A snowboard rider wears boots that fit into manually releasable bindings which are attached to the top surface of the snowboard, analogous to bindings on alpine skis. Generally, the snowboard bindings are aligned at approximately right angles to the longitudinal axis of the board, with one foot nearer to the front of the board, and the other foot nearer to the tail of the board. In a typical binding design, each boot is rigidly held in a fixed position with respect to the snowboard with no movement of the foot being possible absent corresponding movement of the snowboard. The snowboard binding described herein permits the rider to enjoy the flexibility of toe-to-heel movement, while providing for a simple method of restraining that method for terrains in which flexibility would be detrimental. Each binding consists of a footplate onto which the boot is strapped, a fulcrum attached to the bottom of the footplate, and a fulcrum receptacle mounted on top of the snowboard. When the fulcrum is a rigid half circle with the flat edge attached to the bottom of the footplate, a fulcrum pin is inserted through the fulcrum receptacle and through a hole formed in the fulcrum to hold the fulcrum in place with respect to the snowboard, while allowing toe-to-heel motion around the axis of the fulcrum. A separate locking pin may be removably inserted into a locking pin receptacle mounted on the bottom of the footplate and through an adjacent hole formed in the fulcrum receptacle to inhibit vertical flexibility of the footplate when desired.

1.1 Related Filings
This application is related to Document Disclosure 409711 filed on Dec. 20, 1996.
1.2 Technical Field
This invention pertains to a specialized binding for snowboards and similar sports equipment which allows for flexibility in toe-to-heel movement as a rider maneuvers the board.
1.3 Background Art
In a number of relatively new sports, both of the participant's feet are affixed to the same gliding board. While this configuration includes a number of different boards, including snowboards, monoskis, and wakeboards, the term "snowboard" will be used throughout this specification, it being understood that the invention claimed herein may apply to any such gliding board.
The snowboard rider wears boots that fit into manually releasable bindings which are attached to the top surface of the snowboard, analogous to bindings on alpine skis. Generally, the snowboard bindings are aligned at approximately right angles to the longitudinal axis of the board, with one foot nearer to the front of the board, and the other foot nearer to the tail of the board.
As snowboarding has become a popular alpine sport, a variety of different binding designs have been developed. For example, U.S. Pat. No. 5,143,396 to Shaanan et al., U.S. Pat. No. 5,172,924 to Barci, U.S. Pat. No. 5,480,176 to Sims, and U.S. Pat. No. 5,409,244 to Young each describe specialized bindings for snowboards. While the boot mounts directly on the snowboard in Sims and Young, many snowboard binding designs include a separate footplate mounted between the snowboard and the boot. U.S. Pat. No. 5,520,406 to Anderson et al. specially designs the footplate to avoid cavities that can accumulate ice and snow.
Innovative snowboard bindings have been designed to accommodate special problems associated with snowboarding. For example, because both feet are mounted on one board, when the rider looses his balance to such an extent that one boot disengages from the board, extreme stress results to the leg which remains bound to the board, possibly causing serious injury to bones or ligaments. To remedy this concern, a variety of binding designs have been created, each providing for the second boot to be automatically released when a first boot disengages. U.S. Pat. Nos. 5,054,807 to Fauvet, 5,564,719 to Kissel, and 5,085,455 to Bogner et al. are each examples of such designs.
Another known problem for snowboarders is the need to disengage one boot and use that foot to push the snowboard in an uphill setting, such as to get to and from a ski lift. To accommodate this need, snowboard bindings have been developed that allow for ease of entering into and disengaging one boot binding, such as U.S. Pat. No. 5,558,355 to Henry. U.S. Pat. No. 5,499,837 to Hale et al. further alleviates problems associated with pushing the snowboard with only one boot attached to the board by permitting easy rotation of the binding so that the boot remaining in the snowboard can be faced toward the front of the snowboard. Another novel approach to this issue is taught in U.S. Pat. No. 5,090,722 to Ritchie et al., providing for a temporary foot-gripping device between the two boot bindings.
While snowboard bindings are typically aligned at an angle to the longitudinal axis to the board, many of such bindings are in a fixed position. Thus, once such bindings have been attached to the board, the user has no method of adjusting the alignment even if a different orientation would be better suited to this user's style of maneuvering the board. To provide for more flexibility in aligning bindings, a number of specialized bindings have been developed, which allow for movement of the bindings to different orientations with respect to the longitudinal axis of the board, and then provide for locking the binding in its new position. Examples of such bindings are found in U.S. Pat. Nos. 5,028,068 to Donovan and 5,236,216 to Ratzek. Similarly, a binding advertised on the internet at http://www.murrays.com/snow/excel.sub.-- snow/excel.html, known as "Excel Rotational Bindings", permits the user to adjust the back of the binding to a chosen angle, and to fasten the binding at that chosen angle.
As snowboarders increase in sophistication and skill, they frequently seek more flexibility in their board and bindings, to permit different types of turns and maneuvers. A binding with a double hinge mechanism is advertised on the internet at http://www.et.byu.edu/.about.mansure/skatestyle/work.html, which allows the rider to rotate his foot from side to side while riding the board. Similarly, U.S. Pat. No. 5,044,656 to Peyre describes a snowboard with a boardplate secured to the top of the snowboard, and a boot plate, connectable to the boot, with resilient tensioning devices connecting the two plates, to allow for movement in three directions within certain limits. An internet advertisement at http://ourworld.compuserve.com/homepages/bomber1/badsyste.htm describes a binding with elastomer bumpers between a footplate and the snowboard to cushion the rider and reduce vibrations.
While each of these bindings is useful for its intended purpose, none is suitable for providing flexibility in toe-to-heel movement as a rider maneuvers the board, while providing the rider with the ability to lock the boot and footplate in a fixed position when riding conditions make a rigid configuration preferable.


An aesthetically pleasing attachment for removeably mounting auxiliary lenses on standard styles of eyeglasses configurations eyeglasses, and that will securely retain the auxiliary lenses in desired position without obstructing or distorting the view of the wearer or damaging the lenses of the eyeglasses, includes a pair of auxiliary lenses attached to a bridge member, and at least one gripper member associated with each auxiliary lens adapted to engage a rear upper surface of the eyeglasses frame or lenses, at or near the connecting bridge of the eyeglasses frame.

This invention relates to an auxiliary lens attachment for releasable attachment of auxiliary lenses such as sun shades to prescription eyeglasses.
Conventional mounting mechanisms for releasably attaching auxiliary lenses to eyeglasses either attach to the bridge of the eyeglasses, the lens frame of the eyeglasses, or the lenses of the eyeglasses. Mounting arrangements for releasably attaching auxiliary lenses to eyeglasses typically add significant structural features to the auxiliary lenses which are often unattractive. Furthermore, they may partially obstruct the view of the wearer. Some mounting mechanisms attach the auxiliary lenses to eyeglasses in a manner that results in gaps between the auxiliary lenses and the eyeglasses lenses which may distract or distort the view of the wearer.
One type of mounting mechanism utilizes a clamp assembly attached to the bridge structure connecting the auxiliary lenses. The clamp assembly includes pairs of opposing clip members which are spring loaded toward each other so as to frictionally retain therebetween the bridge and/or the lenses of the eyeglasses to which the auxiliary lenses are to be attached. While these clamp mechanisms have the advantage of potentially being able to fit a variety of different eyeglasses styles, the attachment may be insecure in some cases while in others the clamp mechanism parts may tightly engage the lenses of the eyeglasses, potentially scratching the lenses.
Another type of auxiliary lens mounting mechanism for use with eyeglasses includes a frame with means for holding a pair of auxiliary lenses with greater curvature in the horizontal plane than the curvature of the lenses of the eyeglasses. The frame includes a generally U-shaped attachment member with resilient prongs configured to extend over the lens frames of the eyeglasses and releasably engage cooperative grooves on the rear face of the eyeglasses frame to effect a snap-fit connection with the eyeglasses frame and urge the auxiliary lenses against the upper outer edges of the eyeglasses frame. Such mounting mechanism provides a simple, secure attachment, but has the disadvantage that it must be custom made to fit a particular size and style of eyeglasses frame which is specifically designed to accept the mounting mechanism.
Another peripheral type mounting mechanism designed to engage the eyeglasses lens frame members includes a number of resilient prongs fixed along a frame of the auxiliary lenses in a manner that the prongs snap onto the frame members of the eyeglasses. This type of mounting mechanism has the disadvantage that it must exactly fit the size and shape of the eyeglasses frame, requiring it to be custom made to fit a particular size and style of eyeglasses.
Accordingly, it is desirable to provide an auxiliary lens attachment that is capable of releasable connection to a variety of standard eyeglasses styles and sizes, is aesthetically pleasing in appearance, and that will securely retain the auxiliary lenses in desired position without obstructing or distorting the view of the wearer or damaging the lenses of the eyeglasses.

Auxiliary lens attachment for use on eyeglasses


A stalk puller to be used with or without a mower/shredder utilizes a pair of independently mounted discs converging along their lower edge to grasp and pull stalks from the ground as the stalk puller is moved down the row by a prime mover. At least one of the discs is urged against the other by a spring such that the associated disc may allow rocks and debris to pass between the discs without damage. The spring mounting reduces adjustments due to normal wear as well as damage from debris.

