The present invention is for a polymer/polymer mixed matrix membrane and the use of such membranes in gas separation applications. More specifically, the invention involves the preparation of polymer/polymer mixed matrix membranes incorporating soluble polymers of intrinsic microporosity as microporous fillers. These polymeric fillers of intrinsic microporosity exhibit behavior analogous to that of conventional microporous materials including large and accessible surface areas, interconnected micropores of less than 2 nm in size, as well as high chemical and thermal stability, but, in addition, possess properties of conventional polymers including good solubility and easy processability. Gas separation experiments on these mixed matrix membranes show dramatically enhanced gas separation performance for CO2 removal from natural gas. Mixed matrix membranes prepared in accordance with the present invention can also be used in the separation of the following pairs of gases: hydrogen/methane, carbon dioxide/nitrogen, methane/nitrogen and olefin/paraffin such as propylene/propane.

In the past 30-35 years, polymer membrane-based gas separation processes have evolved rapidly. Membrane gas separation is of special interest to petroleum producers and refiners, chemical companies, and industrial gas suppliers. Several applications have achieved commercial success, including CO2 removal from natural gas and from biogas and enhanced oil recovery. For example, UOP's Separex® membrane is currently an international market leader for CO2 removal from natural gas.
The membranes most commonly used in commercial gas separation applications are polymeric and nonporous. Separation is based on a solution-diffusion mechanism. This mechanism involves molecular-scale interactions of the permeating gas with the membrane polymer. The mechanism assumes that each component is sorbed by the membrane at one interface, transported by diffusion across the membrane through the voids between the polymeric chains (free volume), and desorbed at the opposing interface. According to this solution-diffusion model, the membrane performance in separating a given pair of gases (e.g., CO2/CH4, O2/N2, H2/CH4) is determined by two parameters: the permeability coefficient (PA) and the selectivity (αA/B). The PA is the product of the gas flux and the membrane thickness, divided by the pressure difference across the membrane. The αA/B is the ratio of the permeability coefficients of the two gases (αA/B=PA/PB) where PA is the permeability of the more permeable gas and PB is the permeability of the less permeable gas. Gases can have high permeability coefficients because of a high solubility coefficient, a high diffusion coefficient, or both coefficients. In general, the diffusion coefficient decreases while the solubility coefficient increases with an increase in the molecular size of the gas. For high-performance polymer membranes, both high permeability and selectivity are desirable because higher permeability decreases the size of the membrane area required to treat a given volume of gas, thereby decreasing capital cost of membrane units, and because higher selectivity results in a higher purity product gas.
Polymers provide a range of properties including low cost, high permeability, good mechanical stability, and ease of processability that are important for gas separation. A polymer material with a high glass-transition temperature (Tg), high melting point, and high crystallinity is preferred. Glassy polymers (i.e., polymers at temperatures below their Tg) have stiffer polymer backbones and therefore let smaller molecules such as hydrogen and helium pass through more quickly, while larger molecules such as hydrocarbons pass through more slowly than polymers with less stiff backbones. However, polymers which are more permeable are generally less selective than are less permeable polymers. A general trade-off has always existed between permeability and selectivity (the so-called polymer upper bound limit). Over the past 30 years, substantial research effort has been directed to overcoming the limits imposed by this upper bound. Various polymers and techniques have been used, but without much success.
Cellulose acetate (CA) glassy polymer membranes are used extensively in gas separation. Currently, such CA membranes are used for natural gas upgrading, including removal of carbon dioxide. Although CA membranes have many advantages, they are limited in a number of properties including selectivity, permeability, chemical, thermal, and mechanical stability. One of the immediate challenges that needs to be addressed in CA polymer membranes is achieving higher selectivity with equal or greater permeability.
In order to enhance membrane selectivity and permeability, a new type of membranes, mixed matrix membranes (MMMs) have recently been developed. Almost all of the MMMs reported to date in the literature are hybrid blend membranes comprising insoluble solid domains such as molecular sieves or carbon molecular sieves embedded in a polymer matrix. They combine the low cost and easy processability of the polymer phase with the superior gas separation properties of the molecular sieve phase. These membranes have the potential to achieve higher selectivity with equal or greater permeability compared to existing polymer membranes, while maintaining their advantages. In contrast to the many studies on conventional polymers for membranes, only a few attempts to increase gas separation membrane performance with mixed matrix membranes of zeolite and rubbery or glassy polymers have been reported.
Most recently, McKeown et al. reported the synthesis of new polymers that are described as being of intrinsic microporosity, bridging the void between microporous and polymeric materials. These polymers can exhibit behavior analogous to that of conventional microporous materials, but, in addition, can be readily processed into convenient forms for use as membranes. Pure polymer membranes were prepared directly from some of these polymers possessing intrinsic microporosity and O2 over N2 gas separation performance has been evaluated. See WO 2005/012397 A2. These polymers of intrinsic microporosity, however, have never been studied as soluble microporous fillers for the preparation of mixed matrix membranes.

Mixed matrix membranes incorporating microporous polymers as fillers


A setting arrangement for a seat in a vehicle and particularly the backrest. The backrest includes at least three separate support elements, perhaps with one above another, possibly with lateral support elements laterally outwardly. Each of the support elements is independently adjustable in shape. A respective adjustment device adjusts the shape of each of the support elements. One control lever which is connected with all of the adjustment devices is movable in different directions for adjusting the adjustment devices and the support elements.

The present invention relates to a setting arrangement for a seat and particularly to control over the support elements in the seat.
A known practice is to provide vehicle seats with various adjustment facilities for adapting the shape of the seat to the individual who sits in it. Also known is the provision of such adjustments by means of various support elements which are placed at various positions in the seat and which may for example include rubber bladders whose shape may be altered by input/discharge of compressed air. In such cases, adjustment of the seat may be accomplished by opening the respective inlet/outlet valves of each of the rubber bladders. In this respect the state of the art uses at least one separate control element for each rubber bladder.
U.S. Pat. No. 5,038,086 refers to a setting arrangement for adjusting the two front seats in a vehicle. That setting arrangement includes a number of different setting elements for different possible adjustments. That setting arrangement includes, inter alia, a control lever in the form of a so-called xe2x80x9cjoystickxe2x80x9d by which the sitting surface of the seat can be raised or lowered by the control lever being moved respectively to the left or the right and by which the sitting surface can be shifted forwards or rearwards by the control lever being moved respectively forwards or rearwards.
With the known setting arrangements, vehicle seat adjustment in such a way as to suit the individual who sits in the seat is thus a lengthy and time-consuming operation. Moreover, if a vehicle driver tries to adjust the seat while driving, this may cause a traffic hazard.
The object of the present invention is to provide a setting arrangement by which the adjustment of a vehicle seat can be accomplished in a simpler manner than heretofore.
This object is achieved with a setting arrangement which incorporates only one control lever which is designed to make it possible to adjust the shape of said support elements. Only one control lever being used for adjusting all the support elements of the seat substantially simplifies the adaptation of the seat to the individual who sits in it. It also reduces the risk of traffic accidents in the event of adjustment being carried out by the vehicle driver while driving.
According to one embodiment of the invention, the support elements are placed in a particular configuration and the control lever is designed to initiate adjustment of the shape of the various support elements by its being movable in a manner which corresponds to said configuration. This means that the control lever can follow the mental picture which the user has of the system, i.e. the locations of the various support elements. Such a configuration also makes it easier to learn the operation of the setting arrangement and requires a minimum of attention from the user.
According to a further embodiment of the invention, the control lever is so designed that a movement forwards with respect to the normal direction of forward movement of the vehicle causes relevant support elements to shift outwards away from the seat, whereas a corresponding movement rearwards causes relevant support elements to shift inwards towards the seat. Such a control lever movement configuration corresponds in a substantially intuitive manner to operating the control lever in order respectively to take pressure out of, and put pressure into, one or more support elements.
According to a further embodiment of the invention, the control lever is so designed that a pulling movement outwards causes relevant support elements to shift outwards away from the seat, whereas a corresponding pushing movement inwards causes relevant support elements to shift inwards towards the seat. Such a control lever movement configuration corresponds in a substantially intuitive manner to operating the control lever in order respectively to take pressure out of, and put pressure into, one or more support elements.
According to a further embodiment of the invention, the setting arrangement includes a basic unit on which the control lever is arranged in such a manner as to protrude from the basic unit, while at the same time the control lever is designed to assume a neutral position in which it extends substantially perpendicular from the basic unit. In this case, said support elements may be arranged in a backrest of said seat. The control lever in said neutral position may also extend substantially horizontally and be so designed that a movement with a component directed upwards from said neutral position activates an upper support element in the backrest, whereas a corresponding movement with a component directed downwards activates a lower support element of the backrest. Such a control lever movement configuration corresponds in a substantially intuitive manner to operating the control lever in order respectively to take pressure out of, and put pressure into, support elements at various heights of the seat backrest.
According to a further embodiment of the invention, said support elements include two lateral support elements and at least one back support element which is arranged between said lateral support elements.
According to a further embodiment of the invention, substantially every support element includes a reservoir made of an at least partially flexible material which allows the reservoir to be expanded in at least one direction by input of a medium and be contracted in said direction by discharge of said medium.


