impossible to find out a broad design method capable of predicting a completely operated LSI. The actually designed LSI acquires some reliability to such an extent that an operating possibility remains.

Synchronizing system between function blocks arranged in hierarchical structures and large scale integrated circuit using the same


A DDR SDRAM where unidirectional row logic is associated with and connected to a single memory array instead of being associated with and connected to multiple memory arrays. The unidirectional row logic is located in the outward periphery of its associated array, but is not within a throat region between two arrays. The location of the row logic allows the throat region to include more bidirectional IO circuitry and signal lines servicing two arrays, which increases the performance of the SDRAM. In addition, separate power bussing is employed for the memory arrays and IO circuitry. This prevents noise from the arrays from affecting the IO circuitry and signal lines of the throat region and vice versa.

There is a demand for faster, higher capacity, random access memory (RAM) devices. RAM devices, such as dynamic random access memory (DRAM) devices are typically used as the main memory in computer systems. Although the operating speed of the DRAM has improved over the years, the speed has not reached that of the processors used to access the DRAM.
Synchronous dynamic random access memory (SDRAM) has been developed to provide faster operation in a synchronous manner. SDRAMs are designed to operate synchronously with the system clock. That is, input and output data of the SDRAM are synchronized to an active edge of the system clock which is driving the processor accessing the SDRAM.
Double data rate (DDR) SDRAMs and second generation DDR SDRAMs, known as DDR II SDRAMs, are being developed to provide twice the operating speed of the conventional SDRAM. These devices allow data transfers on both the rising and falling edges of the system clock and thus, provide twice as much data as the conventional SDRAM.
Referring to FIG. 1, a portion of a DDR SDRAM integrated circuit 10 is shown. The SDRAM 10 includes a plurality of memory arrays 20a, 20b, 20c, 20d (collectively referred to herein as "arrays 20") and peripheral circuitry 60 surrounding the arrays 20. Each array has a span (e.g., spans 22a, 22b) and includes, as shown in FIG. 2, multiple memory blocks 30 separated from each other in a first direction by a plurality of sense amplifiers 52, 54 (also referred to as sense amplifier stripes), and from each other in a second direction by a plurality of row drivers 42, 44. Accordingly each memory block 30 is bounded on two opposing sides by first and second sense amplifier stripes 52, 54 respectively. Further, each memory block 30 is bounded on two other opposing sides by first and second row driver stripes 42, 44 respectively. Gap cells 50 are located at the intersection of the row drivers 42, 44 and sense amplifier stripes 52, 54. The gap cells 50 may contain additional circuitry required by the arrays 20.
FIG. 3 illustrates a 128 megabit portion of the SDRAM circuit 10 consisting of a throat region 60 centrally located between two 64 megabit arrays 20a, 20b. The first array 20a contains at least one memory block 30a and sense amplifier circuit 52a. Digit lines 80a of the first array 20a are organized in a vertical direction while row lines 82a of the first array 20a are organized in a horizontal direction. The second array 20b contains at least one memory block 30b and sense amplifier circuit 52b. Digit lines 80b of the second array 20b are organized in a vertical direction while row lines 82b of the second array 20b are organized in a horizontal direction.
The throat 60 contains row logic 64 and a datapath 70. The row logic 64 contains LT drivers 62 and array drivers 66. The LT drivers 62 are global row decoders that drive LT lines 68 connected to the row drivers of both arrays 20a, 20b. As such, the LT drivers 62 are "bidirectional" (i.e., the LT driver 62 drive two different arrays 20a, 20b, the first array 20a being driven in a first direction and the second array 20b being driven in a second direction). The array drivers 66 include PH (phase), EQ (equilibration), ISO (isolation), NSA (n-sense amplifier control), PSA (p-sense amplifier control) drivers required to drive lines 67 connected to the sense amplifiers 52a, 52b. Thus, the row logic 64 of the throat 60 supports both arrays 20a, 20b in a bidirectional manner.
The illustrated datapath 70 contains IO circuits 72 having drivers for driving four 10 pairs 74 connected to the first and second arrays 20a, 20b. As such, the datapath 70 and the IO circuits 72 are bidirectional. The illustrated SDRAM 10 uses four IO pairs 74 per block 30a, 30b to obtain a 2n pre-fetch. It is desirable to increase the number of IO pairs 74 and enhance the overall performance of the DDR SDRAM 10, while simplifying its architecture and the routing of the lines interconnecting the throat 60 and the arrays 20a, 20b.
Moreover, although not shown in FIG. 3, the throat 60 and the arrays 20a, 20b share the same power bussing. With this configuration, power spikes and other sensitivities in the peripheral circuitry (e.g., throat 60) can adversely affect the array 20. Similarly, power spikes and other sensitivities in the arrays 20 can adversely affect the periphery, its IO circuitry and signal lines. Preventing noise from affecting the arrays 20 and the periphery will improve the performance of the SDRAM 10. Accordingly, there is a need and desire for a DDR SDRAM 10 with improved power bussing for the memory arrays 20 and peripheral circuitry (such as the throat 60).


A non-aqueous electrolyte secondary battery comprises rechargeable positive and negative electrodes and a non-aqueous electrolyte. The positive electrode comprises at least one selected from LiCo0.sub.2, LiMn.sub.2 0.sub.4 and LiNi0.sub.2 and the negative electrode consists most of alkai metals such as lithium, etc. The non-aqueous electrolyte contains lithium salts and has concentration ranging from 0.002 to 1.0 mol/liter of at least one acid anhydride selected from acetic anhydride, benzoic anhydride, succinic anhydride, phtalic anhydride and maleic anhydride.

