Provided is a thermoplastic resin composition suitable for laser welding which has a laser transparency, a good laser weldability, mechanical properties, a high hydrolysis resistance, a laser-welded composite molded article such as a composite article obtained by laser-welding molded resin parts, and a method of laser welding such molded resin articles. The thermoplastic resin composition contains (A) polybutylene terephthalate, (B) polycarbonate, (C) reinforcing fiber, (D) epoxy compound, (E) carbodiimide compound, and (F) phosphorus-based stabilizer.

Thermoplastic polyester resins are used in a wide range of fields such as machine mechanism parts, electric/electronic parts and automobile parts as injection molded products by taking advantage of various properties such as excellent injection moldability and mechanical properties.
However, thermoplastic polyester resins are prone to deterioration due to hydrolysis. When used in engine parts or engine peripheral parts that are exposed to high-temperature and high-humidity environments, in addition to the balance of chemical and physical properties, long-term hydrolysis resistance is also an important property.
Although the injection-molded product can be efficiently produced from the resins, its shape is limited in terms of its flow characteristics and mold structure/design or its complicated shape, and it tends to be difficult to mold articles having complicated shapes. For this reason, conventionally, in order to produce products having the complicated shapes, a plurality of parts are connected or joined by an adhesive, a bolt or the like.
However, sufficient adhesive strength is a problem with adhesives, and cost, labor and weight increase are problems with mechanical joining such as bolts. On the other hand, external heat welding such as laser welding and hot plate welding, friction heat welding such as vibration welding and ultrasonic welding can joint or connect parts in a short time. Because no adhesives or metal parts are used, problems such as the cost and weight increase and environmental pollution do not occur in the laser welding method, and such processes are used more and more.
Laser welding, which is one of the external heat welding methods, is a method of irradiating a laser beam on laminated or overlapped resin molded articles, allowing laser to pass through one of the irradiated resin bodies and to be absorbed to the other body, whereby melting and fusing connect these articles. Since it is a non-contact processing and has advantages such as no burr generation, this method is being used a wide range of fields.
Polybutylene terephthalate resins are widely used for various purposes. The polybutylene terephthalate resin has a very low laser beam transmittance as compared with other thermoplastic resins such as a nylon resin. When a polybutylene terephthalate resin is used as a molded product on the laser beam transmitting side and the laser welding method is applied, since the laser beam transmittance is low, so the thickness of the product is severely limited. In order to improve the laser beam transmittance thereof, it is necessary to reduce the thickness of the resin article, which limits the design of the product. Therefore, there is a demand for a polybutylene terephthalate resin having a higher laser beam transmittance.
In order to resolve such problems, previous techniques/resins have shown some improvements. For example, WO 2003/002663 describes improvement of hydrolysis resistance by blending two kinds of epoxy compounds in a polyester composition. However, even with the technique described in WO 2003/002663, the hydrolysis resistance is still insufficient and the laser beam transparency is also insufficient. As another example, WO 2008/001790 proposes a resin composition for laser welding comprising a polybutylene terephthalate resin, a polycarbonate resin, and a polyfunctional compound having three or more functional groups. However, the technique described in WO 2008/001790 also has insufficient hydrolysis resistance.

Thermoplastic resin composition for laser welding, molded article made of same, and composite molded article


Described is a record play-back device with two record magazines lying opposite one another, each one for accommodating a stack of records consisting of records lying over one another. A play-back unit is disposed under and between the record magazines, with a transport mechanism that is movable in the direction of the stack of records, the mechanism including, in the transverse direction between the two stacks of records, a mobile transverse sliding carriage that transports a desired record to and from between its place within a record magazine and the play-back unit. Each record magazine displays, in the case of each record, at least one holder element releasably accommodating the record rim, and the transverse sliding carriage includes at least one gripping arrangement that seizes the desired record at the rim of the record, and with movement of the transverse sliding carriage releases it from the holder element of the record magazine.

The invention concerns a record play-back device with two record magazines lying opposite one another, each one for accommodating a stack of records consisting of records lying over one another, with a play-back unit that is disposed between the record magazines, under the lowermost records, having a transport mechanism capable of moving in the direction of the stack of records, said mechanism including, in the transverse direction between the two stacks of records, a mobile transverse sliding carriage that transports a desired record to and fro between its place within a record magazine and the play-back unit.
Known from EP 0,138,005 is a record play-back device of this type in which the records are held in individual record holders, with the record supports being stacked over one another in the record magazines. Since, in each case, the records are transported together with their record holders between their position in the record magazine and the play-back unit, the transverse sliding carriages must, in each case, remove the record holder together with the inserted record from the magazine, respectively guide it back into the magazine. Since the record holders overlap the records at the rim, and therewith display a greater space requirement than the record itself, for compensation of this increased space requirement, the sliding carriage and the gripping mechanism for picking up the record holder is constructed in an especially space-saving manner. In particular, the space-saving gripping mechanism located on the transverse sliding carriage is expensive, it requires special record holders that contain their own detent mechanism for cooperating with the gripping mechanism.
Likewise known from DE-OS 3,922,721 is a record play-back device wherein the records are stored and transported in individual record holders. To simplify the transport process of the unit formed of record holder and record, provided in each case with this known type of record play-back device are two independently-controllable sliding carriages on the transport mechanism, with the first sliding carriage--also called pull-out mechanism--executing transport between the first record magazine and the play-back device, and the second transverse sliding carriage/pull-out mechanism executing transport of the record holder between the second record magazine and the play-back unit.

Record playing device having multiple records being played continuously


A shield 1 for a caster wheel that forms part of a wheeled object, comprising: a perimeter wall 2 configured to extend substantially fully around the caster wheel, and; a connection and supporting means 5, 205 configured to extend from the perimeter wall 2 to connect the shield 1 to the wheeled object; the perimeter wall 2 comprising a resiliently deformable portion 4 that extends substantially fully around the perimeter wall.

Caster wheels are extensively used on various devices such as office chairs and supermarket trollies. When used on office chairs, they allow a user to move a chair quickly and easily, even when the user is sat on the chair. This is advantageous when moving away or towards a desk.
It is relatively common when moving a chair whilst sitting on it, for a person to inadvertently position or leave their feet in the path of the caster wheels or for the wheels to move in an unexpected manner. This can lead to a wheel impacting or running over the person's feet or damaging their shoes.


A power supply apparatus has a full-wave rectifier for rectifying an AC voltage from an AC power source to output a DC pulsating voltage, and a high-frequency inverter which performs an oscillating operation to generate an output voltage. A first capacitor is connected between the output terminals of the full-wave rectifier, a diode is connected to one end of the first capacitor and is forward-biased with respect to the pulsating voltage from the full-wave rectifier, a second capacitor is connected in parallel with the first capacitor through the diode, and an oscillation circuit, including a series circuit formed of an inductor and a charging capacitor is connected in parallel with the second capacitor, for storing a DC voltage lower than a peak value of the pulsating voltage from the full-wave rectifier in the charging capacitor. The high-frequency inverter receives an input current supplied from the first and second capacitors when the pulsating voltage from the full-wave rectifier is higher than the charged voltage across the charging capacitor, receives an input current supplied from the oscillation circuit when the pulsating voltage from the full-wave rectifier is lower than the charged voltage across the charging capacitor, and performs an oscillating operation in the presence of the received input current.

1. Field of the Invention
The present invention relates to a power supply apparatus of a high-frequency inverter type and, more particularly, to a power supply apparatus for generating a low-noise output voltage which can stably light, e.g., a discharge lamp.
2. Description of the Related Art
A power supply apparatus shown in FIG. 1 is conventionally known. In this power supply apparatus, an AC power source 1 is connected to the input portion of a full-wave rectifier 3 through a filter 2. The filter 2 is constituted by an inductor and a capacitor. The full-wave rectifier 3 is constituted by a diode bridge. The output portion of the full-wave rectifier 3 is connected to a switching transistor 5 through an inductor 4, and is further connected to a smoothing capacitor 7 through a forward-biased diode 6. The smoothing capacitor 7 is connected in parallel with a series circuit of a primary winding 12a of a transformer 12 and a switching transistor 13. A high-frequency inverter 8 includes this series circuit, a resonance capacitor 14 connected in parallel with the primary winding 12a, a diode 15 connected in parallel with the switching transistor 13, and a secondary winding 12b of the transformer 12 serving as an output portion of the inverter 8. One end of the secondary winding 12b is connected to one end of a filament 10a of a discharge lamp 10, while its the other end is connected to one end of a filament 10b of the discharge lamp 10 through a capacitor 9. A starting capacitor 11 is connected between the other ends of the filaments 10a and 10b.
In the power supply apparatus, the switching transistor 5 performs a high-frequency switching operation under the control of a control circuit 16. When the switching transistor 5 is turned on, a current flows in the inductor 4 in the presence of a pulsating voltage output from the full-wave rectifier 3. Owing to this current, energy stored in the inductor 4 is superposed on the pulsating voltage when the switching transistor 5 is turned off, thus charging the smoothing capacitor 7 through the diode 6. When such a switching operation of the switching transistor 5 is repeated, the charged voltage across the smoothing capacitor 7 is smoothed. Meanwhile, a switching current flows in the inductor 4 such that an envelope corresponding to the pulsating voltage appears as a peak. This switching current becomes a sinusoidal current in phase with the AC voltage from the AC power source 1 through the filter 2. Therefore, the input current basically contains no harmonic component, and a high power factor can be obtained.
The charged voltage across the smoothing capacitor 7 is supplied to the high-frequency inverter 8 as power source voltage, and the high-frequency switching of the switching transistor is performed in the presence of this power source voltage to operate an oscillation circuit constituted by the primary winding 12a of the transformer 12 and the resonance capacitor 14. A resonant voltage from the oscillation circuit is transmitted to the secondary winding 12b of the transformer 12. An output voltage from the secondary winding 12b is applied to the discharge lamp 10. When a current flows in a series circuit of the starting capacitor 11 and filaments 10a and 10b upon application of the output voltage, the filaments 10a and 10b are pre-heated, and at the same time the voltage across the starting capacitor 11 is increased. The discharge lamp 10 is lighted when a high voltage is generated across the starting capacitor 11 and applied to the filaments 10a and 10b.
Since the power supply apparatus is operated by means of so-called chopper control, very few harmonic components are contained in the input current to this apparatus. However, a DC current corresponding to a loss in a load circuit made up of the high frequency inverter 8 and discharge lamp 10 continuously flows from the full-wave rectifier 3 to the load circuit throughout the entire period during which the pulsating voltage is output from the full-wave rectifier 3. For this reason, each circuit component needs to have a large capacity to process a large quantity of energy. Such a circuit component is large in size and expensive. In addition, the switching transistor 5 must be periodically switched so as not to leave energy stored in the inductor 4 in the condition where the instantaneous value of the pulsating voltage is constantly changing. For such control, the control circuit 16 is inevitably complicated in structure and increased in size. With regard to energy processing by a switching operation of the switching transistor 5, since this operation is continuously performed throughout the entire period during the pulsating voltage is applied to the switching transistor 5, a large switching loss is caused. Furthermore, since a switching current has a triangular waveform, the amount of noise produced is increased. Moreover, the capacity of each circuit component connected to the power lines must be increased to cope with an excessive inrush current flowing into the smoothing capacitor 7 when the power is turned on. This also contributes to an increase in the size of the power supply apparatus.