A method is provided for converting oxygenates, e.g., methanol, to olefins, e.g., ethylene and propylene, comprising contacting said oxygenates and an aromatics co-feed, e.g., xylenes, with a framework gallium-containing molecular sieve catalyst comprising pores having a size ranging from about 5.0 Angstroms to about 7.0 Angstroms, e.g., ZSM-5, under production conditions effective to produce olefins. A catalyst composition is also provided, comprising a ZSM-5 zeolite-bound ZSM-5 zeolite having a bound zeolite of framework Ga-containing zeolite having a Si/Ga molar ratio ranging from 5 to 500 and a binder of Ga-modified, e.g., Ga-exchanged and/or Ga-impregnated, zeolite having a Si/Ga molar ratio ranging from 5 to ∞.

1. Field of the Invention
The present invention relates to a method for converting oxygenate, such as methanol and/or dimethyl ether, to olefins in a reactor over a framework gallium-containing medium pore molecular sieve catalyst such as ZSM-5 or ZSM-11 wherein oxygenate can be co-fed with aromatics. The method is especially useful for increasing ethylene/propylene product ratio.
2. Description of the Background Art
A remarkable growth in the production of synthetic fibers, plastics and rubber has taken place in recent decades. This growth, to a very large extent, has been supported and encouraged by an expanding supply of inexpensive petrochemical raw materials such as ethylene, propylene, as well as four and five carbon olefins. Along with this growth has been an increasing demand for alkylate, made by reacting olefins with isobutane, for use as a high octane gasoline component.
Burgeoning demand for olefins, particularly ethylene, propylene and butenes, has of course led to periods of shortage, causing substantial price increases in the feedstocks to various commercialized technologies. These feedstocks are largely C2 to C4 paraffins co-produced with natural gas and/or paraffinic straight run naphtha. Such feedstocks can be substantially more expensive than methane, making it desirable to provide efficient means for converting methane to olefins.
Conversion of methane to methanol followed by conversion of methanol to light olefins is among the most economic routes to make light olefins from methane. In this respect, it is known that methanol or dimethyl ether can be catalytically converted to olefin-containing hydrocarbon mixtures by contacting under certain conditions with particular types of crystalline zeolite materials. U.S. Pat. Nos. 4,025,575 and 4,038,889, for example, both disclose processes whereby methanol and/or dimethyl ether can be converted to an olefin-containing product over a Constraint Index 1-12 zeolite catalyst, particularly ZSM-5. In fact, ZSM-5 converts methanol and/or dimethyl ether to hydrocarbons containing a relatively high concentration of light olefins with prolonged catalyst lifetime before catalyst regeneration becomes necessary. U.S. Pat. No. 4,311,865 teaches the use of the medium pore zeolite, ZSM-5 (approximately 5.5 Angstroms) pore size, which is ion-exchanged with cobalt, and then calcined to produce a catalyst, and has been used to convert methanol to hydrocarbons (including olefins). This process uses ion-exchange to add the metal to the medium pore molecular sieve. Despite the durability of these medium pore size catalysts, they exhibit a low selectivity for ethylene when converting oxygenates. For example, HZSM-5 can exhibit ethylene selectivity of less than 5%.
It has also been reported that other types of zeolite catalysts can be used to convert methanol and/or dimethyl ether to olefin-containing hydrocarbons products containing higher proportions of light olefins than previously obtained with ZSM-5. For example, U.S. Pat. No. 4,079,095 discloses that zeolites of the erionite-offretite-chabazite type, and especially ZSM-34, can promote conversion of methanol and/or methyl ether to products comprising a major amount of ethylene and propylene. However, while erionite-offretite-chabazite type catalysts are highly selective to light olefins production, such smaller pore zeolites tend to age rapidly in comparison to ZSM-5 when used for methanol/dimethyl ether conversion, perhaps owing to the rapid buildup of coke inside the zeolite cages, which blocks the accessibility of methanol feed to the acid sites contained therein. Small pore catalysts such as SAPO-34 have been used to convert methanol to olefins, as described in an article by T. Inui, "Structure-Reactivity Relationships in Methanol to Olefins Conversion in Various Microporous Crystalline Catalysts, Structure-Activity and Selectivity Relationships in Heterogeneous Catalysts", pages 233-42, Elsevier Science Publishers, B. V., Amsterdam (1991). U.S. Pat. No. 5,962,762 to Sun et al. discloses a method for converting starting material to olefins comprising contacting the starting material with a small pore molecular sieve catalyst such as SAPO-34 under effective conditions to produce olefins, wherein the molecular sieve has been modified after synthesis by incorporation of a transition metal ion using a transition metal compound, wherein the transition metal ion is selected from Groups VIB, VIIB, and VII.
T. Mole, G. Bett, and D. J. Seddon, Journal of Catalysis 84, 435 (1983), disclose that the presence of aromatic compounds can accelerate the zeolite-catalyzed conversion of methanol to hydrocarbons. The article reports ethylene yields of 5-22% when methanol is catalytically converted in the presence of benzene or toluene over ZSM-5 at sub-atmospheric pressure, 279° to 350° C., and 100% methanol conversion. U.S. Pat. No 4,499,314 ('314 Patent) discloses that the addition of various promoters, including aromatic compounds, such as toluene, accelerate the conversion of methanol to hydrocarbons over zeolites, such as ZSM-5, which have a pore size sufficient to permit sorption and diffusion of the promoter. In particular, the '314 Patent teaches that the increased conversion resulting from the addition of the promoter allows the use of lower severity conditions, particularly lower temperatures, which increase the yield of lower olefins (column 4, lines 17-22). Thus, in Example 1 of the patent the addition of toluene as a promoter reduces the temperature required to achieve full methanol conversion from 295° C. to 288° C. while increasing the ethylene yield from 11 wt. % to 18 wt. %. In the Examples of the '314 patent the methanol feedstock is diluted with water and nitrogen such that the methanol partial pressure is less than 2 psia (14 kPa). U.S. Pat. Nos. 4,677,242 and 4,752,651 disclose the conversion of methanol to C2 to C4 olefins over various silicoaluminophosphates such as SAPO-34, and "non-zeolitic molecular sieves" (such as metal aluminophosphates), and teach that the addition of diluents, such as aromatic materials, having a kinetic diameter greater than the pore size of the molecular sieve, increases the ethylene to propylene ratio in the product.
Conversion of ethane to aromatics over GaZSM-5 is disclosed in U.S. Pat. No. 4,350,835. U.S. Pat. No. 4,605,805 discloses a catalyst for olefin/paraffin conversion that employs ZSM-5 having a framework wherein gallium is substituted for boron or iron. U.S. Pat. No. 5,023,391 discloses a process for the direct partial oxidation of methane with oxygen, whereby organic compounds comprising higher hydrocarbons are produced. The catalyst used in this reaction is a GaZSM-5 catalyst. This catalyst may be prepared by ion exchanging or impregnating a ZSM-5 catalyst with a suitable gallium salt such as gallium nitrate.
U.S. Pat. No. 5,981,817 discloses a xylene isomerization process conducted in the presence of hydrogen and at pressures in excess of 75 psig (620 kPa) over a ZSM-5 catalyst containing about 0.1 to 5 wt. % of at least one metal selected from the group consisting of zinc, copper, silver and gallium. The catalyst may be a zeolite bound zeolite prepared in accordance with U.S. Pat. No. 5,460,796.
All of the foregoing references are incorporated herein by reference.
In spite of the existence of methanol conversion processes utilizing a variety of zeolite catalysts and process conditions, there is a continuing need to develop new procedures suitable to convert an organic feed comprising oxygenates, such as methanol or dimethyl ether, selectively to light olefin products and, in particular, ethylene.

Production of light olefins from oxygenate using framework gallium-containing medium pore molecular sieve


A washing water supply apparatus for a dish washing machine which is capable of concurrently supplying washing water to both upper and lower spray arms or selectively supplying the washing water to either the upper spray arm or the lower spray arm based on the washing amount of dishes. The apparatus includes a casing for guiding washing water in a washing water flow path in order to convert a part of the washing water flow into a cross-flow, an orifice tube for increasing the flowing speed of the washing water introduced into the casing and discharging the same, a valve ball for opening/closing an orifice of the orifice tube, and movable in the interior of the casing in accordance with a flow direction of the washing water, and an actuator having a moving member for moving the valve ball toward the orifice.

