In a handwriting recognition process, a list of candidate recognized words is identified (202) as a function of both comparison of dictionary entries to various combinations of recognized character combinations, and through a most likely character string and most likely string of digits analysis as developed without reference to the dictionary. The process selects (301) a word from the list and presents (302) this word to the user. The user then has the option of displaying (303) this list. When displaying the list, candidate words developed with reference to the dictionary are displayed in segregated manner from the most likely character string words and the most likely string of digits. The user can charge the selected word by choosing from the list, or edit the selected word. When the user selects the most likely character string as the correct representation of the handwritten input to be recognized, the process automatically updates (310) the dictionary to include the most likely character string The same process can occur when the user selects the most likely string of digits.

So called personal digital assistants, such as the EO.TM. and Newton.TM. products, typically have a touch sensitive screen upon which a user can impose handwriting. These devices then function to digitize the handwritten character input. Other devices, which function to receive handwritten input include, but are not limited to the following: desktop computers, modems, pagers, advanced telephones, digital or interactive televisions, and other information processing devices having access to a digitizing tablet that can accept handwritten character input. Still other devices can receive handwritten character input by means of a facsimile or scanned input. .sub.-- These devices process the information to attempt to recognize the information content of the handwritten character input and display that information to the user for purposes of feedback and correction of errors in the processing and recognition of the handwritten character input.
Pursuant to another prior art approach, a dictionary is accessed and entries within the dictionary are compared against the initial handwriting analysis results. Using this approach, one seeks those entries within the dictionary that most closely fit the characteristics of the handwriting sample. For use with handwriting samples that represent information contained within the dictionary, this approach works reasonably well. Often, however, the handwriting input will not be in the dictionary. For example, proper names, geographic locations, acronyms, and professional jargon are typically not included within such dictionaries. Expanding the dictionary to include virtually all words and acronyms, on the other hand, presently constitutes an unsatisfactory solution, since the amount of memory required, and the computational overhead necessary to support a full search of such an extensive dictionary, all make this approach impractical.
Another problem associated with the prior art is the recognition of numeric handwritten input. Many numbers bear a strong resemblance to words that may be in the dictionary (for example, "15" may be easily confused with "is"). A dictionary based system will be unable to correctly identify "15" when written. Accordingly, a need exists for some method to allow this input to be identified correctly and presented to the user as a possible translation of the handwritten character input.
Another problem often associated with the prior art handwriting recognition techniques of the prior art is the format in which the digitized handwritten alphanumeric input is displayed to the user after the input has been analyzed. In particular, prior art methods for displaying the output are confusing when the output contains errors. In many cases, users cannot remember what they wrote and are unable to make sense of the errors in the output in order to correct them.
Accordingly, a need exists for a handwriting recognition technique that can avoid or minimize these limitations and at the same time present the information in a format which allows the user to correct any errors with direct reference to their intended handwritten input.

Combined dictionary based and likely character string method of handwriting recognition


An apparatus used to hold rolls of disposable paper such as toilet paper or paper towels is disclosed. The device includes a magnetic device of securing a cylindrical spindle between two lateral supports such that the paper roll may rotate freely around the spindle without falling off. One lateral support is adapted for limited rotation on a swivel mechanism and has attached to it the cylindrical spindle. This design facilitates easy loading of new paper rolls and unloading of used rolls. The device also includes a mounting plate for positioning on a wall or other structure. Finally, it may take on a variety of aesthetically pleasing forms while still retaining its useful features.

Devices are known in the art which hold rolled paper towels or toilet tissue on a cylindrical tube. The paper is typically rolled around a cardboard tube and the cylindrical tube provided by the device passes through this cardboard tube. These devices allow the rolled paper to rotate freely about the cylindrical tube without falling off. A well known method of achieving this result is to use a cylindrical tube which is telescopic and spring-loaded. This tube is then compressed to fit inside the cardboard tube of the rolled paper. The rolled paper is then fitted between two lateral supports and the spring-loaded cylindrical tube expands to fit against each of the supports, thereby holding the assembly in place while allowing the rolled paper to turn freely.
This method of attachment is awkward and often difficult to use. Installation of the rolled paper and removal of the empty cardboard tubes requires coordination and dexterity which may make these devices unusable for some. While this method of holding rolled paper is not without merit, it does not provide the ease and convenience of use of the present invention. The present invention relates to a holder for these rolled papers which includes a novel and convenient method of attachment. This new method of attachment causes the present invention to substantially depart from the prior art.


A process for the recovery of polymer-grade (meth)acrylic acid, in the absence of organic solvent, from a gaseous reaction mixture comprising (meth)acrylic acid obtained by gas-phase oxidation of a precursor of the (meth)acrylic acid, the process carried out in a plant comprising at least one dehydration column and one finishing column, being characterized by the presence of at least one chemical treatment agent targeted at reducing the content of residual aldehydes. (Meth)acrylic acid obtained according to the invention meets criteria of high quality allowing it to be used in the manufacture of acrylic polymers, in particular for superabsorbents. This grade is also known as glacial acrylic acid GAA.

Acrylic acid is intended essentially for use by industrialists of polymerization processes (or copolymerization processes in the presence of other polymerizable monomers), either of acrylic acid as is or of its derivatives in the form of salts (for example sodium acrylate), esters (alkyl acrylates) or amides (acrylamide). These processes are carried out under different forms, in bulk, in solution, in suspension or in emulsion.
The polymerization and/or copolymerization processes involving acrylic acid can be very sensitive to the presence in the feedstock of certain impurities, such as unsaturated compounds or aldehydes, which can sometimes prevent the expected usage value from being obtained, for example by limiting the conversion of the monomer into polymer, by limiting the chain length of the polymer, by causing crosslinking reactions or since they modify the reactivity of the reaction.
Some of these impurities, such as nonpolymerizable saturated compounds, can also be particularly troublesome in the final application of the polymer, since they modify the properties of the polymer, confer toxic or corrosive properties on the polymer or also increase polluting organic discharges during the stages of manufacture of the polymer and/or of the finished product.
Consequently, users of acrylic acid or of acrylic acid derivatives are demanding as regards quality specifications of acrylic acid. The latter has to meet strict thresholds as regards impurities.
In addition, these users employ formulations for the production of their polymers which are suited to a "standard" quality of acrylic acid or its derivatives. A modification to the formulations used by these users, for the purpose of adapting them to a different quality of acrylic acid, would exhibit major disadvantages for these user companies.
As the quality (or the purity) of the acrylic acid, that is to say its content of various impurities, plays a major role in polymerization processes, the industrialists who manufacture this acrylic acid have been led to deploy a whole series of purification stages in order to obtain this "standard" acrylic acid, which is normally referred to as polymer-grade acrylic acid or glacial acrylic acid (GAA). This GAA does not meet specifications which are recognized officially and which have a universal nature but signifies, for each industrialist, the level of purity to be achieved in order to be able to successfully carry out its polymerization in the acid form or in the form of a derivative and to obtain polymers compatible with their final uses.
The processes for the recovery/purification of acrylic acid described in the prior art are very complex when it is a matter of producing polymer-grade acrylic acid and exhibit numerous disadvantages.
This is because the processes for the synthesis of acrylic acid always result in a gaseous reaction medium consisting of a complex mixture of impurities, generally classified according to their property of being condensed to give a liquid mixture or of being absorbed in a liquid mixture, or classified according to their boiling point with respect to that of acrylic acid (light compounds or heavy compounds).
It follows that the purification processes normally use a combination of operations in order to separate and recover the acrylic acid present in this gaseous effluent.
Some of these operations employ one or more organic solvents as absorption agents (gas/liquid exchanges) and/or as agents for extraction into a liquid medium (liquid/liquid exchanges) and/or also as agents for separation by azeotropic distillation. These processes, which include in particular, in addition to the stages of separation of the desired product, treatment stages for recovery and purification of the solvents, necessarily involve a large number of distillation columns, resulting in a technical acrylic acid in which the content of impurities has been greatly reduced but which does not satisfy the specifications of a glacial acrylic acid necessary in order to obtain, for example, polymers of high molecular weight.
Other processes, such as, for example, that described in patent EP 2 066 613 B1, make it possible to simplify the recovery and the purification of acrylic acid by very significantly reducing the number of individual operations necessary for the purified product to be obtained. These processes are characterized in that they do not involve any addition of organic solvent external to the process and in that they use a restricted number of distillation columns, in particular less than three columns. These simplified processes make it possible to obtain a quality of technical acrylic acid of high purity, which can reach or exceed 99%, but still not sufficient for the most demanding applications of acrylic acid requiring polymers of high molecular weights, for which a quality of glacial (or polymer-grade) acrylic acid is required.
In order to achieve a quality of glacial acrylic acid, it is necessary to remove, up to a very exhaustive level (at most a few ppm), certain impurities still present in the technical acrylic acid obtained according to the abovementioned processes.
There are in particular certain aldehydes, such as furfuraldehyde, benzaldehyde and acrolein, or other impurities, such as protoanemonin, a heavy compound generated during the synthesis of acrylic acid, or also nonphenolic polymerization inhibitors, such as phenothiazine, liable to have been introduced during the synthesis of the (meth)acrylic acid.
These impurities can be removed by an additional treatment stage using fractional crystallization, as described, for example, in the documents U.S. Pat. No. 6,448,439 or EP 2 066 613 B1.
Fractional crystallization is a well known separation technique. It can be carried out in different forms: dynamic crystallization, static crystallization or suspension crystallization (U.S. Pat. Nos. 5,504,247; 5,831,124; 6,482,981).
However, the additional purification by fractional crystallization is expensive in capital costs and in energy required for the successive phases of cooling and heating.
For this reason, additional processes for purification by distillation are commonly used for the removal of the impurities from technical acrylic acid. However, this removal, down to extremely low contents of a few ppm, cannot be economically obtained by simple distillation, due, on the one hand, to their high concentrations with respect to the threshold of their sensitivity with regard to the polymerization reactivity and, on the other hand, to the volatility of some of these compounds, which is too close to that of acrylic acid.
In order to do this, industrialists generally use processes combining a purification by distillation and a chemical treatment using a reactant which forms, with the aldehydes, heavy reaction products which can be more easily separated from the acrylic acid by distillation.
Among the reactants which can be used, it is possible to employ, for example, amines, compounds of the family of the hydrazines or aminoguanidine, which are used as is or in the form of their salts, or as a mixture (U.S. Pat. No. 3,725,208; EP 270999; EP 685448).
The chemical treatments which are described in the prior art all exhibit the disadvantage of generating water during the reaction of the aldehydes with the reactant. The presence of water in the acrylic acid can also be damaging for the manufacture of certain polymers.
For this reason, provision has been made, in the document JP 49-95,920, to carry out this chemical treatment during a distillation stage targeted at removing the water and the light compounds at the top, before a stage of distillation of the acrylic acid intended to separate the heavy compounds.
In the purification process described in the document JP 2002 179627, the chemical treatment of the aldehydes is carried out in a static mixer.
These various techniques combining a purification of the acrylic acid of technical grade by distillation and chemical treatment of the aldehydes are described in particular for the purification of the technical acrylic acid obtained by conventional processes involving at least one external organic solvent. They have the disadvantage of requiring an additional purification section, with at least one additional distillation column equipped with its ancillary parts (reboiler, condenser, pumps, and the like), which has a negative impact on the cost of the industrial unit and also on the energy consumption.
In addition, the chemical treatment of the aldehydes is generally accompanied by the formation of solids which gradually accumulate and require frequent cleaning operations on the items of equipment, negatively impacting the productivity of the plant.
According to the process for the purification of acrylic acid described in patent EP 1110940 of Nippon Shokubai, it is necessary to adjust the ratio of concentration of furfural to acrolein by weight present in the acrylic acid to be treated to between 3 and 100, so as to improve the effectiveness of the treatment for the removal of aldehydes by a chemical agent of hydrazine type. Under these conditions, the amount of chemical agent to be introduced is reduced and the formation of polymers is limited.
A need thus remains to have available a process for the recovery/purification of acrylic acid resulting in a quality of acrylic acid of polymer (or glacial) grade which is simplified, fast and easy to carry out (comprising as few stages as possible), which does not require the involvement of organic and/or azeotropic solvent, or of technology which is expensive in energy or polluting, and which in addition does not result in the formation of polymers which foul the items of equipment.
The inventors have now discovered that this need could be met by employing a section for purification of an acrylic acid gaseous reaction mixture without addition of external organic solvent and without treatment by crystallization, in particular in a plant comprising a dehydration column and a finishing column (or purification column) fed with a portion of the bottom stream from the dehydration column, and including a stage of treatment of the aldehydes using a chemical agent preferably carried out inside the abovementioned purification section, or alternatively in an additional purification section using distillation, making it possible to result directly in a glacial acrylic acid quality.
Furthermore, it is apparent to the inventors that this invention could be applied to the acrylic acid and to the methacrylic acid which are produced from different sources, and also to these acids derived from renewable starting materials, which are liable to present the same problems of purification.