Cotton stalks have always created a problem for farmers after harvest. After cotton is harvested, the stalks remain as an undesired after product that farmers have to deal with. The stalks are undesired because they harbor unwanted pests, are slow to deteriorate, and can damage equipment. In history, the boll weevil almost destroyed all cotton production. It was discovered that the boll weevil would harbor in cotton stalks over winter. One method of fighting back against the boll weevil was to completely destroy the stalks after harvest. This was one part of the Boll Weevil Eradication Program that was instituted to wipeout the boll weevil. While the boll weevil is no longer a major threat to most of the United States, many farmers still want to take preventive action against it. Another problem is that the root of the cotton stalk will also harbor nematodes. The combination of these two pests makes it desirable to destroy the stalks and dislodge the root from the ground.
The cotton stalk, if left whole, deteriorates at a slow pace. If the stalk is shredded it increases the rate of deterioration. When cotton stalks do not deteriorate, they create problems for field operations in following seasons. Problems include stalks hanging on ripper points or planters and creating an undesired furrow. If the cotton stalk tops are mowed or shredded and not completely pulled, the remaining stalk can cause excessive wear and punctures on tractor and equipment tires. If the stalks are not mowed they can catch loose wires or hoses on the tractor and implement and break them.
Various attempts to deal with the problems exist in the prior art. One prior art machine has two rubber tire pullers that are driven by a ground contact cutter drum in the rear. This apparatus has many limitations. If the soil is too wet it can stick to the cutter drum making the drum into a large ball, rendering the cutter useless. If the soil is too dry, it will break the stalk off near the ground and not pull it. The machine also leaves the field in a rough condition. When follow up operations are performed behind this, it is a very rough ride for the operator consequently ground speeds are reduced. It is also a very heavy machine, which requires a larger tractor to pull it. The size of the remaining debris is also a concern for many farmers. It leaves the stalks too long and creates dragging issues on tools that run after this machine.
A similar device has an undercutting blade ahead of the ground contact cutter drum. One major problem farmers have with this unit is the blade that runs under the stalks disturbs too much soil creating erosion problems. The undercutting blades also leave the soil loose in front on the cutting drum. The loose dirt does not create a firm enough counter shear for the cutter drum and the stalk is not always cut. The cutter drum on this unit has the same problem as the first mentioned unit when running in wet conditions. The cutter drum will ball up.
There are other methods that can achieve a desired result, but require multiple operations. One of these methods is to run a shredder and shred the stalks leaving the root in the ground. A second pass is required by either a disc puller or a disc harrow to remove the root. In this situation, the pullers disturb less soil and perform better, however this method creates at least two trips through the field and consumes more fuel.
Prior art designs for disc pullers require much maintenance. The two discs have to keep proper tension between them to firmly grasp the stalks while removing them. If the proper tension is not kept the discs will slip on the stalk and not pull them. Since the discs wear as they are used, the tension needs to be adjusted multiple times, often daily. The other major problem with the disc pullers is they are rigid. Consequently, when a large stalk or other large debris is forced into the pinch point between the discs it causes the discs or discs arms to flex creating an excessive shock load on the bearings. For example, rocks encountered by the disc puller at the pinch point can damage the blades or the bearing. This leads to premature bearing or machine failure. One additional problem with these pullers is that they have poor depth control in that the drive paddles commonly attached to the back of the discs are not alone sufficient for accurate depth control. The issue with this is in soft ground the discs will disturb too much soil.


A transistor can be fabricated to exhibit reduced channel hot carrier effects. According to one aspect of the present invention, a method for fabricating a transistor structure includes implanting a first dopant into a lightly doped drain (LDD) region to form a shallow region therein. The first dopant penetrates the substrate to a depth that is less than the LDD junction depth. A second dopant is implanted into the substrate beyond the LDD junction depth to form a source/drain region. The implantation of the second dopant overpowers a substantial portion of the first dopant to define a floating ring in the LDD region that mitigates channel hot carrier effects.

As transistor device densities continue to increase, minor fabrication and operational defects can have impact transistor operation inversely proportional with the size of the transistor. One of the well-known problems for small field effect transistors is channel hot carrier effects. For example, when a conventional metal oxide semiconductor field effect transistor (MOSFET) structure is scaled down to one micron or less, the potential energy of an electron changes dramatically when it hits the n+ drain boundaries. This sudden change in potential energy in a short distance tends to create a high electric field. This causes the electrons to behave differently within the semiconductor lattice. Electrons which have been activated by high electric fields are referred to as "hot electrons", and can, for example, penetrate into or through the gate dielectric. Electrons that penetrate into, but not through, the gate dielectric can cause the gate dielectrics to store charge over time, until the transistor ultimately fails.
Several techniques have been proposed to reduce hot carrier effects. One widely used technique is lightly doped drain extension regions, or "LDD" regions, in which a first light implant is performed before sidewall spacers are formed on the gate structure. After the sidewall spacers are in place, a second heavier implant is performed to form source/drain regions. The first implant provides only a relatively low conductivity in the silicon, so that the voltage has a gradient across the LDD region. This gradient helps prevent the voltage difference from appearing entirely at the junction of the drain and channel regions. The LDD region thus provides a region for the voltage gradient to occur, such that the peak electric field is reduced. This tends to reduce channel hot carrier (CHC) effects.
Another conventional technique that has been used is the "double doped drain." In this technique, for an n-channel transistor, the drain is implanted with both phosphorus and arsenic (or alternatively with both phosphorus and antimony.) Phosphorus diffuses faster, at a given temperature, than arsenic, and thus produces a slightly "fuzzy" drain profile. Again, this has the effect of stretching the voltage change at the drain boundaries, and this reduces the peak electric field, as is desirable.
Another known technique is to employ a thicker sidewall spacer along the edges of the gate structure. For example, after a gate structure has been formed, a further oxidation is commonly performed, to widen the oxide thickness at the lower corners of the gate. This has the effect of slightly increasing the separation between the lower corners of the gate and the silicon substrate. This is usually done, however, primarily to compensate for any damage to the gate dielectric at the lower gate corners that may be caused by etching processes.

Reduction of channel hot carrier effects in transistor devices


A gas blending and compressing system includes a blender having a blending chamber configured to blend two or more separate gases into a blended gas, a compressor configured to compress the blended gas to a selected pressure, and a control system configured to sense operational parameters of the blender and the compressor, to sense one or more properties of the blended gas and to control the operation of the blender and the compressor to maintain the quality of the blended gas. A method for blending and compressing two or more gases includes the steps of: blending the separate gases into a blended gas using the blender; compressing the blended gas using the compressor; and matching a constant flow through the compressor to a selected minimum flow dependent on nominal operating parameters of the compressor. Alternate embodiment systems and methods blend separate gases at high pressure without using a compressor. Various principles are applied at high pressure including choked flow and partial pressure blending.

In many applications, for instance in the generation of an alternative fuel, it is important to blend two or more gases in a constant ratio prior to compression. If the rate of blending falls behind the intake rate of the compressor, the intake pressure will fall. Safety is an issue in the situation where the blended gases are fuels since if the intake pressure falls below atmospheric pressure, air may be sucked into the fuel gas mixture. Therefore compressor control systems generally include a low intake pressure limit switch that stops the compressor if the intake pressure is too low.
Conversely, if the rate of blending exceeds the intake rate of the compressor, the intake pressure will rise. If the pressure of the blended gas at the intake is too high excessive mechanical stress can be placed on the compressor. Therefore compressor control systems generally include a high intake pressure limit switch that stops the compressor if the intake pressure is too high. The reliable operation of a gas blending and compression system depends upon striking a balance between blender production and compressor consumption.
The gas blending and compressing system to be described blends gases in a constant ratio while simultaneously matching blender production with compressor consumption. However, the foregoing examples of the related art and limitations related therewith, are intended to be illustrative and not exclusive. Other limitations of the related art will become apparent to those of skill in the art upon a reading of the specification and a study of the drawings.

System for blending and compressing gases


Application of a reference mixture of natural products for systematic analysis and comparison of the properties of biphasic solvent systems in counter-current/partition chromatography. Because the reference mixture is comprised of compounds with varying polarities, functional groups, and structural features it provides a rational method for mapping the optimal resolution polarity range of a particular solvent system. The mapping of optimal resolution polarity ranges of solvent systems provided for the description of the overall optimal resolution polarity range of a solvent system family, comprised of the same solvents in different proportions. By comparing the reference mixture performance in the individual members of a solvent system family, the solvent system that best functions as the representative of, or portal to, the solvent system families is determined. Use of the reference mixture also afforded a method to compare the overall optimal resolution polarity ranges of solvent system families. Based on performance of reference mixture chromatograms, the CCC properties of solvent systems, can be compared and their CCC potential examined. The methods of the invention employing the reference mixture provides was used to identify a quaternary solvent system, hexane/t-butylmethylether/acetonitrile/water (HterAcWat), which was found to be useful for CCC of mixtures containing natural products.