1. Field of the Invention
The present invention relates to a washing water supply control apparatus for a dish washing machine, and in particular to an improved washing water supply control apparatus for a dish washing machine which is capable of concurrently supplying washing water to both upper and lower spray arms and selectively supplying the washing water to either the upper spray arm or the lower spray arm based on the washing amount of dishes.
2. Description of the Conventional Art
FIG. 1 is a cross-sectional view schematically illustrating a conventional dish washing machine.
As shown therein, in an upper portion of a housing 1, an upper rack 2 is disposed for receiving dishes to be washed, and an upper spray arm 3 is disposed below the upper rack 2 for spraying washing water to the dishes arranged in the upper rack 2.
A lower rack 4 is arranged below the upper spray arm 3 for receiving dishes therein. A lower spray arm 5 is disposed below the lower rack 4 for spraying washing water to the dishes arranged in the lower rack 4.
A washing water container 6 is disposed in a portion below the lower spray arm 5 for receiving washing water therein. A filter 7 is spacedly disposed in the washing water container 6 for filtering food debris which is formed during the dish washing, and a drainage pump 8 is attached to a lower portion of the washing water container 6 for draining the washing water therefrom to the outside.
A circulation pump 10 is disposed beside the washing water container 6 for introducing the washing water stored in the washing water container 6 through an introduction conduit 9 and supplying the washing water to the upper and lower spray arms 3 and 5, and upper and lower washing water conduits 11 and 11' are connected to the circulation pump 10 for guiding the pumped washing water to the upper spray arm 3 and the lower spray arm 5.
The operation of the conventional dish washing machine will now be explained.
First, in a state that the washing water is held in the washing water container 6, the circulation pump 10 is operated, and the washing water held in the washing water container 6 is introduced to the introduction conduit 9, and the thusly introduced washing water is pumped to flow to the upper and lower washing water conduits 11 and 11'.
The washing water introduced into the upper and lower spray arms 3 and 5 are sprayed through spray nozzles (not shown), for thus washing the dishes arranged in the upper and lower racks 2 and 4. Here, the upper and lower spray arms 3 and 5 are rotated in accordance with (i.e., in reaction to ) the spray direction of the spray nozzles.
Thereafter, the washing water after having washed the dishes is collected in the washing water container 6 through a washing water drainage path (not shown), and the filter 7 filters food debris from the collected washing water.
When the washing operation is finished, the operation of the circulation pump 10 is stopped, and the drainage pump 8 is operated, and then the drainage pump 8 discharges washing water and food debris to the outside.
However, when washing a small amount of dishes, in other words, when washing the dishes arranged in only one of the upper or lower racks, since both the upper and lower spray arms 3 and 5 are still operated, a large amount of washing water is needed, thus needlessly consuming the electric power.

Washing water supply control apparatus for dish washing machine


A process for purifying a stock Sr-90 solution containing stable and radioactive impurities, holding the purified Sr-90 solution for Y-90 ingrowth, and subsequently extracting the Y-90 from the Sr-90/Y-90 solution. The stock solution is sequentially passed through two thermoxide-type sorbents (T-3 and T-5), which hold the impurities while passing the Sr-90 solution. After ingrowth of Y-90, the Sr-90/Y-90 solution is passed through sorbent T-3, which preferentially sorbs the Y-90 while passing the Sr-90 solution. The Y-90 is then eluted from the T-3 sorbent. The T-3 and T-5 sorbents are specially prepared compounds of zirconium dioxide and titanium dioxide, respectively, that preferentially sorb Y-90 under predetermined conditions of solution pH and NaCl concentration.

The invention relates generally to a new process for the purification of a stock solution of Strontium-90 and the subsequent separation of ingrowth Yttrium-90 from the purified Strontium-90 solution. Multi-Ci quantities of Yttrium-90 can be generated of sufficient quality for medical applications while minimizing the amount of waste generated.
Yttrium-90 (Y-90 ) is a radioactive nuclide used in medicine as a biological tracer and for treating cancer, arthritis, and arterial restenosis. Y-90 is a short-lived daughter product of the radioactive isotope strontium-90 (Sr-90). It decays with a relatively short half-life of 64.2 hours to stable zirconium-90 via high-energy β-decay. The Sr-90 isotope itself is one of the many byproducts of the decay of uranium fission reactors. It has a half-life of 29.1 years. The decay of Sr-90 proceeds according to the following scheme:

It is desirable to produce Y-90 with minimal contamination with the parent radioisotope, Sr-90 . This is particularly important for medical applications since Sr-90 is extremely toxic. The Y-90 produced should also be free of toxic metal ions and other radioactive isotopes commonly found in stock solutions of Sr-90 coming from nuclear reactors since these impurities would interfere with radiolabeling applications. For commercial purposes, the Y-90 extraction process should be uncomplicated, be relatively quick due to the short half-life of Y-90, produce multi-Ci quantities of Y-90, , and minimize the radioactive waste generated.
The most common process currently in use for extracting Y-90 from Sr-90 employs ion-exchange methods. However, ion-exchange resins are subject to radiation damage and are generally only suitable for sub-Ci quantities of Y-90 . Furthermore, to achieve acceptable Y-90 yields often requires long ion-exchange columns and large volumes of eluent. Other methods of extracting Y-90 from Sr-90 include solvent extraction, precipitation, and various forms of chromatography. Solvent extraction methods are complicated and typically produce volumes of liquid organic waste contaminated with Sr-90. None of these methods meet all of the desirable characteristics enumerated above.
Accordingly, a need exists for an uncomplicated method of generating Y-90 that produces a pure, high yield product suitable for medical applications, while at the same time minimizing waste products.

Sr-90/Y-90 radionuclide generator for production of high-quality Y-90 solution


A method of in-situ cleaning a native oxide layer from the surface of a silicon wafer positioned in a vacuum chamber that is substantially free of oxidizing species by passing at least one non-oxidizing gas over the native oxide layer at a wafer cleaning temperature between about 650.degree. C. to about 1025.degree. C. for a sufficient length of time until such native oxide layer is removed.

In the fabrication of semiconductor devices on silicon wafers, various structures such as metalization layers, passivation layers, insulation layers, etc. are formed on a silicon substrate. The quality of the semiconductor device fabricated is a strong function of the processes with which these structures are formed. The quality is also a function of the cleanliness of the manufacturing environment in which the silicon wafer is processed.
Technological advances in recent years in the increasing miniaturization of semiconductor circuits require more stringent control of impurities and contaminants in the processing chamber of the semiconductor device. When the miniaturization of the device progressed to the submicron level, the minutest amount of contaminants can significantly reduce the yield of wafers.
Among the electronic materials frequently used for deposition on silicon wafers, silicon nitride has gained more importance in recent years. Silicon nitride is used extensively as a final protective passivation and coating layer for semiconductor wafers because of its excellent diffusion barrier characteristics against moisture and alkali ions. Silicon nitride is a desirable semiconductor material also for its high density and high dielectric properties.
The deposition of silicon nitride is usually performed by a low pressure chemical vapor deposition (hereinafter LPCVD) process in which dichlorosilane and ammonia are reacted together in a heated chamber. The reaction between silicon tetrachloride or dichlorosilane and ammonia normally takes place with nitrogen carrier gas at approximately 650.degree. C. or with hydrogen carrier gas at approximately 1,000.degree. C.
In a LPCVD process for the deposition of silicon nitride, the LPCVD chamber is first evacuated, a mixture of gases of silicon tetrachloride or dichlorosilane and ammonia is then introduced into the chamber which contains one or more silicon wafers each having a surface onto which a silicon nitride layer is to be deposited. The silicon wafers are generally heated to a deposition temperature at the time when the mixture of gases are fed into the chamber such that the gases decompose and thereby depositing a silicon nitride layer on the surface of the wafer. For instance, in a prior-art LPCVD system equipped with a horizontal boat that receives a plurality of silicon wafers positioned vertically in the chamber, reactant gases are injected into the chamber through a number of apertures and flow across the wafers. The use of such prior-art chambers encourages the growth of native oxide on the surfaces of the wafers.
Chemical native oxide is not a true silicon dioxide because it is not stoichiometrically formed. Native oxide layers are typically formed after a cleaning procedure partially due to the presence of moisture in the air. Native oxide is chemically different than grown silicon oxide which is intentionally deposited or formed. The physical properties of native oxide and silicon dioxide are also different, for instance, the refractive index of silicon dioxide is typically 1.45 while the refractive index for native oxide is approximately 2.2.
Native oxide also forms on wafer surfaces during prior processing steps which expose the wafer to ambient conditions. Some semiconductor processes include various cleaning steps prior to deposition of electronic materials. However, the cleaned wafers are usually still exposed to the ambient atmosphere after such cleaning and native oxide has the opportunity to grow on the wafer surface prior to the silicon nitride deposition.
For instance, the handling of multiple wafers in a wafer boat at multiple processing stations during a semiconductor fabrication process causes particular problems with regard to the formation of native oxide. The wafers take significant amount of time to load into the chamber, i.e. on the order of thirty minutes. During such loading step, air is present around the wafers and a native oxide layer readily forms on the newly cleaned surface of the wafer. This problem is compounded by the fact that such native oxide formation is not uniform, i.e., the first wafer in the chamber may grow a thicker layer of native oxide. This leads to a batch of integrated circuit structures having different electrical properties depending on the particular wafer from which the integrated circuit structures were formed.
It is therefore desirable that prior to the deposition of any layer of semiconductor materials on a silicon wafer, the surface of the wafer should be clean and free of contaminants such as native oxide or other impurities. Contaminants present at the interface between the silicon surface of the wafer and the layer formed thereon interfere with the electrical properties of the integrated circuit structures resulting in degraded performance or total failure of the structure.
It has been observed that the growth of silicon nitride films on a silicon wafer can be affected by the presence of native oxide on the silicon surface. This manifests itself as an "incubation time" during which growth of the nitride layer is retarded on the native oxide surface. A typical test for this incubation time can be conducted by depositing layers of silicon nitride under identical conditions but with varying deposition times. Longer deposition times correspond to thicker nitride films. A graph of the silicon nitride film thickness versus the deposition time therefore shows a straight line. This is shown in FIG. 1 as the solid line. The slope of this straight line represents the growth rate of the silicon nitride films.
Theoretically, the intercept at time equal to zero should show that the thickness of the nitride film is zero. However, in reality, thin films of silicon nitride exhibit a variable intersect of the horizontal axis at times from one to thirty or more seconds. The length of this time is referred to as the "incubation time", shown in FIG. 1 as A, since little growth of silicon nitride is observed during this time period. We have discovered that various process parameters affect the length of incubation time, as well as the thickness of native oxide on the silicon surface.
The incubation time has several detrimental effects in the formation of silicon nitride films on semiconductor devices. For instance, thin layers of silicon nitride are frequently used to form capacitor structures. The thickness control for thin silicon nitride dielectric films is therefore very surface and process dependent which in turn makes the capacitor control very difficult. Furthermore, a native oxide layer of variable thickness can reduce the capacitance of the dielectric layer, i.e. native oxide plus nitride, and further degrade the capacitor performance.
Others have attempted to clean a native oxide layer from the surface of a silicon wafer by a baking process at temperatures as high as 1,200.degree. C. However, such high temperature baking is only suitable in an epitaxial silicon growth process and not suited for a silicon nitride film process which is normally deposited at a much lower temperature.
It is therefore an object of the present invention to provide a novel method of in-situ cleaning native oxide from the surface of a silicon wafer that does not have the shortcomings of the conventional cleaning method.
It is another object of the present invention to provide a novel method of in-situ cleaning native oxide from the surface of a silicon wafer such that a clean interface is provided between a single crystal silicon wafer and a subsequently deposited semiconductor material.
It is a further object of the present invention to provide a novel method of in-situ cleaning native oxide from the surface of a silicon wafer such that the incubation period normally encountered in a silicon nitride film deposition process can be eliminated.
It is another further object of the present invention to provide a novel method of in-situ cleaning native oxide from the surface of a silicon wafer by heating the wafer to a modest temperature in an environment substantially free of oxidizing species such as oxygen and water.
It is yet another further object of the present invention to provide a novel method of in-situ cleaning native oxide from a silicon wafer surface by heating the wafer to a modest temperature in an environment substantially free of oxidizing species in the presence of at least one reducing gas.