Process for producing polymer-grade (meth)acrylic acid


In an NVMe-based storage system, a host is connected to an NVMe controller through a PCIe bus, and the NVMe controller is connected to a storage medium. The NVMe controller receives from the host a data packet that carries payload data and an association identifier. The association identifier associates the payload data with a write instruction. The NVMe controller obtains the write instruction according to the association identifier, and then writes the payload data into the storage medium according to the write instruction.

With development of storage technologies, especially in a solid state drive (SSD) using a flash memory (Flash) as a storage medium, a serial advanced technology attachment (SATA) interface standard and a serial ATA advanced host controller interface (AHCI) standard that are designed for a conventional mechanical hard disk cannot meet requirements of storage devices. This becomes a bottleneck limiting a processing capability of the storage device. A standard about non-volatile memory express (NVMe) rises to the occasion. The NVMe interface allows a host (Host) to communicate with a non-volatile memory (NVM) subsystem. The interface used by the NVM subsystem (including a controller and a storage medium) for communication is attached to a peripheral component interconnect express (PCIe) bus interface as a register interface, to optimize enterprise-level solid-state storage and consumer-level solid-state storage, such that the storage has advantages such as high performance and a low access latency.
The NVMe interface is based on a paired submission queue (SQ) and completion queue (CQ) mechanism. A command is placed by a host in a submission queue. Completion information is placed by a controller in a corresponding completion queue. Each submission queue entry (SQE) is a command. In a write instruction, a memory address used for data transmission is specified by using a physical region page (PRP) or a scatter/gather list (SGL). After obtaining the write instruction, the NVMe performs a PCIe read operation to read to-be-written data from storage space indicated by the memory address used for data transmission, and writes the to-be-written data into a storage medium.

NVMe-based data writing method, apparatus, and system


The invention provides anti-B7-H4 antibodies and immunoconjugates and methods of using the same.

B7-H4 is a Type I transmembrane protein and is a member of the B7 superfamily of proteins that provides co-signal in conjunction with a T-cell receptor antigenic signal. B7-H4 is a negative regulator of T-cell function and ligation of T-cells inhibits their growth, cytokine secretion and cytotoxicity. Elimination of B7-H4 in mice does not affect immune cell homeostasis and no signs of autoimmunity. Zhu et al., Blood, 113(8): 1759-1767 (2009); Suh et al., Molecular and Cellular Biology, 26(17): 6403-6411 (2006). The receptor for B7-H4 is unknown and unidentified.
Human B7-H4 is a 282 amino acid protein (including the amino-terminal signal sequence), of which ˜227 amino acids are predicted to be in the extracellular space following cleavage of the amino-terminal signal sequence. B7-H4 comprises an Ig-like V-domain, an Ig-like C domain, a transmembrane domain and a short cytoplasmic tail.
There is a need in the art for agents that target B7-H4 for the diagnosis and treatment of B7-H4-associated conditions, such as cancer. The invention fulfills that need and provides other benefits.

Anti-B7-H4 antibodies and immunoconjugates


An electrical connector includes a housing having a forward mating end and a rearward contact loading end. The housing includes first and second opposite sides. The housing is configured for insertion into a panel opening that has an inner edge. The housing is inserted into the panel opening in a first direction in an insertion position and is movable within the panel opening in a second direction substantially perpendicular to the first direction from the insertion position to a latched position. A latch member extends from the first side of the housing and has first and second ends attached to first and second opposite ends of the first side of the housing. An arcuate latch beam joins the first and second ends of the latch member, and a latch element positioned on a forward facing surface of the latch beam engages the inner edge of the panel opening to hold the housing in the latched position.

The invention relates generally to electrical connectors, and more particularly, to a panel mount connector having a latch mechanism that provides for mounting of the connector without hardware.
In general, an electrical cable includes one or more conductors, which may be wire conductors, that are surrounded by insulation. Networked electronic systems often include a number of devices communicating with other devices through a number of associated electrical cables with electrical connectors. Typically, one device is connected to another device or system through a single conductor or multiple conductors that are terminated with contacts in a connector housing. To terminate the conductors to the connector contacts, wire insulation is removed from an end of the cable to expose the conductors therein. The conductors are placed into the contacts of the connector and the conductors are attached thereto, such as with crimping or soldering techniques.
It is common to utilize a backshell on an electrical connector to protect the conductors of the electrical cable which are connected to the contacts in the connector. The backshell covers the contact tails to prevent someone or something from inadvertently touching the energized contacts. The backshell may also provide strain relief for the cable so that excessive forces applied to the cable will not cause the cable conductors to become disconnected from the contacts in the connector housing.
In at least some electronic systems, the electrical connectors are mounted to a connector panel for mating with a complementary mating connector. The connectors are mounted to the connector panel using a variety of methods such as brackets, clamps, or threaded bolts or other fasteners. With the continuously increasing demand for resources in today's systems, connector space on the connector panels is in short supply. In many instances, due to space limitations, system operators limit the amount of connector space available for each application. In addition to the size of the connectors and backshells themselves, features that may be provided for particular mounting arrangements may also contribute to space shortages on the connector panel by increasing the space required between connectors. For example, U.S. Pat. No. 6,095,854 describes a panel mounting system for a connector that includes a side mounted latch that is enclosed in a protective shroud to protect the latch from breakage. As another example, U.S. Pat. No. 6,312,285 describes a panel mounting system that includes a latch mechanism on the top of the connector that almost doubles the height of the connector.
A need remains for a connector assembly that has a smaller footprint to facilitate saving space on the connector panels. It would be further desirable to provide a connector assembly that is mountable to the panel without the need for tools or mounting hardware.


A voltage transforming apparatus for receiving a system input voltage and generating a system output voltage is disclosed herein. The voltage transforming apparatus includes the following devices. Transforming device that is to generate module output voltage responsive to the rate of change of the magnetic flux induced by the system input voltage. The voltage transforming device including a first terminal having a first voltage and a second terminal having a second voltage. The first voltage is higher than the second voltage, and the output voltage of the voltage transforming device is generated responsive to the difference between the first voltage and the second voltage. The voltage transforming device is mechanically connected to prevent the movement. Coupling device for electrically coupling the voltage transforming device to form a serial connected voltage transforming device. The serial connected voltage transforming device including a top voltage transforming device and a bottom voltage transforming device. The difference of the voltage level of the first terminal of the top voltage transforming device and the second terminal of the bottom voltage transforming device is equal to the system output voltage. In the serial connected voltage transforming device, the first terminal of one voltage transforming device is connected to the second terminal of the other voltage transforming device.