Counter-current chromatography (CCC) is gaining popularity as a viable separation technique, particularly in natural products chemistry. For example, high-speed counter-current chromatography (HSCCC) and centrifugal partition chromatography (CPC) have increasingly been used to isolate and purify a multitude of natural products [1-14]. Despite its indisputable worth, CCC has often been passed over for other chromatographic techniques. The lack of a clear method for Characterizing the properties and comparing the relative merits of the many possible biphasic solvent systems that might be used for CCC appears to be a major drawback to the use of CCC separations. The choice of solvent system for CCC separations is of utmost importance to the successful use of the method. Compared to the far more popular solid-support chromatography, the selection of CCC solvent systems is significantly more challenging because it is equivalent to simultaneously choosing both the column and the eluant.
Many CCC solvent systems have been proposed, studied and successfully employed over the years as reviewed in several articles [15-19]. Even though CCC is a high-resolution chromatographic method, it will not separate desired target analytes in any appreciable way unless the solvent system has been chosen very carefully. There is a window of opportunity present in CCC separations that is related to the KD value of a given chemical species, typically a molecule, in a particular solvent system. The distribution constant, KD, for a given chemical species can be expressed as the concentration of that chemical species in the stationary phase divided by the concentration of the chemical species in the mobile phase. A solvent system, where the KD value of a particular chemical species is close to one, is generally considered to be the ideal system for separating that particular chemical species with optimal resolution. From this perspective, the varied chemical constituents of a particular mixture can be schematically arrayed along a polarity continuum as a function of KD of the chemical constituents in a given solvent system. In such an array for a given solvent system, CCC separation targets an interval of the polarity continuum, called the "sweet spot" of optimal resolution [20], and the solvent system can be used in CCC to separate the chemical constituents that fall within this sweet spot with high resolution. In order to represent the position of the sweet spot in a polarity continuum, two different schematics have been developed.
Use of a CCC technique called elution-extrusion (EECCC) [21-24] has the effect of maximizing the width of the sweet spot for a given solvent system and, at the same time, minimizing run times. Under elution-extrusion conditions, compounds already separated in the column are eluted (ideally) without further change in resolution. The KD value of each chemical species can be calculated from its retention time and the appropriate parameters, as is known in the art. EECCC chromatograms of complex mixtures wherein the mixture consistutents exhibit a with a wide range of polarities tend to have a cluster of chemical species eluted near the void volume (0<KD<0.25) and another cluster near the end of the run where the last component(s) are eluted (16<KD<∞ in this example). In between the two extremes lies the sweet spot (0.25≦KD≦16) where optimal resolution of compounds is observed.
Biphasic solvent systems for CCC applications have traditionally been organized as solvent families that are comprised of the same solvents mixed in varying proportions. Common solvent families are hexane/ethyl acetate/methanol/water (HEMWat), chloroform/methanol/water (ChMWat), and heptane/ethyl acetate/methanol/water (the "Arizona" family) [25]. Solvent system families provide a methodical means of searching for a particular solvent system that predicts a reasonable KD value for the target compound(s) in a CCC separation. For example, if a relatively high concentration of a particular chemical species is determined to be present in the upper phase of the HEMWat system 0 (see Table 1, where system 0 contains equal relative proportions of the four solvents of the system family), the KD value of that chemical species will likely be brought closer to 1 (an equal concentration of the compound in both phases) by decreasing the ratios of ethyl acetate to hexane and/or water to methanol as in a system such as HEMWat−3. In this way, once a particular solvent system family member has been tested as portal to the solvent system family, there exists a methodical way to modifying the solvent system to seek one that will exhibit an optimal KD value for the target chemical species.
A factor that distinguishes one solvent system family from another is the polarity range of chemical species for which the solvent system family may be optimized. For example, the HEMWat solvent system family is generally considered to separate compounds of lipophilic to moderate polarity, while the ethyl acetate/n-butanol/water is a solvent system family that is likely to separate compounds of moderate to hydrophilic polarity. As the aforementioned example suggests, there may be considerable overlap of polarity ranges between solvent system families that introduces a degree of empiricism to the solvent system selection process.
It is important to note that in liquid/liquid chromatography separation is driven by the relative solubilities of the analytes in the two different solvent layers, and not strictly by their relative polarities. In fact, CCC has been shown to be an excellent technique for separating homologues with very similar polarities [26, 27]. However, the concept of relative polarity does provide a convenient framework with which to represent the separation potential of organic compounds.
Hitherto, no standard method existed to evaluate solvent system or solvent system family performance and, therefore, the solvent system selection process has been essentially empirical in nature.
The present invention provides a systematic way to evaluate solvent system performance and make rational selections of one or more solvent systems for the separation of constituents (unknown or known) in a given mixture.

Selection and rational development of solvent systems in counter-current chromatograph

The Board of Trustees of the University of Illinois


A secondary battery including: an electrode assembly; a case receiving the electrode assembly and including a plurality of stepped sections at an inner side of the case in contact with the electrode assembly; and at least one electrode tab electrically connected with the electrode assembly and withdrawn toward an outside of the case. In the secondary battery, a friction force between the inner side of the case and the electrode assembly is increased due to the plurality of stepped sections, thereby minimizing or reducing movement of the electrode assembly within the case.

1. Field
Aspects of embodiments of the present invention relate to a secondary battery.
2. Description of the Related Art
A secondary battery has a function of charging and discharging. Recently, secondary batteries have been widely used as an energy source in devices such as a smartphone, a notebook computer, and an electric tool, for example.
Generally, the secondary battery consists of an electrode assembly and a case for receiving the electrode assembly. The electrode assembly consists of an anode plate having a surface of an anode collector coated with an anode active material, a cathode plate having a surface of a cathode collector coated with a cathode active material, and a separator disposed between the anode plate and the cathode plate to electrically isolate the anode plate and the cathode plate, wherein the anode plate, the cathode plate, and the separator may be wound in a jelly roll shape. In addition, the case receives the electrode assembly and covers the electrode assembly.
In this case, two electrode tabs are exposed to the outside of the case and have one-to-one correspondence with the anode plate and the cathode plate to electrically connect each other.
When the electrode assembly moves within the case, a deviation of a length of the electrode tabs exposed to the outside may become large and decrease the production yield of the secondary battery.


Provided is a method of preparing an alkali-sulfur cell comprising: (a) combining a quantity of an active material, a quantity of an electrolyte containing an alkali salt dissolved in a solvent, and a conductive additive to form a deformable and electrically conductive electrode material, wherein the conductive additive, containing conductive filaments, forms a 3D network of electron-conducting pathways; (b) forming the electrode material into a quasi-solid electrode (the first electrode), wherein the forming step includes deforming the electrode material into an electrode shape without interrupting the 3D network of electron-conducting pathways such that the electrode maintains an electrical conductivity no less than 10−6 S/cm; (c) forming a second electrode (the second electrode may be a quasi-solid electrode as well); and (d) forming an alkali-sulfur cell by combining the quasi-solid electrode and the second electrode having an ion-conducting separator disposed between the two electrodes.

