An integrated processor and level two (L2) dynamic random access memory (DRAM) are fabricated on a single chip. As an extension of this basic structure, the invention also contemplates multiprocessor "node" chips in which multiple processors are integrated on a single chip with L2 cache. By integrating the processor and L2 DRAM cache on a single chip, high on-chip bandwidth, reduced latency and higher performance are achieved. A multiprocessor system can be realized in which a plurality of processors with integrated L2 DRAM cache are connected in a loosely coupled multiprocessor system. Alternatively, the single chip technology can be used to implement a plurality of processors integrated on a single chip with an L2 DRAM cache which may be either private or shared. This approach overcomes a number of issues which limit the performance and cost of a memory hierarchy. When the L2 DRAM cache is placed on the same chip as the processor, the time needed for two chip-to-chip crossings is eliminated. Since these crossings require off-chip drivers and receivers and must be synchronized with the system clock, the time involved is substantial. This means that with the integrated L2 DRAM cache, latency is reduced.

Field of the Invention
The present invention generally relates to memory hierarchical structures in microprocessor systems and, more particularly, to an integrated processor and level two (L2) dynamic random access memory (DRAM) on a single chip. As an extension of this basic structure, the invention also contemplates multiprocessor"node" chips in which multiple processors are integrated on a single chip with L2 cache.

International Business Machines Corporation


A waste water filter for use within a septic tank. The waste water filter comprises a shield including an upstanding peripheral wall, the peripheral wall defining a shield interior within the shield. The shield further includes an inlet opening for allowing the entry of unfiltered wastewater into the shield interior. A filter enclosure is disposed within the shield interior at a spaced apart distance from the shield. The filter enclosure includes an upstanding peripheral wall, a top end, and a bottom end. The bottom end includes a bottom panel for preventing the passage of unfiltered waste water into filter enclosure. The filter enclosure further includes at least one filter surface disposed intermediate the top and bottom ends of the filter enclosure for allowing the passage of water restricting the passage of solids. A filter support is disposed intermediate the top and bottom ends of the filter enclosure adjacent to the filter surface and provides a supporting reinforcement surface for the filter surface during the filtering of waste water to prevent the filter surface from collapsing inwardly away from the shield. The filter support includes at least one opening therein for the passage of filtered waste water into filter enclosure. An outlet is disposed within the filter enclosure for discharging filtered waste water. The filter surface is typically disposed in a substantially vertical orientation and the filter support is typically disposed inside of the filter surface within the filter enclosure.

In rural areas septic tanks in conjunction with drain fields are utilized to handle and treat residential wastewater. Septic tanks typically comprise a concrete or plastic container that receives incoming waste water or influent from the sewage drains of the residence it serves. The septic tank incorporates biologically active agents to aerobically and anaerobically digest the waste constituents of the influent that enters the tank. The digestion process causes waste particles or solids once digested to precipitate to the floor of the septic tank and form a sediment referred to as sludge. On the surface of the waste water within the tank a layer of scum forms that includes a high grease content which is unable to be dissolved into the waste water. Biological agents in the scum layer digest the waste particles in this layer which causes these particles to precipitate to the sludge layer at the bottom of the tank. A so called clear zone separates the scum layer and the sludge layer in the tank. The so called clear zone is relatively clear of suspended solid waste particles but includes particles precipitating to the bottom of the tank as the density of the particles undergoes changes during digestion. Sludge gasification further causes bubbles to form in the sludge layer which when rising to the surface also carry particles with them.
Traditionally, relatively clear waste water is discharged as effluent from the clear zone of the tank into piping that carries the effluent to a drain field or leach field. The drain field typically comprises a highly porous bed of gravel, sand or other coarse and fine aggregates. The drain field is usually disposed underground below the level of the septic tank but at a depth above the groundwater level. The drain field is efficient in allowing the wastewater to leach or percolate into the ground and eventually into the groundwater. Water leaching through the porous drain field is further filtered of solids by the gravel and sand of the drain field. Additional aerobic and anaerobic digestion of solids occurs in the drain field. By the time the wastewater has reached the groundwater supply it has been treated by the digestion process within the septic tank and from the filtering effect of the drain field.
The quality of wastewater that is permitted to enter the groundwater supply is stringently regulated in some areas to minimize the negative environmental effects that are associated with poorly treated wastewater entering the groundwater supply. These regulations have necessitated improvements to the traditional septic tank and drain field residential waste water handling system. Furthermore, as solid waste particles are discharged unintentionally from the septic tank to the drain field, the porous structure of the drain field has a tendency to become clogged with these solids thus diminishing the drainage capabilities of the drain field. Improvements have been incorporated into the traditional septic tank and drain field designs to minimize the amount of solids that are discharged into a drain field to thus insure a maximum drainage efficiency.
The two goals of maximum drain field drainage efficiency and minimum environmental impact have been best achieved in the past by the incorporation of a filter device placed in the septic tank to filter effluent leaving the tank. This filter, once utilized, insures that a minimum of untreated solid waste particles are discharged from the tank into the drain field. Additionally, maximum drain field drainage efficiency has been further advanced by the use of an incremental discharge apparatus such as a dosing siphon or pump to discharge the effluent from the tank to the drain fields. The use of an incremental discharge apparatus further necessitated the use of a filter to minimize the clogging effects of solids on the devices. Incremental discharge apparatus provide the benefit of discharging a large volume of water from the tank at spaced time increments. This type of discharge has a cleansing effect on solids accumulating within piping and within the drain field, as well.
These previous attempts at filtering the effluent that is discharged from a septic tank into a drain field have been successful in limiting the amount of untreated solid waste particles exiting the septic tank. Nevertheless, previous effluent filters had inherent inefficiencies due to their construction. Previous effluent filters are often of a design that utilizes a single filtering surface that is constructed into an enclosure and then mounted within a housing or shield. This filter design typically further incorporates a pump or other discharge apparatus that is maintained within the interior of the filter to permit the incremental discharge of filtered waste water to the drain field.
A first deficiency of the previously mentioned existing filter design is the tendency of the filter enclosure to collapse during the filtering process. The pump or dosing siphon acts to discharge the filtered water within the filter enclosure through an outlet where the water will eventually proceed to a sand filter or a drain field. The operation of the pump or dosing siphon results in suction forces, which pull inwardly on the filter enclosure. Additionally, water pressure outside the filter enclosure pushing inward on the filter enclosure also causes the filter enclosure to collapse.
Existing filters have experienced collapsing within the filter enclosures of the filters due to a design that increases the forces causing collapse, while offering little in the way of filter enclosure reinforcement.
Specifically, existing designs use relatively small inlets within the filter housing that result in high water speeds entering the housing which increases the forces pushing on the filter enclosure encouraging collapse of the enclosure. In addition to these undesirable added forces, the water entering the housing is also entering at a speed which is sufficient to pull solids into the housing, causing a build up of solids on the filter surfaces of the filter enclosure. The build up of solids on the filter surfaces limits the rate of the entry of water into the filter enclosure, which promotes collapse of the filter enclosure. The build up of solids may also contribute to collapse by providing a contact surface which water entering the filter housing interior will contact before preceding to the remaining openings within the filter surface.
The collapse or partial collapse of the filter enclosure can result in major operational problems for the filter, as well as in smaller operational inefficiencies that effect overall septic system performance. The most significant effect that collapse can cause is the entry of undigested solids from within the septic tank into the filter enclosure where the solids can plug and ruin the pump. Should the solids be discharged through the outlet by a pump or dosing siphon, the solids could plug outlet lines, sand filter distribution lines, the sand filter bed, or the drain field. Excess accumulation of solids within any of these septic system elements may cause the necessity of expensive repairs. Also possible is the discharge of undigested biological waste material that poses a health hazard to drinking water or to other ground water sources.
A second deficiency of the previous filter design is the lack of self cleaning properties. Solid waste particles that enter the housing are subject to digestion but are unlikely to be removed from the housing due to the absence of an outlet for solids that are drawn into the housing. The accumulation of solid waste particles will cause the inefficient operation of the filter, and eventually will cause the entire filter to plug which can ruin the pump if the problem is not detected immediately. This accumulation is also problematic during routine maintenance of the filter. A filter with a large amount of solids accumulation can plug drainage check valves which prevents the drainage of water from the filter during removal of the filter from the septic tank. The filter in this situation is extremely heavy and very difficult to remove from the septic tank for inspection. Accumulated solids, of course, add further weight to the filter.
A third deficiency in the previous waste water filter design has been the inability to back flush the filter. This feature is a necessity considering the inherent tendency of the previous filter designs to clog with solid particles quite easily. The inability to back flush the filter in a simple manner also results in expensive labor costs to the septic tank owner when the filter eventually plugs.
In lieu of the deficiencies of previous effluent filter designs there is clearly a need for a filter that: includes a filter enclosure that will not collapse under any circumstance, minimizes the clogging effects of accumulating solid waste particles on the filter surface by providing self cleaning characteristics to the filter which minimizes costly maintenance, and can be easily back flushed.