The principle of the operation of the voltage transformer is shown in FIG. 1, which depicts two coils wound on the same core. The power supply 100 and core 103 are connected by the first coil, namely, primary winding 104. Similarly, the load 105 and the core 103 are connected by the second coil, namely, secondary winding 106. The voltage of the power supply 100 on the terminal a.sub.1 and b.sub.1 is v.sub.1, and the current flowing into the primary winding 104 is the primary current i.sub.1. The terminals of the secondary winding 106 are a.sub.2 and b.sub.2.
The primary current i.sub.1 in the core 103 induces the magnetic flux .phi., and then the secondary current i.sub.2 is induced by the magnetic flux .phi. in the secondary winding 106. Finally, the secondary current flows into the secondary winding 106, and the voltage drop between terminal a.sub.2 and b.sub.2 is thus produced. Assuming that the magnetic flux .phi. passes through an N-turn coil, an induced voltage, denoted v.sub.2, is related to the rate of change of the magnetic flux by v.sub.2 =N.sub.2 (d .phi./dt) and ignoring the energy loss in the core, the equation N.sub.1 i.sub.1 =N.sub.2 i.sub.2 is obtained. Thus, the principle of energy conservation there will be an equation i.sub.1 v.sub.1 =i.sub.2 v.sub.2 and the voltage drop between the terminals a.sub.2 and b.sub.2, denoted v.sub.2, related to the voltage drop between the terminals a.sub.1 and b.sub.1, is by equation (1), wherein: EQU (V.sub.1 /V.sub.2)=(N.sub.1 /N.sub.2) (1)
According to equation (1), the design and the manufacturing of the primary winding and the secondary winding must take the turn ratio (N.sub.1 /N.sub.2) into account. According to the structure of solenoidal winding used in the traditional transformer, the process for manufacturing the voltage transformer could become more complex when the high voltage transformer is considered because the number of turns in each coil is very large. Furthermore, the special design of the insulation between the layers of the coils must be considered. Due to the reason mentioned above, the manufacturing and the design of the traditional high voltage transformer are very complicated. In some application, the multiple circuit is used to raise the output voltage of the voltage transformer, and the configuration of the multiple circuit is shown in FIG. 2. The output voltage of the secondary side T.sub.xs is assumed to be V.sub.M, and the output voltage V.sub.M is fed into the multiple circuit to amplify the output voltage in every stage from the multiple circuit. Then, the output voltage of every stage of the multiple circuit can be fed into another voltage transformer to further increase the output voltage in high-power application.
In the case of switching-power-supply application, the frequency is usually between 100 kHz and 200 kHz, so the effect of the distributed capacitance must be considered carefully in the traditional high voltage transformer. In addition, the volume of the modern electronic device is shrunk to fit the need of the modern application, so the volume of the voltage transformer used in the power supply must be reduced too. Thus, the switching frequency of the power supply is increased, and the reduction of the volume of the transformer is then enabled. Furthermore, when the switching frequency is low, it is not important to ignore the parasitic effect because it is not obvious. Whereas, when the switching power is high, the consideration of the parasitic effect of the components of the transformer is critical, and the poor efficiency of the transformer as well as the modification of the feedback circuit of the transformer are very complicated.
In addition, the components used in the traditional voltage transformer are all specially designed. For example, rectifier and capacitor-use filter in high-power application must be utilized in high voltage transformer. So they are suitable to be used under high component stress. Due to the specialty, the source of the specially designed components have been a problem, and the high voltage transformer is thus very expensive.

Serial-modulized high voltage transformer

Industrial Technology Research Institute


An article of manufacture includes an object having an airfoil core shape. The airfoil core shape has a nominal profile substantially in accordance with Cartesian coordinate values of X, Y, and Z set forth in TABLE 1 where X and Y are distances in inches which, when connected by smooth continuing arcs, define airfoil profile sections at each distance Z in inches. The profile sections at the Z distances are joined smoothly with one another to form a complete airfoil core shape.

The present invention relates to the art of gas turbines and, more particularly, to an airfoil core shape for a turbine nozzle for a gas turbine.
Many system requirements must be met for each stage of a hot gas path section of a gas turbine in order to meet design goals including an overall improvement in efficiency and airfoil loading. In particular, a stage-one nozzle must meet system requirements including cooling flow and part life. The stage-one nozzle also has a particular set of boundary conditions based on operating conditions of the gas turbine. The nozzle core shape must meet design specifications and also be capable of efficient manufacture.


A paint roller includes a handle rotatably supporting an inner clamping roller, an outer covering roller disposed about and spaced from the inner clamping roller, and a covering material carried by the outer covering roller. A padded layer is disposed between the outer covering roller and the covering material. The outer covering roller has longitudinal ends, and the covering material has longitudinal end sections which extend over the longitudinal ends of the outer covering roller and which are disposed in the space between the inner clamping roller and the outer covering roller.

The invention relates to a basket roller for a paint roller with a cylindrical support for a covering of plush fabric or the like, the inner cylindrical opening of which is engaged by a bearing leg of an angled handle part wedged and supported with its bearing parts at the inner wall.
In their standard constructions, basket rollers are constructed so that two disks are rotatably mounted at a distance from one another on the bearing leg of the handle part. Such disks are connected together by means of bent spring clips protruding over the outer peripheral areas of the disks. The spring clips can be compressed while being inserted in the inner opening of the cylindrical support and are then jammed in the selected insertion position against the inner wall. This enables the basket roller to be assembled and disassembled very easily. In a modified embodiment, the bent spring clips are omitted and the disks are constructed instead as slotted clamping sleeves, which in turn are jammed against the interior side of the inner opening of the cylindrical support.
Such basket rollers have not previously been obtainable in a padded form, since it created insurmountable difficulties previously to fix the covering ends in a suitable manner when padding was disposed between the cylindrical support and the covering. In the absence of an intermediate padding layer, the covering can be glued to the support, so that the problem of fixing the ends of the covering to the support ends does not arise. If the underside of the covering is lined with a padded layer, which is desirable and, in many cases, even necessary for painting rough plaster in order to be able to bring the paint also into appropriate depressions and also to be able to catch it at elevations, about which paint is not applied when the roller is not padded, it is already known for other types of roller mountings to have the plush covering overlap the ends and pulled into the roller and fixed there. In the case of the conventional basket rollers having a cylindrical supporting sleeve, this pulling in of the overhanging end sections of the plush covering and their clamping by appropriate spring clips fails because, in the case of such a constriction of the internal diameter at the ends, the bearing basket either can no longer be pushed in or cannot be jammed and supported adequately in the interior in the region of the enlarged diameter. In the case of the second of the embodiments, addressed above, namely, the embodiment without the bent spring clips, this pulling in of the ends of the plush covering ends fails because, during the disassembly, the spring clips time and again pull out the plush covering, even when the latter has been glued in.


This invention relates to a gas scrubber and methods of disposing a gas by using same. The gas produced during the manufacturing of the semiconductor is supplied to a burner through a gas intake tube. Initial purification process occurs when flammable and harmful components of the gas are burned in the burner. The gas initially is treated in the burner and then flows into the adsorbent device. A multiple layers of catalytic adsorbent materials are placed in an adsorbent device to physically and chemically treat the gas. The gas is distributed in order from the bottom the catalytic adsorbent materials to the top level. Depending upon a pressure difference between the supplied gas and discharged gas, or the density of harmful components within the discharged gas, the gas is distributed to pass through next catalytic adsorbent materials.

