A method of making a resist pattern is provided, which decreases or eliminates the fluctuation of deformation of original openings of a resist layer which is induced by the change of their density (i.e., the count of the original openings within a unit area) or by their location in the reflowing process. The method comprises the steps of (a) forming a resist layer on a target layer; (b) patterning the resist layer to form original openings and at least one slit in the resist layer; the slit surrounding the original openings and having a specific width; and (c) reflowing the resist layer patterned in the step (b) under heat to cause deformation in the original openings and the at least one slit, thereby contracting the original openings and eliminating the at least one slit; the original openings thus contracted serving as resultant openings for forming desired contact/via holes in the target layer; the resist layer having the resultant openings constituting a resist pattern.

1. Field of the Invention
The present invention relates to a method of making a resist pattern and more particularly, to a method of making a resist pattern which is applicable to formation of contact holes and/or via holes in a layer or layers of a substrate in semiconductor device fabrication, where the resist pattern (i.e., the patterned resist layer) is used as a mask in the contact/via hole formation process.
2. Description of the Related Art
Semiconductor devices comprise xe2x80x9ccontact holesxe2x80x9d for electrically interconnecting a specific semiconductor or conductive layer with a wiring layer and/or xe2x80x9cvia holesxe2x80x9d for electrically interconnecting an upper wiring layer with a lower wiring layer. In recent years, contact holes and via holes have been becoming smaller according to the increasing integration level.
Typically, contact/via holes are formed by the well-known photolithography and etching techniques. Specifically, after a photo-sensitive resist layer is formed on a dielectric layer, the resist layer thus formed is patterned to have desired openings. The resist layer thus patterned constitutes a xe2x80x9cresist patternxe2x80x9d having the openings. Thereafter, using the resist layer thus patterned (i.e., the resist pattern) as a mask, the underlying dielectric layer is selectively etched by way of the openings of the mask, forming contact/via holes in the dielectric layer. Thus, to miniaturize contact/via holes in a desired or target layer, the dimensions of the openings of the resist pattern (i.e., the mask) need to be made smaller according to the desired dimensions of the contact/via holes.
Moreover, since the dimensional error of the contact/via holes (which includes deformation of the contact/via holes themselves) varies dependent on the dimensional error of the openings (which includes deformation of the openings themselves) of the resist pattern, there is the need to form smaller openings in the resist pattern as precisely as possible.
As a result, conventionally, a great deal of effort has been put to decrease the dimensional error of the smaller openings of the resist pattern.
With an example of the prior-art methods to make smaller openings of the resist pattern, after original openings are formed in a resist layer, the resist layer is subjected to a heat treatment at a temperature higher than its softening point, thereby gradually causing plastic deformation in the resist layer. In this method, the dimensions of the original openings are decreased due to the plastic deformation while the shape of the original openings is well controlled. This method is disclosed, for example, in the Japanese Non-Examined Patent Publication Nos. 2-7413 published in 1990, 10-274854 published in October 1998, and 11-295904 published in October 1999.
FIGS. 1A to 1D show the prior-art method of making a resist pattern disclosed in the Japanese Non-Examined Patent Publication No. 11-295904.
First, as shown in FIG. 1A, a positive electron-beam (EB) resist with chemical amplification property (i.e., a positive, chemically amplified resist) is coated on the surface of a substrate 110, forming a resist layer 111 thereon. The target layer (not shown) in which contact/via holes are formed is located at the top of the substrate 110 and thus, it may be said that the layer 111 is located on the target layer.
Using an electron-beam direct writing apparatus, specific openings are formed or written in the resist layer 111. Thus, the layer 111 is selectively exposed to an irradiated electron beam, thereby forming desired exposition areas 111a in the layer 111. Desired original openings are formed in the individual areas 111a.
Next, as shown in FIG. 1B, the resist layer 111 with the exposition areas 111a formed on the substrate 110 is subjected to a post exposure bake (PEB) process and developed, selectively removing the areas 111a from the resist layer 111. Thus, original openings 115 are formed to penetrate the resist layer 111 in the respective areas 111a. The resist layer 111 with the original openings 115 thus formed is termed an original resist pattern 112.
Subsequently, as shown in FIG. 1C, the original resist pattern 112 is subjected to a heat treatment at a specific temperature higher than the softening temperature of the resist layer 111 for reflowing the pattern 112. Through this reflowing process, the original openings 115 are plastically deformed and narrowed, resulting in narrowed or contracted openings 115a, as shown in FIG. 1D. The original resist pattern 112 with the narrowed or contracted openings 115a is termed a resultant resist pattern 113.
With the prior-art method explained with reference to FIGS. 1A to 1D, although the narrowing or contracting effect of the original openings 115 can be generated, there is a problem that unallowable fluctuation of the narrowing/contracting effect for the openings 115 occurs if the density of the openings 115 (i.e., the count of the openings 115 within a unit area) in the original resist pattern 112 varies locally within a wide range. This is due to the correlation of the deformation amount of the openings 115 with their density.
As a result, the resultant openings 115a thus narrowed or contracted tend to have an undesired shape and/or undesired dimensions. In the worst case, some of the original openings 115 disappear (i.e., cease to exist) and accordingly, desired contact/via holes are unable to be formed in the underlying target layer (not shown) of the substrate 110.
The above-described problem can be solved by a measure to change or adjust the dimensions of the original openings 115 in the original resist pattern 112 prior to the reflowing process according to the density distribution of the openings 115 within the pattern 112. This measure can be comparatively easily applied to the memory cells having the periodically-varying density distribution of the openings 115. However, this measure is very difficult to be applied to the logic cells having the randomly-varying density distribution of the openings 115.
The deformation amount of the individual original openings 115 for the logic cells can be predicted with the use of computer simulation or the like. In this case, however, there arises another problem that it takes extremely long time to make a desired resist pattern. Thus, the above-described measure is unable to be applied in practice.
Accordingly, an object of the present invention is to provide a method of making a resist pattern that decreases or eliminates the fluctuation of deformation of original openings of a resist layer which is induced by the change of their density (i.e., the count of the original openings within a unit area) in the reflowing process.
Another object of the present invention is to provide a method of making a resist pattern that decreases or eliminates the fluctuation of deformation of original openings of a resist layer which is induced by their location or position in the reflowing process.
Still another object of the present invention is to provide a method of making a resist pattern that prevents or effectively suppresses unallowable fluctuation of the narrowing/contracting effect for original openings of a resist layer even if their density varies locally within a wide range.
A further another object of the present invention is to provide a method of making a resist pattern that copes with the miniaturization of resultant openings with a simple measure.
A still further another object of the present invention is to provide a method of making a resist pattern that copes with the miniaturization of resultant openings with a simple measure independent of their density change.
The above objects together with others not specifically mentioned will become clear to those skilled in the art from the following description.
A method of making a resist pattern according to the present invention comprises the steps of:
(a) forming a resist layer on a target layer;
(b) patterning the resist layer to form original openings and at least one slit in the resist layer;
the slit surrounding at least one of the original openings and having a specific width; and
(c) reflowing the resist layer patterned in the step (b) under heat to cause deformation in the original openings and the at least one slit, thereby contracting the original openings and eliminating the at least one slit;
the original openings thus contracted serving as resultant openings for forming desired contact/via holes in the target layer;
the resist layer having the resultant openings constituting a resist pattern.
With the method of making a resist pattern according to the present invention, the resist layer, which is formed on the target layer, is patterned to form the original openings and the at least one slit in the resist layer in the step (b). The at least one slit surrounds the at least one of the original openings and has the specific width.
Thereafter, in the step (c), the resist layer is reflowed under heat to cause deformation in the original openings and the at least one slit, thereby contracting the original openings and eliminating the at least one slit. The original openings thus contracted serves as the resultant openings for forming the desired contact/via holes in the target layer. The resist layer having the resultant openings constitutes the resist pattern.
Accordingly, in the step (c), the at least one slit serves as if it is a breakwater for the softened, reflowing material of the resist layer with the original openings, thereby suppressing undesired, excessive deformation of the same material. Also, the at least one slit is eliminated in the step (c) and therefore, it gives no effect to the subsequent process steps.
When the at least one slit is provided to suppress or prevents the excessive deformation of the material of the resist layer in its peripheral area, the at least one slit is located between an edge of the resist layer and the original openings adjacent to the edge. In this case, relatively larger deformation of the material of the resist layer in the peripheral area with respect to deformation of the same material in the middle or internal area is suppressed effectively by the at least one slit. As a result, the fluctuation of deformation of the original openings of the resist layer which is induced by the positional change of the original openings is decreased or eliminated in the reflowing step (c).
Thus, unallowable fluctuation of the narrowing/contracting effect for the original openings is prevented or effectively suppressed even if some of the original openings exist in or near the peripheral area of the resist layer. This means that the method can cope with the miniaturization of the resultant openings with a simple measure.
On the other hand, when the at least one slit is provided to suppress or prevents the fluctuation of deformation of the material of the resist layer which is induced according to the density difference of the original openings, the at least one slit is located so as to surround the respective sets of the original openings arranged at different densities. Thus, the per-opening volumes of the material of the resist layer for the respective sets of the original openings are controlled to be approximately equal to each other. In this case, the deformation amounts of the material of the resist layer for the respective sets of the original openings are set approximately equal. As a result, the fluctuation of deformation of the original openings of the resist layer which is induced by their density change is decreased or eliminated in the reflowing step (c).
Thus, unallowable fluctuation of the narrowing/contracting effect for the original openings is prevented or effectively suppressed even if the density of the original openings varies locally within a wide range. This means that the method can cope with the miniaturization of the resultant openings with a simple measure independent of their density change.
In a preferred embodiment of the method according to the invention, the at least one slit is located between an edge of the resist layer and the at least one of the original openings adjacent to the edge.
In another preferred embodiment of the method according to the invention, first to n-th sets of the original openings are located at first to n-th densities in first to n-th regions of the resist layer, respectively, where n is an integer greater than unity. At least two of the first to n-th densities are different from each other. The at least one slit is formed to surround each of the first to n-th regions of the resist layer.
In this embodiment, preferably, the at least one slit is formed in such a way that per-opening volumes of a material of the resist layer in the first to n-th regions are approximately equal to each other.
In still another preferred embodiment of the method according to the invention, the at least one slit has a width in such a way as to disappear after the step (c) of reflowing the resist layer is finished.
In a further preferred embodiment of the method according to the invention, the resist layer is made of a positive photoresist material. For example, the material contains a quinone-azide-system photosensitive agent, an alkali-soluble resin, and a solvent.
Preferably, in the step (c) of reflowing the resist layer, the patterned resist layer is reflowed at a temperature higher than a softening temperature of a material of the resist layer by 10xc2x0 C. or more and not exceeding 150xc2x0 C. If the patterned resist layer is reflowed at a temperature higher than a softening temperature of a material of the resist layer by less than 10xc2x0 C., desired deformation does not occur in the resist layer. Thus, the advantages or effects of the invention are not given.
On the other hand, if the patterned resist layer is reflowed at a temperature exceeding 150xc2x0 C., excessive deformation occurs in the resist layer. Thus, the advantages or effects of the invention are not given.


