A microarray obtainable by slicing a block comprising a plurality of linear bodies or through-holes which carry an organism-related substance, in a direction intersecting the longitudinal direction of the linear bodies or through-holes, wherein the linear body and/or block comprise a substance that reduces the self-fluorescence thereof.

Recently, new analysis methods and methodologies known as DNA microarray methods (DNA chip methods) which allow one-operation expression analysis of numerous genes, have been developed and now attract attention. These methods do not differ in principle from conventional methods in respect of the fact that they are nucleic acid detection and quantification methods based on nucleic acid-nucleic acid hybridization. However, a major characteristic of these methods is the utilization of a microarray or chip which comprises a large number of DNA fragments aligned and immobilized at high density on a flat substrate. Examples of a specific method of using a microarray method include hybridizing a sample of expression genes of a test subject cell labeled with fluorescent pigment on a flat substrate slice, allowing mutually complimentary nucleic acids (DNA or RNA) to bind with one another and after labeling these locations with fluorescent pigment, rapidly reading with a high resolution analysis device. In this way, respective gene amounts in a sample can be rapidly estimated. That is, the introduction of these new methods has enabled a reduction in reaction sample amount, and high volume, rapid, systematic analysis and quantification of these reaction samples with good reproducibility.
As methods of producing these DNA microarrays, there have been disclosed a method wherein DNA is compartmentalized and immobilized on a glass substrate, and a method wherein nucleic acids are synthesized one by one on compartmentalized regions on a silicon substrate using photolithography techniques used in the production of semiconductor chips (U.S. Pat. No. 5,445,934; U.S. Pat. No. 5,774,305).
Further, there have been disclosed a method of a obtaining a DNA microarray wherein DNA is immobilized on linear bodies comprising glass or high molecules, and these linear bodies are sheet-rolled together with adhesive, and sliced in the direction of the cross-section of the fiber (Japanese Patent Publication (Unexamined Application) No. 11-108928); a method of obtaining a DNA microarray wherein a plurality of fibers have DNA etc. immobilized thereon, these are bundled together and this bundle is sliced across the longitudinal direction of the fibers DNA microarray (Japanese Patent Publication (Unexamined Application) No. 2000-245461); and further a method of obtaining a DNA microarray wherein a plurality of through-holes are made in a resin block, and after the these holes are made to carry DNA etc., the block is sliced (Japanese Patent Publication (Unexamined Application) No. 2000-78998). Because these methods of production allow a plurality of microarrays to be prepared by repeated slicing, they are particularly preferable methods for mass producing chips having the same sequences.
For example, in general, detection of specific DNA within an analyte using the DNA microarrays exemplified above, is performed by fluorescence-labeling probe DNA immobilized on the chip, or analyte DNA, irradiating the probe or analyte which has formed a hybrid due to performing operations such as hybridization etc., with fluorescence excitation light from an external source, and detecting fluorescence excitation emitted from the fluorescent molecules.
However, when detecting an organism-related substance such as DNA which is contained in an analyte in only trace amounts, fluorescence other than that emitted from the probe or analyte, specifically, self-fluorescence of the substrate etc., carrying the probe, is detected as noise, and there was the problem that trace amounts of an organism-related substance could not be detected.
Further, a method of producing a plurality of microarrays by repeated slicing is superior in respect of the fact that a large amount of microarrays having the same arrangement can be mass produced. However, there is the problem that curvature of the microarray occurs.


Inventive antireflective structures comprise a semiconductor substrate having thereon a combination of a plurality of layers that either that absorb reflected light or that dissipate reflected light into patterns and intensities that do not substantially alter photoresist material on the semiconductor substrate. The semiconductor substrate has formed thereon a feature having a width of less than about 0.25 microns. Antireflective structures contemplated include a first layer of polysilicon and first layer of silicon nitride material that is formed upon the first layer of polysilicon. The antireflective structure has the ability to scatter unabsorbed light into patterns and intensities that are substantially ineffective to alter photoresist material exposed to said patterns and intensities. A first antireflective structure comprises a first layer of polysilicon disposed upon on a semiconductor substrate, a second layer of silicon nitride material disposed upon the first layer of polysilicon, and a masking layer disposed upon the second layer of silicon nitride material. A second antireflective structure comprises a first layer of polysilicon disposed upon on a semiconductor substrate, a first layer of nitride material disposed upon the first layer of polysilicon, a second layer of polysilicon disposed upon the first layer of silicon nitride material, and a masking layer disposed upon the second layer of polysilicon. A third antireflective structure comprises a first layer of polysilicon disposed upon on a semiconductor substrate, a first layer of silicon nitride material disposed upon the first layer of polysilicon, a second layer of polysilicon disposed upon the first layer of silicon nitride material, a second layer of silicon nitride material disposed upon the second layer of polysilicon, and a masking layer disposed upon the second layer of silicon nitride material.

