A method and arrangement is disclosed for extending a resource search across a gateway node connecting a peer-to-peer network with a subarea network. An interface node is divided into a first section associated with the peer network and a second section associated with the subarea network. In response to a resource search request arriving at one of the sections from the network with which the section is associated, a directory of resources known by the respective section is first searched. If the resource is not found in the directory of the section, the search request is translated into a format compatible with the other network, and the translated search request is transmitted to the other section of the interface node. If the resource is not found among the resources known to the interface node, the resources known by the end nodes served by the interface node in the peer network are next searched. If the resource is not found within these end nodes, the resources known by each of the remaining network and end nodes in the peer network are next searched. If the resource is still not found, a search of the subarea nodes of the second network is initiated.

As network technology and topology evolve, some users have a need for the new architectures, while at the same time retaining their established networks for economic and other reasons. For example, some companies have extensive investments in subarea networks. Subarea networks are a mainstay of the System Network Architecture (SNA) and are described in detail in many publications and books, such as "SNA: IBM's Networking Solution", James Martin, Prentice- Hall, 1987. Subarea networks are characterized by a topology in which many subarea domains may be interconnected in many ways and in which a domain typically will comprise a hierarchically structured set of nodes. These nodes typically include a host node (a type 5 node in the SNA definition) controlling a tree of other nodes such as communication controllers (type 4 nodes), cluster controllers (type 2 nodes) and end units (type 2 or 1 nodes).
Many of the companies with present or future subarea networks may also direct some of their growth toward peer-to-peer networks (PPNs). PPNs are characterized by a topologically flat interconnection of network nodes, each of which serve a plurality of end nodes. One such PPN network is described in detail in U.S. Pat. No. 4,914,571, which issued on Apr. 3, 1990 to Baratz et al.
In many cases, there is a great need for companies to combine these architecturally different networks into a single logical network from the users point of view. Heretofore, success has been achieved in interfacing networks of like architecture. This has been accomplished, for example, by performing network name and address translation at interface nodes between the networks to avoid the problems of duplicate resource naming in the separate networks. The problem is generally discussed in Chapter 12 of the aforementioned book by Martin. U.S. Pat. No. 4,677,588, which issued to Benjamin et al on Jun. 30, 1987, discloses the details of a solution to the problem of duplicate resource names in combined networks. In view of the teaching of U.S. Pat. No. 4,677,588, searching of combined architecturally similar networks to locate a resource whose location is unknown to a requesting node presents no severe additional problems, because each of the individual networks are of similar architecture and the search algorithms in the networks are the same. However, when architecturally different networks are combined at an interface node, problems arise in the efficient location of resources in the combined network because of the different architectures and search algorithms. For example, if a search request for a resource that originates in the PPN side of a combined PPN/subarea network is merely broadcast into the subarea side from an interface node, all kinds of network havoc may occur. This may be caused in part by an uncontrolled massive search of all subareas and the attending large amount of resulting network traffic. The problem is exacerbated by the possibility of circuitous loops and other problems if multiple interface nodes interconnect the different physical networks or if multiple PPN and/or subarea networks are combined, rather than one of each. Similar problems can occur for a search originating from the subarea network into the PPN side.

Method of combining architecturally dissimilar computing networks into a single logical network


A method for manufacturing a golf club head having scorelines is disclosed herein. The method includes tumbling a raw cast golf club head in a tumbler containing a rough cut media. The tumbling occurs for at least six hours to create a tumbled golf cub head. The method also includes grinding the tumbled golf club head to clean a perimeter of the tumbled golf club head to create a ground golf club head. The method also includes polishing the ground golf club head to create a polished golf club head. The method also includes finishing the golf club head to create a finished golf club head.

1. Field of the Invention
The present invention relates to a method for manufacturing a golf club head with scorelines. More specifically, the present invention relates to method for manufacturing a golf club head with scorelines utilizing a tumbling process.
2. Description of the Related Art
The prior art discloses various methods to manufacture golf club heads, especially iron-type golf club heads. For example, Rogers, U.S. Pat. No. 4,027,885 for Golf Iron Manufacture, discloses scoring grooves into a face for the club head.
Taylor, U.S. Pat. No. 4,077,632 for a Lined Face For A Golf Club discloses grooves in compliance with the Rules of Golf at that time.
Moore, U.S. Pat. No. 4,558,505, for a Method of Making Weighted Metal Golf Club Head discloses at process for making an iron-type golf club head.
Shira, U.S. Pat. No. 4,768,787, for a Golf Club Including High Friction Striking Face discloses grit blasting the horizontal grooves to provide a friction generating surface when the striking surface of the golf club head engages a ball.
Stuff, U.S. Pat. No. 5,354,059, for Golf Club Heads With Means For Imparting Corrective Action, discloses a club head with at least two non-parallel sets of grooves.
Funk, U.S. Pat. No. 5,487,543, for a Shot Peened Golf Club Head, discloses shot peening the striking surface of a golf club head.
Mogan, U.S. Pat. No. 6,059,670, for a Golf Club Having A Head With A Hard Multilayer Striking Surface And Method For Making The Same, discloses manufacturing a club head by heat treatments, vacuum treatments, and roughening.
Doolen, U.S. Pat. No. 6,179,725, for a Golf Club Having Angular Grooves discloses grooves oriented at various angles.
Hirota, U.S. Pat. No. 6,193,615, for a Head Of Golf Clubs That Spins More, discloses a face having grooves that allow for pressure to act specially on the edges of the grooves to increase ball spin.
Vokey et al, U.S. Pat. No. 7,473,187, for Spin Milled Grooves For A Golf Club, discloses machining grooves into a face.
Hettinger et al., U.S. Pat. No. 7,452,283, for a Putterhead With Dual Milled Face Pattern, discloses milling grooves into a face of a putter.
Kennedy, III, U.S. Pat. No. 7,179,175, for a Golf Club Having Stepped Grooves, discloses a golf club head with V-shaped and U-shaped grooves.
Scoreline designs generally have a cross-section geometry that includes two edges, two side walls and a bottom. The side walls are at a predetermined angle from a vertical line. Usually, each wall has more than one section and those sections are straight or curved. Alternatively, the scoreline design is a "V" shape, in which case there is no bottom other than a vertex or fillet radius.
Iron-type golf clubs having scorelines with sharp edges and relatively vertical side walls are advantageous to golfers since such sharp edged grooves allow golfers to induce higher levels of spin on a ball struck with such an iron-type golf club having sharp edged grooves. Iron-type golf clubs without sharp edged grooves or essentially vertical side walls will induce less spin when impacting a golf ball, especially higher-lofted (40 degrees+) golf clubs.
Traditionally, grinding has been used for material removal of iron-type golf clubs, but process variation during grinding has resulted in scoreline edges that are too sharp or scoreline widths that are too inconsistent.
Previous methods also used several belting steps to grind and skin the club head before finishing.
Other methods of scoreline fabrication such as machining or forming are too expensive or impractical to be used with cast iron-type golf clubs.

Method for manufacturing a golf club head


Systems and methods for modeling, reporting, controlling and optimizing HVAC systems are provided. A server receives HVAC system data, processes the data and sends the processed data to a client device. The client device receives the processed data and then makes certain choices of analog and digital rules to apply to the data to reach conclusions about certain mechanical states of the system and flow efficiencies. The rule choices are sent to the server. The server analyzes the HVAC system based on the rules and generates a report. The report can be used to optimize the mechanical components of the HVAC system or control them directly in a feedback loop.

Modern heating, ventilation and air conditioning, and lighting systems of large building complexes or campuses are typically controlled by a central server in communication with many individual hardware controllers that execute temperature and other system set points. Such HVAC systems are often composed of several related subsystems such as boilers, chillers, ventilation systems, chilled water systems, lighting systems, plumbing systems, and energy management systems. Each of these subsystems has various sensors and control units that are periodically calibrated. In a similar way, each of these subsystems has filters and other disposable parts that are designed to be periodically repaired or replaced. Because of the complexity of the subsystems, it is difficult to calibrate and maintain them with optimal efficiency. As a result, energy usage of the systems is often inefficient and wasteful.

Building automation and control system modeling and reporting


A system for a downhole tool includes an X-ray generator that outputs X-ray radiation into a surrounding sub-surface formation using electrical power received from a power supply and a detector device adjacent the X-ray generator. The detector device includes a first detector with a first radiation sensitivity that outputs a first measurement signal based on interaction between a first portion of the X-ray radiation and the first detector. The detector device also includes a second detector with a second radiation sensitivity adjacent the first detector, where the second detector outputs a second measurement signal based on interaction between a second portion of the X-ray radiation and the second detector. Further, the detector device includes a control system communicatively coupled to the X-ray generator and the detector device, where the control system determines characteristics of the X-ray radiation output from the X-ray generator based at least in part on a radiation model that describes expected relationship between the characteristics of the X-ray radiation and doses indicated by the first measurement signal and the second measurement signal.