A system and method for controlling channel access in a communications system is disclosed. The method and system include providing a data packet to communications queue and determining the priority of the data packet. The method and system also generate a channel occupancy statistic. The channel occupancy statistic is based on the level of activity on a communications channel during a predetermined period. The method and system also compare the channel occupancy statistic to a predetermined threshold. The threshold is based on the priority.

Conventional communication systems may use spread spectrum techniques to spread information across a frequency bandwidth that is significantly larger than the information bandwidth. Direct sequence spreading and/or frequency hopping may allow many different users to simultaneously share the same frequency space. These simultaneous streams provide well understood and controlled interference with respect to one another. The information in each individual stream may be recovered using the coding gain associated with the spreading of a smaller amount of information over a larger frequency bandwidth. For example, code division multiple access (CDMA) or a hybrid CDMA/time division multiple access (TDMA) are typically used for systems such as these. CDMA tends to work well in systems such a cellular telephone or wireless local area networks (LANs) where all the mobile units in a region connect to a central access point that can control the interference between mobile users by adjusting their powers. Hybrid CDMA/TDMA may work well in systems where communications follow regular patterns or where required latencies permit time for bandwidth negotiations.
However, conventional CDMA solutions tend to fail catastrophically when more traffic is offered to the network than the network is capable of handling. Conventional CDMA also lends itself poorly to prioritization of traffic and/or recognition of a variety of classes of service (CoS). These capabilities are of increasing importance to network designers for assurance of quality of service (QoS). Further, hybrid CDMA/TDMA approaches fail when traffic is highly irregular, required latencies are very small, and/or when the system propagation delay is significant compared to the average message length.
Accordingly, there is a need for systems which solve many of the above mentioned problems and, among others, may meet the following requirements:                1. Extremely low latency on delivery of one support Class of Service (CoS).        2. 99% first time success for the low latency CoS, since there may not be time for a repeat.        3. Support for multiple different Classes of Service (CoS).        4. Large number of users.
It would be desirable to provide a system and/or method that provides one or more of these or other advantageous features. Other features and advantages will be made apparent from the present specification. The teachings disclosed extend to those embodiments which fall within the scope of the appended claims, regardless of whether they accomplish one or more of the aforementioned needs.

Statistical priority-based multiple access system and method


In general, various methods, apparatuses, and systems that generate an augmented repair signature to repair all of the defects detected in a first test of a memory as well as in a second test of the memory.

Random defects occurring during the manufacturing of an integrated circuit with embedded memory blocks that can render certain non-redundant elements of an integrated circuit memory device, such as a memory column, defective. For example, particle contamination during the manufacturing process may cause broken or shorted out columns and bit defects.
Redundant elements in an integrated circuit memory device, such as redundant columns, are used to compensate for these random defects. Initial testing of an integrated circuit memory occurs after the manufacturing process. During the initial manufacturing testing of an integrated circuit memory device, defective elements are replaced by non-defective elements referred to as redundant elements. Thus, redundant components, such as redundant columns and redundant rows, may be used in a scheme to replace defective non-redundant components, discovered during initial testing of the integrated circuit memory device. Typically, once a test of a memory occurs a repair signature is generated. A repair signature is typically a binary coded sequence that identifies the defective components detected and the redundant components allocated to replace those components. The use of redundant elements and a repair signature is important in increasing the overall yield of manufacturing integrated circuits with memory devices in a single chip.
FIG. 1 illustrates a block diagram of a previous technology to generate a repair signature for an embedded memory possessing a redundancy structure used in a system on a chip (SoC). SoC 102 integrates on-chip memory 104 with processors and other similar components, all on the same chip, to decrease cost and increase performance. Redundancy techniques include adding extra memory rows and memory columns that can be substituted for defective components within the memory. The prior external test solution creates a hard repair signature under one set of conditions. The single set of conditions is typically standard operating temperature and voltage.
Four equipment insertions may be required when testing SoC memory 104. First, the external memory tester 108 tests the memory to find defective components on the SoC 102 die. The external memory tester 108 imports the failure results in order to perform redundancy analysis and allocation. The external memory tester 108 sends the repair signature, or in other words the information on how to allocate the repair elements for any defects, to the laser repair equipment 110. Second, the laser repair equipment 110 blows the fuses on the SoC 102 wafer that enable the redundant rows and memory columns to be substituted for the defective memory cells. Third, the memory tester 108 re-tests memory on the SoC 102 to ensure that the repairs were made properly. Last, the logic tester 112 analyzes the remaining non-memory components of the SoC 102.
The typical external test solution limits the detection of defective components to defects occurring during the manufacturing process and at standard environmental conditions and not defects that occur after the SoC is in operation or atypical environmental conditions such as high and low temperatures, high and low levels of operating voltages, high and low frequency conditions, etc. Further, the typical external solution may run a first test algorithm to determine defects in the memory or a second test algorithm to determine the defects in the memory. Test algorithms are typically rated to detect a given percentage of the actual defects that exist in a memory, such as 95% effective or 99% effective. The manufacturer may then choose to apply the results of the first test algorithm or the second test algorithm to repair a memory. However, no way exists to compare the results of the first test algorithm and the second test algorithm to repair all the defects detected by either the first test algorithm and the second test algorithm. Also, memory tester 108 may not be able to test the memories at the speed of the chip. Thus, potential defects that only occur when the memory is operating at speed may not be detected.

Apparatus and method to generate a repair signature


In one embodiment, a semiconductor device (500) includes a buffer layer (504) formed over a substrate (502). An AlxGa1−xAs layer (506) is formed over the buffer layer (504) and has a first doped region (508) formed therein. An InxGa1−xAs channel layer (512) is formed over the AlxGa1−xAs layer (506). An AlxGa1−xAs layer (518) is formed over the InxGa1−xAs channel layer (512), and the AlxGa1−xAs layer (518) has a second doped region formed therein. A GaAs layer (520) having a first recess is formed over the AlxGa1−xAs layer (518). A control electrode (526) is formed over the AlxGa1−xAs layer (518). A doped GaAs layer (524) is formed over the undoped GaAs layer (520) and on opposite sides of the control electrode (526) and provides first and second current electrodes. When used to amplify a digital modulation signal, the semiconductor device (500) maintains linear operation over a wide temperature range.

