A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with first the insulating film serving as a dielectric. The effective aperture ratio can be increased by forming the auxiliary capacitor in a selected region where the influences of alignment disorder of liquid crystal molecules, i.e., disclination, are large.

1. Field of the Invention
The present invention relates to the circuit configuration and layout of a pixel area of an active matrix display device in which thin-film transistors are used and source lines formed above gate lines. In particular, the invention relates to the structure of an auxiliary capacitor.
2. Description of the Related Art
In recent years, techniques of forming thin-film transistors (TFTs) on an inexpensive glass substrate have been made rapid progress. This is because of increased demand for the active matrix liquid crystal display device.
In the active matrix liquid crystal display device, thin-film transistors are provided for respective ones of hundreds of thousands to millions of pixels that are arranged in matrix form and the charge entrance and exit to each pixel is controlled by the switching function of the thin-film transistor.
A liquid crystal is interposed between each pixel electrode and an opposed electrode, to form a kind of capacitor. Therefore, image display is realized by controlling the quantity of light passing through the liquid crystal panel by varying the electro-optical characteristic of the liquid crystal by controlling the entrance and exit of change to and from this capacitor with the thin-film transistor.
The capacitor having the above structure has a problem that since the voltage held by the capacitor gradually decreases due to current leakage, it changes the electro-optical characteristic of the liquid crystal and deteriorates the contrast of image display.
A common measure to solve the above problem is a configuration in which an additional capacitor called an auxiliary capacitor is provided in parallel with the capacitor including the liquid crystal and charge equivalent to charge that is lost due leakage etc. is supplied to the capacitor including the liquid crystal.
FIG. 1 is a circuit diagram of a conventional active matrix liquid crystal display device. The active matrix display circuit is generally divided into three parts: a gate driver circuit 2 for driving gate lines (i.e., gate lines, scanning lines) 4, a data driver circuit 1 for driving source lines (i.e., data lines, source lines or signal lines) 5, and an active matrix circuit 3 that is provided with pixels. The data driver circuit 1 and the gate driver circuit 2 are generically called a peripheral circuit.
In the active matrix circuit 3, a number of gate lines 4 and source lines 5 are provided so as to cross each other and pixel electrodes 7 are provided at the respective intersecting points. A switching element (thin-film transistor) 6 is provided to control charge that enters or exits from each pixel electrode 7. Selection is made between the top-gate thin-film transistor (the gate electrode is formed above the active layer) and the bottom-gate thin-film transistor (the active layer is formed above the gate electrode) in accordance with the necessary circuit structure, the manufacturing process, the required characteristics, and other factors. Further, as described above, to prevent a variation in pixel voltage due to leak current, an auxiliary capacitor 8 is provided in parallel with each pixel capacitor.
On the other hand, the conductivity of the thin-film transistor is varied by illumination with light. To prevent this phenomenon, it is necessary to cover each thin-film transistor with a light-interruptive coating (black matrix). The light-interruptive coating is formed so as to also cover the portions between the pixels to prevent color or brightness contamination between the pixels and a display failure due to a disordered electric field at pixel boundaries.
So, the light-interruptive coating assumes a matrix shape and hence is called a black matrix (BM). At first, in favor of advantages in a manufacturing process, the black matrix was provided over the substrate (opposed substrate) that opposes the substrate on which the active matrix circuit is formed. However, recently, because of the need for increasing the area of each pixel (aperture ratio), it is proposed to provide the black matrix over the substrate on which the active matrix circuit is formed.
Various proposals haven made of the structure of the auxiliary capacitor. However, it is difficult to obtain a large capacitance while maintaining the area of the open portion (light-transmissive portion) of each pixel.
The present invention has been made in view of the above circumstances in the art, and an object of the invention is therefore to provide a structure of an auxiliary capacitor which can provide a large capacitance while maintaining the area of the open portion (light-transmissive portion) of each pixel.
According to one aspect of the invention there is provided an active matrix liquid crystal display device comprising a thin-film transistor having a source region to which a pixel electrode is electrically connected; a drain electrode connected to a drain region of the thin-film transistor and formed in the same layer as a source line, the drain electrode having a pattern that covers 50% or more of an active layer of the thin-film transistor; and an auxiliary capacitor formed by using the drain electrode.
With the above configuration, the aperture ratio of the pixel can be increased because the auxiliary capacitor is formed above the thin-film transistor.
Another aspect of the invention attains the above object by forming a conductive light-interruptive film over the active-matrixside substrate, keeping it at a constant potential, and using it as one electrode of the auxiliary capacitor. Since originally the light-interruptive film does not transmit light, the aperture ratio does not decrease even if it is used as one electrode of the auxiliary capacitor.
The active matrix liquid crystal display device of the invention comprises:
(1) a thin-film transistor;
(2) a gate line and a source line formed above the gate line;
(3) a conductive film serving as a light-interruptive film and kept at a constant potential;
(4) a metal wiring connected to a drain region of the thin-film transistor and made of the same layer as the source line; and
(5) an interlayer insulating film formed between the source line and the conductive film, and comprising at least two insulating layers.
In the invention, the thin-film transistor may be of either the top gate type or the bottom gate type as long as the above conditions are satisfied. This is, since the main improvements of the invention relate to the structure above the source line, the structure below the source line (i.e., the positional relationship between the gate line and the active layer) is irrelevant. Also, the interlayer insulating layer may consist of three or more layers.
According to another aspect of the invention, in the above configuration, an auxiliary capacitor having the metal wiring and the conductive film (light-interruptive film) as electrodes and at least the lower insulating layer of the interlayer insulating film as a dielectric is formed in a region where the upper insulating layer of the interlayer insulating film is removed by etching. The dielectric may consist of two or more insulating layers.
According to a further aspect of the invention, in the above configuration, the conductive film (light-interruptive film) overlaps with the metal wiring and has a portion that is in contact with the lower insulating layer.
In the two aspects of the invention just mentioned above, it is effective to employ, as the main component of the lower insulating layer, silicon nitride that is produced stably in semiconductor processes and has a large relative dielectric constant. In this case, the dielectric of the auxiliary capacitor may be composed of only a silicon nitride layer or may have a multi-layer structure of a silicon nitride film and some other coating (for instance, a silicon oxide film).
In this case, the dielectric is made thinner and the use of silicon nitride having a large dielectric constant realizes a large capacitance. In the invention, the thickness of the silicon nitride layer is set at 1,000 xc3x85 or less, preferably 500 xc3x85 or less.
In this configuration, since the silicon nitride film covers the active matrix circuit from above the source lines, the barrier function of silicon nitride resulting from its high moisture resistance, high resistance to ions, etc. can be utilized effectively.
In the invention, it is effective to form the upper insulating layer by using an organic resin, which is easy to be planarized (for instance, polyimide, polyamide, polyimideamide, epoxy, or acrylic). In this case, since the organic resin is insufficient in barrier function (the moisture resistance, the resistance to ions, etc. are low), it is desirable that the lower insulating layer be made of a material exhibiting a superior barrier function such as silicon nitride, aluminum oxide, or aluminum nitride.
In the invention, it is effective to provide the metal wiring in a region of each pixel where disclination (alignment disorder of liquid crystal molecules due to irregularity or a lateral electric field) is prone to occur. Among various kinds of disclination, disclination due to dust or the like can be eliminated by cleaning of a manufacturing process.
However, disclination caused by irregularity in the device structure (for instance, irregularity in the vicinity of a pixel electrode contact) or a lateral electric field cannot be eliminated thoroughly. It is not proper to use, for display, a pixel region where disclination occurs. Conventionally, such a region is covered with a light-interruptive film so as not to serve for display. In contrast, in the invention, the auxiliary capacitor can be provided in such a region, whereby the available area of each pixel can be utilized efficiently.

Active matrix liquid crystal display device having light-interruptive film over insulating film and opening of the upper insulating film

Semiconductor Energy Laboratory Co., Ltd.


Treatment apparatus and method for the enhancement of neurophysiological processes of a patient's visual system utilizes a computer generated display that provides a patient simultaneously with passive visual stimulation images and visual cognitive exercises. The stimulation images include moving elements having edges or points of contrast. The exercises include visual and phonological elements. The invention is used to treat reading, writing and speech disorders, and attention deficit hyperactivity disorder, as well as having broader applications for example in sports sciences.

