A nutritional supplement composition for normalizing impaired or deteriorating neurological function in humans is composed of: at least one agent which promotes synthesis of ATP and/or creatine phosphate in the body, at least one antioxidant for scavenging free radicals in at least one pathway in the body; at least one agent for normalizing or maintaining membrane function and structure in the body; at least one agent for normalizing or maintaining normal neurotransmitter function in the body; at least one agent for down-regulating cortisol action; and at least one agent for suppressing activation of apoptotic pathways in the body. The composition may further contain one or more of: at least one agent for suppressing inflammation in the body; at least one agent for normalizing or maintaining vascular wall function and structure in the body; at least one agent for normalizing or maintaining function of nerve growth factors and/or neurotropic factors in the body; at least one agent for suppressing toxic metal ionic effects; at least one agent for normalizing or maintaining methyl metabolism in the body; at least one agent for normalizing or maintaining metabolism of insulin and glucose in the body; and at least one agent for up-regulating activity of heat shock proteins in the body. A method for normalizing impaired neurological function in humans modulating nutrient partitioning in a human involves administering the aforementioned composition to the human, preferably on a daily basis, for a therapeutically effective period of time. Preferably, the method further involves having the human follow a stress reduction program, and/or a cognitive retraining program, and/or a dietary program designed to maximize insulin and glucose metabolism.

This invention relates to compositions and methods for normalizing impaired or deteriorating neurological function in humans. More particularly, this invention relates to compositions and methods which use a holistic approach for normalizing impaired or deteriorating neurological function in humans.
For various reasons, approximately 20-50% of all the populations of global cultures experience varying types and degrees of nervous system deterioration and/or dysfunction.
Impaired or deteriorating neurological functions are manifested by a variety of conditions spanning a spectrum of states of nervous system dysfunction. Non-limiting examples of such conditions include memory deterioration, certain behavioral problems, attention deficit disorder (ADD), attention deficit hyperactivity disorder (ADHD), other inattention and/or hyperactivity syndromes, dementia or cognitive decline of multiple etiologies, various genetic disorders (e.g., Downs Syndrome, Fragile X Syndrome, etc.), central nervous system (CNS) trauma, intoxications (acute and chronic) or poisoning, auto-immune mechanisms, anoxic-ischemic conditions, neurodegenerative disorders, metabolic afflictions of the nervous system, vascular insults, hypertensive encephalopathy, rheological disorders, demyelination, cerebral edema, inflammatory neuronal conditions, learning disabilities, impulsive behavior, specific emotional or mood problems, difficulty functioning under pressure, various latrogenic conditions, infections, eleptogenic foci and congenital brain malformations.
Methods and compositions for treating neurological dysfunction are known in the art.
U.S. Pat. No. 6,020,139 to Schwartz et al. is directed to methods for identifying a therapeutic composition or protocol which ameliorates a disease or undesired condition in a subject, wherein the methods rely upon recognition of the existence of and interconnections between eight S-adenosyl-L-methionine (SAM) pathways. The methods involve determining the presence of the disease or condition in a subject; identifying any abnormalities in each of the eight SAM pathways by determining concentrations of metabolites and/or concentrations or activities of enzymes and/or levels of cellular functions, that are participants in or are results of SAM pathways, thereby obtaining a data set of the differences of the concentrations, activities and/or levels from corresponding normal concentrations, activities and/or levels; analyzing the data set in such a way as to determine which of the metabolites, enzymes and/or cellular functions of the SAM pathways is a causative agent of the differences in concentrations, activities or levels; and identifying a therapeutic composition or protocol which acts to restore the pathways toward normality so as to ameliorate the disease or condition. Diseases or conditions which the methods are designed to treat include Alzheimer's disease, Parkinson's disease, and atherosclerosis. The therapeutic composition used in the invention may be composed of a SAM metabolite or an agent that influences the activity of a SAM pathway or a pathway that is modulated by a SAM pathway. The patent lists compounds the presence and levels of which should be measured and/or monitored in various diseases. For example, for Alzheimer's disease, metabolites, enzyme activities and/or cellular functions which should be monitored include one or more methylation levels, SAM, biotin, polyamines, folate, and vitamin B2. For Parkinson's disease, the metabolites or enzyme activities include polyamines, non-specific N-methylase, acetyl-L-carnitine, Ca2+/calmodulin-dependent protein kinase II, lysolecithin, sphingomyelin, SAM and vitamin B12. For atherosclerosis, the metabolites, enzyme activities, or cellular functions involve methylation levels, polyamines, acetyl-L-carnitine, calmodulin, and essential phospholipids.
U.S. Pat. No. 5,668,117 to Shapiro discloses a method and composition for treating neurological diseases, wherein the composition contains at least one carbonyl trapping agent alone or in combination with a co-agent or medicament. According to the Shapiro patent, the method and composition can be used to treat, e.g., Alzheimer's disease, Parkinson's disease, hereditary motor and sensory neuropathies, age-onset neurological deterioration, multiple sclerosis, diabetic polyneuropathy, Down's Syndrome, olivopontocerebellar atrophy, amyotrophic lateral sclerosis, alcoholic polyneuropathy, and tinnitus (nerve deafness). According to the patent, co-agents which can be used in the treatment of Parkinson's disease include, e.g., carbidopa and levodopa compositions, dopamine agonists, anticholinergic medications, antihistamines, tricyclic antidepressants, serotonin reuptake inhibitor antidepressants, beta blocker agents, selegiline, D-cycloserine, neurotransmission enhancer drugs, peripheral decarboxylase inhibitors other than carbidopa, N-methyl-D-aspartate glutamate receptor antagonists, tacrine, 9-amino-1,2,3,4-tetrahydroacridin-1-ol, lazabemide, tiapride, and antioxidant agents. The patent teaches that co-agents useful in treating Alzheimer's disease include vasodilator or other nootropic direct brain metabolic enhancer drugs (e.g., idebenone, vinpocetine, and the like), neurotransmission enhancer drugs, tiapride, psychotherapeutic drugs, acetylcholinesterase inhibitors (e.g., huperzine A), calcium channel blocker agents, biogenic amines, antirage drugs, minor tranquilizers, angiotensin-converting enzyme inhibitors, agents which may enhance acetylcholine synthesis, storage or release (e.g., phosphatidylcholine), postsynaptic receptor agonists, ganglioside, specific monoamine oxidase-A inhibitors, N-methyl-D-aspartate glutamate receptor antagonists, nonsteroidal anti-inflammatory agents, selegiline, thiamine, anfacine, sulbutiamine, antioxidant agents, specific monoamine oxidase-B inhibitors, linopirdine, D-cycloserine, and serotonergic receptor antagonists. The Shapiro patent also discusses the use of para-aminobenzoic acid, DL-methionine, vitamin E, panthotenic acid, beta-carotene, selenium, vitamin B1 and a tablet containing folic acid, vitamin B2, vitamin B6, biotin, vitamin B1, niacin, Vitamin B12 and panthotenic acid, to treat a human suffering from hereditary motor and sensory neuropathy.
U.S. Pat. No. 4,812,447 to Roberts discloses a method for treating nervous system deterioration associated with aging and Alzheimer's disease, involving administering a therapeutically effective amount of dehydroepiandrosterone (DHEA) or its sulfate and, optionally, a potassium channel antagonist. The Roberts patent is further directed to pharmaceutical compositions containing DHEA, alone or in combination with a potassium channel antagonist, e.g., 4-aminopyridine. The patent teaches that DHEA facilitates the growth of nervous system tissue.
U.S. Pat. No. 5,104,880 to Kozikowski discloses the use of huperzine A analogs as acetylcholinesterase inhibitors which may be useful for treating memory and learning disorders such as, e.g., Alzheimer's disease, myasthenia gravis, and other age-related memory impairments.
U.S. Pat. No. 5,716,614 to Katz et al. discloses a pharmaceutical composition for treating diseases relating to severe deterioration of the central nervous system (e.g., dementias, neurodegenerative disorders, neurological diseases, malignant brain tumors, and inborn errors of metabolism), wherein the composition contains a complex of a polycationic carrier (e.g., poly-lysine, poly-arginine, or poly-ornithine) coupled to eicosapentaenoic acid or docosahexaenoic acid moities, a biologically active agent and one or more additional docosahexaenoic acid moieties. The one or more additional docosahexaenoic acid moieties are selected from docosahexaenoic acid-containing phosphatidyl serine, docosahexaenoic acid-containing phosphatidyl ethanolamine, and phosphatidyl carnitine.
Japanese Patent JP401221316A discloses a cerebral circulatory metabolism-improving agent composed of idebenone and vinpocetine.
Japanese Patent JP410053526A discloses a composition for treating, among other things, nervous symptoms caused by Alzheimer's disease, wherein the composition contains a vitamin B1 derivative or its salt and idebenone.
U.S. Pat. No. 6,063,820 to Cavazza is directed to a medical food for diabetics which includes linolenic acid, alkanoyl-L-carnitine, and, optionally, coenzyme A, antioxidants (e.g., lipoic acid, resveratrol, glutathione, selenium, and the like), taurine, pantethine, vitamin A, vitamin E, vitamin B1, vitamin B6, vitamin B12, magnesium, calcium, zinc, selenium, chromium, and vanadium. The patent teaches that peripheral neuropathies of the autonomic nervous system may be among the late complications of disease.
U.S. Pat. No. 6,117,872 to Maxwell et al. discloses a composition for enhancing exercise performance by augmenting endogenous nitric oxide production or activity, the composition containing L-arginine, L-lysine, and, optionally, antioxidants (e.g., vitamins A, C and E, cysteine, glutathione), or other factors which may enhance endothelial-derived nitric oxide (EDNO) synthesis or activity, such as folic acid, biopterins, B complex vitamins (specifically, B6 and B12), flavonoids (e.g., resveratrol), carotenoids (e.g., lycopene, phytoestrogens), L-carnitine, L-creatine, and L-taurine.
Current sophisticated investigative techniques have facilitated ever greater insight into the subtle abnormalities responsible for the diverse neurological conditions mentioned previously herein. As knowledge of these complex mechanistic pathways of disease has accumulated, many potential sites have become available for possible therapeutic intervention. The basic pathways which either individually or collectively are responsible for neurological deterioration or dysfunction may generally be classified as follows:                1) bioenergetics or the intrinsic ability of individual neurons or neural networks to generate and/or utilize an adequate, continuous supply of readily usable fuel to power the ongoing needs of every individual cell under steady state as well as adverse conditions;        2) nitrogenous and/or oxidative stress;        3) apoptosis;        4) maintenance of cellular and subcellular membrane structure and function, fluidity, permeability characteristics, receptor and channel activity, and signal transducing capability;        5) neurochemistry and neurotransmission;        6) vascular wall integrity and function;        7) neurotransmission;        8) protection of nuclear and mitochondrial DNA;        9) maintenance of neuronal plasticity;        10) inflammation;        11) nerve growth factors;        12) metal ionic effects;        13) aberrant methyl metabolism;        14) cortisol (glucocorticoid) activity;        15) insulin action; and        16) stress protein activity.

