In bit line cladding structure formation, stability and margin of the process are secured and further shrinking is achieved, and the magnetic memory device is improved in speed, reliability and yield. Method for manufacturing a magnetic memory device, comprising the steps of: forming a word line; forming a magnetoresistance effect memory element comprising a tunnel insulating layer disposed between a ferromagnetic material and being electrically insulated from the word line; forming an insulating film for covering the memory element; and forming a bit line so that it is buried in the insulating film wherein the bit line is electrically connected to the memory element and spatially crosses the word line through the memory element disposed therebetween, wherein the method has steps of removing the insulating film on the bit line side to expose the bit line and forming a soft magnetic material layer selectively only on the bit line surface.

1. Field of the Invention
The present invention relates to a method for manufacturing a magnetic memory device and a magnetic memory device. More particularly, the present invention is concerned with a method for manufacturing a nonvolatile magnetic memory device and a magnetic memory device which stores information by utilizing a change of the resistance value caused by changing of the spin direction of a ferromagnetic material to be parallel or non-parallel.
2. Description of Related Art
As information communication devices, especially small devices for personal use, such as mobile terminals, are rapidly spreading, there are demands for devices constituting such electronic devices, such as a memory element and a logic element, which have higher performance, for example, higher degree of integration, higher speed, and lower power consumption. Particularly, a nonvolatile memory is considered indispensable in the ubiquitous era.
For example, even when consumption of power supply or trouble thereof occurs, or disconnection of a server and a network occurs due to certain interference, a nonvolatile memory can protect important personal information. In addition, the increase of the density and capacity of the nonvolatile memory is more important as a technique of substitute for a hard disk or an optical disk which fundamentally cannot be miniaturized due to the presence of moving parts.
Recently available portable devices are designed so that a non-operating circuit block is maintained in a standby state to reduce the power consumption to a possible lowest level, and the waste of power consumption and memory can be avoided if a nonvolatile memory capable of serving as both a high speed network memory and a large storage capacity memory can be realized. Further, when the high-speed large-capacity nonvolatile memory can be realized, a function such that a device works the instance it is turned on, i.e., so-called "instant-on" function may be possible.
Examples of nonvolatile memories include a flash memory using a semiconductor and a ferroelectric random access memory (FERAM) using a ferroelectric material. However, the flash memory has a disadvantage in that the write speed is as low as the order of microsecond. In addition, the flash memory has also disadvantages in that the structure is complicated and hence the increase of the degree of integration is difficult, and that the access time is as slow as about 100 ns. On the other hand, with respect to the FRAM, the endurance is 1012 to 1014, and a problem has been pointed out such that the endurance is not sufficient to completely replace the existing memory by a static random access memory or a dynamic random access memory. Further, another problem that micro-fabrication of a ferroelectric capacitor is difficult is also pointed out.
As a nonvolatile memory free of the above problems, a magnetic memory called magnetic random access memory (MRAM) or magnetoresistance (MR) memory is in the limelight and, recently, tunnel magnetoresistance (hereinafter, frequently referred to simply as "TMRI") effect element materials are being improved in properties and hence the magnetic memory has attracted greater attention (see, for example, Non-patent document 1). In addition, the MRAM has a memory element formed in a wiring portion, and therefore is advantageous in that the degree of freedom for mounting of the memory portion is high, integration is easy, mounting in combination with a logic circuit is easy, the MRAM has compatibility with a complementary metal oxide semiconductor (CMOS) process, and the like.
The MRAM has a simple structure and is easy to increase the degree of integration, and stores data by utilizing rotation of a magnetic moment and therefore is expected to have higher endurance. In addition, it is expected that the access time of MRAM is very fast, and it has already been reported that the MRAM can be operated at 100 MHz (see, for example, Non-patent document 2). Further, the MRAM has been remarkably improved since a higher power can be currently obtained due to a giant magnetoresistance (GMR) effect.
Differing from a conventional memory function utilizing electrons (electricity), the MRAM is a device using as a memory medium a change of the magnetoresistance caused by changing of the direction of magnetization, which needs to operate the response of changing of the direction of magnetization at a speed equivalent to the speed of the response of the conduction of electrons. The direction of magnetization of the MRAM changes depending on the current which flows a metal wiring. That is, a current flows a wiring to generate a magnetic field in the center of the wiring. An MRAM element {TMR or magnetic tunnel junction (MTJ)} detects the magnetic field generated, so that the magnetic material in the MRAM element is magnetized in the direction linked to the direction of the magnetic field generated in the wiring. The magnetic material magnetized causes a magnetoresistance, and the magnetoresistance is read as a change of voltage or current. It is important that the magnetic field generated is efficiently introduced to the MRAM element, and this efficiency is considered to determine the operation speed and sensitivity-of the MRAM element. Factors for efficiently introducing the magnetic field to the MRAM element include: (I) generation of an intense magnetic field; (II) suppression of leakage of the magnetic field; (III) arrangement of the MRAM element in the intense magnetic field portion; (IV) high sensitivity of the MRAM element, and the like.
With respect to the factor (I), the intensity of a magnetic field depends on the current density, and, as the current density of a wiring increases, the intensity of the magnetic field increases. The increase of the current density promotes electromigration of the wiring, and hence an aluminum wiring is not used but a copper wiring is used to improve the intensity of the magnetic field. With respect to the factor (III), the problem is solved by arranging a wiring and the MRAM element so that they are close to each other. With respect to the factor (IV), the problem is solved by improving the material for and method for forming the MRAM element.
With respect to the factor (II), a detailed explanation is made. Storage in the MRAM is made by rotating the magnetization of the memory layer utilizing a current magnetic field generated by allowing a current to flow a wiring. However, as the wiring becomes thinner due to an increase of the degree of integration, the critical value of a current which can flow the writing line is lowered, so that only a weak magnetic field can be obtained, thus inevitably reducing the coercive force of a region in which data is stored. This means that the reliability of the information memory device is lowered. In addition, unlike a light or an electron beam, a magnetic field cannot be focused and this is considered to be the biggest cause of cross talk when the degree of integration is increased. For preventing this, a keeper structure and the like have been proposed, but they inevitably cause the structure to be complicated. As described above, writing using a current magnetic field has a number of fundamental problems to be solved, and the writing using a current magnetic field may be a great defect of the future MRAM.
With respect to the factor (II), an attempt is made to solve the problem by a method using a cladding structure in which a wiring portion is covered with a soft magnetic material. It is noted that the wiring is not completely covered, and the soft magnetic material is not formed on the surface on the side of the MRAM element since a magnetic field must be supplied to the MRAM element from the plane of the wiring facing the MRAM element. Specifically, a word line is generally provided under the MRAM element, and hence no soft magnetic material is formed on the word line. A bit line is provided on the MRAM element, and hence no soft magnetic material is formed under the bit line (see, for example, Non-patent document 1).
With respect to the formation of a cladding structure, several methods have been proposed, and the most general method is described below. This is a method for forming a cladding structure for word line.
The following procedure is not shown in the figure. (a): On the inner wall of a wiring trench formed in an insulating film, in which a word line is formed, a barrier metal layer, a soft magnetic material layer, and a copper seed layer are deposited by, for example, sputtering. (b): The wiring trench is filled with a wiring material by a plating process, a chemical vapor deposition process or the like. (c): The excess wiring material formed on the insulating film is removed by chemical mechanical polishing so that the wiring material remains only in the wiring trench and the surface of the insulating film is planarized, thereby forming a word line comprised of the wiring material remaining in the wiring trench.
On the other hand, the method for forming a cladding structure for bit line is complicated. One example of the method is described with reference to the diagrammatic cross-sectional views of FIGS. 9A to 9J. As shown in FIG. 9A, an element for selection (not shown), a sense line (not shown), and the like are formed on a substrate (not shown), and a first insulating film 41 is formed so as to cover them. On the first insulating film 41 is formed a second insulating film 42 in which a word line and the like are formed, and in the second insulating film 42 are formed a word line 11 having a trench wiring structure, an electrode (not shown) connected to the element for selection (not shown), and the like. On the second insulating film 42, a memory element 13 is formed above the word line 11 through a third insulating film 43 for covering the word line 11 and the electrode. The memory element 13 is comprised of, for example, a TMR element. Under the memory element 13, a by-pass line 17 comprised of an antiferromagnetic layer, a conductive layer or the like is formed and connected to the electrode. On the third insulating film 43, a forth insulating film 44 is formed so as to cover the memory element 13, and then the forth insulating film 44 is subjected to planarization so that the upper surface of the memory element 13 is exposed. Then, on the forth insulating film 44, a fifth insulating film 45 for covering the memory element 13, in which a bit line is formed, is deposited, and then a wiring trench 46 in which a bit line is formed is formed so that the upper surface of the memory element 13 is exposed to the bottom of the wiring trench and a contact hole (not shown) to the word line 11 is formed.
Then, as shown in FIG. 9B, a barrier metal layer 121 and a soft magnetic material layer 122 are successively deposited on the wiring trench 46 and the contact hole. The barrier metal layer 121 is deposited by a sputtering process, a chemical vapor deposition (hereinafter, frequently referred to simply as "CVD") process, an atomic layer deposition (ALD) process or the like, and the deposition method is selected depending on the form and size of the wiring trench in which the barrier metal layer 121 is formed. In the barrier metal layer 121, tantalum (Ta), tantalum nitride (TaN), titanium (Ti), titanium nitride (TiN), tungsten nitride (WN), zirconium nitride (ZnN), or the like may be used, and the thickness of the layer is advantageously in the range of from 5 to 50 nm. The soft magnetic material layer 122 is deposited by a sputtering process or the like. The thickness of the soft magnetic material layer 122 is required to be adjusted by changing the amount of the below-described etchback. Specifically, the etchback must meet both the requirement that the soft magnetic material layer 122 on the bottom of the wiring trench 46 be completely removed and the requirement that the soft magnetic material layer 122 remaining on the sidewall of the wiring trench 46 have a thickness sufficient to exhibit a magnetic flux focusing effect. This is affected by not only the thickness of the soft magnetic material layer 122 but also the coverage of the deposition method. For example, in a sputtering process, the side coverage is several tens % at most and the bottom coverage is several tens %. The side coverage is poor, and therefore it is required to deposit a film having a large thickness to a certain extent.
Then, as shown in FIG. 9C, the soft magnetic material layer deposited on the bottom of the wiring trench is removed (generally employing etchback by dry etching). In this step, it is important that the soft magnetic material layer 122 on the bottom of the wiring trench 46 is completely removed and that the soft magnetic material layer 122 remains on the sidewall of the wiring trench so that the thickness is sufficient to exhibit a magnetic flux focusing effect. This step generally employs anisotropic etching, and etching having high degree of anisotropy is desired since the soft magnetic material layer 122 must remain on the sidewall of the wiring trench 46, and a plasma etching technique which generates high-density etching species, such as inductively coupled plasma (ICP) or electron cyclotron resonance (ECR), is used.
Then, as shown in FIG. 9D, a barrier metal layer 123 is formed on the inner walls of the wiring trench 46 and the contact hole, and then a copper seed layer 124 is deposited thereon. The copper seed layer 124 is deposited using, for example, a sputtering process or a CVD process. The deposition method and the thickness of the layer are appropriately selected depending on the form and size of the wiring trench 46 in which a bit line is formed and the contact hole.
Further, as shown in FIG. 9E, the wiring trench 46 and the contact hole are filled with a wiring material 125 by, for example, an electro-chemical deposition (ECD) process or a CVD process.
Then, as shown in FIG. 9F, the excess wiring material 125 (including the copper seed layer 124) and barrier metal layers 123, 121 {see FIGS. 9B and 9D} on the fifth insulating film 45 are removed by chemical mechanical polishing so that the wiring material 125 remains in the wiring trench 46 and the contact hole, thereby forming a bit line 12 so that the wiring material 125, the barrier metal layers 123, 121, and the soft magnetic material layer 122 remain in the wiring trench 46 and the contact hole and planarizing the surface.
Then, as shown in FIG. 9G, on the fifth insulating film 45, a soft magnetic material layer 126 for covering the bit line 12 is deposited. The deposition of the soft magnetic material layer 126 is similar to the method described above. The material for the soft magnetic material layer 126 may contain atoms which diffuse into the device, and, in such a case, it is preferred to form a barrier metal layer under the soft magnetic material layer 126.
Then, as shown in FIG. 9H, a resist mask 51 for covering the bit line 12 and forming a magnetic material layer pattern is formed on the bit line 12 by resist application and a lithography technique. The resist mask 51 is required to completely cover the bit line 12. The reason for this is that magnetic flux leakage is caused from the portion in which the soft magnetic material layer 126 is not formed and the occurrence of magnetic flux leakage is concentrated in the magnetic flux leakage portion. The resist mask at an inappropriate position due to misalignment causes magnetic flux leakage, and therefore there is need to provide a margin in the reticle mask so that the soft magnetic material layer 126 covers the bit line 12 even when misalignment occurs.
Then, as shown in FIG. 9I, the soft magnetic material layer 126 is processed by dry etching using the resist mask 51, and then the resist film used as the resist mask 51 is peeled off, followed by cleaning, thereby forming the soft magnetic material layers 122, 126 covering the side and upper portions of the bit line 12 as shown in FIG. 9J.
In the etching for the soft magnetic material layer 126 using the resist mask 51, the resist mask 51 may have a problem of durability. In such a case, a hard mask comprised of a silicon oxide film or a silicon nitride film is used. For example, a process is employed in which the soft magnetic material layer 126 is deposited, and then a silicon oxide film or a silicon nitride film is deposited as a hard mask, and the hard mask is processed using the resist mask and the resist is peeled off, followed by etching for the soft magnetic material.
As described above, the formation of a cladding structure for word line can be practiced by a simple process and has no problem.
[Patent Document 1]
Unexamined Japanese Patent Application Laid-Open Specification No. 2002-246566 (FIG. 6 appearing at page 4)
[Non-patent Document 1]
Wang et al., IEEE Trans. Magn. 33 (1997), p. 4,498–4,512
[Non-patent Document 2]
R. Scheuerlein et al., ISSCC Digest of Papers (February 2000), p. 128–129
However, the formation of a cladding structure for bit line has several problems to be solved. The problems are listed below. A process having the number of steps as large as eight is needed. In the removal of the soft magnetic material on the bottom of the wiring trench by an etchback process using dry etching while allowing the soft magnetic material to remain on the sidewall of the wiring trench, there are problems of stability and margin of the process. For forming the soft magnetic material layer on a wiring, the soft magnetic material layer is deposited directly on an interlayer dielectric, and therefore there occurs a problem in that the interlayer dielectric suffers contamination. When employing a soft magnetic material/barrier metal structure for preventing contamination, a burden of dry etching and deterioration of flatness of the bit line are considered. For shielding a magnetic field, the bit line is required to be completely covered with the soft magnetic material. For this reason, a mask having alignment tolerance for the lithography step is needed. In other words, this process is disadvantageous for shrinking. Thus, the formation of a cladding structure for bit line has serious problems to be solved.