A solution of hydrogen peroxide H.sub.2 O.sub.2 !, citric acid HOC(CH.sub.2 COOH).sub.2 COOH.H.sub.2 O!, and a salt of citric acid such as potassium citrate HOC(CH.sub.2 COOK).sub.2 COOK.H.sub.2 O!, and hydrogen peroxide H.sub.2 O.sub.2 !, in a proper pH range, selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. As an illustration, Al.sub.y Ga.sub.1-y As is selectively etched in the presence of Al.sub.x Ga.sub.1-x As (0.ltoreq.y<0.2 & x>0.2) when the pH range of the etchant solution is between approximately 3 and 6. The etchant solution described herein may be utilized in the fabrication of, for example, high-frequency transistors exhibiting improved saturated current (I.sub.dss) and threshold voltage (V.sub.th) uniformity.

Selective etching has been considered for use as a technique in the manufacture of various semiconductor devices such as field-effect transistors (FET's). This technique involves incorporating an "etch stop" layer into the device in order to prevent unintended etching of underlying structures. Such unintended etching leads to variations in the thickness in the active layers of FET's, which in turn results in undesired conductance variations of FET active channel regions. As an example, variation in the uniformity of the etched active layers associated with the MESFET devices on a single wafer has limited production of MESFET-based integrated circuits formed on layered semiconductor structures grown using molecular beam epitaxy (MBE) processing techniques.
A number of methods have been developed for improving the uniformity of devices realized upon MBE-grown semiconductor structures. Included among these methods are selective "dry" (e.g., plasma) etching, selective "wet" etching using chemical solutions, as well as nonselective spray gate recess etching. Selective etch stop systems have so far proven the most effective in enhancing device uniformity. One figure of merit used to characterize selective etching techniques is known as "etch selectivity", which is defined as the ratio of the etch rate of the semiconductor layer overlying the etch stop layer to the etch rate of the etch stop layer. Although dry etchants enable high etch selectivity, dry etchants tend to increase the risk of damage to semiconductor devices relative to wet etchants. On the other hand, the lower etch selectivity of wet etchants has often required the utilization of relatively thick etch stop layers to prevent inadvertent etching of underlying portions of the device. Unfortunately, such thick etch stop layers often degrade device performance relative to otherwise identical devices fabricated in the absence of an etch stop layer. For example, the performance of GaAs-based MESFET devices realized using AlGaAs etch stop layers of the requisite thickness has tended to degrade due to the resultant increased source access resistance.

Method of fabricating Group III-V compound semiconductor devices using selective etching


A combustion chamber in a melter gasifier extends into a fluidized bed to isolate fine particulate ore introduced into the chamber from the remaining internal portion of the melter gasifier. The fine particulate ore is melted in the chamber and falls on the bed to be reduced as it trickles down to the molten metal in the melter gasifler bottom. Reducing gases withdrawn from the melter gasifier are filtered through the bed, thereby preventing the fine particulate ore from being withdrawn with the gases. The chamber can be liquid cooled and use a burner to provide combustion temperatures.

The invention relates to a method of producing molten metal, in particular pig iron or steel pre-products, from at least partially fine-particulate metal carriers, in particular partially reduced or reduced sponge iron, in a melter gasifier. Carbon-containing material and oxygen or an oxygen-containing gas are supplied to the melter gasifier with simultaneous formation of a reducing gas in a bed formed of solid carbon carriers. The metal carriers are melted, optionally upon previous complete reduction. The present invention also relates to a melter gasifier for carrying out the method.
From EP-B-0 010 627 it is known to feed particulate iron-containing material, such as pre-reduced sponge iron, through a centrally arranged charging opening in the hood of a melter gasifier. The particles drop into the melter gasifier by the effect of gravity and slow their descent in the fluidized bed existing within the melter gasifier. Coal in lumpy form is charged through a charging opening arranged laterally in the hood of the melter gasifier or in a dome covering the melter gasifier towards a top, also under the influence of gravity. The reducing gas formed in the melter gasifier is withdrawn through the centrally arranged charging opening for the iron-containing material.
A process of this kind is not suitable for processing fine-particle metal carriers, in particular fine-particle sponge iron. The pronounced gas flow of the reducing gas formed in the gasification zone and withdrawn through the central charging opening arranged in the hood or in the dome of the melter gasifier carries the fine-particle metal carriers out of the melter gasifier. The temperature in the upper region of the melter gasifier, i.e. in the region above the gasification zone, is too low to ensure a melt-down, thereby contributing to an unwanted discharge of the fine-particle metal carriers. A higher temperature would provide agglomeration of the fine particles at the charging site to form bigger particles which in spite of the ascending gas stream could sink down into the gasification zone.
From EP-A -0 217 331 it is known to introduce pre-reduced fine ore into a melter gasifier and to completely reduce and melt it by means of a plasma burner while supplying a carbon-containing reducing agent. The pre-reduced fine ore or the song-iron powder respectively is fed to a plasma burner provided in the lower section of the melter gasifier. A disadvantage of this method is that by supplying the pre-reduced fine ore directly in the lower meltdown region, i.e. in the region where the melt collects, complete reduction can no longer be ensured and the chemical composition necessary for further processing the pig iron cannot be achieved. Moreover, the charging of major amounts of pre-reduced fine or is not feasible due to a fluidized or fixed bed formed from coal in the lower region of the melter gasifier. The fluidized or fixed bed prevents removal of a sufficient quantity of the melting products from the high-temperature zone of the plasma burner. The charging of major amounts of pre-reduced fine ore would lead to instant thermal and mechanical failure of the plasma burner.
From EP-B-0 111 176 it is known to feed a fine grain fraction of sponge iron particles into the melter gasifier through a downpipe projecting from the head of the melter gasifier into the proximity of the coal fluidized bed. At the end of the downpipe a baffle plate is provided for minimizing the velocity of the fine grain fraction, resulting in a very low exit velocity of the fine grain fraction from the downpipe. At the charging site, the temperature in the melter gasifier is very low, whereby immediate melting of the supplied fine grain fraction is prevented. This and the low exit velocity from the downpipe cause a substantial portion of the supplied fine grain fraction to be carried out of the melter gasifier again together with the reducing gas generated in the same. The charging of a major amount of sponge iron particles containing a fine portion or of only a fine grain fraction is not feasible in accordance with this method.
From EP-A-0 594 557 it is known to charge a fine grain fraction of sponge iron by means of a conveying gas directly into the fluidized bed formed by the gasification zone in the melter gasifier. However, this procedure is disadvantageous, since the gas circulation of the fluidized bed may be disturbed to form obstructions of the fluidized bed. The fluidized bed acts like a filter and the obstructions can ensue as a consequence of the fine grain fraction that is blown directly into the fluidized bed. As a result, eruptive outbreaks of gas may occur which will break up the clogged fluidized bed. Hereby, the gasification process for the carbon carriers and also the melt-down process for the reduced iron ore are markedly disturbed.
From EP-A-0 576 414 it is known to feed fine-particle metal carriers into the gasification zone via dust burners. This method exhibits a poor melt-in performance, which is due to a short dwelling time of the particles in the hot flame.
The invention aims to avoid these disadvantages and difficulties and has as its object to provide a method of the kind initially described as well as a melter gasifier for carrying out the method. According to the present invention the processing of fine-particulate metal carriers can be conducted without the need for briquetting. The present invention reliably avoids discharging supplied fine-particulate metal carriers, optionally in pre-reduced or in completely reduced condition, by the reducing gas produced in the melter gasifier. The present invention also ensures complete reduction, which may optionally be required, of the fine particles. It is a particular object of the invention to provide a method enabling the processing of a majority of a charge, preferably 100%, of which is/are made up of fine-particulate iron-containing material provided to pig iron and/or steel prematerial utilizing a melter gasifier.
With a method of the initially described kind, the above objects are achieved in that the fine-particulate metal carriers are charged to a high-temperature combustion zone maintained by a combustion process. The carriers, optionally upon complete reduction, are melted in the high-temperature combustion zone which is spatially isolated from the freeboard of the melter gasifier that is located above the bed and extends into the bed. The offgases formed in the high-temperature combustion zone exit by passing through at least a portion of the bed. The offgases are also cooled in the bed and are withdrawn from the melter gasifier along with the reducing gas formed within the bed.
A melter gasifier for carrying out the method according to the present invention has feed ducts for oxygen-containing gases, carbon carriers and metal carriers. The melter gasifier has at least one gas discharge duct for discharging a reducing gas produced in a bed of the melter gasifier. The reducing gas produced from the bed is formed of solid carbon carriers departing from the bed. The melter gasifier includes a tap for the metal melt and a tap for slag with at least one feed duct for feeding fine-particulate metal carriers. The feed duct opens into at least one high-temperature combustion chamber that is spatially isolated form the interior of the melter gasifier. The feed duct has a mouth that projects into the bed formed of solid carbon carriers and is provided with a burner.
To assure easy access to the high-temperature combustion chamber as well as a long service life of the same, the high-temperature combustion chamber is advantageously constructed as a wall that departs from the dome of the melter gasifier, is open at the bottom, cylindrical in shape and provided with a refractory material.
A simple construction for the chamber includes a single high-temperature combustion chamber, which is arranged centrally and with its longitudinal axis lying in the vertical longitudinal axis of the melter gasifier.
Advantageously, the high-temperature combustion chamber projects outward at its upper end through the dome of the melter gasifier. The feed duct for fine-particulate metal carriers runs into the high-temperature combustion chamber at this exterior end. The burner is arranged centrally at an outer end of the feed duct, whereby repair work to be done on the burner or exchange of the same is feasible in an easy manner.
An ideal structure of the bed is attainable if according to a preferred embodiment feed ducts for carbon carriers project through the dome of the melter gasifier at a radial distance from the high-temperature combustion chamber.
The service life can be further increased if the wall of the high-temperature combustion chamber is provided with an internal wall cooling. The wall of the high-temperature combustion chamber is accordingly equipped with finned tubes through which a cooling medium flows and the tubes are provided with a refractory lining on both sides. At the upper end and at the lower end of the high-temperature combustion chamber there are suitably provided ring-shaped headers for a cooling medium, preferably cooling water, each being integrated into the wall of the high-temperature combustion chamber.
At its end projecting outward through the dome of the melter gasifier, the high-temperature combustion chamber suitably is provided with a removable cover and the burner and the feed duct are arranged in the cover.
It is beneficial to the melt process if the burner is formed by a fine-coal/oxygen burner.