The present disclosure relates to electrically operated radiation generators and, more particularly, to monitoring and/or controlling operation of an electrically operate radiation generator.
This section is intended to introduce the reader to various aspects of art that may be related to various aspects of the present techniques, which are described and/or claimed below. This discussion is believed to be helpful in providing the reader with background information to facilitate a better understanding of the various aspects of the present disclosure. Accordingly, it should be understood that these statements are to be read in this light, and not as an admission of any kind.
Generally, an electrically operated radiation generator, such as an X-ray generator, a gamma ray generator, or a neutron generator, may generate radiation using electrical power on-demand to facilitate determining characteristics of its surrounding environment. Thus, electrically operated radiation generators may be used in various contexts, such as a downhole tool or for material analysis. For example, in a downhole tool, an electrically operated radiation generator may facilitate determining porosity of surrounding formations based at least in part on radiation count and/or mineralogy of surrounding formations based at least in part on a radiation spectrum.
To facilitate determining the characteristics, the electrically operated radiation generator may output high energy radiation into its surrounding environment. Once output, the high energy radiation may interact with atoms in the surroundings, for example. This interaction may be scattering of the radiation off of electrons in the atoms or off the atomic nuclei. The interaction may also include transferring energy to a nucleus or inducing nuclear reactions, which may result in the release of gamma rays, charged particles and/or neutrons. In some instances, relationship between radiation output from the electrically operated radiation generator and radiation received from the surrounding environment may be indicative of characteristics of the surrounding environment.
Additionally, in some instances, characteristics of radiation output from an electrically operated radiation generator may be indicative of the operation of the electrically operated radiation generator and, thus, used to control operation. However, in some instances, accurately determining characteristics of radiation output from an electrically operated radiation generator may be difficult, for example, due to space constraints, high temperatures, and/or high radiation flux.

Downhole X-ray radiation detector systems and methods


The present invention concerns a method for forming a Semiconductor-On-Insulator structure that includes a semiconductor layer of III/V material by growing a relaxed germanium layer on a donor substrate; growing at least one layer of III/V material on the layer of germanium; forming a cleaving plane in the relaxed germanium layer; transferring a cleaved part of the donor substrate to a support substrate, with the cleaved part being a part of the donor substrate cleaved at the cleaving plane that includes the at least one layer of III/V material. The present invention also concerns a germanium on III/V-On-Insulator structure, an N Field-Effect Transistor (NFET), a method for manufacturing an NFET, a P Field-Effect Transistor (PFET), and a method for manufacturing a PFET.

During the past forty years, microelectronic technology has been able to shrink the dimensions of its basic element, namely the transistor, and thus to increase the density of transistors in circuits, as well as to improve the performance of each transistor. This increase is found to follow a very well known exponential curve called "Moore's law." For the first part of this curve, the performance increase was directly derived from the smaller dimensions of the transistor, but for the last ten years, high-performance silicon-based Complementary Metal-Oxide Semiconductor (CMOS) technology has relied heavily on material innovations at the transistor level to maintain generational performance trends.
One aspect of the material innovations was to increase the strain in the silicon crystal to boost carrier mobility and thus to reach high current density, which directly transfers into higher performance for the circuit. This aspect has been pushed to its limits for the last generation of improvements, so now it is either inconceivable to continue to build more strain or the mobility increase saturates even if more strain is applied. Despite this limitation, the need to gain more performance through carrier mobility gain remains.
Field-effect type transistors (FETs) rely on an electric field to control the shape and, hence, the conductivity of a channel of one type of charge carrier in a semiconductor material. While silicon has typically been used in the channels of such transistors, new higher-mobility materials are expected to replace silicon. The most studied high mobility materials for N Field-Effect Transistors (NFETs) are III/V materials, and in particular GaAs and InGaAs. Pure Ge or SiGe alloys are usually contemplated for P Field-Effect Transistors (PFETs). Manufacturing structures comprising such new materials, and in particular Semiconductor-On-Insulator (SeOI) structures, however, remains problematic.
SeOI structures comprise one or more thin layers of semiconductor materials on a buried insulating layer, covering a support substrate, generally made of silicon. But, silicon, on the first hand, and GaAs or InGaAs, on the other hand, are crystalline materials having very different lattice parameters which do not easily match. A layer of InGaAs grown on a silicon substrate therefore presents crystal defects, misfits and dislocations which drastically reduce performances, unless a very thick buffer layer is grown from a silicon substrate to accommodate the large difference in lattice parameter. The growing of such a thick layer is both time consuming and expensive.
Alternatively, support substrates that are more compatible, for example, made of GaAs or InP, do exist, but these alternative substrates are expensive and are available only in limited diameters (e.g., a maximum of 150 mm InP wafers compared with 300 mm silicon wafers). All of these solutions are, therefore, not useful for the manufacture of high-yield microelectronic devices.
Moreover, moving away from silicon to high-mobility materials implies that two different SeOI structures would be required for N or P FETs, whereas silicon is useful for either one.
Finally, there is another major obstacle to form a conventional III/V transistor with implanted source and drain. Indeed, a transistor needs three electrodes, two of then being connection points with the semiconductor material in a FET (at the source and the drain). But, due to doping implantation defects that are impossible to heal, metallic contacts with III/V materials present a high resistance, which also reduces performance.
There is consequently a need for SeOI structures that enable high-yield manufacturing of a III/V high-mobility channel transistors, with low access resistance source and drain contacts, as well as methods of making such structures. These are now provided by the present invention.

Method for forming a Ge on III/V-on-insulator structure


A mailbox comprises a box body with a door having a lock, a mailbox unlocking code input device for inputting an unlocking code to unlock the mailbox, a communication module for communicating with a remote management terminal, a storage module at the mailbox or the remote management terminal for storing one or more preset mailbox unlocking codes, and a processor at the mailbox or the remote management terminal for identifying whether the input mailbox unlocking code matches the one or more preset mailbox unlocking codes, and issuing a mailbox unlocking instruction if matching. The processor comprises a mailbox unlocking code management circuit used to invalidate the matched mailbox unlocking code after the mailbox is unlocked, generate a new mailbox unlocking code when no valid mailbox unlocking code is currently available, and store the new mailbox unlocking code in the storage. The mailbox can safely, conveniently and automatically receive and/or send mail.

With the development of electronic commerce, people do more and more internet shopping. Internet shopping needs delivery, but the time the mail arrives at the receiving address is usually uncertain, or at least cannot be fixed in some short period. Therefore, there will be no sign or need to find someone else to sign for the receipt of delivery. This is often troublesome to the sender/courier, and also to the recipient; whatever, it's not pleasant to receive the mail earlier or have to ask other people to sign for it. Sometimes due to the security reasons, the sender/courier cannot get into high levels of a building, but has to wait for the recipient in the hall, while the recipient has to get down the stairs to fetch the mail and then get up, which is very inconvenient. Furthermore, people often have to receive the delivery at work even they have bought some household items, so that they have to move the goods home with additional cost. These are all unpleasant shopping experience.
The same problems could happen when there is a need to send a mail or return a purchased goods. The sender may have to go to work and cannot wait for the courier to pick up his mail; it's also troublesome to take the item be sent to the work.
This invention aims to solve the above-mentioned problems.

Smart mailbox, smart mailbox system and related method


A flow control device for controlling the rate of flow liquid wherein a liquid supply tube is inserted in a liquid supply tube insertion channel extending in the longitudinal direction of the liquid supply tube. A roller is provided for squeezing the liquid supply tube against the bottom of the tube insertion channel. Ridges are provided for squeezing the opposite side edges of the liquid supply tube to a greater degree than the central portion of the liquid supply tube. The bottom of the insertion channel has a first inclined surface inclined with respect to roller bearing grooves for fine adjustment of the rate of liquid flow, and a second inclined surface terminating in the first inclined surface and inclined in the same direction as the first inclined surface but by a greater angle than the first inclined surface for a coarser adjustment of liquid flow through the liquid supply tube.