Rechargeable lithium-ion (Li-ion) and lithium metal batteries (including Li-sulfur and Li metal-air batteries) are considered promising power sources for electric vehicle (EV), hybrid electric vehicle (HEV), and portable electronic devices, such as lap-top computers and mobile phones. Lithium as a metal element has the highest capacity (3,861 mAh/g) compared to any other metal or metal-intercalated compound as an anode active material (except Li4.4Si, which has a specific capacity of 4,200 mAh/g). Hence, in general, Li metal batteries have a significantly higher energy density than lithium ion batteries.
Historically, rechargeable lithium metal batteries were produced using non-lithiated compounds having relatively high specific capacities, such as TiS2, MoS2, MnO2, CoO2, and V2O5, as the cathode active materials, which were coupled with a lithium metal anode. When the battery was discharged, lithium ions were transferred from the lithium metal anode through the electrolyte to the cathode, and the cathode became lithiated. Unfortunately, upon repeated charges/discharges, the lithium metal resulted in the formation of dendrites at the anode that ultimately grew to penetrate through the separator, causing internal shorting and explosion. As a result of a series of accidents associated with this problem, the production of these types of secondary batteries was stopped in the early 1990's, giving ways to lithium-ion batteries.
In lithium-ion batteries, pure lithium metal sheet or film was replaced by carbonaceous materials as the anode. The carbonaceous material absorbs lithium (through intercalation of lithium ions or atoms between graphene planes, for instance) and desorbs lithium ions during the re-charge and discharge phases, respectively, of the lithium ion battery operation. The carbonaceous material may comprise primarily graphite that can be intercalated with lithium and the resulting graphite intercalation compound may be expressed as LixC6, where x is typically less than 1.
Although lithium-ion (Li-ion) batteries are promising energy storage devices for electric drive vehicles, state-of-the-art Li-ion batteries have yet to meet the cost and performance targets. Li-ion cells typically use a lithium transition-metal oxide or phosphate as a positive electrode (cathode) that de/re-intercalates Li+ at a high potential with respect to the carbon negative electrode (anode). The specific capacity of lithium transition-metal oxide or phosphate based cathode active material is typically in the range from 140-170 mAh/g. As a result, the specific energy of commercially available Li-ion cells is typically in the range from 120-250 Wh/kg, most typically 150-220 Wh/kg. These specific energy values are two to three times lower than what would be required for battery-powered electric vehicles to be widely accepted.
With the rapid development of hybrid (HEV), plug-in hybrid electric vehicles (HEV), and all-battery electric vehicles (EV), there is an urgent need for anode and cathode materials that provide a rechargeable battery with a significantly higher specific energy, higher energy density, higher rate capability, long cycle life, and safety. One of the most promising energy storage devices is the lithium-sulfur (Li—S) cell since the theoretical capacity of Li is 3,861 mAh/g and that of S is 1,675 mAh/g. In its simplest form, a Li—S cell consists of elemental sulfur as the positive electrode and lithium as the negative electrode. The lithium-sulfur cell operates with a redox couple, described by the reaction S8+16Li↔8Li2S that lies near 2.2 V with respect to Li+/Li°. This electrochemical potential is approximately ⅔ of that exhibited by conventional positive electrodes (e.g. LiMnO4) in a conventional lithium-ion battery. However, this shortcoming is offset by the very high theoretical capacities of both Li and S. Thus, compared with conventional intercalation-based Li-ion batteries, Li—S cells have the opportunity to provide a significantly higher energy density (a product of capacity and voltage). Assuming complete reaction to Li2S, energy densities values can approach 2,500 Wh/kg and 2,800 Wh/L, respectively, based on the combined Li and S weight or volume. If based on the total cell weight or volume, the energy densities can reach approximately 1,000 Wh/kg and 1,100 Wh/L, respectively. However, the current Li-sulfur cells reported by industry leaders in sulfur cathode technology have a maximum cell specific energy of 250-400 Wh/kg and 500-650 Wh/L (based on the total cell weight or volume), which are far below what is possible.
In summary, despite its considerable advantages, the Li—S cell is plagued with several major technical problems that have thus far hindered its widespread commercialization:    (1) Conventional lithium metal cells still have dendrite formation and related internal shorting issues.    (2) Sulfur or sulfur-containing organic compounds are highly insulating, both electrically and ionically. To enable a reversible electrochemical reaction at high current densities or charge/discharge rates, the sulfur must maintain intimate contact with an electrically conductive additive. Various carbon-sulfur composites have been utilized for this purpose, but only with limited success owing to the limited scale of the contact area. Typical reported capacities are between 300 and 550 mAh/g (based on the cathode carbon-sulfur composite weight) at moderate rates.    (3) The cell tends to exhibit significant capacity decay during discharge-charge cycling. This is mainly due to the high solubility of the lithium polysulfide anions formed as reaction intermediates during both discharge and charge processes in the polar organic solvents used in electrolytes. During cycling, the lithium polysulfide anions can migrate through the separator to the Li negative electrode whereupon they are reduced to solid precipitates (Li2S2 and/or Li2S), causing active mass loss. In addition, the solid product that precipitates on the surface of the positive electrode during discharge becomes electrochemically irreversible, which also contributes to active mass loss.    (4) More generally speaking, a significant drawback with cells containing cathodes comprising elemental sulfur, organosulfur and carbon-sulfur materials relates to the dissolution and excessive out-diffusion of soluble sulfides, polysulfides, organo-sulfides, carbon-sulfides and/or carbon-polysulfides (hereinafter referred to as anionic reduction products) from the cathode into the rest of the cell. This phenomenon is commonly referred to as the Shuttle Effect. This process leads to several problems: high self-discharge rates, loss of cathode capacity, corrosion of current collectors and electrical leads leading to loss of electrical contact to active cell components, fouling of the anode surface giving rise to malfunction of the anode, and clogging of the pores in the cell membrane separator which leads to loss of ion transport and large increases in internal resistance in the cell.
In response to these challenges, new electrolytes, protective films for the lithium anode, and solid electrolytes have been developed. Some interesting cathode developments have been reported recently to contain lithium polysulfides; but, their performance still fall short of what is required for practical applications.
For instance, Ji, et al reported that cathodes based on nanostructured sulfur/meso-porous carbon materials could overcome these challenges to a large degree, and exhibit stable, high, reversible capacities with good rate properties and cycling efficiency [Xiulei Ji, Kyu Tae Lee, & Linda F. Nazar, "A highly ordered nanostructured carbon-sulfur cathode for lithium-sulfur batteries," Nature Materials 8, 500-506 (2009)]. However, the fabrication of the proposed highly ordered meso-porous carbon structure requires a tedious and expensive template-assisted process. It is also challenging to load a large proportion of sulfur into these meso-scaled pores using a physical vapor deposition or solution precipitation process.
Zhang, et al. (US Pub. No. 2014/0234702; Aug. 21, 2014) makes use of a chemical reaction method of depositing S particles on surfaces of isolated graphene oxide (GO) sheets. But, this method is incapable of creating a large proportion of S particles on GO surfaces (i.e. typically <66% of S in the GO-S nanocomposite composition). The resulting Li—S cells also exhibit poor rate capability; e.g. the specific capacity of 1,100 mAh/g (based on S weight) at 0.02 C rate is reduced to <450 mAh/g at 1.0 C rate. It may be noted that the highest achievable specific capacity of 1,100 mAh/g represents a sulfur utilization efficiency of only 1,100/1,675=65.7% even at such a low charge/discharge rate (0.02 C means completing the charge or discharge process in 1/0.02=50 hours; 1 C=1 hour, 2 C=½ hours, and 3 C=⅓ hours, etc.) Further, such a S-GO nanocomposite cathode-based Li—S cell exhibits very poor cycle life, with the capacity typically dropping to less than 60% of its original capacity in less than 40 charge/discharge cycles. Such a short cycle life makes this Li—S cell not useful for any practical application. Another chemical reaction method of depositing S particles on graphene oxide surfaces is disclosed by Wang, et al. (US Pub. No. 2013/0171339; Jul. 4, 2013). This Li—S cell still suffers from the same problems.
A solution precipitation method was disclosed by Liu, et al. (US Pub. No. 2012/0088154; Apr. 12, 2012) to prepare graphene-sulfur nanocomposites (having sulfur particles adsorbed on GO surfaces) for use as the cathode material in a Li—S cell. The method entails mixing GO sheets and S in a solvent (CS2) to form a suspension. The solvent is then evaporated to yield a solid nanocomposite, which is then ground to yield nanocomposite powder having primary sulfur particles with an average diameter less than approximately 50 nm. Unfortunately, this method does not appear to be capable of producing S particles less than 40 nm. The resulting Li—S cell exhibits very poor cycle life (a 50% decay in capacity after only 50 cycles). Even when these nanocomposite particles are encapsulated in a polymer, the Li—S cell retains less than 80% of its original capacity after 100 cycles. The cell also exhibits a poor rate capability (specific capacity of 1,050 mAh/g (S wt.) at 0.1 C rate, dropped to <580 mAh/g at 1.0 C rate). Again, this implies that a large proportion of S did not contribute to the lithium storage, resulting in a low S utilization efficiency.
Despite the various approaches proposed for the fabrication of high energy density Li—S cells, there remains a need for cathode materials and production processes that improve the utilization of electro-active cathode materials (S utilization efficiency), and provide rechargeable Li—S cells with high capacities over a large number of cycles.
Most significantly, lithium metal (including pure lithium, lithium alloys of high lithium content with other metal elements, or lithium-containing compounds with a high lithium content; e.g. >80% or preferably >90% by weight Li) still provides the highest anode specific capacity as compared to essentially all other anode active materials (except pure silicon, but silicon has pulverization issues). Lithium metal would be an ideal anode material in a lithium-sulfur secondary battery if dendrite related issues could be addressed.
Sodium metal (Na) and potassium metal (K) have similar chemical characteristics to Li and the sulfur cathode in room temperature sodium-sulfur cells (RT Na—S batteries) or potassium-sulfur cells (K—S) face the same issues observed in Li—S batteries, such as: (i) low active material utilization rate, (ii) poor cycle life, and (iii) low Coulombic efficiency. Again, these drawbacks arise mainly from insulating nature of S, dissolution of S and Na or K polysulfide intermediates in liquid electrolytes (and related Shuttle effect), and large volume change during charge/discharge.
It may be noted that in most of the open literature reports (scientific papers) and patent documents, scientists or inventors choose to express the cathode specific capacity based on the sulfur or lithium polysulfide weight alone (not the total cathode composite weight), but unfortunately a large proportion of non-active materials (those not capable of storing lithium, such as conductive additive and binder) is typically used in their Li—S cells. For practical use purposes, it is more meaningful to use the cathode composite weight-based capacity value.
Low-capacity anode or cathode active materials are not the only problem associated with the lithium-sulfur or sodium-sulfur battery. There are serious design and manufacturing issues that the battery industry does not seem to be aware of, or has largely ignored. For instance, despite the seemingly high gravimetric capacities at the electrode level (based on the anode or cathode active material weight alone) as frequently claimed in open literature and patent documents, these electrodes unfortunately fail to provide batteries with high capacities at the battery cell or pack level (based on the total battery cell weight or pack weight). This is due to the notion that, in these reports, the actual active material mass loadings of the electrodes are too low. In most cases, the active material mass loadings of the anode (areal density) is significantly lower than 15 mg/cm2 and mostly <8 mg/cm2 (areal density=the amount of active materials per electrode cross-sectional area along the electrode thickness direction). The cathode active material amount is typically 1.5-2.5 times higher than the anode active material amount in a cell. As a result, the weight proportion of the anode active material (e.g. carbon) in a Na ion-sulfur or Li ion-sulfur battery cell is typically from 15% to 20%, and that of the cathode active material from 20% to 35% (mostly <30%). The weight fraction of the cathode and anode active materials combined is typically from 35% to 50% of the cell weight.
The low active material mass loading is primarily due to the inability to obtain thicker electrodes (thicker than 100-200 μm) using the conventional slurry coating procedure. This is not a trivial task as one might think, and in reality the electrode thickness is not a design parameter that can be arbitrarily and freely varied for the purpose of optimizing the cell performance. Contrarily, thicker samples tend to become extremely brittle or of poor structural integrity and would also require the use of large amounts of binder resin. Due to the low-melting and soft characteristics of sulfur, it has been practically impossible to produce a sulfur cathode thicker than 100 μm. Furthermore, in a real battery manufacturing facility, a coated electrode thicker than 150 μm would require a heating zone as long as 100 meters to thoroughly dry the coated slurry. This would significantly increase the equipment cost and reduce the production throughput. The low areal densities and low volume densities (related to thin electrodes and poor packing density) result in a relatively low volumetric capacity and low volumetric energy density of the battery cells.
With the growing demand for more compact and portable energy storage systems, there is keen interest to increase the utilization of the volume of the batteries. Novel electrode materials and designs that enable high volumetric capacities and high mass loadings are essential to achieving improved cell volumetric capacities and energy densities.
Thus, an object of the present disclosure is to provide a rechargeable alkali metal-sulfur cell based on rational materials and battery designs that overcome or significantly reduce the following issues commonly associated with conventional Li—S and Na—S cells: (a) dendrite formation (internal shorting); (b) extremely low electric and ionic conductivities of sulfur, requiring large proportion (typically 30-55%) of non-active conductive fillers and having significant proportion of non-accessible or non-reachable sulfur or alkali metal polysulfides); (c) dissolution of S and alkali metal polysulfide in electrolyte and migration of polysulfides from the cathode to the anode (which irreversibly react with Li or Na metal at the anode), resulting in active material loss and capacity decay (the shuttle effect); (d) short cycle life; and (e) low active mass loading in both the anode and the cathode.
A specific object of the present disclosure is to provide a rechargeable alkali metal-sulfur battery (e.g. mainly Li—S and room temperature Na—S battery) that exhibits an exceptionally high specific energy or high energy density. One particular technical goal of the present disclosure is to provide an alkali metal-sulfur or alkali ion-sulfur cell with a cell specific energy greater than 400 Wh/Kg, preferably greater than 500 Wh/Kg, more preferably greater than 600 Wh/Kg, and most preferably greater than 700 Wh/kg (all based on the total cell weight). Preferably, the volumetric energy density is greater than 600 Wh/L, further preferably greater than 800 Wh/L, and most preferably greater than 1,000 Wh/L.
Another object of the present disclosure is to provide an alkali metal-sulfur cell that exhibits a high cathode specific capacity, higher than 1,200 mAh/g based on the sulfur weight, or higher than 1,000 mAh/g based on the cathode composite weight (including sulfur, conducting additive or substrate, and binder weights combined, but excluding the weight of cathode current collector). The specific capacity is preferably higher than 1,400 mAh/g based on the sulfur weight alone or higher than 1,200 mAh/g based on the cathode composite weight. This must be accompanied by a high specific energy, good resistance to dendrite formation, and a long and stable cycle life.
With electronic devices becoming more compact and electric vehicles (EV) becoming of lighter weight, there is a pressing need for a high-energy density battery that is shape-conformable so that it can be fitted into some odd-shape or confined spaces in a device or vehicle. By implementing a battery in a space that otherwise would be an empty (unused or "wasted") space (e.g. part of a car door or roof top), one can make the device more compact or make the EV capable of storing more power. In order to make the battery shape-conformable, the electrodes must be deformable, flexible, and shape-conformable.
Therefore, there is clear and urgent need for lithium and sodium batteries that have high active material mass loading (high areal density), high electrode thickness or volume without compromising conductivity, high-rate capability, high power density, and high energy density. These batteries must be produced in an environmentally benign manner. Further, the battery must be shape-conformable.