A target receptacle, for use in practicing baseball, softball, and the like, having a main part and a base plate. The base plate is secured to a ground surface. The main part is rotatably mounted to the base, has an intake opening, and exit port, and a fully enclosed conduit connecting the intake opening and exit port. When a ball is thrown into the intake opening, it travels through the conduit and exits through the exit port.

The invention relates to a target receptacle for catching balls and safely returning it to the thrower. More particularly, the invention relates to a device that is utilized during the practice of baseball, softball, or the like, and acts as a target to catch balls thrown thereat so as to provide immediate feedback regarding the accuracy of the throw.
Becoming an accomplished baseball or softball player requires that a player develop and master a variety of skills. Among these skills are catching, fielding, base running, sliding, batting, and of course: throwing.
Accurately throwing the ball is among the most critical skills to master for a variety of reasons. When fielding a ball hit by an opposing batter, or even when relaying a ball thrown by another player, the accuracy of the throw helps determine the success of the play being attempted. In addition, when pitching, the speed, accuracy, and manner that the ball is thrown will together determine whether the batter can hit the pitch, or if a ball or strike is called by the umpire.
While many other skills can be practiced alone, it is difficult to properly practice throwing—while ascertaining accuracy—without another player. Truly, a major obstacle to developing pitching techniques is that you need a catcher willing to spend the hours necessary for practice and development of the skills required to be a successful pitcher in softball games. Most successful pitchers have had a friend or relation that was willing to sacrifice the time necessary to aid the pitcher in developing his/her skills. Conversely, without such help, the prospect of becoming a skilled pitcher is severely hampered.
Part of the skill of the pitcher to be developed is to throw the ball within the "strike zone" of the batter. The strike zone is commonly defined as that area above home plate, within the lateral edge boundaries of home plate, and generally between the knee area and arm-pit area of the batter. Skilled pitchers can direct the pitched ball within (or sometimes, when chosen strategically, outside of) the strike zone.
In addition, even when the pitcher has developed a satisfactory technique, the most common way of determining whether the pitcher is throwing accurately is by personal observation. It should be quite clear that mere personal observation oftens leaves significant doubt about whether a pitch is accurately thrown. In consideration of this point, one need only consider the frequency of disputes of the accuracy of calls made by even the most seasoned umpires while observing from an optimum position behind home plate.
U.S. Pat. No. 5,271,616 to Grimaldi discloses a pitching target apparatus that includes a pitching target suspended within a retaining chamber and a floor panel, which slopes toward one side to allow gravity to expel the ball.
U.S. Pat. No. 5,573,239 to Ryker et al. discloses a device to catch, determine accuracy and throw back a ball. Unfortunately Ryker employs considerable complexity and many moving parts and thus presents significant impracticalities.
U.S. Pat. No. 6,155,936 to Dorr discloses a baseball pitcher's practice target with ball return. Dorr, once again, requires a motorized mechanism to return the balls to the pitcher, and thus requires connection to a power source.
U.S. Pat. No. 6,379,272 to Gorgo et al. discloses a backstop and sports ball return assembly. Gorgo employs nets, a collection well, and a chute, and is extremely large, making it impractical for use during baseball or softball practice.
U.S. Pat. No. 6,620,064 to Nickerson discloses a return net device, purportedly for receiving, arresting, and returning a ball to a central collection point for pitched, thrown or batted balls in a ball practice system.
U.S. Pat. No. 7,066,845 to Joseph discloses a baseball training system and method. Joseph collects balls thrown within its nets, and throws them back using a motorized pitching machine.
U.S. Pat. No. 7,137,910 to Ktson discloses a rotating wheel return mechanism. Ktson catches balls within a pan below a backstop, and then returns them using a rotatable wheel that is affixed to a spindle and driven by a motor.
While these units may be suitable for the particular purpose employed, or for general use, they would not be as suitable for the purposes of the present invention as disclosed hereafter.