This invention relates to a flow control device used for controlling the rate of flow of liquid passing through a liquid supply tube of a liquid transfer set, such as a solution administration set.
FIGS. 1 to 3 show a prior art liquid flow device of this type. As is shown, the device comprises a housing 1 with a liquid supply tube insertion channel 2. Opposite side walls of the liquid supply tube insertion channel 2 are formed with bearing grooves 4 (FIGS. 2 and 3). A manually movable roller 3 has its shaft 3b mounted in the bearing grooves 4 such that it is movable along the liquid supply tube insertion channel 2. The liquid supply tube insertion channel 2 has a bottom surface 2a which is inclined by a predetermined (FIG. 3) angle with respect to the bearing grooves 4. A liquid supply tube 5 is passed through the bottom surface 2a and periphery 3a of the roller 3. The roller 3 is manually moved to be closer to or remoter from the bottom surface 2a of the liquid supply tube insertion channel 2 to vary the extent of squeezing of the liquid supply tube 5 so as to control the rate of flow of liquid.
In the above prior art flow control device, the liquid supply tube 5 is made of a soft thermoplastic polymer such as polyvinyl chloride and is therefore subject to a phenomenon of creep. Squeezed opposite edges of the liquid supply tube initially have strong restoring force and tend to restore to the initial state. In long use, however, the restoring force becomes weaker, so that the initially formed inner flow passage of the liquid supply tube 5 is changed in long use. This means that it is difficult to obtain a stable rate of flow.
In a different aspect, with the prior art flow control device it is necessary to provide a wide range of rate of flow, from zero to a very high rate. Also, a certain limitation is imposed on the length of the housing 1 by considerations of the durability and operability. Therefore, it is difficult to reduce the inclination of the bottom surface 2a of the liquid supply tube insertion channel 2. This means that it is difficult to obtain flow control, particularly fine flow control.
Other prior art pertaining to the flow control device according to the present invention includes Japanese Patent Disclosures 47-1540, 50-41374, 52-81718, 52-108691, 52-142331, 53-103685, 53-144191, 53-148193, 54-2515, 54-10426, 54-10427, 54-60792, 54-108492, 55-72986, 58-30593, 61-41462, 50-125591, 50-125592 and 51-102392, Japanese Utility Model Disclosures 53-18089, 53-42499, 54-3096, 54-66697, 54-72398, 54-183196, 55-2338, 57-12868, 57-188976, 57-194958, 57-194959, 58-58150, 58-58151, 59-5939, 59-88563, 5992265, 61-151742, 61-156935, 61-180042, 61-180043 and 54-131395, Japanese Patent Publications 48-36526, 55-27986, 55-27987, 55-31351, 57-8342, 60-27870, 55-8573, 56-43578, 56-49013, 58-22224 and 58-44384, Japanese Utility Model Publications 51-45911 and 59-9642 and Japanese Patent Announcement 56-501619.


The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.

1. Field of the Invention
The present invention relates to an electronic device with a multilayer structure and a method of making the same.
2. Related Background Art
There are conventional thin-film piezoelectric elements being a type of electronic devices in this technical field, for example, as disclosed in Japanese Patent Application Laid-Open No. 2003-229611 and others. For fabricating the thin-film piezoelectric element described in this Application, two silicon substrates are first prepared and a (200) plane preferentially oriented MgO film is deposited on a surface of each substrate. Then a first electrode film, a piezoelectric film, and a second electrode film are successively laid on each substrate with the MgO film thereon, thereby fabricating two multilayer substrates. Then these multilayer substrates are bonded to each other with an adhesive so that their electrode films face each other. Thereafter, only one silicon substrate is removed by etching. Then forming into a predetermined element shape by dry etching or the like and coating with resin, thereafter, the other silicon substrate is removed by etching to complete fabrication of the thin-film piezoelectric element. Related technologies are also disclosed in Japanese Patent Applications Laid-Open No. 2002-164586, Laid-Open No. 2001-313429, and Laid-Open No. 11-312801, and Japanese Patent No. 3310881.
However, the aforementioned conventional electronic device has the following problem. Namely, the step of removing the second substrate by etching sometimes involved permeation of an etching solution through a joint between the coating resin (protecting film) and the laminate comprised of the electrode films and piezoelectric films. If this etching solution permeates up to the piezoelectric film, the piezoelectric film will be dissolved to heavily degrade the characteristics of the piezoelectric element fabricated. It also leads to reduction of yield and reduction of productivity of the electronic device.
The present invention has been accomplished to solve the above problem and an object of the present invention is therefore to provide an electronic device with improved characteristics and a method of making the electronic device.


The purpose of the present invention is to provide a colorectal cancer drug that uses microRNA exhibiting outstanding effectiveness in colorectal cancer patients, particularly colorectal cancer patients having a mutated KRAS gene. miR4689 and/or miR4685-3p can suppress the growth of colorectal cancer cells, particularly colorectal cancer cells having a mutated KRAS gene, and thus exhibit an effective antitumor effect.

The EGFR (Epidermal growth factor receptor) is a tyrosine kinase receptor of the ER (ErbB) family. The EGFR is known to be playing important roles in cell differentiation, cell proliferation, and maintenance of the state of cells in normal tissue, and also, in carcinoma tissue, to be heavily involved in growth, invasion, and metastasis. Signal transduction downstream of the EGFR is carried out by KRAS.
Signal transduction downstream of RAS is mainly carried out via the RAF-MEK-ERK cascade. It is also carried out via the SEK-JNK cascade, in which SEK and JNK are members of the broad MAPK family, the PI3K-AKT cascade that is deeply involved in apoptosis, the DAG-PKC cascade, and the JAK-STAT cascade, for example. A signal from a receptor like EGFR is transduced via such a cascade into the nucleus, where the signal activates various transcriptional factors and induces proliferation, survival, invasion, and anti-apoptotic activity of the cells.
The KRAS gene is known as a colorectal cancer proto-oncogene. KRAS-gene mutation is found in about 40% of patients with colorectal cancer. Conventionally, colorectal cancer with wild-type KRAS gene is effectively treated by administration of an anti-EGFR antibody, such as cetuximab, that suppresses signal transduction from EGFR. This treatment has been a great success. However, the anti-EGFR antibody is known as being ineffective against KRAS-gene-mutant colorectal cancer (Non-patent Documents 1 and 2, for example). A reason for this ineffectiveness in KRAS-gene-mutant colorectal cancer is probably the following: RAS mutation causes a lack of GTPase; RAS is constitutively active; signals downstream of RAS are turned on at all times; proliferation, survival, invasion, and anti-apoptotic activity of the cell are further induced; and, as a result, the action of the anti-EGFR antibody is canceled.
According to reports, blocking the signals downstream of RAS has an antitumor effect on KRAS-gene-mutant colorectal cancer cells. For example, Patent Document 3 reports that a MEK1/2 inhibitor can suppress proliferation of KRAS-gene-mutant colorectal cancer cells. Patent Document 4 reports that the suppressive effect of a MEK1/2 inhibitor on proliferation of KRAS-gene-mutant colorectal cancer cells is enhanced when the MEK1/2 inhibitor is used in combination with cetuximab.
A microRNA is a small RNA molecule of 18 to 24 nucleotides and is found in a wide range of eukaryotes. About 1,000 human miRNAs have been found. The miRNA is a short, single-stranded, endogenously-expressed RNA molecule first reported in 1993. From DNA, an RNA molecule having a loop structure is transcribed, which is called pri-miRNA. The loop is cleaved by an enzyme to yield a pre-miRNA. The pre-miRNA is exported from the nucleus. Then, from the pre-miRNA, a miRNA sequence of 20 to 25 bases is cut out by Dicer. The miRNA sequence is taken in by an RNA-induced silencing complex (RISC), which is a complex of ribonucleic acid and protein Argonaute. As a result, a miRNA-RISC complex is formed, which binds to the 3′UTR of mRNA and suppresses gene expression. The pairing between a miRNA molecule and an mRNA molecule is not perfect, and therefore a single miRNA molecule can have more than one target genes. This means that a single miRNA molecule can be regulated by targeting a plurality of genes, which is an important feature of miRNA.
The expression pattern of microRNA in KRAS-gene-mutant colorectal cancer has not yet been identified. Therefore, if analysis on changes in microRNAs in KRAS-gene-mutant colorectal cancer caused by activation of signal transduction pathways induced by KRAS-gene mutation can successfully establish a treatment that corrects aberration of the microRNAs, patients with KRAS-gene-mutant colorectal cancer can be helped.

Colorectal cancer drug, and method for predicting prognosis of colorectal cancer patient


A method of fabricating a phase change material (PCM) device is provided. The method includes disposing a dielectric layer above or below a PCM layer and disposing first and second contacts in a same plane within the dielectric layer with the first contact having a larger contact area than the second contact. The method also includes one of directing a short current pulse from the first contact to the second contact so as to form amorphous-PCM in a region of the PCM layer adjacent to the second contact with crystalline-PCM partially surrounding and in contact with the amorphous-PCM and directing a long current pulse from the first contact to the second contact so as to form crystalline-PCM in the region of the PCM layer adjacent to the second contact.

The present invention generally relates to fabrication methods and resulting structures for semiconductor devices. More specifically, the present invention relates to a planar single-crystal phase change material (PCM) device.
Phase-change materials, such as chalcogenides, can be switched between two states, poly-crystalline and amorphous, based on heat produced by the passage of an electric current. In the poly-crystalline state, each grain of the material is a perfect crystal and the material is conductive (almost metallic). It is notable however that each of the grains is randomly oriented with respect to the other grains resulting in an overall poly-crystalline material. In the amorphous state, there is no long range order in the material and the material is highly resistive. These two states make phase-change materials particularly well-suited for storing data.
To change the phase change material from the amorphous to the poly-crystalline state the material is heated above its crystallization temperature for a sufficiently long time. It will arrange itself into a poly-crystalline state during that heating time. To change the material from the poly-crystalline state to the amorphous state it will be heated above its melting temperature and then quenched (quickly cooled). It will not have enough time to rearrange itself in an ordered state, and an amorphous state will result. Both the crystallization temperature and melting temperature vary depending on the particular phase change material.

