A foldable frame that can unfold into a complete open structure, and is convenient for converting into a storage container with an upward facing opening. The upper frame body and lower frame body are connected with the central pillars and support rods on both sides, and form a 6-pillar support structure at both ends of the frame, so that the frame can support more weight, realize multi-layer stacking or support other articles, such as desktop or seat surface.

As is known, a foldable frame can be unfolded to provide a larger space, in order to accommodate more articles, and can be folded to a compact volume, so as to occupy less space for collection and handling. For example, CN100459904C shows a portable folding frame mechanism, comprising: a frame located on both sides of frame layer, wherein: at least two layers of frame are vertically arranged between the frame on both sides. The frame layer consists of two symmetrical frame plates connected together by way of split joint with hinge members. Hinge members of each upper frame and lower frame are connected at both ends by a connecting rod. Each layer of the frame is respectively hinged at both ends with the frame on both sides. The connecting rod is provided with a barrel connector consisting of a sleeve and support rods hinged on both sides of the sleeve. The sleeve of the sleeve connector is moveably covered on the connecting rod, and the support rod ends on both sides of the sleeve are hinged respectively with the frame on both sides. With the hinge joints composing the frame in each part, the frame can be easily folded to form a stable structure under the restriction/guidance of the connecting rod.
During handling, it is only necessary relatively to fold the back of the folding frame by gently lifting the frame with hands inserted into the handle hole in the central part of the top frame., and with the help of the hinge joint of two plates composing the folding frame, and driving both sides of the frame folding inwardly, thereby reducing its volume, and greatly facilitating storage and portability. This technology provides a concept of a folding frame, but the frame can only have opening on side face, thereby limiting the application of the frame. How to improve the weakness of the existing technology and design a frame with opening on side face and an open structure on top becomes an object of this invention.


A retrofit pickup assembly for stringed instruments is disclosed. The retrofit pickup assembly includes an existing coil and existing or new magnets and a flexible circuit having a plurality of wires and two connectors. A pickup assembly for new stringed instruments is also disclosed utilizing the same principles. A method of retrofitting an existing pickup assembly for stringed instruments is also disclosed.

Powered stringed instruments are prevalent. One of the most commonplace powered stringed instruments is the electric guitar. Typically, an electric guitar has six steel strings stretched between tuning machines (knob-gear arrangements for each of the strings), and a bridge where the strings terminate. On a solid body guitar, one or more electromagnetic pickups are disposed on the body of the guitar directly under the strings.
In order to amplify stringed instruments, the pickup converts string motion into a proportional voltage. A common type being used is an electromagnetic, inductive design. This type of pickup was originally developed in the 1930s and set the pattern for subsequent designs. The most basic type of inductive pickup uses a copper wire coil surrounding one or more permanent magnets. A representative pickup is shown in FIG. 1, which is a schematic representation of a spool assembly of a magnetic pick-up of a stringed instrument according to prior art.
Referring to FIG. 1, a spool assembly 10 typically includes a composite material that is used as a bobbin 11 to wrap electrical wiring coil 12. The number of turns in the coil 12 varies, in some embodiments the number is of the order of 6500 turns. The wires forming the coil 12 are generally made of copper with very thin (and fragile) polymer insulation. The coil terminates in wire-ends 13 and 14, which are respectively connected to (e.g., soldered) ends of the coil 12. The ends of the coil 12 are shown as white lines 16 and 18 for clarity. A plurality of permanent magnets 15 is positioned above the bobbin. The magnets 15 are generally made of Alnico, an alloy composed of aluminum, nickel and copper. Rare earth magnetic materials such as Neodymium or Samarium-Cobalt are also used, although seldom. Still other materials known in the art may be used.
The strings of the guitar (not shown) are positioned above the magnets 15. The electromagnetic field produced by the permanent magnet(s) 15 is normally stationary. However, the vibration of the steel strings disturbs the electromagnetic field and makes it vary. The interaction between the changing electromagnetic field or the changing magnetic flux and the stationary coil induces a time-varying voltage in the coil 12. The time-varying signal can be then amplified and played through speakers as sounds.
Pickup designers typically vary a small number of parameters in order to tailor the tonal characteristics. These are: 1) Diameter of coil wire; 2) Number of turns in the coil; 3) Magnet geometry; and 4) Magnet material. The relatively small number of design variables limits pickup designs.
Single coil pickups are sensitive to 60 Hz line noise in addition to string motion. As a result, a 60 Hz hum is often superimposed over the sound due to string motion. To overcome this undesired attribute, a dual pickup system, commonly known as the Humbucker design, was developed to take advantage of common mode rejection. The Humbucker design (not shown) includes two spool assemblies positioned adjacent one another in order to eliminate the 60 Hz hum (noise) that is induced into the coils.
Another design modification and evolution in the electric guitar technology is the addition of active circuitry to pre-amplify the signal at the pickup. Since the generated time-varying signals are low in power, traveling over a long distance before reaching the amplifier results in attenuation. By using a pre-amplifier at the pickup, the distance travelled and hence ohmic attenuation, prior to actively amplifying the signal at a main amplifier can be minimized.
It should be noted that conventional pickups are large and heavy. The presence of magnets and coils of copper wire can make these pickups excessively heavy for acoustic instruments and thereby these pickups are suited mostly to solid body electric stringed instruments. The size of the conventional pickup means that large pockets must be provided on the stringed instrument bodies to accommodate the pickup. Furthermore, conventional pickups are difficult to manufacture. Winding thousands of turns of wire that are as thin as human hair is difficult and time consuming. In many cases, the first 100-200 turns of the coil 12 can be shorted out by the pressure of successive turns of wire, thereby compromising the insulation. Also, it is difficult to make each coil identical, but build variation can result in a variation of sound, with all other conditions being the same. The coil wires can be microphonic. Also, the moving electromagnetic field sensed by the coil wire creates a force on both the moving wire as well as stationary wires in order to prevent the movement of the moving wire in the magnetic field. Unless the wire is firmly restrained, it can move and cause undesirable signals.
Therefore, a novel pickup arrangement for string instruments is needed that can be used as a kit in new instruments or to retrofit existing instruments to overcome some or all of the shortcomings of the prior art pickups.

Flexible printed circuit board pickup for stringed instruments and method of using the same


The present invention concerns antigen binding proteins and fragments thereof which specifically bind B Cell Maturation Antigen (BCMA), particularly human BCMA (hBCMA) and which inhibit the binding of BAFF and APRIL to the BCMA receptor. Further disclosed are pharmaceutical compositions, screening and medical treatment methods.

BCMA (CD269 or TNFRSF17) is a member of the TNF receptor superfamily. It is a non-glycosylated integral membrane receptor for the ligands BAFF and APRIL. BCMA's ligands can also bind additional receptors: TACI (Transmembrane Activator and Calcium modulator and cyclophilin ligand Interactor), which binds APRIL and BAFF; as well as BAFF-R (BAFF Receptor or BR3), which shows restricted but high affinity for BAFF. Together, these receptors and their corresponding ligands regulate different aspects of humoral immunity, B-cell development and homeostasis.
BCMA's expression is typically restricted to the B-cell lineage and is reported to increase in terminal B-cell differentiation. BCMA is expressed by human plasma blasts, plasma cells from tonsils, spleen and bone marrow, but also by tonsillar memory B cells and by germinal centre B cells, which have a TACI-BAFFR low phenotype (Darce et al, 2007). BCMA is virtually absent on naïve and memory B-cells (Novak et al., 2004a and b). The BCMA antigen is expressed on the cell surface so is accessible to the antibody, but is also expressed in the golgi. As suggested by its expression profile, BCMA signalling, typically linked with B-cell survival and proliferation, is important in the late stages of B-cell differentiation, as well as the survival of long lived bone marrow plasma cells (O'Connor et al., 2004) and plasmablasts (Avery et al., 2003). Furthermore, as BCMA binds APRIL with high affinity, the BCMA-APRIL signalling axis is suggested to predominate at the later stages of B-cell differentiation, perhaps being the most physiologically relevant interaction.
Multiple Myeloma (MM) is a clonal B-cell malignancy that occurs in multiple sites within the bone marrow before spreading to the circulation; either de novo, or as a progression from monoclonal gammopathy of undetermined significance (MGUS). It is commonly characterised by increases in paraprotein and osteoclast activity, as well as hypercalcaemia, cytopenia, renal dysfunction, hyperviscosity and peripheral neuropathy. Decreases in both normal antibody levels and numbers of neutrophils are also common, leading to a life threatening susceptibility to infection. BCMA has been implicated in the growth and survival of myeloma cell lines in vitro (Novak et al., 2004a and b; Moreaux et al., 2004).
BCMA expression (both transcript and protein) is reported to correlate with disease progression in MM. Using Affymetrix microarrays, it was demonstrated that the TACI and BCMA genes were over-expressed in Multiple Myeloma Cells (MMC) compared with their normal counterparts (Moreaux et al, 2004). Gene expression analysis has been used to compare human myeloma cells with purified plasma cells from patients with MGUS and from normal bone marrow as well as with primary tumour cells from B-cell lineage leukaemias (Bellucci et al, 2005). The BCMA gene was highly expressed in all myeloma samples. Although purified plasma cells from patients with MGUS had lower expression of BCMA, there was no significant difference when compared with the expression found in normal plasma cells or myeloma cells. In contrast, BCMA expression was significantly lower in B-cell Chronic Lymphocytic Leukaemia (CLL), pre-B Acute Lymphocytic Leukaemia (ALL) and T-cell ALL (T-ALL). Mouse models that transgenically over-express BAFF or APRIL have a significant increase in B-cell lymphomas (Batten et al., 2004-BAFF; Planelles et al., 2004-APRIL). In humans, excess BAFF and APRIL have been detected in the sera and micro-environments of patients with a number of B-cell malignancies, as well as other B-cell disorders.
All patent and literature references disclosed within the present specification are expressly and entirely incorporated herein by reference.

