A system and method for automatically determining the standard cardiac image views as defined by the American Heart Association from volumetric data of the chest including the heart. The system and method can be used by a health practitioner to quickly see the two dimensional views from which a diagnosis is generally made. The left ventricle is detected. Then the relative orientation of the right ventricle is determined and the standard cardiac views are determined.

The present invention relates to processing systems and methods for automatically determining predefined viewing directions of a heart from medical imaging data.
The standard views for the display of cardiac-related imagery are defined by the American Heart Association. These views include the short axis view, the vertical long axis view, and the horizontal long axis view. With reference to FIG. 1, the standard views may be defined in relation to the left ventricle 12 and right ventricle 14 of a heart 10, and include a short axis view (SA), a vertical long axis view (VLA) and a horizontal long axis view (HLA). For orientation reference FIG. 2 provides a schematic view of the heart and FIG. 3 provides a view of an image slice with right and left ventricles.
The short axis view is orthogonal to the long axis of the left ventricle, with the long axis going through the center of the image. The short axis cuts the long axis in the middle of the axis, and so the image is approximately centered on the center of the left ventricle. The viewing direction is from the cardiac apex towards the base of the left ventricle, with the top-side of the image pointing towards the anterior of the patient.
The vertical long axis view (VLA) is orthogonal to both the short axis view and the horizontal long axis view. For VLA views, the long axis of the left ventricle is parallel with the row vector of the, and goes through the center of the image (i.e. the long axis is a horizontal line dividing the image plane into upper and lower halves). The center of the image is aligned with the middle of the long axis of the left ventricle, with the viewing direction from right to left, and the top-side of the image pointing towards the anterior of the patient.
The horizontal long axis view (HLA) is orthogonal to both the short axis view and the vertical long axis view. For HLA views, the long axis of the left ventricle is parallel with the column vector of the image, and goes through the center of the image (i.e. the long axis is a vertical line dividing the image plane into left and right halves). The center of the image is aligned with the middle of the long axis of the left ventricle, with the viewing direction basically from the posterior to the anterior of the patient.
Much of the prior work has focused on scan planning for magnetic resonance imaging (MRI). Most cardiac MRI studies are two-dimensional (2D) in nature. Several 2D scout images are acquired to visualize the thorax and heart anatomy, and then a set of parallel 2D scans is done oriented with the short-axis of the heart. One or two long axis 2D images may also be scanned. Automating the process of planning this type of cardiac MRI study has been investigated. Lelieveldt et al., in an article entitled "Automated observer-independent acquisition of cardiac short-axis MR images: a pilot study", in Radiology, 221(2), pages 537-542 (2001), automate planning for only the short-axis view. The work of Jackson et al., disclosed in an article entitled "Automatic Planning of the Acquisition of Cardiac MR Images", in MICCAI, September 2003, pages 541-548, includes automatic planning of the long-axis views. Lelieveldt et al. use a template matching scheme for the entire thorax using fuzzy implicit surfaces on 2D images aligned with the axes of the scanner. The template includes a definition of the likely cardiac short-axis orientation. This is computationally expensive and assumes a fixed field of view. Jackson et al. use an Expectation-Maximization (EM) algorithm to segment the chambers of the heart in a stack of 2D scans that are taken at an orientation found to be a good approximation to the short axis in fifty adult patients. EM algorithms are also computationally expensive. A line is then fit through the centroids found for the left ventricle in each 2D image to determine the left ventricle long-axis. The HLA is defined at an orientation through the left ventricle long axis and the average of the points on the right ventricle farthest from the left ventricle.
In U.S. patent application Ser. No. 10/852,834 by T. O'Donnell and B. Cowan, filed May 25, 2004, and entitled "Automatic Optimal View Determination for Cardiac Acquisitions," incorporated herein by reference, sampling the heart and chest in axial, sagittal, and coronal images and then using a pre-existing segmentation algorithm (such as the segmentation algorithm disclosed by M. P. Jolly in "Combining edge, region, and shape information to segment the left ventricle in cardiac MR images," MICCAI, September 2001, pages 482-490) to find the borders of the left ventricle is disclosed. An ellipsoid is fit to these borders, and the long-axis of the ellipse is taken as a first approximation to the long-axis of the left ventricle. The direction of the HLA is determined as an orientation through the left ventricle long axis and the direction of the right ventricle relative to the left ventricle. The VLA is defined as being orthogonal to the SA and the HLA. These estimates can be refined by evaluating scans taken oriented with the estimated SA, HLA, VLA.
Despite the availability of these algorithms, it is nevertheless desirable to provide yet more accurate means of automatically estimating the SA, HLA, and VLA views from volumetric data.

Automatic determination of the standard cardiac views from volumetric data acquisitions


A semiconductor device, such as a RF LDMOS, having a ground shield that has a pair of stacked metal layers. The first metal layer extends along the length of the semiconductor device and is formed on the upper surface of the semiconductor device body. The first layer has a series of regularly spaced apart lateral first slots. The second metal layer, coextensive with and located above the first metal layer, has a series of regularly spaced apart lateral second slots. The second slots overlie the spaces between the first slots, and the continuous portions of the second metal layer overlie the first slots. The slots are substantially parallel to wires extending over the ground shield. The ground shield is not limited to only two metal layers. The ground shield has a repeating unit design that facilitates automated design.

Radio frequency (RF) laterally diffused metal-oxide semiconductor (LDMOS) power transistors provide good performance in the frequency range that are used in cellular base stations, and like applications. Typically, a high power LDMOS uses wires and on-chip integrated capacitors to achieve an impedance match for device input and output. The device includes a chip with input and output wires that extend over at least part of the chip to capacitors at outboard sides of the device, and a ground shield to minimize or prevent interference resulting from electromagnetic fields generated when current flows through the wires. The use of a so-called Faraday Shield to reduce interference is well known, but shield designs vary.
U.S. Pat. No. 6,744,117 relates to a method of manufacturing RF LDMOS and shows a ground shield that has two metal layers. Briefly, FIGS. 2 and 3 of the '117 patent shows a first ground shield formed (by metallic deposit), along with a first set of drain contacts. A second interlevel dielectric layer (ILD1) is formed over the first ground shield and the contacts. The second ohmic or metal layer is then formed over ILD1 and is patterned to provide a ground shield and drain contacts. The second ground shield has electrical connection with first ground shield. The structure shown is suitable for plastic packaging.
Another LDMOS ground shield design is shown in FIG. 1, in top view. This design shows a shielded device 10 that includes a chip 24 with an output ground shield 18 and input ground shield 19. The device 10 has circuitry 26, inboard wire pads 12, 13 on either side of the circuitry 26, each having an outboard wire pad 14, 15, respectively, for wire connection on over the ground shield on each side of the device. The capacitors 16, formed on chip 24, are located along the opposed sides of the device. Wires, not shown, extend over a portion of the chip 24 from inboard pad 12 to outboard pad 14; and from inboard pad 13 to outboard pad 15. Thus, the wires cross over above the ground shields 18, 19 and these shields must prevent or minimize interference from and loss by the overhead wires. The ground shields 18, 19 are each continuous, stretching along the entire length of the device where there are overhead wires, to shield it. The shields 18, 19 are each of two metal layers, with the upper layer and lower layer (not shown). An array of vias 20 extends beneath the upper metal layer and represents the only discontinuities in the topography of upper metal layer.
With a large, high-powered device, heat is generated during operation, and metallic components tend to expand at a higher rate, and to a greater extent, with increase in temperature than semiconductor materials because of differences in coefficients of thermal expansion (CTE). This expansion differential introduces mechanical stresses into the device that might shorten its life, or affect performance, or both. Because of these CTE differences, the ground shield as described in FIG. 1 is susceptible to thermally-induced stress (metal has a higher coefficient of thermal expansion than the chip) leading to passivation cracks and delamination. Further, there is an adverse etch loading effect during fabrication of the shield at the contacts and vias due to the large areas to be etched.
Accordingly, it is desirable to develop ground shields, especially for large, high-powered LDMOS, which are more compatible with the coefficient of thermal expansion of the semiconductor materials of the device, while at the same time providing good shielding from electromagnetic effects. It is further desirable to reduce the etch loading effect at contact and via during fabrication of these shields. In addition it is also desirable that the shields are suitable for manufacture with automated design tools. These and other desirable features and characteristics of the embodiments of the present disclosure will become apparent from the subsequent detailed description and the appended claims, taken in conjunction with the accompanying drawings and the foregoing technical field and background.


A method of colorizing stainless steel strip involves the continuous surface treatment of stainless steel strip with aqueous suspensions of rare earth oxide nano or micro particles or aqueous rare earth nitrate solutions of nano or micro particles. The surface treatment can be applied by roll coating, spraying or other conventional application techniques. The coated strip is then continuously annealed. The surface treatment can provide a variety of colors. It also improves corrosion resistance of the processed stainless steel strip. Steel strip treated in this manner is suitable for a variety of applications in the building systems, automotive and appliance markets.

