A method for user authentication is disclosed including capturing involuntary eye movement of an eyeball of a user; generating a unique pattern to identify the user in response to the involuntary eye movement; storing the unique pattern into a secured non-volatile memory device; and authenticating the user with an electronic device in response to the stored unique pattern.

Referring now to FIG. 1, a cross sectional view of a human eyeball 100 is shown within a skull 102. The human eyeball 100 is an imperfect globe that can be moved within the skull 102 by a plurality of muscles. The act or process of change in position of the human eyeball 100 within the skull 102 is referred to as eye movement or eye motion.
The eyeball 100 includes a retina 110, a pupil 112, an iris 114, a fovea 116, and a lens 118 that interact to capture color images for processing by the brain. A cornea 122 of the eyeball supports the pupil 112, iris 114, and lens 118 over the retina 110. The pupil 112 alters its diameter to adjust the amount of light received by the retina 110.
The retina 110 of the eyeball includes two types of photoreceptors, rods and cones. There are around 120 million cones and 6 to 7 million rods in the retina 110. Cones are concentrated in a rod free area of the retina referred to as the fovea centralis or macula that provides for maximum acuity and color sensitivity. The cones are smaller and more closely packed than elsewhere on the retina 110.
The optic nerve 126 is a cable of nerve fibers coupled to the eyeball that carries electrical signals from the rods and cones in the retina to the brain. The point where the optic nerve departs the eyeball through the retina is devoid of rods and cones. Thus, the optic nerve forms a "blind spot" in the retina.
FIGS. 2A-2C illustrate the plurality of muscles 202-202 coupled to the eyeball 100 to cause eye movement within the skull. In FIG. 2A, a left lateral rectus muscle 201L and a right lateral rectus muscle 201R pivot and move the eyeball 100 left and right horizontally as shown by the arrowhead 211. In FIG. 2B, a superior rectus muscle 201T on top and an inferior rectus muscle 201B on bottom pivot and move the eyeball 100 up and dawn vertically as shown by the arrowhead 212. In FIG. 2C, a superior oblique muscle 202S and an inferior oblique muscle 2021 roll and move the eyeball 100 as shown by the curved arrowhead 213. These muscles can cause voluntary eye movement under the will of a human being and involuntary eye movement that the human being does not even know has occurred. Other muscles around the eyeball 100 may also contribute to voluntary and involuntary eye movement. The muscles are under control of the nervous system in a body including the brain.
Involuntary eye movement, in contrast to voluntary eye movement, is often considered to be a pathologic condition when observed clinically by an eye doctor. However, there are normal, physiologic, miniature-involuntary eye movements that occur and are more often observed during eye fixation on a target. These miniature-involuntary eye movements are a normal physiological function of the body to prevent fatigue of the rods and cones at the focal point on the retinal surface within the eyeball. Involuntary eye motions have typically been considered to be disturbances or analyzed for study purposes.
The retina 110 of the human eyeball 100 may scanned for various purposes. Retinal scanners that capture a two dimensional map of an anatomy of a retina of an eye are known. Retinal scanners were not intended to measure involuntary eye motion.
Various eye-tracking systems have been used to detect voluntary eye movement for a variety of purposes. For example, virtual reality headsets for gaming may track voluntary eye motion in game play of a video game. As another example, heads-up displays for military systems may track voluntary eye motion for some military purposes. However, eye tracking systems were intended to assess the foveal visual field and the focal attention of the subject and not measure involuntary eye motion, when the involuntary eye motions were considered to be either disturbances or for study purposes only.

Unique patterns extracted from involuntary eye motions to identify individuals


Systems and methods for rotating objects that shift the center of gravity of an object, such as a wing assembly, from a position outside the rotation axis area of the object to a position within the rotation axis area of the object. In one example, a material handling system that employs rotatable slings may be used to rotate an object by shifting the suspended center of gravity from a position outside the rotation axis area (i.e., outside the rotatable slings in at least one position of rotation) to a position within the rotation axis area (i.e., between the slings at all positions of rotation). The suspended center of gravity may be shifted using at least one ballast component (or other suitable force-applying device) that exerts a force on the object in a direction and magnitude sufficient to so shift the suspended center of gravity of the object.

1. Field of the Invention
This invention relates generally to rotation of objects, and more particularly to rotation of an object having a suspended center of gravity that lies within the rotation axis area of the object.
2. Description of the Related Art
Often times it is desirable to lift and rotate large pieces of equipment to gain access to all sides of the equipment In this regard, handling systems have been developed that lift and rotate objects such as rail cars, trailer frames, engine blocks, etc. Such handling systems include powered sling material handling systems such as a FLIP-RITE™ handling system available from ITNAC Corporation of Birdsboro, Pa. A powered sling material handling system employs continuous powered slings that are suspended from an overhead device that may be hung from a bridge crane or trolley hoist. Each of the continuous powered slings are passed over a rotating drum of the overhead device and around the object to be handled so as to enclose the suspended center of gravity of the object. The object is lifted by raising the overhead device and the attached slings that surround the device. The lifted object is then rotated by turning the rotating drums and slings of the overhead device using electric gear motors.
In the past, powered sling material handling systems have been used to suspend and rotate P3 Orion aircraft wing boxes to provide access to the lower wing surface for maintenance and repair. During such an operation, engines, leading edge, and trailing edge assembly are removed from the wing assembly prior to lifting and rotating the wing box. In this regard, FIG. 1 illustrates a wing box portion 100 of a disassembled wing assembly suspended above a horizontal floor surface 103 and rotated into vertical position using a conventional powered sling material handling system. As shown in FIG. 1, leading and trailing edge assemblies have been removed from wing box 102, and an end cap fitting is attached to the root edge 106 of wing box 100 that includes two lifting horns 108a and 108b that create two support points 109a and 109b. The distance between lifting horns 108a and 108b may be adjustable. Removal of leading and trailing edge assemblies, and installation of the end cap fitting are performed while wing box 100 rests in an upright horizontal position upon a wing support tool (not shown).
Prior to lifting wing box 100 from its horizontal position on the wing support tool, a first continuous sling 120 is passed around the body 102 of wing box 100 and around spacers or standoff devices 114a and 114b at an outboard position toward the wing tip edge 110 of the wing box 100 so that it is in position to contact the leading edge of the wing box 100 at support point 112a and to contact the trailing edge of wing box 100 at support point 112b. A second continuous sling 122 is passed around lifting horns 108a and 108b of the end cap fitting. As illustrated by the dashed hash lines in FIG. 1, support points 112a and 112b and support points 109a and 109b together define a rotation axis area 107 that encloses the suspended center of gravity 130 of wing box 100, i.e., so that the suspended center of gravity 130 stays between continuous slings 120 and 122 at all positions during rotation operations. Furthermore, the position of the suspended center of gravity is at or near the axis of rotation 190 of wing box 100. The distance between support points 109a and 109b is equal to the distance between support points 112a and 112b, support point 109a is horizontally aligned with support point 112a, and support point 109b is horizontally aligned with support point 112b. This equidistant and horizontally aligned support point configuration allows continuous slings 120 and 122 to rotate wing box 100 in an even manner or 1:1 relationship (i.e., rotation speed of continuous sling 120 is the same as the rotation speed of continuous sling 122) without inducing excess torque on the wing box.
As shown in FIG. 1, continuous slings 120 and 122 are passed around rotating drums 140 and 142 of lifting device 150 that is supported at pick point 170, e.g., by hoist. Lifting device 150 is then raised at pick point 170 in the direction of arrow 172 to lift wing box 100, still in horizontal position, from the wing support tool. Once clear of the wing box 100, now supported by continuous slings 120 and 122, is rotated by simultaneously turning rotating drums 140 and 142 of lifting device 150, e.g., as illustrated by arrows 174 and 176 to rotate leading edge of wing box 100 downward while maintaining wing box 100 in a position parallel to horizontal floor surface 103. In this manner wing box 100 may be rotated in the direction of arrow 160 through a vertical position (shown in FIG. 1) to a horizontal upside down position, i.e., so that its lower surface faces upward. Pick point 170 may be variably positioned relative to horizontal beam 151 of lifting device 150 as shown by arrows 171, i.e., so that pick point 170 may be vertically aligned with suspended center of gravity 130 as shown. This is necessary where center of gravity of beam 151 is not horizontally aligned with suspended center of gravity 130, and may be accomplished by lifting wing box 100 by a distance of about 1″ above the wing support tool and then rebalancing the suspended load by repositioning pick point 170.
Although the above-described wing rotation method using powered sling material handling systems has simplified the process of lifting and rotation of aircraft wing box portions of disassembled wing assemblies, both the moving and stationary components of the trailing edge assembly of a P3 Orion aircraft wing assembly (including stationary flap and aileron sections) are removed from the wing box prior to lifting and rotation to ensure that the suspended center of gravity of the wing box is enclosed within an area defined between the support points and lifting horns and is near the axis of rotation of the wing assembly. Otherwise, the wing box may become unstable during the lifting and/or rotation process, and/or excessive torque may be required to rotate the wing box. Removal of the entire trailing edge assembly (i.e., moving and stationary components) is a time consuming and labor intensive operation (e.g., requiring 680 man-hours of time).

Systems and methods for rotation of objects

L-3 Communications Integrated Systems L.P.


A closed face fishing reel comprises a body and a housing detachably secured to the body. The housing includes an aperture for permitting fishing line to pass through. The shape of the aperture is selectively alterable from a configuration which imparts a jerking motion to the line as it is wound into the reel to a configuration which imparts little or no jerking motion to the line as it is wound into the reel. In accordance with the preferred embodiment, the reel includes a body, a housing segment attached to the body, a cover attached to the housing segment and a rotatable member position between the housing segment and cover. The cover and member each include apertures which cooperate one with the other to define a line passageway of variable shape.

