A cathode ray tube with a central axis includes a panel with an inner phosphor screen, and a funnel connected to the panel. The funnel has a cone portion with a neck sealing side, and a body portion extended from the cone portion to the panel. A deflection yoke is externally mounted around the funnel. A neck is connected to the neck sealing side of the cone portion. An electron gun is mounted within the neck. The funnel is structured to satisfy the following condition:

The present invention relates to a cathode ray tube (CRT) and, more particularly, to a CRT that can reduce power consumption for deflecting electron beams by improving the structural characteristics of a funnel.
Generally, CRTs include a panel having an inner phosphor screen, a funnel having a cone portion, and a neck having an electron gun which are sequentially connected to each other. A deflection yoke is mounted around the cone portion of the funnel to form horizontal and vertical magnetic fields there. In this structure, electron beams emitted from the electron gun are deflected through the horizontal and vertical magnetic fields from the deflection yoke, and land on the phosphor screen.
Recently, the CRTs have been employed for use in highly sophisticated electronic devices such as high definition television (HDTV) and OA equipment. On the one hand, in these applications, the consumption power of the CRT should be reduced to obtain good energy efficiency, and the leakage magnetic field due to the power consumption should be reduced to protect the user from the harmful electronic waves. In order to meet these requirements, the consumption power of the deflection yoke, which is the major consumption source, should be reduced in a suitable manner.
On the other hand, in order to realize high brightness and resolution of display images on the screen, the deflection power of the deflection yoke should be increased. Specifically, higher anode voltage is required to enhance the brightness of the screen and correspondingly, higher deflection voltage is required to deflect the electron beams accelerated by the increased anode voltage. Furthermore, higher deflection frequency is required to enhance the resolution of the screen, and this accompanies the requirement of increased deflection power. In addition, in order to realize relatively flat CRTs for more convenient use, wide-angle deflection should be performed with respect to the electron beams. This also accompanies the requirement of increased deflection power.
In this situation, there is a need for a technique that allows for CRTs that retain good deflection efficiency while constantly maintaining or reducing the deflection power.
For this purpose, conventionally, the deflection efficiency is increased by positioning the deflection yoke more adjacent to the electron beam paths. The positioning of the deflection yoke is usually achieved by reducing a diameter of the neck. However, in such a technique, as the diameter of the neck is reduced, the size of the electron gun to be mounted within the neck and the curvature of the funnel to be connected to the neck should be correspondingly varied, and this results in complicated processing steps. Furthermore, in such a structure, the focusing characteristic of the electron gun is poor.
Alternatively, in order to reduce the deflection power consumption, it has been suggested that the diameter of the neck be constantly kept to be about 29.1 mm, and instead of reducing the diameter of the neck, this technique reduces the neck-sided outer diameter of the funnel. However, in such a structure, the electron beams applied onto the screen corner portions are liable to bombard the inner wall of the funnel adjacent to the neck. This phenomenon is usually called the xe2x80x9cbeam shadow neckxe2x80x9d or briefly the xe2x80x9cBSNxe2x80x9d. Consequently, the phosphors coated on the corresponding screen corner portions are not excited, and it becomes difficult to obtain good quality screen images.
In short, the techniques for decreasing the deflection power consumption simply by reducing the diameter of the neck or the neck-sided outer diameter of the funnel necessarily involve the beam shadow neck or other device failures. They cannot correctly examine the practical moving routes of the electron beams on the basis of appropriate measurement procedures.
It is an object of the present invention to provide a CRT that effectively reduces power consumption for deflecting electron beams without involving any beam shadow neck.
This and other objects may be achieved by a CRT with a central axis. The CRT includes a panel with an inner phosphor screen and a funnel connected to the panel. The funnel has a cone portion with a neck sealing side and a body portion extended from the cone portion to the panel. A deflection yoke is externally mounted around the funnel. A neck is connected to the neck sealing side of the cone portion. An electron gun is mounted within the neck.
The meeting point between the cone portion and the body portion is indicated by a top of round (TOR) . At this connection, the funnel is structured to satisfy the following condition:
xe2x88x920.145 less than H/Lxe2x88x92(0.0225xc3x97xcex1) less than 0.08
where H indicates the distance between opposite points at the top of round TOR on a line drawn normal to the central axis, L indicates the distance between the top of round TOR and the neck sealing side of the cone portion on the central axis, and xcex1 indicates the deflection angle (degree).

Cathode ray tube having reduction in deflection power consumption relative to funnel condition

Abstract: where H indicates the distance between opposite points at the top of round on a line drawn to be normal to the tube axis line, L indicates the distance between the top of round and the neck sealing side of the cone portion on the tube axis line, and xcex1 indicates the deflection angle (degree).


Stream control methods and devices are provided for use in a network (100) for transferring a video stream from a video server (120) to a video client (110) via a distribution chain of network resources (101, 102, 103, 106). A streaming controller (130) controls streaming settings at the client node. A bridge (150) controls the video stream by obtaining a bandwidth requirement of the video stream, and network resource data including bandwidths available on network resources. The bridge determines a resource allocation including an allocated bandwidth, based on the network resource data and the bandwidth requirement so that the video stream complies with the network resource data. The allocated bandwidth enables the streaming controller to control, in accordance with the allocated bandwidth, the streaming settings for the client. A network controller (140) receives network control data from the bridge to control, in accordance with the allocated bandwidth, the respective distribution chain associated to the respective video stream.

Streaming of video content though the internet, also known as "over-the-top" (OTT), has become increasingly popular in the last decade, with services such as YouTube, Netflix and Hulu. Having to work over the best effort internet, current protocols for streaming OTT video, such as MPEG DASH (Dynamic Adaptive Streaming over HTTP), are based on "adaptive bitrate streaming", where the original video is offered in multiple versions, each characterized by a different video bitrate. Each video bitrate or version may correspond to a different video quality, and may require a different amount of bandwidth to be streamed to the user. Additionally, each version of the video stream may be temporally segmented into a sequence of segments or "chunks", for easier transportation via the HTTP protocol. The video client may constantly estimate the available bandwidth (based for example on the speed at which the last few chunks have been downloaded) and that information may be used by the client to decide which version of the content should be retrieved. The client can also switch quality throughout the video stream to adjust to more or less bandwidth becoming available. These dynamic bandwidth adjustments, which make it possible to provide users with a continuous stream, have enabled OTT services to thrive.
In recent years, more and more devices with a screen have become Internet capable: after computers, phones and tablets, also TVs have started supporting Internet connectivity. VR headsets may also be used to receive streamed video, when connected to a laptop for example. These devices, with high screen resolutions, may demand streaming videos at higher qualities. In a nearby future, one may imagine a household, or other environment with users sharing the same access network, where several of these video streaming-enabled devices may be present, and used concurrently by different family members. These video streaming-enabled devices may also be mobile, and connect to the network via a cellular connection (e.g. 4G or, in the future, 5G), a wireless connection (e.g. WIFI or Bluetooth) or a fixed-line connection.
Reference document [1] "Delivering stable high-quality video: an SDN architecture with DASH assisting network elements" describes, for software defined networking (SDN), a bandwidth assistance mechanism for MPEG DASH streams. This method has three components. First, a DASH player is extended in order to share its available bandwidth and receive bandwidth recommendations, similar to the server and network assisted DASH system (SAND). Secondly, a SDN capable network controller implements specific QoS traffic queues to control the network traffic. Thirdly, a service manager executes specific bandwidth assistance strategies. The document proposes two different bandwidth-assistance methods. In the first method, one queue is for all DASH streams and one further queue is for all non-DASH streams in the whole network with a maximum bandwidth each. Alternatively, one queue may be formed for each DASH stream with a minimum guaranteed bandwidth.
Reference document [2] describes steps for general video adaptation in 5G networks in a framework called SELFNET. The steps are: monitoring, analysis, prediction, decision and deployment. In this regard SELFNET is constantly monitoring QoS parameters and maps them to QoE levels. The acquired metrics are further enhanced with predictions about "when congestion is about to happen". Based on these predictions the SELFNET will make and execute decisions. In the deployment of those decisions it will initiate media adaptation network entities (MANE's) that will control the flow of H265 scalable video coding (SVC) streams. In this way MANE's will be initiated as close to the congestion as possible.
Reference document [3] deals with the issue above through decisions at the content provider side. Specifically, on the basis of measurements about network bandwidth, the content provider decides the bit rate that each video streaming client can request.
Reference document [4] describes a system using SDN for the prioritization of video client streams in a home network according to their capabilities and requirements. The system uses an optimization function to decide the "fair share" of bandwidth for each user, which takes into account the capabilities of the devices requesting the video streams.

Stream control system for use in a network

NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO


A printing apparatus which may effectively manage information related to each ink cartridge and an ink cartridge therefor are provided. A printing apparatus having a cartridge mounting portion on which a plurality of ink cartridges are detachably mountable, each ink cartridge having an element which may be written with information, an accumulating means for accumulating a discharge amount of ink discharged for every ink cartridge mounted on the cartridge mounting portion, and a writing member for writing information into the element, in which the writing member writes information into an element in the ink cartridge selected according to an accumulated result of the accumulating means, out of the plurality of ink cartridges mounted on the cartridge mounting portion.