The present invention finds application in the field of radio frequency power amplifiers, and more particularly to power amplifiers used in base stations under digital spread spectrum modulation and in a pHEMT device for power amplifier operation over wide temperature range.
One example of spread-spectrum technology includes Wideband Code Division Multiple Access (WCDMA). WCDMA spreads multiple conversations across a wide segment of the spectrum as opposed to splitting a channel into time slots. With WCDMA, unique digital codes are used to differentiate subscribers that are simultaneously using the same spectrum.
In order to isolate conversations between two adjacent channels, a power amplifier used for WCDMA requires a certain level of linearity, characterized by an output power and an associated adjacent-channel power ratio (ACPR). As an example, an output power on the order of 30 dBm with an associated ACPR on the order of −45 dBc (decibels with respect to the carrier) is specified as the power and linearity requirement for the active device in a power amplifier. Linear RF power amplifier manufacturers can utilize such a device having an ACPR at or below −45 dBc. The exact degree of power and linearity depends on the application and can vary widely.
In addition, base stations that utilize such a power amplifier are installed across the world and must be capable of operating over a wide range of temperatures to provide a desired level of service coverage. Accordingly, the RF power amplifier circuit should maintain performance over a temperature range in the order of −40° C. to +90° C. at its mounting base plate. Only minimal performance degradation is allowed at the extreme temperature specifications.
In radio frequency base station power amplifier operations, silicon LDMOS technology typically is used when the frequency is below 2.5 GHz. However, silicon (Si) LDMOS has insufficient efficiency to meet competitive requirements above 2.5 GHz. Therefore, semiconductor technologies, such as GaAs (or AlGaAs) and GaN have been proposed and increasingly adopted. Typically, these are Metal Semiconductor Field Effect Transistors (MESFET) or High Electron Mobility Transistors (HEMT) including pseudomorphic High Electron Mobility Transistors (pHEMT).
When an AlGaAs pHEMT device is used for a power amplifier under digital spread spectrum modulation stimulus at −40° C., ACPR can degrade dramatically, as compared to room temperature. This level of linearity degradation phenomenon occurs under digital modulation, such as W-CDMA on the order of from 2 dB to 10 dB. It would be desired to obtain a device that does not degrade at this temperature range. Further, it would be desired to maintain performance of the pHEMT device at higher temperatures.
Accordingly, it would be desirable to provide for reduced power degradation under digital modulation over wide temperature operation for overcoming the problems in the pHEMT art. It would further be advantageous if the new pHEMT was compatible with existing manufacturing processes and materials used in semiconductor manufacturing. The present invention addresses one or more of these needs.

pHEMT with barrier optimized for low temperature operation


A wireless power transfer device including: a power transmitter 1 including a power transmission resonator composed of a power transmission coil and a resonant capacitance; and a power receiver including a power receiving resonator composed of a power receiving coil and a resonant capacitance. The wireless power transfer device further includes a power-transmission auxiliary device including an auxiliary resonator composed of an auxiliary coil and a resonant capacitance. The power-transmission auxiliary device and the power transmitter are configured to be disposed so as to face each other, forming a power receiving space for disposing the power receiving coil between the power transmission coil and the auxiliary coil. An efficient power transfer can be performed without providing an adjusting circuit in the power receiver even when the power receiving coil is not appropriately disposed with respect to the power transmission coil.

1. Field of the Invention
The present invention relates to a wireless power transfer device and a wireless power transfer method of wireless power transfer via a power transmission coil provided in a power transmitter and a power receiving coil provided in a power receiver.
2. Description of Related Art
As methods of wireless power transfer, an electromagnetic induction type (several hundred kHz), electric or magnetic-field resonance type using transfer based on LC resonance through electric or magnetic field resonance, a microwave transmission-type using radio waves (several GHz), and a laser transmission-type using electromagnetic waves (light) in the visible radiation range are known. Among them, the electromagnetic induction type has already been used practically. Although this method is advantageous, for example, in that it can be realized with simple circuitry (a transformer), it also has the problem of a short power transmission distance.
Therefore, the electric or magnetic field resonance-type power transfer methods recently has been attracting attention, because of a ability of a short-distance transfer (up to 2 m). Among them, in the electric field resonance type method, when placing the hand or the like in a transfer path, a dielectric loss is caused, because the human body, which is a dielectric, absorbs energy as heat. In contrast, in the magnetic field resonance type method, the human body hardly absorbs energy and a dielectric loss thus can be avoided. From this viewpoint, the magnetic field resonance type method attracts an increasing attention.
FIG. 17 is a front view schematically showing an example of the configuration of a conventional power transfer device using magnetic field resonance. A power transmitter 1 includes a power transmission coil unit including a combination of a loop coil 3a and a power transmission coil 4a (operating as a resonance coil for transmitting power). A power receiver 2 includes a power receiving coil unit including a combination of a loop coil 3b and a power receiving coil 4b (operating as a resonance coil for receiving power). To the loop coil 3a of the power transmitter 1 is connected a high-frequency power driver 5, which converts the power of an AC power supply (AC 100 V) 6 into a high-frequency power capable of being transmitted. As a load to the loop coil 3b of the power receiver 2, for example, a rechargeable battery 8 is connected via a rectifier 7.
The loop coil 3a is a dielectric element that is excited by an electric signal supplied from the high-frequency power driver 5 and transfers the electric signal to the power transmission coil 4a by electromagnetic induction. The power transmission coil 4a generates a magnetic field based on the electric signal that has been output from the loop coil 3a. The magnetic field strength of the power transmission coil 4a is a maximum when the resonant frequency f0=1/{2π(LC)1/2} (L represents the inductance of the power transmission coil 4a on the power transmission side, and C represents the stray capacitance). The power supplied to the power transmission coil 4a is wirelessly transferred to the power receiving coil 4b by magnetic field resonance. The transferred power is transferred from the power receiving coil 4b to the loop coil 3b by electromagnetic induction, rectified by the rectifier 7, and supplied to the rechargeable battery 8. In this case, the resonance frequencies of the power transmission coil 4a and the power receiving coil 4b are set to be the same.
In the condition of wirelessly transmitting and receiving power by the electromagnetic induction-type method or the magnetic field resonance-type method, if the power receiving coil unit is not appropriately disposed with respect to the power transmission coil unit, it is difficult to transfer power efficiently. Particularly, when a secondary battery that is charged by the power receiver 2 is mounted to portable equipment, a shielding member (including a wave absorber) for minimizing the influence of electromagnetic waves may be inserted between the power receiving coil unit and the secondary battery pack. In such a case, when the portable power receiving coil unit is placed upside down, the shielding member is interposed between the power transmission coil unit and the power receiving coil unit, which results in a significant reduction in the transfer efficiency and makes power transfer difficult.
Therefore, JP 2010-207017A discloses a charging system including a front/back discrimination unit (using a magnetic sensor) that detects whether the surface suitable for power reception of a power receiving coil unit faces properly a power transmission coil unit that supplies power, so that if the surface does not properly face the power transmission coil unit, the user is warned.
In the art disclosed in JP 2010-207017A, if the surface suitable for power reception of a power receiver does not properly face a power transmitter that supplies power, the user is merely warned by means of a sound or the like and eventually has to bring the surface back to the proper posture, making the operation troublesome. Moreover, in the art disclosed in JP 2010-207017A, a magnetic sensor is provided on the power receiver side for the front/back discrimination, and therefore, it is difficult to provide such function other than the charging function in the power receiver if the power receiver is small (e.g., an in-the-ear hearing aid).
If the size of the power receiving coil unit is small relative to that of the power transmission coil unit, a reduction in the power transfer efficiency, a reduction in the possible power transfer distance, and the like may occur. Furthermore, also when the coupling coefficient or the like has changed due to a change in the state such as a change in the distance between the power transmission coil unit and the power receiving coil unit, it is desired to provide an adjusting circuit in the power receiver in order to match the resonance frequencies. However, as described above, it is difficult to provide any additional function in the power receiver other than the charging function.

Wireless power transfer device and wireless power transfer method


The present invention relates to novel carboxamide compounds and their use as a medicament. The carboxamide compounds are inhibitors of calpain (calcium dependant cysteine proteases). The invention therefore also relates to the use of these carboxamide compounds for treating a disorder associated with an elevated calpain activity and to a method for the therapeutic and/or prophylactic treatment by administering an effective amount of at least one of these carboxamide compounds.

