An optical pickup device and an optical recording and reproducing apparatus are suitable for use with a near-field optical recording and reproducing system. An optical pickup device comprises an objective lens composed of a solid immersion lens (SIL) the objective lens having a numerical aperture greater than 1, a beam splitter configured to reflect both of a p-polarized light component and an s-polarized light component of reflected lights from an optical recording medium when the optical pickup device irradiates the optical recording medium with a bundle of rays in a predetermined polarized state from a light source through the objective lens, a divider configured to divide incident light into a p-polarized light component and an s-polarized light component reflected by the beam splitter, and a photo-detector configured to separately detect the p-polarized light component and the s-polarized light component divided by the divider.

1. Field of the Invention
The present invention relates to an optical pickup device, and an optical recording and reproducing apparatus including this optical pickup device (this optical recording and reproducing apparatus contains a magneto-optical recording and reproducing apparatus) and a gap detection method, and more particularly to an optical pickup device, an optical recording and reproducing apparatus and a gap detection method for use with a so-called near-field optical recording and reproducing system for recording and/or reproducing an optical recording medium while an optical lens is increasing its numerical aperture.
2. Description of the Related Art
Optical recording mediums, which are typically available in the form of a compact disc (CD), a mini disc (MD) and a digital video disc (DVD), have been so far widely used as storage mediums for storing therein music information, video information, data, programs and the like ("optical recording medium" in this specification refers to not only the optical recording medium but also a "magneto-optical recording medium").
These optical recording mediums can be recorded and/or reproduced by laser beams irradiated on the signal recording surface of the optical recording medium from the optical pickup device. Specifically, when the optical recording medium is reproduced by an optical pickup device according to the related art, for example, very small changes of reflectance are read out from pits formed on one side of the optical recording medium through a non-contact objective lens, which is not in contact with the optical recording medium, such as an objective lens of a microscope. In the magneto-optical detection, miniscule magnetic domains are read out from the magneto-optical disk based upon a Kerr rotation angle.
The diameter of beam spot on the optical disk is roughly given by λ/NA (where λ represents the wavelength of illumination light and NA represents the numerical aperture of the lens), and resolution is proportional to the value given by this equation. With respect to the numerical aperture NA, the following equation is established:NA=n·sin θ(where n represents the refractive index of the medium and θ represents the angle of rays of light around the objective lens).
When the medium is air, the numerical aperture NA is inhibited from exceeding 1. As a technology that can surpass this limit, there has been proposed an optical pickup device of a near-field optical recording and reproducing system using "solid immersion lens (see the following non-patent document 1).
The solid immersion lens (SIL) has the same refractive index as that of an optical disk substrate, and is shaped like a part of a sphere including a spherical surface portion and a flat surface portion, the flat surface portion thereof being very close to the surface of the optical recording medium. Evanescent wave transmits through the boundary surface between the solid immersion lens and the optical disk, and this evanescent wave reaches the signal recording surface of the optical disk.
Non-Patent Document 1:
I. Ichimura et. al, "Near-Field Phase-Change Optical Recording of 1.36 Numerical Aperture." Jpn. J. Appl. Phys. Vol. 39, 962-967 (2000)
Since it is customary for the above-mentioned optical pickup device to read an information signal from the optical disk while the optical disk is being rotated, the optical disc and the solid immersion lens have to require a gap (space) therebetween. Therefore, the evanescent wave should be used in order to achieve the numerical aperture NA greater than 1. Since the evanescent wave attenuates exponentially from the interface, the gap between the optical disk and the solid immersion lens should be made extremely thin, i.e., approximately 10/1 of the wavelength λ of light from the light source of the optical pickup device, for example. Moreover, in order to reduce the area of the gap, the gap has to approach the signal recording surface of the optical disk.
As a method for controlling the above gap, there has hitherto been proposed a method for servo-controlling a distance (gap) between a solid immersion lens and an optical disk based upon a gap error signal after the gap error signal has been obtained by detecting an electrostatic capacity between an electrode formed on the surface of the solid immersion lens and the optical disk.
However, in order to execute this previously-proposed method, the electrode has to be formed on the surface of the solid immersion lens and a signal line has to be led from this electrode to a control circuit so that the optical pickup device becomes complex in arrangement, and hence it becomes difficult to manufacture the optical pickup device.
On the other hand, in the mastering process of the optical disk, the assignee of the present application has previously proposed a method for using returned light detected from a glass master disk as a gap error signal (see Japanese patent application No. 10-249880).
When the solid immersion lens and the glass master disk have no gap therebetween, the surface of the solid immersion lens is in contact with the transparent photoresist on the glass master disk, and hence no light is returned from the surface of the solid immersion lens. Conversely, when the solid immersion lens and the glass master disk have the gap therebetween, light that has been totally reflected on the surface of the solid immersion lens is returned. The above previously-proposed method is able to detect the gap between the solid immersion lens and the glass master disk by using this returned light.
However, this previously-proposed method can be used only when the master disk is made of glass and the photoresist for use in exposure is transparent. If the master disk has a reflective film such as an aluminum film, a phase-change film and a magneto-optical recording film deposited on its surface like an optical disk, then even when the solid immersion lens and the master disk have no gap therebetween, light is reflected on the surface of the optical disk and no light is returned. Hence, this previously-proposed method cannot be used.
In order to solve the above-mentioned problem, the assignee of the present application has previously proposed an optical pickup device that can accurately detect a very small gap between an optical disk with a reflective film deposited on its surface and a solid immersion lens (see Japanese patent application No. 2001-264467).
The above previously-proposed optical pickup device will be described below with reference to the drawings.
FIG. 1 of the accompanying drawings is a side view showing an arrangement of an example of this optical pickup device.
As shown in FIG. 1, the optical pickup device includes an objective lens 2 composed of a solid immersion lens (SIL) 1 having a spherical portion and a flat surface portion parallel to the surface of an optical recording medium 90 to form a part of a shape of a sphere, the objective lens 2 having a numerical aperture greater than 1. The solid immersion lens 1 is shaped like a hemisphere, for example, and has a thickness substantially equal to the radius of the sphere. A distance (gap) between the flat surface portion of the solid immersion lens 1 and the surface of the optical recording medium 90 can be held at approximately 10/1 of the wavelength of light emitted from a semiconductor laser 3 serving as a light source under control of a servo mechanism which will be described later on.
This optical pickup device is able to obtain a gap error signal corresponding to a distance between the surface of the optical recording medium 90 and the flat surface portion of the solid immersion lens 1 by detecting a component of the polarized state perpendicular to the polarized state of reflected light obtained when the surface of the optical recording medium 90 and the flat surface portion of the solid immersion lens 1 have no gap therebetween from reflected lights (returned lights) reflected on the optical recording medium 90 after they have been emitted from the semiconductor laser 3.
Specifically, in this optical pickup device, a bundle of rays emitted from the semiconductor laser 3 is collimated by a collimator lens 4 as a bundle of parallel rays and introduced into a beam splitter 5. A bundle of rays emitted from the semiconductor laser 3 has a wavelength of 400 nm, for example. A bundle of rays emitted from the semiconductor laser 3 transmits through the beam splitter 5 and becomes incident on a polarization beam splitter 6. A bundle of rays emitted from the semiconductor laser 3 is a p-polarized light relative to the reflection surface of the polarization beam splitter 6, and hence it transmits through the reflection surface of the polarization beam splitter 6, whereafter it transmits through the polarization beam splitter 6.
A bundle of rays that has transmitted through the polarization beam splitter 6 transmits through a λ/4 plate (quarter-wave plate) 7 with its crystallographic axis inclined at an inclination angle of 45° relative to the direction of the incident polarized light, by which it is double-refracted so as to become circularly polarized light and the circularly polarized light is introduced into an objective lens 8 comprising the condenser lens 2 together with the solid immersion lens 1. A bundle of incident parallel rays is converged by this objective lens 8 and introduced into the solid immersion lens 1. This solid immersion lens 1 has a focal point formed near a parallel portion disposed parallelly close to the surface of the optical recording medium 90. A refractive index of the solid immersion lens 1 is selected to be 1.8, for example.
A bundle of the thus converged rays is converged on the signal recording surface of the optical recording medium 90 as evanescent wave. In this case, the objective lens 2 has an NA (numerical aperture) of approximately 1.36, for example.
The optical pickup device shown in FIG. 1 is constructed as the optical pickup device capable of reproducing either an optical disk on which an information signal is recorded by recording pits (concavities and convexities) or a recordable optical disk on which an information signal is recorded by using phase-change. Specifically, a bundle of rays that has been converged on the signal recording surface of the optical recording medium 90 is reflected in various manners with or without application of the recording pits on this signal recording surface and returned to the polarization beam splitter 6 through the objective lens 2 and the quarter-wave plate 7.
A bundle of rays returned to the side of the condenser lens 3 after it has been reflected on the surface of the optical recording medium 90 is introduced into the quarter-wave plate 7, in which it is double-refracted in the form of circularly polarized light to linearly polarized light. At that time, the direction of polarized light is normal to the direction of polarization of a bundle of rays emitted from the semiconductor laser 3. Accordingly, a bundle of rays returned after it has been reflected on the surface of the optical recording medium 90 is s-polarized light relative to the reflection surface of the polarization beam splitter 6 and thereby reflected on the reflection surface of the polarization beam splitter 6 so that it is deviated from the light path along which it may return to the semiconductor laser 3, thereby being received at a first photo-detector 9 which is used to obtain a reproduced signal from the optical recording medium 90.
According to this optical pickup device, on the surface A between the beam splitter 5 and the polarization beam splitter 6, a bundle of rays emitted from the semiconductor laser 3 is linearly polarized light containing only an electric field component of X direction as shown in FIG. 2A but which does not contain an electric field component of Y direction as shown in FIG. 2B.
Then, in the state in which the flat surface portion of the solid immersion lens 1 is in close contact with the surface of the optical recording medium 90, this flat surface portion is in close contact with a phase-change recording and reproducing multilayer film (composed of Al film, SiO2 film, GeSbTe film, SiO2 film deposited on the substrate, in that order) deposited on the surface of the optical recording medium 90 as shown in FIG. 3A or a reflective film made of a suitable material such as aluminum (Al film deposited on a substrate) deposited on the surface of the optical recording medium 90 as shown in FIG. 3B.