Generally, for manufacturing of semiconductor device, the gases leaving harmful, flammable, corrosive properties are used. For example, in process for manufacturing the semiconductor device such as Chemical Vapor Deposition (CVD), Low Pressure CVD, Plasma CVD, Plasma Corrosion, and Epitaxy CVD, gas materials such as SiH.sub.4, SiH.sub.2 Cl.sub.2, 4NHl.sub.3, NO, AsH.sub.3, PH.sub.3, B.sub.2 H.sub.6 are a little utilized. Also, a gas exhausted from the device, which carries out the processes, contains a high degree of the toxic components such as harmful, flammable, corrosive properties. Therefore, in order to prevent environmental pollution due to a leakage of the gas materials to atmosphere, it is generally regulated to purify the exhaust gas by the law, before the exhaust gas is exhausted to atmosphere.
There are three methods to dispose the toxic gases produced during manufacturing of the semiconductor device: First method is disposing of flammable toxic components contained in the exhaust gas, which are generally composed of hydrogen gas, by burning the flammable components at high temperature of 500.degree. C. or 800.degree. C. in a burning chamber. Second method is disposing a water-soluble toxic components contained in the exhaust gas by using the wetting method in which the water-soluble toxic components are decomposed while they pass through water stored in the bath. Final method is to remove from the exhaust gas by adsorbing the toxic components contained in the exhaust gas, which cannot be burned or melted, using adsorbents, in which the toxic components are decomposed physically and chemically when they are passing through the adsorbents.
When the burning method is used for disposing the toxic components contained in the exhaust gas, silane contained in the exhaust gas may be burned with oxygen in air, so that Silicon Dioxide is created. Unfortunately such Silicon Dioxide causes following problems: First, the Silicon Dioxide particle could be formed as a result of a gas phase reaction which could clog up gas passages in the burner and in some instances it could cause some troubles in the burning system. Secondly, the Silicon Dioxide is generally collected through a washing process and then water used in the washing process must be treated to completely remove any remaining of chemical particles or other contaminated materials before disposal.
On the other hand, the wetting method has two ways, one being a wet chemical solution which is used to dispose the toxic components contained in the exhaust gas that are water soluble, and the other being a dry chemical solution which is used to dispose them that are non-water soluble material could be dissolved chemically.
However, even tough wetting method is effective in treating the gas produced during the manufacturing of the semiconductor device, it has been less preferred because of the used water or the chemical solution must be cleaned before discharged from a factory corresponding to tendency of gradually strengthen a water pollution regulation world-widely.
Also, the adsorbent method has a problem that the adsorbent must be frequently replaced with new adsorbent because gas passages provided in the agglutinated particles of the adsorbent are clogged with the adsorbed toxic components when the gas is treated by the adsorbent. This causes decrease in the gas flowing rate of the gas that passes through the adsorbent particles.
To overcome the problems set forth above, Delatech Inc, Napa, Calif., U.S., developed CDO.TM. system, as illustrated in FIG. 1, that uses burning method, wetting method, and adsorbent method to dispose the gases that was generated during the manufacturing of the semiconductor device. Followings are the description of how system works.
If the exhaust gas such as gas and/or vapor is entered into the oxidation section 202 of the CDO.TM. system in which an air (O.sub.2) is injected in about pressure of 60 psi into by an air supply nozzle 209, therefore the gas and/or the vapor is mixed with pressured air in the oxidation section 202. Then, mixture of processed exhaust gas and the pressured air flows into the thermal reaction section 203 where thermal/oxidation reaction occurs. In the thermal reactron section 203, the mixtures of the gas and pressured air are heated at the temperature of 650.degree. C. or 900.degree. C. by the cylinder shape of the heater elements 208, in which is provided inconel tubes 210 that was formed by casting an alloy consisting of Fe, Ni, and Cr.
To prevent the mixture of the processed exhaust gas/air from being ignited by heating, N.sub.2 gas is injected at the pressure of 2psi into top of the thermal reaction section 203 when the temperature therein reaches 650.degree. C. by the heater elements 208.
For example, in the thermal reaction section 203, the components such gases as SiH.sub.4, SiH.sub.2 Cl.sub.2, 4NH.sub.3, AsH.sub.3, PH.sub.3, B.sub.2 H.sub.6, and WF.sub.6 contained in the exhaust gas are purified through following heat reactions: ##STR1##
The oxidation nozzle assembly provided in the thermal reaction section 203 is designed to mix the pressured air injected from the air supply nozzle 209 located at the entrance of the thermal reaction section 203 with the exhaust gas. This design controls the location where terminal reaction begins, reduce and/or eliminate particles buildup the air supply nozzle 209, and increase the life of the air supply nozzle 209. The controlled oxygen surrounding is kept at high temperature and enhances heat reaction while it creates effective reactionary mixture. These features enhance the possibility that flammable and toxic gas and vapor will be completely reacted in a contained, controlled manner.
The thermal reaction section 203 as above described is made up of high temperature heater elements 208 isolated from the reactive gas mixture by the inconel tubes 210. The heater elements 208 are a thermocouple that is being controlled to maintain minimum temperature of the thermal reaction section 203.
The reacted gas as above described is then flows into first and second cooling and scrubbing sections 204, 205 by water injected from the water spray nozzles 206, 207, respectively. In the first cooling and scrubbing section 204, the particles, water-soluble components and vapor are removed from the exhaust gas while the gas is cooled at a low temperature, and mixed with water to dissolve water-soluble element. Remaining non-water-soluble toxic components of the exhaust gas are eliminated by the adsorbent 211 provided in the second cooling and scrubbing sections 205 while passing through the second cooling and scrubbing sections 205.
The water, which contains the water-soluble and the adsorbed components, is drained through the drain hole 212 that is located at the bottom of the second cooling and scrubbing section, 205. The drain flow sensor 213 attached at the drain hole 212, senses a water level when it reaches a certain point due to a blockage of the drain hole 212 caused by the water mixture, then closes the water spray nozzle 206, 207 by opening an electric circuit.
However, in CDO.TM. system, because moisture is existed in a boundary between the thermal reaction section 203 and the first cooling and scrubbing section 204, and the particles from the thermal reaction section 203 are mixed with this moisture, then a particle agglomeration is formed therein. This particle agglomeration becomes a blockage of passages in the boundary between the thermal reaction section 203 and the first cooling and scrubbing section 204, which interfere with the gas flow from the thermal reaction section 203 to the first cooling and scrubbing section 204. This will cause a breakdown of the system and as a result shorten the life span of the system.
Moreover, the cost of the system is expensive due to the complexity of the system since it removes the harmful components of the gas by injecting a prescribed pressure of nitrogen, air, and water.
Another inherent problem of above mentioned system is that since the system uses the wetting method, there is a problem of treating water which containing toxic and flammable components, and the chemical adsorbents before releasing from the factory.
Accordingly, an object of present invention is to provided a gas scrubber which can effectively dispose the harmful gas generated during the manufacturing of the semiconductor device as well as is relatively inexpensive gas scrubber since a construction of the system and methods of disposing the gas using the gas scrubber are much simpler.
Another object of the invention is to provide a gas scrubber which can remove clustered harmful particles in much simpler manner and prevent the breakdown of the system due to harmful particles beforehand, thus can be increased the life span of the system, and the methods of disposing the gas using the scrubber.
Further object of the invention is to provide the gas scrubber which can utilize an installation space by placing both burning and adsorption equipment in one case, thus make it compact and light weight, and method of disposing the gas using the scrubber.

Gas scrubber and methods of disposing a gas using the same


A connection assembly for vehicle engine coolant circuits, wherein a tubular multiway distributing element presents respective tubular appendixes fitted with the end portion of a branch pipe. The pipe and tubular appendix are made integral by means of a tubular coupling molded in one piece on the end portion of the pipe, on a relatively small portion connecting with the appendix.

The present invention relates to a connection assembly or vehicle engine coolant circuits.
Known circuits of the aforementioned type usually feature rubber hoses, the end portions of which are connected firmly to connecting assembly branches of the cooling system by means of metal clamps.
Connections of the aforementioned type present several major drawbacks: eventual aging of the hoses results in a loss of elasticity, in turn accompanied by a variation in the hose section, and in cracking so that the pressure exerted by the clamp is no longer sufficient for ensuring fluidtight sealing between the hose and the distributing element.
The presence of acid vapors, combined with the high temperature inside the engine compartment of the vehicle, results in corrosion and possible damage of the clamps, thus further impairing sealing performance.

Connection assembly for vehicle engine coolant circuits

Fabbrica Italiana Serrature Torino S.p.A.


There are disclosed a cylindrical member, constituting the main body of an electrophotographic photosensitive drum or a developing sleeve adapted for use in an image forming apparatus such as electrophotographic copying machine, laser beam printer, facsimile or printer, and a producing method therefor. A work obtained by cutting a tube, is worked to a predetermined internal diameter at the left-hand end, and is supported by an opening collet of the left arbor, while the other end is supported by a closing collet of the right arbor. A cutting tool holder, supporting a rough cutting tool and a finish cutting tool, rotates around the work at a high speed, and the work is moved axially by the table. Thus, the rough cutting tool and the finish cutting tool move in the axial direction of the work while rotating along the external curved surface thereof, thus cutting the surface.

1. Field of the Invention
The present invention relates to a cylindrical member constituting a main body of a photosensitive drum, a developing sleeve or the like, adapted for use in an electrophotographic image forming apparatus such as a copying machine, a laser beam printer, a facsimile apparatus, a printing apparatus employing electrophotographic process, and also to a method for producing the same.
2. Related Background Art
The photosensitive drum or developing sleeve employed in the electrophotographic image forming apparatus such as copying machine, laser beam printer, facsimile apparatus, printing apparatus or the like has conventionally been based on a cylindrical member which is finished to a predetermined surface roughness. The electrophotographic photosensitive drum is produced by applying a photosensitive film onto the surface of such cylindrical member finished to a predetermined surface roughness, so that a deficiency in the surface precision or dimensional precision of the cylindrical member results in surface irregularity of the photo-sensitive film, causing a defect in the image formed by the image forming apparatus. Consequently, for producing an image forming apparatus of a high accuracy, there is required a cylindrical member which is extremely accurate in the straightness and roundness.
A cylindrical member of high surface precision, straightness and roundness is required also for the developing sleeve which is used, in developing a latent image formed on the photosensitive film by an electrophotographic process or an electrostatic recording process, for supporting and transporting developer of various types, such as one-component, two-component, magnetic, non-magnetic, insulating or dielectric developer.
The cylindrical member for such electrophotographic photosensitive drum or developing sleeve is generally composed of Al of a purity of 99.5% or higher, or an aluminum alloy such as a Cu-Al alloy containing Cu in 0.05 to 0.20%, a Cu-Mn-Al alloy containing Cu in 0.05 to 0.20% and Mn in 1.0 to 1.5%, a Si-Mg-Al alloy containing Si in 0.20 to 0.60% and Mg in 0.45 to 0.90%, or a Mn-Al alloy containing Mn in 1.0 to 1.5%. For producing the above-mentioned cylindrical member with such material, there have been developed, for example, a method of preparing a tube of high surface precision and dimensional precision by highly precise extrusion, drawing and bending correction, cutting the tube by a desired length and finishing the internal surface of both ends by cutting, and a method of cutting a pipe, prepared by extrusion and/or drawing, by a desired length, cutting the internal surface of both ends and finishing the curved surface by a cutting tool (Japanese Patent Laid-open Application No. 2-110570).
However, in such conventional technologies, the former method preparing a pipe of high surface precision and dimensional precision by extrusion, drawing and bending correction, then cutting the pipe by a desired length and cutting the internal surface of both ends is associated with a high manufacturing cost of the pipe member, because highly precise control is required in the steps of bending correction or the like. Also, the later method of cutting a pipe of low cost, prepared by extrusion and/or drawing, and rotating the cut pipe (hereinafter called "work") to finish the curved surface, tends to result in vibration of the work when it is rotated at a high speed in the cutting step, because of unevenness in thickness of the work, deficient straightness of the work or insufficient precision of the internal diameter at both ends. For this reason, the revolution of the work has to be limited to about 3,000 rpm, so that it is difficult to shorten the time required for the cutting step. Besides, the motor has to be stopped when the work is attached to or detached from the cutting machine, and there is required a long waiting time for the starting-up of motor in each working cycle of the work. As a result, the entire process cycle time becomes longer, and the manufacturing cost becomes inevitably higher.