Method for in-situ cleaning of native oxide from silicon surfaces


The semiconductor device includes a memory block including programmed pages and non-programmed pages, a peripheral circuit configured to perform a read operation of the memory block, and a control circuit configured to control the peripheral circuit so that a read voltage is applied to a word line coupled to a selected page among the pages for the read operation, a first pass voltage is applied to word lines coupled to the programmed pages among pages that are not selected for the read operation, and a second pass voltage lower than the first pass voltage is applied to word lines coupled to non-programmed pages among the pages that are not selected for the read operation.

1. Technical Field
The present disclosure generally relates to a semiconductor device and an operating method thereof, and more particularly to a read operation of a semiconductor device.
2. Related Art
A semiconductor memory device is a device that is used to store or program data on a temporary or permanent basis for use in computer or an electronic device. The semiconductor memory device includes a memory cell array for storing data.
The memory cell array may include a plurality of memory blocks. For example, a NAND flash array is grouped into a series of memory blocks, and memory cells constituting the memory blocks are arranged in a plurality of cell strings. Each of the cell strings may include a source select transistor, memory cells, and a drain select transistor. Typically, each cell string constituting a memory block shares word lines, source select lines, and drain select lines. Gates of the source select transistors included in different strings may be connected to a source select line, gates of the memory cells included in different strings may be connected to a word line, and gates of the drain select transistors included in different strings may be connected to a drain select line.
A group of memory cells, among the memory cells included in different cell strings, that are connected to the same word line may be referred to as a page, and a program and read operations may be performed on a page basis.

Semiconductor device and operating method thereof


A home security system includes an in-home system and a vehicle-mounted system, wherein the in-home system includes an in-home sensor that is mounted in a home and is capable of detect a state of the home, and an in-home communication module that is capable of communicating with the vehicle-mounted system to sense an abnormality from information of the in-home sensor, and wherein the vehicle-mounted system includes a vehicle-mounted device that is mounted on a vehicle that is capable of a vehicle outside output, and a vehicle-mounted communication module that is capable of communicating with the in-home system via the in-home communication module, and when the in-home system senses the abnormality, an instruction is received from the in-home system via the in-home communication module and vehicle-mounted communication module to deal with the abnormality using the vehicle-mounted device according to the instruction.

In recent automobiles, various sensors are attached thereto for a variety of safety and security functions. Under present circumstances, they are used only during traveling and not used during parking. However, it must be possible to enhance safety and security of the surroundings by using the vehicle-mounted sensor in parking. Thus, it has been considered to enhance a home security by utilizing sensor information of the automobile parked at one's own home.
For example, in Patent Document 1, there is disclosed a security system that is operated by connecting a home to a vehicle and makes an alarm for a suspicious person existing around the connected vehicle. Further, for example, in Patent Document 2, there is disclosed a security system that monitors one's own home or the inside of its site by sharing between a vehicle and a home information of various sensors such as a camera attached to the vehicle with a power line to thereby notify a user at home or a security company of an abnormality. Furthermore, for example, in Patent Document 3, there is disclosed a monitoring device as follows: when an automobile is being charged with physically connected to a power supply plug of one's own home, an abnormality sensing is performed on the basis of information of various sensors such as a camera attached to the automobile, and when an abnormality is sensed, a registered contact destination is notified of the effect that the abnormality is sensed.

Home security system and vehicle-mounted system used by same


A digital cellular telecommunication network (30) uses transcoders (50) which vocode voice using a maximal lossy compression algorithm which conserves spectrum usage. A call path for an intercepted call is looped from an outer space satellite (32) network into an intercepting terrestrial gateway (34). Compressed call data for each of two half-calls in this call path bypass normal transcoders (50) through the use of rate adapters (80) which translate between data communication protocols that operate at different data rates without voice coding and decoding. After rate adaptation, the compressed call data are combined in a conference bridge (90), and routed to a monitoring center (60). A subscriber unit (36), a second device (48), and the monitoring center (60) all receive call data which has experienced only one compression/decompression cycle.

Many countries in which telecommunication networks, and particularly wireless telecommunication networks, operate have call interception or wire-tap laws. From time to time, such laws require the telecommunication service provider to unobtrusively intercept specified calls taking place within a country's jurisdiction. However, in wireless telecommunication networks, and particularly in digital cellular telecommunication networks, true unobtrusive interception is often difficult to achieve or is achieved by wasteful use of the electromagnetic spectrum.
FIG. 1 shows a block diagram which illustrates call interception in a prior art Global System for Mobile communications (GSM) digital cellular radio telecommunication network. In this prior art network, a subscriber unit (SU) 10 engages in digital RF communication with a base transceiver station (BTS) 12 during a call. The BTS 12 is physically located on or near the surface of the earth within radio range of the SU 10. BTS 12 passes the communication through a base station controller (BSC) 14 to a nearby mobile switching center (MSC) 16 where two half-calls are connected together. Accordingly, for the vast majority of calls, both the SU 10 engaged in the call and the MSC 16 which connects two half-calls together reside within the jurisdiction of a single country. Moreover, for a vast majority of calls, call paths to an SU 10 in a country's jurisdiction pass through an MSC 16 which is also in the country's jurisdiction.
Worldwide telephony networks convey a single digital voice communication using the well known DS-0, 64 kbps, PCM standard. This standard protocol allows an accurate reconstruction of voice band analog signals. However, this standard protocol does not meet the needs of wireless communication because the dedication of outgoing and incoming 64 kbps channels to each call wastes the scarce electromagnetic spectrum which must be shared by all who use it. Consequently, digital wireless networks prefer to compress voice communication and transmit the communication at a lower data rate through a narrower bandwidth RF channel to conserve the spectrum.
Lossless compression would be a highly desirable form of data compression because it would permit expansion or decompression to precisely reconstruct an original data stream. However, lossless compression typically achieves only a modest reduction, for example less than 50%, in data quantity, data rate, and channel bandwidth. Accordingly, wireless telecommunication networks typically prefer to use a form of lossy data compression to achieve greater reductions in data quantity, data rate, and channel bandwidth.
Wireless telecommunication networks often employ the use of transcoders or vocoders to analyze human speech at a source node using sophisticated modeling techniques which reflect human speech capabilities. Transcoders compress voice using lossy compression techniques. Well known speech analysis techniques allow digitized speech of acceptable quality to be transported at data rates much lower than 50% of the DS-0 rate. Thus, the prior art network depicted in FIG. 1 uses a 13 kbps data rate for RF links. The use of lower data rates than DS-0 permits the telecommunication network to transport more human speech in the form of calls in a given geographical area using a given amount of spectrum. However, the lossy nature of these compression techniques prevents precise reconstruction of original voice signals.
As illustrated in FIG. 1 for a conventional wireless telecommunication network, a wireless half-call is routed through a high quality (HQ) transcoder 18 for decompression. Decompressed voice communication from two half-calls are connected together in the MSC 16. When the call is to be intercepted, this connection is formed through a conference bridge 20. A third port of the conference bridge 20 provides combined, decompressed voice communication from the two half-calls for routing to a monitoring center, as illustrated at call path 22.
The MSC 16 couples to the wire-based public switched telecommunications network (PSTN). A vast majority of communication with a typical SU 10 is conducted with telephonic devices coupled to the PSTN through a call path 24. Less often SU 10 communicates with an SU 10' supported by the same or other BSCs 14. When a second half-call is associated with SU 10', the second call path is routed through another HQ transcoder 18 for recompression prior to RF transport to SU 10'. The quality of communication suffers when SU 10 communicates with an SU 10' because two compression/decompression cycles are experienced. Since reconstruction of an original signal after a single compression/decompression cycle is not precise, reconstruction of an original signal after two sequential compression/decompression cycles is even less precise. However, since HQ transcoders are employed, only a minor signal quality degradation results from two compression/decompression cycles. Whether or not SU 10 is communicating with another SU 10' or with a telephonic device coupled through the PSTN, the signal quality is the same as it would be whether or not the call is being intercepted. Thus, calls are intercepted unobtrusively.
This conventional wireless communication network undesirably wastes the spectrum due to its reliance upon HQ transcoders. While HQ transcoders permit significant reductions over DS-0 rates, they fall far short of implementing maximal lossy compression and decompression algorithms. Maximal lossy voice compression and decompression algorithms are well known. Such algorithms permit the transmission of acceptable quality voice communication at data rates as low as 2.4 kbps. However, signal reconstruction after two compression/decompression cycles is noticeably inferior to signal reconstruction after one compression/decompression cycle. The prior art telecommunication network avoids using maximal lossy compression, at least in part, because the double compression/decompression cycles would yield unacceptably low quality voice signals.
In addition, the prior art wireless communication network is undesirable because it requires completion of a compression/decompression cycle for each SU half-call prior to connecting half-calls together in an MSC, whether or not the call will be intercepted. This requirement causes the prior art telecommunication network to avoid maximal lossy compression. However, in a network which uses maximal lossy compression to achieve improved spectrum usage, additional compression/decompression cycles are avoided to maintain reconstructed voice signal quality. In such a network call interception could become obtrusive rather than unobtrusive if additional compression/decompression cycles were required to intercept a call.

