The Simplified Internet Payment, Security, & Tax Administration Protocol (SIPSTAP) is designed to simplify the payment procedure on the World Wide Web to enable uniform, easier, and secured access to buying and selling on the web. The invention overcomes the limitations of geographical location, currency and, non- possession of credit cards which deter most would- be users, by involving a third party whose major role is to generate Internet System of Values which can be purchased anywhere on the globe. It envisages that user access to the web may be through their email address, and by attaching electronic accounts to email addresses, Internet users will be able to purchase as many units as desired to credit their accounts while, online purchases are debited. The third party playing the role of an intermediary transfers the transaction sums to the merchants on the buyer's behalf.

The Internet has witnessed rapid growth and expansion especially from the early 1990s onwards. It has become accepted as a medium of general usage worldwide, as a result of which more and more people are turning to it for an array of reasons. As a market place, it is already providing opportunity for millions of peoples to trade in goods and services. But unlike other conventional market places, the Internet has no "legal tender". This is understandable given the fact that it transcends all natural and man-made political and geographical delineations. Presently, the means of payments in use include credit cards, bank checks and, money orders. Of these three, credit cards are the most popular because of their real time, on time value in facilitating e-commerce transactions.
But of significant concern is the fact that the use of credit cards is only popular in North America and, parts of Europe. Simply put, a vast proportion of Internet users world-wide does not have access to credit cards, as their economies are cash based. This limitation is severely affecting the volume and value of online transactions. According to a publication by Jupiter Communications, 33% of the U.S. population and, 90% of world population do not have credit cards but want to shop online. From this same study, it was found that 93% of online consumers above the age 45 did not complete their Internet transactions because of misuse and privacy concerns (AARP). Another research by the Peppers and Rogers Group has found that 98.9% of direct sales revenue earned on the web between 1999 and 2001 were on B2B basis. The future of Internet retail sales as forecasted for the next 8 years by this report is distressing. It is clear that the absence of a convenient, rational and globally acceptable payment mechanism will continue to stifle retail and individual transactions on the web.
From the emerging patterns, it can be assumed that B2B transactions and relationships have been on long before the advent of the Internet. Therefore, businesses have established trust and developed secured channels for making payments such as Letters of Credit, Transfers, Direct Debit, etc. which has now been carried over to the Internet. Retail users do not have this benefit. Another point of note is that corporations offering credit card services have minimum amounts of business below which, they will not touch. This further discourages retail purchases below $10 on the web.
Also, service providers are limited to incomes they generate from sign-up, monthly/annual subscriptions and, charges on some services from within specific geographic locations only whereas they stand a chance to get paid worldwide for offering the same services. The frustration of the glaring lack of access to credit cards by patrons and the attendant geographic gulf has forced Internet Service Providers (ISPs) merchants to offer so many services for 'free'. Consequently, most of the free offerings on the Internet have become subject to much abuse by some merchants and users. As the Internet has grown in popularity, so also has grown massive dread for it as a result of severe abuses like unwanted and frequent intrusion into peoples privacy, stealing of users confidential information, etc. The activities of spamming, hacking, e-bombing, spoofing and defacing of web pages by cyber terrorists constitute one huge albatross that Internet users are having to deal with albeit unsuccessfully. Studies have shown that cyber crimes are committed by young, impressionable IT students/personnel who derive pleasure in creating programs that run counter to the various applications driving the world wide web. And, they are able to commit these atrocities simply because after paying a fixed monthly/annual access charge the web is virtually free for anyone with access either to host a website, upload, download, receive or, send any 'stuff'. Attempts at evolving net ethics do not seem capable of addressing these problems.
ISPs have found themselves in this helpless situation because of the absence. of a payment method that enables them charge for services such as subscriptions, sending emails, conducting searches, joining news/chat groups, etc. As stated above this is because of the supranational nature of the Internet, the resultant scattered location of users across several international boundaries and the near impossibility of an acceptable Internet legal tender.

Simplified internet payment, security, & tax administration protocol (SIPSTAP)


A first robotic assembly transfers articles from carriers on a transport mechanism at a loading area to a first load conveyor. The conveyor transfers the articles to a process conveyor which moves the articles through a target region at a substantially constant speed. The process conveyor then transfers the articles to a second load conveyor. A second robotic assembly then transfers the articles to article carriers on the transport mechanism at an unloading area. The load and process conveyors may be divided into two tracks. First and second radiation sources respectively disposed at first and second gaps in the process conveyor in the target region respectively irradiate the articles in both tracks in opposite directions from positions above and below the articles. Articles on the tracks may be (a) diverged on the first load conveyor to separate the articles from the dividers, (b) converged on the process conveyor to minimize the width of the radiation sources and (c) diverged on the second load conveyor. If one of the radiation sources is not operative, the other source may irradiate the opposite sides of the articles during article movements sequentially on the first tracks of the first load conveyor, the process conveyor and the second load conveyor and then sequentially on the second tracks of the first load conveyor, the process conveyor and the second load conveyor. The articles are inverted during their transfer from the first track of the second load conveyor to the second track of the first load conveyor.

It has been known for some time that drugs and medical instruments and implements have to be sterilized so that they will not cause patients to become ill from harmful bacteria when they are applied to the patients. Systems have accordingly been provided for sterilizing drugs and medical instruments and implements. The drugs and the medical instruments and implements are then stored in sterilized packages until they are ready to be used.
In recent years, it has been discovered that foods can carry harmful bacteria if they are not processed properly or, even if they are processed properly, that the foods can harbor such harmful bacteria if they are not stored properly or retained under proper environmental conditions such as temperature. Some of these harmful bacteria can even be deadly.
For example, harmful bacteria have been discovered in recent years in hamburgers sold by one of the large national hamburger chains. Such harmful bacteria caused a number of purchasers of hamburgers from stores in the chain to become sick. As a result of this incident and several other similar incidents, it is now recommended that hamburgers should be cooked to a medium state rather than to a medium rare or rare state.
Similarly, harmful bacteria have been found to exist in many chickens that are sold to the public. In view of a number of incidents which have occurred, it is now recommended that all chickens be cooked so that no blood is visible in the cooked chickens.
To prevent incidents such as discussed in the previous paragraphs from occurring, various industries have now started to plan for sterilizing foods before the foods are sold to the public. This is true, for example, of hamburgers and chickens. It is also true of fruits, particularly fruits which are imported from foreign countries.
The preferred embodiments may be used to sterilize different products including drugs and medical instruments and medical implements but are particularly adapted to be used for sterilizing foods. In sterilizing foods, it is important that the sterilization is sufficiently strong to kill harmful bacteria in the food but is not so strong as to kill beneficial bacteria in the foods.
In the preferred embodiments, a first robotic assembly transfers articles form carriers on a transport mechanism at a loading area to a first load conveyor. The conveyor transfers the articles to a process conveyor which moves the articles through a target region at a substantially constant speed. The load and process conveyors may be divided into two tracks. First and second radiation sources respectively disposed at first and second gaps on the process conveyor in the target region respectively irradiate the articles in opposite directions from positions above and below the articles. The process conveyor then transfers the articles to a second load conveyor. A second robotic assembly then transfers the articles to article carriers on the transport mechanism at an unloading area.
Articles on the tracks may be (a) diverged on the first load conveyor to separate the articles from the dividers, (b) converged on the process conveyor to minimize the width of the radiation sources and (c) diverged on the second load conveyor.
If one of the radiation sources is not operative, the other source may irradiate the opposite sides of the articles during article movements sequentially on the first tracks of the first load conveyor, the process conveyor and the second load conveyor and then sequentially on the second tracks of the first load conveyor, the process conveyor and the second load conveyor. The articles are inverted during their transfer from the first track of the second load conveyor to the second track of the first load conveyor.

System for, and method of, irradiating articles to sterilize the articles


A long life double layer capacitor and method of making the same including a case and a first terminal with an electrically insulating hermitic seal interposed between the first terminal and the case. A first current collector foil is electrically coupled to an interior portion of the first terminal and a first electrode comprising carbon which is juxtaposed against the first current collector foil. A porous separator is then juxtaposed against the first electrode comprising carbon and separating the first electrode from a second electrode comprising carbon. A second current collector foil is juxtaposed against a side of the second electrode and is electrically coupled to the second terminal. And an electrolyte solution saturates the first and second electrodes comprising carbon and is substantially contained by the case and the electrically insulating hermitic seal such that an influx of impurities into the electrolyte solution is substantially inhibited by the case and the electrically insulating hermetic seal.

