A method of routing a roaming cellular data terminal (12), for example an M2M device or telephone handset to an APN includes providing a DNS 20 in a roaming network 2 which resolves a FQDN to a local POP remote 22 from the home POP 18 in home network 6.

Conventionally, when a cellular modem wishes to access a packet session using for example GPRS, 3G or 4G technology the communication is to a specific network which has an access point, the name of the access point being known as an access point name, APN. This access point name is thus the name of an access point which connects to the packet network. Located at this access point is a Gateway GPRS Support Node, GGSN.
The mobile device reaches the appropriate GGSN through a Serving GPRS support node (SGSN) which is responsible for connecting to packet networks for mobile phones in a particular geographic location.
The protocols for the naming of these concepts, in particular the APN, are contained in the document 3GPP TS 23.003 V12.0.0 (2013-09). "Technical Specification 3rd Generation Partnership Project—Technical Specification Group Core Network and Terminals—Numbering, addressing and identification (Release 12)", at www.3gpp.org, which teaches the definition and syntax of a number of concepts as used in such technology.
The format of the APN (the name of the network) is as follows. The APN is identified with an APN Operator Identifier, APN-OI, which may be derived from the IMSI as mncMNC.mccMCC.gprs, described by 3GPPTS23.003V184.108.40.206. In this format, "mnc" is a string and MNC is the numeric identifier of the network within a country. Similarly "mcc" is a string and MCC the numeric identifier of the country. An example of an APN OI is mnc058.mcc234.gprs, which is an identifier of the APN (in this case of Manx telecom). This default APN Operatorldentifier is used for roaming situations.
For example, using a general packet radio service, GPRS network, the user of the mobile device (or the software in the device) may select as the network the APN name "eseye.com". This corresponds to a particular GGSN which represents the link to that network.
The GGSN is identified by a fully qualified domain name FQDN. The FQDN is made up of the APN name followed by the APN-OI so that the resulting FQDN would in the example be eseye.com.mnc058.mcc234.gprs. This FQDN is transmitted by the mobile device to the local SGSN which looks up "eseye.com.mnc058.mcc234.gprs in a local domain name server. The domain name server returns the IP address of the corresponding GGSN and the SGSN then communicates the relevant data with the required GGSN using the returned IP address. In this way, packets from the mobile phone are routed to the correct GGSN where they are connected onwards to a local network or the internet.


In order to make it possible to set up an alarm method which is rich in variation, a mobile phone is configured so that a plurality of alarm times are related to the same group, the group to which a plurality of alarm times are related is set to activation or cancellation, and when there comes any one of a plurality of alarm times which are related to the group being set to activation, an alarm is raised. Since setting to raise an alarm at a plurality of alarm times, or cancellation of the setting can be made, an alarm method rich in variation can be configured.

1. Field of the Invention
This invention relates to a clock and an alarming method, and more specifically, to a clock provided with a function of raising an alarm at a plurality of times and an alarming method executed by the clock.
2. Description of the Related Art
In recent years, mobile phones available in the market are provided with alarming function of, when setting up an alarm time, raising an alarm sound. Moreover, some mobile phones are provided with snooze alarming function of raising an alarm at a previously setup time interval after the alarm time. Furthermore, there is known a wake-up call setting method that makes it possible to alter the time interval in snooze alarming function while keeping the snooze alarming function valid. This wake-up call setting method comprises: a step of making a wake-up call ring; a step of, when a predetermined key is inputted during ringing of the wake-up call, reconfiguring a new wake-up call interval by using an input value of the key concerned and a basic time interval; and a step of making the wake-up call ring at said reconfigured wake-up call interval.
However, since the conventional wake-up call setting method has a single alarm method in regard to type of sound, and loudness of sound, etc., it can only repeat the same alarm method. For this reason, since all the methods of raising an alarm at different times are the same, there is a problem that the present time cannot be known unless a user counts the number of alarms or unless the user see a displayed time.

Clock provided with function of raising alarm at more than one time and alarming method


A facility and method for analyzing and classifying calls without transcription via keyword spotting is disclosed. The facility uses a group of calls having known outcomes to generate one or more domain- or entity-specific grammars containing keywords and related information that are indicative of particular outcome. The facility monitors telephone calls by determining the domain or entity associated with the call, loading the appropriate grammar or grammars associated with the determined domain or entity, and tracking keywords contained in the loaded grammar or grammars that are spoken during the monitored call, along with additional information. The facility performs a statistical analysis on the tracked keywords and additional information to determine a classification for the monitored telephone call.

Businesses in industries such as financial services, insurance, travel and hospitality, retail, cable and satellite television rely on voice contact with customers to answer client inquiries, make sales, and provide technical support. The increasing sophistication and use of smart phones and advanced mobile devices by customers has led to a more direct relationship in how advertisements drive phone calls. In particular, because customers are increasingly receiving advertisements on the same device used to make phone calls, the resulting ease of responding to advertisements by phone has facilitated closer relationships between customers and advertisers. For businesses across multiple domains or industries who send advertisements, every contact with a customer is an opportunity to make a lasting impression, to gather customer data, or to strengthen a customer's loyalty to the business. With regard to customer calls, it is desirable to know whether customers are receiving quality customer service that includes accurate information, adherence to professional communication standards, and the conveyance of a feeling of being valued by the business. It is also desirable for the business to understand what occurs during a phone call and how specific advertising campaigns affect the outcome of calls. This understanding can allow companies to better understand information relating to marketing campaigns, including how lead generation results in customer sales and retention.
One method used by businesses to track and analyze voice transactions is call recordation, with or without transcription. By listening to recorded customer calls (in their entirety or in samples), or by reviewing the transcripts of recorded customer calls, businesses hope to gain insight from conversations with real customers. However, the recording and transcription of calls incurs several problems and disadvantages, such as agent and/or caller objections and the need for expensive and specialized equipment. Recording and transcription of calls also raise legal and privacy concerns. For example, recording or transcribing information regarding an individual's medical health may violate certain laws, such as the Health Insurance Portability and Accountability Act (HIPAA). Similarly, federal and state privacy laws, as well as a general privacy concerns of the public, may arise when recording or transcribing certain personal information such as Social Security Numbers, credit card numbers, bank account numbers, passport numbers, physical street addresses, Protected Health Information (PHI), or other Personally Identifiable Information (PII). As a further example, recording or transcribing information may raise concerns regarding certain state and federal anti-discrimination laws with regard to national origin, race, color, religion, age, gender, pregnancy, sexual orientation, citizenship, familial status, disability status, veteran status, genetic information, or any additional number of protected classes under state or federal law. Moreover, as the volume of calls increases, the amount of storage and processing associated with maintaining a record of every call becomes increasingly prohibitive.
Another technique which businesses utilize to evaluate calls and boost advertising performance is known as call mining or keyword spotting. In call mining, businesses identify key words and phrases to be tracked in every call (e.g., "credit card," "appointment," "thank you," "sale") so as to determine which calls were converted into sales or appointments, and caller intent, needs and pain points. While the aim of call mining is to find successful outcomes and conversions, call mining is based on the words spoken in the call, acquired in either a manual or automated fashion. In general the calls must be recorded or transcribed, which as noted can be costly or prohibited for various reasons. In some cases, a transcript can be inaccurate because the source audio was of poor quality. Those skilled in the art will appreciated that the source audio may be real time, near real-time, transcribed, or a combination thereof. In other cases, a transcript can be inaccurate because large vocabulary speech recognition generally becomes less accurate as the size of the vocabulary grows larger. Therefore, if a relatively large vocabulary (e.g., the entire English dictionary) is needed, the resulting speech recognition may tend to be inaccurate. Moreover, at times, the vocabulary of the conversation can be foreign to a transcriber, and the transcribed results of low accuracy. Other schemes to analyze call outcomes such as live monitoring can also involve additional costs and drawbacks. As such, previous attempts at call mining have often proven to be inaccurate, unworkable, or prohibitively expensive.

System and method for analyzing and classifying calls without transcription via keyword spotting


A fuzzy rough classification section 7 classifies an input pattern into a plurality of category groups and calculates their attribution factors. A plurality of fine classification sections 8 calculate similarities in respective category groups. In each fine classification section 8, a weight change amount control section 82 controls the weight change amount in an associated similarity calculating section 81 in accordance with the group attribution factor selected by a second group selecting section (10), thereby enabling a cooperative learning operation among plural fine classification sections 8. A force learning control section 17 performs a supplemental learning operation, if the input pattern is rejected regardless of its correctness, until its reject judge value is reduced below a predetermined reject threshold.