1. Field of the Invention
This invention relates to a non-aqueous electrolyte secondary battery, particularly relating to one with an improved electrolyte.
2. Description of the Prior Art
Various studies have been carried out relating to non-aqueous electrolyte secondary batteries with a negative electrode that is composed of lithium metal, lithium alloy or a lithium compound for meeting the requirements of high voltage and high energy density applications.
Particularly, the use of Mn0.sub.2 or TiS.sub.2 as the positive active materials for these batteries has been examined. These positive active materials show an electric potential of about 3 V as compared with Li.
LiMn.sub.2 0.sub.4 and LiCo0.sub.2 and also LiNi0.sub.2 when used as the positive active materials show an electric potential of higher than 4 V and are receiving great attention.
In other words, great efforts are being made to increase battery voltage in addition to expansion of battery capacity for the purpose of gaining a high energy density from batteries. LiCo0.sub.2, in particular, is considered as a promising positive active material since it provides the possibility of large discharge capacity and excellent charge and discharge cycle characteristics.
Furthermore, adding one or more of Mn, Cr and Fe to LiCo0.sub.2 is tried in order to improve the charge and discharge cycle characteristic that makes one of the important characteristics required of secondary batteries.

Non-aqueous electrolyte secondary battery

Matsushita Electric Industrial Co., Ltd.


A stacked package structure and a method for manufacturing the same are disclosed. The package structure comprises: a substrate having a first surface and a second surface in opposition to each other; at least one chip deposed on and electrically connected to the first surface of the substrate; a plurality of electrical connection devices deposed on the first surface and periphery of the substrate, wherein each electrical connection device is higher than the at least one chip in altitude; and an encapsulant covering the first surface of the substrate, the at least one chip and the electrical connection devices, wherein a top end of each electrical connection device is exposed at a surface of the encapsulant.

The demand for low cost, small size, and more functionality has become the main driving force in the electronic industry. To achieve such goals, advanced packaging techniques like flip chip, chip scale package, wafer level packaging, and 3D packages have been developed. The 3D packaging technique is developed to integrate dies, packages and passive components into one package, in other words, to achieve system in a package solution. The integration can be made in side-by-side, stacked, or both manners. The outstanding advantages of 3D package are small footprint, high performance and low cost.
FIGS. 1 to 3 are schematic flow diagrams showing the process for manufacturing a conventional stacked package structure. In the fabrication of a conventional stacked package structure 250, a chip package structure 100 is firstly provided typically, in which the chip package structure 100 is generally a chip scale package (CSP). The chip package structure 100 mainly includes a substrate 102, a chip 104, an encapsulant 108 and bumps 110, such as shown in FIG. 1. The chip 104 is attached on a top surface 112 of the substrate 102, and is electrically connected to pads (not shown) of the substrate 102 by wires 106. The encapsulant 108 is formed on the top surface 112 of the substrate 102 and fully covers the chip 104, the wires 106 and the top surface 112 of the substrate 102. The bumps 110 are set on the outer portion of a bottom surface 114 of the substrate 102, in which the bumps 110 are electrically connected to the chip 104.
Next, another chip package structure 200 is provided, in which the chip package structure 200 is mainly composed of a substrate 202, a chip 204, an encapsulant 208 and bumps 210, such as shown in FIG. 2. The chip 204 is attached on a top surface 212 of the substrate 202, and is electrically connected to pads (not shown) of the substrate 202 by wires 206. The encapsulant 208 is formed on a portion of the top surface 212 of the substrate 202 and fully covers the chip 204 and the wires 206. The bumps 210 are set on a bottom surface 214 of the substrate 202, in which the bumps 210 are electrically connected to the chip 204. The top surface 212 of the substrate 202 of the chip package structure 200 further includes a plurality of connection pads 216 deposed thereon, in which the locations of the connection pads 216 are corresponding to that of the bumps 110 on the bottom surface 114 of the substrate 102.
Then, the chip package structure 100 is stacked on the chip package structure 200, and the bumps 110 of the chip package structure 100 are respectively connected to the corresponding connection pads 216. Subsequently, a reflow step is performed, so as to connect the bumps 110 of the chip package structure 100 to the connection pads 216 of the chip package structure 200 to complete the stacked package structure 250.
However, in the connection treatment of the chip package structure 100 and the chip package structure 200, warpage will occur in the chip package structure 100 and the chip package structure 200, especially the chip package structure 100. Furthermore, the room between the substrate 102 of the chip package structure 100 and the substrate 202 of the chip package structure 200 is still large, and the connection locations between the chip package structure 100 and the chip package structure 200 are at the outer region, so that a cold joint occurs between the chip package structure 100 and the chip package structure 200. As a result, the reliability of the stacked package structure is seriously deteriorated, the yield of the package process is greatly reduced, and the cost is substantially increased.


The present application relates to a lightness adjusting method for a display system. The method includes the steps of: writing a first driving signal into a display panel; controlling a first lens and a backlight module to be turned on simultaneously, where a plurality of light-emitting elements of the backlight module are turned on simultaneously, and the first lens and the plurality of light-emitting elements of the backlight module are turned on simultaneously; adjusting a first turn-on time of each light-emitting element; controlling a second lens and the backlight module to be turned on simultaneously, where the plurality of light-emitting elements of the backlight module are turned on simultaneously, and the second lens and the plurality of light-emitting elements of the backlight module are turned on simultaneously; and adjusting a second turn-on time of each light-emitting element.