As described above, in the state in which the flat surface portion of the solid immersion lens 1 is in close contact with the surface of the optical recording medium 90, most of reflected light is inwardly and outwardly transmitted through the quarter-wave plate 7 and thereby the reflected light is double-refracted so as to have the direction of polarization rotated 90° so that a bundle of rays with a distribution substantially equal to that of light emitted from the semiconductor laser 3 may become incident on the surface B that is the surface just ahead of the first photo-detector 9 as shown in FIG. 4A. At that time, as shown in FIG. 4B, reflected light is hardly returned from the optical recording medium 90 to the surface A between the beam splitter 5 and the polarization beam splitter 6.
Then, in the state in which the solid immersion lens 1 is away from the optical recording medium 90, as shown in FIG. 5, of light beams converged near the flat surface portion of the solid immersion lens 1, a light beam that will become incident on the flat surface portion at an incidence angle greater than a critical angle in this flat surface portion is reflected on the flat surface portion ((refractive index of solid immersion lens)×sin (incidence angle)>1).
In the thus reflected light, its direction of polarization is rotated delicately when it is totally reflected. The light beam that has been totally reflected as described above contains a polarized light component perpendicular to the reflected light obtained in the state in which the flat surface portion of the solid immersion lens 1 is in close contact with the surface of the optical recording medium 90 as described above. As a result, a distribution of the returned light on the surface A between the beam splitter 5 and the polarization beam splitter 6 becomes a distribution in which only light beams at the portions corresponding to the marginal portions of a bundle of rays are returned as shown in FIG. 6A.
The light beam that has returned to the surface A as described above is reflected on the reflection surface of the beam splitter 5 and received at a second photo-detector 10 which is used to obtain a gap error signal as shown in FIG. 1. This gap error signal is a signal corresponding to a distance between the flat surface portion of the solid immersion lens 1 and the optical recording medium 90.
Then, at that time, a distribution of the returned light beam on the surface B located just ahead of the first photo-detector 9 becomes a distribution in which returned light beams at the portions corresponding to the marginal portions of a bundle of rays are missed.
In a relationship between a quantity of light received at the second photo-detector 10 and the distance (air gap) between the flat surface portion of the solid immersion lens 1 and the surface of the optical recording medium 90, this distance (air gap) can be held at 10/1 of the wavelength by controlling the position at which the solid immersion lens 1 comes in contact with or comes away from the optical recording medium 90 in such a manner that the quantity of light at the second photo-detector 10, for example, may be kept at the ratio of quantity of incident light of 0.2 as shown in FIG. 7.
When the optical recording medium 90 is a magneto-optical disk, an optical pickup device having an arrangement shown in FIG. 8, for example, can be applied to this example. Specifically, as shown in FIG. 8, a bundle of rays emitted from the semiconductor laser 3 is converged on the signal recording surface of the optical recording medium 90 through the collimator lens 4, the polarization beam splitter 6, the beam splitter 5, the condenser lens 8 and the solid immersion lens 1. In this optical pickup device, a quarter-wave plate is not provided on the outward light path to the optical recording medium 90.
Then, the returned light beam that has been reflected on the optical recording medium 90 is divided by the beam splitter 5, whereafter it is refracted by a λ/2 plate (half-wave plate) 11 (i.e., polarization filter) so that its direction of polarization is rotated 45° and introduced into a second polarization beam splitter 12. This half-wave plate 11 is disposed with its optical axis inclined 22.5° relative to the direction of incident linearly polarized light.
The light beam that became incident on the second polarization beam splitter 12 is divided in response to a Kerr rotation angle generated based on a magneto-optical effect when it is reflected on the signal recording surface of the optical recording medium 90, and it is received at the first and second photo-detectors 13 and 14, both of which are used to obtain a magneto-optical signal. A difference signal between outputted signals from the first and second photo-detectors 13, 14 is not generated when a bundle of reflected rays does not generate the Kerr rotation angle and becomes an output corresponding to the Kerr rotation angle generated in a bundle of reflected rays, which becomes a magneto-optical signal.
Then, a bundle of rays that has returned from the flat surface portion of the solid immersion lens 1 in order to obtain the gap error signal is returned through the beam splitter 5 to the polarization beam splitter 6. Then, it is reflected by this polarization beam splitter 6 and received at the third photo-detector 10 that is used to obtain the gap error signal.
When the optical recording medium 90 is the magneto-optical disk, the optical pickup device may be modified as an optical pickup device having an arrangement shown in FIG. 9, for example. Specifically, as shown in FIG. 9, a bundle of rays emitted from the semiconductor laser 3 may be converged on the signal recording surface of the optical recording medium 90 through the collimator lens 4, the beam splitter 5, the condenser lens 8 and the solid immersion lens 1.
The light beam that has been irradiated on the signal recording surface of the optical recording medium 90 in this manner is reflected on this signal recording surface and reflected on the beam splitter 5, whereafter it is further divided by the second beam splitter 15 into two bundles of rays. A bundle of rays that has passed the second beam splitter 15 is transmitted through the half-wave plate 11 and thereby its direction of polarization is rotated 45°, whereafter it is introduced into the polarization beam splitter 12. This half-wave plate 11 is located such that its optical axis is inclined at an inclination angle of 22.50 relative to the direction of incident linearly polarized light.
The light beam that has been introduced into the polarization beam splitter 12 is divided in response to the Kerr rotation angle generated by the magneto-optical effect when it is reflected on the signal recording surface of the optical recording medium 90 and received at the first and second photo-detectors 13 and 14 which are used to obtain the magneto-optical signal. A difference signal between the outputted signals from the first and second photo-detectors 13, 14 is not generated when a bundle of reflected rays does not have the Kerr rotation angle, and becomes an output corresponding to the Kerr rotation angle generated in this bundle of rays, which becomes a magneto-optical signal.
On the other hand, a bundle of rays reflected by the second beam splitter 15 is introduced into the second polarization beam splitter 16. Of this bundle of rays, a bundle of rays that has returned from the flat surface portion of the solid immersion lens 1 in order to obtain the gap error signal is reflected by the second polarization beam splitter 16 and received at the third photo-detector 10 that is used to obtain the gap error signal.
Also in the optical pickup device shown in FIG. 9, similarly to the case of the optical system shown in FIG. 1, the polarized state of incident light introduced into the beam splitter 5 becomes linearly polarized light that contains only the electric field component of the X direction as shown in FIG. 2A but that does not contain the electric field component of the Y direction as shown in FIG. 2B. Each of the beam splitters 5, 15 transmits and reflects the polarized components of both X, Y directions equally.
When the flat surface portion of the solid immersion lens 1 is in close contact with the surface of the optical recording medium 90, this flat surface portion is in close contact with the phase-change recording and reproducing multilayer film (composed of Al film, SiO2 film, TeFeCo film, SiO2 film deposited on the substrate, in that order) deposited on the surface of the optical recording medium 90 as shown in FIG. 10. A distribution of returned light on the surface B which is the surface required after the returned light has passed through the second polarization beam splitter 16 at that time becomes a distribution substantially equal to those of light beams emitted from the semiconductor laser 3 as shown in FIG. 11A. Then, in the surface C which is the surface disposed just before returned light is reflected by the second polarization beam splitter 16 and introduced into the third photo-detector 10, the returned light from the optical recording medium 90 is hardly returned as shown in FIG. 11B. Accordingly, when the flat surface portion of the solid immersion lens 1 is in close contact with the surface of the optical recording medium 90, returned light on the surface C is almost zero, and hence returned light hardly reaches the third photo-detector 10.
Then, in the state in which the solid immersion lens 1 is distant from the optical recording medium 90, as shown in FIG. 5, of light beams converged near the flat surface portion of the solid immersion lens 1, light incident on the flat surface portion of the solid immersion lens 1 at an angle exceeding the critical angle of this flat surface portion is totally reflected on this flat surface portion of the solid immersion lens 1 ((refractive index of solid immersion lens)×sin(incidence angle)>1)
The thus totally reflected light delicately rotates its direction of polarization when it is totally reflected. Then, the thus totally reflected light contains a polarized component normal to the reflected light obtained in the state in which the flat surface portion of the solid immersion lens 1 is in close contact with the surface of the optical recording medium 90 as described above. As a result, a distribution of the returned light on the surface C which is the surface required just before the light is reflected by the second polarization beam splitter 16 and introduced into the third photo-detector 10 becomes a distribution in which the portions corresponding to the marginal portions of a bundle of rays are partly returned as shown in FIG. 12B.
The light thus returned to the surface C is received at the second photo-detector 10 which is used to obtain a gap error signal. This gap error signal is a signal corresponding to the distance between the flat surface portion of the solid immersion lens 1 and the surface of the optical recording medium 90.
Then, at that time, a distribution of the returned light on the surface B which is the surface behind the second polarization beam splitter 16 becomes a distribution in which the portions corresponding to the marginal portions of a bundle of rays are missing as shown in FIG. 12A.
In a relationship between the quantity of light received at the third photo-detector 10 and the distance (air gap) between the flat surface portion of the solid immersion lens 1 and the surface of the optical recording medium 90, as shown in FIG. 13, this distance (air gap) can be held at 10/1 of the wavelength of the light by controlling the position of the direction in which the solid immersion lens 1 comes in contact with or comes away from the optical recording medium 90 such that the quantity of light of the third photo-detector 10, for example, is held at the ratio of quantity of incident light of 0.1.
However, when these previously-proposed optical pickup devices are in use, the arrangement shown in FIG. 1 requires a plurality of beam splitters such as the beam splitter 5 for obtaining the gap error signal and the polarization beam splitter 6 for obtaining the reproduced signal and also requires separately independent photo-detectors such as the photo-detector 10 for obtaining the gap error signal and the photo-detector 9 for obtaining the reproduced signal. There arises a problem, in which the optical pickup device becomes complex in arrangement. The optical pickup devices shown in FIGS. 8 and 9 needs much more beam splitters and photo-detectors. Further, a problem arises, in which the recording and reproducing apparatus requires the optical pickup device having the complex arrangement so that the recording and reproducing apparatus which assembles such optical pickup device also becomes complex in arrangement.