Calpains are intracellular, proteolytic enzymes from the cysteine protease group and are found in many cells. The enzyme calpain is activated by elevated calcium concentration, with a distinction being made between calpain I or μ-calpain, which is activated by μ-molar concentrations of calcium ions, and calpain II or m-calpain, which is activated by m-molar concentrations of calcium ions. Currently, further calpain isoenzymes are also postulated (M. E. Saez et al.; Drug Discovery Today 2006, 11 (19/20), pp. 917-923; K. Suzuki et al., Biol. Chem. Hoppe-Seyler, 1995, 376 (9), pp. 523-9).
Calpains play an important role in various physiological processes. These processes include the cleavage of different regulatory proteins such as protein kinase C, cytoskeletal proteins such as MAP 2 and spectrin, and muscle proteins, protein degradation in rheumatoid arthritis, proteins in the activation of platelets, neuropeptide metabolism, proteins in mitosis, and others which are listed in: M. J. Barrett et al., Life Sci. 1991, 48, pp. 1659-69; K. Wang et al., Trends in Pharmacol. Sci. 1994, 15, pp. 412-419.
Elevated calpain levels have been measured in various pathophysiological processes, for example: ischemias of the heart (e.g. myocardial infarction), the kidney, the lung, the liver or the central nervous system (e.g. stroke), inflammations, muscular dystrophies, cataracts of the eyes, diabetes, HIV disorders, injuries to the central nervous system (e.g. brain trauma), Alzheimer's, Huntington's, Parkinson's diseases, multiple sclerosis etc. (see K. K. Wang, above) and infectious diseases such as malaria (I M Medana et al., Neuropath and Appl. Neurobiol. 2007, 33, pp. 179-192). It is assumed that there is a connection between these diseases and generally or persistently elevated intracellular calcium levels. This results in calcium-dependent processes becoming hyperactivated and no longer being subject to normal physiological control. A corresponding hyperactivation of calpains can also trigger pathophysiological processes.
For this reason, it was postulated that inhibitors of calpain could be of use for treating these diseases. This postulate was confirmed by a variety of investigations. Thus, Seung-Chyul Hong et al., Stroke 1994, 25 (3), pp. 663-669, and R. T. Bartus et al., Neurological Res. 1995, 17, pp. 249-258, have demonstrated that calpain inhibitors have a neuroprotective effect in acute neurodegenerative impairments or ischemias such as occur after cerebral stroke. K. E. Saatman et al., Proc. Natl. Acad. Sci. USA, 1996, 93, pp. 3428-3433 describe that following experimental brain trauma, calpain inhibitors also improved recovery from the memory performance deficits and neuromotor impairments. C. L. Edelstein et al., Proc. Natl. Acad. Sci. USA, 1995, 92, pp. 7662-6, found that calpain inhibitors have a protective effect on hypoxia-damaged kidneys. Yoshida, Ken Ischi et al., Jap. Circ. J. 1995, 59 (1), pp. 40-48, pointed out that calpain inhibitors had favorable effects following cardiac damage which was produced by ischemia or reperfusion. The calpain inhibitor BDA-410 delayed the progression of malaria infection in a mouse model of malaria pathogenesis as shown by X. Li et al., Mol. Biochem. Parasitol. 2007, 155 (1), pp 26-32.
More recent studies have shown in calpastatin transgenic animals that the expression of the natural inhibitor of calpain significantly attenuates the pathophysiological effects of activated calpain in experimental glomerulonephritis shown by J. Peltier et al., J. Am. Soc. Nephrol. 2006, 17, pp. 3415-3423, in cardiovascular remodeling in angiotensin II-induced hypertension, in impaired synaptic transmission in slow-channel congenital myasthenic syndrome shown by J. S. Groshong et al., J. Clin. Invest. 2007, 117(10), pp 2903-2912, in excitotoxic DNA fragmentation via mitochondrial pathways shown by J. Takano et al., J. Biol. Chem. 2005, 280 (16), pp. 16175-16184, and in necrotic processes in dystrophic muscles shown by M. J. Spencer et al., Hum. Mol. Gen., 2002, 11(21), pp. 2645-2655.
It has been shown in recent years that both the function and the metabolism of a number of important proteins involved in the development of Alzheimer's disease are modulated by calpain. Various external influences such as, for example, excitotoxins, oxidative stress or else the action of amyloid protein lead to hyperactivation of calpain in the nerve cell, causing, as cascade, a dysregulation of the CNS-specific kinase cdk5 and subsequently a hyperphosphorylation of the so-called tau protein. Whereas the actual task of the tau protein consists of stabilizing the microtubules and thus the cytoskeleton, phosphorylated tau is no longer able to fulfil this function; the cytoskeleton collapses, axonal transport of matter is impaired and thus eventually the nerve cell degenerates (G. Patrick et al., Nature 1999, 402, pp. 615-622; E. A. Monaco et al.; Curr. Alzheimer Res. 2004, 1 (1), pp. 33-38). Accumulation of phosphorylated tau additionally leads to the formation of so-called neurofibrillary tangles (NFTs) which, together with the well-known amyloid plaques, represent a pathological hallmark of Alzheimer's disease. Similar changes in the tau protein, generally referred to important feature of as tauopathies are also observed in other (neuro)degenerative disorders such as, for example, following stroke, inflammations of the brain, Parkinsonism, in normal-pressure hydrocephalus and Creutzfeldt-Jakob disease.
The involvement of calpain in neurodegenerative processes has been demonstrated in transgenic mice with the aid of calpastatin, a specific and natural inhibitor of calpains (Higuchi et al.; J. Biol. Chem. 2005, 280 (15), pp. 15229-15237). It was possible with the aid of a calpain inhibitor to reduce markedly the clinical signs of acute autoimmune encephalomyelitis in a mouse model of multiple sclerosis (F. Mokhtarian et al.; J. Neuroimmunology 2006, Vol. 180, pp. 135-146). It has further been shown that calpain inhibitors on the one hand block the Ab-induced degeneration of neurons (Park et al.; J. Neurosci. 2005, 25, pp. 5365-5375), and in addition reduce the release of the β-amyloid precursor protein (β APP) (J. Higaki et al., Neuron, 1995, 14, pp. 651-659). With this background, calpain inhibitors having sufficient CNS availability represent a novel therapeutic principle for the treatment of neurodegenerative disorders in general and in particular also of Alzheimer's disease.
The release of interleukin-1α is likewise inhibited by calpain inhibitors (N. Watanabe et al., Cytokine 1994, 6(6), pp. 597-601). It has additionally been found that calpain inhibitors show cytotoxic effects on tumor cells (E. Shiba et al. 20th Meeting Int. Ass. Breast Cancer Res., Sendai Jp, 1994, 25.-28. Sep., Int. J. Oncol. S(Suppl.), 1994, 381).
The involvement of calpain in HIV disorders has only recently been shown. Thus, it has been demonstrated that the HIV-induced neurotoxicity is mediated by calpain (O'Donnell et al.; J. Neurosci. 2006, 26 (3), pp. 981-990). Calpain involvement in the replication of the HIV virus has also been shown (Teranishi et al.; Biochem. Biophys. Res. Comm. 2003, 303 (3), pp. 940-946).
Recent investigations indicate that calpain plays a part in so-called nociception, the perception of pain. Calpain inhibitors showed a distinctly beneficial effect in various preclinically relevant models of pain, e.g. in the thermally induced hyperalgesia in rats (Kunz et al.; Pain 2004, 110, pp. 409-418), in Taxol-induced neuropathy (Wang et al.; Brain 2004, 127, pp. 671-679) and in acute and chronic inflammatory processes (Cuzzocrea et al.; American Journal of Pathology 2000, 157 (6), pp. 2065-2079).
The involvement of calpain in the development of kidney diseases, such as chronic kidney diseases, e.g. diabetic nephropathy, has also been shown recently. Thus, it has been demonstrated by Y. Shi et al. in animal models that the natural calpain inhibitor calpastatin is down regulated during renal ischemia reperfusion (Am. J. Physiol. Renal Physiol. 2000, 279, pp. 509-517). Furthermore, A. Dnyanmote et al., Toxicology and Applied Pharmacology 2006, 215, pp. 146-157, have shown that inhibition of calpain via overexpression of calpastatin reduces the progression of DCVC-induced renal injury in a model of acute renal failure. In addition, Peltier et al. have demonstrated that calpain activation and secretion promotes glomerular injury in experimental glomerulonephritis (J. Am. Soc. Nephrol. 2006, 17, pp. 3415-3423). It has also been shown that calpain inhibitors reduce renal dysfunction and injury caused by renal ischemia-reperfusion and thus may be useful in enhancing the tolerance of the kidney against renal injury associated with aortovascular surgery or renal transplantation (P. Chatterjee et al., Biochem. Pharmacol. 2005, 7, pp. 1121-1131).
Further possible applications of calpain inhibitors are detailed in: M. E. Saez et al.; Drug Discovery Today 2006, 11 (19/20), pp. 917-923; N. O. Carragher, Curr. Pharm. Design 2006, 12, pp. 615-638; K. K. Wang et al.; Drugs of the Future 1998, 23 (7), pp. 741-749; and Trends in Pharmacol. Sci. 1994, 15, pp. 412-419.
With the calpain inhibitors described to date a general distinction is made between irreversible and reversible inhibitors, and peptide and non-peptide inhibitors.
Irreversible inhibitors are usually alkylating substances. They have the disadvantage that they firstly react unselectively and/or are unstable in the body. Thus, corresponding inhibitors often show unwanted side effects such as toxicity, and application thereof is therefore markedly restricted. The irreversible inhibitors include for example epoxides such as E64, α-halo ketones, and disulfides.
A large number of known reversible calpain inhibitors are peptide aldehydes which are derived in particular from di- or tripeptides such as, for example, Z-Val-Phe-H (MDL 28170). Derivatives and prodrugs structurally derived from aldehydes are also described, especially corresponding acetals and hemiacetals (e.g. hydroxytetrahydro-furans, hydroxyoxazolindines, hydroxymorpholines and the like), but also imines or hydrazones. However, under physiological conditions, peptide aldehydes and related compounds usually have the disadvantage that, owing to their reactivity, they are frequently unstable, are rapidly metabolized and are prone to unspecific reactions which may likewise cause toxic effects (J. A. Fehrentz and B. Castro, Synthesis 1983, pp. 676-78).
In recent years, a number of non-peptide carboxamides having a β-keto function in the amine moiety and inhibiting calpain have been described. Thus, WO-98/16512 describes 3-amino-2-oxo carboxylic acid derivatives whose amino group is amidated with a 4-piperidinecarboxylic acid compound. WO-99/17775 describes similar compounds which are amidated with a quinolinecarboxylic acid. WO-98/25883, WO-98/25899 and WO-99/54294 describe 3-amino-2-oxo carboxylic acid derivatives whose amino group is amidated with a substituted benzoic acid. WO-99/61423 describes 3-amino-2-oxo carboxylic acid derivatives whose amino group is amidated with an aromatic carboxylic acid carrying a tetrahydroquinoline/isoquinoline and 2,3-dihydroindole/isoindole residue. Similar compounds in which the aromatic carboxylic acid residue carries a heterocyloalkyl radical or (hetero)aryl radical which is optionally connected via a linker are described in WO-99/54320, WO-99/54310, WO-99/54304 and WO-99/54305. Likewise, WO 08/080969 describes nicotinamides of 3-amino-2-oxo carboxylic acid derivatives that in position 2 of the pyridine ring are linked to a substituted pyrazole via a nitrogen atom. WO-99/54293 describes benzamides of 4-amino-3-oxo carboxylic acid derivatives. WO-03/080182 describes the use of the aforementioned amides for the treatment of pulmonary diseases. The nonpeptide calpain inhibitors mentioned therein also have a number of disadvantages, in particular a low or absent selectivity in respect of related cysteine proteases, such as various cathepsins, likewise possibly leading to unwanted side effects.