Research Institute of Industrial Science and Technology, Inc


A mechanism to allow dynamic configurations and/or diagnostic of a computer system from a remote location is provided. The computer system receives instruction codes of a program from a data source. When executed by the CPU, the instruction codes performs the necessary erase and program operations to embed a firmware program onto to the flash memory. The firmware program can be used for configurations or diagnostic purpose.

In computer systems, firmware such as device drivers or other dedicated application programs are stored in erasable programmable read only memories (EPROM). EPROM are desirable for this task because they are nonvolatile (i.e., retain data stored to it when powered off) and they allow the stored firmware to be altered and/or upgraded as desired. However, any erasure of existing firmware and programming of new firmware can only be done with the EPROM removed from the board socket using special equipment.
Flash memory (i.e., solid state memory) is a new technology that is gaining support to replace EPROM because like EPROM, flash memory is nonvolatile. On the other hand, unlike EPROM, flash memory allows for in-system update ability under system processor control. Another difference between flash memory and other rewriteable memory technologies is that for flash memory, programming may only involve changing binary ones (1) to zeros (0) while erasing may only involve changing zeros back to ones which is the default binary value of memory cells in flash memory. As such, writing a firmware into a flash memory may require both an erasing and a programming operation. Discussion on flash memory technology can be found, for example, in Brian Dipert and Markus Levy, "Designing with Flash Memory" (2d ed. 1994) which is herein incorporated by reference as background material.
FIG. 1 illustrates a block diagram of Prior Art computer system 100 which allows firmware to be erased and reprogrammed under system processor control. As an example, the firmware may be a device driver needed to operate a peripheral device attached to computer system 100. The firmware can also be a diagnostic program needed to determine the existence of errors in the operation of computer system 100 and locate the source of these errors. Furthermore, the firmware can provide configuration parameters needed for the operation of computer system 100.
Computer system 100 consists of CPU 101, memory 102, flash memory 103, and floppy drive 104 which are all coupled to bus 105. With respect to erase operations, a program is retrieved from a floppy disk by floppy drive 104 and sent to memory 102 for storage. CPU 101 then executes the instructions codes stored in memory 102 to supply the desired voltage potentials across memory cells in flash memory 103 to carry out an erase operation. Similarly, in programming operations, a program is retrieved from a floppy disk by floppy drive 104 and sent to memory 102 for storage. CPU 101 then executes the instruction codes of the program stored in memory 102 to supply the desired voltage potentials across selective memory cells in flash memory 103 to program the firmware into flash memory 103.
Under the Prior Art, to program flash memory 103, a copy of the program must be available on site for the firmware to be programmed into flash memory 103. At best, a delay associated with shipping the program to the field may cause some inconveniences. At worst, such as the case involving a diagnostic program, a delay may halt usage of computer system 100 until the system error(s) can be detected and corrected.
Thus, a need exists for an arrangement, system, and method to allow firmware to be dynamically written into a programmable memory from a remote location.

Self-booting mechanism to allow dynamic system configuration and diagnostic


A protection circuit for a pnp-type output transistor includes a pnp-type monitor transistor through which a current 1/n (where n>1) times as high as the output current of the output transistor passes. A first, second, and third resistor are connected between the output electrode of the output transistor and ground. An output terminal is connected to the collector of the output transistor. A fourth and fifth resistor are connected serially between the output current of the monitor transistor and ground. When the voltage at the node between the fourth and fifth resistors exceeds a predetermined level, the conduction biases for the output and monitor transistors are reduced. When the voltage at the node between the first and second resistors drops below the voltage at the output side of the monitor transistor, the conduction biases are further reduced in accordance with the voltage difference.

1. Field of the Invention
The present invention relates to an output transistor protection circuit for use in a power supply circuit, audio power amplifier, or the like.
2. Description of the Prior Art
In a power supply circuit, audio power amplifier, or the like, an output transistor may be subjected to momentary overcurrent when, for example, the load is in trouble. Therefore, in such circuits, it is essential that the output transistor be protected from destruction by some protection circuit.
FIG. 1 shows an example of a conventional output transistor protection circuit. In this protection circuit, the transistor T10 serves as an output transistor, and its collector is connected to an output terminal 30 and is also connected through resistors R11 and R12 to ground. The node a between these resistors R11 and R12 is connected to the base of the transistor T6.
In this protection circuit, the transistors T1 to T8 constitute a comparator 31. This comparator 31 compares the voltage Va at the node a with a reference voltage Vref, which is applied to the base of the transistor T1. The output current I.sub.1 from the comparator 31 is fed through the transistors T7 and T8 to the base of the output transistor T10 as negative feedback. Accordingly, the comparator 31 serves to keep the voltage Va at the node a equal to the reference voltage Vref. Numeral 32 represents a constant current source.
The transistor T11 serves as a monitor transistor, and its base and emitter are connected to the base and emitter, respectively, of the output transistor T10. The monitor transistor T11 is so formed that, when a current I flows through the output transistor T10, a current 1/n times as high as that current I (i.e. a current I/n) flows through the transistor T11. The collector of the monitor transistor T11 is connected through a resistor R13 to ground and is also connected directly to the base of the npn-type transistor T9.
This protection circuit feeds its output current Io via the output terminal 30 to a load (not shown). As the output current Io increases, the current I increases accordingly, and so does the current I/n, which flows through the transistor T11 and the resistor R13. As a result, the voltage Vb across the resistor R13 rises above the threshold voltage of the transistor T9 and thereby turns on the transistor T9.
In normal condition, the transistors T2 and T3 are balanced, so that the transistor T3 feeds a constant current to the base of the transistor T7. However, once the transistor T9 is turned on, the base current of the transistor T7 decreases accordingly, and so does the current I.sub.1, which flows through the transistor T8. As a result, the base currents of the transistors T10 and T11 decrease, and thus both of the currents I and I/n decrease. In this way, overcurrent is suppressed.
As described above, in the conventional protection circuit, overcurrent is prevented by turning on the transistor T9 and thereby decreasing the drive current (the base current, in this case) to the output transistor T10. However, since this protection circuit uses negative feedback, it attempts to keep its balance and thus to operate linearly even when the transistor T9 is turned on. As a result, this protection circuit exhibits an operation characteristic as shown in FIG. 2. As seen from FIG. 2, the conventional protection circuit operates too slowly to achieve effective protection against momentary overcurrent (such as rush current). In FIG. 2, the output current Io is taken along the horizontal axis, and the output voltage Vo is taken along the vertical axis.
Moreover, in the conventional protection circuit, the output current Io is at its maximum when the output voltage Vo is clamped at a comparatively low level as indicated by A in FIG. 2. In addition, since the voltage between the collector and emitter of the transistor T10 equals Vcc-Vo, this voltage becomes higher as the output voltage Vo at the node A becomes lower. This means that the transistor T10 is in some cases subjected simultaneously to overvoltage and overcurrent, each of which is on its own damaging to any transistor. Thus, the conventional protection circuit exposes the transistor 10 to higher risk of destruction.