1. The Field of the Invention
The present invention relates to the fabrication of integrated circuits. More particularly, the present invention relates to an anti-reflective enhancement for integrated circuit fabrication. In particular, the present invention relates to an anti-reflective enhancement for reducing critical dimension loss during mask patterning.
2. The Relevant Technology
In the microelectronics industry, a substrate refers to one or more semiconductor layers or structures which includes active or operable portions of semiconductor devices. In the context of this document, the term "semiconductive substrate" is defined to mean any construction comprising semiconductive material, including but not limited to bulk semiconductive material such as a semiconductive wafer, either alone or in assemblies comprising other materials thereon, and semiconductive material layers, either alone or in assemblies comprising other materials. The term substrate refers to any supporting structure including but not limited to the semiconductive substrates described above.
In the microelectronics industry, the process of miniaturization entails shrinking the size of individual semiconductor devices and crowding more semiconductor devices within a given unit area. With miniaturization, problems arise with proper electrical isolation between components. When miniaturization demands the shrinking of individual devices, isolation structures must also be shrunk. Attempts to isolate components from each other in the prior art are limited to photolithographic limits of about 0.25 microns. One way to form structures that electrically isolate conductive materials on a semiconductor substrate from each other is to use photolithography in patterning dielectrics layers upon the semiconductor substrate.
To form an isolation trench on a semiconductor substrate by photolithography, a photoresist mask through which the isolation trench is etched generally utilizes a beam of light, such as ultraviolet (UV) light and deep UV (DUV) light, to transfer a pattern through an imaging lens from a photolithographic template to a photoresist coating which has been applied to the structural layer being patterned. The pattern of the photolithographic template includes opaque and transparent regions with selected shapes that match corresponding openings and intact portions intended to be formed into the photoresist coating. The photolithographic template is conventionally designed by computer assisted drafting and is of a much larger size than the semiconductor wafer on which the photoresist coating is located. Light is directed through the photolithographic template and is focused on the photoresist coating in a manner that reduces the pattern of the photolithographic template to the size of the photolithographic coating and that develops the portions of the photoresist coating that are unmasked and are intended to remain. The undeveloped portions are thereafter easily removed. Other photolithographic techniques for formation of isolation trenches are also possible.
The resolution with which a pattern can be transferred to the photoresist coating from the photolithographic template is currently limited in commercial applications to widths of about 0.25 microns. In turn, the dimensions of the openings and intact regions of the photoresist mask, and consequently the dimensions of the shaped structures that are formed with the use of the photoresist mask, are correspondingly limited. Photolithographic resolution limits are thus a barrier to further miniaturization of integrated circuits. Accordingly, a need exists for an improved method of forming isolation trenches that have a size that is reduced from what can be formed with conventional photolithography.
During photolithography, reflected light that occurs during exposure of a mask tends to blur the desired image because the reflected light escapes beyond exposed regions on the photoresist. The blurring problem is caused by reflected light affecting areas of the photoresist that are outside the design pattern.
FIG. 1 illustrates the problem of blurring caused by reflected light that occurs during exposure of a photoresist. A semiconductor structure 10 may be, for example, an isolated active area 8X that was designed to have a width D, but due to blurring caused by reflectivity of patterning light from structures beneath the photoresist, isolated active area 8X has an actual width A. The variance between design width D and actual width A is illustrated as the distance 2(B/2) or B. By way of example, isolated active area 8X was designed to have a width D of 10 in arbitrary units, but due to blurring caused from reflectivity, the actual width A is nine in arbitrary units. It can be seen that a ten percent variance between design and actual width has occurred.
As miniaturization technology continues, a blurring variance of B as illustrated in FIG. 1 will increase relative to an ever-decreasing design width D. Thus, as also illustrated in FIG. 1, an isolated active area 8Z that may have a design width D' of, for example two and one-half in arbitrary units, variance B will have the effect of causing a 40 percent error. A variance B may leave insufficient space upon isolated active area 8Z to form desired contacts or structures. It can be seen from the demonstration illustrated in FIG. 1, that the need to eliminate or substantially reduce blurring must keep pace with miniaturization.
Prior art methods for avoiding reflected light and its photoresist blurring problems include using layers such as titanium nitride or organic materials that reduce the reflected light in order to better control resolution of the photoresist.
Another hindrance to photolithographic limitations are conventional antireflective coating (ARC) schemes. As the ever-increasing pressure to miniaturize bears upon the microelectronics industry, the conventional antireflective enhancements such as a titanium nitride layer, organic layers, or other layers known in the art are proving inadequate at resolutions below about 0.25 microns.
One problem at a dimension below about 0.25 microns is that of fouling caused by titanium nitride or organic materials. Fouling is defined as a tendency for a selected antireflective layer to resist staying within preferred boundaries. Resistance to staying within preferred boundaries tends to cause photolithographic techniques to be compromised.
When the ARC is a polymer film, it is applied directly to the semiconductor structure to a thickness of about 0.5 microns and photoresist is deposited on top of the ARC. The ARC then has the function of absorbing most of the radiation used during exposure of the resist that penetrates the resist material. Both standing wave effects and destructive scattering from typographical features are suppressed with use of the ARC. A disadvantage of a polymer film ARC is that the process is increased in complexity and dimensional control may be lost. A polymer film ARC requires application by spin coating of the ARC material and pre-baking of same before applying the photoresist material. A problem of removing the ARC exists following an etch. For example, during anisotropic etching, portions of a photoresist are mobilized and form a liner within a recess that is being etched that further assists in achieving the anisotropic etch. Due to the anisotropic etch, however, the photoresist that was mobilized may have mingled with other elements that cause it to resist removal by conventional stripping techniques. This resistance to stripping requires stripping solutions that have a chemical intensity that may detrimentally effect the structure that was achieved during the anisotropic etch. Thus, using a substance that is intended to aid antireflectivity the benefit thereof mitigated by the requirement of a more chemically intensive stripping solution treatment.
Another method of attempting to avoid reflected light is to use a metallic mask. Metallic materials, however, can cause contamination of the semiconductor structure due to the high mobility of metal ions in wet chemical environments or in dry-etch vapors. Additionally, although a metallic mask may remain as part of a finished semiconductor structure, a metallic mask may not be able to properly withstand high processing temperatures sometimes required to achieve a preferred semiconductor structure.
One application in the microelectronics industry is to isolate active areas by substantially surrounding them with dielectric structures. As dimensions shrink below about 0.25 microns, the prior art technique of growing a local oxidation of silicon (LOCOS) to isolate an active area becomes more difficult to achieve. This difficulty is due to the inability to control encroachment of the LOCOS structure into the active area during growth of the LOCOS. Several techniques have been developed to control the encroachment of what is called the "bird's beak" of the LOCOS into the active area, but these techniques require extra operations, each of which adds to fabrication time and cost as well as tending to lower overall fabrication yield.
Alternatively, isolated active areas have been fabricated by forming trenches on either side of a semiconductor region and by depositing dielectric materials into the trenches. The challenge for isolation trenches that isolate an active area with a width of less than about 0.25 microns is in overcoming the inherent problems of reflected light and antireflective coatings of the prior art as discussed above. Light that is reflected during exposure of a photoresist tends to blur the boundary between the active area and the trench such that the trench that is eventually etched encroaches into a designed active area and the designed active area is dimensionally compromised or rendered defective.
In general, several problems are caused by reflected light in photolithographic techniques which blur the edge of a critically dimensioned photoresist layer. In addition to problems experienced in forming isolation trenches, contact corridors, vias, and wiring trenches that must be patterned below about 0.25 microns are also blurred and are therefore widened beyond that which is preferred. A contact corridor that is too wide will cause notching into a gate stack during a contact corridor etch. Notching causes encroachment into conductive areas of a gate stack and filling the contact corridor with metallization causes a short to occur between the contact and the conductive elements of the gate stack. A trench that is too wide will cause "cross talk" between neighboring trenches so as so to compromise speed and accuracy of the integrated circuit associated therewith.
What is needed is an antireflective coating scheme that does not substantially add to fabrication cost and does not substantially reduce fabrication yield. What is also needed is an antireflective coating scheme that imparts an antireflective quality to photolithographic techniques not previously achieved in the prior art. What is also needed is an antireflective coating scheme that does not cause fouling of the semiconductor structure. Additionally, what is needed is an antireflective coating scheme that either does not require removal, or that can be removed without causing contamination or damage to the semiconductor structure. What is also needed is an antireflective coating scheme that facilitates a better photoresist profile and better control of critical dimensions due to better prevention of reflected light than is found in the prior art.


A liquid distribution apparatus for distributing liquid to a dough product includes a source of liquid and an enclosure fluidly coupled to the source of liquid for receiving liquid. The enclosure includes a plurality of spaced-apart holes through which the liquid exits the enclosure. Preferably, a plurality of guide structures on the enclosure guide the liquid to a bottom surface of the enclosure whereat the liquid drops to the dough product. In a further embodiment, a plurality of guiding elements receives the liquid from the plurality of spaced-apart holes and guides the liquid to the dough product. Each guiding element includes a first end disposed proximate the enclosure to receive liquid from one of the plurality of spaced-apart holes and a second end remote from each corresponding first end.

The present invention relates to dough processing lines. More particularly, the present invention relates to an apparatus for distributing a liquid onto a dough product as it moves along a conveyor line.
It is often desirable to apply a liquid to a dough product as it travels along a conveyor line. For example, when producing a laminated dough product, it is necessary to provide layers of oil in the dough. In another application, a layer of oil is applied to individual dough pieces prior to stacking upon each other. The layer of oil permits easy separation of the pieces from each other at a later time.
Typically, the oil is applied to the top surface of the sheet of dough or dough pieces using sprayers. Spraying permits uniform distribution of the oil on the top surface of the dough, but this technique requires periodic cleaning of the spraying apparatus and surrounding environment adjacent the sprayer due to the fine mist of oil dispersed from the sprayers. The problem is compounded if the dough has a layer of flour on its surface prior to application of the oil since the force of the oil as it is sprayed also results in flour being dispersed from the dough surface. The dispersed flour and oil quickly coat components of the conveyor line. These components must be frequently cleaned, during which the conveyor and product line are shut down.
The present invention relates to an apparatus for dispensing liquid on a dough processing line that avoids the problems associated with spraying or atomizing the liquid. Another approach for solving this problem is disclosed in co-pending application entitled "SYSTEM FOR APPLYING FLUID STRIP TO DOUGH" filed on even date herewith having Ser. No. 08/720027.

Liquid distribution apparatus for a dough processing line


When a PC (a transmission device) transmits an externally taken-in audio file to an electronic dictionary (a receiving device), the PC encodes the audio file and stores the compressed audio file into its own memory temporarily. On the basis of the file management data created by a file management system when the compressed audio file was stored in the memory, the PC generates a file list for the audio files to be transferred. The file list is encrypted using an encryption key. Then, the encryption key, encrypted file list, and compressed audio file are transmitted to the electronic dictionary. The electronic dictionary stores the encrypted file list and compressed audio file into an SD card and decrypts the encrypted file list using the encryption key. When the decrypted file list corresponds to the compressed audio file, the process of expanding the compressed audio file into an audio file is permitted.

1. Field of the Invention
This invention relates to an audio data reproduction system and an audio data reproduction method which transfer audio data loaded from an external storage medium, such as compact disc (CD), into a personal computer (PC) to a mobile terminal and reproduce the audio data at the terminal, and an electronic device used in the system.
2. Description of the Related Art
Audio data recorded in an external recording medium, such as a compact disc (CD), is loaded into a personal computer (PC) and the audio data loaded into the PC is further transferred to a mobile terminal, which makes it easy to carry around and reproduce the audio data transferred to the mobile terminal.
When the audio data recorded on the CD has been protected under copyright law, a person who has purchased the CD through the proper channel is permitted to copy the audio data for personal use only. For this reason, if having bought the CD through the proper channel, the user can transfer the audio data from the user's PC to a mobile terminal and use the data.
However, transferring and recording (copying) the audio data loaded into the person's PC to another person's mobile terminal and using the data are regarded as unauthorized use. To overcome this problem, the following method has been considered: a unique encryption key is generated between a device (e.g., PC) on the audio data transmission side and a device (e.g., mobile terminal) on the receiving side, the audio data is encrypted using the encryption key and the encrypted data is transmitted, and the received audio data is decrypted using the encryption key and reproduced, thereby preventing unauthorized use.
In this method, since all of the audio data are to be encrypted, this imposes a heavier burden of encryption on the device on the audio data transmission side and further a heavier burden of decryption on the device on the receiving side. Consequently, both of the devices require sophisticated processors.
To avoid this problem, an audio data reproduction apparatus and an audio data reproduction method have been considered which transmit audio data without encrypting a part of the audio data, thereby alleviating the burden of encryption and decryption as disclosed in Jpn. Pat. Appln. KOKAI Publication No. 2005-114931.
However, in the conventional audio data reproduction apparatus and audio data reproduction method, the audio data still has to be encrypted and decrypted, which makes the burden heavier. For this reason, in an electronic device with a not-so-high performance processor, for example, in an electronic dictionary, it is impossible to take measures to reliably prevent the externally loaded audio data from being used fraudulently.