Carboxamide compounds and their use as calpain inhibitors

Abstract: The carboxamide compounds are compounds of the general formula I

Abstract: in whichW—R2 is selected from

Abstract: and R1, R2, R3a, R3b, Y1, Y2, Y3, Y4, X, Q, m, k, Rw and Rw* have the meanings mentioned in the claims, the tautomers thereof and the pharmaceutically suitable salts thereof. Of these compounds those are preferred wherein Y1, Y2, Y3 and Y4 are CRy, or one or two of the variables Y1 to Y4 are a nitrogen atom and the remaining variables are CRy, wherein the radicals Ry may be identical or different and have the meanings mentioned in the claims.


An aircraft wing including: a main wing element; and a flap connected to the main wing element by a deployment system which can deploy the flap from a retracted position to an extended position, wherein the wing has a trailing edge which is swept, at least in the region of the flap, when the flap is in its retracted position, and wherein the deployment system is arranged such that the flap reduces the degree of sweep of the trailing edge of the wing in the region of the flap as it is deployed. The deployment system includes a first actuator configured to rotate the flap horizontally so as to change the sweep angle of the flap and a second actuator configured to rotate the flap vertically so as to increase the camber of the wing, and the first and second actuators are operable independently of each other.

Conventional flap deployment systems include flap track mechanisms, drop link mechanisms, and multi-bar linkage mechanisms. Flap track mechanisms employ a track on which the flap runs on roller bearings as it moves between its retracted and extended positions. Drop link mechanisms employ a rigid drop link which is pivotally coupled at one end to the main wing element and to the flap at the other end.
Most flap deployment systems impart a vertical rotation to the flap so as to increase the camber of the wing. Some also impart a degree of rearward translation to the flap (commonly referred to as "Fowler motion"). US 2007/0034748 A1 discloses a multi-bar linkage mechanism which imparts a degree of horizontal rotation to the flap. This has the effect of increasing the degree of sweep of the wing in the region of the flap.
A degree of sweep in the trailing edge of the wing may be desirable to reduce drag during high speed operations, but may be less than optimal for low speed operations in which a higher lift coefficient is required.
U.S. Pat. No. 4,172,575 discloses a flap deployment system in which inboard and outboard flap linkage mechanisms act together to produce a pseudo conical flap extension. Both linkages are driven from a single rotary actuator.

Aircraft wing and flap deployment system


In a dynamic random access memory device including an SOI substrate and a field shield isolation region, a p type impurity region is formed between an n type source/drain region of a transistor coupled to a storage node in a dynamic memory cell and an n type impurity region below a field shield electrode A reverse bias voltage is supplied respectively between the p and n type impurity regions, and between the n type source/drain region of the transistor and the p type body region. As a result, leakage current from the n type source/drain region to the p type body region is compensated for by the leakage current from the n type impurity region to the p type impurity region

1. Field of the Invention
The present invention relates to a semiconductor device, a semiconductor memory device, and a method of manufacturing a semiconductor device. More particularly, the present invention relates to a dynamic random access memory (DRAM) formed on an SOI (Silicon-On-Insulator) substrate, and a method of manufacturing thereof.
2. Description of the Background Art
Many semiconductor memory devices called DRAMs are now provided. Such a DRAM requires a storage holding operation (referred to as refresh operation hereinafter), and allows data read out and writing.
FIG. 26 schematically shows a cross-sectional view of a memory cell of a conventional DRAM. Referring to FIG. 26, this memory cell includes one transfer gate transistor (referred to as transistor hereinafter) TR formed of an MOSFET and one memory capacitor (referred to as capacitor hereinafter) C.
Transistor TR includes a pair of N type source/drain regions 20 formed on the surface of a P type semiconductor substrate 100, and a transfer gate electrode 1 formed on the surface of semiconductor substrate 100 with a gate insulation film 100 thereunder. Transfer gate electrode 1 forms word line WL.
Capacitor C includes a capacitor lower electrode (referred to as storage node hereinafter) 51 connected to one of source/drain regions 20, and a capacitor upper electrode (referred to as cell plate hereinafter) 52 formed on lower electrode 51 with a dielectric layer 53 therebetween.
A bit line BL is connected to the other source/drain region 20 in transistor TR.
In the above-described memory cell of a DRAM, charge is stored in capacitor C from bit line BL via transistor TR to store data.
In recent years, transistor technology utilizing an SOI structure is being established. Such a transistor of an SOI structure is characterized in that wiring-substrate capacitance, i.e. wiring capacitance, is reduced, and the operating rate of circuitry is improved. The application of such a transistor into a CMOS provides the advantage of preventing the latch up phenomenon. There are also various advantages such as reduction of the short channel effect of the transistor, and improvement of the current driving capability and the sub threshold characteristics.
Application of an SOI structure into a memory cell of a DRAM is now in research.
However, there was the problem that a refresh operation must be carried out frequently in a conventional DRAM. This problem will be described in detail hereinafter.
A refresh operation is carried out for reasons set forth in the following. A memory cell includes a P type region and an N type region in a semiconductor substrate 100. Leakage current is generated in the junction between the P type region and the N type region. Such a leakage current causes reduction in the stored charge of a memory cell to result in loss of the stored data.
Generation of a leakage current will be described with reference to an equivalent circuit diagram of a memory cell.
FIG. 27 is an equivalent circuit diagram of the memory cell of FIG. 26. Referring to FIG. 27, a memory cell includes a transistor TR and a capacitor C.
Transistor TR is provided between a bit line BL and capacitor C. Transistor TR is turned on/off in response to the potential on word line WL. The node between transistor TR and capacitor C is a storage node 51. Capacitor C receives a cell plate potential Vcp at its cell plate.
In the proximity of the portion where storage node 51 is connected to source/drain region 20 of FIG. 26, a diode D is formed since the N type region and a P type region are connected. Diode D has its cathode connected to storage node 51 to receive a substrate potential VBB at its anode. When charge is stored in capacitor C, the leakage current at the reverse bias of diode D causes the stored charge to be reduced, resulting in loss of data.
FIG. 28 is a graph showing a change in potential V of storage node 51 in a memory cell of the DRAM shown in FIGS. 26 and 27.
The graph of FIG. 28 has potential V plotted along the ordinate, and time t plotted along the abscissa.
Referring to FIG. 28, data of an H level which is the power supply potential Vcc level is initially present due to the stored charge in the memory cell when the stored information towards the memory cell attains an H level. This potential V of storage node 51 is reduced over time according to the leakage current of the memory cell. The memory cell initially storing data of an H level has the charge gradually reduced to an L level if a refresh operation is not carried out.
Potential V falls from the level of Vcc to become lower than Vcc/2.
When reduction in potential V is encountered, a refresh operation must be carried out at a time point of tREF1 where the potential level is higher than the level of Vcc/2 by a predetermined level .DELTA.V corresponding to a sense amplifier detection capability.
Thus, execution of a refresh operation is indispensable in a conventional DRAM. The cycle of executing a refresh operation (corresponding to rREF1) must be increased to simplify control in a DRAM.

Semiconductor device having a floating node that can maintain a predetermined potential for long time, a semiconductor memory device having high data maintenance performance, and a method of manufacturing thereof


An abutment arrangement for connecting a dental restoration to a dental implant, including a post body and a screw element. The post body has an expansion part and the screw element includes a spreading section. The passage extends through the expansion part of the post body. An outer diameter of the expansion part of the post body is elastically increasable by applying a lateral force. The passage of the post body has a pressure receiving section at the expansion part. When the screw element is located in the passage of the post body, the spreading section of the screw element is arrangeable at the pressure receiving section of the passage of the post body such that the lateral force is applied to the expansion part of the post body and the outer diameter of the expansion part of the post body is increased.

