A power-supplying apparatus for a sliding structure including: a wiring harness arranged between a vehicle body and a sliding structure slidably mounted on the vehicle body; a protector mounted on the sliding structure for receiving the wiring harness; a holder attached to the wiring harness for moving in the protector together with the wiring harness; a first resilient member mounted on the holder along the wiring harness from the holder toward a harness outlet of the protector for urging upward the wiring harness opposed to a harness slack; and a second resilient member mounted on the holder to bend the wiring harness in a loop shape in response to a movement of the holder owing to a slide of the sliding structure.

1. Field of the Invention
The present invention relates to a power-supplying apparatus mounted on a sliding structure such as a sliding door of a vehicle for constantly supplying electricity to such as auxiliaries of the sliding structure.
2. Description of the Related Art
FIGS. 5 to 6 show an embodiment of a conventional sliding door (for example, refer to Japanese Published Patent Application No. 2001-354085).
This power-supplying apparatus 40 is installed on a sliding door 1 of a vehicle, and includes a protector 142 having a base and a cover (not shown) made of synthetic resin for receiving a wiring harness 143, and a metallic flat spring 144 assembled inside the protector 142 for urging upward the wiring harness 143.
The protector 142 is composed of a substantially semicircular part for receiving the wiring harness 143 and a slim extended part extended from a rear of the semicircular part, and has a vertical base 149, a round wall 150 disposed along a top end of the base 149, an oblong lower opening 145 for extending the wiring harness, and a front opening 151.
The protector 142 is vertically interposed between a metallic door panel 152 and a door trim made of synthetic resin (not shown). The wiring harness 143 is curved horizontally at the lower opening 145, arranged to a vehicle body 147, and fixed to a holder (not shown) at the vicinity of a step 148. Further, the wiring harness 143 is arranged into an inside of the sliding door through the front opening 151, and connected to the auxiliaries at the sliding door or a harness with connectors in order to constantly supply electricity.
The wiring harness 143 is made of a plurality of electric wires covered by a flexible corrugate tube made of synthetic resin. The corrugate tube is made by arranging alternately circular furrows and ridges. The wiring harness 143 is extended from the front opening 151 to a harness holder at the vehicle body 147.
As shown in FIG. 5, at almost fully closed state of the sliding door 1, the wiring harness 143 is pulled backward and bends the flat spring 144 downward. At a half-open state of the sliding door, the wiring harness is about to slack downward, but urged upward by the flat spring 144 to absorb the slack. As shown in FIG. 6, at almost fully open state of the sliding door 1, the wiring harness 143 is pulled forward and bends the flat spring 144 downward.
However, there is a problem that a space for components and the auxiliaries in the sliding door is reduced, because a conventional structure of the power supplying apparatus is to lift the wiring harness 143 with the flat spring 144 for absorbing the slack, and especially when an open/close stroke of the sliding door 1 is large, a height of the protector 142 should be large. Further, the conventional structure needs the metallic flat spring 144 and a bracket for fixing the flat spring 144, and resultingly a cost of the power-supplying apparatus is increased. Further, a lot of time is needed for fixing the flat spring 144.
Therefore, Japanese Published Patent Application No. 2005-20895 discloses a power-supplying apparatus which does not use a flat spring for preventing an enlarged protector, and a loop part is openable by a resiliency of a wiring harness with a harness guiding member, so that a height of the protector can be lower than that of the conventional protector, and a flexibility of arranging components in a sliding door is increased.
However, in the power-supplying apparatus of Japanese Published Patent Application No. 2005-20895, a resilient member such as a spring is needed to be used for urging obliquely downward a second guiding roller composing a harness guiding members. Because the resilient member is contracted when the sliding door is fully open, a pulling force to the wiring harness is increased. Thus, the wiring harness may be broken. Further, a structure for fixing and sliding guiding rollers composing the harness guiding members is needed. Therefore, a structure of the power-supplying apparatus becomes complex, and a cost of the power-supplying apparatus is increased. Further, an assembling work of the power-supplying apparatus becomes difficult.
Accordingly, an object of the present invention is to provide a power-supplying apparatus for a sliding structure which makes a structure thereof simple, allows a load to a wiring harness to be reduced, so that a protector can be downsized.

Power-supplying apparatus for sliding structure


A parametric coding method and apparatus are provided for coding a multichannel digital audio signal. The method includes a coding step for coding a signal from a channel reduction matrixing of the multichannel signal. The coding method also includes: obtaining, for each frame of predetermined length, spatial information parameters of the multichannel signal; dividing the spatial information parameters into a plurality of blocks of parameters; selecting a block of parameters as a function of the index of the current frame; and coding the block of parameters selected for the current frame.

This type of coding/decoding is based on the extraction of spatial information parameters so that, on decoding, these spatial characteristics can be reconstructed for the listener.
This type of parametric coding is applied in particular for a stereo signal. Such a coding/decoding technique is, for example, described in the document Breebaart, J. and van de Par, S and Kohlrausch, A. and Schuijers, entitled "Parametric Coding of Stereo Audio" in EURASIP Journal on Applied Signal Processing 2005:9, 1305-1322. This example is reprised with reference to FIGS. 1 and 2 respectively describing a parametric stereo coder and decoder.
Thus, FIG. 1 describes a coder receiving two audio channels, a left channel (denoted L) and a right channel (denoted R).
The channels L(n) and R(n) are processed by blocks 101, 102 and 103, 104 respectively which perform a short-term Fourier analysis. The transformed signals L[j] and R[j] are thus obtained.
The block 105 performs a channel reduction matrixing, or "Downmix" to obtain from the left and right signals a sum signal, a mono signal in the present case, in the frequency domain.
An extraction of spatial information parameters is also performed in the block 105.
The parameters of ICLD ("InterChannel Level Difference") type, also called interchannel intensity difference, characterize the energy ratios for each frequency subband between the left and right channels.
They are defined in dB by the following formula:
                              ICLD                                [            k            ]                          =                              10            ·                                          log                10                            (                                                                    ∑                                          j                      =                                              B                                                                          [                          k                          ]                                                                                B                                                                          [                                                      k                            +                            1                                                    ]                                                                    -                      1                                                                                L                                                                    [                        j                        ]                                                              ·                                                                  L                        *                                                                                [                        j                        ]                                                                                ∑                                          j                      =                                              B                                                                          [                          k                          ]                                                                                B                                                                          [                                                      k                            +                            1                                                    ]                                                                    -                      1                                                                                R                                                                    [                        j                        ]                                                              ·                                                                  R                        *                                                                                [                        j                        ]                                                                                )                                          dB                                    (        1        )
in which L[j] and R[j] correspond to the (complex) spectral coefficients of the channels L and R, the values B[k] and B[k+1], for each frequency band k, define the subdivision into sub-bands of the spectrum and the symbol * indicates the complex conjugate.
A parameter of ICPD ("InterChannel Phase Difference") type, also called phase difference for each frequency subband, is defined according to the following relationship:ICPD[k]=∠(Σj=B[k]B[k+1]−1L[j]·R*[j])  (2)
in which ∠ indicates the argument (the phase) of the complex operand.
In a manner equivalent to the ICPD, it is also possible to define an interchannel time difference (ICTD).
An interchannel coherence (ICC) parameter represents the interchannel correlation.
These parameters ICLD, ICPD and ICC are extracted from the stereo signals by the block 105.
The monosignal is passed into the time domain (blocks 106 to 108) after short-term Fourier synthesis (inverse FFT, windowing and overlap-add (OLA)) and a mono coding (block 109) is performed. In parallel, the stereo parameters are quantized and coded in the block 110.
In general, the spectrum of the signals (L[j],R[j]) is divided according to a nonlinear frequency scale of ERB (Equivalent Rectangular Bandwidth) or Bark type, with a number of sub-bands ranging typically from 20 to 34. This scale defines the values of B(k) and B(k+1) for each sub-band k. The parameters (ICLD, ICPD, ICC) are coded by scalar quantization possibly followed by an entropic coding or a differential coding. For example, in the paper cited previously, the ICLD is coded by a nonuniform quantizer (ranging from −50 to +50 dB) with differential coding; the non-uniform quantization step exploits the fact that the greater the ICLD value, the lower the auditory sensitivity to the variations of this parameter.
In the decoder 200, the monosignal is decoded (block 201), and a decorrelator is used (block 202) to produce two versions {circumflex over (M)}(n) and {circumflex over (M)}′(n) of the decoded monosignal. These two signals passed into the frequency domain (blocks 203 to 206) and the decoded stereo parameters (block 207) are used by the stereo synthesis (block 208) to reconstruct the left and right channels in the frequency domain. These channels are finally reconstructed in the time domain (blocks 209 to 214).
In stereo signal coding techniques, an intensity stereo coding technique consists in coding the sum channel (M) and the energy ratios ICLD as defined above.
Intensity stereo coding exploits the fact that perception of the high-frequency components is mainly linked to the time (energy) envelopes of the signal.
For monosignals, there are also quantization techniques with or without memory such as the "pulse-code modulation" (PCM) coding or its adaptive version called "adaptive differential pulse-code modulation" (ADPCM).
Interest here is more particularly focused on ITU-T Recommendation G.722 which uses ADPCM (adaptive differential pulse code modulation) coding with code nested in sub-bands.
The input signal of a G.722-type coder is wideband with a minimum bandwidth of [50-7000 Hz] with a sampling frequency of 16 kHz. This signal is broken down into two subbands [0-4000 Hz] and [4000-8000 Hz] obtained by breakdown of the signal by quadrature mirror filters (QMF), then each of the sub-bands is separately coded by an ADPCM coder.
The low band is coded by an ADPCM coding with nested codes on 6, 5 and 4 bits whereas the high band is coded by an ADPCM coder of two bits per sample. The total bit rate is 64, 56 or 48 bit/s depending on the number of bits used for the decoding of the low band.
Recommendation G.722 was first used in the ISDN (integrated services digital network), then in enhanced telephony applications on HD (high definition) voice quality IP networks.
A quantized signal frame according to the G.722 standard is made up of quantization indices coded on 6, 5 or 4 bits in the low band (0-4000 Hz) and 2 bits in the high band (4000-8000 Hz). Since the transmission frequency of the scalar indices is 8 kHz in each sub-band, the bit rate is 64, 56 or 48 Kbit/s. In the G.722 standard, the 8 bits are distributed as follows: 2 bits for the high band, 6 bits for the low band. The last or the last two bits of the low band can be "stolen" or replaced by data.
The ITU-T has recently launched a standardization activity called G.722-SWB (in the context of the Q.10/16 issue described, for example, in the document: ITU-document: Annex Q10.J Terms of Reference (ToR) and time schedule for the super wideband extension to ITU-T G.722 and ITU-T G.711WB, January 2009, WD04_G722G711SWBToRr3.doc) which consists in extending the G.722 Recommendation in two ways:                An extension of the acoustic band from 50-7000 Hz (wideband) to 50-14000 Hz (super-wide band, SWB).        An extension from mono to stereo. This stereo extension can extend a mono coding in wideband or a mono coding in super-wideband.
In the context of G.722-SWB, the G.722 coding works with short 5 ms frames.
The focus of interest here is more particularly on the stereo extension of the wideband G.722 coding.
Two G.722 stereo extension modes are to be tested in the G.722-SWB standardization:                A 56 Kbit/s G.722 stereo extension with an additional bit rate of 8 Kbit/s, or 64 Kbit/s in total        a 64 Kbit/s G.722 extension with an additional bit rate of 16 Kbit/s, or 80 Kbit/s in total.
The spatial information represented by the ICLD or other parameters requires an (additional stereo extension) bit rate that is all the greater when the coding frames are short.
As an example, in the context of the G.722-SWB standardization, if it is assumed that a G.722 (wideband) stereo extension is implemented by the intensity coding technique, the following stereo extension bit rate is obtained.
For a sum (mono) signal coded by G.722 with a 5 ms frame and a breakdown of the wideband spectrum (0-8000 Hz) into 20 sub-bands, 20 ICLD parameters to be transmitted every 5 ms are obtained. It can be assumed that these ICLD parameters are coded with an (average) bit rate of the order of 4 bits per sub-band. The G.722 stereo extension bit rate therefore becomes 20×4 bits/5 ms=16 Kbit/s. Thus, the G.722 stereo extension by ICLD with 20 sub-bands results in an additional bit rate of the order of 16 Kbit/s. Now, according to the prior art, ICLD coding on its own is not generally sufficient to achieve a good stereo quality.
This example therefore illustrates the difficulty in producing a stereo extension of a coder such as G.722 with short (5 ms) frames.
A direct coding of the ICLD (with no other parameters) gives an additional (stereo extension) bit rate of around 16 Kbit/s which is already the maximum possible extension bit rate for the G.722 extension.
There is therefore a need to represent the stereo, or more generally multichannel signal, effectively, with a bit rate that is as low as possible, with an acceptable quality, when the coding frames are short.

