Disclosed is a process for the manufacture of an elastic polyurethane fiber, including mixing one component selected from among polystyrene polymers or polystyrene copolymers having a number average molecular weight of 50,000–500,000 with polyurethane having a number average molecular weight of 15,000–100,000, to prepare a polymer mixture, which is then spun. The polyurethane elastic fiber made by the method is also provided, which is greatly increased in heat set properties, with a very low rate of change of fundamental properties as the results compared with conventional elastic polyurethane fibers. Hence, the elastic polyurethane fiber can be directly applied for preparation of end products requiring superior heat set properties with no change of conventional conditions of the process.

1. Field of the Invention
The present invention is related to a process for making an elastic polyurethane fibers, and the elastic polyurethane fibers prepared by the above method. More specifically, the present invention relates to a process for preparing an elastic polyurethane fiber, including mixing a polystyrene polymer or copolymer having a number average molecular weight of 50,000–500,000 with polyurethane having a number average molecular weight of 15,000–100,000, followed by a spinning process; and thusly preparing elastic polyurethane fiber.
2. Description of the Related Art
Generally, polyurethane is obtained by firstly polymerizing polyol as a diol compound having a high molecular weight with excessive diisocyanate to form a prepolymer of an isocyanate-terminated polyol, which is then dissolved in a proper solvent, and added with a diamine- or diol-based chain extender for a second polymerization.
For the preparation of a polyurethane fiber, there are a dry spinning process, a wet spinning process, a chemical spinning process, or a melt spinning process. In the dry spinning process, a polyurethane is prepared in the melt, dissolved in a solvent to obtain a polyurethane solution, and then dry spun. Further, in the wet spinning process, a polyurethane is synthesized directly in a solvent. As it is formed, the polyurethane dissolves in the solvent to form a solution that is then dry spun. Also, the chemical spinning process is carried out by extruding an isocyanate-terminated prepolymer solution into an amine-based chain extender solution through a nozzle to effect a chain-extension.
In addition, the melt spinning process is performed by extruding melted polyurethane through a nozzle, and cooling the extruded polyurethane.
Thusly prepared polyurethane fiber may be mixed with other fibers, for example, polyacrylonitril fiber, wool, cotton, silk, etc., according to desirable end uses. As used in common, spandex has its meaning, that is a manufactured fiber in which the fiber-forming substance is a long chain synthetic elastomer comprised of at least 85% by weight of a segmented polyurethane.
The polyurethane fiber is variously applied, due to unique properties, such as high elasticity. According to the enlargement of applicable fields, there are required polyurethane fibers further having novel properties in addition to conventional properties. By this time, polyurethane fibers have been developed to have further enhanced heat resistance and elasticity and, in recent years, demands for polyurethane fibers having excellent heat set properties become gradually increasing.
Therefore, intensive research into improvement of heat set properties of the polyurethane fiber has been conducted. In this regard, Japanese Patent Publication Nos. Sho. 63-53287 and 63-53288 disclose method of improving heat set properties of an elastic polyurethane fiber by use of specific additives, such as a diisocyanate dimer or powdered silica. However, the above method is disadvantageous in that the additives are inconsistently dispersed into the polyurethane solution. Further, it is difficult to choose a proper mixing condition, and the polymerization process by itself becomes complicated.
In addition, Japanese Patent Publication No. Sho. 43-639 discloses a method of preparing polyurethane, including reacting a mixture of a polymer diol and a low molecular weight diol 1–3 times as much as the mol of the polymer diol, with a diisocyanate compound, to prepare a hydroxide-terminated prepolymer and an isocyanate-terminated prepolymer, which are then reacted together to produce a polyurethane polymer. However, thusly obtained polyurethane is subjected to only a melt spinning process.
Further, Korean Patent Laid-Open Publication No. 2001-5854 discloses a method of preparing an elastic polyurethane fiber, characterizes in that two prepolymers, each having an isocyanate termination and a hydroxide termination with relatively similar viscosities are reacted together to obtain a liquid polyurethane polymer, which is then continuously extruded through a nozzle. According to this method, since the two prepolymers have similar viscosities, it is possible to uniformly mix each other upon a second polymerization, thus increasing the mixing effect and spinning stability. However, the above method is more complicated process, compared to conventional processes of preparing an elastic polyurethane fibers. As well, since the mixing effect and spinning stability are obtained by controlling the conditions of the process, the above method is not practical.
Moreover, Japanese Patent Laid-open Publication No. Hei. 7-316922 discloses a relatively simple method capable of improving heat set properties of an elastic polyurethane fiber, in which when the polyurethane fiber is prepared by a conventional process, a part of a polyurethane component is replaced with a thermoplastic polyurethane resulting from the use of a diol as a chain extender of the second polymerization. The elastic polyurethane fiber prepared by the above method has an improved heat set properties, but is decreased in elongation, with a drastic increase of modulus.
Also, there is described a method of replacing a part of a conventionally prepared polyurethane by a low molecular weight styrene maleic anhydride-based copolymer having a number average molecular weight less than 5,000. However, with the intention of improving heat set properties and maintaining fundamental properties of the fiber, the above method is not preferable.
In Korean Patent Laid-open No. 2001-16788, there is disclosed a method of improving heat set properties of a polyurethane fiber by following an additional thermal treatment after a dry spinning. However, this method is disadvantageous in that other devices are further required, in addition to a conventional spinning device. Additionally, the fiber is excessively heated, thereby improving the heat set properties but decreasing fundamental properties, such as elongation and modulus.

Process for the manufacture of elastic polyurethane fiber and the elastic polyurethane fiber made thereby


An X-ray fluorescence analysis apparatus in which a collimator for defining a range of passage of X-rays, can be safely and simply attached and detached by providing a right-hand screw thread for attachment of the collimator to a housing, an X-ray generator, or an X-ray detector, and further providing a left-hand screw thread on a side of the collimator opposite to that of the right-hand screw thread. An attachment jig having a left-hand screw thread corresponding to the left-hand screw thread provided on the collimator is used to attach and detach the collimator.

The present invention relates to a fluorescent X-ray analysis apparatus for detecting secondary X-rays generated by a sample during irradiation with X-rays and carrying out elementary analysis.
An overview of the attachment and the detachment of the collimator of the X-ray fluorescence analysis apparatus with the thread mechanism for attachment and detachment of the collimator of the related art will be described in the following based on FIG. 2.
The collimator 4 is provided with circular indentations at 2 points which are further out than a hole on the collimator and on its diameter, and a jig 5 with a projection fits into the two indentations.
For attachment, the jig is hooked to the indentations of the collimator, the collimator is carried to the mounting point, and the thread section of the collimator is lined up with the thread section of the housing, the X-ray generator, or the X-ray detector, and the jig is then rotated.
For detachment, the projection of the jig is turned so as to line up with the indentation of the collimator, and after the thread has been detached, the indentation of the collimator is hooked onto the projection of the jig and then taken out from the inside of the housing.
However, in the method of the related art, there was a difficulty in rotating when screwing in or screwing out, and there was a danger of the collimator dropping off and damaging the detector, etc. inside the housing when carrying the collimator by hooking the indentation of the collimator with the projection of the jig.
Also, when the mounting position for the collimator was close to the direction in which gravity acts it was difficult to carry the collimator with the jig, making tools such as forceps necessary.
In order to resolve the foregoing problems, an external left-hand thread is provided coaxial on the opposite side of the side in which the right-hand thread of the collimator is formed, so that screw threads having opposite threading directions are provided on opposite sides of the collimator.
Also, utilizing a jig, having an internal left-hand thread with the same diameter as the external left-hand thread, and a cylindrical shape that is easy to operate with the structure around the mounting position, enables easy attachment and detachment.
Additionally, by providing the indentation (projection) for tightening on the collimator and the projection (indentation) for tightening on the jig, firm attachment is possible.
As mentioned above, in the fluorescence X-ray analysis apparatus in which the collimator is attached and detached by the thread mechanism, it is made possible to attach the collimator to and detach it from the housing, the X-ray generator, or the X-ray detector easily and safely by providing the left-hand thread on the collimator and preparing the cylindrical jig with the left-hand thread of the same diameter.
Firm attachment is also made possible by providing the indentation section and the projection section for tightening on the collimator and on the jig for attachment and detachment.


The spectrophotometer of the present invention measures a spectral reflectance of an object to be measured to thereby determine a color value of the object to be measured based on a color-matching function of an XYZ color system and the spectral reflectance. The spectrophotometer includes an irradiation unit configured to irradiate the object to be measured with light having a spectral intensity distribution in which a relative intensity at a wavelength at which the value of z reaches its peak in the color-matching function is equal to or greater than 0.5.

1. Field of the Invention
The present invention relates to a spectrophotometer that measures color of an object to be measured by specifying the spectral reflection property of the object to be measured.
2. Description of the Related Art
Color measuring methods are broadly classified into two methods, i.e., a spectral colorimetry method (spectrophotometric colorimetry) and a stimulation value direct-reading method. A spectrophotometer performs color measurement using the former method. The spectrophotometer calculates tristimulus values from the spectral reflectance of an object to be measured to thereby determine the color value of various color systems standardized by CIE (International Commission on Illumination) based on these numeral values. The spectrophotometer is basically constituted by a light source that irradiates an object to be measured with light, a spectroscope that diffracts light, and a sensor that receives light. A method in which an LED (light-emitting diode) is used as the light source of the spectrophotometer is widely known. In the method, a plurality of LEDs having different spectral intensity distributions is combined with each other such that the spectral intensity distribution of the light source becomes continuous within the visible light region (see FIG. 3 disclosed in Japanese Patent Laid-Open No. 2000-292259). In the method using a plurality of LEDs, a color value to be measured may undesirably be affected by a shift of the spectral intensity distribution due to variations in the manufacture of LEDs.
In order to avoid the disadvantageous circumstance, there has been proposed a light source configuration method in which a color value to be measured is hardly affected by a shift of the spectral intensity distribution of an LED (see FIG. 10 and FIG. 11 disclosed in Japanese Patent Laid-Open No. 2004-101358). The method enables measurement with high accuracy by giving consideration to the color-matching function or the magnitude of the change in the spectral reflectance of an object to be measured upon selection of the spectral intensity distribution of an LED used for a light source.
However, although the method can improve measurement accuracy in a single spectrophotometer, the method does not consider an instrumental error which is a difference in the color value between a plurality of spectrophotometers, resulting in occurrence of variations in measured values for each device.


