A method to create an improved hydrodynamic bearing which is relatively insensitive to changes in load and rotational speed is provided, wherein the hydrodynamic bearing is useful in a spindle motor for a disc drive or the like which is stiffer than known standard spindle motors so that the stability of the system and specifically of the actuator arm and transducer relative to the rotating disc is optimized. The hydrodynamic bearing can also be used as a bearing cartridge or as the cartridge that may be incorporated into a spindle motor or the like, where the bearing includes a shaft and at least two independent bearings each comprising a thrust plate supported on the shaft and a counter plate incorporated in a sleeve which is capable of relative rotation around the shaft.

Magnetic disc drives are used for magnetically storing information. In a magnetic disc drive, a magnetic disc rotates at high speed and a transducing head "flies" over a surface of the disc. This transducing head records information on the disc surface by impressing a magnetic field on the disc. Information is read back using the head by detecting magnetization of the disc surface. The transducing head is moved radially across the surface of the disc so that different data tracks can be read back.
Over the years, storage density has tended to increase and the size of the storage system has tended to decrease. This trend has lead to greater precision and lower tolerance in the manufacturing and operating of magnetic storage discs. For example, to achieve increased storage densities the transducing head must be placed increasingly close to the surface of the storage disc. This proximity requires that the disc rotate substantially in a single plane. A slight wobble or run-out in disc rotation can cause the surface of the disc to contact the transducing head. This is known as a "crash" and can damage the transducing head and surface of the storage disc resulting in loss of data.
From the foregoing discussion, it can be seen that the bearing assembly which supports the storage disc is of critical importance. One typical bearing assembly comprises ball bearings supported between a pair races which allow a hub of a storage disc to rotate relative to a fixed member. However, ball bearing assemblies have many mechanical problems such as wear, run-out and manufacturing difficulties. Moreover, resistance to operating shock and vibration is poor, because of low damping. Thus, there has been a search for alternative bearing assemblies for use with high density magnetic storage discs.
One alternative bearing design which has been investigated is a hydrodynamic bearing. In a hydrodynamic bearing, a lubricating fluid such as air or liquid provides a bearing surface between a fixed member of the housing and a rotating member of the disc hub. In addition to air, typical lubricants include oil or ferromagnetic fluids. Hydrodynamic bearings spread the bearing interface over a large surface area in comparison with a ball bearing assembly which comprises a series of point interfaces. This is desirable because the increased bearing surface reduces wobble or run-out between the rotating and fixed members. Moreover, the use of fluid in the interface area imparts damping effects to the bearing which helps to reduce non-repetitive runout.
However, hydrodynamic bearings themselves suffer from disadvantages, including a low stiffness-to-power ratio. These problems lead to a high sensitivity of the bearing to external loads or shock.

Spindle motor with multiple thrust plate fluid dynamic bearing


Magnetoresistive (MR) elements having flux guides defined by the free layer are disclosed. The MR element includes a free layer, a spacer/barrier layer, a pinned layer, and a pinning layer. A back edge of the free layer (opposite the sensing surface of the MR element) extends past a back edge of the spacer/barrier layer. The portion of the free layer extending past the back edge of the spacer/barrier layer defines a continuous flux guide. The flux guide is processed to reduce the conductive characteristics of the flux guide, thereby reducing current shunt loss in the flux guide.

1. Field of the Invention
The invention is related to the field of magnetoresistive (MR) elements and, in particular, to (MR) elements having a continuous flux guide defined by the free layer. More particularly, the invention relates to a flux guide of an MR element that is processed to reduce the conductive characteristics of the flux guide.
2. Statement of the Problem
Many computer systems use magnetic disk drives for mass storage of information. Magnetic disk drives typically include one or more recording heads (sometimes referred to as sliders) that include read elements and write elements. A suspension arm holds the recording head above a magnetic disk. When the magnetic disk rotates, an air flow generated by the rotation of the magnetic disk causes an air bearing surface (ABS) side of the recording head to ride a particular height above the magnetic disk. The height depends on the shape of the ABS. As the recording head rides on the air bearing, an actuator moves an actuator arm that is connected to the suspension arm to position the read element and the write element over selected tracks of the magnetic disk.
To read data from the magnetic disk, transitions on a track of the magnetic disk create magnetic fields. As the read element passes over the transitions, the magnetic fields of the transitions modulate the resistance of the read element. The change in resistance of the read element is detected by passing a sense current through the read element and then measuring the change in voltage across the read element. The resulting signal is used to recover the data encoded on the track of the magnetic disk.
The most common type of read elements are magnetoresistive (MR) read elements. One type of MR read element is a Giant MR (GMR) read element. GMR read elements using two layers of ferromagnetic material (e.g., NiFe) separated by a layer of nonmagnetic material (e.g., Cu) are generally referred to as spin valve (SV) elements. A simple-pinned SV read element generally includes an antiferromagnetic (AFM) layer, a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer. The first ferromagnetic layer (referred to as the pinned layer) has its magnetization typically fixed (pinned) by exchange coupling with the AFM layer (referred to as the pinning layer). The pinning layer generally fixes the magnetic moment of the pinned layer perpendicular to the ABS of the recording head. The magnetization of the second ferromagnetic layer, referred to as a free layer, is not fixed and is free to rotate in response to the magnetic field from the magnetic disk. The magnetic moment of the free layer is free to rotate upwardly and downwardly with respect to the ABS in response to positive and negative magnetic fields from the rotating magnetic disk. The free layer is separated from the pinned layer by the spacer layer, which is nonmagnetic and electrically conducting.
Another type of spin valve read element is an antiparallel pinned (AP) SV read element. The AP-pinned SV read element differs from the simple pinned SV read element in that an AP-pinned structure has multiple thin film layers forming the pinned layer instead of a single pinned layer. The AP-pinned structure has an antiparallel coupling (APC) layer between first and second ferromagnetic pinned layers. The first pinned layer has a magnetization oriented in a first direction perpendicular to the ABS by exchange coupling with the AFM pinning layer. The second pinned layer is antiparallel exchange coupled with the first pinned layer because of the selected thickness of the APC layer between the first and second pinned layers. Accordingly, the magnetization of the second pinned layer is oriented in a second direction that is antiparallel to the direction of the magnetization of the first pinned layer.
Another type of MR read element is a Magnetic Tunnel Junction (MTJ) read element. The MTJ read element comprises first and second ferromagnetic layers separated by a thin, electrically insulating, tunnel barrier layer. The barrier layer is sufficiently thin that quantum-mechanical tunneling of charge carriers occurs between the ferromagnetic layers. The tunneling process is electron spin dependent, which means that the tunneling current across the junction depends on the spin-dependent electronic properties of the ferromagnetic materials and is a function of the relative orientation of the magnetic moments, or magnetization directions, of the two ferromagnetic layers. In the MTJ read element, the first ferromagnetic layer has its magnetic moment pinned (referred to as the pinned layer). The second ferromagnetic layer has its magnetic moment free to rotate in response to an external magnetic field from the magnetic disk (referred to as the free layer). When a sense current is applied, the resistance of the MTJ read element is a function of the tunneling current across the insulating layer between the ferromagnetic layers. The tunneling current flows perpendicularly through the tunnel barrier layer, and depends on the relative magnetization directions of the two ferromagnetic layers. A change of direction of magnetization of the free layer causes a change in resistance of the MTJ read element, which is reflected in voltage across the MTJ read element.
GMR read elements and MTJ read elements may be current in plane (CIP) read elements or current perpendicular to the planes (CPP) read elements. Read elements have first and second leads for conducting a sense current through the read element. If the sense current is applied parallel to the major planes of the layers of the read element, then the read element is termed a CIP read element. If the sense current is applied perpendicular to the major planes of the layers of the read element, then the read element is termed a CPP read element.
When a magnetic disk drive is in operation, the ABS (sensing surface) of the read element is positioned adjacent to the magnetic disk of the magnetic disk drive to sense the magnetic flux of the transitions on the magnetic disk. The magnetic flux enters the front edge of the free layer at the ABS. The magnetic flux decays from the front edge of the free layer to the back edge, and is restricted to about zero at the back edge. Thus, it is a problem that the magnetic flux is zero in the active region (the region of the free layer between the ABS and the back edge of the spacer layer or tunnel barrier layer) toward the back edge of the free layer.
One solution to this problem is to use a flux guide. A flux guide extends beyond the back edge of the free layer and beyond the active region. Because the flux guide extends beyond the active region, the magnetic flux is restricted to zero in the flux guide and is not restricted to zero in the active region of the free layer. The amount of magnetic flux in the active region is increased with the flux guide, which enhances the MR signal in the read element.
One problem with current flux guides is current shunt loss in the flux guide. When a sense current is applied to the read element, some of the sense current is shunted away from the active region of the free layer by the flux guide. The amount of sense current shunted away from the active region negatively affects the sensitivity of the read element. This can especially be a problem in CIP read elements when the sense current is applied parallel to the major planes of the read element.

Magnetoresistive (MR) element having a continuous flux guide defined by the free layer

Hitachi Global Storage Technologies Netherlands, B.V.


The present invention relates to compositions, in particular dietary compositions, that comprise a combination of choline cation and succinate anion (2−) and nicotinamide, and use of these compositions for maintaining and enhancing the brain energy metabolism in a human, and for preventing and treating symptoms and physiological conditions associated with an imbalanced, damaged or slowed brain energy metabolism in a human subject.

