A material of manufacture comprising sub-micron particulate amorphous titanium diboride formed by a process which comprises the steps of forming a powdered reaction mixture of titanium oxide, boron oxide and magnesium, exothermically reacting the reaction mixture in an atmosphere including air to yield a reacted mass containing titanium diboride and magnesia, leaching the reacted mass with a leaching solution having a pH in the range of about 0.5 to about 8, and recovering from the leaching solution sub-micron titanium diboride having a surface area of from about 25 to about 49 m.sup.2 /gm; and a material of manufacture resulting from the hot pressing of the sub-micron particulate titanium diboride material of this invention which has a hardness of from about 2,800 to about 3,400 Knoop, an elastic modulus from about 700 to about 813 GPa, a forming temperature of from about 1500.degree. C. or less, and a grain morphology aspect ratio of from about 2:1 to about 100:1.

This invention relates to the production of titanium diboride and is directed to an improved highly reactive, non-pyrophoric, sub-micron amorphous and/or crystalline titanium diboride powder, and coatings, layers, components, and monolithic shapes made therefrom.
A variety of methods have been developed for producing metal boride powders such as titanium diboride, as follows:
1. Direct combination of the metal with boron or a metal hydride and boron.
2. Hydrogen reaction of a boron halide with a metal source such as an oxide.
3. Electrolysis of a melt consisting of a metal oxide, boron oxide, and an alkali flux.
4. Reduction of a metal oxide with boron (borothermic) or co-reduction with oxide by carbon (carbothermic).
5. Reduction of oxides by metals.
6. Arc-plasma reaction from vapor reactants.
Methods 1-3 are used mainly in laboratory experimentation. Method 4 has been employed commercially but the borothermic method requires large amounts of boron over what the final product contains and is thus too wasteful for high production levels. The carbothermic method, however, is the one generally used to commercially produce titanium diboride. In this method, the raw materials are heated to a temperature in the range of 1800.degree.-2000.degree. C. until titanium diboride is formed. The powdered titanium diboride ultimately recovered requires forming temperatures in about this same range. Method 5 has been attempted but found to produce contaminants of other borides as well as borates and titanates, and has not been considered a commercially viable method. Method 6 produces pyrophoric titanium diboride from expensive reagents.
The principle disadvantages of the above methods are, for 1, expensive raw materials and the likelihood of formation of potentially explosive boranes; for 2-4, expensive raw materials and reaction vessels; for 5, production of contaminant borides, borates and titanates; and for 6, expensive raw materials, reaction vessels and formation of pyrophoric titanium diboride.
The carbothermic method, method 4, is currently being used commercially to produce relatively large grained, crystalline titanium diboride. High temperatures (1800.degree.-2000.degree. C.) are required in the processing; and in order to obtain the product in sub-micron size, final grinding, a source of contamination, is also required. The resultant powdered, sub-micron titanium diboride is crystalline (hexagonal), low in surface area (6m.sup.2 /gm BET), and is difficult to sinter and form into dense shapes. The powder must be vacuum sintered at 2200.degree. C. or hot pressed under high pressure at 1800.degree.-2200.degree. C. Even at carefully controlled processing conditions, micro-stresses are caused by grain growth and thermal expansion of individual crystallites by different amounts in the a and c directions.
Another titanium diboride material disclosed by Byrnestad, U.S. Pat. No. 4,503,021, is an ultra-fine material with a particle size of less than 1/10 of a micron. However, this material has a relatively small surface area and is highly pyrophoric. Other disadvantages of the Byrnestad material include the need for relatively high temperature and pressure in forming dense shapes by hot pressing or sintering. Additionally, the dense shape formed from the Brynestad material has a relatively large grain size, a relatively low modulus of rupture and a relatively low elastic modulus.
A Japanese titanium diboride, Japanese patent No. 089363, is a non-pyrophoric material having a grain size of less than 2.5 microns; however, the Japanese material is produced by using an excess of MgO in the raw materials to control the violent reaction. The resulting MgO/TiB.sub.2 powder is purified by using chloride based leach solutions which can result in a chlorine-contaminated final product. Additionally, the raw materials must be ball milled together prior to reaction, a process which along with adding impurities from the milling Process adds extra time and expense. The resultant TiB.sub.2 must be ultra-centrifuged to remove the supernatant liquid, another processing step adding to the cost. A further disadvantage of the Japanese product is the need to form the product in an inert atmosphere (argon), thus also adding expense.

Material made from highly reactive [sub-micron]amorphous titanium diboride powder and products made therefrom


An example airbag inflator manifold assembly includes a cap portion establishing a plurality of apertures that are operative to communicate flow from an inflator to an airbag interior. A baffle portion redirects at least some of the flow from the plurality of apertures. A mounting face extends radially from the cap portion and is securable to a flange extending radially from the inflator to hold the cap portion and the baffle portion relative to the inflator.

This application relates generally to a manifold for an airbag inflator.
As known, airbags are used in many vehicle occupant protection systems. Typical vehicle occupant protection systems also include an inflator. Chemical reactions within the inflator produce fluid, such as nitrogen gas, that flows into a folded airbag. The fluid unfolds and expands the airbag to a position appropriate for protecting a vehicle occupant. The inflator typically initiates the chemical reaction in response to a signal from a vehicle sensor. Altering characteristics of the flow, such as flow direction and flow speed, filling the airbag can influence how the airbag expands.
Accordingly, some vehicle occupant protection systems include an inflator manifold near the inflator. The inflator manifold influences how the airbag expands by altering characteristics of flow from the inflator to the airbag. The typical inflator manifold is bulky, complex, and difficult to assemble.
Referring to FIGS. 1 and 2, an example prior art manifold assembly 10 includes a cap portion 14 and a separate baffle portion 16. The cap portion 14 includes a sidewall 18 that extends axially away from a flange 20. The sidewall 18 establishes a plurality of apertures 22 that are configured to direct flow F radially outward from an airbag inflator 26 when the cap portion 14 is secured relative to the airbag inflator 26. When assembled, the baffle portion 16 extends axially away from the flange 20 past the apertures 22. The baffle portion 16 directs the flow F from the apertures 22 in axial direction. The baffle portion 16 protects the associated airbag from damage, for example.
In the prior art, the cap portion 14 is press-fit over an upper portion 27 of the airbag inflator 26 to secure the cap portion 14 relative to the airbag inflator 26 at 28. Interference between the sidewall 18 of the cap portion 14 and the airbag inflator 26 holds the cap portion 14 relative to the airbag inflator 26. Prior to press-fitting the cap portion 14, the airbag inflator 26 is machined to remove ridges 30 that interfere with the press-fitting operation. After securing the cap portion 14, the baffle portion 16 is secured directly to a housing assembly (not shown) with mechanical fasteners 32.
Disadvantageously, the sidewall 18 in the prior art is used to both establish the apertures 22 and to secure the cap portion 14 relative to the airbag inflator 26 through the press-fit. This arrangement increases distance the overall height h1 of the sidewall 18 and the baffle portion 16. Also, in the prior art, the baffle portion 16 and the cap portion 14 are both separately secured relative to the airbag inflator 26.


Lamp units for radiating a beam ahead of a vehicle in a light distribution pattern are housed in a lamp body. Illumination of the auxiliary lamp units is controlled based on driving conditions. Illumination control means extinguish light through dimming by gradually decreasing voltage applied to the light sources. When the applied voltage has dropped to a threshold value, the applied voltage is controlled to zero immediately. Compared to when the lamps remaining in an illuminated state are suddenly extinguished, a change in quantity of light is mild, and no uncertainty arises. Below a threshold value where the applied voltage gradually drops to the threshold value and a change may arise in the filament crystalline structure due to annealing at a transition temperature, the applied voltage approaches zero. Hence, the filament does not pass from the transition temperature while being rapidly cooled, thus avoiding filament crystalline structure change.

