An oxide magnetic material comprising main constituents including Fe2O3, ZnO, CuO and NiO. Y2O3 of 0.003 to 0.021 wt % and ZrO2 of 0.06 to 0.37 wt % are included in said main constituents with respect to all amounts. It is also preferable that Si of 0.010 to 0.0112 wt % is included in said main constituents with respect to all amounts. Further, it is also preferable that Y2O3 of 0.001 to 0.011 wt %, ZrO2 of 0.031 to 0.194 wt %, and Si of 0.010 to 0.056 wt % are included in said main constituents with respect to all amounts.

1. Field of the Invention
The present invention relates to an oxide magnetic material to be used in various electronic parts, and a chip part formed with the oxide magnetic material and including a bulk-type coil part and an internal conductor for inductance to be used in a high frequency area, as well as a method of producing the oxide magnetic material, and to a method of producing the chip part.
2. Description of the Related Art
Nixe2x80x94Cuxe2x80x94Zn based ferrite is generally used as an oxide magnetic material such as coil parts and the like to be used in a high frequency area. A powder metallurgical method is general for producing the same. According to this method, oxides such as Fe2O3, NiO, CuO, ZnO and the like to be starting materials are weighed so as to be predetermined ratios, and are then dry- or wet-mixed and crushed, and this mixed powder is temporarily baked. Subsequently the temporarily baked matter is roughly crushed and is further pulverized. In case the oxide is wet-crushed, the powder is required to be dried. Here, properties of ferrite considerably depend on the composition; therefore, the divergence of composition should be kept extremely small from the viewpoint of production control. Further, material for laminated coil is required to be baked at a lower temperature than the melting point of Ag, and the composition control is required to be at a level of 0.1 mol % of Fe2O3, NiO, CuO or ZnO. Especially as to Fe2O3, reactivity increases as coming near to the stoichiometrical composition of ferrite, but when exceeding it, the reactivity abruptly decreases; therefore, among the main constituents of ferrite, a most serious composition control is needed.
For conventional Nixe2x80x94Cuxe2x80x94Zn ferrite, stainless steel balls, alumina balls, zirconia balls and other have been used as medium beads in the production process, and crushed with mixing, temporarily baked, roughly crushed and further pulverized. The bulk-type coil material is normally temporarily baked and crashed such that a specific surface area is around 1.0 to 6.0 m2/g. The laminated coil material is, however, crushed for a long time because it is required to be baked at a lower temperature than the melting point of Ag, thereby to increase the specific surface area up to around 3.0 to 15.0 m2/g to heighten the reactivity of powder at low temperature.
Here, the stainless steel balls have Fe as a main constituent, and due to mechanochemical reaction during crushing, Fe2O3 which is a main constituent of Nixe2x80x94Cuxe2x80x94Zn ferrite is increased. The increase of Fe2O3 changes the composition of Nixe2x80x94Cuxe2x80x94Zn ferrite and causes a stabilized composition control to be difficult. That is, it is difficult to control the composition with weighed quality values. Other medium beads have a defect in abrasion resistibility, and a defect that abraded powders of the medium beads are mixed into the crushed powder as impurities.
Further, the general medium beads have the inner side of abrasion resistibility which is lower than that of the outer side. Therefore, it causes a divergence in the composition due to the difference in mixing amount of powder produced by abrasion as the production goes on, and it is impossible to obtain stable composition. The crushing for a long time will invite the increase of the amount of the abraded powder, deteriorating the property of baked material. Namely, the abraded powder mixed as impurities will deteriorate the sintering property of Nixe2x80x94Cuxe2x80x94Zn ferrite, thereby to cause the baking temperature to be high for obtaining the density and permeability of sintered material with the neighborhood of a theoretical density. This will invite a high production cost and decrease of stability in products, and further will make it difficult to bake the sintered material at lower temperature than the melting point of Ag.
The Japanese patent No. 2708160 discloses, for the purpose of reducing the mix of abraded powder at the time of crushing, the use of balls of fully stabilized zirconia (FSZ) of high abrasion resistibility or of partially stabilized zirconia (PSZ) as medium beads for crushing Mnxe2x80x94Zn based ferrite. According to the method of this patent document, the zirconia balls of a diameter 0.5 to 3.0 mm are used as medium beads in the pulverizing process to extremely prevent impurities from being mixed, thereby to suppress the mixing amount to be less than 0.02 wt % relative to the main constituent. It is described in this patent document that with this method, the powder may be sintered at temperature lower by about 100 to 200xc2x0 C. (that is, at approximately 1000xc2x0 C.) in contrast to the temporarily baking temperature of 1200xc2x0 C. or higher of the conventional art to obtain the sintered material with the neighborhood of theoretical density, thus to industrially lower the sintering temperature and reduce the production cost. Further, JP-A-7-133150 discloses a sample having ZrO of 0.01 to 3.0 wt % relative to the main constituent of Nixe2x80x94Cuxe2x80x94Zn ferrite and baked at the temperature of 1100xc2x0 C. for 1.5 hours for the purpose of providing a magnetic material of high mechanical strength.
However, the baking temperature of approximately 1000xc2x0 C. described in the Japanese patent No. 2708160 will not actually reduce the baking cost and will not be adapted to the simultaneous baking with Ag of melting point of approximately 960xc2x0 C. The baking temperature of approximately 1100xc2x0 C. as described in JP-A-7-133150 will be further impossible for the simultaneous baking with Ag.
Further, according to the production method of the Japanese patent 2708160, medium beads of small diameter are used to reduce the amount of impurities mixed into the material due to the abrasion of the medium beads, and the temporarily baked material is crushed, taking a long time, for example, 196 hours. Therefore, the ball efficiency ([material processing amount]/[ball weight]), that is, the crashing efficiency is bad.
In consideration of the above mentioned problems, it is an object of the invention to provide an oxide magnetic material which can be subjected to a low temperature baking with holding sintering property and permeability and shortening the crushing time, and to provide a chip part formed by use of the same. In addition, it is also an object of the invention to provide a method of producing the oxide magnetic material and a method of producing the chip part.
According to a first aspect of the invention, the oxide magnetic material is characterized by containing Fe2O3, ZnO, CuO and NiO as main constituents, and further containing Y2O3 of 0.003 to 0.021 wt % and ZrO2 of 0.06 to 0.37 wt % in the main constituents with respect to all amounts.
As additives to the main constituents, it is also preferable that the oxide magnetic material further contains Si of 0.010 to 0.112 wt % (including the cases where Si is contained as silicon oxide) in the main constituents with respect to all amounts.
Further, as additives to the main constituents, it is also preferable that the oxide magnetic material further contains Y2O3 of 0.001 to 0.011 wt %, ZrO2 of 0.03 to 0.194 wt %, and Si of 0.010 to 0.056 wt % (including the cases where Si is contained as silicon oxide) in the main constituents with respect to all amounts.
So far as giving no influence to the properties such as the permeability or the density of the baked material, Si, P, Al, B, Mn, Mg, Co, Ba, Sr, Bi, Pb, W, V, Mo and the like may be included as impurities. For obtaining a permeability higher than a predetermined value, the composition of main constituents is preferably Fe2O3 of 40 to 51 mol %, ZnO of 1 to 34 mol %, CuO of 1 to 30 mol % and the balance being NiO. More preferably, Fe2O3 is 46 to 50 mol %, ZnO is 32 to 34 mol %, CuO is 9 to 11 mol % and NiO is 8 to 11 mol %.
In case the partially stabilized zirconia ball (PSZ) containing Y2O3 is used to crush the temporarily baked powder, it is known that the partly stabilized zirconia ball having Y2O3 containing about 3 mol % is most excellent in hardness and destructive toughness value (Strong Zirconia-Tough Ceramics, written by HORI, Saburou, issued from Uchida Roukakuen). For trying to obtain the crushed powder of average particle diameter of approximately 0.1 to 1.0 xcexcm, if the composition is Y2O3 of less than 0.003 wt % and ZrO2 of less than 0.06 wt %, it is required to crush the powder, delaying an agitating rate and taking a long time. However, if the composition is more than these weight percents, the crushing efficiency may be heightened and the crushing is possible at a shorter time, though depending on the size of ball diameter and agitating rate. On the other hand, if Y2O3 exceeds 0.021 wt % and ZrO2 exceeds 0.37 wt %, it is difficult to obtain an apparent density of 5.0 g/cm3 or more which is said to be not problematical about the physical strength at 920xc2x0 C. where a simultaneous baking with Ag is possible. Therefore, the baking temperature should be raised in order to secure the apparent density. Further, if Y2O3 exceeds 0.021 wt % and ZrO2 exceeds 0.37 wt %, the permeability may be deteriorated.
In the case where the oxide magnetic material further contains Si as additives to the main constituents, for trying to obtain the crushed powder of average particle diameter of approximately 0.1 to 1.0 xcexcm, if the composition is Si of less than 0.010 wt %, it is required to crush the powder, delaying an agitating rate and taking a long time. However, if the composition is more than these weight percents, the crushing efficiency may be heightened and the crushing is possible at a shorter time, though depending on the size of ball diameter and agitating rate. On the other hand, if Si exceeds 0.112 wt %, it is difficult to obtain an apparent density of 5.0 g/cm3 or more which is said to be not problematical about the physical strength at 920xc2x0 C. where a simultaneous baking with Ag is possible. Therefore, the baking temperature should be raised in order to secure the apparent density. Further, if Si exceeds 0.112 wt %, the permeability may be deteriorated.
In the case where the oxide magnetic material further contains Y2O3, ZrO2, and Si as additives to the main constituents, for trying to obtain the crushed powder of average particle diameter of approximately 0.1 to 1.0 xcexcm, if the composition is Y2O3 of less than 0.001 wt % and ZrO2 of less than 0.031 wt %, and Si of less than 0.010 wt %, it is required to crush the powder, delaying an agitating rate and taking a long time. However, if the composition is more than these weight percents, the crushing efficiency may be heightened and the crushing is possible at a shorter time, though depending on the size of ball diameter and agitating rate. On the other hand, if Y2O3 exceeds 0.011 wt % and ZrO2 exceeds 0.37 wt % and Si exceeds 0.056 wt %, respectively, it is difficult to obtain an apparent density of 5.0 g/cm3 or more which is said to be not problematical about the physical strength at 920xc2x0 C. where a simultaneous baking with Ag is possible. Therefore, the baking temperature should be raised in order to secure the apparent density. Further, if Y2O3 exceeds 0.011 wt % and ZrO2 exceeds 0.194 wt % and Si exceeds 0.056 wt %, the permeability may be deteriorated.