For dental restoration, often damaged or lost teeth are replaced by artificial teeth which comprise dental restorations such as bridges, crowns or the like. Thereby, the dental restorations are placed either on remainders of original teeth or on implants set as artificial roots into jaw bones. Known restorations usually are made of materials which meet specific requirements such as biocompatibility, robustness, longevity and the like. For example, in non-exposed sections of the mouth metal dental restorations, e.g. made of gold or zirconium, are often used. In sections of the mouth which are visible, usually other materials are preferred which optically better suit to the appearance of natural teeth. For example, ceramic materials, composite materials, fiber-reinforced composites or acrylic glasses (Polymethylmethacrylate—PMMA) are commonly used.
As mentioned, the materials of crows are typically chosen in consideration of the requirements for being used as teeth such aesthetic requirements, mechanical conditions and the like. However, for being directly placed on implants which are typically made of titanium or on remainders of original teeth these materials are often not suitable. Therefore, usually an intermediate structure is provided between the dental restoration and the implant or remainder. Widespread intermediate structures are bases or abutments which are cemented to the crowns or restorations. For example, for being connected to titanium implants often crowns are cemented and/or bonded to titanium bases which are then placed on and connected to the implant.
Typically, restorations are cemented on bases or abutments outside or inside the mouth by a dental technician or dentist. Thereby, specific adhesives are used as cements wherein many cements are mixed of plural components before being applied. The cemented bases and restorations are then connected to the implants or remainders in the mouth wherein the bases contact the implants or remainders. Often, the dental restoration together with the base is fixed to the implant by means of a screw axially projecting through the dental restoration and the base into the implant.
For cementing a dental restoration on a base, often a model is used. For that purpose, at least a portion of the mouth in which an implant is set for mounting the dental restoration is modelled by a dental technician or a dentist using known modelling techniques. However, even though such model based cementing allows for precisely cementing the restoration to the base and for providing sophisticated cemented restoration-base-structures it is comparably cumbersome.
For making the cementing process faster and cheaper many dental technicians or dentists do manually cement the dental restoration to the base. Thereby, often a screw hole of the base which typically has a hollow interior is closed by a piece of wax or an elastic plug such that no cement can enter the interior of the base. The elastic plug typically is adapted to the geometry of the base in order to allow a safe closing. However, considering that dental restorations and particularly bases usually are comparably small such manual cementing often provides results of reduced quality. For, example often the cement is not regularly or uniformly distributed between the crown and the base such that the connection is not consistently strong. Also, often the crown can manually not be precisely positioned or oriented such that a reduced comfort and a reduced usability may result. Furthermore, overdosed cement may escape the restoration-base-structure which can lead to inflammation of the gum or the like.
Therefore, there is a need for a system allowing for a precise, safe and cost efficient connection of a dental restoration to a dental implant.

System for connecting a dental restoration to a dental implant


A memory cell includes a first transistor and a second transistor. The first transistor is configured as an erase capacitor, and the second transistor is configured as a program transistor. Gates of the first and second transistors are coupled together to form a floating gate. During an erase operation, a first voltage (like 12V-24V) is applied to the first transistor, such as to a source, a body, and a drain of the first transistor. A second voltage (like ground) is applied to the second transistor, such as to a source and a body of the second transistor. A drain of the second transistor could be grounded. The first and second voltages cause electron discharge from the floating gate through the first transistor and electron injection through the second transistor onto the floating gate. This helps to prevent an over-erase condition from forming in the memory cell.

Conventional non-volatile memory (NVM) cells are routinely used in electronic circuitry, such as electronic consumer devices. A typical non-volatile memory cell often includes multiple transistors with a floating gate. A charge stored on the floating gate typically represents the logical value stored in the non-volatile memory cell.
Conventional non-volatile memory cells often suffer from a problem known as over-erasure. Over-erasure occurs when the floating gate of a non-volatile memory cell is positively charged during an erasure of the non-volatile memory cell. This positive charge could prevent subsequent programming of the non-volatile memory cell. This positive charge could also allow only a weak subsequent programming of the non-volatile memory cell, meaning the non-volatile memory cell provides a less-than-expected current after programming (which makes it more difficult to determine the programming state of the memory cell). Either of these problems may lead to a program failure of the non-volatile memory cell.
While various techniques have been developed to combat over-erasure, production irregularities associated with the non-volatile memory cells make it difficult to define a uniform erase procedure. One example production irregularity is the variations in charges held by the floating gates in non-volatile memory cells after fabrication. Other example production irregularities include variations in the transistor threshold voltages, gate oxide thicknesses, and doping concentrations in the non-volatile memory cells.
Solutions have been proposed to inhibit over-erasure while considering such production irregularities. However, these solutions typically require additional components, which increase the cost of the memory cells. These solutions also often optimize each individual memory cell's erase condition, which typically makes the erase time too long for use with large-scale memory cell arrays. In addition, these solutions often do not work when attempting to erase an entire memory cell array or when attempting to erase a memory cell array block-by-block because the memory state distribution (how many cells are in the "0" state and how many cells are in the "1" state) is unpredictable before the erase operation.
Another technique for combating over-erasure involves applying a larger programming voltage to the source of a program transistor in a non-volatile memory cell. A particular example could involve a 40% increase over a normal programming voltage, such as 7V compared to a 5V normal programming voltage. However, this results in higher power consumption by the non-volatile memory cell. This technique is also not immune to production irregularities associated with the non-volatile memory cells.

Non-volatile memory cell that inhibits over-erasure and related method and memory array


A structure for a chip or chip package is disclosed, with final passivation and terminal metallurgy which are mechanically decoupled but electrically coupled to the multilayer on-chip interconnects. This decoupling allows the chip to survive packaging stresses in the final passivation region, with strain relief from the decoupling region and compliant leads therein, so that on-chip interconnect levels do not feel these external packaging or other stresses. This structure is particularly preferred for on-chip interconnects consisting of Cu and low-k dielectric, the latter having inferior mechanical properties relative to SiO2. The decoupled region extends over all chips on the wafer. It may also extend into the edgeseal or dicing channel region so as to allow chip dicing and retention of this mechanical decoupling all around every chip on the wafer.

This invention relates generally to interconnect structures for high-speed microprocessors, application specific integrated circuits (ASICs), and other high speed ICs, and more specifically, to a compliant passivated edge seal for low-k interconnect structures. This invention provides computer chips with improved mechanical integrity in the assembly and packaging, and also provides many additional advantages which shall become apparent as described below.
In semiconductor fabrication, insulating, semiconducting, and conducting layers are formed on a substrate. The layers are patterned to create features and spaces, forming devices, such as transistors, capacitors and resistors. These devices are then interconnected to achieve a desired electrical function, thereby producing an integrated circuit (IC). The formation and patterning of the various device layers are achieved using conventional fabrication techniques, such as oxidation, implantation, deposition, epitaxial growth of silicon, lithography, etching and planarization.
To increase throughput, a plurality of ICs are fabricated on a wafer in parallel. Thus, for example, a wafer may contain multiple IC units which have been formed on the planar surface area of the wafer. Each IC is a self contained entity surrounded by its own boundary region using orthogonal axes that are referred to as dicing channels or scribe lanes. Generally, these channels may have a width of about 50 to 100 μm. The ICs are typically separated into individual chips or "die" by cutting in this channel in a process known as "dicing" or "singulation". Conventional dicing techniques include sawing with a diamond wheel, laser cutting, and "scribe and break". As the dicing tool cuts or scribes the wafer, chips and cracks in the surface and substructure often result. Such cracks can propagate into critical areas within the IC in response to packaging stresses, and may cause permanent circuit failure.
To increase chip performance, wiring capacitance is reduced by changing from the industry-standard dielectric material SiO2 (having a relative dielectric constant of about 4.0) to lower dielectric constant ("low-k") insulators surrounding the interconnects. These low-k materials come at a significant disadvantage of loss of mechanical properties such as hardness and elastic modulus, and other forms of robustness and resistance to failure due to internal and external stresses. In particular, it has become a problem to probe, dice, and package chips containing low-k insulators without causing fracture, chipping or cracking of the dielectric material, and pullout of the terminal metal pads. There is therefore a need to isolate these weak on-chip materials from the harsh external environment and stresses associated with assembly and packaging.
Typical prior art approaches have adopted a hard dielectric passivation layer such as a silicon nitride material. For example, U.S. Pat. No. 5,742,094 discloses a sealed semiconductor chip. A hermetic seal consisting of a thin SiN passivation layer and a Ni passivation layer is selectively deposited on the chip surface. It has been observed, however, that when a low-k dielectric material is used as the inter-metal dielectric within the active area of the chip, such hard passivation layers do not adequately protect the device from fracture, chipping or cracking of the dielectric material, and pullout of the terminal metal pads.
Other prior art approaches combine a hard dielectric passivation layer such as a silicon dioxide or silicon nitride with an overcoat of a more compliant material such as a polyimide. For example, U.S. Pat. No. 6,383,893 discloses a hard passivation layer (124) consisting of inorganic insulators such as SiO2 or SiN covering the wafer, and a soft passivation layer (125) consisting of polyimide overlying the hard passivation layer. U.S. Pat. No. 6,271,578 discloses a similar structure. Again, it has been observed that when a low-k dielectric material is used as the inter-metal dielectric within the active area of the chip, a hard passivation layer in contact with the active device area does not adequately protect the device from fracture, chipping or cracking of the dielectric material, and pullout of the terminal metal pads. The soft passivation layer overlying the hard passivation layer fails to alleviate this problem.
Another prior art approach disclosed in U.S. Pat. No. 5,665,655 involves the use of a crackstop structure, specifically a groove surrounding the active region on a chip. In this structure, a dielectric material (3) which can be polyimide is deposited over the substrate including the active device regions, and then a hard passivation layer (11) of, for example, silicon nitride is deposited over the structure. When the dicing operation is performed, however, the sidewalls of the chip remain in contact with the substrate material, which is typically a semiconductor material such as silicon. Microcracks occurring in silicon substrates tend to propagate very rapidly, and would therefore lead to failures in the adjacent low-k dielectric material. Thus, this structure also fails to protect the device from fracture, chipping or cracking of the dielectric material, and pullout of the terminal metal pads.
Therefore, a need remains in the art for a structure and process to isolate the weak on-chip materials from the harsh external environment and stresses associated with assembly and packaging.

International Business Machines Corporation


A system and method are provided for providing access to educational content in a private browsing mode. A private browsing session is initiated that provides to an incognito user access to an educational account associated with a user of the educational content, wherein the educational account includes a set of stored user actions associated with the educational content. The incognito user is associated with the user. The incognito user is permitted to re-execute the set of user actions within the private browsing session without the re-executed actions being stored in the user account.