Method of producing shape-conformable alkali metal-sulfur battery having a deformable and conductive quasi-solid electrode


A method for forming metal-cladded metal matrix composite wires. The method associates a ductile metal cladding to the exterior surface of a metal matrix composite wire comprising a plurality of continuous, longitudinally positioned fibers in a metal matrix.

In general, metal matrix composites (MMCs) are known. MMCs typically include a metal matrix reinforced with fibers either particulates, whiskers, short fibers or long. Examples of metal matrix composites include aluminum matrix composite wires (e.g., silicon carbide, carbon, boron, or polycrystalline alpha alumina fibers embedded in an aluminum matrix), titanium matrix composite tapes (e.g., silicon carbide fibers embedded in a titanium matrix), and copper matrix composite tapes (e.g., silicon carbide or boron carbide fibers embedded in a copper matrix).
One use of metal matrix composite wire is as a reinforcing member in bare overhead electrical power transmission cables is of particular interest. One typical need for cables is driven by the need to increase the power transfer capacity of existing transmission infrastructure.
Desirable performance requirements for cables for overhead power transmission include corrosion resistance, environmental endurance (e.g., UV and moisture), resistance to loss of strength at elevated temperatures, creep resistance, as well as relatively high elastic modulus, low density, low coefficient of thermal expansion, high electrical conductivity, and/or high strength. Although overhead power transmission cables including aluminum matrix composite wires are known, for some applications there is a continuing desire, for example, for aluminum matrix composite wires having improved strain to failure values and/or size uniformity.
The availability of round wires having a more uniform diameter at different points along the length of the round wires is desirable for providing cable constructions with a more uniform diameter. Thus, there is a need for a substantially continuous metal matrix composite wire having a round cross-section and uniform diameter and methods for making such a substantially continuous metal matrix composite wire.

Method for making metal cladded metal matrix composite wire


An image processor includes: an image sensor which outputs a short exposure image and a long exposure image; a sensor controller which controls first and second exposure sensitivities; a motion blending ratio calculator which calculates a motion blending ratio based on a motion amount of a subject; a motion-adapted image synthesizer which generates a motion-adapted image based on the motion blending ratio; and an HDR image synthesizer which synthesizes the motion-adapted image and the short exposure image, to generate an HDR image. The sensor controller controls the first exposure sensitivity: so that the first exposure time changes from increasing to constant and the first sensor gain changes from constant to increasing, when the brightness of the subject decreases from a first subject brightness; and so that the first exposure time changes to increasing and the first sensor gain changes to constant, when the brightness decreases from a second subject brightness.

Image processors disclosed in Patent Literatures 1 and 2 have been known as techniques of generating a high dynamic range (HDR) image having a wide dynamic range by synthesizing a plurality of images of subjects captured in different exposure times.
In the image processor of Patent Literature 1, a reference image and other images are compared with each other so as to detect dynamic areas included in the images. Furthermore, in the image processor, a dynamic area included in the reference image is replaced with a corresponding area of another image so as to generate a replacement image. An HDR image is generated by synthesizing the replacement image and the reference image. In this way, the HDR image is generated in consideration of a moving object.
In the image processor in Patent Literature 2, a synthesis ratio of a plurality of images captured with different exposure times and to be synthesized is determined based on saturation degrees of areas in which motions of a subject have been detected, when the plurality of images of the subject are synthesized. In this way, an HDR image with a reduced noise influence, etc. is generated.

Image processor and image processing method

PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.


The present invention relates to an electrochromic compound, and an electrochromic composition and an electrochromic device, including the same. The electrochromic compound according to the present invention may achieve excellent black coloring effects and excellent curing characteristics, and thus may be used advantageously in an electrochromic device.

An electrochromic device (ECD) refers to an electrochemical device including one or more electrochromic materials that enable a chemical reaction capable of changing or adjusting a color to proceed as a result of an electrochemical reaction as electricity is applied to an oxidation or reduction electrode. Electrochromism is a well-known physical phenomenon observed for a specific class of compound that reversibly changes a color when a voltage is applied. This material undergoes a reversible change in optical characteristics by oxidation and reduction. Typically, an electrochromic material may be colorless when an electric field is not applied and may be colored when an electric field is applied.
Electrochromic materials may be divided into organic EC materials, inorganic EC materials, and organic-inorganic hybrid EC materials. Examples of a representative EC material include inorganic metal oxides such as tungsten oxide (WO3), nickel oxide (NiO), and titanium oxide (TiO2) and organic materials, such as bipyridinium (viologen) derivatives, quinone-based derivatives such as anthraquinone and azine-based derivatives such as phenothiazine.
Organic electrochromic materials are classified into oxidation color development types and reduction color development types. Examples of the oxidation color development types include phenylamine, polyaniline, fluoran, phenothiazine, and the like, and examples of the reduction color development types include viologen, anthraquinone, phthalic acid ester, and the like. Among these various organic electrochromic materials, the viologen derivatives have been recently actively studied due to advantages such as introduction of various substitution groups, driving at a low voltage, and stability of repeated driving (KR10-2011-0018628A).
Viologen-based electrochromic materials cause poor solubility due to the planarity of the structure thereof, production of a dimer of a viologen radical cation (V+) generated as a result of an electrochemical reaction in a reduction electrode, and the like. When the viologen-based electrochromic material is applied to the structure of the device, the poor solubility, the production of the dimer, and the like are recognized as causes of deterioration in stability for repeated driving.
The prior art technologies on black electrochromism usually uses simple mixing of a blue material and a green material, but in this case, it is difficult to satisfy a black coordinate required by a user, and it is likely to cause a color separation during a repeated driving.
Throughout the present specification, a plurality of documents are referenced, and citations thereof are indicated. The disclosure of each of the cited documents is incorporated herein by reference in its entirety to describe the level of the technical field to which the present invention pertains and the content of the present invention more apparently.

Black electrochromic compound, and electrolyte-integrated radiation curable electrochromic composition and electrochromic device which contain same


To detect the presence of at least one other terminal in a data session (e.g., an RTP session), terminal a generates a request to solicit a response from each terminal, forms an APP packet in RTCP for the request, encapsulates the APP packet in at least one IP packet, and sends the IP packet(s) to the other terminal(s). Terminal a then monitors for a response from each terminal to which the request is sent. Terminal a declares a terminal to be present in the data session if a response is received from that terminal. Terminal a may send one or more additional requests to each terminal from which a response is not received. Terminal a declares a terminal to be absent from the data session if a predetermined number of (e.g., two) requests have been sent to that terminal and a response is not received from the terminal.