Human body cells, especially in the brain, are dependent on oxygen for adenosine triphosphate (ATP) production in mitochondria. Nicotinamide adenine dinucleotide (NAD+) is a coenzyme that serves as a hydrogen carrier NADH/NAD+ between substrates of tricarboxylic acid cycle and complex I mitochondria supporting thus ATP production during the oxidative phosphorylation (Hinkle P C. Biochim Biophys Acta. 2005, 1706(1-2):1-11. At normoxia (i.e. normal oxygen supply), NADH oxidation at mitochondrial complex I contributes to about 90% of total oxygen consumption (Lukyanova L D, Kirova Y I. Front Neurosci. 2015 9:320).
Nicotinamide (CAS No. 98-92-0) is a precursor of NAD+/NADH and the vitamin B3. Nicotinamide is found in food and used as a dietary supplement. Nicotinamide is included in the list of essential medicines needed for health. (WHO Model List of Essential Medicines. World Health Organization, 2015). It has been demonstrated that nicotinamide incubation (5 mM) of fresh brain tissue slices 2 hr prior to hypoxia significantly increases total NAD(H) content, improves neuronal recovery, enhances ATP content, and prevents NADH hyperoxidation (Pavan K Shetty P K, Galeffi F., Turner D A. Neurobiol Dis. 2014, 62:469-478).
Succinic acid or salts thereof (succinates) are substrates of mitochondrial complex II. At hypoxia, a condition of a deficiency in oxygen supply of tissues of the body, succinate oxidation may contribute to 70-80% of total oxygen consumption (Lukyanova L D, Kirova Y I. Front Neurosci. 2015 9:320). Because of high acidity (pKa1=4.2 and pKa2=5.6), fumaric acid is dissociated completely at physiological range of pH 7.0-7.8 and is present in the body as dicarboxylate-anion (succinate). Succinate transport across the body is mediated by specific sodium-coupled dicarboxylate-anion transporters of SLC13 family. However, there is no specific transporting system for succinic acid or salts thereof across the blood-brain barrier (BBB), since no dicarboxylate-anion transporters were found in cerebral blood vessels or the choroid plexus (Chen X et al., J Clin Invest 1999, 103(8):1159-68). In line with this, it has been strictly proven that dicarboxylates cannot penetrate BBB in vivo (Hassel B et al., J Neurochemistry 2002, 82:410-419). Because of lack of transport capacity across the BBB, orally administered succinic acid and salts thereof generally are not effective in the treatment of disorders of central nervous system (CNS).
Choline salt of succinic acid (2:1) (hereinafter DISU or choline succinate (2:1) salt) is a specific salt of succinic acid that has been demonstrated to be surprisingly effective in the treatment of CNS disorders and enhancing cognitive function in animals (U.S. Pat. Nos. 7,666,90; 8,673,977). Further, it has been demonstrated that DISU salt is able to slow whole-brain ATP decline, in particular, it has a protective effect on the brain energy metabolism during global ischemia (Pomytkin I, Semenova N. DokI Biochem Biophys 2005, 403:289-92). Treatment with DISU could preserve cognitive function in animals in a model of chronic cerebral hypoperfusion (Storozheva Z et al., BMC Pharmacol 2008, 8:1).
Choline is an essential nutrient for healthy metabolic functioning. Choline is needed for biosynthesis of acetylcholine, neurotransmitter crucial for communication of neurons in the nervous system. Choline deficiency leads to neurological disorders (Zeisel S H et al, Nutr Rev. 2009, 67(11):615-623), and oral administration of choline enhances cognitive function in relatively impaired performers (Knott V et al., Pharmacology, Biochemistry and Behavior 2015, 131:119-129). An adequate intake level for choline is 550 mg/day for men and 425 mg/day for women. The de novo choline synthesis is not sufficient to meet human requirements and choline must be obtained through the diet containing choline-rich foods, like eggs and shrimps, or as nutritional addition to a normal diet, for example in form of choline salts.
Aging results in a physiological cerebral hypoxia, i.e. a deficiency in oxygen supply of the brain, due to a decrease of cerebral blood flow by approximately 28-50% from age of 30 to 70 years (Ogoh S and Ainslie P N. J Appl Physiol 2009, 107:1370-80). NAD+ availability and abnormal NAD+/NADH redox state are also tightly linked to aging and age-related metabolic diseases and neurodegenerative disorders (Zhu X-H., et al Proc Natl Ac Sci USA 2014, 112:2876-2881). Based on results of several studies it has been suggested that complex II plays an important role in aging (see for review Wojtovich A P., et al. Biochem Biophys Acta 2013, 1827(5): doi:10.1016/j.bbabio.2012.12.007).
In view of the fact that almost every country of the world at present is experiencing a shift in the distribution of a country's population towards older ages and huge socio-economic problems resulting from the effects of an increasing environmental and psychological pressure on the general population, it is, therefore a great need in agents, that are safe and effective as both anti-aging nutritionals and pro-energetic dietary supplements for enhancing mental endurance and brain health in general population.

Composition for enhancing mitochondrial function


A coated woven material comprising a layer of a woven scrim formed from a thermoplastic polymer in the form of at least one of fibres, filaments and tapes; and a coating on at least one side of said layer of an elastomeric polymer of ethylene and at least one hydrocarbon alpha-olefin comonomer of at least 4 carbon atoms. The elastomeric polymer has a glass transition temperature (T.sub.g) of less than -20.degree. C. and a brittleness temperature of less than -80.degree. C. The material is particularly useful as a transportation cover.

Wrapping materials intended to cover goods on trucks, or the like, are well known. For many years, such wrapping materials particularly included tarpaulins. More recently, such tarpaulins have frequently been replaced with other materials, for instance polyester filament reinforced fabrics that have been coated with polyvinyl chloride (PVC). Other examples of wrapping materials used in the transportation of goods include lumber covers. Lumber covers tend to be specialized in their construction, being intended to wrap and protect stacks of lumber from the effects of weather during actual shipping and while the lumber sits in a yard prior to sale. A typical example of lumber wrap is made of a woven high density polyethylene fabric that is coated on one or preferably both sides with an extrusion coating of low density polyethylene containing a particulate mineral filler e.g. as disclosed in U.S. Pat. No. 4,239,831 of T. W. E. Pattenden.
Materials for the covering of goods on trucks are important for many reasons. For instance, rain and/or sun may have adverse effects on the goods, causing staining, water damage, bleaching, rusting or a variety of other adverse effects. In addition, in cold climates, sand and/or salt may be distributed on roads to overcome problems caused by snow and ice, both of which can cause significant damage to goods e.g. sand blasting-type effects accompanied by corrosion caused by the salt, resulting from the spray of slush, salt/sand mixtures or the like from vehicles passing along the road or highway. In other climates, spray from the ocean may similarly cause damage to goods on the vehicle. Coverings on trucks also discourage pilfering, vandalism or the like.
Examples of wrapping materials, especially coated woven materials, include woven high density polyethylene fabrics coated with low density polyethylene and woven polypropylene fabrics coated with polypropylene, in which the fabrics are usually formed of woven tapes. Woven coated materials of such construction generally do not have good low temperature flexibility properties. In cold climates, particularly during winter in Canada, Alaska, the northern regions of the United States of America and elsewhere in other areas of the Northern Hemisphere, temperatures are below 0.degree. C. for several months of the year and may reach -40.degree. C. or lower. Thus, an ability to withstand such temperatures without cracking, splitting or the like is important, and consequently low temperature flexibility properties can be particularly important for a number of climates. While PVC-coated polyester filament reinforced fabrics exhibit a number of useful properties, including an ability to be used at low temperature, such fabrics are capable of improvement, especially with respect to weight/unit area. Flexible PVC has a T.sub.g of about -20.degree. C.
Truck tarpaulins have been made commercially from the type of fabric and coating described in the aforementioned patent of Pattenden. However, such tarpaulins fail prematurely from damage due to wind whip and cold temperature stiffness/cracking. An improvement in toughness of the low density polyethylene (LDPE) coating employed in such tarpaulins would be beneficial. Low density polyethylene is understood to have a brittleness temperature as measured by the procedure of ASTM D746 of about -80.degree. C.


Provided is a mobile terminal performing a mosquito repelling function. The mobile terminal with the mosquito repelling function comprises: a frame forming a full length part to minimize the thickness of a mosquito repelling device and ensure sufficient rigidity; a battery provided on the back surface of the frame; a rear cover detachably coupled to the back surface of the frame; and a mosquito repelling device coupled to the inner surface of the rear cover.

Functions of a mobile terminal are diversifying. For example, there are functions of data and voice communications, photo taking and video shooting using a camera, voice recording, music file playback through a speaker system, and outputting an image or a video on a display. An electronic game play function is added to some terminals, and some terminals perform a multimedia player function. In particular, a recent mobile terminal may receive a multicast signal that provides visual content such as a broadcast, the video, or a television program.
In addition to such functions that actively use the display, third functions that are not directly relevant to the display may also be performed using a battery or a circuit disposed in the mobile terminal.
As one of such third functions, a mosquito repellent function may be implemented in the mobile terminal. The mosquito repellent function generates high frequencies that mosquitoes dislike to repel the mosquito around the mobile terminal. This may be implemented as a piezo speaker that generates the high frequencies, and the like.
When the mobile terminal has the mosquito repellent function, it is required that physical components for performing the mosquito repellent function are respectively formed in the smallest sizes as much as possible and in appropriate shapes, and are properly coupled with each other. Further, in order to perform vibration in a proper range, the smallest sizes of the components and a vibration space must be secured. At the same time, stiffness, and structural and functional reliabilities of a device are still required to the physical components and the mobile terminal that perform the mosquito repellent function that requires miniaturization.