A chip part according to a second aspect of the invention is characterized by using a sintered material of the oxide magnetic material which is described in the first aspect of the invention so as to be formed as a bulk-type coil part.
As the chip part according to the second aspect is composed by using the oxide magnetic material which is defined in the first aspect of the invention, the chip part is baked at a low temperature and is provided at a low cost while sufficiently coping with the one baked at a high baking temperature with respect to the strength and permeability.
A chip part according to a third aspect of the invention is characterized by using the sintered material of the oxide magnetic material according to the first aspect, and having an electric conductor layer in the sintered material, the chip part having a laminated coil part or partly having the laminated coil part.
The chip part according to a fourth aspect of the invention is characterized in that an internal conductor has Ag or an alloy of Ag and Pd as a main constituent in the tip part according to the third aspect.
As the chip part according to the third and fourth aspect of the invention is formed by use of the oxide magnetic material according to the first aspect, the chip part has substantially the same strength and permeability as the chip part according to the second aspect, and further can be baked simultaneously with Ag and the alloy of Agxe2x80x94Pd.
A fifth aspect of the invention is that a method for producing the oxide magnetic material according to the first aspect, characterized in that medium beads of partially stabilized zirconia are used at a time of mixing and crushing raw material and at a time of crushing a temporarily baked material, and Y2O3 of 0.003 to 0.021 wt % and ZrO2 of 0.06 to 0.37 wt % is contained therein with respect to all amounts in the oxide magnetic material by wear of the medium beads.
Thus, if the partially stabilized zirconia balls is used to crush the material after being temporarily baked, it is possible to eliminate the difficult problem in the composition control as using the conventional stainless steel balls or the like. Further, since Y2O3 and ZrO2 are mixed into the material through the crushing process, the process for weighing and mixing the constituent into the material may be eliminated.
In the fifth aspect of the invention, it is also preferable that silicon nitride is used as medium beads and that Si of 0.010 to 0.112 wt % is contained with respect to all amounts in the oxide magnetic material by wear of the medium beads.
Thus, if the silicon nitride balls are used to crush the material after being temporarily baked, it is possible to eliminate the difficult problem in the composition control as using the conventional stainless steel balls or the like. Further, since Si is mixed into the material through the crushing process, the process for weighing and mixing the constituent into the material may be eliminated.
Further, in the fifth aspect of the invention, it is also preferable that partially stabilized zirconia and silicon nitride are used as medium beads at a time of mixing and crushing raw material and at a time of crushing a temporarily baked material by means of the media agitating mill of the wet internal circulation type. By wear of the medium beads, Y2O3 of 0.001 to 0.011 wt %, ZrO2 of 0.03 to 0.194 wt %, and Si of 0.010 to 0.056 wt % are contained with respect to all amounts in the oxide magnetic material.
Thus, if balls of partially stabilized zirconia and silicon nitride are used to crush the material after being temporarily baked, it is possible to eliminate the difficult problem in the composition control as using the conventional stainless steel balls or the like. Further, since Y2O3, ZrO2, and Si are mixed into the material through the crushing process, the process for weighing and mixing the constituent into the material may be eliminated.
Moreover, in the fifth aspect of the present invention, it is preferable that the volume ratio of the silicon nitride beads is in the range between 20% and 99% with respect to the total amount of partially stabilized zirconia beads and silicon nitride beads.
Due to the above ratio of partially stabilized zirconia beads and silicon nitride beads, mixing of ZrO2 and Y2O3, which are main constituents of partially stabilized zirconia beads, is further facilitated by means of wear of the medium beads, compared with the case where only partially stabilized zirconia beads are used to crush the material.
According to a sixth aspect of the invention, a method for producing the oxide magnetic material in the fifth aspect is characterized by using material as medium beads having diameter of 0.2 to 5 mm.
In the case where the medium beads are of a diameter less than 0.2 mm, the crushing efficiency is lowered. On the other hand, in the case where the diameter exceeds 5 mm, the powder will not be sufficiently pulverized, and the sintering temperature will become high for obtaining a density of sintered material with the neighborhood of theoretical density and the permeability will be deteriorated.
According to a seventh aspect of the invention, a method for producing the oxide magnetic material in the fifth or sixth aspect is characterized in that agitating rate of the medium beads is 2.0 to 8.0 m/s.
In the case where the agitating rate of the medium beads is lower than 2.0 m/s, it will take a long time to crush the material until a desired specific surface area is obtained. This is not reasonable in consideration of the lead time pertaining to the production of material. On the other hand, if exceeding 8.0 m/s, the abrasion of beads is increased, and the baking temperature becomes high for obtaining the density of a sintered material with the neighborhood of the theoretical density and a desired permeability, inviting the increase of production cost, the lowering of stabilization of products, and further making it difficult to bake the material at a temperature lower than the melting point of Ag.
According to an eighth aspect of the invention, the method in one of fifth to seventh aspects is characterized by obtaining powders of specific surface area of 6.0 to 15.0 m2/g by crushing from the material after having been temporarily baked.
In the case where the specific surface area is less than 6.0 m2/g, the baking temperature becomes high for obtaining the density of the sintered material in the neighborhood of the theoretical density, inviting the deterioration of the permeability. In the case where it is more than 15.0 m2/g, the crushing time will be long.
According to a ninth aspect of the invention, the method in the third or fourth aspect is characterized by forming an oxide magnetic material crushed by medium beads and an internal conductor and by baking at a certain temperature range. If partially stabilized zirconia is used as medium beads, the temperature range is between 880 and 920xc2x0 C. If silicon nitride is used as medium beads, the temperature range is between 910 and 920xc2x0 C. If partially stabilized zirconia and silicon nitride are used as medium beads, the temperature range is between 910 and 920xc2x0 C.
In the case where the baking temperature is lower than the above range, the sintering is insufficient. In the case where exceeding the above range, the electrode material is diffused in ferrite to extremely deteriorate the magnetic property of chip. In this method, the baking time is about 5 minutes to 3 hours.
The oxide magnetic material for a bulk-type coil part or a laminated coil part or other electronic parts according to the invention is a ferrite material containing the main constituents of Fe2O3, ZnO, NiO, and CuO, and containing, if needed, the slight amounts of weighed additives such as Si, P, Al, B, Mn, Mg, Co, Ba, Sr, Bi, Pb, W, V, Mo and the like, and further containing, as sub-constituents, ZrO2 and Y2O3 which are mixed into the material due to abrasion of partially stabilized zirconia balls as the medium beads. It is also preferable that the ferrite material further contains, as sub-constituents, Si which is mixed into the material due to abrasion of silicon nitride balls as the medium beads. Furthermore, it is also preferable that the ferrite material further contains, as sub-constituents, ZrO2, Y2O3, and Si which are mixed into the material due to abrasion of partially stabilized zirconia balls and silicon nitride balls as the medium beads. With adjustment of the particle size of the medium beads, agitating rate, agitating time at time of crushing raw materials and at time of crushing the material after being temporarily baked, the mixing amount of the medium beads is adjusted, and the baking temperature is not required to be heightened. Therefore, the baking may be available at temperature lower than the melting point of Ag.
The materials weighed as mentioned above are mixed and crushed by means of the media agitating mill of the wet internal circulation type with at least one of the partially stabilized zirconia balls and silicon nitride balls as the medium beads. Subsequently, the crushed material is temporarily baked and crushed by means of the media agitating mill of the wet internal circulation type with the partially stabilized zirconia balls as the medium beads, thereby to obtain the oxide magnetic material.
A core for the bulk-type coil is made up by adding a binder to the oxide magnetic material produced as mentioned above and is granulated, followed by molding into a predetermined shape, processed and baked at 900 to 1300xc2x0 C. in the air. The core may be processed after baking. The core is made by winding a wire therearound, the wire being of Au, Ag, Cu, Fe, Pt, Sn, Ni, Pb, Al, Co or an alloy thereof.
On the other hand, the laminated coil is normally produced by laminating into one body a paste of the magnetic layer of the oxide magnetic material and an internal conductor layer by means of a thick filming technique (printing process or the doctor blade method), then baking, subsequently printing the thus obtained sintered material on the surface thereof with a paste of an external electrode and baking. The internal conductor paste contains normally an electrically conductive element, a binder and a solvent. The material for the electrically conductive element is preferred to be an alloy of Agxe2x80x94Pd for a reason of increasing the quality coefficiency Q of inductor. The baking condition and baking atmosphere may be appropriately determined in consideration of the property and other of the magnetic material and electrically conductive element, and the baking temperature is preferred to be approximately 800 to 950xc2x0 C. More preferably, the baking temperature is about 880 to 920xc2x0 C. in the case where the partially stabilized zirconia balls are used as medium beads and about 910 to 920xc2x0 C. in the case where silicon nitride balls or both the partially stabilized zirconia balls and silicon nitride balls are used.


