This invention relates to hepatitis B virus (“HBV”) core antigen particles that are characterized by multiple immunogen specificities. More particularly, the invention relates to HBV core antigen particles comprising immunogens, epitopes, or other related structures, crosslinked thereto by ligands which are HBV capsid-binding peptides that selectively bind to HBV core protein. Such particles may be used as delivery systems for a diverse range of immunogenic epitopes, including the HBV capsid-binding peptides, which advantageously also inhibit and interfere with HBV viral assembly by blocking the interaction between HBV core protein and HBV surface proteins. Mixtures of different immunogens and/or capsid-binding peptide ligands may be crosslinked to the same HBV core particle. Such resulting multicomponent or multivalent HBV core particles may be advantageously used in therapeutic and prophylactic vaccines and compositions, as well as in diagnostic compositions and methods using them.

The front-line of clinical immunotherapeutic regimens includes patient immunizations against infectious pathogens and other health-threatening agents. Despite the plethora of immunization agents, inoculations may afford, at best, partial immunity, requiring frequent re-immunizations. Such is the case for various conventional monovalent or polyvalent vaccines. And even among such vaccines, the number of single agent inoculants capable of eliciting immunity against a variety of immunogens is limited. Furthermore, antigenic variation among pathogens may limit the efficacy of conventional vaccines.
Due to such obstacles, efforts have focused on methodologies for enhancing the immune system response to given immunogens. To that end, immunogenic conjugates have been produced by linking immunogens to hepatitis B virus ("HBV") core particles (also referred to as nucleocapsids or nucleocapsid shells), in efforts to enhance the immunogenicity of the linked immunogen, through the operation of T cell dependent and T cell independent determinants of HBV core antigen. See, for example, U.S. Pat. No. 4,818,527 and R. Ulrich et al., "Core Particles of Hepatitis B Virus as Carrier for Foreign Epitopes", Adv. Virus. Res., 50, pp. 141-82 (1998). Enhanced immunogenicity of epitopes of interest has also been approached via hybrid viral particle-forming proteins, comprising at least a portion of a naturally occurring viral particle forming protein, for example HBV surface antigen, and one or more epitopic sites of interest. See U.S. Pat. No. 5,965,140. As evident from such efforts, proteins of HBV have been used as platforms for presenting immunogens of interest to the immune system.
Hepatitis B virus is a blood-borne virus, comprising a small, partially double-stranded DNA genome, carrying four extensively overlapping open reading frames, consisting of an inner nucleocapsid, comprising the HBV core protein ("HBcAg"), viral polymerase and viral DNA, surrounded by a membranous envelope containing HBV surface antigens ("HBsAg"). The viral envelope contains three different, but related surface antigen proteins, long (L), medium (M) and short (S), which share a common carboxy terminal region but have different amino termini, arising from variable use of initiation triplets at different points within a continuous open reading frame.
The long polypeptide (L polypeptide) consists of pre-S1, pre-S2 and S regions. It is the product of the entire reading frame and comprises the pre-S1 domain of 108 amino acids (or 199, depending on the virus subtype) at its amino terminus, followed by the pre-S2 domain of 55 amino acids, and the short polypeptide (S polypeptide) region of 226 amino acids. The medium-length polypeptide (M polypeptide) has the pre-S2 domain at its amino terminus followed by the S region, whereas the S polypeptide, which is the most abundant form, consists of only the S region. The pre-S regions are believed to play an important role in both viral assembly and attachment to the host cell. The S form is more abundant than the M and L forms of HBsAg in the virus, and occurs in both glycosylated and nonglycosylated forms [V. Bruss and D. Ganem, "The Role of Envelope Protein in Hepatitis B Virus Assembly", Proc. Natl. Acad. Sci. USA, 88, pp. 1059-63 (1991); V. Bruss et al., "Post-translational Alteration in Transmembrane Topology of Hepatitis B Virus Large Envelope Protein", EMBO J., 13, pp. 2273-79 (1994); A. R. Neurath et al., "Identification and Chemical Synthesis of a Host Cell Receptor Binding Site on Hepatitis B Virus", Cell, 46, pp. 429-36 (1986); K. Ueda et al., "Three Envelope Proteins of Hepatitis B Virus: Large S, Middle S and Major S Proteins Needed for the Formation of Dane Particles", J. Virol., 65, pp. 3521-29 (1991)]. Specific interactions between the outer surface of the core and the inner surface of the envelope are likely to guide correct assembly of the virus and stabilize the resulting particle
HBV core protein can be expressed efficiently in E. coli [M. Pasek et al., "Hepatitis B Virus Genes and Their Expression in E. coli", Nature, 282, pp. 575-79 (1979)], where it assembles into icosahedral shells of two sizes containing either 180 (T=3) or 240 (T=4) subunits [R. A. Crowther et al., "Three-Dimensional Structure of Hepatitis B Virus Core Particles Determined by Electron Microscopy", Cell, 77, pp. 943-50 (1994)]. The subunits are clustered as dimers and each dimer forms a spike which protrudes on the surface of the shell. Using electron cryomicroscopy and image processing, a map of the T=4 shell was recently made at 7.4 Å resolution from images of more than 6000 individual particles [B. Böttcher et al., "Determination of the Fold of the Core Protein of Hepatitis B Virus by Electron Cryomicroscopy", Nature, 386, pp. 88-91 (1997)]. This revealed the fold of the polypeptide chain, which was largely α-helical and quite unlike previously solved viral capsids. Each dimer spike was formed by a pair of long α-helical hairpins, one from each monomer in the dimer [Böttcher et al. (1997); J. F. Conway et al., "Visualization of a 4-Helix Bundle in the Hepatitis B Virus Capsid by Cryo-electron Microscopy", Nature, 386, pp. 91-94 (1997)]. A numbering scheme which superimposed the amino acid sequence on the fold [Böttcher et al. (1997)] placed the major immunodominant region of the HBV core protein around amino acids 78-82 [J. Salfeld et al., "Antigenic Determinants and Functional Domains in Core Antigen and E Antigen from Hepatitis B Virus", J. Virol, 63, pp. 798-808 (1989); M. Sällberg et al., "Characterisation of a Linear Binding Site for a Monoclonal Antibody to Hepatitis B Core Antigen", J. Med. Virol., 33, pp. 248-52 (1991)], at the tip of the spike.
Agents which inhibit HBV viral assembly include those that bind to the core antigen of HBV, thereby blocking the interaction between HBV core proteins and HBV surface proteins. Some such HBV capsid-binding peptides are described in PCT patent application WO98/18818 and in M. R. Dyson and K. Murray, "Selection of Peptide Inhibitors of Interactions Involved in Complex Protein Assemblies: Association of the Core and Surface Antigens of Hepatitis B Virus", Proc. Natl. Acad. Sci. USA, 92, pp. 2194-98 (1995).
As will be apparent from the disclosure to follow, HBV capsid-binding peptides may be advantageously used as ligands for constructing HBV core antigen particles characterized by the ability to elicit enhanced immune responses to single or multiple immunogens.

HBV core antigen particles with multiple immunogenic components attached via peptide ligands


A high concentration n-type semiconductor region (21) having a width (W) and a distance (D) of constant ranges is selectively formed to be overlapped with or adjacent to a buffer layer (2). When a thickness (L) of an n-type semiconductor layer (3) is 50 .mu.m and the distance (D) is 3 .mu.m, for example, the width (W) is set in the range of 3 .mu.m to 7 .mu.m. In this case, a saturation voltage (V.sub.CE (sat)) and a fall time (t.sub.f) are improved best as compared with a conventional device having no high concentration n-type semiconductor region (21). Thus, the saturation voltage (V.sub.CE (sat)) and the fall time (t.sub.f) are compatibly reduced.