Audio data reproduction system, audio data reproduction method, and electronic device used in the system


Embodiments of systems, devices, and methods to minimize warping of ultrathin IC packaged products are generally described herein. In some embodiments, an apparatus includes an IC mounted on a package substrate, and a capacitive stiffener subassembly mounted on the package substrate. The capacitive stiffener subassembly includes a plurality of capacitive elements electrically connected to contacts of the IC.

There is continued demand to increase functionality of integrated circuits (ICs) and to provide these increasingly complex ICs in smaller packages. However, manufacturing of electronic systems that use these ICs can include exposing packaged ICs to environmental stresses. For example, manufacturing of electronic systems may involve multiple thermal cycles in assembling a packaged IC and in incorporating the packaged IC into an electronic system assembly. Adverse effects of environmental stresses can become dominant in manufacturing problems as the thickness of the package of the IC is reduced. These adverse effects can include a packaged IC becoming misshapen which can render the packaged IC unusable. Thus, there are general needs for systems and methods that provide packaged integrated circuits that are more robust to environmental effects.

Landside stiffening capacitors to enable ultrathin and other low-Z products


An adapter for installation between a single-offset transfer case and a transmission unit. The adapter includes an adapter input shaft coupled to an output shaft of the transmission, an adapter output shaft coupled to an input shaft of the transfer case, and a drive mechanism connecting the adapter input and output shafts. The adapter input shaft is rotatably driven by the transmission output shaft about a first rotary axis. The adapter output shaft is rotatably driven by the adapter input shaft about a second rotary axis. The input shaft and a first output shaft of the transfer case are commonly aligned for rotation with adapter output shaft for rotation about the second rotary axis. The transfer case has a second output shaft supported for rotation about a third rotary axis. Optionally, the adapter may include a torque disconnect clutch for disconnecting drive torque from the transmission to the transfer case for functions requiring torque interruption such as towing and for assisting in "on-the-fly" shifting between four-wheel high- and low-range drive modes.

The present invention relates to a power transfer system for a four-wheel drive motor vehicle and, in particular, to an adapter for converting a single offset transfer case into a one and one half offset transfer case assembly.
In view of the increased popularity of four-wheel drive vehicles, a plethora of power transfer systems are currently utilized for distributing tractive power (i.e., drive torque) to all four wheels of the motor vehicle. Conventionally, most four-wheel drive power transfer systems include a transfer case having an input shaft driven by the transmission output shaft, a rear output shaft driven by the input shaft and which is interconnected via a rear prop shaft to a rear axle assembly for driving the rear wheels, a front output shaft interconnected via a front prop shaft to a front axle assembly for driving the front wheels, and a torque transfer arrangement for continuously or selectively transferring drive torque from the rear output shaft to the front output shaft.
Currently, several different types of power transfer systems are being utilized in four-wheel drive vehicles. In "part-time" four-wheel drive systems, the transfer case is equipped with a mode shift mechanism which permits the vehicle operator to selectively couple the front output shaft to the rear output shaft for shifting the vehicle from a two-wheel drive mode into a four-wheel drive mode. An example of a part-time transfer case is shown and disclosed in commonly-owned U.S. Pat. No. 5,159,847 to Williams et al. Alternatively, "on-demand" power transfer systems are used to automatically transfer drive torque to the non-driven wheels when traction is lost at the driven wheels without any input or action required by the vehicle operator. For instance, a speed-sensitive torque transfer device can be installed in the transfer case for transferring drive torque from the rear output shaft to the front output shaft when an excessive speed differential occurs therebetween. Commonly-owned U.S. Pat. No. 5,358,454 to Bowen et al. disclosed a geared traction unit suitable for such an application. An example of an electronically-controlled on-demand power transfer system is disclosed in commonly-owned U.S. Pat. No. 5,363,938 to Wilson et al. Finally, in "full-time" four-wheel drive systems, the transfer case is equipped with an interaxle differential for continuously distributing the drive torque between the front and rear output shafts while permitting speed differentiation therebetween. Commonly-owned U.S. Pat. No. 4,677,873 to Eastman et al. discloses an exemplary full-time transfer case. Many full-time transfer cases are also equipped with a "slip limiting" device for selectively or automatically limiting or preventing excessive speed differentiation across the interaxle differential as a result of excessive wheel slip. Commonly-owned U.S. Pat. Nos. 5,078,660 and 5,106,351 to Williams et al. disclose exemplary full-time transfer cases equipped with a viscous coupling for limiting slip across the interaxle differential.
The above-noted types of transfer cases are commonly designed to have one or both output shafts offset from the input shaft. In the majority of transfer cases, the rotational axis of the front output shaft is offset from the common rotational axis shared by the input shaft and the rear output shaft. This arrangement is commonly known as a single-offset transfer case. For example, FIG. 1 illustrates an exemplary power transfer system 10 for a four-wheel drive vehicle. Power transfer system 10 includes a front driveline 12 and a rear driveline 14 both of which are drivable from a source of power, such as engine 16 and transmission 18. Transmission 18 includes an output shaft 20 supported for rotation about a rotary axis "O". A transfer case 22 is provided for transmitting drive torque from transmission output shaft 20 to front driveline 12 and rear driveline 14. Specifically, an input shaft 24 of transfer case 22 is coupled to transmission output shaft 20 for rotation about a rotary axis "I" which is commonly aligned with axis "O". Front driveline 12 includes a pair of front wheels 26 connected at opposite ends of a front axle assembly 28 which is coupled by a differential 30 to one end of a front prop shaft 32, the opposite end of which is coupled to a front output shaft 34 of transfer case 22. As seen, front output shaft 34 is supported in transfer case 22 for rotation about a rotary axis "F". Rear driveline 14 includes a pair of rear wheels 36 connected at opposite ends to a rear axle assembly 38 which is coupled by a differential 40 to one end of a rear prop shaft 42, the opposite end of which is coupled to a rear output shaft 44 of transfer case. Rear output shaft 44 is supported in transfer case 22 for rotation about a rotary axis "R" which is commonly aligned with rotary axis "I" of input shaft 24. Thus, transfer case 22 is of the single-offset type.
A smaller number of transfer cases have the front and rear output shafts commonly aligned for rotation about a rotary axis that is offset from the rotary axis of the input shaft. This arrangement is commonly known as a double-offset transfer case. While single and double offset transfer cases are used in the majority of conventional four-wheel drive arrangements, the need exists to provide alternatives for use in those vehicular applications in which such conventional transfer cases are not applicable. Unfortunately, the substantial cost and leadtime required to develop an alternative transfer case for such a special vehicular application is not typically justified.


Searches are automatically initiated to intelligently locate resources, particularly World Wide Web sites, within a distributed environment in response to a user specifying text via a user interface element. In a particular embodiment, a Web browser is enhanced to include a browser search capability. The browser includes a text box allowing the user to enter a URL. Depending on the particular browser used in the embodiment, this text box may be called, among other things, a destination field, location field, or URL field. When the user enters a valid URL, the corresponding web site is accessed. If the user enters text that is not a URL, the system may first try to construct a valid URL from the user-entered text. If a valid URL cannot be constructed, the browser then automatically formats a search engine query using the user-entered text and forwards the query to an Internet search engine. The browser chooses a particular search engine by determining the meaning or category of the user-entered text. The search engine locates web pages containing the query terms and either (1) returns a list of the search results or (2) redirects the user's browser to the most relevant web site discovered in the search. The browser may modify a returned web page to highlight search terms used in the query.