This patent is subject to a terminal disclaimer.

Optical pickup device, recording and reproducing apparatus and gap detection method


A reset signal generating circuit in a synchronous semiconductor memory device outputs a reset signal ZPOR1 in response to a power on reset signal ZPOR generated immediately after power on and an initialize command (for example, a precharge command) executed for initialization after power on. A test mode register included in a mode setting circuit receives as a reset signal, the reset signal ZPOR1. Consequently, a test mode signal output attains to an NOP state, or output of the test mode signal is stopped.

1. Field of the Invention
The present invention relates to a synchronous semiconductor memory device and, more specifically, to a synchronous semiconductor memory device in which a test mode is reset at the time of power on.
2. Description of the Background Art
In a synchronous semiconductor memory device developed in order to attain high speed accessing, operations (instructions) necessary for data reading or writing are all performed in synchronization with a clock (external clock signal) applied externally with a stable period.
A conventional synchronous semiconductor memory device will be described with reference to FIG. 21. A synchronous semiconductor memory device 9000 shown in FIG. 21 includes a control signal buffer 101, an internal clock generating circuit 102, an address buffer 103, a mode setting circuit 104, an act generating circuit 106, a precharge generating circuit 105, a POR generating circuit 100 and a plurality of banks (in FIG. 21, banks B0, B1, B2 and B3).
Banks B0, B1, B2 and B3 each include a row system control circuit, a word driver, a sense amplifier and an IO gate, not shown. Each bank is capable of activating a word line, reading data, writing data and inactivating a word line, independent from each other.
The memory cell array, not shown, includes a plurality of memory cells arranged in a matrix of rows and columns, and each memory cell is connected to a crossing between a word line provided corresponding to the row direction and a bit line pair provided corresponding to the column direction.
Control signal buffer 101 receives external control signals (external row address strobe signal /RAS, external column address strobe signal /CAS, external write enable signal /WE and so on), and outputs corresponding internal control signals. In the following description, internal control signals ZCS, ZRAS, ZCAS and ZWE denote internal signals corresponding to and in phase with an external chip select signal /CS, external row address strobe signal /RAS, external column address strobe signal /CAS and external write enable signal /WE, which are external control signals, respectively. Internal control signals CS, RAS, CAS and WE denote internal signals of opposite phase to internal control signals ZCS, ZRAS, ZCAS and ZWE, respectively.
Internal clock generating circuit 102 takes in an external clock signal EXTCLK and outputs an internal clock signal CLK for controlling internal operation.
Address buffer 103 takes in an externally applied external address signal A and outputs an address signal (which will be referred to as ADD0, ADD1, . . . , ADD7). The external address signal A includes a row address signal and a column address signal time divisionally multiplexed. Further, address buffer 103 includes a bank address decoder, not shown, which decodes the address signal A and outputs a bank decode signal designating a corresponding bank.
Act generating circuit 106 outputs an act start signal for activating a designated bank, in response to an externally input act command. Precharge generating circuit 105 outputs a precharge start signal for inactivating a designated bank, in response to an externally input precharge command.
Mode setting circuit 104 sets a specific operation mode or a test mode in response to an external signal, which will be described later. Thus, it is possible to set various operation modes or test modes including a CAS latency CL and burst length BL.
POR generating circuit 100 outputs, for a prescribed period after power on, a power on reset signal ZPOR based on an external power supply voltage EXTVDD. Mode setting circuit 104 is reset upon reception of the power on reset signal ZPOR.
Normal operation of the conventional synchronous semiconductor memory device 9000 shown in FIG. 21 from power on until it enters idle state will be described with reference to a timing chart of FIG. 22.
In FIG. 22, (A) represents internal clock signal CLK, (B) represents an internal control signal (clock enable signal) CKE, (C) represents internal control signal ZCS, (D) represents internal control signal ZRAS, (E) represents internal control signal ZCAS and (F) represents internal control signal ZWE, respectively. Further, (G) represents address signal A, (H) represents bank decode signal BA, (I) represents power supply voltage EXTVDD, and (J) represents power on reset signal ZPOR, respectively.
After power on (time t0), power supply voltage EXTVDD rises. At a time point (time t1) when external power supply voltage EXTVDD attains to a prescribed level, the power on reset signal ZPOR is output from POR generating circuit 100, and the synchronous semiconductor memory device is internally reset.
Thereafter, a stable clock state of 200 .mu.s is kept, so that internal voltage system is stabilized. Thereafter, a precharge all command PREA (specified by internal control signals ZRAS and ZWE at the L level and internal control signal ZCAS at the H level) is executed on all the banks. After the lapse of a tRP period (normally, 30 ns), an auto refresh command REFA (specified by internal control signals ZRAS and ZCAS at the L level and internal control signal ZWE at the H level) is executed eight times or more with the cycle of tRC period (normally, 80 ns).
Thereafter, a mode register set command MRS (specified by setting internal control signals ZRAS, ZCAS and ZWE to the L level and by inputting address signal A) is input, so that an operation mode of a circuit such as CAS latency CL or burst length BL is set.
Mode setting circuit 104 which operates in response to the mode register set command will be briefly described with reference to FIG. 23.
The conventional mode setting circuit 104 shown in FIG. 23 includes a mode detecting circuit 115, a normal mode setting circuit 124 and a test mode setting circuit 125.
Normal mode setting circuit 124 includes a normal mode register 116 and a normal mode decoder 117. Test mode setting circuit 125 includes a test mode register 118 and a test mode decoder 119.
Mode detecting circuit 115 is responsive to the mode register set command and address signal ADD7 and outputs a signal for operating a normal mode register 116 or a test mode register 118, which will be described later. Address signal ADD7 is a key signal for entering the test mode.
Here, the test mode refers to an operation mode employed for efficiently evaluating and analyzing the synchronous semiconductor memory device, and it is set by a procedure which is not used in actual use (more specifically, address signal ADD7 is fixed at the L level).
Normal mode setting circuit 124 outputs various mode signals (CAS latency CL, burst length BL, . . . ) in response to address signals ADD0, . . . , ADD6 at the time of input of the mode register set command.
Test mode setting circuit 125 outputs various test mode signals in response to address signals ADD0, ADD1 and ADD7 at the time of input of the mode register set command.
Here, when the address signal ADD7 is at the L level, address signals ADD0, . . . , ADD6 will be a decode signal for selecting a specific one mode among a plurality of normal modes. When address signal ADD7 is at the H level, address signals ADD0 and ADD1 will be a decode signal for selecting any one of a plurality of test modes.
Structure of the mode detecting circuit 115 will be briefly described with reference to FIG. 24.
Referring to FIG. 24, mode detecting circuit 115 includes an NAND circuit 1, NOR circuits 2 and 5, and inverter circuits 3, 4, 6 and 7. When input of the mode register set command (specified by internal control signals CS, RAS, CAS and WE at the H level) is detected, NAND circuit 1 outputs a signal MR which is at the L level.
NOR circuit 2 receives at its inputs the signal MR and address signal ADD7. NOR circuit 5 receives at its inputs the signal MR and the ground potential.
Inverter circuit 3 inverts an output signal from NOR circuit 2, and outputs an inverted normal mode set signal ZSNM. Inverter circuit 4 inverts the inverted normal mode set signal ZSNM, and outputs a normal mode set signal SNM.