1. Technical Field
The present invention relates to a multiple-light-type vehicle headlamp system including a headlamp, the headlamp being constructed of a plurality of lamp units housed in a lamp chamber, or a headlamp formed from one or more lamp units housed in a lamp chamber as well as from an auxiliary lamp disposed in the vicinity of the headlamp. More specifically, the present invention relates to a vehicle headlamp system constructed such that the quantity of light emitted ahead of a vehicle is controlled by subjecting the quantity of light radiated from at least one lamp unit to dimming control in the former case in accordance with the driving conditions, or by subjecting the quantity of light radiated from at least one lamp unit and/or the auxiliary lamp to dimming control in the latter case in accordance with the driving conditions.
2. Background of the Related Art
In the related art, a vehicle headlamp system is constructed to enable selective switching between a low-beam light distribution pattern and a high-beam light distribution pattern. The related art vehicle headlamp system having a fixed configuration of the respective low and high light distribution patterns encounters difficulty in emitting a beam in an appropriate light distribution pattern in accordance with driving conditions.
For this reason, as described in, Japanese publication JP-UM-A-2-17364, the contents of which is incorporated herein by reference, a proposed vehicle headlamp system emits a beam in a light distribution pattern corresponding to the driving conditions, by causing lamp units to illuminate in an appropriate combination corresponding to the driving conditions. In this related art system, a lamp body houses multiple lamp units that emit beams ahead of a vehicle in a predetermined light distribution pattern.
Moreover, Japanese publication JP-A-11-45606, the contents of which is incorporated herein by reference, discloses a proposed related art vehicle headlamp system that enables an increase or decrease in the quantity of light radiated from the respective lamp units housed in the lamp body through the driver's manual operation.
However, in the foregoing related art vehicle headlamp system, some of the lamp units are extinguished or re-illuminated in accordance with the driving conditions. Therefore, there arises a problem of the chance of the driver feeling uncertainty due to a sudden drop in the driver's view field, or the chance of drivers of oncoming vehicles or pedestrians feeling uncertainty (e.g., a false recognition of occurrence of passing operation). For example, but not by way of limitation, when the vehicle is viewed from the outside, some of the lamp units are suddenly extinguished and be come partially dark. Therefore, there also arises a problem of poor appearance of the lamp.
As shown in Japanese publication JP-A-2001-270383, the contents of which is incorporated herein by reference, a solution to "the driver of interest, drivers of oncoming vehicles, and pedestrians feeling uncertainty" and a "a partial drop in the internal light of the lamp body deteriorating the appearance of the lamp" is proposed by configuring a vehicle headlamp system so that the quantity of light of at least some of the plurality of lamp units housed in the lamp body can be adjusted by dimming means and, in accordance with the driving conditions (e.g., the amount of rotation of a steering wheel as detected by a steering angle sensor), a control unit automatically drives the dimming means, to increase or decrease the quantity of light radiated from a predetermined lamp unit.
However, in the foregoing related art technique, the headlamp system performs dimming control such that the auxiliary lamp unit gradually shifts from a steady illuminated state to an extinguished state by housing, in a lamp body, an auxiliary lamp unit, such as a bend lamp or a cornering lamp, along with a high beam lamp unit and a low beam lamp unit, and gradually decreasing the amount of power (an effective value of an applied voltage, hereinafter called an "applied voltage") fed to a light source (a halogen valve) of the auxiliary lamp unit in accordance with the driving conditions (e.g., the amount of rotation of a steering wheel). However, such a configuration induces a related art problem of deformation of a filament of the valve (i.e., the halogen valve) of the auxiliary lamp unit to be dimmed, thereby shortening the life of the valve.
To determine, the cause of this related art problem, an H8 valve (having a normal rated power of 12 volts and 35 watts) was subjected to a continuous illumination test, a blinking test (simple blinking, dimming performed at the time of extinction), and a voltage switching illumination test. Results such as those shown in FIGS. 9 and 10 were obtained.
Further, as shown in FIG. 11A, in the simple blinking test in which feeding power to the valve and suspension of power feed were alternately performed at intervals of five seconds (a voltage of 14 volts and a voltage of 0 voltage were applied to the filament of the valve at intervals of five seconds), the life of the valve (a feeding time accumulated until a rupture occurs) dropped slightly as shown in FIGS. 9 and 10 (a). However, for continuous illumination in which a given voltage (14 volts) is continuously applied to the valve, no deformation in the filament was observed.
As shown in FIG. 11B, in the blinking test (a dimming operation performed at the time of extinction) in which feeding power to the filament and suspension of power feed were alternately performed at intervals of five seconds to gradually decrease the amount of power (applied voltage) over a period of about two seconds (one second or 0.5 seconds) during suspension of power feed, thereby shifting the valve to an extinguished state, the filament was deformed as shown in FIGS. 9 and 10 (b). The life of the valve was shortened. Particularly, the lower the dimming speed (i.e., the longer the filament is cooled), the greater the deformation of the filament, and the shorter the life of the valve.
As shown in FIG. 11C, in the voltage switching illumination test in which alternating power supply was fed to the valve such that the voltage applied to the valve was switched between 14 volts and 6 (7, 8, 9, 9.5, and 10) volts at intervals of five seconds, when alternating power supply involving a minimum applied voltage of 6 volts (7 volts, 8 volts, 9 volts or 9.5 volts) was fed as shown in FIGS. 9 and 10C, the filament was deformed. In contrast, when the alternating power (14 volts/10 volts) involving a minimum applied voltage of 10 volts was fed, no substantial deformation in the filament was observed.
Deformation of the filament (i.e., the degree of deformation, a time which lapses until deformation arises, and influence on the life time of the valve) became increasingly severe as the minimum applied voltage increased in a sequence of: 6 volts, 7 volts, 8 volts. Particularly, for the minimum applied voltage of 8 volts, the deformation was considerable.
When the minimum applied voltage was increased in the sequence of: 8 volts, 9 volts, 9.5 volts, the degree of deformation became weak, and the life of the valve was prolonged. Here, the accumulated time during which 14 volts had been supplied was taken as the life of the voltage switching illumination test.
Since difficulty is encountered in directly measuring the temperature of the filament that is achieved at the time of illumination of the valve, a radiant intensity of infrared rays of the illuminating filament was determined as a temperature distribution of the filament. Results shown in FIG. 12 were obtained FIG. 12A shows measurement points P1 to P18 on the filament. FIG. 12B shows the temperature distribution of the filament achieved with applied voltages 6, 8, 10, 12, 14, and 16, while the radiant intensity of infrared rays achieved at an applied voltage of 14 volts was taken as 100%. The highest temperature is achieved at the longitudinal center of the filament, and the temperature decreases toward ends of the filament.
FIGS. 13A and 13B show variations in the temperature of the filament achieved during the simple blinking test, the blinking (light is dimmed at the time of extinction) test, the blinking (light is dimmed to a threshold value at the time of extinction) test, and the voltage switching illumination test. FIG. 13A shows variations in temperature of filament having arisen after simple blinking, blinking (dimming during extinction), blinking (dimmed to threshold value during extinction as in embodiment). FIG. 13B shows variations in temperature of filament having arisen after simple blinking and voltage switching.
As shown in FIG. 13A, according to the blinking test (dimming performed for extinction) the longer the dimming time (0.5 seconds→one second→two seconds), the more slowly the filament is cooled. In the voltage switching illumination test in FIG. 13B, the cooling speed of the filament achieved immediately after switching from the maximum applied voltage to the minimum voltage is fast. However, the temperature of the filament slowly, gradually approaches the temperature to be achieved by the minimum applied voltage (i.e., the cooling speed of the filament is reduced).
In the blinking (light is dimmed at the time of extinction) test (see FIGS. 9, 10, 11, and 13B), the state of deformation of the filament was captured by a camera, and deforming motions were examined. As shown in FIGS. 14A and 14B, the filament axially expanded and contracted and vibrated every time the valve was illuminated. Some of the adjacent coil sections contacted each other, thereby causing pitch touch. Specifically, both end sections of the filament are fixedly fused to, e.g., a lead support.
Due to electromagnetic force generated by a rush current flowing during illumination of the valve and the thermal stress caused by a temperature variation, the filament axially expanded and contracted (i.e., vibrated) and was subjected to repetition of axial expansion and contraction, thereby resulting in deformation. One possible reason for this effect is that the mechanical strength of a portion of the filament has become weak: that apart of the filament having low strength is deformed by expansion and contraction of the coil and that coil sections c1, c1 adjoining to the deformed area come into contact with each other, thereby causing pitch touch and rupture.
From the foregoing test results, the applicant has made the following determinations. The filament is made of high purity tungsten. From room temperature to a high temperature, the basic crystalline structure of tungsten is a body-centered cubic lattice. Tungsten is not known to have-any definite transition point (or transition temperature) at which the crystalline structure changes. However, the test results become understandable if a transition point (transition temperature) at which a change arises in the crystalline structure of a tungsten filament roughly corresponds to a light source applied voltage of 8 volts (i.e., the temperature of the filament achieved when a voltage of 8 volts is applied to the valve).
More specifically, every time a dimming control operation is performed for shifting the valve to an extinguished state by gradually decreasing the amount of power fed to the valve (i.e., the voltage applied to the light source) during illumination, the tungsten filament is gradually cooled from a temperature higher than the transition point (the transition temperature). Every time the filament is cooled, the transition point (transition temperature) unique to the filament tungsten is gradually passed. If the transition point (transition temperature) is repeatedly passed in association with dimming control operation while tungsten is gradually cooled, the crystalline structure of tungsten is changed to a structure readily deformed by stress (i.e., the transition distribution in a crystal is changed) achieved at the time of annealing of the crystalline structure of tungsten. Consequently, the filament is presumed to be deformed by the electromagnetic force or thermal stress caused during illumination of the valve.
As shown in FIGS. 9, 10, and 13B, the influence of "annealing achieved at the transition point (transition temperature)" is significant when a dimming speed (a cooling speed of the filament) is slow. As shown in FIGS. 9, 10, and 13A, in the simple blinking test not involving a dimming operation, the speed at which the filament is annealed is rapid. Hence, the filament is considered less susceptible to the influence of "annealing achieved at the transition point (transition temperature)" (i.e., the influence on the crystalline structure).
The voltage switching illumination test involving application of alternating power supply was conducted for examining alight source applied voltage corresponding to the transition point (transition temperature). As shown in FIGS. 9 and 10 (c), when the minimum applied voltage is 7 to 8 volts, shortening of the valve life (≈a deformation of the filament) is considerable. The filament of this case is affected by the annealing operation achieved at the transition point (transition temperature) during the course of the filament shifting from a high-temperature state in which a high heating value is obtained as a result of application of a voltage of 14 volts, to a low-temperature state in which a low heating value is obtained as a result of application of the minimum voltage (during the course of the applied voltage being changed).
Specifically, the cooling speed of the filament achieved immediately after the applied voltage has been switched from 14 volts to 7 to 8 volts is fast. However, after a while, the temperature of the filament slowly approaches the temperature corresponding to the heating value achieved at the applied voltage of 7 to 8 volts. At this time, the transition point is passed slowly, whereupon the filament is affected by the annealing operation achieved at the transition point (transition temperature).
Even if the transition point (transition temperature) is situated in the vicinity of the light source applied voltage of about 8 volts, the temperature distribution of the filament is such that the ends and the center of the filament show a difference of 200° C. As a matter of course, when an alternating power supply involving a minimum applied voltage of 7 or 9 volts (14 volts/7 volts or 14 volts/9 volts) is applied to the filament, the filament is slightly affected by the "annealing operation achieved at the transition point (transition temperature)." This result also applies when an alternating power supply involving a minimum applied voltage of 6 and 9.5 volts (14 volts/6 volts or 14 volts/9.5 volts) is applied to the filament.
When an alternating power supply involving a minimum applied voltage of 6 volts (14 volts/6 volts) is applied to the filament, the cooling speed of the filament (i.e., a temperature variation) achieved when the transition point (transition temperature) is passed is considerably fast. Therefore, when compared with a case where the alternating power supply (14 volts/7 volts) is applied to the filament, the extent to which the filament is affected by the annealing operation achieved at the transition point (transition temperature) is smaller. When the alternating power supply involving a minimum applied voltage of 10 volts (14 volts/10 volts) is applied to the filament, the entire filament fails to reach the transition point (transition temperature), and hence the filament is considered not affected by the annealing operation achieved at the transition point (transition temperature).
As mentioned above, on the premise that the transition point (transition temperature) of a filament made of tungsten is present within the valve applied voltage range from 7 to 8 volts (the temperature range of the filament achieved when a voltage of 7 to 8 volts is applied to the valve), applicant has considered that the filament would not be affected by the annealing operation achieved at the transition point (transition temperature) within the range of a light source applied voltage of 14 to 9 volts at which the transition point (transition temperature) is not achieved even when dimming control operation is performed to gradually decrease the light source applied voltage, and that the filament would not be affected by the annealing operation achieved at the transition point (transition temperature) within the range of a light source applied voltage of 9 volts or less at which the transition point (transition temperature) is passed, so long as the filament is rapidly cooled by means of decreasing the light source applied voltage to 0 in one stroke (i.e., substantially instantaneously), as discovered by applicant.
As shown in FIG. 11D, there was adopted, as dimming control for extinguishing light by gradually decreasing the amount of power supplied to the valve (i.e., the light source applied voltage), a configuration for controlling the light source applied voltage to 0 in one stroke when a predetermined threshold value (e.g., 9 volts) is achieved by means of gradually decreasing the light source applied voltage from 14 volts to the predetermined threshold value (9 volts) at which the transition point is not achieved, over a period of one to two seconds. Through repetition of the blinking test (dimming performed at the time of extinction), prevention of deformation of the filament is ascertained to be effective. The presently claimed invention has been proposed on the basis of this concept.