Composition and method for treating impaired or deteriorating neurological function


An improved probe tip for making electrical contact with a solder ball of an integrated circuit device such as a BGA includes two perimeter point structures having interior angled edges which form a front hollow region in the probe tip for receiving the solder ball of a BGA. Each of the interior edges of the point structures includes an angled medial contact zone which tangentially contacts the solder ball received in the hollow region of the tip to produce minimal distortion of the solder ball. The method of the invention permits electrical contact with a solder ball of a BGA with minimal deformation of the solder ball. In accordance with the method, the contact between the probe tip and the solder ball is limited to tangential contacts around the solder ball below the solder ball's apex.

The present invention generally relates to testing of integrated circuit (IC) devices, and more particularly to the design of pogo-pins used in socket test probes, contactors and the like for achieving reliable electrical contact with the solder ball contacts of an IC device. The invention has particular application in the testing of or interfacing with ball grid array (BGA) devices wherein electrical contact must be achieved with an array of densely packed solder ball contacts having spherical or hemispherical contact surfaces.
When testing IC devices a reliable electrical interface must be achieved between the test probes and the IC device in order to produce reliable test results. Testing devices typically utilize an array of individual conductive probes called "pogo pins", which provide a compliant contact array to electrically interface with the I/O contacts of the IC device. Generally, the tips of the pogo pins are designed to achieve efficient electrical contact between the pogo pin tip and the tested or contacted device, and to minimize the introduction of contact resistance in the signal path. However, little or no regard is given to the possible distortive effects of the probe on the I/O contacts themselves.
As IC packaging has become smaller, and I/O densities higher, ball grid arrays (BGAs) have emerged as an alternative IC packaging for integrated circuit devices having extended pin contacts. In BGA devices, the I/O contacts are provided in the form of an array of densely packed solder balls, which permit the device to be surface mounted to a circuit board. In addition to the efficiencies of surface mounting, BGAs permit smaller packaging for higher circuit densities and greater functionality with reliable electrical and thermal performance. On the other hand, with smaller BGA sizes come problems with testing. Specifically, in very small devices, known as micro-BGAs, solder balls are very small and have greatly reduced surface areas. In these devices the deformation of the solder balls caused by the probe contact is relatively large compared to the overall size of the balls, and this can detrimentally affect both the inspection and assembly of the device onto a printed circuit board. For example, excessive deformation of the solder balls can cause devices to be rejected during quality control procedures which may employ laser inspection techniques. Also, surface deformations can lead to problems in the integrity of the solder joints between the micro-BGA and the circuit board when the micro-BGA is mounted to the board.
Heretofore, probes used in the testing of BGA and micro-BGA devices have had probe tips with single or multiple points which dig into and around the apex of the BGA's solder balls. Such probe tips generally leave deep incision marks in the solder ball contacts and also deform the solder balls from their original shape. Furthermore, with such tip designs separation of the solder balls from the probe tips requires a degree of force that is generally undesirable. One reason for this is the relatively deep penetration of the points of the probe tips into the solder balls which causes the solder balls and probe tips to come into contact over a substantial surface area. Also, such probe tips are typically coated or plated with metallurgy, such as gold, that readily fuses or migrates into the soft solder material of a solder ball contact.
The present invention overcomes the problems associated with surface deformation of the solder ball contacts of a BGA device caused when the BGA's solder ball contacts are contacted by external conductive probes. The present invention further overcomes problems associated with the release force necessary to separate the BGA devices from external probes used to make electrical contact with such devices.

Probe tip and method for making electrical contact with a solder ball contact of an integrated circuit device


Olefinically unsaturated adducts of propylene on polyunsaturated fatty acids with 18 to 22 carbon atoms or on esters of these fatty acids with C.sub.1 -C.sub.36 alkanols in molar ratios of propylene to fatty acids or fatty acid esters in the range from 1:1 to 2:1, obtainable by reacting the fatty acids or fatty acid esters with propylene at elevated temperature and pressure in the presence of compounds of the transition metals Ru, Rh, Pd, Ir and Pt as catalysts to form an olefinically unsaturated adduct.

1. Field of the Invention
This invention relates to olefinically unsaturated adducts of propylene with polyunsaturated C.sub.18-22 fatty acids or esters thereof with C.sub.1-36 alkanols in molar ratios of propylene to the fatty acids or fatty acid esters of 1:1 to 2:1 obtainable by reaction of the fatty acids or fatty acid esters with propylene at elevated temperature and elevated pressure in the presence of compounds of transition metals from the group consisting of Ru, Rh, Pd, Ir and Pt as catalysts.
2. Statement of Related Art
Fatty acids branched in the alkyl chain of the Guerbet acid type, obtainable by "guerbetization" of the corresponding fatty alcohols and oxidation of the Guerbet alcohols to the corresponding acids, are technologically interesting intermediate products because they, or their alkyl esters, have distinctly reduced pour points by comparison with the corresponding unbranched isomers. However, the production of Guerbet acids is technologically complicated and can only be carried out with unsatisfactory yields. Accordingly, there has been no shortage of attempts to produce corresponding fatty acid derivatives branched in the alkyl chain from fatty acids or esters thereof. A typical example of this is the layer-silicate-catalyzed dimerization of fatty acids. Unfortunately, considerable quantities of trimeric fatty acids and methyl-branched fatty acids, so-called isofatty acids, are also formed in this reaction. Another, albeit complicated, process gives branched fatty acid derivatives from conjuene fatty acids in the trans-trans form with activated dienophiles under the conditions of a Diels-Alder reaction; for example, a branched C.sub.21 dicarboxylic acid can be obtained in this way from linoleic acid and acrylic acid, of cf. U.S. Pat. No. 3,734,859, U.S. Pat. No. 3,753,968, DE-B 2 253 930. Other branched fatty acid derivatives have been obtained by thermal or acid-catalyzed addition of activated enophiles onto unsaturated fatty acid derivatives. For example, maleic anhydride can be added onto oleic acid in the presence of an acid as catalyst in yields of up to 70%, cf. Fat. Sci. Technol., 1, 1 (1988). However, the presence of more than one carboxyl group in the reaction products mentioned above has often proved to be troublesome.
Finally, attempts have also been made to add saturated hydrocarbons onto fatty acids by heat-initiated radical addition of saturated hydrocarbons onto fatty acids. The addition of cyclohexane onto oleic acid methyl ester at 340.degree. C./200 bar gives alkyl-branched fatty acids with 70% selectivity, but in a yield of only 2.8%, cf. J. O. Metzger et al., Fat. Sci. Technol. 1 (1989), 18.