Inverter circuit 6 inverts an output signal from NOR circuit 5 and outputs an inverted test mode set signal ZSTM. Inverter circuit 7 inverts the inverted test mode set signal ZSTM and outputs a test mode set signal STM.
A register constituting normal mode register 116 and test mode register 118 will be described with reference to FIG. 25.
A register R1 shown in FIG. 25 is a latch type register and it includes inverter circuits 11, 12 and 13, gate circuits 14 and 15, and an NOR circuit 16.
Inverter circuit 11 inverts a signal at input node N1 and outputs the inverted signal to NOR circuit 16. Gate circuit 14 inverts, in response to signals at input nodes N3 and N4, a signal received from input node N2 and outputs the inverted signal to node Z1. NOR circuit 16 receives signals from inverter circuit 11 and node Z1. Gate circuit 15 inverts, in response to signals at input nodes N3 and N4, an output signal from NOR circuit 16 and outputs the result to node Z1. Inverter circuit 12 inverts the signal at node Z1 and outputs the result to output node N5. Inverter circuit 13 inverts an output signal from inverter circuit 12 and outputs the result to output node N6.
Normal mode register 116 includes resistors R1 corresponding to address signals ADD0, . . . , ADD6, respectively. Register R1 corresponding to address signal ADDi (where i=0, . . . , 6) receives at an input node N1, the power on reset signal ZPOR and at input node N2, the corresponding address signal ADDi. Further, the register receives at an input node N3, the inverted normal mode set signal ZSNM, and at input node N4, the normal mode set signal SNM. A signal NADDi is output from an output node N5, and its inverted signal, an inverted signal ZNADDi is output from an output node N6 (hereinafter the signals will be generally referred to as NADDi and inverted signal ZNADD).
Test mode register 118 includes registers R1 corresponding to address signals ADD0 and ADD1, respectively. Register R1 corresponding to address signal ADDi (where i=0, 1) receives at input node N1, the power on reset signal ZPOR, and at input node N2, the corresponding address signal ADDi. Further, the register R1 receives at input node N3, the inverted test mode set signal ZSTM, and at input node N4, receives the test mode set signal STM. A signal TADDi is output from output node N5, and its inverted signal, an inverted signal ZTADDi is output from output node N6 (hereinafter, these signals will be generally referred to as signal TADD and inverted signal ZTADD).
Further, test mode register 118 includes a register corresponding to address signal ADD7. The register corresponding to address signal ADD7 has the same circuit structure as register R1 shown in FIG. 25, with an inverter circuit 13 (output node N6) removed (hereinafter, the register will be referred to as register R2). Register R2 receives, at input node N1, the power on reset signal ZPOR, at input node N2, address signal ADD7, at input node N3, inverted test mode set signal ZSTM and at input node N4, test mode set signal STM. Test mode enable signal TME is output from output node N5 of register R2.
Structure of the test mode decoder 119 will be briefly described with reference to FIG. 26.
Test mode decoder 119 shown in FIG. 26 includes NAND circuits 21, 22, 23 and 24, and inverter circuits 25, 26, 27 and 28. The signal TADD, inverted signal ZTADD and test mode enable signal TME output from test mode register 118 are input to respective input nodes of NAND circuits 21, . . . , 24. Test mode signals TM1, TM2, TM3 and TM4 are output from inverter circuits 25, 26, 27 and 28, respectively.
Normal mode decoder 117 has the same structure as test mode decoder 119 and outputs a mode signal in response to a combination of the signal NADD and the inverted signal ZNADD output from normal mode register 116.
Relation between operations of normal mode setting circuit 124 and test mode setting circuit 125 will be described with reference to the timing chart of FIG. 27.
In FIG. 27, (A) represents internal clock signal CLK, (B) represents internal control signal CS, (C) represents internal control signal RAS, (D) represents internal control signal CAS, (E) represents internal control signal WE, (F) represents address signal ADD7, (G) represents normal mode set signal SNM and (H) represents test mode set signal STM.
As shown in FIG. 27, if address signal ADD7 is at the H level when mode register set command MRS is input (time t0), test mode set signal STM attains to the H level while the normal mode set signal SNM is at the L level, and therefore test mode register 118 is set while the content of normal mode register 116 is protected.
If address signal ADD7 is at the H level when mode register set command MRS is input (time t1), normal mode set signal SNM and test mode set signal STM both attain to the H level. In this case, inlet of register R1 of normal mode register 116 is opened, and addresses ADD0, . . . , ADD6 are taken in. Thus, the signal NADD and the inverted signal ZNADD are generated. As shown in the circuit diagram, normal mode register 116 is a latch type circuit, and taking of a signal is performed only by the mode register set command.
The address signals which are taken in are decoded by normal mode decoder 117 and provide information related to mode signal BL, CL and so on. Meanwhile, since address signal ADD7 at the L level is taken in by register R2, test mode enable signal TME is reset, and the test mode is reset (exit).
In actual use (normal mode), address signal ADD7 is fixed at the L level when mode register set command is input, so that entrance to test mode is prevented.
As described above, the conventional synchronous semiconductor memory device 9000 includes a test mode setting circuit 125 for testing before delivery, and in the actual use, power on reset signal ZPOR is used for resetting, so as to prevent erroneous entrance to the test mode.
The power on reset signal ZPOR, however, may not sufficiently be generated at the time of power on, dependent on the condition of rise of the power supply. Therefore, resetting by the power on reset signal ZPOR signal is not very reliable.
Meanwhile, the conventional semiconductor memory device 9000 includes normal mode setting circuit 124 and test mode setting circuit 125, and operations of these circuits are controlled by combination of address signals at the time of input of the mode register set command. Though the combinations of the addresses are not open in the actual use, it is possible that the test mode is erroneously entered if the reset should be insufficient.
In fact, there are computer systems which support both EDO DRAM (Extended Data Out Dynamic Random Access Memory) and the synchronous semiconductor memory device. In such a system, it is possible that an unnecessary signal is applied to the synchronous semiconductor memory device in an operation of checking the memory.
Therefore, there still remains possibility of erroneous entrance to the test mode in the actual use. Therefore, in the conventional synchronous semiconductor memory device 9000, the test mode is reset by the mode register set command in the normal mode. However, when the test mode involves variation in internal potential, a time period of at least several hundreds ns is necessary from the cancellation of the test mode until the internal voltage returns to the set value. Therefore, if an operation instruction such as an act command is input to the synchronous semiconductor memory device 9000 immediately after the execution of the mode register set command, the synchronous semiconductor memory device 9000 may possibly malfunction.

Synchronous semiconductor device having circuitry capable of surely resetting test mode


A method and system for setting a learning period of an engine clutch of a hybrid vehicle are provided. The engine clutch controls a connection of power between an engine and a motor of a hybrid vehicle, and the method includes: detecting and accumulating a launch slip time of the engine clutch; detecting and accumulating a launch slip entry number of times of the engine clutch; detecting and accumulating a time in which a temperature of the engine clutch exceeds a setting temperature; detecting and accumulating a number of times in which the temperature of the engine clutch exceeds the setting temperature; and setting a learning period of the engine clutch based on at least one of the launch slip accumulation time, the launch slip entry accumulation number of times, the setting temperature exceeding accumulation time, and the setting temperature exceeding accumulation number of times.

