The present disclosure relates to a wearable motion detection device (12) configured for detecting body-to-ground proximity, and to a related method. The motion detection device (12) comprising a capacitance detection unit (70) arranged to detect body-to-ground capacitance, the capacitance detection unit (70) comprising a first electrode (30) arranged to contact a body portion (16) of a monitored subject, when the device (12) is worn, a second electrode (32) that is arranged separately from but operatively connected with the first electrode (30), a shield electrode (34) that is arranged to shield the second electrode (32) from the first electrode (30), the device (12) further comprising a control unit (74) arranged to determine, under consideration of a body-to-ground capacitance signal provided by the capacitance detection unit (70), whether a fall event occurs. The present disclosure further relates to a corresponding computer program for implementing a motion detection method.

WO 2015/028283 A1 discloses a fall detection system and a fall detection method, wherein the system comprises a wearable or portable user device configured to be worn or carried by a user, the user device comprising a proximity sensor for measuring the proximity of the user device to the ground or the floor; and a movement sensor for measuring the movements of the user; the fall detection system further comprising a processing unit configured to process the measurements from the movement sensor to detect a potential fall; activate the proximity sensor if a potential fall is detected; and process the measurements from the proximity sensor to determine if the user has fallen.
In accordance with an exemplary embodiment of WO 2015/028283 A1, the proximity sensor is arranged for measuring changes in capacitance or inductance to estimate the proximity to an object. Changes in the electric or magnetic field of a capacitive or inductive proximity sensor, respectively, can indicate whether an object is in proximity to the sensor.
Fall events affect a huge number of people each year and result in significant injuries, particularly among the elderly. In fact, it has been estimated that falls are one of the top causes of death in elderly people. A fall may be defined as a sudden, uncontrolled and unintentional downward displacement of the body to the ground, followed by an impact, after which the body typically stays down on the ground. In case the fallen person is still fully conscious, he or she may push an emergency switch to ask for help. However, quite often patients are somewhat disoriented or even injured their heads and/or arms so that no deliberate alarm call may be initiated.
Therefore, automatic fall detection systems have been proposed. Conventional automatic motion detection devices are widely known and utilized in patient care environments, more particularly in the context of elderly care and geriatric care. As used herein, motion detection devices include, but are not limited to, fall detection devices. Fall detection devices may also be used in the field of child care, animal care, etc. Fall detection devices may be utilized for sleep monitoring, but also for activity monitoring.
In respect of the fall detection as such, there are several basic technical principles. Currently, fall detection systems can be divided into three main classes: body-worn, ambient-based, and a combination of the latter two.
For instance, fall detection devices are known that simply detect an impact when a monitored subject hits the ground or floor. These devices may implement conventional contact switches, for instance. Further, acceleration based devices are known that basically sense a fall event when a defined (e.g., fall acceleration or speed) kinematic threshold is met. Also combinations thereof may be envisaged.
In accordance with one type, fall detection devices are arranged as body-wearable devices. However, also stationary (remote) fall detection devices are known that may utilize optical sensing. Further, also combinations of body-wearable units and stationary units may be envisaged which may of course cause considerable manufacturing and operating efforts. Moreover, standard fall detection devices often show poor performance when discriminating real fall events from deliberate movements of the monitored subject, for instance quick movements of body limbs. Further, also relative movements between the detection device and an attachment portion (e.g. the wrist) of the monitored subject may have an adverse effect on performance, accuracy, and reliability. When the fall detection device slips out of position, a pseudo-movement may be detected, this may trigger a false alert.
Body-worn fall detection systems typically make use of on-board inertial sensors such as tri-axial accelerometers, gyroscopes, and suchlike. A combination of features derived from these signals is used to detect whether a fall has occurred at any given moment. Optionally, other sensors such as a pressure sensor can be employed to detect height changes.
Ambient-based approaches to fall detection typically employ a number of sensors placed throughout a coverage area of relevance such as the subject's premises or the clinical environment such as a hospital. These sensors include, but are not limited to video cameras and passive infrared (PIR) sensors.
Further, simple leash-based devices are known which are arranged as breakaway detection devices and may detect undesired removals from a defined location or range which triggers an alert. However, these devices are often experienced as considerably uncomfortable, error-prone and also somewhat motion restricting. Further, a breakaway-based fall detection device is basically not capable of discriminating a (horizontal) moving-away event from a (vertical) fall event.
It has been observed that sufficiently high accuracy rates may be obtained for sensors worn basically proximate to the trunk/torso and/or head of the monitored subject. The advantage of such locations is that it is symmetric (no bias due to brain function lateralization, i.e. right/left-handedness) and mainly dominated by larger and slower movements such as walking and changing postures. In particular, a combination of features based on height change and impact can exhibit better discriminative performance.
Challenges may arise when implementing such a fall detection system in a wrist-worn device. The wrists/arms of the subject are prone to faster movements and tend to undergo a larger number of pushes, impacts during daily life than the subject's torso (e.g. reaching for a twisting doorknob). Furthermore, unlike a sensor that is located on the torso or head, the posture of a person after a potential fall often cannot be reliably detected from a wrist-worn device solely employing inertial sensors due to the many degrees of freedom and position of the wrist with respect to the body.
Therefore, another approach to fall detection is to use information about the device's proximity to a surface in conjunction with inertial (acceleration) sensor signal features. After a person has fallen and an impact is detected from the accelerometer signal, or when the person (still) is falling, proximity or changes of proximity to a surface can be measured, where this surface is assumed to be the ground or floor.
There is still a need for improved or alternative motion and fall detection devices, algorithms, and related methods that further enhance the detecting reliability and that are applicable to wrist-worn monitoring systems.

Motion detection device and corresponding method

Wilhelmus Andreas Marinus Arnoldus Maria


A mechanical key and lock set with a rotating cylinder includes an electronic interlock which is responsive to the insertion of a mated key in the cylinder and proper rotation of the cylinder. A sensor is placed in communication with the cylinder and senses proper rotation of the cylinder to generate an activation signal. Systems controlled by the lock cannot be enabled without the generation of the activation signal. Fail safe blocking circuitry is placed in communication with the activation signal generator and in the event the actuation signal is attempted to be read in an unauthorized manner without properly rotating the cylinder, the blocking circuitry is functional to preclude reading.

This invention is generally related to lock and key sets having a rotating cylinder lock and is particularly directed to an electronic interlock to be used in conjunction with a rotating cylinder lock mechanism.
Over the last several years, it has become increasingly desirable to improve the anti-tampering features of lock and key sets. This is particularly true with respect to automobile ignition systems where auto theft has almost developed into an art form. Skilled thieves can often "hot wire" an automobile ignition in a matter of a few seconds. Typically, the key and cylinder lock for engaging and energizing the ignition system is either bypassed or pulled in order to facilitate the theft. To combat this, automotive manufacturers have incorporated a variety of vehicular anti-tampering systems (VATS) to make vehicle theft more difficult. Numerous of these include electrical or electronic interlocks working in cooperation with a mechanical lock system. For example, one such system includes a resistor element on the mechanical key and a circuit connection contained within the cylinder of the key lock. When a mated key with the proper resistance level is inserted in the cylinder, the circuit is closed and the proper coded voltage is produced, permitting the ignition to energize in typical fashion when the cylinder is rotated. If a key with an improper resistance level is used, the proper voltage is not produced and rotation of the cylinder will not enable the ignition system.
In another example, a sensor is placed at a certain point in the rotation of the cylinder and senses proper rotation of the cylinder to produce an ignition activation signal. Any attempt to start the ignition without first properly rotating the cylinder is ineffective since proper rotation is required to generate the ignition activation signal. Efforts have been made to override the electronic interlock by deciphering the coded resistance values and duplicating them in order to engage the ignition.
With the development and availability of onboard computer systems, electronic interlocks are becoming more widely available and more sophisticated at a rapid rate. For example, if an attempt is made to duplicate a resistance level required to deactivate an electronic interlock, and the attempt is not successful, the computer system can be programmed to shut down the ignition circuitry for a delay period of 2.5 minutes more or less. If ten resistance levels are available for a particular car system, the thief must try as many as ten different duplicates before he can be assured of starting the car. On the average, this would increase the amount of time it takes to "hot wire" a car from a few seconds to ten to fifteen minutes or more. In many cases, a ten minute delay is more than sufficient to foil a theft attempt.
While the need for VATS ignitions in automobiles has created the development of the electronic interlock technology, it will be readily apparent that there is a wide variety of uses for which the interlock systems can be incorporated. The electronic interlock systems for vehicle ignition circuits are readily adaptable to any lock and key set utilizing a key with a rotating cylinder lock.
While the systems of the prior art have greatly enhanced the anti-theft features of lock systems, it is desirable to improve upon the systems by making it more difficult, if not impossible, for a thief to read and decode the electronic or resistance level codes utilized in connection with the interlock. In this regard, developing technology includes a fail safe system in combination with the interlock for precluding unauthorized decoding of the interlock code by blocking the signal whenever an attempt is made to unlock the lock in an unauthorized manner. One example of such a system is illustrated as prior art in FIG. 1 of the drawing. As there shown, an electronic interlock system comprising a sensor circuit in series with a coded resistor and a fail safe system is coupled to a VATS module provided by the automobile manufacturer. When a mated key is inserted in the ignition lock cylinder and the cylinder is rotated, a specific point on the cylinder passes by a sensor generating a readable signal which is introduced into the comparator circuit of the VATS module. When the signal is first received by the comparator, it is programmed into the memory and thereafter, the generated signal is compared with the stored signal to determine the presence of an acceptable ignition sequence. Upon an acceptable comparison, the ignition circuitry and fuel delivery system are energized and the vehicle may be started. The fail safe system of FIG. 1 includes a diode in series with the coded resistor for precluding unauthorized reading of the resistor level when a reverse voltage is placed across terminals B and C. While this system is successful in precluding the unauthorized reading of the coded resistor, it has several disadvantages. First, by using a fail safe system that is in series with the coded resistor, the voltage drop across the diode becomes part of the decoded signal read by the reader. In addition, most semi-conductor diodes are temperature sensitive, the coded signal varies substantially depending on ambient conditions. This requires that the width for each coded signal be increased, reducing the number of codes available to the interlock.

