A patch antenna system and method comprising a base extending in a first plane; at least one patch mounted in a plane substantially parallel to the first plane; spaced from the base by at least one metallic post such that between the base and patch is substantially only gaseous fluid (which may be air). At least one power source may be operatively connected to the at least one patch for generation of electromagnetic waves at a center frequency of approximately 5.8 Gigahertz. The method of neutralizing unattended microwave devices comprises connecting a power source to a patch antenna and operating the patch antenna at a frequency in the range of approximately 3.89 to of 5.85 Gigahertz in the vicinity of a suspected unattended microwave device used to activate an explosive device to thereby jam any communication signal to the unattended microwave device and prevent the activation.

An antenna is an element used for radiating or receiving electromagnetic waves. While antennas are available in numerous different shapes and sizes, they all operate according to the same basic principles of electromagnetics. According to Faraday's law, the induced electromotive force or emf in any closed circuit is equal to the time rate of change of the magnetic flux through the circuit. Electromotive force, emf, measured in volts, refers to the energy gained per unit charge passing through a generating device. As used herein, the magnetic flux refers to the quantity of magnetism, or the strength of a given magnetic field, given by the equation:
  ℰ  =      -                            ⅆ                      Φ            B                                    ⅆ          t                    .      where
∈ is the electromotive force (EMF) in volts
ΦB is the magnetic flux through the circuit (in webers).
The direction of the electromotive force (the negative sign in the above formula) is given by Lenz's law.
As a general principle, a guided wave traveling along a transmission line in an antenna will radiate free-space waves also known as electromagnetic waves. Conversely, when an antenna is receiving, it transforms free-space waves by inducing a guided electromagnetic wave within a transmission line. The guided electromagnetic waves are fed into a circuit, which converts them into a useful format.
When an antenna is transmitting, it receives the guided electromagnetic wave for transmission from a feed line and induces an electric field surrounding the antenna to form a free-space propagating electromagnetic wave. The features of an antenna can be described by parameters of operation such as frequency, radiation patterns, reflected loss, and gain.
An antenna may be a component of a device such as, for example, a cellular telephone, radio, television, or RADAR system that directs incoming and outgoing radio waves between free space and a transmission line. Antennas may be composed of metal or polymers filled with metal or carbonaceous particles and have a wide variety of configurations, from the whip or mast-like devices employed for radio and television broadcasting to the large parabolic reflectors used to receive satellite signals and the radio waves generated by distant astronomical objects.
Many types of portable electronic devices, such as cellular phones, GPS receivers, palm electronic devices, pagers, laptop computers, and telematics units in vehicles, need an effective and efficient antenna for communicating wirelessly with other fixed or mobile communication units, including satellites. Advances in digital and radio electronics have resulted in the production of a new class of personal communications equipment posing special problems for antenna designers.
Personal wireless communication devices have created an increased demand for compact antennas. The increase in satellite communication has also increased the demand for antennas that are compact and provide reliable transmission. In addition, the expansion of wireless local area has also necessitated the demand for antennas that are compact and inexpensive.
Wire antennas, such as whips and helical antennas, are sensitive to only one polarization direction. As a result, they are not optimal for use in portable communication devices which require robust communications even if the device is oriented such that the antenna is not aligned with a dominant polarization mode.
A patch antenna is a type of antenna that offers a low profile and easy manufacturability, great advantages over traditional antennas. Patch antennas are planar antennas used in wireless links and other microwave applications. Generally, conventional patch antennas use "patches" formed on the top surface of a thin dielectric substrate separating them from a conductive layer on the bottom surface of the substrate that constitutes a ground for the transmission line or antenna.
Reflector or dish antennas are commonly used in residential environments for receiving broadcast services, such as television channel signals from geostationary, or equatorial, satellites. Reflector antennas, however, are bulky and relatively expensive for residential use. Furthermore, inherent in reflector antennas are feed spillover and aperture blockage by a feed assembly, which significantly reduces their aperture efficiency. An alternative antenna, such as a patch antenna, overcomes many of the disadvantages associated with reflector antennas.
Patch antennas require less space, are simpler and less expensive to manufacture, and are more compatible than reflector antennas. A parabolic reflector antenna has a curved surface. A patch antenna can be made having a planar surface. Further, a patch antenna can achieve the concentration of an antenna beam in a particular direction by means of the application of one of several methods.
Patch antennas are particularly suitable for use as active antennas. An active antenna is an antenna having all of the necessary components, such as an antenna element, feeding circuits, active devices or active circuits, integrally provided on a monolithic substrate, thus producing compact, low cost, and multi-function antenna equipment.
Additionally, the planar structure of a patch antenna permits it to be conformed to a variety of surfaces having different shapes. Patch antennas can be designed to produce a wide variety of patterns and polarizations, depending on the mode excited and the particular shape of the radiating element used. This results in the patch antenna being applicable to many military and commercial devices, such as, for example, use on aircraft or space antennas.
There is an increasing demand for the use of patch antennas in wireless communication due to their inherently low back radiation, ease of conformity and high gain as compared to wire antennas. The patch antenna design prevents large amounts of radiation from being produced at the back of the antenna.
Patch antennas comprise one or more conductive rectilinear or ellipsoidal patches supported relative to a ground plane and radiate in a direction substantially perpendicular to the ground plane. As opposed to a conventional wire-based antenna, generally the conventional patch antenna comprises a plurality of generally planar layers including a radiating element, an intermediate dielectric layer, and a ground plane layer. The radiating element is an electrically conductive material imbedded or photo etched on the intermediate layer and is generally exposed to free space.
Depending on the characteristics of the transmitted electromagnetic energy desired, the radiating element may be square, rectangular, triangular, or circular and is separated from the ground plane layer. An exemplary conventional patch antenna may include a transmission line feed, multiple dielectrics, and a metalized patch on one of the dielectrics. In a typical conventional patch antenna, the radiator element is provided by a metallic patch that is fabricated onto a dielectric substrate over a ground plane.
The conventional dual-band signal-layer patch antenna has been widely used in applications like radar and communication systems because of its advantages over a conventional antenna, such as lighter weight, lower profile and lower cost. Generally, dual-band single-layer patch antennas can be categorized into categories which include stub-type patch antennas, notch-type patch antennas, pin-and-capacitor-type patch antennas, and slot-loaded-type patch antennas.
The patch antenna has a very low profile and can be fabricated using photolithographic techniques. It is easily fabricated into linear or planar arrays and readily integrated with microwave integrated circuits. Patch antennas are commonly produced in half wavelength sizes, in which there are two primary radiating edges parallel to one another.
The performance of an antenna is determined by several parameters, one of which is efficiency. For a patch antenna, "efficiency," as used herein, is defined as the power radiated divided by the power received by the input to the antenna. A one-hundred percent efficient antenna has zero power loss between the received power input and the radiated power output. Factors that determine patch antenna efficiency include the loss in the dielectric material, the surface wave loss, and conduction losses. Traditional patch antennas, designed with a dielectric material, have about 80% efficiency. For example, if the patch array antenna, designed on the dielectric, is excited with an input power of 1 kilowatt (KW), the antenna will radiate 800 watts (W) while 200 W are lost.
Patch array antennas typically rely on traveling waves and require a complex feed network which contributes significant feed loss to the overall antenna loss. Furthermore, many patch antennas are limited to transmitting and/or receiving only a linearly polarized beam. The substrate is mounted on a larger ground plane, which serves as the return path for current induced on the patch element.
A patch antenna operates by resonating at a frequency. The patch antenna performs optimally when it is sized such that the cavity beneath the patch resonates in its fundamental mode at the frequency of interest.
Microstrip antennas and patch array antennas have been developed over many decades because of their low profile structures. These antennas are often designed on dielectric materials and can have reduced efficiency owing to dielectric losses
As stated in the foregoing, in view of the deficiencies of the prior art, there exists a need for a more efficient, low-cost, high power antenna system operable at high frequencies.
The publication entitled "Functional Test Results of a High Power Patch Array Antenna," Ly, Canh; January 2008; Report No.(s): AD-A475036; ARL-TR-4352; Defense Technical Information Center (DTIC), discloses mechanical and electrical test results of a high power two-patch array antenna. The mechanical test was run for 55 minutes for each axis of the antenna. The electrical test was conducted using a high power RF source (>1 KW) with single and two-patch array antennas. Although the first mechanical test results indicated that the screws of the antenna cover are loosened about ¼ turn, and right angle connectors inside the antenna enclosure box were loosened about a fraction of a turn, the antenna still sustained all functional operations. The antenna uses air dielectric to endure a high average power for the system that operates at S-Band in order to neutralize unattended microwave devices.

High efficiency and high power patch antenna and method of using

The United States of America as resprented by the Secretary of the Army


Bookmark services are provided in which user-selected bookmarks to favorite web pages are stored. In response to receiving a request for a web page from a particular user, the website operator may make a call to the bookmark service to obtain bookmarks that were previously selected by that user. The bookmark service forwards the bookmarks for the user to the website operator, and the website operator includes these bookmarks within the web page that is rendered to the user. Since the bookmarks are stored remotely at a bookmark service, the bookmarks may be available to the user regardless of the electronic device or web browser that is used to request a web page. The bookmarks that are rendered on the web page may also include recommended bookmarks to web pages that are deemed as possibly being of interest to a particular user.

