The present invention provides a method of manufacturing a semiconductor device and a semiconductor device that allow use of interlayer and interconnect insulating films having a low dielectric constant in forming a dual damascene structure. A first insulating film, a second insulating film, a first-mask forming layer, a second-mask forming layer, a third-mask forming layer, and a fourth-mask forming layer are sequentially deposited over a substrate. The fourth-mask forming layer is patterned to form a fourth mask having an interconnect trench pattern. After a resist mask is formed on the fourth mask, the layers to the second insulating film are etched to open via holes. The third-mask forming layer is etched through the fourth mask to thereby form a third mask having the interconnect trench pattern and to extend the via holes downward partway across the first insulating film. The second-mask forming layer is etched through the fourth mask to thereby form a second mask having the interconnect trench pattern, and the first insulating film that remains under the bottoms of the via holes is removed. Subsequently, the second insulating film is etched through the second mask to thereby form an interconnect trench, and then the second mask is removed.

The present invention relates to a method of manufacturing a semiconductor device and a semiconductor device, and particularly to a method of manufacturing a semiconductor device having a multilevel interconnect structure based on a dual damascene structure that has a structural shape suitable for adoption of low dielectric constant (low-k) films as interlayer insulating films and insulating films among interconnects (interconnect insulating films), and the semiconductor device.
In step with size miniaturization and increase of integration degree of semiconductor devices, delays of electrical signals attributed to the time constant of interconnects are increasingly becoming a serious problem. Accordingly, for conductive layers in a multilevel interconnect structure, use of copper (Cu) interconnects, which have a low resistivity, has been advanced instead of aluminum (Al) alloy interconnects. The Cu, however, is difficult to pattern by dry etching unlike metal materials such as Al used in conventional multilevel interconnect structures. Therefore, typically multilevel Cu interconnect structures employ a damascene method, in which interconnect trenches are formed in insulating films, and then Cu films are buried in the interconnect trenches. In particular, a dual damascene method is attracting attention. In this method, after formation of via holes and interconnect trenches, Cu is buried in the holes and trenches simultaneously. The dual damascene method therefore is advantageous for reducing the number of steps. For example, Japanese Patent Laid-open No. Hei 11-45887 discloses this method.
In addition, in high-integration semiconductor devices, an increase of interconnect capacitance causes lowering of operation speed of the semiconductor devices. Therefore, It is essential to the semiconductor devices to employ minute multilevel interconnects for which low-k materials are used as interlayer and interconnect insulating films to suppress the increase of interconnect capacitance. Currently used as the low-k materials are substances having a dielectric constant of about 2.7, such as organic polymers typified by polyarylether (PAE) and inorganic materials typified by hydrogen silsesquioxane (HSQ) and methyl silsesquioxane (MSQ). In addition to these materials, in recent years, adoption of low-k materials having a dielectric constant of about 2.2 obtained by making the above-described materials porous is being promoted.
When the dual damascene method is applied to interlayer and interconnect insulating films including low-k material films, it is required to address the following technical restrictions.
The first restriction is that the compositions of the low-k material films are close to the composition of resist used for patterning, and therefore the low-k material films are readily damaged in a resist removal process. Specifically, it is essential that damage to the low-k material films can be suppressed in resist removal treatment after etching with use of a resist mask, and in resist reproduction treatment when a treated resist mask does not satisfy the product standard.
The second restriction is that the manufacturing process needs to have applicability to fabrication of a borderless structure, in which there is no alignment margin between interconnects and via holes. In step with miniaturization of semiconductor devices, employment of a manufacturing process compatible with a borderless structure becomes a major premise of achievement of multilevel interconnects after the 0.18 μm generation. Therefore, also in simultaneous formation, in a dual damascene method, of interconnect trenches and via holes in interlayer and interconnect insulating films including low-k materials, it is important to employ a process involving less variation in the via resistance due to misalignment.
The third restriction is that adoption of a layer with a comparatively high dielectric constant leads to an increase of interconnect capacitance. Specifically, in order to form interconnect trenches with adequately controlling the depth thereof, it is desirable to provide, near the bottoms of the interconnect trenches, a layer that has a large etching selection ratio with respect to interlayer and interconnect insulating films. However, when a layer with a comparatively high dielectric constant is used for that purpose, an increase of interconnect capacitance is caused. Therefore, there has been a need for a dual damascene process for an interlayer and interconnect insulating structure employing low-k materials, allowing control of formation of interconnect trenches combined with suppression of a capacitance increase.
As a dual damascene method that can address the above-described technical restrictions, a method has been proposed that will be described below with reference to FIGS. 7A to 7H, which are sectional views of manufacturing steps. For example, Japanese Patent Laid-open No. 2004-63859 discloses this method.
Referring initially to FIG. 7A, on a base insulating film 2 deposited on a silicon substrate 1, a multilayer film formed of a polyarylether (PAE) film 3 and a silicon dioxide film (SiO2) 4 are deposited as an interconnect insulating film. Subsequently, buried interconnects (Cu interconnects) 7 formed of a copper (Cu) film are formed in interconnect trenches 5 provided in the interconnect insulating film with the intermediary of a barrier film 6 therebetween. An etching stopper film 8 composed of silicon carbide (SiC) is then formed on the Cu interconnects 7 and the SiO2 film 4. This etching stopper film 8 also functions as a diffusion barrier film and an antioxidation film for the Cu.
Deposited on the etching stopper film 8 are a first insulating film 9 composed of MSQ, i.e., a carbon-doped silicon oxide film (SiOC film), and a second insulating film 10 composed of PAE as an organic insulating film. The formation of the films 9 and 10 is followed by sequential deposition of a first-mask forming layer 11 composed of SiO2, a second-mask forming layer 12 composed of silicon nitride (SiN), and a third-mask forming layer 13 composed of SiO2. Furthermore, a resist mask 14 having an interconnect trench pattern is formed on the third-mask forming layer 13.
Referring next to FIG. 7B, the third-mask forming layer (SiO2) 13 (see FIG. 7A) is etched by dry etching that employs the resist mask 14 (see FIG. 7A) as the etching mask, to thereby form a third mask 13′ having the interconnect trench pattern, which is then followed by ashing removal of the resist mask 14.
Referring next to FIG. 7C, a resist mask 15 having a via hole pattern is formed on the second-mask forming layer 12 and the third mask 13′. The resist mask 15 is formed so that at least part of apertures of the resist mask 15 overlaps with apertures of the interconnect trench pattern formed in the third mask 13′.
Subsequently, as shown in FIG. 7D, the third mask (SiO2) 13′, the second-mask forming layer (SiN) 12 and the first-mask forming layer (SiO2) 11 are etched by dry etching that employs the resist mask 15 (see FIG. 7C) as the etching mask. In addition, the second insulating film (PAE) 10 is also perforated, which forms via holes 16 exposing the surface of the first insulating film (SiOC) 9. The resist mask 15 is removed in the etching of the second insulating film (PAE) 10, which is an organic material. Even when the resist mask 15 is completely removed during the perforation of the second insulating film 10, the formation of the via holes 16 having a favorable aperture shape are allowed due to the second-mask forming layer (SiN) 12 (see FIG. 7C) serving as the mask, since the second-mask forming layer 12 has the pattern of the via holes 16.
Referring next to FIG. 7E, by dry etching with use of the third mask (SiO2) 13′ having the interconnect trench pattern as the etching mask, the second-mask forming layer (SiN) 12 (see FIG. 7D) having the via hole pattern is etched to thereby form a second mask 12′ having the interconnect trench pattern, and the first insulating film 9 is etched to an intermediate thickness thereof so that the via holes 16 are extended downward.
Referring next to FIG. 7F, by using the third mask (SiO2) 13′ (see FIG. 7E) and the second mask (SiN) 12′ that have the interconnect trench pattern, part of the first-mask forming layer (SiO2) 11 remaining in the interconnect trench region (see FIG. 7E) is removed to thereby form the first mask 11′ having the interconnect trench pattern. In this removal, the first insulating film (SiOC) 9 remaining under the bottoms of the via holes 16 is etched, so that the via holes 16 expose the etching stopper film 8. The third mask 13′ is removed in this etching step.
Subsequently, as shown in FIG. 7G, the etching stopper film 8 exposed through the bottoms of the via holes 16 is etched so that the via holes 16 are extended downward to reach the Cu interconnects 7, and the second mask 12′ (see FIG. 7F) is removed. Thereafter, the second insulating film (PAE) 10 remaining under the bottom of the interconnect trench pattern is etched with use of the first mask (SiO2) 11′ having the interconnect trench pattern as the etching mask. Thus, the interconnect trench pattern provided in the first mask 11′ is extended downward, which results in the formation of interconnect trenches 17 in the first mask 11′ and the second insulating film 10. Accordingly, the state is obtained in which the interconnect trenches 17 communicate with the lower Cu interconnects 7 by the via holes 16.