Surfaces of stainless steels can be modified using various techniques. For appearance-critical applications such as building panels, roofs or trim, stainless steel can be colorized using chemical treatments or paint. Stainless steel surfaces can be hardened by nitriding processes involving exposure to gasses, salt baths, or plasmas. Oxidation performance has been reported to be improved by alloying stainless steel with rare earth elements or by using ion implantation or sol-gel type coating techniques. All of these surface modification procedures are time consuming, involve the use of hazardous materials, and/or add substantial cost to the final material.
An alternative surface treatment and subsequent annealing process has been developed that imparts a durable colored non-metallic appearance to stainless steel alloys. This new process using thermal treatment, rather than the prior art chemical treatment to produce oxides on the surface of stainless steel and thereby impart color and corrosion resistance to the steel. Coils are processed using a standard continuous annealing cycle.
In some embodiments, the stainless steel material is first treated with a suspension containing up to 5% by weight nano- or micro-particles of a rare earth oxide, such as yttrium oxide. An aqueous nitrate rare earth solution can also be utilized. The oxide appears to impart various colors as well as superior corrosion resistance, each of which can be an important factor in exterior applications.
This new continuous annealing process is less expensive than alternative prior art stainless surface treatment processes because the colorizing processing can be accomplished using standard annealing equipment as part of the processing of steel strip, resulting in a relatively low cost per pound of final material. It also provides a "greener" alternative to conventional surface modification processing because chemical use is limited.

Method of colorizing stainless steel using strip anneal processing


The invention relates to a process for the production of electrolytic capacitors with low equivalent series resistance and low residual current consisting of a solid electrolyte made of conductive polymers and an outer layer containing conductive polymers, to electrolytic capacitors produced by this process and to the use of such electrolytic capacitors.

1. Field of Invention
The invention relates to a process for the production of electrolytic capacitors with low equivalent series resistance and low residual current consisting of a solid electrolyte made of conductive polymers and an outer layer containing conductive polymers, to electrolytic capacitors produced by this process and to the use of such electrolytic capacitors.
2. Description of Related Art
A conventional commercial solid electrolytic capacitor generally consists of a porous metal electrode, an oxide layer located on the metal surface, an electrically conductive solid introduced into the porous structure, an outer electrode (contacting), such as a silver layer, and further electric contacts and encapsulation.
Examples of solid electrolytic capacitors are tantalum, aluminium, niobium and niobium oxide capacitors with charge transfer complexes, manganese dioxide or polymeric solid electrolytes. The use of porous bodies has the advantage that very high capacity densities, i.e. high capacitance, may be achieved in a small space owing to the large surface area.
π-conjugated polymers are particularly suitable as solid electrolytes owing to their high electrical conductivity. π-conjugated polymers are also called conductive polymers or synthetic metals. They are becoming increasingly important economically, as polymers have advantages over metals, with respect to processability, weight and the targeted adjustment of properties by chemical modification. Polypyrroles, polythiophenes, polyanilines, polyacetylenes, polyphenylenes and poly(p-phenylene-vinylenes) are examples of known π-conjugated polymers, poly-3,4-(ethylene-1,2-dioxy)thiophene, often also called poly(3,4-ethylenedioxythiophene), being a particularly important, industrially used polythiophene, as it has very high conductivity in its oxidised form.
Technical development in electronics increasingly requires solid electrolytic capacitors with very low equivalent series resistance (ESR). This is due, for example, to decreasing logic voltages, a higher integration density and increasing clock frequencies in integrated circuits. A low ESR also reduces the energy consumption, and this is particularly advantageous for mobile, battery-operated applications. There is therefore a wish to reduce the ESR of solid electrolytic capacitors as far as possible.
European patent specification EP-A 340 512 describes the production of a solid electrolyte made of 3,4-ethylene-1,2-dioxythiophene and the use of its cationic polymer produced by oxidative polymerisation as the solid electrolyte in electrolytic capacitors. Poly(3,4-ethylenedioxythiophene) as a substitute for manganese dioxide or charge transfer complex in the solid electrolytic capacitors reduces the equivalent series resistance of the capacitor owing to the higher electrical conductivity and improves the frequency behaviour.
In addition to a low ESR, modern solid electrolytic capacitors require a low residual current and good stability with respect to external stresses. High mechanical stresses that may greatly increase the residual current of the capacitor anode occur in particular during the production process when encapsulating the capacitor anodes.
Stability toward such stresses and therefore a low residual current may primarily be achieved by an approximately 5 to 50 μm thick outer layer made of conductive polymers on the capacitor anode. Such a layer is used as a mechanical buffer between the capacitor anode and the cathode-side electrode. This prevents the silver layer (contacting), for example when mechanically stressed, from coming into direct contact with the dielectric or from damaging it and thus increasing the residual current of the capacitor. The conductive polymeric outer layer itself should exhibit what is known as self-healing behaviour: relatively small defects in the dielectric on the outer anode surface, which occur despite the buffer effect, are electrically insulated by the conductivity of the outer layer being destroyed at the defective point by the electric current.
The formation of a thick polymeric outer layer by in situ polymerisation is very difficult. Layer formation requires a very large number of coating cycles in this process. As a result of the large number of coating cycles, the outer layer is coated very unevenly, in particular the edges of the capacitor anode are often inadequately covered. Japanese patent application JP-A 2003-188052 recites that homogeneous edge coverage requires expensive matching of the processing parameters. However, this makes the production process very susceptible to interruptions. An addition of binder materials for quicker layer build-up is also difficult, as the binder materials hinder the oxidative in situ polymerisation. In addition, the layer polymerised in situ generally has to be freed from residual salts by washing, whereby holes are produced in the polymer layer.
A dense electrically conductive outer layer with good edge coverage may be achieved by electrochemical polymerisation. However, electrochemical polymerisation requires that firstly a conductive foil is deposited on the insulating oxide layer of the capacitor anode and that this layer is then electrically contacted for each individual capacitor. This contacting is very expensive in mass production and may damage the oxide layer.
Conductive outer layers on capacitors may also be produced by mixing a powder of a conductive polymer with a binder and applying this mixture to a capacitor body. However, high contact resistance between the individual powder particles results in excessive electrical resistance, preventing the production of solid electrolytic capacitors with low ESR.
In EP-A-637043, the addition of conductive powders significantly increases the unevenness of an outer layer produced by chemical in-situ polymerisation, to allow improved adhesiveness between the outer graphite layer and the polymer film and thus to achieve lower ESR values and loss factors. A drawback of this method, however, is that the polymeric outer layer becomes very uneven (unevenness: 10 to 50 μm). As the overall thickness of the polymeric outer layer should be no greater than 5 to 50 μm, to achieve a low ESR, such a high degree of unevenness causes the outer layer to be locally very thin and high residual currents thus to occur. Voltage peaks and electrical breakdowns may also occur at the uneven points of the polymeric outer layer.
In Japanese patent applications JP-A 2001-102255 and JP-A 2001-060535, a layer of polyethylenedioxythiophene/polystyrene sulphonic acid (PEDT/PSS), also called polyethylenedioxythiophene/polystyrene sulphonic acid complex or PEDT/PSS complex, is applied directly to the oxide film to protect the oxide film and for improved adhesion of the solid electrolyte to the oxide film. The outer layer is then applied to this layer by in situ polymerisation or by impregnation of the capacitor anode with tetracyanoquinodimethane salt solution. However, this process has the drawback that the PEDT/PSS complex does not penetrate into porous anode bodies with small pores. Consequently, modern, highly porous anode materials cannot be used.
U.S. Pat. No. 6,001,281 describes, in the examples, capacitors with a solid electrolyte made of polyethylenedioxythiophene (PEDT) produced in situ and an outer layer made of PEDT/PSS complex. However, the drawback of these capacitors is that they have a high ESR of 130 mΩ and higher.
In EP-A-1524678, a polymeric outer layer is produced by applying a dispersion containing at least one polymeric anion and at least one optionally substituted polyaniline and/or at least one polythiophene with recurring units of general formula (I), (II) or recurring units of general formulae (I) and (II),

and a binder. Although this process allows the edge coverage to be improved, it does not allow the production of polymeric outer layers having a reliably reproducible density.

Electrolytic capacitors with a polymeric outer layer and process for the production thereof


A method for operating a refrigeration system for a mobile unit includes steps of: 1) providing a refrigeration unit having a compressor, an evaporator, and at least one fan operable to move air towards the evaporator, a generator dedicated to the refrigeration unit, and a battery; 2) determining at least one environmental parameter in one or both of the mobile unit and the refrigeration unit; and 3) selectively operating the refrigeration unit in one of a plurality of modes based on the environmental parameter. The plurality of modes includes a first mode wherein at least the fan is powered by the battery, and a second mode wherein the compressor and the fan are powered by the generator.