Web browser programs are computer software applications that are designed to retrieve web pages (and other information) over the Internet and render the retrieved information on a display device where it can be accessed and viewed by a user. A user may request a web page from a remote server over the Internet by inputting an address in the form of a Uniform Resource Locator ("URL") into the web browser program, which causes the web browser program to request one or more files from the remote server that are needed to construct the web page and render it on the user's display device. Upon receipt of the requested file(s), the web browser program renders the information (e.g., a web page, a form, a video, etc.) in an appropriate format on the user's display device, typically in the form of an XML or HTML document.
Each web page has a unique URL. As there are a very large number of web pages in existence, many URLs comprise extremely long sequences of characters which most users find burdensome or annoying to type into their web browser program. In order to relieve user's of this burden, it is common for a web browser program to include a list of "bookmarks." A bookmark may be selected to navigate to a web page without requiring the user to have any information about the web page's URL. User's often "bookmark" frequently visited web pages to avoid having to type in the URL of a web page each time the user wants to view the web page.

Remotely stored bookmarks embedded as webpage content


A display apparatus comprising a display configured to display a plurality of spaces in a form of a polyhedron is provided. The plurality of spaces each correspond to a different category. The apparatus displays a rotatable Graphical User Interface (GUI), a user interface is configured to receive a user interaction for the GUI, and a controller is configured to, when one of the plurality of spaces in a form of a polyhedron is selected as the GUI is rotated according to the user interaction, control to display a selected space as a main space, and display at least one content-related information included in a category corresponding to the selected space.

1. Field
Methods and apparatuses consistent that the exemplary embodiments relate to a display apparatus and a user interface (UI) screen providing method thereof, and more particularly, a display apparatus which provides a three-dimensional (3D) UI screen and a UI screen providing method thereof.
2. Description of the Related Art
With the development of electronic technologies, various types of display devices (or apparatuses) are being developed. Specifically, display devices, such as television (TV) sets, personal computers (PCs), laptop computers, table PCs, mobile phones, MP3 players and the like, are used in most homes.
To meet the needs of users for devices that have newer and more varied functions, attempts are undergoing to develop display devices with new shapes. As one example, various types of interfaces to allow users to select desired information among numerous types of information have been recently proposed.
In view of such developments, a method for providing an interface screen which intuitively provides various types of information and is conveniently manipulated by a user is required.

Display apparatus and user interface screen providing method thereof


A dose setting mechanism for a drug delivery device is provided comprising a dose setting member, a drive member, a clutch, a first clicker and second clicker. The first clutch and a second clutch are designed and adapted to each other such that at any time during operation either the first clutch rotationally couples the dose setting member and the drive member and/or the second clutch rotationally couples the drive member and the first clicker component. Further, the invention refers to an injection device with such a dose setting mechanism.

In injection devices where the drive sleeve is coupled to the number sleeve via a clutch during dialing (dose setting) and coupled to the housing during dispense, via a clicker, and where coupling and decoupling is accomplished by a movement of the clutch member between a dialing (dose setting) and dispense position, it is important to ensure that in both general and misuse scenarios at extremes of tolerance, the user cannot decouple the drive sleeve from the number sleeve without first ensuring that it is sufficiently coupled to the housing.
If at any point the drive sleeve is neither coupled to the number sleeve nor to the housing with adequate strength, it may be possible for the user to rotate the drive sleeve relative to the number sleeve and housing. In devices where the drive sleeve has a threaded connection or splined connection to a piston rod that moves axially to expel the drug contents in the cartridge, rotating the drive sleeve relative to both the number sleeve and housing allows the user to back off the piston rod from the cartridge bung without decrementing the dialed dose, and this may lead to a severe under dose on the subsequent dose. If the drive sleeve is rotated in the opposite sense, it may also allow the user to expel drug without decrementing the dialed dose, leading to loss of drug and possible confusion.
FIG. 1 shows a known dose setting mechanism 1 where a spring 7 biases the clicker 6 into engagement with the clutch 5 and the clutch 5 into engagement with the number sleeve 3. Clicker teeth 6a, 6b of axial height 'Y1' engage between the clicker 6 and clutch 5 components and the clutch teeth 5a, 5b of axial height 'Z1' engage between the clutch 5 and the number sleeve 3 components. In this 'At rest' state a gap of 'X1' exists which is defined as the amount that the clicker 5 can move axially towards the drive sleeve 4 before the spring 7 is compressed to a solid state and prevents further axial movement.
This gap 'X1' has a total tolerance of 'T' which is made up from the addition of the individual tolerances of the component parts, clicker axial length, clutch axial length, number sleeve flange thickness, drive sleeve axial length and the spring height when compressed solid.
For the device to be dialable, the gap 'X1' in its minimum tolerance condition, X1-T, must still be large enough to allow the clicker teeth 6a, 6b to ride over each other during dialing so that the clutch 5 and hence drive sleeve 4 can rotate relative to the number sleeve 3. Hence the device must comply with the equationX1−T>Y1.
Similarly in order for the device to be able to dispense the gap X must be large enough to allow the clutch teeth 5a, 5b between the clutch 5 and number sleeve 3 to disengage. In this case, the device must comply with the equationX1−T>Z1.
In addition, to ensure that the drive sleeve 4 is either rotationally coupled via the clutch 5 to the number sleeve 3 or rotationally coupled to the housing 2 via the clutch 5 and clicker 6, and is not in some indeterminate state where it can rotate relative to both parts, the device must comply with the equationX1+T<Z1+Y1−K
where K is defined as the minimum overlap between either the clicker teeth 6a, 6b or the clutch teeth 5a, 5b to ensure that the drive sleeve 4 has sufficient engagement with one of these sets of teeth so as not to rotate relative to both sets. This minimum overlap K will have to be larger if the device is to be able to withstand rotation of the drive sleeve 4 relative to the housing 2 and the number sleeve 3 under a reasonable user applied torque. Adding the tolerance T to X1 allows to define a worst case combination of parts for this failure mode.
Combining the above three equations,X1−T>Z1  (1)X1−T>Y1  (2)andX1+T<Z1+Y1−K  (3)
one can substitute from (1) X1=Z1+T into (3) to giveY1>2*T+K
and from (2) one can substitute X1=Y1+T into (3) to giveZ1>2*T+K.
Due to the long tolerance chain identified above this total stack tolerance of T may be as much as T=0.4 mm, and to ensure adequate strength K=0.4 mm as well. In this case Y1 must be greater than 2*0.4 mm+0.4 mm=1.2 mm. The clicker teeth 6a, 6b however have e.g. 24 positions per turn and hence 24 teeth. A height of 1.2 mm would require the clicker teeth to have a very steep flank angle given the restricted diameter of the part, and this flank angle would either make dialing not possible or give a very high dialing torque. In prototypes tested the clicker teeth height was only 0.7 mm and this gave a reasonable dialing torque.
WO 2006/037434 A1 discloses a drive mechanism for a drug delivery device. The embodiment of FIGS. 2 to 6 of this document includes a first clutch between a dose setting dial and an inner cylinder and a second clutch between the inner cylinder and a release knob. However, WO 2006/037434 A1 does not teach that at any time during operation either the first clutch couples the dose setting member a the drive member and/or the second clutch couples a drive member to a clicker component. Moreover, a clicker producing a tactile and/or audible feedback is not described in this document. In addition, in the mechanism of WO 2006/037434 A1 there is no clutch member located between the dose setting member to a drive member which clutch member is movable relative to these components in an axial direction.

Dose setting mechanism and injection device


An integrated circuit chip includes a substrate, a device layer, an interconnection layer, a sealing base layer and a sealing ring stack layer. The substrate has a sealing region and a chip region. The sealing region is disposed around the chip region. The device layer is disposed within the chip region. The interconnection layer is disposed over and connected with the device layer. The sealing base layer is disposed within the sealing region. The sealing ring stack layer is disposed over and connected with the sealing base layer. A manufacturing process of the integrated circuit chip is also disclosed.

1. Field of Invention
The present invention relates to an integrated circuit chip and a manufacturing process of the integrated circuit chip, and more particularly to an integrated circuit chip and a manufacturing process of the integrated circuit chip capable of preventing an internal structure of the integrated circuit chip from being damaged by a crack generated by a stress.
2. Related Art
A semiconductor wafer is formed into a plurality of integrated circuit chips after the semiconductor manufacturing processes are performed. Each integrated circuit chip includes a device region and a peripheral circuit region. The finished semiconductor wafer has to be sliced into bare chips, which are then packaged and tested to form the integrated circuit chips.
In the process of slicing the wafer, the generated slicing stress tends to cause a crack, which may damage the internal circuit of the integrated circuit chip. Thus, a sealing ring structure is formed between the integrated circuit chip and a scribing line in order to protect the structure of the integrated circuit chip.
Referring to FIGS. 1a and 1b, a conventional integrated circuit chip 1 includes a substrate 11, a device stack layer 12 and a sealing ring stack layer 13. The substrate 11 has a sealing region 111 and a chip region 112. The sealing region 111 is disposed around the chip region 112. The device stack layer 12 is disposed within the chip region 112 of the substrate 11 and has internal traces (not shown). The sealing ring stack layer 13 is disposed within the sealing region 111 of the substrate 11 and has a sealing base layer 131 and a plurality of sealing layers 132. The sealing base layer 131 is an electrically conductive region, which provides a ground for the sealing ring stack layer 13 and is formed by a boron-doped silicon or a phosphorus-doped silicon. Each sealing layer 132 is an electrically conductive layer made of aluminum, silver, copper or their alloy.
As shown in FIG. 2, the flip chip packaging technology is generally adopted with the progress of the technology of packaging. An active surface 14 of the integrated circuit chip 1 is directly electrically connected with a carrier 2. During the packaging process, the sealing base layer 131 cannot isolate a crack 15 generated by an external force from entering the integrated circuit chip 1 because a gap exists between the bottom surface of the substrate 11 and the sealing ring stack layer 13. Thus, the internal traces in the device stack layer 12 tend to be damaged. The crack 15 may not damage the internal traces during the packaging process. However, when the tests including a temperature cycle test and a thermal shock test are performed after the chip is packaged, the crack 15 may further enter the integrated circuit chip 1 due to thermal expansion and contraction, thereby damaging the internal traces of the integrated circuit chip 1. In addition, the integrated circuit chip 1 tends to be damaged by the external force in a transporting process or other manufacturing processes.
It is therefore an important subject of the present invention to provide an integrated circuit chip and a manufacturing process of the integrated circuit chip to prevent an internal structure of the integrated circuit chip from being damaged by a crack generated by a stress.