A method for detecting ultra-fine features of an integrated circuit (IC) on a semiconductor substrate is disclosed. The semiconductor substrate comprises an IC fabricated by 22 nanometer or smaller scale semiconductor micro-fabrication process. The integrated circuit includes circuit features parallel to a circuit horizontal direction or a circuit vertical direction. The method includes focusing an incident light to produce a focused light spot on a portion of the IC. The incident light is linearly polarized in a linear polarization substantially parallel to the circuit horizontal direction. The method includes detecting reflected light from the portion of the IC, producing a relative movement between the focused light spot and the IC to allow the focused light to illuminate different portions of the IC, obtaining an image of the IC using signals of the reflected light detected from different locations of the integrated circuit, and detecting IC features in the image.

The present application relates to system and method for probing ultra-fine features in integrated circuits (ICs), and in particular, to optical microscopy techniques for probing sub-32 nm semiconductor integrated circuits.
To improve an integrated circuit functionality and performance, IC manufacturers have been, in the last four decades, shrinking the sizes of circuit components and at the same time, increasing the number of circuit components. It becomes necessary to reduce the size of the circuit features, that is, as shown in FIG. 1, the lines and spaces that make up the circuit elements on the semiconductor substrate. The circuit features, referring to FIG. 1, are predominantly aligned along two orthogonal X and Y directions. One direction (e.g. x) can be called the circuit horizontal direction; another direction (e.g. y) can be called the circuit vertical direction. The minimum feature size that can be accurately produced on a substrate is limited by the ability of the fabrication process to form an undistorted optical image of the mask pattern onto the substrate, by the chemical and physical interaction of the photo-resist with the developer, and by the uniformity of the subsequent process (e.g., etching or diffusion) that uses the patterned photo-resist.
The minimum feature size of an IC is defined by design rules. Design Rules are a series of parameters provided by semiconductor manufacturers that enable the designer to verify the correctness of a mask set. Design rules are specific to a particular semiconductor manufacturing process. A design rule set specifies certain geometric and connectivity restrictions to ensure sufficient margins to account for variability in semiconductor manufacturing processes, so as to ensure that most of the parts work correctly. The most basic design rules are single layer rules. For example, a width rule specifies the minimum width of any shape in the design. A spacing rule specifies the minimum distance between two adjacent objects. The smallest rules, as defined by the International Technology Roadmap for Semiconductors (ITRS), have decreased from 65 nm in 2006, 45 nm in 2008, and 32 nm in 2010, to 22 nm in 2012 and 14 nm (˜2014) for the current and next generation CMOS IC fabrication technologies.
As electronic devices become more miniaturized and more powerful, IC devices become smaller and more devices are packed in each chip. The cost of manufacturing has increased and the yield is decreased and the new causes of yield decrease emerge as new materials used and shrinking process variation tolerances.
Probing tools are frequently utilized during testing and debugging integrated circuit (IC) designs and layouts, where efforts are focused on defect localization and accurate waveform and timing measurements of signal switching inside sub-volt devices. Signal measurements are performed through the back side of the device.
The rapidly decreasing circuit features in electronic devices present significant challenge to debug and analytical tools to discern increasingly smaller circuit features and to preform timing analysis on a given transistor node.
Accordingly, there is a need for improved analytical method to probe and analyze ultra-fine circuit features in ICs fabricated by 22 nm or smaller CMOS technologies.

This patent is subject to a terminal disclaimer.

Probing circuit features in sub-32 NM semiconductor integrated circuit


Process for producing superconducting metal-oxide textiles comprising impregnating a preformed, organic textile material with metal compounds in a desired atomic ratio, heating the material in a weakly oxidizing atmosphere to pyrolize and oxidize the organic material, maintaining the material at temperature in an oxidizing atmosphere, and cooling the material in an oxidizing atmosphere, so as to form a crystalline structure capable of superconducting.

Superconductivity, the virtual disappearance of electrical resistivity, was initially discovered in mercury cooled to the boiling temperature of liquid helium. This discovery initiated the search for materials which would be superconductive at higher temperatures. In 1987 came a significant advance. Superconductivity was found at 95.degree. K. in a material composed of several phases containing yttrium, barium, copper and oxygen. The discovery was significant in that the temperature at which superconductivity appeared was above the boiling temperature of liquid nitrogen, which could then be used for the cooling medium. The superconducting phase was found to correspond to the crystalline, orthorhombic oxide YBa.sub.2 Cu.sub.3 O.sub.7. The superconductive property was lost, however, upon heating the orthorhombic phase under conditions where oxygen was depleted giving rise to a tetragonal phase, the composition of which was close to YBa.sub.2 Cu.sub.3 O.sub.6. The transition seemed to occur around the composition YBa.sub.2 Cu.sub.3 O.sub.6.5. Hence the superconductive property exists in compounds of the formula YBa.sub.2 Cu.sub.3 O.sub.7-x where x may vary from 0 to 0.4, the optimum being about 0.19.
Other high temperature superconductors which now have been identified include YBa.sub.2 CuO.sub.7-x, Ba.sub.x La.sub.5-x Cu.sub.5 O.sub.5(3-y), Bi.sub.2 Sr.sub.2 Cu.sub.2 O.sub.7+x, Bi.sub.4 Sr.sub.3 Ca.sub.3 Cu.sub.4 O.sub.x, and Tl.sub.2 Ca.sub.2 Ba.sub.2 Cu.sub.3 O.sub.x.
Superconductive metal oxide material can be produced by traditional ceramic techniques of grinding metal compounds in stoichiometric ratio to bring the metal compounds into proximity. Subsequent calcination allows the metal ions in their respective crystalline compounds to diffuse into the others. Repeated regrinding and calcination under controlled conditions produces the desired phase which has the superconductive property.
Most of the prospective applications of superconductors are based on the capability of transmitting electric power loss free, and on the production of powerful, compact magnets. Because motors and generators are based on magnetism, there is great potential for reducing their weights, sizes and inefficiencies. Powerful magnets are conceived to allow the suspension of objects such as a shaft in a bearing and a train over a track.
The superconductive metal oxides, like ceramics, are intrinsically brittle and their fabrication into useful shapes, even basic wire, presents many challenges. The most practiced method to date for the formation of superconductive wires has been the powder-in-tube technique. The superconductive material in powder form is packed into a silver, copper or stainless steel tube. The tube is then swaged and drawn, or rolled, down to a small diameter which can be further formed into a useful configuration.
Lusk et al. in Supercond. Sci. Technol. 1, 137 (1988) reported on the fabrication of a ceramic superconducting wire by an extrusion method. Superconductor precursor material in powder form was mixed with a binder such as epoxy resin, and the mixture was extruded into a wire form. The extrusion was heated in a nonreactive atmosphere to remove the binder, and then sintered at high temperature in air or oxygen to develop strength and the superconductive phase. Fragile wire with a diameter of about 0.8 mm resulted from this method.
The preparation of superconductive fibers by extruding or spinning a polymer-metal precursor was described by Chien et al. in Physical Review B, 38, 1953 (1988). Metal ions in the desired atomic ratios were complexed to a polymer. The polymer solution was extruded, dried and wound on a mandrel. Heating in nitrogen pyrolyzed the polymer, and subsequent heating in oxygen converted the metal intermediates to the superconductive oxide. The process produced fibers having diameters of 1 to 100 microns and grain sizes from 1 to 50 microns.
Jin et al. in Appl. Phys. Lett. 51, 943 (1987) described three different laboratory fabrications of YBa.sub.2 Cu.sub.3 O.sub.7-x wire by molten oxide processing. In the melt drawing technique, the center of a bar of YBa.sub.2 Cu.sub.3 O.sub.7-x material was fused with a laboratory blow torch flame, and the two unmelted ends pulled apart leaving a 1.2-mm diameter filament between them. In the melt spinning technique, one end of a bar of YBa.sub.2 Cu.sub.3 O.sub.7-x material was heated and a molten droplet allowed to fall on the outside of a rotating mandrel producing a ribbon 1.5 mm wide and 0.3 mm thick. Still another experiment employed a silver wire as a substrate onto which YBa.sub.2 Cu.sub.3 O.sub.7-x powder in a binder was deposited. The composite was dried, producing a 0.75-mm diameter composite wire containing an 0.25-mm diameter metal core. The wire was further processed by rapidly moving it through a torch flame and melting the outer portion. The wire formed in each of these three methods required a homogenizing heat treatment followed by an oxygen heat treatment to develop the superconductive phase. In production, any of these three techniques would require a high temperature melting furnace and precise control of operating variables.
The processes described above were all directed to the fabrication of a single filament. A process for producing metal oxide fibers, textiles and shapes was described by Hamling in U.S. Pat. No. 3,385,915. By textiles is meant a variety of textile forms including single filament, staple fibers, continuous tow and yarns, woven fabrics, batting and felts composed of fibers.
The Hamling process comprises initially impregnating a preform of organic polymeric textile material with one or more compounds of metals as desired in the final product. The impregnated material is heated under controlled conditions which prevent ignition of the organic material, but pyrolize the organic material to predominantly carbon and remove the carbon as a carbon-containing gas. The heating continues to oxidize the metal compounds. At least part of the heating is performed in the presence of an oxidizing gas. A product results which has substantially the same shape as the preform, but only about 40% to 60% of its original size. The metal oxide in the product typically is substantially micro-crystalline, or amorphous, that is, its crystallites are so small that they are barely discernible by conventional x-ray diffraction. This is indicative of a crystallite size on the order of 0.1 microns or less, which Hamling preferred for maximum strength in his product. The process, however, is described as capable of preparing fibers with crystallite sizes up to approximately 1 micron. With larger crystallite sizes, a significant loss in strength occurred. Mechanical properties of the product were impaired when the crystallite size exceeded approximately one-tenth the diameter of the fibers.
It is known that material capable of superconductive behavior must be in a crystalline state. Hence the process as described by U.S. Pat. No. 3,385,915 would not produce superconductive metal oxide.
Fabrics composed of metal oxides are described by Hamling in U.S. Pat. No. 3,663,182. Such fabrics are produced by the process described in U.S. Pat. No. 3,385,915, which has been summarized above. Hence, the fabric has all the characteristics of a product of that process, and would not be expected to have superconductive properties.
It is an object of the present invention to provide a process for producing superconducting metal oxide fibers, textiles and shapes. It is also an object to produce these products with flexibility and strength so as to allow their further shaping.
It is a feature of this invention that the starting material is organic polymeric material which can be preformed into the final product shape.
It is an advantage of this process that complicated and irregular product shapes can be produced from inexpensive organic materials which are readily preformed into the desired final shape. The preforming is inexpensive in that costly machining is unnecessary. Another advantage is that a high temperature melting furnace is not required.