Optimized low-bit rate parametric coding/decoding


Provided is an organic light-emitting device having little apparent deterioration of a durable luminance. The organic light-emitting device includes a hole transport layer and a light-emitting layer which are located in a predetermined order between a reflection electrode for reflecting light and an electrode for transmitting light, the hole transport layer being in contact with the reflection electrode and made of an organic compound, and the light-emitting layer being made of an organic compound, wherein an optical film thickness L of the hole transport layer is set in a range of 0.25λ×(2n −1.7) to 0.25λ×(2n−1.3), where λ indicates an emission wavelength and n indicates a positive integer.

FIG. 3 is a schematic view showing an example of a stacked structure of a top-emission organic light-emitting device. As shown in FIG. 3, in the organic light-emitting device (organic electroluminescence (EL) device), layers each made of an organic compound are stacked between a reflection electrode (anode) 21 for reflecting light which is provided on a support substrate 20 and a transparent electrode (cathode) "b" for transmitting light. For example, a hole transport layer 22, a light-emitting layer 23, an electron transport layer 24, and an electron injection layer 25 are stacked in mentioned order from the side of the reflection electrode.
For an organic light-emitting device of this type, there have been attempts to set an optical thickness of each of the layers in order to improve the light-extraction efficiency by an interference effect and to set a light-emitting region in order to prevent the reduction of internal quantum efficiency due to current flow. Japanese Patent Application Laid-open No. H07-78689 (page 2, lines 5 to 10) discloses that an emission peak of light generated in a light-emitting layer is made equal to an interference peak caused by an interference effect and used for light to pass through each of the stacked layers in order to improve the emission luminance of the organic light-emitting device. Japanese Patent Application Laid-open No. 2004-235015 (page. 2, lines 4 and 5) discloses that a light-emitting region of the light-emitting layer is set at a position away from an interface between the light-emitting layer and an adjacent layer by a predetermined distance in order to improve a lifetime characteristic. Japanese Patent Application Laid-open No. 2005-150043 (page 5, lines 47 to 50 and page 6, lines 6 to 11) describes that an optical distance from a reflection plane to an anode-side interface layer of an organic light-emitting layer is made shorter than one-fourth of a shortest wavelength of light emitted from the organic light-emitting layer in order to extract the light emitted from the light-emitting layer without changing an original color of the emitted light.
In the conventional organic light-emitting devices, the light-extraction efficiency is improved by the interference effect, and the internal quantum efficiency is stabilized by the light-emitting region control. However, the reduction of the light-extraction efficiency which is caused by change in a light-emitting region with the elapse of time as well as a measure to avoid the reduction are not known at all.
That is, even when the light-extraction efficiency is improved by the interference effect, a light-emitting device made of a conventionally known organic material has a problem that the internal quantum efficiency is gradually reduced by current flow, or the light-emitting region is gradually changed to reduce the light-extraction efficiency. The inventors of the present invention actually recognized a phenomenon that, even when the light-extraction efficiency of an organic light-emitting device using generally known tris[8-hydroxyquinolinate]aluminum (Alq3) as a material of a light-emitting layer was improved by optimizing the interference effect, the luminance of the device significantly was reduced by current flow.
As described above, although the organic light-emitting device in which the light-extraction efficiency is improved by the interference effect has an improved initial light emission efficiency, reduction in internal quantum efficiency and light-extraction efficiency simultaneously occur in the device. Therefore, there is a problem that the durability for stable light emission reduces. Then, when the device is used to produce a display apparatus, there is a problem that burn-in occurs.


A light emitting diode (LED) lamp tube for replacing a linear fluorescent lamp that includes an inner tube wall, an outer tube wall, at least one LED array, and at least one waveguide, where the at least one LED array is coupled to an inner surface of the inner tube wall. The at least one waveguide is coupled to the end of the outer tube and is configured to reflect light emitted from the at least one LED array toward a space located between the inner tube wall and the outer tube wall.

LED-based linear fluorescent replacement lamps are becoming more popular as LED source performance continues to improve. However, conventional LED-based solutions often either suffer from pixelization caused by the displacement of multiple LEDs along the length of the lamp and/or inefficiencies caused by a lack of uniformity of illumination along the length of the lamp.

Systems, methods, and devices for providing an LED-based linear fluorescent replacement lamp


According to one embodiment, a direct-methanol fuel cell includes an anode into which an aqueous methanol solution is introduced as fuel, a cathode into which an oxidizing agent is introduced, an electrolyte membrane interposed between the anode and the cathode, an anode separator which is disposed on the anode side and includes a fuel passage formed on a surface facing the anode, and a cathode separator which is disposed in the cathode side and includes an oxidizing gas passage formed on a surface facing the cathode. At least the cathode separator is provided with a coating film including a macromolecular polymer having a water-repellent functional group and an ionic functional group, the coating film being formed on at least an inside surface of the oxidizing gas passage.

A direct-methanol fuel cell comprises an anode into which an aqueous methanol solution is introduced as fuel, a cathode into which an oxidizing gas is introduced, an electrolyte membrane interposed between these electrodes, a fuel separator which is disposed in the anode and comprises a fuel passage, and a cathode separator which is disposed in the cathode and comprises an oxidizing gas passage. As each of these separators, a carbon plate or SUS plate is currently used.
In such a direct-methanol fuel cell, droplets of water-methanol condense primarily on the inside surface of the oxidizing gas passage of the cathode separator in the process of generating electricity. The droplets of liquid clog the oxidizing gas passage, that is, cause so-called flooding, which hinders the flow of the oxidizing gas such as air. As a result, the reduction reaction of the cathode is hindered, degrading the output and reliability of the fuel cell.


Exemplary materials exhibiting high emissivity and methods for making them are provided. These materials can include a porous coating of small particles provided on a substrate, where the particles can resist sintering and further densification at high temperatures. These materials may be formed by generating an arc using a one-sided electrode apparatus, where particles produced by the arc and electrode can impinge on the substrate and adhere to it. The coating can include predominantly undensified small particles which can have a size less than about 1 μm. These materials can have an emissivity greater than 0.8 or 0.9. Such materials can be used to form infrared emitters which may provide greater energy efficiency and increased operating lifetime as compared to uncoated emitters. Surfaces coated with small particles may be used in further applications such as catalytic or reactive surfaces, engine components, or acoustical dampening surfaces.