A method and system for converting the output of a communications port (e.g., a serial port or a USB port) into video signals representing the output of a terminal using a KVM switch. Upon receiving characters from the communications port, the system interprets the characters as terminal emulation commands and internally generates a representation of what a resulting terminal screen would look like. From that internal (digital) representation, the system produces analog outputS representing the terminal screen. The analog outputs are output on the monitor attached to the KVM switch.

1. Field of the Invention
The present invention is directed to a terminal emulator for use with a keyboard, video and mouse (KVM) switch. More specifically, the present invention provides a converter interposed between a communications interface (e.g., a serial or USB port) of a computer and the three part KVM interface of a KVM switch for converting the (serial) communications into video signals representing a terminal.
2. Description of the Background
Apex Inc., the assignee of the present invention, produces and sells a series of switches that enable a single keyboard, mouse and monitor to logically connect to any one of several computers simultaneously. One embodiment of a KVM switch 74 is shown in the block diagram of FIG. 1. Using commands from a keyboard 122, the user may switch between the several computers (100a through 100c). Internally, based on the selection, the switch 74 establishes a set of three connections from the computer-interface side to the user-interface side. Accordingly, the output of the video card of one of the computers is displayed on the video monitor 120 when that computer is selected, and the signals from the keyboard 122 and the mouse 124 are directed to the selected computer as if the keyboard 122 and mouse 124 were directly connected to the selected computer.
Terminal emulators are also known. One use of terminal emulators is to debug the operation of a computer's operating system. Since controlling the monitor is complex for low-level operating system code, it is often impractical to write error messages to a screen to track operations of the operating system. As a result, some operating systems provide support for sending status messages to the serial port of the computer. Such a technique is far less complicated than writing to the screen.
To view the status messages, a terminal (or a computer running a terminal emulator) is connected to the serial port, and the output from the serial port is interpreted as a stream of terminal commands. Those terminal commands enable text to be written to the terminal's screen. Those commands also provide additional control functions such as clearing the screen and changing the attributes (e.g., underlining, inverted color, blinking, and foreground and background color) of a displayed character.

Packet-based switch for controlling target computers


There is provided a storage system accessed by a host computer, comprising: an interface coupled to the host computer; a processor coupled the interface; a memory coupled to the processor; and a storage device for storing the data. The storage device comprises a first storage device in which the stored data is accessed sequentially from a beginning, and a second storage device in which the stored data can be accessed at random. The data stored in the first storage device is replicated to the second storage device, and the replicated data is accessed by the host computer. The processor receives a candidate of the data including a priority of the data from the host computer, and replicates the data included in the candidate of the data, and stored in the first storage device to the second storage device in accordance with the priority before reception of an access request.

This invention relates to a technology for a tape archive of data.
Government organizations, business enterprises, educational institutes, and the like, in order to handle various types of large amounts of data, employ a relatively large-scale storage system in order to manage the data. The storage system of this type includes at least one storage control device. The storage control device, for example, includes a large number of storage devices, and can provide a storage area in a form of the redundant array of inexpensive disks (RAID). On the physical storage area provided by the group of the storage devices, at least one logical device (also referred to as logical volume) is formed. A host computer (hereinafter referred to as host) issues a write command and a read command to the logical device, thereby writing and reading data to and from the logical device.
A virtual disk library system, which is a type of the storage control device, includes hard disk devices and magnetic tape devices stored in an enclosure, and can copy data, if necessary, between the hard disk and the magnetic tape media, refer to JP 2006-163454 A.

Storage system for staging data in random access area


An X-ray generation unit and an X-ray detection unit are controlled by an imaging control unit when two-dimensional images of a sample without a contrast and two-dimensional images of a sample with a contrast are imaged, so as to set imaging angles of these two-dimensional images to be different from each other, and a three-dimensional image of the sample is acquired by an image calculation unit on the basis a plurality of two-dimensional images without a contrast and a plurality of two-dimensional images with a contrast which are acquired under the control of the X-ray generation unit and the X-ray detection unit.

1. Field of the Invention
The present invention relates to an X-ray imaging device and an X-ray imaging method, by which a plurality of two-dimensional images is acquired by performing imaging during the rotation of an X-ray generation unit and an X-ray detection unit around a sample as a rotation center, and a three-dimensional soft tissue image or the like of the sample is acquired by performing a reconstruction of the two-dimensional images.
2. Description of the Related Art
The X-ray imaging device equips a C arm. The C arm is provided with an X-ray generation unit and an X-ray detection unit facing one another. There has been proposed a technique of acquiring a three-dimensional soft tissue image of a sample with the use of the X-ray imaging device. The soft tissue image of the sample acquired according to such technique shows soft tissues of internal organs, etc., inside the sample such as tissues having low X-ray absorption. It has been understood as that the soft tissue image is capable of showing, for example, a difference of a substance X-ray absorption coefficient by 10 H.U. in approximate with a CT value expressed in a relative value from a reference substance.
The X-ray imaging device rotates the X-ray generation unit and the X-ray detection unit around a sample as a rotation center by rotating the C arm. The X-ray imaging device images at every rotary move by predetermined angle while rotating the X-ray generation unit and the X-ray detection unit. The X-ray imaging device acquires a plurality of two-dimensional images by performing the imaging at every rotary movement, and reconstructs a three-dimensional soft tissue image of the sample from the two-dimensional images. For the reconstruction, a three-dimensional soft tissue image is reconstructed by applying the reconstruction theory such as Feldkamp method, or the like. In order to reconstruct the three-dimensional soft tissue image, it is necessary to acquire about 400 frames of two-dimensional images by imaging from about 400 directions of an imaging angle direction.
While surgical operation, the three-dimensional soft tissue image of the sample acquired by the X-ray imaging device is shown on a display. When there is confirmed, for example, a bleeding from vessel, a treatment to stop the bleeding is carried out. In this case, there is a demand to identify a bleeding blood vessel in the sample and observe the blood vessel image and the soft tissue image by overlaying them for a display.
In order to acquire the blood vessel image, it is necessary to inject a contrast agent into a blood vessel and obtain the flow of the contrast agent by an X-ray imaging. For the blood vessel image, as shown in FIG. 17 for example, the rotation of X-ray generation unit and X-ray detection unit is initiated under a condition of without a contrast where the contrast agent is not injected. At this time, the X-ray generation unit and the x-ray detection unit start rotate from a rotation start angle position s to a rotation end angle position e around a sample 1 as a rotation center within the imaging range of θ. The imaging is performed at imaging angle positions k1, k2, . . . , kn, respectively, whereat the X-ray generation unit and the X-ray detection unit step each by a predetermined angle. Accordingly, there can be obtained, for example, 400 directions of a two-dimensional image 2 without a contrast. The rotation angle of the imaging range θ is obtained by adding 180° with a Fan angle F. Thus obtained 400 frames of a two-dimensional image 2 without a contrast are recombined to acquire a three-dimensional soft tissue image 3 showing soft tissues.
Alternatively, in the presence of a contrast where the contrasting agent is injected, the X-ray generation unit and the x-ray detection unit are rotated around the sample 1 as a rotation center within the imaging range of θ. Then, the imaging is performed at imaging angle positions k1, k2, . . . , kn, respectively, whereat the units step each by predetermined angle as above, thereby obtaining, for example, 400 frames of a two-dimensional image with a contrast.
Next, images 4 which are the subtraction between 400 frames of the two-dimensional image 2 without a contrast and 400 frames of the two-dimensional image 3 with a contrast are obtained. The subtraction images 4 are recombined to acquire a three-dimensional blood vessel image 5 showing blood vessels.
However, since it is necessary to acquire total 800 frames of images, which are 400 frames of a two-dimensional image 2 without a contrast and 400 frames of a two-dimensional image with a contrast, such to acquire the blood vessel image 5, there may be a possibility of increase dose against the sample 1.
An example of the X-ray imaging device is disclosed in JP-A-2005-80285.

X-ray imaging device and X-ray imaging method


The optical semiconductor component has a semiconductor body having a first surface with an active region and a second surface with a passive region. An optically transparent layer adjoins at least the optically active region. Conduction paths extend from the active region through the semiconductor body to contact-making points in the region of the second surface.

