The invention provides a semiconductor storage device which is comparatively short in read time. A read route is formed from a first read bus pair connected to a plurality of sense amplifiers, to which a bit line pair is inputted, and inputted to a first data amplifier, a second read bus pair connected to the first data amplifier connected to the sense amplifiers, to which the bit line pair is inputted, and also to a precharge circuit and inputted to a second data amplifier, a third read bus outputted from the second data amplifier and inputted to a data output buffer, and a bus extending from the data output buffer to an output terminal. The precharge circuit is connected to the second read buses in the proximity of the first data amplifier connected to the second read buses at a position remote from the connection points between the second data amplifier and the second read buses.

1. Field of the Invention
This invention relates to a semiconductor storage device, and more particularly to a control circuit for a read bus of a semiconductor storage device.
2. Description of the Related Art
In recent years, as the capacity of a semiconductor storage device increases, the chip size is inclined to increase. Consequently, the wiring for a read bus is so increasing that such problems as a delay in data transmission time and an increase in charge/discharge current of a wiring become significant.
Therefore, transmission of read data is frequently performed with a very small potential difference between two buss to achieve a high speed operation and reduction in current consumption.
FIG. 5 shows an example of a circuit construction of a semiconductor storage apparatus of the type described above.
Referring to FIG. 5, a read route is formed from a plurality of first read bus pairs RBUS1T and RBUS1N connected to a plurality of sense amplifiers 10, to which a bit line pair DT and DN is inputted, and inputted to a plurality of first data amplifiers 20, a second read bus pair RBUS2T and RBUS2N connected to the first data amplifiers 20 and also to a precharge circuit 30 and inputted to a second data amplifier 40, a third read bus pair RBUS3T and RBUS3N outputted from the second data amplifier and inputted to a data output buffer 50, and a still further bus from the data output buffer 50 to an output terminal DOUT.
Each of the sense amplifiers 10 is formed from a Please add the following claims: P-channel transistor T1 having a gate to which the bit line DT is inputted and connected between a power supply and the bit line DN, another P-channel transistor T2 having a gate to which the bit line DN is inputted and connected between the power supply and the bit line DT, an N-channel transistor T3 having a gate to which a plate selection signal PL is inputted and connected between the bit line DT and a nodal point ST, another N-channel transistor T4 having a gate to which the plate selection signal PL is inputted and connected between the bit line DN and another nodal point SN, a further N-channel transistor T5 having a gate to which the nodal point ST is inputted and connected to the ground GND and the nodal point SN, a still further N-channel transistor T6 having a gate to which the nodal point SN is inputted and connected between the ground GND and the nodal point ST, a pair of yet further N-channel transistors T7 and T8 connected in series between the first read bus RBUS1T and the ground GND, the N-channel transistor T7 having a gate to which a column selection line YSW is inputted, the N-channel transistor T8 having a gate to which the nodal point SN is inputted, and a pair of yet further N-channel transistors T9 and T10 connected in series between the first read bus RBUS1N and the ground GND, the N-channel transistor T9 having a gate to which the column selection line YSW is inputted, the N-channel transistor T10 having a gate to which the nodal point ST is inputted.
Each of the first data amplifiers 20 is formed from a P-channel transistor T11 having a gate to which a first data amplification activation signal DE1B is inputted and connected between the power supply and a nodal point A, another P-channel transistor T12 having a gate to which the first read bus RBUS1T is inputted and interposed between the nodal point A and the first read bus RBUS1N, a further P-channel transistor T13 having a gate to which the first read bus RBUS1N is inputted and interposed between the nodal point A and the first read bus RBUS1T, a pair of N-channel transistors T14 and T15 interposed in series between the second read bus RBUS2T and the ground GND, the N-channel transistor T14 having a gate to which a first read switch RSW1 is inputted, the N-channel transistor T15 having a gate to which the first read bus RBUS1N is inputted, a pair of further N-channel transistors T16 and T17 interposed in series between the second read bus RBUS2N and the ground GND, the N-channel transistor T16 having a gate to which the first read switch RSW1 is inputted, the N-channel transistor T17 having a gate to which the first read bus RBUS1T is inputted, a still further N-channel transistor T18 having a gate to which a first precharge signal PRE1 is inputted and connected between the first read bus RBUS1T and the power supply, and a yet further N-channel transistor T19 having a gate to which the first precharge signal PRE1 is inputted and connected between the first read bus RBUS1N and the power supply.
The precharge circuit 30 is formed from a P-channel transistor T20 having a gate to which a second precharge signal PRE2B is inputted and connected between the second read bus RBUS2T and the power supply, and another P-channel transistor T21 having a gate to which the second precharge signal PRE2B is inputted and connected between the second read bus RBUS2N and the power supply.
Further, the second data amplifier 40 is formed from an N-channel transistor T22 having a gate to which a second read switch RSW2 is inputted and connected between the second read bus RBUS2T and the third read bus RBUS3T, another N-channel transistor T23 having a gate to which the second read switch RSW2 is inputted and connected between the second read bus RBUS2N and the third read bus RBUS3N, a P-channel transistor T24 having a gate to which the third read bus RBUS3T is inputted and connected between the power supply and the third read bus RBUS3N, another P-channel transistor T25 having a gate to which the third read bus RBUS3N is inputted and connected between the power supply and the third read bus RBUS3T, a further N-channel transistor T26 having a gate to which the third read bus RBUS3T is inputted and connected between the third read bus RBUS3N and a nodal point B, a still further N-channel transistor T27 having a gate to which the third read bus RBUS3N is inputted and connected between the third read bus RBUS3T and the nodal point B, and a yet further N-channel transistor T28 having a gate to which a second data amplification activation signal DE2 is inputted and connected between the nodal point B and the ground GND.
It is to be noted that the transistors T1 and T2, the transistors T3 and T4, the transistors T5 and T6, the transistors T7 and T9, the transistors T8 and T10, the transistors T12 and T13, the transistors T14 and T16, the transistors T15 and T17, the transistors T18 and T19, the transistors T20 and T21, the transistors T22 and T23, the transistors T24 and T25, and the transistors T26 and T27 are transistors which individually exhibit same characteristics if an equal gate potential is applied.
Subsequently, operation of the semiconductor storage apparatus shown in FIG. 5 will be described. FIGS. 6(a) and 6(b) are waveform diagrams illustrating operation of the semiconductor storage apparatus shown in FIG. 5.
If a word line (not shown in FIG. 5) is selected and data of a memory cell (not shown in FIG. 5) appears on the bit line pair DT and DN, then if the plate selection signal PL is High, then the transistors T3 and T4 are conducting and the data is transmitted also to the nodal points ST and SN.
Thereafter, as seen also in FIGS. 6(a) and 6(b), if the column selection line YSW becomes High and the first data amplification activation signal DE1B becomes Low when the first precharge signal PRE1 is Low and the first read bus pair RBUS1T and RBUS1N is in a condition precharged to a potential lower by a threshold value of the transistors T18 and T19 than the power supply level, then a current route from the power supply to the ground GND via the transistors T11, T12, T9 and T10 and another current route from the power supply to the ground GND via the transistors T11, T13, T7 and T8 are produced.
In this instance, since the potentials at the nodal points ST and SN are different from each other, a difference is produced between the on-resistances (resistance values between the drain and the source) of the transistors T8 and T10, and a potential difference is produced also between the potentials of the first read buses RBUS1T and RBUS1N. Further, this potential difference is amplified by the first data amplifiers 20 and gradually becomes large.
FIGS. 6(a) and 6(b) illustrate a case of data when the DT, ST and RBUS1T sides become High and the DN, SN, RBUS1N sides become Low.