This patent is subject to a terminal disclaimer.

B cell maturation antigen (BCMA) binding proteins


Grouping assembly of coin validation and return/payment mechanisms, in such a way that said compact assembly is useful to be included in automatic vending machines and especially recreative prize machines. In this way the assembly (1) comprises a coin selector (2) with a top duct (3) for conveying the coins from the coin slot of the machine to the selector (2), some deposit tubes (4) of the coins for payment, a remover (5) of the coins from the deposit tubes (4), a coin separator (9) for separating the coins towards two money boxes (10) and (11) and a lifting mechanism (7) for conveying the coins to be returned/paid to the receiving box of the machine connected to a small top duct (8) arranged close to the top duct (3) for conveying the coins to the coin slot of the machine to the selector (2).

Conventionally, the different mechanisms necessary for coin validation/selection, as well as the return/payment of coins, which are included in automatic machines, both vending machines for dispensing all types of products as well as in recreative prize machines, are comprised of means that should be assembled independently coupling together for the correct operation thereof.
In the way, the assembly operation is made difficult since it is necessary to assemble and couple the different mechanisms in the body of the machine, given that one of the desired requirements is that these mechanisms take up as little space as possible. An attempt is made to optimize the available space.
Besides, it should be taken into account that there are more and more different types and models of automatic coin-operated machines, vending machines of very diverse goods, as well as recreative machines. Therefore, the more personalized they are, the more complex their industrialization is with all the inconveniences represented thereby.
On the other hand, we can indicate that in the operation of putting the recreative prize machines into operation, first of all, it is necessary to load by hand the deposit tubes of the coins to be used for payment. This represents a clear inconvenience, given that a considerable amount of time must be used in said operation due to the large number of coins that should be inserted.
Hence, then the count will begin for a suitable control of the game from the coins inserted, in other words, starting a control of the inserted coins and of the payments made in the game.
Likewise, it can be indicated that in the course of the game a moment may be reached when the number of coins deposited in the different deposit tubes for payment of prizes drops considerably. Conventional machines do not have any means for self-reloading that can avoid a hypothetical and improbable insufficient payment.


A high power, high frequency auto transformer with a non-integer turns ratio and a bandpass filter frequency response.

The present invention relates generally to a high power, high frequency transformer, and more particularly to a transformer with a non-integer turns ratio.
There is a need for non-integer turns ratio transformers, particularly in impedance matching and even more particularly in combiners where a .sqroot.3 or .sqroot.5 turns ratio is desired. Such non-integer turns ratio transformers are generally difficult to physically construct, often requiring numerous manufacturing steps difficult to automate.
There is also a need for a defined pass band over a specific frequency range, a need generally satisfied by a filter following the transformer. Improved efficiency results from combining the transformer and filter functions in a single unit.
In addition, there are many environments where vibration presents structural problems, particularly for magnetic cored, liquid cooled transformers.
These and other problems occur, by way of example, in modern shipboard solid state radio transmitters where transformers may be used to construct combiners for summing the power of two or more radio frequency sources to a single antenna. Because it has desirable magnetic characteristics, i.e., low reluctance, ferrite is typically used for the core of such transformers, generally as a toroid or a block with holes for the windings drilled therein. For high power (1 to 100 kw) applications, however, ferrite cores reach sufficient magnetic flux that the application of a linear current to the primary winding will not result in a linear magnetic induction without prohibitive amounts of ferrite making the transformer unacceptably expensive, bulky, heavy and susceptible to vibration damage.
Where non-integer turn ratios are desired, e.g., 1.73 (.sqroot.3) and 2.24 (.sqroot.5), multi-filar windings on ferrite cores have been used, but are structurally complicated and therefore difficult and expensive to build.
Furthermore, the use of ferrite for high power applications, produces severe eddy current and hysteresis losses reflected by heat dissipation in the transformer core. Such losses limit maximum transformer power, and may require elaborate and potentially hazardous cooling systems to offset the temperature rise of the ferrite. These problems are particularly severe in shipboard environments which are sensitive to both size and weight considerations, where the available electric power is limited, and where a cored transformer and its liquid cooling systems are highly susceptible to shock and vibration.
It is accordingly an object of the present invention to obviate many of the above problems of the known prior art and to provide a novel high power, high frequency transformer.
Another object of the present invention is to provide a novel high power, high frequency transformer that is simple in construction, light in weight and low in cost.
Still another object is to provide a novel high power, high frequency transformer with significantly improved resistance to shock and vibration.
Yet another object of the present invention is to provide a novel high power, high frequency transformer with a non-integer turns ratio.
A further object of the present invention is to provide a novel transformer having significant harmonic and intermodulation product suppression.
Another object of the present invention is to provide a novel high frequency, high power transformer that has bandpass characteristic that is substantially independent of temperature at normal operating ranges.
Yet still another object of the present invention is to provide a novel method of transforming impedance by a non-integer factor.
It is still a further objective to obtain a novel transformer having a bandwidth ratio up to 5:1.

RF high power, high frequency, non-integer turns ratio bandpass auto-transformer and method


A truss shoe for a roof support system includes a bolt receiving section, an intermediate section, and a cable engaging section. The cable receiving section has a passageway having a first open end spaced from, and in facing relationship, to the bolt receiving section and an opposite second end, wherein the passageway has a cone-shaped portion having a decreasing diameter as the distance from the first end of the passageway increases to receive a wedge shaped cable retention assembly. The surface of the intermediate section includes a cut out portion that extends from the first opening of the passageway toward the bolt receiving section and terminating at a riser. A locking tube has one end in the passageway in facing relationship to the retention assembly and the other end in engagement with the riser to prevent the retention assembly from moving out of the first opening of the passageway.

1. Field of the Invention
This invention relates to a truss shoe with a wedge retaining sleeve, and more particularly, to a truss shoe having a wedge retaining sleeve, or locking tube to detachably secure a cable retention assembly in the passageway of a cable receiving section of the truss shoe.
2. Discussion of the Presently Available Technology
Truss-type mine roof supports are well known in the art of supporting the roof of an underground passageway, such as a mine passage. A basic truss system includes one or more rods extending horizontally the width of the mine passage adjacent the roof and connected at their ends to anchor bolts, which extend at an angle adjacent the ribs of the passage into the rock strata over a solid pillar. The rods are tensioned and vertical components of compressive forces are transmitted into the solid material over the pillars, as opposed to the unsupported rock material immediately above the passage.
With this arrangement, a truss system shifts the weight of the rock strata from over the mined-out passage back onto the pillars. Conventionally, holes are drilled into the mine roof at a 45° angle from the horizontal adjacent to the mine rib so that the holes extend into the supported rock structure over a pillar.
Once the holes are drilled at an angle into the strata over the pillars at the rib line, anchor bolts are inserted into the drilled holes and are secured in place using mechanical expansion shell assemblies and/or a resin made from a mixture of a resin component and an epoxy component. Before the bolts are inserted in the drilled holes, truss shoes or bearing blocks are positioned on the bolt at the emergent end of the bolt from the hole. As the bolts are securely anchored in the drilled holes, the bearing surfaces of the truss shoes or bearing blocks are compressed into engagement with the mine roof.
For an uneven mine roof or a roof having severely potted areas, the truss shoe preferably has sufficient bearing surface to contact the mine roof so that the truss shoe is correctly positioned for engagement with the horizontal truss members. Once the truss shoes are securely positioned at the mine roof adjacent the ribs, the horizontal truss members are assembled and connected to the truss shoes. The truss members are tightened to a preselected load to exert tension on the truss members so that the weight of the rock strata over the mined out area beneath the roof is shifted along the horizontal truss members upwardly into the solid rock strata over the pillars at the rib line.
The truss hardware is connected under tension to the truss shoes that are held tightly against the mine roof by the anchored angle bolts. A wide variety of truss hardware is commercially available to form a truss system between the anchored angle bolts. For example and not limiting to the discussion, U.S. Pat. No. 7,261,494 (hereinafter also referred to as "USPN '494") to the Jennmar Corporation discloses a cable truss system including a pair of truss shoes, a pair of inclined bolts, and a truss assembly. Each truss shoe attaches to a roof through an inclined bolt and includes a surface for contacting the roof and a truss supporting member. The truss assembly extends between the truss supporting members of the pair of truss shoes for applying an uplifting force to the roof to support the roof above the passage. The truss assembly includes a pair of cables engaged to the truss shoes attached to the roof.
Several non-limiting embodiments of truss shoes are disclosed in USPN '404. Of particular interest in this discussion is the truss shoes shown in FIGS. 15-18 of USPN '404. In general, the truss shoe includes a bolt receiving end portion to receive the bolt that attaches the truss shoe to the roof and an opposite cable receiving and retaining end portion to receive an end of a cable and to secure the cable to the truss shoe. The cable receiving and retaining end portion includes a tapered passageway for receiving a wedge or cone-shaped retention assembly. The retention assembly has three pieces held together by a flexible band and has an expander to bias the pieces away from one another to pass a cable into an end of the retention assembly.
The retention assembly having the expander is placed in the passageway of the assembly and secured in the passageway by a washer. More particularly, the bottom portion of the washer is placed in a groove formed in the shoe, and the upper portion of the washer is secured in position by a tab bent over the top of the washer. In the event the expander moves out of the retention assembly during the handling and shipping of the truss shoe, or it is necessary or desired to remove the retention assembly from the passageway of the truss shoe, the washer is removed by lifting the tab and lifting the washer from the groove in the truss shoe. After a retention assembly is placed in the passageway, the washer is secured over the passageway as previously discussed.
Although the truss shoes of USPN '494 discussed above are acceptable, there are limitations. More particularly, bending the tab toward or away from the top of the washer causes fatigue of the tab, and the tab brakes from the truss shoe. When the tab breaks from the truss shoe, the washer is usually secured in position by welding the top of the washer to the truss shoe. As is appreciated by those skilled in the art, breaking the weld to release the washer from, and welding the washer to, the truss shoe is time consuming.
As can be appreciated by those skilled in the art, it would be advantageous to provide an arrangement for securing the cable retention assembly in, and for removing the cable retention assembly from, the passageway of the cable receiving section of a truss shoe that does not have the limitations of the presently available arrangements, e.g. the washer and tab or weld arrangement discussed above.