Fail safe system for a mechanical lock and key set with electrical interlock


Aspects of a method and system for enhancing efficiency by modulating power amplifier (PA) gain are presented. Aspects of the system may comprise a PA gain modulator that enables modification of an amplitude of a digital baseband signal. A baseband processor may enable computation of a first gain value based on the modification. The baseband processor may enable computation of a second gain value based on the first gain value. A PA may enable generation of an RF output signal based on the modified digital baseband signal and the second gain value.

A power amplifier (PA) circuit may be characterized by its mode, or "class" of operation. Exemplary classes include Class A, Class AB, and Class B. In Class A operation, a PA may operate in a conducting, or ON, state during 100% of the cycle, or the entire cycle, of the input signal. In Class A operation, the output signal from the PA is typically a scaled version of the input signal, where the scaling factor is a function of the gain associated with the PA circuit. However, for Class A operation, the PA is typically in a conducting state even when there is no input signal. Furthermore, even when the PA is amplifying an input signal, the efficiency of the PA may not exceed 50%.
In Class B operation, a PA may operate in a conducting state during 50%, or half, of the cycle of the input signal. This may result in large amounts of distortion of the input signal in the output signal. The higher efficiency of the Class B PA results from the PA being in a non-conducting, or OFF, state half of the time.
In Class AB operation, a PA may operate in a conducting state for greater than 50%, but less than 100%, of the cycle of the input signal. In Class AB operation, the PA may be more efficient than in Class A operation, but less efficient than in Class B operation. Furthermore, in Class AB operation, the PA may produce more distortion than in Class A operation, but less than in Class B operation.
When the peak input signal level to a PA circuit is large compared to the average input signal level, or high peak to average ratio, the PA circuit may be biased to accommodate the peak input signal level, PINMAX. The value of PDC may be set to enable generation of an RF signal output level from the PA circuit, PRFMAX, when the corresponding input signal level is PINMAX. Thus, efficiency of the PA circuit may be highest for a given value PDC when the RF signal output level from the PA circuit is PRFMAX. However, for high peak to average ratios, the input signal level is typically less than PINMAX for a substantial portion of the time that the PA circuit is operating. Therefore, the average RF signal output level, PRFAVG, may be significantly lower than PRFMAX. Consequently, the need to support high peak to average ratios may result in low efficiency for the PA circuit.
Further limitations and disadvantages of conventional and traditional approaches will become apparent to one of skill in the art, through comparison of such systems with some aspects of the present invention as set forth in the remainder of the present application with reference to the drawings.

Method and system for enhancing efficiency by modulating power amplifier gain


A device for mixing powdery, granular and/or pasty material, which device comprises a conical mixing vessel having a vertical axis, and at least one mixing screw that extends parallel to the inside wall of the mixing vessel. The mixing screw is mounted on a drive unit that extends into the mixing vessel, for rotation around its axis, and also revolves slowly around the innerside of the mixing vessel. A high speed rotor is mounted in a open cage which is hung from the drive unit. Completing the mixing device separate driving motors mounted outside the vessel, for driving the rotor and the mixing screw.

The invention relates to conical mixing devices including a motor driven mixing screw.
A device of this type is described in the non-prepublished PCT/NL/00186.
Certain cohesive products and those one that quickly form agglomerates are difficult to mix. Moreover, certain mixtures exacerbate the problem due to introduction of heat generated by friction between the rotor and the product being mixed.

Conical mixing device comprising at least one mixing screw and a fast rotating horizontal rotor on a vertical drive shaft


One embodiment of the present disclosure is directed to a mobile X-ray unit. The mobile X-ray unit may include a base accommodating a control unit for controlling an X-ray applicator and a power supply for supplying power to the X-ray applicator. The mobile X-ray unit may further include an arm associated with the base. The arm may be configured to support an X-ray applicator having an X-ray tube. The arm may be articuable. The X-ray tube may include a target element configured to generate an X-ray beam and a collimator configured to shape the X-ray beam. The target element may be disposed at a set distance from the collimator.

The incidence rate of skin cancer has substantially increased in the last decade of the 20th century. It is appreciated that over 1.3 million new skin cancers are diagnosed annually, which is increasing at a rate of about 5% per year. Increased exposure to the sun without skin protection and a decreased ozone layer are regarded as the main causes of this increase—a problem estimated to be costing over 1 billion Euros in annual medical treatment expenses. Over 80% of skin cancers occur in the head and neck regions with 50% occurring in patients over 60 years of age. It is expected that a portion of the senior population will double in year 2025 compared to the present demographics. Because of the growing incidence of skin cancer and increasing share of the senior population in the overall demographics, much focus has been placed on cancer treatments and cancer treatment logistics.
Non-proliferative cancers, which are defined by substantially superficial lesions, may be treated in different ways. In one example, non-proliferative cancers may be treated surgically. Surgery, however, may have certain drawbacks, such as, for example, long waiting lists, complications related to post-treatment care, and risk of infection. Alternatively, patients may undergo irradiation using electrons of soft X-rays. Irradiation may have an advantage of being non-invasive and of a short duration (a treatment session may be as short as 2 to 4 minutes). It will be appreciated that usually the integral treatments using radiotherapeutic techniques may require a number of sessions.
Recently, the use of a mobile and portable X-ray unit has been suggested, which may be used inside a hospital radiotherapy department. An embodiment of such a unit is described in US 2007/0076851. Existing X-ray units include an X-ray source and a filtering device having a plurality of filters rotatably arranged with respect to a focal point of the X-ray tube for changing filtering characteristics on demand. The plurality of filters are arranged in a filtering device, which is transversely arranged with respect to a longitudinal axis of the X-ray tube. These units, while effective, may have certain drawbacks. For example, X-ray beam characteristics may be affected by the internal geometry of the X-ray tube, leading to, for example, a broadened penumbra of the X-ray beam.


An apparatus for shielding a fence post from foreign elements includes a collar section with integral sidewalls, one detachable sidewall, a base extending about a perimeter of the collar section, and a mechanism for preventing fluid from traveling distally and medially of an outer wall of the fence post and an inner perimeter of the collar. The detachable sidewall is provided with oppositely spaced tongue portion and the collar section has a pair of grooves formed therein. The tongue and groove portions are slidably engageable with each other so that the apparatus can be assembled and disassembled by moving the detachable sidewall along a substantially vertical plane. The fluid blocking mechanism preferably includes a rubber seal contiguously positioned medially of the fence post and collar section.

1. Technical Field
This invention relates to outdoor post protectors and, more particularly, to a detachable protective cover for shielding a fence post from foreign elements.
2. Prior Art
Much of the residential and commercial property in this country uses fencing to provide privacy and/or define property lines. While the fencing itself is relatively maintenance-free, vegetation abutting such fencing, particularly lawns, requires regular and frequent maintenance in the form of trimming.
Many forms of fencing, particularly privacy fencing which uses square wooden fence posts, have corners between the fence posts and the fencing where vegetation can grow and attempts to trim around these posts often results in damage to the posts and/or to the trimmer's monofilament line. Sharp corners on square fence posts are particularly damaging to monofilament line and may even sever the line. This drastically reduces the useful life of a standard line supply for such a trimmer. In addition to the waste of monofilament, this results in a waste of time while the monofilament supply is replaced and the trimmer is rethreaded.
Furthermore, exposure to rain, snow, and extreme temperatures may cause the wooden posts to swell, shrink, crack, or warp. The physical deformities caused be environmental factors can result in the need for the fence to be replaced. These conditions thus result in extra maintenance that must be expended on a fence in order to keep the fence sturdy and functional.
Accordingly, a need remains for a fence post protecting apparatus to overcome the above noted shortcomings. The present invention satisfies such a need by providing a protective cover that is easy to install, durable, cost effective and effectively provides fence post protection from yard tools. The apparatus will also enhance the appearance of posts that have been previously damaged.