The present invention relates to an optical semiconductor component having an optically transparent protective layer. The semiconductor component has a semiconductor body, which has an active region in the region of a first surface and a passive region in the region of a second surface. Such optical semiconductor components are known, in principle, from the prior art. See, for example, A. Badihi, xe2x80x9cA CSP Optoelectronic Package For Imaging And Light Detection Applicationsxe2x80x9d, June 1996, http://www.shellcase.co.il/tech-frame.html. The optical components are used, for example, in optical sensors, LEDs, laser diodes, photodiodes, or memory devices that can be influenced optically.
In order to be able to prevent such semiconductor components from being destroyed, it is necessary to ensure that the component is protected against harmful external influences. A customary measure for this purpose is to package the semiconductor component in a housing, the housing having an optically transparent region which guarantees transmissivity for optical radiation. As a rule, there is a cavity situated between this transparent region and the semiconductor body, that is to say this housing region is arranged at a certain distance from the optically active region of the semiconductor component. However, such housings considerably enlarge the dimensions of these optical semiconductor components and thus impede more extensive miniaturization of the semiconductor components. Such miniaturization is important, for example, in the context of mobile telecommunications equipment, cameras or similar areas of application which require the smallest possible structural elements. On the other hand, the customary methods used for making contact with optical semiconductor components also constitute an impediment to more extensive miniaturization of these components.
The object of the invention is to provide an optical semiconductor element with optically transparent protective layer which overcomes the above-noted deficiencies and disadvantages of the prior art devices and methods of this kind, and which allows the most extensive miniaturization possible.
With the above and other objects in view there is provided, in accordance with the invention, an optical semiconductor component, comprising: a semiconductor body having a first surface with an optically active region and a second surface with a passive region; an optically transparent layer adjoining the optically active region; and conduction paths extending from the active region through the semiconductor body to contact-making points at the second surface.
In other words, the novel optical semiconductor component has an optically transparent layer arranged in such a way that it directly adjoins at least the optically active region of the component. Consequently, the smallest possible distance between the transparent layer, which is designed as a protective layer for the semiconductor component, and the active region of the semiconductor component is guaranteed. The smallest possible structural height of the semiconductor component is thus obtained. The transparent layer may thereby cover only the active region of the semiconductor body, but it ideally covers the entire first surface of the semiconductor body, the active region of the component being arranged in the region of the first surface. Consequently, the entire first surface can be protected against harmful effects.
In accordance with an added feature of the invention, the transparent layer is a glass plate attached to the first surface with a transparent adhesive.
In accordance with an additional feature of the invention, the transparent layer is a plastic coating layer deposited onto the first surface or a plastic layer bonded to the first surface.
In other words, the transparent layer may be composed for example of a glass plate, e.g. of quartz glass, where the glass plate can be fixed on the first surface by means of a transparent adhesive. However, it is also possible to provide a transparent layer made of plastic, which is likewise fixed on the first surface by a transparent adhesive, or the transparent plastic layer is deposited directly onto the first surface, for example by spray application and curing, so that an adhering bond between the transparent layer and the first surface is automatically produced. A transparent adhesive can be dispensed with in this latter case.
In accordance with another feature of the invention, the semiconductor body is formed with openings each lined with a metal body, and the conduction paths extend through the openings. The metal body may be formed from a metal layer of aluminum or copper. In the alternative, the metal body is a tungsten plug.
According to the invention, in the case of the optical semiconductor component it is furthermore provided that conduction paths extend from the active region through the semiconductor body to contact-making points in the region of the second surface of the semiconductor component. Any contact arrangements projecting laterally beyond the dimensions of the semiconductor body can thus be dispensed with. The extent of the semiconductor body together with its contact arrangement is thus limited to the dimensions of the semiconductor body itself. Consequently, the width of the semiconductor component can also be reduced to the largest possible degree.
In this case, it may be provided that the conduction paths extend through openings in the semiconductor body from the first to the second surface, these openings each being lined with a metal body. By way of example, said metal body may be formed by a metal layer, e.g. made of aluminum or copper, where the metal layer either only covers the insides of the openings or fills the entire opening. However, it may also be provided that the metal body is formed by a metal plug, e.g. made of tungsten.
The openings in the semiconductor body can be produced by a laser, for example, preferably proceeding from the rear side of the semiconductor body. Such a method is known, in principle, from R. H. Livengood, V. R. Rao, xe2x80x9cFIB Techniques to Debug Flip-Chip Integrated Circuitsxe2x80x9d, March 1998, Semiconductor International, p. 111-16.
In accordance with a further feature of the invention, the conduction paths are formed of doped semiconductor regions in the semiconductor body extending from the first surface to the second surface. The doped semiconductor regions may be formed by implantation. In an alternative embodiment, the doped semiconductor regions may be trenches filled with doped semiconductor material, the trenches extending from the first surface to the second surface.
As noted, the doped semiconductor regions can be formed for example by the implantation of doping material into the semiconductor body. However, it may also be provided that trenches are patterned into the semiconductor body, which trenches are filled with a doped semiconductor material. In order to accelerate this method, it may be provided, for example, that first of all only doped semiconductor regions which extend from the first surface into the semiconductor body to a certain depth are produced. The semiconductor body is subsequently ground starting from the second surface until the doped regions are reached and thus come through to the surface. Consequently, it is no longer necessary to provide for continuous implantation or patterning of trenches through the entire semiconductor body.
In accordance with a concomitant feature of the invention, the conduction paths terminate in conductive elevations projecting above the second surface and forming contact-making points at the second surface. In other words, the conduction paths end in conductive elevations, so-called xe2x80x9cbumpsxe2x80x9d, in the region of the second surface. These elevations are elevated above the second surface and thus form protruding contact-making points. The optical semiconductor component can then be connected to an intermediate carrier or a circuit board via these contact-making points.
Other features which are considered as characteristic for the invention are set forth in the appended claims.
Although the invention is illustrated and described herein as embodied in an optical semiconductor component having an optically transparent protective layer, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawing.

Optical semiconductor component with an optically transparent protective layer


A spring bar coupling device is described for coupling a spring bar of a weight distributing trailer hitch to a trailer frame. The spring bar coupling device can include a spring bar support operable to interface with and support a spring bar of a weight distributing trailer hitch. The spring bar support can have a vertical support arm having a first coupler opening, and a lower spring bar stop extending from the vertical support arm to provide a lower interface for the spring bar. The spring bar coupling device can also include a channel bracket having at least two opposing walls defining a vertically oriented channel operable to receive the vertical support arm, and a second coupler opening in at least one of the two walls. The first and second coupler openings can be configured to be aligned with one another at a first coupling location when the vertical support arm is located at least partially within the vertically oriented channel. In addition, the spring bar coupling device can include at least one coupler operable to extend into the first and second coupler openings to couple the spring bar support to the channel bracket.

When towing a trailer behind a vehicle, one factor that can significantly affect safety is the distribution of the trailer's weight among the front and rear wheels of the tow vehicle. When a trailer is hitched to a tow vehicle, the tongue weight typically causes the rear of the tow vehicle to lower, and the front of the tow vehicle to raise. One purpose of a weight distributing hitch is to remove excessive weight from the tow vehicle's rear axle and to distribute it to the front wheels of the tow vehicle and to the trailer wheels. Typical weight distributing hitches require an iterative trial and error set-up process, which often involves repeated loading and unloading of the hitch to achieve the correct weight distribution adjustment.
Another factor that can significantly affect safety is the tongue weight or static downward force that the trailer applies to the hitch of the tow vehicle. If the tongue of the trailer does not apply enough downward force to the hitch, a dangerous condition called trailer sway could result. If the tongue of the trailer applies too much downward force to the hitch, then the rear tires of the tow vehicle can be overloaded, thus pushing the rear of the vehicle around and compromising steering and/or braking of the tow vehicle. A generally acceptable tongue weight for any trailer is somewhere between 9% and 15% of the gross trailer weight (GTW).

Spring bar coupling device for a weight distributing trailer hitch


The present disclosure relates to network security software cooperatively configured on plural nodes to monitor, alert, authenticate, and authorize devices, applications, users, and data protocol in network communications by exchanging nonpublic identification codes, application identifiers, and data type identifiers via pre-established communication pathways and comparing against pre-established values to provide authorized communication and prevent compromised nodes from spreading malware to other nodes.

Networked computing devices are embedded almost everywhere in the modern economy. Increasingly connected to the wider information environment, these devices deliver enhanced control, safety, and convenience. The downside to this paradigm, however, is increased surface area and vectors for cyber attacks, especially from inside traditional security perimeters such as firewalls, placing both data and infrastructure at risk. Recognizing that actors, systems or services operating from within the security perimeter can pose as much of a threat as external threats, proactive architectures such as Zero Trust architectures are intended to provide rigid cyberhygeine policies to authorize and authentic all traffic in a network.
In practice, such strategies have proven difficult to fully implement in modern computing environments while maintaining stable quality of service (QOS). Providing the complete system description necessary to implement a proactive security architecture such as Zero Trust, for example, can be daunting. Moreover, QOS can be difficult to maintain over time as the network and node configurations evolve due to an ever growing number of inter-related moving parts (including applications, operating systems and cybersecurity agents) that require nearly continual configuring, updating, and patching as well as resolving of conflicts that arise as a result of these activities. In lockstep with these changes, proactive security approaches can require near continual reconfiguring to avoid mismatches which can degrade QOS. As a result, organizations struggle to implement proactive security architectures.
Better engagement models are needed for initialization, implementation, and maintenance of pro-active network security architectures. First, new approaches at the pre-implementation stage are needed to identify users, applications, connections, and contexts to be incorporated in an initial security configuration. Second, real-time mapping and tracking of actual system behavior is required to provide dynamic updates to system configuration. Third, proactive architectures should be implemented with flexibility to monitor and adjust detection activity before progressing to full cyber hygiene protection.

Methods for zero trust security with high quality of service


A rechargeable battery assembly comprises a built in connector, circuitry to provide charge control, at least one rechargeable battery unit, and circuitry providing a further function. The battery assembly is mechanically reversible between a deployed configuration having a general form and functions of a conventional battery format and a charge configuration in which the connector is made accessible. In the deployed configuration the battery assembly is capable of providing a discharge to at least one voltage level and can be charged by means of a suitable external charger device. In the charge configuration the battery assembly can be charged by means of the integral charge control circuitry when the connector is connected to a suitable powered receptacle on a computing or peripheral device.

