A method of mounting a semiconductor laser component capable of preventing deterioration of laser characteristics and destruction of the semiconductor laser component due to a rise in temperature and a residual stress of the semiconductor laser component. The semiconductor laser component is mounted on a submount by heating and pressure-bonding, and is heated again up to a temperature more than a melting point of a bonding member at the released pressure to release the residual stress.

1. Field of the Invention
The present invention relates to a semiconductor laser device having a semiconductor laser component mounted thereon and a method of mounting the semiconductor laser component on a submount.
2. Description of the Related Art
When a semiconductor laser component is used in systems such as an optical communication system, an optical disk, a laser, a laser-beam printer and the like, such element is packaged suitably for its use. In packaging the semiconductor laser component, a direct bonding method of directly bonding the semiconductor laser component to a component, which is disposed in the package, such as a metal block, a circular stem, and the like can be used. However, since a structure obtained through this method is simple while the heat releasing property of the semiconductor laser component is not good, temperature thereof increases and thus a lifetime of the semiconductor laser component is shortened. For this reason, it is difficult to use the direct bonding method in a high-power semiconductor laser component.
Therefore, in order to solve the above problem, there has been a method for mounting a semiconductor laser component on a submount made of Si or SiC that is excellent in thermal conductivity and processability and also a method for bonding the resultant semiconductor laser device to a package. Recently, a bonding method using a submount having an excellent heat releasing property is widely used.
Now, a conventional method of mounting a semiconductor laser component will be described.
FIG. 1A is a view illustrating processes of mounting a semiconductor laser component, wherein reference numeral 1 indicates a semiconductor laser component, reference numeral 2 indicates a submount, reference numeral 3 indicates a bonding member made of eutectic crystal solder, reference numeral 4 indicates a collet, and reference numeral 5 indicates a heating table. First, as shown in FIG. 1A, the submount 2 is set on the heating table 5 and then the submount is heated up to a temperature of 183° C. or more at which the bonding member 3 on the submount 2 can be melted. In the meantime, the semiconductor laser component 1 is held through vacuum absorption by the collet 4, and is positioned on the mount surface of the submount 2.
Next, as shown in FIG. 1B, after the bonding member 3 is melted, the collet 4 holding the semiconductor laser component 1 descends and the semiconductor laser component 1 mounted on the bonding member 3 of the submount 2 is cooled. At that time, in order to secure sufficient bonding area between the semiconductor laser component 1 and the submount 2 sandwiching the bonding member 3 and to improve the heat conductivity by making the bonding member 3 thin, the semiconductor laser component is pressure bonded on the submount by the collet 4. Next, as shown in FIG. 1C, after the bonding member 3 is completely coagulated, the collet 4 releases the semiconductor laser component 1 and ascends.
The bonding method using the submount enables for the semiconductor laser component to be high-powered. However, the higher-powered semiconductor laser component results in enlargement of the submount, and widening of the bonding area between the semiconductor laser component 1 and the submount 2 sandwiching the bonding member 3.
In this regard, the enlargement of the submount 2 and the widening of the bonding area accompanied with the higher-powered semiconductor laser component have caused the following problems.
A volume of a substance is varied according to variation of temperature, and the rate of change (thermal expansion coefficient) of every substance is different. For this reason, when different substances (for example, semiconductor laser component and submount) are heated to bond to each other, since difference in temperature exists for a time period from the complete coagulation of the bonding member to the recovery to a normal temperature. Thus, a shearing force due to difference in thermal expansion coefficient is generated in the bonded portion and this shearing force causes a residual stress in the substances. Further, the residual stress is varied depending upon sizes and shapes of the substances and the residual stress generated in the semiconductor laser component 1 because of the following reasons increase with the enlargement of the submount 2.
FIGS. 2A to 2D are conceptual views illustrating variation in residual stress depending upon variation in size of the submount 2, in which FIGS. 2A and 2B are an overview and a conceptual view illustrating generation of stress when the submount 2 is small and FIGS. 2C and 2D are an overview and a conceptual view illustrating generation of stress when the submount 2 is large. When the thermal expansion coefficient of the semiconductor laser component 1 is larger than that of the submont, a force acts on the semiconductor laser component 1 in a direction of decreasing the bonding area and a force acts on the submount 2 in a direction of maintaining the bonding area.
When the submount 2 is small as in FIG. 2B, the force of maintaining the bonding area is a shearing force generated when the submount 2 below a bonding surface is compressed. When the submount 2 in FIG. 2D is larger than the submount 2 in FIG. 2B, the force of maintaining the bonding area is the shearing force generated when the submount 2 below the bonding surface is compressed and a shearing force generated when the remaining submount 2 at the periphery of the submount 2 in which the shearing force is generated is tensioned. When the semiconductor laser components 1 have the same size in the two cases, the shearing forces generated when the submount 2 is compressed are equal to each other. Therefore, the large submount 2 has the stronger force of maintaining the bonding area by the shearing force generated due to the tension, and this shearing force becomes stronger with increase in size of the submount 2. For this reason, the larger the submount 2 becomes, the stronger the shearing force acting on the semiconductor laser component 1 becomes. Therefore, the residual stress generated in the semiconductor laser component 1 increases with increase in size of the submount 2. Furthermore, the same is true of the semiconductor laser component 1 having a smaller thermal expansion coefficient.
Furthermore, if the bonding area between the semiconductor laser component 1 and the submount 2 sandwiching the bonding member 3 is made large in order to enhance the heat conductivity, the residual stress of the semiconductor laser component 1 increases for the following reasons. When the semiconductor laser component bonded to other substance is cooled, compression occurs around a center of the bonding surface. For this reason, the farther a place is from the center, the greater the difference in the amount of compression between different substances becomes and thus the shearing force becomes larger. If the bonding area increases, places away from the center are bonded, and thus the shearing force becomes larger than the area ratio. For this reason, the residual stress due to this shearing force increases.
As described above, in order to secure sufficient bonding area between the semiconductor laser component 1 and the submount 2 sandwiching the bonding member 3 and to improve the heat conductivity by making the bonding member 3 thin, the semiconductor laser component is pressure bonded on the submount by the collet 4. However, since the semiconductor laser component 1 and the submount 2 are bonded with the stress generated due to the pressure bonding, the stress due to the pressure bonding remains in the semiconductor laser component 1 even after the release of the pressure bonding by the collet 4. At that time, if the bonding area enlarges, the fluid resistance of the bonding member 3 increases and thus the force required for the pressure bonding increases. For this reason, the residual stress remaining in the semiconductor laser component 1 due to the pressure bonding increases with the enlargement of the bonding area.
In order to improve the heat releasing property, the submount 2 is bonded to the vicinity of a light emitting region of the semiconductor laser component 1. For this reason, the light emitting region is positioned at a position having a high residual stress in the semiconductor laser component 1.
In general, when current flows in the semiconductor laser component 1 by applying a stress of 100 MPa or more to the light emitting region, crystals are transposed, which deteriorates the laser characteristic or destroys the semiconductor laser component 1. This phenomenon occurs when the stress of 100 MPa or more is applied to a part of the light emitting region. In addition, the higher-powered semiconductor laser component 1 makes the residual stress in the light emitting region larger. For this reason, when current flows, the laser characteristic is deteriorated or the semiconductor laser component 1 is destroyed.
However, as described above, since the residual stress of the semiconductor laser component 1 is generated locally due to various causes and the distribution of stress varies due to sizes and shapes of the semiconductor laser component 1, the submount 2 and the collet 4, and the pressing force of the collet 4, etc. Accordingly, there is no correlation between the macroscopic deformation (bending) and the residual stress of the semiconductor laser component 1, which makes it difficult to specify the causes.

Semiconductor laser device and a method of mounting a semiconductor laser component on a submount

Matsushita Electric Industrial Co., Ltd.


A single-player casino-style electronic gaming method and apparatus uses a deck of (simulated) number of cards and wild cards. The number cards each have a number and a color. In response to a wager, a number of, such as seven, cards are displayed to the player. The player may choose to discard any, all or none of the initially-dealt cards. Any discarded cards are replaced, to form a final hand. Prizes are awarded including based on how many cards of the same number and/or how many cards of the same color are in the final hand.