The interior of a truck cab (29) has a cabinet (28) that houses a refrigerator (20). The refrigerator is inserted into the interior of the cabinet by sliding it through a frontal opening in the cabinet. A mounting system that includes several parts (36, 38, 40, 42) locates and secures the refrigerator in place.

Some large highway trucks have what are sometimes called sleeper cabs that provide sleeping accommodation for one or more persons in a sleeping area located behind driver and passenger seats. The sleeping area may be equipped with various accessories that provide useful conveniences during long haul runs. One such accessory is a small refrigerator that includes a refrigeration system for keeping the interior of the refrigerator and its contents cold.
Because its mass is not insignificant due to the presence of refrigeration equipment, such a refrigerator must be secured to the cab in a suitable manner so that it can withstand forces acting on it while the truck is traveling over the road, including specified forces that are might be imposed on it in the event of a crash.
Because available space is typically at a premium inside the sleeper area, a refrigerator may be housed inside a cabinet. Because the cabinet will present the outward appearance of the refrigerator, the appearance of the refrigerator casing is essentially unimportant, and that allows the cost of the refrigerator to be minimized. A door cover of suitable outward appearance may still be attached over the front of the refrigerator door to provide desired coordination with the cabinet.
In order for the cabinet to be mounted in a manner that can comply with relevant specifications regarding loading, the cabinet may have to be essentially permanently mounted. Such mounting may be facilitated or perhaps even made possible only if the refrigerator is left out while the cabinet is being attached to cab structure.
After the cabinet has been mounted, it is still necessary to mount the refrigerator inside the cabinet, and in the presence of limited space, that task may prove difficult and inefficient for production vehicle build.
Even if the refrigerator were assembled into the cabinet prior to mounting the cabinet in a vehicle, manipulation of the assembly would be more difficult because of the weight that the refrigerator adds.

International Truck Intellectual Property Company, LLC


The present invention relates to a work station for a packaging machine, comprising an upper tool and a lower tool arranged below the upper tool. These tools are configured for acting on a packaging web. A lifting unit is able to move the upper tool and/or the lower tool such that, at a specific position, the two tools abut on one another or are only spaced apart at a small distance. According to the present invention, the two tools are adapted to be coupled to one another by a releasable coupling at this position so that they can be removed from the work station in common. The invention also relates to a corresponding method for removing a lower tool from a work station, e.g. for the purpose of tool exchange.

Packaging machines for packaging articles to be packed with a packaging web material are known to a sufficient extent. For example, DE 10 2007 013 698 A1 or DE 10 2009 022 545 A1 disclose thermoform machines as a special type of packaging machines. In these thermoform packaging machines, packaging troughs are thermoformed in a bottom film/foil, filled with a product or articles to be packed, and subsequently sealed with a lidding web. After having been sealed, the packages are separated from one another. To this end, cutting units are normally provided in the longitudinal and in the transverse direction of the working direction of the packaging machine. Such thermoform packaging machines normally comprise a plurality of work stations, for example, a forming station for forming packaging troughs, a sealing station for sealing the lidding web to the bottom film as well as one or a plurality of cutting stations. Also other types of packaging machines, such as tray sealers, comprise one or a plurality of work stations, in particular for sealing packages and, if necessary, for evacuating and/or flushing the packages with gas before they are sealed.

Work station for a packaging machine and tool changing method

MULTIVAC SEPP HAGGENMUELLER GMBH & CO. KG


A method for preparing titanium-containing molecular sieves include the following steps: irradiating a mixed solution containing a silicon source, a template and a titanium source by a light source containing ultraviolet light before crystallization, and then subjecting the mixed solution to crystallization and post-treatment to obtain the titanium-containing molecular sieve. In the method for preparing titanium-containing molecular sieve of the present invention, the mixed solution containing the silicon source, the template and the titanium source is treated with the ultraviolet light, and free radicals generated by the ultraviolet light can effectively dissociate titanium oligomers and accelerate the hydrolysis of the silicon source, and thus match the hydrolysis rate of a silicon-titanium precursor, thereby preventing a titanium monomer from self-polymerization to form non-framework titanium. Therefore, a titanium-containing molecular sieve that does not contain the non-framework titanium can be quickly prepared.

In the 21st century, with the rapid development of science and technology, people's living standards and culture levels have been gradually improved, and the improvement of environmental protection requirements is also urgent. The contradiction between people's ever-increasing living standards and severe environmental conditions has been gradually formed, so environmental protection has been put on the agenda. At present, in order to adapt to the concept of green environmental protection, slogans such as "atomic economy" and zero emission of industrial pollution are proposed. At the same time, at least 90% of the processes in the contemporary chemical industry are completed with the participation of catalysts. Therefore, green and environmentally-friendly catalysts have gradually occupied the market. Among them, a titanium-containing molecular sieve is gradually gaining favor from the market due to its characteristics of non-pollution to the environment and excellent oxidation performance.
The titanium-containing molecular sieve was first reported and successfully synthesized by Taramass from Italy in 1983. Thereafter, the titanium-containing molecular sieve has been widely concerned. Since the titanium-containing molecular sieve has excellent oxidation activity after titanium atoms are inserted into the skeleton of pure silicon of the molecular sieve, the titanium-containing molecular sieve is also widely used in various oxidation reactions such as ammoxidation of ketones, hydroxylation of aromatic hydrocarbons, epoxidation of olefins, oxidative desulfurization and partial oxidation of alkanes. In the use of the titanium-containing molecular sieve, hydrogen peroxide is usually used as an oxidizing agent. This oxidizing agent is green and environmentally friendly, non-toxic and harmless, and conforms to the current trend of environmental protection. Furthermore, the reaction temperature is usually at room temperature, and the reaction conditions are mild and not harsh, which is in line with the cutting-edge concept of zero emission of industrial pollution.
Up to now, a large number of titanium-containing molecular sieves have been synthesized, including TS-1, TS-2, Ti-Beta, Ti-MCM-41, Ti-MCM-48, Ti-TUD, etc. Among them, a very critical step in the synthesis process of the titanium-containing molecular sieves is to avoid the generation of non-framework titanium, because the non-framework titanium will cause a series of side reactions, and thus result in a decrease in selectivity, activity and the like of the reaction, which greatly affects the reaction effect. Therefore, in order to avoid the generation of the non-framework titanium, a series of measures emerge at the right moment, including adding a surfactant, slowing down the dropwise adding rate of the titanium source, using a solvent for dissolution, and inhibiting the hydrolysis of the titanium source, etc. However, for these methods, on one hand, the use of surfactants and solvents will greatly pollute the environment; and on the other hand, the too slow dropwise adding rate of the titanium source will affect the efficiency of the entire manufacturing process, greatly increasing the time cost in the industrial synthesis. Therefore, an entirely new synthesis method is urgently needed to overcome the problem of environmental pollution and improve the synthesis efficiency, but at the same time still ensure that the molecular sieve does not contain the non-framework titanium.

Method for preparing titanium silicon molecular sieve

CHINA UNIVERSITY OF PETROLEUM (EAST CHINA)


An orthopaedic pillow cover for supporting a human neck and head includes a tubular fabric pillow band open in both of its respective ends for encircling a conventional pillow. Two neck support rolls are pivotally connected opposite one another to an inside surface of the pillow band and are positioned perpendicular to the respective ends of the pillow band.

