The invention relates to a method for processing manure, liquid manure and/or Kjeldahl-N containing waste water being subjected to a nitrification in an aerated reactor containing active sludge and to a denitrification in a high rate recirculation denitrification reactor (13) containing a very compact biomass capable of converting nitrate to nitrogen gas. The loading of the nitrification reactor (9) being controlled to obtain an optimal nitrification and denitrification, the effluent from the nitrification reactor (9) partially being passed to the denitrification reactor (13), adding a source of carbon to the effluent to be passed to the recirculation denitrification reactor (13) and passing another portion of the effluent stream from the nitrification reactor (9) to a separation step (19) to separate a sludge, the effluent from separation step (19) being passed to a discharge line denitrification reactor (37) under the addition of a carbon source if desired. The invention further relates to an apparatus constructed for this purpose.

The present invention relates to a method for processing manure, liquid manure and/or Kjeldahl-N containing waste water, being subjected to a nitrification in a first step and to denitrification in a subsequent step. An aerated reactor which contains active sludge rich in nitrifying bacteria is used in the nitrification step with acid-neutralizing chemicals being added to said reactor if necessary. A high rate denitrification reactor, which contains a very compact biomass which is capable of converting nitrate to nitrogen gas and to which an organic substrate is added, is used in the denitrification step. A method of this type is known from, inter alia, Agrarisch Dagblad of 14 March 1988. With this method the liquid fraction of fermented semi-liquid manure is treated. The biologically degradable organic substances, nitrifiable nitrogen and phosphorus, which are present in the liquid fraction of anaerobic or fermented semi-liquid manure can be largely removed. The method essentially consists in a coupling of a nitrification step in a nitrification reactor in which ammonia is converted by bacteria to oxidized nitrogen with a denitrification step in a denitrification reactor in which oxidized nitrogen is converted by bacteria to nitrogen gas, the phosphate present in the liquid being concentrated as a chemical precipitate in the reactor at the same time. Oxidation of ammonia results in lowering of the pH, which with this method can be countered by metering in lime and/or metering in effluent from the denitrification reactor (recycling) to the nitrification reactor. During the nitrification step of this method there will also be some removal of nitrogen and phosphate by means of nitrogen and phosphate incorporation in the new cells of the active sludge. This nitrogen and phosphate was liberated during the fermentation of the manure whereby degradable substances yield CO.sub.2 and CH.sub.4. With this method the nitrification reactor (which can be either a fed batch reactor or a batch reactor) is operated batchwise. It is then aerated until all ammonia has been nitrified, after which the aeration is stopped temporarily in order to allow the sludge to settle. The nitrified liquid manure is run off for treatment in the denitrification step, while the active sludge remains behind in the nitrification reactor for a subsequent cycle. In the denitrification step the effluent from the nitrification reactor is pumped upwards through a USB (upflow sludge bed) reactor. In this reactor there is a very compact biomass which is capable of converting nitrate to nitrogen gas. In order to allow this step to proceed, an organic substrate--for example methanol--must be added to the reactor. Acid is consumed during the denitrification step, as a result of which the pH in the bacterial bed rises. As a consequence of this rise, an insoluble precipitate of phosphate with the calcium ions present in the liquid forms. The manure processing consisting of manure fermentation and separation of fermented manure, followed by the method for treatment of the liquid fraction of fermented semi-liquid manure, which has been described above, is shown in FIG. 1. (The numerals of this and the following FIGURES are explained in Table A).
A number of manure processing works are being developed at present, for example Promest in Helmond. In these works semi-liquid manure is evaporated to give a dry product, which costs a great deal of energy since semi-liquid manure consists of more than 90% water. Moreover, this evaporation is a complex technology which in fact still has to be developed for use on manure. The cost price of processing of this type for the formation of dry granular or powder manure is consequently very high.
An approach which differs from that described above is the treatment of semi-liquid manure in conventional effluent treatment installations. Currently this is also being used for treatment of liquid manure from calves. The conventional manure treatment has the significant disadvantages that the process produces a large amount of sludge (excess bacteria) and that the process is not capable of removing the phosphate. This means that extra provisions have to be made for sludge treatment and dephosphating. A conventional manure treatment also requires a fairly large amount of space.
This method, as reported in Agrarisch Dagblad of 17 March 1988, has the advantage that it is relatively inexpensive and can be carried out in a compact installation. However, a number of problems also arise in this case in the treatment of fermented manure.
A compact manure treatment installation for manure and fermented manure or Kjeldahl-N containing waste water can be produced and maintained only if:
a) the metering of the fermented liquid fraction is matched to the nitrification capacity of the nitrification reactor. The nitrification reactor must not be overloaded but must also not operate underloaded. PA1 b) The metering of methanol (or other sources of carbon) to the denitrification reactor is matched to the nitrate load in the denitrification reactor. In the case of undermetering not all nitrate is removed; in the case of overmetering, however, methanol (or other source of carbon) is present in the effluent to be discharged. PA1 c) The effluent recycling from denitrification reactor to nitrification reactor is controlled such that it is optimal. Too little recycling leads to a nitrate concentration which has an inhibitory effect on the bacteria; too much recycling has the consequence that the reactor is filled mainly with liquid which has already been treated. PA1 the incoming nitrogen load; PA1 the information from the WAZU respiration meter (described below); PA1 the pH in the nitrification reactor, the criterion for which is that it is in the range limited by 6 and 8.5; PA1 the amount of air required PA1 the residence time PA1 the temperature in both the nitrification reactor and the denitrification reactor, the criterion for which is that this is lower than 40.degree. C.; PA1 the concentration of oxidized nitrogen in the influent for the denitrification reactor, the criterion for which is that the concentration is between 0 and 4 g N/1; PA1 the concentration of oxidized nitrogen in the nitrification reactor, the criterion for which in the sludge/liquid mixture in the reactor is that the concentration is between 0 and 4 g N/1; PA1 the concentration of the carbon source in the effluent from the denitrification reactor; PA1 the gas production in the denitrification reactor. PA1 a nitrification reactor which is provided with aeration, feed of liquid to be treated, feed of acid-neutralizing chemicals, active sludge rich in nitrifying bacteria, sludge discharge, effluent discharge; PA1 a line through which the effluent from the reactor can be fed to the denitrification reactor; PA1 a denitrification reactor which is provided with feed of effluent from the nitrification reactor, feed of a carbon source, an upflow sludge bed (USB) column, a very compact biomass capable of converting nitrate to nitrogen gas, phosphate-rich sludge discharge, effluent discharge, nitrogen gas discharge; PA1 a line through which the effluent from the denitrification reactor can be discharged.
Said points can be achieved by the use of separate instruments, it being necessary to carry out some of the diverse operations by hand. Moreover, the results of the various measurements cannot be integrated and translated into a control action without the intervention of one operator. Furthermore, the effluent from the nitrification reactor can still contain organic substances which cannot be further degraded in the nitrification reactor. Organic material which passes into the denitrification reactor can be converted into inorganic material in that reactor with the liberation of ammonium nitrogen which is then (insofar as it is not fed via the recycle stream) discharged with the effluent.
The aim of a copending European application 90.202728.3 is to eliminate these problems. It relates to a method of the type indicated in the preamble which is characterized in that the loading of the nitrification reactor is controlled and the optimum nitrification and denitrification are obtained on the basis of one or more of the following data:
An aspect of this process may include the use of an instrument, a respiration meter (WAZU respiration meter). Using the respiration meter, the time at which the treatment processes are complete can be established and both the Kjeldahl-N concentration in the liquid fraction of fermented manure to be treated and the nitrate concentration of the effluent from the nitrification reactor (=feed for the denitrification reactor) can be calculated. However, it should be noticed that the use of such a respiration meter is not required. The other data mentioned are also sufficient for a good control of the process. The liquid streams and control lines in relation to the respiration meter are shown schematically in FIG. 2. The respiration meter can control the entire method automatically on the basis of the data collated and calculated by the instrument. However, as already mentioned, such a respiration meter is certainly not necessary.
The nitrification is followed by a denitrification process.
Furthermore, the optimal conditions for the treatment methods have been investigated in both the nitrification and the denitrification reactor. The biomasses in both the nitrification reactor and the denitrification reactor produce heat. Because of the high concentration of biomass and the high rates of conversion which are realized in both reactors, there will be a net excess of heat in both reactors if no measures are taken. It was found in laboratory experiments, that for a nitrifying bacterial population the optimal temperature of this bacterial population is between 31 and 35.degree. C. and that the maximum temperature which can be tolerated is 40.degree. C. On the basis of general scientific information, it can be anticipated that the same temperature limits apply for the denitrifying bacterial population. Thermophilic denitrifying bacteria are known. These operate at temperatures above about 50.degree. C. However, for various reasons it is not desirable to use thermophilic organisms in the denitrification reactor: the effluent to be discharged will be much too warm and the recycle stream to the nitrification reactor may not be too warm. Both the nitrification and the denitrification reactor can be operated only if there is a provision for removal of heat from the respective reactor contents by a suitable means or due to cooling to the air by a suitable design.
For the present method, the conditions in the denitrification reactor must be kept such that phosphate can precipitate. The efficiency of the phosphate removal is dependent on the pH and the HCO.sub.3.sup.- /CO.sub.2.sup.2- ratio in the denitrification reactor.
The desired pH can be obtained by using an organic carbon source for the denitrification reactor with a specific chemical oxygen consumption (COC)/total organic carbon (TOC) ratio in the present method. The fact is that alkalinity (alkali, bicarbonate and carbonate) is produced in the denitrification reactor under the influence of the denitrification reaction. The production of alkalinity is dependent on the COC/TOC ratio of the organic carbon source in the denitrification reaction. Usually methanol is used as an organic carbon source. Methanol has a high COC/TOC ratio and results in a higher production of alkalinity than, for example, glucose, which has a much lower COC/TOC ratio. Experiments have shown that the COC/TOC ratio must be above 3.75.
As stated, the pH falls in the nitrification reactor on the oxidation of the ammonia. To counter acidification of the reactor, an alkali can be metered in or effluent can be recycled from the denitrification reactor to the nitrification reactor. It has been established experimentally that the concentration of oxidized nitrogen in the nitrification reactor in the sludge/liquid mixture is between 0 and 4 g N/1 and preferably is been found that the concentration of oxidized nitrogen in the influent for the denitrification reactor is between 0 and 4 g N/1 and is preferably between 1.0 and 1.4 g N/1. In order to achieve this, the effluent from the denitrification reactor can be of oxidized nitrogen at the feed location in the reactor. Furthermore, this recycling is intended to obtain a higher stream velocity in the denitrification reactor, which promotes the contact between biomass and substrate in the reactor. Recycling can take place directly from effluent stream to influent stream for the denitrification reactor. It is, however, also possible (and in fact better for the overall process) for recycling of effluent from the denitrification reactor to be used, this recycling taking place entirely or partially via the nitrification reactor. The aim of this is then to achieve both a saving in the chemicals consumption for pH control in the nitrification reactor and to achieve a dilution of the reactor contents of the nitrification reactor such that the content of oxidized nitrogen is always lower than 4 g N/1.
Another aspect is the use of a separation step, e.g. a physical/chemical flocculation step and a floccule separator or a membrane technology after the nitrification step. The purpose of said separation previous to the denitrification reactor is catching suspended and colloidally dissolved organic substances, that otherwise would mineralize in the denitrification reactor resulting in the formation of ammonia nitrogen. A physical/chemical flocculation step plus floccule separation is shown schematically in FIG. 3. The residual organic substance can be removed from the effluent with the aid of flocculating adjuvants and a process for separation of the flocculent from the effluent. By positioning the separation upstream of the denitrification step, the organic substances can be removed before they are converted to inorganic substances and ammonium nitrogen is formed. A further advantage of this is that the carbonate content in the effluent from the nitrification reactor is low (lower than in the effluent from the denitrification) reactor, to which organic substrate is added). This is advantageous if a flocculating adjuvant is used which forms a precipitate with carbonate. If a flocculating adjuvant is used which contains cations which precipitate with phosphate, an additional phosphate removal is performed.
The copending application also relates to an installation which is suitable for carrying out the method as described above, comprising:
In the most simple form, the installation (shown schematically in FIG. 2) consists of the combination of a batch reactor (to which all influent (7) is added at once per cycle) or a fed batch reactor (to which the influent is added gradually or stepwise per cycle) as nitrification reactor (9) and a continuously fed upflow sludge bed (USB) reactor as denitrification reactor (13). The two reactors are operated connected in series, without bypass of the nitrification reactor (9) but optionally with backmixing (33) from the denitrification reactor (13) to the nitrification reactor (9).
The use of the WAZU respiration meter (18) (described below), a measurement and control unit with which the course of the respiration rate of the biomass in the reactor (9) is followed, is characteristic of the installation according to the copending application.
The nitrification reactor (9) of the apparatus is provided with aeration (10), a feed of liquid (7) to be treated, a sludge discharge (11), effluent discharge and optionally a feed of effluent from the denitrification reactor (33), all of which are controlled by the WAZU respiration meter (18) (Netherlands Patent Application 86.00396, filed on 6 February 1986). This respiration meter also controls the metering of the source of carbon (14) for the denitrification reactor (13). This denitrification reactor is additionally provided with nitrogen gas discharge (17) and effluent recirculation (33) or discharge (16) (see FIGS. 2 and 5).
Another embodiment of the installation according to the copending application (shown schematically in FIG. 4) is also provided with a line (32) through which the effluent from the denitrification reactor (13) can be partially recycled to the effluent (12) from the nitrification reactor (9) which serves as influent for the denitrification reactor (13) and additionally this installation is provided with a feed of one or more acid-neutralizing chemicals (8) to the nitrification reactor (9).
Furthermore, the apparatus can comprise a combination of the two above installations (FIGS. 4 and 5), i.e. an installation as shown in FIG. 6, this installation being provided with lines through which the effluent (16) from the denitrification reactor (13) can be partially recycled (lines 33 and 32 respectively) to the nitrification reactor (9) and to the effluent (12) from the nitrification reactor (9) which serves as influent for the denitrification reactor (13).
The three last mentioned installations, shown in FIGS. 4, 5 and 6, can comprise a further addition (see FIG. 7) in the form of a feed of chemicals for phosphate precipitation (20).
Furthermore, all of these installations (shown in FIGS. 4, 5, 6 and 7) can be provided with one or more separation or flocculation installations (19). The flocculation installation as such is shown schematically in FIG. 3.
The apparatus according to the copending application which have already been described can be provided with the flocculation installations at various locations (FIGS. 8, 9 and 10). In the installation according to FIG. 8, the flocculation installation (19) is positioned in such a way that the effluent (16) from the denitrification reactor (13) flows through the flocculation installation (19 and FIG. 3) upstream of the recycle (34,35) or discharge (22).
In the installation according to FIG. 9, the flocculation installation (19) is positioned in such a way that only the effluent (16) from the denitrification reactor (13) which is to be discharged flows through the flocculation installation (19).
In the installation according to FIG. 10, which is preferred, the flocculation installation (19) is positioned in such a way that the effluent (12) originating from the nitrification reactor (9) flows through the flocculation installation (19) before it flows into the denitrification reactor (13).
The apparatus according to the copending application in which the nitrification reactor is provided with feed of the effluent (33,34) from the denitrification reactor (13) can be provided with a spray installation (25 in FIG. 10) through which the effluent (33 or 34) from the denitrification reactor (13) can be sprayed into the nitrification reactor (9) to prevent foam formation.
Furthermore, all installations according to the copending application can be provided with one or more buffer tanks (23) (FIG. 10).
In the above process, all effluent (12) from the nitrification reactor passes through the separator (19), this means a high load for the separator.