Cylindrical member and method for producing the same


A duplexer and a communication apparatus incorporating the same which are suitable for use in communication systems with wide frequency bands and narrow separations, and which can be miniaturized while having satisfactory characteristics. The duplexer has a transmission filter constituted of a variable frequency filter in which PIN diodes are connected to dielectric resonators and a reception filter constituted of two surface acoustic wave filters and a switching circuit. In the transmission filter, one of the higher and lower sides of a transmission frequency band can be selected according to a voltage applied to a first voltage control terminal. In addition, in the reception filter, one of the two surface acoustic wave filters can be selected according to a voltage applied to a second voltage control terminal.

1. Field of the Invention
The present invention relates to duplexers suitable for use in high frequency bands such as a microwave band, and the invention also relates to communication apparatuses incorporating the same.
2. Description of the Related Art
Recently, with a rapid expansion in miniaturization of mobile communication apparatuses such as cellular phones, there has been a growing demand for miniaturization of duplexers incorporated in the mobile communication apparatuses.
A conventional type of duplexer uses variable frequency filters as a transmission filter and a reception filter. In this case, each of the variable frequency filters has a structure in which dielectric resonators are connected to variable impedance elements such as PIN diodes via reactance elements such as capacitors. With this structure, resonant frequencies can be varied by controlling voltages applied to the variable impedance elements. In addition, in the duplexer incorporating the variable frequency filters, the size of the duplexer is reduced by decreasing the number of the dielectric resonators of the transmission filter and the reception filter.
However, when variable frequency filters are used both as the transmission filter and the reception filter in the duplexer, although miniaturization of the duplexer can be achieved to some extent, there is still a limit to the miniaturization, since dielectric resonators are used both in the transmission filter and the reception filter. Specifically, since the dielectric resonators need to have certain lengths for use at the intended frequencies, it is difficult to miniaturize the duplexer.
Meanwhile, in duplexers disclosed in Japanese Unexamined Patent Application Publication No. 5-95204 and Japanese Unexamined Patent Application Publication No. 5-175879, dielectric filters are used in the transmission filters and surface acoustic wave filters are used in the reception filters. In such duplexers, the surface acoustic wave filters used in the reception filters are smaller than dielectric filters. Thus, the sizes of the duplexers are reduced.
By using surface acoustic wave filters as both the reception filters and the transmission filters, the duplexers could be made smaller. However, usually, since a surface acoustic wave filter has a power rating lower than that of a dielectric filter, it would be difficult to use such a surface acoustic wave filter as a transmission filter, which receives a large amount of electrical power.
In addition, in the Japanese cdma-One cellular phone system, transmission frequencies are allocated in a range of 887 to 925 MHZ, and reception frequencies are allocated in a range of 832 to 870 MHZ. That is, the width of each of the transmission and reception frequency bands is 38 MHZ, which is relatively broad, and the separation bandwidth between the transmission side and the reception side frequencies is 17 MHZ, which is relatively narrow.
In the duplexers of Japanese Unexamined Patent Application Publication No. 5-95204 and Japanese Unexamined Patent Application Publication No. 5-175879, the surface acoustic wave filters are used in the reception filters, and can be miniaturized to some extent. However, due to characteristics of the surface acoustic wave filters, it is difficult to apply the surface acoustic wave filters in broad band applications such as the cdma-One system. Furthermore, even if the bandwidth of the surface acoustic wave filter could be broadened, it would be difficult to obtain a large amount of attenuation, and it would also be difficult to perform phase synthesis with the transmission filter, that is, it would be difficult to provide zero impedance in the transmission frequency band. As a result, particularly, transmission characteristics would be deteriorated.
Accordingly, it is an object of the present invention to provide a compact duplexer suitable for use in communication systems of broad bandwidths with narrow separations, while having good characteristics. It is another object of the present invention to provide a communication apparatus incorporating the duplexer.
According to a first aspect of the present invention, there is provided a duplexer including a first filter having a variable frequency filter formed by connecting a variable impedance element to a dielectric resonator, and a second filter having a plurality of surface acoustic wave filters with mutually different frequency pass bands and a switching circuit for selecting one of the plurality of surface acoustic wave filters.
In this duplexer, one of a plurality of frequency bands can be selected, in the first filter, by controlling the variable impedance element; and in the second filter, by selecting one of the surface acoustic wave filters having different pass bands via the switching circuit.
In this case, the switching circuit may be connected either to the inputs of the surface acoustic wave filters or to both the inputs and outputs thereof.
With the above arrangement, each of the first and second filters can be adapted to the frequency of the counterpart filter by switching the frequency passbands of the first and second filters, respectively. In other words, in effect, the transmission frequency band and the reception frequency band are both narrowed and the separation between both bands is broadened. Thus, narrow band surface acoustic wave filters can be used. As a result, a duplexer having a sufficient amount of attenuation and satisfactory characteristics can be obtained.
Furthermore, by using the switching circuit to select one of the plurality of surface acoustic wave filters, the transmission and reception frequency bands are both narrowed, whereby phase synthesis with the counterpart filter can be easily and satisfactorily performed. In addition, since deterioration of transmission characteristics and reception characteristics due to mismatching of phase synthesis can be prevented, satisfactory transmission/reception characteristics can be obtained.
That is, since the variable frequency filter is used in the first filter and surface acoustic wave filters are used in the second filter, miniaturization of the duplexer can be achieved and characteristics suitable for use in the communication system with broad band width and narrow separation can be obtained.
The plurality of surface acoustic wave filters used in the duplexer according to the present invention include not only surface acoustic wave filters with entirely different frequency pass bands but also surface acoustic wave filters with frequency pass bands that partially overlap within the overall range of the frequency pass bands.
In addition, generally, it is preferable to use a filter including dielectric resonators, which has a high power rating, as the transmission filter to which is applied high power, and a filter including surface acoustic wave filters, which has a low power rating, as the reception filter which receives low-power signals.
In addition, the first filter may be formed as a band elimination filter, and the second filter may be formed as a band pass filter. A PIN diode may be used as the variable impedance element of the first filter, and a switching circuit formed by a PIN diode or a GaAs switch may be used as the switching circuit of the second filter.
Furthermore, the first and second filters may be disposed together on the same substrate to be integrated with each other. As a result, easy handling can be achieved, and stable and satisfactory characteristics can be obtained.
According to a second aspect of the present invention, there is provided a communication apparatus including the dielectric filter or the duplexer having the characteristics described above. Thus, the communication apparatus can be compact and can have satisfactory characteristics.
Other features and advantages of the present invention will become apparent from the following description of the invention which refers to the accompanying drawings.

Duplexer and communication apparatus with first and second filters, the second filter having plural switch selectable saw filters


A mobile communications network comprising a plurality of nodes, each node being disposed on a vehicle, wherein the plurality of nodes are configured to be connected to any one or more of a plurality of mobile devices, and the mobile communications network further comprising a planning and control module configured to:                receive or obtain first location data representative of a first location of at least one of the plurality of mobile devices and receive, periodically or otherwise, respective updated location data representative of the current location of the respective mobile devices;        receive, periodically or otherwise, second data from each of the nodes, the second data being representative of the respective coverage capability of the nodes;        receive data representative of a coverage requirement associated with a specified one or more of the mobile devices; and        generate, using the updated location data and the second data, an output to cause the coverage capability of one or more of the nodes to be adjusted to meet the coverage requirement.

Standards for high-speed wireless communication for mobile phones and data terminals are known, and an example of such a standard is known in the art as Long-Term Evolution (LTE). One of the main drivers for the use of standards such as LTE is the high data rates that can be achieved. However, all technologies suffer from reduced data rates at the cell edge where signal levels are lower and interference levels are typically higher.
A communications (e.g. LTE) network conventionally comprises a plurality of base stations, typically provided in the form of static masts, which can communicate with each other and communicate directly with the core network. Mobile devices (user equipment or UEs) can connect to the network and, as the user moves through the coverage area, the base stations manage the radio resource and mobility within the coverage area to optimise all of the UE's communication in a flat radio network structure.
However, it is becoming increasingly common, in various fields and applications, to provide a so-called 'hotspot' in a mobile platform, which acts as a 'hub' or router to which a plurality of UEs can connect, and by means of which their mobile LTE connectivity can be managed and controlled.
It is known, for example, to provide an LTE vehicle hotspot system which acts as a 'hub' and that enables 'subscriber' devices to connect to an LTE network when they are in a predefined range thereof. When the UE is taken out of range of the hub, it can re-connect with the main LTE (or other communications) network, wherein the static masts are positioned to ensure a broad range of coverage with minimal interruption whilst ensuring efficient use of the spectrum. Given the static nature of the masts, such coverage is planned in such a way that optimised coverage (within an area) and efficient re-use of the spectrum is achieved. However, this static plan cannot adapt itself in real time to suit users' actual locations and needs.
There is, therefore, a desire to provide a mobile communication network in which coverage and re-use of available spectrum can be dynamically configured and reconfigured to adapt to and meet end users' real time locations and needs and/or the environment, and it is an object of the present invention to address this issue.