The present invention relates in general to pillows, and more particularly, an orthopaedic pillow cover with independent adjustments to provide various levels of neck and head support.
Most people spend a significant part of their life sleeping. To make sleep more comfortable, most people use a pillow to support their neck and head. However, many people suffer neck and back pain and headaches which are caused by static, inappropriate, insufficient or improper support of the head or neck while laying down or sleeping. Muscle fatigue then sets in induced by the static, inappropriate, improper or insufficient support. To reduce the muscle strain and fatigue when sleeping or lying down, adjustable support should be provided along the contour of the neck or body curvature. The present invention is directed towards providing better support for the head and neck so as to reduce neck and back strain, fatigue and pain.
Orthopaedic pillows or supports are well known in the art. U.S. Pat. No. 5,367,731 (O""Sullivan) discloses a pillow cover having an open end which could be used to receive a conventional pillow, and a plurality of internal compartments for receiving various pillow inserts. While this patent teaches the use of various insert devices to adjust the level of support, the inserts are not integral parts of the pillow and are required to be inserted and removed as necessary to provide adjustable levels of support.
U.S. Pat. No. 4,768,248 (O""Sullivan) discloses a health pillow construction which contains two chambers with one chamber containing soft filler material and a second chamber containing a slidably moveable neck support that can be shifted from one position to another within the chamber. However, U.S. Pat. No. 4,768,248 does not teach the use of multiple neck supports, nor does it provide a support which is specifically contoured to fit the shape of the human neck. Furthermore, U.S. Pat. No. 4,768,248 does not disclose a method of providing adjustable levels of support for the neck and head.
U.S. Pat. No. 4,754,513 (Rinz) discloses a pillow case housing an insert of semi-cylindrical cross-section defining a curved surface. The single insert runs along the length of the pillow case and is made of a soft, resilient, elastomeric material.
Additional references are known which pertain to head and neck support pillows, as follows:
U.S. Pat. No. 4,916,765;
U.S. Pat. No. 5,016,303;
U.S. Pat. No. 3,849,810;
U.S. Pat. No. 3,667,074;
U.S. Pat. No. 4,756,035;
U.S. Pat. No. 3,521,310;
U.S. Pat. No. 3,411,164;
U.S. Pat. No. 655,087;
U.S. Pat. No. 4,924,540.
While the known prior art support pillows disclose the provision of various types of pillow cases or support rolls within a pillow device, none of the known prior art teaches the combinations of a pillow case containing multiple support rolls, which are each shaped specifically to support the neck independent of the head and which are integral to the pillow case. In addition, none of the known prior art discloses an adjustable support pillow device with multiple adjustable and integral support bolsters which can be varied to provide a different level of support to the head and neck based upon whether a person is lying on their back, side or front or provide for the needs of different individuals with differently sized and shaped anatomies.
According to the present invention, an orthopaedic pillow cover is provided which provides support to relieve neck and back pain and discomfort associated with conventional pillows. The orthopaedic pillow cover of the present invention works in conjunction with a conventional pillow, with the conventional pillow inserted inside the orthopaedic pillow cover to provide a cost effective, infinitely adjustable orthopaedic support for the individual""s neck and head. The orthopaedic pillow cover of the present invention contains at least two neck support rolls which are designed to conform to the curvature of the neck. Additionally, the neck support rolls are of a different size so as to accommodate the specific circumstances depending upon whether the person is sleeping on their front, side or back. Furthermore, the neck support rolls are of a material which is more firm than a conventional pillow to provide a higher degree of support for the neck and head. Additionally, the orthopaedic pillow cover of the present invention, with its different size neck supports, allows the orthopaedic pillow cover to be adjusted to accommodate the needs of different individuals who each require different levels of neck and head support. The inventive orthopaedic pillow cover can be adjusted to provide support for the entire neck and head region regardless of the size of the individual. Furthermore, the neck rolls of the orthopaedic pillow cover of the present invention can pivot to provide multiple degrees and levels of adjustment of support. In addition, the orthopaedic pillow cover of the present invention can be infinitely adjusted by rotation on its axis around a conventional pillow to bring varying degrees of firm support as desired to any position between the shoulder, neck and head. Moreover, the orthopaedic pillow cover of the present invention can be turned inside out so that the neck supports are positioned on the outside of the cover for additional adjustment positions. The inventive pillow cover has the advantage of being easily transported and can be used to turn any conventional pillow such as is used at home or found in any hotel room into a sophisticated, infinitely adjustable head and neck support without the need to transport a bulky special pillow from place to place. Finally, the orthopaedic pillow cover of the present invention can be placed inside a conventional pillow case to match the existing bed linen.
In general, an orthopaedic pillow cover is provided for supporting a human neck and head comprising: a tubular fabric pillow band open on both of respective ends for encircling a conventional pillow; and two neck support rolls oppositely connected about their respective pivot points to an inside surface of the pillow band and positioned perpendicular to the respective ends of the pillow band.


An isolation system for an oil and gas well is described wherein the system comprises an isolation section and a first isolation device integral with the section and a second isolation device sealingly engaged to the section. The first isolation device may be a pressure-actuated valve and the second isolation device may be a plug.

1. Field of the Invention
This disclosure relates generally to an isolation system for oil and gas wells and, more particularly, to a formation isolation system comprising a first integral and actuatable isolation device and a second isolation device.
2. Description of the Related Art
A typical hydrocarbon well may utilize one or more gravel packs and screen assemblies to enhance production from, for example, unconsolidated formations. It is desirable in such wells to isolate each producing formation using a variety of flow control devices, such as packers and valves. It is also desirable to provide bi-directional isolation and interventionless actuation, such as interventionless opening, of one or more of the isolation devices. It is not unheard of, however, for the interventionless or mechanical actuation system to become fouled and unusable. In such circumstances, the isolation device, such as, for example, a ball valve, may need to be be drilled or milled out of the completion string. Such fouling and recovery efforts are obviously undesirable.
This application for patent discloses an improved isolation system and method of use comprising a first isolation device that is integral with the system, such as a pressure actuated valve or mechanically actuated valve, and a second isolation device, such as a plug, so that when both devices are closed, the formation is isolation and when the first device is open and the second device is closed, the formation is not isolated.

Isolation system comprising a plug and a circulation valve and method of use


A cyclone for a cyclone mist eliminator. The cyclone has an inner wall enclosing an inner chamber having an inlet end and an opposed outlet end, an outer wall surrounding and spaced outwardly from the inner wall to create an outer chamber in a spacing between the inner wall and the outer wall, openings foamed in the inner wall to permit fluid in the inner chamber to pass through the openings and into the outer chamber, a swirler positioned at the inlet end of the inner chamber, and a fiber pad positioned in the outer chamber.

The present invention relates generally to devices for the separation of liquid droplets entrained with gas in a flowing vapor stream and, more particularly, to cyclones, cyclone mist eliminators and methods of using same to separate liquid droplets from the gas in the flowing vapor stream.
Cyclone mist eliminators are used to provide high capacity removal of liquid droplets and mist from a vapor stream to improve process efficiencies, reduce product loss, and prevent equipment damage in various processes. In one conventional type of a cyclone mist eliminator, a number of cyclones are positioned side-by-side within a housing and a number of such housings containing the cyclones are mounted to an underside of a tray deck positioned within a vessel. Each cyclone has an open-ended inner chamber formed by a cylindrical or frusta-conical wall. The vapor stream passes through openings in the floor of the housing and enters the inlet end of the inner chamber. A swirler induces a rotating swirling motion to the vapor stream to cause the liquid droplets and mist to impinge upon and coalesce on the inner surface of the wall. The gas from which the liquid has been removed flows axially out of the outlet end of the inner chamber and passes through the tray deck for subsequent removal from the vessel.
The liquid film that has coalesced on the inner surface of the wall of the cyclones is carried by a small amount of gas through narrow openings in the wall into the open volume of the housing. The liquid then disengages from the gas and collects on the floor of the housing where it enters a drain pipe for delivery to the bottom of the vessel for subsequent removal. The gas that has carried the liquid film into the open volume of the housing is then recycled into the inner chambers of the cyclones.
Improvements in the design of cyclone mist eliminators are desired to provide high separation efficiency across a range of operating pressures while reducing the complexity in the manufacture and assembly of the cyclone mist eliminators.

Cyclone, cyclone mist eliminator and method of use


Various embodiments associated with estimating a parameter offset for editions of a signal of interest through use of a secondary signal are described. A plurality of distributed asynchronous sensors can capture editions of a signal of interest as well as editions of a secondary signal. The secondary signal can be much stronger than the signal of interest. Since individual sensors capture the signal of interest editions and the secondary editions, offset calculated for one can be used for the other. With the secondary signal being stronger than the signal of interest, the offset of the editions of the signal of interest can be estimated. Once the offset is estimated for the secondary editions, the offset can be used for the signal of interest editions. After the offset is used to align the signal of interest editions, the signal of interest editions can be combined and further processing can occur.

In a combat environment, different forces can broadcast different signals. In a singular environment, enemy combatants can each broadcast different signals. It may be possible for one combatant to intercept the signal of another combatant. The intercepting combatant may not know the modulation scheme of an intercepted signal. Without the modulation scheme, it may be difficult to put the intercepted signal to use.