A significant problem with rechargeable batteries is their general dependency on an external recharging unit, plug and AC socket. This limits the overall "portability" of rechargeable batteries as there is a need to find and carry a charger and connect it to an AC mains supply (which is also less suitable for children due to safety concerns related to high voltages). A further problem is the proliferation of chargers for different battery chemistries creating potential confusion as well as safety concerns, as charging cells in the wrong charger or in an old charger can create problems. Consumers are also inconvenienced by carrying dedicated chargers and cables for each of their appliances. The present arrangements encourage a proliferation of chargers, as well as a disposable battery culture where in excess of 15 billion batteries are thrown away annually, creating a significant environmental and waste problem.
There are now very many USB or other powered ports in existence across a range of computing devices in homes and offices, and on mobile devices, such as laptops, which can act as low voltage power supplies. The mechanisms for USB charging have been well documented and are part of the USB specification. There is an opportunity, as disclosed in our earlier patent applications GB0425967, U.S. Ser. No. 11/211,934, PCT/GB2005/004356, the entire contents of which are hereby incorporated by reference, to create a new battery category of USB Batteries or USB Cells, having in the deployed configuration the same size, format and function as standard format cells so as to fit common appliances and devices, but including circuitry and connectors that can be deployed in a charge mode to enable the device to be charged when connected to a USB port. This application discloses further mechanisms and circuitry to implement advance forms of rechargeable battery assemblies.

This patent is subject to a terminal disclaimer.

Rechargeable battery assembly with movable connector and power conversion circuitry


Methods and systems of distributing a radio frequency (RF) signal to a wireless device. The methods and systems include providing a RF transmitter having an antenna output, coupling a first end of an existing in-building wire network to the antenna output and transmitting a RF signal from the RF transmitter into the in-building wire network such that the in-building wire network operates as a waveguide. The methods and systems further include transmitting the RF signal from a second end of the in-building wire network to free air and receiving the RF signal with one or more wireless devices.

The wireless distribution of broadband signals within a building is becoming commonplace. Wi-Fi is now the most common way people access the Internet. Smart phones compliant with 3G and 4G standards are commonly used inside buildings. Personal computers, laptop computers, cellular telephones, tablet computers, PDAs and other portable devices are typically configured to receive a wireless broadband signal. In addition, televisions, DVD players, Blu-ray disc players, smart thermostats, printers, copiers and many other digitally enabled home or business appliances are configured for wireless network access. To meet the needs of these and similar devices, many buildings now include a wireless access point (WAP), base station or repeater connected to a wired data or communication network to send and receive data or communication signals from the wired network to wireless devices within or near the building.
A typical WAP, base station or repeater includes a radio frequency (RF) transmitter. The transmitter is placed at a selected location within or near a building to provide wireless communications to wireless devices located throughout the building. For instance, a wireless router may be located in one room of a multi-level, multi-room building having several network devices scattered throughout the building.
One problem with the transmission of wireless broadband signals within a building is difficulty obtaining a sufficiently strong communication channel between the WAP or repeater and various receiving devices. For example, the exceptionally popular Wi-Fi standard defined in IEEE 802.11b is a low powered solution (less than 1 W) having a range of no more than 300 feet from the transmitter. The closer a receiving device is to the transmitter the better chance the receiver will have of connecting and typically the faster the Wi-Fi uplink/downlink performance will be. Connectivity and signal strength problems can be exacerbated by the walls, floors, ceilings and other surfaces or barriers present in a typical building which can cause signal attenuation and reflection.
Thus, some wireless devices located within range of a WAP or other transmitter may be properly connected to the wireless network while other wireless devices located farther away from the transmitter, but still within the building premises, may fall outside the wireless coverage zone or within a zone of marginal coverage. The range of a wireless network within a building can be extended with multiple access points or dedicated extenders. These solutions however, involve additional cost and additional cabling between access points. Therefore, a simple and cost effective solution for extending wireless coverage is needed. The embodiments disclosed herein are intended to overcome one or more of the problems discussed above, and to provide related advantages.

Enhanced wireless signal distribution using in-building wiring


A solid state Quantum high Energy density Storage Or Retrieval device known as a quensor, and the trademark ENSOR(trademark), having an energy density of about 1-15 kwhr/kg, comparable to gasoline, or more, is described. A fundamentally new principle is employed: A quensor film comprises oriented molecules with donor and acceptor groups and with metal layers on its surfaces. A dipole electric field may be established in the gap between a donor and an acceptor. Electric energy is stored in or retrieved from dipole electric fields throughout the volume of the quensor film. Electric energy is stored in the quensor film by charging the dipole electric fields from an electric energy source. Electric energy is retrieved from a quensor film by discharging the dipole electric fields and supplying the energy to a load. Electric breakdown in the film is avoided because positive and negative electric charges in the film are balanced everywhere. Busbars attached to the metal layers are connected to terminals for charging or discharging the device. The manufacture of a quensor film is described. A composite photovoltaic and quensor panel for the storage or retrieval of solar-electric energy day or night on demand is also described.