1. Field of the Invention
The present invention relates to a printing apparatus and an ink cartridge therefor. In particular, it relates to a printing apparatus where a plurality of ink cartridges are detachably mountable, and to an ink cartridge used for such a printing apparatus.
2. Related Art
As one type of a printing apparatus such as an ink jet printer, there is a printing apparatus with a plurality of detachably mountable ink cartridges. Each ink cartridge contains the respective ink, and the printing apparatus executes the printing operation with the supply of ink from the mounted ink cartridge.
With such a printing apparatus, it is necessary to avoid a printing process being interrupted when there is no ink stored in the ink cartridge during printing. From the above perspectives, a control portion provided in a printing apparatus body manages a used amount or residual quantity of ink. Further, there is provided a nonvolatile memory storing information showing the used amount or residual quantity of ink in the ink cartridge. This nonvolatile memory may not contain a lot of information due to miniaturization and decrease of cost. Therefore, after storing information showing the used amount or residual quantity of ink in the memory of the printing apparatus body, only appropriate information is written in the non-volatile memory provided in the ink cartridge.
However, in a case a power supply is suddenly forcedly to be cut off due to such as a plug accidentally disconnecting from a socket or for some other reason, information showing a used amount or residual quantity of ink saved in a memory of a printing apparatus body is eliminated. When such a situation arises, the printing apparatus may not correctly manage the used amount or residual quantity of ink, and there will exist possibility of an occurrence of an inconvenience such as running out of ink during printing.

Printing apparatus and ink cartridge therefor


A uniform Si—NH—Si terminated Si(111) surface is formed by contacting a chlorine-terminated silicon surface with ammonia and a solvent such as an ether.

For over a quarter of a century, a hydrogen-terminated Si(111) single crystalline surface has remained the gold standard as a starting point for silicon modification chemistry. Although such a surface, following its preparation, is susceptible to oxidation under ambient conditions, it has proven to be sufficiently stable for chemical transformations leading to a remarkably versatile set of linkages, including Si-Halogen, Si—C (in alkyls), and Si—O (in alkoxides). However, creating a well-defined and stable interface based on Si—N bonds has remained elusive. Despite the fact that treatment with azides, nitro compounds, and amines has been found to lead to the formation of surface Si—N, each of these modification schemes produces additional carbon- or oxygen-containing functional groups that in turn react with the surface itself, leaving contaminants that affect the interface properties for any further modification protocols. More importantly, these currently available approaches to the generation of Si—N surface species lead to a variety of products, making the design of uniform attachment schemes or contaminant-free interfaces with these surfaces as a starting point essentially impossible.

-NH- terminated silicon surface and a method for its preparation


A process for the forming of Al-Cu conductive thin films with reduced electromigration failures is useful, for example, in the metallization of integrated circuits. An improved formation process includes the heat treatment or annealing of the thin film conductor at a temperature within the range of from 200.degree. C. to 300.degree. C. for a time period between 10 minutes and 24 hours under a reducing atmosphere such as 15% H.sub.2 in N.sub.2 by volume. Al-Cu thin films annealed in the single phase region of a phase diagram, to temperatures between 200.degree. C. and 300.degree. C. have .theta.-phase Al.sub.2 Cu precipitates at the grain boundaries continuously become enriched in copper, due, it is theorized, to the formation of a thin coating of .theta.-phase precipitate at the grain boundary. Electromigration behavior of the aluminum is, thus, improved because the .theta.-phase precipitates with copper hinder aluminum diffusion along the grain boundaries. Electromigration, then, occurs mainly within the aluminum grains, a much slower process.

1. Field of the Invention
This invention relates to thin film electrical conductors and their methods of manufacture for use in integrated circuit application. More specifically, this invention relates to Al-Cu film electrical conductors for integrated circuit application.
2. Description of the Prior Art
Aluminum thin films are commonly used as the conductor metallization for integrated circuit applications. With trends towards smaller linewidths carrying larger current densities, electromigration failures have become a reliability issue in aluminum conductors. Small additions of copper to aluminum (<4% by weight) have been found to increase electromigration lifetime by up to two orders of magnitude. However, the increase in lifetime is not consistently reproducible. The variability of electromigration behavior is the result of the microstructural inhomogeneity of the Al-Cu thin films which is not optimized to improve the electromigration behavior.
Al lines, made up from an Al-Cu alloy, are used as electrical interconnects for transistors, resistors, capacitors and all other components found within an integrated circuit (IC). The access time for an IC (the time within which it completes its designated task) typically goes down as the IC gets smaller and more densely packed. Power consumption and generated heat also go down as a device (IC) gets smaller. Strong market demand for energy efficient and faster integrated circuits is one of the driving factors behind smaller linewidth process technology. As the device density (i.e., 1 million transistors per chip) goes up, the acceptable line widths for the Al interconnects must be reduced to accommodate the higher device density. Under constant current, as an Al line gets thinner, the current density being carried by that line goes up. In other words, more electrons are forced to pass through an increasingly narrower cross section of Al. The electric field within the Al conductor creates a chemical potential gradient. This chemical potential gradient drives the process called diffusion which results in the movement of atoms within the conductor. The net movement of atoms in one direction results in a net movement of atomic vacancies (missing atoms in the crystal structure) in the opposite direction. Atomic diffusion occurs faster along defects in the crystalline material called grain boundaries. The increased atomic diffusion rate at grain boundaries is mainly related to the increased amount of free space at the boundary due to the mismatch of the crystal planes in adjacent crystals (grains). These vacancies can accumulate at certain parts of the microstructure and form voids which coalesce into larger voids which eventually can cause a break in the conductor. The movement of atoms and vacancies in this manner is termed electromigration and can result in failure of the IC.
Current state of the art has recognized that additions of copper to aluminum improve electromigration resistance. However, the mechanism by which copper alters electromigration behavior is unknown. Currently, copper is used in aluminum thin films as a "magic powder". Any thermal cycle to which the films are exposed in prior art practice are incidental to the process used to manufacture the integrated circuit rather than for the optimization of the thin film microstructure and therefore the conductive characteristics and, as such, are not necessarily optimized or consistently practiced to improve those characteristics. The present invention describes the mechanism for microstructural control and consequent electromigration improvement. The invention further details a process to microengineer the microstructure of aluminum-copper thin films to optimize electromigration resistance.
The present invention overcomes prior art shortcomings by providing a thermal treatment process designed to optimize the microstructure for electromigration resistance and therefore, behavior of Al-Cu thin films by engineering the thin film microstructure. In the as-deposited condition, the copper is present in the form of .theta.-phase Al.sub.2 Cu precipitates distributed randomly throughout the film both within the aluminum grains and at the grain boundaries. The formation of large .theta.-phase precipitates and a continuous coherent film of .theta.-phase precipitates at the aluminum grain boundaries impedes diffusion along the high diffusivity path in the thin film. As a result, the aluminum diffuse more slowly through the film and the electromigration lifetime is increased.
This is accomplished through a thermal treatment process that will cause the formation of large .theta.-phase precipitates and a coherent continuous thin layer of .theta.-phase precipitates to form on aluminum grain boundaries which slows aluminum diffusion during electromigration. The thermal treatment is in the range of 200.degree. to 300.degree. C. for up to 24 hours depending on temperature. This heat treatment causes the .theta.-phase precipitates inside the aluminum grains to dissolve and the coherent thin layer .theta.-phase precipitates at the grain boundaries to form.
The most important application of this invention is to inhibit Al diffusion along the thin film grain boundaries through enrichment of Cu at the Al grain boundaries. If the diffusion of Al atoms and vacancies is restricted along the grain boundaries, the resistance to electro-migration should be increased, thereby extending the life of the IC.

Microstructure control of Al-Cu films for improved electromigration resistance

The United States of America as represented by the United States Department of Energy


An integrated S/H circuit includes a first field-effect transistor (FET) formed on a substrate with a sampling capacitor, and a buffer amplifier having an input connected to the sampling capacitor and an output connectable to the body of the first FET. The buffer amplifier thereby reduces undesired effects from a parasitic diode formed by the body and sampling capacitor. More particularly, the first FET preferably has a first conduction terminal for receiving the input signal, a second conduction terminal connected to the sampling capacitor, and a control terminal responsive to control signals for connecting the input signal to the sampling capacitor during a sampling time, and for disconnecting the input signal from the sampling capacitor during a holding time. The circuit may include one or more switches for connecting the body of the first FET to the output of the buffer amplifier during the holding time to thereby apply a holding voltage from the sampling capacitor to the body of the first FET. The holding voltage overcomes the voltage droop as would otherwise be caused by the parasitic diode. The switches may also connect the body of the first FET to a supply voltage during the sampling time. In addition, the buffer amplifier may have a substantially unity gain.

Sample-and-hold (S/H) circuits are widely used, for example, to store an analog voltage signal accurately over a time period ranging typically from as little as a few microseconds to as long as several minutes. A S/H circuit may be considered as a switched capacitor network, wherein the input signal is sampled to a sampling capacitor during a sampling time, and is held on the capacitor during the holding time. Since the analog voltage across the sampling capacitor in the hold time should be available at the output terminal of the circuit even under low impedance, an output buffer amplifier is typically connected to the sampling capacitor.
The main desired characteristics of a S/H circuit may be a low hold mode voltage droop, short settling time in the acquisition or sampling mode, a low offset voltage, and hold-mode feedthrough. The hold mode droop is dependent on the leakage current from the sampling capacitor to the various components connected thereto.
In one type of S/H circuit a transmission gate in the form of a field-effect transistor (FET) samples the input voltage onto the sampling capacitor. An output amplifier reads the voltage from the sampling capacitor. The sampling capacitor may also be formed in the same semiconductor substrate as the FET. Accordingly, a parasitic diode may be formed by the body of the FET and the sampling capacitor. The parasitic diode may cause voltage droop or an inaccurate voltage for the output of the S/H circuit.