The present invention is directed to a wager-accepting and prize-awarding gaming apparatus and method using a simulated card deck and in particular to a gaming method and apparatus using a deck of number cards.
Casino style gaming terminals (i.e., gaming terminals which are configured to accept coin, token or other monetary wagers and to payout prizes for winning outcomes) have been used to implement numerous types of games including, slot machine games and numerous types of simulated card games (i.e., games in which images of various playing cards are displayed, typically on an LCD or other display device). One of the more popular such gaming terminals is configured for playing any of a variety of (simulated) poker-style games including, commonly, five card draw poker. In general, the nature of poker games has made it somewhat straightforward to implement most features of a card-based poker game in an electronic form, with relatively few modifications of the poker game. For example, although there are many variations of poker in both card versions and electronic versions, it is relatively straightforward (and has proved relatively popular) to provide an electronic version which, compared to a card version of five card draw poker, uses the same number of cards (52) the same type of play (drawing to improve a dealt hand), with the same cards in the deck, and the same types of items constituting relatively higher or desirable hands, including pairs, three of a kind, full house, straights and flushes. The major difference has been providing for single-player gaming, with prizes based on a paytable in the electronic version, but with most of the other features of the card version remaining intact.
From the point of view of a casino or other game operator, the success or usefulness of a particular electronic gaming method and apparatus can be measured in terms of a rate of wagering, i.e., how many wagers are placed, on average, on a given gaming terminal, per day (or other time period). In general, success, in these terms, is affected by a factor such as the attractiveness or popularity of the game with the gaming public (affecting, e.g., how long a gaming terminal remains idle) and the rapidity of game play, i.e., how frequently new wagers are placed. Without wishing to be bound by any theory, it is believed that rapidity of wagering can be affected by the gaming public""s perception of the difficulty or simplicity of playing the game and/or how strongly a player""s choices (or apparent choices) affect the game outcome. It is believed that at least some members of the public may perceive poker, including electronic poker, as a game involving substantial strategic or other complexity.
Although electronic poker gaming terminals have proved to be relatively successful, it is believed there is a potential for achieving additional success with electronic gaming terminals which implement gaming methods that are perceived by the public as being relatively simpler games, compared with electronic poker games. Accordingly, it is believed that some members of the potential gaming public will avoid (or limit playing time at) poker terminals and/or will spend substantial time considering strategy (e.g., in making draw choices). Thus, regardless of whether these public perceptions are accurate, it is believed there is at least a segment of the potential gaming public who will tend to lower the average wagering rate on electronic poker machines. Accordingly, it would be useful to provide an electronic casino style simulated card game which provides at least the perception of somewhat simplified gaming play or strategy, compared to the perception often attached to poker gaming devices.
Additionally, it is believed there are segments of the potential gaming public who have had positive experiences with non-poker deck card games and who would be attracted to the electronic games which are reminiscent of such non-poker games. For example, many members of the potential gaming population have had positive gaming experience with games involving number card decks (i.e., decks without face cards). One example of a game played with a number card deck is that available from Mattel Company and sold under the trade name Uno(copyright).
Unfortunately, there does not appear to be a straightforward way of implementing Uno(copyright) as a single player game on a casino style gaming terminal. Many features of the Uno(copyright) game and of the Uno(copyright) card deck itself are related to the interactive, multiple-player nature of Uno(copyright). Indeed, the Uno(copyright) instructions (available, e.g., at http://www.iserb.net/xcx9c/central/games/uno/unorules.html) specify xe2x80x9ctwo to ten playersxe2x80x9d. For example, the Uno(copyright) deck includes a xe2x80x9cdraw twoxe2x80x9d card which requires the next player to draw two cards. The Uno(copyright) deck includes a reverse card which reverses the direction of play among the various players (e.g., clockwise to counterclockwise). The standard Uno(copyright) deck includes a skip card causing the next player to lose a turn. The standard Uno(copyright) deck includes a wild draw-four card which, when played, causes the next player to draw four cards. Another interactive feature of Uno(copyright) relates to the object of the game, which is to be the first, among a plurality of players, to deplete one""s hand.
In addition to the inherently interactive (non-single player) nature of standard Uno(copyright) and of the standard Uno(copyright) deck, the relative length of play, before a win event, is typically relatively long since it requires repeated play, among the players, until one player""s hand is depleted. In at least one version of Uno(copyright), the winner receives points based on the number and type of cards remaining in opponent""s hands and play continues until a player reaches or exceeds 500 points. The relatively slower pace of a standard Uno(copyright) game (compared to, e.g., standard poker play) is thus substantially inconsistent with a desire to provide rapid turnover (and high wagering rates). Further, whereas traditional card-based poker is commonly played in a manner involving wagering and winnings, standard Uno(copyright) rules have no implementation of a wagering or winning system. Accordingly, it would be useful to provide a casino style electronic gaming terminal implementing a game based on a (simulated) number card deck which could be provided as a single-player game, preferably with a relatively high wagering rate.
The present invention includes a recognition of the existence, nature and/or source of problems in previous gaming methods or apparatuses, including as described herein. In one aspect, the present invention adapts a number card deck and/or gaming method, changing it to make it more suitable for single-player electronic gaming. In one embodiment, changes include some or all of reducing the number of cards in a deck, e.g., by eliminating skip, reverse or other cards more directed to multiple-player games, changing the object of the game, e.g., from a hand-depletion object to a high-score hand object, changing game play, e.g., from play involving matching a number or card from a previous discard, to a play involving drawing for the purpose of providing desirable or winning combinations, compatible with a relatively larger hand of the type associated with certain previous number card games; providing for receiving wagers and awarding pay-outs, e.g., based on a paytable which accommodates a relatively larger number of cards in a hand and the like.
Preferably, game play according to the present invention uses a (simulated) card deck of a type similar to card decks which, it is believed, potential players consider less complicated or strategic than, e.g., what may be commonly associated with poker games, such as providing cards which have numbers and colors, or which include wild cards, (but without face cards), but which nevertheless provides a relatively fast-paced game (e.g., compared to a standard Uno(copyright) game), thus creating an environment in which relatively high wager rates are more likely.

Electronic gaming method and apparatus using simulated number card deck


A flash electrically erasable programmable read only memory (EEPROM) cell fabricated in a semiconductor substrate. A first well region having a first conductivity type is located in the semiconductor substrate. A second well region having a second conductivity type, opposite the first conductivity type, is located in the first well region. A non-volatile memory transistor and an independently controllable access transistor are fabricated in the second well region. The non-volatile memory transistor and the access transistor are connected in series, such that the source of the access transistor is coupled to the drain of the non-volatile memory transistor. The first well region, the second well region, the non-volatile memory transistor and the access transistor are biased such that electrons are transferred from the first well region to a floating gate of the non-volatile memory transistor by Fowler-Nordheim tunneling during an erase mode, and electrons are transferred from the floating gate of the non-volatile memory transistor through the access transistor by Fowler-Nordheim tunneling during a program mode. None of the biasing voltages exceed 12 Volts, thereby enabling the flash EEPROM cell to operate in a 3.3 Volt system. In one embodiment, an array of flash EEPROM cells are fabricated in the second well region.

1. Field of the Invention
The present invention relates to a flash electrically erasable programmable read only memory (EEPROM) cell. More specifically, the present invention relates to a flash EEPROM cell for use in low-voltage, high-speed, high-density applications, such as in complex programmable logic devices (CPLDs).
2. Related Art
FIG. 1 is a cross sectional view of a conventional EEPROM cell 10, which includes p-type substrate 9, field isolation regions 11, floating gate transistor 12 and select gate transistor 13. EEPROM cell 10 is described in U.S. Pat. No. 5,471,422 by Chang et al. Floating gate transistor 12 includes n+ type source region 20, n+ source/drain region 22, tunnel dielectric 14, floating gate 16, interlayer dielectric layer 29, and control gate 28. Select gate transistor 13 includes n+ source/drain region 22, n+ drain region 24, gate dielectric layer 26, select gate 18 and interlayer dielectric layer 29.
In operation, EEPROM cell 10 is programmed, erased and read in accordance with the Table 200 illustrated in FIG. 2.
To program EEPROM cell 10, a programming voltage of 16 to 20 Volts is applied to drain region 24 and select gate 18, while control gate 28 is grounded (and source region 20 is left floating). Under these conditions, electrons tunnel from floating gate 16 through tunnel dielectric 14 to drain region 24, thereby leaving floating gate 16 positively charged.
To erase EEPROM cell 10, a programming voltage of 16 to 20 Volts is applied to control gate 28, while source region 20, select gate 18 and drain region 22 are connected to ground. Under these conditions, electrons tunnel from the channel region of floating gate transistor 12 through tunnel dielectric 14 to floating gate 16, thereby creating a negative charge on floating gate 16.
To read EEPROM cell 10, the V.sub.cc supply voltage of about 5 Volts is applied to select gate 18, a voltage of about 1 Volt is applied to drain region 24, and control gate 28 and source region 20 are connected to ground. A sense amplifier is used to detect the current between source region 20 and drain region 24. A high current indicates a programmed cell and a low current indicates an erased cell.
FIG. 3 is a circuit diagram of EEPROM cell 10 coupled to a plurality of identical EEPROM cells 10A-10G to form an array. The source regions of these EEPROM cells are commonly connected, thereby limiting this array to use in memory applications, and prohibiting the array from being used in a CPLD application. In CPLD applications, each column of cells needs to have separate source and drain bit lines, so that a feedback voltage may be applied to the source bit lines to limit the total read current in the event that a large number of cells are simultaneously turned on in the same column.
The programming voltage of 16 to 20 Volts required to program and erase EEPROM cell 10 is a relatively high voltage. As lower V.sub.cc supply voltages are implemented (e.g., 3.3 Volts or 2.5 Volts) it becomes difficult, if not impossible, to generate such high programming voltages.
In addition, as the V.sub.cc supply voltage is reduced from 5 Volts to 3.3 Volts, the minimum geometry of the fabricated devices is typically reduced from 0.6 &m to 0.35 &m and smaller. The isolation between individual devices is achieved by relatively thick regions of oxide. The thickness of this oxide is limited by the patterning capabilities of the optical photoresist technology to about 4000 .ANG. for a 0.35 &m process. An isolation oxide of 4000 .ANG. provides adequate isolation for voltages of up to approximately 12 Volts. Such an isolation oxide is therefore inadequate to isolate devices when using a programming voltage of 16 to 20 Volts. As a result, a programming voltage of 16 to 20 Volts cannot be used in devices which are fabricated using a 0.35 &m process.
It would therefore be desirable to have a flash EEPROM cell that operates in response to a V.sub.cc supply voltage of 3.3 Volts or lower, and can be programmed and erased with on-chip voltages that are limited to 12 Volts or less.
Another two-transistor memory cell is described in more detail in U.S. patent application Ser. No. 08/722,645 entitled "Two Transistor Flash EPROM Cell" by Anders T. Dejenfelt, Kameswara K. Rao and George H. Simmons, filed Sep. 27, 1996. However, the programming mechanism of this memory cell is hot-electron channeling, which requires relatively a high supply voltage (i.e., 5 Volts) and relatively high programming currents.
U.S. Pat. No. 5,432,740 by D'Arrigo et al. describes an EEPROM memory cell having a merged pass transistor. This memory cell is not well suited for use in a high speed CPLD for two reasons. First, during a read operation, selected word lines are biased at a voltage of +5 Volts, and non-selected word lines are biased at a voltage of -5 Volts. Switching a word line therefore involves a voltage swing of 10 Volts. A relatively long time period is required to complete a switching operation having such a large voltage swing. As a result, the switching time for the word lines of the memory cells of D'Arrigo are undesirably long, thereby rendering the memory cells impractical for use in a high speed CPLD.
In addition, within a CPLD, multiple rows of memory cells can be simultaneously enabled. In contrast, only a single row of memory cells is enabled at any given time within a conventional memory array. It is therefore possible for many more word lines to be simultaneously switched in a CPLD. If the memory cells of D'Arrigo were used in a CPLD, a relatively large number of associated word lines could be switched at any given time. However, it is impractical to build a charge pump having the capacity to supply the current required to simultaneously switch a large number of word lines between -5 Volts and +5 Volts.
Accordingly, it would also be desirable to have a flash EEPROM cell structure that can be coupled in an array to form a high-speed device, such as a CPLD.

