A thin film transistor includes: a lower gate electrode on a substrate; a gate insulating layer on the lower gate electrode; a first semiconductor layer on the gate insulating layer; a source electrode on the first semiconductor layer, a drain electrode on the first semiconductor layer and spaced apart form the source electrode; a second semiconductor layer on a channel region of the first semiconductor layer and on the source electrode and the drain electrode; a passivation layer on the second semiconductor layer; and an upper gate electrode disposed on the passivation layer, corresponding to the channel region.

1. Field
Embodiments of the invention relate to a thin film transistor, and more particularly, to a thin film transistor capable of low-voltage driving and a display device including the thin film transistor.
2. Description of the Related Art
Display devices are classified into types including liquid crystal display ("LCD") devices, organic light emitting diode ("OLED") display devices, plasma display panel ("PDP") devices, electrophoretic display ("EPD") devices, and the like, based on a light emitting scheme thereof.
A thin film transistor ("TFT") used in an LCD device or an OLED device is used as a switching element for controlling operation of each pixel and a driving element for driving a pixel. In this instance, the thin film transistor serves as an ON/OFF switch that allows or blocks a transmission of charge or power to a pixel electrode.
In general, such a thin film transistor includes a source region and a drain region doped with high-concentration impurities, an active layer having a channel region formed between the source region and the drain region, a gate electrode insulated from the active layer to be disposed in an area corresponding to the channel region, and a source electrode and a drain electrode contacting the source region and the drain region respectively.
The active layer includes a semiconductor material such as amorphous silicon ("a-Si") or polycrystalline silicon (polysilicon). In a case of the active layer being formed of amorphous silicon, carrier mobility therein is relatively low and thus a high-speed driving circuit may be difficult to be provided. In a case of the active layer being formed of polycrystalline silicon, carrier mobility therein is relatively high while a threshold voltage is non-uniform.
In recent times, research on the use of an oxide semiconductor as an active layer is being conducted in earnest. An oxide thin film transistor in which an oxide semiconductor is used as an active layer may be manufactured in a low-temperature process. In addition, due to having an amorphous shape, such an oxide thin film transistor may be convenient to be provided as a large-area oxide thin film transistor and may have an excellent electric characteristic, similarly to polycrystalline silicon.
It is to be understood that this background of the technology section is intended to provide useful background for understanding the technology and as such disclosed herein, the technology background section may include ideas, concepts or recognitions that were not part of what was known or appreciated by those skilled in the pertinent art prior to a corresponding effective filing date of subject matter disclosed herein.

Thin film transistor and display device including the same


A method for retrofitting DNA in a single-copy or high-copy vector, such as a fosmid or BAC, whereby an artificial transposon is used to introduce a conditional multi-copy origin of replication (“ori”) into the DNA in said vector. Following random in vitro or in vivo transposition of the ori-containing transposon into DNA in the single-copy or low-copy vector, the resulting insertion clones are introduced into a special host strain that contains a gene which encodes a polypeptide required for replication from the multi-copy ori. However, since the gene for this polypeptide is expressed from a tightly-regulated inducible promoter, the polypeptide is not expressed in the absence of inducer. On addition of inducer to the culture medium, the host cell synthesizes the polypeptide, which in turn activates replication from the multi-copy ori, thereby increasing the amount of clone DNA synthesized by the cell.