Heat from a combustion reaction can be converted to a more uniform radiation, which can be in the infrared ("IR") range, by an emitter plate which can be heated by the reaction and may become red hot. A gas/air mixture entering a distribution chamber can be dispensed uniformly over a radiating surface of the emitter, where the surface may be approximately parallel to a paper or textile web. Heat produced in a combustion chamber can be initially contained in the flue gases, and may then be converted to IR radiation.
Surfaces can emit thermal radiation when heated. However, at a particular temperature and wavelength, there can be a theoretical maximum amount of radiation that any surface can emit. A surface that emits this maximum amount of radiation can be referred to as a "black body." Certain equations such as, e.g., Planck's Law, may be used to calculate the amount of radiation emitted by a surface as a function of wavelength and temperature. Most surfaces are not black body emitters, and are capable of emitting only a fraction of the amount of thermal radiation that a black body would emit under similar conditions. This fraction can be referred to as emissivity. For example, a surface which emits half as much radiation at a given wavelength and temperature as a black body may have an emissivity of 0.5. A "universal" black body can be considered to have an emissivity of 1.0 at all temperatures and wavelengths. Table 1 provides typical emissivities of various materials and surfaces coated with vapor deposits.
A black body surface condition (e.g., an emissivity equal to 1) can be approached by providing a deep hole (e.g., a pinhole) where radiation may be reflected several times along the walls of the hole before emanating from the hole. This type of an efficient emitter can thus be a deep object. The geometric shape of such a black body can be based on, e.g., performance, total size and/or production costs. For example, a black body can have a form of a hollow spherical shell which includes a hole in the shell, and a viewing port may be provided off-axis so that the interior surface is seen at an angle. The effective emissivity of such a spherical shell can depend on, e.g., temperature uniformity, emissivity of an interior surface of the shell, and a ratio of the viewing port size to the sphere size. It may be difficult to uniformly heat such a sphere, and this type of black body may be of primarily theoretical interest rather than having practical uses.
Other geometrical configurations may be used to construct objects that can behave similar to black bodies such as, for example, cylindrical cavities, conical cavities and/or double cones. These configurations can promote multiple reflections of emitted energy in a manner similar to that of a spherical shell. The effective emissivity of such configurations can approach a theoretical maximum (e.g., an emissivity very close to 1) if they are properly designed and fabricated. Plates that are approximately flat may generally have a lower emissivity than other shapes, but they can be preferred in practical applications where large, uniform areas are desired for emission of radiation. Such large emitting areas can be used, e.g., for drying paper webs or textiles during production thereof. Surface emissivity can be an important factor for energy radiation performance when a flat plate is used. A higher emissivity value for a surface can provide, e.g., more efficient radiation and/or cooler operating temperatures for a given rate of IR emission.
Properties and performance of IR emitters may be understood in part by considering, e.g., the Stefan-Boltzmann equation which relates a power density q radiated by a "gray body" (e.g., a radiating object having an emissivity less than that of a black body) to a temperature of the body. The Stefan-Boltzmann equation can be written as:q=Aσ∈T4  (1)where the power density q can be expressed in units of W/m2, the Stefan-Boltzmann constant σ=5.67×10-8 W/(m2-K4), a material-dependent emissivity ∈ can be between 0 and 1, inclusive, and T can represent the absolute temperature of the body in degrees Kelvin. The parameter A can represent a nominal area of the body (e.g., a cross-sectional area taken normal to a portion of the body). A surface can have an effective area which may be larger than the nominal area A. For example, a rough surface can have an effective area which may be larger than that of a similarly-sized smooth surface. A surface area density can refer to a ratio of the effective area of a body or surface to the nominal area. For example, a smooth surface can have a surface area density of approximately 1, and a rough surface may have a surface area density greater than 1. Such increases in surface area density can lead to an increase in the emissivity E as described in Eq. (1), which can be based on the nominal area A. However, surface roughening using conventional techniques such as, e.g., machining, grinding and/or peening may not provide a significant increase in the effective surface area, and the increase in surface area density provided by such techniques may diminish at high temperatures.
TABLE 1Approximate emissivity values for various materials and coatings.MaterialEmissivityBrilliant Aluminum Paint0.31Finch Aluminum Paint 643-1-10.23Dupont Silver Paint 48170.49Chromeric Silver Paint 5860.30Black Chrome0.62Black Copper0.63Black Nickel0.66Polished Nickel0.072Vapor deposited Aluminum0.02Vapor deposited Aluminum on Fiberglass0.07Vapor deposited Aluminum on Stainless Steel0.02Vapor deposited Chromium0.17Vapor deposited Germanium0.09Vapor deposited Gold0.02Iron Oxide0.56Vapor deposited Molybdenum0.21Vapor deposited Nickel0.04Vapor deposited Rhodium0.03Vapor deposited Sliver0.02Vapor deposited Titanium0.12Vapor deposited Tungsten0.27
Radiation output of an emitter can be proportional to the fourth power of the absolute temperature T, as described in Eq. (1). Minor increases in temperature can thus result in a much greater radiative output q and a corresponding increased drying effect. However, conventional emitter materials may not be suitable for constant operation at very high temperatures, which can reduce their service life (e.g., by high temperature corrosion). A maximum radiation output which can maintain a sufficiently long service life may thus be limited by the emitter material's resistance to a degradation at high temperatures.
Energy from the combustion reaction, which may be contained in a flue gas, can be transferred convectively to an emitter, e.g., by flow of the hot gas along a solid body. This mechanism can affect the efficiency of gas-fired IR emitters. For example, energy emitted in the form of IR radiation may first be transferred convectively to the emitter. Thus, both thermal radiation and convective heat transfer can affect the performance of gas-fired infrared emitters.
A specific convective heat transfer rate Q, in units of W/m2, can be described by the following equation:Q=α(Tfg−Te),  (2)where α can represent a heat-transfer coefficient in units W/m2-K. The temperature of the flue gas, Tfg, may not exceed an adiabatic flame temperature. This adiabatic flame temperature, for example, can be raised by preheating the combustion air and/or by using pure oxygen instead of air as a combustion gas. A reduction of the emitter operating temperature, Te, which can increase the convective heat transfer rate Q as suggested by Eq. (2), may not be desirable because it can also reduce the radiation output. Greater convective heat transfer may be achieved, e.g., by increasing the heat-transfer coefficient α. This parameter can be varied by varying fluid dynamical behavior and surface characteristics within the combustion chamber.
Gas-fired IR emitters which may be used in the paper and/or textile industry can be classified into general groups based on the material used to form them, e.g., fiber emitters, ceramic emitters and metal emitters. Such emitters can preferably have some or all of the following features: long service life, ignition reliability, high output level, short heat-up and/or cool-down time, and cross-directional moisture control.
A fiber emitter can include a fiber mesh formed of, for example, metal fibers that can be approximately 3 mm thick or ceramic fibers which may be up to approximately 25 mm thick. Such fibers can provide a temperature barrier in fiber emitters. A gas/air mixture can flow through almost the entire cross-sectional surface of the fiber mesh, which can cool the mesh and also lead to relatively low gas-flow velocities. The actual combustion process can occur at least partially in the outer layer of the fiber.
Fiber emitters may be of limited use for applications in the paper industry because of low flow velocities and unfavorable convective heat transfer performance (which may operate at, e.g., approximately 30-35% efficiency). Also, a flame in such an emitter can be easily disturbed by secondary air currents such as those which may be associated with an adjacent moving sheet or web. Increasing the thermal input power supplied to such an emitter (e.g., by increasing the gas/air flow rate) above a critical level can causes the flame to rise above the fiber surface and burn unevenly. Such uneven combustion can be referred to as a "blue flame mode" and can lead to a rapid decrease in the level of radiation output from the emitter.
Gas-fired infrared ("IR") emitters which may be used in the paper and/or textile industry can be classified into general groups based on the material used to form them, e.g., fiber emitters, ceramic emitters and metal emitters. Such emitters can preferably have some or all of the following features: long service life, ignition reliability, high output level, short heat-up and/or cool-down time, and cross-directional moisture control.
A fiber emitter may be prone to damage caused by clogging of the fiber mesh. Gas flow may be blocked in certain portions of the mesh, which can cause an irreversible reduction of the radiating surface. Such degradation in a fiber emitter performance can be referred to as a "coating-color splash."
As the flame burns in an outermost layer of a fiber mesh (where the outer layer may be, e.g., approximately 0.3 mm deep) and the mesh is relatively open, short heat-up and cool-down periods may be achieved. For example, the fibers may reach an operating temperature within about 3 seconds and may cool down at a similar rate. However, the advantages of such a short cool down time may be partly offset by the considerably longer cool-down times which may be present for connected housing components. In contrast to the fiber material, these components may not be cooled by the flow of combustion air after the emitter has been turned off, which can lead to a slower temperature decrease.
Fiber emitters may thus be preferable for applications where brief heat-up and cool-down periods take priority over robustness and performance. The disadvantages of fiber emitters described herein can be compensated for to some extent, e.g., by providing a secondary radiation element such as, for example, a screen that may partially shield the combustion chamber. Combustion gases or fumes can first contact the metal or ceramic fibers of the emitter and transfer a certain amount of heat. The fumes may then exit the fiber mesh and exchange further heat with the screen at a lower temperature. The heated screen may thus provide a secondary source of infrared radiation. Also, the screen can reflect some of the heat back toward the fiber, which may intensify combustion on the fiber surface. This intensification can also inhibit separation of the flame from the mesh surface at high temperatures. Such effects can be used to raise the output level of a fiber emitter, e.g., to approximately 44%. The use of a secondary radiation element may also reduce susceptibility of the flame to disturbances from air currents, and thereby reduce the occurrence of coating-color splashes. However, providing a secondary element can introduce additional mass that may be heated up and cooled down, which can reduce the advantages described herein for emitters having a low thermal inertia.
Ceramic emitters can include a perforated ceramic plate which may provide a temperature barrier. The number and size of the holes in the ceramic plate can be configured to provide a higher gas-flow velocity than may be present in fiber emitters. Thus, combustion processes associated with ceramic emitters may exhibit enhanced stability with respect to secondary air currents. The output level of such emitters may also be relatively low (e.g., approximately 44%). A screen may be generally used as a secondary radiation element with ceramic emitters, because heat reflected by the screen can be used to ignite the gas/air mixture as it exits the perforated ceramic plate. Although most characteristics of a ceramic emitter may be comparable to those of a fiber emitter, ceramic emitters can provide a higher power density because refractory ceramic plates can operate at higher temperatures than conventional mesh materials.
Metal emitters can provide an encapsulated combustion chamber which shields combustion and heat-transfer processes from outward influences such as, e.g., secondary air currents and coating-color splashes. This can be achieved by providing steel plate-formed elements into a screen which may be otherwise similar to screens used in other types of emitters. Metal emitters can provide improved convective heat transfer rates for a given volumetric flow rate of gases using an impinging flow. For example, a metal nozzle plate and a vacuum-formed ceramic structure may be provided instead of a perforated ceramic plate. The lower number of gas-flow orifices in such a configuration can produce increased gas-flow exit velocities.
A metal emitter may be configured using impingement plates (e.g., IR radiators) provided in proximity to nozzle orifices. Such configuration may provide improved heat transfer efficiency which may be as high as, e.g., approximately 52%. A vacuum-formed structure that may be used in metal emitters (instead of, e.g., the perforated ceramic plate used in ceramic emitters) can provide improved insulating properties and may be less susceptible to damage by a thermal and/or mechanical shock. A relatively weak, vacuum-formed ceramic insulation can be used in the metal emitters because the metal nozzle plate can provide or increase mechanical stability. However, metal emitters may have a large thermal inertia because they can contain a greater mass of material that is heated during use. Operating procedures may often be adjusted to reduce the negative effects of this larger thermal mass.
High temperature alloys may often be used in applications relating to energy conversion including, e.g., emitters, combustion engines, etc. Desirable properties of alloys in such applications can include, e.g., low weight and good mechanical stability. These properties can allow cost-effective and environmentally compatible operation of facilities such as, e.g., power plants and vehicles including cars, trucks and airplanes. Materials used in high temperature applications can be exposed to aggressive environments, and their performance, mechanical integrity and/or usable lifetime can be impaired by oxidation and/or corrosion. For example, a formation of a stable protective oxide scale on a surface of such materials can protect them at high temperatures. An aluminum oxide compound (alumina, e.g., α-Al2O3), can provide effective protective properties due to its high thermodynamic stability and relatively slow growth rate. Thus a mechanically stable layer of alumina may be desirable to protect materials used in high-temperature applications. Materials which can form alumina can include, e.g., aluminum alloys, intermetallics, superalloys, Fe—Cr—Al alloys and other ferritic high chromium alloys.
The rate of growth and quality of an oxide surface (e.g., alumina) can be a significant factor in determining service life of a high-temperature component. For example, oxide layers may spall (e.g., crack and peel off), and spalling may become more pronounced in thicker oxide layers. A reduction of oxide growth rates on a material under high-temperature service conditions may also reduce the extent of spalling and can increase service life. Growth of a higher quality oxide layer may also reduce the occurrence of spalling, and may further enhance the service life. A loss of oxide layers from spalling can also lead to an additional oxidation of underlying material, and may impair the mechanical integrity of the material.
Improving the emissivity of an metal emitter can enhance energy efficiency and energy conservation, and may lead to improved service lifetimes by limiting oxide formation and reducing the occurrence of spalling. One of the objects of the present invention is to provide materials and methods for making them which overcome some of the above-described deficiencies.