1. Technical Field
This disclosure relates generally to heat exchange systems and, more particularly, to a hybrid refrigeration system for a mobile unit.
2. Background Information
Heat exchange systems can be used to regulate environmental conditions within a mobile unit (e.g., a vehicle, a truck container, a truck trailer, a shipping container, etc.). Typically, heat exchange systems are powered either directly or indirectly by an internal combustion engine. The engine may be operated during high load conditions (e.g. when the heat exchange systems require/draw a relatively large quantity of power), during low load conditions (e.g. when the heat exchange systems require a relatively small quantity of power), and during idle conditions (e.g. when the heat exchange systems are idle and require no power).
In an effort to reduce energy consumption and costs associated therewith, it is known to operate the engine of a heat exchange system in an operational mode where the engine is subject to periods of operation and periods of rest. This mode of operation can be referred to as a "start and stop" mode of operation. One of the issues with the start and stop mode of operation is that when the engine is needed but the load on the heat exchange system is low, the engine may produce more power than the heat exchange system requires, which negatively effects the efficiency of the system. Another issue with the start and stop mode is that when the system is not operating, the air within the mobile unit is likely to be not circulating. As a result, localized thermal hotspots (and associated steep temperature variances) may form within the mobile unit. The formation of these hotspots can lead to inaccurate temperature readings and reduce the efficiency of the system. For example, if the temperature of the air proximate a sensor within the mobile unit is higher or lower than air elsewhere within the unit, the information provided by the sensor and any actions based on that information may be suspect. To reduce these inaccurate readings, some prior art systems "prime" the sensors within the mobile unit. The term "prime" is used to refer to scenarios where the prior art heat exchange system, including the engine, is run to circulate air within the mobile unit for a period of time until the temperature of the air within the mobile unit is more uniformly distributed. However, similar to low load conditions, the engine used to create the circulation typically produces more power than is required to "prime" the system and energy is consequently wasted. There is, therefore, a need in the art for a heat exchange system that reduces energy consumption during low load conditions.

Hybrid refrigeration system for a mobile unit and method of operation


The present invention provides a lithographic printing plate comprising on a roughened substrate a substantially conformal photosensitive layer and a substantially conformal overcoat. The photosensitive layer is substantially conformally coated on the roughened substrate surface and the overcoat is substantially conformally coated on the photosensitive layer surface so that the surface of the overcoat has peaks and valleys substantially corresponding to the major peaks and valleys of the substrate microscopic surface. The lithographic plate of such a configuration can provide no or low tackiness and excellent block resistance, while allowing excellent press durability. For on-press developable lithographic plate, such a plate configuration also allows excellent on-press developability.

This invention relates to lithographic printing plates. More particularly, it relates to lithographic plates having on a roughened substrate a substantially conformally coated photosensitive layer and a substantially conformally coated overcoat.
Lithographic printing plates (after process) generally consist of ink-receptive areas (image areas) and ink-repelling areas (non-image areas). During printing operation, an ink is preferentially received in the image areas, not in the non-image areas, and then transferred to the surface of a material upon which the image is to be produced. Commonly the ink is transferred to an intermediate material called printing blanket, which in turn transfers the ink to the surface of the material upon which the image is to be produced.
At the present time, lithographic printing plates (processed) are generally prepared from lithographic printing plate precursors (also commonly called lithographic printing plates) comprising a substrate and a photosensitive coating deposited on the substrate, the substrate and the photosensitive coating having opposite surface properties. The photosensitive coating is usually a photosensitive material, which solubilizes or hardens upon exposure to an actinic radiation. In positive-working systems, the exposed areas become more soluble and can be developed to reveal the underneath substrate. In negative-working systems, the exposed areas become hardened and the non-exposed areas can be developed to reveal the underneath substrate. Conventionally, the actinic radiation is from a lamp (usually an ultraviolet lamp) and the image pattern is generally determined by a photomask that is placed between the light source and the plate. With the advance of laser and computer technologies, laser sources have been increasingly used to directly expose a printing plate according to digital imaging information.
Currently, most commercial lithographic plates require a development process after the plates being exposed and before put on press. A liquid developer is used to dissolve and clean off the non-exposed areas (for negative plate) or the exposed areas (for positive plate). Such a development process is time and labor consuming and generates wet waste. It would be desirable that such a tedious development process can be eliminated.
On-press developable lithographic printing plates have been disclosed in the literature. Such plates can be directly mounted on press after exposure to develop with ink and/or fountain solution during the initial prints and then to print out regular printed sheets. No separate development process before mounting on press is needed. Among the on-press developable lithographic printing plates are U.S. Pat. Nos. 5,258,263, 5,407,764, 5,516,620, 5,561,029, 5,616,449, 5,677,110, 5,811,220, and 6,014,929.
Lithographic plates having a photo-insensitive overcoat on the photosensitive layer have been disclosed in the patent literature, including U.S. Pat. Nos. 5,677,110, 5,599,650, 5,677,108, and 5,997,993. The overcoat is introduced to, for example, reduce physical damage or contamination to the photosensitive layer during handling, improve photospeed, curing efficiency, and curing consistence by reducing oxygen inhibition (for free radical polymerizable photosensitive layer), improve humidity stability, and/or improve on-press developability (for on-press developable plate).
The photosensitive layer is generally coated onto a smooth or grained substrate at sufficient thickness to form a flat, smooth surface. For plates with an overcoat, the overcoat is generally coated to form a flat, smooth surface. While plates with a flat, smooth surface are very useful, they often suffer from the problem that the photosensitive layer surface tends to block to the back of another plate at extreme environmental condition, such as high temperature, high pressure, and high humidity. Also, such a plate can suffer from tackiness or fingerprinting when the photosensitive layer or the overcoat is a semisolid material, is formulated with higher content of liquid components, or is moisture sensitive (at higher humidity). Therefore, there is a desire for a lithographic plate that has excellent block resistance, non-tackiness, and fingerprinting resistance, in addition to on-press developability (for on-press developable plate) and press durability.
I have found that a lithographic plate comprising on a roughened substrate a substantially conformally coated photosensitive layer and a substantially conformally coated overcoat can provide no or low tackiness and excellent block resistance, while allowing excellent press durability. For on-press developable lithographic plate, such a photosensitive layer configuration also allows excellent on-press developability. The photosensitive layer is substantially conformally coated on the roughened substrate surface and the overcoat is substantially conformally coated on the photosensitive layer in a way so that the surface of the overcoat has peaks and valleys substantially corresponding to the major peaks and valleys of the substrate microscopic surface. It is very surprising that such a plate surface gives very low tackiness and excellent block resistance even with a semisolid photosensitive layer and/or semisolid overcoat which is very tacky and has poor block resistance when coated to form a smooth surface.
It is an object of the present invention to provide a lithographic printing plate with no or low tackiness and good block resistance while maintaining excellent press performance.
It is another object of the present invention to provide a lithographic plate having a semisolid photosensitive layer and/or overcoat with no or low tackiness and good block resistance.
It is another object of the present invention to provide a lithographic plate comprising on a roughened substrate a substantially conformally coated photosensitive layer and a substantially conformally coated overcoat in order to achieve reduced tackiness or good block resistance, while allowing excellent press durability.
It is another object of the present invention to provide an on-press developable lithographic plate having on a roughened substrate a conformal photosensitive layer and a conformal overcoat.
Further objects, features and advantages of the present invention will become apparent from the detailed description of the preferred embodiments.
According to the present invention, there has been provided a lithographic printing plate, comprising in order:
(a) a substrate with roughened surface comprising, at least, peaks and valleys;
(b) a photosensitive layer capable of hardening or solubilization upon exposure to an actinic radiation and exhibiting an affinity or aversion substantially opposite to the affinity or aversion of said substrate to at least one printing liquid selected from the group consisting of ink and an abhesive fluid for ink; and
(c) an overcoat;
(d) wherein said photosensitive layer is substantially conformally coated on the substrate surface and said overcoat is substantially conformally coated on the photosensitive layer surface, so that the surface of said overcoat has peaks and valleys substantially corresponding to the major peaks and valleys of the substrate microscopic surface.
According to another aspect of the present invention, there has been provided a method of lithographically printing images on a receiving medium, comprising in order:
(a) providing a lithographic printing plate comprising: (i) a substrate with roughened surface comprising, at least, peaks and valleys; (ii) a photosensitive layer capable of hardening or solubilization upon exposure to an actinic radiation and exhibiting an affinity or aversion substantially opposite to the affinity or aversion of said substrate to at least one printing liquid selected from the group consisting of ink and an abhesive fluid for ink, the non-hardened or solubilized areas of said photosensitive layer being soluble or dispersible in ink (for waterless plate) or in ink and/or fountain solution (for wet plate); and (iii) an ink and/or fountain solution soluble or dispersible overcoat; wherein said photosensitive layer is substantially conformally coated on the substrate surface and said overcoat is substantially conformally coated on the photosensitive layer surface, so that the surface of said overcoat has peaks and valleys substantially corresponding to the major peaks and valleys of the substrate microscopic surface;
(b) imagewise exposing the plate with an actinic radiation to cause hardening or solubilization of the exposed areas; and
(c) contacting said exposed plate with ink (for waterless plate), or with ink and/or fountain solution (for wet plate) on a printing press to remove the overcoat and the non-hardened or solubilized areas of the photosensitive layer, and to lithographically print images from said plate to the receiving medium.
The plate can be sensitive to an ultraviolet, visible, or infrared radiation. It can be exposed with an actinic radiation through a photomask or by direct exposure according to digital imaging information. For direct exposure, a laser (including infrared, visible or ultraviolet laser) is a preferred radiation source.
For on-press developable plate, the plate can be imaged off press and then mounted on press for on-press development with ink and/or fountain solution and lithographic printing. Alternatively, the plate can be imagewise exposed with a laser while mounted on a plate cylinder of a lithographic press, on-press developed on the same plate cylinder with ink and/or fountain solution, and then directly print images to the receiving sheets.

Lithographic plate having conformal overcoat and photosensitive layer on a rough substrate


An air conditioning control system includes a plurality of remote control terminals and a server. The plurality of remote control terminals each calculates a time required for a user of the remote control terminal to return to a building from outside the building, and transmits information indicating the time required to the server. The server calculates an estimated time when a user who returns to the building first among the plurality of users returns to the building on the basis of the time required, and transmits a command for changing air conditioning setting to an air conditioner in stages from a time when the estimated time is calculated to the estimated time calculated.