Then, if the first read switch RSW1 becomes High, then since the second precharge signal PRE2B is Low, a current route from the power supply to the ground GND via the transistors T20, T14 and T15 and another current route from the power supply to the ground GND via the transistors T21, T16 and T17 are produced. In this instance, since the potentials of the first read buses RBUS1T and RBUS1N are different from each other, a difference is produced between the on-resistances of the transistors T15 and T17, and a potential difference is produced also between the second read buses RBUS2T and RBUS2N.
Further, if the second read switch RSW2 becomes High , the n the potentials at the second read buses RBUS2T and RBUS2N are transmitted to the third read buses RBUS3T and RBUS3N via the transistors T22 and T23, respectively.
After the potentials are transmitted sufficiently to the third read buses RBUS3T and RBUS3N, if the second read switch RSW2 is changed to Low and the second data amplification activation signal DE2 is changed to High, then the potentials of the third read buses RBUS3T and RBUS3N are amplified to the power supply potential VCC and the potential ground GND, respectively, by the second data amplifier 40.
The data of the memory cell transmitted to the third read bus pair RBUS3T and RBUS3N as described above is outputted to the output terminal DOUT via the data output buffer 50.
FIG. 7 shows a relationship in arrangement of, from among the first data amplifiers 20 connected to the second read buses RBUS2T and RBUS2N in pair, the first data amplifier 20A connected to the second read buses RBUS2T and RBUS2N at a position proximate to connection points between the second data amplifier 40 and the second read buses RBUS2T and RBUS2N and the first data amplifier 20B connected to the second read buses RBUS2T and RBUS2N at a position remote from the connection points between the second data amplifier 40 and the second read buses RBUS2T and RBUS2N.
Referring to FIG. 7, the first data amplifier 20A receives a first data amplification activation signal DE1B(a), a first precharge signal PRE1(a), a first read switch RSW1(a) and a first read bus pair RBUS1T(a) and RBUS1N(a) as inputs thereto, and the sense amplifier 10A to which the first read bus pair RBUS1T(a) and RBUS1N(a) is connected receives a plate selection signal PL(a) and a bit line pair DT(a) and DN(a) as inputs thereto.
The first data amplifier 20B receives a first data amplification activation signal DE1B(b), a first precharge signal PRE1(b), a first read switch RSW1(b) and a first read bus pair RBUS1T(b) and RBUS1N(b) as inputs thereto, and the sense amplifier 10B to which the first read bus pair RBUS1T(b) and RBUS1N(b) is connected receives a plate selection signal PL(b) and a bit line pair DT(b) and DN(b) as inputs thereto.
It is to be noted that a precharge circuit 30, a second data amplifier 40 and a data output buffer 50 have constructions similar to those shown in FIG. 5, and the precharge circuit 30 is connected to the second read buses RBUS2T and RBUS2N at a position in the proximity of the connection points between the second data amplifier 40 and the second read buses RBUS2T and RBUS2N.
Here, parasitic resistances RT and RN of wirings are present between the points (RBUS2T(a) and RBUS2N(a)) of the second read bus pair RBUS2T and RBUS2N at which the first data amplifier 20A is connected thereto and the points (RBUS25(b) and RBUS2N(b)) of the second read bus pair RBUS2T and RBUS2N at which the first data amplifier 20B is connected thereto.
FIG. 8(a) illustrates variations of the potentials of the second read buses RBUS2T(a) and RBUS2N(a) and the second read buses RBUS2T(b) and RUBS2N(b) when the first data amplifier 20A is activated, and FIG. 8(b) illustrates variations of the potentials of the second read buses RBUS2T(a) and RBUS2N(a) and the second read buses RBUS2T(b) and RBUS2N(b) when the first data amplifier 20B is activated, for comparison.
The potentials Vt(a) and Vn(a) at which the second read bus pair RBUS2T(a) and RUBS2N(a) is saturated after the first read switch RSW1(a) becomes High and the potentials Vt(b) and Vn(b) at which the second read bus pair RBUS2T(a) and RBUS2N(a) is saturated after the first read switch RSW1(b) becomes High are given, where tile power supply voltage is represent by VCC, the on-resistances of the transistors T20 and T21 are represented by rP, the on-resistances of the transistors T14 and T15 and the transistors T16 and T17 connected in series are represented by rNh and eNl, respectively, and the magnitudes of the parasitic resistances RT and RN of the second read bus pair RBUS2T and RBUS2N are represented by rLINE, by the following expressions (1) to (4): ##EQU1##
The potential differences Vt(a)-Vn(a) and Vt(b)-Vn(b) of the second read bus pair RBUS2T(a) and RBUS2N(a) in the individual instances are given by the following expressions (5) and (6), respectively: ##EQU2##
Consequently, comparison between the potential differences Vt(a)-Vn(a) and Vt(b)-Vn(b) of the second read bus pair RBUS2T(a) and RBUS2N(a) in the individual cases is given by, since the parasitic resistance rLINE has a positive value, the following expression (7): EQU .vertline.Vt(a)-Vn(a).vertline.>.vertline.Vt(b)-Vn(b).vertline.(7)
It is to be noted that, while the second read bus pair RBUS2T and RBUS2N is considered in terms of the saturation potential, since, even if comparison is made at a certain point of time before the second read bus pair RBUS2T and RBUS2N reaches the saturation potential, the expression (7) of a result of the comparison between the potential differences similarly applies, the potential difference between the second read bus pair RBUS2T(a) and RBUS2N(a) when the second read switch RSW2 is changed to High is larger and the operation margin of the second data amplifier 40 is larger when the first data amplifier 20A is activated than when the first data amplifier 20B is activated.
In this manner, in the conventional semiconductor storage device described above, since the potential difference of the second read bus pair RBUS2T(a) and RBUS2N(a) at the point at which they are inputted to the second data amplifier 40 is smaller when data is transmitted from the first data amplifier 20B which is connected to the second read buses RBUS2T and RBUS2N at a position remote from the connection points between the second data amplifier 40 and the second read buses RBUS2T and RBUS2N than when data is transmitted from the first data amplifier 20A which is connected to the second read buses RBUS2T and RBUS2N at a position near to the connection points between the second data amplifier 40 and the second read buses RBUS2T and RBUS2N, starting of amplification of the second data amplifier 40 must wait until the smaller potential difference is obtained sufficiently. Consequently, the conventional semiconductor storage device is disadvantageous in that such waiting causes a delay in data transmission time.
While the potential difference can be obtained in a shorter time if the capacities (current driving capacities) of the transistors T14, T16, T15 and T17 of the first data amplifiers 20 are raised with respect to that of the transistors T20 and T21 of the precharge circuit 30, this involves a limitation since this causes an increase in current consumption.
Further, if the second data amplifier 40 is set so as to start its amplification at a time at which the potential difference when data is transmitted from the first data amplifier 20B which is connected to the second read buses RBUS2T and RBUS2N at a position remote from the connection points between the second data amplifier 40 and the second read buses RBUS2T and RBUS2N is obtained sufficiently, then since transmission of data from the first data amplifier 20A which is connected to the second read buses RBUS2T and RBUS2N at a position near to the connection points between the second data amplifier 40 and the second read buses RBUS2T and RBUS2N will excessively lower the potentials of the second read bus pair RBUS2T and RBUS2N, a second problem is caused that the time for precharging the second read bus pair RBUS2T and RBUS2N again after the data is transmitted increases.
If the transistors T21 and T22 for precharging the second read buses RBUS2T and RBUS2N are made larger in order to reduce the precharging time, not only the current consumption increases, but also the capacities of the transistors T14, TiG, T15 and T17 become relatively low. Consequently, the preceding problem becomes more serious.
In recent years, since the capacity of semiconductor storage device has increased and also the chip area has increased, the parasitic resistances of the wirings for the second read bus pair RBUS2T and RBUS2N are high. Consequently, the problem described above has become significant.
Further, as the speed of operation of a semiconductor storage device increases, also another semiconductor storage device which has a pipeline function in the inside thereof and transfers data successively in a short cycle time has become available. In a semiconductor storage device of the type just mentioned, after the second read switch is switched off, unless the second read bus pair RBUS2T and RBUS2N is precharged at a high speed to prepare for data transmission of a next cycle, the cycle type characteristic is deteriorated. Consequently, also the second problem described above has become significant.