Method and apparatus for processing manure


A distributed feedback laser comprising a guide layer is disclosed and includes a plurality of waveguides connected in a stepped multi-branch structure, the guide layer serving as a transmission medium for light having a predetermined wavelength, and an active layer, formed on the guide layer, for oscillating light, wherein light is branched according to a predetermined ratio while proceeding from a higher waveguide to a lower waveguide within the guide layer.

1. Field of the Invention
The present invention relates to a semiconductor laser, and more particularly to a distributed feedback laser.
2. Description of the Related Art
A conventional distributed feedback laser, which operates with a spectrum of a single wavelength, is suitable for long distance and high-speed data transmission. However, one disadvantage of such a distributed feedback laser is that its optical feedback characteristic is relatively poor as compared to a Fabry-Perot laser. For that reason, such a distributed feedback laser module, when used for long distance transmission, has a built-in optical isolator in order to prevent laser instability caused by optical feedback. The optical isolator is an expensive device, and thus accounts for much of the module price. If a distributed feedback laser that is not sensitive to optical feedback can be realized, the optical isolator would not be needed. Accordingly, the manufacture of the distributed feedback laser module would have a much lower cost. In general, a distributed feedback laser module that is operated at a speed of over 2.5 Gps has a built-in optical isolator. The optical isolator generally comprises a first and a second polarizer, and a Faraday rotator interposed between the polarizers. The polarization direction of the second polarizer precedes that of the first polarizer clockwise by 45 degrees. That is, after light, which is inputted to the optical isolator in forward direction, is polarized through the first polarizer, the polarization direction of the light is rotated clockwise 45 degrees by the Faraday rotator. The light (the polarization direction of which has rotated) passes through the second polarizer. Also, after light, which is inputted to the optical isolator in backward direction, is polarized through the second polarizer (the polarization direction of the light is rotated clockwise 45 degrees by the Faraday rotator). Then, the light having passed the Faraday rotator, unlike the case of the forward light, radiates at 90 degrees to the polarization direction of the first polarizer, so that the light is completely shut out by the first polarizer.
As described above, the prior art distributed feedback laser module must comprise a high priced optical isolator in order to shut out optical feedback. Therefore, it has a disadvantage in that the manufacturing cost of the distributed feedback laser module is very high.