Vehicle headlamp system and dimming-type vehicle headlamp


A process is designed to finish all slits of the surface layer of an airplane runway. The process involves a first step in which a slit is heated such that the surface of the slit is dry, and that the capillary holes of the slit are opened up. The surface of the slit is then provided with a coating of an asphalt synthetic agent. The coating is subsequently heated to cause the molecules of the asphalt synthetic agent to diffuse into the capillary holes of the slit, thereby preventing the water from finding its way into the gradation layer of the runway. In the meantime, the slit is provided with a soft interface capable of preventing the water from finding its way into the slits of the surface layer of the runway. The soft interface is securely attached to the slits regardless of the climatic changes.

The present invention relates generally to the construction of airplane runway, and more particularly to processes of finishing slits of surface layers of runway, taxiway, apron, hangar, and the like.
The conventional process of finishing slits of surface layers of the runway and the like is described and discussed hereinafter with reference to the accompanying FIGS. 1-20. The runway in question has a length of 3000 meters, a width of 60 meters, and a thickness of 30 centimeters.
As shown in FIG. 1, the runway is formed of a gradation layer A, and a surface layer 10 which is paved on the gradation layer A and is formed of pavement concrete (PC) or reinforced concrete (RC).
As shown in FIG. 2, the runway is provided on the gradation layer A with a plurality of first surface layer units 10A, which are parallel to one another at an interval of six meters and are equal in length to the runway. The surface layer units 10A are formed of pavement concrete or reinforced concrete.
As shown in FIG. 3, the runway surface layer 10 is further formed of a plurality of second surface layer units 10B, which are paved side by side with the first surface layer units 10A such that a second slit 17 is formed in the juncture of the first surface layer unit 10A and the second surface layer unit 10B.
As shown in FIG. 4, the surface layer 10 is provided with a longitudinally-oriected expansion slit 11, which is formed by cutting in the juncture of the first surface layer unit 10A and the second surface layer unit 10B. The expansion slit 11 has a depth of 3 cm, and a width of 1 cm.
As shown in FIG. 5A, the runway surface layer 10 is provided with hundreds of guide slits 12, which are arranged at a predetermined interval such that they are perpendicular to the length of the runway, The guide slits 12 are intended to prevent the formation of irregular cracks in the surface layer 10.
As shown in FIG. 5B, each of the guide slits 12 is provided with a horizontally-oriented expansion slit 13 which has a depth of 3 cm and a width of 1 cm, thereby resultion in formation of a number of checkers 14 on the surface layer 10, as shown in FIG. 6. The checkers 14 are intended to prevent the surface layer 10 from being damaged by the effects of expansion and contraction of the surface layer 10 due to the climatic factors.
As shown in FIGS. 7 and 8, the longitudinal expansion slit 11 and the horizontal expansion slit 13 are provided with a polyethylene (PE) strip 15 and a polyurethane (PU) slit-filling agent 16 covering the PE strip 15. The construction of the surface layer 10 is thus completed such that the runway is resistant to water.
The conventional process described above is also used to build taxiway, apron, hangar, and the like, The conventional process has several deficiencies, which are explicitly described hereinafter.
In light of the first surface layer units 10A and the second surface layer units 10B being constructed separately, there is formation of the second slit 17 in the juncture of the first surface layer unit 10A and the second surface layer unit 10B, as shown in FIGS. 3, 4, and 7. Upon completion of the guide slit 12, a through slit 18 is formed in such a way that it extends from the bottom of the guide slit 12 toward the gradation layer A, as shown in FIGS, 5A, 5B, and 8. The slit-filling agent 16 is coated on the inner walls of the longitudinal expansion slit 11 and the horizontal expansion slit 13, without penetration into the small holes of the inner walls of the expansion slits 11 and 13. As a result, the slit-filling agent 16 is apt to be stripped form the expansion slits 11 and 13 under the influence of the climatic changes, The slit-filling agent 16 is different in heat expansion coefficient from the first surface layer unit 10A, the second surface layer unit 10B, the pavement concrete, and the reinforced concrete. As a result, a water interstice 11xe2x80x2 is formed between the longitudinal expansion slit 11 and the slit-filling agent 16, as shown in FIG. 9. Similarly, a water interstice 13xe2x80x2 is formed between the horizontal expansion slit 13 and the slit-filling agent 16, as shown is FIG. 10. The water finds its way into the gradation layer A via the water interstice 11xe2x80x2 and the second slit 17, as shown in FIGS. 7 and 9. Similarly, the water finds its way into the gradation layer A via the water insterstice 13xe2x80x2, the guide slit 12 and the through slit 18, as shown in FIGS. 8 and 10. In light of the effect of the water erosion, A void A1 is formed in the gradation layer A, as shown in FIG. 11. The void A1 weakens the structural strength of the area in the vicinity of the longitudinal expansion slit 11. Such a weakened area of the surface layer 10 of the runway is apt to cave in when the surface layer 10 is exerted on by an external force of an airplane or heavy equipment, thereby resulting in formation of a pothole 19 in the surface layer 10 of the runway, as shown in FIG. 11. It is conceivably unsafe for an airplane to land or take off on a runway having potholes. The only workably remedy to provide the gradation layer A of the runway with protection against the water erosion is to replace the slit-filling agent 16 periodically. The periodic replacement of the slit-filling agent 16 is not cost-effective and is apt to hinder the normal operation of the airport.
The rain water tends to accumulate in those checkers 14 which are located in the juncture of the longitudinal expansion slit 11 and the horizontal expansion slit 13. As a result, the checkers 14 are susceptible to surface crack 14xe2x80x2, as shown in FIG. 12. The surface crack 14xe2x80x2 will eventually become a pothole 19, The conventional method of repairing the surface crack 14xe2x80x2 involves a first step in which two slender slits 141 are formed by cutting along two longitudinal sides of the surface crack 14xe2x80x2, as shown in FIG. 13. Thereafter, the surface layer 10 located between the two slender slits 141 is removed to form a shallow trench 142 which has a width of 30 cm and a depth of 10 cm, as shown in FIG. 14. As shown in FIG. 15, the shallow trench 142 is then filled with a filling material 20, which is a mixture containing water, epoxy resin quartz sand, pavement concrete, or reinforced concrete, The filling material 20 is different in heat expansion coefficient from the surface layer 10 and is therefore vulnerable to being separated from the side walls and the bottom wall of the shallow trench 142, thereby resulting in formation of a second process silt 21 between the filling material 20 and the shallow trench 142, as shown in FIG. 16. The water W enters from the second process slit 21 into the surface crack 14xe2x80x2 which is located under the shallow trench 142. Subsequently, the water W enters the gradation layer A from the surface crack 14xe2x80x2. It is also likely that a gap 23 is formed between the bottom wall of the shallow trench 142 and the filling material 20, as shown in FIG. 17. This is due to the fact that the filling material 20 is exerted on by the expansion forces of the side walls of the shallow trench 142. As a result, the filling material 20 is partially jutted out of the shallow trench 142. The surface layer 10 of the runway is therefore rugged, In other words, the filling material 20 might become a culprit responsible for the flat tire.
In the event that the surface crack 14xe2x80x2 is numerous, the surface layer 10 of the runway is replaced with a new surface layer. The process of paving a new surface layer involves a first step in which a thickness of 10 cm of the surface layer 10 is removed from the runway, so as to form an intermediate layer 10xe2x80x2, as shown in FIG. 18. The intermediate layer 10xe2x80x2 is sprayed with a layer of asphalt, thereby resulting in formation of a holding layer 101 on the intermediate layer 10xe2x80x2. The holding layer 101 is then paved with asphalt cement 30 having a thickness of about 5 cm. The asphalt cement layer 30 is covered with a pavement reinforcing fabric 40, which is made of polyacrylic fiber or polyester fiber. Finally, the pavement reinforcing fabric 40 is covered with an asphalt concrete layer 30, which has a thickness of 5 cm. A new runway surface layer 30xe2x80x2 is thus completed, as shown in FIG. 19.
The primary objective of the present invention is to provide a process for finishing slits of the surface layer of an airplane runway in such a manner that the gradation layer of the airplane runway is immune from the water erosion, thereby prolonging the service life span of the airplane runway.
The process of the present invention is intended to overcome the deficiencies of the conventional processes described above. According to the process of the present invention, various slits of the surface layer of a runway are effectively resistant to water so as to minimize the water erosion of the gradation layer of the runway. The process of the present invention involves a first step in which the slits of the surface layer of the runway are properly heated to open up the capillary holes of the silts, so as to enhance the bonding of the asphalt synthetic agent with the side walls of the slits. As a result, various slits of the surface layer of the runway are effectively sealed off to an extent that the water is prevented from permeating into the gradation layer of the runway. The slits of the surface layer are further provided with a soft interface capable of preventing the formation of the second process slit, the surface crack, and the reflective crack.
The soft interface of the present invention is securely attached to the slits such that the chemical properties of the soft interface are not affected by the climatic changes, and that the soft interface is capable of converting a vertical internal stress into a horizontal action force, thereby preventing the formation of the reflective crack in the surface layer of the runway.
The process of the present invention involves the use of waterproof rubber cloth by which all slits of the surface layer of the runway are made waterproof. As a result, the gradation layer of the runway is free of voids which are caused by the water erosion. The use of the waterproof rubber cloth can also prevent the formation of the reflective crack in the surface layer of the runway. The process of the present invention eliminates the formation of potholes in the surface layer of the runway.