1. Field of the Invention
This invention relates to novel methods and compositions for retrofitting DNA in single-copy or low-copy vectors with the capability of replicating at higher copy number by contacting the DNA in vitro or in vivo with an artificial transposon containing a conditional multi-copy origin of replication ("ori").
2. Prior Art
Bacterial Artificial Chromosome (BAC) vectors are now widely used in sequencing projects (Roach, J C, Siegel, AF, van den Engh, G, and Hood, L. "Gaps in the Human Genome Project. Commentary, Nature 401, 843–845, 1999; Ross-McDonald, P, et al. "Large-Scale Analysis of the Yeast Genome by Transposon Tagging and Gene Disruption." Nature 402, 413–417, 1999; Mahairas, G G, et al., "Sequence-Tagged Connectors: A Sequence Approach to Mapping and Scanning the Human Genome. Proc. Nat. Acad. Sci 96: 9739–9744, 1999; Birren, B, Mancino, V, and Shizuya, H. "Bacterial Artificial Chromosomes." In: Genomic Analysis: A Laboratory Manual. Volume 3, pp. 241–295, 1999. Cold Spring Harbor Press. Cold Spring Harbor, N.Y.; Frangeul, L, Nelson, K E, Buchreiser, C, Danchin, A, Glaser, P, and Kunst, F. "Cloning and Assembly Strategies in Microbial Genome Projects." Microbiology 145, 2625–2634, 1999) because they can be used to clone and stably maintain high molecular weight DNA in E. coli host cells. BAC libraries containing genomic DNA inserts of up to about 300 kb are useful tools for generating sequence data. While BAC cloning has no doubt improved the ability to sequence and analyze large genomes, in certain cases BAC sequencing presents significant technical challenges. The prime remaining challenge and still a significant disadvantage of working with BAC DNA is the difficulty of obtaining adequate yields of BAC DNA from small (3 ml) cultures, a feat that is difficult at best. The low copy number of BACs (1–2 copies per host cell) yields only small quantities of DNA, which hampers sequencing projects by decreasing throughput and DNA purity compared to clones in high-copy vectors. BAC DNA can be isolated from larger amounts of culture, but this is more laborious and increases cost and time. Also, for high throughput applications, it is desirable to reduce BAC-containing culture volume below 5 ml in order to facilitate automated purification of BAC DNA. Problems encountered with BAC clones also apply to clones in fosmids and other low-copy vector cloning systems.
Inducible genes have been studied for many years and have been exploited extensively in molecular cloning processes, but have not been studied extensively as a means for at-will control of the copy number of episomal DNA in bacteria. Recently, a system was disclosed for inducing amplification of BACs (Wild, J, et al. Gene 223, 55–66, 1998; Hradecna, Z., et al., Microbial and Comp. Genomics, 3, 58, 1998; U.S. Pat. No. 5,874,259) In these disclosures, the inventors adapted a mutant version of the trfA gene product, the control element for an origin of replication called oriV from plasmid RK2, to an inducible system under the control of the araB promoter. Induction of a mutant trfA gene using the araB promoter enabled replication and amplification of BACs containing oriV.
Other inventors have used an inducible promoter, including an araB promoter, in order to express a protein which is downstream of (i.e., 3′ of) the promoter on a replicable vector (E.g.s, U.S. Pat. Nos. 5,028,530; 6,242,219; and 6,274,344). However, an inducible promoter is used in the compositions and methods of the present invention to express a protein from a gene on a host chromosome and is not used to express a gene on a replicable vector.
Modifying pir-containing E. coli strains so that the wild-type or a mutant pir gene is under the control of an inducible promoter also offers the possibility of at-will control of episomes containing the R6Kγ ori. The R6Kγ ori was originally used for controlling the copy number of extrachromosomal elements in bacteria, depending on the strain of E. coli host bacteria employed (Pillarisetty, Va., et al., "The replication initiator "Pi" of plasmid R6K specifically interacts with the host-encoded helicase dnaB." Proc. Nat. Acad. Sci. (USA), 93, 5522–5526, 1996). It has found application in the construction of non-viral vectors for DNA vaccines (Suter, M, et al. "BAC-VAC, A Novel Generation of DNA Vaccines: A Bacterial Artificial Chromosome (BAC) Containing a Replication-Dependent, Packaging-Defective Virus Genome Induces Protective Immunity Against Herpes Simplex Virus 1." Proc. Nat. Acad. Sci. (USA) 96, 12697–12702, 1999). Hansen, et al. (Hansen, L H, et al. "Chromosomal Insertion of the Entire Escherichia coli Lactose Operon into Two Strains of Pseudomonas, using a Modified Mini-Tn5-Delivery System." Gene 186, 167–173, 1997) recently described the use of the R6Kγori in Tn5-based mini-transposons for moving the lac operon from E. coli into Pseudomonas species.
Recently, several laboratories have developed novel in vitro and in vivo transposon insertion systems. For example, Goryshin and Reznikoff showed that a hyperactive mutant form of Tn5 transposase catalyzes random transposition of an artificial transposon comprising almost any DNA into any other DNA in vitro so long as the artificial transposon has at its termini properly-oriented 19-basepair Mosaic End (ME) sequences that are recognized by the transposase (Goryshin, I. Y., and Reznikoff, W. S., J. Biol. Chem., 273, 7367, 1998). Further work also demonstrated that, in the absence of magnesium cations, one can make a stable synaptic complex between a hyperactive Tn5 transposase and an artificial Tn5 transposon (Goryshin, I. Y., et al., Nat. Biotechnol., 18, 97, 2000). This complex, which has been designated a "Transposome™ complex (EPICENTRE), can be electroporated into living cells, where the intracellular magnesium cations activate the transposase and generate random transposon insertions into cellular DNA in vivo. Various additional aspects of this system are disclosed in U.S. Pat. Nos. 5,925,545; 5,948,622; 5,965,443; and 6,159,736, incorporated herein by reference. Additional information is also available in the 2001 and subsequent editions of the catalog of EPICENTRE Technologies Corporation, Madison, Wis., incorporated herein by reference, and on-line at www.epicentre.com under the heading of "Transposomics™ & EZ::TN™ Transposon Tools," also incorporated herein by reference. In vitro systems have also been described for other transposons and in vitro transposon insertion kits are commercially available based on the bacteriophage Mu system (Finnzymes, Invitrogen) and on the Tn7 system (New England Biolabs, Inc.).
The advantage of using the Tn5-based Transposome™ system to deliver a R6Kγ ori rather than other Tn5-based systems is that under defined conditions, a single transposon insertion event occurs on either chromosome or extrachromosomal DNA. That is, since the artificial transposons used with Transposome™ systems or other EZ::TN™ insertion systems, as described in the 2001 and subsequent editions of the EPICENTRE catalog, do not encode a transposase gene, the inserted artificial is stable in the insertion site.
It is known that BACs exist stably in only one or two copies in host bacteria (Ross-McDonald, P., et al. "Large-Scale Analysis of the Yeast Genome by Transposon Tagging and Gene Disruption." Nature 402, 413–417, 1999; Tao, Q. and Zhang, H. "Cloning and stable maintenance of DNA fragments over 300 kb in Escherichia coli with conventional plasmid-based vectors." Nucleic Acids Res., 26, 4901–4909, 1998). This is an inherent disadvantage for using BACs directly as sequencing templates due to the small amount of DNA obtainable from small cultures. Tao, et al. (ibid) reported that using RK2-based plasmid vectors to increase the copy number of large clones (>300 kb) in an E. coli DH10B™ (Invitrogen) host permitted the maintenance of 5 to 8 copies per cell. While this system for BAC amplification appeared promising, inconsistent results were reported for cloning of human DNA.
What is Needed in the Art
What is needed in the art are improved vectors, including, but not limited to BAC, fosmid and plasmid vectors, into which DNA can be cloned and maintained in host cells at approximately one copy per host cell, but which can be induced to at least about five copies per cell on demand. Preferably, what is needed are vectors into which DNA can be cloned and maintained in host cells at approximately one copy per host cell, but which can be induced to at least about ten copies per cell. Most preferably, what is needed are vectors into which DNA can be cloned and maintained in host cells at approximately one copy per host cell, but which can be induced to at least about twenty or more copies per cell. What is needed in the art are methods that permit researchers to increase the copy number of clones in single-copy BACs, fosmids, or other low-copy vectors at will. What is needed are improved methods and vectors that permit successful cloning and stable maintenance at approximately one copy per cell of DNA comprising repetitive sequences, or AT-rich or GC-rich sequences, or sequences that are toxic or detrimental for the host cell, including without limitation, sequences that comprise one or more genes that encodes one or more peptides or proteins which is toxic or detrimental for the host cell when expressed. In short, what is needed are improved vectors that permit successful cloning and stable maintenance of difficult-to-clone sequences at approximately one copy per cell, but which can be easily and rapidly induced to higher copy number on demand.
Also needed in the art are improved E. coli host strains that contain a gene which encodes at least one protein required by a multi-copy ori for replication, which gene is expressed from a tightly regulated (i.e., "not leaky"), yet easily inducible transcription promoter. Preferably, under induction conditions, these improved host strains support multi-copy replication of appropriate vectors. Most preferably, under induction conditions to multi-copy replication, clones of different clone size in improved host strains yield approximately similar quantities of DNA.
Also needed in the art are compositions and methods that permit single- or low-copy vectors or clones in such single- or low-copy vectors to be easily and rapidly converted to vectors or clones which are capable of multi-copy replication following induction in a suitable host cell. What is needed are systems for using transposons to insert chemically-inducible origins of replication (ori's) in vitro and in vivo into single- or low-copy vectors or clones in such single- or low-copy vectors. What is needed are systems comprising a transposons with a multi-copy ori and an E. coli host strain having at least one gene that can be induced at will to express a protein that is required by the specific multi-copy ori for replication to occur. What is needed are methods for using transposon systems with inducible multi-copy ori's for facilitating sequencing. What is needed are transposon systems with inducible multi-copy ori's for retrofitting existing single-copy BAC libraries by transposon insertion in vivo or in vitro, making existing clones more amenable for automated, high throughput sequencing.
What is needed in the art are transposon systems with inducible multi-copy ori's for in vitro or in vivo insertion directly into genomic DNA. What is needed are copy-controllable systems for "rescue cloning" of genomic DNA for sequencing.
Objects of the Invention
A primary object of the present invention is to improve cloning by permitting control of clone copy number at-will. Another object of the invention is to improve sequencing, particularly high throughput sequencing, by permitting control of clone copy number at-will, most particularly by permitting control of clone copy number for clones in BAC, fosmid, and plasmid vectors.
Another primary object of the invention is to provide improved methods and vectors that permit successful cloning and stable maintenance at approximately one copy per cell of DNA comprising repetitive sequences, or AT-rich or GC-rich sequences, or sequences that are toxic or detrimental for the host cell, including without limitation, sequences that comprise one or more genes that encodes one or more peptides or proteins which is toxic or detrimental for the host cell when expressed. In short, what is needed are improved vectors that permit successful cloning and stable maintenance of difficult-to-clone sequences at approximately one copy per cell, but which can be easily and rapidly induced to higher copy number on demand.
Another primary object of the present invention is to provide improved vectors having an oriV multi-copy origin of replication in order to improve upon the invention described in U.S. Pat. No. 5,874,2590 and related patent applications, incorporated herein by reference.
Another primary object of the invention is to provide a method for using one or more artificial transposons to randomly insert an inducible multi-copy ori into clones in single-copy or low-copy vectors in vitro or in vivo. Another object of this embodiment of the invention is to generate random transposon insertion clones having primer binding sites for bidirectional sequencing of clones which are too large to sequence with a single set of sequencing reactions. Still another object of this embodiment of the invention is to eliminate the need to subclone clones larger than about one kilobase in size into smaller shatter clones for sequencing. Still another object of this embodiment of the invention is to provide a method to control clone copy number at-will at either about one copy per cell or at multiple copies per cell. An object of this embodiment is to permit stable maintenance of large clones at about one copy per cell, while permitting at-will induction to higher copy number for use in sequencing or other purposes. Another object of the invention is to provide compositions and kits comprising artificial transposons having at least one inducible multi-copy ori and, optionally having at least one selectable marker, for use in carrying out the methods of this embodiment of the invention.
Another object of the present invention is to provide a method for obtaining a suitable host strain having a gene which encodes at least one protein required for replication from the oriV origin of replication, which gene is under the control of an inducible promoter, and which host strain is an improved strain for use in the methods of the present invention and for use in the inventions described in U.S. Pat. No. 5,874,2590. Still another object of the present invention is to provide an improved E. coli strain which expresses a mutant form of the trfA gene product under the control of an inducible araB promoter, which strain provides improved results in the methods of the present invention and improved results for the inventions described in U.S. Pat. No. 5,874,2590, and related patent applications by the same inventors.
Another object of the invention was to use an inducible origin of replication in concert with a Transposome™ complex to increase BAC copy number in a suitable host cell.
Another object was to develop methods for using transposons with inducible ori's, such as, but not limited to, the oriV/trfA or R6Kγ/pir systems, and BAC vector systems using either or both, depending on the results of further experiments.
Another object was to construct chemically-inducible ori's, and then to use these to make a system consisting of copy number-controllable ori-containing transposons and complementary E. coli strains host strains that can be induced to express different levels of an appropriate ori-specific protein. An object of this aspect of the invention was to provide a system that is useful in sequencing projects by retrofitting existing BAC libraries by transposon insertion in vivo or in vitro.
Another object was to provide inducible ori-containing transposon systems that would also be useful for in vitro insertion directly into genomic DNA or, using a Transposome™ system, for in vivo insertion and for "rescue cloning" of genomic DNA for sequencing.
A primary object of the invention was to develop systems for amplification of BAC clones in host cells to improve the yield of BAC DNA from small cultures Another primary object of the invention is to provide improved compositions of an oriV/trfA inducible system with respect to applications described elsewhere (Wild, J, Sektas, M, Hradecna, Z, and Szybalski, W. "Targeting and Retrofitting Pre-existing Libraries of Transposon Insertions with FRT and ori'V Elements for in-vivo Generation of Large Quantities of Any Genomic Fragment." Gene 223, 55–66, 1998).
Another object is to provide an inducible R6Kγ/pir system by replacing the promoter region of the pir gene from E. coli EC100D™ pir+ and EC100D™ pir-116 by an inducible promoter, including but not limited to, an inducible araB promoter, under the control of a simple non-metabolizable chemical using standard recombinant DNA methods.
Another primary object of the invention is to construct inducible oriV- and R6Kγ-containing transposons, BAC cloning vectors and new E. coli host strains for the stable maintenance of multi-copy BACs.
Another object is to construct transposons containing either the R6Kγ or oriV origins of replication by using a plasmid that is specifically designed for transposon construction, i.e., pMOD-2™ (EPICENTRE), which is a plasmid that contains a ColE1 ori (for growth in a standard cloning host), an ampicillin resistance selectable marker, the outer ends (OEs) required for use with the hyperactive Tn5 transposase, PCR priming sites for amplification of the recombinant transposon, and a multiple cloning site in between the OEs.
An object of this aspect of the invention is to construct new transposons by:
a) inserting an inducible origin of replication into the multiple cloning site of a plasmid comprising the transposon construction vector;
b) Inserting a selectable drug marker [e.g., Kan(sup)R] into said plasmid;
c) transforming the recombinant, transposon-containing plasmid into a standard cloning strain of E. coli;
d) purifying the transposon-containing plasmid;
e) amplifying the recombinant transposon by PCR using standard methods (O'Mullan, P, "Direct Sequencing of BAC Clones Without Subcloning or Primer Walking." EPICENTRE Forum 7:4, 1–3, 2000. Published by EPICENTRE, Madison, Wis.), and
f) digesting the excised transposon with restriction enzymes PvuII or PshA1, to generate precise transposon ends.
Another object is to use the resulting transposons containing oriV or R6Kγ ori to introduce the inducible origins into BACs by through in vivo insertion ("Transposome") techniques.
Another primary object of the invention is to develop new strains of E. coli containing an inducible regulatory gene for activating extrachromosomal origins of replication.
An object of this aspect of the invention is to construct new strains of E. coli carrying either the inducible pir gene or inducible ParaBAD-trfA systems, capable of inducing the function of the R6Kγ or oriV, respectively.
Another object of this aspect of the invention is to construct these new strains by using existing strains of E. coli containing either the ParaBAD-trfA system or inducible promoter/pir gene systems.
