A graphite body comprises aligned graphite flakes bonded with a binder, in which the graphite has an average particle size of >200 μm.

This invention relates to carbon materials. The invention particularly relates to thermally anisotropic carbon materials.
Among their many applications, carbon materials are used for heat management purposes. This is particularly critical in electronics applications. More compact and sophisticated electronic devices and advances in semiconductor technology have resulted in rising transistor density and switching speed of microprocessors. This has been accompanied by drastic increases in heat production.
In response to this challenge, commercial companies are focusing on developing high performance, low cost, compact, and reliable schemes to handle these very large thermal loads.
The technologies proposed to date rely on the concepts of heat spreaders and heat sinks and various combinations of spreaders and sinks.
A heat spreader is an article that spreads heat quickly. A heat spreader requires high thermal conductivity and low heat capacity.
A heat sink is an article that absorbs heat quickly. It stores heat so it needs high thermal conductivity and high heat capacity.
Conventionally in electronics, heat is spread out by a heat spreader to a heat sink and then removed from the heat sink to the surroundings either by natural convection or by forced flow of a coolant (e.g. fan cooling). For more demanding applications other solutions such as heat pipes or liquid cooled systems may be required.
A carbon based material that has been proposed for use as a heat spreader is diamond. Diamond has the highest known thermal conductivity of any material. However it is currently expensive to make. Diamond is also isotropic in nature, the thermal conductivity in any one direction being the same as in any other direction. This means that as well as spreading heat, a diamond heat spreader allows heat to pass through it to the side remote the source of heat. This can be disadvantageous in applications where components are in close proximity.
A thermally anisotropic carbon material is graphite. The crystal structure of graphite comprises layers within which there is strong bonding, with weak bonding between the layers. Additionally, within each layer there are delocalised electrons. This structure leads to a high degree of anisotropy, with thermal (and electrical) conductivity within the plane being very much higher than thermal (and electrical) conductivity through the plane.
To exploit this anisotropy, several proposals have been made for graphite based heat spreaders and sinks, for example among recent proposals are:—                U.S. Pat. No. 6,746,768 which discloses a thermal interface material comprising a flexible graphite sheet containing oil which reduces thermal resistance when attached to a component.        U.S. Pat. No. 6,771,502 which discloses a finned heat sink constructed from the above resin-impregnated graphite sheets.        U.S. Pat. No. 6,758,263 which discloses an anisotropic laminated graphite heat sink made of the above resin-impregnated graphite sheets which has a cavity into which is inserted a thermally conductive material. The heat from a heat source can be conducted via the core and into the thickness of the heat sink and then out across the plane of the heat sink.        U.S. Pat. No. 6,841,250 which discloses heat sink designs using such laminated graphite sheets for conducting heat away from an electronic component and dissipating it through the heat sink.        U.S. Pat. No. 6,777,086 which discloses resin impregnated exfoliated graphite sheets which are resin-impregnated (5-35% wt) and calendered to 0.35-0.50 mm.        U.S. Pat. No. 6,503,626 which discloses that such resin impregnated graphite sheets may be comminuted, pressed & cured to form a block which can then be machined into a desired finned shape.        U.S. Pat. No. 6,844,054 which discloses resin impregnated carbon fibre heat sinks of various geometric designs (cones, pyramids, domes, etc.).        U.S. Pat. No. 6,119,573 which discloses the use of carbon fibre material as a thermally conductive interface between a missile housing and an electronics package to give a low weight high thermal conductivity heat sink.        U.S. Pat. No. 5,837,081 which discloses a composite produced from a mat of graphitised (to 2800° C.) vapour grown fibre (i.e. highly oriented pyrolytic graphite—HOPG) which is densified by chemical vapour deposition (CVD) of pyrolytic carbon.        U.S. Pat. No. 6,514,616 which proposes the use of highly oriented pyrolytic graphite encapsulated in polyimide, epoxy or other polymer.        US 2006/0029805 [published after the earliest priority date of the present application] discloses the idea of hot pressing graphites with a mesophase pitch or phenolic resin as a binder and heat treating to graphitise the binder. US 2006/0029805 discloses that pressing preferably aligns the graphite perpendicular to the moulding direction and that such composite materials have high thermal conductivities (paragraph [0040] shows thermal conductivities of 204.4 W/mK and 76.8 W/mK in the in-plane and through-plane directions for a mesophase pitch binder material). US 2006/0029805 also discloses that mesophase pitch binder materials have a higher thermal conductivity than resin binder materials.
Other patents using graphite's anisotropic thermal conductivity for thermal management include U.S. Pat. No. 4,878,152, U.S. Pat. No. 5,542,471, U.S. Pat. No. 6,208,513, U.S. Pat. No. 5,523,260, U.S. Pat. No. 5,766,765, U.S. Pat. No. 6,027,807, U.S. Pat. No. 6,131,651.
Despite this widespread use of graphite the performance and cost of graphite based materials varies widely. This is because the degree of anisotropy depends upon the degree of orientation of the graphite. To obtain a highly oriented graphite is difficult.
In their patent application WO02/090291 the applicants proposed a method of forming a graphite material comprising the steps of:—
a) forming under high shear a mouldable composition comprising:—
                i) graphite powder; and        ii) a binder; and        iii) a fluid carrierb) working said mouldable composition under high shear to form an extruded shapec) forming bodies from said shape;d) heat treating said bodies to stabilise the structure; ande) machining the bodies to form features in their surfaces.
The high shear working of the compositions could be by rolling.
WO02/090291 concentrated on aqueous binders but did mention the possibility of using pitch based binders. The purpose behind WO02/090291 was to provide a highly graphitic body without the need for a high temperature graphitisation step
Pitch comes in many forms. One such form is mesophase pitch (sometimes called liquid crystal pitch). Mesophase pitch is a partially pyrolysed material containing highly linked aromatic groups and is in effect a pitch part way through conversion to graphite. Continued pyrolysis results in graphitisation. Mesophase pitch is sometimes used as a matrix material in carbon-carbon composites to bind carbon fibres.

Abstract: Methods of forming such highly oriented graphite material include:—                a) forming a mixture of a mesophase pitch with a graphite powder;        b) rolling the mixture to align the graphite powder and to form a body of graphite and pitch;        c) carbonising the body; and optionally        d) graphitising the body.

Abstract: Pressing rather than rolling may be employed.

Abstract: Such graphite bodies have high thermal conductivity and anisotropy and may be used for thermal management.


A short power signal path integrated circuit package placed on a printed circuit (PC) board and having a first dielectric layer. On top of this first dielectric layer a metallized die pad and a first metal ring, surrounding this metallized die pad, are positioned. The metallized die pad and the first metal ring electrically couple to the PC board to receive respectively a first power supply signal and a second power supply signal. An integrated circuit die is then affixed to the metallized die pad. This integrated circuit die has a first power supply signal bond pad and a second power supply signal bond pad, which respectively are coupled to the metallized die pad and the first metal ring. Consequently, the metallized die pad and the first metal ring operate as a first power supply plane and a second power supply plane coupling the first and the second power supply signals coming from the PC board to the first and the second power supply signal bond pads on the integrated circuit die.

1. Field of the Invention
The present invention relates to the field of high performance integrated circuit packaging.
2. Art Background
Traditionally, microprocessors have been packaged in ceramic pin grid array packages because of electrical and thermal performance requirements. More specifically, the high instruction execution speed of microprocessors places two limitations on the design of packaging for microprocessors. First, since power consumption is a function of the instruction execution speed and since microprocessors operate at high instruction execution speeds, the conservation of energy is one limitation placed on the design of packaging for microprocessors. Second, the high instruction execution speed of microprocessors requires the packaging to minimize the time for removing and supplying the transient power supply currents (e.g., the transient ground and the transient V.sub.CC supply currents) to the microprocessor die, in order to allow the circuit nodes to charge and discharge as quickly as possible.
The conservation of energy and time constraints can both be satisfied by providing the shortest paths from the printed circuit (PC) board to the die for the power supply signals (e.g. the ground supply signal and the V.sub.CC supply signal). In other words, energy is conserved by minimizing the distance that the power supply signals have to traverse from the PC board to the die, because the power supply signals encounter less obstructions (i.e., resistance and inductance) in the path. Furthermore, the time for supplying and removing the transient power supply currents from the PC board to the die is also minimized by minimizing the distance that the power supply signals have to traverse from the PC board to the die.
In the past, microprocessors have been packaged mostly in ceramic pin grid array packages, because the prior art solutions for shortening the power supply signal paths (from the PC board to the die) often cannot be successfully implemented in other types of packaging. One prior art method for shortening the power signal paths is the placement of capacitive electrical planes within the package. These capacitive electrical planes (which are also called thin layer capacitors) are connected to the power supply signals, and thus provide a local on-chip power source that can be quickly accessed by the die.
Unfortunately, capacitive electrical planes can only be implemented in a few types of materials. The feasibility of implementing capacitive electrical planes depends on the minimum separation distance that can be achieved between each power and ground plane and the dielectric constant of the package. Thus, since ceramic packages have high dielectric constants and provide for small separation distances, capacitive electrical planes can be implemented in ceramic packages. However, as mentioned above, capacitive electrical planes cannot be implemented in all types of packages. For example, the cheaper plastic package technology cannot use capacitive electrical planes to shorten the power supply signal paths, because plastic packages have a low dielectric constant and cannot provide small separation distances between adjacent electrical planes.
Another prior art solution for shortening the paths of the power supply signals is to mount chip capacitors on the package, and to couple these capacitors to the power supply signals so that these capacitors act as local sources of power. However, as the chip capacitors are expensive, this prior art solution increases the processing cost of the microprocessors.
Consequently, it would be desirable to provide a packaging method and apparatus for microprocessors that would cost effectively conserve energy and time in delivering the power supply signals from the PC board to the die. More specifically, a packaging method and apparatus for microprocessors is needed that would provide the shortest power signal paths from the PC board to the die without the use of capacitive electrical planes (which cannot be implemented in all types of packaging) and without the use of chip capacitors (which are expensive).