Construction method for protecting the airplane runway surface from being cracked to spit out crush stones


A blood analyzing system for analyzing the level of content of a component (such as glucose) of blood collected from a person or animal. In the blood analyzing system, a pipet unit includes a drop meter for measuring the volume of the blood sample actually dropped onto a test slide. Reacting to a reagent coated on the test slide, the blood sample changes its color, which is optically detected. A content calculating circuit calculates the level of content of the blood sample based on the received light signal. The content calculating circuit also corrects the calculated results according to the volume of the actually dropped blood sample.

1. Field of the Invention
This invention relates to a blood analyzing system for analyzing the amount of a component such as glucose which is present in a blood sample.
2. Description of the Related Art
The components of blood collected from a man or animal are measured to check his or its health.
The components such as glucose, LHD (lactate dehydrogenase) and neutral fat are usually measured and analyzed for the foregoing purpose. Hereinafter, a component to be measured and analyzed is called the "specified component."
The specified component is usually measured as described below. A drop of a blood sample (e.g. centrifugally separated serum or plasma) is applied onto a glass test slide coated with a reagent on its upper side. Reacting to the reagent, the dropped blood is colored or changes its color. In a certain period of time, light is irradiated onto the test slide. The light reflected from or passing through the test slide is received, so that the level of content of the specified component can be calculated according to intensity of the light having a particular wavelength. One example of measuring instruments for this purpose is disclosed in a Japanese Patent Laid-Open Publication No. Sho 62-194442.
To analyze the component accurately, a known volume of the blood sample should be applied onto the test slide. When it is manually applied by a pipet, the volume of the blood sample will become variable, thereby making the analysis less reliable.
Japanese Utility Model Laid Open Publication No. Hei 2-17662 discloses a pipet unit for applying the blood sample. The pipet unit sucks and transfers the blood sample by the pump action exerted by a piston and a cylinder. The volume of the blood sample can be more accurately controlled than when the sample is manually transferred. In the cited invention, the piston is operated by a piston actuator.
With the conventional pipet unit, the volume of the blood sample actually transferred is not measured at all. If the piston stroke happened to become irregular temporarily or intermittently, the transferred volume of the blood sample would deviate from the present volume. Therefore, it is necessary to correct errors in the analyzed results due to inaccurate volumes of the blood samples.
In addition, the volume of the applied blood sample is variable because the piston stroke sometimes becomes irregular due to backlash resulting from relative motion of gears caused by looseness in the piston actuator. Therefore, it is necessary to remove such backlash as much as possible.


A system and method for switching between multiple audio input signals to select one of the audio input signals as audio output signal are disclosed which include receiving the audio input signals, receiving a control signal, and switching controlled by the control signal from a first one of the audio input signals to a second one of the audio input signals. Prior to switching, the first one of the audio input signals is muted and upon switching, the second one of the audio input signals is unmuted in one of multiple unmute modes based on one or more signal parameters characterizing the second one of the audio input signals.

Occupants in a car can enjoy audio programs from various types of audio sources such as a CD player, an analog and digital radio tuner, an MP3 player and the like. Conventionally, such an entertainment system is controlled by a head unit that is typically installed in a dashboard and a desired audio source is selected with buttons provided on the head unit. The buttons control audio switches that connect the desired audio source to an amplifier-loudspeaker system. In general, simple audio switches may generate switching spikes, which can cause the known problem of switching noise or "pops", or may cut off parts of the signal. Since highest quality stereo audio is becoming increasingly popular in car audio systems, switching noise and signal degeneration are unacceptable. Therefore, there exists a need for non-obtrusive switching between audio sources.


A dielectric cap, interconnect structure containing the same and related methods are disclosed. The inventive dielectric cap includes a multilayered dielectric material stack wherein at least one layer of the stack has good oxidation resistance, Cu diffusion and/or substantially higher mechanical stability during a post-deposition curing treatment, and including Si—N bonds at the interface of a conductive material such as, for example, Cu. The dielectric cap exhibits a high compressive stress and high modulus and is still remain compressive stress under post-deposition curing treatments for, for example: copper low k back-end-of-line (BEOL) nanoelectronic devices, leading to less film and device cracking and improved reliability.

In traditional IC chips, aluminum, Al, and aluminum alloys have been used as interconnect metallurgies for providing electrical connections to and from devices in semiconductor interconnect (i.e., back-end-of-the-line, BEOL) layers of the devices. While Al-based metallurgies have been the material of choice for use as metal interconnects in the past, Al-based metallurgies no longer satisfy requirements as circuit density and speeds for IC chips increase and the scale of the devices decreases to nanometer dimensions. Thus, copper, Cu, and Cu-alloys are being employed as a replacement for Al-based metallurgies in nano-electronic devices because of their lower resistivity and their lower susceptibility to electromigration failure as compared to Al-based metallurgy.
One challenge relative to using Cu-based (i.e., pure Cu and Cu alloys) metallurgy is that it diffuses readily into the surrounding interconnect dielectric material as BEOL processing steps continue. To inhibit copper diffusion, copper-based interconnects can be isolated by employing protective barrier layers. Such protective barrier layers include, for example, conductive diffusion barrier liners of tantalum, titanium or tungsten, in pure, alloy and/or nitrided form, along the sidewalls and bottom of the copper-based interconnection. On the top surface of the copper-based interconnects, capping barriers are provided. In the prior art, such capping barrier layers comprise various dielectric materials, e.g., silicon nitride (Si3N4).
A conventional interconnect structure utilizing copper-based metallization and cap layers described above includes a lower substrate which may contain logic circuit elements such as, for example, transistors. An interlevel dielectric (ILD) layer is located above the substrate. The ILD layer may be formed of, for example, silicon dioxide (SiO2). However, in advanced interconnects, the ILD layer is preferably a low dielectric constant k material such as, for example, plasma deposited SiCOH or porous SiCOH. An adhesion promoter layer may be disposed between the substrate and the ILD layer. A silicon nitride (Si3N4) or SiCN (N-Blok) layer is optionally disposed on the ILD layer. The silicon nitride or silicon carbon nitride (N-Blok) layer is commonly known as a hard mask layer or polish stop layer. At least one conductor is embedded in the ILD layer. The conductor is typically copper or a copper alloy in advanced interconnects, but alternatively may be aluminum or another conductive material. When the conductor is copper-based, a diffusion barrier liner is preferably disposed between the ILD layer and the copper-based conductor. The diffusion barrier liner is typically comprised of tantalum, titanium, tungsten, or nitrides of these metals.
The top surface of the conductor is made coplanar with the top surface of the hard mask layer usually by a chemical-mechanical polish (CMP) step. A cap layer, also typically of silicon nitride or N-Blok, is disposed on the conductor and the hard mask layer. The cap layer acts as a diffusion barrier to prevent diffusion of copper from the conductor into the surrounding dielectric material during subsequent BEOL processing steps.
Plasma enhanced chemical vapor deposition (PECVD) films such as N-Blok or silicon nitride provide superior electromigration protection, and help to curtail diffusion of copper atoms along the interconnect surface.
Recently, the use of ultra low dielectric constant (ULK) dielectric materials (i.e. k<3.0) for copper-based interconnects have turned to ultra low k, two phase porous SiCOH. These dielectric materials require the use of a post-deposition curing step using ultraviolet (UV) and/or electron beam (E-Beam) radiation, for example. The energy used during post-deposition curing such as, for example, UV radiation, changes the cap film's stress to a more tensile direction. Typically, the energy of the curing process such as, for example, UV exposure, changes the stress of the cap layer from compressive to tensile which could potentially result in cracking and adhesion problems in both the cap layer and the ULK dielectric material, Any crack in the cap layer may lead to copper diffusion into the interconnect dielectric material layer, i.e., ILD, through the seam leading to formation of a copper nodule under the cap layer. The presence of such a copper nodule in the ILD may lead to short circuits due to leakage of current between adjacent interconnect lines.
The change from the cap film's compressive to tensile stress during the post-deposition curing treatment process will create intrinsic mechanically instability between the metal-cap-dielectric films and may also cause other damages such as, for example, increased cap-interlevel dielectric film cracking, delamination and blister formation over patterned copper lines, particularly during subsequent dielectric depositions, metallization, and chemical-mechanical polishing. Therefore, the retention of high compressive cap film's stress during post-deposition treatment is highly desirable for stable BEOL Cu-cap-low k ILD structures.
Furthermore, the need for reducing capacitance in advanced nano-electronic devices also requires that the overall dielectric constant of the cap film must be lower than silicon nitride (k˜7.0), silicon carbide (SiCH) and silicon carbon nitride (SiCNH, k˜5.5) cap films which are currently being employed in advanced interconnect structures.
In view of the foregoing, there is a need for a dielectric cap having a lower dielectric constant and higher mechanical and electrical stability to post-deposition curing treatment (e.g., UV and/or B-beam) than presently used dielectric cap materials.