A method for producing a semiconductor element comprises the steps of: forming a plurality of grooves on a first surface of a semiconductor multi-layer structure along a first direction: forming a plurality of multi-element bars by cleaving the semiconductor multi-layer structure along a second direction; placing at least one of the plurality of multi-element bars on a support stage; and cleaving the at least one of the plurality of multi-element bars along the plurality of grooves by moving a pressure member in a longitudinal direction of the at least one of the plurality of multi-element bars while a constant load is applied by the pressure member to a second surface of the at least one of the plurality of multi-element bars, the second surface being opposite a third surface corresponding to the first surface of the at least one of the plurality of multi-element bars.

1. Field of the Invention
The present invention relates to a method for producing a semiconductor element and a cleavage apparatus for use in the method.
2. Description of the Related Art
A conventional method for producing a semiconductor element (e.g., a semiconductor laser element) will be described with reference to FIGS. 5A through 5C. Initially, a semiconductor multi-layer structure 11 is provided as a semiconductor wafer 1 by successively laminating a plurality of semiconductor layers including an active layer. A plurality of grooves 15 to be used for cleavage (hereinafter referred to as cleavage grooves) are provided on the front surface of the semiconductor multi-layer structure 11 along a longitudinal direction of the cavity of a semiconductor laser element (direction X in FIG. 5A). The grooves 15 are evenly spaced and parallel to each other. The active layer is provided about 4 xcexcm below the front surface of the semiconductor multi-layer structure 11.
Thereafter, a stripe-patterned electrode 13 is provided on the entire front surface of the semiconductor multi-layer structure 11 excluding the cleavage grooves 15. A back electrode 12 is provided on the entire back surface of the semiconductor multi-layer structure 11. The wafer 1 is cut into rectangles. A plurality of short scratches are provided at an edge of the rectangular semiconductor multi-layer structure 11 along the longitudinal direction of the cavity of a semiconductor laser element (direction X). The scratches are evenly spaced as shown in FIG. 5A.
Thereafter, the integral of the semiconductor multi-layer structure 11, the patterned electrode 13, and the back electrode 12 is cleaved (first cleavage) in a direction perpendicular to the cleavage grooves 15 provided between the stripes of the patterned electrode 13, using the scratches 14 as starting points of cleavage. Thereby, a plurality of multi-element bars 16 are obtained. The multi-element bar 16 has the back electrode 12a on the entire back surface of he bar-shaped semiconductor multi-layer structure 11 and plurality of patterned electrodes 13 separated by the cleavage grooves 15 on the front surface of the bar-shaped semiconductor multi-layer structure 11 as shown in FIG. 5B.
Thereafter, referring to FIG. 5C, each multi-element bar 16 is cleaved (second cleavage) along the cleavage grooves 15, resulting in a plurality of semiconductor laser elements 17. Each semiconductor laser element 17 has the patterned electrode 13 on the front surface of the semiconductor multi-layer structure 11 and the back electrode 12a on the back surface of the semiconductor multi-layer structure 11. When a voltage is applied between the patterned electrode 13 and the back electrode 12a, laser light is emitted from a facet produced by the first cleavage.
The cleavage grooves 15 are, for example, scratches (grooves) formed mechanically by a diamond needle of a scriber or the like. In this case, there is a micro crack extending from the cleavage groove 15 inward the semiconductor multi-layer structure 11. The micro crack reduces the strength of crystal. Therefore, when a load is applied from the back electrode 12a side to the cleavage groove 15 provided on the multi-element bar 16, the multi-element bar 16 is easily cleaved along the micro crack having a lesser crystal strength. In order to conduct the second cleavage to the multi-element bar 16 on which the cleavage grooves 15 (scratches) are provided, a relatively small load is applied to the back electrode 12a in a longitudinal direction of the multi-element bar 16. For example, a load is applied to the back electrode 12a by a roller being rotated and moved on the back electrode 12a.
Japanese Laid-Open Publication No. 6-338662 discloses a method for forming scratches (grooves) as the cleavage grooves 15 on a semiconductor wafer in which semiconductor laser elements are provided. When the cleavage grooves 15 are formed mechanically used a scriber or the like, a plurality of cleavage grooves 15 need to be reliably provided from one edge to the other edge of the patterned electrode 13. Such a process reduces working efficiency.
Further, the semiconductor wafer 1 is easily broken along the scratches which is being formed on the semiconductor wafer 1. Breaks also easily occur along the scratches during the first cleavage in a direction perpendicular to the scratches. As a result, a yield of the semiconductor laser elements is lowered.
To address the above-described problems, the cleavage grooves 15 may be provided by etching. In this case, the front surface of the semiconductor wafer is first coated with a resist film, excluding portions thereof in which the cleavage grooves 15 will be provided. Such portions which has not been covered with the resist film are etched, resulting in the cleavage grooves 15 having a V-shaped cross-section as shown in FIG. 7. In such a process, all the cleavage grooves 15 are formed at once. Therefore, the working efficiency of production of the cleavage grooves 15 is improved as compared with when the cleavage grooves 15 are formed mechanically using a scriber or the like as described above.
Japanese Laid-Open Publication No. 62-137894 discloses a cleavage apparatus 2 shown in FIG. 6. In the cleavage apparatus 2, etched grooves are provided as the cleavage grooves 15 on the multi-element bar 16. The multi-element bar 16 is placed on a film 31, and a sheet 34 is provided on the multi-element bar 16. Further, the sheet 34 is covered with a film 32. Thereafter, a load is applied via the film 31 to the multi-element bar 16 using a roller 33 so that the multi-element bar 16 is cleaved.
As described above, when the cleavage grooves 15 (etched grooves) are formed by etching, substantially no micro crack is generated inside the semiconductor multi-layer structure 11 unlike the scratches mechanically provided using a diamond needle or the like. Therefore, portions having low strength are not clearly provided inside the semiconductor multi-layer structure 11. Therefore, when the multi-element bar 16 is subjected to the second cleavage, a greater load is required as compared with when the multi-element bar 16 has the cleavage grooves 15 mechanically formed. In this case, the multi-element bar 16 cannot be reliably cleaved (second cleavage) when a load applied by the roller 33 is relatively low.
In particular, in the apparatus 2, the multi-element bar 16 is sandwiched by a pair of the films 31 and 32, and is further held by a ring, thereby providing tension for the film 31. A load is applied to the multi-element bar 16 using the roller 33. Therefore, when the tension of the film 31 is changed, the load applied to the multi-element bar 16 is likely to be changed. Moreover, the film 31 or the multi-element bar 16 may be displaced due to the pressure caused by the roller 33. The above-described reasons makes it difficult to apply a constant load to the multi-element bar 16. It is also difficult to rotate the roller 33 smoothly while applying a constant load to the multi-element bar 16 sandwiched by a pair of the films 31 and 32.
As described above, it is difficult to cleave the multi-element bar 16 sandwiched by a pair of the films 31 and 32 by applying a constant load to the multi-element bar 16.
Japanese Laid-Open Publication No. 54-93356 discloses a cleavage method in which the cleavage grooves 15 having a V-shaped cross-section is formed by etching, and the insides of the cleavage grooves 15 are subjected to rough surface treatment, thereby providing micro cracks inside the semiconductor multi-layer structure 11; and thereafter, by rotating a roller, a load is applied to a surface (back surface) of the multi-element bar 16 opposite the surface on which the cleavage groove 15 are provided so that the multi-element bar 16 is cleaved (second cleavage). In such a method, the strength of the cleavage grooves 15 can be clearly distinguished from the strength of portions in which the cleavage grooves 15 are not provided. Therefore, a small load applied to the back surface causes the second cleavage in the multi-element bar 16.
However, in this case, the rough surface treatment is required after the cleavage grooves 15 have been provided by etching, thereby reducing working efficiency. Moreover, when the cleavage grooves 15 are subjected to the rough surface treatment, micro cracks are accidentally generated in portions other than the insides of the cleavage grooves 15. The semiconductor multi-layer structure 11 may be broken at such portions.
Further, when the multi-element bar 15 is subjected to the first cleavage, the semiconductor multi-layer structure 11 is likely to be broken along the cleavage grooves 15 which are deep.
According to one aspect of the present invention, a method for producing a semiconductor element comprises the steps of: forming a plurality of grooves on a first surface of a semiconductor multi-layer structure along a first direction; forming a plurality of multi-element bars by cleaving the semiconductor multi-layer structure along a second direction; placing at least one of the plurality of multi-element bars on a support stage; and cleaving the at least one of the plurality of multi-element bars along the plurality of grooves by moving a pressure member in a longitudinal direction of the at least one of the plurality of multi-element bars while a constant load is applied by the pressure member to a second surface of the at least one of the plurality of multi-element bars, the second surface being opposite a third surface corresponding to the first surface of the at least one of the plurality of multi-element bars.
In one embodiment of this invention, the semiconductor multi-layer structure includes an active layer.
In one embodiment of this invention, the first direction is orthogonal to the second direction.
In one embodiment of this invention, the plurality of grooves are formed by etching.
In one embodiment of this invention, the multi-element bar is placed on the support stage via a support sheet.
In one embodiment of this invention, the support sheet includes polyvinyl chloride.
In one embodiment of this invention, the constant load is applied by the pressure member to the at least one of the plurality of multi-element bars via a protection sheet.
In one embodiment of this invention, the protection sheet includes a polyethylene terephthalate sheet, a surface of which is to be in contact with the pressure member is coated with a silicone resin.
In one embodiment of this invention, the support stage includes a rigid material.
In one embodiment of this invention, the rigid material includes at least one of a quartz, a glass, a metal, a stone, and a rigid plastic.
In one embodiment of this invention, a depth of the plurality of grooves is about 0.5 xcexcm or more and about 5 xcexcm or less from the first surface.
In one embodiment of this invention, a moving speed of the pressure member is about 10 mm/sec or more and about 100 mm/sec or less.
In one embodiment of this invention, the constant load applied to the at least one of the plurality of multi-element bars is about 5 N or more and about 20 N or less per multi-element bar.
According to another aspect of the present invention, a cleavage apparatus is provided for producing a semiconductor element using at least one multi-element bar, a plurality of grooves being provided in a predetermined direction on a first surface of the at least one multi-element bar. The apparatus comprises: a support stage for the at least one multi-element bar being provided; and a pressure member for applying a constant load to a second surface of the at least one multi-element bar, the second surface being opposite the first surface of the at least one multi-element bar, while the pressure member is moved in a longitudinal direction of the at least one multi-element bar.
In one embodiment of this invention, the at least one multi-element bar includes an active layer.
In one embodiment of this invention, the plurality of grooves are formed by etching.
In one embodiment of this invention, the support stage includes a rigid material.
In one embodiment of this invention, the rigid material includes at least one of the quartz, a glass, a metal, a stone, and a rigid plastic.
In one embodiment of this invention, a moving speed of the pressure member is about 10 mm/sec or more and about 100 mm/sec or less.
In one embodiment of this invention, the constant load applies to the at least one multi-element bars is about 5 N or more and about 20 N or less per multi-element bar.
In one embodiment of this invention, the pressure member does not rotate on the at least one multi-element bar.
In one embodiment of this invention, the pressure member is held by a spring, and the constant load is applied by the spring to the at least one multi-element bar.
Thus, the invention described herein makes possible the advantages of providing a method for producing a semiconductor element and a cleavage apparatus, in which a multi-element bar having shallow cleavage grooves formed by etching is efficiently and reliably cleaved into a plurality of semiconductor elements.
These and other advantages of the present invention will become apparent to those skilled in the art upon reading and understanding the following detailed description with reference to the accompanying figures.