Integrated circuit chip and manufacturing process thereof


A torque measuring device for measuring the torque of a rotatable shaft. A sensing unit senses the torque on the rotatable shaft. The sensing unit is disposed on the outer surface of the rotatable shaft. A reporting unit is configured to report the torque applied to the rotatable shaft to a central control unit. The reporting unit is mounted at an end of the rotatable shaft.

The present invention generally relates to measuring the torque on a rotatable shaft and more particularly to non-intrusively measuring the torque on a shaft at high rotational speeds.
Historically, torque measuring for vehicles has been performed using a dynamometer in a laboratory setting. A dynamometer is used to determine the amount of horsepower an engine generates. A dynamometer includes an engine under test, a drive shaft and a torque measuring sensor. The engine is run under an artificial load, and the torque sensor measures the amount of torque the drive shaft is subjected to while the engine is operated at a constant speed. Since engine horsepower is equal to the torque times the rotational speed of the engine, if the engine is held to a constant rotational speed, the amount of torque can be measured and the amount of horsepower the engine generates can be obtained. Once the amount of horsepower is determined, adjustments to the control of the engine can be made to increase the amount of horsepower generated.
Conventional methods and apparatus for measuring torque in real time on a vehicle involve mounting large invasive devices on the drive shaft of the vehicle to determine the amount of torque generated by the engine. However, because these devices are invasive, they negatively effect the performance of a vehicle using the device by adding mass, increasing the tire path of the vehicle, and changing the center of gravity of the vehicle. As a result, with conventional technology the benefit of controlling engine performance using actual horsepower generated is outweighed by the additional weight and performance restrictions created by the conventional torque measuring devices.
In high performance automobiles in particular, adjustment of engine control in real time to produce the maximum amount of horsepower from the vehicle's engine is beneficial. However, the conventional sensors are limited to engine speeds less than 5,000 rotations per minute (RPM) because the sensing devices become separated from the driveshaft due to the extreme torque experienced at higher engine speeds. Since high performance automobiles operate at engine speeds of 5,000 RPM and higher, conventional sensing devices are not capable of providing real time sensing of torque. Additionally, as stated above, the conventional torque sensors are intrusive and negatively effect the performance of the engine due to their position on the driveshaft. This becomes amplified in high performance vehicles which are more susceptible to variations in weight and other performance modifications. As a result, a need exists to provide a torque sensor capable or withstanding engine speeds at high RPMs and that does not effect the performance of the vehicle.

Torque measurement device for measuring torque on rotatable shafts at high speeds


Methods of treating a brain malfunction include obtaining a subject diagnosed with a brain malfunction and reducing EEG frequency of brainwaves in the subject by applying at least one EEG-slowing stimulus to the subject, whereby production of beta amyloid protein in the brain of the subject is reduced and progression of the brain malfunction is halted or slowed.

Several brain malfunctions or diseases are caused or exacerbated by high levels of beta amyloid protein. Examples of these brain malfunctions include Alzheimer's disease, Down Syndrome and Fragile X Syndrome. Alzheimer's disease (AD) is the most common cause of age-related dementia, affecting over 5 million individuals in the US alone. Death as a result of AD occurs, on average, nine years after diagnosis with a devastating effect on quality of life and burden on caregivers throughout the course of the disease.
The first brain structures damaged in AD are those serving short term memory (hippocampus and neighboring temporal lobe). The disease then spreads to the parts of the temporal, parietal and frontal lobes which function in memory, judgment and cognition. Parts of the brain that are specialized for sensory and motor functions are relatively spared, especially the occipital lobe (visual system). The regions of the brain which have been characterized as most vulnerable to AD are known as the "default mode network" (DMN), a system in the cerebral cortex that becomes active when attention isn't focused on a specific mental task. One estimate is that people spend 50% of waking time in the mental activities mediated by the DMN. The DMN is integral in recalling past events, anticipating future events, providing the sense of self and the intuitive grasp of the emotions of others, and making future plans. The DMN has the highest metabolic rate of cortical areas, which likely accounts for its vulnerability in AD. Compounding the problem is that the DMN is spread widely over the cerebral hemispheres, requiring neurons with long axons to maintain coordination. AD causes the DMN to become even more active, possibly in an attempt to compensate for lost neurons.
Conventional therapies for treating AD focus on controlling symptoms rather than halting or slowing progression of the disease. In practice, the benefits of presently-available treatment strategies last typically only up to about 2 years. Drugs which are being tested for treatment of AD may not be available for years. In the meantime, the demand for a course of therapy that halts or slows progression of the disease is enormous.
The currently accepted theory regarding the cause of AD is that the disease results from an excess buildup of a normal protein known as beta amyloid in the brain. Beta amyloid is normally discharged into synapses between neurons and transiently binds to neurotransmitter receptors at nerve cell membranes, after which it is cleared from the synapse by one of several mechanisms, primarily by transport away from the brain through the bloodstream.
There is ample evidence that excess beta amyloid results from diminished clearance of the protein from the brain even when normal protein production levels prevail. The capacity and effectiveness of clearance declines with age; therefore, AD can be viewed as an exaggeration of the effects of normal aging. Most of the insufficiently-cleared beta amyloid protein aggregates outside of cells in structures known as plaques that are visible under a light microscope. At the stage of AD when the loss of neurons begins, the plaques are close to maximal size. Chemical analysis shows up to 1000 times the normal level of beta amyloid in brain tissue from AD patients, and this beta amyloid exists almost entirely in the form of plaque. The toxic form of beta amyloid is one of the small aggregates (dimers, oligomers and fibrils) which reach toxic levels only at a critical concentration. A small decrease in the production of beta amyloid in brain tissue may potentially slow or halt the course of the disease.
Accordingly, methods for treating brain malfunctions which are caused or exacerbated by excessive levels of beta amyloid protein by reducing the production of the beta amyloid in brain tissue through entrainment, binaural beats and/or neurofeedback may be effective in the treatment of AD and other related conditions.


An apparatus to prevent oxidation of an electronic device, such as a semiconductor substrate during a semiconductor packaging process, comprises a substantially-enclosed conduit having at least one movable support defining a path through which the electronic device may travel and a plurality of gas outlets to introduce a relatively inert gas into the conduit. Conveying means adapted to engage and move the electronic device along the conduit is provided, and an opening along a portion of the conduit allows engagement between the conveying means and the electronic device. Actuating means are adapted to shift the movable support whereby the size of the path is adjustable to suit different electronic devices.

Semiconductor substrates serve as substrates for the manufacture of certain semiconductor packages onto which semiconductor dice or integrated circuit chips are attached during packaging. Conventionally, substrates are made from iron alloys. However, with an increasing demand for higher performance miniaturized packages, more reactive metals, in particular copper alloy substrates are finding increasing applications in semiconductor packages. These substrates are found to be more attractive than iron alloy substrates due to factors such as better heat dissipation, ease of processing and their lower cost. On the other hand, the disadvantage of copper alloy is that it is prone to oxidation (ie. it reacts with oxygen to produce copper oxide) when exposed to oxygen in the air at high temperatures. Such oxidation results in oxygen forming weak bonds with the atoms at the substrate surface, and a layer of brittle and/or poorly adhering oxides. Thus, oxidation introduces reliability problems for semiconductor packages.
The problem of oxidation is particularly acute during wire-bonding in a typical semiconductor packaging process, wherein conductive bonding wires are bonded to contact surfaces on a semiconductor die and a substrate to establish electrical connections therebetween. In a wire-bonding machine, a substrate may typically be introduced onto a heating plate first for pre-bond heating. Thereafter, the substrate is conveyed to a bonding area to perform wire bonding. After wire-bonding, the substrate needs to be conveyed out of the wire-bonding machine. The substrate should typically be pre-heated to a certain temperature before actual wire-bonding is carried out. Such pre-bond heating may be accomplished by placing the substrate on a heating plate during conveyance to the bond-site. Actual wire-bonding is then commonly done by using an ultrasonic transducer to generate mechanical vibration energy with an external pressure force to bind the wire to the die and substrate surfaces. Heat generated during the conveyance or actual wire-bonding processes may oxidize the surface of the substrate if the substrate is not protected from oxygen in the atmosphere, leading to non-stick or unreliability of the bonds made.
An industry practice for protecting substrates from oxidation is to introduce large amounts of a relatively inert gas, usually nitrogen gas, to the substrate. The nitrogen gas will reduce the amount of oxygen in the immediate vicinity of the substrate, and thus prevent oxidation of the substrate. Therefore, it is preferable for the substrate to be channeled through a nitrogen-rich conduit during the above processes.
One way this can be done is to build a so-called heat-tunnel wherein the substrate is conveyed through an enclosed space filled with nitrogen gas, such that exposure of the substrate to the atmosphere is minimized. However, as will be explained in more detail with reference to FIGS. 1 & 2, the conventional heat-tunnel system has its disadvantages. As shown in FIG. 2, the heat-tunnel comprises a work holder system, tunnel cover and a pin indexer, each of which is designed for a particular shape or size of substrate. If a different substrate were to be used, all the parts comprising the heat-tunnel have to be changed. As a result, longer down-time in the production line is incurred, and the changes demand repeated design effort and costs. Skill is needed to reset the system mechanically. Moreover, the use of the indexing pin to move the substrate through the heat-tunnel is inflexible, in that different sizes of pins have to be used for different sizes of corresponding indexing holes on the substrates and a slot in the tunnel cover allowing for pin movement has to be appropriate to cater to the pitching distance of the substrate in question.