Another object of this aspect of the invention is that strain constructed should have the following characteristics:    1. It must contain the origin-specific regulatory gene.    2. The regulatory gene must contain a promoter that may be induced using a simple metabolic compound (such as a carbohydrate) and otherwise remain in a state permitting the stable existence of large BACs.    3. It must not have any active recombination systems, such as recABCD, which could, in some cases, permit any extrachromosomal DNA to integrate into the host chromosome by homologous recombination.    4. The new strain should be based upon existing E. coli strains with suitable genetic pedigrees that permit identification of suitable origins of replication and controlling host-encoded regulatory genes that function as needed.
Still another object of this aspect of the invention is that construction of the strain will be accomplished using standard recombinant DNA technologies to modify existing strains of E. coli containing the pir gene (both wild-type and pir-116 mutant) that have been developed for use with existing R6Kγ-containing transposons.
Another primary object of the invention is to construct new BAC vectors containing inducible origins of replications by modification of an existing BAC vector for use in constructing BAC libraries de novo.
An object of this aspect of the invention is to construct a new, inducible vector from the existing pIndigoBAC-5 vector, a derivative of pBeIoBAC and pIndigoBAC (Birren, B, Mancino, V, and Shizuya, H. "Bacterial Artificial Chromosomes." In: Genomic Analysis: A Laboratory Manual. Volume 3, pp. 241–295, 1999. Cold Spring Harbor Press, Cold Spring Harbor, N.Y.).
Another object of this aspect of the invention is to construct a new vector by modifying the pIndigoBAC vector to contain either the oriV or R6Kγ ori.
Another primary object of the invention is to amplify BAC DNA using an inducible system.
One object of this aspect of the invention is to develop a method to generate "amplified" BAC DNA in a specific E. coli host cell using chemical induction.
Another object of this aspect of the invention is to provide methods for BAC amplification which involve maintaining the BAC at its normal 1–2 copies per cell until growth in culture reaches mid- to late-logarithmic phase and then to introduce a chemical into the culture medium that triggers the ori-regulating gene to be expressed, thereby activating the inducible ori, and leading to replication and amplification of BAC DNA.
Another object of this aspect of the invention is to provide improved methods for BAC amplification with respect to:                1. level of amplification for different sizes of BACs        2. the time required to amplify BAC DNA in an E. coli host by at least 10-fold        3. the stability of the amplified BAC DNA with respect to deletions, etc
A primary object of this aspect of the invention is that BACs used in the methods of the invention should lack of deletions or other recombination events in order to ensure that a single BAC species is present in a cell.
Another primary object of this aspect of the invention is that at least one of the inducible BAC systems developed can a) maintain a large (>200 kb) BAC in one or two copies until mid- to late-log phase in the host cell, and then be amplified by chemical induction to yield a minimum 10-fold increase in purified BAC DNA over what can be recovered from small cultures (3–5 ml) of a standard BAC using standard BAC DNA isolation methods, such as commercially-available BAC purification systems or standard alkaline lysis procedures (Birren, B, Mancino, V, and Shizuya, H. "Bacterial Artificial Chromosomes." In: Genomic Analysis: A Laboratory Manual. Volume 3, pp. 241–295, 1999. Cold Spring Harbor Press, Cold Spring Harbor, N.Y.).
Another primary object of the invention is to improve sequence analysis by using amplifiable BACs.
A primary object of this aspect of the invention is to adapt an inducible BAC system to large-scale, high throughput sequencing using automated procedures.
Another primary object of this invention is to develop inducible ori-containing transposons and vectors, as well as complementary E. coli host strains for use in systems for commercialization.
Notations and Nomenclature
The terms used herein have the following meaning with respect to the present invention:
As used herein, a "vector" is a DNA molecule in which other DNA, including, but not limited to "foreign" or "heterologous" DNA, can be operably joined so as to form a circular DNA molecule which can replicate autonomously following its introduction into a host cell. The words "foreign" or "heterologous" refer to the fact that the DNA which is operably joined to the vector is not normally present in the host cell in which it is replicated. The most common method by which the DNA is "operably joined" to a vector is by covalent joining of compatible ends by means of an enzyme referred to as a ligase, such as, but not limited to, T4 DNA ligase, by a process referred to as "ligation." The process of ligating a DNA molecule in a vector and then replicating this molecule in a host is referred to as "molecular cloning," and a product of this process is referred to as a "clone." The methods of the present invention are not limited to a particular vector or host cell, but are intended to apply to any vector and any host in which one can clone and maintain a DNA molecule at a low copy number and then, using the methods of the invention, induce the vector or its clone to a higher copy number whenever desired. By way of example, but not of limitation, a vector of the invention can be a single-copy or a low-copy BAC, fosmid, plasmid, a P1 vector, or nay other suitable vector. The host cells can be E. coli, or any other bacterial or other cells, including prokaryotic or eukaryotic cells, in which the vector is able to replicate at a low copy number, and which can be induced to higher copy number by means of an inducible ori according to the methods of the invention.
As used herein, the word "replicate" refers to the fact that the vector and the DNA to which it is operably joined is copied or reproduced or duplicated in the host cell by a process called "replication." The site on the vector DNA at which replication begins is referred to as the "origin of replication ("ori")." An origin of replication which requires the presence of another protein or another molecule in order for replication to occur is referred to as a "conditional origin of replication." A conditional origin of replication permits one to control replication by providing a means for controlling the expression or properties of the protein or other molecule which is required for replication from the ori. The number copies of a particular vector or of a clone in a particular vector varies based on a different factors, including, but not limit to, the sequence and structure of a particular origin of replication and the structure, amount, and properties of proteins which interact with the origin. For the purpose of the present invention, the oriV disclosed by the inventors comprises the sequence disclosed herein as SEQ. ID NO. 1 and said sequence is preferred in the methods and compositions of the invention. Examples of the present invention include the use of oriV or R6Kγori as an origin of replication, but the methods of the invention are not limited to the use of these ori's, and these same ori's can be modified to some extent to achieve the same effect. Based on the descriptions herein, those with skill in the art will know how to determine whether or not a particular ori is suitable for use in the invention and will be able to identify other ori's for use in the methods and compositions of the invention.
SEQ. ID NO. 1. Sequence of oriV   1GCTGGTTGCC CTCGCCGCTG GGCTGGCGGC CGTCTATGGC CCTGCAAACG CGCCAGAAAC  61GCCGTCGAAG CCGTGTGCGA GACACCGCGG CCGGCCGCCG GCGTTGTGGA TACCTCGCGG 121AAAACTTGGC CCTCACTGAC AGATGAGGGG CGGACGTTGA CACTTGAGGG GCCGACTCAC 181CCGGCGCGGC GTTGACAGAT GAGGGGCAGG CTCGATTTCG GCCGGCGACG TGGAGCTGGC 241CAGCCTCGCA AATCGGCGAA AACGCCTGAT TTTACGCGAG TTTCCCACAG ATGATGTGGA 301CAAGCCTGGG GATAAGTGCC CTGCGGTATT GACACTTGAG GGGCGCGACT ACTGACAGAT 361GAGGGGCGCG ATCCTTGACA CTTGAGGGGC AGAGTGCTGA CAGATGAGGC GCGCACCTAT 421TGACATTTGA GGGGCTGTCC ACAGGCAGAA AATCCAGCAT TTGCAAGGGT TTCCGCCCGT 481TTTTCGGCCA CCGCTAACCT GTCTTTTAAC CTGCTTTTAA ACCAATATTT ATAAACCTTG 541TTTTTAACCA GGGCTGCGCC CTGTGCGCGT GACCGCGCAC GCCGAAGGGG GGTGCCCCCC 601CTTCTCGAAC CCTCCCGG
The examples of the present invention also disclose the use of host cells which express either mutant or wild-type forms of the TrfA Protein, a product of a form of the trfA gene, or of the Pi Protein, a product of a form of the pir gene, as polypeptides which affect replication from oriV or from R6Kγori, respectively. However, the methods of the present invention apply to any ori which can be made conditional on the expression, and the invention can use any protein or other polypeptide or other factor which is required by or which supports an ori that can be used according to the invention in order to obtain multi-copy replication in a desired host.
Preferably, synthesis of a protein or other polypeptide required for replication from a particular ori in the host cells is tightly controlled (i.e., "not leaky"). Most preferably, the protein or polypeptide is controlled by means of an inducible transcriptional promoter that is operably joined "upstream of" or "5′-of" the gene encoding said required protein or polypeptide. A "transcriptional promoter" or more simply a "promoter" is a sequence on a DNA molecule which is recognized by an RNA polymerase enzyme and at which transcription, meaning synthesis of RNA, is initiated.
Transcription of DNA into RNA is required for synthesis and expression of the protein or polypeptide. There are a number of promoters known in the art which are suitable for the methods of the invention. By way of example, but not of limitation, the araB promoter, which can be induced by treating host cells with L-arabinose, and the Tet promoter, which can be induced by treating host cells with anhydro-tetracycline (Lutz, et al., Nucleic Acids Res., 25, 1203, 1997), are preferred promoters in the invention, but there are also many other suitable promoters which can be used. Those with skill in the art will also realize that accessory proteins and the genes which encode them are sometime necessary or beneficial for use in the invention, and are envisioned under the invention. By way of example, but not of limitation, the araC sequence can be linked to an araB promoter for use in the methods and compositions of the invention. As used herein, an "inducer" is a substance that activates the promoter, either by positively regulating the transcription from the promoter, or by binding to a repressor that would otherwise inhibit transcription from the promoter. In either case, the inducer activates transcription from an inducible promoter Transcription of DNA into RNA is required for synthesis and expression of the protein or polypeptide.
A "transposable element", is a DNA sequence that can move (transpose) from one site in DNA to another.
"Transposition" is the process in which a transposable element is excised from one site and inserted into a second site on the same or another DNA molecule.
A "transposase" is an enzyme that catalyzes transposition. As used herein, the enzyme can be the wild type enzyme or a mutant form of the enzyme, which may, for example, give the enzyme a desirable property, such as, but not limited to, a higher activity. One transposase used in the present invention is a hyperactive mutant form of Tn5 transposase, which is also sometimes referred to as "EZ::TN™ Transposase" (EPICENTRE). However, the invention is not limited to this enzyme, and, unless otherwise specifically limited, other transposases are also intended to be within the scope of and covered by the invention. By way of example, but not of limitation, other transposases which can be used for the methods of the invention include Tn7 transposase, Mu transposase, Mariner transposase, Tn552 transposase (Griffin IV, T J, et al., "In vitro transposition of Tn 552: a tool for DNA sequencing and mutagenesis," Nucleic Acids Res., 27, 3859–3865, 1999), Tn10 transposase, and the like.
Traditionally, a "transposon" is defined as a transposable element that carries a gene encoding a transposase, as well as a gene or genes with other functions, such as resistance to antibiotics. However, recently Goryshin and Reznikoff (Goryshin, I Y, and Reznikoff, WS, "Tn5 in vitro transposition." J. Biol. Chem., 273, 7367, 1998) showed that purified wild type and mutant forms of Tn5 transposase can catalyze in vitro transposition of any DNA that is between two properly oriented copies of a Tn5 transposase recognition sequence, which, with respect to Tn5 transposase, is usually called an "Outer End" or an "OE" sequence or an "Inner End" or an "IE" sequence, or a "Mosaic End" or an "ME" sequence, depending on the particular transposase used, but the recognition sequence for any particular transposase which can be used for the invention can also be referred to by a different name. A particular ME sequence was identified which has optimal properties for in vitro transposition using a hyperactive form of Tn5 transposase (Zhou, M A, et al., "Molecular genetic analysis of transposase-end sequence recognition: cooperation of three adjacent base pairs in specific interaction with a mutant Tn5 transposase," J. Mol. Biol., 276, 913, 1998). In view of the findings of Goryshin and Reznikoff (Goryshin, I Y, and Reznikoff, W S, "Tn5 in vitro transposition." J. Biol. Chem., 273, 7367, 1998), it will be understood that the gene for the transposase does not need to be present in order to obtain transposition, provided that a transposase is present in a reaction mixture in which the transposase has activity. Therefore, the definition of a "transposon" as used herein, which the inventors sometimes also refer to as an "artificial" transposon, is any DNA that has recognition sequences (or OE sequences or ME sequences) for the transposase such that the DNA is capable of transposase-catalyzed transposition. As used herein, the inventors intend that all transposons of the invention do not encode an active transposase gene (meaning a transposase gene that is expressed in a host cell so as to produce an active transposase), whether or not the transposon is referred to as an "artificial" transposon. It is preferable that a transposon or artificial transposon of the invention does not encode a gene for a transposase because, in the absence of an active transposase gene, the transposon is not be able to transpose to a new location in the absence of added transposase enzyme and suitable reaction conditions.
As used herein, an "EZ::TN™ Transposon" comprises any DNA that transposes into another DNA in the presence of EZ::TN™ Transposase. Any DNA between two properly-oriented 19-basepair transposase recognition sequences or ME sequences recognized by EZ::TN Transposase can serve as an EZ::TN Transposon. A growing number of EZ::TN Transposons having different selectable markers and promoters which are active in different biological systems are available from Epicentre. Examples include EZ::TN <TET-1> Transposon and EZ::TN <KAN-2> Transposon. Alternatively, custom EZ::TN Transposons may be prepared by using a Transposon Construction Vector such as PMOD™ <MCS>, or by PCR using primers containing OE Sequences, or by ligating OE Sequences to the ends of the desired transposon DNA. Although the inventors may refer to EZ::TN Transposons herein, the invention is not limited to these transposons and those with skill in the art will realize that the invention also applies to other transposons or artificial transposons. Specific EZ::TN Transposons will be designated herein as follows: The term "EZ::TN," which designates an artificial Tn5 transposon having hyperactive ME sequences, is followed by the names of each specific gene within the transposon, each of which is separated from the other by a forward slash (/); then, the names of all of the genes or genetic elements within the transposon are flanked by arrows (< >) which indicate the orientation of the terminal ME sequences; finally, this is followed by the word "Transposon" or "Transposome," as the case may be. For example, an "EZ::TN <oriV/KAN> Transposon" or an "EZ::TN <or V/KAN> Transposome" designates, respectively, an artificial Tn5 transposon or a Transposome™ complex which has the oriV origin of replication and a kanamycin-resistance gene.
As used herein, an "Insertion Reaction" refers to a reaction which results in transposition of a transposon into a target DNA. EZ::TN Transposase can catalyze insertion of an EZ::TN Transposon into any target DNA in vitro.
A "Transposome™" or a "Transposome™ Complex" as used herein means a synaptic complex formed between a transposon and a transposase, which is stable in the absence of magnesium cations, but which can catalyze insertion of the transposon into another DNA following activation by magnesium cations in vitro or in vivo (Goryshin, I Y, et al., "Insertional transposon mutagenesis by electroporation of released Tn5 transposition complexes", Nature Biotechnol., 18, 97, 2000; Hoffman, L M, et al., "In vivo transposition of transposon/transposase complexes into the genome of Saccharomyces," Current Genet., 35, 305, 1999; Hoffman, LM, et al., "Transposome insertional mutagenesis and direct sequencing of microbial genomes," Genetica, 108, 19–24, 2000). A stable EZ::TN Transposome, which can even be stored for long periods in the freezer, is formed by incubating an EZ::TN Transposon and EZ::TN Transposase in the absence of Mg2+. Some EZ::TN Transposomes, such as EZ::TN <KAN-2>Tnp Transposome, are commercially available from EPICENTRE.
By the "Transposomics™ Field," the inventors mean a field constituting the myriad in vitro and in vivo applications of Transposomes, whether the Transposome is used as a stable complex or is formed in situ in an in vitro insertion reaction.
"EZ::TN Insertion Kits" or "Transposon Insertion Kits," as used herein, refer to kits containing reagents and optimized protocols and optionally, controls, for performing in vitro insertion reactions. For example, EZ::TN Insertion Kits for inserting EZ::TN <TET-1> or EZ::TN <KAN-2> Transposons into target DNA in vitro are available from EPICENTRE.
"Transposon Construction Vectors" refer to specially-constructed vectors available from Epicentre for construction of custom EZ::TN Transposons. For example, PMOD™ <MCS> Transposon Construction Vector is a plasmid vector with a multiple cloning site (MCS) between OE Sequences recognized by EZ::TN Transposase.
When used herein, "Deletion/Inversion Vectors" refer to specially-constructed plasmid or cosmid or other circular vectors in which OE sequences are oriented in such a way that transposase-catalyzed transposition results in random unidirectional deletion or inversion of a portion of the DNA that has been cloned into a certain sites on the vector. Examples include the pWEB::TNC™ Cosmid Vector, and pPDM™-1 and pPDM™-2 Deletion Plasmid Vectors.
"Transposon Tools" refers to all kits and reagents which utilize artificial transposons or a transposase.