A very popular item with fishermen is the closed face fishing reel. This type of reel typically includes a body, a spool mounted to the body, and a winding drum rotatable relative to the spool. A crank and gearing mechanism permit the winding drum to be rotated. A line engaging element extending from the winding drum catches the line and winds it on the spool as the winding drum is rotated. Closed face fishing reels currently available typically include a housing secured to the reel body which encloses the spool, winding drum and gearing mechanism. The forward part of the housing includes a line passageway. The shape of the line passageway determines, at least in part, the characteristics of the discharge of line from the fishing reel when a fishing bait is cast and the characteristics of the infeed of the line as it is wound in. Conventional line passageways are circular, and thus have very little effect on the line as it is wound in.
As will be appreciated by those skilled in the art, generally this type of fishing reel is mounted on a fishing rod through a mounting leg attached to the reel body. In use, an angler uses his hand to grip the upper portion of the reel together with the fishing rod.
When the angler uses particular baits, such as those requiring movement while in the water, it is customary for the angler to "jerk" the bait (i.e., physically move the line by raising the rod tip by hand), while at the same time winding the line in. Although cumbersome, expert anglers have perfected certain techniques which, through use, have been found to promote the catching of fish. Uniform repetition is, however, difficult even for the most experienced anglers. Thus, there is a long-felt need to provide a reel configuration which permits optional automatic, repeatable jerking of the line when the line is wound in.
More particularly, there is a need to provide a closed face spinning reel design permitting a jerking or tugging motion to be imparted to the line when reeled in, such as for attracting the attention of fish, which construction is simple and which enables a variety of different line actions to be easily obtained. Additionally, there is a need to provide such a construction which permits particular line actions to be readily repeatable.
Applicant is aware of several prior attempts to accomplish this result. For example, U.S. Pat. No. 3,166,267, issued Jan. 19, 1965 to Rowe, discloses a spinning reel which purports to provide a jerking motion to a fishing line. The type of jerking action produced relates to the distance each pole is from the spool axis and to the use of a rotating pickup pin on the spool. Several embodiments are described in this patent, each of which involve the complicated use of multiple holes offset eccentrically from the spool axis for selectively positioning the line guiding means in the outer housing at different radial distances from the axis of rotation of the spool member.
In a later patent, U.S. Pat. No. 3,637,157, issued Jan. 25, 1972, Rowe provides an open faced spinning reel design which is disclosed as permitting a considerable amount of jerking or tugging to be imparted to the line when drawn in.
Other closed face fishing reel designs are shown in Fulope, U.S. Pat. No. 3,417,501, issued Dec. 24, 1968 and Myojo, U.S. Pat. No. 4,722,491, issued Feb. 2, 1988.
None of the foregoing patents, however, provide a simple and efficient closed face spinning reel which permits pulsations to be imparted to the line as it is reeled in.


The present invention discloses a novel method for interlayer corrections for photolithographic patterns that are reproduced on a wafer surface capable of correcting not only the optically-induced proximity effect but also the process-induced proximity effect. In the method, a conventional optical proximity correction is first performed on a photomask, the corrected photomask is then used to produce a pattern on a wafer surface. The various critical dimensions bias values at a multiplicity of locations are then measured and fed back to the computer aided design data file for the photomask for producing patterns that are corrected for both optically-induced and process-induced proximity effect on a wafer surface.

A steady increase in the number of transistors that can be built on a chip surface has gain importance in microelectronics during the past decades. The industry data show that the number of bits/chip will be increased from 1 kilobit (Kb) in the late 1960's to 1 Gigabit (Gb) by the end of the decade. It is recognized that device geometries both in the horizontal and in the vertical directions, must shrink steadily to allow such an increase in density to occur. One other benefit achieved by the scaling down of devices to smaller geometries is the increase in circuit speed. The smaller the minimum feature size, i.e., the minimum line-width or line-to-line separation that can be printed on the surface of a wafer, the larger the number of circuits can be placed on the chip resulting in a higher circuit speed.
One of the most frequently used processing techniques in microelectronics for fabricating integrated circuits (ICs) and very large scale ICs (VLSI) is lithography. The term lithography is used to describe a process in which a pattern is reproduced in a layer of material that is sensitive to photons, electrons or ions. The principle is similar to that used in photography in which an object is imaged on a photo-sensitive emulsion film. After development, the exposed regions of the film are left as a layer of metallic silver, while the unexposed regions are removed, resulting in a printed image of the object. While the final product is a printed image in photography, the image in microelectronics is typically an intermediate pattern which defines regions where material is to be etched or implanted.
The manufacturing process for IC devices is dependent upon the accurate reproduction of computer aided design (CAD) generated patterns onto the surface of a substrate. The replication process is typically performed by a lithographic technique, specifically an optical lithographic technique, that is preceded and followed by a variety of etching and ion implantation processes. Lithography is a critical step in semiconductor manufacturing because it is used repeatedly in a process sequence that depends on the device design. The lithographic process determines the device dimensions, which affect not only the quality but also its production volume and manufacturing cost. Lithography transforms complex circuit diagrams into patterns which are defined on the wafer in a succession of exposure and processing steps to form a number of superimposed layers of insulators, conductors and semiconductor materials. For instance, typically between 5 and 30 lithographic steps and several hundred processing steps between exposures are required to fabricate a semiconductor IC package.
A typical photolithographic process can be carried out on a wafer surface by the operating steps of first oxidizing the silicon surface to obtain a thin layer of silicon dioxide, then coating a layer of material that is sensitive to radiations such as ultraviolet light, electron beams or X-ray beams, then imprint a latent image on the material by a lithographic patterning technique, then amplify the latent image by an appropriate development method, the reserve areas delimiting the design to be reproduced on the silicon dioxide layer, then stabilize the image by an appropriate fixing method or a lithography method, and then plasma etching the silicon dioxide surface through openings obtained in the dioxide layer to obtain areas variously doped in the silicon dioxide subsequently defining two-dimensional geometric shapes on the surface of the substrate for the circuit, such as the gate electrodes, contacts, vias and metal interconnects.
Optical lithography, as commonly used in the manufacture of integrated circuits (ICs) and very large scale ICs (VLSI), involves a series of steps for obtaining complex etched structures on a wafer. An optical lithographic patterning process involves the illumination of a metallic coated quartz plate known as a photomask which contains a magnified image of the computer generated pattern etched into the metallic layer. An illuminated image is reduced in size and patterned onto a photosensitive film deposited on the device substrate. Each time the photolithographic steps are repeated, the accuracy of the process determines the quality and the yield of the IC fabrication process. The performance enhancement of advanced VLSI circuitry is increasingly limited by the lack of pattern fidelity in a series of lithographic and reactive ion etching (RIE) processes conducted at extremely small dimensions (e.g., in the sub-half-micron level). In a photolithographic process, a pattern is transferred from a photomask to a photosensitive film (i.e., a photoresist layer) on a wafer. In the RIE process, the pattern in the photoresist is in turn transferred into a variety of conductive or insulating films on the wafer substrate. A successful fabrication process for integrated circuits is therefore closely dependent upon a successful lithographic technique.
During each lithographic step, deviations may be introduced to distort the image that the photomask transfers to the wafer surface. For example, as a result of an optical interference and other interferences which occur during a pattern transfer, images formed on a wafer surface deviate from the original dimension and shape of the photomask that was stored in the computer. The deviations depend on the characteristics of the pattern as well as a variety of processing parameters. Since deviations significantly affect the performance of a semiconductor device, different techniques have been developed to focus on methods of compensation for the optical proximity effect so that they can be included in a CAD file to improve the image transfer process.
The pattern geometries used in fabricating IC devices are frequently of rectangular shape. When rectilinear geometries are printed on a wafer surface, problems are frequently observed at the corner regions of the pattern. For instance, when exposed to light or radiation, a photoresist integrates energy contributions from all surrounding areas. This means that the light intensity in one vicinity of the wafer is affected by the light intensity in neighboring vicinities. This phenomenon and, in general, distortions that affect dimensions and shapes of wafer features are referred to as proximity effects.
With the advancement in modern computer aided design technology, it is possible to predict the proximity effect and to modify a layout to offset the expected deviations. A selective biasing of mask patterns to compensate for pattern deviations occurring during wafer processing is therefore a desirable alternative to the costly development of new higher resolution processes. The term optical proximity correction (OPC) is therefore used to describe the process of selective biasing in mask patterns for compensating a proximity effect occurred in an optical image transfer process. The technique of biasing patterns to compensate for image transfer deviations has also been applied to E-beam lithography to counteract the effects of back scattered electrons. The techniques of OPC therefore enable the use of an automatic pattern biasing concept in pattern transfer processes in VLSI and ULSI technologies.
To implement an OPC process, a series of shrink and expand operations is employed to fracture a CAD pattern data base into basic rectangles abutting at vertices existing in the original design. The rectangles are then classified as to their functional relevance based on their spatial relationships to prior or subsequent CAD design levels. By shifting the edges of only the basic rectangles deemed relevant for the improvement of the VLSI device performance, the generation of new vertices is minimized and effort is expended only on high value added portions of the circuit design. For example, a plurality of gate regions in a CAD design is first identified. Then, a plurality of design shapes in the CAD design is sorted according to their geometric types. The plurality of sorted design shapes shares at least one side with a second design shape. The sorted design shapes are then grouped according to their widths. Finally, all of the grouped design shapes having been identified as gate regions are biased based on applicable OPC rules. FIGS. 1A and 1B show test patterns before and after OPC are printed on a plain wafer that does not have topography or other process-induced CD variations. It is possible to get a corrected pattern through theoretical aerial image correction on plain wafers by a commercial OPC software. However, the software would not work on wafers that have topography or other process-induced CD variations.
In practice, when a photomask is received from a customer and reproduced on a wafer surface, there are frequently critical dimension (CD) variations at various locations on the wafer surface caused by optical distortions. Conventionally, these CD variations are compensated by using commercially available software for computer aided design files. Another conventional method for compensating CD variations caused by distortions formed in optical imaging on a photoresist layer, i.e., sometimes known as a photoresist swing effect, is to add an anti-reflection coating layer prior to the coating of the photoresist layer. For instance, when a wafer surface has been processed to provide a thin gate oxide layer and thick field oxide regions, and a polysilicon layer is subsequently deposited thereon, an anti-reflection layer (i.e., a bottom anti-reflective coating (BARC) layer) can be first coated to cover the polysilicon layer. A photoresist layer is then coated on top of the BARC layer. Since the swing effect is caused by the reflectance of incident light beams on a wafer surface and the formation of constructive and destructive interferences, the additional layer of BARC substantially eliminates light reflectance from the wafer surface by absorbing lights and thus minimizing a photoresist swing effect. Substantially smaller CD variations on the surface of the wafer can be achieved by the BARC addition.
Additional problem that causes proximity effect on the surface of a wafer is the topography of the wafer surface formed after the deposition of a polysilicon and an anti-reflectance coating layer. Topography exists even after a planarization process has been conducted on the wafer surface. For instance, when a polysilicon conducting line is formed on a wafer surface which has a thin oxide coating layer at certain sections and thick field oxide layers at other sections, the width of the conducting line formed at different locations, i.e., on top of the thin oxide region or the thick field oxide regions, are different. The reason for the variation in the width of the polysilicon line formed is the variations in the thicknesses of the photoresist layer coated. This is shown in FIG. 2.
It is seen in FIG. 2 that when substrate 26 is formed with a thin oxide layer 28 and thick field oxide regions 30 on top, the polysilicon layer 34 deposited conforms to the topography of the oxide layers. The topography of the polysilicon layer 34 is then reproduced in a BARC layer 36 subsequently deposited on top of the polysilicon layer for reducing a swing effect on the photoresist layer. However, as seen in FIG. 2, the photoresist layer 42 subsequently coated on top of the BARC layer 36 has significant thickness variations. For instance, the photoresist layer 42 at section 44 is substantially thicker than at section 46. It is known that during a photoresist imaging process, the photoresist layer is subjected to the same exposure dose of either an optical source or an electron-beam source. Consequently, the energy dosage requirement between sections 46 and 44 is different due to the different resist thickness. As a result, the latter needs lesser exposure dosage than the former. This creates a CD variation on the polysilicon line formed from the polysilicon layer 34.
Even though the utilization of a bottom anti-reflective coating layer reduces a photoresist swing effect, the CD variations on the feature formed (i.e., the line) still exist. Moreover, the anti-reflective coating layer is frequently coated of an organic material which has approximately the same etch rate as an organic photoresist layer during a photoresist etching process. It is therefore necessary, when the substrate must be etched all the way through so that its surface can be exposed, to first etch away the BARC layer before the polysilicon layer can be etched. The utilization of a BARC layer therefore creates process complications for a semiconductor fabrication process. First, the additional cost of a BARC layer and the processing time required for coating such layer contribute to the total fabrication costs. Secondly, the etching process for the polysilicon layer becomes more complicated since the process must also etch away the BARC layer. Thirdly, the thickness of the photoresist layer deposited on top of the wafer surface can not be reduced in order for the photoresist to function satisfactory. It is known that the resolution achieved in a photolithographic process is inversely proportional to the thickness of the photoresist layer. Therefore, the thicker photoresist layer required in a photolithographic process produces a less than satisfactory resolution.
It is therefore an object of the present invention to provide a method for proximity correction on a wafer surface during a photolithographic process that does not have the drawbacks and shortcomings of the conventional proximity correction methods.
It is another object of the present invention to provide a method for interlayer proximity correction on a wafer surface that eliminates the need for an anti-reflective coating layer.
It is a further object of the present invention to provide an interlayer method for proximity correction on a wafer surface during a photolithographic process by first correcting optically induced proximity effect and then correcting process-induced proximity effect.
It is another further object of the present invention to provide an interlayer method for proximity correction on a wafer surface during a photolithographic process by first conducting an optical proximity correction and then performing a photomasking process to measure the CD variations on a wafer surface and to feedback the variations to a computer aided design file for correcting the process-induced proximity effect.
It is still another object of the present invention to provide an interlayer method for proximity correction on a wafer surface during a photolithographic process which is capable of correcting process-induced proximity effect such as line-end shortening and photoresist swing effect.
It is yet another object of the present invention to provide a method for proximity correction on a wafer surface during a photolithographic process that can be used effectively to correct proximity effect caused by topography on the wafer surface.
It is still another further object of the present invention to provide an interlayer method for proximity correction on a wafer surface during a photolithographic process in which the proximity effect existed between a polysilicon layer and an underlying oxide layer can be effectively corrected.