Method and apparatus for producing semiconductor element


The semiconductor device comprises a substrate (1) of semiconductor material with a front side (4) and an opposite rear side (7), a wiring layer (5) at the front side (4), a further wiring layer (8) at the rear side (7), and a through-substrate via (3) connecting the wiring layer (5) and the further wiring layer (8). A hot plate (24) is arranged on or in the substrate, and a sensor layer (21) is arranged in the vicinity of the hot plate. A mold compound (14) is arranged on the rear side (7) above the substrate (1), a cavity (17) is formed in the mold compound (14) to accommodate the sensor layer (21), and the cavity (17) is covered with a membrane (15).

U.S. Pat. No. 7,495,300 B2 discloses a gas-sensing semiconductor device on silicon, comprising a resistive heater made of tungsten embedded in a thin silicon oxide layer that is formed over a recess of the silicon substrate. The device can be monolithically integrated with a circuitry using a CMOS process.
U.S. Pat. No. 7,659,612 B2 discloses semiconductor components comprising through wire interconnects, which are partially encapsulated by a polymer layer and include redistribution conductors and pads electrically connected with substrate contacts. A method for fabricating the components can include a film assisted molding process for forming the polymer layer on the wafer level. Following the film assisted molding process the components are singulated. The semiconductor components can be used to fabricate stacked systems.
TW 1290358 B discloses a packaging for a micro gas sensor, which is mounted in a receptacle of a carrier and is provided with electric connections. The receptacle is closed by a filter component, which is fixed to the carrier above the sensor and comprises a structure net and a thin film.
KR 101034647 B1 describes a wafer-level packaging for a gas sensor. A substrate comprising cavities containing sensors and support units is covered with a further substrate, which is provided with a cavity and an infrared filter. The substrates are bonded by means of a metal solder layer.
US 2012/0056312 A1 describes a production method for a stack of semiconductor wafers comprising through silicon vias and a plurality of dies mounted in cavities between the vias. An encapsulant is deposited over the dies. Interconnect structures are formed above the encapsulant and are electrically connected to the vias. When the wafers are provided with the encapsulant and the interconnect structures, they are mounted on top of each other.
US 2007/0045515 A1 discloses microelectronic imaging devices having integrated circuits and image sensors on opposite sides of a substrate, which is provided with through-substrate vias. Standoffs formed from a cover material support a transmissive element including glass, which is attached to the standoffs by attachment elements including adhesive layers and protects a microlens array and other features from contamination. The cover material can include a photoresist or another selectively removable substance.
US 2009/0256216 A1 discloses a wafer-level chip scale package of a sensor with a substrate comprising ICs, through-silicon vias and a protective encapsulant layer covering the top surface. Above a cavity accommodating the sensor, a cap is arranged either flush with the encapsulant layer or partially covered by the encapsulant layer.
US 2006/0154401 A1 discloses gas-sensing semiconducting devices including a gas-sensitive layer and a heater arranged in the vicinity of the gas-sensitive layer.
GB 2303710 A discloses a gas sensor with a gas-permeable membrane formed from polytetrafluoroethylene.
JP 2001-337063 A discloses a gas sensor inserted in a recessed part of a housing with bumps of the gas sensing part turned downward. Leads are connected by heating the bumps while the sensor main body is lowered towards the leads.
EP 1775259 A1 discloses a wafer level package for devices that may include two different sensors, in particular a pressure sensor and an accelerometer.
US 2010/0230766 A1 discloses a sensor device comprising an encapsulating mold material with polytetrafluoroethylene used as a coating material.

Semiconductor sensor device and method of producing a semiconductor sensor device


The present invention is an additive for producing a positive active material for lead-acid storage batteries on the basis of finely divided tetrabasic lead sulfate. The additive contains a tetrabasic lead sulfate of an average particle size less than about 3 μm as well as finely divided hydrophobic silicic acid for preventing agglomeration of the particles of the tetrabasic lead sulfate. During maturation, this additive ensures the formation of the structure of a tetrabasic lead sulfate crystal with a very narrow bandwidth of crystal sizes and a very homogeneous distribution. In the subsequent electrochemical formation to lead oxide, this leads to particularly efficient lead-acid storage batteries. Furthermore, the invention relates to a method of making the additive according to the invention as well as its advantageous use in the positive material for the maturation and drying of plates in the production of lead-acid storage batteries.

In the production of lead-acid storage batteries of the art, the positive plates are matured and dried in batches or continuously in so-called maturing and drying chambers after pasting the grids with the positive active material. From the main ingredients in the form of lead oxide, water, and lead sulfate, tribasic (3PbOPbSO4) and/or tetrabasic (4PbOPbSO4) lead sulfates are formed by maturation. Predominantly, the plates are laid in stacks on pallets without being separated. They are less often placed upright on pallets without separation, or hung with external lugs loosely in frames as occurs in the special case of double grids.
For the maturing to a tribasic lead sulfate with crystal sizes less than 10 μm, it is common practice to mature and subsequently dry the plates at about 55° C. over a period of time from 12 to 24 hours. Depending on the type of oxide that is used, as well as the desired residual moisture, drying can take as long as a few days.
For maturing to a tetrabasic lead sulfate, it is common practice to mature the plates in water vapor at a temperature of normally greater than 80° C., and to dry them thereafter in the same way as the plates that are matured to tribasic form. A great disadvantage in the case of such a maturing by the action of water vapor is the development of coarse-crystalline tetrabasic lead sulfate crystals. In this instance, there may be crystal sizes greater than 50 μm.
During the subsequent formation, the matured active material of the positive plates is electrochemically converted to lead dioxide. Along with the increasing crystal size, the conversion of the basic lead sulfates becomes costlier and lengthier. The required amount of electric energy for converting a coarse-crystalline structure is by more than 25% higher than that of a fine-crystalline structure. In this instance, a "fine-crystalline" structure is understood as material of a crystal size less than 10 μm. In the case of a coarse-crystalline structure, crystals greater than 30 μm are present. For a complete formation, it is moreover necessary to include residence times. By applying larger amounts of energy and the necessity of residence times that are to be included, the formation of coarse-crystalline, tetrabasic lead sulfate will as a rule take a substantially longer time.
The maturing into tetrabasic lead sulfates is advantageous in the case of lead-acid storage batteries with antimony-free alloys for the positive grids. Lead-acid storage batteries with antimony-free alloys for the positive grids and positive active materials that are matured into tetrabasic form, exhibit a stable capacity during a cyclical load, and they have a clearly longer service life. Lead-acid storage batteries with antimony-containing alloys of the positive grids are increasingly replaced with antimony-free grids, since these lead-acid storage batteries have moreover a longer shelf life as well as a visibly smaller water consumption.
For this reason, there exists a great interest in methods and possibilities of maturing positive plates into small-crystalline tetrabasic lead sulfates. In the art, two methods stand out:
According to a common production practice, the plates are first matured to become tribasic and dried to advantageously less than 0.5 wt. % residual moisture. Subsequently, a water vapor treatment occurs over several hours at temperatures of normally greater than 80° C. During this phase, the tribasic lead sulfate is converted into tetrabasic lead sulfate. In this process the crystal size remains almost unchanged, provided the moisture does not exceed about 2 wt % during the water vapor treatment of the plates. In the case of too moist plates, a growth to coarse-crystalline tetrabasic lead sulfate will occur. In the case of a properly conducted process, plates with small-crystalline tetrabasic lead sulfate are present after a subsequent, renewed drying process. A great disadvantage of this method lies in the long process time. Moreover, the paste-grid bonding is inferior to the positive plates that are matured in water vapor directly to coarse-crystalline tetrabasic lead sulfate.
In a second known method, previously finely ground tetrabasic lead sulfate is added to the active positive material during the production process. The maturation occurs in the same manner as in the case of the described maturation into coarse-crystalline tetrabasic lead sulfate by the action of water vapor and preferably at temperatures above 80° C. The added, finely ground tetrabasic lead sulfate crystals having a diameter less than 1 μm act as nucleators and allow individual plates a controlled crystal growth to a fine-crystalline tetrabasic crystal structure. Preferably, this method is carried out continuously.
The disadvantage of this method is the necessity of separating the plates, for example, by hanging double plates in spaced relationship or by a climatic diaphragm between individual plates. It is currently common practice in the production of plates for lead-acid storage batteries to stack them, after pasting, without spacers, and to mature them while being stacked. The necessity of singling the plates thus represents a considerable extra expenditure. As a result, it is not possible to use present systems and techniques for the plate production without new, additional devices or considerable modifications. The separation of the plates by spaces therebetween or climatic diaphragms leads to the need of more floor space, thereby reducing the capacity of plates in existing maturing and drying chambers.