A mobile communication terminal having adaptive array antennas is provided that is capable of transmitting signals to an intended base station without interfering other devices, even when a reception error occurs. The mobile communication terminal basically performs array transmission/reception using weight vectors produced in reception to weight and combine signals received via antennas, and thereby receives a desired signal. In transmission, the mobile communication terminal uses the weight vectors used in reception to weight and combine transmission signals and transmits them. However, when an error detection circuit detects a reception error in the desired signal, a transmission control unit turns off a switch for the antenna and transmits the transmission signals in a non-directional pattern via the antenna, so that the transmission signal reaches the intended base station.

1. Field of the Invention
The present invention relates to a communication technology for a mobile communication terminal that uses an adaptive array antenna.
2. Related Art
In recent years, increasing attention has been given to the adaptive array method in the field of mobile communication to make efficient use of frequencies and improve communication quality. The adaptive array method is a communication method that performs transmission/reception by adjusting a signal amplitude and phase for each of a plurality of antennas, thereby enhancing a radiant intensity or reception sensitivity with regard to a direction from which a desired signal comes.
A mobile communication system that uses the adaptive array method employs a communication technology in which a base station, equipped with an adaptive antenna array made up of multiple antennas and a control unit, tracks the movement of a mobile communication terminal.
Also, with the recent development of small and light antennas such as a tip antenna, it becomes possible to integrate an adaptive antenna array into a mobile communication terminal.
The following describes how a mobile communication terminal which includes adaptive array antennas controls directivity patterns.
For example, a PHS (personal Handyphone System), a mobile communication terminal, performs transmission and reception alternately in a TDD frame unit using a TDD (Time Division Duplex) method. When receiving a frame, the mobile communication terminal receives known signals such as preambles and unique words from a base station via a plurality of antennas. The mobile communication terminal adds weights to the received signals for each antenna using weight vectors and combines the weighted signals. The weight vectors are adjusted so as to minimize the difference between the resulting combination of signals and a reference signal that is stored in advance (a signal indicating a preamble or a unique word) for the purpose of optimizing the weight vectors. Using the optimum weight vectors, each signal received via the plurality of antennas is weighted and the weighted signals are combined, so that the mobile communication terminal can receive desired signals from the base station. When transmitting a signal to the base station, the mobile communication terminal distributes transmission signals to the plurality of antennas and applies weights to the distributed signals using the weight vectors calculated at the time of reception. Here, to perform reception or transmission with a reception sensitivity or radiant intensity being increased in a predetermined direction is referred to as forming a directivity pattern and performing transmission or reception.
However, due to problems such as weak electrical fields, interference and losses of synchronization, there are cases where the mobile communication terminal cannot receive signals properly from the base station. In this case, transmission signals in the same frame will not be able to reach the base station with which the mobile communication terminal is communicating.
Which is to say, when the mobile communication terminal fails to properly receive signals from the base station, it calculates a weight vector from the improperly received signals and generates a directivity pattern. Because such a pattern does not have directivity towards the intended base station, transmission signals will not reach the base station. This also makes it impossible for the base station to generate a directivity pattern that has directivity towards the mobile communication terminal. Since neither the mobile communication terminal nor the base station can form directivity patterns towards the other device, their transmission signals will not reach the destination. Unless the channel in use is switched, normal communication between them will not be restored.
In addition, the use of a wrong weight vector causes the formation of a directivity pattern having increased radiant intensity towards another unrelated base station or mobile communication terminal, thereby interfering with such unrelated base stations and mobile communication terminals.

Mobile communication terminal, communication method and program


Described herein are various polymer-covered glass and glass-ceramic articles that exhibit improved adhesion between the polymer and the glass or glass-ceramic, along with methods for their manufacture and use. The improved articles generally include a glass or glass-ceramic substrate, a surface-roughened coating disposed on at least a portion of an edge of the glass or glass-ceramic substrate, and a polymer covering disposed on at least a portion of the surface-roughened coating. The surface-roughened coatings beneficially allow the polymer coverings to adhere better to the edge surfaces of the glass or glass-ceramic substrates relative to similar or identical articles that lack the surface-roughened coating.

Methods of applying polymeric materials to glass surfaces have long been of interest for a variety of purposes. Such purposes have included the provision of bezels or frames, stain resistance, reflection- or glare-resistance, and impact absorbance or resistance, among others.
By virtue of their incompatibility, it traditionally has been difficult to apply certain types of polymers to glass surfaces in a manner that results in minimal to no delamination. To overcome these inherent difficulties, methods to improve the adhesion between polymers and glass have been developed. For example, some of these methods include the use of compatibilizing agents (e.g., primers, adhesion promoters, or coupling agents), adhesive laminates, or mechanical means. Even with the use of such methods, delamination of the polymer from the glass can occur.
By way of illustration, it is economically desirable to use injection molding to overmold glass articles with a polymer to fabricate outward-facing components of electronic devices (e.g., cell phones, televisions, laptop computers, tablets, and the like). For example, the overmolding process can be used to encase glass with an impact resistant polymer. This technique is not widely used, however, owing to insufficient adhesion between the polymer and the glass. The poor adhesion can result in delamination of the plastic from the glass over time, during use, or on impact with another object. When the polymer delaminates from the glass, the glass can be prone to breakage on impact such as would happen if the electronic device were to be bumped or dropped.
There accordingly remains a need for technologies that provide improved adhesion between polymers and glass surfaces. It would be particularly advantageous if such technologies did not adversely affect other desirable properties of the glass surfaces (e.g., transmission, haze, strength, scratch resistance, and the like). It is to the provision of such technologies that the present disclosure is directed.

Polymer edge-covered glass articles and methods for making and using same


The present invention provides a lead frame having excellent solder wettability and solderability, that is well-bonded to a copper wire, and manufactured with low cost, and a semiconductor package manufactured by using the same. The lead frame includes: a base material; a first metal layer formed on at least one surface of the base material, the first metal layer comprising nickel; a second metal layer formed on a surface of the first metal layer, the second metal layer comprising palladium; and a third metal layer formed on a surface of the second metal layer, the third metal layer comprising silver.

A lead frame serves to electrically connect a semiconductor chip to an external device and also support the semiconductor chip. A semiconductor package is manufactured by attaching and bonding the semiconductor chip to a lead frame by using a bonding wire and then by sealing the obtained structure with mold resin.

Lead frame and semiconductor package manufactured by using the same


An apparatus for ultrasound scanning of the eye is provided comprising a virtual center translocation mechanism that facilitates precise arcuate motion of an ultrasonic transducer to maintain focal distance from the eye and to maintain normality of the ultrasound beam with surfaces of the eye. The invention also provides a radius adjust mechanism for changing the radius of ultrasound scanning to facilitate positioning of the transducer focal point on selected surfaces of the eye. Centration optics are also provided, for aligning the ultrasound transducer with the Purkinje (or other optical or geometric) axis of a patient""s eye.