An internal gear 10 is rotatably received within a housing 8 (planetary carrier 2 and case 4), and a sun gear 12 is rotatably disposed on a circle located inside of and concentric with the internal gear 10. Planet gears 14 which are carried within carrying openings 2c formed in a planetary carrier 2 are disposed between the internal gear 10 and the sun gear 12 in meshing engagement with the internal gear 10 and the sun gear 12. The internal gear 10, the sun gear 12 and the planet gears 14 each have spherical gear teeth, and develops a thrust upon occurrence of a relative rotation therebetween. A coupling 16 is connected to the inner periphery of the internal gear 10 through helical splines 10d and 16a for purpose of power transmission. The helical splines provide a novel thrust generating mechanism, which enlarges the extent in which a bias ratio can be adjusted.

The present invention relates to a differential gearing for vehicle, and in particular, to a differential gearing for vehicle of a planetary gear type with a torque responsive differential action limiting function or torque distribution function.
A differential gearing for vehicle of a planetary gear type comprising an internal gear having internal teeth formed around an internal peripheral surface thereof, a sun gear disposed on a circle located inside of and concentric with the internal gear, a plurality of planet gears disposed between the internal gear and the sun gear in meshing engagement with the both gears, and a planetary carrier for carrying the planet gears for rotation about the axis of rotation of the internal gear and the sun gear while permitting the planet gears to rotate about their own axes with an arrangement that a shaft which transmits a drive from an engine is connected to the planetary carrier while the internal gear and the sun gear are connected to front and rear wheels of a four wheel driven vehicle, for example, is known in the art.
FIG. 11 shows an exemplary differential gearing for vehicle of a planetary gear type mentioned above and a conventional differential gearing will be described briefly with reference to FIG. 11. A planetary carrier 102 and a case 104 are secured together to define a housing 108 in which an internal gear 110 is received, and a sun gear 112 is disposed on a circle located inside of and concentric with the internal gear 110. A plurality of planet gears 114, which are carried by the planetary carrier 102, are disposed between the internal gear 110 and the sun gear 112 in meshing engagement with the both gears 110 and 112. In the arrangement shown in FIG. 11, the internal gear 110, the sun gear 112 and the planet gears 114 have helical gear teeth which are in meshing engagement with one another.
While not shown, the planetary carrier 102 has a cylindrical portion which extends into the inside of the internal gear 110 and which is formed with a plurality of openings at a given interval in which the planet gears 114 are received, respectively, in a rotatable manner. When the planet gears 114 rotate about their own axes, the tooth tips thereof slide against the internal surface of the openings.
The internal gear 110 has a cylindrical portion 110b and a flange 110c which extends radially inward from one end (right end as viewed in FIG. 11) of the cylindrical portion 110b. Internal teeth 110a are formed around the inner peripheral surface of the cylindrical portion 110b while splines 110d (see FIG. 13) are formed around the inner peripheral surface of the flange 110c. Splines 110d in the flange 110c are engaged by splines 116a formed around the outer periphery of a coupling 116. The splines 110d and 116a which connect the internal gear 110 and the coupling 116 together to transmit a power have been straight splines which extends parallel to an axis L3 in a conventional arrangement.
Washers 120, 118 and 124 are interposed between one end face (right end face as viewed in FIG. 11) of the coupling 116 which is connected with the internal gear 110 through the straight splines and the internal surface of the case 104, between the other end face of the coupling 116 and the end face of the sun gear 112, and between the other end face of the sun gear 112 and the internal surface of the planetary carrier 102. Washers 128 and 126 are interposed between the external surface (right-hand surface as viewed in FIG. 11) of the flange 110c of the internal gear 110 and the internal surface of the case 104 and between the internal surface of the flange 110c and the tip end face of the planet gears 114.
In the differential gearing for vehicle constructed in the manner mentioned above, a drive from an engine is transmitted to the planetary carrier 102 while one of front and rear wheels of a four wheel driven vehicle is connected to splines 116b formed around the inner periphery of the coupling 116 which is spline-connected to the internal gear 110 and the other wheel is connected to splines 112b formed around the inner periphery of the sun gear 112.
In the differential gearing for vehicle, when an drive from an engine is transmitted, the planetary carrier 102 which carries the planet gears 114 is driven for rotation, and if the vehicle is running straightforward on a good road surface, the planet gears 114 carried by the planetary carrier 102 as well as the internal gear 110 and the sun gear 112 which mesh with the planet gears 114 rotate in an integral manner without a relative rotation therebetween. When cornering, the planet gears 114 carried by the planetary carrier 102 rotate about their own axes, thereby correcting for a differential rotation of the front and the rear drive wheel which are connected to the internal gear 110 and the sun gear 112, respectively.
When the coefficients of friction which the front and the rear wheel experience from the road surface are different to produce a difference in the grip of the front and the rear drive wheel, a torque distribution function or a function to limit the differential action is provided by a frictional force which results from a sliding motion of the tooth tip of the planet gears 114 which are held within the gear holding openings formed in the planetary carrier 102 to rotate against the internal peripheral surface of the openings, and by a frictional force utilizing thrusts resulting from the meshing engagement between the helical gear teeth of the internal gear 110 and the planet gears 114 and the sun gear 112.
For example, when an input from the engine is applied to the planetary carrier 102 while an output from the internal gear 110 is applied to the rear wheel and an output from the sun gear 112 is applied to the front wheel as mentioned previously, it follows that in the drive mode, a thrust (see an arrow A shown in FIG. 11) which results from the meshing engagement between the planet gears 114 and the internal gear 110 acts on the washer 128 disposed on the end of the internal gear 110 located toward the case 104 to produce a frictional force, and a thrust (see an arrow B in the same Figure) which results from the meshing engagement between the planet gears 114 and the sun gear 112 acts on the washer 124 disposed on the end of the sun gear 112 located toward the planetary carrier 102 to produce a frictional force. In this instance, the locations where the frictional forces are developed are limited to the washers 128 and 124, resulting in a low bias ratio (torque distribution ratio) obtained.
During the coasting mode (see FIG. 12), that is a condition of a run by inertia, a thrust (see an arrow C) which results from the meshing engagement between the planet gears 114 and the internal gear 110 acts on the washer 126 located between the internal gear 110 and the planet gears 114 to produce a frictional force, and a thrust (see an arrow D) which results from the meshing engagement between the planet gears 114 and the sun gear 112 acts on the washer 118 disposed between the sun gear 112 and the coupling 116 to produce a frictional force. In addition, a thrust from the sun gear 112 is applied to the intermediate washer 118 to produce a frictional force upon the washer 120 disposed between the coupling 116 and the internal surface of the case 104, thereby allowing a bias ratio to be obtained which is of a median level greater than the bias ratio obtained during the drive mode.
In the differential gearing for vehicle of the prior art which is constructed in the manner mentioned above, an approach is available which adjusts the bias ratio in accordance with the helix angle of the helical gear in order to obtain a bias ratio which is desired depending on the characteristic of the vehicle. However, a manufacturing difficulty is involved in achieving a desired helix angle, and it has been difficult to obtain an optimum bias ratio according to such adjustment approach alone. In particular, in order to improve a limit on the drive and the dynamic behavior of the vehicle, it is necessary to achieve a higher bias ratio, but a sufficiently high bias ratio cannot be obtained with a conventional approach.
At this end, a differential gearing with an arrangement to achieve a high bias ratio (a differential action limiting function) has been proposed (see Japanese Laid-Open Patent Application No. 9-144,844). According to the differential gearing disclosed in this cited Patent Application, a multiple-disk clutch acting as means which intensifies the force limiting the differential action is disposed between the internal gear and the planet gears (which are referred to as pinion gears in the cited Patent Application).