This invention relates to a system for the enhancement of the neurophysiological processes of a person, in particular those processes associated with reading, writing and speech. The invention was conceived in the context of treating reading, writing and speech disorders but has far broader applications including the treatment of Attention Deficit Hyperactivity Disorder (ADHD) and the enhancement of a person's perception of movement required for example, by sportspeople or defense force personnel.
Since the late nineteenth century it has become increasingly noticeable that a substantial percentage of the population possess no abnormalities in conventional vision, hearing or intelligence, yet display debilitating disorders of reading, writing and speech.
Although there is a connection between these different types of disorders, reading disorders have attracted the most concern and attention and are thought to afflict up to 15% of the world's population. Reading disorders are psychologically and economically damaging to a person, are largely hereditary and have been considered to be incurable.
A growing body of neuroscientific research has linked many of such disorders with neural debilitation's in different areas of the brain.
Several groups of scientists utilising modern non-invasive diagnostic techniques such as functional Magnetic Resonance Imaging (fMRI) or Positron Emission Tomography (PET) have found significant differences in brain activity, in particular in areas of the brain associated with the perception of movement, between those with reading disorders and those without.
The perception of sight begins when visible light contacts the retina at the back of the eye. Photoreceptor cells known as rods and cones are stimulated by this light to produce electrical impulses. These impulses travel from the retinal ganglion cells via their axons and ultimately connect with the visual centres of the brain, in particular the visual cortex. The connection between the retina and the visual cortex includes a small midbrain nodule called the lateral geniculate body. This body is divided into two layers, one of which is part of the magnocellular pathway and the other a part of the parvocellular pathway. The divided signal from these visual pathways continues to the visual cortex and the extrastriate visual cortex at the back of the brain to undergo a multiplicity of complex processes to emerge as a perception of sight.
The magnocellular and parvocellular systems are part of the retino-geniculo-cortical pathway system. The magnocellular pathway has evolved to be able to process rapid movements of low contrast images in conditions of low luminance but with relatively poor colour sensitivity, whereas the parvocellular pathway processes fine stationary detail in conditions of brightness and with greater colour sensitivity.
Research has shown that both pathways are parallel processing systems involved in developing and sustaining an acute kind of depth perception called stereopsis. The magnocellular system is responsible for motion stereopsis, which is vital for normal reading. The parvocellular system is responsible for static stereopsis. Deficiencies in either pathway can affect stereopsis which can lead to an inability of a person to properly process visual images.
Furthermore, it has been suggested in some research that the debilitation of receptive cell fields in the magnocellular pathway causes this parallel processing system to deliver mistimed visual information to the visual cortex. This, it has been hypothesised, causes instability of viewed text in some patients resulting in their reading disabilities.
The visual system is predominantly edge seeking and motion biased in character. Holding a steady fixation on a visual target is indeed not possible. When a steady fixation is induced in a laboratory, the visual image fades.
Oculographic recordings have demonstrated three types of eye movements that occur during fixation: microsaccades, (small, high-speed adjustments of fixation), fixation drift and high frequency tremors.
Saccades used in normal vision bring items of visual interest into the foveal area of the retina for examination under conditions of maximum acuity. Microsaccades are similar to saccades, except that the amplitudes are smaller.
Microsaccades occur about 2 to 3 times per second, along with a slow fixation drift, which in combination prevent fading of the retinal image. The manner in which microsaccades and fixation drifts are interposed is dependent upon an individual's optokinetic control. Such control is in turn influenced by neurophysiological debilitations that are partially non-visual in source.
Oculographic recordings have shown that during reading a stereotyped "staircase" pattern of eye movements occurs, consisting of alternating saccades and periods of fixation. During the pauses, semantic identification and recognition of characters is thought to occur. Each saccade moves the fovea (the portion of vision with the greatest acuity), about eight characters to the night. At the end of a line, a large saccade to the beginning of the next line occurs and the behaviour is repeated.
An optokinetic deficit could lead to reading disorders if it prevents microsaccades from occurring at the required speed and endurance, and if it prevents fixation drift to be controlled with enough endurance. If this deficit is compounded by some language or phonological impairment, then semantic recognition, an essential link in the reading chain, can be even more difficult to achieve.
During more rapid normal reading or the normal viewing of more complex visual images, the eyes employ a healthy motion and static stereopsis (depth perception) to find visual 'cues'. They pause at very small time intervals and look directly at what the brain considers are the more important visual elements and deduces what is in between.
It has been suggested that some normal readers employ a strategy that uses "habitually preferred" patterns stored in their memory. This involves an initial visual scanning phase described as to "look without seeing" in which an internal model is formed in order to then "sec without looking". Finally, there is a rapid model verification phase to "look and see". This requires rapid saccades to move the high acuity area of the fovea to the salient features for verification.
An ability to provide the required saccades, control of fixation drift, recognition of semantics, stereopsis and an adequate visual working memory, are essential prerequisites for good reading.
Furthermore, because of the relationship within the brain of the magnocellular and parvocellular pathways with other neurophysiological processes such as speech, hearing and kinaesthetic and somatosensory processes, an inability to properly process visual images can lead to disorders in these other processes.
From the large numbers of reading disorder treatment providers, few have attempted to search for curative solutions, particularly based on visual causes, in the belief that cures are not possible. Indeed most reading disorder associations and much of the scientific community still support this view.
The beginnings of a visual based curative approach commenced with the development of a simple apparatus called the CAM visual stimulator, developed in Cambridge England in the mid 1970s. The CAM stimulator was developed not for the treatment of reading disorders, but for the orthoptic treatment of pathologic binocularity, a condition where fixation errors of the eyes cause the brain to favour signals from a dominant eye and tends to suppress signals from the weaker eye. The stimulator comprised rotating paper discs covered with painted gratings intended for visual stimulation. This apparatus gained wide interest and exposure for the orthoptic treatment of ocular fixation disorders but with limited success.
Another version of the CAM apparatus was developed in Australia in the late 1970s, and comprised similar rotating discs with painted gratings, but with the addition of a diffuse light source from between the gratings. This second version of the CAM apparatus was the subject of Australian patent application no. 70697/81 by A. M. Lawson. It was also conceived and originally used for the same treatment of pathologic binocularity, although later was used for treatment of visual dyslexia.
Whilst these prior art apparatus achieved some success in treating the fixation disorders for which they were designed, their success in treating reading disorders was limited due to the complex nature of the retino-genicular-cortical pathways and the very limited range of stimulations that the rotating discs could provide. The edges of the stripes that provided the visual cues to the patient had a constant locus of movement, that being a circular path, and only provided the correct stimulation to a limited number of cells in the visual cortex and for a brief period of time as the edge passed through a particular orientation. The only variation in the stimulation was achieved by changing the disc to one with a different spacing and width of stripes. This variation could not be achieved without disruption to the patient's treatment.
The present invention seeks to provide apparatus and method wherein a patient can receive a more complete set of stimulations than was possible with the prior art.

System for enhancement of neurophysiological processes


A reciprocating-type cutting blade device (1) has first and second driving bodies (15, 16) driven reciprocatingly in opposite directions. First and second cutting blade bodies (13, 14) are driven reciprocatingly by detachably engaging the first and second driving bodies (15, 16). Two detachable guide plates (11, 12) slidably hold these driving and cutting blade bodies. A first boundary (Q1) is formed between engaging portions (31, 33) of the first cutting blade body (13) and the first driving body (15), and a second boundary (Q2) is formed between engaging portions (32, 34) of the second cutting blade body (14) and the second driving body (16). The boundaries intersect only at points in a planar view, and the engaging portions (31-34) of the cutting blade bodies (13, 14) and the driving bodies (15, 16) maintain this state of intersection over a whole stroke of reciprocating motion.

1. Field of the Invention
The present invention relates to a reciprocating-type cutting device that has first and second driving bodies formed by a pair of plate-like bodies which are superposed in a thickness direction and reciprocatingly driven in opposite directions by a predetermined driving mechanism, first and second cutting blade bodies formed by a pair of plate-like bodies which are integrally reciprocatingly driven by detachably engaging with non-drive ends of the first and second driving bodies and which have cutting blades having a predetermined shape on lateral edges thereof, and a pair of detachable guide plates which are disposed on both sides of the cutting bodies and driving bodies in the thickness direction so as to hold the cutting bodies and driving bodies slidably.
2. Description of the Related Art
Reciprocating-type cutting blade devices which are used in mowing machines and pruning machines, such as the device disclosed in Japanese Unexamined Patent Publication No. 8-172838 below, for example, are conventionally known. An example of such a device is shown in FIG. 21. A reciprocating-type cutting blade device 200 as shown in FIG. 21 comprises an upper guide plate 201, the base end (the end on the right side of the figure) of which is connected to a mission case (not illustrated), a lower guide plate 202, which is detachably connected to the lower side of the upper guide plate 201, an upper cutting blade body 203 and a lower cutting blade body 204, which are held from both sides between the guide plates 201 and 202 so as to be capable of sliding reciprocatingly therebetween in a longitudinal direction, and an upper driving member 207 and a lower driving member 208 which are reciprocatingly driven in mutually opposite directions by a driving mechanism (not illustrated) that is provided in the mission case. Furthermore, the configuration is such that detachable engagement of respective tips (tips on the non-drive side) of the driving members 207 and 208 with the base ends of the cutting blade bodies 203 and 204 causes the cutting blade bodies 203 and 204 to be reciprocatingly driven integrally with the driving members 207 and 208 in the longitudinal direction.
More specifically, in the example of FIG. 21, keyblade-like connecting parts 203a and 204a having a stepped portion in the width direction are formed at the base ends of the upper cutting blade body 203 and lower cutting blade body 204 respectively, keyblade-like connecting parts 207a and 208a which have a stepped portion in the width direction and which are connected to the connecting parts 203a and 204a by being inserted therein from above or below are formed at the tips of the upper driving member 207 and the lower driving member 208, and the cutting blade bodies 203 and 204 and driving members 207 and 208 are detachably engaged with one another via the connecting parts 203a, 204a, 207a, and 208a respectively.
In the configuration disclosed in Patent Document 1, when the upper cutting blade body 203 and lower cutting blade body 204 are removed, a bolt or the like that connects the upper guide plate 201 and the lower guide plate 202 to each other is first released, and then the lower guide plate 202 is separated from the upper guide plate 201 that is connected to the mission case (not illustrated). If the upper cutting blade body 203 and lower cutting blade body 204 are moved above or below with respect to the driving members 207 and 208 in this state, the cutting blade bodies 203 and 204 can be easily removed from the driving members 207 and 208. Hence, with the configuration of Japanese Unexamined Patent Publication No. 8-172838, there is the advantage that the detachability of the cutting blade bodies 203 and 204 can be improved and maintenance work such as re-grinding the teeth 203b and 204b can be easily performed.
Furthermore, in the abovementioned Japanese Unexamined Patent Publication No. 8-172838, since no particular difference in shape is described between the connecting part 203a of the upper cutting blade body 203 (or the connecting part 207a of the upper driving member 207) and the connecting part 204a of the lower cutting blade body 204 (or the connecting part 208a of the lower driving member 208), these connecting parts are considered to be the same shape. Hence, assuming that the boundary formed between the connecting parts 203a and 207a of the upper cutting blade body 203 and the upper driving member 207 is Q201 and that the boundary formed between the connecting parts 204a and 208a of the lower cutting blade body 204 and the lower driving member 208 is Q202, the boundaries Q201 and Q202 must, in a planar view, coincide with each other once (FIG. 22B) while the cutting blade bodies 203 and 204 make a single stroke, as shown in FIGS. 22A to 22C. Note that, in FIGS. 22A to 22C, the upper cutting blade body 203 and the upper driving member 207 are each denoted by a bold dot-chain line, while the lower cutting blade body 204 and the lower driving member 208 are each denoted by a narrow broken line. Furthermore, when the two boundaries Q201 and Q202 coincide in a planar view as shown in FIG. 22B, there is a risk of interference between steps existing along the boundaries Q201 and Q202, thereby impeding the smooth reciprocating motion of the cutting blade bodies 203 and 204.
In other words, since there is normally a discrepancy owing to dimensional tolerance during manufacture between the thickness dimension of the cutting blade bodies 203 and 204 and the thickness dimension of the driving members 207 and 208, a step is generated by this dimensional tolerance for each of the boundaries Q201 and Q202. Furthermore, if such steps are generated, when the boundaries Q201 and Q202 coincide in a planar view, there is a risk of the steps making contact with each other (interfering each other) due to line contact therebetween, and of the reciprocating motion of the cutting blade bodies 203 and 204 being impeded.