1. Field of the Invention
The present invention relates to a semiconductor device having a bipolar structure, and more particularly, it relates to an improvement for compatibly reducing a saturation voltage and a fall time.
2. Description of the Background Art
Generally known is a semiconductor device comprising a semiconductor body, a pair of main electrodes which are connected to a pair of major surfaces of the semiconductor body, and a bipolar structure, formed in the semiconductor body, consisting of p-type and n-type semiconductor layers which are alternately stacked in three layers along the major surfaces. An IGBT, an EST (emitter switched thyristor), an MCT (MOS controlled thyristor), an SIT and a GTO are typical examples thereof.
FIG. 36 is a front sectional view showing the structure of a conventional n-channel IGBT. In a general IGBT, a number of IGBT elements (hereinafter referred to as unit cells) are connected in parallel with each other. FIG. 36 is a sectional view showing a single unit cell. In this IGBT 151, an n-type buffer layer 2 and an n-type semiconductor layer 3 which is exposed on an upper major surface of a semiconductor body 12 are successively stacked on an upper major surface of a p-type semiconductor layer 1 which is exposed on a lower major surface of the semiconductor body 12. When the rated voltage is 600 V, the n-type semiconductor layer 3 has an n-type impurity concentration of about 2.times.10.sup.14 cm.sup.-3, while the buffer layer 2 is set at an n-type impurity concentration of about 1.times.10.sup.17 cm.sup.-3, which is higher than that of the n-type semiconductor layer 3.
Further, a p-type base layer 4 is selectively formed on an upper major surface portion of the n-type semiconductor layer 3. A pnp bipolar structure is formed by the p-type semiconductor layer 1, the n-type semiconductor layers 2 and 3 and the p-type base layer 4. Further, an n-type emitter region 5 is selectively formed on an upper major surface portion of the p-type base layer 4. On a channel region 6 which is an upper major surface portion of the p-type base layer 4 held by the n-type semiconductor layer 3 and the n-type emitter region 5, a gate electrode 8 is provided to be opposed thereto through a gate insulating film 7.
In addition, an emitter electrode 9 which is a first main electrode is formed on the upper major surface of the semiconductor body 12, to be electrically connected to both of the p-type base layer 4 and the n-type emitter region 5. On the other hand, a collector electrode 10 which is a second main electrode is electrically connected to the lower major surface of the semiconductor body 12, i.e., that of the p-type semiconductor layer 1.
An operation of this conventional device 151 is now described. First, a prescribed collector voltage V.sub.CE is applied across the emitter electrode 9 and the collector electrode 10. A gate voltage V.sub.GE exceeding a threshold value which is specific to the device is applied across the emitter electrode 9 and the gate electrode 8 at this time, whereby the channel region 6 of the p-type base layer 4 which is in proximity to the gate electrode 8 is reversed to an n-type, and an n-type channel is formed in the channel region 6.
Through this channel, electrons serving as carriers are injected from the emitter electrode 9 into the n-type semiconductor layer 3. The p-type semiconductor layer 1 and the n-type semiconductor layer 3 are forward-biased by the injected electrons, whereby holes serving as carriers are injected from the p-type semiconductor layer 1 into the n-type semiconductor layer 3. Consequently, the resistance of the n-type semiconductor layer 3 is remarkably reduced, and a main current flowing from the collector electrode 10 to the emitter electrode 9, i.e., a collector current I.sub.C, reaches a high value. Namely, the device enters a conducting state (is turned on). Thus, the resistance of the n-type semiconductor layer 3 is reduced by the injection of the holes from the p-type semiconductor layer 1 in the IGBT.
The resistance across the emitter electrode 9 and the collector electrode 10 in the ON state of the device is called ON-state resistance. In general, such ON-state resistance is evaluated through the collector voltage V.sub.CE (called a saturation collector voltage V.sub.CE (sat)) which appears when the collector current I.sub.C is at a rated current value. In general, the rated current of the IGBT is typically about 50 to 200 A/cm.sup.2. The saturation voltage V.sub.CE (sat), which causes power loss at an ON time, is preferably minimized.
Under a state of applying the gate voltage V.sub.GE of a constant magnitude, limitation of a constant amount corresponding to the gate voltage V.sub.GE is added to the flow rate of electrons flowing in the channel region 6 when the collector voltage V.sub.CE is increased. Therefore, the collector current I.sub.C flowing through the device is saturated at a constant value (called a saturation collector current I.sub.C (sat)) corresponding to the gate voltage V.sub.GE.
The buffer layer 2 which is in contact with the p-type semiconductor layer 1 is adapted to control the amount of the holes injected from the p-type semiconductor layer 1. Since the buffer layer 2 has a high n-type impurity concentration, the holes injected from the p-type semiconductor layer 1 readily recombine with the electrons of the buffer layer 2. Thus, the saturation collector current I.sub.C (sat) is reduced due to the provision of the buffer layer 2. As the saturation collector current I.sub.C (sat) is reduced, the device is hardly broken upon short-circuiting of a load. On the other hand, the ON-state resistance is increased due to the provision of the buffer layer 2. Thus, the saturation collector current I.sub.C (sat) and the ON-state resistance are comprehensively optimized by properly adjusting the thickness and the impurity concentration of the buffer layer 2.
When the gate voltage V.sub.GE is reduced to zero or a reverse bias (negative value) from the value exceeding the threshold value while applying the collector voltage V.sub.CE of the prescribed magnitude, the channel region 6 which has been reversed to the n-type returns to the original p-type. Consequently, the injection of the electrons from the emitter electrode 9 is stopped. Thus, the injection of the holes from the p-type semiconductor layer 1 is also stopped.
Thereafter the electrons and the holes which have been stored in the n-type semiconductor layer 3 (and the buffer layer 2) are collected in the collector electrode 10 and the emitter electrode 9 respectively, or reduced by recombining with each other, to finally disappear. At this time, the holes are reduced at a lower rate than the electrons, whereby a hole current passing into the emitter electrode 9 mainly causes the so-called tail current which appears in the collector current I.sub.C. A time required for attenuation of the collector current I.sub.C (generally defined by a time required for attenuating the collector current I.sub.C from 90% of I.sub.C in an ON-state to 10%) is called a fall time t.sub.f. The fall time t.sub.f is preferably minimized, as a matter of course.
The buffer layer 2 is also adapted to prevent a depletion layer extending from the p-type base layer 4 from reaching the p-type semiconductor layer 1 and allowing conduction between the p-type semiconductor layer 1 and the p-type base layer 4 (called "punch-through") when the collector voltage V.sub.CE is applied to the IGBT 151 up to a value which is close to a breakdown voltage, thereby improving the withstand voltage of the device.
In a general IGBT including the device 151 shown in FIG. 36, a trade-off relation is present between a requirement for reduction of the saturation voltage V.sub.CE (sat) and that for reduction of the fall time t.sub.f. In recent years, therefore, attempts for compatibly improving both of these requirements have been energetically advanced. Such an improvement has been mainly made by refining a MOS structure which is formed along the upper major surface of the semiconductor body 12 in the IGBT 151, i.e., the structure formed by the n-type semiconductor layer 3, the p-type base layer 4 and the n-type emitter region 5.
The inventor has presented an IGBT having a trench gate shown in a front sectional view of FIG. 37, in a meeting of a scientific society held in 1994. This IGBT 152 is provided with a groove 31 which opens on an upper major surface of a semiconductor body 12 and passes through a p-type base layer 4 and an n-type emitter region 5, to reach an n-type semiconductor layer 3. Further, a gate electrode 33 consisting of polysilicon is buried in the groove 31, through a gate insulating film 32. In this device 152, a region 35 of the p-type base layer 4 which is opposed to the gate electrode 33 serves as a channel region.
In the device 152, refinement of the MOS structure has been remarkably advanced due to the trench gate type of the MOS structure. Consequently, improvement of the saturation voltage V.sub.CE (sat) and the fall time t.sub.f has been advanced. Thus, compatible improvement of the saturation voltage V.sub.CE (sat) and the fall time t.sub.f in the IGBT has been mainly promoted by improving the MOS structure. However, the improvement of the MOS structure is regarded as reaching the limit by the employment of the trench gate structure.
On the other hand, the inventor has disclosed an IGBT which can compatibly improve the saturation voltage V.sub.CE (sat) and SOA (Safe Operation Area) by improving a portion different from the MOS structure as shown in a front sectional view of FIG. 38, in Japanese Patent Laying-Open No. 6-204481 (1994). In this device 153, a high concentration n-type semiconductor region 21 having a high n-type impurity concentration of about 1.times.10.sup.18 to 1.times.10.sup.21 cm.sup.-3 is selectively formed in a buffer layer 2. The n-type impurity concentration of the buffer layer 2 is set at a lower value of about 5.times.10.sup.14 to 1.times.10.sup.17 cm.sup.-3.
In this device 153, it is expected that not only the saturation voltage V.sub.CE (sat) and SOA are compatibly improved as compared with a device having the same MOS structure, but the saturation voltage V.sub.CE (sat) and the fall time t.sub.f can also be compatibly improved. Namely, it is expected that the device 153 achieves a breakthrough about the limit in improvement of the MOS structure, and prepares a way for further improving the saturation voltage V.sub.CE (sat) and the fall time t.sub.f. In the device 153, however, the shape of the high concentration n-type semiconductor region 21 is not optimized in view of compatible improvement of the saturation compatible improvement of the saturation voltage V.sub.CE (sat) and the fall time t.sub.f, and hence latent ability of the device 153 has not been sufficiently brought out.