Conduit for preventing oxidation of a electronic device


Disclosed is a method for informing a mobile communication terminal of an entrance into a specific service network in a mobile communication system and a method for changing an incoming call indication mode to a vibration or silent mode. The method for informing a user of a private mobile communication service possible area when a mobile communication terminal enters a private mobile communication network being interoperable with a public mobile communication network includes the steps of: a) upon receiving a system parameter message being broadcast by the private mobile communication system, checking a predetermined bit for indicating the private mobile communication service area contained in the system parameter message, and determining whether the mobile communication terminal exists in the private mobile communication service area; b) if the mobile communication terminal exists in the private mobile communication service area, transmitting a location registration message having a predetermined registration type to the private mobile communication system; c) receiving a message indicating a private mobile communication service possible state from the private mobile communication system according to registration result information of the private mobile communication system; and d) informing the user of the private mobile communication service possible state.

1. Field of the Invention
The present invention relates to a mobile communication system, and more particularly to a method for providing a mobile communication terminal with a private mobile communication service when the mobile communication terminal enters a private mobile communication network in a private mobile communication system interoperable with a public mobile communication network.
2. Description of the Related Art
Typically, a mobile communication network is classified into a public mobile communication network and a private (or office) mobile communication network, but it is impossible for the public mobile communication network to be interoperable with the private mobile communication network. That is, a mobile communication system is designed and implemented to enable only a public mobile communication service or only a private mobile communication service, so that a subscriber of a mobile communication terminal registered in a network can receive a communication service over a specific network with which the subscriber is registered.
Therefore, a subscriber of a mobile communication terminal registered in the public mobile communication network cannot receive a private mobile communication service, and a subscriber of a mobile communication terminal registered in a private mobile communication network cannot receive a public mobile communication service. As a result, it is necessary for a subscriber of a mobile communication terminal to receive a public mobile communication service and a private mobile communication service at the same time, using a single mobile communication terminal. In case of implementing a system for providing public and private mobile communication services at the same time, it is necessary for the system to determine whether a called party's call is a call generated from a public mobile communication network or a call generated from a private mobile communication network in case of a call termination.
Therefore, many developers are intensively conducting research into a new communication service method for enabling a subscriber of a mobile communication terminal registered in a public mobile communication network to receive a private mobile communication service along with a public mobile communication service. A representative example has been disclosed in Korean Patent Application No. 2000-028172, filed on 24 May 2000, by the same applicant as the present invention, and entitled "System for enabling Wireless Private Network Service by registering Public Network Mobile Communication Terminal in Office Wireless Private Network", which is hereby incorporated by reference.
However, in the case where a mobile communication terminal registered in both a public mobile communication network and a private mobile communication network enters a zone of the private mobile communication network while using the public mobile communication network, it is difficult for a user of a mobile communication terminal to recognize the entrance into the zone of the private mobile communication network before recognizing whether he or she is in a public land mobile network area or in a private mobile communication network area.

Method for informing mobile communication terminal of entrance into specific service network in mobile communication system and method for changing incoming call indication mode to vibration or silent mode


The colored liquid composition of the invention for a highlighter comprises a coloring element and water, the water content by weight lies in the range 10% to 30%. In addition, it comprises at least 40% of a liquid component having surface tension greater than 40 mN/m. In a variant, the coloring element is a tracer solvent having a fluorescent appearance under basic pH, in particular hydroxypyrenetrisulfonic acid, the pH of the composition lying in the range 8 to 9, and the component having surface tension greater than 40 mN/m is triethanolamine. Under such circumstances, the composition contains an acid to neutralize the triethanolamine in part in order to obtain the basic pH, for example hydrochloric acid.

Three types of colored liquid compostions or inks are already known for highlighting pens that serve to highlight text or make it stand out optically.
In the first type, the ink is a traditional colored ink in which the dye(s) is/are at low concentration so as to avoid masking the text which is to be highlighted. Generally such an ink is based on a solvent containing about 70% water and 30% diethylene glycol.
In the second type, concentrated ink is used containing 50% water and 50% fluorescent dye coated in resins that are put into emulsion in water. The concentrated ink is used for making the colored liquid composition for use in the highlighter at a concentration of 20% to 30% by weight, with the reminder of the composition being constituted by a water-retaining agent such as glycerin, sorbitol, diethylene glycol, or triethylene glycol which avoids the tip of the writing instrument drying out too quickly.
In the third type, the colored liquid composition makes use of water-soluble fluorescent dyes and requires the physico-chemical characteristics of the composition to be adapted to obtain a compromise between the fluorescent effect and the properties of the writing instrument in use. By way of example, a colored liquid composition of this type is disclosed in document EP 0 464 304, which composition is based on an aqueous solution of hydroxy-pyrenetrisulfonic acid with basic pH. Such a composition contains 5% to 20% by weight compared with the total weight of liquid of mono-, di-, or trisaccharides obtained by reducing the polyols from which they are derived or by mixing said substances.
Colored liquid compositions for highlighters, in all three of the above-specified types, present the same defect when highlighting text that was previously written using a fountain pen or a roller (ball felt tip) having an ink formulation based on water-soluble dyes. Under such circumstances, it is found that the colored liquid composition of the highlighter moistens the ink of the text and partially dissolves the dyes contained in said ink. As a result the dyes constituting the written text become smeared in the highlighted passages, giving a particularly unpleasing appearance. Furthermore, the tip of the highlighter is also polluted to some extent by the dyes that it has partially dissolved from the ink of the written text.

Colored liquid composition for editing pen


The invention relates to a novel and distinct hybrid plant named xe2x80x98Brick Beautyxe2x80x99 (Gladiolus sp.) characterized by its attractive Brick red colored flowers with Dresden yellow color on the lip petals.