Methods and compositions for amplifying DNA clone copy number


A method of recording close contacts for disease control, the method including the steps of using a device to transmit identity and date/time of contact details to a similar device for each close contact. Identity details of the similar device are received and store for at least predetermined time for each close contact. At the expiry of the predetermined time the received identity details may be overwritten if the memory is full. The stored identity details are used to determine identities of persons with whom close contact had been made within the predetermined time. The device has embedded therein a semiconductor processor device, a memory device, a clock and a transmitter/receiver with an antenna.

Many infectious diseases require relatively close contact for the disease to be transmitted. For example, Severe Acute Respiratory Syndrome ("SARS") is spread through droplets of phlegm from a sneeze or cough. This requires two persons to be reasonably close—within a few meters of each other—for disease transmission.
When a patient is suspected of having a contagious disease requiring close contact for transmission, all those with whom the patient has come into close contact since contracting the disease need to be found to determine if they have also contracted the disease. This is presently conducted by circulating notices, and asking the patient. As the patient may by that stage be quite ill, this ability to recall all close contacts over several days is quite limited. If the patient is elderly, or a child, it will be severally limited. Unintentional close contact can also occur in places such as, for example, a lift where the patient will not know the identity of the persons with whom the lift was shared, or when a person uses a lift that was used by an infected patient within a transmission time of the disease.

Apparatus and method of acquiring and storing data of close contacts


The invention refers to medicine and pharmacology, namely, to biologically active peptides, which modulate purinergic signaling. For that, the peptide with the following amino acid sequence is proposed:

Pain research and treatment are significant aspects that should be considered to improve the quality of life of patients. Pain treatment is mainly based on administration of anti-inflammatory drugs such as non-steroidal anti-inflammatory drugs (NSAIDs) or steroid (corticosteroid) drugs, antidepressants and anticonvulsants, as well strong or weak opiates. NSAIDs form the most commonly used class of therapeutic products due to their high efficacy and since they target both the inflammatory process and pain itself. They are used to treat all types of inflammatory pain including acute and chronic pain. Although NSAIDs are very effective agents, they remain a serious source of adverse effects limiting applicability in numerous clinical situations. Despite a large number of therapeutic agents, many types of pain remain weakly sensitive to known analgesics. Therefore, development of new analgesic agents with new modes of action is an important challenge.
Ionotropic purinergic receptors (P2X) are ligand-gated ion channels, which are activated by their natural agonist adenosine triphosphate (ATP) applied extracellularly. These receptors are found in various organs and tissues, and they have a specific physiological function in the nervous system [Surprenant A., North R. A. Signaling at purinergic P2X receptors//Annu. Rev. Physiol., 2009, Vol. 71, p. 333-359]. P2X are expressed in sensory neurons, and ATP released from damaged and inflamed tissues, activates the receptors and initiates pain signals. It is assumed that purinergic signaling plays an important role in pain conditions related to injuries, tumors, inflammation, migraine and respiratory diseases. Humans have seven known isoforms of P2X receptors among which isoforms P2X2, P2X3, P2X4 and P2X7 are assumed to participate in pain perception [Donnelly-Roberts D. et al. Painful purinergic receptors//J. Pharmacol. Exp. Ther., 2008, Vol. 324, p. 409-415]. Among the seven isoforms of purinergic receptors, P2X3 is acknowledged to be an important and well-known "participant" of pain conditions [Wirkner K. et al. P2X3 receptor involvement in pain states//Mol. Neurobiol., 2007, Vol. 36, p. 165-183].
Selective modulators of purinergic receptor function, which are able to modify the activity of only particular isoforms, are key to drug development for the treatment of diseases, in which these receptors are involved. They are also necessary for the investigation of purinergic receptor functions. In case of P2X3 receptors, antagonists (inhibitors) have the greatest pharmacological potential, as it is exactly the decrease of receptor activity that is required for the therapy of several pain syndromes.
Nowadays, numerous low-molecular-mass antagonists of P2X3 receptors are known, for example: 2′,3′-O-(2,4,6-trinitrophenyl)-ATP [Virginio C. et al. Trinitrophenyl-substituted nucleotides are potent antagonists selective for P2X1, P2X3, and heteromeric P2X2/3 receptors//Mol. Pharmacol., 1998, Vol. 53, p. 969-973], other derivates of mono- and dinucleotides and [Ford K. K. et al. The P2X3 antagonist P1, P5-di[inosine-5′] pentaphosphate binds to the desensitized state of the receptor in rat dorsal root ganglion neurons//J. Pharmacol. Exp. Ther., 2005, Vol. 315, p. 405-413; U.S. Pat. No. 6,881,725], suramin analogues [Hausmann R. et al. The suramin analog 4,4′,4″,4′″-(carbonylbis(imino-5,1,3-benzenetriylbis (carbonylimino)))tetra-kis-benzenesulfonic acid (NF110) potently blocks P2X3 receptors: subtype selectivity is determined by location of sulfonic acid groups//Mol. Pharmacol., 2006, Vol. 69, p. 2058-2067], A-317491 [Jarvis M. F. et al. A-317491, a novel potent and selective non-nucleotide antagonist of P2X3 and P2X2/3 receptors, reduces chronic inflammatory and neuropathic pain in the rat//Proc. Natl. Acad. Sci. U.S.A., 2002, Vol. 99, p. 17179-17184], diaminopyrimidine derivatives [Carter D. S. et al. Identification and SAR of novel diaminopyrimidines. Part 1: The discovery of RO-4, a dual P2X3/P2X2/3 antagonist for the treatment of pain//Bioorg. Med. Chem. Lett. 2009, Vol. 19, p. 1628-1631; Jahangir A. et al. Identification and SAR of novel diaminopyrimidines. Part 2: The discovery of RO-51, a potent and selective, dual P2X3/P2X2/3 antagonist for the treatment of pain//Bioorg. Med. Chem. Lett., 2009, Vol. 19, p. 1632-1635; U.S. Pat. Nos. 7,589,090; 7,531,547], tetrazole and arylamide derivatives [U.S. Pat. No. 7,595,405], as well as piperazine and phenyl thienopyrazole derivatives [Brotherton-Pleiss C. E. Discovery and optimization of RO-85, a novel drug-like, potent, and selective P2X3 receptor antagonist//Bioorg. Med. Chem. Lett., 2010, Vol. 20, p. 1031-1036; U.S. Pat. No. 7,491,821].
Among inhibitors of P2X3 receptors, substances of protein nature are known: spinorphin, a fragment of hemoglobin β-chain affecting also other targets [Jung K. Y. et al. Structure-activity relationship studies of spinorphin as a potent and selective human P2X3 receptor antagonist//J. Med. Chem., 2007, Vol. 50, p. 4543-4547], and two components of the spider Alopecosa marikovskyi venom, namely, purotoxin-1 (PT1) [Grishin E. V. et al. Novel peptide from spider venom inhibits P2X3 receptors and inflammatory pain//Ann. Neurol., 2010, Vol. 67, p. 680-683; RU2422459] and purotoxin-2 (PT2) [Kabanova N. V. et al. Modulation of P2X3 receptors by spider toxins//Biochim. Biophys. Acta, 2012, Vol. 1818, p. 2868-2875]. PT1 is the closest analogue of the declared compounds. This peptide consists of 35 amino acid residues and inhibits selectively the activity of P2X3 receptors due to stabilization of their desensitized state. Recombinant PT1 can be produced in a bacterial expression system [Grishin E. V. et al. Novel peptide from spider venom inhibits P2X3 receptors and inflammatory pain//Ann. Neurol., 2010, Vol. 67, p. 680-683; RU2422459; RU257194].
Despite rather numerous known compounds, which can inhibit P2X3 receptors, no drug has currently been approved for the use in clinical practice acting as a P2X3 modulator. Meanwhile, the search for new drugs relieving pain of any origin effectively and safely is a pressing challenge for modern medicine. The development and implementation of effective and selective modulators of P2X3 receptors can be one of the approaches for solving the task.

Peptide modulator of purinergic receptors

Abstract: Gly1-Tyr2-Cys3-Ala4-Thr5-Lys6-Gly7-Ile8-Lys9-Cys10- Asn11-Asp12-Ile13-His14-Cys15-Cys16-Ser17-Gly18-Leu19- Lys20-Cys21-Asp22-Ser23-Lys24-Arg25-Lys26-Val27-Cys28- Val29-Lys30-Gly31,                or a sequence with at least 90% homology hereto.        Peptides in the invention can be used for prevention and treatment of diseases mediated by purinergic receptors. The peptides can be used for development of new drugs on their basis, for example, analgesics, as well for investigation of mechanisms of pain occurrence, for identification and testing of new modulators of P2X3 receptors. The peptides in the invention can be produced using chemical synthesis or biotechnologically using the nucleotide sequence of the corresponding gene.


My invention attaches to trucks with snowplows. When the truck owner takes the snowplow off of the vehicle, my brush guard clips on to the truck side push plates remaining on the truck after the snowplow has been removed. To use the snowplow again, pull the pins on the brush guard slide it off and drive up to the snowplow and reattach snowplow without any tools required.

The Brush guard is designed to fit any vehicle with a snow plow, whether it is prior to quick-mount systems, meaning the old style, wherein the plow frame stays on the truck or today's style where the plow frame comes off the truck with the plow and what you are left with on your truck is two push plates or brackets to receive the plow and frame. These brackets are very hard to remove and are made to stay on your truck even in warm weather. This makes for some unsightly pieces of metal protruding from your truck in a world where appearance is everything. I designed the brush guard to improve the appearance of the metal brackets and protect the grill and headlights of the vehicle.
Some notable features of the brush guard are steel tubing that make up cross pieces with one quarter inch steel side plates. The total width of the brush guard will vary depending on what make and model of snowplow and the height will be determined by the vehicle. The receiver part of the brush guard (the bottom of the brush guard that clips onto the snow plow brackets) clips on the truck using two spring loaded connecting pins. When the brush guard is put into place you turn the pins and the brush guard is now mounted on your vehicle. There are two thumb screws, one on each side on the bottom of the brush guard receiver. These screws are to be tightened by hand to minimize movement of the brush guard once mounted on the vehicle. The clip-on brush guard will also come with pre-drilled holes for headlight guards and fog lights. Color selection will be determined by the vehicle.

Abstract: This process consists of two easy steps. Slide the brush guard onto the snowplow push plates until the holes line up. Twist and pull the spring loaded pins to (1) engage pins. To remove brush guard pull and twist pins ¼ turn until retaining key holds (10) pins open and slide brush guard off.


An attachment for an engineering vehicle that has a first side having an outer surface, an inner surface, and a first plurality of surfaces extending between the outer surface and the inner surface defining a first plurality of holes having a hole diameter; a second side having an outer surface, an inner surface, and a second plurality of surfaces extending between the outer surface and the inner surface defining a second plurality of holes having the hole diameter; and a plurality of rods occupying at least some of the first plurality of holes and at least some of the second plurality of holes, each rod having a first end, a second end, a longitudinal axis intersecting the first end and the second end, a rod length between the first end and the second end along the longitudinal axis, and a rod diameter.

1. Field of the Invention
This invention relates generally to material handling. More specifically, this invention is an attachment for an engineering vehicle that facilitates the removal of rocks and other undesirable material during preparation of land for a use.
2. Description of the Related Art
Engineering vehicles such as skid steers and tractors are commonly used for a variety of useful purposes such as farming, construction, and landscaping. They are typically fitted with mechanisms to allow a variety of different useful attachments for different purposes, such as an auger, a trencher, or a snow plow. These attachments are connected to the vehicle via a mounting system, which may be universal or, alternatively, specific to a particular brand of vehicle.
One common attachment for such vehicles is known as a rock rake, which is generally used for removing rock from top soil in an area. A simple rock rake attachment looks like a large hand rake connectable to the vehicle. U.S. Pat. No. 6,990,758, for example, teaches an attachment mountable to a bucket of an excavator, thus avoiding the work and expense of removing the bucket from the arm. The scraper portion and a rake are included in a single unit that is attachable and detachable from the excavator bucket. Scraper and blade attachments are either detachably connected to the unit with bolts or permanently welded in place as desired. See also U.S. Pat. No. D361,772.
Other types of rock rakes include a bucket for scooping and retaining material. U.S. Pat. No. 6,718,662, for example, teaches an attachment that comprises a plurality of teeth supported in a frame that attaches to the bucket of a front end loader.
U.S. Pat. No. 8,534,371 teaches an attachment for picking rocks and sorting them with a rotatable drum. The operator moves the drum across the surface as desired to direct rocks or other objects into the drum. When the operator elevates the drum, soil passes out of the drum through openings while rocks are retained. Drum rotation facilitates separation of the rocks from the material.
U.S. Pat. No. 7,066,275 teaches a bucket that includes a frame mounted on the outer end thereof that supports removable and replaceable grates. Tines extend from the outer transverse edge of the frame supporting the grates and are adapted to collect and dig under rocks, which are forced up the tines and onto the grate by the normal forward movement of the vehicle. Periodically, when the grates become full of rock, the operator pivots the implement, thereby dumping the rocks into the bucket. The bucket includes a perforated grated floor through which additional dirt may be removed from the rocks and dropped back onto the soil while the rocks remain in the bucket.
Each of the above-referenced patents is incorporated by reference herein.

Rock rake attachment for engineering vehicle


Described herein is a stacked package according to the present invention, wherein a plurality of tape carriers which seal semiconductor chips, are multilayered in upward and downward directions. In the stacked package, one ends of leads formed over the whole surfaces of each tape carrier are electrically connected to their corresponding connecting terminals of the semiconductor chip. Other ends of the leads are electrically connected to their corresponding through holes defined in the tape carrier. Connecting terminals common to the plurality of semiconductor chips are formed at the same places of the plurality of tape carriers and withdrawn to the same external connecting terminals through a plurality of mutually-penetrated through holes.