Distributed computing environments are becoming ever increasingly popular. Usage of the Internet has become especially popular. Typically, a user accesses the Internet from a client computer 10 (FIG. 1) that runs a web browser 14. The web browser includes software that enables a client computer to communicate with servers on the Internet. In most Internet transactions, a user sends a request 16 from the client computer 10 to a server computer 18 that is located on the Internet. The request 16 identifies a web site on the server 18 that the user wishes to access. In response to the request 16, the server 18 returns a copy of a web page 20. In most instances, the web page 20 is in the Hypertext Markup Language (HTML) and includes hyperlinks to other web sites. The web browser 14 includes software for rendering the web page 20 on the client computer 10 so that the user may view the web page.
The above described transaction is performed using the Hypertext Transfer Protocol (HTTP). In HTTP, the request from the client to the server includes the method to be applied to the resource that is requested, an identifier of the resource and the protocol version in use. Thus, for example, a typical request may request a "GET" of a web page that is identified by an identifier (e.g., a uniform resource locator (URL)). The protocol version in the request typically identifies which version of HTFP is being utilized. A URL is a compact string representation for a resource that is available on the Internet. In general, a URL is written as follows: [<scheme>:<scheme-specific-part>]. The <scheme> portion of the URL identifies which scheme is being utilized. Among the better known schemes are File Transfer Protocol (FTP), Hypertext Transfer Protocol (HTTP), the Gopher Protocol, Wide Area Information Servers (WAIS), USENET News Protocol (News) and the Prospero Directory Service (Prospero).
Perhaps the most popular format of a URL is a URL for the HTTP scheme. An HTTP URL takes the form of http://<host>:<port>/<path>?<searchpart>. The <host> portion may contain a fully qualified domain name of the network host. The <port> portion of the URL identifies a port number to connect to and defaults to 80 if omitted from the URL. The <path> portion of the URL is an HTTP selector. In general, an HTTP selector is a path name. The <searchpart> is a query string that is optional.
As mentioned above, web pages are typically encoded in HTML. HTML is a simple markup language that is used to create Hypertext documents that are platform independent. An HTML document is delimited into elements by tags that specify headings, paragraph lists, links, etc. Most HTML elements are identified in a document by a start tag that gives the element names and attributes, followed by a content, followed by an end tag. Start tags are delimited by "<" and ">". In contrast, end tags are delimited by "</" and ">". Typically, web browsers include code for translating and rendering HTML documents to a displayable format.
Microsoft Internet Explorer 2.0 is an example of a web browser. It enables a user to access a particular web page by typing the URL for the web page in an Address box. FIG. 2 shows an example of the window 22 for Internet Explorer 2.0 and the associated Address box. The web page contents associated with the URL and the Address box 24 are displayed within the client area 26 of the Internet Explorer window 22. The one difficulty with this mechanism is that users often cannot remember the URL for the web page they seek or enter the URL improperly in the Address box 24. As a result, the associated web page cannot be retrieved and displayed.

Intelligent automatic searching for resources in a distributed environment


A system for connecting and monitoring a magnetic operator interface assembly. The assembly can provide protection of an operator interface by limiting glare, UV damage, and exposure to rain. It can also protect the operator interface from high pressure cleaning equipment. The assembly is removably magnetically mountable to a sealed enclosure without breaching the enclosure's seal. The magnetic operator interface assembly can withstand operational forces, staying at a magnetically fixed position and without becoming accidentally detached. It is also easy to intentionally install and remove. The system may include sensors that can inform a local or remote dashboard about the status of the magnetic operator interface assembly, such as whether it is installed and whether the cover is open or closed. The system may also include a locking system to prevent tampering and limit access to the operator interface.

The present disclosure relates to a magnetic operator interface assembly for protecting an operator interface, which may be mounted without breaching the panel housing of the operator interface.
Operator interfaces can be subject to a variety of environmental conditions that can negatively impact the interface. Put another way, an interface can encounter certain conditions due to natural and human activity that can lead to malfunction, inefficiency, security risk, general aesthetic degradation, or other issues.
For example, an operator interface installed in a panel located outside may be subject to precipitation and other weather events. Particularly harsh weather, such as violent storms, extreme temperatures, and large temperature fluctuations, can be potentially damaging. However, even more common, milder, weather events, such as rain, snow, daily sunlight, and expected temperatures and humidity levels, can have a significant negative impact, especially after repeated or prolonged exposure. For example, ultraviolet ("UV") rays from sunlight that can damage operator interface aesthetics and functionality. Sunlight can also produce glare on the interface making it more difficult for the operator to see and use effectively and efficiently. Issues with sunlight can also exist for indoor interfaces installed in areas with natural light, and interface glare can also be created by other direct or indirect light sources, such as incandescent lights, fluorescent lights, light emitting diodes, or other light sources.
Operator interfaces may be used in various applications across numerous industries, and each application comes with its own challenges and issues related to integrity of the operator interface. For example, operator interfaces are used in industrial meat-processing facilities to allow an operator to monitor status, interact, or otherwise interface with various machines. Because of the nature of the environment of a meat-processing facility, and other types of industrial and commercial facilities, many of the machines are installed in sealed enclosures for ingress protection from solids and liquids, such as dust and water that could potentially be harmful. This helps to limit environment exposure to the internal content and vice versa, such as during cleaning. For example, it is common to clean meat-processing facilities with a power sprayer or other vigorous cleaning tools. While the enclosure aims to protect the inner workings of the machine, the operator interface is accessible and therefore exposed at the outer surface of the enclosure to the high pressure spray, which can cause damage both through exposure to liquid and the force of the spray itself. The high pressure spray may also activate the operator interface unintentionally.
Known assemblies may protect the operator interface from many of the issues described above. However, installation of these assemblies typically requires breaching the enclosure in order to install the assembly, for example by drilling holes for fasteners. These assemblies therefore require complex seals and tightening procedures to assure proper sealing. Some known assemblies incorporate their connection systems and seals within the operator interface. These breaching assemblies also typically void the warranty of the operator interface and void any certification with regard to the enclosure seal.
Every breach of the panel creates the potential for ingress or egress of unwanted solids or liquids. Accordingly, an undesired leak can form a failure point of the panel and therefore of the overall structure that contains the panel. Further, requiring a breach makes installation and uninstallation more difficult. For example, they likely require special tools to create the breach, ceasing or altering machine operation, and re-sealing the breach in order to resume normal operation.


When a low voltage event occurs in a utility grid, a load on a spindle system is repressed so that a damage is prevented. A rotor having a plurality of wind turbine blades, a generator to be driven by rotation of the rotor, and a pitch angle controller for controlling a pitch angle of the wind turbine blade according to a generator speed are provided, and when a voltage of a utility grid is a predetermined value or less, the pitch angle controller controls the pitch angle so that torsional vibration generated on a spindle system for transmitting the rotation of the rotor to a generator system is repressed.

Conventionally, it is known that when wind turbine blades of a wind turbine generator receive wind and a rotor having the wind turbine blades rotates, an eccentric load is applied to a spindle system that rotates via the rotor and thus torsional vibration occurs. Therefore, a method for repressing the torsional vibration is considered.
For example, Patent Document 1 proposes a technique for detecting a torsional vibration component of a shaft system between a generator and wind turbine blades based on a change in a rotational speed of the generator and adjusting an electric current according to the torsional vibration component so as to repress the torsional vibration.

Wind turbine generator, method of wind turbine generation, and program of the wind turbine generator


Systems and methods are provided for location tracking and filtering or hiding electronic communications. In one implementation, a method is provided for location tracking for electronic communications. The method includes receiving a location ID for a location from a user who desires to follow the location within a social networking environment, and associating the location ID with the user. The method also includes providing instructions to display a representation of the location in a list of the user's contacts.

As more people turn to electronic communications for their social and professional interaction with others, people are finding their electronic communications interfaces becoming duplicative and difficult to manage. As a result, universal electronic messaging systems have been developed that allow users to obtain updates from their friends and some of their favorite social networks and websites. Such systems allow users to, for example, publish their status and broadcast it to their friends, and view updates from their friends from one or more sources, such as social networks (e.g., Digg, Facebook, Flickr, Twitter, YouTube and AIM). A user's communications may be aggregated on a universal messaging system and across the Web, so that the user can obtain updates in one convenient place. Users may also use the universal system to update their friends on what the user is doing by issuing only one post, while setting a status on networks such as AIM, Facebook, and Twitter.
In some systems, users may have options for setting their status. They can simply find an input field at the top of a browser or mobile interface, and enter the text they would like to share. They can also update their status by typing a status message from a phone with SMS or text message capabilities. Users may also easily add photos from a listing of friends (such as a "Buddy List") just by clicking into the status box at the top of the list and selecting the photos to upload.
In some cases, it may be desirable to associate a user's location with a user's status update and/or photo. For example, if a user is using a mobile device to interact with a universal messaging system, the user may want other people to know where the user was when the status update and/or photo was created. The user may also want other users to know more about that location. As a result, universal systems have been provided with features through which a latitude and longitude, location name, and/or map can be associated with a status update and/or photo. While this may give other users more information about that particular message, it does not provide a sufficient way for users to follow and keep track of a particular location.
In addition, in view of the large quantity of incoming status updates and photos that a single user may receive from across one or more social networks and friends, it may be desirable to filter out some of those communications. Past efforts have only focused on filtering out particular types of communications or senders of communications. However, these prior techniques do not provide a sufficient way for users to perform targeted filtering or hiding of communications relating to locations that are not of interest, or specific words or phrases.
The disclosed embodiments of the present disclosure are directed to overcoming one or more of the problems set forth above. Among other things, the disclosed embodiments include systems and methods for location tracking, and filtering or hiding electronic communications.

Systems and methods for location tracking in a social network


According to one embodiment, a semiconductor memory device includes a plurality of first interconnects extending in a first direction, a plurality of second interconnects extending in a second direction, a plurality of stacked films respectively provided between the first interconnects and the second interconnects, each of the plurality of stacked films including a variable resistance film, a first inter-layer insulating film provided in a first region between the stacked films, and a second inter-layer insulating film provided in a second region having a wider width than the first region. The second inter-layer insulating film includes a plurality of protrusions configured to support one portion of the plurality of second interconnects on the second region. A protruding length of the protrusions is less than a stacking height of the stacked films.