Interlayer method utilizing CAD for process-induced proximity effect correction

Taiwan Semiconductor Manufacturing Company, Ltd.


A system and method for measuring a pipe is provided. The system includes a frame rotatably receiving the pipe, a carriage movably positionable along the frame, a guide floatingly positionable about the carriage, at least one sensor for measuring a position of the pipe, and a measurement unit operatively linked to the sensor for collecting measurements therefrom. The guide has a mouth that receivingly engages the pipe and axially aligns therewith. The pipe is measured with the sensor(s) while moving at least one of the pipe, the carriage and the guide.

This invention relates generally to techniques for measuring pipe. More specifically, the invention may relate to techniques for measuring dimensions, such as outer diameter of a drill pipe used in wellbore operations.
A wellbore may be drilled to reach subsurface reservoirs containing valuable hydrocarbons. To form the wellbore, a downhole drilling tool with a bit at an end thereof may be advanced into the earth. The drilling tool may be extended into the earth by threadedly connecting stands of drill pipe together to form a drill string. The quality of the drill pipe, such as the consistency of the shape (e.g., outer diameter) of the drill pipe, may affect drilling operations. Variations in shape of the drill pipe may affect, for example, rotation of the drill pipe during operation which may also affect operation of the drilling tool and/or drill bit.
Techniques have been developed to check the quality of drill pipe. In some cases, inspections of drill pipe may be performed to check, for example, full length and full body measurements. Such inspections may involve measurement of an outer diameter of the drill pipe using, for example, hand held micrometers, lasers, electronic measurement devices, sensors, etc. Measurements of the outer diameter of the drill pipe may be performed utilizing contact or non-contact methods. Examples of pipe measurement techniques may be found in US Patent/Application Nos. U.S. Pat. Nos. 6,862,099, 5,867,275, 5,043,663, 5,867,275, 6,272,762, 6,745,136, 6,772,636, 6,931,748, 6,904,690 and 2011072905.


In a cellular phone terminal, a bit error rate measurement section measures a bit error rate of broadcast data received by a broadcast reception section for receiving a digital broadcast to output broadcast data while a transmission operation of a communication transmission section for wirelessly communicating with a broadcasting communication network is performed. When the measured bit error rate is equal to or higher than a predetermined threshold, stopping of the transmission operation of the communication transmission section is instructed. Thus, a failure such as interruption of television broadcasting reproduction can preliminarily be prevented by avoiding error occurrence in reception of the 1 segment broadcasting service due to an influence of a transmission electric wave in data communication. As a result, stable reception of the 1 segment broadcasting service can be executed.