Short power signal path integrated circuit package


A method for fabricating a semiconductor device includes forming a vertical field-effect transistor (FET) device including a plurality of first fin structures in a vertical FET device area of a substrate, and forming an input/output (IO) FET device including at least two second fin structures in an IO FET device area of the substrate. The at least two fin structures are connected by a channel having a length determined based on at least one voltage for implementing the IO FET device. Forming the vertical FET and IO FET devices includes selectively exposing a portion of the IO FET device area by selectively removing a portion of a first spacer formed on the substrate in the IO FET device area.

The present invention generally relates to semiconductor devices, and more particularly to vertical field-effect transistor (FET) devices.
Fin complementary metal-oxide-semiconductor (CMOS) integration has been a building block in modern CMOS technology. Vertical FETs have been devised as a way to reduce contact poly pitch (CPP) to decrease unit cell size and increase efficiency by orienting current flow vertically. Vertical FETs reduce or eliminate parasitic capacitance and conductance from a substrate. Further, since the ohmic contacts and the channels are aligned vertically, current density per unit of surface area in a vertical FET is much higher than in a planar FET.

This patent is subject to a terminal disclaimer.

Integration of input/output device in vertical field-effect transistor technology

INTERNATIONAL BUSINESS MACHINES CORPORATION


A light source drive device includes a first current source which provides a predetermined current to a light source corresponding to a predetermined light output, and a second current source which provides an overshoot current to the light source synchronized with the predetermined current. A processor is configured to set an overshoot time during which the overshoot current is provided to the light source. Further, an overshoot current is set which is applied to the light source. The overshoot time is set so that the overshoot time based on the rising of the predetermined current to when a light emission of the light source is detected.

1. Field of the Invention
An embodiment of the present invention relates to a light source drive device, an optical scanning device and an image forming apparatus.
2. Description of the Related Art
Technology is known in which a higher frequency component of a transmission signal is overshot based on an attenuation property of a transmission line (pre-emphasis). Japanese laid open 2010-068033 describes the pre-emphasis technology.
When a drive current, which is provided with a light source, is overshot to improve a light output response, the light source may be damaged by being provided with the overshot drive current.

Light source drive device, optical scanning device and image forming apparatus


A digital camera simulates the use of fill flash. The camera takes a series of photographs of a scene at various focus distances. The photographs are stored, along with their corresponding focus distances. The photographs are analyzed to determine the distance to objects at various locations of the scene. Regions of a final photograph are selectively adjusted in brightness based on the distance information to simulate the effect that would have resulted had fill flash been used.

Photographers often use a flash or strobe light to achieve desired effects in their photographs. Many modem cameras include a built-in electronic flash lamp so that the use of flash is convenient. Sometimes, the flash is used to provide the primary illumination of a scene when insufficient light is available from other sources. The light that is available from other sources is often called ambient light.
In some cases, there may be sufficient ambient light for exposing a photograph without the use of a flash, but the distribution of the ambient light is such that the resulting photograph is disappointing. This is often the case with brightly backlit subjects such as a person in a relatively dark room with a sunlit window in the background. The camera may adjust its exposure settings to the average brightness of the scene, thereby severely underexposing the person.
A technique for improving photographs in this situation is the use of fill flash. Fill flash is the use of a flash or strobe light, usually built into or mounted on the camera, to add light to a scene that may have enough ambient light for a photograph, but which can be improved by the use of the flash. In the above example, the camera flash can boost the illumination of the person but will have a negligible effect on the brightness of the sunlit objects outside the window. In this way, the relative illumination of the person and the outdoor objects are brought more closely together, allowing for better relative exposure of the various parts of the scene.
Fill flash may be used for other purposes as well. Fill flash can add highlight emphasis to foreground subjects. It can also be used to soften harsh shadows that may be present, for example when people being photographed are lit by strong near-overhead sunlight.
While fill flash can improve the quality of photographs in some situations, it has several disadvantages. In some situations, such as in museums, flash photography may not be allowed. In other circumstances, such as at a wedding or formal dinner, flash photography may be considered impolite.
Fill flash may also create some undesirable shadow effects. For example, when a person is photographed using flash, one side of the person may be limned in the photograph by a harsh and objectionable shadow falling on objects just behind the person.
Electronic flash also consumes significant electrical energy. Using the camera flash may rapidly deplete the batteries powering the camera, thereby limiting the useful life of the camera between battery replacements or rechargings.
Electronic flash can also produce an undesirable effect called "redeye" when the light from the flash is reflected back to the camera from the retina of the subject's eye. Methods of reducing the "redeye" effect such as using a preflash to constrict the iris of the subject add undesirable delay in the shutter response of the camera.
And finally, with some cameras the user must decide before taking a photograph whether to use fill flash or not. Heretofore, the effect of flash could not be easily added or removed after the photograph is taken. While some cameras can automatically decide whether to use fill flash, photographs taken by an automated camera are still subject to all of the other disadvantages of fill flash. Furthermore, the photographer may disagree with the camera's decision and wish for a way to modify the result.
What is needed is a camera that can add or adjust the effects of fill flash after a photograph is taken, can provide the beneficial effects of fill flash while avoiding the undesirable effects, and can gain the benefits of fill flash in situations where flash photography may not be used.

System and method for simulating fill flash in photography

Hewlett-Packard Development Company, L.P.


A discharge-processing power-source assembly, in which a processing liquid is interposed at a minute gap defined between a workpiece and an electrode, and processing is executed by discharge energy, comprises a D.C. power source supplying electric energy to the minute gap, switching elements for converting D.C. voltage from the D.C. power source to pulse voltage, and a snubber circuit for protecting the switching elements. The discharge-processing power-source assembly further comprises a relay contact for cutting off the snubber circuit when a switching frequency is high.