Read bus controlling apparatus for semiconductor storage device


A water-immiscible marker is dissolved in polyethylene glycol or other suitable carrier, and the marker so dissolved is added to a waterborne composition which is used as an additive to a waterborne or water processable composition. Subsequently, the marker is either extracted with a non-polar solvent or detected by means of a surface spot test. From the non-polar solvent, the marker is extracted with an acidic aqueous solution or an alkaline aqueous solution, depending upon the marker, and color-developed. Likewise, a surface spot test can detect the presence of the marker by, if necessary, first softening the marked surface to be tested either chemically or by thermal means, and developing a color with a color-developing reagent placed on the exposed surface. Applications can include the marking of paint, coatings, wax emulsions and water soluble/dispersable additives commonly used in water based applications, e.g., cement additives.

It is well known to tag petroleum fuels with "silent" markers so that the fuels can be identified for tax purposes, source of manufacture, brand identification and dilution adulteration. Such markers are added to the fuels at low levels, typically at levels of 100 ppm or well below, where they are not readily detectable with the naked eye. However, as it is necessary to be able to easily detect the presence of such markers, a simple chemical test must be available for their detection. A typical petroleum marker reacts readily with a reagent, such as an acid, a base, or in the case of markers described in U.S. Pat. No. 4,209,302, the teachings of which are incorporated herein by reference, with acid and a diazotized reagent, to produce a chemical species which is both extractable in an aqueous medium and becomes highly colored through a chromophoric reaction.
The markers in U.S. Pat. No. 4,209,302 have also found a non-fuel use as markers for asphalt additives, as described in U.S. Pat. No. 5,306,343, the teachings of which are incorporated herein by reference. By use of such a marker, it can be determined whether a contractor is actually adding, and in appropriate amounts, the additive which adds substantial life to the asphalt, but which additive is relatively expensive.
For similar reasons, it would be desirable to tag additives commonly used in waterborne or water-processable materials and compositions. Additives in the form of aqueous solutions, dispersions and emulsions, are often added to concrete to improve its water-resistance, strength and long term durability. Hence, it would be desirable to have a tool or means to ensure that the specific additive is, in fact added to the concrete, in certain high liability end-use applications such as concrete structures of bridges or high-rise buildings.
Likewise, a similar liability exists in the paint industry. It would be desirable to have a simple and economic method for brand/manufacturer identification. Paint companies are known to pay-out large sums of money yearly in order to settle paint failure claims. In many cases, the paint manufacturer has no fool-proof method in identifying that it is its paint that has actually failed. Therefore, claims go uncontested and are settled strictly based on receipts which can be easily falsified.
In fact, there may be rationale for tagging and identifying a wide variety of waterborne products, such as adhesives, coatings, sealants, inks and floor finishes. In general, it is desired that the markers be soluble in non-polar solvents and insoluble in water, particularly at generally neutral pH ranges, so that the markers are not leached out of the tagged materials by exposure to aqueous solutions.
Markers, such as those described in U.S. Pat. Nos. 4,209,302; 5,156,653; 5,205,840; and 5,490,872, the techniques of each of which are incorporated herein by reference, are highly effective markers for petroleum fuels and therefore would be desirable to utilize them in waterborne and water-processable systems. However, as such markers are intended to be compatible with oil, in some cases they also tend to be incompatible with water and aqueous media. The markers of U.S. Pat. No. 4,209,302, for example, are incompatible with water, either by themselves or in the form they are usually sold, as a solution in an oil-miscible solvent, such as xylene, plus a fatty acid, such as oleic acid. If such marker/solvent/fatty acid compositions are added to concrete, they could agglomerate and are therefore unsuitable for tagging purposes.
While oil-miscible markers are suitable for tagging hydrophobic materials, such as petroleum fuels; water-miscible markers are generally unsuitable for admixture with waterborne or aqueous-processable systems for tagging material, such as concrete. Because concrete structures are commonly exposed to the elements, water-miscible markers would leach out over time. Accordingly, it is a general object of the present invention to compatibilize hydrophobic markers, of types currently used to tag petroleum fuels, with waterborne compositions, such as concrete additives.

Tagging of waterborne compositions with oil-soluble markers


An RF unit receives radio-frequency signals where a plurality of channels are frequency-multiplexed. An A-D unit converts the radio-frequency signals to digital signals. A processing unit processes the plurality of channels contained in the digital signals which have been converted by the A-D unit. The processing unit includes: a band-pass filter, having bands corresponding respectively to the plurality of frequency-multiplexed channels, which separates the digital signals into the plurality of channels; and a demodulation unit which demodulates the plurality of channels separated by the band-pass filter.

1. Field of the Invention
The present invention relates to the receiving technologies, and it particularly relates to method and apparatus for receiving frequency-multiplexed signals.
2. Description of the Related Art
A plurality of channels in digital television broadcasting or NTSC (National Television Standards Committee) type television broadcasting are frequency-multiplexed. And broadcast waves on a plurality of frequency-multiplexed channels are received by a receiving apparatus. To the broadcast waves, the receiving apparatus carries out a conversion of the radio frequencies to intermediate frequencies and a conversion of the intermediate frequencies to baseband frequencies and at the same time extracts a predetermined channel by the use of a band-pass filter. In addition, the receiving apparatus reproduces a program on the extracted predetermined channel (See Reference (1) in the following Related Art List, for instance).
2. Related Art List
    (1) Japanese Patent Application Laid-Open No. 2001-326863
Under these circumstances, the inventor of the present invention has come to recognize a problem as described below. When a receiving apparatus performs a conversion of radio frequencies of received broadcast waves to intermediate frequencies, it extracts a predetermined channel by a band-pass filter. To demodulate a single channel, there is a need for one converter to perform a conversion processing as described above. Accordingly, a plurality of converters are required if a user wants to view a program on a channel and at the same time record another program on another channel, that is, if a plurality of channels are to be demodulated at the same time. Such a use demands a larger scale of a receiving apparatus. Also, if the video data contained in a program on a channel are coded by MPEG (Moving Picture Expert Group) or the like, there will result a certain amount of delay in the decoding processing. As a consequence, when a channel selection is changed, it may take time before the first of the images is displayed.

Receiving method and receiving apparatus


A spectral computed tomography (CT) ordered subsets (OS) reconstruction method using two sets of projection data having a different number of views is provided. The method includes obtaining a first set of projection data that includes single-energy CT data for a first number of views, obtaining a second set of projection data that includes spectral CT data for a second number of views, wherein the first and second numbers are integers and the second number is smaller than the first number, partitioning the first set of projection data into N equal-sized subsets of projection data, including the second set of projection data in each of the N subsets of projection data to generate N expanded subsets of projection data, and performing OS reconstruction with the N expanded subsets of projection data to generate a reconstructed CT image.

Radiographic imaging, in its simplest expression, is an X-ray beam traversing an object and a detector relating the overall attenuation per ray. The attenuation is derived from a comparison of the same ray with and without the presence of the object. From this conceptual definition, several steps are required to properly construct an image. For instance, the finite size of the X-ray generator, the nature and shape of the filter blocking the very low energy X-ray from the generator, the details of the geometry and characteristics of the detector, and the capacity of the acquisition system are all elements that affect how the actual reconstruction is performed. In the reconstruction, the map of the linear attenuation coefficient (LAC) of the imaged subjects is obtained from the line integrals of the LAC through an inverse Radon transform. The line integrals can be related to the logarithm of the primary intensity of the X-rays passing through the subject.
A third-generation CT system can include sparsely distributed fourth-generation, photon-counting detectors. In such a combined system, the fourth-generation detectors collect primary beams through a range of detector fan angles.
In spectral CT, with combined 3rd- and 4th-generation geometries, two datasets from the 3rd- and 4th-generation detectors having different numbers of projection views are involved in the reconstruction problem. No methods are known for using the ordered subsets (OS) methodology for this specific reconstruction problem. The conventional OS scheme cannot be directly applied to this spectral CT reconstruction problem to gain speedup because two sets of data having different numbers of projection views are involved, one set containing a sparse number of views and the other set containing a dense number of views.


A controller of a color copier according to the invention includes a drive controller section, a pattern generation section, and a velocity information acquisition section. The drive controller section changes the phase relationship in rotation angle between a drive roller driving the transfer belt and individual photosensitive drums of a plurality of imaging sections. The pattern generation section forms registered marks on the transfer belt by using the plurality of imaging sections before and after the drive controller section changes the phase relationship. The velocity information acquisition section acquires at least one of a velocity fluctuation component of individual photosensitive drums and a velocity fluctuation component of the transfer belt in accordance with the result of sensing by a mark sensor for two registered marks formed by the pattern generation section.

1. Field of the Invention
The present invention relates to an imaging apparatus, such as a copying machine and a printer, and an imaging method thereof. More specifically, the invention relates to a tandem color imaging apparatus having a plurality of photosensitive drums, and an imaging method thereof.
2. Description of Related Art
Conventionally, imaging apparatuses include those of a type having a plurality of photosensitive drums. An imaging apparatus of this type transfers toner images from individual photosensitive drums to a transfer belt and superpose the images thereon whereby to acquire a color image. In general, in an imaging apparatus of this type, registered marks are formed on the transfer belt and a mark sensor is used to detect them. The detections are performed to enable the toner images, which are formed on the individual photosensitive drums, to be superposed without interposition mismatches on the transfer belt. Then, the results of the detections are used to correct a variety of static positional mismatches caused by positional variations in image creation systems.
However, in rotational driving of components such as driving gears of the photosensitive drums, it is unavoidable that periodical velocity fluctuating components are added to rotational velocities of outer circumferential surfaces of the photosensitive drums. This is attributed to rotation-axis eccentricity of the drums that occurs depending on the manufacturing precision and the like. The occurrence of periodical velocity fluctuating components remains as a problem in achieving high level alignment. This is because the occurrence of periodical velocity fluctuating components causes dynamic positional mismatches, i.e., periodical positional mismatches even after static positional mismatches have been corrected. To overcome the problem, a method has been developed and attempted that detects the phases of individual photosensitive bodies in accordance with registered marks. However, the velocity fluctuation components to be detected in accordance with registered marks are overlap-added with velocity fluctuation components of a transfer-belt driving roller in addition to the velocity fluctuation components of the photosensitive drums. There arises another problem of how to decompose the overlap-added component to detect velocity fluctuation components of the photosensitive drums thereby to obtain precise phases of the photosensitive drums.
Conventionally, various types of methods for detecting a velocity fluctuation component of a transfer belt, which is one of the two components of velocity fluctuation, have been developed. By way of example, according to the techniques disclosed in Japanese Unexamined Patent Application Publication No. 09-62047, multiple marks are preliminarily formed on a transfer belt, and the marks are sensed by sensors at two locations. Thereby, the belt velocity is obtained from the time of movement of the marks between the sensors. By way of another example, techniques according to U.S. Pat. No. 6,393,244, a mark writing means is provided separately from photosensitive drums. The writing means is used to form a mark excluding the velocity fluctuation component of the photosensitive drum. In addition, techniques using electrostatic marks to prevent overuse of toner are also disclosed.
However, any of above mentioned conventional imaging apparatuses and imaging methods thereof requires two sensors to detect the belt velocity. Further, the apparatus disclosed in the latter publication has the dedicated mark writing means and a dedicated mark detecting means. The dedicated means causes increase of costs of the imaging apparatus, and in addition, requires spacing for mounting the individual members.