1. Field
The present disclosure relates generally to communication, and more specifically to techniques for detecting the presence of a terminal in a data session.
2. Background
Wireless and wireline communication networks are widely deployed to provide various communication services such as voice, video, packet data, messaging, broadcast, multimedia, and so on. Each service may have different characteristics and requirements. For example, a packet data call may be bursty in nature but may be able to tolerate variable and long delay. In contrast, a voice call may generate data at regular intervals and may have a relatively stringent delay requirement.
Multiple terminals may establish a data session via one or more networks to exchange real-time data such as voice, video, and so on. For example, the data session may be for a teleconference call between multiple participants located at different sites. During the data session, each terminal may send data to other terminals if and when there is data to send. The data exchanges between the terminals may be sporadic. Furthermore, the data session may last a long time, and terminals may join and leave the data session at any time during the session. Because of the dynamic nature of the data session, it may be desirable to ascertain whether a given terminal is still present in the data session.
Various schemes are available to ascertain whether a given terminal is present in a data session. In one scheme, each terminal sends idle packets periodically during the data session to notify other terminals of the presence of the sending terminal. This scheme may result in many idle packets being sent, which may be highly undesirable for a wireless network since radio resources are scarce. Furthermore, idle packets may not be defined for all types of media, e.g., images, text, and so on. In another scheme, each terminal periodically generates and sends reports to other terminals. These reports may convey information regarding packets that have been sent and/or packets that have been received by the terminal sending the report. These reports may be sent infrequently (e.g., every 5 seconds) and may be lost due to packet errors. In yet another scheme, a timer is maintained for each terminal in the data session and is refreshed periodically. If the timer for a terminal expires, then that terminal is deemed to have left the data session. The timer is typically set to a large value to reduce the refresh rate, which then takes a long time to detect the absence of a terminal in the data session. Furthermore, network resources are utilized to maintain the timers for the terminals. In general, all of the schemes described above for detecting the presence of terminals in the data session consume network resources and are not very efficient.
There is therefore a need in the art for techniques to efficiently detect the presence of a terminal in a data session.

Method and apparatus for detecting the presence of a terminal in a data session


A crystalline Fe-based alloy powder composed of Fe-based alloy particles containing, within a structure thereof, nanocrystal grains having an average grain size of 30 nm or less, and in which d50, which is a particle diameter corresponding to a cumulative frequency of 50% by volume, is from 3.5 μm to 35.0 μm in a cumulative distribution curve that is obtained by laser diffractometry and that shows the relationship between the particle diameter and the cumulative frequency from the small particle diameter side, and a ratio of Fe-based alloy particles having a particle diameter of 2 μm or less to the total of the Fe-based alloy particles, which is determined by laser diffractometry, is from 0% by volume to 8% by volume.

Conventionally, Fe-based alloy powders composed of Fe-based alloy particles are known.
For example, Patent Document 1 discloses, as a Fe-based soft magnetic alloy that has excellent soft magnetic properties (especially, a high frequency magnetic property) and a low magnetostriction and exhibits little degradation in properties due to impregnation, deformation, or the like, a Fe-based soft magnetic alloy that is characterized by having a composition represented by Formula: (Fe1−aMa)100−x−y−z−αCuxSiyBzM′α (wherein M represents Co and/or Ni, M′ represents at least one element selected from the group consisting of Nb, W, Ta, Zr, Hf, Ti and Mo, and a, x, y, z, and α satisfy 0≤a≤0.5, 0.1≤x≤3, 0≤y≤30, 0≤z≤25, 5≤y+z≤30, and 0.1≤α≤30, respectively), and in which at least 50% of the structure is composed of fine crystal grains. On page 9 of Patent Document 1, as the above Fe-based soft magnetic alloy, a powdery one is disclosed.
Patent Document 2 discloses, as a FeSiBNbCu type soft magnetic metal powder for producing a power inductor excellent in saturation current, inductance, magnetic permeability, and a core loss value, a spherical FeSiBNbCu type soft magnetic metal powder in which nanocrystal grains are formed.
Patent Document 3 discloses, as a soft magnetic powder capable of ensuring high insulation properties between particles when the powder is compacted, a soft magnetic powder that has a composition represented by Fe100−a−b−c−d−e−fCuaSibBcMdM′eXf (atom %) (wherein, M represents at least one element selected from the group consisting of Nb, W, Ta, Zr, Hf, Ti, and Mo, M′ represents at least one element selected from the group consisting of V, Cr, Mn, Al, a platinum group element, Sc, Y, Au, Zn, Sn, and Re, X represents at least one element selected from the group consisting of C, P, Ge, Ga, Sb, In, Be, and As, and a, b, c, d, e, and f are numbers that satisfy 0.1≤a≤3, 0≤b≤30, 0≤c≤25, 5≤b+c≤30, 0.1≤d≤30, 0≤e≤10, and 0≤f≤10), in which a crystal structure with a grain size of from 1 nm to 30 nm is included in an amount of 40% by volume or more, and in which, when the soft magnetic powder is subjected to a classification treatment using a JIS standard sieve having an opening of 45 μm, a JIS standard sieve having an opening of 38 μm, and a JIS standard sieve having an opening of 25 μm in this order and when particles that pass through the JIS standard sieve having an opening of 45 μm but do not pass through the JIS standard sieve having an opening of 38 μm are taken as first particles, particles that pass through the JIS standard sieve having an opening of 38 μm but do not pass through the JIS standard sieve having an opening of 25 μm are taken as second particles, and particles that pass through the JIS standard sieve having an opening of 25 μm are taken as third particles, coercive force Hc1 of the first particles, coercive force Hc2 of the second particles, and coercive force Hc3 of the third particles satisfy the relationship that Hc2/Hc1 is from 0.85 to 1.4 and Hc3/Hc1 is from 0.5 to 1.5.
Patent Document 4 discloses, as a method for producing a dust core having excellent magnetic properties, a method for producing a dust core, the method including molding and fixing a magnetic powder that is a nanocrystal magnetic powder in which at least 50% or more of the structure has a nanocrystal structure with a crystal grain size of 100 nm or less, or an amorphous magnetic powder having a composition capable of forming the above nanocrystal structure by heat treatment, wherein the magnetic powder is produced by a water atomization method and has a composition represented by Formula: Fe(100−X−Y−Z−α−β)BXSiYCuZMαM′β (atom %) (wherein M represents at least one element selected from the group consisting of Nb, W, Ta, Zr, Hf, Ti, and Mo, M′ represents at least one element selected from the group consisting of V, Cr, Mn, Al, a platinum group element, Sc, Y, Au, Zn, Sn, Re, and Ag, and X, Y, Z, α, and β satisfy 12≤X≤15, 0≤Y≤15, 0.1≤Z≤3, 0.1≤α≤30, and 0≤β≤10, respectively).
Patent Document 1: Japanese Patent Application Laid-Open (JP-A) No. S64-079342
Patent Document 2: JP-A No. 2016-25352
Patent Document 3: JP-A No. 2017-110256
Patent Document 4: JP-A No. 2004-349585

Crystalline Fe-based alloy powder and method for producing same


The invention provides a method of initiating a telematics service to a mobile vehicle. A service initiation is received from a call center. A caller identification number of the service initiation is determined. A vehicle service function is determined based on the caller identification number.

In recent years, wireless communication services for automobiles and mobile phones have increased greatly in the variety and number, along with the concomitant demands on telematics service call centers. A call center needs to be able to process requests in a timely fashion and find more efficient and automatic ways to respond to a service request. The processing of a service request may require a large amount of dedicated resources including the time of human and virtual advisors, modem time, and additional software applications used by the advisors for processing requests. Examples of subscriber requests that may benefit from an increased level of automation are user requests for running electronic diagnostics, locating a vehicle, unlocking a car door, honking a horn, or flashing headlights.
However, even with the use of virtual advisors, resources may be overextended and as the requests to a call center increase, the call center may be unable to process all the service requests successfully or it may need longer time to finish the process. Customers may be put on hold and service may be delayed.
It would be beneficial to have an alternative approach to request common and potentially automatic services such as the unlocking of doors. Ideally, this mechanism would be as effective as and more efficient than the current processing of service requests. An improved service request method would allow the user to call from any dial-tone phone, increase the throughput of caller traffic, and save phone-connection time. It would also allow service requests to be processed in more than one manner. The method would avoid the need to queue or deny the request based on the availability of modem lines and advisors, simplify the service request process, and increase the quality of service of the call center.
It is an object of this invention, therefore, to provide a method for initiating a service request to a mobile vehicle, and to overcome the deficiencies and obstacles described above.

Method of initiating a telematics service


Brushing apparatus for cleaning and polishing farm produce includes three rotating cylindrical helical brushes forming a brush channel. The brushes rotate in the same direction but at different speeds to clean and polish the produce, and to "walk" it along the brush channel. The brush bristles are the only things touching the produce, and the sole way by which produce is moved along the brush channel. The brushes and brush channel are adjustable up or down from the horizontal to control the throughput rate of articles of produce.