FIG. 8 of the attached drawings is a circuit view of, for example, a conventional discharge-processing power-source assembly. In FIG. 8, the reference numeral 10 denotes a D.C. power source; 12, a workpiece; 13, an electrode; and 14a, 14b, a first pair of switching elements which, here, are power MOS-FETs; 16a and 16b, a second pair of switching elements which, here, are power MOS-FETs; 15a, 15b, 15c, 15d, snubber circuits for protecting the power MOS-FETs 14a and 14b, and 16a and 16b, each of which is composed of a diode, a capacitor, and a resistance. The reference numeral 17 denotes a discharge preventing resistance.
Operation will next be described. D.C. voltage is applied to a location between the processing electrode 13 and the workpiece 12 (hereinafter referred to as "an interpole location") by the D.C. power source 10, and the first pair of switching elements 14a and 14b are turned ON/OFF simultaneously for a predetermined period of time, to generate a group of pulses of positive voltage, thereby executing discharge processing. Subsequently, the second pair of switching elements 16a and 16b are turned ON/OFF simultaneously for a predetermined period of time, to generate a group of pulses of reverse voltage. However, in order to make it difficult to generate discharge, the discharge preventing resistance 17 is inserted as shown in FIG. 8. This series of operations is executed repeatedly so that discharge processing proceeds.
A waveform of the interpole discharge voltage will next be described with reference to FIGS. 9(a) and 9(b). FIG. 9(a) shows a waveform of the interpole discharge voltage at the time a switching frequency is low (equal to or less than several tens (10) KHz). However, discharge is surely or certainly executed one by one. When the switching elements are turned OFF, the interpole voltage is brought to 0 V. On the other hand, the waveform of the interpole discharge voltage at the time the switching frequency is high (equal to or more than several hundreds (100) KHz) is illustrated in FIG. 9(b). However, once discharge occurs, even if the switching elements are turned OFF, an impedance of the snubber circuits is lowered because the frequency is high, so that processing current does not pass through the switching elements, but continues to flow through the diodes and capacitors of the snubber circuits, as seen for I.sub.1 (on the side of positive voltage) and I.sub.2 (on the side of reverse voltage) illustrated in FIG. 8). Thus, the processing current is brought to concentrated discharge, and the waveform of the interpole discharge voltage is not brought to 0 V even if the switching elements are turned OFF, but is brought to arc voltage.
Further, FIG. 10 is a circuit view of another conventional discharge-processing power-source assembly. In FIG. 10, the reference numeral 20 denotes a first D.C. power source; 22, a workpiece; 23, a wire electrode; 24a, 24b, a first pair of switching elements which, here, are power MOS-FETs; 25a, 25b, 25c, 25d, diodes for protecting the power MOS-FETs; 26a, 26b, a second pair of switching elements which, here, are power MOS-FETs; 27a, 27b, 27c, 27d, diodes for protecting the power MOS-FETs; 28, a current limiting resistance for positive voltage; 29, a current limiting resistance for reverse voltage; 50, a second D.C. power source; 51, a third switching element which, here, is a power MOS-FET; and 52, a surge absorbing circuit.
Operation will next be described. D.C. voltage is applied to the interpole location between the processing electrode 23 and the workpiece 22 by the first D.C. power source 20, and the first pair of switching elements 24a and 24b are simultaneously turned ON, to generate discharge through the current limiting resistance 28 for positive voltage. Immediately thereafter, the third switching element 51 is turned ON so that processing current contributing to processing treatment flows between poles due to the second D.C. power source 50. After a predetermined on-time has been completed, the first pair of switching elements 24a and 24b and the third switching element 51 are turned OFF. Subsequently, the second pair of switching elements 26a and 26b are simultaneously turned ON, to apply reverse voltage to the interpole location through the current limiting resistance 29 for reverse voltage. This series of operations is executed repeatedly so that discharge-processing treatment proceeds. The operation waveform is illustrated in FIG. 11.
In FIG. 11, the first pair of switching elements 24a and 24b are set to ON state, as illustrated at waveform A step (1). At this point, the second and third switching elements 26a, 26b and 51 are in OFF state. Next, voltage (V.sub.0) is applied to the interpole location from the first D.C. power source 20, as seen in waveform D of FIG. 11 at step (2). If a dielectric breakdown occurs at the interpole location, the voltage is dropped from voltage V.sub.0 to an arcing voltage, as seen in waveform D at step (3).
After a dielectric breakdown has occurred, the third switching element 51 is set to an ON state at once, as seen at step (4) of waveform B, for a fixed time t. Meanwhile, the first pair of switching elements 24a and 24b remain in an ON state (overlap state) at the same time, as seen in waveform A. Thereafter, the first pair of switching elements 24a and 24b are set to an OFF state, as seen in waveform A at step (5). It should be noted that after the third switching element 51 is set to ON state at step (4), and processing current is applied to the interpole location from the second D.C. power source 50, as seen in waveform E.
The slope of the processing current at step (7) of waveform E is decided by the inductance (L) of the feeder connected to the interpole location from the second D.C. power source 50. This relationship is represented by the following expression: ##EQU1## I: processing current V: second D.C. power source voltage
L: inductance of feeder PA1 t: On time of third switching element
After desired ON time (t) is passed, the third switching element 51 is set to an OFF state, as seen in waveform B at step (8). Thereafter, the processing current does not change to zero at once, even through the third switching element 51 is set to an OFF state, and the processing current continue to flow until an energy stored in inductance of the feeder changes to zero. This current route is shown by I.sub.1 and I.sub.2 in FIG. 10 and is illustrated in waveform E at step (9).
When the processing current (waveform E) and arcing voltage (waveform D) at the interpole location are changed to zero (step 10), the second pair of switching elements 26a and 26b are set to an ON state at once, as seen at step (11) of waveform C. As a result, reversed polarity voltage is applied to the interpole location from the first D.C. power source 20 and waveform D falls to step (12). After fixed time is passed, the second pair of switching elements 26a and 26b are set to the OFF state, and the voltage value at the interpole location is changed to zero, as seen at step (13).
The above steps (1)-(13) comprise one cycle for one processing. While the processing is being executed for one cycle, when the third switching element 51 is set to the OFF state, as seen in step (8) of waveform B, the current (I.sub.2) continues to flow to the first D.C. power source 20, as seen at step (9) of waveform E. Since a capacitor (not shown) is connected to the first D.C. power source 20, the current continues to flow to the capacitor. Accordingly, an output voltage of the first D.C. power source 20 rises from V.sub.0 to V.sub.0 ', as seen in waveform D, and breakage of the wire occurs.
FIG. 12 is a circuit view of another conventional discharge-processing power-source assembly. In FIG. 12, the reference numeral 30 denotes a D.C. power source; 32, a workpiece; 33, an electrode; 34a, 34b, a first pair of switching elements which, here, are power MOS-FETs; 36a, 36b, a second pair of switching elements which, here, are power MOS-FETs; 35a, 35b, 35c and 35d, diodes for protecting the power MOS-FETs; and 37, a current limiting resistance.
Operation will next be described. D.C. voltage is applied to the interpole location between the processing electrode 33 and the workpiece 32, and the first pair of switching elements 34a and 34b are simultaneously turned ON/OFF for a predetermined period of time, to generate a pulse of positive voltage for executing discharge processing. Subsequently, the
second pair of switching elements 36a and 36b are simultaneously turned ON/OFF for a predetermined period of time, to generate a pulse of reverse voltage. The current limiting resistance 37 is inserted in order to obtain a desired discharge current. This series of operations is repeatedly executed so that discharge processing treatment proceeds.
Here, in order that upper and lower switching elements in a first arm (a portion comprising an upper side of the first pair of switching elements and a lower side of the second pair of switching elements together) or a second arm (a portion comprising a lower side of the first pair of switching elements and an upper side of the second pair of switching elements together) do not cause short-circuiting, it is necessary that both the first/second pairs of switching elements are brought to an OFF condition (dead time) when there is switching between a positive voltage and a reverse voltage (t1 period illustrated in FIG. 13). The dead time prevents two pulses from overlapping and causing a short circuit.
Ordinarily, high processing speed is desired and the discharge frequency must be raised in order to increase the processing speed. For this purpose, it is required that the dead time is shortened and brought close to 0. However, even if the dead time is shortened so as to be located in the neighborhood of 0, the dead time may be insufficient to prevent a short circuit of these are completely runs out by variations in the electronic circuit parts for generating the dead time, variations in the characteristic of the electronic parts attendant upon variation in disturbance due to a temperature and the like, and further by malfunction due to noises or the like. Thus, upper and lower or vertical short-circuiting may be caused by the operation of the concurrent first/second arms.
As reference technical literatures relating the patent invention, there are "ELECTRIC POWER-SOUSE ASSEMBLY FOR DISCHARGE-PROCESSING DEVICE" disclosed in Japanese Patent Laid-Open No.SHO 63-221919, and "ELECTRIC POWER-SOUSE ASSEMBLY FOR DISCHARGE-PROCESSING" disclosed in Japanese Patent Laid-Open No.HEI 2-71920.
The conventional discharge-processing power-source assembly has been constructed as described above. Accordingly, once discharge occurs, discharge current continues to flow through the snubber circuits, even if the switching elements are turned OFF (this particularly noticeably appears if the switching frequency is high). Thus, there is a problem that concentrated discharge occurs so that a processed surface is roughened, or breakage of a wire occurs.
Further, for the conventional discharge-processing power-source assembly that has been constructed as described above, the surge current flowing at the time the third switching element is turned OFF is regenerated also at the first D.C. power source (I.sub.2 illustrated in FIG. 10), in addition to the surge absorbing circuit (I.sub.1 illustrated in FIG. 10). Open voltage V.sub.0 at the time discharge is first generated rises. Thus, there is a problem that breakage of the wire occurs.
Furthermore, for the conventional discharge-processing power-source assembly that has been constructed for high speed processing as described above, the dead time completely runs out, and there is a case where vertical short-circuiting occurs at the first/second arms. When excessive current flows through the switching elements (I.sub.1 and I.sub.2 illustrated in FIG. 12), there is a problem that the switching elements are destroyed so that processing treatment is disabled.

Discharge-processing electric power-source assembly


Compounds of formula (I) are inhibitors of p38 MAP kinase, and are therefore of utility in the treatment of, inter alia, inflammatory conditions including rheumatoid arthritis and COPD:

Inappropriate activation of leukocytes including monocytes, macrophages and neutrophils leading to the production of elevated levels cytokines such as TNF-α, IL1-β and IL-8, is a feature of the pathogenesis of several inflammatory diseases including rheumatoid arthritis, ulcerative colitis, Crohn's disease, chronic obstructive pulmonary disease (COPD), asthma and psoriasis. The production of cytokines by inflammatory cells is a result of response to a variety of external stimuli, leading to the activation of a number of intracellular signalling mechanisms. Prominent amongst these is the mitogen-activated protein kinase (MAPK) superfamily consisting of highly conserved signalling kinases that regulate cell growth, differentiation and stress responses. Mammalian cells contain at least three families of MAPKs: the p42/44 extracellular signal-regulated kinase (ERK) MAPKs, c-Jun NH2-terminal kinases (JNKs) and p38 MAPK (also termed p38a/Mpk2/RK/SAPK2a/CSBP1/2). p38 MAPK was first cloned following its identification as a kinase that is tyrosine phosphorylated after stimulation of monocytes by lipopolysaccharide (LPS) [Han et al, Science 1994, 265, 808]. Additional homologues of mammalian p38 have been described and include p38β [Jiang et al, J. Biol. Chem., 1996, 271, 17920], p38γ [Li et al, Biochem. Biophys. Res. Commun., 1996, 228, 334] and p38δ [Jiang et al, J. Biol. Chem. 1997, 272, 30122]. While p38α and p38β are ubiquitously expressed, p38γ is restricted primarily to skeletal muscle and p38δ is predominantly expressed in lung and kidney.
The release of cytokines by host defense cells and the response of leukocytes to cytokines and other pro-inflammatory stresses are to varying extent regulated by p38 MAPK [Cuenda et al, FEBS Lett, 1995, 364, 229-233]. In other cell types, p38 MAPK controls stress responses such as the production of IL-8 by bronchial epithelial cells stimulated by TNF-α, and the up-regulation of the cell adhesion molecule ICAM-1 in LPS-stimulated endothelial cells. Upon activation, via dual phosphorylation of a TGY motif by the dual specificity kinases MKK3 and MKK6, p38 MAPK exerts its effects through phosphorylation of transcription factors and other kinases. MAP kinase-activated protein kinase-2 (MAPKAPK-2) has been identified as a target for p38 phosphorylation. It has been demonstrated that mice [Kotlyarov et al, Nat. Cell Biol. 1999, 1, 94-97] lacking MAPKAP-K2 release reduced levels of TNF-α, IL-1β, IL-6, IL-10 and IFN-γ in response to LPS/galactosamine mediated endotoxic shock. The regulation of the levels of these cytokines as well as COX-2 is at the mRNA level. TNF-α levels are regulated through translational control via AU-rich elements of the 3′-UTR of TNF-α mRNA, with MAPKAP-K2 signalling increasing TNF-α mRNA translation. MAPKAP-K2 signalling leads to increased mRNA stability for COX-2, IL-6 and macrophage inflammatory protein. MAPKAP K2 determines the cellular location of p38 MAPK as well as transducing p38 MAPK signalling, possessing a nuclear localisation signal at its carboxyl terminus and a nuclear export signal as part of its autoinhibitory domain [Engel et al, EMBO J. 1998, 17, 3363-3371]. In stressed cells, MAPKAP-K2 and p38 MAPK migrate to the cytoplasm from the nucleus, this migration only occurring when p38 MAPK is catalytically active. It is believed that this event is driven by the exposure of the MAPKAP-K2 nuclear export signal, as a result of phosphorylation by p38 MAPK [Meng et al, J. Biol. Chem. 2002, 277, 37401-37405]. Additionally p38 MAPK either directly or indirectly leads to the phosphorylation of several transcription factors believed to mediate inflammation, including ATF1/2 (activating transcription factors 1/2), CHOP-10/GADD-153 (growth arrest and DNA damage inducible gene 153), SAP-1 (serum response factor accessory protein-1) and MEF2C (myocyte enhancer factor-2) [Foster et al, Drug News Perspect. 2000, 13, 488-497].
It has been demonstrated in several instances that the inhibition of p38 MAPK activity by small molecules, is useful for the treatment of several disease states mediated by inappropriate cytokine production including rheumatoid arthritis, COPD, asthma and cerebral ischemia. This modality has been the subject of several reviews [Salituro et al, Current Medicinal Chemistry, 1999, 6, 807-823 and Kumar et al, Nature Reviews Drug Discovery 2003, 2, 717-726].
Inhibitors of p38 MAPK have been shown to be efficacious in animal models of rheumatoid arthritis, such as collagen-induced arthritis in rat [Revesz et al, Biorg. Med. Chem. Lett., 2000, 10, 1261-1364] and adjuvant-induced arthritis in rat [Wadsworth et al, J. Pharmacol. Exp. Ther., 1999, 291, 1685-1691]. In murine models of pancreatitis-induced lung injury, pretreatment with a p38 MAPK inhibitor reduced TNF-α release in the airways and pulmonary edema [Denham et al, Crit. Care Med., 2000, 29, 628 and Yang et al, Surgery, 1999, 126, 216]. Inhibition of p38 MAPK before ovalbumin (OVA) challenge in OVA-sensitized mice decreased cytokine and inflammatory cell accumulation in the airways in an allergic airway model of inflammation, [Underwood et al, J. Pharmacol. Exp. Ther., 2000, 293, 281]. Increased activity of p38 MAP kinase has been observed in patients suffering from inflammatory bowel disease [Waetzig et al, J. Immunol, 2002, 168, 5432-5351]. p38 MAPK inhibitors have been shown to be efficacious in rat models of cardiac hypertrophy [Behr et al, Circulation, 2001, 104, 1292-1298] and cerebral focal ischemia [Barone et al, J. Pharmacol. Exp. Ther., 2001, 296, 312-321].
We have now discovered a group of compounds which are potent and selective inhibitors of p38 MAPK (p38α,β,γ and δ) and the isoforms and splice variants thereof especially p38α, p38β and p38β2. The compounds are thus of use in medicine, for example in the treatment and prophylaxis of immune and inflammatory disorders described herein. The compounds are characterised by the presence in the molecule of an amino acid motif or an amino acid ester motif which is hydrolysable by an intracellular carboxylesterase. Compounds of the invention having the lipophilic amino acid ester motif cross the cell membrane, and are hydrolysed to the acid by the intracellular carboxylesterases. The polar hydrolysis product accumulates in the cell since it does not readily cross the cell membrane. Hence the p38 MAP kinase activity of the compound is prolonged and enhanced within the cell. The compounds of the invention are related to the p38 MAP kinase inhibitors encompassed by the disclosures in International Patent Application WO03076405 but differ therefrom in that the present compounds have the amino acid ester motif referred to above.

Abstract: wherein: G is —N═ or —CH═; D is an optionally substituted divalent mono- or bi-cyclic aryl or heteroaryl radical having 5-13 ring members; R6 is hydrogen or optionally substituted C1-C3 alkyl; P represents hydrogen and U represents a radical of formula (IA); or U represents hydrogen and P represents a radical of formula -A-(CH2)z—X1-L1-Y—NH—CHR1R2 wherein A represents an optionally substituted divalent mono- or bicyclic carbocyclic or heterocyclic radical having 5-13 ring members; z, Y, L1, and X1 are as defined in the specification; R1 is a carboxylic acid group (—COOH), or an ester group which is hydrolysable by one or more intracellular esterase enzymes to a carboxylic acid group; and R2 is the side chain of a natural or non-natural alpha amino acid.


Systems, methods, and devices for wireless communication are disclosed. In one implementation an apparatus for wireless communications is provided. The apparatus includes a receiver configured to receive a wake-up message that is a portion of a wake-up sequence. In certain implementations, the apparatus further includes a processing system operably coupled to the receiver and configured to wake the receiver for a period of time. The period of time can exceed at least a transmission period of the wake-up sequence plus a transmission period of the wake-up message. The apparatus can further include a transmitter configured to transmit a message acknowledging receipt of the wake-up message.

1. Field
The present application relates generally to wireless communications, and more specifically to systems, methods, and devices to enable wireless communication. Certain implementations herein relate to low power wake-up signals and operations for WLAN.
2. Background
In many telecommunication systems, communications networks are used to exchange messages among several interacting spatially-separated devices. Networks may be classified according to geographic scope, which could be, for example, a metropolitan area, a local area, or a personal area. Such networks may be designated respectively as a wide area network (WAN), metropolitan area network (MAN), local area network (LAN), or personal area network (PAN). Networks also differ according to the switching/routing technique used to interconnect the various network nodes and devices (e.g., circuit switching vs. packet switching), the type of physical media employed for transmission (e.g., wired vs. wireless), and the set of communication protocols used (e.g., Internet protocol suite, SONET (Synchronous Optical Networking), Ethernet, etc.).
Wireless networks are often preferred when the network elements are mobile and dynamic connectivity may be advantageous, or if the network architecture is formed in an ad hoc, rather than fixed, topology. Wireless networks employ intangible physical media in an unguided propagation mode using electromagnetic waves in the radio, microwave, infra-red, optical, etc. frequency bands. Wireless networks advantageously facilitate user mobility and rapid field deployment when compared to fixed wired networks.
The devices in a wireless network may transmit/receive information between each other. The information may comprise packets, which in some implementations may be referred to as data units. The packets may include overhead information (e.g., header information, packet properties, etc.) that helps in routing the packet through the network, identifying the data in the packet, processing the packet, etc., as well as data, for example user data, multimedia content, etc. as might be carried in a payload of the packet.

Systems and methods for low power wake-up signal implementation and operations for WLAN


A cleaning assembly for eyeglasses having at least one lens supported by a frame including at least one aperture substantially the size of a cross section of the at least one lens, wherein the aperture can fit at least one cleaning element and adapted to move relative to the at least one lens to clean the exposed surface of the lens.

Eyeglasses, also known as glasses, spectacles or even specs are conventionally known as frames holding one or more lenses in front of the eyes. Eyeglasses can include goggles or masks with lenses. Eyeglasses serve a variety of purposes including: correction of deficient vision, protection sunlight or other hazards, for viewing or decoding visual information such as three-dimensional movies or for aesthetic or fashion purposes.
A disadvantage to using eyeglasses is their inconvenience from reduced visibility if the surfaces of the lenses become covered with materials such as water condensation, dust or other opaque materials. Conventional methods of cleaning eyeglasses include using cloths or other sheets with or without cleaning fluids. However, this is inconvenient as the eyeglasses must be removed from the wearer. This then results in a temporary loss of vision or protection which can also increase the danger to the wearer, if they are doing high-risk activities or are protecting from radiation. It can also interrupt playing sport activities and further it is inconvenient for the wearer to carry the sheets or tissues and cleanings fluids on their person.
In view of the above, it is desirable to produce safer and more effective ways to clean eyeglasses. However, equipping separate wiper components on frames can be complex to manufacture given the thinly shaped frame of conventional eyeglasses. In terms of aesthetical appearance, it is acceptable to wear eyeglasses with only frame and fitted lenses. But unlike wipers for cars, it is not aesthetical to wear eyeglasses that have separate wiper components
Therefore, an advanced cleaning assembly for eyeglasses is preferable to resolve the mentioned manufacturing and aesthetical problems.


An object of the invention is to provide a blow-molded foam which has homogeneous foamed cells in size, is light in weight, and is excellent in surface smoothness, and a process for producing the same. The invention is directed to a blow-molded foam 1 having a wall portion formed in such a manner that a thermoplastic resin containing a foaming agent mixed therewith is subjected to blow molding. Herein, the wall portion has a closed cell structure in which a plurality of foamed cells are contained. The wall portion has an expansion ratio of not less than 2.0 times. The wall portion has an outer face having a center-line average surface roughness Ra of less than 9.0 μm. The foamed cell has a cell diameter having a standard deviation of less than 40 μm in a thickness direction of the wall portion.