The invention is in the field of medical ultrasound apparatus, particularly apparatus for use in ultrasonography of the eye.
Ultrasound may be used in a variety of medical applications, including diagnostic ultrasonography of the eye. Diagnostic information is typically provided by an ultrasound pulse from a piezoelectric transducer, which is directed into a tissue. Reflected acoustic energy is detected (as xe2x80x98echoesxe2x80x99), so that the amplitude of the received energy may be correlated with the time delay in receipt of the echo. The amplitude of the echo signal is proportional to the scattering strength of the refractors in the tissue, and the time delay is proportional to the range of the refractors from the transducer. A variety of hand-held ultrasound instruments for measuring corneal thickness (called pachymeters) have been developed (for example see U.S. Pat. Nos. 4,564,018; 4,817,432; 4,930,512). Many prior art ultrasonic pachymeters provide A-scan output, in the form of waveforms displayed on a cathode ray tube, representing acoustic reflections in a single dimensional xe2x80x98columnxe2x80x99 of tissue.
In B-scan ultrasonography, a two-dimensional image is formed, in which pixel brightness reflects the amplitude of the reflected acoustic signal. A B-scan image therefore represents a cross-sectional slice of the imaged tissue. The cross-sectional information is typically provided by correlating information from a series of adjoining columnar scans (each of which may be used to produce A-scan output). For the purpose of producing B-scans, adjoining columnar scans may be produced by a number of methods: rectilinear translocation of a transducer over the tissue of interest; pivoting angular displacement of a single transducer over a fan-shaped area; or through the use of a linear array of transducers.
In some applications, three dimensional images may be reconstructed from a series of B-scans. U.S. Pat. No, 4,932,414 to Coleman et al. for example describes a system in which the transducer is electronically swept or physically rotated to produce a series of sectored (fan-shaped) scan planes which are separated by a known angular distance, to produce a 3-dimensional display. In a similar fashion, U.S. Pat. No. 5,487,388 to Rello et al. discloses an ultrasonic scanning system in which sequential fan-shaped B-scan image planes are obtained by movement of the transducer probe in an arc, a movement which allows the apex of the scanned 3-dimensional volume to be located below the probe to facilitate imaging between closely-spaced surface obstructions.
The structure of the eye, particularly the cornea, presents special problems for optimal ultrasonographic B-scan imaging. The human cornea is an asphere, flattening concentrically, typically approximately 11 mm across with an average central radius of curvature of 7.8 mm which increases towards the periphery. The high resolution required for ultrasonic imaging of some corneal structures is optimally achieved if ultrasound data is collected from the focal point of the transducer, and the ultrasound beam is normal to the surface of the cornea. As a result, rectilinear scanning of the cornea provides optimal imaging information only from relatively small segments of the cornea which are normal to the transducer beam and in the plane of beam focus. Similarly, volumetric 3-dimensional scanning by reconstruction of a series of fan-shaped B-scan planes, as for example described in U.S. Pat. Nos. 4,932,414 and 5,487,388, is not a system adapted to provide the degree of resolution required for biometry of the corneal surface.
High frequency ultrasound has been used in ophthalmological ultrasonography to obtain biometric B-scan images of the human cornea, by arcuate translocation of a single element focused transducer. Silverman et al., 1997, J. Ultrasound Med. 16:117-124, describe a system for sonographic imaging and biometry of the cornea in which a sophisticated programmable motion system permits ultrasonographic arc scanning. In the Silverman et al system, the ultrasonic transducer is translated through an arc matched to the approximate radius of curvature of the cornea using five servo motors and a controller. Similarly, U.S. Pat. No. 5,331,962 discloses an ultrasound system for corneal arc scanning, in which a transducer is translocated along a curved track that approximates the surface curvature of the cornea
In one aspect of the invention, an apparatus for ultrasound scanning of the eye is provided comprising a virtual center translocation mechanism that facilitates precise arcuate motion of an ultrasonic transducer to maintain focal distance from the eye and to maintain normality of the ultrasound beam with surfaces of the eye. The arcuate movement of the transducer focal path may closely approximate the surface of the cornea. Some embodiments of the invention may include a radius adjust mechanism for changing the radius of ultrasound scanning, to accommodate different eye sizes and to facilitate positioning of the ultrasound transducer focal point on selected surfaces of the eye, such as the cornea. Centration optics may also be provided, for aligning the translocation path of the ultrasound transducer with an axis such as, but not limited to, the Purkinje axis of a patient""s eye.
In one embodiment, the invention provides an ultrasound transducer support comprising a transducer mount adapted to accommodate an ultrasound transducer having a focal point. The support may be provided with a virtual center mechanism attached to the transducer mount, for moving the ultrasound transducer along an arcuate translation path. The arcuate translation path of the transducer may be offset from a virtual center of translocation by a radius of transducer translocation, so that the focal point of the ultrasound transducer traverses an arcuate focal path about the virtual center of translocation. A radius adjust mechanism may be provided for adjusting the position of the transducer mount to change the radius of transducer translocation.
In an alternative embodiment, the invention provides a method of ophthaamological ultrasonography comprising centring an ultrasound transducer having a focal point in alignment with the Purkinje or other optical or geometric axis of a patient""s eye using centration optics, and moving the ultrasound transducer along an arcuate translation path intersecting the Purkinje or other optical or geometric axis of the patient""s eye. The arcuate translation path of the transducer may be offset from a virtual center of translocation by a radius of transducer translocation, so that the focal point of the ultrasound transducer traverses an arcuate focal path about the virtual center of translocation.

Ophthalmological ultrasonography scanning apparatus


A semiconductor apparatus is disclosed. The semiconductor apparatus comprises a substrate with a pad, an internal circuitry region, and a protection resistance formed on the substrate. The pad is connected to a first electrode of the protection resistance by wiring, the internal circuitry region is connected to a second electrode of the protection resistance by wiring, and the protection resistance protects the internal circuitry region from electrostatic discharging. The semiconductor apparatus is characterized in that the pad is placed between the protection resistance and the internal circuitry region.

Conventional semiconductor apparatuses are equipped with a protection circuit at the inner side of an input pad thereof, in order to prevent the semiconductor apparatuses from breaking down due to electrostatic current, as shown in Japanese Patent Laid-Open Publication No. 9-17954, for example.
FIG. 8 shows a circuit diagram of such a conventional semiconductor apparatus 1000 having a protection circuit. The semiconductor apparatus 1000 is equipped with a protection circuit 50 between an input part (IN) 6 and semiconductor devices 10. The protection circuit 50 comprises a protection resistance 2 and a protection transistor 9 functioning as a diode.
In the protection circuit 50, electrostatic electricity (charges) input at the input part (IN) flows through the protection resistance 2, resulting in reducing the electrostatic voltage and protecting internal semiconductor devices. In a case where the voltage input at the input part is very high and cannot be reduced enough by the protection resistance 2, the protection transistor 9 turns ON and allows the electrostatic charges to flow down to the ground Vss to protect the internal semiconductor devices 10. In this specification and claims, the protection transistor and devices in the semiconductor device side are collectively referred to as "internal circuitry".
FIG. 9 is a cross-sectional view of the semiconductor apparatus 1000. An input pad 6 is formed integrally with a metal wiring layer (ME1) 5. A protection resistance 2 is formed by an N-well in a semiconductor substrate 1. In the N-well, a first electrode 3 of an N+ region and a second electrode 4 of an N+ region are provided. The first electrode 3 is connected to the input pad 6 via the metal wiring layer (ME1) 5. The second electrode 4 is connected to a drain of a protection transistor 9 via another metal wiring layer (ME2) 7. A gate and a source of the protection transistor 9 are shorted and connected to ground Vss. The semiconductor devices in the internal circuitry are connected to the metal wiring layer (ME2) 7.
In order to supply the semiconductor apparatus with electric power, a P+ region independently formed in the silicon substrate 1 is connected to ground Vss, and an N+ region independently formed in the silicon substrate 1 is connected to a positive power supply Vdd.
The semiconductor apparatus 1000 is fully covered and insulated with an oxide layer 8, except an opening for the input pad 6. The metal wiring layer (ME1) 5 of the input pad 6 and the silicon substrate 1 are insulated with the silicon oxide layer 8.
As mentioned above, when high voltage static electricity is applied to the input pad 6, the electrostatic current normally flowing from the input pad 6 through the metal wiring layer (ME1) 5 and the protection resistance 2 to the metal wiring layer 7 (ME2), further flows through the drain and source of the protection transistor 9 to ground Vss. As a result, the internal semiconductor devices connected to the metal wiring layer (ME2) are not damaged.
There are other routes in which the electrostatic current flows from the first electrode 3 of the protection resistance 2, such as through the N-well region, to the positive power supply Vdd, or to ground Vss.
However, as shown in FIG. 10, in the conventional semiconductor apparatus 1000 the protection resistance 2 is placed between the input pad 6 and the internal circuitry 10. The first electrode 3 of the protection resistance 2 has substantially the same electrical potential as the input pad 6, and the first electrode 3 is formed in the silicon substrate 1; therefore electric discharge (leakage) occurs from the first electrode 3 to other circuitry formed in the silicon substrate 1, especially to semiconductor devices formed in the internal circuitry region 10, resulting in the breakdown of the semiconductor devices. In order to prevent such electric discharge, a length L2 between the internal circuitry region 10 and the first electrode 3 needs to be increased, but that makes it difficult to miniaturize and highly integrate semiconductor devices.
As shown in FIG. 11, in a case where the input pad 6 is placed at a peripheral portion of the semiconductor apparatus 1100, especially adjacent to a corner, a length L3 between the internal circuitry region 10 and the first electrode 3 needs to be further increased, making it more difficult to miniaturize the semiconductor apparatus 1100.


Methods for fabricating a flash memory device are provided. A method comprises forming a plurality of gate stacks overlying a substrate. Each gate stack comprises a charge trapping layer and a control gate. The control gate is a first distance from the substrate. Adjacent gate stacks are a second distance apart. A cell spacer material layer is deposited and is etched to form a spacer about sidewalls of each gate stack. A source/drain impurity doped region is formed adjacent a first gate stack and a last gate stack. The first distance and the second distance are such that, when a voltage is applied to a gate stack during a READ operation, a fringing field is created between the control gate of the gate stack and the substrate and is sufficient to invert a portion of the substrate between the gate stack and an adjacent gate stack.