There is a well recognized need in the electronics industry for a rechargeable energy source with high reliability that can provide high power, that can be charged, discharged, and recharged quickly, and that has a high life cycle, i.e., is long life. Among applications that could benefit from such as device are industrial applications, consumer applications, and automotive applications.
Double layer capacitors, also referred to as electrochemical capacitors, are energy storage devices that are able to store more energy per unit weight and unit volume than traditional capacitors. In addition, they can typically deliver the stored energy at a higher power rating than rechargeable batteries.
Double layer capacitors consist of two porous electrodes that are isolated from electrical contact by a porous separator. Both the separator and the electrodes are impregnated with an electrolyte solution. This structure allows ionic current to flow between the electrodes through the porous separator at the same time that the porous separator prevents an electrical or electronic current (as opposed to ionic current) from shorting the two porous electrodes. Coupled to the back of each of the active electrodes is a current collecting plate. One purpose of the current collecting plate is to reduce ohmic losses in the double layer capacitor. If these current collecting plates are non-porous, they can also be used as part of the capacitor seal.
Double layer capacitors store electrostatic energy in a polarized liquid layer which forms when a potential exists between two electrodes immersed in an electrolyte. When the potential is applied across the electrodes, a double layer of positive and negative charges is formed at the electrode-electrolyte interface (hence, the name "double layer" capacitor) by the polarization of the electrolyte ions due to charge separation under the applied electric field, and also due to the dipole orientation and alignment of electrolyte molecules over the entire surface of the electrodes.
A major problem in many carbon electrode capacitors, including double layer capacitors, is that the performance of the capacitor is often limited because of the high internal resistance of the carbon electrodes. This high internal resistance may be due to several factors, including the high contact resistance of the internal carbon-carbon contacts, and the contact resistance of the electrodes with a current collector. This high resistance translates to large ohmic losses in the capacitor during the charging and discharge phases, which losses further adversely affect the characteristic RC (resistance×capacitance) time constant of the capacitor and interfere with its ability to be efficiently charged and/or discharged in a short period of time. There is thus a need in the art for lowering the internal resistance, and hence the time constant, of double layer capacitors.
Another area of concern in the fabrication of double layer capacitors relates to the method of connecting the current collector plate to the electrode. This is important because the interface between the electrode and the current collector plate is another source of internal resistance of the double layer capacitor, and such internal resistance must be kept as low as possible.
Recently, electrochemical capacitors employing non-aqueous (organic) electrolyte solutions have been developed. These double layer capacitors have the advantage of higher operating voltage, but generally suffer from higher internal resistance. Nonetheless, the operating voltage greatly increases the energy density of the double layer capacitor. For example, an aqueous double layer capacitor may only operate at 0.67 volts per cell, while a similar non-aqueous device will operate at 2.3 volts per cell. This difference in operating voltage increases energy density by a factor of 11.8.
Unfortunately, non-aqueous electrolytes tend to be much more sensitive to impurities, such as water or oxygen, in the electrolyte. Any level of these impurities will lead to gas generation within the double layer capacitor when the double layer capacitor is operated at high voltage. Because of this, manufacturers of non-aqueous electrolyte double layer capacitors take great care is limiting the levels of water and oxygen contamination within the electrolyte solution during manufacture, striving to achieve levels of contamination on the order of 10 to 100 parts per million.
In order to achieve long life in a double layer capacitor employing a non-aqueous electrolyte and that is operated at high voltage, care must be taken in limiting the influx of water and oxygen into the electrolyte solution. Commercially available non-aqueous electrolyte double layer capacitors are packaged with sealing technologies that limit the life of these double layer capacitors due to the influx of water and oxygen.
Another issue that continues to face virtually any technology that involves electronics is that of miniaturization. With smaller and smaller devices being designed, and thus smaller and smaller components being demanded, pressures have been put on the makers of double layer capacitors to decrease device size, while maintaining a high level of capacitance. This demands not only extremely low internal resistances, but poses an additional problem.
This additional problem lies in the fact that, at least in non-aqueous electrolyte double-layer capacitors, environmental contamination from, for example, air and water leaking into the electrolyte result in a significant reduction in capacitance, and a corresponding increase in resistance, namely resistance to ionic current flow.
While in conventional double-layer capacitor devices conventional technology has been applied to seal the capacitors so as to both contain the electrolyte and to prevent contamination of the electrolyte with oxygen and water, as devices become increasingly miniaturized, conventional techniques are no longer suitable. Further complicating this problem is the fact that materials used in sealing the double-layer capacitor must be thermally and chemically compatible with the electrolyte and the case of the capacitor, and provide appropriate electrical characteristics, i.e., be conductive or an insulator, depending on where the seal is positioned.
With small double-layer capacitor devices, a further complication arises in that consumer demand is for devices that can be directly soldered to printed circuit boards. Thus external terminals must not only be compatible with the sealing approach adopted (and it with them), but must be of a material that is solderable using conventional soldering techniques and materials. Furthermore, in a conventional automated soldering process, the case and internal components of the double layer capacitor must be able to withstand exposure to high temperatures, for example, temperatures of up to 250 degrees Celsius for up to 5 minutes.
It is thus apparent that there is a continuing need for improved double layer capacitors. Such improved double layer capacitors need to deliver large amounts of useful energy at a very high power output and energy density ratings within a relatively short period of time, and need to be produced in a small, solderable, long-life device. Such improved double layer capacitors should also have a relatively low internal resistance and yet be capable of yielding a relatively high operating voltage. It is also apparent that these devices should be of low internal resistance.

Multi-electrode double-layer capacitor having hermetic electrolyte seal


An exposure pattern or mask inspection and manufacture method and an exposure pattern or mask are provided which can perform comparison inspection of the exposure pattern or mask with ease and at a high precision. A mask pattern portion for exposing a predetermined pattern by an exposure beam is inspected by disposing a plurality of dummy inspection patterns having the same pattern as at least a part of the mask pattern portion, inside and/or outside an area of the mask pattern portion and comparing at least the portion of the mask pattern portion with the dummy inspection pattern portion or portions.

1. Field of the Invention
The present invention relates to an exposure pattern or mask suitable for use in an electron beam exposure process and to an inspection method and a manufacturing method for an exposure pattern or mask.
2. Description of Related Art
Miniaturization of recent semiconductor devices advances further and exceeds the limit of a resolution of an optical lithography system. In order to overcome this, fine patterning techniques have been developed which use a charged particle beam, such as an electron beam, and an ion beam to expose and draw a micro circuit pattern.
A conventional, direct drawing method utilizing electron beam exposure, however, requires a large amount of data when micro patterns are used for an LSI (large scale integrated) circuit having a high integration density. This results in a long drawing time and a low productivity (throughput).
In order to address this drawback, an electron beam aligner or an ion beam aligner has been proposed which irradiates an electron beam or an ion beam to a transfer mask to form a circuit pattern on a wafer with the beam passed through holes (pattern openings) of the transfer mask.
Exposure techniques of this type include, for example, an electron beam projection lithography using a high energy electron beam (refer to EPL: Electron-beam Proximity Lithography, H. C. Pfeiffer, Jpn. J. Appl. Phys. 34, 6658 (1995)), a low energy electron beam proximity projection lithography using a low energy electron beam (refer to LEEPL: Low Energy Electron-beam Proximity Projection Lithography, T. Utsumi, U. S. Pat. No. 5,831,272 (3, Nov. 1998)), an ion beam projection lithography using an ion beam (refer to IPL: Ion-beam Lithography, H. Loeschner et al., J. Vac. Sci. Technol. B19, 2520 (2001)), and other techniques.
An electron beam transmission mask (projection mask) used with these aligners, e.g., an LEEPL stencil mask, has a structure such as that shown in the plan view of FIG. 10A and the cross sectional view of FIG. 10B taken along line X-X′ shown in FIG. 10A. This stencil mask 67 has a membrane (thin film) having a thickness of 100 nm to 10 μm and formed with pattern openings 59. For example, the membrane (thin film) 51 of the stencil mask 67 having a thickness of 100 nm to 10 μm in thickness has a plurality of through holes (pattern openings) 59 having a width of 0.03 μm to 0.04 μm through which an electron beam is transmitted. In FIGS. 10A and 10B, only several pattern openings 59 are drawn for the purposes of drawing simplicity. The membrane 51 is supported by a silicon (Si) wafer (support substrate) 56. The Si wafer 56 is formed on an SiO2 film 55 formed around and outside the pattern openings 59 and having an opening 61 of 20 to 40 mm in diameter and has an opening 60 larger in size than the opening 61 of the SiO2 film 55.
As shown in FIG. 11, in an exposure process using the stencil mask 67, for example, the stencil mask 67 is disposed on a photoresist layer 57 formed on a wiring material layer 54 to be patterned, the wiring material layer being formed on an SiO2 film 55 on a semiconductor substrate 58. In this state, an electron beam 71 is emitted and passed through the pattern openings 59 of the membrane 51 of the stencil mask 67 to expose the photoresist layer 57 in a predetermined pattern. A photoresist pattern 57 left through development is used as a mask to dry etch the wiring material layer 54 and form a wiring pattern.
If the stencil mask 67 has, for example, a rectangular ring pattern opening 59 such as shown in FIG. 12A, a central area 51a serving as an electron beam absorber area falls out and cannot maintain the pattern opening. If the stencil mask has a leaf-shaped opening pattern (not shown), the shape of the opening pattern cannot be maintained stably, because this opening pattern is of a cantilever structure. These pattern openings are unable to be formed or difficult to be formed.
In order to form an object pattern opening 59 on a wafer, a so-called complementary division method has been introduced. Namely, the pattern opening 59 is geometrically divided into two masks 67A and 67B having divided opening patterns 59A and 59B, respectively, as shown in FIG. 12B, and are complementarily overlaid on the wafer, as shown in FIG. 12C.
FIGS. 13A to 14C illustrate a process of fabricating the stencil mask 67. As shown in FIG. 13A, on an Si wafer (support substrate) 56, an SiO2 film 55 and a membrane 51 made of Si or SiC are sequentially deposited to predetermined thicknesses.
As shown in FIG. 13B, a resist layer 63 having a predetermined pattern is formed on the Si wafer 56. A partial region of the Si wafer 56 is removed down to the surface of the SiO2 film 55 by dry etching to form an opening 60 and a support column 70 which partitions each mask quadrant.
As shown in FIG. 13C, after the resist pattern 63 is removed, by using the Si wafer 56 and support column 70 as a mask, a partial region of the SiO2 film 55 is removed down to the surface of the membrane 51 by dry etching to form an opening 61.
As shown in FIG. 14A in the up-side-down state of FIG. 13C, a resist layer 63 is formed on the membrane 51 and processed to have a predetermined pattern.
More specifically, openings 64 are formed through the membrane 51 to form a mask pattern portion 62 above the openings 60 and 61.
Next, as shown in FIG. 14B, by using the resist pattern 63 as a mask, the membrane 51 is dry etched to form through holes in the area corresponding to the mask pattern portion 62 to thereby form mask pattern openings 66.
Thereafter, as shown in FIG. 14C, the resist pattern 63 on the membrane 51 is removed so that a stencil mask 67 can be formed.
It is important to inspect whether the stencil mask has the pattern openings 66 just as designed.
In one example of a mask inspection apparatus and method, by utilizing an electron beam aligner without utilizing an additional inspection apparatus, it is possible to inspect whether there is any defect of a mask. {Refer to Patent Document 1: Japanese Unexamined Patent Publication No. 2001-153637 (p. 3, 28th line in right column to p. 5, 2nd line in right column, FIG. 2)}
In another example of a mask inspection apparatus and method, a mask pattern defect is inspected in the following manner. The mask pattern that is to be inspected is two-dimensionally scanned with an electron beam to obtain mask pattern transmission electric signals. From these electric signals, a mask pattern signal corresponding to the shape of the mask pattern is obtained. This mask pattern signal is compared with the CAD (Computer Aided Design) signal corresponding to a CAD figure to be used for mask pattern fabrication, and based upon this comparison result, the mask pattern defect is inspected. {Refer to Patent Document 2: Japanese Unexamined Patent Publication No. 2002-71331 (p. 3, 49th line in left column to p. 4, 21st line in right column, FIG. 1)}
Another inspection uses a reticle (optical mask or photomask) and its layout method of the following type. For example, each of a plurality of shots constituted of a plurality of different chips is disposed on a reticle in such a manner that all or some of chips having the same pattern are aligned along a row or column direction or directions to inspect the mask. (Refer to Patent Document 3: Japanese Unexamined Patent Publication No. HEI-10-73916 (p. 3, 41st line in left column to p. 4, 3rd line, FIG. 1))