Semiconductor device including a bipolar structure


An electronic device having multiple antennas and capable of operating in a wireless communication system, where interference between the multiple antennas is minimized using a detuning circuit activated by one or more antennas and resulting in detuning of at least one of the antennas. Activation of the detuning circuit can be accomplished by positioning an antenna to complete the detuning circuit and thereby activate the detuning circuit.

The present invention relates to an electronic device having multiple antennas and, more particularly to an electronic device for reducing interference between the multiple antennas by engaging a decoupling electronic circuit for the electronic device operable in a wireless communication system.
A communication system is operable to communicate information between a transmitting station, also referred to as a calling party, and a receiving station, also referred to as a receiving or called party, by way of a communication network. Operation of a wireless communication system transfers information between the transmitting and receiving stations via one or more base stations. These transmitting and receiving stations are also known as wireless communication devices, cell phones or mobile phones, Personal Digital Assistants (PDA""s), or portable computers. As the capability and sophistication of the wireless communication system has increased, the demand for mobile communication devices having at least two antennas has proliferated. Previous mobile communication devices having multiple antennas utilize an electrical or mechanical switch to provide an RF signal to one of the multiple antennas, thereby providing an active antenna. However, the non-active antennas on the mobile communication device can degrade the performance of the active antenna. Among the concerns for locating multiple antennas within a limited space of a mobile communication device is the interference, or coupling between the antennas. Typical solutions include greater separation between the antennas to minimize the interference. Consequently, the relatively small dimensions of the mobile communication device restricts the available separation of the antennas. It would be useful to provide decoupling, also called detuning, or changing resonant frequency, of multiple antennas of a mobile communication device, while achieving sufficient gain and impedance matching of the antennas.
The present invention encompasses an electronic device having multiple antennas detuned to minimize interference and operable in a wireless communication system, where the electronic device can comprise a mobile station, a personal digital assistant (PDA) or a portable computer. The apparatus of the present invention comprises an internal antenna, an exterior antenna, and a detuning circuit to alter resonant frequency of the inactive antenna and thereby minimize interference between the antennas. Detuning circuitry may cooperate with either the interior antenna or the exterior antenna to minimize interference during operation of the electronic device. In addition, activation of the detuning circuit can be by achieved by positioning the exterior antenna to cooperate with the detuning circuit.
A more complete appreciation of all the advantages and scope of the present invention can be obtained from the accompanying drawings, the following detailed description of the invention and the appended claims.

Decoupling between plural antennas for wireless communication device


A fluid pump includes a case including a pump chamber, a reserve tank for storing spare liquid and located in the case but outside the pump chamber and formed so that a space independent of the pump chamber is defined by the reserve tank, a fluid path forming member arranged inside the reserve tank and including a discharge path communicating between a discharge port and the pump chamber, and a communication hole which is formed in a side of the fluid path forming member so as to assume such a position that the communication hole faces an inside of the reserve tank so that the hole communicates between the discharge path and the inside of the reserve tank, the communication hole being sized so that air in the pump chamber is allowed to flow through the hole into the reserve tank.

1. Field of the Invention
The present invention relates to a fluid pump suitable for a cooling system that cools heat generating parts.
2. Description of the Related Art
Conventionally many existing fluid pumps for handling a liquid are provided with a motor having a rotor to which an impeller is integrally fixed for rotation together with the rotor, so that the pump vanes of the impeller serve to suction the liquid into a pump chamber via a suction port, and to discharge the liquid out of the pump chamber via a discharge port.
Such pumps can be incorporated in a cooling system that cools heat-generating parts, including a heat-receiving section that absorbs the heat of the heat-generating parts via a liquid refrigerant and a heat-dissipating section that dissipates the heat transferred to the liquid refrigerant, as a means of circulating the liquid refrigerant through the heat-receiving section and the heat-dissipating section. When the liquid refrigerant is circulated through a closed circuit, the cooling system further includes a reserve tank for storing reserve liquid refrigerant to compensate for a decrease in the liquid refrigerant due to evaporation, in addition to the heat-receiving section, heat-dissipating section and fluid pump, as disclosed in Japanese Published Unexamined Patent Application No. 2003-172286, Japanese Published Unexamined Patent Application No. 2003-161284, and Japanese Published Unexamined Patent Application No. 2003-124671 for example. A purpose of employing the reserve tank is to prevent degradation of the cooling performance, since a decrease in the amount of the liquid refrigerant by evaporation results in a lower cooling capacity.
In such a conventional cooling system including a fluid pump, however, the separately installed reserve tank incurs various drawbacks such as an increase in the number of parts as well as in over-all dimensions of the system, and also in the number of connecting points.

Fluid pump, cooling system and electrical appliance


A method and a system for communication between devices in proximity, a network side device and a User Equipment (UE) are disclosed. The method includes that: a network side device determines whether UEs meet a direct Device to Device (D2D) communication condition; when the network side device determines that the UEs meet the direct D2D communication condition, the network side device informs the UEs of the result of the determination, and configures resources for direct D2D communication for the UEs according to requirements of the UEs; and when the network side device determines that the UEs do not meet the direct D2D communication condition, the network side device configures resources for architecture communication for the UEs according to the requirements of the UEs. The disclosure can implement D2D communication between devices in proximity, reduce network load and relieve the dependence of the D2D communication on a network.