Mosquito repellent device and mobile terminal


A sachet product that includes a biodegradable and/or home compostable sachet comprising a front film and a back film. In some examples, the front film and back film can include a middle layer that can contain paper with greater than 85% cellulose and an inner layer that can include different material, including but not limited to polyvinyl alcohol or polyhydroxylalkonate. The sachet can include a compartment adapted for storing a solid article where the solid article is an open cell foam. The open cell foam can include a water-soluble polymer and a surfactant.

Sachet packaging of small amounts of consumer products such as shampoo, conditioner, body wash, and other consumer products and laundry detergents can be desirable to consumers who want inexpensive, single use products. This includes people who cannot afford, cannot transport, and/or cannot store large containers that are typically found in developed countries.
Sachet packaging is generally made of a laminate film containing layers of plastic and aluminum. There is interest in using a biodegradable and/or home compostable sachet. However, there are many challenges with creating acceptable biodegradable and/or home compostable sachets, especially ones that store liquid products that can be sold and stored in non-climate controlled high frequency stores in humid climates. Many biodegradable and/or home compostable sachets have a high moisture vapor transmission rate (MVTR), which limits the practicality for consumer products due to high water loss (for liquid products) or water gain (for powders and other solid products).
It can be advantageous to sell solid articles in sachet packaging because (1) solid articles can be lightweight, as compared to a similar dose of a traditional liquid products; (2) solid articles can provide consistent dosing; and (3) there is considerably less product wasted, as compared to dispensing liquid product from a bottle or sachet.
Furthermore, the sachets can be subjected to relatively high compressive loads (up to about 20 psig/137.9 kPa) during shipping, storage, and at the point of sale. These compressive loads can damage the product and/or package.
Therefore, there is a need for a sachet for storing a solid single use consumer product where the sachet is biodegradable and/or home compostable, provides an acceptable moisture barrier, can withstand compressive loads of up to 20 psig (137.9 kPa), where the consumer product is shelf stable for at least 18 months, and that can be recycled in a paper repulping system or be organically recycled (e.g. via home composting or industrial composting where available).

Biodegradable and/or home compostable sachet containing a solid article


A light emitting device is provided that includes a substrate, a light emitting unit formed on the substrate, and an encapsulation unit. The encapsulation unit may include a first region corresponding to the light emitting unit and a second region coalesced with the substrate. The encapsulation unit of the first region or a part of the encapsulation unit of the first region may have a positive curvature.

1. Field
Embodiments of the present invention may relate to displays. More particularly, embodiments of the present invention may relate to a light emitting device.
2. Background
A light emitting device is a self-light emitting device having a low driving voltage and a high emission efficiency that can emit a variety of colors. The light emitting device may be made thin and may have patterns easily formed therein. The light emitting device is a type of flat display device.
The light emitting device may include two electrodes and a light emitting unit having a light emitting layer formed between the two electrodes.
The light emitting device may experience degradation due to moisture, oxygen, ultraviolet rays and so on. The degradation may include external forces applied to the device in a fabrication process of the device or during use.
External moisture and oxygen may oxidize a light emitting unit that includes an organic material, and thus may degrade and damage the light emitting unit. Thus, moisture and oxygen may have a detrimental effect on lifespan of the light emitting device. Accordingly, a sealing structure for encapsulating the light emitting unit may be used. The encapsulation unit or an encapsulation substrate formed of metal, glass, plastic or the like may be connected to a lower substrate using a sealing material, such as a sealant, in order to encapsulate the internal elements.
If external pressure is applied, the light emitting unit may experience degradation and damage due to contact of the light emitting unit and the encapsulation unit or contact of the light emitting unit and a getter.
If the light emitting device is used for a long period of time, a thickness of the getter that absorbs moisture may become thick. Thus, the getter and the light emitting unit may be brought in contact with each other, thereby causing partial degradation and/or damage to the light emitting unit.
If the size of the getter is decreased in order to prevent the problem, the light emitting device may not provide sufficient moisture absorption. Further, if the space between the light emitting unit and the getter is too large, then an overall thickness of the light emitting device may become too thick.


The present invention relates to organic siloxane resins and insulating films using the same. The insulating films are manufactured by using organic siloxane resins, wherein organic siloxane resins are hydrolysis-condensation polymers of silane compounds comprising one or more kinds of hydrosilane compounds. They have superior mechanical properties and a low electric property, and therefore, are properly usable for highly integrated semiconductor devices.

Recently, the line width used for manufacturing semiconductor devices has been reduced rapidly as the degree of integration of semiconductor devices has been increased. Generally, the speed of semiconductor devices is proportional to the switching speed of gates and the signal transmission speed. The latter is determined according to the RC delay indicated in terms of the multiplication of resistance of wiring materials and electrostatic capacity of interlayer insulating films. As the design rules of semiconductor devices are reduced, the speed of a high-density chip is determined according to the RC delay rather than the speed of gates. Therefore, in order to manufacture high-speed chips, conductors having a low resistance and insulating materials having a low dielectric constant should be used. For this reason, the conventional aluminum wiring is replaced with copper wiring, and the development of insulating films with a low dielectric constant is in progress. The use of the low dielectric materials increases the speed of semiconductor devices and decreases the power dissipation and crosstalk noise.
In the meantime, a general example of interlayer insulating materials of semiconductor devices is SiO2 manufactured in the gaseous vapor deposition method having a dielectric constant of 4.0, and silicate doped with fluorine (F—SiO2) is applied for some devices as a low dielectric material. However, in case of F—SiO2, it may be difficult to lower the dielectric constant to 3.5 or less since the state may thermally become unstable as the content of fluorine is increased.
Recently, many organic and inorganic polymers having a low polarity and a high thermal stability have been presented to solve this problem. Organic polymers having a low dielectric constant are known to include polyimide resins containing or not containing fluorine, polyarylene ether resins, polyaromatic hydrocarbon resins, etc. Most of these organic polymers have a dielectric constant of 3.0 or less. However, they have a very high linear expansion coefficient, and also have a low glass transition temperature and thus elasticity thereof remarkably decreases at a high temperature. The resulting low thermal stability can deteriorate the reliability of devices. Recently, in order to solve thermal stability problems of organic polymers, the development of organic silicate polymers using a sol-gel process has emerged. Organic silicate films are obtained by hydrolyzing and condensing organic silanes, and curing them. Polysilsesquioxane has a comparatively low dielectric constant of less than 3.0 and is stable at 450° C. However, the dielectric films prepared with polysilsesquioxane may crack at >1 μm due to contraction stress during a hardening process, and the dielectric constant of the films is in the range of 2.7 to 3.1. Therefore, it is not sufficient for the material having a good mechanical property and a dielectric, 2.5 or less which is necessary for the semiconductor process in the future.
In order to form insulating films having a dielectric constant of 2.5 or less, it has been proposed a method of adding an organic polymer template to polysilsesquioxane and forming low-density insulating films having nano-pores through pyrolysis after hardening. However, this method is problematic in that the strength of low-density insulating films is not sufficient; it is likely for organic materials not to be decomposed completely but to remain; the sizes of pores are increased if the compatibility between organic polymers and polysilsesquioxanes is lowered; etc. In addition, porous low dielectric films have been prepared by using an organic polysiloxane manufactured through hydrolysis and condensation of general alkoxy silanes under a basic condition. However it is difficult to obtain siloxane polymers having sufficient mechanical properties.
While studying organic polysiloxane resins and compositions in order to manufacture insulating films having a low dielectric constant and superior mechanical properties, the inventors of the present invention have found that organic polysiloxane resins manufactured through hydrolysis and condensation of a specific silane compound under a basic condition have more superior mechanical properties compared to porous low dielectric films manufactured by using organic polysiloxane resins manufactured through hydrolysis and condensation of only a general silane compound under a basic condition or organic polysiloxane resins and organic polymers manufactured through hydrolysis and condensation under an acidic condition, and completed the present invention based on the above.

Organic siloxane resins and insulating film using the same


Example implementation relates to a method for establishing a dynamic VPN tunnel between branch gateway devices based on metric data. A branch orchestrator receives metric data from VPNC device. The metric data includes data center bandwidth and processor utilization of the VPNC device. The metric data is derived from the traffic being routed via the VPNC device. When the metric data associated with traffic between a first branch gateway device and a second branch gateway device is above a Service Level Agreement (SLA), a dynamic branch to branch VPN tunnel is established to route the traffic between the first branch gateway device and the second branch gateway device. The VPN tunnel between the branch gateways can be teared when the load at the VPNC device reduces.

Wide Area Networks (WANs) allow enterprises to extend their networks over large distances by connecting branch networks to data centers in order to deliver applications and services required to perform a variety of functions
An SD-WAN simplifies management and operation of the WAN by decoupling networking hardware from the control mechanism that handle network policies and determine availability of network bandwidth for appropriate routing of traffic. The SD-WAN matches the application requirements to the network bandwidth available at the branch network. Enterprises with large number of branch offices or sites connect the branch network to the data center using virtual private networks (VPNs) tunnels over internet. The traffic from client devices in the branch network are routed to concentrator devices in the data center using Internet Protocol Security (IPSec) based VPN tunnels.
With increasing number of branch offices communicating with the concentrator devices in data center, bandwidth consumption and resource utilization increases at the concentrator devices leading to higher cost in operation of the WAN. In addition, the concentrator devices may get overloaded leading to packet latency, drops, and jitter.

Metric based dynamic virtual private network (VPN) tunnel between branch gateway devices

Hewlett Packard Enterprise Development LP


A security gate actuator includes a main ball screw, a main ball nut, and a drive shaft stage. The main ball screw may further include a circular channel disposed on an outer surface of the main ball screw and at least one drive ball disposed in the circular channel. The main ball nut may be disposed on the main threads of the main ball screw and configured to translate rotational motion of the main ball screw to linear motion of the main ball nut. The drive shaft stage may include a drive shaft end and a drive shaft tube attached to the drive shaft end, the drive shaft end coupled to the main ball nut. The drive ball may push against the drive shaft tube to translate the rotational motion of the main ball screw to rotational motion of the drive shaft tube.

