A method of producing a continuously cast metal rod capable of producing a high-quality continuously cast material is provided. In the method of producing a continuously cast metal rod, a cooling liquid is supplied to each of outer peripheral surfaces of a plurality of ingots extracted from a plurality of molds in parallel to cool each of the plurality of ingots. In a predetermined ingot, the number of adjacent ingots is the number of other ingots arranged around the predetermined so as to face the predetermined ingot, and an ingot small in the number of adjacent ingots is cooled with weak cooling in which the degree of cooling by the cooling liquid is reduced with respect to an ingot large in the number of adjacent ingots.

In various aluminum products based on aluminum materials, forged products produced by forging, rolled products produced by rolling, and extruded products produced by extrusion are often used for products requiring high quality and high strength with less variation. A forging material, a rolling material, and an extrusion material to be subjected to the above-mentioned processing are often produced based on a continuously cast material obtained by continuously casting of aluminum.
As a production apparatus (continuous casting apparatus) for producing a continuously cast material, for example, as shown in Patent Documents 1 and 2 listed below, a vertical-type continuous casting apparatus in which the casting direction is vertically downward is known. In this vertical-type continuous casting apparatus, a molten metal is passed through a mold, and an outer peripheral surface of an ingot is solidified, and cooling water as a cooling liquid (cooling medium) is ejected to the ingot from the entire periphery thereof right under the mold to rapidly cool down the entire ingot.
Conventionally, as a cooling water ejection method for cooling an ingot, as shown in Documents 1 and 2, a method of ejecting cooling water from slit-like or circular hole-like cooling water spouting ports provided around the outer periphery of an ingot is generally used.
In such aluminum continuous casting, the step of cooling an ingot is a very important step, and by being rapidly solidified from the entire periphery of the ingot to the inside thereof (central portion) in a balanced manner, the ingot structure can be controlled in a good state, so that the material crystal structure, the crystalline, and the precipitation behavior become uniform in the entirety of the ingot. Thus, a high quality continuously cast material having a good ingot structure with no variation can be produced.

Production method and production apparatus of continuously cast metal rod


A surface acoustic wave device makes it possible to increase the electrode width without generating mass-electrical-loading and is capable of operating in a high-frequency band higher than or equal to the UHF band, and this surface acoustic way device may be used in a communication device to eliminate need for any down-converter which is indispensable to the conventional high-frequency communication device, and which is therefore capable of being manufactured at a reduced cost. The surface acoustic wave device is provided with an electrode structure meeting conditions represented by: s+m=(2n+1)L/(4k), where L is electrode period, not taking into consideration the polarity of an interdigital transducer, m is electrode line width, s is minimum electrode gap width, and n and k are natural numbers. The surface acoustic wave device is used as the demodulator of the communication device.

The present invention relates to a surface acoustic wave device, and a communication device employing the surface acoustic wave device. More particularly, the present invention relates to a spread spectrum (hereinafter abbreviated to "SS") communication system and a communication device suitable for a SS communication system.
Recently, an SS communication system for communication devices, having high noise resistance and excellent privacy function has become an object of attention.
Generally, in the SS communication system, an SS signal, i.e., a transmit signal, is a signal spread in a very wide frequency band produced by the SS-modulation of a carrier wave in a narrow frequency band, obtained by modulating information to be transferred by a base band signal, using a predetermined code series having a predetermined high bit rate.
When receiving a signal which has been SS-modulated by a direct modulation system using, for example, a pseudo noise (hereinafter abbreviated to "PN") code series, in such an SS communication system, a demodulator for demodulating the SS signal uses the same PN code as the PN code used by the transmitting device for SS-modulation, and extracts the received SS signal as an information bit signal only when the received SS signal coincides with the PN code.
The SS signal which has been SS-modulated by using such a given code has a frequency band which is far wider then the frequency band for an ordinary communication system, and hence the SS signal is resistant to noise, has a low power spectrum density and an excellent privacy function. Therefore, the SS signal is difficult to wiretap. Using a predetermined code, such as a PN code, for SS-modulation and SS-demodulation, the SS communication system need not take frequency assignment into consideration, whereas the ordinary communication system needs to assign frequencies to avoid interference. Therefore, the SS communication system is not subject to a frequency shortage problem in assigning frequencies to communication stations due to increase in communication stations.
However, communication devices of the SS communication system usually are very costly because these communication devices need a large-scale integrated circuit and, therefore, the use of these communication devices has been limited to military communication or satellite communication.
A demodulator for demodulating an SS signal, employing a surface acoustic wave device as a matched filter and a delaying circuit for delaying an output correlation peak of the matched filter by one period of a PN code, proposed in, for example, Japanese Patent Laid-open (Kokai) No. 4-346528, is a communication device of the SS system having a simple configuration, and is capable of providing for being fabricated at a low cost and of high-speed signal processing.
A split-connect type surface acoustic wave device mentioned in "1973 ULTRASONICS SYMPOSIUM Proceedings", pp. 407-409, is employed as a surface acoustic wave device in such a demodulator. This surface acoustic wave device has an electrode line width and an electrode gap width equal to 1/8 of the wavelength of a surface wave of a frequency corresponding to the center frequency of the filter and pairs of electrode digits alternately connected to electrodes of different polarities, to suppress mass-electrical-loading (hereinafter abbreviated to "MEL") due to the difference in acoustic impedance to surface waves between portions provided with electrodes and those not provided with electrodes.
SS signals having frequencies in a frequency band of 100 to 150 MHz are preferable for this known communication device. When SS communication is performed by using SS signals having frequencies in a frequency band including, for example, a center frequency of 2.4 GHz and which is higher than or equal to the UHF band, the GHz band frequency of an SS signal is reduced to a frequency in a low frequency band, for example, a MHz band, the SS signal is converted into a correlation output with a PN code by a matched filter 35, the correlation output is multiplied by a signal provided one bit before the correlation output by a delaying circuit 36 using a mixer 37 for demodulation, and the waveform of the output signal of the mixer 37 is converted into a digital rectangular waveform by a hold waveform shaping circuit 38, as shown in FIG. 14, because a surface acoustic wave device serving as the matched filter 35, and a surface acoustic wave device serving as the delaying circuit 36 are unable to deal with signals of frequencies in a frequency band higher than or equal to the UHF band. Therefore, the communication device that uses signals of frequencies in a frequency band higher than or equal to the UHF band needs a down-converter 33 for reducing the frequencies of the SS signals.
The down-converter 33 needs an oscillator, which increases the cost and hampers miniaturization. In addition, in a communication device provided with a modulator and a demodulator, the down-converter 33 becomes a source of interference when the modulator performs SS-modulation.
If the surface acoustic wave device being used as a matched filter is able to deal with signals having frequencies higher than or equal to those in the UHF band, the down-converter 33 becomes unnecessary. However, the electrodes of the conventional surface acoustic wave device have a small electrode line width when the center frequency of the filter is high. For example, the electrode line width must be 0.2 .mu.m or below to make a filter having a center frequency of 2.4 GHz. However, it is difficult to form electrode lines of such a small electrode line width using conventional photolithography. If a solid type electrode structure in which alternate electrode digits are connected to common electrodes of different polarities, is employed, the electrode line width may be doubled, and can be formed by conventional photolithography. However, MEL occurs to deteriorate the filtering characteristics resulting in the deterioration of the performance of the communication device.

Surface acoustic wave device and communication device employing the surface acoustic wave device


A closed-loop control device for a process, in which a dead band element is connected upstream of a linear dynamic controller to reduce actuating interventions in the steady control state. If a control deviation (e) of the control loop exceeds a first threshold value (s1), then the dead band element is automatically deactivated, where a control deviation (e1) passed via the dead band element is uninfluenced by a set dead band in the inactive state. If the control deviation (e) then undershoots a second threshold value that is less than the first threshold value, then the dead band element is automatically re-activated. This reduces the energy consumption and wear of an actuator and improves the control behavior with regard to steady-state accuracy and the control behavior of the control loop.