(a) Field of the Invention
The present invention relates to a method and system for setting a learning period of an engine clutch of a hybrid vehicle.
(b) Description of the Related Art
In general, a hybrid vehicle reduces an exhaust gas and enhances fuel consumption using a motor as well as an engine as power sources. In a hybrid vehicle, an engine 11, a motor 12, and a transmission 13 are disposed in a line, as shown in FIG. 1 (RELATED ART).
In the hybrid vehicle 10, an engine clutch 14 for transferring and intercepting driving power between the engine 11 and the motor 12 is mounted. A conceptual diagram of the engine clutch 14 is shown in FIG. 2.
As shown in FIG. 2 (RELATED ART), the engine clutch 14 includes a friction member (FE) that moves by pressure (hydraulic pressure) of a fluid (oil) (FL) in an amount controlled by operation of a solenoid valve (SOL) and a return spring (SP) that returns the friction member PE when an operation hydraulic pressure is not applied to the friction member PE. The solenoid valve SOL is generally controlled by a current.
In the solenoid valve SOL a pressure (hydraulic, pressure) that is actually applied to the engine clutch 14 is measured by a hydraulic pressure sensor. The SOL operates to increase a hydraulic pressure that is applied to the PE, as an applied current increases. When the hydraulic pressure that is applied to the PE increases, a contact frictional force of the PE increases. Therefore, a torque that is transferred to the engine clutch 14 increases proportionally to a current that is applied to the SOL.
In the hybrid vehicle 10, an integrated starter & generator (ISG) 15 that starts the engine 11, or that functions as a generator is mounted in the engine 11. The ISG 15 is referred to as a hybrid starter & generator (HSG).
The hybrid vehicle 10 can travel in an electric vehicle (EV) mode, which is a pure electric vehicle mode that uses only power of the motor 12. The hybrid vehicle 10 can travel in a hybrid electric vehicle (HEV) mode that uses a torque of the motor 12 as auxiliary power while using a torque of the engine 11 as main power.
Further, when the hybrid vehicle 10 travels by braking or inertia of the vehicle, the hybrid vehicle 10 travels in a regenerative braking (RB) mode that recovers braking and inertia energy of the vehicle through generation in the motor and that charges the battery with the energy. In this way, for conversion of a mode, in order to transfer and separate power between the motor 12 and the engine 11, the hybrid vehicle 10 operates the engine clutch 14.
Because an operating hydraulic, pressure of the engine clutch for determining operation of the engine clutch 14 can greatly change drivability, power performance, and fuel consumption of the hybrid vehicle 10, the operation hydraulic pressure of the engine clutch 14 should be accurately controlled.
However, a variation occurs in operation of the engine clutch 14 by a characteristic and a use environment of the engine clutch 14, as shown in FIG. 3 (RELATED ART). According to the variation, an offset variation that is related to a torque transfer start hydraulic pressure, and a gain variation and a linear variation that are related to a transfer torque may exist. Each variation may occur by a characteristic of the engine clutch 14 and a characteristic of the solenoid valve SOL. Each variation may occur due to a difference between engine clutch single products, for example, part assembly tolerance, a current to pressure characteristic variation, and a characteristic change according to aging lapse of the SOL. When each variation is not appropriately corrected through learning, each variation can have a negative influence on drivability, power performance, and fuel consumption of the hybrid vehicle.
Learning of the engine clutch of the hybrid vehicle for correcting each variation includes end of line (EOL) learning and traveling learning. A variation of the engine clutch single product may he mostly compensated by the EOL learning. The traveling learning is applied to compensate a characteristic in which the engine clutch slowly changes by lapse of aging according to vehicle driving.
A characteristic of the engine clutch changes according to the use frequency of the engine clutch, and at a low speed, as a launch slip control increases, the characteristic may quickly change. The launch slip entry frequency varies according to a driver or a driving condition of the hybrid vehicle.
Launch slip of the engine clutch refers to slip that occurs while applying a hydraulic pressure to the engine clutch before a speed of both ends of the engine clutch is synchronized. In particular, a launch slip of the engine clutch is a so-called half clutch state, and when engine power may be transferred to a driving shaft of the hybrid vehicle, and in the launch slip, the hybrid vehicle may start.
Traveling learning of the engine clutch includes kiss point learning and transfer torque learning and is generally performed in the fixed driving cycle (DC) number of times or a predetermined mileage cycle.
In the DC, a cycle from Ignition ON to Ignition OFF is defined as one time DC. However, in a characteristic of the engine clutch, because a changing time is different according to an applied hybrid vehicle, when the traveling learning period is determined to the fixed done DC number of times or a predetermined mileage cycle, accurate learning cannot be performed. In particular, when the traveling learning period is determined to the fixed DC number of times or a predetermined mileage cycle, a phenomenon that a traveling learning period is so frequent or no short according to a situation may occur.
The above information disclosed in this Background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form the prior art that is already known in this country to ape/son of ordinary skill in the art.

Method and system for setting learning period of engine clutch of hybrid vehicle


A capacitive structure includes two parallel plate capacitors configured for placing between coaxial cables. The first parallel plate capacitor includes an upper conductive plate and a lower conductive plate that are substantially parallel to one another and separated from one another by a first dielectric material. The second parallel plate capacitor includes an upper conductive plate and lower conductive plate that are substantially parallel to one another and separated by a second dielectric material. The lower conductive plate of the first capacitor is engaged against, and thereby connected to, the upper conductive plate of the second capacitor. A conductive clip connects the upper conductive plate of the first capacitor to the lower conductive plate of the second capacitor. A channel in the clip prevents the lower conductive plate of the first capacitor and the upper conductive plate of the second capacitor from shorting with the upper conductive plate of the first capacitor and the lower conductive plate of the second capacitor. To maintain the clip between the coaxial cables, axial pressure may be applied from an insert in the center conductor of at least one of the cables.

1. Field of the Invention
The present invention relates capacitors, and more particularly a parallel plate capacitive structure for connecting to microwave coaxial transmission cables.
2. Description of the Related Art
FIG. 1A illustrates a microwave coaxial transmission cable 100 that has an inner conductor 102 and an outer conductor 106. FIG. 1B shows a cutaway side view of microwave coaxial transmission cable 100. Inner conductor 102 and outer conductor 106, which are parallel to one another, are separated from one another by an insulator 104 that surrounds inner conductor 102. An additional insulator 108 (also known as a shield) surrounds an outer surface of outer conductor 106. It is noted that the thickness of each of elements 102, 104, 106 and 108 of cable 100 are not necessarily drawn to scale in FIGS. 1A and 1B.
It is sometimes desirable to block low frequencies from being propagated through a microwave transmission line made up of one or more microwave coaxial cables 100. Capacitors are typically used to block low frequencies. However, the use of a capacitor in a coaxial environment presents challenges due to the size and structure of coaxial cables 100. Coaxial cables are typically connected to a substrate containing one or more capacitors, and a transition is made back from the substrate to another coaxial cable.
In accordance with an embodiment of the present invention a capacitive structure is provided including first and second parallel plate capacitors. The first parallel plate capacitor includes an upper conductive plate and a lower conductive plate that are substantially parallel to one another and separated from one another by a first dielectric material. Similarly, the second parallel plate capacitor includes an upper conductive plate and lower conductive plate that are substantially parallel to one another and separated by a second dielectric material. The lower conductive plate of the first capacitor is engaged against, and thereby connected to, the upper conductive plate of the second capacitor. A conductive clip connects the upper conductive plate of the first capacitor to the lower conductive plate of the second capacitor.
The conductive clip includes a body having an outer surface and an inner surface, and the clip body is substantially rectangular. The inner surface includes a channel to prevent the lower conductive plate of the first capacitor and the upper conductive plate of the second capacitor from shorting with the upper conductive plate of the first capacitor or the lower conductive plate of the second capacitor. The channel extends a width of the body of the conductive clip. A height of the channel is preferably greater than a combined height of the lower conductive plate of the first capacitor and the upper conductive plate of the second capacitor to prevent contact with these plates, which would result in shorting.
Extending from opposite ends of the inner surface are a first lip and a second lip, which form a cavity for accepting the first and second capacitors. When the capacitors are within the cavity, the first lip engages against an outer surface of the upper conductive plate of the first capacitor, and the second lip engages against an outer surface of the lower conductive plate of the second capacitor.
Electrical contact is made between the clip and a first coaxial cable to enable a signal to be transmitted through the capacitors. The outer surface of the conductive clip body includes a first bore to receive a first inner conductor of a first coaxial cable to make the contact. The bore extends into, but preferably not through, the body.
To make contact with a second coaxial cable, a conductive cup is connected to the lower conductive plate of the first capacitor and the upper conductive plate of the second capacitor. The conductive cup includes a second bore to receive a second inner conductor of the second coaxial cable. To maximize electrical contact, a diameter of the conductive cup is preferably greater than a combined height of the lower conductive plate of the first capacitor and the upper conductive plate of the second capacitor. Additionally, to prevent undesired shorting of the plates of one capacitor together, the diameter of the conductive cup should be less than a combined height of the first dielectric material, the lower conductive plate of the first capacitor, the upper conductive plate of the second capacitor and the second dielectric material.
In an embodiment of the present invention, to assure contact is maintained between the parallel plate capacitors and the first and second coaxial cables, one or both of the first inner conductor and the second inner conductor includes a central bore, within which an axial pressure contact member is inserted. A tapered end of the axial pressure contact member rests within the corresponding bore of the conductive clip and conductive cup (i.e., the first bore of the clip, or the second bore of the cup), and provides axial pressure to keep the capacitive structure firmly between the first and second inner conductors.

Capacitive structure for use with coaxial transmission cables


Substituted benzamide compounds are provided along with methods for the use of those compounds for treating cancer.