The present invention relates to a novel hybrid plant named xe2x80x98Brick Beautyxe2x80x99 and belonging to the family Iridaceae. The novel plant being a hybrid, has been developed in a breeding programme. The novel plant xe2x80x98Brick Beautyxe2x80x99 is propagated vegetatively by corms and hence can be maintained as a stable genotype. The plant of the invention is an ornamental plant widely cultivated for beautiful flowers which are of commercial and export value.
The present invention relates to a new and distinct variety of gladiolus, a member of the Gladiolus genus.
The present invention relates to a new and distinct variety of gladiolus, a member of the Gladiolus genus. The novel plant is the hybrid between the gladiolus plants xe2x80x98Vink Gloryxe2x80x99 and xe2x80x98Eurovisionxe2x80x99, which are hybrid varieties.
Gladiolus is one of the important cut flowers throughout the world. The commercial cultivation is wide spread in temperate, tropical and subtropical climates. The demand of new varieties with better color, quality flowers, and planting materials is always existing in the floriculture trade.
The modern garden cultivators gladiolus come from diverse genetic parentages. It has cumulative heterozygosity for many characters inherent with complex genetic constitution. In gladiolus, diverse parents are crossed together and the cultivars and the species that differ widely in chromosome numbers are also cross-fertile. In the present invention, the desirable strains obtained in F1 generation were perpetuated vegetatively without being segregated in the following generations, so that the cultivars which are available today may be F2, F3 to F8 or so of a particular cross further blended with some extra parents at nearly every generation. Thus, they are not allowed to segregate freely in further generations because it is desirable to grow the plants asexually. Because of this reason, now the available modern cultivars have become so complex that the offspring obtained by crossing them, even two seedlings, do not appear similar [(Misra, 1975) Gladiolus Br. Assn. Newsletter, No.12, pp. 2-5].
The Applicants collected germplasm of different cultivars and hybrid varieties of gladiolus from National Botanical Research Institute Lucknow, India as per the list of gladiolus cultivars grown in India and described in the bulletin of xe2x80x98gladiolusxe2x80x99 Economic Botany Information Service by Sharma et al. published by the Director National Botanical Research Institute Lucknow, 1988. Germplasm of gladiolus was also collected from Netherlands in 1991 and various nurseries of Kalimpong, Darjeeling, West Bengal, India. The record of the collected germplasm of gladiolus was maintained in the accession register of the Floriculture Division of the Institute of Himalayan Bioresource Technology (IHBT), Palampur, India.
The Applicants initiated a breeding program to develop better types of gladiolus hybrids suitable to wide range of climatic conditions, and having wide range of characteristics such as better color, increased number of florets and spike length as per the international standards, better yield of corms and cormels, tolerant to the common diseases etc. The collected germplasm of gladiolus was planted in the experimental field of IHBT for their propagation and multiplication. In this breeding programme conventional breeding method (hybridization) was used. More than 100 cross combinations were made by using distinct varieties such as xe2x80x98Oscarxe2x80x99, xe2x80x98Jesterxe2x80x99, xe2x80x98Snow Princessxe2x80x99, xe2x80x98Eurovisionxe2x80x99, xe2x80x98Ballerinaxe2x80x99, xe2x80x98King Liarxe2x80x99, xe2x80x98Cherry Blossomxe2x80x99, xe2x80x98Her Majestyxe2x80x99, xe2x80x98Green Woodpeckerxe2x80x99, xe2x80x98Friendshipxe2x80x99, xe2x80x98Vink""s Gloryxe2x80x99, xe2x80x98Aldebaranxe2x80x99, xe2x80x98Red Beautyxe2x80x99, xe2x80x98Top Brassxe2x80x99, xe2x80x98Copper Kingxe2x80x99, xe2x80x98Bonfirexe2x80x99, xe2x80x98White Goddessxe2x80x99, xe2x80x98Sunny Boyxe2x80x99, xe2x80x98Tropic Seaxe2x80x99 and xe2x80x98Friendship Pinkxe2x80x99, etc.
Color description of some of the parentage as described in NAGC Bulletin.
xe2x80x98Oscarxe2x80x99: Turkey red, throat blotched sulphur yellow.
xe2x80x98Green Woodpeckerxe2x80x99: Pea Green, throat blotched pea green spotted ruby red.
xe2x80x98Eurovisionxe2x80x99: Signal red, throat streaked pea green.
xe2x80x98Friendship Pinkxe2x80x99: Dawn Pink, throat blotched pea green having splashes ruby red.
xe2x80x98Aldebaranxe2x80x99: Straw Yellow and throat blotched signal red.
As the aim is the production of seed of known parentage, emasculation in first three flowers in a selected spike is done before the opening of the flowers and stigma becomes receptive. Anthers are removed carefully from each flower. Emasculated flowers were covered with butter paper bags used for breeding purposes. Pollination was done in the emasculated flowers next day morning with in 24-30 hours with the pollens of the desired parents in the month of April-May 1991. The seeds were collected from mature pods in the month of August-September and were sown in beds under open field conditions and covered with dry grasses for moisture preservation in December 1991. The resultant seedlings were space planted in the field at Palampur in March-April 1992.
Many seedlings came out from a single cross combination. These plants were critically evaluated and tagged as per the desired color combinations, growth and flowering parameters. The corn and cormels of the selected hybrid plants were replanted continuously four years in the field for further evaluation and multiplications. Based on the superior performance for attractive color combination, compactness of flower spike, number of flowers per spike, length of flower spike, number of corm and cormels per plant evaluation and selection of superior quality hybrids were made.
Thus, the breeding program involved hybridization of commonly available gladiolus plants. In other words, the hybrids were developed by crossing parental genotypes involving sexual hybridization in the breeding programme.
The program yielded a number of hybrid plants out of which one genotype namely xe2x80x98Brick Beautyxe2x80x99 was selected and christened as xe2x80x98Brick Beautyxe2x80x99. This plant was found to have new color, flower size, number of florets per spikes, length of flower spikes, better yield of corm and cormels and less prone to common diseases. Growing the plant on a commercial scale offers the horticulturists an improved and new variety, which can be commercially cultivated.
Thus, the invention provides a new genotype christened as xe2x80x98Brick Beautyxe2x80x99. This plant has been developed through planned breeding experiments conducted at Institute of Himalayan Resources, (IHBT) Palampur, Himachal Pradesh, India with defined aim to develop superior gladiolus genotypes. For this purpose, gladiolus varieties were collected from different sources and grown in the fields at Palampur, India for facilitating breeding program. The emasculation and pollination in different varieties were carried out during the months of April-May 1991. The seeds were collected in July-August 1991 and sown in beds under open field conditions and covered with dry grasses in December 1991. The resultant seedlings were space planted in the field at Palampur in March-April 1992. The corm and cormels of survived hybrid plants were replanted continuously four years for screening and multiplication.
Based on the superior performance for attractive color combination, compactness of flower spikes, number of flowers per spikes, length of flower spikes, number of flowers remains open at a time, number of corm and cormel production per plant, the plant of this invention (xe2x80x98Brick Beautyxe2x80x99) was selected for further observation and evaluation.
Considering the superior characteristics like excellent color, number of flowers, compactness of flower spikes, plant height, ruffled-ness of flower petals, regeneration potential and freedom from common diseases, it was asexually reproduced through corms and cormels to maintain purity.
The selected hybrid xe2x80x98Brick Beautyxe2x80x99 was christened as xe2x80x98Brick Beautyxe2x80x99 and grown at row distance of 1 feet and plant to plant 6 inches for four consecutive years to study its growth and flowering performance and multiplication. Data were recorded on randomly selected twenty plants every year. The hybrid xe2x80x98Brick Beautyxe2x80x99 maintained uniformity in its growth and flowering performance.
The hybrid xe2x80x98Brick Beautyxe2x80x99 has remained stable and uniform for its morphological characteristics and showed consistency in performance for various growth and flowering parameters during its evaluation and vegetative multiplication since 1992. Throughout the evaluation period of xe2x80x98Brick Beautyxe2x80x99, no variants were found from the normal population.
The genotype xe2x80x98Brick Beautyxe2x80x99 possesses standard type flowers of Brick red (RHS-35A) with Dresden yellow (RHS-5D) color on lip petals and the flower petals are ruffled which is quite clear from FIG. 1.
The genotype xe2x80x98Brick Beautyxe2x80x99 is distinct in regeneration potential.

Gladiolus hybrid plant xe2x80x98Brick Beautyxe2x80x99

Council of Scientific and Industrial Research


According to one aspect of the present invention there is provided a support assembly for supporting a baby, the support assembly including: a support element on which a baby is supported in use; a chassis operatively connected to the support element, the chassis including adjusting means to provide adjustment to both the height and attitude of the support element relative to the chassis.

It is commonplace for breastfeeding women or other carers to hold a baby in their arms while breast- or bottle-feeding the baby. During this procedure, they carry the baby over a period of 10-30 minutes in their arms. The number of times they do that per day will depend upon the age and size of the baby, but it may be 4-8 times a day, and this may be for the first 3-24 months of the child's life.
Furthermore, there is additional time spent carrying the baby while attempting to settle them sufficiently so that they can sleep. These prolonged periods of carrying a baby to feed and/or settle, especially after a pregnancy of nine months can create a lot of stress on the back, neck and arms of a carer's body. Carers may end up having back pains, upper back pain, neck pains and the like.
The present invention seeks to ameliorate one or more of the abovementioned disadvantages.


An IGBT that exhibits a low on-voltage and a sufficient short circuit withstand capability and to provide a method of manufacturing such an IGBT. The p-type well region and the n-type emitter region are not formed by the self-alignment technique using the gate electrode as a common mask but by distributing the impurity ions using masks, the edges thereof being displaced for an offset length, by that the channel region is widened. The preferable offset length d is from 0.5 to 5.0 xcexcm.