Olefinically unsaturated adducts of propylene with polyunsaturated fatty acid or fatty acids esters, a process for their production and their use


The present invention may manufacture a composite pipe by forming an adhesive layer and a resin layer on an outer surface of a metal pipe, and although the composite pipe is wound in a ring shape after the composite pipe is manufactured, a circular cross sectional shape may be maintained without deformation, and after the composite pipe is straightened for the purpose of construction, separation or buckling may be prevented, resulting in excellent transportability and constructability of a product.

Generally, a high corrosion resistant metal pipe such as a stainless steel pipe has many advantages, but has a high unit cost of production resulting from use of a high priced material such as stainless steel, and has many difficulties in construction due to forming limitations in bending etc., and can be made straight only.
Also, a metal pipe manufactured in a straight shape has predetermined lengths for delivery, and an operation of connecting the metal pipes in a construction site requires considerable amounts of components, manpower, and time.
Also, when a metal pipe is buried in the ground, the metal pipe is inevitably susceptible to soil corrosion and electric corrosion etc.
Meanwhile, a resin pipe has a high corrosion resistance, a light weight, good constructability, and a low cost, but has a leakage risk due to separation of a connected portion caused by contraction and expansion with temperature changes and is vulnerable to pressure. Meanwhile, when manufacturing a resin pipe, extrusion is performed with an outer diameter of a resin pipe being slightly greater than a desired outer diameter, and the outer diameter is reduced through a sizing process during cooling to meet the density and surface requirements.
A metal resin composite pipe includes, as shown in FIGS. 1 and 2, a metal pipe 1 and a resin layer 5 formed on an outer surface of the metal pipe 1. A configuration and a manufacturing method of this metal resin composite pipe 10 is disclosed in Korean Patent No. 10-1094185.
The metal pipe 1 has a direct contact with a fluid flowing therethrough, and is made from a thin plate metal such as, for example, stainless steel, and thus has a high corrosion resistance. The resin layer 5 surrounds the metal pipe 1, and a thickness of the resin layer 5 is even greater than a thickness of the metal pipe 1. The resin layer 5 is made from a resin having a high corrosion resistance and a low cost. Accordingly, the metal resin composite pipe 10 has advantages of a high corrosion resistance to a fluid flowing therethrough, a high corrosion resistance to soils, and a low cost.
However, to deliver the metal resin composite pipe 10 to a construction site after manufacturing the metal resin composite pipe 10, the metal resin composite pipe 10 needs to be produced into a straight pipe having a predetermined length for the convenience of delivery, similar to a metal pipe. However, to use a straight pipe in a construction site, connecting the composite pipe 10 is required, and this connection operation involves considerable amounts of components, manpower, and time.
Accordingly, there is a need to manufacture the metal resin composite pipe 10 with a longer length while improving delivery performance.
To solve this problem, there was a need for production and supply of the metal resin composite pipe 10 by winding the metal resin composite pipe 10 circularly on a winder.
However, it is almost impossible to manufacture the metal pipe or the metal resin composite pipe 10 by winding in a ring shape due to characteristics of a material. To produce a pipe wound in a ring shape, development of a technique for winding the pipe while maintaining a circular cross section of the pipe is critical. Further, in view of storage and transportation of a product, minimizing the radius of curvature as much as possible while maintaining the circular cross section of the pipe was a problem that has to be solved. However, generally, when a bending force greater than or equal to an elastic limit is applied to the metal pipe to obtain a minimum curvature radius, a result is a deformation of the circular cross sectional shape or a folding of the pipe due to characteristics of steel, which cause a deformation of the pipe.
Meanwhile, as described in the foregoing, the metal resin composite pipe 10 is manufactured by coating an outer surface of the metal pipe 1 with a resin. The coating is implemented by a coating mold unit.
As shown in FIG. 3, a coating mold unit 20 includes an inner dice 21, an inner die lip 23 disposed at the rear of the inner dice 21, an outer die lip 25 disposed at the rear of the inner die lip 23, and an outer dice 27 surrounding the outer die lip 25.
The metal pipe 1 (not shown in FIG. 3) passes through the inner dice 21, the inner die lip 23, and the outer die lip 25 in a sequential order. An adhesive resin (not shown) is extruded on an outer surface of the metal pipe 1 through an adhesive resin injection hole 24a, and a resin is extruded through a resin injection hole 25a.
Meanwhile, as described in the foregoing, when manufacturing a resin pipe, extrusion is performed with an outer diameter of a resin pipe being slightly greater than a desired outer diameter and the outer diameter is reduced through a sizing process during cooling to meet the density and surface requirements.
However, because the metal resin composite pipe 10 includes the metal pipe 1 embedded therein, the sizing process is infeasible, resulting in a low surface quality of the composite pipe 10. When an outer diameter of the composite pipe 10 is greater than an inner diameter S1, a resin flows back and remains in a carrier within an extruder. When the outer diameter of the composite pipe 10 is less than the inner diameter S1, an outer surface of the resin layer 5 fails to contact an inner wall of the outer die lip 25 so that a surface polishing effect is not obtained, and as a result, the resin layer 5 cannot have an proper density and the surface of the resin layer 5 becomes rough, which cause a poor quality.

Methods for manufacturing metal-resin composite pipe that can be easily wound into ring shape


An object of the present invention is to provide a method for producing a membrane electrode assembly with excellent electrode transfer ability to electrolyte membrane. Disclosed is a method for producing a membrane electrode assembly, the assembly comprising an electrolyte membrane and an electrode which are attached to each other, the method comprising: a hot pressing step in which an electrolyte membrane and an electrode, the electrode comprising an electroconductive material and an electrolyte resin and being formed on a flexible substrate, are hot pressed to produce a laminate in which the electrolyte membrane, the electrode and the flexible substrate are laminated in this order, and a bending step in which the laminate is bent so that the flexible substrate side becomes concave, thereby removing the flexible substrate from the electrode.

In fuel cells, a fuel and an oxidant are supplied to two electrically-connected electrodes to electrochemically oxidize the fuel, thereby converting chemical energy directly to electrical energy. Unlike thermal power generation, fuel cells are not limited by the Carnot cycle; therefore, they show high energy conversion efficiency. A fuel cell generally comprises a stack of fuel cells, each having an electrolyte layer sandwiched by a pair of electrodes as the basic structure, i.e., a membrane-electrode assembly as the basic structure.
Electrodes provided on both surfaces of an electrolyte membrane generally comprise an electroconductive material and an electrolyte resin (ionomer), the electroconductive material carrying a catalyst. An electrode can be attached to an electrolyte membrane by the following methods, for example: (1) a method of applying an electrode ink to a surface of an electrolyte membrane and drying the same, the ink comprising a catalyst-carrying electroconductive material and an electrolyte resin; and (2) a method of transferring an electrode to an electrolyte membrane by hot pressing, the electrode comprising a catalyst-carrying electroconductive material and an electrolyte resin.
Concrete examples of the above method (2) include those disclosed Patent Literatures 1 to 3.
For example, the method disclosed in Patent Literature 1 is a method for producing a membrane electrode assembly, comprising a step of transferring a catalyst electrode to at least one surface of an electrolyte membrane, the catalyst electrode comprising carbon nanotubes and an ionomer and being formed on a substrate.

Method for producing membrane electrode assembly


A packaged medicine-filled container has a resin-made medicine-filled container in which a medicine is housed, a sealed packaging body in which the medicine-filled container is housed, and an oxygen scavenger housed inside the packaging body. The packaging body is hardly oxygen-permeable. Both a moisture-dependent type oxygen scavenger and a self-reacting type oxygen scavenger are used as the oxygen scavenger.