A foam blow-molding process is carried out by extruding a thermoplastic resin containing a foaming agent added thereto into an atmosphere as a parison and inserting the parison between split mold blocks (e.g., refer to Patent Document 1).
As a blow-molded foam product obtained by such a process, there has been known one that principally contains a polypropylene-based resin having predetermined physical properties (e.g., refer to Patent Document 2).
In such a blow-molded foam product, however, when being released to the atmosphere, foamed cells in the parison are abruptly expanded to make cells larger. Occasionally, there is a possibility that the cells are ruptured.
In order to overcome this disadvantage, there has been examined a process for making foamed cells finer in diameter while maintaining a high expansion ratio.
For example, there has been mentioned a foam duct molded by foam blow-molding in which a supercritical fluid is added as a foaming agent (e.g., refer to Patent Document 3).
Patent Document 1: JP 63-309434 A
Patent Document 2: Japanese Patent No. 3745960
Patent Document 3: JP 2005-241157 A

Blow-molded foam and process for producing the same


A semiconductor device has a protected node and a reference node, and a bi-directional ESD structure electrically coupled between the protected node and the reference node. The bi-directional ESD structure includes a main transistor electrically coupled between the protected node and the reference node, an upper control transistor with current nodes electrically coupled between the protected node and a control node of the main transistor, and a lower control transistor with current nodes electrically coupled between the reference node and a control node of the main transistor. The bi-directional ESD structure also includes an upper trigger network configured to provide a transient on-state signal to the upper control transistor from a positive electrical pulse on the protected node. The bi-directional ESD structure further includes a lower trigger network configured to provide a transient on-state signal to the lower control transistor from a negative electrical pulse on the protected node.

Electrostatic discharge (ESD) events pose performance and reliability risks to semiconductor devices. It is desirable for ESD protection circuits to handle both positive and negative current flow, that is, provide bi-directional protection. For some devices, the protected input/output (I/O) pad may handle positive and negative voltages during operation, requiring the corresponding ESD circuit to withstand the operating voltages without breakdown or degradation. Attaining bi-directional protection using back-to-back components has generally resulted in unwanted increases in the size of the ESD structure. Attaining bi-directional protection without back-to-back components has generally required added photolithographic operations, resulting in increased fabrication complexity and cost.

Area-efficient bi-directional ESD structure


A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.

1. Field of the Invention
The present invention relates to a semiconductor probe with a resistive tip and a method of fabricating the same, and more particularly, to a semiconductor probe having a metal shield that exposes a resistive region of a resistive tip, and a method of fabricating the semiconductor probe.
2. Description of the Related Art
As compact products such as mobile communication terminals and pocket PCs have become more popular, the demand for highly-integrated nonvolatile micro recording media has increased. It is not easy to miniaturize existing hard disks or to highly integrate flash memories. Therefore, information storage devices using a scanning probe have been studied as an alternative.
Probes are used in various scanning probe microscopy (SPM) techniques. For example, probes are used for a scanning tunneling microscope (STM) that detects a current produced when a voltage is applied between a probe and a sample to reproduce information; an atomic force microscope (AFM) that uses an atomic force developed between a probe and a sample; a magnetic force microscope (MFM) that uses an interactive force developed between a magnetic field produced by a sample and a magnetized probe; a scanning near-field optical microscope (SNOM) that overcomes a resolution limitation caused by the wavelength of visible light; and an electrostatic force microscope (EFM) that uses an electrostatic force developed between a sample and a probe.
In order to record and reproduce information at high speed and high density using such SPM techniques, a surface charge in a small area of several tens of nanometers in diameter should be detected. Also, cantilevers should be in the form of an array to increase recording and reproduction speeds.
FIG. 1 is a schematic cross-sectional view of a resistive tip of a semiconductor probe and a storage medium, disclosed in International Patent Publication No. WO 03/096409. The semiconductor probe is vertically formed on a cantilever to protrude from the cantilever. An array of the semiconductor probes can be fabricated, and each of the semiconductor probes can be fabricated to have a diameter of tens of nanometers.
Referring to FIG. 1, a tip 50 of the semiconductor probe includes a body 58 doped with a first impurity, a resistive region 56 formed at the peak of the tip 50 and lightly doped with a second impurity, and first and second semiconductor electrode regions 52 and 54 formed on sloped sides of the tip 50 with the resistive region 56 therebetween and heavily doped with the second impurity. Here, if the first impurity is a p-type impurity, the second impurity is an n-type impurity, and if the first impurity is an n-type impurity, the second impurity is a p-type impurity.
The quantity of surface charge 57 of a recording medium 53 affects the intensity of an electric field. A change in the intensity of the electric field causes a change in the resistance of the resistive region 56. The polarity and intensity of the surface charge 57 can be detected from a variation in the resistance of the resistive region 56.
Although a depletion region 68 of the resistive tip 50 does not extend to the first and second semiconductor electrode regions 52 and 54, the volume of the resistive region 56 is reduced due to the depletion region 68, which acts as a non-conductor. Consequently, the resistance of the resistive region 56 changes, such that the polarity and intensity of the surface charge 57 can be detected.
However, in a conventional semiconductor probe with the resistive tip 50, the semiconductor electrode regions 52 and 54 formed on the sloped sides of the resistive tip 50 are affected by the surface charge 57, thereby degrading the spatial resolution of the resistive region 56.

Semiconductor probe with resistive tip having metal shield thereon


A protective circuit module and a secondary battery including the same. The secondary battery includes: an electrode assembly, a can to house the electrode assembly, and a cap assembly to seal an opening of the can. The protective circuit module includes: a first module electrically connected to the cap assembly; a second module electrically connected to a closed end of the can; and a third module electrically connecting the first module and the second module. The first module includes a mounting portion that is disposed in a groove between the can and the cap assembly.

1. Field of the Invention
Aspects of the present invention relate to a protective circuit module and a secondary battery including the same.
2. Description of the Related Art
A lithium ion secondary battery generally includes a bare cell, a protective circuit module connected to the bare cell, and a case to cover the bare cell and the protective circuit module. In recent years, much research has focused on miniaturizing secondary batteries, while maintaining the functionality thereof.

Protective circuit module and secondary battery including the same


Several aspects of an in-line welding gun are disclosed. In one aspect, the welding gun has a variable profile insulating boot disposed over the torch barrel of the gun. The variable profile insulating boot may include a molded material having varying thickness to provide the desired insulating properties. In another aspect of the welding gun, a speed control mechanism for the motor driving the wire feed assembly is positioned in a recess in the housing such that it reduces the risk of being unintentionally adjusted during operation of the welding gun. In another aspect of the welding gun, the wire feed mechanism features a feeder roller and an idler roller that may be separated without opening the housing of the welding gun. To separate the rollers, the user may depress a portion on the exterior of the housing to press on a pivotable lever on which the idler roller is disposed.

1. Field of the Invention
This invention relates generally to a welding gun and, more specifically, to an in-line MIG welding gun.
2. Description of the Related Art
A MIG welding gun generally comprises a handle, a wire feed mechanism, a motor for driving the wire feed mechanism and a torch barrel. The welding gun typically also includes a gas tube and a cooling fluid tube for supplying gas and cooling fluid to the tip of the torch barrel.
There are two general types of welding guns: pistol grip and in-line welding guns. In a pistol grip gun, the motor is located below the wire feed mechanism and lies along an axis that lies generally perpendicular to the longitudinal axis of the gun. In contrast, in an in-line gun, the motor lies along the longitudinal axis of the gun and is positioned generally behind the wire feed mechanism.
Torch barrels may be straight or curved (e.g., "goose necked") depending upon the type of welding to be accomplished and the preferences of the welder. In some arrangements, the welding gun is configured such that the operator can change the angular position of a curved barrel relative to the wire feed mechanism. Such welding guns generally require relatively complicated connections between the torch barrel and the gas and cooling fluid tubes. In contrast, welding guns in which the torch barrel is stationary are relatively less complicated and expensive. As such, welding guns with stationary torch barrels are particularly popular.


The present invention concerns 3D-crystals of complexes of ribosomal S6 kinase (RSK) and mitogen- and stress-activated protein kinase (MSK) proteins and their ligands, as well as methods for crystallization, three-dimensional structure determination and structure assisted methods for identifying ligands of said proteins.