Machine to Machine (M2M) refers to all technologies and means for establishing a connection between machines. The concept of M2M has been proposed in the 1990s but is only remained at a theoretical stage. Networking of machines implemented by using mobile communication technologies becomes possible due to the development of mobile communication technologies after 2000. An M2M service has emerged on the market around 2002, and has become a focus of attention of numerous communication equipment suppliers and telecom operators after the rapid development of the subsequent years. At present, the competition in telecommunication market is increasingly fierce, accompanied with the continuous reduction in telecom price and the profit margin of operators. Moreover, the human-based communication market is getting saturated. In this case, the M2M means a brand-new development opportunity for operators.
Researches on application scenarios of M2M communication show that the implementation of M2M communication on a mobile network has a potential market prospect. However, as an M2M service has many new requirements on a system, to enhance the competitiveness of mobile networks in this aspect, it is necessary to optimize existing mobile networks to provide more effective support for M2M communication.
Mainly designed for Human to Human (H2H) communication, existing mobile architecture networks are not optimal for M2M communication or human to machine communication. Besides, how to provide an M2M communication service at a low cost is also a key to success in deployment of M2M communication.
Based on the above situation, it is necessary to put forward a solution to the support of mobile networks to M2M communication, by using which the existing networks may be reused best and the influence caused by a great amount of M2M communication on networks as well as the complexity of operation and maintenance may be reduced.
To use mobile network resources effectively, the 3rd Generation Partnership Project (3GPP) has proposed Machine Type Communication (MTC), that is, services for M2M and machine to human communications, which is far beyond conventional H2H communication in service range and is greatly difference from existing H2H communication modes in access control, charging, security, Quality of Service (QoS), service mode and the like.
Device to Device (D2D) communication refers to direct communication between devices being in proximity to each other, such as Bluetooth devices. On account of lack of network management and control, an unlicensed spectrum, such as 2.4 GHz, is generally used in D2D communication. With the rapid popularization of smart phones, many new applications arise, such as position-based applications and social applications. In a mobile architecture network, the communication between UEs must be implemented by a network, even for two devices being in proximity to each other, as shown in FIG. 1. This is because a network operator needs to manage and control a licensed spectrum by using which communication is implemented between two communication parties through a network which is indispensable for the communication for the sake of the resource scheduling for communication activities, the charging for the communication activities and the management on the communication activities. At present, the idea of direct communication between devices being in proximity to each other, as shown in FIG. 2, has been put forward to reduce network load. The direct communication between MTC devices is also needed in MTC, for example, in a capillary network, the communication between MTC devices and between an MTC device and a gateway are required. Furthermore, the 3GPP is also carrying on research on D2D communication.
During researching and experiencing existing technologies, the present inventor has found the following problems in the existing technologies: who should make a decision on whether to adopt D2D communication; how to control the D2D communication by using a licensed spectrum by a network; how to deal with the situation that devices to be communication are out of the coverage of a proximity area where direct D2D communication is available; and the like. No solution to the above problems has been proposed.

Method and system for communication between devices in proximity, network side device and user equipment


A pump and stopper combination for vacuum or pressure sealing a container. The stopper has a pour opening and a one-way valve movable between an operative position to permit one-way flow of fluid into or out of the container when the pour opening is in the closed position, and an inoperative position when the pour opening is in the open position. A vacuum/pressure pump that connects to the stopper includes a drive adapted to convert rotational movement of a motor to reciprocating motion of a pump piston in a chamber, and one-way pump valves mounted in a selectable flow control member. The selectable flow control member is movable between pressure and vacuum positions to permit passage of fluid only into or out of the pump chamber. The pump also includes an indicator for indicating when a desired level of vacuum or pressure has been reached The pump may be incorporated into a container lid.

1. Field of the Invention
This invention relates to motorized pumps and stoppers which may be used for pressurizing and/or evacuating food or drink containers and, in particular, to a motorized vacuum/pressure pump which employs a piston drive mechanism to convert rotary motion of a motor to a reciprocating motion of a piston and a valve selectable to change the pump between vacuum and pressure pumping modes, and a stopper which may be switched between pour and vacuum/pressure seal positions. The pump may be incorporated into a container lid.
2. Description of Related Art
A combination vacuum/pressure pump for preserving wine and/or foods under vacuum, and pressurizing carbonated drinks and other foods, is disclosed in U.S. Pat. No. 5,031,785. This pump utilizes a hand-pumping mechanism, switchable between vacuum and pressure modes, and mates with a valve stopper, likewise switchable between vacuum and pressure modes, that is disposed in the open mouth of a food or drink container. While this combination vacuum/pressure pump is quite useful, it requires the user to open the pump head to switch between the vacuum and pressure pumping modes. A more convenient vacuum/pressure switching method would be useful. Also, it would be useful to have a vacuum/pressure pump which does not require hand-pumping operation.
The '785 patent also discloses a stopper for use with the vacuum/pressure pump, which has a valve element that may be reversed between vacuum and pressure sealing positions. However, in order to access the contents of the food or drink container, the stopper must be removed from the mouth of the container. It would be useful to provide a way to access the contents of the container without having to remove the stopper.
Another vacuum pump and stopper system employs an audible click when the system reaches a desired level of vacuum, relying on a mechanical system to generate the sound. It would be useful to have an indicator in both a vacuum and pressure system that provides a reliable indicator, not limited to a sound, to indicate when the desired level of vacuum or pressure has been achieved.
Some foods or drinks that are preferably stored at a vacuum also are provided in containers that cannot be closed with bottle stoppers, such as coffee in conventional one-pound containers. It would be desirable to have a way to automatically seal and store the contents of such containers in a vacuum.
Moreover, it is important in vacuum/pressure pump and stopper systems to utilize one-way valves that are inexpensive to manufacture, yet seal properly.

Motorized vacuum/pressure pump and stopper


A nipper-clipper assembly for lifting railroad ties and installing clip assembly springs to couple rails to a tie. The ties are disposed below the rails and extending in a lateral direction relative to the longitudinal rails. The nipper-clipper assembly includes a main beam assembly, a right side clipping assembly, a left side rail clipping assembly, a right side nipper assembly having a pad assembly, and a left side nipper assembly having a pad assembly. The nipper assemblies and the clipper assemblies are coupled to the main beam assembly. The right side pad assembly and the side pad assembly are structured to act upon the tie by contacting the lateral ends of the tie.