Truss shoe with wedge retaining sleeve and method of assembling same


A vent apparatus that prevents the ingress of flames, superheated air, and/or flaming materials (e.g., embers) from an external fire to a building or structure is disclosed. The vent apparatus comprises a frame that defines an inlet, and outlet, and an internal passage. A guiding member is disposed within the internal passage to thereby deflect or direct a portion of a flow of material between the inlet and outlet. A blocking element is disposed on the guiding member that is configured to expand to at least partially block the flow of material between the inlet and outlet.

The background description includes information that may be useful in understanding the present invention. It is not an admission that any of the information provided herein is prior art or relevant to the presently claimed invention, or that any publication specifically or implicitly referenced is prior art.
Buildings are provided with vents in order to improve air circulation, reduce heat buildup, and reduce interior humidity. Conventional air vents allow the free movement of air in and out of enclosed structures, but typically will not stop the penetration of liquids or solids from getting through vent openings. Consequently, such vents can provide access to flames, embers, and hot gases produced by external fires to the interior of the building. Since this can lead to ignition of the building and/or its contents, it is desirable to utilize vents and similar devices that are designed to block or otherwise reduce the ability of flames and/or hot gases to traverse the vent and gain access to the interior of the building.
Various attempts have been made to provide materials and/or devices that permit airflow to building interiors under normal conditions and prevent undesirable entry of flames and/or hot gases when a fire is present outside of the building. United States Patent Publication No. 2009/0049781, to Pilz et al, describes wall systems and construction components that incorporate intumescent materials, which expand when heated. Pilz et al teaches that such materials can be incorporated into a vent as a perforated layer that lies within the vent structure such that air flow through the perforations (and hence the vent) under normal conditions. This perforated intumescent layer expands when heated to block flow across the vent. All publications herein are incorporated by reference to the same extent as if each individual publication or patent application were specifically and individually indicated to be incorporated by reference. Where a definition or use of a term in an incorporated reference is inconsistent or contrary to the definition of that term provided herein, the definition of that term provided herein applies and the definition of that term in the reference does not apply.
Similarly, United States Patent Application No. 2004/0216900, to Bobenhausen, describes a system for preventing the spread of fire that has started in an enclosed space (in this instance, an aircraft interior) by placing intumescent materials in and/or around apertures and other openings that surround the enclosed space. Expansion of the intumescent material by heat restricts or eliminates flow of materials through such openings. Furthermore, United States Patent Application No. 2007/0251175, to Wexler, describes a louvered vent system in which intumescent material is affixed to a louver surface such that expansion on heating causes the material to contact an adjacent louver, thereby reducing or blocking airflow through the vent.
All of these designs, however, appear to be arranged such that, when flames or superheated air enter the structure, the intumescent material is immediately and directly exposed. Since such intumescent material requires time for expansion, this direct exposure can permit superheated air, flames, and/or flaming materials to bypass the intumescent material before it is fully expanded, permitting undesirable entry of such materials into the space to be protected.
Thus, there is still a need for a safe, effective, and economical means for preventing flames, superheated air, and/or flaming materials from an external fire from entering a ventilated building or structure.


A three-dimensional integrated circuit that provides reduced interconnect signal delay over known 2-dimensional systems. The three-dimensional integrated circuit also allows improved circuit cooling. The three-dimensional integrated circuit includes two or more electrically connected integrated circuits, separated by a cooling channel.

1. Field of the Invention
The invention relates to a multi-layered, three-dimensional integrated circuit and to a method for fabricating a multi-layered, three-dimensional integrated circuit.
2. Description of the Related Art
Multi-chip 2-dimensional module approaches currently used in the integrated circuit (IC) industry for interconnecting chips into an electronic system suffer from several significant limitations. These include: high electrical impedance between individual chips; low areal and vertical densities; and high cost, complexity and inefficiency in thermal management.
A particularly important limitation of 2-dimensional approaches is interconnect signal delay. Interconnect delays in large 2-dimensional chips have begun to increase per unit length in successive generations of IC technology. A need clearly exists, therefore, for technologies that reduce overall interconnect length in tandem with increasing device density.
One potential way of overcoming the shortcomings of 2-dimensional integrated circuits is the development of 3-dimensional integrated circuit technology. The fabrication of 3-dimensional ICs by several techniques has been previously reported. However, previous techniques still suffer from many disadvantages rendering such techniques less commercially advantageous. One shortcoming of known techniques is ineffective thermal management. Interlayer alignment tolerance is also a limitation of current techniques.
The present invention provides 3-dimensional integrated circuits, and methods of preparing the same, in which many of the problems of prior art systems, including signal delays and ineffective thermal management, are overcome.


An AC-to-DC power converter draws input current through an inductor. When the input voltage of the converter is sufficiently high and the switch of the converter is on, current flows into the converter, through the inductor, to the tap of a transformer, through a first primary winding of the transformer, and through the switch. When the switch is then turned off, current continues to flow through the inductor and to the tap of the transformer but then flows through a second primary of the transformer and into a storage capacitor. Energy stored in the storage capacitor is transferred to the load when it is not possible to obtain sufficient energy from the input current to supply the load. The AC-to-DC converter has very few circuit components and low input current harmonics.

"Power factor correction" (PFC) techniques are used to realize AC-to-DC power converters which draw input currents having low harmonic content. For additional background, see the patent application entitled "LOW COST AC-TO-DC CONVERTER HAVING INPUT CURRENT WITH REDUCED HARMONICS", U.S. Ser. No. 08/543,561, filed Oct. 16, 1995, by Francis M. S. Ho, et al. (the subject matter of which is incorporated herein by reference) and U.S. Pat. No. 5,446,366 entitled "BOOST CONVERTER POWER SUPPLY WITH REDUCED LOSSES, CONTROL CIRCUIT AND METHOD THEREFOR", issued Aug. 29, 1995, by John A. Bassett, et al. (the subject matter of which is incorporated herein by reference).
FIG. 1 is a simplified circuit diagram of an AC-to-DC power converter 1 designed to have low input current harmonics. AC-to-DC power converter 1 includes input terminals 2, a rectifier bridge 3, a power switch 4, a storage capacitor 5, one magnetic component 6 (having a first primary winding 6A, a second primary winding 6B and a secondary winding 6C), power diodes 7, 8, 9, an output rectifier circuit 10, a control circuit 11, and output terminals 12.
First, although such AC-to-DC power converters operate satisfactorily for many applications, it is desirable to reduce the number of circuit components in order to reduce cost. Second, although the input current harmonics of the AC-to-DC power converter of FIG. 1 are relatively low, it is nevertheless desirable to reduce such input current harmonics further. FIG. 2 is a waveform diagram illustrating the input voltage and input current waveforms of the AC-to-DC converter of FIG. 1. The sharp current spikes of the input current waveform represent undesirable high frequency input current components.
Accordingly, an AC-to-DC power converter is desired which has improved input current harmonics and which also has fewer circuit components.

Low cost AC-to-DC converter having input current with reduced harmonics


A superconducting wire (1; 31), contains NbTi superconducting material and Cu, with one enclosing tube (2), in particular, a copper enclosing tube. At least three Al blocks (3a-3c) are disposed peripherally distributed in the enclosing tube (2) and at least three sections containing NbTi (4a-4c) are also disposed peripherally distributed in the enclosing tube (2) and separate the Al blocks (3a-3c) from one another in the peripheral direction. The Al blocks (3a-3c) each make large-surface contact with their adjacent sections containing NbTi (4a-4c). A stabilized NbTi superconducting wire is thereby provided, which has low weight and which can be manufactured at low cost. The superconducting wire has a reduced risk of crack formation, in particular, during wire drawing.