Fumaric acid esters (FAE) are a group of compounds beneficial in systemic treatment of psoriasis1-6 and recently FAEs have also been suggested as a new therapeutic option to treat relapsing remitting multiple sclerosis7-9.
Various combinations of FAEs for oral treatment of psoriasis have been used for more than 50 years10,11. Although a controlled study demonstrated the efficacy of dimethylfumarate (DMF) in psoriasis in 198912, it was an empirically composed mixture of dimethylfumarate (DMF) with calcium, magnesium and zinc salts of ethylhydrogen fumarate that was registered as Fumaderm® in Germany in 1994. Fumaderm® has since then become the leading drug for systemic therapy of psoriasis in Germany11. One limitation in the use of FAE's is the reported side effects with flushing and gastrointestinal symptoms such as diarrhoea, nausea and cramps. Thus, overall FAE's have been shown to have a favourable long-term safety and clinical-efficacy profile2 and in particular no long-term toxicity nor a higher risk for infections or malignancies have been observed in more than 100,000 patient years3.
A second generation fumaric acid derivative (BG-12) was developed as an enteric-coated microtablet to improve gastrointestinal tolerability13. BG-12 has shown very promising result in patients with relapsing-remitting multiple sclerosis in a multi-centre, randomized, double-blind, placebo-controlled phase IIb study9,14 and most recently two phase III clinical trials in patients with relapsing-remitting multiple sclerosis including more than 2600 patients have been reported to confirm these results although the complete data set has not yet been published15.
Fumaric acid esters have been shown to be effective in several dermatological diseases including: Necrobiosis16-19, granuloma annulare18,20-22, alopecia areata23, cheilitis granulomatosa18,24, recurrent oral aphthae25, pityriasis rubra pilaris18, and annular elastolytic giant cell granuloma18, as well as a range of non-dermatological diseases: Sarcoldosis18,26 and non-infectious chronic uveitis27. Fumaric acid esters have also shown potential for the use in treatment of cancer28-30, Huntington's disease31, malaria32, human immunodeficiency virus33, bronchial asthma34, myocardial infarction35 and for use as an immunosuppressor in organ transplantation36.
Despite a clear clinical effect of FAE's in psoriasis and relapsing-remitting multiple sclerosis and numerous in vitro and in vivo studies with FAE's, the precise mechanism of action had not been fully understood. FAEs have been shown to inhibit the expression of TNF-α induced adhesion molecules37 as well as various cytokines including psoriasis associated cytokines like IL-IP, IL-6, IL-8, IL-20 and TNF-α38-40. DMF also suppresses the expression of VEGFR2 in human endothelial cells indicating a possible anti-angiogenic action41. Other possible mechanisms causing an anti-psoriatic effect are FAE induced apoptosis of purified human T-cells42 and a FAE induced shift in the immunological balance from a Th1- towards a Th2-like43. Because there is a lack of detectable DMF plasma concentrations after oral intake it has been suggested that there is a reaction of DMF with glutathione (GSH) in the portal vein blood44. This hypothesis has recently been supported by novel findings of Ghoreschi and co-workers45.
Both multiple sclerosis (MS) and psoriasis are considered autoimmune CD4+ T-cell driven disorders with predominance of a Th1 and Th17 phenotype of pathogenic T-cells46. Dendritic cells (DCs) are professional antigen-presenting cells (APCs) bridging innate and acquired immunity, recognizing infections, secreting proinflammatory cytokines and orchestrating the maturation of naïve T-cells and to create the cytokine microenvironment regulating T-cell differentiation47. FAE have previously been shown to induce a shift in the immunological balance from a Th1- toward a Th2-like response43 and to inhibit the differentiation of dendritic cells48. More recently Ghoreschi at al. 201145 suggested that DMF depletes glutathione (GSH) followed by increased hemoxygenase-1 (HO-1) expression and impaired STAT1 phosphorylation. HO-1 interact with AP-1 and NF-κB binding sites in the IL-23p19 promoter inhibiting its expression and IL-23 is a key driver of Th17 maturation. STAT1 inhibition prevented IL-12p35 expression leading to decreased expression of the Th1 driver, IL-12. It was therefore suggested that DMF improved MS and psoriasis through inhibition of Th1 and Th17 responses. In this model, the DMF induced GSH depletion is essential.
In opposition to this, several studies have shown that DMF induces a transient GSH depletion whereas prolonged exposure raised GSH expression11 and therefore depletion of GSH cannot account for all the effects of DMF seen in MS and psoriasis. However, regulation of T-cell differentiation is important in controlling these two diseases and it is therefore interesting that a recent study59 has demonstrated DMF mediated inhibition of Th1 and Th17 differentiation through suppression of NF-κB and the p38 MAPK-MSK1 and ERK1/2-MSK1 signalling pathways39,46. Both NF-κB and MAPK activation have previously been shown to contribute to LPS mediated DC maturation49,50. Although the ERK1/2 MAPK and the NF-κB pathways are independent, they can interact via MSK1. MSK1 enhances NF-κB transcriptional activity through phosphorylation of serine 276 of the NF-κB subunit, p65. Further MSK1 phosphorylates Histone-3 at serine 10 which also enhances NF-κB transcriptional activity. The present inventors and others have previously demonstrated an inhibitory effect of DMF on different signaling pathways including the p38 MAPK-MSK1, ERK1/2-RSK1 and MSK1-NF-κB pathways36, 39 59.
DMF has previously been shown to block the activation of the Ribosomal S6 Kinase family (composed of RSK1 to RSK4 and the homologous kinases MSK1 and MSK2) by the extracellular signal-regulated kinase (ERK)39,49.
MSK1/2 and RSK1/2 have overlapping effects on transcription factors like the cAMP-responsive element (CREB), ATF1 and Histone 346, while RSK1 to RSK4 separately regulate the phosphorylation of c-Fos, c-Jun and JunB. The complexes of c-Fos, c-Jun and JunB, formed as dimers, bind to the activator 1 (AP-1) site and AP-1 DNA binding activity regulates cell proliferation54. The specific inhibitory effect of DMF on RSK1 and MSK1 activation followed by the induction of p-c-Jun (S63) and p-p53 (S15) led to the inhibition of keratinocyte proliferation, partly explaining the anti-psoriatic effect of DMF46. The specificity of DMF's inhibitory effect on RSK1 and MSK1 activation was proved by transfection with small interfering RSK1 and MSK1 RNA instead of DMF which showed the same effects on induction of p-c-Jun (S63) and p-p53 (S15)46.
MSK1/2 and RSK1-4 are activated by pro-inflammatory cytokines and growth factors and their activity is controlled by multiple phosphorylation sites55,56. The serine and threonine kinase activity of MSK1/2 and RSK1-4 is dependent on full length activation by phosphorylation at multiple sites in MSK1/2 and RSK1-457. The alignment of the amino acid sequences shows 43% homology between MSK1/2 and RSK1-458.
MSKs and RSKs are composed of two kinase domains (a N- and a C-terminal) and are activated by either p38 MAPKs and ERK 1/2 for MSK1/2 or only by ERK1/2 for RSK1-455-57. The activation starts for both MSKs and RSKs in a similar way by phosphorylation of an activation loop in the C-terminal kinase domain. This phosphorylation leads to the activation of the hydrophobic linker loop in the middle part and then the N-terminal kinase domain is phosphorylated. The N-terminal kinase domain binds and phosphorylates substrates. DMF has been shown to fully inhibit activation of specific phosphorylation sites at the C-terminal domain, in the linker loop and in the N-terminal domain and this reduced the kinase activity of the N-terminal domain and thereby downstream substrate activations39,46,51.
The MSK/RSK kinases are composed of two catalytic domains (an N- and a C-terminal) separated by a ˜100 amino acid linker. Each of the catalytic domains is composed of a small N-terminal lobe comprising β-sheets and a larger C-terminal lobe mainly comprising α-helices. ATP and substrate are bound in the interface between the two lobes. The kinases are activated by ERK by phosphorylation of an activation loop in the C-terminal catalytic domain. This phosphorylation leads to the activation of the N-terminal catalytic domain by phosphorylation of the linker region. Phosphorylation of the linker region is abolished by DMF and the activation of the N-terminal kinase domain hereby reduced39,46. An apo-structure of the C-terminal kinase domain of murine RSK2 was previously described47 but does not provide any insights to the binding of ligands (e.g. ATP and substrate). Some RSK2 inhibitors have been identified including Staurosporine like compounds48, kaemperol-glycosides49 and 50s. The majority of the identified RSKs inhibitors are ATP-competitive and bind in the ATP pocket between the two lobes in either one or both of the catalytic domains. An irreversible RSK2 inhibitor of the C-terminal catalytic domain has been developed, covalently binding to a cysteine located in the ATP pocket51,52.
ATP-competitive inhibitors generally display reduced selectivity due to the numerous ATP-binding pockets in the cell and poor cellular activity due to the high intracellular ATP concentration. The development of an allosteric RSK/MSK inhibitor will reduce off-target effects and increase efficacy. DMF can form covalent adducts with intracellular thiol containing molecules such as GSH, whereas a RSK/MSK selective inhibitor will only undergo covalent interaction once bound in the allosteric pocket.

Methods and tools for identification of RSK/MSK kinase inhibitors


A multi-compartment liner bag is disposed within a receptacle and includes a first compartment having a height that is greater than that of the receptacle and a volume that is at least about equal to that of the receptacle. A second bag compartment is attached to and folds to the side of the first compartment when placed in the receptacle and has an entry folded over the receptacle top to form at least a visual seal to the compartment contents. Indicia means, which may be either visual or tactile, are provided along the second compartment entry to allow easy location of the compartment entry.

1. Field of the Invention
This invention relates generally to bags that are used as liners for waste baskets, trash cans, and the like.
More specifically, this invention relates to multi-compartment trash or refuse bags that are used in association with, or as liners for, containers used as a repository for soiled, recyclable, or discarded items.
2. Description of Related Art
Waste baskets, trash cans, and similar open-topped containers are commonly used in kitchens, bathrooms, bedrooms, offices, garages and shops as a repository for soiled or discarded personal care, recyclable, and other waste materials. Such containers typically employ a bag-like liner of plastic film or similar material and the liner is usually sized somewhat larger than the container. That allows a filled liner bag to be securely closed so that the bag and its contents can be removed from the container without danger of spillage. Means that have been used to secure the bag in a closed position include plastic or metal ties, a drawstring arranged within a channel disposed at the open bag end, and various adhesive or mechanical sealing strips arranged to close and seal the open bag end.
It is often the case that in bathroom or bedroom use, some of the waste materials needing disposal are soiled, odorous, unsanitary, or of a personal nature while the remainder of the waste material is of a more innocuous kind. Segregation and interim storage of the different waste types now requires separate repositories. Different types of waste materials are also commonly found in kitchen or office use. In kitchen use, for example, it often is desirable to segregate food preparation wastes and scraps from paper, empty containers and cans so that the one type of waste can be composted and the other type of waste recycled. Again, separate containers are required for the segregated collection and interim storage of the different trash types. An analogous situation exists with office trash.
This invention provides a multi-compartment liner for trash and refuse containers that allows separation of different types or classes of discarded items for interim storage and later disposal. It also ensures a more esthetic environment in that one type of discarded item may remain hidden from direct view during a period of interim storage.
Other advantages of this invention will become evident from the following description of the invention and of specific embodiments thereof.

Multi-compartment trash or recycling bag


A device for sensing the amount of dust, refuse, etc., flowing into a dust suction tubular member of a vacuum cleaner. The device comprises a light emitting element and photoreceptor, the light emitting element and photoreceptor facing each other with a dust path between them provided in the inside of the dust suction tubular member, a detector for detecting the amount of the light supplied from the light emitting element and photoreceptor from being flush with the inside of the dust suction tubular member, a ring-shaped projection formed in the inside of the dust suction tubular member for increasing the inflow speed of the air including dust, refuse, etc., through the space between the light emitting element and photoreceptor.