Materials having an enhanced emissivity and methods for making the same

Micropyretics Heaters International, Inc.


A method of isolation of a material with similar immunological properties to CA-195 from human amniotic fluid has been disclosed. This material can be substituted for CA-195 in many processes, for example in the preparation of analytical control materials.

CA 195 is a tumor associated antigen which is identified by means of a monoclonal antibody, CC3C195 (Bray et al., 1987). Normal subjects show very low or undetectable serum CA 195 levels by the currently utilized radioimmunometric method (Gupta et al., 1987; Sundaram et al., 1987; Bhargavva et al., 1987). However, elevated levels are often found in patients with pancreatic, gastric, liver, colorectal and other gastrointestinal malignancies (Bhargava et al., 1987). Sundaram et al., (1987) found CA 195 to be superior in the identification of colon cancer to the classically utilized tumor marker CEA. Serum levels are primarily used for prognosis and progress of the disease. Although the marker shows less utility in the diagnostic phase, it is still used as an adjunct tool. Hybritech Inc. developed a radioimmunoassay for the identification of the antigen utilizing membranes from a human colon tumor. This radioimmunoassay is commercially available through Hybritech Inc. Calibrators and controls for this assay can be obtained from various malignant tissues or a human colon cancer cell line (Fukuta et al., 1987). However, human cancerous tissue is difficult to obtain, costly, and poses numerous safety problems. Obtaining the CA 195 from human cell lines requires tissue culture facilities, presents safety problems, is costly, and relatively small quantities are obtained.
This invention relates to the identification of an CA 195-like material in human amniotic fluid. This material is present in amniotic fluid in a much higher level than that in normal human serum and can be isolated without encountering the difficulties of handling the other human materials. The identification of the CA 195-like material in amniotic fluid has lead to the ability to isolate a material which is much less expensive to produce than the previous materials and methods and which appears to be as useful as the previous materials.
The invention covers not only the identification of the material but also techniques for isolation and use of the CA 195-like material.

Method of isolating a CA 195-like immunoreactive antigen from human amniotic fluid


Storage media rack arranged to simultaneously receive different sizes and types of storage media including front and rear walls, side walls, a bottom wall having steps which connect the bottom wall to the side walls and partition walls arranged perpendicular to the side walls and on the steps such that a first type of storage media can be positioned on or supported by the steps and a second type of storage media can be positioned on or supported by the bottom wall between the steps. Additional partition walls project inwardly from the steps and upwardly from the bottom wall and define slots for receiving the second type of storage media.

Stackable bins for holding articles are well known. For example, stackable bins have been proposed by the same inventor herein, and which are the subject matter of U.S. Pat. No. 5,593,037, issued Jan. 14, 1997, and U.S. Pat. No. 6,062,388, issued May 16, 2000, the entire disclosures of which are incorporated herein by reference.
According to the '037 patent, a stackable bin is provided having reinforcing ribs that perform a two-fold function of reinforcing the walls while also supporting the bin in a stacked arrangement, and in which there is a reliable interlocking arrangement of the bins in the stacked configuration thereof. The bins proposed in the '037 patent have a central partition wall which supports the bins in a stacked relation, divides each bin into two compartments, increases the structural integrity of each bin and locks the bins in a stacked relation. A problem occurs, however, if the bins have a small dimension without the central partition wall. Specifically, inner pressure from the goods in a stacked bin may cause the front ends of the side walls of the bin to move outwardly. This, in turn, can cause instability in the top bin, since the bottom of the top bin stacked thereon could fall down within the side walls of the lower bin.
According to the '388 patent, a stackable bin is provided which includes two spaced apart side walls and a rear wall having opposite side edges connecting rear edges of the side walls together. The side and rear walls are slightly inclined inwardly with respect to a vertical plane such that lower edges of the side and rear wall fit within upper edges of side and rear walls of a lower stackable bin. A bottom wall is connected to lower portions of the side and rear walls. Vertically oriented ribs are arranged on outer surfaces adjacent front and rear edges of the side walls for supporting the stackable bin on the upper edges of the side walls of the lower bin and for increasing structural rigidity of the side walls. At least some ribs include a notch in a lower end to receive the upper edges of the side walls of the lower bin and an outer interlocking tab at a lower end which engages outer surfaces of the side walls of the lower bin when the upper edges of the side walls of the lower bin are received in the notches. In this manner, the side walls of the lower bin are maintained in alignment and outward movement thereof is prevented.
The stackable bins in the '037 patent and the '388 patent generally do not enable easy variations in the size of the object-containing receptacle.


A valve apparatus includes selectively releasable engagement apparatus for operatively connecting an actuator to a valve body of a valve having an operating member extending outwardly from the valve body along an axis of the operating member are provided. The engagement apparatus includes a latch arm extending from the valve side of a base, rather than the actuator side of the base. A plurality of protrusions on the valve body and corresponding mating receptacles on the base resist torque forces on the base. A slot in the base adjacent an edge of the latch arm provides passage for tooling used in forming the base. A base in the form of an adapter allows attachment of an actuator not having a selectively releasable engagement apparatus to a valve body that does include a selectively releasable engagement apparatus.

In valve apparatuses having an actuator operatively connected to a valve stem or other operating member of a valve, it is sometimes desirable to have the actuator be connected to the valve by a selectively releasable engagement apparatus, so that the actuator can readily be removed from or attached to the valve without the use of tools. Commonly assigned U.S. Pat. No. 6,073,907, to Schreiner, et al, and commonly assigned U.S. patent application Ser. No. 10/897,908, to Shike, describe such selectively releasable engagement apparatuses, with the disclosures therein being incorporated herein by reference.
While the apparatuses of Schreiner and Shike work well for their intended purposes, additional improvement is desirable in several areas. It is desirable to modify the apparatuses of Schreiner and Shike, to provide, inter alia: improved manufacturability; additional resistance to torque loads generated during operation of the actuator; reduction of the force that must be exerted on a latch arm for releasing the actuator from the valve; continued compliance with applicable government standards and regulations; and means for adapting actuators that were originally designed for permanent attachment to a valve body so that they can be used with valves designed for use with actuators having features allowing selectively releasable engagement of the actuator to the valve body.