Fabrication of superconducting metal-oxide textiles by heating impregnated polymeric material in a weakly oxidizing atmosphere


The play feature for a game of the present invention comprises a multiple kicker ramp including a plurality of spaced-apart longitudinal dividers which define parallel ball lanes and a plurality of perpendicular paths between the ball lanes. Balls enter the ramp from the playfield. A ball sensor is provided in each of the perpendicular paths, each sensor associated with a different point value. A multiple kicker element, which is activated by a player controlled switch, is provided in one of the ball lanes to direct a ball to the other ball lane over one of the perpendicular paths to activate its ball sensor. This causes the point value of the activated sensor to be added to the player's score.

This invention relates to pinball games and more particularly to play features used in pinball games which are designed to foster and to maintain player interest in the games. A typical pinball game includes an inclined playfield which supports a rolling ball, a pair of player controlled flippers, a vertical backbox housing the game electronics and a variety of play features (electromechanical devices) on the playfield. The person who plays the game controls the flippers mounted on the playfield to keep the pinball in play.
A typical object of pinball games is for the player to direct pinballs at selected play features or targets on the playfield to score points or to achieve some predetermined game objective. Player interest in pinball games is increased by providing novel play features which allow a player to increase the score by directing a pinball at the play feature by a skill shot. It is desirable for pinball game manufacturers to design play features which provide entertaining effects and which stimulate player interest in the game by allowing for increased scores.


A photopolymerizable resin material composition for forming a polymer used for a liquid crystal display apparatus includes at least one acrylate compound selected from the group consisting of a bifunctional acrylate compound having a fluorine substitution ratio .alpha. in the range of 0.1<.alpha.<0.8, a bifunctional acrylate compound having a fluorine substitution ratio .alpha. in the range of 0.ltoreq..alpha.<0.8, a bifunctional acrylate compound having a fluorine substitution ratio .alpha. in the range of 0.1<.alpha.<0.8, a bifunctional acrylate compound having a fluorine substitution ratio .alpha. in the range of 0.1<.alpha.<0.8 and a bifunctional acrylate compound having a fluorine substitution ratio .alpha. in the range of 0.1<.alpha.<0.8 and a bifunctional acrylate compound having a fluorine substitution ratio .alpha. in the range of 0.1<.alpha.<0.8, and a photopolymerization delaying resin material.

1. Field of the Invention
The present invention relates to a liquid crystal apparatus using a liquid crystal material and a polymer material. More specifically, the present invention relates to a photopolymerizable resin material composition for forming a liquid crystal display apparatus having liquid crystal regions surrounded by polymer walls and to a matrix-type liquid crystal display apparatus.
2. Description of the Related Art
As for methods for producing a liquid crystal display apparatus, one for producing a polymer-dispersed liquid crystal display apparatus has been known. According to this method, a mixture of a photocurable or thermosetting resin material is used. Among the mixture, only the resin material is cured so as to be phase-separated from the liquid crystal material, whereby liquid crystal droplets are formed between cured and deposited polymers.
In a conventional liquid crystal display apparatus, orientation of liquid crystal molecules and display color are likely to change during a pen input and cell thickness is likely to change in upper and/or lower portions of a display apparatus due to weight, causing unevenness in the display. However, in the polymer-dispersed liquid crystal display apparatus produced by the phase-separation method, liquid crystal molecules are held in polymers, so that cell thickness is not likely to change, resulting in enhanced display stability of the liquid crystal apparatus with respect to an external force.
As a polymer-dispersed liquid crystal display apparatus; Japanese National Publication No. 58-501631 discloses one displaying a scattered state under the application of no voltage, in which a refractive index of liquid crystal is not matched with that of a polymer and displaying a transparent state under the application of a voltage, in which the refractive index of the liquid crystal changes so as to be matched with that of the polymer.
As methods for forming the polymer-dispersed liquid crystal display apparatus, two methods have been disclosed: Japanese National Publication No. 61-502128 discloses that UV-rays are radiated upon a mixture of liquid crystal and a photocurable resin so that the liquid crystal is phase-separated from the photocurable resin three-dimensionally; and Japanese Laid-Open Patent Publication No. 2-310520 discloses that UV-rays are radiated upon a mixture of a photocurable resin containing liquid crystal and a (meth)acrylate compound so that the liquid crystal is phase-separated from the polymer three-dimensionally. These apparatuses electrically control a scattered state and a transparent state, and therefore, they use materials capable of forming smaller liquid crystal droplets so as to enhance scattering characteristics under the application of no voltage.
In the case where a conventional polymer-dispersed liquid crystal display apparatus is to be utlized a mode in which liquid crystal molecules are required to be aligned in different directions relative to the substrates sandwiching the liquid crystal, such as a TN mode and an STN mode, it is difficult to form liquid crystal droplets in a uniform manner, to exactly control the positions of the liquid crystal droplets, and to perform alignment treatment of the liquid crystal molecules due to the limitations of the production method. This causes various problems. For example, in the conventional polymer-dispersed liquid crystal display apparatus, it is difficult to form liquid crystal droplets in a uniform manner and to exactly control the positions of the liquid crystal droplets. Therefore, a drive voltage varies depending upon the liquid crystal droplet. This causes a lack of abruptness in the threshold response for various electrooptical characteristics, relatively increased drive voltage, and difficulty in enlarging a screen in a high definition state.
Furthermore, since a number of liquid crystal droplets having a low light-scattering ability are present, contrast of the display relatively decreases.
Furthermore, since it is difficult to control the orientation of liquid crystal molecules, viewing angle characteristics are poor and contrast decreases due to depolarization caused by scattering at interfaces between the liquid crystal molecules and the polymer. Specifically, when the polymer is present between the substrates and the liquid crystal in the polymer dispersed liquid crystal apparatus, alignment treatment cannot be performed with respect to the substrates. In order to solve the problem of scattering at interfaces between the liquid crystal molecules and the polymer, the interfaces therebetween in pixels may be reduced. However, according to a conventional method, since liquid crystal droplets are naturally formed, it is difficult to reduce the interfaces.
Furthermore, in a liquid crystal apparatus using ferroelectric liquid crystal, shock resistance is weakened because of the high regulating ability of a liquid crystal phase (smectic phase) to be used.
In order for the above-mentioned polymer dispersed liquid crystal display apparatus to have regulating ability, it has been disclosed to use a photomask through which UV-rays are radiated to a mixture of liquid crystal and a photocurable resin material so as to deposit a polymer.
Japanese Laid-Open Patent Publication No. 1-269922 discloses a method including the steps of radiating UV-rays upon the mixture through a photomask, removing the photomask, and then radiating UV-rays onto portions which have been covered with the photomask, thereby forming regions having different characteristics. Also disclosed is a liquid crystal display apparatus produced by the method. This apparatus is the type driven in a scattering-transmission mode.
Japanese Laid-Open Patent Publication No. 5-257135 discloses a liquid crystal device produced by injecting a mixture of a liquid crystal material and a photocurable resin between substrates on which an alignment film having an alignment regulating force is respectively formed and using UV-rays to radiate the mixture through a photomask. This device is the type for static drive in which patterning is performed from outside a cell because threshold characteristics inside the photomask are different from those outside the photomask.
In general, in order to improve viewing angle characteristics in a liquid crystal apparatus of a non-scattering mode by enhancing an orientation state of liquid crystal molecules, the liquid crystal molecules are required to be aligned in at least three directions in the pixels. For example, referring to FIG. 1A-1C, liquid crystal molecules 13 are aligned differently depending upon the liquid crystal region surrounded by a polymer 12 between two substrates 11. In such an orientation state, an apparent refractive index of the liquid crystal molecules is averaged when they are seen in directions A and B in an intermediate gray scale. As a result, the contrasts seen from both directions A and B become identical, and viewing angle characteristics are enhanced, compared with a liquid crystal display apparatus in a TN mode shown in FIG. 2A-2C.
Japanese Laid-Open Patent Publication Nos. 4-338923 and 4-212928 disclose wide viewing angle liquid crystal display apparatuses in which viewing angle characteristics are improved by attaching two polarizing plates to the polymer dispersed liquid crystal display apparatus so that the plates are orthogonal to each other.
Furthermore, Japanese Laid-Open Patent Publication No. 5-27242 discloses a method for producing a non-scattering liquid crystal apparatus made of a composite material of liquid crystal and a polymer material, utilizing phase separation of a mixture containing liquid crystal and a photocurable resin. According to this method, the generated polymer randomly align liquid crystal domains and liquid crystal molecules rise in different directions depending upon each domain under the application of a voltage. Therefore, an apparent refractive index from each direction becomes equal, and viewing angle characteristics are improved in an intermediate gray scale.
In recent years, the present inventors found the following: By using a photomask during photopolymerization of a mixture of liquid crystal and a photocurable resin material, liquid crystal molecules in a liquid crystal device to be obtained are omnidirectionally aligned (in a spiral shape) in pixel regions. This spiral orientation of the liquid crystal molecules is controlled with a voltage, whereby the liquid crystal molecules move as if part of umbrellas which are opened or closed. Thus, a matrix-type liquid crystal display apparatus with improved viewing angle characteristics is obtained (Japanese Laid-Open Patent Publication No. 6-301015). However, this apparatus has problems with respect to contrast, response time, roughness, and the like because of a resin material mixed into a liquid crystal material.
Thus, as described above, in a polymer dispersed liquid crystal display apparatus in a non-scattering mode, the following methods have been demanded: a method for forming liquid crystal droplets in a uniform shape and exactly regulating the positions of liquid crystal droplets, a method for aligning liquid crystal molecules omnidirectionally in pixels which is required for improving viewing angle characteristics, and a method for preventing contrast from decreasing due to depolarization caused by scattering at interfaces between liquid crystal molecules and a polymer.