A completion-detector circuit for detecting completion of the transfer of asynchronous data on a communication channel with signal lines organized according to a delay-insensitive encoding (e.g., dual-rail, m-of-n, Berger encoding) comprises: logic circuitry for detecting the data on the aforesaid signal lines configured for: i) producing a first signal indicating the fact that the asynchronous data on the signal lines are stable; ii) producing a second signal indicating the fact that the signal lines are de-asserted; and an asynchronous finite-state machine supplied with the first signal and the second signal for producing a signal of detection of completion of transfer of the asynchronous data, the detection signal having: a first value, when the first signal is asserted; and a second value, when the second signal is asserted; and being on hold when neither one nor the other of said first signal and said second signal is asserted.

1. Technical Field
The present disclosure relates to asynchronous communications, including communications in Systems on Chip (SoC) and Networks on Chip (NoC). Such systems may include NoCs having a number of IP cores (e.g., Field-Programmable Gate Arrays (FPGAs), Application-Specific Integrated Circuits (ASICs), etc.).
2. Description of the Related Art
Recourse to technologies on a submicrometric scale in the production of micro-electronic systems such as systems SoCs may induce phenomena of various nature (known as "deep-submicron effects") that may result in limitations in terms of performance and/or productivity. Said effects may be noted, for example, in 32-nm technologies and, in an even greater extent, in 22-nm technologies.

Circuit for asynchronous communications, related system and method


Data associated with at least one characteristic associated with the viability of a product is monitored. The data associated with the at least one characteristic is analyzed, and based on the analyzing, at least one future viability state condition of the product is predicted. At least one indicator is displayed related to the at least one future viability state condition.

1. Field
The application relates generally to packaging and, more particularly, to sensing and displaying product information associated with estimating a critical date, or dates, for a product having a predictable life expectancy or maturity.
2. Description of Related Art
Numerous consumer products are sensitive to time, environment, and handling. The notion of critical date(s) for an item relates to anything of importance and consequence happening to the product itself, defining or altering usage consideration. As general examples; a comestible may be no longer pleasing or safe to eat, or may have an expected maturity time-frame, namely, becoming ready for optimal consumption; an item having a limited life-span may no longer be potent enough to be effective; or the like. As some specific examples: wine is best kept a constant moderate temperature and oriented horizontally; meat and some dairy products need substantially constant refrigeration; fruits and vegetables are subject to both environmental storage conditions from the time of harvest—namely, temperature and humidity—and damage by rough handling ("G-loads"); photographic film can be affected by radiation and temperature and humidity changes; batteries have a limited shelf life; and the like.
Generally, products having such sensitivities are sometimes labeled regarding a specific factor relevant to a decision to purchase the individual item. For example, some products are date-stamp packaged so that the consumer can determine freshness. However, most manufacturers or suppliers are very conservative in their estimates, assuming some average degree of mishandling and perishability into these type of product warning calculations. Thus, this date-stamp labeling is an error-prone test for current product condition and also can lead to waste when a safe product is summarily discarded as expired. Some products bear handling instructions, which the consumer can only presume that the shipper has followed.
For the main part, consumers now use a combination of imprecise proxy measures to draw conclusions about a product. They can inspect the packaging for damage; they can try to detect signs of product decay, e.g., odor; they can notice current condition, e.g., refrigerated; they can take into account the reputation of the retailer, shipper, and suppliers. However, none of these measures give any accurate information about the actual previous handling of the product since it has left its point of origin.
Some products are re-inspectible and re-certifiable as to current condition; e.g., fire extinguishers which have a charge (pressure) gauge; some batteries are packaged with a "tester" to determine if they are still charged. These mechanisms provides a slightly better indicator for the consumer as to current condition. However, there are few, if any, labels providing dynamically generated historical data which would be of interest to the consumer; e.g., "what is the travel history of this wine?" In other words, in these current condition mechanisms there is no record visible to the consumer that the product has been handled appropriately in transit from the producer to the present time, perishability and probable expiration.
There is a need for a system including a sensing apparatus with display capability which provides the history of at least one measurable factor associated with a specific product that affects the characteristics of that product. The apparatus should have a data display which assures the consumer that a packaged product has been handled appropriately according to certain measurable parameters over its life since the package was sealed. The apparatus should help enhance consumer satisfaction and safety. The apparatus should give consumers accurate and detailed information about the previous handling of the product, about the current status of the product, and about any predicted critical date(s). The apparatus may even provide a "conclusion" about the status of the product; e.g., current safety for consumption, use, or the like.

Hewlett-Packard Development Company, L.P.


A power supply control for a vehicle includes air-conditioning electric devices and other electric devices. In the power supply control operation, current target power that is necessary for the specific electric device is calculated based on a precedent target power that was calculated the last time the specific electric device was used. An allowed power that is allowed to be supplied to the specific electric device is calculated based on the total power demand of the vehicle. The power to be supplied to the specific device is limited to the allowed power if the current target power is larger than the allowed power and the precedent target power is replaced with the allowed power if the actual power supplied to the specific electric device is limited to the allowed power.

1. Field of the Invention
The present invention relates to a vehicle power supply control apparatus for controlling power supplied to various devices powered by a vehicle battery, and particularly, electric devices of an air conditioning system.
2. Description of the Related Art
An air conditioning system of an electric vehicle driven by a battery-powered vehicle-driving motor includes electric devices such as an electric heater and a motor-driven compressor. Usually, electric power is supplied to the vehicle-driving motor prior to such battery-powered devices used in the air conditioning system.
For example, electric power to be supplied to an electric heater is controlled according to a calculated total demand for electric power to be used by a vehicle. The target amount of the electric power (hereinafter referred to as current target power) to be supplied to the electric heater is calculated based on a previously calculated amount of electric power (hereinafter referred to precedent target power). That is, the current target power is obtained from the precedent target power by adding or subtracting an amount of power to be changed to or from the precedent target power.
If the current target power to be supplied to the electric heater is smaller than an allowed amount (hereinafter referred to as allowed power) determined according to the calculated total demand for electric power to be used by the vehicle, the electric heater is fully supplied with sufficient power. On the other hand, the electric heater is supplied with a less amount of the electric power than the target power if the target power is larger than the allowed power. In this case, it is difficult for the electric heater to provide a suitable heating performance.


An infrared motion detection device for detecting the presence of a target object including special circuitry for reducing false alarms. In particular, coupling circuitry is interposed between signal processing circuitry and comparator circuitry, which serves to match the baseline level of the signal from the signal processing circuitry with the baseline level of a threshold or thresholds defined by the comparator circuitry. The coupling circuitry may be implemented in a particularly simple manner, which reduces the manufacturing cost of the circuitry and the device.

The present invention relates to signal processing methods for use with infrared motion detection devices.
Infrared motion detection devices are commonly used in such applications as burglar alarm systems or automatic lighting devices. In the burglar alarm systems the device activates an alarm whenever an intruder moves into the monitored area. As part of an automatic lighting device the motion detection device causes a light to be turned on when a person or motor vehicle enters the area to be illuminated. Such devices may be used in residential lighting, for example, to illuminate a walkway as a person approaches the front door or to illuminate a driveway as a car approaches.
The devices function by sensing heat emitted from a person or other warm object such as an automobile as the person or object enters the field of view of the device. When the device detects an appropriate heat impulse, it provides an electrical signal to activate the light or other alarm. A problem arises, however, because the devices may also detect heat from any number of extraneous sources within the device's field of view, which could trigger a false alarm or turn on a light at an unwanted time. To counter this problem, infrared motion detection devices typically include signal processing circuitry for distinguishing or discriminating in some measure a characteristic of the signal expected from the desired target. For example, some detection devices include two or more separate detector elements which sequentially receive infrared radiation as an intruder or target object moves across the device's field of view. The included circuitry looks for a sequence of two or more corresponding pulses as the heat from the target object falls on the detectors. Circuitry of this type is disclosed, for example, in U.S. Pat. Nos. 3,760,399; 3,631,434; and 3,958,118. Another type of circuitry looks for a single pulse generated when heat from the intruder or target object impinges upon a single detector element. This type of circuitry seeks to discriminate against unwanted signals by responding only to pulses of a minimum threshold size. In this way the circuitry distinguishes pulses generated by weak incident infrared radiation, which is less likely to come from a human source or a motor vehicle. Circuitry of this type is disclosed, for example, in U.S. Pat. Nos. 3,703,718 and 3,928,843. In addition, such single-pulse circuitry may also include two or more detector elements connected in opposition to one another to discriminate against overall background changes in temperature. A temperature change over the area covered by the multiple detector elements produces opposite signals in opposing detector elements, which cancel one another and prevent the device from responding with an alarm.
Motion detection devices with the above signal processing circuitry nevertheless may still suffer from occasional false alarms or false triggerings.