The present invention relates to a semiconductor device wherein a plurality of types of semiconductor chips are held in a single package from an MCM (Multi Chip Module)-based approach so that signals can be inputted thereto and outputted therefrom with respect to each other, and particularly to a technique effective for application to a semiconductor device wherein a microcomputer including a CPU (Central Processing Unit), a programmable non-volatile memory such as a flash memory or the like, a DRAM (Dynamic Random Access Memory), and a logic LSI such as an ASIC (Application Specific Integrated Circuit) or the like are brought into one package.
The present inventors have discussed a technique wherein in a semiconductor device about a system on-chip, a plurality of types of semiconductor chips are accommodated or held in a single package so as to be able to input signals thereto and output the same therefrom with respect to each other from an MCM-based approach without bringing all of a microcomputer, a flash memory, a DRAM, an ASIC, etc. into one chip upon implementation of an approach to a DRMA/SIMM (Single In-line memory Module) having the high needs of users and a flash memory/DRAM-based microcomputer on-chip. The following is the corresponding technique discussed by the present inventors. Its summary is as follows:
A move attempt to form a microcomputer, a flash memory, a DRAM, an ASIC, etc. on one chip thereby to achieve the speeding up of a data transfer rate, space saving (improvements in packing density), low power consumption, etc. has recently been made active in front end technology such as a multimedia, information communications, etc. However, the formation of such many kinds of LSIs on one chip will cause an extreme increase in the load on a semiconductor manufacturing process.
This reason will be described below based on a process for placing or forming the microcomputer, flash memory, DRAM and ASIC in mixed form, which has been discussed by the present inventors. A summary of the mixed-loading process is as follows:
A p-type impurity (boron) is ion-implanted in a principal surface of a semiconductor substrate 100 to form a p well 101 as shown in FIG. 78. Thereafter, a field oxide film 102 is formed over the surface of the p well 101 by a LOCOS method. An element or device formed at the left end in the drawing is a MOSFET which constitutes each memory cell of a DRAM, devices formed at a position adjacent to the right side are a MOSFET which constitutes each memory cell of a flash memory and a MOSFET for a high voltage, which constitutes part of a peripheral circuit of the flash memory. A device formed at the right end is a MOSFET which constitutes a logic LSI such as a microcomputer, an ASIC or the like. Incidentally, an actual LSI is comprised principally of an n channel MOSFET and a p channel MOSFET. However, only a region for forming the n channel MOSFET will be illustrated to simplify its description.
Next, a tunnel oxide film 103 for the flash memory is formed as shown in FIG. 79. The thickness of the tunnel oxide film 103 is set so as to range from about 8 nm to 13 nm.
Next, as shown in FIG. 80, a polycrystal silicon film deposited on the semiconductor substrate 100 by CVD is subjected to patterning to form a floating gate 104 (part thereof) for the flash memory. Thereafter, a silicon oxide film, a silicon nitride film and a silicon oxide film are layered over the floating gate 104 as shown in FIG. 81 thereby to form a second insulating film (ONO film) 105 whose thickness ranges from about 10 nm to 30 nm.
Next, a gate oxide film 106 for the MOSFET which withstands a high voltage, is formed in a peripheral circuit region of the flash memory as shown in FIG. 82. The gate oxide film 106 is formed to a thickness (which ranges from 10 nm to 30 nm) thicker than the thicknesses of gate oxide films for other MOSFETs.
Next, a gate oxide film 107 for the MOSFET which constitutes the logic LSI, and a gate oxide film 130 for the MOSFET which constitutes each memory cell for DRAM, are formed as shown in FIG. 83. The thickness of the gate oxide film 107 is set so as to range from about 4 nm to 10 nm, whereas the thickness of the gate oxide film 130 is set so as to range from about 8 nm to 15 nm.
Next, as shown in FIG. 84, the polycrystal silicon film deposited over the semiconductor substrate 100 by CVD is subjected to patterning thereby to simultaneously form gate electrodes (word lines) for each individual memory cells of the DRAM, a control gate 109 for the flash memory, a gate electrode 110 for the high-withstand MOSFET, a gate electrode 111 for the MOSFET which constitutes the logic LSI. Thereafter, the (partly-formed) floating gate 104 for the flash memory is subjected to patterning to form a floating gate 104 as shown in FIG. 85.
Next, n-type impurities (phosphorus and arsenic) are ion-implanted in part of a memory cell region of the flash memory as shown in FIG. 86 to form an n+-type semiconductor region 112 for the flash memory. Thereafter, the n-type impurities (phosphorus and arsenic) are ion-implanted in part of the memory cell region of the flash memory, the peripheral circuit region thereof and a logic LSI forming region as shown in FIG. 87 thereby to simultaneously form nxe2x88x92-type semiconductor regions 113 and 113 for the flash memory, nxe2x88x92-type semiconductor regions 113 and 113 for the high-withstand MOSFET, and nxe2x88x92-type semiconductor regions 113 and 113 for the MOSFET which constitutes the logic LSI.
Next, as shown in FIG. 88, side wall spacers 114 are respectively formed over the side walls of the gate electrodes (word lines) 108 for each individual memory cells of DRAM, the control gate 109 for the flash memory, the gate electrode 110 for the MOSFET for a high voltage, and the gate electrode 111 for the MOSFET which constitutes the logic LSI.
Next, the n-type impurities (phosphorus and arsenic) are ion-implanted in part of the memory cell region of the flash memory, the peripheral circuit region and the logic LSI forming region as shown in FIG. 89 to simultaneously form an n+-type semiconductor region 115 for the flash memory, n+-type semiconductor regions 115 and 115 for the high-withstand MOSFET, and n+-type semiconductor regions 115 and 115 for the MOSFET which constitutes the logic LSI, whereby one of a source region and a drain region for the flash memory, a source region and a drain region for the high-withstand MOSFET, and a source region and a drain region for the MOSFET constituting the logic LSI are brought to an LDD (Lightly Doped Drain) structure.
Next, as shown in FIG. 90, a silicon oxide film 116 deposited over the semiconductor substrate 100 by CVD is etched to define connecting holes on both sides of the gate electrodes (word lines) of the DRAM and define a connecting hole in an upper portion of the n+-type semiconductor region 112 for the flash memory. Thereafter, plugs 117 each composed of a polycrystal silicon film are formed inside these connecting holes. On both sides of the gate electrodes of the DRAM, n-type semiconductor regions 118 are formed by impurities diffused from the polycrystal silicon film. Thereafter, the polycrystal silicon film deposited over the silicon oxide film 116 by CVD is subjected to patterning to form each bit line BL for the DRAM and each bit line BL for the flash memory.
Next, a silicon oxide film 119 is deposited over the semiconductor substrate 100 by CVD as shown in FIG. 91. Thereafter, a polycrystal silicon film deposited over the silicon oxide film 119 is subjected to patterning to form lower electrodes 120 of capacitors for the DRAM.
A tantalum oxide film (or nitride silicon film) and the polycrystal silicon film deposited over the semiconductor substrate 100 are patterned to form an capacitive insulating film 121 and an upper electrode 122 of each capacitor for the DRAM as shown in FIG. 92. Thereafter, a silicon oxide film 123 is deposited over the semiconductor substrate 100 by CVD as shown in FIG. 93. An A1 film deposited over the silicon oxide film 123 is subjected to patterning to form metal wires or interconnections 124 as a first layer. Afterwards, a silicon oxide film 125 is deposited over the semiconductor substrate 100 by CVD as shown in FIG. 94. Thereafter, an A1 film deposited over the silicon oxide film 125 is subjected to patterning to form metal interconnections 126 as a second layer.
The above description is the summary of the process for forming the microcomputer, flash memory, DRAM and ASIC in mixed form.
According to the discussions of the present inventors, the above-described process has the following problems.
(1) The attainment of the speeding up of a logic unit needs to shorten a gate length of each MOSFET and thin the thickness of a gate oxide film. On the other hand, it is necessary to make the thickness of a gate oxide film of each MOSFET for a DRAM thicker than that of a gate oxide film of each MOSFET for the logic unit to some extent in consideration of a withstand voltage or high voltage. Further, a gate oxide film of each high-withstand MOSFET for a flash memory to which a high voltage is applied, needs to have a thicker thickness in order to ensure a sufficient withstand voltage. That is, when the DRAM, logic and flash memory are placed in mixed form, it is necessary to provide gate oxide films having thicknesses which vary according to required power levels. Therefore, the number of process steps and the number of masks increase by a large amount.
(2) When a DRAM is comprised of one transistor+one capacitor, a high-temperature heat treatment (corresponding to heat treatment for stabilizing the tantalum oxide film or high-temperature nitriding treatment) is taken upon formation of the capacitor. It is therefore necessary to set the gate length at the logic unit longer more or less. However, when the gate length at the logic unit is made longer, the speeding up of the logic unit will fall a sacrifice.
(3) Since the height of the DRAM on the semiconductor chip is higher than the logic unit and there is a step-like offset between the two, this exerts a bad influence on wiring formation. This tendency becomes pronounced in the case of a DRAM which adopts a stacked capacitor (Stacked Capacitor) structure in particular.
Thus, when one attempts to achieve one chip while the respective performance of the DRAM, logic, and flash memory are being maintained together, the number of process steps and the number of masks greatly increase. Alternatively, a mixed-loading process suitable for the achievement of one chip must be developed again. Even in either case, the manufacturing cost greatly increases.
There is also a strong demand for the loading of both a flash memory and a DRAM into a microcomputer system including a CPU even from a circuital standpoint based on a functional block configuration in addition to the above-described manufacturing process-based cost analysis. When the packageability to a built-in apparatus is taken into consideration, the integration of the two types of semiconductor chips comprised of the flash memory and DRAM into one package is indispensable. Therefore, the present inventors have thought that a decrease in the number of external connecting terminals and a reduction in the packing area due to the integration of a plurality of types of semiconductor chips into one package could be achieved by assigning signals used in common to the mutual semiconductor chips to common external connecting terminals respectively, and the costdown to the microcomputer system could be achieved even from the circuital standpoint.
An object of the present invention is to provide a semiconductor device wherein in a package structure of a type wherein two types of semiconductor chips corresponding to a CPU and a flash memory, and a DRAM are integrated or combined into one package, a decrease in the number of external connecting terminals and a reduction in the packing area due to the integration of the two types of semiconductor chips into one package can be achieved even from a circuital standpoint based on a functional block configuration, and the costdown to a microcomputer system can be achieved.
Another object of the present invention is to provide a semiconductor device wherein when a DRAM is set as a synchronous DRAM where a logic circuit such as an ASIC or the like is incorporated into respective semiconductor chips, external connecting terminals can be further made common, thereby making it possible to provide a much further reduction in the number of external connecting terminals and achieve the costdown thereto.
A further object of the present invention is to provide the above-described semiconductor device at low cost.
When two types of semiconductor chips corresponding to a so-called flash memory-equipped microcomputer, which is equipped with a CPU and a flash memory, for example, and a semiconductor chip referred to as so-called DRAM on-chip logic, which is equipped with a DRAM and a logic circuit such as an ASIC or the like are considered in the above-described microcomputer system, it is essential that countermeasures against the operation between the flash memory-equipped microcomputer and the DRAM on-chip logic should be taken. In other words, it is necessary to take countermeasures against data transfer rates with respect to an access operation to the DRAM of the DRAM on-chip logic from the flash memory-equipped microcomputer and an access operation to the DRAM from the logic circuit inside the DRAM on-chip logic.
When it is desired to connect between the semiconductor chips respectively corresponding to the aforementioned flash memory-equipped microcomputer and DRAM on-chip logic at high speed, for example, they can be connected to each other at high speed by using an interface directly coupled to the DRAM. However, if the logic circuit of the DRAM on-chip logic desires to access the DRAM, then there is known, as a first method, a method of sending a wait signal back to the CPU when the logic circuit is in operation. Since the present method must use an asynchronous memory as a memory to be handled between the flash memory-equipped microcomputer and the DRAM on-chip logic, the transfer of data in one clock cycle cannot be performed, i.e., the transfer of data in two-clock cycle is performed because the time required to read or recognize the wait signal cannot be taken or spent.
As a second method capable of implementing one clock cycle, may be mentioned a method of allowing the flash memory-equipped microcomputer to perform bus arbitration in the on-chip logic itself. According to this method, since the logic circuit of the DRAM on-chip logic outputs a request signal for making a request to the CPU for a bus release and the CPU cannot do anything during a period in which a bus is set free to the logic circuit, the present method will cause a malfunction or inconvenience that overheads of the arbitration increase and the CPU itself cannot perform time-based control.
Therefore, the present inventors have focused attention on the fact that the time may preferably be controlled by the CPU itself of the flash memory-equipped microcomputer. The present inventors thought from such attention that a self-refresh period of the DRAM as viewed from the flash memory-equipped microcomputer was effectively used to thereby allow a self-refresh operation of the DRAM, and an access operation to the DRAM from the logic circuit lying inside the DRMA on-chip logic was made possible during this self-refresh period, whereby the transfer of data between the flash memory-equipped microcomputer and the DRAM on-chip logic could be achieved at high speed.
One object of the present invention is to provide a semiconductor device wherein in semiconductor chips each equipped with a DRAM and a logic circuit such as an ASIC or the like, the need for wait control is eliminated and a self-refresh period of the DRAM as viewed from the outside is effectively used to thereby allow an access operation to the DRAM from the logic circuit during this self-refresh period, whereby the speeding up of the transfer of data between the outside and each semiconductor chip can be implemented.
The present invention also provides a semiconductor device wherein even in the case of a package structure in which two types of chips corresponding to a semiconductor chip equipped with a DRAM and a logic circuit and a semiconductor chip equipped with a CPU and a flash memory are combined into one package, wait control is made unnecessary and an access operation to the DRAM from the logic circuit is made possible during a self-refresh period of the DRAM as viewed from the CPU, whereby the speeding up of the transfer of data between the semiconductor chips can be implemented.
Further, the present invention provides a semiconductor device capable of facilitating the creation of programs since wait control used to perform wait-signal exchanges becomes unnecessary and timing itself provided for processing can be controlled from a CPU.
Moreover, the present invention provides a semiconductor device wherein the use of a general-purpose DRAM interface makes it possible to directly connect a semiconductor chip equipped with a DRAM and a logic circuit and a semiconductor chip equipped with a CPU and a flash memory to one another so that they are operable at high speed.
The above and other objects of the present invention and novel features thereof will become apparent from the following description of the present specification and the accompanying drawings.
Summaries of typical ones of the inventions disclosed in the present application will be described in brief as follows:
That is, the present invention provides one semiconductor device comprising a stacked package in which a plurality of tape carriers which seal a plurality of semiconductor chips, are stacked on one another in upward and downward directions, and wherein connecting terminals shared between the plurality of semiconductor chips are drawn to the same external connecting terminals of the stacked package through conductive layers formed in the tape carriers.
The present invention provides another semiconductor device wherein one ends of leads formed over the whole surface of each tape carrier referred to above are respectively electrically connected to connecting terminals of each semiconductor chip referred to above, the other ends of the leads are respectively electrically connected to through holes defined in each tape carrier, and the connecting terminals common to the plurality of semiconductor chips are formed at the same positions of the plurality of tape carriers and withdrawn to the same external connecting terminals via a plurality of mutually-penetrated through holes.
The present invention provides a further semiconductor device wherein the external connecting terminals are solder bumps formed at one ends of the through holes of the tape carrier corresponding to the lowest layer.
The present invention provides a still further semiconductor device wherein the external connecting terminals are formed over the whole surface of the tape carrier corresponding to the lowest layer and one ends thereof are leads which protrude to the outside of the tape carrier.
The present invention provides a still further semiconductor device wherein the external connecting terminals include some used as conductive pins, which are inserted into the through holes and others used as conductive pins, which protrude to the outside of the tape carrier.
The present invention provides a still further semiconductor device wherein one ends of the leads formed over the whole surface of each tape carrier referred to above are electrically connected to the connecting terminals of each semiconductor chip referred to above and the other ends of the leads protrude to the outside of each tape carrier so as to form the external connecting terminals, and a plurality of leads withdrawn from the connecting terminals common to the plurality of semiconductor chips are superimposed on one another in the outside of each tape carrier to thereby form common external connecting terminals.
The present invention provides a still further semiconductor device wherein one ends of the leads formed over the whole surface of each tape carrier referred to above are electrically connected to the connecting terminals of each semiconductor chip referred to above and the other ends of the leads protrude to the outside of each tape carrier so as to form the external connecting terminals, and a plurality of leads withdrawn from the connecting terminals common to the plurality of semiconductor chips are joined onto common electrodes of a mounting substrate.
The above and other objects of the present invention and novel features thereof will become apparent from the following description of the present specification and the accompanying drawings.