Photopolymerizable resin material composition comprising fluorinated (meth)acrylates


A conveyor mechanism is provided for transporting objects. The conveyor mechanism, includes a single continuous belt member wrapped around a plurality of chain loops and also around a pair of spaced-apart pulleys disposed outboard thereof. A chain drive drives the chain loops and the chain loops drive the surrounding belt. A frame having substantially frictionless channel guides provides additional support to the upper track portion of each chain so that the belt member can accommodate heavy loads. The belt has at least one guide ridge formed in its substantially flat undersurface. The belt turning rollers are provide with circumferential grooves which are sized to engage the raised guide ridge on the undersurface of the belt, so that cooperation between the grooves in the turning rollers and the ridge on the belt maintains lateral tacking of the belt. Further lateral stability is provided by disposing of pair of chain guides on either side of the ridge along the upper run of the belt.

Conveyor mechanisms for loading and unloading cargo are well known. Such conveyor mechanisms are commonly used, for example, to load and unload various products (e.g., bulk agricultural crops, aggregate material, construction material, boxes, crates, etc.) from a vehicle (e.g., a trailer, a semi-trailer, a wagon, a truck, etc.).
Such conveyor mechanisms typically include a pair of chain loops disposed within and along the floor (or bed) of the trailer. The chain loops are usually engaged by a pair of drive sprockets arranged on a first axle and also by a pair of associated idler sprockets arranged on a second axle. Because the axles are ordinarily disposed at opposite ends of the trailer, the chain loops are generally obround in shape. A plurality of transverse slats extending between links of the opposed chains provide support to the chain loops and enable the conveyor mechanism to transport heavier loads. Such conveyor mechanisms are commonly known as slat-type conveyors. Examples of these types of devices are provided by U.S. Pat. Nos. 3,876,089 (Moser), 4,055,265 (Eisenman), 4,664,583 (Gust), and 5,102,285 (Gust).
In order to prevent abrasive material from damaging the chains, some slat-type conveyors include flexible belting which spans the width between the chains. By way of example, U.S. Pat. No. 4,664,583 (Gust) discloses a slat-type conveyor in which a plurality of segmented belts are attached to the slats. U.S. Pat. No. 5,102,285 (Gust), in contrast, discloses a slat-type conveyor in which a single continuous belt which is wrapped around the chains and is affixed to the various slats. The single belt slat-type conveyor disclosed in U.S. Pat. No. 5,102,285 (Gust), however, suffers from noted deficiencies which will be discussed herein.
First, in order to prevent slipping, bunching, and/or stretching of the belt at the points where the chains reverse direction (i.e., at the ends of the generally obround chain loops), the pitch diameter of the chains must coincide with the pitch diameter of the belt. In order to align these pitch diameters, however, the chain loops must be located outboard (i.e., beyond the width) of the belt. As a result, the belt cannot be wrapped around the chain loops, but must instead be wrapped around the slats which interconnect the chain loops. Furthermore, single belt slat-type conveyors of this type are limited to only two chain loops (i.e., one chain loop on either side of the width of the belt).
Second, single belt slat-type conveyors of this type are expensive to manufacture and service. For instance, because the load of the cargo is ultimately shared by only two chain loops, both of these chains need to be very sturdy (i.e., large and expensive). In a like manner, the slats interconnecting the two chain loops need to be spaced-apart at relatively close intervals (i.e., numerous slats are required). Also, the belt needs to be joined to the slats at regular intervals. This not only significantly increases assembly labor, but also makes field disassembly and repair extremely difficult and time consuming.
Third, single belt slat-type conveyors of this type are subject to damage by the contents of the cargo. The slats, for example, are susceptible to deformation by rocks or other solid objects in the trailer. The chains are also prone to damage because they ultimately support the weight of the cargo. More significantly, however, should one of the chains break during use, virtually all of the slats would be destroyed.
Fourth, single belt slat-type conveyors of this type are subject to inherently high frictional losses caused, in part, by the weight of the cargo. More specifically, the weight of the cargo frequently causes the slats to wear or rub against the bed of the trailer which, in turn, increases the power requirements of the motor.


An upper body strengthening system features a generally U-shaped planar base having a vertical frame perpendicularly located in a base middle section. A seat is perpendicularly and adjustably located on a vertical frame middle along with a cushioned back rest. The system features a first arm having a first arm first end pivotally located on a vertical frame first side and a second arm having a second arm first end pivotally located on a vertical frame second side. A first palm plate is located offset from a first arm inside surface and a second palm plate is located offset from the second arm inside surface. A plurality of weight components is located close to a vertical frame bottom. The plurality of weight components is stackably located on a cable assembly (pulley system) that traverses a weight component rack and is connected to the first arm, and the second arm.

A weight machine is a piece of equipment used for weight training using gravity as a primary source of resistance. It uses a combination of cables, pulleys, levers, wheels, and inclined planes to convey that resistance to the person using the machine. The present invention features an upper body strengthening system for decompressing the upper body muscles in a single motion for straightening the spine, strengthening the core and building posture,
Any feature or combination of features described herein are included within the scope of the present invention provided that the features included in any such combination are not mutually inconsistent as will be apparent from the context, this specification, and the knowledge of one of ordinary skill in the art. Additional advantages and aspects of the present invention are apparent in the following detailed description and claims.


A cap to be worn on the top of the head comprises a crown that is fabricated to simulate approximately one-half of a game ball. The crown is formed by a plurality of generally triangular-shaped fabric gores which are collectively stitched together along their lengthwise edges, and the outer surface of each of the gores includes a pattern section which, when individual fabric gores are secured together to form the crown, are aligned to provide a half game ball.