An open shoe, such as a slipper, sandal and the like, comprising a sole with which an insole and an upper are associated. The insole has part of its edges engaged in a corresponding recess, which is provided as an undercut on the upper perimetric side wall of the sole and is formed by an inward rim, which is perimetric and has, for each side of the sole, a discontinuity for guiding insertion of the edges of the insole in the inward lip. The discontinuities are located at at least part of the regions of the side wall where the upper connects.

Open shoes are currently very widely used which are substantially constituted by an upper made of plastics, leather or fabric, by an insole generally made of EVA (ethyl vinyl acetate) and by a sole with a tread, also made of a plastic material that is slightly more rigid than the insole, generally made of injected expanded EVA.
As mentioned, the insoles are generally made of EVA, which ensures high standards of softness and strength and further allows to avoid absorbing water in the case of beach-type slippers or sandals.
After its production, the insole must be coupled to the previously formed sole.
Currently, the only method used to couple the insole to the sole is the interposition of adhesive between them.
The process for adhesive bonding of the insole to the sole is extremely complex and difficult.
In the case of a sole made of EVA, for example, the two components are washed with solvents, a primer is applied, irradiation with UV rays is performed in order to activate the primer, and adhesives are applied to the two parts; this is followed by reviving in an oven and finally by coupling with subsequent pressing.
The upper can be manufactured separately and fixed during the adhesive bonding of the insole and the sole, optionally inserting its lateral edges between said insole and the sole or by gluing said lateral edges to the sides of the sole; generally, with this procedure the outer side of the insole is exposed and must therefore ensure an aesthetic finish.
Another system for fixing the upper to the sole is of the mechanical type and uses mushroom-shaped tabs, which protrude from the edges of said upper and are inserted in appropriately provided undercut slots formed in the sole; in this case, the insole is glued inside a tray, which is shaped complementarily to said insole, and accordingly the outer side of the insole does not remain exposed.
It can be noticed that these manufacturing systems for open shoes have aspects that can be improved.
First of all, it is evident that the method for adhesive bonding of the insole to the sole is extremely laborious, long and expensive.
This is even more true for materials such as EVA, which require particular care during adhesive bonding steps.
Secondly, the coupling between the insole and the sole that is provided by means of adhesive is easily affected by external agents, which therefore can reduce it.
Moreover, the materials of said shoes are difficult to recycle, since it is particularly difficult to separate the insole from the sole, which are typically made of different materials that are often not compatible during recycling.
International Application WO2004/026062 discloses an improvement of the above described additional fixing system, in which the mushroom-shaped tabs that protrude from the edges of the upper pass through corresponding passages provided in the insole and engage the corresponding undercut slots in the sole.
This improvement allows to avoid gluing the insole to the sole and also locks said insole mechanically.

Open shoe, such as a slipper, sandal and the like


A system, method and program product for modifying data packets being communicated between a client and a Web application to enhance the Web experience of a user. A system is disclosed for enhancing searches being performed by a search engine application, and monitoring data packets passing through a network node to identify a data packet containing an original search query; modifying the data packet containing the original search query to create a modified search query; and forwarding the modified search query to the search engine application in place of the original search query.

Currently, advertising remains a primary means for deriving revenue for websites and other web-based applications. However, the entire web-based advertising revenue model favors a very small number of sites that are positioned to drive users to their sites. For example, general purpose search engine websites, such as GOOGLE, YAHOO, ASK.COM, etc., have a distinct economic advantage since there are only a handful of such sites that provide an indispensable service to all Web users. Such sites can further harness their economic position by controlling search results. For example, search sites can control search results based on who pays to have their listing placed higher in the rankings. Thus, content is often skewed towards what the advertisers want, as opposed to what to users want.
This model unfortunately provides little opportunity for the users themselves (who are the ones actually visiting the sites where the advertising occurs) and other third party providers (who facilitate the process) to economically benefit. For instance, a service that provides wireless Web access, e.g., at an airport, hotel, etc., is not able to participate in the advertising revenue model in an effective manner even though they are providing the gateway for countless users to access popular websites. Even if the wireless service implements a portal page that is displayed after a login or connection, a typical user will quickly navigate to other websites of interest. Thus, the advertising revenue is limited for such a service.
Accordingly, a need exists for an improved infrastructure for sharing advertising revenue in which revenue can be shared with the third party providers who facilitate the networking process and the users who drive the process.

System and method for modifying internet traffic and controlling search responses


Disclosed herein is a method of forming an element isolation film of a semiconductor device. An aluminum oxide film of a high wet etch rate is used as a pad oxide film, a trench is formed, and top and bottom edges of the trench is made rounded while removing some of the aluminum oxide film by a cleaning process. It is thus possible to make the top and bottom edges of the trench rounded without using polymer. It is also possible to minimize generation of a moat due to a step between a field region and an active region in a cleaning process before a gate oxide film is formed.

1. Field of the Invention
The disclosure generally relates to a method of forming an element isolation film of a semiconductor device. More particularly, the disclosure relates to a method of forming an element isolation film of a semiconductor device in which an aluminum oxide film of a high wet etch rate is used as a pad oxide film, trenches are formed, and top and bottom edge portions of the trenches are then made rounded while removing some of the aluminum oxide film through a cleaning process.
2. Brief Description of Related Technology
In a manufacture process of semiconductor devices, an element isolation film is formed in order to isolate an active region and a field region or elements. As the devices become higher integrated and miniaturized, however, the element isolation film is formed by etching the semiconductor substrate at a given depth, thus forming trenches, and then burying the trenches with an insulating film. This element isolation film is formed in such a manner that a pad oxide film, a pad nitride film and a photoresist film are formed on the semiconductor substrate, the photoresist film is patterned using an isolation mask, the pad nitride film, the pad oxide film and the semiconductor substrate are etched at a given depth using the patterned photoresist film as a mask, thus forming trenches, and the trenches are buried with the insulating film. In this time; the pad nitride film is formed by LPCVD. If the pad nitride film is directly brought into contact with the semiconductor substrate, however, a crystal defect is caused in the semiconductor substrate because of stress between the pad nitride film and the semiconductor substrate. Thus, before the pad nitride film is formed, the pad oxide film is formed. In this time, the pad oxide film is formed using a thermal oxide film of a low wet etch rate.
Meanwhile, in a trench etch process for forming this trench type element isolation film, the roundness of the top edges of the trenches has an influence on characteristics such as a cell threshold voltage and refresh in a DRAM, and affects characteristics such as erase and standby current in a flash memory device. Accordingly, in order to make the top edges of the trench rounded, an etch process is performed using polymer generated when the pad nitride film is etched.
The etch process using polymer will be described in short. If the pad nitride film, the pad oxide film and the semiconductor substrate are etched so as to form the trench, an etch gas and the pad nitride film show a polymerization reaction. While polymer is generated, it is accumulated at the top edges of the trench. The accumulated polymer has an etch selective ratio different from that the semiconductor substrate. Thus, as the accumulated polymer serves as an etch stopper when the semiconductor substrate is etched, the top edges of the trench where polymer is accumulated are rarely etched compared to the center of the trench. Accordingly, the top edges of the trench are made rounded.
It is, however, very difficult to uniformly deposit polymer on the sidewalls of the pad oxide film so as to make the top of the trench rounded using polymer. Furthermore, there are problems in that foreign materials are generated in an etch apparatus as polymer is generated, and it is difficult to secure reappearance depending on a characteristic of an etch apparatus.
Meanwhile, the pad oxide film is formed using the thermal oxide film of a low wet etch rate. It is thus difficult to remove the pad oxide film in the cleaning process before the gate oxide film is formed. Furthermore, there is a problem in that a moat deepens because of a step between the field region and the active region because a gap filling material of a relatively high etch rate is first etched when the pad oxide film is removed.