1. Field of the Invention
The present invention relates to a technical field of a network-linked digital terrestrial television broadcasting system provided with both a digital television broadcast reception function and a bi-directional digital data communication function using a public telecommunication network where both the functions can operate in association with each other. In particular, the invention relates to a system and method of network-linked digital terrestrial television broadcasting in which an operation for data communication via a public telephone network is controlled on the basis of monitoring the result of a digital television broadcasting reception status.
2. Description of the Related Art
Since December 2003, Hivision program-based terrestrial digital broadcasting for household television sets has been operating in three major metropolitan districts of Japan: Tokyo, Nagoya, and Osaka. Its viewable area will gradually expand in years to come. Then in 2011, all the existing analog television broadcasting will stop, and the transition to the terrestrial digital broadcasting is expected to be completed.
Furthermore, preparation is under way for implementation of terrestrial digital broadcasting for mobile terminals such as cellular phones and personal digital assistances (PDA) (hereinafter, referred to as 1 segment broadcasting service) The 1 segment broadcasting service uses a low communication bit rate of 2 Mbps or lower and therefore can only transmit low-resolution video as compared with the terrestrial digital broadcasting for household television sets. However, the realization of a new service, which has been difficult, is now anticipated such as stable reception of the broadcast by devices in motion or the integration of the broadcast reception with data communication by making use of a mobile terminal's characteristics. Above all, a linked service system of the broadcast reception and the data communication can easily be structured by adding a reception function for the 1 segment broadcasting service to a cellular phone so the cellular phone industry is paying particular attention to the new service.
When the network-linked digital terrestrial television broadcasting function operates on the cellular phone, depending on a certain particular condition, a failure such as interruption of television broadcast reproduction may be caused because of an occurrence of a reception error in the 1 segment broadcasting service due to the influence of a transmission electric wave on a data communication side. To ensure an acceptable video reduction quality in the 1 segment broadcasting service, avoiding this problem is a very critical issue.
As a conventional art for solving this problem, for example, Japanese Laid-Open Patent Application No. 2003-009222 discloses a method of stopping a transmission operation based on the determination that a reception side will suffer a negative effect when a sum of an electric power of a transmission electric wave and an electric power of a reception electric wave exceeds a predetermined threshold.
Japanese Laid-Open Patent Application No. 2004-146910 also discloses a method of predicting a degradation condition of the reception sensitivity through a calculation from a relation between a transmission electric wave frequency and a reception electric wave frequency and changing the transmission frequency when it is judged that degradation of the sensitivity on the reception side will occur on the basis of the prediction.
However, according to the method disclosed in Japanese Laid-Open Patent Application No. 2003-009222, no mechanism is provided for confirming whether or not the reception side actually suffers a negative effect even when the sum of the electric power of the transmission electric wave and that of the reception electric wave exceeds the predetermined threshold so there is a problem in that accuracy of avoiding the reception failure cannot be secured. In addition, according to the method disclosed in Japanese Laid-Open Patent Application No. 2004-146910, although the degradation condition for sensitivity on the reception side is predicted through the calculation from the relation between the operating transmission electric wave frequency and the operating reception electric wave frequency, no mechanism is provided for confirming whether or not the reception side actually suffers a negative effect in this case too. Thus, there is also a problem in that the accuracy of avoiding the reception failure cannot be secured. Moreover, when both the functions of the reception of the 1 segment broadcasting service and the data communication are realized in a compact mobile terminal such as a cellular phone, an antenna for receiving the 1 segment broadcasting service and another antenna for performing the data communication need to be mounted physically close to each other. Thus, the influence of the transmission electric wave on the data communication side more severely disturbs the reception of the 1 segment broadcasting service.

System and method of network-linked digital terrestrial television broadcasting

Casio Hitachi Mobile Communications Co., Ltd.


A depression actuated switch which is suitable for achieving a reduction thickness and which does not easily malfunction even when an end depressing operation is performed thereon includes: a driving member 4 having a depressing portion 4a and a mounting portion 4b which are connected together by an elastic portion 4c that is elastically deformable during operation; a sheet-like flexible member 2 to the lower surface of which the mounting portion 4b of the driving member 4 is attached; a cushion member 3 which is positioned so as to surround the driving member 4, to the upper surface of which the sheet-like flexible member 2 is glued and which is more liable to be elastically deformed than the sheet-like flexible member 2; a click spring 5 which is arranged below the depressing portion 4a of the driving member 4 and which generates a tactile click feel when it flips over; and a membrane switch 6 arranged below this click spring 5 and which effects conduction between contacts by the click spring 5 which has flipped over.

1. Field of the Invention
The present invention relates to a depression-type switch which generates a tactile "click" feel when it is turned on by depressing a key top or the like and which is designed to provide an overstroke, making it possible to further push in the key top or the like even after the switch has been turned on.
2. Description of the Related Art
In such a depression-type switch, a tactile click feel is transmitted to the finger of the operator when the key top is pushed in by a predetermined stroke, so that the operator can clearly feel with his finger that the switch has been turned on. Further, the stroke is not at an end immediately after the turning on of the switch but some more stroke (overstroke) is provided, so that an uncomfortable impact is not easily transmitted to the finger of the operator. Thus, a satisfactory operating feel can be expected. Further, the structure of the switch is relatively simple. Thus, nowadays, the switch is widely used in various fields.
FIG. 8 is a sectional view showing a conventional depression-type switch of this sort. As shown in the drawing, which schematically shows the construction of the switch, the depression-type switch, which is fitted in an opening 20a of a frame 20, includes a key top 11, a rubber spring 12, a coil spring 13 which is provided between the key top 11 and the rubber spring 12, and a membrane switch 14 which is provided underneath the rubber spring 12. The wall portion 12a of the rubber spring 12, which has a bowl-shaped configuration, is deformed (flips over) when pushed in from above by a predetermined amount, thereby generating a tactile click feel. The membrane switch 14 includes a flexible upper sheet 15, an upper electrode 16, which is provided on the lower side of the upper sheet 15, a lower sheet 17, lower electrodes 18 which are provided on the upper side of the lower sheet 17, and a spacer 19 which is provided between the sheets 15 and 17 and which has an opening 19a, the upper and lower electrodes 16 and 18 being capable of being brought into and out of contact with each other within the opening 19a.
In this construction, as the operator pushes in the upper surface of the key top 11 downwardly with the finger, the coil spring 13 is compressed by degrees, with the result that it increases in bounce. When the bounce of the coil spring 13 has reached a certain level, the rubber spring 12 flips over. When the rubber spring 12 flips over, the depressing protrusion 12b thereof pushes in the upper sheet 15 of the membrane switch 14 to thereby deflect it downwards, so that the upper electrode 16 is brought into contact with the lower electrodes 18, whereby the switch is turned on. Further, when the rubber spring 12 flips over, the bounce applied to the key top 11 through the coil spring 13 abruptly decreases, with the result that a tactile click feel is transmitted to the finger of the operator. Even after the rubber spring 12 has thus flipped over, the coil spring 13 can be compressed, so that the operator can further push in the key top by some amount while feeling the bounce increasing by degrees, whereby a satisfactory overstroke can be obtained. In this condition, when the push-in force of the finger applied to the key top 11 is cancelled, the rubber spring 12 is restored to its original bowl-shaped configuration, so that the deflection of the upper sheet 15 is cancelled. Thus, the upper electrode 16 is separated from the lower electrodes 18, thereby restoring the switch to the OFF state. At the same time, the key top 11 is pushed upward to the original height by the restoring force of the coil spring 13 and the rubber spring 12.
A specific example of such a depression-type switch is disclosed in Japanese Patent Laid-Open No. 60-50825, etc.
In the conventional depression-type switch described above, the rubber spring 12 having an appropriate height is mounted on a switch element, such as the membrane switch 14. Further, the coil spring 13 has to be mounted between the rubber spring 12 and the key top 11 so as to be capable of vertically expanding and contracting. Thus, it is rather difficult to form a thin switch whose general height is small. Further, in such a conventional switch, when an end depressing operation is performed by the operator, that is, when a peripheral portion of the upper surface of the key top 11 is depressed, the coil spring 13, which is inclined by such operation, is liable to be compressed unevenly, so that there is a concern that the switch will not operate in the normal fashion.


A master key may be used by each participant in a secure communication. Indeed, each participant may select and encryption key from a distinct end of the master key. To eliminate a necessity for the end points in the secure communication to maintain a master key corresponding to every possible correspondent, the participants may communicate through an encryption server.

In cryptography, encryption is the process of transforming information using an algorithm to make the information unreadable to anyone except those possessing special knowledge, usually referred to as a key. The result of the process is encrypted information.
One applicable encryption method is called one-time pad cryptography. In an implementation of one-time pad cryptography, the one-time pad comprises a random binary bit sequence (e.g., 10101110110). Encryption of any binary data involves using the logical "XOR" operation between the binary data and the one-time pad, thereby leading to encrypted data. At the receiver, the logical XOR operation may be used between the encrypted data and the one-time pad, thereby yielding the original binary data. Notably, one-time pad cryptography is not limited to the use of the XOR operation. Indeed, a variety of operations may be used instead of the XOR operation.

Two indices moving in opposite directions for cryptographic bidirectional communications using a shared master key


Method and apparatus are provided for mapping information from a dynamic frame-based semantic network to a static working memory by utilizing a topological sorting algorithm which processes at least one queue of frames. Preferably, the algorithm is utilized with filtering to avoid unnecessary updates. The algorithm makes a marking pass and an updating pass across the queued frames. The marking pass orders a queue of class frames. The updating pass updates working memory elements of the working memory corresponding to the ordered class frames and working memory elements which correspond to instances of the class. After the updating pass, the working memory elements reflect local and inheritable slots and values from the semantic network. Such mapping allows the working memory elements to be further processed such as by matching against rules.

Artificial intelligence (AI) technology is a discipline with an ultimate goal of providing a machine that is capable of reasoning, making inferences and following rules in a manner believed to model the human mind. Artificial intelligence provides relatively untrained users sophisticated computer power to solve practical problems such as to assist in the analysis of massive amounts of relatively unprocessed data to aid in decision-making processes.
In the field of artificial intelligence, "knowledge" is a combination of data structures and interpretive procedures which, if suitably manipulated, will lead to what might best be termed "knowledgeable" behavior. A knowledge base is a set of knowledge representations which describes a domain of knowledge. A knowledge base is to an artificial intelligence environment what a database is to a conventional computer program. Unlike a database, however, a knowledge base can include executable program material within a defined record herein called a slot. One type or category of representing knowledge is descriptive knowledge. This category is the collection and classification of facts and categorizations about an idea or entity which might be acted upon. The basic units of descriptive knowledge are generally called frames. A frame contains one or more slots.
As used herein, slots embody the attribute, relationship, and procedural information of the object or concept which is being represented. A collection of slots is a frame which is an atomic unit of knowledge. Two types of frames are provided herein: class and instance. A class frame is used to represent a generalized type or category of object. An instance is used to represent a particular member of a class.
Three types of slots are provided herein: attribute, relation, and message. Attribute slots are used to store values (e.g. integer numbers, character strings, etc.). Relation slots are used to store user-defined links between frames in the knowledge base. Message slots are used to store procedural code (i.e. functions) which is executed in response to messages sent to the frame by an application program.
One of the key concepts of artificial intelligence is that of inheritance. It is a development of the idea of using a hierarchical structure for relating frames in a knowledge base. The key to these structures is the concept of connecting relations between structures of data or knowledge through which information about slots may pass to other structures of data or knowledge.
There is a need for an efficient and accurate way to merge a frame-based system such as ROCK with a rule-based system such as TIN so that inheritance of slots and values can occur at runtime rather than at compile time. Knowledge Craft provides an ad hoc approach to inheritance for rule matching which is not particularly efficient or accurate.