Caps have traditionally adorned wearers' heads for a variety of different reasons, such as for warmth or to shield the wearer's eyes from the sun. One type of popular cap worn today takes the shape of a traditional baseball cap, i.e., a cap like that worn by the members of a baseball team. A baseball cap basically comprises a generally hemispherically shaped crown with a substantially flat brim that juts out from the crown above the wearer's eyes when the cap is worn. While caps of such design are often associated with the sport of baseball, the baseball cap design has received widespread popularity for other purposes, such as for caps to promote athletic teams of other sports like football and basketball, for caps to promote a sponsor company or product, or as caps just for general wear and usage.


The invention relates to a reflexive optical screen that can show bright images with efficiency, and a viewing system that incorporates the same, and provides a reflexive optical screen 10 comprising a plurality of zonal V-grooved reflecting surfaces substantially concentrically located within a given surface and having a retrorelection action. Each of the zonal V-grooved reflecting surfaces comprises mutually orthogonal two conical facets 2 and 3 in a section orthogonal to a ridgeline of a V groove, and the conical facets 2 and 3 of each of the zonal V-grooved reflecting surfaces are located such that a bisector 5 for angles that the two conical facets 2 and 3 make in a section of each of the zonal V-grooved reflecting surfaces is oriented in the direction of a light ray incident on a position thereof.

The present invention relates generally to a reflexive optical screen and a viewing system that incorporates the same, and more particularly to a less dependent-on-angle, high-efficiency bright reflexive optical screen and a viewing system that incorporates the same.
So far, reflexive optical screens and display systems that incorporate them have been proposed as set forth in Patent Publications 1 and 2 or the like.
Patent Publication 1
JP-B 4-11002
Patent Publication 2
JP-A 2000-122176
Reflexive optical screens relying on glass beads are relatively dark because of increased light losses in glass beads and among glass beads. A (angle dependence) problem with a corner cube type arrangement is that upon oblique incidence of light rays, there is no available reflexivity.

Reflexive optical screen, and viewing system incorporating the same


A system for encapsulating a crawlspace against the entry of sub-soil water vapor and also against the entry of external ground water from the crawlspace walls and for completely isolating the building from water vapor from the earth. The present system comprises applying over the floor of the crawlspace, generally a dirt floor but sometimes a poured concrete floor, a continuous durable sealed plastic film barrier layer or laminate, and extending the barrier film vertically-upwardly to cover and seal the interior peripheral walls enclosing the crawlspace to an elevation at least slightly greater than the elevation of the ground in contact with the exterior surfaces of the peripheral walls and preferably to the tops of the peripheral walls. This encapsulates the dirt surface of the entire crawlspace against the penetration of external ground water or floor water and also sub-soil water and water vapor onto the surface of the plastic barrier film and into the crawlspace atmosphere.

1. Field of the Invention
The present invention relates to a novel and efficient system for preventing the entry of ground moisture into so-called crawlspaces of buildings such as homes. Moisture is very damaging to wood structural support members of buildings and is absorbed by such members from the ground and from moist air in contact therewith.
Many buildings and homes are built without basements, and are elevated a few feet above the ground on support members such as stone, poured concrete or concrete block walls. In many cases the crawlspace between the ground surface and the wooden floor beams or joists of the house is at a level below the level of the surrounding soil, or below the level of saturated soils in wet weather, so that water flows into and is absorbed up through the floor of the crawlspace, usually a dirt surface, from adjacent ground areas of higher elevation and up from the sub-soil. Such water is drawn into the headroom of the crawl space in the form of water vapor and penetrates the wooden structural members of the building, causing wood rot, mold, odors, attraction of ants and other insects, rodents etc. Also, the escape of dangerous radon gas from the ground into the crawlspace and into the building is another problem.
Even in crawlspaces that do not leak or flood from groundwater, the earth below the crawlspace, and forming the floor of the crawlspace, has a high humidity level most of the time, and this water vapor rises into the crawlspace to produce a humid air atmosphere within the crawlspace, which moves upwardly to penetrate the structural framing and living spaces above the crawlspace.
Mold spores exist in air and grow into destructive mold in the presence of organic material, such as moist wood. Humidity levels of from 50% to 90% are common in crawlspaces, even those that have never flooded. Mold can grow on dirt, insulation, wood framing and even under carpeting on the floor within the home. Mold digests and destroys organic materials as it feeds on them. Damp environments also provide an inviting environment for insects such as termites, ants and similar critters which feed on moist organic material such as structural support wood and can contribute to the destruction and collapse thereof.
2. State of the Art
In an effort to prevent the penetration of water and water vapor into building crawlspaces it has been proposed to apply a continuous moisture barrier layer such as a thick plastic film over the dirt floor of the crawlspace. This has been proven to be unsatisfactory, per se, since water is drawn up from the ground, beneath the barrier, and leaks and/or vaporizes around the edges of the barrier into the crawlspace environment. Also, ground water penetrates the walls of the crawlspace and/or otherwise enters the crawlspace and accumulates on top of the vapor barrier film and generates moisture which permeates into the wooden structural supports of the building resulting in rot and decay, mold and fungus, odors and vermin.
U.S. Pat. No. 5,6.42,967 discloses a system in which the barrier film is associated with an excavated pit filled with aggregate.
Water entering the crawlspace collects in the pit and is pumped from a sump when necessary. A vapor barrier film is applied over the dirt floor of the crawlspace, and over the pit and sump areas, to prevent moisture from entering the building. Such a system is unsatisfactory because it has no means for preventing the entry of ground water and its accumulation on the surface of the barrier film, with the disadvantages discussed supra.
U.S. Pat. No. 5,890,845 discloses another system in which the dirt floor of a crawlspace is covered with a layer of lightweight concrete material applied over a plastic film barrier layer. While the barrier layer blocks the penetration of moisture from the ground up into the crawlspace, the system provides no means for preventing the entry of ground water through the walls of the crawlspace onto the surface of the concrete material where it can accumulate in surface depressions and develop moisture, with the disadvantages discussed supra.
In summary, there is a need for a system which prevents the entry of water from the sub-soil and also from higher elevations of the surrounding ground, such as excessive ground water caused by rain, snow and/or flooding, into crawlspaces directly or through concrete block walls which surround and enclose the crawlspace.
The present invention provides a novel simplified system for waterproofing a crawlspace against the entry of sub-soil water vapor and also against the entry of external ground water from the crawlspace walls and further completely isolates the building from water vapor from the earth. The present system comprises applying over the floor of the crawlspace, generally a dirt floor but sometimes a poured concrete floor, a continuous sealed plastic film barrier layer, and extending the barrier film vertically-upwardly to cover and seal the interior peripheral walls enclosing the crawlspace to an elevation at least slightly greater than the elevation of the ground in contact with the exterior surfaces of the peripheral walls and preferably to the tops of the peripheral walls. This encapsulates the dirt surface of the entire crawlspace against the penetration of external ground water or flood water and also sub-soil water and water vapor onto the surface of the plastic barrier film and into the crawlspace atmosphere.
According to an embodiment of the invention the dirt surface of the crawlspace may be first provided with a sump pit and/or a drainage trench system for the collection of sub-soil water that leaks in from the crawlspace floor or walls under the barrier layer. A perimeter drain conduit or sump pump may be associated with the sump pit or drainage trench, depending upon the degree of wetness of the crawlspace and the grade and elevation of the exterior ground surrounding the floor of the crawlspace, to discharge excessive amounts of water accumulated beneath the barrier layer to areas exterior to the crawl space.


A communications system includes communications terminals connected to a management server. The management server includes a terminal manager managing data center identification information-acquiring identification information items for acquiring identification information items of data centers available to a predetermined one of the communications terminals in association with the identification information items of the data centers, a service manager managing services available to the predetermined communications terminal in association with the identification information items of the data centers, and an access authorization verification processor managing access to the services, based on the identification information items of the data centers available to the predetermined communications terminal in association with the data center identification information-acquiring identification information items, and the identification information items of the data centers in association with the services available to the predetermined communications terminal when an inquiry about the services available is received from the predetermined communications terminal.

1. Field of the Invention
The disclosures discussed herein relate to a communications system.
2. Description of the Related Art
Conference systems capable of conducting a remote conference between remote places via communications networks such as the Internet have recently been widespread. In such a conference system, in a conference room where one of the attendees of the remote conference is present, images of that attendee and the like in the conference room are imaged and sound of spoken words or statements are collected by using a terminal apparatus of the remote conference system, and the images and collected sound are converted into digital data, and the converted digital data are transmitted to a counterpart attendee. The images are displayed on a display and the sound is output via a speaker in a conference room of the counterpart attendee to conduct a conference between the remote places close to a state of an actual conference. In such a system, in addition to services for conducting the conference, there are provided various services such as a service for updating terminal apparatuses, and a service for registering or managing destinations of other terminal apparatuses that conduct the conference.
For example, there is a technology known in the art to control accessible services for each of terminals by discriminating services accessible by the terminals based on the presence or absence of access authorization (e.g., Japanese Laid-open Patent Publication No. 2000-174934, hereinafter referred to as "Patent Document 1").
In the related art transmission management systems, where two or more servers that provide various types of services are present in two or more data centers (hereinafter called "DCs"), it may be preferable that the servers accessible by the transmission terminals be flexibly controlled. For example, in a case where the DCs are geographically separated, it may be preferable that access management be flexible to allow the transmission terminal to access the services associated with a DC near the access area of the transmission terminal, or to allow the transmission terminal to access the services of another DC when the transmission terminal fails to access the services of the original DC in the access area of the transmission terminal for some reasons.