The present invention is directed to novel compounds and pharmaceutical compositions that inhibit the binding of the SDF-1 chemokine (also known as the CXCL12 chemokine) or I-TAC (also known as CXCL11) to the chemokine receptor CCXCKR2. These compounds are useful in preventing tumor cell proliferation, tumor formation, and metastasis.
Chemokines are a superfamily of small, cytokine-like proteins that induce cytoskeletal rearrangement, firm adhesion to endothelial cells, and directional migration and may also effect cell activation and proliferation. Chemokines act in a coordinated fashion with cell surface proteins to direct the specific homing of various subsets of cells to specific anatomical sites.
Early research efforts by a number of groups have indicated a role for the chemokine receptor CXCR4 in metastasis and tumor growth. Muller, et al., "Involvement of Chemokine Receptors in Breast Cancer Metastasis," Nature, 410:50-56 (2001) demonstrated that breast tumor cells use chemokine-mediated mechanisms, such as those regulating leukocyte trafficking, during the process of metastasis. Tumor cells express a distinct, non-random pattern of functionally active chemokine receptors. Signaling through CXCR4 mediates actin polymerization and pseudopodia formation in breast cancer cells, and induces chemotactic and invasive responses. Additionally, the organs representing the main sites of breast cancer metastasis (such as lymph nodes, bone marrow, and lungs) are the most abundant sources of ligand for the CXCR4 receptor.
Using immunodeficient mice, Muller and colleagues succeeded in reducing the metastasis of injected human breast cancer cells by treating mice with an antibody known to bind CXCR4. Their finding suggests that breast cancer metastasis could be reduced by treating a patient with a CXCR4 antagonist.
Bertolini, et al., "CXCR4 Neutralization, a Novel Therapeutic Approach for Non-Hodgkin's Lymphoma," Cancer Research, 62:3106-3112 (2002) demonstrated a reduction of tumor volume as well as prolonged survival of immunodeficient mice injected with human lymphoma cells treated with anti-CXCR4 antibodies. They interpreted their finding to mean that tumor volume could be reduced by treating a patient with a CXCR4 antagonist.
More recent studies suggest that another chemokine receptor, CCXCKR2, may also be a potential candidate in the treatment of cancer. CCXCKR2 is preferentially expressed in transformed cells over normal cells, with detectable expression in a number of human cancers. In vitro studies indicate that proliferation of CCXCKR2 expressing cells can be inhibited by an antagonist of CCXCKR2. In vivo studies in mice indicate that CCXCKR2 antagonists can inhibit tumor formation and tumor growth.
The potential importance of CCXCKR2 is illustrated by an alternative interpretation of the reduction in tumor volume seen by Bertolini and colleagues. This reduction could clearly be the result of an antibody-mediated clearance, and not the result of the anti-CXCR4 antibody as originally believed. In an antibody-mediated clearance, any antibody that recognized a protein on the cell surface of the lymphoma cells would have had the same effect as that attributed to the anti-CXCR4 antibody. Unfortunately, Bertolini and colleagues studies are inconclusive as to whether the observed tumor response was due to antibody-mediated clearance or interaction with CXCR4.
However it is now known that the lymphoma cells used by Bertolini and colleagues express both CXCR4 and CCXCKR2. SDF-1 is the only ligand for CXCR4. SDF-1 and I-TAC both bind CCXCKR2. Using anti-SDF-1 antibody, it has now been shown that antagonists of CCXCKR2 are responsible for the reduction in tumor load and increased survival rate. Because SDF-1 is the only ligand for CXCR4, one would expect neutralization of SDF-1 with anti-SDF-1 antibody would be equivalent to the neutralization of CXCR4 with anti-CXCR4 antibody. However, experiments using an anti-SDF-1 antibody demonstrated only a partial reduction in tumor load and an increased survival rate. As a result, CCXCKR2 is the likely target, as the continued activity appears due to the interactions of the second ligand, I-TAC, with CCXCKR2.
Until recently, the possible importance of CCXCKR2 in tumor cell proliferation, tumor growth, and metastasis was unknown. Now, with recent evidence pointing to the ability of certain CCXCKR2 antagonists to prevent the growth and spread of cancer, and expression patterns indicating a limited tissue distribution for the CCXCKR2 receptor, it would be beneficial to provide compounds that are able to bind specifically to the CCXCKR2 receptor on tumor cells with potentially few side effects. Surprisingly, the present invention provides such compounds along with pharmaceutical compositions and related methods for treatment.


A method of manufacturing a semiconductor device having a porous, low-k dielectric layer is provided. A preferred embodiment comprises the steps of forming a porogen-containing, low-k dielectric layer, in the damascene process. In preferred embodiments, pore generation, by e-beam porogen degradation, occurs after the steps of CMP planarizing the damascene copper conductor and depositing a semipermeable cap layer. In alternative embodiments, the cap layer consists essentially of silicon carbide, silicon nitride, Co, W, Al, Ta, Ti, Ni, Ru, and combinations thereof. The semipermeable cap layer is preferably deposited under PECVD conditions such that the cap layer is sufficiently permeable to enable removal of porogen degradation by-products. Preferred embodiments further include an in-situ N2/NH3 treatment before depositing the semipermeable cap layer.

An important objective in the advancement of integrated circuit (IC) technology is the scaling-down of IC dimensions. Such scaling-down of IC dimensions reduces area capacitance and is critical to obtaining higher speed performance of integrated circuits. Moreover, reducing the area of an IC die leads to higher yield in IC fabrication. Such advantages are a driving force to constantly scale down IC dimensions.
As the density of integrated circuit structures continually increases, the distance between the interconnect structures decreases. As the distance between the interconnect structures decreases, a dielectric material with a low dielectric constant (i.e., a low-k dielectric material) is desired for the insulating layer. The insulating layer being comprised of the dielectric material with a low dielectric constant results in lower capacitance between the interconnect structures. Such lower capacitance results in higher speed performance of the integrated circuit and also in lower power dissipation. In addition, such lower capacitance results in lower cross talk between the interconnect structures. Lower cross talk between interconnect structures is especially advantageous when the interconnect structures are disposed closer together as device density increases.
One example of a dielectric material with a low dielectric constant for the insulating layer is a porous dielectric material having pores throughout. One type of porous low-k dielectric material is formed from a low-k precursor material comprised of a thermosetting host material and a thermally degradable porogen material. In that case, a solution of the uncured, low-k, precursor material is applied by a spin-on process, and then a thermal process is performed for curing the low-k precursor material to form the porous low-k dielectric material. The thermal process causes curing of the low-k precursor material with cross-linking of the host material to form a low-k dielectric matrix and concurrently with phase separation of the porogen from the host material. The phase-separated porogen collects in nanoscopic domains within the host material and thermally decomposes into volatile by-products (i.e., porogen fragments) that diffuse out of the low-k dielectric material leaving nanopores in their place.
Integration of porous dielectrics into conventional device fabrication schemes has created new problems. The open and interconnected porosity of the dielectrics allow reactive gases and chemicals to easily penetrate into the porous structure and damage the bulk material. Particularly degrading processes are photoresist removal and metal deposition. Moreover, the introduction of nanopores drastically deteriorates the mechanical properties of the film thereby limiting the yield of chemical mechanical polishing in copper-ELK (extreme low-k dielectric) process integration.
To overcome these issues, a new integration approach is needed in order to realize the full advantages of low-k, porous dielectrics.

Post-ESL porogen burn-out for copper ELK integration

Taiwan Semiconductor Manufacturing Company, Ltd.


This document discusses, among other things, apparatus and methods for a multi-section applicator having variable-rate sections. In an example, an apparatus can include at least one distribution manifold, a user interface, and an applicator controller. The at least one distribution manifold distributes a substance and can include an inlet port configured to receive the substance, a plurality of outlet ports, one or more sensors located at an outlet port, a controllable valve that supplies the substance to the inlet port. The applicator controller measures a value of the distribution parameter using the sensor signal produced by the at least one sensor of an outlet port, detects when the measured value differs from a specified target value by more than a specified error threshold value, and presents an indication, using the user interface, that the measured value differs from the target value according to the detection.

Liquid applicators, such as sprayers, have assisted in distributing liquids or liquids including gas components to various objects. In certain applications, such as applying an agricultural substance to a field, an applicator can assist in applying the substance in an even manner so as to create a uniform coverage while at the same time not wasting a substantial amount of the substance. Agricultural applicators can include one or more distribution booms or tool bars that are long enough (e.g., 60 feet to 150 feet) to reach multiple rows of crops at one pass. Applicators can be complex and can include multiple distribution paths or flow streams from one or more storage tanks to valves or nozzles at the point of application. Faults or variations in distribution can occur at any point in the distribution lines from a main distribution point (e.g., a reservoir) to a point of application (e.g., a coulter). Typically, if a user suspects that there is a fault with the distribution system or a problem due to variation in application by the applicator, the user inspects manual gauges or other indicators disposed at various locations of the applicator. Thus, the resolution and capabilities of custom liquid applications is limited by the current liquid application apparatus and methods.

NH3 fault and distribution variance detection system


A decodable indicia reading terminal can comprise a multiple pixel image sensor, an imaging lens configured to focus an image of decodable indicia on the image sensor, an analog-to-digital (A/D) converter configured to convert an analog signal read out of the image sensor into a digital signal, a communication interface, and a microprocessor configured to output decoded message data corresponding to the decodable indicia by processing the digital signal. The decodable indicia reading terminal can be configured, responsive to a triggering event, to transmit via the communication interface a decoding result and an indicia readability rating. The triggering event can be provided by a failure to detect decodable indicia, the indicia readability rating being less than a pre-defined threshold, exceeding a pre-defined time period to decode decodable indicia, a user interface action, and a command received via said communication interface.