After the above-described steps, by posttreatment employing chemicals and RF-sputtering treatment, etching fouling that remains on sidewalls of the interconnect trenches 17 and the via holes 16 are removed, and modified layers in the surfaces of the Cu interconnects 7 at the bottoms of the via holes 16 are normalized.
Referring next to FIG. 7H, a barrier metal film 18 composed of tantalum (Ta) is deposited by sputtering in a manner of covering the inside walls of the interconnect trenches 17 and the via holes 16. Subsequently, a conductive film (not shown) composed of Cu is deposited on the barrier metal film 18 by electrolytic plating or sputtering in a manner of filling the interconnect trenches 17 and the via holes 16. Thereafter, by using chemical mechanical polishing (CMP), extra part of the conductive film and the barrier metal film 18 unnecessary for the interconnect pattern is removed, and upper part of the first mask 11′ is also removed. Thus, vias 19 composed of Cu are formed in the via holes 16 while Cu interconnects 20 are formed in the interconnect trenches 17, which allows achievement of a dual damascene multilevel interconnect structure. Moreover, an etching stopper film 21 composed of e.g. SiC is formed on the Cu interconnects 20 and the first mask 11′, similarly to the etching stopper film 8 on the lower Cu interconnects 7.
Use of this dual damascene method employing three layers of etching masks eliminates the above-described technical restrictions regarding a low-k material structure, and allows a manufacturing method in which a load associated with resist patterning steps is light.
Specifically, as shown in FIGS. 7A and 7C, reproduction treatment of the resist masks 14 and 15 that are incompatible with the product standard can be implemented on the third-mask forming layer (SiO2) 13 and the second-mask forming layer (SiN) 12. In addition, as described with reference to FIG. 7D, the removal of the resist mask 15 for opening the via holes 16 can be carried out simultaneously with the step of etching the second insulating film (PAE) 10 to extend the via holes 16. Therefore, resist removal can be implemented while suppressing damage to low-k material films.
Furthermore, as shown in FIG. 7C, the via holes 16 are formed through the third mask 13′ having the interconnect trench pattern. Therefore, when the resist mask 15 having the via hole pattern is formed, the height of steps in the underlayer thereof is as large as only the thickness of the third mask 13′. Therefore, defocusing in exposure is suppressed, which can form a resist mask having a highly accurate via hole pattern. Moreover, as shown in FIG. 7D, since the via holes 16 are formed through the third mask 13′ having the interconnect trench pattern, no variation in the size of the via holes 16 arises even if misalignment between the interconnect trenches 17 and the via holes 16 is caused.
In addition, as described with reference to FIG. 7G, when the second insulating film (PAE) 10 is etched to form the interconnect trenches 17, the etching of the second insulating film 10 is carried out on the first insulating film (SiOC) 9. Thus, a high etching selection ratio can easily be ensured. Therefore, the depth of the interconnect trenches 17 can easily be controlled without providing an etching stopper film composed of a high dielectric constant material such as an SiN film.
However, in the above-described dual damascene method, the first mask 11′, which remains among interconnects even after completion of the device, is formed of an SiO2 film. Therefore, the SiO2 film, which has a dielectric constant of about 4, remains among the interconnects. Accordingly, even if an organic insulating film such as PAE is used as a lower interconnect insulating film to reduce the dielectric constant to some extent, it is difficult to reduce the effective dielectric constant among the interconnects. Thus, it is also difficult to reduce the interconnect capacitance.
If in the above-described technique, an SiOC film (k=3.0) is used in order to reduce the interconnect capacitance instead of the SiO2 film 4 (k=4.1) serving as the insulating film among the lower Cu interconnects 7 and instead of the SiO2 film (k=4.1) of the first-mask forming layer 11 (see FIG. 7A) serving as the insulating film among the upper Cu interconnects 20, the following problem arises.
The problem will be described with reference to FIG. 8A to FIG. 9. As shown in FIG. 8A, also when an SiOC film is used for the layers 4 and 11, the manufacturing process employs the same steps as those described with FIGS. 7A to 7E, i.e., until the step in which the second mask 12′ is formed and the via holes 16 are extended downward partway across the first insulating film 9 with use of the third mask 13′ as the etching mask. The first-mask forming layer 11 is formed to have a large thickness that includes both the thickness for interconnects and the thickness of sacrificial part to be removed in a CMP step to be carried out later.
Referring next to FIG. 8B, the first-mask forming layer (SiOC) 11 (see FIG. 8A) is etched to thereby form a first mask 11′ having an interconnect trench pattern. In this step, the first insulating film (SiOC) 9 is also etched with the second insulating film (PAE) 10 with the via hole pattern serving as the mask, and therefore the via holes 16 are further extended downward so that the etching stopper film (SiC) 8 is exposed. In this etching, the etching selection ratio of SiOC to SiC (SiOC/SiC) is about 3. Since the first-mask forming layer (SiOC) 11 has a large thickness, the etching stopper film 8 is removed and thus the lower Cu interconnects 7 are exposed. Accordingly, the surfaces of the Cu interconnects 7 are susceptible to damage. In addition, in the region in which misalignment between the Cu interconnect 7 and the via hole 16 is caused, a hole A that reaches the PAE film 3 is formed in the SiOC film 4.
In the step of forming the first mask 11′, dry etching is carried out by using the third mask (SiO2) 13′ (see FIG. 8A) having the interconnect trench pattern and the second mask (SiN) 12′ as the etching mask. However, apertures of the interconnect trench pattern formed in the first-mask forming layer (SiOC) 11 become wider than the intended size. This is because the etching selection ratio of the first-mask forming layer 11 to the third and second masks 13′ and 12′ serving as the etching mask is not sufficiently high, and the first-mask forming layer 11 has a large thickness. Therefore, the thicknesses of the third and second masks 13′ and 12′ are insufficient to adequately etch the first-mask forming layer 11.
Referring next to FIG. 8C, under the above-described state, the second insulating film (PAE) 10 is etched by etching that employs the first mask 11′ as the etching mask. Thus, the interconnect trench pattern provided in the first mask 11′ is extended downward, which results in the formation of interconnect trenches 17 in the first mask 11′ and the second insulating film 10. Subsequently, the barrier metal film 18 is deposited to cover the inside walls of the interconnect trenches 17 and the via holes 16, and then the conductive film 22 is formed on the barrier metal film 18 in a manner of filling the interconnect trenches 17 and the via holes 16.
Referring next to FIG. 9, by using CMP, extra part of the conductive film 22 (see FIG. 8C) and the barrier metal film 18 unnecessary as the interconnect pattern is removed, and upper part of the first mask 11′ is also removed. Thus, vias 19 are formed in the via holes 16 while Cu interconnects 20 are formed in the interconnect trenches 17. Subsequently, an etching stopper film 21 is formed on the Cu interconnects 20 and the first mask 11′.
In the above-described manufacturing method, a void B is generated in the vias 19 and the interconnects 20 due to burying defects attributed to the hole A described with reference to FIG. 8B. Consequently, electromigration and stress migration due to the void B arise in the use environment of the semiconductor device, which deteriorates the interconnect reliability. In addition, if a hole A′ arising from widening of the hole A is generated in the SiOC film 4 and the PAE film 3 due to the subsequent etching, defects of voltage-withstanding characteristic of the interconnect insulating film arises. As one approach for overcoming this problem, increasing the thickness of the first insulating film 9 in order to prevent the generation of the hole A is also possible. However, this thickness increase leads to a higher embodiment ratio of the via holes 16 formed in the first insulating film 9. Such a high aspect ratio probably leads to insufficient burying of the conductive film 22 (see FIG. 8C) into the via holes 16, which results in conduction defects.
Furthermore, since apertures of interconnect trench pattern of the first mask 11′ are larger than the predetermined size, the widths of the interconnect trenches 17 are also larger than the predetermined size. Therefore, a sufficient voltage-withstanding characteristic between adjacent interconnects cannot be ensured, which lowers the yield of the semiconductor device. If in order to overcome this problem, the third mask 13′ (see FIG. 8A) is formed to have a large thickness and then the first-mask forming layer 11 is etched with use of the third mask 13′, the interconnect trench pattern with its size error being suppressed can be formed. However, since the via holes are extended downward in this etching with the second insulating film 10 having the via hole pattern serving as the mask, the first insulating film 9 and the etching stopper film 8 are etched, which exposes the surfaces of the Cu interconnects 7. In addition, the SiOC film 4, which is the lower layer, is also etched.
Against the above-described background, there is a need for the following manufacturing method of a semiconductor device and a semiconductor device obtained through the method. Specifically, by the method, the whole interlayer and interconnect insulating films are allowed to keep a low dielectric constant. In addition, in steps of forming interconnect trenches and via holes in the insulating films, the interconnect trenches can be formed with favorable processing controllability, without the occurrence of exposure of lower interconnects and etching of lower interconnect insulating films.