A torque sensor is disclosed based on a SAW die configured on a surface of a plate, and an isolator formed from a flexible material. The isolator is rigidly mounted to the plate, such that the isolator flexes when a force perpendicular to the surface of the plate are applied while transferring a torque that is applied within a plane of the plate to the SAW die, thereby eliminating or minimizing the effect on the SAW die of out-of-plane forces on the plate so as to isolate the torque transferred to the plate.

Passive sensors employing acoustic wave components for measuring torque are well known in the art. Torque measurement devices are an emerging technology with varied applications in automotive, transportation, rail and other similar segments for use in transmission and chassis applications, to name a few. Acoustic wave sensors are so named because they use a mechanical or acoustic wave as the sensing mechanism. As the acoustic wave propagates through or on the surface of the material, any changes to the characteristics of the propagation path affect the velocity, phase, and/or amplitude of the wave.
Working at very high frequencies, these extremely high-quality value (high Q value) sensing devices can be wirelessly excited with an interrogation pulse and a resonant frequency response measured allowing strain to be calculated. Torque can be sensed by using appropriate packaging and algorithms to deduce the value of the sensed property from the returned signal. These devices are cost-effective to manufacture, remarkably stable, and offer significantly higher performance than their 20th century, resistance gauge counterparts.
Unlike a conventional wire strain gauge, an acoustic wave torque sensor can store energy mechanically. Once supplied with a specified amount of energy (e.g., via radio frequency), these devices can function without cumbersome oscillators or auxiliary power sources. This capability has been exploited in many wireless/passive sensing operations, such as tire pressure sensors, and optimization of power-train efficiency.
When an acoustic wave device is used in sensor applications, the effect of an electric pulse applied to the inter-digital transducers (IDTs) is to cause the device to act as a transducer. The electric signal is converted to an acoustic wave which is transmitted via the piezoelectric substrate to the other IDTs. Upon arrival of the acoustic wave at the IDTs, the transducing process is reversed and an electric signal is generated. This output signal has a characteristic resonant frequency, or delay time which is dependent upon a number of factors including the geometry of the IDT spacing. Since the IDT spacing varies with strain/stress when the substrate is deformed, any change in this condition can be monitored by measuring the acoustic wave device frequency or delay time.
One of the problems with currently implemented torque sensors is the effect on the utilized SAW die of out-of-plane forces during torque sensing operations. Such out-of-plane forces tend to damage the resulting torque sensor, or at the very least, result in numerous torque sensor error readings. A need therefore exists for an improved apparatus or method for eliminating or minimizing such an effect on a SAW die utilized in torque sensor devices.

Out-of-plain strain elimination acoustic wave torque sensor


A system and method of identifying loose patterns using a smart multiset intersection operation are provided. Data segments are received from a data segmentation algorithm and sorted into corresponding multisets. A retain operation may be performed on the multisets. A normalization operation is then performed on the repeating elements in the multisets to identify the loose pattern. The loose pattern is stored in a database.

This disclosure relates to the field of pattern recognition in artificial intelligence and more specifically to a method for pattern matching that identifies loose patterns in input data segments.
A pattern may be defined as a string that matches another string within a set of data. A string may comprise one or more characters, symbols, or expressions. Herein, characters, symbols, expressions, elements, etc. will be more generally referred to by the term "symbols". For example, the string 'ABC' may be considered a pattern in the data set 'ABCABC', and similarly in data set 'ABCddABC'. U.S. patent application Ser. No. 11/550,714, filed Oct. 18, 2006, entitled "Intelligence Engine Software Architecture", and incorporated by reference herein for all purposes, classifies patterns as "tight" or "loose". In general, tight patterns refer to strings that reoccur or repeat in a particular sequence or order within a set of data. Loose patterns refer to discrete symbols that reoccur within a set of data in a non-sequential, non-ordered manner. For example, in a data set 1, DS1=3-2-1-5-4-2 and a data set 2, DS2=1-5-0-4-3-5, the loose pattern would be 1-3-4-5.
Pattern matching algorithms, such as Rabin-Karp, Knuth-Morris-Pratt, Boyer-Moore, and other similar algorithms well known in the art are particularly efficient at identifying tight patterns in data sets. However, in data sets that contain loose patterns, conventional pattern matching algorithms are ineffective. A need exists for a pattern matching approach that can identify loose patterns in data sets.

Method of pattern identification using retain operators on multisets


A magnetic assembly includes a magnetic core and a winding. The magnetic core comprises an upper cover, a lower cover and at least one core column provided between the upper cover and the lower cover, the core column presents a prismatic shape and has at least two lateral surfaces, the lateral surfaces intersect with each other to form at least two longitudinal ridges, and the longitudinal ridge extends along the longitudinal direction of the core column. The winding, winding around the core column, a first semi-conductive component is provided between the core column and the winding at the position corresponding to the longitudinal ridge.

In medium-high voltage electric system, the volume and weight occupied by the medium-high voltage reactor or the medium-high voltage transformer etc. of the magnetic assembly are large.
However, higher requirements of the power density and reliability of the magnetic assembly may be put forward as with the medium-high voltage electric systems continues to evolve.
However, the above-mentioned magnetic assembly has a high operating voltage and a severe working environment, which may easily cause partial discharge between the winding and the core column. In the conventional technology, the partial discharge is reduced mainly by increasing the distance between the winding and the core column, however, the above method greatly increases the volume of the magnetic assembly, and it is difficult to compromise reliability and power density requirements.
Therefore, there is an urgent need to develop a magnetic assembly that overcomes the above drawbacks.
The above information disclosed in this BACKGROUND section is only for enhanced understanding of the background of the disclosure and therefore it may contain information that does not constitute the relevant technology known to those skilled in the art.


The mounting arrangement is applied to a refrigeration compressor having a shell (1) externally carrying energizing pins (2) and comprises: a connector (10) to be mounted to the shell (1) and having a non-electric conducting base body (11) which houses and retains electric terminals (4) attached to an electric supply cable (3) and which are designed to fit said energizing pins (2), one of the parts of shell (1) and base body (11) of the connector (10) carrying locking means (20) to be engaged to respective locking receiving means (30) provided in the other part, when the connector (11) is mounted to the shell (1); and an elastic sealing means (40) carried by one of the parts of shell (1) and connector (11) and to be pressed between said parts, around the energizing pins (2), when the connector (11) is mounted to the shell (1).

Refrigeration compressors present, mounted in the hermetic shell thereof, a hermetic terminal having energizing pins externally projecting from the shell and to which is coupled a cable to supply electric energy to the compressor motor housed in the interior of the hermetic shell, said electric supply cable being connected to an electric power source external to the compressor.
In a known solution, the electric supply cable is mounted to the hermetic terminal, by means of electric terminals, generally housed in an electric insulation core. Moreover, in order to protect the user against electric shocks, the electric insulation core that involves the electric terminals is covered by a connector body made in an electric insulating material and which is removably locked, by engaging means, to a supporting structure welded to the compressor shell, in the region adjacent to the hermetic terminal which carries the energizing pins. In these known constructions, the supporting structure welded to the hermetic shell is configured to provide only one locking receiving means designed to receive and retain a single locking means provided in the connector body or cover, the dimensioning and positioning of the supporting structure of both the locking receiving means and locking means being made within determined tolerances, to guarantee the desired stability to the seating and retention of the connector to the shell, with the electric terminals being safely fitted in the respective energizing pins. Since the parts involved in the desired mounting coupling are rigid or substantially rigid, any dimensional deviation will cause the connector to remain electrically coupled to the energizing pins, but in a position in which it is not adequately pressed against the shell of the compressor, making this mounting susceptible to vibrations during the operation of the compressor and also permitting humidity to penetrate between the connector and the shell, towards the energizing pins, with potential risks of causing undesirable short circuits and electric contacts.
Apart from the deficiency mentioned above in relation to the known mounting arrangements, the connector has its body designed to receive the electric supply cable according to an axial direction coincident with that of the energizing pins, requiring a larger space for mounting the compressor so as to accommodate the electric supply cable extension axially projecting from the connector.
Another negative aspect of the known mounting arrangements results from the fact that the connectors do not define a means that can provide an adequate and safe mechanical retention of the electric supply cable in the connector body.