1. Field of the Invention
The invention relates to a closed-loop control device for a process in which a dead band element is connected upstream of a linear dynamic controller.
2. Description of the Related Art
The function manual "Prozessleitsystem PCS 7, PCS 7 Advanced Process Library V71", March/2009, discloses PID controllers, which may also be referred to as P, PI or PD controllers depending on the configuration, or model-predictive controllers, which are referred to as ModPreCon there, for example, as linear dynamic controllers that can have a dead band element connected upstream of them when used in a closed-loop control device. The transfer function of a dead band element described there is illustrated in FIG. 2. With a dead band element connected upstream, a control difference that is passed to the controller is formed from an effective desired value SP and a process value PV and is available to the controller at the output ER. In order to suppress disturbances in the steady state or to suppress unavoidable measurement noise, the dead band can be activated and the lower band limit −D (dead band) can be parameterized together with the upper band limit D. If D is set to 0, then the dead band is deactivated but, if D is not equal to 0, then the dead band is activated. The dead band is parameterized by the user and is constant during operation. Here, the dead band is ideally parameterized such that the likelihood of actuating interventions is low if the controlled variable has stabilized inside the dead band. This requires a sensible selection of the width of the dead band.
The width of the dead band primarily depends on the control precision desired by the process, i.e., on the maximum permissible remaining control deviations and possibly, for example, if a switching actuator is used, on the change in the controlled variable with the minimum possible change in the manipulated variable. With regard to minimizing actuating interventions, the following setting rules help in this case to select the dead band to be so wide that variance in the controlled variable, which is unavoidable on account of measurement noise or quantization noise for example, does not result in frequent actuating movements.
Firstly, assuming a normal statistical distribution of the values of the controlled variable around the desired value, two to three times the standard deviation of the controlled variable in the steady state is used as the width of the dead band. If the closed-loop control device is provided with a monitoring module for determining characteristic variables for the control behavior, which is also referred to as control performance management (CPM) or ConPerMon in the function manual mentioned at the outset, the standard deviation of the actual value, calculated in the monitoring module, can be used to calculate the dead band width.
Secondly, if the controlled variable is changed only gradually by quantizing the manipulated variable, for example, on account of pulse width modulation with a defined minimum pulse duration, on account of a step controller with a defined minimum step size or in the case of an electropneumatic position controller with static friction in the stuffing box of the pneumatic drive, then the width of the dead band depends on the manipulated variable quantization that should be multiplied by the respective process gain. For example, in the case of temperature control with manipulated variable quantification of 5% and a process gain of 1.5° C./%, only temperatures in a grid of5%·1.5° C./%=7.5° C.can be accurately achieved. The dead band must then be selected to be so wide that at least one grid point, at which the process can stay in a steady state, falls in the dead band. The limit D of the dead band should be set to be greater than approximately 3.8° C. in this example.
Although a certain reduction in the actuating interventions is already achieved with a dead band of constant width, some disadvantages must be accepted.
Firstly, control deviations that are smaller than the dead band are ignored by the controller, i.e., the controller does not correct these deviations even if the controller could do so without an upstream dead band. Therefore, steady states of the actual value of the controlled variable may be established, the temporal mean value of which deviates considerably from the desired value.
Secondly, if steady states are established in the edge regions of the dead band, then a control intervention may result again and again even with the slightest disturbances. This is because, after a disturbance event that results in the dead band being left, the controller returns the actual value of the controlled variable only to the respective edge of the dead band, which may result in new actuating interventions in the event of further disturbances. This increases the wear and energy consumption of the actuator.
Thirdly, large dead bands particularly have an adverse effect on the control behavior of the control loop in the event of sudden desired value changes. The reason for this is that the controller first of all "stops work", for example, in the rise phase of a positive step response when the control difference enters the dead band. This may result in a creeping stabilization process or in the controller only becoming active again when the actual value exceeds the upper limit of the dead band on account of an overshoot.
A dead band element connected upstream of the controller in a closed-loop control device can thus contribute, as is known, to reducing actuator movements and thus the energy consumption and the wear of the actuator. This applies, in particular, to mechanical actuators, such as valves and pumps. Furthermore, a dead band element is able to avoid sustained oscillations as an operating movement of an actuator, which are caused by the quantization of the actuating interventions, in the control loop.
However, use of an upstream dead band element has hitherto usually resulted in impairment of the control quality because the exact desired value is achieved only with an offset dependent on the dead band width and not by the mean value of the controlled variable, as when the dead band element is omitted. The offset of the controlled variable with respect to the exact desired value also results in the dead band actually selected for the purpose of reducing actuating interventions being left more frequently because the dead band is symmetrical around the desired value and not around the achieved actual value of the controlled variable. Upon leaving the dead band, the controller must again intervene to return the actual value to the region of the dead band again, with the result that the abovementioned advantages of a dead band can be achieved only to a lesser extent.
These problems result in dead band elements often being connected upstream of linear dynamic controllers only in those cases in which they are absolutely necessary and usually not in cases in which only the wear and energy consumption of a process system, in which the closed-loop control device is used, are intended to be reduced.


A shock absorbing structure for a motor vehicle including at least one main body which includes a top wall and two leg walls, wherein the distance between the leg walls in a direction in which they are opposed to each other gradually increases with an increase in a distance in a direction which is away from the top wall toward the distal portions, with an obtuse interior angle being formed at each of corners which are formed by the top wall and the respective two leg walls, the top wall and the leg walls are integrally formed of a synthetic resin material whose tensile elongation according to ASTM D638 is not less than 150%, an inner surface of each corner being provided by a concave curved surface having a radius of curvature of not less than 2.0 mm.

1. Field of the Invention
The present invention relates in general to a shock absorbing structure for a motor vehicle and a shock absorbing assembly including the same. More particularly, the invention relates to an improved shock absorbing structure disposed in an installation space defined by and between a vehicle component and a vehicle body, and a shock absorbing assembly wherein the shock absorbing structure is advantageously installed or mounted on the vehicle component.
2. Discussion of Related Art
Conventionally, a shock absorbing structure for absorbing impact energy is provided or disposed between various components of a motor vehicle or other motor vehicle and a body of the vehicle. The shock absorbing structure disposed as described above is arranged to be deformed for absorbing a shock or impact generated by contact of a passenger or driver of a vehicle (hereinafter referred to as "vehicle passenger") or a pedestrian with the vehicle component in the event of a collision of the vehicle from an accident, thereby assuring improved safety of the vehicle passenger or the pedestrian.
There are known various types of shock absorbing structure having various shock absorbing characteristics. Among various types of shock absorbing structure, a suitable one is selected so as to satisfy the conditions for installing the shock absorbing structure between the vehicle component and the vehicle body, the shock absorbing characteristics required by the vehicle component, etc.
There is known a shock absorbing structure disposed in a considerably narrow or small installation space having a size of not greater than about 20 mm, such as a space defined by and between a roof reinforcement located over a front pillar and a ceiling interior member of a vehicle, which space is considerably narrower or smaller than the other space defined by and between the vehicle body and the vehicle components other than the ceiling interior member. One example of such a shock absorbing structure includes a planar rectangular top wall portion to which the shock is applied and two planar leg walls formed integrally with the top wall portion such that the two leg walls respectively extend from opposite two side edges of the top wall portion so as to be opposed to each other, toward one of opposite sides of the top wall portion as seen in a direction of thickness thereof. The known shock absorbing structure is formed of a thin steel plate and has a generally U-shape in cross section.
The above-described shock absorbing structure formed of the steel plate and having the U-shaped cross sectional shape is generally disposed in a space between the roof reinforcement and the ceiling interior member of the vehicle, such that the two leg walls extend in a direction in which the roof reinforcement and the ceiling interior member are opposed to each other. In other words, the shock absorbing structure described above is disposed in the space such that the two leg walls extend in a direction in which the shock is applied from an external to the ceiling interior member. With the shock absorbing structure being thus disposed in the space, when the shock is applied to the shock absorbing structure by contact of the vehicle passenger with the ceiling interior member in the event of a collision from an accident, for instance, the distal portions of the two leg walls slide on the ceiling interior member or the roof reinforcement so as to be displaced away from each other. Thus, the two leg walls are deformed so as to be displaced away from each other such that a rate of increase in a distance between the two leg walls in a direction in which the two leg walls are opposed to each other gradually increases with an increase in a distance in a direction which is perpendicular to that direction and which is away from the top wall portion toward the distal portions of the leg walls, for thereby absorbing the impact energy. (The deformation described above is referred to as "opening deformation".)
In the meantime, in a shock absorbing structure having cylindrical members made of resin, a shock absorbing structure in which a plurality of resin-made ribs are arranged in lattice on a base plate, or a shock absorbing structure formed of resin foamed body, for instance, an entirety or a portion of each shock absorbing structure is subjected to buckling deformation or collapsing deformation for absorbing the impact energy. In contrast, in the above-described shock absorbing structure formed of the steel plate and having the U-shape in cross section, it is less likely that deformed portions are superposed on each other, so that the height of the structure after deformation can be made sufficiently small. Accordingly, even if the height of the shock absorbing structure before deformation is made small so as to correspond to a size of a small or narrow installation space in which the structure is to be disposed, an effective stroke index of the structure, i.e., a ratio of an amount of deformation of the shock absorbing structure by application of the shock thereto to the height of the shock absorbing structure before deformation, can be made sufficiently large, so that the shock absorbing structure exhibits excellent shock absorbing capability with high reliability.
However, the above-described shock absorbing structure formed of the steel plate and having the U-shape in cross section is generally attached to the vehicle body at local points thereof by spot welding, screw-fastening, etc. Accordingly, the shock absorbing structure when disposed in the space between the vehicle component and the vehicle body inevitably suffers from a variation in its shock absorbing characteristics at different portions thereof depending upon whether the portions are fixed to the vehicle body or not.
In the meantime, there is conventionally known a shock absorbing structure, as disclosed in JP-A-2000-211454, which includes resin main bodies each having a generally U-shape in cross section and including a top wall and two leg walls which are formed integrally with each other by using a synthetic resin material. In such a shock absorbing structure formed of resin, an entirety of one of opposite major surfaces of the top wall is bonded to the vehicle component or the vehicle body, for instance. Alternatively, where the vehicle component is made of a synthetic resin material, the entirety of one of opposite major surfaces of the top wall and a portion of the vehicle component corresponding to the top wall are welded together, so that the resin shock absorbing structure is attached to the vehicle component or the vehicle body at local areas thereof by a so-called welding operation. Accordingly, the shock absorbing structure bonded to the vehicle component or the vehicle body at local areas thereof does not suffer from the above-described problem of variation of the shock absorbing characteristics experienced in a case where the conventional shock absorbing structure formed of the steel plate and having the U-shape in cross section is fixed to the vehicle body at local points thereof.
The shock absorbing structure which includes the resin main bodies having the U-shape in cross section and which is disclosed in the above-described Publication, however, is adapted to absorb the impact energy such that the leg walls are subjected to buckling deformation upon application of the shock to the structure from the external. Accordingly, the disclosed shock absorbing structure does not have the effective stroke index as large as that in the above-described shock absorbing structure formed of the steel plate and having the U-shape in cross section. The shock absorbing structure disclosed in the Publication exhibits a sufficiently high degree of shock absorbing capability if it is disposed in an installation space having a certain degree of size. The disclosed shock absorbing structure, however, inevitably suffers from insufficient shock absorbing capability if it is disposed, in its known structure without any modification, in a considerably small or narrow installation space between the vehicle component and the vehicle body, in place of the above-described shock absorbing structure formed of the steel plate and having the U-shape in cross section.
It might be considered possible, for instance, that the configuration of the resin main body is modified such that the two leg walls are not subjected to the buckling deformation, but subjected to the above-described opening deformation upon application of the shock to the resin main body, in other words, the two leg walls are deformed such that a rate of increase in a distance between the two leg walls as measured in a direction in which they are opposed to each other gradually increases with an increase in a distance as measured in a direction which is perpendicular to that direction and which is away from the top wall toward distal portions of the leg walls, for the purpose of improving the shock absorbing capability exhibited when the resin shock absorbing structure having the resin main bodies is disposed in the considerably narrow or small space.
Even if the leg walls are arranged to be subjected to the opening deformation described above by optimizing the configuration of the resin main body, the resin shock absorbing structure may undergo stress concentration at corners formed by the top wall and the leg walls when the leg walls are subjected to the opening deformation, so that there may be generated cracking or fracture at the corners, causing a risk that the shock absorbing structure is not capable of absorbing a desired amount of impact energy.