A cross-point memory that includes lower layer interconnects, upper layer interconnects that three-dimensionally cross the lower layer interconnects, and memory cells provided between the upper layer interconnects and the lower layer interconnects at the intersections between the upper layer interconnects and the lower layer interconnects has been proposed.
Generally, after stacking a stacked film including the memory cell on the lower layer interconnect, the stacked film and the lower layer interconnect are patterned into line configurations. After filling an inter-layer insulating film into the trenches between the stacked films that are made by the patterning, the upper layer interconnect is formed on the stacked films and on the inter-layer insulating film. Then, the stacked films including the memory cells and have columnar configurations are formed at the intersections between the upper layer interconnects and the lower layer interconnects by patterning the upper layer interconnect into line configurations and by further patterning the stacked films under the spaces between the upper layer interconnects patterned into the line configurations.

Semiconductor memory device having crossing interconnects separated by stacked films


A hard disk drive with a disk that contains a target track and an adjacent track. The drive includes a circuit that determines an error in data read from the target track. Data from the adjacent track is stored in memory. The adjacent track is then erased and the target track data is re-read from the target track. Erasing the adjacent track allows the target track data to be read without adjacent track interference. The data from the adjacent track is typically rewritten onto the disk from memory so no data is lost.

1. Field of the Invention
The present invention relates to reading data in a hard disk drive.
2. Background Information
Hard disk drives contain a plurality of magnetic heads that are coupled to rotating disks. The heads write and read information by magnetizing and sensing the magnetic fields of the disk surfaces. Each head is attached to a flexure arm to create a subassembly commonly referred to as a head gimbal assembly ("HGA"). The HGA's are suspended from an actuator arm. The actuator arm has a voice coil motor that can move the heads across the surfaces of the disks.
Data is typically stored in sectors that are located within concentric radial tracks on the surfaces of the disks. Errors may occur when reading data. There have been developed various error recovery schemes to recover data read from disk. One source of error may be stray flux from an adjacent track. The stray flux causes noise that degrades the quality of the read signal and create errors in the data. This is commonly referred to as adjacent track interference ("ATI"). Unfortunately, conventional error recovery schemes do not always compensate for errors caused by ATI.

Data recovery through eliminating adjacent track interference


Embodiments of the present disclosure provide a method and apparatus for detecting an obstacle. The method may include: acquiring first point cloud data collected by a first vehicle-mounted laser radar and second point cloud data collected by a second vehicle-mounted laser radar, where a height of the first vehicle-mounted laser radar from a ground is greater than a height of the second vehicle-mounted laser radar from the ground, and a number of wiring harnesses of the first vehicle-mounted laser radar is greater than a number of wiring harnesses of the second vehicle-mounted laser radar; performing ground estimation based on the first point cloud data; filtering out a ground point in the second point cloud data according to the ground estimation result of the first point cloud data; and performing obstacle detection based on the second point cloud data after the ground point is filtered out.

In an autonomous driving scenario, a laser radar is usually used to perceive an obstacle on the road. A laser radar having a high number of wiring harnesses is usually mounted on a vehicle body for detecting the obstacle. The laser radar having the high number of wiring harnesses has a certain mounting height, and there is a certain angle between a laser wiring harness emitted from the laser radar and the ground. In this way, a detection blind zone is formed in an area close to the ground within a certain distance around the vehicle.

Method and apparatus for detecting obstacle

APOLLO INTELLIGENT DRIVING TECHNOLOGY (BEIJING) CO., LTD.


An objective of this invention is to provide a semiconductor device comprising a less bias-dependent capacitative element with a large capacity per a unit area, having a configuration which can be manufactured using an existing structure in a semiconductor device. There is provided a semiconductor device 100, comprising a semiconductor substrate; a lower interconnection 101 on the semiconductor substrate, in whose upper surface a concave is formed; dielectrics 102a, 102b, 102c, 102d covering the inner surface of the concave; and a upper interconnection 104 on the dielectrics 102a, 102b, 102c, 102d.

1. Field of the Invention
This invention relates to a semiconductor device and a manufacturing process therefor.
2. Description of the Related Art
There have been recently intense efforts for investigating a semiconductor device comprising a capacitative element for preventing circuit oscillation or noise in a semiconductor LSI.
There are several methods for forming such a capacitative element structure in an LSI. Generally, a gate oxide film in a transistor (Tr) is often used as a dielectric for a capacitative element without its dedicated structure. As an example of such a technique, FIG. 2 shows a semiconductor device comprising a capacitative element having a conventional and common configuration.
In this semiconductor device 200, a capacitative element is formed using a gate oxide film 210 as a dielectric and a well 208 and a gate electrode 211 formed in a silicon substrate 207 as electrodes for the capacitative element. The capacitative element is separated from other elements by SiO2 regions 209a, 209b and 209c. The capacitative element and other elements are interconnected via contact plugs 212a, 212b and interconnections 206a, 206b.
In this prior art, the semiconductor device 200 utilizes an existing common structure, so that increase of the number of manufacturing steps can be limited. Furthermore, a thin gate oxide film 210 is used as a dielectric, forming a capacitative element with a high capacity and a smaller area.
Alternatively, a structure dedicated to a capacitative element is sometimes used. As an exemple of such a technique, FIG. 3 shows a semiconductor device comprising a capacitative element having a conventional and common configuration.
In this semiconductor device 300, a capacitative element is formed by sequentially depositing a gate electrode 211 made of a metal material, a dielectric 213 (usually, a SiO2 or SiN film by CVD) and a an upper electrode for capacity 214 made of a metal material on an SiO2 region 209b formed on a silicon substrate 207. The capacitative element and other elements are interconnected via contact plugs 212a, 212b and interconnections 206a, 206b.
In this prior art, the electrodes in the capacitative element are the gate electrode 211 and the upper electrode for capacity 214, both of which are made of a metal material, so that a capacitative element with less bias dependency can be formed.
Alternatively, a capacitative element can be formed using an interlayer insulating film as a dielectric and a metal interconnection as an electrode. As an exemple of such a technique, FIGS. 4A and 4B show a semiconductor device comprising a capacitative element having a conventional and common configuration.
A semiconductor device 400 shown in FIG. 4A is an example where a lower interconnection 201, an upper interconnection 204 and an interlayer insulating film 205 are used as capacitative elements. A semiconductor device 500 shown in FIG. 4B is an example using interconnections 206a, 206b and an interlayer insulating film 205 in the same layer as capacitative elements.
Both semiconductor devices 400, 500 shown in FIGS. 4A and 4B utilize an existing metal interconnection structure as it is, resulting in limitation in increase of the number of manufacturing steps in this prior art.
Additionally, Japanese Patent Application NO. 1999-274428 describes a technique for a semiconductor device with a capacitative element. FIG. 19 shows a semiconductor device similar to that in the reference. The semiconductor device comprises a lower electrode 413 on a silicon substrate 401. There is formed a silicon oxide film 402 between the silicon substrate 401 and the lower electrode 413. The lower electrode 413 has a structure where a titanium silicide film 412 is deposited on a polysilicon film 411.
On the lower electrode 413, there is formed an upper electrode 415. A dielectric film 406 is formed between the lower electrode 413 and the upper electrode 415, to provide a capacitative element. The capacitative element is surrounded by a first interlayer insulating film 404. The capacitative element and other elements are interconnected via aluminum interconnections 408a, 408b and a buried plug 409.
Japanese Patent Application NO. 1999-274428 describes that this prior art can provide a convenient process for manufacturing a semiconductor device to realize an improved yield and a reduced cost.
Japanese Patent Application NO. 2003-347416 discloses another technique for a semiconductor device comprising a capacitative element. FIGS. 18A and 18B show a semiconductor device similar to that described in the reference.
FIG. 18B is a cross-sectional view of this semiconductor device, which corresponds to a cross-sectional view taken on line A-A′ of FIG. 18A described below. The semiconductor device comprises a first interlayer insulating film, on which are formed lower interconnection metals 31, 37, on which an upper interconnection metal 3105 is deposited. There is formed a second interlayer insulating film 311 between the lower interconnection metals 31, 37 and the upper interconnection metal 3105.
The second interlayer insulating film 311 comprises a plurality of Ti-containing barrier metal/tungsten films 3104 connecting the lower interconnection metal 37 to the upper interconnection metal 3105. The bottoms and the sides of the Ti-containing barrier metal/tungsten films 3104 are surrounded by an insulating film for a capacitative element 3102. A capacitative element unit 3100 is constituted by the interconnection metal 37 and a Ti-containing barrier metal/tungsten film 3104 as electrodes and the insulating film for a capacitative element 3102 as a dielectric film.
The lower interconnection metal 31 and the upper interconnection metal 3105 are interconnected via an interconnection-connecting contact 3103.
FIG. 18A shows a side and a plan views of the upper interconnection metal 3105 in this semiconductor device. The bottom of the upper interconnection metal 3105 comprises a plurality of capacitative elements 3200 consisting of a Ti-containing barrier metal/tungsten film 3104 and the insulating film for a capacitative element 3102 to constitute the capacitative element unit 3100.
Japanese Patent Application NO. 2003-347416 describes that according to this prior art, a plurality of capacitative elements can be appropriately selected to adjust a capacity of a capacitative element.
The above prior art leaves room for improvement as described below.
First, the semiconductor device shown in FIG. 2 utilizes the well 208 formed in the silicon substrate 207 as an electrode. Thus, an applied voltage may generate a depletion layer in the well 208 and variation of a thickness of the depletion layer causes capacity variation, i.e., bias dependency. A designer must, therefore, design a circuit, taking such bias dependency into account.
Furthermore, the well 208 formed in the silicon substrate 207 and the gate electrode 211 are used as electrodes for a capacitative element, so that the capacitative element occupies a large area on a chip. Thus, a transistor (Tr) may not be formed in the area which is occupied by the capacitative element, leading to a larger chip area.
Second, the semiconductor device shown in FIG. 3 has a structure dedicated to a capacitative element. It may lead to increase of the number of manufacturing steps and thus an increased product cost in comparison with a device without such a dedicated structure.
In the structure shown in FIG. 4, the interlayer insulating film between metal interconnections used as a dielectric film is thicker than that in the other prior arts described above. It results in a capacity per a unit area of the dielectric film is lower and a larger area is, therefore, needed for giving a required capacity. Thus, it may lead to an increased chip size and an increased product cost.
Since a structure dedicated to a capacitative element is formed in the structure shown in FIG. 19, the number of manufacturing steps and a product cost may be increased in comparison with a device without such a dedicated structure.
In this configuration, the dielectric film 406 formed in the bottom of the upper electrode 415 can function as a component in a capacitative element, while the dielectric film 406 formed in the side of the upper electrode 415 cannot fully function as a component in a capacitative element. Thus, it may result in an inadequate capacity per a unit area of the capacitative element.
Since the structure shown in FIG. 18 also has a structure dedicated to a capacitative element, the number of manufacturing steps and a product cost may be increased in comparison with a device without such a dedicated structure.
The insulating film capacitative element 3102 formed in the bottom of the Ti-component barrier metal/tungsten film 3104 can function as a component in a capacitative element, while the insulating film for a capacitative element 3102 formed in the side of the Ti-component barrier metal/tungsten film 3104 cannot fully function as a component in a capacitative element. Thus, it may result in an inadequate capacity per a unit area of the capacitative element.