Motion detector with improved signal discrimination


A trench drain frame, and associated grate, adapted to be mounted atop a commonly available drain pipe, for casting-in-concrete in poured concrete or packed asphalt, or otherwise embedding in a suitably tightly packed supporting material, the frame having a pair of connected side walls, each side wall having a lower base portion with downwardly extending support wall to position and support the trench drain frame over the associated underlying pipe. Once the assembled frame, grate and pipe are cast in concrete, or otherwise supported, the grate is removed, and at least portions of the top of the pipe are removed to expose the interior of the pipe for drainage purposes, and the grate is secured to the trench drain frame. A separable end plate can be used to close off a cut-open end of the trench drain frame, when the later is cut short for a given application.

There have been numerous designs of trench drains and floor drains over the years. These are typified by U.S. Pat. Nos. 5,529,436 (owned by the assignee of the present disclosure), 6,027,283, and 6,612,780. However, there remain certain disadvantages with such drains, particularly in the labor and expense required in initially forming and assembling the trench drain components prior to casting concrete around them for installation and use, and further, because the trench frame sections need to be directly connected to one another, i.e. joined end-to-end. The latter requirement prevents, in effect, any random placement of drains at separate locations. Additional problems with some trench drains include the needed levelling of one given section relative to an adjacent section, the need to frame up the trench drain for the pouring of concrete, and the need to assure the trench drain stays in place, i.e. does not float, while the concrete is being poured.
Additionally, there have been drains where an underlying drainage conveyance was formed to have no top portion, i.e. such a drain had an elongated opening in the top of the drainage conveyance when the latter was created, and a drain grate structure was associated with that opening. Such elongated opening-type drains are typified by U.S. Pat. Nos. 3,815,213; 4,490,067; 5,380,121; and 5,908,266. However, these prior elongated-opening drain devices had disadvantages. For example, they do not permit the grate structure (which usually sits atop the lower elongated-opening conveyance) to directly transmit loads placed on such grates to the surrounding concrete or earthen support structure. Instead, such grate-developed loading forces are placed directly on the underlying conveyance structures, causing them to be weakened. Further, some such prior devices require very convoluted and configured extrusion or injection molding designs, i.e. to create the interconnected upper surface grate and lower elongated opening drainage conveyance structure. Thus they are often costly, both from a mold-making and molding standpoint. They also do not permit use of a detachable drain grate member, for periodic removal of the drain grate to allow for any needed cleaning of the underlying drainage conveyance through the elongated opening.


A sound absorbing component contains a fiber-reinforced thermoplastic resin expanded body having a percentage of void being not less than 50 vol %, and a resin molded body. An air layer is provided between the fiber-reinforced thermoplastic resin expanded body and the resin molded body. This sound absorbing component can effectively absorb the sound especially in the frequency region of 500 to 3000 Hz corresponding to the exterior noise problematic in automobiles, even if it is lightweight and thin.

Sound absorbing materials have been used heretofore in many fields and are often used typically for walls and ceilings of anechoic room.
A specific example of such sound absorbing materials generally used is a combination of plate-shaped sound absorbing components in which woven cloth covers a porous material such as glass wool. These components are suitably applicable to applications in a relatively large scale such as the anechoic room, but are not suitable for sound absorbing components for automobile such as components in an automobile engine room including an automobile engine cover. Requirements for sound absorbing components for automobile are capability of being used in a limited space and capability of exhibiting a sufficient sound absorbing effect. The conventional sound absorbing materials as described above, however, has a lot of problems; for example, it was not easy to freely shape them so as to be compatible with the space, their sound absorbing performance was degraded by absorption of oil or water, an increase of the weight due to the absorption of oil or water made retention of the shape difficult, and so on.
Also known are sound absorbing materials using a foamed body having isolated cells, i.e., cells not communicating with each other. They had, however, problems that the mechanical strength was poor and that a sufficient sound absorbing effect was not attained especially in the high-frequency region.
Further, the sound absorbing components for automobile, such as those for automobile engine and its surroundings, must have not only excellent sound absorbing performance, but also be light in weight. In addition, since they are used in a narrow limited space, the sound absorbing components themselves are required to be compact and thin. Therefore, the sound absorbing components for automobile are excellent in the sound absorbing performance even if being thin and to be readily producible even if being compact. However, the sound absorbing components conventionally known are inadequate in these respects.
An object of the present invention is to provide a sound absorbing component which can be readily produced not only in a relatively large scale, but also in the form of a compact sound absorbing component, which is excellent in the sound absorbing performance even if lightweight and compact, and which can effectively absorb the sound, especially, in the frequency region 500 to 3000 Hz of exterior noise considered to be problematic in automobiles.


An adjustable analog-digital converter arrangement comprising: an input adapted for receiving an input signal; an analog-digital converter operating by successive approximation, having a signal input coupled with the input, wherein said converter is adapted for converting an analog signal at the signal input into a digital value; an attenuator with an output, wherein an input of said attenuator is coupled to the signal input and is adapted for an amplitude change of signals applied to its input, wherein the amplitude change is controllable by means of a control input, and wherein the attenuator comprises switchable capacitors and forms a part of a first stage of said analog-digital converter; a control circuit having an output coupled to the control input of the attenuator and adapted to initialize, as a function of a comparison of a signal output by the analog-digital converter with a threshold, an automatic adjustment of the attenuation by generating a control signal, and having an output for the output of the control signal that is coupled to the attenuator.

Analog-digital converters (A/D converters) are used in integrated circuits for the conversion of analog input signals into digital values. The clocked converters sample the input signal at different times and generate digital values from these samples. For input signals at high levels in the range of several tens of volts, these converters should be manufactured using special production techniques, for example, in a multi-film oxide CMOS process. Analog-digital converters produced in this way are also suitable for signals with exceptionally high input levels in contrast to converters using conventional production technology. Conventional converters could overload at high input signal levels and thus deliver false values or could even be damaged. However, one disadvantage of this multi-film oxide CMOS converter is that the high withstand voltage is achieved only at the expense of space requirements and the conversion rate.
One alternative to the voltage-resistant analog-digital converters consists in attenuating the input signal by a defined factor and feeding the attenuated signal to a conventional analog-digital converter arrangement. The A/D converter contained in this conventional converter arrangement then can be produced using CMOS technology and has low space requirements with a simultaneously high conversion rate. The attenuation of the input signal by a constant factor, however, can lead to problems for input signals with low levels. These are attenuated again so that error during the analog-digital conversion is amplified due to inherent noise within the converter. Under some circumstances, the attenuation can have the result that the level of the supplied, attenuated input signal is smaller than a quantization step of the A/D converter. In other words, the constant attenuation limits the resolving power of the converter for low input signals.
The publication U.S. Pat. No. 5,861,831 and FIG. 9 show a converter arrangement with an active circuit for attenuating an input signal. The arrangement of an active circuit shown in FIG. 9 is realized by an adjustable amplifier V. This is connected to the input of the converter ADC by means of a filter. The amplification factor is set here by a level detector PD to which the signal output by the amplifier is fed. Another level control signal allows a desired setting of the detector PD. Furthermore, a time circuit TC is provided that controls both the actual A/D converter ADC and also the peak detector PD. The signal output by the amplifier V is fed via a filter to the A/D converter ADC. The detection of signal changes in the input signal is limited by the bandwidth of the peak detector PD. The illustrated converter is suitable primarily for converting intermediate frequency signals. In addition, due to the additional level detector PD, the current consumption of the entire arrangement is increased.

Adjustable analogue-digital converter arrangement and method for analogue-to-digital conversion


A rod centralizer and solids control assembly can be mounted on a rod string. The assembly allows well fluid containing high solids to pass through the pump while eliminating the solids from being swept back into the pump barrel or accumulating in the tubing. The assembly can include a body portion coupled to a bristle positioned helically around the body portion. The bristle can be coupled to a piston, allowing the bristle to extend during upward fluid movement and retract when rod rotation stops. The bristle can trap solids, leaving the solids higher and away from a pump intake. This can allow the solids to be lifted out of the pump, preventing solids from collecting on a bottom portion of the pump or tubing. The assembly can include centralizer components that center the rod, preventing it from rubbing against the tubing. Multiple assemblies can be incorporated into the rod string.