A work apparatus and a production line that effectively moves a work apparatus at a production line while reducing setup costs. A work apparatus of the production line includes an exchanging device configured to perform collecting and supplying of an exchange element set on each of the multiple electronic component mounters; a first rail provided on a front section of the multiple electronic component mounters, extending in the conveyance direction of the circuit board, and including a planar traveling path; and a moving device configured to move the exchanging device along the first rail by driving a driving wheel configured to engage with the traveling path of the first rail via friction.

A work apparatus, in a production line configured from multiple electronic component mounters lined up in a conveyance direction of a circuit board, performs specified work with respect to each of the multiple electronic component mounters. For example, disclosed in patent literature 1 is a replenishment device that automatically supplies and collects feeders to and from electronic component mounters as an example of the above specified work. The device of patent literature 1 is configured to move the above replenishment device to a specified position using a rack and pinion mechanism.


A system for arranging image data in a file which is capable of quickly taking out only a part of an image recorded in the file from a reduced amount of image data. The filing system has an image signal input unit for receiving an image signal representative of a frame of image, a block receiving identification generating unit for dividing a field of image area formed by the image signal into blocks and for generating identifications each assigned to associated one of those blocks, and a storage unit having a first area adapted to store image signals of the blocks. The storage unit has a second area adapted to store an identification of desired one of the blocks.

1. Field of the Invention
The present invention relates to a data filing system, and more particularly to a system for storing, retrieving and reproducing image data.
2. Description of the Background Art
In the case of photographs for use in engineering, such as images of a waveform displayed on the screen of an oscilloscope, an area of interest to be observed by an engineer is not always the whole area but often part of the screen. This is also the case with images recorded by measuring instruments, such as a spectrum analyzer, and further with an image data file in which images are recorded and analyzed in the form of digital data. Specifically, even when it is sufficient that only a part of interest of an image is reproduced, the entire area of the image frame is read out from the image data file. Also in the case of a composite picture or montage photograph, a photographic certificate or the like, what is actually required may frequently be only a portion of the area of an image frame, for example, a face portion of a person. Even in such a case, the data of the entire area of the image is read out and then an area of interest of the entire image is enlarged and taken out from the data.
Image data itself in principle has a high level of redundancy. Consequently, an image data file in which images are recorded on a digital data basis is large in size , since it involves a large amount of data. Thus, according to a system which requires the whole picture area of an image to be read out even where it is sufficient to retrieve data of only a portion of interest of the recorded image, it takes a lot of time for reproducing and retrieval. Specifically, a memory device which is slow in retrieval and transfer rate takes a remarkably long time for retrieval. With respect to the compsite photograph and the photographic certificate, there is adopted, to take out a part of interest of an image, a system which performs clipping such that data of the entire area of an image is read out and then a portion of interest of the image, such as of the face portion of a person, is enlarged. Thus, this also involves such a drawback that it takes a lot of time for retrieval.
Further, hitherto, in the case where still images such as still pictures or photographs are managed, for example, at home or the like, photographs each having a predetermined size are stored in a book-style album in such a manner that a plurality of pictures are sequentially pasted on pages of the album. In this case, it is possible to watch a plurality of images and also to easily locate a desired image by turning over sequentially the pages of the album. Further, it is possible to sort the related images on an album-by-album basis and also to easily locate an album including a desired image with associated indexes appended to the respective albums. However, the increased number of pictures involves an increased number of album volumes. Specifically, the increased number of album volumes, such as 10, 20 volumes, will cause such problems that a large space for storage is needed and the management is not easy. Further, safekeeping of those albums for years will bring about discoloration of the pictures, and will involve such a problem that pictures may inadvertently be broken when the pictures are repasted for rearrangement.
In view of the foregoing, recently, there has been developed an image recording system in which a still image such as a still picture is read by an image reader such as an image scanner and is converted into digital data, the data are each generated in the form of a data file which is able to be displayed on a display unit, and the data files are recorded on a large capacity optical disc such as a compact disc (CD). In this case, for example, an image file of the image data thus read is recorded on an optical recording medium together with data of key words, such as a file name, a photographer, a photographing date and the title of the image. Thus, when reproducing a desired image, entry of the key words such as a file name, a title or the like permits the image file of interest to be retrieved. When the entered key words, such as a photographer and a photographic date, are directed to a plurality of image files, these key words are first entered to retrieve an associated plurality of image files, and then an additional key word different from the earlier entered key word is entered to narrow the objects to be hit. This work is repeatedly carried out to locate the image of interest.
Further, for example, in Japanese Patent Laid-Open Publication No. 181905/1993, there is proposed a retrieval information display system in which pictures photographed by a digital still camera or the like are recorded in a memory card, from which a desired photographic picture is retrieved. That system is provided with a multi-screen, which includes a plurality of sections of a full screen corresponding to a plurality of pictures, to display a plurality of small pictures on the respective screen sections, on one of which displayed is single, representative one of the small pictures corresponding to the pictures consecutively captured, or related to each other, thereby facilitating retrieval.
The conventional system as described above, however, suffers from the following drawbacks.
Storage of a number of picture files, for example, near 1000 sheets, in a sheet of optical disc will make it difficult to readily manage the picture files as in the case of photographic albums. Specifically, where a desired picture is retrieved through key words and the like, for example, if a single key word is involved in a number of picture files, it is necessary for an operator to remember a number of key words mutually different and input them a number of times until a desired picture file is reached. In this case, if the operator forgets any of the key words, it would be impossible to perform the retrieval. On the other hand, it could be considered that a desired picture file is retrieved by such small screen sections only. In this case, however, it would cost much time and labor to locate a desired picture through scrolling the screen sections for several hundered sheets of the picture file.
Further, in the case of generating small pictures, the small pictures are formed with a desired size by thinning inputted pictures. However, if the size of the inputted pictures is not uniform, the size of the generated small pictures will not be unified. This involves such a problem that when those generated small pictures are displayed altogether on a display unit there occurs a difficulty in arranging them on the area of the picture screen. Furthermore, when a file for storing small picture data is formed, even though the respective storage capacities allotted to sheets of small picture data are small, a file for storing, for example, 1000 sheets of small picture data will require several tens of megabytes in capacity. This may cause difficulties such as frequent failures in recording to a recording medium, thereby giving rise to a difficulty in handling the files.

Image data filing system for quickly retrieving an area of interest of an image from a reduced amount of image data


The present disclosure relates to systems and methods for determining an estimated time of arrival (ETA) for a route, based on a model of ETA. The systems may perform the methods to obtain a first electrical signal associated with at least one route having at least one road section; generate and save first structured data of at least one global feature vector and at least one historical duration associated with the at least one route based on the first electrical signal; generate second structured data of a model of ETA by training the model based on the at least one global feature vector and the at least one historical duration; and save the second structured data of the model of ETA in the at least one non-transitory computer-readable storage medium.

With the development of Internet technology, on-demand services, such as online taxi hailing services and delivery services, play a significant role in people's daily life. For example, on-demand transportation service for a transportation may heavily be used by a user (e.g., a passenger). Through an online on-demand service platform, the user may request an on-demand service in the form of an on-demand service through an application installed in a user equipment, such as a smartphone terminal.

This patent is subject to a terminal disclaimer.

Systems and methods for recommending an estimated time of arrival

BEIJING DIDI INFINITY TECHNOLOGY AND DEVELOPMENT CO., LTD.


A double-layered and bi-directional rotary decoration including a base seat assembly, a driving mechanism, a lower rotary mechanism and an upper rotary mechanism. When a driving motor of the driving mechanism drives a first gear to rotate, a second and a third gears are rotated in a reverse direction and a fourth gear is rotated in the same direction as the first gear so that the lower rotary mechanism disposed with first decorative articles and the upper rotary mechanism disposed with second decorative articles are rotated in reverse directions to achieve a double-layered and bi-directional live visual effect.

The present invention relates to a double-layered and bi-directional rotary decoration in which a lower rotary mechanism disposed with first decorative articles and an upper rotary mechanism disposed with second decorative articles are rotated in reverse directions.
FIG. 1 shows a conventional rotary decoration including a base seat 11, a central rotary disc 12, multiple vertical rods 13 disposed on the central rotary disc 12 and multiple animal decorative articles 14 disposed on the vertical rods 13. When the central rotary disc 12 is rotated, all these decorative articles 14 will be rotated only in one direction. This can only provide monotonous visual effect.

Double-layered and bi-directional rotary decoration


A projection lens assembly is provided. The projection lens assembly includes, sequentially along an optical axis from a source-side to an image side, a first lens having a positive refractive power; a second lens having a negative refractive power, where a source-side surface and an image-side surface of the second lens are concave surfaces; a third lens having a positive refractive power or a negative refractive power; and a fourth lens having a positive refractive power, where an image-side surface of the fourth lens is a convex surface. A total effective focal length f of the projection lens assembly and an effective focal length f1 of the first lens satisfy: 2.0<f/f1<3.5.