Method of manufacturing semiconductor device and semiconductor device


A device for supporting a substrate, an apparatus for manufacturing a display panel, and a method for supporting a substrate are provided. The device for supporting a substrate comprises: a bearing mechanism being provided with a through hole for bearing a substrate; one or more sticky pads on the bearing mechanism surrounding the through hole, which are used for fixing the substrate on the bearing mechanism; and an elevating mechanism, which controls lifting and lowering of the substrate by passing through the through hole, wherein a top of the lifting mechanism is provided with a light-emitting member that emits light when in contact with the substrate, to illuminate the one or more sticky pads such that stickiness of the sticky pads is reduced from a first stickiness to a second stickiness.

The organic light-emitting diode display is considered to be a new-generation display technology, and has a series of excellent characteristics such as self-light emission, high contrast, small thickness, low energy consumption, and the like. An organic functional layer in an organic light-emitting diode device is mainly produced by a vacuum thermal evaporation method. An evaporation material is stored in a crucible in an evaporation source, and the evaporation material is allowed to sublimate by heating the crucible with a heater. In this way, an organic vapor is ejected from an ejecting mechanism and deposited on a surface of the substrate, which is to be coated, to form a uniform organic thin film on the surface of the substrate.

Device for supporting substrate, apparatus for manufacturing display panel, and method for supporting substrate

HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.


A method of customizing a vehicle component control system of a vehicle including creating with a controller a user profile comprising at least one performance characteristic. The user profile is stored in a memory device. At least one vehicle control characteristic of the vehicle component control system is adapted based on the at least one performance characteristic of the user profile.

1. Field of the Invention
The present invention generally relates to a method of customizing a vehicle component control system of a vehicle. More specifically, the present invention relates to a method of customizing a vehicle component control system of a vehicle including creating a performance characteristic and adapting a vehicle control characteristic of the vehicle component control system based on the performance characteristic.
2. Background Information
Vehicle drivers have a wide range of physical characteristics, capabilities, preferences and other attributes that affect how each individual driver operates a vehicle. Vehicles are typically designed for a wide range of users but are generally not able to accommodate the particular needs and/or preferences of such a wide range of drivers. Vehicles have recently included means of customizing performance characteristics, such as steering and handling characteristics, through selection of predetermined, fixed settings provided by the manufacturer. For example, some vehicles have fixed modes, such as normal, sport, eco (economical) or snow, that adjust a performance characteristic of the vehicle to correspond to the selected mode. However, the parameters associated with each mode are fixed and cannot be customized to suit the specific needs, requirements and/or preferences of each individual driver. Accordingly, a need exists for a method and system of adjusting a performance characteristic of a vehicle control system to correspond to a user profile associated with each individual driver.

Method of customizing vehicle control system


A process and apparatus are provided for breaking the glass components of articles comprised of glass and nonglass components and liberating the glass components from the nonglass components by subjecting the articles to controlled vibrations sufficient to break the glass without breaking the nonglass components. The apparatus is a vibratory device having a screen deck and a plate deck. The screen deck has holes through which the broken glass falls to the plate deck. The nonglass components remain on the screen deck. Thereafter, the nonglass components are removed by one or more of a variety of means. The glass may be further processed by cleaning, rinsing and further crushing to size the glass pieces. Glass of different types may optionally be separated by taking advantage of the differences in specific gravities between glass types.

Description of the Invention Background
In 1990, an estimated 18-20 million television sets were sold in the United States. A single television manufacturing facility may produce from 7,000 to about 15,000 television picture tubes per day. Of these, between about five to seven percent are rejected due to some defect rendering them unsuitable for sale. Thus, at a single manufacturing facility, hundreds of TV tubes are discarded each day amounting to several hundred tons of TV tube waste each month. The traditional means of disposing of the waste has been to put it in land fills.
A television tube typically contains glass components and nonglass components. The glass components include a front panel, which is up to two inches thick in places, and a conical funnel section. The nonglass components include paper, plastics, ceramics and metals in the form of the electronic gun, clips, masks, straps and a lead frit used to join the panel glass to the funnel glass. A graphite acrylic coating typically is applied to the external surfaces of the panel glass and the funnel glass. The internal surface of the panel glass is also coated with, for example, aluminum, phosphor and graphite. The internal surface of the funnel glass may be coated with graphite, iron oxide and sodium silicate.
Because the glass TV tubes exhibit toxic waste characteristics due to leaching of lead from the frit and funnel, they are disposed of as a hazardous waste. Simply burying the TV tubes is no longer permissible. Transport of the waste to approved toxic land fills is costly.
Heretofore, there has been no effective means of recycling the waste TV tubes or other articles made of glass and nonglass components. The structural mixture of glass and nonglass components and the inorganic and organic coatings on the glass in TV tubes makes them unacceptable for recycling by conventional glass or metal recycling methods. In addition, the ceramic components in the TV tubes would poison the glass for most further uses if the glass and ceramics are mixed. Avoiding such a mixture was heretofore very difficult. Crushing the discarded TV tubes by conventional means only inextricably mixes the glass and nonglass components. The safe disposal and/or recycling of TV tubes and similar mixed glass and nonglass articles has become a problem.
There is a need for a process for separating the glass and nonglass components of a TV tube or similarly structured article. There is a further need for a process for sizing and cleaning the separated glass for recycling. Finally, there is a need for a process for separating different types of glass, such as the panel glass from the funnel glass, in an economic and easy to use process.


A steam sterilizer device having a steam generation system is disclosed. The steam generation system has a fluid connection to a water source (1) to provide water to a venturi apparatus (27) for the selective creation of a vacuum in a sterilization chamber (71). A fluid connection to a particle filter (33) and a reverse osmosis filter (37) is also provided and water passed through the filters is delivered by a metering pump (53) to a steam generating apparatus (59) which in turn supplies steam to a the chamber (71). The chamber (71) is provided with a discharge conduit including a mixing chamber (31) and a split tubing air break (131).

The present invention relates generally to the decontamination art. It finds particular application in the sterilizing and disinfecting apparatus typically employed to clean, sterilize and disinfect medical, veterinary, mortuary, and laboratory instruments and equipment and will be described with particular reference thereto. More particularly, the present invention finds application in a steam sterilization apparatus which requires its own source of steam. It will be appreciated, however, that the invention may be applicable to a wide variety of apparatus used in sanitizing and disinfecting.
Medical, dental, surgical, veterinary, and laboratory equipment and instruments are often sterilized by exposure to steam or steam in combination with other vapors. Typically, an apparatus is provided which isolates the equipment and instruments in a high pressure, high temperature steam environment for a sufficient period of time to complete cleaning and/or sterilization. For example, the steam autoclave devices of the type described in U.S. Pat. Nos. 4,193,818; 4,226,642; and 4,601,300, herein incorporated by reference, demonstrate steam autoclaves of the type generally related to the present invention.
In most steam sterilizer applications, the apparatus is utilized in an institutional setting wherein "house" steam is available from the physical facilities of the building in which it is located. In certain instances, however, it is desirable to have a sterilizer containing its own system for generation of steam. For example, in smaller medical or laboratory facilities and in most lesser developed regions of the world, house steam is not available. In fact, in instances where house steam is temporarily unavailable, it may even be desirable to have a steam sterilization device that provides steam source via a self-contained steam generation system.
Historically, in self-generating steam sterilizers, a small boiler has been provided within the sterilization unit or as a separate stand alone device to provide steam. Typically, these boilers have been an immersion heat system wherein a heating element is immersed in a large water containing reservoir.
The inventive steam delivery system is envisioned as suited to be used in combination with a boiler type steam generator of the type described in U.S. Pat. No. 4,767,502, herein incorporated by reference. Nonetheless, while the present inventive steam delivery system can be used in conjunction with a traditional stand alone boiler, a preferred embodiment of the invention is to combine the present inventive steam delivery system with a flash steam generator of the type described in U.S. Ser. No. 08/485,736 filed Jun. 7, 1995, herein incorporated by reference.
In an attempt to provide a self-contained steam generation system for a sterilization device, a variety of important requirements must be accomplished. More specifically, the system must be suited to handling of the variety of contaminants and mineral contents found in tap water throughout the United States, and in fact, throughout the world. Similarly, a variety of governmental regulations exist concerning, for example, water temperatures, discharge piping arrangements, and other safety constraints. To accomplish this goal, sterilization units having a self-contained system for steam generation have been highly complicated and expensive. The present invention provides an inventive and significant improvement over the units previously in existence.

Steam delivery system for a decontamination apparatus


The subject invention provides a bowl having recessed acquisition features that permit the bowl to be manipulated by humans without providing protrusions that could be grasped by an animal, through biting or otherwise. In one embodiment, the recessed acquisition feature is formed by two spaced apart slots recessed in the exterior wall of the bowl. Each slot is characterized by a first wall oriented to face the opposing slot and a second wall oriented to face the interior cavity, each wall being substantially vertical or negatively sloped to provide a lifting surface. The thumb and a finger are placed in these slots against gripping surfaces and squeezed towards one another. The bowl may also be raised by grasping the interior wall of the cavity and the substantially vertical or negatively sloped second wall of a slot between the thumb and fingers. In another embodiment, a recessed slot is shaped to have the natural curve of a human finger. The portion of the slot wall oriented to face the interior cavity is preferably substantially vertical or negatively sloped. The curved shape of the slot permits one to apply a lifting force on the bowl. In other embodiments, the acquisition feature is an inwardly sloping, vertical slot recessed at the base edge of the bowl. The inwardly sloping portion of the slot may consist of a tab or a portion of the exterior wall of the bowl. Again, a thumb or finger disposed in the recessed slot can be used to apply a lifting force to the bowl while a stabilizing force is exerted on the bowl's rim.