Removable interconnection of an actuator to a valve body


The present invention discloses an improved passive power filter circuit, wherein a rated compensating voltage is provided for the power factor compensating circuit in order to solve the problem of instable power output resulting from that the rated voltage is obtained via bypassing the standby power supply circuit in the conventional technology. Further, in the present invention, a circuit is used to pre-charge two filter capacitors, which are coupled to the DC output terminals of a rectifier, in order to offset the current phase advance or the current phase lag, which the conventional passive power filter circuit cannot solve, and thereby, the power factor is improved.

With the advance of science and technology, people rely on electrical energy more and more, and electrical power has been a dispensable resource for modern life. Before, people were to be contented as long as there was no scarcity of electrical power. However, owing to the uprise of the living standard and the upgrade of the scientific-technological industry, high-quality power supply has been the common target of all countries. In many countries, the traditional industry has been evolved into the high-technology and high-added-value industry, and it means that various precision equipments have been extensively used; therefore, the requirement of electrical power has also changed, and in addition to purchasing the uprise of power supply quantity, users also pay much attention to the quality of power supply. For power supply quantity, building a multitude of power plants is not the only way to solve the power problem; promoting the power factor or the power efficiency of various electrical products is also an effective method. At present, most electrical equipments utilize direct current directly or indirectly; however, owing to generator systems and the need of power transmission, power plants provide alternating current. Therefore, users have to transform alternating current into direct current with AD/DC converter. Owing to low cost and simple structure, the common AD/DC converter is the diode bridge rectifier, which needs only four diodes. Refer to FIG. 2 for the voltage/current waveforms of the diode bridge rectifier. This kinds of circuit has the disadvantages of the great harmonic component of the input current, which causes the serious distortion of the input current waveform, and the phase difference between input voltage and input current, which causes the reduction of power factor, and those disadvantages will further causes power system instability or even power supply interruption. Owing to the characteristics of the internal impedance, the power factors of many current electrical devices are pretty low; however, users demands power supply quality more and more strictly now; therefore, the improvement of the power factor of power supplies become an important subject, and the technology thereof focuses on the power filter circuits of power supplies.
The main function of a power filter circuit is to make voltage and current in-phase and make a load perform like a resistor in order to reduce the harmonic component of input current, and the abovementioned function can be implemented with various circuit designs, which can be divided into passive power filter circuits and active power filter circuits. The industries usually adopt the passive power filter circuit because of its simple circuit and low cost. The passive power filter circuit is primarily composed of passive elements, such as capacitors and inductors, which are used to offset the advance or the lag of the current phase and to reduce the harmonic component of current. When the requirement of power factor is not so strict, the inductor formed of a plurality of gap-spaced silicon steel sheets is coupled to the input terminal in series, or an inductor cooperates with a capacitor to form an LC-type or π-type low pass filter. However, the lower the frequency used, the greater the inductance needed; for example, if the ATX power supply of a personal computer is a passive filter circuit, it is often big and heavy, and the best power factor thereof is only as high as 70%. Thus, for a strict power factor demand, the passive power filter is not suitable.
In order to improve the inferior power factor of the passive power filter circuit, the conventional technologies adopt a compensating circuit, installed to the original passive power filter circuit. Referring to FIG. 1, the conventional passive power filter circuit comprises: an overload protection circuit 11, a surge current-limiting circuit 12, a first filter circuit 13, a power factor regulating circuit 14, a rectifier 15, a power factor compensating circuit 16, a second filter circuit 17, a power source push circuit 18, a main voltage transformer 19, an output rectifier 20, a power source feedback circuit 21, a standby power supply circuit 22, and output filter circuits 23, 24, 25. The power factor compensating circuit 16 is composed of two diodes D4, D5 connected in series and a capacitor C8. The power factor compensating circuit 16 needs a voltage supply to provide a rated voltage for the capacitor C8 in order to pre-charge filter capacitors C5, C6 and obtain a compensating effect; therefore, in addition to being a standby power source and providing power for a control IC 211, the standby power supply circuit 22 bypasses a loop from the cathode of the diode D6 thereof to provide power for the power factor compensating circuit 16 so that the power factor compensating circuit 16 can charge the capacitor C8, and thereby, the objective of compensating power factor is achieved, and the output power factor is improved. However, the power factor compensating circuit 16 can only obtain an unchangeable rated voltage via the supply voltage bypassed from the standby power supply circuit 22 to the power factor compensating circuit 16; further, the control IC 211 of the power source feedback circuit 21, which usually needs a specified power that cannot be altered arbitrarily, will be interfered owing to the bypass of the standby power supply circuit 22; thus, the power source feedback circuit 21 may malfunction, and the power supply output may become instable.
In conclusion, the passive power filter circuit has the disadvantages of noise, working frequency vibration, and low power conversion efficiency, and the passive power filter circuit installed with the conventional compensating circuit still has the problem of instable power output. Therefore, there is still room to improve the passive power filter circuit in spite of its extensive application.


A networking method of single frequency network in a TD-SCDMA system includes the steps of: (1) deciding a networking configuration scheme by a universal mobile telecommunications system terrestrial radio access network (UTRAN), (2) based on the decided networking configuration scheme, configuring an intra-frequency cell info list information element and an inter-frequency cell info list information element in system information and measurement control messages by the UTRAN, (3) transmitting signals over a servicing area by the UTRAN, and (4) receiving the system information and measurement control messages by a user equipment (UE) from the UTRAN, acquiring working mode configuration information of each frequency and each timeslot of a serving cell and neighboring cells, and judging whether there are duplicated cell information elements in the intra-frequency cell info list information element or the inter-frequency cell info list information element.