Imaging apparatus and imaging method therefore

Konica Minolta Business Technologies, Inc.


An engine arrangement having a gas engine, an exhaust gas tract with an exhaust gas catalytic converter in the exhaust gas tract, a propellent gas feed tube connecting a gas supply to the engine, and a cleaning device in the gas feed line.

1. Field of the Invention
The invention concerns an engine arrangement having a gas engine, in the exhaust gas tract of which there is preferably arranged an exhaust gas catalytic converter. Arranged in the propellent gas feed line to the gas engine is at least one cleaning device for the adsorptive cleaning of the propellent gas, which includes a regeneration device for regeneration of the adsorption agent.
2. Description of the Related Art
When using internal combustion engines (gas engines) for using the energy of biogases (in particular sewer gases or disposal site gases), the use of an exhaust gas catalytic converter has hitherto not been economically meaningful because trace substances contained in the propellent gas have a strongly adverse effect on the activity of the exhaust gas catalytic converter in a short period of time.
It is already known that the propellent gas can be freed of catalyst poisons by means of an adsorptive cleaning device (U.S. Pat. No. 4,523,548 A).
The capacity of the adsorption agent (in particular activated carbon) is limited. It was therefore hitherto frequently necessary to replace the adsorption agent at or shortly before attainment of a condition of saturation. Since the replacement of the adsorption agent by a fresh adsorption agent and disposal of the charged adsorption agent represents a considerable cost factor, it has already been proposed that the adsorption agent should be regenerated, in particular by being heated (U.S. Pat. No. 4,523,548 A). In that regeneration operation the adsorption agent can remain in the cleaning device. It is only freed of the trace substances (biogas accompanying substances or impurities) adsorbed from the propellent gas. In U.S. Pat. No. 4,523,548 A however the trace substances which are driven out of the adsorption agent are fed to the engine again, which in accordance with the object of the present invention is precisely to be prevented.


A comprehensive light-emitting diode device including a translucent substrate, a light-emitting diode chip, a reflective layer, a first wavelength conversion layer, and a second wavelength conversion layer. The translucent substrate includes a first surface and a second surface opposite to the first surface. The light-emitting diode chip is disposed on the first surface. The reflective layer is disposed on the first surface. The light-emitting diode chip is surrounded by the reflective layer. The first wavelength conversion layer is disposed on the first surface. The light-emitting diode chip and the reflective layer are covered by the first wavelength conversion layer.

1. Technical Field
The present disclosure relates to a lighting-module. More particularly, the present disclosure relates to a lighting-module including a comprehensive light-emitting diode device.
2. Description of Related Art
Chip-on-glass technology is a method to fix a light-emitting diode chip onto a transparent glass substrate. However, side-directional light emitted by the light-emitting diode chip can pass through the transparent glass substrate, and may result in the leakage of blue light. Consequently, products of chip-on-glass technology have deficiency in how they emit light, thus consumers tend to stay away from this product.

Comprehensive light-emitting diode device and lighting-module


A computer-implemented method, system and computer program product for creating user experience designs. User requirements for creating user experience designs are gathered. After gathering the user requirements, such user requirements are analyzed in connection with historical user experience designs. A user experience flow is then derived based on these analyzed gathered user requirements. Furthermore, a theme for a user experience design is received. Additionally, a sketch (e.g., paper sketch of a user interface) is received from a user, which is transformed into a wireframe. User interface elements and components are then derived based on the derived user experience flow and the received theme. A user experience design is then generated in the wireframe based on these derived user interface elements and components. In this manner, user experience designs are created that can be used to create products that provide meaningful and relevant experiences to users.

User experience (UX) is a person's emotions and attitudes about using a particular product, system or service. It includes the practical, experiential, affective, meaningful, and valuable aspects of human-computer interaction and product ownership. Additionally, it includes a person's perceptions of system aspects, such as utility, ease of use, and efficiency. User experience may be subjective in nature to the degree that it is about individual perception and thought with respect to a product or system. User experience varies dynamically, constantly modifying over time due to changing usage circumstances. Simplified, user experience is about how a user interacts with, and experiences, a product.
User experience (UX) design is the process of supporting user behavior through usability, usefulness, and desirability provided in the interaction with a product. User experience design encompasses traditional human-computer interaction (HCI) design and extends it by addressing all aspects of a product or service as perceived by users. In other words, UX design is the process of designing (digital or physical) products that are useful, easy to use, and delightful to interact with. Such UX designs are used by design teams to create products that provide meaningful and relevant experiences to users.

International Business Machines Corporation


A simulation is carried out of a projection based on an electronically stored circuit pattern and adjustable projection parameters and optical parameters which characterize the specific characteristics of a projection apparatus. Positions at which it is predicted that side lobes will occur in the event of an actual projection are identified in the calculated circuit pattern. The positions of the side lobes are transmitted to a manufacturing unit and are recorded in a measurement program. A wafer, which has been exposed by a mask, is inspected for side lobes, at least at precisely those transmitted positions using the measurement program. The adjustable projection parameters are adapted, a radiation-sensitive layer is removed from and reapplied to the wafer and the projection is repeated with the adapted projection parameters depending on the detection result. The control process is repeated until the side lobes have been completely prevented.