The invention relates to a superconducting wire, comprising NbTi superconducting material and Cu.
Niobium-titanium (NbTi) is an important superconducting material, which, due to its good plastic deformability (both of a final material and of its precursors), can be deployed in a variety of ways, for example, in superconducting magnet coils or in superconducting cables. The NbTi superconducting material is typically integrated in a superconducting wire, wherein a multiplicity of NbTi filaments usually extends in the longitudinal direction of the superconducting wire.
As part of a drawing process, the wire manufacturing procedure usually includes plastic deformation in a hexagonal outside cross-section in order to simplify the bundling processes of individual NbTi filaments (or also other structures and intermediate structures). The resulting hexagonal elements can then be very compactly disposed, for example, in a copper enclosing tube, cf. U.S. Pat. No. 5,088,183 A referred to in the introduction
The superconducting properties of NbTi are only achieved at especially low temperatures, below approx. 9 K, so that the superconductor must be cooled, for example, with liquid helium. Moreover, the superconducting condition cannot be maintained if the magnetic field strength or the electric current density is too high.
NbTi superconducting wires are typically stabilized with copper (Cu), usually with a high degree of purity. The copper runs parallel to the superconducting filaments in the superconducting wire; for example, the copper can constitute a matrix for superconducting NbTi filaments. Copper is a good heat conductor, through which effective cooling of the superconducting NbTi filaments can be achieved. Furthermore, copper exhibits high electrical conductivity. If superconductivity in the superconducting wire is lost locally, the copper provides a parallel electrical current path, limiting a rise in electrical resistance and associated heat generation. With effective cooling, superconductivity can be restored to the local, normally conducting region in the superconductor (stabilizing function). Even if superconductivity cannot be restored, the copper protects the superconductor from damage ("melting") by limiting the increase in resistance and thus limiting heat generation, while also efficiently removing the resulting heat (quench protection). Moreover, the copper improves the mechanical strength of the superconducting wire.
Not only is copper an expensive material, it is also relatively heavy with a density of approx. 8.9 g/cm3, which is undesirable for many applications. Alternative materials that can at least partially replace copper are therefore sought for stabilizing NbTi superconductors. Pure aluminum (Al) would be a suitable material in terms of heat conductivity and electrical resistance, and is less expensive than copper and, with a density of 2.7 g/cm3, considerably lighter.
WO 2008/121764 A1 proposes a NbTi superconductor structure with a Cu sleeve, an Al core and multifilament NbTi rods disposed in a ring between them.
While Cu and NbTi are both relatively hard and behave in a similar way when plastically deformed, Al is much softer than NbTi and Cu. When wire containing Al structures, in particular, an Al core, was drawn, cracks extending transversely with respect to the longitudinal direction of the wire were observed in an NbTi superconducting wire. A wire containing cracks is of no use for superconductor applications.
U.S. Pat. No. 5,189,386 discloses a superconductor structure in which an Al core is divided into six sectors by layers of a Cu—Ni alloy. This structure is relatively complex.
U.S. Pat. No. 4,652,697, which is the closest prior art, describes a superconductor structure in which three Al wires and four multifilament wires are bundled, for example, with NbTi filaments and a copper matrix. One of the multifilament wires is disposed in the center of the superconductor structure. The structure is held together by PbSn solder. It is difficult to process solder in wire production and, as an additional material, it can additionally aggravate the problem of crack formation.
JP 09 282953 A describes an Nb3Al superconductor wire in which Nb3Al filaments are embedded in a copper matrix. Embedded additional structures made of Nb or Ta can be used for strengthening. In one embodiment, additional structures with an Al rod in a Cu tube are proposed.
The object of the invention is to propose a stabilized NbTi superconducting wire, which has a low weight, which can be manufactured at low cost, wherein the superconducting wire has a reduced risk of crack formation (especially during wire drawing).

NbTi superconductor with peripherally distributed Al block for weight reduction


A floral display comprising a frame for securing water retaining florist foam in a decorative shape that may be hung for display. The floral display frame provides for simple securing of the foam and allows access to the foam for complete floral coverage.

1. Field of the Invention
The present invention relates generally apparatus and methods for displaying flowers and other decorative plants.
2. Description of Related Art
Bouquets and other floral displays have moved well past the "gathered bunch of flowers" tied with a pretty ribbon. Technological advancement has allowed floral displays to expand into great structures and small. One such advancement is water retaining floral foam that may be cut into various shapes to fit into vessels and support flowers from commercial flower displays to personal sized displays.
Within the floral display industry, and in particular within the personal sized display market, current means for supporting as floral display are either unduly complex or require extensive training to create inspiring shapes and designs. These limitations exist because there has been a lack of simple design forms that allow for a base of creative expression.
All references cited herein are incorporated by reference to the maximum extent allowable by law. To the extent a reference may not be fully incorporated herein, it is incorporated by reference for background purposes and indicative of the knowledge of one of ordinary skill in the art.


A head section for a rotary cutting device includes a body portion that includes a blade passage defined between a blade entrance opening and a blade exit opening. A blade fastening mechanism is positioned in the blade passage and includes a blade engaging member. The blade engaging member is biased by a biasing mechanism to extend across the blade passage at a blade install position. The blade engaging member is movable against the bias to clear the blade passage. A blade having a mount aperture proximate an insertion end thereof is secured to the body portion when the mount aperture occupies the blade mount position and the blade engaging member extends through the mount aperture. The blade can be installed in and removed from the head section without tools, simply by advancing the blade through the blade passage.

As is known, some head sections for rotary cutting devices employ blades that extend outwardly from the head section such that, when the head section is rotated, the blades are also rotated to cut vegetation or other items as necessary. The blades are typically secured to the head section by screw connections or doweling so as to fasten the blades respectively between a body portion and a cap portion, and the cap portion needs to be removed in order to change a damaged or worn-out blade. The body and cap structures thus present an inconvenience when changing the blades, and there is a possibility of incorrect assembly, which may affect operational safety. In other head sections, special tools must be used to mount and remove blades, and such is also undesirable, as a tool-less mount and removal is preferable.
Thus, a need exists for a head section for a rotary cutting device, wherein the head section employs blades and provides blade fastening mechanisms whereby a blade can be installed or removed from the head section without having to disassemble any portion of the head section. A need also exists to provide a head section where the blades can be mounted and removed without the use of tools.

Head section for a rotary cutting device


The invention relates to plasma light sources with a continuous optical discharge (COD). The light source contains a gas filled chamber with a region of radiating plasma sustained by a focused beam of a CW laser. A density of gas particles in the chamber is less than 90·1019 cm−3 and a temperature of the chamber is in a range from 600 to 900 K or optionally higher. Preferably the density of gas particles is as low as possible and the temperature of the inner surface of the chamber at operation is as high as possible under providing a gas pressure in the chamber of about 50 bar or more. The technical result of the invention consists in providing COD sustaining conditions, which are optimal for achieving high stability and high brightness of the radiating plasma, in the creation on this basis of broadband light sources with ultra-high brightness and stability.

Continuous optical discharge is a stationary gas discharge sustained by laser radiation in pre-created relatively dense plasma. COD-based light sources with a plasma temperature of about 15,000 K are among the highest brightness continuous light sources in a wide spectral range between about 0.1 μm and 1 μm (Raizer, "Optical Discharges," Sov. Phys. Usp. 23(11), November 1980, pp. 789-806). Compared to arc lamps, such laser-pumped plasma light sources not only have a higher brightness, but also a longer lifetime, making them preferable for numerous applications.
The indicated temperature of the radiating plasma, about 15,000 K, is practically fixed, since when an attempt is made to increase it by increasing the power of a continuous wave (CW) laser (within 2-10 times, but not by many orders of magnitude), the plasma volume will increase, and the additional power will be released by radiation and thermal conductivity from the increased volume and surface of the plasma-gas interface. In other words, the plasma temperature is largely stabilized by the COD itself, by the conditions of its existence. In this regard, in order to increase the brightness to sustain the COD, pulsed lasers with a high repetition rate are used, including in conjunction with the use of a CW laser, the power of which is not lower than the threshold power required to sustain the COD, as is known, for example, from patent RU 2571433, issued on Dec. 20, 2015.
However, with this approach, there is a problem of instability of a high-brightness laser-pumped plasma light source.
This drawback is largely overcome in the broadband light source known from U.S. Pat. No. 9,368,337, issued on Jun. 14, 2016, in which the optically transparent COD plasma has a shape elongated along the axis of the CW laser beam. Plasma radiation is collected in the longitudinal direction, which results in a high brightness of the light source.
However, with longitudinal collection of plasma radiation, the problem of blocking laser radiation in an output beam of plasma radiation arises. Solving the problems of increasing the brightness, increasing the absorption coefficient of laser radiation by the plasma, and significantly reducing the numerical aperture of the blocked diverging laser beam that has passed through the plasma, this device does not completely solve the problem of light source brightness stability.
In the broadband light source known from U.S. Pat. No. 9,357,627, issued on May 31, 2016, plasma radiation is collected in directions other than the directions of propagation of the laser beam. Along with this, due to the optimization of light source configuration in which the laser beam is directed vertically upward along the camera axis and the region of radiating plasma is in the immediate vicinity of the upper part of the chamber, the energy and spatial stability of the broadband plasma light source is increased by suppressing the turbulence of convective flows in the gas-filled chamber.
The problem of increasing the stability and control of convective gas flows, the turbulent flow of which leads to instability of the brightness of the light source was also solved by optimizing the geometry of the camera and the light source as a whole in a number of U.S. patent Ser. No. 10/008,378, issued on Jun. 26, 2018; Ser. No. 10/109,473, issued on Oct. 23, 2018; U.S. Pat. No. 9,887,076, issued on Feb. 6, 2018, Ser. No. 10/244,613, issued on Mar. 26, 2019. However, the optimal conditions for obtaining continuous generation of plasma radiation with high spectral brightness, close to the maximum achievable for light sources of this type, more than 50 mW/(mm2·sr·nm), and low relative brightness instability a, less than 0.1% were not determined.