1. Field of the Invention
This invention relates to bowls, and more specifically to animal feeding bowls that are disposed for easy human manipulation while thwarting an animals ability to overturn or otherwise seize the bowls.
2. Description of the Prior Art
Bowls have existed for a long time and serve many different functions. Generally, the types of bowls within the scope of this invention include feeding and watering bowls for animals, such as dogs, cats, and farm animals.
There are many types of dog and cat bowls in the prior art. Most are molded hard plastic formed to define a cavity having a generally square or circular shape when viewed from above. Some prior art bowls have two cavities to contain both food and water for the animal. Typically the bowls are integrally formed wherein an inner wall defining the cavity is contiguous with a rim at the top of the cavity and the rim is contiguous with an exterior wall that terminates in a base edge that rests on the ground. In any event, the sides of the bowls, both around the inner cavity and the outer perimeter, are smooth and outwardly sloping from the rim to prevent the bowls from being grasped by an animals teeth. In other words, the sloped or flared smooth sides of the bowl hinder an animal from manipulating the bowl, i.e., overturning, picking up, etc., by biting down over the rim of the bowl.
It is generally most desirable to utilize hard plastic or a similarly hard material to prevent animals from biting or otherwise gripping the bowls. Alternative embodiments of prior art bowls are formed of stainless steel to prevent corrosion. Prior art bowls may also be fabricated of heavy clay for decorative purposes. Due to the added weight of the clay, such bowls are generally less susceptible to overturning, but more difficult for humans to manipulate.
Typically, prior art bowls can be grasped for manipulation by humans in several different ways. On the rim of a bowl, one can apply downward pressure with a thumb while using one of the other fingers to grasp the base edge of the bowl. Generally, this method is most effective when one's finger nails are long enough to slide between the base edge of the bowl and the ground so that the fingernails can be used in a lifting movement. A drawback to this method of manipulation is that one is apt to get miscellaneous debris, such as animal food or dirt, under one's fingernails. Another method for manipulating bowls is to use the thumb and at least one other finger in a pinching action, wherein one appendage is placed against the inner wall of the cavity and the other appendage is placed against the exterior wall of the bowl. A drawback to this method is that one is forced to place at least one appendage against the inside wall, where there is likely to be food, water, or some other viscous material adhering to the bowl. Not only is this undesirable from a sanitary standpoint, but this debris is likely to reduce the friction between the bowl and the finger's such that the bowl may be dropped.
One common feature of many prior art bowls is a raised lip around the outer perimeter of the bowl. This lip aids in grasping and manipulating the bowl by providing a protrusion around which a person can get one's finger or thumb. A drawback to such a feature is that it also serves as a protrusion around which an animal can easily maneuver a tooth or paw, permitting the animal to grasp or overturn the bowl. Similar protrusions, such as handles and the like, are also characterized by this same drawback. In addition, such features protruding generally from the bowl require additional space for deployment of the bowl.

Animal bowl with recessed acquisition feature


A geographically specific signal communication receiver in a television receiver that selects one or more messages or warnings that are of interest for display by the television screen from a group that includes other messages or warnings that are not of interest. Each message or warning has an associated code that is compared with one or more codes stored in the receiver and when there is a match between the received code and the stored code, the received message or warning associated with the matched received code is passed to a video display for presentation.

Several warning methods for alerting populations to weather, emergencies and civil disasters are in use at the present time. Shortcomings and deficiencies of those considered below are indicated.
Television stations superimpose messages on normal programming or interrupt normal programming to advise their viewers of severe weather conditions. One major deficiency of this warning method is that the region of coverage of the typical local television station (i.e., the region over which the signals transmitted by the local television station are received) is so extensive that the severe weather condition warnings are received in areas within the region of coverage that are not exposed to and will not be affected by the severe weather conditions being reported by the local television station. At best, this is a nuisance to those individuals who hear the alerts but are not, and will not be, affected by the severe weather conditions being reported. Also, this warning method requires that the television receivers be turned on, actively watched, and tuned to a local television station that is broadcasting the severe weather condition warning for the warning to be received and viewed.
Another example of a warning system currently in use many communities to warn residents of emergencies is a controlled siren, commonly referred to as a civil defense or air raid siren. Such systems are susceptible to mechanical breakdowns and must be taken out of service periodically for routine maintenance. Also, such systems are ineffective to give warnings to those located out of range of the sirens.
Yet another example of a warning method currently in use in many communities is police and fire departments patrolling the streets and announcing warnings or emergencies over loudspeakers. This method is ineffective when the warning message from the loudspeaker is not heard by those located out of range of the loudspeaker or the warning message is drowned out by weather noise or interfering noise levels in the residences where the warnings are intended to be received by individuals situated in the residences.
In a special purpose warning system, currently in use by the National Weather Service, continuing weather bulletins are broadcast on a VHF frequency front transmitters of the National Weather Service. Whenever severe weather threatens, an alert is broadcast that triggers an audible alarm in special receivers, such as the weather radio units available from Tandy Corporation. Because the coverage areas of the broadcast stations usually are quite large (i.e., a National Weather Service facility can cover and be responsible for as many as ten to twenty counties), it is possible, as with the broadcasting of severe weather condition warnings by local television stations, to receive alerts on a receiver in an area to which the alerts have no actual significance. Again, at best, this is a nuisance to those individuals who hear the alerts but are not, and will not be, affected by the severe weather conditions being reported. Additionally, when an alert is triggered in such a receiver, it must be muted manually by the user because the system does not have a broadcast "all clear" signal.
U.S. Pat. No. 5,121,430 describes and illustrates a system designed to overcome the shortcomings identified above of the special purpose warning system described above. The system described in U.S. Pat. No. 5,121,430, however, requires extra, specially designed equipment dedicated to the single purpose of receiving and processing the transmitted warning signals.

Geographically specific signal communications receiver

Matsushita Electric Industrial Co., Ltd.


An architecture and method that enables communication between applications and peripheral devices through use of network-type messaging. The architecture is exemplified by a machine having a mainboard that includes memory and one or more processors. The mainboard also includes one or more expansion slots for receiving various peripheral device cards. The processor(s) is enabled to communicate with peripheral devices via an internet network that includes network interfaces for both the processor and each of the peripheral devices. The network interfaces include a network port and a network address that is bound to the network port by means of a network socket. Socket application program interface (API) and network abstraction layers are provided by software means to enable applications to communicate with the peripheral devices using network messaging and protocols, such as TCP/IP over an Ethernet.

1. Field of the Invention
The present invention generally concerns computer architectures, and in more particular concerns an architecture that provides intra-device interfacing via network-like messaging.
2. Background Information
A typical computer includes a main board or motherboard that includes one or more processors and provides various hardware interfaces for connecting peripheral devices to the motherboard. For example, personal computers (PCs) generally include a set of expansion "slots" into which peripheral cards can be inserted to provide certain functions, such as video, network interfacing, modem, auxiliary disk control, etc. Under conventional architectures, communication between the processor and the peripheral cards is enabled through a communications bus, such as the PCI bus or ISA bus. Accordingly, software application programs can communicate with peripheral devices through either direct system calls (e.g., direct writes or reads from memory) or through calls made to an operating system, which then will pass or retrieve the desired data either directly or through a device driver.
There are several problems with the conventional architecture. For example, some multiprocessor computer architectures do not enable peripheral devices to be shared between the processors, in a manner that scales across computers. Other multiprocessor architectures that allow such sharing present bus contention problems that may restrict access to the peripheral devices. Another problem with conventional architectures, such as the PCI bus, is that the bus speeds are insufficient to take advantage of higher-bandwidth communication links (e.g., present Gigabit/sec Ethernet networks and future 10 Gigabit/sec networks.
Another problem is security; configuration information can often be easily changed such by unauthorized users that the resource conflicts or other problems arise. For example, conventional bus architectures do not have any built-in security measures. As a result, unauthorized users may delete or corrupt bus and/or resource configuration information. This problem is exacerbated by today's distributed environment, wherein changes on one machine may adversely effect other machines connected to the network.

Network based intra-system communications architecture


A system for manufacturing ophthalmic devices, in particular contact lenses or intraocular lenses, includes at least one injection molding machine for manufacturing a cup bottom part and cup top part to form a cast mold, a cooling station, an injection assembly arranged for injecting an amount of monomeric material into the cup bottom part, a curing assembly, a first optical inspection assembly for determining at least one first optical cup part parameter, a second optical inspection assembly for determining at least one optical combination parameter of the combination of the cured monomeric material formed into a lens and the cup part that bears the lens, and an electronic control provided with a calculation module for determining at least one optical lens parameter of the lens on the basis of the cup part parameter and the combination parameter. Possibly, production parameters can be adjusted on the basis of trend changes of the lens parameters of produced lenses.

EP-0 686 491 B1 describes a method for manufacturing contact lenses with the aid of cast molding. In the publication it is described that a cast mold is manufactured with the aid of injection molding. The known apparatus is rather complicated and hence costly. While in the known apparatus cast molds provided with a cup bottom part and a cup top part are formed, these parts are not provided with special provisions allowing them to be clamped onto each other. As a result of the lack of such clamping means, during hardening of the monomeric material introduced into the cup bottom part for forming a contact lens, the top part has to be continuously pressed onto the cup bottom part with an external press-on device especially provided for that purpose. This leads to a relatively costly apparatus. Further, a part of the manufacturing process is to take place under vacuum, which also adversely affects the costs of the total system to a considerable extent.

System and method for manufacturing ophthalmic devices


An X2 service transmission method and a network device are disclosed. The method includes if a first IPsec tunnel is unavailable, detecting, by a first base station, whether a second IPsec tunnel between the first base station and a security gateway is available, where the first IPsec tunnel is an IPsec tunnel established between the first base station and a second base station, and the first base station can transmit X2 service data with the second base station through the second IPsec tunnel; and transmitting the X2 service data through the second IPsec tunnel if the second IPsec tunnel is available.