Planar single-crystal phase change material device

INTERNATIONAL BUSINESS MACHINES CORPORATION


Systems and methods for determining an optimum number of PV modules and predicting energy generation for a solar photovoltaic (PV) system are disclosed. In one embodiment, a method is provided that includes receiving an address and zip code of a proposed installation site, and displaying an image of the proposed installation site. The method includes receiving an input identifying a mounting plane on the image, displaying the mounting plane, determining an optimum number of PV modules that would fit within the mounting plane, and displaying the optimum number of PV modules on the mounting plane. The method includes sending a request for roof pitch data for neighboring sites within the zip code, receiving the roof pitch data, determining an average roof pitch based on the roof pitch data, and predicting PV generation based on the number of PV modules in the mounting plane and the average roof pitch.

The present disclosure relates in general to solar photovoltaic (PV) modeling tools, and in particular to PV modeling tools for estimating PV energy generation for an installation site.
In recent years, climate change concerns, federal/state initiatives, and other factors have driven a rapid rise in the installation of renewable energy generation (EG) systems (i.e., systems that generate energy using renewable resources such as solar, wind, hydropower, etc.) at residential and non-residential sites. Solar photovoltaic (PV) systems, in particular, have been very popular EG systems.
Currently, the process of installing PV panels for a proposed PV system requires three parties: a salesman, a surveyor, and an installer. The salesman explains to a potential customer all the benefits of a PV system, as well as explains how the PV system may be configured and how it would look. If the potential customer decides to purchase the PV system, then the surveyor visits the installation site and measures the installation site to determine how the PV system will actually be configured. Thereafter, the installer visits the site and installs the PV system. This entire process can be time-consuming and cumbersome, particularly for high volume system vendors/installers. Therefore, it is important for industry leaders to find ways to improve on this process.


A seat lift mechanism in an automotive vehicle incorporates a swivel base mounted on a stationary base secured to a compartment floor of the vehicle for rotation about a vertical axis so as to be moved between a forward-facing position where the front side of the swivel base is oriented to the front of the vehicle, and a sideways position where the front side of the swivel base is opposed to a side door opening of the vehicle. A frame is supported on the swivel base for rotation therewith and a lift rack provided thereon with a passenger seat is mounted on the frame. The lift rack is connected to the frame by means of a link mechanism in such a manner that when the swivel base is retained in the sideways position, the lift rack and seat are movable from a first position on the frame to a second position close to the ground where the seating surface of the seat is maintained at an inclined angle. An actuator is combined with the link mechanism to reciprocate the lift rack and seat between the first and second positions. With the seat lift mechanism, the seat can be moved out of the door opening and lowered to the position adjacent to the ground. Thus, an aged or handicapped person can easily sit on the seat or stand up therefrom, and get in or out of the vehicle without any difficulty.

The present invention relates to a seat lift mechanism in an automotive vehicle such as a passenger car, which lift mechanism is constructed to move a passenger seat from a usual position in the passenger compartment to and from an outside position adjacent the ground.
In an automotive vehicle, such as a passenger car, the compartment floor is placed at a high position from the ground, and it is difficult for an aged or handicapped person to get in and out of the vehicle compartment. To solve such a problem, various kinds of lift mechanisms have been proposed, wherein a lift step is mounted on a vehicle body structure in such a manner that where a user sat in a wheelchair or stood on the lift step for getting into or out of the vehicle compartment, the lift step is lifted up to the height of the compartment floor from a lower or ground position.
The lift mechanisms of the prior art are disadvantageous in that the user has to move within the vehicle compartment, both in order to sit on a passenger seat after being lifted and again in order to use the lift mechanism when he wishes to get out of the vehicle compartment. In addition, the conventional lift mechanism occupies a space in the vehicle compartment despite being used only when the handicapped or aged user gets in or out of the vehicle compartment. This results in reduction of space for other passengers and/or cargo space in the vehicle compartment. Furthermore, in the case where the user sits in a wheelchair after being lifted into the vehicle compartment, locking means must be provided in order to retain the wheelchair in place within the vehicle. In such a case, utility of the automotive vehicle is limited, and the user may not sit on the same seat as others. Such a situation is unpleasant for a handicapped person.

Seat lift mechanism for an automotive vehicle


The present invention relates to isoquinolinone derivatives of formula (I):

The essential function of the lungs requires a fragile structure with enormous exposure to the environment, including pollutants, microbes, allergens, and carcinogens. Host factors, resulting from interactions of lifestyle choices and genetic composition, influence the response to this exposure. Damage or infection to the lungs can give rise to a wide range of diseases of the respiratory system (or respiratory diseases). A number of these diseases are of great public health importance. Respiratory diseases include Acute Lung Injury, Acute Respiratory Distress Syndrome (ARDS), occupational lung disease, lung cancer, tuberculosis, fibrosis, pneumoconiosis, pneumonia, emphysema, Chronic Obstructive Pulmonary Disease (COPD) and asthma.
Among the most common of the respiratory diseases is asthma. Asthma is generally defined as an inflammatory disorder of the airways with clinical symptoms arising from intermittent airflow obstruction. It is characterised clinically by paroxysms of wheezing, dyspnea and cough. It is a chronic disabling disorder that appears to be increasing in prevalence and severity. It is estimated that 15% of children and 5% of adults in the population of developed countries suffer from asthma. Therapy should therefore be aimed at controlling symptoms so that normal life is possible and at the same time provide basis for treating the underlying inflammation.
COPD is a term which refers to a large group of lung diseases which can interfere with normal breathing. Current clinical guidelines define COPD as a disease state characterized by airflow limitation that is not fully reversible. The airflow limitation is usually both progressive and associated with an abnormal inflammatory response of the lungs to noxious particles and gases. The most important contributory source of such particles and gases, at least in the western world, is tobacco smoke. COPD patients have a variety of symptoms, including cough, shortness of breath, and excessive production of sputum; such symptoms arise from dysfunction of a number of cellular compartments, including neutrophils, macrophages, and epithelial cells. The two most important conditions covered by COPD are chronic bronchitis and emphysema.
Chronic bronchitis is a long-standing inflammation of the bronchi which causes increased production of mucous and other changes. The patients' symptoms are cough and expectoration of sputum. Chronic bronchitis can lead to more frequent and severe respiratory infections, narrowing and plugging of the bronchi, difficult breathing and disability.
Emphysema is a chronic lung disease which affects the alveoli and/or the ends of the smallest bronchi. The lung loses its elasticity and therefore these areas of the lungs become enlarged. These enlarged areas trap stale air and do not effectively exchange it with fresh air. This results in difficult breathing and may result in insufficient oxygen being delivered to the blood. The predominant symptom in patients with emphysema is shortness of breath.
Therapeutic agents used in the treatment of respiratory diseases include corticosteroids. Corticosteroids (also known as glucocorticosteroids or glucocorticoids) are potent anti-inflammatory agents. Whilst their exact mechanism of action is not clear, the end result of corticosteroid treatment is a decrease in the number, activity and movement of inflammatory cells into the bronchial submucosa, leading to decreased airway responsiveness. Corticosteroids may also cause reduced shedding of bronchial epithelial lining, vascular permeability, and mucus secretion. Whilst corticosteroid treatment can yield important benefits, the efficacy of these agents is often far from satisfactory, particularly in COPD. Moreover, whilst the use of steroids may lead to therapeutic effects, it is desirable to be able to use steroids in low doses to minimise the occurrence and severity of undesirable side effects that may be associated with regular administration. Recent studies have also highlighted the problem of the acquisition of steroid resistance amongst patients suffering from respiratory diseases. For example, cigarette smokers with asthma have been found to be insensitive to short term inhaled corticosteroid therapy, but the disparity of the response between smokers and non-smokers appears to be reduced with high dose inhaled corticosteroid (Tomlinson et al., Thorax 2005;60:282-287).
A further class of therapeutic agent used in the treatment of respiratory diseases are bronchodilators. Bronchodilators may be used to alleviate symptoms of respiratory diseases by relaxing the bronchial smooth muscles, reducing airway obstruction, reducing lung hyperinflation and decreasing shortness of breath. Types of bronchodilators in clinical use include β2 adrenoceptor agonists, muscarinic receptor antagonists and methylxanthines. Bronchodilators are prescribed mainly for symptomatic relief and they are not considered to alter the natural history of respiratory diseases.
The serine/threonine kinase, p38, is a member of the stress and mitogen activated protein kinase family (SAPK/MAPK) and participates in intracellular signalling cascades involved in a number of responses associated with inflammatory processes. Four isoforms of p38 kinase are known to exist, identified as p38α, p38β, p38γ and p38δ.
The p38 pathway is activated by stress (including tobacco smoke, infections or oxidative products) and pro-inflammatory cytokines (e.g. IL-1 or TNF-α) and is involved in induction of cytokines such as TNF-α, IL-1, IL-6 and matrix metalloprotease by bacterial lipopolysaccharide (LPS). Activation of p38 by dual phosphorylation of thr180 and tyr182 located in the activation loop is achieved by two dual specificity upstream MAP kinase kinases (MKK); MKK3 and MKK6. In turn p38 phosphorylates numerous targets including other kinases and transcription factors. In addition to effects on transcription, p38 is involved in the control of mRNA stability of several cytokines including TNF-α, IL-3, IL-6 and IL-8. Thus through this cascade, p38 kinase is thought to play a significant role in the control of transcription and translation responsible for the induction of pro-inflammatory genes and the subsequent release of pro-inflammatory cytokines such as TNF-α from cells. This mechanism has been validated by investigation of the effects of inhibiting the p38 kinase enzyme on chronic inflammation and arthritis (Kumar et al, Nature Reviews Drug Discovery (2003) 2: 717-725). In particular, p38 kinase inhibitors have been described as potential agents for treating rheumatoid arthritis.
In addition to the links between p38 activation and chronic inflammation and arthritis, there is also data implicating a role for p38 in the pathogenesis of airway diseases in particular COPD and asthma. Stress stimuli (including tobacco smoke, infections or oxidative products) can cause inflammation within the lung environment. Inhibitors of p38 have been shown to inhibit LPS and ovalbumin induced airway TNF-α, IL-1-β, IL-6, IL-4, IL-5 and IL-13 (Haddad et al Br J Pharmacol, 2001, 132 (8), 1715; Underwood et al., Am J Physiol Lung cell Mol 200, 279, L895; Duan et al., 2005 Am J Respir Crit. Care Med, 171, 571; Escott et al Br J. Pharmacol., 2000, 131, 173; Underwood et al., J Pharmacol Exp Ther. 293, 281). Furthermore, they significantly inhibit neutrophilia and the release of MMP-9 in LPS, ozone or cigarette smoke models. There is also a significant body of preclinical data highlighting the potential benefits of inhibition of the p38 kinase that could be relevant in the lung (Lee et al. Immunopharmacology, 2000, 47, 185-200). Thus, therapeutic inhibition of p38 activation may be important in the regulation of airway inflammation. Efficacy is anticipated when p38 kinase inhibitors are administered either locally to the lung (for example by inhalation and intranasal delivery) or via systemic routes (for example, oral, intravenous and subcutaneous delivery).