Method of forming an element isolation film of a semiconductor device


Antisense compounds, compositions and methods are provided for modulating the expression of RhoG. The compositions comprise antisense compounds, particularly antisense oligonucleotides, targeted to nucleic acids encoding RhoG. Methods of using these compounds for modulation of RhoG expression and for treatment of diseases associated with expression of RhoG are provided.

Upon the addition of certain exogenous factors known as mitogens, specific biochemical processes are triggered in a cell which result in the division of the cell into two new daughter cells. This process, subdivided into phases denoted G.sub.1, S, G.sub.2 and M, is known as the cell cycle. The first phase, G.sub.1, is a proliferative phase. This is directly followed by the S phase involving DNA synthesis, and finally the G.sub.2 /M phase during which the cell actually divides. This cycle is highly regulated and involves the orchestrated and ordered expression of a number of genes.
RhoG, a member of the Rho subfamily of small GTPases, is a protein whose transcription is induced within 12 hours of mitogen treatment. Furthermore, the degree of induction, as determined by mRNA level, is in direct proportion to the mitogen concentration administered. These data suggest that RhoG is necessary for entry into the DNA synthesis step (S phase) of the cell cycle which begins 14 hours after stimulation (Vincent et al., Mol. Cell. Biol., 1992, 12, 3138-3148).
In addition, all Rho proteins have been shown to affect the dynamic organization of the actin cytoskeleton whose regulation mediates many cellular processes. For example, changes occurring during cell cycle progression such as those associated with cell rounding and pinching off during mitosis are dependent on the appropriate assembly and disassembly of the cytoskeleton.
The involvement of RhoG in cell cycle progression and its reported role in pathways leading to actin polymerization suggests a link between RhoG and changes in cell shape during the cell cycle.
In NIH 3T3 cells, RhoG was shown to modulate the density to which the cells would grow. The conclusion drawn from this observation was that RhoG affects an actin-dependent signal transduction pathway mediating the level of contact inhibition through surface signals (Roux et al., Curr. Biol., 1997, 7, 629-637).
Finally, RhoG seems to play a role in the development of cancer. Cellular transformation and acquisition of the metastatic phenotype are the two main changes normal cells undergo during the progression to cancer. RhoG has been shown to participate in a signaling pathway involving ras-mediated transformation (Roux et al., Curr. Biol., 1997, 7, 629-637). In these studies it was shown that the activity of RhoG is required for cellular transformation.
Currently, there are no known therapeutic agents which effectively inhibit the synthesis of RhoG. To date, strategies aimed at inhibiting RhoG function have involved the use of bacterial enzymes such as the Clostridium botulinum C3 exoenzyme which ADP ribosylates the protein rendering it inactive or agents (natural enzyme inhibitors) to inhibit the posttranslational modification (isoprenylation) of RhoG (Narumiya and Morii, Cell Signal, 1993, 5, 9-19). However, these targeting strategies are not specific to RhoG, as many proteins undergo similar posttranslational modifications. Consequently, there remains a long felt need for additional agents capable of effectively inhibiting RhoG function.


A method for adapting the steering feel for a driver of a vehicle at an input element of the vehicle is described. The vehicle has a steer-by-wire steering system. The method comprises creating a reference of the steering feel. The method further comprises selecting scaling factors for the reference model such that characteristics of the steering feel remain constant for different steering ratios. The method further comprises adapting the steering feel using the scaling factors.

The present disclosure relates to a method for adapting the steering feel with the aid of an input element, for example, a steering wheel, for a driver of a vehicle, wherein the steering system is a steer-by-wire steering system.
Steering feel, in this case, is the combination of driving experience, that is, the steering torque at the steering wheel, the steering ratio, i.e., the ratio between the steering wheel and the steering angle, and the vehicle response, which reflects the feedback of the steering input via the vehicle to the driver.
Steering systems including a mechanical connection of the steering wheel to the steering angle are known in the related art. It is also known that steer-by-wire steering systems are possible, wherein there is no mechanical connection between the steering wheel and wheels to be steered.

Adaptation of the steering feel in steer-by-wire steering systems


The present invention concerns a magnet assembly for a sputtering chamber that allows for an even erosion of a target in the sputtering chamber so that atoms on the target are deposited on a wafer. This magnet assembly has a side magnet which is thinner than a center and ring magnet. This side magnet's centerplane is positioned above the centerplane of the other magnets. Additionally, this magnet assembly uses a center magnet in the range of substantially 350-450 Gauss and a side magnet of in the range of substantially 680-780 Gauss so that an asymmetrical magnetic field will be created which will cause an even erosion of the target and prevent re-deposition.

This invention relates to a magnet assembly used in a sputtering chamber. In sputtering chambers, a magnet assembly is typically used to confine plasma gases in an area on the surface of a target. The transfer of momentum as ions strike the target causes atoms in the target to be ejected from the target and deposit on silicon wafers. The target may be an alloy such as tungsten silicide. The gas in the sputtering chamber during use is at a low pressure and gas ions such as argon gas ions are created to sputter metal from the target. These ions are confined by the magnetic field of a magnet assembly. The magnet assembly rotates behind the target at a rate of about 1 revolution per second so that the plasma sweeps across different areas of the target.
FIG. 1 is a top view of a prior art Anelva PMC magnet assembly which works with targets that are 280 millimeters in diameter. This magnet assembly uses a center magnet 2 which is oriented with the south pole on the top (directly behind the target), and ring magnets 4, which surround the center magnet 2. These ring magnets are oriented with the north on top. The whole magnet assembly 6 is symmetric about the two axes 3 and 5.
FIG. 2 is a cross-sectional view of a sputter target 11 after use with the Anelva PMC magnet assembly shown in FIG. 1. Notice that the target 11 has areas 10 of uneven erosion. This uneven erosion is caused by the plasma being contained over some areas of the target more than other areas of the target during the revolution of the magnet assembly. This uneven erosion is problematic because the metals used in the target are expensive, and any unused metal is wasted. Additionally, re-deposition of metal occurs in area 12. Re-deposition occurs when metal sputtered from a part of the target is re-deposited on other parts of the target. Eventually, as the target is heated up and cooled down through the sputtering process, metal from the re-deposited area 12 may flake off and fall onto the wafer, causing imperfections.
A prior art magnet assembly that has a somewhat more even erosion of the target is shown in the prior art FIGS. 3 (a) and (b) . FIG. 3 (a) is a cross-sectional view of the Anelva SPMC magnet assembly. This magnet assembly 21 uses a center magnet 20, thirty-two ring magnets 22 of which four are shown in FIG. 3 (a) , and twenty-three rubber side magnets 26. The magnetic field strengths of the ring magnet section 22, the center magnet section 20 and the side magnet section 26 as measured at the surface of these magnet sections are 1550 Gauss, 960 Gauss, and 500 Gauss respectively. The rubber side magnets 26 have the disadvantage that they may become demagnetized if the magnet assembly becomes heated during the sputtering process. Additionally, the Anelva SPMC magnet assembly 21 must be used with a 300 mm diameter target. If the Anelva SPMC magnet assembly is used with smaller targets, the shielding on the sides of the target may be damaged which would contaminate the silicon wafer. Additionally, the sputter target shielding must be re-designed to accommodate the larger diameter target.
FIG. 3 (b) is a top view of the Anelva SPMC magnet assembly 21. The ring section 22 is symmetric across axes 23 and 25. The center magnet section 20 is located asymmetrically with respect to axis 25 and the side magnet 26 is on one side of axis 25.
It is an objective of the present invention to have a magnet assembly that increases efficiency of the target erosion in a sputtering chamber. Another object of the present invention is to have a magnet assembly that erodes the target surface of 280 mm diameter targets in a more even fashion.

Magnet assembly for enhanced sputter target erosion


Dental instrumentation for use in guiding a cutting tool to remove tooth structure from a working tooth is prepared. A digital model of cutting guide shell structure for placement around a portion of the tooth to be treated is combined with preset tool movements to be made by the cutting tool by one or more processors to define final cutting guide data corresponding to final cutting guide structure for guiding the cutting tool. A digital model of a fixation instrument configuration for fixing the dental instrumentation to an adjacent tooth to the working tooth is combined with the final cutting guide data by one or more processors to define final instrument configuration data corresponding to a final instrument configuration for releasably fixing the dental instrumentation to the adjacent tooth and for guiding the cutting tool in the removal of the tooth structure from the tooth to be treated.