The statements herein merely provide background information related to the present application and do not necessarily constitute the conventional art.
The lightness displayed by a liquid crystal panel is controlled by the cooperation of a backlight module, a signal driving circuit and a glasses driving circuit. The backlight module is composed of a plurality of light-emitting elements arranged in a certain way, the light-emitting elements are used to lighten the blocks of the liquid crystal panel, and average lightness of backlight of each block of the liquid crystal panel is different due to the differences in manufacturing processes of the light-emitting elements; the liquid crystal panel and liquid crystal glasses need to be driven for a certain time to output stable transmittance due to physical properties of liquid crystal. If the liquid crystal glasses are turned on synchronously with the writing of the liquid crystal panel driving signal and the turn-on of the backlight module, the interaction of the transmittance response of the liquid crystal glasses, the transmittance response of the liquid crystal panel and the average lightness of backlight of each block of the liquid crystal panel causes that the product of the transmittance response of the liquid crystal glasses corresponding to each block of the liquid crystal panel, the transmittance response of the liquid crystal panel and the average lightness of the backlight of each block of the liquid crystal panel is not equal, thus lightness of each block of the liquid crystal panel transmitting through the liquid crystal glasses is not uniform.

Lightness adjusting method for display system, lightness adjusting system and display system


A multiplier unit that may be configured to concurrently perform multiple division and square operations is disclosed. The multiplier unit may include multiple stages. Each stage may be configured to perform a corresponding arithmetic operation. Control circuitry coupled to the multiplier unit may be configured to schedule in a given cycle of the plurality of cycles, a respective tasks of a plurality of tasks included in a first operation for execution on a respective stage of the multiple stages. The control circuitry may be further configured to schedule execution of each tasks of a second plurality of tasks included in a second operation during a respective cycle on an unused stage of the multiple stages.

Technical Field
Embodiments described herein relate to integrated circuits, and more particularly, to techniques for performing arithmetic operations within integrated circuits.
Description of the Related Art
Computing systems typically include one or more processors or processing cores which are configured to execute program instructions. The program instructions may be stored in one of various locations within a computing system, such as, e.g., main memory, a hard drive, a CD-ROM, and the like.
Processors include various functional blocks, each with a dedicated task. For example, a processor may include an instruction fetch unit, a memory management unit, and an arithmetic logic unit (ALU). An instruction fetch unit may prepare program instruction for execution by decoding the program instructions and checking for scheduling hazards, while arithmetic operations such as addition, subtraction, and Boolean operations (e.g., AND, OR, etc.) may be performed by an ALU. Some processors include high-speed memory (commonly referred to as "cache memories" or "caches") used for storing frequently used instructions or data
Some arithmetic operations may not have dedicated hardware within an ALU. Such arithmetic operations, such as, e.g., division, may be implemented as a series of program instructions making use of functional blocks within the ALU. In some cases, additional circuitry may be added to an ALU to implement one of various algorithms for performing such arithmetic operations.

Scheduling multiple operations in a divider unit


A compact soldering apparatus capable of increasing reliability of products by reducing occurrence of dross and using lead-free solder, wherein a primary jet nozzle 1, a secondary jet nozzle 2, and a pump (not shown) forming jet waves 24, 25 are installed in a solder tank 6 reservoiring molten solder S. Guide plates 4, 5 are installed between the jet nozzles 1, 2 above a solder face F of the molten solder S on a position where the molten solder is dropped. The guide plates 4, 5 formed into a V-shape are provided with solder guide portions crossing each other so as to drop the molten solder S at different positions on the solder face F of the solder tank 6. Molten solder dropped onto upper portions of the guide plates 4, 5 passes through the solder guide portions and is made to fall on a nozzle side different to a nozzle side where the solder is flowed.