Laser-pumped plasma light source and method for light generation


The invention relates to a coaxial cable plug-in assembly for coaxial cables and including an electrical connection assembly. The electrical connection assembly can be connected to ground potential. The plug-in assembly includes two complementary parts. At least one of the plug-in assembly parts embraces an electrically insulating base member which is intended to accommodate a connecting device and which includes at least one through-penetrating hole adapted for coaction with a first subpart of a sleeve-like connecting device, and with a second subpart adapted for coaction with a coaxial cable whose screening conductor is intended to embrace the second subpart of the connecting device. The electrical connection assembly includes a spring-like collar which extends completely or partially around the second subpart of the connecting device for electrical and mechanical coaction between the subpart and the collar, and further includes a supportive part which coacts with the collar. The supportive part includes outer contact surfaces which are intended to abut the inner surface of a metal subpart with an adapted contact pressure, this inner surface being, in turn, related to ground potential.

Several different designs of electric plug-in assemblies in general and coaxial cable plug-in assemblies in particular are known to the art.
At the high, and even higher, transmission speeds aforementioned, and when using coordinated contacts or contact devices in an electric plug-in assembly intended for coaxial cables, it is important that signal transmission can take place from a first coaxial cable to circuit board components such that the central conductors of the coaxial cables or the like obtain good contact with one another through the medium of the connecting devices of the plug-in assembly, although it is also important that the screening conductor of the coaxial cable is intact and connected directly to ground upstream of the system earth on the circuit board, also through the medium of the plug-in assembly, so that electromagnetic disturbances will be passed to ground before manifesting as disturbances on the system ground.
In the case of coaxial cable plug-in assemblies, measures have already been taken to ensure that good electrical contact is achieved between the central conductors and that good screening is also achieved through the plug-in assembly.
It is also known that when the transmission speed of the digitalized signals or current pulses, or the so-called bit rate, increases up towards 150 Mb/s and higher, the plug-in assemblies used become sensitive to occurrent disturbance voltages and that the transmitted current pulses can become distorted to such an extent as to make it difficult or impossible to understand the pulses.
Large voltages that occur on screening conductors have a highly negative effect in this respect.
It has been found practical to take measures for connecting the screening conductor directly to ground potential at a point located some distance upstream of the circuit board.
It is also known (U.S. Pat. No. 4,820,201) to connect the screening conductor of a coaxial cable to a metallic plug-in-assembly casing with the aid of a metal plate.
It is also known (U.S. Pat. No. 3,670,292) to use a foil having inner and outer resilient tabs for grounding purposes.


A preferred printing system includes a printer configured to communicatively couple with a workstation, which incorporates a first code entry device for receiving first coding information from a user. The printer incorporates a second code entry device that is configured to receive second coding information from the user. Additionally, the printer is configured to print data in response to correlating the first coding information received at the first code entry device with the second coding information received at the second code entry device. Devices, methods and computer readable media also are provided.

1. Field of the Invention
The present invention generally relates to printers and, in particular, to systems and methods for providing secure printing while utilizing printers remote from the workstations from which the printing was requested.
2. Description of the Related Art
The proliferation of computer networking has rendered it commonplace for a user to enter, download and/or, otherwise, utilize information at a workstation, and then, when the information is designated to be printed, print the information at a site remote from that workstation. Oftentimes, however, the nature of the data to be printed lends itself to being printed in a secure environment where the ability of someone other than the user to retrieve the printed data should be minimized. Heretofore, in order to ensure that someone other than the user is unable to retrieve the user's printed document(s) from a printer, the user typically must request that data be printed, such as by the use of a typical printer driver, and then walk to the printer so that no one else is able to retrieve the printed document. However, if the user is unable to be available at the printer prior to the document being printed, the printed document may be retrieved by someone other than the user.
Therefore, there is a need for improved systems and methods which address these and other shortcomings of the prior art.

Hewlett-Packard Development Company, L.P.


A pixel circuit, and a method for operating a pixel circuit, to provide a multiple knee response characteristic. In one embodiment of the invention, one or more feed-through pulse (FTP) signals are transmitted to an integration node to end a first linear integration time period. The FTP signal allows electrons to drain from the integration node to a reset node through a transfer gate. After the first integration period, a second linear integration period is conducted on the pixel circuit, where the photo conversion gain of the pixel circuit becomes reduced under higher illumination conditions due to the drained node. Such operation creates a pixel with a photo response having multiple “knee” points, where each “knee” in the photo response curve will create separate regions whose photo sensitivities can be independently controlled with minimal thermal interference. By setting different voltage levels for the FTP signal and by controlling the integration time periods, the photo-response of the pixel circuit can be easily controlled.

Intrascene dynamic range refers to the range of incident light that can be accommodated by an image sensor in a single frame of pixel data. Examples of scenes that generate high dynamic range incident signals include an indoor room with outdoor window, an outdoor scene with mixed shadows and bright sunshine, night-time scenes combining artificial lighting and shadows and, in an automotive context, an auto entering or about to leave a tunnel or shadowed area on a bright day.
Dynamic range is measured as the ratio of the maximum signal that can be meaningfully imaged by a pixel of the imager to its noise level in the absence of light. Typical CMOS active pixel sensors (and charge coupled device (CCD)) sensors have a dynamic range from 60 to 75 dB. This corresponds to light intensity ratios of 1000:1 to about 5000:1. Noise in image sensors, including CMOS active pixel image sensors, is typically between 10 and 50 e-rms. The maximum signal accommodated is approximately 30,000 to 60,000 electrons. The maximum signal is often determined by the charge-handling capacity of the pixel or readout signal chain. Smaller pixels typically have smaller charge handling capacity.
Typical scenes imaged by cameras have lighting levels that generate signals on the order of 10–1,000 electrons under low light (1–100 lux), 1000–10,000 electrons under indoor light conditions (100–1000 lux), and 10,000->1,000,000 electrons (1000–100,000 lux) under outdoor conditions. To accommodate lighting changes from scene to scene, the so-called interscene dynamic range, an electronic shutter is used to change the integration time of all pixels in the arrays from frame to frame.
To cover a single scene that might involve indoor lighting (100 lux) and outdoor lighting (50,000 lux), the required intrascene dynamic range is of the order of 5,000:1 (assuming 10 lux of equivalent noise) corresponding to 74 dB. In digital bits, this requires 13–14 bits of resolution. However, most CMOS active pixel sensors have only 10 bits of output and 8 bits of resolution typically delivered to the user in most image formats such as JPEG. Companding of the data is often used to go from 10–12 bits to 8 bits. One type of companding is gamma correction, where roughly the square root of the signal is generated.
In order to accommodate high intrascene dynamic range, several different approaches have been proposed in the past. A common denominator of most approaches is performing signal companding within the pixel by having either a total conversion to a log scale (so-called logarithmic pixel) or a mixed linear and logarithmic response in the pixel. One example of a mixed linear and logarithmic circuit can be found in co-pending and commonly assigned patent application Ser. No. 10/226,127, filed Aug. 23, 2002, titled "A Wide Dynamic Range Linear-And-Log Active Pixel," the disclosure of which is incorporated by reference herein.
These prior approaches have several major drawbacks. First, the knee point in a linear-to-log transition is difficult to control, leading to fixed pattern noise in the output image. Second, under low light, the log portion of the circuit is slow to respond, leading to lag. Third, a logarithmic representation of the signal in the voltage domain (or charge domain) means that small variations in signal due to fixed pattern noise leads to large variations in the represented signal.
Linear approaches have also been described where the integration time is varied during a frame to generate several different signals. This approach has architectural problems if the pixel is read out at different points in time since data must be stored in an on-board memory before the signals can be fused together. Another approach is to integrate two different signals in the pixel, one with low gain and one with high gain. However, the low gain portion of the pixel often presents color separation processing problems.

Wide dynamic range active pixel with knee response


After a gate insulating film, a gate electrode and an on-gate protective layer have been formed in this order on an Si substrate, lightly-doped source/drain regions are formed in the substrate. First and second sidewalls are formed on the sides of the gate electrode and then heavily-doped source/drain regions are formed by implanting dopant ions using these sidewalls as a mask. After the second sidewall has been selectively removed, pocket implanted regions are formed and an overall protective film is deposited. Thereafter, an interlevel dielectric film is deposited, contact holes are formed to reach the heavily-doped source/drain regions and then plug electrodes are formed. Since the second sidewall has already been removed when the overall protective film is deposited, the gap between adjacent gate electrodes is not completely filled in. Accordingly, it is possible to provide a method for fabricating a semiconductor device contributing to device miniaturization without causing a shortcircuit between the gate electrode and a contact member.