Some high-end security gate systems, such as those used in front of government buildings, financial buildings, and research facilities, involve a large steel or steel and concrete bollard that rises out of and retracts into the ground to block vehicle passage when the bollards are raised and allow vehicle passage through an opening in the security gate when the bollards are lowered into the ground. Examples of a set of bollards are illustrated in FIGS. 1A and 1B. The size and strength of the bollards used depends upon the particular level of security needed for the area being protected, but generally the bollards are large and strong enough to withstand being hit by an automobile, and some can withstand being hit at high speeds by an armored truck. Approximately 90-95% of actuating systems for raising and lowering the bollards work hydraulically, with a hydraulic actuating unit extending and retracting the bollards, and approximately 5% work pneumatically. Each has its benefits and problems.


Changing the contour of a recess (12) in a body of solid material to a revised contour wherein a pattern (24) is made having the revised contour and this pattern is placed in the recess with a curable plastic material (31). After the curable plastic material is hardened, the pattern is removed providing the revised contour (30) of the recess. The body of solid material can be a flow channel block.

This invention relates to experimental flow channel blocks and the method of making inserts of curable plastic material to change the size and shape of the flow channels.
In the design and production of experimental flow channel blocks and other metal components the optimum contour of the flow channel has been provided by cut and try machining. This is an expensive and time consuming process. Machining metal inserts to change the flow channel contour has also not been satisfactory because of the time required and the difficulty in machining the inserts to fit in the flow channels. Utilizing a curable plastic material to produce a tire mold is disclosed in U.S. Pat. No. 5,449,483 where the plastic is used as a resin backing for a reinforced shell formed on a model. Also in U.S. Pat. No. 4,858,881, a tire mold surface is provided by pouring an epoxy over a tire sidewall in a mold box. Patterns have also been used in making molds for casting metal products, however, none of these methods have suggested an inexpensive method of modifying a flow channel to determine the optimum contour for the flow of extrudates, especially those used for tire components.
The present invention is directed to a method of providing a flow channel of the optimum size and shape in a metal flow channel block with a minimum cost and in a short period of time. The existing flow channel in the flow channel block is filled with a blank of an easily machinable material, such as machinable wax. This blank hardens and after removal from the flow channel recess may be easily machined to provide a pattern having a size and shape believed to have the optimum contour for a particular operation. A release agent may be applied to the pattern which may then be placed in the flow channel with a thermally conductive epoxy casting resin. After the epoxy is cured and hardened to form an insert, the pattern is removed. The blank may also be an easily machinable block of material of a different shape than the flow channel.
In accordance with one aspect of the invention, there is provided a method of changing the contour of a first recess in a body of solid material to provide a second recess characterized by;
(a) shaping a pattern having the size and shape of the second recess,
(b) placing the pattern and a curable plastic material in the first recess,
(c) hardening the curable plastic material to form an insert; and
(d) removing the pattern from the insert to form the second recess.
In accordance with another aspect of the invention, there is provided a flow channel block having a first recess characterized by an insert of curable plastic material in said first recess, a second recess in said insert providing a flow channel having a revised contour and being formed by a pattern placed in said first recess with said curable plastic material of said insert in a plastic condition and removed after hardening of said curable plastic material.


A method for eliminating defects in single crystal silicon, which comprises subjecting single crystal silicon prepared by the CZ method to an oxidation treatment and then to an ultra high temperature heat treatment at a temperature of at least 1300° C., or comprises subjecting single crystal silicon which is prepared by the CZ method and is not subjected to an oxidation treatment (a bare wafer) to an ultra high temperature heat treatment in an oxygen atmosphere and at a temperature of higher than 1200° C. and lower than 1310° C. The method allows the elimination of void defects present in single crystal silicon with reliability.

Silicon wafers are manufactured by growing ingots by the CZ (Czochralski) method. Specifically, a quartz crucible is provided inside a CZ furnace, and polycrystalline silicon (Si) is heated and melted inside this quartz crucible. Once the melting stabilizes, an ingot of single crystal silicon is pulled out of the silicon melt inside the quartz crucible by a pulling mechanism.
Oxygen is eluted from the quartz crucible in the course of the melting, and this oxygen melts inside the ingot of single crystal silicon. Consequently, an ingot of single crystal silicon usually contains about 5×1017 to 2×1018 (atoms/cm3) (ASTM F121-79) of oxygen. In this Specification, numerical values for oxygen concentration will be as set forth in ASTM F121-79.
The molten portion consisting of the boundary between the melt and the single crystal ingot does not cool down as soon as it is pulled out, and instead is cooled through hysteresis. In the course of this hysteresis, holes become supersaturated under ordinary pulling conditions. These holes group together to form polyhedral cavity defects, called void defects, in an as-grown single crystal silicon ingot. Since the silicon ingot is in a state in which oxygen has been dissolved to the point of supersaturation, oxide films are formed during cooling on the inside of the cavities. Void defects are called grown-in defects because they are formed during single crystal growth by the CZ method. Defect pits produced by the appearance of void defects on the surface of a silicon wafer are called COPs.
Void defects adversely affect yield and the reliability of manufactured semiconductor devices when such devices are manufactured by adding device layers to a silicon wafer.
It is therefore necessary to eliminate void defects, and annealing a silicon wafer at a high temperature used to be considered the best approach to eliminating void defects. However, if silicon wafers are annealed one by one, there is the danger that thermal strain will be produced and the support members supporting the silicon wafers will be subjected to stress and lose some of their durability, or that crystal defects called slips will be produced.
The above problems have been solved by performing stack annealing rather than heat treating silicon wafers one at a time at high temperature, as disclosed in Japanese Patent Application Laid-Open No. 10-74771. Specifically, the above-mentioned application states the following.
(a) The disclosed invention discusses an attempt to eliminate void defects by laminating a plurality of silicon wafers into a group, vertically stacking one or more groups of silicon wafers, orienting the silicon wafers in each group, and performing a high-temperature heat treatment (stack annealing).
(b) It is stated that void defects are eliminated when silicon wafers are heat treated at a high temperature of between 1100 and 1380° C. In this case, it is stated that void defects are eliminated in any conceivable atmosphere for the heat treatment, such as an oxygen gas atmosphere, oxygen gas-containing atmosphere, inert gas atmosphere, or reductive gas atmosphere.
(c) Because stacked silicon wafers are difficult to separate after heat treatment, it is stated that separation after heat treatment can be facilitated by forming an oxide film on the silicon wafers ahead of time, and stack-annealing in an atmosphere of hydrogen or argon gas.
Thus, it used to be thought that void defects disappeared when silicon wafers were subjected to high-temperature heat treatment.
In view of this, the inventors of the present invention conducted follow-up tests under the temperature and atmosphere conditions given in the above-mentioned publication.
As a result, it was found that not only do void defects in silicon wafer not disappear, they actually become larger.
FIGS. 1b and 1c schematically illustrate the follow-up testing that was conducted.
As shown in FIG. 1b, the inventors first readied a silicon wafer (silicon substrate) 1 with a low oxygen concentration (an initial oxygen concentration of about 9×10−17 (atoms/cc)). As-grown void defects 3 with a diameter of about 100 nm were present in this silicon wafer 1.
This silicon wafer 1 was then subjected to ultra high temperature heat treatment at 1300° C. or higher in an oxygen gas atmosphere (in which the oxygen gas had a 100% oxygen partial pressure) or an oxygen gas-containing atmosphere (in which the oxygen gas had an oxygen partial pressure of at least 0.5%). As a result, it was confirmed that the void defects 3 in the as-grown silicon wafer 1 grew from a size of about 100 nm to about 500 nm. Also, as shown in FIG. 1c, silicon wafers 1 were stacked, and these stacked silicon wafers 1 were subjected to an ultra high temperature heat treatment at 1300° C. or higher and in the same oxygen gas atmosphere or oxygen gas-containing atmosphere, whereupon it was confirmed that once again the void defects 3 became larger around the outer periphery of the middle silicon wafers 1 and on the oxide film 2 side of the uppermost and lowermost silicon wafers 1.
When an ultra high temperature heat treatment is performed at 1300° C. or higher and in an atmosphere of argon gas or another such inert gas, or in an atmosphere of hydrogen gas or another such reductive gas, silicon oxides (SiOx) that sublimate and separate from the silicon wafer 1 foul the reaction tube or boat, and lead to the deterioration of the SiC boat itself. To prevent this furnace fouling and decrease in furnace durability, it is essential that when the high-temperature heat treatment at 1300° C. or higher be performed substantially in an oxygen gas-containing atmosphere or an oxygen gas atmosphere.

Method for vanishing defects in single crystal silicon and single crystal silicon


A minimally invasive implant, means for insertion, and description of how to most efficiently use it are described n several embodiments. This implant preferably has a segmented looping memory for storing triggered physiologic events. Preferred events for setting autotriggers to record physiologic signals occurring during events include arrhythmias and syncopal events. Preferably the device can function without a microprocessor. An outside device or other patient activated manual trigger is included. Auto triggers and manually set triggers may be of different sizes. The preferred physiologic events are ECG signals. Electrode spacing can be critical. Additional sensors may be provided to the device. Preferred communications with the device is through telemetry such as is used for pacemakers and other implanted devices.