The use of decodable indicia, such as bar code symbols, for product and article identification is well known in the art. Presently, various types of decodable indicia reading terminals have been developed, such as hand-held bar code scanners, hands-free scanners, bi-optic in-counter scanners, and mobile computers such as personal digital assistants (PDAs).
One common type of scan engine found in hand-held and retail scanners is the laser-based scan engine, which uses a focused laser beam to sequentially scan the bars and spaces of a bar code symbol pattern to be read. As the laser beam is scanned across the bar code symbol, a portion of the reflected light beam is collected by optics within the scanner. The collected light signal can subsequently be focused upon a photo-detector within the scanner. The photo-detector can, in one example, generate an analog electrical signal which can be converted into a digital signal representative of the bar code symbol.
Another common type of indicia reading terminal is the digital imager, which includes 1D (linear) imagers and 2D (area) imagers. Digital imagers typically utilize a lens to focus the image of the bar code onto a multiple pixel image sensor, which is often provided by a complementary metal-oxide semiconductor (CMOS) image sensor that converts light signals into electric signals.

Decodable indicia reading terminal with indicia analysis functionality


A method for compensating for a position error in an optical disc drive (ODD) is provided. The method compensates for a position error generated by a step error associated with a motor which moves an optical pickup unit across a surface of an optical disc. Error data associated with each step of the motor is stored in a memory unit of the ODD, and compensation for the related position error is accomplished by compensating for a track-direction movement of an actuator. The method is particularly useful when conducting a label-printing operation, in that it allows the label printing operation to be performed without generating position errors, gaps, or overwrites on a label surface of the disc, thus enhancing the quality of a label-printing operation and the resulting label.

1. Field of the Invention
The invention relates to a method for compensating for a position error in an optical disc apparatus, and, more particularly, to a method for compensating for a position error generated when a label is printed on a label surface of an optical disc by an optical disc apparatus.
2. Background of the Related Art
Optical discs have been developed recently which allow data to be recorded on a data surface of the disc, and a label with a desired design to be printed on the opposite, or non-data surface of the disc. The surface of the disc on which a label is printed is referred to as the label surface of the disc. Labels are typically transferred onto the label surface of the disc using a laser etching technology commonly referred to as LightScribe, in which a laser burns or etches an image onto a specially prepared, non-data side of an optical disc. A LightScribe disc is referred to herein simply for ease of discussion. However, it is well understood by those of ordinary skill in the art that the invention may be applied to any such disc which includes a surface on which a label may be printed, and, more particularly, to any such disc which includes a data side and a non-data side which has been specially prepared for laser printing or etching.
A land/groove for performing a tracking servo operation during a data recording process is formed on the data surface of the optical disc, and Absolute Time In Pre-groove (ATIP) information for detecting a current position is recorded as a wobble land/groove. An optical disc recording apparatus receives a push-pull signal generated by the land/groove and performs a tracking servo operation using an established feedback scheme, recognizes a current position based on the ATIP information, and thus can perform a random access operation at a desired position.
However, such a wooble land/groove is formed only on the data surface of the disc, and not on the label surface of the disc. Thus, as the label surface lacks the ATIP information used to detect a current position, neither the tracking servo operation nor the random access operation can be performed on the label surface of the disc. Rather, labels must be sequentially printed on the label surface of the optical disc, starting at an inner area and progressing towards an outer area of the optical disc based on a feed-forward scheme. Thus, this type of disc is very sensitive to the dynamic characteristics of an actuator of the optical pickup unit associated with a tracking servo.
To address these problems, a saw-teeth zone is allocated to a Control Feature Outer Ring (CFOR) zone of this type of disc. The CFOR zone is provided on the label surface in the form of a circular band having a predetermined width of, for example, 650 μm. Other widths may also be appropriate. The saw-teeth zone is divided into two zones opposite each other in the CFOR zone in consideration of eccentricity of the optical disc. A first area having a high reflection factor engages with a second area having a low reflection factor in the form of a plurality of saw-teeth. As a laser beam is directed at the center of the CFOR zone and the disc rotates, a resulting duty ratio of a reflected signal should be 50%. However, if a predetermined voltage is applied to an actuator arranged in the direction of a track which causes an objective lens to be positioned off center of the CFOR zone, as the disc rotates a laser beam directed at the CFOR zone is also off center, and the resulting duty ratio of the reflected signal would not necessarily be equal to 50%.
Therefore, an optical recording apparatus capable of performing a label-printing operation on a label surface of a disc may measure an actual sensitivity the actuator as it moves the objective lens in a track direction based on the magnitude of a predetermined voltage to be applied to the actuator in order to shift an objective lens to the outer area of the disc by a predetermined distance, and then perform a tracking servo operation using a feed-forward scheme based on the measured actual sensitivity of the track-direction actuator. However, other critical components associated with this tracking servo operation which affect recording quality of the optical disc include the dynamic characteristics of a sled motor which moves the optical pickup unit in a radial direction of the disc. The sled motor includes a step motor and a device for converting a rotation of the step motor into rectilinear motion. This conversion often results in unexpected step errors generated by mechanical factors (such as, for example, angle errors in frame/yoke values, non-uniform assembly at an inner diameter of the frame/yoke values, and the like) and electrical factors (such as, for example, winding resistance, non-uniformity between inductance phases, and unbalanced magnetic flux formed on the surface of each tooth, and the like).
FIG. 1 shows an ideal sled movement distance and actual sled movement distance for each step of an exemplary step motor. Due to the above-mentioned factors, an unexpected position error may occur during the sled movement as shown in FIG. 1. The tracking error resulting from this position error is shown in FIG. 2. Therefore, although the optical recording apparatus capable of performing a label-printing operation may be able to compensate for dynamic characteristics of an actuator based on operation of the saw-teeth zone, it cannot compensate for any position error generated by the sled motor as the optical pickup unit moves from the inner portion towards an outer circumference of the disc. This position error may result in space on the label surface on which a portion of a label is not printed may, or a portion of a label may be printed twice, each resulting in deterioration of quality.
The above references are incorporated by reference herein where appropriate for appropriate teachings of additional or alternative details, features and/or technical background.

Method for compensating for position error in an optical disc apparatus


A sheet-type medium separating apparatus applicable in a self-service financial device for reliable sheet-by-sheet separation of an entire stack of banknotes. The apparatus includes a pickup roller component; a reversal roller component; and a separation roller component, where the reversal roller component includes a reversal roller, the reversal roller is fitted onto a reversal roller shaft via a one-way bearing, the reversal roller is provided with an inner sleeve cylinder fixed with the one-way bearing and a reversal roller sleeve sleeved onto the inner sleeve cylinder and capable of moving axially and flexibly. The separating apparatus allows for automatic adjustment of the meshing clearance between the reversal roller and the separation roller on the basis of the thickness of sheet-type media to be separated, thus effectively solving the problem of the sheet-type media being jammed or torn.

The current financial self-service equipment has a banknote depositing and withdrawing module for depositing and withdrawing banknotes, an identification module for identifying the deposited banknotes, a temporary storage device for temporarily storing the identified banknotes, a cashbox for storing the eventually identified and confirmed banknotes, a necessary system control device, and etc.
When the above financial self-service equipment handles the banknotes deposited by the user, a whole stack of banknotes placed into the banknote depositing and withdrawing module are separated individually by a banknote separating device in the banknote depositing and withdrawing module, and enter through a banknote conveying passage into the identification module provided in the conveying passage, and the banknotes identified by the identification module are conveyed to the temporary storage device or the banknote depositing and withdrawing module according to the identification results. Thus, the banknote depositing and withdrawing module of the current financial self-service equipment consists of two isolated spaces, one is a receiving space for receiving the whole stack of banknotes placed in by users, and the other is a returning space for receiving the banknotes which are unaccepted after being identified by the identification module and need to be returned to the users.
Currently, most of banknote separating devices for individually separating the whole stack of banknotes are of friction-type, for example, the separating devices disclosed in Chinese patent application No. CN1999287A and Chinese patent application No. CN201567095U, the friction-type separating mechanism is mainly composed of a reverse roller assembly 1, a pickup roller assembly 2 and a separating roller assembly 3 as shown in FIG. 1.
In the process of separating the banknotes, as shown in FIG. 2, the banknotes 4 are individually separated in the direction from top to down, at this time, the pickup roller assembly 2 and the separating roller assembly 3 provide a downward impetus for the separated banknote, while a reverse roller assembly shaft 1 provides a resistance for the separated banknote, and mainly functions to prevent the second and subsequent banknotes from entering into a separation meshing zone as shown in FIG. 3, and FIG. 3 is a top view of FIG. 1, and FIG. 4 is a partially enlarged view of the reverse roller assembly and the separating roller assembly in FIG. 3. The individually separation of the whole stack of banknotes is achieved by the radial interference fit between the reverse roller assembly 1 and the separating roller assembly 3, and the banknote has a very small thickness, by taking a domestic banknote with a face value of RMB 100 Yuan as an example, the thickness of a single sheet of the banknote at the position of an anti-counterfeiting string is about 0.15 mm, and the thickness of the single sheet of banknote at other positions is about 0.1 mm, therefore the theoretical axial distance between the reverse roller assembly 1 and the separating roller assembly 3 is relatively small, and the accuracy during processing and assembling is required to be extremely high.
Moreover, different positions of the banknote of the same type has different thicknesses, and when the banknotes having a thickness difference pass through the passage, with a fixed clearance, between the reverse roller assembly 1 and the separating roller assembly 3, the banknotes may be jammed or torn in the separating process.