Exposure pattern or mask and inspection method and manufacture method for the same


A method for cancer cell detection including the steps of (a) staining an analyzed sample with at least first and second dyes, the dyes being selected such that the first dye better adheres to normal cells whereas the second dye better adheres to cancer cells; (b) spectrally imaging the sample through an optical device being optically connected to an imaging spectrometer thereby obtaining a spectrum of each pixel of the sample; (c) based on the spectra, evaluating concentrations of the first and second dyes for each of the pixels; and (d) based on the concentrations detecting the presence of cancer cells in the sample.

The present invention relates to spectral methods in general and, more particularly, to spectral imaging methods for cancer cell detection. The method of the present invention is based upon new analysis approach of old cell staining procedures. In particular the method of the present invention is based upon determination of a ratio between two dyes used to stain cells and a presentation of the results in a meaningful way. Apparently, cancer and non-cancer cells present different ratios and therefore the method is applicable for cancer cell detection.
A spectrometer is an apparatus designed to accept light, to separate disperse) it into its component wavelengths, and measure the lights spectrum, that is the intensity of the light as a function of its wavelength. An imaging spectrometer is one that collects incident light from a scene and measures the spectra of each pixel (i.e., picture element) thereof.
Spectroscopy is a well known analytical tool which has been used for decades in science and industry to characterize materials and processes based on the spectral signatures of chemical constituents. The physical basis of spectroscopy is the interaction of light with matter. Traditionally, spectroscopy is the measurement of the light intensity emitted, transmitted, scattered or reflected from a sample, as a function of wavelength, at high spectral resolution, but without any spatial information.
Spectral imaging, on the other hand, is a combination of high resolution spectroscopy and high resolution imaging (i.e., spatial information). Most of the works so far described concern either obtaining high spatial resolution information from a biological sample yet providing only limited spectral information, for example, when high spatial resolution imaging is performed with one or several discrete band-pass filters [See, Andersson-Engels et al. (1990) Proceedings of SPIE--Bioimaging and Two-Dimensional Spectroscopy, 1205, pp. 179-189], or alternatively, obtaining high spectral resolution (e.g., a full spectrum), yet limited in spatial resolution to a small number of points of the sample or averaged over the whole sample [See for example, U.S. Pat. No. 4,930,516, to Alfano et al.].
Conceptually, a spectral bio-imaging system consists of (i) a measurement system, and (ii) an analysis software. The measurement system includes all of the optics, electronics and the manner in which the sample is illuminated (e.g., light source selection), the mode of measurement (e.g., fluorescence or transmission), as well as the calibration best suited for extracting the desired results from the measurement. The analysis software includes all of the software and mathematical algorithms necessary to analyze and display important results in a meaningful way.
Spectral imaging has been used for decades in the area of remote sensing to provide important insights in the study of Earth and other planets by identifying characteristic spectral absorption features. However, the high cost, size and configuration of remote sensing spectral imaging systems (e.g., Landsat, AVIRIS) has limited their use to air and satellite-born applications [See, Maymon and Neeck (1988) Proceedings of SPIE--Recent Advances in Sensors, Radiometry and Data Processing for Remote Sensing, 924, pp. 10-22; Dozier (1988) Proceedings of SPIE--Recent Advances in Sensors, Radiometry and Data Processing for Remote Sensing, 924, pp. 23-30].
There are three basic types of spectral dispersion methods that might be considered for a spectral bio-imaging system: (i) spectral grating or prism, (ii) spectral filters and (iii) interferometric spectroscopy. As will be described below, the latter is best suited to implement the method of the present invention, yet as will be appreciated by one ordinarily skilled in the art, grating, prism and filters based spectral bio-imaging systems may also be found useful.
In a grating or prism (i.e., monochromator) based systems, also known as slit-type imaging spectrometers, such as for example the DILOR system: [see, Valisa et al. (September 1995) presentation at the SPIE Conference European Medical Optics Week, BiOS Europe '95, Barcelona, Spain], only one axis of a CCD (charge coupled device) array detector (the spatial axis) provides real imagery data, while a second (spectral) axis is used for sampling the intensity of the light which is dispersed by the grating or prism as function of wavelength. The system also has a slit in a first focal plane, limiting the field of view at any given time to a line of pixels. Therefore, a full image can only be obtained after scanning the grating (or prism) or the incoming beam in a direction parallel to the spectral axis of the CCD in a method known in the literature as line scanning. The inability to visualize the two-dimensional image before the whole measurement is completed, makes it impossible to choose, prior to making the measurement, a desired region of interest from within the field of view and/or to optimize the system focus, exposure time, etc. Grating and prism based spectral imagers are in use for remote sensing applications, because an airplane (or satellite) flying over the surface of the Earth provides the system with a natural line scanning mechanism.
It should be further noted that slit-type imaging spectrometers have a major disadvantage since most of the pixels of one frame are not measured at any given time, even though the fore-optics of the instrument actually collects incident light from all of them simultaneously. The result is that either a relatively large measurement time is required to obtain the necessary information with a given signal-to-noise ratio, or the signal-to-noise ratio (sensitivity) is substantially reduced for a given measurement time. Furthermore, slit-type spectral imagers require line scanning to collect the necessary information for the whole scene, which may introduce inaccuracies to the results thus obtained.
Filter based spectral dispersion methods can be further categorized into discrete filters and tunable filters. In these types of imaging spectrometers the spectral image is built by filtering the radiation for all the pixels of the scene simultaneously at a different wavelength at a time by inserting in succession narrow band filters in the optical path, or by electronically scanning the bands using acousto-optic tunable filters (AOTF) or liquid-crystal tunable filter (LCTF), see below. Similarly to the slit type imaging spectrometers equipped with a grating or prism as described above, while using filter based spectral dispersion methods, most of the radiation is rejected at any given time. In fact, the measurement of the whole image at a specific wavelength is possible because all the photons outside the instantaneous wavelength being measured are rejected and do not reach the CCD.
Tunable filters, such as AOTFs and LCTFs have no moving parts and can be tuned to any particular wavelength in the spectral range of the device in which they are implemented. One advantage of using tunable filters as a dispersion method for spectral imaging is their random wavelength access; i.e., the ability to measure the intensity of an image at a number of wavelengths, in any desired sequence without the use of filter wheels. However, AOTFs and LCTFs have the disadvantages of (i) limited spectral range (typically, .lambda..sub.max =2.lambda..sub.min) while all other radiation that falls outside of this spectral range must be blocked, (ii) temperature sensitivity, (iii) poor transmission, (iv) polarization sensitivity, and (v) in the case of AOTFs an effect of shifting the image during wavelength scanning, demanding careful and complicated registration procedures thereafter.
All these types of filter and tunable filter based systems have not been used successfully and extensively over the years in spectral imaging for any application, because of their limitations in spectral resolution, low sensitivity, and lack of easy-to-use and sophisticated software algorithms for interpretation and display of the data.
A method and apparatus for spectral analysis of images which have advantages in the above respects was disclosed in U.S. patent application Ser. No. 08/392,019 to Cabib et al., filed Feb. 21st, 1995, now U.S. Pat. No. 5,539,517, issued Jul. 23, 1996, which is incorporated by reference as if fully set forth herein, with the objective to provide a method and apparatus for spectral analysis of images which better utilizes all the information available from the collected incident light of the image to substantially decrease the required frame time and/or to substantially increase the signal-to-noise ratio, as compared to the conventional slit- or filter type imaging spectrometer and does not involve line scanning. According to this invention, there is provided a method of analyzing an optical image of a scene to determine the spectral intensity of each pixel thereof by collecting incident light from the scene; passing the light through an interferometer which outputs modulated light corresponding to a predetermined set of linear combinations of the spectral intensity of the light emitted from each pixel; focusing the light outputted from the interferometer on a detector array, scanning the optical path difference (OPD) generated in the interferometer for all pixels independently and simultaneously and processing the outputs of the detector array (the interferograms of all pixels separately) to determine the spectral intensity of each pixel thereof. This method may be practiced by utilizing various types of interferometers wherein the OPD is varied to build the interferograms by moving (e.g., rotating, translating) the entire interferometer, an element within the interferometer, or the angle of incidence of the incoming radiation. In all of these cases, when the scanner completes one scan of the interferometer, the interferograms for all pixels of the scene are completed.