Parameter offset estimation through use of a secondary signal collected from multiple sensors

The United States of America, as represented by the Secretary of the Army


A reference ring oscillator circuit (RROC) is used to determine timing characteristics of a test interconnect structure in an integrated circuit. The RROC includes an odd number of inverters coupled together in a ring manner and has defined test segments at which a test interconnect can be loaded. Reference timing characteristics of the unloaded RROC are determined according to a calibration method including the steps of: (a) directly measuring signal propagation delay through each segment of the RROC; (b) modeling each test segment using an RC tree type reference circuit model having reference elements; (c) simulating the reference circuit model to provide a functional relationship between two reference capacitors; (d) defining upper and lower bounds for propagation delay through the test segment in terms of the reference elements; (e) determining values for the reference capacitor elements; and (f) measuring a reference frequency of oscillation of the unloaded RROC. After calibration, a test frequency of oscillation of the RROC is measured while a test interconnect structure is loaded onto a test segment. The period of the reference frequency is subtracted from the period of the test frequency. A time difference between the two periods is attributed to increased signal propagation delay through the RROC as a result of loading the test interconnect structure onto the test segment. Based on the measured time difference and determined reference timing characteristics of the test segment, timing characteristics of the test interconnect structure are determined.

1. Field of the Invention
The present invention pertains to a method for measuring time characteristics of an interconnect structure within an integrated circuit. More particularly, the present invention relates to a method for characterizing the distributed resistance and capacitance associated with interconnect structures in integrated circuits.
2. Background Technology
Distributed resistance and capacitance of interconnect structures in an integrated circuit (IC) cause signal propagation delays through the IC. Because signal propagation delays slow down the functioning of an IC, it is important for IC designers to determine the timing characteristics associated with interconnect structures in ICs. Timing characteristics of an interconnect structure, for purposes of the present application, include distributed capacitance and resistance of the interconnect structure and signal propagation delay through the interconnect structure. A reliable method for estimating the timing characteristics of interconnect structures in ICs is important for IC designs because the delay introduced by interconnect structures may be comparable to or longer than delays introduced by active devices. For example, a delay introduced by an interconnect structures as short as 1 mm, with 0.4 .mu.m feature size, in an IC can be comparable to or longer than delays introduced by active devices in the IC. Propagation delays through interconnect structures increase as wiring lengths increase or feature size decreases.
Programmable ICs are programmed to perform desired logic functions. A field programmable gate array (FPGA) is an example of a programmable IC. An FPGA is typically comprised of three major configurable elements: configurable logic blocks (CLBs), input/output blocks (IOBs), and an interconnect network. The CLBs provide the functional elements for constructing the desired logic. The IOBs provide the interface between the package pins and internal signal lines. The interconnect network provides routing paths, programmable intersection points (PIPs), and switch matrices to transfer the input and output signals of the CLBs and IOBs onto the appropriate networks. The CLBs, IOBs, and interconnect network are configured by programming a plurality of internal memory cells.
Prior Art FIG. 1A shows a block diagram of an FPGA 101 including a 4.times.4 CLB array 102. An FPGA design can have a variable array size (10.times.10, 12.times.12, etc.) CLB matrix. The present invention can be applied to suit any CLB array size. A CLB includes multiple elements, such as function generators, flip-flops, buffers, drivers, multiplexers, registers, etc. Refer to U.S. Pat. No. Re.34,363, issued to Freeman on Aug. 31, 1993, and assigned to the assignee of the present invention. Surrounding CLB array 102 are IOBs 103-106 and decoders 107-110. The CLBs, IOBs, and decoders are programmably interconnected by the use of three main types of interconnect lines. Interconnects in FPGAs are typically composed of metal lines. Interconnects are distinguished by the relative length of their lines: single length lines, double length lines, and long lines. The single-length lines are comprised of a grid of horizontal and vertical metal lines that intersect at switch matrices (not shown) between each CLB. The switch matrices are used to establish connections between the single-length lines. The double-length lines (also not shown) consist of a grid of metal segments that are twice as long as the single-length lines. Hence, a double-length line runs past two CLBs before entering a switch matrix. Long lines 121-126 form a grid of metal interconnect segments that substantially run the length or width of FPGA 101. These horizontal and vertical long lines, which bypass the switch matrices, are intended primarily for signals that must travel a long distance, or must have minimum skew among multiple destinations. It is an object of the present invention to provide a method for determining the timing characteristics associated with single length lines, double length lines, and long lines in FPGAs.
Prior Art FIG. 1B shows an exemplary programmable interconnect point (PIP) 181 in an FPGA. The PIP 181 includes a pass transistor 184 having its gate coupled to a memory cell 185. Memory cell 185 can be programmed with a bit that either turns ON or turns OFF pass transistor 184. If turned ON, pass transistor 184 electrically connects lines 182 and 183. If turned OFF, pass transistor 184 does not connect lines 182 and 183.
A dynamic voltage contrast scanning electron microscope (SEM) provides accurate direct measurements of time periods as short in duration as a few hundred picoseconds. Time delays for signals propagating through IC interconnect structures are generally less than a few hundred picoseconds. Therefore, an SEM can provide only limited accuracy in measuring propagation delays through shorter IC interconnect structures. Moreover, an SEM can only be used to measure signal propagation delay through a signal path if it is possible to apply a pair of specialized test probes across the signal path. Using an SEM for this task is costly and time intensive and is therefore not a practical solution for characterizing an IC having thousands of different interconnect segments. The SEM must be able to reach the various signals under test. In a typical multilayer metal IC, only the top layer of metal is accessible. Therefore, test points from the lower layer metals must be introduced and brought to the top layer.
However, propagation delays through inaccessible signal paths may be indirectly measured by an addition/subtraction method. In this method, propagation delays through a multiplicity of accessible overlapping signal paths are directly measured. Then the measured delay times are added and subtracted appropriately to determine a value for propagation delay through the overlapped portions of the signal paths. Although reliable, this method is impractical because of the limited number of signal paths which overlap each other and the complexity of the analysis of those signal paths.
By configuring an FPGA, or other programmable IC appropriately, it is possible to create signal paths which begin and end at known points and which have common signal path segments. Signal propagation delays for each of these paths, beginning and ending at known points, can be measured using an SEM. The measured propagation delays are then added and subtracted to obtain propagation delays for common segments of the signal paths. However, the method of measuring, adding, and subtracting signal propagation delays is very time consuming and economically impractical.
Accordingly, it would be desired to arrive at a method for measuring timing characteristics that could be applied to interconnect segments without requiring an SEM and accessible test points for each interconnect segment. The present invention provides the above advantageous functionality.

Method for characterizing interconnect timing characteristics


A bottom hole assembly for use in a subterranean well can include a whipstock, a mill releasably secured to the whipstock, an antenna, and a release mechanism configured to release the mill from the whipstock in response to a predetermined radio frequency signal received by the antenna. A method can include positioning a bottom hole assembly in a well, the bottom hole assembly including a mill and a whipstock releasably secured to the mill, and then releasing the mill from the whipstock by displacing a radio frequency identification tag into the bottom hole assembly. A well system can include a bottom hole assembly comprising an anchor, a whipstock and a mill, and a radio frequency identification tag displaceable with fluid flow into the bottom hole assembly.

This disclosure relates generally to equipment utilized and operations performed in conjunction with a subterranean well and, in an example described below, more particularly provides for RFID actuated release of a mill from a whipstock.
A whipstock is sometimes used in well drilling operations to form a lateral or branch wellbore from a main or parent wellbore. If the main or parent wellbore is lined with casing, a window may be formed through the casing by use of the whipstock with a mill specifically designed for this purpose.
Typically, the whipstock is releasably attached to the mill during conveyance of this equipment into the well. When the whipstock is at a desired position, an anchor is set and the mill is released from the whipstock.
A shearable bolt is typically used to releasably secure the whipstock to the mill. However, the bolt may be inadvertently or prematurely sheared, for example, if an obstruction is encountered during the conveyance of the equipment into the well, substantial changes in wellbore direction are encountered, etc.
Therefore, it will be readily appreciated that improvements are continually needed in the art of designing, constructing and operating mechanisms for releasing mills from whipstocks in wells. Such improvements may be useful in a variety of different drilling operations, such as, forming casing exit windows, drilling lateral or branch wellbores, sidetracking, etc.

RFID actuated release of mill from whipstock


A dual function heating and toasting apparatus is provided for radiantly heating or surface toasting bread-type food products. The apparatus includes a housing defining a heating/toasting chamber. A generally vertically oriented, center fixed heating platen is disposed in the chamber. A pair of generally vertically oriented, movable heating platens are disposed on opposite sides of the center fixed platen. A gate is movably mounted on the housing near the bottoms of the platens for movement between a closed position to hold a product between the platens and an open position allowing a finished product to exit the chamber. A product such as a bagel can be placed into the chamber onto the gate between one of the movable platens and the fixed platen and spaced therefrom to heat the bagel by radiant heat. Alternatively, a product such as a bun can be placed in the chamber onto the gate and the movable platen moved to bias the bun against the fixed platen to surface toast the bun. The gate is movable to the open position to allow the heated bagel or the toasted bun to exit the chamber.