Additive for producing a positive active material for lead-acid storage batteries, a method for its production and a method for its use


An over-center self adjusting cap chuck adapted for operative attachment to a high-speed capping machine includes a housing having an outer peripheral surface defining an inner annular periphery with an interior face. A plurality of independent engagement jaws are aligned along an annular area of, or within a pocket area of, the interior face. Each engagement jaw has a fastener to connect the engagement jaw to the housing and establish a pivot point to support a limited axial rotational movement thereof to a first open axial position and a second closed axial position for receiving and gripping a work piece respectively. Either a singular bias spring or a pair of bias springs pre-dispose the engagement jaws to the first open axial position. The engagement jaws include an upper beveled area above a work piece engagement finger that serves as an actuator when contacted by a work piece for self-adjusting movement to the second closed axial position whereby the gripping pressure upon the work piece is direct toward a center-point of a work piece receiving area until the pressure thereon is equalized.

1. Field of the Invention
The present invention relates generally to chucks, and more particularly to an over-center self-adjusting, equalizing cap chuck adapted for high-speed capping operations of bottle caps, especially bottle caps having a serrated outer periphery.
2. Description of the Related Art
The filling and capping process generally entails supplying containers along a conveyor, automatically filling them at a filling station, and automatically capping them at a capping station. Various testing and control functions may also be performed along the way. The apparatus that performs the process must be capable of accommodating a wide variety of containers and caps (both caps and containers may vary in size and shape), and this is accomplished by a universal chuck which allows quick and easy grasping and manipulation of different cap sizes.
Current common methodology for screw cap positioning and torque include the tapered chuck, the friction disk chuck, the donut chuck, and the segmented chuck, a description of which and the shortcomings of which may be found at the background art discussion of U.S. Pat. No. 6,170,232 to VandeGeijn. Thus, various designs have been suggested for bottle capping chucks.
The development of high-speed machining applications have required bottle capping chucks to operate at significantly higher rotational speeds for caps of varying size and characteristics, such as wall thickness and flexibility. Thus, adjustable chucks of the type in widespread use for gripping work pieces of different sizes typically include a number of internal moving parts, including, for example rocker arms, swivel mountings, bearings, slide members, toggle links, equalizing plates, and other complementary components interactive with each other, which serve to open and close or interact with the gripping jaws. Smooth operation of these parts is most important to assure that a positive clamping of the work piece is achieved when the jaws are closed, and further that each of the jaws applies equal pressure against work piece to prevent distortion and possible eccentric location of the work piece. Illustrative of such chucks are those designs disclosed in U.S. Pat. No. 6,665,699 to Grobbel, and U.S. Pat. Nos. 6,206,382 and 5,941,538 to Gonnocci.
The speeds at which chucks are used in moderate manufacturing processes have placed increasing importance upon the rotational balance of the chuck and the work piece held therein. For example, an imbalance may cause improper machining which results in rejection of the work piece. Alternatively, an imbalance may create a change in the gripping force as a result of the centrifugal force created by the rotation of the gripping jaw. Thus, it is desirable to provide a chuck which maintains a proper balance and constant gripping force independent of a capping machine's rotational spindle assembly speed, is selectively self-adjusting to allow light engagement of the cap and containers threads and to provide light contact between the threads during rotation of the cap, and is readily adjustable to variations in cap size and characteristics to insure undamaged concentric alignment during capping operations.
Additionally, it would be advantageous if a self-adjusting cap chuck addressing the foregoing needs could be used in a variety of capping machinery by ready adaptation to a spindle assembly thereof. Indeed, the entirety of U.S. Pat. No. 6,240,678 to Spether, U.S. Pat. No. 6,170,232 to VaneGeijn, U.S. Pat. No. 5,417,031 to Bankuty et al., and U.S. Pat. No. 5,135,242 to Toth are hereby incorporated by reference for their general teachings of capping machinery utilizing cap chucks.

Over-center self-adjusting equalizing cap chuck


A method and apparatus for the controlled feeding of added air into a permanently inertized room in which a predefined inertization level is or must be set and maintained within a certain control range provide for the volume flow rate at which an inert gas is fed into the room atmosphere to attain a value that is adequate for maintaining the predefined inertization level in the room atmosphere that will minimize fire risk. In addition, provisions are made whereby at all times just enough fresh air is injected into the room atmosphere as is necessary to remove from the room atmosphere that proportional concentration of hazardous substances that has not already been removed, via a corresponding return-air exhaust system as a result of the injection of inert gas.

1. Field of the Invention
This invention relates to a method and apparatus for providing additional supply air in a controlled manner into a permanently inertized room in which a predefined inertization level must be set and maintained within a specific control range.
2. Background Information
An established practice for reducing the risk of a fire in enclosed spaces such as EDP areas, electric switching and power-distribution compartments, sealed-off systems, or storage areas for particularly valuable commodities, has been to permanently inertize them. The preventive effect resulting from such permanent inertization is based on the principle of oxygen displacement. Normal ambient air is known to consist of about 21% by volume of oxygen, about 78% by volume of nitrogen and about 1% by volume of other gases. In order to effectively reduce the risk of a fire developing in a protected area, the so-called "inert-gas technique" is applied to correspondingly reduce the oxygen concentration by injecting into the room concerned an inert gas such as nitrogen. In terms of a fire-extinguishing effect, that level for most combustible solids is known to be reached when the proportional oxygen content has dropped to below 15% by volume. Depending on the specific combustible materials located in the protected area, it may be necessary to reduce the oxygen content even further, for instance to 12% by volume.
In other words, permanent inertization of the protected area down to a so-called "inertization base level", where the proportional oxygen content in the air of the protected area has been reduced to 15% by volume, effectively minimizes the risk of a fire developing in that protected area.
The definition of an "inertization base level" as used herein generally refers to an atmosphere in the protected area which, compared to the oxygen concentration in normal ambient air, is oxygen-depleted, although for medical reasons the oxygen reduction would not be such as to pose a hazard to humans or animals, allowing these to enter the protected area at least briefly and perhaps after taking certain precautions depending on the circumstances. As indicated above, the primary purpose of setting the inertization base level at an oxygen concentration for instance of 13% to 15% by volume is to reduce the risk of a fire developing in the protected area.
In contrast to the inertization base level, the so-called "fully inertized level" corresponds to a proportional oxygen content in the atmosphere of the protected area that has been reduced to a point where effective extinction of a fire begins to take place. Thus, compared to the oxygen content at the inertization base level, the term "fully inertized level" reflects an even lower oxygen concentration at which the combustibility of most materials has already been reduced to a point where an ignition is no longer possible. As a rule, depending on the fire load in the protected area concerned, the fully inertized level is reached at an oxygen concentration of around 11% to 12% by volume. It follows that permanent inertization of the protected area at the fully inertized level not only reduces the risk of a fire developing in the protected area but actually serves to extinguish a fire.
For permanently inertized rooms it is desirable, on the one hand, to build them in relatively air-tight fashion, allowing the inertization level set or to be set to be maintainable with a minimum of inert-gas replenishment. On the other hand, a certain minimum air exchange is generally indispensable even for permanently inertized rooms so as to permit a regeneration of the room atmosphere. For rooms occasionally entered by persons, or occupied by persons for extended periods, that minimum air exchange is needed to allow adequate venting for instance of the carbon dioxide exhaled or the moisture given off by these persons. Considering this example, it is evident that the minimum air exchange required for that room must necessarily be a function of the number of persons and the duration of their activity in the room, with especially the length of time being a variable factor.
To be sure, a minimum air exchange must be provided even for rooms that are essentially never or rarely entered by persons, for instance storage areas, archives or cable pits and ducts. In this case, the minimum air exchange is needed for exhausting potentially harmful components of the room atmosphere caused for instance by fumes emanating from equipment housed in the room at issue.
If the enclosure of the room concerned is sealed in nearly hermetic fashion as is usually the case especially in permanently inertized rooms, an uncontrolled air exchange can no longer take place. Enclosed spaces of that nature therefore make it necessary for a technical or mechanical ventilation system to provide that minimum air exchange. The term "technical ventilation" collectively refers to a venting system for drawing out hazardous substances or biological agents present in a room. In the case of rooms in which persons perform activities, the dimensioning of a technical ventilation system, especially the blower output, air exchange rate and air flow velocity, depends on the time-weighted average concentration of a substance in the room atmosphere at which any acute or chronic damage to a person's health is not to be expected. Venting the room permits an air exchange between the outside and the interior atmosphere. In general terms, the required minimum air exchange serves to remove toxic, hazardous substances, gases and aerosols to the outside and to inject needed substances, especially oxygen, into rooms in which people are present. The following description will refer to these toxic substances that are to be removed from the enclosed-space atmosphere through the minimum air exchange simply as "hazardous substances".
Large rooms or rooms in which the atmosphere contains a large amount of hazardous substances are now typically equipped with a mechanical ventilation system that ventilates the room either continuously or at preset times. The ventilation systems usually employed are designed to feed fresh air into the object room and to draw out spent or polluted air. Depending on the intended application, these are systems providing a controlled air intake (so-called "added-air systems"), or a controlled return air exhaust (so-called "air exhaust systems"), or they are combination air intake and exhaust systems.
The drawback of using this type of ventilation system for permanently inertized rooms, however, is that due to the air exchange, it is necessary to continuously feed inert gas into the permanently inertized room at a relatively high rate in order to maintain the preset level of inertization. It follows that, when mechanical ventilation is employed, maintaining the atmosphere in a permanently inertized room at the inertization base level or fully inertized level requires the supply of relatively large amounts of inert gas per time unit, produced for instance by appropriate on-site inert-gas generators. These inert-gas generators must have a correspondingly high output capacity, which in turn increases the operating cost of permanent inertization. Moreover, to produce inert gas, these generators use up a relatively large amount of energy. Therefore, from the economic point of view, applying inert-gas technology whereby a room is permanently inertized at the inertization base level or the fully inertized level for minimizing the risk of fire, entails relatively high operating costs whenever the permanently inertized room requires that minimum air exchange.