In recent years, with the continuous improvement of the science and technology and the stepwise rise of interactive devices, the application range of projection lens assembly has become more and more wide. Nowadays, due to the quick development of the chip technology and the quick development of the intelligent algorithm, a three-dimensional image having the position depth information of an object may be calculated by using an optical projection lens assembly to project an image to a space object and receive a signal of the image. Specifically, the three-dimensional image containing the position depth information of the projected object may be calculated by: projecting light emitted by an infrared laser diode (LD) or a vertical-cavity surface-emitting laser (VCSEL) to a target object using the optical projection lens assembly; re-distributing a projected image on the target object by making a projecting beam pass through a defractive optical element (DOE); and receiving the image projected onto the object using a camera lens assembly. Further, the three-dimensional image having the depth information may be used in the development of various deep applications such as the biometric identification.
In general, in the conventional projection lens assembly, various aberrations are eliminated and resolution is enhanced by increasing the number of lenses. However, the increase of the number of the lenses may cause the increase of the total track length of the projection lens assembly, which is not conductive to the miniaturization of the lens assembly. In addition, the general projection lens assembly having a large field-of-view also has many problems such as large amount of distortion and poor imaging quality, and cannot match the defractive optical element (DOE) to accurately realize the redistribution of the projected beam on the target object.


A chain tension control apparatus for preventing a chain chattering in a power transmission system including main and subordinate sprockets and a chain connecting the main and subordinates sprockets. The apparatus maintains a chain tension by sensing a chain release and accordingly driving an electromagnet in accordance with a compensation signal that responds to chain release factors, and the chain tension in the apparatus is maintained by disposing a permanent magnet adjacent to the chain, thereby preventing chain vibration and noise from occurring.

1. Field of the Invention
The present invention relates to a chain-drive power transmission apparatus, and more particularly to an improved chain tension control apparatus for preventing chain chattering in a chain-drive power transmission system, which is capable of preventing a chain from generating a vibration noise by appropriately maintaining a chain tension thereof.
2. Description of the Background Art
In general, a chain-drive power transmission system employing a pair of sprockets driven by a chain which is engaged thereonto is widely applied to a variety of industrial appliances, such as transportation vehicles.
Conventionally, as shown in FIG. 1, a chain-drive power transmission apparatus includes main and free wheeled subordinate sprockets 1a, 1b, and a chain 2 engaged onto the main and free wheeled subordinate sprockets 1a, 1b for power transmission. Here, reference numeral 3 denotes chain rollers.
The chain 2 is formed by serially engaging a plurality of steel link plates into one another, and it is generally classified into a roller chain and a silent chain.
The silent chain is adopted to obtain a smooth and silent operation but is complicated in structure, so that it is only employed in limited fields due to its high production cost. Consequently, the roller chain is broadly employed.
However, although it is an advantage in that a larger amount of power may be transmitted at a constant rate, the conventional power transmission apparatus using a roller chain tends to generate vibration or noise due to its structural disadvantages.
Such vibration and noise are generated as a result of metal-to-metal friction. In particular, external and internal factors may produce errors in straightness, alignment and pitch with regard to the sprockets 1a, 1b. Further, a long-term operation and subsequent wear of the sprockets 1a, 1b may cause a connection problem between the sprockets 1a, 1b and the chain 2, thereby increasing the noise.
For instance, as shown in FIG. 2, a chain roller 3 during the operation of chain 2 tends to incline towards a side wall "B" rather than towards a bottom center "A" of a U-shaped groove 4 that receives and passes the roller 3, thereby producing a further noise.
Moreover, a main reason for the noise generation in the chain-drive power transmission apparatus is attributable to a decreased tension in the chain 2. That is, when the chain 2 is loosened by the decreased tension therein, an impact between the respective sprockets 1a, 1b and the chain 2 causes a serious chain chattering noise which results from the chain 2 vibration.
Here, a variety of methods are being considered in order to restrain noise generation. As an example, a buffer is supplied in the U-shaped groove 4 in order to decrease the noise that may be caused by friction between the chain rollers 3 and the main and free wheeled subordinate sprockets 1a, 1b. As another example, a chain guide shoe is fixedly provided between the main and free wheeled subordinate sprockets 1a, 1b and the chain 2, for thereby decreasing vibration noise that may be caused by decreased tension of the chain 2.
However, the buffer installation in the U-shaped grooves 4 of the main and free wheeled subordinate sprockets 1a, 1b is complicated, and easily generates an abrasion thereof. Also, the chain guide shoe installation leads to an impact noise between the chain guide shoe and the chain 2.


A method of manufacturing a nonvolatile semiconductor memory including forming a first insulating film, a first semiconductor film for forming floating gates, a second insulating film, and a second semiconductor film for forming control gates in that order on a semiconductor substrate, and forming etching masks, each having a configuration corresponding to that of the floating gate, at every other one of areas on the second semiconductor film where the floating gates are to be formed. Side wall spacers are formed on both side walls of each of the etching masks and a third semiconductor film, formed of the same material as that of the second semiconductor film is selectively grown on parts of the second semiconductor film which are not covered by any of the etching masks and the side wall spacers. Then the side wall spacers are removed and the second semiconductor film under the side wall spacers, the second insulating film and the first semiconductor film, together with the third semiconductor film in a direction substantially perpendicular to a surface of the semiconductor substrate by using the etching masks.

1. Field of the Invention
The present invention relates to a method of manufacturing a nonvolatile semiconductor memory and more particularly to a method of manufacturing a floating-gate nonvolatile semiconductor memory having a reduced gate space.
2. Description of the Related Art
EEPROM is a nonvolatile read only semiconductor memory in which information can be electrically written or erased. Thus, EEPROM is widely used for a microcomputer. A memory cell employing EEPROM is, for example, disclosed in an article "Reviews and Prospects of Non-Volatile Semiconductor Memories", IEICE TRANSACTIONS VOL. E 74, NO. 4, April 1991, pp. 868-874.
In the EEPROM, it is prevailed to write or erase information by injecting or discharging electrons into or from a floating gate through a thin oxide film formed on a drain region of a memory transistor by the tunnel current of Fowler-Nordheim.
For the purpose of improving the integration density in such a floating-gate EEPROM, the reduction of both the length of each floating gate and the space between every two floating gates has been developed. For this purpose, in the photolithography process for forming the floating gate, the exposure is performed by a reduced projection aligner.
However, even when the exposure is performed by the reduced projection aligner, there is a limit in reduction of both the length of each floating gate and the space between every two floating gates due to the resolution of the reduced projection aligner. For example, in the case of the aligner employing an i ray with 365 nm wavelength, the minimum dimension is limited to 0.5 .mu.m. Therefore, there is also a limit in integration of EEPROM.
As for a method of manufacturing EEPROM wherein the space between the floating gates is reduced to less than the minimum dimension which is determined by the resolution of the reduced projection aligner, there is known a method disclosed in an article "A 2.3 .mu.m.sup.2 Memory Cell Structure For 16 Mb NAND EEPROMs", IEDM 90 pp. 103-106 for example. In this method, however, it is necessary to form etching masks such that each etching mask has a configuration corresponding to the gate configuration and the etching masks are disposed at positions where the gates are to be formed with a space between two adjacent etching masks near the limit of the resolution of the reduced projection aligner, and to form a photo resist film of narrow width within the space so as not to contact with the etching masks adjacent thereto. Therefore, it involves a problem that it is practically difficult to perform the positioning of the photo resist film.

Method of manufacturing a nonvolatile semiconductor memory


A user's location may be estimated by applying a probability function to raw user location data taken from various telephony or wireless systems. The probability function may estimate a user's location based on a training dataset that may be generated a priori to the analysis. A training dataset may be generated or updated by analyzing queries made with global positioning system (GPS) data to extract a device's GPS location. The probability function may be generated in part from physical maps. The estimated location may improve location accuracy, especially when attempting to map a user's location with accuracies that may be much smaller than a cell of a cellular telephony system.

Telecommunications systems, most notably cellular telephony systems, may have connection data from which user's locations may be determined. The naïve method for determining a user's location may be to determine which cell the user is operating, and assign the user's location to be within the cell. Some telephony data sets may include triangulated location data, which may be derived from analyzing signals from two, three, or more cell towers to determine a location.
Such approaches operate well when an area of interest is approximately the size of a cell or larger than a cell. However, when an area of interest may be smaller than a cell or when an area of interest may include only portions of several cell boundaries, the accuracy of such an approach becomes very poor. Even with triangulated location data, the accuracies of the location data may be widely variable.

Estimated user location from cellular telephony data


According to one embodiment of the present invention, a fly height of a read/write head in a disc drive is actively controlled as the read/write head is positioned over a rotating disc with a patterned media. The patterned media includes ridges and grooves in servo wedges in the patterned media. According to another embodiment of the present invention, an estimated fly height of the read/write head is compared with a desired fly height to generate a control signal. The control signal is used to apply a voltage difference across a piezoelectric layer joining the read/write head to a slider to move the read/write head relative to the slider and adjust the fly height of the read/write head. According to another embodiment of the present invention, a map of ridges and grooves in the patterned media is generated and the fly height of the read/write head is actively controlled based on information in the map.