The present invention relates generally to a vacuum cleaner, and more particularly to a device for sensing the amount of dust, refuse, etc. flowing into the suction path of a vacuum cleaner so as to automatically adjust the dust suction force.
In a conventional vacuum cleaner, there is provided a device for sensing the amount of dust flowing into a suction path by means of a light emitting element and photoreceptor attached to the inside of the suction path facing each other, whereby the rotating speed of a fan motor is controlled so as to adjust the dust suction force. In this case, since the light emitting element an photoreceptor are exposed to the dust in the suction path, the dust accumulates on them, degrading the performance. In order to offset such performance degradation of the light emitting element and photoreceptor there has been proposed a dust sensing device for an electric cleaner disclosed in EPO Laid-Open Patent Publication No. 347, 223 published on Dec. 20, 1989.
In this publication, the light emitting element and photoreceptor are provided with covers that are attached flush with the inside of the suction path. In addition, there is also provided a surface which is outwardly sloped from the covers towards the inlet of the dust suction so as to increase the speed of the dust flow in the region of the light emitting element and photoreceptor, thus preventing the dust from being attached thereto by dust. In addition, the light radiating end of the light emitting element has a smaller diameter so as to prevent the dispersion of the light and thereby improve dust-sensing capability.
However, in such a dust-sensing device, the diameter of the suction path cannot provide a sloped surface of sufficient height, so that dust attaches to the covers of the light emitting element and photoreceptor thus degrading their sensing capability. Moreover, the light radiating end of the light emitting element is too small to precisely and sufficiently detect the amount of dust flow.

Device of sensing dust for a vacuum cleaner


Methods and apparatus, including computer program products, implementing and using techniques for inventory management. Managing data items in an inventory management system. A request to add a data item to the inventory management system is received. The data item has an associated set of attributes to be represented in the inventory management system. It is determined whether the inventory management system includes a structure in which the data item and the sets of attributes associated with the data item can be represented. If no structure exists in which the data item and the set of attributes associated with the data item can be represented, a new structure is automatically defined in which the data item and the set of attributes associated with the data item can be represented. The data item and the set of attributes associated with the data item is added to the defined new structure.

This invention relates to inventory management.
A typical supply chain management (SCM) system involves the management of materials, information, and finances as they move in a process from a supplier to a manufacturer, a wholesaler, a retailer, and to the final consumer. A SCM system can be viewed as a process that includes a product flow, an information flow, and a finance flow. The product flow includes the movement of goods from a supplier to a customer, as well as any customer returns or service needs. The information flows involves transmitting orders and updating the status of the delivery. The finance flow includes credit terms, payment schedules, and consignment and title ownership arrangements. All these different types of flows can be controlled and monitored using computer software.
Typically, SCM software can be divided into two application categories: planning applications and execution applications. Planning applications use advanced algorithms to determine the best means to fill an order. Execution applications track the physical status of goods, the management of materials, and financial information involving the various parties in the supply chain.
One example of a software solution for supply chain management is the mySAP Supply Chain Management (mySAP SCM™) solution provided by SAP AG, located in Walldorf, Germany. The mySAP SCM™ solution is integrated with the mySAP.com® e-business platform that also provides other solutions, such as mySAP Product Lifecycle Management that ties suppliers into the design process and thereby increases quality and reduces time to market; mySAP Supplier Relationship Management that is used to locate the best suppliers and shorten sourcing cycles; and mySAP Customer Relationship Management that provides visibility into the end customer (see the worldwide website of SAP.com® for further information about the mySAP.com® e-business platform).
One important function of SCM systems is to manage stock, for example, keeping stock quantities, recording stock quantity changes resulting from goods movements, and providing information in response to queries about stock quantities and stock movements. In the current mySAP.com e-business solution, most of the functionality relating to Enterprise Resource Planning (ERP), including stock management, is performed by an SAP R/3 software component.
The changing nature of supply chains cause new needs that can not or can only partly be fulfilled by existing solutions, such as the SAP R/3 component. For example, the flow of goods in a global supply chain often includes the participation of several partners working with different SCM systems. It would be desirable to be able to retrieve stock information throughout the whole supply chain. Another example of new needs relate to logistic service providers, who need to manage physical inventories from different companies in a single warehouse. In existing applications, the underlying structure for stock management functionality is typically linked to the structure of the company owning the stock and can not handle an organization that only temporarily manages the stock (such as a logistics service provider).
There is also an increased need for management of stock quantity data substantially in real time. Some types of stock need to be represented in multiple units, because certain properties may change (for example, gasoline increases its volume when the temperature increases, while the mass is constant, and therefore a volume representation only is insufficient). Companies also need the flexibility to add new products, product groups, and so on to their stock management applications.


In allocating bandwidth using a Resilient Packet Ring (RPR) fairness mechanism in a node connected to an RPR network, when congestion occurs, an amount of traffic that the node has transmitted to a ring during one aging interval is stored together with its own identifier in a fairness message as a fairness transmission rate to be advertised to its own upstream nodes. The amount of traffic transmitted from the upstream node during the aging interval is measured and stored. When the congestion has been solved, an available bandwidth is calculated with reference to the fairness transmission rate and the amount of traffic transmitted from the upstream nodes, and the fairness transmission rate is calculated to fairly allocate the available bandwidth to the upstream nodes so that the fairness transmission rate is transmitted to the upstream nodes.

1. Field of the Invention
The present invention relates to a method of allocating bandwidth using a Resilient Packet Ring (RPR) fairness mechanism and to a program storage device, readable by a machine, tangibly embodying a program of instructions executable by the machine to perform a method of allocating bandwidth using a Resilient Packet Ring (RPR) fairness mechanism.
2. Description of the Related Art
The current Internet can be classified into three parts, namely, a subscriber network, a metro network and a backbone network. Although the subscriber and backbone networks have been developed to accommodate Internet traffic which has abruptly increased recently, the metro network connecting two networks to each other is constructed as a ring network of a SONET/SDH (Synchronous Optical Network/Synchronous Digital Hierarchy) scheme which is an existing circuit switching scheme. Accordingly, bandwidth is not being used efficiently.
Therefore, a bottleneck occurs in the current metro network and an imbalance of speed occurs in an entire network structure. A metro Ethernet of a packet switching scheme has been suggested as technology to make up for the disadvantages of the SONET/SDH net.
However, although the metro Ethernet has a great merit in that traffic of the current Internet is in packets, it has disadvantages in that a high-speed protection mechanism provided in a point-to-point ring network or mesh topology SONET network cannot be provided since most current metro networks have a ring topology configuration.
Furthermore, the Ethernet also has disadvantages in that it is difficult to embody a mechanism for entire fairness in sharing the bandwidth of the ring. An IEEE 802.17 Resilient Packet Ring (RPR) of a protocol in layer 2 has been suggested as a technology for transmitting the traffic with more efficiency in the metro network by making up for the disadvantages of the existed metro network.
An RPR fairness mechanism is defined in the RPR scheme so that all of the nodes of the ring can fairly use the bandwidth of the ring.
All nodes of the RPR are connected to a dual ring and Media Access Control (MAC) protocols are independently operated for the two rings. The RPR MAC provides Class-A (High Priority), Class-B (Medium Priority) and Class-C (Low Priority) services in accordance with the priority of the traffic. Also, the Class-B service is divided into traffic which observes a predefined Committed Information Rate (CIR) and traffic which does not observe the predefined CIR. The CIR observing traffic is processed in the same manner as the Class-A traffic, and the CIR violating traffic is called an Excess Medium Priority (eMP) traffic and is processed in the same manner as the Class-C traffic.
Only the eMP and Class-C traffic described above are applied to the RPR fairness mechanism. The RPR MAC has addA, addB and addC transmission buffers.
Also, all kinds of control traffic are transmitted to the ring through the addMac transmission buffer in order to control the ring. The nodes in the RPR have ring configurations so that each of the nodes has to perform a role of a transit node which transmits the traffic transmitted by a source node to a destination node.
Accordingly, there are two transit buffers, namely, a Primary Transit Queue (PTQ) and a Secondary Transit Queue (STQ) in the RPR MAC in order to perform the role of a transit node. Also, the STQ transit buffer has two threshold values, a high_threshold and a low_threshold, to find and control congestion. The Class-A traffic from an upstream node is transmitted to a downstream node through the PTQ transit buffer and the Class-B and Class-C traffic from the upstream node are transmitted to the downstream node through the STQ transit buffer.
The RPR fairness mechanism is driven by monitoring an amount of traffic transmitted by an MAC client of the node and an amount of the Class-C and eMP traffic transmitted from the upstream node, and has following parameters in order to control amounts of such traffic.
addRate: measuring the amount of the Class-C and eMP traffic transmitted from its client to a ring.
addRateCongested: measuring the amount of the addRate traffic transmitted from its client to the ring and transmitted to a downstream node after a node in which congestion has occurred.
fwRate: measuring the amount of the Class-C and eMP traffic transmitted to the ring through its STQ transit buffer.
fwRateCongested: measuring the amount of fwRate traffic transmitted to the ring through its STQ transit buffer and transferred to a downstream node after a node in which congestion has occurred.
allowedRateCongested: measuring the amount of the maximum addRate traffic transmitted to the downstream node after a node in which the congestion has occurred. When congestion does not occur in the downstream node, that is, when a fairness transmission rate of a FULL value is received from the downstream node, this value is increased at intervals.
Each of the nodes checks its STQ buffer every aging interval. When the amount of the traffic exceeds the low_threshold, congestion has occurred in the node, and a fair rate and its MAC address are carried on the fairness message and transmitted to an upstream node when a current advertisement interval is completed.
The upstream node which received the fairness message reestablishes its allowedRateCongested value as a fairness transmission rate of the received fairness message. That is, the node which received the fairness message transmits the amount of traffic (Class-C+eMP) transmitted by the node during the next aging interval so as not to exceed the received fairness transmission rate so that the congestion does not occur.
That is, when the amount of addRate (Class-C+eMP) transmitted by a node due to the traffic transmitted from the upstream node is reduced, that node advertises the reduced addRate to the upstream nodes using the fairness message. The upstream nodes which have received this fairness message control their transmission rates so as not to exceed the received fairness transmission rate, and are arranged so that when the traffic inputted from the upstream node is reduced, the addRate of the node in which the congestion has occurred is increased again so that the congestion is resolved.
All nodes of the RPR network transmit the fairness message whenever an advertised interval is completed, and the fairness message includes a fairness transmission rate of a node in which congestion occurs most severely and an MAC address of its node, and the fairness message is transmitted to the upstream nodes in a hop-by-hop scheme. The transmitted fairness transmission rate is the amount of the addRate (Class-C+eMP) which the node in which the congestion currently occurs most severely has transmitted during the previous aging interval.
As described above, the RPR fairness mechanism discussed above has problems in that congestion occurs and the bandwidth which is not used but available is not efficiently used after the congestion has been solved so that the bandwidth usage ratio is low.
The following patents each discloses features in common with the present invention but do not teach or suggest the inventive features specifically recited in the present application: U.S. Patent Application No. 2003/0163593 to Knightly, entitled METHOD AND SYSTEM FOR IMPLEMENTING A FAIR, HIGH-PERFORMANCE PROTOCOL, FOR RESILIENT PACKET RING NETWORKS, published on Aug. 28, 2003; U.S. Patent Application No. 2003/0035371 to Reed et al., entitled MEANS AND APPARATUS FOR A SCALEABLE CONGESTION FREE SWITCHING SYSTEM WITH INTELLIGENT CONTROL, published on 20 Feb. 2003; U.S. Patent Application No. 2004/0100984 to Nam et al., entitled RESOURCE ALLOCATION METHOD FOR PROVIDING LOAD BALANCING AND FAIRNESS FOR DUAL RING, published on May 27, 2004; U.S. Patent Application No. 2004/0032826 to Sridhar, entitled SYSTEM AND METHOD FOR INCREASING FAIRNESS IN PACKET RING NETWORKS published on Feb. 19, 2004; and U.S. Patent Application No. 2004/0103179 to Damm et al., entitled TOPOLOGY MANAGEMENT OF DUAL RING NETWORK, published on May 27, 2004.