Complete, intact teeth that are cosmetically desirable, wear evenly, and provide a balanced bite are the objectives of patients. Over time, however, problems arise in teeth due to accidents, deterioration from wear and tear, decay due to any of poor oral hygiene, insufficient oral care practices, consumption of certain foods such as sweets, use of tobacco, disease, medications, certain congenital conditions, and environmental effects, tooth movement, etc. In some instances, teeth simply never achieve a cosmetic appearance desired by a patient. To this end, dental practitioners and their patients have relied on a variety of methods to repair these deformities and weaknesses of the teeth.
The repair of teeth often requires preparation and modification of the exterior shape and size of a tooth to be able to receive various prostheses or restorations such as crowns, inlays, onlays, bridges, and veneers. Also, to prepare the appropriate prosthesis or restoration, either impressions or 3-dimensional scanning must be conducted of the original unmodified tooth and often the modified tooth at a later time. Dental practitioners often place a temporary prosthesis over the modified or prepared tooth while a permanent prosthesis is manufactured, but the use of such a temporary device and the removal of any cement used to place the temporary device over the prepared tooth may create a discrepancy between the prepared tooth and the internal configuration of the prosthesis.
Recently, systems and methods have been developed by Viax Dental Technologies, LLC to form a guiding device for use in preparing a working tooth requiring treatment to receive a restoration along with the placement of a previously prepared restoration corresponding to the configuration of the guiding device during the same visit, thus obviating the need for a temporary prosthesis. Such systems, methods, and devices are disclosed in U.S. Patent Application Publication No. US20100192375 A1, now abandoned; U.S. Patent Application Publication No. US20100196842 A1, now U.S. Pat. No. 8,640,338; and U.S. Patent Application Publication No. 2014/0248577 A1 ("the '577 Publication"), the disclosures of each of which are hereby incorporated by reference herein. Still, further improvements are needed to more efficiently and reliably treat the teeth of patients for receiving restorations and other prostheses.

System for preparing teeth for the placement of veneers


An injection speed control valve for controlling the speed of flow of operating fluid from an operating fluid source of the die-casting machine to an injection cylinder, a pressure compensation valve for controlling the pressure of the operating fluid to a predetermined differential valve pressure to be coupled to the injection speed control valve, a bypass duct communicating the operating fluid source and the injection speed control valve, a logic valve for on-off controlling the flow of the operating fluid through the bypass duct, and a solenoid valve for on-off operating the logic valve, are provided. The speed of injection by the injection cylinder is controlled by switching the logic valve with the solenoid valve while maintaining a predetermined opening degree of the injection speed control valve.

1. Field of the Invention
This invention relates to a method of and an apparatus for injection speed control in a die-casting machine, utilized particularly for performing superlow speed injection employed for high quality die-cast molding.
2. Description of the Related Art
Heretofore, for obtaining forged metal products die-cast molding has been extensively utilized. In the die-cast molding, molten metal is injected into the cavity of a die by an injection plunger driven by an injection cylinder. The speed of injection is controlled by an injection speed control valve.
A usual die-cast molding is made by a standard injection process. In the process, at the beginning of the melt injection a low injection speed of about 0.3 m/sec. is set, and after the reaching of a die gate by the leading portion of the melt the injection speed is increased to about 3.0 m/sec. to quickly charge the melt into the cavity.
Meanwhile, high quality die-cast molding, for producing high mechanical strength, highly gas-tight forging, is made by a superlow speed injection process. In this process, a superlow injection speed of 0.01 to 0.5 m/sec. is set, and at the beginning of the injection the injection speed is set to 0.05 to 0.25 mm/sec. to prevent the melt in an injection sleeve from being cooled and solidified.
The standard and superlow speed injection processes have different injection speed ranges.
However, with the current injection speed control valves an extremely broad injection speed range can not be covered by merely changing the settings.
This means that the standard and superlow speed injection processes require respective exclusive injection speed control valves having different specifications.
However, installation of the exclusive die-cast machine for the individual injection processes poses problems in the installation space and installation cost. It is considered to install two different injection speed control valves in a single die-casting machine and switch these valves for the individual processes. Such a system, however, inevitably leads to complications of the control system and piping, making it difficult to elevate its utility.
An object of the invention is to provide a method of and an apparatus for injection speed control for a die-casting machine, which permit expansion of the injection speed control range of the injection speed control valve with simple means.

Method of and apparatus for injection speed control in die-casting machine


A system for error correction coding and decoding information is disclosed. In one embodiment, the first and second encoders are each configured to encode the information, wherein the second encoder has a higher capability than the first encoder. First and second decoders are configured to recover the information, wherein the second decoder recovers the information encoded by the second encoder only if the first decoder cannot recover the information.

Error detection and correction codes are widely used in communication and storage systems to provide reliable information transmission and recovery. Communication systems can be susceptible to errors in the form of signal degradation which results in distortion or noise in transmitted signals. Signal degradation can also result in a loss of transmitted information. Systems which are susceptible to signal degradation or information loss include wireless or mobile communications systems such as cellular telephone, microwave systems, satellite communications systems, digital television and high speed communications systems such as those that utilize an xDSL communication standard.
Memory storage systems can also be susceptible to errors which result in a loss of stored information. The errors can occur from reliability degradation which causes physical failures within individual memory storage devices. Failure mechanisms which can result from reliability degradation include time dependent dielectric breakdown and electromigration, both common in complementary metal oxide semiconductor (CMOS) integrated circuits.
A number of error correction techniques exist which can be used to detect and correct errors in information, or counteract the effects of signal degradation. The error correction techniques typically use additional amounts of information which can be added to the original stored or transmitted information. The additional information is generated from an error correction code, and is used to check the validity of the original information. The most common types of error correction codes are convolutional (tree) codes and block codes. With these codes, the information is separated into blocks, and each block is encoded into a larger block of data.
Error correction codes can have varying abilities to detect and correct errors. Stronger error detection and correction codes, for example, will allow information to be transmitted and received with lower error rates. These stronger error correction codes usually require more powerful processors or controllers to execute the codes and transmit or store the additional error correction code bits.
The strength of the error correction code is typically chosen for a particular system or application. Once a particular error correction code is chosen for the system or application, the associated execution time or latency time is fixed. In other words, if a higher degree of reliability is required, and high latency error correction routines are used, the system or application will always have the same throughput, even if the reliability requirements are later reduced.

System for error correction coding and decoding

Hewlett-Packard Development Company, L.P.


Magnetic separator devices that are useful in separating finely divided solids in the presence of liquids, vapors, and gases that are hazardous, that is, they may be corrosive, flammable, toxic, or a combination of such hazards, and the use of such devices in processes for the manufacture of chlorosilanes.