1. Field of the Invention
The present invention generally relates to a learning type recognition & judgement apparatus performing a learning operation of an input pattern data and recognizing the same.
2. Prior Art
According to this kind of conventional apparatus, an input pattern data is roughly classified to select the category group to which the input data belongs. Next, in the selected category group, fine classification is performed to recognize the input data. For example, this kind of learning type recognition & judgement apparatus is disclosed in "A Large Scale Neutral Network CombNET-II", Paper Journal of the Institute of Electronic Information and Communications, D-II Vol. J75-D-II No.3 pp545-553.
FIG. 15 is a schematic block diagram showing an arrangement of a conventional learning type recognition & judgement apparatus. In FIG. 15, reference numeral 1 represents a rough classification section which comprises a plurality of input sections 1a and a plurality of multi input/output signal processing sections 1b. With this arrangement, rough classification section 1 calculates an output value (adaptation or fidelity) of each category group with respect to the input pattern signal X, thereby roughly classifying the input pattern signal into respective category groups. Reference numeral 2 represents each of a plurality of fine classification sections. Each fine classification section 2 comprises a plurality of input section 2a, a plurality of multi input/output signal processing sections 2b and a maximum value selecting section 2c. With this arrangement, each fine classification section 2 finely classifies the input signal in each category group.
More specifically, a fine classification input signal selecting section 4 generates the input pattern signal which is entered into each fine classification section 2 through input sections 2a. Each multi input/output signal processing section 2b multiplies the output of an associated lower-layer input section 2a or multi input/output signal processing section 2b with a weighting coefficient reflecting a degree of connection, and sums up resultant multiplication results. Then, thus obtained summation value is processed by an appropriate threshold, and is then outputted.
These plural multi input/output signal processing section 2b are arranged in a multi-layer structure without no mutual connection in each layer. And the network is constituted so as to propagate signals only to upper layers, thereby obtaining the similarity degree of the input pattern signal to each category in the category group. Maximum value selecting section 2c selects the maximum value among the outputs generated from plural multi input/output signal processing sections 2b of the most-highest layer.
Reference numeral 3 represents a group selecting section which selects a plurality of category groups among the output values (adaptations) of rough classification section 1. The above-described fine classification section input signal selecting section 4 selects a fine classification section 2, to which the input pattern signal is entered, based on the group selecting information obtained in group selecting section 3. Reference numeral 5 represents a discriminating section which comprises a plurality of similarity calculating sections 5a and a category discriminating section 5b. Each similarity calculating section 5a calculates a similarity of each category based on the adaptation of the category group selected by group selecting section 3 and the output value of the fine classification section 2 corresponding to its category group. Then, category discriminating section 5b finds out the maximum value of the resultant similarities of categories, thereby discriminating the input pattern signal X.
An operation of the above-described conventional learning type recognition & judgement apparatus will be explained, hereinafter. Input pattern signal X, consisting of n feature data of an object to be recognized, is expressed by the following equation 1. EQU X=(x.sub.1,x.sub.2, - - - ,x.sub.n) (1)
This input pattern signal X is first entered into the input sections 1a of rough classification section 1. There are provided a total of "n" input sections 1a; this number "n" is; equal to the number of feature data of the pattern data. Each feature data x.sub.i is entered into a corresponding input section 1a. Each multi input/output signal processing section 1b multiplies each input x.sub.j entered from its associated input section 1a with a relevant weighting coefficient v.sub.ij (1.ltoreq.i.ltoreq.m.sub.r ; m.sub.r is the number of category group, 1.ltoreq.j.ltoreq.n) representing the degree of linkage therebetween, and obtains the sum of all multiplication results. As expressed by the following equation: 2, the obtained result is referred to as a weighting coefficient vector V.sub.i of the input pattern signal X and each multi. input/output signal processing section 1b. EQU V.sub.i =(v.sub.i1,v.sub.i2, - - - ,v.sub.in) (2)
Multi input/output signal processing section 1b outputs a value obtained by dividing the multiplication result by the norm .vertline.X.vertline., .vertline.V.sub.i .vertline. of the equations (1) and (2). More specifically, the output value sim (X,V.sub.i) of a multi input/output signal processing section 1b is expressed by the following equation 3 using its weighting coefficient vector V.sub.i. EQU sim (X,V.sub.i)=(X.multidot.V.sub.i)/(.vertline.X.vertline..multidot..vertline .V.sub.i .vertline.) (3)
where X.multidot.V.sub.i =.SIGMA..sub.j (x.sub.j .multidot.v.sub.ij)
.vertline.X.vertline.=(.SIGMA.x.sub.j.sup.2).sup.0.5 PA2 .vertline.Vi.vertline.=(.SIGMA.v.sub.ij.sup.2).sup.0.5
Weighting coefficient vector V.sub.i is designed beforehand too let a predetermined multi input/output signal processing section 1b generate a maximum output in response to a similar input pattern signal.
This kind of weighting coefficient vector Vi has been conventionally designed in the following manner. First of all, in a first step, in response to each entry of the input pattern signal X for designing the weighting coefficient vector, a vector V.sub.c having the most-largest sim (X, V.sub.i) is obtained to bring V.sub.c into a closer relation to X. In other words, X is optimally matched with V.sub.c. If a predetermined number of input pattern signals are optimally matched with a particular weighting coefficient vector, a region covered by this weighting coefficient vector is divided into two.
Next, in a second step, optimal matching vector V.sub.i is obtained for each of all the input pattern signals used for designing the weighting coefficient vector. Then, it is checked whether there is any change in a comparison between a resultant one and the previous one. If any change is found, a corresponding vector V.sub.i is modified. In this case, the region covered by this weighting coefficient vector is divided appropriately in the same manner as in the first step. The second step is repetitively performed until modification and division are no longer required.
By executing the design of the weighting coefficient vector in this manner, the input pattern signal is roughly classified into a plurality of category groups. The output of each multi input/output signal processing section 1b, which represents an adaptation of each category group with respect to the input pattern signal X, is sent to group selecting section 3.
Group selecting section 3 selects an arbitrary number of category groups in order of the largeness of the adaptation obtained in rough classification section 1, and separately generates the group selecting information indicating the selected category groups and the corresponding adaptations. Based on the group selecting information obtained from group selecting section 3, fine classification input signal selecting section 4 selects fine classification sections 2 into which the input pattern signal should be entered, and sends the input pattern signal to these selected fine classification sections 2.
In each of the fine classification sections 2 corresponding to the category groups selected by group selecting section 3 (i.e. fine classification sections 2 which received the input pattern signal X from fine classification input signal selecting section 4), the input pattern signal X is first entered into input sections 2a. There are provided a total of "n" input sections 2a; this number "n" is equal to the-number of feature data of the input pattern signal X. Each feature data x.sub.i is entered into its corresponding input section 2a. Each multi input/output signal processing section 2b in the fine classification section 2 multiplies the output of an associated lower-layer input section 2a or multi input/output signal processing section 2b with a weighting coefficient representing the degree of connection, and sums up resultant multiplication results. Then, thus obtained summation value is converted through an appropriate threshold function, and is then sent to its upper layer. The total number of multi input/output signal processing section 2b constituting the most-highest layer is identical with the number of categories of the pattern data involved in each category group. Hence, each multi input/output signal processing section 2b of the most-highest layer is related to each of these categories in a one-to-one relationship. Maximum value selecting section 2c selects the maximum one of outputs generated from multi input/output signal processing sections 2b of the most-highest layer, and sends out this maximum output value together with a category corresponding to the selected multi input/output signal processing section 2b.
The weight coefficients of each multi input/output signal processing section 2b are learned beforehand in such a manner that, when the input pattern signal involves each category in the category group, the highest-layer multi input/output signal processing section 2b corresponding to each category always generates the maximum output.
More specifically, this kind of weighting coefficient learning operation is carried out by the learning algorithm generally called the "back-propagating error method", which is disclosed, for example, in "Learning Representations by Back-Propagating Errors," by D. E. Rumelhart, G. E. Hinton and R. J. Williams, Nature, vol.323, pp.533-536, Oct. 9, 1986.
Hereinafter, an abstract of the back-propagating error method will be explained.
First, the input pattern signal X used for learning the weighting coefficients is entered into input sections 2a of fine classification section 2. As described above, each multi input/output signal processing section 2b in the fine classification section 2 multiplies the output of an associated lower-layer input section 2a or multi input/output signal processing section 2b with a weighting coefficient representing the degree of connection, and sums up resultant multiplication results. Thus obtained summation value is converted through an appropriate threshold function, and is then sent to its upper layer.
Assuming that "o.sub.k " represents an output signal of all of multi input/output signal processing sections 2b of the most-highest layer while "t.sub.k " represents a desirable output signal (which is generally called "teacher signal"), an error "E" is defined by the following equation 4. EQU E=0.5.SIGMA..sub.p .SIGMA..sub.k (t.sub.k -o.sub.k).sup.2 (4)
where .SIGMA..sub.p represents the sum relating to the pattern number of the teacher signal. The purpose of the learning operation is to determine a weighting coefficient which minimizes this error E. A change amount .DELTA.w.sub.ij of the weighting coefficient between multi input/output signal processing sections 2b is calculated based on the following equation 5. EQU .DELTA.w.sub.ij =-.epsilon..delta.E/.delta.w.sub.ij (5)
where .epsilon. represents a positive constant which is generally called the learning rate.
Error E can be reduced by repeating the renewal of the weighting coefficient based on the equation 5 in response to each entry of the learning pattern signal. When the error E becomes a small value enough to judge that the output signal is almost equalized with the desirable value, the learning operation is terminated.
By using such a weighting coefficient learning method, it becomes possible to set optimal weight coefficients capable of letting the highest-layer multi input/output signal processing section 2b corresponding to each category always generates the maximum output when the input pattern signal involves each category in the category group. Accordingly, it becomes possible to recognize the category of the input pattern signal in each category group, i.e. in each fine classification section, in accordance with the selecting operation of the maximum value selecting section 2c which identifies a specific highest-layer multi input/output signal processing section 2b generating the maximum output.
In the discriminating section 5, each similarity calculating sections 5a calculates a similarity of each category obtained in the fine classification section 2 based on the adaptation of the category group selected by group selecting section 3 and the output value of the fine classification section 2 corresponding to its category group, using the following equation 6. EQU (Similarity)=(Adaptation).sup.a .multidot.(Output value).sup.b(6)
where a and b are real constants.
Finally, category discriminating section 5b compares the resultant similarities of respective categories obtained from similarity calculating sections 5a, and finds out the category having the maximum similarity, thereby outputting a final discriminating result.
However, according to the conventional above-described arrangement, the learning operation in each fine classification section 2 is independently performed without considering the distance, i.e. group attribution factor, between the group reference pattern and the input pattern signal to be learned. Hence, there was a problem that the recognition accuracy would be undesirably deteriorated when the input pattern signal was positioned on the boundary of category groups. Furthermore, if a non-learned learning pattern is erroneously recognized or rejected nevertheless it's correctness, it is no longer impossible to cure or undo it.
Moreover, when the recognition is rejected, it was impossible to perform a reject processing with reference to the category groups or categories of the rejected data.