Abstract: wherein R1, R2, R3, R4, R5, R6 and R7 are as herein defined; processes for their preparation, pharmaceutical compositions containing them and their use in therapy.


A chip scale package, which can be fabricated on a print circuit board, comprises a chip having multiple electrodes, a plurality of conductive blocks, and an insulating material. The electrodes of the chip are electrically connected to the conductive blocks respectively through one of the surfaces thereof by a conductive bond, and are electrically connected to the circuit on the print circuit board through the side surfaces thereof. The insulated material is filled on the chip surface between the conductive blocks, and in the gap between the conductive blocks and the chip.

1. Field of the Invention
This invention relates to a chip scale package (CSP), and more particularly to a chip scale package of semiconductor.
2. Description of Related Art
Following the development of the semiconductor industry, a lot of related new technology is continuously progressing and changing. The manufacturing process of a semiconductor product is generally divided into three stages, firstly the formation of semiconductor base, i.e. the portion of chip-forming technology; secondly, the manufacturing of semiconductor devices such as Metal Oxide Semiconductor (MOS.), the conductive wire inter-connection of stacked metal etc., lastly the packaging process. Today, almost all the efforts on the development of electronic products are heading for the target of light, thin, short. and small in dimension. For examples, these efforts are to raise the degree of intoglation for the semiconductor, and to provide various types of packaging technology such as Chip Scale Package (CSP), Multi-Chip Module (MCM) etc. As the manufacturing technology of semiconductor has progressed to such a tiny width as 0.18 .mu.m of semiconductor elements, the degree of integration has become a great break through. Therefore, how to develop the corresponding tiny packages of semiconductor to achieve the object of minimizing the semiconductor products has become the important topic of study nowadays.
As far as the semiconductor devices of low-number-of-lead are concerned, for examples, high voltage transistor device and identification microchip etc., generally, lead frame is still employed as a chip carrier. Shown in FIG. 1 is a schematic cross-sectional view of the semiconductor package of low-number-of-lead according to the prior art. Take a high voltage transistor device on the circuit board for example, the conventional high voltage transistor device is used for being functioned as a switch. This high voltage transistor device is a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) having three connecting points, a gate, a source, and a drain.
As shown in FIG. 1, the conventional chip scale package is a Small Outline Transistor (SOT) type with its lead frame possessing four leads 12 and a chip carrier 10. After the chip 16 is bonded to the chip carrier 10, by the use of wire bonding method, bond wire 18 is employed to connect the gate, source, and drain of the chip 16 to the lead 12. Thereafter, a insulated material 20 is employed to encapsulate the chip 16, the chip carrier 10, the bond wire 18, and the inner end of the lead 12. The outer end of the lead 12 is to be formed as a Z-shaped lead (also called as a Gull-Wing type) to facilitate the follow-up SMT (Surface Mount Technique) fabrication.
The conventional chip scale package of the SOT type as described above is quite possible to increase the circuit impedance. Consequently, it will result in signal decay and signal delay since the input/output of the signal is unable to transmit to the chip 10 without passing through the path including the lead and the wire which is relatively lengthy. As far as the mass production type of semiconductor technology of today is concerned, for the MOSELT with 0.4 .mu.m of lead width, the resistance as low as 0.2 mini-ohm-cm has been achieved. However, the resistance of the lead of the conventional chip scale package is as high as 20 mini-ohm-cm that is totally unmatched to the chip, and thereby seriously affecting the performance of the device. In additions, this type of packaging makes the volume of the device increase, the area of application is therefore limited, besides, it contradicts the design principle of light, thin, short, and small in dimension.


A novel CRT and method of making the CRT are disclosed. The CRT comprises an internal neutral density filter that lies between the phosphor deposits and the interior surface of the faceplate panel. The filter enhances the contrast of the CRT without compromising center to edge brightness ratio of the CRT. The filter comprises very fine particles, wherein the particles are black, gray, or a mixture of black and gray. The filter reduces the absorption of the faceplate by 25 to 75%. The invention is particularly useful for substantially flat CRTs. The method of producing the novel CRT comprises the steps of preparing a suspension of well-dispersed light-absorbing, carbon-containing particles which are 0.05 to 2 microns in aqueous media and applying the suspension onto the interior surface of the faceplate panel prior to applying at least one phosphor deposit. The suspension may also include suitable organic and inorganic binders and dispersing and wetting agents.

To enhance the contrast and improve the brightness ratio of CRTs, manufacturers developed and commercially employed black matrix on the interior surface of faceplate panels of CRTs such as that described in U.S. Pat. No. 3,558,310, issued to Mayaud on Jan. 26, 1971. The matrix commonly consisted of graphite structures printed on panels whereby the structures have openings into which respective phosphor deposits are to be printed. In current entertainment CRTs, the matrix structures are vertical stripes of light-absorbing material, wherein the openings are the spaces between adjacent stripes.
In the 1970's, CRT faceplate panels were clear glass having a center transmission of about 84% and an edge transmission of about 80%. The lower edge transmission was due to the panel glass thickness being higher in the edge area than the center area. The panel thickness needed to be larger at the edge of the panel relative to the center in order to gain sufficient thermal, mechanical and vacuum strength to survive the subsequent processing of the CRT. Essentially, the required strength of the glass in the panel dictates the thickness of the panel at the center and edges and, in turn, the desired curvature of the panel dictates the required strength of the glass. In the early days, the panels had greater curvature in that the radii of the panel surfaces were relatively small. These products were referred to as 1R, where the 1R designation refers to a radius of curvature of the interior panel surface. The standard for the 1R designation is a 25V CRT having a radius of curvature on the interior of about 40.7 in., wherein "1" is a numerical coefficient and "R" is equal to 40.7 in. for 25V product. From this designation, one of skill in the art knows the approximate interior curvature of the 25V panel based on the numerical coefficient in front of the "R," e.g., 2R would imply a radius of about 81.4 in. for a 25V panel. Those skilled in the art also may recognize that the value of "R" is approximately linearly proportional to the diagonal screen dimension. Therefore, one would expect that the value of "R" for a 35V product would be about 1.4 times greater than that for the "R" of a 25V product, because the diagonal of a 35V is about 1.4 times greater than that for the 25 V product.
In the mid 1980's and early 1990's, the glass transmission was reduced to nominal values of about 52% and 42% by adding the dark tint compounds in glass melt, which exaggerated center to edge glass transmission difference to a ratio of 1.4-1.5 to 1. Additionally during this timeframe, the CRT market was directed to improved cosmetic appearance and improved viewing angles; as such, the trend was to go to panels having greater radii, such as the so-called 1.5R and 2R product. In fact, this trend continues to today, wherein CRTs are being designed and built which are virtually flat. Each change toward flatter CRTs requires the panels to have relatively even greater thickness at the edges with respect to the center to gain adequate strength. The result, however, has been an even greater reduction in the corner or edge glass transmission ratio. For example, in a true flat CRT product where the center transmission is about 52%, the corner to center transmission ratio is about 0.5:1. This is undesirable because the edge or corner brightness of the CRT becomes much lower than the center brightness. Some CRT manufacturers have tried to compensate for the difference by reducing the center matrix openings. Unfortunately, such a reduction in matrix opening produces CRTs with an undesirable reduction in overall brightness and, in some cases, the contrast ratio.
To improve the brightness and the contrast ratio and prevent a large disparity between the center and edge transmission in CRTs having flat or nearly flat panel contours, some manufacturers have gone back to the clear glass having a central transmission of 84% and applied a neutral density laminate sheet on the exterior surface of panels of CRTs. The approach is adequate for center to edge brightness and overall brightness performance of the CRT, however, it is very costly. For example, the use of such a laminate increases the manufacturing cost for a 32V CRT by about 7 Euros. Therefore, the CRT industry is in need of a more cost effective means of manufacturing CRTs with flat or nearly flat panel contours that have acceptable overall brightness performance and contrast.