Magnetic separation is well described in the literature. Jan Svoboda has reviewed the state of magnetic separation technology in "Magnetic Methods for the Treatment of Minerals", Developments in Mineral Processing-8, ISBNO-44-42811-9, Elsevier, N.Y., 1987. Other general references include "Magnetic Separation", Perry's Chemical Engineers' Handbook, McGraw-Hill, New York, 7th Edition, 1998, pp. 19-49 and John Oberteuffer and Ional Wechsler, "Magnetic Separation", Kirk-Othmer Encyclopedia of Chemical Technology, 3rd edition, 1978, John Wiley & Sons, New York, Volume 15, pp. 708-732.
Several patents have issued dealing with vibrating matrix separators, namely, Frantz, in U.S. Pat. No. 2,074,085, that issued Mar. 16, 1937 describes a magnetic separator for fine powders. Frantz disclosed that separators based on the use of pulleys, rotors or belts are unable to make efficient separations when fed fine powders. Frantz's magnetic separator consists of an electromagnetic solenoid, a casing vessel and attractor screens as the matrix. In one embodiment of the invention, the matrix is vibrated by means of an eccentric weight fixed to a vertical shaft that is rotated by a motor.
Mechanical means is not the only method of vibrating the matrix; it is also possible by electromagnetic means. Kolm discloses in U.S. Pat. No. 3,567,026 that issued Mar. 2, 1971 and U.S. Pat. No. 3,676,337 that issued Jul. 11, 1972 the vibration of a fine steel wool matrix in a direct current solenoid separator using alternating current coils. Both Kolm patents describe a magnetic separator that includes one direct current coil and three alternating current coils. The direct current coil provides the background magnetic field that magnetizes the steel wool matrix to perform the main separation. The first alternating current coil is a demagnetizing coil to remove residual magnetization from the direct current coil. The other two alternating current coils create an eddy current to vibrate the steel wool matrix to shake loose retained components. A process is claimed for switching off the direct current field and applying the alternating current fields to flush magnetic fines out of the matrix. In addition to ferromagnetic wool, copper wool is optionally added to intensify the vibration. The eddy current is in the upper sonic range on the order of 18,000 to 20,000 cycles per second, and up. Perforated plates can optionally be used for flow distribution.
Although the Kolm patents are chiefly concerned with wet slurries, dry particulate removal is also contemplated from a stream such as fly ash contained in smoke from a power station.
Oder, in U.S. Pat. No. 4,087,358, that issued May 2, 1978 describes methods and apparatus for vibrating the matrix of a clay slurry magnetic separator to dislodge impurities during the flushing step of the operation. Vibratory hammering, shaking the matrix by auxiliary alternating current coils, and the use of high intensity sound, are suggested means of applying auxiliary mechanical forces to the matrix.
Wulff, in U.S. Pat. No. 2,372,665, that issued Mar. 20, 1945 describes a method of separating white cast iron powder into pearlite-rich and carbide-rich fractions by heating the mixed feed to 215° C. so that the carbide particles are above their Curie temperature and therefore not attracted to the magnetic field.
Collin in U.S. Pat. No. 4,000,060 that issued Dec. 28, 1976 describes a magnetic separator for hot powder mixtures. The separator consists of a drum roll separator with water-cooled permanent magnets. The non-magnetic rollers are set in a temperature controlled fluidized bed. The feed powder is fluidized with an inert gas such as nitrogen.
Inoue in U.S. Pat. No. 4,836,914, that issued Jun. 6, 1989, describes a process using a magnetic separator to remove iron particles from petroleum oil. The preferred temperature of operation is up to 400° C. This method has advantages over other treatment alternatives such as hydroxide treatment. It is especially advantageous for high viscosity oils.
Sometimes it is desirable to heat the matrix to aid in cleaning it between cycles. Dijkuis in U.S. Pat. No. 4,353,730 that issued on Oct. 5, 1982 describes a method for cleaning a magnetic separator matrix by heating a cleaning fluid above the Curie temperature of the matrix material in order to release magnetic fines.
There is disclosed an example of magnetic separation involving particles that are abrasive in U.S. Pat. No. 6,262,843, that issued on Jul. 24, 2001 to Wiesner in which it is taught how to remove impurities from the machining of semiconductor material wherein particles from saw blades or lapping plates can be magnetically separated from the cutting fluid used during the machining process for silicon.
Hazardous powders are those finely divided solids that are corrosive, flammable, toxic, or a combination of such hazards. Powders that are inherently hazardous must be completely contained inside the magnetic separator apparatus with a highly reliable leakage prevention design. Sometimes, hazardous dry powders are processed simultaneously with hazardous gases, vapors, or liquids. The hazardous fluids also contribute to the difficulty of operating a magnetic separator on such powders.
Confining such materials within the separator is very important. Small leaks of corrosive materials can result in corrosion failures of the containment vessel that lead to large, even catastrophic leaks. Corrosive and toxic materials can injure employees. Flammable materials can cause fires and explosions when they leak from a contained, inert environment to the atmosphere. Thus, the integrity and reliability of the containment system is very critical.
Additional problems are introduced when the separation is made at higher than ambient temperatures, higher than ambient pressures or when the solids are especially abrasive. High temperature operations make it impossible to use many polymer or elastomer materials that are available at lower temperatures. These materials might be the preferred material of construction for corrosion or abrasion resistance properties. At high temperatures, many polymers and elastomers are seriously weakened and thus fail in operation.
Pressure adds to this problem if the materials of construction are used for pressure containment or sealing. Loss of containment during operation above ambient pressure permits rapid leakage of process materials out of the separator to the atmosphere, thus creating a hazardous incident such as a fire or explosion. Similar hazards can be created inside the separator if it operates at vacuum so that air is drawn into the device on loss of containment. In addition to hazardous consequences on loss of containment, quality problems might also result on a process. An example would be a process where oxygen is a contaminant and the magnetic separator is operating under vacuum.
Abrasion of materials of construction of the apparatus is also a problem. The containment vessel can be eroded resulting in loss of containment. Seals are especially prone to containment failure, so avoidance of rotating mechanical seal faces or similar design features is critical. Detection of failures is also highly desirable.
There are many types of magnetic separators in industrial today. Several types of high gradient magnetic separators are known to the inventors herein. One is an enclosed belt separator including the MagnaCat® separator manufactured by Merrichem Company, located in Houston, Tex.
In U.S. Pat. No. 4,406,773, Hettinger et al. describe the use of a Sala high gradient carousel magnetic separator to separate samples of catalyst mixed with water. It is presumed that this separation of the slurry is made near ambient temperature. In U.S. Patent 5,147,527, Hettinger describes the use of a belt roller magnetic separator, especially the Eriez Magnetic Rare Earth Roll Permanent Magnetic Separator fitted with an electrostatically conductive belt. Separation is contrasted with an Eriez high gradient magnetic separator, but throughput of the high gradient magnetic separator was limited. In U.S. Pat. No. 5,190,635, a preferred process is described wherein the catalyst magnetic susceptibility and Curie temperature are controlled by processing conditions. In U.S. Pat. No. 5,985,134, a preferred separation temperature of up to 260° C. is stated. In U.S. Pat. Nos. 5,972,208 and 6,059,959, the optional use of a catalyst cooler is described to reduce the catalyst temperature from preferred regenerator temperature of about 700° C. to a cooled temperature of 38° C. to 260° C. Goolsby and Kowalczyk in EP 0951940 A2 disclose a preferred samarium/cobalt magnet to allow efficient operation up to 232° C. (450° F.) "without extensive cooling equipment".
Another modern version of the catalyst separator has been developed by Nippon Oil Company. Ushio and co-workers in U.S. Pat. No. 4,359,379 that issued Nov. 16, 1982 describes magnetic separation of the catalyst using a Sala high gradient magnetic separator with a ferromagnetic matrix. As noted therein, the inventors note that the drum-type magnetic separator can remove iron dust, but is "useless" in separating the metal deposited catalyst. In some examples, air is used as a carrier fluid in the high gradient magnetic separator. There is no indication therein that the separations were made at high temperature, and one example shows operation at room temperature. Ino and co-workers in U.S. Pat. No. 5,520,797 that issued on May 28, 1996 also used a Sala high gradient magnetic separator with a ferromagnetic matrix and gas carrier. These devices have problems that limit their effectiveness and usefulness for magnetically separating hazardous dry powders.
The belt separator device can be enclosed in a pressure tight (or nearly pressure tight) containment vessel. Such a device is described in the U.S. Patents to Hettinger, Goolsby and co-workers. Such devices are presently marketed under the trade name of MagnaCat to separate fluidized catalytic cracker catalysts. The belt separator has certain disadvantages. Since the feed powder lies on a belt during the separation processing, particle-to-particle attraction forces interfere with the magnetic attraction forces. Therefore, particle cohesion and static electricity can make magnetic and non-magnetic particles stick to each other. When this happens, it is difficult to separate the particles into magnetic and non-magnetic streams. Another problem with such devices is belt wear. When the belt wears due to degradation, corrosion, abrasion or stretching, it must be replaced. This is especially difficult if the process is hazardous. In addition to natural particle attractions, the belt can actually increase particle-to-particle forces. Static electricity can build up on a rotating belt device, especially if the belt is a non-conducting elastomer. As indicated Supra, the belt separator can be enclosed in a containment vessel.
Another type of separator is the matrix/canister high gradient magnetic separator. Due to its matrix construction, this separator has intense local magnetic gradients that improve separation. By vibrating the device, particle-to-particle interactions are minimized. One method used to vibrate the device is to connect the canister with a flexible rubber boot around the full diameter of the canister. Such a rubber boot, however, is problematic with corrosive materials and hot, pressurized processing conditions. Operation of the device above ambient pressure is also difficult because the flexible boot tends to expand due to the internal pressure. This type of boot is also difficult to make reliable because it is as large as the diameter of the canister. For a twelve inch canister, the boot must be a minimum of twelve inches in diameter. The entire high gradient magnetic separator can be installed in a pressure tight container, but this adds to the capital expense of the equipment, and it adds to the complexity of maintenance operations.
The apparatus of the invention disclosed herein is a vibrating matrix, high gradient magnetic separator. It can process powders, vapors, liquids and gases that are corrosive, flammable or toxic. It permits operation at above ambient temperature and above ambient pressure. It is especially suitable for highly abrasive fine powders. It also provides for safe containment of process hazards.
The processes set forth herein are processes for manufacturing chlorosilanes.


The invention relates to a method for producing a bipolar transistor. A semiconductor substrate is provided that encompasses a collector area of a first conductivity type, which is embedded therein and is bare towards the top. A monocrystalline base area is provided and a base-connecting area of the second conductivity type is provided above the base area. An insulating area is provided above the base-connecting area and a window is formed in the insulating area and the base-connecting area so as to at least partly expose the base area. An insulating sidewall spacer is provided in the window in order to insulate the base-connecting area. An emitter layer which forms a monocrystalline emitter area above the base area and a polycrystalline emitter area above the insulating area and the sidewall spacer is differentially deposited and structured, and a tempering step is carried out.