Sample-and-hold circuit having reduced parasitic diode effects and related methods


A solid-state image capturing apparatus is provided, where each of the pixels comprises a pixel light receiving section for converting incident light into a signal charge by photoelectric conversion, a charge storing section for storing the signal charge and generating a signal voltage in accordance with the stored signal charge, and an amplifying transistor for amplifying and outputting the signal voltage. A second-conductivity type semiconductor region, in which the amplifying transistor is formed, on the semiconductor substrate has an impurity concentration profile different from an impurity concentration profile of a different second-conductivity type semiconductor region, in which a peripheral circuit transistor that constitutes the peripheral circuit is formed.

1. Field of the Invention
The present invention relates to a solid-state image capturing apparatus, a manufacturing method of the solid-state image capturing apparatus, and an electronic information device. More particularly, the present invention relates to a solid-state image capturing apparatus that is capable of independently setting a concentration profile of a forming region of an amplifying transistor that constitutes a pixel from a concentration profile of a forming region of a transistor that constitutes a circuit around the pixel, a manufacturing method of such solid-state image capturing apparatus, and an electronic information device having the solid-state image capturing apparatus, such as a digital still camera, a digital video camera and a camera-equipped cell phone device.
2. Description of the Related Art
In recent years, a solid-state image capturing apparatus equipped with an amplifying MOS transistor (referred to as a MOS type solid-state image capturing apparatus, herein after) has become an attention in terms of its high sensitivity and the like. The MOS type solid-state image capturing apparatus includes a photodiode and a MOS transistor for each pixel, where the MOS transistor amplifies a signal detected by the photodiode.
A conventional MOS type solid-state image capturing apparatus will be described with reference to FIGS. 11 to 15. FIG. 11(a) is a plan view showing a diagrammatic structure of a conventional MOS type solid-state image capturing apparatus. As shown in FIG. 11(a), a MOS type solid-state image capturing apparatus 200 includes a pixel section 200a formed on a semiconductor substrate 100, and a peripheral circuit sections 201 and 202 formed in the periphery of the pixel section 200a of the semiconductor substrate. The pixel section 200a includes a plurality of pixels (see FIG. 11(b)), and the peripheral circuit sections 201 and 202 include a peripheral circuit for driving pixels.
FIG. 11(b) is a circuit diagram showing one example of a circuit structure of the conventional MOS type solid-state image capturing apparatus. As shown in FIG. 11(b), a plurality of pixels 1 are arranged in a matrix in the pixel section 200a of the MOS type solid-state image capturing apparatus 200.
Each pixel 1 includes a photodiode 3, a transfer transistor 4, an amplifying transistor 14, a reset transistor 15, and a vertical selection transistor 16. The photodiode 3 converts incident light into a signal charge and stores the signal charge. The transfer transistor 4 reads out the signal charge stored in the photodiode 3. The amplifying transistor 14 amplifies the signal charge that is read out by the transfer transistor 4 to convert the signal charge into a signal voltage, and then outputs the signal voltage. The reset transistor 15 resets the signal charge stored in the photodiode 3.
In addition, the peripheral circuit sections 201 and 202 in the MOS type solid-state image capturing apparatus 200 includes a vertical driving circuit 12, horizontal driving circuit 13, a load transistor group 17, and a row signal storing section 18. The vertical driving circuit 12 is connected to gates of the reset transistors 15 of respective horizontal lines via a plurality of reset transistor control lines 111. The reset transistor control lines 111 are arranged horizontally at a regular interval.
In addition, the vertical driving circuit 12 is connected to gates of the transfer transistors 4 for respective horizontal lines via a plurality of transfer transistor control line 131. The transfer transistor control lines 131 are arranged horizontally at a regular interval.
Further, the vertical driving circuit 12 is connected to gates of the vertical selection transistors 16 of respective horizontal lines via a plurality of vertical selection transistor control lines 121. The vertical driving circuit 12 selects a row to read out a signal via the vertical selection transistor control lines 121. Similar to the reset transistor control line 111, each of the vertical selection transistor control lines 121 are arranged horizontally at a regular interval.
The horizontal driving circuit 13 is connected to the row signal storing section 18. The row signal storing section 18 is equipped with a switching transistor for retrieving signals from each row. The row signal storing section 18 and the load transistor group 17 are connected to each other via a vertical signal line 161. Further, the row signal storing section 18 and the load transistor group 17 are connected to a source of the vertical selection transistor 16 via the vertical signal line 161 for every vertical line.
Next, an operation of the solid-state image capturing apparatus shown in FIG. 11 will be described.
First, when the electric potential of a predetermined vertical selection transistor control line 121 is turned to a high level by the vertical driving circuit 12 to select a predetermined row, the vertical selection transistor 16 on the selected row is turned on. In this stage, a source follower circuit is constituted by the amplifying transistor 14 and the load transistor group 17 on the selected row.
Next, when the electric potential of the reset transistor control line 111 on the selected row described above is turned to a high level while the vertical selection transistor 16 in the selected row is in an on-state, the reset transistor 15 on the selected row is turned on and the electric potential of a floating diffusion layer connected to the gate of the amplifying transistor in the selected row is reset.
After the reset transistor 15 on the selected row is turned off and when the electric potential of the transfer transistor control line 131 on the selected row is turned to a high level while the vertical selection transistor 16 is in an on-state, the transfer transistor 4 is turned on and the signal charge stored in the photodiode 3 is transferred to the floating diffusion layer.
In this stage, the gate voltage of the amplifying transistor 14 that is connected to the floating diffusion layer becomes equivalent to the electric potential of the floating diffusion layer, and the voltage of the vertical signal line is substantially equal to the gate voltage of the amplifying transistor 14. Thus, a signal based on the signal charge stored in the photodiode 3 is transferred to the row signal storing section 18.
Subsequently, while the vertical driving circuit 12 selects the next row, the horizontal driving circuit 13 successively outputs the voltage signal of each vertical signal line 161 to the row signal storing section 18. The row signal storing section 18 outputs the voltage signal from each vertical signal line 161 as an output signal to every row.
Next, a specific structure of the solid-state image capturing apparatus shown in FIG. 11 will be described with reference to FIGS. 12 and 13.
FIG. 12 is a plan view showing an enlarged pixel that constitutes the conventional solid-state image capturing apparatus shown in FIG. 11(b). FIG. 13 is a diagram showing a cross sectional structure of the pixel shown in FIG. 12, and more specifically, FIG. 13 shows a diagram of a cross section along the line A-B-C-D shown in FIG. 12. Note that a semiconductor substrate is omitted in FIG. 12.
As shown in FIG. 12, the photodiode 3 is equipped with an n-type semiconductor region 151 formed on the semiconductor substrate 100 (see FIG. 13). In the semiconductor substrate 100, an element separation section 92 is formed between adjacent semiconductor regions 151. In addition, a plurality of n-type semiconductor regions 5a to 5c are horizontally formed in a region adjacent to the semiconductor region 151 of the photodiode 3, with an element separation section 91 arranged therebetween. The semiconductor regions 5a to 5c are arranged vertically. Further, an n-type semiconductor region 154 is formed in a region vertically adjacent to the semiconductor region 151.
In addition, gate electrodes 153a and 153b are respectively formed between the adjacent semiconductor region 5a and semiconductor region 5b, and the adjacent semiconductor region 5b and semiconductor region 5c, via a gate insulation film 156 (see FIG. 13). Further, a gate electrode 152 is formed horizontally and extended between the semiconductor region 151 and semiconductor region 154 via a gate insulation film (not shown). The gate electrode 152 also serves as a transfer transistor control line 131 (see FIG. 11(b)).
In the examples of FIGS. 12 and 13, the transfer transistor 4 is constituted of the gate electrode 152, the semiconductor region 154, the semiconductor region 151 and the gate insulation film (not shown). The transfer transistor 4 utilizes the semiconductor region 151 of the photodiode 3 as a source region. In addition, the reset transistor 15 is constituted of the gate electrode 153a, the semiconductor regions 5a and 5b, the gate insulation film 156. The amplifying transistor 14 is constituted of the gate electrode 153b, the semiconductor regions 5b and 5c, the gate insulation film 156. The reset transistor 15 and the amplifying transistor 14 share the semiconductor region 5b.
In FIG. 12, 155 denotes a wiring. The wiring 155 is connected to the semiconductor region 154, the semiconductor region 5a and the gate electrode 153b via a contact 156a.
As shown in FIGS. 12 and 13, an element separation section is formed in a pixel. As the miniaturization of pixels in the MOS type solid-state image capturing apparatus in resent years, the element separation section is, in many cases, formed by using an STI (Shallow Trench Isolation) method, which forms a trench in a semiconductor substrate.
However, with regard to the element separation section ("STI element separation section" hereinafter) formed by the STI method, there is a problem of causing a crystal defect or stress defect near the element separation section. More particularly, a defect of white dots, namely a white defect, is observed on a playback screen if the crystal defect occurs in the MOS type solid-state image capturing apparatus. Although the number of the dots depends on the STI forming method and the size of the solid-state image capturing apparatus, the number ranges from several to several thousands. Further, when the stress defect occurs in the MOS type solid-state image capturing apparatus, an STI stress defect layer starts to generate a leak current flowing from the element separation section to the photodiode, so that a small and uneven irregularity is observed on a playback screen.
Among such defects, the local dot defect (white defect), which is due to the crystal defect, can be corrected with the advancement of the recent digital technology, so that the dot defect is not a major concern as before. However, it is difficult to correct the small and uneven irregularity by the digital processing due to the STI stress defect layer. This is because a memory with a large capacity is required to correct the irregularity that occurs on the entire screen, thereby increasing the cost of a system to correct the defect.
Therefore, it is proposed to implant an impurity, which has an opposite conductivity with that of a source drain region of the MOS transistor, into a forming region of the STI element separation section to provide an STI leak stopper (see Reference 1, for example). Reference 1 discloses an example of forming an STI leak stopper to surround a side and a bottom of an element separation section. When the STI leak stopper is provided, the leak current can be prevented from flowing from the element separation section to the photodiode, thereby preventing the uneven irregularity from appearing on a display screen.
Herein, the STI leak stopper disclosed in Reference 1 will be described with reference to FIG. 14.
FIG. 14 is a partial cross sectional view showing a manufacturing step of the conventional MOS type solid-state image capturing apparatus having the STI leak stopper formed therein, with FIGS. 14(a) to (d) showing a series of a major step. In FIGS. 14(a) to (d), the left half of the figures shows a pixel section A and the right half of the figures shows a peripheral circuit section B.
In general, both an N-channel MOS transistor and a P-channel MOS transistor are formed on a semiconductor substrate in the MOS type solid-state image capturing apparatus. In FIG. 14(a) to (d), however, only a region (NMOS region) for forming the N-channel MOS transistor is shown.