Apparatuses in accordance with the above features differ from the conventional slit- and filter type imaging spectrometers by utilizing an interferometer as described above, therefore not limiting the collected energy with an aperture or slit or limiting the incoming wavelength with narrow band interference or tunable filters, thereby substantially increasing the total throughput of the system. Thus, interferometer based apparatuses better utilize all the information available from the incident light of the scene to be analyzed, thereby substantially decreasing the measuring time and/or substantially increasing the signal-to-noise ratio (i.e., sensitivity). The sensitivity advantage that interferometric spectroscopy has over the filter and grating or prism methods is known in the art as the multiplex or Fellgett advantage [see, Chamberlain (1979) The principles of interferometric spectroscopy, John Wiley and Sons, pp. 16-18 and p. 263].
Consider, for example, the "whisk broom" design described in John B. Wellman (1987) Imaging Spectrometers for Terrestrial and Planetary Remote Sensing, SPIE Proceedings, Vol. 750, p. 140. Let n be the number of detectors in the linear array, m.times.m the number of pixels in a frame and T the frame time. The total time spent on each pixel in one frame summed over all the detectors of the array is nT/m.sup.2. By using the same size array and the same frame rate in a method according to the invention described in U.S. Pat. No. 5,539,517, the total time spent summed over all the detectors on a particular pixel is the same, nT/m.sup.2. However, whereas in the conventional grating or prism method the energy seen by every detector at any time is of the order of 1/n of the total, because the wavelength resolution is 1/n of the range, in a method according to the invention described in U.S. patent application Ser. No. 08/392,019 the energy is of the order of unity, because the modulating function is an oscillating function (e.g., sinusoidal (Michelson) or similar periodic function such as low finesse Airy function with Fabry-Perot) whose average over a large OPD range is 50%. Based on the standard treatment of the Fellgett advantage (or multiplex advantage) described in interferometry textbooks [for example, see, Chamberlain (1979) The principles of interferometric spectroscopy, John Wiley and Sons, pp. 16-18 and p. 263], it is possible to show that devices according to this invention have measurement signal-to-noise ratios which are improved by a factor of n.sup.0.5 in the cases of noise limitations in which the noise level is independent of signal (system or background noise limited situations) and by the square root of the ratio of the signal at a particular wavelength to the average signal in the spectral range, at wavelengths of a narrow peak in the cases the limitation is due to signal photon noise. Thus, according to the invention described in U.S. Pat. No. 5,539,517, all the required OPDs are scanned simultaneously for all the pixels of the scene in order to obtain all the information required to reconstruct the spectrum, so that the spectral information is collected simultaneously with the imaging information. This invention can be used with many different optical configurations, such as a telescope for remote sensing, a microscope for laboratory analysis, fundus cameras for retinal imaging, fiber optics and endoscopes for industrial monitoring and medical imaging, diagnosis, therapy and others.
In a continuation application (U.S. patent application Ser. No. 08/571,047 to Cabib et al., filed Dec. 12, 1995, which is incorporated by reference as if fully set forth herein) the objective is to provide spectral imaging methods for biological research, medical diagnostics and therapy, which methods can be used to detect spatial organization (i.e., distribution) and to quantify cellular and tissue natural constituents, structures, organelles and administered components such as tagging probes (e.g., fluorescent probes) and drugs using light transmission, reflection, scattering and fluorescence emission strategies, with high spatial and spectral resolutions. In U.S. patent application Ser. No. 08/571,047, the use of the spectral imaging apparatus described in U.S. Pat. No. 5,539,517 for interphase fluorescent in situ hybridization of as much as six loci specific probes (each loci located on a different chromosome) was demonstrated, as well as additional biological and medical applications.
Spectral bio-imaging systems are potentially useful in all applications in which subtle spectral differences exist between chemical constituents whose spatial distribution and organization within an image are of interest. The measurement can be carried out using virtually any optical system attached to the system described in U.S. Pat. No. 5,539,517, for example, an upright or inverted microscope, a fluorescence microscope, a macro lens, an endoscope or a fundus camera. Furthermore, any standard experimental method can be used, including light transmission (bright field and dark field), auto-fluorescence and fluorescence of administered probes, etc.
Fluorescence measurements can be made with any standard filter cube (consisting of a barrier filter, excitation filter and a dichroic mirror), or any customized filter cube for special applications, provided the emission spectra fall within the spectral range of the system sensitivity. Spectral bio-imaging can also be used in conjunction with any standard spatial filtering method such as dark field and phase contrast, and even with polarized light microscopy. The effects on spectral information when using such methods must, of course, be understood to correctly interpret the measured spectral images.
In U.S. patent application Ser. No. 08/824,234, filed Mar. 25, 1997, which is incorporated by reference as if fully set forth herein, a method of cell classification is described with the objective of obtaining morphometric data of analyzed cells based on specific spectral signatures of their organelles or constituents. According to this method spectral data is collected from every pixel of an analyzed cell and the spectra thus obtained are each compared to a library of spectra in what is known in the art as a classification procedure. Thereafter, each pixel is given a color according to the classification results. As a result, a detailed and clear morphometric image is obtained and morphometric data can be easily extracted. Since cancer cells are known to go through characterizing morphometric changes during their development, the method can be used to differentiate between cancer and normal cells, to determine the stage of cancer, etc., nearly automatically and in a highly objective manner.
For example, in the evaluation of infiltrating breast carcinomas, ductal and lobular carcinomas may present similar histological appearances [Azzopardi J G, Chepick O F, Hartmann W H, Jafarey N A, Lombart-Bosch A, Ozello L (1982). The World Health Organization histological typing of breast tumors. 2nd ed. Am J Clin Pathol 78:806-816]. Some quantitative histopathological variables have been identified by morphological methods as an aid to the differentiation between ductal and lobular carcinomas [Ladekarl M and Sorensen F B (1993). Quantitative histopathological variables in in situ and invasive ductal carcinoma of the breast. AMPIS 101(12):895-903]. The attempts to grade and to differentiate, or in other words to classify the tumors have been based mainly on nuclear morphology and chromatin structure [Ladekarl M and Sorensen F B (1993). Quantitative histopathological variables in in situ and invasive ductal carcinoma of the breast. AMPIS 101(12):895-903; Cornelisse C J, de Konig H R, Moolenaar A J (1984). Image and flow cytometric analysis of DNA content in breast cancer; relation to estrogen receptor content and lymph node involvement. Anal Quant Cytol Histol 4:9-18; Stenkvist B, Westman-Naeser S, Holmquist J (1978). Computerized nuclear morphology as an objective method for characterizing human cancer cell populations. Cancer Res 38:4688-4977; Dawson A E, Austin R E, Weinberg D S (1991). Nuclear grading of breast carcinoma by image analysis. Classification by multivariate and neural network analysis. Am J Clin Pathol 95:S29-S37]. Morphometric classification of other tumor types, such as, but not limited to leukemias, lymphomas, sarcomas and other carcinomas [see, for example, Clarke A M, Reid W A and Jack A S (1993) Combined proliferating cell nuclear antigen and morphometric analysis in the diagnosis of cancerous lymphoid infiltrates. J. Clin. Pathol. 46:129-134] are also vastly implemented both in research and in medical practice.
Nevertheless, as was recently published following an NIH workshop which evaluated the reliability of histopathological diagnosis by the best pathologists in the field of cancer diagnostics, there is a discordance among expert pathologists in the diagnosis of neoplasm. Based on this workshop, it was concluded that histopathological decision making is 100% subjective, regardless of the origin of specimen and that this state of affairs in histopathological diagnosis is not confined to a specific tumor, but is applicable to differential diagnosis in every organ. These conclusions were published in an editorial by A Bernard Ackerman (1996) entitled "Discordance among expert pathologists in diagnosis of melanocytic neoplasm", in Human pathology 27:1115-1116.
Although, spectrally resolved and therefore objective morphometric analysis provides an excellent tool for cancer cell detection, other objective procedures may prove more suitable in some cases, either alone or in combination with morphometric analysis or other cancer cell detection methods.
There is thus a widely recognized need for, and it would be highly advantageous to have a spectral method for determining a ratio between dyes used to stain cells, which can be used for objective cancer cell detection.


A surgical microscope objective has an adjustable focal intercept and defines an optical axis. The objective has an objective body wherein a negative member is fixed and in which a positive member can be displaced. The negative member faces toward the object and has a lateral edge. The positive member is held in a frame, which is guided on a first guiding section formed on the objective body so it can move in the direction of the optical axis using a first guiding part. The positive member is guided on a second guiding section, which is formed on the objective body, using a second guiding part connected to the frame of the positive member and movable between the lateral edge of the negative member and the objective body. The second guiding part is offset from the first guiding part in the direction of the optical axis facing the negative member.

Such a surgical microscope objective is known from U.S. Pat. No. 7,554,723. It describes a surgical microscope which includes an adjustable objective held in a surgical microscope main body. The objective has a lens group with negative refractive power (negative member) and has a movable lens group, the refractive power of which is positive (positive member). The adjustable objective allows the adjustment of the focal intercept, that is, the distance of the object plane from the front surface of the negative member.