Although applicable in principle to arbitrary bipolar transistors, the present invention and the problem area on which it is based will be explained with regard to DPSA transistors.
DPSA (double polysilicon self-aligned) transistors, as disclosed e.g. in T. F. Meister et al., IEDM Technical Digest 1995, pp. 739–741, use, as p+-type base terminal and as n+-type emitter contact, p+-type polysilicon and respectively n+-type polysilicon layers that are especially deposited therefor. In this case, in the emitter window, the n+-type polysilicon emitter layer is insulated from the p+-type polysilicon layer of the base terminal by a spacer in a self-aligned manner. On account of its lateral and vertical scalability and the small parasitic capacitance and resistance components, the DPSA transistor structure is best suited to very high speed applications. In this case, the DPSA transistor may contain both an implanted Si base and an epitaxially deposited SiGe base.
FIG. 4 is a schematic illustration of a known DPSA transistor as disclosed in T. F. Meister et al., IEDM Technical Digest 1995, pp. 739–741.
In FIG. 4, reference symbol 1 designates a silicon semiconductor substrate, 10 designates an n+-type subcollector region in the form of a buried layer, 20 designates p+-type channel blocking regions, 25 designates an n−-type collector region, 30 designates a p-type base region, 35 designates a CVD insulation oxide layer, 15 designates a LOCOS insulation oxide layer, 40 designates a p+-type base terminal, 45 designates an n+-type collector contact, 55 designates a double spacer comprising silicon oxide/silicon nitride, and 50 designates an n+-type emitter contact.
FIGS. 5a–c are schematic illustrations of the method steps with regard to the emitter contact of a customary method for the production of a DPSA transistor, in contrast to FIG. 1 reference symbol 55′ designating a single spacer made of oxide. Reference symbol F designates the emitter window in the layers 35 and 40.
In order to produce the n+-type emitter contact, in the case of the DPSA transistor, after the formation of the oxide spacer 55′ covering the sidewalls of the emitter window F, on the active p+-type base region, an n+-doped (implanted or in situ doped) n+-type polysilicon layer 60 is applied in polycrystalline fashion on the active transistor zone and also on the surrounding insulation regions.
Afterward, the n+-type polysilicon layer 60 is patterned anisotropically by means of a phototechnology for the purpose of forming the final emitter contact 60 and the n+-type dopant is driven e.g. 20 nm into the underlying monocrystalline Si material of the base region 30 by means of a thermal step (FIG. 5c). This gives rise to an n+-type emitter composed of a monocrystalline portion 31 and a polycrystalline portion 50.
In this production method, a natural oxide film 36 of 0.5–2 nm forms in the time between spacer etching and n+-type polysilicon emitter deposition on the active transistor zone between the monocrystalline and polycrystalline parts of the emitter. The thickness of said natural oxide layer 36, which can be controlled only with extreme difficulty, influences both the current gain appreciably and the emitter resistance of the DPSA transistor.
In the case of DPSA transistors having an implanted Si base, the natural interface oxide 36 was necessary in order to achieve a sufficiently high current gain. By contrast, in the case of an integrated SiGe base, the natural oxide layer 36 is no longer necessary since such DPSA transistors already achieve sufficiently high current gains solely on account of the Ge content in the base. Moreover, with increasing lateral scaling of the emitter window F in these DPSA transistors, the rise in the emitter resistance becomes apparent in a disadvantageous manner to an ever greater extent. This is because this rise in the emitter resistance leads to a significant reduction in the limiting frequency and nowadays limits the lateral scalability of the DPSA transistor.
This is caused by said natural interface oxide 36 in the poly/mono intermediate layer of the n+-type emitter and also the limited conductivity of the n+-type polysilicon layer in the narrow emitter window F of the DPSA transistor.
On the other hand, SiGe bipolar transistor structures that deviate from the DPSA transistor are known, in the case of which the integrated n+-type emitter is entirely monocrystalline (see H. U. Schreiber et al., Electronic Letters 1989, Vol. 25, pp. 185–186).
Thus, in accordance with H. U. Schreiber et al., loc. cit., a so-called double mesa transistor is described, for the production of which firstly the n−-doped collector, the SiGe base, an n−-doped epitaxial emitter and an n+-doped monocrystalline emitter cap are applied on a bare Si wafer in a single epitaxy step. Afterward, the applied epitaxial layers are patterned and suitably contact-connected by means of a metallization. In comparison with the DPSA transistor, the double mesa transistor has significantly larger lateral dimensions that limit the circuit performance of this transistor structure. Thus, by way of example, in this transistor structure, the lateral, effective emitter width must always be larger than the contact hole that makes contact with the emitter.
Equally, in accordance with U.S. Pat. No. 6,177,717 B1 a single-poly (SP) transistor is described, in which the n+-doped emitter region is deposited onto the SiGe base in monocrystalline fashion in a CVD reactor. Such SP transistors also have significant disadvantages in comparison with the DPSA transistor structure. By way of example, the additional p+-type polysilicon deposition (thickness approximately 100–200 nm) is absent, this deposition being carried out in the case of the DPSA transistor for the purpose of reducing the base contact resistance. Therefore, although the SP transistor has a more planar topology in the emitter window, it also requires a p+-type implantation into the monocrystalline SiGe base terminal zone after the SiGe base deposition in order to improve the base bulk resistance. Said p+-type implantation produces point defects which, during the subsequent process steps, diffuse into the nearby active base, where they lead to a significant widening of the vertical base profile and thus to a significant reduction of the limiting frequency. In this planar transistor structure, the n+-type emitter deposited in monocrystalline fashion (in comparison with the n+-type poly/mono emitter) was introduced in order to improve the low-frequency noise.
It is an object of the invention to specify an improved method for the production of a bipolar transistor, in which case the emitter resistance can be kept as low as possible.
This object is achieved by means of a method of a bipolar transistor according to claim 1.
The present invention provides a production method for a bipolar transistor in which both the poly/mono Si boundary layer and the natural oxide film contained therein are no longer present, so that it is possible to produce transistors with the smallest possible emitter resistance.
The subclaims relate to preferred developments.
In accordance with one preferred development, carbon is incorporated into the emitter layer. A later outdiffusion of the base layer can thus be prevented.
In accordance with a further preferred development, the heat treatment step is a rapid annealing step, preferably a lamp annealing step.
In accordance with a further preferred development, a second insulation region is provided between the collector region and the base terminal region, and is opened by means of a wet-chemical etching in the window before the base region is formed selectively in the emitter window on the collector region.
In accordance with a further preferred development, the base region is deposited over the whole area of the semiconductor substrate with a collector region embedded therein, said collector region being bare toward the top, a mask region is formed above the base region in accordance with the later emitter window, said mask region being embedded in the base terminal region and the overlying first insulation region, after which the window is formed.
In accordance with a further preferred development, the base terminal region is grown above the base region by means of selective epitaxy in a manner doped in situ.
In accordance with a further preferred development, the mask region has an oxide layer and an overlying nitride layer, the nitride layer is removed during the formation of the window, the first sidewall spacer is formed in the window on the oxide layer, and then the oxide layer is opened by means of a wet-chemical etching.
In accordance with a further preferred development, the base region has a lower, more highly doped first base foundation layer and an upper, more lightly doped base cap layer, above which the base terminal region is provided, the base cap layer being doped upward during the heat treatment step from the base terminal region.
In accordance with a further preferred development, the base cap layer is thinned after the formation of the mask region. This ensures reliable upward doping.
In accordance with a further preferred development, the removal of the natural oxide in the uncovered base region takes place in an epitaxy reactor by means of a heat treatment in a hydrogen atmosphere and the differential deposition of the emitter layer is subsequently carried out in situ in the epitaxy reactor.
The invention is explained in more detail below on the basis of exemplary embodiments with reference to the drawings.

Method for the production of a bipolar transistor


Provided is a solar cell in which a linear n finger electrode and a linear p finger electrode are alternately arranged on a projection plane parallel to a main surface of a substrate, and which is arranged in a predetermined arrangement direction, including an n-side bus bar electrode connected to the n finger electrode and insulated from the p finger electrode and a p-side bus bar electrode connected to the p finger electrode and insulated from the n finger electrode. The n-side bus bar electrode and the p-side bus bar electrode are provided on a same main surface side of the substrate, intersect with the n finger electrode and the p finger electrode respectively on the projection plane, and have a slope angle relative to the predetermined arrangement direction.

In a conventional solar cell module including crystalline Si solar cells, a p-type region is provided on one of a front surface or a back surface of each of the solar cells, while an n-type region is provided on the other one of the front is surface or the back surface of each of the solar cells. In such solar cell modules, a front surface electrode provided on the front surface of one solar cell is connected to a back surface electrode provided on the back surface of a different solar cell adjacent to the one solar cell with wirings (e.g., Japanese Patent Publication No. 3670834 (see claim 1, [0017], FIG. 2, and the like).
In this solar cell module, the front surface electrode of the one solar cell is connected to the back surface electrode of the different solar cell with wirings. Thus, a processing for connecting the front surface and the back surface of the respective adjacent solar cells may cause a decrease in a positional accuracy of the wirings, a damage to the solar cells, or the like.
In contrast, as a technique for avoiding a processing for connecting front surfaces and back surfaces of each of the solar cells adjacent to each other, there has been a proposed technique in which solar cells are arranged by alternately inverting the polarities of the solar cells (e.g., Japanese Patent No. 3679611 (claim 1, [0007], and FIG. 2, and the like therein)).
More specifically, assume that a p-type region is provided on the front surface of one solar cell. In this case, an n-type region is provided on the front surface of a different solar cell adjacent to the one solar cell, and the front surface electrode provided on the front surface of the one solar cell is connected to the front surface electrode provided on the front surface of the different solar cell with the wirings. Thus, the processing for connecting the front surfaces and the back surfaces of each of the solar cells adjacent to each other can be avoided.
In addition, there has also been a proposed solar cell module in which both of a p-type region and an n-type region are provided on the back surface of a solar cell so that the solar cell does not need to locate the electrodes on the front surface thereof. This makes it possible to expand an area for receiving sunlight, and to improve a conversion efficiency.
In general, as an example of the soar cell module in which both of the p-type region and the n-type region are provided on the back surface of each of the solar cell, a solar cell module having a structure shown in FIG. 13 can be provided. FIG. 13 is a diagram showing the back surface of a solar cell module according to a conventional art.
As illustrated in FIG. 13, each of the solar cell has an n electrode 630, a p electrode 640, a metal piece 673 electrically connected to the n electrode 630, and an insulating region 675. In addition, the p electrode 640 of a solar cell a is connected to the n electrode 630 of a solar cell b with a plurality of tabs 671 (tab 671a to tab 671c) (e.g., A. Schoenecker, "A industrial multi-crystalline ewt solar cell with screen printed metallization," the 14th European Photovoltaic Solar Energy Conference, Barcelona, 1997, page. 796-799).
However, in order to insulate the n electrode and the p electrode from each other, there are restrictions in shapes and arrangement of the n electrodes and the p electrodes in the above-described conventional art. Similarly, the shapes and the arrangements of the tabs used for connecting the solar cells to each other are also restricted.
Thus, in the conventional art, it has been difficult to improve the conversion efficiency by devising the shapes and the arrangements of each of the electrode, each of the tab, and the like.