Radio telecommunication network and method for unobtrusive call interception via transcoder bypass


In an original cover closer adapted to support an original cover used on a copying machine and on which an automatic document feeder is provided, including two types of original cover closers different in construction from each other.

1. Field of the Invention
The present invention relates to an original cover closer for use on a copying machine or printing machine (will be referred to simply as "copying machine" hereinafter), and more particularly, to a closer for an original cover on which a heavy automatic document feeder is provided.
2. Description of the Prior Art
To copy a thick original such as a book, a well-known original cover closer comprises a mounting member to be installed on a copying machine body, a supporting member pivotably supported on the mounting member, a lifting member pivotably supported on a free end of the supporting member and to which the original cover is secured at the rear portion thereof, a resilient member provided between the mounting member and the free end of the supporting member, and a controlling member which controls the motion (turn) of the lifting member away from the supporting member.
Conventionally, in case a heavy automatic document feeder is additionally provided on the original cover and its center of gravity lies at the middle between the right and left of the original cover, a single large-torque closer is used with the original cover to support the latter at the middle portion thereof where the center of gravity, namely, the most of the weight, of the automatic document feeder is applied.
FIG. 1 shows the basic concept of the present invention will be outlined below. The original cover with which the closer of the present invention is used is generally indicated with a reference 1. It has a center of gravity 2. An automatic document feeder 3 is provided on the original cover 1. In case the center of gravity 2 should unavoidably be placed at either the right or left of the original cover 1 because of a geometrical relation between the original cover 1 and automatic document feeder 3, there must be provided an original cover closer A of one type destined to keep the original cover 1 at an intermediate opened angle and prevent it from falling abruptly and in addition an original cover closer B of another type destined to well balance the right and left of the original cover 1 and thus facilitate a smooth operation of the original cover 1 when closed or opened.


A new variety of Shrub rose suitable for garden decoration, having large clusters of flowers of pastel pink coloration.

This invention relates to a new and distinct variety of Shrub Rose. The varietal denomination of the new variety is Rosa hybrida cv. xe2x80x98FRYyeomanxe2x80x99. It has as its seed parent the variety known as xe2x80x98Amrudaxe2x80x99 (unpatented) and as its pollen parent the variety known as xe2x80x98Holfairyxe2x80x99 (unpatented).
Among the features which distinguish the new variety from other presently available and commercial rose cultivars known to the inventor are the following combination of characteristics: its numerous hairs on the peduncle, its large flowers clusters that are often somewhat pendulous, its distinct dark red pigment at the base of the filaments and top of the hypanthium and its very bunched nearly synstylate styles. The plant has a bushy upright to somewhat spilling plant growth habit, suitable for outdoor garden decoration.
Asexual reproduction of the new variety by budding as performed in Kern County and Upland, Calif., shows that the foregoing and other distinguishing characteristics come true to form and are established and transmitted through succeeding propagations. xe2x80x98FRYyeomanxe2x80x99 may be asexually propagated by cuttings, budding and grafting.
The new rose may be distinguished from its seed parent, xe2x80x98Amrudaxe2x80x99, by the following combination of characteristics: whereas xe2x80x98Amrudaxe2x80x99 bears double flowers (about 28 to 33 petals) of red coloration, xe2x80x98FRYyeomanxe2x80x99 bears pastel pink flowers with significantly lower petalage (about 10 to about 15 petals). The seed parent has a very low compact growth habit and is classified as a Miniature, whereas the new seedling has a larger upright to somewhat spilling habit and is classified as a Shrub.
The new variety may be distinguished from its pollen parent, xe2x80x98HOLfairyxe2x80x99, by the following combination of characteristics: whereas xe2x80x98FRYyeomanxe2x80x99 bears medium small flowers (about 4.4 to 5 cms. in diameter) of pastel pink coloration, xe2x80x98HOLfairyxe2x80x99 bears significantly smaller flowers (about 2.8 to about 3.4 cms. in diameter) of pure white coloration. The pollen parent has a significantly smaller mature plant habit than the new seedling.

Shrub rose plant named xe2x80x98FRYyeomanxe2x80x99


Methods, devices and system for determining fasting glucose level information and post-prandial glucose level information for diagnosing pre-diabetic and diabetic conditions based on monitored glucose measurements are provided.

The detection and/or monitoring of glucose levels or other analytes, such as lactate, oxygen, A1C, or the like, in certain individuals is vitally important to their health. For example, monitoring of glucose level is particularly important to individuals with diabetes and those with conditions indicative of onset of diabetes, in particular to identify physiological conditions that precede the onset of diabetes. If such physiological conditions can be identified in a timely manner, treatment or therapy by way of medication, exercise regimen, and/or modification to diet can effectively diminish the likelihood of diabetic conditions.
Techniques exist to determine if an individual has diabetes or has conditions indicative of onset of diabetic conditions, but these have drawbacks. Such techniques include fasting glucose test and oral glucose tolerance test. A fasting glucose test requires the individual to refrain from eating (i.e., fast) for a certain number of hours (e.g., 8 hours) before performing a blood glucose measurement. Consistent blood glucose measurement below 100 mg/dL is considered normal, measurements that are between 100 mg/dL and 126 mg/dL are considered to represent pre-diabetic condition, and measurements that are greater than 126 mg/L are considered to indicate diabetic condition. These are guidelines to assist physicians in their assessments of individuals suspected of having onset of diabetes. However, fasting for a prolonged period of time before the blood glucose measurement is performed may be inconvenient or not possible with certain individuals, resulting in potentially undiagnosed pre-diabetic or diabetic conditions.
An oral glucose tolerance test also requires that the individual refrain from eating for a predetermined time period (e.g., 8 hours) before performing a blood glucose measurement. Immediately following the blood glucose measurement after fasting for the predetermined time period, as part of the oral glucose tolerance test, the individual drinks a 75 gram oral dose of glucose solution. Two hours after drinking the glucose solution, a second blood glucose measurement is performed. A second blood glucose measurement of below 140 mg/dL is considered normal, a second blood glucose measurement between 140 mg/L and 200 mg/dL is considered to represent impaired glucose tolerance condition, and a second blood glucose measurement that is greater than 200 mg/dL is considered to indicate diabetic condition. In addition to the lengthy process for performing the oral glucose tolerance test, many find the need to drink the glucose solution as part of the test to be distasteful and undesirable. In some contexts, these drawbacks are significant enough to cause an individual to forego performing the oral glucose tolerance test, potentially resulting in undiagnosed pre-diabetic or diabetic conditions. Accordingly, there is an ongoing desire and an important need to improve glycemic control of individuals and in particular, to accurately and timely diagnose the onset of diabetes as well as diabetic condition itself in a way that is convenient, accurate, and timely.

Methods, devices and system for providing diabetic condition diagnosis and therapy


A sheet conveying apparatus for conveying a sheet having an image formed thereon includes: a first rotator; a second rotator that comes into pressure contact with the first rotator and contacts a surface of the sheet having the image formed thereon; and a plurality of ribs that are formed on a circumferential surface of the second rotator and disposed in an axial direction so as to be continuous in a circumferential direction. Among the plurality of ribs, the ribs disposed at both ends of the second rotator in the axial direction have a diameter that is smaller than those of the other ribs.