An air conditioning control system that controls an air conditioner by using information indicating a position of a terminal device is known (see, for example, Patent Literature 1). A conventional air conditioning control system includes a terminal device, a wearable terminal, and an air conditioner that performs air conditioning under the control of the terminal device. The terminal device includes a function of remotely controlling the air conditioner and a function of detecting a position of the terminal device. The wearable terminal includes a function of detecting temperature around a user.


A transmission control apparatus of the present invention includes a reliable service unit for providing reliable peer-to-peer data communication at layer 2 of a TCP/IP stack, and a setup unit for setting the reliable service unit. The reliable service unit includes a fragmentation part for fragmenting a service data unit (SDU) from an upper layer into protocol data units (PDUs) of a predetermined length, a sending buffer for temporarily storing the PDUs from the fragmentation part, a receiving buffer for temporarily storing PDUs received through a communication channel, a reassemble part for assembling the PDUs stored in the receiving buffer to a SDU of the upper layer, a poller for controlling data transmission/reception by checking network conditions, and a control unit for controlling at least one of the fragmentation part, sending buffer, receiving buffer, reassemble part, and poller. A transmission control method of the present invention includes initializing reliable peer-to-peer data communication at layer 2 of a TCP/IP stack, registering ports of the transmission control apparatus and devices to be connected to the ports, determining whether there is an upper layer SDU to be sent, transmitting the upper layer SDU, determining whether there are lower layer PDUs to be received when no upper layer SDU exists to be transmitted, and receiving the lower layer PDU if there are lower layer PDUs to be received.

1. Field of the Invention
The present invention relates to a transmission control protocol/internet protocol (TCP/IP), and in particular to a transmission control apparatus and method employed to a data link layer of a TCP/IP suite.
2. Background of the Related Art
The Internet protocols are the most popular open network protocol suite because they can be used to communicate across any set of interconnected networks and are well suited for LAN and WAN communications. The Internet protocols consist of a suite of communication protocols, of which the two best known are the Transmission Control Protocol (TCP) and the Internet Protocol (IP).
IP is a network layer (layer 3 of the 081 reference model) protocol that contains addressing information and some control information that enables packets to be routed. Also, IP provides connectionless and best-effort delivery of packets through an internetwork, and provides fragmentation and reassembly of the packets to support data links.
TCP is a transport layer (layer 4 of the 081 reference model) protocol that provides reliable transmission of data in an IP environment. More specifically, TCP offers reliability by providing connection-oriented, end-to-end reliable packet delivery through an internetwork and offers efficient flow control, which means that when sending acknowledgments back to the source, the receiving TCP process indicates the highest sequence number it can receive without overflowing its internal buffers.
In the TCP/IP model, however, functions of the network access layer at the bottom of the protocol TCP/IP stack corresponding the data link (layer 2) and physical layers (layer 1) of the OSI reference model are not specified, such that it is difficult to expect reliable transfer of data across physical media.

Transmission control apparatus and method for TCP/IP suite


A doubled sided suction nozzle having both a brush function and a duster function is disclosed. The doubled sided suction nozzle includes a nozzle body having an air inlet to draw in air, at least one brush unit rotatably disposed on a first surface of the nozzle body to come in surface contact with a surface to be cleaned thus to brush away dirt from the surface to be cleaned, at least one duster unit rotatably disposed on the second surface of the nozzle body to come in surface contact with the surface to be cleaned thus to wipe off the dust or dirt from the surface to be cleaned, and a rotating unit disposed in the nozzle body to rotate the brush unit and the duster unit.

1. Field of the Invention
The present disclosure relates to a vacuum cleaner. More particularly, the present disclosure relates to a suction nozzle for use in a vacuum cleaner having a brush function, which brushes away dirt, such as dust or the like, from a surface to be cleaned, and a duster function, which wipes off dirt, such as stain or the like, from the surface to be cleaned.
2. Description of the Related Art
Generally, a vacuum cleaner draws in dirt from a surface to be cleaned thus to clean the surface to be cleaned by using a suction force generated by a suction motor. Such a vacuum cleaner is provided with a suction nozzle, which draws in the dirt from the surface to be cleaned when it moves while coming in contact with the surface to be cleaned. The suction nozzle usually has an air inlet to draw in the dirt adhered to the surface to be cleaned, and a fixed brush or a rotatable brush disposed adjacent the air inlet to brush off the dirt adhered to the surface to be cleaned.
However, such a conventional suction nozzle is advantageous in that it is effective to brush off and draw in dry dirt, such as dust or the like, adhered to a surface to be cleaned, such as a carpet or the like, but disadvantageous in that it is difficult to remove fixed dirt, such as stain, grime or the like, or wet dirt, such as liquid or the like, adhered to a slippery surface to be cleaned, such as a floor or the like.
To address the problems as described above, besides a main suction nozzle, the conventional vacuum cleaner provides an accessory suction nozzle, which is selectively mounted to a hose or an extended tube to perform only a duster action. However, in this case, there is a problem in that a user should selectively replace one of the main suction nozzle and the accessory suction nozzle with the other according to the kind or the condition of the surface to be cleaned.
To address the problem, a double sided brush assembly, which a pair of roller brushes for use in a carpet and a pair of roller brushes for use in a floor are mounted on upper and lower surfaces thereof to selectively clean the carpet or the floor without exchanging the brush assemblies in cleaning, is disclosed in Korean utility model No. 1995-10069. However, the double sided brush assembly presents a problem that since the two pairs of roller brushes having certain diameters are arranged on upper and lower surfaces, respectively, the entire volume thereof is enlarged. Also, when the brush assembly moves back and forth, the roller brushes rotate along the surface to be cleaned while coming in line contact therewith. Thus, the double sided brush assembly presents a problem that even though the roller brushes for use in the floor, which can clean the slippery surface to be cleaned, such as the floor or the like, are used, they do not completely remove the dirt, such as the stain, the grime or the like, firmly adhered to the surface to be cleaned therefrom.

Double sided suction nozzle for use in vacuum cleaner


In accordance with the present invention, there are provided methods for estimating the level of interferers and the level of a useful signal in a spectral window of a given bandwidth in a communications channel in a complex multipath propagation environment. The first method of estimating the level of interferers comprises generating and transmitting several sets of sine waves on the Nyquist frequency. Each set is characterized by a certain phase so that the sequence of phase values evenly spans the interval (0, 2π) radians. The second method comprises generating and transmitting several sets of sine waves of the same phase, with frequencies evenly spanning a vicinity of the Nyquist frequency. The method of estimating the level of a useful signal comprises transmitting several repetitions of the signal used for actual data transmission and processing it by the receiving station.

It is recognized in digital communications that a precise knowledge of the parameters characterizing the quality of a communications channel is extremely important for efficient data transmission. This is related to the classical Shannon result stating that the data rate of a communications channel is a function of the signal-to-noise ratio (SNR). For a given signal, the increase in the noise level affects the quality of transmission adversely. The amount of information that can be reliably transmitted over a communications channel decreases as the noise increases.
The precise knowledge of the SNR of a channel dictates how much information will be ultimately transmitted. If one underestimates the SNR, the channel efficiency drops compared to the most efficient transmission mode. If one overestimates the SNR then more data is transmitted but the information is unreliable. Therefore, it is extremely important to be able to estimate the SNR of a communications channel in a precise and timely manner.
This is even more important in modern wireless communications that meet new challenges with respect to increasingly complex propagation environments. Typical examples of such environments would be urban areas, office buildings, military vessels, war zones, jungles, rock concerts etc. Some of these environments are characterized by severe multipath effects, others by strong fading, and others by both. When a communication session between two stations is initiated in such an environment, the SNR should be measured on both ends of the channel as precisely as possible and further communications over this channel are stipulated by the SNR value measured.
The present application is related to U.S. Patent Disclosure No. 547174, titled "Method and Apparatus for Determining the Quality of a Communications Channel in Complex Propagation Environments", invented by Vlad Mitlin, filed on Feb. 18, 2004, and owned by the same assignee now and at the time of the invention.

Method for determining the quality of a communication channel


A system can comprise a memory to store machine readable instructions and a processing unit to access the memory and execute the machine readable instructions. The machine readable instructions can comprise a feature set extractor to extract a feature set from each of a plurality of digital images of print samples. The feature set can be a filtered feature set that includes a feature set characterizing a printer that printed a given print sample of the print samples. The machine readable instructions can also comprise a cluster component to determine clusters of the print samples based on the feature set of each of the plurality of scanned images of the print samples. The machine readable instructions can further comprise a printer identifier to identify the printer of the print samples based on the clusters of the print samples.

A printer is a peripheral that produces a text and/or graphics of documents stored in electronic form on physical print media such as paper or transparencies. Printers can print images by printing a halftone. A halftone is the reprographic technique that simulates continuous tone imagery through the use of dots, varying either in size, in shape or in spacing. "Halftone" can also be used to refer specifically to the image that is produced by this process.

Hewlett-Packard Development Company, L.P.