This invention relates to a solid state Quantum high Energy density Storage Or Retrieval device known as a quensor, and the trademark ENSOR(trademark), having an energy density of about 1-15 kwhr/kg, comparable to gasoline, or more to a theoretical limit of about 75 kwhr/kg, is described. A fundamentally new principle is employed: A quensor film comprises oriented molecules with donor and acceptor groups, and with metal layers on the film surfaces. A dipole electric field may be established in the gap between a donor and an acceptor. Electric energy is stored in or retrieved from dipole electric fields throughout the volume of the quensor film. Electric energy is stored in the quensor film by charging the dipole electric fields from an electric energy source. Electric energy is retrieved from a quensor film by discharging the dipole electric fields and supplying the energy to a load. Electric breakdown in the film is avoided because positive and negative electric charges in the film are balanced everywhere. Busbars attached to the first and second metal layers are connected to terminals for charging or discharging the device.
In one embodiment the composite film comprises a plurality of stretch-oriented polymer chains with pendant donor and acceptor groups, and a gap between the donor and acceptor. In another embodiment the composite film comprises molecules with donor acceptor groups, and a gap between an adjacent donor and an acceptor, the molecules being electroordered and fixed in position.
This invention also relates to the manufacture of a quensor film.
This invention further relates to a composite photovoltaic and quensor panel for the storage or retrieval of solar-electric energy day or night on demand.
03.
Quensor: A quantum energy storage or retrieval device
q-line: In a quensor, a line having a repeated pattern comprising an acceptor covalently linked to a donor and a gap between a donor and an adjacent acceptor.
Cell Configuration of a Unit Volume of Energy Storage or Retrieval.
Composite Film: A quensor polymer film between first and second outer metal layers on the film surfaces.
Covalent Bond: Elements such as Carbon tend to acquire their electron octets by sharing orbital electrons.[1.1] Example:
Electron Affinity: The energy gained by an electron from the electric field when it is acquired by an an atom or molecule. An element on the far right of the periodic table may acquire an electron to produce the stable electronic orbital configuration of the next higher noble gas. [2.41]
F+exe2x88x92xe2x86x92Fxe2x88x92xe2x80x83xe2x80x83(2)
xe2x80x839 electrons 10 electrons; same as neon
Group: An assembly of one or more atoms, usually attached to another atom or molecule by one or more covalent bonds.
Donor: A group characterized by the loss of electron, producing a positive ion.
Acceptor: A group characterized by an affinity for, and a gain of an electron. The electron is trapped by the acceptor, which becomes a negative ion.
Electric Dipole Field: Before the loss of an electron from a donor the internal positive and negative charges of the donor are balanced and close together. When an electron is removed from a donor group across a gap to an acceptor group, the donor becomes a positive ion, the acceptor becomes a negative ion, and electric energy is supplied from an external source to create an dipole electric field in the gap.
Spacer: A group forming an insulating bridge across the tunnel distance between a donor group and an acceptor group.
Gap: The tunnel distance between a donor and an acceptor, which may be-free space, or a spacer. In an electric field an electron may tunnel from a donor to an acceptor across a gap; or, in no field, less frequently, may spontaneously tunnel back.
Critical Range: A tunnel distance of 7 xc3x85 to 30 xc3x85 between donor and acceptor.
Linker: A group linking a donor and an acceptor.
Pillar: A rigid insulating structural group used as a crosslinking spacer between polymer chains.
Induced Dipole: An electric dipole in a group of atoms temporarily produced by a displaced electric charge without ionization of the group of atoms. An induced dipole, also known as the vector quantity xe2x80x9cPolarization Pxe2x80x9d [5.1], exists only in the presence of an electric field.
Positive Electron Affinity: The Electric Energy Output to the electric circuit from an atom or group due to the addition of an electron to the atom or group. An Acceptor Group having a positive electron affinity attracts an electron.[2.4, 3.2]
Negative Electron Affinity: The Electric Energy Input from an electric circuit to a group to add an electron to the group. A Group with negative electron affinity repels an electron.[3.2]
Ionization Potential: The electric energy to remove an electron from an outer orbital of an atom or group of atoms.[1.3, 3.1]
Electric Energy Storage: In a quensor electric energy is stored in an dipole electric field. The dipole electric field exists in the gap between the electric charges on the positive and negative ions. The donor becomes a positively charged ion by the loss of an electron from its outer quantum orbital; and the acceptor becomes a negative ion by its outer quantum orbital acquiring an electron. The electric energy is supplied by an external electric energy source. The electric energy is stored while the dipole electric field exists.[3]
Electric Energy Retrieval: Conversely, in a quensor electric energy is retrieved from the dipole electric field by neutralizing the positive and negative charges on its ions. The electric dipole field ceases to exist when its electric energy is transferred to the load.
Electret: A dielectric material exhibiting quasi-permanent electric charge storage. [10]
Void: An empty volume of space, a vacuum containing no atoms, having a dielectric constant defined as 1.00.
ENSOR(trademark): is trademark owned by the inventor, and an acronym for ENergy Storage Or Retrieval.
04.
U.S. Pat. No. 4,442,019 entitled xe2x80x9cElectroordered Dipole Suspensionxe2x80x9d issued Apr. 10, 1984 to Alvin M. Marks, filed Jan. 5, 1981, Ser. No. 222377, and related U.S. Application data; U.S. Pat. No. 5,229,624 issued Jul. 20, 1993 to Alvin M. Marks entitled xe2x80x9cLight-Polarizing Electrically-Conducting Filmxe2x80x9d, filed Oct. 1, 1990, Ser. No. 591,051. The subject matter of said patents is included herein in whole or in part, by reference.
05.
An efficient low cost energy storage or retrieval device is critically needed to eliminate pollution by substituting for gasoline in automotive vehicles, and for many other uses. Energy storage or retrieval devices known to the art other than nuclear and combustible fuel for heat engines are: conventional capacitors, electrochemical supercapacitors, electromagnetic energy storage rings including superconducting electromagnetic energy storage rings, and storage batteries. At this time, storage batteries are the preferred electric energy storage or retrieval devices. The state of the art on storage batteries was recently summarized. [6] In Table I the energy density storage capability and other pertinent characteristics of prior art and projected storage batteries are compared with the device of the present invention. The last column shows comparative values estimated for the ENDOR(trademark) energy storage or retrieval device of this invention.
The electric energy storage per unit weight of a conventional capacitor of the prior art is limited by the maximum sustainable electric field in the insulating layer at breakdown. In a conventional capacitor the electric breakdown field in the insulating layer is usually less than 2xc3x97107 V/m (500 V/mil).[7] The electric breakdown of the insulating layer is caused by local ionization of its atoms or molecules, which produce free electrons, secondary ionization, and an avalanche of free electrons which gain energy and punch a hole in the layer, causing a short circuit.
Recent work with xe2x80x9cultrathinxe2x80x9d layer capacitors shows that electric field intensity may approach 8xc3x97108 volts/m. in an insulator thickness of 50-100 xc3x85 [7, 8]; an electric field intensity of about 40xc3x97 the conventional electrical breakdown field. In these capacitors, electric breakdown due to an electron avalanche: (1) cannot start if the applied voltage is less than the ionization potential of the material, to about 10-15 volts, (2) cannot propagate if the layer thickness between conductors is too small to support secondary ionization, less than about 200 xc3x85, (3) the thickness is sufficiently great to prevent electron tunnelling, exceeding about 40 xc3x85. [20.1, 21]
The double-layer-capacitor (DLC) concept is old in the art.[9] It employs porous carbon electrodes and an electrolyte, and is not solid state. A DLC dipole layer may support large electric fields at a low voltage: 1 to 1.6 volts across a spacing of about 2 A, or 2xc3x9710xe2x88x9210 m; that is, 0.8xc3x971010 V/m. In a DLC the sustainable electric field is increased by a factor of 400 over that of a conventional capacitor. However the utility of a DLC has been limited by the small perating voltage and excessive current leakage through the layer, which causes rapid discharge.
An electric charge may be stored in an electret (1) by poling or rotating an electrically charged group of atoms in the direction of an electric field (2) usually near the surface of a thin sheet. The greatest reported storage of electric charge density is small: about 1xc3x9710xe2x88x922 C/m2 [10.1]
The electric energy storage or retrieval device of this invention is in a distinctly new class:
1. A quensor is a solid state device, a thin polymer film having a molecular structure ordered by stretch-orientation and an electric field, a pendant donor group, a tunnelling gap, and a pendant acceptor group, and first and second metal layers on the surfaces of the film. Alternatively, in a quensor, the molecular structure may be electroordered.[24]
2. In a quensor, the donor group preferably has a high ionization potential. The donor group may be a carbon halide. [3,11,12] As a donor, fluorine has the greatest ionization potential, and as an acceptor fluorine has a high electron affinity. The donor is positively ionized by losing an electron, and the acceptor is negatively ionized by gaining an electron. In one embodiment, a fluorine atoms acts as a donor [2.3,3.1]; and, an adjacent fluorine atom acts as an acceptor.[2.4,3.2]
3. In a quensor, the gap between donor and acceptor is 5 xc3x85 to 30 xc3x85.[21 An electron may tunnel across the gap to establish a dipole electric field. Energy from an electric energy source is required to create the dipole electric field. The net electric energy stored in the dipole electric field is calculated in Sec. 08.22. An external electric energy source charges the dipole electric fields of the quensor film. Electric energy supplied to a load discharges the dipole electric fields of the quensor film.
4. There is no buildup of high voltage in the film due to space charge, because the electric charges in each cell are always balanced. The system is analogous to a plurality of condensers in series in an electric circuit. Electric energy is simultaneously stored in, or retrieved from the electric fields between the adjacent plates of all the condensers; and similarly, in a quensor, from the electric fields between adjacent donors and acceptors.
5. Electric energy from an electric energy source supplied to a cell creates a positive ion and a negative ion, and establishes a dipole electric field in the gap between them. Electric energy from the cell supplied to the load discharges the dipole electric field. An electron may only move back and forth within a cell. Each cell has atomic scale dimensions, hence electric energy may be stored in high density throughout the volume of a film. The energy density is calculated to be about 15 kWhr/kg, or more.[Sec. 08.22 and FIG. 4.]
6. To store electric energy in a quensor film, a voltage from an electric power source is applied to thes metal layers on its surfaces. The electric energy is stored in dipole electric fields throughout the volume of the quensor film.
7. In retrieving electric energy, the metal layers of the quensor film are connected to a load, the dipole electric fields throughout the volume of the quensor film are discharged, and the stored electric energy from these fields is delivered to the load.
8. The device of this invention is solid state. There is no chemical reaction. Energy is stored or released by the motion of electrons in the cells throughout the quensor film. Comparing the electric energy storage of the present invention with the prior art conventional capacitor, the sustainable electric field is about 1010 v/m an increase by a factor of about 500. Because of the atomic scale of each cell, electron motion is confined to small distances where the laws of quantum mechanics prevail; and in which no electron avalanche and no electric breakdown occurs. This enables an enormous increase in the electric energy storage or retrieval per unit weight; of the order of about 1-15 kWhr/kg, or more; and solves the problems of the prior art.
0.6.
It is an object of this invention to provide an electric storage or retrieval device having about the same electric energy storage as the useful mechanical energy provided by an equal weight of gasoline; that is, about 15 kWhr/kg.; or 54,000 kJ/kg.[Sect 08.21]
It is a further object of this invention to provide an electric energy storage device made of noncombustible and nontoxic materials.
It is a further object of this invention to provide an electric storage device with a small leakage factor, to enable the stored electric energy to remain available over long periods of time.
An object of this invention is to eliminate air pollution due to the combustion of oil or gasoline from the exhaust of gases from the automobile, which add carbon dioxide and toxic pollutants to the atmosphere, contributing to the Greenhouse Effect and to respiratory disease due to Smog.
An important object of this invention is to provide a low-cost solid state electric energy source as a substitute for gasoline, having about the same energy/weight ratio, to enable an electric drive to replace the gasoline engine.
It is a further object of this invention to provide an electric storage device which is simple to manufacture and low enough in cost to compete successfully with gasoline, making the use of an electric car feasible for long distance travel.
It is a still further object of this invention to universally provide a solid state high energy/weight ratio electric energy storage or retrieval device for cars, planes, spacecraft, computers, TV and for a myriad of other uses.
It is an important object of this invention to provide a solid state device for the storage of electric energy from a solar electric energy source, or for connection to an electric circuit for electric energy utilization on demand.
07.

Quantum energy storage or retrieval device


An idler roller (4, 5, 6) for supporting an endless belt (2) in a roller conveyor (1) that includes a frame (7) for mounting the idler roller (4, 5, 6) to the conveyor (1), a support shaft (8) mountable to the frame (7) for supporting the idler roller (4, 5, 6) and a roller casing (9) rotatably mountable to the shaft (8) by a bearing assembly (10). The bearing assembly is substantially enclosed within the roller casing. The idler roller (4, 5, 6) is cantilevered to the conveyor (1) such that the bending moment of a load exerted on the roller casing (9) is displaced onto the bearing assembly (10).