Advanced multilayer dielectric cap with improved mechanical and electrical properties

International Business Machines Corporation


A multifunctional charging station is provided. The multifunctional charging station includes a housing, an alarm clock, an AC input connector, an AC output interface, a DC output interface, a luminous display screen, a wireless charging system, a controller and a managing circuit. The multifunctional charging station is configured to optimally supply electrical power to AC and DC electric devices, while wirelessly charging electric devices at the same time, and functions as an alarm clock and lighting system (e.g., a nightlight).

Mobile electronic devices (e.g., mobile phones, tablets, or notebooks) have become increasing important in everyday life. For example, more and more individuals use their mobile phone and/or tablets as part of their daily routine for making calls, checking e-mail or similar messages, socializing, and shopping. Most of these electronic devices are mobile, for convenience, and typically utilize a rechargeable battery for powering itself. These rechargeable batteries typically have a capacity limit, and based on the continued daily use of each electronic device, requires recharging multiple times during the electrical device's lifecycle. Unfortunately, the charging interface for many of these electronic devices differ, and may require different charging stations to recharge each device. Each charging interface may be based on the device type (e.g., a notebook as compared to a mobile phone) and/or the device manufacture. Additionally, the charging interface may only support one type of operation (e.g., a DC operation or AC operation) or provide only charging functionalities. Additionally, most charging stations are not compatible for wireless charging various electrical devices.
Accordingly, a need exists for a charging station that can support multiple charging interfaces and functions in a single assembly.

Multifunctional charging station technical field


A heat transfer roll has first and second disc-shaped outer end sections each having a centrally located tubular shaft. An inner tubular body is fitted over the two outer end sections, and a plurality of spiral ribs extend from the first end to the second end around the inner tubular body, and an outer tubular shell is fitted over the spiral ribs to form a plurality of spiral channels. Each of the end sections have one or more passageways therein which are in communication with the bore through the tubular shaft and the spiral channels. One of the outer end sections is adapted to receive a plurality of removable plugs, such that each removable plug when inserted will block the flow of liquid to one of the spiral channels. To clean such a heat transfer roll, all but one channel may be closed such that the remaining open channel may be cleaned.

In the course of manufacturing of a web material such as a sheet plastic, paper, or the like, the material passes between one or more rolls which compress the material into the desired shape. In the course of manufacturing such web material, it is important to maintain the temperature of such rolls within narrow tolerances. The manufacture of some materials require the application of heat to the material from the roll, whereas other processes require that the roll cool, or chill the material. If the temperature of the roll is not properly monitored, the material being manufactured will not have the desired consistency and may, for example, stick to the roll and cause irregularities in the webbed product manufactured.
In order to maintain a roll at a desired temperature, such heat transfer rolls provide for a heating or a cooling liquid to be injected through a bore in the shaft at one end of the roll. The liquid is then directed through a plurality of spiralled channels positioned within the roll and adjacent the outer cylindrical surface thereof. After passing through the spiral channels across the length of the roll, the liquid is emitted through a second bore in the shaft at the opposite end of the roll.
The liquid, which is recycled through the channels of the roll, gradually deposits impurities in the channels of the roll, which is generally referred to as scaling. Over a period of time, the scaling within the channels of the roll will inhibit the flow of liquid therethrough and eventually it will not be possible to maintain the roll at the desired temperature, causing defects in the product manufactured. The scaling may occur evenly throughout the channels of the roll, or scaling may become concentrated in one or more channels and may ultimately result in altogether blocking one or more channels. When an operator cannot maintain the roll at the required temperature, the roll must be serviced, and the scaling within the channels removed.
Currently, such rolls can be descaled by injecting a cleaning chemical through the bore in the shaft at one end, through the channels, and out the bore in the opposing end. As the cleaning solution dissolves the accumulated material within the channels of the roll, the chemical makeup of the cleaning solution become altered, and to monitor the descaling certain chemical qualities, such as the pH of the discharged cleaning solution, are recorded. When it is apparent that the cleaning solution is no longer dissolving deposits, the channels are presumed to have been cleaned and the roll can be placed back in service.
Although rolls may generally be descaled as described above, the process consumes a considerable amount of time and chemicals. When, for example, scaling is concentrated in one or more channels, the cleaning solution will tend to freely and quickly flow through the open channels but move slowly through the congested channels, such that the cleaning of a congested channel may consume an inordinate amount of time and chemical. Furthermore, if one or more channels is completely clogged, the cleaning solution may fail to descale the channel altogether. In such cases, a service technician monitoring the discharge of cleaning solution may conclude that the channels of the roll have been descaled when, in fact, the problem is unsolved. When the scaling within the single channel of a roll totally blocks the movement of liquid therethrough, it may be necessary to disassemble the roll by removing the outer surface thereof to obtain access to the channels so that they may be manually descaled. This process, however, is extremely expensive and time consuming, and results in the entire rebuilding of the roll.
It would be desirable to provide a method and apparatus whereby a descaling and cleaning solution may be directed through any one of the plurality of channels in such heat transfer rolls such that the channels may be individually descaled.


An isolated highway addressable remote transfer (HART) interface with programmable data flow is provided. The isolated HART interface includes a HART channel having at least one pair of terminals configured to connect with a HART device via a current loop. The HART channel is programmable to have each pair of terminals assigned as a current loop input or a current loop output.

The present invention relates generally to a component within a control system, and more particularly to a programmable current loop interface that supports Highway Adressable Remote Transfer (HART) protocol signals with point galvanic isolation, for use in controlling and monitoring a HART device.
Control of a steam turbine or gas turbine is one example in which a HART device has industrial applicability. A HART device is generally a sensor or actuator that is embedded with the "smarts" to facilitate communication with a control device using the well-known HART protocol. In the control of a turbine, a HART sensor device controls current flowing in a wire, while a HART actuator device is controlled by the flow of the current in the wire. In accordance with the HART protocol, these functions are performed over the current loop carrying a 4 to 20 milliampere (mA) signal that is superimposed with HART data tones.
In some turbine control systems, HART sensor devices and HART actuator devices may be interfaced to the control system using modules that perform current loop measurements and current loop driving. These HART device modules are generally implemented to have a specified ratio of input channels to output channels in order to perform the current loop measurement and current loop driving functions. Typically, the ratio of input channels to output channels is fixed. Often times, the amount of sensors and actuators used in the control of a turbine does not conform to the specified ratio of input channels to output channels provided in a typical module. For example, a 12 channel module having 10 inputs and 2 outputs may not be well suited for use in a control application that does not have a use for all of the inputs and outputs. For instance, if a control application is desired to have 96 outputs and zero inputs, then it would be necessary to use 48 packs of these 12 channel modules in order to attain the desired ratio of zero inputs to 96 outputs. This is an inefficient use of these modules because all of the inputs (i.e., 480) in the 48 packs would be inactive. In addition, using 48 packs of 12 channel modules to attain the desired ratio of zero inputs to 96 outputs makes the cost of implementing the control application expensive.

Isolated HART interface with programmable data flow


A method and apparatus are provided that measure object height and volume using a combination of and optical means and image processing techniques. The method includes multiple imaging paths with different object distance viewing the same field of view of the object. Image processing techniques are used to determine the degrees-of-focus of features of the images captured from the different imaging paths. Height of the features of the object is determined by the difference in the degrees-of-focus on different images. The object volume is calculated from the height of its features.