Syncopal events and arrhythmias of the heart are particularly problematic for diagnostic physicians to observe in living patients. These events, can be of short duration and sudden onset, coming with little or no warning, and may happen very infrequently. Holter monitors are well known for monitoring electrocardiograms periods of time amounting to days or perhaps a week, but these are bulky and are applied externally to the body and interfere with the patient's normal life, making them impractical for long term use. Further, patient compliance cannot always be guaranteed, and is a common problem in use of the Holter devices. Problems with external monitors and associated recorders also include inability of some patients to abide the attendant skin irritation. Bulky or expensive special purpose devices may need to be available and maintained. Removal is required for showering, and so on. Any time a living body needs to have a long term monitoring of a physiologic event that is intermittent or infrequent or both, all these problems come into focus. Therefore, there exists a need for minimally intrusive long-term monitoring of the patient's physiologic events and status. This is particularly indicated in, but not limited to patients with cardiac arrhythmias and vasovagal syncope to provide sufficient evidence for diagnostic purposes and for research into the causes and effects of such events. Patients have come to accept long term implants of small items for many things, including birth control, for example, like the "Norplant" (.TM. of Wyeth Laboratories) devices which secrete birth control hormones for perhaps a year before they need replacing. Accordingly it is believed that small device implants for long term implant will be well tolerated by the patient population to be served by this invention.
Many attempts to address some of these problems have been made and met with limited success. The problem has been long existing. The Instromedics approach is seen in the Mills, et al patents (U.S. Pat. Nos. 5,333,616; 5,289,824 and 5,111,396) for a wrist worn monitor for ECG's which include features like patient triggering and microprocessor determination of event types (QRS detection). Wrist worn devices are also shown in the Righter patents issued to assignee Ralin, including U.S. Pat. Nos. 5,226,425 and 5,365,935. Jacobsen, et al in U.S. Pat. No. 5,513,645 describes multiple resolution storage for ECG's (ELA Medical is the assignee), and Snell's U.S. Pat. No. 5,518,001 vaguely describes a patient triggered recording device with multiple sensors and patient triggering(assigned to Pacesetter). InControl's approach is seen in the Yomatov patents, U.S. Pat. Nos. 5,411,031 and 5,313,953 which seems to concentrate on beat to beat timng records, suggests the use of an arrhythmia detector, and does mention the possibility of leadless electrodes for monitoring cardiac signals. Examples of an external monitor/recorders can be found in Segalowitz' patents, including U.S. Pat. No. 5,511,553, and Salo's U.S. Pat. No. 5,417,717. Another well known event recorder is the "King of Hearts" (.TM. of Instramedix) which records pre-event and post-event data.
Monitoring can be done using implantable pulse generators such as pacemakers and other heart stimulating devices or devices with leads in the heart for capturing physiologic parameters, including the ECG. However, the expense and risk from implanting an intracardiac lead and/or a pacemaker with special monitoring functions is something both patients and physicians would prefer to avoid. Such devices, in addition to performing therapeutic operations, may monitor and transmit cardiac electrical signals (e.g., intracardiac electrograms) to an external diagnostic devices typically with leads fixed in the patient's heart, to observe electrical activity of a heart. It is common for implanted cardiac stimulation devices to send intracardiac electrogram signals to a monitoring device, such as an external programmer, to allow a user to analyze the interaction between the heart and the implanted device. Often the user can designate that the communication from the implantable device to the programmer include a transmission of codes which signal the occurrence of a cardiac event such as the delivery of a stimulation pulse or a spontaneous cardiac depolarization.
For example, U.S. Pat. No. 4,223,678, entitled "Arrhythmia Recorder for Use with an Implantable Defibrillator", issued to Langer et al. on Sep. 23, 1980, discloses an arrhythmia record/playback component within an implantable defibrillator. ECG data is converted from analog to digital (A/D) form and stored in a first-in, first-out memory. When the defibrillator detects an arrhythmia event, it disables the memory so that no further ECG data is recorded in the memory until a command is received from an external monitoring device. This command requests the implantable defibrillator to transmit the stored ECG data to the monitoring device via telemetry. Langer et al. in U.S. Pat. No. 4,407,288, entitled "Implantable Heart Stimulator and Stimulation Method", issued Oct. 4, 1983, discloses a programmable, microprocessor based implantable defibrillator which senses and loads ECG data into a memory via a direct memory access operation. A processor analyzes this ECG data in the memory to detect the occurrence of an arrhythmia event afflicting a patient's heart. Upon such an event, the defibrillator may generate a therapy to terminate the arrhythmia event and store the ECG data sequence of the event, for transmission to an external monitoring device and later study. In normal circumstances, when no arrhythmia event is occurring, the defibrillator continuously overwrites the ECG data in the memory.
U.S. Pat. No. 4,556,063, entitled "Telemetry System for a Medical Device", granted to D. L. Thompson et al, 1985, teaches a pulse interval telemetry system capable of transmitting analog data, such as sensed intracardiac electrogram signals, without converting analog data to a digital numeric value. The Thompson et al. telemetry system is capable of sequentially transmitting both digital and analog data, individually and serially, in either an analog or a digital format, to a remote receiver. The features and capabilities of these pacemaker/defibrillator devices is now well known, but the problems in long term monitoring for events and adequate recordation remain.
In the December 1992 Vol. 15 edition of PACE (15:588), a feasibility study was done for implantable arrhythmia monitors and reported in an article by Leitch et al. Subcutaneous, Bipolar "Pseudo-ECG" Recordings using an Implantable Monitoring System and at chaired poster presentation of the North American Society of Pacing and Electrophysiology (NASPE) an implantable monitoring system was described using the pacemaker that had been altered to use a point on the can as an electrode and to have an electrode mounted into the connector block thereof. This was presented to NASPE in Munich in 1994 by Brian Lee of Medtronic, Inc. A photograph of the device shown in that poster presentation was published by the American Heart Association Inc. in 1995 by Andrew Krahn, M.D. in an article entitled "The Etiology of Syncope in Patients with Negative Tilt Table and Electrophysiological Testing", pp. 1820 of CIRCULATION, 1995; 1992. The initial thinking for this started in NASPE 1991 in an Abstract published in PACE, 1991, 14:677 authored and titled: Leitch, J W, Klein, G J, Yee, Lee B B, Kallok, M, Combs, B, Bennett, T: Feasibility of an Implantable arrhythmia Monitor.
Further, a leadless implantable sensor for cardiac emergency warning was described in U.S. Pat. No. 5,404,887 issued to Knowlan et al. which detects heart events through impedance measurement sensed using a coil. See also Yomato et al, U.S. Pat. No. 5,313,953 which describes (in FIG. 26) a large but leadless implant.
With sufficient hardware and connections to the body, numerous other physiologic parameters may be sensed as is pointed out in U.S. Pat. No. 5,464,434 issued to Alt and U.S. Pat. No. 5,464,431 issued to Adams et al.
Accordingly, there still exists a need for a more acceptable recording and monitoring device capable to maintain a data record over a long period of time and highlighting or least capturing those physiologic events that are of interest to a diagnostic, research or therapeutic study, and particularly those physiologic events that are required for correct diagnosis and therapy. Further, it has heretofore been unreasonably expensive and overly invasive to the patient to implant monitors for simple recording functions and particularly to implant intracardiac and intravascular monitors for simple recording functions. Many of the features of this invention are designed to ameliorate both these problems.

Minimally invasive implantable device for monitoring physiologic events


Methods for identifying a vehicle using a predetermined location are provided, as well as a radio beacon and an onboard unit for use with the methods. One method comprises: carrying, on the vehicle, an onboard unit that broadcasts status messages that each indicate a current position of the onboard unit and a radio identifier that changes after each or several status messages; receiving at least one status message in a radio beacon; detecting a location usage of the vehicle by evaluating the status message(s) based on the position(s) indicated therein with respect to the predetermined location; transmitting an identification request from the radio beacon to the onboard unit addressed according to the radio identifier from the status message(s); receiving and conducting a legitimacy check of the identification request in the onboard unit and, if the request is legitimate, transmitting an identification of the onboard unit to the radio beacon.

1. Technical Field
The present application relates to a method for identifying a vehicle using a predetermined location, and further relates to a radio beacon and an onboard unit for use with the method.
2. Background Art
Methods for identifying vehicles are required, for example, so as record, monitor, authorize and/or impose tolls (charge fees) for the usage of locations by vehicles. Such usages of locations can, for example, include the entering of areas to which access is limited or that are monitored, a fee-based stay at a particular location, for example a parking lot that is subject to a charge, or the use of traffic routes subject to tolls, such as highways or inner cities (city toll), and the like. According to known vehicle identification methods, license plate numbers (registration plates) are read by way of optical character recognition (OCR), or the vehicles are equipped with onboard units (OBUs) having a unique identification, which can be read out via a radio interface such as dedicated short range communication (DSRC), radio frequency identification (RFID), wireless local area network (WLAN), wireless access for vehicular environments (WAVE), or the like.
So as to create a clear association of a wirelessly read OBU identification with the location used by the vehicle, presently radio beacons, which are used for wireless reading, are mounted on special installations ("gantries") at the location to be monitored and equipped with narrowly defined radio coverage ranges. Alternatively, satellite navigation-based onboard units are employed that transmit the self-located position data via a mobile communication network to a back office, which performs a map matching with the locations to be monitored. All of these known methods require not only special, complex installations, both in the vehicle and on the road, but also disclose the identity of the OBU (in the form of a wirelessly read OBU identification), even if no location usage requiring monitoring exists, which is objectionable for data protection reasons.

This patent is subject to a terminal disclaimer.