Two transistor flash EEprom cell and method of operating same


An oxide etch process that is highly selective to nitride, thereby being beneficial for a self-aligned contact etch of silicon dioxide to an underlying thin layer of silicon nitride. The process uses difluoromethane (CH.sub.2 F.sub.2) for its strong polymer forming and a greater amount of trifluoromethane (CHF.sub.3) for its strong etching, and with a high diluent fraction of argon (Ar). The etch process is performed at a low pressure of about 20 milliTorr in a high-density plasma etching chamber.

In the fabrication of silicon integrated circuits, the continuing increase in the number of devices on a chip and the accompanying decrease in the minimum feature sizes have placed increasingly difficult demands upon many of the many fabrication steps used in their fabrication including depositing layers of different materials onto sometimes difficult topologies and etching further features within those layers.
Oxide etching has presented some of the most difficult challenges. Oxide is a somewhat generic term used for silica, particularly silicon dioxide (SiO.sub.2) although slightly non-stoichiometric compositions SiO.sub.x are also included, as is well known. The term oxide also covers closely related materials, such as oxide glasses including borophosphosilicate (BPSG). Some forms of silicon oxynitride are considered to more closely resemble a nitride than an oxide. Oxide materials are principally used for electrically insulating layers, often between different levels of the integrated circuit. Because of the limits set by dielectric breakdown, the thickness of the oxide layers cannot be reduced to much below 0.5 to 1 .mu.m. However, the minimum feature size of contact and via holes penetrating the oxide layer is being pushed to well below 0.5 .mu.m. The result is that the holes etched in the oxide must be highly anisotropic and must have a high aspect ratio of the depth to the minimum width of the hole. A further problem arises from the fact that the underlying silicon may be formed with active doped regions of thicknesses substantially less than the depth of the etched hole (the oxide thickness). Due to manufacturing variables, it has become impossible to precisely time a non-selective oxide etch to completely etch through the silicon oxide without a substantial probability of also etching through the underlying active silicon region.
The anisotropy can be achieved in dry plasma etching in which an etching gas, usually a halocarbon, is electrically excited into a plasma. The plasma conditions may be adjusted to produce highly anisotropic etching in many materials. However, the anisotropy should not be achieved by operating the plasma reactor in a pure sputtering mode in which the plasma ejects particles toward the wafer with sufficiently high energy that they sputter the oxide. Sputtering is generally non-selective, and high-energy sputtering also seriously degrades semiconducting silicon exposed at the bottom of the etched contact hole.
In view of these and other problems, selective etching processes have been developed which depend more upon chemical effects. A sufficiently high degree of selectivity allows new structures to be fabricated without the need for precise lithography for each level.
An example of such an advanced structure is a self-aligned contact (SAC), illustrated in the cross-sectional view of FIG. 1. A SAC structure for two transistors is formed on a silicon substrate 10. A polysilicon gate layer 12, a tungsten silicide barrier and glue layer 14, and a silicon nitride cap layer 16 are deposited and photolithographically formed into two closely spaced gate structures 18 having a gap 20 therebetween. Chemical vapor deposition is then used to deposit onto the wafer a substantially conformal layer 22 of silicon nitride (Si.sub.3 N.sub.4), which coats the top and sides of the gate structures 18 as well as the bottom 23 of the gap 20. The nitride acts as an electrical insulator. Dopant ions are ion implanted using the gate structures 18 as a mask to form a self-aligned p-type or n-type well 24, which acts as a common source for the two transistors having respective gates 18. The drain structures of the transistors are not illustrated.
An oxide field layer 24 is deposited over this previously defined structure, and a photoresist layer 26 is deposited over the oxide layer 24 and photographically defined into a mask so that a subsequent oxide etching step etches a contact hole 28 through the oxide layer 24 and stops on the underlying nitride layer 22. It is called a contact hole because the metal subsequently deposited into the contact hole 28 contacts silicon rather than a metal layer. A post-etch sputter removes the portion of the nitride layer 22 at the bottom 23 of the gap 20. The silicon nitride acts as an electrical insulator for the metal, usually aluminum, thereafter filled into the contact hole 28.
Because the nitride acts as an insulator, the SAC structure and process offer the advantage that the contact hole 28 may be wider than the width of the gap 20 between the gate structures 18. Additionally, the photographic registry of the gate structures 18 with the contact hole 28 need not be precise. However, to achieve these beneficial effects, the SAC oxide etch must be highly selective to nitride. That is, the process much produce an oxide etch rate that is must greater than the nitride etch rate. Numerical values of selectivity are calculated on the ratio of the oxide to nitride etch rates. Selectivity is especially critical at the corners 29 of the nitride layer 22 above and next to the gap 20 since the corners 29 are the portion of the nitride exposed the longest to the oxide etch and have a geometry favorable to fast etching.
Furthermore, increased selectivity is being required with the increased usage of chemical mechanical polishing (CMP) for planarization. CMP is sensitive to wafer waviness with the effect that a flat oxide surface over a wavy substrate results in an oxide of significantly varying thickness. As a result, the time of the oxide etch must be set significantly higher, say by 100%, than the etch of the design thickness to assure penetration of the oxide. This is called over etch, which also accounts for other variations. However, for the regions with a thinner oxide, the nitride is exposed that much longer to the etching environment.
Ultimately, the required degree of selectivity is reflected in the probability of an electrical short between the gate structures 18 and the metal filled into the contact hole 28. However, scanning electron micrographs (SEMs) of the etched structure of FIG. 1 quickly reveal if an excessive amount of nitride is being removed. The etch must also be selective to photoresist, for example at facets that develop at the mask corners, but the requirement of photoresist selectivity is not so stringent since the photoresist layer 26 may be made much thicker than the nitride layer 22.
Blalock et al. have disclosed a SAC oxide etch process in U.S. Pat. No. 5,286,344. Their sole detailed example using an etching gas of relative composition is given in TABLE 1, as near as can be understood. Note, however, that the percentages sum to greater than 100%.
TABLE 1 ______________________________________ Relative Gas Amount ______________________________________ CF.sub.4 16% CHF.sub.3 9% CH.sub.2 F.sub.2 20% Ar 57% ______________________________________
They use a plasma reactor having two opposed capacitor plates. The lower capacitor plate supports the wafer, and 500 W of RF power is applied to the lower plate. The upper plate and the rest of the chamber are grounded. Static or low-frequency induction coils are placed to the side of the chamber to apply 500 gauss of nearly static magnetic field to the plasma. That is, the process is magnetically enhanced reactive ion etching. The etching gas is maintained at a chamber pressure of 200 milliTorr. Blalock et al. achieve a nitride selectivity of 30:1 and an etch rate of 400 nm/min. The selectivity is satisfactory, but the etch rate is considered to be low. Adopting the recipe of Blalock et al. to an advanced etcher utilizing a high-density plasma is problematic.
In the future, the most demanding etching steps are projected to be performed with high-density plasma (HDP) etch reactors. Such HDP etch reactors achieve a high-density plasma having an ion density of 10.sup.11 cm.sup.-3 and above across the plasma exclusive of the sheathes. Although several techniques are available for achieving a high-density plasma are available such as electron cyclotron resonance and remote plasma sources, the commercially most important technique involves inductively coupling RF energy into the source region. The inductive coil may be cylindrically wrapped around the sides of chamber or be a flat coil above the top of the chamber or represent some intermediate geometry. An example of such an inductively coupled etch reactor is illustrated in the cross-sectional view of FIG. 2 and represents the IPS Etch Reactor available from Applied Materials, Inc. of Santa Clara, Calif. and described by Collins et al. in U.S. patent application Ser. No. 08/733,544, filed Oct. 21, 1996. As shown in FIG. 2, a wafer 30 to be processed is tightly supported on a cathode pedestal 32 supplied with RF power from a first RF power supply 34. The RF power applied to the pedestal 32 creates a DC self-bias field at the edge of the plasma next to the wafer 30. A silicon ring 36 surrounds the pedestal 32 and is controllably heated by an array of heater lamps 38. A grounded silicon wall 40 surrounds the plasma processing area. A silicon roof 42 overlies the plasma processing area, and lamps 44 and water cooling channels 46 control its temperature. The temperature-controlled silicon ring 36 and silicon roof 42 scavenge fluorine from the fluorocarbon plasma. Processing gases are supplied from a plurality of gas sources 47 and are controlled by respective mass flow controllers 48 before being combined and injected into the chamber through a top gas feed 50 formed in the roof 42. The top gas feed 50 has a showerhead dispensing structure including a distribution cavity and fifteen 250 .mu.m holes through the silicon roof 42 connecting the cavity to the chamber. An unillustrated vacuum pumping system connected to a pumping channel 52 around the lower portion of the chamber maintains the chamber at a preselected pressure.
In the used configuration, the silicon roof 42 is grounded, but its semiconductor resistivity and thickness are chosen to pass generally axial RF magnetic fields produced by an inner inductive coil stack 56 and an outer inductive coil stack 58 powered by respective RF power supplies 60, 62. However, a single RF power supply with an adjustable power splitter may be used. These coils 56, 58 inductively couple RF energy into the plasma source region spatially removed from the wafer 30. Thereby, the pedestal biasing is decoupled from the plasma generation.
It has become recognized, particularly in the use of HDP etch reactors, that selectivity in an oxide etch can be achieved by a fluorocarbon etching gas forming a polymer layer upon the non-oxide portions, thereby protecting them from etching, while the oxide portions remain exposed to the etching environment. It is believed that the temperature controlled silicon ring 36 and roof 42 in the reactor of FIG. 2 controls the fluorine content of the polymer, and hence its effectiveness against etching by the fluorocarbon plasma, when the polymer overlies a non-oxide. However, this mechanism seems to be responsible for at least two problems if high selectivity is being sought. If excessive amounts of polymer are deposited on the oxide or nitride surfaces in the contact hole being etched, the hole can close up and the etching is stopped prior to complete etching of the hole. This condition is referred to as etch stop.
Further, the chemistry may be such that the polymer formation depends critically upon the processing conditions. It may be possible to achieve high selectivity with one set of processing conditions, but very small variations in those parameters may be enough to substantially reduce the selectivity on one hand or to produce etch stop on the other. Such variations can occur in at least two ways. The conditions at the middle of the wafer may vary from those at the center. Furthermore, the conditions may change over time on the order of minutes as the chamber warms up or on the order of days as the equipment ages or as chamber parts are replaced. It is felt that hardware can be controlled to no better than .+-.5 or 6%, and a safety margin of 3 to 6 is desired. Mass flow controllers 48 are difficult to control to less than .+-.1 sccm (standard cubic centimeter per minute) of gas flow so gas flows of any constituent gas of only a few sccm are prone to large percentage variations.
These factors indicate that a commercially viable etch process must have a wide process window. That is, large variations in gas composition should produce only minimal changes in the resultant etching.
Several oxide etch processes have been proposed which rely upon higher-order hydrogen-free fluorocarbons and hydrofluorocarbons, both generically referred to as fluorocarbons. Examples of higher-order fluorocarbons are fluoroethane, fluoropropane, and even fluorobutane, both in its linear and cyclic forms. In U.S. Pat. No. 5,423,945, Marks et al. disclose an oxide etch selective to nitride using C.sub.2 F.sub.6 in an HDP etch reactor having a thermally controlled silicon surface. Later process work with the IPS chamber of FIG. 2 has emphasized C.sub.4 F.sub.8 as the principal etchant species. Many of the higher-order fluorocarbons and hydrofluorocarbons are not readily available, especially in semiconductor-grade purity. Furthermore, their toxicity may be unproven, necessitating close review prior to their large-scale use. Even their environmental effects may need further understanding. Hence, it is more desirable to use the already popular fluoromethanes, which include carbon tetrafluoride (CF.sub.4), trifluoromethane (CHF.sub.3), difluoromethane (CH.sub.2 F.sub.2), and monofluoromethane (CH.sub.3 F).