Any discussion of the prior art throughout the specification should in no way be considered as an admission that such prior art is widely known or forms part of the common general knowledge in the field.
Roller conveyors are universally used for transporting bulk solids, especially bulk particulate material, such as minerals, including coal. Generally, roller conveyors include an endless belt mounted on a series of idler rollers. The endless belt is driven over the idler rollers in operation, the idler rollers supporting the endless belt as well as the bulk solids.
In general, the idler roller includes a roller casing, an internal shaft and a set of bearings for allowing the casing to rotate about the internal shaft. The internal shaft typically extends the full length, or longer than, the length of the idler roller casing. The bearings are provided, in general, close to either end of the roller casing in a two point support configuration. Most idler rollers in service are of this two point support type, called a through-shaft type idler roller.
A disadvantage of this through-shaft type of idler roller is the excess mass of the unit, due to wasted material being needed for the long static shaft. To reduce weight, the shaft and bearings are kept small. However, this leads to significant bending loads being imposed on the shaft and therefore requires bearings to have substantial tolerance for angular error. This in turn compromises the expected life of the bearings and increases the frequency of service and maintenance of each idler roller. This angular displacement also leads to the use of labyrinth seals over lip seals, resulting in a more complex unit.
Another disadvantage is that during operation of the conveyor a considerable amount of dust, moisture and other contaminants is deposited by the bulk solid, around the idler rollers, leading to the ingress of these contaminants past the dust and labyrinth seal into the upper bearing and casing below. This causes increased idler roller drive torque, idler roller failure and even belt damage.
Finally, removal of the through-shaft type from an assembled roller conveyor can be problematic, where the conveyor belt has to be substantially raised in order to lift the shaft ends of the idler roller from their respective support slots in the idler roller frame. This increases the risk of injury during removal, maintenance and replacement of the idler rollers.


A system according to an exemplary aspect of the present disclosure includes, among other things, a generator-detector configured to be attached to a pipe. The generator-detector is configured to measure the concentration of mercury in the pipe in a non-destructive manner. A method is also disclosed.

This disclosure relates to a Mercury-in-Pipe Assessment Tool (MiPAT) for non-destructive analysis of all forms of mercury (Hg) present in process equipment including but not limited to vessels, piping, hoses, pumps, exchangers, and all types of pipelines. The MiPAT of this disclosure provides oil and gas producers, for example, with the ability to cost-effectively assess and monitor the concentration and distribution of adsorbed, absorbed, chemisorbed, and free liquid phase mercury in oil and gas production, gathering, and processing systems and pipelines including subsea pipelines.
Current methods for the measurement of mercury in pipe are limited. One common method includes using a field portable handheld x-ray spectrometer to analyze an open end of a pipe or a coupon, which is a section of pipe that has been removed. Another technique involves pipe coupon digestion using a wet chemistry method, such as acid digestion, to prepare pipe coupons for analysis by AFS (atomic fluorescence spectroscopy) or AAS (atomic absorption spectroscopy), as examples. Another known method includes thermal desorption of a pipe coupon at about 800° C. to prepare the sample for analysis by AFS or AAS.

Mercury-in-pipe assessment tool and method of using the same


A method of embedding the edit distance metric into the Hamming distance metric with low distortion. In other words, two input character strings are mapped to two corresponding output bit strings such that the Hamming distance between the output strings is approximately proportional to the edit distance between the two corresponding input strings.

An edit distance between two character strings is the number of single-character insert and delete keyboard operations required to change a first string into the second string. We denote the edit distance between string x and string y as ed(x, y). A Hamming distance between two bit strings of the same length is the number of bits in the first string that must be switched to result in the second string, or in other words, the number of bit positions in which the two strings differ. We denote the Hamming distance between string x′ and string y′ as H(x′, y′). For ease of expression we refer to input strings in general as character strings, and output strings as bit strings, since we are discussing mapping character strings (in the edit distance metric) to bit strings (in the Hamming distance metric). However, details of the method described herein may refer to input strings as bit strings as well.
There are many useful applications involving strings for which very efficient solutions are known in the Hamming distance metric, including sketching and nearest neighbor search. See, e.g., U.S. Pat. No. 6,226,640 (the '640 patent) issued May 1, 2001, to Ostrovsky and Rabani, titled "Method for determining approximate hamming distance and approximate nearest neighbors of a query," the contents of which is incorporated by reference as if set forth fully herein. For character strings in the edit distance metric, such solutions are scarce but needed. For example, edit distance plays a central role in text processing and many web applications. Furthermore, fast estimation of edit distance and efficient search according to the edit distance are widely investigated and used in computational biology. Thus, it would be desirable to provide a method to map input character strings to output bit strings such that the Hamming distance between two output bit strings is approximately proportional to the edit distance between their corresponding input character strings. Such a mapping would allow known procedures in the Hamming distance metric to be performed on the output strings and yield similar (within an accepted tolerance) results as if the procedures were available in the edit distance metric and were performed on the input character strings in the edit distance metric.
Previously, such a mapping was not known, as stated in the following publication, the contents of which is incorporated by reference as if set forth fully herein: "Lower bounds for embedding edit distance into normed spaces." A. Andoni, M. Deza, A. Gupta, P. Indyk, and S. Raskhodnikova. Proc. of the 14th Ann. ACM-SIAM Symp. on Discrete Algorithms, Baltimore, Md., January 2003, pages 523-526.

Method for low distortion embedding of edit distance to Hamming distance

The Regents of the University of California

The TRDF Research & Development Foundation Ltd


A composite electrode for electrochemical processing having improved high temperature properties, and a process for making the electrode by combustion synthesis. A composition from which the electrode is made by combustion synthesis comprises from about 40% to about 90% by weight of a particulate or fibrous combustible mixture which, when ignited, is capable of forming an interconnected network of a ceramic or metal-ceramic composite, and from about 10% to about 60% by weight of a particulate or fibrous filler material capable of providing the electrode with improved oxidation resistance and maintenance of adequate electrical conductivity at temperatures above 1000.degree. C. The filler material is molybdenum silicide, silicon carbide, titanium carbide, boron carbide, boron nitride, zirconium boride, cerium oxide, cerium oxyfluoride, or mixtures thereof.

1. Field of the Invention
This invention relates to an electrode for use in electrochemical processing having improved oxidation and corrosion resistance in comparison to prior art electrodes used for the same purposes, which can be readily produced by a process involving combustion synthesis to form a core body having an interconnected network of a ceramic or metal-ceramic composite in which is uniformly dispersed a filler material. Although not so limited the invention has particular utility in the provision of an anode and a cathode for the electrowinning of aluminum from its ore in the Hall-Herault process. The electrode of the present invention provides improved oxidation resistance at temperatures above 1000.degree. C. with retention of satisfactory electrical and thermal conductivity at such elevated temperatures.
2. Description of the Prior Art
U.S. patent application Ser. No. 07/648,165, filed Jan. 30, 1991, in the names of Jainagesh A. Sekhar and Sarit B. Bhaduri, and assigned to the assignee of the present application, discloses a composite electrode for electrochemical processing and a method for preparation thereof by combustion synthesis. Such an electrode comprises at least 20% by weight of a ceramic composite or a metal-ceramic composite in the form of a dimensionally stable interconnected network, at least about 15% by weight of a filler material providing desired electrochemical properties, the filler material being uniformly dispersed in the composite network, and up to about 35% by weight of a binder phase associated with the network and the filler material. The ceramic or metal-ceramic composite network is derived from a wide range of combustible mixtures which, when ignited, form the composite interconnected network or core. Filler materials are selected from a variety of nitrides, oxides, borides, carbides, silicides, oxyfluorides, phosphides, metals, and/or carbon. While the compositions and method of preparation of this application produce a dimensionally stable product, it has been found that electrodes made in accordance with the process are not stable above 1000.degree. C.
"Encyclopedia Of Materials Science", Vol. 2, Michael B. Bever, editor-in-chief, Pergamon Press, 1986, page 1413, summarizes the state of the art relating to electrode materials for electrochemical processing, including electrochemical research, electrolytic production of hydrogen, chlorine, chlorates, perchlorates, electrowinning of aluminum, and other electrochemical processes. At page 1413, a discussion of the electrometallurgy of aluminum points out that electrolysis of a cryolite-alumina (Na.sub.3 AlF.sub.6 +Al.sub.2 O.sub.3) melt is carried out using a carbon anode and an aluminum cathode to yield aluminum on the basis of the reaction: EQU 2Al.sub.2 O.sub.3 +3C.fwdarw.4Al+3CO.sub.2
Carbon dioxide is formed at the anode. The types of carbon anode presently used are described, and it is also pointed out that carbon is used as a cell lining in the reduction cell. Lining failure and anode consumption are recognized as being major disadvantages in the present process.
The use of combustion synthesis (CS), also referred to as self-propagating high-temperature synthesis (SHS), for a variety of applications is reviewed by H.C. Yi et al, in Journal Materials Science, 25, 1159-1168 (1990). It is concluded that almost all the known ceramic materials can be produced using the SHS method, in product forms including abrasives, cutting tools, polishing powders; elements for resistance heating furnaces; high temperature lubricants; neutron attenuators; shape-memory alloys; high temperature structural alloys; steel melting additives; and electrodes for electrolysis of corrosive media. It is acknowledged that considerable research is needed, and major disadvantages arise in "achieving high product density and tight control over the reaction and products."
This article reports numerous materials produced by SHS and combustion temperatures for some of them, viz., borides, carbides, carbonitrides, nitrides, silicides, hydrides, intermetallics, chalcogenides, cemented carbides, and composites.
Combustion wave propagation rate and combustion temperature are stated to be dependent on stoichiometry of the reactants, pre-heating temperature, particle size, and amount of diluent.
J.W. McCauley et al, in "Simultaneous Preparation and Self-Centering Of Materials In The System Ti-B-C", Ceramic Engineering and Science Proceedings, 3, 538-554 (1982), describe SHS techniques using pressed powder mixtures of titanium and boron; titanium, boron and titanium boride; and titanium and boron carbide. Stoichiometric mixtures of titanium and boron were reported to react almost explosively (when initiated by a sparking apparatus) to produce porous, exfoliated structures. Reaction temperatures were higher than 2200.degree. C. Mixtures of titanium, boron and titanium boride reacted in a much more controlled manner, with the products also being very porous. Reactions of titanium with boron carbide produce material with much less porosity. Particle size distribution of the titanium powder was found to have an important effect, as was the composition of the mixtures. Titanium particle sizes ranging from about 1 to about 200 microns were used.
R.W. Rice et al, in "Effect Of Self-Propagating Synthesis Reactant Compact Character On Ignition, Propagation and Resultant Microstructure", Ceramic Engineering and Science Proceedings. 7, 737-749 (1986), describe SHS studies of reactions using titanium powders to produce TiC, TiB.sub.2 or TiC+TiB.sub.2. Reactant powder compact density was found to be a major factor in the rate of reaction propagation, with the maximum rate being at about 60.+-. 10% theoretical density. Reactant particle size and shape were also reported to affect results, with titanium particles of 200 microns, titanium flakes, foil or wire either failing to ignite or exhibiting slower propagation rates. Particle size distribution of powder materials (Al, BC, Ti) ranged from 1 to 220 microns.
U.S. Pat. No. 4,909,842, issued Mar. 20, 1990 to S.D. Dunmead et al, discloses production of dense, finely grained composite materials comprising ceramic and metallic phases by SHS combined with mechanical pressure applied during or immediately after the SHS reaction. The ceramic phase or phases may be carbides or borides of titanium, zirconium, hafnium, tantalum or niobium, silicon carbide, or boron carbide. Intermetallic phases may be aluminides of nickel, titanium or copper, titanium nickelides, titanium ferrides, or cobalt titanides. Metallic phases may include aluminum, copper, nickel, iron or cobalt. The final product is stated to have a density of at least about 95% of the theoretical density only when pressure is applied during firing, and comprises generally spherically ceramic grains not greater than about 5 microns in diameter in an intermetallic and/or metallic matrix.
U.S. Pat. No. 4,948,767, issued Aug. 14, 1990 to D. Darracq et al, discloses a ceramic/metal composite material, which may be used as an electrode in a molten salt electrolysis cell for producing aluminum, having at least one ceramic phase and at least one metallic phase, wherein mixed oxides of cerium and at least one of aluminum, nickel, iron and copper are in the form of a skeleton of interconnected ceramic oxide grains, the skeleton being interwoven with a continuous metallic network of an alloy or intermetallic compound of cerium with at least one of aluminum, nickel, iron and copper. The ceramic phase may include "dopants" for increasing its electrical conductivity and/or density. The dopants may comprise pentavalent elements such as tantalum and niobium, or rare earth metals. Inert reinforcing fibers or tissues may also be present. The method of production involves reactive sintering, reactive hot-pressing or reactive plasma spraying a precursor mixture containing a cerium oxide, fluoride and/or boride and/or at least one of aluminum, nickel, iron and copper. When used as an anode, the material is coated with a protective layer of cerium oxyfluoride. A significant disadvantage of the process disclosed in this patent arises when the constituents have widely different melting points, which makes sintering or hot pressing into a dimensionally stable product impossible. Plasma spray is a very limited technique which is unsuitable to form a large anode or similar product within a reasonable time. It is also recognized that sintering of oxide and non-oxide materials is rarely possible, and the interface bonding of materials by this technique may be inadequate for acceptable mechanical and electrical properties.
Despite the recognition of the disadvantages of prior art electrodes and the suggestion of the possibility of producing electrodes by CS, to the best of applicant's knowledge there has been no successful application of CS techniques in the production of net shaped composite electrodes for electrochemical processing which possess improved oxidation resistance while retaining adequate electrical conductivity at temperatures above 1000.degree. C.
The Yi et al article acknowledged above does not recognize or suggest the possibility of making composite electrodes by CS wherein desired properties are achieved by uniform dispersion of filler material in a ceramic or metal-ceramic core body.
It is apparent that a need exists for an electrode suitable for electrochemical processing, which exhibits improved oxidation and corrosion resistance and retains satisfactory electrical conductivity at temperatures above 1000.degree. C., and which avoids the disadvantages inherent in conventional electrodes.