CRT having internal neutral density filter field of use


In one embodiment, a method includes receiving wastewater having a first total organic carbon (TOC) at a wastewater treatment system comprising a reactor system, wherein the reactor system comprises an anaerobic moving bed biofilm reactor (MBBR) and an aerobic MBBR. The method further includes treating the wastewater in the anaerobic MBBR, wherein the anaerobic MBBR comprises first bio-carriers configured to degrade at least a portion of the first TOC in the wastewater to generate a first treated wastewater and biogas, wherein the first treated wastewater has a second TOC that is less than the first TOC. The method also includes providing the biogas to an external system.

The present invention relates generally to the field of wastewater treatment systems. More particularly, the invention relates to techniques for decreasing total organic content of high strength wastewaters using a combination of anaerobic and aerobic treatment.
In the field of wastewater treatment, a number of different system types are known and are currently in use. In general, these may consist of primary treatment, secondary treatment, and, where desired, tertiary treatment. Primary treatment is often limited to screening and suspended solids removal. Secondary treatment may include a wide range of biological processes, such as biochemical oxygen demand (BOD) reduction, nitrification, de-nitrification, and so forth. Following secondary treatment, further settling, filtering, polishing and other operations may be performed before the wastewater is advanced to final discharge.
In a number of the processes used for wastewater treatment, particulate matter may be caused to precipitate from the wastewater and collect on the bottom of a vessel. Reactor vessels for secondary treatment, for example, may hold wastewater in a reactor vessel, along with biological support media. The biological support media includes bacteria that proliferate and serve to treat the water in the reactor vessel by circulation of the water over the support media. In addition to the biological support media, the reactor vessel may include aeration systems to promote the growth and sustenance of the microbial growth. For example, the aeration systems may bubble compressed air through the wastewater, feeding the bacteria and causing the media to move so as to adequately circulate the wastewater (and the substrate in the wastewater such as BOD) over the biological growth, thereby treating the wastewater. Therefore, the energy demands associated with the secondary treatment process generally increase the overall operational costs for wastewater treatment. Moreover, secondary treatment of the wastewater generates debris and sludge (waste biomass), which generally is removed by clarifier or a dissolved air flotation (DAF).

Moving bed biofilm reactor for waste water treatment system


A semiconductor device can include a plurality of semiconductor elements. The characteristics of each of the semiconductor elements can be easily tested during the production of the semiconductor device or when a failure occurs after the semiconductor device is mounted on a substrate, so that the quality can be well managed and a failure can be reliably analyzed. When not mounted on the substrate, the semiconductor device can have a connection structure in which the plurality of semiconductor elements are electrically independent of each other, so that their characteristics can be tested and analyzed by independently energizing the semiconductor elements. In a semiconductor device module having the semiconductor device mounted thereon, the connection structure can include a parallel circuit of the plurality of semiconductor elements. Therefore, all the semiconductor elements can be driven by applying a voltage between a pair of solder-bonding electrode pads disposed on the semiconductor device-mounting substrate.

1. Technical Field
The presently disclosed subject matter relates to a semiconductor device having a plurality of semiconductor elements mounted thereon, to a semiconductor device module having such a semiconductor device mounted thereon, and to a method for manufacturing such a semiconductor device module.
2. Description of the Related Art
Semiconductor devices (such as semiconductor light emitting devices) including a plurality of semiconductor elements (such as semiconductor light emitting elements) that serve as light sources are used in various fields and applications such as light sources for backlights of LCD display devices, light sources for vehicle interior illumination devices, light sources for outdoor illumination devices, and light sources for flash lamps. Accordingly, the performance specifications of such semiconductor devices can vary for different applications.
If such light emitting devices have high brightness, semiconductor devices can be configured such that the luminous or radiant flux of light emitted from each of the semiconductor light emitting elements is increased, or such that the number of the semiconductor light emitting elements constituting the light emitting device is increased to increase the luminous flux of light emitted from the light emitting device.
The former case can be achieved by increasing the size of each semiconductor light emitting element to increase the area of the light emitting surface (or to increase the flux of the semiconductor light emitting element). However, the increase in the size of the semiconductor light emitting element can cause the following problems:
(1) The probability that crystal defects such as dislocations are present can be high, and therefore the characteristics in a small-current region and the reverse characteristics are likely to deteriorate;
(2) The number of semiconductor light emitting elements that can be obtained from one wafer can be low, and the manufacturing yield, or the number of usable elements, can be low, so that the manufacturing cost can increase; and
(3) The linearity can deteriorate due to the potential distribution in the junction plane caused by the layer resistance.
To solve these problems, a plurality of semiconductor light emitting elements of ordinary size can be used to increase the luminous intensity of the light emitting device, although the manufacturing cost including the material cost and assembling cost can increase.
In such a case, the plurality of semiconductor light emitting elements are electrically connected, for example, in series or parallel. When the semiconductor light emitting elements are connected in series, the same current can flow through each of the semiconductor light emitting elements irrespective of variations in the current-voltage characteristic of the elements, so that the variations in the luminous or radiant flux of the elements can be suppressed. However, problems of series connection can be when a high voltage power source is used, a high driving voltage occurs and that if even one of the semiconductor light emitting elements is broken, then all the elements do not illuminate.
When the semiconductor light emitting elements are connected in parallel, the driving voltage can be low, and therefore the elements can be driven by a low-voltage power source. In addition, even when one of the semiconductor light emitting elements is broken and does not illuminate, the rest of the elements can be illuminated. However, a problem of parallel connection can be that the values of the currents flowing through the semiconductor light emitting elements are different due to variations in their current-voltage characteristics. This can cause variations in the luminous or radiant flux of the semiconductor light emitting elements and variations in luminous or radiant flux reduction ratio.
As described above, each of the series and parallel connections of semiconductor light emitting elements has advantages and disadvantages. Generally, in many cases, semiconductor light emitting devices are used together with other electronic components such as transistors and ICs and driven by general-purpose simple power sources such as dry batteries. Therefore, a parallel connection, in which a low-voltage power source can be used, is often employed.
When semiconductor light emitting elements are connected in parallel, the problem associated with the parallel connection must or should be solved. To solve the problem, the following methods have been proposed.
In one method, semiconductor light emitting elements to be connected in parallel are selected in advance such that their forward voltages match each other (see, for example, Japanese Patent Application Laid-Open No. 2006-222412 corresponding to US 2006/0171135A1). In this manner, the variations in the forward voltages of the semiconductor light emitting elements are reduced to render the forward currents flowing through the elements uniform, so that the variations in luminous flux and variations in luminous flux reduction ratio are reduced.
In another method, semiconductor light emitting elements are die-bonded with die-bonding paste having a resistive component (see, for example, Japanese Patent Application Laid-Open No. 2006-339541). The die-bonding paste provides a series resistance according to the forward voltage of each semiconductor light emitting element, so that the current imbalance between the elements is reduced.
In another method, semiconductor light emitting elements are wire-bonded with bonding wires having a certain resistance (see, for example, Japanese Patent Application Laid-Open No. 2006-339540). In this manner, the gradient of voltage-current characteristics of the semiconductor light emitting elements is reduced to decrease the current imbalance between the elements.

Semiconductor device, semiconductor device module, and method for manufacturing the semiconductor device module


A method of adjusting a circuit operating characteristic. The method includes generating a first signal for application to a reference termination. The method then includes generating a first voltage based on the first signal at a first point on the reference termination and generating a second voltage based on the first signal at a second point on the reference termination. The method also includes adjusting an operating characteristic based upon the first voltage and the second voltage. In an embodiment, the operating characteristic can be an impedance.