Shock absorbing structure for motor vehicle and shock absorbing assembly including the same


Methods, systems and apparatus for monitoring the state of a reticle by providing a reticle having a device exposure region in an imaging tool, defining one or more image fields across the device exposure region, and transmitting energy through the device exposure region. A detector detects the energy in the image field(s) at one or more testing intervals and a system control generates a transmission profile of average energy transmissions for each image field. Using this transmission profile, the state of the reticle is then determined at each testing interval followed by taking action based on the reticle state. The state of the reticle identifies whether the device exposure region has been deleteriously degraded, and as such, the reticle is no longer suitable for use. This is accomplished by determining if any average energy transmission of any image field across the reticle exceeds an allowable energy transmission threshold.

1. Field of the Invention
The present invention relates generally to the manufacture of integrated circuits and, in particular, to detecting and monitoring transmission degradation of reticles used in lithographic production systems.
2. Description of Related Art
In the semiconductor industry, photolithography systems are used to transfer patterns or shapes from a reticle (i.e., photomask) to a semiconductor wafer. These patterns may be transferred a number of times across the wafer to form microelectronic circuits or other semiconductor device features.
In a typical photolithographic process, a thin layer of a photosensitive material (e.g., photo resist) is deposited over a semiconductor wafer, which may have many chips on a surface thereof. The reticle is made from a transparent plate often comprising glass, quartz, or the like. The reticle includes a device exposure region and a patterned opaque region typically comprising a chrome layer or region. The opaque pattern on the reticle represents a desired layout of a circuit or semiconductor feature.
During the photolithography process, the patterned reticle is illuminated with radiation (e.g., laser radiation or radiation from an arc lamp) in the exposure region. The reticle exposure region generally has a square or rectangular shape and is positioned in the center of the reticle. It includes both the transparent portions and opaque portions that together define the device pattern. In illuminating this exposure region, a portion of the radiation is allowed to pass through the transparent portions, while the opaque portions block another portion of the radiation. A projection lens having an image field of a given size collects the radiation that is passed through the transparent portions, and projects the reticle pattern onto the photo resist layer. This pattern creates exposed and unexposed regions on the chip(s) residing on the wafer surface, whereby the exposed regions are then removed to define the desired circuit layout on the wafer. The photolithographic process of transferring images from a patterned reticle onto a wafer may be repeated many times across the same chip on the wafer, on different chips on the wafer, or even on several chips across different lots of wafers.
In transferring the image patterns, a single patterned reticle may be repeatedly used to transfer numerous images onto the chip(s) residing across the wafer(s). However, over time and use of the reticle degradation gradually occurs to the reticle's device exposure regions. Conventional approaches aimed at solving this problem include monitoring the patterns transferred on the wafers. In these approaches any unacceptable deviations amongst the patterns transferred onto the wafer indicate that the reticle is no longer suitable for use in lithography. However, these methods are time consuming since many locations must be monitored across the wafer for detecting any such deviations. They are also costly since the deviations are not detected until the images are transferred onto the wafers, thereby leading to increased wafer scrap and decreased production yields.
Other approaches aimed at determining whether acceptable images are being transferred onto a wafer include the use of test reticles to monitor deviations, the use of metrology tools to measure and control the characteristics of the patterns formed on the wafer by adjusting the lithographic processing conditions, as well as manually inspecting both the reticle patterns and the transferred images to ensure that the transferred images are within acceptable parameters of the desired layout specifications. However, all of these approaches are time consuming, inefficient, expensive and increase scrap materials, which in turn, lead to decreased production yields.
Accordingly, a need continues to exist in the art for easily and efficiently detecting and monitoring transmission degradation of reticles used in photolithography production systems.

Test method for determining reticle transmission stability

International Business Machines Corporation


An apparatus synthesizes the image of a viewer and a second image into a synthesized image and displays the synthesized image. The apparatus is capable of aligning the line of sight of the viewer with the line of sight of the displayed image of the viewer and correctly reproducing colors on the synthesized image. The apparatus has a transparent hologram screen (15) on which a diffuser is recorded, a camera (25) for imaging a viewer (81) through the hologram screen, a synthesizer (28) for synthesizing the image of the viewer and a second image into a synthesized image, and a projector (11) for projecting signal light (31) containing the synthesized image onto the hologram screen. In place of the synthesizer, a display unit may be arranged behind the viewer. The hologram screen (15) may be combined with a mirror or a half-mirror.

1. Field of the Invention
The present invention relates to an apparatus for synthesizing the image of a viewer and a second image into a synthesized image and displaying the synthesized image.
2. Description of the Related Art
There is an apparatus that images the face or body of a viewer, synthesizes the imaged image and a second image into a synthesized image, and displays the synthesized image. The apparatus synthesizes, for example, the face of a viewer and a hairstyle or clothes into a synthesized image and displays the synthesized image so that the viewer may see his own image with the hairstyle or clothes. This apparatus helps customers of barbershops or clothing stores make correct choices, thereby promoting the sales in the stores.
One problem of this apparatus is that the line of sight of the viewer watching the displayed image of its own does not agree with the line of sight of the displayed image because the camera that images the viewer is not in the line of sight of the viewer. As a result, the viewer has an unpleasant feeling when seeing his own image displayed on the apparatus.
To solve this problem, Japanese Unexamined Patent Publication No. 5-328336 discloses an apparatus employing a transparent hologram element. The hologram element reflects and diffracts light coming along the line of sight of a viewer, and a camera images the reflected and diffracted light the hologram element provides.
The hologram element of this disclosure, however, has a wavelength selectivity area to hinder faithful color imaging and correct color reproduction.

Apparatus for synthesizing and displaying images


An arrangement for shadow-casting lithography by focusing electrically charged particles for the purpose of imaging structures of a mask on a substrate disposed immediately to the rear thereof, comprising a particle source (2) and an extraction system (3) which produces a divergent particle beam issuing from a substantially point-shaped virtual source, and comprising a lens (6) for focusing the divergent particle beam which comprises an electrode arrangement (6a, 6b, 6c, 6d, 6e, 6f, 6g, 6h) which includes at least one electrostatic collector lens (6a to 6f in conjunction with an electrostatic diverging lens (6g, 6h) in order to be able to compensate lens errors of the collector lens in a purposeful manner with respect to lens errors of the diverging lens and to render possible a predeterminable change in the imaging scale. The diverging lens is preferably disposed in the beam direction at a distance to the rear of the collector lens in immediate proximity of the mask in order to be able to use the mask as a grating for the diverging lens.