Oil well pumping systems are well known in the art. Such systems can be used to mechanically remove oil or other fluid from beneath the earth's surface, particularly when the natural pressure in an oil well has diminished. Various configurations of pumping systems have been developed in the past. One such configuration is the conventional rod pump. Generally, in the conventional rod pump configuration, an oil well pumping system can begin with an above-ground pumping unit, which can be commonly referred to as a "pumpjack." The pumping unit in the conventional rod pump configuration can create a reciprocating up and down pumping action that moves the oil or other substance being pumped out of the ground and into a flow line, from which the oil can then be taken to a storage tank or other such structure.
In the conventional rod pump configuration, below the ground, a shaft can be lined with piping known as "tubing." Into the tubing is inserted a string of sucker rods, which ultimately can be indirectly coupled at its north end to the above-ground pumping unit. The string of sucker rods can be indirectly coupled at its south end to a subsurface pump that is located at or near the fluid in the oil well. The subsurface pump can have a number of basic components, including a barrel and a plunger. The plunger can operate within the barrel, and the barrel, in turn, can be positioned within the tubing. It is common for the barrel to include a standing valve and the plunger to include a traveling valve. The north end of the plunger can be typically connected to a valve rod, which moves up and down to actuate the pump plunger. The valve rod can pass through a guide positioned at the north end of the barrel, which assists in centering the valve rod and thereby, the plunger. In addition, the guide can include openings through which the oil or other substance being pumped can exit the pump barrel and travel into the tubing.
An example of another known pumping system configuration is the conventional rotational rod pump. Such conventional rotational rod pumps can include, for example, the progressive cavity pump ("PCP"). Generally, with the conventional rotational rod pump configuration, a pumping system can begin with an above-ground pumping unit, which can be commonly referred to as a "power gear assembly," a "power head," and the like. The above-ground pumping unit in the conventional rotational rod pump configuration can create a rotational pumping action that rotates a string of rods, thereby moving the oil or other substance being pumped out of the ground and into a flow line, from which the oil can then be taken to a storage tank or other such structure. In contrast to the conventional rod pump configuration, with the conventional rotational rod pump configuration, the rods rotate, but are stationary as to vertical movement. One advantage to using the conventional rotational rod pump configuration (such as the PCP) is that it can be designed to handle downhole production recovery in well conditions in which high amounts of solids and/or high percentages of water are present.
As with the conventional rod pump configuration, in the conventional rotational rod pump configuration, below the ground, a shaft can be lined with piping known as "tubing." In the conventional rotational rod pump configuration, into the tubing is inserted a string of rotational drive rods, which ultimately can be indirectly coupled at its north end to the above-ground pumping unit. The string of rotational drive rods can be indirectly coupled at its south end to a subsurface pump that is located at or near the fluid in the oil well. In the conventional rotational rod pump configuration, the subsurface pump can utilize a helical design and can have a number of basic components, including a rotor and a stator. The rotor can be encased within and can operate within the stator, and the stator, in turn, can be positioned within the tubing. The north end of the rotor can be typically connected to the string of rotating rods, which rotate to actuate the pump rotor. The string of rotating rods can typically rotate in a clockwise direction at a set speed, which may include various speeds ranging from approximately 50 to 400 rpm, depending upon the viscosity of the fluid to be pumped. Higher viscosity fluids may be pumped at relatively slower speeds and lower viscosity fluids may be pumped at relatively higher speeds. The string of rotating rods can pass through a centralizer positioned at the north end of the stator, which assists in centering the rotating rods and, thereby, the rotor. In addition, the centralizer can include openings through which the oil or other substance being pumped can exit the pump stator and travel into the tubing.
There are a number of problems that can occur during oil pumping operations. Fluid that is pumped from the ground is generally impure, and includes solid impurities such as sand, pebbles, limestone, and other sediment and debris. Certain kinds of pumped fluids, such as heavy crude, tend to contain a relatively large amount of solids. Because of this, several disadvantages exist with both prior pump configurations utilizing valve rods and with prior pump configurations utilizing rotating rods.
For example, with respect to prior pump configurations utilizing valve rods, after the solids have been exhausted from the pump barrel and the pump has temporarily discontinued pumping operations, the solids can naturally begin to settle due to gravity. With prior art valve rods, the solids are able to reenter the pump barrel at this time. The solids can further settle on top of the pump section, filling upward into the tubing. This often results in excessive barrel wear upon restarting of the pump. Furthermore, it is possible that with the solids reentering the pump barrel, they can cause sticking of the pump i.e., seizing the plunger in the barrel.
Conventional pumps discharge fluid into the tubing allowing the fluid to move to the surface. On upstrokes, the well fluid through the pump can discharge to the top valve rod guide. When the plunger moves downward back into the barrel, the open cage atop the pump can allow fluid that was just discharged to reenter the barrel through the rod guide. The fluid discharged into the tubing from the pump can contain solids that concentrate themselves into the first two or three joints of tubing due to gravity. The fluid contained in this section of tubing can be concentrated and contain a higher percentage of solids than the fluid that was just discharged thus introducing additional solid impurities that create additional damage to both the barrel and plunger. Furthermore, the string of sucker rods reciprocating in an up and down movement can cause the rod to rub on the tubing typically made of steel. This can cause failure of the tubing resulting in leaking of fluid and thereby preventing fluid from reaching the surface.
With respect to prior pump configurations utilizing rotating rods, several disadvantages exist as well. For example, after the solids have been exhausted from the pump stator and the pump has temporarily discontinued pumping operations, the solids can naturally begin to settle due to gravity. With prior art rotating rods, the solids are able to reenter the pump stator and accumulate in the tubing at this time. The solids can further settle on top of the pump section, filling upward into the tubing. This often results in excessive stator and rotor wear upon restarting of the pump, or prohibiting pump startup due to accumulated solids in the tubing. Furthermore, it is possible that with the solids reentering the pump stator, they can cause sticking of the pump i.e., seizing the rotor in the stator.
Conventional rotational rod pumps discharge fluid into the tubing, allowing the fluid to move to the surface. On startup, the well fluid moving through the pump can discharge to the top rotating rod. When the rotor moves in the stator, the pump can allow fluid that was just discharged to reenter the stator through the rod centralizer. The fluid discharged into the tubing from the pump can contain solids that concentrate themselves into the first two or three joints of tubing due to gravity. The fluid contained in this section of tubing can be concentrated and contain a higher percentage of solids than the fluid that was just discharged thus introducing additional solid impurities that create additional damage to both the stator and rotor. Furthermore, the rotational movement of the string of rotating rods can cause the rods to rub on the tubing typically made of steel. This can cause failure of the tubing resulting in leaking of fluid and thereby preventing fluid from reaching the surface.
Other concerns with conventional rotational rod pump configurations include, for example, that the power supply can be occasionally interrupted or an over-torque situation can occur due to the presence of high amounts of solids. When this occurs, the pumped fluid containing the high amounts of solids stops moving upwardly through the tubing, which then allows the solids to settle back downward toward the pump. The solids can accumulate upwardly into the tubing, causing the tubing and tubing joints to become filled with solids. This can cause the rotational drive rods to seize, thereby prohibiting the pump from restarting once the power supply is restored or the over-torque situation is remedied.
Further, seizure of the rotational drive rods can also be caused due to the orientation of rod guides, which typically are permanently affixed to the rotational drive rods, with typically two to four rod guides being equally spaced on a rod. When the solids fall in and around the rod guides or the rod centralizer, the solids can anchor the affixed rod guides to the tubing wall due to the sheer volume of the solids, preventing the rotational drive rods from rotating upon restarting the pump. This causes an over-torque situation where the well will be shut down, with the operators eventually being required to pull both the rotational drive rods and the tubing from the well collectively, since the rotational drive rods and tubing are cemented together with solids.
Further still, with conventional rotational rod pump configurations, solids can settle in various areas within the pump assembly, including in the multiple cavities between the rotor and stator and on and around the area of each lobe. This, too, can cause sticking of the pump components.
A solution to the above-mentioned problems concerning prior pump configurations utilizing valve rods was disclosed in U.S. Pat. No. 9,163,483, which was issued to the inventor herein on Oct. 20, 2015. The rod guide and solids control assembly disclosed in U.S. Pat. No. 9,163,483 may be used with conventional rod pump configurations and, as a rod guide, moves up and down in the tubing and keeps the rods from contacting the tubing as the rods also move up and down in the tubing. However, the rod guide and solids control assembly disclosed in U.S. Pat. No. 9,163,483 does not center the rods in the tubing, since the rod guide has an outer diameter that is smaller than the interior diameter of the tubing, which allows for the rod guide to move from side to side within the tubing. Accordingly, the rod guide and solids control assembly disclosed in U.S. Pat. No. 9,163,483 may not be best-suited for use in a pump configuration utilizing rotating rods since in such a pump configuration, it is desirable to center the rotating rods (which, as noted above, are stationary as to vertical movement) in the tubing.
The present disclosure relates to a rod centralizer and solids control assembly for use with conventional rotational rod pumps for preventing or reducing the amount of solids from reentering back into the pump. It addresses the problems encountered in prior art pumping systems as well as provides other, related advantages.

Rod centralizer and solids control assembly


Methods and systems for processing a low resolution image via a low resolution error diffusion algorithm. A low resolution binary output pixel can be generated utilizing a general error diffusion algorithm. The low-resolution binary output pixel can be converted to a predetermined number of interpolated sub-pixel values and each interpolated sub-pixel values can be compared with a threshold in order to generate a scaled slow-scan output pixel utilizing the low resolution error diffusion algorithm. The low resolution error diffusion algorithm includes a highlight threshold adjustment module that adjusts level in order to prevent the scaled slow-scan output pixel from firing around the low resolution binary output pixel within a highlight region. A slow scan error with respect to the scaled slow-scan output pixel can be distributed and stored via error diffusion filter coefficients within an error buffer without additional memory.