The present invention pertains to the field of impedance control. More particularly, the present invention pertains to adjustment of a circuit impedance relative to a transmission line impedance.
The impedance of a driver and receiver relative to the impedance of a transmission line has a significant impact on the efficiency and reliability of communications across the line. For example, integrated circuit chips (IC""s) are increasingly operating at such high frequencies that the signal leads and interconnecting traces between chips behave like transmission lines rather than lumped capacitors. The transmission lines have a characteristic impedance (Zo) which needs to be considered for efficient and reliable transmission across the line. A driver transmitting signals through a transmission line to a receiver or multiple receivers can be plagued by a variety of problems.
For example, multiple reflections due to impedance mismatches at the driver-transmission line interface and the receiver-transmission line interface(s) can cause errors in decoding the signal received at the receiver. These errors can be due to signal integrity factors, such as monotonicity, overshoot, ringback, and long settling times which may impact the signal flight time.
While impedance mismatch creates problems, matching the impedance at the driver-transmission line interface has its own drawback, as well. For example, matching the driver impedance to the transmission line impedance may result in the signal having a large rise time due to the relatively high resistance-capacitance (RC) time constant formed by the driver impedance and the driver output capacitance. Large rise times are undesirable for several reasons, including the increased susceptibility to noise during the time needed for the signal to reach the threshold region of the receiver, and increased driver switching times.
Adjusting the impedance at the driver or the receiver relative to the line impedance is important for controlling the performance across a transmission line. The performance of an IC chip is significantly affected by the impedance of the driver and the receiver. The switching times, number and strength of reflections, and switching quality are a function of the impedance of the driver and the receiver relative to the transmission line impedance. Since decreased switching times, fewer and weaker reflections, and acceptable signal quality would improve performance, it would be advantageous to control impedance so as to achieve relatively lower switching times while still achieving acceptable signal quality.
According to an embodiment of the invention a method of adjusting a circuit operating characteristic is described. For one embodiment, the circuit operating characteristic can be an impedance. The method includes generating a first signal for application to a reference termination. The method then includes generating a first voltage based on the first signal at a first point on the reference termination and generating a second voltage based on the first signal at a second point on the reference termination. The method also includes adjusting an operating characteristic based upon the first voltage and the second voltage.

Dynamic line termination with self-adjusting impedance


The invention is an amusement device involving a ball, a set of targets and a set of obstructions. Specifically, the device has a target is a plurality of concavities towards which a ball is rolled. A plurality of obstructions located near the concavities act to deflect a rolling ball. A peripheral groove surrounds a playing surface to collect errant balls. A projection device is used to roll the ball towards the set of targets.

None.
Not Applicable.
1. Field of the Invention
This invention relates to a type of amusement device in which one or more players or participants roll a tangible body such as a ball towards a target across a playing surface. Use of the device involves both skill and chance. A score is determined according to a set of rules.
2. Related Art
Many amusement devices have been developed as smaller versions of a popular game. An example of this can be seen in U.S. Pat. Nos. 5,096,192; 5,374,220; 6,039,655 and 6,213,886. These patents are all drawn to small bowling type games. U.S. Pat. No. 5,865,681 is drawn to a shuffleboard type of game. U.S. Pat. No. 6,349,939 discloses a game table having different types of game surfaces available, including bowling and shuffleboard.
Other amusement devices consist of target type games. U.S. Pat. No. 5,282,635 discloses a marker toss game in which the object is to toss a marker into a central cup for maximum points. Points are assigned according to the final resting spots of the markers. U.S. Pat. No. 6,089,570 discloses a ball and target game in which a ball is rolled towards the target. The ball and target have hook and loop components such that the ball will stick to the target at a point where the ball contacts the target. Scores are assigned depending upon location of the contact.
A feature common to all of the above amusement devices is the reliance on skill to successfully play the devices. None of the devices integrates an element of chance. Accordingly, there is a need for an amusement device which incorporates both skill and chance. The invented device fills this need.
The invention is an amusement device involving a ball, a set of targets and a set of obstructions. Specifically, the device has a target which is a plurality of concavities towards which a ball is rolled. A plurality of obstructions located near the concavities act to deflect a rolling ball. The ball is rolled towards the concavities in a number of ways. The participant can directly roll the ball towards the concavities. The participant can also roll the ball away from the concavities into an elastic member which then rebounds the ball towards the concavities. Finally, the participant can place the ball in contact with the elastic member, stretch the elastic member away from the concavities, and release the elastic member causing the ball to be propelled towards the concavities as the elastic member is returned to a relaxed state.
Further features and advantages of the present invention, as well as the structure and operation of various embodiments of the present invention, are described in detail below with reference to the accompanying drawings.


A device for dispensing of small volume comprises a pump associated with a container of the substance to be dispensed, the pump comprising: a hollow pump body; and a piston sliding inside said pump body in sealing contact with the pump body around a circular periphery of diameter D2; wherein the pump further includes: a push rod including a central channel in which a valve seat is formed, the push rod sliding in contact with the pump body around a circular periphery of diameter D1 less than D2; a punch secured to the piston and capable of bearing in sealed manner against the valve seat; and resilient means urging the piston against the valve seat.

Devices of this type are known in the state of the art. Thus, Document FR 2 640 589 describes a metering pump for dispensing small-volume drops, the pump comprising a pump body having an open end communicating with a container of the substance to be dispensed, and an end provided with an end wall pierced by a central orifice. A piston secured to a push rod slides in sealed manner inside the pump body, while the push rod slides through the central orifice in the end wall of the pump body. Said push rod includes a central channel opening out axially to the outside of the pump, and radially in the vicinity of the piston into a pump chamber which is delimited by the piston and the pump body, said pump chamber extending between the piston and the end wall of the pump body. The outside end of the central channel in the rod is provided with an outlet valve which may be in the form of two hemispheres that are connected together by a resilient spacer. In addition, a return spring applies resilient thrust to the push rod, thereby urging the piston towards the end wall of the pump body. When a user presses on the push rod, generally via a pusher, the piston is pushed into the container of substance until it leaves the pump body: so long as the piston has not left the pump body, this movement sets up suction in the pump chamber because the outlet valve remains closed; when the piston leaves the pump body, a measured quantity of substance is sucked into the pump chamber. When the user releases the push rod, the piston is returned towards the end wall of the pump by the return spring, and as a result the substance contained in the pump chamber is compressed and ejected via the central channel of the push rod and via the outlet valve which opens under the effect of applied pressure.
Such metering pumps nevertheless suffer from the drawback that the outlet valve is a very small part which is quite difficult to make and to assemble, thereby significantly increasing the cost of the pump. Similarly, the fact that the push rod includes an axial channel and a radial channel means that it must be molded in a special mold including a sliding pin. Such molds are expensive and relatively fragile and thus have an unfavorable influence on the cost of the pump. Since such pumps are designed to be discarded once their container of substance has been emptied, it is appropriate to minimize the cost thereof.
An object of the present invention is to provide a device for dispensing drops of small volume while avoiding the above-mentioned drawbacks.

Device for dispensing drops of small volume, in particular for ophthalmological care

Societe Technique de Pulverisation - S.T.E.P.


A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1S including an area AR1 on which an LDMOSFET is formed and an area AR2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1S.

Japanese Patent Application Laid-Open Publication No. 2002-175081 (Patent Document 1) describes a technique for forming a TFR (thin-film resonator) on a cavity. This technique indicates that the cavity can be formed by using a selective etching. More specifically, it indicates that the cavity is formed by etching a high resistivity silicon layer coated on a layer for forming a bottom etching barrier.

This patent is subject to a terminal disclaimer.

Semiconductor device, manufacturing method of the same, and mobile phone


A pseudolite device for providing navigation data, while denied or having limited access to satellite navigation signals for instance, may include a receiver for receiving, from each of a plurality of pseudolites, respective navigation data including an indication of an absolute position of a respective pseudolite and a time instance at which the navigation data is transmitted by the respective pseudolite. The pseudolite device may include a processor configured to determine an absolute position of the pseudolite device according to the navigation data received from each of the plurality of pseudolites, and a transmitter for broadcasting positioning data and transmission time data. The positioning data can include an indication of the determined absolute position of the pseudolite device and the transmission time data includes an indication of a time instance at which the positioning data is transmitted by the transmitter.