This invention relates to brushing apparatus for cleaning and polishing certain vegetables, particularly pumpkins and various species of squashes.
Pumpkins and squashes grow on vines lying on plowed ground, so they are often partially covered or caked with dried mud. Cleaning and polishing this produce greatly enhances its marketability. The aesthetic appeal of produce which is both cleaned and polished is striking.
In the prior art generally, large articles of produce such as pumpkins and squashes are typically cleaned by hand with a brush, hose, cloth or the like; or else they are simply left in their natural state. Smaller articles such as apples and cucumbers are cleaned by brushers in which the produce moves over a series of horizontally and laterally aligned brushes. This type of brusher is not effective for cleaning larger articles of produce, such as pumpkins and squashes, typically between 6" and 18" diameter.
Prior art includes U.S. Pat. Nos. 3,451,088 to Germann; 1,732,180 to Brogden; 4,827,836 to Neidigh; 2,249,787 to Savage; 4,509,414 to Chiu. All these are of record in my earlier applications referred to above.
Germann discloses a bowling ball cleaner with three rotating cylindrical brushes forming a brush channel. The brush channel is inclined downward from entrance to exit, so that the ball moves downhill along the brush channel by gravity. The brushes all rotate at the same speed so as to get the ball spinning. The spinning ball is caused to leave the brush channel so as to brush against stationary sidewall buffing surfaces.
Brogden discloses a fruit cleaner with a pair of rotatable cylindrical brushes, one on each side of a conveyor belt. The conveyor belt drives a number of scrub brushes longitudinally between the cylindrical brushes. Brogden states that the brush rolls slope downward gently from the receiving end of the washer, but they may be arranged to slope in the opposite direction or with no slope at all. This statement is not explained, but it does not relate to throughput speed control, since produce is driven through the apparatus by the conveyor belt, not by the side brush rolls.
Neidigh discloses a produce peeler with rotating cylindrical rollers. Produce is pushed through the apparatus by a positive displacement device (an auger) which also controls the throughput speed of the apparatus. The several rollers rotate at different speeds to enhance the peeling effect.
Savage discloses a potato peeler in which potatoes move axially along abrasive rollers. The rollers are inclined downward from inlet to discharge, and the potatoes move along by gravity.
Chiu discloses a produce peeler with transverse rollers and longitudinal conveyor belts to move articles of produce over and across (not along) the rollers. The produce moves downhill from the inlet end to the discharge end. The incline of the apparatus affects the rate with which articles tumble over and across the transverse rollers, and is adjustable to control dwell time. In Chiu, articles tumble laterally over rollers. In the present invention, articles travel lengthwise in a brush channel.
Neidigh, Savage, and Chiu are devices for invasive treatment of produce (peeling, stemming, etc.). They all involve impact such as tumbling, abrasion, scraping, and the like. The impact is necessary to achieve the desired peeling or stemming action, but is acceptable because these devices are preparing the produce for immediate further processing, such as canning or freezing.
In all of these prior devices, articles are moved along and through the apparatus either by gravity or by a positive displacement device.

Brushing apparatus for cleaning and polishing pumpkins and the like


A method for generating an uncertainty characterization for a system simulation model, including obtaining system simulation input, wherein the system simulation input comprises a cache simulation output, generating one of the group consisting of a deterministic uncertainty model and a stochastic uncertainty model, using the cache simulation output and the system simulation model for at least one system input configuration, and generating the uncertainty characterization for the system simulation model using one of the group consisting of the deterministic uncertainty model and the stochastic uncertainty model.

Generally, a microprocessor operates much faster than main memory can supply data to the microprocessor. Therefore, many computer systems temporarily store recently and frequently used data in smaller, but much faster, cache memory. Many computers use multi-level cache memory systems, where there are many levels of cache, e.g., level one (L1), level two (L2), level three (L3), etc. L1 cache typically is closest to the microprocessor, smaller in size, and faster in access time. Typically, as the level of the cache increases (e.g., from L1 to L2 to L3), the level of cache is further from the microprocessor, larger in size, slower in access time, and supports more microprocessors.
Cache memory architecture may vary in configuration, such as cache size, cache line size, cache associativity, cache sharing, method of writing data to a cache, etc. Cache size refers to the total size of the cache memory. The cache memory is configured to store data in discrete blocks in the cache memory. A block is the minimum unit of information within each level of cache. The size of the block is referred to as the cache line size. The manner in which data is stored in the blocks is referred to as cache associativity. Cache memories typically use one of the following types of cache associativity: direct mapped (one-to-one), fully associative (one-to-all), or set associative (one-to-set).
Cache sharing refers to the manner in which data in the blocks are shared. Specifically, L1 cache sharing is the number of processors (physical or virtual) sharing the L1 cache, i.e., the number of L1 caches sharing one L2 cache; and the number of L2 caches sharing one L3 cache, etc. Most program instructions involve accessing (reading) data stored in the cache memory; therefore, the cache associativity, cache sharing, cache size, and cache line size are particularly significant to the cache architecture.
Likewise, writing to the cache memory (cache write type) is also critical to cache architecture, because the process of writing is generally a very expensive process in terms of process time. Cache memory generally uses one of the following methods when writing data to the cache memory: "write through, no-write allocate" or "write back, write allocate."
The performance of the cache architecture is measured using a variety of parameters, including a miss rate (either load or store), a hit rate, an instruction count, an average memory access time, etc. The miss rate is the fraction of all memory accesses that are not satisfied by the cache memory. There are a variety of miss rates, e.g., intervention, clean, total, "write back," cast out, upgrade, etc. In contrast, the hit rate is the fraction of all memory accesses that are satisfied by the cache memory. The instruction count is the number of instructions processed in a particular amount of time. The average cache access time is the amount of time on average that is required to access data in a block of the cache memory.
Simulation is a useful tool in determining the performance of a particular cache architecture (i.e., a particular cache size, cache line size, cache associativity, etc.). Simulation of a cache memory may be implemented using a computer system. Thus, given a workload trace (a set of sequences of program instructions linked together, which are executed by microprocessors that emulate sets of typical instructions) and the cache architecture, the performance, e.g., hit/miss rates, of the cache architecture may be simulated.
Simulation of the cache architecture typically involves dealing with certain constraints. For example, for a given set of cache architectural components, including a range of possible measurements for each cache architectural component, the number of permutations to fully simulate the cache architecture may be very large, thus introducing a possible constraint upon cache simulation. Also, there are often additional constraints when using simulation. For example, a trace characterizing each level of the number of processors of interest is required. However, some traces may be absent, or short traces that provide realistic scenarios do not sufficiently "warm-up" large cache sizes, i.e., a trace may not be long enough for the simulation to reach steady-state cache rates. In addition, uncertainty in benchmark tuning is another example of constraints in simulation. Additionally, in the interest of time and cost, usually only a small sample set of cache architectures is simulated.
Once the simulation is performed on the small sample set of the cache architecture, statistical analysis is used to estimate the performance of the cache architectures that are not simulated. The quality of the statistical analysis relies on the degree to which the sample sets are representative of the sample space, i.e., permutations for a given set of cache architectural components. Sample sets are generated using probabilistic and non-probabilistic methods. Inferential statistics along with data obtained from the sample set are then used to model the sample space for the given architectural components. Models are typically used to extrapolate using the data obtained from the sample set. The models used are typically univariate or multivariate in nature. The univariate model is analysis of a single variable and is generally useful to describe relevant aspects of data. The multivariate model is analysis of one variable contingent on the measurements of other variables. Further, the models used to fit the data of the sample set may be smoothed models obtained using a plurality of algorithms.
System model simulators are often used in designing computer system architectures. For example, closed queuing networks may be used to create a logical network that models the handling of memory requests made by microprocessors of a multi-processor computer system. A memory request takes a route through the logical network, where the route taken by the memory request is determined in part by inputs to the system model simulator.
FIG. 1 shows the system model simulator (30), which generates a system model output (32) that may be used to predict performance and to help resolve architectural tradeoffs. An input to the system model simulator (30) is workload characteristics, which is generally a cache simulation output (34). The system model simulator (30) also has other inputs (36), which are often fixed, such as cache and memory latencies, or bus widths.
The cache simulation output (34) includes cache operational parameters in the form of rates per instruction for the multi-level cache hierarchy, including a load miss rate, a store miss rate, a load write back rate, and other rate per instruction parameters of the multi-level cache hierarchy. For example, the cache simulation output for a typical cache memory architecture may have a store miss rate of 0.37% and a load miss rate of 0.71%.
Factors such as cache simulation constraints (e.g., benchmark tuning, trace collection, trace warm-up, etc.) may introduce uncertainties into the cache simulation output (34). For example, traces for simulating different set of inputs for different configurations (e.g., for different numbers of microprocessors or for different cache sizes) are often collected by different experts in potentially different settings. The system model output (32) may be affected by such input uncertainties, i.e., uncertainties included in the cache simulation output (34).

Method and apparatus for determining output uncertainty of computer system models


Semiconductor devices and methods for fabricating the same are disclosed in which an amorphous layer is formed in an interface between a device isolation layer and a source or drain region to stably thin a silicide layer formed in the interface. A leakage current of the silicide layer formed in the interface between the device isolation layer and the source/drain region is reduced.