A MFD (Multi-Function Device) is a rendering device or office machine which incorporates the functionality of multiple devices in a single apparatus or system so as to offer a smaller footprint in a home or small business setting, or in some cases, to provide centralized document management/distribution/production in the context of, for example, a large-office setting. A typical MFD may provide a combination of some or all of the following capabilities: printer, scanner, photocopier, fax machine, e-mail capability, and so forth. Networked MFDs (Multi-Function Devices) generally interact with an assemblage of varying rendering devices, client computers, servers, and other components that are connected to and communicate over a network.
Multi-function office reprographics devices utilize low-cost scanners in order to deliver a more economical solution. Unfortunately, such low-cost scanners do not provide a high-speed image processing throughput rate at a native image resolution, which is often expected by users and customers. For example, candidate low-cost scanners do not generate the desired 50 ppm processing rates when scanning at the native 600×600 spi resolution needed for the MFD products. Table 1 below summarizes an example benchmark study of applicable low-cost contact image sensors (CIS) for a competitive, low-cost MFD product under consideration. Note that such data is not considered a limiting feature of the disclosed embodiments, but is shown for exemplary purposes only. As indicated below, none of the candidate vendors met the 50 ppm product goal criteria at the 600×600 spi input scan resolution, whereas vendors "A" and "B" met the 50 ppm throughput rate but at a lower 600×300 spi resolution.
TABLE 1A4 Document MFDThroughput Speed (PPM)ProductResolutionVendor "A"Vendor "B"Vendor "C"Goal600 × 300 SPI50 PPM76 PPMNot Available50 PPM600 × 600 SPI25 PPM38 PPM20 PPM
Conventionally, error diffusion has been employed in a MFD copy-path to render a print-ready bitmap from a scanned monochrome/color image, since the error diffusion inherent properties provide favorable processing features without generating imaging/print artifacts. In general, processing an image via error diffusion generates an output image at the same input resolution, albeit with a lower bit-depth (i.e. 8 bpp→1 bpp). One alternative to processing the lower resolution image is to simply replicate/interpolate either an input contone image prior to rendering, or replicate a rendered binary output in order to generate the higher-resolution print-ready bitmap.
FIG. 1 represents a schematic diagram illustrating a snippet of 600×300 scan lines 10, with pixels 15 representing the lower-resolution scanned input image and the pixels 20 representing the interpolated or replicated scan lines. Unfortunately, either doubling the input 8 bpp contone image or 1 bpp binary output bitmap has throughput and image-quality disadvantages, respectively. Both techniques offer disadvantages with respect to the image-quality and/or reduced document throughput rates.
Based on the foregoing, it is believed that a need exists for an improved method and system for processing a low resolution image via a low resolution error diffusion algorithm, as will be described in greater detail herein.

Methods and systems for processing low resolution images via error diffusion


An integrated transport device for a wafer carrier includes: an evacuatable chamber for accommodating therein a wafer carrier having a front opening with a cover; a rotatable platform for placing the wafer carrier thereon in the chamber; and an opening/closing device for opening and closing the cover of the wafer carrier placed on the platform at a first position, wherein the platform rotates to set the wafer carrier at the first position and a second position for transporting a wafer to a wafer-handling chamber.

Field of the Invention
The present invention generally relates to an apparatus and method for transporting wafers between a wafer carrier and a process tool under vacuum, including an apparatus and method for opening and closing a FOUP (front opening unified pod) under vacuum.
Description of the Related Art
Recently, some platforms for handling semiconductor wafers have begun opening/closing a FOUP in a N2 atmosphere so as to reduce the number of particles adhering to wafers unloaded from and loaded to the FOUP. If the opening/closing of the FOUP is operated under vacuum, the particle issue is expected to be solved remarkably. However, the conventional opening/closing mechanism is designed for use in standard atmosphere, and is not operable under vacuum for the following reasons: The mainstay of semiconductor automation is shuttling products (e.g., silicon wafers or quartz photo-masks) between ultra-clean storage carriers (e.g., a FOUP) and a variety of process tools (e.g., processing, measurement, or testing chambers) through an equipment front end module (EFEM) such as a minienvironment. A FOUP is installed in a load port which is gas-tightly attached to a minienvironment via an interface. After the FOUP is connected to the minienvironment, a door of the FOUP facing the interior of the minienvironment opens to the interior by unlatching the door (releasing a lock of the door) and moving the door away from the FOUP and then moving it downward to fully open the FOUP. This process is illustrated in FIG. 1. FIG. 1 is a schematic representation of a conventional load port with a FOUP when a door of the FOUP is opened (the structure of a minienvironment is not shown). An opening/closing device (now shown) releases a door lock of a FOUP 1 installed in a load port 2 and holds a door 3, and then moves the door 3 downward to secure a space for robotic operation wherein the door is held in a support 4. In the above, the opening/closing device uses a motor for unlatching and moving the door. Since the moving parts including the motor are provided with grease which tends to evaporate under vacuum, the moving parts need to be sealed from the vacuum environment. However, the minienvironment uses standard atmosphere, and thus, it is difficult to completely seal the moving parts including the motor in its entirety while moving the door with complex operating mechanisms. Further, since the door is moved downward to open the FOUP, a significant amount of space is required for the vertical movement of the door. In this disclosure, the "door" may also be referred to as "cover".
An object of the present invention is to resolve at least one of the above-addressed problems.
Any discussion of problems and solutions in relation to the related art has been included in this disclosure solely for the purposes of providing a context for the present invention, and should not be taken as an admission that any or all of the discussion was known at the time the invention was made.

Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum


A computer-implemented method for sharing user activity information comprises: receiving a user action history generated in one service among a first service and a second service through an application executed in an electronic device; mapping and storing account information at the first service, account information at the second service, and the user action history with respect to a user of the electronic device; and transmitting, to the application, information on the user action history or an event corresponding to the user action history, such that the event corresponding to the user action history is provided to the user through another service among the first service and the second service.

With developments in network and computer technology, an online game is currently in a field that occupies a large portion of online cultural industry. The development of the online game causes users to desire various genres of online games. In response thereto, various genres of online games are currently being serviced. For example, a system and method for providing an online game using a mobile terminal is disclosed in Korean Patent Laid-Open Publication No. 10-2013-0089774, published on Aug. 13, 2013.
A community service provides an online space in which users directly generate and share information and gather to perform actions. Portal web service providers, for example, NAVER and DAUM, allow a user to generate a bulletin board and/or a chatroom that fits a theme desired by the user and accordingly enable information and opinions to be exchanged between specific groups through the bulletin board and/or the chatroom.
In the recent times, a variety of event information is provided to a game user and a community service for enhancing a sense of belongingness and/or a sense of fellowship is provided while sharing information between game users, through the online game.
However, when a game company operates a game and a community, a game user action and a community user action are separately managed in the related art. Accordingly, interconnection therebetween (e.g., between the game and the community, and/or between the game user action and the community user action) is not provided in the related art, and hence, details relating to the game user action and the community user action may not be shared between a game and a community according to the related art.

Method and system for sharing user activity information


A method is disclosed in which differing metal layers are sequentially deposited on silicon-containing regions so that the type and thickness of the metal layers may be adapted to specific characteristics of the underlying silicon-containing regions. Subsequently, a heat treatment is performed to convert the metals into metal silicides so as to improve the electrical conductivity of the silicon-containing regions. In this way, silicide portions may be formed that are individually adapted to specific silicon-containing regions so that device performance of individual semiconductor elements or the overall performance of a plurality of semiconductor elements may be significantly improved. Moreover, a semiconductor device is disclosed comprising at least two silicon-containing regions having formed therein differing silicide portions, wherein at least one silicide portion comprises a noble metal.