Surgical microscope objective having an adjustable focal intercept


An amplifier comprises a first transistor for providing signal amplification, and a second transistor for providing distortion compensation, wherein said second transistor is capable of simultaneously providing more than one form of distortion compensation. A first signal path passes through a first transistor to provide signal gain, and a second signal path passes through a second transistor to provide distortion compensation. The amplifier is capable of providing pre-distortion compensation, post-distortion compensation and cubic-polynomial distortion compensation.

The RF amplifier is an important component of a mobile communications handset such as a mobile phone. The increasing popularity of mobile phones, and the developments in the industry, such as the provision of multiple functions in mobile phones and the ever increasing number of subscribers, places great demands on the design of the mobile phone.
Key design features in a RF amplifier for a mobile phone are power consumption and linearization. In particular, battery power and battery life is a constant issue in mobile phones and power-effective solutions are constantly needed. This is particularly so with the incorporation into mobile phones of other functions such as cameras and the use of large LCD displays. The incorporation of these other functions and features into mobile phones also places great demands on space on the printed circuit board. Furthermore, the linearity of the input-output characteristics of the RF amplifier is very important to minimize adjacent channel interference (which can cause crosstalk in cellular networks). The ideal RF amplifier in a mobile phone would therefore be highly efficient, power effective, with good linearity characteristics, and would occupy minimum space on the printed circuit board. Often, however, there is a trade-off between linearity and power efficiency.
FIG. 1 shows a conventional RF amplifier circuit. Under large signal conditions, the base-emitter voltage (VBE) of the transistor will drop with the increase in the rectified DC current and the decrease of the transconductance resulting in severe non-linear distortion in signal amplitude.
Various linearization techniques have been proposed to overcome or mitigate this problem. These include harmonic feedback, feed-forward, base-band feed-forward, and pre-distortion techniques. Each of these prior techniques has its own advantages and disadvantages.
For example, generally speaking, harmonic feedback from the output port can reduce intermodulation distortion (IMD) products by the order of 20 dB, but it can also cause serious gain reduction and instability problems.
Feed-forward linearization provides good distortion improvement and broadband operation, but requires complex, bulky and expensive control circuits which prevent the full use of active devices and limits the use if this technique to the base-station level. Even after a number of years of development the typical efficiency of feed-forward techniques is only about 8% at best and this figure is unlikely to be improved upon in the near future.
Pre-distortion techniques can achieve a much higher efficiency of about 15% and linearization using series or parallel diode pre-distorters offers a relatively compact and low-cost approach to improving the linearity of the RF amplifier. However, a suitable match of the non-linear transfer characteristics from the pre-distorters is always required and in practice limits the degree of cancellation to below 10 dB.
More recently several methods have been proposed based on the exploitation of second-order signals. These techniques are based on an additional injection of either the second-order harmonic or difference frequency signals to interact with the fundamentals and can give more than 25 dB in cancellation. However, precise gain and phase adjustments are still required which can make these approaches impractical. In addition, since auxiliary predistortion circuitry is needed there is an increase in complexity and a reduction in efficiency.


A string tensioning system is provided for ball rackets, in particular for tennis rackets and squash rackets. The string tensioning system, formed by a string tensioning member (1), is insertable between the substantially parallel disposed strings (2 to 7) of a ball racket (19) such that these substantially parallel disposed strings are lifted up and down, respectively, relative to their original common plane and relative to each neighboring string of a parallel direction. Thereby the strings are retensioned and the original stringing hardness is recovered.

1. Field of the Invention
The invention relates to a string tensioning part for stringed ball rackets, in particular for tennis rackets and squash rackets.
2. Brief Description of the Background of the Invention Including Prior Art
Frequently, there exists a desire in connection with tennis rackets to change the stringing hardness and, in fact, in particular to increase the stringing hardness.
This may be the case, for example, where the hardness of the balls is changed. In a tennis tournament, for example, the players always use new balls, which are substantially harder than the balls normally used. However, this leads to the situation where, in case of an identical expenditure of force, the balls fly farther and, as a result, pass the baseline more frequently. In view of the short time available, an adaptation of the mode of play to the changed situation, is in most cases no longer possible.
As is known, the hardness changes in the course of time in connection with older stringing of rackets. Depending on the material and original hardness, this occurs at different time lapses. The stringing hardness can thereby decrease to such an extent that, based on the resulting trampoline effect, a controlled game is no longer possible.
The hardness decreases in case of catgut stringing, if the strings have become humid. Even in case of an otherwise completely perfect and hardly worn stringing, an expensive restringing is required.
The hardness decreases particularly rapidly in case of a first stringing of a new frame. It can occur in such cases that, in case of an original hardness of 25 kg, after one week there remains a hardness of only 20 kg.
Finally, it is desirable, in case of different floor surfaces of the courts, that the stringing hardness be adapted in each case. A "fast" hall floor surface, for example, requires a harder stringing.
Special tennis rackets have already become known, where the tension of the center longitudinal strings can be changed by turning and rotating of a set screw at the handle end. Such rackets are, however, relatively expensive and have not found wide-spread acceptance.
There are further known plastic platelets, which are inserted between the crossing points of the longitudinal and cross strings. These platelets are to decrease the wear generated by the friction of the strings at the crossing points. The platelets effect, in case of a large-surface application, also a slight increase of the stringing hardness. However, the time-consuming insertion of a large number of such platelets in order to achieve a noticeable increase in the tensioning is a serious disadvantage.

String tensioning system for ball racket


A method of producing a low iron loss grain oriented silicon steel sheet which generates improved magnetostrictive characteristics when used as a stacked iron core and low noise when used in a stacked transformer, as well as superior shape characteristics. A grain oriented finish-annealed silicon steel sheet is coated with an insulating film. The surface of the grain oriented silicon steel sheet is irradiated with an electron beam along a multiplicity of spaced paths so as to refine the magnetic domains. The irradiation with the electron beam is conducted continuously or intermittently along a waveform path on the surface of the grain oriented silicon steel, and the wave-form, such as a zigzag form, has a period length much smaller than the width of the grain oriented silicon steel sheet, and line interconnecting the centers of successive waves extends substantially perpendicularly to the direction of rolling of the grain oriented silicon steel sheet.

1. Field of the Invention
This invention relates to a method of producing, by employing electron beam irradiation, a low iron loss grain oriented silicon steel sheet which generates improved magnetostrictive characteristics when used as a stacked iron core and low noise when used in a stacked transformer, as well as superior shape characteristics.
Grain oriented silicon steel sheets are used mainly as the core materials of electrical components such as transformers or the like. In general, grain oriented silicon steel sheets are required to have such magnetic characteristics that the magnetic flux density (represented by B.sub.8) is high and that the iron loss (represented by W.sub.17/50) is low. It is also required that the surfaces of the steel sheet have insulating films with excellent surfaces.
The energy crisis that the world now faces requires reduction of losses of electrical power. This has given rise to a strong demand for grain oriented silicon steel sheets having reduced iron loss.
2. Description of the Related Art
Grain oriented silicon steel sheets have undergone various treatments for improving magnetic characteristics. For instance, treatment has been conducted to attain a high degree of concentration of the secondary recrystallization grains in the Goss orientation. It has also been attempted to form, on a forsterite film formed on the surface of the steel sheet, an insulating film having a small thermal expansion coefficient so as to impart a tensile force to the steel sheet. Thus, grain oriented silicon steel sheets have been produced through complicated and diversified processes which require very strict controls.
Among these treatments, one major technique for reducing iron loss of grain oriented steel sheet has been the improvement of the aggregation structure of Goss orientation secondary recrystallization grains.
Hitherto, as a method for controlling the secondary recrystallization grains, preferential growth of Goss orientation secondary recrystallization grains has been obtained by using primary recrystallization grain growth inhibiting agents such as AlN, MnS and MnSe, known as "inhibitors".
In recent years various techniques other than metallurgical measures have been developed for controlling secondary recrystallization grains for reducing iron loss. For instance, techniques for reducing iron loss by irradiation with laser beams have been proposed in IRON AND STEELS, by Tadashi Ichiyama 69(1983), P895, Japanese Patent Publication No. 57-2252, Japanese Patent Publication No. 57-53419, Japanese Patent Publication No. 58-26405 and Japanese Patent Publication No. 58-26406. Methods also have been proposed which employ plasma irradiation as disclosed, for example, in Japanese Patent Laid-Open No. 62-96617, Japanese Patent Laid-Open 62-151511, Japanese Patent Laid-Open No. 62-151516 and Japanese Patent Laid-Open No. 62-151517. In these methods local treatment is introduced into the steel sheet by irradiation of the steel sheet surface by laser beam or plasma, so as to refine the magnetic domains, thereby reducing iron loss.
These methods relying upon irradiation with laser beam or plasma, however, inevitably raise the cost of reducing iron loss, because the energy efficiency is as low as 5 to 20%.
Under these circumstances we have proposed a method in which an electron beam generated by electric power of high voltage and low current is locally and intermittently applied along the widthwise direction which intersects the rolling direction of the sheet, so as to forcibly introduce a coating film into the matrix iron. Such a method is disclosed, for example, in Japanese Patent Laid-Open No. 63-186826, Japanese Patent Laid-Open No. 2-118022 and Japanese Patent Laid-Open No. 2-277780.
This method exhibits very high energy efficiency, as well as high scanning speed, thus offering remarkably improved production efficiency as compared to known methods for refining magnetic domains.
The methods disclosed in our above-mentioned Japanese Patent Laid-Open specifications are directed to production of grain oriented silicon steel sheet for use as a material for a wound core transformer. In the production of a core of this kind, the wound core formed from a grain oriented steel sheet is subjected to stress-relieving annealing. Therefore, no substantial noise tends to be generated in the wound core transformer during operation of the transformer.
In contrast, a stacked transformer of that kind generates a high level of noise, requiring strong measures to be taken for reducing the noise.
In particular, the grain oriented steel sheets produced by the method proposed in the aforementioned Japanese Patent Laid-Open specification cannot be practically used in stacked transformers, due to high levels of noise.
Furthermore, these techniques are still unsatisfactory in that the products exhibit large fluctuations in magnetostrictive and sheet shapes, making it difficult to stably produce steel sheets having acceptable product quality.
On the other hand, U.S. Pat. No. 4,919,733 discloses a method for refining magnetic domains by irradiation with electron beams, wherein the surface energy density on the electron beam scan line is set to a level not lower than 60 J/in.sup.2 (9.3 J/cm.sup.2).
Steel sheets which have undergone this electron beam treatment, however, exhibit inferior noise characteristics when employed in a stacked transformer, as compared with steel sheets which have not undergone such electron beam treatment. In particular, the noise characteristics are extremely poor during operation of the transformer after the electron beam treatment has been conducted under the conditions mentioned above, as compared with sheets which have not undergone such treatment.
U.S. Pat. No. 4,915,750 proposes a method of producing a grain oriented silicon steel sheet for use as a material of a wound core transformer, employing refining of magnetic domains by irradiation with an electron beam. This method is directed only to the production of a wound core transformer as distinguished from a stacked transformer to which the present invention pertains and which suffers from the noise problem.