Flash and other types of nonvolatile electronic memory devices are constructed of memory cells operative to individually store and provide access to binary information or data in a nonvolatile memory. In typical nonvolatile memory architectures, each cell includes an MOS transistor structure having a source, a drain, and a channel in a substrate or P-well, as well as a stacked gate structure overlying the channel. The individual memory cells are organized into individually addressable units or groups such as bytes, which comprise eight cells, or words, which may include sixteen or more such cells, usually configured in multiples of eight. Storage of data in such memory device architectures is performed by writing to a particular set of memory cells, sometimes referred to as programming the cells. Retrieval of data from the cells is accomplished in a read operation. In addition to programming and read operations, groups of cells in a memory device may be erased, wherein each cell in the group is programmed to a known state. The bytes or words of memory cells are accessed for read, program, or erase operations through address decoding circuitry using conductive interconnects typically referred to as wordlines and bitlines.
Cells in flash memory devices may be interconnected in a variety of different configurations. One such configuration is the NAND configuration. Referring initially to FIGS. 1 and 2, a core region or portion of a NAND flash memory device 10 formed according to a conventional method comprises a NAND array 12. The NAND array 12 includes one or more cells 14, series connected source to drain within source/drain regions 16 along columns of conductive programming lines 18, commonly known as bitlines, as illustrated by the dashed line 60. Typically, a NAND array may comprise a series string of thirty-two (32) memory cells 14 between a select drain gate transistor 28 and a select source gate transistor 24, although for the sake of brevity, only four such memory cells are shown. Bitlines are selected by addressing select drain gate transistor 28. Individual cells 14 within an associated bitline 18 are selected via rows of wordlines 20 connected to the gate stack of each memory cell 14. The wordlines 20 along the bitline 18 control the flow of current between a source line structure 22 and a bitline contact region 32. Between the columns of bitlines 18 are regions of shallow trench isolation (STI) 30 to isolate and separate adjacent bitline active areas.
An N-channel NAND array 12 of FIGS. 1 and 2 comprises a P-type silicon substrate 40 within and over which are formed a plurality of memory cells 14. The memory cells 14 typically comprise a charge trapping layer such as in a conventional oxide-nitride-oxide (ONO) layer or stack 46 comprising, for example, a silicon nitride layer disposed between upper and lower silicon dioxide layers. A polysilicon gate 48 overlies the upper oxide layer of the ONO stack 46 and may be doped with an n-type impurity. A charge blocking layer, such as a high-dielectric constant material layer 50, may be disposed between the ONO stack 46 and the polysilicon gate 48. As used herein, the term "high dielectric constant material" means any insulating material having a dielectric constant greater than the dielectric constant of silicon dioxide. Sidewall spacers 52 are disposed about the sidewalls of the memory cells 14 as well as along the sidewalls of select drain gate transistor 28, and select source gate transistor 24 and are formed of an insulating material. Cell spacers 44 overlie sidewall spacers 52 about the sidewalls of the memory cells 14, select drain gate transistor 28, and select source gate transistor 24 and are formed of another insulative material. Source/drain regions 16, lightly doped with an n-type impurity such as phosphorus or arsenic are formed between the memory gate stacks while the bitline contact region 32 and the source line structure 22 may be typically heavily doped with an additional n-type implant 42 using sidewall spacers 52 and cell spacers 44 as an impurity doping mask.
During a READ operation of a selected cell 54, a high voltage, for example, 5 volts, is applied to the unselected wordlines, the select drain gate 28, and the select source gate 24 to turn on those transistors. A READ voltage of, for example, 1 volt is applied to the word line of the selected cell. The programmed state of the selected cell is determined by monitoring whether or not current flows along the bitline of the selected cell 54. Current will flow if the READ voltage exceeds the threshold voltage (VT) of the selected cell and will not flow if the selected cell has been programmed with a threshold voltage that is higher than the READ voltage.
As device densities increase and product dimensions decrease, it is desirable to reduce the size of the various structures and features associated with individual memory cells, sometimes referred to as scaling. However, the fabrication techniques used to produce conventional flash memory arrays limit or inhibit the designer's ability to reduce array dimensions. For example, in conventional array fabrication, implantation to fabricate the source/drain regions is performed after the layers of the gates are etched. However, as the source/drain regions become smaller in scale, short channel effects become a bigger challenge. In addition, etching of the ONO stacks of the gates may result in damage to the silicon nitride charge trapping layer of the ONO stacks, causing poor data retention or low gate-to-substrate breakdown voltage.
Accordingly, it is desirable to provide a method for fabricating a scaled flash memory device that overcomes short channel effects. In addition, it is desirable to provide a method for fabricating a flash memory device that minimizes damage to the charge trapping layer of the memory cells. Furthermore, other desirable features and characteristics of the present invention will become apparent from the subsequent detailed description of the invention and the appended claims, taken in conjunction with the accompanying drawings and this background of the invention.

Methods for fabricating flash memory devices


Provided is a memory device that can detect a mismatch in a bit line sense amp, wherein the memory device includes a sense amp drive unit for selectively supplying a pull-up drive voltage or a pull-down drive voltage to a bit line sense amp in response to a sensing test signal provided from outside.

The present invention relates to a memory device; and, more particularly, to a memory device that can detect a mismatch in a bit line sense amp amplifying a potential difference between a pair of bit lines.
Basically, a memory device reads and writes data required by external devices. A basic unit for storing data is called a "cell," and the memory device has one capacitor for storing one data. In order to read the data stored in the capacitor and to accurately transfer it outside, it is necessary to accurately decide polarity of data stored in the cell. To this end, the memory device is provided with a bit line sense amp as a device for deciding/amplifying data.
FIG. 1 is a circuit diagram for describing the concept of a cell array and a bit line sense amp according to the prior art. Word lines (WL1, WL2 and WL3), bit line separation signals(BISH and BISL) and a bit line equalization signal BLEQ are illustrated in FIG. 1.
Normally, a pair of bit lines BL and /BL connected to the bit line sense amp is precharged to a same voltage level. Then, when a first word line WL1 is enabled, a cell transistor 101 connected to the first word line WL is turned on, and data charged in a capacitor 102 flows through a channel of the cell transistor 101 to the bit line BL (this is called "charge sharing"). At this time, the negative bit line /BL maintains the precharge voltage VBLP level, and only an electric potential on the positive bit line BL is changed through charge sharing.
On the other hand, as well-known in the art, the bit line sense amp 103 serves to recognize a potential difference between both ends of the positive bit line BL and the negative bit line /BL, and to fully amplify a high electric potential to an even higher electric potential and to fully amplify a low electric potential to an even lower electric potential (this is also called "sensing").
Ideally, the bit line sense amp 103 should be able to accurately sense even a small potential difference between both ends of the bit line pair BL and /BL, and amplify it. However, this is not so in reality. A potential difference dV(delta V) between both ends of the bit line pair BL and /BL enough to do the sensing operation is called an offset voltage of the bit line sense amp. If the potential difference between both ends of the bit line pair BL and /BL is not higher than the offset voltage, it is not guaranteed that the bit line sense amp 103 could perform an accurate sensing operation. One of the factors that cause such an offset voltage is a mismatch in the bit line sense amp 103. That is, a latch PMOS pair and a latch NMOS pair in the bit line sense amp 103 responsible for sensing should be fabricated identically as cross-coupled pairs, but their layout is not exactly symmetric in reality. Also, even if the layout is symmetric somehow, their patterns are not formed identically. In addition, a contact is not always defined in the same way. Because of these problems, a mismatch inevitably exists in the bit line sense amp 103.
FIG. 2 is a block diagram illustrating a bit line sense amp and a sense amp drive unit according to the prior art.
The sense amp drive unit 210 has a role of controlling the bit line sense amp 220 to start and stop sensing in response to an external command, and is provided with a sense amp controller 230 and a sense amp driver 240. A power-up signal PWEUP, a precharge pulse PCGP, a bit line equalization signal BLEQ, bit line pairs (BL u, /BL u, BL d and /BL d) and bit line separation signals(BISH and BISL) are illustrated in FIG. 2.
FIG. 3 shows a detailed circuit diagram of the sense amp controller 230 according to the prior art.
The sense amp controller 230 is a part that applies a pull-up drive signal RTOEN and a pull-down drive signal SBEN to the sense amp driver 240 in response to signals provided from outside. Its operation will now be explained with reference to FIG. 3.
When an Active command is inputted and an active pulse ACTP goes HIGH, the active pulse ACTP is inverted by an inverter I1. Then, a LOW voltage is fed to the gate of a transistor P1, so that the transistor P1 is turned on and a node a becomes a HIGH state. The HIGH voltage at the node a is latched and inverted by inverters I3 and I4 having input and output terminals interlocked to each other, thereby making a voltage at a node b in a LOW state. Further, the voltage of the node b is inverted by each of inverters I5 and I6, so that the pull-up drive signal RTOEN and the pull-down signal SBEN are outputted at HIGH states, respectively.
Thereafter, when a precharge command is inputted and a precharge pulse PCGP goes HIGH, the transistor N1 is turned on, the node a becomes a LOW state, and the pull-up drive signal RTOEN and the pull-down drive signal SBEN become a LOW state, respectively.
In FIG. 3, a power-up signal PWRUP is a signal for keeping initial values of the pull-up drive signal RTOEN and of the pull-down drive signal SBEN in LOW states; delay circuits 301 and 302 and switches connected thereto are for controlling a start time of the pull-up drive signal RTOEN and the pull-down drive signal SBEN. These signals are not necessarily related to the present invention. An external voltage VDD, a ground voltage VSS, and a transistor N2 are illustrated in FIG. 3.
FIG. 4 provides a detailed circuit diagram of the sense amp driver 240 according to the prior art.
The sense amp driver 240 serves to receive the pull-up drive signal RTOEN and the pull-down drive signal SBEN from the sense amp controller 230, and supply a pull-up drive voltage RTO and a pull-down drive voltage SB to the bit line sense amp 220. And, a core voltage VCORE is illustrated in FIG. 4. An operation thereof will now be described with reference to FIG. 4.
During the precharge operation, a Bit Line EQualizing (BLEQ) signal becomes a HIGH state, and makes the RTO and SB nodes to a bit line precharge voltage VBLP. However, when the Active command is inputted, the BLEG signal becomes a LOW state. In result, the RTO and SB nodes are separated from each other; and when the signals RTOEN and the SBEN are inputted from the sense amp controller 230, the transistors T1 and T2 are turned on and the RTO node becomes a core voltage VCORE while the SB node become a ground voltage, to thereby drive the bit line sense amp 220.
As described above, because the conventional sense amp drive unit 210 simultaneously feeds the pull-up drive voltage RTO and the pull-down drive voltage SB to the bit line sense amp 220 during an active operation, a sensing operation occurs simultaneously by the NMOS transistor pair and the PMOS transistor pair in the bit line sense amp 220. Therefore, if an error occurs during a read operation, it is hard to find out whether the error is caused by a mismatch in the NMOS transistors or by a mismatch in the PMOS transistors.

Memory device having function of detecting bit line sense amp mismatch