Single step mapping in topological order of the queued class and instance frames of a semantic network to a static working memory


A voltage compensation circuit, a multi-level memory device with the same, and a voltage compensation method for reading the multi-level memory device are provided. When a memory cell is read, a reference voltage applied to the memory device is adjusted according to variation of characteristics of a drift resistance of a reference cell. The increased value of the reference voltage (i.e. a voltage difference) corresponds to a resistance variation caused by a drift condition. The drift compensation mechanism is adaptive to a compensation circuit of a read driver of the memory device, which can compensate variation of the voltage level when data is read from the memory cell. When the resistance drift occurs, a drift amount is calculated and is added to the reference voltage, in order to avoid the error in judgement caused by the resistance drift when the stored data is read out.

1. Field of the Invention
The present invention relates to a voltage compensation circuit, a multi-level memory device with the same, and a voltage compensation method for reading the multi-level memory device.
2. Description of Related Art
With development of portable electronic devices, demand for non-volatile memory is gradually increased. Since a phase change memory (PCM) technique has competitive characteristics of speed, power, capacity, reliability, process integration and cost, etc., it is regarded as a most promising next-generation non-volatile memory technique.
Regarding an operation of the PCM, two different currents are applied to the PCM, so that due to an ohm heating effect, different temperature variations of local regions of the PCM can cause a reversible phase transition of an amorphous state and a crystalline state of the phase change material, and such two phase change structures can present different resistances to achieve a purpose of storing data.
To convert the phase change material from the amorphous state to the crystalline state, an electrode of the PCM where the current is applied is suitably heated, so that the phase change material is heated to exceed a temperature to crystallize, and such operation is generally referred to as a SET operation. Similarly, to convert the phase change material from the crystalline state to the amorphous state, a current pulse is suitably applied to the PCM, so that the phase change material is heated to exceed a temperature to melt, and the amorphous state is obtained through a rapid cooling process. Such operation is generally referred to as a RESET operation. Based on the reversible phase transition of the amorphous state and the crystalline state of the phase change material, data storage can be achieved.
FIG. 1 is a schematic diagram illustrating current pulses used for writing and reading a PCM. When the RESET operation of the PCM is performed, a reset current IRESET with a short pulse width and a high pulse height is applied, so that a temperature of a local region of the PCM is higher than a melting temperature (Tm), and the local region is melted. When the melted local region is instantly cooled, since there is no enough time for re-crystallization, the amorphous state of the phase change material is formed during the cooling process, and now the phase change material has a high resistance. On the other hand, when the SET operation of the PCM is performed, a set current ISET with a wide pulse width and a low pulse height is applied, so that a temperature of the local region of the PCM is between a crystalline temperature (TC) and the melting temperature (Tm) of the phase change material, and the amorphous region can be recrystallized after the SET operation.
As described above, the RESET operation and the SET operation of the PCM are equivalent to a write operation and an erase operation of a memory, and a memory effect can be achieved based on a resistance variation generated by operating the PCM between the crystalline state to the amorphous state. When data of the PCM is read, a read current IREAD with a current value less than ISET is applied to determine the resistance, so as to obtain the stored data.
FIG. 2 is a schematic diagram illustrating a conventional SET signal of a PCM. The SET signal includes a first crystallization current pulse ISET1 and a second crystallization current pulse ISET2. The first crystallization current pulse ISET1 has a first current peak IP1, and a hold time of the first current peak IP1 is a first hold time t1. The second crystallization current pulse ISET2 has a second current peak IP2, and a hold time of the second current peak IP2 is a second hold time t2.
Regarding the conventional SET signal, a combination of two different current pulses is used to perform the SET operation. Under a pulse function of the higher first current peak IP1 with a shorter first hold time t1, a local region crystallization of the phase change material is first accomplished. Then, under a pulse function of the lower second current peak IP2 with a longer second hold time t2, a complete crystallization of the phase change material is achieved. According to such operation method of crystallization, a characteristic of stable reliability can be achieved, which also avails improving a uniformity of component distribution.
The aforementioned PCM has advantages of low power consumption, small area and fast operation speed, etc., and regarding a R-ratio of the PCM resistance, RESET is 10M-1M, and SET is 10K, so that R-ratio is 10M-1M/10K, which is closed to 1000-100 times, even reaches 1000 times. Since the R-ratio is great enough, in recent years, the world's major manufactures start to develop multi-level PCMs to replace flash memories. However, in recent published documents, when the PCM is not operated for a period of time, the high-impedance state resistance thereof is increased due to a long idle time, and such characteristic can cause a problem of read error for a multi-level and high-impedance state read operation. Therefore, a compensation mechanism is required to resolve the error in judgement.
A U.S. Patent No. 2008/0266942 provides a multi-level PCM device, in which an operation of pre-reading operation resistance drift recovery can be performed. As shown in FIG. 3A, to compensate the resistance drift, during a write operation, a compensation current ISense of a sensor amplifier circuit (SA) 310 and a recovery current IRecovery of a write driver (WD) 320 are used to perform the write operation to a bit line (BL) through an address selector 330, which is a write mechanism for compensating the resistance drift. As shown in FIG. 3B, the SA 310 is coupled to a phase change random access memory (PRAM) cell array 340 through the address selector 330 and the bit line. A circuit 350 provides a read current to the PRAM cell array 340, and obtains an output voltage to the SA 310 for determination. Therefore, during the write operation, the write current is compensated according to the resistance drift.
A U.S. Patent No. 2009/0016100 also provides a multi-level PCM device. Referring to FIG. 4A, the multi-level phase change memory device includes a main region 410 and a reference region 412 of a memory array region, a sensor amplifier circuit (shown as "SA" in FIG. 4A) 414, a reference voltage generator 416, a write driver (shown as "WD" in FIG. 4A) 418, an input/output buffer 420, a control circuit 422 and an address decoder 424.
As shown in FIG. 4, the reference voltage generator 416 generates a reference voltage Vref to the SA 414 for determination. A method that the reference voltage generator 416 generates the reference voltage Vref is shown as FIG. 4B and FIG. 4C. Original programmed states are 430, 432, 434 and 436, and drifted states are 431, 433, 435 and 437. Regarding reference voltages required by the multi-level PCM, voltages V1, V2, V3 and V4 of reference memory cells (RMC) are directly used to generate new reference voltages Vref1, Vref2, Vref3 and Vref4, and values of the reference voltages Vref1, Vref2 and Vref3 are respectively 1/2(V1+V2), 1/2(V2+V3), 1/2(V3+V4), which are provided to the SA 414 for determination.
Referring to FIG. 5, a U.S. Patent No. 2009/0003033 discloses a read method for a PCM. With respect to charge time of the bit line (shown as "BL" in FIG. 5), in different states, corresponding values of charged voltage of the BL and charge time are different, which has situations of 1-5 nanosecond (ns), and such method is not applied to a multi-level read operation and a compensation application thereof.
A U.S. Patent No. 2008/0316802 discloses a memory device having a drift compensation function and an operation method thereof. Referring to FIG. 6, when a memory array having the drift characteristics is read, a drift condition sensor system first performs a compensation detection, and then the reference voltage is modified according to a detected drift condition, as that shown in FIG. 6. However, in such patent, how to perform the compensation is not described, and a detail circuit thereof is not provided. Moreover, such patent is adapted to a read circuit having a compensation effect.

Voltage compensation circuit, multi-level memory device with the same, and voltage compensation method for reading the multi-level memory device

Industrial Technology Research Institute


A voltage controlled magnetic random memory unit, a memory, and a logic device thereof. The memory unit includes: a ferroelectric layer applied with a first positive or negative voltage to control a directional switching of magnetization; a spin-orbit coupling layer located above the ferroelectric layer and applied with a second voltage to produce a spin current in a direction perpendicular to the spin-orbit coupling layer; a first magnetic layer located above the spin-orbit coupling layer, wherein, the spin current induces a random up and down magnetic switching of the first magnetic layer. The spin current may induce a directional switching of the first magnetic layer in conjunction with the first voltage applied to the ferroelectric layer. The invention generates ferroelectric polarization by applying a voltage to both ends of the ferroelectric layer, thereby generating a non-uniform spin-orbit coupling effect, which can modulate the direction in which the current induces the magnetic switching of the magnetic film.

Information storage and processing technology is an important foundation for the development of contemporary information technology and plays a vital role in the advancement of human society. Magnetic memory has been widely used in the field of information storage with the advantages of non-volatile, storage stability and so on. However, the magnetic memory usually requires the assistance of an external applied magnetic field. This is not conducive to the integration of the memory device, and will restrict the further development of information technology. Controlling a switching of magnetization with an electric field for the information storage and processing is an urgent requirement in the information field.
In the magnetic tunnel junction, the spin transfer torque effect generated by the current and the magnetic material can realize the switching of the moment of the free layer magnetic layer. In this structure, information is written and read on one single channel, and thus reading and writing of information can affect each other. In addition to the spin transfer torque effect, the electrical writing can also be realized by the spin-orbit coupling effect. At this time, the writing current is in the lateral direction, and the reading of information is achieved in the perpendicular direction. The reading and writing of information are implemented on different channels, thus not affecting each other. However, the direction of magnetization cannot be controlled during the writing process.