Method of producing low iron loss grain-oriented silicon steel sheet having low-noise and superior shape characteristics


A semiconductor storage device in which a pair of wiring lines extending in a first direction are arranged repeatedly with a predetermined pitch, comprising: a group of pair transistors in which a plurality of pair transistors is arranged according to a repetition unit with a predetermined pattern, the pair transistors composed of a MOS transistor of which a gate is connected to one line of the pair of wiring lines and of another MOS transistor of which a gate is connected to the other line of the pair of wiring lines, wherein the repetition unit of the group of pair transistors includes a plurality of the pair transistors such that two MOS transistors are adjacent to each other in the first direction, and at least one pair of pair transistors such that two MOS transistors are not adjacent to each other and diagonally opposite to each other.

1. Field of the Invention
The present invention relates to layout of a semiconductor storage device, and more particularly, to layout of a semiconductor storage device such as DRAM where a plurality of pair transistors is arranged repeatedly and densely in a sense amplifier.
2. Related Art
For example, DRAM that is a semiconductor storage device has sense amplifiers each of which detects potentials of a pair of bit lines to amplify a minute potential difference therebetween. The function of the sense amplifier is implemented by a pair of MOS (PMOS or NMOS) transistors (hereinafter, referred to as pair transistors). In other words, as shown in FIG. 8, it is necessary to configure a sense amplifier circuit using PMOS pair transistors T1 and T3 and NMOS pair transistors T2 and T4. In FIG. 8, with respect to a minute potential difference between a pair of bit lines BLT and BLN, it is assumed that one bit line BLT is at a relatively high potential. In this case, the NMOS transistor T4 is turned on by the bit line BLT connected to the gate, thereby pulling down the other bit line BLN connected to the drain to the ground potential. The bit line BLN at the ground potential turns on the PMOS transistor T1, thereby pulling up the bit line BLT to the power supply potential. When the bit lines BLT and BLN are in the inverse potential relationship, the operation inverse to the foregoing is carried out. According to the aforementioned operation, the sense amplifier amplifies the potential difference between a pair of bit lines BLT and BLN.
It is necessary to arrange a large number of sense amplifiers repeatedly on a chip corresponding to the number of bit lines, and therefore, the sense amplifiers have extremely significant effects on the chip size of DRAM. FIG. 9 shows a schematic layout diagram of the entire chip. The whole of DRAM is comprised of, for example, four banks 10, and a peripheral circuit area 11 is provided between the banks 10. In FIG. 9, the vertical direction is a direction in which the bit lines extend (hereinafter, referred to as a bit line direction), while the horizontal direction is a direction perpendicular to the bit line direction (hereinafter, referred to as a bit line perpendicular direction). Each of the banks 10 is divided into a plurality of memory cell areas 12 including a predetermined number of word lines and a predetermined number of bit lines.
On the lower side of FIG. 9 is shown an enlarged view of the memory cell area 12 and its surroundings. Around the memory cell area 12 are disposed a word driver area 13 that drives the word lines, and a sense amplifier area 14 comprised of the above-mentioned sense amplifiers. The sense amplifier area 14 thus needs to be provided as a division for each memory area 12, and therefore, has a considerable effect on the chip size. Accordingly, it is required to design the sense amplifier particularly in a small size among circuits constituting DRAM.
Further, considering the function of the sense amplifier as described above, since the minute potential difference to amplify corresponds to extremely small electric charge to be stored in a memory cell, in order to perform appropriate amplification, a pair of bit lines also require a design with balanced loads such as resistance and capacitance. When the resistance and capacitance of a pair of bit lines is not suitable, serious failures may occur such as inversion of data to store, and therefore, such a design is important that a pair of bit lines keep excellent balance therebetween.
As described above, in the design of a sense amplifier, the issue is a design in consideration of both improvements in characteristics and reduction in area. Constitution examples of the sense amplifier based on such an issue have conventionally been proposed. For example, one of the conventional constitution examples (see FIG. 6 in JP H11-307741) or another one of the conventional constitution examples (see FIG. 8 in JP 2000-22108) discloses a constitution such that two pair transistors in line, i.e. four transistors are arranged in the bit line direction in an area of a pair of bit lines, and that such a layout is repeated as a repetition unit according to a pitch of the bit lines. These constitutions of a sense amplifier are obtained by devising a layout in consideration of both effects of the improvements in characteristics and reduction in area.
However, according to reduction in memory cell size with progress of manufacturing techniques, the bit line pitch dependent on the memory cell size has been narrowed. In forming a transistor in a group of pair transistors as described above, considering physically providing the gate, drain/source diffusion layer, contact and the like, arrangements corresponding to narrowed bit line pitches have become difficult gradually.
For example, FIG. 10 is a view showing a layout of a group of pair transistors according to the conventional arrangement. In FIG. 10, eight transistors T1 to T8 constitute pair transistors T1 and T2, pair transistors T3 and T4, pair transistors T5 and T6, and pair transistors T7 and T8. A pair of bit lines (BL1T, BL1N and the like) is arranged for each pair of transistors. In the bit line perpendicular direction (horizontal direction as viewed in the figure) of the four pair transistors are formed a diffusion layer 201, each gate 202 in the shape of a ring, drain (diffusion layer) 203, source (diffusion layer) 204, wiring 205, upper wiring 206, contact 207 and through hole 208. With consideration given to the bit line pitch and required function elements, the layout provides a high dense arrangement under the most extreme conditions. If structural elements are configured with a bit line pitch narrower than the limit in FIG. 10, such a pitch becomes a factor to cause a short-circuit of different contacts in manufacturing. Further, decreasing the width and size of a structural element of a layout becomes factors of a break in wiring or blockage of the contact. Accordingly, it is difficult to make pair transistors finer in the configuration as shown in FIG. 10.
Meanwhile, FIG. 11 is a view showing a layout of a group of pair transistors provided with measures as described above. In FIG. 11, the same circuit as in FIG. 10 is comprised of a different layout, while combinations of four pairs are the same as in FIG. 10, i.e. pair transistors T1 and T2, pair transistors T3 and T4, pair transistors T5 and T6, and pair transistors T7 and T8 exist. In FIG. 11, with respect to four pairs of pair transistors for a pair of bit lines, the pair transistors are arranged in two stages in the bit line perpendicular direction, while being arranged also in two stages in the bit line direction. In this respect, the layout in FIG. 11 is different from that in FIG. 10. Such a constitution provides the pair transistors with the same combinations as in FIG. 10, while shifting the arrangement, eases physical limits such as wiring in the horizontal direction, intervals and the like in consideration of improvements in characteristics, and thus is an advantageous constitution in reduction in bit line pitch.
However, even when the constitution as shown in FIG. 11 is adopted, since the pair transistors have a two-stage structure in the bit line direction, it is inevitable that the size in the bit line direction is extremely increased as compared to the constitution of FIG. 10. In other words, the constitution of FIG. 11 still has the problem of having a significant effect on the chip size.


A polyolefin blend comprising:                (a) from 30 to 80 weight % of a low molecular weight copolymer comprising from 85 to 100 weight % of ethylene and from 15 to 0 weight % of one or more C4-8 alpha olefins having a density from 0.953 to 0.965 g/cm3 and a melt flow rate (2.16 kg 190° C.) from 0.1 to 20.0 g/10 minutes; and        (b) from 70 to 20 weight % of a high molecular weight copolymer comprising from 85 to 99.9 weight % of ethylene and from 15 to 0.1 weight % of one or more C4-8 alpha olefins having a density from 0.915 to 0.940 g/cm3 and a melt flow rate (21.6 kg 190° C.) from 0.05 to 5.0 g/10 minutes, said copolymer being prepared with a single site catalyst is useful in the preparation of pipe.