Recognition and judgement apparatus having various learning functions

Matsushita Electric Industrial Co., Ltd.


A non-linear optical device comprising a polymer configured to provide a grating holding ratio of 20% or higher after about four minutes, wherein the polymer comprises a first repeating unit comprising a first moiety having formula (M-1) and a second repeating unit comprising a second moiety having formula (M-2), as defined herein.

1. Field of the Invention
This invention relates to a non-linear optical device comprising a polymer configured to having long grating holding ratio. More particularly, the polymer comprises at least one repeating unit that comprises a carbazole moiety and at least one repeating unit that comprises a tetraphenyl diaminobiphenyl moiety.
2. Description of the Related Art
Photorefractivity is a phenomenon in which the refractive index of a material can be altered by changing the electric field within the material, such as by laser beam irradiation. The change of the refractive index typically involves: (1) charge generation by laser irradiation, (2) charge transport, resulting in the separation of positive and negative charges, (3) trapping of one type of charge (charge delocalization), (4) formation of a non-uniform internal electric field (space-charge field) as a result of charge delocalization and (5) a refractive index change induced by the non-uniform electric field. Good photorefractive properties are typically observed in materials that combine good charge generation, charge transport or photoconductivity and electro-optical activity. Photorefractive materials have many promising applications, such as high-density optical data storage, dynamic holography, optical image processing, phase conjugated mirrors, optical computing, parallel optical logic, and pattern recognition. Particularly, long grating holding ratio can contribute significantly for high-density optical data storage or holographic display applications.
Originally, the photorefractive effect was found in a variety of inorganic electro-optical (EO) crystals, such as LiNbO3. In these materials, the mechanism of a refractive index modulation by the internal space-charge field is based on a linear electro-optical effect.
In 1990 and 1991, the first organic photorefractive crystal and polymeric photorefractive materials were discovered and reported. Such materials are disclosed, for example, in U.S. Pat. No. 5,064,264. Organic photorefractive materials offer many advantages over the original inorganic photorefractive crystals, such as large optical nonlinearities, low dielectric constants, low cost, lightweight, structural flexibility, and ease of device fabrication. Other important characteristics that may be desirable depending on the application include sufficiently long shelf life, optical quality, and thermal stability. These kinds of active organic polymers are emerging as key materials for advanced information and telecommunication technology.
In recent years, efforts have been made to enhance the properties of organic, and particularly polymeric, photorefractive materials. Various studies have been done to examine the selection and combination of the components that give rise to each of these features. The photoconductive capability is frequently provided by incorporating materials containing carbazole groups. Phenyl amine groups can also be used for the charge transport part of the material.
Non-linear optical ability is generally provided by including chromophore compounds, such as an azo-type dye that can absorb photon radiation. The chromophore may also provide adequate charge generation. Alternatively, a material known as a sensitizer may be added to provide or boost the mobile charge for photorefractivity to occur.
The photorefractive composition may be made by mixing molecular components that provide desirable individual properties into a host polymer matrix. However, most of previously prepared compositions failed to show good photorefractivity performances, (e.g., high diffraction efficiency, fast response time and long-term stability). Efforts have been made, therefore, to provide compositions which show high diffraction efficiency, fast response time and long stability.
U.S. Pat. Nos. 6,653,421 B1 and 6,610,809 B1 disclose (meth)acrylate-based polymers and copolymer based materials which showed high diffraction efficiency, fast response time, and long-term phase stability. The materials show fast response times of less than 30 msec and diffraction efficiency of higher than 50%, along with no phase separation for at least two or three months.
None of the materials described above achieves the desired combination of high diffraction efficiency with a fast response time and long-term stability, along with long grating holding ratio. A material with long grating holding ratio possesses the ability to exhibit grating signal behavior after several minutes of irradiation. Optical devices with these properties are useful for various applications, such as data or image storage. Thus, there remains a need for optical devices comprising materials that combine good photorefractivity performances with long grating holding ratio.

Non-linear optical device with long grating persistency


In an optical deflector including a mirror, a movable frame supporting the mirror, a first piezoelectric actuator for rocking the mirror with respect to a first axis of the mirror, a support body supporting the movable frame, and a second piezoelectric actuator for rocking the mirror through the movable frame with respect to a second axis of the mirror, at least one piezoelectric sensor is provided for sensing rocking vibrations of the mirror caused by the first and second piezoelectric actuators. The second piezoelectric actuator includes a pair of meander-type piezoelectric actuators opposite to each other with respect to the first axis. Each of the second meander-type piezoelectric actuators includes a plurality of piezoelectric cantilevers folded at every cantilever and connected from the support body to the movable frame in parallel with the first axis. The piezoelectric sensor is incorporated into an outermost one of the piezoelectric cantilevers.

1. Field
The presently disclosed subject matter relates to an optical deflector including sense elements (piezoelectric sensors).
2. Description of the Related Art
A prior art two-dimensional optical deflector is constructed by a mirror, a movable frame surrounding the mirror for supporting the mirror, a pair of meander-type inner piezoelectric actuators fixed between the movable frame and the mirror and serving as cantilevers for rocking the mirror with respect to an X-axis of the mirror, a support body surrounding the movable frame, and a pair of meander-type outer piezoelectric actuators fixed between the support body and the movable frame and serving as cantilevers for rocking the mirror through the movable frame with respect to a Y-axis of the mirror perpendicular to the X-axis (see: U.S. Patent Application Publication No. 2011/0292479A1 & JP2010-122480A).
Generally, in an optical scanner, the mirror is rocked with respect to the X-axis for a horizontal deflection at a high frequency, while the mirror is rocked with respect to the Y-axis for a vertical deflection at a low frequency.
In the described prior art two-dimensional optical deflector, each of the piezoelectric actuators includes a drive element and a monitor (sense) element separated from each other by a separation groove. Therefore, when the piezoelectric actuators are driven by their drive elements, the flexing amounts of the piezoelectric actuators are sensed by their sense elements. As a result, the actual flexing amounts of the piezoelectric actuators are controlled by the feedback of the output signals of the sense elements in such a way that the amplitudes of the output signals of the sense elements are brought close to predetermined values. Thus, the deflection of the optical deflector can be controlled with high accuracy.
In the above-described prior art two-dimensional optical deflector, however, since the sense elements are provided in the entire piezoelectric actuators, the provision area of the drive elements in the piezoelectric actuators is decreased so that the rocking forces of the piezoelectric actuators are weakened, thus decreasing the deflection angles of the optical deflector. Also, since long wiring lines are required to be connected to the drive elements and the sense elements, the resistance of the wiring lines is increased. Further, since the two-dimensional optical deflector is conventionally manufactured by the micro electro mechanical system (MEMS) technology, the two-dimensional optical deflector is so fined so that the width of the drive elements and the width of the sense elements are very small, i.e., several hundreds of μm, and also, the spacing between the drive elements and the sense elements is very small. Therefore, the high frequency sense signals from the sense elements cannot be detected due to their crosstalk. As a result, it is impossible to accurately control the actual flexing amounts of the piezoelectric actuators by the feedback of the output signals of the sense elements.

Optical deflector including piezoelectric sensor incorporated into outermost piezoelectric cantilever


A set of candidate malicious activity identification models are trained and evaluated against a production malicious activity identification model to identify a best performing model. If the best performing model is one of the candidate models, then an alert threshold is dynamically set for the best performing model, for each of a plurality of different urgency levels. A reset threshold, for each urgency level, is also dynamically set for the best performing model.

Computing systems are currently in wide use. Some computing systems include data centers or hosted services. Such systems can be the target of malicious activity. Also, such systems often have new features or functionality being added to them, so that the malicious activity may be targeted at those features or functions as well.
In order to detect malicious activity, machine learning models, that model normal and malicious activity, are often trained. Activity on a monitored computing system is then detected and the model is used to identify whether the activity is normal or possibly malicious. The output of the model may indicate whether activity is normal or malicious, and it may include a confidence score that indicates the system's confidence in the identification of the activity as being normal or malicious.
Some monitoring systems also have different levels of urgency associated with suspected malicious activity. For example, an on-call engineer or other alert responder may be identified using a paging system or another communication system when suspected activity is detected, and when the confidence score is at a relatively high level. However, when the confidence score is at a lower level, but still a high enough level to warrant an alert, the alert responder may be notified using a different alert channel, such as electronic mail or another less immediate channel. Confidence score thresholds are set for the model being used, in order to identify the level of urgency for a given alert.
In some current systems, models are promoted to the production monitoring system with a manually set threshold for the different urgency levels. The model performance is then monitored to determine whether it is sending too many false positive alerts (when the model predicts that benign activity is actually malicious), or whether the model outputting too many false negatives (when the model predicts that malicious activity is benign). These model outputs are manually observed and the confidence score thresholds are iteratively set, manually, until the model is performing as desired.
In addition, the monitored systems are often changing. The malicious activity patterns are often changing as well. Therefore, new models are trained and promoted to production in the monitoring system quite often.
The discussion above is merely provided for general background information and is not intended to be used as an aid in determining the scope of the claimed subject matter.