Toasting apparatus are used in a wide variety of applications ranging from simple two-slice toasters used in the home to more elaborate toasting apparatus used in restaurants, such as fast food restaurants, for preparing various bread-type food products. Some toasters have flat heated platens for engaging and "caramelizing" the flat surface of certain products such as sandwich buns. In other words, the inner flat surfaces of the two bun halves are pressed against the flat heated platens to give the desired toasted finish on the surfaces of the bun or other such bread product. Other toasters use radiant heat and are used for toasting such bread products as bagels, muffins or the like. In these types of toasters, the bread product is not actually touched or pressed against a flat heated surface or platen.
In many restaurant establishments, such as fast food restaurants, radiant toasters are used during "breakfast time" for toasting such products as bagels, muffins, croissants or the like with radiant heat. After the breakfast time, the radiant toaster is moved out of the way and a second "lunch or dinner time" toaster is brought out for toasting the flat surfaces of other bread products such as sandwich buns, slices of bread or the like. Problems with such systems involve the fact that two separate toasters are required to perform two separate toasting functions or processes. This requires multiple expenditures, multiple shelf space, multiple cleaning jobs and other related problems. The present invention is directed to solving these problems by providing a new and improved dual function toaster, along with a novel platen and gate system, as well as a unique method of surface toasting buns or other such bread-type food products.

Apparatus and method of toasting bread-type food products


An RF antenna structure (e.g., a planar array) includes at least one radiation cell (and typically many, e.g., 16 or 32 or 64, etc.) having a conductive enclosure and an upper probe and a lower probe located at different heights within the enclosure. The enclosure between the upper probe and a bottom of the cell has at least two different cross-sectional areas. The upper and lower probes are preferably oriented at substantially 90° relative to each other. An upper portion of the enclosure beneath the upper probe may have a larger dimension than a lower portion such that the upper portion allows propagation of waves generated by the upper probe in a predetermined frequency band while the lower portion (e.g., above the lower probe) does not substantially allow propagation of waves generated by the upper probe, in the predetermined frequency band.

1. Technical Field
The present invention relates to antennas and particularly to cavity backed antennas.
2. Related Art
One type of antenna suitable, for example, for satellite communication is planar array antennas. Planar array antennas are generally formed of an array of many (e.g., hundreds) cells, defined at least in part on printed circuit boards.
In a simple antenna, each cell includes a single electric probe, which either receives electromagnetic signals from a remote antenna (e.g., a satellite carried antenna) or transmits electromagnetic signals toward a remote antenna. A bottom reflective layer of the planar antenna reflects electromagnetic signals propagating downward, such that they reflect upwards toward the remote antenna.
It has been suggested to use a dual beam and dual polarization antenna, in which each cell includes two orthogonal electric probes, in separate layers, such that the probes share a common cell aperture. In order to prevent interference between the probes in a single cell, intra-cell isolation is required.
U.S. Pat. No. 5,872,545 to Rammos, the disclosure of which is incorporated herein by reference, describes such a dual beam and dual polarization antenna. Intra-cell isolation between the beams, however, is limited in the Rammos antenna and therefore the antenna can not be used in applications which are sensitive to signal polarization.
The problem of isolation between the beams of a single cell is compounded in relatively large planar arrays, which are used for transmissions over a relatively large bandwidth (e.g., for communications). In such arrays, also inter-cell isolation is required between the cells. In order to prevent interference between the cells, for example, each cell may be surrounded by a metallic frame. While such metallic frames improve the radiation efficiency of each cell, they interfere with the intra-cell isolation and make it even harder to use dual-polarization cells.
U.S. patent publication 2003/0122724 to Shelley et al., the disclosure of which is incorporated herein by reference, describes a planar array antenna with elements having two orthogonal probes. Features are described to increase isolation between the signals associated with each of the probes.

Dual polarization planar array antenna and cell elements therefor


An extreme ultraviolet light source apparatus includes a main body including a supply section to which an extreme ultraviolet radiation seed is supplied, and an emission part configured to emit extreme ultraviolet, an excitation unit provided in the main body and configured to generate a plasma by exciting the extreme ultraviolet radiation seed, an optical condensing unit provided in the main body and configured to converge extreme ultraviolet, which is radiated from the plasma, at the emission part, a trap provided between the excitation unit and the optical condensing unit, a first positioning mechanism connected to the trap and configured to adjust at least one of a position and an angle of the trap, and a measuring unit configured to measure a far field distribution image of the plasma on the basis of the extreme ultraviolet which is emitted from the emission part, thereby to operate the first positioning mechanism.

1. Field of the Invention
The present invention relates to an extreme ultraviolet light source apparatus functioning as, for example, a light source for semiconductor exposure, and a method of adjusting the extreme ultraviolet light source apparatus.
2. Description of the Related Art
In recent years, as a light source for semiconductor exposure, there has been proposed an extreme ultraviolet light source apparatus (EUV light source apparatus) which emit extreme ultraviolet (EUV) light with a wavelength of 13 to 14 nm, in particular, with a wavelength of 13.5 nm. An example of the EUV light source apparatus is a discharge produced plasma (DPP) type EUV light source apparatus (see, e.g. "Present State and Future Prospect of Research of EUV (Extreme Ultraviolet) Light Source for Lithography", Jp. Plasma Fusion Res. Vol. 79, No. 3, P219-260, March 2003).
This DPP type EUV light source apparatus comprises, for example, a container functioning as a main body, a first main discharge electrode (cathode) with an annular shape and a second main discharge electrode (anode) with an annular shape, which are disposed substantially coaxially within the container, and an EUV condensing mirror which is disposed under the first and second main discharge electrodes. In a method of emitting EUV light, a large pulsating current is caused to flow between the first and second main discharge electrodes, for example, in the state in which an EUV radiation seed is introduced in the container. Thereby, the EUV radiation seed, which is introduced in the vicinity of the first and second main discharge electrodes, is heated and excited, and a high-density high-temperature plasma is generated in the vicinity of the first and second main discharge electrodes. EUV light, which is radiated from the high-density high-temperature plasma, is reflected by the EUV condensing mirror and is emitted to an exposing device.
However, if the high-density high-temperature plasma is generated, such a problem arises that debris, for instance, metal powder, which is produced by sputtering by the high-density high-temperature plasma, or debris occurring from the radiation seed, may damage the EUV condensing mirror. In order to prevent damage to the EUV condensing mirror, a debris trap for passing only EUV light is formed between the first and second main discharge electrodes and the EUV condensing mirror. As the debris trap, for example, a structure called "foil trap" has been proposed (see, e.g. Jpn. PCT National Publication No. 2004-214656).
On the other hand, in some cases, the high-density high-temperature plasma, which is the light source of EUV light, may melt and deform the nearby first and second main discharge electrodes, and may vary the position of electric field. As a result, the position of generation of the high-density high-temperature plasma shifts and the position of the luminescent point of EUV light that is emitted from the plasma may deviate from the central position of the foil trap. Hence, such a problem occurs that the amount of light which can pass through the foil trap decreases.
Thus, in the conventional EUV light source apparatus, it is difficult to obtain EUV light of a stable and desired light amount.

Extreme ultraviolet light source apparatus and method of adjusting the same


A bipolar memory array and memory cell. The memory cell has a pair of cross coupled NPN storage transistors and a pair of PNP load transistors. The collector of each of the load transistors is connected to one of the storage transistors. A base, common to both load transistors, are connected to a drain line. The word line is connected to an emitter common to both of the load transistors. The cell is connected to a bit line pair through Schottky Barrier Diodes (SBD's) or, alternatively, through emitters of transistors which share a common base and a common collector with the cross coupled storage transistors.