A structure of seat with seat lifter having two lifter links pivotally connected between a seat cushion and an upwardly extending support element fixed on vehicle floor, which includes a horizontal bar element extended between the two lifter links to prevent forward slippage of a passenger on the seat cushion. A reinforcing element is provided between the two lifter links and an upwardly extending support element so as to reinforce the two links, while allowing for movement of the two lifter links with respect to the upwardly extending support element, via a connecting element. The reinforcing element may comprise two reinforcing brackets connected with the respective two lifter links and the upwardly extending support element via the connecting element, or may comprise a lower extension area formed in each of the lifter links, which is movably connected with the upwardly extending support element via the connecting element.

1. Field of the Invention
The present invention relates to a structure of vehicle seat with a lifter for causing vertical displacement of the seat, in which a linkage of the lifter is provided to at least a forward portion of a seat back of the seat. In particular, the invention is directed to a vehicle seat structure of this kind wherein a forward slippage preventive element is provided to the lifter linkage so as to prevent a passenger from slipping and being slid forwardly on the seat when a collision or the like occurs.
2. Description of Prior Art
In the case of an abrupt deceleration or stop of a vehicle, a passenger on a seat in the vehicle is naturally caused to displace forwardly under the influence of inertia. Such forward displacement of passenger is basically prevented by a seat belt which restrains the passenger to the seat. However, in such an emergency case as a collision, the stop of the vehicle is so abrupt that, in spite of the restraint by seat belt, the buttocks portion of the passenger is forcibly slipped or slid forwardly on a seat cushion of the seat and sunk into the upper elastic portion of the seat cushion, with a high likelihood that the lower body portion of the passenger will be damaged or injured. This is what is called "forward buttocks slippage phenomenon".
Hitherto, various attempts have been made to prevent such forward buttocks slippage phenomenon. For example, the Japanese Laid-Open Patent Publication No. 2002-46513 discloses a cross rod member provided in the seat cushion, the cross rod member extending transversely of the forward region of the seat cushion to thereby prevent forward slippage of the passenger's buttocks portion on the seat cushion. Namely, in the case of sudden collision, the passenger's buttocks portion, which is being slipped and sunk into the seat cushion, is quickly contacted with the cross rod member and thus prevented against further forward movement, thereby protecting the lower body portion of passenger.
Incidentally, among the vehicle seats, there has been known a vehicle seat having a seat lifter provided therein, as disclosed for example from the Japanese Laid-Open Patent Publication No. 2001-88589. According thereto, the seat lifter has a pair of links pivotally connected with the respective right and left lateral sides of the seat cushion, and operation of the seat lifter causes vertical movement of the forward end portion of seat cushion.
It may be possible to connect the aforementioned cross rod member taught in the Pub. No. 2002-46513 between the pair of links of the seat lifter associated with the Pub. No. 2001-88589 in order to prevent the above-stated forward buttocks slippage problem. However, in that case, when a sudden collision occurs and the passenger's buttocks portion is about to slip on the seat cushion as discussed above, it is more likely than not that a large load applied from the passenger's buttocks portion to the cross rod member will deform both of the two links of the seat lifter. Namely, both two links will be twisted in either the right or left directions or bent in a direction laterally of the seat cushion. Of course, to solve such problem, one can contemplate increasing the thickness of the links to resist such large load. But, it will require reinforcing the pivot points and peripheral elements associated with the links, which will result in an undesired complicated structure and increase of its size.