Semiconductor device and manufacturing process therefor


Various implementations of the present disclosure relate to style transfer. In some implementations, a computer-implemented method comprises: obtaining a target object having a first style, a style of the target object being editable; obtaining a reference image including a reference object; obtaining a second style of the reference object, the second style of the reference object being extracted from the reference image; and applying the second style to the target object.

Editable objects like charts and tables have an important role in daily life. However, while using these editable objects, users often feel confused or difficult to decide what kind of design or style (e.g., color and layout etc.) should be used. In addition, even if users know the design or style to be used, they cannot quickly apply such style. Instead, users need to adjust the respective elements in the editable objects according to each style element and time cost of such operation is quite high.


A plasma etching apparatus of the present disclosure etches a substrate by plasma of a processing gas. The plasma etching apparatus includes a processing container; a holding unit configured to hold a substrate; and an electrode plate. The plasma etching apparatus further includes configured to supply the processing gas to a space between the holding unit and the electrode plate and disposed in n (n is a natural number of two or more) regions of the substrate divided concentrically in a radial direction, respectively. In addition, the plasma etching apparatus further includes a high frequency power source configured to supply a high frequency power to at least one of the holding unit and the electrode plate so as to generate plasma. The plasma etching apparatus controls a flow rate of the processing gas.

In a semiconductor device manufacturing process, as an apparatus for processing a substrate such as, for example, a semiconductor wafer (hereinafter, referred to as a "wafer"), there is a plasma etching apparatus in which etching is performed on the wafer by irradiating the wafer with plasma.
In plasma etching, a gas containing, for example, fluorine, chlorine, or oxygen is used as a processing gas to generate plasma. The plasma includes active species such as, for example, charged particles (hereinafter, referred to as "ions") and neutral particles (hereinafter, referred to as "radicals"). The surface of the wafer reacts with the plasma including ions and radicals to produce reaction products, and the produced reaction products are volatilized, so that etching is performed.
In the semiconductor device manufacturing process, wafers have recently been enlarged in diameter. With the enlargement in diameter of wafers, it is difficult to secure in-plane uniformity of a line width (critical dimension (CD)) and a depth of a hole or a bottom of a trench in a wafer plane during etching.
Meanwhile, there is also a technique for controlling a density distribution of radicals in a central region and a peripheral region in a wafer plane by adjusting an amount of a processing gas supplied from an upper electrode.

Plasma etching apparatus and plasma etching method


Systems and methods for blending dissimilar, ordered populations into a single selection for users are disclosed herein. In an aspect, content items belonging to distinct parent populations which display a large disparity in the value which is used for ranking purposes, can be displayed together in a single continuously ranked list for simple browsing and selection by users. Further, a score can be assigned to the respective media content items based at least in part on a median value of a distribution of media content items corresponding to the respective parent populations and this score can be used as a normalized, universal value with which to rank content from all dissimilar populations together.

Consumers of media content often select content from an ordered list of search results generated from a search engine query or algorithmically generated browse-able lists. Content options are often ranked in an order according to relevancy and/or popularity of an item queried. For instance, a user may desire to download a weather app, whereby the list of "top weather apps" is ranked by popularity to viewers based on commonly employed popularity factors (e.g. greatest aggregate number of clicks, number of downloads, number of views, etc.). A list generated from a popularity factor such as greatest number of downloads typically generates a list of apps that users can view for free. However, free content results may be unrepresentative of the breadth and quality of total available content. In particular, paid-for content is often drowned out in results that are a function of greatest number of views, but still may be considered preferable for user consumption due to premium features offered with the paid-for content. Results biased toward media items belonging to a single population group (e.g. such as most viewed media items) limit a user's choice of consumable media items to a relatively homogenous set of media item options that may not properly represent content that may be desirable to respective users.

This patent is subject to a terminal disclaimer.

Blended ranking of dissimilar populations using an N-furcated normalization technique


In this elevator system, a traveling body has arranged upon it a safety gear for braking and holding the traveling body tight on the guiderail, or on a braking rail. The safety gear is connected to a device for actuating the safety gear, which can also actuate the safety gear. The device for actuating the safety gear contains a coupler body, which can be pressed against the elevator hoistway, possibly against the guiderail or braking rail, wherein actuation of the safety gear is effected by a relative movement between the pressed-on coupler body and the safety gear. For this purpose, the coupler body can contain a curved coupler surface, which, in case of need, is brought into engagement with the elevator hoistway, or with the guiderail or braking rail.

Elevator systems are built into buildings. They comprise an elevator car which, via suspension means such as suspension ropes or suspension belts, is connected to a counterweight or to a second elevator car. By means of a drive, which can be chosen to act on the suspension means, or directly on the car or counterweight, the car is moved along essentially vertical guiderails. The elevator system is used to transport persons and goods between one or more stories in the building.
The elevator system contains apparatus to secure the elevator car in case of failure of the drive or of the suspension means, or to prevent undesired drifting away or falling when stopping at a floor. For this purpose, safety gears are generally used which, in case of need, can brake the elevator car on the guiderails.
Historically, such safety gears were actuated by mechanical speed governors. Today, however, electronic monitoring devices are also used, which, in case of need, can activate braking apparatus or safety gears.
So as to be able nonetheless to rely on known safety gears, electromechanical actuating units are often required which, when correspondingly triggered, can actuate safety gears.
From EP0543154 such a device is known. By its means, in case of need, an auxiliary caliper brake is brought into engagement with a guiderail, and this auxiliary caliper brake actuates an existing lever system, by means of which safety gears are actuated. This auxiliary caliper brake is designed to be able to move the lever system and mass components of the safety gear, or to actuate the safety gear. The electromagnetic units are dimensioned correspondingly large.
From WO 2008/057116 a similar device is known. By this means, in case of need, a coupler body that is arranged in a safety gear is pressed against a guiderail, whereby the safety gear is actuated.
From U.S. Pat. No. 7,575,099 a further such device is known. In this solution, in case of need, engagement wedges of a safety gear are actuated directly by springs. The springs are pretensioned by an electromagnet and, in case of need, the pretensioned springs are released. The springs can be reset or retensioned again by means of a spindle drive. This electromagnet is dimensioned correspondingly large, since the entire pretension force of a plurality of springs should be absorbed directly and held.


A comparator circuit includes a current mirror circuit, a differential pair, and a first current source between first and second power supply lines. The differential pair includes a first MOS transistor of enhancement mode n-type having a gate electrode at which an input signal is supplied, and a second MOS transistor of depletion mode n-type. A source of the second MOS transistor is connected with a source of the first MOS transistor and a threshold voltage of the second MOS transistor is lower than that of the first MOS transistor. A gate electrode of the first MOS transistor is formed by polycrystalline silicon which contains a p-type impurity. A gate electrode of the second MOS transistor is formed by polycrystalline silicon which contains an n-type impurity and is connected with the first power supply line. An output signal is output based on a drain voltage of the second MOS transistor.