Composite electrode for electrochemical processing having improved high temperature properties and method for preparation by combustion synthesis


A device for delivering a heparinic anticoagulant across a mucosal surface in order to achieve or maintain a therapeutically effective blood level of the heparinic anticoagulant. The device involves a matrix containing a therapeutically effective amount of a heparinic anticoagulant, and a mucoadhesive or other mechanism for maintaining the matrix in contact with the mucosal surface for a time sufficient to allow release of the heparinic anticoagulant to the mucosal surface.

1. Field of the Invention
This invention relates to transmucosal drug delivery systems. In another aspect this invention relates to drug delivery systems containing a heparinic anticoagulant, such as a heparin or a heparin fragment.
2. Description of the Related Art
Transmucosal drug delivery systems are designed to deliver a therapeutically effective amount of drug across a mucosal surface, typically the oral mucosa, of a patient. Delivery of drugs across the oral mucosa avoids hepatic first-pass inactivation, poor or erratic absorption from the gastro-intestinal tract, inactivation by gastro-intestinal fluids, and other modes of inactivation characteristic of oral drug ingestion. Sustained release adhesive bandages, patches, and the like that contain drugs are known to the art.
Patent Application WO 90/06505 (Scholz et al.) discloses a bioadhesive composition comprising drug and a particulate polymeric resin dispersed in a hydrophobic elastomeric component. CARBOPOL.TM. resins are among the polymeric resins said to be suitable and the hydrophobic resin can be a mixture of VISTANEX.TM. L100 polyisobutylene and VISTANEX LMMH polyisobutylene.
Heparin is an anionic polysaccharide of mammalian origin having anticoagulant properties. It is a heterogeneous mixture of variably sulfated polysaccharide chains composed of repeating units of D-glucosamine and either L-iduronic or D-glucuronic acids. The molecular weight ranges from 6,000 to 30,000 daltons. Heparin is strongly acidic because of its content of covalently linked sulfate and carboxylic acid groups. In heparin sodium, the acid protons of the sulfate units are partially replaced by sodium ions. Heparin is biosynthesized and stored in mast cells of various animal tissues, particularly liver, lung or gut. Commercial heparin is isolated from beef lung or pork intestinal mucosa. Heparin is given parenterally for the treatment and prophylaxis of thrombo-embolic disorders and as an adjunct to thrombolytic therapy.
Low molecular weight (1500-8000 daltons) heparins are fragments of heparin with anticoagulant activity. They can be obtained by chemical or enzymatic depolymerization of standard heparin. Commercially available low molecular weight heparins differ in their method of production, molecular weight range, chain end groups and degree of sulfation. Like heparin, these compounds inhibit the action of antithrombin III but they are characterized by a higher ratio of anti-factor-Xa to anti-thrombin activity than heparin. Low molecular weight heparins have less effect on platelet aggregation than heparin. They are used in the treatment and prophylaxis of venous thromboembolism. Therapy may be monitored by measurement of plasma anti-factor-Xa activity.
Dalteparin sodium is prepared by the nitrous acid degradation of heparin obtained from the intestinal mucosa of pigs. The majority of the components have a 6-O-sulpho-2,5-anhydro-D-mannitol structure at the reducing end of the chain. The molecular weight of 90% of the components is between 2000 and 9000 daltons and the average molecular weight is about 5000 daltons. The sulfur content is about 11%.
Enoxaparin sodium is prepared by alkaline degradation of heparin benzyl ester obtained from the intestinal mucosa of pigs. The majority of the components have a 2-O-sulfo-4-enepyranosuronic acid structure at the non-reducing end and a 2-N,6-O-disulpho-D-glucosamine structure at the reducing end of the chain. The molecular weight ranges between 3500 and 5500 daltons and the average molecular weight is about 4500 daltons. The degree of sulfation is about 2 per disaccharide unit.
Nadroparin calcium is prepared by nitrous acid degradation of heparin obtained from the intestinal mucosa of pigs. The majority of the components have a 2-O-sulpho-.alpha.-L-idopyranosuronic acid structure at the non-reducing end of the chain and a 6-O-sulpho-2,5-anhydro-D-mannitol structure at the reducing end of the chain. The average molecular weight is about 4500 daltons. The degree of sulfation is about 2.1 per disaccharide unit.
Parnaparin sodium is prepared by hydrogen peroxide and copper(II)acetate degradation of heparin obtained from the intestinal mucosa of pigs. The majority of the components have a 2-N,6-O-sulpho-2,5-D-glucosamine structure at the reducing end of the chain. The molecular weight ranges between 4000 and 5000 daltons. The degree of sulfation is about 2.15 per disaccharide unit.
Reviparin sodium is prepared by nitrous acid degradation of heparin obtained from the intestinal mucosa of pigs. The majority of the components have a 2-O-sulpho-.alpha.-L-idopyranosuronic acid structure at the non-reducing end of the chain and a 2-N,6-O-disulpho-D-mannitol structure at the reducing end of the chain. The molecular weight of 90% of the components is between 2000 and 8000 daltons and the average molecular weight is 3500 to 4500 daltons. The degree of sulfation is about 2.2 per disaccharide unit.
Tinzaparin sodium is prepared by enzymatic degradation of the intestinal mucosa of pigs. The majority of the components have a 2-O-sulpho-4-enopyranosuronic acid structure at the non-reducing end of the chain and a 2-N,6-O-disulpho-D-glucosamine structure at the reducing end of the chain. The molecular weight of 70% of the components is between 1500 and 10,000 daltons and the average molecular weight is about 4500 daltons. The degree of sulfation is 2.0 to 2.5 per disaccharide unit.