One of the flow soldering apparatuses performs soldering in that a printed circuit board is first soldered with a primary jet nozzle, and then a secondary jet nozzle adjusts soldering defects such as bridges, icicles, etc. caused through the soldering procedure of the primary jet nozzle (refer to, for example, Japanese Patent Application Laid-Open No. H9-8450). In this type of the flow soldering apparatus, a surface of solder has been oxidized which then produces impurities called dross. As a countermeasure thereto, a surface of a solder layer may be filled with inert gas (refer to, for example, Japanese Patent Application Laid-Open No. H9-47866), or the surface of the solder may be covered with anti-oxidizing oil such as vegetable oil. However, the former incurs increase in cost for using of the gas, which disadvantages a low-cost feature given to the flow soldering. On the other hand, the latter involves a problem of that stink or foreign matters occur due to thermal decomposition of the oil. The flow soldering apparatus may be provided with a dispersion protective-shield for foreign matters, which covers an upper portion where molten solder flowed and dropped from the nozzle strongly collides against a solder surface in a solder tank or flow from another nozzle (refer to, for example, Japanese Patent Application Laid-Open No. 5-305432).
Referring to FIG. 9, the molten solder both flowed from the primary jet nozzle and the secondary jet nozzle in the solder tank is moved downward and met each other between the jet nozzles. The dross tends to build up at the merging point D. Once the dross occurs, it spreads as covering the surface of the solder, and the dross eventually spreads upward over the surface flowed from the primary jet nozzle and the secondary jet nozzle. In order to prevent the upward spread of the dross, the interval between the solder flowed from the primary jet nozzle and the secondary jet nozzle is generally kept at 5 cm or more.
However, the foregoing flow soldering apparatuses have had the following drawbacks. Because the dross spreads upward over the flowed surface of the primary jet nozzle and the secondary jet nozzle, the dross attaches to the solder surface of the circuit board which causes soldering defects such as bridges, icicles, etc. Considering cost and productivity, the above soldering manner may be appropriate for home-use electrical products but cannot be applied to fine-pitch electronic components since the bridges cannot be eliminated completely. For the circuit board with the fine-pitch electronic components which is soldered in the conventional solder tank, operators need to perform visual inspection to solder portions after the circuit board is soldered. In case the bridges are detected, the operators are required to repair the circuit board with an iron, which hampers productivity.
Further, because the interval between the solder flowed from the primary jet nozzle and the secondary jet nozzle has approximately 5 cm, the solder attached to the circuit board cools down while the circuit board moves between the jet nozzles, whereby the performance of the soldering at the secondary jet nozzle becomes deteriorated. Also, for being incapable to reduce the interval between the nozzles, the above-mentioned flow soldering apparatuses have difficulties to be miniaturized.
Furthermore, in case the conveying speed of the circuit board between the primary jet nozzle and the secondary jet nozzle is made faster for not having the solder attached to the circuit board cooled, time in which the circuit board faces these jet nozzles gets shorter, whereby temperature of the solder on the circuit board surface is restrained from rising, causing soldering failure, or defects such as bridges, icicles, etc.
Still further, although a lead-free solder has been used in recent years for an environmental protection, the lead-free solder has a high-melting point (approximately 230° C.) compared to a conventional solder (approximately 183° C.). The lead-free solder is thus more affected by the temperature drop-down on the circuit board than the conventional solder. Accordingly, in order to use the lead-free solder, the interval between the primary jet nozzle and the secondary jet nozzle needs to be further reduced for preventing the solder from dropping-down of the temperature.
The present invention has been made in light of the above problem, and it is an object of the present invention to provide a compact soldering apparatus applicable for a lead-free solder while reducing an occurrence of dross to improve product reliability.

This patent is subject to a terminal disclaimer.


Methods and systems for collecting and processing quality of service (QOS) data are provided. A collection module receives the QOS data from a storage operating system for a plurality of storage volumes at time t2, when a process for collecting the QOS data began at time t1 such that t2>t1. The collection module estimates a QOS data value for time t1 and provides the estimated QOS data value to a performance manager that uses the estimated QOS data value for monitoring QOS for the plurality of storage volumes using a plurality of resources for processing input/output (I/O) requests.

Various forms of storage systems are used today. These forms include direct attached storage (DAS) network attached storage (NAS) systems, storage area networks (SANs), and others. Network storage systems are commonly used for a variety of purposes, such as providing multiple clients with access to shared data, backing up data and others.
A storage system typically includes at least a computing system executing a storage operating system for storing and retrieving data on behalf of one or more client computing systems (may just be referred to as "client" or "clients"). The storage operating system stores and manages shared data containers in a set of mass storage devices.
Quality of Service (QOS) is used in a storage environment to provide certain throughput in processing input/output (I/O) requests, as well as a response time (i.e. latency) within, which I/O requests are processed. QOS may also include processing certain number of I/O requests per second (IOPS), which is associated with throughput. Throughput means an average rate at which data is transferred for I/O requests. Different QOS levels may be provided to different clients depending on client service levels.
To process an I/O request to read and/or write data, various resources are typically used within a storage system, for example, network resources, processors, storage devices and others. The different resources perform various functions for reading and writing information. The use of resources impact QOS for clients. For example, if a client 1 overuses a certain resource then it may delay I/O processing for a client 2, which may lower the QOS for client 2.
As storage systems continue to expand in size and operating speeds, it is desirable to efficiently monitor resource usage within the storage system and analyze QOS data so that any incidents based on abnormal QOS data can be identified and handled appropriately. The storage operating system typically maintains QOS data regarding various storage volumes that use the resources of the storage system. Continuous efforts are being made to efficiently collect and pre-process QOS data so that the data can be efficiently analyzed for identifying abnormal incidents that may impact overall I/O processing in compliance with QOS policies.

Method and system for collecting and pre-processing quality of service data in a storage system


In a foreign materials filtering apparatus and a washing machine having the same, a filter unit is not exposed to inside of a washing tub thus not to directly come in contact with laundry, thereby preventing the filter unit and laundry from being damaged and enhancing the entire appearance. Also, the foreign materials filtering apparatus is modularized to facilitate a detachable mounting, thereby enhancing the user's convenience. Additionally, the amount of washing water passing through the foreign materials filtering apparatus is increased by controlling a flowing direction of washing water. Furthermore, foreign materials of washing water are prevented from being introduced into a gap between a washing water circulating duct and a filter unit, thereby enhancing a washing effect.