A resin-made medicine-filled container body housing a medicine in a resin-made container thereof such as a prefilled syringe, an ample, and the like is used. To stabilize the medicine filled inside the container body, the medicine-filled container housed inside a sealed packaging body is also used. According to the disclosure made in Japanese Patent Application Laid-Open Publication No. 2006-16053 (patent document 1), to stabilize the medicine, the oxygen scavenger is housed inside the packaging body of the packaged medicine-filled container body.

This patent is subject to a terminal disclaimer.


A pitch-based carbon or graphite fiber having a leafy lamella arrangement in at least 30% of the fiber cross-sectional area and having a tensile strength of at least 300 kg/mm.sup.2. The fiber is prepared by melt-spinning an optically anisotropic pitch having an optically anisotropic phase content of at least 50% through a spinneret in which at least one central line distance in a spinning hole simultaneously satisfies the following requirements I and II, EQU Ln<10 I EQU 1.5.ltoreq.Ln/Wn.ltoreq.20 II. wherein Ln stands for central line distances in mm in the spinning hole and Wn stands for wetted perimeter widths in mm in the spinning hole, and infusibilizing and carbonizing the formed pitch fiber.

(1) Field of the Invention
The present invention relates to high-strength, high-modulus, pitch-based carbon or graphite fibers having a novel peculiar internal structure and a process for the preparation thereof.
(2) Description of the Related Art
The present invention relates to a process for the preparation of high-strength high-modulus pitch type carbon fibers having a novel peculiar internal structure.
At the beginning, carbon fibers were prepared from rayon, but in view of the characteristics and from the economical viewpoint, at present, the carbon fibers used are mainly PAN type carbon fibers prepared from poly-acrylonitrile (PAN) fibers and pitch type carbon fibers prepared from coal or petroleum pitches. In particular, the technique of forming high-performance carbon fibers from a pitch has attracted attention in the art because this technique is advantageous from the economical viewpoint. For example, carbon fibers obtained by melt-spinning an optically anisotropic pitch and infusibilizing and carbonizing the obtained pitch fibers have higher strength and higher modulus than those of conventional pitch type carbon fibers.
It has been found that further improved physical properties can be manifested by controlling the internal sectional structure in pitch type carbon fibers (see Fuel, 1980, 60, 839 and Japanese Unexamined Patent Publication (Kokai) No. 59-53717 corresponding to U.K. Patent Application GB No. 2129825A).
As the sectional structure of pitch type carbon fibers, there can be mentioned a random structure, a radial structure, an onion structure, and a composite structure thereof. The radial structure is not preferred because cracks are readily formed and the physical properties are reduced by macro-defects. That is, the random structure in pitch type carbon fibers is practically a radial structure in which the lamella size is small, and this structure is preferred from the viewpoint of the strength, but since cracks are readily formed if drafting or quenching is insufficient at the step of preparing or spinning a pitch, the preparation conditions are considerably limited.
The onion structure is obtained by elevating the temperature of a pitch to a level higher than the temperature causing the change of the viscosity in the pitch and then spinning the pitch (see Japanese Unexamined Patent Publication (Kokai) No. 59-53717). However, in the case of an ordinary optically anisotropic pitch, the viscosity-changing temperature is higher than 350.degree. C., and therefore, the spinning stability is poor and the obtained fibers are likely to contain voids. Accordingly, it is difficult to obtain voidless fibers having an onion structure stably by melt spinning.

Pitch-based carbon or graphite fiber and process for preparation thereof


A word generation model obtains textual content and a requested topic of interest, and generates a targeted summary of the textual content tuned to the topic of interest. To do so, a topic-aware encoding model encodes the textual content with a topic label corresponding to the topic of interest to generate topic-aware encoded text. A word generation model selects a next word for the topic-based summary from the topic-aware encoded text. The word generation model is trained to generate topic-based summaries using machine learning on training data including a multitude of documents, a respective summary of each document, and a respective topic of each summary. Feedback of the selected next word is provided to the word generation model. The feedback causes the word generation model to select subsequent words for the topic-based summary based on the feedback of the next selected word.

Automatic Summarization of textual content can be used to save time for end users by providing an overview of textual content (e.g., a document or an article) which can be quickly read by the user. Conventional extractive summarization techniques extract out key phrases from the input textual content, and then select a subset of these phrases to place in the summary. Summaries generated by these conventional summarization techniques, however, are often not human like. Further, such extractive methods fall short when the length of the desired summaries is small, since this calls for ways to "paraphrase" the input content succinctly to maximize the information conveyed in the summary rather than choosing the most "informative" sentences.
Recent advances in neural networks have led to the use of recurrent neural networks to generate summaries by paraphrasing documents. However, these algorithms allow for the generation of a single summary only. While a summary is supposed to contain the essential part of information in a document, what is characterized as "essential" varies from person to person. Additionally, many documents include subject matter pertaining to more than one topic of interest, such as politics and business. For some readers, business may be the primary area of interest, while some others may be more interested in politics. In this scenario, a single summary may not suit the topic-preferences of all readers.

Generating a topic-based summary of textual content


A method and apparatus for detecting a movement direction of a target object are provided. The method comprises: acquiring a video sequence of the target object, and determining positions of the target object in a plurality of image frames of the video sequence; setting a plurality of base vectors within a coverage range of an image collection apparatus capturing the video sequence, wherein an angle between each of the base vectors and a reference vector set according to a specific scene being captured satisfies a predetermined condition; for each of the base vectors, determining a movement direction of the target object between each pair of adjacent image frames with respect to the base vector, and determining a general movement direction of the target object with respect to the base vector thereby; determining a movement direction of the target object according to the general movement directions of the target object.

Passenger flow statistics based on flow directions of persons is very important for commercial places, such as shopping malls, supermarkets and the like, to understand and adjust their business strategies. At present, a method for detecting a flow direction of a person usually sets at the entrance region of a commercial place a single image acquisition apparatus and presets a straight line therein, and then judges the flow direction of the person according to whether and in which direction the person passes through the straight line. However, in accordance with such detection method, when the movement trajectory of the person to be detected (i.e. the target object) is not regular, it is very easy to yield false negatives or false positives. On the other hand, when a commercial place is an irregular site, it may not be able to simply decide whether a person to be detected enters the commercial place or not by setting a straight line in a single image acquisition apparatus. For example, it is assumed that a certain commercial place is located on both the left and right sides of a crossroads, then turning left and turning right at the crossroads may both lead to entering the commercial place. At this point, presetting a straight line in a single image acquisition apparatus fails to detect all persons entering the commercial place.

Method and apparatus for detecting movement direction of target object


A liquid crystal panel includes a first glass substrate, a second glass substrate, a TFT formed on an internal surface of the first glass substrate, an electromagnetic induction module disposed on one side of the internal surface of the first glass substrate for receiving electromagnetic waves to generate current to provide driving current to the TFT, and wireless data receiving modules respectively set up on at least two adjacent sides of the internal surface of the first glass substrate for receiving wireless data signals to provide data to the TFT. Therefore, the present invention wirelessly transmits data and driving current to the liquid crystal panel. In hence, it does not arrange FPC on four sides of the liquid crystal panel for connecting with a PCB circuit so that a frame for protecting FPC is no need. Therefore, it achieves the LCD module with non-frame on four sides.

1. Field of the Invention
The present invention relates to a liquid crystal display (LCD) field, more particularly, to an LCD module and a liquid crystal panel thereof.
2. Description of the Prior Art
An LCD module has been broadly applied on account of advantages like lightness, slimness and low power consumption. With continuous producing development of an LCD module, there has been a trend toward an LCD module with non-frame because of its simple fashion appearance. The LCD module with non-frame means that there is none of frame over a liquid crystal glass substrate.
An LCD module with non-frame in the prior art, however, usually means three sides, not four, of the LCD module with non-frame based on the Gate On Array (GOA) technique that gate drivers directly are mounted on the glass substrate in array to get rid of traditional external gate driver IC so that it does not need an additional flexible circuit board (FPC) to guide lines, i.e. without using chip-on-film (COF). Therefore, it is unnecessary to arrange the FPC on the three sides of non-frame. Despite all that, it is still incapable of accomplishing an LCD with non-frame on four sides because it is necessary that the FPC set up on one side of the liquid crystal glass substrate connects with a printed circuit board (PCB) to input data source and driving current. As a result, it must have a frame over one side of the liquid crystal substrate to prevent the FPC on the side from damage so that it is incapable of achieving non-frame on four sides.

Shenzhen China Star Optoelectronics Technology Co., Ltd.