There are a large number of patents relating to blends of polyolefins and particularly blends of low density polyethylene and a high density polyethylene.
U.S. Pat. No. 5,306,775 issued Apr. 26, 1994 to Martin et al., assigned to Phillips Petroleum Company discloses a blend of comprising from 70 to 30 weight % of a low molecular weight ethylene homopolymer having a density greater than 0.960 g/cm3 and melt index (2.16 kg, 190° C.) greater than 30 gm per 10 minutes made in the presence of a chromium catalyst and from 30 to 70 weight % of a high molecular weight ethylene copolymer having a density less than 0.955 g/cm3 and a high load melt index (21.6 kg 190° C.) from 0.1 to 50 g/10 minutes made in the presence of a titanium chloride based catalyst system. The reference teaches away from the present invention in that the chrome catalyst component is a homopolymer having a higher density and a significantly higher melt index than those of the present invention.
WO 2001/005852 filed Jul. 15, 1999 in the name of Van Dun, Jozef et al., assigned to Dow Global Technologies Inc. discloses a polymer blend composition comprising; (A) an ethylene homopolymer in an amount of from 1 to 99 percent by weight based on the combined weight of components (A) and (B), having a ratio of Mw/Mn (polydispersity) (as measured by GPC) greater than about 2.5, a density which satisfies the following inequality; density (g/cm3)>0.9611+0.0058 log I2−0.00128] log2 I2; and an Mw/Mn ratio which satisfies the following inequality; Mw/Mn≦11.67 log [Mw−43.67;] and (B) an ethylene homopolymer other than one of component A having the identical properties or an ethylene alpha olefin copolymer in an amount of from 1 to 99 percent by weight based on the combined weight of components (A) and (B). The reference teaches away from the present invention in that two homopolymers are not present and no component in the present invention has a density greater than 0.960 g/cm3.
U.S. Pat. No. 6,350,814 issued Feb. 26, 2002 to Bauer et al., assigned to Basell Polyolefine GmbH teaches a blend of a polyethylene made using a metallocene catalyst and a polyethylene made using a Ziegler Natta or Phillips catalyst. The polyethylene made using the metallocene catalyst has a density from 0.91 to 0.93 g cm3 and the polyethylene made using the Ziegler Natta or Phillips catalyst has a density from 0.930 to 0.945 g/cm3. There is no component in the blend having a density greater than 0.953 g/cm3.
U.S. Pat. No. 6,245,867 issued Jun. 12, 2001 to Debras, assigned to Fina Research S.A. teaches a process to prepare a blend of polyethylenes made using tandem or sequential reactors. An ethylene homopolymer is made using the chrome based catalyst and an ethylene homopolymer or copolymer is made in the second reactor using either a Ziegler Natta catalyst or a metallocene catalyst. The polymers are not broadly described in the specification. However, the examples give some of the properties of the different components. The ethylene homopolymer made with the chrome based catalyst has a density from 0.964 g/cc this is greater than the density for the ethylene polymer of the present invention made using a chrome catalyst. The density of the ethylene copolymer made using the Ziegler Natta catalyst is above 0.940 g/cc which is greater than the density for the ethylene copolymer of the present invention made using a metallocene catalyst. The reference teaches away from the subject matter of the present invention.
Canadian Patent application 2,078,309 laid open Mar. 19, 1993 in the name of Martin et al., assigned to Phillips Petroleum Company teaches a polyethylene blend comprising less than or equal to 35 weight % of a high molecular weight polyethylene prepared in the presence of a Ziegler Natta titanium based catalyst having a HLMI from 0.2 to 25 g/10 minutes, a density from 0.910 to 0.940 g/cc and a polydispersity less than about 10 and greater than 65 weight % of a low molecular weight polyethylene prepared in the presence of a chrome based catalyst having a density from 0.945 g/cc to 0.980 g/cc, a melt index from 0.1 to 5 g/10 minutes and a polydispersity greater than or equal to about 6.
The present patent application seeks to provide a blend of a higher density low molecular weight polyethylene prepared in the presence of the chromium or a Ziegler Natta type catalyst and a lower density higher molecular weight polyethylene prepared in the presence of a single site type catalyst.

This patent is subject to a terminal disclaimer.


A system and method for in-field near infrared spectroscopy (NIRS) analysis of rubber and resin concentrations a guayule plant is provided. The system includes a wagon or other vehicle with the NIRS device mounted on the wagon. A computer or processor electrically coupled to the NIRS device is also housed within an area or extension of the wagon. During measurement of a guayule plant in the field, a guayule plant covering is placed over the guayule plant and a light shield coupled to the NIRS device is inserted into an opening on the guayule plant covering. The NIRS device is configured to perform a reading of the guayule plant within the plant covering and communicate results of the reading to the computer. A calibration equation is then preferably applied to the guayule plant readings to produce the rubber and resin concentrations of the guayule plant.

Near Infrared Spectroscopy (NIRS) is a method that provides multi-constituent analysis of a variety of matrices. Recently, NIRS has gained wide acceptance within many industries for raw material testing, product quality control, and process monitoring. Within the agricultural community, NIRS has wide use both in research (measuring quality parameters of individual plants or plats), and in quality control and measurement of many commodities.
The NIRS region of the electromagnetic spectrum is defined as the wavelength range of 780-2526 nm, which corresponds to the wave number range from 12820-3959 per cm. The most prominent absorption bands occurring in the NIRS region are related to overtones and combinations of fundamental vibrations of —CH, —NH, —OH (and —SH) functional groups. NIRS absorption bands are typically broad, overlapping, and 10-100 times weaker than their corresponding fundamental mid-IR absorption bands. These characteristics restrict sensitivity and require chemometric data processing to relate spectral information to sample properties. The low absorption coefficient, however, permits high penetration depth. With such broad, overlapping peaks, the spectra are very complex. It is often difficult to assign specific features of the spectrum to a specific chemical. Therefore, sophisticated software, using multivariate calibration techniques, is required. A calibration equation must be developed using careful sampling, analyzing in the best traditional method, and application of multivariate calibration techniques.
NIRS has previously been utilized to measure the composition of the guayule plant, particularly the rubber and resin concentrations. The guayule plant is well known as a producer of latex or rubber. Previously, rubber and resin concentrations in guayule were measured by slowly and carefully grinding portions of the plant into a very uniform substrate. This uniform substrate, often difficult to achieve, was then analyzed with NIRS focused on one or two individual wavelengths, rather than the entire NIR spectrum. Another previous NIRS-based measured of guayule required the guayule to be dried and finely ground.

System and apparatus for analysis of a guayule plant in situ


High throughput methods and kits for single nucleotide polymorphism (SNP) genotyping are provided. The methods involve utilizing nested PCR amplification reactions which produce sequencible and ligatible structures. An outer PCR primer set amplifies the SNP, and an inner PCR primer set amplifies a portion of the DNA amplified by the outer primer set, but does not amplify the SNP itself. The inner and outer primers may reaction include non-target common domain sequences, and the inner primer common domain sequences may comprise digestion restriction endonuclease recognition sites. The design of the inner primer set allows precise tailoring of the sequencible and ligatible structures with respect to length and base composition.