1. Field of the Invention
The present invention relates to a foreign materials filtering apparatus, and more particularly to a foreign materials filtering apparatus for a washing machine and a washing machine having the same.
2. Description of the Background Art
Generally, a washing machine is largely classified into a drum type washing machine that a washing tub rotates in a horizontal direction with respect to the ground, and a pulsator type washing machine the washing tub rotates in a vertical direction with respect to the ground. According to the drum type washing machine, while a washing tub rotates, laundry comes into friction with an inner wall of the washing tub or drops from the washing tub thereby to be cleaned. On the contrary, according to the pulsator type washing machine, laundry comes into friction with a water current generated while a pulsator rotates, or is entangled by the pulsator, thereby being cleaned.
In the conventional pulsator type washing machine a foreign materials filtering apparatus for filtering each kind of foreign materials such as nap generated from laundry during a washing process is installed above the washing tub.
In the foreign materials filtering apparatus, a filtering net for filtering foreign materials is attached to a frame detachably mounted at the washing tub. The frame is formed of an elastic material in a rectangular belt shape so as to be detachably mounted at the washing tub. And, the filtering net is formed of a mesh-shaped fibrous material or a material similar thereto having a certain aperture ratio so as to pass washing water and filter foreign materials.
In a washing machine having the foreign materials filtering apparatus, a pulsator provided on a bottom surface of a washing tub rotates to generate a water current, and by the generated water current, washing water rises along a passage formed between an inner wall and an outer wall of the washing tub. The risen washing water is introduced into the washing tub via the foreign materials filtering apparatus. While the washing water passes through the foreign materials filtering apparatus, foreign materials such as nap detached from laundry and mixed with the washing water are filtered by passing through a filtering net of the foreign materials filtering apparatus.
However, the conventional foreign materials filtering apparatus has the following problems.
First, the filtering net is installed to be exposed to inside of the washing tub, thereby repeatedly coming in contact with laundry. Accordingly, the filtering net or laundry may be damaged, or the frame may be detached from the washing tub, which causes the entire appearance to be degraded.
Second, since a washing water inlet communicated with the filtering net is formed on the plane, washing water is not smoothly introduced into the foreign materials filtering apparatus. Accordingly, the efficiency to remove foreign materials from washing water is degraded.
Third, when a gap is generated at a coupled part of the filtering net to another member, foreign materials are introduced into the gap thus to cause bacterial breeding, or to have a difficulty in detachably mounting the filtering net at the coupled part.

Foreign materials filtering apparatus and washing machine having the same


cDNAs were synthesized from the mRNA isolated from the mantle epithelial tissue of pearl oyster (Pinctada fucata) using reverse transcriptase and joined to a vector to give a cDNA library. A cDNA inserted in this cDNA library was caused to be expressed in Escherichia coli, for instance, to give a polypeptide corresponding to said cDNA. This polypeptide serves as a novel ingredient of cosmetic compositions, for instance.

1. Technical Field
The present invention relates to a gene cDNA for a novel polypeptide which is produced by the mantle tissue (mantle epithelial cells) of the Japanese pearl oyster (Pinctada fucata), a vector containing the cDNA, host cells transformed with the vector, a polypeptide produced thereby, a method of producing the same, a DNA coding for the polypeptide, an antibody to the polypeptide and a cosmetic composition containing the polypeptide or a degraded peptide derived therefrom.
2. Prior Art
In cases where it is desired to obtain a specific polypeptide or a DNA coding therefor, the prior art methods so far generally used identifies the desired polypeptide in a tissue or cell culture fluid, then isolates and purifies the polypeptide, and clones the gene or, alternatively, clones the gene through expression thereof using the presence of biological activity as an indicator.
However, the information concerning the factors produced by pearl oyster mantle epithelial cells is very scanty and the factors are mostly insoluble, making it difficult to isolate and purify them and identify them in terms of biological activity.

Polypeptide gene cDNA, vector containing said cDNA, host cells transformed with said vector, method of producing said polypeptide, DNA encoding said polypeptide


The present invention provides a human antibody against blood coagulation factor VIII (hereinafter also referred to as “FVIII”) and an antibody fragment that binds to human FVIII and specifically inhibits the coagulation activity of human FVIII. ScFv display phage libraries, prepared by using scFv DNAs constructed by random combinations of immunoglobulin VH chain genes and VL chain genes from lymphocytes from hemophilia A patients, is reacted with FVIII immobilized to a solid phase via anti-FVIII monoclonal antibody, and scFv clones capable of binding to FVIII are cloned to reveal VH and VL chains of FVIII-specific antibody.