The present invention relates to the field of disc drive data storage devices. More particularly, this invention relates to fly height control for a read/write head over patterned media.
An important device in any computer system is a data storage device. Computer systems have many different places where data can be stored. One place for storing massive amounts of data and instructions is a disc drive. The disc drive has one or more discs, each with two surfaces on which data is stored. The surfaces are coated with a ferro-magnetic medium with regions that are magnetized in alternate directions to store the data and instructions. The coated surfaces are computer-readable media holding computer-readable data and computer-readable and computer-executable instructions. The discs are mounted on a hub of a spindle motor for rotation at an approximately constant high speed during the operation of the disc drive. An actuator assembly in the disc drive moves magnetic transducers, also called read/write heads, to various locations relative to the discs while the discs are rotating, and electrical circuitry is used to write data to and read data from the media through the read/write heads. Data and instructions are stored in the media of one or both of the surfaces of each disc. The disc drive also includes circuitry for encoding data and instructions written to the media and for decoding data and instructions read from the media. A microprocessor controls most operations of the disc drive, such as transmitting information including instructions or data read from the media back to a requesting computer and receiving data or information from the requesting computer for writing to the media.
Information representative of data or instructions is stored in tracks in the media. In some disc drives, information is stored in a multiplicity of concentric circular tracks in the media on each disc. In other disc drives, information is stored in a single track that forms a continuous spiral in the media on each disc. A read/write head is positioned over a track to write information to or read information from the track. Once the operation is complete, the read/write head may be controlled to move to a new, target track, to write information to or read information from the target track. The movement takes place in the following modes. The read/write head is moved along an arc across the media of a disc in a seek mode to position it near the target track. The read/write head is then positioned over the target track during a track-and-follow mode, also called a tracking mode, to read or write the information stored in the target track. Servo information is read from the target track by the read/write head, and a feedback control system determines a position error signal from the servo information. If the read/write head is not in a correct position, it is moved to a desired position over the target track in response to the position error signal.
Each read/write head is typically located on a slider that is supported by the actuator assembly. The actuator assembly is controlled to position the read/write head over the media of one of the discs. Each slider is attached to a load spring supported by an arm. The arms in the actuator assembly are rotatably mounted to an actuator shaft through bearings and are rotated about the actuator shaft by a voice coil motor to move the read/write heads over the media. The bearings and the actuator shaft are also called a pivot. The voice coil motor includes a voice coil mounted to the actuator assembly opposite to the arms. The voice coil is immersed in a magnetic field of an array of permanent magnets placed adjacent to the actuator assembly. The feedback control system applies current to the voice coil in a first direction to generate an electromagnetic field that interacts with the magnetic field of the magnets. The interaction of the magnetic fields applies a torque to the voice coil to rotate the actuator assembly about the pivot, and the actuator assembly is accelerated to move the read/write head to a new position. The feedback control system may then apply current to the voice coil in a direction opposite to the first direction to apply an opposite torque on the actuator assembly. The opposite torque may be used to decelerate the actuator assembly and position the read/write head over a target track. The opposite torque may also be used to accelerate the actuator assembly to a different position.
Each slider is a small ceramic block that flies over the media of one of the discs. When the disc rotates, air flow is induced between the slider and the media, causing air pressure which lifts the slider away from the media. The slider has an air bearing surface that is aerodynamically shaped to give the slider lift when air flows between the slider and the media. The load spring, described above, produces a force on the slider directed toward the media. The forces on the slider equilibrate such that the slider flies over the media at a nominal fly height. The fly height, also called clearance, is a distance between the slider and the media, and is a measure of an amount of air available to interact with the air bearing surface of the slider as it is aerodynamically supported over the media. The fly height of the slider affects the fly height of the read/write head carried by the slider, which is a distance between the media and the read/write head. The fly height of the read/write head should be approximately uniform so that the read/write head is capable of reading data from, and writing data to, the media.
Several variables affect the fly height of a slider. For example, fly height is impacted by a curvature of a disc, vibrations of the disc caused by the spindle motor, and roughness and defects in the media. Fly height is also affected by a variation in the aerodynamics of the slider due to changes in its orientation and position during flight.
The media may be patterned, and this also affects the fly height of a slider and the fly height of a read/write head. In conventional discs servo information is written as signals or bursts in servo wedges across the media. The bursts are used to determine a position of a read/write head relative to a track in the media. The bursts occupy a substantial amount of the surface of the media, and require a substantial amount of time and equipment to be written into the media. The bursts are being replaced by patterns in the media that represent servo information. The patterns are grooves and ridges formed in the servo wedges of the media of a disc. The grooves and ridges are formed during the manufacture of the disc, and occupy less area on the media than the bursts do. As a result, a greater area of the media may be used to store data or instructions.
Disc drives are being produced with increasing track densities and decreasing access times. A read/write head must fly over the media of a disc as closely as possible to read data and instructions from or write data and instructions to tracks that are closely spaced in the media. The patterns in the media abruptly change the fly height of a slider as it flies over one of the servo wedges, and therefore disturb the fly height of the read/write head in the slider. The disturbance increases the possibility of an error in reading from or writing to the media.
Several efforts have been made to improve the control the fly height of a read/write head. The load spring which forces the slider toward the media has been designed to influence fly height, and the shape of the slider has been altered in an attempt to improve its aerodynamics. However, none of the efforts have resulted in a suitable solution to the problems mentioned above. There remains a need for a system to control the fly height of a read/write head to allow it to read data from or write data to closely spaced tracks in a patterned media.
According to one embodiment of the present invention, a fly height of a read/write head in a disc drive is actively controlled as the read/write head is positioned over a rotating disc with a patterned media. The patterned media includes ridges and grooves in servo wedges in the patterned media. According to another embodiment of the present invention, an estimated fly height of the read/write head is compared with a desired fly height to generate a control signal. The control signal is used to apply a voltage difference across a piezoelectric layer joining the read/write head to a slider to move the read/write head relative to the slider and adjust the fly height of the read/write head. According to another embodiment of the present invention, a map of ridges and grooves in the patterned media is generated and the fly height of the read/write head is actively controlled based on information in the map.
Advantageously, the embodiments of the present invention provide for an active control of the fly height of a read/write head over patterned media to allow it to read data from or write data to closely spaced tracks. The active fly height control provides improved response to abrupt changes in the air flow boundary condition of an air bearing surface of a slider carrying the read/write head by moving the read/write head relative to the slider. The read/write head has a low mass relative to the slider and therefore a high resonant frequency which allows for a quick compensation of its fly height in response to the patterned media. The fly capability of the slider is maintained by allowing its fly height to change while moving the read/write head relative to the slider to maintain its capability to generate a useful read/write signal. The embodiments of the present invention help to preserve the sensitivity of the read/write head, and substantially reduces unwanted contact between the read/write head and the patterned media.

Fly height control for a read/write head over patterned media


A procedure to recognize a depressurized fuel system of a motor vehicle with an internal combustion engine that includes a parameter characterizing the fuel system temperature is acquired when turning off the internal combustion engine; a parameter characterizing the fuel system temperature is acquired in the immediately subsequent driving cycle when starting the internal combustion engine; and from the difference between the shut-down temperature and the starting temperature, the pressure in the fuel system is inferred.

In present day high pressure fuel systems for gasoline engines, system pressures up to 200 bar are necessary. The fuel high pressure is closed-loop controlled as a function of the operating conditions of the internal combustion engine. When the internal combustion engine is turned off, the pressure existing in the high pressure fuel system is not actively reduced, but is initially maintained in the fuel system. After turning the engine off, a so-called post heating phase results, in which the temperature of the engine and thereby also the temperature of the fuel system and of the fuel rises up to a maximum amount. By means of a heat expansion of the fuel, the pressure rises in the fuel system. After that, the internal combustion engine, the fuel system and the fuel cool down. If this phase is sufficiently long, the entire vehicle cools down to the ambient air temperature. As a result of the cooling down, the fuel contracts, whereby the fuel pressure sinks in the fuel system.
Fuel pressure diagnosis procedures are now, for example, known from the field of the invention, during which the pressure sensor initially is checked for its electrical operating capability and consequently a test takes place to see if the sensor can acquire the desired range (so-called "Range Check"). The test for electrical operating capability results, for example, by acquisition of the fuel pressure sensor voltage. In so doing, it can be ascertained, if a drop in load, a short circuit of the battery voltage or a short circuit of the battery ground exists. In the so-called "Range Check", a test is made, if the indicated fuel pressure value lies within a plausible specified value range.
In addition procedures exist to test the fuel pressure sensor with the aid of the lambda-closed-loop control of the engine and to determine its operational capability. If the fuel pressure in the rail does not correspond to the fuel pressure indicated by the sensor, the amount of fuel injected is no longer correct and the lambda-closed-loop control has to conduct a correction of the amount of fuel injected. Using the lambda-controller intervention, it can not only be recognized, if the fuel pressure sensor is in good working order but rather an offset of the fuel pressure sensor can be determined, and in this way the sensor value can be adjusted. It is now, however, problematic that with such a diagnosis for an offset of the fuel pressure sensor to be reliably recognized, because, for example, error/tolerances in the air system also lead to an intervention of the lambda-closed-loop control.
The task of the invention is to impart a procedure to recognize a depressurized fuel system of a motor vehicle. Additionally a procedure shall be created, with which the operational capability of the fuel pressure sensor and especially its possibly ensuing offsets can be determined.

Procedure to recognize a depressurized fuel system


A secondary ion mass spectrometer comprising a primary ion beam device, and means for collecting, mass filtering and subsequently detecting secondary ions released from a sample due to the sample having been impacted by a plurality of primary ion beams. The secondary ion mass spectrometer is remarkable in that it uses a plurality of primary ion beams in parallel for scanning the surface of the sample.