1. Field of the Invention
The present invention relates to a sheet conveying apparatus and an image forming apparatus.
2. Description of Related Art
In image forming apparatuses according to the related art, such as a copying machine, a printer, and a facsimile, a toner image formed on a photosensitive drum, which is an image bearing member, provided in an image forming portion is transferred onto a sheet, and the sheet is conveyed to a fixing device. Then, the fixing device heats and presses the sheet to fix the toner image to the sheet, and a sheet conveying apparatus discharges the sheet having the toner image fixed thereto to a sheet discharging and stacking portion.
However, in the image forming apparatus according to the related art, for example, when a roller comes into contact with a surface of the sheet having the toner image formed thereon or the rear surface thereof before the toner image that is heated and fixed at a high temperature is cooled down, the surface property of the contact portion is changed or the contact portion dissipates heat from the sheet earlier than the other portions. Consequently, the color of the toner image is changed, or a so-called roller trace, which is viewed as a brilliance difference, occurs, which results in deterioration of image quality. The roller trace is less likely to be visually viewed from a plain sheet, but is more likely to be viewed from a sheet having a high degree of brilliance, such as a projector sheet, glossy paper, or a glossy film.
In order to prevent deterioration of image quality due to the generation of the roller trace, for example, a structure has been proposed in which a roller having an insulating property is used as a conveying roller (discharge roller) of a sheet conveying apparatus contacted with a toner image that is heated and fixed at a high temperature (see Japanese Patent Laid-Open No. 2004-301291).
FIG. 10A is a diagram illustrating the structure of the roller having an insulating property. The roller includes an insulator layer 101 that is formed on a circumferential surface of a metal shaft 100, an uneven portion 102 that is formed on the insulator layer 101, and a surface protecting layer 103 that is formed on a circumferential surface of the insulator layer 101.
Furthermore, in order to prevent deterioration of image quality due to the generation of the roller trace, for example, a structure has been proposed in which a roller having a small contact area with a sheet is used as a roller of a sheet conveying apparatus contacted with a toner image that is heated and fixed at a high temperature (see Japanese Patent Laid-Open No. 2006-145586).
FIG. 10B is a diagram illustrating the structure of the roller. The roller 110 includes a plurality of minute protrusions 110a on an outer circumferential surface thereof that contacts a toner image heated and fixed to a sheet. The minute protrusions 110a enable the roller to come into point contact with the toner image on the sheet before the toner image is cooled down, thereby preventing the generation of a roller trace.
However, in the sheet conveying apparatus according to the related art that uses the roller having an insulating property, the manufacturing cost of the roller (insulating roller) is increased since a material forming the insulator layer is expensive. In addition, the hardness of an insulator forming the insulator layer is low. Therefore, when a skid comes into pressure contact with the roller, the insulator layer is compressed, and an insulating effect is lowered. As a result, a roller trace occurs, and image quality deteriorates. In order to prevent the insulating effect from being lowered, when the urging force of a spring that presses, for example, a skid against the roller, the conveying force (discharge force) of a pair of rollers is lowered. As a result, it is difficult to reliably discharge sheets.
In addition, in the sheet conveying apparatus according to the related art that has a plurality of minute protrusions on the outer circumferential surface thereof, in some cases, a toner parting property deteriorates by the plurality of minute protrusions formed on the outer circumferential surface of the roller. When the toner parting property deteriorates as described above, the following problem arises. When the sheet having the toner image heated and fixed thereto passes through a pair of rollers before the toner image is cooled down, toner on the sheet is peeled off, which results in deterioration of image quality. The peeled toner is likely to adhere to the rollers.
When a contact area between toner and the rollers is small and the heights of contact portions between the minute protrusions and the sheet are not uniform, the minute protrusions formed on the outer circumferential surface of the roller cause high pressure to be locally applied to the sheet. Consequently, toner on the sheet is peeled off, or the sheet is deformed and an uneven portion is formed on the sheet. As a result, image quality deteriorates.
In order to prevent the peeled toner from adhering to the roller, it is considered to form a surface protecting layer on the circumferential surface of the roller. However, when the surface protecting layer is formed, the protrusions on the outer circumferential surface of the roller are gently inclined. As a result, a contact area between toner on the sheet and the roller is increased, and it is difficult to sufficiently prevent the generation of a roller trace.

Sheet conveying apparatus and image forming apparatus


Methods and systems are directed to managing a protocol network failure in a network clustering system. A cluster master and each client member in the cluster are configured to determine a primary protocol network, a secondary protocol network, and the like, for exchanging a cluster protocol message. Each client member in the cluster determines its ‘active protocol network’ from at least the primary protocol network, and the secondary protocol network when it joins the cluster. Each client member tests its connectivity to the cluster master through the primary protocol network. If a client member detects a failure on the primary protocol network, it dynamically fails over to the secondary protocol network, or the like, without leaving the cluster. If connectivity to the primary protocol network is restored, the client member dynamically resumes the protocol message exchange on the primary protocol network without leaving the cluster.

The Internet has evolved into a ubiquitous network that has inspired many companies to rely upon it as a major resource for doing business. For example, many businesses may utilize the Internet, and similar networking infrastructures, to manage critical applications, access content servers, automate assembly and production lines, and implement complex control systems. Such reliance by businesses has driven the demand for higher protection and availability guarantees to resources over the network.
In response to the need for a networking infrastructure that provides both high availability of system resources and protection from failures, cluster architecture was developed. A cluster can be defined as multiple loosely coupled network devices that cooperate to provide client devices access to a set of services, resources, and the like, over the network. Members in the cluster may be employed to increase the reliability and availability of the access.
Many cluster architectures rely on an exchange of a cluster protocol message over the network. The cluster may utilize these messages to manage cluster membership, assign work, and detect member failure. The cluster may designate one of the networks to which it is connected to exchange the protocol messages.
However, the designated network, and its related connections and interconnections, are potential points of failure to the cluster. If a cluster member loses connectivity to the network, it is unable to participate in the protocol and often must leave the cluster. This may result in lost work, as well as degraded overall performance, access, and reliability of the cluster. Additionally, if the network fails, say due to a failure of a switch, hub, or the like, then the entire cluster fails and all connectivity through the cluster is lost. Therefore, there is a need in the industry for a highly reliable clustering infrastructure. Thus, it is with respect to these considerations, and others, that the present invention has been made.

System and method for managing protocol network failures in a cluster system


A synchronous transmission module is disclosed, including a UTOPIA interface chip for transmitting UTOPIA level-2 data. A pair of STM interface chips receive UTOPIA level-1 data. A UTOPIA memory converts UTOPIA level-2 data into UTOPIA level-1 data and transfers the UTOPIA level-1 data to one of the pair of STM interface chips, according to a transmission address. A UTOPIA interface control part converts the transmission address, depending on states of the STM interface chips. Therefore, variable duplexing of the plurality of STM interface chips in a board is made possible.

This application claims the benefit of the Korean Application No. P2000-78487 filed on Dec. 19, 2000, which is hereby incorporated by reference.
1. Field of the Invention
The present invention relates to a synchronous transport module (STM) and, more particularly, to variably simplexing/duplexing multiple STM links.
2. Background of the Related Art
Due to the rapid growth of the multi-media field, a communication network providing digital transmission of a wideband signal, such as a video signal, is in demand. A B-ISDN has been developed to meet this demand. The B-ISDN can meet a variety of service requirements of users, and particularly, the motion picture transmission made available by the B-ISDN has built a foundation for realizing a futuristic dream of an information society.
The B-ISDN requires an asynchronous transport mode (ATM) switching technology, in which ATM fixed length (53 byte) information blocks, called cells, are transferred by an ATDM method. When the ATM is used, an ATM communication device has a standard connection protocol between an ATM layer and a physical layer, providing versatility for different transmission media. Accordingly, even if the physical layer has a variety of forms, it is easy to connect to a Segmentation And Reassembly Sublayer (SAR) layer, if the protocol is followed.
The Universal Test & Operation & Physical Interface for ATM (UTOPIA), a standard interface for connecting the ATM layer and the physical layer, provides a cost saving by defining a common and standardized interface between the ATM layer and the physical layer. Moreover, the UTOPIA interface standard permits use of a first in first out (FIFO) memory between the ATM and the physical layer, which have different speeds, and supports 100 Mbps to 155 Mbps data rates, by a common interface of 8-bit data communication.
The UTOPIA interface standard is classified into application specific classes. A UTOPIA level-1 is based on an 8-bit data transmission and UTOPIA level-2 is based on a 16-bit data transmission.
In general, port duplexing of STM interface chips (or links) in an existing board is fixedly made to particular blocks. State information, such as an alarm signal, for each link is provided to duplex a plurality of links between boards.
A background art port duplexing of STM interface chips will be explained with reference to the attached drawings. FIG. 1 illustrates a block diagram of a background art STM, in which particular blocks are fixedly duplexed.
Referring to FIG. 1, the background art STM is a chip for processing an ATM cell. The STM is provided with a UTOPIA interface chip 16, which is a UTOPIA level-2 interface. The UTOPIA FIFO 14 transfers an ATM cell from the interface chip 16 to the transmission buffer 12, according to a FIFO method. The transmission buffet 12 transmits the ATM cell from the UTOPIA FIFO 14 to one of the STM interface chips 10 and 11, duplexed according to control signals (SOC, TCA, RCA, RXEN, TXEN) and a data signal (8-bit data) in the UTOPIA interface standard.
The STM interface chips 10 and 11 receive the ATM cells from the transmission buffer 12 and transmit externally received ATM cells to the reception buffer 13, at a rate of 155 Mbps. The reception buffer 13 receives the ATM cells from the STM interface chips 10 and 11 and transfers them to the bus-matching FIFO memory 15, according to control signals and data. The bus-matching FIFO 15 converts 8-bit parallel data received from the reception buffer 13 into 16-bit parallel data and transfers the converted data to the UTOPIA interface chip 16.
UTOPIA is an interface standard between a lower layer, like the physical layer supported by the STM interface chip (or link), and an upper layer, like the ATM layer. The UTOPIA level-2 interfaces the ATM layer and 16 physical layers, and UTOPIA level-1 interfaces the ATM layer and the physical layer, in a one-to-one relationship.
The bus-matching FIFO 15 converts 8-bit ATM cell data, received from the STM interface chips 10 and 11 and through the reception buffer 13, into 16-bit ATM cell data and forwards it. The STM interface chips 10 and 11 convert the 8-bit parallel data into a differential signal and transmit the differential signal at 155 Mbps.
The port duplexing operation of FIG. 1 will be explained below. The ATM cell is transferred from the UTOPIA interface chip 16 to the STM interface chip, according to the UTOPIA interface standard. The STM interface chips 10 and 11 are duplexed, as shown in FIG. 1, to enhance the transmission reliability.
Communication of the control signals SOC, TCA, RCA, RXEN, and TXEN in the UTOPIA interface standard and the 8-bit data are carried out by the transmission buffer 12, reception buffer 13, and the STM interface chips 10 and 11. The transmission buffer 12 and reception buffer 13 open paths to the first STM interface chip 10 and close paths to the second STM interface chip 11, using the control signals in a normal state. In the normal state, if the first STM link (or the interface chip) fails during operation of the board, the first STM interface chip 10 issues an alarm. When the first STM interface chip 10 issues an alarm, links between the first STM interface chip 10 and the transmission buffer 12 and the reception buffer 13 are cut off, and links between the second STM interface chip 11 and the transmission and reception buffers 12 and 13 are formed.
The background art STM has the following problems. First, when data (or an ATM cell) is transferred from the UTOPIA interface chip to the STM interface chip, the data is transferred from the UTOPIA interface chip to one of the duplexed STM interface chips. Effective management of the duplexed STM interface chips is difficult because the STM chips are fixedly duplexed.
Second, when the UTOPIA interface chip receives data from the STM interface chip, since the bus-matching FIFO is required to receive the data from the STM interface through the reception buffer, the reception of data can be troublesome when the reception buffer fails.
The above references are incorporated by reference herein where appropriate for appropriate teachings of additional or alternative details, features and/or technical background.