Hemophilia A is a genetic disease where disorder or deficiency of FVIII leads to reduction of the blood coagulation activity, resulting in bleeding in the bowels or at the joint, etc. For treatment of patients suffering from hemophilia A, supplemental treatment of FVIII has been carried out. In about 10% (8 to 15%) out of the patients who received supplemental treatment, however, induction of an antibody to FVIII has been observed. This antibody, called "anti-FVIII inhibitor antibody", makes supplemental treatment with the blood coagulation factors ineffective and hemostatic management of the hemophilia patients extremely difficult.
Elucidation of nature of the anti-FVIII inhibitor antibody and its production mechanism would enable inhibiting or regulating production of the inhibitor antibody. Up till the present, there has been research using an anti-FVIII inhibitor antibody (polyclonal antibody) purified from the sera of hemophilia patients having anti-FVIII inhibitor antibodies or a mouse anti-FVIII inhibitor antibody (mouse monoclonal antibody) to thereby provide much information. As to cloning of anti-FVIII inhibitor antibody from patients, however, there has almost been no report.
On the other hand, epidemiological study has shown that hemophilia patients exhibited low occurrence of arteriosclerosis such as myocardial infarction, in particular, significantly low occurrence of lethal myocardial infarction (Br. J. Haemotol. 1990, 75, 525–530; Lancet 1995, 345(8943) 152–155); and that an increased FVIII level in plasma may possibly be a risk factor for arterial infarction or arteriosclerosis (Semin. Hematol. 1997, 34, 171–187; Thromb. Res. 1997, 84, 359–362).
Thus, it is expected that, if lowered blood coagulation could be maintained by using an anti-FVIII inhibitor antibody, this would contribute to prevention and treatment of arterial infarction and arteriosclerosis. In particular, an anti-FVIII antibody that specifically recognizes activated FVIII free from von Willebrand factor (hereinafter also referred to as "vWF") exhibits much long clearance in blood as failing to complex with FVIII usually bound with vWF in blood, and hence can be an excellent anti-thrombotic drug in which lowered blood coagulation may be maintained for a long period of time with a single administration and bleeding or other adverse side effects can be much reduced.
There have already been numerous attempts to prepare mouse monoclonal antibodies to FVIII in many laboratories including those prepared by the present inventors and so a number of monoclonal antibodies to FVIII have been produced. Some of them have been proved to inhibit the FVIII activity and to behave as an anti-FVIII inhibitor antibody. With these mouse monoclonal antibodies, numerous results have been obtained including analysis of regions that inhibit the FVIII activity, etc.
A completely human anti-FVIII inhibitor antibody, however, has scarcely been prepared with success although it has been attempted over more than ten years in many laboratories with the hybridoma technique (human/mouse or human/human hybridoma technique) or the EB transformation technique, using lymphocytes from patients having anti-FVIII inhibitor antibodies.
In 1998, Marc G. Jacquemin et al. reported first establishment of the method for preparing a completely human anti-Factor VIII inhibitor antibody using the EB transformation technique (Blood, 92(2), 1998, 496–506). They established BO2C11 antibody which was thought to inhibit binding of FVIII with vWF or with phospholipids and to recognize the C2 domain of FVIII. VH and VL genes of this antibody were derived from DP5 fragment and VK3, respectively. They also succeeded in establishment of clones producing anti-Factor VIII inhibitor antibodies to the C1 domain with the similar method and reported that the antibodies are derived from DP64 and VK3 (Blood, 95, 2000, 156–163). Up till the present, it is only Marc G. Jacquemin et al. who has ever established a clone producing such a human-derived anti-FVIII inhibitor antibody with the hybridoma technique (human/mouse or human/human hybridoma technique) or the EB transformation technique.
On the other hand, the antibody display phage technology reported by J. D. Marks et al. (J. Mol. Biol, 222, 581–597, 1991) is advantageous in that an antibody repertoire from lymphocytes from patients can be screened in a shorter period of time and in more clones than the conventional hybridoma technique or the EB transformation technique. In recent years, there has been an attempt to use this antibody display phage technology for isolating the inhibitor antibody.
W. H. Ouehand et al. reported in the International Congress on Thrombosis and Hemostasis, 1995, June (Israel) (1995, ISTH) that they cloned a human anti-FVIII single-chain antibody (scFv) from human antibody display phage libraries from healthy donors and a library of synthetic human phage antibodies. J. Davis et al. also reported in the International Congress on Thrombosis and Hemostasis, 1997, June that they cloned a human anti-FVIII single-chain antibody (scfv) from human antibody display phage libraries wherein VH genes were derived from hemophilia patients and VL genes were from healthy donors. In these reports, however, the human antibody display phage libraries were constructed in a synthetic or semi-synthetic manner in which not both of VH and VL was derived from hemophilia patients. Moreover, although the clones obtained in these reports bound to FVIII as shown by ELISA, it was not proved whether the clones inhibited the coagulation activity of FVIII.
In 2000, E. N. van den Brink et al. reported that they constructed an antibody display phage library in which VL chain genes were derived from healthy donors and VH chain genes were from patients having the inhibitor antibodies and isolated four clones reactive with FVIII, of which two clones were reactive with the C2 domain of FVIII whereas the other two were reactive with the A2 domain of FVIII [van Den Brink, Human antibodies with specificity for the C2 domain of factor VIII are derived from VH1 germline genes (Blood, 2000; 95: 558–563); Molecular analysis of human anti-factor VIII antibodies by V gene phage display identifies a new epitope in the acidic region following the A2 domain (Blood, 2000; 96: 540–545)].
It has been reported that the C2 domain of FVIII was involved in binding with vWF or with phospholipids and was a principal recognition region of many anti-FVIII inhibitor antibodies present in blood from patients (Healey, J. F. et al., Residues Glu2181-Val2243 contain a major determinant of the inhibitory epitope in the C2 domain of human factor VIII, Blood, 1998, 92, 3701–3709).
According to the study by van den Brink et al., the antibody fragments to the C2 domain obtained thereby did not have an inhibitor activity to FVIII. Accordingly, a human anti-FVIII antibody with the inhibitor activity has not yet successfully been isolated, hence failing to provide sufficient information.
The reason why a human anti-FVIII antibody with the inhibitor activity could not successfully be isolated with the antibody display phage technology was presumed to be that genes of VL chain of antibody fragments were not derived from patients and that there might be some problems in the screening procedure.