Security model training and threshold selection


A method of manufacturing a semiconductor device by using atomic layer deposition includes depositing a silicon atomic layer film on a semiconductor substrate. The method may also include forming an epitaxial silicon film on the silicon atomic layer film by using the silicon atomic layer film as a seed layer.

1. Field of the Invention
The present invention relates generally to a semiconductor device and a method of manufacturing the semiconductor device and, more particularly, to a semiconductor device and a method of manufacturing the same using atomic layer deposition.
A claim of priority is made to Korean Patent Application No. 10-2005-0043476 filed on May 24, 2005, the disclosure of which is incorporated hereby by reference in its entirety.
2. Description of the Related Art
Advancement in electronic devices such as, for example, computers, has lead to significant developments in the field of semiconductor components used in these devices. One major requirement of semiconductor components is the need to store large amounts of data in small storage areas. Furthermore, due to advancements in the field of computing technology, semiconductor components are required to have higher processing speeds than before.
Accordingly, as the size of semiconductor devices is continuously reduced and the processing speed of semiconductor devices is increased, there have been advances in the technology for forming a multi-layer semiconductor structure in a limited size. Some of the advances include changes in the semiconductor fabrication process, such as, for example, a "double layer" process for connecting a plurality of metal layers via contact, and a "deposited transistor process" for forming two or more transistors on the same vertical line of a semiconductor substrate in a vertical structure.
Furthermore, as part of the deposited transistor process, an epitaxial process may be used for forming a trench type of element separation film, a contact between a source and a drain region, and for forming an S-RAM. The word "Epitaxial" includes two words—"Epi" and "Taxial" which means "along the axis of a crystal". Accordingly, the epitaxial process includes growing a directional single crystal film on the upper surface of a semiconductor substrate. Generally, a single crystal silicone may be used to form a single crystal silicone film on the semiconductor substrate. Therefore, the epitaxial process may be used for forming a high-purity crystal layer on a semiconductor substrate. The epitaxial process may be widely used in the semiconductor device manufacturing because it may be used to grow the crystal layer at a lower temperature than that of a wafer.
The epitaxial process may be divided into three sub processes. These sub processes may include a Vapor Phase Epitaxy (VPE) process, a Liquid Phase Epitaxy (LPE) process, and a Molecular Beam Epitaxy (MBE) process. The VPE process may be used for growing a crystal using process gas. The LPE process may be used for growing the crystal by making a saturated solution in which a crystal material is melted, namely, a molten liquid, come in contact with the semiconductor substrate. The MBE process may be used for growing the crystal by enabling a crystal material vaporized in an ultra high vacuum reaction tube below 10˜9 torr to reach the upper part of the semiconductor substrate while forming a molecular or atomic beam to react with the substrate surface.
A selective Epitaxial Growth (SEG) method is a process for growing a silicon film into a single crystal film, but only in a selected part of the semiconductor substrate. In order to obtain selective growth, the SEG process may include dividing a region to grow a silicon crystal prior to actually growing the crystal. The division may be achieved by dividing the region on the basis of whether the silicon crystal can or cannot be grown on a surface of that region. For example, the region for growing an epitaxial film exposes the semiconductor substrate formed with a silicone by removing a film such as silicon oxide through the photolithography and the etching process. The part in which the silicon substrate is selectively exposed so as to grow the epitaxial film through the etching process is referred to as a seed window.
FIGS. 1A to 1C illustrate a prior art method for manufacturing a semiconductor device in a single stack layer using the SEG process.
Referring to FIG. 1A, a gate region 14 provided with a sidewall space 16 may be formed on a P-type semiconductor substrate 10. An active region and a field region of the P-type semiconductor substrate 10 may be defined by a trench element separation film 12. Furthermore, though it may not be illustrated, an impurity diffusion area which functions as a source/drain region may be formed by performing an ion implantation of a pentavalent impurity in a lower part of the gate region 14.
In addition, an inter-layer insulation film may be formed by sequentially depositing an oxide film 20 such as a silicon nitride film (SiN) 18 and a HTO. The inter-layer insulation film may function as a buffer film at a thickness of, for example, 200 and 600 Å, on a front upper part of the semiconductor substrate 10 on which the gate region 14 is formed. In addition, a seed window 22 may be formed by exposing an impurity diffusion region (not shown) which functions as a source/drain region, by using a photolithography process. Furthermore, the same single crystal silicon film as the semiconductor substrate 10, i.e., a selective epitaxial film 24, is grown inside of the seed window 22 by performing the SEG process on the semiconductor substrate 10 that includes the seed window 22. At this time, the selective epitaxial film 24 may be grown in a temperature range of 700˜750° C. and a pressure range of 5˜200 Torr.
Referring to FIG. 1B, an amorphous silicon film may be deposited at a width of about 250 Å in front of the semiconductor substrate 10 on which the selective epitaxial film 24 is grown. Furthermore, a channel silicon pattern 26 may be formed by performing the photolithography process on the amorphous silicon film.
The channel silicon pattern 26 is a region on which a gate region of an upper transistor to be formed on the same vertical line of a lower transistor is formed. In addition, the gate region 14 is a gate region applied to the lower transistor in an aspect of the single stack layer structure.
Referring to FIG. 1C, an annealing process is performed on the semiconductor substrate 10 on which the channel silicon pattern 26 formed. As a result of the annealing process, the amorphous silicon film forming the channel silicon pattern 26 is converted into the same single crystal silicon film 26a as the selective epitaxial film 24. This forming of the channel silicon pattern 26 may be accomplished by enabling the selective epitaxial film 24 to be operated as a seed.
An upper transistor may be formed in a structure of a single stack layer. The upper transistor may be formed by forming a gate region 28 provided with a sidewall spacer 30 on the single crystal silicon film 26a and an impurity diffusion region (not shown). The impurity diffusion region may function as a source/drain region. At this time, the upper transistor is limited and formed to a channel silicon pattern formed with the single crystal silicon film 26a.
While the semiconductor device manufacturing method of FIGS. 1A to 1C may be used for manufacturing a semiconductor device in a structure of a single stack layer, the method has several shortcomings. For example, the method requires a large amount of time for growing the selective epitaxial film 24.
In addition, a growth speed at which the selective epitaxial film is converted may depend on the types of contacted material layers. For example, when a silicon epitaxial film is grown at an interface between a silicon film, a silicon nitride film, and an oxide film, the growth speed of the silicon epitaxial film is the highest at the interface which is in contact with the silicon film.
Referring to FIG. 1A, three types of material films may be exposed through the seed window 22 for exposing the semiconductor substrate 10. Specifically, a silicon film (A) forming the semiconductor substrate 10, a silicon nitride film (B) and an oxide film (C) for forming inter-layer insulation films are exposed. Accordingly, when the epitaxial process is performed on the seed window 22 on which the three material films are exposed, the silicon growth speed and crystal growth direction of the silicon epitaxial film which is grown at a region in contact with the silicon film (A) and the silicon growth speed and crystal growth direction of the silicon epitaxial film which is grown at a region in contact with the silicon nitride film (B) and the oxide film (C) are different from each other. Because of the difference between the silicon growth speed and crystal growth direction of the silicon epitaxial films, the selective epitaxial film 24 using a silicon film as a seed may be only grown inside of the seed window 22.
Accordingly, a growth rate of the epitaxial film may decrease leading to larger manufacturing times for semiconductor wafers. Furthermore, due to a reduction in the degree of integration, the manufacturing time loss may increase in a structure of a double stack layer in which three or more layers of transistors are deposited on the same vertical line as the semiconductor substrate.
In addition, the structure of the above-described single stack layer may form a channel silicon pattern so as to be arranged on the selective epitaxial layer 24. However, the seed window 22 for growing the selective epitaxial film 24 may be not formed in an accurate position. When the position of the seed window 22 is not accurate, a channel silicon pattern formed on an upper part of the seed window 22 may be not formed in an accurate position. Accordingly, as illustrated by reference numeral D in FIG. 1C, a node contact (not shown) may be shorted with the gate regions 14 and 16, thereby decreasing the reliability and yield of the semiconductor device.
The present disclosure is directed towards overcoming one or more of the problems associated with the prior art semiconductor manufacturing method.

Semiconductor device and method of manufacturing the same by using atomic layer deposition


Equipment and process for fluid purification and recovery for separating at least two matters contained in a gas or fluid including cooling a fluid to a low temperature range by use of a cooling system so that the matters in the fluid exhibit at least two phases, and filtering at least one of the matters using a filter device. The fluid may be distilled using a heating system prior to its entrance into the cooling system so as to help separate and purify the matters.