The present invention relates to an insulate gate transistor that has an insulated gate structure formed of a metal layer, an oxide layer and a semiconductor layer.
FIG. 10 is a cross sectional view of the unit structure (the so-called xe2x80x9chalf cellxe2x80x9d) of a conventional insulate gate bipolar transistor (hereinafter referred to as an xe2x80x9cIGBTxe2x80x9d), that is a type of insulate gate transistor. Referring now to FIG. 10, a p-type well region 4 is in the surface portion of an n-type drift layer 3. A heavily doped p+-type contact region 5 is in p-type well region 4. An n-type emitter region 6 is in the surface portions of p-type well region 4 and p+-type contact region 5. A gate electrode 7 is above the semiconductor structure with a gate oxide film 10 interposed therebetween from n-type emitter region 6 to n-type emitter regions 6 of the adjacent unit structure. An emitter electrode 9 is in common contact with n-type emitter region 6 and p+-type contact region 5. A collector layer 2 is on the back surface of n-type drift layer 3. A collector electrode 1 is on the back surface of collector layer 2. Emitter electrode 9 is extended above gate electrode 7 with an interlayer insulation film 8 interposed therebetween.
FIG. 11 shows cross sectional views explaining the steps 11(a) through 11(f) for manufacturing the IGBT of FIG. 10. In FIG. 11, only the emitter side of the IGBT is shown for the sake of simplicity. Referring now to the cross section (a) of FIG. 11, a thin gate oxide film 10 is formed on n-type drift layer 3 by thermal oxidation. A polycrystalline silicon film is deposited on gate oxide film 10, and a gate electrode 7 is formed by patterning the deposited polycrystalline silicon film by photolithography. As shown in FIG. 11(b), boron ions 14a are selectively implanted using gate electrode 7 as a mask. The implanted boron atoms are designated by a reference numeral 14b. Referring now to FIG. 11(c), a p-type well region 4 is formed by activating implanted boron atoms 14b by a heat treatment. Boron ions 15a are selectively implanted using a patterned photoresist 11 as a mask for the ion implantation as shown in FIG. 11(d). The implanted boron atoms are designated by a reference numeral 15b. Referring now to FIG. 11(e), arsenic ions 16a are implanted using gate electrode 7 and a patterned photoresist 12 as masks for the ion implantation. The implanted arsenic atoms are designated by a reference numeral 16b. As shown in FIG. 11(f), p+-type contact region 5 and n-type emitter region 6 are formed by activating the implanted boron atoms 15b and the implanted arsenic atoms 16b by a heat treatment. According to the manufacturing method described above, p-type well region 4 and n-type emitter region 6 are self-aligned by ion implantation using the same gate electrode 7 as a mask for defining one end of p-type well region 4 and one end of n-type emitter region 6.
In the IGBT exhibiting the breakdown voltage of the 600 V class, p-type well region 4 is 4 xcexcm in depth, p+-type contact region 5 is 3 xcexcm in depth, and n-type emitter region 6 is 0.3 xcexcm in depth. And, the width of the surface portion of p-type well region 4 between n-type emitter region 6 and n-type drift layer 3, that is the channel length, is about 1 xcexcm.
Recently, the diffusion depth of the p-type well region has become reduced to reduce the loss of the IGBT (cf. M. Otsuki, et. al., xe2x80x9cThe 3rd generation IGBT toward a limit of IGBT performancexe2x80x9d, Proc. ISPSD ""93, pp. 24-29, (1993), and T. Kushida, et. al., xe2x80x9cA He irradiated IGBT with a shallow p-base and shallow FLRsxe2x80x9d, Proc. ISPSD xe2x80x297, pp. 277-280, (1997)).
However, when the diffusion depth of the p-type well region is limited to be shallow, the lateral diffusion length is shortened, resulting in a shortened channel length. Due to the shortened channel length, the current caused by short-circuiting of the load (load short-circuit current) is increased and, therefore, the short circuit withstand capability of the device is reduced.
Various countermeasures have been proposed to obviate the above described problem and to secure a certain short circuit withstand capability. The proposed countermeasures include patterning the emitter structure for shortening the channel length in the MOS structure (cf. Akio Nakagawa, DE 3 519 389 A1) and combining n-type and n+-type impurity distributions for forming the emitter region (J. Zeng, et. al., xe2x80x9cDesign of IGBTs for Latch-up Free Operationxe2x80x9d, Solid State Electronics vol. 37, No. 8, pp. 1471-1475, (1994), and Kenji Suzuki, EP 0 336 393 A2).
The countermeasures described above, however, obtain a sufficient short circuit withstand capability at the sacrifice of on-state voltage drop of the device. Although the electrons injected into the n-type drift layer of the IGBT may be controlled, the above described countermeasures are not so effective to improve the latch-up withstand capability of the npn transistor formed of an n-type emitter region, a p-type well region and an n-type drift layer. Due to the unimproved latch-up withstand capability, it is impossible to prevent the parasitic npnp thyristor, formed of n-type emitter region 6, p-type well region 4, n-type drift layer 3 and p-type collector layer 2, from latching up.
In the ON-state of the IGBT, the injected electron current Id (in the saturation region) is expressed by the following equation.
Id=(Z/L)xcexcCo(Vgxe2x88x92Vth)2xe2x80x83xe2x80x83Eq. (1)
Here, Z is the circumferential length of the channel region, L the channel length, Co the gate capacitance, Vg the gate voltage and Vth the threshold value.
The IGBT is a device that uses the injected electron current as a base current to drive the pnp transistor formed of p-type well region 4, n-type drift layer 3 and p-type collector layer 2. The on-voltage of the IGBT has been reduced so far by increasing Z, by shortening L and by lowering Vth. The most popular way of reducing the on-voltage is to reduce the diffusion depth of the p-type well region so that the channel length L may be shortened.
FIG. 12 is a cross sectional view for analyzing the on-voltage components in the IGBT. Referring now to FIG. 12, the on-voltage of the IGBT consists of a voltage drop 20 across the channel resistance in a channel region 17 in the surface portion of p-type well region 4, a parasitic junction FET (JFET) component 21 formed of p-type well regions 4 and 4 on both sides and n-type drift layer 3, a voltage drop 22 in n-type drift layer 3, and a voltage drop 23 in p-type collector layer 2.
The reduction of the on-voltage by reducing the diffusion depth of p-type well region 4 is attributed to the reduction of the voltage drop 20 in channel region 17 and the reduction of the JFET component 21. Since the load short-circuit current is defined by the foregoing equation (1), the short circuit withstand capability in the short-circuiting of the load is reduced as the short-circuit current is larger.
It is important for the practical power device to exhibit a low on-voltage and a small short-circuit current. However, there exists a close relation between the on-voltage and the short circuit withstand capability. Shortening of the channel length by shallowly diffusing p-type well region 4 causes reduction of the short circuit withstand capability of the device, since the short diffusion depth of p-type well region 4, that lowers the on-voltage (reduces the loss), increases the short-circuit current.
Thus, it is substantially impossible for the foregoing countermeasures to independently control the channel length and the diffusion depth, i.e. the reduction of the on-voltage and the increase of the short-circuit current by shortening the channel length of the MOSFET and the reduction of the on-voltage by reducing the parasitic JFET component.
In view of the foregoing, it is an object of the invention to provide an IGBT that exhibits a low on-voltage and a sufficient short circuit withstand capability. It is another object of the invention to provide a method of manufacturing such an IGBT.
The invention providea an IGBT that exhibits a low on-voltage and a sufficient short circuit withstand capability and a method of manufacturing such an IGBT.
According to the invention, the well region of the second conductivity type and the emitter region of the first conductivity type are not formed by double diffusion using the gate electrode as a common mask. The well region and the emitter region are formed with a certain offset left beneath the gate electrode.
According to an aspect of the invention, there is provided an insulated gate transistor including: a lightly doped drift layer of a first conductivity type; a well region of a second conductivity type in the surface portion of the drift layer; an emitter region of the first conductivity type in the well region; a channel region in the extended portion of the well region extended between the emitter region and the drift layer; a gate electrode above the extended portion of the well region with a gate oxide film interposed therebetween; an emitter electrode in common contact with the well region and the emitter region; a collector electrode on the back surface of the drift layer; and an offset portion introduced into the extended portion of the well region to expand the width of the channel region.
The channel length is controlled by adjusting the width of the offset portion (offset length) and the diffusion depth is controlled independently of the channel length by adjusting the conditions for driving the channel region. The short-circuit current is reduced, that is, a certain short circuit withstand capability is secured, by expanding the channel length to some extent and the on-voltage is lowered by reducing the diffusion depth of the well region in the same insulated gate transistor.
According to another aspect of the invention, there is provided the method of manufacturing an insulated gate transistor, including a lightly doped drift layer of a first conductivity type, a well region of a second conductivity type in the surface portion of the drift layer, an emitter region of the first conductivity type in the well region, a channel region in the extended portion of the well region extended between the emitter region and the drift layer, a gate electrode above the extended portion of the well region with a gate oxide film interposed therebetween, an emitter electrode in common contact with the well region and the emitter region, and a collector electrode on the back surface of the drift layer, the method including: changing the effective mask edge location by an offset length between forming the well region and forming the emitter region to expand the width of the channel region.
The expanded width of the channel region, expanded by the offset length by the manufacturing method according to the invention, suppresses the JFET component of the on-voltage at a minimum value and secures a channel length long enough to obtain a certain short circuit withstand capability.
Preferably, the width of the offset portion (offset length) is from 0.5 to 5.0 xcexcm. When the offset length is shorter than 0.5 xcexcm, the short circuit withstand capability is small. When the offset length is longer than 5.0 xcexcm, the on-voltage is too high. Therefore, the offset length outside the range between 0.5 xcexcm and 5.0 xcexcm is not practical.
The impurity concentration beneath the surface of the extended portion of the well region is preferably constant for the width of 0.5 xcexcm or more.
According to the manufacturing method of the invention, the impurity concentration beneath the surface of the p-type well region is constant for the offset length. The region, therein the impurity concentration is constant, proves that the p-type well region and the n-type well region are offset from each other.
Preferably, different masks are used for implanting the impurity ions to form the p-type well region and to form the n-type emitter region. By using different masks, the p-type well region and the n-type well region are offset from each other easily. The masks, the thickness thereof is different, are used and the acceleration voltage is changed for implanting the impurity ions to form the p-type well region and to form the n-type emitter region.
Preferably, a common mask, the thickness thereof is tapered, is used for implanting the impurity ions to form the p-type well region and to form the n-type emitter region. The common mask is preferably made of polycrystalline silicon, the polycrystalline silicon mask is damaged by ion implantation, and the mask is provide with a tapered edge portion, formed by utilizing the etching rate difference between the polycrystalline silicon and the damaged layer. The polycrystalline silicon mask having a tapered edge portion facilitates offsetting the p-type well region and the n-type emitter region from each other.
According to still another aspect of the invention, there is provided a trench-type insulated gate transistor including: a lightly doped drift layer of a first conductivity type; a well region of a second conductivity type in the surface portion of the drift layer; an emitter region of the first conductivity type in the well region; a trench dug from the surface of the emitter region down to the drift layer; a channel region in the well region, the channel region facing to the trench, the thickness of the channel region being from 8 to 20 xcexcm; a gate electrode above the surface of the channel region with a gate oxide film interposed therebetween; an emitter electrode in common contact with the well region and the emitter region; and a collector electrode on the back surface of the drift layer.
When the thickness of the channel region (channel length) is shorter than 8 xcexcm, the short circuit withstand capability is small. When the channel length is longer than 20 xcexcm, the on-voltage is too high. Therefore, the channel length outside the range between 8 xcexcm and 20 xcexcm is not practical for the trench-type insulated gate transistor.
Other features and advantages of the invention will be come apparent to those of ordinary skill in the art from the following detailed description of the preferred embodiments of the invention and the accompanying drawings.

Insulated gate transistor and the method of manufacturing the same


An integrated circuit (IC) includes a packaging body, multiple interface connectors, a functional chip, and an electrostatic discharge (ESD) protection chip. The interface connectors are located on an outer surface of the packaging body. The functional chip has an electronic functional circuit, and the ESD protection chip has an ESD protection circuit. The ESD protection circuit is connected electrically to an interface connector serving as a data exchange path.