First, as shown in FIG. 14(a), a trench 701 for forming an STI element region is selectively formed in a forming region of the STI element separation section on the semiconductor substrate 100. Next, a resist film 702 having an opening on a pixel region A is formed, and an impurity is implanted obliquely using the resist film 702 as an ion implantation mask. As a result, an STI leak stopper 703 is formed along the side and the bottom of the trench 701. Herein, the semiconductor substrate 100 is an n-type silicon substrate. Further, a p-type impurity is implanted into the STI leak stopper 703, so that the p-type impurity also serves to separate the two photodiodes that is formed by the n-type impurity.
However, according to this ion implantation step, the p-type impurity is implanted into a region other than the forming region of the STI element separation section, namely, a forming region A1 of a photodiode and a forming region A2 of a transistor (readout transistor) for reading out a signal charge stored in a photodiode. Therefore, the impurity concentration of the well (see FIG. 14(b)) that is formed in the forming region A1 and the forming region A2 is greater than the impurity concentration of the well (see FIG. 14(b)) that is formed in the peripheral circuit section B.
Next, as shown in FIG. 14(b), after the resist film 702 is removed, an insulation, such as a silicon oxide film, is embedded in the trench 701 formed in the substrate described above to form an STI element separation section 704. Next, a resist film 705 is formed, the resist film having an opening on the transistor forming region A2 of the pixel section A and the peripheral circuit section B, and a p-type impurity is implanted obliquely using the resist film 705 as an ion implantation mask. As a result, a p-type well 706 is formed in the transistor forming region A2 of the pixel section A and the peripheral circuit section B.
Next, the p-type impurity is further ion-implanted using the resist film 705 as a mask. As a result, a channel region 707 of a transistor is formed in the transistor forming region A2 and the peripheral circuit section B. In addition, a threshold voltage Vth of a transistor can be controlled by adjusting the impurity concentration in the channel region 707.
Next, as shown in FIG. 14(c), after the resist film 705 is removed, a resist film 709, (shown with a dotted line) having an opening on a portion above the transistor forming region A1, is formed, and an n-type impurity is ion-implanted using the resist film 709 as a mask. As a result, an n-type semiconductor region 710 that constitutes a photodiode is formed. Note that the semiconductor region 710 can also be formed before the channel region 707 is formed.
Next, after the resist film 709 is removed, a gate insulation film 714 that is composed of a silicon oxide film is formed in the transistor forming region A2 and the peripheral circuit section B, and subsequently, a gate electrode 708 that is composed of polysilicon is formed on the insulation film 704.
Next, as shown in FIG. 14(d), forming and etching are performed on the insulation film, and a side wall insulation film (side wall spacer) 711 is formed on the sides of the gate insulation film 714 and the gate electrode 708. Next, a resist pattern 712, having an opening on a portion above the transistor forming region A2 and the peripheral circuit section B, is formed, and an n-type impurity is implanted using the resist pattern 712 as a mask. As a result, a source drain region 713 of a transistor is formed. Subsequently, an interlayer insulation film, various wirings, a microlens and the like are formed to complete the MOS type solid-state image capturing apparatus.
Whereas an n-type semiconductor region is arranged on the surface of the photodiode that constitutes the light receiving section in the solid-state image capturing apparatus disclosed in Reference 1, the conventional solid-state image capturing apparatus also includes a p-type semiconductor layer formed on the surface of the n-type semiconductor region so that an embedded photodiode is formed in the light receiving section.
According to the example shown in FIG. 14, the STI leak stopper 703 is formed, so that the leak current can be prevented from flowing from the element separation section 704 to the photodiode (semiconductor region 710). As a result, the uneven irregularity that appears on a display screen can be controlled.
However, the impurity concentration of the well formed in the pixel section increases if the leak stopper is formed near the element separation section. As a result, a back bias effect tends to occur in a transistor formed on a semiconductor substrate and the output characteristics of a source follower circuit in the MOS type solid-state image capturing apparatus decreases. An explanation with respect to such problems will be described below.
In general, one of the most important parameters in a MOSFET is a threshold voltage VT. An ideal threshold voltage VT can be given by an equation (1) below. In the equation (1) below, ∈s denotes a dielectric constant of silicon, q denotes a charge amount per one electron, NA denotes an impurity concentration of a semiconductor substrate, ψB denotes a Fermi level, and COX denotes a gate oxide film capacitance value.
                              V          T                =                                                            2                                                  ɛ                  S                                                                                qN                    A                                                                          (                                          2                                                                    φ                        B                                                              )                                                                                C              OX                                +                      2                                      φ              B                                                          (        1        )
In addition, In the MOSFET, the threshold voltage VT is influenced by a substrate bias voltage VBS. That is, when a voltage in a reverse direction is applied between the semiconductor substrate and the source, the width of the depletion layer is widened and the threshold voltage VT, which is necessary to cause an inversion, is increased. This is referred to a so called back bias effect. The threshold voltage VT can be expressed using the substrate bias voltage VBS by an equation (2) below. Note that VT0 is a threshold voltage when the VBS is 0 (zero).
                              V          T                =                              V                          T                                                                                0                                +                                                                      2                                                        ɛ                    S                                                                          qN                    A                                                                              C                OX                                                                (                                                                                2                                                                    φ                        B                                                              +                                          V                      BS                                                                      -                                                      2                                                              φ                      B                                                                                )                                                          (        2        )
Herein, the equation (2) described above can be expressed by an equation (4) below when γ is set as shown in an equation (3) below. In the equation (4), the voltage on the right-hand side expresses an error from the ideal output.
                    γ        =                                            2                                            ɛ                S                                                          qN                A                                                          C            OX                                              (        3        )                                                      V            T                    -                      V                          T                                                                                0                                      =                  γ                                (                                                                                2                                                              φ                      B                                                        +                                      V                    BS                                                              -                                                2                                                        φ                    B                                                                        )                                              (        4        )
Further, FIG. 15 is a circuit diagram showing a circuit structure of a basic source follower circuit. The source follower circuit can be used with a low power supply voltage and has a characteristic of a fast response. The source follower circuit is commonly known as a level shift circuit. In FIG. 15, since a transistor MA is not grounded, the threshold voltage VT of the transistor MA is easily influenced by the back bias effect. Electric potentials Vin, VG and VOUT shown in FIG. 15 can be expressed by an equation (5) below using the equation (4) described above.Vin−Vout−VG=γ(√{square root over (2φB+Vout)}−√{square root over (2φB)})  (5)
Further, in the source follower circuit shown in FIG. 15, a voltage gain Av (=Vout/Vin) can be expressed by an equation (6) based on the equation (5) described above.
                              A          V                =                  1                      1            +                          γ                              2                                                                      2                                                                                2                                                                                φ                            B                                                                          +                                                  V                          out                                                                                (        6        )
From the equation (6) described above, AV≈1 when the value for γ is small. In addition, from the equation (6) described above, the larger the value for γ, the linearity of the source follower circuit is further decreased and the voltage gain becomes smaller. Based on this fact, the linearity of the source follower circuit can be increased by decreasing the value for γ, In addition, the voltage gain can be increased by decreasing the value for γ, and therefore, the dynamic range of the MOS type solid-state image capturing apparatus can be expanded in the MOS type solid-state image capturing apparatus.
From the equation (3) described above, it is understood that an impurity concentration NA of the semiconductor substrate can be decreased so as to decrease the value for γ. Therefore, the output characteristics of the source follower circuit can be improved by diluting the concentration of the well formed in the pixel region.
However, as described above, the impurity concentration of the well formed in the pixel region increases if a leak stopper is formed near the element separation section. Therefore, it will be difficult to improve the linearity of the source follower circuit and to expand the dynamic range.
In order to solve such problems, a method for counter doping an impurity, which has the opposite conductivity with the conductivity of the well, directly under the gate of the output transistor, which constitutes the source follower circuit (see Reference 2, for example). According to the method disclosed in Reference 2, the linearity of the source follower circuit can be improved and the dynamic range can be expanded because the impurity concentration NA of the semiconductor substrate can be decreased. In addition, the variation of threshold voltage VT can be controlled because the impurity concentration can be decreased in the surface layer of the well. As a result, the back bias effect in the transistor can also be controlled.
Reference 1: Japanese Laid-Open Publication No. 2004-253729
Reference 2: Japanese Laid-Open Publication No. 2004-241638