A method may comprise introducing a first traceable solid particulate into a first formation zone of one or more subterranean formations, wherein the first traceable solid particulate may comprise a first soluble tracer coated onto a first solid particulate. The method may also comprise introducing a second traceable solid particulate into a second formation zone of the one or more subterranean formations, wherein the second traceable solid particulate may comprise a second soluble tracer coated onto a second solid particulate, wherein the second tracer and the first tracer may have a different chemical identity. The method may further comprise recovering produced fluid from the one or more subterranean formations and monitoring concentrations of at least the first soluble tracer and the second soluble tracer in the produced fluid.

In the treatment of subterranean formations, it is common to place particulate materials as a filter medium and/or a solid particulate in the near well bore area and in fractures extending outwardly from the well bore. In fracturing operations, solid particulate is carried into fractures created when hydraulic pressure is applied to these subterranean rock formations to a point where fractures are developed. Solid particulate suspended in a fracturing fluid may be carried outwardly away from the well bore within the fractures as they are created and extended with continued pumping. Upon release of pumping pressure, the solid particulate may remain in the fractures holding the separated rock faces in an open position forming a channel for flow of formation fluids back to the well bore.
The wellbore may penetrate a subterranean formation or multiple subterranean formations each of which may contain a reservoir where hydrocarbons may be produced from. In some examples, a wellbore may penetrate multiple reservoirs or zones. Hydraulic fracturing treatments may be applied to these zones to enhance the production of reservoir fluids such as oil, gas, and water from the zones. In some examples where the wellbore penetrates multiple zones, production fluids may be produced concurrently resulting in comingling of the production fluids in the wellbore. After the well has been completed and production of formation fluids begin, there may be a need to monitor the produced fluids, and more particularly, to monitor which zone the formation fluids are produced from to determine if additional treatments or workover applications need to be applied to the zone. There may be unique challenges in monitoring production from zones in offshore applications as oftentimes there may be complex tiebacks and comingling of production lines from multiple wellbores which may further complicate independent monitoring of producing zones. Oftentimes production must be shut down and a logging operation performed on an offshore well to determine which zones are producing fluids. Although land-based operations may present fewer complex challenges to production monitoring as compared to offshore applications, the production still may be shut down to perform a logging operation leading to downtime and increased costs.

Tracking production of oil, gas, and water from subterranean formation by adding soluble tracers coated onto solid particulate


A splash guard assembly for an over the highway vehicle and a kit for making the assembly are disclosed. The assembly includes a contoured splash guard and an intermediate mounting element for positioning between the splash guard and a vehicle side panel. The guard and the element are complementally contoured to fit together. The element is also contoured to fit a specific vehicle panel adjacent a wheel well of a vehicle having such panel. When assembled the element and panel are interconnected to enable mounting of the guard. Fasteners securing the element and guard together and the element to the panel.

Vehicle splash guards, sometimes referred to as mud flaps, have been used on automobiles for many years. Historically, splash guards were products purchased in the after market and mounted by auto owners on their vehicles. While splash guards are intended to reduce spray to following vehicles but, at least with automobiles, they are often purchased and installed to protect the finish and undercarriage of the vehicle on which they are mounted.
In recent years, manufacturers have supplied customized splash guards which are specifically contoured and designed to fit specific vehicles. After market suppliers manufacturers responded by producing splash guards which gave the appearance of being customized as taught and claimed in U.S. Pat. No. 4,709,938 issued Dec. 1, 1987 to Douglas K. Ward et al.
Vehicle manufacturers strive to reduce fuel consumption so that vehicles can be economically operated. Reductions in the weight of vehicles have contributed significantly to the improvement in economical operations. Many of the weight reductions have been achieved by substituting plastic materials for metal, most notably steel. At least one model vehicle to be introduced to the market presently has side panels which are molded from plastic material which is superior to steel at least from the stand point of resistance to corrosion and reduced weight.
A disadvantage of the plastic panels is that at least those portions of the side panel immediately adjacent the rear wheel well do not have sufficient rigidity and flange width for satisfactory mounting of a splash guard by conventional techniques. As a consequence there is a need for a splash guard assembly which has a structure which provides reinforcement of a side panel thereby making the mounting of a splash guard on a panel defined wheel well both possible and attractive.


A windshield wiper system and method comprising a controller which cooperates with a single sensor positioned in fixed relationship to a target situated on an armature of a drive motor which is driven in response to the controller. The wiper motor is a reversing wiper motor and changes direction in response to a change of polarity of drive signal generated by controller. An interrupt is situated on a drive train driven by the armature of the wiper motor and moves in correlation to the movement of a wiper blade. The sensor generates a pulse train associated with the movement of the wiper blade, and this pulse train gets interrupted by the interrupt when the wiper blade reaches a reversing position, such as an inwipe or an outwipe position. The interruption thereby gives controller an indication of when to reverse the polarity of the drive signal used to drive the wiper motor. The controller also uses the polarity of the drive signal to determine direction and, when used in combination with the sensor signal pulse train, to determine the velocity and position of the wiper blade. This, in turn, enables controller to control the velocity and direction of the wiper blades.

In the past, many approaches have been utilized to drive wiper blades. One such approach is to use a reversing wiper motor which is coupled directly to a wiper blade arm which moves a wiper blade across a windshield surface.
In a typical reversing wiper motor of the past, control electronics are in need of position feedback in order to be able to energize the wiper motor to reverse directions so that a wiper blade will change directions at the end of a stroke which generally corresponds to an either inwipe position or an outwipe position. Also, real time wiper velocity and position were monitored in order to prevent two overlapping blades from colliding.
Typically, multiple sensor components were needed to provide the wiper blade position direction and velocity.
What is needed, therefore, is a simple system and method which can provide all necessary information required, yet which is simple in design and which utilizes a small number of components, thereby saving costs of manufacture, assembly and the like.


A lateral high-breakdown-voltage transistor comprises an nxe2x88x92 drain region and an n+ source region formed in a pxe2x88x92 silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substrate, an n+ drain contact region formed in the drain region, drain wiring electrically connected to the drain region via the drain contact region, a p+ substrate contact region formed in contact with the source region, and source wiring electrically connected to the source region and also connected to the semiconductor layer via the substrate contact region. The transistor is characterized in that the substrate contact regions have respective portions made to be in contact with the source wiring, and accordingly laterally extend from inside the contact surface of the source wiring to outside the contact surface.