When circuit patterns, which are formed on chrome masks, are projected by reduction optics onto semiconductor wafers, the intensity of the zero diffraction order of the electromagnetic radiation, is used to form the structure on the semiconductor wafer. If, in general, the radiation dose of the first and of a higher diffraction order exceeds a limit value for the sensitization of the radiation-sensitive layer, then undesirable parasitic structures can be formed in the immediate vicinity of the structures, which are intended to be formed in the radiation-sensitive layer. These parasitic structures are also referred to as side lobes.
Side lobes virtually never occur in chrome masks because the intensity component in the zero diffraction order is large compared to those higher diffraction orders, and because the structure separations or grating periods of the circuit patterns are formed to be comparatively large. The interval between the diffraction orders is very small so that local maxima occur in the flanks of the resist profiles and are projected from the circuit pattern into the radiation-sensitive layer.
The circuit patterns, which are formed in a radiation-sensitive layer, are miniaturized by the use of phase masks. These result in steeper resist profiles and intensity profiles in the imaging plane. They have the intrinsic characteristic of having a greater proportion of the intensity of the light in higher diffraction orders. Due to miniaturization, their distance from a structure to be formed in the radiation-sensitive layer is greater than in the conventional case.
In particularly poor cases, diffraction maxima of a higher order of mutually adjacent structures may be superimposed on one another. This then increasingly leads to the formation of side lobes. If the radiation-sensitive layer, which has been exposed in this way, is developed, and the resultant resist structure is transferred to a layer, which represents a contact hole plane in memory products, then the formation of undesirable electrical connections and failure of the integrated circuit is possible.
This disadvantageous effect is assisted by possible drift in the wavelength of the projection light beam when it passes through different parts of the lens system of the projection optics, or of the phase mask.
If the structure of a layout pattern is transferred to a wafer by an x:1 reducing projection apparatus, side lobes may be created, for example, by pure edge diffraction as a result of discontinuous Fourier transformation, or as a result of the diffracted light being superimposed on the background radiation. The intensity of side lobes increases as the transmission increases, and, for coherent light, is described by:ISide-Lobe=|Emin|2=E2*(1.09*SQRT(T)+0.09)2 where T is the local transmission. For partial coherence, this side lobe intensity can be described by means of Lommel functions. ISide-Lobe for a phase mask (PSM) is in consequence greater than ISide-Lobe for a light/dark mask.
One particular problem with large scale integrated periodic circuit patterns is that side lobes are regularly mapped into the radiation-sensitive layer. Since side lobes occur regularly, side lobes are difficult to identify during subsequent inspection of the semiconductor wafer, particularly when no reference pattern with which the mapped circuit pattern can be compared is available for inspection. The regular arrangement of the side lobes gives the operator of the inspection equipment the impression that they represent a part of the circuit, and are thus part of the layout.
The problem of the occurrence of side lobes is identified in the back end, when functional tests of the completed circuits are carried out on the semiconductor wafer. However, the integrated circuits can no longer be repaired at this development stage, so that 50 to 100 wafer batches, each comprising 25 semiconductor wafers, for example, will often have been produced incorrectly with side lobes before the damage can be identified.
Until now, one approach has been to arrange the circuit patterns such that side lobes are deliberately used to form structures which themselves in turn represent part of the circuit pattern. However, this approach has not been found to be practicable, due to the difficulty in determining the tolerance limits for the parameters which can be used for projection, such as focus, radiation dose, numerical aperture, etc.
A known solution describes carrying out a computer simulation of the transfer of the circuit pattern to the radiation-sensitive layer. The simulation is carried out based on the electronically stored data (layout data), which represents the circuit pattern, and the projection apparatus parameters, which are set for the projection. The simulation result is used to identify positions in the electronically stored circuit pattern at which the side lobes are predicted to occur during projection under the stated conditions. The design of the electronically stored circuit pattern at the corresponding positions, and in the vicinity of these positions, is changed in a subsequent step to predict that side lobes will no longer occur. The mask with the changed circuit pattern is not produced until this stage, and is used for the actual projection onto a semiconductor wafer.
An analogous method for identification of side lobes and for correcting them can also be found, for example, on the Internet at:
http://www.mentor.com/dsm/techpapers/mentorpaper—2964.pdf.
The known methods, however, do not take account of large-volume manufacturing conditions. Typical large-volume manufacturing sites producing 10,000 to 50,000 or more wafer starts per month have a large number of exposure systems and projection apparatuses. Some of which differ not only in manufacturers or different technology generation, but also, even if the equipment type is identical, considerable discrepancies, for example, with respect to lens characterization or the radiation source. Each of the individual exposure systems has its own individual tolerances, which are dependent on manufacture, which, if exceeded make the formation of side lobes during projection probable. Even during the design stage of the circuit pattern, a single computer simulation cannot take account of these differences in the manufacturing conditions.
Taking into account manufacturing conditions, a method for wafer exposure which can avoid the occurrence of side lobes is desirable.

Method for projection of a circuit pattern, which is arranged on a mask, onto a semiconductor wafer


Provided is a curable organopolysiloxane composition which includes (A) an organopolysiloxane containing at least 2 alkenyl groups bonded to silicon atoms within each molecule, (B) an organohydrogenpolysiloxane containing at least 2 hydrogen atoms bonded to silicon atoms within each molecule, (C) gallium and/or an alloy thereof, with a melting point within a range from 0 to 70° C., optionally (D) a heat conductive filler with an average particle size within a range from 0.1 to 100 μm, (E) a platinum based catalyst, and (F) an addition reaction control agent. The composition is useful as a material capable of forming a layer with excellent thermal conductivity that is sandwiched between a heat generating electronic component and a heat radiating member.

1. Field of the Invention
The present invention relates to a curable organopolysiloxane composition, a method of producing such a composition, a cured product thereof, the use of such a cured product as a heat conductive layer, a semiconductor device containing such a heat conductive layer, and a method of producing such a semiconductor device.
2. Description of the Prior Art
Heat generating electronic components mounted on printed wiring boards, including IC packages such as CPUs, undergo an increase in temperature as a result of the heat generated during operation of the component, and because this temperature increase can cause deterioration in the component performance or even failure of the component, a heat conductive sheet with good thermal conductivity or a heat conductive grease is usually sandwiched between the IC package and a heat radiating member with heat radiating fins, thereby efficiently conducting the heat generated by the IC package or the like through to the heat radiating member, which then radiates the heat away. However, as the performance of electronic components and the like improves, the heating value of the components also tends to increase, meaning there is a demand for the development of materials and members with even better thermal conductivity than conventional materials.
Conventional heat conductive sheets offer workability advantages as they are easily mounted and installed. Furthermore, heat conductive greases offer other advantages in that they are unaffected by irregularities in the surfaces of the CPU or the heat radiating member, and conform to, and follow these irregularities, meaning the two components can be held together without any intervening gaps, thus ensuring a small interface thermal resistance. However, heat conductive sheets and heat conductive greases both require the addition of a heat conductive filler in order to achieve thermal conductivity, and because the apparent viscosity of either material must be restricted to a certain upper limit, in order to prevent any obstacles to workability or processability within the production process in the case of a heat conductive sheet, and in order to prevent any workability problems during application by syringe to a heat generating component in the case of a heat conductive grease, there is a limit to how much heat conductive filler can be added to either material, meaning a favorable thermal conductivity effect cannot be achieved.
As a result, methods of blending a low melting point metal into a heat conductive paste (patent reference 1, patent reference 2), and a particle-based material that fixes and stabilizes a liquid metal within a three phase complex (patent reference 3) have been proposed. However, these heat conductive materials that use low melting point metals have a number of drawbacks including contamination of components other than the coated component, and bleeding of oily material if used for extended periods.
[Patent Reference 1]
JP7-207160A
[Patent Reference 2]
EP 0696630
[Patent Reference 3]
U.S. Pat. No. 6,624,224

Curable organopolysiloxane composition and semiconductor device


A double walled insulated tubing string (46) adapted to be hung from a well head (58) has an inner tubing string (21) formed of plural inner tubes and a radially outer tubing string (22) formed of plural outer tubes, the strings being independent of one another apart from axially fixing the strings relative to one another at the top end of the tubing string, although axial fixation may also be provided at the lower end of the tubular strings if desired. An annular insulating gap (30) between the tubing strings (21, 22) is hermetically sealed at both opposing ends and may be evacuated. Inner and outer tubing strings may be run into a well using conventional oil well drilling technology and there is no mechanical connection between the inner and outer tubing strings (21, 22), especially at connections of the respective inner and outer lengths of tube. To maintain the inside of the outer tubing string (22) free from formation liquids before the inner tubing string (21) is run into the well and sealed against the outer string at its lower end, a temporary plug (31) initially closes the lower end of the outer string and is de-activated before liquid can flow through the thermally insulated dual tubing string (46).