1. Field of the Invention
Generally, the present invention relates to the field of fabrication of integrated circuits, and, more particularly, to semiconductor devices having metal-silicide portions on semiconductor regions to reduce the sheet resistance of the semiconductor regions. Furthermore, the present invention relates to a method of manufacturing these semiconductor devices.
2. Description of the Related Art
In modem ultra-high density integrated circuits, device features are steadily decreasing to enhance device performance and functionality. Shrinking the feature sizes, however, entails certain problems that may partially offset the advantages obtained by the reduced feature sizes. Generally, reducing the feature sizes of, for example, a transistor element, leads to a decreased channel resistance in the transistor element and thus results in a higher drive current capability and enhanced switching speed of the transistor. In decreasing the features sizes of these transistor elements, however, the increasing electrical resistance of conductive lines and contact regions, i.e., of regions that provide electrical contact to the periphery of the transistor element, becomes a dominant issue since the cross-sectional area of these lines and regions decreases with decreasing feature sizes. The cross-sectional area, however, determines, in combination with the characteristics of the material comprising the conductive lines and contact regions, the resistance of the respective line or contact region.
The above problems may be exemplified for a typical critical feature size in this respect, also referred to as a critical dimension (CD), such as the extension of the channel of a field effect transistor that forms below a gate electrode between a source region and a drain region of the transistor. Reducing this extension of the channel, commonly referred to as channel length, may significantly improve device performance with respect to fall and rise times of the transistor element due to the smaller capacitance between the gate electrode and the channel and due to the decreased resistance of the shorter channel. Shrinking of the channel length, however, also entails the reduction in size of any conductive lines, such as the gate electrode of the field effect transistor, which is commonly formed of polysilicon, and the contact regions that allow electrical contact to the drain and source regions of the transistor, so that consequently the available cross-section for charge carrier transportation is reduced. As a result, the conductive lines and contact regions exhibit a higher resistance unless the reduced cross-section is compensated by improving the electrical characteristics of the material forming the lines and contact regions, such as the gate electrode, and the drain and source contact regions.
It is thus of particular importance to improve the characteristics of conductive regions that are substantially comprised of semiconductor material such as silicon. For instance, in modem integrated circuits, the individual semiconductor devices, such as field effect transistors, capacitors and the like, are primarily based on silicon, wherein the individual devices are connected by silicon lines and metal lines. While the resistivity of the metal lines may be improved by replacing the commonly used aluminium by, for example, copper, process engineers are confronted with a challenging task when an improvement in the electrical characteristics of silicon-containing semiconductor lines and semiconductor contact regions is required.
With reference to FIGS. 1a and 1b, an exemplary process for manufacturing an integrated circuit containing, for example, a plurality of MOS transistors, will now be described in order to illustrate the problems involved in improving the electrical characteristics of silicon-containing semiconductor regions in more detail.
In FIG. 1a, a semiconductor structure 100 includes a substrate 101, for example, a silicon substrate, in which a first semiconductor element 110 and a second semiconductor element 130 are formed. The first semiconductor element 110 may, as depicted in FIG. 1a, represent a field effect transistor of a first conductivity type, such as an n-channel transistor, and the second semiconductor element 130 may represent a field effect transistor of a second conductivity type, such as a p-channel transistor. The first semiconductor element 110 comprises shallow trench isolations (STI) 113 that are formed of an insulated material, such as silicon dioxide, and that define an active region 112 in the substrate 101. A gate electrode 115 is formed over a gate insulation layer 118 that separates the gate electrode 115 from the active region 112. Spacer elements 116 made of, for example, silicon dioxide or silicon nitride, are located at the sidewalls of the gate electrode 115. In the active region 112, source and drain regions 114 are formed and exhibit an appropriate dopant profile required to connect to a conductive channel that builds up between the drain and the source region during operation of the first semiconductor element 110.
The second semiconductor element 130 comprises substantially the same parts as the first semiconductor element 110 and corresponding parts are denoted by the same reference numerals except for a "leading 13" instead of a "leading 11." As previously noted, the second semiconductor element 130 may differ from the first semiconductor element 110 in, for example, type of conductivity, that is, type and concentration of dopants provided in the active regions 112 and 132, lateral extension of the gate electrode, also referred to as gate length, cross-sectional area, and the like. Moreover, it should be noted that although the first and second semiconductor elements 110 and 130 in FIGS. 1a and 1b are depicted as transistor elements, the first and second semiconductor elements 110 and 130 may represent any silicon-containing region that is used for charge carrier transportation. For example, relatively long polysilicon lines may connect semiconductor elements on different locations of a single chip area and these polysilicon lines may be regarded as first and second semiconductor elements 110, 130, the electrical characteristics of which are to be improved so as to obtain an enhanced device performance with respect to signal propagation delay.
Again referring to FIG. 1a, in particular the gate length of the first and second semiconductor elements 110 and 130 determines the channel length of these devices and, therefore, as previously pointed out, significantly affects the electrical characteristics of the first and second semiconductor elements 110 and 130, whereby a reduced gate length will result in an increased resistance of the gate electrodes 115, 135 owing to the reduction of the cross-sectional area of the gate electrodes 115, 135.
A typical process flow for forming the semiconductor structure 100 may comprise the following steps. After formation of the shallow trench isolations 113 and 133 by well-known photolithography techniques, implantation steps are performed to create a required dopant concentration in the active regions 112 and 132. Subsequently, the gate insulation layers 118 and 138 are formed according to design requirements. Thereafter, the gate electrodes 115 and 135 are formed by patterning, for instance a polysilicon layer, by means of sophisticated photolithography and trim etch methods. Then, a further implantation step for forming so-called source and drain extensions within the source and drain region 114 and 134 is performed and the spacer elements 116 and 126 are formed by deposition and anisotropic etching techniques. The spacer elements 116 and 126 are used as an implantation mask for a subsequent implantation step in which dopant particles are implanted into the source and drain regions 114 and 134 to create the required high dopant concentrations in those regions. It is to be noted that the dopant concentration varies in FIG. 1a in the horizontal direction, i.e., in the length direction of the gate electrodes 115, 135, as well as in the vertical direction, which will hereinafter be referred to as depth direction. Although the dopant profile of the source and drain regions 114 and 134 is depicted as a region having a sharp boundary, in reality the dopant profile varies continuously due to the nature of the implantation process and the subsequent annealing steps that are performed for activating the implanted atoms and for curing the crystalline damage caused by the implantation step. Usually, the dopant profile has to be selected in conformity with other parameters of the first and second semiconductor elements 110 and 130. For example, a short gate length, and thus a short channel length, requires a "shallow" dopant profile in order to avoid the so-called "short channel effect." Accordingly, the peak concentration in the depth direction may be located a few hundred nanometers below the surface of the drain and source regions 114 and 134. Moreover, p-channel transistors may require a different dopant profile than an n-channel transistor element.
As previously noted, the cross-section of the gate electrodes 115 and 135, which may be considered as polysilicon lines, as well as the contact area on top of the source and drain regions 114 and 134, significantly influence the electrical characteristics of the first and second semiconductor elements 110 and 130. Since, generally, these device areas primarily contain a semiconductor material such as silicon in crystalline, polycrystalline and amorphous form, these areas, although they usually include dopants, exhibit a relatively high resistance compared to, for example, a metal line. Consequently, these areas are treated to enhance the conductivity of these regions, thereby improving the overall performance of the devices.
To this end, according to FIG. 1a, a metal layer 140 is deposited over the first and second semiconductor elements 110 and 130. Typically, the metal layer 140 comprises titanium, cobalt or other refractory metals. Subsequently, a first heat treatment, for example, a rapid thermal annealing, is carried out to initiate a chemical reaction between the silicon in the source and drain regions 114, 134, the gate electrodes 115, 135 and the metal contained in the metal layer 140. If, for example, the metal layer 140 substantially comprises cobalt, an average temperature of the first heat treatment may be set to about 400° C. to create a meta-stable cobalt silicon compound exhibiting a relatively high resistivity. Since the silicon contained in the spacer elements 116, 136 and the shallow trench isolations 113, 133 is chemically bound in the form of dioxide or nitride, the metal of the metal layer 140 does not substantially react with the material of the spacer element 115, 136 and the shallow trench isolations 113, 133. After the first heat treatment, the material of the metal layer 140 that has not reacted with the underlying material is removed by, for example, a selective wet etching process. Thereafter, a second heat treatment is performed, for example, a second rapid annealing step with a temperature higher than in the first annealing step, to convert the meta-stable metal-silicon compound into a metal silicide. In the above example, when cobalt is used, a cobalt disilicide is formed in the second annealing step. The metal silicide shows a significantly lower resistance than the meta-stable metal-silicon compound as well as a significantly lower resistance, by a factor of about 5–10, than the sheet resistance of the doped polysilicon.
FIG. 1b schematically shows the finally obtained first and second semiconductor elements 110 and 130 having formed on the respective source and drain regions 114, 134 and the gate electrodes 115, 135 a metal suicide region 141.
Although the metal silicide regions 141 significantly improve the electrical characteristics of the first and second semiconductor elements 110 and 130, there is still room for improvement since, in the conventional process flow, the metal silicide regions 141 have to be formed so as to meet the requirements of the first semiconductor element 110 and the second semiconductor element 130, so that optimizing the characteristics of the silicide regions 141 of the first semiconductor element 110 compromises the effect of the silicide regions 141 of the second semiconductor element 130, and vice verse.
It is thus desirable to have a semiconductor and a method of forming the same in which the characteristics of the conductive semiconductor regions may be individually optimized for different semiconductor elements.
The present invention is directed to a method that may solve, or at least reduce, some or all of the aforementioned problems.