Self aligned contact etch using difluoromethane and trifluoromethane


A microwave melting furnace for treating a liquid, comprising an upper furnace body, a lower furnace body, means disposed to the upper furnace body for supplying material to be treated, a crucible disposed in the lower furnace body, means for detecting the position for the upper surface of the material to be treated supplied into the crucible and a controller for stopping the means for supplying the material to be treated depending on a detection signal from the detection means. The liquid supplied to the crucible can be surely prevented from overflowing automatically.

1. Field of the Invention
The present invention concerns an improvement for a microwave melting furnace for or treating liquid.
2. Description of the Prior Art
Heating and melting treatment for non-metal materials by utilizing a dielectric heating phenomenon caused by the irradiation of a microwave has been generally used with an aim of disposing various kinds of industrial wastes and radioactive wastes in the form of liquid or slurry as a so-called volume reduction or recovery of variable materials. The treatment by the irradiation of the microwave is conducted by introducing a microwave from a microwave oscillator by way of a waveguide tube to the inside of a furnace, matching the microwave by a tuner disposed in the upper portion and the waveguide tube portion at the inside of the furnace, as well as supplying materials to be treated such as incinerated ashes or sludges to the inside of a heating and melting crucible (generally made of metal).
In the microwave melting furnace, a metal crucible is mounted in a furnace body for heating the material to be treated and the material to be treated is supplied continuously into the crucible or charged by a predetermined amount and heated and melted batchwise. A microwave heating and melting furnace of the prior art has a constitution, for example, as shown in FIG. 6. In the figure, an upper furnace body 2 and a lower furnace body 3 are joined to each other by means of a flange 30 in a sealing structure, and the lower furnace body 3 is supported by a jack 4 on a wagon 40. The upper furnace body 2 has a metal waveguide tube 9 connected for introducing microwaves generated from a microwave oscillator not illustrated and also has a hopper 7 supplied by way of a screw feeder 8 for storing material to be treated such as incineration ashes. A protection vessel 5 is mounted at the inside of the lower furnace body 3 and a crucible main body 1 inside of the protection vessel 5 being supported by a flange 10 formed at the upper end thereof. The crucible main body 1 and the protection vessel 5 can be detached easily from the lower furnace body 3 by raising them upward, respectively.
In the constitution described above, the material to be treated containing a salt such as NaNO.sub.3 dissolved in a liquid or a liquid such as a sludge suspended therein is treated as shown below.

Microwave melting furnace for treating liquid


A method for processing heating wire of aquarium heater and an aquarium heater made by the method. The method includes a step of prior to sealing the heating wire, coating the heating wire with a thin insulative voltage-resistant and heat-resistant layer, whereby even though the outer protective skin of the heater is broken and water infiltrates therethrough, the insulative layer can still effectively avoid leakage of electricity and ensure safety. The aquarium heater includes: a heating wire wound on a heat-resistant insulative medium, the heating wire being processed and coated with an insulative layer of vaseline prior to sealing; a conductive metal wire connected to two ends of the heating wire; and an outer insulative protective skin coated on the heating wire and the conductive wire. The heating wire is electrically connected with the metal wire without using any terminal and the outer protective skin is integrally coated on surfaces of the heating wire, conductive metal wire and the adjoining section therebetween.

The present invention relates to a method for processing heating wire of aquarium heater and an aquarium heater made by the method. Prior to sealing, the heating wire is previously coated with a thin insulative voltage-resistant and heat-resistant layer, whereby even though the outer protective skin of the heater is broken and water infiltrates therethrough, the insulative layer can still effectively avoid leakage of electricity.
It is known that infiltration of water and leakage of electricity often take place in the conventional aquarium heater. In manufacturing, in order to avoid leakage of electricity, the heater is watertightly wrapped by multiple layers of insulative skins. In a conventional single-tube type aquarium heater, the adjoining section between the heating wire and the metal conductive wire is possibly placed in the tube which is sealed by multiple watertight layers. FIG. 8 shows an elongated wire-shaped heater which is coated by multiple insulative skins to achieve a waterproof and insulative effect. FIG. 7 shows a manufacturing method for such heater, in which the heating wire sealed in the heater does not go through any insulative and waterproof processing prior to sealing. After connected with the metal conductive wire, the heating wire is directly placed into the tube or coated by the outer protective skin. Therefore, once the outer waterproof skin is damaged, water infiltration and leakage of electricity will take place.
As shown in FIG. 8, in the elongated wire-shaped heater, the heating wire is wound on a soft heat-resistant insulative wire material (such as fiber glass). Then the heating wire is electrically connected with the conductive wire via a terminal. Then the wires are coated with a protective silicone layer as an insulative skin. In coating procedure, the terminal is first wrapped by an inner high temperature-resistant silicone layer and then further coated with an outer silicone layer Accordingly, a bulge knot will be formed at the terminal. After a long period of use, the knot will suffer bending force and thermal expansion and contraction. Therefore, the protective skin tends to break. This leads to danger of infiltration of water and leakage of electricity. As a result, in use, the knot is prevented from being immerged in water so as to ensure safety.
In addition, in manufacturing, the heating wire and conductive wire must be connected with the terminals one by one and must be wrapped by two insulative layers. This is time-consuming and will increase manufacturing cost.