With rapid development of mobile communications technologies, a third generation mobile communications system is already in a Long Term Evolution (LTE) phase. In addition, due to features such as a large amount of telecommunication service data, a complex network structure, and all-Internet Protocol (Internet Protocol)-based LTE, the 3GPP recommends using an Internet Protocol Security (IPsec) technology to enhance protection of data services. IPsec is an open IP layer security framework protocol formulated by the Internet Engineering Task Force (IETF), and is a layer 3 tunneling protocol. IPsec works at a network layer, and can provide security protection for transmission of sensitive data, and protect and authenticate an IP data packet transmitted between devices participating in IPsec. IPsec prevents data from being monitored, tampered, and forged by an attacker during transmission over a public network.
In the prior art, for an LTE wireless backhaul network, a plaintext mechanism is used to transmit communication data of a base station. To be specific, an X2 interface data stream between base stations is very likely to be deciphered, eavesdropped, impersonated, tampered, and the like, and is faced with a great security risk. To reduce the security risk, transmission security of the X2 interface data stream has been protected in the prior art by supporting an X2 interface security tunnel automatically established between the base stations. However, when an X2 service needs to be transmitted between base stations, an automatically established direct IPsec tunnel is unavailable. Therefore, a data packet corresponding to the X2 service can only be discarded, and consequently transmission of the X2 service cannot be completed. Alternatively, even if there may be another preset standby direct IPsec tunnel used with the direct IPsec tunnel for redundancy purposes, it is likely that no effective redundancy can be achieved even if there are many standby direct IPsec tunnels because a physical link between the base stations is unavailable or fails. As a result, communication efficiency is low, affecting user experience.

X2 service transmission method and network device


A system and method for the vacuum assisted insertion of optical fibers includes a plate with one or more fiber alignment holes and a vacuum-sealed region on the exit end of the alignment holes. A vacuum source is connected to the vacuum-sealed region and creates a partial vacuum which draws air through the alignment holes creating an airstream into the alignment hole. As a fiber is moved toward the alignment hole, the airstream converging on the hole creates a centering force which acts to pull the fiber into alignment with the hole and the fiber passes directly into the hole. The use of a vacuum produces a precise alignment of a fiber or fibers that can be automated and is significantly quicker and more efficient than any other existing apparatus.

The present invention relates generally to optical fibers. More specifically, the present invention pertains to methods of positioning and aligning optical fibers within a fiber optic system. The present invention is particularly, though not exclusively, useful for quickly and accurately inserting optical fibers into fiber ferrules and other fiber alignment devices.
Over the past several decades, the use of optical fibers, or fiber optics, to transmit information on a light beam have become increasingly popular. In fact, much of the information which is transmitted today within the telecommunications industry is done over optical fibers.
A typical single mode (SM) optical fiber has a diameter of approximately 125 microns (125 xcexcm) and is formed with a glass core with a diameter of about ten microns (10 xcexcm). As a result, these optical fibers are rather flexible, yet must be positioned to a very high degree of precision.
As a result of the widespread use of optical fibers, and the fact that the typical optical fibers are very small and flexible, the handling, positioning and termination of these fibers represents a significant challenge to manufacturers of high quality fiber-optic products. Moreover, because some optical equipment incorporates assemblies having many optical fibers that must all be positioned to within a few microns, or inserted into fiber receptacles, or ferrules, this challenge often represents a significant manufacturing problem. The positioning of optical fibers is even more difficult when attempting to position the fibers in blind holes, or when attempting to automate the manufacturing process.
The use of a vacuum to facilitate the insertion of optical fibers greatly simplifies the automated assembly process. In fact, the mechanical alignment tolerances typically experienced in fiber optic manufacturing may be reduced to hundreds of microns, so insertion of fibers into blind holes, typically a most challenging assembly using current approaches, may be easily automated. If conventional ferrules are used, a nozzle end or indent is typically used to guide the fiber. This invention eliminates the need for these nozzles or indented portions, and is even applicable to flat entrance holes.
In a typical application, an optical fiber is positioned for insertion into a hole within about 0.2 mm to 0.3 mm, and held about 50 mm from the end of the fiber. As the fiber is advanced toward the hole, the airstream converging into the hole acts to pull the fiber into alignment with the hole. Consequently, the fiber can be brought near the hole very rapidly, and because the fiber is flexible, the fiber will always go directly into the hole. Experiments have been conducted under microscope observation, and the principle has been repeatedly tested and the sequence observed in each assembly process.
In an application where a partial vacuum may be applied to an alignment plate having a number of alignment holes, a fiber clamp having multiple optical fibers may be positioned such that all of the optical fibers in the clamp may be inserted into the alignment plate simultaneously. As a result, large scale assembly of such delicate and flexible optical fibers, while maintaining a very high level of precision, may be achieved and represents a significant advantage over the current state of the art.

System and method for the vacuum assisted insertion of optical fibers


A printing apparatus remote monitoring system includes a center system that remotely monitors a plurality of printing apparatuses, and a plurality of monitoring mediation apparatuses that mediate communications between the plurality of printing apparatuses and the center system. The center system includes a bug countermeasure policy storage device that stores software bug information created in each of the printing apparatuses, linking it with a bug countermeasure policy. The software bug information includes a type of the printing apparatus, a version of firmware implemented in the printing apparatus, and abnormal information occurring during running of the firmware in the printing apparatus.

1. Field of the Invention
The present invention relates to a remote printing apparatus monitoring system, and in particular, to the remote printing apparatus monitoring system suitable for monitoring printing apparatuses that operate in accordance with firmware.
2. Discussion of the Background Art
A conventional remote monitoring system for monitoring image printing apparatuses includes a mediation apparatus between the image printing apparatus and a remote monitoring center. The mediation apparatus collects counter log of a number of sheets printed in the image printing apparatus as a monitoring objective as well as condition information by means of protocol, such as HTTPS/SOAP, MIB, etc. (HTTPS=HyperTextTransferProtocolover SSL, SOAP=Simple Object Access Protocol, MIB=Management Information Base)
Otherwise, the mediation apparatus receives a report from the image printing apparatus and notifies the center of the report when the printing apparatus causes abnormality, thereby controlling the printing apparatus monitoring system.
In such a conventional system, however, a sensor can easily detect almost all of the reports, such as malfunction of parts the printing apparatus is caused by potential software bug, etc.
Further, when abnormality caused in, such a cause is summarized as software error and is reported. Thus, the abnormality sometimes is neglected until a serious problem.
Further, debug log need to be collected to analyze an abnormal condition of the printing apparatus. Such debug log is temporarily stored in storage and quickly disappears after a prescribed time period from the storage. Since debug log is voluminous and becomes significant if the entire debug log is continuously collected. In addition, debug log outputted to the storage is insufficient for analysis depending on a problem.
Then, a note type PC (personal computer) or similar devices including a log collection use tool is disposed, upon a contract, in a customer site that possibly causes a problem.
The note type PC continuously picks up and stores log in a HDD (Hard Disk Drive), and is collected after a while. Otherwise, log output use firmware is temporarily installed in the customer site to pick up log.
Further, when firmware capable of resolving a problem is released, a customer suffering the problem cannot recognize such a release. Thus, the customer that needs update of the firmware can be neglected for a longtime.

Remote monitoring system for quickly dealing with a bug


Recombinant forms of isolated and purified delta opioid receptors and methods to screen for compounds interactive with delta opioid receptors are described.