The present invention generally relates to a method and an apparatus for the measurement of object height and volume using a combination of optical means and image processing techniques.
There are many applications that require the measurement of height and volume using non-contact means. For example, a first step in a surface-mount printed circuit board assembly process is the printing of solder paste onto the solder pads. In this case, the amount of solder paste deposition onto the solder pad is crucial to the integrity of the assembled printed circuit board. A wrong amount of solder forms a poor solder joint. Excessive solder paste causes bridging between adjacent pads. Less solder paste causes poor contact. In another example, the wire bonding process connects a wire from the bond pad of a semiconductor die to a lead of a lead frame. This process requires the measurement of the wire loop height and the ball height.
It can be observed that most of the existing on-line methods of measuring the height and volume of an object, such as solder paste, rely on sampling of several points on the deposition. Sampling measurement does not provide sufficient data and information for effective process control. On the other hand, detailed measurement which covers the entire solder paste deposition is time consuming which can only be performed off-line. In the case of measuring the wire loop and ball height in the wire bonding application, manual techniques relying on focusing are commonly used. This technique is difficult to automate and is slow in nature.
Laser structured light and confocal scanning laser microscopy approaches are two common methods for the measurement of object height and volume. The laser structured light approach makes use of a laser line projector to project a finely focused light strip over the solder paste. The displacement of the light strip from its original axis is observed. Using a triangulation principle, the displacement of the light strip is used to calculate the height of an object, for example, the solder paste. U.S. Pat. No. 4,891,772, issued Apr. 15, 1987, discloses point and line range sensors using the principle of laser structured light.
U.S. Pat. No. 4,965,441, issued Feb. 26, 1989, discloses a method of scanning confocal light-optical microscopy. This method measures the focusing of laser beams to determine the height of an object. The entire solder paste deposition can be measured using the scanning confocal light-optical microscopy method. However, this method is time consuming and can only be applied off-line.


An internal combustion engine ignition coil includes: a center core; a primary coil provided on an outer side of the center core; a secondary coil provided on an outer side of the primary coil; and a side core provided on an outer side of the primary coil and the secondary coil and formed by stacked electromagnetic steel sheets, the side core having one contact portion in contact with one end surface of the center core and another contact portion in contact with another end surface of the center core with a magnet therebetween. The side core is composed of a plurality of side core portions fitted to each other to be movable relative to each other in a longitudinal direction of the center core.

It has been known that: cores of a closed magnetic path configuration used for a conventional internal combustion engine ignition coil include a center core disposed on the inner side of a primary coil and a secondary coil, and a side core having one end surface in contact with one end surface of the center core and the other end surface in contact with the other end surface of the center core with a magnet therebetween; and the side core is divided into two pieces, and thus, even if the dimensions of the center core, the magnet, and the side core are slightly changed, workability of assembling the components is prevented from deteriorating (see, for example, Patent Document 1).
In addition, the following configuration has been proposed: a configuration in which a side core is composed of a plurality of side core portions formed by stacked electromagnetic steel sheets divided at different locations in a longitudinal direction, an overlap portion at which the electromagnetic steel sheets of the side core portions adjacent to each other overlap with each other between the different locations in the longitudinal direction is provided, and positioning portions that allow rotational movement only in such a direction as to open the side core portions with respect to each other are formed at the overlap portion, thereby suppressing increase in a magnetic circuit resistance without causing assembling workability to deteriorate (see, for example, Patent Document 2).

Internal combustion engine ignition coil


1. A copolymer having recurring units of the following formulas (1), (2), and (3),

1. Field of the Invention
The present invention relates to a radiation-sensitive resin composition and, more particularly, to a radiation-sensitive resin composition suitable as a chemically-amplified resist useful for microfabrication utilizing various types of radiation, for example, ultraviolet rays such as g-line or i-line, (extreme) deep ultraviolet rays such as a KrF excimer laser, ArF excimer laser, F2 excimer laser, or EUV, X-rays such as synchrotron radiation, and charged particle rays such as electron beams. The present invention also relates to a novel copolymer useful as a copolymer component for the resin composition and to a polymer mixture containing the copolymer.
2. Description of Background Art
In the field of microfabrication represented by fabrication of integrated circuit devices, photolithographic technology enabling microfabrication with a line width of 0.20 μm or less has been demanded in recent years in order to achieve a higher degree of integration.
A conventional photolithographic process utilizes near ultraviolet rays such as i-line radiation. It is known in the art that microfabrication with a line width of a sub-quarter micron order using near ultraviolet rays is very difficult.
Therefore, use of radiation with a shorter wavelength has been studied for enabling microfabrication with a line width of 0.20 μm or less. As radiation with a shorter wavelength, deep ultraviolet rays represented by a line spectrum of a mercury lamp and an excimer laser, X-rays, electron beams, and the like can be given. Of these, a KrF excimer laser (wavelength: 248 nm), an ArF excimer laser (wavelength: 193 nm), an F2 excimer laser (wavelength: 157 nm), and EUV (wavelength: 13 nm, etc., extreme ultraviolet radiation) have attracted attention.
As a radiation-sensitive resin composition applicable to shorter wavelength radiation, a number of compositions utilizing a chemical amplification effect between a component having an acid-dissociable functional group and a photoacid generator which generates an acid upon irradiation (hereinafter called "exposure") has been proposed. Such a composition is hereinafter called a chemically-amplified radiation-sensitive composition.
As the chemically-amplified radiation-sensitive composition, Japanese Patent Publication No. 27660/1990 discloses a composition comprising a resin containing a t-butyl ester group of carboxylic acid or a t-butylcarbonate group of phenol and a photoacid generator. This composition utilizes the effect of the resin to release a t-butyl ester group or t-butyl carbonate group by the action of an acid generated upon exposure to form an acidic group such as a carboxylic group or a phenolic hydroxyl group, which renders an exposed area on a resist film readily soluble in an alkaline developer.
Micronization of photolithography processes in recent years has been remarkable. In particular, in the KrF photolithography processes the limit resolution has decreased to one half of the light source wavelength or less. For this reason, characteristics required for photo resists have become increasingly stringent. In particular, there is urgent need for the improvement in the resolution performance, radiation transmittance, and dry etching resistance. As factors affecting the resolution of chemically-amplified resists, an activation energy required for dissociation of protection groups in an acid-dissociable resin,; difference in the dissolution rate in the developer before and after the dissociation, and the like can be given. From the viewpoint of the dissolution rate, an acrylic acid/phenol hybrid type (or an ESCAP-type) represented by protection of carboxylic acid with a t-butyl group is more advantageous than a pure phenol resin represented by protection of phenol with a t-butyl carbonate group. From the viewpoint of the activation energy, resins containing many alkyl-substituents having a large steric hindrance and acting as an electron donor are more preferable. For these reasons, Japanese Patent Application Laid-open No. 347405/2000 discloses a photo resist using an acrylic acid ester having a cycloalkyl group as a protection group. The composition disclosed by this patent application contains styrene units introduced to compensate poor dry etching resistance of the acrylic acid ester, with a consequence of sacrificing the advantage of superior resolution.
An object of the present invention is to provide a radiation-sensitive resin composition useful as a chemically amplified resist sensible to active radiations, for example, deep ultraviolet rays represented by a KrF excimer laser, ArF excimer laser, F2 excimer laser, and EUV excimer laser, exhibiting high resolution and high radiation transmittance, without impairing dry etching resistance.
Another object of the present invention is to provide a copolymer and a polymer mixture useful as a polymer component for the radiation-sensitive resin composition.

Copolymer, polymer mixture, and radiation-sensitive resin composition

Abstract: wherein R1, R4, R5, and R6 are a hydrogen atom or a methyl group, R2, R3, and R7 represent a monovalent organic group, k is 1 or 2, 1 is 0–4, n is 1–3, m is 0–3, R8 is a substituted methyl group, 1-substituted ethyl group, 1-branched alkyl group, triorganosilyl group, triorganogermyl group, alkoxycarbonyl group, acyl group, or cyclic acid-dissociable group, with two or more R8 groups being the same or different, q is 1–3, and p is 0–3, the copolymer having a GPC average molecular weight of 3,000–100,000. The composition is useful as a polymer component for a radiation-sensitive resin composition suitable as a chemically-amplified resist.


This invention relates to a tire with a rubber tread reinforced with silica and containing one or more additives designed to aid ice traction for the tread. Such additive is selected from at least one of (i) at least one organic fiber having hydroxyl groups on the surface thereof selected from cellulose fibers and wood fibers and (ii) small, hollow, spherical ceramic particles having silanol groups on the surface thereof. The rubber is composed of at least one or more diene-based sulfur vulcanizable elastomers having a Tg of less than -30.degree. C. and containing silica as predominant particulate reinforcement and other traditional rubber compound ingredients. In particular, a coupler is used to couple the silica as well as the said additive(s) to the elastomer(s) in the tire tread composition.