Method for processing heating wire of aquarium heater and aquarium heater made by the method


A rechargeable battery includes a battery pack, a battery lid, and an electrode and an external terminal connected by an electricity connector. A laminated portion of the electrodes comprising a lump of wound electrodes is separated into two bundle electrode connecting portions from a center side of the wound electrodes in the thickness direction outward of the battery pack. The electricity collector is provided with a main plate joined to the bundles, a rib plate bent from the main plate and extending outward of the battery pack, a mounting plate extending along the inside of the battery lid, and a connecting plate bent from of the mounting plate and extending toward a bottom surface of the battery pack. A coupling plate is inclined from this bottom end of the connecting plate toward the bundles and is coupled to one end of a joint plate on the battery lid side.

A square rechargeable battery including a lump of flat electrodes formed by winding an electrode of an anode which is a foil of an anode coated with an active synthetic material of the anode and an electrode of a cathode which is a foil of a cathode coated with an active synthetic material of the cathode via a separator, electrolyte accommodated in a square battery container, and an external terminal electrically connected to the lump of the flat electrodes is widely known as a battery for driving vehicles (see PTL 1).
At one end portion of the lump of the flat electrodes in a direction of a wound center axis, an anode uncoated portion from which the foil of the anode is exposed without being coated with the active synthetic material of the anode is laminated, and at the other end portion in the direction of the wound center axis of the lump of the flat electrodes, a cathode uncoated portion from which the foil of the cathode is exposed without being coated with the active synthetic material of the cathode is laminated.
In PTL 1, a structure in which an electricity collector having a substantially V-shape in cross section is inserted into the interior of the lump of the flat electrodes, the uncoated laminated portion of the lump of the flat electrodes is divided into two parts and bundled respectively, and the respective bundles are connected to the electricity collector is proposed.


A decorative accessory for tub and shower enclosures comprises a shelf extending along the top of a tub and shower enclosure for supporting potted plants, decorative pots and accessories, and other decorative items. The shelf comprises a plurality of transversely extending brackets and a plurality of longitudinally extending slats which are separated by slots to facilitate drainage. In the case of a tub and shower enclosure having a head piece the shelf is supported thereon by slots formed in the bottom of the bracket which engage the head piece. In the case of a tub and shower enclosure comprising a shower curtain and a shower curtain support rod, the shower curtain support rod and the rings which support the shower curtain therefrom extend through the slot formed in the bottoms of the brackets of the shelf.

Modern homes and apartments are typically provided with bathing facilities comprising a tub, a shower, or a combination thereof. In most instances the bathing facility is provided with an enclosure which prevents spray from the shower from escaping and possibly damaging the surrounding floor and walls. Heretofore, tub and shower enclosures have typically been undecorated, and have therefore been relatively utilitarian in appearance. Tub and shower enclosures, furthermore, typically lack sufficient provision for placement of items that may be used in a shower, but which should preferably remain dry, until needed, such as extra bars of soap, razors, towels, toiletries and the like.
Therefore, what is needed is a decorative accessory adaptable for use with a tub and shower, which accessory also provides for placement of items useable in connection with a shower, but which would preferably remain dry, at least until needed.


A processor having a plurality of processing elements and a decoder operable to decode an instruction. Each of the plurality of processing elements includes: a transfer pattern storage unit operable to store a transfer pattern value that indicates a processing element from which data is transferred; a transfer unit operable to perform a data transfer from the processing element indicated by the transfer pattern value; and an update unit operable to update the transfer pattern value stored in the transfer pattern storage unit, in accordance with a result of decoding a latest instruction by the decoder.

(1) Field of the Invention
The present invention relates to a parallel operation processor which is suited to process a large amount of data such as image data, audio data, or communication data.
(2) Description of the Related Art
In recent years, SIMD (Single Instruction stream Multiple Data Stream) processors have been widely used in the field of image, audio or communication processing. The SIMD processors have a plurality of processing elements and cause them to perform a parallel operation. To efficiently perform various processing such as image processing, it is important for such a SIMD processor to transfer data between the processing elements efficiently. Also, to perform a data transfer between two given processing elements, it is important how "network pattern values" are set. The "network pattern value" indicates, for each processing element, a processing element from which data is transferred. That is to say, the "network pattern value" indicates a data transfer pattern on a "processing element to processing element" basis.
Some conventional SIMD processors do not set the network pattern values by limiting the data transfers to, for example, only between adjacent processing elements, without performing data transfers between given processing elements. However, if data transfers between given processing elements are not performed freely, the restricted data transfer narrows down the application range of the SIMD processors, and deprives the SIMD processors of fully realizing the performance it provides for various purposes. Also, if data transfers between given processing elements can be performed freely, it is necessary to specify an immediate value, as a network pattern value, in an operand of an instruction to ensure free data transfers for each cycle. Here, suppose that 16 processing elements are provided in a SIMD processor, and that a network pattern value is to be indicated using a four-bit processing element number. It is then necessary to specify an eight-byte (=4×16 bits) immediate value in an operand of an instruction. This requires a transfer instruction having an eight-byte immediate value to be input to the SIMD processor each time the transfer pattern changes. For this reason, conventional SIMD processors require a large size of code to be programmed. This has increased the size of the memory for storing the program.

Parallel operation processor utilizing SIMD data transfers


A method of making a laminated structure includes forming a first lamination having first and second conductive layers having inner and outer surfaces and being spaced apart by a dielectric layer, drilling through the first conductive layer and dielectric layer to form a blind via having a bottom coexistent with the inner surface of the second conductive layer, plating the blind via with a conductive material, and patterning the second conductive layer to form at least one contact pad over the blind via.

Multi-layered modules or packages are in widespread use in the semiconductor industry to mechanically support and electrically connect integrated circuit chips. Modules can be configured to mount a single chip or multiple chips, thus giving rise to the designations "SCM" for single chip modules and "MCM" for multi-chip modules.
A module supplies the chip with signals and power, and performs other functions such as heat removal, physical support and protection from the environment. Another important function is simply to redistribute the tightly packed I/Os of the chip to the I/Os of a printed wiring board.
A typical module, whether a SCM or MCM, is made of multiple layers of alternatingly arranged dielectric and conductive layers. The conductive layers are patterned, typically using photolithographic techniques, and adjacent conductive layers can be electrically connected by forming vias through the dielectric layers. These connections enable the interconnection of a chip to its package, and the package to a corresponding printed wiring board (PWB). Proper via formation is thus an important aspect of building multi-level metal systems used to make packaging.
In many chip packaging techniques, bonding pads are formed on the outer surfaces of the package over vias to facilitate chip/package/PWB connections. Bonding pads of the package must be precisely formed and accurately positioned to ensure proper electrical and mechanical connection. Moreover, where solder balls are formed on the bonding pads, such as in flip-chip packaging, properly formed bonding pads are a prerequisite to a well formed solder ball.
A known method of forming a bonding pad/solder ball connection is shown in FIG. 1. A blind via is formed by drilling a laminated substrate 10 from the outer surface-side of the substrate. The drilling step removes material from the upper-most dielectric layer 12 to form a slightly tapered recess. Next, the recess is plated with conductive material using any of the deposition techniques that are well known in the microelectronic fabrication art. The plated recess is then filled with a conductive filler material 14.
The filler material must be leveled to be coplanar with the outer surface of the outer conductive layer 16. A solder ball 18, formed on the conductive layer 16, is then used to connect the substrate 10 to an integrated circuit chip 20. The area under the solder ball 16 is patterned to form a bonding pad.
While the above process makes an adequate connection, it is relatively difficult and costly to level the filler in the blind via to make it co-planar with the conductive layer 16. If the blind via is not completely filled, contaminants can become entrapped causing problems in later soldering operations.
Another technique for forming circuit interconnects, illustrated in FIG. 2, involves forming through vias 22 in a laminated substrate 24, plating the vias, and then forming via capture pads 26 on top of the vias 22. Separate chip attach capture pads 28 are connected to respective ones of the via capture pads 26. The chip attach capture pads 28 provide an area to attach the chip solder balls (not shown). In this arrangement, the via capture pads are covered by a solder mask (not shown) to prevent solder from flowing down the through vias 22.
Although the separate capture pads 26 are commonly used, they take up a large amount of space, thus limiting the ability to route signal lines between the pads, as shown by the broken-line directional arrows "A" and "B" of FIG. 2. These arrows represent restricted routing channels and thus a limitation on the wiring density of the package.

Method and apparatus for improving wireability in chip modules


An automotive tail light. An LED emits its light laterally. A reflection part surrounding the LED picks up the light and reflects it towards the light dish. A low height light is thus provided.

In a known lamp of this kind (DE 195 47 861), an incandescent lamp is arranged in the housing behind the light disk in a larger chamber and an LED behind a light-conducting element in a smaller chamber. The LED emits towards the light disk. The reflection part is arranged in front of the LED. Hence, the lamp has a corresponding structural depth.

Schefenacker Vision Systems Germany GmbH


A VR integrated machine and a running method thereof are provided. The VR integrated machine includes a heat generating device, a heat conducting member and thermoelectric conversion member, the heat conducting member is connected with the heat generating device, the thermoelectric conversion member has a first end connected with the heat conducting member, and is configured to generate electrical energy and to supply the electrical energy to the UR integrated machine.