Quality of Service (QoS) switching method and apparatus in a mobile communication system are provided. The method includes determining, based on a total resource usage for providing a plurality of QoSs, the QoS switching relating to level adjustment of the plurality of QoSs corresponding to one of downgrade, upgrade, and grade maintenance, and adjusting levels of the plurality of QoSs according to the determined QoS switching.

1. Field of the Invention
The present invention relates to a Quality of Service (QoS) in a mobile communication system.
2. Description of the Related Art
When Quality of Service (QoS) requirements of a user requiring the QoS are not satisfied in a communication system, an adverse effect on the QoS of another user may be reduced by changing the service of the user to a low-QoS or a non-QoS and restoring the QoS when the QoS is available later.
The QoS indicates an ability or a measure for guaranteeing a particular performance in data transmission by prioritizing applications, users, or data flows. The performance of the QoS includes a minimum bit rate, delay, jitter, packet loss rate, etc. When a type of the QoS varies, the performance criteria also vary. In a mobile communication system where multiple users share limited air resources, the performance of the QoS requiring the minimum bit rate and being delay sensitive is very important in the system performance.
Conventional methods in terms of flow control and congestion control in a core network do not provide a systematic process and a method for QoS switching adapted to dynamic resource allocation and dynamic availability of resources according to a change of a radio channel quality of the user. In addition, conventional devices in terms of a scheduler of a Media Access Control (MAC) layer applies a condition for triggering the QoS switching to the QoS individually, not as a whole, or conducts the QoS switching per QoS of each user. Thus, the QoS switching is excessive and a dynamic range of the resource usage in the QoS increases.

QOS switching method and apparatus for QOS in a wireless communication system


Method of horizontal widening of angular field of view of collimating optical system using several unified ax symmetric collimating optical systems spaced out horizontally with angular fields of view of rectangular shape with their boundaries oriented horizontally and vertically and their axes are turned horizontally relative to each other so that adjacent vertical boundaries of angular fields of view of neighboring systems coincide and full angular field of view of collimating optical system is sum of angular fields of view of unified optical systems included in it and to display total virtual information collimating optical system is conjugated with two-component combiner and primary image creators e.g. LCDs are located in focal planes of unified optical systems and wide-angle panoramic collimating optical system with horizontal field of view up to 360° can be build also.

Suggested method of widening of angular field of view of collimating optical systems used in equipment of various type differs from known methods. The best known and widely applied methods of design of such optical systems are stated below.
Routine method is based on application of ax symmetric collimating optical systems with spherical optical elements and widening of angular field of view accessible for perception by operator is attained by increase of aperture of optical system at the expense of appropriate increase of size (diameters) of optical elements (lenses, mirrors, prisms, etc.). Usually the size of optical system is not crucial if it is used under steady-state conditions. There are challenges (irresistible in some cases) if large-dimension optical elements and systems are used under the restricted space conditions such as aircraft, piloted spaceship or specific surface transportation. Therefore following analysis of various methods of building of collimating optical systems concerns collimating optical systems intended for application in collimating displays installed in the aircrafts.
The displays by patents U.S. Pat. No. 6,392,812 and U.S. Pat. No. 7,391,574 could be used as aircraft displays in which collimating optical systems constructed according to given method have been applied. It follows from analysis of mentioned patents that they lack purpose and accordingly distinctive features of increase of angular field of view of collimating optical systems of displays by use of the method which could differ from the method in question. For absolute majority of collimating displays installed in modern aircrafts and designed according to this procedure the diameter of exit lenses of optical system does not exceed 150-180 mm and size of full field of view does not exceed 25. Further increase of diameter of the exit lens is undesirable since it causes increase of size and weight of display that could affect flight safety.
Another method is based on application of decent red (off-axis) non planar reflecting elements including holographic optical elements (HOE) in collimating optical systems. The main purpose of this method application is widening of angular field of view of optical system, mainly horizontally.
U.S. Pat. No. 3,940,204, U.S. Pat. No. 4,407,564, U.S. Pat. No. 5,640,275 could be cited as theoretical examples of architecture of collimating optical systems based on HOE and intended for application in aircraft collimating displays in which the size of angular field of view of collimating optical system can be increased horizontally up to 30.
In such collimating optical systems single or several HOE installed at the exit of optical system and at the same time in front of the pilot are most sophisticated and bulky optical components. Usually HOE is a non planar decent red substrate of glass with sophisticated multi-layer (or volume) hologram deposited on it providing high transparency within visual spectral range (up to 80%) and effective reflection (up to 70-80%) for the rays with fixed (operating) wave-length (usually green color) coinciding with spectral maximum of radiation of the image creator (e.g., CRT or LCD). In order to make such HOE complicated manufacturing technology is required that have to meet conditions of high vibration resistance and seismic stability and it is labor-intensive and costly and accessible only for advanced manufacturers.
It should be noted that generation and representation of only monochromatic image is implied in all known collimating displays based on HOE that causes restriction of display capabilities. It is practically impossible to use image creators based on color LCD, e.g., and accordingly to represent color information picture.
All above-stated confirms the urgency of development of alternative method of collimating optical system construction providing capability of widening of angular field of view of optical system horizontally up to parameters that are equal or exceeded to those parameters that have been attained when using HOE. At the same time manufacturing of collimating optical systems developed by use of alternative method must not be complicated and costly.

Method of widening of angular field of view of collimating optical systems


A gas sensor element including a composite ceramic layer including a plate-shaped insulating portion containing an insulating ceramic and having a through hole formed therein and a plate-shaped electrolyte portion containing a solid electrolyte ceramic and disposed in the through hole; and a first conductor layer extending continuously from a first insulating surface on one side of the insulating portion to a first electrolyte surface of the electrolyte portion facing the same direction as the one side of the insulating portion. The first insulating surface is flush with the first electrolyte surface. The electrolyte portion has, on its first electrolyte surface side, an extension portion extending outward from the through hole so as to overlap the first insulating surface. Further, the thickness of the extension portion decreases toward the outer circumference of the extension portion. Also disclosed is a method of manufacturing the gas sensor element.

1. Field of the Invention
The present invention relates to a gas sensor element, to a gas sensor, and to a method of manufacturing a gas sensor element.
2. Description of the Related Art
A gas sensor is used for combustion control for an internal combustion engine. The gas sensor includes a gas sensor element that outputs a detection signal indicative of the concentration of a particular component (e.g., oxygen) of exhaust gas emitted from the internal combustion engine. For example, a gas sensor element described in Patent Document 1 includes alumina sheets each having a through hole extending in a thickness direction, and a zirconia filling portion having oxygen ionic conductivity is embedded in each of the through holes. A pair of electrodes are disposed on opposite surfaces of each zirconia filling portion. Patent Document 1 shows a structure in which the thickness of the zirconia filling portion is made larger than the depth of the through hole (i.e., the thickness of the alumina sheet) such that the zirconia filling portion protrudes from the through hole, and the size of the protruding portion of the zirconia filling portion is made larger than the opening area of the through hole.
[Patent Document 1] Japanese Patent Application Laid-Open (kokai) No. 2010-145214
3. PROBLEMS TO BE SOLVED BY THE INVENTION
Generally, wiring layers (conductor layers) for outputting an electric signal from the electrodes disposed on the zirconia filling portion to the outside of a sensor element are disposed on the alumina sheet. However, in Patent Document 1, there is no disclosure concerning such wiring layers. With the structure of the zirconia filling portion shown in Patent Document 1, when a wiring layer is disposed so as to extend from an electrode on the zirconia filling portion to an edge portion of the alumina sheet, the wiring layer may be cracked or broken at an edge of the zirconia filling portion that is located outside the through hole. Therefore, there is a need for a technique capable of suppressing the occurrence of cracking or breakage of a conductor layer including an electrode and a wiring layer in a gas sensor element including an insulating portion having a through hole and an electrolyte portion embedded in the through hole.

Gas sensor element, gas sensor, and method of manufacturing gas sensor element


A method of fabricating a mask ROM that includes forming a plurality of buried bitlines in an upper surface of a semiconductor substrate at fixed intervals and a plurality of wordlines on the semiconductor substrate perpendicular to the buried bitlines; forming an interlayer insulating film having a bitline contact hole on an entire first surface of the semiconductor substrate inclusive of the wordlines; forming a metal pattern in contact with the buried bitlines through the contact hole; forming a ROM code mask on the metal pattern; forming a plurality of ROM code ion implantation regions by selectively etching the interlayer insulating film with the ROM code mask; and forming a protection film on an entire second surface of the semiconductor substrate by implanting ROM code ions in the ROM code ion implantation regions.