1. Field
The present disclosure generally relates to providing online educational courses, and particularly to providing access to educational content in a private browsing mode.
2. Description of the Related Art
Many educational institutions including colleges and universities provide many courses online in addition to offline courses. Traditionally, colleges and universities award credit for classroom hours attended, conferring degrees based on students' completion of a certain set of courses for a given number of credit hours. More recently, educational institutions provide various learning methods such as, for example, traditional credit hour learning methods in a lecture hall, traditional credit hour learning methods online, learning by tutoring (traditional or online), remote learning, etc.

System and method for providing access to educational content in private browsing mode


A sunshade apparatus is disclosed for use with recreational chairs having a seat back. The sunshade has a rigid support to which upper edge clips and side edge clips are connected for releasable attachment to the seat back upper edge and seat back side edge, respectively. The side edge clips can rotate about the support in a generally horizontal plane, and the side edge clips are constructed in a manner to flex in a generally vertical plane. The upper edge clips have a hook portion to enable the sunshade to hang on the seat back upper edge. A canopy frame, covered with a shade producing cover, is pivotally attached to the support. When not in use, the canopy frame can be pivoted to a collapsed, generally flat configuration with the support.

Recreational chairs of various types, such as lawn chairs, patio chairs, lounge chairs, and the like, are known. With the growing awareness of the harm caused by excessive sun exposure, there has been increased interest in developing sunshades for use with recreational chairs.
Large umbrellas have been used for many years to provide shade for recreational chairs. However, large umbrellas are often too bulky and obtrusive for many uses. Smaller canopy sunshades have been proposed in the art. These sunshades have been clamped to recreational chairs using specially designed clamps, brackets, and gears. Some sunshades have been manufactured integral with the chair. Most of the known sunshade devices are not capable of being used on a differently sized chairs. Many of the specially designed clamping devices fail to provide the strength and stability needed to support the sunshade. Furthermore, Most of the existing sunshade devices cannot be quickly attached to and removed from the recreational chair.
There is, therefore, a need in the art for a sunshade apparatus for recreational chairs which can be quickly attached to and removed from differently sized chairs. There is also a need in the art for a recreational chair sunshade apparatus which is strong and stable in operation.
Such recreational chair sunshade is disclosed and claimed herein.

Sunshade apparatus for recreational chair


A wheel suspension for vehicles that includes leaf spring assemblies mounted in pairs on each side of the vehicle in the longitudinal direction of the vehicle and also at least one damper device mounted on the vehicle in conjunction with at least one wheel axle. The wheel suspension also has a central section of each leaf spring assembly which is mounted rotatably relative to an attachment device fixed to the vehicle, the ends of each leaf spring assembly being attached movably relative to the vehicle, where at least one of the ends of each leaf spring assembly supports a wheel axle and a damper device.

Wheel suspensions including leaf springs are common for heavy-duty vehicles, especially for vehicles built on a frame made of longitudinal beams. Two or more leaf springs are as a rule mounted in the form of a leaf spring assembly attached at its ends to the underside of the frame. In order to allow a resilient movement of an axle mounted in the center of the assembly, one end of the assembly can be movably mounted relative to the frame, the leaf springs being displaceable in the longitudinal direction.
A conventional wheel suspension of this kind requires two attachment points on the frame. This contributes to problems with the packing of other components and equipment which have to be mounted on and around the frame. The problem is especially great in connection with front-wheel suspensions, where components for suspension and steering have to be adapted to the space for the engine. The problems are correspondingly greater for vehicles with twin front axles where two leaf spring assemblies carry a bogie suspension with two axles. For vehicles with bogie suspension, problems of variation in the toe-in of the front wheels can arise on account of different stiffness in the spring assemblies. As a rule, a conventional wheel suspension with leaf springs also requires support by reaction struts and link arms. Each such component added to the wheel suspension increases the weight of the vehicle.
The conventional solution with an axle mounted in the center of a leaf spring assembly can also give rise to further problems. An example of this is the tendency of the wheel bearing housing to be rotated during braking of the vehicle, something that is known as wind-up stiffness, with an attendant change in camber.


Disclosed herein is an X-ray imaging apparatus. The X-ray imaging apparatus includes at least one X-ray emitter which is configured to irradiate an object with X-rays at a plurality of X-ray emission positions, an X-ray detector which is configured to detect X-rays which are emitted by the X-ray emitter and to convert the detected X-rays into an electric signal, and an image processor which is configured to acquire a plurality of original X-ray images which respectively correspond to the X-ray emission positions from the generated electric signal and to estimate a virtual X-ray image which is acquirable at an X-ray emission position located between at least two of the plurality of X-ray emission positions, based on at least two of the original X-ray images.

1. Field
Exemplary embodiments relate to an X-ray imaging apparatus and an X-ray image processing method.
2. Description of the Related Art
X-ray imaging apparatuses are devices which may be used to visually identify, diagnose and detect matter, tissues, and structures inside an object, such as the human body and animals, or substances inside various luggage cases using X-rays (also referred to as Roentgen rays). For example, an X-ray imaging apparatus may be used to detect abnormal tissues, such as lesions or abnormal materials, inside a human body, to identify an inner structure of an object or components, or to scan luggage in an airport or the like.
In particular, an X-ray imaging apparatus emits X-rays toward an object, such as a human body or the like that is placed on a support table or at a predetermined position, from a predetermined direction, e.g., from a upward direction or a lateral direction, detects the emitted X-rays, and generates an X-ray image based on the detected X-rays, in order to identify the inside of the object.
An X-ray imaging apparatus uses, when a predetermined object is irradiated with X-rays, absorption or transmission characteristics of the X-rays with respect to matter based on properties of the matter through which the X-rays pass, e.g., density or the like.
Examples of the X-ray imaging apparatus include general X-ray imaging apparatuses and computed tomography (CT) and full field digital mammography (FFDM) apparatuses that acquire an image by using various kinds of X-rays.
Among these X-ray imaging apparatuses, an FFDM apparatus captures an image of the female breast and detects lesions, such as cancerous tissues, inside the breast. The FFDM apparatus also acquires an X-ray image by irradiating a female breast with X-rays and detecting X-rays which have propagated through the breast. A process of performing X-ray imaging of a breast by using the FFDM apparatus will now be described in detail. The breast is placed on a support plate, an upper surface of which is flat, and the breast is compressed by using the support plate and a compressor, thereby increasing an area to be irradiated with X-rays. Thereafter, an X-ray emitter which is located above the support plate irradiates the breast which is compressed by the compressor with X-rays, thereby finally acquiring an X-ray image which may be used for observing an inner structure of the breast.

X-ray imaging apparatus and X-ray image processing method


A local phase filter (315) for pre-processing data (310) including a watermark (320) is disclosed. The data (310) is pre-processed before detecting the watermark by correlation of the data (310) with the watermark (320). The local phase filter (315) starts by dividing the data (310) into a set of smaller sub-spaces. The frequency coefficients of the data contained in each sub-space are then computed, and the frequency amplitudes of the frequency coefficients are then spectrally shaped. Preferably, the amplitudes of the frequency coefficients of the sub-space are set to a predetermined function. Finally, filtered watermarked data is formed, having the same size as that of the data (310), by adding the filtered data of each sub-space together in the sub-space's original position.

With the advent of digital multimedia data and digital multimedia data distribution, protection of such digital multimedia data against unauthorised copying and dissemination have become an issue for multimedia data publishers and authors. One technique used to identify ownership is to embed a pattern or patterns into the data, such that the embedded pattern is typically imperceptible to an observer. Such a pattern is called a watermark pattern, or simply a watermark. The presence of the watermark pattern can be detected in copied data by the owner of the original data, thereby proving their ownership.
A difficulty arises with respect to embedding watermark patterns into the data in such a way that the watermark patterns are both imperceptible to the human senses, and for each embedded watermark pattern to be reliably detected. In general, the watermarked data may be transformed or processed, making the detection of the watermark patterns more difficult to reliably detect. Processing that is often applied to image data is printing and then subsequent scanning of the printed image. During the printing and scanning processes, the high frequency components of the watermark pattern are often attenuated. Other processing that typically adversely affects the reliable detection of the watermark pattern includes interpolation during image rotation or scaling, or even malicious attack.
Several watermarking schemes use spread-spectrum signals as watermark patterns. Two advantages of using spread-spectrum signals as watermark patterns are the very sharp peaks obtained when using correlation to detect the watermark pattern, and also the presence of relatively large high-frequency components, which are generally less perceptible than low frequencies.
Because images commonly contain a predominance of low frequencies, direct correlation of a watermarked image with the spread-spectrum embedding watermark pattern will be dominated by the low frequencies of the image, resulting in a blurred correlation image in which correlation peaks, corresponding with the positions where the watermark patterns were embedded in the image, may not be discernible.
A related problem is the problem of correlation of data features with the watermark pattern during correlation, also causing interference. While usually not a problem with pseudo-random noise watermarks, this can be a problem with watermark patterns based upon logarithmic radial harmonic functions. For example, if the features of an image contain strong curved fringes, such as an image of spiral sea shells, additional noise may be caused during correlation of such an image with a logarithmic radial harmonic function based watermark pattern, which may obscure the correlation peaks.
Occasionally special forms of correlation are used to address this problem and restore the peaks.
One such special form of correlation is frequency pre-emphasis of the watermarked data before correlation with the watermark pattern. A linear or quadratic scaling factor applied to the high frequencies will reduce the influence of the data's low frequencies, and increase the influence of the flat spectrum of the watermark patterns, resulting in sharp, visible detection peaks.
Another special form of correlation often used is phase correlation in which all frequency components are set to a constant amplitude in the Fourier domain during correlation of the watermarked data with the watermark pattern. Because phase correlation weights all frequencies equally, it has the additional advantage of restoring the high frequency components of the embedded watermark patterns where they have been attenuated.
Although very effective in enhancing correlation peaks and reducing interference from the data, phase correlation and frequency emphasis are inherently applied equally over all data samples of the watermarked data, and are thus completely insensitive to any local variations in the watermarked data.