A Virtual Reality (VR) technology is a computer simulation technology that can have a virtual world created and experienced, and use a computer to generate a simulation environment, which is a systematic simulation of multi-source information fusion of interactive three-dimensional dynamic view and physical behavior, so that users are immersed in the environment. Existing VR apparatuses are mainly divided into two types: one is a VR integrated machine in which a mainboard, a battery, a display lens, and other parts and components are all provided in a main body of the apparatus; the other is a VR split machine, in which a processing unit thereof generally employs an external host, a computer with a high-performance processor is usually used, and an entire VR system is powered by an external power source.
Wherein, in order to achieve a good picture effect, the VR integrated machine needs to have a high-performance processor provided to process image information, and the high-performance processor generates a large amount of heat, so that an internal temperature of the VR integrated machine is increased, and meanwhile, the high-performance processor consumes a large amount of electrical energy, resulting in low endurance of the battery carried by the VR integrated machine itself.

VR integrated machine and running method thereof

BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.


A method, system, and computer program product are disclosed for diagnosing and recovering from I/O subsystem errors. A data processing system includes a computer which includes a power subsystem and at least one I/O subsystem. A determination is made that an error occurred in the I/O subsystem. Registers in integrated circuits included within the I/O subsystem are accessed utilizing the power subsystem in order to diagnose the error while the I/O subsystem is in an error state.

1. Technical Field
The present invention relates generally to an improved data processing system, and in particular to a method, system, and product for diagnosing and recovering from errors utilizing a data processing system's power subsystem. Still more particularly, the present invention relates to diagnosing and recovering from I/O subsystem errors utilizing a data processing system's power subsystem.
2. Description of Related Art
Many different types of errors may occur in a computer system. Some of these errors are difficult to diagnose and repair because the information that is stored in the computer system that would help in the diagnosis, such as the contents of certain registers, is inaccessible as a result of the error.
Input/output (I/O) adapter errors in particular may be difficult to diagnose without specialized debug software and may be difficult to recreate remotely at the manufacturer's site. I/O errors are difficult to diagnose due to the layout of the planars. There can be over ten PCI devices and it is nearly impossible to isolate a problem down to one adapter. In many cases, once one PCI device causes an error, it will cause several side effect errors from other PCI devices.
Currently, major bugs at a customer's site are difficult to debug. One current approach is to execute an operating system dump and hope to find and debug the problem back at the manufacturer's site.
In order to correctly diagnose an I/O error, the extended register information of the I/O chips is necessary. We must be able to gather the extended register information to diagnose the state of each device at the time of failure.
Therefore, a need exists for a method, system, and product for diagnosing and recovering from I/O subsystem errors utilizing a data processing system's power subsystem.

Method, system, and product for utilizing a power subsystem to diagnose and recover from errors

International Business Machines Corporation


The process for applying labels to articles by first adhering a limited portion of the label to the article and subsequently rendering additional portions of the label adhesive so that they will adhere to the article after the label is affixed to the article. The leading and trailing edges of the label may be bonded to the article or each other to affix the label to a container or other such article. The portions of the label between the leading and trailing edges may be either provided with an adhesive agent that is in a non-adhesive state or be formed from a label material which is not normally adhesive but can be rendered adhesive through an additional process step. For example, coated polyethylene film can be applied to a container by means of a hot melt adhesive and then subsequently heated to a temperature at which the polyethylene material becomes adhesive causing it to stick to the container. Other labeling materials can be printed with an adhesive that remains substantially non-adhesive until heated or activated by means of radiation, application of a chemical activating agent or by application of mechanical force.

Articles are labeled to identify the contents of containers and provide attractive point of sale product presentation. Labels are applied by roll-fed, sleeve, or cut and stack methods. Different labeling materials have been developed including paper labels, film labels, laminated film and paper labels, styrene foam, and laminated film and foam. The appearance of labeled containers can be improved by shrinking plastic label material to fit tightly around the container and even follow the contours of a container to provide an enlarged billboard appearance.
Generally, labels are either spot-adhered to articles or are applied as pressure sensitive labels. Pressure sensitive labels generally are completely coated with an adhesive material and are one of the most expensive labeling options. Labels are also applied to containers by adhesive applied immediately prior to labeling. The adhesive may be applied in a variety of patterns including leading and trailing edge, spaced dots, picture frame, or overall adhesive.
In some applications, the minimum amount of adhesive is desired, particularly if a container is to be recycled. The prior art has failed to provide an inexpensive and effective labeling process that minimizes the use of adhesives, solvents, or complex welding mechanisms.
Other applications are better suited to a fully adhered label for an article or container. Generally, the more adhesive that is applied to a label, the greater the likelihood that the label will develop wrinkles or surface distortions. Distortions can also be caused by heat shrinking label material over the top of adhesive spots.
One application where a completely adhesive surface is desirable is where a label is to be applied over a previously printed can. Such a process would make it possible to use cans that have an outmoded decoration. By fully adhering a label to an overlabeled container, removal of the label can be substantially prevented or impeded.
Another situation where a fully adhesive label is desirable is in the labeling of containers that undergo a pasteurization process. For example, in breweries, bottles are pasteurized after filling by placing them in hot water or steam which can cause labels to peel off the containers or create bubbles and wrinkles under the label.
Another situation wherein fully adherent labels would provide an advantage is in the use of thin stretchable labels. For example, inexpensive polyethylene or polypropylene labels can be produced that offer many excellent characteristics for labeling but are elastic and can stretch. If a thin film label could be made to adhere directly to the article or container, problems relating to label stretch after application to the container could be eliminated.
One prior art approach to providing a fully adhesive label for cans was proposed in Canadian Patent No. 1,012,906 to Germiat. The Germiat patent proposed using a coextruded label material wherein a extruded layer of surlyn was provided to act as an adhesive. Both the label material and can to be labeled were heated in the Germiat method while the label was being applied to cause the label to become adhesive and fully adhere to the container. Disadvantages associated with the Germiat label were that the adhesive did not always activate uniformly which could lead to wrinkles or bubbles forming between the container and label, especially after pasteurization.
In another unique labeling application, heat is used to shrink labels over the contours of containers as is disclosed in U.S. Pat. No. 4,704,173 which issued to Hoffman. With shrink labeling, as proposed in the Hoffman patent, the leading and trailing edges of the label have hot melt adhesive applied thereto in a generally vertical line at the leading and trailing edges of the label. The balance of the label is preferably free of adhesive so that the label can shift as it shrinks without causing wrinkling of the label material. While the wrap shrink labeling process of the Hoffman patent is popular and effective for many labeling applications, the lack of a full coating of adhesive makes this approach inappropriate for some applications.
The above problems and limitations relating to the prior art are addressed by Applicant's invention as summarized below.

Process for applying labels with delayed adhesive activation


A method of manufacturing semiconductor memory device comprises forming a first wiring layer and a memory cell layer above a semiconductor substrate; forming a plurality of first trenches extending in a first direction in the first wiring layer and the memory cell layer, thereby forming first wirings and separating the memory cell layer; burying a first interlayer film in the first trenches to form a stacked body; forming a second wiring layer above the stacked body; forming a plurality of second trenches, extending in a second direction intersecting the first direction and reaching an upper surface of the first interlayer film in depth, in the first stacked body with the second wiring layer formed thereabove, thereby forming second wirings; removing the first interlayer film isotropically; and digging the second trenches down to an upper surface of the first wirings, thereby forming memory cells.

1. Field of the Invention
The present invention relates to a method of manufacturing semiconductor memory device including memory cells of the cross-point type, and a semiconductor memory device.
2. Description of the Related Art
Electrically erasable programmable nonvolatile memories include a flash memory as well known in the art, which comprises a memory cell array of NAND-connected or NOR-connected memory cells having a floating gate structure. A ferroelectric memory is also known as a nonvolatile fast random access memory.
On the other hand, technologies of processing memory cells much finer include a resistance variable memory, which uses a variable resistive element in a memory cell as proposed. Specifically, known examples include a phase change memory device that varies the resistance in accordance with the variation in crystal/amorphous states of a chalcogenide compound; an MRAM device that uses a variation in resistance due to the tunnel magneto-resistance effect; a polymer ferroelectric RAM (PFRAM) memory device including resistive elements formed of a conductive polymer; and an ReRAM device that causes a variation in resistance on electrical pulse application (Patent Document 1: JP 2006-344349A).
The resistance variable memory may configure a memory cell with a serial circuit of a Schottky diode and a resistance variable element in place of the transistor. Accordingly, it can be stacked easier and three-dimensionally structured to achieve much higher integration as an advantage (Patent Document 2: JP 2005-522045A).
Such the memory cells of the cross-point type may be manufactured as aligned with line patterns through a self-aligned process. In this case, first, processing trenches extending in a first direction with a certain line-and-space (hereinafter referred to as "L/S") is applied to a stacked body including a lower wiring layer and a memory cell layer stacked thereon to form a plurality of first trenches, thereby separating the stacked body by the first trenches. Thereafter, an interlayer insulator film of SiO2 is buried in the first trenches, and an upper wiring layer is formed thereon. Then, processing trenches extending in a second direction orthogonal to the first direction with a certain L/S is applied to the upper wiring layer and the stacked body with the interlayer insulator film buried therein to form a plurality of second trenches reaching the upper surface of the lower wiring layer in depth, thereby forming the memory cells of the cross-point type between mutually orthogonal lines.
In the above-described manufacturing process, however, it is difficult to achieve a selection ratio of 1:1 between the material for forming the memory cell layer and SiO2 for forming the interlayer insulator film. Therefore, at the time of forming the second trenches, etching advances in the memory cell layer more than the interlayer insulator film. As a result, the residual interlayer insulator film serves as a mask to leave the residue of the memory cell material beneath the side wall of the interlayer insulator film, which may possibly cause a short between adjacent memory cells as a problem.