Human-type anti-blood coagulation factor VIII antibody

Juridical Foundation The Chemo-Sero-Therapeutic Research Institute


An optical imaging system having a free-form surface includes an image source for generating image light, a lens assembly for reflecting the image light incident thereon, a first reflective surface, a second reflective surface, and a beam splitter that are disposed opposite to each other. The present disclosure allows the image light to pass through the lens assembly twice, reduces the weight of the optical system, and makes the system structure more compact, thus providing an optical imaging system featuring low distortion, high image quality, and a compact structure. A reflective surface is disposed between the image source and the lens assembly, so that the distance between the image source and the lens assembly can be reduced. The second reflective surface is designed as a free-form surface and a first lens and a second lens are aspheric lenses.

With the development of display technologies, virtual reality (VR) and augmented reality (AR) technologies have become increasingly mature, and head-mounted displays (HMDs) for implementing these technologies have also been developed. A head-mounted display is generally mounted on the head of an observer and therefore needs to have a compact and lightweight structure to reduce the burden on the viewer. However, to achieve a better visual observation effect, the head-mounted display relies on its key component, i.e., optical system, to obtain good imaging quality and a large field of view. To achieve a good optical effect, complicated optical devices are required to improve the optical imaging quality and the field of view, which is not conducive to reducing the weight and increasing the compactness of the head-mounted display. The structural size of the optical system directly affects the size and weight of the head-mounted display, and the imaging quality of the optical system directly affects the display effect of the head-mounted display. In addition, the head-mounted display needs to obtain a large field of view and exit pupil diameter, to allow a user to observe a larger area within a short distance, and to adapt to the observation effects under different pupil distances.
Therefore, how to design an optical system having a small volume, high image quality, and a large field of view becomes a technical problem to be urgently resolved in the prior art. A heretofore unaddressed need exists in the art to address the aforementioned deficiencies and inadequacies.

Compact, lightweight optical imaging system having free-form surface and common optical axis direction


The kayaking harness provides a kayaker with support for his back during extended boating sessions. The harness has a back support structure and a tether for attaching the back support structure to the kayak. The back support structure has a torso band having a first end and a second end, the torso band encircling the trunk of the body, a pair of shoulders straps, each shoulder strap having a first end attached to the torso band and a free second end, and a support band attached between the shoulder straps parallel to the torso band. The tether has a loop at one end, the two ends of the torso band and the free ends of the shoulder straps being attached to the loop, and an attachment mechanism at the other end for attaching the tether to the kayak, at least part of the tether having an elastic strap in parallel with nylon webbing so that the tether is resilient and extensible to the length of the webbing.

1. Field of the Invention
The present invention relates to accessories for sporting and boating, and particularly to a kayaking harness for supporting the back of the kayaker on extended kayaking trips such as expeditions and touring.
2. Description of the Related Art
Kayaking is a popular boating sport throughout the world Although kayaks may be broadly classified as touring kayaks (designed for stability and boating on extended bodies of water such as lakes, seas, etc.) or as whitewater kayaks (designed for maneuverability and boating on rivers, streams, etc.), the kayak enthusiast may have occasion to spend hours at a time in the cockpit of his craft while engaged in touring on extended trips over large bodies of water, or in whitewater expeditions on long and winding rivers.
On such occasions, the kayaker's back may tend to become tired or sore. The back rest in the cockpit of a conventional kayak is extremely short, extending no further than the small of the back. Consequently, kayakers must rely upon their back muscles to maintain an erect sitting posture while holding and using a twin blade paddle to stroke on both sides of the kayak. After several hours of sitting in essentially the same posture with no support for the middle and upper back, the kayaker's back muscles can become exhausted and weaken.
The present invention is a back harness especially designed for use with kayaks which allows the kayaker to lean back and support the weight of his upper torso with the harness, relieving tension in the back muscles.
U.S. Pat. No. 3,990,743, issued Nov. 9, 1976 to H. W. Nelson, describes a back support for canoes having a rigid seat. However, this device is not a harness, but an elongated back support supported by a strut attached to the front end of the seat and a brace under the seat. The device is not suited to use in a kayak, as the support would interfere with the nylon or tubular neoprene spray skirts used to protect the cockpit from water.
U.S. Des. Pat. No. 290,293, issued Jun. 9, 1987 to W. D. Hambley, shows what appears to be a loop which may be fitted around the torso having a semicircle of fabric attached to a semicircle of rigid tubing. Three parallel springs extend from the tubing, and are attached at their free end to a small rod having a hook.
The drawings in Norwegian patent No. 79436, published Nov. 26, 1951, appear to show a harness which appears to be a single piece of elongated webbing having its ends joined behind the waist and looping through a ring in front of the waist three times in order to wind around the waist, the ribs, and the shoulders, criss crossing in the back posterior to the chest. A ring encircles the webbing on either side of the waist, straps being attached to the ring for connection to another apparatus.
The drawings in Danish patent 72350, published Apr. 2, 1951 show a band having a buckle fastening its ends to form a loop for encircling the torso. A pair of shoulder straps, which do not appear to be adjustable in length, criss cross at the back of the loop and are fixedly attached to the band. A pair of loops encircled by rings are attached to the back of the band. Snap hooks attach two smaller loops to the rings.
Additional harnesses and safety belts adapted for other applications include: U.S. Pat. No. 293,799, issued Feb. 19, 1884 to G. B. Simkin (safety belt for window washers and painters); U.S. Pat. No. 604,677, issued May 24, 1898 to W. C. Humphrey (brace and back support for bicyclist); U.S. Pat. No. 638,861, issued Dec. 12, 1899 to L. C. Bean (harness for bicyclist); U.S. Pat. No. 2,441,115, issued May 4, 1948 to W. Lambert (shoulder harness supporting a pail, used by fruit and vegetable pickers); U.S. Pat. No. 3,125,375, issued Mar. 17, 1964 to G. L. Bird, et al. (safety harness for a child seated on car seat); U.S. Pat. No. 5,215,239, issued Jun. 1, 1993 to P. A. Walters, Jr. (harness for supporting a musical instrument, such a a saxophone); U.S. Pat. No. 5,544,363, issued Aug. 13, 1996 to McCue, et al. (vest and harness for ambulance attendants); and U.K. Patent No. 969,687, published Jun 8, 1962 (harness with a seat sling for supporting workers at a height above ground level).
None of the above inventions and patents, taken either singularly or in combination, is seen to describe the instant invention as claimed. Thus a kayaking harness solving the aforementioned problems is desired.