1. Technical Field
The present invention relates to an integrated circuit (IC) having Electrostatic Discharge (ESD) protection circuits.
2. Related Art
During operation of electronic elements, ESD is a main factor causing most of the electronic elements or electronic systems to be damaged due to Electrical Overstress (EOS); in particular, in the case that a process of the electronic elements is more and more precise, and the size thereof is more and more small, the ESD effect easily breaks down the electronic elements and causes a permanent damage to semiconductor elements and computer systems, resulting in relevant electronic products being affected and relevant devices functioning abnormally.
In a procedure of manufacturing, producing, assembling, testing, storing, or transporting the electronic elements or the electronic systems, electrostatic force is accumulated in human bodies, the electronic elements, and various electronic devices or instruments. When the objects with the electrostatic force contact with each other, an ESD discharge path is formed, so that the electronic elements or the electronic devices are unpredictably damaged.
ESD protection circuits are specially used for ESD protection in an IC. The ESD protection circuits provide an electrostatic force discharge path, so as to avoid the electrostatic force flowing into an internal circuit of the IC and causing damage, when ESD occurs.
Generally, the ESD protection circuits are designed beside an input/output (I/O) pad, a power pad, or a ground pad of the IC. However, with the evolution of the process, the price of the process continues to increase. A cost-reduction design still cannot be applied to an area of the pad with the evolution of the process. However, with the continuously reduced size of the elements in the IC, the circuit elements are more sensitive to the damage caused by the ESD. Therefore, an ESD protection hierarchy must be strengthened, and thus the area of the pad necessarily must be enlarged, thereby increasing the whole cost of the IC. In this way, in various design programs of the IC, the ESD-related reliability and cost must necessarily be taken into consideration.


A method of making a seat (10) includes preassembling the seat by positioning a seat cover (26) over a contoured foam substrate (18) with a layer of heat activated adhesive (24) between the seat cover and the foam substrate. Securing the seat preassembly (10') in a fixture (106) and introducing heating fluid into the fixture to pressurize a flexible bladder (156) against the seat. The pressurized bladder urges the seat cover against the contoured foam substrate and heats the adhesive layer. Next, cooling fluid is introduced into the fixture to pressurize the flexible bladder against the seat, and the pressurized bladder urges the seat cover against the contoured foam substrate and cools the adhesive layer.

1. Field of the Invention
The present invention relates generally to seats and to the manufacture of seats, and more particularly, to a method and apparatus for making a seat including a seat cover bonded to a contoured foam substrate.
2. Discussion of the Related Art
Padded seat assemblies, and particularly padded seat assemblies for motorcycles and similar vehicles, are typically constructed using a foam substrate covered by it seat cover. The foam substrate is generally formed by expanding foam within a mold to the contoured shape of the finished seat assembly. The seat cover is secured tightly over the foam substrate so that it generally conforms to the contour of the foam substrate. The seat cover may be a cloth, leather, vinyl or any other similar material. A very stylish and popular seat assembly type is a bucket seat assembly having a concave seating surface. This seat assembly type presents some difficulty in manufacturing to ensure that the seat cover closely matches the concave seating surface.
In the past, buttons, stitching or similar fasteners were passed through the seat cover and the foam substrate to cause the seat cover to more closely conform to the concave contour of the foam substrate. This method of securing the seat cover has a number of disadvantages. For example, the seat cover may be locally weakened where the fastener passes through the seat cover. Also, the holes necessarily formed in the seat cover may allow moisture to seep into the foam substrate and/or moisture in the foam substrate to seep onto the seating surface. Finally, the fasteners may introduce wrinkles into the seat cover that may be aesthetically unappealing.
To provide a smooth surface finish to the seat assembly and to cause the seat cover to closely follow the contour of the foam substrate, it is now known to adhesively bond the seat cover to the foam substrate. Bonding the seat cover to the foam substrate ensures that the seat cover remains in close intimate contact with and conforms nearly identically to the contour of the foam substrate. Also, adhesively bonding the seat cover to the foam substrate advantageously eliminates the need for passing buttons or other fasteners through the seat cover for securing it closely to the foam substrate. This prevents tearing of the seat cover, simplifies the manufacturing process and overall provides a better looking more durable seat assembly.
It is generally known to use a heat source to heat and thus activate a layer of adhesive disposed between the foam substrate and the seat cover to adhesively bond the !;eat cover to the foam substrate. This process allows positioning of the seat cover over the foam substrate before activating the adhesive, and thus, allows accurate positioning of the seat cover before permanently bonding it to the foam substrate. For example, U.S. Pat. No. 5,407,510 discloses a method of making a seat where a foam substrate, clamped against a vacuum table, is urged along with a layer of adhesive and a seat cover against a heated fluidized bed that heats and activates the adhesive. Thereafter, the seat cushion is withdrawn from the fluidized bed. A vacuum may then be used to draw cool air through the seat cushion to cool it. The fluidized bed consists of beads of glass held captive by a flexible and permeable membrane cloth with heated air pumped through the glass beads to urge them upwardly against the membrane. The membrane is compliant so as to conform to the contour of the seat cushion.
In U.S. Pat. No. 5,176,777 a method of making a seat using a fluidized bed similar to that disclosed in the '510 patent is disclosed. Air is introduced into a chamber fluidizing glass beads contained within the chamber. A seat cover is placed on the top of a porous membrane that permits air flow through the membrane but retains the beads within the housing. A foam substrate is urged against the seat cover into the fluidized bed until the membrane of the fluidized bed conforms to the contours of the foam substrate. A heating coil is then activated to heat the air within the fluidized bed to, in turn, heat and activate an adhesive deposited between the seat cover and the foam substrate. No cooling is performed by the fluidized bed, and the process of activating the adhesive is rather slow.
U.S. Pat. No. 5,543,097 discloses a method of making a seat assembly where magnetic particles in the adhesive are inductively excited to generate heat to melt the adhesive. A vacuum is applied to urge the seat cover and adhesive sheet against a contoured cavity of a rigid mold bearing the general contour of the seat cushion desired to be produced. A pre-contoured foam substrate is thereafter placed into the mold against the adhesive layer. An electric current is introduced to a series of coils inside the mold to inductively heat the adhesive while a coolant flows through the coils to keep the foam substrate cool. During operation, a press urges the foam substrate against the adhesive and seat cover. This method may not provide uniform heating of the adhesive and subsequent uniform cooling of the adhesive. Additionally, the process requires rather expensive inductively activated adhesive.
It is also known to use steam as a heat source for heating and activating an adhesive layer between the foam substrate and the seat cover. An example of such a method is disclosed in U.S. Pat. No. 5,372,668 where cannulae or hollow needles pierce the foam substrate to introduce steam into the cushion relatively close to the adhesive between the foam substrate and seat cover. U.S. Pat. Nos. 5,372,667 and 5,286,325 disclose a method of making a seat assembly where the foam substrate is coated with an adhesive, and a press urges the foam substrate, adhesive and seat cover against a mold having holes in it. The holes allow steam to be introduced into the mold and to directly heat the adhesive. Thereafter, the seat assembly is transferred to a cooling mold to cool and set the adhesive. And, U.S. Pat. No. 5,232,543 discloses a method of making a seat assembly utilizing tubes with holes in the tubes to spray steam into the seat cover fabric to heat the adhesive. A vacuum source is turned on after steam has been introduced to evacuate the steam and any water that has condensed in the seat cover fabric. These methods introduce steam directly to the finished product. Steam condensing on the seat cover may damage the material while wetting of the foam substrate may require additional drying steps. Moreover, releasing steam directly into the working environment may potentially pose a worker safety concern.
U.S. Pat. No. 5,486,252 discloses a method of making a seat cushion using a flexible planar electric heating element made of silicone and heating coils that is placed between the cover and foam substrate to heat the adhesive. Thereafter, the heater is removed and pressure is applied to the seat cover and foam substrate to urge them together. Pressurized cooling air is then introduced into a porous fixture of a press that bears against the seat cover fabric to cool and set the adhesive.
While the use of adhesive bonding of the seat cover to the foam substrate has greatly improved seat assembly quality, the use of adhesives, and particularly heat activated adhesives, still pose a number of manufacturing problems. For example, a heat activated adhesive, such as a thermoplastic adhesive, does not gain strength until it is cooled significantly from the heated, activated state. Any movement of the seat assembly during this time can cause the seat cover to separate from the foam substrate resulting in a defective seat assembly. Defective seat assemblies must be rejected and either reworked or scrapped at considerable expense.
Moving the heated seat assembly from a heating fixture to a cooling fixture, in addition to adding to manufacturing complexity and cycle time, introduces an opportunity lo separate the seat cover from the foam substrate before cooling, and thus setting, the adhesive. Heating the adhesive prior to bringing the seat cover into contact with the foam substrate in a cooling fixture presents other problems. For example, it is difficult to uniformly control the temperature of the adhesive either on the surface of the seat cover or on the surface of the foam substrate. Moreover, it is a very difficult task to manipulate the seat cover relative to the foam substrate while the adhesive is tacky, i.e., activated. If the seat cover is not initially perfectly aligned with the foam substrate, subsequent attempts to align the seat cover are difficult and may result in a separation of the seat cover from the foam substrate. Seat assemblies with misaligned seat covers or improperly bonded seat covers are unacceptable.

Method for making a seat using a pressured bladder


A method for removing a water spot from a fabric article, wherein the fabric article has a first side and a second side and the water spot is on the first side. The method comprises the steps of:. a) placing a clean cloth on a hard flat surface;. b) placing the fabric article on the clean cloth such that the first side of the fabric article contacts the clean cloth;. c) dampening the fabric article with an aqueous solution; and. d) ironing the second side of the fabric article adjacent the water spot with a clothes iron.. This method is preferably performed in conjunction with a non-immersion method for cleaning and refreshing fabric articles. Also, a product for treating fabric articles is provided, which product includes instructions for performing the method of removing water spots.