1. Field of the Invention
This invention relates to a railroad nipper-clipper and, more specifically, to a nipper-clipper that may adjust railroad ties laterally.
2. Background Information
A railroad track includes one or more pairs of longitudinal rails, a plurality of lateral ties, and a ballast bed. The ballast bed is made from large particulate materials, typically gravel. The ties rest on the ballast bed. The pairs of tracks are coupled to the ties. While rails have been traditionally coupled to wooden ties by spikes, modern concrete ties utilize a system of clip assemblies.
Railroad tie clip assemblies include a tie plate fixed to the tie and two springs. The tie plate extends to, or is bifurcated on, both sides of the rail, and the rail is disposed therebetween. Two springs are coupled to the tie plate, one disposed on each side of the rail. The springs have an upper U-shaped portion and two lower fingers that double back under the U-shaped portion. The spring biases the U-shaped portion towards the fingers. The fingers engage the tie plate and are horizontally slidable thereon. The springs move from an installed position where the U-shaped portion engages the rail to an uninstalled position where the U-shaped portion does not engage the rail. Thus, the U-shaped portion biases the rail against the tie plate, and, by extension against the tie.
A clipping machine, hereinafter a "clipper," is a device structured to couple the rail to the tie by moving the spring from the uninstalled position to the installed position. Clippers are known in the prior art. A typical operation for a clipper occurs on a newly laid track, or a restored track, wherein the ballast bed has been laid, the ties installed thereon, and the rails disposed between the plurality of clip assemblies on the ties. So long as the rails are aligned in the tie plates, the clipper need only to advance along the track installing clips. If, however, the ballast bed is not smooth, certain ties may be lower than adjacent ties. In this situation the ties may have to be lifted in order to align the brackets with the rails. The act of lifting a tie to be in contact with the lower side of a rail is called "nipping." The device structured to lift the tie is called a "nipper." The nipping and clipping operations must be performed at the same time. Thus, the device that combines these features is a "nipper-clipper."
Prior art nippers utilized one or more, typically two, clamps that gripped the forward and aft sides of a tie, or, extended over the forward and aft sides of the tie while lifting the tie from the underside. While the prior art nippers were effective in lifting the tie into contact with the underside of the rail, the prior art nippers could not laterally adjust the tie. That is, if the tie was laterally off center, as compared to the rails or adjacent ties, the prior art nippers had no means for laterally repositioning or adjusting the tie so that the rail would be centrally over the tie plate.
There is, therefore, a need for a nipper-clipper assembly structured to laterally adjust a tie.
There is a further need for a nipper-clipper assembly that automatically laterally adjusts a tie.
There is a further need for a mobile nipper-clipper vehicle structured to travel along a track laterally adjusting ties and installing clip assembly springs.

Laterally adjustable nipper-clipper assembly and method of operating a laterally adjustable nipper-clipper assembly


Polypeptides derived from fibronectin are presented that are neutrophil elastase-resistant and can bind to growth factors and/or enhance growth factor activity. These polypeptides are useful for enhancing wound healing in a patient.

In the US civilian population, each year, approximately 500,000 patients with burns present to emergency departments. Of 40,000 annual hospital admissions, 25,000 burn victims are admitted to specialized burn centers. Progressive extension of burns can have a devastating effect. Over the course of a few days to one week deep partial-thickness burns can become full-thickness burns, which in the short term, leads to increased tissue loss, longer healing time, excess morbidity and mortality. In the long term, increased scarring, wound contractures and poor quality of life become major issues. While the exact mechanism(s) leading to conversion of the zone of ischemia to full-blown necrosis is unclear, several processes, including oxidant and cytokine stress resulting from inflammation as well as ischemia/reperfusion, probably play a role. Therapies to improve blood flow, such as non-steroidal anti-inflammatory agents (NSAIDS) and anti-coagulants (heparin) have not shown substantial benefit in preventing burn injury progression. Hence therapy to limit burn injury progression is an unmet need. There is evidence that fibronectin (FN) is involved in many biological processes including tissue repair, embryogenesis, blood clotting, cell migration, wound repair, and cell adhesion. There are two primary forms of fibronectin. The first is an insoluble glycoprotein dimer that serves as a linker in the extracellular matrix (ECM), and the second is a soluble disulfide-linked dimer found in plasma. The ECM form of fibronectin is expressed by fibroblasts, chondrocytes, endothelial cells, macrophages and certain epithelial cells. The plasma form of fibronectin is expressed by hepatocytes. Fibronectin can serve as a general cell adhesion molecule by anchoring cells to collagen or to proteoglycan substrates. Fibronectin can also play a role in organizing cellular interactions by binding to components of the ECM and to membrane-bound fibronectin receptors on cell surfaces. Forms of fibronectin are found in vertebrates, including mammals, birds, amphibians, fish, and reptiles.
FN, a 500 kDa glycoprotein, circulates in the blood and is produced and deposited by tissue cells in the provisional extracellular matrix (ECM) during tissue formation. As a critical component of the provisional ECM, FN plays a vital role in embryogenesis, morphogenesis and wound healing but is deficient in burn patients' wounds and blood. FN is known to be degraded in burn wound fluids by the endopeptidase neutrophil elastase. See Grinnell, et al., Identification of Neutrophil Elastase as the Proteinase in Burn Wound Fluid Responsible for Degradation of Fibronectin, J Invest. Dermatology, 1994, 103(2):155-61.
Previously disclosed peptide "P12" is 14-residue peptide that is cryptic within the immunoglobulin sandwich type of β-pleated sheet of fibronectin's (FN) first type III repeat (FNIII1). Unlike FN, P12 in solution promotes mesenchymal cell growth, proliferation and migration intrinsically and synergistically with a variety of growth factors, especially platelet-derived growth factor-BB (PDGF-BB). Furthermore, P12 protects adult human dermal fibroblasts (AHDF) from cell death induced by oxidative and cytokine stress and/or nutrient withdrawal in the presence of PDGF-BB. P12 also limits burn injury progression in rat and porcine burn models and mitigates scarring in a vertical burn injury progression pig model. See, e.g., PCT/US2006/038778; U.S. Pat. No. 8,759,300; Lin, et al., Fibronectin peptides that bind PDGF-BB enhance survival of cells and tissue under stress, J Invest Dermatol. 2014 April; 134(4): 1119-1127; and Asif, et al., Blood Vessel Occlusion in Peri-burn Tissue is Secondary to Erythrocyte Aggregation and Mitigated by a Fibronectin-derived Peptide that Limits Burn Injury Progression, Wound Rep Reg (2016) 24 501-513. In particular, the fragment of fibronectin PSHISKYILRWRPK (SEQ ID NO:108), or "P12" is disclosed in both Lin, et al. and Asif, et al. as being useful for the treatment of wounds, particularly the treatment of burns.

Peptides derived from fibronectin with improved bioactivity and reduced susceptibility to neutrophil elastase degradation


A method of making low extractable coatings, varnishes, adhesives or inks comprising the steps of:                (a) providing a radiation curable composition,        (b) applying said composition onto a surface, and        (c) irradiating the surface with actinic radiation or electron beam,wherein the radiation curable composition comprises at least one amino(meth)acrylate obtained by reacting at least one primary and/or secondary amine (A) with at least one (meth)acrylated ethoxylated polyol (B) having a degree of alkoxylation of at least 4.

The present invention relates to aminoacrylates and their use for making radiation curable compositions for making low odor and/or low extractable coatings, varnishes, adhesives or inks.
Radiation curable, low viscosity inks and coatings are typically composed of mixtures of acrylated monomers and/or oligomers. However, typically monomers which are used to control viscosity of ink or coating compositions do not react completely during polymerization upon exposure to irradiation (UV or electron beam radiation) and remain as residual components in the dried printing ink or coating films and are subject to migration by absorption as well as surface contact. This migration leads to problems, particularly for printing or coating "odor" or "off-taste" sensitive packaging for package such as containers for food and for such applications which require negligible amounts of extractables from cured printing inks or coatings such as pharmaceutical packaging.
It is known to add to radiation curable compositions comprising monomers or oligomers, amines or acrylated amines (aminoacrylates) that enhance the curing of the monomers and oligomers. EP 280222 teaches the use of addition products of a primary mono-amine with (meth)acrylic esters of polyols to enhance the curing rate, even in the presence of oxygen. U.S. Pat. No. 5,482,649 discloses that the modification of acrylated ethoxylated polyols with amines at low level leads to low viscosity aminoacrylates with high reactivities during radiation curing. EP1147098 discloses a (meth)acrylate compound which is the reaction product of a cyclic secondary amine and a poly(meth)acrylate having at least three (meth)acrylate groups, which is useful for radiation curable coating or ink composition having low viscosity, low volatility, and high cure rate under radiation. EP1147098 more specifically discloses the reaction products of ethoxylated trimethylolpropane triacrylate and propoxylated glycerol triacrylate with morpholine.
However when used in compositions for making coatings, varnishes, adhesives and inks, more particularly for food-packaging applications, most of these known aminoacrylates tend to migrate. There is still a need for radiation curable ink, varnish, adhesive and coating compositions having insignificant odor, off-taste and/or extractable components after curing.
The present invention solves these problems.