The present invention relates to a method for fabricating a semiconductor device including self-aligned contacts.
In recent years, when contact members are formed to be interconnected to the source/drain regions of an MOS transistor, a self-aligned contact (SAC) structure is sometimes used to further increase the density of devices integrated on a chip. Specifically, in such a structure, a sidewall, which has been used for forming an LDD structure, is used again as an etch stopper for forming contacts in a self-aligned manner.
FIGS. 7(a) through 7(d) are cross-sectional views illustrating a conventional method for fabricating an MOS transistor with a known self-aligned contact structure. An LDD structure is often used recently for a transistor to meet the downsizing requirement. According to an ordinary method for fabricating such a transistor with an LDD structure, a sidewall is formed on a side of a gate electrode and heavily doped source/drain regions are formed by implanting ions into a substrate with that sidewall used as a mask.
First, in the process step shown in FIG. 7(a), a gate oxide film 102 (e.g., a thermal oxide film), a polysilicon film 103 for forming a gate electrode and a silicon nitride film 104 are formed in this order on a semiconductor substrate 101. And then a resist film 105 for patterning the gate is formed on the silicon nitride film 104.
Next, in the process step shown in FIG. 7(b), the silicon nitride film 104 and polysilicon film 103 are etched in this order using the resist film 105 as an etching mask, thereby forming an on-gate protective layer 104a and a gate electrode 103a. Thereafter, dopant ions are implanted into the semiconductor substrate 101 using the gate electrode 103a and the on-gate protective layer 104a as a mask, thereby forming lightly-doped source/drain regions 106. In this process step, phosphorus or arsenic ions are implanted to form an n-channel MOS transistor, or boron ions are implanted to form a p-channel MOS transistor. Then, a CVD oxide film 107 and a CVD nitride film 108 are deposited in this order over the substrate.
Subsequently, in the process step shown in FIG. 7(c), the CVD oxide film 107 and CVD nitride film 108 are dry-etched anisotropically to form an oxide sidewall 107a and a nitride sidewall 108a on a side of the gate electrode 103a.
Thereafter, in the process step shown in FIG. 7(d), dopant ions are implanted into the semiconductor substrate 101 using the gate electrode 103a and the oxide and nitride sidewalls 107a and 108a as a mask, thereby forming heavily-doped source/drain regions 109. In this process step, phosphorus or arsenic ions are implanted to form an n-channel MOS transistor, or boron ions are implanted to form a p-channel MOS transistor. In this manner, an MOS transistor with an LDD structure is completed.
In a self-aligned contact structure, the nitride sidewall 108a formed in the above-described manner is used as an etch stopper in the process step of forming contact holes, thereby preventing the gate electrode from coming into electrical contact with the contact members.
FIG. 8 illustrates an exemplary cross section of an MOS transistor in which contact members have been formed. As shown in FIG. 8, an interlevel dielectric film 110 of silicon dioxide is deposited over the MOS transistor with the LDD structure shown in FIG. 7(d), and then planarized. Thereafter, contact holes are formed in the interlevel dielectric film 110 by photolithography and etching techniques so as to reach the heavily-doped source/drain regions 109. In this process step, even if part of a contact hole interferes with the on-gate protective layer 104a or the nitride sidewall 108a, the on-gate protective layer 104a or the nitride sidewall 108a is hardly etched. This is because the etch selectivity of the SiO2 interlevel dielectric film 110 to the SiN on-gate protective layer 104a or the nitride sidewall 108a is high. In other words, since the on-gate protective layer 104a and the nitride sidewall 108a serve as an etch stopper in the process step of forming contact holes, the gate electrode 103a can be protected. Thereafter, the contact holes are filled in with plug electrodes 111 and an interconnection layer (not shown) is formed thereon.
The nitride sidewall 108a is used not only as an ion implant mask for forming the heavily doped source/drain regions 109, but also as an etch stopper for protecting the gate electrode 103a in the process step of forming self-aligned contacts during the fabrication of an MOS transistor with SAC and LDD structures. However, it is already known that the direct contact of the nitride sidewall 108a with the side of the gate electrode 103a is likely to deteriorate the characteristics of the transistor. Thus, in the illustrated example, the thin oxide sidewall 107a is interposed between the gate electrode 103a and the nitride sidewall 108a.
However, if a contact hole is formed to reach a region above the gate electrode 103a as shown in FIG. 8, then the upper edge of the oxide sidewall 107a is exposed inside the contact hole. And if that edge of the oxide sidewall 107a is etched away, then the resultant gap between the on-gate protective layer 104a and the nitride sidewall 108a is likely to be further removed. As a result, the contact hole might possibly reach the gate electrode 103a. That is to say, the plug electrode 111 as a contact member might be electrically short-circuited with the gate electrode 103a.
To solve such a problem, the process steps shown in FIGS. 9(a) and 9(b) are carried out after the MOS transistor has been formed by performing the process steps shown in FIGS. 7(a) through 7(d). Specifically, the MOS transistor is covered with a relatively thick CVD nitride film 112, an interlevel dielectric film 110 is deposited over the entire surface of the substrate, and then contact holes are formed in the interlevel dielectric film 110. In such a case, the progress of etching is blocked by the CVD nitride film 112 by the time the contact hole has gone through the interlevel dielectric film 110 as shown in FIG. 9(b). Accordingly, it is possible to prevent the contact hole from reaching the gate electrode 103a with certainty.
The conventional process for fabricating a semiconductor device with an SAC structure, however, has the following drawbacks.
Specifically, if a relatively thick CVD nitride film 112 is deposited, then the gap between a pair of gate electrodes 103a for adjacent MOS transistors might be completely filled in with the CVD nitride film 112 as shown in FIG. 10. In general, since the gate length and pitch have recently been reduced to about 0.15 xcexcm and about 0.4 xcexcm, respectively, the gap between the gates is as small as approximately 0.25 xcexcm. In this particular LDD/SAC structure, the gap gets even smaller when taking the respective thicknesses of the oxide and nitride sidewalls into account. Accordingly, the gap is very likely to be totally filled in. In such a situation, it is virtually impossible to form such contact holes as reaching the source/drain regions 109 located under the gaps filled in with the CVD nitride film 112 as shown in FIG. 10. This is because other members might be adversely affected if such contact holes are provided.
An object of the present invention is providing a method for fabricating a semiconductor device, which functions as an MIS transistor with an SAC structure and can contribute to device miniaturization, by forming self-aligned contacts while improving the reliability thereof.
A method for fabricating a semiconductor device according to the present invention includes the steps of: a) forming a gate insulating film, a gate electrode and an on-gate protective layer in this order on a semiconductor substrate; b) implanting dopant ions into the semiconductor substrate using the gate electrode and the on-gate protective layer as a mask, thereby forming lightly-doped regions in the semiconductor substrate; c) depositing a first insulating film and a masking film in this order over the substrate, the masking film being able to be etched selectively with respect to the first insulating film; d) anisotropically etching the first insulating film and the masking film such that a first sidewall is formed on respective sides of the gate electrode and the on-gate protective layer by partially leaving the first insulating film thereon and that a second sidewall is formed on the first sidewall by partially leaving the masking film thereon; e) implanting dopant ions into the semiconductor substrate using the on-gate protective layer, the gate electrode and the first and second sidewalls as a mask, thereby forming heavily-doped regions in the semiconductor substrate; f) selectively removing the second sidewall so as to leave the first sidewall after the step e) has been performed; g) depositing a second insulating film over the substrate so as cover at least the on-gate protective layer and the first sidewall after the step f) has been performed; h) depositing an interlevel dielectric film over the substrate after the step g) has been performed, the interlevel dielectric film being made of a material that is able to be etched selectively with respect to the second insulating film; i) etching the interlevel dielectric film to form therein openings reaching the heavily-doped regions; and j) filling the openings in with plug electrodes made of a conductive material.
According to this method, since the second sidewall still exists in the step e), the heavily-doped regions can be formed in respective regions that are offset from the lightly-doped regions, thus obtaining an MIS transistor with a so-called LDD structure. On the other hand, since the second sidewall no longer exists in the step g), a sufficiently wide gap is ensured between a pair of gate electrodes of adjacent transistors. And it is possible to prevent the gap from being completely filled in with the second insulating film. Accordingly, a highly reliable, downsized semiconductor device with an SAC structure can be provided thanks to the existence of the second insulating film.
In one embodiment of the present invention, a Non-Doped Silicate Glass (NSG)film may be formed as the first insulating film and a PSG or BPSG film may be formed as the masking film in the step c).
In such an embodiment, a predetermined etch selectivity is ensured between the first and second sidewalls without causing any adverse effects such as a stress in the operating region of the semiconductor device.
In this particular embodiment, if the step f) is performed by HF vapor phase etching, only the second sidewall can be removed at a high etch selectivity.
In another embodiment, the method may further include the step of implanting dopant ions into the semiconductor substrate using the on-gate protective layer, the gate electrode and the first sidewall as a mask to form pocket implanted layers in the semiconductor substrate between the steps f) and g).
In such an embodiment, a semiconductor device can be formed with its punchthrough stop capability enhanced.
In still another embodiment, the method may further include, between the steps e) and f), the steps of: forming a protective film over the semiconductor substrate, the protective film being used as a mask for a non-silicide region; forming lightly-doped regions for preventing leakage under the heavily-doped regions using the protective film as a mask; selectively removing part of the protective film, which covers a silicide region, so as to leave the other part thereof covering the non-silicide region; and forming a silicide layer on the surface of the heavily-doped regions.
In such an embodiment, the lightly-doped regions for preventing leakage can be formed by using the protective film, which is also used as a mask for a silicidation process step. These lightly-doped regions for preventing leakage can reduce not only leakage current, but also junction capacitance. In addition, the silicide layer can reduce sheet resistance. As a result, the operating speed of the semiconductor device can be further increased.
A second method for fabricating a semiconductor device according to the present invention includes the steps of: a) forming a gate insulating film, a gate electrode and an on-gate protective layer in this order on a semiconductor substrate; b) depositing a first insulating film and a masking film in this order over the substrate, the masking film being able to be etched selectively with respect to the first insulating film; c) anisotropically etching the first insulating film and the masking film such that a first sidewall is formed on respective sides of the gate electrode and the on-gate protective layer by partially leaving the first insulating film thereon and that a second sidewall is formed on the first sidewall by partially leaving the masking film thereon; d) implanting dopant ions into the semiconductor substrate using the on-gate protective layer, the gate electrode and the first and second sidewalls as a mask, thereby forming heavily-doped regions in the semiconductor substrate; e) selectively removing the second sidewall so as to leave the first sidewall after the step d) has been performed; f) implanting dopant ions into the semiconductor substrate using the gate electrode, the on-gate protective layer and the first sidewall as a mask, thereby forming lightly-doped regions in the semiconductor substrate; g) depositing a second insulating film over the substrate so as cover at least the on-gate protective layer and the first sidewall after the step f) has been performed; h) depositing an interlevel dielectric film over the substrate after the step g) has been performed, the interlevel dielectric film being made of a material that is able to be etched selectively with respect to the second insulating film; i) etching the interlevel dielectric film to form therein openings reaching the heavily-doped regions; and j) filling the openings in with plug electrodes made of a conductive material.
According to the second method, the same effects as those attained by the first method are also attainable as a matter of principle. In addition, according to the second method, the lightly-doped regions are formed after the heavily-doped regions have been formed. Thus, annealing for activating the dopant in the heavily-doped regions can be conducted at a temperature high enough to increase the diffusion depth thereof sufficiently. As a result, the junction capacitance can be reduced. And at the same time, annealing for activating the dopant in the lightly-doped regions can be conducted at either a low temperature or a high temperature but for just a short period of time so as to suppress the short channel effects.
The same additional process steps as those of the first method are also applicable to the second method.