Solid-state image capturing apparatus, manufacturing method for the solid-state image capturing apparatus, and electronic information device


A process for synthesizing a catalyst component for manufacturing ethylene polymer and co-polymer. The present invention provides a process for synthesizing catalyst component (A), comprising forming a complex by contacting the solid intermediate (B) with an aluminum compound represented by formula X3-nAl(OY)n, and alkyl metal (C), wherein X is halide, Y is a hydrocarbon group or chelating carbonyl group, and wherein 1 is less than or equal to n which is less than or equal to 3, and then contacting the complex with titanium halide having formula TiX4 wherein X is halide. Solid intermediate (B) is formed by reacting magnesium metal with alkyl halide in the presence of alkoxy aluminum represented by formula Al(ORa)3, silicon halide represented by formula SiX4 and alkoxy silane represented by formula Si(ORb)4, wherein Ra and Rb are an aromatic or aliphatic alkyl group and wherein X is halide. Alkyl metal (C) is synthesized by reacting alkyl aluminum compounds represented by formula AlRc3 with a secondary amine having formula HNRd2 and then by reacting with alkyl magnesium compounds represented by formula ReMgRf, wherein Rc, Rd, Re and Rf are an aromatic or aliphatic alkyl group. The catalyst component is suitable for producing ethylene polymer and co-polymer with narrow molecular weight distribution as well as improved branching compositional distribution.

1. Field of the Invention
The present invention relates to a unique titanium-based catalyst system for producing linear low density co-polymers of ethylene. More specifically, the present invention relates to a catalyst comprising titanium and magnesium components. The catalyst is useful for producing ethylene polymers having narrow molecular weight distribution and improved branching compositional distribution.
2. Description of Related Art
Polyethylene polymers are well known and are useful in many applications. Linear low density polyethylene co-polymer (LLDPE), having density of 0.910 to 0.945 g/cm3, is produced primarily using gas phase processes and has been important in commodity and industrial areas over last 20 years. Intense research has been directed to developing high performance LLDPE resins having better impact strength, higher transparency, and less wax content. For example, super strength LLDPE, an ethylene co-polymer having hexene as the alpha-olefin, displays narrow molecular weight distributions and narrow branch compositional distributions. Much effort has been focused on developing new catalyst systems for producing super strength LLDPE having these properties.
Single site catalyst systems employing organometallic compounds such as metallocene compounds are known for controlling molecular weight distributions and branching compositional distributions. Unfortunately, it is difficult to apply these catalysts in existing plants, so the use of such systems in gas phase processes for producing LLDPE has been slow to develop. Also, the solubility properties of organometallic compounds (MAOs) lead to less favorable immobilization processes on inorganic supports, further hindering their applicability.
In contrast, supported titanium-based catalysts (Ziegler-Natta catalysts) can be used in existing processes, without modification. Consequently, there has been intensive development of titanium based catalyst systems for improving molecular weight distribution and compositional distribution of LLDPE.
U.S. Pat. No. 4,748,221 and European Patent No. 0 703 246 A1 describe a common Ziegler-Natta catalyst system. Magnesium metal powder is reacted with butylchloride in a non-polar solvent in the presence of Ti(OR)4. Further treatment with TiCl4/Ti(OR)4/butylchloride results in the formation of a catalyst suitable for gas phase ethylene co-polymerization. These patents use a one step reaction with BuCl, and TiCl4/Ti(OR)4. Also, the LLDPE obtained using this catalyst does not have the narrow molecular weight distribution and compositional distribution that is desired in the newer high performance resins, such as super strength LLDPE.
Other examples of titanium-based catalysts for traditional LLDPE are described in U.S. Pat. Nos. 5,047,468, 5,091,353, and 5,192,731. U.S. Pat. No. 5,047,468 describes a catalyst system for LLDPE production, which is obtained by dissolving MgCl2 with [TiCl3 (AlCl3)1/3] in THF to make a solution containing MgCl2 and titanium halide that is subsequently immobilized on silica support. In U.S. Pat. Nos. 5,091,353 and 5,192,731, MgCl2 is dissolved in electron donating solvent and reacted with alkylaluminum compounds to solidify magnesium halide with aluminum alkoxy compounds. Contacting the solid with titanium halide affords a solid silica catalyst with good morphology and co-polymerization ability. However, the polymer formed with the catalyst results in wide compositional distribution some polymers also with a wide molecular weight distribution.
U.S. Pat. Nos. 5,260,245, 5,336,652, and 5,561,091 describe a catalyst system in which dialkylmagnesium and silane compounds are reacted with —OH group of a silica support which is then contacted with transition metal halide to form relatively homogeneous active site. This catalyst system exhibits more homogeneous ethylene polymerization or co-polymerization capability than traditional magnesium-titanium (IV) halide based catalyst systems. However, this catalyst system requires extra processing steps because the silica support must be treated, either chemically or by heating, to remove bound water and excess —OH groups prior to the formation of the catalyst.
U.S. Pat. Nos. 6,500,906, 6,590,046, 6,841,498, and 6,956,003 describe a catalyst system that does not require immobilization of the titanium component onto the magnesium halide support prior to use. The catalyst system employs a liquid phase transition metal solution in-situ with solid magnesium halide support. The transition metal solution is prepared by reacting Mg[AlR′(OR)3]2 with a nitrogen bound chelating ligand (N-chelate ligand) such as dialkylcarbodiimide, and then with TiX4 as described in where X is halide. This method has the advantage of not relying on a complicated immobilization process to ensure improved catalyst properties.
The preparation methods described in the art for the catalytic control of molecular weight distribution and/or branching compositional distribution are geared toward the complicated task of controlling the active site formation process, which in turn requires careful control of the catalyst precipitation process to ensure consistent catalyst properties. Catalyst properties are deteriorated in the absence of control over the precipitation process. Therefore, a need exists for a simple and efficient process for obtaining a magnesium-titanium based catalyst system for polyethylene polymer and co-polymer suitable for super strength LLDPE with controlled narrow molecular weight distribution and improved branching compositional distribution.

Catalyst system for producing ethylene (co) polymer with improved branch distribution


A rotation speed of a transmitting member is controlled such that a predetermined rotation speed difference or predetermined rotation speed ratio is obtained between the rotation speed of the transmitting member and an eighth rotating element or a fourth rotating element. By detecting a change in the rotation speed of a second motor that is connected to the transmitting member when an apply device is applied, it is possible to determine the time at which a first clutch or a second clutch starts to be applied and the time at which the first clutch or the second clutch is completely applied. As a result, it is possible to control the apply pressure of the first clutch or the second clutch and thus rapidly execute a shift.

1. Field of the Invention
The invention relates to a vehicular drive control apparatus provided with i) an electric differential portion that functions as an electric differential device and has a differential mechanism that distributes output from an engine to a first electric motor and a transmitting member, and a second electric motor that is connected to that transmitting member, and ii) a shifting portion that functions as an automatic transmission and constitutes part of a power transmitting path from the transmitting member to driving wheels. The invention also relates to a control method of a vehicular drive system. More particularly, the invention relates to improving torque response when the power transmitting path has been changed from a power transmission-interrupted state to a power transmittable state.
2. Description of the Related Art
Japanese Patent Application Publication No. 2005-351459 (JP-A-2005-351459), for example, describes a related control apparatus for a vehicular drive system that includes an electric differential portion and a shifting portion. The electric differential portion functions as an electric differential device and has a differential mechanism that distributes output from an engine to a first electric motor and a transmitting member, and a second electric motor that is connected to that transmitting member. The shifting portion functions as an automatic transmission and constitutes part of a power transmitting path from the transmitting member to driving wheels.
In JP-A-2005-351459, when the power transmitting path from the electric differential portion to the driving wheels is changed from a non drive state in which power is unable to be transmitted (such as when a shift lever is in the "N" position) to a drive state in which power is able to be transmitted (such as when the shift lever is in the "D" or "CR" position, for example), shift shock can be reduced, even if hydraulic pressure of friction apply elements of the shifting portion that change the power transmitting path to the power transmittable state is applied quickly, by synchronously controlling the rotation speed of the transmitting member to a rotation speed that corresponds to the input shaft of the shifting portion.
When the rotation speed of the transmitting portion is controlled to a completely synchronous speed, as in JP-A-2005-351459, the start and end of application of the friction apply element are unable to be determined from the change in the rotation speed of the transmitting member. Therefore, the apply timing is instead determined according to timer control. In this case, taking into account variation in the period of time that it takes for the apply element to apply, which varies according to the running state, and the like, of the vehicle, the timer period must be set longer, and as a result, the increase in drive torque (i.e., torque response) may be delayed.