It is known to use Secondary Ion Mass Spectrometry, SIMS, devices for analytical and imaging purposes. SIMS represents a widely used and extremely powerful technique for performing chemical analysis and imaging of samples. Imaging SIMS has become an indispensable analytical tool in many fields, including but not limited to material sciences, biology, cosmo-chemistry, and geosciences.
In known SIMS devices, a single focused primary ion beam is used to illuminate the surface of a sample. Thereby, material is sputtered from the sample, which creates localised secondary ion emissions stemming from the sample. These secondary ions can be analysed by different kinds of spectrometers. Generally, the secondary ions are first filtered in accordance with their mass-to-charge ratio, and then detected, classified or imaged accordingly.
The current state-of-the-art in high resolution imaging SIMS, is the Cameca™ NanoSIMS 50, with high spatial resolution performance down to 50 nm. Another SIMS technique, known as Time of Flight SIMS, TOF-SIMS, that can achieve a lateral resolution also down to 50 nm for some specific primary ion species. In both of these known systems, the main drawback is that high resolution imaging requires very small size ion probes, which usually means very low primary ion currents, in the order of pico-amperes or less and the area of analysis is generally limited to small fields of view, FOV. For example, the maximum FOV of the NanoSIMS is 80×80 μm2. The small primary ion current that is employed leads to long acquisition times and small FOVs require many images to be stitched together to form a mosaic image of the sample surface leading to stitching errors and intensity variations form image to image. These issues make the NanoSIMS (or TOF-SIMS) unsuitable for high-resolution large area imaging or 3D reconstruction. One application for which large area imaging is of particular interest is the mapping of biological systems, e.g. entire rat brains. A typical area of interest on such a brain section would have a size of e.g. 1 mm2. To be imaged with high resolution imaging techniques, the tissue should be scanned with 400 tiles of 50×50 μm2. If each tile consists of 512×512 pixels, equivalent to 100 nm probe size (not the smallest probe), and with a dwell time per pixel of 5 ms/pixel, each tile image will take 21.8 min, then the scanning time of the complete tissue will take 145 hrs (6 days), only for one complete surface image. One has to note that the instrument would not remain stable in terms of primary ion current etc. over such a long period. For a 3D reconstruction the acquisition of several layers of the sample (scans), with a minimum of 10 layers, the total acquisition time will be equivalent to 60 days of continuous operation. The only known way to reduce the analysis time has so far been through the development of high brightness ion sources in order to increase the primary ion currents and by keeping a small probe size. In conclusion, a device that can perform high resolution imaging SIMS for larger areas or 3D imaging, in an acceptable time, i.e. yielding high throughput, is currently missing.

Multiple beam secondary ion mass spectrometry device

LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)


The system provides a method and apparatus for constructing, and for dynamically rearranging the order of content in a composite video. The re-ordering of clips in the composite video can be based on one or more weighting factors associated with each clip. These factors can include freshness or newness of the clip, popularity based on the number of “likes” of a clip by others, the content of the clip (e.g. celebrity creator or presence), paid boosting (e.g. for commercial concerns); and other factors. Each clip has associated metadata that can be used to assign a weight value to the clip for purposes of reordering the composite video.

The ability to create video has become widespread due to the presence of cameras in many common devices (computers, cell phones, smart phones, tablet computers, lap tops, PDA's and the like). Users often want to combine their own video clips, and/or the clips of others, into composite videos. However, to date there has not been a convenient method of easily combining and rearranging video content from multiple sources into a composite video.

Method and apparatus for dynamic presentation of composite media


A lens driving device includes a lens holder that holds a lens, a driving portion that drives the lens holder through a magnetic force produced using a coil and a magnet, and a guide shaft that supports the lens holder movably. When moving the lens holder to a target position, an AC voltage is applied to the coil over a specific interval from a beginning of movement of the lens holder. Further, an amplitude of the AC voltage is reduced stepwise with the passage of time.

Conventionally, lens driving devices for driving lenses have been provided in optical devices. For example, optical pickups may be provided with lens driving devices for driving a movable lens, such as a collimating lens, along the direction of the optical axis for the purpose of suppressing the effect of spherical aberration. Such a lens driving device is structured through the provision of, for example, a lens holder for holding the lens, a driving portion for applying a driving force to the lens holder, and a guide shaft for guiding the lens holder so as to move in the target direction. The driving portion may use a motor of a rotating type, such as a stepping motor, or may use a linear motor mechanism.
Patent Citation 1, for example, discloses a lens driving device that uses a linear motor mechanism. This Patent Citation 1 discloses the superimposition of an AC voltage on a DC voltage and the application of the voltage to a coil, when driving a lens holder, for the purpose of reducing the frictional force between the lens holder (a movable portion) and the guide shaft.


A water engine having a rocking beam that includes a bucket. A reservoir is mounted on each end of the beam. The respective reservoirs are provided with a valved discharged opening which are alternatively actuated as the corresponding bucket is moved to its elevated position. The actuating medium is supplied to each of the reservoirs by a pump. The timing of the opening and closing of the respective reservoir and bucket discharge valves in an alternating sequence are effected by a mechanical linkage arrangement that is rendered responsive to the rocking motion of the beam. The alternating filling and emptying of the respective bucket imparts a continuous oscillating or rocking motion to the rocking beam, whereby a transmission translates the oscillating motion of the beam into rotary motion for driving a suitable work producing machine.

Heretofore, numerous efforts have been made to harness water to generate energy to produce useful work. U.S. Pat. No. 4,295,800 discloses a device for converting energy generated by waves to drive a work producing device. U.S. Pat. No. 4,420,373 is directed to a method and apparatus for the conversion of dissipated heat energy contained in natural or artificial bodies of water near ambient temperature to an industrial process heat, mainly in the form of steam. U.S. Pat. No. 4,465,941 is directed to a water engine for extracting energy from a head of water and having particular application as a tidal barrage or a river barrage. U.S. Pat. No. 4,691,514 is directed to a water engine of the type having float reciprocating vertically within a chamber which is alternately filled and emptied with water. U.S. Pat. No. 4,739,182 is directed to a water power engine which utilizes the energy of a slowly moving large body of water to produce useful work. It appears that there has been a constant challenge to harness the potential and kinetic energy inherent in a body of water to produce useful work in a simple and economical manner.


A control gate formed on top of an insulation layer over a floating gate for a transistor element of a memory cell in a redundancy ROM is shaped in a form covering not only the top but also the sides of the floating gate. A drain electrode wiring conventionally connected through a well is directly connected to a drain diffusion area. This enables the redundancy ROM to be miniaturized and the voltage fall at the edge of a drain diffusion area to be reduced.