Mounting arrangement for an electric supply cable having a connector with a sealing ring and locking means


In general, techniques are described for selecting types of switches and corresponding input/output methods for virtualized network functions (VNFs) of a network service and selecting one or more host computing devices to host the VNFs for the network service to realize the selected types of switches and corresponding input/output methods for the VNFs. For example, a controller that performs aspects of NFV management and orchestration (MANO) receives requirements for a network service to be provisioned in the NFVI. Based on the requirements for the network service, which may specify one or VNFs and may specify individual requirements for each VNF, the controller selects a type of switch and corresponding input/output method for each VNF.

A computer network is composed of a set of nodes and a set of links that connect one node to another. For instance, a computer network may be composed of a set of routers while the set of links may be paths between the routers. When a first node in the network sends data traffic to a second node in the network, the message may pass through many links and many nodes. The set of links and nodes that the message passes through while traveling from the first node to the second node is referred to as a path through the network.
Software-defined networking (SDN) and Network Functions Virtualization (NFV) have revolutionized the traditional communication network architectures and have transformed the way communication service providers (CSPs) design their network infrastructure and services. NFV is a network architecture concept that uses the technologies of Information Technology virtualization to virtualize entire classes of network functions into building blocks that can be connected, or chained together, to create communication services.
SDN and NFV use standard virtualization technologies to virtualize entire classes of network functions that can be connected or chained together to create network services. The initial interest in introducing SDN and NFV into communication services has been driven by the desire to lower capital costs by replacing dedicated network hardware with generic x86 platforms, and to lower operating costs by leveraging cloud automation tools. As the revolution has progressed, focus has shifted towards a foundational transformation in managed communication services, a migration toward a telecommunication (telco) cloud, and the emergence of distributed virtualized infrastructures.
The NFV architecture includes multiple virtualized network functions (VNFs). A network operator may deploy NFV Infrastructure in the form of one or more computing devices to apply, to data traffic traversing a computer network, network services such as firewall, carrier grade network address translation (CG-NAT), performance enhancement proxies for video, transport control protocol (TCP) optimization and header enrichment, caching, and load balancing. Each of these network services may be referred to as a network function and may be performed by a virtualized network function, which may executed by one or more virtual machines, containers, or other execution environment of the NFV Infrastructure. In this way, virtualized network functions may be executed by servers, switches, storage devices, and cloud computing infrastructure, instead of having custom hardware appliances for each network function.

Automated packet switch type and host selection for efficient virtualized network function service chaining


This invention relates to an isolated nucleic acid sequence encoding isoflavone synthase. The invention also relates to the construction of chimeric sequences encoding all or a substantial portion of the enzymes, in sense or antisense orientation, wherein expression of the chimeric sequence results in production of altered levels of the enzyme in a transformed host cell.

Isoflavonoids represent a class of secondary metabolites produced in legumes by a branch of the phenylpropanoid pathway and include such compounds as isoflavones, isoflavanones, rotenoids, pterocarpans, isoflavans, quinone derivatives, 3-aryl-4-hydroxy-coumarins, 3-arylcoumarins, isoflav-3-enes, coumestans, alpha-methyldeoxybenzoins, 2-arylbenzofurans, isoflavanol, coumaronochromone and the like. In plants, these compounds are known to be involved in interactions with other organisms and to participate in the defense responses of legumes against phytopathogenic microorganisms (Dewick, P. M. (1993) in The Flavonoids, Advances in Research Since 1986, Harborne, J. B. Ed., pp. 117–238, Chapman and Hall, London). Isoflavonoid-derived compounds also are involved in symbiotic relationships between roots and rhizobial bacteria which eventually result in nodulation and nitrogen-fixation (Phillips, D. A. (1992) in Recent Advances in Phytochemistry. Vol. 26, pp 201–231, Stafford, H. A. and Ibrahim, R. K., Eds, Pleneum Press, New York), and overall they have been shown to act as antibiotics, repellents, attractants, and signal compounds (Barz, W. and Welle, R. (1992) Phenolic Metabolism in Plants, pg 139–164, Ed by H. A. Stafford and R. K. Ibrahim, Plenum Press, New York).
Isoflavonoids have also been reported to have physiological activity in animal and human studies. For example, it has been reported that the isoflavones found in soybean seeds possess antihemolytic (Naim, M., et al. (1976) J. Agric. Food Chem. 24:1174–1177), antifungal (Naim, M., et al. (1974) J. Agr. Food Chem. 22:806–810), estrogenic (Price, K. R. and Fenwick, G. R. (1985) Food Addit. Contam. 2:73–106), tumor-suppressing (Messina, M. and Barnes, S. (1991) J. Natl. Cancer Inst. 83:541–546; Peterson, G., et al. (1991) Biochem. Biophys. Res. Commun. 179:661–667), hypolipidemic (Mathur, K., et al. (1964) J. Nutr. 84:201–204), and serum cholesterol-lowering (Sharma, R. D. (1979) Lipids 14:535–540) effects. These epidemiological studies indicate that isoflavones in soybean protein products, when taken as a dietary supplement, may produce many significant health benefits.
Free isoflavones rarely accumulate to high levels in soybeans. Instead they are usually conjugated to carbohydrates or organic acids. Soybean seeds contain three types of isoflavones in four different forms: the aglycones, daidzein, genistein and glycitein; the glucosides, daidzin, genistin and glycitin; the acetylgucosides, 6″-O-acetyldaidzin, 6″-O-acetylgenistin and 6″-O-acetylglycitin; and the malonylglucosides, 6″-O-malonyldaidzin, 6″-O-malonylgenistin and 6″-O-malonylglycitin. In accordance with the present invention, all of these compounds are included in the term isoflavonoids. The content of isoflavonoids in soybean seeds is quite variable and is affected by both genetics and environmental conditions such as growing location and temperature during seed fill (Tsukamoto, C., et al. (1995) J. Agric. Food Chem. 43:1184–1192; Wang, H. and Murphy, P. A. (1994) J. Agric. Food Chem. 42:1674–1677). In addition, isoflavonoid content in legumes can be stress-induced by pathogenic attack, wounding, high UV light exposure and pollution (Dixon, R. A. and Paiva, N. L. (1995) Plant Cell 7:1085–1097).
The biosynthetic pathway for isoflavonoids in soybean and their relationship with several other classes of phenylpropanoids is presented in FIG. 1. Many of the enzymes involved in the synthesis of isoflavonoids in legumes have been identified and many of the genes in the pathway have been cloned. These include three P450-dependent monooxygenases, cinnamate 4-hydoxylase (Potts, J. R. M., et al. (1974) J. Biol. Chem. 249:5019–5026), isoflavone 2′-hydroxylase (Akashi, T. et al. (1998) Biochem. Biophys. Res. Commun. 251:67–70), and dihydroxypterocarpan 6a-hydroxylase (Schopfer, C. R., et. al. (1998) FEBS Lett. 432:182–186). However, to date the gene encoding isoflavone synthase, the first step in the phenylpropanoid branch that commits metabolic intermediates to the synthesis of isoflavonoids, has been neither identified nor cloned from any species. In this central reaction, 2S-flavanone is converted into an isoflavonoid such as genistein and daidzein. The enzymatic reaction for this oxidative aryl migration step was first reported by Hagmann, M. L. and Grisebach, H. ((1984) FEBS Lett. 175.199–202). The reaction involves a P450 monoxygenase-mediated conversion of the 2S-flavanone to a 2-hydroxyisoflavanone, followed by conversion to the isoflavonoid. This last step is possibly mediated by a soluble dehydratase (Kochs, G. and Grisenbach, H. (1985) Eur. J. Biochem. 155:311–318). However, the 2-hydroxyisoflavanone intermediate was described as unstable and could convert directly to genistein.
Cytochrome P450-dependant monooxygenases comprise a large group of heme-containing enzymes, most of which catalyze NADPH- and O2-dependant hydroxylation reactions. Most of these enzymes do not use NADPH directly, but rely upon an interaction with a flavoprotein known as a P450 reductase that transfers electrons from the cofactor to the P450. Cloning of plant P450s by traditional protein purification strategies has been difficult, as these membrane-bound proteins are often very unstable and are typically present in low abundance. PCR-based cloning strategies using sequence homologies between P450s has increased dramatically the number of P450 genes cloned. However, the in vivo activity of many of these cloned genes remains unknown and they are classified simply as P450s, and are grouped into families based solely on sequence homology (Chapple, C. (1998) Annu. Rev. Plant Physiol. Plant Mol. Bio. 49:311–343). Proteins that are greater than 55% identical are designated as members of the same subfamily, while P450s that are 97% identical, or greater, are assumed to be allelic variants of the same gene (Chapple, C. (1998) Annu. Rev. Plant Physiol. Plant Mol. Bio. 49:311–343).
Efforts to determine in vivo activities of existing P450 clones are increasing. Most efforts involve expressing genes or cDNAs for P450s in yeast or insect cell systems, and then screening for a particular activity. For example, isoflavone 2′-hydroxylase (Akashi, T., et al. (1998) Biochem. Biophys. Res. Commun. 251:67–70) and dihydroxypterocarpan 6a-hydroxylase (Schopfer, C. R., et al. (1998) FEBS Letters 432:182–186) were identified in this manner.
The physiological activities associated with isoflavonoids in both plants and humans makes the manipulation of their contents in crop plants highly desirable. For example, increasing levels of isoflavonoid in soybean seeds would increase the efficiency of extraction and lower the cost of isoflavone-related products sold today for use in either reduction of serum cholesterol or in estrogen replacement therapy. Decreasing levels of isoflavonoid in soybean seeds would be beneficial for production of soy-based infant formulas where the estrogenic effects of isoflavonoid are undesirable. Raising levels of isoflavonoid phytoalexins in vegetative plant tissue could increase plant defenses to pathogen attack, thereby improving plant disease resistance and lowering pesticide use rates. Manipulation of isoflavonoid levels in roots could lead to improved nodulation and increased efficiencies of nitrogen fixation. To date, however, it has proven difficult to develop soybean or other plant lines with consistently high levels of isoflavonoid. Because isoflavone synthase is the central reaction in pathways producing isoflavonoids, identification of this functional gene is extremely important, and its manipulation via molecular techniques is expected to allow production of soybeans and other plants with high, stable levels of isoflavonoid. Introduction of the isoflavone synthase gene in non-legume crop species including, but not limited to, corn, wheat, rice, sunflower, and canola could lead to synthesis of isoflavonoids. The expression of isoflavonoids would confer to these species disease resistance and/or properties which produce human/livestock health benefits.
Substrates for isoflavone synthase may be limiting for synthesizing very high levels of isoflavonoids in soybean, or for synthesizing isoflavonoids in non-legumes. It is desirable to increase the flux of metabolites through the phenylpropanoid pathway to provide additional amounts of substrate to those occurring naturally. Different stress conditions such as UV irradiation, phosphate starvation, prolonged exposure to cold, and chemical (such as herbicide) treatment can cause activation of the phenylpropanoid pathway. While these treatments may produce the desired substrate availability, it is more desirable to have a genetic means of activating the phenylpropanoid pathway. It is known that expression of genes encoding certain transcription factors can regulate the expression of various genes that encode enzymes of the phenylpropanoid pathway. These include, but are not limited to, the C1 myb-type transcription factor of maize and the AmMyb305 of Antirrhinum majus. The C1 myb-type transcription factor of maize, in conjunction with the myc-type transcription factor R, activates chalcone synthase and chalcone isomerase genes (Grotewold, E., et al. (1998) Plant Cell 10:721–740). The Antirrhinum majus AmMyb305 activates the phenylalanine ammonia lyase promoter (Sablowski, R. W., et al. (1994) EMBO J. 13:128–137). Transcription factors such as these may be expressed in host plant cells to activate expression of genes in the phenylpropanoid pathway thereby increasing the encoded enzyme activities and the flux of compounds through the pathway. Increases in the precursors to substrates of isoflavone synthase would enhance the production of isoflavonoids.