1. Field of the Invention
This invention relates to a method of fabricating a semiconductor device, and more particularly, to a method of fabricating a mask Read Only Memory (ROM), in which a coding step is adjusted for reducing turn-around time.
2. Discussion of the Related Art
Erasure of and writing on a mask ROM, a nonvolatile memory, is, in general, not possible since code ion implantation, i.e., programming, is done in a device fabrication process. Data programming on the mask ROM is done by using NOR contact, NOR type ion implantation, or NAND type ion implantation.
A conventional method of fabricating a mask ROM will be explained with reference to FIGS. 1 and 2A through 2D. Referring to FIG. 1, a conventional method of fabricating a mask ROM begins with an initial fabrication step of a general ROM 100, i.e., bitlines for use as a drain/source and wordlines for use as gates are formed. This initial step 100 starts with forming a plurality of buried bitlines 14 in an N-type semiconductor substrate 11 having a P-type well 12 formed therein and a plurality of wordlines 16 vertical to the buried bitlines 14. In a ROM code lithography step 101, according to custom data, a photoresist film 17 for a ROM code mask is coated, patterned, and exposed. In a code ion implantation step 102, code ions, such as Boron ions, are selectively implanted. In a first deposition step 103, a Chemical Vapor Deposition (CVD) oxide film 18 is deposited on the wordline 16. In a second deposition step 104, a Boron Phosphorous Silicate Glass (BPSG) oxide film 19 is deposited. In a contact lithography step 105, the BPSG oxide film 19 is removed selectively to form a contact (not shown). In a metal etch step 106, a metal is deposited on an entire surface, including the contact, and subjected to selective photolithography and etching to form a metal pattern 20. In a passivation step 107, a CVD oxide film is deposited on the entire surface, thereby forming a protection film i.e., passivation, (not shown). Pad lithography and etching are conducted in a pad lithography step 108. An alloy is then formed in an alloy forming step 109. A wafer yield prediction is made in a yield prediction step 110, and a wafer level circuit test is conducted in a circuit test step 111 . Since code ions are implanted in a certain region, i.e., a channel region of a cell transistor after the wordlines are formed, the conventional method 112 of fabricating a mask ROM takes approximately two weeks to complete.
Referring to FIG. 2A, an N-type semiconductor substrate 11 is lightly doped with P-type impurity ions to form a P-well 12. Then, a Local Oxidation of Silicon (LOCOS) is used to form a field oxide film 13 on a region of the substrate 11. Boron ions are implanted in a surface of the P-type well of the substrate 11 excluding the field oxide film 13 for adjusting a threshold voltage between approximately 0.9V and 1.2V.
Referring to FIG. 2B, a buried N+ mask (BN+ mask) is used in implanting arsenic ions in the P-type well 12. Then, the arsenic ions are activated for forming a plurality of bitlines 14 at fixed intervals. A gate oxide film 15 is formed on the substrate 11 and a doped polysilicon is deposited on the gate oxide film 15. A first photoresist film (not shown) is then coated on the polysilicon layer and subjected to selective patterning by exposure and etching, thereby forming a plurality of wordlines 16. The buried bitlines 14 and the wordlines 16 are perpendicular to each other.
Referring to FIG. 2C, a second photoresist film (not shown) is coated on the wordlines 16 and subjected to patterning using a code mask. A resulting patterned photoresist film 17 and the wordlines 16 are used as masks in implanting code ions, such as boron ions, to pull-up a cell threshold voltage. Thus, data coding of the mask ROM is done by ion implantation of code ions in a channel region of the cell transistor.
As illustrated in FIG. 2D, a CVD oxide film 18 and a BPSG film 19 are deposited on the wordlines 16 and subjected to annealing and reflowing. The BPSG film 19 is selectively removed to expose the buried bitlines 14 which serve as a source/drain of the cell transistor, forming a contact (not shown) and thereafter forming a metal pattern 20. Then, a protection film 21 is formed on the metal pattern 20.
A disadvantage of the conventional method for fabricating a mask ROM is that a turn-around time on the custom data after coding is prolonged because the code ions are implanted before the metal pattern is formed.

Hyundai Electronics Industries Co., Ltd.


A reduction gear of the present invention is compact and light and can be used for tire portions of an apparatus for travelling, etc. Each of outer and inner pins is formed by a rolling bearing. The reduction gear includes block-shaped lubricating members which supply a lubricant to the outer rings of the outer pins to thereby lubricate them, and a ring-shaped lubricating member which supplies the lubricant to the outer rings of the inner pins to thereby lubricate them. The lubricant can be supplied to a pair of cycloid gears through the outer pins and the inner pins for lubrication. Since the cycloid gears, the outer pins, and the inner pins are lubricated by the lubricating members, the reduction gear can enhance its durability, reduce the friction between components to thereby lower the frictional resistance, and realize a light and compact structure.

Japanese Patent Application Laid-Open No. 2004-211847 discloses a conventional power transmission apparatus applied to, for example, a conveyer or a garbage disposal. The power transmission apparatus can properly control an increase in its transmission capacity and reduction of its noise or vibration in accordance with a load exerted by a driven device, while reducing its size and saving space. The power transmission apparatus can transfer an input power to the driven device, and its power transmission mechanism is composed of a first inscribed meshing planetary gear mechanism and a second inscribed meshing planetary gear mechanism disposed in parallel on a power transmission path between an input shaft and an output shaft. The first inscribed meshing planetary gear mechanism includes a first external gear and a first internal gear which slightly differ in the number of teeth, the first external gear being disposed inside the first internal gear such that the first external gear can rotate eccentrically while maintaining the inscribed meshing. The second inscribed meshing planetary gear mechanism includes a second external gear and a second internal gear which slightly differ in the number of teeth, the second external gear being disposed inside the second internal gear such that the second external gear can rotate eccentrically while maintaining the inscribed meshing. The difference in the number of teeth between the first external gear and the first internal gear is rendered different from the difference in the number of teeth between the second external gear and the second internal gear, whereby the power transmitting characteristic of the first inscribed meshing gear mechanism is rendered different from that of the second inscribed meshing planetary gear mechanism.
A cycloid reduction gear built in an in-wheel motor drive device is disclosed in, for example, the Japanese Patent Application Laid-Open No. 2008-309264. The disclosed cycloid reduction gear includes a casing, an input shaft having an eccentric portion, a revolving member which has a through hole into which the eccentric portion is inserted and which revolves about its rotation axis as a result of rotation of the input shaft, an outer periphery engagement member which is held by the casing and which engages with an outer peripheral portion of the revolving member so as to cause rotation of the revolving member about its axis, and a motion conversion mechanism which includes internal pins provided on an output shaft, holes formed in the revolving member, having a diameter larger than the outer diameter of the internal pins by a predetermined amount, and receiving the internal pins, and cylindrical members fitted onto the internal pins at a position where the cylindrical members come into contact with the inner wall surfaces of the holes. The motion conversion mechanism converts rotational motion of the revolving member about its axis to rotational motion around the rotation axis of the input shaft and transmits the rotational motion to the output shaft. Each cylindrical member is fitted onto an internal pin corresponding thereto with a predetermined radial gap formed therebetween. Dynamic pressure grooves are formed in either of the outer surface of the internal pin and the inner surface of the cylindrical member, whereby a dynamic pressure bearing is constituted.
Incidentally, in the conventional power transmission apparatus, the power transmitting characteristics of the first and second gear mechanisms provided in parallel are rendered different from each other by providing a difference between the difference in the number of teeth between the external gear and the internal gear of the first gear mechanism and the difference in the number of teeth between the external gear and the internal gear of the second gear mechanism. Therefore, the conventional power transmission apparatus is large in size, and rendering the conventional power transmission apparatus light and compact has been difficult.


A TFT includes a substrate, a gate, a gate insulating layer, a semiconductor oxide layer, a source/drain layer, a passivation layer, and a transparent conducting layer arranged from bottom to top. An etching block layer is formed after the source/drain layer arranged on the semiconductor oxide layer is etched. A method for forming for the TFT includes: depositing and photo-etching a gate on a substrate; depositing a gate insulating layer on the gate; depositing and photo-etching a semiconductor oxide layer on the gate insulating layer; depositing and photo-etching a source/drain layer on the semiconductor oxide layer; etching the source/drain layer on the semiconductor oxide layer for forming an etching block layer; depositing a passivation layer on the source/drain layer and the semiconductor oxide layer; depositing a transparent conducting layer on the passivation layer.