Communications system, management server, and communications method


A semiconductor integrated circuit includes a substrate, an oxide layer formed on an upper surface of the substrate, a plurality of polysilicon members arranged at constant intervals in a matrix on an upper surface of the oxide layer and including at least one first polysilicon member and a plurality of second polysilicon members, and a diffusion layer formed in the substrate under the first polysilicon member and electrically coupled to an interconnect for supplying a first power supply voltage, wherein the first polysilicon member is situated at an outermost periphery of the matrix and electrically coupled to an interconnect for supplying a second power supply voltage, and the plurality of second polysilicon members are situated inside the outermost periphery of the matrix.

Polysilicon formed on a field oxide layer may be used as a resistor element for use in the semiconductor integrated circuit. In such a case, a plurality of polysilicon members having the same shape and the same characteristics may be formed as a resistor element unit for the purpose of providing a desired resistance value. The number of polysilicon members connected in series or in parallel is then adjusted to adjust the resistance value. The size and shape of such polysilicon members are required to be highly precise. The polysilicon members may thus need to be manufactured under the same process conditions. Namely, the conditions of photolithography and etching performed during the wafer process may need to be maintained constant with respect to each polysilicon member.
When a plurality of polysilicon members having the same shape are arranged in matrix form at constant intervals, polysilicon members situated in the interior of the matrix are formed under the same process conditions because each of these polysilicon members has identical positional relationships with the surrounding adjacent polysilicon members. The polysilicon members situated at the periphery of the matrix, however, have adjacent polysilicon members only on one side thereof, and, thus, are subjected to different process conditions than the conditions applied to the interior polysilicon members which are surrounded by adjacent polysilicon members on the four sides thereof. Accordingly, the polysilicon members situated at the periphery are provided, as dummy members unused for actual circuit operations, only for the purpose of achieving constant process conditions for the interior polysilicon members.
FIG. 1 is a plan view illustrating an example of a related-art resistor-element unit. FIG. 2 is a cross sectional view of the resistor-element unit illustrated in FIG. 1 as taken along a line A-A′.
As illustrated in FIG. 1 and FIG. 2, a resistor-element unit 10 includes a P-type substrate 13, a field oxide layer 14 formed on the P-type substrate 13, and a plurality of polysilicon members 11 and 12 formed on the field oxide layer 14. The polysilicon members 11 and 12 are arranged in matrix form at constant intervals which are an interval "a" in the vertical direction and an interval "b" in the horizontal direction. The polysilicon members 12 are dummy polysilicon members situated at the periphery of the matrix, and the polysilicon members 11 are resistor-element polysilicon members situated in the interior of the matrix.
The resistor-element polysilicon members 11 situated in the interior of the matrix are formed under the same process conditions because each of these polysilicon members has identical positional relationships with the surrounding adjacent polysilicon members. Accordingly, the resistor-element polysilicon members 11 have the same resistor-element characteristics. A desired resistor value can thus be obtained by connecting a desired number of resistor-element polysilicon members 11 in series or in parallel.
The dummy polysilicon members 12 situated at the periphery of the matrix, however, have adjacent polysilicon members only on one side thereof, and, thus, are subjected to different process conditions than the conditions applied to the interior resistor-element polysilicon members 11 which are surrounded by adjacent polysilicon members on the four sides thereof. Accordingly, the dummy polysilicon members 12 situated at the periphery are formed, as dummy members unused for actual circuit operations, only for the purpose of achieving constant process conditions for the interior polysilicon members.
In the resistor-element unit 10 formed as described above, the dummy polysilicon members 12 situated at the periphery are not used as part of an actual operating circuit, which means that there are needless elements and areas provided in the semiconductor integrated circuit chip. This gives rise to problems such as an increase in chip size and a cost increase.

Semiconductor integrated circuit having polysilicon members


Embodiments of this invention provide an apparatus that allows for the biodegrading of materials including food waste, food service paper products, wet waste, paper cardboard, landscape waste, and other organic solids using a prefabricated, multi-modal, portable, modular system that includes a series of bio-mimicry vessels in multiple mode deployment.

Currently, anaerobic digestion, aerobic digestion, gasification, product-packaging separation, trans-esterification, drying, and prilling are used as independent processes. Each process requires feedstock as input and is designed to produce one or more marketable products as output. Additionally, each of these processes produces by-products (also called co-products) that may become commercially valuable product and a source of revenue, or an operating expense for disposal, or an environmental liability. Examples of these by-products are digestate (digestion yields), new soil product, new fuel product, bankable carbon to be sequestered, woody oversized particles (composting yield), ash (gasification yields), and glycerin (trans-esterification yields).
Generally, energy output is also considered a by-product. For example, heat production from composting, biogas from digestion, and syngas from gasification are by-products. Accessories fueled by biogas from digestion include hot water heaters, electricity generation, radiant space heaters, lighting, fireplaces or fire pits, barbeques, cooking equipment, and CNG vehicle fueling.
Organic waste processing facilities are typically designed at a scale of 100 to over 1,000 tons per day. They exist in four industrial sectors: wastewater treatment, manure treatment, industrial process plants, and urban organic recycling plants. These processing facilities control feedstock preparation, residence time, temperature, moisture, density, oxygen, pH, and particle size. They may also control odors, typically with a one-stage treatment system.
Commonly, design and deployment of facilities that employ anaerobic digestion, aerobic digestion, gasification, product-packaging separation, trans-esterification, drying, or prilling processes requires between 2 and 4 years from initial project kickoff to actual commissioning. They are also typically designed as large, centralized facilities based upon the presumption that larger facilities are more cost-efficient due to the larger economies of scale. This presumption has proven to be incorrect or erroneous in most urban organic recycling situations due to the high costs of odor control, the high costs of hauling and transportation of feedstocks (as inputs), and the high costs of hauling and transportation of by-products (as outputs) over increasingly longer distances.
In certain circumstances, or geographic areas, the construction of these types of facilities may also face an added set of problems as local conditions may make it extremely problematic sourcing the requisite materials for constructing the facilities, or constructing with poor weather conditions, or constructing with poor-quality geotechnical conditions. In such circumstances, prefabrication of portable systems reduces risk and ensures more reliable performance of facilities that employ anaerobic digestion, aerobic digestion, alternating digestion, gasification, product-packaging separation, trans-esterification, drying, or prilling processes.
There is a desire and need for renewable energy, energy independence, distributed energy generation, diversion of organic waste from disposal, and zero waste systems. ("Zero Waste Movement"). Coupling two or more of the above technologies (modes) together in a synergistic way to reduce by-product waste and increase usable energy/heat production will help achieve the goals of the Zero Waste Movement. For example, trans-esterification can benefit from a downstream anaerobic digester to convert surplus glycerin into valuable energy and fertilizer. The practice of coupling these technologies can be referred to as by-product synergy. The use of machinery that replicates natural systems that are similar to those used by plants or animals is referred to as bio-mimicry. For example, an anaerobic digester replicates a cow's gastrointestinal tract with regard to mastication, multiple stomachs, gas production, and fertilizer production.
There is also a need to install smaller scale digester bio-mimicry systems as stand-alone systems near locations where the waste products are generated to minimize or eliminate trucking waste. By delivering prefabricated smaller scale bio-mimicry systems to the point of use, reliable cost-efficient bio-mimicry systems may be employed by more users in more diverse locales. The combined effect of use of smaller scale multi-modal systems, the elimination of trucking costs, and prefabrication creates the benefit of lower risk, distributed utilities, and more local resiliency regarding jobs, energy, food, and other resources.

Pre-fabricated multi-modal bioenergy systems and methods


The present invention relates to a hydrothermal method for preparing a doped vanadium dioxide powder, the doped powder having a chemical composition of V1-XMXO2, 0<X≤0.5, and M is a doping element, which is introduced to control a particle size and a morphology of the doped powder, the doping element M is selected from a group consisting of manganese, iron, cobalt, nickel, copper, zinc, tin, indium, antimony, gallium, germanium, lead and bismuth, the method comprising a step of a precursor treatment of titrating a quadrivalent vanadium aqueous solution with a basic reagent to obtain a precursor suspension, wherein the precursor treatment involves titrating the quadrivalent vanadium aqueous solution until the emergence of the precursor suspension. The preparation methods for the present invention are easy to implement, low in cost, provide high yield, and are suitable for large scale production.