Matsushita Electric Industrial Co., Ltd.


A master medium is utilized in a magnetic transfer apparatus. The master medium is superposed on a blank magnetic medium. A predetermined magnetic field is then applied to the master medium. The magnetic flux leaks from the master medium between adjacent magnetic pieces on the master medium. The leaked magnetic flux acts on the magnetic medium. The magnetization is accordingly established on the surface of the magnetic medium. Here, spaces can be reduced between the adjacent magnetic pieces on the master medium. Magnetization of a sufficient intensity can reliably be established on the magnetic medium.

1. Field of the Invention
The present invention relates to a magnetic transfer apparatus designed to establish a servo region on a magnetic recording medium such as a magnetic disk, for example. The servo region serves to define recording tracks on the magnetic recording medium in a magnetic storage device such as a hard disk drive (HDD), for example.
2. Description of the Prior Art
A preamble region, a servo mark region and a servo data region are in this sequence defined over a servo region on a magnetic recording disk. The preamble region includes alternate positive and negative magnetic poles equally spaced in the circumferential direction. The servo data region includes magnetic poles arranged in accordance with a predetermined pattern varying in the radial direction. A synchronization signal can be obtained in the HDD based on the magnetic information derived from the preamble region. A head is positioned right above a recording track at a higher accuracy based on the magnetic information derived from the servo data region.
When the magnetic poles are to be established on a magnetic recording disk, a blank magnetic disk is set in a magnetic transfer apparatus. A master medium is superposed on the blank magnetic disk in the magnetic transfer apparatus. Magnetic pieces and non-magnetic pieces are alternately arranged in the master medium in accordance with the arrangement of the magnetic poles. When a magnetic field is applied to the master medium in a set direction, leakage of magnetic flux is induced between the adjacent magnetic pieces. This leaked magnetic flux serves to establish magnetization in the magnetic disk.
No magnetic pieces are formed in the master medium at a position corresponding to the servo mark region of the magnetic recording disk. A larger non-magnetic space is defined between the magnetic pieces corresponding to the preamble region and the magnetic pieces corresponding to the servo data region. Leakage of a weak magnetic field is thus induced between the magnetic pieces across the non-magnetic space. The leaked weak magnetic field acts on the servo mark region on the magnetic disk, so that the weak magnetic pole will be established in the servo mark region adjacent the servo data region. Such a weak magnetic pole has a polarity different from that of the first magnetic pole of the servo data region and the intensity smaller than that of the first magnetic pole. This weak magnetic pole is often mistaken for the first magnetic pole of the servo data region. This mistake will disturb the servo control of the head. The head cannot keep following recording tracks on the magnetic disk.

Master medium for magnetic transfer and magnetic disk and magnetic disk drive


An eccentric mount is used to adjust floatation force applied to a cutter bar of a pull type mower when the cut height of the cutter bar is changed. The eccentric mount is rotated to increase or decrease the tension on springs suspending the cutter bar. The eccentric mount is calibrated to adjust incrementally in relation to the position of the skid shoes to provide a floatation force to the cutter bar appropriate to the cutter height as determined by the spring shoe setting.

It is advantageous to equip pull-type mowers with adjustable skid shoes. Adjustable skid shoes allow an operator to make adjustments to the mower cut height by raising or lowering the skid shoes on the cutter bar. In an example embodiment, the adjustment is effected by pivoting the skid shoe to an orientation angle corresponding to the desired cutter height and then fixing the angle of the skid shoe. These adjustments, by design, do not require tools and can be made quickly and easily by one operator. While it is desirable to have to ability to quickly adjust the cut height of the cutter bar, these adjustments can greatly affect the floatation (suspension) of the cutter bar. When the skid shoes are adjusted down in the adjustment array, the cutter bar cut height rises, which in turn reduces the elongation of floatation springs which compensate for a portion of the weight of the cutter bar. This adjustment, in turn, reduces the floatation force the springs apply to the cutter bar, thus increasing the ground force of the cutter bar. This problem is exacerbated by the design of most adjustable skid shoes, which tend to have a much smaller ground contact area than traditional skid shoes mounted over very nearly the entirety of the bottom of the cutter bar.
There is clearly an opportunity to provide a system which will allow rapid changes in the floatation setting of spring floatation systems on pull-type mowers to provide an optimized floatation setting when making adjustments to cut height with adjustable skid shoes.


Disclosed herein are high density wiring boards useful in computers, communication equipment and the like. They include a layer for bypassing heat to be generated. Heat generated at a conductor and/or a resistor in each wiring board is allowed to spread out evenly via the heat bypass layer.

a. Field of the Invention
The present invention relates to a structure for a high density wiring board useful in computers, communication equipment or the like.
b. Description of the Related Art
The conventional structure of a wiring board with insulation layers is shown in FIG. 2A. In the conventional structure, as depicted in the drawing, an organic insulation layer 2 and a conductor 4, which have been subjected to patterning, are laminated on a substrate 1, and another organic insulation layer 2a having holes therein, another conductor 4a to which patterning has been applied, and a further organic layer 2b are laminated further on the organic insulation layer 2 and the conductor 4.
When circuits are formed in multiple layers, the above structure however involves the problem that cracks 7 are formed as illustrated in FIG. 2B. In the step in which the upper conductive layer 4a or the middle organic insulation layer 2a are formed, shape-attributed large stress 6 may often be applied to the underlying conductor, the insulation layer and the like in the directions as indicated by arrows 12 in FIG. 2B. As a result, cracks may be formed at the areas of bonding between pattern edge portions 13 and 14 of the respective conductive layers and their associated underlying layers. The cracks 7 may be formed in layers such as the organic insulation layers 2 and 2a and the conductive layer 4 as indicated in FIG. 2B.
When such a crack 7 is formed in the conductive layer 4 or the organic insulation layers 2 and 2a, the state of contact at the cracked portion varies upon passing a current or under vibrations so that noise may be generated or disconnection may take place. This may lead to problems such as the fabrication yield being reduced and the product reliability being lowered.
As a means for overcoming the above problems, a technique has been disclosed in Japanese Patent Laid-Open No. 61-12357. The structure of a wiring board according to the above technique is shown in FIG. 3. The wiring board according to this conventional technique has the structure that a stress supportable layer 5 made of Ta.sub.2 O.sub.5 or SiO.sub.2 is provided between an organic insulation layer 2 and a conductive layer 4. An additional stress supportable layer 5a is also interposed between another organic insulation layer 2a and another conductive layer 4a. These stress supportable layers 5 and 5a make it possible to withstand thermal stress produced during the steps in which insulation layers are to be formed on the stress supportable layers 5 and 5a respectively.
The stress supportable layers according to the conventional technique are effective as layers for withstanding thermal stress. The conventional technique is however accompanied by the following problem. Such a wiring board may internally give off heat when a current of electricity is fed to the board. No consideration whatsoever is however taken for such heat in the above conventional technique.
Referring back to FIG. 3, a description will be made of a case in which such heat has been produced. In FIG. 3, the stress supportable layer 5 is provided between the organic insulation layer 2 and the conductive layer 4, both of which are formed on a substrate 1. Further, the stress supportable layer 5a is provided between the organic insulation layer 2a and the conductive layer 4a.
These stress supportable layers 5 and 5a can withstand thermal stress to be produced in the steps in which overlying insulation layers will be formed respectively. However, no consideration is made for the diffusion of heat to be produced during feeding of electrical power to the substrate. Due to localized generation of heat in the course of the feeding of the electrical power, heat will be accumulated in the stress supportable layers 5 and 5a and organic insulation layers 2 and 2a so that the temperature of these layers will arise. As a result, these layers will develop a thermal expansion as indicated at numeral 11. Due to a difference in the coefficient of thermal expansion between these layers, cracks and separation occur in the stress supportable layer 5. In addition, cracks and the like also take place in the conductive layer 4. They are indicated as cracks 7 in FIG. 3.
Therefore, the wiring board described above would have low reliability. Further, a product making use of this wiring board, such as a computer, is prone to trouble or malfunction.