In a manufacture method of an electron-emitting device in which an electro-conductive film having an electron-emitting region is provided between electrodes disposed on a substrate, a step of forming the electron-emitting region comprises a step of forming a structural latent image in the electro-conductive film, and a step of developing the structural latent image. An electron source comprising a plurality of electron-emitting devices arrayed on a substrate, and an image-forming apparatus in combination of the electron source and an image-forming member are manufactured by using the electron-emitting devices manufactured by the above method. The position and shape of an electron-emitting region of each electron-emitting device can be controlled so as to achieve uniform device characteristics, resulting less variations in the amount of emitted electrons between the electron-emitting devices and in the brightness of pictures. Also, the need of flowing a great current for formation of the electron-emitting region is eliminated and hence the current capacity of wiring can be reduced.

1. Field of the Invention
The present invention relates to a novel method of manufacturing electron-emitting devices, and methods of manufacturing electron sources and image-forming apparatus based on the novel manufacturing method of electron-emitting devices.
2. Related Background Art
There are hitherto known two major types of electron-emitting devices; i.e., thermionic cathode type electron-emitting devices and cold cathode type electron-emitting devices. Cold cathode type electron-emitting devices include the field emission type (hereinafter abbreviated to FE), the metal/insulating layer/metal type (hereinafter abbreviated to MIM), the surface conduction type, etc. Examples of FE electron-emitting devices are described in, e.g., W. P. Dyke & W. W. Dolan, "Field emission", Advance in Electron Physics, 8, 89 (1956) and C. A. Spindt, "PHYSICAL properties of thin-film field emission cathodes with molybdenium cones", J. Appl. Phys., 47, 5248 (1976).
One example of MIM electron-emitting devices is described in, e.g., C. A. Mead, "Operation of Tunnel-Emission Devices", J. Appl. Phys., 32, 646 (1961).
One example of surface conduction electron-emitting devices is described in, e.g., M. I. Elinson, Radio Eng. Electron Phys., 10, 1290, (1965).
Surface conduction electron-emitting devices operate based on a phenomenon that when a thin film of small area is formed on a substrate and a current is supplied to flow parallel to the film surface, electrons are emitted therefrom. As to such surface conduction electron-emitting devices, there have been reported, for example, one using a thin film of SnO.sub.2 by Elinson cited above, one using an Au thin film G. Dittmer: Thin Solid Films, 9, 317 (1972)!, one using a thin film of In.sub.2 O.sub.3 /SnO.sub.2 M. Hartwell and C. G. Fonstad: "IEEE Trans. ED Conf.", 519 (1975)!, and one using a carbon thin film Hisashi Araki, et. al.: Vacuum, Vol. 26, No. 1, 22 (1983)!.
As a typical example of those surface conduction electron-emitting devices, FIG. 27 schematically shows the device configuration proposed by M. Hartwell, et. al. in the above-cited paper. In FIG. 27, denoted by reference numeral 1 is a substrate. 4 is an electro-conductive thin film formed of, e.g., a metal oxide thin film made by sputtering into an H-shaped pattern, in which an electron-emitting region 5 is formed by energization treatment called energization forming (described later). Incidentally, the spacing L between opposed device electrodes is set to 0.5-1.0 mm and the width W' of the electro-conductive thin film is set to 0.1 mm.
The configuration of surface conduction electron-emitting devices is not limited to the H-pattern mentioned above. By way of example, a surface conduction electron-emitting device may be constructed such that opposite portions of the H-pattern are formed as electrodes and an electro-conductive thin film is formed to interconnect the electrodes. In this configuration, the electrodes and the electro-conductive thin film may be different in material and thickness from each other.
In those surface conduction electron-emitting devices, it has been customary that, before starting the emission of electrons, the electro-conductive thin film 4 is subjected to energization treatment called energization forming to form the electron-emitting region 5. Specifically, the term "energization forming" means applying a DC voltage or a voltage gradually increasing at a very slow rate of about 1 V/min, for example, across the electro-conductive thin film 4 to locally destroy, deform or denature it, to thereby form the electron-emitting region 5 which has been transformed into an electrically high-resistance state. In the electron-emitting region 5, a fissure or fissures are produced in part of the electro-conductive thin film 4 and electrons are emitted from the vicinity of the fissure(s) when a voltage is applied to the electro-conductive thin film 4 so that a current flows through the device.
The surface conduction electron-emitting device is simple in structure and easy to manufacture, and hence has an advantage that a number of devices can be formed into an array having a large area. Therefore, a variety of application studies with a view of utilizing such advantageous features of the surface conduction electron-emitting device have, been conducted. Typical application fields includes, e.g., charged beam sources and display devices. As one example of applications in which a number of surface conduction electron-emitting devices are formed into an array, there is proposed an electron source that, as described later in detail, surface conduction electron-emitting devices are arrayed in parallel, opposite ends of the individual devices are interconnected by two wires (called also common wires) to form one row, and a number of rows are arranged to form a matrix pattern. (See, e.g., Japanese Patent Application Laid-Open No. 64-031332, No. 1-283749 and No. 2-257552). In the field of image-forming apparatuses such as display devices, particularly, plane type display devices using liquid crystals have recently become popular instead of CRTs, but they are not self-luminous and have a problem of requiring backlights or the like. Development of self-luminous display devices have therefore been desired. An image-forming apparatus is proposed in which an electron source having an array of numerous surface conduction electron-emitting devices and a fluorescent film radiating visible light upon impingement of electrons emitted from the electron source are combined with each other to form a display device. (See, e.g., U.S. Pat. No. 5,066,883).
In the known manufacture method, the forming step of forming the electron-emitting region is performed by applying a voltage to the electro-conductive thin film as explained above. With the Joule heat generated by the voltage applied, the electro-conductive thin film is partly denatured and deformed into a highly resistant state. That method has, however, had problems as noted below.
(1) Problem on control of position and shape of electron-emitting region:
The position where the electro-conductive thin film is denatured and deformed depends on various factors, but an important factor is in which part of the electro-conductive thin film the temperature is most substantially raised due to the heat generated.
If the electro-conductive thin film is uniform and the device electrodes have good symmetry, it is believed that the temperature is most substantially raised just at the middle between the electrodes. In practice, however, various factors bring about non-uniformity in the electro-conductive thin film, and symmetry of the electrode shape is often not satisfactory when the electrodes are formed by printing or the like. Also, it is believed that a high-resistance portion serving as the electron-emitting region is formed through a complex process in which when one high-resistance portion is formed in part of the electro-conductive thin film, current distribution is changed correspondingly, whereupon a next high-resistance portion is formed in the part in which the current is newly concentrated. Due to a slight disturbance, therefore, the shape of the electron-emitting region may have different widths depending on parts or may extend in a zigzag direction. This poses a difficulty in providing even device characteristics. In particular, when an electron source comprising an array of numerous electron-emitting devices and an image display device using the electron source are fabricated, the amount of emitted electrons and the brightness of pictures may vary.
For example, when an electron source is employed in an image display device having a large area, it is generally desired to form wiring and electrodes by screen printing from the standpoint of production techniques. In this case, however, the spacing between device electrodes opposed to each other is fairly wider than that based on film-forming by vacuum evaporation or sputtering and patterning by photolithography. This may lead to a problem that the electron-emitting region is more liable to extend in a zigzag direction.
(2) Problem on current capacity of wiring due to large forming current:
The step of the energization forming requires a much greater current than during the normal operation as an electron-emitting device. In particular, when an electron source comprising an array of numerous electron-emitting devices is fabricated, the forming treatment is generally carried out on a plurality of devices at a time (e.g., for each row of a matrix pattern of devices). In this case, it is required to flow a considerably greater current than when the electron-emitting devices are normally driven, and hence the wiring is required to have a current capacity for the current supplied. But once the forming treatment is completed, the current capacity actually required in the normal operation is reduced to a much lower level. Therefore, if such a large difference in the current capacity is eliminated, merits from the standpoint of production techniques are expected in points of, e.g., enabling a narrower width of the wiring and increasing the degree of freedom in apparatus design.
Further, because a great current flows through the wiring, a voltage drop is so increased that the state resulting from the forming treatment may be varied in the direction of the wiring to produce a systematic distribution in characteristics of electron emission.
To solve the problems as mentioned above, there has been a demand for establishing a novel method of manufacturing electron-emitting devices.