Semiconductor device having different metal silicide portions and method for fabricating the semiconductor device


A wide-stripe diode-laser includes a lower cladding region, a lower waveguide region, an active region, an upper waveguide region, and an upper cladding region all comprising semiconductor layers epitaxially grown on a semiconductor substrate. An elongated rectangular electrode on the upper cladding layer defines a stripe or pumped section. Adjacent the electrode is an unpumped section in which at least the quantum-well layer has been treated to cause the active region to be disordered. In this unpumped section, at least one area of the area is etched to a depth equal to or less than the thickness of the cladding region. The etched area provides a diverging lens effect in the waveguide region. The diverging lens effect expands the fundamental mode of the laser in the stripe to a width sufficient to improve single mode performance.

Referring now to the drawings, wherein like features are designated by like reference numerals, FIG. 1 schematically illustrates one common type of prior-art, edge-emitting, separate-confinement-heterostructure, diode-laser 20 formed by epitaxially growing a series of semiconductor layers on an n-doped, semiconductor substrate 22. A lower electrical confinement or cladding region 24 of the diode-laser includes one or more n-doped semiconductor layers. Surmounting the lower cladding region is a lower optical confinement or waveguide region 26, formed by one or more undoped semiconductor layers. Surmounting the lower waveguide region is a so-called active region 28 including at least one undoped, active or quantum-well layer. If there is more than one quantum well layer, the quantum-well layers are separated by barrier layers (not shown). The active region is surmounted by an upper waveguide region 30, similar to lower waveguide region 24. Upper waveguide region 30 is surmounted in turn by an upper cladding region 32 including at least one p-doped semiconductor layer.
Typical Layer or Region Thickness
An elongated, rectangular electrode 34 is bonded to upper cladding region 32. Electrode 34 extends the entire length (L) of the diode-laser. The width W and length L of the electrode define the width of the diode-laser. The electrode and the region under the electrode are often referred to by practitioners of the art to as a "stripe".
The diode-laser is energized (electrically pumped) by passing current through the layers between electrode 34 and substrate 22. Mirrors (not shown) on the ends (facets) of the laser form a laser resonant cavity. Energizing the laser generates electrical carriers that recombine in the active region to provide laser radiation that circulates in the resonant cavity. Laser radiation is emitted from the diode-laser in a general direction along a longitudinal (Z) axis of the laser. The radiation is emitted as a diverging beam (not shown) having a greater divergence in the Y-axis than in the X-axis. For this reason the Y-axis and X-axis are respectively referred to as the fast and slow axes by practitioners of the art.
Laser radiation circulating in the laser cavity is confined in the thickness (Y-axis) direction of the layers by reflection from interfaces between the waveguide regions and the cladding regions adjacent thereto. The circulating radiation is confined in the width (X-axis) direction, among other factors, by the width of the electrode, as it is only in this width that there is optical gain.
This type of diode-laser typically has a stripe-length between about 1.0 and 1.5 millimeters (mm), and emits radiation from an emitting aperture having a height H of about 1.0 micrometer (μm) and a width W between about 4.0 and 200 μm. The emitting aperture height H includes the combined thickness of the upper and lower waveguide regions 30 and 26 and the active region 28. Width W is usually referred to in the art as the emitter-width or stripe-width. A diode-laser having an emitter-width greater than about 30 μm is often referred to as a wide-emitter diode-laser.
Generally, for a given length of a diode-laser, the greater the stripe (emitter) width, the greater will be the potential output power of the diode-laser. However, the wider the stripe width, the greater is the number of transverse modes at which the laser delivers output radiation. The greater the number of transverse modes, the poorer is the quality of the output beam of the diode-laser. While a multiple transverse mode output beam is acceptable for diode-laser applications such a heating and surface treatment, it is often not suitable for applications in which the output beam must be focused into a small spot, for example in end-pumping a fiber laser. There is a need for a wide-stripe diode-laser that operates in a single transverse mode.


An image capturing system can provide an image having the desirable composition captured by an image capturing apparatus to the user is provided.

1. Field of the Invention
The present invention relates to an image capturing system and an image capturing method.
2. Related Art
Generally, as a system for capturing images of users using the camera installed in such a theme park, a system in which images are captured by a camera according to an instruction from a shutter device held by the user is known as described in Japanese Patent Application Publication No. 2003-78804, for example. In the system, an alarm tone is generated from the shutter device held by the user when the user arrived at around the snapping spot of the camera installed in such as a flower garden. After perceiving the alarm tone, the user pushes the shutter button of the shutter device to capture an image using the camera. Thereby the user can capture the image using the camera at the desired shutter timing.
However, in such system, a user can not easily recognize the snapping spot until the user arrives at around the snapping spot. Additionally, when a user wants to take a picture against a background of the whole notable building in a theme park, the user can not correctly know whether the user is on the position allowing the user to capture an image with the best composition in the snapping point, for example. Particularly, when it is intended to capture the image of a plurality of persons, each person can not easily know where they should stand to be photographed at the best position. Therefore, the notable building may be hidden by the user depending on the user's position. Then, the user cannot easily acquire the image with the desired composition.

Image capturing system and image capturing method

Abstract: The image capturing system includes: an image capturing unit; a composition storage section for storing a plurality of compositions of the image captured by the image capturing unit; plurality of position indication units for indicating a position at which a main subject should be located in order to capture an image having the composition stored in the composition storage section; and a composition presentation section for presenting the composition of the image captured by the image capturing unit for the plurality of position indication units when the main subject is located at the position indicated by the position indication unit. The image capturing unit is fixedly installed in a predetermined position. The plurality of position indication units have a plurality of position indication mark units drawn on the positions at which the main subject should be located in each of the plurality of compositions stored in the composition storage section.


A self-expanding stent assembly consisting of one or more Z-stents connected to one another and covered by a flexible sleeve, which can be made from either nylon, plastic or another suitable material. The stents are formed of stainless steel wire arranged in a closed zig-zag configuration which includes an endless series of struts that are joined by an equal number of joints. The stent assembly is compressible into a reduced diameter size for insertion into, and possible removal from, a body passageway. After being properly positioned within a body passageway, the stent assembly is allowed to expand to its larger diameter shape, wherein the sleeve is pressed against the walls of the passageway by the stents. One application of the invention includes dilating a biliary duct which has been occluded by a tumorous growth. The advantage being that the sleeve prevents the tumor from growing between the gaps created by the stent which would otherwise restenose the passageway. Another intended application is to repair aneurysms. In this configuration, the stents are postioned on either side of an aneurysm, and the sleeve forms and artificial arterial wall which spans the aneurysm.

1. Field of the Invention
This invention relates generally to vascular stents for use in preventing restenosis of passageways and ducts in the body and to repair aneurysms percutaneously.
2. Description of the Prior Art
It is desirable that means be provided which will prevent the restenosis of a passage or duct due to the invasion of tissue between the wire struts of the stent. Such a situation often occurs where a tumor has invaded a biliary tract. In those cases, a wire stent tends to provide only temporary relief from occlusion because the tumor often tends to grow between the wire struts, eventually resulting in a restenosed passageway. Gianturco U.S. Pat. No. 4,580,568 exemplifies such conventional wire stents. While Gianturco '568 discloses a wire stent to reduce flow defects in arteries, ducts and the like within the body, it does not solve the problem of tissue growth between the wire struts of the stent. Thus, conventional wire stents do not necessarily provide an acceptable long-term solution in the face of malignant tissue growth, nor do such stents provide a means to repair aneurysms percutaneously.
Reference is also made to U.S. patent application Ser. No. 422,606, also by Gianturco. That application teaches a stent structure and method which permits a stent to be easily retrieved from the body percutaneously, some time after being successfully implanted. In many instances, such an advantage would be suitable to the present invention.
There remains a need for a percutaneous stent assembly that is self-expanding, yet is capable of preventing or reducing restenosis. There is also need for a percutaneous stent assembly which is capable of repairing aneurysms.


A removable lift for a hand truck for providing lifting functions to a traditional hand truck. The removable lift includes a motor for causing a toe plate to move up or down. The motor and moving toe plate may be operated using a control panel.

Hand carts, dollies, or hand trucks provide an efficient way for a single individual to move a heavy load by sliding it onto a flat ledge and using leverage to balance the load over a pair of wheels. This enables the load to be rolled, rather than lifted and carried, to a selected location. Hand trucks generally consist of an elongated open framework with wheels at the base and a transverse, flat toe plate. In the upright position, the toe plate rests on the floor and can be slid under the load and used to tip the load backward onto the frame. The hand truck is rolled in a tipped position, with the load balanced between the toe plate and the open framework. Hand trucks are unloaded by lifting or pushing cargo off of the toe plate. Hand carts have been used within many different industries for the transportation of many diverse types of items.
Loads placed on hand trucks are often heavy. Lifting these heavy loads may result in a user dropping the loads or not being able to lift the load at all. Additionally, a user lifting a heavy load may risk injury.
Thus, there is a need for a universal platform or toe plate that can be used on hand trucks available from a wide variety of manufacturers, that can be easily installed and removed by a user without the need for tools and fasteners, and that can lift heavy loads.