In some countries with relatively harsh, long winters, such as for example some parts of some Scandinavian countries, studded winter tires are used relatively extensively to enhance tire tread traction on icy roads. However, the use of studded tires, namely tire treads containing metallic studs, have sometimes been somewhat restricted at least in part due to potential damage to roads.
For many years, non-studded winter tires have been used which have tread rubber compositions composed of elastomers which have low glass transition temperatures (Tg's), namely Tg's below -30.degree. C. Such low Tg elastomers are typically used to inhibit or at least reduce excessive hardening of the tread rubber composition at the very low ambient operating temperatures.
Also, silica reinforcement of selected elastomers have been used for tire treads intended for winter conditions. For example, see U.S. Pat. No. 5,616,639.
Other winter tread rubber compositions designed to improve tire traction on ice include the aforesaid use of low Tg rubbers, as well as use of low temperature plasticizers designed to provide a general reduction of the tread composition's hardness at low temperatures.
However, it is considered herein that it is still desired to provide tire treads with enhanced traction on roads which are icy for extended periods of time.
Historically, substantial amounts of silica reinforcement in combination with a silica coupling agent has sometimes been used as a primary or predominant reinforcement for various rubber blends in rubber tire treads. For example, see U.S. Pat. Nos. 4,519,430; 5,066,721; 5,227,425 and 5,616,639. Use of various coupling agents to achieve reinforcement of the rubber composition by coupling the silica to the elastomer(s) is well known. However, it is considered herein that such silica/coupler reinforcement is often not, by itself, entirely sufficient for suitably enhanced ice traction for a tire tread.
While it is understood that cellulose fibers have been previously suggested for use in earthmover tire treads to reduce cut propagation in the tire tread rubber composition and that resorcinol/formaldehyde type bonding systems have sometimes been used to bond such fibers to the resin network of the tread rubber composition compounds, it is considered herein that the subject of ice traction for such tread compositions has not been addressed.
In the description of this invention, the terms "rubber" and "elastomer" where used herein unless otherwise prescribed, are used interchangeably. The terms rubber "composition" or "compound" where used herein, unless otherwise prescribed, generally refers to a composition in which one or several rubbers are blended or mixed with various ingredients or materials. A term "compounding ingredient" where used herein unless otherwise prescribed, generally refers to ingredients used to prepare rubber compositions, or compounds. Such terms are well known to those having skill in the rubber mixing and compounding art.
The term "phr", where used herein and according to conventional practice, refers to parts by weight of respective material per 100 parts by weight of rubber.
The Tg of a rubber or rubber compound, as used herein unless otherwise prescribed, refers to its glass transition temperature which can be conventionally be determined, for example, by differential scanning calorimetrie at a heating rate of 10.degree. C. per minute. It is understood that such Tg determination is well known to those having skill in such art.


A laryngoscope including a control circuit and a camera having a housing enclosing the camera that is detachably connectable to a handle, where the camera functions and is compatible with a wide variety of displays. The laryngoscope may optionally be used in either the video mode where the user views a display presenting image data of the area ahead of the blade, or the user may use the laryngoscope in the direct visualization where the user uses the laryngoscope in a traditional manner directly viewing the area ahead of the blade during the intubation procedure. When used in the video mode, an LED is positioned adjacent to a window enclosing the digital image sensor to defog the window.

A number of medical procedures require ventilation be provided to the patient, which may be provided through an endotracheal tube. This tube may be inserted into the trachea. It should be noted that when the tube is inserted, the patient is asleep hyperoxygenated and then paralyzed for the procedure, and therefore not breathing. As the ventilator is not yet in operation, the physician must work quickly to insert the endotracheal tube.
With the advent of endoscopic equipment and small cameras, instrumentation can enable viewing of the cords and larynx on a video screen facilitating the intubation of the patient in a relatively quick and safe manner. In some instances it has been determined that direct visualization of the cords and larynx is preferred over the video method. However, video laryngoscopes due to their specialized construction, traditionally do not allowed for intubation by direct visualization. Rather, a physician must discard the video laryngoscope and obtain a traditional non-video laryngoscope to perform this procedure. This disadvantageously leads to delay in intubation of the patient due at least in part to the fact that the physician has to change instruments. It is highly desirable to reduce any cause for delay in the intubation process.
U.S. Pat. Nos. 6,655,377 ("the '377 patent") and 6,543,447 ("the '447 patent") disclose video laryngoscopes having a lifter portion that is long enough to extend into the laryngopharynx and operably engage the epiglottis of the patient. One function of the lifter portion is to hold the intubation tube with the video device is positioned on a lower side of the blade opposite to the lifter portion. While this configuration functions as a video laryngoscope, the lifter portion extends upward from the upper surface of the blade such that any direct visualization by a physician is virtually impossible. As such, a physician would have to discard and retrieve a separate laryngoscope to perform this procedure.
Another problem that traditional video laryngoscopes face is the limited interface ability they have with monitors. For example, a video laryngoscope typically is designed and can only be used with a single type of monitor, e.g. either an O.R. monitor or a P.C. This is disadvantageous as the physician may desire to switch monitors, for example, the laryngoscope may be attached to an O.R. monitor but the physician wants to connect the laryngoscope to a relatively small portable computer monitor as the patient is transported. The laryngoscope would then have to be replaced with a device capable of functioning with a P.C. monitor.
Yet another problem associated with video laryngoscopes is the fact that, many imaging chips are positioned in a cavity or enclosure at a distal end of the laryngoscope blade and are enclosed by a transparent window. However, the window often becomes fogged during the procedure thereby limiting the ability of the physician to see clearly.


A static random-access memory (SRAM) in an integrated circuit with circuitry for timing the enabling of sense amplifiers. The memory includes read/write SRAM cells, along with word-line tracking transistors arranged in one or more rows along a side of the read/write cells, and read-tracking transistors arranged in a column along a side of the read/write cells. A reference word line extends over the word-line tracking transistors, with its far end from the driver connected to pass transistors in the read-tracking transistors. The read-tracking transistors are preset to a known data state that, when accessed responsive to the reference word line, discharges a reference bit line, which in turn drives a sense amplifier enable signal.