Due to the worldwide growing energy crisis, energy conservation and emission reduction are more important today than ever before. In December of 2009, United Nations Environment Programme reported that building energy consumption occupies about one third of global greenhouse gas emissions. In China, building energy consumption overall accounts for 30% of the total available primary energy. In particular, energy exchange through windows accounts for over 50% of energy consumed through a building's envelope by means of conduction, convection and radiation. To reduce energy consumption, it is necessary to develop smart windows which are designed to intelligently control the amount of transmitted light and heat (mainly in the near infrared region) in response to an external stimulus.
At present low emissivity glass which has high visible transmittance and high infrared reflection is prevalent in the energy saving glass market and can greatly reduce heat transfer from indoors to outdoors compared to the ordinary glass and traditional building coating glass. However, low emissivity glass is expensive and not intelligent enough. Therefore, there is urgency to develop the next generation of smart windows with independent intellectual property rights.
Vanadium dioxide (VO2) with a Mott-phase transition is a key material for application to thermochromic smart windows because it exhibits a reversible transformation from an infrared-transparent semiconductive state at low temperatures to an infrared-transparent semiconductive state at high temperatures, while maintaining visible transmittance.
Various techniques including the sol-gel method, chemical vapor deposition, sputtering deposition, pulsed-laser deposition, and ion implantation have been utilized to deposit VO2 films, however many problems exist, such as expensive equipment, complex control processes, poor stability, low deposition rate and unsuitable mass production. In addition, the application of smart windows with VO2 films is restricted because it can only be applied to new glass. Therefore, on the basis of energy saving reconstruction, VO2 powders with intelligent energy-saving effect are preferably coated on existing ordinary glass.
The vanadium-oxygen phase diagram shows nearly 15-20 other stable vanadium oxide phases besides VO2, such as VO, V6O13 and V7O13. The formation of VO2 occurs only over a very narrow range of oxygen partial pressures. Additionally, more than ten kinds of crystalline phases of vanadium dioxide have been reported, including tetragonal rutile-type VO2 (R), monoclinic rutile-type VO2 (M), triclinic VO2 (P*(2)), tetragonal VO2 (A), monoclinic VO2 (B), VO2 (C), orthorhombic VO2.H2O, tetragonal VO2.0.5H2O, monoclinic V2O4 and V2O4.2H2O. Only the rutile-type VO2 (R/M) undergoes a fully reversible metal-semiconductor phase transition (MST) at approximately 68° C. However, the preparation of VO2 (M/R) powder has become a technical difficulty for the application of smart windows.
High temperature sintering was usually used to fabricate VO2 powder. A method to fabricate vanadium dioxide powder doped with tungsten, in which VO2 (B) powder is first synthesized and then heat treated at 350˜800° C. to attain VO2 (R) powder is issued in patent (CN10164900). Moreover, many methods including spray pyrolysis (U.S. Pat. No. 5,427,763), thermal cracking (CN1321067C), sol-gel (U.S. Pat. No. 6,682,596) and reverse microemulsion (WO2008/011198 A2) have been used to synthesize VO2 powder. A patent (CN101391814) from our research group describes one-step hydrothermal synthesis of VO2 (M/R) powders.

Preparation method of doped vanadium dioxide powder

SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES


Systems and techniques for single-wire communications are described. A described technique includes detecting transitions on a single-wire bus that are produced by a host device, determining an estimated baud rate of the host device based on the transition, and communicating with the host device based on the estimated baud rate. Determining the estimated baud rate can include charging a capacitor based on a charging rate in response to a detection of a first transition of the transitions, sampling a capacitor voltage associated with the capacitor in response to a detection of a second transition of the transitions, and adjusting the charging rate based on a comparison between the capacitor voltage and a reference voltage.

Devices can use a single-wire bus for bidirectional communications. A host device can be connected with a slave device via a single-wire bus. Both the host device and the slave device can be connected to ground to complete the circuit. In some instances, a slave device is implemented as an integrated circuit that is packaged in a housing that contains three or more pins: one for the single-wire bus, one for an input voltage, and one for ground. In some instances, a slave device is implemented as an integrated circuit that is packaged in a housing that contains two pins: one for the single-wire bus and one for ground. The slave device can be powered parasitically from the single-wire bus. A single-wire bus can interconnect two or more devices.

Single-wire communications using iterative baud learning


The invention relates to a method of more efficient data transmission, in particular transmission of structured data, such as web pages, in a system comprising a server means and a client means which are interconnected via a plurality of proxy means, including a server proxy means and a client proxy means.

1. Field of the Invention
The invention relates to the field of transmitting structured datasets between client and server means.
2. Discussion of the Related Art
A structured dataset in particular may be a web page composed of a base file and a number of subfiles, as diagrammatically shown in FIG. 2. The web page illustrated is described in the base file x0 (for instance, in the Hypertext Markup Language, HTML), and the base file may contain references to other objects potentially needed for presenting the web page. Such additional objects especially may exist in the form of files which then are referred to as subfiles (to the base file). FIG. 2 shows eight such objects (subfiles) x1, . . . , x8. The objects may be text objects, picture objects, graphics, audio, video objects, etc. and furthermore they, too, may contain structured information (e.g. in HTML) which in turn likewise may include references to further subfiles, just like the base file. This nesting may be continued recursively. The number of subfiles and their nesting depth per web page may be arbitrary as needed and may be different for different sites.
A prior art method of this kind is described in DE 100 39 901. Moreover, DE 100 39 901 describes a method which, by resorting to a client proxy means and a server proxy means, allows much faster transmission through transmission networks in which, for example, transmission delays are great. Such transmission networks with disadvantageous great delays in transmitting, for instance, may be satellite networks.
An example of the prior art which existed prior to document DE 100 39 901 and was critically assessed in that publication is illustrated in FIG. 3. A client means (such as a web browser) accesses a server means (such as a web server) through two simple proxy means e.g. on the internet, for instance, in order to fetch a web page structured, for example, as illustrated in FIG. 2. Communication between client and server means takes place especially through a network having a high transmission time (e.g. a satellite network). When accessing the web page, the client means first sends a request for the base file x0 and then receives it in a first reply from the server means. Thereupon, the client means analyzes the base file x0 and finds a number of embedded objects x1, . . . , x8 which it subsequently fetches in two rounds from the server means. Due to the high transmission time within the network, the operation from the first inquiry for the web page to the complete presentation in the client means takes very long.
According to DE 100 39 901 this state of the art is improved by introducing a distributed proxy consisting of a client proxy means and a server proxy means, as illustrated in FIG. 4. Here, both the client and the server proxy means may be placed so as to enclose the network with great transmission delay. As may be gathered from FIG. 4 (and described in detail in DE 100 39 901), the efficiency in accessing structured datasets is improved by a request (A) which causes the analysis of a base file x0 (and corresponding subfiles) to be undertaken additionally (C) in the server proxy means after the base file has been received (B) from the server means and before, during, or after it is forwarded (D) to the client proxy means. The server proxy means independently demands (E) the objects thus located (in this example subfiles x1, . . . , x8) from the server means, and the objects obtained from the server means likewise are forwarded (F) to the client proxy means, even if they have not yet been asked for. The objects (files, subfiles) received from the server proxy means are buffered in the client proxy means and, thereafter, any requests from the client means for these objects are answered (G) out of the memory means. This way of proceeding will be referred to below as "prefetching" since subfiles or objects are prerequested from a server means.

Method for prefetching of structured data between a client device and a server device


A radiation field characteristic measuring apparatus comprises a rotating device for rotating a tested object through the total solid angle thereof, and a device for receiving electromagnetic waves radiated from the object, thereby measuring electromagnetic field characteristics of the object with respect to the total solid angle. According to the present invention, almost all the components of the rotating device are formed of a nonmetallic material, and spaces to allow the passage of the electromagnetic waves are formed in the components of the rotating device. Thus, reflection and scattering of the electromagnetic waves are suppressed, so that the radiation field characteristics of the tested object, with respect to the total solid angle thereof, can be obtained with high accuracy. Also, the effective radiated power is measured with use of the arrival probability density function of radio waves as a weighting function. By doing this, the evaluation index of an antenna best suited for the actual radio conditions can be obtained.