The present invention relates to a comparator circuit and a power supply circuit using the comparator circuit.
An electronic instrument such as a portable telephone which includes a liquid crystal display (LCD) panel operates using a removable battery as the power supply, for example. If an electric charge remains in a boosting capacitor when the battery is removed, an abnormal display may occur momentarily (display occurs momentarily; momentary operation). Therefore, a display-off operation of controlling the voltage applied to the liquid crystal according to a predetermined sequence is performed when removing the power supply from the electronic instrument.
The display-off operation must be performed when the user or the like suddenly removes the battery when the electronic instrument operates normally in the power-on state. In this case, the electronic instrument monitors the power supply voltage level, and performs the display-off operation when triggered by the monitoring result of the power supply voltage level when the electronic instrument judges that the battery has been removed.
The accuracy of the threshold value for judging that the battery has been removed is important when monitoring the power supply voltage level. If the threshold value is high and is close to the power supply voltage during power-on, the display-off operation starts due to noise or the like. If the threshold value is too low, the timing of judging that the battery has been removed is delayed, whereby the display-off operation cannot be completed.
As described above, when monitoring the power supply voltage level, it is preferable that the accuracy of the threshold value for judging that the battery has been removed be high.

Comparator circuit and power supply circuit


An optical scanning system may include a moving sample positioning stage that supports the sample during an optical measurement of the sample using the light source and the spectrometer. The moving sample positioning stage may move the sample in at least one direction during the optical measurement of the sample. A scatterometer system may include collection imaging optics for imaging the reflected light onto a multi-pixel sensor that collects and analyze the reflected light.

1. Field of the Invention
The present invention relates to surface scanning systems. More particularly, the invention relates to systems and methods of semiconductor surface scanning using scatterometers.
2. Description of Related Art
Current ellipsometers and reflectometers predominantly use point-to-point stages and so called move-acquire-measure (MAM) process to perform metrology on semiconductor wafers or other scanned surfaces. The "move" portion involves point-to-point motion of a wafer carrying stage, and includes acceleration of the stage, followed by deceleration. Because of practical mechanical limitations imposed on acceleration rate, the typical time to move from point to point cannot be less then a few tens of milliseconds. Once the wafer (sample) is positioned for the optical system to start the next acquisition, the "acquire" portion of the process commences in which the optical system acquires sample data. In the case of polarized measurements, that typically takes at least multiple milliseconds, more if higher sensitivity is desired, and even more if the system has moving parts such as a rotating polarizer and/or an analyzer. The "measure" portion involves data analysis and may commence concurrently with the start of a subsequent MAM cycle. Overall, practical limitations and sensitivity requirements may limit MAM times to hundreds of milliseconds. For example, assuming 200 ms MAM and 300 measurements per wafer sample plan, a single wafer will require 60 seconds to process, which equates to 60 wafers per hour (wph) throughput. Therefore, the practical limit on the number of samples per wafer may be estimated to not exceed ˜1000 measurements to allow better than 20 wph throughput.
An advantage of the point-to-point method is the ability to measure within a specified box, which may have dimensions on the order of 10 μm or less. Ellipsometers and reflectometers also have the unique ability to perform non-destructive measurements of film thicknesses, dispersion coefficients (n and k), and critical dimensions of gratings (OCD). While such point-to-point systems provide better sensitivity and the ability to measure specific locations, such systems are also inherently limited by the Move-Acquire-Measure (MAM) time per single measurement. Typical measurement sample plans may not exceed a few tens of locations per wafer to stay within reasonable wafers-per-hour (WPH) throughput range. The limitation in measurement locations (scanning area on the sample) arises because of limited acceleration and speed of a sample moving system (the overhead between sample measurements) in combination with the time to make the actual measurement on the sample (e.g., time for point-to-point data acquisition). Thus, it may be beneficial for a semiconductor manufacturer to have a complete map of a wafer without sacrificing throughput.
Alternatives to the point-to-point systems are systems that record all necessary signals simultaneously with the quality of the signal limited by exposure time. U.S. Pat. No. 7,121,357 to Meeks, which is incorporated by reference as if fully set forth herein, discloses an example of such a system. Such systems would predominantly make measurements in a given location on a wafer with the wafer shift (during measurement) similar or less than the optical spot size. The wafer shift being similar or less than the optical spot size, however, limits the mapping size on the wafer for data acquisition. In addition, simultaneously recording all the signals may put severe restrictions on available engineering solutions. For example, rotating polarizer/analyzer/compensator ellipsometers (RPE/RAE/RCE) and their combinations may be excluded from being used in a system that records all necessary signals simultaneously because they are non-simultaneous measurement systems. RPE/RAE/RCE ellipsometers, however, provide best-in-class sensitivity. Future demands for higher sensitivity may require the use of additional Mueller matrix elements, which would further increase the desire for using non-simultaneous measurement systems while providing higher scanning system throughput.
It may also be desired for a scanning system to provide capability to collect specular reflection order information from a sample via multiple channels. Collecting specular reflection order information via multiple channels may provide improved sensitivity, improved throughput, and possibly provide the ability to resolve small features on the wafer. In addition, small surface defects, such as scratches, may be detectable.
U.S. Pat. Appl. Pub. No. 2008/0014748 to Perry, which is incorporated by reference as if fully set forth herein, describes a multichannel reflectance analyzing system that relies on a bundle of fibers. A problem in the disclosed multichannel reflectance analyzing system is that it relies on a bundle of intermixed illumination and collection fibers. It may be implemented in two ways. A first way of implementation is imaging the sample surface on the fiber entrance. Since collection fibers constitute only a portion of the bundle, however, the system will only provide a subset of surface information and would not be suitable for detection of surface defects. That behavior may be suitable for the applications described in the application but would not be acceptable for a wafer inspection system. A second way of implementation is defocusing the system. When the system is defocused, however, the optical throughput suffers and the system may not provide desired surface resolution (e.g., the system may not be sensitive to surface defects).

Optical surface scanning systems and methods


Methods and apparatus for producing a semiconductor. A production reticle having a pattern that includes circuit features, phase shift target structures and overlay target structures is provided. The pattern is transferred multiple times across a test wafer surface for various focus levels to form a focus matrix. The pattern shift of the phase shift target structures is measured using an overlay metrology tool. The phase difference is calculated for each phase shift target structure, based on the pattern shift and the phase shift target structure focus level to qualify the phase difference of the production reticle. The pattern is transferred onto a production wafer when the phase difference meets desired limits. The pattern shift of the overlay target structures transferred to the production wafer is measured using an overlay metrology tool. The pattern placement error of the overlay target structures is calculated and the pattern placement error is qualified.