This application is based upon and claims the benefit of priority from the prior Japanese Patent Applications No. 11-371568, filed Dec. 27, 1999; and No. 2000-205070, filed Jul. 6, 2000, the entire contents of which are incorporated herein by reference.
This invention relates to a lateral high-breakdown-voltage transistor.
The lateral high-breakdown-voltage MOS transistor is a type of a power MOS transistor, which is switched on when a voltage ranging from several tens to several hundreds volts is applied thereto.
FIG. 13A is an enlarged plan view illustrating part of the planar pattern of a conventional lateral high-breakdown-voltage MOS transistor. FIG. 13B is a sectional view taken along line 13Bxe2x80x9413B of FIG. 13A. In FIG. 13A, the gate electrode of the transistor is omitted.
As shown in FIGS. 13A and 13B, a low-concentration nxe2x88x92 drain region 102 is formed in a low-concentration pxe2x88x92 silicon substrate 101, and a high-concentration n+ source region 103 is formed therein, separated from the drain region 102. A gate electrode 105 is formed on that portion of the substrate 101, which is located between the drain and source regions 102 and 103, i.e. on a channel 104, such that the electrode 105 is electrically isolated from the substrate 101.
An n+ drain contact region 106 having a higher impurity concentration than the drain region 102 is formed in the drain region 102. The drain contact region 106 is sufficiently separated from the channel 104 by means of a field insulating film 108 formed on the substrate 101. The field insulating film 108 is made of, for example, silicon dioxide, and formed by the LOCOS (Local Oxidation of Silicon) technique, or STI (Shallow Trench Isolation) technique, etc. Further, high-concentration p+ substrate contact regions 107 are formed in the substrate 101 in contact with the source region 103.
An interlayer insulating film 109 made of, for example, silicon dioxide is formed on the field insulating film 108 and on those portions of the substrate 101, in which the aforementioned semiconductor regions are formed. The interlayer insulating film 109 has a contact hole 110 that exposes the drain contact region 106 therethrough, and a contact hole 111 that exposes the source region 103 and the substrate contact regions 107 therethrough. Drain wiring 112 is provided on the interlayer insulating film 109 such that it comes into contact with the drain contact region 106 via the contact hole 110. Similarly, source wiring 113 is provided on the interlayer insulating film 109 such that it comes into contact with the source region 103 and the substrate contact regions 107 via the contact hole 111. The drain wiring 112 is electrically connected to the drain region 102 via the drain contact region 106. In FIG. 13A, reference numeral 116 denotes a contact surface between the drain wiring 112 and the drain contact region 106. The source wiring 113 is electrically connected to the source region 103, and also to the substrate 101 via the substrate contact regions 107. Further, in FIG. 13A reference numeral 115 denotes a contact surface between the source wiring 113 and the source region 103, the substrate contact regions 107.
Since, in the lateral high-breakdown-voltage MOS transistor, the drain and source regions 102 and 103 exist at the same level as shown in FIG. 13A, a lateral parasitic bipolar transistor exists which uses the drain region 102, the substrate 101 and the source region 103 as a collector, a base and an emitter, respectively. When the lateral parasitic bipolar transistor is turned on, it adversely affects the operation of the MOS transistor. The lateral parasitic bipolar transistor is turned on, for example, in the following situation.
When the gate is turned on and the voltage at the drain is increased, avalanche breakdown starts at a curved surface 114 of the drain contact region 106, whereby a hole current flows toward the substrate 101. This hole current flows below the source region 103 to the substrate contact regions 107, and then, usually, to the source wiring 113 via substrate contact regions 107.
When the voltage at the drain is further increased, the level of the avalanche breakdown increases to thereby increase the hole current. As the hole current increases, a high voltage is generated due to the resistance of a portion of the substrate 101 below the source region 103. Accordingly, forwardly biasing of the PN junction between the substrate 101 and the source region 103 occurs, thereby turning on the lateral parasitic bipolar transistor. When the lateral parasitic bipolar transistor is turned on, control using the gate cannot be executed, resulting in breakdown of the lateral high-breakdown-voltage MOS transistor.
The present invention has been developed to solve the above-described problem, and aims to provide a lateral high-breakdown-voltage transistor capable of suppressing turn-on of a lateral parasitic bipolar transistor and hence having a higher breakdown voltage.
According to a first aspect of the invention, there is provided a semiconductor device having a lateral high-breakdown-voltage transistor comprising: a first-conductivity-type semiconductor layer; a second-conductivity-type source region formed in the semiconductor layer; a second-conductivity-type drain region formed in or outside the semiconductor layer, separated from the source region; a gate electrode formed above the semiconductor layer between the drain region and the source region, insulated from the semiconductor layer; a second-conductivity-type drain contact region formed in the drain region and having a higher impurity concentration than the drain region; a drain wiring electrically connected to the drain region via the drain contact region; a first-conductivity-type substrate contact region formed adjacent to the source region; and a source wiring electrically connected to the source region, and also connected to the semiconductor layer via the substrate contact region. This transistor is characterized in that the source wiring touches a portion of the source region and the substrate contact region, thereby forming a contact surface therebetween, and the substrate contact region laterally extend from inside the contact surface to outside the contact surface.
Since, in the semiconductor device having the lateral high-breakdown-voltage transistor according to the first aspect, the substrate contact region extend from inside the contact surface of the source wiring to outside the contact surface, the ratio of the contact area of the substrate contact regions and the source wiring to their non-contact area can be increased as compared with the conventional case. As a result, a hole current flowing in the semiconductor layer can easily flow to the source wiring, which makes it difficult to turn on the lateral parasitic bipolar transistor. This enables production of a lateral high-breakdown-voltage transistor of a higher breakdown voltage.
According to a semiconductor device having a second aspect of the invention, there is provided a lateral high-breakdown-voltage transistor comprising: a first-conductivity-type semiconductor layer; a second-conductivity-type source region formed in the semiconductor layer; a second-conductivity-type drain region formed in or outside the semiconductor layer, separated from the source region; a gate electrode formed above the semiconductor layer between the drain region and the source region, insulated from the semiconductor layer; a second-conductivity-type drain contact region formed in the drain region and having a higher impurity concentration than the drain region; a drain wiring electrically connected to the drain region via the drain contact region; a first-conductivity-type substrate contact region formed adjacent to the source region; and a source wiring electrically connected to the source region, and also connected to the semiconductor layer via the substrate contact region. This transistor is characterized by further comprising a first-conductivity-type low resistance layer, which is formed in the semiconductor layer in contact with a bottom of the source region and has a higher impurity concentration than the semiconductor layer.
Since, the semiconductor device having the lateral high-breakdown-voltage transistor according to the second aspect further comprises a first-conductivity-type low resistance layer formed in the semiconductor layer in contact with a bottom of the source region and having a higher impurity concentration than the semiconductor layer, the resistance of the device below the source region can be reduced as compared with the conventional case. As a result, a voltage that is generated when the hole current passes below the source region is reduced, thereby making it difficult to turn on the lateral parasitic bipolar transistor. This enables production of a lateral high-breakdown-voltage transistor of a higher breakdown voltage.
According to a third aspect of the invention, there is provided a semiconductor device having a lateral high-breakdown-voltage transistor comprising: a first-conductivity-type semiconductor layer; a second-conductivity-type source region formed in the semiconductor layer; a second-conductivity-type drain region formed in or outside the semiconductor layer, separated from the source region; a gate electrode formed above the semiconductor layer between the drain region and the source region, insulated from the semiconductor layer; a second-conductivity-type drain contact region formed in the drain region and having a higher impurity concentration than the drain region; a drain wiring electrically connected to the drain region via the drain contact region; a first-conductivity-type substrate contact region formed adjacent to the source region; and a source wiring electrically connected to the source region, and also connected to the semiconductor layer via the substrate contact region. This transistor is characterized in that a distance from a contact surface of the drain wiring and the drain contact region to an edge of the source region side of the drain contact region is 5 xcexcm or more.
In the semiconductor device having the lateral high-breakdown-voltage transistor according to the third aspect, the distance from the contact surface of the drain wiring and the drain contact region to the edge of the drain contact region is set at a value that causes a portion extending from the contact surface to the edge of the drain contact region to have a resistance of 10xcexa9. In other words, the distance from the contact surface of the drain wiring and the drain contact region to the edge of the drain contact region is set longer than in the conventional case. Accordingly, the level of the electric field applied to the edge of the drain contact region can be reduced as compared with the conventional case. Further, since the distance to the curved surface is longer than in the conventional case, avalanche breakdown, which concentrates on the curved surface in the conventional case, can be dispersed even to the bottom of the drain contact regions. The prevention of concentration of an electric field on the curved surface, and the dispersion of avalanche breakdown suppress the occurrence of strong avalanche breakdown. As a result, the hold current flowing in the semiconductor substrate is reduced, thereby making it difficult to turn on the lateral parasitic bipolar transistor. This enables production of a lateral high-breakdown-voltage transistor of a higher breakdown voltage.
According to a fourth aspect of the invention, there is provided a semiconductor device having a lateral high-breakdown-voltage transistor comprising: a first-conductivity-type semiconductor layer; a second-conductivity-type source region formed in the semiconductor layer; a second-conductivity-type drain region formed in or outside the semiconductor layer, separated from the source region; a gate electrode formed above the semiconductor layer between the drain region and the source region, insulated from the semiconductor layer; a second-conductivity-type drain contact region formed in the drain region and having a higher impurity concentration than the drain region; a drain wiring electrically connected to the drain region via the drain contact region; a first-conductivity-type substrate contact region formed adjacent to the source region; and a source wiring electrically connected to the source region, and also connected to the semiconductor layer via the substrate contact region. This transistor is characterized in that the drain contact region has a bottom at a level lower than a bottom of the drain region.
Since, in the semiconductor device having the lateral high-breakdown-voltage transistor according to the fourth aspect, the drain contact region reaches the semiconductor layer via the bottom of the drain region, the distance from the contact surface of the drain wiring and the drain contact region to the curved surface of the drain contact region is longer than in the conventional case. Accordingly, the level of the electric field applied to the curved surface can be reduced as compared with the conventional case, thereby reducing the level of avalanche breakdown that occurs at the curved surface. As a result, a hole current flowing in the substrate can easily flow to the source wiring, which makes it difficult to turn on the lateral parasitic bipolar transistor. This enables production of a lateral high-breakdown-voltage transistor of a higher breakdown voltage.
According to a fifth aspect of the invention, there is provided a semiconductor device having a lateral high-breakdown-voltage transistor comprising: a first-conductivity-type semiconductor substrate; a second-conductivity-type buried layer formed in the semiconductor substrate; a second-conductivity-type epitaxial layer formed on the buried layer; a first-conductivity-type well layer formed in a surface portion of the epitaxial layer; a second-conductivity-type source region formed in a surface portion of the well layer; a second-conductivity-type drain region formed in a surface portion of the epitaxial layer or the well layer, separated from the source region; a second-conductivity-type deep diffusion layer formed in the drain region but extending to a level lower than a bottom of the drain region in contact with the buried layer, and having a higher impurity concentration than the drain region; a gate electrode formed above the well layer between the drain region and the source region, insulated from the well layer; a first drain electrode formed on the deep diffusion layer and electrically connected to the drain region via the deep diffusion layer; a source electrode formed on and electrically connected to the source region; a second-conductivity-type isolating diffusion layer surrounding the drain region and the source region, separated from the well layer, and extending to the buried layer; and a second drain electrode formed on the isolating diffusion layer and electrically connected to the first drain electrode. This transistor is characterized in that a distance between the deep diffusion layer and the source region being greater than a thickness of the epitaxial layer on the buried layer.
In the semiconductor device having the lateral high-breakdown-voltage transistor according to the fifth aspect, a surge voltage, when it is applied thereto via the drain electrode, more easily flows in the direction of the thickness (i.e. in the vertical direction) than in the lateral direction. Accordingly, an electric field more concentrates in the vertical direction than in the lateral direction, thereby causing breakdown to occur in the buried layer. In other words, concentration of an electric field on the curved surface of the drain contact region reduces to thereby suppress breakdown in the lateral direction. As a result, concentration of an electric field is avoided, and hence the breakdown voltage of the transistor is enhanced. Moreover, since the deep diffusion layer is extended from the surface of the substrate in the drain region to the buried layer, a surge voltage, when it is applied to the drain electrode, is sufficiently absorbed therein, and therefore the adverse influence of the surge voltage is avoided. This being so, electric field concentration on the curved surface of the drain contact region is avoided, thereby increasing the breakdown voltage.
According to a sixth aspect of the invention, there is provided a semiconductor device having a lateral high-breakdown-voltage transistor comprising: a first-conductivity-type semiconductor substrate; a second-conductivity-type buried layer formed in the semiconductor substrate; a second-conductivity-type epitaxial layer formed on the buried layer; a first-conductivity-type well layer formed in a surface portion of the epitaxial layer; a second-conductivity-type source region formed in a surface portion of the well layer; a second-conductivity-type drain region formed in a surface portion of the well layer, separated from the source region; a second-conductivity-type drain contact region formed in a surface portion of the drain region and having a higher impurity concentration than the drain region; a gate electrode formed above the well layer between the drain region and the source region, insulated from the well layer; a first drain electrode formed on the drain contact region and electrically connected to the drain region via the drain contact region; a source electrode formed on and electrically connected to the source region; a second-conductivity-type isolating diffusion layer surrounding the well layer, separated from the well layer, and extending to the buried layer; and a second drain electrode formed on the isolating diffusion layer and electrically connected to the first drain electrode. This transistor is characterized in that a distance between the drain contact region and the source region being greater than a thickness of the epitaxial layer on the buried layer.
In the semiconductor device having the lateral high-breakdown-voltage transistor according to the sixth aspect, a surge voltage, when it is applied thereto via the drain electrode, more easily flows in the direction of the thickness (i.e. in the vertical direction) than in the lateral direction. Accordingly, an electric field more concentrates in the vertical direction than in the lateral direction, thereby causing breakdown to occur in the buried layer. In other words, concentration of an electric field on the curved surface of the drain contact region reduces to thereby suppress breakdown in the lateral direction. As a result, concentration of an electric field is avoided, and hence the breakdown voltage of the transistor is enhanced. Moreover, since, in the device, the drain region and the source region are formed in the well layer, the current path is prevented from extending to the epitaxial layer. Thus, the resistance of the element can be reduced.
As described above, the invention can provide a lateral high-breakdown-voltage transistor capable of suppressing the turn-on of the lateral parasitic bipolar transistor and hence having a higher breakdown voltage.
Additional objects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention may be realized and obtained by means of the instrumentalities and combinations particularly pointed out hereinafter.