(1) Field of the Invention
This invention relates to double walled insulated tubing and to a method of installing such tubing in a well, such as a geothermal or oil well.
There is requirement to provide excellent thermal insulation properties in a tubular pipe string where it is required to bring warm or hot liquids to the surface from a deep depth. In other words, it is required to keep the liquid cooling on its traverse from the bottom of the well to the top of the well to a minimum, even though the temperature of the surrounding formations may drop by an average of3.degree. C. per 100 meters. Such applications are as follows:
1. Geothermal wells which produce hot water from deep aquifers at rather low flow rates where the thermal water would otherwise cool a considerable amount on the traverse to the surface, thereby losing thermal energy available to surface consumers. PA1 2. Closed loop geothermal wells where thermal heat exchanger liquid, which is commonly water, is pumped down to the bottom of a well in an annular space formed between a cemented casing string and a tubing string while drawing thermal energy from the surrounding formations and subsequently transporting the thermal energy to the surface through the tubing string. PA1 3. Oil wells producing crude oil with a high bitumen or paraffin content. Without an efficient thermal insulation, the oil in the tubing string cools considerably as the oil flows towards the surface installation. Once the temperature drops below a level which is specific to the type of oil, bitumen or paraffin starts to change to the solid state and adhere to the internal wall of the tubing string. As a result, flow resistance increases due to the decreased cross-section of the tubing so that sucker rods may become stuck and break. To pump cool and, therefore, highly viscous oil through the pipeline sections close to the well head requires an unnecessary high amount of energy. PA1 4. To produce oil that is already highly viscous in the downhole oil bearing formation where hot steam is pressed into the formation around the well bore to heat up the viscous oil and, thus, improve its flow behaviour. Heat losses on the way to the surface are required to be low so as not to cause any unnecessary flow pressure drop in the production tubing string. PA1 providing a first length of outer tube with sealing means at a lower, in use, end thereof for preventing liquid ingress into said outer tube, PA1 mechanically connecting a second length of outer tube to the end of said first outer length remote from said sealing means to form an outer tubing string, PA1 suspending said outer tubing string from support means, PA1 locating first and second connected lengths of inner tube forming an inner tubing string inside said outer tubing string, said first and second inner lengths of tube being mechanically connected together, and said inner tubing string being spaced from said outer tubing string to provide a thermal insulation gap between the inner and outer tubing strings, said inner and outer tubing strings being discrete and separate from one another over substantially the whole lengths thereof. PA1 Advantageously, to equalise the hydro-static pressure against the outside of said sealing means in a well bore, the internal tube string is filled with a liquid and said sealing means is subsequently de-activated, for example pumped open.
(2) Description of the Related Art
Pipe strings that are covered with glass or stone wool and then wrapped with foils or strips of thin steel sheets to shield the insulating layer against water are frequently used for surface applications. However, water may enter the insulating material through small holes or cracks that may occur in the surrounding cover and reduce the insulating properties of such a string. Therefore, this known method cannot be used to thermally insulate production tubing strings exposed to high pressure liquids in the annular space between the tubing string and a deep wells' casing.
Pipe made from fibreglass has a lower thermal conductivity than steel and is usually used for pipelines or tubing strings for corrosive media rather than for the purpose of thermal insulation because the thermal properties are usually insufficient. Temperature limits and lower strengths further reduce the possible range of applications of pipe made from such material. Fibreglass material is also considerably more expensive than steel pipe of the same diameter and cannot be used in oil wells equipped with reciprocating sucker rods. Also, inventory costs would rise if fibreglass tubing has to be kept in stock in addition to the standard steel tubing that is generally used in oil field operations.
Hitherto, thermally insulated injection and production tubing strings have sometimes been used to complete steam injection wells to obtain increased thermal efficiency of the system. The strings, which often have a length exceeding 1,000 meters, are constructed from individual lengths of double wall pipe, each of which usually has a length of about 9 meters--that is equivalent to range 2 API tubing joints--to be run and retrieved by oil field rigs in the same way as single wall strings.
The most common version of such a string is shown in the Composite Catalogue of Oil Field Equipment, Volume 1, page 988H, 35th revision, 1982-83, published by Gulf Publishing in the U.S.A. The prior art tubing string will now be described with reference to FIGS. 1 and 2 of the accompanying drawings in which FIG. 1 shows a longitudinal cross-section of a tubing string and FIG. 2 shows an enlarged, detailed, longitudinal cross-sectional view of a part of the string shown in FIG. 1 to more clearly show the connection between two lengths of tubing.
The thermally insulated tubing shown in FIG. 1 depicts one individual length of thermally insulated tubing having connections at opposing ends thereof, but it is to be realised that in practice there would be a plurality of such tubes lengths used to form a thermally insulated tubing string. FIG. 2 shows constructional details of the threaded connections used to form a length of insulated tubing connected one to the other.
In FIGS. 1 and 2, an internal tube 1 has the internal diameter thereof increased at opposing ends and the internal tube 1 is positioned concentrically inside an external tube and the opposing ends of the internal tube are welded to the external tube 2. Located in the annular space 3 formed between the external wall of the internal tube and the internal wall of the external tube is an insulation medium such as air. The external tube 2 is slightly longer than the insulated double wall section so that connecting screw threads can be cut at opposing ends of the external tube. Double box couplings 4 are used to link one length of dual insulated tubing to the next dual tube in an axial direction. So as to avoid internal diameter changes at each joint connection in the string, which would undesirably increase dynamic pressure losses in the flow of fluid, e.g. oil, non-insulated section sleeves 5 are inserted at the tube ends at the time of running the string into the well.
Mechanically, such strings fulfil all the strength requirements for deep wells. However, even in the ideal case where liquid from the well bore does not enter into the annular space 6 between the sleeve 5 and the box coupling 4, a considerable amount of thermal energy is lost through the thermally conducting bridges created by the internal and external tubes being welded together and also by there being a mechanical connection between the sleeve 5 and the box coupling 4. However, water or oil will usually enter the annular space 6 to further reduce the efficiency of the insulation. Any mechanical damage to the internal tube 1 caused by reciprocating sucker rods or by corrosion will permit liquid to flow into the annular space 7 between inner and outer tubes, thereby causing a thermal bridge that will not immediately become visible at the surface since the annular space is closed off at the end of each internal tube by the internal tube being welded to the external tube.
Another short coming of this type of insulated string is the requirement to weld the internal and external tubes together. In the drilling industry, it is usual to avoid, wherever possible, welding tools or equipment that is positioned downhole because such welds are the starting points for corrosive leaks. Thus, in the present thermal insulated tubing string example, welding between the internal and external tubes may well be the starting point for a corrosive leak. If corrosion starts from inside the annular space 3 between the two tubes, it will neither be detected visually nor by non-destructive inspection methods commonly used in the oil and gas industry.
When steel tubes leave the production line of a factory they normally have wide length tolerances. So as to match internal and external tubes of dual wall tubing, tubes have to be cut to matching length, thus increasing material cost. The main reason why dual wall tubing strings are not more frequently used is the high cost of purchase, being a multiple of the cost of plain tubes, as well as the increased delivery times for the especially manufactured welded joints and, lastly, but not least, increased inventory levels.
Another dual wall pipe designed for thermal insulating purposes is disclosed in EP-A-0138603. This reference overcomes the difficulty of the above-mentioned prior art by providing a passageway between the connection of two connected lengths of tubing so that the annular space in the respective lengths of tubing are connected together. Thus, in EP-A-0138603 the ends of the internal and external tubes are connected together by a wall and a small passage having a smaller cross-sectional area than the cross-sectional area of the annular space extends longitudinally axially from the annular space outwardly of the conjunction of the internal and external tubes. Because the location of the passage in each tube may not exactly align with one another, so the longitudinally axially outermost portion of the passage is enlarged in cross-sectional area so as to ensure that when two lengths of dual walled pipes are connected together, their respective passages will be interconnected. At an internal and external side of the passage where the two lengths of tubing are connected together there is provided respective annular seals to create a pressure seal between the annular space inside the insulated tubing string and both the liquid inside and around the insulated string.
The annular space may be filled with any desirable insulated gas or liquid and may, alternatively, be evacuated from the surface. Thus, the interconnected annular space can be used to check for leaks in any of the seals or in the walls of the tubing. If the annular space is initially filled with gas, a leak is indicated by an increase in pressure which will rise until the pressure in the annular space balances the pressure of the liquid, either inside the insulated string or outside of it. Once again, this reference has the disadvantage of the above-described insulated dual wall tubing and if either the internal or external tubing should have a leak, the leaking substance will extend throughout the annular space of the whole string. In such an event, it is difficult to locate the position of the leak which may be in elastomer seals radially inward and outward from the passage.
Another known dual wall pipe for reverse circulation drilling is disclosed in GB-A-1204026. In this reference, two concentric tubes are connected to one another by fins that are welded in the annular space between the internal and external tubes. The internal tube is recessed into each end of the external tube and the external tube is provided with a screw thread for connecting individual lengths of tube together. When a string is run into a well, a bridging sleeve having seals at opposing ends thereof is inserted over the internal tube of the upper and lower string section to seal the internal tubes of two different dual wall sections together. Thus, the sleeve extends into the next tubing joint where it is sealed against the internal tube of the next section. The requirement for sleeves connecting the internal tubes to one another adds to the cost of purchasing, storing and maintaining the string. However, a dual wall tubing constructed in accordance with this reference also has the disadvantages mentioned above in that the internal and external tubes are mechanically connected together, thereby creating a thermal connection between the inner and outer tubes.
A thermally insulated pipeline for transporting liquids and gas over the Earth's surface is disclosed in WO91/19129. This reference discloses two concentric steel tubes spaced by an annular space and in the annular space is an insulating material formed of micro-glass fibres or micro-mineral fibres having a compressive strength sufficient to keep the inner tube suitably spaced from the outer tube. The insulating material in the annular space is required to carry the weight of the internal string, since the tubular strings are approximately horizontal, without the insulating material losing its insulating properties. So as to have the appropriate insulating properties, solid insulators are referred to which are extremely porous. These support insulators add to the cost of the tubing string but, even worse, liquids which may pass into the annular space through a leak in one of the internal or external tubular strings will enter the pores of the insulating material of the insulators so that the material has to be replaced.
There is no disclosure in this reference of running such a string of generally independent concentric tubular members designed for more or less horizontal pipelines into a liquid filled, generally vertical, borehole or well and where the annular space between the internal and external tubes would have to be sealed against the influx of liquids contained in the well.
Oil field equipment is not designed to simultaneously run or pull concentric strings of pipe with differing diameters. Oil field tubing joints, according to the worldwide accepted API standard, do not have uniform lengths and joint lengths fluctuate considerably. Only with non-standard, more expensive tubes machined to identical lengths, can concentric strings of pipe be run simultaneously in a slow operation. Although above the surface pipelines are usually welded because at any time access can be obtained from the surface at any point along the line, in distinction, downhole tubing strings are usually threaded since, otherwise, the string has to be cut into slices every time it has to be pulled from the well for any reason.