Vehicular drive control apparatus and control method of vehicular drive system


A compact sensor system integrates electric and/or magnetic field sensors to accurately measure, with a high level of sensitivity, one or more electric and magnetic vector components of fields. The electric and magnetic field data can be utilized separately or combined. The sensor system is self-contained so as to include a built-in power source, as well as data storage and/or transmission capability. The integrated sensor system also preferably includes a global positioning system (GPS) to provide timing and position information, a sensor unit which can determine the orientation and tilt of the sensor system, and self-calibrating structure which produces local electric and/or magnetic fields used to calibrate the sensor system following deployment.

1. Field of the Invention
The present invention pertains to measuring at least magnetic fields and, more particularly, to an integrated sensor system for measuring vector components of magnetic fields, preferably along with electric fields.
2. Discussion of the Prior Art
Measurements of electric and magnetic fields at low frequencies, generally less than 1 kHz, have been made for many years using discrete sensors to measure the electric field (E-field) and magnetic field (B-field) separately. In addition, it has been proposed to integrate electric and magnetic components into a single sensor. However, when a high level of sensitivity is required, individual sensors are invariably utilized to measure desired components of each field. For example, to make a magnetotelluric measurement, individual magnetic induction sensors are laid on the ground at a separation of a few meters and rods are buried in the ground nearby to measure the horizontal electric field. In most cases, the respective sensors must all be aligned relative to one another and mounted with sufficient rigidity to minimize relative motion. Depending on the accuracy required, such an installation can take a significant time to complete and requires an area in the order of 10 m2 to operate.
Prior high sensitivity induction sensors have been too large to integrate together. While one cylindrical object of length even up to 2 m is relatively easy to handle and transport, a system comprised of two or three such sensors at right angles to each other, if even contemplated, would be very cumbersome. In addition, prior induction sensors designed for detection of small low frequency signals had diameters in the order of 3 cm or more. Simply stated, prior induction sensors and arrangements that involve them are quite large and sub-optimal, while being inefficient to set-up and operate.
In many applications, the ability to reasonably employ a dual field sensor system will depend on the compactness and even weight of the system. These applications include the installation of dual field sensors in aircraft, spacecraft and ground vehicles, as well as situations where the sensor system must be deployed in a certain way such as hand or air-drop deployment situations. The time consuming set-up and lack of compactness in prior proposals has essentially limited the use of collected E-field and B-field information to geophysical applications, such as magnetotellurics and the measurement of lightning, wherein the sensors can be positioned over a relatively wide area.
When electric and magnetic field data has been collected together, the objective has generally been to collect an individual field parameter as a record of a specific physical phenomena, e.g. lightning. However, the present Applicants have recognized that specific vector components of known orientation in the electric and magnetic field data can be combined to produce a reduced output. For instance, new combined electric and magnetic measurement applications arise, including using information in one measurement channel, e.g., an electric field vector component, to reduce environmental noise in other channels, e.g., multiple magnetic field vector components. In addition, the ratio of various signals in different electric and magnetic axes can be determined to provide source characteristic capabilities.
Based on the above, there exists a need to combine one or more electric field sensors with one or more magnetic field sensors to establish an integrated sensor system which is compact in nature in order to employ the sensor system in a wide range of applications. In addition, there exists a benefit to be able to readily combine different data from individual axes of such an integrated sensor system in order to take advantage of particular relationships between the electric and magnetic fields that pertain to certain properties of the environment or source(s) of interest.

Integrated sensor system for measuring electric and/or magnetic field vector components


A safety lever pin for insertion into a safety lever pin receipt aperture of the sear assembly of an MK-19 grenade launcher such pin having a machined cylindrical body with an arm extending from the top thereof and structure to retain the safety lever pin within the safety lever pin receipt aperture to prevent its inadvertent falling out therefrom when the sear assembly is removed from the weapon and inverted.

1. Field of the Invention
The device of this invention resides in the area of safety lever pins and more particularly relates to a safety lever pin for use in the sear assembly of an MK-19 grenade launcher that retains itself in place when the sear assembly is removed from the weapon.
2. Description of the Prior Art
In the structure of a 40 mm. MK-19 grenade launcher the sear assembly contains part of the safety interlock which, when the safety switch is manipulated into its safety position, prevents the bolt from moving forward, thereby preventing firing of the weapon. When the safety switch is in its firing position, the weapon can be fired. The sear assembly is removable from the weapon by rotation of the sear assembly and disengagement thereof from a bayonet-type interlock on the bottom of the weapon. Within the sear assembly is located the safety lever pin. The safety lever pin of the prior art consists of an investment cast piece having a cylindrical body with an elongated, flattened arm which extends outward from the body to retain the safety lever pin in position when inserted into its pin receipt aperture which arm prevents the pin from passing too far into the sear assembly. A narrow groove is formed in the cylindrical body at the junction with the arm. This cast piece is small and expensive to manufacture and machine. The function of the safety lever pin is to act as a pivot axis for the safety lever. This pin acts to engage and allow back and forth movement of the safety lever which can be moved back and forth into the safety position or alternately into the firing position by a thumb-operated safety switch member.
The safety lever pin is designed to be easily removed from the sear assembly when disassembling the weapon. However if the sear assembly, once removed from the weapon, is turned over, the safety lever pin has no retention means and falls out onto the ground. This occurrence can be disadvantageous if the pin cannot be located to reposition it back into the sear assembly. Because of the problem with the safety lever pin falling out of the sear assembly, it has been suggested that a drop of semi-fluid weapon's lubricant (LSAT) be inserted in the safety lever pin receipt aperture before the safety lever pin is positioned therein. The tacky consistency of the LSAT helps the safety lever pin be retained within its receipt aperture for a time. Unfortunately, such lubricants can become contaminated with dirt and will eventually lose their tackiness, allowing the safety lever pin to fall out and possibly become lost during disassembling of the weapon.


An air dam which provides at least one panel which operates between an open condition and a closed condition in the open space established between a truck coupled to a trailer to alter a part of an air stream generated about the truck-trailer during travel.

An air dam which provides at least one panel which operates between an open condition and a closed condition in the open space established between a truck coupled to a trailer to alter a part of an air stream generated about the truck-trailer during travel.
Typically, the towing vehicle (often referred to a truck or a tractor) of a truck-trailer (often referred to as a tractor-trailer) provides a wide coupling plate known as a fifth wheel coupling. When the truck and trailer are coupled by the fifth wheel coupling (or other type of coupling) an open space between the truck and the trailer can be defined by the external surfaces of the truck chassis deck (or "deck"), the backside of the tractor and the front side of the trailer. The open space established between the truck and the trailer may not be used for any purpose other than to allow the truck and trailer to articulate about the coupling axis during operation.
A substantial problem of conventional truck-trailer configurations having an open space established between the truck and the trailer may be that the open space disrupts the air stream about the truck-trailer generating resistance to forward travel of the truck-trailer. The disruption of the air stream or the resistance generated by the disruption of the air stream by the open space can increase as the speed of the truck-trailer increases. With the increased price of fuel, it has become ever more important for drivers to utilize a truck-trailer having a configuration which alters the air stream about the truck-trailer to achieve the least or a reduced amount of air stream resistance to travel of the truck-trailer.
Various impediments to providing a solution to the problem of generating a reduced resistance air stream about the open space between the truck and the trailer include a lack of air stream alteration means which operate between an open condition and a closed condition to allow articulation between the truck and the trailer or to provide access and egress of the open space. Additionally, many conventional air dams which completely surround the open space may be prohibitively expensive to utilize or do not generate a substantial reduction in the resistance of the truck-trailer to the air stream because gaps between the air dam and the trailer create additional substantial disruption of air stream which can increase rather than decrease resistance of the truck-trailer during forward travel.
Moreover, it is believed that it was not known prior to the invention described herein that generating an air stream of the proper direction and velocity in the open space between the truck-trailer can be effective in generating a reduced resistance air stream which allows travel of the truck-trailer using a reduced amount of fuel.
The inventive air dam described-herein addresses each of the above-described problems in a practical manner.


A trap bowl is provided to accumulate liquid droplets from a filter, as a liquid content. The trap bowl includes a transparent vertical prism. The transparent vertical prism includes a face that forms a vertical transparent surface facing against a content of the section. The face can provide a first angle of total reflection when content of the section is a type of gas, and a second angle of total reflection when the content of the section is the liquid content. A light source may emit a light beam incident on the face at an angle of incidence. The angle of incidence results in reflection of the light beam, striking the light receiver, when the face has the first angle of total reflection, and results in refraction of the light beam, missing the light receiver, when the face has the second angle of total reflection.