This invention is in the field of solid-state memories. Embodiments of this invention are more specifically directed to the sensing of stored data states in such memories.
Many modern electronic devices and systems now include substantial computational capability for controlling and managing a wide range of functions and useful applications. The computational power of these modern devices and systems is typically provided by one or more processor "cores". These processor cores operate as a digital computer, in general retrieving executable instructions from memory, performing arithmetic and logical operations on digital data retrieved from memory, and storing the results of those operations in memory. Other input and output functions for acquiring and outputting the data processed by the processor cores are performed as appropriate. Considering the large amount of digital data often involved in performing the complex functions of these modern devices, significant solid-state memory capacity is now commonly implemented in the electronic circuitry for these systems.
Static random access memory (SRAM) has become the memory technology of choice for much of the solid-state data storage requirements in these modern power-conscious electronic systems. As is fundamental in the art, SRAM cells store contents "statically", in that the stored data state remains latched in each cell so long as power is applied to the memory; this is in contrast to "dynamic" RAM ("DRAM"), in which the data must be periodically refreshed in order to be retained.
FIG. 1a illustrates an example of a conventional SRAM cell 2, which is constructed in the well-known six-transistor (6-T) arrangement. In this example, cell 2 is in the jth row and kth column of a memory array of similar cells, and is biased between the voltage on power supply line Vdda and a ground reference voltage Vssa. SRAM memory cell 2 is constructed in the conventional manner as a pair of cross-coupled CMOS inverters, one inverter of series-connected p-channel load transistor 3a and n-channel driver transistor 4a, and the other inverter of series-connected p-channel load transistor 3b and n-channel transistor 4b; in the usual manner, the gates of the transistors in each inverter are connected together and to the common drain node of the transistors in the other inverter. The common drain node of transistors 3a, 4a constitutes storage node SNT, and the common drain node of transistors 3b, 4b constitutes storage node SNB, in this example. N-channel pass transistor 5a has its source/drain path connected between storage node SNT and bit line BLTk for the kth column, and n-channel pass transistor 5b has its source/drain path connected between storage node SNB and bit line BLBk. The gates of pass transistors 5a, 5b are driven by word line WLj for this jth row in which cell 2 resides.
Bit lines BLTk, BLBk are shared by other cells 2 in the same column k, and are connected (typically via transfer gates, and perhaps also by way of column select circuitry, neither shown in FIG. 1a) to sense amplifier 12. Sense amplifier 12 is constructed similarly as cell 2, in that it includes a pair of cross-coupled inverters: one inverter being series-connected p-channel load transistor 13a and n-channel driver transistor 14a, and the other inverter of series-connected p-channel load transistor 13b and n-channel transistor 14b. The gates of the transistors in each inverter are connected together and to the common drain node of the transistors in the other inverter, in the usual manner. In sense amplifier 12, the common drain node of transistors 13a, 14a constitutes sense node ST, which is coupled to bit line BLTk, while the common drain node of transistors 13b, 14b constitutes storage node SB, coupled to bit line BLBk. In contrast to cell 2, however, ground bias is applied to sense amplifier 12 via n-channel MOS enable transistor 15, which has its drain connected to the source nodes of transistors 14a, 14b, and its source at ground voltage Vss. The gate of enable transistor 15 receives sense amplifier enable signal SAE.
In its normal operation, bit lines BLTk, BLBk are typically precharged by precharge circuitry 7 to a high voltage Vddp (which is at or near power supply voltage Vdda) and are equalized to that voltage; precharge circuitry 7 then releases bit lines BLTk, BLBk to then float during the remainder of the access cycle. During this time, sense amplifier enable signal SAE is inactive low, turning off enable transistor 15, which disables the operation of sense amplifier 12. To access cell 2 for a read operation, word line WLj is then energized, turning on pass transistors 5a, 5b, and connecting storage nodes SNT, SNB to bit lines BLTk, BLBk. Upon sense amplifier enable signal SAE being driven active high, the differential voltage developed on bit lines BLTk, BLBk by selected cell 2 is sensed and amplified by the cross-coupled inverters of sense amplifier 12. To write data, typical SRAM memories also include write circuitry that pulls one of bit lines BLTk, BLBk low (i.e., to a voltage at or near ground voltage Vssa), depending on the data state to be written. Upon word line WLj then being energized, the low level bit line BLTk or BLBk will pull down its associated storage node SNT, SNB, causing the cross-coupled inverters of addressed cell 2 to latch in the desired state.
In any type of solid-state semiconductor memory, the sensing of data stored in a selected memory cell is a critical operation. Accurate sensing of the stored memory cell state must be maintained over varying voltage and temperature conditions, variations in manufacturing parameters, and in the presence of system noise. As a result, the precision of the sense circuitry plays a role in determining the memory density in bits per unit "chip" area (and thus in the cost-per-bit of manufacturing the memory), because the noise margin of the sense circuitry determines, in large part, the minimum memory cell size required to provide the necessary read current. The timing of the sense operation in an SRAM constructed as shown in FIG. 1a has become especially critical as transistor feature sizes have continued to shrink.
FIG. 1b is a timing diagram illustrating an example the timing of sense amplifier enable signal SAE relative to the access of a conventional SRAM cell 2. In this example, SRAM cell 2 of FIG. 1a is storing a "0" data state (i.e., storage node SNT is at a low "0" level, and storage node SNB is at a high "1" logic level), and is being read during a read cycle in which its row j is selected. At the beginning of the cycle shown in FIG. 1b, for example at time t0, bit lines BLTk, BLBk are both precharged to a high logic level by bit line precharge circuitry 7. Word line WLj is at a low logic level, maintaining pass transistors 5a, 5b off In SRAM cell 50jk in this example, storage nodes SNT, SNB will be at full "0" and "1" logic levels, respectively, corresponding to the stored "0" data state. Because pass transistors 5a, 5b are both off with word line WLj low, the precharged levels at bit lines BLTk, BLBk are isolated from storage nodes SNT, SNB. Sense amplifier enable signal SAE is at an inactive low level at this time, disabling the operation of sense amplifier 12.
In this example, word line WLj is energized to a high logic level at time t1, to select row j including cell 2. Pass transistors 5a, 5b couple storage nodes SNT, SNB to their respective bit lines BLTk, BLBk. Cell 2 is storing a "0" data state in this example, and as such, upon word line WLj being energized and pass transistor 5a being turned on, the voltage at bit line BLTk will be affected by the low level at storage node SNT. For this data state, in which high logic level is driven at storage node SNB, bit line BLTk begins to be discharged by driver transistor 4a of cell 2 when pass transistor 5a is turned on by word line WLj after time t1. Because driver transistor 4b will be off for this data state, bit line BLBk will not be significantly discharged from its precharged high level.
Three possible timings of sense amplifier enable signal SAE are shown in FIG. 1b, by way of example. At time tearly, the differential voltage ΔV1 at bit lines BLTk, BLBk is quite small, as compared with the differential voltages ΔV2, ΔV3 at later times tx and tlate respectively. If sense amplifier enable signal SAE is driven high at time tearly, the sensing operation by sense amplifier 12 is vulnerable to error caused by noise of a magnitude greater than the small bit line differential voltage ΔV1 at that time. On the other hand, the driving of sense amplifier enable signal SAE high at time tlate may be later than necessary for reliable sensing over the voltage and temperature range of the memory. For example, if differential bit line voltage ΔV2 provides sufficient noise margin to the sensing operation, the larger differential bit line voltage ΔV3 may not provide any practical benefit. In this case, the later sense time tlate would unduly lengthen the read access time by the delay of time tlate from the optimal time tx.
It has been observed that the design of modern SRAM circuitry to optimally time the driving of the sense amplifier control signal can be quite difficult. Various conventional techniques for interlocking the sense control signal in SRAM devices have been developed.
FIG. 1c illustrates one conventional approach for determining sense amplifier timing. In this example of memory array 20, one row is selected by one of row drivers 17, corresponding to the row address decoded by row decoder 16, driving an active level on a word line WL. As described above, each sense amplifier 12 is enabled by a corresponding enable transistor 15 that receives sense amplifier enable signal SAE at its gate. In this example, sense amplifier enable signal SAE is driven by inverter chain 19, which receives a row enable control signal ROW_EN that gates each of row drivers 17. In operation, in response to a low-to-high transition of row enable control signal ROW_EN, the row driver 17 addressed by row decoder 16 will drive its associated word line WL to an active high level, turning on the pass transistors in each cell in that row. The low-to-high transition of row enable signal ROW_EN is also received by inverter chain 19, which in turn, after the propagation delay through the inverters in inverter chain 19, initiates sense amplifier enable signal SAE that is applied to the gates of enable transistors 15.
While the conventional solution shown in FIG. 1c can be designed to nominally generate sense amplifier enable signal SAE at a desired time, this approach is subject to certain limitations. A first such limitation stems from the difference in construction between the memory cell transistors (i.e., load transistors 3a, 3b; driver transistors 4a, 4b; pass transistors 5a, 5b) in array 20 and the "logic" transistors that make up inverter chain 19 outside of array 20. In modern integrated circuits, in which significant differences in channel lengths, threshold voltages, and the like are incorporated into the ultimate structure, the electrical characteristics of the logic transistors will differ from those of the cell transistors that the logic transistor behavior will not closely match that of the array transistors. In integrated circuits realized at modern sub-micron feature sizes, the smaller cell transistors are generally not permitted outside of the array boundaries due to their significant differences in design rules and manufacturability, which prohibits the fabrication of inverter chain 19 using cell transistors; in addition, it has been observed that localized variation in device behavior of the small geometry cell transistors can be significant, which reduces the benefit of realizing inverter chain 19 using cell transistors outside of the array even if it were permitted. This mismatch is exacerbated in state of the art technologies, in which the cell transistors within array 20 and logic transistors outside of array 20 are fabricated largely with independent processes, such as different pocket or Vt-adjust ion implants, different gate dielectric processing (e.g., fluorinated gate oxide in the cell transistors), and the application of transistor length biasing to one transistor type but not the other. These processing differences reduce the correlation of logic transistors to cell transistors even further, worsening the ability of inverter chain 19 to adjust sense amplifier timing in response to process variations. As such, designs that rely on an inverter chain or other logic transistor delay stages external to the memory for sense amplifier timing will necessarily include some additional design margin (i.e., additional delay in generating sense amplifier enable signal SAE), which adversely impacts read access times.
FIG. 1d illustrates another conventional approach to determining sense amplifier timing. In this example, rather than inverter chain 19 of FIG. 1c, replica row drivers 22 receive the row enable control signal ROW_EN, and drive reference word lines RWL applied to replica mini-array 24 accordingly. Replica mini-array 24 is a small array of "dummy" memory cells, constructed using the same transistor sizes as in main array 20, but located outside of array 20. One or more of those "dummy" memory cells have hard-wired data states that are reflected on reference bit lines RBL. Reference bit lines RBL are connected to inputs of sense driver 25, which drives sense amplifier enable signal SAE upon receiving the communicated data state of the "addressed" dummy memory cells. Typically, multiple dummy cells along one or more columns of replica mini-array 24 are ganged together to minimize the effects of local device variation.
In operation, reference word lines RWL are driven high by replica row drivers 22 in response to a transition of row enable control signal ROW_EN. Upon reference word lines RWL charging to a sufficient voltage to turn on pass transistors in the associated dummy memory cells, and upon the accessed dummy memory cells discharging reference bit lines RBL to a low level, sense driver 25 then asserts sense amplifier enable signal SAE. This conventional approach improves on the inverter chain delay stage of FIG. 1c, by theoretically constructing the delay elements similarly as the cell transistors in main array 20, thus providing a proxy for the effects of the parasitic impedance of reference word lines WL, bit line transistors, and cell transistors. However, the chip area required to implement replica mini-array 24 can be significant, especially in those technologies requiring dummy cells at the edge of the replica memory cells in order to absorb proximity effects, or to implement terminations and "keepouts". And while replica mini-array 24 will mimic the parasitic resistance and capacitance of the word lines and bit lines of main array 20, it is still only a proxy for those effects, and will not necessarily match all process, voltage, and temperature variations. Furthermore, this construction will not track on-chip variations in read current among the cells of main array 20. Accordingly, the approach of FIG. 1d is contemplated to be an expensive (in chip area) technique for generating sense amplifier enable signal SAE, while still not closely matching or tracking the actual optimum timing.
Arslan et al., "Variation-Tolerant SRAM Sense-Amplifier Timing Using Configurable Replica Bitlines", Custom Integrated Circuits Conference (IEEE, 2008), pp. 415-418, describes the incorporation of a replica column of memory cells implemented in or adjacent to the main memory array, in which the discharge of the replica bit line by a configurable number of dummy memory cells in that column drives the sense amplifier enable signal. Amrutur et al., "A Replica Technique for Wordline and Sense Control in Low-Power SRAM's", J. Solid State Circuits, Vol. 33, No. 8 (IEEE, 1998), pp. 1208-19, describes a row of replica cells implemented in or adjacent to the main memory array, for which a dummy global word line is driven along with the global word line for the main array. The discharge of replica bit lines by replica memory cells selected by the dummy global word line drives the sense amplifier enable signal.

Read-current and word line delay path tracking for sense amplifier enable timing