1. Field of the Invention
The present invention relates to an arrangement for shadow-casting lithography by means of electrically charged particles for the purpose of imaging structures of a mask on a substrate disposed immediately to the rear thereof, comprising a substantially point-shaped particle source and an extraction system, which produces a divergent particle beam issuing from a substantially point-shaped virtual source and comprising a means for focusing the divergent particle beam to form an at least almost parallel particle beam for the purpose of illuminating the mask and the substrate.
2. Description of the Prior Art
A lithography system of this type is disclosed for example in U.S. Pat. No. 4,757,208, which describes a system for ion lithography by means of shadow-casting projection, conventionally referred to as MIBL (--Masked Ion Broad Beam Lithography/Masked ion Beam Lithography). In this system a hydrogen or helium ion source is provided with an extraction system which comprises a magnetic sector field for the purpose of mass filtering the particles which are issuing from the source. Located in the beam direction at the rear of the sector field is an electrostatic collector lens which is constructed from two coaxial tubes, which lens collects the particle beam in a so-called crossover to form an image point of the source. This crossover lies in the object-side focal plane of a second collector lens which is likewise constructed from two coaxial tubes and which forms the above mentioned means for focusing the divergent particle beam to form a parallel beam. This parallel beam irradiates a lithography mask which is disposed directly above a substrate so that it is possible to image the structure of the mask directly on this substrate.
A further system of this type is described in the periodical Optik Optics! Vol. 51, Book 5, in an article entitled "Lithium-ion-beam exposure of PMMA layers without proximity-effect" by R. Speidel and U. Behringer in 1979. In the case of this known system instead of lenses comprising two coaxial tubes, two individual lenses are provided which are formed in each case from three coaxial ring electrodes. The individual lens disposed on the mask or wafer-side forms the means for focusing the divergent particle beam to form a parallel beam.
The solution achievable by means of such a known system is dependent upon several factors, namely upon the energy unsharpness of the particles issuing from the source and upon the virtual source size, i.e. upon the narrowest diameter of the region from which the particles from the source visibly originate. Furthermore, the quality of the imaging is limited by the imaging error of the collector lenses, in particular of the second lens used to produce the parallel beam. If the particle beam is not exactly parallel, or rather is slightly convergent or divergent, in addition the inaccuracy of the distance between the mask and the substrate appears as an imaging error. Further contributory factors are also the deviations from flatness of the substrate or the mask.
The Austrian application A 259/95 of the applicant dated 13.2.1995 describes a special lens assembly for the purpose of producing an almost parallel beam which is characterised by particularly few imaging errors. In the case of this arrangement a plurality of coaxially disposed ring electrodes are provided in sequence and their potentials are such that a constant accelerating field is formed at least in sections within the beam cross-section in the beam direction. If a divergent beam of charged particles is now directed into this accelerating field, then the individual particle paths are deflected, by virtue of the accelerating effect of this field, onto a parabolic path, wherein after travelling over a certain distance an almost parallel beam is produced, which can be used to image structures of a mask onto a substrate.

Arrangement for shadow-casting lithography

Ims-Ionen Mikrofabrikations Systems BMGH


A plasma processing apparatus includes a barrier wall member disposed between a plasma generation chamber and a processing chamber to separate the plasma generation chamber from the processing chamber. The barrier wall member assumes a fin structure achieved by disposing in a radial pattern numerous plate-like fin members extending from a central area thereof toward a peripheral edge. An upper end portion of each fin member overlaps a lower end portion of an adjacent fin member. The fin members are disposed with gaps formed between them and are made to range upward with a tilt along the circumferential direction.

During a manufacturing process for manufacturing, for instance, semiconductor devices, a specific film formed on a processing target substrate such as a semiconductor wafer (hereafter may be simply referred to as a "wafer") is selectively etched and removed by using a resist film formed at the surface of the wafer as a mask and then the resist film is removed through ashing. During the ashing process, oxygen radicals generated by exciting an oxygen-containing gas to a plasma state are used in the related art. As semiconductor elements today need to assume a multilayer structure with a greater number of wiring layers stacked one on top of another, a low dielectric constant film with a low dielectric constant, such as a low-k film, is frequently used as an insulating film in the multilayer wiring structure. Since such a low dielectric constant insulating film is readily damaged by oxygen radicals, hydrogen radicals with which damage can be more successfully inhibited are utilized when etching or ashing the low dielectric constant insulating film.
The plasma processing apparatuses that process wafers with radicals in the related art include those adopting a structure equipped with a plasma generation chamber where plasma is generated by exciting a processing gas and a processing chamber communicating with the plasma generation chamber (see, for instance, patent reference literatures 1 and 2 listed below). Since ions that are sure to damage films on a wafer are formed, in addition to radicals, from the plasma generated in the plasma generation chamber, a barrier wall member via which ions traveling from the plasma generation chamber toward the processing chamber are trapped but radicals are allowed to pass through is disposed between the plasma generation chamber and the processing chamber, in order to process the wafer with the radicals while minimizing damage to the wafer.
The barrier wall member in the related art is constituted with a single barrier wall plate with through holes formed therein, which is disposed with a horizontal orientation. However, at the barrier wall member constituted with a single barrier wall plate, the through holes formed to let through the radicals are unblocked, giving rise to a concern that ultraviolet light (including vacuum ultraviolet light) generated as the processing gas is raised to plasma in the plasma generation chamber may be transmitted through the through holes. If the ultraviolet light is transmitted through the through holes and is directly radiated over the surface of the wafer, films deposited upon the wafer may become damaged and accordingly, the wafer needs to be shielded from the ultraviolet light. For instance, if a low-k film is formed on the wafer, the Si—C bond in the low-k film is broken by the ultraviolet light, allowing carbon to separate, which will result in an increase in the dielectric constant of the film. In addition, the low-k film will be rendered more hydrophilic and the water content in the film will increase to result in a decrease in the mechanical strength of the film.
These issues may be addressed as disclosed in patent reference literature 1 listed below by constituting the barrier wall member with two barrier wall plates disposed with a horizontal orientation, which are stacked one on top of the other with a clearance formed between them and by setting the through holes formed at the individual barrier wall plates with an offset, so as to disallow transmission of ultraviolet light.
There is an issue yet to be addressed with regard to a barrier wall member constituted with a barrier wall plate disposed with a horizontal orientation as described earlier, in that since radicals collide with the surface of the barrier wall plate substantially at a right angle to the surface and thus tend to become lost after the collision, they cannot pass through the barrier wall plate with a high level of efficiency. Since such a reduction in the quantity of radicals passing through the barrier wall plate is bound to result in a decrease in the quantity of radicals that actually reach the wafer, the processing rate at which the wafer is processed with the radicals, e.g., the etching rate, the ashing rate or the film formation rate, will be lowered.
While the quantity of radicals passing through a barrier wall member constituted with a single barrier wall plate may be increased by forming a greater number of through holes or by forming larger through holes, ultraviolet light will be transmitted readily through such through holes. In addition, while the passage of ultraviolet light can be prevented more effectively with a barrier wall member constituted with a plurality of barrier wall plates, a significant quantity of radicals is likely to be lost through collisions, as, for instance, radicals having passed through the through holes at a barrier wall plate collide with the surface of another barrier wall plate located under the first barrier wall plate.
There is another concern in that the ease with which the gas flows as it passes through a barrier wall plate disposed with a horizontal orientation and having through holes formed therein, i.e., the conduction of gas, cannot be readily adjusted. For instance, as the processing gas flows at a higher flow rate, the flow velocity over a central area of the barrier wall plate will become higher than the flow velocity at the periphery of the barrier wall plate and the overall flow velocity distribution will assume a substantially parabolic curve. Under such circumstances, the radicals having reached the wafer will be distributed in different quantities at the central area and the peripheral area, which is bound to compromise the in-plane uniformity of the wafer processing. For these reasons, it is desirable to adjust the flow velocity of the gas passing through the barrier wall plate by adjusting the conduction at the barrier wall plate.
The conduction at the barrier wall plate may be adjusted by altering the quantity or size of the through holes. However, it is not easy to determine the optimal quantity or size of through holes for achieving the desired gas flow velocity distribution and thus, the conduction cannot easily be fine-adjusted. In addition, such a change in the quantity or size of through holes will necessitate replacement of the barrier wall plate itself. In short, conduction adjustment generally requires a great deal of attention and labor.    (patent reference literature 1) Japanese Laid Open Patent Publication No. 2006-073722    (patent reference literature 2) Japanese Laid Open Patent Publication No. 2002-083803


A lighting system including lamps mounted to best illuminate the interior of the cabinet enclosure. The lighting system shall incorporate normally closed switches mounted in proximity to the cabinet door. The lamps are illuminated when the cabinet door is opened, closing the electrical circuit and the lamps are extinguished when the cabinet door is closed, opening the electrical circuit. The lamps and switches are connected to a step-down transformer by means of electrical wire using crimp connectors. The step-down transformer converts standard house hold electrical voltage 120 VAC, to a voltage below 14 VAC. The step-down transformer power source may be replaced by a battery power source.