Double walled insulated tubing and method of installing same


A method for preventing bulges in liquid packaging. Disclosed is a mechanical process for squeezing the carton during the carton sealing process. When sealed, a partial vacuum is created, thus making the filled and sealed carton side walls concave. Over an extended period of time, the vacuum will release to the point of having a straight wall carton.

The invention is concerned with preventing the bulging of side walls in liquid packaging. More particularly, the invention is directed to a fill process which producing concave side walls which forces liquid into the carton head space preventing carton distortion outward.
The use of paperboard packaging for liquid products in gable top contains causes container bulge problems. The bulge on the sidewalls of the carton results in loss of sales and perception by the consumer that the product is spoiled.
It is an object of the present invention to provide an economical solution to the bulge problem.
It is a further object of the present invention to provide a filling process for liquid packaging wherein sidewalls are mechanically squeezed to produce a resultant concave shape.
It is a further object of the present invention to produce and provide a filled and sealed carton which will retain shape and over time result in a straight walled carton.
Additional objects and advantages may become apparent from the details of the process as more fully hereinafter described.

Method for preventing bulge of liquid packaging


An optical sub-system has an optical element having a curved surface featured with a plurality of recurring surface tooling marks. The depth of any surface tooling mark is less than 0.2 wavelengths, whereby light is diffracted on the curved surface. A spatial filter blocks the diffracted light and passes the undiffracted light.

Projection, printing, and scanning systems often require the formation of a light distribution that is uniform along a line or over an area. As is well known to those skilled in the optical arts, such a uniform light distribution may be formed via an optical system that comprises lenses that are acylindric (a term used for cylindrical lenses that are aspheric) or other aspherical glass or plastic optical elements.
Traditional grinding and polishing or glass molding processes are well suited for forming conventional lens shapes, such as spherical optical surfaces, radially symmetric aspheres, and flat surfaces. These lens fabrication processes typically yield surface roughness on the order of about 0.7 nm RMS. Traditional grinding and polishing procedures are also used for mold preparation, yielding glass-molded or plastic-molded parts that exhibit surface roughness in the same overall range. However, less conventional shapes, such as acylindric shapes, are not as easily fabricated using these traditional grinding and polishing or molding processes.
Eliminating or minimizing surface defects of optical components is considered to be of critical importance for many types of imaging and laser applications. Lens surface features generated by cutter marks are classified as mid-spatial frequency errors due to their relative size and pitch, and are acknowledged as a significant problem source for UV, visible, and IR applications. Propagation of wavefront errors due to mid-spatial frequency effects can cause unacceptable intensity modulations, even creating potentially damaging hot spots in the beam path for some types of optical systems. Errors at these frequencies can degrade beam quality beyond acceptability in many types of applications and may even lead to catastrophic system failure in extreme cases.
Chief among the problems caused by surface roughness of a lens element or a mirror is unwanted diffraction of light from an unpolished surface. Diffracted orders of light scattered by roughness at the surface interfere with each other as they propagate, forming undesired structures in the light intensity. Because of such effects, an unpolished lens or mirror having periodic surface roughness may be unacceptable for conventional optical applications.
As is well known to those skilled in optical fabrication, polishing and finishing techniques for acylindric lenses are considerably more challenging than the techniques required for finishing rotationally symmetric surfaces. Providing precision molded acylindric surfaces with a 0.7 nm RMS roughness typically requires one or more iterative processes. For example, a precision acylindric mold can be fabricated for initial molding of acylindric structures. The acylindric mold is then polished to form the molded element as a finishing step; this final polishing step is generally performed by hand, by a skilled master optician. As is well known to those skilled in optical fabrication, polishing procedures used to achieve the required surface characteristics must be executed with extreme care, lest the original acylindric shape itself be lost. Moreover, any tooling used to figure the acylindric shape may leave process-induced roughness in the optical component. Similar difficulties arise whether the lens is ground and polished in glass, or molded, or fabricated using a combination of molding, figuring, and finishing techniques. Even where satisfactory surface smoothness is achieved, these fabrication complications can cause an optical component to be prohibitively expensive, especially for apparatus in a prototype stage.
Conventional lens polishing and finishing techniques, used for spherical and plano surfaces, have been successfully adapted for some types of basic non-axisymmetric shapes such as prisms and cylindrical shapes. However, complex acylindric shapes have proved more difficult to polish, particularly for smaller optical components. Thus, it can be appreciated that there is a need for optical design techniques that enable the effective use of acylindric components and other irregular lens structures, without restrictions imposed by the inherent limitations of conventional lens polishing. There is also a need for methods that allow lower cost fabrication of aspherical and other optical elements, particularly for prototyping and low-volume applications.

Unpolished optical element with periodic surface roughness


The present invention provides compositions and methods for increasing the permeability of a stroma around a neoplasm, and particularly to cancer cells associated with solid tumors. In one embodiment, combining a therapeutic IgE antibody with an anti-cancer agent in accordance with the invention increases the delivery of the anticancer agent to the site of, for example, a solid tumor in a subject. In one embodiment, combining a therapeutic IgE antibody with an anti-cancer agent in accordance with the invention potentiates a tumor's responsiveness and sensitivity to the anti-cancer agent.

Conventional cancer diagnosis and therapies to date have attempted to selectively detect and eradicate neoplastic cells that are largely fast-growing (i.e., cells that form the tumor bulk). Despite the availability of a large variety of anti-neoplastic agents, these therapies have many drawbacks. Solid malignancies have supportive connective tissue components derived from non-malignant precursors that protect and nourish growing malignant cells. These stromal tissues prevent antineoplastic agents (e.g. chemotherapeutics) agents from effectively reaching malignant cells, and force doses of antineoplastic treatments to be pushed to upper limits of tolerability. For example, chemotherapeutic agents are notoriously toxic due to non-specific side effects including bone marrow depression, immunosuppression, and gastrointestinal distress, etc. Therefore, compositions and methods that increase the effectiveness of an anti-cancer treatment regimen are still needed.

Methods of increasing delivery of anti-cancer agents to targets


The present invention is directed to the direct application of beneficial or probiotic bacteria to the vaginal niche for maintenance of a healthy vaginal microbiota and to help restore an unbalanced vaginal microbiota. The application is based on the use of selected Lactobacillus strains as anti-pathogenic agents, in particular L. pentosus and/or L. plantarum, against common vaginal pathogens, whereby produced acids such as lactic acid are important antimicrobial factors.

In contrast to the microbiota of the gastro-intestinal tract, the composition of the urogenital microbiota is much less complex. This microbiota develops after birth and is originating from the vaginal microbiota of the mother, the environment and migrating microbiota from the skin and lower gastro-intestinal tract. The vaginal microbiota lives in mutualism with its host and has an important role in health and disease. Although the microbial composition in healthy women can differ, it is typically dominated by one of four Lactobacillus species (L. crispatus, L. iners, L. gasseri, L. jensenii) that are commonly found in healthy individuals. However, in some cases their microbiota is dominated by several facultative anaerobic lactic acid bacteria, without a significant presence of lactobacilli. Therefore, rather than the specific bacterial species, the functional capacity of the microbiota members, among which is the production of lactic acid, plays a key role in maintaining a healthy state.
Several vaginal discomforts are a consequence of a disturbed microbial composition. Infections with Candida albicans, bacterial vaginosis (BV) and aerobic vaginitis (AV) are the most common encountered problems. These diseases/infections/imbalances are characterized by a lowering of the total amount of lactobacilli and overgrowth of yeast (candidose), facultative anaerobic bacteria (BV) and aerobic gram-negative bacteria (AV), respectively. Under normal circumstances, the fungus Candida albicans lives as commensal in the gastrointestinal and the urogenital tract. However, when the normal microbiota is disturbed, the epithelial barrier is breached or when the immune system is malfunctioning, Candida albicans can alter from a commensal to a pathogen. This can cause a broad spectrum of diseases including skin, mucosal and systemic infections. Over the recent years, this organism has become one of the most common causes of hospital-acquired infections. Many of these infections are caused by biofilm formation on the surfaces of medical devices, such as implants. The most important characteristic of Candida biofilm cells is their remarkable resistance to antifungal drugs. Often, the only solution is the mechanical removal of the implant, which is associated with increased procedural morbidity and health care expenditures. Therefore the development of new antifungal agents, in addition to now antibacterial agents, to treat these infections is of great interest.
The production of lactic acid in combination with keeping a low pH seems to give protection against aforementioned infections and dysbiotic conditions and lactic acid seems to be active against bacterial, fungal and even viral pathogens. It is for this reason that lactobacilli are considered to be important in the homeostasis of the dynamical vaginal ecosystem. Potential health promoting mechanisms of lactobacilli are i) to preserve a low vaginal pH (<4.5), mainly by production of lactic acid; ii) production of antimicrobial compounds and competitive exclusion of pathogens; iii) modulation of immune response and iv) strengthening of the epithelial barrier.
Hence, it was an object of the present invention to provide a solution for subjects suffering from vaginal discomforts due to an aberrant microbial balance in the vagina. Thereto, it was found that the topical vaginal use of L. pentosus species is very effective in restoring and/or maintaining a healthy microbiota in the vagina, and is thus very suitable in relieving vaginal discomforts in subjects in need thereof.
Oral formulations comprising Lactobacillus strains have been used before in the treatment of vaginal disorders or for restoring and/or maintaining a healthy microbiota in the vagina. However, oral administration versus direct topical administration are different administration routes and each have a completely different underlying mechanism. In oral administration, in particular a beneficial effect on the general health via immuno-stimulation is intended, whereas by direct vaginal administration, competition with 'unwanted' microorganisms occur.
Topical vaginal administration of compositions comprising live Lactobacillus strains, were found to be useful in the treatment of vaginal infections, such as for example mentioned in WO2012101550, WO15022297, WO03033681, WO0113956, WO20040350726. However, these do not address the use thereof in the restoration and/or maintenance of a healthy vaginal microbiota.
A very recent publication by Tomusiak et al. indicates the relevance of the current invention (Tomusiak et al., 2015). In particular, Tomusiak et al. found that the vaginal administration of Lactobacillus strains sustainably restores the healthy vaginal microbiota. Further to the findings of Tomusiak that were based on L. fermentum, L. plantarum and L. gasseri species, we have found that L. pentosus is particularly suitable in the context of the present invention. Furthermore, Tomusiak used an intravaginal capsule to formulate the Lactobacillus species, whereas we found that the formulation in a non-solid composition is much more effective, due to a better spreading capacity along the vaginal epithelial cells.