1. Field of the Invention
The invention generally relates to single nucleotide polymorphism (SNP) genotyping. In particular, the invention provides a method for SNP genotyping based on a nested PCR design that creates structures directly suitable for both DNA sequencing and ligation reactions.
2. Background of the Invention
With the completion of the rough draft of the human genome, over 1.5 million non-redundant SNPs have been identified and mapped by the publicly funded project and the SNP consortium (Sachidanandam et al, 2001). The availability of such a large number of SNPs has prompted great interest in SNP related applications and research, such as large scale linkage, genomic association and pharmarcogenetic studies.
SNPs entered the central arena of genetics due to their abundance (Collins et al, 1997; Sachidanandam et al, 2001), stability (Sachidanandam et al, 2001) and the relative ease (Kwok 2000; Shi 2001; Syvanen 2002) with which they are genotyped. The targets of SNP genotyping are normally small pieces of DNA, ranging from 150-300 base pairs. Based on the SNP consortium report, the average SNP density in the human genome appears to be greater than 1 SNP/KB. This high density provides a tool to analyze genomic structure at very high resolution, and to establish a direct correlation between genetic coding variation and biological function. The relative stability of SNPs (compared to mini-and micro-satellite markers) in evolution makes it simpler to carry out this task.
Although SNP genotyping is generally easier than microsatellite genotyping, and despite the rapid and significant advances in SNP genotyping technology in the last few years, major issues remain unsolved. Whereas only a few years ago, the main concern was the need to have a large number of SNPs available, currently the most urgent issues are increasing throughput and decreasing cost. For example, for large scale applications as projected by Kruglyak (1999) and Long (1999), a reasonable cost would be <$0.10/genotype, or else large-scale projects will become prohibitively expensive. To fulfill the goals of understanding the genetics of complex traits and common diseases, cost-effective and higher throughput methodology in SNP genotyping is essential.
Typically, genotyping protocols have three components: target amplification, allelic discrimination and product detection and identification. They are normally executed sequentially, but can be processed in a single step reaction, depending on the means which are used for allele discrimination and signal detection. Such single step procedures are well-suited to automation, but are not necessarily effective in terms of cost and throughput.
PCR is the dominant procedure utilized for target amplification. As is widely known, a PCR can readily amplify targets present in lower copy number by a factor of 108 or more. With respect to allele discrimination, all SNP genotyping technologies currently available are based on mechanisms involving one or more of the following: DNA polymerase, hybridization and DNA ligase. DNA polymerase methods include single base extension (SBE) (Armstrong, 2000; Barta 2001; Bray 2001; Cai 2001; Chen 1997; Chem 1999; Chen 1998; Chen 1997; Chen 1997; Fan 2000; Lindblad-Toh 2000; Nikiforov 1994; Pastinen 1996; Pastinen 2000; Ross, 1998; Sauer 2000; Syvanen 1999; Ye 2001), de novo sequencing including pyrosequencing (Nordstrom 2000; Ronaghi 2001), allele-specific PCR and extension (Germer 1999; Myakishev 2001; Pastinen 2000), and structure-specific cleavage (Fors 2000). Of these different forms, SBE is the most widely used and has been adapted for many different detection platforms. Hybridization is also widely used in several different forms, including dynamic hybridization (Prince 2001), and is the primary method currently used in all microarray detection formats. DNA ligase methods are based on the ability of DNA ligase to join the ends of two oligonucleotides annealed next to each other on a template (Tong 2000; Tong1999). Two oligonucleotides can be designed to anneal to both sides of a SNP site, and by detecting the formation of ligation product, the genotype of a target can be inferred (Chen 1998; Delahunty 1996; Gerry 1999; Iannone 2000).
Once a target DNA sequence has been amplified and the allelic variants discriminated, the next step in a generic genotyping protocol is to detect and identify the allele specific products. Detection mechanisms vary greatly, from simple fluorescence intensity (Armstrong 2000; Cai 2000; Chen 1998; Chen 1997; Delahunty 1996; Dubertret 2001; Fan 2000; Fergusoon 2000; Fors 2000; Germer 1999; Germer 2000; Gerry 1999; Iannone 2000; Lindblad-Toh 2000; Lindroos 2001; Marras 1999; Medintz 2001; Myakishev 2001; Nikiforov 1994; Pastinen 1997; Pastinen 2000; Prince 2001; Syvanen 1999; Ye 2001) to very precise mass (Bray 2001; Ross 1998; Sauer 2000) or electric charge (Gilles 1999; Woolley 2000) measurement. The detection mechanisms roughly fall into two categories: homogeneous and solid phase mediated detection. All homogeneous detection platforms depend on measuring fluorescence intensities and their change during and/or after reactions. One common feature among homogeneous approaches is that they do not require any separation/purification prior to signal acquisition, making them amenable to automation. Solid support techniques include flow cytometry genotyping (Armstrong 2000; Cai 2000; Ye 2001), zip-code microarrays (Fan 2000; Gerry 1999), and mass spectrometry genotyping (Bray 2001; Ross 1998; Sauer 2000). Using a solid support in the detection step may potentially increase throughput and reduce cost, but unfortunately also entails the risk of complicating protocols and compromising data quality. For example, when reaction mixtures are applied to a solid support, unintended binding of fluorescence dye to the solid surface can occur, necessitating extensive washing to minimize spurious signals.
With respect to cost, prices for genotyping technologies currently available on the market vary considerably, from $0.50-2.00/genotype. For example, the template-directed dye-terminator incorporation assay with fluorescence detection (FP-TDI) (Chen 1999) costs roughly $0.50/genotype for reagents by list price. For other methods, due to their requirement for special reagents and/or clean-up procedures, the cost is higher, e.g. MALDI-TOF mass spectrometry is about $0.75-1.00, whereas pyrosequencing approaches $2.00/genotype. No currently available technology approaches the low cost which is necessary in order to prevent large-scale projects from becoming prohibitively expensive, i.e. <$0.10/genotype.
There are currently many genotyping applications in use or under development that require a relatively large number of both SNPs and samples (e.g., both in the thousands or more), demanding both cost effective and high throughput technologies. Examples include gene mapping studies by linkage or linkage disequilibrium (Kruglyak 1999; Long 1999) for complex traits and pharmacogenetics (Riley 2000). Clearly, these applications are critical to improving our understanding of the genetics of complex traits, common diseases and drug response, and to help attain the goal of individualized medicine. However, none of the current approaches are suitable for such applications in terms of cost effectiveness coupled with high throughput potential, and SNP genotyping demands both.

Multiple sequencible and ligatible structures for genomic analysis


A novel transfer apparatus having several movable parts is used for moving the dough product from a first position to a final position. The transfer apparatus uses the arm to move the dough product and a motor and software that controls the movement of the arm. A roller residing in the arm also has its own motor and software to control its rotational movement. The components of the arm such as a roller, back support and the flap each have their own unique shape and structure to maximize efficiency. The transfer apparatus may be used as an insertable apparatus in any food processing machine and also used as an integral part of the flat bread making machine.

For food preparation appliances that make dough products, a common problem would be that the dough products tend to be sticky and stick to a surface. Therefore it can be difficult to transport these dough products, for example from the kneading station to the cooking station. There is a need for a transfer method and structure that can enable a quick transfer.

Transfer apparatus and the method of using the same in a food preparation appliance


A method of manufacturing a semiconductor device that may include steps of forming a pad oxide layer and an insulating layer on a semiconductor substrate; and then performing a first etching process on the semiconductor device to form an insulating layer pattern exposing a portion of the pad oxide layer in a trench area; and then performing a second etching process with respect to the pad oxide layer by using the insulating layer pattern as a mask; and then performing a blanket ion implantation process with respect to the insulating layer pattern and the exposed portion of the pad oxide layer to form an ion layer in the semiconductor substrate; and then performing a third etching process with respect to the semiconductor substrate to simultaneously form a pad oxide layer pattern and a trench in the semiconductor substrate; and then forming an insulating layer on the semiconductor substrate including the trench; and then performing a planarization process with respect to the semiconductor substrate including the insulating material and removing the pad oxide layer pattern and the insulating layer pattern, thereby forming an isolation layer in the trench.

As semiconductor devices have become highly integrated, the size of a memory cell has been scaled down. Therefore, it is necessary to minimize the size of an isolation area. However, since the size of the isolation area is restricted due to a process of forming the isolation area and the arrangement of structures in a memory array, there are limitations in the reduction of the size of the isolation area. Accordingly, the isolation layer has been formed through a shallow trench isolation (STI) process providing a superior isolation characteristic with a narrow width instead of a local oxidation of silicon (LOCOS) process having a problem such as birds beak. In the STI process, a chemical mechanical polishing (CMP) may be performed after forming a trench in a semiconductor substrate and filling the trench with an oxide layer. However, when the isolation layer is formed through the STI process, an electric field may be concentrated on the edge of the isolation layer, so that an undesirable transistor is formed to exert an influence on the characteristic of a device.

Method of manufacturing semiconductor device


A sheet aligning device includes first and second aligning plates disposed on opposite lateral sides of the feeder board, the first and second aligning plates being capable of being reciprocatingly moved in a direction orthogonal to a sheet conveying direction and each having a sheet abutting surface parallel to the sheet conveying direction, an input member for inputting a sheet width, and a controller for controlling the first and second aligning plates so that the first aligning plate is moved, based on the inputted sheet width, to allow the sheet abutting surface thereof to be brought into abutment with a first lateral side of each sheet, thereby laterally aligning the sheet, and the second aligning plate is moved, based on the inputted sheet width, to allow a second lateral side of each sheet close to the second aligning plate to pass through a sheet-lateral-side passing zone on the second aligning plate. The sheet-lateral-side passing zone is located closer to the axis or centerline of the sheet than the sheet abutting surface is and has a flat surface throughout the sheet conveying direction.

1. Field of the Invention
The present invention relates to a sheet aligning device disposed downstream of a feeder board for laterally aligning each of sheets of paper during the sheet is conveyed by the feeder board from a sheet feeder to a printing unit and a method of controlling the same, and more specifically a sheet aligning device for laterally aligning each of sheets of paper, which has plural aligning plates capable of being reciprocatingly moved in a direction orthogonal to the sheet conveying direction and a method of controlling the same.
2. Related Art
A feeder board that conveys sheets of paper (hereinafter simply referred to sheets) from a sheet feeder to a printing unit is provided with a sheet aligning device (also called as a pulling device) for lateral alignment of each sheet. This aligning device has an aligning plate (also called as a pulling plate) with a sheet abutting surface parallel to the sheet conveying direction, which is reciprocatingly movable in a direction orthogonal to the sheet conveying direction, so that the aligning plate is preset at a given position to allow each sheet conveyed to have its lateral side abutting against the sheet abutting surface, thereby limiting the lateral displacement or offset of each sheet and hence laterally aligning each sheet.
As described in Japanese Patent Application Laid-open No. 2000-280453, it is known that an additional aligning plate is disposed opposite to the aforesaid aligning plate on the opposite lateral sides of the feeder board so that the lateral displacement or offset of each sheet is limited by at least one of the oppositely disposed aligning plates, according to the size of the sheets or the printing mode.
According to the above arrangement having the aligning plates disposed opposite to each other on the opposite lateral sides of the feeder board, one of the aligning plates is used for alignment, while the residual one is retracted as far as possible towards a corresponding lateral side of the feeder board.
According to needs and circumstances, each aligning plate is sometimes provided with a sheet pulling device made up of such as a pressing roller for pulling each sheet towards the sheet abutting surface, or is incorporated with a guide mechanism in the form of, for example, a bellows mechanism whose end is mounted to a laterally inward side of the aligning plate, which side is located close to the axis or centerline of the sheet to be conveyed so as to prevent intrusion of foreign matters such as a sheet into a moving path of the aligning plate. Meanwhile, a limited space of a printing press or the feeder board may poses a possibility that a lateral side of a sheet, if the sheet has an excessive size or the like, passes on the aligning plate out of use for alignment, even when the aligning plate is retracted to a farthermost position close to the corresponding lateral side of the feeder board. When the sheet side passes over the sheet pulling member of the aligning plate or the mounting portion of the guide mechanism, the sheet may be blocked or interrupted at these positions, causing the sheet is obliquely displaced from the right place. This may lead to a problem of poor alignment of the sheet in the lateral direction and hence errors in registration for printing.
It is an object of the present invention to provide a sheet aligning device that includes aligning plates disposed on the opposite lateral sides of a feeder board so as to allow any one of them to be operated for alignment of sheets and that is capable of preventing errors in registration for printing, and a method of controlling the same.

Sheet aligning device of a printing press and method of controlling the same