1. Field of Invention
This invention relates generally to automatic lighting systems and more particularly to a lighting system readily installed in cabinets and closets. The light or lights are illuminated when the door is opened and extinguished when the door is closed.
Storage cabinets in the home frequently contain various cleaning solvents, cooking oils, insecticides, pesticides, and beverages in close proximity to each other. Serious personal injuries and even deaths of persons have been recorded as the result of picking an unintended item from a storage area.
Standard storage cabinets, found in homes, offices, and factories are not supplied with lighting devices of any type.
The main reason being that a safe, practical, effective cabinet lighting devices have not been previously developed, or offered to the storage cabinet industry, nor to the the general public for aftermarket installation.
Automatic lighting by opening the door, of home appliances such as refrigerators and ovens, has been used for many years. Home appliance lighting utilizes line voltage 120 Volt Alternating Current, at 60 Hz.
Automobile interiors are also lighted automatically upon opening of the doors. Automotive electrical circuits normally utilize 12 Volt, Direct Current.
Line voltage lighting, induces several undesirable characteristics to cabinets, high bulb temperatures, that can be a fire ignition point. The danger of serious electrical shock, when applied to metal cabinets, and the difficulty of installation by persons of nominal mechanical skills, to meet electrical codes.
Most house holds in the U.S. are powered by 120 VAC, 60 Hz. circuits, to utilize 12 VDC in household applications requires a conversion unit of some type, such as a rectifer, inducing unnecessary added cost and the risk of electrical shock, to the purposed lighting system. A low voltage power supply, consisting of a step-down transformer reduces the risk of dangerous electrical shock. The power supply can be internally or externally fused to provide maximum safety to users and electrical components.
A battery pack, consisting of Wet or Dry cells may be substituted for the step-down transformer. Some battery powered cabinet lights have been utilized for cabinet lighting in the past.
2. Description of the Prior Art
J. S. Patton, was granted a U.S. Pat. No. 1,532,935 for a device for Electrically Illuminating Card Cabinets.
From the description given in the the patent, the device has several features that would make the device both a fire and electrical hazzard. i.e. A paper reflector to direct the light beam or pattern. Line voltage to exposed metal to metal contact switch. The system as described is not an easy aftermarket installation.
VandenHoek et al., U.S. Pat. No. 4,203,639 describes a method of distributing electrical power in a hard wired, bolt on system for movable room dividers. This system is an important safety and cost improvement over flush floor mounted, line voltage recepticals. The system as described, could best be installed by a qualified electrician.
Squitieri, U.S. Pat. No. 5,205,638 describes a system for illuminating merchandise in shelves by Back lighting, utilizing small florescent tubes. This is an improvement over incandescent lamps and their inherent problems of electrical consumption, heat and related fire hazzards. This system as described, uses line voltage by means of a plug to a wall out let or extension cord and pertains to display shelves. The system as described is for as built shelf system, not applicable to aftermarket installations, without major alterations to the existing shelves.
A cabinet lighting unit that is currently marketed under U.S. Pat. No. 5,032,957 Canfield; incorporates the switch, power supply, lamp, and reflector in one unit.
This limits the lighting units mounting capabilities to places where a shelf, cabinet wall or ceiling is in close proximity to the door. The light pattern or beam is limited by the mounting position. This system is not readily adaptable to powering more lamps than the one enclosed in its body.
A second cabinet lighting system, U.S. Pat. No. 5,580,155 Hildebrand et al., describes a lighting unit that incorporates the switch, lamp and reflector in one unit. The power supply being located at a remote location. The switch/lighting unit as described, attached to an interior cabinet wall in proximity to the cabinet door. The light pattern or beam is also limited by the mounting position of the switch/lighting unit. This invention does not describe controlling more than one switch/lighting unit in either cabinets or closets.
Kitchen and bathroom cabinets are typically of a standard design for width, depth and height. The under sink cabinets sold for kitchens are based on a standard sink size. A high percentage of these cabinets, 97% are of a double door design.
Only the sides of the cabinets provide walls on which to mount either of the afore mentioned switch/lighting systems. None of the afore mentioned cabinets offers a ceiling, the space being filled with either drawers or plumbing devices. Blind kitchen corner cabinets are generally the largest found in a typical home. Some measure as large as 48" wide, and 24" deep, containing 1.backslash.3 or 1.backslash.2 depth shelves running the full width. Corner cabinets generally offer a drawer in the upper portion, below the counter top. The typical blind corner cabinet offers only one wall to accommodate a switch/lamp assembly.
Modern kitchen lighting systems offer excellent counter top and general lighting, but with less than 25% of a floor mounted cabinet space being adaquately illuminated to readily identify objects within the cabinet. Personal experience indicates that when searching for items stored in the cabinets, a shadow is cast into the cabinet, further reducing the available light within the cabinet.
The previously mentioned switch/lamp assemblies do not completely solve the the existing double door bathroom or kitchen sink lighting problems without adding a mounting system. Nor do they provide for additional lamps that might be required for sufficient lighting in large or multi shelved cabinets or closets.
More switch/lamp assemblies could be added if a mounting surface is available, which could induce unnecessary cost and reduce available storage space. No provision is provided for the adjustment of the light pattern or beam to optimize the use of the available light. The lighting systems do not address how they might be adapted to other types of doors in common use, such as pocket or center hinged doors used where space is at a premium.
The previously mentioned lighting systems solve some problems of lighting the interior of cabinets and closets. There is an obvious need for a flexible, cost and space efficient, nonintrusive lighting system, that can solve many other enclosure lighting problems.

Automatic low voltage lighting system for cabinets and closets


If the temperature of a fixing unit is not stable when automatic gradation correction is performed, an error occurs in gradation correction when a chart for gradation measurement is output. An image forming apparatus of the present invention is characterized by including a unit configured to transfer a toner image based on image data onto a sheet, to pass the sheet through a fixing unit, and to output a first chart, a unit configured to create a conversion table for gradation correction using a value obtained by reading the output first chart, and a stabilization processing unit configured to stabilize the fixing unit by outputting a second chart before outputting the first chart when creation of the conversion table for gradation correction is instructed, wherein the stabilization processing unit outputs the second chart in a number of sheets specified in advance by a user.

1. Field of the Invention
The present invention relates to an image forming apparatus and a method for image forming and a program thereof and, particularly, to gradation correction when forming an image.
2. Description of the Related Art
The mainstream of the recent copy machine is a digital copy machine that performs digital processing on image data generated by reading a document with a scanner unit, transfers the image data to a printer unit, and prints the transferred image data. In the copy machine with such a configuration, if the gradation property of the image data generated by the scanner unit and the gradation property when output to a sheet in the printer unit are not adjusted, the gradation property in the duplicated document will be lost as a result. In view of this, various automatic gradation correction functions are proposed which adjust the gradation property in a duplicated document to be output when the document is duplicated.
The automatic gradation correction function is explained with reference to FIGS. 4 and 5. First, an image A 510 is created as a gradation measurement chart by a controller 501 of a copy machine and is stored in a memory within the controller 501 (steps 401 to 403). Then, the image A 510 stored in the memory is transferred to a printer unit 503 connected to the controller 501 and printed in the printer unit 503 and a printed document A 512 is output (step 404).
Next, the printed document A 512 is read by a scanner unit 504 connected to the controller 501 and an image A′ 511 that is obtained is accumulated in the memory (steps 405 to 407). At this time, it may also be possible to accumulate predetermined target data in the memory in place of the image A′ 511. The image A 510 and the image A′ 511 (or target data) saved in the memory within the controller 501 are compared, and thus gradation difference data is calculated (step 408). Each process of steps 403 to 408 is repeated several times (step 409), and thereby a conversion table for gradation correction used at the time of output to the printer unit 503 is obtained (step 410).
The image data read by the scanner unit is converted by use of the gradation correction conversion table created in this manner, which makes it possible to reproduce the gradation of the original document when printing is performed in the printer unit 503. As the automatic gradation correction function, in addition to the method described above, there is a correction method that takes into consideration the difference between sheets used at the time of printing and such an automatic gradation correction function is described in Japanese Patent Laid-Open No. 2001-119594.
The above-described automatic gradation correction is based on the premise that printed matter is always output with the same printing characteristic when image data is printed in the printer unit. However, in general, the printing characteristic of the printer unit varies depending on the number of printed sheets and the printing interval and also varies depending on the use environment. As a result, there is a case where a variation in density occurs between the first several sheets and the several subsequent sheets of the printed matter. The reason is that the fixing temperature, when printing is performed in the printer unit, varies depending on the weather condition of the installation position, the printing time, etc., and therefore, it is no longer possible to perform gradation correction accurately. Consequently, in order to perform gradation correction more accurately, it is desirable to perform printing in a state in which variation in density due to the variation in the fixing temperature is suppressed.

Image forming apparatus and method for performing gradation correction in an image forming apparatus and program


Soils are decontaminated in situ by transporting peroxysulfate ions through the soil under the influence of an electric field. The electric field is maintained between one or more anodes and one or more cathodes inserted directly into the contaminated soil and geometrically disposed relative one to the other to take full advantage of a positively biased DC voltage applied between said one or more anodes and one or more cathodes. An aqueous solution of a strong oxidant, either peroxymonosulfate or peroxydisulfate, is added to the contaminated soil. The electric field induces the movement of peroxysulfate ions principally by electromigration and to a lesser extent by electroosmosis. Organic contaminants in the soil are oxidized by the peroxysulfate ions. For very recalcitrant contaminants, electric field-induced heating of the soil produces sulfate radical anions. In most cases the peroxysulfate ions or sulfate radical anions oxidize the contaminants to carbon dioxide and mineral acids. The decontamination occurs in the subsurface and does not require the mobilization of the contaminant. Products of the reaction, such as sulfate, are removed from the soil by continued electromigration and collection at the electrode(s).