Vaginal preparations for maintaining and/or restoring healthy female microbiota


An outside rearview mirror flexing mechanism, which is capable of moving the outside rearview mirror between a flexed position and an extended position and vice versa, and which is of the type comprising an electric motor, a mechanical transmission and an electronic control circuit. The flexing mechanism is capable of attaining an activated state by being connected to an electrical power source, and it is capable of being in a locked position and in an unlocked position. The flexing mechanism is provided with a position detector which is capable of detecting the locked position and the unlocked position.

The rearview mirror flexing mechanisms of the type indicated above are known. For example, the mechanisms described in document ES-A-2 166 677 or in document EP-A-748719, published on 18. Dec. 1996, hereby incorporated herein by reference, represent clear examples of this type of mechanisms. Rearview mirrors normally adopt two positions relative to the vehicle: an extended position, which is that corresponding to the normal position of use, and a flexed or "parking" position, in which the rearview mirror is flexed, normally through rotation around a substantially vertical axis near to the join between the rearview mirror and the vehicle, so that the rearview mirror protrudes less from the general side surface of the vehicle, and is thus further protected.
In some rearview mirrors, such as those in the invention, the movement of the rearview mirror between the extended position and the retracted position is carried out by an electric motor.
These rearview mirrors usually include a locking mechanism. This locking mechanism allows a locked position to be defined, which is the usual position of use, which is when the mirror is in the extended position, in the flexed position or moving between the two, in normal conditions of use. However, if the mirror receives a blow, or it is abruptly knocked by someone's hand, it comes out of the locked position and adopts an unlocked position fulfilling the function of a "mechanical fuse". In this way, it is possible to prevent the mechanism from breaking if it is knocked and/or the possibility of moving the mirror manually if so desired under certain circumstances. Usually, this locking mechanism has indents and protrusions distributed between the fixed and movable part of the rearview mirror which mesh together but can disengage in the presence of a strong force, greater than that produced by the electric motor.
Logically, when the flexing mechanism is in the unlocked position (it is not really an actual position but rather the whole unlocked area extending between two locked positions), the extended and flexed positions no longer correspond to what they should be, whereby the flexing mechanism has to be reset in the locked position so that the rearview mirror can be used correctly.
There are flexing mechanisms which are capable of moving a rearview mirror between a flexed position and an extended position and vice versa. However, these devices are not capable of detecting whether the flexing mechanism is in the locked or unlocked or disengaged position, and therefore it is necessary that the user revises the system manually.
JP-A-11 245 725 and JP-A-11 245 726 disclose a flexing mechanism of the kind disclosed with an electronic control circuit provided with a position detector that is capable of detecting said locked position and said disengaged position of said flexing mechanism. DE-A-199 06 150 and U.S. Pat. No. 5,514,940 also disclose such a mechanism.
However none of the cited prior art includes the features proposed by the present invention.

Outside rearview mirror flexing mechanism and control method thereof


A tool spindle for machining or producing elliptical surfaces, particularly elliptical bores, includes a housing (1) of two parts (31 32), a sleeve (2) rotatable mounted in the housing, a tool carrier shaft (3) rotatably mounted in the interior of the sleeve (2) for carrying a machining tool on the outer end thereof, the tool carrier shaft having an axis of rotation (13) in parallel spaced relationship with respect to the axis of rotation (12) of the sleeve, and a drive mechanism (4, 5, 6, 7, 8, 9, 11, 18, 21, 30) for driving the tool carrier shaft and the sleeve at the same speed in opposite directions.

The invention relates to a tool spindle, in particular a boring spindle for boring bores of elliptical cross-section.
Bores normally have a circular cross-section. In certain cases, however, it is desirable to produce bores the cross-section of which deviates from the circular, and specifically bores which have an elliptical cross-section. Bores of this shape have the advantage that with the same cross-section the dimensions in the direction of the short semi axis are smaller.
The object of the invention is to provide a tool spindle by means of which it is possible to produce elliptical bores of this type. Here, the tool spindle according to the invention serves primarily as a boring spindle. However, it is also possible to use the same tool spindle or one with only slight alterations as, for example, a support for grinding tools or other tools for machining bores of elliptical cross-section.

Tool spindle, in particular boring spindle


A ventilation system includes first and second blowers connected to a plenum in parallel, with a first motor drive to control a speed of an electric motor of the first blower and a second motor drive to control a speed of an electric motor of the second blower. A controller associated with the first blower is programmed to receive a set point for a controlled variable that is controllable by operation of the first and second blowers, estimate a total air flow required from the first and second blowers to reach the controlled variable set point, calculate a blower speed ratio between a first blower speed and a second blower speed that provides the required total air flow at a minimum power consumption level, and generate commands to cause the first blower and the second blower to operate at speeds resulting in the calculated blower speed ratio.

The present invention relates generally to heating, ventilation and air conditioning (HVAC) systems and, more particularly, to a system and method for controlling the output flow of parallel connected blowers to maximize efficiency thereof.
Heating, ventilation, and air conditioning (HVAC) is the technology of indoor and automotive environmental comfort. In HVAC systems, fans and blowers are used to move air and are an integral part of the air handling systems that bring or draw fresh air into buildings. HVAC fans and blowers can be mounted to an exterior wall (ventilation unit) or above the ceiling (plenum fan), or used as part of a ducted system (duct fan). The fan spins or the blower turns by means of an electric motor, thus creating unidirectional air flow. Types of HVAC fans and blowers include vents or ventilation fans, plenum fans, duct fans, duct blowers, roof fans, exhaust fans, inline fans, tube axial fans, vane axial fans, and centrifugal blowers.
According to various system designs, the HVAC fans/blowers can be connected in series or parallel. There are many applications in HVAC design where it is desirable or even necessary to run the fans/blowers in parallel, such as based on space constraints or a desire to provide greater flow, or to provide diversity or standby capability (i.e., backup fan/blower). In some cases, the fans/blowers are identical and in others they may not be identical—primarily because the second fan/blower was added later to increase capacity. The fans/blowers are normally connected to a plenum, with the flow from each fan/blower adding up to meet a specified flow requirement.
In operating the fans/blowers, there are various combinations of speed at which the two fans/blowers can be operated to meet the desired total flow. The combination of speed at which the two fans/blowers are operated dictates, in large part, the overall power consumed in driving the fans/blowers and the efficiency at which the HVAC system is run. As ventilation fans/blowers are, energy-demanding equipment that stand for a significant share of a HVAC system's total energy consumption, the combination of speed at which the two fans/blowers are operated thus is an important factor in improving energy efficiency during system operation and in reducing the total power consumed by the system.
It would therefore be desirable to provide a system and method that enables controlling the output flow of parallel connected fans/blowers to maximize efficiency thereof.

System and method for controlling output flow of parallel connected blowers