Traditional broadcasting networks, such as analog telecast systems, are Multi-Frequency Networks (MFN). These networks operate several transmitters each on different frequencies in different service areas to avoid interfering with one another. In MFN mode, a TV channel requires a large amount of frequency bandwidth to reach a large coverage and thus results in low spectral efficiency.
As spectrum resources become scarce, Single Frequency Network (SFN) becomes a hot spot. An SFN is created when all the transmitters in a network service area operate on the same carrier frequency. In an SFN, multiple transmitters over an area simultaneously transmit identical signals (simulcast) on the same physical resource (time, resource block). From the receiver (for example, the terminal) point of view, the received signal is indistinguishable from a single (cell) transmission. Delayed versions of the signal due to the multi-cell transmission are observed at the receiver. These delayed versions may be treated as multi-path components of the signal and can be combined in the receiver. By doing so, inter-cell interference can be transformed into useful signal energy, and the distribution of carrier to interference ratio across the coverage area is improved.
SFNs are primarily defined in terms of coverage areas (SFN areas), i.e., the set of cells that are participation in the simulcast transmissions. The cells and content in each SFN need to be tightly synchronized and coordinated.
SFN can work with multi-carrier modulation technique such as Orthogonal Frequency Division Multiplexing (OFDM). OFDM has been introduced into the Long Term Evolution (LTE) of 3GPP standards. The frame structure of LTE TDD (time division duplex) mode is similar to that of TD-SCDMA.
In CDMA systems operating in the SFN mode, signals from different base stations may be treated as multi-path components. This leads to a higher demand on mobile receivers to tolerate a higher delay spread of multi-path signals whose power levels are similar to that of the main-path signal. As a result, the time synchronization and the transmission synchronization among different base stations can have a significant impact on the receiving ability of mobile receivers.
Originally, streaming media is the transmission method for transmitting television programs over a mobile communication system. Compared to 2.5G techniques, 3G techniques provide higher data rate and support for higher spectral efficiency. 3G brings new chances to develop mobile television.
MBMS (Multimedia Broadcast Multicast Service) is introduced in 3GPP R6 in order to provide more multimedia services than streaming media. The main evolution of MBMS include a new network element of BM-SC, upgrade of existing network elements of PS domain for new MBMS interfaces (such as Gmb), new Channels (such as MICH, MTCH/MCCH/MSCH), new physical procedures (such as FACH channel selection combining, PTM and PTP handover), and new service procedure (such as subscription).
On the side of user equipment (UE), MBMS inherits from existing 3GPP standards as much as possible, except for a higher processing ability of base band.
TD-SCDMA is a part of 3G standards, which is an N-frequency system, i.e., a type of multi-carrier system. The number of carriers is N in a cell, and one of these carriers is the primary frequency, and the others (number of N−1) are secondary frequencies. The frequency used by UE is named the working frequency.
FIG. 1 shows a simplified example of a typical mobile communication system. The system has cells 1001-100Z (100), each cell composed of a NodeB (Base Station) 1011-101Z (101), and a number of UE 1021-102K (102). Each UE 102 connects with NodeB 101 in a serving cell 100 by a radio channel to communicate with other network elements. The direction from UE 102 to NodeB 101 is named the uplink, and from NodeB 101 to UE 102 is named the downlink. NodeB 101 is controlled by RNC (Radio Network Controller) 103. Together, NodeB 101, RNC 103, and some other network elements constitute the UTRAN (U MTS Terrestrial Radio Access Network) 110.
FIG. 2 shows the frame structure of a TD-SCDMA system. The structure is specified by 3GPP Technical Specification 25.221. The chip rate of TD-SCDMA is 1.28 Mcps. The time duration of each Radio Frame 200 is 10 ms identically divided into two sub-frames, 2010-2011, (201). Time duration of each sub-frame is 5 ms, i.e., 6400 chips. A sub-frame includes 7 Timeslots (from TS0 to TS6) 2020-2026, two pilot timeslots that are downlink pilot timeslot (DwPTS) 203 and uplink pilot timeslot 205, and a guard period (GP) 204. Furthermore, TS0 2020 is used for downlink that carries only system broadcast channel and other downlink traffic channels. The six timeslots, from TS1 to TS6 2021-2026, are used to transmit downlink and uplink traffic channels. UpPTS 205 and DwPTS 203 are used for acquisitions of uplink and downlink synchronization, respectively. Time duration of these timeslots, from TS0 to TS6 2020-2026, are 0.675 ms, i.e., 864 chips. Each timeslot includes two data parts (Data Part 1 208 and Data Part 2 210), and a 144-chip long training sequence (midamble 209). Midamble 209 is important for channel estimation, cell identification, and other procedures in TS-SCDMA. DwPTS 203 includes a 32 chip long GP 211 and a 64 chip long downlink sync code (SYNC-DL) 206. UpPTS 205 includes a 128 chip long uplink sync code (SYNC-UL) 207. There is a switch point 212 in the six timeslots from TS1 to TS6 2021-2026 and is located between TS3 2023 and TS4 2024 when there are 3 uplink timeslots and 3 downlink timeslots.
In an N-Frequency TD-SCDMA system, over Secondary frequencies, TS0 2020 and DwPTS 203 aren't transmitted in order to reduce co-channel interference between adjacent cells because of the omni transmission of TS0 and DwPTS signals without beam-forming.
FIG. 3 shows an example of a typical N-Frequency networking schematic, which is a 5 MHz networking with N equal to 3. There are 3 carriers in each cell, and one is the primary frequency 301, and the other two are secondary frequencies (302 and 303). TS1, TS2 and TS3 (2021-2023) are uplink timeslots; TS4, TS5 and TS6 (2024-2026) are downlink timeslots. Furthermore, the uplink/downlink ratio is configurable.
In an N-frequency scheme, in order to reduce co-channel interference, secondary frequencies (302 and 303) do not transmit DwPTS 203 and do not transmit pilot channel over TS0 2020. Frequency planning should be used in order to avoid adjacent cells having the same primary frequency. Techniques such as frequency planning, antenna locating, and sector area dividing should may be used. The main frequency of the adjacent areas should be different.
In TD-SCDMA, smart antenna technique is important. The transmission methods of signal, such as omni transmission of broadcasting or transmission with beam-forming, can lead to different networking methods.
In existing 3GPP or TD-SCDMA technical specification, according to the status whether it is same as the working frequency of UE, a frequency is categorized as intra-frequency or inter-frequency. In the messages that UTRAN sends to UE, such as Measurement Control or System Information message, there are two frequency measurement lists—"Intra-frequency cell info list" and "Inter-frequency cell info list. Each element in these lists indicates "cell info" information element (IE). In addition to IEs in "Intra-frequency cell info list", elements in "Inter-frequency cell info list" includes a "Frequency info" IE. Therefore, the corresponding frequency of all "cell info" IE in "Intra-frequency cell info list" is the same as the working frequency of UE. There is no frequency information in "cell info" IE.
FIG. 4 shows an example of UTRAN sending the information of serving cell and neighboring cells to UE in different states. UTRAN 110 builds a SYSTEM INFORMATION 401 message and broadcasts the message. UE 102 receives this message in idle mode, and then updates local stored information according to the received message; if necessary, UE 102 can measure the Measurement Quantity specified by the message. UTRAN 110 also sends MEASUREMENT CONTROL 402 message to offer information of serving and neighboring cells to UE 102 in connection mode.
The SYSTEM INFORMATION 401 message and MEASUREMENT CONTROL 402 message include measurement object list, measurement quantity, and other information. Such information is classified into inter-frequency list and intra-frequency list. Tables 1˜4 show some common IEs in the two messages in existing 3GPP and TD-SCDMA technical specifications.
Table 1 and Table 2 show parts of "Intra-frequency cell info list" IE 30 and "Inter-Frequency cell info list" IE 40, which inform UE 102 of the objects list of intra-frequency and inter-frequency, respectively.
TABLE 1Parts of Intra-frequency cell info list IEInformationElement/GroupSemanticsName 30MultiType and referencedescriptionNew intra-1 tofrequency<maxCellMeas>cells 31>Intra-Integerfrequency(0 . . . <maxCellMeas>−1)cell id 32>Cell info 33
TABLE 2Parts of Inter-frequency cell info list IEInformationElement/GroupSemanticsName 40MultiType and referencedescriptionNew inter-1 tofrequency<maxCellMeas>cells 41>Inter-Integerfrequency(0..<maxCellMeas>−1)cell id 42>Frequencyinfo 43>Cell info 33
IE 30 is a structure array whose dimension is identified by "New intra-frequency cells" IE 31. Each element in the array includes two IEs, "Intra-frequency cell id" IE 32 and "Cell info" IE 33. The structure of IE 40 is similar to IE 30 while the main differences between them is that there is a "Frequency info" 43 IE in IE 40.
As to TD-SCDMA system, value of "maxCellMeas" equals 32. Table 3 shows the TDD parts of "Cell Info" IE 33 that pertains to cell information. "Primary CCPCH info" IE 51 provides information of P-CCPCH channel; "Timeslot list" IE 52 provides information of timeslot count maybe be measured by UE; "Timeslot number" IE 53 then indicates which timeslot should be measured.
Table 4 shows TDD parts of "Primary CCPCH info" IE 51. "Cell parameters ID" IE 61 provides identification information of primary frequency of a cell. The identification information is important for UE to distinguish the basic Mid-amble code and scramble code of a cell.
TABLE 3TDD parts of Cell info IEInformation Element/GroupType andSemanticsName 33Multireferencedescription> Primary CCPCH info 51> Primary CCPCH Tx power>Timeslot list 521 to <max TS.>>Timeslot number 53Integer(0 . . . 6)
TABLE 4TDD parts of Primary CCPCH info IEInformation Element/GroupSemanticsName 51MultiType and referencedescription>>Cell parameters ID 61Integer(0 . . . 127)
In TD-SCDMA systems, the following technical problems of applying SFN mode might be encountered:
The timeslot of a cell in SFN mode is the same as that of its neighboring cells. Thus, the timeslot should be transmitted unidirectionally and without beam-forming. Therefore, the same timeslot of neighboring cells could not work on an N-frequency mode for co-channel interference.
The "Cell parameters ID" of a timeslot in SFN mode configured by a cell must be the same as its neighboring cells. And the other timeslots of this cell working on N-frequency mode should apply cell-specific "Cell parameters ID". Thus, there are maybe two or more different "Cell parameters ID" in the same cell. However, a "Primary CCPCH info" IE 51 could only contain one "Cell parameters ID" IE 61.
UE could not distinguish if a timeslot is in SFN mode or in N-frequency mode.
In summary, existing N-frequency scheme of TD-SCDMA is not suitable for mobile TV services. SFN scheme can provide higher spectral efficiency. And existing messages between UTRAN and UE may not be suitable for information transmission of SFN configuration.

Networking method of single frequency network in TD-SCDMA system


A wafer-scale probe card for temporary electrical contact to a sample wafer or other device, for burn-in and test. The card includes a plurality of directly metallized single-walled or multi-walled nanotubes contacting a pre-arranged electrical contact pattern on the probe card substrate. The nanotubes are arranged into bundles for forming electrical contacts between areas of the device under test and the probe card. The bundles are compressible along their length to allow a compressive force to be used for contacting the probe card substrate to the device under test. A strengthening material may be disposed around and/or infiltrate the bundles. The nanotubes forming the bundles may be patterned to provide a pre-determined bundle profile. Tips of the bundles may be metallized with a conductive material to form a conformal coating on the bundles; or metallized with a conductive material to form a continuous, single contact surface.