Method and apparatus for supplying additional air in a controlled manner


An image forming apparatus includes an image carrier which is rotated in a predetermined direction, a brush charger which charges a surface of the carrier, an exposure unit which forms an electrostatic latent image on the charged surface of the carrier in accordance with image information supplied thereto, a developer which develops the electrostatic latent image with a toner, and a transfer unit which transfers a toner image from the surface of the carrier onto a transfer medium supplied thereto. The image carrier includes a conductive main body, an undercoat having a predetermined electric resistance higher than that of the main body, and a photosensitive layer, which is formed on the undercoat, and on which an electrostatic latent image is formed by the exposure unit after charging is performed by the charger. The charger includes a main body constituted by bristles consisting of conductive fibers having electric resistance within the range from about 10.sup.6 to about 10.sup.9 .OMEGA./cm, a conductive base cloth, which has an electric resistance lower than that of each of the brush bristles, and on which the bristles are furnished, and a base member to which the base cloth is fixed, and a voltage applying unit for applying a predetermined voltage to the base cloth. And, the bristles contact the photosensitive layer of the carrier by a predetermined length.

1. Field of the Invention
The present invention relates to an image forming apparatus comprising an image carrier which is rotated in a predetermined direction, charging means for charging the peripheral surface of the image carrier, printing means for forming an electrostatic latent image on the charged peripheral surface of the image carrier in accordance with image information, developing means for developing the electrostatic latent image with a toner, and transfer means for transferring the toner image from the peripheral surface of the image carrier onto a transfer medium and, more particularly, to an image forming apparatus having a brush charger as the charging means.
2. Description of the Related Art
The above-described image forming apparatus is widely known as an apparatus of an electrophotographic type, which is used for, e.g., a printer, a copying machine, and a facsimile apparatus.
In such a conventional image forming apparatus, a corona charger is used as charging means. The corona charger serves to charge the peripheral surface of an image carrier by corona discharge. The corona charger requires a high voltage of several kV or more to generate corona discharge. In addition, the following problems are appeared in this charger. Upon corona discharge, the corona charger generates a large amount of ozone to adversely affect the image carrier (photosensitive member) and its neighboring members and environment. It is also difficult to reduce the size of the corona charger.
Under the circumstances, the use of a brush charger as charging means is proposed, as disclosed in, e.g., U.S. Pat. No. 5,060,016. The brush charger requires a relatively low voltage of about 1 kV and generates no ozone during its operation. In addition, the size of the brush charger is greatly smaller than that of the corona charger.
FIG. 1 shows the basic structure of the brush charger. In this case, a brush charger 10 is constructed by bonding a conductive base cloth 10b, on which a large number of conductive brush bristles 10a are furnished, to a conductive base plate 10d with a conductive adhesive 10c.
The large number of conductive brush bristles 10a are in contact with the peripheral surface of a photosensitive drum 12 as an image carrier. When a power supply (not shown) supplies a direct current to the brush charger 10 at a voltage of about 1 kV and the photosensitive drum 12 is rotated in a predetermined direction A at a predetermined speed, th peripheral surface of the photosensitive drum 12 is charged.
Printing means, toner developing means, transfer means, and toner cleaning means, all of which are well known, are arranged along the peripheral surface of the photosensitive drum 12 in the above described order from the brush charger 10 in the rotational direction of the photosensitive drum 12. The printing means forms an electrostatic latent image on the charged region of the peripheral surface of the photosensitive drum 12 in accordance with image information supplied to the printing means. The toner developing means develops the electrostatic latent image with a toner. The transfer means transfers the toner image, formed on the peripheral surface of the photosensitive drum 12, onto a transfer medium such as a paper sheet supplied to the transfer means. The toner cleaning means removes the residual toner on the peripheral surface of the photosensitive drum 12 after the toner image is transferred onto the paper sheet.
Although the brush charger has the above-described various merits as compared with the conventional corona charger, it also has the following demerits based on the fact that the brush charger is in direct contact with the peripheral surface of the photosensitive drum 12.
The first demerit is the instability of a charging property. Electric resistance of the conductive brush bristles 10a easily varies with changes in environmental conditions, especially temperature and humidity. In addition, as shown in FIG. 2, when the electric resistance of the conductive brush bristles 10a exceeds about 10.sup.8 .OMEGA./cm, the surface electric potential (charging property) on the photosensitive drum 12 decreases. Especially, when the former value exceeds 10.sup.9 .OMEGA./cm, the latter value abruptly decreases. If, therefore, conductive brush bristles 10a having an electric resistance exceeding about 10.sup.9 .OMEGA./cm are used, a difference in electric resistance as high as about 1 M.OMEGA./cm is caused even in the same brush charger 10 with changes in environmental conditions, and therefore the surface electric potential (charging property) of the photosensitive drum 12 generated by such a conductive brush bristles 10a is widely changed.
The second demerit is nonuniformity of electric charge. If the brush charger 10 is formed by using the conductive brush bristles 10a having a wide range of having electric resistance exceeding about 10.sup.9 .OMEGA./cm, variations in electric resistance with changes in environmental conditions are increased especially in the conductive brush bristles having electric resistance exceeding about 10.sup.9 .OMEGA./cm. Consequently, large nonuniformity of electric resistance occurs in one brush charger 10, resulting in large nonuniformity of surface electric potential (charging property) generated on the peripheral surface of the photosensitive drum 12.
On a paper sheet on which a toner image is transferred, the nonuniformity of electric charge appears as a stain on a white background or a blank portion on a black background.
In order to eliminate the first and second demerits, it is required that only the conductive brush bristles 10a having electric resistances lower than about 10.sup.9 .OMEGA./cm be used.
The third demerit is that if the electric resistance of the conductive brush bristles 10a is too low, a large leakage current is generated between a conductive main body 12b of the photosensitive drum 12 and the brush charger 10 when pinholes 12c or scratches are formed in a conductive layer or a photosensitive layer 12a on the peripheral surface of the photosensitive drum 12.
Although this leakage current varies depending on the voltage of the power supply for the brush charger or the electric resistance of the brush charger, it reaches as high as several thousands .mu.A and may produce spark discharge.
If a leakage current is generated, a power supply fuse is cut off or a local charge failure is produced in the peripheral surface of the photosensitive drum 12. Since this charge failure portion, together with an electrostatic latent image, is developed with a toner, if the charge failure portion is not included in the electrostatic latent image, a non-intended transfer toner image corresponding to the charge failure portion is appeared on a region of a white background of a paper sheet prepared for being transferred with a toner image.
If spark discharge is generated, a spark discharged part of the peripheral surface of the photosensitive drum 12 and/or the corresponding conductive brush bristles 10a are burnt and damaged.
In order to prevent the generation of a leakage current, the conductive brush bristles 10a are required to have electric resistance exceeding about 10.sup.8 .OMEGA./cm.
As described in detail above, in order to prevent the above described three demerits from appearing in the use of the brush charger 10, the electric resistance of the brush charger 10 is required to fall at least within the range from about 10.sup.8 .OMEGA./cm to about 10.sup.9 .OMEGA./cm.
It is, however, technically difficult to manufacture only conductive brush bristles 10a having such a narrow range of electric resistance. In addition, it requires much labor and cost to select only conductive brush bristles 10a having the above-mentioned specific narrow range of electric resistance from a large number of conductive brush bristles 10a having a wide range of electric resistance.
Published Unexamined Japanese Patent Application No. 1-150510 discloses a photosensitive drum designed to prevent the generation of the above-mentioned leakage current.
In this known photosensitive drum, an undercoat layer having a predetermined electric resistance is interposed between the peripheral surface of a conductive main body consisting of aluminum, steel, stainless, or the like and a conductive layer or a photosensitive layer formed on the peripheral surface. The undercoat layer is required to prevent a leakage current from being generated between conductive brush bristles, which are in contact with the conductive layer or the photosensitive layer formed on the undercoat layer, and the conductive main body under the undercoat layer even if pinholes or scratches are formed in the conductive layer or the photosensitive layer. However, the undercoat layer must not have too high in an electric resistance to prevent a printing means from forming a clear electrostatic latent image on the photosensitive drum.
The above describe application discloses that an undercoat layers can be constituted by the following materials: a synthetic resin film having a predetermined conductivity, a metal deposition film, a metal plating film, a metal foil, a mixture of a binder and a metal powder or a composite metal oxide containing Al.sub.2 O.sub.3, and a mixture of a metal-oxide-based conductive material and a thixotropic agent of calcite type calcium carbonate.
Published Unexamined Japanese Utility Model Application No. 3-35551 discloses a brush charger in which a desired electric resistance falling within the range of about 10.sup.6 .OMEGA./cm to about 10.sup.8 .OMEGA./cm is achieved as a whole in such a manner that flexible conductive brush bristles having electric resistances of about 10.sup.3 .OMEGA./cm or less and no humidity dependence are fixed to an electrode with a conductive intermediate layer, which has a relatively high electric resistance of about 10.sup.6 .OMEGA./cm to about 10.sup.13 .OMEGA./cm and no humidity dependence, being interposed therebetween.
In this conventional brush charger, however, electric resistance generated by a combination of each conductive brush bristle and the conductive intermediate layer tend to vary easily. Therefore, relatively large nonuniformity of electric resistance tends to occur in the brush charger as a whole.
Furthermore, in this conventional case, the manufacturing process is complicated by an operation of combining two types of conductive materials, resulting in an increase in manufacturing cost.