1. Field of the Invention
This invention pertains to a semiconductor memory such as an EPROM (Erasable and Programmable Read Only Memory), and more particularly to improvement and compaction of a memory cell transistor of a ROM (Read Only Memory) for a non-volatile data storage provided in such a semiconductor memory.
2. Description of the Related Arts
EPROMs are widely known as typical non-volatile semiconductor memory devices.
Because EPROMs can hold stored data semipermanently as well as erase and overwrite them, they are used widely e.g. for firmware of systems having a lot of anticipated changes, systems on which programs are built upon by taking the compatibility with other systems into consideration, and systems in which many changes occur in the program specification.
A memory cell of an EPROM comprises a single transistor called a memory cell transistor.
FIGS. 1A, 1B and 1C are the top view and cutaways of an exemplary memory cell transistor of a conventional EPROM in a memory cell transistor.
More specifically, FIG. 1A shows a top view of a conventional memory cell transistor of an EPROM cell, FIG. 1B shows the A--A' cutaway of the memory cell transistor shown in FIG. 1A, and FIG. 1C shows the B--B' cutaway of the same.
As shown in FIG. 1B, a memory cell transistor comprises an N.sup.+ type source diffusion area 5 and an N.sup.+ type drain diffusion area 4 on the surface of a P type Si (silicon) substrate 1. On top of its channel formed between the N.sup.+ type source diffusion area 5 and the N.sup.+ type drain diffusion area 4, it has a layered structure comprising an insulation film 6, a floating gate 2 made of polysilicon, another insulation film 6 and a control gate 3. Therefore, the capacitance of the floating gate 2 and that of the control gate 3 are coupled through such an insulation film 6.
As such, a memory cell transistor of an EPROM has a structure in which a floating gate is attached under a gate of an N-channel MOS transistor (corresponding to the control gate3).
An ultraviolet ray radiation energizes electrons stored in the floating gate 2 of a memory cell transistor having the above structure, which causes the electron to be emitted out of the floating gate 2. As a result, the electrons of the floating gate 2 become void and data are erased.
In this state, a simultaneous application of a high voltage to the control gate 3 and the N.sup.+ type drain diffusion area 4 causes an avalanche breakdown phenomenon near the N.sup.+ type drain diffusion area 4 of the channel. The floating gate 2 captures some of the hot electrons charged with high energy near the N.sup.+ type drain diffusion area 4.
The electrons consequentially stored in the floating gate 2 raise the threshold voltage of the memory cell transistor controlled by the control gate 3. This prevents the memory cell transistor from becoming conductive despite an application of a proper readout voltage, such as five volts [5V], to the control gate 3, thereby preventing a datum from being written in erroneously.
Meanwhile, since the floating gate 2 does not store electrons when data have been erased, an application of the proper readout voltage, such as five volts [5V], to the control gate 3 causes the memory cell transistor to become conductive. A further application of another predetermined voltage, such as one volt [1V], to the N.sup.+ type drain diffusion area 4 causes the readout current to flow in the memory cell transistor.
Thus, the correspondence between the ON (conductance) and OFF (non-conductance) states of the memory cell transistor and the binary data comprising zero [0] and one [1] enables the memory cell transistor to store the binary data.
FIGS. 2A, 2B and 2C are a block diagram and circuit diagrams of an EPROM with a redundancy ROM.
FIG. 2A schematically shows an example of the entire configuration of a conventional semiconductor memory device.
An actual EPROM arrays a plurality of memory cell transistors, such as ones shown in FIG. 1, in a matrix form.
In FIG. 2A, a memory cell array 11 comprises a predetermined number of memory cell transistors T.sub.00, T.sub.01, . . . ; T.sub.10, T.sub.11, . . . ; and T.sub.n0, T.sub.n1, . . . , among which memory cell transistors T.sub.n0, T.sub.n1, . . . form redundant circuits.
A row address buffer 12 outputs to a row decoder 13 internal row address signals A0, A0, A1, A1, . . . , and Am, Am by reshaping the waveform of and inverting the inputted row address signals A0 through Am.
The row decoder 13 selects an appropriate word line, e.g. WL.sub.0, determined by the above internal row address signals upon their receipt. It sets the voltage of the selected word line, which is WL.sub.0, to a high level and sets those of all other unselected word lines, which are designated as WL.sub.1 through WL.sub.n, to a low level, for example.
Among the above described (n+1) word lines WL.sub.0, WL.sub.1, . . . , and WL.sub.n, word line WL.sub.n is connected to the output side of a match detecting circuit 19 and is selected by an output from the match detecting circuit 19.
A write-in direct current power source V.sub.pp sets selected word lines WL.sub.0, WL.sub.1, . . . e.g. to twelve point five volts [12.5V] when data are written, while a readout direct current power source V.sub.cc sets them e.g. to five volts [5V] when data are read.
Each of the word lines WL.sub.i (i=0, 1, . . . , and n) is connected to the control gate 3 of a corresponding one of the above plurality of memory cell transistors T.sub.i0, T.sub.i1, . . .
A column address buffer 22 outputs to a column decoder 23 internal column address signals An, . . . , and Ap, Ap by reshaping the waveform of and inverting the inputted column address signals An through Ap.
The column decoder 23 selects an appropriate bit line, e.g. BL.sub.0, determined by the above internal column address signals upon their receipt. It sets the gate voltage of a transfer gate transistor, e.g. TS.sub.0, connected to the selected bit line, which is BL.sub.0, to a high level and sets that of another transfer gate transistor, e.g. TS.sub.1, connected to the other unselected bit line, which is designated as BL.sub.1, to a low level, for example.
Also, the control gate 3 of each of the memory cell transistors T.sub.00, T.sub.01, . . . ; T.sub.n0, T.sub.n1, . . . of the memory cell array 11 is connected to the corresponding one of the word lines WL.sub.0 through WL.sub.n. The floating gate 2 of each of the memory cell transistors T.sub.00, T.sub.01, . . . ; T.sub.n0, T.sub.n1, . . . of the memory cell array 11 is surrounded by the corresponding insulation film 6 shown in FIG. 2A.
When a datum "zero [0]" is written into a particular memory cell transistor T.sub.00, the column decoder 23 selects bit line BL.sub.0, the row decoder 13 selects word line WL.sub.0, and the write-in direct current power source V.sub.pp applies its high voltage, which is twelve point five volts [12.5V] in this example, to the control gate 3 of memory cell transistor T.sub.00. Also, at this time, a write-in circuit 15 energizes memory cell transistor T.sub.00 by setting the voltage on its output side to a high level (e.g. between seven volts [7V] and eight volts [8V] on receiving a write-in datum (e.g. "zero [0]") through a data input buffer 14. The floating gate 2 of memory cell transistor T.sub.00 stores hot electrons charged with high energy generated by the avalanche breakdown phenomenon near the N.sup.+ type drain diffusion area 4. Memory cell transistor T.sub.00 to which the write-in datum (e.g. "zero [0]") is thus written does not allow a current to flow, even if the readout direct current power source V.sub.cc applies the predetermined readout voltage, which is five volts [5V] in this example, to the control gate 3 through word line WL.sub.0 when its datum is read.
Consequently, memory cell transistor T.sub.00 allows its stored datum ("zero [0]" in this example) to be read by having a sense amplifier 16 and a data output buffer 17 detect its non-conductive state.
Meanwhile, when the datum "one [1]" is written in a predetermined memory cell transistor (e.g. T.sub.00), the write-in circuit 15 puts its output side in an electrically floating state. When a datum is written, memory cell transistor T.sub.00 is not energized and its floating gate 2 stores no electron.
Therefore, memory cell transistor T.sub.00 to which the datum "one [1]" is written is energized by applying the above predetermined readout voltage to its control gate 3 through word line WL.sub.0 when its datum is read. Also, at this moment, an application of a predetermined voltage (e.g. two volts [2V]) to its N.sup.+ type drain diffusion area 4 through bit line BL.sub.0 causes a predetermined readout current to flow in memory cell transistor T.sub.00. As such, the datum "one [1]" stored in memory cell transistor T.sub.00 is read out by having the sense amplifier 16 connected to bit line BL.sub.0 output a detection of a voltage fall caused by the readout current.
Also, a redundancy ROM 18 stores the address signal corresponding to the address of a bad cell in the memory cell array 11 (which is the row address of the bad cell in this case) and outputs the address signal to the match detecting circuit 19.
The match detecting circuit 19 selects word line WL.sub.n and halts the operation of the row decoder 13, when the row address buffer 12 outputs the row address signal corresponding to the address of a bad cell.
FIGS. 2B and 2C are circuit diagrams showing the exemplary internal configuration of the redundancy ROM 18.
More specifically, FIG. 2B shows the circuit configuration of a fuse ROM having a fuse 18a made of polysilicon. Ordinarily, a transistor 18c receives at its gate a gate signal Sc at a low level, remains non-conductive, and its output signal (ROM signal) from OUT on the output side is at a high level, i.e. a datum being "one [1]". When the gate signal Sc is at a high level, (i.e. when a severance signal is supplied,) transistor 18c is energized and the fuse 18a is dissolved by heat. Then, a pull-down resistor 18b causes the output signal from OUT on the output side to be at a low level, i.e. a datum being "zero [0]". By providing fuse ROMs having such a circuit configuration in the number of bits of the row addresses, the address of a bad cell is memorized. Yet, a destruction type memory device utilizing a heat dissolution of a fuse has the disadvantage of low reliability due to a possible reconnection of the dissolved fuse.
FIG. 2C shows the circuit configuration of a redundancy ROM comprising a transistor with a floating gate recently used as a memory cell of an EPROM.
In this case, a receipt at its gate of five volts [5V] from the readout direct current power source V.sub.cc energizes a transistor 18d, and the signal from OUT on its output side is at a low level, i.e. a datum being "zero [0]". An application of the gate signal Sc at a high voltage (e.g. twelve point five volts [12.5V]) to the gate of transistor 18d causes its floating gate to store electrons, thereby making it non-conductive. A pull-up resistor 18e causes the output signal from OUT on the output side to be at a high level, i.e. a datum being "one [1]".
A use of such a non-destruction type memory element enables a highly reliable redundancy ROM to be structured.
Generally, a semiconductor memory device such as an EPROM erases its data written on its memory cell array in the body of the EPROM. In doing so, it eliminates electrons stored in the floating gate of a memory cell transistor. A radiation of strong ultraviolet rays over an entire chip through the upper side of a silicon dioxide surface allows the electrons to be discharged.
However, when data written in the memory cell array are erased in this manner, it is necessary to avoid erasing, by the strong irradiated ultraviolet ray, data (indicating the address of a bad cell) written in the memory cell transistor (such as transistor 18d shown in FIG. 2C) forming the redundancy ROM 18. Thus, conventionally, so as to prevent the ultraviolet ray from erasing data stored in the redundancy ROM, the surface of a memory cell transistor, i.e. the insulation film 6, forming the redundancy ROM is covered with shield coating 35 e.g. made of aluminum, as shown in FIG. 3A.
Next, FIGS. 3A and 3B are referred to in explaining the configuration of a memory cell transistor of a conventional redundancy ROM 18.
Parts shown in FIGS. 3A and 3B which are identical to those shown in other drawings have the same numbers.
FIG. 3A shows the A--A' cutaway of a memory cell transistor of a conventional redundancy ROM.
In FIG. 3A, the N.sup.+ type drain diffusion area 4, the N.sup.+ type source diffusion area 5, the floating gate 2 and the control gate 3 on top of the P type silicon substrate 1 form an EPROM transistor in a redundancy ROM 18. An N.sup.- type union conductive well 31 ordinarily formed in a CMOS type integrated circuit is used to electrically connect the N.sup.+ type drain diffusion area 4 with an N.sup.+ type diffusion area 32, which is for drain terminal connection. Further, a drain terminal 36 is formed of aluminum. A P.sup.+ type diffusion area 33 in the N.sup.- type union conductive well 31 is provided between the N.sup.+ type drain diffusion area 4 and the N.sup.+ type diffusion area 32, which is for drain terminal connection. The P.sup.+ type diffusion area 33 is connected to an edge of the shield coating 35.
A field oxide surface and a PSG (Phospho-Silicate Glass) surface on the P type silicon substrate 1 form the insulation film 6. A contact part 35b of the shield coating 35 made of aluminum is connected to the N.sup.+ type source diffusion area 5 to function as a source terminal. Another contact part 35a of the shield coating 35 on the left hand side is connected to the P.sup.+ type diffusion area 33 provided in the N.sup.- type union conductive well 31. With such a connecting configuration, the shield coating 35 completely shields the memory cell transistors in the redundancy ROM 18, thereby enabling the contact part 35a to prevent the ultraviolet ray (shown as UV in FIG. 3A) irradiating the body of the EPROM from spilling over to the inside of the memory cell transistors.
The area covered by the shield coating 35 in a memory cell transistor of the redundancy ROM 18 having the above configuration need not be too large. The distance extending to the left hand side of the N.sup.+ type source diffusion area 5 need only be about a few tens of microns. Meanwhile, the N.sup.- type union conductive well 31 electrically connects the N.sup.+ type drain diffusion area 4 with the N.sup.+ type diffusion area 32 for drain terminal connection, thereby forming an electric link from the drain terminal 36 to the N.sup.+ type drain diffusion area 4. A source terminal 35c in the shield coating 35 in the memory cell transistor shown in FIGS. 3A and 3B is connected to the P.sup.+ type diffusion area 34 for contacting, thereby covering the surface of the P type silicon substrate 1 and the shield coating 35.
FIG. 3B is a top view of the memory cell transistor shown in FIG. 3A.
As described above, the P type silicon substrate 1 of the memory cell transistor touches, in the N.sup.- type union conductive well 31, the contact part 35a of the shield coating 35. It also touches, in the P.sup.+ type diffusion area 33 accompanied by the P.sup.+ type diffusion area 34, the shied coating 35 at its left and right sides, except for a lead part D of the control gate 3, of the P type silicon substrate 1 for shield. These are for preventing an ultraviolet ray from entering into the memory cell transistor. Although it is impossible to completely encapsulate the lead part D, the spacing between the control gate 3 and the surface of the P type silicon substrate 1 is extremely small, approximately at a few hundred angstroms. Therefore, the intrusion of an ultraviolet ray through the minimal spacing is almost negligible.
FIG. 4A shows an example of the form of the control gate 3 and the contact part 35a of the shield coating 35, which are illustrated in FIGS. 3A and 3B.
In reality, the contact part 35a in the lead part D is shaped into the form shown in FIG. 4A, and the control gate 3 is three-dimensionally reshaped to match the conclave. Thus, the intrusion of the ultraviolet ray is further restricted to almost nil.
FIG. 4B shows an equivalent circuit of an EPROM memory cell.
A predetermined voltage is applied to the drain terminal 36. The N.sup.+ type source diffusion area 5 is connected to the ground terminal. The N.sup.- type union conductive well 31 forms a drain parasitic resistance between the drain terminal 36 and the N.sup.+ type drain diffusion area 4.
The width of the N.sup.- type union conductive well 31 constrains the miniaturization of the redundancy ROM 18 conventionally configured as shown in FIG. 3. That is, the redundancy ROM 18 causes the N.sup.- type union conductive well 31 to connect the N.sup.+ type drain diffusion area 4 of a memory cell transistor with an external terminal, so as to prevent an undesirable intrusion of an ultraviolet ray into the memory cell transistor. However, when the ratio of impurities in the N.sup.- type union conductive well 31 is relatively low, the parasitic resistance to the N.sup.- type union conductive well 31 is large and it is feared that the voltage applied to the edge of the N.sup.+ type drain diffusion area 4 of the memory cell transistor falls.
For instance, when the voltage applied to the edge of the N.sup.+ type drain diffusion area 4 falls significantly, a write-in to the memory cell transistor is not conducted effectively. Therefore, so as to inhibit the voltage applied to the edge of the N.sup.+ type drain diffusion area 4 from falling and the parasitic resistance to the edge of the N.sup.+ type drain diffusion area 4 from rising, the N.sup.- type union conductive well 31 must be ensured to have a sufficient width. However, this prevents the redundancy ROM 18 from being miniaturized.
The problem of a difficulty in miniaturizing the redundancy ROM 18 becomes more critical in reducing the overall dimensions of a semiconductor memory device, because the differences in the dimensions of a memory cell array and those of a memory cell transistor become more apparent as the memory becomes more highly integrated.