Method of making low extractable coatings using radiation curable compositions containing aminoacrylates


An anaerobic digestion process for the treatment of domestic wastewater sludge that requires less space and funding to construct. Sludge to be treated is combined with recycled anaerobic digester sludge to form a blended sludge. The recycled anaerobic digester sludge provides a source of microorganisms necessary to initiate the breakdown of organic matter in the sludge to be treated. The sludge is then concentrated to increase total solids content to about 10-20%. Excess liquid is removed from the concentrated sludge. The concentrated sludge is then digested in an anaerobic reactor system such as a plug-flow reactor. Some benefits of the system's reduced volume, as a result of concentration of the sludge, include elimination of the necessity of substantially continuous stirring and the new possibilities for the types of construction to be used for the reactor. In addition to the reduced cost of the process itself, the process creates biogas that can be used to offset energy requirements for the process.

There is considerable interest in the treatment of wastewater sludge. Anaerobic digestion of municipal wastewater sludge typically requires the use of large holding tanks sized to accommodate enough sludge to account for a 20-day hydraulic retention time. In addition to these tanks, equipment is used to constantly stir the contents. This new process requires a much smaller tank and no stirring equipment, and yet does not sacrifice performance as compared to standard anaerobic digestion processes. Resulting equipment costs and capital costs are reduced considerably. Land requirements are similarly reduced.
Anaerobic digestion is a microbiological process in which organic materials are broken down by the action of microorganisms in the absence of oxygen. The anaerobic microorganisms reduce the quantity of organic matter present in the biologically activated sludge thereby generating bio-gas having a relatively high methane gas content. The stabilized sludge is typically removed from a digestion tank for dewatering and disposal. The methane gas can be burned off or recovered to supply energy to heat the digesters as well as supply energy for use elsewhere in the treatment facility. There exists a great need to maximize the effectiveness and costs of the anaerobic digestion to allow municipalities and other treatment facilities to operate efficiently and reduce the burdens on space. This invention serves these important needs and others as will become apparent.

Anaerobic digestion process for low-solid waste


A portable heat conducting apparatus which includes a gas catalyst combustion device having an air sucking ejector. The apparatus further includes a gas jetting nozzle connected to a gas cylinder via a gas control valve, a combustion catalyst, an ignition device, heat drive pump, and check valve. The heat drive pump includes a heating portion having a liquid heating recess. A check valve is disposed in each of the discharge and suction sides of the apparatus. The gas catalyst combustion device has a combustion chamber which accommodates the combustion catalyst, includes the heat drive pump's heating portion, and is made of excellent heat conducting material. An opening portion in the recess formed in the heat drive pump's heating portion is located to face upwards with respect to gravity, and the heat conducting apparatus further includes an operating-liquid circulating closed-circuit.

1. Field of the Invention
The present invention relates to an application of "HEAT CONDUCTING APPARATUS" disclosed in Japanese Patent Application No. 59-153442 and "HEAT DRIVE PUMP" disclosed in Japanese Patent Application No. 61-144783 by the applicant of the present invention. More particularly, the present invention relates to a small-size and light weight heat conducting apparatus which can be utilized in a portable heating unit or a heating suit for use outdoors, the heat conducting apparatus having an energy source so that it can be utilized in highlands, on the sea, and cold districts, and the like, to which power or gas cannot be easily supplied.
2. Description of Related Art
Hitherto, gas stoves or body warmers, the energy source of each of which is petroleum type fuel, have been widely used as outdoor portable heaters. However, the stove is dangerous because it is an open fire system. Furthermore, since the stove scatters the major portion of its energy into the air, the energy is not used efficiently. The body warmer encounters a problem that it can heat only a portion. Accordingly, a heating suit and a mat each having a battery and an electric heat structure have been considered. However, the realized energy density per unit weight of the battery has not been satisfactory at present; and therefore, they cannot supply sufficient energy to the suit for a satisfactorily long time. If the structure is arranged in such a manner that it is able to supply sufficiently large energy for a satisfactorily long time, the weight of the structure becomes too heavy, according to the present technological level, causing a problem with carrying the device.


Methods, apparatus, systems and articles of manufacture are disclosed to convert a machine to a virtual machine. An example method disclosed herein includes moving, via a processor, an original operating system to create free space on a storage device, installing a hypervisor in the free space on the storage device, generating a virtual machine in the free space on the storage device, and loading the hypervisor and the virtual machine, the virtual machine to execute the original operating system.

Virtualizing computing systems provides benefits such as the ability to execute multiple computing systems on a single hardware computing system, replicating computing systems, moving computing systems among multiple hardware computing systems, and so forth. Typically, virtualization systems include a hypervisor that creates and runs virtual machines. Some virtualization systems utilize a hypervisor that executes in (e.g., is hosted by) an operating system (e.g., Microsoft® Windows® operating system). Other virtualization systems utilize a hypervisor that executes directly on the hardware (sometimes referred to herein as a "native hypervisor" or a "bare-metal hypervisor"). Users (e.g., system administrators, information technology (IT) administrators, system operators, etc.) may elect to utilize a hosted hypervisor when available hardware resources (e.g., a computing system that does not have important data on it) cannot be dedicated to a new native hypervisor because a hosted hypervisor can be installed without overwriting the existing operating system and/or data.

Methods and apparatus to convert a machine to a virtual machine


A multiple step coating process for coating a construction element having side portions, one of which is an unmasked transport side portion, and whereby at least three sides portions are coated, comprising:                (A) advancing the element past a vacuum coater first coating station on the unmasked transport side wherein a surface layer is applied onto one or more of the non transport side portions of the element; and        (B) subsequently advancing said coated element into further vacuum coater coating stations wherein a surface layer to the unmasked transport side of (A) and/or one or more of the remaining sides of the element.