Nucleic acid sequences encoding isoflavone synthase


A differential amplifier includes an input stage circuit including a first differential pair and a second differential pair which are complementary to each other; a first current mirror circuit connected with the first differential pair and configured to function as an active load; a second current mirror circuit connected with the second differential pair and configured to function as an active load; an output stage circuit having a pair of output transistors connected in series between a higher power supply and a lower power supply; an operation point setting circuit configured to set an operation point of the output transistors; and a floating constant current source connected between an input terminal of the first current mirror circuit and an input terminal of the second current mirror circuit, and configured to supply a constant current. The first current mirror circuit and the second current mirror circuit supply superimpose an output of the input stage circuit on a current corresponding to the constant current by the floating constant current source to supply to the operation point setting circuit.

1. Field of the Invention
The present invention relates to an operational amplifier, and more particularly relates to an operational amplifier suitable to drive a capacitive load.
2. Description of the Related Art
An operational amplifier is conventionally formed from bipolar transistors. However, in recent years, the operational amplifier is often formed from MOS transistors because of the necessity of coexistence with a MOS circuit and the request of a low power. It is possible to employ a circuit configuration of the operational amplifier of the MOS transistors by using the analog characteristics peculiar to the MOS transistors, and the configuration is different from the operational amplifier of the bipolar transistors. As one of the application fields of the operational amplifier of the MOS transistors, there is a TFT_LCD (Thin Film Transistor Liquid Crystal Display) driver LSI. This LCD driver LSI contains a plurality of operational amplifiers each having a voltage follower configuration as buffer circuits. In particular, a device having a small offset voltage difference between the plurality of operational amplifiers is required. This is because the characteristics of the TFT LCD causes even the voltage difference of 10 mV to be recognized as a different gradation by the eye of a human. Thus, this field requires the MOS operational amplifier of the very small offset voltage.
FIG. 1 is a circuit diagram showing the configuration of the operational amplifier disclosed in Japanese Laid Open Patent Publication (JP-A-Showa, 61-35004). This conventional operational amplifier is a typical amplifier with a class AB output circuit and includes a driver circuit 1, P-channel MOS transistors 2 and 3, N-channel MOS transistors 4 and 5 and constant current sources 8 and 9. The output of the driver circuit 1 is connected to a drain of the P-channel MOS transistor 2, a source of the N-channel MOS transistor 4, a gate of the N-channel MOS transistor 5 and a constant current source 9 to drive the output circuit based on a signal supplied to an input terminal. The other end of the constant current source 9 is connected to a negative voltage power source VSS2. A source of the N-channel MOS transistor 5 is also connected to the negative voltage power source VSS2, and a drain thereof is connected to an output terminal VOUT and a drain of the P-channel MOS transistor 3. A source of the P-channel MOS transistor 3 is connected to a positive voltage source VDD2, and a gate thereof is connected to the constant current source 8, a source of the P-channel MOS transistor 2 and a drain of the N-channel MOS transistor 4. The other end of the constant current source 8 is also connected to the positive voltage source VDD2. A gate of the P-channel MOS transistor 2 is connected through a constant voltage source 6 to the positive voltage source VDD2, and biased lower by a constant voltage than the positive voltage source VDD2. A gate of the N-channel MOS transistor 4 is connected through a constant voltage source 7 to the negative voltage power source VSS2 and biased higher by a constant voltage than the negative voltage power source.
When this amplifier is used as an operational amplifier, the driver circuit 1 is usually constituted of a differential amplifier. FIG. 2 shows a circuit example of the differential amplifier. This differential amplifier includes P-channel MOS transistors 10 and 11 of a differential pair, N-channel MOS transistors 12 and 13 of a current mirror circuit, and a constant current source 14. Gates of the P-channel MOS transistors 10 and 11 are connected to a negative inversion input terminal Vin (−) and a positive input terminal Vin (+), respectively. The constant current source 14 is connected between sources of the P-channel MOS transistors 10 and 11 and the positive voltage source VDD2. A source of the N-channel MOS transistor 12 is connected to the negative voltage power source VSS2, and a gate and drain are connected to a drain of the P-channel MOS transistor 10. A source of the N-channel MOS transistor 13 is connected to the negative voltage power source VSS2, and a gate is connected to a gate of the N-channel MOS transistor 12, and a drain thereof is connected to a drain of the P-channel MOS transistor 11. A node to which the drain of the P-channel MOS transistor 11 and the drain of the N-channel MOS transistor 13 are connected serves as an output terminal Vout1 of the differential amplifier. The output terminal Vout1 serves as the output of the driver circuit 1 and is connected to the gate of the N-channel MOS transistor 5 of the amplifier shown in FIG. 1. The differential input signals, which are applied to the negative input terminal Vin (−) and the positive input terminal Vin (+), are received by the P-channel MOS transistors 10 and 11. The outputs from the differential pair appear in the drains of the P-channel MOS transistors 10 and 11. The differential output signals are supplied to the current mirror circuit (the N-channel MOS transistors 12 and 13) serving as the active load. The N-channel MOS transistors 12 and 13 convert the differential output signals into a single end signal, which is outputted from the output terminal Vout1. At this differential stage, the input voltage range is represented by the following equation when the input voltage is assumed to be Vin.0<Vin<VGS(10/11)+VDS(sat)(14) Here, VGS(10/11) is the voltage between the gate and the source of each of the P-channel MOS transistors 10 and 11, and VDS(sat)(14) is the voltage between the drain and the source at the saturation point of the P-channel MOS transistor of the constant current source 14. Outside this range, the voltage between the drain and the source of the MOS transistor of the constant current source 14 cannot be generated. Thus, a current I of the constant current source 14 is 0. Therefore, the differential stage does not operate outside this range.
On the contrary, an example of a circuit that insures the operations in the whole voltage range is a so-called Rail-to-Rail amplifier shown in FIG. 3. This differential amplifier includes P-channel MOS transistors 19 and 20 of a P-channel differential pair 31; N-channel MOS transistors 21 and 22 of an N-channel differential pair 32; N-channel MOS transistors 23 and 24 of a current mirror circuit 35; P-channel MOS transistors 15 and 16 of a current mirror circuit 33; P-channel MOS transistors 17 and 18 of a current mirror circuit 34; and constant current sources 25 and 26.