According to an illustrative embodiment of the invention, a planetary gear box is combined with an electric generator of a motor-vehicle. The planetary gear box comprises a free wheel and a gear change clutch. Such, the transmission ratio of the planetary gear box is changeable. The components of the gear box are arranged at least partially in axially overlapping relationship so that a small overall axial dimension is obtained.

This invention refers to a gear unit for combination with an auxiliary power consuming unit of a motor-vehicle. An example of such an auxiliary power consuming unit is an electric power generator which is to be driven from the internal combustion engine of a motor-vehicle. Another example of an auxiliary power consuming unit is an air compressor or an oil pump. Such auxiliary power consuming units should be driven with a substantially constant r.p.m., in order to be most effective.
Internal combustion engines of motor-vehicles have highly varying r.p.m. in operation. This means that an auxiliary power consuming unit driven by the internal combustion engine receives highly varying input r.p.m. from the internal combustion engine.
It is, therefore, desirable to equalize the r.p.m. of the auxiliary power consuming units in spite of the varying r.p.m. of the internal combustion engine driving the respective auxiliary power consuming unit.

Gear unit for combination with an auxiliary power consuming unit of a motor-vehicle


Described herein are improved configurations for a wireless power transfer. Described are methods and designs for implantable electronics and devices. Wireless energy transfer is utilized to eliminate cords and power cables puncturing the skin to power an implantable device. Repeater resonators are employed to improve the power transfer characteristics between the source and the device resonators.

Field
This disclosure relates to wireless energy transfer, methods, systems and apparati to accomplish such transfer, and applications.
Description of the Related Art
Energy or power may be transferred wirelessly using a variety of techniques as detailed, for example, in commonly owned U.S. patent application Ser. No. 12/789,611 published on Sep. 23, 2010 as U.S. Pat. Pub. No. 2010/0237709 and entitled "RESONATOR ARRAYS FOR WIRELESS ENERGY TRANSFER," and U.S. patent application Ser. No. 12/722,050 published on Jul. 22, 2010 as U.S. Pat. Pub. No. 2010/0181843 and entitled "WIRELESS ENERGY TRANSFER FOR REFRIGERATOR APPLICATION" the contents of which are incorporated in their entirety as if fully set forth herein. Prior art wireless energy transfer systems have been limited by a variety of factors including concerns over user safety, low energy transfer efficiencies and restrictive physical proximity/alignment tolerances for the energy supply and sink components.
Implantable devices such as mechanical circulatory support (MCS) devices, ventricular assist device (VAD), implantable cardioverter defibrillators (ICD), and the like may require an external energy source for operation for extended period of time. In some patients and situations the implanted device requires constant or near constant operation and has considerable power demands that require connection to an external power source requiring percutaneous cables or cables that go through the skin of the patient to an external power source increasing the possibility of infection and decreasing patient comfort.
Therefore a need exists for methods and designs for energy delivery to implanted devices without requiring direct wire connections.

Wireless energy transfer for implantable devices


Provided are compositions, methods and uses for identifying persons at an increased risk of infection by, transmission of, or accelerated progression of a disease caused by an HIV-1 virus. Diagnostic, prognostic and combined therapeutic kits are also provided.

1. Field of the Invention
The present invention relates generally to the fields of molecular biology and genetics. More particularly, the invention provides compositions, methods and uses for identifying persons at an increased risk of infection by, transmission of, or accelerated progression of a disease caused by an HIV-1 virus. Diagnostic, prognostic and combined therapeutic kits are also provided.
2. Description of Related Art
Infection with HIV and the resulting diseases, including full-blown AIDS, remain a significant worldwide health problem. Methods are urgently needed to further understand the infection and transmission process and factors that pre-dispose certain individuals to increased risks.
Results from studies on the viral and host genetic and immunological factors that influence in HIV pathogenesis have been reported (Cairns and D'Souza, 1998; Berger, 1997; Fauci, 1996; Cohen et al., 1997; Buchacz et al., 1998; Rosenberg and Walker, 1998; Ferbas, 1998; Shearer and Clerici, 1998; Graziosi et al., 1998). Among the host factors that influence HIV-1 pathogenesis are non-MHC genetic determinants (chemokine system gene variants), MHC genetic determinants (HLA and linked genes), and chemokine related inhibition of HIV-1.
Several chemokine receptors have been identified as co-receptors with CD4 for HIV (Deng et al., 1996; Doranz et al., 1996; Moore et al., 1997; Cairns and D'Souza, 1998; Berger, 1997; Cohen et al., 1997; Feng et al., 1996; Choe et al., 1996; Deng et al., 1997; Zhang et al., 1998; Garzino-Demo et al., 1998; Berger et al., 1998; Unutmaz et al., 1998; Bjorndal et al., 1997; D'Souza and Harden, 1996; Fauci, 1996). These include CCR5, used preferentially by macrophage-tropic strains (M-tropic; non-synctium inducing (NSI); R5), and CXCR4, utilized by T-cell-tropic strains (T-tropic; synctium inducing (SI); X4). In addition, several R5 strains can use CCR2B or other co-receptors, although the role of this expanded receptor repertoire in vivo is not clear.
Analyses of different receptor alleles in HIV-1 patients have led to conflicting information regarding their importance to infectivity and disease progression (Dean et al., 1996; Michael et al., 1997a; 1997b; Zimmerman et al., 1997; de Roda Husman et al., 1997; Rizzardi et al., 1998; Meyer et al., 1997; Katzenstein et al., 1997; Eugen-Olsen et al., 1997; 1998; Hendel et al., 1998; Huang et al., 1996; Smith et al., 1997; Kostrikis et al., 1998; Anzala et al., 1998; van Rij et al., 1998; Rizzardi et al., 1998; Hendel et al., 1998).
In the U.S., the genetic determinants of HIV-1 in adults have been examined primarily in three different cohorts, each differing in risk factors for HIV-1 (Dean et al., 1996; Huang et al., 1996; Michael et al., 1997a; 1997b; Smith et al., 1997; Zimmerman et al., 1997; Winkler et al., 1998; Kostrikis et al., 1998; Martin et al., 1998; McDermott et al., 1998). They include multi-center cohort studies biased towards homosexual, Caucasian men (Multicenter AIDS cohort study (MACS); San Francisco City Cohort); hemophiliacs (Multicenter Hemophilia Cohort Study); and the single African-American cohort that is biased heavily towards an intravenous drug using population (AIDS link to Intravenous Experience (ALIVE)).
Despite such multi-center studies, it is unclear whether the results of the reported associations can be generalized to other ethnic/population groups. More recent publications have proposed associations of certain receptor promoter polymorphisms with an accelerated disease course in Caucasians (Martin et al., 1998; McDermott et al., 1998). However, as with the studies described above, the promoter studies attempt to correlate the association of promoter polymorphisms with an accelerated disease course, without consideration of the complete genotypic information present in the study group.
Therefore, it is evident that the art still needs improved methods of correlating the risk of infection by, transmission of, or accelerated progression of diseases caused by HIV-1. In particular, correlative methods that take into consideration all of the relevant genotypic (haplotype pairs) information, thus providing a stronger correlation, would represent a significant advance in this field.