Methods and manufacturing electron-emitting device, electron source, and image-forming apparatus


The present invention discloses a process for manufacturing a grafted polyacrylamide flocculant of cationic/ampholytic ions, which is characterized by graft-copolymerizing starch or micro-crystalline cellulose as backbone with acrylamide, while using potassium permanganate as initiator, hydrolyzing and thereafter reacting with alkyl-amino-carbinol. Optionally, the product may also contain additives. It has advantages in readily available raw materials, low cost of production, simple technology and mild reaction conditions. The product has good overall performance, high flocculating ability, wide applicability and is an ideal sludge-dewatering agent and sewage treating agent.

1. Field of the Invention
The present invention relates to a process of production of a water-treating agent, in particular, relates to preparation of a grafted polyacrylamide flocculent containing cationic/ampholytic ions.
2. Description of the Related Art
Currently, with the development of environmental protection, requirement of water-treating agent becomes more and more urgent, and polyacrylamide is the most widely applied synthetic polymeric flocculant at present. But the production cost of polyacrylamide is relatively high. Therefore, the relevant professionals seek various approaches to lower cost and improve product performance. In particular, more attention is paid to cationic polyacrylamide, which is produced by copolymerizing a cationic monomer with acrylamide. For manufacturers in China the cationic monomer must be imported. Hence, development of a cationic flocculant with low cost of production, good performance and wide applicability is of real significance. Investigators, both domestic and abroad, paid attention to exploitative research of grafted polyacrylamide. In 80's decade, Chinese researchers succeeded in grafting acrylamide on to starch with cheap potassium permanganate instead of tetravalent cerium salt as initiator, and achieved high grafting efficiency and high degree of polymerization. It is a long step taken by acrylamide grafting technique toward industrial production. Due to the present of hydroxyl and amide functional groups and branched structure, the acrylamide grafted carbohydrate like starch has better flocculating effect than polyacrylamide under certain conditions, and further modifications may be made to give various derivatives to widen scope of application. No report on cationic modification of grafted polyacrylamide is found up to now. Domestically, though there is someone studied cationic modification of grafted polyacrylamide, but all carried out by direct reaction of formaldehyde with dimethylamine through classical Mannish reaction, which often results in crosslinking and product instability. Furthermore, a polyacrylamide with single cations in its structure is limited in application as a flocculating agent sometimes it must be used in combination with an anionic type polymeric flocculant, and thereby increasing trouble in operation. Additionally, owing to viscoelasticity, with increase of concentration, the mechanical load of stirring increased rapidly, which results in that the reaction is hard to control, and the product is also difficult to be diluted in use.

Method for manufacturing grafted polyacrylamide flocculant of cationic/ampholytic ions

Guangzhou Institute of Environmental Protection Sciences


Systems and methods for integrating a continuous glucose sensor 12, including a receiver 14, a medicament delivery device 16, a controller module, and optionally a single point glucose monitor 18 are provided. Integration may be manual, semi-automated and/or fully automated.

Diabetes mellitus is a disorder in which the pancreas cannot create sufficient insulin (Type I or insulin dependent) and/or in which insulin is not effective (Type 2 or non-insulin dependent). In the diabetic state, the victim suffers from high glucose, which may cause an array of physiological derangements (for example, kidney failure, skin ulcers, or bleeding into the vitreous of the eye) associated with the deterioration of small blood vessels. A hypoglycemic reaction (low glucose) may be induced by an inadvertent overdose of insulin, or after a normal dose of insulin or glucose-lowering agent accompanied by extraordinary exercise or insufficient food intake.
Conventionally, a diabetic person carries a self-monitoring blood glucose (SMBG) monitor, which typically comprises uncomfortable finger pricking methods. Due to the lack of comfort and convenience, a diabetic generally measures his glucose level only two to four times per day. Unfortunately, these time intervals are spread so far apart that the diabetic will likely find out too late that he has entered a hyper- or hypo-glycemic condition, sometimes incurring dangerous side effects. In fact, it is not only unlikely that a diabetic will take a timely SMBG value, but he will not know if his blood glucose is going up (higher) or down (lower), which inhibits his ability to make educated insulin therapy decisions.
Home diabetes therapy requires personal discipline of the user, appropriate education from a doctor, proactive behavior under sometimes-adverse situations, patient calculations to determine appropriate therapy decisions, including types and amounts of administration of insulin and glucose into his or her system, and is subject to human error. Technologies are needed that ease the burdens faced by diabetic patients, simplify the processes involved in treating the disease, and minimize user error which may cause unnecessarily dangerous situations in some circumstances.

Integrated insulin delivery system with continuous glucose sensor


Provided herein are methods for treating progressive familial intrahepatic cholestasis (PFIC) with an ileal bile acid transport (IBAT) inhibitor such as odevixibat, or a pharmaceutically acceptable salt thereof. Such methods can include reducing mean pruritus score, mean serum bile acid concentration, increasing height, normalizing weight, improving sleep, and improving liver parameters.

The compound 1,1-dioxo-3,3-dibutyl-5-phenyl-7-methylthio-8-(N-{(R)-α-[N—((S)-1-carboxypropyl) carbamoyl]-4-hydroxybenzyl}carbamoylmethoxy)-2,3,4,5-tetrahydro-1,2,5-benzothiadiazepine (odevixibat; also known as A4250):
is an inhibitor of the ileal bile acid transport (IBAT) mechanism. Specifically, odevixibat inhibits the natural reabsorption of bile acids from the ileum into the hepatic portal circulation. Bile acids that are not reabsorbed from the ileum are instead excreted into the feces. The overall removal of bile acids from the enterohepatic circulation leads to a decrease in the level of bile acids in serum and the liver. Odevixibat, or a pharmaceutically acceptable salt thereof, is therefore useful in the treatment of liver diseases that are associated with elevated bile acid levels, and particularly in the treatment of rare paediatric cholestatic liver diseases including progressive familial intrahepatic cholestasis (PFIC).

Treating progressive familial intrahepatic cholestasis (PFIC) with IBAT inhibitors


A dispenser for dispensing a liquid includes a chamber holding a supply of liquid, an annular conduit substantially filled with liquid from the chamber, and a thermoelectric transducer near one end of the annular conduit. Upon application of electrical current to the thermoelectric transducer, the transducer operates to cause boiling of a quantity of liquid in the annular conduit. Expansion of a resulting bubble forces liquid out the end of the annular conduit. The dispenser may include battery powered electronic control circuit that includes a supercapacitor. The liquid may be dispensed in periodic bursts. In one application, the dispenser is especially suited to automatically and unobtrusively dispense a fragrance, perfume, or other personal care liquid worn by a person. In some applications, the dispenser may be worn on or under an article of clothing, or attached to an article of jewelry.

Various fragrances, perfumes, and other personal care products are often worn so that the wearer exudes a pleasant or attractive scent. Fragrances and perfumes are typically mixtures or solutions of various volatile aromatic compounds in solvents or carriers, and may contain other components as well. The aromatic compounds may be naturally occurring, or may be synthetic. A typical fragrance may contain a mixture of compounds so that the exuded scent is complex, and the scent may change with time as compounds of differing volatility disperse at different rates.
Typically, a fragrance dissipates with time, and is reapplied periodically during the day or during a social engagement. The dissipation rate of a fragrance is variable, and is affected by the volatility of the fragrance, the skin characteristics of the wearer, temperature, air movement, and many other factors. The frequency at which a fragrance needs to be reapplied depends on the dissipation rate, and also on the personal taste of the wearer.
Manually reapplying a fragrance may be inconvenient and may cause an unwanted disruption in a social occasion. It would be desirable for a fragrance to be dispensed or reapplied automatically and unobtrusively. Previous fluid dispensing systems have suffered various difficulties, including large size, excessive power consumption, and poor alignment between the size of droplets of fluid dispensed with the needs of a fragrance dispenser.

Subminiature thermoelectric fragrance dispenser