Voltage control magnetic random storage unit, memory and logic device composed thereby

INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES


A pharmaceutical composition for treating urinary incontinence and/or enuresis, which comprises at least 0.5-20 wt % of a mixture of flavonoids, 2-20 wt % of condensed tannins or proantocyanidins and 0.3-60 wt % of gamma aminobutyric acid (GABA), with respect to the total composition. The composition additionally comprises at least 50% of a Humulus lupulus extract. The composition is used for preparing a medicine for treating incontinence and/or enuresis, in particular enuresis in children, as well as in adults or the elderly who have urine leaks such as incontinence due to stress or urgency.

Urinary incontinence (UI) consists of the involuntary loss of urine at inappropriate moments and in inappropriate places and with sufficient quantity or frequency such that it presents a problem for the individual who suffers with it as well as a possible limitation on their activity and social relations. The person affected has an imperative and sudden need to urinate but is incapable of retaining the urine.
The urine leaks may be caused by involuntary situations such as sneezing, laughing, making some kind of effort or carrying out some kind of physical exercise. The loss of urine is a hygienic, social and mental problem since it influences the daily activity of the sufferer and reduces the quality of life.
It is not a disease itself, rather the consequence of an alteration in the bladder-filling phase, which is associated with numerous diseases. It may be caused by diabetes, cerebrovascular accidents, multiple sclerosis, Parkinson's disease, some surgeries or even during maternity.
Urinary incontinence, in general terms, may be:                Primary: if the child has never been able to control their losses of urine,        Secondary: if, following a period of control, they are unable to regain control,        Diurnal,        Nocturnal,        Mixed: at both times of day, and        Due to stress or effort: in adults from approximately 30 to 60 years.
Furthermore, there are a series of factors which may condition or predispose the patient to suffer from this condition like physical problems such as having a small bladder or weak musculature.
In order to control this situation, in the current prior art, various alternative palliative techniques are used such as pharmacological treatment (Hattori T., Drug treatment of urinary incontinence. Drugs of Today, 1998, 34 (2): 125-138), such as for example the commercial product, Minurin® which contains desmopressin acetate and is used for treating central insipidus diabetes and primary nocturnal enuresis in patients (children older than 5 years) with normal capacity for concentrating urine. However, these therapies usually have some secondary effects since the action mechanism of the desmopressin consists of reducing the amount of urine generated by the kidneys, which is why it is not highly advisable.
Additionally, and fundamentally in the infant population, learning techniques for control, alarm devices (the Mowrer or Pipistop® device) are also employed which are based on the detection of urine to teach the child to relate the sensation of the bladder filling with waking up.
At the same time, urinary incontinence in adults or elderly persons is also known where a loss of bladder control is produced and involves a significant psychological and social impact and may seriously affect the lifestyle of the patient.
Consequently, it is necessary in the current prior art to obtain an efficient pharmaceutical composition for treating this condition, which does not exhibit the secondary effects of the treatments of the prior art and which obtains satisfactory results in preventing infantile enuresis and both infantile and adult incontinence.
In the case of infantile enuresis, there is a need to influence what is a very frequent problem (it affects approximately 5-10% of children of 7 years of age) who regularly urinate in the bed (Bower W F, Moore K H, Shepherd R B, Adams R D. The epidemiology of childhood enuresis in Australia. Br J Urol (1996) 78:602-606) and the problem may persist into adolescence and even, occasionally, into adult life. Young boys are affected more often than young girls and there may be a familial factor. There are three pathogenic mechanisms that have sufficient scientific support to be considered, they are: nocturnal polyuria, nocturnal hyperactivity of the detrusor of the bladder and an elevated threshold to wake up. All of these may depend, in turn, on a common underlying disorder at the level of the cerebral trunk.
The first line of treatment of simple enuresis, that is to say, without underlying factors such as diabetes, kidney disease or urogenital deformations, is the enuresis alarm, which has a definitive curative potential but requires a lot of work and motivation. For this reason, there are many families who cannot adequately carry it out. In these cases, desmopressin may be the selected treatment. Desmopressin poses few risks and adverse effects, however, it may cause hyponatremia which may end up being serious if combined with an excessive intake of liquids (Robson W L, Nørgaard J P, Leung A K Hyponatremia in patients with nocturnal enuresis treated with DDAVP. Eur J Pediatr (1996) 155:959-962). For children who do not respond to the desmopressin, the anticholinergics (oxybutynin, tolterodine and propiverine) are useful as adjuvant therapies (Austin P F, Ferguson G, Yan Y, Campigotto M J, Royer M E, Copien D E. Combination therapy with desmopressin and an anticholinergic medication for nonresponders to desmopressin for monosymptomatic nocturnal enuresis: randomized, double-blind, placebo-controlled trial. Pediatrics (2008) 122:1027-1032). They are not drug which have significant toxicity, however, they may produce or aggravate constipation. Imipramine is a tricyclic anti-depressant which has been used as an antineuritic therapy. The studies present a response rate of approximately 50%. The reason for this effect is not very clear, however, the most likely reason is that it is connected to the cerebral noradrenergic action (Gepertz S, Nevéus T Imipramine for therapy resistant enuresis: a retrospective evaluation. J Urol (2004) 171:2607-2610). Imipramine is only used for treating enuresis resistant to desmopressin since the secondary effects for the most part the changes to mood may be irritating, are frequent and an overdose may pose a risk to life (Varley C K. Sudden death of a child treated with imipramine. Case study. J Child Adolesc Psychopharmachol (2000) 10:321-325).
Lastly, the modalities of alternative treatments, such as acupuncture and hypnotherapy are quite widespread. However, they do not have scientific evidence for their use in order to justify using them as a standard therapy (Glazener C M, Evans J, Cheuk D K. Complementary and miscellaneous interventions for nocturnal enuresis in children. Cochrane Datábase Syst Rev (2005) 18).
In this context, for the present invention, a pharmaceutical composition is provided based on a hops extract (Humulus lupulus) which comprises a therapeutically effective amount of at least gamma aminobutyric acid (GABA), flavonoids such as rutin or condensed tannins as well as other inherent components of the hops extract such as chalcones, α, humulin or lupulin acid.

Pharmaceutical composition for treating urinary incontinence and enuresis


A boost converter circuit which includes elements capable of generating a zero volt switching (ZVS) signal across the power switch. The ZVS generating elements include a switched shunt inductance which is referenced to the positive rectified supply voltage instead of to the output voltage as with other ZVS techniques. This causes a reduction in the inductance value required for generating the ZVS signal, and a resulting reduction in the power loss associated with operation of the converter. The inventive circuit permits operation of the boost converter using high frequency FET devices or slower switching insulated gate bipolar junction transistors as the power switch.