The subject of the present disclosure is a process for dyeing keratinous material, in particular human hair. In one example, the process includes applying an agent (a) to the keratinous material. The agent (a) contains at least one organic silicon compound from the group of silanes with one, two or three silicon atoms. The agent (a) further contains at least one silicone polymer. An agent (b) is applied to the keratinous material. The agent (b) contains at least one pigment.

Changing the shape and color of keratinous material, especially human hair, is an important area of modern cosmetics. To change the hair color, the expert knows various coloring systems depending on the coloring requirements. Oxidation dyes are usually used for permanent, intensive dyeing's with good fastness properties and good grey coverage. Such colorants contain oxidation dye precursors, so-called developer components and coupler components, which, under the influence of oxidizing agents such as hydrogen peroxide, form the actual dyes among themselves. Oxidation dyes are exemplified by very long-lasting dyeing results.
When direct dyes are used, ready-made dyes diffuse from the colorant into the hair fiber. Compared to oxidative hair dyeing, the dyeing's obtained with direct dyes have a shorter shelf life and quicker wash ability. Dyeing with direct dyes usually remain on the hair for a period of between about 5 and about 20 washes.
The use of color pigments is known for short-term color changes on the hair and/or skin. Color pigments are generally understood to be insoluble, coloring substances. These are present undissolved in the dye formulation in the form of small particles and are only deposited from the outside on the hair fibers and/or the skin surface. Therefore, they can usually be removed again without residue by a few washes with detergents containing surfactants. Various products of this type are available on the market under the name hair mascara.
If the user wants particularly long-lasting dyeing's, the use of oxidative dyes has so far been his only option. However, despite numerous optimization attempts, an unpleasant ammonia or amine odor cannot be completely avoided in oxidative hair dyeing. The hair damage still associated with the use of oxidative dyes also has a negative effect on the user's hair. A continuing challenge is therefore the search for alternative, high-performance dyeing processes.
EP 2168633 B1 deals with the task of producing long-lasting hair colorations using pigments. The paper teaches that when a combination of pigment, organic silicon compound, hydrophobic polymer and a solvent is used on hair, it is possible to create colorations that are said to be particularly resistant to shampooing. For example, 3-aminopropyl-triethoxysilane was used as the organic silicon compound.
In WO 2018/115059 A1 a dyeing process is described, which runs in several steps. One step involves the application of an organosilane, and another step involves the application of a direct dye to the hair. This process is also used to achieve dyeing's with good wash fastness properties. The silanes used in this writing are for example 3-aminopropyltriethxoysilane and methyltrimethoxysilane.
In the dyeing processes of EP 2168633 B1 and WO 2018/115059 A1, organosilicon compounds from the group of silanes are used, the molecular structure of these silanes comprising at least one hydroxy group and/or hydrolysable group. Due to the presence of hydroxy groups or hydrolysable groups, silanes are reactive substances that hydrolyze or oligomerize or polymerize in the presence of water. When applied to the keratin material, the oligomerization or polymerization of the silanes initiated by the presence of water ultimately leads to the formation of a film which fixes the coloring compounds and thus produces very long-lasting colorations.
A prerequisite for a particularly long-lasting coloration on the hair is, on the one hand, good wash fastness, i.e., the film produced on the hair should not wash off because of treatments with aqueous surfactant solutions such as those used in common shampooing.
Apart from shampooing, however, hair is also subject to other stresses in the daily routine, such as the mechanical stress that occurs, for example, when combing, brushing, and styling. A coloring that is in the form of a colored film on the outside of each hair fiber is quite sensitive to the bending, traction and friction of the hair that occurs during combing.
If adhesion is poor or too brittle, the colored film may flake off the hair fiber. In this case, after combing or brushing, the user perceives a reduced color intensity, an irregularity in the coloring and, in the worst case, a mottled color result.
During the reworking of the dyeing processes disclosed in EP 2168633 B1 and WO 2018/115059 A1, it has now become apparent that the dyeing results obtained during these processes still have potential for improvement about their mechanical resistance. The dyeing's obtained in these processes were not yet sufficiently stable to repeated combing and consequently did not yet possess a sufficiently high rub fastness.

Method for dyeing keratinous material, comprising the use of an organosilicon compound, a silicone polymer and a dyeing compound