Although PVC construction elements such as profiles are the choice of many professional and consumers because of various reasons, many people still perceive PVC construction elements as having a "plastic" look.
On the one hand, the appearances of profiles have been addressed by coating construction elements such as profile members which can be provided with a coating e.g. by spray coating or by the application of a foil provided with a coating. Spray coating has the advantage that a relatively thick coating layer of e.g. a thermosetting resin can be applied such that this layer can comprise a polymeric powder to obtain the desired grained surface structure. However, a disadvantage of providing a coating by a spray coating method on a profile member is that those surfaces of the profile member which are not to be colored have to be masked first. Then those surfaces which are to be colored, are degreased to obtain good adhesion of the coating. Then the coating is applied by means of a spray unit in two or three successive layers, to the profile member, finally followed by for example air-drying of the coating or drying of the construction elements in a heated oven. Masking, to prevent overspray on profile surfaces, which are not intended to be painted, degreasing and spraying of the construction elements are carried out manually. The mask may be in the form of a fabric and/or film layer which is pressed and/or held against the surface of the profile on which no coating is desired. The mask may be in contact with the profile only during the vacuum coating or, in other embodiments of the invention, the mask is in contact with the profile through both the coating and curing steps and/or the mask is in contact with the profile during the entire time the profile is within any of the curing and/or coating device.
The drawback of this method is that it is very labor-intensive, time-consuming and creates high amounts of waste due to masking tape or other products used to cover non-painted surfaces. This method consequently results in low productivity and is very expensive. Owing to the wide variety of construction elements such as profile members and to their dimensions on the one hand, and to the difficulty of masking different parts of them on the other hand, automation of this method cannot be achieved in an efficient manner.
On the other hand, in coating applications requiring a high quality coating finish it is generally desirable to completely and evenly coat an object to be coated with a minimum expenditure of coating. This is desirable for several reasons. First, coatings for the above mentioned profile are often expensive. Therefore, reducing coating consumption offers the immediate benefit of reduced coating cost. Second, coating material which is not deposited upon the object to be coated can be lost to the environment and this loss generally is an environmentally undesirable form of waste. Therefore, reducing the quantity of coating lost to the environment in a coating process reduces the costs of disposing of the lost coating material and reduces emissions of coating solvents. Vacuum coating processes can be used, but such processes are limited to construction elements such as profiles having leading and trailing edges. Profiles have inside surfaces which form depressed or recessed areas of the profile between the front and rear edges of the profile. These recessed areas form leading and trailing edges which extend transverse to the direction of movement of the profile through the coating apparatus.
From the above, it is made clear that an object of the present invention is to provide a reduced "non plastic look" construction, in particular profiles such as window profiles, which do not have the drawbacks of conventional PVC construction elements and suffer from the drawbacks of the processing set out above.
The present invention is directed to solving this myriad of sometimes interrelated problems in a coating process which incorporates a number of features which, in combination, produces an extremely high quality coating and even an unexpected finish on difficult articles to be coated.
A further object of the present invention is to provide a new economically process which provides for a variety of aesthetic finishes, including a range of aesthetics and textured thereby resulting in said reduced plastic look finish.
In accordance with the present invention, it has now been found that the above-described specifications can be fulfilled by coated construction elements. The present invention provides for cost efficient and effective environment friendly process as well as desired specifications and properties of the products obtained thereof.
The object is achieved by method for providing a fully colored construction element such as a profile with a coating, the method comprising a multiple step coating process for coating a substrate construction element having side portions, whereby at least three sides portions are coated, characterized in that the process comprises the steps of A) advancing the element past a first coating station on its transport side for applying a surface layer onto one or more of the non transport side portions of the element and B) subsequently advancing said element into further coating stations for applying a surface layer to the transport side of A) or/and one or more of the remaining side portion of said element.
A second aspect of the present invention provides for a coated profile that matches standard todays coated PVC profiles in terms of finish, color fastness/long term weathering performance; gloss and long term gloss retention performance; impact performance and UV aged impact performance and surface hardness/scratch resistance;
Generally, it is known to spray paint or coat construction elements by an apparatus having a conveyor which moves parts to and through some form of spraying booth where one or more nozzles coat the construction elements with a coating composition. These apparatus or systems are limited by the amount of volatile organic compounds that the sprayed coatings emit, the amount of floor space required to cure the coatings and by limited transfer efficiency.

Multi-step process for fully coloured construction elements


A lift assembly includes a first platform provided with a top surface, a pair of opposed sides, and wheels and brackets connected to one of the sides for rotating the assembly. A plurality of rectilinear support shafts have opposed end portions conjoined to the platform and extending upwardly therefrom, and are spaced at opposed corners of the platform. Inverted U-shape guide rails are telescopically engageable along a length of the support shafts and have a pair of rectilinear regions slidably positionable about the support shafts. A second platform is provided with top and bottom surfaces, and apertures formed at opposed corners thereof that are vertically registered with the support shafts. A lifting mechanism is included for vertically biasing the second platform and the guide rails along the support shafts. The lifting mechanism is connected to the top surface of the first platform and the bottom surface of the second platform.

1. Technical Field
This invention relates to lift assemblies and, more particularly, to a scissor-lift assembly for lifting an operator along a vertical plane.
2. Prior Art
Homeowners and small commercial contractors struggle with small interior and exterior projects that are at elevated heights, barely out of arms reach. They primarily rely on stepladders, stools, and extension ladders for these projects. Unfortunately, the user must constantly travel up and down these structures to retrieve tools and materials, which is time and energy consuming. Furthermore, the work area is limited to the reach of the user. Such stepladders, stools, etc. place the user in an unsafe situation that may result in their falling from an elevated height. For example, as the user leans to extend his reach, the ladder or stool may become unstable and tilt or the user may loose his grip or balance and fall to the ground. Also, the user needs to constantly reposition the structure as the work progress. This is very inefficient and wastes precious time and energy. Stability of the structure is also an issue when working on unleveled surfaces, especially when working outdoors.
Conventional aerial lifts are primarily designed for commercial and industrial users. Such a lift's initial purchase cost is high with significant reoccurring maintenance costs. The lifts employ hydraulics to elevate working platforms. The hydraulics require significant maintenance and constantly leak, making these machines unsuited for internal use for home or light industrial or small commercial operations. The relative size of the available machines also limits their use to external areas or internal spaces with wide doorways and high ceiling not commonly found in homes. Their use within a home or office is prohibited due to maneuverability through passageways and the leaking hydraulic fluid. Most conventional aerial lifts are powered by diesel engines, propane motors or large battery packs, that also limits their usage within structures due to environmental issues.
Accordingly, a need remains for a scissor-lift assembly in order to overcome the above-noted shortcomings. The present invention satisfies such a need by providing a lift assembly that is easily operated, convenient to use, relatively light weight in design, increases user safety, and saves time and money. Homeowners and small commercial business owners, such as painters, find the scissor-lift assembly quite helpful. The lift assembly eliminates the danger of falling off of an unstable structure while also increasing the available work area, resulting in fewer trips to locate tools and materials for the job.


The present invention concerns an improved charge pump. The charge pump efficiently charges a voltage signal while reducing its power consumption. The charge pump includes at least one diode configured to receive a voltage signal. Coupled to the diode(s) is at least one capacitive device that is capable of coupling charge onto the diode(s). For one embodiment, the capacitive device provides a constant capacitance to more efficiently charge the voltage signal. The charge pump also includes an oscillating circuit that is capable of providing each capacitive device with an oscillating signal that alternates between a first voltage level and a second voltage level at a predetermined frequency. The oscillating circuit includes an odd number of N inverters coupled in a ring wherein an output of the Nth inverter is coupled to the input of the first inverter. For an alternative embodiment, each of the N inverters may anticipate a voltage switch on its inputs and therefore capable of powering "off" before the voltage switch occurs. As such, unnecessary power consumption resulting from the short circuit current in each of the N inverters is substantially reduced or eliminated.