1. Field of the Invention
The present invention relates to the in situ decontamination of soils using electric fields to transport strong oxidants, preferably peroxymonosulfate or peroxydisulfate, through the soil. In the practice of this invention, it has been found that the oxidant effects degradation of the contaminant in situ without effecting the mobilization of the contaminant and that the electric field ensures both transport and complete mixing of the oxidant and the contaminant as well as subsequent extraction of the resulting reaction products from the soil.
2. Description of the Prior Art
Peroxymonosulfate (HSO.sub.5.sup.-) and peroxydisulfate (S.sub.2 O.sub.8.sup.2-) are strong oxidants capable of degrading most organic compounds. Peroxymonosulfate is an effective oxidizing agent with a redox potential similar to hydrogen peroxide. It is more stable, easier to store and handle than H.sub.2 O.sub.2. Peroxydisulfate is an even stronger oxidizing agent than HSO.sub.5.sup.- and H.sub.2 O.sub.2. Both peroxysulfate compounds can be activated by contact with metal ions or by exposure to light to generate sulfate radical anions. The sulfate radical anions are sufficiently strong oxidizing agents to mineralize nearly all organic compounds (convert to carbon dioxide and mineral acids). Unlike hydrogen peroxide or peroxymonosulfate, peroxydisulfate can also generate sulfate radical anions upon the heating thereof. These peroxysulfate compounds are ideally suited for in situ soil remediation because they are water soluble and do not require light activation or the addition and mixing of multiple reagents. They are relatively inexpensive, and are easily handled, stored, and transported.
Peroxymonosulfate has heretofore been used to decontaminate aqueous waste streams containing contaminants such as cyanides, phenols, and lignin. The light catalyzed degradation of organic compounds with peroxydisulfate was mentioned in German Patent DE4330518A1, Blaschke et al, March 1995. Peroxydisulfate has been used in total organic carbon monitors due to its ability to convert virtually all organic matter to CO.sub.2 as detailed in G. R. Peyton, Mar. Chem., 1993, 41, 91. These disclosures demonstrate the ability of peroxysulfate compounds to destroy organic contaminants, but all of the oxidations are carried out in aqueous solutions. Accordingly, the use of peroxysulfate compounds in soil remediation applications is not intuitive since these oxidants would be expected to react nonspecifically with the soil and soil organic matter as well as the target contaminants. Furthermore, the use of peroxysulfate compounds would be expected to be limited to ex situ soil remediation due to limitations of mixing the aqueous treatment solutions in undisturbed soils contaminated with hydrophobic organic contaminants. In the case of peroxydisulfate oxidation of recalcitrant contaminants, the requirements of light-, metal-, or heat-activation to generate sulfate radical anions would seem to make in situ soil remediation all but completely impractical. Nonetheless, these limitations are overcome in the practice of the instant invention due to the unexpected specificity of the peroxysulfate compounds for oxidation of the organic contaminants and the ability of electric fields to generate heat and move the oxidants through low permeability soils.
A problem encountered when using aqueous solutions for the treatment of soils is a matrix effect in which the aqueous solution channels around the contaminated soil particles instead of flowing through them. Soils have an inhomogeneous distribution of microscopic and macroscopic pores. With time, hydrophobic organic molecules penetrate into the microscopic pore space of the soil and partition into hydrophobic soil organic matter (Luthy et al. Environ. Sci. Technol. 1994, 28(6), pp. 266A-276A; Readman et al. Sci. Total Environ. 1987, 66, pp. 73-94). Water added to the soil, either as a washing solution or a solvent for reactants, is repelled by these hydrophobic regions. Additionally, the wash solution takes the path of least resistance and percolates through the macroscopic pores and channels. The basic problem, then, is that the microscopic pores which contain residual amounts of the contaminants are inaccessible to the reagents added for remediation (Di Toro et al., Environ. Sci. Technol. 1982, 16, pp. 594-602; Carroll et al., Environ. Sci. Technol. 1994, 28, pp. 253-258). In order to remediate contaminated soils, a method of obtaining access to the microscopic pore space in the soil is required.
Electrokinetics is considered the only in situ remediation technology that is able to effect access to the microscopic pores of the soil (Trombly, Environ. Sci. Technol., 1994, 28(6), pp. 288A-291A.). In this technique, electrodes are inserted directly into the soil. The resultant electric field is evenly distributed within the soil and is insensitive to pore size (R. F. Probstein, R. E. Hicks, Science 1993, 260, 498.). The resultant electrokinetically-induced movement of ions and pore fluid through soil is relatively insensitive to pore size, so preferential channeling through the largest soil pores is avoided.
Electrokinetic phenomena within the soil are the result of three electric field-induced processes. The first process is electrophoresis, in which ionic colloids move toward the oppositely charged electrode. This process makes only minor contributions toward the total mass flux in consolidated soils. The second electric field induced process, electroosmosis, is of greater importance. The electroosmotic flow of pore fluid is the result of the electric field-induced movement of ions within the double layer formed at the interface of charged porous particles, such as clays, and ionic solutions. The movement of the electrified double layer draws bulk pore fluid along by viscous drag. In soils of high clay content (containing typically negatively charged clays) electroosmosis creates a net movement of pore fluid toward the cathodic electrode. The third of these three electrokinetic processes is electromigration. Electromigration involves the movement of soluble ions within the pore fluid toward the oppositely charged electrode. Generally, electromigration will be the dominant component of the total electric field-induced mass flux within the soil.
The relative contribution of electromigration and electroosmosis to the total mass flux in the soil is determined by the ratio of effective ionic mobilities to the electroosmotic permeability of the soil (Y. B. Acar and A. N. Alshabkeh, Environ. Sci. Technol., 1993, 27, 2638.). The effective ionic mobilities are constant for individual ionic species and are not dependent on soil pH or conductivity. The electroosmotic permeability, however, is dependent on the soil zeta potential and conductivity, and is therefore effected by pH changes and reactions occurring in the soil during electroremediation. The effective ionic mobilities of species in soils have typically been found experimentally to be 10 to 300 times greater than electroosmotic permeabilities. In other words, the contribution of electromigration to the total mass flux across electrified soils is substantially larger than the contribution from electroosmosis. In addition, electroosmosis creates an acid front that sweeps across the soil, and the relative contribution from electromigration would be expected to further increase in dominance as the soil becomes more acidic and conductive as the electroremediation process proceeds.
Conventional electrokinetic remediation technologies seek to extract contaminants from the soil using electroosmosis. The movement of pore water under the influence of the electric field removes soluble contaminants from microscopic pore space. Collopy, U.S. Pat. No. 2,831,804, April 1958, details the electroosmotic removal of salts from agricultural soils. Probstein et al., U.S. Pat. No. 5,074,986, December 1991; Acar et al., U.S. Pat. No. 5,137,608, August 1992; and Pool, U.S. Pat. No. 5,433,829, July 1995, detail methods for extracting metal contaminants from soils using electroosmosis. Kim et al., U.S. Pat. No. 5,098,538, March 1992, detail a method for removing metallic contaminants from soils using both electroosmosis and acoustic energy. The use of these technologies is limited to fairly soluble contaminants. Chang et al., U.S. Pat. No. 5,240,570, August 1993, detail the use of electroosmosis and surfactants to extract polychlorinated biphenyls from the soil. This technology can extract organic contaminants of low aqueous solubility, but it is still an extraction technique and the contaminants are not destroyed in situ. In contrast, the remediation scheme proposed in the instant invention utilizes electromigration to transport oxidants through the soil. Since electrokinetics is used to transport decontaminating solutions, not contaminants, the solubility of the contaminant is not a limitation. The contaminants are degraded in place and secondary treatments are not required. The primary purpose of the instant improved electrokinetic process is to overcome problems with low permeability and channeling which would otherwise prevent the decontaminating solution from reaching the contaminants.
Marks et al., U.S. Pat. No. 5,458,747, October 1995, detail the use of biological reagents in conjunction with electroosmosis to decontaminate soils. The electric field is employed in their technology to extract metallic and soluble organic contaminants, transport biological reagents, and transport nutrients and process chemicals. Their process is limited to the treatment of soils contaminated with readily biodegradable contaminants. On the other hand, the instant invention employs strong oxidants which have been shown to degrade virtually all organic compounds. Thus, there are fewer limitations on the contaminants that can be degraded.
In addition to problems with low soil permeability and contaminant insolubility, soil remediation is often hampered by the chemical inertness of the contaminants. Many soil contaminants are difficult to degrade chemically or biologically. Otherwise the contaminants would degrade due to natural attenuation. Recalcitrant contaminants, such as chlorinated organics, can only be oxidized by extremely reactive chemicals. Due to the inherent reactivity of these extremely reactive chemical oxidants, they have short lifetimes and must be prepared in situ. The oxidant of choice for utilization in the instant technology is the sulfate radical anion which can conveniently be generated in situ by applying moderate heat to a peroxydisulfate containing soil, Eq. 1, infra. ##STR1## Heat loss during electroremediation has generally been considered a waste of energy from the perspective of electrokinetic extraction of metallic impurities from the soil. Therefore, the prior art in electrokinetic soil remediation strove to use smaller currents and electric fields in order to make the process more energy and cost efficient. The present invention, in contrast, benefits from resistive heating within the soil. The heat generated by larger electric fields supplies the energy required to initiate the cleavage of peroxydisulfate into sulfate radical anions and desorb contaminants from hydrophobic pore space within the soil. Therefore, in remediating soils containing recalcitrant contaminants the present invention uses electric fields which are typically an order of magnitude larger than those utilized in the prior art.
A secondary objective which is realized as a result of practice of the instant, new, and novel electrokinetic process is to contain the reaction products and remove them from the soil in a controlled manner. Most electrokinetic remediation schemes taught and disclosed in the prior art are based on electroosmosis and only work well in packed clay soils. Increased contaminant leaching could occur if electroosmosis drives the contaminant from the clay into sandy areas or fractures in the soil (Acar et al., Waste Manage, 1993, 13, pp. 141-151). Since the method proposed in the instant new and novel process uses electromigration to deliver reagents rather than to mobilize the contaminants, only the peroxysulfate compounds are free in solution. The contaminants are still sorbed to the soil so the most undesirable risk of spreading the contamination is dramatically reduced. It is noteworthy that the peroxysulfate reagents are easily degraded and decompose to sulfate and water within days (Toennies, J. Am. Chem. Soc., 1937, 59, p. 555), since in instances when an area of the soil having a very high permeability is to be treated by practice of the instant invention and the electric field is unable to completely contain the mobile reagents during electrokinetic remediation, only relatively innocuous materials, such as sulfate, will break containment. In addition, electromigration across soils is at least an order of magnitude faster than is electroosmosis (Acar et al., Environ. Sci. Technol., 1993, 27, p. 2638; and Hicks et al., Environ. Sci. Technol., 1994, 28, pp. 2203-2210) and is efficient in both high and low porosity and in both saturated and unsaturated soils (Lindgren et al., Environmental Remediation, 1991). Therefore, leaching in arid, sandy, or heterogeneous soils is less likely. Furthermore, the continued migration and removal of expected reaction products, such as sulfate, from contaminated soils and aquifers using electromigration should be readily accomplished (Runnells et al., EPRI TR-104170 Project 8060, 1994).
As noted above, the instant invention offers several advantages over electroosmotic remediation processes. First, the process time, heretofore referred by such prior art processes, is dramatically reduced by the practice of the instant invention because the electromigration of ionic species across the soil occurs much more rapidly than transport by electroosmosis. Second, common problems that have plagued electroosmotic methods, such as the consolidation of the treated soil, the buildup of pH gradients, or the precipitation of the contaminant near the electrodes, are reduced because electroosmosis is only a minor contributing factor in the practice of the instant invention. Third, the increased efficiency of electromigration relative to electroosmosis allows a wider range of more reactive electrodes to be used since the electrodes will likely remain intact during the shorter duration of the electromigration process. This is an important consideration in instances where it would be convenient to use buried metallic objects, such as previously discarded 55 gallon drums or leaking underground storage tanks, as electrodes.