The term "opioid" generically refers to all drugs, natural and synthetic, that have morphine-like actions. Formerly, the term "opiate" was used to designate drugs derived from opium, e.g., morphine, codeine, and many semi-synthetic congeners of morphine. After the isolation of peptide compounds with morphine-like actions, the term opioid was introduced to refer generically to all drugs with morphine-like actions. Included among opioids are various peptides that exhibit morphine-like activity, such as endorphins, enkephalins and dynorphins. However, some sources have continued to use the term "opiate" in a generic sense, and in such contexts, opiate and opioid are interchangeable. Additionally, the term opioid has been used to refer to antagonists of morphine-like drugs as well as to characterize receptors or binding sites that combine with such agents.
Opioids are generally employed as analgesics, but they may have many other pharmacological effects as well. Morphine and related opioids produce their major effects on the central nervous and digestive systems. The effects are diverse, including analgesia, drowsiness, mood changes, respiratory depression, dizziness, mental clouding, dysphoria, pruritus, increased pressure in the biliary tract, decreased gastrointestinal motility, nausea, vomiting, and alterations of the endocrine and autonomic nervous systems.
A significant feature of the analgesia produced by opioids is that it occurs without loss of consciousness. When therapeutic doses of morphine are given to patients with pain, they report that the pain is less intense, less discomforting, or entirely gone. In addition to experiencing relief of distress, some patients experience euphoria. However, when morphine in a selected pain-relieving dose is given to a pain-free individual, the experience is not always pleasant; nausea is common, and vomiting may also occur. Drowsiness, inability to concentrate, difficulty in mentation, apathy, lessened physical activity, reduced visual acuity, and lethargy may ensue.
The development of tolerance and physical dependence with repeated use is a characteristic feature of all opioid drugs, and the possibility of developing psychological dependence on the effect of these drugs is a major limitation for their clinical use. There is evidence that phosphorylation may be associated with tolerance in selected cell populations (Louie, A. et al. Biochem Biophys Res Comm (1988) 152:1369-7.5).
Acute opioid poisoning may result from clinical overdosage, accidental overdosage, or attempted suicide. In a clinical setting, the triad of coma, pinpoint pupils, and depressed respiration suggest opioid poisoning. Mixed poisonings including agents such as barbiturates or alcohol may also contribute to the clinical picture of acute opioid poisoning. In any scenario of opioid poisoning, treatment must be administered promptly.
The opioids interact with what appear to be several closely related receptors. Various inferences have been drawn from data that have attempted to correlate pharmacologic effects with the interactions of opioids with a particular constellation of opioid receptors (Goodman and Gilman's, THE PHARMACOLOGICAL BASIS OF THERAPEUTICS, 7th ed, pp. 493-95 (MacMillan 1985)). For example, analgesia has been associated with mu and kappa receptors. Delta receptors are believed to be involved in alterations of affective behavior, based primarily on the localization of these receptors in limbic regions of the brain. Additionally, activation, e.g., ligand binding with stimulation of further receptor-mediated responses, of delta opioid receptors is believed to inhibit the release of other neurotransmitters. The pathways containing relatively high populations of delta opioid receptor are similar to the pathways implicated to be involved in Huntington's disease. Accordingly, it is postulated that Huntington's disease may correlate with some effect on delta opioid receptors.
Two distinct classes of opioid molecules can bind opioid receptors: the opioid peptides (e.g., the enkephalins, dynorphins, and endorphins) and the alkaloid opiates (e.g., morphine, etorphine, diprenorphine and naloxone). Subsequent to the initial demonstration of opiate binding sites (Pert, C. B. and Snyder, S. H., Science (1973) 179:1011-1014), the differential pharmacological and physiological effects of both opioid peptide analogues and alkaloid opiates served to delineate multiple opioid receptors. Accordingly, three anatomically and pharmacologically distinct opioid receptor types have been described: delta, kappa and mu. Furthermore, each type is believed to have sub-types (Wollemann, M., J Neurochem (1990) 54:1095-1101; Lord, J. A., et al., Nature (1977) 267:495-499).
All three of these opioid receptor types appear share the same functional mechanisms at a cellular level. For example, the opioid receptors cause inhibition of adenylate cyclase, and inhibition of neurotransmitter release via both potassium channel activation and inhibition of Ca2+ channels (Evans, C. J., In: Biological Basis of Substance Abuse, S. G. Korenman & J. D. Barchas, eds., Oxford University Press (in press); North, A. R., et al., Proc Natl Acad Sci USA (1990) 87:7025-29; Gross, R. A., et al., Proc Natl Acad Sci USA (1990) 87:7025-29; Sharma, S. K., et al., Proc Natl Acad Sci USA (1975) 72:3092-96). Although the functional mechanisms are the same, the behavioral manifestations of receptor-selective drugs differ greatly (Gilbert, P. E. & Martin, W. R., J Pharmacol Exp Ther (1976) 198:66-82). Such differences may be attributable in part to the anatomical location of the different receptors.
Delta receptors have a more discrete distribution within the mammalian CNS than either mu or kappa receptors, with high concentrations in the amygdaloid complex, striatum, substantia nigra, olfactory bulb, olfactory tubercles, hippocampal formation, and the cerebral cortex (Mansour, A., et al., Trends in Neurosci (1988) 11:308-14). The rat cerebellum is remarkably devoid of opioid receptors including delta opioid receptors.
Several opioid molecules are known to selectively or preferentially bind delta receptors. Of the vertebrate endogenous opioids, the enkephalins, particularly met-enkephalin (SEQ ID NO: 1) and leu-enkephalin (SEQ ID NO: 2), appear to possess the highest affinity for delta receptors, although the enkephalins also have high affinity for mu receptors. Additionally, the deltorphans, peptides isolated from frog skin, comprise a family of opioid peptides that have high affinity and selectivity for delta receptors (Erspamer, V., et al., Proc Natl Acad Sci USA (1989) 86:5188-92).
A number of synthetic enkephalin analogues are also delta receptor-selective including (D-Ser2) leucine enkephalin Thr (DSLET) (SEQ ID NO: 3) (Garcel, G. et al. FEBS Lett (1980) 118:245-247) and (D-Pen2, D-Pen5) enkephalin (DPDPE) (SEQ ID NO: 4) (Akiyama, K. et al., Proc Natl Acad Sci USA (1985) 82:2543-2547).
Recently a number of other selective delta receptor ligands have been synthesized, and their bioactivities and binding characteristics suggest the existence of more than one delta receptor subtype (Takemori, A. E., et al., Ann Rev Pharm Toxicol, (1992) 32:239-69; Negri, L., et al., Eur J Pharmacol (1991) 196:355-335; Sofuoglu, M., et al., Pharmacologist (1990) 32:151).
Although the synthetic pentapeptide 2dAla, 5dLeu enkephalin (DADLE) was considered to be delta-selective, it also binds equally well to mu receptors. The synthetic peptide D-Alka2-N-MePhe4-Gly-ol5-enkephalin (DAGO) (SEQ ID NO: 6) has been found to be a selective ligand for mu-receptors.
The existence of multiple delta opioid receptors has been implied not only from the pharmacological studies addressed above, but also from molecular weight estimates obtained by use of irreversible affinity ligands. Molecular weights for the delta opioid receptor that range from 30 kDa to 60 kda (Evans, C. J., supra; Evans, C. J. et al., Science (1992) 258:1952-1955, which document corresponds to the disclosure of the priority document of the present application; Bochet, P. et al., Mol Pharmacol (1988) 34:436-43). The various receptor sizes may represent alternative splice products, although this has not been established.
Many studies of the delta opioid receptor have been performed with the neuroblastoma/glioma cell line NG108-15, which was generated by fusion of the rat glial cell line (C6BU-1) and the mouse neuroblastoma cell line (N18-TG2) (Klee, W. A. and Nirenberg, M. A., Proc Natl Acad Sci USA (1974) 71:3474-3477). The rat glial cell line expresses essentially no delta opioid receptors, whereas the mouse neuroblastoma cell line expresses low amounts of the receptor. Thus, it has been suggested that the delta receptor in the NG108-15 cells is of mouse chromosomal origin (Law, Mol Pharm (1982) 21:438-91). Each NG108-15 cell is estimated to express approximately 300,000 delta-receptors. Only delta-type opioid receptors are expressed, although it is not known whether these represent more than a single subtype. Thus, the NG108-15 cell line has served to provide considerable insight into the binding characterization of opioid receptors, particularly delta opioid receptors. However, the NG108-15 cell line is a cancer-hybrid and may not be completely representative of the delta receptor in endogenous neurons due to the unique cellular environment in the hybrid cells.
An extensive literature has argued that the opioid receptors are coupled to G-proteins (see, e.g., Schofield, P. R., et al., EMBO J (1989) 8:489-95), and are thus members of the family of G-protein coupled receptors. G-proteins are guanine nucleotide binding proteins that couple the extracellular signals received by cell surface receptors to various intracellular second messenger systems. Identified members of the G-protein-coupled family share a number of structural features, the most highly conserved being seven apparent membrane-spanning regions, which are highly homologous among the members of this family (Strosberg, A. D., Eur J Biochem (1991) 196:1-10). Evidence that the opioid receptors are members of this family includes the stimulation of GTPase activity by opioids, the observation that GTP analogues dramatically effect opioid and opiate agonist binding, and the observation that pertussis toxin (which by ADP ribosylation selectively inactivates both the Gi and Go subfamilies of G-proteins) blocks opioid receptor coupling to adenylate cyclase and to K+ and Ca2+ channels (Evans, C. J., supra).
The members of the G-protein-coupled receptor family exhibit a range of characteristics. Many of the G-protein-coupled receptors, e.g., the somatostatin receptor and the angiotensin receptor, have a single exon that encodes the entire protein coding region (Strosberg supra; Langord, K., et al., Biochem Biophys Res Comm (1992) 138:1025-1032). However, other receptors, such as substance P receptor and the dopamine D-2 receptor, contain the protein coding region. The D-2 receptor is particularly interesting in that alternate splicing of the gene gives rise to different transcribed products (i.e., receptors) (Evans, C. J., supra; Strosberg, supra). Interestingly, somatostatin ligands are reported to bind to opioid receptors (Terenius, L., Eur J Pharmacol (1976) 38:211; Mulder, A. H., et al., Eur J Pharmacol (1991) 205:1-6) and, furthermore, to have similar molecular mechanisms (Tsunoo, A., et al., Proc Natl Acad Sci USA (1986) 83:9832-9836).
In previous efforts to describe and purify opioid receptors, two clones have been described that were hypothesized either to encode a portion of or entire opioid receptors. The first clone, which encodes the opiate binding protein OBCAM (Schofield et al., supra), was obtained by utilizing a probe designed from an amino acid sequence of a protein purified on a morphine affinity column. OBCAM lacks any membrane spanning domains but does have a C-terminal domain that is characteristic of attachment of the protein to the membrane by a phosphatidylinositol (PI) linkage. This feature, which is shared by members of the immunoglobulin superfamily, is not common to the family of receptors coupled to G-proteins. Thus, it has been proposed that OBCAM is part of a receptor complex along with other components that are coupled to G-proteins (Schofield et al., supra). At present, however, there is no direct evidence for such a complex.
A second proposed opioid receptor clone was obtained in an effort to clone a receptor that binds kappa opioid receptor ligands (Xie, G. X., Proc Natl Acad Sci USA (1992) 89:4124-4128). A DNA molecule encoding a G-coupled receptor from a placental cDNA library was isolated. This receptor has an extremely high homology with the neurokinin B receptor (84% identical throughout the proposed protein sequence). When this clone was expressed in COS cells, it displayed opioid peptide displaceable binding of 3H-bremazocine (an opiate ligand with high affinity for kappa receptors). However, the low affinity of this receptor for 3H-bremazocine, and the lack of appropriate selectivity since this receptor (binding both mu and delta ligands) made it doubtful that this cloned molecule is actually an opioid receptor.
Furthermore, characterization of opioid receptor proteins has proven difficult because of their instability once solubilized from the membrane; purified delta opioid receptors have not been isolated. The previous estimates of opioid receptor molecular weights ranging from 30 kDa to 60 Kda further reflect the difficulty in isolating and characterizing these proteins.
Recently, DNA encoding the murine kappa and delta opioid receptors from mouse brain was reported by Yasuda, K. et al. Proc Natl Acad Sci USA (1993) 90:6736-6740. The sequence of the clones indicated the presence of the expected seven transmembrane regions. In addition, Chen, Y. et al. in a soon-to-be-published manuscript in Molecular Pharmacology (1993) report the "molecular cloning and functional expression of a mu opioid receptor from rat brain". In fact, the rat mu receptor was cloned using the present inventors' DOR-1 clone, which lends enabling support to the present invention disclosed below. The mouse delta opioid receptor was disclosed as having been cloned (Kieffer, B. J. et al., Proc Natl Acad Sci USA (1992) 89:12048-12052 (December issue) after the filing date of the priority document of the present application. However, the sequence reported therein differs from the sequence reported by the present inventors for the mouse delta receptor (Evans et al., 1992, supra; this disclosure).
In addition to the opioid receptors which respond to specified agonists, the delta, kappa and mu opioid receptors, additional forms of these proteins, commonly called opioid receptor-like (ORL) proteins have been obtained using the methods described herein. Using these methods, two human ORL protein-encoding cDNAs were obtained from a human brain stem cDNA library. One of these clones is equivalent to that isolated by O'Dowd, B. F. et al. Gene (1993) 136:355-360; the other, ORL-1, is identical to that reported by Mollereau, C. et al. FEBS Lett (1994) 341:33-38. A preliminary report of the present work appeared in Regulatory Peptides (1994) 54:143-144 and is incorporated herein by reference.