1. Field of the Invention
The present invention relates generally to a process for fluid recovery, and more particularly to a process in which filtration and purification take place after matters in a fluid are caused to exhibit different phases by cooling.
The process of the present invention may be applied to the purification of various fluids such as gas and liquid. More particularly, the process is adapted for use in the recycling, purification and recovery of refrigerant in a refrigeration system.
2. Description of the Related Art
As is well known to those skilled in refrigeration systems, refrigerant is being recycled and reused in a refrigeration system, and the used refrigerant is repeatedly recovered and reprocessed so as to enhance its purity and hence its heat exchange capacity, which helps to keep the refrigeration system in good conditions.
The process of recovering refrigerants generally falls into two main types: the compressive type and the non-compressive type. In the former, the compressor serves as a driving element to compress or transport the refrigerant. In the latter, by means of the differences in temperature and pressure generated by a refrigeration unit on the refrigerant located in at least two regions of the refrigeration system, the refrigerant is returned via the filter to the recovery equipment. For the process of recovering refrigerant using the compressor, the lubricant in the equipment that has good solubility in refrigerant may easily dissolve in the refrigerant and be carried away in it. The compressor may be damaged due to loss of lubricant. For refrigerant recovery systems not using compressors, the lubricant may be carried by the refrigerant into the cooling tank of the recovery equipment, thus contaminating the recovered refrigerant. Besides, the lubricant will stick to the cooling unit in the cooling tank so that the heat transfer efficiency of the cooling unit drops, damaging the system. In addition, during the process of recovery, since the amount of refrigerant in the refrigeration system will gradually decrease, space occupied by gaseous refrigerant will gradually increase so that pressure drops. Consequently, the differences in temperature and pressure between the refrigerant in the recovery equipment and the refrigerant in the refrigeration system are reduced. In other words, the rate of refrigerant recovery will continue to drop to further lower the recovery efficiency.
In the related art, there has been taught a refrigerant recovering and purging system utilizing heating and evaporation, and filtration equipment with windows for purifying the refrigerant. Such prior art systems are all directed to use of filtration apparatus and evaporation to achieve purification of refrigerant. In U.S. Pat. No. 5,379,607, which describes a refrigerant recovery and recycling system in which the refrigerant is separated by distillation. Said patent also-teaches use of waste heat produced by the compressor to distill liquid refrigerant from liquid contaminants.
Although heating and evaporation may substantially separate the two matters in the fluid, the separation is not complete. Take refrigerant-as an example. While water and refrigerant may readily dissolve in each other, and refrigerant very readily attracts water molecules, water is also the greatest contaminating source of refrigerant. There will be some water moisture left in the vaporized refrigerant when using prior evaporation techniques.

Industrial Technology Research Institute


A fluid filled vibration damping device wherein a first and second mounting member are connected by a main rubber elastic body, a pressure receiving chamber partially formed by the rubber elastic body and an equilibrium chamber partially formed by a flexible film are formed on either side of a partition member supported by the second mounting member, an orifice passage is formed for permitting a fluid communication between the pressure receiving chamber and equilibrium chamber communicate both having a non-compressible fluid; and a movable rubber plate is housed in a housing space so that minute pressure fluctuations in the pressure receiving chamber can be absorbed by the equilibrium chamber by means of the movable rubber plate. The movable rubber plate includes at least partially a corrugated part expanding generally a form of a corrugated panel by means of continuous depressions and protrusions.

1. Field of the Invention
The present invention relates to a vibration damping device applicable as an engine mount for use in an automotive vehicle, for example, and in particular to a fluid filled vibration damping device in which damping effects are obtained based on flow action of a non-compressible fluid sealed in the interior.
2. Description of the Related Art
A fluid filled vibration damping is known as one type of damping connectors or damping supports mounted between members forming a vibration transmission system. JP-Y-4-33478 shows one example of the fluid filled vibration damping device. This type of damping device typically includes: a first and a second mounting member elastically connected together by a rubber elastic body; a pressure receiving chamber in which part of the wall is composed of the rubber elastic body; an equilibrium chamber in which part of the wall is composed of a readily deformable flexible film; an non-compressible fluid being sealed in the pressure receiving chamber and equilibrium chamber. Damping effects are brought about based on the resonance action of the fluid flowing through the orifice passage that is formed so as to connect the pressure receiving chamber and equilibrium chamber to each other, as a result of the relative change in pressure between the pressure receiving and equilibrium chambers when vibrations are input between the first and second mounting members.
Damping effects based on the resonance action of the non-compressible fluid flowing through the orifice passage are readily brought about only in a specific pre-tuned range of frequencies. A hydraulic absorption mechanism based on a movable panel has been proposed in order to improve damping performance by avoiding the development of extremely high dynamic spring, particularly during the input of vibrations in frequency ranges higher than the tuned frequency range of the orifice passage. In this hydraulic absorption mechanism, a housing space is generally formed in the partition member dividing the pressure receiving chamber and equilibrium chamber, and a movable panel is micro-displaceably disposed in the housing space. The housing space is formed via through holes in the pressure receiving chamber and equilibrium chamber, so that the pressure in the pressure receiving chamber is exerted on one side of the moveable panel, and the pressure in the equilibrium chamber is exerted on the other side.
The displacement of the movable panel due to differences in pressure between the pressure receiving chamber and the equilibrium chamber allows minute fluctuations in pressure in the pressure receiving chamber to escape into the equilibrium chamber during the input of high frequency vibrations. Because of the substantial vibration amplitude during the input of low frequency vibrations for which the orifice passage has been tuned, the movable panel comes into contact with and overlaps the inner surface of the housing space, effectively closing off the through holes. This prevents the absorption of pressure in the pressure receiving chamber by the hydraulic absorption mechanism, resulting in the effective production of relative pressure fluctuations between the pressure receiving chamber and equilibrium chamber, while also ensuring a sufficient flow of fluid through the orifice passage between the two chambers to bring about damping effects by the orifice passage.
However, during rapid pressure fluctuations in the pressure receiving chamber upon the input of vibrations of greater amplitude in this type of hydraulic absorption mechanism, the movable panel strikes the inner surface of the housing space. The impact of the movable panel striking the surface tends to result in noise and vibration. If used as an automobile engine mount, for example, the noise will sound disagreeable to the operator when the engine is cranked or while driving over bumps, detracting from the driving experience.
To address such problems, JP-Y-4-33478 proposed constructing a movable pane with a rubber elastic panel, and integrally forming a small protrusion in the form of a lip on the surface, so that the protrusion could absorb impact when struck. Although this type of small protrusion is effective against low energy strikes, it is not very effective during rapid and extensive pressure fluctuations in the pressure receiving chamber, and another way of dealing with this problem is needed.


A printing device includes: a motor; a rotary body driven by the motor to rotate; a movable blade driven by rotation of the rotary body to cut a printing tape; a gear mechanism provided on a power transmission path from the motor to the movable blade; a first detector outputting a first signal based on a rotated position of the rotary body; a second detector outputting a second signal based on the rotated position, and a controller performing positioning the rotary body to a predetermined reference rotated position. The positioning includes: starting rotating the rotary body in one direction on the basis of the first signal at the time of starting the positioning; halting the rotation in the one direction of the rotary body on the basis of the second signal; and rotating the rotary body in the opposite direction for a prescribed time period after the halting is completed.

Japanese Patent Application Publication No. 2015-85507 describes a tape printing device provided with a cutting mechanism for cutting tape after printing is completed, a common cutter motor for driving the cutting mechanism, and a gear mechanism for transmitting the drive force from the common cutter motor to the cutting mechanism. The cutting mechanism includes a common cam plate, a half-cutting mechanism, and a full-cutting mechanism. The common cutter motor generates a drive force and the gear mechanism transmits the generated drive force to the cam plate, thereby driving the cam plate to rotate. When the cam plate is rotated in one direction from a reference rotated position, the cam plate drives a movable blade of the half-cutting mechanism to pivot. When the cam plate is rotated in the opposite direction, the cam plate drives a movable blade of the full-cutting mechanism to pivot. Two peripheral edge cams are provided on the cam plate. Through a combination of detection values from two detection sensors that are displaced by these peripheral edge cams, the rotated position of the cam plate and the operating state of the cutting mechanism can be determined.

Printing device performing positioning of rotary body based on detection results from two detectors


A sensing apparatus for determining the pressure of a fluid includes first and second support members. The first and second support members are configured to define at least one sealed chamber. A flexible diaphragm is disposed between the first and second support members. The diaphragm includes first and second opposing surfaces. The first opposing surface is in fluid communication with a first fluid-flow circuit, and the second opposing surface is in fluid communication with a second fluid-flow circuit. A first electronic circuit is disposed within the at least one chamber and coupled to the diaphragm for sensing a first differential pressure associated with the first and second flow circuits. The first electronic circuit is configured to produce at least one electrical signal proportional to a magnitude of the first differential pressure.

When sensing pressure in aerospace or other commercial systems, it is often necessary to isolate the process fluid (e.g., fuel) from the electronic sensing elements on the pressure sensor. The usual practice for doing so consists of employing a thin corrugated metal barrier that covers a cavity that houses the pressure sensor electronic sensing elements. This cavity is then filled will inert oil and sealed, providing a means to couple the process-fluid pressure to the sensor, but at the same time isolating the sensor from the process fluid itself.
Process fluids can be chemically destructive to the sensing element or be conductive, which provides unwanted current leakage in the sensor elements. The described isolators introduce non-correctable errors that increase approximately to the diameter ratio to the third power as the diameter of the isolator is decreased. Additionally, the oil fill has limitations with temperature swing; most oil fills that work at higher temperatures are gels at cold temperatures. In addition, the oil fill presents an additional failure mechanism; if the oil leaks out of the sensor, the sensor can no longer measure pressure and fails.


A system comprises an engine including a plurality of cylinders. A first intake throttle is positioned upstream of a first set of cylinders of the plurality of cylinders. The first intake throttle provides air at a first flow rate to the first set of cylinders so as to produce a lean air/fuel mixture in the first set of cylinders. A second intake throttle is positioned upstream of a second set of cylinders included in the plurality of cylinders and in parallel of the first intake throttle. The second intake throttle provides air at a second flow rate to the second set of cylinders so as to produce a rich air/fuel mixture in the second set of cylinders.