1. Field of the Invention
The present invention relates to a radiation field characteristic measuring apparatus, and more particularly, to an apparatus for measuring radiation field characteristics of a radio communication device and the like, with respect to the total solid angle thereof.
2. Description of the Related Art
Recently, radio pagers, cordless telephones, and other portable radio communication devices have been quickly changed into miniature high-function versions. The communication devices of this type are often provided with built-in antennas. In these devices, the characteristics of the built-in antennas are greatly influenced by changes of external environments, such as the conditions of electronic parts. Thus, it is very difficult to develop the built-in antennas independently. The radiation efficiency of the built-in antennas of the communication devices may be considerably lowered due to loss caused by the surrounding electronic parts or users' bodies. In developing the built-in antennas, therefore, they must be designed so that the lowering of their radiation efficiency is minimized Although the input impedance of small antennas can be adjusted relatively easily, it is often difficult for them to realize desired radiation pattern and radiation efficiency. Thus, the built-in antennas must be studied and developed in consideration of the influence of the surrounding electronic parts and the like. There may be two approaches, theoretical and experimental, to the design of the built-in antennas covering these circumstances. In actual product development, however, it is extremely hard to theoretically analyze the radiation characteristics including the influence of the complicated electronic parts, such as printed boards. Naturally, therefore, the experimental approach is required for the analysis of these effects. In order to improve the antenna radiation efficiency by the experimental method, it is necessary to establish a method of antenna radiation efficiency measurement in which the radio communication devices with a built-in antenna can be tested in their actual working state, without the additional use of a measuring cable or the like. In consequence, there is a demand for the development of a measurement method which permits the measurement in the actual working state.
Theoretically, the radiation efficiency of an antenna can be obtained by integrating its radiation field with respect to its total solid angle. Practically, however, it has been regarded as difficult to measure radiation field characteristics of a tested object with respect to the total solid angle, in the VHF or UHF band within which most portable antennas are used. To the knowledge of the inventor hereof, no experimental results on such measurement have hitherto been reported. Thereupon, several other measurement methods for antenna radiation efficiency have been proposed. They include the Wheeler cap method and the Q-factor method, which are based on the measurement of the input impedance of the antenna, and the random field measurement method in which the tested object can be tested in its actual working state. Wheeler proposed the method (Wheeler cap method) in which a miniature antenna is covered by a method cap with a radius of about .lambda./6, and the radiation efficiency of the antenna is obtained by measuring the input impedance. Further, E.H. Newman et al. comparatively examined antenna efficiency measurement methods for a multiturn loop antenna based on the Wheeler cap method and the Q-factor method. Basically, these two methods are methods for obtaining the antenna radiation efficiency through the measurement of the antenna's input impedance, so that they can be easily applied to monopole antennas which can be set on a ground plane. In an actual radio communication device, however, the tested object must be fitted with some additional members, e.g., a coaxial cable for impedance measurement, a balun, etc. In measuring low-efficiency antennas with the radiation efficiency of -20 to -30 dB, such as those for radio pagers and the like, in particular, the balun and the measuring cable used are much larger in size than the built-in antenna. Accordingly, radiation from the cable and the balun greatly influences the measurement accuracy. Also, the efficiency measurement for the antennas of this type is influenced by the accuracy of an impedance measuring equipment.
J.B. Andersen proposed the method (random field measurement method or RFM) in which the effective radiation efficiency of an antenna is obtained from the median of the values of power received by tested portable antennas used in an urban district. The RFM method is an easy method in which measurement can be made in consideration of the influence of users' bodies, without requiring any such large-scale equipment as an anechoic chamber. Requiring outdoor operations, however, this method is subject to some drawbacks; long measuring time, great transmission power, hard operation under bad weather, jamming by external electric waves, etc. In an indoor RFM using radio wave scatterers, as an improved version of the RFM, measurement can be made relatively easily in ordinary laboratories or plants, without attaching any measuring cable or the like to the radio communication device in an actual working state. According to this method, however, the DDD-value is not low in every where, therefore the measuring point must be changed for equalization. Thus, there had not yet been developed measuring apparatuses which can measure radiation characteristics with respect to the total solid angle. In order to seek for the radiation efficiency of the tested object, therefore, a lot of studies have been made.
Meanwhile, new technology, such as the diversity system, will be introduced into future shifting communication, so that it is essential to grasp the radiation directivity of the tested object. Since the radiation directivity of a built-in antenna is different from that of an independent antenna, moreover, the radiation characteristics of the antenna cannot be accurately evaluated by only measuring its specific cut pattern and polarized waves. Thus, in studying built-in antennas, it is important to detect the radiation efficiency and directivity of the object quickly and accurately. Nevertheless, no such measuring apparatuses have yet been reported. Accordingly, it has been impossible to obtain correlation factors for the effective gain and diversity, based on the distribution of the arrival angle of electromagnetic waves, as an essential evaluation index for antennas for moving bodies.
The radiation field characteristics of a tested device with respect to the total solid angle thereof are the characteristics of electromagnetic fields at every point on a sphere or closed curved surface 11 with radius r around tested device 10, as shown in FIG. 1. These radiation characteristics are measured by using means which is equivalent to an arrangement of the tested device at each point on surface 11. More specifically, as shown in FIG. 2, device 10 is rotated around azimuth axis 13 and elevation axis 14, extending at right angles to each other, by means of rotating device 12, as shown in FIG. 2. On the other hand, receiving antenna 15 is situated at a predetermined distance from device 10, and electromagnetic waves received by antenna 15 are signal-processed by means of measurement control device 16. Thus, the radiation field characteristics with respect to the total solid angle are measured.
Conventionally, the rotating device for rotating the tested device is formed of metal. If metallic parts are likely to cause electric waves to scatter, thereby disturbing the measurement results, they are covered by means of a radio wave absorber to prevent the metal from influencing the measurement. If the frequency of the electromagnetic waves used is relatively high, e.g., within the microwave frequency band, the gain of the tested antenna is high, and the directivity is narrow or sharp. Therefore, a satisfactory measurement can be made by setting the metallic parts off the antenna beam. In the case of measuring the characteristics of electromagnetic waves with a relatively low frequency, e.g., within the VHF or UHF band, on the other hand, the following awkward situations will be caused. The rotating device includes a turntable for supporting the tested object and a supporting and rotating mechanism for supporting and rotating the turntable, which are formed of metal, as mentioned before. If the antenna size is fixed, moreover, the antenna gain for the VHF or UHF band is lower than that for the microwave frequency band. Thus, the directivity is wide enough to be applied to a microwave frequency band antenna. In consequence, it is difficult to prevent the antenna beam from being directed toward the metallic parts.
Accordingly, the inventor hereof proposed to improve the rotating device suited for microwaves into one suited for electromagnetic waves within the VHF or UHF band.
More specifically, in order to prevent the electromagnetic waves within the VHF or UHF band from being absorbed or scattered, the inventor hereof proposed to cover one lateral face of the turntable supporting and rotating mechanism by means of a radio wave absorber. In a region of the mechanism in one direction thereof, however, electromagnetic waves emitted from the tested device are absorbed by the radio wave absorber, so that the radiation field characteristics cannot be measured. Since the wavelength of the electromagnetic waves within the VHF or UHF band is relatively long, furthermore, the radio wave absorber must be as tall as about 1 m. Accordingly, there will be a very wide region in which the electromagnetic waves emitted from the tested device are absorbed by the radio wave absorber, and the field characteristics cannot therefore be measured. Thus, the conventional rotating device for microwaves cannot be improved into the one suited for the electromagnetic waves within the VHF or UHF band. This will be described more specifically with reference to a prior art arrangement.
An example of a prior art radiation field characteristic measuring apparatus is mentioned in "Toyo Technica Electronic Measuring Instrument Catalog" (1985), on page 708. In this conventional apparatus (Scientific-Atlanta, Inc. USA Model Tower 58710A series), a turntable for supporting a tested object (e.g., a scale model of an air plane furnished with an antenna) is mounted on the distal end of an azimuth shaft, whose proximal end is rotatably supported on an azimuth post by means of a bearing. The proximal end of the azimuth post is supported in a position eccentric to the center of rotation of an azimuth pedestal, which is supported on an elevation shaft. With this arrangement, the radiation field characteristics can be measured while rotating the tested object on the turntable around azimuth and elevation axes which extend at right angles to each other.
This prior art apparatus is used with a microwave frequency band, and the turntable, bearing, and pedestal are made of metal. Power is transmitted by means of a metallic propeller shaft. Thus, if this apparatus is used with a relatively low frequency band, such as the VHF or UHF band, the following problems arise. In the VHF or UHF band, the radiation characteristics of the tested object are not so sharp as in the microwave frequency band, so that the electromagnetic waves are reflected or scattered by the metallic parts. Thus, a high-frequency current flows through the turntable and the elongated propeller shaft. It is necessary, therefore, to use a radio wave absorber to cover the front portion of the metallic turntable which supports the tested object. In the region behind the turntable with respect to the tested object, therefore, the electromagnetic waves from the object are absorbed, so that the radiation field characteristics cannot be measured at all. With the VHF or UHF band, in particular, the thickness of the wave absorber must be as great as 1 m in consideration of the wavelength, so that unmeasurable regions are too wide to be practical.
Accordingly, there is a demand for the development of an apparatus which can highly accurately measure the radiation field characteristics of a tested device with respect to the total solid angle thereof. Such an apparatus is required particularly for a VUHF-band antenna with a wide beam angle.
In a conventional antenna whose wave arrival probability is not constant with respect to the total solid angle thereof, moreover, its evaluation index is obtained without considering distribution of the arrival angle of radio waves. Thus, the evaluation index of the antenna obtained is not suited for the actual radio conditions. This is because the radiation characteristics of the tested object cannot be measured with respect to the total solid angle.

Radiation field characteristic measuring apparatus


A liquid crystal display includes a first substrate, a second substrate, and a liquid crystal layer. The first substrate includes a first insulating substrate, in which a pixel area is defined, a gate line formed on the first insulating substrate, a data line crossing the gate line, and a thin film transistor connected to the gate line and the data line. The second substrate is opposite to the first substrate. The liquid crystal layer is interposed between the first and second substrates and includes a liquid crystal composition with a nematic-isotropic phase transition temperature (Tni) of 79° C. or above.

1. Field of the Invention
The present invention relates to a liquid crystal display and a method of manufacturing the same.
2. Description of the Related Art
A liquid crystal display includes a liquid crystal layer interposed between two substrates. The liquid crystal display is provided with electrodes which are formed on the substrates. The liquid crystal layer includes liquid crystal molecules. The alignment of the liquid crystal molecules is changed according to the electric field generated by the electrodes. Changing the alignment of the liquid crystal molecules adjusts the quantity of light passing through the liquid crystal display. Accordingly, an image is displayed.
Display apparatuses employing liquid crystal displays have been extensively used in devices such as mobile phones, personal digital assistants, personal computers, and televisions. The liquid crystal displays are often specifically developed to be suitable for use in the particular devices in which they are employed.
Recently, the use of portable device, including portable notebook computers has been increasing. Such devices require superior mobile convenience, and thus there is demand for liquid crystal displays that satisfy the requirements of low power consumption and high response speed.

Liquid crystal display and method of manufacturing the same