DNA molecules encoding opioid receptors and methods of use thereof

The Regents of the University of California


An analog variable phase shifter comprises a phase shift circuit and associated active inlet and outlet matching circuits. The phase shift circuit includes a transistor with negative feedback, and the inlet and outlet matching circuits are of the type used for matching a wideband microwave signal amplifier over the entire range of frequency variation in the microwave signals applied to the amplifier.

Such phase shifters may be used, in particular, in array type antennas which include components for adjusting the beam emitted or received by said antennas, the components themselves comprising sets of unit modules spaced apart at an array pitch for adjusting the phases and the amplitudes of the microwave signals they receive.
In space applications, and more particularly for space equipment using miniaturized versions of array type antennas that are of the so-called "active antenna" type, it is necessary to obtain as great a degree of miniaturization as possible in said unit modules, and in particular in their unit circuits for phase adjustment, while retaining adjustment accuracy that is as fine as possible over as large as possible a range of phase shifts.
Other criteria required by this type of application consist in reducing the power consumption of the unit circuits as much as possible and in matching their impedances as closely as possible so as to make it possible to interconnect them directly in cascade with other circuits without using intermediate isolating circuits.
Existing phase shifters for microwave signals can be classified into two categories:
analog phase shifters capable of providing continuous variation in phase shift by acting on a control voltage; and
digital phase shifters capable of providing stepwise variation of phase shift through steps of fixed predetermined value.
Digital phase shifters can readily be made using monolithic integrated technology, and thus satisfy the above-mentioned miniaturization requirement, but as mentioned above they do not provide sufficiently fine adjustment of phase shift.
Analog phase shifters can themselves be classified into a plurality of categories:
"vector modulation" phase shifters based on the principle of splitting the input signal into four equal fourths at mutual 90.degree. phase shifts, thereby creating four same-amplitude orthogonal vectors. Thereafter, each of these vectors is attenuated by a variable attenuator and then the four signals obtained in this way are recombined and the resulting output signal is at a given phase shift relative to the input signal, which shift thus depends on the values of the four attenuations applied to the signal. The drawbacks of this solution lie in the complexity of the circuit (requiring three dividers, four attenuators, and three combiners), in the lack of accuracy in the final phase shift, and above all in the DC power consumption of the circuit being far from being negligible which makes it quite unsuitable for space applications;
"reflection" phase shifters based on the principle of splitting the input signal over the direct and coupled paths of a 3 dB hybrid coupler (of the Lange's coupler type). Identical L-C cells (made up of inductors and variable capacitance capacitors constituted by varactor diodes) are placed on said paths and they reflect the signals which recombine at the outlet with a certain phase shift. The main drawback of this topology lies in the large area occupied by the circuit which makes it rather difficult to integrate into monolithic technology; and
phase shifters based on varying the angle of the transmission coefficient of a transistor having negative feedback provided by means of a variable reactance.
A phase shifter of that type is described in the document: 18th European Microwave Conference--Stockholm 1988 "A novel microwave transmission phase shifter" by J. P. Coupez and R. A. Perichon. The variable reactance is formed by connecting in series an inductance and a variable capacitance capacitor constituted by a varactor diode to make a monolithic integrated circuit implementation possible. However, that phase shifter does not include associated inlet and outlet matching circuits which means that its performance in practice is quite mediocre.
FIG. 1 is a Smith chart showing various values for the inlet reflection coefficient S11 and the outlet reflection coefficient S22 of such a phase shifter without inlet and outlet matching circuits. These various values are obtained over a set of control voltage values for the varactor diodes constituting the variable capacitance capacitors (five values in this case), and at each of these values, frequency is also varied over a certain range giving rise to a set of curved arcs in FIG. 1 which show the way in which said reflection coefficients vary.
An object of the present invention is to provide such inlet and outlet matching circuits that are effective over the entire range of reactance variation in the negative feedback of the transistor for a given range of operating frequencies.

Analog variable phase shifter with active matching circuits


A method of automatically applying a hypothesis test to a data set. The method reduces errors made in failing to appreciate predicate assumptions of various statistical tests, and elicits a series of indications from the user regarding characteristics of interest embodied by the data set to select an appropriate statistical test. The system also reduces errors in constructing competing null and alternative hypothesis statements by generating a characterization of the data and defining null and alternative hypotheses according to the indications, selected statistical test, and conventions adopted with respect to the tests. The system also establishes a significance level, calculates the test statistic, and generates an output. The output of the system provides a plain interpretation of the quantitative results in the terms indicated by the user to reduce errors in interpretation of the conclusion.