Wiring board provided with a heat bypass layer


A multi-stage setting tool actuated by hydrostatic pressure downhole is provided with a selectable force-time profile during setting. A first port opens a first piston chamber to hydrostatic pressure which drives a first piston. A force-transmitting member, attached to the piston, is driven in response to the fluid pressure increase in the chamber. The process is repeated with sequential ports and piston chambers. A settable tool is set in response to the driving of the force-transmitting member by the pistons. The combined stroke distances and forces of the pistons are selected to set the tool. Opening of the ports can occur in response to electrical signal and can be conditional on occurrence of a selected event or condition. Speed of setting can be regulated.

Without limiting the scope of the present inventions, their background is described with reference to setting tools, downhole force generators and downhole power units and improvements thereto. It is typical in hydrocarbon wells to "set" or actuate downhole tools, such as packers, bridge plugs, high-expansion gauge hangers, straddles, wellhead plugs, cement retainers, through-tubing plugs, etc. Additionally, some of these tools are later "unset" for retrieval. Setting tools are run-in, and in some cases retrieved, using various conveyance methods such as a wireline, slickline, or coiled tubing. The generic name for the running tool which provides the large setting forces required is a setting tool. Several types of setting tool and downhole force generators (DFG) are known in the art, including those operated mechanically, electrically, chemically, explosively, hydraulically, electro-mechanically, etc.
One type of DFG uses electro-mechanical power, where the DFG converts electrical power, typically provided by a battery unit, into mechanical movement, typically rotary or longitudinal movement of a shaft or power rod. One such setting tool is the DPU (trade name) Downhole Power Unit available from Halliburton Energy Services, Inc. Halliburton's DPU provides an even stroke with a force profile that gradually builds over time. However, the DPU requires a large stack of batteries to drive the motor. The power output needed from the batteries limits the maximum operating temperature for the batteries and for the tool. The use of relatively large quantities of lithium batteries, for higher temperature operations, limits the ability to easily transport the DPU and is a significant cost driver.
Additionally, some industry pyrotechnic setting tools, such as the Baker 20 Setting Tool, available from Baker Oil Tools, Inc., utilize a pyrotechnic material to generated pressure. A chamber containing a high pressure gas houses a floating hydraulic piston with an oil filled chamber below. The hydraulic oil is pressured by the expanding gas, providing hydraulic power which performs the setting task. Disadvantages to such pyrotechnic setting tools include compliance with extensive and costly regulations, including special shipping and handling by trained personnel, storage on licensed premises, third party notification when shipping, inspections by official personnel, and routine inspections. Further, The Baker 20 setting tool delivers peak force at the beginning of the stroke with diminishing force afterwards, especially as the gas generated by the pyrotechnic reaction cools.
Hydrostatic setting tools convert ambient hydrostatic pressure in a wellbore into hydraulic force to set the downhole tool. But many prior art hydraulic setting tools suffer from a very quick force-time profile, where the hydrostatic pressure is applied very quickly. The components in the setting tool then move in response at rapid speeds, which can damage sealing elements and break metallic components.
Further disclosure relating to downhole force generators, their operation and construction, can be found in the following, which are each incorporated herein for all purposes: U.S. Pat. No. 7,051,810 to Clemens, filed Sep. 15, 2003; U.S. Pat. No. 7,367,397 to Clemens, filed Jan. 5, 2006; U.S. Pat. No. 7,467,661 to Gordon, filed Jun. 1, 2006; U.S. Pat. No. 7,000,705 to Baker, filed Sep. 3, 2003; U.S. Pat. No. 7,891,432 to Assal, filed Feb. 26, 2008; U.S. Patent Application Publication No. 2011/0168403 to Patel, filed Jan. 7, 2011; U.S. Patent Application Publication Nos. 2011/0073328 to Clemens, filed Sep. 23, 2010; 2011/0073329 to Clemens, filed Sep. 23, 2010; 2011/0073310 to Clemens, filed Sep. 23, 2010; and International Application No. PCT/US2012/51545, to Halliburton Energy Services, Inc., filed Aug. 20, 2012.
It is an object of the invention then, to provide a downhole force generator or setting tool with a relatively low cost. It is a further object of the invention to provide a DFG capable of operation in high temperature environments. It is a further object of the invention to provide a DFG which delivers high force over a long stroke. It is a further object of the invention to provide a DFG having a customizable force-time profile. It is a further object of this invention to provide a setting tool which is not subject to the regulations and restrictions of typical pyrotechnic setting tools. Other objects and benefits will be apparent to those of skill in the art.

Multi-stage setting tool with controlled force-time profile


The present invention relates to a polycarbonate resin composition which comprises a polycarbonate resin having the repeating unit that is represented by the following general formula (1) and a hydroxyl group at terminal thereof and has the concentration of the terminal hydroxyl group of 1000 ppm or more.

1. Field of the Invention
The present invention relates to a polycarbonate resin composition comprising a polycarbonate resin with a specific structure and a method of producing the same. Specifically, the present invention relates to a polycarbonate resin composition comprising a polycarbonate resin with a specific structure so that it is appropriate as an optical material having high transparency, high resistance to heat, high refractive index and low birefringence, and a method of producing the same.
2. Description of the Related Art
A polycarbonate resin which is obtained by reacting 2,2-bis(4-hydroxyphenyl)propane (common name: bisphenol A) with phosgene or carbonic acid diester has an excellent resistance to heat and excellent transparency. In addition, as having an excellent mechanical property such as impact resistance, etc., it is widely used not only as a structural material but also as an optical material like a plastic optical product including various lenses, prisms, optical disc substrates, optical fibers and the like and an optical film.
However, since the conventional aromatic polycarbonate resins are a material having high optical elasticity and low fluidity, it has a problem that birefringence is high due to molecular orientation during molding and residual stress. Thus, when an optical material consisting of conventional aromatic polycarbonate resin is molded, a method of using a resin with relatively low molecular weight to improve fluidity and molding at high temperature to reduce birefringence of a product has been used. However, with the conventional aromatic polycarbonate resins, birefringence can be only limitedly reduced even when such method is employed. Thus, in accordance with enlarged use of an optical material in recent days, development of a material which has even lower optical elasticity coefficient and high fluidity has been really waited for in several optical material fields. In this connection, development of a resin having even smaller birefringence has been carried out.
Meanwhile, if an optical material has high refractive index, even smaller curvature of the surface of a lens element can be achieved. As a result, aberration amount occurring on the surface can be reduced and small scale and lightweight production of a lens system can be achieved based on reduction in the number of lenses, reduction in the eccentric sensitivity of a lens and reduction in the thickness of a lens. In addition, an eyeglass lens can provide excellent appearance as thinning of a lens with the same power of eyeglasses can be achieved.
Thus, development of an optical resin having high refractive index and low birefringence has been carried out, and as such optical resin having high refractive index and low birefringence, a wholly aromatic polycarbonate resin copolymer using bisphenols with a fluorene structure has been studied (see, Patent Document Nos. 1 and 2 below).
Further, a homopolycarbonate resin of ether diols having a phenol skeleton and a fluorene structure, or a copolymer of such resins and bisphenols is disclosed (see, Patent Document Nos. 3 and 4 below).
Still further, a copolymer of bisphenols having a fluorene structure and tricyclodecane[5.2.1.02,6]dimethanol is also suggested (see, Patent Document No. 5 below).    [Patent Document No. 1] Japanese Patent Application Laid-Open (JP-A) No. 6-25398    [Patent Document No. 2] JP-A No. 7-109342    [Patent Document No. 3] JP-A No. 10-101787    [Patent Document No. 4] JP-A No. 10-101786    [Patent Document No. 5] JP-A No. 2000-169573

Polycarbonate resin composition and method of producing the same