A multihull hydrofoil watercraft incorporates a stabilization system wherein the buoyancy of the hulls is used as a sensing and control mechanism for the hydrofoils. The use of hull buoyancy to adjust the hydrofoil lift provides for automatic control of altitude, pitch and roll, and allows the craft to accommodate varying weather and sea conditions while providing a smooth ride for passengers. The stabilization technique eliminates the need for extraneous sensing mechanisms placed in or on the water surface which are subject to fouling, damage, or disruption by localized surface disturbances.

The development of the hydrofoil lifting device has the potential to greatly advance the performance of watercraft. Both powered and sail craft may benefit from the application of the hydrofoil device. These performance enhancements have been limited by difficulties associated with the hydrofoil control mechanisms. Previous applications of hydrofoils to sailcraft have also been limited in that the designs were effective only in high wind conditions.
For large powered watercraft, fully electronic control mechanisms have been developed to optimize performance and stability under varying weather and sea conditions. For smaller powered vessels, or for sail boats in particular, the power consumption, weight, and complexity of fully electronic control systems is not as practical. The present invention offers many of the advantages of an electronic control system with a much simpler design, suitable for use even in small power or sailboats.
Previous designs for hydrofoil craft have not fully addressed all the requirements for a control system that accommodates varying weather, sea, and load conditions. One such design (U.S. Pat. No. 6,578,507 to Bergmark) employs hydrofoil devices intended to counteract the heeling force of the wind against the sail. The design does not address altitude stabilization or automatically adjust for changing wind conditions or sail trim ("the wings may be actuated by means of control means that are accessible from the cockpit)".
In a similar U.S. patent (Baulard-Caugan U.S. Pat. No. 4,385,579) hydrofoil-like devices are linked to the mast to provide some means of compensating for wind variations. This design improves roll stabilization but does not exploit the lifting potential of the hydrofoils to reduce hull drag, nor does it attempt to control the altitude of the craft.
U.S. Pat. No. 3,762,353 (Shutt) is also designed primarily to counteract the heeling force exerted by the sail/mast. The hydrofoil's angle of attacked is controlled by a small float assembly linked to the main hull. This design does not exploit the lifting potential of the hr drofoil, and is also very susceptible to localized variations in wave height that could adversely affect stability.
The catamaran stabilization structure of U.S. Pat. No. 4,561,371 (Kelley et al) employs passive wing structures whose angle of attack is fixed and therefore do not adjust to accommodate changing conditions.
In U.S. Pat. No. 5,168,824 (Ketterman) the hydrofoil control mechanism also makes use of a small "canard" on the water surface near the foil. To reduce susceptibility to localized wave action, a flexible linkage absorbs higher-frequency variations in canard height. The rudder foil does not employ the canard control mechanism, and is therefore less effective in counteracting any pitching motion that may be induced by wind/wave interaction. The canard mechanisms on the lateral foils may also be susceptible to swamping by large waves which could destabilize the craft.
The present invention uses a foil control mechanism which addresses many of the problems of prior designs, while adding additional benefits. Rather than using localized float sensing mechanisms, the new design controls the foils based on the buoyancy along the entire length of two or more hulls. This method minimizes any disturbance from localized wave action and automatically compensates against heeling, pitch, and roll. The buoyancy provided by the hulls combines with the hydrodynamic force from the foils, so that performance is improved even for a sailcraft in low wind conditions.


A method and a control sequence determination device for the determination of a magnetic resonance system activation sequence including at least one high-frequency pulse sequence to be transmitted by a magnetic resonance system are provided. A current B0 map and optionally a target magnetization are acquired. In addition, a k-space trajectory type is determined. An error density is calculated in a k-space based on the current B0 map and optionally based on the target magnetization using an analytic function. This analytic function defines an error density in the k-space as a function of the current B0 map and optionally the target magnetization. Taking account of the error density in the k-space, a k-space trajectory of the specified k-space trajectory type is determined. The high-frequency pulse sequence is determined for the k-space trajectory in an HF pulse optimization process.

The present embodiments relate to a method and a control sequence determination device for the determination of a magnetic resonance system activation sequence.
In a magnetic resonance tomography system (e.g., magnetic resonance system), the body that is to be examined may be subjected to a relatively high main magnetic field (e.g., the B0 field; 3 or 7 Tesla), with the aid of a main field magnetic system. In addition, a magnetic field gradient is applied with the aid of a gradient system. Using a high-frequency transmitter system, high-frequency excitation signals (HF signals) are emitted by suitable antenna devices, the intention of which is that the nuclear spins of specific atoms or molecules, excited to resonance by this high-frequency field, are tilted by a defined flip angle in relation to the magnetic field lines of the main magnetic field. This high-frequency excitation and, respectively, the resultant flip angle distribution are also designated hereinafter as nuclear magnetization or simply "magnetization". With the relaxation of the nuclear spin, high-frequency signals (e.g., magnetic resonance signals) are irradiated. The high-frequency signals are received by suitable reception antennae and then undergo further processing. From the raw data acquired in this way, the desired image data may be reconstructed. The transmission of the high-frequency signals (e.g., the B1-field) for the nuclear spin magnetization takes place by a "whole body coil" arranged permanently in the device around the measuring area (e.g., patient tunnel). Reception of the magnetic resonance signals takes place in most cases with the aid of local coils that are positioned more densely on the body of the patient. Reception of magnetic resonance signals may also be carried out with the whole body coil, and/or the transmission of the HF signals may be carried out with the local coils.
For a specific measurement, an activation sequence with a high-frequency pulse sequence to be transmitted, and a gradient pulse sequence that is to be switched in co-ordination with this (e.g., with suitable gradient pulses in the layer selection direction, in the phase coding direction, and in the read-out direction, frequently in the z-direction, y-direction, and z-direction), and further control specifications are defined in a measurement protocol. This measurement protocol may be established in advance and be called up for a specific measurement (e.g., from a memory) and, if appropriate, may be changed on site by the operator. During the measurement, the control of the magnetic resonance system may be carried out fully automatically on the basis of this activation sequence, where the control device of the magnetic resonance system reads out the commands from the measurement protocol and processes the commands.
For the generation of the activation sequence, in, for example, an optimization process, the individual HF pulse sequences (e.g., the HF trajectories) are determined for the individual transmission channels over time as a function of a fixed "k-space trajectory" that may be specified by a measurement protocol or individually by an operator. The "transmission k-space trajectory" (e.g., a "trajectory") relates to the locations in the k-space that are moved to by the adjustment of the individual gradients at specific times. The k-space is the spatial frequency space, and the trajectory in the k-space describes by which route the k-space will be run through temporally when an HF pulse is transmitted, by appropriate switching of the gradient pulses. By adjusting the k-space trajectory, at which spatial frequencies specific HF energy quantities will be deposited may be determined.
For the generation of the activation sequences in this situation, account may additionally be taken in the optimization process of currently measured B1-maps that, in each case, indicate the spatial B1 field distribution for a specific antenna element, and a B0 map that spatially resolves the off-resonances or represents the deviation of the B0 field from the homogeneous B0 field that is actually desired (e.g., the Larmor frequency that is actually being striven for). In addition, for the planning of the HF pulse sequence, the user may specify a target magnetization such as a desired flip angle distribution. With a suitable HF pulse optimization program, the suitable HF pulse sequence is calculated, such that the target magnetization is attained. This may involve the most homogeneous possible magnetization in the Field of View (FoV) that is to be examined, or, respectively, the Field of Excitation (FoE) that is to be excited.
With more recent methods, quite specific regions (e.g., two-dimensional) may be excited within a layer (e.g., a non-homogeneous target magnetization is deliberately striven for).
One possibility of determining a two-dimensional high-frequency pulse sequence (e.g., a "2DRF-Pulse") in the manner described heretofore is described in the article "Magnitude Least Square Optimization for Parallel Radio Frequency Excitation Design Demonstrated at 7 Tesla With Eight Channels" by K. Setsompop et al., Magn. Reson. Med. 59: 908 to 915, 2008. In this situation, the transversal target magnetization is represented in a linear matrix equation system from the spatial coil profiles and the multi-channel high-frequency pulse sequences, into which information is also introduced about the B0 maps and B1 maps present and the k-space trajectory used. This equation system is resolved numerically for a specific predetermined target magnetization in order to obtain the appropriate high-frequency pulse sequence.
In relation to the trajectories that may be used, however, with constant gradients that are used for a simple layer-selective excitation, such one-dimensional, two-dimensional, or multi-dimensional k-space trajectories for selective excitation exhibit a substantially greater complexity. Due to this greater complexity, there is also an increased risk of artifact formation in the images (e.g., because such pulses may be substantially longer). Complicated k-space trajectories of this type may therefore be determined within the framework of an optimization process automatically, taking account of specific stipulations (e.g., jointly with the HF pulse sequence).