Global navigational satellite systems (GNSS) include the global positioning system (GPS) and the Russian global orbiting navigational satellite system (GLONASS). GNSS-based navigational systems are used for navigation and positioning applications. In the GPS navigational system, GPS receivers receive satellite positioning signals transmitted from a set of up to 32 satellites deployed in 12-hour orbits around the earth and dispersed in six orbital planes at an altitude of 10,900 nautical miles. Each GPS satellite continuously transmits two spread spectrum, L-band signals: an L1 signal having a frequency f1 of 1575.42 MHz, and an L2 signal having a frequency f2 of 1227.6 MHz. The L1 signal from each satellite is modulated by two pseudo-random codes, the coarse acquisition (C/A) code and the P-code. The P-code is usually encrypted, with the encrypted version of the P-code referred to as the Y-code. The L2 signal from each satellite is modulated by the Y-code. The C/A code is available for non-military uses, while the P-code (Y-code) is reserved for military uses.
A GPS receiver usually determines its position using the travel time of a coded radio GPS signal received from a particular satellite. The receiver can generate or maintain a set of codes identical to those codes (e.g., the Y-code or the C/A-code) transmitted by the satellite. The receiver can compute the travel time of the received coded radio GPS signal by determining a time shift between its own codes and the codes transmitted by the satellite. The receiver can multiply the computed travel time by the speed of light to determine the distance between the transmitting satellite and the receiver. The receiver can receive GPS signals from four or more satellites and determine how far it is from each of the satellites. Using its distance from the various satellites, the receiver can accurately determine its position in three dimensions (e.g., longitude, latitude, and altitude). A conventional GPS receiver typically utilizes the fourth satellite to accommodate a timing offset between the clocks in the receiver and the clocks in the satellites. The GPS signals also include a 50 bit per second data stream or data message which is superimposed on the C/A and Y-codes. Once the receiver has matched its code to the code in the GPS signal from a particular satellite, the receiver can decipher the data message. The data message can include navigational data related to the position of the satellite, including geometric dilution of precision (GDOP) parameters. Additionally, the data message can include accurate time data, ephemeris data, and data related to the health status of the satellite. The GPS satellites utilize code division multiple access techniques so satellite signals do not interfere with each other. GLONASS navigational systems operate similarly to GPS navigational systems and utilize frequency division multiple access (FDMA) techniques so satellite signals do not interfere with each other.
GNSS navigational systems have tremendous benefits over other positioning and navigational systems because these systems do not rely upon visual, magnetic or other points of reference. However, conventional GNSS navigational systems are susceptible to jamming or interference by other signals. When jammed by higher power signals, the C/A-code encoded signal becomes difficult to acquire. Typically C/A-code acquisition is necessary to acquire the Y-code signal. Therefore, in the presence of jamming or interfering signals, navigation using a GNSS receiver can become unreliable.
In some applications, such as a military battle field, pseudolites can be used to enhance GNSS performance when satellite signals undergo jamming, interference, or other phenomena rendering signal reception unreliable. For example, pseudolites transceivers that are away from a jamming environment can receive GPS signals from satellites, determine their positions based on the GPS signals received from the satellites, and generate and broadcast pseudolite positioning signals that can be received by GNSS receivers. Also, a stationary pseudolite can broadcast pseudolite positioning signals to GNSS receivers within a given distance from the stationary pseudolite. The pseudolite positioning signals can allow GNSS receivers that are unable to track the GNSS satellite signals (e.g., due to jamming or other reasons) to perform relative position navigation. In other words, the GNSS receivers in such a case can determine their positions with respect to the locations of the transmitting pseudolites.

Systems and methods for absolute position navigation using pseudolites


A new cultivar of Dianthus plant named ‘WP17 PIE54’ that is characterized by a compact mounding habit, large single magenta flowers with a darker contrasting band color, blooming from May through October, with a strong, pleasant spicy fragrance, strongly glaucous blue green foliage and is suitable for use as a flowering plant in pots and containers as well as for use as a cut flower and in bouquets, is disclosed.

The present invention relates to a new and distinct cultivar of hardy Dianthus, commonly known as Garden Pink, which is grown for use as a flowering plant for pots and containers and for planting in the garden and landscape. The new cultivar is known botanically as Dianthus x allwoodii hort. and will be referred to hereinafter by the cultivar name 'WP17 PIE54'.
'WP17 PIE54' is a complex hybrid plant that is the product of a long-term breeding program conducted in a cultivated area of Houndspool, Dawlish, Devon, United Kingdom. 'WP17 PIE54' was selected in 2009 for its large single vibrant magenta flowers, its strong, pleasant spicy fragrance, and glaucous blue-green foliage.
'WP17 PIE54' arose and was selected as a seedling which resulted from the controlled pollination of two of the inventor's prior selections of Dianthus. The male parent is Dianthus code name 'GI52' (unpatented and unreleased) and the female parent is Dianthus code name 'Tricia' (unpatented and unreleased). The male parent and female parent had both been grown within the inventor's stock of breeding lines.
Asexual reproduction of 'WP17 PIE54' was first accomplished in 2009 in a cultivated area of Houndspool, United Kingdom using the propagation method of shoot cuttings. 'WP17 PIE54' has been determined to be stable and reproduces true to type in successive generations of asexual propagation.


A cache-memory system comprising a processor bus for communicating between an associated processor (CPU) and associated cache-memory management units (CMMUs) communicating through the processor bus and each having a single cache address tag for addressing one associated cache; and each one of the plurality of CMMUs communicating through an associated one of a plurality of memory buses with a main memory of the system.

1. Field of the Invention
The present invention relates to digital computers in general, and to computer memory organization in particular. More particularly still, it relates to organization and architecture of cache-memory systems.
2. Prior Art of the Invention
The closest prior art known to the present invention is disclosed in detail in Motorola Inc.'s Users Manual of an integrated circuit known as the MC88200 cache/memory management unit or CMMU. This manual is incorporated herein by reference.
An excellent background paper on the general subject of the present invention by Alan Jay Smith is entitled "Problems, Directions and Issues in Memory Hierarchies" published in the Proceedings of the Eighteenth Annual Hawaii International Conference on System Sciences, 1985. Section 2 of this paper concerns cache memories and is particularly relevant.
Another important background paper by the abovementioned author entitled "Line (Block) Size Choice for CPU Cache Memories" was published Sep. 9, 1987, in the IEEE Transactions On Computers, Vol. C-36, No. 9.
Cache memories temporarily hold portions of the contents of the main system memory which hopefully have a high probability of current use by the CPU or processor. In practice, the cache memory holds recently used contents of main memory. Thus the three basic performance parameters are "hit access time" "miss access time" and "hit ratio." Hit access time is the time to read or write cache memory, when the data is in the cache memory. Miss access time is the time to read main memory when the requested word is not in the cache memory. Hit ratio is the probability of finding the target data in the cache, and directly affects memory traffic making memory or bus bandwidth a critical and limiting resource in RISC (Reduced Instruction Set Computer) microprocessor systems (Smith, 1985).
Memory traffic consists of two components: fetch traffic and write or copyback traffic. The memory fetch traffic increases with line size in the cache, while generally the "miss ratio" (opposite of "hit ratio") declines with increasing line size. Memory traffic also increases with miss ratio.

Cache-memory architecture comprising a single address tag for each cache memory


A pulp molding negative angle container comprises a conical pulp container which is open on the upper end. The inner wall of the open end of the pulp container has a separation space which is inclined downwards and set outwards. A protruding shoulder is provided on the outer wall of the open end of the pulp container, wherein the outer diameter of the protruding shoulder is larger than the inner diameter of the hole on the open end. When two pulp containers are nested over each other, the protruding shoulder is placed on the upper hole of the open end and a separation gap is formed between the separation space on one pulp container and the outer wall on the other pulp container.

Pulp molding containers include industrial pulp molding containers and food pulp molding containers.
The current structure of the pulp molding container is that: its upper end has a conical container with an open end and wall thickness of the conical container are the same. When at least two conical containers are overlapped or nested with each other and then the conical containers are separated one by one, it takes a lot of effort to be able to detach the two upper and lower adjacent conical containers, that is, it is difficult to separate the existing pulp molding container after being stacked.
In order to solve the above technical problems, many inventors have designed a structure in which a convex rib is provided at the open end of a conical container or a convex rib is provided at the bottom of the conical container, which reduces the difficulty of separation to a certain extent. However, the above problems of the prior art still fail to be completely solved.
Secondly, the Chinese patent application discloses a coffee cup cover made of pulp molding process [Application No.: 201120261714.X], which comprises a top wall of the cup cover and a surrounding wall connected with the top wall, wherein the bottom surface of the top wall of the cup cover is provided with a convex ring which is protruding downwards and can abut the inner sidewall of the coffee cup, the inner sidewall of the cup cover's surrounding wall is provided with an annular convex portion which is protruding inwards and can abut the outer sidewall of the coffee cup. A space is formed between the convex ring and annular convex portion for clamping the wall of the coffee cup. The coffee cup cover can prevent the user from squeezing the coffee cup lid excessively, which results in the deformation of the coffee cup cover and the coffee cup body to overflow the coffee and burn the user. When the user drinks coffee, the user can direct the mouth to the liquid outlet to enjoy coffee. It is more safe, convenient and practical as well as avoids coffee leakage during the process of drinking.
Although the above solution has many advantages, the above solution still fails to completely solve the above technical problems. Therefore, it is desired to develop a pulp container capable of solving the above technical problems.

Pulp molding negative angle container and its processing method