Exhaust aftertreatment systems are used to receive and treat exhaust gas generated by IC engines. Exhaust gases produced by IC engines operating on fuels such as gasoline, diesel, liquefied petroleum gas (LPG), ethanol, natural gas and/or dual fuel variants include NOx gases, carbon monoxide (CO) and/or unburnt hydrocarbons which have to be neutralized before the exhaust gas is expelled into the environment. Aftertreatment systems employed for treating the exhaust gas produced by such IC engines operating under stoichiometric conditions often include a three-way catalyst configured to efficiently decompose NOx gases, CO and unburnt hydrocarbons included in the exhaust gas. However, engines that operate lean cannot effectively decompose NOx gases with a three-way catalyst. A selective catalytic reduction (SCR) device, typically in conjunction with a reductant (e.g., urea-water solution (UWS)) injection system is generally used to efficiently decompose NOx emissions in a lean environment.
Three-way catalysts are effective when the engine is operated within a narrow band of air to fuel (air/fuel) ratios near the stoichiometric point, such that the exhaust gas composition oscillates between rich (excess fuel) and lean (excess oxygen) conditions. Conversion efficiency falls very rapidly when the engine is operated outside of this band. Under lean engine operation, the exhaust gas contains excess oxygen, and the reduction of NOx is not favored. Under rich conditions, the excess fuel consumes all of the available oxygen prior to the catalyst, resulting in poor reduction of CO and unburned hydrocarbons and the formation of ammonia from NOx. From a fuel efficiency perspective, it is beneficial to operate the engine under lean conditions to minimize fuel consumption and maximize fuel efficiency. However, the limitation posed by the three-way catalyst for operating within the narrow air to fuel ratio prevents this from being a feasible option. UWS injection, in conjunction with SCR technology, is used in some lean engine configurations. However, UWS SCR technology adds significant cost and control challenges.

Reductant generation systems and methods


An optical fiber can include a polymer and a scintillation quencher. The optical fiber can be a member of a radiation sensor or radiation detecting system. The scintillation quencher can include a UV-absorber or a scintillation resistant material. In one embodiment, the radiation sensor includes a scintillator that is capable of generating a first radiation having a wavelength of at least about 420 nm; and a scintillation quencher is capable of absorbing a second radiation having a wavelength of less than about 420 nm. The optical fiber including a scintillation quencher provides for a method to detect neutrons in a radiation detecting system.

A radiation detector can include a plastic scintillator, such as alternating layers of wavelength shifting fibers and phosphorescent materials. The layers of phosphorescent material can be BC-704™-brand neutron sensing phosphorescent layers available from Saint-Gobain Crystals of Hiram, Ohio, USA. Conventional neutron detection using solid-state scintillators typically rely on the optical coupling of a neutron-sensing scintillator material composite to a flat window of a photosensor. The industry demands further improvements of neutron detection in view of these detriments.
Skilled artisans appreciate that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve understanding of embodiments of the invention.

Optical fiber having scintillation quencher, a radiation sensor and a radiation detection apparatus including the optical fiber and a method of making and using the same


There is provided a dissolvable film polymer matrix that includes a plurality of magnetically responsive kertin-like fibers for application to an individual's face or head. The dissolvable film polymer matrix product includes hairs that are magnetically oriented in a non-random plain to be applied on an individuals face or head to simulate the appearance of the individual's natural hair. Methods of manufacturing and applying the dissolvable polymer matrix product are also disclosed.

The eyebrow is an area of thick, delicate hairs above the eye that typically follows the shape of the lower margin of the brow ridges. The main function of eyebrows is to protect the eye, but they are also important to human communication and facial expression. Furthermore, it is not uncommon for people to modify their eyebrows by means of hair addition or removal, and/or to enhance the appearance of their eyebrows with make up.
As people age, often their eyebrows become thinner or fall out. In addition, people who tweeze their eyebrows sometimes lose the ability to regrow the brows to the full extent of their original form or shape. Often, regrown eyebrows may be uneven or sparse.
Furthermore, as people age, they often experience the loss of small patches of hair on their heads and/or faces. Men with beards also often experience the loss of small patches of hair that might appear unsightly or unattractive.
Oftentimes a person experiencing loss of eyebrows or hair in their beards will use a make-up brow pencil or brow powder to fill in uneven areas or the areas lacking hair so as to create a more uniform appearance with the surrounding hairs. The less hair an individual has on the brow line the more unnatural the look will be using the pencils or powders.
There is a need in the art for compositions and methods for applying keratin-like fibers to an individual's eyebrows or face to create a more natural appearance than brow pencils or powder.
It is an object of the invention to provide keratin-like fibers that are oriented in a non-random manner such that the fibers preferably blend with existing hair and simulate the appearance of the existing hair when applied to an existing area of hair, etc. including areas lacking hair.


A method for controlling wheel slip comprising determining an actual wheel slip of a set of driven wheels on a vehicle, adjusting the actual wheel slip for cornering distortion, setting a target slip condition using a traction control unit with a multi-position switch depending upon road conditions, calculating overslip of the wheels, and retarding an engine output to minimize overslip, and an apparatus for accomplishing same.

The present invention relates generally to vehicle control systems, and more particularly to a traction control system that maximizes wheel traction and vehicle stability by limiting engine output based on driven versus undriven wheel speeds.
Traction control refers the process of controlling a vehicle's wheel rotation or spin under certain conditions. When a force is applied to a tire, it produces a frictional force from the interaction of the tire and road surface. Of interest is the longitudinal force on the driven wheels that is used to accelerate the vehicle, and the tire force from torque generated from the engine. A tire cannot produce a frictional force to accelerate the vehicle without any wheel torque, so the frictional force can be expressed as a ratio of the wheel torque to frictional force, often called the coefficient of friction.
Traction control has traditionally been a safety feature in premium high-performance cars, which otherwise need sensitive throttle input to prevent driven wheels from spinning when accelerating, especially in wet, icy or snowy conditions. In recent years, traction control systems have become widely available in non-performance cars, minivans, and light trucks. In race cars, traction control is used as a performance enhancement, allowing maximum traction under acceleration without wheel spin. When accelerating out of a turn, it keeps the tires at optimal slip ratio to maximize speed out of a turn. Traction control can also help a driver to corner more safely. If too much throttle is applied during cornering, the drive wheels will lose traction and slide sideways. This occurs as understeer in front wheel drive vehicles and oversteer in rear wheel drive vehicles. Traction control can prevent this from happening by limiting power to the wheels.
A driven tire has a slip ratio, which is the wheel speed divided by the actual speed of the vehicle. One can also measure the slip ratio as a percentage (e.g., a slip percentage of 10% means that the tire is moving 10% faster than the road surface). However, the slip ratio is not the same as wheel spin. When torque is applied to a tire, the tire distorts and the tire surface tends to 'creep' along the road without actually slipping, so a wheel can be moving faster than the road without any wheel spin. In practice, street tires give 1-3% wheel slip (without wheel spin) under moderate acceleration, and drag tires have much more wheel slip, depending on construction.
A tire's coefficient of friction depends on many factors, such as tire construction, road surface, tire loading, temperature, moisture, etc, but it generally increases with increasing wheel slip, up to a point, and then decreases. FIG. 1 illustrates a graph of coefficient of friction vs. wheel slip for a typical tire in dry conditions, with an optimum wheel slip of around 6-7%. In wet conditions, the optimum wheel slip tends is be much lower. For optimal acceleration, if one wishes to maximize the tire coefficient of friction, one needs to keep the wheel slip at the point of tire maximum coefficient of friction. The present invention is a system for accomplishing this objective.
There are various commercial systems that address the traction control in vehicles. Examples of traction control can be found at:    http://www.racelogic.co.uk/index.php/en/other-products/traction-control    http://www.motec.com.au/m800/m800overview/    http://www.aemelectronics.com/engine-management-systems-9/However, each of these existing systems have a drawback in that a) they do not work as an aftermarket product that can operate with an existing engine computer, thus requiring a complete replacement of the existing engine computer at significant expense, or b) are not integrated into the engine computer control logic and so they cannot perform operations integral to the engine computer (for example, retarding ignition to reduce engine output).
The present invention overcomes the shortcomings of these existing systems and provides a robust and efficient traction control system that maximizes acceleration


The objective of the present invention is to provide a combustion device capable of informing an amount of used gas, in which an air of gas temperature is reflected, to a user and a method of measuring the amount of used gas. To this end, the combustion device includes: a burner configured to burn gas; a blower configured to supply air for combustion to the burner; gas valves configured to supply gas for combustion to the burner; a gas temperature sensor configured to measure a temperature of gas supplied to the burner or the blower; and a control unit configured to control the number of revolutions of the blower, calculate a first amount of used gas for a present operating heat quantity burned according to a signal input by a user, and compensate the calculated first amount of used gas with a measured gas temperature measured by the gas temperature sensor to calculate a second amount of used gas.