This invention relates to high density, high performance, semiconductor arrays of memory, and in particular to complementary bipolar transistor memory cells.
It is well known in the art that although a bipolar transistor's emitter and collector terminals may be swapped, the emitter and collector terminals are not functionally equivalent. A transistor with its base to emitter junction forward biased and base to collector junction reversed biased exhibits a high current amplification. The same transistor with its emitter and collector swapped, i.e., its base to collector junction forward biased and its base to emitter junction reverse biased, exhibits much lower current amplification. The first biasing condition is the transistor's normal mode of operation and the second biasing condition is the transistor's inverse mode of operation. Transistors operating in their inverse mode are known as inverse mode or inversion mode transistors.
In Merged Transistor Logic (MTL) memory cell design inverse mode transistors were used in the prior art. Inverse mode transistors were used because, the cell's cross coupled transistors could be made much smaller as inverse mode transistors than as normal mode transistors. Vertical transistors have small emitters on and surrounded by a base region and the base region is on and surrounded by a much larger collector region. Because isolating transistor collectors means significantly expanding transistor area, inversion mode transistors were used for cross coupled transistors with a common emitter connection. Although these cross-coupled transistors were schematically represented as normal mode transistors, it was understood and described in the prior art that the cross coupled transistors in merged transistor memory cells were inversion mode transistors. Efficient use of space is especially important in memory cell design because chip size is directly proportional to cell size. A 10% reduction in cell size will translate to nearly a 10% reduction in chip size. A 10% reduction in chip size translates to 11% increase in the number of chips per wafer and, because wafer cost is generally independent of number of chips on the wafer, memory chip cost is reduced. However, reducing size by using inverse mode transistors meant that, because inversion mode transistors are slow, these merged transistor memory cells were slow.
A high performance alternative to the merged transistor cell was the complementary transistor switch (CTS) cell of U.S. Pat. No. 3,863,229 incorporated herein by reference. Essentially, the CTS cell was a pair of cross coupled PNPN switching devices (silicon controlled rectifier or SCR). Each SCR has a Schottky Barrier Diode (SBD) across the second PN junction (between the SCR's control gates). The SBD prevents saturation of the NPN and PNP transistors which are intrinsic to the SCR structure. That the current limiting SBD's could be eliminated was disclosed in "saturated CTS Memory Cell Using A PNP Load", IBM Technical Disclosure Bulletin Vol. 26 No. 9, Feb. 1984, pp 4720-21.
While the CTS cell improved read access performance over the merged transistor cell without sacrificing cell density, the CTS cell still suffered from a slow cell write time. Cell write time was slow for 2 reasons. First, when a SCR is turned on, both intrinsic transistors are in deep saturation. As a result, the junction capacitances are high. Second, writing the cell is done by pulling one side of the cell high, i.e., by supplying enough current to the collector of the intrinsic NPN transistor in the "ON" SCR to pull that NPN transistor far enough out of saturation to switch the "OFF" SCR on. Even after the "OFF" SCR has been switched on, the CTS cell still has not been written The "OFF" SCR must have been switched on long enough to turn the "ON" SCR off. Switching time required to switch the CTS cell is further impaired because the junction capacitance of the "ON" SCR (which is in deep saturation) is high. High junction capacitance means stored charge is high Since discharge time for any given discharge current is directly related to the amount of stored charge, increased stored charge means increased discharge (write) time. So, because writing the CTS memory cell requires the time it takes to pull one side of the cell high, thereby turning on the "OFF" SCR, and pull the other side low, thereby turning off the "ON" SCR, the CTS write time is slow.
A second problem encountered with the CTS cell which arose from an attempt to improve CTS write time was intolerance to leakage from the intrinsic PNP transistors. In order to improve write time, the current gain of the SCR's intrinsic PNP and NPN transistors was weakened. Weakening the intrinsic transistors made the cell easier to write because the ON SCR's weakened transistors were not as deeply in saturation. So, weakening the transistors produced the same effect as the SBD's in early CTS cells. However, a cell which is easier to write is often easier to upset or disturb and is, therefore, less stable. Leakage problems occurred because of leakage between the high side of cell and the substrate. As a result of weakening the SCRs, the SCR's functions became leakier. While leakage in the PN junction between the P type substrate and the base of the PNP transistor in the "ON" SCR merely reinforced the low level on the base of "ON" SCR's intrinsic PNP transistor, leakages in the PN junction between the P type substrate and the base of the PNP transistor in the "OFF" SCR had the opposite effect The leakage in the intrinsic PNP transistor base of the "OFF" transistor pulled the cell's high side down, reducing the levels stored in the cell, making the cell easier to upset or disturb, and therefore, even less stable Consequently the CTS cell was more sensitive to read disturb, soft errors and other noise.
Read disturbs occur when, in an attempt to read the data stored in the cell, the cell is upset. Soft errors are errors induced into a memory chip when a memory cell is upset by its environment, such as by being upset when PN junction in the cell is struck by an alpha particle. Memory cell designers were thus faced, with trading performance for density and stability; stability for performance and density; or, density for performance and stability.

Bipolar memory cell with isolated PNP load

International Business Machines Corporation


The channel region of the FET device has a first portion adjacent the source which has a higher bandgap energy or a higher electron affinity than a remaining portion of the channel. A quasi-electric field in the channel near the source is intensified and as a result, accelerates charge carriers in the channel and increases switching speed. An infrared controlled FET device is also disclosed in which a low bandgap channel layer has a large bandgap layer deposited on it to result in a conduction band discontinuity at the junction between the large bandgap semiconductor layer and the low bandgap channel layer and a two-dimensional electron gas (2DEG) channel in the low bandgap channel layer so that photons reaching the 2DEG eject charges and allow conduction through the channel layer.

1. Field of the Invention
The novel invention relates to novel structures for Field Effect Transistors FETs, such as Heterojunction Insulated Gate FETs (HIGFETs) and Field Effect Infra-Red (FIRE) or FET IR detectors.
2. Description of Prior Art
HIGFET
The high mobility and large electron saturation velocities of compound semiconductors makes them attractive candidates for high speed and high frequency applications. In extremely small geometry devices the electrons are expected to experience collisionless ballistic transport through the active region of the device. This phenomenon is more easily observed in vertical heterojunction bipolar transistors (HBT) where the electrons enter the active region with considerable initial velocities. In HIGFETs, application of a suitable gate voltage lowers the semiconductor potential in the channel region under the gate region and causes electrons to be injected from the highly doped source into the channel. Transport occurs at the high mobility heterojunction interface and since the channel is completely undoped, scattering by ionized dopants is absent.
State-of-the-art Heterojunction FETs use a buried channel approach using epitaxial insulators, such as InAlAs or conventional dielectrics such as silicon nitride with a larger bandgap than the channel material, e.g. InGaAs. However, the forward gate-source breakdown voltage of epitaxially grown insulators is small, typically 1-1.25 volts, since the epitaxial insulators currently used have a much lower bandgap and resistivity compared to conventional dielectrics. Lattice matched or strained epitaxial growth of a high resistivity large bandgap material is a technological challenge and has not been adequately realized yet. There is also evidence that strain reduces the bandgap thereby further decreasing the confinement barrier. The lower barrier height will also limit the input gate voltage swing on enhancement type devices and restrict their high temperature operation. For these reasons, until a suitable high resistivity, large bandgap epitaxial insulator is developed there will also be interest in the use of conventional dielectrics for buried channel HIGFETs. Recently, Martin et al, reported a non-self-aligned buried channel HIGFET using SiO.sub.2 as the gate insulator in "Undoped InP/InGaAs heterostructure insulated gate FET's grown by OMVPE with PECVD deposited SiO.sub.2 as gate insulator", E. A. Martin, O. A. Aina, A. A. Iliadis, M. R. Mattingly and L. H. Stecker, IEEE Electron Device Lett. V9, pp. 500-503, 1988. These devices showed large transconductance due to carrier transport at the high mobility, buried heterojunction interface and a large allowable input voltage swing. However, a 20% drain current drive (DCD) over 10.sup.4 seconds at 300K and considerable hysterisis in the C-V characteristics indicate a significant amount of traps at the insulator/InP interface. Lowering the trap density at the top insulator/semiconductor interface will lower DCD and result in better modulation of the channel poteneial and increase the small signal response. In recent years interface passivation or interface control engineering is used to reduce the trap concentrations at the insulator/semiconductor interface. For example, Sulfur (S) passivation of the InP surface lowers the surface state density considerably by preventing the formation of Phosphorus (P) vacancies. This passivation process however is quite non-uniform and epitaxial passivation techniques can be used to improve uniformity.
In heterojunction FETs, numerical simulations indicate that the low electric field near the source region cause the electrons to enter the channel region with a low initial velocity and gradually accelerate towards the drain attaining the maximum drift velocity near the drain end of the channel. Device speed determined by the overall electron transit time of the channel region is therefore limited by the relatively slow electron drift velocity near the source region. This low field region limits performance in high frequency devices. Also, no effort has been made to date to improve the injection of carriers from the source region into the channel.
One of the objectives of the invention is to minimize these limitations by creating a built-in quasi field between the source and channel regions to speed up the electrons. An earlier approach to reduce transit time, uses a split gate to speed up the transistor (Ref: "Split gate field-effect transistor", M. Shur, Appl. Phys. Lett. V54, pp. 162-164, 1989). Here different voltages applied to two closely spaced gates changes the field distribution in the channel region. We present a new approach for a single gate FET, with a graded portion of the channel region near the source resulting in a large quasi-field near the source/channel junction. The field is used to launch the electrons at near saturation velocities into the channel region which would cause ballistic or quasi-ballistic transport depending on the device geometry. The field will also improve carrier injection from the source region.
Another objective of the invention is to use a thin epitaxial GaP passivation layer to reduce the interface state density in HIGFETs using conventional dielectrics and thereby increase the transconductance and frequency response of these devices.
FET Infra Red Detector
Conventional IR detectors use platinum silicide/p--Si Schottky barriers and narrow bandgap binary (e.g. InSb) or alloy semiconductors, (e.g. HgCdTe). Dark current is a reason for concern in both cases. The silicide/Si barrier height of 0.26 eV restricts the detector use to the 3-5 mm range while the breakdown field of narrow gap semiconductors is quite low. Materials technology and uniformity are rather difficult when narrow gap semiconductors are used. In addition these devices have to be cooled in order to minimize thermal excitation noise. The IR detector currently envisioned uses a large bandgap III-V semiconductor in contact with a smaller gap semiconductor. The latter layer has a larger electron affinity than the former and results in a conduction band discontinuity (.DELTA.E.sub.c) at the heterojunction interface and confined quantum states resulting in a two dimensional electron gas in the smaller gap material. Device operation is similar to the silicide Schottky device where the electron gas acts as the metal and .DELTA.E.sub.c represents the Schottky barrier. The photons interacts with the electron gas to produce hot electrons which are emitted across the .DELTA.E.sub.c barrier into the larger gap material. Carrier emission is aided by the presence of the field perpendicular to the surface. By choosing different materials or with different alloy compositions we can alter .DELTA.E.sub.c and thereby the operating wavelength. The device will be controlled by a gate electrode that depletes the active area between the samples minimizing thermal excitation noise. Consequently, the device is expected to be operated without cooling or at temperatures higher than conventional IR detectors. Moreover since large bandgap semiconductors are used, breakdown voltages are high.
The III-V compound semiconductor technology that is used to fabricate these devices is quite mature and the fabrication complexity is moderate. However, to fabricate the graded source HIGFET devices we will resort to selective area epitaxy which is a field currently under intense investigation. The graded source FET and the infra-red detector closely resemble the FET structures that are already proven and used in optoelectronic integrated circuits (OEICs) and microwave integrated circuits. Using interface engineering strategies, the frequency and small signal response of these devices can be increased. One such technique that uses a thin epitaxial GaP layer is proposed along with the device structrues. These devices can be used for smart pixel imaging applications.
Heterojunction FET structures are known in the art as illustrated in, for example, U.S. Pat. Nos. 4,558,337, Saunier et al, Dec. 10, 1985, 4,600,932, Norris, Jul. 15, 1986 and 4,866,490, Itoh, Sep. 12, 1989.
The '337 patent teaches group III-V compound high electron mobility FETs. In FIG. 1 of the patent, the structure illustrated includes two heterojunctions; one inverted (between layers 17 and 19) and one normal (between layers 19 and 21). The inventive structure of FIG. 2 includes two normal heterojunctions.
In the '932 patent, an enhanced mobility buried channel transistor structure is described. Referring to FIG. 1, the layer 11 is a semi-insulating GaAs layer. On top of the layer 11 is an undoped layer 12 and on top of the layer 12 is a doped layer 13. As seen in FIG. 2B, the doping of layer 13 is tapered. An undoped layer 14 covers layer 13. This removes the 2DEG layer from the top surface of the structure to minimize long range coulomb interaction with ionized impurities and interface scattering.
A MESFET structure is taught in the '490 patent. As seen in FIG. 4, the inventive structure includes a GaAs semi-insulating layer 1, a high purity AlAs layer 42 and a high purity Al.sub.x Ga.sub.l-x As layer 49. The electrode affinity of the layer 49 is graded, as shown in FIG. 5, such that, at the junction of layers 42 and 49, x=1, and at the top of layer 49, x=0.