Solar cell and solar cell module including the same


A system determines search hypotheses for a search query, each search hypothesis defining a search type and respectively corresponding to a resource corpus of a type that matches the search type; for each search hypothesis, generate a hypothesis search query based on the search query and the search type and submits the hypothesis search query to a search service to determine a search hypothesis score, and for each search hypothesis having a search hypothesis score meeting a search hypothesis threshold, providing search results for the search operation performed for the hypothesis search query determined for the search hypothesis; and for each search hypothesis not having a search hypothesis score meeting a search hypothesis threshold, not providing search results for the search operation performed for the hypothesis search query determined for the search hypothesis.

This specification relates to search engine query processing systems.
The Internet provides access to a wide variety of resources, for example, video files, image files, audio files, book-related resources, web pages, etc. The resources are generally hosted on servers or server systems, which are computers that provide access to video and other resources over the Internet. The resources are accessed through uniform resource identifiers (URIs) such as uniform resource locators (URLs).
A search system crawls the Internet and indexes the resources in an index (or a set of indexes) for use in searching. The search system scores resources based on their relevance to a search query and on their importance relative to other resources. The search system provides search results that link to the resources, and the search results are typically ordered according to the scores.
As described above, there are different types of corpora, such as video, image, general web pages, books, products, and the like. A search engine can search the various corpora using different search algorithms, each algorithm designed for a specific corpus. Often users will provide a clear indication of the corpus or type of information from which they need information. Such indications may be from queries that provide a clear expression of the user's informational needs, or from providing the query on a search engine property specific to the corpus. An example of the former is a query [images of Empire State Building], which includes the unigram "images" and an entity "Empire State Building." An example of the latter is a search engine interface for books to search a book corpus.
However, often users provide queries with terms that are semantically irrelevant or of little relevance to a particular search. For such queries, the corpus or corpora that may have information the user may find useful is not readily identifiable to a search engine.

Corpus specific queries for corpora from search query


A method for determining a nucleotide sequence of a nucleic acid is provided that includes contacting the nucleic acid with a series of labeled oligonucleotides for binding to the nucleic acid, wherein each labeled oligonucleotide includes a known nucleotide sequence and a molecular nanocode. The nanocode of an isolated labeled oligonucleotides that binds to the nucleic acid is then detected using SPM. Nanocodes of the present invention in certain aspects include detectable features beyond the arrangement of tags that encode information about the barcoded object, which assist in detecting the tags that encode information about the barcoded object. The detectable features include structures of a nanocode or associated with a nanocode, referred to herein as detectable feature tags, for error checking/error-correction, encryption, and data reduction/compression.

1. Field of the Invention
The invention relates generally to molecular analysis methods and more specifically to detecting molecules associated with nanocodes.
2. Background Information
The medical field, among others, is increasingly in need of techniques for identification and characterization of molecules. In particular, techniques for sequencing a DNA molecule have become more important due in part to recent medical advances utilizing genetics and gene therapy.
For a variety of reasons, it has become advantageous to know the sequence of particular DNA molecules. Methods currently exist to map the sequence of DNA, however existing methods are too cumbersome and slow to meet the current characterization and sequencing demands. One such current method includes Automated sequencing machines employing PCR amplification to make many copies of a molecule, followed by chemical (or radioactive) tagging, gel electrophoresis, and statistical computational methods to calculate the original sequence. This method is very time consuming, and not well suited for today's rapid sequencing demands. Additionally the statistical sequencing of PCR determination leaves a margin for error in characterization that is unacceptable.
For short sequences, a hybridization microarray based method is commonly used, employing biochips such as those marketed by Affymetrix, Inc. In these "DNA chips," multiple identical copies are made of detection molecules. The detection molecules consist of specific, short (<100 bases) sequences of DNA that are carefully synthesized such that their sequence is known. By detecting (typically optically) hybridization of unknown DNA to one of these detection molecules, the sequence of a short portion of the original DNA molecule can be inferred. A problem with the biochip method however, is that the detection molecules are too long to provide complete accuracy of detection.
A need exists for a device and method for sequencing polynucleotides that reduce the possibility of sequencing errors such as inconclusive readings and at faster speeds and at lower costs. Furthermore, a need exists for rapid, accurate and sensitive methods for detection, identification, and/or sequencing of biomolecules in general, such as nucleic acids and proteins.

Methods and compositions for detecting nucleic acids using scanning probe microscopy and nanocodes


An apparatus and method for sensor architecture based on bulk machining of Silicon-On-Oxide wafers and fusion bonding that provides a symmetric, nearly all-silicon, hermetically sealed MEMS device having a sensor mechanism formed in an active semiconductor layer, and opposing silicon cover plates each having active layers bonded to opposite faces of the sensor mechanism. The mechanism is structured with sensor mechanical features structurally supported by at least one mechanism anchor. The active layers of the cover plates each include interior features structured to cooperate with the sensor mechanical features and an anchor structured to cooperate with the mechanism anchor. A handle layer of each cover plate includes a pit extending there through in alignment with the cover plate anchor. An unbroken rim of dielectric material forms a seal between the cover plate anchor and the pit and exposes an external surface of the cover plate anchor.

Microelectromechanical system or "MEMS" devices are generally well-know. In the most general form, MEMS consist of mechanical microstructures, microsensors, microactuators and electronics integrated in the same environment, i.e., on a silicon chip. MEMS is an enabling technology in the field of solid-state transducers, i.e., sensors and actuators. The microfabrication technology enables fabrication of large arrays of devices, which individually perform simple tasks but in combination can accomplish complicated functions. Current applications include accelerometers, pressure, chemical and flow sensors, micro-optics, optical scanners, and fluid pumps. For example, one micromachining technique involves masking a body of silicon in a desired pattern, and then deep etching the silicon to remove unmasked portions thereof The resulting three-dimensional silicon structure functions as a miniature mechanical force sensing device, such as an accelerometer that includes a proof mass suspended by a flexure.
The current state of the art of MEMS accelerometer devices is illustrated, for example, by U.S. Pat. No. 6,294,400 and U.S. Pat. No. 6,308,569. As is generally well-known, current MEMS accelerometer devices rely on architectures which compromise "best practice" design principles in order to obtain a structure that can be fabricated within the design rules of a given architecture. However, architectures of current MEMS accelerometer and other devices limit the level of performance achievable.
Some limitations typical of prior art devices include the mechanical die-stack containing multiple different materials having different coefficients of thermal expansion, some with poor thermal conductivity. Typically, the die-stack that forms the mechanical portion of current state of the art accelerometer devices contains multiple materials. The different materials each have different coefficients of thermal expansion, which results in differential expansion between the different materials over temperature. This differential expansion causes a temperature sensitivity in the accelerometer raw output data which requires temperature compensation be performed, either within the accelerometer or at an upper system level, if high performance is desired in the device. This differential expansion also causes high residual stresses to be present in the different joined materials near the interface. These high residual stresses may appear because the joining process is accomplished at an elevated temperature. Alternatively, the high residual stresses are caused by differential expansion over the device's operating temperature range. In either case, even supposedly "elastic" materials like silicon and silicon-dioxide are visco-elastic at the micro level. Therefore, the residual stress drives dimensional instability which, over time, shows as an instability in the device output. For example, current state of the art of MEMS accelerometer devices illustrated in U.S. Pat. No. 6,294,400 and U.S. Pat. No. 6,308,569 provide an oxide layer that is in direct contact with proof mass anchors or other critical mechanical features. This oxide layer represents an unstable dimensional condition that is free to act directly on the proof mass.
Another limitation typical of prior art devices is that one or more of the multiple different materials in MEMS accelerometer devices have poor thermal conductivity. Borosilicate glass substrates, for example, are often used as the plate to which the proof mass is anchored. Borosilicate glass has very poor thermal conductivity, relative to silicon. Therefore, a relatively large mechanical distortion is generated in the borosilicate glass substrate when subjected to a thermal gradient, as occurs during a transient thermal condition. This relatively large mechanical distortion drives accelerometer errors which cannot be easily compensated due to the time dependency of the transient.
Also, many prior art devices lack symmetry. For example, a proof mass is often anchored to a single substrate plate, without provision of a mirror-image counter plate on the opposite side of the device. When mounted to a chassis at the next assembly level, the nonsymmetrical device is subject to thermal and mechanical forces and moments which produce warping or "dishing" of the mechanism. The resultant warping or dishing of the mechanism drives many accelerometer errors.
Typical state of the art MEMS accelerometer devices are not hermetically sealed at the wafer level. Rather, most MEMS devices are sealed at a higher assembly level, such as in a lead-less chip carrier (LCC). This failure to seal the device at the wafer level permits contamination to present a significant reliability issue, and an additional layer of packaging and assembly is necessary to ensure a contamination-free device.
Typical state of the art MEMS accelerometer devices do not include strain relief between the actuator and/or sensor die-stack and chassis to which it's mounted. Direct rigid joining of the die-stack to the next level of assembly results in distortion of the die-stack due to forces and moments that the chassis imparts to the die-stack.
Another limitation of typical state of the art MEMS accelerometer devices is that the die-stack structure of many MEMS accelerometer devices is not very stiff. The compliant die-stack allows forces and moments imparted by outside sources to cause errors in the accelerometer output data.
Still another limitation of typical state of the art MEMS accelerometer devices is that most current MEMS accelerometer devices devote an area of the die solely for transferring electrical signals into and out of the actuator and/or sensor. Because overall die space is often limited due to either cost or size restraints, allocation of die area solely for transferring electrical signals causes the physical accelerometer proof mass size to be compromised. The resultant smaller proof mass is a direct cause of lowered performance.
Therefore, devices and methods for overcoming these and other limitations of typical state of the art MEMS accelerometer and other devices are desirable.

High performance MEMS packaging architecture