Large numbers of identical integrated circuits (ICs) such as microprocessors, memory devices, and digital signal processing devices are generally fabricated on a silicon wafer. Due to defects that may occur during fabrication, each IC (or "die") on the wafer is typically separately tested or sorted by test equipment such as automatic test equipment (ATE) and probe cards. Probe cards may be capable of making temporary conductive contact to a single die or a small cluster of dice, and in limited applications, whole wafers. The ATE may complete the wafer-level test by sequentially stepping a probe card through the individual die or die-cluster locations across the wafer until all dice on the wafer have been tested. The test signals are provided to each die through input or input/output bond pads on each die, and the test results are monitored on output bond pads. The good die that pass the wafer-level test are then singulated and packaged typically by electrically connecting the bond pads to the package with bond wires, solder balls, or other contact structures. To accommodate the bonding wires or solder balls, the bond pads are generally very large relative to the circuit elements of the integrated circuit. Typical bond pad sizes are on the order of 100 um (micrometers)×100 um. The bond pads are also typically aligned in regular patterns such as peripherally along the outside perimeter of the die, in a grid pattern, or in a column or row generally through the center of the die (lead-on-center).
While wafer-"level" test is well established in the industry, there is no accepted means for wafer-"scale" test or wafer-"level" "burn-in." Moreover, established probe technologies are limited to device AC testing at or below 1-2 GHZ frequencies. The present invention overcomes these limitations.
The bond pads allow each die separately to be functionally tested for specified timing parameters (AC parameters), DC parameters, and overall operation. When probing chips or wafers, it is important to have a planar set of probe contacts so that each probe contact can make simultaneous electrical contact to a respective chip contact. It is also important to have the contacts on the wafer coplanar. Typically, if the tips of the probe contacts do not lie in approximately the same plane, or if some of the contacts on the wafer are out of plane, more force must be exerted on the back of the probe in an effort to engage all of the probe contacts with the chip contacts. This typically leads to non-uniform forces between the tips of the probe contacts and the wafer contacts. If too much force is placed on any one probe contact, there is a potential to degrade the chip contacts, which can detrimentally affect device performance and consequently affect device yield. Planarity and uniform probe contact force are also important in order to have approximately the same ohmic resistance across all of the probe contacts so that the electrical signals have approximately the same level of integrity. Loss in signal integrity can detrimentally affect device performance and consequently affect device yield. In most cases, there can be hundreds of thousands of contacts across a single wafer. Maintaining similar ohmic probe to chip contact resistance is especially important for accurate testing of chips that are designed to be run at high speeds. For such high speed chips, it is also important to control the impedance of the probe tester (resistance, capacitance & inductance) as a whole to maintain the integrity of the electrical signals to allow the desired range of parametric testing.
In a conventional manufacturing process flow, following packaging, the ICs are subjected to what is referred to in the industry as a Burn-In (BI) process, in which the ICs are electrically activated simultaneously while subjected to temperature cycling over a period of hours to days. This burn-in process is used to accelerate and screen early life failures of the ICs, thus ensuring high reliability of the component. In this conventional process, the packaged ICs are inserted into an electrical socket which makes contact to the IC package pins. The burn-in sockets are mounted to large burn-in boards which are loaded into large thermal cycling ovens which can handle very large volumes of ICs. The burn-in sockets are designed to take advantage of the large pin spacing and pin size in comparison to the finer bond-pad pitch and size as described previously. Although at a very high cost to the electronics industry, the relatively large pin size and spacing and relatively low pin count and high planarity found within a single die, has enabled the single-die-per-socket IC burn-in approach to be widely adopted.
One disadvantage of the current approach to IC burn-in is high cost. Due to the requirement for custom burn-in sockets for each new IC or IC package design, short product design lifetime (as little as 12 months) and the long burn-in cycle time, the burn-in process requires a huge investment in burn-in sockets and processing time to support the volumes of ICs which are manufactured today.
Another disadvantage of this method of IC burn-in is that it commonly must be done only after packaging of the IC or in a few instances, to singulated bare-die. While this technique can be used for conventional single-die packaging, or multi-chip packaging, this technique cannot be used when die-to-wafer or wafer-to-wafer integration of ICs is required. To enable die-to-wafer or wafer-to-wafer integration, a means to do Wafer-Level-Burn-In and Test (WLBI, WLBIT) has been proposed.
While acceptable means for wafer-level single/clustered die test and single-die burn-in have been employed, the industry has not yet found an acceptable means of employing wafer-"level" burn-in and wafer-"scale" test.
Wafer-level burn-in has not been adopted because of the lack of an acceptable solution to the problems described above, and in addition:
1. Difficulty in achieving satisfactorily uniform ohmic resistance across the wafer.
2. Due to ohmic resistance non-uniformity, and lack of contact redundancy per pad, there is no way to ensure all die are being activated, and hence, there is no way to ensure all die have been adequately burned-in, thus allowing potential early life failures to escape into the field. Because there are tens of thousands of contact pads on a wafer, which all must be contacted, this is a major problem.
3. High compressive forces are needed to compress prior-art micro-spring probe contacts in order to make good, low-ohmic resistance contact. This high compressive force damages the IC bond pad, or worse can damage the IC's dielectric layers which can be extremely fragile, especially with the recent adoption of low-k dielectric materials. In the case of bumped ICs used for chip-scale packaging, no damage to the bump surface is allowed, preventing the use of micro-spring probe cards altogether. In specific applications, there are probe contacts which contact and cut into two opposing sides of an interconnect bump, similar in principle, to a pair of tweezers. This configuration is limited to only large ball sizes/pitches such as in Ball-Grid-Array (BGA) packaged ICs.
4. When multiplying the high compressive force per contact by tens of thousands of contacts, the mechanical fixturing required to maintain this high compressive force between the wafer and probe card would be excessively large, heavy and costly for wide use in wafer-level burn-in, where ICs must be cycled for up to days within a temperature cycle oven.
5. Excessive initial cost and damage-induced cost associated with intricate, fragile mechanical structure based probe cards, such as micro-spring or membrane or Micro-Electro-Mechanical-Systems (MEMS) based probe cards, has prevented these prior-art technologies from being accepted.
What is needed is a method for wafer-level burn-in and test which resolves these problems, and provides advantages over other prior approaches proposed. These prior approaches include:
1. Epoxy-ring cantilever spring contact probe cards—use limited by variation in contact force, limited contact point aerial density due to the space required for the epoxy ring, high cost intricate manual fabrication, high electrical inductance, and IC pad pitch or pattern limited to low density pad arrays. This prior art is also known to cause severe damage to IC pads, referred to in the industry as "pad scrubbing",
2. Micro-spring probe-cards fabricated through either mechanical formation or electroplated micro-mechanical assembly—use limited by high cost, susceptibility to damage, limited to lower bond pad aerial density devices due to the minimum achievable micro-spring size, limited aerial coverage (cannot achieve full wafer-scale probing), limited or no repair-ability, susceptibility to causing IC bond pad damage through micro-indentation. Micro-indentation is unacceptable for bumped ICs, especially those used in chip-scale packaging.
3. MEMS probe card having micro-machined mechanical probes bonded to rigid substrates. Limited range or amount of probe compliance (cannot scale to full-wafer probing due to insufficient range of compliance), high cost due to many intricate fabrication steps, limited aerial coverage difficulty to repair, susceptibility to causing IC bond pad damage.
4. Membrane probe cards having micro indenting tips deposited onto the surface of a flexible circuit board—limited probe compliance, high cost, no full-wafer probing capability, high cost, limited probe contact force resulting in poor IC pad contact reliability.
Each of these methods is limited to single or small-area probing due to the highly complex, intricately assembly of microstructures associated with their application to probe cards. Due to their complexity, each prior-art method suffers from low yield and associated high cost when attempts are made to fabricate them in large arrays or at high aerial densities.

Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures


The invention provides a stabilizing platform, a diaper changing pad which includes the stabilizing platform and a diaper changing bag.

This invention offers an alternative to conventional diaper changing pads and tables. Traditional changing pads offer contour sides and a single safety strap to hold the baby in place, while other pads offer no safety apparatus at all. As children grow larger this can lead to various problems. Children tend to maneuver out of the safety strap possibly leading to an increase opportunity for injury, or they may flip over making it impossible to change the child quickly, effectively and hassle free.
When using traditional changing pads away from home, one finds that they can be very cumbersome. Many traditional pads do not fold, or if they do, the outside, or changing area, is exposed to the environment. Still other changing pads are convenient to travel with, but do not offer stability or safety. The present invention is directed to overcoming these deficiencies.


A convertible having a roof is provided with stiff parts, at least one rear roof part, and an upper roof part, which is mounted in front of the rear roof part relative to the direction of travel in the closed state and is located above a passenger area. The upper roof part of the convertible encompasses an at least substantially transparent plate member which can be displaced counter to the direction of travel like a sliding roof; is held parallel to a rear window that is embraced by the rear roof part in the open position thereof; and can be moved along with the roof in the parallel position in order to be opened and closed.

1. Field of the Invention
The invention concerns a convertible.
2. Description of the Related Art
DE 42 03 228 C2 describes a convertible roof with a rear roof part that comprises a rear window and two lateral frame parts arranged in front of the rear roof part in the direction of travel of the vehicle. A front roof part that can be moved longitudinally relative to the two lateral frames is guided on these frames. This front roof part can be moved like a sunroof in the lateral guides, and it remains completely in the guides even in its open position. This limits the size of the roof opening formed by the sunroof opening. To allow the roof to be lowered further, the rear roof part is first swung down; only then can the upper roof part that encloses the sunroof open and rest on the rear roof part. A mechanism for this is expensive. This requires at least one additional support of the lateral frame parts relative to the automobile body, here with the B-posts 6 and the C-posts 9 actually two supports on each side of the vehicle, which reduce the interior space and reduce visibility. The opening of the roof into the open position and the closing of the roof from the open position take a great deal of time.


A printing apparatus that facilitates an operation of replacing a printing-agent housing container is provided. In the printing apparatus, when a cover is closed, a LED and a light receiving section can acquire information on whether or not an ink tank is mounted on a carriage. Furthermore, when the cover is opened, the light receiving section can move in a retracting direction from an opening.

1. Field of the Invention
The present invention relates to a printing apparatus equipped with a replaceable printing-agent housing container.
2. Description of the Related Art
Printing apparatuses may be based on a printing system such as an inkjet system or a laser beam system. These printing apparatuses may be equipped with printing-agent housing containers that house printing agent such as ink or toner and perform printing using the printing agents housed in the printing-agent housing containers. In such a printing apparatus, when the printing agent housed inside the mounted printing-agent housing container is consumed and exhausted, the printing agent is replaced with a new one.
Furthermore, the printing apparatus may be configured such that the mounted printing-agent housing containers are movable. Japanese Patent No. 4585927 discloses an ink jet printing apparatus in which a carriage and an ink tank are movable along the thickness direction of print media.
In the ink jet printing apparatus disclosed in Japanese Patent No. 4585927, the heights of the ink tank and a print head from a print medium are varied in accordance with the thickness of the print medium. When plain paper is printed, the carriage, the ink tank, and the print head are disposed at relatively low positions. When an optical disc is printed, the carriage, the ink tank, and the print head are disposed at relatively high positions.