The negative input terminal Vin (−) and the positive input terminal Vin (+) are connected to gates of the P-channel MOS transistors 19 and 20 and gates of the N-channel MOS transistors 21 and 22, respectively. Sources of the P-channel MOS transistors 19 and 20 are commonly connected to each other and connected through a constant current source 26 to the positive voltage source VDD2. Drains of the P-channel MOS transistors 19 and 20 are connected to drains of the N-channel MOS transistors 23 and 24, respectively, and further connected to drains of the P-channel MOS transistors 18 and 15. Gates of the N-channel MOS transistors 23 and 24 are commonly connected to each other and further connected to the drain of the N-channel MOS transistor 23 and serves as an input terminal of the current mirror circuit 35. Also, sources of the N-channel MOS transistors 23 and 24 are commonly connected to each other and connected to the negative voltage power source VSS2 as the common terminal of the current mirror circuit 35. Sources of the N-channel MOS transistors 21 and 22 are commonly connected to each other and connected through a constant current source 25 to the negative voltage power source VSS2. Drains of the N-channel MOS transistors 21 and 22 are connected to the input terminals of the current mirror circuits 33 and 34, respectively. The input terminal of the current mirror circuit 33 is the node to which the gates of the P-channel MOS transistors 15 and 16 are commonly connected and connected to the drain of the P-channel MOS transistor 16. The sources of the P-channel MOS transistors 15 and 16 are commonly connected and connected to the positive voltage source VDD2 as the common terminal of the current mirror circuit 33. The input terminal of the current mirror circuit 34 is the node to which the gates of the P-channel MOS transistors 17 and 18 are commonly connected and connected to the drain of the P-channel MOS transistor 17. The sources of the P-channel MOS transistors 17 and 18 are commonly connected to each other and connected to the positive voltage source VDD2 as the common terminal of the current mirror circuit 34. The node where the drains of the P-channel MOS transistors 15 and 20 and N-channel MOS transistor 24 are commonly connected is the output terminal Vout2 of this differential amplifier (the driver circuit 1) and connected to the gate of the N-channel MOS transistor 5 in FIG. 1.
This circuit serves as the differential stage where the P-channel differential pair 31 and the N-channel differential pair 32 are combined. Thus, the output of the P-channel differential pair 31 and the output of the N-channel differential pair 32 are required to be added. For this reason, the respective drains of the transistors constituting the N-channel differential pair 32 are connected to the input terminals of the respective current mirror circuits 33 and 34. The currents outputted from the output terminals of the current mirror circuits 33 and 34 flow through the respective drains of the N-channel MOS transistors 24 and 23, and the outputs are added. Consequently, in case of the voltage range in which the P-channel differential pair 31 does not operate, the N-channel differential pair 32 operates. On the contrary, in case of the voltage range in which the N-channel differential pair 32 does not operate, the P-channel differential pair 31 operates. Thus, the differential stage operating in the whole voltage range is obtained.
In order to use such a driver circuit 1 so that the output stage of the operational amplifier circuit shown in FIG. 1 carries out the operation of the so-called class AB, an idling current is required to flow through the P-channel MOS transistor 3 and the N-channel MOS transistor 5. The current value is determined by the P-channel MOS transistor 2, the N-channel MOS transistor 4, the constant current sources 8 and 9 and the constant voltage sources 6 and 7, which constitute an operational point setting circuit. At this time, the voltages of the constant voltage sources 6 and 7 are set such that the respective drain currents of the P-channel MOS transistor 2 and N-channel MOS transistor 4 are equal to each other. That is, each drain current is a half of the current flowing out from the constant current source 8. At this time, the idling current of the P-channel MOS transistor 3 at the output stage is set by the constant voltage source 6 and the voltage between the gate and the source of the P-channel MOS transistor 2 biased by the current which is a half of the current of the constant current source 8.
Also, the current which flows out from the constant current source 8 flows through the P-channel MOS transistor 2 and the N-channel MOS transistor 4 into the constant current source 9. When the constant current values of the constant current sources 8 and 9 are different, the current corresponding to the difference flows in from the node between the constant current sources 8 and 9 or flows out from the node. Thus, it could be understood that when the constant current values of the constant current sources 8 and 9 are made equal to each other, the current does not flow into the output of the driver circuit 1. This fact is very important when the driver circuit 1 is configured from the circuit shown in FIG. 2 or 3. That is, it is supposed that the output current flows into the driver circuit 1 as shown in FIG. 2 or 3. Then, a differential offset voltage corresponding to the current is generated. Specifically, when a mutual conductance of the differential transistor is assumed to be gm and the current flowing to the output is assumed to be Iout, the differential offset voltage Vos is obtained from the following equation. Thus, in order to prevent the generation of the offset voltage, the constant current values of the constant current sources 8 and 9 are required to be equal to each other.Vos=Iout/gm
As mentioned above, the conventional circuit requires the current value matching performance between the constant current source 8 and the constant current source 9, in order to couple the amplifying circuit shown in FIG. 2 or 3 as the driver circuit of the differential amplifier shown in FIG. 1. However, when this differential amplifier is configured inside LSI, it is difficult to match the elements perfectly due to the deviation in the property between the respective elements. That is, the variation in the property between the respective elements causes the differential current between the constant current source 8 and the constant current source 9 to flow into the output terminal (the Vout1 in FIG. 2 and the Vout2 in FIG. 3) in the driver circuit 1. Thus, the offset voltage is generated.


According to an example aspect of the present invention, there is provided a method of information transmission in a system comprising at least one liquid handling device and at least one external device, the method comprising: in one or more of said at least one liquid handling device, producing a machine-readable code that contains information that is derived from a status or properties of the respective liquid handling device or information that has been stored in the respective liquid handling device; in said one or more of said at least one liquid handling device, displaying the respective code on a display that is integrated to a structure of the respective liquid handling device; reading the displayed code or one or more of the displayed codes by an external device.

Communication between an electronic handheld pipette and a user traditionally takes place via the buttons and the display of the pipette. The user inputs commands and performs programming actions, such as selection of parameters for aspiration and dispensing events, by pressing pipette buttons. As a response, the pipette displays information on the pipette display in the form of alphanumeric characters and graphic symbols. The user reads and interprets the characters and symbols visually.
The size, resolution and orientation of the pipette display, the pipette software, and the pipette memory size set limits to the type and amount of information that can be displayed and observed or read by the user. Thus, there is a need to improve information transmission between a pipette and its user.
It is known to use wireless techniques, such as RFID and NFC technology, for data transfer in a laboratory environment. The NFC technique is applicable within a distance of a few centimetres. Implementation of such technology to a laboratory device requires incorporation of additional components into the structure of the device, which increases costs. A further disadvantage of NFC-based solutions is that the laboratory device to be detected and communicated with must be selected by means of using a dedicated frequency.
There is a need for an improved method of communication between a liquid handling device and an external system or between a liquid handling device and its user in the course of pipetting and particularly in environments and contexts of manual pipetting or maintenance or servicing actions.
There is a need for a method of communication between a pipette and a user which can be implemented without any changes to the pipette hardware.

Method of information transmission, a liquid handling device, and a system