Contact-type electroconductive brush for electrically charging an image carrier of an image forming apparatus

Casio Electronics Manufacturing Co., Ltd.


To extremely reduce the capacity of a container body when juice or mineral water in a container body is drunk up and the container body is discarded. The container body includes: a top tap; a small width in a height direction at a bottom; and a horizontal bellows formed on the whole or part in a longitudinal direction of the container body, except the top tap, and the width in the height direction.

1. Field of the Invention
The present invention relates to a container for juice or mineral water formed by a blow molding method or the like, which is referred to as stretch blow molding, injection blow molding, or generally PET blow molding, and more particularly to a container whose lengthwise size can be reduced (capacity can be reduced) after the content is drunk up and the contraction method thereof.
2. Description of the Related Art
Production of synthetic resin bottles has been considerably increasing in recent years. However, after juice or mineral water in a container body is drunk up, the container body is discarded with a shape thereof remaining as before drinking up. When the container body is discarded in a trash can, the trash can is soon filled as if air were discarded therein, and finally the container body is left on a road, deteriorating life environments. In addition, costs for collecting drained container bodies and labor costs for cleaning place a heavy burden on public works.
Although this kind of synthetic resin bottle can be manufactured by simple means such as blow molding, it cannot sufficiently resist strong vibrations of automobiles or other transportation means or stacking for display at a store.
Furthermore, while the container is transported from a container manufacturer to a bottler of juice or mineral water, the container body is bulky as if air were transported, requiring considerably high costs for transporting the product.
Thus, the inventor of the application has suggested a liquid container that can be easily contracted when drained and collected. The liquid container is made of relatively soft synthetic resin, and a body thereof has a bellows peripheral wall with a top tap (Japanese Patent Laid-Open No. 2001-213418, Abstract).
In addition, the inventor has suggested applying a load on a container body in a perpendicular direction and/or a twisting direction to cause contraction of the capacity, means for keeping the contracted shape, and the container body (Japanese Patent Laid-Open No. 2002-68156, Abstract). However, both of the above suggestions cannot achieve a reduced height and sufficient contraction of the container to keep the contracted state when the container body is collapsed.

This patent is subject to a terminal disclaimer.

Container capable of keeping a lengthwise contracted state and contraction method thereof


A support post mounts an axle at a first end thereof, with a handle at the other end of the support post, with a first container structure mounted adjacent the axle for use carrying a door member thereon, with a second container structure positioned adjacent the handle to receive and align the door relative to the support post. The axle having wheel members rotatably mounted thereto permits ease of manipulation of the door positioned upon the apparatus.

1. Field of the Invention
The field of invention relates to dolly apparatus, and more particularly pertains to a new and improved door dolly apparatus wherein the same is arranged for the manipulation of a door member.
2. Description of the Prior Art
Dolly structure of various types have been utilized throughout the prior art such as indicated by the U.S. Pat. Nos. 4,458,906; 5,028,062; 4,277,075; and 4,178,006.
The instant invention attempts to overcome deficiencies of the prior art by employing a dolly structure arranged for the particular and specialized accommodation of a door member to permit ease of manipulation of a door member and in this respect, the present invention substantially fulfills this need.


A transfer case for a vehicle having two output shafts, a gear reduction assembly, a coupling mechanism and an overrunning roller clutch for selectively producing driving of one shaft only or both shafts concurrently. The coupling mechanism selectively couples one output shaft to either (1) an input shaft, (2) the gear reduction assembly, or (3) a neutral position. The overrunning clutch has an inner race, an outer race, and rollers located between the races. Drag shoes are positioned to frictionally slide on a drag surface of a selectively grounded member to retard the rollers. A resilient band urges the drag shoes against the drag surface. When the drag shoes rotate at a sufficient speed they disengage from the drag surface so as to provide no force to retard the rollers. When the ground member is grounded it provides the drag surface for the drag shoes. When the ground member is ungrounded it is free to rotate and the drag shoes do not provide a drag force to bias the rollers. A latch may be coupled to the inner race to engage a roller cage to prevent high speed lock-up. A drag ring is located inside the outer race and provides a drag force on the rollers to advance the rollers when it is desired, e.g., when front wheel compression braking is advantageous. An actuator assembly is provided with a variable speed drive for shifting the transfer case between modes of operation.

1. Field of the Invention
This invention pertains to transfer cases in vehicles having multiple drive modes, and more particularly pertains to transfer cases having an actuator for shifting between drive modes.
2. Description of the Related Art
Four-wheel drive vehicles generally incorporate some manner of transfer case by which torque from a single output shaft from a power source is transferred to two output shafts for driving separate axles of a vehicle. In a standard configuration of a four-wheel drive vehicle the rear wheels constantly receive torque from the power source and the front wheels receive torque selectively, for example, "on-demand," when the rear wheels slip, or "part-time," when an operator shifts the transfer case to four-wheel drive mode.
Various transfer case designs address different vehicle operating conditions and requirements. One style of transfer case incorporates an input shaft having a splined end, and a fixedly attached sun gear that cooperates with a planetary gear assembly. A shifting mechanism couples one output shaft to the planetary gear assembly or directly to the input shaft to provide different ranges of operation (e.g., low range, high range). That one output shaft may then be selectively coupled to a second output shaft to transfer torque thereto.
One method of transferring torque between output shafts uses an overrunning roller clutch. Such a transfer case is shown in Fogelberg U.S. Pat. No. 4,124,085. Basic roller clutch design is known in the art.
The basic design of a roller clutch, without the overrunning feature, has concentric races with rollers (preferably needle rollers) located between the races. One of the races (typically the inner race) has a plurality of cam surfaces for engaging the rollers and thus is designated the driving race or driving member. When either race rotates faster than the other, the rollers jam (i.e., lock) the cams and the driven race, thus engaging the clutch to transfer torque. Each roller can lock in one of two positions: a "retarded" position, that is at a trailing edge of a cam surface or an "advanced" position located at a leading edge of each cam surface.
In an overrunning clutch, the rollers are biased into a retarded position, that is biased opposite the direction of rotation, by a drag member. This allows the driven member to overrun the driving member without engaging the rollers bearings on the cams. However, when the driving member begins to overrun the driven member, the rollers quickly engage and torque from the driving member is transfered to the driven member.
Drag members add inefficiency to the roller clutch assembly because the drag forces reduce fuel efficiency and generate substantial heat, particularly during high speed operation. That heat requires the use of specific materials that can withstand the friction and high temperatures for long periods of time. Typically, such materials are more expensive than less wear-resistant and heat-resistant materials.
Sometimes the driven member can overrun sufficiently to overcome the force that retards the rollers. The rollers then advance, that is progress forward in the same direction of rotation as the races. If the rollers advance sufficiently, they can engage the cams so that the driven member actually drives the other (defeating the overrun feature). If this occurs, the clutch can lock up and remain in the engaged configuration even when the driven member is not trying to overrun the driving member. This condition causes an awkward driving experience.