Method and devices for identifying a vehicle using a location


Methods for transferring of a useful layer from a support are described. In an embodiment, the method includes for facilitating transfer of a useful layer from a support by providing an interface in a first support to define a useful layer; and forming a peripheral recess on the first support below the interface so that the periphery of the interface is exposed to facilitate removal and transfer of the useful layer. An epitaxial layer can be formed on the useful layer after forming the recess, with the width and depth of the recess being sufficient to accommodate the volume of residual material resulting from formation of the epitaxial layer without covering the periphery of the interface. Alternatively, an epitaxial layer can be formed on the useful layer after forming the recess, wherein the peripheral recess is configured for receiving sufficient residual material from the epitaxial layer to prevent bonding between the residual material and the useful layer.

The present invention generally relates to methods of fabricating substrates for microelectronics, optoelectronics, or optics involving transfer of a useful layer from a first support to a second support.
Various techniques have recently been developed to allow the mechanical transfer of a layer of semiconductor material from a first support to a second support. The layer may or may not have undergone component production treatments before the transfer. For example, one treatment uses buried porous layers that can be attacked chemically and has been described in U.S. Pat. No. 6,100,166. Another method utilizes substrates weakened by implanting gas species to obtain a thin useful layer that can be detached from the remainder of the material by fracture at the implanted zone. Lastly, molecular bonding techniques utilize a controlled bonding energy so that a mechanical force can result in detachment of a layer which has been temporarily bonded to a support.
When a useful layer is connected to a first support using one of the above techniques, transfer of the layer involves bringing a second support into contact with the free face of the useful layer using suitable bonding forces. The free face of the assembly including the useful layer and the first support is known as the "front" face. The transfer is completed by applying stress forces (typically tension and/or bending and/or shear forces) between the useful layer and the first support. One or more tools could be used to detach the useful layer, such as a drawing rig or a blade introduced laterally at the weakened interface to propagate a crack, or a jet of fluid can be applied to the weakened interface (see, for example, International Application Publication No. WO01/04933). When the useful layer has not undergone any component fabrication steps, then the transfer is generally carried out regardless of the bonding technique employed to affix the useful layer to the second support (such as by molecular bonding, eutectic bonding, bonding using a polymer or resin, etc).
However, if the useful layer has already undergone steps in the component fabrication process, then it is often necessary to carry out different types of deposition treatments (for example, semiconducting or semiconductive oxides or nitrides, polycrystalline semiconductor, amorphous semiconductor, monocrystalline semiconductor formed by homo- or hetero-epitaxy). For example, when a "full wafer" method is carried out in a specific reactor, the deposits have a tendency to partially or completely cover the free face of the useful layer and to overflow onto the side faces of the substrate that include the useful layer and the first support. Such an overflow produces a useful layer that is encapsulated resulting in a strengthening of the bond at the periphery between the useful layer and the first support. This condition can cause problems during the subsequent detachment step required to transfer the useful layer to the second support.

Methods for forming an assembly for transfer of a useful layer

S.O.I.Tec Silicon on Insulator Technologies


The lock cylinder with an external housing accommodates, on its rear face, a closure element acting upon a mortise lock or the like and with an exchangeably inserted core unit the casing of which contains housing pins as tumblers and a cylinder core equipped with a key channel, said cylinder core also receiving core pins as tumblers and being connected merely in a plug-in manner to coupling pins which issue from said closure element and project freely into a socket in said external housing serving for insertion of said core unit, wherein engagement of said coupling pins extends only over a rear region, which is free from key channels, of said cylinder core. A tool is provided for cutting coupling pins on lock cylinders, which is designed as a gripper with two shearing jaws which are located axially in series and rest laterally adjacently to or in a carrying mandrel such that one of said shearing jaws is arranged rigidly on said carrying mandrel resting on one gripper arm and the second of said shearing jaws connected to a second gripper arm is rotatably mounted behind it in said carrying mandrel.

The invention relates to a lock cylinder comprising an external housing which accommodates, on its rear face, a closure element acting upon a mortise lock or the like and an exchangeably inserted core unit, the casing of which contains housing pins as tumblers and a cylinder core equipped with a key channel, the cylinder core also receiving core pins as tumblers and being connected in a plug-in manner to coupling pins which issue from the closure element and project freely into a socket in the external housing, serving for insertion of the core unit.
The sockets produced as blind holes for the coupling pins arranged in pairs extend in the region of the greatest accumulation of material on both sides of the key channel and end just behind the visible side of the cylinder core. If the coupling pins are of equal lengths, this not only involves unnecessarily deep engagement with the cylinder core but also occupies a region which is better suited to the closure and tumbler variations. The security, on both sides of the key channel is thus increased unnecessarily regardless of the increased production costs.
It is an object of the present invention to construct a lock cylinder of this type which is simple to produce and is sturdy in use so that, as far as possible more space also remains transverse to the key channel in the cylinder core while maintaining the advantages of the plug-in connection with the closure element.


The present invention provides methods and compositions for attenuating expression of FcγRIIA. In general, the described methodology involves the use of RNAi constructs that are targeted to a FcγRIIA mRNA sequence.

Immunoglobulins are typically composed of two fundamental domains, the constant domain (Fc) and the variable domain. While the variable domain interacts with target antigens, the constant domain mediates a variety of biological events by interacting with other proteins of the host organism. Receptors for the Fc portion of IgG, Fcγ receptors, play an essential role in the protection of the organism against foreign antigens by removing antigen-antibody complexes from the circulation. Receptors are present on monocytes, macrophages, neutrophils, natural killer (NK) cells, platelets, and T and B lymphocytes, and they participate in diverse functions such as phagocytosis of immune complexes, NK cell ADCC, platelet activation, and modulation of antibody production by B cells.
Fcγ receptors also play a role in a number of diseases characterized by a hyperactive immune system or other undesirable immunological activity. Fcγ receptors participate in a number of autoimmune and inflammatory diseases. As an example, Fcγ receptors are implicated in immune thrombocytopenia. The pathogenic mechanism of immune thrombocytopenia involves antibody-mediated destruction of platelets in the reticuloendothelial system through Fcγ receptors (FcγRs) expressed on tissue macrophages, particularly in the spleen and liver. FcγRs signal via immunoreceptor tyrosine-based activation motifs (ITAMs) that are located either in the cytosolic domains of the receptors themselves (FcγRIIA), or within associated γ (FcγRI and FcγRIIIA) or ζ (FcγRIIIA) subunits. Following clustering of the FcγRs and their associated γ subunits by bound IgG ligands, tyrosine residues within the ITAMs become phosphorylated. The tyrosine-phosphorylated residues of the ITAMs serve as high affinity binding sites for Syk, a tyrosine kinase that contains tandem SH2 domains, which propagates intracellular signaling processes. In humans, FcγRIIA and FcγRIII are the primary activating receptors.
The FcγRIIB receptor has an inhibitory role. FcγRIIB recruits the SHIP kinase and abrogates signaling triggered by activating Fcγ receptors. The overall cellular response depends in part on the ratio of signaling mediated by inhibiting and activating receptors.
An object of the present disclosure is to provide nucleic acid agents that inhibit FcγRIIA expression and to provide methods of using such agents for therapeutic purposes.

FcγRIIA-specific nucleic acid interference


A holder for a taco shell is formed with a taco shell receiving trough which is adapted for supporting a taco shell substantially upright. The taco shell receiving trough is defined by a narrow longitudinal support base panel having opposed longitudinal spaced-apart straight edges. An outwardly inclined rectangular side wall panel extends from each of the straight edges to form a substantially V-shaped receiving trough. A brace panel of rectangular shape extends from a straight top edge of each of the side wall panels and extends at an outward angle therefrom to a flat, surface engaging, support foot lying in a substantially common or parallel plane with the support base panel. A composite bottom connecting wall maintains the support base panel, the side wall panels, the brace panels and the support feet in a taco support position.

Various taco shell holders are known for supporting a taco shell with foodstuff therein in an upright position. Examples of these taco shell holder constructions can be found in, for example, U.S. Pat. Nos. 4,872,566, 4,925,032, and 5,005,704. Most taco shell holders are for single use only and provide the function of holding the taco shell upright on a support surface whereby to place foodstuff in the taco shell trough and some of these holders are also used to hold a taco shell to facilitate heating the taco and simultaneously providing a sanitary function.


A read-only memory (ROM) cell has first and second transistors connected in series between a true bit line and a voltage reference (e.g., ground), and third and fourth transistors connected in series between a complement bit line and the voltage reference. The gates of the first and third transistors are connected to a first word line, and the gates of the second and fourth transistors are connected to a second word line. The ROM cell is programmed to store any possible combination of two bits of information by appropriately (i) connecting the node between the first and second transistors to either the true bit line, the complement bit line, or the voltage reference and (ii) connecting the node between the third and fourth transistors to either the true bit line, the complement bit line, or the voltage reference.

1. Field of the Invention
The present invention relates to the storage of data, and, more specifically but not exclusively, to read-only memory (ROM) devices.
2. Description of the Related Art
Read-only memory (ROM) is a type of storage medium used in computers and other electronic devices. In general, data stored in ROM is either unchangeable or requires a special operation to change (unlike random-access memory (RAM), which can be changed as easily as it is read). Conventionally, ROM is configured as an array of memory cells, wherein the memory cells are arranged in rows and columns, and each memory cell stores a single bit of information (i.e., a logic state of "0" or "1").

AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.


A process for creating a copper damascene structure, totally encapsulated with conductive barrier shapes, has been developed. After formation of a copper damascene structure, encased with tantalum or tantalum nitride barrier shapes, coating the bottom and sides of the copper damascene structure, another conductive barrier shape, is formed on the top surface of the copper damascene structure. This conductive barrier shape, located on the top surface of the copper damascene structure, is formed via patterning of a blanket conductive barrier layer, via an anisotropic RIE procedure, using a photoresist shape as an etch mask. The photoresist shape in turn, is formed in negative photoresist layer, using the same photolithographic exposure plate, previously used to define the opening in the insulator layer, in which the copper damascene structure resides. This combination results in a photoresist shape, directly overlying the portion of the conductive barrier layer that directly overlays the copper damascene structure, allowing a conductive barrier shape, to be formed only overlying the top surface of the copper damascene structure.