Statistical tests provide a mechanism for making quantitative conclusions about characteristics or behavior of a process as represented by a sample of data drawn from the process. Statistical tests also are used to compare characteristics or behaviors of two or more processes based on respective data sets or samples drawn from the processes.
The term "hypothesis testing" describes a broad topic within the field of statistical analysis. Hypothesis testing entails particular methodologies using statistical tests to calculate the likely validity of a claim made about a population under study based on observed data. The claim, or theory, to which the statistical testing is applied is called a "hypothesis" or "hypothesis statement", and the data set or sample under study usually represents a sampling of data reflecting an input to, or output of, a process. A well-constructed hypothesis statement specifies a certain characteristic or parameter of the process. Typical process characteristics used in hypothesis testing include statistically meaningful parameters such as the average or mean output of a process (sometimes also referred to as the "location" of the process) and/or the dispersion/spread or variance of the process.
When constructing a hypothesis test, a hypothesis statement is defined to describe a process condition of interest that, for the purpose of the test, is alleged to be true. This initial statement is referred to as the "null hypothesis" and is often denoted algebraically by the symbol H0. Typically the null hypothesis is a logical statement describing the putative condition of a process in terms of a statistically meaningful parameter. For example, consider an example of hypothesis testing as applied to the discharge/output of a wastewater treatment process. Assume there are concerns that the process recently has changed such that the output is averaging a higher level of contaminants than the historical (and acceptable) output of 5 parts of contaminant per million (ppm). A null hypothesis based on this data could be stated as follows: the level of contaminants in the output of the process has a mean value equal to or greater than 5 ppm. The null hypothesis is stated in terms of a meaningful statistical parameter, i.e., process mean, and in terms of the process of interest, i.e., the level of contaminants in the process output.
Likewise, hypothesis testing also entails constructing an alternative hypothesis statement regarding the process behavior or condition. For the purpose of the test, the status of the alternative hypothesis statement is presumed to be uncertain, and is denoted by the symbol H1. An alternative hypothesis statement defines an uncertain condition or result in terms of the same statistical parameter as the null hypothesis, e.g., process mean, in the case of the wastewater treatment example. In that example, an alternative hypothesis statement would be defined along the following lines: the level of contaminants in the output of the process has a mean value of less than 5 ppm. In constructing null and alternative hypotheses, it is imperative that the statements be stated in terms that are mutually exclusive and exhaustive, i.e., such that there is neither overlap in possible results nor an unaccounted for or "lurking" hypothesis.
One object in applying hypothesis testing is to see if there is sufficient statistical evidence (data) to reject a presumed null hypothesis H0 in favor of an alternative hypothesis H1. Such a rejection would be appropriate under circumstances wherein the null hypothesis statement is inconsistent with the characteristics of the sampled data. In the alternative, in the event the data are not inconsistent with the statement made by the null hypothesis, then the test result is a failure to reject the null hypothesis—meaning the data sampling and testing does not provide a reason to believe any statement other than the null hypothesis. In short, application of a hypothesis test results in a statistical decision based on sampled data, and results either in a rejection of the null hypothesis H0, which leaves a conclusion in favor of the alternative H1, or a failure to reject the null hypothesis H0, which leaves a conclusion wherein the null hypothesis cannot be found false based on the sampled data.
Any Hypothesis Test can be conducted by following the four steps outlined below:
Step 1—State the null and alternative hypotheses. This step entails generating a hypothesis of interest that can be tested against an alternative hypothesis. The competing statements must be mutually exclusive and exhaustive.
Step 2—State the decision criteria. This step entails articulating the factors upon which a decision to reject or fail to reject the null hypothesis will be based. Establishing appropriate decision criteria depends on the nature of the null and alternative hypotheses and the underlying data. Typical decision criteria include a choice of a test statistic and significance level (denoted algebraically as "alpha" α) to be applied to the analysis. Many different test statistics can be used in hypothesis testing, including use of a standard or test value associated with the process data, e.g., the process mean or variance, and/or test values associated with the differences between two processes, e.g., differences between proportions/means/medians, ratios of variances and the like. The significance level reflects the degree of confidence desired when drawing conclusions based on the comparison of the test statistic to the reference statistic.
Step 3—Collect data relating to the null hypothesis and calculate the test statistic. At this step, data is collected through sampling and the relevant test statistic is calculated using the sampled data.
Step 4—State a conclusion. At this step, the appropriate test statistic is compared to its corresponding reference statistic (based on the null distribution) which shows how the test statistic would be distributed if the null hypothesis were true. Generally speaking, a conclusion can be properly drawn from the resultant value of the test statistic in one of several different ways: by comparing the test statistic to the predetermined cut-off values, which were established in Step 2; by calculating the so-called "p-value" and comparing it to the predetermine significance level a alpha; or by computing confidence intervals. The p-value is quantitative assessment of the probability of observing a value of the test statistic that is either as extreme as or more extreme than the calculated value of the test statistic, purely by random chance, under the assumption that the null hypothesis is true.


A folding chair comprises a supporting leg with two same or symmetrical sides, a seat cushion and a backrest, wherein the supporting leg comprises a front supporting rod and a back supporting rod which are crossed mutually. The front supporting rod extends outwardly to the upside of the seat cushion to form backrest sections. The seat cushion is mounted on a seat cushion rod. The front part of the seat cushion rod is movably hinged on the upper end of the back supporting rod. The back part of the seat cushion is movably hinged on the middle part of the front supporting rod. The front supporting rod or the back supporting rod is hinged with a sliding sleeve. The back supporting rod or the front supporting rod is penetrated through the sliding sleeve to form a movably crossed structure and a stressed support.

A variety of manners of folding chair are provided. Since the size of the folding chair after being folded is small, the folding chair is convenient to store and carry. The folding chair has become the seating device that is prevalently used in households and workplaces. A common folding chair structure comprises a bilaterally symmetrical support leg, a seat cushion and a backrest, wherein the supporting leg is formed by hinging two front supporting rods and back supporting rods. The seat cushion is mounted on the front and back supporting rods to form a triangle stable supporting structure. The front supporting rod is extended outwardly to the upside of the seat cushion to form backrest sections. Backrests are mounted on two backrest sections. In order to meet the folding function, the front and back supporting rods are movably hinged, and a triangle is formed among the front supporting rod, the back supporting rod and the seat cushion, so that one point must be the moving point. Therefore, the position of the hinge point between the front and back supporting rods is different from the position of one moving point; namely, an abundant folding chair product series are formed and the different requirements are met.
For example, CN201718818U shows a folding chair, wherein the upper end of the back supporting rod is hinged in the upper middle position of the front supporting rod; the middle part of the hard chair seat is pivoted on the part near the middle of the front supporting rod; the back part of the chair seat is movably sleeved on the back supporting rod through a sleeve seat; a limit point is fixed on the back supporting rod; a foldable moving point is formed on the sleeve seat. The structure has the drawbacks that the chair seat is unstable, in particular, when the center of gravity of the haunch moves backwards, wherein the chair seat may swing backwards. Moreover, the front and back supporting rods become front and back parallel structures after being folded and occupy the thickness of two rods.
Another example, CN101396209B shows a folding chair, wherein front and back chair legs are crossed in a shape of X; the front part of the seat plate and the upper end of the back chair leg are hinged; symmetrical sliding chutes are formed on two sides; a supporting rod is fixed between the front chair legs on two sides; the supporting rod is penetrated through the sliding chute; and the functions of supporting the back side of the seat plate and folding by means of the cooperation between the supporting rod and the sliding chute. The folding chair disclosed in this solution is complex in structure and occupies the thickness of at least 2-3 rods after being folded.


A gear attachment structure receives rotation of a handle assembly. The gear attachment structure includes a traverse cam shaft and a driven gear. The traverse cam shaft includes a shaft body, a gear support portion and a gear engaging portion. The gear support portion includes intersecting helical grooves on the outer peripheral surface. The gear support portion is disposed on an end of the shaft body and has a circular cross-section. The gear engaging portion includes a pair of circular-arc portions and a pair of straight portions. The circular-arc portions are opposed to each other while being either disposed along and within the outer periphery of the gear support portion or disposed radial outwards of the gear support portion. One of the straight portions is coupled to one ends of the circular-arc portions whereas the other of the straight portions is coupled to the other ends of the circular-arc portions.

1. Field of the Invention
The present invention relates to a gear attachment structure, particularly to a gear attachment structure used for a reciprocating mechanism of a fishing reel, which is configured to receive rotation of a handle transmitted thereto.
2. Background Art
The fishing reels are normally provided with a reciprocating mechanism for uniformly winding a fishing line onto a spool in conjunction with rotation of a handle. The reciprocating mechanism includes a gear component and a traverse cam shaft. The gear component receives rotation of the handle transmitted thereto. The traverse cam shaft is configured to be rotated by the gear component. In the spinning reels, for instance, an oscillating mechanism functioning as a reciprocating mechanism normally includes a driven gear (an example of a gear component) and a traverse cam shaft. The driven gear is meshed with a pinion gear while being coupled to the traverse cam shaft in a unitarily rotatable state. For example, the reciprocating mechanism structure is described in the specification of Japan Patent No. 3455629. In the dual-bearing reels, on the other hand, a level winding mechanism functioning as a reciprocating mechanism normally includes a driven gear and a traverse cam shaft. The driven gear is meshed with a main gear while being coupled to the traverse cam shaft in a unitarily rotatable state.


An assembly for opening and closing a passageway into the body of a motor vehicle includes a post secured to the body at a lateral side of the passageway, an endgate for opening and closing the passageway, and a hinge secured to the endgate and the post. The hinge defines a lateral axis and supports the endgate for pivoting about the lateral axis relative to the post, and the hinge defines an upright axis and supports the endgate for pivoting about the upright axis relative to the post.

This invention relates generally to an endgate for a motor vehicle, and, more particularly, to an endgate and hinge assembly that allows the endgate to swing alternately about a lateral axis and an upright axis.
The tailgate at the back of a wagon, truck, or station wagon is usually hinged along a lateral axis at the bottom of the tailgate to pivot downward for convenience in loading or unloading cargo. A door at the back of a vehicle hinged along a lateral axis at the top of the door to open upward is often referred to as a hatch or lift gate.
In certain cases it is helpful and preferred that the vehicle has an endgate that can swing like a door about a vertical axis to facilitate access to the cargo area.
A more recent need exists in the automotive industry for a hinge assembly that supports an endgate such that the gate can swing both upward and downward about a horizontal axis and like a door about a vertical axis at the option of the user. It is preferable for such hinges to be substantially identical, easily installed, occupy a small space and available at low cost.

Motor vehicle endgate hinge having dual pivot axes


The present invention provides a method by which the connectivity status of network connections on a PC is determined in real-time by passively reviewing packet information from the TCP/IP stack. To achieve high accuracy of the connectivity status determination, the method involves the determination of the edge of a local network. In cases where little or no network traffic is observed on the network, scalable active probing methods are designed to make accurate connectivity determination. Special considerations for network setups like networks with web proxy servers, NAT or edge firewalls are also included to improve the accuracy of the determination in those environments.

Today's network services are unable to report realtime health assessment of the Internet to the users that are meaningful to their daily tasks like web browsing, conferencing, etc. Moreover, when the Internet connectivity is broken, neither could they notify the users the disruption of internet connectivity in a timely manner nor could they provide useful diagnostics information to the users as to where the problem might be, whether it is with their local ISP network or the Internet backbone. In addition, because of this lack of support for determining the Internet connectivity, applications that rely on this information to be available readily and reliably often have to seek out other ad-hoc and un-reliable methods such as ping certain sites. Due to intrusive nature of those methods, it is prohibitively expensive in term of generated network traffic to deploy them in a large scale.