Generally, a combustion device such as a gas boiler burns gas to generate heat to perform heating or supply hot water.
The combustion device may be divided into an electronic proportional control system and a pneumatic system according to a method of mixing air and gas.
Referring to FIG. 1, a combustion device 10 of an electronic proportional control system is a system in which air supplied by a blower 13 and gas supplied by an electronic proportional control valve 15 are individually supplied to a burner 12, and the air and the gas are mixed and burned in the burner 12. In such a system, a feed rate of gas is changed according to a current value of the electronic proportional control valve 15 configured to control a supply of gas. Accordingly, a quantity of heat and an amount of gas used in the system are determined by the electronic proportional control valve 15. Undefined numbers "11," "14," and "16" respectively denote a heat exchanger, a gas valve for controlling the supply of gas, and a gas supply pipe.
Referring to FIG. 2, a combustion device 20 of the pneumatic system is a system in which air supplied by a blower 23 and gas supplied by a pneumatic gas valve 24 are mixed in advance and supplied to the burner 22, and the air and the gas mixed in advance are burned in the burner 22. The pneumatic gas valve 24, which is provided on a gas supply pipe 26 through which gas is supplied, changes a feed rate of gas according to a pressure of the air supplied by the blower 23. Accordingly, a quantity of heat and an amount of gas used in such a system are determined by the number of revolutions of the blower. An undefined number "21" denotes a heat exchanger.
A related art configured to inform a user of an amount of used gas while a combustion device operates is disclosed in Korean Patent No. 10-1043894.
In the related art, the number of revolutions and a current value of a blower and a current value of a proportional valve are detected to calculate an amount of consumed gas.
Real amounts of used air and gas may be changed according to a temperature. That is, in the case in which a temperature is high, since volumes of air and gas increase, the numbers of particles of the air and the gas per unit volume decrease, and thus a real amount of used gas decreases. In addition, in the case in which a temperature is low, since volumes of air and gas decrease, the numbers of particles of the air and the gas per unit volume increase, and thus a real amount of used gas increases.
In the related art, since only the amount of used gas, in which temperatures of air and gas are not reflected, is calculated, there is a problem in that an accurate real amount of used gas may not be informed to a user. In addition, there is a problem in that information of various amounts of used gas according to operation modes may not be informed to a user.

Combustion device capable of measuring gas use amount, and method for measuring gas use amount


A display device fabricating apparatus includes a radio frequency generator and a vacuum chamber. A first electrode and a second electrode that receive power from the radio frequency generator form a plasma using a gas inside the vacuum chamber. A power supply line supplies power to the first electrode from the radio frequency generator. A refrigerating part uses a refrigerant other than air in order to remove the heat generated from the power supply line. The refrigerant is circulated through a system that cools the refrigerant below the ambient external temperature before the refrigerant is used to cool the power supply line and re-cool or re-liquefy the refrigerant that has been heated by the power supply line.

1. Field of the Invention
The present invention relates to a method and apparatus of fabricating a display device, and more particularly to a method and apparatus of fabricating a display device that is adaptive for minimizing power loss.
2. Description of the Related Art
Generally, a liquid crystal display device controls the light transmissivity of liquid crystal by using an electric field, thereby displaying a picture. For this, the liquid crystal display device includes a liquid crystal display panel where liquid crystal cells are arranged in a matrix, and a driving circuit to drive the liquid crystal display panel. The liquid crystal display panel includes pixel electrodes and a common electrode to apply the electric field to each of the liquid crystal cells. Generally, the pixel electrode is formed on a lower substrate by liquid crystal cells, but the common electrode is formed to be integrated with the entire surface of an upper substrate. Each of the pixel electrodes is connected to a thin film transistor TFT which is used as a switching device. The pixel electrode along with the common electrode drives the liquid crystal cell in accordance with data signals supplied through the thin film transistor.
The lower substrate of the liquid crystal display requires a plurality of mask processes as well as a semiconductor process, thus its fabrication process is complicated and becomes one of the major causes of increase in the manufacturing cost of the liquid crystal display panel. Thus, reducing the number of mask processes in fabricating the lower substrate has become the subject of recent interest. Specifically, as one of the mask processes includes several (in fact, 5) processes such as a deposition process, a cleaning process, photolithography, an etching process, an exfoliation process and an inspection process, reducing the 5-mask process to a 4-mask process has become of interest.
FIGS. 1 and 2 are a plan view and a sectional diagram representing a lower substrate formed in a 4-mask process.
Referring to FIGS. 1 and 2, a lower substrate 1 of a liquid crystal display device includes a thin film transistor TFT (TP) located at an intersection of a data line 4 and a gate line 2, and a pixel electrode 22 connected to a drain electrode 10 of the TFT (TP)
The TFT (TP) includes a gate electrode connected to the gate line 2, a source electrode 8 connected to the data line 4, and a drain electrode 10 connected to the pixel electrode 22 through a drain contact hole 20. Also, the TFT (TP) further includes semiconductor layers 14, 16 to form a conductive channel between the source electrode 8 and the drain electrode 10 by a gate signal supplied to the gate electrode 6. The TFT (TP) selectively supplies a data signal from the data line 4 to the pixel electrode 22 in response to the gate signal from the gate line 2.
The pixel electrode 22 is formed of a transparent conductive material of which light transmissivity is high, and is located at a cell area which is divided by the data line 4 and the gate line 2. The pixel electrode 22 is formed on a protective layer 18 that is spread on the entire surface of the substrate 1, and is electrically connected to the drain electrode 10 through the drain contact hole 20 that runs through the protective layer 18. The pixel electrode 22 generates a potential difference with a common transparent electrode (not shown) formed on an upper substrate (not shown) by the data signal supplied via the TFT (TP). The potential difference causes liquid crystal to be rotated due to dielectric constant anisotropy. The liquid crystal is located between the lower substrate 1 and the upper substrate (not shown). The rotating liquid crystal in this way transmits the light incident from a light source (not shown) via the pixel electrode 22 to the upper substrate.
The fabricating method of the lower substrate of the liquid crystal display device is described as follows in conjunction with FIG. 3A to 3D.
Referring to FIG. 3A, a gate pattern including the gate electrode (6) and a gate line (2) is formed on the lower substrate 1.
For this, a gate metal layer is deposited by a deposition method such as sputtering. The gate metal layer is formed of aluminum Al or aluminum alloy. The gate metal layer is patterned by photolithography using a first mask and an etching process to form the gate electrode 6 and the gate line 2 on the lower substrate 1.
Referring to FIG. 3B, a data pattern is formed on the lower substrate 1 where a gate pattern has been formed. The data pattern includes a gate insulating film 12, an active layer 14, an ohmic contact layer 16, a source electrode 8, a drain electrode 10 and a data line 4.
For this, the gate insulating film 12, first and second semiconductor layers and a data metal layer are sequentially deposited on the lower substrate 1 by a deposition method such as chemical vapor deposition and sputtering. The gate insulating film 12 is formed of inorganic material such as silicon oxide SiOx or silicon nitride SiNx, the first semiconductor layer is formed of amorphous silicon that is not intentionally doped with impurities, the second semiconductor layer is formed of amorphous silicon that is doped with n-type or p-type impurities, and the data metal layer is formed of molybdenum Mo or molybdenum alloy.
A photo resist pattern is formed on the data metal layer by photolithography using a second mask. In this case, the second mask is a diffractive mask having a diffraction part, and the diffractive mask is used at a channel part of the TFT (TP), thus the photo resist pattern of the channel part is relatively lower in height than a source/drain part.
The data metal layer is patterned by a wet etching process using the photo resist pattern, thereby forming the data pattern including the data line 4, a storage electrode (not shown), the source electrode 8 and the drain electrode 10.
Then, the first and second semiconductor layers are simultaneously patterned by a dry etching process using the same photo resist pattern to form an active layer 14 and an ohmic contact layer 16.
And, after removing the photo resist pattern that is relatively lower in height at the channel part by an ashing process, the data metal layer and ohmic contact layer of the channel part are etched by the dry etching process. Accordingly, the active layer of the channel part is exposed to separate the source electrode from the drain electrode.
Then, the photo resist left on the data metal layer is removed by a stripping process.
Referring to FIG. 3C, a protective film 18 is formed on the gate insulating film 12 where the data pattern has been formed.
For this, an insulating material is deposited on the gate insulating film 12 to form the protective film 18. The protective film 18 is formed of inorganic insulating material such as silicon nitride SiNx and silicon oxide SiOx, or organic insulating material such as acrylic organic compound, benzocyclobutene BCB and perflurocyclobutane PFCB. Subsequently, the protective film 18 is patterned by a photolithography using a third mask and the etching process to form a drain contact hole 20. The drain contact hole 20 runs through the protective film 18 to form the drain electrode 10 exposed.
Referring to FIG. 3D, the pixel electrode 22 is formed on the protective film 18.
For this, a transparent metal layer is formed on the protective film 18 by a deposition method such as sputtering. The transparent metal layer is formed of indium tin oxide ITO, indium zinc oxide IZO and indium tin zinc oxide ITZO. Subsequently, the transparent metal layer is patterned by a photolithography using a fourth mask and the etching process to form the pixel electrode 22. The pixel electrode 22 is connected to the drain electrode 10 through the drain contact hole 20 that runs through the protective film 18.
In the known liquid crystal display pattern, the gate pattern and the contact hole formed on the protective film and the channel layer formed between the source and drain electrodes are patterned by the dry etching process. Such a dry etching process is performed by a dry etching apparatus, as shown in FIG. 4.
FIG. 4 is a diagram representing a known dry etching apparatus.
Referring to FIG. 4, the known dry etching apparatus includes a vacuum chamber 30 forming a closed space 90 therewithin to accommodate and etch an object, a plasma generator to receive voltage and generate a discharge voltage for making plasma in the closed space 90, a gas supplier 50 to provide etching gas into the vacuum chamber 30, and a cooling chamber to cool a conductor.
The vacuum chamber 30 includes a body part 40, and a cover part 32 combined with the body part 40 to form the closed space 90 where etching process is performed.
The body part 40 includes a side wall part 40a forming an outer wall of the vacuum chamber 30, and a bottom part 40b formed to be integrated with the side wall part 40a. A pumping line 44 is installed at part of the bottom part 40b. The pumping line 44 is connected to a pump (not shown) that controls the pressure of the closed space 90. Also, part of an electrode forming the plasma generator is located at the central area of the bottom part 40b.
The cover part 32 is formed to correspond to the upper end part of the body part 40 and is stuck to the body part 40 to be able to open and shut. It is desirable to have a sealing device so that the cover part 32 can prevent gas leakage from the closed space 90 after being assembled with the body part 40. Also, a chamber hole 56 is formed at the cover part 32 to supply plasma etching gas to the closed space 90.
The plasma generator includes a radio frequency generator 70 to generate AC power of high frequency, an RF match box 80 to supply to the vacuum chamber 30 the power generated from the radio frequency generator 70, a first electrode 34 and a second electrode 42 of plate shape to receive the generated power from the radio frequency generator 70 and generate an electric field for forming the plasma. The power generated from the radio frequency generator 70 is transmitted to the RF match box 80 through a first conductor 70a, and the power transmitted to the RF match box 80 is transmitted to a first electrode 34 through a second conductor 70b.
The radio frequency generator 70 generates a power with frequency of 13.56 MHz and capacity of 10 KW, so that reactive particles forming the plasma can oscillate in both directions, i.e. towards an anode electrode and a cathode electrode. The power is determined by a HF AC voltage and a HF AC current generated from the radio frequency generator 70.
The RF match box 80 squares the impedance of the inside of the vacuum chamber 30 with the impedance of the radio frequency generator 70, and equally sustains the phase of the HF AC voltage supplied from the radio frequency generator 70 and the phase of the AC voltage supplied to the vacuum chamber 30. That is, if the phase of the AC voltage generated from the radio frequency generator 70 does not match the phase of the AC voltage supplied to the vacuum chamber 30, dry etching does not occur, and the dry etching apparatus and the vacuum chamber 30 may be damaged by a sudden energy burst. In order to reduce these risks, the RF match box 80 is installed between the radio frequency generator 70 and the vacuum chamber 30.
The first electrode 34 has a plate shape and is installed at the cover part 32 and connected to the radio frequency generator 70.
The second electrode 42 has a plate shape and is located at the bottom part 40b to form a space for a glow discharge by keeping a designated gap with the first electrode 34. A supporting stand 46 is installed on the upper surface to hold a TFT lower substrate 48 which is to be etched.
The gas supplier 50 includes a gas supplying tube 52 that leads plasma etching gas to the vacuum chamber 30. The plasma etching gas is generated from a gas generator (not shown) that is installed at the outside of the vacuum chamber 30. A gas guide 54 combined with the gas supplying tube 52 and a chamber hole 56 are used to inject the etching gas supplied through the gas supplying tube 52 into the inside of the vacuum chamber 30.
The gas generator (not shown) has a closed space and generates the etching gas, by chemical reaction in the inside of the gas generator. The gas generator generates chlorine gas Cl2, hydrogen chloride HCl, Sulfur Hexafluoride SF6, Oxygen gas O2 and carbon tetrafluoride CF4in accordance with the object being etching.
The gas supplying tube 52 is a pipe that leads the etching gas generated in the gas generator to the vacuum chamber 30, and should be strongly corrosion resistant as the etching gas is poisonous. Also, the gas supplying tube 52 includes a member that prevents impurities from being added to the etching gas flowing into the inside of the dry etching apparatus.
The gas guide 54 transports the etching gas that flows through the gas supplying tube 52 into the vacuum chamber 30. The gas guide 54 should be resistant to corrosion because it too transmits the poisonous gas. The gas guide 54 additionally should have enough durability so that it can bear the pressure of the vacuum formed in the closed space 90. Also, as the gas guide 54 is combined with the chamber hole 56 for the etching gas to be injected into the chamber, it should have a good resistance to corrosion with regard to the plasma.
The cooling chamber 60 cools a second conductor 70b when supplying power to a first electrode 34 through the second conductor 70b after the power generated from the radio frequency generator 70 is transmitted to the RF match box 80 through a first conductor 70a. In other words, because the resistance of the second conductor 70b increases if a large amount of heat is generated in the second conductor 70b, the cooling chamber 60 cools the second conductor 70b and thereby permits the power to be transmitted with a decreased amount of loss. The cooling chamber 60 has a fan that provides air flow into the cooling chamber 60. The second conductor 70b is cooled by an air-cooling system using the fan.
In order to etch the TFT lower substrate 48 with an etching apparatus having such a configuration, firstly, the TFT lower substrate 48 in which the protective film has been deposited is located at the upper surface of the supporting stand 46, and then the pressure of the inside of the closed space 90 is decreased to 7.7 mtorr to 5.6 mtorr, a suitable pressure for forming plasma in when using the pump. A gas that can etch the TFT lower substrate 48 is then supplied through the gas guide 54.
Subsequently, when applying the AC voltage of 13.56 MHz through the radio frequency generator 70 between the first electrode 34 and the second electrode 42, free electrons inside the closed space 90 are accelerated by the electric field and collide with the etching gas molecules. Accordingly, the etching gas molecules gain energy, and then are divided into ions, electrons, radicals by going through an ionization decomposition process to form a plasma. The radicals diffuse and the ions or the electrons move along the direction of the applied electric field and physically or chemically react with the protective film of the TFT lower substrate 48 corresponding to an area in which a contact hole is to be formed, thereby etching the surface. The chemical reactant generated as an etching result is discharged to the outside along the pumping line 44 by the pump to maintain the pressure of the closed space 90.
After the power generated from the radio frequency generator 70 is transmitted to the RF match box 80 through the first conductor 70a, the cooling chamber 60 is used for removing the heat generated in the second conductor 70b to increase the power transmission when supplying the power to the first electrode 34. However, even with this air cooling, the operating temperature of the second conductor 70b is around 40° C., which is well above the ambient temperature. Accordingly, a large amount of the power transmitted to the first electrode 34 is lost from the voltage drop that takes place due to the increase of resistance of the second conductor 70b because the cooling chamber 60 cannot sufficiently cool the heat generated from the second conductor 70b.