(1) Field of the Invention
The present invention relates to methods used to fabricate semiconductor devices, and more specifically to a method used to reduce the capacitance of semiconductor devices, comprised with copper interconnect structures.
(2) Description of Prior Art
The use of copper interconnect structures, has resulted in an increase in semiconductor device performance, when compared to counterparts fabricated using less conductive aluminum based, interconnect structures. However the use of dielectric barrier layers, such as a high dielectric constant silicon nitride layer, needed to prevent diffusion of copper, into, or poisoning of, overlying insulator layers, such as silicon oxide, have negated part of the performance increases resulting from the use of conductive copper structures. A blanket layer, of a high dielectric constant barrier layer, such as silicon nitride, is deposited after definition of the copper structure, and only removed from the region of the copper structure, to be used for contact by an overlying conductive structure. The remaining regions of the high dielectric constant silicon nitride layer, result in unwanted capacitances and decreased device performance.
This invention will describe a procedure in which a tantalum, or tantalum nitride, barrier layer, is used to prevent the interaction between the underlying copper interconnect structure, and an overlying insulator layer. However this invention will teach a process in which the barrier layer is patterned to remain only overlying the top surface of the underlying copper structure, removed from all other regions of the semiconductor device. The use of this novel procedure, using a photoresist shape as an etch mask for definition of the barrier layer shape, and where the photoresist shape is formed via exposure of a negative photoresist layer, using the same photomask that was previously used to create the damascene opening, in which the copper structure resides, allows creation of the barrier shape, overlying only the top surface of the copper structure, thus eliminating the need for a silicon nitride barrier layer, and thus resulting in reductions in capacitance, and increases in device performance. Prior art, such as Schacham-Diamand et al, in U.S. Pat. No. 5,824,599, and Bai et al, in U.S. Pat. No. 5,714,418, describe the use of silicon nitride barrier layers, for copper structures, while Chan et al, in U.S. Pat. No. 5.744,376, describes the use of either silicon nitride, aluminum oxide, or tantalum oxide barriers, for copper structures. However none of these prior arts describe the use of a conductive barrier layer, such as tantalum or tantalum nitride, defined overlying only the top surface of the underlying copper structure.
It is an object of this invention to fabricate a barrier layer, to prevent diffusion, or poisoning, from a underlying copper structure, to an overlying insulator layer.
It is another object of this invention to define a barrier layer shape, only on the top surface of the underlying copper structure.
It is still another object of this invention to create a tantalum or tantalum nitride barrier layer shape, only on the top surface of the underlying copper structure, via use of a reactive ion etching procedure, featuring the use a photoresist shape as an etch mask, where the photoresist shape is created using a negative photoresist material, and exposure using the same photomask that was previously used to define the opening, in an insulator layer, used for the damascene copper structure.
In accordance with the present invention a method is described for fabricating a damascene copper structure, featuring a conductive barrier layer, located only on the top surface of the damascene copper structure. An opening is made in a first insulator layer, using a first photomask, and a positive photoresist layer, exposing either a portion of the top surface of an underlying, lower interconnect structure, or a portion of the top surface of an active device region, in a semiconductor substrate, located at the bottom of the opening. After deposition of a first barrier layer, and of a copper layer, completely filling the opening in the first insulator layer, a chemical mechanical polishing, (CMP), procedure, is used to remove the regions of copper, and the regions of the first barrier layer, residing on the top surface of the first insulator layer, creating a damascene copper structure, in the opening in the first insulator layer. A second barrier layer, comprised of either tantalum or tantalum nitride is deposited, then defined overlying only the top surface of copper structure, via use of a reactive ion etching procedure, using a photoresist shape as a mask, where the photoresist mask was formed via exposure of a negative photoresist layer, using the first photomask. A second insulator layer is deposited, followed by the formation of a damascene, or dual damascene opening, in the second insulator layer, exposing a portion of the top surface of the second barrier layer, overlying the damascene copper structure. An upper metal interconnect structure is then formed in the opening in the second insulator layer, overlying, and contacting, a portion of the top surface of the second barrier layer.

Method to reduce capacitance for copper interconnect structures

Taiwan Semiconductor Manufacturing Company


A communication device that controls a transmission bandwidth of TCP communication includes a means for linearly increasing the transmission bandwidth of the TCP communication during a certain period of time after a data segment whose reception has been acknowledged enters an update state without detection of congestion in the TCP communication, a means for non-linearly increasing the transmission bandwidth after the certain period of time, a means for detecting congestion using a change rate of a discarding rate or a retransmission rate in the TCP communication, a means for estimating a retransmission rate and a change rate thereof using a previous history of the transmission bandwidth and a retransmission bandwidth, and a means for estimating a discarding rate and a change rate thereof using a previous history of the transmission bandwidth and an ACK reception number.

It has become common to use a wide area network (WAN) employing an Internet protocol-virtual private network (IP-VPN) technique or the like as a communication network between points used in a cloud or the like.
When a computer such as a terminal located at a certain point performs communication with a terminal located at another point, communication is performed through a line connecting a local area network (LAN) at its own point with a WAN and a line connecting a WAN with a LAN at another point. In the lines, an available bandwidth is limited according to a contract bandwidth.
A transmission control protocol (TCP) is commonly used in communication between terminals. In TCP communication, a receiving terminal gives feedback on a position of data that is transmitted by a transmitting terminal and received thereby to the transmitting terminal. When the fed-back position of the received data does not increase, the transmitting terminal determines that discarding has been detected.
Further, the transmitting terminal manages a parameter called a congestion window size (a transmittable data size even when reception is not notified of by the receiving terminal), and changes the congestion window size according to a round trip time (RTT) or whether discarding is detected.
When discarding is detected or when the RTT increases, a network is determined to be congested, and in this case, by reducing the window size, a transmission bandwidth is indirectly decreased, and thus congestion of the network is avoided. Further, when no discarding is detected or when the RTT decreases, the network is determined to be available, and in this case, by increasing the window size, the transmission bandwidth is indirectly increased, and a line bandwidth of the network is efficiently used.
As the RTT increases or as the discarding rate increases, the window size increases, and the bandwidth decreases.
As described above, in the communication using the TCP in the WAN, the transmission bandwidth significantly depends on the RTT and the discarding rate.
As a method of increasing the window size, there is also a technique of first non-linearly increasing the window size and then linearly increasing the window size after the window size exceeds a certain threshold value (PTL 1).
Meanwhile, PTL 2 discloses that in a communication system using the TCP in the WAN, a device connected to a receiving side terminal includes a means for giving feedback on all discarded segments to a device connected to a transmitting side terminal, and the transmitting side terminal includes a means for retransmitting the fed-back discarded segments and a means for controlling a transmission bandwidth based on a retransmission bandwidth and a discarded bandwidth.


A positive resist composition having excellent mask linearity is provided. This composition is a positive resist composition comprising a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin and the acid generator component (B) contains an onium salt-based acid generator (B1) containing a perfluoroalkyl sulfonate ion having 3 or 4 carbon atoms as an anion.

1. Field of the Invention
The present invention relates to a positive resist composition.
This application claims priority on Japanese Patent Application No. 2004-98183 filed in Japan, on Mar. 30, 2004, the disclosure of which is incorporated by reference herein.
2. Description of the Related Art
In the production of semiconductor devices and liquid crystal display devices, fine working has rapidly been developed, recently, with the progress of a lithography technique. A light source having a shorter wavelength is generally employed for fine working. Specifically, ultraviolet rays typified by g-rays and i-rays have conventionally been used, but now KrF excimer lasers (248 nm) and ArF excimer lasers (193 nm) have been introduced.
As one of the resist materials which satisfy the conditions of high definition capable of reproducing a pattern having a fine size, for example, there is known a chemically amplified resist composition comprising a base resin and an acid generator generating an acid under exposure, wherein alkali solubility changes due to an action of an acid generated from the acid generator.
As the base resin component of the chemically amplified resist, for example, there can be used polyhydroxystyrene having high transparency to a KrF excimer laser (248 nm), or those wherein a portion of hydroxyl groups are protected with an acid dissociable dissolution inhibiting group.
As the acid generator, for example, onium salt-based acid generators are now used most popularly. Among these acid generators, an onium salt-based acid generator wherein the anion moiety (acid) is a fluoroalkyl sulfonate ion containing an alkyl chain having 1 carbon atom (hereinafter referred to as "C1PAG") is mainly used and the other acid is not used popularly because of its low acid strength (see, for example, Patent Document 1).
[Patent Document 1] Japanese Patent Application, First Publication No. 2001-51422
However, a resist composition containing C1PAG has the problem that it is inferior in mask linearity (reproducibility of the mask). Therefore, when an Iso line pattern and a line-and-space (L&S) pattern are formed by using a mask having the same line width, the Iso line pattern has a line width smaller than that of the L&S pattern, thus causing a problem such as poor Iso/Dense balance wherein the (Iso) pattern and the (Dense) pattern differ in reproducibility of the mask.


The present invention provides cholinesterase inhibitors of general formula (I): ##STR1## wherein R is H or (C.sub.1 -C.sub.4)alkyl, Y is a linking group and Z is an aryl group, and the pharmaceutically acceptable salts thereof.