Local phase filter to assist correlation


A biological wastewater treatment process and modular apparatus wherein activated sludge is recirculated in all of aeration, fluidized bed and return sludge phases in the apparatus.

The safe and efficient collection and treatment of wastewater is vital to communal health. However, municipal wastewater collection and treatment systems have produced flow fluctuations and low wastewater contaminant concentrations.
The biological wastewater treatment processes and facilities based on the activated sludge method consist of three major components: aeration tanks or zones, secondary sedimentation phase tanks or zones, and return sludge systems. In a conventional process modifications all three components have been physically separated, each from the others. In order to maximize the treatment system capacity and efficiency, the activated sludge concentration measured by Mixed Liquor Suspended Solids ("MLSS") should be maintained as high as possible. However, the suspended solids sedimentation efficiency has been limited by the hydraulic conditions in the secondary sedimentation tanks. Most frequently, the gravity settling conditions have allowed maintaining the MLSS no higher than about 3,000-3,500 mg/L (ppm), which is below a level desired for optimum capacity and efficiency.
In the combined modifications herein for clarifying the sludge, the aeration tanks are (1) hydraulically connected with the phase separation for clarifying sludge and (2) the recirculation of the return sludge is provided by the intensity of aeration in the aeration zone causing liquid inflow from the clarification phase zone into the aeration zone. In this case, the MLSS can be increased to about 5,000-5,500 mg/L or more, thus increasing the capacity and efficiency of the treatment facility. Thus, the combined activated sludge treatment processes and facilities are more efficient than the conventional systems.
A goal of the present invention is to develop a cost-effective and efficient method and a combined unit that would maximize the MLSS in the activated sludge return flow, thus minimizing the intensity of aeration necessary to provide recirculation between the aeration and phase clarification zones.
The following is a brief description of the combined process-apparatus units of the prior art.
U.S. Pat. No. 6,159,365 to Kigel et al, issued Dec. 12, 2000, describes a method and apparatus for treating contaminated water, in particular wastewater, in a packaged modular treatment unit which is considered a fluidized bed reactor. The increase in the MLSS is provided by laminarization cartridges installed in the clarification zones as well as by a depressed bottom compartment in the clarification zone. Although the unit is desirable as it provides maintaining the MLSS up to about 7,000 mg/L this method and apparatus, nevertheless, has a significant drawback of the present invention compared to the currently described method and apparatus in that the necessity of increased aeration intensity for return sludge recirculation results in two-stage aeration for liquid inflow from the depressed bottom compartment.
U.S. Pat. No. 4,787,978 to Nicol, issued Nov. 29, 1988, describes a method for the purification of urban wastewater using highly concentrated activated sludge of a daily pollution sludge value ("BOD") of about 10-15 kg BOD/m3/day, instead of an earlier used concentration of about 0.5-2.5 kg, thus increasing the efficiency of the use of the reaction volume. The increase in activated sludge concentration is achieved by separate thickening of the return sludge in a laminarization (inclined parallel plate) sedimentation tank. However, this method has the substantial disadvantage of being extremely complicated when compared with the fluidized bed reactors which combine the reaction and phase separation volumes in a single apparatus.
U.S. Pat. No. 4,707,252 to Durot et al, issued Nov. 17, 1987, describes a fluidized bed reactor for aerobic or non-aerobic biological treatment of wastewater which contains a fluidized bed of granular material. The treatment process is based on the three-phase gas-liquid-solids reactions and includes a device for removing air bubbles, a device for separation of the solid particles from the bacterial floc and from the discharged effluent, and a device for recirculation of the effluent which is a means for fluidization of the bed of granular material. Despite advantages it provides, it, nevertheless, has the drawback in that it is a very complex apparatus including numerous sections and compartments as well as moving parts which add to the cost of its maintenance and operation ("O&M"). Another drawback of the reactor is likely media channeling caused by a plug-flow fluidization regime. The channeled upward flow fluidization can result in inefficient use of the fluidized bed volume.
U.S. Pat. No. 4,869,815 to Bernard et al, issued Sep. 16, 1989, describes a fluidized bed reactor for biological treatment of liquids which contains granular media fluidized by the liquid to be treated. To avoid channeling, the fluidized media is supported by a flow distribution granular transfer material. The transfer material can compensate for the major disadvantage of the plug-flow upward fluidization of the fluidized granular media—potential media channeling. However, this again has the substantial drawback of being very complex.
U.S. Pat. No. 3,956,128 to Turner, issued May 1, 1976, describes an apparatus for treating industrial and domestic wastewater which is a cylindrical system divided into two concentric tanks, thus forming an intermediate space, considered to be an aeration chamber. The liquid is oxygenated under pressure and pumped through a spiral tube for transfer of soluble impurities into insoluble suspended particles by a conventional biochemical oxidation process. The admixture from the spiral tube which is released into the central zone where the activated sludge solids rise upward due to dissolved air, flotation are then collected on the surface and returned back to the process, and the separated effluent (subnatant) is removed from the reactor. The system requires pumps and devices for saturation of the liquid with the air as well as devices for collection and removal of floated scum, again making the apparatus highly complex. Another disadvantage of the reactor is that the spiral tube, which winds around outside the tank and is needed to make the system operate, is difficult and costly to construct.

Modular biological fluidized bed reactor system


A hold-down utilizing a round, interchangeable post having annular barb-like ridges or projections that engage a workbench top through round holes that may be located at substantially any desired positions in the bench top. The post threads into a hold-down body having, on one side of the post, a yoke within which a gooseneck-shaped hold-down arm pivots on a pin received in yoke arms or forks and, on the other side of the post, a screw pressure point and T-shaped slot for receiving the head of a clamping adjustment screw that is journaled through one end of the clamping arm. The other end of the clamping arm terminates in a foot with a rounded pad for exerting pressure against a workpiece.

This invention relates to woodworking benches and means for temporarily fixing workpieces to such benches.
A wide variety of fixtures and devices for temporarily fixing a workpiece to a woodworking bench have been developed over the years. Among them are hold-downs that press the workpiece against the workbench top or, in some instances, an edge or side of the workbench.
Perhaps the oldest such hold-down, sometimes known as a "classic" hold-down, consists of a single-piece metal apparatus having a straight round post and a gooseneck that extends out and down from the post to terminate in a foot that presses against the workpiece. The post is inserted in a hole in the workbench top and tapped so that the post cocks within the hole in the top as the gooseneck is flexed to apply pressure on the workpiece. The principal disadvantage associated with this type of hold-down is the difficulty of controlling it. It is very difficult to obtain controlled clamping pressure because such a fixture must be manipulated with a hammer. Additionally, use of such a hold-down over time enlarges the hole in the bench at the top and bottom because of repeated impact and wear of the post against the bench hole into which it fits.
A second type of bench hold-down or "holdfast" has a post that is received in a collar that must be permanently mortised and fixed into the workbench top. Ribs cast into the inside of the collar mate with ribs cast on one side of the post in order to prevent its withdrawal from the collar during use. A hold-down arm terminating in a pivotable foot is itself pivotably mounted on a projection from the top of the post and may be adjustably pressed against a workpiece by the action of a handscrew journaled through the end of the arm opposite the foot so that the screw bears against the top of the post causing the arm to pivot down as the screw is advanced. This type of hold-down permits more easily adjusted clamping pressure than the classic hold-down but can be used only where the required mating collar has been mounted in a workbench.
A third type of hold-down is similar in appearance to one-half of a conventional cast iron C-clamp, including the clamping screw but with a body that terminates in a foot that rests against a workbench top and is held in place by a bolt mounted in the bench top. The clamping capacity of this type of hold-down is limited by the length of the clamping screw and height of the clamping body and typically approximates only three to four inches. Additionally, clamping pressure can be applied only to a portion of a workpiece close to its edge because the reach of this type of hold-down is very limited. Like the pivoting hold-down described above, the clamping type of hold-down can be used only in positions where the securing fixture or bolt have been located in a workbench.
A fourth type of hold-down, somewhat similar to the clamp-type described above, substitutes a smooth round post for a portion of the clamp body, which post is received in a hole in the workbench top. Because the post is smooth, it is held in place solely by the limited friction between the post and the sides of a hole in the bench top, and the post must tilt in order to do so. As a consequence, however, it works well only with relatively thin bench tops that have hole diameters adequate to permit the desired tilt. Such hold downs will not work at all, however, if the hole is too large because the post will simply slip within the hole. Additionally, because the arm in this type of hold-down is rigidly fixed to the post, advancing the screw that applies force against the workpiece through a pad or foot on the end of the screw tends to cause the substantial friction between the foot and the workpiece to resist further canting of the post in the workbench top hole. This can cause the post to slip in the workbench.