Due to a recent trend toward high integration in semiconductor memory devices and CMOS image sensors, geometric structures in these semiconductor devices and components therein have necessarily changed.
FIG. 1 is a cross sectional view of a prior art thin film transistor. As shown in FIG. 1, a prior art semiconductor device includes an active region AR and a field region FR in a silicon semiconductor substrate 1. A device isolation layer 2 is formed in the field region FR.
The device isolation layer 2 may be formed in an LOCOS process by forming an oxidation-resistant insulating layer in the field region FR, and by selectively performing a thermal-oxidation process on the oxidation-resistant insulating layer. Alternatively, the device isolation layer 2 may be formed in a sequential process of forming an oxidation-resistant insulating layer in the active region AR, forming a trench by selectively removing the semiconductor substrate in the field region FR, forming an oxide layer to fill the trench, and selectively removing the oxide layer to expose the surface of the semiconductor substrate by a CMP process, wherein the device isolation layer 2 is formed in the trench.
Next, the semiconductor device, for example, the thin film transistor 10, is formed in the active region AR. That is, the thin film transistor 10 is formed with a gate insulating layer 11 and a gate electrode 12, by sequentially depositing and selectively removing portions of the gate insulating layer 11 and a conductive layer on the semiconductor substrate 1.
Subsequently, an insulating layer is deposited on the entire surface of the semiconductor substrate 1. This insulating layer is anisotropically etched to form sidewall-insulating layers 13 on opposite sidewalls of the gate electrode 12. Next, impurity ions are implanted into the active region AR of the semiconductor substrate 1 on opposite sides of the gate electrode 12 while using the gate electrode 12 and the sidewall-insulating layers 13 as a mask to thereby form source/drain regions 14.
Next, a metal line (not shown) is formed on the semiconductor substrate 1. A silicide layer 15 is then formed on the surfaces of the source/drain regions 14 to enhance the electric contact with the source/drain regions 14.
In the above described thin film transistor structure, the silicide layer 15 is formed in a sequential process of depositing a refractory metal on the entire surface of the semiconductor substrate 1, and then performing a thermal process thereon. As a result, the silicide layer 15 is formed on the surface of the source/drain regions 14 at an interface between the silicon semiconductor substrate 1 and the refractory metal. If the gate electrode 12 is formed of silicon, the silicide layer 15 is also formed on the surface of the gate electrode 12.
However, when the thermal process is performed on the refractory metal on the entire surface of the semiconductor substrate 1 to form the silicide layer 15 on the surface of the source/drain regions 14, a silicide layer 15a is also formed in the interfaces between the device isolation layers 2 and the source/drain regions 14. That is, ions of the refractory metal penetrate into the interfaces between the device isolation layers 2 and the source/drain regions 14. As a result, silicide layers 15a are formed in the interfaces between the device isolation layers 2 and the source/drain regions 14.
The device isolation layer 2 and the source/drain regions 14 are formed of different materials, at different thickness, and in different surface states. Therefore, it is difficult to maintain a uniform thickness of the silicide layers 15a formed in the interfaces between the device isolation layers 2 and the source/drain regions 14 without an additional process. Furthermore, the silicide layers 15a formed in the interfaces between the device isolation layers 2 and the source/drain regions 14 may cause a leakage current, thereby deteriorating the quality of the resulting semiconductor device.
Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

Semiconductor devices and methods for fabricating the same including forming an amorphous region in an interface between a device isolation layer and a source/drain diffusion layer


A method for processing data includes generating one or more binary results based on one or more inputs and receiving one or more of the binary results. One or more conditional carryout signals may then be generated based on one or more of the binary results. The method also includes communicating one or more of the conditional carryout signals via one or more propagate cells. One or more carryout signals may be generated and received. A sum may then be generated based on the received carryout signals, the sum being communicated to a next destination.

Data processing architectures have grown increasingly complex in data communication and data processing systems. Some data processing systems may include one or more pieces of logic that are configured to provide some result or to produce a selected output for a designated input. When arranged properly, these logic elements and components provide valuable tools for data processing systems that seek to generate a result quickly and accurately based on incoming information or data.
One drawback associated with some data processing architectures is that they suffer from slow processing speeds. This is often caused by a deficiency in one or more objects that cause components or logic elements to stagnate while waiting for a resultant value to be received before proceeding to a next step in a processing operation. This delay may inhibit system performance as logic elements are forced to wait for results before being able to execute their respective tasks.
In attempting to address issues relating to speed, it is critical that space allocations for a corresponding integrated circuit are not sacrificed. Positioning a series of components or elements in a data processing system that address speed, but that occupy an excessive amount of integrated circuit space, does not provide a feasible solution. Thus, the ability to provide a fast and accurate data processing system while simultaneously minimizing space allocation for an integrated circuit, provides a significant challenge to designers and manufacturers associated with data processing systems.

System and method for generating a binary result in a data processing environment


A semiconductor structure comprises a transistor element formed in a substrate. A stressed layer is formed over the transistor element. The stressed layer has a predetermined tensile intrinsic stress of about 900 MPa or more. Due to this high intrinsic stress, the stressed layer exerts considerable elastic forces to the channel region of the transistor element. Thus, tensile stress is created in the channel region. The tensile stress leads to an increase of the electron mobility in the channel region.

1. Field of the Invention
The present invention relates to the formation of integrated circuits, and, more particularly, to the formation of field effect transistors having a channel region with a specified intrinsic stress to improve the charge carrier mobility.
2. Description of the Related Art
Integrated circuits comprise a large number of individual circuit elements such as, e.g., transistors, capacitors and resistors. These elements are connected internally to form complex circuits such as memory devices, logic devices and microprocessors. The performance of integrated circuits can be improved by increasing the number of functional elements in the circuit in order to increase their functionality and/or by increasing the speed of operation of the circuit elements. A reduction of feature sizes allows the formation of a greater number of circuit elements on the same area, hence allowing an extension of the functionality of the circuit, and also reduces signal propagation delays, thus making an increase of the speed of operation of circuit elements possible.
Field effect transistors are used as switching elements in integrated circuits. They allow control of current flowing through a channel region located between a source region and a drain region. The source region and the drain region are highly doped. In N-type transistors, the source and drain regions are doped with an N-type dopant. Conversely, in P-type transistors, the source and drain regions are doped with a P-type dopant. The doping of the channel region is inverse to the doping of the source region and the drain region. The conductivity of the channel region is controlled by a gate voltage applied to a gate electrode formed above the channel region and separated therefrom by a thin insulating layer. Depending on the gate voltage, the channel region may be switched between a conductive "on" state and a substantially non-conductive "off" state.
The source region, the drain region and the gate electrode of a field effect transistor in an integrated circuit are connected to other circuit elements by means of contact vias which are formed in a layer of an interlayer dielectric over the transistor. Since the source and drain regions and the gate electrode have different heights, and a surface of the interlayer dielectric is substantially planar, the individual contact vias have different depths. In the formation of the contact vias, a mask is formed on the interlayer dielectric which exposes those portions of the interlayer dielectric where the contact vias are to be formed. Then, an anisotropic etching process is performed. In order to avoid that an etchant used in the etching process affects the transistor, an etch stop layer is provided between the transistor and the interlayer dielectric. The etchant is adapted to selectively remove the interlayer dielectric, leaving a material of the etch stop layer substantially intact. Thus, the etching stops as soon as the etch front reaches the etch stop layer, irrespective of the height of the feature below the contact via.
When reducing the size of field effect transistors, it is important to maintain a high conductivity of the channel region in the "on" state. The conductivity of the channel region in the "on" state depends on the dopant concentration in the channel region, the mobility of the charge carriers, the extension of the channel region in the width direction of the transistor and the distance between the source region and the drain region, which is commonly denoted as "channel length." While a reduction of the width of the channel region leads to a decrease of the channel conductivity, a reduction of the channel length enhances the channel conductivity. An increase of the charge carrier mobility leads to an increase of the channel conductivity.
As feature sizes are reduced, the extension of the channel region in the width direction is also reduced. A reduction of the channel length entails a plurality of issues associated therewith. First, advanced techniques of photolithography and etching have to be provided in order to reliably and reproducibly create transistors having short channel lengths. Moreover, highly sophisticated dopant profiles, in the vertical direction as well as in the lateral direction, are required in the source region and in the drain region in order to provide a low sheet resistivity and a low contact resistivity in combination with a desired channel controllability. Furthermore, a reduction of the channel length may entail a need to reduce the depth of the source region and the drain region with respect to the interface formed by the gate insulation layer and the channel region which may, in some approaches, be achieved by forming raised source and drain regions formed with a specified offset to the gate electrode.
In view of the problems associated with a further reduction of the channel length, it has been proposed to also enhance the performance of field effect transistors by increasing the charge carrier mobility in the channel region. In principle, at least two approaches may be used to increase the charge carrier mobility.
First, the dopant concentration in the channel region may be reduced. Thus, the probability of scattering events of charge carriers in the channel region is reduced, which leads to an increase of the conductivity of the channel region. Reducing the dopant concentration in the channel region, however, significantly affects the threshold voltage of the transistor device. This makes the reduction of dopant concentration a less attractive approach.
Second, the lattice structure in the channel region may be modified by creating tensile or compressive stress. This leads to a modified mobility of electrons and holes, respectively. A tensile stress in the channel region increases the mobility of electrons. Depending on the magnitude of the tensile stress, an increase of the electron mobility of up to 20% or more can be achieved. In an N-type transistor, this leads to a corresponding increase of the conductivity of the channel region. Conversely, compressive stress in the channel region may increase the mobility of holes, thereby providing the potential for enhancing the performance of P-type transistors.
In a method of forming field effect transistors having stressed channel regions according to the state of the art, a layer comprising an alloy of silicon and germanium or an alloy of silicon and carbon, respectively, is introduced into the channel region in order to create a tensile or compressive stress. Alternatively, such a stress-creating layer may be provided below the channel region.
A problem of the method of forming field effect transistors having stressed channel regions according to the state of the art is that the formation of the stress-creating layer requires a considerable modification of conventional and well-approved techniques used for the formation of field effect transistors. For instance, additional epitaxial growth techniques have to be developed and implemented into the process flow in order to form the stress-creating layers. Thus, the complexity of the formation of the transistors is significantly increased compared to the formation of transistors without stress-creating layers in or below the channel region.
In view of the above problem, a need exists for a method allowing creation of desired stress conditions in a field effect transistor without requiring substantial modifications of the manufacturing process.

Method of forming a field effect transistor comprising a stressed channel region