1. Field of the Invention
The present invention relates to switched power supplies, and more specifically, to a circuit for a boost converter which incorporates a switched shunt inductance. The shunt inductance is used to produce a zero volt switching condition across the primary power switch of the power supply. This permits the primary switch to be resonantly switched on with a zero voltage condition in conjunction with a large value for the resonant snubber capacitor. These features reduce the power losses associated with changing the state of the primary switch compared to conventional zero volt switching circuits, and improve the overall efficiency of the converter. The circuit techniques can be applied to continuous and discontinuous boost high power, and high and constant frequency regulators.
2. Description of the Prior Art
Switching or "switch mode" power supplies use a semiconductor device as a power switch to control the application of a voltage to a load. A boost or step-up converter is used to produce an output (or load) voltage which is of the same polarity but a higher voltage than the input voltage (V.sub.in) supplied by the input power supply (not shown). FIG. 1 is a schematic diagram showing a basic circuit for a prior art boost converter 100. The operation of power switch Q2 102 is controlled by applying a waveform to gate node 103. When switch Q2 is turned "on", i.e., conducting, the input voltage V.sub.in is applied across primary inductor L 104. Under steady-state conditions, the current (I) in inductor L will increase linearly with time to a peak value as energy from the input supply is stored in its magnetic core, as described by the relationship V=L dI/dt. Rectifier D1 106 will be reversed biased and thus not conducting. In addition, under steady-state conditions, current will flow from output capacitor C.sub.0 108 to the load attached across the output terminals of boost converter 100 as a function of the output voltage (V.sub.out). This causes the output capacitor to discharge.
When switch Q2 is turned "off", i.e., not conducting, current is no longer supplied by the input supply to inductor L. The inductor attempts to compensate for this change by causing the voltage across the inductor to increase, raising the potential at node A. This keeps the current in L flowing in the same direction as before. When the voltage at node A exceeds the sum of the output voltage across C.sub.0 and the diode drop across diode D2, rectifier D2 becomes forward biased and hence conducting. This transfers the current in inductor L to output capacitor C.sub.0 and the load. Since the output voltage is greater than the supply voltage, inductor L becomes reverse-biased and the current in it decays linearly downward to its original value. Power switch Q2 is then turned back on to start another cycle. Just before being turned on, the voltage across the power switch is greater than the input voltage, V.sub.in. As the power switch is turned on, the voltage falls and current through the switch increases, resulting in a loss of power. The output voltage, V.sub.out, is determined by the duty ratio of power switch Q2 and the supply voltage, V.sub.in, according to the following formula: EQU V.sub.out =V.sub.in /(1-D),
where D is the duty ratio of the switch and is defined as t.sub.on /(t.sub.on +t.sub.off), with t.sub.on being the "on" time of the switch during a cycle and t.sub.off being the "off" time during a cycle.
A drawback of switch mode power circuits as above described is that the switching devices in such switch mode power converters are subjected to high stresses and potentially high switching power loss as a result of the switch being changed from one state to another while having a significant voltage across it. These effects increase linearly with the switching frequency of the waveform used to control the power switch. Another drawback of switched power circuits is the electromagnetic interference arising from the large dI/dt and dV/dt that occurs when the switch changes state.
The noted disadvantages of switch mode power converters can be reduced if each power switch in the circuit is caused to change its state (from "on" to "off" or vice versa) when the voltage and/or current through it is zero or at a minimum. Such a control scheme is termed "zero-voltage" and/or "zero-current" switching. In the case of switching at a minimum voltage, the control scheme is termed "low-voltage" switching. It is thus desirable to switch the power switching device(s) at instances of zero or minimum voltage in order to reduce stress on the switch(es) and power loss of the power supply or converter. This increases the efficiency of the power supply or converter.
One method of implementing zero voltage switching is to provide a voltage signal across the power switch which passes through a zero value. This can be done by connecting a resonant network (typically an inductor and a capacitor) to the power supply circuit. The network acts to smooth the output signal of the power supply and provide a back emf across the power switch in the form of a sinusoidally varying waveform. The resonant elements are arranged so that the back emf waveform generates a zero crossing voltage signal across the power switch while the switch is off. This provides a zero-voltage or zero-current condition through the power switch which can be used to define the desirable switching point(s) for turning the switch on.
FIG. 2 is a schematic drawing of the boost converter of FIG. 1 to which has been added an LC resonant network to provide a zero volt switching condition. As is shown in the figure, a resonant capacitor C.sub.res 110 is connected across power switch Q2 and a resonant inductor L.sub.res 112 is connected between C.sub.res and rectifier D2. When switch Q2 is on, the operation of the circuit of FIG. 2 is the same as that described for the boost converter of FIG. 1. No current flows through L.sub.res because rectifier D2 is not conducting.
When switch Q2 is off, current is transferred from primary inductor L to C.sub.res, charging the capacitor. After C.sub.res becomes charged, the potential at node A increases until it exceeds the output voltage across C.sub.0. At this point, rectifier D2 becomes forward biased and hence conducting. This transfers current from inductor L to L.sub.res and into output capacitor C.sub.0 and the load. As the current in L declines, the current being forced into L.sub.res also declines. L.sub.res responds by pulling charge from capacitor C.sub.res, L.sub.res and C.sub.res form a resonant circuit which produces a sinusoidally changing voltage signal across switch Q2, providing a zero crossing signal which can be used to define the desired switching point.
FIG. 3 is a schematic drawing of a boost converter to which has been added an LC resonant network which is shunted to a ground reference by the action of a second switch Q1 118. In FIG. 3, inductor L.sub.res 112, is connected to ground via an amorphous core 111, an active switch Q1, and diode 114. There is a shunt path around switch Q1 to ground formed by a resistor 117 and a diode 115.
Amorphous core 111 is typically required, with a ground reference for switch Q1 because after the energy in inductor 112 is put back into output capacitor 108 via diode 116, the current in inductor 112 will turn off and can swing the voltage on the junction between inductor 112 and the cathode of diode 115 to ground, causing diode 115 and resistor 117 to conduct continuously. Resistor 117 allows any residual energy in L.sub.res to dissipate quickly.
FIGS. 4(A) to 4(F) are timing diagrams illustrating the operation of the boost converter of FIG. 3. FIG. 4(A) shows the current in inductor L.sub.res 112, indicating that the current builds up to the level of that in diode 106 (I.sub.D2) which has been conducting during the period t.sub.0 to t.sub.1 after the grounded shunt switch Q1 is turned on at t.sub.0, as shown in FIG. 4(E), which illustrates the gate drive signal for Q1. After time t.sub.1 the current continues to build up in inductor 112 as the voltage on switch Q2, (shown in FIG. 4(C)) and the voltage at node 119 change in a resonant manner to discharge capacitor C.sub.res 110 during the period between t.sub.1 and t.sub.2.
At time t.sub.2, diode 101, which is connected in parallel with switch Q2 102, conducts, as the energy in L.sub.res is clamped since there can be no further voltage change on C.sub.res. The level of this reverse current corresponds to the build up of current above the main load current in inductor 104, which occurs because, during the period t.sub.1 to t.sub.2, the voltage across L.sub.res 112 is positive and therefore stores extra energy during this period. Initially all the current in L.sub.res 112 will conduct in body diode 101, but this changes as the current from main inductor L 104 equalizes part of the current. The main drive signal to switch Q2 102 (shown in FIG. 4(F)) will start soon after t.sub.2, with a propagation delay of approximately 50 to 70 nanoseconds. The gate drive to switch Q1, (shown in FIG. 4(E)) is terminated at t.sub.3. Switch Q1 is required to switch a large current (see V.sub.-- Turnoff in FIG. 4(B) and I.sub.-- Turnoff in FIG. 4(A)), which creates both a noisy and lossy situation. The turnoff for shunt switch Q1 cannot be extended because the voltage across inductor L.sub.res 112 during the period between t.sub.2 and t.sub.3 is very small since both Q1 and Q2 are clamped to Ground, causing the reduction in current, -DI/DT (shown in FIG. 4(A)), to be very slow. If the shunt switch Q1 was not turned off but instead kept on, the current would staircase up in L.sub.res until saturation occurred.
The amount of excess energy stored in inductor L.sub.res 112, is sent to output capacitance C.sub.0, 108, via diode 116, as illustrated by the hatched area of FIG. 4(A). FIGS. 4(A) and 4(B) further illustrate the current decrease in L.sub.res (4(A)) and the recovery of the voltage on switch Q1 (4(B)), between t.sub.3 and t.sub.4. As can be seen from FIG. 4(B), the voltage on switch Q1 can reverse, and amorphous core 111 is used to prevent this from occurring.
In Zero Voltage Switching (ZVS) power converters, during each switching cycle the voltage across the power switch is driven to zero by the action of the inductive load, and ideally, the switch is then turned on. This typically requires that ZVS Resonant converters have a large LC tank to ensure that there is sufficient inductive energy to drive the voltage across the switch to zero. However, a disadvantage of this means of providing a zero voltage signal across the power switch is that there is significant power loss associated with the large intrinsic resistance of the resonant network capacitance and inductance, with the power loss being approximately proportional to the values of those elements. This reduces the efficiency of the converter.
What is desired is a boost converter circuit which is capable of zero voltage power switch operation, where the circuit elements responsible for the zero voltage switching produce a lower power loss than presently available devices.

Offset resonance zero volt switching boost converter


The present application for patent relates to a light-sensitive positive working photosensitive composition especially useful for imaging thick films using a composition which gives very good film uniformity and promotes a good process latitude against feature pattern collapse in patterns created upon imaging and developing of these films.

Photoresist compositions are used in microlithography processes for making miniaturized electronic components such as in the fabrication of integrated circuit devices. Generally, in these processes, a coated film of a photoresist composition is applied to a substrate such as silicon wafers used for making integrated circuits, circuit boards and flat panel display substrates. The coated substrate is then baked to evaporate any solvent in the photoresist composition and to fix the coating onto the substrate. The baked coated surface of the substrate is next subjected to an image-wise exposure to actinic radiation.
This actinic radiation exposure causes a chemical transformation in the exposed areas of the coated surface. Visible light, ultraviolet (UV) light, extreme ultraviolet (EUV), electron beam and X-ray radiant energy are radiation types commonly used today in microlithographic processes. After this image-wise exposure, the coated substrate is treated with a developer solution to dissolve and remove either the radiation-exposed areas (for positive-type photoresists) or the unexposed areas (for negative-type photoresists) of the coated surface of the substrate.
After this development operation, the now partially unprotected substrate may be treated with a substrate-etchant solution, plasma gases or reactive ions, or have metal or metal composites deposited in the spaces of the substrate where the photoresist coating was removed during development. The areas of the substrate where the photoresist coating still remains are protected. Later, the remaining areas of the photoresist coating may be removed during a stripping operation, leaving a patterned substrate surface. In some instances, it is desirable to heat treat the remaining photoresist layer, after the development step and before the etching step, to increase its adhesion to the underlying substrate.
In the manufacture of patterned structures, such as wafer level packaging, displays, light emitting diode applications or microelectromechanical systems, electrochemical deposition of electrical interconnects has been used as the interconnect density increases. For example, see Solomon, Electrochemically Deposited Solder Bumps for Wafer-Level Packaging, Packaging/Assembly, Solid State Technology, pages 84-88, April 2001. Gold bumps, copper or other metal posts and copper traces for redistribution in wafer level packaging require a photoresist mold that can later be electroplated to form the final metal structures in advanced interconnect technologies. The photoresist layers are very thick compared to the photoresists used in the IC manufacturing of critical layers. Both feature size and photoresist thickness are typically in the range of 2 μm to 100 μm, (micrometers) so that high aspect ratios (photoresist thickness to line size) have to be patterned in the photoresist.
Positive-acting photoresists comprising novolak polymers and quinone-diazide compounds as photoactive compounds dissolved in conventional spin casting solvent such PGMEA or PGME are well known in the art. Novolak polymers may also be reacted with quinone diazides and combined with a polymer. It has been found that photoresists based on only novolak/diazide do not have the photosensitivity or the steepness of sidewalls necessary for certain type of processes, especially for very thick films. Moreover a high dark-film loss in the developer is often observed and such coating may have poor coating uniformity.
Known chemically amplified photoresists, such as those based on blocked poly-4-hydroxystyrene (PHOST), blocked copolymers comprising hydroxystyrene and a blocked (meth)acrylic acid repeat unit such as tert-butyl (meth)acrylate, or (meth)acrylic materials comprising alicyclic groups, acid cleavable groups, and dissolution modifying groups such as anhydrides or lactones dissolved in conventional spin casting solvent such PGMEA or PGME as may exhibit the required photosensitivity and thickness requirement, but may also exhibit adhesion failure, during subsequent unit operations such as plating or etching. Moreover, these materials may also exhibit poor coating uniformity and also have poor process latitude against pattern collapse during unit. Such failures may lead to feature sidewalls that are rough, undercut or have protrusions somewhere in the metal feature and produce features with high defect counts because of the lack of process latitude against pattern collapse and poor coating uniformity. Moreover, these photoresists may be prohibitively expensive.
Chemically amplified resist comprising mixtures of novolak polymers with polymers based on blocked poly-4-hydroxystyrene (PHOST), blocked copolymers comprising hydroxystyrene and a blocked (meth)acrylic acid repeat unit such as tert-butyl (meth)acrylate, or (meth)acrylic materials comprising alicyclic groups, acid cleavable groups, and dissolution modifying groups such as anhydrides or lactones dissolved in conventional spin casting solvent such PGMEA or PGME as may exhibit the required photosensitivity and thickness requirement, but may also exhibit adhesion failure, during subsequent unit operations such as plating or etching. Moreover, these materials may also exhibit poor coating uniformity and also have poor process latitude against pattern collapse during unit. Such failures may lead to feature sidewalls that are rough, undercut or have protrusions somewhere in the metal feature and produce features with high defect counts because of the lack of process latitude against pattern collapse and poor coating uniformity.
Therefore, there remains a need for a positive photoresist material that give good thick film coating uniformity, exhibits high photosensitivity with good process latitude against pattern collapse, even in thick film applications, requires process worthy development times, exhibits low dark film loss in developers and basic plating solutions, and withstands wet plating and etching operations to produce features that have smooth side walls. The present disclosure and the accompanying claims address these needs.
These novel compositions are also suited for imaging on reflective and chalcophilic substrates that produces low defect, images at high resolution.