Disclosed in the present application is an incompletely compensated wireless power transfer system. On the basis of an SS compensated wireless power transfer system topology, a primary side capacitor C1 and a secondary side capacitor C2 take specific values, and in combination with a phase shift frequency modulation control method, a coupling range of a system output rated power is improved. According to the present application, by finding an appropriate combination of the primary side capacitor C1 and the secondary side capacitor C2, the system can output a required rated power in a larger coupling range under the condition of incomplete compensation.

FIG. 1 is a simplified circuit model of a SS compensation (series-series, that is, the primary and secondary sides are series-compensated) wireless power transfer system. On the primary and secondary sides, the coil forms LC resonance with a capacitor in series connection, which is called a harmonic oscillator. The steady-state operation of this system can be described by the equations (1) (2).(R1+jX1)I1+jωM12I2=V1  (1)jωM12I1+(R2+RL+jX2)I2=0  (2)where Ri, i=1 or 2, is the parasitic resistance in the circuit, generally including the resistance of a coil and the equivalent series resistance of the capacitor; Xi=ωLi−1/(ωCi), i=1 or 2, is the reactance of the harmonic oscillator i; I1 and I2 are the current phasors of the primary and secondary side loops respectively; V1 is the phasor of an input voltage; M12 is the mutual inductance of the two coils; RL is equivalent load resistance; ω=2πf is angular frequency (f is the frequency of the power supply).
According to the theory of wireless power transmission, Xi=0 (that is, full compensation) can obtain the highest power transmission efficiency and the smallest input apparent power (that is, the input voltage is in phase with the input current).
Under the premise of complete compensation, the reflected impedance produced by the secondary side in the primary side is:
                     Z      r          =                  R       r            =                              ω         2                                 M         12         2                                       R         2                +                 R         L                                             (     3     )
In the case of a given input voltage and equivalent load resistance, ignoring the effect of parasitic resistance, the output power of the system is:
                     P      out          =                          V        1        2                      Z        r                   =                              V         1         2                                 R         L                                       ω         2                                 M         12         2                                             (     4     )
It can be seen that the output power of the system is inversely proportional to the square of the mutual inductance.
Therefore, under the condition of complete compensation and constant operating frequency, the system can only achieve the required rated power at a certain mutual inductance value.
To illustrate with specific examples, the used coil parameters are listed in Table 1. The direct current input voltage of the system is 400V, the rated output power is 3.3 kW, and the direct current output voltage is 400V. FIG. 2 is a finite element simulation model. FIG. 3 is the curve of the output power of the system changing with the air gap distance. It can be seen that when the air gap distance is 18 cm, the system can output 3.3 kW. As the distance decreases, the output power will not reach the required power rating; when the distance increases, the output power will exceed the rated value. When the distance is greater than 18 cm, through the phase shift control of the inverter, the input voltage acting on the primary side harmonic oscillator can be reduced, but the input current at the rated output power will be greater than the value at 18 cm. For example, at 18 cm, if the input direct current voltage is 400V, after full-bridge rectification, a high-frequency square wave is obtained, and the effective value of the fundamental wave is about 360V. At this time, the input current is about 9.2 A and the output power is 3.3 kW; while at 20 cm, through the phase shift control, the effective value of the fundamental wave is reduced to 267 V, the input current is 12.4 A, and the output power is 3.3 kW, but the input current is increased by 35% compared with 18 cm.
TABLE 1Coil parametersA pluralityDiameter of each wireNumber of32of wires of0.1 mm; 500 wireswindingwindingturnsWinding size350 mm × 350 mm ×Turn pitch 0of the coil3.2 mmDistance1.5 mmDistance15 mmbetween thebetweenwinding andmagneticthe magneticcore andcorealuminumplateAluminum555 mm × 555 mm ×Core370 mm × 370 mm ×plate size4 mmthickness3.5 mm
It can be seen that the coupling range of the output rated power of the traditional fully compensated SS wireless power transfer system is very limited. And although the available coupling range can be increased through phase shift control, the current caps of the coils, compensation capacitors, and inverters must also be increased. Obviously, the fully compensated SS wireless power transfer system has great limitations in practical applications.

Incompletely compensated wireless power transfer system


A recognition system for use in a vehicle or the like includes a handwriting recognizer and a voice recognizer for receiving handwriting and voice signals and a control unit to communicate a command signal associated with one, the other or a combination of both of the voice and handwritten inputs to at least one appliance. Such appliances may include, but are not limited to, car alarms, electronic windows, personal computers, navigation systems, and audio and telecommunications equipment.

Voice recognition systems have been utilized in a variety of applications to command electronic devices. Recent attempts have been made to employ such voice recognition systems to allow drivers to control automobile appliances, such as vehicle-based cellular telephones or electrical windows. Such applications make it possible for drivers to keep their eyes on the road instead of on the appliances while driving, thereby enabling drivers to drive more safely. However, such systems are adversely affected by the ambient noise present in environments such as the interior of a vehicle, particularly when the windows are open while driving at high speeds. Thus, the need exists for vehicle appliance control that allows a driver to keep his eyes on the road while not being affected by ambient vehicle noise.

This patent is subject to a terminal disclaimer.

Handwritten and voice control of vehicle components