Method of manufacturing semiconductor memory device, and semiconductor memory device


A battery unit includes a battery having an anode including an anode current collector tab, a cathode including a cathode current collector tab, and an electrolyte disposed between the anode and the cathode. The battery is sealed by packaging material such that portions of the anode current collector tab and the cathode current collector tab extend past the exterior of the packaging material. The extended portions of the anode current collector tab and the cathode current collector tab are secured to the exterior of the packaging material to reinforce the extended portions.

1. Field of the Invention
The present invention relates to batteries and, more particularly, to batteries including current collecting tabs.
2. State of the Art
In recent years, workers in the battery art have begun to understand the advantages of manufacturing batteries that have polymer electrolytes and sheet-like anodes and cathodes. The advantages of such so-called "thin package" batteries include lower battery weight than comparably-sized batteries that employ liquid electrolytes, longer service life, relatively high power densities, relatively high specific energies, and the elimination of danger due to the spillage of acidic liquid electrolytes.
Anode and cathode materials used in such batteries may be poor conductors of electricity. Thus, in fabricating such batteries, it is generally necessary to connect an anode to an anode current collector and a cathode to a cathode current collector so that electric energy can be efficiently drawn from the battery by an external load. In most of these batteries, current collectors are electrically connected to each anode and each cathode. Because it is generally an objective, in designing such batteries, to make a small, light-weight, yet powerful battery, it is desirable to keep the size and weight of the current collectors to a minimum. The small, light-weight current collectors are generally electrically connected to external loads by known electrical connectors. Often, connections formed with connectors such as alligator clips and the like damage the current collectors and result in poor performance of the battery. It is desirable, therefore, to provide a battery unit having a strong current collector arrangement.

Battery unit with reinforced current collector tabs and method of making a battery unit having strengthened current collector tabs


A flow control valve unit includes a pressurized fluid inlet, a pressurized fluid outlet, a pressurized fluid chamber in which is positioned a stationary seat member, a partition member dividing the pressurized fluid chamber into a first section in constant communication with the inlet and a second section that communicates with the outlet via a center opening in the stationary seat member, an orifice for communicating said first and second sections to each other, and a through hole formed in the partition member. A movable rod is positioned within the pressurized fluid chamber and extends through the through hole in the partition member. The movable rod has a sealing portion at one end for opening and closing the center opening in the stationary seat member during movement of the stationary member. A spring is operatively associated with the movable rod for urging the movable rod in a direction which causes the sealing portion to close the center opening. A movable magnetic body is disposed in the first section and is operatively connected to the movable rod, and an electric coil is provided for generating a magnetic force that urges the movable rod via the movable magnetic body in a direction to cause the sealing member to move away from and open the center opening.

Japanese Patent Application Laid-Open No. Hei 6-241342 discloses an electromagnetic switching valve unit that is employed in an anti-lock brake system, a brake traction control system or the like of an automotive vehicle to automatically control brake fluid pressure applied to the wheels of the vehicle. The disclosed electromagnetic switching valve unit is relatively compact and inexpensive, and capable of decreasing the rate of change of brake fluid pressure to a certain extent by starting and stopping energization of an electric coil in a time dependent manner. This valve is opened or closed at a relatively high speed when energization of the electric coil is started or stopped. Therefore, when the valve is closed, there is a possibility of noise being generated by the brake fluid flowing through the valve or a sealing portion and a seat member of the valve that collide with each other. Because this type of conventional electromagnetic switching valve unit is unable to change the brake fluid pressure at a sufficiently low speed, it cannot be employed in a control system that requires brake fluid pressure to be changed quite gently, for example a system for controlling the distance between a travelling vehicle equipped with the system and a preceding travelling vehicle.
A flow control valve unit such as that disclosed in Japanese Patent Application Laid-Open No. Hei 3-223578 can be employed in a system that requires brake pressure to be changed quite gently. However, this flow control valve unit possesses certain drawbacks in that it is bulky and expensive, and requires energization of an electric coil to be controlled in an analogue manner with the aid of PWM (pulse width modulation) or the like.

Flow control valve unit including electric coil actuated rod


A system for manufacturing a product includes a mating connector connected to solder pins to provide an electrical conducting path, the solder pins being aligned against solder pads so that each solder pin is thermally and electrically connected to its corresponding solder pad by a solder paste bead. The system also includes a controller to adjust electrical resistive heating of a solder paste bead during a soldering process according to a temperature of the solder paste bead. A method of manufacturing a product includes aligning the solder pins against the solder pads, connecting the mating connector to the solder pins, and heating a solder paste bead by an electrical resistive heating, the solder paste bead undergoing a soldering process, where a temperature of the solder paste bead is being evaluated and the electrical resistive heating is adjusted according to the temperature of the solder paste bead.

A lot of electronic devices are assembled by soldering a number of electronic parts like discrete elements and/or integrated circuits on a printed circuit board. Solder paste beads are printed on metallization pads of the printed circuit board. Afterwards electronic parts are placed on the printed circuit board in a way that corresponding soldering pins or metallization pads of the electronic parts are connected by the solder paste beads with the metallization pads of the printed circuit board. Afterwards the electronic device is heated, so that the solder paste beads undergo a soldering process, solder particles of the solder paste beads melt, coalesce, and build continuous connections between the matching metallization pads of the printed circuit board and the soldering pins or the metallization pads of the electronic components. Modern soldering processes demand close following of time temperature profiles provided by electronic part and/or printed circuit board and/or solder paste vendors throughout the soldering process in order to achieve desired properties of the solder paste beads.

Manufacturing a product using a soldering process

INTERNATIONAL BUSINESS MACHINES CORPORATION


A fixing device for heating and fixing an unfixed image to a record member, including: a heating roller having a core roller and a layer of a resistance heating material formed on an outer or inner peripheral surface of the core roller; a pair of carriers rotatably carrying the heating roller; a pair of ring-shaped current receiver members each located between the carrier and a center of the heating roller, a pair of current supply members being in contact with the current receiver members; and insulating members made of an electrical insulation material, each being in contact with an outer end of the current receiver member and extending toward the carrier, wherein a distance L3 from the inner end of the carrier to the outer end of the current receiver member is 1 mm or more, a sum (L1+L2) of a width L1 of the insulating member and a height L2 of the insulating member from the core roller is 2.5 mm or more, and the distance L3 and the width L1 satisfy a relationship of L3.gtoreq.L1.. A heat-resistant electrical insulation layer may cover the surface of the resistance heating material layer and a temperature sensing element may be provided, a portion of the element being in contact with the heat-resistant electrical insulation layer of the heating roller and covered with a heat-resistant electrical insulation layer. Each of the heat-resistant electrical insulation layers has a breakdown voltage of 3000 V or more.