The present invention relates generally to photolithography methods and systems, and more specifically to improved techniques for determining phase errors associated with phase shift masks.
Integrated circuits are made by lithographic processes, which use lithographic masks and an associated light or radiation source to project a circuit image onto a wafer. As should be appreciated, the kind of lithography generally depends on the wavelength of the radiation used to expose the resist (e.g., UV radiation, x ray radiation, e beam, ion beam and the like). Referring to FIG. 1, a simplified diagram of a lithography system 2 is shown. By way of example, the lithography system may correspond to a stepper or scanning system. The lithography system 2 typically includes a light or radiation source 3 and a first set of optics 4 that illuminate a reticle or mask 5 having a circuit pattern 6 disposed thereon. The lithography system 2 also includes a second set of optics 7 that pick up the transmitted light or radiation and focuses (or images) it onto a surface 9 of a semiconductor wafer 8 thus writing the pattern of the mask 5 onto the surface 9 of the semiconductor wafer 8. In most cases, the semiconductor wafer 8 includes a layer of photoresist that when exposed to the patterned light or radiation forms the pattern of the mask onto the wafer. The reticles or masks come in various forms. However, they typically include opaque portions (e.g., chrome lines) and/or transmissive portions (e.g., quartz). The opaque portions block the light from passing through the mask 5 while the transmissive portions allow the light to pass therethrough.
Alternating Phase Shift Masks (AltPSM), which include opaque portions separated by alternating phase shifted transmissive portions, have become an important and enabling technology currently reaching maturity within the lithography environment. This technology, although initially proposed simultaneously in Japan and the United States as long as 20 years ago, is starting to become a mainstream technique for achieving smaller k1 values in the lithography of critical process layers, specifically the poly to gate layer. Alternating Phase Shift Masks are used at this process layer in particular since the requirement for the smallest possible pitch is crucial in terms of packing density. Alternating Phase Shift Masks achieve a reduction in minimum pitch by disposing phase shifted transmissive portions, in which the optical phase alternates by 180 degrees, in between the opaque portions. In most cases, the AltPSM includes chrome lines (opaque portion), which are separated by different phase shifted portions of a quartz substrate (transmissive portions). The different phase shifted portions are typically formed by etching the quartz substrate. The different phase shifted portions may also be altered by the addition of an attenuating phase shifter (e.g., attenuated phase shift reticles).
FIG. 2 shows an alternating phase shift pattern 10 of a phase shift mask 12, an amplitude profile 14 of the light passing through the alternating phase shift pattern 10, and a resulting pattern 16 formed on a wafer 18. As shown, the phase shift mask 12 includes a substrate 22 formed from quartz, a plurality of chrome lines 24 and alternating phase shift zones 26 and 28 disposed between the chrome lines 24. The phase shift zones 26 correspond to the exposed surface of the quartz substrate 22 and the second phase shift zones 28 correspond to portions of the quartz substrate 22 that have been etched. The phases of the phase shift zones 26 and 28 are opposite one another (e.g., 180 degrees). As should be appreciated, as light traverses the quartz substrate 22, there is a phase shift that is induced in the light that traverses the etched quartz compared to the light that traverses the unetched quartz. The opposite phase creates a situation where the light intensity has to go through zero. These zero points correspond to where the light destructively interferes thus forming a dark line between the two phase shifted areas 26 and 28. The dark lines do not expose the photoresist 30 disposed on the wafer 18 and thus a resulting pattern 16 is formed on the wafer 18.
Unfortunately, however, this method introduces a number of new challenges. One of the challenges is achieving consistent and accurate phase differences between adjacent transmissive portions in the Alternating Phase Shift Masks. This is critical since phase errors associated with phase difference can introduce additional pattern placement errors of the lines and spaces in the subsequent lithography process thereby making overlay control difficult. As should be appreciated, overlay generally refers to the determination of how accurately a first circuit pattern aligns with respect to a second circuit pattern. Overlay errors are generally determined by measuring the relative shift between first and second overlay targets with overlay metrology tools. This new kind of pattern placement error cannot be measured using standard overlay metrology targets. Phase errors, however, can be characterized by detailed measurements of the Alternating Phase Shift Masks themselves on a dedicated Alternating Phase Shift Masks inspection tool. Typically such Alternating Phase Shift Masks inspection tools are available only at the point of reticle manufacture. That is, they are not located within the production environment. By way of example, one such phase shift inspection tool is manufactured by Lasertec of Japan.
In view of the foregoing, there is a desire for improved techniques for determining phase error associated with phase shift masks, and further improved techniques for determining phase error associated with phase shift masks at a point during wafer processing.

Measuring phase errors on phase shift masks


The present invention provides an optical surface which is able to mix different wavelengths into a light pattern which contains all wavelengths evenly distributed across the pattern. The novel optical surface extends in at least two Cartesian base dimensions (X, Y), whereby a cross-section of the surface taken in either of said two Cartesian base dimensions (X, Y) features a first plurality of protuberances which extend to the same direction in a third Cartesian dimension (Z). The cross-section of the optical surface also features a second plurality of protuberances which extend to the opposite direction as the first plurality of protuberances in the third Cartesian dimension (Z). The pluralities of protuberances form converging and diverging optical shapes for mixing different wavelengths scattering from the optical surface.

Light emitting diodes, i.e. LED's, have become an increasingly popular source of light for illuminators. The recent developments in LED technology have radically improved the output of the diodes, whereby new application areas have emerged. Indeed, the use of LED's has expanded from the traditional indication purposes to more demanding indoor and outdoor lighting apparatuses.
The improved light output has revealed problems newly associated with LED's. One particular issue is the color distribution in the produced light patter. Color distribution was never considered an issue with traditional LED's because they had relatively low light output. With modern LED's with high light output, however, the distribution of color is a concern as LED's are used to illuminate large areas in indoor lighting, for example. The issue is emphasized when using separate LED's for particular wavelength bandwidths. In indoor lighting applications, for example, it is common to use one LED for each primary color, i.e. three LED's for red, green and blue, respectively. In such a multi-source illuminator it is common that the colors are clearly distinguishable in the light pattern produced, which is not desirable when pursuing light with uniform color.
For managing the color distribution, various solutions have been proposed. An established solution for managing the color distribution of illuminators with an LED light source is to use a plurality special lenses, the incident surfaces of which have been treated such to mix different wavelengths produced by the LED into a light pattern which contains all wavelengths evenly distributed across the pattern.
Another solution is proposed by US 2011/0018016 A1 which discloses an optical surface for producing a desired color pattern. The optical surface according to US 2011/0018016 A1 features a plurality of bulges which extend from an otherwise planar emission surface of a lens. The bulges are used to converge light beams refracting from the emission surface of the lens for controlling the color pattern produced.
The optical surface as proposed by US 2011/0018016 A1 is mainly suitable for controlling the angular color distribution pattern, which does not address the issue of mixing different wavelengths produced by the LED into a light pattern which contains all wavelengths evenly distributed across the pattern.
It is therefore an aim of the present invention to provide an optical surface which when used as an emission surface or as a portion thereof—is able to mix different wavelengths produced into a light pattern which contains all wavelengths evenly distributed across the pattern.


A carbon adsorbent storage and dispensing system is provided with a structurally modified particulate carbon adsorbent designed with optimal volumetric surface area for a certain range of particle sizes. Bulk density and specific surface area are carefully balanced to ensure the volumetric surface area remains within an optimal range to create high performance, as measured by dispensing capacity of the dopant fluid that is reversibly adsorbed onto the structurally modified particulate carbon adsorbent.

There has been a need for a reliable source of dopant fluid(s) for a wide variety of industrial applications. Many industrial processing and manufacturing applications require the use of highly toxic dopant gases. The manufacture of semiconductor materials represents one such application wherein the safe storage and handling of highly toxic hydride or halide gases and mixtures thereof becomes necessary. Examples of such gases include silane, germane, ammonia, phosphine, arsine, boron trifluoride, stibine, hydrogen sulfide, hydrogen selenide, hydrogen telluride, phosphorous trifluoride, arsenic pentafluoride and other halide or hydride compounds and gas mixtures thereof. As a result of toxicity and safety considerations, these gases must be carefully stored and handled in the industrial process facility.
The semiconductor industry in particular relies on various gaseous sources, such as, for example, arsine and phosphine, hydrogen selenide, boron trifluoride, diborane, silicon tetrafluoride, germanium tetrafluoride, selenium hexafluoride, carbon monoxide and carbon dioxide as sources of arsenic, phosphorus, boron, silicon, germanium, selenium and carbon in ion implantation. Ion implantation systems typically require the usage of pure gases such as arsine and phosphine stored as liquefied compressed gases at their respective vapor pressures and pure gases such as boron trifluoride and silicon tetrafluoride stored at pressures as high as 1500 psig within the delivery vessel. Due to their extreme toxicity and high vapor pressure, their use, transportation and storage raise significant safety concerns for the semiconductor industry.
To address the various safety concerns, there have been a number of systems developed to deliver these hydride and halide compounds to the ion implant tool at sub-atmospheric conditions. Device safety requires delivery of the gas at sub-atmospheric pressures so that if the valve opens to atmosphere, no gas will leak out of the cylinder. A vacuum condition must be applied to the cylinder to obtain flow of gas. As such, a fail-safe vacuum-actuated valve design is required. A number of mechanical systems have been developed for the sub-atmospheric delivery of dopant gases. Some involve the use of a pressure regulator, while others require valve devices to control and deliver the product sub-atmospherically. These valve devices are set to deliver or open when sub-atmospheric or vacuum conditions are applied to the delivery port of the cylinder. The exact location of these devices can be in the port body, in the neck cavity, or inside the cylinder itself. In each case, the pressure regulator or valve device is located upstream of the cylinder valve seat with respect to flow of gas from the interior of the cylinder to the delivery port. A primary drawback of the mechanical systems is that many of the toxic gases are stored at high pressures (e.g., 500 psi or greater) within the cylinder. For example, the mechanical systems can fail, such as by way of a leak, thereby defeating the safety design objective of the mechanical systems. The potential for a leak or other type of failure for certain mechanical systems is low, but, nonetheless, some end-users are unwilling to accept any risk when handling highly toxic gases. Additionally, certain regulatory authorities do not permit the usage of high pressure storage systems in a semiconductor fabrication environment.
To eliminate higher pressure storage, an alternative approach involves deploying a solid adsorbent loaded within a cylinder as part of an adsorbent storage and dispensing system. Several commercial adsorbent storage and dispensing systems exist today. However, many of these systems fail to exhibit satisfactory performance. For example, many of the adsorbent-based systems do not exhibit a sufficient deliverable capacity of the gases between storage and release operating conditions. Others fail to exhibit sufficient loading capacity of the particular gas to be used. Yet, other adsorbent-based systems do not possess a sufficient loading capacity and a sufficient deliverable capacity.
In view of these drawbacks, there is an unmet need for higher performance carbon adsorbent-based systems that operate in a safe and reliable manner.

Dopant fluid storage and dispensing systems utilizing high performance, structurally modified particulate carbon adsorbents