In situ remediation of soils containing organic contaminants using the electromigration of peroxysulfate ions

Tennessee Valley Authority, United States Corporation


The present disclosure provides a roller for cleaning a backside of a wafer. The backside of the wafer has a central region and a periphery region surrounding the central region. The roller includes an upper element, a bottom element, and an axis element for connecting the upper element and the bottom element. The upper element of the roller is configured to contact with a frontside of the wafer. The bottom element is configured to contact with the backside of the wafer and remove particles from the periphery region of the backside of the wafer. The bottom element is made of materials selected from a group comprising abrasive pads, sand papers, and asbestos.

A chemical mechanical polishing or chemical mechanical planarization (CMP) process is accomplished by holding a semiconductor wafer [A1]against a rotating polishing surface, or moving the wafer relative to the polishing surface, under controlled conditions of temperature, pressure, and chemical composition. The polishing surface, which may be a planar pad formed of a relatively soft and porous material (e.g., a blown polyurethane), is soaked with a chemically reactive and abrasive aqueous slurry. The aqueous slurry, which may be either acidic or basic, typically includes abrasive particles, reactive chemical agents such as a transition metal chelated salt or an oxidizer, and adjuvants such as solvents, buffers, and passivating agents. In such a slurry, salt or other agents may facilitate chemical etching actions, while the abrasive particles and the polishing pad together may facilitate mechanical polishing actions.
The CMP process is becoming the main planarization technique for planarizing both dielectric and metal layers. For the CMP of a dielectric layer, such as borophosphosilicate glass (BPSG), borophosphorous tetraethyl orthosilicate (BPTEOS), and plasma-enhanced chemical vapor deposition (PECVD) oxides, a fumed silica-based slurry is normally used. Other types of slurries, such as dispersed silica, fumed and dispersed alumina, may also be used for CMP of both dielectric layers and metal layers (such as tungsten or titanium). When a CMP process is completed, the wafer's surfaces are covered in particles (referred to as slurry residues). At later actions in the process flow, if the slurry residues are allowed to be remained on or even redistributed across the surfaces of the wafer, contamination issue may occur, which would result in the loss in die yield and/or device performance. To prevent contamination, all surfaces of the wafer must be free of slurry residues after the CMP process by a post-CMP cleaning process.
Accordingly, there remains a need in the art to provide a cleaning device to improve the performance of the post-CMP cleaning process performed on a wafer.

Roller for cleaning wafer and cleaning apparatus having the same

XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.


A first set of semiconductor devices is formed on a first semiconductor substrate comprising a first semiconductor material having a first melting point. A first via-level dielectric layer containing first contact vias is formed on the first semiconductor substrate. A second semiconductor substrate comprising a second semiconductor material having a second melting point lower than the first melting point is formed either by bonding or deposition. A second set of semiconductor devices is formed on the second semiconductor substrate. A second via-level dielectric layer, second contact vias contacting the second set of semiconductor devices, and inter-substrate vias electrically connecting the first contact vias are thereafter formed. A metal interconnect layer containing a metal interconnect structure is formed over the second via-level dielectric layer to electrically connect the first and second set of semiconductor devices through the second contact vias and the inter-substrate vias.

Three-dimensional semiconductor structures in which a plurality of layers containing semiconductor devices are formed on the same semiconductor substrate provide the advantage of increasing semiconductor device density without resorting to device scaling. The increase in the areal device density may be advantageously employed in facilitating fabrication of high performance semiconductor chips in which average wiring length between devices is shorter than in conventional semiconductor chips containing semiconductor devices fabricated in a single semiconductor layer. Reduction of the average wiring length results in a decrease in signal delay between gates, and consequently, in a faster device switching.
The increase in the areal density may also be advantageous for packaging purposes. Specifically, a semiconductor chip employing three-dimensional semiconductor structures with a plurality of layers containing semiconductor devices may be fitted in a smaller package than a conventional semiconductor chip containing only one layer for semiconductor devices performing the same function. Due to such advantages of three-dimensional semiconductor structures, various methods for forming such three-dimensional semiconductor structures have been disclosed in the prior art.
One of the most challenging aspect of prior art methods for the manufacture of three-dimensional semiconductor devices is the effect of thermal cycling needed to form semiconductor devices in a subsequently formed semiconductor layer on the device characteristics of pre-existing semiconductor devices in a previously formed semiconductor layer. This problem can be egregious in terms of diffusion of dopants in the previously formed semiconductor layer since excessive thermal cycling may result in blurred interface between doped regions and/or deactivation of dopants resulting in poor device performance.
In view of the above, there exists a need for a three-dimensional semiconductor structure that does not provide degradation of performance due to inherent limitations in the processing sequence, and methods of manufacturing the same.
Particularly, there exists a need for a three-dimensional semiconductor structure in which thermal cycling employed for a subsequently manufactured set of semiconductor devices does not adversely impact the device performance of a previously manufactured set of semiconductor devices.

Three-dimensional integrated heterogeneous semiconductor structure


The present invention relates to the field of thermostable enzymes, methods for their inactivation, and related uses, kits and reagents. In particular, the invention relates to a method for reversible inactivation of thermophilic enzymes by chemical modification under aqueous or non-aqueous conditions.