An array of patients can benefit from receiving therapeutic vas (e.g., nitric oxide gas) in inspiratory breathing gas flow. The therapeutic gas can be delivered, for example, from a breathing circuit affiliated with a ventilator (e.g., constant flow ventilator, variable flow ventilator, high frequency ventilator, bi-level positive airway pressure ventilator or BiPAP ventilator, etc.). In operation, therapeutic gas may be injected into the inspiratory breathing gas flowing in the breathing circuit of the ventilator device. This inhaled therapeutic gas is often provided via a therapeutic gas delivery system at a constant concentration, which is provided based on proportional delivery of the therapeutic gas to the breathing gas. Further, a sampling system (e g affiliated the therapeutic gas delivery system) may continuously draw in the inspiratory breathing gas flow to at least confirm that the desired dose of the therapeutic gas in the inspiratory breathing gas flow is being delivered to the patient. Example operation can include a sample pump pulling in inspiratory flow (e.g., in the near vicinity of the patient) to confirm that the desired therapeutic gas concentration is in fact being delivered to the patient.
One such therapeutic gas is inhaled nitric oxide (iNO), which can be used as a therapeutic gas to produce vasodilatory effect on patients. When inhaled, iNO acts to dilate blood vessels in the lungs, improving oxygenation of the blood and, for example, reducing pulmonary hypertension. Accordingly, nitric oxide is provided in inspiratory breathing gases for patients with various pulmonary pathologies including, but not limited to, hypoxic respiratory failure (HRF) and persistent pulmonary hypertension (PPH). The actual administration of iNO is generally carried out by introduction into the patient as a gas along with other normal inhalation gases. For example, iNO can be introduced, from an iNO delivery system, into the inspiratory flow of a patient breathing circuit affiliated with a ventilator.
Separately and/or in conjunction with iNO, patients may receive inspiratory breathing gas flow containing liquid particles (e.g., nebulized medical solutions and suspensions, moisture from humidified air, etc.) and/or other particles. However, as described above, iNO delivery systems may include a sampling system to confirm dosing of iNO being delivered to the patient. Liquid particles in the inspiratory breathing flow, even though they may provide additional benefit to the patient, may contaminate the sampling system (e.g., gas analyzers) Accordingly, at times, there is a need to filter the sampled inspiratory breathing gas flow of liquid particles and/or other particles, for purposes such as mitigating contamination of the gas sampling system.
Associated with filtering liquid particles from the inspiratory breathing flow, there is a need to trap the liquid particles that are removed. Various configurations of such traps, and various techniques directed to detecting the fluid level in the traps, are known. Additional desired features of the level detection may include tolerance for various orientations of the trap, ability to detect proper installation of the trap, simplicity, and ready adaptability to different capacities of traps. Accordingly, there is a need for an improved apparatus and method to trap, and detect accumulated levels of liquid particles filtered from inspiratory breathing gas flow being provided to a patient in need thereof.

Apparatus and method for detecting liquid level in a clear or partially clear container

Mallinckrodt Pharmaceuticals Ireland Limited


The within invention concerns a telescopic boom of a crane with a pivot section, telescopic sections that can telescope out of the pivot section, and a guying that has at least one guy stand housed to pivot on one of the sections, and at least one guy cable supported by the guy stand, as well as erection mechanisms for raising the support stand out of folded transportation position into raised operating position. According to the invention, the telescopic boom is characterized by the fact that the erection mechanism consists of a tension rod that connects the guy stand with an internal telescopic section that can telescope outward opposite the section on which the guy stand is housed to pivot.

The within invention concerns a telescopic boom of a crane with a pivot section, telescopic sections that telescope out of the pivot section, and a guying that has at least one guy stand housed to pivot on one of the sections, at least one guy cable supported on the guy stand, and erection equipment for raising the guy stand from its transportation position, folded against the boom, into raised operating position.
Telescopic booms have become known in which the guy stand consists of two guy supports that can be opened out into a V when in operating position (cf. DE 100 22 658 A1). The guy supports are pivoted on a swivel frame that is attached in such manner that it can swivel on top of the pivot section. The guy supports can be raised by swiveling the swivel frame. Additionally, the guy supports can be swiveled relative to the swivel frame so that they can be pressed open into a V. The guy supports are raised and opened out by means of an appropriate hydraulic cylinder. To supply the hydraulic cylinder easily with hydraulic fluid and to allow it to pivot at an appropriate distance from the swivel axle of the guy stand, the guy stand must be positioned on the pivot section. If the guy stand were attached to one of the telescopic sections, a tubular drum would be necessary.


The present invention relates to organophosphate-inhibited acetylcholinesterase (AChE) reactivators with central nervous system (CNS) bioavailability and their associated methods of preparation including their use for treatment of exposure to AChE inhibitors such as an organophosphate (OP) insecticides and nerve agents.

Signal transmission at synapses is mediated by the neurotransmitter acetylcholine. Such signaling may be discontinued by AChE, which catalyzes the hydrolysis of acetylcholine. AChE-inhibiting chemicals may prevent the breakdown of acetylcholine, thereby disrupting normal nervous system activity through an excess of acetylcholine at synapses. For example, certain classes of pesticides, such as organophosphates and carbamates, may result in toxicity through AChE inhibition. Organophosphate chemical warfare agents such as sarin and tabun also function through AChE inhibition. Accordingly, if an individual may be exposed to such inhibitors, there remains a need to prophylactically or therapeutically mitigate or reverse such cholinergic toxicity. Individuals or animals who have been exposed to a cholinesterase inhibitor may currently be treated with an AChE reactivator (antidote) such as pralidoxime in combination with atropine, a competitive agonist for acetylcholine at muscarinic receptors, and an anti-seizure medication such as benzodiazepine. In addition, AChE reactivators may be employed medicinally to treat various ailments such as Alzheimer's disease.

Reactivators of organophosphorous inhibited acetylcholinesterase


Provided is a fluid film bearing, especially for a rotor hub in a wind turbine, including an inner part that supports a rotating outer part, wherein the inner part includes multiple radial pads distributed along the outer circumference of the inner part, each of the radial pads having at least one radial pad sliding surface, wherein the radial pad sliding surfaces support at least one outer part sliding surface of the outer part in the radial direction.

Wind turbines typically comprise a tower, a nacelle mounted on top of the tower and a rotor hub with mounted rotor blades that is rotatable with respect to the nacelle to generate power. The hub can be coupled to a gear box that drives a generator or the wind turbine can be a direct drive turbine. In the second case the hub directly drives the rotor of the generator. Especially in direct drive wind turbines it can be advantageous to use a rotor that is arranged outside the stator and that is directly coupled to the hub. In this case the arrangement of the rotor and the hub needs to be rotatably supported by at least one bearing.
The document WO 2013/034391 A2 discloses a direct-drive wind turbine using a single sliding bearing. In this bearing a multitude of closely spaced pads are mounted on a rotating outer ring of the bearing connected to the hub. The concave sliding surface of these pads slide on a sliding surface of an inner part. Details concerning pads that can be used in such an arrangement are e.g. disclosed in the document WO 2018/166660 A1.
Any kind of sliding bearing, especially sliding bearings for relatively heavy and strongly loaded parts, like the hub of a wind turbine, will cause a certain wear and tear of the sliding surfaces, especially of the pads. While this wear and tear can be reduced by using a fluid film bearing instead of a normal sliding bearing, a certain amount of wear and tear is still unavoidable, especially when a fluid-dynamic bearing is used, since the fluid film is only established in these bearings once a certain rotational speed is reached. This is especially true, since the pads typically have an acute angle on the edges of the sliding surfaces to ensure that their shape matches the sliding surface of the inner part. Generally, it is therefore necessary to exchange the pads of such a bearing in certain intervals.
Such an exchange can be problematic in the previously discussed bearing, since it is either necessary to access the pads from the outside of the hub or to provide a dedicated crawl space within the hub to access the pads.


A method of grinding a substrate is provided. A substrate including a first main surface having a semiconductor layer formed thereon and a second main surface opposed to the first main surface is prepared. A support film is attached to the first main surface using a glue. The second main surface of the substrate is ground so as to reduce a thickness of the substrate. The support film is removed from the first main surface by applying force to the support film in a non-traverse direction.

The present disclosure relates to a method of grinding a substrate and in particular, relates to a method of grinding a substrate on which a semiconductor layer is formed and a method of manufacturing a semiconductor light emitting device using the same.
In manufacturing a semiconductor device, a process of reducing a substrate thickness, that is, a wafer thickness, has been employed.
Specifically, in a manufacturing process of a semiconductor device, such as a semiconductor light emitting diode (LED) or a power semiconductor device, a process of grinding a substrate has been undertaken in order to facilitate the cutting of the substrate (or a wafer) after forming a semiconductor layer thereon or to realize a slim feature of the semiconductor device. In particular, using conventional methodologies, such a process has been limited to being applied to a substrate having a high degree of hardness.
Further, strength of the substrate having a reduced thickness during or after the grinding thereof may be rapidly degraded, the substrate can be easily damaged or broken. Also, an additional cleaning process may be needed and thus results in a lower process efficiency of the manufacturing process.

Method of grinding substrate and method of manufacturing semiconductor light emitting device using the same


Methods of fabricating light emitting diodes and light emitting devices are provided that include a substrate, an n-type epitaxial region on the substrate and a p-type epitaxial region on the n-type epitaxial region. At least a portion of the p-type epitaxial region comprises a mesa with respect to the substrate. An ohmic contact is provided on an exposed portion of the p-type epitaxial layer. The ohmic contact is self aligned to a sidewall of the mesa and to the p-type epitaxial layer such that a sidewall of the ohmic contact is substantially aligned with a sidewall of the mesa and to the p-type epitaxial layer.