Allocating bandwidth using resilient packet ring (RPR) fairness mechanism


The present invention provides a heat source unit capable of being used in either an air conditioner for switchable cooling and heating operation or an air conditioner for simultaneous cooling and heating operation. An air conditioner principally includes one heat source unit, a plurality of utilization units, and a connecting unit provided for each utilization unit. The heat source unit uses water as the heat source, and principally includes a compressing means, a main heat exchanger, a first switching means, a main refrigerant switching means, an auxiliary heat exchanger connected in parallel with the main heat exchanger, a second switching means, an auxiliary refrigerant switching means, and a liquid receiver. The auxiliary heat exchanger is capable of switching between functioning as an evaporator and a condenser, by the second switching means.

Conventional air conditioners are known that are capable of switchable cooling and heating operation or simultaneous cooling and heating operation, and include a plurality of utilization units, and a heat source unit. Each utilization unit includes a utilization side refrigerant circuit that includes a utilization side heat exchanger and a utilization side expanding means. The heat source unit includes a heat source side refrigerant circuit that includes a compressing means that compresses a refrigerant, a main heat exchanger, a first switching means for making the main heat exchanger to function as an evaporator and a condenser, and a main refrigerant switching means that includes a motor operated expansion valve capable of regulating the refrigerant flow of the main heat exchanger. The utilization side refrigerant circuit and the heat source side refrigerant circuit are connected via a connecting refrigerant circuit. In such an air conditioner, the load of the heat source unit is regulated according to the load of the plurality of utilization units, and operation is performed so that the thermal balance of the entire refrigeration cycle is satisfied. For example, the air conditioner is constituted so that the main heat exchanger is actuated as the evaporator during heating operation or during simultaneous cooling and heating operation; therefore, the amount of evaporation of the refrigerant is varied in the main heat exchanger by regulating the opening of the main refrigerant switching means, thus balancing the load of the utilization units and the load of the heat source unit. At this time, the variation in the amount of evaporation of the main heat exchanger is achieved by regulating the opening of the main refrigerant switching means while fixedly maintaining the high pressure refrigerant pressure on the discharge side of the compressing means of the heat source unit. In other words, if the amount of evaporation of the refrigerant in the main heat exchanger is greater than the amount of evaporation of the refrigerant corresponding to the load of the utilization units, then the amount of evaporation of the refrigerant is reduced by restricting the opening of the main refrigerant switching means because there is a tendency for the high pressure refrigerant pressure on the discharge side of the compressing means of the heat source unit to increase. Conversely, if the amount of evaporation of the refrigerant in the main heat exchanger is less than the amount of evaporation of the refrigerant corresponding to the load of the utilization units, then the amount of evaporation of the refrigerant is increased by enlarging the opening of the main refrigerant switching means because there is a tendency for the high pressure refrigerant pressure on the discharge side of the compressing means of the heat source unit to decrease.
As an example of another conventional air conditioner, one is known that provides, inside the heat source unit, an auxiliary heat exchanger provided in parallel with the main heat exchanger and that functions as the condenser. This air conditioner is constituted so that the load of the utilization units and the load of the heat source unit are balanced by regulating the thermal balance of the entire heat source unit by actuating and stopping the auxiliary heat exchanger. In other words, if the amount of evaporation of the refrigerant in the main heat exchanger is greater than the amount of evaporation of the refrigerant corresponding to the load of the utilization units, then there is a tendency for the high pressure refrigerant pressure on the discharge side of the compressing means of the heat source unit to increase; consequently, the thermal balance of the entire heat source unit is regulated by actuating the auxiliary heat exchanger to increase the amount of condensation and to offset the amount of evaporation of the refrigerant of the main heat exchanger. Conversely, if the amount of evaporation of the refrigerant in the main heat exchanger is less than the amount of evaporation of the refrigerant corresponding to the load of the utilization units, then there is a tendency for the high pressure refrigerant pressure on the discharge side of the compressing means of the heat source unit to decrease; consequently, the thermal balance of the entire heat source unit is regulated by stopping the auxiliary heat exchanger to decrease the amount of condensation.
An air conditioner is also known that includes both the above mentioned main refrigerant switching means and the auxiliary heat exchanger. Such an air conditioner is basically constituted so that the loads of the utilization units are balanced by actuating and stopping the auxiliary heat exchanger to regulate the thermal balance of the entire heat source unit, and so that fine adjustment is performed by regulating the opening of the main refrigerant switching means.
In an air conditioner that balances the load of the utilization units and the load of the heat source unit by regulating the thermal balance via the main refrigerant switching means and the auxiliary heat exchanger of the heat source unit, the greater the condensing capacity of the auxiliary heat exchanger is with respect to the evaporative capacity of the main heat exchanger, the more the range of regulation of the heat source unit with respect to the fluctuation in the load of the utilization units is unfortunately limited. For example, if the capacity of the auxiliary heat exchanger is increased, then the fluctuations in the refrigerant pressure on the high pressure side may unfortunately increase due to actuating and stopping of the auxiliary heat exchanger. Conversely, if the capacity of the auxiliary heat exchanger is decreased, then the range over which regulation must be performed by the main refrigerant switching means unfortunately increases; consequently, it may no longer be possible to restrict the amount of evaporation of the main heat exchanger particularly if the heating load of the utilization units is small.
Thus, in a conventional air conditioner capable of switchable operation or simultaneous cooling and heating operation, it is problematic to optimize the thermal balance of the heating load of the utilization units and the evaporative performance of the heat source unit while maintaining controllability.
In addition, in the above mentioned conventional air conditioner for switchable cooling and heating operation and the air conditioner for simultaneous cooling and heating operation, the model of the utilization units is shared, but the model of the heat source unit varies, which leads to an increase in manufacturing costs.

Heat source unit with switching means between heating and cooling


A portable diaper changing pad with a memory foam insert. The diaper changing pad comprises a mat with a panel having a body of memory foam as a cushion. The memory foam insert preferably comprises a raised head rest section. In one embodiment, the diaper changing pad further comprises two side section panels which may be folded over the middle panel. When the side section panels are folded over the middle panel, the diaper changing pad may be rolled and securely closed for easy storage and portability. The diaper changing pad preferably has a terry cloth cover. Other preferred embodiments include a nonskid bottom surface, a storage bag, and accessories, such as toys.

The present invention relates to a diaper changing pad apparatus, in particular a portable diaper changing pad with a memory foam insert. Other aspects of the invention are met through the use of soft, cloth covers.
A number of diaper changing pads are known in the art. However, one common problem in the prior art is the lack of comfort for the baby or infant placed on the changing pad. For example, the changing pad of U.S. Pat. No. 4,886,150 lacks a comfortable surface. Moreover, no known prior art diaper changing pads utilize both a terry cloth cover and a memory foam insert to maximize the comfort of the baby or infant. Thus, there is a need for such a diaper changing pad.
In addition, other prior art changing pads do not incorporate useful features that would improve the versatility and portability of a changing pad. For example, the changing pad of U.S. Patent Pub. No. 2004/0211003 does not incorporate useful accessories such as toys and baby wipes. The changing pads of U.S. Patent Pub. No. 2004/0211003 and U.S. Pat. No. 6,694,552 do not conveniently roll up for easy transportation and storage. Therefore, there is a need for a comfortable diaper changing pad that incorporates such features.