Apparatus of fabricating a display device


An exemplary backlight module (3) includes a light guide plate (32) and a frame (34) accommodating the light guide plate. The light guide plate includes a main body including two side surfaces (321), and two sliding strips (325). The sliding strips extend outward from the side surfaces of the main body. Each sliding strip includes a flexible detent (326). The frame includes two opposite first walls (341). The first walls defines two sliding guides (3411) slidably receiving the light guide plate whereby the light guide plate is slidable into the frame and detachably fixed in the frame by snapping engagement of the flexible detents with the frame.

Liquid crystal displays are commonly used as displays for compact electronic apparatuses. This is because they not only provide good quality images with little power consumption, but they are also very thin. The liquid crystal in a liquid crystal display does not emit any light itself. The liquid crystal has to be lit by a light source so as to clearly and sharply display text and images. Thus, a backlight module is generally needed for a liquid crystal display.
Referring to FIG. 8, a typical liquid crystal display 8 includes a liquid crystal panel 80, and a backlight module 90 positioned for providing light beams to the liquid crystal panel 80.
The backlight module 90 includes an optical film assembly 91, a light guide plate (LGP) 92, a plurality of light emitting diodes (LEDs) 93, and a plastic frame 94. The light guide plate 92, the optical film assembly 91, and the liquid crystal panel 80 are arranged in that order from bottom to top. The plastic frame 94 is used to accommodate the liquid crystal panel 80, the optical film assembly 91, the light guide plate 92, and the LEDs 93.
The light guide plate 92 is generally rectangular, and includes a light incident surface 921, a top light emitting surface 922 perpendicularly adjoining the light incident surface 921, a bottom surface 923, and two opposite side surfaces 924. The side surfaces 924 perpendicularly connect with the light incident surface 921, the light emitting surface 922, and the bottom surface 923. Each side surface 924 includes a pair of first ears 927 and a second ear 928 extending perpendicularly outward therefrom. The first ears 927 are located at opposite ends of the side surface 924, respectively. The second ear 928 is located in a middle of the side surface 924.
Each of the first ears 927 is half as thick as a main body of the light guide plate 92, and has a top surface coplanar with the light emitting surface 922. The second ear 928 is half as thick as the main body of the light guide plate 92, and has a base surface coplanar with the bottom surface 923. The light guide plate 92 can be made from polycarbonate (PC) or polymethyl methacrylate (PMMA), and can be manufactured by an injection molding method.
The plastic frame 94 includes two opposite first side walls 941 and two opposite second side walls 942. The first side walls 941 and the second side walls 942 are alternately arranged end to end. The first side walls 941 are longer than the second side walls 942. Each first side wall 941 defines a pair of first notches 947 and a second notch 948. The first notches 947 are located at opposite ends of the first side wall 941 respectively, and correspond to respective first ears 927 of the light guide plate 92. The second notch 942 is located in a middle of the first side wall 942, and corresponds to a respective second ear 928 of the light guide plate 92. One of the second side walls 942 defines a plurality of recesses 9420 to receive the LEDs 93.
Referring also to FIG. 9, the first ears 927 are inserted into the first notches 947, respectively. The second ears 928 are inserted into the second notches 948, respectively. Thus, the light guide plate 92 is received in and supported by the plastic frame 94.
In the process of assembly of the backlight module 90, the first ears 927 and the second ears 928 are generally pressed into the first notches 947 and the second notches 948 by applying manual force. This may result in the plastic frame 94 being distorted or even being damaged. When this occurs, the mechanical stability and the performance of the backlight module 90 are liable to be impaired.
What is needed, therefore, is a backlight module that can overcome the above-described deficiencies. What is also needed is a liquid crystal display including the backlight module.

Backlight module having light guide plate with sliding strips and frame with sliding guides and liquid crystal display with same