1. Field of the Invention
The present invention relates to the field of production of wafers and the field of display technology, and more particularly, to a thin-film transistor (TFT) and a method for forming for the TFT.
2. Description of the Prior Art
With rapid development of technology, the monitor display technology applying to cellphones, flat panels, or computers improves and updates constantly. The flat panel display (FPD) technology representing liquid crystal displays (LCD) has developed and improved rapidly with the outbreak of the technology and the demand of the market since 1990s. Especially, thin film transistor liquid crystal displays (TFT-LCD) become the mainstream products in the FPD market because of the advantages of good performance, suitable for mass production, good automation, low raw costs, etc.
The TFT-LCD is one type of active array LCD. Each of the liquid crystal pixels on the monitor of this type is driven by the TFT arranged behind the pixels. The TFT influences response and color of the displays greatly. The TFT is an important component in such a type of displays.
The TFT, short for thin film transistor, comprises a TFT-etched back channel and a TFT-protected back channel. The TFT-etched back channel comprises a substrate, a gate, a gate insulating layer, a semiconductor layer, and a source/drain layer arranged the semiconductor layer and the gate insulating layer (a drain and a source) arranged from bottom and top. The source/drain layer is formed at the position corresponding to the semiconductor layer after the source/drain layer is deposited on the gate insulating layer and the semiconductor layer through wet-etching. The semiconductor layer is easily destroyed since strong acid and mixtures are used in the process of wet-etching.
As for the TFT components, the semiconductor layer is mostly fabricated from a-IGZO thin films. A-IGZO thin films have advantages of high carrier mobility, high stability, and good homogeneity and have a good prospect in application widely. However, it is reported that agents like water, oxygen, and light easily affects the TFT when contacting the a-IGZO thin films. That's why more and more technicians use the TFT-protected back channel and arrange a protection layer on the semiconductor layer. The main difference between the TFT-protected back channel and the TFT-etched back channel is that an etching block layer is arranged on the semiconductor layer. The etching block layer is used for protecting the semiconductor layer from being destroyed in the process of etching. But, it is necessary to add a process of fabricating the etching block layer, which affects production efficiency. Moreover, the performance of the semiconductor layer is easily affected because of the process of depositing the etching block layer on the semiconductor layer. Also, the size of the TFT expands while the designing space reduces because of the addition of the etching block layer.
A variety of TFTs are developed in the conventional technology. However, in order to improve the performance of the TFT, prolong the lifespan of the TFT, expand the designing space of the TFT array, and improve the method for forming for the TFT, it is necessary to propose a new TFT for resolving the problems occurring in the conventional technology and propose a method for forming for the new TFT.

Thin-film transistor and method for forming the same

Shenzhen China Star Optoelectronics Technology Co., Ltd


The specification discloses an isolation trench (36) formed in a semiconductor body. A stress relief layer (38) of oxide is formed on the interior walls of the trench (36), the layer (38) being sufficiently thin to prevent stressing of the lower corners of the trench (36). A masking layer (40) of nitride is formed over the layer (38). An isolation body (42) of oxide or polysilicon then refills the remainder of the trench and a cap oxide (43) and layer (44) of field oxide is formed over the semiconductor body and the filled trench.

It has heretofore been known to use trench isolation to improve the oxide isolation scalability in bipolar processes. For example, reference is made to the article entitled, "U-Groove Isolation Technology for High Density Bipolar LSI's", Jap. J. Appl. Phys., 21, Suppl. 21-1, pp. 37-40, 1981, by Y. Tamaki, et al. In addition, trench isolation has been used in the manufacture of MOS devices, as described in such articles as "Trench Isolation Technology for MOS Applications", Proc of the First International Symposium on VLSI Science and Technology, pp. 339-346, 1982, by S. Y. Chiang, et al. Further, trench isolation has been advantageously used to suppress latch-up in bulk CMOS devices, as reported in such articles as "Deep Trench Isolated CMOS Devices", IEDM Tech. Dig., pp. 237-240, 1982, by R. D. Rung, et al.
Isolation trenches have conventionally been fabricated by the etching of deep, narrow trenches located to separate such areas as PMOS and NMOS regions. The sidewalls of previously developed trenches have then been oxidized to provide dielectric isolation and the trench refilled with a conformal undoped polysilicon deposition, which is planarized to leave polysilicon only inside the trench. Finally, a field oxide is grown on top of the trench and field regions to cap the polysilicon and to provide transistor-to-transistor isolation.
While previously developed trench isolation processes have provided improvements in oxide isolation scalability and in the suppression of latch-up, problems have occurred due to dislocations formed in the semiconductor body during the fabrication of the trench. These defects or dislocation of the semiconductor material allow high leakage current detrimental to semiconductor devices. A need has thus arisen for a trench structure and a method of fabrication which eliminates the formation of defects in the surrounding semiconductor body.

Method of fabricating defect free trench isolation devices


A system and method for multi-channel data management with dynamically configurable routing, having multiple independent container instances or crossbars. The system and method provide dynamically allocated and released half- and full-duplex data communications channels through crossbar access ports, with intercommunications between transmit ports and receive ports being independently configured. Transmission and reception of data is provided through the reserving of pages of transmission media, allocation of pages to producers of data, transmission of the filled pages to a queue for reception at one or more receiving ports, and reception by a consumer through a receiving port. Allocation, transmission and reception of the pages may optionally be executed synchronous to the availability of the page. Page state changes are used to mark pages as to their availability, allocation, and queuing such that data transfer is accomplished using an in-place method.

Microprocessor and Digital Signal Processor operating systems commonly provide facilities for the management of data. Generally, a number of separate facilities, each supporting a narrow range of data management paradigms, are supported. Several distinct and separable data management mechanisms may be required by an application, necessitating the support of multiple divergent interfaces, with a resultant increase in executable image size and reduction in maintainability.
Data management mechanisms are often statically configurable in the prior art. Paged data mechanisms may require a priori knowledge of a fixed page size, page depth, connectivity and the quantity of available objects prior to execution. The absence of dynamic page allocation, configuration and release may significantly constrain the design of an application to accommodate the lack of flexibility in available data management mechanisms. The inability to configure individual instances of data management mechanisms to support diverse and specific application requirements results in inefficient resource allocation and available bandwidth reduction.
Some data management mechanisms do not support full duplex operation. Further, many data management mechanisms are not addressable, or employ fixed routing configurations. Such inflexible data management mechanisms are not readily extensible to support multiple data management paradigms, and may have limited utility. Dynamic routing configurations may provide extensible support for data management paradigms and processing protocols not currently envisioned, improving the candidacy for reuse of such mechanisms, and further supporting increased application efficiency and reduction in executable code image size. Reduction in executable code image size may be a significant benefit, especially in embedded processor and memory-constrained systems.
Data management mechanisms often do not abstract managed data. Such mechanisms may depend on partial or complete explicit a priori definition of the structure or nature of managed data prior to execution. Data management mechanisms may interrogate managed data, establishing a dependency on data form and content to ensure proper operation. The absence of complete data abstraction in data management mechanisms is in direct conflict with the principles of information hiding and encapsulation, and may result in a significant reduction in application robustness and maintainability.
Further, many data management mechanisms do not support in-place data allocation, production, transmission, reception or release. Reference operations are inherently more efficient than alternative value-oriented data management, as less processor or direct memory addressing unit bandwidth may be consumed relative to copying data.
Data management mechanisms do not commonly abstract data routing from transmission or reception. Routing abstractions may provide uncoupling or orthogonality in the design of producer and consumer entities, and increase the benefits associated with information hiding, including design simplification and reduced inter-thread communication requirements.
Data management mechanisms do not commonly support synchronization on data allocation, transmission and reception. Synchronization may be employed to facilitate robust application development and enhance application efficiency.
Finally, data management mechanisms do not commonly provide transparent accessibility by threads and interrupt service routines, in reentrant multi-threaded single processor and distributed environments.
Therefore, there exists a need in the art to provide flexible, generic and dynamically configurable data management mechanisms supporting dynamic allocation, configuration and release of distinct instances.
There also exists a need in the art for data management mechanisms to facilitate dynamically configurable routing. Instances of such data management mechanisms should provide multiple access ports, such that routing is configurable on a channel-specific basis.
Further, there exists a need in the art for data management mechanisms with the capability of supporting multiple data management paradigms. Data management mechanisms should provide such support simultaneously in a single instance, and allow multiple instances to exhibit divergent behavior.
There exists a need in the art for data management mechanisms to accommodate abstraction of managed data, and for data management mechanisms to support in-place data allocation, production, transmission, reception and release.
Additionally, there exists a need for data management mechanisms to abstract data routing from transmission and reception, uncoupling production and consumption entities.
There exists a need in the art for data management mechanisms to facilitate synchronization on data allocation, transmission and reception.
Finally, there exists a need in the art for reentrant and transparent accessibility of all of the aforementioned features and functionality by threads and interrupt service routines in multi-threaded single processor and distributed environments.
The following documents are referenced as supplying details related to potential components, software and hardware systems useful for the implementation of the present invention:
1. "TMS320C6x Digital Signal Processors Product Information", Texas Instruments Incorporated, part number SPRC010A (March 1998). PA0 2. "TMS320C62xx Technical Brief", Texas Instruments Incorporated, part number SPRU197A (October 1997). PA0 3. "TMS320C6x Assembly Language Tools User's Guide", Texas Instruments Incorporated, part number SPRU186C (February 1998). PA0 4. "TMS320C6x Optimizing C Compiler User's Guide", Texas Instruments Incorporated, part number SPRU187C (February 1998). PA0 5. "TMS320C6x C Source Debugger User's Guide", Texas Instruments Incorporated, part number SPRU188D (January 1998). PA0 6. "TMS320C62x/C67x CPU and Instruction Set Reference Guide", Texas Instruments Incorporated, part number SPRU189C (March 1998). PA0 7. "TMS320C6201/C6701 Peripherals Reference Guide", Texas Instruments Incorporated, part number SPRU190B (March 1998). PA0 8. "TMS320C62x/C67x Programmer's Guide", Texas Instruments Incorporated, part number SPRU198B (February 1998). PA0 9. "ASP Operating System Developer's Guide", DNA Enterprises, Incorporated, Larry Turner author, part number 745-02011-01 (Jun. 22, 1998).