It is well known that certain liquids, for example, coffee, milk and juice products, can stain fabrics. When a liquid contacts a fabric a residue is often deposited on the fibers of the fabric. This residue remains after the liquid evaporates from the fabric causing the stain. Clear liquids, such as water, do not typically deposit a residue on fabrics and thus, do not stain the fabric. But certain fabrics such as rayon, silk, acetate and wool, can be sensitive to clear liquids, which when deposited on these "fine" fabrics can cause a ring, or water spot, to form. Water spots often appear as stains, but in fact the individual fibers of the fabric are not stained, rather they are in a localized deformed state causing the material to appear different than the surrounding fabric.
In some cases, especially where a garment has never been exposed to immersion cleaning either with an aqueous or non-aqueous bath, fugitive, unfixed dyes may migrate during spot stain cleaning. The migration of fugitive dyes can result in a "corona" at the outer rim of the water spot, where fugitive dyes collect as the liquid ring expansion stops. Consequently, removal of this corona of fugitive dyes as well as the water spot itself is necessary to obtain a satisfactory appearance for the garment.
Stains can be removed by washing the residue, or foreign material, from the fibers, but removing water spots from fabrics is difficult. The removal of water spots often requires that the fabric fibers themselves be treated. While it would seem apparent that water spots might simply be removed by immersing the entire garment in an aqueous bath to effect uniformity, this may not be appropriate for garments labeled dry-clean only. Such immersion could, in fact, lead to irreversible adverse affects such as shrinking, stretching, or dye loss. Consequently, a technique which does not employ immersion in an aqueous bath to remove water spots is particularly desirable. Therefore, there exists a continuing need for methods, and products, for treating fabric articles to remove water spots therefrom.

Method for removing water spots from fabrics


A process of contacting at least one isoparaffin and at least one C5 olefin in the presence of a catalyst composition under conversion conditions to provide for converting the at least one isoparaffin and the at least one C5 olefin is provided. The catalyst composition contains a heteropoly acid, zinc, and a support component.

The present invention relates to a process of contacting an isoparaffin and a C5 olefin in the presence of a catalyst composition.
Numerous catalysts have been disclosed in the prior art as suitable for contacting isoparaffins and olefins containing from about 4 to about 7 carbon atoms per molecule to provide for various converting of such hydrocarbons, particularly to form hydrocarbon products having from about 6 to about 9 carbon atoms per molecule. Hydrocarbons having from about 6 to about 9 carbon atoms have various significant uses, such as increasing the octane of gasoline, improving the distillation index of gasoline, and to provide various oligomeric products that are valuable in either the petrochemical field, the fuel industry, or combinations thereof. However, there is a significant and continuing need to provide catalyst compositions that are useful in increasing the number of hydrocarbons having from about 6 to about 9 carbon atoms per molecule produced from the contacting of isoparaffins and olefins having from about 4 to about 7 carbon atoms per molecule.
Numerous catalysts and processes have also been disclosed in the prior art for isomerizing olefins, such as 1-pentene to 2-pentene. The isomer products can be utilized as additional feed stocks for alkylation units, various chemical processes, and the like. However, there is a significant and continuing need to provide catalyst compositions that are effective in providing for an increase in the yield of isomer products produced from isomerizing olefins.
It is also known in the art that a catalyst composition containing platinum can be utilized for various hydrocarbon reactions and conversions, such as isomerizing, oligomerizing, disproportionating, cleaving, and the like and combinations thereof. However, there is a significant expense associated with the use of platinum on such catalysts. Thus, catalyst compositions that do not utilize platinum, but which can provide for hydrocarbon production and regenerability similar to platinum-containing catalyst compositions would be of significant contribution to the art and the economy.
It is also known in the art that the use of supported platinum catalyst compositions (such as platinum on alumina) for various hydrocarbon conversion reactions, such as isomerizing hydrocarbons, encounter significant problems with the rapid deactivation of such catalyst compositions. There are believed to be a number of causes of such catalyst deactivation. One such cause of catalyst deactivation is the formation and accumulation of high molecular weight hydrocarbons, such as C5 to C16 hydrocarbons, carbon, and/or coke, within the pores of such catalyst compositions, particularly at the reaction sites, also referred to as acid sites, within such catalyst compositions as well as on the surface of such compositions. The formation and accumulation of such high molecular weight hydrocarbons causes a high rate of catalyst deactivation, a short run life of the catalyst, and an unsteady yield of hydrocarbon products. Hydrocarbon conversion reactions and processes that counteract such deactivation would also be of significant contribution to the art and the economy.

Catalyst composition comprising a heteropoly acid, zinc, and a support component and processes therefor and therewith


An image processing method involves processing image data indicative of an image represented with a prescribed number of input tones by each of pixel groups composed of a plurality of print pixels, and generating dot data representing a status of dot formation on each of the print pixels to be formed on a print medium. The method includes preparing a first conversion table and a second conversion table, determining the pixel group tone value in response to the input tone value corresponding to the pixel group, converting the determined pixel group tone value into the code values for each of the pixel groups, by referring to the first conversion table, decoding the acquired code value into the output dot arrangement for each of the pixel groups, by referring the second conversion table, and outputting the dot data in response to the output dot arrangement.

1. Technical Field
The present invention relates to a technique of forming dots on a printing medium to print an image.
2. Related Art
As output devices for images created using a computer or images shot using a digital camera or the like, printing devices that print images by forming dots on a printing medium are widely used. In these types of printing devices, new technique of performing specific halftone process by multiple pixels as a process unit was introduced by the inventor of the present invention, and the new technique enables high speed data transfer and high speed processing keeping the picture quality, as disclosed in JP-A-2005-236768 and JP-A-2005-269527.
The inventor focused the other possibilities of the specific halftone process because the process has completely different structure from the conventional halftone process. The inventor discovered that the new technique can provide the design freedom of implementing additional function for which the conventional halftone process can not provide. However, the inventor anticipated the introduction of the additional function causes the additional process load for the halftone process.

This patent is subject to a terminal disclaimer.


A process for inserting cores into a casting mold includes inserting a plurality of individual cores into a template; forming a core group by joining together the plurality of individual cores within the template using a bracing and securing device which is detachable; dipping the core group into a founder's black bath to provide a coated core group; drying the coated core group; inserting the core group after drying into the casting mold; and removing the bracing and securing device. The process advantageously additionally includes providing a plurality of core groups that form a core assembly for a casting mold; forming a core set by joining together the plurality of core groups using a bracing and securing device; dipping the core set into a founder's black bath to provide a coated core set; drying the coated core set; inserting the core set after drying into the casting mold; and removing the bracing and securing device. The plurality of cores have respective contact surfaces that touch each other, and the process advantageously includes providing an adhesive on at least some of the contact surfaces prior to inserting the plurality of cores into the template.

Until now it was standard in foundry practice, in particular in the gray iron practice, to insert cores manually into one of the form boxes of the casting mold, comprised of at least two form boxes, which are designed for the production of thin-walled castings, e.g. motor blocks. In particular for the production of motor blocks made of gray iron, increasingly higher requirements must be met with respect to complexity of the motor block, weight savings, accuracy of measurements and surface quality. With respect to core production, this makes it necessary to produce cores with the highest possible filigree and with a very complex geometry, thereby reducing the subsequent processing of the motor blocks to a minimum. It has proven useful in this case to design the respective motor block such that bores, openings or the like, which so far had to be added in a subsequent processing step, are added from the start during the casting process. Owing to this, neighboring cores must have corresponding projections, which "hold open" these openings in the casting mold. However, it has turned out in this connection that burrs develop at the produced openings as a result of unavoidable wear and tear and as a result of deviations in the accuracy that are also unavoidable, especially in this area of contact between neighboring cores. These burrs must subsequently be reworked following the removal of the casting from the mold. It is the object of the invention to create a process that simplifies the insertion of the cores into such a casting mold and avoids a costly subsequent reworking.

Process for introducing cores into a casting mold


A method for producing highly pure enamines, which comprises reacting an aldehyde or ketone with an amine and treating the resulting reaction mixture with an acidic aqueous solution at a temperature between 0° C. and 30° C.

Enamine is a general term for αβ-unsaturated amines, which are extremely useful compounds in the field of synthetic organic chemistry. Enamines are generally synthesized by a dehydrative condensation reaction between an aldehyde or ketone and a secondary amine. In the synthesis of enamines, the dehydrative condensation reaction has been well known to proceed more smoothly when one equivalent of an aldehyde or ketone is reacted with more than one equivalent of a secondary amine than when one equivalent of an aldehyde or ketone is reacted with one equivalent of a secondary amine. Accordingly, when the excess amount of the secondary amine is used in said synthetic reaction, the desired product, the enamine, and the secondary amine are included in the final product obtained after the reaction is completed. Enamines thus obtained can be used for other reactions without any purifications, but in some reactions, for example, such as a condensation reaction between an enamine and a halogenated alkyl compound, purification of the enamine is necessary because the secondary amine inhibits the reaction. As a procedure for the purification of enamines, fractional distillation is generally known, but especially in the production of a large amount of enamine, large scale fractional distillation equipment is required, and additionally, this purification procedure is generally accompanied by disadvantages such as the decomposition of the enamines in the course of the fractional distillation at a high temperature. Furthermore, it is known that enamines generally have poor stability against water [Barton S. D.; Ollis W. D. Comprehensive Organic Chemistry; Sutherland I. O. Ed.; Pergamon: New York, 1979; Vol. 2, Part 6], and studies on the rate (mechanism) of hydrolysis of various enamines have been reported [J. Org. Chem., 32, 1111 (1967); J. Org. Chem., vol. 40, No. 5, 607-614 (1975); J. Am. Chem. Soc., 82, 4261-4270 (1970), etc.].

Process for production of high-purity enamines