1. Field of the Invention
The present invention relates to a fixing device for heating and thereby fixing an unfixed image such as a toner image to a record member bearing the unfixed image in an image forming apparatus such as a copying machine, a printer or the like.
2. Description of the Related Art
A fixing device in an image forming apparatus such as a printer or a copying machine generally includes a heating roller for heating and fixing an unfixed image to a record member. The record member bearing the unfixed image such as a toner image is moved between the heating roller and a backup member (generally, a pressure roller) opposed thereto, so that the unfixed image is heated and fixed by the pressure.
In many cases, the heating roller includes a heater such as a halogen lamp heater, and the roller is heated by heat radiated from the heater.
However, the heating roller containing the heater such as a halogen lamp heater as a heat source cannot rapidly heat a surface of the heating roller to a predetermined fixing temperature after start of power supply to the heater, so that a long preheating time (i.e., a warming-up time) is required before the fixing device reaches the predetermined temperature after power-on of the image forming apparatus. This prevents easy operation of the apparatus.
An example of a heating roller, which can reduce a temperature rising time for attaining the predetermined temperature, is proposed in Japanese Laid-Open Patent Publication No. 59-189381 (189381/1984). This roller includes a core roller and a resistance heating member arranged around the core roller for integral rotation. The resistance heating member is made of a substance, which generates heat when an electric current flows therethrough. The heating roller of this type has a good electrothermal converting efficiency, and can rapidly raise the surface temperature of the heating roller to a predetermined temperature after current supply to the resistance heating member, so that the preheating time of the fixing device can be reduced.
In this fixing device employing the above heating roller, the current is generally supplied to the resistance heating member via a current receiver member, which is electrically connected to the resistance heating member and rotates together with the resistance heating member, and a current supply member, which is in contact with the current receiver member. The heating roller is rotatably carried at opposite ends of the core roller by bearings, which are arranged at grounded heating roller mount units at the fixing device.
In the image forming apparatus such as a printer or a copying machine provided with the above fixing device, an openable cover is provided for accessing internal mechanisms when processing is required, e.g., for recovery from paper jamming or various kinds of maintenance. Alternatively, an upper mechanism above a sheet path may be adapted to be pivotable around a hinge arranged at the other half of the image forming apparatus. This type of apparatus is known as an image forming apparatus of a clamshell type.
In these image forming apparatuses provided with the openable cover or of the clamshell type, and particularly, in the image forming apparatus equipped with the fixing device which includes the heating roller having the resistance heating member, it is desired to eliminate a possibility of electric shock, which may be caused when an operator or a serviceman touches the fixing device or the like by opening the cover or the movable unit of the clamshell type of the image forming apparatus for recovery from paper jamming or maintenance. It is also necessary to prevent malfunction or damage of a control unit or the like, which may be caused by electrical leak from the fixing device to various portions of the image forming apparatus.
In view of the above, Japanese Laid-Open Patent Publication No. 4-305679 (305679/1992) has proposed a structure in which an electrical insulation layer interposed between a core roller and a resistance heating member is extended to appropriate positions outside current receiver members near opposite ends of a heating roller. Also, Japanese Laid-Open Patent Publication No. 59-171980 (171980/1984) has proposed a structure in which an electrical insulation layer is formed over an entire surface of a core roller forming a heating roller.
In the structure of the heating roller disclosed in Japanese Laid-Open Patent Publication No. 4-305679, the resistance heating member and the core roller is insulated from each other by the electrical insulation layer. Also, the surface of the resistance heating member is generally covered with a release layer, which also form an insulator. However, particular consideration is not given to insulation between the heating roller and a fixing device housing carrying the heating roller mount units, which may be directly touched by an operator, and particularly between the housing and a current transmission unit connected to the resistance heating member.
The reason of this is as follows. Since the electrical insulation layer insulates the resistance heating member and the core roller from each other, a designer or the like considers that current leak to the core roller is sufficiently prevented and therefore additional insulation is not required.
A current flows to the heating roller mount units in the fixing device and the housing provided with the mount units from the resistance heating member through the core roller, if the above electrical insulation layer is not employed. Even if the electrical insulation layer is provided, a current may flow to the heating roller mount units from the current receiver member, which is provided for current supply to the resistance heating member, via the core roller or directly from the current receiver member via a space.
Particularly, when the image forming apparatus is used in an atmosphere at a high humidity, it is impossible to eliminate completely the possibility of current leak through the above paths. Even if the resistance heating member is insulated from the core roller, current leak, which does not occur at a low humidity condition, may occur at a high humidity condition in the structure where appropriate insulation is not provided between the current receiver member and the core roller, and between the current receiver member and the heating roller mount units. Therefore, electric shock may occur when an operator touches the fixing device housing in the apparatus or a portion electrically connected thereto, and in other words, a possibility of electric shock cannot be eliminated completely.
In the structure disclosed in Japanese Laid-Open Patent Publication No. 59-171980, in which an electrical insulation layer 150 interposed between a resistance heating member 130 and a core roller 100 is arranged over an entire surface of the core roller 100 as shown in FIG. 9, the electrical insulation layer 150 insulates the resistance heating member 130 and the core roller 100 from each other. In this manner, the electrical insulation is provided. Also, the electrical insulation layer 150 arranged over the entire surface of the core roller 100 provides insulation between current receiver members 110 and the core roller 100. In this case, however, the electrical insulation layer 150 is present at up to ends of the core roller 100 attached to bearings, and the surface of the electrical insulation layer 150 may be damaged by a load at an inner surface of the bearing. If damaged, the heating roller cannot rotate stably, and the heating roller itself causes rotational vibration, so that wrinkles are formed at a record member during transfer between the rollers and irregular rotation of the current receiver member 110 occurs. This may result in such a state that a distance between the current receiver member 110 and a roller mount unit 170 at the housing 30 decreases, so that a leak current flows from the current receiver member 110 to the housing 30 through a space.
Generally, in the fixing device employing the heating roller having the resistance heating member described above, a current supply to the resistance heating member is controlled to set the heating roller temperature to a predetermined fixing temperature. Further, the heating roller temperature may be controlled to prevent excessive temperature rising of the heating roller for safety.
For the temperature control of the heating roller, such measures are well known and employed that a temperature sensing element of a contact type such as a thermistor is arranged for the heating roller so as to use sensed temperature information sent from the temperature sensing element for temperature control.
In the image forming apparatus such as a copying machine or a printer including the fixing device, which is provided with the heating roller having the resistance heating member as well as the temperature sensing element for sensing the temperature of the heating roller, and particularly in the image forming apparatus provided with the openable cover or of the clamshell type, there may be arranged a safety switch for immediately interrupting a current circuit to the resistance heating member when an operator or serviceman opens the cover or movable portion in view of the following possibility. When the cover or movable portion is opened, the operator or serviceman may receive an electric shock by touching the resistance heating member, or by touching a circuit or the like connected to the temperature sensing element, if the temperature sensing element is in contact with the resistance heating member via an insulation layer having an insufficient insulating performance.
However, the safety switch is located at a position remote from a power supply inlet portion, and, for example, at one side of the image forming apparatus opposite to the side of a commercial power supply inlet portion in many cases. Therefore, a power supply circuit line to the resistance heating member must be arranged via the safety switch at this remote position, which increases the line length, and therefore requires a large internal space for the long line. This impedes reduction in size of the apparatus and reduction in cost in many cases. Even if the safety switch is not remote from the power inlet portion, the power supply circuit line to the resistance heating member must be arranged through the safety switch, as is required in the above structure, so that a line or wiring for this purpose is required, which impedes reduction in size and cost of the apparatus.
In order to overcome the above problem, the safety switch may be eliminated, and appropriate safety means may be provided for avoiding electrical shock even when an operator touches a circuit or the like connected to the temperature sensing element. However, such appropriate safety means has been neither developed nor considered.
For example, as disclosed in Japanese Laid-Open Patent Publication No. 55-62474 (62474/1980), a resistance heating member may be coated with insulating elastomer having a thermal conductivity, and a temperature sensing element may be in contact with this covering layer. However, this elastomer layer alone cannot assure safety against current leak between the resistance heating member and the temperature sensing element. In a structure where the resistance heating member is arranged at an outer peripheral surface of the heating roller, the resistance heating member is coated with a release layer. This release layer alone cannot assure safety against current leak between the resistance heating member and the temperature sensing element.
In order to improve the safety, the insulating elastomer layer and the release layer may have large thicknesses, in which case responsibility of the temperature sensing element to the temperature of the resistance heating member is impaired, and thus the temperature of the heating roller cannot be controlled precisely.


A hydraulic driver for powering the conditioner mechanism on an agricultural mower-conditioner, the hydraulic driver being powered by the same hydraulic power circuit that powers the cutting mechanism, but which includes controls for varying the speed and/or direction of rotation of the conditioner mechanism independent from the speed of the cutting mechanism.

The present invention relates generally to agricultural mower-conditioner drive components, and more particularly relates to a variable-speed hydraulic drive apparatus for the conditioner rolls in an agricultural mower-conditioner.
Windrower mower-conditioner combinations are well known and typically comprise a cutting mechanism, a conditioning unit, and one or more deflectors to arrange the cut and conditioned crop material into a windrow. The windrower mower-conditioner combination is generally a self-propelled unit, but may also be configured to be propelled by a separate tractor. Typically, a standing crop is cut by a sickle bar or a rotating disc cutting mechanism disposed along a leading edge of the combination. The severed crop material is then directed to a conditioner unit that processes the crop for faster drying. The conditioner unit may comprise a pair of intermeshing rolls that crush the crop material passing therebetween, or a flail that breaks and scratches the crop through impact. For background information on the structure and operation of some typical disc mower-conditioners, reference is made to U.S. Pat. No. 5,778,647, issued to McLean et al., the descriptive portions thereof being incorporated herein by reference.
Disc mower-conditioners normally include one or more hydraulic motors to drive the cutting mechanism. In a disc cutter, the hydraulic motors operate at the same speed as the discs eliminating the need for reduction gearboxes between the hydraulic motors and the cutting discs. It is typical to provide an additional output driven by the hydraulic motor, but which includes a reduction gearbox for driving the conditioner rolls. This approach requires a driveline between the hydraulic drive gearbox output shaft and the conditioner rolls. Furthermore, this approach fixes the relative rotational speeds of the disc cutters and the conditioner rolls through the reduction gearbox and does not allow for independent variations in conditioner roll speed.
Obtaining the most efficient crop conditioning performance requires proper matching of the conditioner mechanism speed to the specific crop conditions. Improper conditioner mechanism speed can have an adverse affect on the way in which crop is fed into the conditioner rolls, the configuration of the resultant windrows, fuel economy, and even the condition of the crop, wherein excessive conditioner roll speed tends to excessively damage the crop material. Varying the conditioner mechanism speed in typical mower-conditioner drives requires changing drive pulleys to alter the drive ratio between the hydraulically-driven gearbox output and the conditioner rolls, an adjustment that cannot easily be performed during operation.
It would be advantageous to have a hydraulic drive for the conditioner mechanism in an agricultural mower-conditioner to reduce the cutting mechanism and conditioner mechanism drivetrain complexity. Further advantages would be realized by providing separate hydraulic drives for the cutting and conditioner mechanism that would allow variation in the relative speed of the two mechanisms thereby enabling each to be individually optimized.

Variable speed hydraulic conditioner drive


A method of chip authentication is presented. The method includes verifying a driver identity. The method also includes establishing a Diffie Hellman key. Further, the method includes hashing the Diffie Hellman key. The method also includes picking a seed. Further, the method includes performing a hardware functional scan with the seed.

This description relates generally to computer security and more specifically to verification methods. Such a system may include any number of components that may be coupled by a variety of interfaces. In such a system an owner of protected content typically seeks verification that sufficient security exists before transmitting content. A chain of trust may be used to establish security in such a system. As the use of these systems increase in security tends to become more of a concern due to the increasing transmission of valuable content, and the fact that unauthorized users tend to become more sophisticated in gaining access to protected content.
A provider of high value content or information may wish to ensure that a conventional open computing system such as a PC is secure. A PC and many processor based systems, typically present an open system in which hardware components may be easily removed and replaced. Such an open system may present multiple access points for unauthorized access to the content.
Like reference numerals are used to designate like parts in the accompanying drawings.

Linking Diffie Hellman with HFS authentication by using a seed