This patent is subject to a terminal disclaimer.

Determination of a magnetic resonance system activation sequence


The present disclosure includes an electronic device for selecting a credential based at least in part on location information. The electronic device can include a secure transaction subsystem and a processor. The secure transaction subsystem can be configured to store a plurality of credentials. The processor can be communicatively coupled to the secure transaction subsystem and configured to receive the location information from one or more radios. Further, the processor can be configured to determine that a distance between the electronic device and a terminal is less than a predetermined distance based on the location information. In response to determining the distance between the electronic device and the terminal is less than the predetermined distance, the processor can be configured to select the credential from the plurality of credentials based at least in part on the type of terminal.

Electronic devices can include wireless capabilities to perform a variety of tasks such as wirelessly unlocking/locking a computer (or other device), wirelessly interacting with a television or other media device, and/or wirelessly conducting transactions. With respect to transactions, the wirelessly-enabled electronic device can store credentials corresponding to, for example, transit passes, identification, and credit/debit cards compatible with different payment types. For example, using a wireless communication protocol such as a near field communication (NFC) protocol, the electronic device can conduct a transaction with a nearby reader terminal using a stored credential that is compatible with the terminal.

Location-based credential selection for wireless transactions


Communications systems and methods with an evolved packet-switched core network architecture to enable voice services on second- and third-generation wireless access networks. The systems and methods permit unmodified 2G and 3G mobile devices to conduct voice calls using conventional circuit-switched user-plane and control-plane protocols at the air interface while the voice calls are switched at the back-end using a packet-switched core network. The system may include a translation module at a controller component that is configured to provide both user-plane and control-plane translation functions between an unmodified 2G/3G mobile device that utilizes circuit-switched protocols for a voice call and the packet-switched core network that utilizes packet-switched protocols to switch the voice call.

Third-Generation Partnership Project (3GPP) Long Term Evolution (LTE) is a new standard mobile network technology that uses only packet-switched (PS) protocols, including at the radio or air interface. It has been posited that the simplified architecture of LTE systems will reduce operating expenses for mobile service providers. Increasingly, mobile service providers are integrating LTE networks with pre-existing second-generation (2G) and third-generation (3G) networks that utilize a combination of circuit-switched (CS) and packet-switched protocols, such as Global System for Mobile Communications (GSM), General Packet Radio Service (GPRS), Enhanced Data Rates for GSM Evolution (EDGE), and Universal Mobile Telecommunications System (UMTS) networks. For example, both GSM and UMTS networks utilize circuit-switched protocols for voice services.
Mobile service providers may find it difficult to gracefully transition to LTE technologies because they must continue to support legacy 2G/3G hardware in which the service provider or its customers invested, even after new LTE infrastructure is deployed. For example, service providers will need to continue to support customers who have legacy 2G/3G mobile devices that are not capable of interacting with LTE radio access networks. Additionally, service providers may continue to maintain their 2G/3G radio access networks for some period of time before fully replacing them with LTE radio access networks, since these legacy networks represent a substantial prior capital investment.
In existing approaches, the legacy circuit-switched core network architecture must be maintained to support voice calls conducted using legacy 2G/3G mobile devices and 2G/3G radio access networks. Furthermore, the 3GPP has suggested that in order to interface LTE subsystems with 2G/3G subsystems, voice calls between a mobile device on an LTE subsystem and a mobile device on a 2G/3G subsystem should be circuit-switched by the circuit-switched core network of the 2G/3G subsystem. The suggested approach would require that mobile service providers indefinitely maintain two separate core networks: the legacy circuit-switched core network and a packet-switched core network. Maintaining two separate core networks leads to increased operating and capital expenses. Service providers could realize savings in their operating and capital expenses if 2G/3G circuit-switched core network hardware could be gracefully decommissioned.
One previous approach to eliminate a circuit-switched core network is described in U.S. Patent Application Publication No. 2004/0029615, titled "Transmission of Voice Over Packet-Switched Systems," PCT No. PCT/EP01/11164, filed Sep. 10, 2001, the entirety of which is incorporated herein by reference. In the previous approach, transmission of voice over Internet Protocol (IP) is performed in a UMTS system by using a hybrid mode of attach where the speech bearer path from the mobile device is transported to the network controller in circuit-switched mode and from there onwards in packet-switched mode. The control signaling from the mobile device is sent over IP to the core network. Unfortunately, in the previous approach, the mobile device must be capable of generating and interpreting session initiation protocol (SIP) signaling messages, e.g., via an installed SIP architecture or application. Thus, unmodified 2G/3G mobile devices that do not include a SIP application may not utilize the previous approach.

Packet-switched core network architecture for voice services on second- and third-generation wireless access networks


A method for forming a nanocomposite material includes introducing a nanofiller material having polar end groups into an extruder having a polymeric material therein. An unsaturated shielding material is introduced into the extruder. The unsaturated shielding material reacts with the polar end groups, thereby forming a shielded nanofiller material. The shielded nanofiller material is grafted to the polymeric material, thereby forming the nanocomposite material. The nanofiller material therein is substantially exfoliated, and the nanocomposite material exhibits enhanced physical properties.

Nanotechnology can be defined as materials or devices engineered at the molecular level. Within this category are polymer nanocomposites, which are a class of materials that use molecular sized particles for reinforcing the polymer matrix, e.g., the reinforcing filler possesses one or more dimensions on a sub-micrometer scale. These materials blend a nanofiller with a polymer to produce a composite with equal or better physical and mechanical properties than their conventionally filled counterparts but at lower filler loadings.
Due to the surface area available with nanofillers, polymer nanocomposites offer the potential for enhanced mechanical properties, barrier properties, thermal properties, and flame retardant properties when compared to conventionally filled materials.
One class of polymer nanocomposites uses a nanofiller material that is based on the smectite class of aluminum silicate clays, a common representative of which is montmorillonite. Although naturally occurring and synthetic variations of this basic mineral structure can be used to make nanocomposites, the structure should allow the exchange of interlayer inorganic cations, such as Na+ or Ca2+, with organic cations, such as alkylammonium cations, if property enhancements are to be achieved. The silicate platelets consist of a central octahedral aluminate structure surrounded on either side with a tetrahedral silicate structure. Iron or magnesium occasionally replaces an aluminum atom, rendering an overall negative charge. This charge is counterbalanced by the inorganic cations which reside between the sheets, holding them loosely together. The exchange of interlayer inorganic cations with organic cations increases the spacing between the silicate sheets, as well as improves the compatibility of the filler and the resin system, thereby facilitating exfoliation.
When exfoliated properly, these layered silicates have size dimensions approximately 1 nm thick by about 50 to 2000 nm long. This leads to aspect ratios on the order of about 50 to 2000. This value is quite high compared to the aspect ratio of conventional fillers such as talc (aspect ratio ˜1) and glass fibers (aspect ratio ˜20). Due, at least in part, to this high aspect ratio, there is the potential to obtain properties equal to or greater than conventionally filled materials but at much lower filler loadings, for example, between about 2% and about 5%. Conventionally filled materials require about 20% to 30% loadings to achieve equivalent property enhancement.
For optimum reinforcement properties, not only is good exfoliation desirable, but also good distribution of the silicate layers throughout the resin, and good compatibility between the polymer resin and the filler.
Exfoliation of the nanofiller reinforces the resins which results in enhanced physical and mechanical properties. Traditional processes use external compatibilizers to make the nanofiller less polar and increase its miscibility with non-polar olefinic resins. However, one of the drawbacks of current nanocomposite materials is a potential lack of development of a high degree of exfoliation (dispersion) of the nanofiller material.

Method for forming nanocomposite materials