Screening for disease susceptibility by genotyping the CCR5 and CCR2 genes

United States of America as represented by the Secretary of the Air Force

The University of Texas System, Board of Regents

The University of Utah Research Foundation


The electronic-to-optical multiplexer takes n electronic inputs Xi where i=0 to n−1; converts Xi into optical signals Yi each with a different wavelength; wavelength multiplexes Yi; samples Yi with an optical frame sync signal having a period of n*p seconds and a pulse width w; wavelength demultiplexes Yi; staggers Yi by i*p seconds; wavelength multiplexes Yi; gates an optical clock signal with Yi; and uses the gated optical clock signal as the optical output.

1. Field of Invention
This invention is an ultrafast optical time division multiplexed optical communication system comprising an ultrafast electronic-to-optical multiplexer and an ultrafast optical-to-electronic demultiplexer.
2. Prior Art
A common problem with ultrafast optical communication systems is how to multiplex electronic rate signals up to optical rates and demultiplex the optical rate signals down to electronic rates.
One approach to implementing an electronic-to-optical multiplexer, as shown in FIG. 1 (prior art) converts electronic signals into optical signals and then uses optical switches to select the optical signal. One problem with this approach is that it takes n optical switches to multiplex n electronic signals.
One approach to implementing an optical-to-electronic demultiplexer as shown in FIG. 1 (prior art) uses optical switches to select a time slice of the time division multiplexed optical signal. The selected time slice is then detected and converted into an electronic signal. One problem with this approach is that it takes n optical switches to demultiplex n electronic signals.
One optical switch that has been used for multiplexing and demultiplexing is the Sagnac switch, also referred to as a nonlinear optical loop mirror (NOLM). This optical switch is discussed in the article, "All-optical arbitrary demultiplexing at 2.5 Gb/s with tolerance to timing jitter," by N. Whitaker, et al., Optical Letters, vol. 16, pp. 1838-1840, 1991. Over the years, the multiplexing and demultiplexing rate has been pushed upwards. This advance is illustrated by the article, "1.28 Tbit/s-70 km OTDM transmission using third- and fourth-order simultaneous dispersion compensation with a phase modulator," M. Nakazawa, et al., Electronics Letters, vol. 36, issue 24, p. 2027-2029, Nov. 23, 2000.
The Sagnac switch is discussed in more detail in "Low distortion all-optical threshold device," H. Avramopoulos, et al., U.S. Pat. No. 5,146,517, Sep. 8, 1992; "Sagnac optical logic gate," M. C. Gabriel, et al., U.S. Pat. No. 5,144,375, Sep. 1, 1992; in the background discussion of "Optical State Machines," U.S. patent application 11380768; and in "Sagnac fiber logic gates and their possible applications: a system perspective," by A. Huang, et al., Applied Optics, vol. 33, no. 26, pp. 6254-6267, Sep. 10, 1994.
Briefly, there are two versions of the Sagnac logic gate. One is based on polarization while the other is based on wavelength. The polarization based Sagnac logic gate is shown in FIG. 2 (prior art). The polarization based Sagnac switch comprises a 50/50 polarization maintaining splitter 11 with a first and second end each with a first and second bi-directional port each with a fast and slow axis of polarization; an "input" polarization selective coupler 13 with a first and second end each with a first and second bi-directional port each with a fast and slow axis of polarization; a loop of polarization maintaining fiber 14 with a first and second end each with a fast and slow axis of polarization; a "dump" polarization selective coupler 12 with a first and second end each with a first and second bi-directional port each with a fast and slow axis of polarization; a clockwise polarization maintaining optical circulator 10 with three bi-directional ports each with a fast and slow axis of polarization; a delay 15 with an first and second end each with a fast and a slow axis of polarization; and a delay 16 with a first and second end each with a fast and a slow axis of polarization.
The slow axis of polarization output of the second (clockwise) port of optical circulator 10 is connected to the slow axis of polarization of the first port of the first end of 50/50 polarization maintaining splitter 11. The slow axis of polarization of the first output of the second end of splitter 11 is connected to the slow axis of polarization first port of the first end of the "dump" polarization selective coupler 12. The slow axis of polarization of the first port of the second end of polarization selective coupler 12 is connected to the slow axis of polarization of the first end of the loop of polarization maintaining fiber 14. The slow axis of polarization of the second end of the loop of fiber 14 is connected to the slow axis of polarization of the first port of the second end of the "input" polarization selective coupler 13. The slow axis of polarization of the first port of the first end of the input polarization selective coupler 13 is connected to the second port of the second end of 50/50 polarization maintaining splitter 11.
Input A is connected to the slow axis of polarization of the first port of optical circulator 10. Output X is connected to the slow axis of polarization of the second port of the first end of 50/50 polarization maintaining splitter 11. Input B is connected to the fast axis of polarization of the second port of the first end of "input" polarization selective coupler 13. Output C is connected to the fast axis of polarization of the first port of the first end of the "dump" polarization selective coupler 12. Output Y is connected to the slow axis of polarization of the output of the third (clockwise) port of optical circulator 10.
The length of the optical fiber 14 is selected such that input B signal on the fast axis of polarization has enough time to completely pass through input A signal on the slow axis of polarization.
In the un-switched mode of operation, a first signal with a slow axis of polarization is fed to input A. Input A is connected via circulator 10 to splitter 11. Splitter 11 splits the signal into a clockwise and counter clockwise portion. The clockwise portion passes via "input" coupler 13, fiber loop 14, and "dump" coupler 12 to splitter 11. Splitter 11 splits the clockwise signal into two portions. One portion emerges at the first port of the first end of splitter 11; while the other portion emerges at the second port of the first end of splitter 11. The counter clockwise portion passes via "dump" coupler 12, fiber loop 14, and "input" coupler 13 to splitter 11. Splitter 11 splits the counter clockwise signal into two portions. One portion emerges at the first port of the first end of splitter 11, while the other portion emerges at the second port of the first end of splitter 11. The clockwise and counter clockwise portions of the input signal constructively interfere and reconstruct the input A signal at the first port of the first end of splitter 11. As a result, a reconstructed version of the input A signal emerges from output Y, sometimes called the normally connected output, via circulator 10. The clockwise and counter clockwise portions of the input A signal destructively interfere at the second port of the first end of splitter 11. As a result, no signal emerges from output X, sometimes called the normally open output. The un-switched mode of operation is commonly called the "mirror" mode, since the input signal fed to first port of the first end of splitter 11 emerges at same port and the Sagnac switch appears to act like a mirror.
In the switched mode of operation, a first input signal with a slow axis of polarization is fed to input A. Input A is connected via optical circulator 10 to splitter 11. Splitter 11 splits the input A signal into a clockwise and counter clockwise portion. The clockwise portion passes via the slow axis of propagation of "input" coupler 13, polarization maintaining fiber loop 14, and "dump" coupler 12 to splitter 11. Splitter 11 splits the clockwise signal into two portions. One portion emerges at the first port of the first end of splitter 11, while the other portion emerges at the second port of the first end of splitter 11. The counter clockwise portion passes via the slow axis of propagation of "dump" coupler 12, fiber loop 14, and "input" coupler 13, to splitter 11. Splitter 11 splits the counter clockwise signal into two portions. One portion emerges at the first port of the first end of splitter 11, while the other portion emerges at the second port of the first end of splitter 11. Meanwhile, a second input signal with a fast axis of polarization is fed to input B and passes via the fast axis of polarization of "input" coupler 13, fiber loop 14, and "dump" coupler 12 to output C. The input B signal co-propagates with the clockwise portion of the input A signal and counter-propagates with the counter clockwise portion of the input B signal. The ultrafast, nonlinear, all-optical Kerr effect shifts the phase of the clockwise portion of the input A signal relative to the counter clockwise portion of the input A signal. The amount of this phase shift is determined by the intensity of the input B signal and the amount of time the co-propagating clockwise input A signal and input B signal temporally overlap. The overlap time depends on the length of the loop and the difference in the index of refraction of the slow and fast axis of polarization of the couplers and fiber loop. The intensity of the input B signal and the physical parameters of the Sagnac switch are selected such that the input B signal induces a π or a 180 degree phase shift between the clockwise and counter clockwise portions of the input A signal. The clockwise and counter clockwise portions of input A signal then destructively interfere at the first port of the first end of splitter 11 that is connected via circulator 10 to output Y. As a result, no signal will emerge at output Y. Meanwhile, the clockwise and counter clockwise portions of input A signal constructively interfere and reconstruct the input A signal at the second port of the first end of splitter 11 which is connected to output X. As a result, a reconstructed version of the input A signal emerges at output X. The switched mode of operation is commonly called the "loop" mode of operation, since the input signal fed to the first port of the first end of splitter 11 emerges at the second port of the first end of splitter 11 and the Sagnac switch acts like a loop.
As mentioned previously, the Sagnac switch can also be based on wavelength. This implementation is discussed in the cited references.
The Sagnac switch has several useful properties relevant this invention: the input A and input B are capable of handling optical rate signals; the input A and input B signals do not have to be the same wavelength; the input A and input B signals do not have to arrive simultaneously; the input B signal can be distorted; and the input B signal can control a wavelength division multiplexed input A signal.

Ultrafast optical communications system with multiplexer and demultiplexer

Abstract: The optical-to-electronic demultiplexer takes n optical sources Zi each with a different wavelength; wavelength multiplexes Zi; gates Zi with the input of the optical-to-electronic demultiplexer; wavelength demultiplexes Zi; staggers Zi by (n−i)*p seconds; wavelength multiplexes Zi; gates Zi with the frame sync signal delayed by (n−1)*p seconds; wavelength demultiplexes Zi; detects Zi with detectors DECTi; and uses the output of DECTi as the electronic outputs.