An exercise equipment includes a base, an operating device and a magnetic resistance device. The operating device is movably disposed on the base. The magnetic resistance device is connected to the operating device and the base, wherein the magnetic resistance device is for providing a magnetic resistances in accordance with an operation of the operating device.

Technical Field
The present invention relates to an exercise equipment.
Description of Related Art
Exercise equipment make raining day and limited ground no longer be problems of doing exercise. With the increase demand for exercise equipment, various types of exercise equipment for training different parts of user's body are provided.
In general, user should overcome the resistance generated from the exercise equipment for training the shape of body. However, the resistance device provides the resistance by rub two components. Therefore, the resistance device of the exercise equipment usually be broken easily.

PREVENTIVE MEDICAL HEALTH CARE CO., LTD.


Systems, methods, and devices for managing application communications are described herein. In some aspects, a wireless device is configured to execute a plurality of applications and to communicate with a communication network. The wireless device includes a processor configured to receive information from an application, via an application programming interface. The information is indicative of a transmit delay tolerance. The processor is further configured to receive, via the application programming interface, a packet from the application. The wireless device further includes a network driver configured to determine when to transmit the packet based on the received transmit delay tolerance.

1. Field
The present application relates generally to wireless communications, and more specifically to systems, methods, and devices for synchronizing application communications.
2. Background
Applications ("apps") or device applets are now available that operate to provide a wide range of add-on services and features to wireless devices. For example, it is now possible for wireless devices to download and launch device applets to perform value-added functions such as, shopping, searching, position location, driving navigation, and an array of other functions. Network and application providers generally offer these device applets to device users for additional fees. Thus, the use of device applets increases the functionality and usability of wireless devices and offers device users features and convenience not originally available on the devices themselves.
A wireless device interfaces with one or more communication networks using any of a plurality of radios. For example, the wireless device may include a variety of radios providing communications using cellular, Wi-Fi, Bluetooth or other types of radio access technologies. Accordingly, applications executing on the wireless device are provided with a default routing that determines the radio and associated radio channel the applications will use to communicate with the appropriate network.
There is an increased interest, however, in intelligently managing application communications. This is due, in part, to an increase in the number of multi-radio devices (e.g. 3G/Wi-Fi devices) and an increase in network traffic that may create capacity problems for operators, and power consumption problems for users. Thus, with respect to such capacity and power consumption problems, it may be desirable to delay communications during certain periods.
Accordingly, there is a need for efficient and cost effective mechanisms to provide communication management for applications on wireless devices. Specifically, there is a need for systems and methods of managing policies regarding delayed transmission of communications.

Systems and methods for synchronization of application communications


A latch of a card edge connector comprising: an elongated body, having a outside wall with an extending wall, wherein a trench is formed between the outside wall and the extending wall, and the extending wall has an opening and a pin; and a latching device, having a knot and a pinhole used for joining the opening and the pin of the extending wall respectively, and having at least a buckle and a chuck, the buckle is used for locking a circuit card when a side part of the circuit card is pressed down the buckle, then the chuck is used for driving the buckle moving and releasing the circuit card.

1. Field of the Invention
The present invention relates to a latch of a card edge connector, and more particularly to a latch of a card edge connector used for various interface cards, memory cards or expending cards.
2. Description of the Prior Art
A plurality of card edge connectors are widely used in common computers for inserting interface cards, memory cards or expending cards to increase new appliances or functions.
Conventional designations of card edge connectors include a standing or a sitting type for space consideration of computers such as notebook computers. A usage of the sitting type of the card edge connector is that a circuit card is inserted into a socket with an angle of 45 degrees then the circuit card is pressed down and locked by a latch of the card edge connector.
The latch of the sitting type of the conventional card edge connector is formed integrally and extended on two sides of the card edge connector. Two supporting arms are thus formed then two buckles are formed on distal ends of the two supporting. As a result, when a side part of a circuit card is inserted into a socket and another side part of the circuit card is pressed down, the circuit card is locked by the two buckles of the two supporting arms and positioned between the buckles and the card edge connector.
Although an object for locking a circuit card with the latch of the sitting type of the conventional card edge connector can be achieved, fatigues of the two supporting arms would easily occur then causing deformations after long time use, or breakdowns by error operating. Besides, locking effects for fixing a circuit card with buckles of distal ends of two supporting arms could be deficient, that is, the conventional card edge connectors could not lock circuit cards tightly and firmly.


There is provided an image processing device including an image input unit configured to input captured image data of a portion of parking stalls that are compartmented at least by a first side line extending in a first direction and a second side line extending in the first direction, an image processing unit configured to generate edge image data by performing an edge extraction process on the captured image data, and a parking determination unit configured to obtain an integrated value of edge pixels of the first direction portion corresponding to the parking stalls in each position of a second direction that is orthogonal to the first direction based on the edge image data, and then to determine whether or not vehicles are parked in the parking stalls based on the obtained integrated value of each position of the second direction.

The present technology relates to an image processing device, an image processing method, and a program, and particularly to an image processing device, and the like which enable a process of determining whether or not a vehicle is parked in a parking stall based on captured image data.
FIG. 20 shows an example of a captured image of a parking lot such as a service area or a parking area on an expressway. As shown in the drawing, a parking lot includes a plurality of parking lanes and passages disposed between the parking lanes. For such a parking lot, a technology of computing the degree of congestion of vehicles for each parking lane and thereby computing the degree of congestion of the entire parking lot has been considered.
In order to compute the degree of congestion of vehicles in parking lanes, it is necessary to detect parking of a vehicle in each parking stall. For example, a method of installing a physical sensor in each parking stall is considered. However, this method is not reasonable due to a large number of sensors to be installed.
A method for detecting parking of a vehicle in each parking stall using a technique of a background difference which is a general image process has been considered (for example, refer to Japanese Unexamined Patent Application Publication No. 10-049662). However, in a parking lot such as a service area or a parking area of an expressway, entries and exits of vehicles are frequently made at all times, and parking stalls located close to toilets or shops go unoccupied only for extremely short periods of time. For these reasons, it is difficult to detect vehicles using the method.

Image processing device, image processing method, and program


The present invention concerns polyester fabric that is employed in airbags. In particular, the polyester fabric has improved resistance to edge combing—the relative tendency of a fabric to pull apart under seam stress or similar action such as inflation of inflatable restraints. Further, the polyester fabric of the invention must have an edge comb resistance of greater than about 350 Newtons at room temperature (20° C.) and greater than 250 Newtons at 90° C. The polyester fabric of the invention has an acrylic polymer or copolymer finish, or a mixture of acrylic and non-acrylic polymers. The finish is applied from about 1 to about 4 wt. % nominal solids add-on of said fabric.

1) Field of the Invention
The present invention concerns polyester fabric that is employed in airbags. In particular, the polyester fabric has improved resistance to edge combing—the relative tendency of a fabric to pull apart under seam stress or similar action such as inflation of inflatable restraints. Further, the polyester fabric of the invention must have an edge comb resistance of greater than about 350 Newtons at room temperature (20° C.) and greater than 250 Newtons at 90° C. The polyester fabric of the invention has an acrylic polymer, copolymer, or polymer blend finish applied from about 1 to about 4 wt. % nominal solids add-on of said fabric.
2) Prior Art
Conventional air bags are produced by coating or laminating a plain weave fabric with an elastomer resin such as a synthetic rubber, for example chloroprene, chlorosulfonated olefin or silicone, to provide a base fabric with low air permeability, and cutting and sewing the base fabric into bags. The elastomer resin is applied to the surface of the base fabric in an amount of 90 to 120 g/m2, and the air bag produced is very heavy, hard and coarse in appearance. Furthermore, when it is folded into a compact module, it is hard to fold. If the base fabric is coated with silicone elastomer resin, the air bag is considerably more heat resistant and cold resistant than an air bag having a base fabric coated with chloroprene elastomer resin. Moreover, the amount of resin coated is only 40 to 60 g/m2, thus allowing a reduction in weight and an improvement in appearance and foldability.
U.S. Pat. Nos. 6,545,092, 6,348,543 and 6,468,929 to Parker discloses a coating to improve edge comb resistance. This coating is a cross-linked blend of polyalkyl/polyphenoxy siloxane with a copolymer of ethylene and methacrylate.
U.S. Pat. No. 3,705,645 to Konen discloses an acrylic polymer coating as a film laminate on the inside of the airbag.
U.S. Pat. No. 5,800,883 to Koseki discloses a polyurethane resin coated airbag.
Many others used silicone resin coatings that also created a film on top of the fibers thereby creating an air impermeable airbag. These airbags exhibit reduced seam combing. It is also known to use a silicone/urethane or silicone/acrylic copolymer coating to improve tear strength.
U.S. Pat. No. 6,169,043 to Li discloses an airbag coated with polyacrylate and polyurethane copolymer resin to reduce air permeability. No mention is made of seam or edge combing. This patent shows that polyacrylate by itself is inferior to polyacrylate and polyurethane copolymer resin with respect to air permeability.
U.S. Pat. No. 6,291,040 to Moriwaki et al discloses a nylon airbag fabric thinly coated with an thermoplastic synthetic resin, preferably a polyurethane or polyester based resin to prevent edge combing by bridging the interstices of the fabric with the resin.
However, as yet, such improvement is not regarded as sufficient. The coating must withstand extreme conditions in the folded state. For instance the coating must not crack or become sticky, and the airbag must deploy without seam combing (the relative tendency of a fabric to pull apart under stress, due to inflation, at the seams) after prolonged storage at −40° C., and at 90° C.
In addition, it is also demanded that the base fabric for air bags be less expensive and more easily folded for reducing the size of the module. Thus, air bags using non-coated base fabrics have attracted attention. However, they become frayed during sewing and exhibit seam combing.
Uncoated nylon fabrics for airbags have edge comb resistance that are superior to polyester fabric used for the same purpose. To make polyester airbags competitive with nylon airbags, it is desirable to increase the edge comb resistance of polyester fabrics used in airbags. There is therefore a need for an uncoated polyester air bag that exhibits equivalent or superior edge comb resistance at ambient and high temperatures.