Sheet-type medium separating apparatus and self-service financial device


An apparatus and method for micro-tuning an effective clock frequency of a core in a microprocessor. The apparatus includes a microprocessor having at least one core with logic configured to transition between states, a clock signal coupled to the microprocessor, the clock signal having a predetermined clock frequency based on a worst-case clock frequency and a predetermined clock period. The apparatus further including at least one voltage drop sensor coupled to the core, the sensor being configured to generate an output signal for detecting a voltage drop in the core and to determine whether or not the output signal is detected within the clock period and, if the output signal is not detected, the sensor dynamically adjusts the clock period of the clock signal provided to the core to allow more time to complete state transitions, such that, dynamically adjusting the clock period effectively changes an effective core clock frequency.

A clocked digital system has a regular clock rate or frequency for synchronous data handling. The system's maximum operating frequency is determined by the worst case delay in the system. The worst case delay depends on the synchronous switching of the digital logic in the system. The switching draws a lot of current from the power supply, such that, the system's local power supply voltage and ground voltage are bounced due to limited on-chip decoupling capacitance and non-zero power supply line resistance and inductance. This voltage bouncing results in insufficient current being provided for the system leading to an increased delay in state transition time for the logic, a lower clock rate and a decrease in system performance. As such, there is a need for a cost effective and efficient way to improve performance of a clocked digital system.

Apparatus and method for micro performance tuning of a clocked digital system

International Business Machines Corporation


Disclosed is an aqueous organic-inorganic complex coating composition for a thin film which has a good curing characteristic at a low temperature and various good characteristics. The organic-inorganic complex coating composition for a steel sheet comprises about 100 weight parts of a water-soluble acrylic or vinyl modified organic high polymer resin, about 5 to 100 weight parts of a silica-based inorganic compound and about 1 to 50 weight parts of a curing agent based on the solid content of the water-soluble organic high polymer resin. The thin coating layer formed on the steel sheet using the organic-inorganic complex coating composition of the present invention has a good curing characteristic at a low temperature. Moreover, alkaline-resistance, corrosion-resistance, adhesiveness to the material, electrodeposition coating characteristic, anti-powdering characteristic, continuous weldability, and work efficiency of the coating are good. Moreover, since the coating composition of the present invention includes the acrylic or vinyl modified epoxy resin as a main component, an energy conservation problem and an environmental pollution problem can be solved. Further, working stability is good and the probability of a fire is decreased.

1. Field of the Invention
The present invention relates to an organic-inorganic (or organic-silicate) complex composition for coating a metal surface, and more particularly to an organic-inorganic complex composition for coating a metal surface that largely improves the surface protecting ability and the corrosion resistance of a steel sheet (or plate) treated by chrome or phosphoric acid and plated with an alloy of zinc-nickel, zinc-iron, zinc-aluminum, etc.
2. Description of the Prior Art
Research and development in improving the corrosion resistance in steel sheet by utilizing an alloy technique using metals such as zinc, nickel, chrome, manganese, aluminum, copper, cobalt, etc. have been continued. However, it is very difficult to obtain a sufficient corrosion resistance. Moreover, a stainless steel sheet having a good corrosion-resistance is very expensive, so the usage thereof is limited. In North America and Europe, since a lot of salts for defrosting and removing snow are used for preventing a frosting during winter, an anticorrosive steel sheet applied to the body of an automobile, becomes rigid. In order to solve this problem, a new method using an organic coating agent has been proposed. The conventional organic coating agent for the anticorrosive steel sheet is coated to a thickness of around 15 .mu.m, and is called a thick film-type organic coating agent. However, the problems of powdering, low continuous weldability, sacrificial ability, etc. appear during a molding process.
Recently, a thin film-type complex coating agent which gives the film thickness of 1 to 2 .mu.m, has been developed. This thin film-type complex coating agent has good corrosion-resistance, an improved continuous working characteristic, an anti-powdering characteristic, a good electrodeposition coating characteristic, etc. when compared with the above-mentioned thick film-type organic coating agent.
As an example of the thin film-type coating composition, disclosed in U.S. Pat. No. 5,213,846 (issued to Tsuneta et al.) is a corrosion-resistant coating composition. This composition comprises (i) a bisphenol type epoxy resin comprising bisphenol skeletons and epichlorohydrin skeletons and having at least two epoxy groups per molecule, and comprises (ii) silica particles. The bisphenol skeletons comprise bisphenol A skeletons and bisphenol F skeletons.
The coating method of the thin film-type complex coating agent includes the steps of coating a steel sheet plated with an alloy such as zinc-nickel, zinc-iron and zinc-aluminum, with 20 to 100 mg/m.sup.2 of a surface treating agent consisting essentially of chrome or phosphoric acid, coating the complex coating agent to the thickness of 5 .mu.m or less, and continuously coating, curing and drying at the material temperature of 100 to 250.degree. C. This method is called a PCM coating method.
In the conventional thin film-type complex coating agent, epoxy resin, acryl resin, urethane resin, modified epoxy resin, modified acryl resin, etc. are used as a resin (binder). However, these components have the defects of weak adhesiveness to the material and not particularly good curing property, corrosion-resistance, continuous weldability, anti-powdering characteristic, alkaline-resistance and electrodeposition. Especially, at a high curing temperature of about 200.degree. C. or over, an energy efficiency is not good and the properties of a steel sheet having high tension are deteriorated.
In addition, if the coating agent of the thin film-type is not sufficiently cured, the thus obtained coating layer may be exfoliated or a pre-treated chrome solution may liquate out during the removing process of an alkaline compound and a rinsing process carried out after the curing. Therefore, the corrosion-resistance of the steel sheet may be deteriorated or an important environmental problem may be induced.
Accordingly, the present inventors continue to improve the defects of the conventional thin film-type complex coating agent and develop a water-soluble thin film-type organic-inorganic complex coating composition which has a good curing ability at low temperature, alkaline-resistance, corrosion-resistance, a good adhesiveness to the material, a good electrodeposition coating characteristic, an anti-powdering characteristic, continuous weldability and a good work efficiency with respect to coating. This organic-inorganic complex coating composition uses acrylic or vinyl modified epoxy resin as a main component and is manufactured considering the environmental problem and the energy problem.

Organic-inorganic complex composition for coating metal surface


A method and apparatus for compressing a reference pattern (RP) with repeated substrings by encoding produce compressed reference patterns (CRPs) with reduce storage requirements. Operation codes and a flag are stored with the CRPs. During comparison of reference elements of the CRP to input elements (IEs) of an input pattern (IP), the operation codes are read and the reference pattern is decoded allowing all reference elements including those of the repeated substrings to be compared to IEs in the IP to determine if the RP appears within the IP.

Recognizing patterns within a set of data is important in many fields, including speech recognition, image processing, seismic data, etc. Some image processors collect image data and then pre-process the data to prepare it to be correlated to reference data. Other systems, like speech recognition, are real time where the input data is compared in real time to reference data to recognize patterns. Once the patterns are "recognized" or matched to a reference, the system may output the reference. For example, a speech recognition system may output equivalent text to the processed speech patterns. Other systems, like biological systems may use similar techniques to determine sequences in molecular strings like DNA.
In some systems, there is a need to find patterns that are imbedded in a continuous data stream. In non-aligned data streams there are some situations where patterns may be missed if only a single byte-by-byte comparison is implemented. The situation where patterns may be missed occurs when there is a repeated or nested repeating patterns in the input stream or the pattern to be detected. A RP containing the sequence that is being searched for is loaded into storage where each element of the sequence has a unique address. An address register is loaded with the address of the first element of the RP that is to be compared with the first element of the input pattern (IP). This address register is called a "pointer." In the general case, a pointer may be loaded with an address that may be either incremented (increased) or decremented (decreased). The value of the element pointed to by the pointer is retrieved and compared with input elements (IEs) that are clocked or loaded into a comparator.
In pattern recognition, it is often desired to compare elements of an IP to many RPs. For example, it may be desired to compare an IP resulting from digitizing a finger print to a library of RPs (all finger prints on file). To do the job quickly, elements of each RP may be compared in parallel with elements in the IP. Each RP may have repeating substrings (short patterns) which are smaller patterns embedded within the RP. Since a library of RPs may be quite large, the processing required may be considerable. It would be desirable to have a way of reducing the amount of storage necessary to hold the RPs. If the amount of data used to represent the RPs could be reduced, it may also reduce the time necessary to load and unload the RPs. Parallel processing may also be used where each one of the RPs and the IP are loaded into separate processing units to determine matches.
Other pattern recognition processing in biological systems may require the comparison of an IP to a large number of stored RPs that have substrings that are repeated. Processing in small parallel processing units may be limited by the storage size required for the RPs. Portable, inexpensive processing systems for chemical analysis, biological analysis, etc. may also be limited by the amount of storage needed to quickly process large numbers of RPs with repeating substrings.
There is, therefore, a need for a method and an apparatus to reduce the amount of information necessary to store RPs with repeated substrings by compressing and encoding the data representing the RPs. There is also a need for a method and apparatus to read and decode the RPs so that elements of the RPs may be compared to elements in an IP to determine occurrences of the RP contained in the IP.

Method and apparatus for finding repeated substrings in pattern recognition