Alzheimer's Disease is a devastating neurodegenerative disorder which is characterized by dramatic personality changes and global cognitive decline. It currently affects approximately four million Americans, taking more than 100,000 lives each year. See, R. Tanzi et al., Genetica, 91, 255 (1993). As described by D. J. Selkoe, Neuron, 6, 487 (1991) and Z. S. Khachaturian, Arch. Neurol., 42, 1097 (1989), this disease is pathologically characterized by the degeneration of the basal forebrain cholinergic system and the deposit of amyloid plaques in the brain.
One approach to treating this disease is to restore the level of neurotransmitter acetylcholine, which is found to be lowered in brains of the Alzheimer's patients, by inhibiting acetylcholinesterase (AChE) with reversible inhibitors. One class of AChE inhibitors includes huperzine A and analogs thereof. See, for example, Kozikowski (U.S. Pat. No. 5,104,880). Another such AChE inhibitor 9-amino-1,2,3,4-tetrahydroacridine (THA, also known as tacrine or COGNEX) is currently a drug approved by the United States Food and Drug Administration for the palliative treatment of mild and moderate Alzheimer's Disease. See, K. L. Davis et al., Lancet, 345, 625 (1995). The structure of THA is depicted below. ##STR2## However, the use of THA is currently limited by its serious hepatoxicity. Therefore, there is a continuing need for AChE inhibitors which may be useful to treat Alzheimer's Disease, including analogs of THA exhibiting improved profiles of bioactivity, such as higher potency, and a lower incidence or intensity of side effects.

THA analogs useful as cholinesterase inhibitors

Mayo Foundation For Medical Education and Research


Novel siloxane compounds having a fluorinated group, an SiH group reactive with silicone resins, and an epoxy-bearing organic group attached to a silicon atom, each in a backbone, are effective for providing adhesion and are useful tackifiers for various resins.

1. Field of the Invention
This invention relates to novel siloxane compounds effective for imparting adhesion to silicone resins or the like and thus bonding silicone resins or the like to various members. More particularly, it relates to siloxane compounds having a fluorinated group in a backbone and effective for imparting adhesion to fluorinated silicone resins and rubbers.
2. Prior Art
Several siloxane compounds are known to impart adhesion to silicone resins. For example, Japanese Patent Application Kokai Nos. 47605/1987, 47608/1987 and 49305/1987 discloses hydrogensiloxanes having a perfluoropolyether or perfluoroalkylene group in a backbone and containing at least two SiH groups in a molecule. These hydrogensiloxanes are represented by the following formula (5): ##STR1## wherein R.sup.f is a perfluoropolyether or perfluoroalkylene group and k is equal to 1, 2 or 3.
These siloxane compounds, however, could not impart satisfactory adhesion to fluorinated silicone resins. It is thus desired to have a siloxane compound capable of imparting satisfactory adhesion to fluorinated silicone resins.


A preformed or preassembled bowl/plate assembly, including a bowl, a plate secured with respect to the bowl and defining with the bowl a chamber, the plate having a number of openings, each configured to receive a chandelier arm in a predetermined array. The chamber houses a plurality of wires with one pair of wires extending through each of the openings in the plate from the chamber. A plate/arm arrangement is provided to permit attachment of chandelier arms to the plate while only having access to the upwardly-facing surface of the plate. The chandelier arms may be both structurally attached to the chandelier framework and electrically attached to the central wiring of the chandelier after preassembly of the bowl/plate arrangement. The chandelier arms are preferably formed in an arcuate shape with a light socket attached to a first end and a sleeve attached to a second end and a pair of wires electrically attached to the light socket. The wires extend from the light socket through the chandelier arm to the second end and attached to a corresponding pair of wires extending from the openings in the plate to form a plurality of wire attachments. Peripherally, each pair of wires extending from the plate openings terminate in a plug positioned outside of the chamber and each pair of wires extending from each chandelier arm terminates in another plug which is configured to meet with the plug emanating from the plate opening.

Chandeliers come in a variety of forms and are made of a variety of materials. For example, certain chandeliers are made almost entirely of metal whereas other chandeliers are made almost entirely of glass. Chandeliers made primarily of glass present special problems with respect to shipping, particularly if the chandelier includes delicate, arcuate shaped glass arms. An example of such a chandelier is shown in FIG. 1.
The chandelier 10 includes a number of primary components. Its principal framework is a central stem 12 formed of a central metal support rod obscured from view by a series of dishes or bowls 14 and urns 16 stacked vertically upon one another. Crystals 18 are hung from these bowls to further adorn the chandelier. In addition, the chandelier is provided with a plurality of delicate, arcuate glass arms 20, some of which terminate in a light bulb 21. These delicate glass arms 20 are attached typically to a metal plate (not visible) secured to the central metal support rod and obscured from view by being seated within one of the bowls 14. The glass arms 20 thus provide a mechanism for lighting the chandelier and also provide points of attachment for crystals 18 and chains of crystals, which points of attachment are somewhat remote from the central stem, thereby allowing for draping of crystal chains and so forth to provide desirable appearances.
FIG. 2 is a representative partial cross-section of a chandelier of the type described in FIG. 1. The central support rod 22 extends vertically through the chandelier and terminates at its upper end in a ring 24 attached to support rod upper threads 26, to permit the chandelier to be hung from a ceiling. The bottom end of the support rod 22 has support rod lower threads 26'. These lower threads 26' are adapted to receive a pair of threaded nuts 28 which sandwich and hold in place a metal plate 30. The bowls 14', 14" and urns 16 are stacked upon the metal plate 30, with the support rod 22 passing centrally therethrough. The upper most bowl 14' is fixed from detachment from the support rod 22 by a washer 32 held in place by a threaded nut 34 secured to the ring 24 and screwed onto the upper threads 26 of the support rod 22. The bowl 14" is secured to a threaded stem 36 extending from the bottom end of the support rod 22 by a bottom bowl washer 38 and threaded nut 40. The plate 30 is seated within the bowl 14" when the bowl is attached to the threaded stem 36. The plate 30 and metal bowl 31 when assembled define a cavity containing the wiring. This cavity or chamber then is received within the bowl 14" which obscures from view the threaded stem and all of the wiring (not shown) that is connected to the lighted glass arms 20'.
The lighted glass arm 20' is connected to the plate 30 in a conventional manner. Each lighted glass arm 20' is seated in a cup or sleeve 42. Extending from the bottom of the sleeve 42 and threaded through the bottom of the sleeve 42 is a threaded stem 44. (To manufacture the arm, the threaded stem is threaded into the sleeve and the arm is then seated in the sleeve and cemented thereto.) The threaded stem 44 is inserted through a radially disposed opening 46 in the plate 30, with the bottom of the sleeve 42 abutting the upwardly facing surface of the plate 30. A washer 48 and threaded nut 50 are passed over the positive wire 52, negative wire 54 and ground wire 56 extending from the threaded stem 44 and the threaded nut 50 is threaded onto the threaded stem 36, thereby securing the lighted glass arm 20' to the plate 30. The wires 52, 54, 56 then are connected to central wiring passing through the central stem to provide an electrical communication between the light socket 58 and an electrical energy source to which the chandelier is connected.
The wiring is shown in greater detail in FIG. 3. The wires 52, 54, 56 extend from the light socket through lighted glass arm 20', through the radial opening 46 and the plate 30 and out of the threaded stem 44 attached to the lighted glass arm 20'. A positive wire 52 from each of the lighted glass arms 20' (two arms shown) and a positive wire 52' from the wiring extending from the central stem 12 are electrically connected using a first wire nut 60. Likewise, a negative wire 54 from each of the lighted glass arms 20' and a negative wire 54' from the wiring of the central stem are connected to one another by a second wire nut 60. The ground wires (not shown) are secured in the same manner. While only two glass arms are shown in FIG. 3, two glass arms are not typical. Instead, chandeliers more frequently have 5, 10, 20 or even more lighted glass arms attached to a plate. Referring to FIG. 4, approximately 20 lighted glass arms (not shown) are attached to the plate 30. The wiring for 12 of these glass arms is shown. As can be seen, the wiring is complex. It is not permitted to attach more than a certain number of wires through a single wire nut 60'. Therefore the positive wires 52 from some lighted glass arms are connected to one wire nut 60' whereas the positive wires 52 from other glass arms are connected to a different wire nut 60', which in turn is connected sometimes via auxillary wire nuts to the central wiring. Only after all of the wiring has been completed can the bottom bowl 14" and metal bowl 31 be attached to the plate 30 to form a bowl/plate assembly defining a chamber which contains and obscures from view the wiring.
It should be readily understood that the foregoing process for assembling a chandelier imposes a serious burden upon the distributor or ultimate customer. As discussed above, the glass arms 20 are too delicate to preassemble onto the chandelier 10, and, therefore, must be packed and shipped separately. Because access to both sides of the plate 30 are required to mount the glass arms 20 onto the metal plate 30, the bottom bowl 14" and metal bowl 31 cannot be assembled and attached to the metal plate 30 until after assembling the glass arms onto the plate, because doing so would prevent the necessary access to the bottom side of the plate for attachment of the glass arms 20 to the plate 30. Likewise, because the glass arms 20 are packed separately, the chandelier cannot be prewired for easy assembly.
Disassembly can be as substantial a problem as assembly, should part of the wiring fail or should any one of the arms be damaged. In order to repair a glass arm, or even test the wiring in a glass arm, the bottom bowl 14" and metal bowl 31 must be disassembled from the bowl/plate assembly to expose the wires so that the wires from the damaged or failing arm can be physically detached from the other wires and also so as to provide access to the nut abutting the bottom surface of the plate and holding the glass arm to the plate.
It thus would be desirable to have a chandelier assembly that is easier to put together and take apart, but that still permits shipping of arms, and in particular glass arms, separately packaged.

Chandlier assembly and chandelier components for glass arm configurations