An apparatus for generating a spectral distribution. This apparatus contains a light source and a single filter. The single filter is comprised of a color correcting filter material and a neutral density filter material. When the apparatus is adjusted, the spectral distribution of the light which passes through it varies continuously, but the brightness and/or irradiance of such light is substantially constant.

Many attempts have been made to simulate natural daylight by artificial means. It has been claimed, with some justification, that natural daylight is the preferred lighted environment. Thus, for example, in form 01128809L 150M (1990), the Duro-Test Corporation (of 9 Law Drive, Fairfield, N.J.) states that a good simulation of natural daylight " . . . encourages people to perform as never before because it promotes good vision . . . People see better and work better . . . " Thus, in form 0090 (1988), the Duro-Test Corporation states that light which " . . . simulates natural daylight . . . " is " . . . the perfect interior lighted environment . . . ."
One of the recognized experts on the use of color and its effects on people, Mr. Carlton Wagner, has published a book entitled "Beyond Beautiful" (The Wagner Institute for Color Research, Santa Barbara, Calif., 1990). At page 38 of this book, he recommends that, when women are evaluating the colors of objects, they should "arrange them . . . artificial means. It has been claimed, with some under a good light source (daylight or bright incandescent lighting is best . . . ").
The standard spectrum for daylight is referred to in D. L. MacAdam's "Color Measurement: Theme and Variations" (Springer-Verlag, N.Y., 1981.) In this book, the author refers to the CIE's D65 illuminant.
It is desirable to be able to simulate other daylight spectra, besides the D65 spectra. Thus, as is well known to those skilled in the art, the spectra of daylight will vary depending upon the daylight, upon atmospheric conditions, and solar altitude; see, e.g., S. T. Henderson's "Daylight and Its Spectrum," Second Edition (John Wiley & Sons, New York, 1977).
There are devices known to the prior art which are capable of generating different spectral distributions; see, e.g., the device disclosed in German patent 1,744,824 of Karl. However, as the spectra generated by these devices change, the intensity of such spectra changes.
For many applications, it is desirable that a sample be viewed under different spectral distributions at a substantially constant irradiance. Thus, for example, A.S.T.M. Standard D-1729-60T, entitled "Visual Evaluation of Color Differences in Opaque Materials," is often used for color matching of painted surfaces. The A.S.T.M. Standard requires that a specified opaque surface is to be viewed under different spectral conditions and that the irradiance of each of such condition be substantially constant. Thus, in section 5.1.2 of the Standard, it is provided that "For critical evaluation of color differences of materials of medium lightness, the illumination at the center of the viewed area shall be 100 to 125 foot-candles . . . In viewing very light materials, the illumination may be reduced to as low as 50 foot candles . . . and for the very dark materials may be increased to as much as 200 foot candles . . . "
The device of the Karl patent is not capable of producing different spectral distributions at a substantially constant level of irradiance.
The prior art repeatedly suggests that, although different spectral distributions may be produced from a single light source and a multiplicity of filters, such distributions will have substantially different irradiances. Thus the "Kodak Color Darkroom Dataguide" (published by the Photographic Products Group, Eastman Kodak Company, Rochester, N.Y. 14650) discusses the adjustment one must make when developing prints using a single light source and different filters. At page 48 of this dataguide, in a paragraph entitled "Exposure Adjustments for Filter-Pack Changes," it is taught that "The overall density of a print is affected by changes in the number and density of the filters in the filter pack . . . For example, if you add 10M to the filter pack. increase exposure by 10 percent." The filter pack referred to in this quotation is mentioned at page 39 of the dataguide, in a paragraph entitled "Kodak Color Printing (CP) Filters" which states that "You place these acetate filters between the light source and the negative . . . When you change the filter pack, you can calculate adjustments from the filter factors for the filters you add or remove."
Not everyone who uses darkroom apparatus has both the expertise, the time, and the patience to calculate correction factors for the differing spectral distributions which must be used to correctly expose a photographic print. Not everyone who uses color matching apparatus realizes the importance of viewing the objects with spectra which have substantially constant irradiances.
In applicant's U.S. Pat. No. 5,079,683, an apparatus is provided which is able to automatically make the adjustments suggested in the Eastern Kodak dataguide. However, the device of this patent is relatively large, must contain a several fans to cool the optical components, and contains a a relatively large and expensive filter extrusion device. Furthermore, the device of this patent is not readily able to illuminate a large area. Because of these factors, this device also is relatively expensive to manufacture and its markets are limited.
It is an object of this invention to provide an apparatus which is as useful in every respect as the device disclosed in U.S. Pat. No. 5,079,683 (the disclosure of which is hereby incorporated by reference into this specification) but which, additionally, is less expensive to produce, less cumbersome, does not require as much cooling, and produces both more illumination and a broader area of illumination.
It is another object of this invention to provide an apparatus which will allow a user to produce spectra in which either the intensity is varied and/or the spectral content is varied.
It is yet another object of this invention to provide an apparatus is relatively lightweight, simple, and economical to produce.

Apparatus for producing light distributions


An apparatus for the mechanical and orificial coupling of a conventional liquid gas fuel supply container and/or supply outlet fixture to a control valve and/or similar secondary fuel outlet port. The coupling apparatus comprises a shaft modifying the inlet of a conventional control valve, which provides an extended port for orificial connection, and a plastic collar which intercalates into a conventional recessed supply outlet orifice fixture. The collar is first engaged with the supply outlet fixture which then makes a socket for the intercalation of the control valve shaft in a quick and secure bayonet fashion. No screw threads are used in any part of the engagement mechanisms.

1. Field of the Invention
The present invention relates to couplings for structurally connecting and orificially connecting gas and/or liquid gas supply containers to control valves and/or other outlet ports, and more particularly to couplings used with portable and/or disposable liquid gas cannisters.
2. Brief Description of the Prior Art
The predominant world wide method for mechanically connecting a fuel supply control valve to a portable supply container is to use mating screw threads. Screw threads are also the predominant means of connection for larger fuel containers such as a welding tanks or large propane tanks, and these larger containers also have control valves governing outlet orifices to which a regulator can be attached when the valve is shut off. However, smaller and especially disposable fuel containers have very simple orifice valves which allow the escape of fuel as soon as insertion of a male needle valve orifice typical of the conventional control valves available occurs.
These conventional control valves made for the portable and disposable type fuel cannisters normally have a throat surrounding their inlet needle orifices, with internal screw threads that receive the external screw threads of a raised neck surrounding the outlet orifice of the cannister. When the control valve is screwed onto the cannister the seals about the needle valve orifice and the cannister orifice come into contact as the orifices connect with continued screwing of the threads. This is exemplified by commonly used portable propane torches, portable gas stoves and the like.
In addition to some of the more common disadvantages of using screw threads for repeated engagement or disengagement of parts such as the speed and ease of the connection, or the wearing, stripping, corroding, or other compromising of the screw threads mechanical integrity, there are problems specific to the type of connection presently discussed.
When a conventional fuel control valve is screwed onto a conventional fuel cannister there is a period when the connection of orifices is occurring but not sealed. By varying the pitch of the threads this period can be minimized, but not eliminated. Therefore leakage of fuel during both the engagement and disengagement of the control valve, as well as possible sustained leakage caused by incomplete screwing, or inadvertent unscrewing of the control valve constitutes a serious and possibly dangerous disadvantage to using screw threads for this type of connection.
An alternative coupling solution is used by Camping Gaz International.TM., and disclosed in French patent no 8 701 097, and European patent no. 0 278 873, the named inventor is Daniel Finand. Finands cannister does not use screw threads. As exemplified by the Camping Gaz International.TM. CV 470 cartridge, DOT - E 9758, CTC SP 2739, the cannister orifice is in a raised nipple which is centered in a cylindrical throat recessed into the cannister. This throat is characterized by an involuted lip around its rim, and a depression or groove formed beneath the rim around the interior perimeter of the throat.
Finands corresponding control valve has a probiscus-like extension of the control valve inlet, housing the needle valve orifice near its end. This inlet stalk has external screw threads which mate with internal screw threads in a large plastic coupling member. This plastic member is a cylinder which by turning on the screw threads moves up or down the inlet stalk. It is characterized by a large radially extended wheel, which has vertical ridges around its perimeter for manual gripping, and turns the entire plastic member about the inlet stalk. The bottom of the plastic cylinder within the wheel is cut into four sections below the screw threads that form four elastic prongs which are juxtaposed to the lower portion of the inlet stalk. The lowermost end of the inlet stalk has a flared back rim just above the lowermost ends of the four plastic prongs, which also have corresponding angled lips facing the inlet rim. Each prong has on its outer side, opposite the angled lips, a projected angular ridge.
The coupling works by setting the control valve onto the cannister so that the plastic prongs are beneath the inlet rim and easily inserted beneath the inside lip of the throat. Whereupon as the plastic wheel is turned the plastic member moves up the inlet stalk pulling the angled ends of the prongs against the flared rim of the inlet stalk. This forces the elastic prongs outwardly and the projected angular edges of the prongs key into the annular groove beneath the involuted lip of the cannister throat. With the prongs caught in the throat of the cannister, continued turning of the wheel forces the inlet stalk down over the cannister outlet nipple. The needle valve inside the inlet stalk is thusly inserted into the cannister outlet orifice.
The problem with Finands coupling solution is that screw threads still drive the engaging and disengaging mechanisms. Accordingly, leakage is no less a problem if not worse than the conventional solutions, in that the plastic screw threaded portion has even more of a propensity to partially unscrew during normal use and movement of the parts. Therefore the need is evident for a coupling mechanism where engagement and/or disengagement is not driven by the turning of screw threads.