Positive working photosensitive material


Methods are provided for semantic processing of data files including detecting formats of data embedded in the data files and converting the data to formats compatible with a data analysis tool. The method may comprise determining if the data file comprises signature characteristics associated with a known data format and, if so, determining a set of data manipulation operations associated with the known data format to convert the data file to a compatible format for the data analysis tool. The method may further comprise semantically analyzing components of the data files to assess formatting across a required set of criterions needed by the data analysis tool and determining sets of data manipulation operations to perform to convert the data file to a compatible format.

Traditional audits of financial data are a very manual process which requires significant time exerted by accounting professionals. The accountants involved in an audit will typically sample the financial data and attempt to isolate data sets and transactions that could potentially highlight an increased risk of improper activities or accounting practices. The isolated transactions may lead to questions for the business that generated the transactions to determine if the transactions abide by Generally Accepted Accounting Principles (GAAP) and whether there are issues related to improper process, data entry or potentially intentional manipulation or fraud. Key problems with traditional audits are that they require significant high cost professional labor to rigorously review financial data and typically only a very small sample of the financial data is reviewed. Unless a full forensic audit is conducted, sampling of the financial data is limited which reduces the potential to identify and isolate the transactions with the highest risk of improper activities.
Recently, data analysis tools have been developed to assist accounting professionals with audits of financial data, herein referred to as audit assistance systems. These audit assistance systems can be used to review large amounts of financial data to identify anomalies in the transactions that may require closer analysis by an accounting professional. This two-stage process can reduce the amount of brute force labor required to review the financial data and can allow the accounting professionals to focus their energy on the transactions identified as the highest risk of improper activities.
In order to properly operate, the audit assistance software systems require the financial data to be formatted in a specific manner so the software understands the accounts each transaction belongs to and the interactions between the various transactions in the financial data. Unfortunately, businesses use a wide range of accounting systems for managing their financial data and those inputting the data into these accounting systems may use a wide range of processes, nomenclature and database management techniques to enter the data. The accounting systems used by businesses to manage financial data may be off-the-shelf programs with relatively standard data formatting systems or may be custom built programs with proprietary data formatting systems. Further, the accounting systems used may only allow for an incomplete set of data to be export for analysis. Yet further, the sheer fact that a large portion of the financial data is entered by humans means that the entry of the data may not be consistent over time or across users.
Prior to being processed by an audit assistance software system, financial data may be reviewed by a database professional and modified to enable the software system to properly understand the transactions and the interactions between transactions that make up the financial data. This manual process can be significantly time consuming and cost prohibitive and, since it is limited by the skills of the database professional, the resulting format of the financial data may still not be sufficient to be processed successfully by the audit assistance software system.
Against this background, there is a need for solutions that will mitigate at least one of the above problems, particularly an improved system for shaping data prior to a data analysis tool.

Method and apparatus for shaping data using signature recognition


A management device includes: a determiner that, in a plurality of storage area pools each of that has a configuration including a plurality of storage devices, determines a storage area pool into that a spare storage device is incorporated for adding an area storing data; and a manager that incorporates the spare storage device into the determined storage area pool.

As a required amount of data increases, number of storage devices such as Hard Disk Drive (HDD) and Solid State Drive (SSD) that are used in an information processing system increase, and a storage capacity of each storage device increase. As increase of the above-mentioned number and capacity, an art of Redundant Arrays of Inexpensive Disks (RAID) is used when using the storage device such as HDD or the like in order to improve reliability and access performance of the storage device. According to RAID, it is possible to restore data that are held by a failed storage device (refer to, for example Japanese Patent Application Laid-Open Publication No. 2007-241837 (hereinafter, denoted as PTL (Patent Literature) 1), Japanese Patent Application Laid-Open Publication No. 2004-171373 (hereinafter, denoted as PTL 2), and Japanese Patent Application Laid-Open Publication No. 2010-128773 (hereinafter, denoted as PTL 3)).
The invention of PTL 1 is an invention to identify a failed storage device out of storage devices that compose a rank in RAID.
The invention of PTL 2 is an invention to detect a sign of failure in a physical disk device and to exchange a memory disk relating the physical disk.
The invention of PTL 3 is an invention to identify a disk having a high possibility that a failure occurs by using Self-Monitoring Analysis and Reporting Technology (SMART) in hard disk devices.
However, since the capacities of HDDs and SSDs enlarge, a time for restoring data is prolonged. Then, an art to reduce a restoration time is proposed (refer to Japanese Patent Application Laid-Open publication No. 2016-038767 (hereinafter, denoted as PTL 4)).
According to the invention of PTL 4, a storage area pool (POOL) that is a combination of physical storage devices (Physical Storage Device (PD)) is constructed. Furthermore, according to the invention of PTL 4, when constructing the storage area pool, a storage device for an area of data (an unused area in a job), volume of which will become vast in the future, is incorporated in each storage area pool. That is, according to the invention of PTL 4, a spare storage device (Spare Storage Device (SD)) is incorporated in each storage area pool as a spare area.
In the case of a normal process, access to data in the unused area is not generated. That is, the unused area has no contention with the normal process. Then, according to the invention of PTL 4, when restoring the data, the restoration time is shortened by using the unused area that is incorporated in the storage area pool in advance.

Determination of storage area pool into which to incorporate spare storage device


A system and method for implementing a serial RAID system. Data is striped for the array of disk drives and parity for the striped data is calculated and the resulting data and is written serially to a RAID system over a Fibre Channel or other type of network. The system also allows reading of the striped data and parity serially from the disk array.

As computer systems have advanced, the instructions-per-second rate has dramatically increased. Disk drive performance has not been able keep up with computer technological progress. I/O bottlenecking results from a disparity between computer system speed and disk access speed. Another concern with disk storage is its reliability. In 1987, a system was introduced to alleviate the concerns of I/O performance and data reliability. This system, called RAID, for Redundant Array of Inexpensive Disks, consists of several methods of writing data to an array of common disks. The third method, called RAID-3, stripes (i.e., interleaves) words of data across the parallel array of drives as well as stores parity data on the array. RAID-3 is useful for transfers of larger blocks of data. The fifth method, called RAID-5, stripes sectors of data across the drives. RAID-5, like RAID-3 stores parity data, however on a RAID-5 system, the parity data is interleaved among all the drives rather than being written to a disk drive dedicated to parity data. See, David A. Patterson, Garth Gibson, Randy H. Katz, "A Case for Redundant Arrays of Inexpensive Disks (RAID)," University of California at Berkeley, Report No. UCB/CSD 87/391, December 1987! The parallellism of the disk array allows writes to be done simultaneously, thus the increase in disk performance.
A parallel array of disk drives has disadvantages. The primary disadvantage is that each disk drive requires a separate I/O channel. Thus, for an array of five disk drives (called a 4+1 array, indicating 4 drives dedicated to data storage and one for parity), five disk drive I/O channels must be implemented. The need for a separate channel for each disk drive increases the cost of implementing RAID systems. What is needed is a way to get the benefits of a disk array without the cost of allocating a channel to each disk drive.

Raid system using I/O buffer segment to temporary store striped and parity data and connecting all disk drives via a single time multiplexed network