1. Field of the Invention
The present invention relates generally to the field of integrated circuits. More particularly, the present invention relates to the field of charge pumps.
2. Discussion of Related Art
Charge pumps are circuits that raise the voltage of a voltage signal. Typically, charge pumps raise the voltage signal to a higher voltage than the signal generated from the power supply of the integrated circuit ("IC"). For example, programmable logic devices may require a very high voltage (i.e. between 7-12 volts) to program the IC although the IC operates with a 5 volt power supply. Therefore, a charge pump is used to raise the 5 volt signal generated by the power supply to 7-12 volts during programming.
Although many different charge pump architectures exist today, the efficiency of the charge pump is typically related to how quickly the charge pump charges up the voltage signal. Current charge pumps use capacitive devices to charge the voltage signal. If the capacitive device is implemented with a metal oxide-semiconductor ("MOS") transistor, then the capacitive device does not start charging until the voltage across the gate terminal and the source/drain terminal approaches the threshold voltage of the MOS transistor.
As new technologies are developed to increase the speed of an integrated circuit, many integrated circuits are designed to operate with smaller power supplies such as a 3.3 volt power supply. By reducing the switching time between a logic "high" voltage level and a logic "low" voltage level or vice-versa, the IC is capable of operating at a faster speed. However, as the switching time is reduced, the lag period for turning "on" a capacitive device becomes a larger portion of the switching time. Therefore, it is desirable to turn "on" the capacitive device as soon as a voltage is applied to its input, especially in a high speed IC. This can be achieved by permanently turning "on" the MOS transistor. By eliminating this lag period, the charge pump raises the voltage level of a voltage signal more efficiently.
Because faster ICs generally consume more power than comparatively slow circuits, the circuit designer is challenged to minimize the overall power consumption of a high speed charge pump. Typically, the ring oscillator in a charge pump consumes a significant portion of the power consumed in a charge pump. Reducing the power consumption of the ring oscillator can be achieved by reducing the power consumption of each inverter in the ring oscillator. If the ring oscillator is implemented with CMOS inverters having a p-channel MOS transistor coupled to an n-channel MOS transistor, then the power consumption of the inverters can be reduced by eliminating its short circuit or crow-bar current. The short circuit or crow-bar current refers to the current that flows between Vcc and ground during the temporary period in which both the transistors are on (i.e. when the inverter switches voltage levels). Therefore, it is desirable to reduce the power consumption of the ring oscillator in a charge pump by eliminating short circuit or crow-bar current.


Polyvinyl chloride compositions and films formed therefrom are described which exhibit improved printability and resistance to weathering. The compositions generally comprise polyvinyl chloride, at least one plasticizer, at least one heat stabilizer, certain UV stabilizer(s), and print additives and/or other agents. In particular versions, the compositions utilize a combination of polyvinyl chloride resins. Also described are various vinyl-based laminates using the films which can be for example reflective products. Also described are methods of producing the noted laminates.

Retro-reflective film products are known which include a multi-layered construction of a plasticized polymeric vinyl film, a urethane bonding layer, glass beads embedded in a low-refractive index layer, vacuum-metallized aluminum and a pressure sensitive adhesive. These products are intended for long term outdoor use and are typically in the form of adhesive-backed films having print and/or decorative outer faces that are applied to vehicles and signage.
In many applications, the vinyl can become unstable due to exposure to weather elements and UV radiation. Once the vinyl begins to degrade, the reflectivity of the product is compromised. In addition, weathering of the vinyl typically results in cracking, delamination, or other undesirable physical changes in the product. Accordingly, a need remains for flexible vinyl films with improved weather stability.
Many retro-reflective film products receive indicia, text, and/or graphic designs printed along an outer face of the product. Printing on the vinyl film is typically accompanied with inconsistent performance and/or appearance between printed areas or regions on the product. In addition, differences in print image quality, intensity, and/or resolution can also occur between printed regions on the product. Accordingly, a need exists for flexible vinyl films with improved printability characteristics.

PVC compositions, films, laminates and related methods


A transport pod (1) of the invention for a mask or a semiconductor wafer (2) comprises a leakproof peripheral wall (3) surrounding an inside space (4) receiving the mask or the semiconductor wafer (2). Thermally conductive support means (11) hold the mask or the semiconductor wafer (2). A cold plate (7) thermally coupled to a cold source (8) generates a temperature gradient facing the main face (6) of the mask or the semiconductor wafer (2) that is to be protected against particulate pollution. The cold plate (7) is held by connection means (7b) including thermal insulation means (7c). An on-board energy source (9) powers the cold source (8). This significantly reduces deposition of polluting particles on the main face (6) of the mask or the semiconductor wafer (2).

In the fabrication of semiconductors and MEMS, wafers such as silicon wafers or masks are transported in transport pods or mini-environment enclosures that protect them from the pollution that is still present in the atmosphere of a cleanroom.
At present, stacks of silicon wafers having a diameter of 200 millimeters (mm) are transported in standard mechanical interface (SMIF) pods.
Stacks of silicon wafers having a diameter of 300 mm are transported in standardized front-opening universal pods (FOUPs).
Transport pods or mini-environment enclosures have also been devised that are adapted to transporting a single substrate wafer.
Semiconductor or other wafers typically remain for several weeks in a semiconductor fabrication unit between the various process steps. Throughout this time, semiconductor or other wafers need to be protected against any risk of pollution, which is why provision is made form them to be isolated from the atmosphere within cleanrooms, wafers being transported and conserved in mini-environment enclosures.
In present industrial applications, the atmosphere in a mini-environment enclosure is at atmospheric pressure. Such enclosures therefore do not require any energy source.
More recently, in order to improve the isolation and protection of wafers, proposals have been made to generate and maintain an inside atmosphere at low pressure. Unfortunately, a mini-environment enclosure needs to be disconnected during steps of being moved between different workstations. During such a disconnection period, the mini-environment enclosure must itself maintain the controlled atmosphere around the substrate it contains. That requires an energy source to be available in the mini-environment enclosure, together with a pumping system for maintaining the controlled atmosphere which is at very low pressure, i.e. at a pressure of the same order as the pressures that exist in the transfer and loading chambers leading to process chambers.
Whether or not they have means for generating and maintaining an inside atmosphere at low pressure, transport pods must necessarily be opened when inserting masks or semiconductor wafers, and also when extracting them. During open periods, polluting particles can penetrate into a transport pod, thereby degrading the quality of the atmosphere inside the transport pod. Such particles run the risk subsequently of becoming deposited on masks or semiconductor wafers contained in the transport pod.
Such pollution is harmful in the semiconductor industry since it leads to defects that spoil the quality of the microelectronic or micromechanical device being fabricated.
There is therefore a need to reduce the pollution of semiconductor wafers or masks while they remain within transport pods.

Transport pod with protection by the thermophoresis effect


An integrated circuit device includes a lightly doped region such as the base region of a bipolar junction transistor within a semiconductor body. The device further includes a UV barrier layer formed over the lightly doped region. The UV barrier protects the lightly doped region from damage that can occur during high energy plasma etching or UV irradiation to erase EPROM.

Bipolar junction transistors (BJTs) are commonly used in analog integrated circuit (IC) devices. A BJT includes two p-n junctions sharing a cathode or anode region. The shared region is called the base. The base is a lightly doped region. The base separates two regions of opposite conductivity type: the emitter and the collector. Depending on the conductivity types, a BJT can be of the NPN variety or the PNP variety.
Supplying a current to the base region of a BJT can induce a current of much greater magnitude between the emitter and the collector. The ratio between the current supplied to the base and the resulting current between emitter and collector can be referred to the gain of a BJT. The current between emitter and collector is the result of bidirectional flow of two type of charge carriers. Gain is reduced by recombination of these different types of charge carriers within the base region.

Taiwan Semiconductor Manufacturing Co., Ltd.