System and method for synchronized, multi-channel data management with dynamically configurable routing


A single-temperature-point temperature-sensitivity sensor assumes that all sensitivity lines converge at absolute zero temperature, so during calibration measurement is needed at only one temperature. A sensor output voltage is generated by current from a mirrored current source flowing through a variable resistor. During calibration, the resistance of the variable resistor and the mirror ratio of the mirrored current source are adjusted. An error amplifier compares voltages generated by unit currents generated by unit current sources to adjust the unit current sources and the mirrored current source. Each unit current flows through a grounded-base PNP transistor. A switchable PNP transistor is in parallel with one of the grounded-base PNP transistors and has its base switched on and off to adjust the PNP current for two measurements. The difference between the two measurements is compared to a calibration target to adjust the variable resistor and mirror ratio during calibration at a single temperature.

Integrated Circuit (IC's) can include thousands or millions of transistors on a single chip. Operation of these transistors can generate significant heat in a small area. Hotspots can develop that can damage the IC device.
The temperature of the IC device can be monitored by an on-chip temperature-sensor circuit. When the monitored temperature exceeds a limit, the IC device can be protected, such as by reducing operating frequency or by shutting down parts of the IC device. Once the IC device has cooled, the frequency can be increased again, or more parts of the IC device may be powered back up.
Temperature-sensor circuits have a temperature sensitivity that is the slope of a plot of the circuit's voltage vs. temperature (V/T). This temperature sensitivity can shift due to gain errors. Gain errors may be caused by device mis-match, layout mis-match, DC offsets, or other circuit characteristics.
During calibration, the temperature-sensor circuit's output voltage can be measured at two or more temperature points to establish a straight line in the voltage vs. temperature plot. The slope of the line, in volts per degree C., can be obtained and used during normal operation to determine the temperature shifts corresponding to sensor voltage changes.
Such two-temperature-point calibration is undesirable, since the circuit must be measured at two different temperatures during calibration. The IC device may have to be placed in a temperature-controlled chamber or otherwise heated or cooled to obtain the second temperature measurement. Such heating may require 10 or more minutes. Expensive test equipment may be occupied during this heating period, or the product testing line may need to be expanded, increasing test and manufacturing costs.
More recently, single-temperature-point calibration has been used to eliminate the heating delay time. One temperature point is assumed to be absolute zero (−273.15° C.) where the temperature sensor circuit produces some pre-computed offset. Since the voltage vs. temperature line is anchored at absolute zero, only one other temperature point is needed to establish the line's slope or sensitivity. Thus calibration requires measuring the output voltage of the temperature sensor circuit at only 1 temperature point. This measured temperature point can be at room temperature, eliminating the need for a temperature chamber during calibration.
However, single-point temperature sensor calibration often suffers from a relatively small temperature sensing output range. Sometimes the temperature sensitivity can be tuned only over a short range. DC offsets in the circuit can cause inaccurate sensitivity readings. Calibration errors can occur when the 2nd, measured temperature point is incorrectly estimated, which can occur when device mismatches occur in the temperature sensor circuit.
What is desired is a single temperature-point temperature sensor circuit. A calibration method that measures the sensor circuit's output at only one temperature is desired. A method to adjust the sensor circuit's temperature sensitivity over a wide range or temperatures is desired. A calibration method that cancels DC offsets in the temperature sensor circuit is desired.

Single-temperature-point temperature sensor sensitivity calibration

Hong Kong Applied Science and Technology Research Institute Company Limited


An apparatus includes a plurality of radio frequency tags operable to produce respective answer electromagnetic waves in response to a query electromagnetic wave; and a toy including a query circuit and an interaction circuit, the query circuit being operable to emit the query electromagnetic wave and receive one or more of the answer electromagnetic waves, and the interaction circuit being operable to select an output perceptible by a user based on which of the one or more answer electromagnetic waves are received.

The present invention relates to methods and apparatuses for facilitating communication between a user and a toy and, more particularly, to the use of radio frequency tags in facilitating such communication.
With reference to FIG. 1, a convention apparatus 10 is shown which facilitates communication between a base 12 and a toy 14 to facilitate a semi-interactive play experience for a child (not shown). The base 12 includes a microprocessor 16, an audio circuit 18 and a query circuit 20. The toy 14 includes a responder 22. In operation, the query circuit 20 outputs a pulse signal, usually in the radio frequency spectrum, that is received by the responder 22 of the toy 14. The responder 22 produces a response signal, also in the radio frequency spectrum, in response to the pulse signal from the query circuit 20 of the base 12. The query circuit 20 is further operable to detect the response signal from the responder 22 and to provide an indication to the microprocessor 16 of the proximity of the toy 14. When the microprocessor 16 receives an indication of the proximity of the toy 14, it commands the audio circuit 18 to produce an audible signal directed to the child.
Unfortunately, the conventional method and apparatus suffers from a number of disadvantages, e.g., the audible signals issued from the audio circuit 18 of the base 12 bear no relationship to the relative positions of the child and the toy 14. Rather, the audible signals from the base 12 are a function of the relative positions of between the toy 14 and the base 12. This severely limits the scope of interactive play between the child and the toy 14. Further, there is no relationship between the audio signal from the base 12 and the surroundings in which the base 12, the toy 14, and the child are located. Indeed, the only variable that affects the audible signal issued by the audio circuit 18 is the proximity and/or orientation of the toy 14 with respect to the base 12.
Accordingly, it would be desirable to employ new methods and/or apparatuses for facilitating communication between a user, for example a child, and a toy which take into account the proximity of the user to the toy and/or the surroundings in which the user and toy are located, thereby greatly expanding the range of interactive play enjoyed by the user.

Method and apparatus for facilitating communication between a user and a toy


A receiver is provided to support a plurality of carrier aggregation modes. The receiver includes a low-noise amplifier (LNA) module including a plurality of LNAs, wherein the LNAs are arranged to receive input signals from a plurality of input ports, respectively, and each of the LNAs generates and outputs a plurality of noise-cancelled signals at a plurality of output terminals of the LNA module.

In the Long Term Evolution (LTE) standard, carrier aggregation is used in order to increase the bandwidth, where the carrier aggregation comprises several operation modes such as intra-band continuous/non-contiguous carrier aggregation and inter-band carrier aggregation. Therefore, a receiver is required to support all the carrier aggregation operation modes. The receiver usually suffers from noise degradation when operating in some operation modes such as the non-contiguous carrier aggregation mode, a noise-cancellation technique is a good candidate to improve the performance by performing the noise cancellation upon the signal. Hence, a circuit design to satisfy the aforementioned requirements is an important topic.

Multi-path low-noise amplifier and associated low-noise amplifier module and receiver