A combination tool including a base body with several reaming blades each having a chamfer and a guide surface, arranged around the circumference of the base body, for reaming a cylinder bore. The combination tool also has at least one grooving blade arranged axially offset from the reaming blades and which may be extended radially relative to the base body. The combination tool is provided with two guide strips, arranged in the base body, at an angle to each other, between two reaming blades which are adjacent in the circumferential direction and displaced axially relative to the above in the direction of the grooving blade.

A combination tool of this type is known and has a high number, for example, ten, reaming blades distributively arranged over the circumference and a grooving blade radially movably controllable through a slide mechanism. The cutting forces occurring during the grooving operation are there received by the reaming blades supported in the bore. Due to the reaction forces occurring during the controlling of the grooving plates it is possible for the reaming blades to get caught on the wall of the bore. From this results a risk of vibration which can lead to complications during machining.
Starting out from this, the basic purpose of the invention is to improve the known combination tool of the above-disclosed type so that the risk of vibration is reduced during the grooving operation.

KOMET Praezisionswerkzeuge Robert Breuning GmbH


The present invention relates to combinations and methods for the treatment of neurological disorders related to glutamate excitotoxicity and Amyloid β toxicity. More specifically, the present invention relates to novel combinatorial therapies of Alzheimer's disease, Alzheimer's disease related disorders, amyotrophic lateral sclerosis, multiple sclerosis, Parkinson's disease, Huntington's disease, neuropathic pain, alcoholic neuropathy, alcoholism or alcohol withdrawal, or spinal cord injury, based on baclofen and acamprosate combination.

Alzheimer's disease (AD) is the prototypic cortical dementia characterized by memory deficit together with dysphasia (language disorder in which there is an impairment of speech and of comprehension of speech), dyspraxia (disability to coordinate and perform certain purposeful movements and gestures in the absence of motor or sensory impairments) and agnosia (ability to recognize objects, persons, sounds, shapes, or smells) attributable to involvement of the cortical association areas. Special symptoms such as spastic paraparesis (weakness affecting the lower extremities) can also be involved [1-4].
Incidence of Alzheimer's disease increases dramatically with the age. AD is at present the most common cause of dementia. It is clinically characterized by a global decline of cognitive function that progresses slowly and leaves end-stage patients bound to bed, incontinent and dependent on custodial care. Death occurs, on average, 9 years after diagnosis [5].
United Nation population projections estimate that the number of people older than 80 years will approach 370 million by the year 2050. Currently, it is estimated that 50% of people older than age 85 years are afflicted with AD. Therefore, more than 100 million people worldwide will suffer from dementia in 50 years. The vast number of people requiring constant care and other services will severely affect medical, monetary and human resources [6].
Memory impairment is the early feature of the disease and involves episodic memory (memory for day-today events). Semantic memory (memory for verbal and visual meaning) is involved later in the disease. By contrast, working memory (short-term memory involving structures and processes used for temporarily storing and manipulating information) and procedural memory (unconscious memory that is long-term memory of skills and procedure) are preserved until late. As the disease progresses, the additional features of language impairment, visual perceptual and spatial deficits, agnosias and apraxias emerge.
The classic picture of Alzheimer's disease is sufficiently characteristic to allow identification in approximately 80% of cases [7]. Nevertheless, clinical heterogeneity does occur and this is not only important for clinical management but provides further implication of specific medication treatments for functionally different forms [8].
The pathological hallmark of AD includes amyloid plaques containing beta-amyloid (Abeta), neurofibrillary tangles (NFT) containing Tau and neuronal and synaptic dysfunction and loss [9-11]. For the last decade, two major hypotheses on the cause of AD have been proposed: the "amyloid cascade hypothesis", which states that the neurodegenerative process is a series of events triggered by the abnormal processing of the Amyloid Precursor Protein (APP) [12], and the "neuronal cytoskeletal degeneration hypothesis" [13], which proposes that cytoskeletal changes are the triggering events. The most widely accepted theory explaining AD progression remains the amyloid cascade hypothesis [14-16] and AD researchers have mainly focused on determining the mechanisms underlying the toxicity associated with Abeta proteins. Microvascular permeability and remodeling, aberrant angiogenesis and blood brain barrier (BBB) breakdown have been identified as key events contributing to the APP toxicity in the amyloid cascade [17]. On the contrary, Tau protein has received much less attention from the pharmaceutical industry than amyloid, because of both fundamental and practical concerns. Moreover, synaptic density change is the pathological lesion that best correlates with cognitive impairment than the two others. Studies have revealed that the amyloid pathology appears to progress in a neurotransmitter-specific manner where the cholinergic terminals appear most vulnerable, followed by the glutamatergic terminals and finally by the GABAergic terminals [11]. Glutamate is the most abundant excitatory neurotransmitter in the mammalian nervous system. Under pathological conditions, its abnormal accumulation in the synaptic cleft leads to glutamate receptors overactivation [18]. Abnormal accumulation of glutamate in synaptic cleft leads to the overactivation of glutamate receptors that results in pathological processes and finally in neuronal cell death. This process, named excitotoxicity, is commonly observed in neuronal tissues during acute and chronic neurological disorders.
It is becoming evident that excitotoxicity is involved in the pathogenesis of multiple disorders of various etiology such as: spinal cord injury, stroke, traumatic brain injury, hearing loss, alcoholism and alcohol withdrawal, alcoholic neuropathy, or neuropathic pain as well as neurodegenerative diseases such as Frontotemporal dementia, multiple sclerosis, Alzheimer's disease, Amyotrophic Lateral Sclerosis, Parkinson's disease, and Huntington's disease [19-21]. The development of efficient treatment for these diseases remains major public health issues due to their incidence as well as lack of curative treatments.
Two kinds of medication are used for improving or slowing down symptoms of AD which lay on some acetylcholinesterase modulators and a blocker of NMDA glutamate receptors, memantine [22,23].
NMDAR antagonists that target various sites of this receptor have been tested to counteract excitotoxicity. Uncompetitive NMDAR antagonists target the ion channel pore thus reducing the calcium entry into postsynaptic neurons. Some of them reached the approval status. As an example, memantine is currently approved in moderate to severe Alzheimer's disease. It is clinically tested in other indications that include a component of excitotoxicity such as alcohol dependence (phase II), amyotrophic lateral sclerosis (phase III), dementia associated with Parkinson (phase II), epilepsy, Huntington's disease (phase IV), multiple sclerosis (phase IV), Parkinson's disease (phase IV) and traumatic brain injury (phase IV). This molecule is however of limited benefit to most Alzheimer's disease patients, because it has only modest symptomatic effects. Another approach in limiting excitotoxicity consists in inhibiting the presynaptic release of glutamate. Riluzole, currently approved in amyotrophic lateral sclerosis, showed encouraging results in ischemia and traumatic brain injury models [24-26]. It is at present tested in phase II trials in early multiple sclerosis, Parkinson's disease (does not show any better results than placebo) as well as spinal cord injury. In 1995, the drug reached orphan drug status for the treatment of amyotrophic lateral sclerosis and in 1996 for the treatment of Huntington's disease. The use of NMDA receptor antagonists such as memantine, felbamate, acamprosate and MRZ 2/579 for treating depression has also been suggested in US2010076075.
WO2009133128, WO2009133141, WO2009133142 and WO2011054759 disclose drug combinations for use in the treatment of AD.
Despite active research in this area, there is still a need for alternative or improved efficient therapies for neurological disorders and, in particular, neurological disorders which are related to glutamate and/or amyloid beta toxicity. The present invention provides new treatments for such neurological diseases of the central nervous system (CNS) and the peripheral nervous system (PNS).

Baclofen and acamprosate based therapy of neurological disorders


The disclosed embodiments illustrate methods and systems for processing crowd-sensed data. The method includes receiving the crowd-sensed data from a mobile device associated with a user. The crowd-sensed data corresponds to metadata of an event pertaining to an aberration in at least one of a public service, a public infrastructure, a private service, or a private infrastructure. Thereafter, the event may be prioritized based at least on a type of the event, a measure of impact of the event, or a measure of urgency to resolve the event. Further, a notification of the event may be transmitted to an organization responsible to at least resolve the event, based on the prioritizing, wherein the notification comprises at least the metadata.

Development in a city may involve development of infrastructure. In an embodiment, the development of said infrastructure may include developing public infrastructure such as, but not limited to, roads, hospitals, and metros. The development of infrastructure may also include the development of private infrastructure such as, but not limited to, housing societies, private homes, and the like.
The infrastructure may require regular maintenance to provide seamless service to the public. To determine the maintenance need in the said infrastructure, one or more sensors may be installed to monitor the condition of the infrastructure. For instance, sensors/cameras may be installed to determine or detect potholes on the road. However, processing the data captured through the sensors may have various limitations that are inherent to the techniques used for detecting such aberrations in the infrastructure (e.g., image processing and machine learning techniques). For instance, image processing techniques may be limited by the lighting conditions in which the image was captured by the sensor. Further, the machine learning techniques may be constrained by the robustness of data based on which the system was trained.

Methods and systems for processing crowd-sensed data