One of the main nucleic acid amplification techniques is the Polymerase Chain Reaction (PCR) (Saiki et al., Science, 230:1350-54 (1985)) taught in U.S. Pat. Nos. 4,683,202; 4,683,195; and 4,965,188, each incorporated herein by reference. Many commercial suppliers, including Fermentas, offer reagents for PCR.
PCR reaction mixture is basically assembled from the following components: nucleic acid target template, two or several target-specific oligonucleotides (primers), a thermophilic nucleic acid polymerase, deoxyribonucleoside triphosphates and a reaction buffer.
In each cycle of PCR amplification, a double-stranded target sequence is denatured, primers are annealed to each strand of the denatured target, and the primers are extended by the action of a DNA polymerase. DNA synthesis initiates at the accessible 3′-OH group of the target-specific oligonucleotides flanking the DNA sequence to be copied, thereby generating an identical copy of the target template nucleic acid sequence. The enzymatic reaction is repeated for a substantial number of thermal cycles consisting of the denaturation of the target nucleic acid, annealing of the primer oligonucleotides to complementary nucleic acid sequences and the subsequent extension of these primer-template complexes by the thermophilic nucleic acid polymerase.
Specificity of DNA amplification depends on the specificity of primer hybridization. Oligonucleotide primers for PCR are designed to be complementary to, or substantially complementary to, sequences occurring at the 3′ end of each strand of the target nucleic acid sequence. Hybridization of the primers with the target occurs usually at sufficiently high temperature to provide annealing conditions that ensure binding of the primers mainly to the complementary nucleic acid sequence of the target. However, PCR reaction mixtures are often assembled at room temperature, thus under less stringent oligonucleotide hybridization conditions. At room temperature, most thermophilic nucleic acid polymerases used for PCR possess a residual catalytic activity, which may cause degradation of primers and the formation of non specific byproducts, such as dimmers of primers or non-specific primer extension products. These unspecific PCR products can compete during subsequent PCR cycles with the specific PCR product for the primer molecules, DNA polymerase and nucleotides, thereby severely decreasing the efficiency of the amplification of the desired sequence (see, Chou et al., Nucleic Acids Research, 20(7): 1717-1723 (1992)).
A number of laborious, expensive and time-consuming approaches have been proposed to overcome difficulties related to the appearance of unspecific PCR byproducts. These so called "Hot Start" methods include physically separating reactants until annealing temperatures are reached, either manually ("manual hot-start PCR"), or by using wax (U.S. Pat. No. 5,411,876). Such procedures add a lot of extra time into the experimental process, and they also carry a higher risk of contamination due to the wax barrier itself or the requirement of opening the reaction vessel once some of the reactants have already been mixed and heated. Moreover, the formation of solid wax-barrier above the reaction mixture after finishing the PCR is less convenient for further sample processing.
Another method of reducing formation of unspecific extension products is a reversible inhibition of the DNA polymerase used in PCR. U.S. Pat. No. 5,338,671 discloses non-covalent modification of the nucleic acid polymerase by use of antibodies specific for said polymerase to inhibit the polymerase's activity. Pre-mixing of nucleic acid polymerase and polymerase-specific antibodies at room temperature results in the formation of antibody-polymerase complexes. Under these conditions, substantially no oligonucleotide extension by the DNA polymerase can be detected. At elevated temperatures, the antibodies become denatured and they dissociate from the complex, thereby releasing the active DNA polymerase. However, this method is expensive and carries the risk of contamination due to the possible presence of residual nucleic acids derived from the antibody preparation.
Several technologies for reversible covalent chemical inactivation of DNA polymerase, which becomes active only after incubation for a certain time period at elevated temperature, thus preventing production of PCR byproducts during the reaction set-up and the initial heating phase, are known in the prior art. It is generally considered that reversible chemical modification of DNA polymerase is the most convenient and preferred method for the "hot start" technique. Various modifying agents and modification conditions have been proposed that generate reversibly inactivated DNA polymerase with differing enzymatic characteristics that may be classified into two major groups of the modifying compounds:                1. protein acylation with dicarboxylic acid anhydrides (water based or organic solvent based reaction mixtures);        2. Protein modification with aldehydes resulting in the formation of Schiff bases.
The chemically modified DNA polymerase disclosed in U.S. Pat. Nos. 5,677,152, 5,773,258, which are incorporated herein in their entirety by reference, is prepared in a single phase water-based system by treating the enzyme with the modifying reagent, dicarboxylic acid anhydride. However, this method requires quite strict control of the reaction conditions, such as pH, temperature and the reagent excess.
Alternative approach was disclosed in the U.S. Pat. No. 6,479,264, where dicarboxylic acid anhydride was used as a modifying reagent and the reaction was carried out in an anhydrous aprotic organic solvent.
Aldehydes, preferably the formaldehyde, are another group of modifying reagents that reversibly inactivate the thermophilic enzymes under essentially aqueous conditions, as taught in the U.S. Pat. No. 6,183,998. However, thermophilic DNA polymerase obtainable by such a modification is characterised by comparatively long reactivation times, up to 15 minutes at 94° C., what is sometimes undesirable for experimental purposes.


A refillable or disposable mouthwash and cup dispensing system incorporating a handle effect from the dispenser and cooperating with a wall mounted bracket to simplify removal and refilling. A mechanism for conserving the taps from dispensable units is disclosed.

1. Prior Art
This patent relates to liquid and cup dispensers and more particularly, combination liquid and cup dispensers.
There is no threaded service caps such as those shown in the prior art which might result in a greater probability of leaks.
The prior art dispensers must be turned upside down and another service cap located on the bottom of the dispenser to gain access to the interior and spigot.
The prior art also in requires a cumbersome elongated clip to snap into place to secure cups which could also cause cups to be crushed or distorted if they were forced away from their intended seat in the concave section of the main body due to cup size change.
Similarly the prior art shows a irregularly shaped interior which would make wall mounting more difficult and would also result in a more complicated cleaning.
Mounting of this invention allows for single hand operation for cleaning and filling unlike the prior art patents.
This patent is designed to improve on the prior art to provide an easily filled and cleaned mounted dispenser for mouth wash as an example in a hospital type environment.
In order to accomplish this, a large diameter opening, such as that shown in the prior art at the top is provided with a loose fit liftoff lid so that no accessory type funnel devices would be necessary in order to refill the container. This is offset from the wall to simplify filling further.
The dispenser disclosed in this application has an offset bracket which allows for it to be easily removed, filled while the mounting stays in place and cleaned while the mounting remains in place.
2. General Discussion of the Invention
The present invention is designed in order to have a disposable or washable portion which portion is held by a mounting means to a bracket on the wall. When the user of the device needs to clean or dispose of the holder for the mouthwash or cups it can be easily removed and a separate container replaced simultaneously so that there is no need for a long period when the bracket would not have a mouthwash and cup dispenser mounted.
One of the major problems which the prior art does not address is that this invention has the ability to have disposable or easily replaced mouthwash dispenser and cup holders.
The disposal nature of these is evidenced by the fact that most mouthwash comes in disposable plastic containers initially and by adding the bracket and for the wall on a mounting mechanism cooperating with the bracket which is attached to the mouthwash container no great expense is incurred.
The containers can be glass and therefore reusable. They can also be recyclable plastic or glass.
By disposing of threaded surface caps, less capable or handicapped individuals can more easily use the invention.
Less expensive production is provided for because of the simplicity of the design.
It is therefore another object of the invention to maintain the cup supply in a totally enclosed inner chamber with an easily replaced fluid supply.
It is a further object to dispense with as many corners as possible to make the preferred embodiment easy to clean and without corners capable of trapping debris.
A further object of the invention to provide a simplified mouth wash and cup dispenser.
As a further object to provide mouth wash dispenser which promotes the use of large supply bottles and therefore lessens the environmental impact of multiple mouth wash bottles.
These and other objects and advantages of the invention will become better understood hereinafter from a consideration of the specification, with reference to the accompanying drawings forming a part thereof and in which like numerals correspond to like parts throughout the several views of the invention.


At least one implementation herein enables interleaver and deinterleaver buffer modification during Showtime. That is, at least one implementation herein enables a multicarrier controller apparatus to reallocate interleaver and deinterleaver buffer memory to accommodate data rate changes in the upstream and downstream communication channels.

Digital subscriber line (DSL) technology provides high-speed data transfer between two modems across ordinary telephone lines, wherein digital data transfer rates from tens of Kbps to tens of Mbps are supported over standard (e.g., twisted pair) telephone lines, while still providing for plain old telephone service (POTS). Asynchronous Digital Subscriber Line (ADSL) and Very High Digital Subscriber Line (VDSL) have emerged as popular implementations of DSL systems, where ADSL is defined by American National Standard Institute (ANSI) standard T1.413 and International Telecommunication Union (ITU-T) standards G.992.3, G.992.5, and VDSL is defined by ANSI standard T1.424 and ITU-T standard G.993.2. ADSL, VDSL and other similar DSL systems (collectively referred to as "xDSL") typically provide digital data transfer in a frequency range above the POTS band (e.g., about 300 Hz to 4 kHz), for example ADSL G.992.3 operates at frequencies from about 25 kHz to about 1.1 MHz.
Interleaving is a technique used in data communication systems for protecting codewords or other data words against burst errors that occur during data transmission. Several consecutive bits of a data stream are corrupted during transmission when a burst error occurs, e.g., due to impulse noise. Error correction schemes that expect errors to be more uniformly distributed can be overwhelmed when burst errors occur. Data is often transmitted with error control bits that enable the receiver to correct a certain number of errors that occur during transmission. However, if too many errors occur within a codeword, the codeword cannot be correctly decoded despite use of an error correction scheme. To mitigate burst errors, the codeword bits are typically interleaved before being transmitted. This way, bits from the same codeword are not transmitted in consecutive order. Instead, the codewords are broken up and the bits from different codewords are consecutively transmitted. A burst error is much less likely to corrupt a codeword because the codeword bits are more uniformly distributed during data transmission. Receivers are more capable of correctly decoding transmitted codewords when interleaving is used.
Many types of data communication systems that employ interleaving are provided a fixed amount of memory to be allocated between interleaving and de-interleaving operations. For example, DSL (digital subscriber loop) modems such as VDSL and VDSL2 modems are typically provided a total memory size (in terms of delay octets) to be allocated between a downstream interleaver buffer and an upstream de-interleaver buffer. Codewords are interleaved in the downstream direction (i.e., from a provider or operator to a subscriber) and de-interleaved in the upstream direction (i.e., from the subscriber to the service provider or operator). The protection capability of the interleaver depends on the size of the interleaver buffer. The amount of interleaver buffer memory (interleaver depth) is typically proportional to the data rate, maximum delay and the required minimum impulse noise protection for the downstream and upstream flows.
The fixed memory is ideally allocated so that a desired noise protection capability is achieved while maintaining optimal upstream and downstream data rates. However, the optimal upstream and downstream data rates depend on actual channel conditions and interleaver memory allocation is typically performed before channel conditions are known to the modem (e.g., before Showtime). For example, DSL modems typical allocate memory between interleaver and de-interleaver buffers based on data rate, maximum delay and impulse noise protection configuration parameters provided to the modem as part of the MIB (management information base). These parameters represent worse-case, best-case or expected channel conditions. Therefore, the memory may not be optimally allocated between the interleaver and de-interleaver under some conditions.

This patent is subject to a terminal disclaimer.