1. Field of the Invention
The present invention relates to semiconductor devices, and more particularly to light emitting devices having an ohmic contact formed on an epitaxial layer.
2. Description of the Related Art
Light emitting diodes (or LEDs) are well known solid state electronic devices capable of generating light upon application of a sufficient voltage. Light emitting diodes generally comprise a p-n junction formed in an epitaxial layer deposited on a substrate such as sapphire, silicon, silicon carbide, gallium arsenide and the like. The wavelength distribution of the light generated by the LED depends on the material from which the p-n junction is fabricated and the structure of the thin epitaxial layers that comprise the active region of the device.
Commonly, an LED includes an n-type substrate, an n-type epitaxial region formed on the substrate and a p-type epitaxial region formed on the n-type epitaxial region. In order to facilitate the application of a voltage to the device, an anode ohmic contact is formed on a p-type region of the device (typically, an exposed p-type epitaxial layer) and a cathode ohmic contact must be formed on an n-type region of the device (such as the substrate or an exposed n-type epitaxial layer).
Because it is difficult to make highly conductive p-type Group Ill-nitride, materials (such as GaN, AlGaN, InGaN, AlInGaN, and AlInN), lack of current spreading in the p-type layer may be a limiting factor in the performance of LEDs formed from such materials. Accordingly, it is desirable to form an ohmic contact over as much of the surface area of the exposed p-type layer as possible in order to induce current to pass through as much of the active region of the device as possible. Moreover, patterning an ohmic contact conventionally requires at least one photolithography step. Photolithography may be an expensive and time consuming step in the semiconductor device fabrication process. It is desirable to reduce the number of photolithography steps required for device fabrication.

Light emitting devices with self aligned ohmic contacts


An apparatus and method for analyzing the performance of an ATM switch, and an ATM switching system employing the same. The apparatus includes a traffic detecting portion for detecting traffic of constant bit rate connection type data and available bit rate connection type data input to the ATM switch installed in a communication network for processing a data circuit switching, and a performance analyzing portion for calculating a performance of processing the constant bit rate connection type data and the available bit rate connection type data according to information related to the detected traffic of the constant bit rate connection type data and the available bit rate connection type data. According to the apparatus and method, and an ATM switching system employing the same, performance of the ATM switch can be analyzed and the analyzed result can be used in designing the ATM switch.

1. Field of the Invention
The present invention relates to an apparatus for analyzing performance of an ATM switch, a method thereof, and an ATM switching system employing the same, and, more particularly, to an apparatus for analyzing the performance of an ATM switch with respect to a data transmission capacity for transmitting data input to the ATM switch, a method thereof, and an ATM switching system employing the same. The present application is based on Korean Patent Application No. 2001-5724 filed Feb. 6, 2001, which is incorporated herein by reference.
2. Description of the Related Art
Generally, there are synchronous communications and asynchronous communications in the communication method.
An asynchronous transfer mode (ATM) is one of the asynchronous communications that has higher data transmission efficiency when compared with time division multiplexing (TDM) of the synchronous communication methods. In the TDM method, a predetermined slot is assigned to each subscriber terminal, and thus data is transmitted only in the assigned slot. Accordingly, in the TDM method, data transmission efficiency is deteriorated, since there is a period of time when the subscriber terminal does not transmit data in the assigned slot, leaving the slot unused for the data transmission.
Compared to the TDM method, the ATM method has a higher data transmission efficiency since the ATM method makes a connection to transmit the data as necessary.
In such an ATM method, the data transmission path is determined in advance of making connection by using the connection-oriented method.
In the ATM network built by the ATM method, a cell of 53 bytes, which is a data transmission unit, is switched.
As exemplarily shown in FIG. 1, the ATM network has ATM switches for switching the cells, and also has terminals.
The ATM switches 30 are connected through a communication network, and switch the cells to the transmission path. The terminals may include computers 10, routers 20, and LAN switches (not shown), etc.
The communication services provided by the ATM network are constant bit rate (CBR) service, and an available bit rate (ABR) service. The CBR service is assigned for the connection at a constant transmission rate, while the ABR service uses a remainder transmission rate that is left after the transmission rate is assigned for connection in the CBR service.
In the ATM network, the data for the respective connections is contained in the cells (packets) and transferred through the ATM switches 30 located at the desired destination. As shown in FIG. 2, the CBR an ABR connection cells 32 are stored in buffers 31 via input ports of the ATM switches 30, and switched to output ports selected to be transferred to desired destinations. The number of CBR and ABR connections is varied dynamically according to the time.
FIG. 3 illustrates the number of connections of respective types input to the ATM switches 30 being varied according to the time. The area bounded by a dotted line, which is not hatched, represents an area where a number of CBR connections NCBR(t) are located according to the time (t). For a better understanding, specific values are given in the drawing to represent the number of CBR connections. The hatched area, which is not occupied by the NCBR(t), represents the area where a number of ABR connections NABR(t) can be located according to the time (t). A reference character 'r' represents a minimum number of connections for ensuring the ABR connections with respect to the processing capacity of the ATM switches 30, i.e., available transmission rates. 'C' represents a maximum number of connections for ensuring the CBR connections.
With a given processing capacity (transmission rate) of the ATM switches, since there is no way to obtain connection denial possibilities of CBR connections, or an average time for data transmission of the ABR connection, there is a difficulty in designing an optimum switch when building a network.

Apparatus for analyzing performance of traffic in asynchronous transfer mode (ATM) switch and method thereof, and ATM switching system employing the same


According to an aspect of the invention, there is provided an information processing apparatus including a dividing unit configured to divide coded audio data in unit of frame when the audio data is transmitted to an external device; a generating unit configured to generate packets to be transmitted to the external device based on the divided coded audio data; a transmitting unit configured to store the generated packets and transmit the stored packets to the external device; an acquiring unit configured to acquire, from the external device, parameter information supported by the external device; a determining unit configured to determine, by comparing acquired parameter information and designated parameter information, whether the transmission of the coded audio data is acceptable, and determine whether the parameter information designated by the external device includes protection information.

Recently, as wireless communication technology that can be applied to an electronic device or the like, for example, Bluetooth is known. By using the wireless communication technology of Bluetooth, audio data can be transmitted from a mobile information terminal such as a cellular phone or a portable music player to an external device such as a headset without using an audio cable.
As a profile for audio data transmission, for example, "Advanced Audio Distribution Profile (A2DP)" (Advanced Audio/Video Distribution Profile (Bluetooth SIG)), "Generic Audio/Video Distribution Profile" (Generic Audio/Video Distribution Profile (Bluetooth SIG)), or the like are known. These are specifications for transmitting real-time audio data in a streaming manner between devices having a Bluetooth connection.
For example, in a mobile information terminal such as a cellular phone or a portable music player, audio data is coded by using a format such as SBC (Sub Band Coding), MP3 (MPEG1 Audio Layer-3), ATRAC (Advanced Transform Acoustic Coding) 3, or the like and the coded data is transmitted in units of packets. An external device such as a speaker or a headset reproduces data right after reception of the data without waiting for reception of all the packets. Accordingly, a user can listen to the sound from the mobile information terminal, the portable music player, or the like in almost real-time by using the external device such as a speaker or a headset.
In addition, as technology for preventing the replication (copy) of digital contents such as audio data, SCMS-T (Serial Copy Management System-T) has been proposed. This SCMS-T is one of methods of protecting digital contents defined in "A2DP Spec V 1.0 Sec. 11 Appendix A: Audio Streaming with Content Protection". According to the SCMS-T, in order to prevent audio data transmitted in accordance with A2DP from being directly recorded in a device or output to any other device in view of copyright protection, indication of prevention of recording or outputting the audio data is sent to a device such as a headset. For this indication, 2 bits (CP-bit and L-bit) used for a copy control process in SCMS-T are inserted into a packet format as a CP (Content Protection) header, and the 2 bits (CP-bit and L-bit) are transmitted to an external device such as a headset.
Accordingly, for an external device such as a headset that does not support SCMS-T, reproduction of transmitted audio data is not allowed, and thus the transmitted audio data is not reproduced by the external device. In other words, reproduction of the transmitted audio data is allowed only for an external device such as a headset that supports SCMS-T, and thus the transmitted audio is reproduced by the external device.
In specifications defined by "Advanced Audio Distribution Profile (A2DP)" or "Generic Audio/Video Distribution Profile", a sequence of a negotiation process for various parameters such as the type of a codec, a sampling rate, and a bit rate of audio data to be transmitted or received which is performed in advance between a device having audio data (audio source) and a device receiving the audio data and a process of starting streaming transmission is defined. In addition, according to the specifications, a streaming transmission process is allowed to be started from any side between the device (SRC) having the audio data and the device (SNK) receiving the audio data.
However, when a negotiation process is performed by the lead of the device (SNK) receiving the audio data so as to start the streaming transmission process, the device (SNK) receiving the audio data cannot know various parameters such as the type of codec, a sampling rate, a bit rate, attribute information indicating whether a content requires copyright protection, and the like of the audio data transmitted from the device (SRC) having the audio data at a time when the negotiation process is started, and generally, standard parameters are designated as various parameters for starting the streaming transmission process assuredly. In other words, a standard SBC is designated as the type of the codec for the audio data, and standard values should be designated for the bit rate and the sampling rate. Even it is designated whether a CP header for adding copy control information of audio data is included, it cannot be determined that designation of inclusion of the CP header appropriate for the content can always be made. Accordingly, there is a problem that parameters optimal to the device (SNK) receiving the audio data or the like cannot be selected and set.

Fujitsu Toshiba Mobile Communications Limited